WorldWideScience

Sample records for boron silicides

  1. Effect of copper on phase formation process in boron-silicide layers on niobium and tantalum

    International Nuclear Information System (INIS)

    The influence of copper additions on regularities of growth, phase- and structure formation of borosilicide coatings produced by siliconizing preliminarily borated niobium and tantalum was studied. Rolled sheets of niobium and tantalum with impurity content less than 0.02 % (mass) were used for the coating application. Copper introduction into saturating medium affects growth rate, phase- and structure formation of silicide phases on niobium and tantalum. It also permits obtaining alternating boride and silicide layers, which is probably the only way of the composition fabrication, which can be of interest, when developing coatings with preset properties

  2. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  3. Optical properties of beta-iron silicide, ruthenium silicide and osmium silicide: Semiconducting transition metal silicides

    Science.gov (United States)

    Birdwell, Anthony Glen

    2001-09-01

    Various optical techniques were used to study the semiconducting transition metal silicides of β- FeSi2, Ru2Si3, and OsSi2. The Raman spectra of ion beam synthesized (IBS) β-FeSi 2 were shown to provide evidence of a net tensile stress in these IBS materials. Possible origins of the observed stress were suggested and a simple model was proposed in order to calculate a value of the observed stress. A correlation between the tensile stress, the nature of the band gap, and the resulting light emitting properties of IBS β-FeSi2 was suggested. The photoreflectance (PR) spectra of IBS β- FeSi2 reveals a direct gap at 0.815 eV and were shown to agree with the band gap value obtained by photoluminescence (PL) once the adjustments for the temperature difference and trap related recombination effects were made. This provides very convincing evidence for intrinsic light emission from IBS β- FeSi2. Furthermore, a model was developed that helps to clarify the variety of inconsistent results obtained by optical absorption measurements. When the results of PL and PR were inserted into this model, a good agreement was obtained with our measured optical absorption results. We also obtained PR spectra of β-FeSi 2 thin films grown by molecular beam epitaxy. These spectra reveal the multiple direct transitions near the fundamental absorption edge of β-FeSi 2 that were predicted by theory. We suggest an order of these critical point transitions following the trends reported in the theoretical investigations. Doping these β-FeSi2 thin films with small amounts of chromium was shown to have a measurable effect on the interband optical spectra. We also report on the effects of alloying β- FeSi2 with cobalt. A decrease in the critical point transitions nearest the fundamental absorption edge was observed as the cobalt concentration increased. Finally, Raman spectroscopy was used to study the vibrational properties of β-FeSi2. The measured Raman spectra agreed very well with the

  4. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    NARCIS (Netherlands)

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surfa

  5. On Silicides in High Temperature Titanium Alloys

    Directory of Open Access Journals (Sweden)

    C. Ramachandra

    1986-04-01

    Full Text Available High temperature titanium alloys like IMI 685 contain small amounts of silicon (~ 0.25 wt. per cent to improve creep resistance. Different types of silicides, namely Ti5Si3 (TiZr5Si3(S1 and (TiZr6 Si3 (S2, have been observed to precipitate in various silicon-bearing titanium alloys depending upon their composition and heat treatment. The precipitation of silicides, their orientation relationship with the matrix in different alloys, and the beneficial influence of thermo-mechanical treatment on the distribution of silicides have been pointed out. The effect of silicides on mechanical properties and fracture of the commercial alloy IMI 685 is also indicated.

  6. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

    Science.gov (United States)

    Bowman, M.G.; Krikorian, N.H.

    1961-10-01

    A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

  7. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, G. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom)]. E-mail: g.srinivasan@ee.qub.ac.uk; Bain, M.F. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Bhattacharyya, S. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Baine, P. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Armstrong, B.M. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Gamble, H.S. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); McNeill, D.W. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom)

    2004-12-15

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si{sub 1-} {sub x} Ge {sub x} , with 0 {<=}x {<=} 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi{sub 2} and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance {rho} {sub c} values 3 x 10{sup -7} ohm cm{sup 2} and 6 x 10{sup -7} ohm cm{sup 2} obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in {rho} {sub c} for both dopant types. The boron doped SiGe exhibits a reduction in {rho} {sub c} from 3 x 10{sup -7} to 5 x 10{sup -8} ohm cm{sup 2} as Ge fraction is increased from 0 to 0.3. The reduction in {rho} {sub c} has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of {rho} {sub c} to Ge fraction with a lowest value in this work of 3 x 10{sup -7} ohm cm{sup 2} for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone.

  8. New silicides for new niobium protective coatings

    International Nuclear Information System (INIS)

    Efforts to improve at high temperature the oxidation resistance of pure niobium or commercial niobium alloys have led to the development of a pack cementation process for the co-deposition of Si, Ti, Cr and Fe. Owing to the knowledge of the quaternary Nb(Ti)-T-Cr-Si phase diagrams (T=Fe or Co or Ni) and of the crystallographic features of phases present in the silicide coatings, new protective coatings have been applied on pure niobium and Cb752 alloy. The results of the crystallographic study of three new silicides isostructural with Nb3Fe3CrSi6, in which Nb is substituted by Ti and Fe by Co or Ni are reported. The oxidation performances of two new coatings mainly consisting of such a silicide are also outlined. (orig.)

  9. On Silicides in High Temperature Titanium Alloys

    OpenAIRE

    Ramachandra, C.; Vakil Singh; P. Rama Rao

    1986-01-01

    High temperature titanium alloys like IMI 685 contain small amounts of silicon (~ 0.25 wt. per cent) to improve creep resistance. Different types of silicides, namely Ti5Si3 (TiZr)5Si3(S1) and (TiZr)6 Si3 (S2), have been observed to precipitate in various silicon-bearing titanium alloys depending upon their composition and heat treatment. The precipitation of silicides, their orientation relationship with the matrix in different alloys, and the beneficial influence of thermo-mechanical treatm...

  10. Synthesis and design of silicide intermetallic materials

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P. [Los Alamos National Lab., NM (United States)] [and others

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  11. On the kinetics of platinum silicide formation

    NARCIS (Netherlands)

    Faber, Erik J.; Wolters, Rob A.M.; Schmitz, Jurriaan

    2011-01-01

    In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline <100> silicon is investigated via in situ resistance measurements under isothermal (197–275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear r

  12. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    Science.gov (United States)

    Jiang, Jingjing; Wang, Han; Guo, Huaihong; Yang, Teng; Tang, Wen-Shu; Li, Da; Ma, Song; Geng, Dianyu; Liu, Wei; Zhang, Zhidong

    2012-05-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the `core/shell' interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon.

  13. Palladium silicide - a new contact for semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd2Si is discussed. A palladium film 100A thick is deposited at 3000C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

  14. Production of Mo-99 using low-enriched uranium silicide

    International Nuclear Information System (INIS)

    Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAlx alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U3Si2 miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed

  15. Solution synthesis of metal silicide nanoparticles.

    Science.gov (United States)

    McEnaney, Joshua M; Schaak, Raymond E

    2015-02-01

    Transition-metal silicides are part of an important family of intermetallic compounds, but the high-temperature reactions that are generally required to synthesize them preclude the formation of colloidal nanoparticles. Here, we show that palladium, copper, and nickel nanoparticles react with monophenylsilane in trioctylamine and squalane at 375 °C to form colloidal Pd(2)Si, Cu(3)Si, and Ni(2)Si nanoparticles, respectively. These metal silicide nanoparticles were screened as electrocatalysts for the hydrogen evolution reaction, and Pd(2)Si and Ni(2)Si were identified as active catalysts that require overpotentials of -192 and -243 mV, respectively, to produce cathodic current densities of -10 mA cm(-2).

  16. Fusion silicide coatings for tantalum alloys.

    Science.gov (United States)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  17. Silicides and germanides for nano-CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kittl, J.A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)], E-mail: kittlj@imec.be; Opsomer, K.; Torregiani, C.; Demeurisse, C.; Mertens, S.; Brunco, D.P.; Van Dal, M.J.H.; Lauwers, A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2008-12-05

    An overview of silicides and germanides for nano-CMOS applications is presented. The historical evolution describing the migration from the use of Ti silicide to Co silicide to Ni silicide as contacting material is first discussed. These changes in silicide material were mainly motivated by the inability to form the target low resistivity silicide phase in small structures due to low nucleation density. This issue was found first for the low resistivity C54 TiSi{sub 2} at linewidths below 200 nm and later for the low resistivity CoSi{sub 2}, at linewidths below 40 nm. A detailed description of scalability and thermal stability issues for NiSi is then presented. No nucleation issues were found in small structures for NiSi, which grows by diffusion or interface limited kinetics with Ni as main moving species. However, silicidation can be excessive in small structures due to Ni diffusion from surrounding areas, resulting in thicker films than targeted in small devices. This can be controlled by using a silicidation process with two rapid thermal processing steps, the first one to control the amount of Ni reacted and the second one to convert the silicide to the target low resistivity monosilicide phase. One of the main issues for applications of NiSi is its low thermal stability: thin NiSi films agglomerate at relatively low temperatures. The process window and thermal stability of Ni and Pt-based films reacted with Si, Si:Ge and Si:C substrates is reviewed. Addition of Ge is shown to degrade thermal stability while addition of C or Pt improves it. Contact resistivity considerations and implementation of dual band-edge silicides are discussed, as well as promising results for the extension of Ni-based silicides to future nodes. Finally a brief overview of germanides is presented discussing NiGe and PdGe as main candidates.

  18. High temperature protective silicide coatings for titanium-niobium alloys

    International Nuclear Information System (INIS)

    The accomplished investigation of heat resistance of silicide coatings on titanium - (30-50)% niobium alloys has revealed that the coatings ensure reliable corrosion protection up to 1100 deg due to formation of heat resistant disilicides and a silicon dioxide layer on alloy surface. Silicide coatings possess particular ductility

  19. Thermal Stability of Magnesium Silicide/Nickel Contacts

    Science.gov (United States)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-10-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  20. The growth and applications of silicides for nanoscale devices.

    Science.gov (United States)

    Lin, Yung-Chen; Chen, Yu; Huang, Yu

    2012-03-01

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction.

  1. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications

    Science.gov (United States)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  2. Infrared spectra of semiconducting silicides nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Baleva, M; Atanassov, A [Faculty of Physics, St. Kl. Ohridski University of Sofia, 5 J. Bourchier Blvd., 1164 Sofia (Bulgaria); Marinova, M [Solid State Physics Section, Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)], E-mail: baleva@phys.uni-sofia.bg

    2008-05-01

    The infrared absorption is studied of samples consisting of a Si matrix with unburied nanolayers of the semiconducting silicides {beta}-FeSi{sub 2} and Mg{sub 2}Si. Features additional to those due to the transversal optical phonons of the compounds are observed. The features are interpreted in the framework of the appearance of surface and interface phonon polaritons, which absorb the light. Insofar as the frequencies of the longitudinal optical (LO) phonon-polariton modes are close to those of the LO phonon frequencies, the infrared transmittance of nanolayers can be regarded as a method for direct determination of these frequencies.

  3. Silicide precipitation strengthened TiAl

    Energy Technology Data Exchange (ETDEWEB)

    Noda, T. [Special Steel Research Laboratory, Daido Steel Co. Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457 (Japan); Okabe, M. [Special Steel Research Laboratory, Daido Steel Co. Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457 (Japan); Isobe, S. [Special Steel Research Laboratory, Daido Steel Co. Ltd., 2-30 Daido-cho, Minami-ku, Nagoya 457 (Japan); Sayashi, M. [Materials Research Laboratory, Nissan Research Center, Nissan Motor Co. Ltd., 1 Natushima-cho, Yokosuka 237 (Japan)

    1995-02-28

    Precipitation of a titanium silicide Ti{sub 5}Si{sub 3} was found to be beneficial to improvement of the creep resistance of a fully lamellar Ti-48Al-1.5Cr cast alloy without the sacrifice of tensile properties. The addition of 0.26-0.65 mol% Si generates fine precipitates less than 200 nm in size during aging at 900 C for 5 h. The precipitates are effective obstacles to dislocation motion and raise the stress exponents of power law creep significantly. The specific creep strength of Si-containing alloys is better than that of a conventional Ni-base cast superalloy Inconel 713C at 800 C for 10000 h. ((orig.))

  4. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  5. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  6. Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

    Science.gov (United States)

    Zollner, Stefan

    2007-03-01

    Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration

  7. Formation of Silicide Coating layer on U-Mo Powder

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Ji Min; Kim, Sunghwan; Lee, Kyu Hong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    High-density U-Mo alloys are regarded as promising candidates for advanced research reactor fuel as they have shown stable irradiation performance when compared to other uranium alloys and compounds. However, interaction layer formation between the U-Mo alloys and Al matrix degrades the irradiation performance of U-Mo Dispersion fuel. Therefore, the addition of Ti in U-Mo alloys, the addition of Si in a Al matrix, and silicide or nitride coating on the surface of U-Mo particles have been proposed to inhibit the interaction layer growth. In this study, U-Mo alloy powder was produced using a centrifugal atomization method. In addition, silicide coating layers were fabricated by several mixing process changes on the surface of the U-Mo particles. The coated powders were characterized by using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDAX). Decreased annealing duration did not affect the forming of silicide coating layers on the surface of U-7wt%Mo powders. The variation in the mixing ratio between U-7wt%Mo and Si powders had an effect on the quality of silicide coating on the U-7wt%Mo powders. The weight of Si powders should be smaller than that of U-7wt%Mo powders for better silicide coating when it comes to the mixing ratio.

  8. Submicron Features in Higher Manganese Silicide

    Directory of Open Access Journals (Sweden)

    Yatir Sadia

    2013-01-01

    Full Text Available The world energy crisis had increased the demand for alternative energy sources and as such is one of the topics at the forefront of research. One way for reducing energy consumption is by thermoelectricity. Thermoelectric effects enable direct conversion of thermal into electrical energy. Higher manganese silicide (HMS, MnSi1.75 is one of the promising materials for applications in the field of thermoelectricity. The abundance and low cost of the elements, combined with good thermoelectric properties and high mechanical and chemical stability at high temperatures, make it very attractive for thermoelectric applications. Recent studies have shown that Si-rich HMS has improved thermoelectric properties. The most interesting of which is the unusual reduction in thermal conductivity. In the current research, transmission (TEM and scanning (SEM electron microscopy as well as X-ray diffraction methods were applied for investigation of the govern mechanisms resulting in very low thermal conductivity values of an Si-rich HMS composition, following arc melting and hot-pressing procedures. In this paper, it is shown that there is a presence of sub-micron dislocations walls, stacking faults, and silicon and HMS precipitates inside each other apparent in the matrix, following a high temperature (0.9 Tm hot pressing for an hour. These are not just responsible for the low thermal conductivity values observed but also indicate the ability to create complicate nano-structures that will last during the production process and possibly during the application.

  9. Formation of cobalt silicide by ion beam mixing

    Science.gov (United States)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  10. Reaction layers structure of silicide coatings on niobium alloys

    International Nuclear Information System (INIS)

    This paper reports on fused silicide coatings that are used to protect niobium alloys against high temperature oxidation. Quantitative electron microprobe analysis was used to characterize the complex multilayer structure of Si-20w/oFE-20w/oCR fused silicide coating on four niobium containing alloys: niobium, Cb752, WC3009, and Nb-46.5 Ti. The outer coating layer structure on all four alloys was similar, consisting of either two or three phases. The three phase outer coating layer on the niobium, WC3009, and the Nb-Ti substrate alloys was determined to be made of two MSi phases and one MSi2 phase. This outer MSi2 phase contained base alloy elements. Coated samples were compared using cyclic oxidation testing. The fused silicide coating structure and protectiveness were determined to be a function of the base alloy composition

  11. Oxidation resistance of composite silicide coatings on niobium

    International Nuclear Information System (INIS)

    This paper reports the oxidation of NbSi2-MoSi2 composite silicide coatings produced by diffusive siliconizing of molybdenum films on a niobium surface. Molybdenum-coated niobium was siliconized and an x-ray microspectral analysis of the composite silicide coating showed the phase composition to be an ca 80-um-thick outer molybdenum disilicide film with a characteristic coarsely crystalline columnar structure, and inner ca 20-um film of niobium disilicide consisting of the tiny columnar crystals, and a substrate/coating interface comprising a thin, 2-3 um film of lower silicide, i.e., Nb5Si3. The average grain sizes, unit cell parameters, and x-ray determined densities of the Mo films obtained by various methods are shown

  12. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  13. Mo SILICIDE SYNTHISIS BY DUAL ION BEAM DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    T.H. Zhang; Z.Z. Yi; X.Y. Wu; S.J. Zhang; Y.G. Wu; X. Zhang; H.X. Zhang; A.D. Liu; X.J. Zhang

    2002-01-01

    Mo silicides MosSi3 with high quality were prepared using ion beam deposition equip-ment with two Filter Metal Vacuum Arc Deposition (FMEVAD). When the numberof alternant deposition times was 198, total thickness of the coating is 40nm. Thecoatings with droplet free can be readily obtained, so the surface is smooth. TEMobservation shows that Mo and Si alternant deposition coating is conpact structure.The fine Mo silicide grains densely distributed in the coating. The coating adherenceon silicon is excellent.

  14. Transition Metal Silicide Nanowires Growth and Electrical Characterization

    Institute of Scientific and Technical Information of China (English)

    PENG Zu-Lin; LIANG S.; DENG Luo-Gen

    2009-01-01

    We report the characterization of self-assembled epitaxially grown transition metal,Fe,Co,Ni,silicide nanowires(TM-NW)growth and electrical transport properties.NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm,and several micrometers in length.NW orientations strongly depend on substrate crystal orientation,and follow the substrate symmetry.By using conductive-AFM(c-AFM),the electron transport properties of one single NW were measured,the resistivity of crystalline nickel silicide NW was estimated to be 2×10~(-2) Ω·cm.

  15. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    OpenAIRE

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α- B/BxSi stack have been studied by fabricating and measuring diodes where the B depos...

  16. Deposition of aluminide and silicide based protective coatings on niobium

    International Nuclear Information System (INIS)

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. ). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  17. Deposition of aluminide and silicide based protective coatings on niobium

    Science.gov (United States)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  18. A swelling model of LEU silicide fuel for KMRR

    International Nuclear Information System (INIS)

    A lot of efforts have been made internationally to understand the irradiation behavior and the safety characteristics of uranium silicide fuel. One of the important irradiation performance characteristics of the silicide dispersion fuel element is the diametral increase resulting from fuel swelling. This paper represents an attempt to develop the physical model for the swelling, DFSWELL, by modelling the basic irradiation behavior observed from in-reactor experiments. The most important part of developing the swelling model is the identification of the controlling physical processes. The swelling of the silicide fuel is comprised of the volume change due to three major components; (i) the formation of an interfacial layer between the fuel particle and matrix, (ii) the accumulation of gas bubble nucleation, (iii) the accumulation of solid fission products. In this study, the swelling of the fuel element is quantitatively estimated by considering temperature, fission rate, solid fission product build-up and gas bubble behavior. The DFSWELL model which takes into account the above physical components predicts well the absolute magnitude of silicide fuel swelling in accordance with the power histories in comparison with the experimental data

  19. Study of nickel silicide formation by physical vapor deposition techniques

    Science.gov (United States)

    Pancharatnam, Shanti

    Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

  20. Texture in thin film silicides and germanides: A review

    Science.gov (United States)

    De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

    2016-09-01

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  1. Ni based silicides for 45 nm CMOS and beyond

    Energy Technology Data Exchange (ETDEWEB)

    Lauwers, Anne [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)]. E-mail: lauwersa@imec.be; Kittl, Jorge A. [IMEC, Texas Instruments (Belgium); Van Dal, Mark J.H. [IMEC, Philips Research Leuven (Belgium); Chamirian, Oxana [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Pawlak, Malgorzata A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Potter, Muriel de [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Lindsay, Richard [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Raymakers, Toon [Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven (Netherlands); Pages, Xavier [IMEC, ASM Belgium (Belgium); Mebarki, Bencherki [Applied Materials (Belgium); Mandrekar, Tushar [Applied Materials Inc., Santa Clara, CA (United States); Maex, Karen [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2004-12-15

    Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni{sub 2}Si and NiSi on single-crystalline and poly-crystalline silicon and the thermal degradation mechanisms. Ni{sub 2}Si was found to grow by diffusion controlled kinetics with an activation energy of about 1.55 eV on single-crystalline Si. As a result, the excessive silicidation in small features can be reduced in a 2-step Ni-silicide process by reducing the thermal budget of the first RTP step. The mechanisms of thermal degradation of NiSi were studied. Thin NiSi films were found to degrade morphologically while still in the monosilicide phase. Thick NiSi films degrade morphologically at low temperatures and by transformation to NiSi{sub 2} at high temperatures. The reaction of Ni with SiGe substrates and the effect of Ge on the thermal degradation of the Ni-germanosilicide were investigated. Activation energies for the thermal degradation of Ni(SiGe) on SiGe were found to be significantly smaller than the values found for the thermal degradation of NiSi on pure Si. The effect of alloying Ni with Pt or Ta was studied. NiSi films alloyed with Pt or Ta are found to be thermally more stable compared to pure NiSi. Alloying with Pt was found to improve the thermal stability of NiSi on narrow poly-Si gates. The kinetics of Ni{sub 2}Si and NiSi formation on poly silicon were determined as well as their dependence on dopants. The presence of B in high doses was found to slow down the silicide formation significantly. Dopant segregation to the NiSi/oxide interface was observed, which is believed to be responsible for the observed shifts in work function. The sheet resistance of fully Ni-silicided 100 nm poly Si/oxide stacks is found to be stable up to 800 deg. C.

  2. Development and Oxidation Resistance of B-doped Silicide Coatings on Nb-based Alloy

    International Nuclear Information System (INIS)

    Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of 3 Wt.%NH4Cl, 7 Wt.%Si, 90 Wt.%Al2O3+TiB2. B-doped silicide coating was consisted of two layers, an outer layer of NbSi2 and an inner layer of Nb5Si3. Isothermal oxidation resistance of B-doped silicide coating was tested at 1250 .deg. C in static air. B-doped silicide coating had excellent oxidation resistance, because continuous SiO2 scale which serves as obstacle of oxygen diffusion was formed after oxidation

  3. Infrared and Raman characterization of beta iron silicide

    Science.gov (United States)

    Lefki, K.; Muret, P.; Bustarret, E.; Boutarek, N.; Madar, R.; Chevrier, J.; Derrien, J.; Brunel, M.

    1991-12-01

    Samples of beta-iron silicide were prepared by three different methods : solid phase reaction on silicon (111), on a monocrystaline FeSi substrate, and from the melt. These samples have been characterized by x-ray diffraction and investigated by Infrared and Raman spectroscopies. The infrared and Raman lines are compared with theoretical predictions given by the factor group analysis of the silicide primitive cell, which yields the number and the symmetry of the different modes. We relate the red shift of the Infrared and Raman lines on samples with smaller lattice parameters to the presence of Iron vacancies in films deposited on silicon, in agreement with the sign of the thermoelectric power.

  4. Oxidation behavior of molybdenum silicides and their composites

    Energy Technology Data Exchange (ETDEWEB)

    Natesan, K.; Deevi, S. C.

    2000-04-03

    A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo{sub 5}Si{sub 3} alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi{sub 2}-Si{sub 3}N{sub 4} composites that contained 20--80 vol.% Si{sub 3}N{sub 4} were evaluated at 500--1,400 C.

  5. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    Science.gov (United States)

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  6. Fracture of niobium-base silicide coated alloy

    International Nuclear Information System (INIS)

    Mechanical properties and character of fracture of Nb-W-Mo-Zr-C alloy composition with complex by composition and structure silicide coating under different states of stage-by-stage coating are studied. Structural features, character of fracture from ductile to quasibrittle transcrystalline one and, respectively, the composition plasticity level are defined by interrelation of fracture processes in coating, matrix plastic flow and possibility and way of stress relaxation on their boundary

  7. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  8. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  9. Mechanochemical synthesis and spark plasma sintering of the cerium silicides

    International Nuclear Information System (INIS)

    Highlights: • Ce5Si3, Ce3Si2, CeSi, CeSi2−x and CeSi2 were mechanochemically synthesized. • Temperature and pressure were monitored to investigate reaction progress. • All syntheses proceeded through a MSR event followed by rapid solid-state diffusion. • Milling time before MSR correlates well with effective heat of formation. • Some synthesized material was densified by spark plasma sintering. - Abstract: The cerium silicides, Ce5Si3, Ce3Si2, CeSi, CeSi2−y, and CeSi2−x, have been prepared from the elements by mechanochemical processing in a planetary ball mill. Preparation of the cerium silicide Ce5Si4 was unsuccessfully attempted and potential reasons for this are discussed. Temperature and pressure of the milling vial were monitored in situ to gain insight into the mechanochemical reaction kinetics, which include a mechanically-induced self-propagating reaction (MSR). Some prepared powders were consolidated by spark plasma sintering to high density. Starting materials, as-milled powders, and consolidated samples were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The results obtained help elucidate key questions in mechanochemical processing of intermetallics, showing first phase formation similar to thin films, MSR ignition times that are composition- and milling speed-dependent, and sensitivity of stable compound formation on the impact pressure. The results demonstrate mechanochemical synthesis as a viable technique for rare earth silicides

  10. Mechanochemical synthesis and spark plasma sintering of the cerium silicides

    Energy Technology Data Exchange (ETDEWEB)

    Alanko, Gordon A.; Jaques, Brian; Bateman, Allyssa [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Butt, Darryl P., E-mail: darrylbutt@boisestate.edu [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Center for Advanced Energy Studies, 995 University Boulevard, Idaho Falls, ID 83401 (United States)

    2014-12-15

    Highlights: • Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−x} and CeSi{sub 2} were mechanochemically synthesized. • Temperature and pressure were monitored to investigate reaction progress. • All syntheses proceeded through a MSR event followed by rapid solid-state diffusion. • Milling time before MSR correlates well with effective heat of formation. • Some synthesized material was densified by spark plasma sintering. - Abstract: The cerium silicides, Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−y}, and CeSi{sub 2−x}, have been prepared from the elements by mechanochemical processing in a planetary ball mill. Preparation of the cerium silicide Ce{sub 5}Si{sub 4} was unsuccessfully attempted and potential reasons for this are discussed. Temperature and pressure of the milling vial were monitored in situ to gain insight into the mechanochemical reaction kinetics, which include a mechanically-induced self-propagating reaction (MSR). Some prepared powders were consolidated by spark plasma sintering to high density. Starting materials, as-milled powders, and consolidated samples were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The results obtained help elucidate key questions in mechanochemical processing of intermetallics, showing first phase formation similar to thin films, MSR ignition times that are composition- and milling speed-dependent, and sensitivity of stable compound formation on the impact pressure. The results demonstrate mechanochemical synthesis as a viable technique for rare earth silicides.

  11. Immobilization of Uranium Silicide in Sintered Iron-Phosphate Glass

    International Nuclear Information System (INIS)

    This work is a continuation of a previous one performed in vitrification of uranium silicide in borosilicate and iron-silicate glasses, by sintering.We present the results obtained with an iron-phosphate glass developed at our laboratory and we compare this results with those obtained with the above mentioned glasses. The main objective was to develop a method as simple as possible, so as to get a monolithic glass block with the appropriate properties to be disposed in a deep geological repository.The thermal transformation of the uranium silicide was characterized by DTA/TG analysis and X-ray diffraction.We determined the evolution of the crystalline phases and the change in weight.Calcined uranium silicide was mixed with natural U3O8, the amount of U3O8 was calculated to simulate an isotopic dilution of 4%.This material was mixed with powdered iron-phosphate glass (in wt.%: 64,9 P2O5; 22,7 Fe2O3; 8,1 Al2O3; 4,3 Na2O) in different proportions (in wt%): 7%, 10% y 15%.The powders were pressed and sintered at temperatures between 585 y 670 °C. Samples of the sintered pellet were prepared for the lixiviation tests (MCC-1P: monolithic samples; deionised water; 90° C; 7, 14 and 28 days).The samples showed a quite good durability (0,6 g.m-2.day-1), similar to borosilicate glasses.The microstructure of the glass samples showed that the uranium particles are much better integrated to the glass matrix in the iron-phosphate glasses than in the borosilicate or iron-silicate glasses.We can conclude that the sintered product obtained could be a good alternative for the immobilization of nuclear wastes with high content of uranium, as the ones arising from the conditioning of research reactors spent fuels

  12. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    International Nuclear Information System (INIS)

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of 235U. Fuel plates containing 33 v/o U3Si and U3Si2 behaved very well up to this burnup. Plates containing 33 v/o U3Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U3Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U3Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs

  13. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  14. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  15. Nonuniformity effects in a hybrid platinum silicide imaging device

    Science.gov (United States)

    Dereniak, Eustace L.; Perry, David L.

    1992-05-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a starting infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using, plans provided by the Rome Laboratory at Hanscom AFB. Testing of the device revealed largely satisfactory performance, with notable exception in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this area included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365's expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  16. Atomic size effects studied by transport in single silicide nanowires

    Science.gov (United States)

    Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M.; Holtgrewe, K.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.

    2016-03-01

    Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

  17. Work function characterization of solution-processed cobalt silicide

    Science.gov (United States)

    Shihab Ullah, Syed; Robinson, Matt; Hoey, Justin; Sky Driver, M.; Caruso, A. N.; Schulz, Douglas L.

    2012-06-01

    Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance.

  18. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    Science.gov (United States)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  19. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    OpenAIRE

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V.A.; Mironov, S.A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-01-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si...

  20. Formation and Oxidation Resistance of Silicide Coatings for Mo and Mo-Based Alloys

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The forming process of silicide coatings on pure Mo and Mo-base alloys, obtained by the gasphase deposition method, has been studied by examining the microstructure of coatings and the relationship between coating thickness and process parameters. It was shown that the growth of coatings was diffusion-controlled, the diffusion of silicon to be coated into Mo or Mo-base alloys was mainly responsible for the formation of silicide. The relationship between initial silicide thickness and oxidation resistance was also investigated, and the equation of service life of the coatings at high temperature in air is presented.

  1. Silicidation in Pd/Si thin film junction-Defect evolution and silicon surface segregation

    Energy Technology Data Exchange (ETDEWEB)

    Abhaya, S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Amarendra, G. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)], E-mail: amar@igcar.gov.in; Venugopal Rao, G.; Rajaraman, R.; Panigrahi, B.K.; Sastry, V.S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2007-09-25

    Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

  2. Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si

    International Nuclear Information System (INIS)

    Interface characterization of pulsed laser deposited (PLD) Ti thin films on Si substrates using secondary ion mass spectrometry (SIMS), grazing incidence X-ray diffraction (GIXRD) and grazing incidence X-ray reflectivity (GIXRR) reveals the growth of titanium silicides (predominantly C54-TiSi2) layers at room temperature. These silicides nucleate and grow only at higher temperatures if deposited by other physical vapor deposition techniques. The films have been subjected to isothermal and isochronal annealing under vacuum with a view to enhancing interface reaction and interdiffusion. The silicide phase formation at room temperature is due to the energetic Ti species available in PLD plume. The silicides formed in PLD have exhibited high thermal stability

  3. Stress Evolution During Ni-Si Compound Formation for Fully Silicided (FUSI) Gates

    Energy Technology Data Exchange (ETDEWEB)

    Torregiani,C.; Van Bockstael, C.; Detavernier, C.; Lavoie, C.; Lauwers, A.; Maex, K.; Kittl, J.

    2007-01-01

    The stress (force) evolution during the formation of different Ni silicide phases was monitored by in situ curvature measurements, for the reaction of thin Ni films of various thicknesses with 100 nm polycrystalline-Si deposited on oxidized (1 0 0) Si substrates. The silicide phase formation was also monitored by in situ X-ray diffraction, allowing to match and interpret the stress evolution in terms of the formation of the different silicide phases. We found that stresses developed during the formation of the different silicides can be explained qualitatively in terms of the corresponding volume changes at the reacting interfaces. Furthermore, the matching between XRD and force curve reveals that the highest compressive stress is related to the formation of the Ni31Si12 phase, and that the stress formed is relaxed when the reaction is completed.

  4. Advanced Lightweight Silicide and Nitride Based Materials for Turbo-Engine Applications.

    OpenAIRE

    Drawin, S.; Justin, J.F.

    2011-01-01

    International audience Refractory metal silicides and nitride-based ceramics combine two properties that may lead to substantial reductions in aircraft fuel consumption : compared to the most advanced nickel-based superalloys presently used in aeronautical turbines, they can withstand higher temperatures and may have lower densities. Niobium silicide-based alloys and silicon nitride / molybdenum disilicide composites are currently being developed for turbine hot section components for both...

  5. SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers

    OpenAIRE

    Bain, M.; El Mubarek, H A; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P L; Hall, S.; Ashburn, P.

    2005-01-01

    A technology is described for fabricating SiGe hetero-junction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance m...

  6. SiGe HBTs on bonded SOI incorporating buried silicide layers

    OpenAIRE

    Bain, M.; El Mubarek, A. W.; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P. L. F.; Hall, Steven; Ashburn, Peter

    2005-01-01

    A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance me...

  7. Information for irradiation and post-irradiation of the silicide fuel element prototype P-07

    International Nuclear Information System (INIS)

    Included in the 'Silicides' Project, developed by the Nuclear Fuels Department of the National Atomic Energy Commission (CNEA), it is foreseen the qualification of this type of fuel for research reactors in order to be used in the Argentine RA-3 reactor and to confirm the CNEA as an international supplier. The paper presents basic information on several parameters corresponding to the new silicide prototype, called P-07, to be taken into account for its irradiation, postirradiation and qualification. (author)

  8. Status of the atomized uranium silicide fuel development at KAERI

    Energy Technology Data Exchange (ETDEWEB)

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H. [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  9. Europium Silicide – a Prospective Material for Contacts with Silicon

    Science.gov (United States)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  10. Capping of rare earth silicide nanowires on Si(001)

    International Nuclear Information System (INIS)

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires

  11. Capping of rare earth silicide nanowires on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Reiß, Paul; Niermann, Tore; Lehmann, Michael [Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin (Germany); Schubert, Markus Andreas [IHP–Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany)

    2016-01-04

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  12. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    Energy Technology Data Exchange (ETDEWEB)

    Hofman, G.L.; Neimark, L.A.

    1985-01-01

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of /sup 235/U. Fuel plates containing 33 v/o U/sub 3/Si and U/sub 3/Si/sub 2/ behaved very well up to this burnup. Plates containing 33 v/o U/sub 3/Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U/sub 3/Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U/sub 3/Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs.

  13. Attempt to produce silicide fuel elements in Indonesia

    International Nuclear Information System (INIS)

    After the successful experiment to produce U3Si2 powder and U3Si2-Al fuel plates using depleted U and Si of semiconductor quality, silicide fuel was synthesized using x-Al available at the Fuel Element Production Installation (FEPI) at Serpong, Indonesia. Two full-size U3Si2-Al fuel elements, having similar specifications to the ones of U3O8-Al for the RSG-GAS (formerly known as MPR-30), have been produced at the FEPI. All quality controls required have been imposed to the feeds, intermediate, as well as final products throughout the production processes of the two fuel elements. The current results show that these fuel elements are qualified from fabrication point of view, therefore it is expected that they will be permitted to be tested in the RSG-GAS, sometime by the end of 1989, for normal (∝50%) and above normal burn-up. (orig.)

  14. Mechanical, elastic and thermodynamic properties of crystalline lithium silicides

    CERN Document Server

    Schwalbe, Sebastian; Trepte, Kai; Biedermann, Franziska; Mertens, Florian; Kortus, Jens

    2016-01-01

    We investigate crystalline thermodynamic stable lithium silicides phases (LixSiy) with density functional theory (DFT) and a force-field method based on modified embedded atoms (MEAM) and compare our results with experimental data. This work presents a fast and accurate framework to calculate thermodynamic properties of crystal structures with large unit cells with MEAM based on molecular dynamics (MD). Mechanical properties like the bulk modulus and the elastic constants are evaluated in addition to thermodynamic properties including the phonon density of states, the vibrational free energy and the isochoric/isobaric specific heat capacity for Li, Li12Si7, Li7Si3, Li13Si4, Li15Si4, Li21Si5, Li17Si4, Li22Si5 and Si. For a selected phase (Li13Si4) we study the effect of a temperature dependent phonon density of states and its effect on the isobaric heat capacity.

  15. Synthesis and design of silicide intermetallic materials. 1998 annual progress report

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Vaidya, R.U.; Hollis, K.J.; Kung, H.H.

    1999-03-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of developing industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. The progress made on the program in this period is summarized.

  16. Synthesis of Co-silicides and fabrication of microwavepower device using MEVVA source implantation

    Institute of Scientific and Technical Information of China (English)

    张通和; 吴瑜光; 钱卫东; 刘要东; 张旭

    2002-01-01

    Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 mA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50 mA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the transistors decrease markedly; the microwave property has been improved obviously.

  17. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S.; Wall, Donald [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Jordan-Sweet, Jean; Lavoie, Christian [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States)

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  18. Theory of Interface States at Silicon / Transition - - Silicide Interfaces.

    Science.gov (United States)

    Lim, Hunhwa

    The Si/NiSi(,2)(111) interface is of both fundamental and techno- logical interest: From the fundamental point of view, it is the best characterized of all semiconductor/metal interfaces, with two well-determined geometries (A and B) involving nearly perfect bonding. (This is because Si and NiSi(,2) have nearly the same lattice spacing.) Consequently, a theoretical treatment of this system makes sense--as it would not for messier systems--and one can have some confidence that the theoretical predictions are relevant to experimental observa- tions. From the technological point of view, Si/NiSi(,2) is representative of the class of semiconductor/metal interfaces that are currently of greatest interest in regard to electronic devices--Si/transition -metal-silicide interfaces. The calculations of this dissertation are for the intrinsic interface states of Si/NiSi(,2)-A geometry. These calculations also provide a foundation for later studies of defects at this interface, and for studies of other related systems, such as CoSi(,2). The calculations employ empirical tight-binding Hamiltonians for both Si and NiSi(,2) (with the parameters fitted to prior calculations of the bulk band structures, which appear to be in agreement with the available experimental data on bulk Si and NiSi(,2)). They also employ Green's function techniques--in particular, the subspace Hamiltonian technique. Our principal results are the following: (1) Interface state disper- sion curves are predicted along the symmetry lines (')(GAMMA)(')M, (')M(')K and (')K(')(GAMMA) of the surface Brillouin zone. (2) A prominent band of interface states is found which disperses downward from an energy within the Si band gap to an energy below the Si valence band edge E(,(upsilon)) as the planar wavevector (')k increases from (')(GAMMA) ((')k = 0) to (')M or (')K (symmetry points at boundary of the surface Brillouin zone). This band of inter- face states should be observable. It produces a peak in the surface

  19. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  20. High Quality Factor Platinum Silicide Microwave Kinetic Inductance Detectors

    CERN Document Server

    Szypryt, P; Ulbricht, G; Bumble, B; Meeker, S R; Bockstiegel, C; Walter, A B

    2016-01-01

    We report on the development of Microwave Kinetic Inductance Detectors (MKIDs) using platinum silicide as the sensor material. MKIDs are an emerging superconducting detector technology, capable of measuring the arrival times of single photons to better than two microseconds and their energies to around ten percent. Previously, MKIDs have been fabricated using either sub-stoichiometric titanium nitride or aluminum, but TiN suffers from spatial inhomogeneities in the superconducting critical temperature and Al has a low kinetic inductance fraction, causing low detector sensitivity. To address these issues, we have instead fabricated PtSi microresonators with superconducting critical temperatures of 944$\\pm$12~mK and high internal quality factors ($Q_i \\gtrsim 10^6$). These devices show typical quasiparticle lifetimes of $\\tau_{qp} \\approx 30$--$40~\\mu$s and spectral resolution, $R = \\lambda / \\Delta \\lambda$, of 8 at 406.6~nm. We compare PtSi MKIDs to those fabricated with TiN and detail the substantial advanta...

  1. Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Mo, Kun [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States); Harp, Jason [Argonne National Lab. (ANL), Argonne, IL (United States)

    2016-09-15

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions need to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions and therefore evaluate the qualification of U3Si2 as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U3Si2 fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U3Si2. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

  2. Mixing of Al into uranium silicides reactor fuels

    International Nuclear Information System (INIS)

    SEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. The authors have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27Al(p, γ) 28Si resonance nuclear reaction were used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300 C. Initially U mixes into the Al layer and Al mixes into the U3Si. At a low dose, the Al layer is converted into UAl4 type compound while near the interface the phase U(Al.93Si.07)3 grows. Under irradiation, Al diffuses out of the UAl4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3Si2 is slower than in U3Si, but after high dose irradiation the Al concentration extends much farther into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed

  3. Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Abhaya, S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Amarendra, G. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)]. E-mail: amar@igcar.gov.in; Kalavathi, S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Gopalan, Padma [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Kamruddin, M. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Tyagi, A.K. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Sastry, V.S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Sundar, C.S. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)

    2007-02-15

    Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni{sub 2}Si, NiSi and NiSi{sub 2} phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi{sub 2} phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.

  4. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  5. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

    Science.gov (United States)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.

    2016-07-01

    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  6. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various temperatures

    Indian Academy of Sciences (India)

    K V Sai Srinadh; Nidhi Singh; V Singh

    2007-12-01

    Extremely fine coherent precipitates of ordered Ti3Al and relatively coarse incoherent precipitates of 2 silicide exist together in the near -titanium alloy, Timetal 834, in the dual phase matrix of primary and transformed . In order to assess the role of these precipitates, three heat treatments viz. WQ, WQ–A and WQ–OA, were given to have no precipitates, Ti3Al and silicide and only silicide precipitates in the respective conditions. Tensile properties in the above three heat treated conditions were determined at room temperature, 673 K and 873 K. It was observed that largely Ti3Al precipitates were responsible for increase in the yield strength and decrease in ductility in this alloy.

  7. Comparison of JRR-4 core neutronic performance between silicide fuel and TRIGA fuel

    International Nuclear Information System (INIS)

    Neutronic analyses on the JRR-4 core loaded with 20 wt% Low Enriched Uranium (LEU) fuels have been performed using SRAC code system. The LEU fuels studied in this work are ETR type silicide one and TRIGA one. For each type of them, parametrical analyses were done as the function of uranium loading in the fuel element to see changes of core excess reactivity, thermal neutron flux, fuel burnup and so on. From many cell and whole core calculations, following results have obtained. (a) A uranium density of 3.8 g/cm3 is a good value of the Silicide fuel for JRR-4. (b) In the case of TRIGA fuel, a uranium weight fraction of 40% to the total TRIGA fuel pin weight is one of adequate values. (c) The silicide core shows a good performance on the thermal neutron flux (d) and the TRIGA core can achieve a very high burnup. (author)

  8. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  9. Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

    Science.gov (United States)

    Chen, Renkun

    2013-06-01

    Thermoelectric devices directly convert heat into electricity and are very attractive for waste heat recovery and solar energy utilization. If thermoelectric devices can be made sufficiently efficient and inexpensive, then they will become a transformative energy technology that can tap a significant portion (10-20%) of the vast amount of heat existing in nature as well as industrial processes. Nanopowders of Earth-abundant, silicide-based materials, such as Mg2Si and its alloys, provide a unique opportunity to realize this goal. This article will present an overview of recent advances in the synthesis and thermoelectric properties of silicide-based nanostructured materials.

  10. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    OpenAIRE

    Vlasova M.; Kakazey M.; Gonzales-Rodriguez J.G.; Dominguez G.; Ristić Momčilo M.; Scherbina O.; Tomila T.; Isaeva L.; Timofeeva I.I.; Bukov A.

    2002-01-01

    The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 ...

  11. Progress in alkaline peroxide dissolution of low-enriched uranium metal and silicide targets

    International Nuclear Information System (INIS)

    This paper reports recent progress on two alkaline peroxide dissolution processes: the dissolution of low-enriched uranium metal and silicide (U3Si2) targets. These processes are being developed to substitute low-enriched for high-enriched uranium in targets used for production of fission-product 9'9Mo. Issues that are addressed include (1) dissolution kinetics of silicide targets, (2) 99Mo lost during aluminum dissolution, (3) modeling of hydrogen peroxide consumption, (4) optimization of the uranium foil dissolution process, and (5) selection of uranium foil barrier materials. Future work associated with these two processes is also briefly discussed. (author)

  12. Use of silicide fuel in the Ford Nuclear Reactor - to lengthen fuel element lifetimes

    Energy Technology Data Exchange (ETDEWEB)

    Bretscher, M.M.; Snelgrove, J.L. [Argonne National Lab., IL (United States); Burn, R.R.; Lee, J.C. [Univ. of Michigan, Ann Arbor, MI (United States). Phoenix Memorial Lab.

    1995-12-31

    Based on economic considerations, it has been proposed to increase the lifetime of LEU fuel elements in the Ford Nuclear Reactor by raising the {sup 235}U plate loading from 9.3 grams in aluminide (UAl{sub x}) fuel to 12.5 grams in silicide (U{sub 3}Si{sub 2}) fuel. For a representative core configuration, preliminary neutronic depletion and steady state thermal hydraulic calculations have been performed to investigate core characteristics during the transition from an all-aluminide to an all-silicide core. This paper discusses motivations for this fuel element upgrade, results from the calculations, and conclusions.

  13. Water splitting and electricity with semiconducting silicides in sunlight

    Energy Technology Data Exchange (ETDEWEB)

    Demuth, Martin [Max-Planck-Institut fuer Bioanorganische Chemie, Muelheim an der Ruhr (Germany); H2 Solar GmbH, Loerrach (Germany); Kerpen, Klaus; Kuklya, Andriy; Wuestkamp, Marc-Andre [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany)

    2010-07-01

    Generation of hydrogen and oxygen from water is described using mainly the semiconductor titanium disilicide as catalyst and halogen light which closely mimics solar radiation. The reactions are carried out under non-aerobic conditions, i.e., under nitrogen. High efficiencies are reached at 1.1-1.2 bar pressure. In the first phase of these reactions the catalytically active centers are built up. During this phase of reaction the kinetics of the water splitting process is growing in and leads to a linear dependence in the further course of the reactions which consists of >96% water splitting to yield hydrogen and oxygen in a 2:1 ratio. Hydrogen is partially and reversibly stored physically, depending on temperature. Oxygen behaves differently since it is stored entirely under the applied reaction conditions (50-80 C and light) and can be liberated from storage upon heating the slurries in the dark. This allows convenient separation of hydrogen and oxygen. The stability of titanium disilicide has been positively tested over several months. This material is abundant and inexpensive besides that it absorbs most of the solar radiation. Further, XRD and XPS studies show that titanium disilicide is 80% crystalline and the oxide formation is limited to a few molecular layers in depth. By using labeled water it was shown that labeled dioxygen appears in the gas phase of such reactions, this showing definitively that hydrogen evolution occuring here stems from photochemical splitting of water. Further, water splitting is part of a project which involves photoelectrochemistry and in which the silicides are used as light-receiving electrode and transition metal-coated anodes serve to split water. (orig.)

  14. Silicon Framework-Based Lithium Silicides at High Pressures.

    Science.gov (United States)

    Zhang, Shoutao; Wang, Yanchao; Yang, Guochun; Ma, Yanming

    2016-07-01

    The bandgap and optical properties of diamond silicon (Si) are not suitable for many advanced applications such as thin-film photovoltaic devices and light-emitting diodes. Thus, finding new Si allotropes with better bandgap and optical properties is desirable. Recently, a Si allotrope with a desirable bandgap of ∼1.3 eV was obtained by leaching Na from NaSi6 that was synthesized under high pressure [Nat. Mater. 2015, 14, 169], paving the way to finding new Si allotropes. Li is isoelectronic with Na, with a smaller atomic core and comparable electronegativity. It is unknown whether Li silicides share similar properties, but it is of considerable interest. Here, a swarm intelligence-based structural prediction is used in combination with first-principles calculations to investigate the chemical reactions between Si and Li at high pressures, where seven new compositions (LiSi4, LiSi3, LiSi2, Li2Si3, Li2Si, Li3Si, and Li4Si) become stable above 8.4 GPa. The Si-Si bonding patterns in these compounds evolve with increasing Li content sequentially from frameworks to layers, linear chains, and eventually isolated Si ions. Nearest-neighbor Si atoms, in Cmmm-structured LiSi4, form covalent open channels hosting one-dimensional Li atom chains, which have similar structural features to NaSi6. The analysis of integrated crystal orbital Hamilton populations reveals that the Si-Si interactions are mainly responsible for the structural stability. Moreover, this structure is dynamically stable even at ambient pressure. Our results are also important for understanding the structures and electronic properties of Li-Si binary compounds at high pressures. PMID:27302244

  15. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  16. Schottky barrier MOSFET structure with silicide source/drain on buried metal

    Institute of Scientific and Technical Information of China (English)

    Li Ding-Yu; Sun Lei; Zhang Sheng-Dong; Wang Yi; Liu Xiao-Yan; Han Ru-Qi

    2007-01-01

    In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal (SSDOM). The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel case. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V (for ErSi) and the bottom barrier is 0.6 eV (for CoSi2).Compared with the corresponding conventional Schottky barrier MOSFET structures (CSB), the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability (1.2 mA/μm at Vds = 1 V, Vgs = 2 V) and the high Ion/Imin ratio (106) are both achieved by applying the SSDOM structure.

  17. Core-hole effects in the x-ray-absorption spectra of transition-metal silicides

    NARCIS (Netherlands)

    WEIJS, PJW; CZYZYK, MT; VANACKER, JF; SPEIER, W; GOEDKOOP, JB; VANLEUKEN, H; HENDRIX, HJM; DEGROOT, RA; VANDERLAAN, G; BUSCHOW, KHJ; WIECH, G; FUGGLE, JC

    1990-01-01

    We report systematic differences between the shape of the Si K x-ray-absorption spectra of transition-metal silicides and broadened partial densities of Si p states. We use a variety of calculations to show that the origin of these discrepancies is the core-hole potential appropriate to the final st

  18. X-ray Emission and Absorption Studies of Silicides in Relation to their Electronic Structure

    NARCIS (Netherlands)

    Weijs, P.J.W.; Wiech, G.; Zahorowski, W.; Speier, W.; Goedkoop, J.B.; Czyzyk, Marek; Acker, J.F. van; Leuken, E. van; Groot, R.A. de; Laan, G. van der; Sarma, D.D.; Kumar, L.; Buschow, K.H.J.; Fuggle, J.C.

    1990-01-01

    The valence bands and conduction bands of about 30 transition metal silicides (of which we concentrate on 4 here) have been investigated by measurements of Si X-ray emission bandsspectra, X-ray absorption spectra near the Si K (1s) edge, photoemission spectra, and Bremsstrahlung Isochromat spectra.

  19. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Tim

    2013-01-01

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035°C in an Ar/H2 atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide...

  20. Synthesis and characterization of silicide coating on niobium alloy produced using molten salt method

    International Nuclear Information System (INIS)

    Nb based alloys are promising structural materials for high temperature reactors due to their strength at higher temperatures. However Nb based alloys undergoes substantial oxidation at high temperatures. In order to improve its oxidation resistance property at high temperatures (>400 °C) a protective layer must be provided to avoid direct contact of the component to atmospheric oxygen. In the present work, attempts have been made to obtain silicide coatings on Nb alloy using molten salt method. In this method, deposition of silicon is a multistep process. Metallic Si produced by the subsequent reactions in the molten salt diffuses and an oxidation resistant silicide coating forms on the surface of substrate. To study the variation in the thickness of coated layer on the Nb alloy, experiments were carried out at different temperature and time periods. These silicide coated samples were characterized using optical, SEM and XRD techniques. Based on these results mechanism of silicide coating on Nb alloys has been discussed in detail. (author)

  1. Mechanical properties of niobium alloy with molybdenum-hafnium-silicide coating

    International Nuclear Information System (INIS)

    The method of bending loading permits studying mechanical characteristics (σ σ0.2 and deflection f) in the composite of niobium alloy with silicide coating on molybdenum and hafnium base. Results of mechanical characteristics are compared with microstructural peculiarities of the failure development. Criteria which determine strength and plastic properties of the composite as dependent on the structural state are established

  2. A thermodynamic assessment for synthesizing transition metal silicides by the combustion synthesis process

    International Nuclear Information System (INIS)

    Transition metal silicides have important applications in various disciplines. These include uses as interconnects in chips, as coatings, as heating elements, etc. As their uses increased, various processing techniques were adopted to produce them. These vary from chemical/physical vapor deposition, rapid thermal processing, and sputtering for thin film processing; traditional vacuum casting and powder metallurgical routes are used to produce bulk samples. In this paper, the authors are interested in those transition metal silicides which have the potential for use in the bulk form, possibly in the aerospace or other demanding applications. The primary requirements are high refractoriness, low density, high strength and good oxidation resistance. It is the oxidation resistance that makes the silicides better candidates as compared to the other intermetallics. Meschter argued that most engineering materials retain substantial strength up to 80% of their melting points. Therefore, for an operating temperature of 1500C, the melting point of the typical candidate may be 1950C, while the limit in density can be defined by the density of Ni (8.75 gn/cc). As an alterative, combustion synthesis (CS) processing may prove to be a viable route for producing these transition metal silicides. In this process, and exothermic reaction is initiated in a compact containing stoichiometric mixture of elemental powders

  3. High pressure studies on uranium and thorium silicide compounds: Experiment and theory

    DEFF Research Database (Denmark)

    Yagoubi, S.; Heathman, S.; Svane, A.;

    2013-01-01

    , for ThSi, USi and USi2, respectively. At ambient conditions, the uranium silicides crystallize in tetragonal structures (space groups: I4/mmm for USi and I41/amd for USi2), while ThSi adopts an orthorhombic structure (space group: Pbnm) (including an anharmonic analysis of the silicon). These structures...

  4. Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides

    Energy Technology Data Exchange (ETDEWEB)

    Bailey, Glenn; Hu, Yao, Zhi; Smith, Paul Martin; Tay, Sing Pin; Thakur, Randhir; Yang, Jiting

    1999-05-03

    ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium disilicide (TiSiz), which is the most widely used silicide for ULSI applications, exists in two crystallographic phases: the high resistance, metastable C49 phase and the low resistance, stable C54 phase. The major issue with TiSiz is the increasing thermal budget required to transform the C49 phase into the low resistance C54 phase as linewiths decrease below 0.25 pm. Annealing above 900"C to obtain this transformation often results in thermal degradation, so it is desirable to reduce the transformation temperature. The transformation temperature has been shown to be a fi.mction of many factors including microstructure, grain size, and impurities. In this paper we report an investig+ion of rapid thermal silicidation of titanium films (250, 400, and 600 A) on single crystalline silicon at temperatures from 300 to 1000"C. The ramp rates for these experiments are 5, 30, 70, and 200oC/s. The transformation temperature decreases as the ramp rate increases and as the initial film thickness increases. Scanning electron microscopy (SEM) is used to analyze the resultant film microstructure. The ramp rate influence on Ti silicidation is also investigated on polycrystalline Si lines with widths ranging from 0.27 to 3.0 pm.

  5. Thermal Stability Study from Room Temperature to 1273 K (1000 °C) in Magnesium Silicide

    Science.gov (United States)

    Stefanaki, Eleni-Chrysanthi; Hatzikraniotis, Euripides; Vourlias, George; Chrissafis, Konstantinos; Kitis, George; Paraskevopoulos, Konstantinos M.; Polymeris, George S.

    2016-10-01

    Doped magnesium silicide has been identified as a promising and environmentally friendly advanced thermoelectric material in the temperature range between 500 K and 800 K (227 °C and 527 °C). Besides the plethora of magnesium silicide thermoelectric advantages, it is well known for its high sensitivity to oxidation. Oxidation is one of the primary instability mechanisms of degradation of high-temperature Mg2Si thermoelectric devices, as in the presence of O2, Mg2Si decomposes to form MgO and Si. In this work, commercial magnesium silicide in bulk form was used for thermal stability study from room temperature to 1273 K (1000 °C). Various techniques such as DTA-TG, PXRD, and FTIR have been applied. Moreover, the application of thermoluminescence (TL) as an effective and alternative probe for the study of oxidation and decomposition has been exploited. The latter provides qualitative but very helpful hints toward oxidation studies. The low-detection threshold of thermoluminescence, in conjunction with the chemical composition of the oxidation byproducts, consisting of MgO, Mg2SiO4, and SiO2, constitute two powerful motivations for further investigating its viable use as proxy for instability/decomposition studies of magnesium silicide. The partial oxidation reaction has been adopted due to the experimental fact that magnesium silicide is monitored throughout the heating temperature range of the present study. Finally, the role of silicon dioxide to the decomposition procedure, being in amorphous state and gradually crystallizing, has been highlighted for the first time in the literature. Mg2Si oxidation takes place in two steps, including a mild oxidation process with temperature threshold of 573 K (300 °C) and an abrupt one after 773 K (500 °C). Implications on the optimum operational temperature range for practical thermoelectric (TE) applications have also been briefly discussed.

  6. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  7. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  8. Plasma boron and the effects of boron supplementation in males.

    Science.gov (United States)

    Green, N R; Ferrando, A A

    1994-11-01

    Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all.

  9. Exchange reactions of plutonium with silicides and estimation of the enthalpy of the formation of Pu5Si3

    International Nuclear Information System (INIS)

    An approximate ΔHof,298 value has been determined for Pu5Si3 through a study of exchange reactions of selected metal silicides with plutonium. The reactions were carried out by arc-melting. Results show that Pu5Si3 is intermediate in stability between V3Si and Mo3Si, and has a ΔHof,298 of -52±13 kJ/g-atom. Estimates of ΔHof,298 for the higher plutonium silicides are: Pu3Si2 -54, PuSi -60, Pu3Si5 -58, and PuSi2 -56 kJ/g-atom with uncertainties of ±18 kJ/g-atom. The plutonium silicides are found to be more stable than both the thorium and uranium silicides. (orig.)

  10. Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process

    Science.gov (United States)

    Cheng, Zeng; Palubiak, Darek; Zheng, Xiaoqing; Deen, M. Jamal; Peng, Hao

    2016-09-01

    Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond dead time) and good timing performance (less than 100 ps). In this work, the impact of the silicide layer on SPAD’s characteristics, including the breakdown voltage, dark count rate (DCR), after-pulsing probability and photon detection efficiency (PDE) is investigated. For this purpose, two sets of SPAD structures in a standard 130 nm complementary metal oxide semiconductor (CMOS) process are designed, fabricated, measured and compared. A factor of 4.5 (minimum) in DCR reduction, and 5 in PDE improvements are observed when the silicide layer is removed from the SPAD structure. However, the after-pulsing probability of the SPAD without silicide layer is two times higher than its counterpart with silicide. The reasons for these changes will be discussed.

  11. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  12. Oxidation of Silicon and Boron in Boron Containing Molten Iron

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium-frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that silicon and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400 ℃. The favorable oxidation temperature of silicon was about 1 300-1 350 C. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.

  13. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; Zhong, J. X.

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  14. Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vaporvacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2was formed in a neodymium-implanted silicon thinfilm during the as-implanted state, but there was only single neodymium silicide compound in the post-annealed state,and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violetluminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence(PL) increased with increasing the neodymium ion fluence. Moreover,the photoluminescence was closely dependent onthe temperature of rapid thermal annealing (RTA). A mechanism ofphotoluminescence was discussed.

  15. Development of fused slurry silicide coatings for tantalum reentry heat shields

    Science.gov (United States)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  16. Development of a fused slurry silicide coating for the protection of tantalum alloys

    Science.gov (United States)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  17. RA-3 reactor core with uranium silicide fuel elements P-07 type

    International Nuclear Information System (INIS)

    Following the studies on the utilization of fuel elements (FE) containing uranium silicide, core of the RA-3 was analyzed with several calculation models. At first, the present situation, i.e. the core charged with normal FE (U3O8), has been analyzed to validate the simulation methodology comparing with experimental results and to establish reference data to 5 and 10 MW able to be compared with future new situations. Also, CITVAP's nuclear data libraries to be used in irradiation experiment planning were completed. The results were satisfactory and were applied to the study of the core containing P-07 FE [U3Si2], in face of a future core change. Comparing with the performance of the U3O8FE, the silicides ones show the following advantages: - average burnup: 45 % greater; -extraction burnup increase 12 %; and, -the residence time [in full power days] could be a 117 % greater. (author)

  18. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    Science.gov (United States)

    Beckmann, C.; Zhang, K.; Hofsäss, H.; Brüsewitz, C.; Vetter, U.; Bharuth-Ram, K.

    2015-12-01

    The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  19. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing

    International Nuclear Information System (INIS)

    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  20. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    Science.gov (United States)

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2. PMID:27243944

  1. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  2. Calculation of xenon 135 poisoning reactivity of RSG-GAS silicide fuelled

    International Nuclear Information System (INIS)

    Calculation of xenon 135 poisoning reactivity of RSG-GAS silicide fuelled. One of the important reactivity effects during reactor operation is a xenon poisoning, the reactivity depends on the power and time operation of reactor. The calculation was performed for RSG-GAS oxide 2,96 gr U/cc, silicide 2,96 gr U/cc silicide 3,55 gr U/cc fuelled using Xen Sam code, that is the xen sam code reform. In Xen Sam code, the xenon concentration is obtained by solving the simultaneous differential equation by means of limit different method. The results showed that the calculation values are close to the experiments. The equilibrium xenon reactivity will be higher if there is the increasing in the uranium density, while there is no significant change in the peak of xenon and dead time of the reactor. It shown that there is no influence in xenon reactivity for the same power levels and operation time more than 50 hours. At the other hand, if the operation time lest than 50 hours, there will be influences in equilibrium xenon reactivity, peak xenon and dead time reactor. For different power levels with the same operation time will be a significant influence to the xenon reactivity

  3. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    Science.gov (United States)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  4. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    Energy Technology Data Exchange (ETDEWEB)

    Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation); Senkov, V. M. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation); Nalivaiko, O. Y. [JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus); Novikau, A. G.; Gaiduk, P. I. [Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  5. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    Science.gov (United States)

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.

  6. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O' Neill, Anthony; Horsfall, Alton; Goss, Jonathan [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Cumpson, Peter [School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2013-03-21

    Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

  7. A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Chang-Geun [Nano-Bio Electric Devices Team, IT Convergence Technology Research Division, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: cgahn@etri.re.kr; Kim, Tae-Youb; Yang, Jong-Heon; Baek, In-Bok [Nano-Bio Electric Devices Team, IT Convergence Technology Research Division, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Korea, Republic of); Cho, Won-ju [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Lee, Seongjae [Quantum Photonic Science Research Center and BK21 Program Division of Advanced Research and Education in Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2008-02-15

    A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nickel silicide (Ni{sub 2}Si) formation, resulting in no in-diffusion of Ni into the channel. Next, the second step of the annealing process was performed at 500 deg. C for the formation of mono-nickel silicide (NiSi). Finally, the optimized Ni silicide SD with low resistance (5 {omega}/{open_square}) and a low leakage current was achieved on the UTB. Using the proposed two-step silicide process, UTB RF MOSFET with a gate length of 50 nm a 20-nm UTB was successfully fabricated and showed the good RF properties with a cut-off frequency of 138 GHz.

  8. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  9. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  10. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  11. Rapid accurate isotopic measurements on boron in boric acid and boron carbide.

    Science.gov (United States)

    Duchateau, N L; Verbruggen, A; Hendrickx, F; De Bièvre, P

    1986-04-01

    A procedure is described whereby rapid and accurate isotopic measurements can be performed on boron in boric acid and boron carbide after fusion of these compounds with calcium carbonate. It allows the determination of the isotopic composition of boron in boric acid and boron carbide and the direct assay of boron or the (10)B isotope in boron carbide by isotope-dilution mass spectrometry.

  12. The new ternary silicide Gd5CoSi2: Structural, magnetic and magnetocaloric properties

    International Nuclear Information System (INIS)

    Gd5CoSi2 was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr5B3-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) A as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd5CoSi2 reveal a ferromagnetic behaviour below TC=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change ΔTad is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T. -- Graphical abstract: The adiabatic temperature change ΔTad was determined by combining the heat capacity measurements and the magnetization data. As expected, a peak near the Curie temperature of the Gd5CoSi2 ternary silicide is observed, with a maximum of ΔTad around 3.1 and 5.9 K for ΔH=2 and 4.6 T, respectively. Display Omitted Research Highlights: → We prepare and characterize for the first time the ternary silicide Gd5CoSi2. → Gd5CoSi2 crystallizes in the tetragonal structure deriving from the Cr5B3-type. → Gd5CoSi2 shows a ferromagnetic behaviour below 168 K associated with magnetocaloric properties.

  13. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.; Solak, H.; Cerrina, F. [Univ. of Wisconsin-Madison, Stoughton, WI (United States)] [and others

    1997-04-01

    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  14. Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effect of annealing temperature on the formation of the PtSi phase, distribution of silicides and the surface morphologies of silicides films is investigated by XPS, AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-Si with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.

  15. Electrochemical deposition of coating from carbide, boride and silicide of IV-VIA group metals in ion melts

    International Nuclear Information System (INIS)

    The prehistory of the development of methods of production of metal-like refractory coatings (titanium, tantalum, niobium, vanadium, zirconium carbides, borides and silicides) with the help of high-temperature electrochemical synthesis (HTES) in ionic melts is described. A review is made on studies into the process of HTES of refractory metal borides, carbides and silicides, manufacture conditions for the coatings and electrolyte compositions (oxide, oxide-fluoride, chloride, chloride-fluoride melts). Structure and properties of coatings produced by the method of HTES are under consideration

  16. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  17. Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties

    International Nuclear Information System (INIS)

    In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal–oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I–V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures

  18. High-Temperature Compatible Nickel Silicide Thermometer And Heater For Catalytic Chemical Microreactors

    DEFF Research Database (Denmark)

    Jensen, Søren; Quaade, U.J.; Hansen, Ole

    2005-01-01

    Integration of heaters and thermometers is important for agile and accurate control and measurement of the thermal reaction conditions in microfabricated chemical reactors (microreactors). This paper describes development and operation of nickel silicide heaters and temperature sensors...... for temperatures exceeding 700 °C. The heaters and thermometers are integrated with chemical microreactors for heterogeneous catalytic conversion of gasses, and thermally activated catalytic conversion of CO to CO2 in the reactors is demonstrated. The heaters and thermometers are shown to be compatible...... with operation temperatures exceeding 700 °C....

  19. Magnetization reversal of ultrathin Fe film grown on Si(111) using iron silicide template

    Institute of Scientific and Technical Information of China (English)

    He Wei; Zhan Qing-Feng; Wang De-Yong; Chen Li-Jun; Sun Young; Cheng Zhao-Hua

    2007-01-01

    Ultrathin Fe films were epitaxially grown on Si(111) by using an ultrathin iron silicide film with p(2 × 2) surface reconstruction as a template. The surface structure and magnetic properties were investigated in situ by low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and surface magneto-optical effect (SMOKE). Polar SMOKE hysteresis loops demonstrate that the Fe ultrathin films with thickness t< 6 ML (monolayers) exhibit perpendicular magnetic anisotropy. The characters of M-H loops with the external magnetic field at difference angles and the angular dependence of coercivity suggest that the domain-wall pinning plays a dominant role in the magnetization reversal process.

  20. Transient behavior of silicide plate-type fuel during reactivity initiated accident conditions

    International Nuclear Information System (INIS)

    The results of transient experiments using a low enriched uranium silicide mini-plate fuel (19 w/o 235U, 4.8gU/c.c.) for research reactors are described. Studies were addressed mainly to clarifying 1) fuel failure threshold and failure mechanism, and 2) dimensional stability of the fuel plate at the temperature ranged from 140degC to 970degC. The pulse irradiation of the mini-plate fuels was performed in the Nuclear Safety Research Reactor (NSRR) at the Japan Atomic Energy Research Institute (JAERI). (author)

  1. Oxidation resistant silicide coatings for Nbss/Nb5Si3 in-situ composites

    International Nuclear Information System (INIS)

    Oxidation protective silicide coatings for the new Nbss/Nb5Si3 in-situ composites were prepared by molten salt method. The experiment results indicated that the majority phase in the coating was NbSi2. More Nb5Si3 was formed at the interface between the substrate and NbSi2 layer during the oxidation. The oxidation resistance of the composites was improved by the coating, significantly. The improvement in the oxidation resistance of the composites maybe mainly attributed to the formation of large amount of SiO2 and Al2O3 on surface of coating. (orig.)

  2. Synthesis of metallic silicide fullerenes and the characteristics thereof by mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    CHEN YiChi; GUO Liang; ZHU LiQun

    2007-01-01

    Direct current arc discharge is used for the study on the synthesis of metallofullerenes (MFs) to discover whether there exist metallic silicide fullerenes and silicon fullerenes. The resultant components are isolated by the multistage high-performance liquid chromatography (HPLC) and analyzed with the Time-of-Flight (TOF) mass spectrometry. Results show that there exist fullerenes such as SiC69, YSi2C64, YSi2C78, Y3Si2C78 as well as Y2Si2C90 which are structurally similar to (Y2C2)@C82.

  3. Synthesis of metallic silicide fullerenes and the characteristics thereof by mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Direct current arc discharge is used for the study on the synthesis of metallo-fullerenes (MFs) to discover whether there exist metallic silicide fullerenes and silicon fullerenes. The resultant components are isolated by the multistage high-performance liquid chromatography (HPLC) and analyzed with the Time-of-Flight (TOF) mass spectrometry. Results show that there exist fullerenes such as SiC69, YSi2C64, YSi2C78, Y3Si2C78 as well as Y2Si2C90 which are structurally similar to (Y2C2)@C82.

  4. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    Science.gov (United States)

    Fatima, Can Oguz, Ismail; ćakır, Deniz; Hossain, Sehtab; Mohottige, Rasika; Gulseren, Oguz; Oncel, Nuri

    2016-09-01

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  5. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  6. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  7. Boron toxicity in Lemna gibba

    OpenAIRE

    Mayra Sánchez Villavicencio; Carlos Álvarez Silva; Guadalupe Miranda Arce

    2007-01-01

    Total soluble phenols and total chlorophylls content, changes of biomass and concentration factor in Lemna gibba exposed to different concentrations of boron were measured. Day six soluble phenols showed significant differences in treatment with 10 mg/L of boron. At day ten, chlorophylls content in treatment 2 mg/L concentration increased respect to other experimental groups and control group, there were no significant differences. Biomass of Lemna gibba decreased significant in treatments wi...

  8. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  9. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    Science.gov (United States)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  10. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    International Nuclear Information System (INIS)

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon

  11. Microstructure of the irradiated U 3Si 2/Al silicide dispersion fuel

    Science.gov (United States)

    Gan, J.; Keiser, D. D.; Miller, B. D.; Jue, J.-F.; Robinson, A. B.; Madden, J. W.; Medvedev, P. G.; Wachs, D. M.

    2011-12-01

    The silicide dispersion fuel of U 3Si 2/Al is recognized as the best performance fuel for many nuclear research and test reactors with up to 4.8 gU/cm 3 fuel loading. An irradiated U 3Si 2/Al dispersion fuel ( 235U ˜ 75%) from the high-flux side of a fuel plate (U0R040) from the Reduced Enrichment for Research and Test Reactors (RERTR)-8 test was characterized using transmission electron microscopy (TEM). The fuel was irradiated in the Advanced Test Reactor (ATR) for 105 days. The average irradiation temperature and fission density of the U 3Si 2 fuel particles for the TEM sample are estimated to be approximately 110 °C and 5.4 × 10 27 f/m 3. The characterization was performed using a 200-kV TEM. The U/Si ratio for the fuel particle and (Si + Al)/U for the fuel-matrix-interaction layer are approximately 1.1 and 4-10, respectively. The estimated average diameter, number density and volume fraction for small bubbles (fuel particle are ˜94 nm, 1.05 × 10 20 m -3 and ˜11%, respectively. The results and their implication on the performance of the U 3Si 2/Al silicide dispersion fuel are discussed.

  12. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  13. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    Energy Technology Data Exchange (ETDEWEB)

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  14. Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry

    International Nuclear Information System (INIS)

    The differential scanning calorimetry (DSC) technique is employed to study the formation of different silicide compounds of Zr thin-film deposited on a 100 μm-thick Si (1 0 0) substrate by dc sputtering. A detailed analysis shows that silicide layers start growing at  ∼246 °C that changes to stable ZrSi2 at 627 °C via some compounds with different stoichiometric ratios of Zr and Si. It is further observed that oxygen starts reacting with Zr at  ∼540 °C but a stoichiometric ZrO2 film is formed after complete consumption of Zr metal at 857 °C. A further rise in temperature changes a part of ZrSi2 to Zr-Silicate. The synchrotron radiation-based grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies also corroborate the above findings. Atomic force microscopy is also carried out on the samples. It is evident from the observations that an intermixing and nucleation of Zr and Si occur at lower temperature prior to the formation of the interfacial silicate layer. Zr-Silicate formation takes place only at a higher temperature. (paper)

  15. Mitigation of interfacial silicide reactions for electroplated CoPt films on Si substrates

    Science.gov (United States)

    Oniku, Ololade D.; Arnold, David P.

    2015-12-01

    We report in this paper the influence of film thickness on the material and magnetic properties of electroplated CoPt permanent magnets. Layers of CoPt magnets with film thicknesses ranging from 0.5 μm to 5 μm are deposited into photoresist molds (3.5 mm x 3.5 mm square and 5 μm x 50 μm arrays) on a (100)Si substrate coated with 10 nm/100 nm Ti/Cu adhesion/seed layer. Results show an unexpected reduction in magnetic properties for films below 2 μm thick. This effect is determined to be a consequence of metal-silicide reactions at the substrate interface during annealing leading to the formation of a non-magnetic layer at the interface. Subsequently, a TiN diffusion-barrier layer is added to inhibit the silicide reaction and thereby maintain strong magnetic properties (Hci ∼800 kA/m, Mr/Ms = 0.8) in micron- thick electroplated CoPt layers.

  16. Prospect of Uranium Silicide fuel element with hypostoichiometric (Si ≤3.7%)

    International Nuclear Information System (INIS)

    An attempt to obtain high uranium-loading in silicide dispersion fuel element using the fabrication technology applicable nowadays can reach Uranium-loading slightly above 5 gU/cm3. It is difficult to achieve a higher uranium-loading than that because of fabricability constraints. To overcome those difficulties, the use of uranium silicide U3Si based is considered. The excess of U is obtained by synthesising U3Si2 in Si-hypostoichiometric stage, without applying heat treatment to the ingot as it can generate undesired U3Si. The U U will react with the matrix to form U alx compound, that its pressure is tolerable. This experiment is to consider possibilities of employing the U3Si2 as nuclear fuel element which have been performed by synthesising U3Si2-U with the composition of 3.7 % weigh and 3 % weigh U. The ingot was obtained and converted into powder form which then was fabricated into experimental plate nuclear fuel element. The interaction between free U and Al-matrix during heat-treatment is the rolling phase of the fuel element was observed. The study of the next phase will be conducted later

  17. "Nanoparticle-in-alloy" approach to efficient thermoelectrics: silicides in SiGe.

    Science.gov (United States)

    Mingo, N; Hauser, D; Kobayashi, N P; Plissonnier, M; Shakouri, A

    2009-02-01

    We present a "nanoparticle-in-alloy" material approach with silicide and germanide fillers leading to a potential 5-fold increase in the thermoelectric figure of merit of SiGe alloys at room temperature and 2.5 times increase at 900 K. Strong reductions in computed thermal conductivity are obtained for 17 different types of silicide nanoparticles. We predict the existence of an optimal nanoparticle size that minimizes the nanocomposite's thermal conductivity. This thermal conductivity reduction is much stronger and strikingly less sensitive to nanoparticle size for an alloy matrix than for a single crystal one. At the same time, nanoparticles do not negatively affect the electronic conduction properties of the alloy. The proposed material can be monolithically integrated into Si technology, enabling an unprecedented potential for micro refrigeration on a chip. High figure-of-merit at high temperatures (ZT approximately 1.7 at 900 K) opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

  18. Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

    Science.gov (United States)

    Vismara, R.; Isabella, O.; Zeman, M.

    2016-04-01

    Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

  19. Effect of annealing on magnetic properties and silicide formation at Co/Si interface

    Indian Academy of Sciences (India)

    Shivani Agarwal; V Ganesan; A K Tyagi; I P Jain

    2006-11-01

    The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a vacuum of 4 × 10-8 Torr having a deposition rate of about 0.1 Å/s. Reactivity at Co/Si interface is important for the understanding of silicide formation in thin film system. In the present paper, cobalt silicide films were characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the surface and interface morphologies and depth profile, respectively. The roughness of the samples was found to increase up to temperature, 300°C and then decreased with further rise in temperature, which was due to the formation of crystalline CoSi2 phase. The effect of mixing on magnetic properties such as coercivity, remanence etc at interface has been studied using magneto optic Kerr effect (MOKE) techniques at different temperatures. The value of coercivity of pristine sample and 300°C annealed sample was found to be 66 Oe and 40 Oe, respectively, while at high temperature i.e. 748°C, the hysteresis disappears which indicates the formation of CoSi2 compound.

  20. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  1. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  2. Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

    International Nuclear Information System (INIS)

    Highlights: ► The presence of Al slows down the Ni2Si–NiSi phase transformation but significantly promotes the NiSi2−xAlx formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. ► The Ni0.91Al0.09/Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000 s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. -- Abstract: The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si–NiSi phase transformation but significantly promote the NiSi2−xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. Compared to the Ni0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1−xAlx alloy silicidation. This work demonstrated that thermally stable Ni1−xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices

  3. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Yilmaz, M. Tolga [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Chemical Engineering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)

    2005-01-31

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions.

  4. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  5. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    Energy Technology Data Exchange (ETDEWEB)

    Bruce S. Kang

    2005-10-10

    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  6. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  7. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  8. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  9. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  10. Modified fused silicide coatings for tantalum (Ta-10W) reentry heat shields

    Science.gov (United States)

    Packer, C. M.; Perkins, R. A.

    1973-01-01

    Results are presented of a program of research to develop a reliable, high performance, fused slurry silicide coating for the Ta-10W alloy. The effort was directed toward developing new and improved formulations for use at 2600 to 2800 F (1700 to 1811 K) in an atmospheric reentry thermal protection system with a 100-mission capability. Based on a thorough characterization of isothermal and cyclic oxidation behavior, bend transition temperatures, room- and elevated-temperature tensile properties, and creep behavior, a 2.5 Mn-33Ti-64.5Si coating (designated MTS) provides excellent protection for the Ta-10W alloy in simulated reentry environments. An extensive analysis of the oxidation behavior and characteristics of the MTS coating in terms of fundamental mechanisms also is presented.

  11. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-07-14

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  12. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-08-11

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  13. The fabrication of metal silicide nanodot arrays using localized ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jin; Kim, Tae-Gon; Min, Byung-Kwon; Lee, Sang Jo, E-mail: bkmin@yonsei.ac.kr [School of Mechanical Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2010-12-03

    We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).

  14. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  15. Fabrication of uranium silicide dispersion fuel by atomization for research reactor

    International Nuclear Information System (INIS)

    Atomizing technology has been developed to eliminate the difficulties in comminution of the tough U3Si and to take advantage of the spherical shape and the rapid solidification. The comparison between the conventional dispersion fuel with comminuted powder and the newly developed fuel with atomized powder has been made. As a result, the processes, powdering uranium silicide and heat treatment to U3Si, become simplified. The extruding pressure of blended powder with atomized powder was lower than that of blended powder with comminuted powder. The elongation of the atomization processed fuel meat was much higher than that of comminution processed fuel meats. It appears that the loading density of U3Si in fuel meat can be increased by using atomized U3Si powder. The thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be much improved due to the spherical shape of atomized powder. (author)

  16. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle

    Science.gov (United States)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu

    2011-01-01

    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  17. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  18. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  19. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  20. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  1. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  2. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  3. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  4. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  5. Oxidation-resistant Ge-doped silicide coating on Cr-Cr2Nb alloys by pack cementation

    International Nuclear Information System (INIS)

    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on Cr-Cr2Nb alloys in a single processing step. The morphology and composition of the coating depended both on the pack composition and processing schedule and also on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi2 and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. Under cyclic and isothermal oxidation conditions, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation and from pesting by the formation of a Ge-doped silica film. (orig.)

  6. Effect of P+ ions on the microstructure and the nature of the formed silicides in the Cr/Si system

    International Nuclear Information System (INIS)

    The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P+ doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 deg. C for different times, shows that the presence of phosphorus leads to the formation of CrSi2 disilicide, free of defects, and Cr3Si silicide for lower and higher annealing times, respectively. In the case of undoped substrate the formed CrSi2 disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed

  7. Production Cycle for Large Scale Fission Mo-99 Separation by the Processing of Irradiated LEU Uranium Silicide Fuel Element Targets

    OpenAIRE

    Abdel-Hadi Ali Sameh

    2013-01-01

    Uranium silicide fuels proved over decades their exceptional qualification for the operation of higher flux material testing reactors with LEU elements. The application of such fuels as target materials, particularly for the large scale fission Mo-99 producers, offers an efficient and economical solution for the related facilities. The realization of such aim demands the introduction of a suitable dissolution process for the applied U3Si2 compound. Excellent results are achieved by the oxidiz...

  8. Dimensional stability of low enriched uranium silicide plate-type fuel for research reactors at transient conditions

    International Nuclear Information System (INIS)

    This paper describes the result of transient experiments using low enriched uranium silicide plate-type fuel for research reactors. The pulse irradiation was carried out at Nuclear Safety Research Reactor (NSRR) in Japan Atomic Energy Research Institute. The results obtained were: (1) At fuel plate temperature of below 400degC, a good dimensional stability of the tested fuel was kept. No fuel failure occurred. (2) At a plate temperature of about 540degC, a local crack was initiated on the Al-3% Mg alloy cladding. Once the cladding temperature exceeded the melting point of 640degC, the fuel plate was degraded much by increased bowing and cracking of the denuded fuel meat occurred after relocation of molten Al cladding. Despite of these degradation, neither fragmentation of the fuel plate nor mechanical energy generation occurred up to the cladding temperature of 971degC. (3) At the temperatures of around 925degC, the reaction of silicide particles with molten Al in the matrix and that of cladding occurred, forming Al riched U (Al, Si) compounds and Si riched (U, Si) compounds at the outermost surface of the silicide particles. (author)

  9. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.R.; Zheng, M.H.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)

    1995-08-01

    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  10. Jaguar Procedures for Detonation Behavior of Explosives Containing Boron

    Science.gov (United States)

    Stiel, L. I.; Baker, E. L.; Capellos, C.

    2009-12-01

    The Jaguar product library was expanded to include boron and boron containing products by analysis of Available Hugoniot and static volumetric data to obtain constants of the Murnaghan relationships for the components. Experimental melting points were also utilized to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX—boron mixtures calculated with these relationships using Jaguar are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that the boron does not react near the detonation front or that boron mixtures exhibit eigenvalue detonation behavior (as shown by some aluminized explosives), with higher detonation velocities at the initial points. Analyses of calorimetric measurements for RDX—boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the detonation properties of the formulation.

  11. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  12. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  13. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States); Mei, Zhigang [Argonne National Lab. (ANL), Argonne, IL (United States); Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  14. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  15. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  16. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  17. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  18. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  19. Characterization of novel heterophasic powdered silicide-type material for high-temperature protection systems

    International Nuclear Information System (INIS)

    Novel multicomponent heterophasic powdered material of silicide-type is presented. The powdered material is intended for forming high-temperature protective multifunction coatings able to protect different hot-loaded structural elements of aerospace industry from refractory metals alloys under severe oxidizing conditions in high-enthalpy and super/hypersonic oxygen-containing gas flows. The powdered material base on complexly composition of Si-Ti-Mo system modified with B,Y,W. Technological conception of its obtaining and powder making process are examined. The powders were worked out in accordance with early performed functional structural model of special materials for coatings with the increased self-healing ability. The coatings can be deposited from the specially prepared abovementioned powders by plasma spraying processes or any one of other coating methods ensuring the conservation of morphological peculiarities of microstructure and phase composition of powdered material (detonation spraying technique, from slurry ...). Finally the results of some properties of novel heterophasic silicidetype powders and some properties of protective coating deposited on the niobium base alloys by means of plasma spraying technique are presented. (author)

  20. Burnup determination of silicide MTR fuel elements (20% 235U) in the LFR laboratory

    International Nuclear Information System (INIS)

    The LFR facility is a radiochemical laboratory designed and constructed with a hot-cells line, a glove-box and a fume hood, all of them suited to work radioactive materials. At the beginning of the LFR operation a series of dissolutions of MTR irradiated silicide fuel elements was performed, and determined its isotopic composition of 235U, 239Pu and 148Nd (the last one as burn up monitor), by the thermal ionization mass spectrometry (TIMS). These assays are linked to the IAEA RLA/4/018 Regional Project 'Management of Spent Fuel from Research Reactors'. It is concluded that this technique of burn up measurement is powerful and accurate when properly applied, and permit to validate the calculation codes when isotopic dilution is performed. It is worth noticed the LFR capacity to carry on different research and development programs in the nuclear fuel cycle field, such as the previously mentioned absolute burn up measurements, or the evaluation of radioactive waste immobilization processes and researches on burnable poisons. (author)

  1. The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

    Science.gov (United States)

    Chaia, N.; Mathieu, S.; Rouillard, F.; Vilasi, M.

    2015-02-01

    V-4Cr-4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi2 coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi2 coating has mechanical properties compatible with the V-4Cr-4Ti alloy for SFR applications.

  2. The whole-core LEU silicide fuel demonstration in the JMTR

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)] [and others

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  3. Status of core conversion with LEU silicide fuel in JRR-4

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  4. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    Energy Technology Data Exchange (ETDEWEB)

    farahani, A.A.; Corradini, M.L. [Univ. of Wisconsi, Madison, WI (United States)

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  5. Oxidation behavior of niobium aluminide intermetallics protected by aluminide and silicide diffusion coatings

    International Nuclear Information System (INIS)

    The isothermal and cyclic oxidation behavior of a new class of damage-tolerant niobium aluminide (Nb3Al-xTi-yCr) intermetallics is studied between 650 C and 850 C. Protective diffusion coatings were deposited by pack cementation to achieve the siliciding or aluminizing of substrates with or without intervening Mo or Ni layers, respectively. The compositions and microstructures of the resulting coatings and oxidized surfaces were characterized. The isothermal and cyclic oxidation kinetics indicate that uncoated Nb-40Ti-15Al-based intermetallics may be used up to ∼750 C. Alloying with Cr improves the isothermal oxidation resistance between 650 C and 850 C. The most significant improvement in oxidation resistance is achieved by the aluminization of electroplated Ni interlayers. The results suggest that the high-temperature limit of niobium aluminide-based alloys may be increased to 800 C to 850 C by aluminide-based diffusion coatings on ductile Ni interlayers. Indentation fracture experiments also indicate that the ductile nickel interlayers are resistant to crack propagation in multilayered aluminide-based coatings

  6. Crystal structure of the ternary silicide Gd2Re3Si5

    Directory of Open Access Journals (Sweden)

    Vitaliia Fedyna

    2014-12-01

    Full Text Available A single crystal of the title compound, the ternary silicide digadolinium trirhenium pentasilicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubooctahedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square antiprisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5 Å and isolated squares with an Re—Re distance of 2.9683 (6 Å.

  7. The Comparison Of Silicon Analysis For The Uranium Silicide Fuel Using Spectrophotometrical And Gravimetrical Methods

    International Nuclear Information System (INIS)

    The analysis of silicon content in the uranium silicide fuel spectro-photometrical and gravimetrical method have been performed. The nitrous oxide-acetylene was used in the atomic absorption spectrophotometry (AAS) on the wave length of 251.6 nm, and the mixture of ammonium hepta molybdate complexes and SnC12 as reductor were applied during analysis by UV-VIS spectrophotometry (UV-VIS) on the wave length of 757.5 mm. The reagent of HCLO4 and HNO3 were used for determining Si content by gravimetrical methods. The results of this comparison is as follows: the accuracy result is around 96.37 % + 0.24 % for the Si concentration up to 300 ppm (the AAS), is 138.60 % = 0.43 % for the Si concentration range between 0.1-1.5 ppm (UV-VIS), and is 51.13 % + 0.8 % for 1 gram of Si (gravimetry). The results also show that the lowest analytical error is obtained by AAS method

  8. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  9. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  10. Boron water quality for the Plynlimon catchments

    Directory of Open Access Journals (Sweden)

    C. Neal

    1997-01-01

    Full Text Available Boron concentrations in rainfall, throughfall and stemflow for Spruce stands, mist, streamwater and groundwater are compared with chloride to assess atmospheric sources and catchment input-output balances for the Plynlimon catchments. In rainfall, boron concentration averages about 4.5 μg-B l-1 and approximately two thirds of this comes from anthropogenic sources. In through-fall and stemflow, boron concentrations are approximately a factor of ten times higher than in rainfall. This increase is associated with enhanced scavenging of mist and dry deposition by the trees. As the sampling sites were close to a forest edge, this degree of scavenging is probably far higher than in the centre of the forest. The throughfall and stemflow concentrations of boron show some evidence of periodic variations with time with peak concentrations occurring during the summer months indicating some vegetational cycling. In mist, boron concentrations are almost twenty times higher than in rainfall and anthropogenic sources account for about 86% of this. Within the Plynlimon streams, boron concentrations are about 1.4 to 1.7 times higher than in rainfall. However, after allowance for mist and dry deposition contributions to atmospheric deposition, it seems that, on average, about 30% of the boron input is retained within the catchment. For the forested catchments, felling results in a disruption of the biological cycle and a small increase in boron leaching from the catchment results in the net retention by the catchment being slightly reduced. Despite the net uptake by the catchment, there is clear evidence of a boron component of weathering from the bedrock. This is shown by an increased boron concentration in a stream influenced by a nearby borehole which increased groundwater inputs. The weathering component for boron is also observed in Plynlimon groundwaters as boron concentrations and boron to chloride ratios are higher than for the streams. For these

  11. Boron Separation by the Two-step Ion-Exchange for the Isotopic Measurement of Boron

    Institute of Scientific and Technical Information of China (English)

    WANG,Qing-Zhong(王庆忠); XIAO,Ying-Kai(肖应凯); WANG,Yun-Hui(王蕴惠); ZHANG,Chong-Geng(张崇耿); WEI,Hai-Zhen(魏海珍)

    2002-01-01

    An improved procedure for extraction and purification of boron from natural samples is presented. The separation and purification of boron was carried out using a boron-specific resin, Amberlite IRA743, and a mixed ion exchange resin,Dowex 50W × 8 and Ion Exchanger Ⅱ resin. Using the mixed ion exchange resin which adsorbs all cations and anions except boron, the HCl and other cations and anions left in eluant from the Amberlite IRA 743 were removed effectively. In this case, boron loss can be avoided because the boron-bearing solution does not have to be evaporated to reach dryness to dislodge HCl. The boron recovery ranged from 97.6% to 102% in this study. The isotopic fractionation of boron can be negligible within the precision of the isotopic measurement. The results show that boron separation for the isotopic measurement by using both Amberlite IRA 743 resin and the mixed rein is more effective than that using Amberlite IRA 743 resin alone. The boron in samples of brine, seawater, rock, coral and foraminifer were separated by this procedure. Boron isotopic compositions of these samples were measured by thermal ionization mass spectrometry in this study.

  12. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  13. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  14. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  15. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  16. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  17. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  18. Boronated mesophase pitch coke for lithium insertion

    Science.gov (United States)

    Frackowiak, E.; Machnikowski, J.; Kaczmarska, H.; Béguin, F.

    Boronated carbons from mesophase pitch have been used as materials for lithium storage in Li/carbon cells. Doping by boron has been realized by co-pyrolysis of coal tar pitch with the pyridine-borane complex. Amount of boron in mesocarbon microbeads (MCMB) varied from 1.4 to 1.8 wt.% affecting the texture of carbon. Optical microscopy and X-ray diffractograms have shown tendency to more disordered structure for boron-doped carbon. The values of specific reversible capacity ( x) varied from 0.7 to 1.1 depending significantly on the final temperature of pyrolysis (700-1150°C). The optimal charge/discharge performance was observed for boronated carbon heated at 1000°C.

  19. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  20. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  1. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  2. Orientation relationship between alpha-prime titanium and silicide S2 in alloy Ti-6Al-5Zr-0. 5Mo-0. 25Si

    Energy Technology Data Exchange (ETDEWEB)

    Ramachandra, C.; Singh, V.

    1985-03-01

    Orientation relationships between the silicide S2 and the matrix of alpha-prime platelets are established for the titanium alloy 685 (Ti-6Al-5Zr-0.5Mo-0.25Si), a near-alpha alloy designed for the high-temperature components of jet engines. A stereogram showing the parallel planes of alpha-prime and S2 is presented for the alloy in the water-quenched and aged condition. A table is also presented which lists the parallel planes of the matrix and the silicide along with the misfit parameters. The results obtained are compared with the orientation relationships reported in the literature. 14 references.

  3. M(5)-silicon (M= titanium, niobium, molybdenum) based transition-metal silicides for high temperature applications

    Science.gov (United States)

    Tang, Zhihong

    2007-12-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600ºC. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2 and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500ºC. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500ºC by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L ↔ Nbss + NbB was determined to occur at 2104+/-5°C by DTA.

  4. Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

    International Nuclear Information System (INIS)

    Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR's uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ''hot segment'' analysis of narrow axial regions along the plate and ''hot streak'' analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about -7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square (χ2) test for goodness of fit to normal distributions was not satisfied

  5. Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Gamble, Kyle [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation; Mei, Zhi-Gang [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division

    2016-08-29

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions need to be well-understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U3Si2 at LWR conditions. The fission gas behavior of U3Si2 can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U3Si2 for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U3Si2 at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U3Si2 as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

  6. Boron nanoparticles inhibit turnour growth by boron neutron capture therapy in the murine B16-OVA model

    DEFF Research Database (Denmark)

    Petersen, Mikkel Steen; Petersen, Charlotte Christie; Agger, Ralf;

    2008-01-01

    Background: Boron neutron capture therapy usually relies on soluble, rather than particulate, boron compounds. This study evaluated the use of a novel boron nanoparticle for boron neutron capture therapy. Materials and Methods: Two hundred and fifty thousand B16-OVA tumour cells, pre...

  7. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  8. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  9. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  10. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  11. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    The goal of this research was to determine the composition of boron deposits produced by pyrolysis of boron tribromide, and to use the results to (a) determine the experimental conditions (reaction temperature, etc.) necessary to produce alpha-rhombohedral boron and (b) guide the development/refinement of the pyrolysis experiments such that large, high purity crystals of alpha-rhombohedral boron can be produced with consistency. Developing a method for producing large, high purity alpha-rhombohedral boron crystals is of interest because such crystals could potentially be used to achieve an alpha-rhombohedral boron based neutron detector design (a solid-state detector) that could serve as an alternative to existing neutron detector technologies. The supply of neutron detectors in the United States has been hampered for a number of years due to the current shortage of helium-3 (a gas used in many existing neutron detector technologies); the development of alternative neutron detector technology such as an alpha-rhombohedral boron based detector would help provide a more sustainable supply of neutron detectors in this country. In addition, the prospect/concept of an alpha-rhombohedral boron based neutron detector is attractive because it offers the possibility of achieving a design that is smaller, longer life, less power consuming, and potentially more sensitive than existing neutron detectors. The main difficulty associated with creating an alpha-rhombohedral boron based neutron detector is that producing large, high purity crystals of alpha-rhombohedral boron is extremely challenging. Past researchers have successfully made alpha-rhombohedral boron via a number of methods, but no one has developed a method for consistently producing large, high purity crystals. Alpha-rhombohedral boron is difficult to make because it is only stable at temperatures below around 1100-1200 °C, its formation is very sensitive to impurities, and the conditions necessary for its

  12. Synthesis of Boron Nanorods by Smelting Non-Toxic Boron Oxide in Liquid Lithium

    OpenAIRE

    Amartya Chakrabarti; Tao Xu; Laura K. Paulson; Krise, Kate J.; Maguire, John A; Hosmane, Narayan S.

    2010-01-01

    In contrast to the conventional bottom-up syntheses of boron nanostructures, a unique top-down and greener synthetic strategy is presented for boron nanorods involving nontoxic boron oxide powders ultrasonically smelted in liquid lithium under milder conditions. The product was thoroughly characterized by energy dispersive X-ray analysis, atomic emission spectroscopy, thermogravimetric analysis and, UV-Vis spectroscopy, including structural characterization by transmission electron microscop...

  13. Developments in boron magnetic resonance imaging (MRI)

    Energy Technology Data Exchange (ETDEWEB)

    Schweizer, M.

    1995-11-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain.

  14. First boronization in KSTAR: Experiences on carborane

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Suk-Ho, E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Kun-Su; Kim, Kwang-Pyo; Kim, Kyung-Min; Kim, Hong-Tack [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, Jong-Ho; Woo, Hyun-Jong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Park, Jae-Min [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Park, Eun-Kyong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Woong-Chae; Kim, Hak-Kun; Park, Kap-Rai; Yang, Hyung-Lyeol; Oh, Yeong-Kook; Na, Hoon-Kyun [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Lho, Taehyeop [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, Kyu-Sun [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    First boronization was performed in KSTAR tokamak during 2009 campaign in order to reduce oxygen impurities and to lower the power loss due to radiation. We report the results from the experiences on carborane during the first boronization in KSTAR. After the boronization, H{sub 2}O and O{sub 2} level in the vacuum vessel are reduced significantly. The characteristics of the deposited thin films were analyzed by variable angle spectroscopic ellipsometry, XPS, and AES. {approx}1.78 x 10{sup 16} cm{sup -2} s{sup -1} of carbon flux on the wall is estimated by using cavity technique.

  15. From Boron Cluster to Two-Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation

    OpenAIRE

    Hongsheng Liu; Junfeng Gao; Jijun Zhao

    2013-01-01

    As attractive analogue of graphene, boron monolayers have been theoretically predicted. However, due to electron deficiency of boron atom, synthesizing boron monolayer is very challenging in experiments. Using first-principles calculations, we explore stability and growth mechanism of various boron sheets on Cu(111) substrate. The monotonic decrease of formation energy of boron cluster BN with increasing cluster size and low diffusion barrier for a single B atom on Cu(111) surface ensure cont...

  16. Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity

    Energy Technology Data Exchange (ETDEWEB)

    Frigeri, P.A. [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain); Nos, O., E-mail: oriol_nos@ub.ed [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain); Ecotecnia (ALSTOM Group) (Spain); Bengoechea, S.; Frevert, C.; Asensi, J.M.; Bertomeu, J. [Dept. de Fisica Aplicada i Optica, Universitat de Barcelona, Barcelona-08028 (Spain)

    2009-04-30

    Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.

  17. Effects of nitrogen annealing on surface structure, silicide formation and magnetic properties of ultrathin films of Co on Si(100)

    Indian Academy of Sciences (India)

    Ganesh K Rajan; Shivaraman Ramaswamy; C Gopalakrishnan; D John Thiruvadigal

    2012-02-01

    Effects of nitrogen annealing on structural and magnetic properties of Co/Si (100) up to 700°C has been studied in this paper. Ultrathin Co films having a constant thickness of 50 Å were grown on Si (100) substrates using electron-beam evaporation under very high vacuum conditions at room temperature. Subsequently, the samples were annealed at temperatures ranging from 100–700°C in a nitrogen environment at atmospheric pressure. Sample quality and surface morphology were examined using atomic force microscopy. Silicide formation and the resultant variation in crystallographic arrangement were studied using X-ray diffractometer. The magnetization measurements done using a vibrating sample magnetometer indicate a decrease in coercivity and retentivity values with increase in annealing temperature. Resistivity of the samples measured using a four-point probe set up shows a decrease in resistivity with increase in annealing temperature. Formation of various silicide phases at different annealing temperatures and the resultant variation in the magnetic susceptibility has been thoroughly studied and quantified in this work.

  18. Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface

    Institute of Scientific and Technical Information of China (English)

    DING Tao; SONG Jun-Qiang; LI Juan; CAI Qun

    2011-01-01

    Erbium silicide nanowires are self-assembled on vicinal Si(Ool) substrates after electron beam evaporation and post annealing at 63(fC In-situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged. Meanwhile, a structural transition from hexagonal AIB2 phase to tetragonal ThSi'2 phase is revealed with high-resolution transmission electron microscopy. It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires. Additionally, a multiple deposition-annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.%@@ Erbium silicide nanowires are self-assembled on vicinal Si(001) substrates after electron beam evaporation and post annealing at 630℃ In-situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged.Meanwhile, a structural transition from hexagonal AlB phase to tetragonal ThSi phase is revealed with high-resolution transmission electron microscopy.It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires.Additionally, a multiple deposition- annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.

  19. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  20. Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology

    Institute of Scientific and Technical Information of China (English)

    Jiang Yuxi; Li Jiao; Ran Feng; Cao Jialin; Yang Dianxiong

    2009-01-01

    r of the GGNMOS devices under high ESD current stress, and design area-efficient ESD protection circuits to sustain the required ESD level.Optimized layout rules for ESD protection in 0.13-μm silicide CMOS technology are also presented.

  1. Boron-Filled Hybrid Carbon Nanotubes.

    Science.gov (United States)

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  2. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  3. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  4. Spectromicroscopy in Boron Neutron Capture Therapy Research

    Science.gov (United States)

    Gilbert, Benjamin; Redondo, Jose; Andres, Roger; Suda, Takashi; Neumann, Michael; Steen, Steffi; Gabel, Detlef; Mercanti, Delio; Ciotti, Teresa; Perfetti, Paolo; Margaritondo, Giorgio; de Stasio, Gelsomina

    1998-03-01

    The MEPHISTO synchrotron imaging spectromicroscope can analyse ashed cells or tissue sections to reveal the microdistribution of trace elements. MEPHISTO performs core level x-ray absorption spectroscopy with synchrotron radiation, and uses an electron optics system to provide magnified photoelectron images. An application of the MEPHISTO spectromicroscope is in boron neutron capture therapy (BNCT). BNCT is a binary cancer therapy that will selectively destroy cancer cells provided that compounds containing a boron isotope are selectively accumulated in tumor tissue. Important factors for the success of BNCT include the ability to target every cancer cell, and the distribution of boron inside the cell. To investigate the boron distribution in tissue, sections of human glioblastoma containing a BNCT compound, and stained with nickel against a protein found in the nuclei of proliferating (cancer) cells, were studied with MEPHISTO.

  5. High temperature thermoelectric properties of boron carbide

    International Nuclear Information System (INIS)

    Boron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (∼1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200 degrees C) and for preparing n-type materials is discussed

  6. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  7. Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Sabyasachi [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302 (India); Gogurla, Narendar [Department of Physics, Indian Institute of Technology, Kharagpur 721302 (India); Banerji, Pallab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721302 (India); Guha, Prasanta K. [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302 (India); Pramanik, Panchanan, E-mail: pramanik1946@gmail.com [Department of Basic Science, MCKV Institute of Engineering, Howrah, Liluah 711204 (India)

    2015-10-15

    Graphical abstract: - Highlights: • β-FeSi{sub 2} nano-particle was synthesized by reducing with Mg and by diluting with MgO. • XRD profile shows the iron di-silicide phase to be semiconducting β-FeSi{sub 2}. • HRTEM and FESEM images indicate the β-FeSi{sub 2}average particle size to be 60–70 nm. • Absorption, reflectance and PL spectroscopy show band gap to be direct 0.87 eV. • Nano-β-FeSi{sub 2}is p-type with hole density of 4.38 × 10{sup 18} cm{sup −3} and mobility 8.9 cm{sup 2}/V s. - Abstract: Nano-particles of β-FeSi{sub 2} have been synthesized by chemical reduction of a glassy phase of [Fe{sub 2}O{sub 3}, 4SiO{sub 2}] by Mg-metal where MgO is used as diluent to prevent the agglomeration of nano crystallites into micro-particles and also act as a negative catalyst for the formation of other phases. The sample is characterized by XRD, FESEM, HRTEM, EDX, ultra-violet-visible-infrared and PL spectroscopy and electronic properties have been investigated by Hall measurement. XRD profile shows that the synthesized powder consists of purely β-FeSi{sub 2} semiconducting phase. The average crystallite size of β-FeSi{sub 2} is determined to be around 65.4 nm from XRD peaks as well as from FESEM also. The optical absorption and PL spectroscopy shows that synthesized β-FeSi{sub 2} phase is a direct band gap semiconductor with a value of 0.87 eV. Hall measurements show that β-FeSi{sub 2} nano-particles is p-type with hole concentration of 4.38 × 10{sup 18} cm{sup −3} and average hole mobility of 8.9 cm{sup 2}/V s at 300 K.

  8. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    Science.gov (United States)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  9. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  10. Lithium-Beryllium-Boron : Origin and Evolution

    OpenAIRE

    Vangioni-Flam, Elisabeth; Casse, Michel; Audouze, Jean

    1999-01-01

    The origin and evolution of Lithium-Beryllium-Boron is a crossing point between different astrophysical fields : optical and gamma spectroscopy, non thermal nucleosynthesis, Big Bang and stellar nucleosynthesis and finally galactic evolution. We describe the production and the evolution of Lithium-Beryllium-Boron from Big Bang up to now through the interaction of the Standard Galactic Cosmic Rays with the interstellar medium, supernova neutrino spallation and a low energy component related to...

  11. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  13. Inheritance of Boron Efficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    SHI Lei; WANG Yun-Hua; NIAN Fu-Zhao; LU Jian-Wei; MENG Jin-Ling; XU Fang-Sen

    2009-01-01

    Field experiments were conducted to study the inheritance of boron efficiency in oilseed rape (Brassica napus L.) by evaluating the boron (B) efficiency coefficient (BEC,the ratio of the seed yield at below the critical boron level to that at the boron-sufficient level) with 657 F2:3 fines of a population derived from a cross between a B-efficient cultivar,Qingyou 10,and a B-inefficient cultivar,Bakow.Qingyou i0 had high BEC as well as high seed yield at low available soil B.On the contrary,Bakow produced low seed yield at low B status.Boron deficiency decreased the seed yield of the F2:3 lines to different extents and the distribution of BEC of the population showed a bimodal pattern.When the 657 F2:3 lines were grouped into B-efficient lines and B-inefficient lines according to their BEC,the ratio of B-efficient lines to B-inefficient lines fitted the expected ratio (3:1),indicating that one major gene controlled the B-efficiency trait.127 F2:3 lines selected from the population at random,with distribution of BEC similar to that of the overall population,were used to identify the target region for fine mapping of the boron efficiency gene.

  14. Boronization of Russian tokamaks from carborane precursors

    International Nuclear Information System (INIS)

    A new and cheap boronization technique using the nontoxic and nonexplosive solid substance carborane has been developed and successfully applied to the Russian tokamaks T-11M, T-3M, T-10 and TUMAN-3. The glow discharge in a mixture of He and carborane vapor produced the amorphous B/C coating with the B/C ratio varied from 2.0-3.7. The deposition rate was about 150 nm/h. The primary effect of boronization was a significant reduction of the impurity influx and the plasma impurity contamination, a sharp decrease of the plasma radiated power, and a decrease of the effective charge. Boronization strongly suppressed the impurity influx caused by additional plasma heating. ECR- and ICR-heating as well as ECR current drive were more effective in boronized vessels. Boronization resulted in a significant extension of the Ne- and q-region of stable tokamak operation. The density limit rose strongly. In Ohmic H-mode energy confinement time increased significantly (by a factor of 2) after boronization. It rose linearly with plasma current Ip and was 10 times higher than Neo-Alcator time at maximum current. ((orig.))

  15. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 105 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  16. Synthesis and properties of low-carbon boron carbides

    International Nuclear Information System (INIS)

    This paper reports on the production of boron carbides of low carbon content (3 and CCl4 at 1273-1673 K in a chemical vapor deposition (CVD) reactor. Transmission electron microscopy (TEM) revealed that phase separation had occurred, and tetragonal boron carbide was formed along with β-boron or α-boron carbide under carbon-depleted gas-phase conditions. At temperatures greater than 1390 degrees C, graphite substrates served as a carbon source, affecting the phases present. A microstructure typical of CVD-produced α-boron carbide was observed. Plan view TEM of tetragonal boron carbide revealed a blocklike structure

  17. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    Science.gov (United States)

    Gilbert, B.; Redondo, J.; Baudat, P.-A.; Lorusso, G. F.; Andres, R.; Van Meir, E. G.; Brunet, J.-F.; Hamou, M.-F.; Suda, T.; Mercanti, Delio; Ciotti, M. Teresa; Droubay, T. C.; Tonner, B. P.; Perfetti, P.; Margaritondo, M.; DeStasio, Gelsomina

    1998-10-01

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of ? in tumour cells after injection of a boron compound (in our case ?, or BSH). With the Mephisto (microscope à emission de photoélectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy.

  18. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, B.; Redondo, J.; Baudat, P-A. [Institut de Physique Appliquee, Ecole Polytechnique Federale, Lausanne (Switzerland)] [and others

    1998-10-07

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of {sup 10}B in tumour cells after injection of a boron compound (in our case B{sub 12}H{sub 11}SH, or BSH). With the Mephisto (microscope a emission de photoelectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy. (author)

  19. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  20. The energy landscape of fullerene materials: a comparison between boron, boron-nitride and carbon

    CERN Document Server

    De, Sandip; Amsler, Maximilian; Pochet, Pascal; Genovese, Luigi; Goedecker, Stefan

    2010-01-01

    Using the minima hopping global geometry optimization method on the density functional potential energy surface we study medium size and large boron clusters. Even though for isolated medium size clusters the ground state is a cage like structure they are unstable against external perturbations such as contact with other clusters. The energy landscape of larger boron clusters is glass like and has a large number of structures which are lower in energy than the cages. This is in contrast to carbon and boron nitride systems which can be clearly identified as structure seekers in our minima hopping runs. The differences in the potential energy landscape explain why carbon and boron nitride systems are found in nature whereas pure boron fullerenes have not been found.

  1. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  2. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-10-22

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

  3. Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

    Science.gov (United States)

    Gelbstein, Yaniv; Tunbridge, Jonathan; Dixon, Richard; Reece, Mike J.; Ning, Huanpo; Gilchrist, Robert; Summers, Richard; Agote, Iñigo; Lagos, Miguel A.; Simpson, Kevin; Rouaud, Cedric; Feulner, Peter; Rivera, Sergio; Torrecillas, Ramon; Husband, Mark; Crossley, Julian; Robinson, Ivan

    2014-06-01

    Cost-effective highly efficient nanostructured n-type Mg2Si1- x Sn x and p-type higher manganese silicide (HMS) compositions were prepared for the development of practical waste heat generators for automotive and marine thermoelectric applications, in the frame of the European Commission (EC)-funded PowerDriver project. The physical, mechanical, and structural properties were fully characterized as part of a database-generation exercise required for the thermoelectric converter design. A combination of high maximal ZT values of ˜0.6 and ˜1.1 for the HMS and Mg2Si1- x Sn x compositions, respectively, and adequate mechanical properties was obtained.

  4. Theoretical investigation of superconductivity in ternary silicide NaAlSi with layered diamond-like structure

    Science.gov (United States)

    Tütüncü, H. M.; Karaca, Ertuǧrul; Srivastava, G. P.

    2016-04-01

    We have investigated the electronic structure, phonon modes and electron-phonon coupling to understand superconductivity in the ternary silicide NaAlSi with a layered diamond-like structure. Our electronic results, using the density functional theory within a generalized gradient approximation, indicate that the density of states at the Fermi level is mainly governed by Si p states. The largest contributions to the electron-phonon coupling parameter involve Si-related vibrations both in the x-y plane as well as along the z-axis in the x-z plane. Our results indicate that this material is an s-p electron superconductor with a medium level electron-phonon coupling parameter of 0.68. Using the Allen-Dynes modification of the McMillan formula we obtain the superconducting critical temperature of 6.98 K, in excellent agreement with experimentally determined value of 7 K.

  5. Boron remobilization at low boron supply in olive (Olea europaea) in relation to leaf and phloem mannitol concentrations.

    Science.gov (United States)

    Liakopoulos, Georgios; Stavrianakou, Sotiria; Filippou, Manolis; Fasseas, Costas; Tsadilas, Christos; Drossopoulos, Ioannis; Karabourniotis, George

    2005-02-01

    For plant species in which a considerable portion of the photoassimilates are translocated in the phloem as sugar alcohols, boron is freely translocated from mature organs to growing tissues. However, the effects of decreased plant boron status on boron remobilization are poorly understood. We conducted a growth chamber experiment (CE) and a field experiment (FE) to study the effects of low boron supply on boron remobilization in olive (Olea europaea L.), a species that transports considerable amounts of mannitol in the phloem. For the CE, several physiological parameters were compared between control (B+) and boron-deficient olive plants (B-) during the expansion of new leaves. Boron remobilization was assessed by measuring boron content of selected leaves at the beginning and at the end of the CE. As expected, boron was remobilized from mature leaves to young leaves of B+ plants; however, considerable boron remobilization was also observed in B- plants, suggesting a mechanism whereby olive can sustain a minimum boron supply for growth of new tissues despite an insufficient external boron supply. Boron deficiency caused inhibition of new growth but had no effect on photosynthetic capacity per unit leaf surface area of young and mature leaves, thereby altering the carbon utilization pattern and resulting in carbon allocation to structures within the source leaves and accumulation of soluble carbohydrates. Specifically, in mature B- leaves in the CE and in B- leaves in the FE, mannitol concentration on a leaf water content basis increased by 48 and 27% respectively, compared with controls. Carbon export ability (assessed by both phloem anatomy and phloem exudate composition of FE leaves) was enhanced at low boron supply. We conclude that, at low boron supply, increased mannitol concentrations maintain boron remobilization from source leaves to boron-demanding sink leaves. PMID:15574397

  6. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  7. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  8. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  9. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P2O5) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  10. First gaseous boronization during pulsed discharge cleaning

    Science.gov (United States)

    Ko, J.; Den Hartog, D. J.; Goetz, J. A.; Weix, P. J.; Limbach, S. T.

    2013-01-01

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C2B10H12) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  11. First gaseous boronization during pulsed discharge cleaning

    Energy Technology Data Exchange (ETDEWEB)

    Ko, J., E-mail: jinseok@nfri.re.kr [Department of Physics, University of Wisconsin, Madison, WI (United States); Den Hartog, D.J.; Goetz, J.A.; Weix, P.J.; Limbach, S.T. [Department of Physics, University of Wisconsin, Madison, WI (United States)

    2013-01-15

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C{sub 2}B{sub 10}H{sub 12}) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  12. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 4th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 24 in 1992. First, clinical experiences of BNCT in the Kyoto University Research Reactor in 1992 were briefly reported. Then, the killing effects of boron cluster-containing nucleic acid precursors on tumor cells were shown (Chap. 2). The various trials of the optical resolution of B-p-boronophenylalanine for neutron capture therapy were made (Chap. 3). The borate-dextran gel complexes were investigated by the nuclear magnetic resonance spectroscopy. The stability constants of borate complexes were listed, and are useful in the solution chemistry of boron compounds (Chap. 4). The interactions between boron compounds and biological materials were studied by the paper electrophoresis which had been developed by us (Chap. 5). Molecular design of boron-10 carriers and their organic synthesis were reported (Chap. 6). Carborane-containing aziridine boron carriers which were directed to the DNA alkylation were synthesized and their cancer cell killing efficacies were tested (Chap. 7). The solution chemistry of deuterium oxide which is a good neutron moderator was reported, relating to the BNCT (Chap. 8). (author)

  13. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2010-01-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  14. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    Directory of Open Access Journals (Sweden)

    Yuya Egawa

    2014-02-01

    Full Text Available In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conjugated azobenzenes have been synthesized. There are several types of boronic acid azobenzenes, and their characteristics tend to rely on the substitute position of the boronic acid moiety. For example, o-substitution of boronic acid to the azo group gives the advantage of a significant color change upon sugar addition. Nitrogen-15 Nuclear Magnetic Resonance (NMR studies clearly show a signaling mechanism based on the formation and cleavage of the B–N dative bond between boronic acid and azo moieties in the dye. Some boronic acid-substituted azobenzenes were attached to a polymer or utilized for supramolecular chemistry to produce glucose-selective binding, in which two boronic acid moieties cooperatively bind one glucose molecule. In addition, boronic acid-substituted azobenzenes have been applied not only for glucose monitoring, but also for the sensing of glycated hemoglobin and dopamine.

  15. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  16. Probing Field Emission from Boron Carbide Nanowires

    Institute of Scientific and Technical Information of China (English)

    TIAN Ji-Fa; GAO Hong-Jun; BAO Li-Hong; WANG Xing-Jun; HUI Chao; LIU Fei; LI Chen; SHEN Cheng-Min; WANG Zong-Li; GU Chang-Zhi

    2008-01-01

    High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.

  17. Enhanced Plasma Performance by ICRF Boronization

    Institute of Scientific and Technical Information of China (English)

    万宝年; 赵燕平; 李建刚; 宋梅; 吴振伟; 罗家融; 李成富; 王小明

    2002-01-01

    Boronization with carborane (C2B10H12) by ICRF has been applied routinely to the walls of HT-7 super-conducting tokamak for the reduction of impurity influx, especially carbon and oxygen. Significant suppression of metallic impurities and radiating power fraction are achieved. The improved confinement for both particle and energy is observed in full range of operation parameters. Energy balance analysis shows that electron heat diffusion coefficient is strongly reduced. Measurements by Langmuir probes at the edge plasma show that the poloidal velocity shear after boronization is changed to a profile favoring to good confinement. The main emphasis of this paper is to describe effects of boronization on aspects of the enhanced plasma performance.

  18. Depth resolved investigations of boron implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sztucki, M. E-mail: michael@sztucki.de; Metzger, T.H.; Milita, S.; Berberich, F.; Schell, N.; Rouviere, J.L.; Patel, J

    2003-01-01

    We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6x10{sup 15} ions/cm{sup -2} at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {l_brace}1 1 1{r_brace} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

  19. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water.

  20. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    NARCIS (Netherlands)

    Mohammadi, V.; Nihtianov, S.

    2016-01-01

    The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and co

  1. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  2. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-01-01

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

  3. Computational Aspects of Carbon and Boron Nanotubes

    Directory of Open Access Journals (Sweden)

    Paul Manuel

    2010-11-01

    Full Text Available Carbon hexagonal nanotubes, boron triangular nanotubes and boron a-nanotubes are a few popular nano structures. Computational researchers look at these structures as graphs where each atom is a node and an atomic bond is an edge. While researchers are discussing the differences among the three nanotubes, we identify the topological and structural similarities among them. We show that the three nanotubes have the same maximum independent set and their matching ratios are independent of the number of columns. In addition, we illustrate that they also have similar underlying broadcasting spanning tree and identical communication behavior.

  4. I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction

    Institute of Scientific and Technical Information of China (English)

    Zhu Shi-Yang; Ru Guo-Ping; Zhou Jia; Huang Yi-Ping

    2005-01-01

    The current-voltage (I-V) characteristics of Ni silicide/n-Si(100) contacts, which were formed from solid-state reaction of Ni-Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I-V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A doubleSchottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I-V curves,from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.

  5. Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μl) microbial fuel cell

    KAUST Repository

    Mink, Justine E.

    2012-02-08

    Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m 2 of current density and 392 mW/m 3 of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society.

  6. Direct evidence of metallic bands in a monolayer boron sheet

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Liu, Ro-Ya; Iimori, Takushi; Lian, Chao; Li, Hui; Chen, Lan; Wu, Kehui; Meng, Sheng; Komori, Fumio; Matsuda, Iwao

    2016-07-01

    The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the β12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S ¯ point and a pair of hole pockets near the X ¯ point, which is supported by the first-principles calculations. The metallic boron allotrope in β12 sheet opens the way to novel physics and chemistry in material science.

  7. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing; Comportement du silicium en milieu nitrique. Application au retraitement des combustibles siliciures d'uranium

    Energy Technology Data Exchange (ETDEWEB)

    Cheroux, L

    2001-07-01

    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  8. Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

    Science.gov (United States)

    Molnár, G.; Dózsa, L.; Erdélyi, R.; Vértesy, Z.; Osváth, Z.

    2015-12-01

    Epitaxial iron silicide nanostructures are grown by solid phase epitaxy on Si(0 0 1) and Si(1 1 1), and by reactive deposition epitaxy on Si(0 0 1) substrates. The formation process is monitored by reflection high-energy electron diffraction. The morphology, size, and electrical properties of the nanoparticles are investigated by scanning electron microscopy, by electrically active scanning probe microscopy, and by confocal Raman spectroscopy. The results show that the shape, size, orientation, and density of the nanoobjects can be tuned by self-assembly, controlled by the lattice misfit between the substrates and iron silicides. The size distribution and shape of the grown nanoparticles depend on the substrate orientation, on the initial thickness of the evaporated iron, on the temperature and time of the annealing, and on the preparation method. The so-called Ostwald ripening phenomena, which state that the bigger objects develop at the expense of smaller ones, controls the density of the nanoparticles. Raman spectra show the bigger objects do not contain β-FeSi2 phase. The different shape nanoparticles exhibit small, about 100 mV barrier compared to the surrounding silicon. The local leakage current of the samples measured by conductive AFM using a Pt coated Si tip is localized in a few nanometers size sites, and the sites which we assume are very small silicide nanoparticles or point defects.

  9. Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen, E-mail: jstsay@phy.ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

    2015-05-07

    Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure, and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.

  10. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  11. Relationship Between Soil Boron Adsorption Kinetics and Rape Plant Boron Response

    Institute of Scientific and Technical Information of China (English)

    ZHUDUANWEI; PIMEIMEI; 等

    1997-01-01

    The boron adsorption kinetic experiment in soil by means a flow displacement technique showed that the kinetic data could be described with some mathematic equations.The average values of the coorealtion coefficeint for zero-order,first-order,parabolic diffusion ,Elovich,power function and eponential equations were 0.957,0.982,0.981,0.984,0.981 and 0.902 ,respectively,The correlation between adsorbed boron or its other expression form and time were the highest for first-order ,parabloic diffusion Elovich,and pwer function equations,the second for the zeroorder equation,and the tlowest for the exponential equation.The parabloic diffusion equation fitted well the expermiental results,with the least standard error among the six kinetic equation,showing that the monvemetn of boron from soil solution to soil colloid surface may be controlled by boron diffusion speed.The boron content of rape seedling obtained from soil cultvation was correlated with the rate constants of the kinetic equations.The constants of first-order ,parabloic diffusion,and exponential equaitions were significanlty correlated with the boron content of the crop of NPK treatment at a 95% probaility level ,with correation coeffecients being 0.686,0.691 and 0.64 and 0.641,respectively.In the case of zero-order equation,it Was significant at 99% probability level(r=0.736),These results showed that the adsorption kinetic constants of soil boron were closely related with the rape plant response to boron.

  12. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  13. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na210B12H11SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author)

  14. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  15. Effects of boron number per unit volume on the shielding properties of composites made with boron ores form China

    International Nuclear Information System (INIS)

    The total macroscopic removal cross sections, deposited energies and the absorbed doses of three new shielding composites loaded with specific boron-rich slag, boron concentrate ore and boron mud of China for 252Cf neutron source were investigated by experimental and Monte Carlo calculation. The results were evaluated by boron mole numbers per unit volume in composites. The half value layers of the composites were calculated and compared with that of Portland concrete, indicating that ascending boron mole numbers per unit volume in the composites can enhance the shielding properties of the composites for 252Cf neutron source. (authors)

  16. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    Energy Technology Data Exchange (ETDEWEB)

    Ozdemir, Ozkan Emre, E-mail: ozdemir@psu.edu; Avramova, Maria N., E-mail: mna109@psu.edu

    2014-10-15

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis.

  17. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    International Nuclear Information System (INIS)

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis

  18. Synthesis and evaluation of boron folates for Boron-Neutron-Capture-Therapy (BNCT)

    Energy Technology Data Exchange (ETDEWEB)

    Kettenbach, Kathrin; Schieferstein, Hanno; Grunewald, Catrin; Hampel, Gabriele; Schuetz, Christian L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Iffland, Dorothee; Bings, Nicolas H. [Mainz Univ. (Germany). Inst. of Inorganic Chemistry and Analytical Chemistry; Reffert, Laura M. [Hannover Medical School (Germany). Radiopharmaceutical Chemistry; Ross, Tobias L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Hannover Medical School (Germany). Radiopharmaceutical Chemistry

    2015-07-01

    Boron neutron capture therapy (BNCT) employs {sup 10}B-pharmaceuticals administered for the treatment of malignancies, and subsequently irradiated with thermal neutrons. So far, clinical established pharmaceuticals like boron phenylalanine (BPA) or sodium boron mercaptate (BSH) use imperfect (BPA) or passive (BSH) targeting for accumulation at target sites. Due to the need of a selective transportation of boron drugs into cancer cells and sparing healthy tissues, we combined the BNCT approach with the specific and effective folate receptor (FR) targeting concept. The FR is overexpressed on many human carcinomas and provides a selective and specific target for molecular imaging as well as for tumor therapy. We synthesized and characterized a carborane-folate as well as a BSH-folate to study their in vitro characteristics and their potential as new boron-carriers for BNCT. Uptake studies were carried out using human KB cells showing a significant increase of the boron content in cells and demonstrating the successful combination of active FR-targeting and BNCT.

  19. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst. PMID:18961131

  20. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst.

  1. Coadsorption of lanthanum with boron and gadolinium with boron on Mo(1 1 0)

    Science.gov (United States)

    Magkoev, Tamerlan T.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-05-01

    Submonolayer to multilayer coadsorption of lanthanum (La) with boron (B) and gadolinium (Gd) with boron on the surface of Mo(1 1 0) has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and work function ( ϕ) measurements. The equilibrium state of double adsorbate systems achieved either by adsorption of rare-earth metal (REM) on boron precovered Mo(1 1 0) surface held at room temperature or after moderate annealing of the system with opposite order of adsorption (B on REM films) is the layer which is the inhomogeneous mixture of boron and REM atoms with preferential concentration of boron in the surface area of the mixed film. The work function of such films even at REM to boron concentration ratio much higher than 1/6 are very close to the values of corresponding bulk LaB 6 and GdB 6, favoring assumption of surface rearrangement as the dominant reason of high electron emission efficiency of hexaborides. Almost total similarity of the results for La-B and Gd-B systems can be viewed as the consequence of weak participation of Gd f-electrons in determining the thermionic properties of corresponding double layers.

  2. The investigation of physical conditions of boron uptake region in proton boron fusion therapy (PBFT

    Directory of Open Access Journals (Sweden)

    Joo-Young Jung

    2016-09-01

    Full Text Available We conducted a quantitative study to identify the effectiveness of proton boron fusion therapy (PBFT. Four simulation scenarios were designed to investigate the escalation in total dose with the proton boron reaction using a Monte Carlo n-particle extended (MCNPX 2.6.0 simulation. The peak integrated dose was obtained for three different physical conditions (i.e., boron uptake region (BUR thickness, BUR location, and boron concentration with differing proton beam energy (60–90 MeV. We found that the peak integrated dose was increased by up to 96.62% compared to the pristine proton Bragg-peak. For the synergetic effect to take place with 60–70 MeV proton beam, the BUR had to be at least 0.3 cm thick while spanning the Bragg-peak. Similarly to the thickness, the BUR location needed to be within 0.3 cm from the Bragg-peak when the thickness was maintained at 0.9 cm. An effective proton boron reaction required the boron concentration to be equal to or greater than 14.4 mg/g. These results demonstrate the impact of various physical and beam conditions of the PBFT, which are critical environmental factors for the treatment planning. We envision that this study will advance our understanding of the PBFT, which can be an invaluable treatment method for maximizing the potential of proton therapy.

  3. Novel Boron Based Multilayer Thermal Neutron Detector

    CERN Document Server

    SCHIEBER, M

    2010-01-01

    The detector contains four or more layers of natural Boron absorbing thermal neutrons. Thickness of a layer is 0.4 - 1.2 mg/cm2. The layers are deposited on one or on both sides of a metal surface used as contacts. Between the absorbing layers there are gas-filled gaps 3 - 6 mm thick. Electric field of 100 - 200 V/cm is applied to the gas-filled gaps. Natural Boron contains almost 20% of 10B isotope. When atoms of 10B capture a thermal neutron, nuclear reaction occurs, as a result of which two heavy particles - alpha particle and ion 7Li - from the thin absorber layer are emitted in opposing sides. One of the two particles penetrates into gas-filled gap between Boron layers and ionizes the gas. An impulse of electric current is created in the gas-filled gap actuated by the applied electric field. The impulse is registered by an electronic circuit. We have made and tested detectors containing from two to sixteen layers of natural Boron with an efficiency of thermal neutron registration from 2.9% to 12.5% accor...

  4. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  5. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  6. Trapping and Sympathetic Cooling of Boron Ions

    CERN Document Server

    Rugango, Rene; Shu, Gang; Brown, Kenneth R

    2016-01-01

    We demonstrate the trapping and sympathetic cooling of B$^{+}$ ions in a Coulomb crystal of laser-cooled Ca$^{+}$, We non-destructively confirm the presence of the both B$^+$ isotopes by resonant excitation of the secular motion. The B$^{+}$ ions are loaded by ablation of boron and the secular excitation spectrum also reveals features consistent with ions of the form B$_{n}^{+}$.

  7. NEW ADVANCES IN BORON SOIL CHEMISTRY - Paper

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  8. Compaction of amorphous iron–boron powder

    DEFF Research Database (Denmark)

    Hendriksen, Peter Vang; Mørup, Steen; Koch, Christian;

    1993-01-01

    report on attempts to compact amorphous iron–boron particles prepared by chemical reduction of Fe(II) ions in aqueous solution by NaBH4 (Ref. 2). The particles prepared in this way are pyrophoric, but can be passivated. The small particle size (10–100 nm), characteristic of this preparation technique...

  9. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  10. Pechmann Reaction Promoted by Boron Trifluoride Dihydrate

    Directory of Open Access Journals (Sweden)

    J. Mezger

    2005-08-01

    Full Text Available The Pechmann reaction of substituted phenols 1a-e with methyl acetoacetate (2 can be activated by boron trifluoride dihydrate (3 to give the corresponding 4-methyl- coumarin derivatives 4a-e in excellent yield (98-99 %.

  11. Investigating the Boron Requirement of Plants.

    Science.gov (United States)

    Bohnsack, Charles W.

    1991-01-01

    This article describes a simple and rapid method for using summer squash to investigate born deficiency in plants. Author asserts that students are likely to feel challenged by laboratory exercises and projects that focus on the role boron plays in plant growth because it is an unresolved problem in biology. (PR)

  12. BCM6: New Generation of Boron Meter

    International Nuclear Information System (INIS)

    Full text of publication follows: Rolls-Royce has developed a new generation of boron meter, based on more than 30 years of experience. The Rolls-Royce BCM6 boron meter provides Nuclear Power Plant (NPP) operators with the boron concentration of the primary circuit. The meter provides continuous and safe measurements with no manual sampling and no human contact. In this paper, technical features, advantages and customer benefits of the use of the new generation of Rolls-Royce BCM6 boron meter will be detailed. Values and associated alarms are provides over different media: 4-20 mA outputs, relays, displays in the main control room and in the chemical lab, and digital links. A special alarm avoids unexpected homogeneous dilution of the primary circuit, which is a critical operational parameter. The Rolls-Royce BCM6 boron meter is fully configurable over a set of parameters allowing adaptation to customer needs. It has a differential capability, thus eliminating neutronic noise and keeping measurements accurate, even in the case of fuel clad rupture. Measurements are accurate, reliable, and have a quick response time. Equipment meets state-of-the-art qualification requests. Designed in 2008, the BCM6 boron meter is the newest equipment of Rolls-Royce boron meters product line. It has been chosen to equip the French EPR NPP and complies with the state-of-the-art of the technology. Rolls-Royce has more than 30 years of experience in Instrumentation and Controls with more than 75 NPP units operating worldwide. All of this experience return has been put in this new generation of equipment to provide the customer with the best operation. About Rolls-Royce Rolls-Royce is a global business providing integrated power systems for use on land, at sea and in the air. The Group has a balanced business portfolio with leading market positions. Rolls-Royce has a broad range of civil nuclear expertise, including work related to licensing and safety reviews, engineering design

  13. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  14. Boron removal from aqueous solution by direct contact membrane distillation

    International Nuclear Information System (INIS)

    The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 μg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution.

  15. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  16. Production Cycle for Large Scale Fission Mo-99 Separation by the Processing of Irradiated LEU Uranium Silicide Fuel Element Targets

    Directory of Open Access Journals (Sweden)

    Abdel-Hadi Ali Sameh

    2013-01-01

    Full Text Available Uranium silicide fuels proved over decades their exceptional qualification for the operation of higher flux material testing reactors with LEU elements. The application of such fuels as target materials, particularly for the large scale fission Mo-99 producers, offers an efficient and economical solution for the related facilities. The realization of such aim demands the introduction of a suitable dissolution process for the applied U3Si2 compound. Excellent results are achieved by the oxidizing dissolution of the fuel meat in hydrofluoric acid at room temperature. The resulting solution is directly behind added to an over stoichiometric amount of potassium hydroxide solution. Uranium and the bulk of fission products are precipitated together with the transuranium compounds. The filtrate contains the molybdenum and the soluble fission product species. It is further treated similar to the in-full scale proven process. The generated off gas stream is handled also as experienced before after passing through KOH washing solution. The generated alkaline fluoride containing waste solution is noncorrosive. Nevertheless fluoride can be selectively bonded as in soluble CaF2 by addition of a mixture of solid calcium hydroxide calcium carbonate to the sand cement mixture used for waste solidification. The generated elevated amounts of LEU remnants can be recycled and retargeted. The related technology permits the minimization of the generated fuel waste, saving environment, and improving processing economy.

  17. Crystal Structure and Thermoelectric Properties of Lightly Vanadium-Substituted Higher Manganese Silicides (Mn1-x V x )Si γ )

    Science.gov (United States)

    Miyazaki, Yuzuru; Hamada, Haruki; Hayashi, Kei; Yubuta, Kunio

    2016-09-01

    To further enhance the thermoelectric (TE) properties of higher manganese silicides (HMSs), dissipation of layered precipitates of MnSi phase as well as optimization of hole carrier concentration are critical. We have prepared a lightly vanadium-substituted solid solution of HMS, (Mn1-x V x )Si γ , by a melt growth method. A 2% substitution of manganese with vanadium is found to dissipate MnSi precipitates effectively, resulting in a substantial increase in the electrical conductivity from 280 S/cm to 706 S/cm at 800 K. The resulting TE power factor reaches 2.4 mW/K2-m at 800 K, more than twice that of the V-free sample. The total thermal conductivity did not change significantly with increasing x owing to a reduction of the lattice contribution. As a consequence, the dimensionless figure of merit zT of the melt-grown samples increased from 0.26 ± 0.01 for x = 0 to 0.59 ± 0.01 for x = 0.02 at around 800 K.

  18. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  19. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.F.; Lin, S.Y. [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China); Peir, J.J. [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China); Liao, J.W. [Graduate Institute of Veterinary Pathobiology, National Chung Hsing University, Taiwan (China); Lin, Y.C. [Department of Veterinary Medicine, National Chung Hsing University, Taiwan (China); Chou, F.I., E-mail: fichou@mx.nthu.edu.tw [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China)] [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China)

    2011-12-15

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 {mu}g {sup 10}B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague-Dawley (SD) rats were studied by administrating 25 mg {sup 10}B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4-6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  20. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    International Nuclear Information System (INIS)

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 μg 10B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague–Dawley (SD) rats were studied by administrating 25 mg 10B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4–6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  1. Boron Rich Solids Sensors, Ultra High Temperature Ceramics, Thermoelectrics, Armor

    CERN Document Server

    Orlovskaya, Nina

    2011-01-01

    The objective of this book is to discuss the current status of research and development of boron-rich solids as sensors, ultra-high temperature ceramics, thermoelectrics, and armor. Novel biological and chemical sensors made of stiff and light-weight boron-rich solids are very exciting and efficient for applications in medical diagnoses, environmental surveillance and the detection of pathogen and biological/chemical terrorism agents. Ultra-high temperature ceramic composites exhibit excellent oxidation and corrosion resistance for hypersonic vehicle applications. Boron-rich solids are also promising candidates for high-temperature thermoelectric conversion. Armor is another very important application of boron-rich solids, since most of them exhibit very high hardness, which makes them perfect candidates with high resistance to ballistic impact. The following topical areas are presented: •boron-rich solids: science and technology; •synthesis and sintering strategies of boron rich solids; •microcantileve...

  2. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-01

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

  3. Measurement of boron isotopes by negative thermal ionization mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The isobaric interference for boron isotopic measurement by negative thermal ionization mass spectrometry (NTIMS) has been studied. The result shows that the CNO- is not only from the organic material, but also from nitrate in loading reagent in NTIMS. Monitoring the mass 43 ion intensity and 43/42 ratio of blank are also necessary for the boron isotopic measurement by NTIMS, other than is only boron content.

  4. Successive Boronizing and Austempering for GGG-40 Grade Ductile Iron

    Institute of Scientific and Technical Information of China (English)

    Murat Baydogan; Seckin Izzet Akray

    2009-01-01

    Boronizing and austempering were successively applied to a GGG-40 grade ductile iron in order to combine the advantages of both process in a single treatment. This new procedure formed a 30 μm thick boride layer on the surface with subsurface matrix structure consisted of acicular ferrite and retained austenite. Reciprocating wear tests showed that successive boronizing and austempering exhibited considerably higher wear resistance than conventional boronizing having a subsurface matrix structure consisting of ferrite and pearlite.

  5. Apparatus for the production of boron nitride nanotubes

    Science.gov (United States)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  6. Characterization of boron doped nanocrystalline diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/{mu}m range.

  7. Behavior of disordered boron carbide under stress.

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W; Chhowalla, Manish

    2006-07-21

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately = P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2-3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  8. The spectrophotometric determination of boron in tourmalines

    Directory of Open Access Journals (Sweden)

    LJILJANA JAKSIC

    2005-02-01

    Full Text Available A procedure for the spectrophotometric determination of macro amounts of boron in tourmaline with azomethine H is described. The used tourmaline concentrate was obtained by magnetic separation and heavy-liquids purification of the schorl zone of pegmatite or granite aplite. The samples of tourmaline were decomposed by fusion with anhydrous sodium carbonate and taken up in dilute hydrochloric acid. The interfering effects of iron and aluminium were eliminated by masking with an EDTA – NTA solution. After pH adjustment, the boron was reacted with azomethine H and the absorbance of the obtained coloured complex was measured at 415 nm. The results are compared with those obtained by other procedures. The relative error of the determination was less than 3 %.

  9. Techniques for increasing boron fiber fracture strain

    Science.gov (United States)

    Dicarlo, J. A.

    1977-01-01

    Improvement in the strain-to-failure of CVD boron fibers is shown possible by contracting the tungsten boride core region and its inherent flaws. The results of three methods are presented in which etching and thermal processing techniques were employed to achieve core flaw contraction by internal stresses available in the boron sheath. After commercially and treatment induced surface flaws were removed from 203 micrometers (8 mil) fibers, the core flaw was observed to be essentially the only source of fiber fracture. Thus, fiber strain-to-failure was found to improve by an amount equal to the treatment induced contraction on the core flaw. Commercial feasibility considerations suggest as the most cost effective technique that method in which as-produced fibers are given a rapid heat treatment above 700 C. Preliminary results concerning the contraction kinetics and fracture behavior observed are presented and discussed both for high vacuum and argon gas heat treatment environments.

  10. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  11. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  12. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  13. Multidimensional boron transport modeling in subchannel approach

    International Nuclear Information System (INIS)

    The main objective of this study is to implement a solute tracking model into the subchannel code CTF for simulations of boric acid transients. Previously, three different boron tracking models have been implemented into CTF and based on the applied analytical and nodal sensitivity studies the Modified Godunov Scheme approach with a physical diffusion term has been selected as the most accurate and best estimate solution. This paper will present the implementation of a multidimensional boron transport modeling with Modified Godunov Scheme within a thermal-hydraulic code based on a subchannel approach. Based on the cross flow mechanism in a multiple-subchannel rod bundle geometry, heat transfer and lateral pressure drop effects will be discussed in deboration and boration case studies. (author)

  14. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  15. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  16. Functionalized boron-dipyrromethenes and their applications

    OpenAIRE

    M. Ravikanth, M; Vellanki,Lakshmi; Sharma,Ritambhara

    2016-01-01

    Vellanki Lakshmi, Ritambhara Sharma, Mangalampalli Ravikanth Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, IndiaAbstract: Boron-dipyrromethenes/BF2-dipyrrins (BODIPYs) are highly fluorescent dyes with a wide range of applications in various fields because of their attractive photophysical properties. One of the salient features of BODIPYs is that the properties of the BODIPY can be fine-tuned at will by selectively introducing the substituent(s) at the desired locati...

  17. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  18. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU

    2005-01-01

    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  19. Boron Nitride Nanosheets for Metal Protection

    OpenAIRE

    Li, Lu Hua; Xing, Tan; Chen, Ying; Jones, Rob

    2015-01-01

    Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insu...

  20. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  1. Clinical aspects of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy is potentially useful in treating malignant tumors of the central nervous system and is technically possible. Additional in vitro and in vivo testing is required to determine toxicities, normal tissue tolerances and tissue responses to treatment parameters. Adequate tumor uptake of the capture agent can be evaluated clinically prior to implementation of a finalized treatment protocol. Phase I and Phase II protocol development, clinical pharmacokinetic studies and neutron beam development

  2. Dosage of boron traces in graphite, uranium and beryllium oxide

    International Nuclear Information System (INIS)

    The problem of the dosage of the boron in the materials serving to the construction of nuclear reactors arises of the following way: to determine to about 0,1 ppm close to the quantities of boron of the order of tenth ppm. We have chosen the colorimetric analysis with curcumin as method of dosage. To reach the indicated contents, it is necessary to do a previous separation of the boron and the materials of basis, either by extraction of tetraphenylarsonium fluoborate in the case of the boron dosage in uranium and the beryllium oxide, either by the use of a cations exchanger resin of in the case of graphite. (M.B.)

  3. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  4. Boron removal from molten silicon using sodium-based slags

    Institute of Scientific and Technical Information of China (English)

    Yin Changhao; Hu Bingfeng; Huang Xinming

    2011-01-01

    Slag refining,as an important option for boron removal to produce solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si),has attracted increasing attention.In this paper,Na2CO3-SiO2 systems were chosen as the sodium-based refining slag materials for boron removal from molten silicon.Furthermore,the effect of Al2O3 addition for boron removal was studied in detail,which showed that an appropriate amount of Al2O3 can help retention of the basicity of the slags,hence improving the boron removal rate.

  5. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S. [Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

    2016-02-15

    The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

  6. Production process for boron carbide coated carbon material and boron carbide coated carbon material obtained by the production process

    International Nuclear Information System (INIS)

    A boron carbide coated carbon material is used for a plasma facing material of a thermonuclear reactor. The surface of a carbon material is chemically reacted with boron oxide to convert it into boron carbide. Then, it is subjected to heat treatment at a temperature of not lower than 1600degC in highly evacuated or inactive atmosphere to attain a boron carbide coated carbon material. The carbon material used is an artificial graphite or a carbon fiber reinforced carbon composite material. In the heat treatment, when the atmosphere is in vacuum, it is highly evacuated to less than 10Pa. Alternatively, in a case of inactive atmosphere, argon or helium gas each having oxygen and nitrogen content of not more than 20ppm is used. With such procedures, there can be obtained a boron carbide-coated carbon material with low content of oxygen and nitrogen impurities contained in the boron carbide coating membrane thereby hardly releasing gases. (I.N.)

  7. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Relationships between seed yields of oilseed rape (Brassica napus L.) and extractable boron concen- trations in three soil layers (A, P and W) were investigated through ten experiments on three types of soils (Alluvic Entisols, Udic Ferrisols and Stagnic Anthrosols) in northern, western and middle Zhejiang Province. Among several mathematical models used to described the relationships, the polynomial equation, y = a + bx + cx2 + dx3, where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil, was the best one. The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40~0.52 mg kg-1. The extractable boron concentration of the P layers of the soils was the most stable. The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  8. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    WEIYOUZHANG

    2001-01-01

    Relationships between seed yields of oilseed rape(Brassica napus L.) and extractable boron concen-trations in three soil layers(A,P and W) were investigated through ten experiments on three types of soils(Alluvic Entisols,Udic Ferrisols and Sagnic Anthrosols) in northern,Western and middle Zhejing Province.Among several mathematical models used to described the relationships,the polynomial equation,y=a+bx+cx2+dx3,where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil,was the best one.The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40-0.52 mg kg-1,The extractable boron concentration of the P layers of the soils was the most stable,The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  9. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  10. Boron impregnation treatment of Eucalyptus grandis wood.

    Science.gov (United States)

    Dhamodaran, T K; Gnanaharan, R

    2007-08-01

    Eucalyptus grandis is suitable for small timber purposes, but its wood is reported to be non-durable and difficult to treat. Boron compounds being diffusible, and the vacuum-pressure impregnation (VPI) method being more suitable for industrial-scale treatment, the possibility of boron impregnation of partially dry to green timber was investigated using a 6% boric acid equivalent (BAE) solution of boric acid and borax in the ratio 1:1.5 under different treatment schedules. It was found that E. grandis wood, even in green condition, could be pressure treated to desired chemical dry salt retention (DSR) and penetration levels using 6% BAE solution. Up to a thickness of 50mm, in order to achieve a DSR of 5 kg/m(3) boron compounds, the desired DSR level as per the Indian Standard for perishable timbers for indoor use, it was found that neither the moisture content of wood nor the treatment schedule posed any problem as far as the treatability of E. grandis wood was concerned. PMID:17046244

  11. Longitudinal residual stresses in boron fibers

    Science.gov (United States)

    Behrendt, D. R.

    1976-01-01

    A technique is proposed for measuring the longitudinal residual stress distribution in commercial CVD (Chemical Vapor Deposition) boron on tungsten fibers of 102, 142, and 203 microns in diameter. The experimental apparatus is so designed that continuous measurements are made of the length changes of a boron fiber specimen as the surface of the fiber is removed by electropolishing. The effects of surface removal on core residual stress and core-initiated fracture are discussed. The three sizes of boron fibers investigated show similar residual stress distributions, i.e., compressive at the surface, tensile near the core, and for the 102-micron fiber compressive again in the core. It is shown that an increase in UTS is due to the increase in the compressive stress at the core produced by fiber contraction during surface removal. An expression is derived for calculating the longitudinal residual stress at a given radius for an as-received fiber of a certain radius from measurements of the axial strain produced by removal of the surface by electropolishing.

  12. Boron dose enhancement for Cf-252 brachytherapy

    International Nuclear Information System (INIS)

    Full text: Monte Carlo modelling of a Cf-252 source in water and in tissue has shown that there is a significant therapeutic advantage obtained if B-10 is present in the tumour cells. This study analyses the advantage in terms of therapeutic margin, defined as the distance from the border of the treatment volume where boron-loaded tumour cells will receive a therapeutic dose. Calculations were made with MCNP version 4a on a Pentium 60 MHz computer. Large voxel sizes allowed 70 minute runs to achieve statistical uncertainties of 5% or less for 100,000 source neutrons. Later runs with smaller voxels confirmed the accuracy of the initial calculations. Calculations were made for treatment volume radii up to 11 cm and 30 ppm boron-10. The therapeutic margin for radii in the range 3-9 cm is approximately 10% of the tumour radius. This results in a 30% increase in the volume inside which peripheral tumour cells may receive a therapeutic dose. The median therapeutic ratio within the therapeutic margin varied from 1.05 at 3 cm up to 1.25 at 10 cm. Thus there is little benefit for less advanced tumours with thickness less than 3 cm. However, cervical cancer frequently presents in an advanced state in Southeast Asia and in Aboriginal communities in Australia, partially attributable to low Pap smear screening rates. These conclusions support the development and testing of boron compounds in in vitro and in vivo models for cervical cancer

  13. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  14. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  15. Cosmis Lithium-Beryllium-Boron Story

    Science.gov (United States)

    Vangioni-Flam, E.; Cassé, M.

    Light element nucleosynthesis is an important chapter of nuclear astrophysics. Specifically, the rare and fragile light nuclei Lithium, Beryllium and Boron (LiBeB) are not generated in the normal course of stellar nucleosynthesis (except Lithium-7) and are, in fact, destroyed in stellar interiors. This characteristic is reflected in the low abundance of these simple species. Up to recently, the most plausible interpretation was that galactic cosmic rays (GCR) interact with interstellar CNO to form LiBeB. Other origins have been also identified, primordial and stellar (Lithium-7) and supernova neutrino spallation (Lithium-7 and Boron-11). In contrast, Beryllium-9, Boron-10 and Lithium-6 are pure spallative products. This last isotope presents a special interest since the Lithium-7/Lithium-6 ratio has been measured in a few halo stars offering a new constraint on the early galactic evolution. However, in the nineties, new observations prompted astrophysicists to reassess the question. Optical measurements of the beryllium and boron abundances in halo stars have been achieved by the 10 meters KECK telescope and the Hubble Space Telescope. These observations indicate a quasi linear correlation between Be and B vs Fe, at least at low metallicity, unexpected on the basis of GCR scenario, predicting a quadratic relationship. As a consequence, the origin and the evolution of the LiBeB nuclei has been revisited. This linearity implies the acceleration of C and O nuclei freshly synthesized and their fragmentation on the the interstellar Hydrogen and Helium. Wolf-Rayet stars and supernovae via the shock waves induced, are the best candidates to the acceleration of their own material enriched into C and O; so LiBeB is produced independently of the Interstellar Medium chemical composition. Moreover, neutrinos emitted by the newly born neutron stars interacting with the C layer of the supernova could produce specifically Lithium-7 and Boron-11. This process is supported by the

  16. Implementation of Low Boron Core for APR1400 Initial Cycle

    International Nuclear Information System (INIS)

    Low boron capability of a nuclear power plant is rather a qualitative specification requiring the nuclear power plant to be shut down by control rods alone at any time of a plant cycle according to EUR. The reduction of soluble boron is beneficial since it gives the reduction of the corrosive effects in the plant system and improves plant safety giving more negative MTC. Thus, it is necessary to reduce the amount of soluble boron for the criticality to achieve the low boron capability. However, the reduction of soluble boron has its own set of specific challenges that must be overcome. There are two methods to enable the reduction of soluble boron without modifying plant system significantly. The goal of this study is to investigate the loading pattern to achieve the soluble boron reduction for Shin-Kori Unit 5 APR1400 initial core using the low and high content gadolinia burnable absorbers with standard fuel rod enrichment and to verify the feasibility of low boron core with conventional gadolinia burnable absorbers only. For this study, KARMA has been employed to solve 2-D Transport equation, and ASTRA is used for full core analysis. It was possible to achieve the low boron core for APR1400 Cycle 1 using extended usage of two types of gadolinia burnable absorbers sacrificing fuel cycle economy a little bit while enhancing plant safety significantly. Gd rod patterns within an assembly were optimized through geometrical weighting and loading pattern was developed based on these patterns. The amount of soluble boron reduction achieved is 45.4%. The improvement in plant safety is significant resulting in the reduction of least negative best-estimate MTC by about 4 pcm. Also shutdown margin is increased slightly for low boron core. However, the behavior of axial power shape turns out to be undesirable showing a relatively large fluctuation caused by the more negative MTC. It was found that the low boron core might impose kind of operational difficulty. It is usually

  17. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration.

  18. Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 x 1 observed with scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 x 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873-1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49-TiSi2 and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti-Si.

  19. The effect of silicide ceramic coatings on the high-temperature strength and plasticity of niobium alloys of the Nb-W-Mo-Zr system

    International Nuclear Information System (INIS)

    A study is made into short-term rupture strength and plasticity of 5VMTs alloy of Nb-W-Mo-Zr system and a 5VMTs-silicide ceramic coating composite material in vacuum, inert environment and in the air within a temperature range of 290-2070 K. The kinetics of defect generation and development both in the protective coating and the matrix is studied. The values of limiting plastic strains are determined at which the composite materials preserves its carrying capacity in high temperature aggressive and oxidizing gaseous media

  20. Influence of Boron on transformation behavior during continuous cooling of low alloyed steels

    Energy Technology Data Exchange (ETDEWEB)

    Terzic, A., E-mail: Adnan.Terzic@imf.tu-freiberg.de [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Calcagnotto, M. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Guk, S. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Schulz, T. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Kawalla, R. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany)

    2013-11-01

    Abstracts: The phase transformation behavior during continuous cooling of low-carbon (LC) Boron-treated steels was studied. Furthermore, the influence of combining Boron with Nb or Ti or V on transformation kinetics was investigated. Additions of Boron to LC steels have a strong influence on the ferrite transformation. By adding 30 ppm Boron to a Boron-free reference alloy the suppressing effect on the ferrite transformation is most pronounced, whereas 10 ppm Boron has almost no effect and 50 ppm Boron the same effect as 30 ppm Boron. Thereby the critical Boron concentration for transformation kinetics in this alloying concept is 30 ppm. The combination of Boron with Ti shifts the phase fields to shorter times and increase the ferrite start temperature, whereas the combination of B+V and B+Nb only affects the ferrite start temperature. Hardness values are mostly influenced by the presence of Boron and strongly depend on the cooling rate.

  1. M5Si3(M=Ti, Nb, Mo) Based Transition-Metal Silicides for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhihong Tang

    2007-12-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600 C. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti{sub 5}Si{sub 3}-based alloys was investigated. Oxidation behavior of Ti{sub 5}Si{sub 3}-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti{sub 5}Si{sub 3} by nucleation and growth of nitride subscale. Ti{sub 5}Si{sub 3.2} and Ti{sub 5}Si{sub 3}C{sub 0.5} alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi{sub 2} coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500 C. Shifting coating composition to T1+T2+Mo{sub 3}Si region showed the possibility to extend the coating lifetime above 1500 C by more than ten times via formation of slow growing Mo{sub 3}Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nb{sub ss} (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L {leftrightarrow} Nb{sub SS} + NbB was determined to occur at 2104 {+-} 5 C by DTA.

  2. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  3. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  4. Adsorption characteristics of arsenic and boron by soil

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, M.

    1986-01-01

    In order to obtain baseline data concerning the surface and ground water pollution caused by coal ash disposal, adsorption characteristics of arsenic (III) and boron by soil have been studied through laboratory experiments. The main results are as follows: (1) Arsenic (III) and boron adsorption on soil was strongly dependent on pH with adsorption maxima at pH 8 and 8-9, respectively. (2) Arsenic (III) and boron adsorption on soil over the entire concentration ranges investigated could be described by the Langmuir adsorption isotherm and the Freundlich adsorption isotherm, respectively. The Henry adsorption isotherm was also applicable over the lower concentration ranges of arsenic (III) and boron (As (III): < 0.1 deltag/ml; B: < 5deltag/ml.) (3) Arsenic (III) and boron adsorption on soil is controlled mainly by the contents of extractable Fe oxide and hydroxide for arsenic (III) and by the contents of extractable Al hydroxide and allophane (amorphous aluminium silicates) for boron. (4) Adsorption and movement of arsenic (III) and boron during the infiltration of coal ash leachate in soil layer were investigated by means of the unsteady-state, one-dimensional convective-diffusive mass transport model. This model is very useful for evaluation and prediction of the contamination of ground water by trace elements such as arsenic (III) and boron leached at coal ash disposal site.

  5. Removal of boron species by layered double hydroxides: a review.

    Science.gov (United States)

    Theiss, Frederick L; Ayoko, Godwin A; Frost, Ray L

    2013-07-15

    Boron, which is an essential element for plants, is toxic to humans and animals at high concentrations. Layered double hydroxides (LDHs) and thermally activated LDHs have shown good uptake of a range of boron species in laboratory scale experiments when compared to current available methods, which are for the most part ineffective or prohibitively expensive. LDHs were able to remove anions from water by anion exchange, the reformation (or memory) effect and direct precipitation. The main mechanism of boron uptake appeared to be anion exchange, which was confirmed by powder X-ray diffraction (XRD) measurements. Solution pH appeared to have little effect on boron sorption while thermal activation did not always significantly improve boron uptake. In addition, perpetration of numerous LDHs with varying boron anions in the interlayer region by direct co-precipitation and anion exchange have been reported by a number of groups. The composition and orientation of the interlayer boron ions could be identified with reasonable certainty by applying a number of characterisation techniques including: powder XRD, nuclear magnetic resonance spectroscopy (NMR), X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy. There is still considerable scope for future research on the application of LDHs for the removal of boron contaminants. PMID:23635479

  6. Design, Fabrication and Performance of Boron-Carbide Control Elements

    International Nuclear Information System (INIS)

    A control blade design, incorporating boron-carbide (B4C) in stainless-steel tubes, was introduced into service in boiling water reactors in April 1961. Since that time this blade has become the standard reference control element in General Electric boiling-water reactors, replacing the 2% boron-stainless-steel blades previously used. The blades consist of a sheathed, cruciform array of small vertical stainless-steel tubes filled with compácted boron-carbide powder. The boron-carbide powder is confined longitudinally into several independent compartments by swaging over ball bearings located inside the tubes. The development and use of boron-carbide control rods is discussed in five phases: 1. Summary of experience with boron-steel blades and reasons for transition to boron-carbide control; 2. Design of the boron-carbide blade, beginning with developmental experiments, including early measurements performed in the AEC ''Control Rod Material and Development Program'' at the Vallecitos Atomic Laboratory, through a description of the final control blade configuration; 3. Fabrication of the blades and quality control procedures; 4. Results of confirmatory pre-operational mechanical and reactivity testing; and 5. Post-operational experience with the blades, including information on the results of mechanical inspection and reactivity testing after two years of reactor service. (author)

  7. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  8. Determination of boron in silicates after ion exchange separation

    Science.gov (United States)

    Kramer, H.

    1955-01-01

    Existing methods for the determination of boron in silicates are not entirely satisfactory. Separation as the methyl ester is lengthy and frequently erratic. An accurate and rapid method applicable to glass, mineral, ore, and water samples uses ion exchange to remove interfering cations, and boron is determined titrimetrically in the presence of mannitol, using a pH meter to indicate the end point.

  9. Low-dimensional boron structures based on icosahedron B12

    Science.gov (United States)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  10. Finite Element Analysis Of Boron Diffusion In Wood

    DEFF Research Database (Denmark)

    Krabbenhøft, Kristian; Hoffmeyer, Preben; Bechgaard, Carl;

    2002-01-01

    The coupled heat and mass transfer equations for air, water and heat transfer are supplemented with a conservation equation for an additional species representing the concentration of boron in wood. Boundary conditions for wood-air. wood-soil and wood-boron interfaces arc discussed and finally...

  11. Eleventh international conference on boron chemistry. Programme and abstracts

    International Nuclear Information System (INIS)

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports

  12. Boron Speciation in Soda-Lime Borosilicate Glasses Containing Zirconium

    International Nuclear Information System (INIS)

    Boron speciation was investigated in soda-lime borosilicate glass containing zirconium. In such compositions, competition between charge compensators (here, sodium and calcium) can occur for the compensation of tetrahedral boron or octahedral zirconium units. 11B MAS NMR is particularly suitable for obtaining data on preferential compensation behavior that directly affects the boron coordination number. In addition to the classical proportions of tri- and tetrahedral boron, additional data can be obtained on the contributions involved in these two coordination numbers. An approach is described here based on simultaneous MAS spectrum analysis of borosilicate glass with variable Zr/Si and Ca/Na ratios at two magnetic field strengths (11. 7 and 18. 8 T), with constraints arising from MQMAS spectroscopy, detailed analysis of satellite transitions, and spin-echo experiments. New possibilities of 11B NMR were presented for improving the identification and quantification of the different contributions involved in tri- and tetrahedral boron coordination. Both NMR and Raman revealed a trend of decreased tetrahedral boron proportion with the increase of Ca/Na ratio or the Zr/Si ratio. This strongly suggests that zirconium compensation takes preference over boron compensation, and that zirconium and boron are both compensated mainly by sodium rather than calcium. (authors)

  13. Method for removal of phosgene from boron trichloride

    Science.gov (United States)

    Freund, S.M.

    1983-09-20

    Selective ultraviolet photolysis using an unfiltered mercury arc lamp has been used to substantially reduce the phosgene impurity in a mixture of boron trichloride and phosgene. Infrared spectrophotometric analysis of the sample before and after irradiation shows that it is possible to highly purify commercially available boron trichloride with this method. 5 figs.

  14. Contamination of urban garden soils with copper and boron

    Energy Technology Data Exchange (ETDEWEB)

    Purves, D.

    1966-06-04

    Spectrochemical analyses of garden soils sampled in the Edinburgh and Dundee areas indicate that there is substantial contamination of urban soils with copper and boron. These soils were analyzed spectrochemically with respect to total copper and water-extractable boron content with the view of comparing the levels obtained in urban areas with levels in arable soils in rural areas. The results indicate that urban garden soils contain about four times as much copper and two to three times as much water-soluble boron as rural arable soils. The existence of such a marked disparity between the levels of two potentially toxic elements in urban and rural areas is evidence of slow poisoning of the soil environment in built-up areas and is cause for concern. While the major source of contamination of soils with copper and boron is still a matter for speculation, it is probable that the addition of soot to garden soils and the fall-out of sooty material in built-up areas where atmospheric pollution is a problem make a substantial contribution to the water-extractable boron content of urban soils. Three samples of soot from domestic chimneys, obtained from independent sources, were found on analysis to contain 640, 650 and 555 p.p.m. water-extractable boron, and it is evident that the addition to soil of even small amounts of soot with a boron content of this order would have a marked effect on its water-extractable boron content.

  15. Does boron affect hormone levels of barley cultivars?

    Directory of Open Access Journals (Sweden)

    Muavviz Ayvaz

    2012-11-01

    Full Text Available Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare cultivars (Vamik Hoca and Efes 98 were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm to plants that had grown from seeds for four weeks. Plants were harvested, stem-root length and stem-root dry-fresh weight content were determined. For further analysis, chlorophyll, total protein, endogenic IAA and ABA content analyses were carried out. Results: According to the data obtained, plant growth and development decreased with increasing boron concentrations. With increasing boron concentrations, soluble total protein increased in both cultivars. Boron application led to increased endogenic IAA content in both cultivars. 10 and 20 ppm boron application led to increased endogenic ABA content in Vamik Hoca cultivar whereas endogenic ABA content decreased in Efes 98. Absence of boron application led to increased endogenic IAA and ABA content in both cultivars. Conclusion: As a result, the response to boron is different in the two cultivars and Efes 98 may be more resistant to the toxicity than Vamik Hoca cultivar.

  16. Composition and microhardness of CAE boron nitride films

    International Nuclear Information System (INIS)

    The paper deals with boron nitride produced by cathodic arc evaporation techniques.The films were applied on titanium and cemented carbide substrates. Their characterization was carried out using X-ray diffraction and Knoop microhardness tests. Demonstrated are the high properties of two-phase films, containing β (cubic) and γ (wurtzitic) modifications of boron nitride. (author). 7 refs., 1 fig., 3 tabs

  17. Synthesis and photoluminescence property of boron carbide nanowires

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B2O3/C powder precursors under an argon flow at 1100~C. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm.

  18. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    JinxiaMa; YuxiuPeng; ZhongzhengLi

    2004-01-01

    In this paper it was studied that these dosage effectsof CPAM, cationic starch,boron modified silica sol(BMS), A12(SO4)3, pH value and electrolyte on theretention and drainage of different microparticulatesystems including CPAM, cationic starch and boronsilica sol. The research results indicated that CPAMhad no good retention when used with boron silicasol. The best retention efficiency was the micropar-ticulate system of CPAM + cationic starch withboron modified silica sol; Secondly was that ofcationic starch with boron modified silica sol; Theworst was that of CPAM with boron modified silicasol. The retention efficiency had no relation with theaddition order between CPAM and cationic starch. Itwas also found that the microparticulate retentionsystem of boron modified silica sol could be used inalum-rosin sizing and in acidity, neutral or alkalinepapermaking conditions. This system also could beused with close circulate water so that it could reducethe water pollution and waste.

  19. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  20. Optical characteristic analysis of the boronization process by using carborane

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wonwook; Park, Kyungdeuk; Choi, Youngsun; Oh, Chahwan [Hanyang University, Seoul (Korea, Republic of)

    2014-09-15

    Boronization with carborane (C{sub 2}B{sub 10}H{sub 12}) was achieved in a vacuum vessel coupled to a filament discharge system. Optical emission spectroscopy was employed to characterize the boronization process. The Balmer lines of hydrogen and deuterium were measured, and the boronization process was analyzed by using the intensity ratio of the H{sub α} to the D{sub α} line (I{sub H}/I{sub D}). The relation between the pressure and the intensity ratio was investigated, and the thickness of the deposited boron film was predicted. Also, the dilution ratio H/(H + D) of the boron film was analyzed and compared with the one predicted from an optical analysis of the emission spectrum.

  1. Ion implantation of boron in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K.S.

    1985-05-01

    Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.

  2. Numerical simulation of boron injection in a BWR

    Energy Technology Data Exchange (ETDEWEB)

    Tinoco, Hernan, E-mail: htb@forsmark.vattenfall.s [Forsmarks Kraftgrupp AB, SE-742 03 Osthammar (Sweden); Buchwald, Przemyslaw [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Frid, Wiktor, E-mail: wiktor@reactor.sci.kth.s [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

    2010-02-15

    The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of

  3. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  4. pH dependent salinity-boron interactions impact yield, biomass, evapotranspiration and boron uptake in broccoli (Brassica oleracea L.)

    Science.gov (United States)

    Soil pH is known to influence many important biochemical processes in plants and soils, however its role in salinity - boron interactions affecting plant growth and ion relations has not been examined. The purpose of this research was to evaluate the interactive effects of salinity, boron and soil ...

  5. Ballistic thermoelectric properties in boron nitride nanoribbons

    Science.gov (United States)

    Xie, Zhong-Xiang; Tang, Li-Ming; Pan, Chang-Ning; Chen, Qiao; Chen, Ke-Qiu

    2013-10-01

    Ballistic thermoelectric properties (TPs) in boron nitride nanoribbons (BNNRs) are studied using the nonequilibrium Green's function atomistic simulation of electron and phonon transport. A comparative analysis for TPs between BNNRs and graphene nanoribbons (GNRs) is made. Results show that the TPs of BNNRs are better than those of GNRs stemming from the higher power factor and smaller thermal conductance of BNNRs. With increasing the ribbon width, the maximum value of ZT (ZTmax) of BNNRs exhibits a transformation from the monotonic decrease to nonlinear increase. We also show that the lattice defect can enhance the ZTmax of these nanoribbons strongly depending on its positions and the edge shape.

  6. Low-dimensional boron nitride nanomaterials

    Directory of Open Access Journals (Sweden)

    Amir Pakdel

    2012-06-01

    Full Text Available In this review, a concise research history of low-dimensional boron nitride (BN nanomaterials followed by recent developments in their synthesis, morphology, properties, and applications are presented. Seventeen years after the initial synthesis of BN nanotubes, research on BN nanomaterials has developed far enough to establish them as one of the most promising inorganic nanosystems. In this regard, it is envisaged that the unique properties of low-dimensional BN systems, such as superb mechanical stiffness, high thermal conductivity, wide optical bandgap, strong ultraviolet emission, thermal stability and chemical inertness will play a key role in prospective developments.

  7. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  8. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  9. Boron nitride nanomaterials for thermal management applications.

    Science.gov (United States)

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed. PMID:25652360

  10. Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

    Science.gov (United States)

    Ogata, K; Salager, E; Kerr, C J; Fraser, A E; Ducati, C; Morris, A J; Hofmann, S; Grey, C P

    2014-01-01

    Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.

  11. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

    Science.gov (United States)

    Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, FJ; Bahena, D.; Ballesteros, C.; Hernandez-Calderón, I.; Vázquez, L.

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe+ ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  12. Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

    Science.gov (United States)

    Ogata, K; Salager, E; Kerr, C J; Fraser, A E; Ducati, C; Morris, A J; Hofmann, S; Grey, C P

    2014-01-01

    Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies. PMID:24488002

  13. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    Science.gov (United States)

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  14. Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

    NARCIS (Netherlands)

    Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

    2012-01-01

    The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

  15. Influence of the composition of the boroning mixture on the dimension change of pressed and boroned samples from iron powder

    Directory of Open Access Journals (Sweden)

    Ivanov S.

    2008-01-01

    Full Text Available Volume changes occur during sintering and chemical-thermal treatments of metal powder samples. The results of the investigation of the volume change of pressed and boroned samples from an iron powder, depending on the mixture composition used for the boroning process, are presented in this paper. The basic mixture, used for boroning of the investigated samples from iron powder, is modified by the addition of activators with different chemical compositions and in different concentrations, of up to 4 wt %. Mixtures with ammonium bifluoride, ammonium chloride and boron potassium fluoride were investigated. The research results and the mathematical modelling enable the choice of mixture compositions for boroning based on the volume change given in advance.

  16. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  17. Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O

    Science.gov (United States)

    Slack, G. A.; Morgan, K. E.

    2015-09-01

    Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

  18. Application of Cycloaddition Reactions to the Syntheses of Novel Boron Compounds

    Directory of Open Access Journals (Sweden)

    John A. Maguire

    2010-12-01

    Full Text Available This review covers the application of cycloaddition reactions in forming the boron-containing compounds such as symmetric star-shaped boron-enriched dendritic molecules, nano-structured boron materials and aromatic boronic esters. The resulting boron compounds are potentially important reagents for both materials science and medical applications such as in boron neutron capture therapy (BNCT in cancer treatment and as drug delivery agents and synthetic intermediates for carbon-carbon cross-coupling reactions. In addition, the use of boron cage compounds in a number of cycloaddition reactions to synthesize unique aromatic species will be reviewed briefly.

  19. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  20. Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2015-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

  1. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  2. Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R Roy; Jordan, Kevin; Smith, Michael W

    2015-03-24

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  3. β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

    2013-05-08

    In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

  4. Microdosimetry for Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    The specific aims of the research proposal were as follows: (1) To design and construct small volume tissue equivalent proportional counters for the dosimetry and microdosimetry of high intensity thermal and epithermal neutron beams used in BNCT, and of modified fast neutron beams designed for boron neutron capture enhanced fast neutron therapy (BNCEFNT). (2) To develop analytical methods for estimating the biological effectiveness of the absorbed dose in BNCT and BNCEFNT based on the measured microdosimetric spectra. (3) To develop an analytical framework for comparing the biological effectiveness of different epithermal neutron beams used in BNCT and BNCEFNT, based on correlated sets of measured microdosimetric spectra and radiobiological data. Specific aims (1) and (2) were achieved in their entirety and are comprehensively documented in Jay Burmeister's Ph.D. dissertation entitled ''Specification of physical and biologically effective absorbed dose in radiation therapies utilizing the boron neutron capture reaction'' (Wayne State University, 1999). Specific aim (3) proved difficult to accomplish because of a lack of sufficient radiobiological data

  5. Durability of tannin-boron-treated timber

    Directory of Open Access Journals (Sweden)

    Gianluca Tondi

    2012-11-01

    Full Text Available Tannin-boron wood preservatives were investigated for their resistance against outdoor agents. This work focused on the analysis of the causes that affect the durability of the tannin-hexamine-treated samples. In particular, dimensional stability, resistance to leaching, and resistance to biological agents were investigated. The combined effect of deterioration agents was evaluated by subjecting the treated samples to simulated and natural weathering tests. The study of the appearance and of the color components (L*, a*, and b* according to CIELAB space of the exposed samples was monitored to assess the efficacy of the tannin-boron formulations for outdoor applications. Significant resistance against the action of water (EN 84, ENV 1250-2 and insects (EN 47 has been demonstrated in specific tests. Conversely, the continuous stress due to artificial and natural weathering deteriorates the color and the visible features of the treated specimens. The combined effect of moisture modifications, solar exposition, and leaching cycles damages the structure of the tannin-based polymeric network and subsequently it negatively affects its preservation properties.

  6. Thermal properties of boron and borides

    International Nuclear Information System (INIS)

    The influence of point defects on the thermal conductivity of polycrystalline β-B has been measured from 1 to 1000 K. Above 300 K, samples containing 2 at. % Hf and Zr have thermal conductivities close to that of amorphous boron, indicating very strong phonon scattering. A thermal conductivity of equal magnitude has also been measured near and below room temperature for nearly stoichiometric single crystals of the theoretical composition YB68. On the basis of a comparison with earlier measurements to temperatures as low as 0.1 K, it is concluded that the thermal conductivity of crystalline YB68 is indeed very similar, if not identical, to that expected for amorphous boron over the entire temperature range of measurement (0.1--300 K). Measurements of the specific heat of nearly stoichiometric YB68 between 1.5 and 30 K also reveal a linear-specific-heat anomaly of the same magnitude as is characteristic for amorphous solids, in fair agreement with earlier measurements by Bilir et al. It is concluded that the lattice vibrations of crystalline YB68 are glasslike

  7. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  8. Determination of boron spectrophotometry in thorium sulfate

    International Nuclear Information System (INIS)

    A procedure for the determination of microquantities of boron in nuclear grade thorium sulfate is described. The method is based on the extraction of BF-4 ion associated to monomethylthionine (MMT) in 1,2 - dichloroethane. The extraction of the colored BF-4-MMT complex does not allow the presence of sulfuric and phosphoric acids; other anions interfere seriously. This fact makes the dissolution of the thorium sulfate impracticable, since it is insoluble in both acids. On the other hand, the quantitative separation of thorium is mandatory, to avoid the precipitation of ThF4. To overcome this difficulty, the thorium sulfate is dissolved using a strong cationic ion exchanger, Th4+ being totally retained into the resin. Boron is then analysed in the effluent. The procedure allows the determination of 0.2 to 10.0 microgramas of B, with a maximum error of 10%. Thorium sulfate samples with contents of 0.2 to 2.0μg B/gTh have being analysed

  9. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Naoya, E-mail: okada-naoya@aist.go.jp [Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Uchida, Noriyuki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Kanayama, Toshihiko [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2015-03-07

    We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSi{sub n}) films and approximately 1-nm-thick crystalline WSi{sub n} epitaxial films (e-WSi{sub n}) on Si (100) substrates with composition n = 8–10, both composed of Si{sub n} clusters each of which encapsulates a W atom (WSi{sub n} clusters). The effect of annealing in the temperature range of 300–500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSi{sub n} is a nearly intrinsic semiconductor, whereas e-WSi{sub n} is an n-type semiconductor with electron mobility of ∼8 cm{sup 2}/V s and high sheet electron density of ∼7 × 10{sup 12 }cm{sup −2}. According to the temperature dependence of the electrical properties, a-WSi{sub n} has a mobility gap of ∼0.1 eV and mid gap states in the region of 10{sup 19 }cm{sup −3} eV{sup −1} in an optical gap of ∼0.6 eV with considerable band tail states; e-WSi{sub n} has a donor level of ∼0.1 eV with sheet density in the region of 10{sup 12 }cm{sup −2} in a band gap of ∼0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSi{sub n} cluster. In a-WSi{sub n}, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSi{sub n}, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.

  10. Characterization of complex carbide–silicide precipitates in a Ni–Cr–Mo–Fe–Si alloy modified by welding

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharyya, D., E-mail: dhb@ansto.gov.au; Davis, J.; Drew, M.; Harrison, R.P.; Edwards, L.

    2015-07-15

    Nickel based alloys of the type Hastelloy-N™ are ideal candidate materials for molten salt reactors, as well as for applications such as pressure vessels, due to their excellent resistance to creep, oxidation and corrosion. In this work, the authors have attempted to understand the effects of welding on the morphology, chemistry and crystal structure of the precipitates in the heat affected zone (HAZ) and the weld zone of a Ni–Cr–Mo–Fe–Si alloy similar to Hastelloy-N™ in composition, by using characterization techniques such as scanning and transmission electron microscopy. Two plates of a Ni–Cr–Mo–Fe–Si alloy GH-3535 were welded together using a TiG welding process without filler material to achieve a joint with a curved molten zone with dendritic structure. It is evident that the primary precipitates have melted in the HAZ and re-solidified in a eutectic-like morphology, with a chemistry and crystal structure only slightly different from the pre-existing precipitates, while the surrounding matrix grains remained unmelted, except for the zones immediately adjacent to the precipitates. In the molten zone, the primary precipitates were fully melted and dissolved in the matrix, and there was enrichment of Mo and Si in the dendrite boundaries after solidification, and re-precipitation of the complex carbides/silicides at some grain boundaries and triple points. The nature of the precipitates in the molten zone varied according to the local chemical composition. - Graphical abstract: Display Omitted - Highlights: • Ni-based alloy with Cr, Mo, Si, Fe and C was welded, examined with SEM, EBSD, and TEM. • Original Ni{sub 2}(Mo,Cr){sub 4}(Si,C) carbides changed from equiaxed to lamellar shape in HAZ. • Composition and crystal structure remained almost unchanged in HAZ. • Original carbides changed to lamellar Ni{sub 3}(Mo,Cr){sub 3}(Si,C) in some cases in weld metal. • Precipitates were mostly incoherent, but semi-coherent in some cases in weld

  11. Power Burst Facility/Boron Neutron Capture Therapy Program for cancer treatment

    Energy Technology Data Exchange (ETDEWEB)

    Ackermann, A.L. (ed.); Dorn, R.V. III.

    1990-08-01

    This report discusses monthly progress in the Power Boron Facility/Boron Neutron Capture Therapy (PBF/BNCT) Program for Cancer Treatment. Highlights of the PBF/BNCT Program during August 1990 include progress within the areas of: Gross Boron Analysis in Tissue, Blood, and Urine, boron microscopic (subcellular) analytical development, noninvasive boron quantitative determination, analytical radiation transport and interaction modeling for BNCT, large animal model studies, neutron source and facility preparation, administration and common support and PBF operations.

  12. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  13. Physical properties of CVD boron-doped multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Kartick C. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); Strydom, Andre M. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)], E-mail: amstrydom@uj.ac.za; Erasmus, Rudolph M.; Keartland, Jonathan M. [DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); School of Physics, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); Coville, Neil J. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa)], E-mail: Neil.Coville@wits.ac.za

    2008-10-15

    The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.

  14. Characterization of a boron carbide-based polymer neutron sensor

    Science.gov (United States)

    Tan, Chuting; James, Robinson; Dong, Bin; Driver, M. Sky; Kelber, Jeffry A.; Downing, Greg; Cao, Lei R.

    2015-12-01

    Boron is used widely in thin-film solid-state devices for neutron detection. The film thickness and boron concentration are important parameters that relate to a device's detection efficiency and capacitance. Neutron depth profiling was used to determine the film thicknesses and boron-concentration profiles of boron carbide-based polymers grown by plasma enhanced chemical vapor deposition (PECVD) of ortho-carborane (1,2-B10C2H12), resulting in a pure boron carbide film, or of meta-carborane (1,7-B10C2H12) and pyridine (C5H5N), resulting in a pyridine composite film, or of pyrimidine (C4H4N2) resulting in a pure pyrimidine film. The pure boron carbide film had a uniform surface appearance and a constant thickness of 250 nm, whereas the thickness of the composite film was 250-350 nm, measured at three different locations. In the meta-carborane and pyridine composite film the boron concentration was found to increase with depth, which correlated with X-ray photoelectron spectroscopy (XPS)-derived atomic ratios. A proton peak from 14N (n,p)14C reaction was observed in the pure pyrimidine film, indicating an additional neutron sensitivity to nonthermal neutrons from the N atoms in the pyrimidine.

  15. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    Jinxia Ma; Yuxiu Peng; Zhongzheng Li

    2004-01-01

    In this paper it was studied that these dosage effects of CPAM, cationic starch、boron modified silica sol (BMS), Al2(SO4)3, pH value and electrolyte on the retention and drainage of different microparticulate systems including CPAM, cationic starch and boron silica sol. The research results indicated that CPAM had no good retention when used with boron silica sol. The best retention efficiency was the microparticulate system of CPAM + cationic starch with boron modified silica sol; Secondly was that of cationic starch with boron modified silica sol; The worst was that of CPAM with boron modified silica sol. The retention efficiency had no relation with the addition order between CPAM and cationic starch. It was also found that the microparticulate retention system of boron modified silica sol could be used in alum-rosin sizing and in acidity, neutral or alkaline papermaking conditions. This system also could be used with close circulate water so that it could reduce the water pollution and waste.

  16. Boron Particle Ignition in Secondary Chamber of Ducted Rocket

    Directory of Open Access Journals (Sweden)

    J. X. Hu

    2012-01-01

    Full Text Available In the secondary chamber of ducted rocket, there exists a relative speed between boron particles and air stream. Hence, the ignition laws under static conditions cannot be simply applied to represent the actual ignition process of boron particles, and it is required to study the effect of forced convective on the ignition of boron particles. Preheating of boron particles in gas generator makes it possible to utilize the velocity difference between gas and particles in secondary chamber for removal of the liquid oxide layer with the aid of Stoke's forces. An ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism. The shearing action exerted by the high-speed flow causes a boundary layer to be formed in the surface of the liquid oxide layer, and the stripping away of this layer accounts for the accelerated ignition of boron particles. Compared with the King model, as the ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism, the oxide layer thickness thins at all times during the particle ignition and lower the ignition time.

  17. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  18. Nuclear characterizations and applications of boron-containing materials

    International Nuclear Information System (INIS)

    Materials either doped with traces of boron or containing this element as a matrix component have important technological and research applications. For most applications in technology, semiconductor doping, chemical vapor deposition of glass films, and optical waveguide fiber manufacture, boron levels or distribution must be controlled precisely. Thus, methods for quantitation of boron are needed, and its analytical chemistry still receives considerable study. Several nondestructive nuclear methods are described in this paper that have unique capabilities for quantitative analyses of boron at the trace and macro levels. Excellent high-sensitivity determinations are based on alpha track counting. For micro- and macroanalyses, the nuclear track technique using the 10B(n,α)7 Li reaction has been applied to map qualitatively the distribution of boron in borosilicate glass and in optical waveguide glass and fibers. Boron in the 1.59 to 7.75% range is determinable in silicate glasses. Similar information has also been obtained by prompt gamma neutron activation. Neuron depth profiling of boron in glass has been performed also. Results for several of these methods are reported

  19. Boron doping of graphene-pushing the limit.

    Science.gov (United States)

    Chaban, Vitaly V; Prezhdo, Oleg V

    2016-08-25

    Boron-doped derivatives of graphene have been intensely investigated because of their electronic and catalytic properties. The maximum experimentally observed concentration of boron atoms in graphite was 2.35% at 2350 K. By employing quantum chemistry coupled with molecular dynamics, we identified the theoretical doping limit for single-layer graphene at different temperatures, demonstrating that it is possible to achieve much higher boron doping concentrations. According to the calculations, 33.3 mol% of boron does not significantly undermine thermal stability, whereas 50 mol% of boron results in critical backbone deformations, which occur when three or more boron atoms enter the same six-member ring. Even though boron is less electro-negative than carbon, it tends to act as an electron acceptor in the vicinity of C-B bonds. The dipole moment of B-doped graphene depends strongly on the distribution of dopant atoms within the sheet. Compared with N-doped graphene, the dopant-dopant bonds are less destructive in the present system. The reported results motivate efforts to synthesize highly B-doped graphene for semiconductor and catalytic applications. The theoretical predictions can be validated through direct chemical synthesis. PMID:27533648

  20. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  1. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  2. Microstructure and Properties of Plasma Spraying Boron Carbide Coating

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Microstructure of plasma spray boron carbide coating was studied by SEM and TEM. Its physical,mechanical and electrical properties were measured. The results showed that high microhardness,modulus and Iow porosity of B4C coating were manufactured by plasma spray. It was lamellar packing and dense. The B4C coating examined here contained two principal structures and two impurity phase besides major phase. The relatively small value of Young′s modulus, comparing with that of the bulk materials, is explained by porosity. The Fe impurity phase could account for the relatively high electrical conductivity of boron carbide coating by comparing with the general boron carbide materials.

  3. Hugoniot equation of state and dynamic strength of boron carbide

    Science.gov (United States)

    Grady, Dennis E.

    2015-04-01

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20-60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable mechanistic

  4. Hugoniot equation of state and dynamic strength of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, Dennis E. [Applied Research Associates, Southwest Division, 4300 San Mateo Blvd NE, A-220, Albuquerque, New Mexico 87110-129 (United States)

    2015-04-28

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  5. Photometric and emission-spectrometric determination of boron in steels

    International Nuclear Information System (INIS)

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated. (orig.)

  6. Photometric and emission-spectrometric determination of boron in steels

    Energy Technology Data Exchange (ETDEWEB)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated.

  7. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  8. Process for producing wurtzitic or cubic boron nitride

    International Nuclear Information System (INIS)

    Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described

  9. Geometrical frustration in an element solid: (beta)-rhombohedral boron

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, T; Gygi, F; Reed, J; Udagawa, M; Motome, Y; Schwegler, E; Galli, G

    2009-05-19

    Although a comprehensive understanding of the basic properties of most elemental solids has been achieved, there are still fundamental, open questions regarding simple substances, e.g. boron. Based on an Ising model that describes the intrinsic defect states in elemental boron, we show that this system is the only known element to exhibit geometrical frustration in its solid form. Interestingly, we find that the peculiar transport properties of boron that have been reported over the past forty years originate from the presence of geometrical frustration.

  10. Advances in boron-10 isotope separation by chemical exchange distillation

    Energy Technology Data Exchange (ETDEWEB)

    Song Shuang, E-mail: chengruoyu2@sina.co [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Mu Yujun; Li Xiaofeng; Bai Peng [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China)

    2010-01-15

    Advances in boron-10 isotope separation by chemical exchange distillation are reviewed in this article. With a brief introduction of the principle of the separation, the progress on the research of this method and the problems relating to the separation coefficient are discussed. Several new donors, including nitromethane, acetone, methyl isobutyl ketone (MIBK) and diisobutyl ketone (DIBK), which have large separation factors are introduced. The complexes of these new donors and boron trifluoride (BF{sub 3}) are more stable than those of using the donors examined before. Among these new donors nitromethane could be a promising substitute for donors in present use to develop new technology of separating boron-10.

  11. Analyses of beyond design basis accident homogeneous boron dilution scenarios

    Energy Technology Data Exchange (ETDEWEB)

    Kereszturi, Andras; Hegyi, Gyoergy; Maraczy, Csaba; Trosztel, Istvan; Tota, Adam [Hungarian Academy of Sciences, Centre for Energy Research, Budapest (Hungary); Karsa, Zoltan [NUBIKI Nuclear Safety Research Institute, Ltd., Budapest (Hungary)

    2015-09-15

    Homogeneous boron dilution scenarios in a VVER-440 reactor were analyzed using the coupled KIKO3D-ATHLET code. The scenarios are named ''homogeneous'' because of the very slow dilution caused by a rupture in the heat exchanger of the makeup system. Without the presented analyses, a significant contribution of the homogeneous boron dilution to the Core Damage Frequency (CDF) had to be assumed in the Probabilistic Safety Analyses (PSA). According to the combined results of the presented deterministic and probabilistic analyses, the final conclusion is that boron dilution transients don't give significant contribution to the CDF for the investigated VVER-440 NPP.

  12. Tuning field emission properties of boron nanocones with catalyst concentration

    Institute of Scientific and Technical Information of China (English)

    Li Chen; Tian Yuan; Wang Deng-Ke; Shi Xue-Zhao; Hui Chao; Shen Cheng-Min; Gao Hong-Jun

    2011-01-01

    Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe3O4 nanoparticles are pre-manipulated on Si(111) to form catalyst patterns of different densities. The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles. High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization. The field emission behaviour is optimal when the spacing distance is close to the nanocone length, which indicates that this simple spin spread method has great potential applications in electron emission nanodevices.

  13. Boron complexing with H-resorcinol and acidic hydroxyxanthene dyes

    Energy Technology Data Exchange (ETDEWEB)

    Nazarenko, V.A.; Flyantikova, G.V.; Chekirda, T.N. (AN Ukrainskoj SSR, Odessa. Fiziko-Khimicheskij Inst.)

    1984-01-01

    Complex formation of boron with H-resorcinol (hr; 2,4-dihydroxybenzene-azo -8-hydroxynaphtalene-3,6-disulfonic acid) and acidic hydroxyxanthene dyes (hxd: fluorescein, eosine, erathrosine). Mixed-ligand complexes with a ratio of r:hr:hxd=1:1:1 are formed at pH=5-6. The chemism of the complex formation of boron with H-resorcinol and fluorescein has been studied. The stability constant of the complex is 1.12x10/sup 21/, the conditional molar absorptivitis 1.80x10/sup 0/. This complex formation reaction was used for photometric determination of boron in natural water.

  14. Photoelectron spectroscopy of boron aluminum hydride cluster anions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haopeng; Zhang, Xinxing; Ko, Yeon Jae; Gantefoer, Gerd; Bowen, Kit H., E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Li, Xiang [Center for Space Science and Technology, University of Maryland–Baltimore County, Baltimore, Maryland 21250 (United States); Kiran, Boggavarapu, E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry and Physics, McNeese State University, Lake Charles, Louisiana 70609 (United States); Kandalam, Anil K. [Department of Physics, West Chester University, West Chester, Pennsylvania 19383 (United States)

    2014-04-28

    Boron aluminum hydride clusters are studied through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations. Boron aluminum hydride cluster anions, B{sub x}Al{sub y}H{sub z}{sup −}, were generated in a pulsed arc cluster ionization source and identified by time-of-flight mass spectrometry. After mass selection, their photoelectron spectra were measured by a magnetic bottle-type electron energy analyzer. The resultant photoelectron spectra as well as calculations on a selected series of stoichiometries reveal significant geometrical changes upon substitution of aluminum atoms by boron atoms.

  15. Technology for boron-doped layers formation on the diamond

    Directory of Open Access Journals (Sweden)

    Zyablyuk K. N.

    2012-10-01

    Full Text Available The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impurity density indicate that they can be used for the manufacture of microwave field-effect transistors operating at room temperature. CVD diamond films doped with boron during the growth process also have the required for MOSFET manufacture carrier mobility. However, due to the high activation energy of boron, the required channel conductivity is achieved at high operating temperatures.

  16. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  17. Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

    International Nuclear Information System (INIS)

    The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B68Y, α-B12Al, B4C, and B6Si are described. Transition metals appear to be effective dopants for B68Y and B4C

  18. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

    Science.gov (United States)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

    1997-01-01

    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  19. Synthesis of boron nitride from boron containing poly(vinyl alcohol) as ceramic precursor

    Indian Academy of Sciences (India)

    M Das; S Ghatak

    2012-02-01

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD).

  20. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  1. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 5th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 22 in 1993. The solubility of the boron carrier play an important role in the BNCT. New water-soluble p-boronophenylalanine derivatives are synthesized and their biological activities are investigated (Chap. 2 and 3). Some chemical problems on the BNCT were discussed, and the complex formation reaction of hydroxylboryl compounds were studied by the paper electrophoresis (Chap. 4). The results of the medical investigation on the BNCT using BSH compounds are shown in Chap. 5. Syntheses of o- and m-boronophenylalanine were done and their optical resolution was tried (Chap. 6). The complex formation reaction of p-boronophenylalanine (BPA) with L-DOPA and the oxidation reaction of the analogs are found in Chap. 7. The pka of BPA were determined by the isotachophoresis (Chap. 8). The chemical nature of dihydroxyboryl compounds were investigated by an infrared spectroscopy and electrophoresis (Chap. 9). New synthetic methods of BPA and p-boronophenylserine using ester of isocyanoacetic acid are described in Chap. 10. The induction of chromosomal aberations by neutron capture reaction are discussed from a point of the biological view. The a of the presented papers are indexed individually. (J.P.N.)

  2. Determination of Boron Trifluoride in Boron Trifluoride Complex by Fluoride Ion Selective Electrode

    Institute of Scientific and Technical Information of China (English)

    郎五可; 张卫江; 唐银; 徐姣; 张雷

    2016-01-01

    A method was proposed to determine boron trifluoride in boron trifluoride complex using fluoride ion selective electrode(ISE). Hydroxide was chosen to mask aluminum for the determination of 0.01—0.1 mol/L of fluoride. The simulation indicated that the permissible aluminum masked at a certain pH value was limited and hardly related to F-concentration and boric acid. It is better to control pH value below 11.5 and the aluminum con-centration within 0.025 mol/L to minimize the interference of hydroxide to the fluoride ISE. The decomposition conditions of boron trifluoride by aluminum chloride were investigated. It is found that the F-detection ratio will approach 1.0 if the Al/F molar ratio is 0.3—0.7 and aluminum concentration is no more than 0.02 mol/L when heated at 80℃ for 10 min. In one word, hydroxide is quite fit to mask aluminum for samples which contain high content of fluoride and aluminum and the BF3 content can be successfully determined by this method.

  3. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  4. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  5. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  6. Hexagonal boron nitride and water interaction parameters

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  7. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp2-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  8. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  9. Excitons in boron nitride single layer

    Science.gov (United States)

    Galvani, Thomas; Paleari, Fulvio; Miranda, Henrique P. C.; Molina-Sánchez, Alejandro; Wirtz, Ludger; Latil, Sylvain; Amara, Hakim; Ducastelle, François

    2016-09-01

    Boron nitride single layer belongs to the family of two-dimensional materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining ab initio calculations and a tight-binding Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence (π ) and conduction (π*) bands the tight-binding analysis becomes quasiquantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground-state exciton is not a genuine Frenkel exciton, but a very localized tightly bound one. The other ones are similar to those found in transition-metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

  10. Hexagonal boron nitride and water interaction parameters.

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems. PMID:27131542

  11. Boron in Plants: Deficiency and Toxicity

    Institute of Scientific and Technical Information of China (English)

    Juan J. Camacho-Crist6bal; Jesus Rexach; Agustin González-Fontess

    2008-01-01

    Boron (B) is an essential nutrient for normal growth of higher plants, and B availability in soil and irrigation water is an important determinant of agricultural production. To date, a primordial function of B is undoubtedly its structural role in the cell wall; however, there is increasing evidence for a possible role of B in other processes such as the maintenance of plasma membrane function and several metabolic pathways. In recent years, the knowledge of the molecular basis of B deficiency and toxicity responses in plants has advanced greatly. The aim of this review is to provide an update on recent findings related to these topics, which can contribute to a better understanding of the role of B in plants.

  12. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Sørensen, P. G.; Björkdahl, O.;

    2006-01-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using...

  13. Recent Advances in Boron-Containing Conjugated Porous Polymers

    Directory of Open Access Journals (Sweden)

    Feng Qiu

    2016-05-01

    Full Text Available Porous polymers, integrating the advantages of porous materials and conventional polymers, have been well developed and exhibited tremendous attention in the fields of material, chemistry and biology. Of these, boron-containing conjugated porous polymers, featuring tunable geometric structures, unique Lewis acid boron centers and very rich physical properties, such as high specific surface, chargeable scaffold, strong photoluminescence and intramolecular charge transfer, have emerged as one of the most promising functional materials for optoelectronics, catalysis and sensing, etc. Furthermore, upon thermal treatment, some of them can be effectively converted to boron-doped porous carbon materials with good electrochemical performance in energy storage and conversion, extensively enlarging the applicable scope of such kinds of polymers. In this review, the synthetic approaches, structure analyses and various applications of the boron-containing conjugated porous polymers reported very recently are summarized.

  14. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  15. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  16. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-01

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.

  17. Isotopic compositions of boron in sediments and their implications

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Yingkai, X.

    of sediments are mostly closer to the boron isotopic composition of minerals. Such low delta sup(11)B values are attributed to the presence of borates, ulexite and other carbonate minerals in sediments of the salt lakes of Qaidam Basin....

  18. Spectrographic determination of traces of boron in steels

    International Nuclear Information System (INIS)

    A spectrographic method has been developed to determine quantitatively boron in steels in the 0.5 to 250 ppm concentration range. The samples are dissolved in acids and transformed into oxides, avoiding boron losses by the addition of mannitol. For the fluoride evolution of boron in the dc arc the following compounds have been considered: CuF2, LiF, NaF, and SrF2. CuF2, at a concentration of 10%, provides the highest line-to-background intensity ratio. An arc current of 5 amperes eliminates the interference from iron spectrum on the most sensitive boron line - B 2497.7 A. Variations in chromium and nickel contents have no effect on the analytical results. (author)

  19. Fractionation of Boron Isotopes in Icelandic Hydrothermal Systems

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, J.K.; Palmer, M.R.

    1995-01-01

    Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive {delta}{sup 11}B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive {delta}{sup 11}B than the high temperature systems, indicating fractionation of boron due to adsorption of the lighter isotope onto secondary minerals. Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems.

  20. Boron removal from metallurgical grade silicon by oxidizing refining

    Institute of Scientific and Technical Information of China (English)

    WU Ji-jun; MA Wen-hui; YANG Bin; DAI Yong-nian; K. MORITA

    2009-01-01

    A purification process was developed to remove impurity element boron from the metallurgical grade silicon by the electric arc furnace refining. The thermodynamic equilibria calculation and experiment to remove boron in the oxidizing atmosphere were performed and analyzed. Boron is removed as the gaseous species BxOy and BxHzOy in O2 and H2O-O2 atmosphere respectively. The equilibrium pressure of BxHzOy is 105-1010 times that of BxOy. Boron is removed and its content in silicon is reduced from 18×10-6 to 2×10-6 in the Ar-H2O-O2 atmosphere in the electric arc furnace.

  1. Phonon transport in single-layer Boron nanoribbons

    CERN Document Server

    Zhang, Zhongwei; Peng, Qing; Chen, Yuanping

    2016-01-01

    Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and tr...

  2. Boron isotope method for study of seawater intrusion

    Institute of Scientific and Technical Information of China (English)

    肖应凯; 尹德忠; 刘卫国; 王庆忠; 魏海珍

    2001-01-01

    A distinct difference in boron isotopes between seawater and terrestrial water is emphasized by δ11B values reported for seawater and groundwater, with an average of 38.8‰ and in the range of -8.9‰ to 9.8‰, respectively. The isotopic composition of boron in groundwater can be used to quantify seawater intrusion and identify intrusion types, e.g. seawater or brine intrusions with different chemical and isotopic characteristics, by using the relation of δ11B and chloride concentration. The feasibility of utilizing boron isotope in groundwater for studying seawater intrusion in Laizhou Bay Region, China, is reported in this study, which shows that boron isotope is a useful and excellent tool for the study of seawater intrusion.

  3. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Boron-nitride nanotubes (BNNTs) exhibit electroactive behavior in response to mechanical deformation, but the origin of this phenomenon is not well understood. Our...

  4. Electronic structure of boron-interstitial clusters in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Deak, Peter [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Gali, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Solyom, Andras [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Buruzs, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Frauenheim, Thomas [University of Paderborn, Theoretical Physics, Paderborn, D-33095 (Germany)

    2005-06-08

    Hybrid functional calculations within density functional theory are carried out to investigate the electronic structure of boron-interstitial clusters (BICs). A one-parameter hybrid functional is chosen is to give accurate results for the whole electronic structure (including the gap) and the elastic properties of crystalline silicon. It is shown that this approach provides dependable defect level positions in the gap. Investigation of the boron+vacancy and boron+self-interstitial centres gives a consistent description of the experimentally observed G10 and G28 centres. The electronic structure of BICs, which may affect the activation rate of boron implantation, are reported. The one-electron level positions of isolated B{sub n}I{sub m} defects are given.

  5. Analytical chemistry methods for boron carbide absorber material. [Standard

    Energy Technology Data Exchange (ETDEWEB)

    DELVIN WL

    1977-07-01

    This standard provides analytical chemistry methods for the analysis of boron carbide powder and pellets for the following: total C and B, B isotopic composition, soluble C and B, fluoride, chloride, metallic impurities, gas content, water, nitrogen, and oxygen. (DLC)

  6. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  7. For boron neutron capture therapy,synthesizing boron-polymer compounds and testing in laboratory conditions

    International Nuclear Information System (INIS)

    The aim of this project is to establish a focus point at Turkish Atomic Energy Authority (TAEA) in the field of Boron Neutron Capture Therapy which is a binary radiotherapy method for brain tumours. Moreover in the scope of the project, a new alternative of 10B-carrier compounds will be synthesized, the neutron source will be determined and the infrastructure to start the clinical trials of BNCT in our country will be established. BNCT is a binary radiotherapy method and the successful of this method is depend on the synthesized boron compounds which have the selective targeting property with tumour cells and neutron optimization. The water-soluble polymer based boron compounds having biochemical and physiological properties will be synthesized and cell culture experiment will be done. In addition, after the neutron source is set up in our country, the infrastructure studies will be started in order to start the clinical trials of BNCT. In this project, there are three different groups as boron compounds, neutron physics and medical group. Neutron physics group is starting the calculations of neutron beam parameters using in BNCT application. But, medical group has no active studies yet. Boron compounds group has been carried out two different experimental studies. In the first experimental study, functional groups have been bound to boron containing polymers to enhance the selectively targeting property and characterized by various analysis methods. Later, cell culture experiment will be done. The first study has been carried out with Hacettepe University. Up to present, completed studies are listed as: -Maleic anhydride oligomer was synthesized and then 2-aminoethyl diphenyl borate (2-AEPB) and monomethoxy poly(ethylene glycol) (PEG) was bound to this oligomer, respectively. Thus, [MAH]n-g1-2-AEPB-g2-PEG was synthesized. -2-AEPB compound were bound to poly(acrylic acid) polymer at different three mole ratio.Then, the selected Poli(Ac)-g1-2-AEPB polymer was

  8. Dynamic compaction of boron carbide by a shock wave

    Science.gov (United States)

    Buzyurkin, Andrey E.; Kraus, Eugeny I.; Lukyanov, Yaroslav L.

    2016-10-01

    This paper presents experiments on explosive compaction of boron carbide powder and modeling of the stress state behind the shock front at shock loading. The aim of this study was to obtain a durable low-porosity compact sample. The explosive compaction technology is used in this problem because the boron carbide is an extremely hard and refractory material. Therefore, its compaction by traditional methods requires special equipment and considerable expenses.

  9. Manufacturing uniform field silicon drift detector using double boron layer

    International Nuclear Information System (INIS)

    Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field

  10. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.;

    2013-01-01

    . The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron...

  11. Determination of boron in nuclear grade sodium metal

    International Nuclear Information System (INIS)

    Determination of boron in nuclear grade sodium metal as rosocyanin and rubrocurcumin complexes is described. Separation of sodium matrix was attempted by vacuum distillation of sodium, methyl borate distillation and ion exchange methods. The ion exchange method was found to be most suitable. Optimum conditions were standardised for the estimation of boron in nuclear grade sodium. In the 200 ppb range an RSD of 5 per cent was obtained. (author). 12 refs

  12. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  13. Disorder and defects are not intrinsic to boron carbide

    OpenAIRE

    Swastik Mondal; Elena Bykova; Somnath Dey; Sk. Imran Ali; Natalia Dubrovinskaia; Leonid Dubrovinsky; Gleb Parakhonskiy; Sander van Smaalen

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichio...

  14. Research of nanocomposite structure of boron nitride at proton radiation

    OpenAIRE

    Borodin, Yuri Viktorovich; Ermolaev, D. S.; Pak, V.; Zhang, K.

    2016-01-01

    Using roentgen diffraction and electron microscopy, the influence of nanosecond irradiation by ion beams of high energy on forming of self-organized nanoblocks in near surface's layers of boron nitride (BN) has been studied. It was shown that low temperature transitions from hexagonal to wrutz boron nitrides is associated with changes of shape and sizes of self-organized particles consisting the nanoblocks. We have calculated the parameters of nanoblocks using the meanings of interplane dista...

  15. Cubic boron nitride- a new material for ultracold neutron application

    International Nuclear Information System (INIS)

    For the first time, the Fermi potential of cubic boron nitride (cBN) was measured at the ultra cold neutron source at the TRIGA reactor, Mainz using the time of flight method (TOF). The investigated samples have a Fermi potential of about 300 neV. Because of its good dielectric characteristics, cubic boron nitride could be used as suitable coating for insulator in storage chambers of future EDM projects. This talk presents recent results and an outlook on further investigations.

  16. Explicitly correlated wave function for a boron atom

    CERN Document Server

    Puchalski, Mariusz; Pachucki, Krzysztof

    2015-01-01

    We present results of high-precision calculations for a boron atom's properties using wave functions expanded in the explicitly correlated Gaussian basis. We demonstrate that the well-optimized 8192 basis functions enable a determination of energy levels, ionization potential, and fine and hyperfine splittings in atomic transitions with nearly parts per million precision. The results open a window to a spectroscopic determination of nuclear properties of boron including the charge radius of the proton halo in the $^8$B nucleus.

  17. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    OpenAIRE

    Samantha Bruzzone; Demetrio Logoteta; Gianluca Fiori; Giuseppe Iannaccone

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double...

  18. Does boron affect hormone levels of barley cultivars?

    OpenAIRE

    Muavviz Ayvaz; Mesut Koyuncu; Avni Guven; FAGERSTEDT, KURT V.

    2012-01-01

    Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare) cultivars (Vamik Hoca and Efes 98) were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm) ...

  19. Boron-oxygen polyanion in the crystal structure of tunellite

    Science.gov (United States)

    Clark, J.R.

    1963-01-01

    The crystal structure of tunellite, SrO??3B2O 3??4H2O, with infinite sheets of composition n[B6O9(OH)2]2-, has cations and water molecules in the spaces within the sheets. Adjacent sheets are held together by hydrogen bonding through the water molecules. The boron-oxygen polyanions provide the first example in hydrated borate crystals of one oxygen linked to three borons.

  20. Study of the phase composition of silicide coatings, based on layered Nb-Mo structures, obtained by vacuum-arc deposition

    Science.gov (United States)

    Lozovan, A. A.; Betsofen, S. Ya; Lenkovets, A. S.

    2016-07-01

    A multilayer composite ∼1000 μm in thickness, formed by niobium and molybdenum layers (number of layers n = 230), is obtained by vacuum-arc deposition with subsequent siliconization of the surface layers at a temperature of 1200 °C. Layer-by-layer phase analysis is performed by X-ray diffraction and scanning electron microscopy. It is found that in the surface layers ∼130 μm in thickness, single-phase silicides (Nb x Mo1- x )Si2 are formed with the hexagonal C40 structure (Strukturbericht designations). Alternating layers of solid solutions based on niobium and molybdenum with a body-centered cubic (BCC) lattice are observed within the composite. The formation of solid solutions caused by heating of the coating leads to convergence of the values of the linear thermal expansion coefficient and Young's modulus at the interface between the layers.

  1. Thermite reduction of Ta{sub 2}O{sub 5}/SiO{sub 2} powder mixtures for combustion synthesis of Ta-based silicides

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, C.L., E-mail: clyeh@fcu.edu.tw [Department of Aerospace and Systems Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan (China); Huang, Y.S. [Department of Aerospace and Systems Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan (China)

    2011-05-26

    Highlights: > Solid state combustion involving thermite reduction of Ta{sub 2}O{sub 5} and SiO{sub 2} was firstly performed for the formation of tantalum silicides, including TaSi{sub 2}, Ta{sub 5}Si{sub 3}, Ta{sub 2}Si, and Ta{sub 3}Si. > Two thermite mixtures, Al-Ta{sub 2}O{sub 5} and Al-Ta{sub 2}O{sub 5}-SiO{sub 2}, were adopted and their influence on the combustion characteristics and phase constituents of the final products was studied. > A high degree of phase evolution forming Al{sub 2}O{sub 3}-added TaSi{sub 2} and Ta{sub 5}Si{sub 3} was achieved by adopting the thermite mixture of Al-Ta{sub 2}O{sub 5} in the Ta-Si combustion system. > Variations of the combustion temperature and flame-front velocity with sample stoichiometry were presented. - Abstract: Tantalum silicides (including TaSi{sub 2}, Ta{sub 5}Si{sub 3}, Ta{sub 2}Si, and Ta{sub 3}Si) were prepared by solid state combustion of the Ta-Si reaction system involving thermite reduction of Ta{sub 2}O{sub 5} and SiO{sub 2}. The thermite-based combustion is self-sustaining and contributes to the in situ formation of tantalum silicides along with Al{sub 2}O{sub 3}. The combustion front temperature and propagation velocity increased with the extent of thermite reactions for the systems adopting the thermite mixture of Al-Ta{sub 2}O{sub 5}, while both of them decreased for those using Al, Ta{sub 2}O{sub 5}, and SiO{sub 2} as the thermite reagents. Among four silicide compounds, a better degree of phase evolution was observed for TaSi{sub 2} and Ta{sub 5}Si{sub 3} when compared to that of Ta{sub 2}Si and Ta{sub 3}Si. The XRD analysis indicated the presence of a small amount of Ta{sub 5}Si{sub 3} in the TaSi{sub 2}-Al{sub 2}O{sub 3} composite. On the formation of Ta{sub 5}Si{sub 3} with Al{sub 2}O{sub 3}, the minor phase was Ta{sub 2}Si for the Al-Ta{sub 2}O{sub 5}-containing system. In addition to Ta{sub 2}Si, an intermediate phase TaSi{sub 2} was detected when the Al-Ta{sub 2}O{sub 5}-SiO{sub 2} mixture was

  2. BASIC program to compute uranium density and void volume fraction in laboratory-scale uranium silicide aluminum dispersion plate-type fuel

    International Nuclear Information System (INIS)

    BASIC program simple and easy to operate has been developed to compute uranium density and void volume fraction for laboratory-scale uranium silicide aluminum dispersion plate-type fuel, so called miniplate. An example of the result of calculation is given in order to demonstrate how the calculated void fraction correlates with the microstructural distribution of the void in a miniplate prepared in our laboratory. The program is also able to constitute data base on important parameters for miniplates from experimentally-determined values of density, weight of each constituent and dimensions of miniplates. Utility programs pertinent to the development of the BASIC program are also given which run in the popular MS-DOS environment. All the source lists are attached and brief description for each program is made. (author)

  3. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    Energy Technology Data Exchange (ETDEWEB)

    1988-07-01

    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  4. Experimental realization of two-dimensional boron sheets

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Zhong, Qing; Li, Wenbin; Li, Shuai; Li, Hui; Cheng, Peng; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-06-01

    A variety of two-dimensional materials have been reported in recent years, yet single-element systems such as graphene and black phosphorus have remained rare. Boron analogues have been predicted, as boron atoms possess a short covalent radius and the flexibility to adopt sp2 hybridization, features that favour the formation of two-dimensional allotropes, and one example of such a borophene material has been reported recently. Here, we present a parallel experimental work showing that two-dimensional boron sheets can be grown epitaxially on a Ag(111) substrate. Two types of boron sheet, a β12 sheet and a χ3 sheet, both exhibiting a triangular lattice but with different arrangements of periodic holes, are observed by scanning tunnelling microscopy. Density functional theory simulations agree well with experiments, and indicate that both sheets are planar without obvious vertical undulations. The boron sheets are quite inert to oxidization and interact only weakly with their substrate. We envisage that such boron sheets may find applications in electronic devices in the future.

  5. Spontaneous Boron-doping of Graphene at Room Temperature

    Science.gov (United States)

    Pan, Lida; Que, Yande; Du, Shixuan; Gao, Hongjun; Pantelides, Sokrates T.

    2015-03-01

    Doping graphene with boron or nitrogen is an effective way to modify its electronic properties. However, the reaction barrier for introducing these impurities is quite high, making the doping process difficult. In this work, we propose a low-energy reaction route derived from first-principles calculations and subsequently validated by experiments. The calculations show that, when graphene is placed on a ruthenium substrate and exposed to atomic boron, boron atoms can incorporate substitutionally into the graphene sheet with an energy barrier about 0.1 eV, displacing carbon atoms below the graphene sheet where they migrates away. This result suggests that spontaneous doping by boron can take place at room temperature. Following the prediction, we grew high-quality graphene on the Ru(0001) surface and then expose it to B2H6 which decomposes into atomic boron. XPS and STM results indicate that boron dopes graphene substantially without disturbing the graphene lattice, confirming the theoretical predictions. Doping by nitrogen and co-doping by B and N will also be discussed.

  6. Boron biodistribution after boronophenylalanine-fructose (BPA-F) infusion

    Energy Technology Data Exchange (ETDEWEB)

    Kallio, M.; Kulvik, M.; Laakso, J.; Ruokonen, I.; Vaehaetalo, J.; Faerkkilae, M. [University of Helsinki (Finland); Rasilainen, M.; Jaerviluoma, E. [Helsinki University Central Hospital, Pharmacy, Helsinki (Finland)

    2000-10-01

    In vivo dynamic tissue boron concentration measurements are not available for BNCT in clinical settings. Whole blood boron concentrations and converting factors are currently used in stead to estimate the boron concentrations in the target tissues and the ensuing radiation doses. We studied with ICP-AES the boron concentrations in blood after 2 hour intravenous infusions of BPA-F in 8 patients (290 mg/kg). As BPA-F is water soluble we calculated respective doses per lean body weight (LBW) (360 - 471 mg/kg) - the peak plasma concentrations and area under plasma boron concentration time curve correlated with the mg/LBW dose, but not with dose per skin surface area (mg/m{sup 2}). The mean boron concentrations in plasma, whole blood and red cells at the infusion were 32.1 {+-} 3.3, 23.3 {+-} 2.4 and 9.5 {+-} 2.8, respectively. LBW doses should be considered to ensure more homogenous dosing and BNCT irradiation. (author)

  7. Lattice vibrations of icosahedral boron-rich solids

    Energy Technology Data Exchange (ETDEWEB)

    Beckel, C.L.; Yousaf, M. (The University of New Mexico, Albuquerque, New Mexico 87131 (United States))

    1991-07-01

    The rhombohedral lattices for {alpha}-boron, boron arsenide, and boron phosphide are each of D{sub 3d} symmetry and have bases that include B{sub 12} icosahedra. Boron carbide with B{sub 4}C stoichiometry has near-D{sub 3d} symmetry and is almost certainly composed of B{sub 11}C icosahedra and C-B-C chains. Comparable classical force field models are applied to each of these crystals to correlate q=0 phonon structure with experimental Raman and IR spectra. We here describe our methods and contrast interaction strengths for different materials. Vibrations are correlated in the different crystals through normal mode eigenvector expansions. Acoustic wave velocities from Brillouin zone dispersion curves in two distinct symmetry-axis directions are presented and contrasted for {alpha}-boron and B{sub 12}As{sub 2}. The origin of lines with anomalous polarization and width in {alpha}-boron, B{sub 12}As{sub 2}, and B{sub 12}P{sub 2} is considered.

  8. Colorimetric determination of Boron-10 in macromolecular delivery agents

    International Nuclear Information System (INIS)

    A polyglycerol with dendritic structure (PGLD) was synthesized by the ring opening polymerization of deprotonated glycidol using a polyglycerol as core functionality in a step-growth process denominated divergent synthesis. After PGLD reaction with 10B-enriched boric acid there was a marked increase in the bulk viscosity of the PGLD dendrimer evidencing the polyester formation. Gel permeation chromatography (GPC) analysis was used to characterize the molecular weight and the polydispersivity of the synthesized PGLD dendrimer. A dendritic polyglycerol structure with Mn value of 16.7 kDa and a narrow polydispersivity (Mw/Mn = 1.05) was obtained in this work. 1H-NMR and 13C-NMR measurements were employed to assess the degree of branching (DB) in PGLD. The DB of 0.85 indicates the tendency of a dentritic structure for the PGLD synthesized in this work. The boron-10 concentration was dependent of the PGLD generation. A selective reagent, curcumine, was studied for spectrophotometric determination of boron in polyglycerol dendrimers. Boron reacts with curcumine to form a complex, which has a maximum absorption peak at 552 nm. Under the optimal conditions, Beer's law was obeyed over the range 0∼20 μg of boron in 25 mL of solution. The biological assays indicate the PGLD-B with boron-10 concentration of 25 mg10B/gPGLD as the most promising macromolecule enriched with boron-10 for the BNCT therapy. (author)

  9. Boron uptake, localization, and speciation in marine brown algae.

    Science.gov (United States)

    Miller, Eric P; Wu, Youxian; Carrano, Carl J

    2016-02-01

    In contrast to the generally boron-poor terrestrial environment, the concentration of boron in the marine environment is relatively high (0.4 mM) and while there has been extensive interest in its use as a surrogate of pH in paleoclimate studies in the context of climate change-related questions, the relatively depth independent, and the generally non-nutrient-like concentration profile of this element have led to boron being neglected as a potentially biologically relevant element in the ocean. Among the marine plant-like organisms the brown algae (Phaeophyta) are one of only five lineages of photosynthetic eukaryotes to have evolved complex multicellularity. Many of unusual and often unique features of brown algae are attributable to this singular evolutionary history. These adaptations are a reflection of the marine coastal environment which brown algae dominate in terms of biomass. Consequently, brown algae are of fundamental importance to oceanic ecology, geochemistry, and coastal industry. Our results indicate that boron is taken up by a facilitated diffusion mechanism against a considerable concentration gradient. Furthermore, in both Ectocarpus and Macrocystis some boron is most likely bound to cell wall constituent alginate and the photoassimilate mannitol located in sieve cells. Herein, we describe boron uptake, speciation, localization and possible biological function in two species of brown algae, Macrocystis pyrifera and Ectocarpus siliculosus. PMID:26679972

  10. Experimental realization of two-dimensional boron sheets.

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Zhong, Qing; Li, Wenbin; Li, Shuai; Li, Hui; Cheng, Peng; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-06-01

    A variety of two-dimensional materials have been reported in recent years, yet single-element systems such as graphene and black phosphorus have remained rare. Boron analogues have been predicted, as boron atoms possess a short covalent radius and the flexibility to adopt sp(2) hybridization, features that favour the formation of two-dimensional allotropes, and one example of such a borophene material has been reported recently. Here, we present a parallel experimental work showing that two-dimensional boron sheets can be grown epitaxially on a Ag(111) substrate. Two types of boron sheet, a β12 sheet and a χ3 sheet, both exhibiting a triangular lattice but with different arrangements of periodic holes, are observed by scanning tunnelling microscopy. Density functional theory simulations agree well with experiments, and indicate that both sheets are planar without obvious vertical undulations. The boron sheets are quite inert to oxidization and interact only weakly with their substrate. We envisage that such boron sheets may find applications in electronic devices in the future. PMID:27219700

  11. Adsorption of boron on a Mo(110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Magkoev, Tamerlan T; Turiev, Anatolij M; Tsidaeva, Natal' ja I; Panteleev, Dmitrij G [Department of Physics, University of North Ossetia, Kesaev 121-83, Vladikavkaz 362020 (Russian Federation); Vladimirov, Georgij G; Rump, Gennadij A [Department of Physics, University of Saint Petersburg, Uljanovskaya 1-1, Saint Petersburg 198904 (Russian Federation)], E-mail: t_magkoev@mail.ru

    2008-12-03

    Adsorption of boron atoms in submonolayer to multilayer coverage on atomically clean Mo(110) surfaces has been studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and work function measurements. According to Auger results there is a layer-by-layer growth mode of the film on the substrate held at room temperature. In the submonolayer region the work function gradually increases with boron coverage until a saturation value of 5.8 eV is achieved after completion of the first monoatomic layer. The B-Mo(110) adsorbate system formed on the substrate at room temperature is not stable, dominated by a strong tendency of the boron atoms to diffuse into the bulk of the crystal. The latter is manifested by dramatic Mo(110) surface plasmon mode transformation upon boron adsorption, presumably as a result of penetration of boron atoms into the topmost substrate layer even at T = 300 K. Slight annealing up to 450 K facilitates this trend, leading to total dissolution of deposited boron atoms in the bulk of the crystal under further annealing, restoring the initial state of the Mo(110) surface after achieving a temperature of approximately 2000 K.

  12. Adsorption of boron on a Mo(110) surface

    Science.gov (United States)

    Magkoev, Tamerlan T.; Turiev, Anatolij M.; Tsidaeva, Natal'ja I.; Panteleev, Dmitrij G.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-12-01

    Adsorption of boron atoms in submonolayer to multilayer coverage on atomically clean Mo(110) surfaces has been studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and work function measurements. According to Auger results there is a layer-by-layer growth mode of the film on the substrate held at room temperature. In the submonolayer region the work function gradually increases with boron coverage until a saturation value of 5.8 eV is achieved after completion of the first monoatomic layer. The B-Mo(110) adsorbate system formed on the substrate at room temperature is not stable, dominated by a strong tendency of the boron atoms to diffuse into the bulk of the crystal. The latter is manifested by dramatic Mo(110) surface plasmon mode transformation upon boron adsorption, presumably as a result of penetration of boron atoms into the topmost substrate layer even at T = 300 K. Slight annealing up to 450 K facilitates this trend, leading to total dissolution of deposited boron atoms in the bulk of the crystal under further annealing, restoring the initial state of the Mo(110) surface after achieving a temperature of approximately 2000 K.

  13. Structural Modification in Carbon Nanotubes by Boron Incorporation

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2009-01-01

    Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

  14. High order boron transport scheme in TRAC-BF1

    International Nuclear Information System (INIS)

    In boiling water reactors (BWR), unlike pressurized water reactors (PWR) in which the reactivity control is accomplished through movement of the control rods and boron dilution, the importance of boron transport lies in maintaining the core integrity during ATWS-kind severe accidents in which under certain circumstances a boron injection is required. This is the reason for implementing boron transport models thermal-hydraulic codes as TRAC-BF1, RELAP5 and TRACE, bringing an improvement in the accuracy of the simulations. TRAC-BF1 code provides a best estimate analysis capability for the analysis of the full range of postulated accidents in boiling water reactors systems and related facilities. The boron transport model implemented in TRAC-BF1 code is based on a calculation according to a first order accurate upwind difference scheme. There is a need in reviewing and improving this model. Four numerical schemes that solve the boron transport model have been analyzed and compared with the analytical solution that provides the Burgers equation. The studied numerical schemes are: first order Upwind, second order Godunov, second-order modified Godunov adding physical diffusion term and a third-order QUICKEST using the ULTIMATE universal limiter (UL). The modified Godunov scheme has been implemented in TRAC-BF1 source code. The results using these new schemes are presented in this paper. (author)

  15. Functionalization and cellular uptake of boron carbide nanoparticles. The first step toward T cell-guided boron neutron capture therapy.

    Science.gov (United States)

    Mortensen, M W; Björkdahl, O; Sørensen, P G; Hansen, T; Jensen, M R; Gundersen, H J G; Bjørnholm, T

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded with boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy.

  16. Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Vast, N

    1999-07-01

    The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  17. Boron transport in Eucalyptus. 2. Identification in silico of a putative boron transporter for xylem loading in eucalypt

    Directory of Open Access Journals (Sweden)

    Douglas Silva Domingues

    2005-01-01

    Full Text Available Boron (B is a low mobility plant micronutrient whose molecular mechanisms of absorption and translocation are still controversial. Many factors are involved in tolerance to Boron excess or deficiency. Recently, the first protein linked to boron transport in biological systems, BOR1, was characterized in Arabidopsis thaliana. This protein is involved in boron xylem loading and is similar to bicarbonate transporters found in animals. There are indications that BOR1 is a member of a conserved protein family in plants. In this work, FORESTS database was used to identify sequences similar to this protein family, looking for a probable BOR1 homolog in eucalypt. We found five consensus sequences similar to BOR1; three of them were then used in multiple alignment analysis. Based on amino acid similarity and in silico expression patterns, a consensus sequence was identified as a candidate BOR1 homolog, helping deeper experimental assays that could identify the function of this protein family in Eucalyptus.

  18. Silicides for VLSI applications

    CERN Document Server

    Murarka, Shyam P

    1983-01-01

    Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.

  19. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida.

    Science.gov (United States)

    Rámila, Consuelo D P; Contreras, Samuel A; Di Domenico, Camila; Molina-Montenegro, Marco A; Vega, Andrea; Handford, Michael; Bonilla, Carlos A; Pizarro, Gonzalo E

    2016-11-01

    Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500mg/L), and within its tissues (>5000mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems. PMID:27322905

  20. Effect of boron fertilization of apple trees (Malus domestica Borth. on yield and fruit quality

    Directory of Open Access Journals (Sweden)

    Paweł Wójcik

    2013-12-01

    Full Text Available Aim of this work was to examine effect of boron fertilization on yield of apple trees and fruit quality. The experiment was carried out during 1994-1996 in Dąbrowice Experimental Orchard belonging to Research Institute of Pomology and Floriculture in Skiemiewice, on Š a m p i o n cultivar, grafted on M26 rootstock. Trees were planted in the autumn of 1991 at the distance 4 x 2,5 m, on sandy-loam soil. Before starting and during carrying out the study there were not visual symptoms of boron deficiency. In the experiment applied boron fertilization to the soil at the dose 2 g B per tree or three times boron sprays before or after bloom at the dose 0,67 g B per tree. Apple trees without any boron fertilization were served as a control. Results of experiment showed that only boron sprays after bloom increased fruit set and yield. There were no significant differences between treatments in fruit maturity at harvest, fruit weight losses dunng storage, apple number infected by Penicillium, Monilina and Botrytis cinerea. Boron sprays after bloom increased firmness of apples after storage and decreased sensibility to bitter pit, internal breakdown and Gloeosporium-rot. All boron treatments increased boron concentration in apples in comparison with control ones. However, the highest increase of boron concentration in apples was observed when boron sprays were done after bloom and soil boron application. Only boron sprays applied after bloom increased calcium concentration in apples.