WorldWideScience

Sample records for boron silicides

  1. Boron site preference in ternary Ta and Nb boron silicides

    International Nuclear Information System (INIS)

    X-ray single crystal (XSC) and neutron powder diffraction data (NPD) were used to elucidate boron site preference for five ternary phases. Ta3Si1−xBx (x=0.112(4)) crystallizes with the Ti3P-type (space group P42/n) with B-atoms sharing the 8g site with Si atoms. Ta5Si3−x (x=0.03(1); Cr5B3- type) crystallizes with space group I4/mcm, exhibiting a small amount of vacancies on the 4a site. Both, Ta5(Si1−xBx)3, x=0.568(3), and Nb5(Si1−xBx)3, x=0.59(2), are part of solid solutions of M5Si3 with Cr5B3-type into the ternary M–Si–B systems (M=Nb or Ta) with B replacing Si on the 8h site. The D88-phase in the Nb–Si–B system crystallizes with the Ti5Ga4-type revealing the formula Nb5Si3B1−x (x=0.292(3)) with B partially filling the voids in the 2b site of the Mn5Si3 parent type. - Graphical abstract: The crystal structures of a series of compounds have been solved from X-ray single crystal diffractometry revealing details on the boron incorporation. Highlights: ► Structure of a series of compounds have been solved by X-ray single crystal diffractometry. ► Ta3(Si1−xBx) (x=0.112) crystallizes with the Ti3P-type, B and Si atoms randomly share the 8g site. ► Structure of Nb5Si3B1−x (x=0.292; Ti5Ga4-type) was solved from NPD.

  2. Selective silicide or boride film formation by reaction of vapor phase TiCl4 with silicon or boron

    International Nuclear Information System (INIS)

    Methods for selectively forming titanium silicide and titanium boride by vapor phase reaction of titanium chloride precursors with silicon or boron substrate surfaces are examined. By passing TiCl4 through a heated chamber packed with titanium metal turnings within the reactor tube, a reduced titanium halide is generated. It was found that the silicide or boride formation in the reactor can thus be controlled at a much lower temperature. Also, excessive silicon erosion normally encountered at the higher operating temperature (> 775 degrees C) required for the direct TiCl4 reaction is minimized. Characterization of the resulting films was conducted by use of scanning and transmission electron microscopy, sheet resistance measurements, and x-ray diffraction

  3. Effect of copper on phase formation process in boron-silicide layers on niobium and tantalum

    International Nuclear Information System (INIS)

    The influence of copper additions on regularities of growth, phase- and structure formation of borosilicide coatings produced by siliconizing preliminarily borated niobium and tantalum was studied. Rolled sheets of niobium and tantalum with impurity content less than 0.02 % (mass) were used for the coating application. Copper introduction into saturating medium affects growth rate, phase- and structure formation of silicide phases on niobium and tantalum. It also permits obtaining alternating boride and silicide layers, which is probably the only way of the composition fabrication, which can be of interest, when developing coatings with preset properties

  4. Assessment of processing routes and strength of a 3-phase molybdenum boron silicide (Mo5Si3-Mo5SiB2-Mo3Si)

    International Nuclear Information System (INIS)

    High temperature components such as furnace elements are often fabricated from MoSi2. Molybdenum boron silicides consisting of Mo5Si3, Mo3Si, and Mo5SiB2 are an interesting alternative to MoSi2. At present, the mechanical properties of these new Mo-Si-B intermetallics have not been fully explored. One reason for this is simply the unavailability of sufficiently large parts with a sound microstructure. The goal of this work was therefore to explore the processing of these materials by several different routes such as powder and ingot metallurgy, and examine the resulting microstructures. In addition, some post-processing (hot isostatic forging, extrusion) was carried out. The flexure strength of the differently processed materials was characterized and interpreted in terms of their microstructures

  5. Reprocessing RERTR silicide fuels

    International Nuclear Information System (INIS)

    The Reduced Enrichment Research and Test Reactor Program is one element of the United States Government's nonproliferation effort. High-density, low-enrichment, aluminum-clad uranium silicide fuels may be substituted for the highly enriched aluminum-clad alloy fuels now in use. Savannah River Laboratory has performed studies which demonstrate reprocessability of spent RERTR silicide fuels at Savannah River Plant. Results of dissolution and feed preparation tests and solvent extraction processing demonstrations with both unirradiated and irradiated uranium silicide fuels are presented

  6. Boron

    International Nuclear Information System (INIS)

    The trace element boron (B) is of interest in reclamation situations for several reasons. It plays an essential through largely unidentified role in the growth of higher plants. In argronomic situations B deficiencies are common, and deficiencies in reclamation situations have been suggested but not documented. Among micronutrients, B is unique because the range from deficient concentrations to toxic concentrations either in the soil solution or in plant tissue is narrower than for any other micronutrient. In reclamation situations excessive amounts of B can occur in the soil or in near-surface mining wastes and thus interfere with reclamation objectives, especially in arid and semiarid regions. Also, B is mobile and appears subject to both upward transport (and possible contamination of overlying material) and downward transport (and possible contamination of surface water and groundwater)

  7. Metal silicide nanowires

    Science.gov (United States)

    Chen, Lih-Juann; Wu, Wen-Wei

    2015-07-01

    The growth, properties and applications of metal silicide nanowires (NWs) have been extensively investigated. The investigations have led to significant advance in the understanding of one-dimensional (1D) metal silicide systems. For example, CoSi is paramagnetic in bulk form, but ferromagnetic in NW geometry. In addition, the helimagnetic phase and skyrmion state in MnSi are stabilized by NW morphology. The influencing factors on the growth of silicide phase have been elucidated for Ni-Si, Pt-Si, and Mn-Si systems. Promising results were obtained for spintronics, non-volatile memories, field emitter, magnetoresistive sensor, thermoelectric generator and solar cells. However, the main thrust has been in microelectronic devices and integrated circuits. Transistors of world-record small size have been fabricated. Reconfigurable Si NW transistors, dually active Si NW transistors and circuits with equal electron and hole transport have been demonstrated. Furthermore, multifunctional devices and logic gates with undoped Si NWs were reported. It is foreseen that practical applications will be realized in the near future.

  8. High temperature structural silicides

    International Nuclear Information System (INIS)

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi2-based materials, which are borderline ceramic-intermetallic compounds. MoSi2 single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi2 possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi2-Si3N4 composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi2-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing

  9. Investigation of diffusion silicide coatings interaction with substrate out of the molybdenum alloy TsM6 at elevated temperatures

    International Nuclear Information System (INIS)

    Researched have been the growth kinetics, structure and composition of the intermediate phases, being formed during the reaction of the MoSi2-based coating with the TsM6 molybdenum alloy at 1300, 1600 and 1800 deg C in the vacuum and in the inert gas medium. It is established that during the annealing of the TsM6 alloy silicide coatings in the 1300-1800 deg C temperature range, the molybdenum disilicide reacts with the alloy base, whereupon lower-silicide-based phases appear. The annealing of the MoB boron-substratum silicide coatings causes the formation of the Mo2B phase at the alloy-MoB boundary and a Mosub(x)(BSi)sub(y) complicated composition phase at the MoB-Mo5Si3 boundary

  10. On Silicides in High Temperature Titanium Alloys

    Directory of Open Access Journals (Sweden)

    C. Ramachandra

    1986-04-01

    Full Text Available High temperature titanium alloys like IMI 685 contain small amounts of silicon (~ 0.25 wt. per cent to improve creep resistance. Different types of silicides, namely Ti5Si3 (TiZr5Si3(S1 and (TiZr6 Si3 (S2, have been observed to precipitate in various silicon-bearing titanium alloys depending upon their composition and heat treatment. The precipitation of silicides, their orientation relationship with the matrix in different alloys, and the beneficial influence of thermo-mechanical treatment on the distribution of silicides have been pointed out. The effect of silicides on mechanical properties and fracture of the commercial alloy IMI 685 is also indicated.

  11. LEU silicide programs at Babcock and Wilcox

    International Nuclear Information System (INIS)

    The low enriched silicide development project at Babcock and Wilcox has matured into a production operation that has resulted in the completion of fuel elements for three research reactors; ORR, R-2 Studsvik and SAPHIR. Characteristic anomalies of silicide fuel which make the fabrication of fuel plates and elements more difficult than UAlx, have either been avoided, eliminated or significantly improved. One such anomaly is the reaction between uranium silicide fuel and aluminum matrix material. A detailed analysis was performed to characterize the extent of this reaction. Data suggests that a solid state diffusion of aluminum atoms into the uranium silicide lattice results in the formation of several intermediate Al-Si-U phases before forming a stable UAl4 phase

  12. Nanoscale contact engineering for Si/Silicide nanowire devices

    OpenAIRE

    Lin, Yung-chen

    2012-01-01

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transfor...

  13. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, G. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom)]. E-mail: g.srinivasan@ee.qub.ac.uk; Bain, M.F. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Bhattacharyya, S. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Baine, P. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Armstrong, B.M. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); Gamble, H.S. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom); McNeill, D.W. [Northern Ireland Semiconductor Research Centre, School of Electrical and Electronic Engineering, Queen' s University, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland (United Kingdom)

    2004-12-15

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si{sub 1-} {sub x} Ge {sub x} , with 0 {<=}x {<=} 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi{sub 2} and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance {rho} {sub c} values 3 x 10{sup -7} ohm cm{sup 2} and 6 x 10{sup -7} ohm cm{sup 2} obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in {rho} {sub c} for both dopant types. The boron doped SiGe exhibits a reduction in {rho} {sub c} from 3 x 10{sup -7} to 5 x 10{sup -8} ohm cm{sup 2} as Ge fraction is increased from 0 to 0.3. The reduction in {rho} {sub c} has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of {rho} {sub c} to Ge fraction with a lowest value in this work of 3 x 10{sup -7} ohm cm{sup 2} for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone.

  14. Robust micromachining of compliant mechanisms using silicides

    International Nuclear Information System (INIS)

    We introduce an innovative sacrificial surface micromachining process that enhances the mechanical robustness of freestanding microstructures and compliant mechanisms. This process facilitates the fabrication, and improves the assembly yield of the out-of-plane micro sensors and actuators. Fabrication of a compliant mechanism using conventional sacrificial surface micromachining results in a non-planar structure with a step between the structure and its anchor. During mechanism actuation or assembly, stress accumulation at the structure step can easily exceed the yield strength of the material and lead to the structure failure. Our process overcomes this topographic issue by virtually eliminating the step between the structure and its anchor, and achieves planarization without using chemical mechanical polishing. The process is based on low temperature and post-CMOS compatible nickel silicide technology. We use a layer of amorphous silicon (a-Si) as a sacrificial layer, which is locally converted to nickel silicide to form the anchors. High etch selectivity between silicon and nickel silicide in the xenon difluoride gas (sacrificial layer etchant) enables us to use the silicide to anchor the structures to the substrate. The formed silicide has the same thickness as the sacrificial layer; therefore, the structure is virtually flat. The maximum measured step between the anchor and the sacrificial layer is about 10 nm on a 300 nm thick sacrificial layer. (paper)

  15. New silicides for new niobium protective coatings

    International Nuclear Information System (INIS)

    Efforts to improve at high temperature the oxidation resistance of pure niobium or commercial niobium alloys have led to the development of a pack cementation process for the co-deposition of Si, Ti, Cr and Fe. Owing to the knowledge of the quaternary Nb(Ti)-T-Cr-Si phase diagrams (T=Fe or Co or Ni) and of the crystallographic features of phases present in the silicide coatings, new protective coatings have been applied on pure niobium and Cb752 alloy. The results of the crystallographic study of three new silicides isostructural with Nb3Fe3CrSi6, in which Nb is substituted by Ti and Fe by Co or Ni are reported. The oxidation performances of two new coatings mainly consisting of such a silicide are also outlined. (orig.)

  16. On Silicides in High Temperature Titanium Alloys

    OpenAIRE

    Ramachandra, C.; Vakil Singh; P. Rama Rao

    1986-01-01

    High temperature titanium alloys like IMI 685 contain small amounts of silicon (~ 0.25 wt. per cent) to improve creep resistance. Different types of silicides, namely Ti5Si3 (TiZr)5Si3(S1) and (TiZr)6 Si3 (S2), have been observed to precipitate in various silicon-bearing titanium alloys depending upon their composition and heat treatment. The precipitation of silicides, their orientation relationship with the matrix in different alloys, and the beneficial influence of thermo-mechanical treatm...

  17. On the kinetics of platinum silicide formation

    NARCIS (Netherlands)

    Faber, Erik J.; Wolters, Rob A.M.; Schmitz, Jurriaan

    2011-01-01

    In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline <100> silicon is investigated via in situ resistance measurements under isothermal (197–275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear r

  18. Challenges of nickel silicidation in CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Breil, Nicolas [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Lavoie, Christian [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Ozcan, Ahmet [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Baumann, Frieder [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Klymko, Nancy [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Nummy, Karen [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Sun, Bing [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Yu, Jian [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Zhu, Frank [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Narasimha, Shreesh [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Chudzik, Michael [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States)

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  19. Synthesis and design of silicide intermetallic materials

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P. [Los Alamos National Lab., NM (United States)] [and others

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  20. Irradiation behavior of miniature experimental uranium silicide fuel plates

    International Nuclear Information System (INIS)

    Uranium silicides, because of their relatively high uranium density, were selected as candidate dispersion fuels for the higher fuel densities required in the Reduced Enrichment Research and Test Reactor (RERTR) Program. Irradiation experience with this type of fuel, however, was limited to relatively modest fission densities in the bulk from, on the order of 7 x 1020 cm-3, far short of the approximately 20 x 1020 cm-3 goal established for the RERTR program. The purpose of the irradiation experiments on silicide fuels on the ORR, therefore, was to investigate the intrinsic irradiation behavior of uranium silicide as a dispersion fuel. Of particular interest was the interaction between the silicide particles and the aluminum matrix, the swelling behavior of the silicide particles, and the maximum volume fraction of silicide particles that could be contained in the aluminum matrix

  1. Palladium silicide - a new contact for semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd2Si is discussed. A palladium film 100A thick is deposited at 3000C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

  2. Formation and properties of nanometer-thick platinum silicide layers

    OpenAIRE

    Conforto, Egle

    1996-01-01

    Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection in the near infrared. We have studied the formation of thin platinum silicide films and their electrical properties as a function of the annealing temperature in presence of an interfacial native sili...

  3. Production of Mo-99 using low-enriched uranium silicide

    International Nuclear Information System (INIS)

    Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAlx alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U3Si2 miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed

  4. Fusion silicide coatings for tantalum alloys.

    Science.gov (United States)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  5. Microanalysis of tungsten silicide/polysilicon interface

    International Nuclear Information System (INIS)

    The presence of a thin (10-30 Angstrom) oxide (native oxide) layer on a silicon surface prior to the deposition of another film on that surface can contribute to difficulties with subsequent device processing steps, e.g. contact metallization and high-temperature annealing or oxidation. Thus the in situ process capability of native oxide removal affords advantage over the conventional method of aqueous hydrofluoric acid cleaning prior to a film deposition step. The paper describes such a technique, in which an in situ pre-deposition clean with C2F6 gas, using reactive ion etching (RIE) prior to tungsten silicide deposition, is employed. This technique allows post-silicide deposition high-temperature heat treatment and wet oxidation without loss of film adhesion or other obvious degradative effects. We also report the use of Secondary Ion Mass Spectrometry (SIMS) to show that this procedure has been effective in the removal of the oxide layer prior to silicide deposition. This study includes definition of the RIE etch parameters which provide acceptable etch selectivity of the oxide to silicon, and avoidance of excessive fluoropolymer formation on the silicon surface

  6. Silicides and germanides for nano-CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kittl, J.A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)], E-mail: kittlj@imec.be; Opsomer, K.; Torregiani, C.; Demeurisse, C.; Mertens, S.; Brunco, D.P.; Van Dal, M.J.H.; Lauwers, A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2008-12-05

    An overview of silicides and germanides for nano-CMOS applications is presented. The historical evolution describing the migration from the use of Ti silicide to Co silicide to Ni silicide as contacting material is first discussed. These changes in silicide material were mainly motivated by the inability to form the target low resistivity silicide phase in small structures due to low nucleation density. This issue was found first for the low resistivity C54 TiSi{sub 2} at linewidths below 200 nm and later for the low resistivity CoSi{sub 2}, at linewidths below 40 nm. A detailed description of scalability and thermal stability issues for NiSi is then presented. No nucleation issues were found in small structures for NiSi, which grows by diffusion or interface limited kinetics with Ni as main moving species. However, silicidation can be excessive in small structures due to Ni diffusion from surrounding areas, resulting in thicker films than targeted in small devices. This can be controlled by using a silicidation process with two rapid thermal processing steps, the first one to control the amount of Ni reacted and the second one to convert the silicide to the target low resistivity monosilicide phase. One of the main issues for applications of NiSi is its low thermal stability: thin NiSi films agglomerate at relatively low temperatures. The process window and thermal stability of Ni and Pt-based films reacted with Si, Si:Ge and Si:C substrates is reviewed. Addition of Ge is shown to degrade thermal stability while addition of C or Pt improves it. Contact resistivity considerations and implementation of dual band-edge silicides are discussed, as well as promising results for the extension of Ni-based silicides to future nodes. Finally a brief overview of germanides is presented discussing NiGe and PdGe as main candidates.

  7. High temperature protective silicide coatings for titanium-niobium alloys

    International Nuclear Information System (INIS)

    The accomplished investigation of heat resistance of silicide coatings on titanium - (30-50)% niobium alloys has revealed that the coatings ensure reliable corrosion protection up to 1100 deg due to formation of heat resistant disilicides and a silicon dioxide layer on alloy surface. Silicide coatings possess particular ductility

  8. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications

    Science.gov (United States)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  9. Infrared spectra of semiconducting silicides nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Baleva, M; Atanassov, A [Faculty of Physics, St. Kl. Ohridski University of Sofia, 5 J. Bourchier Blvd., 1164 Sofia (Bulgaria); Marinova, M [Solid State Physics Section, Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)], E-mail: baleva@phys.uni-sofia.bg

    2008-05-01

    The infrared absorption is studied of samples consisting of a Si matrix with unburied nanolayers of the semiconducting silicides {beta}-FeSi{sub 2} and Mg{sub 2}Si. Features additional to those due to the transversal optical phonons of the compounds are observed. The features are interpreted in the framework of the appearance of surface and interface phonon polaritons, which absorb the light. Insofar as the frequencies of the longitudinal optical (LO) phonon-polariton modes are close to those of the LO phonon frequencies, the infrared transmittance of nanolayers can be regarded as a method for direct determination of these frequencies.

  10. Thermoelectric performance of higher manganese silicide nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Saleemi, M. [Department of Materials and Nano Physics, KTH Royal Institute of Technology, Kista, Stockholm (Sweden); Famengo, A.; Fiameni, S.; Boldrini, S.; Battiston, S. [CNR, Institute for Energetics and Interphases (IENI-CNR), Corso Stati Uniti 4, I-35127 Padua (Italy); Johnsson, M. [Department of Materials and Environmental Chemistry, Stockholm University, Stockholm (Sweden); Muhammed, M.; Toprak, M.S. [Department of Materials and Nano Physics, KTH Royal Institute of Technology, Kista, Stockholm (Sweden)

    2015-01-15

    Highlights: • Fabrication of p-type higher manganese silicide by mechanical alloying. • Different concentrations Ytterbium (Yb) was used to form HMS nanocomposites. • HMS nanostructures were preserved by using spark plasma sintering (SPS). • HMS–Yb nanocomposites showed improved electrical performance. - Abstract: Higher manganese silicides (HMS) are proven to be promising candidates as p-type thermoelectric material in the temperature range of 400–700 K. In this work, a series of nanostructured (NS) bulk MnSi{sub 1.73} with different levels of Ytterbium inclusions were fabricated via ball milling and the solid state reaction was completed by spark plasma sintering (SPS). Nanopowders and SPS consolidated Yb–HMS nanocomposites (NC) were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to reveal the crystal structure and morphology respectively. High resolution transmission electron microscopy (HRTEM) coupled with energy dispersive X-ray spectroscopy (EDS) was used to investigate the material composition in bulk grains. Yb was observed to stay as nanoinclusions at the grain boundaries. TE transport properties, including Seebeck coefficient, electrical resistivity, and thermal diffusivity as well as charge carrier concentrations were evaluated. Thermal conductivity decreased with increasing Yb content, while the electrical conductivity improved for the highest Yb content. A highest figure of merit (ZT) of 0.42 at 600 °C was achieved for 1% Yb–HMS NC sample.

  11. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi2-monolayer and the Dy3Si5-multilayer on the Si(111) surface are investigated in comparison to the known ErSi2/Si(111) and Er3Si5/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented in the same

  12. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  13. Electroextraction of boron from boron carbide scrap

    International Nuclear Information System (INIS)

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron (10B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of 10B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron

  14. Thermal compatibility studies of unirradiated uranium silicide dispersed in aluminum

    International Nuclear Information System (INIS)

    Powder metallurgy dispersions of uranium silicides in an aluminum matrix have been developed by the international Reduced Enrichment for Research and Test Reactors program as a new generation of proliferation-resistant fuels. A major issue of concern is the compatibility of the fuel with the matrix material and the dimensional stability of this fuel type. A total of 45 miniplate-type fuel plates were annealed at 4000C for up to 1981 hours. A data base for the thermal compatibility of unirradiated uranium silicide dispersed in aluminum was established. No modification tested of a standard fuel plate showed any significant reduction of the plate swelling. The cause of the thermal growth of silicide fuel plates was determined to be a two-step process: (1) the reaction of the uranium silicide with aluminum to form U(AlSi)3 and (2) the release of hydrogen and subsequent creep and pillowing of the fuel plate. 9 references, 4 figures, 6 tables

  15. Phase transformations in Higher Manganese Silicides

    Energy Technology Data Exchange (ETDEWEB)

    Allam, A. [MADIREL, UMR 7246 CNRS - Universite Aix-Marseille, av Normandie-Niemen, 13397 Marseille Cedex 20 (France); IM2NP, UMR 7334 CNRS - Universite Aix-Marseille, av Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Boulet, P. [MADIREL, UMR 7246 CNRS - Universite Aix-Marseille, av Normandie-Niemen, 13397 Marseille Cedex 20 (France); Nunes, C.A. [Departamento de Engenharia de Materiais (DEMAR), Escola de Engenharia de Lorena (EEL), Universidade de Sao Paulo - USP, Caixa Postal 116, 12600-970 Lorena, Sao Paulo (Brazil); Sopousek, J.; Broz, P. [Masaryk University, Faculty of Science, Department of Chemistry, Kolarska 2, 611 37 Brno (Czech Republic); Masaryk University, Central European Institute of Technology, CEITEC, Kamenice 753/5, 625 00 Brno (Czech Republic); Record, M.-C., E-mail: m-c.record@univ-cezanne.fr [IM2NP, UMR 7334 CNRS - Universite Aix-Marseille, av Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

    2013-02-25

    Highlights: Black-Right-Pointing-Pointer The phase transitions of the Higher Manganese Silicides were investigated. Black-Right-Pointing-Pointer The samples were characterised by XRD, DTA and DSC. Black-Right-Pointing-Pointer Mn{sub 27}Si{sub 47} is the stable phase at room temperature and under atmospheric pressure. Black-Right-Pointing-Pointer At around 800 Degree-Sign C, Mn{sub 27}Si{sub 47} is transformed into Mn{sub 15}Si{sub 26}. Black-Right-Pointing-Pointer The phase transition is of a second order. - Abstract: This work is an investigation of the phase transformations of the Higher Manganese Silicides in the temperature range [100-1200 Degree-Sign C]. Several complementary experimental techniques were used, namely in situ X-ray Diffraction (XRD), Differential Thermal Analysis (DTA) and Differential Scanning Calorimetry (DSC). The evolution of both the lattice parameters and the thermal expansion coefficients was determined from in situ XRD measurements. The stability of the samples was investigated by thermal analysis (DTA) and Cp measurements (DSC). This study shows that Mn{sub 27}Si{sub 47} which is the stable phase at room temperature and under atmospheric pressure undergoes a phase transformation at around 800 Degree-Sign C. Mn{sub 27}Si{sub 47} is transformed into Mn{sub 15}Si{sub 26}. This phase transformation seems to be of a second order one. Indeed it was not evidenced by DTA and by contrast it appears on the Cp curve.

  16. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  17. Irradiation behavior of experimental miniature uranium silicide fuel plates

    International Nuclear Information System (INIS)

    Uranium silicides, because of their relatively high uranium density, were selected as candidate dispersion fuels for the higher fuel densities required in the Reduced Enrichment Research and Test Reactor (RERTR) Program. Irradiation experience with this type of fuel, however, was limited to relatively modest fission densities in the bulk form, on the order of 7 x 1020 cm-3, far short of he approximately 20 x 1020 cm-3 goal established for the RERTR Program. The purpose of the irradiation experiments on silicide fuels in the ORR, therefore, was to investigate the intrinsic irradiation behavior of uranium silicide as a dispersion fuel. Of particular interest was the interaction between the silicide particles and the aluminum matrix, the swelling behavior of the silicide particles, and the maximum volume fraction of silicide particles that could be contained in the aluminum matrix. The first group of experimental 'mini' fuel plates have recently reached the program's goal burnup and are in various stages of examination. Although the results to date indicate some limitations, it appears that within the range of parameters examined thus far the uranium silicide dispersion holds promise for satisfying most of the needs of the RERTR Program. The twelve experimental silicide dispersion fuel plates that were irradiated to approximately their goal exposure show the 30-vol % U3Si-Al plates to be in a stage of relatively rapid fission-gas-driven swelling at a fission density of 2 x 1020 cm-3. This fuel swelling will likely result in unacceptably large plate-thickness increases. The U3Si plates appear to be superior in this respect; however, they, too, are starting to move into the rapid fuel-swelling stage. Analysis of the currently available post irradiation data indicates that a 40-vol % dispersed fuel may offer an acceptable margin to the onset of unstable thickness changes at exposures of 2 x 1021 fission/cm3. The interdiffusion between fuel and matrix aluminum was found

  18. Plasmon dispersion in dysprosium silicide nanowires

    International Nuclear Information System (INIS)

    By depositing Dy at around half monolayer coverage on single domain Si(001) surfaces miscut by 4 towards [110], we have grown DySi2 nanowires in the submonolayer regime. Their plasmon spectrum has been studied by a combination of high resolution EELS and spot profile analysis of LEED in one instrument (ELS-LEED) which enables us to measure characteristic losses with high momentum resolution. Ultraclean conditions (P≤1 x 10-10 mbar during Dy deposition) allowed growth of high quality structures with minimal oxidation of Dy. Deposition of Dy at 500 C results in the formation of single DySi2 nanowires on each terrace, leaving the periodicity of the clean Si surface unchanged. In contrast, deposition at room temperature and subsequent annealing to 500 C reduces the average terrace width by up to 20%. Clearest results in EELS were obtained for a silicide layer with 0.4 ML of Dy deposited at 500 C. Broad loss features in the range between 0 and 1 eV with typical dipole characteristics were detected, their position being strongly dependent on momentum transfer. As expected these characteristic losses have no dispersion normal to the wires, while parallel to the wires the dispersion is non-linear and goes to zero at zero momentum transfer. Thus the typical behavior of onedimensional surface plasmons is found

  19. Submicron Features in Higher Manganese Silicide

    Directory of Open Access Journals (Sweden)

    Yatir Sadia

    2013-01-01

    Full Text Available The world energy crisis had increased the demand for alternative energy sources and as such is one of the topics at the forefront of research. One way for reducing energy consumption is by thermoelectricity. Thermoelectric effects enable direct conversion of thermal into electrical energy. Higher manganese silicide (HMS, MnSi1.75 is one of the promising materials for applications in the field of thermoelectricity. The abundance and low cost of the elements, combined with good thermoelectric properties and high mechanical and chemical stability at high temperatures, make it very attractive for thermoelectric applications. Recent studies have shown that Si-rich HMS has improved thermoelectric properties. The most interesting of which is the unusual reduction in thermal conductivity. In the current research, transmission (TEM and scanning (SEM electron microscopy as well as X-ray diffraction methods were applied for investigation of the govern mechanisms resulting in very low thermal conductivity values of an Si-rich HMS composition, following arc melting and hot-pressing procedures. In this paper, it is shown that there is a presence of sub-micron dislocations walls, stacking faults, and silicon and HMS precipitates inside each other apparent in the matrix, following a high temperature (0.9 Tm hot pressing for an hour. These are not just responsible for the low thermal conductivity values observed but also indicate the ability to create complicate nano-structures that will last during the production process and possibly during the application.

  20. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  1. Reaction layers structure of silicide coatings on niobium alloys

    International Nuclear Information System (INIS)

    This paper reports on fused silicide coatings that are used to protect niobium alloys against high temperature oxidation. Quantitative electron microprobe analysis was used to characterize the complex multilayer structure of Si-20w/oFE-20w/oCR fused silicide coating on four niobium containing alloys: niobium, Cb752, WC3009, and Nb-46.5 Ti. The outer coating layer structure on all four alloys was similar, consisting of either two or three phases. The three phase outer coating layer on the niobium, WC3009, and the Nb-Ti substrate alloys was determined to be made of two MSi phases and one MSi2 phase. This outer MSi2 phase contained base alloy elements. Coated samples were compared using cyclic oxidation testing. The fused silicide coating structure and protectiveness were determined to be a function of the base alloy composition

  2. Oxidation resistance of composite silicide coatings on niobium

    International Nuclear Information System (INIS)

    This paper reports the oxidation of NbSi2-MoSi2 composite silicide coatings produced by diffusive siliconizing of molybdenum films on a niobium surface. Molybdenum-coated niobium was siliconized and an x-ray microspectral analysis of the composite silicide coating showed the phase composition to be an ca 80-um-thick outer molybdenum disilicide film with a characteristic coarsely crystalline columnar structure, and inner ca 20-um film of niobium disilicide consisting of the tiny columnar crystals, and a substrate/coating interface comprising a thin, 2-3 um film of lower silicide, i.e., Nb5Si3. The average grain sizes, unit cell parameters, and x-ray determined densities of the Mo films obtained by various methods are shown

  3. Determination of boron content in boron carbide, boron nitride and amorphous boron

    International Nuclear Information System (INIS)

    In the present article an analyzing method of determination of boron content in boron carbide, boron nitride and amorphous boron described. Examined samples were digested with potassium hydroxide and potassium nitrate in nickel crucible and the boron contents determined subsequently by an alcalimetric titration of boric acid in presence of mannite resp. sorbite. (author)

  4. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    OpenAIRE

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α- B/BxSi stack have been studied by fabricating and measuring diodes where the B depos...

  5. Transition Metal Silicide Nanowires Growth and Electrical Characterization

    Institute of Scientific and Technical Information of China (English)

    PENG Zu-Lin; LIANG S.; DENG Luo-Gen

    2009-01-01

    We report the characterization of self-assembled epitaxially grown transition metal,Fe,Co,Ni,silicide nanowires(TM-NW)growth and electrical transport properties.NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm,and several micrometers in length.NW orientations strongly depend on substrate crystal orientation,and follow the substrate symmetry.By using conductive-AFM(c-AFM),the electron transport properties of one single NW were measured,the resistivity of crystalline nickel silicide NW was estimated to be 2×10~(-2) Ω·cm.

  6. Oxidation behavior of molybdenum silicides and their composites

    International Nuclear Information System (INIS)

    A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo5Si3 alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi2-Si3N4 composites that contained 20--80 vol.% Si3N4 were evaluated at 500--1,400 C

  7. TiSi2 integrity within a doped silicide process step

    International Nuclear Information System (INIS)

    Degradation of arsenic implanted titanium silicide (TiSi2) thin films as a result of thermal processing for shallow junction formation is investigated. Significant arsenic diffusion from the silicide overlayer into the silicon substrate has been detected by Rutherford Backscattering Spectrometry at drive-in temperatures > 1,050 C. Cross-sectional transmission electron micrographs have shown the silicide film become increasingly non-uniform as the thermal budget increases, ultimately leading to discontinuities forming in the silicide film. This observed degradation of the titanium silicide film is also supported by sheet resistance measurements which show the film to degrade significantly above a threshold thermal budget

  8. Making of fission 99Mo from LEU silicide(s): A radiochemists' view

    International Nuclear Information System (INIS)

    The present-day industrial scale production of 99Mo is fission based and involves thermal-neutron irradiation in research reactors of highly enriched uranium (HEU, > 20 % 235U) containing targets, followed by radiochemical processing of the irradiated targets resulting in the final product: a 99Mo containing chemical compound of molybdenum. In 1978 a program (RERTR) was started to develop a substitute for HEU reactor fuel i.e. a low enriched uranium (LEU, 235U) one. In the wake of that program studies were undertaken to convert HEU into LEU based 99Mo production. Both new targets and radiochemical treatments leading to 99Mo compounds were proposed. One of these targets is based on LEU silicide, U3Si2. Present paper aims at comparing LEU U3Si2 and LEU U3Si with another LEU target i.e. target material and arriving at some preferences pertaining to 99Mo production. (author)

  9. Silicon and silicide nanowires applications, fabrication, and properties

    CERN Document Server

    Tu, King-Ning

    2013-01-01

    This book comprises theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications. It comprises nine chapters. The first three are based on processing, the next three on properties, and the last three on applications of nanowires of silicon and silicides.

  10. A swelling model of LEU silicide fuel for KMRR

    International Nuclear Information System (INIS)

    A lot of efforts have been made internationally to understand the irradiation behavior and the safety characteristics of uranium silicide fuel. One of the important irradiation performance characteristics of the silicide dispersion fuel element is the diametral increase resulting from fuel swelling. This paper represents an attempt to develop the physical model for the swelling, DFSWELL, by modelling the basic irradiation behavior observed from in-reactor experiments. The most important part of developing the swelling model is the identification of the controlling physical processes. The swelling of the silicide fuel is comprised of the volume change due to three major components; (i) the formation of an interfacial layer between the fuel particle and matrix, (ii) the accumulation of gas bubble nucleation, (iii) the accumulation of solid fission products. In this study, the swelling of the fuel element is quantitatively estimated by considering temperature, fission rate, solid fission product build-up and gas bubble behavior. The DFSWELL model which takes into account the above physical components predicts well the absolute magnitude of silicide fuel swelling in accordance with the power histories in comparison with the experimental data

  11. Nickel silicides in semiconductor processing: thermal budget considerations

    International Nuclear Information System (INIS)

    Nickel silicide (NiSi) is emerging to be the choice material for contact application in semiconductor device processing for 65 nm technology node and beyond. However, process integration issues are yet to be completely understood and addressed. The focus of present work is to facilitate better understanding of the influence of thermal budget on nickel silicide solid-state reaction. The reaction couple consists of single-crystal silicon wafers with nickel layers deposited on them. Requirements for low temperature anneal and improved within wafer sheet resistance uniformity pose challenges for conventional lamp-based rapid thermal processing (RTP) due to lamp response effects on temperature controllability. Extendibility of such a system is presented with emphasis on process chamber technology. Low temperature 'spike' anneal is demonstrated for temperatures 2Si changes as a function of thermal exposure during the first anneal step; this plays an important role in determining the thermal stability of the low resistance mono-silicide during integration. It is postulated that lowering the Ni2Si/Si interface energy favors the delay (in temperature) of the agglomeration of the NiSi. RTP performance stability of less than 1 deg. C is presented for a sub-300 deg. C process. Understanding and resolving the issues around process monitoring methodologies for low temperature anneal are important. The ability to monitor the total thermal exposure down to sub-200 deg. C regime may be necessary for successful integration of nickel silicide in device manufacturing flow

  12. Deposition of aluminide and silicide based protective coatings on niobium

    International Nuclear Information System (INIS)

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. ). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  13. Deposition of aluminide and silicide based protective coatings on niobium

    Science.gov (United States)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  14. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    Science.gov (United States)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  15. Elementary boron and metal-boron compounds

    International Nuclear Information System (INIS)

    Elementary boron is of interest for its peculiar and difficult bonding behaviour in solids. Due to its high oxygen affinity we find no elementary boron in nature. For the same reason it is difficult to isolate pure, elementary boron, and much confusion about 'boron crystals' has been the result of more than 100 years of research. The polymorphic forms of elementary boron and its closely related higher carbides and higher metal borides as well as the simple metal borides, B3C and BN are reported. The quantum-mechanical background responsible for structure and stoichiometry of these crystals is given. (orig.)

  16. Ni based silicides for 45 nm CMOS and beyond

    Energy Technology Data Exchange (ETDEWEB)

    Lauwers, Anne [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)]. E-mail: lauwersa@imec.be; Kittl, Jorge A. [IMEC, Texas Instruments (Belgium); Van Dal, Mark J.H. [IMEC, Philips Research Leuven (Belgium); Chamirian, Oxana [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Pawlak, Malgorzata A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Potter, Muriel de [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Lindsay, Richard [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Raymakers, Toon [Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven (Netherlands); Pages, Xavier [IMEC, ASM Belgium (Belgium); Mebarki, Bencherki [Applied Materials (Belgium); Mandrekar, Tushar [Applied Materials Inc., Santa Clara, CA (United States); Maex, Karen [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2004-12-15

    Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni{sub 2}Si and NiSi on single-crystalline and poly-crystalline silicon and the thermal degradation mechanisms. Ni{sub 2}Si was found to grow by diffusion controlled kinetics with an activation energy of about 1.55 eV on single-crystalline Si. As a result, the excessive silicidation in small features can be reduced in a 2-step Ni-silicide process by reducing the thermal budget of the first RTP step. The mechanisms of thermal degradation of NiSi were studied. Thin NiSi films were found to degrade morphologically while still in the monosilicide phase. Thick NiSi films degrade morphologically at low temperatures and by transformation to NiSi{sub 2} at high temperatures. The reaction of Ni with SiGe substrates and the effect of Ge on the thermal degradation of the Ni-germanosilicide were investigated. Activation energies for the thermal degradation of Ni(SiGe) on SiGe were found to be significantly smaller than the values found for the thermal degradation of NiSi on pure Si. The effect of alloying Ni with Pt or Ta was studied. NiSi films alloyed with Pt or Ta are found to be thermally more stable compared to pure NiSi. Alloying with Pt was found to improve the thermal stability of NiSi on narrow poly-Si gates. The kinetics of Ni{sub 2}Si and NiSi formation on poly silicon were determined as well as their dependence on dopants. The presence of B in high doses was found to slow down the silicide formation significantly. Dopant segregation to the NiSi/oxide interface was observed, which is believed to be responsible for the observed shifts in work function. The sheet resistance of fully Ni-silicided 100 nm poly Si/oxide stacks is found to be stable up to 800 deg. C.

  17. Ni based silicides for 45 nm CMOS and beyond

    International Nuclear Information System (INIS)

    Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni2Si and NiSi on single-crystalline and poly-crystalline silicon and the thermal degradation mechanisms. Ni2Si was found to grow by diffusion controlled kinetics with an activation energy of about 1.55 eV on single-crystalline Si. As a result, the excessive silicidation in small features can be reduced in a 2-step Ni-silicide process by reducing the thermal budget of the first RTP step. The mechanisms of thermal degradation of NiSi were studied. Thin NiSi films were found to degrade morphologically while still in the monosilicide phase. Thick NiSi films degrade morphologically at low temperatures and by transformation to NiSi2 at high temperatures. The reaction of Ni with SiGe substrates and the effect of Ge on the thermal degradation of the Ni-germanosilicide were investigated. Activation energies for the thermal degradation of Ni(SiGe) on SiGe were found to be significantly smaller than the values found for the thermal degradation of NiSi on pure Si. The effect of alloying Ni with Pt or Ta was studied. NiSi films alloyed with Pt or Ta are found to be thermally more stable compared to pure NiSi. Alloying with Pt was found to improve the thermal stability of NiSi on narrow poly-Si gates. The kinetics of Ni2Si and NiSi formation on poly silicon were determined as well as their dependence on dopants. The presence of B in high doses was found to slow down the silicide formation significantly. Dopant segregation to the NiSi/oxide interface was observed, which is believed to be responsible for the observed shifts in work function. The sheet resistance of fully Ni-silicided 100 nm poly Si/oxide stacks is found to be stable up to 800 deg. C

  18. Weld embrittlement in a silicide-coated tantalum alloy

    International Nuclear Information System (INIS)

    Certain weld configurations of Ta-10W alloy can become severely embrittled after a silicide coating procedure. The source of this embrittlement is shown to be a result of pronounced carbide precipitation at grain boundaries in the fusion zones of the weld. The source of carbon is the nitrocellulose lacquer that is contained in the slurry of metal powders used to provide the silicide coating. In certain weld configurations, the nitrocellulose can flash ahead of the remainder of the coating mixture, and the carbon constituent can diffuse down grain boundaries in subsequent thermal treatments. It is demonstrated that this embrittlement can be avoided if lacquers other than nitrocellulose are used or if weld configurations containing tight-fitting overlaps are avoided. The possible role of hydrogen embrittlement is also discussed. (author)

  19. RA-3 core with uranium silicide fuel elements

    International Nuclear Information System (INIS)

    Following on with studies on uranium silicide fuel elements, this paper reports some comparisons between the use of standard ECN [U3O8] fuel elements and type P-06 [from U3Si2] fuel elements in the RA-3 core.The first results showed that the calculated overall mean burn up is in agreement with that reported for the facility, which gives more confidence to the successive ones. Comparing the mentioned cores, the silicide one presents several advantages such as: -) a mean burn up increase of 18 %; -) an extraction burn up increase of 20 %; -) 37.4 % increase in full power days, for mean burn up. All this is meritorious for this fuel. Moreover, grouped and homogenized libraries were prepared for CITVAP code that will be used for planning experiments and other bidimensional studies. Preliminary calculations were also performed. (author)

  20. Tailoring of nickel silicide contacts on silicon carbide

    International Nuclear Information System (INIS)

    Co-deposition technique by means of simultaneous ion beam sputtering of nickel and silicon onto SiC was performed for tailoring of Ni-silicide/SiC contacts. The prepared samples were analysed by means of XRD and XPS in order to obtain information about the surface and interface chemistry. Depth profiling was used in order to analyse in-depth information and chemical distribution of the specimens. XRD results showed that the main phase formed is Ni2Si. The XPS analysis confirmed the formation of the silicide on the surface and showed details about the chemical composition of the layer and layer/substrate interface. Moreover, the XPS depth profiles with detailed analysis of XPS peaks suggested that tailoring of C distribution could be monitored by the co-deposition technique employed

  1. Development and Oxidation Resistance of B-doped Silicide Coatings on Nb-based Alloy

    International Nuclear Information System (INIS)

    Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of 3 Wt.%NH4Cl, 7 Wt.%Si, 90 Wt.%Al2O3+TiB2. B-doped silicide coating was consisted of two layers, an outer layer of NbSi2 and an inner layer of Nb5Si3. Isothermal oxidation resistance of B-doped silicide coating was tested at 1250 .deg. C in static air. B-doped silicide coating had excellent oxidation resistance, because continuous SiO2 scale which serves as obstacle of oxygen diffusion was formed after oxidation

  2. A study of CoSix silicide formed by recoil implantation

    International Nuclear Information System (INIS)

    This work investigated the formation of CoSix silicides on n-Si by recoil implantation through a thin cobalt layer using an inert gas ion beam. The results suggest the formation of a very shallow (35 to 45 nm) silicide surface layer under the specific conditions of preparation. The surface layer resistivity was comparable to values reported for Co2Si and CoSi, although below the surface, the resistivity decreased. This appeared to suggest a change-over from cobalt-rich silicides near the surface to a more conducting silicide (CoSi2) at the interface. (author)

  3. Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

    International Nuclear Information System (INIS)

    Thin film germanide reactions are often declared to be the same as silicides reactions which were far more studied. In this paper, we present a comparative study of the phase formation and kinetics of nickel silicides and nickel germanides by several experimental techniques. The samples, composed of a nanometric nickel film (50 nm) deposited on silicon or germanium substrates, have been examined by several 'in situ' real time measurements: X-ray diffraction (XRD), and differential scanning calorimetry (DSC). These original DSC and 'in situ' XRD measurements have allowed us to determine the interfacial reaction rate for Ni2Si using a linear-parabolic law. During the relatively fast DSC ramp, the growth is mainly controlled by the interface while isothermal heat treatments lead to a mainly diffusion control. In contrary to what is usually found for nickel silicide and germanides, a simultaneous growth of Ni5Ge3 and NiGe has been found during 'in situ' XRD measurements. The different behavior between the Ni-Si system (sequential formation) and the Ni-Ge system (simultaneous formation) is interpreted in term of diffusion and interface controlled growth. In addition, in devices, the film stability and the stress of the silicides or the germanides can be affected by an important physical characteristic that is the anisotropy of dilatation coefficient. In this work, the lattice parameters and linear thermal expansion coefficients (γa, γb and γc) of the orthorhombic Ni(Si1-XGeX) compounds with 0 ≤ X ≤ 1 were determined from high temperature X-ray diffraction data (298-1073 K). A negative thermal expansion coefficient of the b lattice parameter of Ni(Si1-XGeX) for all the studied Ge concentration was observed: the magnitude of this negative thermal expansion coefficient is decreasing with increasing Ge concentration

  4. Detailed analysis of uranium silicide dispersion fuel swelling

    International Nuclear Information System (INIS)

    Swelling of U3Si and U3Si2 is analyzed. The growth of fission gas bubbles appears to be affected by fission rate, fuel loading, and micro structural change taking place in the fuel compounds during irradiation. Several mechanisms are explored to explain the observations. The present work is aimed at a better understanding of the basic swelling phenomenon in order to accurately model irradiation behavior of uranium silicide dispersion fuel. (orig.)

  5. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    Science.gov (United States)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  6. Fracture of niobium-base silicide coated alloy

    International Nuclear Information System (INIS)

    Mechanical properties and character of fracture of Nb-W-Mo-Zr-C alloy composition with complex by composition and structure silicide coating under different states of stage-by-stage coating are studied. Structural features, character of fracture from ductile to quasibrittle transcrystalline one and, respectively, the composition plasticity level are defined by interrelation of fracture processes in coating, matrix plastic flow and possibility and way of stress relaxation on their boundary

  7. Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Coumba Ndoye, Kandabara Tapily, Marius Orlowski, Helmut Baumgart, Diefeng Gu

    2011-07-01

    Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

  8. Fuel management strategy for the new equilibrium silicide core design of RSG GAS (MPR-30)

    International Nuclear Information System (INIS)

    The design procedure and fuel management strategy were proposed for converting the oxide core of RSG GAS (MPR-30) to the new equilibrium silicide core using higher uranium loading. The obtained silicide core gave significant extension of the core cycle length and thus increasing the reactor availability and utilisation. (author)

  9. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  10. Sputtering behavior of boron and boron carbide

    International Nuclear Information System (INIS)

    Sputtering yields of boron were measured with D+ and B+ ions for normal and oblique angles of incidence. Self-sputtering data of boron carbide were simulated in the experiment by using Ne+ ions. The energies of the impinging ions were between 20 eV and 10 keV. The measured data are compared with computer simulated values calculated with the TRIMSP program. The boron data for normal ion impact are higher than the calculated values, whereas those for oblique ion incidence are smaller than the calculation predicts. This discrepancy is explained by the surface roughness and supported by SEM micrographs. The comparison of the boron carbide data with TRIMSP calculations shows much better agreement than the boron data. In this case the target surface was much smoother. (orig.)

  11. Mechanochemical synthesis and spark plasma sintering of the cerium silicides

    International Nuclear Information System (INIS)

    Highlights: • Ce5Si3, Ce3Si2, CeSi, CeSi2−x and CeSi2 were mechanochemically synthesized. • Temperature and pressure were monitored to investigate reaction progress. • All syntheses proceeded through a MSR event followed by rapid solid-state diffusion. • Milling time before MSR correlates well with effective heat of formation. • Some synthesized material was densified by spark plasma sintering. - Abstract: The cerium silicides, Ce5Si3, Ce3Si2, CeSi, CeSi2−y, and CeSi2−x, have been prepared from the elements by mechanochemical processing in a planetary ball mill. Preparation of the cerium silicide Ce5Si4 was unsuccessfully attempted and potential reasons for this are discussed. Temperature and pressure of the milling vial were monitored in situ to gain insight into the mechanochemical reaction kinetics, which include a mechanically-induced self-propagating reaction (MSR). Some prepared powders were consolidated by spark plasma sintering to high density. Starting materials, as-milled powders, and consolidated samples were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The results obtained help elucidate key questions in mechanochemical processing of intermetallics, showing first phase formation similar to thin films, MSR ignition times that are composition- and milling speed-dependent, and sensitivity of stable compound formation on the impact pressure. The results demonstrate mechanochemical synthesis as a viable technique for rare earth silicides

  12. Mechanochemical synthesis and spark plasma sintering of the cerium silicides

    Energy Technology Data Exchange (ETDEWEB)

    Alanko, Gordon A.; Jaques, Brian; Bateman, Allyssa [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Butt, Darryl P., E-mail: darrylbutt@boisestate.edu [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Center for Advanced Energy Studies, 995 University Boulevard, Idaho Falls, ID 83401 (United States)

    2014-12-15

    Highlights: • Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−x} and CeSi{sub 2} were mechanochemically synthesized. • Temperature and pressure were monitored to investigate reaction progress. • All syntheses proceeded through a MSR event followed by rapid solid-state diffusion. • Milling time before MSR correlates well with effective heat of formation. • Some synthesized material was densified by spark plasma sintering. - Abstract: The cerium silicides, Ce{sub 5}Si{sub 3}, Ce{sub 3}Si{sub 2}, CeSi, CeSi{sub 2−y}, and CeSi{sub 2−x}, have been prepared from the elements by mechanochemical processing in a planetary ball mill. Preparation of the cerium silicide Ce{sub 5}Si{sub 4} was unsuccessfully attempted and potential reasons for this are discussed. Temperature and pressure of the milling vial were monitored in situ to gain insight into the mechanochemical reaction kinetics, which include a mechanically-induced self-propagating reaction (MSR). Some prepared powders were consolidated by spark plasma sintering to high density. Starting materials, as-milled powders, and consolidated samples were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. The results obtained help elucidate key questions in mechanochemical processing of intermetallics, showing first phase formation similar to thin films, MSR ignition times that are composition- and milling speed-dependent, and sensitivity of stable compound formation on the impact pressure. The results demonstrate mechanochemical synthesis as a viable technique for rare earth silicides.

  13. Immobilization of Uranium Silicide in Sintered Iron-Phosphate Glass

    International Nuclear Information System (INIS)

    This work is a continuation of a previous one performed in vitrification of uranium silicide in borosilicate and iron-silicate glasses, by sintering.We present the results obtained with an iron-phosphate glass developed at our laboratory and we compare this results with those obtained with the above mentioned glasses. The main objective was to develop a method as simple as possible, so as to get a monolithic glass block with the appropriate properties to be disposed in a deep geological repository.The thermal transformation of the uranium silicide was characterized by DTA/TG analysis and X-ray diffraction.We determined the evolution of the crystalline phases and the change in weight.Calcined uranium silicide was mixed with natural U3O8, the amount of U3O8 was calculated to simulate an isotopic dilution of 4%.This material was mixed with powdered iron-phosphate glass (in wt.%: 64,9 P2O5; 22,7 Fe2O3; 8,1 Al2O3; 4,3 Na2O) in different proportions (in wt%): 7%, 10% y 15%.The powders were pressed and sintered at temperatures between 585 y 670 °C. Samples of the sintered pellet were prepared for the lixiviation tests (MCC-1P: monolithic samples; deionised water; 90° C; 7, 14 and 28 days).The samples showed a quite good durability (0,6 g.m-2.day-1), similar to borosilicate glasses.The microstructure of the glass samples showed that the uranium particles are much better integrated to the glass matrix in the iron-phosphate glasses than in the borosilicate or iron-silicate glasses.We can conclude that the sintered product obtained could be a good alternative for the immobilization of nuclear wastes with high content of uranium, as the ones arising from the conditioning of research reactors spent fuels

  14. Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-xPtx silicide films

    International Nuclear Information System (INIS)

    This letter reports on a process scheme to obtain highly reproducible Ni1-xPtx silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

  15. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  16. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    International Nuclear Information System (INIS)

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of 235U. Fuel plates containing 33 v/o U3Si and U3Si2 behaved very well up to this burnup. Plates containing 33 v/o U3 Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U3Si Al plates, up to 50 v/o, were found to pillow at lower burnups. Plates containing 40 v/o U3Si showed an increased swelling rate around 85% burnup. (author)

  17. Pt redistribution during Ni(Pt) silicide formation

    OpenAIRE

    Demeulemeester, Jelle; Smeets, D.; Van Bockstael, C; Detavernier, C.; Comrie, C. M.; Barradas, N. P.; Vieira, A; Vantomme, André

    2008-01-01

    We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni2Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni2Si grain boundaries, significantly slowing down the Ni2Si and NiSi growth kinetics. Moreover, the observed in...

  18. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    International Nuclear Information System (INIS)

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of 235U. Fuel plates containing 33 v/o U3Si and U3Si2 behaved very well up to this burnup. Plates containing 33 v/o U3Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U3Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U3Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs

  19. Safety assessment of KUR low-enriched uranium silicide core

    International Nuclear Information System (INIS)

    Kyoto University Research Reactor (KUR) is a light-water moderated and cooled tank-type reactor operated at the rated thermal power of 5 MW. The operation of KUR with highly enriched uranium fuel ended on February 23, 2006 after its successful operation for 42 years. Since then, the conversion processes to the use of low-enriched uranium fuel have been performed. The operation of KUR with low-enriched uranium fuel is due to begin in the second half of FY2009. This report describes the abnormal transient and accident analysis for the safety assessment of KUR silicide core which have been carried out as a part of KUR silicide fuel project. The following 10 cases for the anticipated operational transients and accidents have been selected and analyzed for the safety assessment. Anticipated operational transients: (1) Due to reactivity or power distribution changes in the core. 1) Uncontrolled control rod withdrawal (from zero power, during natural circulation operation, during steady-state operation), 2) Reactivity insertion by cold water insertion, 3) Reactivity insertion by removal of irradiation samples. (2) Due to heat generation or heat removal changes in the core. 1) Primary coolant pump failure and flow coast down, 2) Secondary coolant pump failure and flow coast down, 3) Loss of commercial electric power supply. Accidents: Due to the effluent of primary coolant or the significant change of heat removal in the core. 1) Reactivity insertion by mishandling of a fuel assembly, 2) Effluent of primary coolant due to pipe rapture, 3) Primary coolant pump abrupt failure without coast down, 4) Flow channel blockage in the core. The transient analysis for the safety assessment of KUR silicide core after the earthquake was also carried out in present study. The analyses have been performed by THYDE-W, EUREA-2/RR and COOLOD-N2. Various operational conditions were studied to obtain critical results in the analyses. The results show that all cases meet the safety criteria

  20. Mass spectrometric determination of boron isotope in boron carbide

    International Nuclear Information System (INIS)

    Boron isotopes in boron carbide are measured by thermionic ionization mass spectrometry with no prior chemical separation. Boron is converted to sodium borate by fusion of the boron carbide with sodium hydroxide (or sodium carbonate) directly on the rhenium filament. The boron isotopic ratios are measured by using the Na2BO2+ ion

  1. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  2. Nonuniformity effects in a hybrid platinum silicide imaging device

    Science.gov (United States)

    Dereniak, Eustace L.; Perry, David L.

    1992-05-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a starting infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using, plans provided by the Rome Laboratory at Hanscom AFB. Testing of the device revealed largely satisfactory performance, with notable exception in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this area included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365's expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  3. Atomic size effects studied by transport in single silicide nanowires

    Science.gov (United States)

    Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M.; Holtgrewe, K.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.

    2016-03-01

    Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

  4. The Formation and Growth Process of Ru Silicide on Si(111) Surface

    Science.gov (United States)

    Toramaru, Masamitsu; Kobayashi, Naoto; Ohno, Shinya; Shudo, Kenichi; Miyamoto, Yasuyoshi; Kawamura, Norikazu

    Formation process of nanoscale ruthenium silicide islands on a Si(111) surfaces was studied with scanning tunneling microscopy for the first time. The ruthenium silicide islands were formed and grown on the only disorder-region, and small island grew up in three dimensions by incorporation of clusters including Ru exist on disorder-region and silicon atoms during thermal annealing. As the sizes of islands approaches 400 nm2 or more, the growth in two dimensional in a plane was limited, and it grew up in the direction of height. We will discuss about the formation process of ruthenium silicide on a Si(111) surface.

  5. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    OpenAIRE

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V.A.; Mironov, S.A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-01-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si...

  6. Formation and Oxidation Resistance of Silicide Coatings for Mo and Mo-Based Alloys

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The forming process of silicide coatings on pure Mo and Mo-base alloys, obtained by the gasphase deposition method, has been studied by examining the microstructure of coatings and the relationship between coating thickness and process parameters. It was shown that the growth of coatings was diffusion-controlled, the diffusion of silicon to be coated into Mo or Mo-base alloys was mainly responsible for the formation of silicide. The relationship between initial silicide thickness and oxidation resistance was also investigated, and the equation of service life of the coatings at high temperature in air is presented.

  7. Influence Of The Gas Multipurpose Reactor Core Conversion From Oxide To Silicide On The GAMMA Density

    International Nuclear Information System (INIS)

    In order to prepare the reactor core conversion from oxide to silicide, analysis of the gamma heat generation in the fuel plate and its influence on the gamma density in the reactor core using the GAMSET computer code have been done. The heat generation was evaluated for oxide (U3O8-Al) and silicide (U3Si2-Al) plate for different uranium loading. The calculation result shows that the heat generation in the silicide fuel plate contains 400 gram of U-235 per fuel element increase of 10.64% related to the normal oxide plate. This means that the gamma density in the reactor core will consequently decrease. Regarding this result, it can be concluded that the core conversion from oxide to silicide fuel with higher uranium loading will be followed by the heat generation increases in the fuel plate and the gamma density decreases in the reactor core

  8. Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si

    International Nuclear Information System (INIS)

    Interface characterization of pulsed laser deposited (PLD) Ti thin films on Si substrates using secondary ion mass spectrometry (SIMS), grazing incidence X-ray diffraction (GIXRD) and grazing incidence X-ray reflectivity (GIXRR) reveals the growth of titanium silicides (predominantly C54-TiSi2) layers at room temperature. These silicides nucleate and grow only at higher temperatures if deposited by other physical vapor deposition techniques. The films have been subjected to isothermal and isochronal annealing under vacuum with a view to enhancing interface reaction and interdiffusion. The silicide phase formation at room temperature is due to the energetic Ti species available in PLD plume. The silicides formed in PLD have exhibited high thermal stability

  9. Stress Evolution During Ni-Si Compound Formation for Fully Silicided (FUSI) Gates

    Energy Technology Data Exchange (ETDEWEB)

    Torregiani,C.; Van Bockstael, C.; Detavernier, C.; Lavoie, C.; Lauwers, A.; Maex, K.; Kittl, J.

    2007-01-01

    The stress (force) evolution during the formation of different Ni silicide phases was monitored by in situ curvature measurements, for the reaction of thin Ni films of various thicknesses with 100 nm polycrystalline-Si deposited on oxidized (1 0 0) Si substrates. The silicide phase formation was also monitored by in situ X-ray diffraction, allowing to match and interpret the stress evolution in terms of the formation of the different silicide phases. We found that stresses developed during the formation of the different silicides can be explained qualitatively in terms of the corresponding volume changes at the reacting interfaces. Furthermore, the matching between XRD and force curve reveals that the highest compressive stress is related to the formation of the Ni31Si12 phase, and that the stress formed is relaxed when the reaction is completed.

  10. Measurement of thermal conductivity of uranium silicide - aluminum dispersion fuel

    International Nuclear Information System (INIS)

    In conjunction with reducing enrichment program for JMTR, thermal conductivity of uranium silicide - aluminum (U3Si2-Al) dispersion fuel was measured in the temperature range of 25degC ∼ 400degC for the safety evaluation of low enriched uranium fuel. Since thermal conductivity is determined as the product of thermal diffusivity, heat capacity and density, these three properties were individually measured. Thermal diffusivity and heat capacity of the specimen were measured by the laser flash method. Temperature dependence of density was obtained by measuring the thermal linear expansion with differential dilatometer. Obtained results show that conductivity of the U3Si2-Al dispersion fuel slightly increases as temperature increases, and tends to reach the maximum around 300degC. (author)

  11. Capping of rare earth silicide nanowires on Si(001)

    International Nuclear Information System (INIS)

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires

  12. Status of the atomized uranium silicide fuel development at KAERI

    Energy Technology Data Exchange (ETDEWEB)

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H. [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  13. Capping of rare earth silicide nanowires on Si(001)

    Science.gov (United States)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Reiß, Paul; Niermann, Tore; Schubert, Markus Andreas; Lehmann, Michael; Dähne, Mario

    2016-01-01

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along {111} lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  14. Pt redistribution during Ni(Pt) silicide formation

    International Nuclear Information System (INIS)

    We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni2Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni2Si grain boundaries, significantly slowing down the Ni2Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni1-xPtxSi film

  15. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    Energy Technology Data Exchange (ETDEWEB)

    Hofman, G.L.; Neimark, L.A.

    1985-01-01

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of /sup 235/U. Fuel plates containing 33 v/o U/sub 3/Si and U/sub 3/Si/sub 2/ behaved very well up to this burnup. Plates containing 33 v/o U/sub 3/Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U/sub 3/Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U/sub 3/Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs.

  16. Attempt to produce silicide fuel elements in Indonesia

    International Nuclear Information System (INIS)

    After the successful experiment to produce U3Si2 powder and U3Si2-Al fuel plates using depleted U and Si of semiconductor quality, silicide fuel was synthesized using x-Al available at the Fuel Element Production Installation (FEPI) at Serpong, Indonesia. Two full-size U3Si2-Al fuel elements, having similar specifications to the ones of U3O8-Al for the RSG-GAS (formerly known as MPR-30), have been produced at the FEPI. All quality controls required have been imposed to the feeds, intermediate, as well as final products throughout the production processes of the two fuel elements. The current results show that these fuel elements are qualified from fabrication point of view, therefore it is expected that they will be permitted to be tested in the RSG-GAS, sometime by the end of 1989, for normal (∝50%) and above normal burn-up. (orig.)

  17. Capping of rare earth silicide nanowires on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario [Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany); Reiß, Paul; Niermann, Tore; Lehmann, Michael [Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin (Germany); Schubert, Markus Andreas [IHP–Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany)

    2016-01-04

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  18. SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers

    OpenAIRE

    Bain, M.; El Mubarek, H A; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P L; Hall, S.; Ashburn, P.

    2005-01-01

    A technology is described for fabricating SiGe hetero-junction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance m...

  19. SiGe HBTs on bonded SOI incorporating buried silicide layers

    OpenAIRE

    Bain, M.; El Mubarek, A. W.; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P. L. F.; Hall, Steven; Ashburn, Peter

    2005-01-01

    A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance me...

  20. Advanced Lightweight Silicide and Nitride Based Materials for Turbo-Engine Applications.

    OpenAIRE

    Drawin, S.; Justin, J.F.

    2011-01-01

    International audience Refractory metal silicides and nitride-based ceramics combine two properties that may lead to substantial reductions in aircraft fuel consumption : compared to the most advanced nickel-based superalloys presently used in aeronautical turbines, they can withstand higher temperatures and may have lower densities. Niobium silicide-based alloys and silicon nitride / molybdenum disilicide composites are currently being developed for turbine hot section components for both...

  1. Deposition of magnesium silicide nanoparticles by the combination of vacuum evaporation and hydrogen plasma treatment

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Stuchlíková, The-Ha; Artemenko, Anna; Remeš, Zdeněk

    Tokyo : The Japan Society of Applied Physics, 2015 - (Asano, T.), "011301-1"-"011301-5" ISBN 978-4-86348-491-7. [International Conference and Summer School on Advanced Silicide Technology 2014. Tokyo (JP), 19.07.2014-21.07.2014] R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LD14011; GA MŠk LH12236 Institutional support: RVO:68378271 Keywords : plasma treatment * silicides Subject RIV: BM - Solid Matter Physics ; Magnetism

  2. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

    OpenAIRE

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-01-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment...

  3. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  4. Neutronic design for the conversion of ETRR-2 Reactor from oxide fuel to silicide fuel

    International Nuclear Information System (INIS)

    The neutronic design of Egypt second research reactor (ETRR-2) core conversion from oxide (U3 O8 - Al) fuel to silicide (U3Si2-Al) was carried out. The silicide fuel was chosen for the core conversion because of its high maximum fuel meat density (4.8 gu/cm3) which expected to increase the operation cycle length to meet the higher reactor availability and utilization. Analysis of ETRR-2 core was done first for the conversion from oxide (U3 O8 - Al) core, through a series of mixed oxide-silicide cores, to an all silicide (U3Si2 - Al) core with the same meat density of 3.017 gU/cm3. The second analysis was done for the conversion from low meat density (3.017/gU/cm3) silicide core, through a series of lower-higher meat density silicide cores , to an all higher meat density (3.54 gU/cm3) silicide core. The standard computer codes such as WIMSD4 code and diffusion code CITVAP (new version of CITATION II developed by INVAP's nuclear engineering division) were used in core neutronic calculations. The calculation results show the safe operation conditions of the intermediate or transition cores and equilibrium cores. With higher density silicide fuel, ETRR-2 core operation cycle length was increased from 15 (full power days)FPDs to 20 FPDs which reduce the total cost of fuel element, number of spent fuel elements, and times of core refueling. Also, the reactor utilization and production of radioisotopes can be increased.

  5. Research on behaviour of the irradiated uranium silicide for fission Mo-99 production

    International Nuclear Information System (INIS)

    This paper shows the results of purification of Mo-99 obtained by U-235 fission contained in uranium silicide (Si2U3) targets. These are the first tests carried out with irradiated targets. The separation method was previously developed employing non-irradiated uranium silicide with and with tracer addition. These tests were made trying to preserve the stages of the present method for fission Mo-99 production in the Argentine Republic. (author)

  6. Information for irradiation and post-irradiation of the silicide fuel element prototype P-07

    International Nuclear Information System (INIS)

    Included in the 'Silicides' Project, developed by the Nuclear Fuels Department of the National Atomic Energy Commission (CNEA), it is foreseen the qualification of this type of fuel for research reactors in order to be used in the Argentine RA-3 reactor and to confirm the CNEA as an international supplier. The paper presents basic information on several parameters corresponding to the new silicide prototype, called P-07, to be taken into account for its irradiation, postirradiation and qualification. (author)

  7. Synthesis of Co-silicides and fabrication of microwavepower device using MEVVA source implantation

    Institute of Scientific and Technical Information of China (English)

    ZHANG; Tonghe(张通和); WU; Yuguang(吴瑜光); QIAN; Weidong(钱卫东); LIU; Yaodong(刘要东); ZHANG; Xu(张旭)

    2002-01-01

    Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 mA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50 mA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the transistors decrease markedly; the microwave property has been improved obviously.

  8. Determination of boron and silicon in boron carbide

    International Nuclear Information System (INIS)

    A sodium carbonate fusion technique for the dissolution of boron carbide followed by the determination of boron by alkalimetric titration and silicon impurity by spectrophotometry is described. The elemental boron content in the commercially available boron carbide ranged from 77.2 to 77.60 % and the silicon in the range 1170 to 2500 ppm. (author)

  9. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A., E-mail: me144@phys.vsu.ru [Voronezh State University (Russian Federation)

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  10. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S.; Wall, Donald [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Jordan-Sweet, Jean; Lavoie, Christian [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States)

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  11. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  12. Theory of Interface States at Silicon / Transition - - Silicide Interfaces.

    Science.gov (United States)

    Lim, Hunhwa

    The Si/NiSi(,2)(111) interface is of both fundamental and techno- logical interest: From the fundamental point of view, it is the best characterized of all semiconductor/metal interfaces, with two well-determined geometries (A and B) involving nearly perfect bonding. (This is because Si and NiSi(,2) have nearly the same lattice spacing.) Consequently, a theoretical treatment of this system makes sense--as it would not for messier systems--and one can have some confidence that the theoretical predictions are relevant to experimental observa- tions. From the technological point of view, Si/NiSi(,2) is representative of the class of semiconductor/metal interfaces that are currently of greatest interest in regard to electronic devices--Si/transition -metal-silicide interfaces. The calculations of this dissertation are for the intrinsic interface states of Si/NiSi(,2)-A geometry. These calculations also provide a foundation for later studies of defects at this interface, and for studies of other related systems, such as CoSi(,2). The calculations employ empirical tight-binding Hamiltonians for both Si and NiSi(,2) (with the parameters fitted to prior calculations of the bulk band structures, which appear to be in agreement with the available experimental data on bulk Si and NiSi(,2)). They also employ Green's function techniques--in particular, the subspace Hamiltonian technique. Our principal results are the following: (1) Interface state disper- sion curves are predicted along the symmetry lines (')(GAMMA)(')M, (')M(')K and (')K(')(GAMMA) of the surface Brillouin zone. (2) A prominent band of interface states is found which disperses downward from an energy within the Si band gap to an energy below the Si valence band edge E(,(upsilon)) as the planar wavevector (')k increases from (')(GAMMA) ((')k = 0) to (')M or (')K (symmetry points at boundary of the surface Brillouin zone). This band of inter- face states should be observable. It produces a peak in the surface

  13. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  14. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  15. Mixing of Al into uranium silicides reactor fuels

    International Nuclear Information System (INIS)

    SEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. The authors have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27Al(p, γ) 28Si resonance nuclear reaction were used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300 C. Initially U mixes into the Al layer and Al mixes into the U3Si. At a low dose, the Al layer is converted into UAl4 type compound while near the interface the phase U(Al.93Si.07)3 grows. Under irradiation, Al diffuses out of the UAl4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3Si2 is slower than in U3Si, but after high dose irradiation the Al concentration extends much farther into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed

  16. New Manganese Silicide Mineral Phase in an Interplanetary Dust Particle

    Science.gov (United States)

    Nakamura-Messenger, K.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Palma, R. L.; Pepin, R. O.; Kloeck, W.; Zolensky, M. E.; Messenger, S.

    2008-01-01

    Comet 26P/Grigg-Skjellerup was identified as a source of an Earth-crossing dust stream with low Earth-encounter velocities, with peak anticipated fluxes during April in 2003 and 2004 [1]. In response to this prediction, NASA performed dedicated stratospheric dust collections using high altitude aircraft to target potential interplanetary dust particles (IDPs) from this comet stream in April 2003. Several IDPs from this collection have shown unusually low noble gas abundances [2] consistent with the predicted short space exposure ages of Grigg-Skjellerup dust particles [1]. High abundances of large D enrichments [3] and presolar grains [4] in IDPs from this collection are also consistent with an origin from the comet Grigg-Skjellerup. Here we report a new mineral from one of the cluster IDPs of the "Grigg-Skjellerup" collection, L2055. Our report focuses on an unusual manganese-iron-chromium silicide phase that, to our knowledge, has not been observed previously in nature. This unique phase may also shed light on the genesis of the enigmatic low-Fe,Mn-enriched (LIME) olivine that has been previously reported in IDPs and meteorites [5].

  17. KUR core conversion to use LEU silicide fuel

    International Nuclear Information System (INIS)

    As one of possible future programs for the Kyoto University Research Reactor (KUR), the Research Reactor Institute of Kyoto University (KURRI) has a plan for core conversion to the use of low-enriched uranium (LEU) fuel. A feasibility study for this conversion started in November, 1983, as a part of the joint study between KURRI and Argonne National Laboratory (ANL).Thermal-hydraulic analysis on the use of LEU fuels in the KUR was performed in 1984, and neutronic calculation in 1985. The conversion is to be from the current highly enriched uranium HEU (93.15%, UAl-alloy 0.586 gU/cm3) to LEU (19.75%, U3Si2-Al, 3.2 gU/cm3). The results indicate that the core can be converted without significant difficulties. Prior to the safety review application for the full core conversion with LEU silicide fuel, we are planning to demonstrate the use of two full size LEU suicide fuel elements among the current HEU elements. The safety analysis report for the two-element demonstration is to be submitted to the government shortly. The full core conversion is anticipated in 1993.(author)

  18. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  19. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    International Nuclear Information System (INIS)

    Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

  20. Strategy for silicon based hot-wire chemical vapor deposition without wire silicide formation

    Energy Technology Data Exchange (ETDEWEB)

    Laukart, Artur, E-mail: artur.laukart@ist.fraunhofer.de; Harig, Tino; Höfer, Markus; Schäfer, Lothar

    2015-01-30

    Silicide formation of wires during hot-wire chemical vapor deposition (HWCVD) of silicon based coatings is a key challenge which has to be overcome before HWCVD can be transferred successfully into industry. Silicide formation of tungsten wires is not occurring at temperatures of approximately 1900 °C and above when maintaining a silane partial pressure below approximately 1 Pa. Proceeding silicide formation at the cold ends where the wires are electrically contacted was completely prevented by continuously moving the cold ends of the wires into the hot deposition zone, resulting in a retransformation of the tungsten phase. Thus the maintenance period of a HWCVD manufacturing tool can be freed from wire lifetime.

  1. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

    Science.gov (United States)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.

    2016-07-01

    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  2. Kinetics and mechanism of hydrogen evolution reaction on cobalt silicides in alkaline solutions

    International Nuclear Information System (INIS)

    Cathodic polarisation curves and impedance spectra for cobalt silicides Co2Si and CoSi2 in 0.5–2 M KOH at ambient temperature were obtained. It was shown that electrocatalytic activity of both silicides in hydrogen evolution reaction (HER) is higher than that of cobalt. The dependences of equivalent circuit elements on the electrode potential were analysed. The conclusion was made that the atomic hydrogen adsorption on the surface of cobalt silicides is described by the Langmuir isotherm, and hydrogen evolution proceeds through the Volmer–Heyrovsky mechanism (at α1 ≠ α2 for Co2Si and α1 = α2 for CoSi2; α1 and α2 are the transfer coefficients for the Volmer and Heyrovsky steps respectively). The Heyrovsky reaction is probably the rate-determining step. The values of the kinetic parameters of HER on Co2Si and CoSi2 in 1 M KOH were estimated

  3. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    International Nuclear Information System (INIS)

    Iron silicide (cubic FeSi2) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi2 nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges

  4. Analysis of impurity effect on Silicide fuels of the RSG-GAS core

    International Nuclear Information System (INIS)

    Simulation of impurity effect on silicide fuel of the RSG-GAS core has been done. The aim of this research is to know impurity effect of the U-234 and U-236 isotopes in the silicide fuels on the core criticality. The silicide fuels of 250 g U loading and 19.75 of enrichment is used in this simulation. Cross section constant of fuels and non-structure material of core are generated by WIMSD/4 computer code, meanwhile impurity concentration was arranged from 0.01% to 2%. From the result of analysis can be concluded that the isotopes impurity in the fuels could make trouble in the core and the core can not be operated at critical after a half of its cycle length (350 MW D)

  5. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    Energy Technology Data Exchange (ETDEWEB)

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N., E-mail: msbnd@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

    2014-11-10

    Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  6. Comparison of JRR-4 core neutronic performance between silicide fuel and TRIGA fuel

    International Nuclear Information System (INIS)

    Neutronic analyses on the JRR-4 core loaded with 20 wt% Low Enriched Uranium (LEU) fuels have been performed using SRAC code system. The LEU fuels studied in this work are ETR type silicide one and TRIGA one. For each type of them, parametrical analyses were done as the function of uranium loading in the fuel element to see changes of core excess reactivity, thermal neutron flux, fuel burnup and so on. From many cell and whole core calculations, following results have obtained. (a) A uranium density of 3.8 g/cm3 is a good value of the Silicide fuel for JRR-4. (b) In the case of TRIGA fuel, a uranium weight fraction of 40% to the total TRIGA fuel pin weight is one of adequate values. (c) The silicide core shows a good performance on the thermal neutron flux (d) and the TRIGA core can achieve a very high burnup. (author)

  7. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various temperatures

    Indian Academy of Sciences (India)

    K V Sai Srinadh; Nidhi Singh; V Singh

    2007-12-01

    Extremely fine coherent precipitates of ordered Ti3Al and relatively coarse incoherent precipitates of 2 silicide exist together in the near -titanium alloy, Timetal 834, in the dual phase matrix of primary and transformed . In order to assess the role of these precipitates, three heat treatments viz. WQ, WQ–A and WQ–OA, were given to have no precipitates, Ti3Al and silicide and only silicide precipitates in the respective conditions. Tensile properties in the above three heat treated conditions were determined at room temperature, 673 K and 873 K. It was observed that largely Ti3Al precipitates were responsible for increase in the yield strength and decrease in ductility in this alloy.

  8. Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

    Science.gov (United States)

    Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

    2014-12-01

    In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

  9. Progress in alkaline peroxide dissolution of low-enriched uranium metal and silicide targets

    International Nuclear Information System (INIS)

    This paper reports recent progress on two alkaline peroxide dissolution processes: the dissolution of low-enriched uranium metal and silicide (U3Si2) targets. These processes are being developed to substitute low-enriched for high-enriched uranium in targets used for production of fission-product 9'9Mo. Issues that are addressed include (1) dissolution kinetics of silicide targets, (2) 99Mo lost during aluminum dissolution, (3) modeling of hydrogen peroxide consumption, (4) optimization of the uranium foil dissolution process, and (5) selection of uranium foil barrier materials. Future work associated with these two processes is also briefly discussed. (author)

  10. Silicide Nanopowders as Low-Cost and High-Performance Thermoelectric Materials

    Science.gov (United States)

    Chen, Renkun

    2013-06-01

    Thermoelectric devices directly convert heat into electricity and are very attractive for waste heat recovery and solar energy utilization. If thermoelectric devices can be made sufficiently efficient and inexpensive, then they will become a transformative energy technology that can tap a significant portion (10-20%) of the vast amount of heat existing in nature as well as industrial processes. Nanopowders of Earth-abundant, silicide-based materials, such as Mg2Si and its alloys, provide a unique opportunity to realize this goal. This article will present an overview of recent advances in the synthesis and thermoelectric properties of silicide-based nanostructured materials.

  11. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    OpenAIRE

    Vlasova M.; Kakazey M.; Gonzales-Rodriguez J.G.; Dominguez G.; Ristić Momčilo M.; Scherbina O.; Tomila T.; Isaeva L.; Timofeeva I.I.; Bukov A.

    2002-01-01

    The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 ...

  12. Low enriched aluminide and silicide fuel element technology at B and W (USA)

    International Nuclear Information System (INIS)

    Babcock and Wilcox is fabricating full size fuel elements with low enriched uranium silicide and uranium aluminide. BandW also provides high enrichred U3O8 and UA Lsub(x) for United States Research Reactors, and Test Research and Training Reactors (TRTR). BandW and Argonne National Laboratry (ANL) are actively involved in the Reduced Enrichment Research and Test Reactor (RERTR) Program and have undertaken a joint effort in which BandW is fabricating two Oak Ridge Reactor (ORR ) elements with uranium silicide fuel. During plate development, fuel plates were fabricated with compacts containing U3SiAl and U3Si2 fuel. (author)

  13. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    OpenAIRE

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Tim

    2013-01-01

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035°C in an Ar/H2 atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the {110} planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer ...

  14. Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

    International Nuclear Information System (INIS)

    The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 °C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.

  15. Silicon Framework-Based Lithium Silicides at High Pressures.

    Science.gov (United States)

    Zhang, Shoutao; Wang, Yanchao; Yang, Guochun; Ma, Yanming

    2016-07-01

    The bandgap and optical properties of diamond silicon (Si) are not suitable for many advanced applications such as thin-film photovoltaic devices and light-emitting diodes. Thus, finding new Si allotropes with better bandgap and optical properties is desirable. Recently, a Si allotrope with a desirable bandgap of ∼1.3 eV was obtained by leaching Na from NaSi6 that was synthesized under high pressure [Nat. Mater. 2015, 14, 169], paving the way to finding new Si allotropes. Li is isoelectronic with Na, with a smaller atomic core and comparable electronegativity. It is unknown whether Li silicides share similar properties, but it is of considerable interest. Here, a swarm intelligence-based structural prediction is used in combination with first-principles calculations to investigate the chemical reactions between Si and Li at high pressures, where seven new compositions (LiSi4, LiSi3, LiSi2, Li2Si3, Li2Si, Li3Si, and Li4Si) become stable above 8.4 GPa. The Si-Si bonding patterns in these compounds evolve with increasing Li content sequentially from frameworks to layers, linear chains, and eventually isolated Si ions. Nearest-neighbor Si atoms, in Cmmm-structured LiSi4, form covalent open channels hosting one-dimensional Li atom chains, which have similar structural features to NaSi6. The analysis of integrated crystal orbital Hamilton populations reveals that the Si-Si interactions are mainly responsible for the structural stability. Moreover, this structure is dynamically stable even at ambient pressure. Our results are also important for understanding the structures and electronic properties of Li-Si binary compounds at high pressures. PMID:27302244

  16. Review of research and development work into silicide fuels

    International Nuclear Information System (INIS)

    Available data on the behaviour of silicide fuels under irradiation were judged as satisfactory (Safety Evaluation Report - NUREG - 1313) to initiate, in 1989, the procedure of conversion authorisation for OSIRIS reactor. Nevertheless, it was believed essential to check the performance of fuel elements manufactured according to the specifications for the OSIRIS reactor under irradiation and in defined conditions. To schedule specific experiments to answer the safety authority team specific questions. In addition, the question of increasing the density (above the reference density of 4.8 Utot/cm3) was examined in collaboration with CERCA as part of a research program. All these reflections led the CEA to undertake a large-scale irradiation programme. Analytical experiments have shown: No cladding failure was detected during the experiment; The thick core plate expanding is similar as nominal thickness core plates; The tests carried out confirm that U3Si2 fuel (4,8 g Utot/cm3) performs well under irradiation; Some of the manufacturing tolerances without any doubt can be increased without altering performance under irradiation. This will not take place for a further 1 or 2 years. e are waiting for the analysis of the results from the EPSILON irradiation experiment to make possible modifications to the OSIRIS cladding failure detection thresholds detection system. Once the tests presently scheduled have been completed, it might be possible to use a fuel with a uranium density about 30% greater than the reference fuel. This will make possible to meet economical targets. The aim of converting ORPHEE and RHF type reactors cannot be achieved merely by optimising actual technology because of the additional density increasing. Now the question is to be sure that research into density increasing should be continued. If so, for which purpose and for which reactors? It is not planed in the next ten years to implement and qualify a new manufacture process. Then an international

  17. Water splitting and electricity with semiconducting silicides in sunlight

    Energy Technology Data Exchange (ETDEWEB)

    Demuth, Martin [Max-Planck-Institut fuer Bioanorganische Chemie, Muelheim an der Ruhr (Germany); H2 Solar GmbH, Loerrach (Germany); Kerpen, Klaus; Kuklya, Andriy; Wuestkamp, Marc-Andre [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany)

    2010-07-01

    Generation of hydrogen and oxygen from water is described using mainly the semiconductor titanium disilicide as catalyst and halogen light which closely mimics solar radiation. The reactions are carried out under non-aerobic conditions, i.e., under nitrogen. High efficiencies are reached at 1.1-1.2 bar pressure. In the first phase of these reactions the catalytically active centers are built up. During this phase of reaction the kinetics of the water splitting process is growing in and leads to a linear dependence in the further course of the reactions which consists of >96% water splitting to yield hydrogen and oxygen in a 2:1 ratio. Hydrogen is partially and reversibly stored physically, depending on temperature. Oxygen behaves differently since it is stored entirely under the applied reaction conditions (50-80 C and light) and can be liberated from storage upon heating the slurries in the dark. This allows convenient separation of hydrogen and oxygen. The stability of titanium disilicide has been positively tested over several months. This material is abundant and inexpensive besides that it absorbs most of the solar radiation. Further, XRD and XPS studies show that titanium disilicide is 80% crystalline and the oxide formation is limited to a few molecular layers in depth. By using labeled water it was shown that labeled dioxygen appears in the gas phase of such reactions, this showing definitively that hydrogen evolution occuring here stems from photochemical splitting of water. Further, water splitting is part of a project which involves photoelectrochemistry and in which the silicides are used as light-receiving electrode and transition metal-coated anodes serve to split water. (orig.)

  18. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  19. Magnetron sputter deposition of boron and boron carbide

    International Nuclear Information System (INIS)

    The fabrication of X-ray optical coatings with greater reflectivity required the development of sputter deposition processes for boron and boron carbide. The use of high density boron and boron carbide (B4C) and a vacuum-brazed target design was required to achieve the required sputter process stability and resistance to the thermal stress created by high rate sputtering. Our results include a description of the target fabrication procedures and sputter process parameters necessary to fabricate B4C and boron modulated thin film structures. (orig.)

  20. Real-time monitoring of the silicidation process of tungsten filaments at high temperature used as catalysers for silane decomposition

    International Nuclear Information System (INIS)

    The scope of this work is the systematic study of the silicidation process affecting tungsten filaments at high temperature (1900 °C) used for silane decomposition in the hot-wire chemical vapour deposition technique (HWCVD). The correlation between the electrical resistance evolution of the filaments, Rfil(t), and the different stages of the their silicidation process is exposed. Said stages correspond to: the rapid formation of two WSi2 fronts at the cold ends of the filaments and their further propagation towards the middle of the filaments; and, regarding the hot central portion of the filaments: an initial stage of silicon dissolution into the tungsten bulk, with a random duration for as-manufactured filaments, followed by the inhomogeneous nucleation of W5Si3 (which is later replaced by WSi2) and its further growth towards the filaments core. An electrical model is used to obtain real-time information about the current status of the filaments silicidation process by simply monitoring their Rfil(t) evolution during the HWCVD process. It is shown that implementing an annealing pre-treatment to the filaments leads to a clearly repetitive trend in the monitored Rfil(t) signatures. The influence of hydrogen dilution of silane on the filaments silicidation process is also discussed. - Highlights: • The silicidation process of tungsten filaments at 1900 °C has been elucidated. • The silicidation process is correlated with the electrical resistance evolution. • Hydrogen dilution of silane delays the precipitation of silicides. • A thermal treatment of the filaments makes the silicidation process repeatable. • Raman spectroscopy and EDX analysis allow the tungsten silicides identification

  1. Schottky barrier MOSFET structure with silicide source/drain on buried metal

    Institute of Scientific and Technical Information of China (English)

    Li Ding-Yu; Sun Lei; Zhang Sheng-Dong; Wang Yi; Liu Xiao-Yan; Han Ru-Qi

    2007-01-01

    In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal (SSDOM). The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel case. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V (for ErSi) and the bottom barrier is 0.6 eV (for CoSi2).Compared with the corresponding conventional Schottky barrier MOSFET structures (CSB), the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability (1.2 mA/μm at Vds = 1 V, Vgs = 2 V) and the high Ion/Imin ratio (106) are both achieved by applying the SSDOM structure.

  2. Mechanism for silicide formation in Ag(Cu)/Si and Ag(Co)/Si upon annealing

    International Nuclear Information System (INIS)

    Ag(Co) alloy and Ag(Cu) alloy films were prepared on HF-cleaned Si by using DC magnetron sputtering and were then annealed in vacuum (3 X 10-5 Torr) to investigate the effects of Co and Cu precipitation on the material properties of the Ag alloy films and on the reaction between alloy element (Co, Cu) and Si. The annealing of a Ag(Cu)/Si structure for 30 min at 200 .deg. C produced a uniform Cu3Si layer at the Ag(Cu)-Si interface, as a result of reaction of the segregated Cu with Si. This lowered the resistivity from 5.3 to 3.2 μΩ-cm, and also led to improved adhesion properties. In contrast, the annealing of a Ag(Co)/Si structure at 400 .deg. C produced a cobalt silicide in the Ag(Co) film, resulting from reaction of the diffused Si with Co precipitates, probably at the grain boundaries. The Co silicide formed at 400 .deg. C slightly increased the resistivity, which continued to decrease at temperatures of 500 .deg. C and higher. The different diffusing species in formation of Co silicide and Cu silicide may be attributed to the difference in the temperature of silicde formation and the mobility of the species.

  3. Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

    International Nuclear Information System (INIS)

    The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1x1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five (√(3)x√(3)) periodic bands have been observed in thicker films. Taking the (2√(3)x2√(3)) periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1x1) structure. Of the (√(3)x√(3)) periodic bands observed in thick films, four of them are well explained by the folding of the (1x1) bands into a (√(3)x√(3)) periodicity. Regarding the other band, the three (√(3)x√(3)) periodic bands would originate from the electronic states related to the inner Si layers that form a (√(3)x√(3)) structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.

  4. High pressure studies on uranium and thorium silicide compounds: Experiment and theory

    DEFF Research Database (Denmark)

    Yagoubi, S.; Heathman, S.; Svane, A.;

    2013-01-01

    , for ThSi, USi and USi2, respectively. At ambient conditions, the uranium silicides crystallize in tetragonal structures (space groups: I4/mmm for USi and I41/amd for USi2), while ThSi adopts an orthorhombic structure (space group: Pbnm) (including an anharmonic analysis of the silicon). These...

  5. Nanoscale metal-silicide films prepared by surfactant sputtering and analyzed by RBS

    International Nuclear Information System (INIS)

    Surfactant sputtering has been applied to modify the surface structure of Si substrates and to produce ultrathin metal-silicide films with nickel and platinum surfactants, utilizing the steady state coverage of a Si-substrate surface with surfactant atoms simultaneously during sputter erosion by combined ion irradiation and surfactant atom deposition. Si (1 0 0) substrates were eroded using 5 keV Xe-ions and 10-30 keV Ar ions at incident angles of 65o and 70o with fluences of up to 2 x 1018/cm2 under continuous sputter deposition of platinum and nickel from targets irradiated simultaneously by the same ion beam. These surfactant atoms form metal-silicides in the surface near region and strongly modify the substrate sputter yield and the surface nanostructure. Atomic force microscopy and scanning electron microscopy were carried out to observe a transition of surface topography from ripple to relief patterns, granular patterns or smooth surfaces. The Si and metal sputter yield as function of the steady state metal coverage were determined by combination of Rutherford-backscattering spectroscopy (RBS) and profilometry. The composition and the depth distributions of metal-silicide films were analyzed via high-resolution RBS and transmission electron microscopy. We show that RBS results in comparison with SRIM and TRIDYN sputter yield simulations allows us to identify the silicide surface structure on the nanometer scale.

  6. Quantitative determination of crystalline phases in the silicide fuel by the Rietveld method

    International Nuclear Information System (INIS)

    Uranium silicide has been used as nuclear fuel in modern research reactors. The nuclear fuel is based on a dispersion of uranium silicide and aluminum powder to form a fuel meat fabricated according to powder metallurgy techniques. The U3Si2 powder should attend technical specifications referring to the major crystalline constituent, which must be more than 80 wt% of U3Si2. IPEN/CNEN-SP currently produces the U3Si2-Al fuel to supply the IEA-R1 research reactor, which operates at 3.5 MW in order to produce primary radioisotopes used in nuclear medicine. The uranium concentration in the fuel should be increased from 3.0 gU/cm3 to 4.8 gU/cm3 in order to guarantee future fuel supplying for a new research reactor designed for radioisotope production, the Brazilian Multipurpose Research Reactor - RMB, which is planned to be constructed in the country. The new fuel will operate under much more severe conditions than the ones found currently in IEA-R1 reactor. So, the increasing of uranium concentration into the fuel requests urgent development of a new technology to qualify the uranium silicide powder produced by IPEN-CNEN/SP, referring to the characterization of crystalline phases. This paper describes a methodology developed to quantify crystalline phases in the silicide fuel powder, which is based in the Rietveld method for crystalline structures refinement. (author)

  7. Synthesis and characterization of silicide coating on niobium alloy produced using molten salt method

    International Nuclear Information System (INIS)

    Nb based alloys are promising structural materials for high temperature reactors due to their strength at higher temperatures. However Nb based alloys undergoes substantial oxidation at high temperatures. In order to improve its oxidation resistance property at high temperatures (>400 °C) a protective layer must be provided to avoid direct contact of the component to atmospheric oxygen. In the present work, attempts have been made to obtain silicide coatings on Nb alloy using molten salt method. In this method, deposition of silicon is a multistep process. Metallic Si produced by the subsequent reactions in the molten salt diffuses and an oxidation resistant silicide coating forms on the surface of substrate. To study the variation in the thickness of coated layer on the Nb alloy, experiments were carried out at different temperature and time periods. These silicide coated samples were characterized using optical, SEM and XRD techniques. Based on these results mechanism of silicide coating on Nb alloys has been discussed in detail. (author)

  8. Mechanical properties of niobium alloy with molybdenum-hafnium-silicide coating

    International Nuclear Information System (INIS)

    The method of bending loading permits studying mechanical characteristics (σ σ0.2 and deflection f) in the composite of niobium alloy with silicide coating on molybdenum and hafnium base. Results of mechanical characteristics are compared with microstructural peculiarities of the failure development. Criteria which determine strength and plastic properties of the composite as dependent on the structural state are established

  9. A thermodynamic assessment for synthesizing transition metal silicides by the combustion synthesis process

    International Nuclear Information System (INIS)

    Transition metal silicides have important applications in various disciplines. These include uses as interconnects in chips, as coatings, as heating elements, etc. As their uses increased, various processing techniques were adopted to produce them. These vary from chemical/physical vapor deposition, rapid thermal processing, and sputtering for thin film processing; traditional vacuum casting and powder metallurgical routes are used to produce bulk samples. In this paper, the authors are interested in those transition metal silicides which have the potential for use in the bulk form, possibly in the aerospace or other demanding applications. The primary requirements are high refractoriness, low density, high strength and good oxidation resistance. It is the oxidation resistance that makes the silicides better candidates as compared to the other intermetallics. Meschter argued that most engineering materials retain substantial strength up to 80% of their melting points. Therefore, for an operating temperature of 1500C, the melting point of the typical candidate may be 1950C, while the limit in density can be defined by the density of Ni (8.75 gn/cc). As an alterative, combustion synthesis (CS) processing may prove to be a viable route for producing these transition metal silicides. In this process, and exothermic reaction is initiated in a compact containing stoichiometric mixture of elemental powders

  10. Boron cures cancer

    International Nuclear Information System (INIS)

    In this work the authors cite a few examples of the use of radiopharmaceuticals for diagnostic and therapeutic purposes in nuclear medicine. They point to the possibility of boron neutron capture therapy and the use for the neutron capture therapy of other light elements.

  11. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  12. Process for microwave sintering boron carbide

    International Nuclear Information System (INIS)

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy

  13. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  14. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    International Nuclear Information System (INIS)

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

  15. Exchange reactions of plutonium with silicides and estimation of the enthalpy of the formation of Pu5Si3

    International Nuclear Information System (INIS)

    An approximate ΔHof,298 value has been determined for Pu5Si3 through a study of exchange reactions of selected metal silicides with plutonium. The reactions were carried out by arc-melting. Results show that Pu5Si3 is intermediate in stability between V3Si and Mo3Si, and has a ΔHof,298 of -52±13 kJ/g-atom. Estimates of ΔHof,298 for the higher plutonium silicides are: Pu3Si2 -54, PuSi -60, Pu3Si5 -58, and PuSi2 -56 kJ/g-atom with uncertainties of ±18 kJ/g-atom. The plutonium silicides are found to be more stable than both the thorium and uranium silicides. (orig.)

  16. Sintered boron, production and properties

    International Nuclear Information System (INIS)

    Microhardness HV, tensile properties and Young modulus of sintered boron of different porosity were studied. It was shown that with density growth tensile properties improve. HV and brittle-ductile transition temperature Tsub(b) of sintered boron on the one hand and for silicon and titanium carbide on the other were compared and discussed. It was noted that the general level of HV and Tsub(b) for boron is rather high and at similar relative temperatures these characteristics are much higher. Temperature dependences of linear expansion coefficient, thermal capacity, thermal and temperature conductivity of sintered boron of 20% porosity were studied. Gruneisen parameter was evaluated

  17. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties. PMID:19687534

  18. Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vaporvacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2was formed in a neodymium-implanted silicon thinfilm during the as-implanted state, but there was only single neodymium silicide compound in the post-annealed state,and the phase changed from NdSi2 to Nd5Si4 with increasing annealing temperature. The blue-violetluminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence(PL) increased with increasing the neodymium ion fluence. Moreover,the photoluminescence was closely dependent onthe temperature of rapid thermal annealing (RTA). A mechanism ofphotoluminescence was discussed.

  19. Development of fused slurry silicide coatings for tantalum reentry heat shields

    Science.gov (United States)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  20. Development of a fused slurry silicide coating for the protection of tantalum alloys

    Science.gov (United States)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  1. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    Science.gov (United States)

    Beckmann, C.; Zhang, K.; Hofsäss, H.; Brüsewitz, C.; Vetter, U.; Bharuth-Ram, K.

    2015-12-01

    The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  2. Leakage current and deep levels in CoSi{sub 2} silicided junctions

    Energy Technology Data Exchange (ETDEWEB)

    Codegoni, D. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Carnevale, G.P. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); De Marco, C. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Mica, I. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Polignano, M.L. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy)]. E-mail: marialuisa.polignano@st.com

    2005-12-05

    In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi{sub 2} layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi{sub 2} formation conditions. The mechanism responsible for the leakage of CoSi{sub 2} junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess.

  3. Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template

    International Nuclear Information System (INIS)

    Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

  4. Babcock and Wilcox plate fabrication experience with uranium silicide spherical fuel

    International Nuclear Information System (INIS)

    This report is written to present the fuel fabrication experience of Babcock and Wilcox using atomized spherical uranium silicide powder. The intent is to demonstrate the ability to fabricate fuel plates using spherical powder and to provide useful information proceeding into the next phase of work using this type of fuel. The limited quantity of resources- spherical powder and time, did not allow for much process optimizing in this work scope. However, the information contained within provides optimism for the future of spherical uranium silicide fuel plate fabrication at Babcock and Wilcox.The success of assembling fuel elements with spherical powder will enable Babcock and Wilcox to reduce overall costs to its customers while still maintaining our reputation for providing high quality research and test reactor products. (author)

  5. RA-3 reactor core with uranium silicide fuel elements P-07 type

    International Nuclear Information System (INIS)

    Following the studies on the utilization of fuel elements (FE) containing uranium silicide, core of the RA-3 was analyzed with several calculation models. At first, the present situation, i.e. the core charged with normal FE (U3O8), has been analyzed to validate the simulation methodology comparing with experimental results and to establish reference data to 5 and 10 MW able to be compared with future new situations. Also, CITVAP's nuclear data libraries to be used in irradiation experiment planning were completed. The results were satisfactory and were applied to the study of the core containing P-07 FE [U3Si2], in face of a future core change. Comparing with the performance of the U3O8FE, the silicides ones show the following advantages: - average burnup: 45 % greater; -extraction burnup increase 12 %; and, -the residence time [in full power days] could be a 117 % greater. (author)

  6. Formation of rare earth silicide clusters on Si(111)7 x 7

    International Nuclear Information System (INIS)

    Magic clusters on surfaces are of high interest because of their fascinating quantum properties and their possible application in future nanodevices. Here, the formation process as well as the structural and electronic properties of dysprosium silicide clusters on the Si(111)7 x 7 surface were studied using scanning tunneling microscopy (STM). The dysprosium silicide clusters were grown by molecular beam epitaxy using the 7 x 7 reconstructed Si(111) surface as a template for cluster formation using submonolayer metal coverages and moderate annealing temperatures. It was found that the clusters grow self-organized preferentially on the faulted halves of the 7 x 7 unit cells, and a variety of cluster shapes could be observed. At appropriate growth conditions, the formation of magic clusters, which appear centered on the 7 x 7 half unit cells, could be achieved.

  7. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    Science.gov (United States)

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2. PMID:27243944

  8. Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

    International Nuclear Information System (INIS)

    This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions

  9. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing

    International Nuclear Information System (INIS)

    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  10. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Tim

    2013-01-01

    channels, which are aligned with the intersections of the (100) surface of the wafer and the {110} planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission...... electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation....

  11. Formation of silicide based oxidation resistant coating over Mo-30 wt. % W alloy

    International Nuclear Information System (INIS)

    Silicide based oxidation resistant coatings were developed over Mo-30 W alloy using halide activated pack cementation process. Coated samples were characterized by SEM, optical microscopy, EDX and hardness measurements. Isothermal oxidation tests of coated alloy performed at 1000 deg C for 25h revealed a smaller weight gain at the initial stage of oxidation followed by no weight change indicating the protective nature of the coating. (author)

  12. Calculation of xenon 135 poisoning reactivity of RSG-GAS silicide fuelled

    International Nuclear Information System (INIS)

    Calculation of xenon 135 poisoning reactivity of RSG-GAS silicide fuelled. One of the important reactivity effects during reactor operation is a xenon poisoning, the reactivity depends on the power and time operation of reactor. The calculation was performed for RSG-GAS oxide 2,96 gr U/cc, silicide 2,96 gr U/cc silicide 3,55 gr U/cc fuelled using Xen Sam code, that is the xen sam code reform. In Xen Sam code, the xenon concentration is obtained by solving the simultaneous differential equation by means of limit different method. The results showed that the calculation values are close to the experiments. The equilibrium xenon reactivity will be higher if there is the increasing in the uranium density, while there is no significant change in the peak of xenon and dead time of the reactor. It shown that there is no influence in xenon reactivity for the same power levels and operation time more than 50 hours. At the other hand, if the operation time lest than 50 hours, there will be influences in equilibrium xenon reactivity, peak xenon and dead time reactor. For different power levels with the same operation time will be a significant influence to the xenon reactivity

  13. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    Energy Technology Data Exchange (ETDEWEB)

    Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation); Senkov, V. M. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation); Nalivaiko, O. Y. [JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus); Novikau, A. G.; Gaiduk, P. I. [Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  14. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    Science.gov (United States)

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.

  15. Effect of TiOx on the formation of titanium silicide layer

    International Nuclear Information System (INIS)

    The Al/TiOx/Si, Ti/TiOx/Si, and Mo/TiOx/Si interfaces are studied, before and after thermal treatment, by secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The metal layer is selected with regard to the formation of a titanium silicide layer. The reductive nature of the metal was found to be very significant in the interdiffusion of Si and Ti (from titanium oxide). This interdiffusion has the advantage to form a thin titanium silicide layer, which is known to have low contact resistivity. The SIMS, RBS, XPS, and XRD analyses show that after annealing for 10 min at 850 deg. C under hydrogen ambient, titanium silicide interfacial layers such as Ti5Si3 and TiSi2 C54 were formed in the case of Al/TiOx/Si and Ti/TiOx/Si structures, respectively. There is no significant reaction between Mo and TiOx and no Ti and Si interfacial reaction in the Mo/TiOx/Si system. With thermodynamic considerations, we confirm all the results found in this study

  16. Durability of Silicide-Based Thermoelectric Modules at High Temperatures in Air

    Science.gov (United States)

    Funahashi, Ryoji; Matsumura, Yoko; Barbier, Tristan; Takeuchi, Tomonari; Suzuki, Ryosuke O.; Katsuyama, Shigeru; Yamamoto, Atsushi; Takazawa, Hiroyuki; Combe, Emmanuel

    2015-08-01

    Thermoelectric modules consisting of n-type Mn2.7Cr0.3Si4Al2 and p-type MnSi1.75 legs have been fabricated by use of composite pastes of Ag with Pt or Pd. For the module prepared by Ni-B plating and with Ag paste, the specific power density reached 370 mW/cm2 at a heat-source temperature of 873 K. Ni-B plating 5 μm thick on the surfaces of the silicide legs reduced both the internal resistance and degradation of the power generated by silicide modules at temperatures up to 873 K in air. This is because of oxidation of Al diffusing into the n-type legs and reaching the Ag electrodes on both the hot and cold sides. Ni-B plating can suppress Al diffusion into n-type legs. However, cracking was observed parallel to the contact surface in the middle of the Ni-B plating layer on the p-type legs. It was also found that incorporating Pt or Pd into the Ag paste effectively suppressed degradation of the contact resistance between the silicide legs and the Ag electrodes.

  17. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    Science.gov (United States)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  18. Boron thermal regeneration system

    International Nuclear Information System (INIS)

    An ion exchanger which allows flow in both directions along a selected flow path is described. A separator plate divides the exchanger tank into two chambers each of which has a flow conduit so that flow may enter or leave from either chamber while prohibiting the resin particles from migrating from one side of the tank to the other. This ion exchanger permits a dual-directional flow process to be practised which results in immediate changes in the boron concentration within a nuclear reactor coolant system even if the ion exchanger resins have not been completely equilibrated during a previous operation. (author)

  19. BORONIZING OF STEEL

    Directory of Open Access Journals (Sweden)

    Arzum ULUKÖY

    2006-02-01

    Full Text Available Boride layer has many advantages in comparison with traditional hardening methods. The boride layer has high hardening value and keeps it's hardeness at high temperatures, and it also shows favorible properties, such as the resistance to wear, oxidation and corrosion. The process can be applied at variety of materials, for instance steel, cast iron, cast steel, nickel and cobalt alloys and cermets. In this rewiew, boronizing process properties, boride layer on steel surfaces and specifications and the factors that effect boride layer are examined

  20. Safeguarding subcriticality during loading and shuffling operations in the higher density of the RSG-GAS's silicide core

    International Nuclear Information System (INIS)

    The core conversion program of the RSG-GAS reactor is to convert the all-oxide to all-silicide core. The silicide equilibrium core with fuel meat density of 3.55 gU cm-3 is an optimal core for RSG-GAS reactor and it can significantly increase the operation cycle length from 25 to 32 full power days. Nevertheless, the subcriticality of the shutdown core and the shutdown margin are lower than of the oxide core. Therefore, the deviation of subcriticality condition in the higher silicide core caused by the fuel loading and shuffling error should be reanalysed. The objective of this work is to analyse the sufficiency of the subcriticality condition of the shutdown core to face the worst condition caused by an error during loading and shuffling operations. The calculations were carried out using the 2-dimensional multigroup neutron diffusion code of Batan-FUEL. In the fuel handling error, the calculated results showed that the subcriticality condition of the shutdown higher density silicide equilibrium core of RSG-GAS can be maintained. Therefore, all fuel management steps are fixed in the present reactor operation manual can be applied in the higher silicide equilibrium core of RSG-GAS reactor. (author)

  1. Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon

    International Nuclear Information System (INIS)

    We have extended our recent work on buried silicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si+ ion implantation has been investigated at temperature ≤400C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), x-ray diffraction and four-point-probe measurements were used to determine structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360C for 8 hours followed by an additional step at 400C for one hour produces a continuos NiSi2 layer with a resistivity 44 μΩ cm

  2. A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Chang-Geun [Nano-Bio Electric Devices Team, IT Convergence Technology Research Division, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: cgahn@etri.re.kr; Kim, Tae-Youb; Yang, Jong-Heon; Baek, In-Bok [Nano-Bio Electric Devices Team, IT Convergence Technology Research Division, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (Korea, Republic of); Cho, Won-ju [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Lee, Seongjae [Quantum Photonic Science Research Center and BK21 Program Division of Advanced Research and Education in Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2008-02-15

    A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nickel silicide (Ni{sub 2}Si) formation, resulting in no in-diffusion of Ni into the channel. Next, the second step of the annealing process was performed at 500 deg. C for the formation of mono-nickel silicide (NiSi). Finally, the optimized Ni silicide SD with low resistance (5 {omega}/{open_square}) and a low leakage current was achieved on the UTB. Using the proposed two-step silicide process, UTB RF MOSFET with a gate length of 50 nm a 20-nm UTB was successfully fabricated and showed the good RF properties with a cut-off frequency of 138 GHz.

  3. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  4. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  5. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    The atomic structure and the lattice dynamics of α boron and of B4C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B4C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  6. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  7. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  8. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.; Solak, H.; Cerrina, F. [Univ. of Wisconsin-Madison, Stoughton, WI (United States)] [and others

    1997-04-01

    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  9. The fabrication and performance of Canadian silicide dispersion fuel for test reactors

    International Nuclear Information System (INIS)

    Fuel fabrication effort is now concentrated on the commissioning of large-scale process equipment, defining product specifications, developing a quality assurance plan, and setting up a mini-computer material accountancy system. In the irradiation testing program, full-size NRU assemblies containing 20% enriched silicide dispersion fuel have been Irradiated successfully to burnups in the range 65-80 atomic percent. Irradiations have also been conducted on mini-elements having 1.2 mm diameter holes In their mid-sections, some drilled before irradiation and others after irradiation to 22-83 atomic percent burnup. Uranium was lost to the coolant in direct proportion to the surface area of exposed core material. Pre-irradiation in the intact condition appeared to reduce in-reactor corrosion. Fuel cores developed for the NRU reactor are dimensionally very stable, swelling by only 6-8% at the very high burnup of 93 atomic percent. Two important factors contributing to this good performance are cylindrical clad restraint and coarse silicide particles. Thermal ramping tests were conducted on irradiated silicide aspersion fuels. Small segments of fuel cores released 85Kr starting at about 520 deg. C and peaking at about 680 deg C. After a holding period of 1 hour at 720 deg. C a secondary 85Kr peak occurred during cooling (at about 330 deg. C) probably due to thermal contraction cracking. Whole mini-elements irradiated to 93 atomic percent burnup were also ramped thermally, with encouraging results. After about 0.25 h at 530 deg. C the aluminum cladding developed very localized small blisters, some with penetrating pin-hole cracks preventing gross pillowing or ballooning. (author)

  10. The new ternary silicide Gd5CoSi2: Structural, magnetic and magnetocaloric properties

    International Nuclear Information System (INIS)

    Gd5CoSi2 was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr5B3-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) A as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd5CoSi2 reveal a ferromagnetic behaviour below TC=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change ΔTad is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T. -- Graphical abstract: The adiabatic temperature change ΔTad was determined by combining the heat capacity measurements and the magnetization data. As expected, a peak near the Curie temperature of the Gd5CoSi2 ternary silicide is observed, with a maximum of ΔTad around 3.1 and 5.9 K for ΔH=2 and 4.6 T, respectively. Display Omitted Research Highlights: → We prepare and characterize for the first time the ternary silicide Gd5CoSi2. → Gd5CoSi2 crystallizes in the tetragonal structure deriving from the Cr5B3-type. → Gd5CoSi2 shows a ferromagnetic behaviour below 168 K associated with magnetocaloric properties.

  11. High pressure studies on uranium and thorium silicide compounds: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Yagoubi, S., E-mail: said.yagoubi@u-psud.fr [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, D-76125 Karlsruhe (Germany); LEEL SIS2M UMR 3299 CEA-CNRS, CEA Saclay, F-91191 Gif-Sur-Yvette (France); Departement de Chimie, Universite Paris-Sud 11, 91405 Orsay (France); Heathman, S. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, D-76125 Karlsruhe (Germany); Svane, A. [Department of Physics, University of Aarhus, DK 8000, Aarhus C (Denmark); Vaitheeswaran, G. [ACRHEM, University of Hyderabad, Hyderabad 500 046, Andhra Pradesh (India); Heines, P.; Griveau, J.-C. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, D-76125 Karlsruhe (Germany); Le Bihan, T. [European Synchrotron Radiation Facility, 38043 Grenoble (France); Idiri, M.; Wastin, F.; Caciuffo, R. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, D-76125 Karlsruhe (Germany)

    2013-01-05

    Highlights: Black-Right-Pointing-Pointer High pressure studies on uranium and thorium silicide compounds. Black-Right-Pointing-Pointer Bulk modulus B{sub 0} at ambient pressure are obtained from the measured P-V relations. Black-Right-Pointing-Pointer Experimental results are well reproduced by the calculated equation of state. Black-Right-Pointing-Pointer The electronic densities of states are calculated for ThSi, USi and USi2. - Abstract: The actinide silicides ThSi, USi and USi{sub 2} have been studied under high pressure using both theory and experiment. High pressure synchrotron X-ray diffraction experiments were performed on polycrystalline samples in diamond anvil cells at room temperature and for pressures up to 54, 52 and 26 GPa, for ThSi, USi and USi{sub 2}, respectively. At ambient conditions, the uranium silicides crystallize in tetragonal structures (space groups: I4/mmm for USi and I4{sub 1}/amd for USi{sub 2}), while ThSi adopts an orthorhombic structure (space group: Pbnm) (including an anharmonic analysis of the silicon). These structures are found to be stable with no structural transitions observed up to the highest pressures achieved. The zero-pressure bulk modulus B{sub 0} and its pressure derivative B{sub 0}{sup Prime} at ambient pressure are obtained from the measured P-V relations. The experiments are accompanied by first principles calculations using the full-potential linear muffin-tin orbital method within the generalized gradient approximation for exchange-correlation effects. Experimental results are well reproduced by the calculated equation of state and ground state properties.

  12. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  13. Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effect of annealing temperature on the formation of the PtSi phase, distribution of silicides and the surface morphologies of silicides films is investigated by XPS, AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-Si with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.

  14. Electrochemical deposition of coating from carbide, boride and silicide of IV-VIA group metals in ion melts

    International Nuclear Information System (INIS)

    The prehistory of the development of methods of production of metal-like refractory coatings (titanium, tantalum, niobium, vanadium, zirconium carbides, borides and silicides) with the help of high-temperature electrochemical synthesis (HTES) in ionic melts is described. A review is made on studies into the process of HTES of refractory metal borides, carbides and silicides, manufacture conditions for the coatings and electrolyte compositions (oxide, oxide-fluoride, chloride, chloride-fluoride melts). Structure and properties of coatings produced by the method of HTES are under consideration

  15. Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties

    International Nuclear Information System (INIS)

    In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal–oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I–V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures

  16. Estimations on uranium silicide fuel prototypes for their irradiation and postirradiation

    International Nuclear Information System (INIS)

    The 'Silicide' project includes the qualification of this type of research reactor fuel to be used i.e. in the Argentine RA-3 and to confirm CNEA's role as an international supplier. The present paper shows complementary basic information for P-04 prototype post-irradiation, which is already under way, and some parameter values related to the new P-06 prototype to be taken into account for planning its irradiation and post-irradiation. The reliability of these values has been evaluated through comparison with experimental results. The reported results contribute, also, to a parallel study on the nuclear data libraries used in calculations for this type of reactor. (author)

  17. Modeling the band structure of the higher manganese silicides starting from Mn$_4$Si$_7$

    OpenAIRE

    V., Vijay Shankar; Tseng, Yu-Chih; Kee, Hae-Young

    2016-01-01

    The higher manganese silicides (HMS), with the chemical formula MnSi$_x$($x \\approx 1.73 - 1.75$), have been attracted a lot of attention due to their potential application as thermoelectric materials. While the electronic band structures of HMS have been previously studied using first principle calculations, the relation between crystal structures of Mn and Si atoms and their band structures is not well understood. Here we study Mn$_4$Si$_7$ using first principle calculations and show that a...

  18. Transient behavior of silicide plate-type fuel during reactivity initiated accident conditions

    International Nuclear Information System (INIS)

    The results of transient experiments using a low enriched uranium silicide mini-plate fuel (19 w/o 235U, 4.8gU/c.c.) for research reactors are described. Studies were addressed mainly to clarifying 1) fuel failure threshold and failure mechanism, and 2) dimensional stability of the fuel plate at the temperature ranged from 140degC to 970degC. The pulse irradiation of the mini-plate fuels was performed in the Nuclear Safety Research Reactor (NSRR) at the Japan Atomic Energy Research Institute (JAERI). (author)

  19. Synthesis of metallic silicide fullerenes and the characteristics thereof by mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    CHEN YiChi; GUO Liang; ZHU LiQun

    2007-01-01

    Direct current arc discharge is used for the study on the synthesis of metallofullerenes (MFs) to discover whether there exist metallic silicide fullerenes and silicon fullerenes. The resultant components are isolated by the multistage high-performance liquid chromatography (HPLC) and analyzed with the Time-of-Flight (TOF) mass spectrometry. Results show that there exist fullerenes such as SiC69, YSi2C64, YSi2C78, Y3Si2C78 as well as Y2Si2C90 which are structurally similar to (Y2C2)@C82.

  20. Synthesis of metallic silicide fullerenes and the characteristics thereof by mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Direct current arc discharge is used for the study on the synthesis of metallo-fullerenes (MFs) to discover whether there exist metallic silicide fullerenes and silicon fullerenes. The resultant components are isolated by the multistage high-performance liquid chromatography (HPLC) and analyzed with the Time-of-Flight (TOF) mass spectrometry. Results show that there exist fullerenes such as SiC69, YSi2C64, YSi2C78, Y3Si2C78 as well as Y2Si2C90 which are structurally similar to (Y2C2)@C82.

  1. Neutronic calculations of PARR-1 cores using leu-silicide fuel. [leu (low enriched uranium)

    Energy Technology Data Exchange (ETDEWEB)

    Arshad, M.; Bakhtyar, S.; Hayat, T.; Salahuddin, A.

    1991-08-01

    Detailed neutronic calculations have been carried out for different PARR-1 cores utilizing Low Enriched Uranium (LEU) silicide fuel and operating at an upgraded power of 9 MW. The calculations include the search for critical loadings in open and stall ends of the pool, neutronic analysis of the first full power operation and the equilibrium cores. The burnup study of the equilibrium core and calculations for discharged fuel inventory have also been carried out. Further, the reactivity coefficients of the first full power operation core are evaluated for use in the accident analysis.

  2. Oxidation resistant silicide coatings for Nbss/Nb5Si3 in-situ composites

    International Nuclear Information System (INIS)

    Oxidation protective silicide coatings for the new Nbss/Nb5Si3 in-situ composites were prepared by molten salt method. The experiment results indicated that the majority phase in the coating was NbSi2. More Nb5Si3 was formed at the interface between the substrate and NbSi2 layer during the oxidation. The oxidation resistance of the composites was improved by the coating, significantly. The improvement in the oxidation resistance of the composites maybe mainly attributed to the formation of large amount of SiO2 and Al2O3 on surface of coating. (orig.)

  3. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  4. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    Science.gov (United States)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  5. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    International Nuclear Information System (INIS)

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon

  6. Effect of annealing on magnetic properties and silicide formation at Co/Si interface

    Indian Academy of Sciences (India)

    Shivani Agarwal; V Ganesan; A K Tyagi; I P Jain

    2006-11-01

    The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a vacuum of 4 × 10-8 Torr having a deposition rate of about 0.1 Å/s. Reactivity at Co/Si interface is important for the understanding of silicide formation in thin film system. In the present paper, cobalt silicide films were characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the surface and interface morphologies and depth profile, respectively. The roughness of the samples was found to increase up to temperature, 300°C and then decreased with further rise in temperature, which was due to the formation of crystalline CoSi2 phase. The effect of mixing on magnetic properties such as coercivity, remanence etc at interface has been studied using magneto optic Kerr effect (MOKE) techniques at different temperatures. The value of coercivity of pristine sample and 300°C annealed sample was found to be 66 Oe and 40 Oe, respectively, while at high temperature i.e. 748°C, the hysteresis disappears which indicates the formation of CoSi2 compound.

  7. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  8. Mitigation of interfacial silicide reactions for electroplated CoPt films on Si substrates

    Science.gov (United States)

    Oniku, Ololade D.; Arnold, David P.

    2015-12-01

    We report in this paper the influence of film thickness on the material and magnetic properties of electroplated CoPt permanent magnets. Layers of CoPt magnets with film thicknesses ranging from 0.5 μm to 5 μm are deposited into photoresist molds (3.5 mm x 3.5 mm square and 5 μm x 50 μm arrays) on a (100)Si substrate coated with 10 nm/100 nm Ti/Cu adhesion/seed layer. Results show an unexpected reduction in magnetic properties for films below 2 μm thick. This effect is determined to be a consequence of metal-silicide reactions at the substrate interface during annealing leading to the formation of a non-magnetic layer at the interface. Subsequently, a TiN diffusion-barrier layer is added to inhibit the silicide reaction and thereby maintain strong magnetic properties (Hci ∼800 kA/m, Mr/Ms = 0.8) in micron- thick electroplated CoPt layers.

  9. Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties.

    Science.gov (United States)

    Zhang, Chuanzhao; Kuang, Xiaoyu; Jin, Yuanyuan; Lu, Cheng; Zhou, Dawei; Li, Peifang; Bao, Gang; Hermann, Andreas

    2015-12-01

    We present results of an unbiased structure search for stable ruthenium silicide compounds with various stoichiometries, using a recently developed technique that combines particle swarm optimization algorithms with first-principles calculations. Two experimentally observed structures of ruthenium silicides, RuSi (space group P2(1)3) and Ru2Si3 (space group Pbcn), are successfully reproduced under ambient pressure conditions. In addition, a stable RuSi2 compound with β-FeSi2 structure type (space group Cmca) was found. The calculations of the formation enthalpy, elastic constants, and phonon dispersions demonstrate the Cmca-RuSi2 compound is energetically, mechanically, and dynamically stable. The analysis of electronic band structures and densities of state reveals that the Cmca-RuSi2 phase is a semiconductor with a direct band gap of 0.480 eV and is stabilized by strong covalent bonding between Ru and neighboring Si atoms. On the basis of the Mulliken overlap population analysis, the Vickers hardness of the Cmca structure RuSi2 is estimated to be 28.0 GPa, indicating its ultra-incompressible nature. PMID:26576622

  10. Prospect of Uranium Silicide fuel element with hypostoichiometric (Si ≤3.7%)

    International Nuclear Information System (INIS)

    An attempt to obtain high uranium-loading in silicide dispersion fuel element using the fabrication technology applicable nowadays can reach Uranium-loading slightly above 5 gU/cm3. It is difficult to achieve a higher uranium-loading than that because of fabricability constraints. To overcome those difficulties, the use of uranium silicide U3Si based is considered. The excess of U is obtained by synthesising U3Si2 in Si-hypostoichiometric stage, without applying heat treatment to the ingot as it can generate undesired U3Si. The U U will react with the matrix to form U alx compound, that its pressure is tolerable. This experiment is to consider possibilities of employing the U3Si2 as nuclear fuel element which have been performed by synthesising U3Si2-U with the composition of 3.7 % weigh and 3 % weigh U. The ingot was obtained and converted into powder form which then was fabricated into experimental plate nuclear fuel element. The interaction between free U and Al-matrix during heat-treatment is the rolling phase of the fuel element was observed. The study of the next phase will be conducted later

  11. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy.

    Science.gov (United States)

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-12-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy. PMID:26471480

  12. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    Energy Technology Data Exchange (ETDEWEB)

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  13. Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowires

    Science.gov (United States)

    Wang, C. C.; Lai, W. T.; Hsiao, Y. Y.; Chen, I. H.; George, T.; Li, P. W.

    2016-05-01

    We report that the geometry of single-crystalline Si nanowires (NWs) prior to salicidation at 500 °C is the key factor controlling the phase, stress state, and electrical resistivity of the resulting Ni x Si y NWs of width less than 100 nm. This is a radical departure from previous observations of a single phase formation for nickel silicides generated from the silicidation of bulk Si substrates. The phase transition from NiSi for large NWs ( W Si NW  =  250–450 nm) to Ni2Si for small NWs ( W Si NW  =  70–100 nm) is well correlated with the observed volumetric expansion and electrical resistivity variation with the NW width. For the extremely small dimensions of Ni x Si y NWs, we propose that the preeminent, kinetics-based Zhang and d’Heurle model for salicidation be modified to a more thermodynamically-governed, volume-expansion dependent Ni x Si y phase formation. A novel, plastic deformation mechanism is proposed to explain the observed, geometry-dependent Ni x Si y NW phase formation that also strongly influences the electrical performance of the NWs.

  14. Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry

    International Nuclear Information System (INIS)

    The differential scanning calorimetry (DSC) technique is employed to study the formation of different silicide compounds of Zr thin-film deposited on a 100 μm-thick Si (1 0 0) substrate by dc sputtering. A detailed analysis shows that silicide layers start growing at  ∼246 °C that changes to stable ZrSi2 at 627 °C via some compounds with different stoichiometric ratios of Zr and Si. It is further observed that oxygen starts reacting with Zr at  ∼540 °C but a stoichiometric ZrO2 film is formed after complete consumption of Zr metal at 857 °C. A further rise in temperature changes a part of ZrSi2 to Zr-Silicate. The synchrotron radiation-based grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies also corroborate the above findings. Atomic force microscopy is also carried out on the samples. It is evident from the observations that an intermixing and nucleation of Zr and Si occur at lower temperature prior to the formation of the interfacial silicate layer. Zr-Silicate formation takes place only at a higher temperature. (paper)

  15. Two-dimensional electronic structure of dysprosium silicide nanowires on Si(557)

    International Nuclear Information System (INIS)

    Rare earth silicide nanostructures are of high interest because of their extremely low Schottky barriers on n-Si(111) and the formation of nanowires with one-dimensional metallicity on Si(001). In this work, the self-organized growth of monolayer-thick dysprosium silicide nanowires on Si(557) has been studied by scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy. The bare Si(557) surface is characterized by (111) and (112) facets. Accordingly, we observed the nanowires forming on the (111) facets. For coverages of 2A dysprosium, nanowire lengths exceeding 1μm and widths around 5 nm were found. Their electronic structure shows a strong dispersion both parallel and perpendicular to the nanowires, which is assigned to the band structure of DySi2 monolayers on Si(111). At higher coverages similar nanowires are observed at the (111) facets, which show characteristic structural properties of the multilayer growth and also the Dy3Si5 multilayer band structure

  16. Wettability of boron carbide

    International Nuclear Information System (INIS)

    The wettability of boron carbide has been examined by means of the sessile drop method, using the following candidate alloys: (96wt%AG-4wt%Ti), (Ag-26.5wt%Cu-3wt%Ti), (Sn-10wt%Ag-4wt%Ti), Sn(99.95wt%) and Al(99.99wt%). The results show that B4C is completely wetted by the Ag-based alloys. Sn-10wt%Ag-4wt%Ti alloy and pure Al partly wet the B4C surface, while pure Sn does not wet B4C at all. For all the alloys used, except pure Sn, a reaction layer was observed at the interface between the ceramic part and the metal drop. Although the spreading kinetics of the Al-drop was much slower compared with the Ti-containing alloys, the reaction rate was considerably higher in the former case. This suggests that aluminium is an attractive candidate material for brazing of B4C. Formation of the low melting B2O3 at the B4C surface may cause oxidation of the filler metal during joining, which, in turn, leads to a low bond strength

  17. Thermal conductivity of boron carbide-boron nitride composites

    International Nuclear Information System (INIS)

    This paper reports that because of their preferred orientation, the addition of boron nitride dispersions to hot-pressed boron carbide was found to result in a considerable degree of anisotropy in thermal conductivity of the resulting composite, indicated by an increase in the thermal conductivity perpendicular to the hot-pressing direction by as much as a factor of 3 at the highest boron nitride volume fractions of this study, and a decrease in the thermal conductivity parallel to the hot-pressing direction by as much as a factor of 2. The composite data were found to be below the values expected from composite theory, which may represent indirect evidence for the existence of an interfacial thermal barrier

  18. Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

    International Nuclear Information System (INIS)

    Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and electron energy loss spectroscopy. The phase composition of the film was also studied by high-resolution transmission electron microscopy. The mechanism of silicide film growth on a-Si is considered. The origin of internal stress within the growing film and its role in the silicide film growth process are discussed. Due to high pressure occurring within the growing film, the first phase to form is the hexagonal silicide phase h-Mg2Si. According to the DRS data, the phase h-Mg2Si is semiconducting. The new peak in the differential reflectance spectrum is assigned to the h-Mg2Si. At later stages of Mg deposition the cubic silicide phase c-Mg2Si grows. - Highlights: • The film growth by UHV deposition of Mg on amorphous Si layer was studied. • Two Mg2Si phases, hexagonal and cubic, were formed on amorphous Silicon. • The metastable h-Mg2Si forms first, due to very high stress inside the film. • The stress is induced by chemical forces during intermixing of Mg with Si. • The film growth stages are clearly seen by Differential Reflectance Spectroscopy

  19. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  20. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  1. Boron carbide nanolumps on carbon nanotubes

    Science.gov (United States)

    Lao, J. Y.; Li, W. Z.; Wen, J. G.; Ren, Z. F.

    2002-01-01

    Boron carbide nanolumps are formed on the surface of multiwall carbon nanotubes by a solid-state reaction between boron and carbon nanotubes. The reaction is localized so that the integrity of the structure of carbon nanotubes is maintained. Inner layers of multiwall carbon nanotubes are also bonded to boron carbide nanolumps. These multiwall carbon nanotubes with boron carbide nanolumps are expected to be the ideal reinforcing fillers for high-performance composites because of the favorable morphology.

  2. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  3. Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

    International Nuclear Information System (INIS)

    Highlights: ► The presence of Al slows down the Ni2Si–NiSi phase transformation but significantly promotes the NiSi2−xAlx formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. ► The Ni0.91Al0.09/Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000 s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. -- Abstract: The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si–NiSi phase transformation but significantly promote the NiSi2−xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. Compared to the Ni0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1−xAlx alloy silicidation. This work demonstrated that thermally stable Ni1−xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices

  4. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  5. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe2B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  6. Shear amorphization of boron suboxide

    International Nuclear Information System (INIS)

    We report for the first time the shear-induced local amorphization of boron suboxide subjected to nanoindentation. The amorphous bands have a width of ∼1–3 nm and a length of 200–300 nm along the (01¯11) crystal plane. We show direct experimental evidence that the amorphous shear bands of boron suboxide are driven from the coalescence of dislocation loops under high shear stresses. These observations provide insights into the microscopic deformation and failure of high-strength and lightweight ceramics

  7. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  8. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  9. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    Energy Technology Data Exchange (ETDEWEB)

    Bruce S. Kang

    2005-10-10

    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  10. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B+, the threshold implantation dose which leads to BED lies between 3 x 1014 and of 1 x 1015/cm-2. Formation of the shallowest possible junctions by 0.5 keV B+ requires that the implant dose be kept lower than this threshold

  11. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  12. Modified fused silicide coatings for tantalum (Ta-10W) reentry heat shields

    Science.gov (United States)

    Packer, C. M.; Perkins, R. A.

    1973-01-01

    Results are presented of a program of research to develop a reliable, high performance, fused slurry silicide coating for the Ta-10W alloy. The effort was directed toward developing new and improved formulations for use at 2600 to 2800 F (1700 to 1811 K) in an atmospheric reentry thermal protection system with a 100-mission capability. Based on a thorough characterization of isothermal and cyclic oxidation behavior, bend transition temperatures, room- and elevated-temperature tensile properties, and creep behavior, a 2.5 Mn-33Ti-64.5Si coating (designated MTS) provides excellent protection for the Ta-10W alloy in simulated reentry environments. An extensive analysis of the oxidation behavior and characteristics of the MTS coating in terms of fundamental mechanisms also is presented.

  13. Formation of pinhole-free epitaxial yttrium silicide on silicon (111)

    International Nuclear Information System (INIS)

    This paper reports the growth of structurally continuous, pinhole-free epitaxial YSi2-x films on Si(111) substrates as thin as 30 Angstrom. This is accomplished by depositing both yttrium and silicon in the appropriate stoichiometric ratio onto substrates held near room temperature, which is apparently below the activation energy for the nucleation of a reaction between a deposited Y film and a Si substrate. Diffusion of Si atoms from an evaporation source into a thin Y layer occurs below this barrier energy, allowing the layer by layer formation of YSi2-x without the removal of silicon from the substrate, maintaining a relatively low interface free energy between the growing silicide film and the Si(111) substrate. Samples have been annealed to 500-900 degrees C to improve epitaxy without the creation of pinholes. Use of the template method allows for the growth of thicker films also free of pinholes

  14. The fabrication of metal silicide nanodot arrays using localized ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jin; Kim, Tae-Gon; Min, Byung-Kwon; Lee, Sang Jo, E-mail: bkmin@yonsei.ac.kr [School of Mechanical Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2010-12-03

    We propose a process for fabricating nanodot arrays with a pitch size of less than 25 nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).

  15. Rare-earth silicide thin films on the Si(111) surface

    Science.gov (United States)

    Sanna, S.; Dues, C.; Schmidt, W. G.; Timmer, F.; Wollschläger, J.; Franz, M.; Appelfeller, S.; Dähne, M.

    2016-05-01

    Rare-earth induced layered structures on the Si(111) surface are investigated by a combined approach consisting of ab initio thermodynamics, electron and x-ray diffraction experiments, angle-resolved photoelectron spectroscopy, and scanning tunneling microscopy. Our density functional theory calculations predict the occurrence of structures with different periodicity, depending on the rare-earth availability. Microscopic structural models are assigned to the different silicide phases on the basis of stability criteria. The thermodynamically stable theoretical models are then employed to interpret the experimental results. The agreement between the simulated and measured scanning tunneling microscopy images validates the proposed structural models. The electronic properties of the surfaces are discussed on the basis of the calculated electronic band structure and photoelectron spectroscopy data.

  16. Fabrication of uranium silicide dispersion fuel by atomization for research reactor

    International Nuclear Information System (INIS)

    Atomizing technology has been developed to eliminate the difficulties in comminution of the tough U3Si and to take advantage of the spherical shape and the rapid solidification. The comparison between the conventional dispersion fuel with comminuted powder and the newly developed fuel with atomized powder has been made. As a result, the processes, powdering uranium silicide and heat treatment to U3Si, become simplified. The extruding pressure of blended powder with atomized powder was lower than that of blended powder with comminuted powder. The elongation of the atomization processed fuel meat was much higher than that of comminution processed fuel meats. It appears that the loading density of U3Si in fuel meat can be increased by using atomized U3Si powder. The thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be much improved due to the spherical shape of atomized powder. (author)

  17. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-07-14

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  18. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-08-11

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  19. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  20. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  1. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  2. Boron sorption characteristics in resins

    International Nuclear Information System (INIS)

    The purpose of boron addition in a nuclear power plant is to control the reactivity. In PHWRs, it is injected into the moderator system in the form of boric anhydride solution, while in PHWRs, it is added to the primary heat transport system in the form of boric acid solution. The required boron levels in PHWRs are controlled by valving in strong base anion exchangers having exchangeable species in OD- form while in PHWRs, the same can be achieved by restoring to the use of Boron Thermal Regeneration System (BTRS). This system operates on the principle of existence of different amounts of various polyborate ions at different temperatures, solution pH's and the boric acid concentrations and on the reversible sorption of these polyions on strong base anion exchange resins. This report describes the salient features of boron sorption characteristics on four types of anion exchange resins, based on experimental data generated in the chemical laboratories of Reactor Engineering Division of the Bhabha Atomic Research Centre, Bombay. The report further makes an attempt to calculate the pH of the resin and solution phases and the percentages of different polyborates and undissociated boric acid, under the experimental conditions investigated. (author). 30 refs., 4 figs., 20 tables

  3. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution. PMID:22945740

  4. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  5. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle

    Science.gov (United States)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu

    2011-01-01

    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  6. In Situ Study of the Formation of Silicide Phases in Amorphous Co–Si Mixed Layers

    Energy Technology Data Exchange (ETDEWEB)

    Van Bockstael, C.; De Keyser, K; Demeulemeester, J; Vantomme, A; Van Meirhaeghe, R; Detavernier, C; Jordan-Sweet, J; Lavoie, C

    2010-01-01

    We investigate Co silicide phase formation when extra Si is added within an as deposited 50 nm Co film. The addition of Si is investigated for both the Co/SiO{sub 2} and Co/Si(1 0 0) system. A series of 10 Co-Si mixed films with a Si content varying from 21 to 59 at.% was prepared and investigated during annealing with in situ X-ray diffraction. The oxide system is used as reference system to identify phases that initially crystallize in an amorphous mixture of a given composition. Multiple phases can nucleate, and the temperature of crystallization depends on the Co-Si atomic ratio. Upon heating of the Co(Si)/Si system, the first reaction is a similar crystallization reaction of the Co(Si) mixture. Once the first phase is formed, one has the normal system of a silicide phase in contact with an unlimited amount of Si from the substrate, and the sequential phase formation towards CoSi{sub 2} is established. For deposited layers of composition ranging from 48%Si to 52%Si, the CoSi is the first phase to form and increasing the amount of Si leads to a remarkable improvement of the thermal stability of CoSi on Si(1 0 0). CoSi{sub 2} nucleation was extensively delayed by 150 C compared to the reaction observed from a pure Co film on Si(1 0 0). Electron backscatter diffraction measurements reveal that in this range, the gradual Si increase systematically leads to bigger CoSi grains (up to 20 {micro}m). This shows that the grain size of the CoSi precursor strongly affects the nucleation of the following CoSi{sub 2} phase. Laser-light scattering measurements suggest that adding more than 42%Si reduces the roughness of the CoSi{sub 2} layer.

  7. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  8. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  9. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  10. Synthesis of boron nitride nanotubes by boron ink annealing.

    Science.gov (United States)

    Li, Lu Hua; Chen, Ying; Glushenkov, Alexey M

    2010-03-12

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs. PMID:20154372

  11. Synthesis of boron nitride nanotubes by boron ink annealing

    International Nuclear Information System (INIS)

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs.

  12. Effect of P+ ions on the microstructure and the nature of the formed silicides in the Cr/Si system

    International Nuclear Information System (INIS)

    The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P+ doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 deg. C for different times, shows that the presence of phosphorus leads to the formation of CrSi2 disilicide, free of defects, and Cr3Si silicide for lower and higher annealing times, respectively. In the case of undoped substrate the formed CrSi2 disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed

  13. Oxidation-resistant Ge-doped silicide coating on Cr-Cr2Nb alloys by pack cementation

    International Nuclear Information System (INIS)

    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on Cr-Cr2Nb alloys in a single processing step. The morphology and composition of the coating depended both on the pack composition and processing schedule and also on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi2 and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. Under cyclic and isothermal oxidation conditions, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation and from pesting by the formation of a Ge-doped silica film. (orig.)

  14. Synthesis of vinyl boronates from aldehydes by a practical boron-Wittig reaction.

    Science.gov (United States)

    Coombs, John R; Zhang, Liang; Morken, James P

    2015-04-01

    A highly stereoselective boron-Wittig reaction between stable and readily accessible 1,1-bis(pinacolboronates) and aldehydes furnishes a variety of synthetically useful di- and trisubstituted vinyl boronate esters. PMID:25799147

  15. Production Cycle for Large Scale Fission Mo-99 Separation by the Processing of Irradiated LEU Uranium Silicide Fuel Element Targets

    OpenAIRE

    Abdel-Hadi Ali Sameh

    2013-01-01

    Uranium silicide fuels proved over decades their exceptional qualification for the operation of higher flux material testing reactors with LEU elements. The application of such fuels as target materials, particularly for the large scale fission Mo-99 producers, offers an efficient and economical solution for the related facilities. The realization of such aim demands the introduction of a suitable dissolution process for the applied U3Si2 compound. Excellent results are achieved by the oxidiz...

  16. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  17. Analysis of magnetron sputtered boron oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Buc, Dalibor [Slovak University of Technology in Bratislava (Slovakia); Bello, Igor [City University of Hong Kong, Kowloon, Hong Kong (China); Caplovicova, Maria [Comenius University in Bratislava (Slovakia); Mikula, Milan; Kovac, Jaroslav; Hotovy, Ivan [Slovak University of Technology in Bratislava (Slovakia); Chong, Yat Min [City University of Hong Kong, Kowloon, Hong Kong (China); Siu, Guei Gu [City University of Hong Kong, Kowloon, Hong Kong (China)], E-mail: apggsiu@cityu.edu.hk

    2007-10-15

    Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon-oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO{sub 2} phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B{sub 6}O, HBO{sub 2} crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.

  18. Microwave sintering of boron carbide composites

    International Nuclear Information System (INIS)

    Boron carbide is an important ceramic material because of its high hardness and low specific gravity. it is used for applications involving impact and wear resistance. The disadvantages of boron carbide materials are difficulty in fabrication and sensitivity to brittle fracture. These problems are significantly reduced by production of cermets based on boron carbide and aluminum or aluminum alloys. Microwave heating of boron carbide materials results in ultrarapid heating and high temperatures. Therefore, a finer microstructure is obtained. The objective of this work was to define a technology that would allow the manufacture of boron carbide ceramics having mechanical properties similar to those exhibited by hot-pressed specimens. microwave heating would be used for the densification step. Mixtures of boron carbide and aluminum were considered for this research because aluminum simultaneously acts as a sintering aid and introduces phases that contribute to toughness enhancement

  19. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  20. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.R.; Zheng, M.H.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)

    1995-08-01

    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  1. Dimensional stability of low enriched uranium silicide plate-type fuel for research reactors at transient conditions

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, Kazuaki; Fujishiro, Toshio; Horiki, Oichiro; Soyama, Kazuhiko; Ichikawa, Hiroki; Kodaira, Tsuneo (Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment)

    1992-03-01

    This paper describes the result of transient experiments using low enriched uranium silicide plate-type fuel for research reactors. The pulse irradiation was carried out at Nuclear Safety Research Reactor (NSRR) in Japan Atomic Energy Research Institute. The results obtained were: (1) At fuel plate temperature of below 400degC, a good dimensional stability of the tested fuel was kept. No fuel failure occurred. (2) At a plate temperature of about 540degC, a local crack was initiated on the Al-3% Mg alloy cladding. Once the cladding temperature exceeded the melting point of 640degC, the fuel plate was degraded much by increased bowing and cracking of the denuded fuel meat occurred after relocation of molten Al cladding. Despite of these degradation, neither fragmentation of the fuel plate nor mechanical energy generation occurred up to the cladding temperature of 971degC. (3) At the temperatures of around 925degC, the reaction of silicide particles with molten Al in the matrix and that of cladding occurred, forming Al riched U (Al, Si) compounds and Si riched (U, Si) compounds at the outermost surface of the silicide particles. (author).

  2. Dimensional stability of low enriched uranium silicide plate-type fuel for research reactors at transient conditions

    International Nuclear Information System (INIS)

    This paper describes the result of transient experiments using low enriched uranium silicide plate-type fuel for research reactors. The pulse irradiation was carried out at Nuclear Safety Research Reactor (NSRR) in Japan Atomic Energy Research Institute. The results obtained were: (1) At fuel plate temperature of below 400degC, a good dimensional stability of the tested fuel was kept. No fuel failure occurred. (2) At a plate temperature of about 540degC, a local crack was initiated on the Al-3% Mg alloy cladding. Once the cladding temperature exceeded the melting point of 640degC, the fuel plate was degraded much by increased bowing and cracking of the denuded fuel meat occurred after relocation of molten Al cladding. Despite of these degradation, neither fragmentation of the fuel plate nor mechanical energy generation occurred up to the cladding temperature of 971degC. (3) At the temperatures of around 925degC, the reaction of silicide particles with molten Al in the matrix and that of cladding occurred, forming Al riched U (Al, Si) compounds and Si riched (U, Si) compounds at the outermost surface of the silicide particles. (author)

  3. Nano-Borides and Silicide Dispersed Composite Coating on AISI 304 Stainless Steel by Laser-Assisted HVOF Spray Deposition

    Science.gov (United States)

    Sharma, Prashant; Majumdar, Jyotsna Dutta

    2014-10-01

    The study concerned a detailed microstructural investigation of nano-borides (Cr2B and Ni3B) and nano-silicide (Ni2Si) dispersed γ-nickel composite coating on AISI 304 stainless steel by HVOF spray deposition of the NiCrBSi precursor powder and subsequent laser surface melting. A continuous wave diode laser with an applied power of 3 kW and scan speed of 20 mm/s in argon shroud was employed. The characterization of the surface in terms of microstructure, microtexture, phases, and composition were carried out and compared with the as-coated (high-velocity oxy-fuel sprayed) surface. Laser surface melting led to homogenization and refinement of microstructures with the formation of few nano-silicides of nickel along with nano-borides of nickel and chromium (Ni3B, Cr2B, and Cr2B3). A detailed microtexture analysis showed the presence of no specific texture in the as-sprayed and laser-melted surface of Cr2B and Ni3B phases. The average microhardness was improved to 750-900 VHN as compared to 250 VHN of the as-received substrate. Laser surface melting improved the microhardness further to as high as 1400 VHN due to refinement of microstructure and the presence of silicides.

  4. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  5. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  6. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  7. Sintering behavior of boron carbide

    International Nuclear Information System (INIS)

    Pressureless sintering behavior of boron carbide (B4C) in argon was studied, with change in time and temperature, using carbon as sintering aid. Carbon was added via fenolic resin, acting also as a binder. After isostatic pressing the specimens were sintered in a graphite furnace at 19600C/1h, 21600C/15 minutes and 1h and 22000C/1h. The achieved density was 97% of the theoretical. Some mechanical properties and microstructural aspects have been evaluated. (author)

  8. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  9. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm2, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  10. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  11. Boron deposition from fused salts. Final report

    International Nuclear Information System (INIS)

    A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements

  12. Reactivity insertion transient analysis for KUR low-enriched uranium silicide fuel core

    International Nuclear Information System (INIS)

    Highlights: • A simulation model for KUR LEU silicide core was established. • Safety analyses for reactivity insertion transients were performed by EUREKA-2/RR. • Accidental control rod withdrawal transients were analyzed. • Cold water injection induced reactivity insertion transients were analyzed. • Reactivity insertion transients due to removal of irradiation samples were analyzed. - Abstract: The purpose of this study is to realize the full core conversion from the use of High Enriched Uranium (HEU) fuels to the use of Low Enriched Uranium (LEU) fuels in Kyoto University Research Reactor (KUR). Although the conversion of nuclear energy sources is required to keep the safety margins and reactor reliability based on KUR HEU core, the uranium density (3.2 gU/cm3) and enrichment (20%) of LEU fuel (U3Si2–AL) are quite different from the uranium density (0.58 gU/ (cm3)) and enrichment (93%) of HEU fuel (U–Al), which may result in the changes of heat transfer response and neutronic characteristic in the core. So it is necessary to objectively re-assess the feasibility of LEU silicide fuel core in KUR by using various numerical simulation codes. This paper established a detailed simulation model for the LEU silicide core and provided the safety analyses for the reactivity insertion transients in the core by using EUREKA-2/RR code. Although the EUREKA-2/RR code is a proven and trusted code, its validity was further confirmed by the comparison with the predictions from another two thermal hydraulic codes, COOLOD-N2 and THYDE-W at steady state operation. The steady state simulation also verified the feasibility of KUR to be operated at rated thermal power of 5 MW. In view of the core loading patterns, the operational conditions and characteristics of the reactor protection system in KUR, the accidental control rod withdrawal transients at natural circulation and forced circulation modes, the cold water injection induced reactivity insertion transient and the

  13. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States); Mei, Zhigang [Argonne National Lab. (ANL), Argonne, IL (United States); Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  14. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  15. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durmazucar, Hasan H.; Guenduez, Guengoer E-mail: ggunduz@metu.edu.tr

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  16. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    International Nuclear Information System (INIS)

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed

  17. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  18. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Boron carbide (B4C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B4C by carbothermic reduction of B2O3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B4C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author)

  19. The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

    Science.gov (United States)

    Chaia, N.; Mathieu, S.; Rouillard, F.; Vilasi, M.

    2015-02-01

    V-4Cr-4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi2 coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi2 coating has mechanical properties compatible with the V-4Cr-4Ti alloy for SFR applications.

  20. Molybdenum, Tungsten, and Aluminium Substitution for Enhancement of the Thermoelectric Performance of Higher Manganese Silicides

    Science.gov (United States)

    Nhi Truong, D. Y.; Berthebaud, David; Gascoin, Franck; Kleinke, Holger

    2015-10-01

    An easy and efficient process involving ball milling under soft conditions and spark plasma sintering was used to synthesize higher manganese silicide (HMS)-based compounds, for example MnSi1.75Ge0.02, with different molybdenum, tungsten, and aluminium substitution. The x-ray diffraction patterns of the samples after sintering showed the main phase to be HMS with the presence of some side products. Molybdenum substitution enlarges the unit cells more than tungsten substitution, owing to its greater solubility in the HMS structure, whereas substitution with aluminium did not substantially alter the cell parameters. The electrical resistivity of HMS-based compounds was reduced by <10% by this substitution, because of increased carrier concentrations. Changes of the Seebeck coefficient were insignificant after molybdenum and aluminium substitution whereas tungsten substitution slightly reduced the thermopower of the base material by approximately 8% over the whole temperature range; this was ascribed to reduced carrier mobility as a result of enhanced scattering. Substitution with any combination of two of these elements resulted in no crucial modification of the electrical properties of the base material. Large decreases of lattice thermal conductivity were observed, because of enhanced phonon scattering, with the highest reduction up to 25% for molybdenum substitution; this resulted in a 20% decrease of total thermal conductivity, which contributed to improvement of the figure of merit ZT of the HMS-based materials. The maximum ZT value was approximately 0.40 for the material with 2 at.% molybdenum substitution at the Mn sites.

  1. The Comparison Of Silicon Analysis For The Uranium Silicide Fuel Using Spectrophotometrical And Gravimetrical Methods

    International Nuclear Information System (INIS)

    The analysis of silicon content in the uranium silicide fuel spectro-photometrical and gravimetrical method have been performed. The nitrous oxide-acetylene was used in the atomic absorption spectrophotometry (AAS) on the wave length of 251.6 nm, and the mixture of ammonium hepta molybdate complexes and SnC12 as reductor were applied during analysis by UV-VIS spectrophotometry (UV-VIS) on the wave length of 757.5 mm. The reagent of HCLO4 and HNO3 were used for determining Si content by gravimetrical methods. The results of this comparison is as follows: the accuracy result is around 96.37 % + 0.24 % for the Si concentration up to 300 ppm (the AAS), is 138.60 % = 0.43 % for the Si concentration range between 0.1-1.5 ppm (UV-VIS), and is 51.13 % + 0.8 % for 1 gram of Si (gravimetry). The results also show that the lowest analytical error is obtained by AAS method

  2. Burnup determination of silicide MTR fuel elements (20% 235U) in the LFR laboratory

    International Nuclear Information System (INIS)

    The LFR facility is a radiochemical laboratory designed and constructed with a hot-cells line, a glove-box and a fume hood, all of them suited to work radioactive materials. At the beginning of the LFR operation a series of dissolutions of MTR irradiated silicide fuel elements was performed, and determined its isotopic composition of 235U, 239Pu and 148Nd (the last one as burn up monitor), by the thermal ionization mass spectrometry (TIMS). These assays are linked to the IAEA RLA/4/018 Regional Project 'Management of Spent Fuel from Research Reactors'. It is concluded that this technique of burn up measurement is powerful and accurate when properly applied, and permit to validate the calculation codes when isotopic dilution is performed. It is worth noticed the LFR capacity to carry on different research and development programs in the nuclear fuel cycle field, such as the previously mentioned absolute burn up measurements, or the evaluation of radioactive waste immobilization processes and researches on burnable poisons. (author)

  3. A Computational Study on the Ground and Excited States of Nickel Silicide.

    Science.gov (United States)

    Schoendorff, George; Morris, Alexis R; Hu, Emily D; Wilson, Angela K

    2015-09-17

    Nickel silicide has been studied with a range of computational methods to determine the nature of the Ni-Si bond. Additionally, the physical effects that need to be addressed within calculations to predict the equilibrium bond length and bond dissociation energy within experimental error have been determined. The ground state is predicted to be a (1)Σ(+) state with a bond order of 2.41 corresponding to a triple bond with weak π bonds. It is shown that calculation of the ground state equilibrium geometry requires a polarized basis set and treatment of dynamic correlation including up to triple excitations with CR-CCSD(T)L resulting in an equilibrium bond length of only 0.012 Å shorter than the experimental bond length. Previous calculations of the bond dissociation energy resulted in energies that were only 34.8% to 76.5% of the experimental bond dissociation energy. It is shown here that use of polarized basis sets, treatment of triple excitations, correlation of the valence and subvalence electrons, and a Λ coupled cluster approach is required to obtain a bond dissociation energy that deviates as little as 1% from experiment. PMID:26301835

  4. The whole-core LEU silicide fuel demonstration in the JMTR

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)] [and others

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  5. Status of core conversion with LEU silicide fuel in JRR-4

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  6. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    Science.gov (United States)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  7. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    International Nuclear Information System (INIS)

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI's commonly called 'vapor explosions') could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI's, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U3O8-Al, and U3Si2-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water

  8. Prompt Neutron Decay Constant Determination Of Silicide Transition Core Using Noise Method

    International Nuclear Information System (INIS)

    Chairman of BATAN had decided to replace the Oxide fuel element type of RSG-GAS into silicide element type step by step. The replacement will create core transitions. Kinetic characteristic of the transition cores have to be monitored in order to know the deviation of core behavior. For that reason, the kinetic parameters have to be measured. Prompt neutron decay constant (alpha) is one of the kinetic parameters that has to be monitored continuously in the transition cores. In order not to disturb the normal operation of reactor, alpha parameter should be measured by using noise analysis method. The voltage of neutron flux at power of 15 MW is connected to preamplifier and filter then to the Dynamic Signal Analyzer Version-2 and then the auto power spectral density (APSD) was determined by using Fast Fourier transform. From the APSD curve of each channel of JKT03, the cut off frequency of each channel can be determined by using linear regression technique such that the prompt neutron decay constant can be estimated

  9. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    Energy Technology Data Exchange (ETDEWEB)

    farahani, A.A.; Corradini, M.L. [Univ. of Wisconsi, Madison, WI (United States)

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  10. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    International Nuclear Information System (INIS)

    We report on the thermoelectric properties of the higher manganese silicide MnSi1.75 synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example, the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5 × 1020 cm−3 at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper

  11. Status of core conversion with LEU silicide fuel in JRR-4

    International Nuclear Information System (INIS)

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x1013(n/cm2/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities

  12. Crystal structure of the ternary silicide Gd2Re3Si5

    Directory of Open Access Journals (Sweden)

    Vitaliia Fedyna

    2014-12-01

    Full Text Available A single crystal of the title compound, the ternary silicide digadolinium trirhenium pentasilicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubooctahedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square antiprisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5 Å and isolated squares with an Re—Re distance of 2.9683 (6 Å.

  13. Oxidation behavior of niobium aluminide intermetallics protected by aluminide and silicide diffusion coatings

    International Nuclear Information System (INIS)

    The isothermal and cyclic oxidation behavior of a new class of damage-tolerant niobium aluminide (Nb3Al-xTi-yCr) intermetallics is studied between 650 C and 850 C. Protective diffusion coatings were deposited by pack cementation to achieve the siliciding or aluminizing of substrates with or without intervening Mo or Ni layers, respectively. The compositions and microstructures of the resulting coatings and oxidized surfaces were characterized. The isothermal and cyclic oxidation kinetics indicate that uncoated Nb-40Ti-15Al-based intermetallics may be used up to ∼750 C. Alloying with Cr improves the isothermal oxidation resistance between 650 C and 850 C. The most significant improvement in oxidation resistance is achieved by the aluminization of electroplated Ni interlayers. The results suggest that the high-temperature limit of niobium aluminide-based alloys may be increased to 800 C to 850 C by aluminide-based diffusion coatings on ductile Ni interlayers. Indentation fracture experiments also indicate that the ductile nickel interlayers are resistant to crack propagation in multilayered aluminide-based coatings

  14. Magnetic structure of the ferromagnetic new ternary silicide Nd5CoSi2.

    Science.gov (United States)

    Mayer, C; Gaudin, E; Gorsse, S; Porcher, F; André, G; Chevalier, B

    2012-04-01

    Nd(5)CoSi(2) was obtained from the elements by arc-melting followed by annealing at 883 K. Its investigation by single-crystal x-ray and neutron powder diffraction shows that this ternary silicide crystallizes as Nd(5)Si(3) in a tetragonal structure deriving from the Cr(5)B(3)-type (I4/mcm space group; a = 7.7472(2) and c = 13.5981(5) Å as unit cell parameters). The structural refinements confirm the mixed occupancy on the 8h site between Si and Co atoms, as already observed for Gd(5)CoSi(2). Magnetization and specific heat measurements reveal a ferromagnetic behavior below T(C) = 55 K for Nd(5)CoSi(2). This magnetic ordering is further evidenced by neutron powder diffraction investigation revealing between 1.8 K and T(C) a canted ferromagnetic structure in the direction of the c-axis described by a propagation vector k = (0 0 0). At 1.8 K, the two Nd(3+) ions carry ordered magnetic moments equal respectively to 1.67(7) and 2.37(7) μ(B) for Nd1 and Nd2; these two moments exhibit a canting angle of θ = 4.3(6)°. This magnetic structure presents some similarities with that reported for Nd(5)Si(3). PMID:22392874

  15. Characterization of novel heterophasic powdered silicide-type material for high-temperature protection systems

    International Nuclear Information System (INIS)

    Novel multicomponent heterophasic powdered material of silicide-type is presented. The powdered material is intended for forming high-temperature protective multifunction coatings able to protect different hot-loaded structural elements of aerospace industry from refractory metals alloys under severe oxidizing conditions in high-enthalpy and super/hypersonic oxygen-containing gas flows. The powdered material base on complexly composition of Si-Ti-Mo system modified with B,Y,W. Technological conception of its obtaining and powder making process are examined. The powders were worked out in accordance with early performed functional structural model of special materials for coatings with the increased self-healing ability. The coatings can be deposited from the specially prepared abovementioned powders by plasma spraying processes or any one of other coating methods ensuring the conservation of morphological peculiarities of microstructure and phase composition of powdered material (detonation spraying technique, from slurry ...). Finally the results of some properties of novel heterophasic silicidetype powders and some properties of protective coating deposited on the niobium base alloys by means of plasma spraying technique are presented. (author)

  16. Lanthanide silicide-carbide phases of composition La5Si3Csub(x)

    International Nuclear Information System (INIS)

    Alloys of lanthanide elements (La, Ce, Nd, Gd, Ho, Er and Y) with silicon have been prepared around the composition Ln5Si3. These have been investigated by single-crystal and powder x-ray diffraction, neutron diffraction, thermal analysis, micro hardness and hydrolytic techniques. For the light lanthanides (La, Ce), no Cr5B3-type phase was observed, but several new phases have been identified. The Nd-compound has a complicated behaviour and is a borderline element between the light and heavy lanthanides. Lanthanides heavier than Nd produce the 5:3 silicide, crystallizing in the Mn5Si3 (D88)-type structure. The solubility of carbon and its effect on the D88 structure have been investigated by x-ray, metallographic and hardness measurements. Also, the corrosion products arising from attack by H2O vapour and by HNO3 have been analysed. X-ray single-crystal analysis was achieved for two ordered superstructures, Er28Si16C4 and Er90Si54C18, despite serious problems from absorption and the presence of heavy atoms. A neutron powder profile analysis for these structures failed because of the screening effect and low resolution. The addition of carbon to the D88 structure in the range x = 0 to 2 in Ln5Si3Csub(x) produces quite complex phase changes which are reported and discussed. (author)

  17. Possible toxicity of boron on sugar cane

    Energy Technology Data Exchange (ETDEWEB)

    Bravo C., M.

    Analyses of necrotic and green leaf tissues from sugar cane grown in the Tambo Valley (Arequipa, Peru) have shown that the boron concentration in necrotic tissue (average 657.7 ppm) is several times higher than that in the green tissue (average 55.7 ppm). This suggests that the necrosis may be due to boron toxicity.

  18. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  19. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  20. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  1. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  2. Boron Carbides As Thermo-electric Materials

    Science.gov (United States)

    Wood, Charles

    1988-01-01

    Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

  3. Nuclear fuel management and boron carbide coating

    International Nuclear Information System (INIS)

    In recent years one way of introducing burnable absorber is to coat the fuel pellets by a thin layer of burnable absorber so called integral fuel burnable absorber (IFBA). In this method the fuel is coated with boron nitride or boron carbide. Boron has low absorption cross-section and when it exists on the surface of the fuel, it interacts with thermalized neutron. B4C is a boron compound, which can be used for coating the nuclear fuel. It has high thermal stability and withstands high pressure and temperatures. High technology product of boron carbide has different ratio of B: C. But in nuclear reactor when boron carbide is used, it must be rich with boron. In this research chemical vapor decomposition (CVD) has been using boron trichloride and carbon tetra chloride for reactant materials. The experiments were carried out at high temperatures (1050 degree Celsius, 1225 degree Celsius and 1325 degree Celsius). The coated samples were analyzed using X-Ray diffractometer (XRD), scanning electron microscopy (SEM) and will be presented in this paper. It was seen that decreasing the reaction temperature caused an increase on the quality and thickness of the coating

  4. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  5. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    10B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH)4-) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10B and 11B

  6. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping. PMID:25427850

  7. Stabilization of boron carbide via silicon doping

    Science.gov (United States)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  8. Burnup performances of boron nitride and boron coated nuclear fuels

    International Nuclear Information System (INIS)

    The nuclear fuels of urania (UOV) and 5% and 10% gadolinia (Gd2O3) containing UO2 previously produced by sol-gel technique were coated with first boron nitride (BN) then boron (B) thin layer by chemical vapor deposition (CVD) and also by plasma enhanced chemical vapor deposition (PECVD) techniques to increase the fuel cycle length and to improve the physical properties. From the cross-sectional view of BN and B layers taken from scanning electron microscope (SEM), the excellent adherence of BN onto fuel and B onto BN layer was observed in both cases. The behavior of fuel burnup, depletion of BN and B, the effect of coating thickness and also Gd2O3 content on the burnup performances of the fuels were identified by using the code WIMS-D/4 for Pressurized Water Reactor (PWR) and Boiling Water Reactor (BWR) cores. The optimum thickness ratio of B to BN was found as 4 and their thicknesses were chosen as 40 mm and 10 mm respectively in both reactor types to get extended cycle length. The assemblies consisting of fuels with 5% Gd2O3 and also coated with 10 mm BN and 40 mm B layers were determined as candidates for getting higher burnup in both types of reactors

  9. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  10. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  11. Experimental boron neutron capture therapy for melanoma: Systemic delivery of boron to melanotic and amelanotic melanoma

    International Nuclear Information System (INIS)

    The boron-containing melanin precursor analogue p-boronophenylalanine (BPA) has previously been shown to selectively deliver boron to pigmented murine melanomas when administered in a single intragastric dose. If boron neutron capture therapy is to become a clinically useful method of radiation therapy for human malignant melanoma, the boron carrier must be capable of delivering useful amounts of boron to remote tumor sites (metastases) and to poorly pigmented melanomas. The authors have now determined the ability of BPA to accumulate in several nonpigmented melanoma models including human melanoma xenografts in nude mice. The absolute amount of boron in the nonpigmented melanomas was about 50% of the observed in the pigmented counterparts but was still selectively concentrated in the tumor relative to normal tissues in amounts sufficient for effective neutron capture therapy. Single intragastric doses of BPA resulted in selective localization of boron in the amelanotic Greene melanoma carried in the anterior chamber of the rabbit eye and in a pigmented murine melanoma growing in the lungs. The ratio of the boron concentration in these tumors to the boron concentration in the immediately adjacent normal tissue was in the range of 3:1 to 4:1. These distribution studies support the proposal that boron neutron capture therapy may be useful as a regional therapy for malignant melanoma

  12. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  13. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  14. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  15. Proceedings of workshop on 'Boron Chemistry and Boron Neutron Capture Therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 3rd Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 12, in 1991. In this workshop, our attention was focused on the chemical nature of boron compounds and the boron neutron capture therapy (BNCT). First, clinical experiences of BNCT in KURRI in 1990 and 1991 were reported (Chap. 3). The feasibility of the gadolinium neutron capture therapy for brain tumors was discussed (Chap. 4). In the chemical field, a rapid spectrophotometric determination of trace amounts of borons in biological samples is described (Chap. 5). The chemical behaviours of p-boronophenylalanine and its analogs in aqueous solutions were investigated by a paper electrophoresis and infrared spectroscopy (Chap. 6). On the molecular design and synthesis of new boron carriers for BNCT, several new synthetic methods for B-10 containing nucleoside derivatives were shown (Chap. 7). (author)

  16. Quantitative boron detection by neutron transmission method

    International Nuclear Information System (INIS)

    //Quantitative boron detection is mainly performed by chemical methods like colorimetric titration. High neutron absorption cross section of natural boron makes attractive its detection by absorption measurements. This work is an extension of earlier investigations where neutron radiography technique was used for boron detection. In the present investigation, the neutron absorption rate of boron containing solutions is the way to measure quantitatively the boron content of the solutions. The investigation was carried out in Istanbul TRIGA Mark-II reactor. In the end of the experiments, it was observed that even |ppw| grade boron in aqueous solution can be easily detected. The use of this method is certainly very useful for boron utilizing industries like glass and steel industries.The major disadvantage of the method is the obligation to use always aqueous solutions to be able to detect homogeneously the boron content. Then, steel or glass samples have to be put first in an appropriate solution form. The irradiation of steel samples can give the distribution of boron by the help of a imaging and this suggested method will give its quantitative measurement. The superiority of this method are its quick response time and its accuracy. To test this accuracy, a supposed unknown , solution of boric acid is irradiated and then calculated by the help of the calibration curve. The measured value of boric acid was 0.89 mg and the calculated value was found to be 0.98 mg which gives an accuracy of 10 %. It was also seen that the method is more accurate for low concentration. (authors)

  17. Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • β-FeSi2 nano-particle was synthesized by reducing with Mg and by diluting with MgO. • XRD profile shows the iron di-silicide phase to be semiconducting β-FeSi2. • HRTEM and FESEM images indicate the β-FeSi2average particle size to be 60–70 nm. • Absorption, reflectance and PL spectroscopy show band gap to be direct 0.87 eV. • Nano-β-FeSi2is p-type with hole density of 4.38 × 1018 cm−3 and mobility 8.9 cm2/V s. - Abstract: Nano-particles of β-FeSi2 have been synthesized by chemical reduction of a glassy phase of [Fe2O3, 4SiO2] by Mg-metal where MgO is used as diluent to prevent the agglomeration of nano crystallites into micro-particles and also act as a negative catalyst for the formation of other phases. The sample is characterized by XRD, FESEM, HRTEM, EDX, ultra-violet-visible-infrared and PL spectroscopy and electronic properties have been investigated by Hall measurement. XRD profile shows that the synthesized powder consists of purely β-FeSi2 semiconducting phase. The average crystallite size of β-FeSi2 is determined to be around 65.4 nm from XRD peaks as well as from FESEM also. The optical absorption and PL spectroscopy shows that synthesized β-FeSi2 phase is a direct band gap semiconductor with a value of 0.87 eV. Hall measurements show that β-FeSi2 nano-particles is p-type with hole concentration of 4.38 × 1018 cm−3 and average hole mobility of 8.9 cm2/V s at 300 K

  18. Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

    International Nuclear Information System (INIS)

    Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR's uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ''hot segment'' analysis of narrow axial regions along the plate and ''hot streak'' analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about -7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square (χ2) test for goodness of fit to normal distributions was not satisfied

  19. Ab initio studies of structural, electronic, magnetic and mechanical properties of alkali earth metal silicides

    International Nuclear Information System (INIS)

    Alkali earth metal silicides MSi (M = Mg, Ca, Sr, Ba) are multi-phase compound and exist simultaneously in CrB, CsCl, NaCl or rock salt (RS) and zinc blende (zb) structures. In the CrB and CsCl phases, their behavior is metallic in the non-magnetic (NM) as well as the ferromagnetic (FM) structure. The total spin magnetic moment of these compounds in the zb phase is more than that in the corresponding RS phase; therefore, detailed studies for the zb phase are presented in this paper. This study includes structural, electronic and mechanical properties by using the full potential linear augmented plain wave scheme with local orbitals. Ferromagnetic CaSi, SrSi and BaSi show true half-metallic character. For a better understanding of the half-metallicity in the above-mentioned sp-type compounds, their band structures have been calculated and densities of state plots have been produced. The FM structures are more stable and harder than the corresponding NM structures. The magnetic moment corresponding to equilibrium lattice constants is calculated as 2 µB for FM CaSi, SrSi and BaSi, which are in accordance with the earlier work on the sp-type compounds CaC, SrC and BaC. The FM character changes to the paramagnetic character as the lattice parameter decreases. The general trend is that the values of the elastic constants C11, C12 and C44 increase with increasing hydrostatic pressure

  20. Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

    International Nuclear Information System (INIS)

    Highlights: • The already low κL of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring

  1. M(5)-silicon (M= titanium, niobium, molybdenum) based transition-metal silicides for high temperature applications

    Science.gov (United States)

    Tang, Zhihong

    2007-12-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600ºC. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2 and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500ºC. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500ºC by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L ↔ Nbss + NbB was determined to occur at 2104+/-5°C by DTA.

  2. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    The goal of this research was to determine the composition of boron deposits produced by pyrolysis of boron tribromide, and to use the results to (a) determine the experimental conditions (reaction temperature, etc.) necessary to produce alpha-rhombohedral boron and (b) guide the development/refinement of the pyrolysis experiments such that large, high purity crystals of alpha-rhombohedral boron can be produced with consistency. Developing a method for producing large, high purity alpha-rhombohedral boron crystals is of interest because such crystals could potentially be used to achieve an alpha-rhombohedral boron based neutron detector design (a solid-state detector) that could serve as an alternative to existing neutron detector technologies. The supply of neutron detectors in the United States has been hampered for a number of years due to the current shortage of helium-3 (a gas used in many existing neutron detector technologies); the development of alternative neutron detector technology such as an alpha-rhombohedral boron based detector would help provide a more sustainable supply of neutron detectors in this country. In addition, the prospect/concept of an alpha-rhombohedral boron based neutron detector is attractive because it offers the possibility of achieving a design that is smaller, longer life, less power consuming, and potentially more sensitive than existing neutron detectors. The main difficulty associated with creating an alpha-rhombohedral boron based neutron detector is that producing large, high purity crystals of alpha-rhombohedral boron is extremely challenging. Past researchers have successfully made alpha-rhombohedral boron via a number of methods, but no one has developed a method for consistently producing large, high purity crystals. Alpha-rhombohedral boron is difficult to make because it is only stable at temperatures below around 1100-1200 °C, its formation is very sensitive to impurities, and the conditions necessary for its

  3. Sintering of boron carbide (B4C)

    International Nuclear Information System (INIS)

    Boron carbide (B4C) is used as a control element in different types of reactors due to the high fast and thermal neutron absorption cross-section of B-10. Requirements of the Advanced Reactor Division of the Bariloche Atomic Center triggered the study of the possibilities of fabricating B4C pellets by cold-pressing and sintering. The results of essays of sinterability of two different commercial boron carbide powders, sintered at temperatures between 1200 and 2200 deg C, are given. Characterizations of the samples were made to determine the evolution of density, porosity, microstructure and boron content as a function of sintering temperature. (Author)

  4. Developments in boron magnetic resonance imaging (MRI)

    Energy Technology Data Exchange (ETDEWEB)

    Schweizer, M.

    1995-11-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain.

  5. First boronization in KSTAR: Experiences on carborane

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Suk-Ho, E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Kun-Su; Kim, Kwang-Pyo; Kim, Kyung-Min; Kim, Hong-Tack [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, Jong-Ho; Woo, Hyun-Jong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Park, Jae-Min [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Park, Eun-Kyong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Woong-Chae; Kim, Hak-Kun; Park, Kap-Rai; Yang, Hyung-Lyeol; Oh, Yeong-Kook; Na, Hoon-Kyun [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Lho, Taehyeop [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, Kyu-Sun [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    First boronization was performed in KSTAR tokamak during 2009 campaign in order to reduce oxygen impurities and to lower the power loss due to radiation. We report the results from the experiences on carborane during the first boronization in KSTAR. After the boronization, H{sub 2}O and O{sub 2} level in the vacuum vessel are reduced significantly. The characteristics of the deposited thin films were analyzed by variable angle spectroscopic ellipsometry, XPS, and AES. {approx}1.78 x 10{sup 16} cm{sup -2} s{sup -1} of carbon flux on the wall is estimated by using cavity technique.

  6. Synthesis of Boron Nanorods by Smelting Non-Toxic Boron Oxide in Liquid Lithium

    OpenAIRE

    Amartya Chakrabarti; Tao Xu; Laura K. Paulson; Krise, Kate J.; Maguire, John A; Hosmane, Narayan S.

    2010-01-01

    In contrast to the conventional bottom-up syntheses of boron nanostructures, a unique top-down and greener synthetic strategy is presented for boron nanorods involving nontoxic boron oxide powders ultrasonically smelted in liquid lithium under milder conditions. The product was thoroughly characterized by energy dispersive X-ray analysis, atomic emission spectroscopy, thermogravimetric analysis and, UV-Vis spectroscopy, including structural characterization by transmission electron microscop...

  7. Determination of boron isotope ratios in boron carbide by mass spectrometry

    International Nuclear Information System (INIS)

    This paper introduces the direct determination of boron isotope ratios in the boron carbide powder by thermal ionization mass spectrometry. The technique for sample loading, the procedure for heating and the eliminating of effects induced by oxygen are studied. The study indicates that the preparing process for the sample will be shorted, and the time for determination and the exposure dose of the laboratory assistant will be reduced for the reason of directly determination of boron carbide. (authors)

  8. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes

  9. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  10. Boron

    International Nuclear Information System (INIS)

    This paper reports that borate minerals and refined borates are used extensively for the manufacture of vitreous materials such as insulation and textile fiberglasses, borosilicate glass, and porcelain enamels and frits. In North America, these applications are estimated to account for over 54% of the borate consumption. Other substantial uses are in soaps and detergents, metallurgy, fire retardants, industrial biocides, agriculture, and various miscellaneous applications. Reported domestic borate consumption in 1990 was estimated by the U.S. Bureau of Mines to be 320 000 metric tons B2O3 versus 354 000 metric tons B2O3 in 1989. Consumption is projected to remain essentially static in 1991. Imports were estimated by the Bureau to be 50 000 metric tons B2O3 in 1990. Exports of boric acid and refined borates were approximately 650 000 metric tons of product, a 15 000 metric ton increase from the 1989 level. This increase partially offsets the drop in the 1990 consumption level

  11. Boron-isotope fractionation in plants

    International Nuclear Information System (INIS)

    Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, 11B and 10B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in 11B relative to the nutrient solution, and the leaves were enriched in 10B and the stem in 11B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

  12. Synthesis of Boron-Containing Primary Amines

    Directory of Open Access Journals (Sweden)

    Sheng-Hsuan Chung

    2013-10-01

    Full Text Available In this study, boron-containing primary amines were synthesized for use as building blocks in the study of peptoids. In the first step, Gabriel synthesis conditions were modified to enable the construction of seven different aminomethylphenyl boronate esters in good to excellent yields. These compounds were further utilized to build peptoid analogs via an Ugi four-component reaction (Ugi-4CR under microwave irradiation. The prepared Ugi-4CR boronate esters were then successfully converted to the corresponding boronic acids. Finally, the peptoid structures were successfully modified by cross-coupling to aryl/heteroaryl chlorides via a palladium-mediated Suzuki coupling reaction to yield the corresponding derivatives in moderate to good yields.

  13. Boron toxicity in oil palm (Elaeis guineensis)

    Energy Technology Data Exchange (ETDEWEB)

    Rajaratnam, J.A.

    1973-01-01

    Potted oil palms were treated with fertilizer of borate-46 at several concentrations and the plants were observed for boron toxicity effects. Toxicity symptoms were apparent at high rates but not at rates equivalent to typical Malaysian soils.

  14. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  15. Boron-Filled Hybrid Carbon Nanotubes.

    Science.gov (United States)

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  16. Boron neutron capture therapy. What is next?

    International Nuclear Information System (INIS)

    BNCT (Boron Neutron Capture Therapy) will have difficulties establishing itself without efficient and conclusive clinical trials of glioma, without the expansion to other tumors, and without efficient programs for compound development and testing. (author)

  17. Ni doping of semiconducting boron carbide

    International Nuclear Information System (INIS)

    The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

  18. Analysis of boron at Koeberg Power Station

    International Nuclear Information System (INIS)

    Soluble reactivity poisons, also called chemical shim, produce spatially uniform neutron absorption when dissolved in reactor coolant water. The boron-10 isotope having a high neutron absorption coefficient is used in commercial pressurised water reactors (PWR) to limit and control reactivity. This is achieved at Koeberg Nuclear Power Station (KNPS) and the majority of commercial PWR's worldwide by the addition of natural boric acid to the reactor coolant. The boric acid dissolved in the coolant decreases the thermal utilisation factor, causing a decrease in reactivity. By varying the concentration of boric acid (and hence also the B-10 concentration) in the coolant, a process referred to as boration and dilution, the reactivity of the core can be easily managed. An increase in boron concentration (boration) creates negative reactivity and if the boron concentration is reduced (dilution), positive reactivity is added. The changing of boron concentration in a PWR is used primarily to compensate for fuel burn-up or poison build-up. The variation in boron concentration allows control rod use to be minimised, which results in a flatter flux profile over the core than can be produced by control rod manipulation. Accurate laboratory and on-line chemical analysis of boron concentration is important because of its operational implications associated with reactivity control and also for nuclear safety. In a normal fuel cycle, as the nuclear fuel is being consumed, the reactor coolant boric acid (B-10) concentration must be reduced by dilution with purified water to maintain the reactor at constant power. Besides in the reactor coolant water, boric acid concentration is also important in the chemical and volume control system and reactor make-up system for operation. For nuclear safety, boric acid concentrations are technical specification parameters, maintained and monitored in the spent fuel system and safety injection systems. Boron concentration determination is

  19. High temperature thermoelectric properties of boron carbide

    International Nuclear Information System (INIS)

    Boron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (∼1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200 degrees C) and for preparing n-type materials is discussed

  20. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates

    International Nuclear Information System (INIS)

    Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio (∼15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst.

  1. Technical report: technical development on the silicide plate-type fuel experiment at nuclear safety research reactor

    International Nuclear Information System (INIS)

    According to a reduction of fuel enrichment from 45 w/o 235U to 20 w/o, an aluminide plate-type fuel used currently in the domestic research and material testing reactors will be replaced by a silicide plate-type one. One of the major concern arisen from this alternation is to understand the fuel behavior under simulated reactivity initiated accident (RIA) conditions, this is strongly necessary from the safety and licensing point of view. The in-core RIA experiments are, therefore, carried out at Nuclear Safety Research Reactor (NSRR) in Japan Atomic Energy Research Institute (JAERI). The silicide plate-type fuel consisted of the ternary alloy of U-Al-Si as a meat with uranium density up to 4.8 g/cm3 having thickness by 0.51 mm and the binary alloy of Al-3%Mg as a cladding by thickness of 0.38 mm. Comparison of the physical properties of this metallic plate fuel with the UO2-zircaloy fuel rod used conventionally in commercial light water reactors shows that the heat conductivity of the former is of the order of about 13 times greater than the latter, however the melting temperature is only one-half (1570degC). Prior to in-core RIA experiments, there were some difficulties lay in our technical path. This report summarized the technical achievements obtained through our four years work. (J.P.N.)

  2. Effects of nitrogen annealing on surface structure, silicide formation and magnetic properties of ultrathin films of Co on Si(100)

    Indian Academy of Sciences (India)

    Ganesh K Rajan; Shivaraman Ramaswamy; C Gopalakrishnan; D John Thiruvadigal

    2012-02-01

    Effects of nitrogen annealing on structural and magnetic properties of Co/Si (100) up to 700°C has been studied in this paper. Ultrathin Co films having a constant thickness of 50 Å were grown on Si (100) substrates using electron-beam evaporation under very high vacuum conditions at room temperature. Subsequently, the samples were annealed at temperatures ranging from 100–700°C in a nitrogen environment at atmospheric pressure. Sample quality and surface morphology were examined using atomic force microscopy. Silicide formation and the resultant variation in crystallographic arrangement were studied using X-ray diffractometer. The magnetization measurements done using a vibrating sample magnetometer indicate a decrease in coercivity and retentivity values with increase in annealing temperature. Resistivity of the samples measured using a four-point probe set up shows a decrease in resistivity with increase in annealing temperature. Formation of various silicide phases at different annealing temperatures and the resultant variation in the magnetic susceptibility has been thoroughly studied and quantified in this work.

  3. Surface effect on the electronic and the magnetic properties of rock-salt alkaline-earth metal silicides

    International Nuclear Information System (INIS)

    An all electron ab-initio method was employed to study the electronic and the magnetic properties of the (001) surface of alkaline-earth metal silicides, CaSi, SrSi, and BaSi, in the rock-salt structure. The three compounds retain their ferromagnetic metallic properties at the surface. Due to the surface effects, the magnetism of the topmost layer is changed as compared with the bulk. This is a short-range effect. In CaSi, the magnetism of the surface layer is noticeably reduced, as compared with the bulk: magnetic moments (MMs) on both Ca and Si atoms are reduced. In SrSi (001), the polarization of electrons in the surface atoms is similar to that in the bulk atoms, and the values of MMs on the component atoms in the topmost layer do not change as much as in CaSi. In BaSi (001), the magnetic properties of Si surface atoms are enhanced slightly, and the magnetism of Ba atoms is not affected considerably by the surface effect. The calculated densities of states confirm the short-range effect of the surface on the electronic properties of the metal silicides.

  4. Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface

    Institute of Scientific and Technical Information of China (English)

    DING Tao; SONG Jun-Qiang; LI Juan; CAI Qun

    2011-01-01

    Erbium silicide nanowires are self-assembled on vicinal Si(Ool) substrates after electron beam evaporation and post annealing at 63(fC In-situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged. Meanwhile, a structural transition from hexagonal AIB2 phase to tetragonal ThSi'2 phase is revealed with high-resolution transmission electron microscopy. It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires. Additionally, a multiple deposition-annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.%@@ Erbium silicide nanowires are self-assembled on vicinal Si(001) substrates after electron beam evaporation and post annealing at 630℃ In-situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged.Meanwhile, a structural transition from hexagonal AlB phase to tetragonal ThSi phase is revealed with high-resolution transmission electron microscopy.It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires.Additionally, a multiple deposition- annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.

  5. Lithium-Beryllium-Boron : Origin and Evolution

    OpenAIRE

    Vangioni-Flam, Elisabeth; Casse, Michel; Audouze, Jean

    1999-01-01

    The origin and evolution of Lithium-Beryllium-Boron is a crossing point between different astrophysical fields : optical and gamma spectroscopy, non thermal nucleosynthesis, Big Bang and stellar nucleosynthesis and finally galactic evolution. We describe the production and the evolution of Lithium-Beryllium-Boron from Big Bang up to now through the interaction of the Standard Galactic Cosmic Rays with the interstellar medium, supernova neutrino spallation and a low energy component related to...

  6. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  7. A neutron diffraction study of amorphous boron

    Science.gov (United States)

    Delaplane, R. G.; Lundström, T.; Dahlborg, U.; Howells, W. S.

    1991-07-01

    The structure of amorphous boron has been studied with pulsed neutron diffraction techniques using the ISIS facilities at the Rutherford Appleton Laboratory. The experimental static structure factor S(Q) and radial distribution function support a structural model based on units of B12 icosahedra resembling those found in crystalline β-rhombohedral boron, but with a certain degree of disorder occurring in the linking between these subunits.

  8. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 105 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  9. Amorphous boron nitride at high pressure

    Science.gov (United States)

    Durandurdu, Murat

    2016-06-01

    The pressure-induced phase transformation in hexagonal boron nitrite and amorphous boron nitrite is studied using ab initio molecular dynamics simulations. The hexagonal-to-wurtzite phase transformation is successfully reproduced in the simulation with a transformation mechanism similar to one suggested in experiment. Amorphous boron nitrite, on the other hand, gradually transforms to a high-density amorphous phase with the application of pressure. This phase transformation is irreversible because a densified amorphous state having both sp3 and sp2 bonds is recovered upon pressure release. The high-density amorphous state mainly consists of sp3 bonds and its local structure is quite similar to recently proposed intermediate boron nitrite phases, in particular tetragonal structure (P42/mnm), rather than the known the wurtzite or cubic boron nitrite due to the existence of four membered rings and edge sharing connectivity. On the basis of this finding we propose that amorphous boron nitrite might be best candidate as a starting structure to synthesize the intermediate phase(s) at high pressure and temperature (probably below 800 °C) conditions.

  10. Inheritance of Boron Efficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    SHI Lei; WANG Yun-Hua; NIAN Fu-Zhao; LU Jian-Wei; MENG Jin-Ling; XU Fang-Sen

    2009-01-01

    Field experiments were conducted to study the inheritance of boron efficiency in oilseed rape (Brassica napus L.) by evaluating the boron (B) efficiency coefficient (BEC,the ratio of the seed yield at below the critical boron level to that at the boron-sufficient level) with 657 F2:3 fines of a population derived from a cross between a B-efficient cultivar,Qingyou 10,and a B-inefficient cultivar,Bakow.Qingyou i0 had high BEC as well as high seed yield at low available soil B.On the contrary,Bakow produced low seed yield at low B status.Boron deficiency decreased the seed yield of the F2:3 lines to different extents and the distribution of BEC of the population showed a bimodal pattern.When the 657 F2:3 lines were grouped into B-efficient lines and B-inefficient lines according to their BEC,the ratio of B-efficient lines to B-inefficient lines fitted the expected ratio (3:1),indicating that one major gene controlled the B-efficiency trait.127 F2:3 lines selected from the population at random,with distribution of BEC similar to that of the overall population,were used to identify the target region for fine mapping of the boron efficiency gene.

  11. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  13. Boronization of Russian tokamaks from carborane precursors

    International Nuclear Information System (INIS)

    A new and cheap boronization technique using the nontoxic and nonexplosive solid substance carborane has been developed and successfully applied to the Russian tokamaks T-11M, T-3M, T-10 and TUMAN-3. The glow discharge in a mixture of He and carborane vapor produced the amorphous B/C coating with the B/C ratio varied from 2.0-3.7. The deposition rate was about 150 nm/h. The primary effect of boronization was a significant reduction of the impurity influx and the plasma impurity contamination, a sharp decrease of the plasma radiated power, and a decrease of the effective charge. Boronization strongly suppressed the impurity influx caused by additional plasma heating. ECR- and ICR-heating as well as ECR current drive were more effective in boronized vessels. Boronization resulted in a significant extension of the Ne- and q-region of stable tokamak operation. The density limit rose strongly. In Ohmic H-mode energy confinement time increased significantly (by a factor of 2) after boronization. It rose linearly with plasma current Ip and was 10 times higher than Neo-Alcator time at maximum current. ((orig.))

  14. Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology

    Institute of Scientific and Technical Information of China (English)

    Jiang Yuxi; Li Jiao; Ran Feng; Cao Jialin; Yang Dianxiong

    2009-01-01

    r of the GGNMOS devices under high ESD current stress, and design area-efficient ESD protection circuits to sustain the required ESD level.Optimized layout rules for ESD protection in 0.13-μm silicide CMOS technology are also presented.

  15. Synthesis and properties of low-carbon boron carbides

    International Nuclear Information System (INIS)

    This paper reports on the production of boron carbides of low carbon content (3 and CCl4 at 1273-1673 K in a chemical vapor deposition (CVD) reactor. Transmission electron microscopy (TEM) revealed that phase separation had occurred, and tetragonal boron carbide was formed along with β-boron or α-boron carbide under carbon-depleted gas-phase conditions. At temperatures greater than 1390 degrees C, graphite substrates served as a carbon source, affecting the phases present. A microstructure typical of CVD-produced α-boron carbide was observed. Plan view TEM of tetragonal boron carbide revealed a blocklike structure

  16. Development of magnetic resonance technology for noninvasive boron quantification

    International Nuclear Information System (INIS)

    Boron magnetic resonance imaging (MRI) and spectroscopy (MRS) were developed in support of the noninvasive boron quantification task of the Idaho National Engineering Laboratory (INEL) Power Burst Facility/Boron Neutron Capture Therapy (PBF/BNCT) program. The hardware and software described in this report are modifications specific to a GE Signa trademark MRI system, release 3.X and are necessary for boron magnetic resonance operation. The technology developed in this task has been applied to obtaining animal pharmacokinetic data of boron compounds (drug time response) and the in-vivo localization of boron in animal tissue noninvasively. 9 refs., 21 figs

  17. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    Science.gov (United States)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  18. Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Sabyasachi [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302 (India); Gogurla, Narendar [Department of Physics, Indian Institute of Technology, Kharagpur 721302 (India); Banerji, Pallab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721302 (India); Guha, Prasanta K. [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302 (India); Pramanik, Panchanan, E-mail: pramanik1946@gmail.com [Department of Basic Science, MCKV Institute of Engineering, Howrah, Liluah 711204 (India)

    2015-10-15

    Graphical abstract: - Highlights: • β-FeSi{sub 2} nano-particle was synthesized by reducing with Mg and by diluting with MgO. • XRD profile shows the iron di-silicide phase to be semiconducting β-FeSi{sub 2}. • HRTEM and FESEM images indicate the β-FeSi{sub 2}average particle size to be 60–70 nm. • Absorption, reflectance and PL spectroscopy show band gap to be direct 0.87 eV. • Nano-β-FeSi{sub 2}is p-type with hole density of 4.38 × 10{sup 18} cm{sup −3} and mobility 8.9 cm{sup 2}/V s. - Abstract: Nano-particles of β-FeSi{sub 2} have been synthesized by chemical reduction of a glassy phase of [Fe{sub 2}O{sub 3}, 4SiO{sub 2}] by Mg-metal where MgO is used as diluent to prevent the agglomeration of nano crystallites into micro-particles and also act as a negative catalyst for the formation of other phases. The sample is characterized by XRD, FESEM, HRTEM, EDX, ultra-violet-visible-infrared and PL spectroscopy and electronic properties have been investigated by Hall measurement. XRD profile shows that the synthesized powder consists of purely β-FeSi{sub 2} semiconducting phase. The average crystallite size of β-FeSi{sub 2} is determined to be around 65.4 nm from XRD peaks as well as from FESEM also. The optical absorption and PL spectroscopy shows that synthesized β-FeSi{sub 2} phase is a direct band gap semiconductor with a value of 0.87 eV. Hall measurements show that β-FeSi{sub 2} nano-particles is p-type with hole concentration of 4.38 × 10{sup 18} cm{sup −3} and average hole mobility of 8.9 cm{sup 2}/V s at 300 K.

  19. A novel method of boron delivery using sodium iodide symporter for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron Neutron Capture Therapy (BNCT) effectiveness depends on the preferential sequestration of boron in cancer cells relative to normal tissue cells. We present a novel strategy for sequestering boron using an adenovirus expressing the sodium iodide symporter (NIS). Human glioma grown subcutaneously in athymic mice and orthotopic rat brain tumors were transfected with NIS using a direct tumor injection of adenovirus. Boron bound as sodium tetrafluoroborate (NaBF4) was administered systemically several days after transfection. Tumors were excised hours later and assessed for boron concentration using inductively coupled plasma atomic emission spectroscopy. In the human glioma transfected with NIS, boron concentration was more than 10 fold higher with 100 mg/kg of NaBF4, compared to tumor not transfected. In the orthotopic tumor model, the presence of NIS conferred almost 4 times the boron concentration in rat tumors transfected with human virus compared with contralateral normal brain not transfected. We conclude that adenovirus expressing NIS has the potential to be used as a novel boron delivery agent and should be explored for future clinical applications. (author)

  20. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    International Nuclear Information System (INIS)

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of 10B in tumour cells after injection of a boron compound (in our case B12H11SH, or BSH). With the Mephisto (microscope a emission de photoelectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy. (author)

  1. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  2. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-10-22

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

  3. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    International Nuclear Information System (INIS)

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively

  4. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  5. Boron-11 NMR spectroscopy of excised mouse tissues after infusion of boron compound used in neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy (BNCT) is based on selective boron uptake by the tumor and in situ activation by neutron beam. The authors propose the use of B-11 MR spectroscopy to noninvasively study boron uptake in animal tumor models. Sodium mercaptoundeca-hydrododecaborate was infused into female BALB/cJ mice and liver, brain, spleen, kidney, and tumor tissues were excised for MR (27.4MHz) and total boron content measurements. Boron-11 was easily detectable in tumor, liver, spleen, and skin. The results gave a very good correlation (correlation coefficient of .997) between B-11 MR measurements and total boron content of excised mouse tissues

  6. Simultaneous determination of boron-10 and boron-11 under proton bombardment

    International Nuclear Information System (INIS)

    The isotopic analysis of boron gained importance with increased use of boron-10 in nuclear technology. Former techniques for determining the stable boron isotope either were limited to the determination of a single isotope or required tedious experimental prodecure. The use of proton induced reactions was therefore investigated as an alternative method for the simultaneous analysis of both stable isotopes of boron through a relatively simple experimental procedure. Aqueous solutions of natural boric acid (19,78 at. % 10B) and enriched boric acid (92,41 at. % 10B) were mixed and evaporated to dryness in order to obtain samples in which the isotopic concentration of boron was known. Thin targets were produced by evaporating boron oxide, converted by heat from the boric acid mixture, onto tantalum backing material. Standard samples with known contents of boron oxide were prepared by dry mixing standard reference boron-containing glass powers in a ball mill. Thick targets containing boron of different isotopic compositions were prepared in matrices of potassium bromide and of ion-exchange resins by mixing the matrix with aqueous solutions of boric acid and of sodium carbonate by fusion with boric oxide. The most intense prompt gamma-rays emitted from boron isotopes under irradiation with protons up to 4,5 MeV were the 428-KeV 10B α(1,0), 718-KeV 10B p(1,0) and the 2124-KeV 11B p(1,0) gamma-rays. Excitation functions for the production of each of these were measured using both thick and thin targets

  7. Boron: out of the sky and onto the ground

    International Nuclear Information System (INIS)

    Now an accepted, engineered material for aerospace applications, boron is taking its place on the ground. Both current production applications, prototype (development) applications, and speculative applications abound. In the leisure product market, boron epoxy or boron aluminum has been used or tried in golf clubs (in combination with graphite epoxy or to reinforce aluminum or steel), in tennis racquets, in bicycles, racing shells, skis and skipoles, bows and arrows, and others. In the industrial area, boron has been used to reduce fatigue, increase stiffness, or for its abrasive properties. Textile machinery, honing tools, and cut off wheels or saws are among the applications. In the medical field, prosthetics and orthotic braces, wheel chairs, canes, and crutches are all good applications for boron. Applications for boron in transportation, construction, and heavy industry are also possible. The volume of boron used in these applications could have a major impact on prices, making boron composite parts cost competitive with conventional materials. (U.S.)

  8. 15th International Conference on Boron Chemistry (IMEBORON XV)

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil

    2015-01-01

    Roč. 87, č. 2 (2015), s. 121. ISSN 0033-4545 Institutional support: RVO:61388980 Keywords : boranes * boron * boron materials * carboranes * IMEBORON XV * medicinal chemistry Subject RIV: CA - Inorganic Chemistry

  9. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  10. First gaseous boronization during pulsed discharge cleaning

    Energy Technology Data Exchange (ETDEWEB)

    Ko, J., E-mail: jinseok@nfri.re.kr [Department of Physics, University of Wisconsin, Madison, WI (United States); Den Hartog, D.J.; Goetz, J.A.; Weix, P.J.; Limbach, S.T. [Department of Physics, University of Wisconsin, Madison, WI (United States)

    2013-01-15

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C{sub 2}B{sub 10}H{sub 12}) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  11. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite. The results show that both concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (Kd) between deposited brucite and final seawater are controll...

  12. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  13. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P2O5) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  14. Glass manufacturing process having boron and fluorine pollution abating features

    Energy Technology Data Exchange (ETDEWEB)

    Froberg, M.L.; Schroeder, C.F.

    1981-11-03

    Boron and/or fluorine values are reclaimed from a boron and/or fluorine laden gas stream emanating from a glass melter by means of a preheating bed of glass-forming batch agglomerates. The boron and/or fluorine values in such gases are first reacted with a boron and/or fluorine reactive material and the gases then conveyed into such a preheating bed to separate at least a portion of the reaction products.

  15. Glass manufacturing process having boron and fluorine pollution abating features

    International Nuclear Information System (INIS)

    Boron and/or fluorine values are reclaimed from a boron and/or fluorine laden gas stream emanating from a glass melter by means of a preheating bed of glass-forming batch agglomerates. The boron and/or fluorine values in such gases are first reacted with a boron and/or fluorine reactive material and the gases then conveyed into such a preheating bed to separate at least a portion of the reaction products

  16. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 4th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 24 in 1992. First, clinical experiences of BNCT in the Kyoto University Research Reactor in 1992 were briefly reported. Then, the killing effects of boron cluster-containing nucleic acid precursors on tumor cells were shown (Chap. 2). The various trials of the optical resolution of B-p-boronophenylalanine for neutron capture therapy were made (Chap. 3). The borate-dextran gel complexes were investigated by the nuclear magnetic resonance spectroscopy. The stability constants of borate complexes were listed, and are useful in the solution chemistry of boron compounds (Chap. 4). The interactions between boron compounds and biological materials were studied by the paper electrophoresis which had been developed by us (Chap. 5). Molecular design of boron-10 carriers and their organic synthesis were reported (Chap. 6). Carborane-containing aziridine boron carriers which were directed to the DNA alkylation were synthesized and their cancer cell killing efficacies were tested (Chap. 7). The solution chemistry of deuterium oxide which is a good neutron moderator was reported, relating to the BNCT (Chap. 8). (author)

  17. Synthesis of multiwall boron nitride nanotubes dependent on crystallographic structure of boron

    International Nuclear Information System (INIS)

    Synthesis and growth of multiwall boron nitride nanotubes (BNNTs) under the B and ZrO2 seed system in the milling–annealing process were investigated. BNNTs were synthesized by annealing a mechanically activated boron powder under nitrogen environment. We explored the aspects of the mechanical activation energy transferred to milled crystalline boron powder producing structural disorder and borothermal reaction of the ZrO2 seed particles on the synthesis of BNNTs during annealing. Under these circumstances, the chemical reaction of amorphous boron coated on the seed nanoparticles with nitrogen synthesizing amorphous BN could be enhanced. It was found that amorphous BN was crystallized to the layer structure and then grown to multiwall BNNTs during annealing. Especially, bamboo-type multiwall BNNTs were mostly produced and grown to the tail-side of the nanotube not to the round head-side. Open gaps with ∼0.3 nm of the bamboo side walls of BNNTs were also observed. Based on these understandings, it might be possible to produce bamboo-type multiwall BNNTs by optimization of the structure and shape of boron coat on the seed nanoparticles. -- Highlights: ► Structure of B is a key factor for BNNT synthesis for milling–annealing method. ► Amorphous boron is coated on the seed during milling of crystalline boron. ► Amorphous BN nanoclusters are crystallized during annealing. ► Growing of bamboo BNNTs is not to the round head-side but to the tail-side.

  18. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2016-02-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  19. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    Directory of Open Access Journals (Sweden)

    Yuya Egawa

    2014-02-01

    Full Text Available In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conjugated azobenzenes have been synthesized. There are several types of boronic acid azobenzenes, and their characteristics tend to rely on the substitute position of the boronic acid moiety. For example, o-substitution of boronic acid to the azo group gives the advantage of a significant color change upon sugar addition. Nitrogen-15 Nuclear Magnetic Resonance (NMR studies clearly show a signaling mechanism based on the formation and cleavage of the B–N dative bond between boronic acid and azo moieties in the dye. Some boronic acid-substituted azobenzenes were attached to a polymer or utilized for supramolecular chemistry to produce glucose-selective binding, in which two boronic acid moieties cooperatively bind one glucose molecule. In addition, boronic acid-substituted azobenzenes have been applied not only for glucose monitoring, but also for the sensing of glycated hemoglobin and dopamine.

  20. Boron-containing amino carboxylic acid compounds and uses thereof

    International Nuclear Information System (INIS)

    Novel compounds which are useful for boron neutron capture therapy (BNCT) are disclosed. The compounds comprise a stable boron-containing group and an aminocycloalkane carboxylic acid group or a boronated acyclic hydrocarbon-linked amino carboxylic acid. Methods for synthesis of the compounds and for use of the compounds in BNCT are disclosed

  1. Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing

    International Nuclear Information System (INIS)

    In this work, the solid-state reaction between a thin film of chromium and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction and the sheet resistance measurements. The thickness of 100 nm chromium layer has been deposited by electronic bombardment on Si (100) substrates, part of them had previously been implanted with arsenic ions of 1015 at/cm2 doses and an energy of 100 keV. The samples were heat treated under rapid thermal annealing at 500 oC for time intervals ranging from 15 to 60 s. The rapid thermal annealing leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi2, but no other phase can be detected. For samples implanted with arsenic, the saturation value of the sheet resistance is approximately 1.5 times higher than for the non-implanted case.

  2. Theoretical investigation of superconductivity in ternary silicide NaAlSi with layered diamond-like structure

    Science.gov (United States)

    Tütüncü, H. M.; Karaca, Ertuǧrul; Srivastava, G. P.

    2016-04-01

    We have investigated the electronic structure, phonon modes and electron-phonon coupling to understand superconductivity in the ternary silicide NaAlSi with a layered diamond-like structure. Our electronic results, using the density functional theory within a generalized gradient approximation, indicate that the density of states at the Fermi level is mainly governed by Si p states. The largest contributions to the electron-phonon coupling parameter involve Si-related vibrations both in the x-y plane as well as along the z-axis in the x-z plane. Our results indicate that this material is an s-p electron superconductor with a medium level electron-phonon coupling parameter of 0.68. Using the Allen-Dynes modification of the McMillan formula we obtain the superconducting critical temperature of 6.98 K, in excellent agreement with experimentally determined value of 7 K.

  3. Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry

    International Nuclear Information System (INIS)

    The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals

  4. Enhanced Plasma Performance by ICRF Boronization

    Institute of Scientific and Technical Information of China (English)

    万宝年; 赵燕平; 李建刚; 宋梅; 吴振伟; 罗家融; 李成富; 王小明

    2002-01-01

    Boronization with carborane (C2B10H12) by ICRF has been applied routinely to the walls of HT-7 super-conducting tokamak for the reduction of impurity influx, especially carbon and oxygen. Significant suppression of metallic impurities and radiating power fraction are achieved. The improved confinement for both particle and energy is observed in full range of operation parameters. Energy balance analysis shows that electron heat diffusion coefficient is strongly reduced. Measurements by Langmuir probes at the edge plasma show that the poloidal velocity shear after boronization is changed to a profile favoring to good confinement. The main emphasis of this paper is to describe effects of boronization on aspects of the enhanced plasma performance.

  5. Anomalous electronic transport in boron carbides

    Science.gov (United States)

    Emin, D.; Samara, G. A.; Wood, C.

    The boron carbides are composed of icosahedral units, B12 and B11C1, linked together by strong intericosahedral bonds. With such distributions of icosahedral and intericosahedral compositions, boron carbides, B/sub 1-x/C/sub x/, are single phase over 0.1 less than or equal to x less than or equal to 0.2. The electronic transport properties of the boron carbides were examined within this single-phase region. Results are inconsistent with conventional analyses of both itinerant and hopping transport. Most striking are Seebeck coefficients which are both large and rapidly increasing functions of temperature despite thermally activated dc conductivities. These results manifest the hopping of small bipolaronic holes between carbon-containing icosahedral that are inequivalent in energy and electron-lattice coupling strength. Under hydrostatic pressures up to approx. 25 kbar, the dc conductivities increase with pressure. This anomalous behavior for hopping conduction reflects the distinctive structure and bonding of these materials.

  6. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT)

  7. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    Science.gov (United States)

    Singh, Bikramjeet; Singh, Paviter; Kumar, Manjeet; Thakur, Anup; Kumar, Akshay

    2015-05-01

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT).

  8. boron and boron nitride coated nuclear fuel production in plasma atmosphere

    International Nuclear Information System (INIS)

    In these study uranium dioxide (UO2) and 5, 10 % gadolinium oxide (Gd2O3) containing UO2 nuclear fuel pellets were coated with first boron nitride (BN) then boron (B) layers as the results of the reactions between boron trichloride (BCl3) with ammonia (NH3) and BCl3 with hydrogen (H2) in the medium of argon (Ar) plasma created at 650 W and 500 W and 27.12 MHz to increase the fuel burnup efficiency and reactor core life by the method of plasma enhanced chemical vapor deposition (PECVD). Grainy BN and B structures were observed on the photographs taken from scanning electron microscope (SEM)

  9. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  10. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  11. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  12. Can Two-Dimensional Boron Superconduct?

    Science.gov (United States)

    Penev, Evgeni S; Kutana, Alex; Yakobson, Boris I

    2016-04-13

    Two-dimensional boron is expected to exhibit various structural polymorphs, all being metallic. Additionally, its small atomic mass suggests strong electron-phonon coupling, which in turn can enable superconducting behavior. Here we perform first-principles analysis of electronic structure, phonon spectra, and electron-phonon coupling of selected 2D boron polymorphs and show that the most stable structures predicted to feasibly form on a metal substrate should also exhibit intrinsic phonon-mediated superconductivity, with estimated critical temperature in the range of Tc ≈ 10-20 K. PMID:27003635

  13. Thermal conductivity behavior of boron carbides

    Science.gov (United States)

    Wood, C.; Zoltan, A.; Emin, D.; Gray, P. E.

    1983-01-01

    Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

  14. Boron carbide-based ceramics via polymer route synthesis

    International Nuclear Information System (INIS)

    Boron carbide is a ceramic material with excellent high temperature physical properties. As compared to conventional techniques, the preparation of boron carbide from polymeric precursors is attractive as this technique offers a number of unique advantages. In this paper, the screening of polymeric precursors to boron carbide will be discussed. Two promising boron carbide, carborane containing polymeric precursors have resulted in 60-70 wt.% ceramic yields. The chemistry of polymer synthesis and the transformations from the polymer to amorphous and crystalline boron carbide were investigated with infrared spectroscopy, NMR spectroscopy, thermal analysis, and x-ray diffraction

  15. Determination of carbon and sulphur in boron carbide

    International Nuclear Information System (INIS)

    Boron carbide is used in control rods of nuclear power reactors. The chemical specification for carbon in boron carbide ranges between 15 - 24 wt.% depending upon the grade of boron carbide. Hence carbon in boron carbide is to be determined accurately to find out the stoichiometry. Sulphur, which is present in trace quantities, is also to be determined to find out the purity of boron carbide. Carbon is determined by combustion followed by (i) thermal conductivity detection and (ii) infrared detection. Sulphur is determined by (i) combustion followed by infrared detection and (ii) vacuum combustion extraction - quadrupole mass spectrometry. The results are compared. (author)

  16. Direct evidence of metallic bands in a monolayer boron sheet

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Liu, Ro-Ya; Iimori, Takushi; Lian, Chao; Li, Hui; Chen, Lan; Wu, Kehui; Meng, Sheng; Komori, Fumio; Matsuda, Iwao

    2016-07-01

    The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the β12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S ¯ point and a pair of hole pockets near the X ¯ point, which is supported by the first-principles calculations. The metallic boron allotrope in β12 sheet opens the way to novel physics and chemistry in material science.

  17. Medical chemistry of boron neutron capture agents having pharmacological activity

    International Nuclear Information System (INIS)

    Boron neutron capture therapy (BNCT) is a cancer treatment that selectively destroys cancer cells following administering a cancer-selective drug containing stable isotope boron-10 and neutron irradiation. In clinical trial of BNCT, disodium mercaptoundecahydro-closo-dodecaborate (BSH) and p-boronophenylalanine (BPA) have been used, however, development of a new drugs with high cancer selectivity and therapeutic efficiency is expected. Therefore, we review boron-containing drugs as a boron neutron capture agents having pharmacological activity, BNCT research on boron-modified porphyrin derivatives which have photosensitivity and neutron capture activity and our proposed neutron sensitizing agent. (author)

  18. Inefficiency of high boron concentrations for cell killing in boron neutron capture therapy

    International Nuclear Information System (INIS)

    This study is to investigate the relationship between the cell-killing effect of the 10B(n, α)7Li capture reaction, intracellular boron concentration, and thermal neutron fluence in boron neutron capture therapy using in vitro cell survival based on a clonogenic assay, and biophysical analysis. Our results showed that the cell-killing yield of the 10B(n, α)7Li capture reaction per unit thermal neutron fluence declined with an increase in the intracellular boron concentration above 45 μg/ml 10B. The cell-killing effect was well described using an empirical power function of the intracellular boron concentration, with exponent 0.443. Knowledge of this effect will help in the optimization of BNCT. (author)

  19. Effect of metal hydrides on the burning characteristics of boron

    International Nuclear Information System (INIS)

    Highlights: • The effect of some metal hydrides on the burning characteristics of boron is studied for the first time. • We are the first to conduct a TG experiment on boron samples at high temperatures (a maximum of 1750 °C). • The thermal reaction process of boron is firstly divided into five stages according to the weight gain rate of the sample. • Specific values of metal hydrides on ignition delay time and combustion intensity of boron are obtained. - Abstract: In this study, the effect of four metal hydrides on the burning characteristics of boron was investigated. Thermogravimetric experiment results show that the thermal reaction process of boron samples can be divided into five stages. The thermal reactions of boron can be significantly promoted with LiH, which can reduce the initial temperature of the first violent reaction stage by ∼140 °C. The starting temperature of the post-reaction stage also decreases by ∼260 °C. The results of the laser ignition experiment suggest that all four metal hydrides can promote boron burning. Nonetheless, different metal hydrides display varied promotional effects. Among the studied hydrides, LiH is the most effective additive and shortens the ignition delay time of boron by ∼34.1%. Moreover, it enhances the combustion intensity of boron by ∼117.6%. The other three metal hydrides (CaH2, TiH2, and ZrH2) can also contribute to boron burning

  20. Removal properties of dissolved boron by glucomannan gel.

    Science.gov (United States)

    Oishi, Kyoko; Maehata, Yugo

    2013-04-01

    Boron ions have long been known to form complexes with the cis-diol group of a polysaccharide. Konjac glucomannan (KGM) which is one of polysaccharides was used to remove dissolved boron in this study. KGM forms a complex with boron, but does not remove boron from contaminated waters as well as other polysaccharides because of its high water solubility. Therefore, the removal efficiencies of dissolved boron were examined using both an insoluble KGM gel and KGM semi-gel. The former did not remove dissolved boron, but the latter did. The difference in the ability of boron removal was due to the presence of diol group inside. KGM loses free diol group during the process of gelation. On the other hand, the semi-gel gelated only surface layer in water has diol group inside. The boron removal capacity of the semi-gel was highest at pHs⩾11, when the boron species is present as B(OH)4(-). The capacity was slightly increased by the addition of Al, Ca and Mg under high pH conditions. This was due to co-precipitation of boron with Ca dissolved from the semi-gel. The boron adsorbed to the semi-gel easily was desorbed under low pH conditions and the hysteresis was not found. PMID:23260255

  1. Relationship Between Soil Boron Adsorption Kinetics and Rape Plant Boron Response

    Institute of Scientific and Technical Information of China (English)

    ZHUDUANWEI; PIMEIMEI; 等

    1997-01-01

    The boron adsorption kinetic experiment in soil by means a flow displacement technique showed that the kinetic data could be described with some mathematic equations.The average values of the coorealtion coefficeint for zero-order,first-order,parabolic diffusion ,Elovich,power function and eponential equations were 0.957,0.982,0.981,0.984,0.981 and 0.902 ,respectively,The correlation between adsorbed boron or its other expression form and time were the highest for first-order ,parabloic diffusion Elovich,and pwer function equations,the second for the zeroorder equation,and the tlowest for the exponential equation.The parabloic diffusion equation fitted well the expermiental results,with the least standard error among the six kinetic equation,showing that the monvemetn of boron from soil solution to soil colloid surface may be controlled by boron diffusion speed.The boron content of rape seedling obtained from soil cultvation was correlated with the rate constants of the kinetic equations.The constants of first-order ,parabloic diffusion,and exponential equaitions were significanlty correlated with the boron content of the crop of NPK treatment at a 95% probaility level ,with correation coeffecients being 0.686,0.691 and 0.64 and 0.641,respectively.In the case of zero-order equation,it Was significant at 99% probability level(r=0.736),These results showed that the adsorption kinetic constants of soil boron were closely related with the rape plant response to boron.

  2. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  3. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na210B12H11SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author)

  4. Effects of boron number per unit volume on the shielding properties of composites made with boron ores form China

    International Nuclear Information System (INIS)

    The total macroscopic removal cross sections, deposited energies and the absorbed doses of three new shielding composites loaded with specific boron-rich slag, boron concentrate ore and boron mud of China for 252Cf neutron source were investigated by experimental and Monte Carlo calculation. The results were evaluated by boron mole numbers per unit volume in composites. The half value layers of the composites were calculated and compared with that of Portland concrete, indicating that ascending boron mole numbers per unit volume in the composites can enhance the shielding properties of the composites for 252Cf neutron source. (authors)

  5. Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μl) microbial fuel cell

    KAUST Repository

    Mink, Justine E.

    2012-02-08

    Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m 2 of current density and 392 mW/m 3 of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society.

  6. Mechanical properties of C40-based ternary Mo(Si,Al)2 and quaternary (Mo,Zr)(Si,Al)2 silicides

    International Nuclear Information System (INIS)

    Refractory silicides with transition metals are of interest as structural materials operating at very high temperatures to improve energy efficiency. MoSi2 is particularly attractive because of its high melting point (2,030 C), relatively low density (6.24 g/cm3), superior oxidation resistance and high thermal conductivity. Nevertheless, MoSi2 still has several problems which must be overcome before structural application. In this paper an attempt to improve the ductility, toughness and high-temperature strength of C40-based MoSi2 silicides was made by controlling additional Al and Zr contents in order to change the ductility, species of the constituent phase and the volume fraction of each phase

  7. Program description for the qualification of CNEA - Argentina as a supplier of LEU silicide fuel and post-irradiation examinations plan for the first prototype irradiated in Argentina

    International Nuclear Information System (INIS)

    In this report we present a description of the ongoing and future stages of the program for the qualification of CNEA, Argentina, as a supplier of low enriched uranium silicide fuel elements for research reactor. Particularly we will focus on the characteristics of the future irradiation experiment on a new detachable prototype, the post-irradiation examinations (PIE) plan for the already irradiated prototype PO4 and an overview of the recently implemented PIE facilities and equipment. The program is divided in several steps, some of which have been already completed. It concludes: development of the uranium silicide fissile material, irradiation and PIE of several full-scale prototypes. Important investments have been already carried out in the facilities for the FE production and PIE. (author)

  8. Synthesis and evaluation of boron folates for Boron-Neutron-Capture-Therapy (BNCT)

    Energy Technology Data Exchange (ETDEWEB)

    Kettenbach, Kathrin; Schieferstein, Hanno; Grunewald, Catrin; Hampel, Gabriele; Schuetz, Christian L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Iffland, Dorothee; Bings, Nicolas H. [Mainz Univ. (Germany). Inst. of Inorganic Chemistry and Analytical Chemistry; Reffert, Laura M. [Hannover Medical School (Germany). Radiopharmaceutical Chemistry; Ross, Tobias L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Hannover Medical School (Germany). Radiopharmaceutical Chemistry

    2015-07-01

    Boron neutron capture therapy (BNCT) employs {sup 10}B-pharmaceuticals administered for the treatment of malignancies, and subsequently irradiated with thermal neutrons. So far, clinical established pharmaceuticals like boron phenylalanine (BPA) or sodium boron mercaptate (BSH) use imperfect (BPA) or passive (BSH) targeting for accumulation at target sites. Due to the need of a selective transportation of boron drugs into cancer cells and sparing healthy tissues, we combined the BNCT approach with the specific and effective folate receptor (FR) targeting concept. The FR is overexpressed on many human carcinomas and provides a selective and specific target for molecular imaging as well as for tumor therapy. We synthesized and characterized a carborane-folate as well as a BSH-folate to study their in vitro characteristics and their potential as new boron-carriers for BNCT. Uptake studies were carried out using human KB cells showing a significant increase of the boron content in cells and demonstrating the successful combination of active FR-targeting and BNCT.

  9. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst. PMID:18961131

  10. Coadsorption of lanthanum with boron and gadolinium with boron on Mo(1 1 0)

    Science.gov (United States)

    Magkoev, Tamerlan T.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-05-01

    Submonolayer to multilayer coadsorption of lanthanum (La) with boron (B) and gadolinium (Gd) with boron on the surface of Mo(1 1 0) has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and work function ( ϕ) measurements. The equilibrium state of double adsorbate systems achieved either by adsorption of rare-earth metal (REM) on boron precovered Mo(1 1 0) surface held at room temperature or after moderate annealing of the system with opposite order of adsorption (B on REM films) is the layer which is the inhomogeneous mixture of boron and REM atoms with preferential concentration of boron in the surface area of the mixed film. The work function of such films even at REM to boron concentration ratio much higher than 1/6 are very close to the values of corresponding bulk LaB 6 and GdB 6, favoring assumption of surface rearrangement as the dominant reason of high electron emission efficiency of hexaborides. Almost total similarity of the results for La-B and Gd-B systems can be viewed as the consequence of weak participation of Gd f-electrons in determining the thermionic properties of corresponding double layers.

  11. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    International Nuclear Information System (INIS)

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis

  12. PWR core response to boron dilution transient

    International Nuclear Information System (INIS)

    This paper illustrates the steps followed in order to set up a tool (composed of a plant model and of a procedure) that allows accounting for boron reactivity feedbacks during plant transients. The procedure that has been developed allows to find out the values of the boron feedback coefficients, given the differential boron worth, and to properly initialize the Thermal Hydraulic and the Neutronic (TH/NEU) system. Once the tool has been developed, it has been used to analyze different scenarios, resulting from deborated water injection from the reactor make-up system. The most important parameter, during this Reactivity Insertion Accidents (RIAs), is the Energy Released to the Fuel (ERF) and it has been monitored, in order to identify the situations when the fuel might be damaged (ERF > 250 kJ/kg, for high burnup fuel). The analyses have been performed using the RELAP5-3D computer code. The conclusion of the study is that the limited capability of modeling mixing phenomena provided by most common plant codes (such as RELAP5-3D) is not suitable to perform BE analyses of RIAs, since those accidents are so sensitive to boron concentration changes that the effect of uncertainties cannot be neglected. The use of Computational Fluid Dynamics (CFD) codes could reduce uncertainties enough to perform BE analyses and thus it should be recommended. (author)

  13. Pechmann Reaction Promoted by Boron Trifluoride Dihydrate

    Directory of Open Access Journals (Sweden)

    J. Mezger

    2005-08-01

    Full Text Available The Pechmann reaction of substituted phenols 1a-e with methyl acetoacetate (2 can be activated by boron trifluoride dihydrate (3 to give the corresponding 4-methyl- coumarin derivatives 4a-e in excellent yield (98-99 %.

  14. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  15. Channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    Channeled and random distributions of boron ions implanted over the energy range 50 keV--1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the or axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak

  16. Influence of pollution of boron chlorinity ratio

    Digital Repository Service at National Institute of Oceanography (India)

    Narvekar, P.V.; Zingde, M.D.

    Presence of boron in domestic wastewater has resulted in high B/CI ratio at some locations in the coastal water around Bombay. A widest range (0.215-0.281) of B/CI was observed at a location with high influence of wastewater release. The mean B...

  17. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  18. Boron carbide synthesis at plasma spray process

    Czech Academy of Sciences Publication Activity Database

    Ctibor, Pavel; Brožek, Vlastimil; Hofman, R.

    Bari : Department of Chemistry, University of Bari, 2003 - (d'Agostino, R.; Favia, P.; Fracassi, F.; Palumbo, F.). s. 631 [International Symposium on Plasma Chemistry/16th./. 22.06.2003-27.06.2003, Taormina] Institutional research plan: CEZ:AV0Z2043910 Keywords : boron carbide , plasma spray process Subject RIV: BL - Plasma and Gas Discharge Physics

  19. Joining of boron carbide using nickel interlayer

    International Nuclear Information System (INIS)

    Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250degC. The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

  20. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32. ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.163, year: 2014

  1. The manufacturing method of boron carbide

    International Nuclear Information System (INIS)

    The new method for manufacturing of boron carbide as powder with controlled purity and surface development has been described. The suspension of boric acid aqueous solution and carbon black in alcohol has been homogenized mechanically. Water and alcohol are then evaporated during mixing. After drying homogenous mixture is heated in temperature range of 1270-1870 C during one hour

  2. Novel Boron Based Multilayer Thermal Neutron Detector

    CERN Document Server

    SCHIEBER, M

    2010-01-01

    The detector contains four or more layers of natural Boron absorbing thermal neutrons. Thickness of a layer is 0.4 - 1.2 mg/cm2. The layers are deposited on one or on both sides of a metal surface used as contacts. Between the absorbing layers there are gas-filled gaps 3 - 6 mm thick. Electric field of 100 - 200 V/cm is applied to the gas-filled gaps. Natural Boron contains almost 20% of 10B isotope. When atoms of 10B capture a thermal neutron, nuclear reaction occurs, as a result of which two heavy particles - alpha particle and ion 7Li - from the thin absorber layer are emitted in opposing sides. One of the two particles penetrates into gas-filled gap between Boron layers and ionizes the gas. An impulse of electric current is created in the gas-filled gap actuated by the applied electric field. The impulse is registered by an electronic circuit. We have made and tested detectors containing from two to sixteen layers of natural Boron with an efficiency of thermal neutron registration from 2.9% to 12.5% accor...

  3. The Laser Ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films

    Czech Academy of Sciences Publication Activity Database

    Stuchlíková, The-Ha; Fajgar, Radek; Koštejn, Martin; Dřínek, Vladislav; Remeš, Zdeněk; Stuchlík, Jiří

    Tokyo: The Japan Society of Applied Physics, 2015 - (Asano, T.), "011302-1"-"011302-5" ISBN 978-4-86348-491-7. [International Conference and Summer School on Advanced Silicide Technology 2014. Tokyo (JP), 19.07.2014-21.07.2014] R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : PECVD * amorphous silicon * reactive laser ablation Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Silicene versus two-dimensional ordered silicide: atomic and electronic structure of Si-(√19×√19)R23.4◦/Pt(111)

    Czech Academy of Sciences Publication Activity Database

    Švec, Martin; Hapala, Prokop; Ondráček, Martin; Merino, P.; Blanco-Rey, M.; Mutombo, Pingo; Vondráček, Martin; Polyak, Yaroslav; Cháb, Vladimír; Martín Gago, J.A.; Jelínek, Pavel

    2014-01-01

    Roč. 89, č. 20 (2014), "201412-1"-"201412-5". ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011029; GA ČR(CZ) GA14-02079S Grant ostatní: SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : silicene * silicide * surface alloy * STM * photoemission spectroscopy * ARUPS * DFT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  5. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing; Comportement du silicium en milieu nitrique. Application au retraitement des combustibles siliciures d'uranium

    Energy Technology Data Exchange (ETDEWEB)

    Cheroux, L

    2001-07-01

    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  6. BCM6: New Generation of Boron Meter

    International Nuclear Information System (INIS)

    Full text of publication follows: Rolls-Royce has developed a new generation of boron meter, based on more than 30 years of experience. The Rolls-Royce BCM6 boron meter provides Nuclear Power Plant (NPP) operators with the boron concentration of the primary circuit. The meter provides continuous and safe measurements with no manual sampling and no human contact. In this paper, technical features, advantages and customer benefits of the use of the new generation of Rolls-Royce BCM6 boron meter will be detailed. Values and associated alarms are provides over different media: 4-20 mA outputs, relays, displays in the main control room and in the chemical lab, and digital links. A special alarm avoids unexpected homogeneous dilution of the primary circuit, which is a critical operational parameter. The Rolls-Royce BCM6 boron meter is fully configurable over a set of parameters allowing adaptation to customer needs. It has a differential capability, thus eliminating neutronic noise and keeping measurements accurate, even in the case of fuel clad rupture. Measurements are accurate, reliable, and have a quick response time. Equipment meets state-of-the-art qualification requests. Designed in 2008, the BCM6 boron meter is the newest equipment of Rolls-Royce boron meters product line. It has been chosen to equip the French EPR NPP and complies with the state-of-the-art of the technology. Rolls-Royce has more than 30 years of experience in Instrumentation and Controls with more than 75 NPP units operating worldwide. All of this experience return has been put in this new generation of equipment to provide the customer with the best operation. About Rolls-Royce Rolls-Royce is a global business providing integrated power systems for use on land, at sea and in the air. The Group has a balanced business portfolio with leading market positions. Rolls-Royce has a broad range of civil nuclear expertise, including work related to licensing and safety reviews, engineering design

  7. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  8. Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

    Science.gov (United States)

    Molnár, G.; Dózsa, L.; Erdélyi, R.; Vértesy, Z.; Osváth, Z.

    2015-12-01

    Epitaxial iron silicide nanostructures are grown by solid phase epitaxy on Si(0 0 1) and Si(1 1 1), and by reactive deposition epitaxy on Si(0 0 1) substrates. The formation process is monitored by reflection high-energy electron diffraction. The morphology, size, and electrical properties of the nanoparticles are investigated by scanning electron microscopy, by electrically active scanning probe microscopy, and by confocal Raman spectroscopy. The results show that the shape, size, orientation, and density of the nanoobjects can be tuned by self-assembly, controlled by the lattice misfit between the substrates and iron silicides. The size distribution and shape of the grown nanoparticles depend on the substrate orientation, on the initial thickness of the evaporated iron, on the temperature and time of the annealing, and on the preparation method. The so-called Ostwald ripening phenomena, which state that the bigger objects develop at the expense of smaller ones, controls the density of the nanoparticles. Raman spectra show the bigger objects do not contain β-FeSi2 phase. The different shape nanoparticles exhibit small, about 100 mV barrier compared to the surrounding silicon. The local leakage current of the samples measured by conductive AFM using a Pt coated Si tip is localized in a few nanometers size sites, and the sites which we assume are very small silicide nanoparticles or point defects.

  9. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  10. Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen, E-mail: jstsay@phy.ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)

    2015-05-07

    Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure, and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.

  11. Atomically precise self-organization of perfectly ordered gadolinium–silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(1 1 0)-16 × 2 surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Ie-Hong, E-mail: ihhong@mail.ncyu.edu.tw [Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan (China); Institute of Optoelectronics and Solid State Electronics, National Chiayi University, Chiayi 60004, Taiwan (China); Chen, Tsung-Ming; Tsai, Yung-Feng [Institute of Optoelectronics and Solid State Electronics, National Chiayi University, Chiayi 60004, Taiwan (China)

    2015-09-15

    Highlights: • This work provides a clear understanding of the template-directed self-organization mechanism of a perfectly ordered Gd-silicide nanomesh on a double-domain Si(1 1 0)-16 × 2 and identifies that the anisotropic electromigration is the driving force governing the two-dimensional self-ordering of the atomically precise silicide nanomesh. • The ability to self-organize a variety of the perfectly ordered silicide nanomeshes on Si(1 1 0) with atomic precision represents a promising route for the optimal bottom-up fabrication of well-defined crossbar nanocircuits, which opens the possibility for their utilizations in crossbar nanoarchitectures and Si-based magnetoelectronic nanodevices. - Abstract: Detailed scanning tunneling microscopy and spectroscopy (STM and STS) studies for the effects of thermal migration and electromigration on the growth of gadolinium–silicide nanomeshes on double-domain Si(1 1 0)-16 × 2 surfaces are presented to identify the driving force for the self-organization of a perfectly ordered silicide nanomesh on Si(1 1 0). STM results clearly show that the anisotropic electromigration effect is crucial for the control of the spatial uniformity of a self-ordered silicide nanomesh on Si(1 1 0). This two-dimensional self-ordering driven by the anisotropic-electromigration-induced growth allows the sizes and positions of crossed nanowires to be precisely controlled within a variation of ±0.2 nm over a mesoscopic area, and it can be straightforwardly applied to other metals (e.g., Au and Ce) to grow a variety of highly regular silicide nanomeshes for the applications as nanoscale interconnects. Moreover, the STS results show that the anisotropic electromigration-induced growth causes the metallic horizontal nanowires to cross over the semiconducting oblique nanowires, which opens the possibility for the atomically precise bottom-up fabrication of well-defined crossbar nanoarchitectures.

  12. Atomically precise self-organization of perfectly ordered gadolinium–silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(1 1 0)-16 × 2 surfaces

    International Nuclear Information System (INIS)

    Highlights: • This work provides a clear understanding of the template-directed self-organization mechanism of a perfectly ordered Gd-silicide nanomesh on a double-domain Si(1 1 0)-16 × 2 and identifies that the anisotropic electromigration is the driving force governing the two-dimensional self-ordering of the atomically precise silicide nanomesh. • The ability to self-organize a variety of the perfectly ordered silicide nanomeshes on Si(1 1 0) with atomic precision represents a promising route for the optimal bottom-up fabrication of well-defined crossbar nanocircuits, which opens the possibility for their utilizations in crossbar nanoarchitectures and Si-based magnetoelectronic nanodevices. - Abstract: Detailed scanning tunneling microscopy and spectroscopy (STM and STS) studies for the effects of thermal migration and electromigration on the growth of gadolinium–silicide nanomeshes on double-domain Si(1 1 0)-16 × 2 surfaces are presented to identify the driving force for the self-organization of a perfectly ordered silicide nanomesh on Si(1 1 0). STM results clearly show that the anisotropic electromigration effect is crucial for the control of the spatial uniformity of a self-ordered silicide nanomesh on Si(1 1 0). This two-dimensional self-ordering driven by the anisotropic-electromigration-induced growth allows the sizes and positions of crossed nanowires to be precisely controlled within a variation of ±0.2 nm over a mesoscopic area, and it can be straightforwardly applied to other metals (e.g., Au and Ce) to grow a variety of highly regular silicide nanomeshes for the applications as nanoscale interconnects. Moreover, the STS results show that the anisotropic electromigration-induced growth causes the metallic horizontal nanowires to cross over the semiconducting oblique nanowires, which opens the possibility for the atomically precise bottom-up fabrication of well-defined crossbar nanoarchitectures

  13. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  14. Boron removal from aqueous solution by direct contact membrane distillation

    International Nuclear Information System (INIS)

    The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 μg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution.

  15. ISOBORDAT: An Online Data Base on Boron Isotopes

    International Nuclear Information System (INIS)

    From 1986, boron isotope data in natural substances increased sharply in scientific publications. Analytical difficulties derived from complex geochemical matrices have been faced and interlaboratory calibrations reported in the boron literature. Boron isotopes are nowdays applied to investigate boron origin and migration in natural waters, sources of boron contamination, water-rock interactions and also contribute to water resource management. This is especially important in those areas where boron content exceeds the local regulations for drinking water supply and boron sources need to be identified. ISOBORDAT, an interactive database on boron isotope composition and content in natural waters is presented to the wider community of boron isotope users. The database's structure, scope and applications are reported, along with a discussion on δ11B values obtained in Italian waters. In the database boron data are structured in the following categories: rainwater, rivers, lakes, groundwater and potential contaminants. New categories (medium and high enthalpy fluids from volcanic and geothermal areas) are anticipated. ISOBORDAT aims to be as interactive as possible and will be developed taking into account information and suggestions received. The database is continually undergoing revision to keep pace with continuous data publication. Indications of data that are missing at present are greatly appreciated. (author)

  16. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  17. Structure and single-phase regime of boron carbides

    Science.gov (United States)

    Emin, David

    1988-09-01

    The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B4C (the boron carbide with nominally 20% carbon) has B11C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B4C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C-->C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B13C2, subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B11C-->B12. Maxima of the free energy occur at the most ordered compositions: B4C,B13C2,B14C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides. The significant entropies associated with compositional disorder within the boron carbides, the high temperatures at which boron carbides are formed (>2000 K), and the relatively modest energies associated with replacing carbon atoms with boron atoms enable the material's entropy to be usually important in determining its composition. As a result, boron carbides are able to exist in a wide range of compositions.

  18. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    International Nuclear Information System (INIS)

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 μg 10B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague–Dawley (SD) rats were studied by administrating 25 mg 10B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4–6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  19. Diffusion Boronizing of H11 Hot Work Tool Steel

    Science.gov (United States)

    Jurči, Peter; Hudáková, Mária

    2011-10-01

    The H11 hot work tool steel was boronized at various processing parameters, austenitized, quenched, and tempered to a core hardness of 47-48 HRC. Microstructure, phase constitution, and microhardness of boronized layers were investigated. Effect of boronized region on the bulk properties was determined by the Charpy impact test. Structure of boronized regions is formed by the compound layers and diffusion inter-layer. The compound layers consisted of only (Fe,Cr)2B phase, but in the case of longer processing time, they contained also of the (Fe,Cr)B-phase. The inter-layer contained enhanced portion of carbides, formed due to carbon diffusion from the boride compounds toward the substrate. Microhardness of boronized layers exceeded considerably 2000 HV 0.1. However, boronizing led to a substantial lowering of the Charpy impact toughness of the material.

  20. Boron Rich Solids Sensors, Ultra High Temperature Ceramics, Thermoelectrics, Armor

    CERN Document Server

    Orlovskaya, Nina

    2011-01-01

    The objective of this book is to discuss the current status of research and development of boron-rich solids as sensors, ultra-high temperature ceramics, thermoelectrics, and armor. Novel biological and chemical sensors made of stiff and light-weight boron-rich solids are very exciting and efficient for applications in medical diagnoses, environmental surveillance and the detection of pathogen and biological/chemical terrorism agents. Ultra-high temperature ceramic composites exhibit excellent oxidation and corrosion resistance for hypersonic vehicle applications. Boron-rich solids are also promising candidates for high-temperature thermoelectric conversion. Armor is another very important application of boron-rich solids, since most of them exhibit very high hardness, which makes them perfect candidates with high resistance to ballistic impact. The following topical areas are presented: •boron-rich solids: science and technology; •synthesis and sintering strategies of boron rich solids; •microcantileve...

  1. Boron carbide whisker and platelet reinforced ceramic matrix composites

    International Nuclear Information System (INIS)

    Boron carbide whisker and platelet-reinforced alumina and boron-carbide-whisker-reinforced silicon carbide composites were prepared by hot-pressing. The mechanical properties of hot-pressed boron carbide platelet and whisker-reinforced composites are better than the inherent ceramic matrix. A maximum fracture toughness, K(lc), of 9.5 MPa sq rt m is achieved for alumina/boron carbide whisker composites, 8.6 MPa sq rt m is achieved for alumina/boron carbide platelet composites, and 3.8 MPa sq rt m is achieved for silicon carbide/boron carbide whisker composites. The fracture toughness is dependent on the volume fraction of the platelets and whiskers. 12 refs

  2. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  3. Multidimensional boron transport modeling in subchannel approach

    International Nuclear Information System (INIS)

    The main objective of this study is to implement a solute tracking model into the subchannel code CTF for simulations of boric acid transients. Previously, three different boron tracking models have been implemented into CTF and based on the applied analytical and nodal sensitivity studies the Modified Godunov Scheme approach with a physical diffusion term has been selected as the most accurate and best estimate solution. This paper will present the implementation of a multidimensional boron transport modeling with Modified Godunov Scheme within a thermal-hydraulic code based on a subchannel approach. Based on the cross flow mechanism in a multiple-subchannel rod bundle geometry, heat transfer and lateral pressure drop effects will be discussed in deboration and boration case studies. (author)

  4. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  5. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  6. The spectrophotometric determination of boron in tourmalines

    Directory of Open Access Journals (Sweden)

    LJILJANA JAKSIC

    2005-02-01

    Full Text Available A procedure for the spectrophotometric determination of macro amounts of boron in tourmaline with azomethine H is described. The used tourmaline concentrate was obtained by magnetic separation and heavy-liquids purification of the schorl zone of pegmatite or granite aplite. The samples of tourmaline were decomposed by fusion with anhydrous sodium carbonate and taken up in dilute hydrochloric acid. The interfering effects of iron and aluminium were eliminated by masking with an EDTA – NTA solution. After pH adjustment, the boron was reacted with azomethine H and the absorbance of the obtained coloured complex was measured at 415 nm. The results are compared with those obtained by other procedures. The relative error of the determination was less than 3 %.

  7. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  8. Boron-10 ABUNCL Models of Fuel Testing

    Energy Technology Data Exchange (ETDEWEB)

    Siciliano, Edward R.; Lintereur, Azaree T.; Kouzes, Richard T.; Ely, James H.

    2013-10-01

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results from MCNP simulations of the General Electric Reuter-Stokes Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) active configuration model with fuel pins previously measured at Los Alamos National Laboratory. A comparison of the GE-ABUNCL simulations and simulations of 3He based UNCL-II active counter (the system for which the GE-ABUNCL was targeted to replace) with the same fuel pin assemblies is also provided.

  9. Behavior of Disordered Boron Carbide under Stress

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W.; Chhowalla, Manish

    2006-07-01

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6GPa≈P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2 3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  10. Investigation of boron segregation in low carbon steel

    OpenAIRE

    J. Lis; Lis, A; Kolan, C.

    2011-01-01

    Traces of born in the range 0,002-0,009 % are usually added to many grades of steel. The effect of boron on phase transformations and hardenability of low carbon low alloy steels depends on the form of its behavior in solid solution either in segregations or in precipitations. Temperature and cooling rate determine the existence of boron segregations on grain boundaries. In present paper simulations of boron concentrations were calculated with computer programme DICTRA for low carbon 0,08 %C ...

  11. Program for qualifying CNEA (National Atomic Energy Commission) as a manufacturer of low enriched uranium silicide fuels

    International Nuclear Information System (INIS)

    Full text: This report presents the program for the production and irradiation of a low enriched uranium (LEU) fuel element containing a dispersion of U3Si2 particles in an Al matrix, with a total uranium content of 4.8 g/cm3. The project is being carried out by the Nuclear Fuels Department of the National Atomic Energy Commission (CNEA) of Argentina and aims at qualifying our organization as manufacturer of LEU fuel elements for research reactors. The program involves the design, fissile material production, components fabrication and inspection, assembly, irradiation and postirradiation tests of two prototypes. The meat will be a dispersion of U3Si2 in an Al matrix with a total uranium content of 4.8 g/cm3. The irradiations will be performed at the RA-3. The first prototype is conceived in such a way to facilitate the posterior disassembly and PIE examinations. The second one will have the design of the future normal fuel elements of the RA-3. This project relies on the experience in CNEA in the production of standard fuel elements for the RA-3 and of uranium silicide mini plates successfully tested at the Oak Ridge Research Reactor within the RERTR program (Reduced Enrichment for Research and Test Reactors). Important investments have already been made in the installations for fuel elements production and PIE

  12. Electron microscopy studies of lutetium doped erbium silicide (Er0.9Lu0.1)5Si4

    International Nuclear Information System (INIS)

    Examination of bulk microstructures of lutetium doped erbium silicide (Er0.9Lu0.1)5Si4 (space group: Pnma) using scanning and transmission electron microscopy (SEM, TEM) reveals the existence of thin plates of a hexagonal phase (space group: P63/mcm) where the stoichiometric ratio in moles between the rare earths and Si is 5 to 3, i. e the 5:3 phase. The orientation relationship between the matrix and the plates was determined as [010]m ∼ -parallel [-1010]p. This observation adds credence to the assumption that all linear features noted in alloys of the rare-earth intermetallic family R5(SixGe1-x)4 are of the stoichiometric ratio 5:3 and possess a common orientation relationship with the parent 5:4 alloys. - Highlights: → The linear features observed in the (Er0.9Lu0.1)5Si4 sample are hexagonal 5:3 plates. → Thickness of 5:3 plates in 5:4 alloys made by tri-arc pulling is greater than made by arc-melting. → The orientation relationship between 5:3 plates and the matrix is [010]m ∼ ||[-1010]p.

  13. A comparison of the metallurgical behaviour of dispersion fuels with uranium silicides and U6Fe as dispersants

    International Nuclear Information System (INIS)

    In the past few years metallurgical studies have been carried out to develop fuel dispersions with U-densities up to 7.0 Mg U m-3. Uranium silicides have been considered to be the prime candidates as dispersants; U6Fe being a potential alternative on account of its higher U-density. The objective of this paper is to compare the metallurgical behaviour of these two material combinations with regard to the following aspects: (1) preparation of the compounds U3Si, U3Si2 and U6Fe; (2) powder metallurgical processing to miniature fuel element plates; (3) reaction behaviour under equilibrium conditions in the relevant portions of the ternary U-Si-Al and U-Fe-Al systems; (4) dimensional stability of the fuel plates after prolonged thermal treatment; (5) thermochemical behaviour of fuel plates at temperatures near the melting point of the cladding. Based on this data, the possible advantages of each fuel combination are discussed. (author)

  14. Boron/aluminum shelf for shuttle orbiter

    International Nuclear Information System (INIS)

    Boron/aluminum skins and channels were used in the fabrication of a prototype honeycomb sandwich avionics shelf. The avionic shelves are stiffness-critical and must be vibration tolerant. In conjunction with the shelf mounting system, they must isolate the avionics equipment from the severe vibration of the primary and secondary structure nearby. Design rationale, fabrication procedures, vibration test criteria and test results are presented. (9 fig) (U.S.)

  15. Boron Nitride Nanosheets for Metal Protection

    OpenAIRE

    Li, Lu Hua; Xing, Tan; Chen, Ying; Jones, Rob

    2015-01-01

    Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insu...

  16. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  17. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU

    2005-01-01

    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  18. Thermal conductivity of nanostructured boron nitride materials.

    Science.gov (United States)

    Tang, Chengchun; Bando, Yoshio; Liu, Changhong; Fan, Shoushan; Zhang, Jun; Ding, Xiaoxia; Golberg, Dmitri

    2006-06-01

    We have measured the thermal conductivity of bulky pellets made of various boron nitride (BN)-based nanomaterials, including spherical nanoparticles, perfectly structured, bamboo-like nanotubes, and collapsed nanotubes. The thermal conductivity strongly depends on the morphology of the BN nanomaterials, especially on the surface structure. Spherical BN particles have the lowest thermal conductivity while the collapsed BN nanotubes possess the best thermoconductive properties. A model was proposed to explain the experimental observations based on the heat percolation passage considerations. PMID:16722739

  19. Channeling of boron ions into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lecrosnier, D.; Paugam, J.; Gallou, J.

    1977-04-01

    Channeled and random distributions of boron ions implanted over the energy range 50 keV--1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the <110> or <111> axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak.

  20. Boron content of the Freetown drinking water

    International Nuclear Information System (INIS)

    A method is described for the analyses of water samples in the Freetown area of Sierra Leone for their boron concentrations. The method involves alpha counting during thermal neutron irradiation of the samples utilising the 10Ba(n,α)7Li reaction. The alpha counting is via a liquid scintillator which also incorporates the water samples. A detailed outline of the experimental setup is given and the results obtained from measurement on water samples presented. (author)

  1. Boron carbide synthesis by plasma spray process

    Czech Academy of Sciences Publication Activity Database

    Ctibor, Pavel; Brožek, Vlastimil; Hofman, R.

    Bari : Department of Chemistry, University of Bari, 2003 - (d'Agostino, R.; Favia, P.; Fracassi, F.; Palumbo, F.), s. - [International Symposium on Plasma Chemistry/16th./. Taormina (IT), 22.06.2003-27.06.2003] R&D Projects: GA ČR GA104/01/0149 Institutional research plan: CEZ:AV0Z2043910 Keywords : boron carbide , plasma spray, synthesis Subject RIV: BL - Plasma and Gas Discharge Physics

  2. Plasma Spray Deposition of Boron Carbide

    Czech Academy of Sciences Publication Activity Database

    Brožek, Vlastimil; Hofman, R.; Ctibor, Pavel; Hrabovský, Milan

    Praha : MAXDORF, s.r.o., 2002 - (Nitsch, K.; Rodová, M.). s. 11-12 [Development of Materials Science in Research and Education.. 10.09.2002-12.09.2002, Ostravice] R&D Projects: GA ČR GA104/01/0149; GA ČR GA202/01/1563 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma spray, boron carbide Subject RIV: BL - Plasma and Gas Discharge Physics

  3. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  4. Functionalized boron-dipyrromethenes and their applications

    OpenAIRE

    M. Ravikanth, M; Vellanki,Lakshmi; Sharma,Ritambhara

    2016-01-01

    Vellanki Lakshmi, Ritambhara Sharma, Mangalampalli Ravikanth Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, IndiaAbstract: Boron-dipyrromethenes/BF2-dipyrrins (BODIPYs) are highly fluorescent dyes with a wide range of applications in various fields because of their attractive photophysical properties. One of the salient features of BODIPYs is that the properties of the BODIPY can be fine-tuned at will by selectively introducing the substituent(s) at the desired locati...

  5. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  6. Clinical aspects of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy is potentially useful in treating malignant tumors of the central nervous system and is technically possible. Additional in vitro and in vivo testing is required to determine toxicities, normal tissue tolerances and tissue responses to treatment parameters. Adequate tumor uptake of the capture agent can be evaluated clinically prior to implementation of a finalized treatment protocol. Phase I and Phase II protocol development, clinical pharmacokinetic studies and neutron beam development

  7. Application of Cycloaddition Reactions to the Syntheses of Novel Boron Compounds

    OpenAIRE

    John A. Maguire; Hosmane, Narayan S; Yinghuai Zhu; Xiao Siwei

    2010-01-01

    This review covers the application of cycloaddition reactions in forming the boron-containing compounds such as symmetric star-shaped boron-enriched dendritic molecules, nano-structured boron materials and aromatic boronic esters. The resulting boron compounds are potentially important reagents for both materials science and medical applications such as in boron neutron capture therapy (BNCT) in cancer treatment and as drug delivery agents and synthetic intermediates for carbon-carbon cross-c...

  8. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  9. Boron impregnation treatment of Eucalyptus grandis wood.

    Science.gov (United States)

    Dhamodaran, T K; Gnanaharan, R

    2007-08-01

    Eucalyptus grandis is suitable for small timber purposes, but its wood is reported to be non-durable and difficult to treat. Boron compounds being diffusible, and the vacuum-pressure impregnation (VPI) method being more suitable for industrial-scale treatment, the possibility of boron impregnation of partially dry to green timber was investigated using a 6% boric acid equivalent (BAE) solution of boric acid and borax in the ratio 1:1.5 under different treatment schedules. It was found that E. grandis wood, even in green condition, could be pressure treated to desired chemical dry salt retention (DSR) and penetration levels using 6% BAE solution. Up to a thickness of 50mm, in order to achieve a DSR of 5 kg/m(3) boron compounds, the desired DSR level as per the Indian Standard for perishable timbers for indoor use, it was found that neither the moisture content of wood nor the treatment schedule posed any problem as far as the treatability of E. grandis wood was concerned. PMID:17046244

  10. Analysis of heterogeneous boron dilution sequences

    International Nuclear Information System (INIS)

    In the scope of the international SETH project (focused on boron dilution sequences), the Spanish Nuclear Regulatory Commission (CSN) and the electric energy industry of Spain (UNESA) have promoted in Spain a national project for the analysis and application of the SETH results to the Spanish nuclear power plants. As part of this project, our team has performed a review and analysis of the different sequences that could lead to a boron dilution in the primary circuit of a pressurized water reactor (PWR). On a first stage of the project we have analyzed the different sequences and the phenomenologies that could lead to inadvertent boron dilution in the primary system (about twenty different sequences are described in the literature), the core damage frequency of each one, the projects and experiments carried out on several experimental facilities and the modifications performed in order to avoid or to mitigate this kind of sequences. On a second one we have reviewed the relation between the operating procedures, Westinghouse design reactors, and this kind of sequences. Finally we have analyzed the simulation problems of these kind of sequences and performed several numerical simulations with the TRAC-M (TRACE) code applied to numerical benchmarks and also to a 3D vessel model. (author)

  11. Boron-containing nuclear safety materials

    International Nuclear Information System (INIS)

    As insurance against reactor runaway or other unplanned excursions, gas-cooled, graphite-moderated reactors are provided with a secondary shut-down mechanism which serves as a back-up to the primary control rod system. This back-up includes a hopper located above fuel channels in the core, equipped with a quick discharge mechanism, which is filled with boron-containing spheres. In an emergency, this hopper discharges the spheres which then cascade down the channels and ''poison'' the uranium fission reaction by absorbing thermal neutrons - the propagators of the chain reaction. Within six months time, a process was successfully developed based on silicon carbide reaction-bonding, which yielded a strong, hard, oxidation-resistant, boron-containing shut-down ball. Test materials were exposed to water saturated argon for three hours at each of several temperatures. While normal boron carbide-graphite balls were completely vaporized, the Cerashield balls remained basically unaffected. Had the reactor at Chernobyl been outfitted with Cerashield shut-down balls, it might never have become famous

  12. Boron dose enhancement for Cf-252 brachytherapy

    International Nuclear Information System (INIS)

    Full text: Monte Carlo modelling of a Cf-252 source in water and in tissue has shown that there is a significant therapeutic advantage obtained if B-10 is present in the tumour cells. This study analyses the advantage in terms of therapeutic margin, defined as the distance from the border of the treatment volume where boron-loaded tumour cells will receive a therapeutic dose. Calculations were made with MCNP version 4a on a Pentium 60 MHz computer. Large voxel sizes allowed 70 minute runs to achieve statistical uncertainties of 5% or less for 100,000 source neutrons. Later runs with smaller voxels confirmed the accuracy of the initial calculations. Calculations were made for treatment volume radii up to 11 cm and 30 ppm boron-10. The therapeutic margin for radii in the range 3-9 cm is approximately 10% of the tumour radius. This results in a 30% increase in the volume inside which peripheral tumour cells may receive a therapeutic dose. The median therapeutic ratio within the therapeutic margin varied from 1.05 at 3 cm up to 1.25 at 10 cm. Thus there is little benefit for less advanced tumours with thickness less than 3 cm. However, cervical cancer frequently presents in an advanced state in Southeast Asia and in Aboriginal communities in Australia, partially attributable to low Pap smear screening rates. These conclusions support the development and testing of boron compounds in in vitro and in vivo models for cervical cancer

  13. Boron removal from molten silicon using sodium-based slags

    Institute of Scientific and Technical Information of China (English)

    Yin Changhao; Hu Bingfeng; Huang Xinming

    2011-01-01

    Slag refining,as an important option for boron removal to produce solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si),has attracted increasing attention.In this paper,Na2CO3-SiO2 systems were chosen as the sodium-based refining slag materials for boron removal from molten silicon.Furthermore,the effect of Al2O3 addition for boron removal was studied in detail,which showed that an appropriate amount of Al2O3 can help retention of the basicity of the slags,hence improving the boron removal rate.

  14. Boron distribution in normal and impaired vascular tissue

    International Nuclear Information System (INIS)

    The microdistribution of boron compounds and the response to Boron Neutron Capture Therapy (BNCT) in normal or impaired vascular structures have not been fully investigated. In this study, we measured the boron concentrations in rat normal vascular tissue for a potential application of BNCT to prevent restenosis following carotid stenting. Male inbred Wistar rats, 6 weeks of age, were used. After intravenous administration of boron compounds (BSH, BPA, or boron porphyrins), rats were killed at either 1, 2, or 3 hours, and the aortic arch, vena cava, blood, liver, kidney, muscle, skin, and brain were collected for measuring boron concentrations in the sample. Boron concentrations in vascular structures, although dependent on the time after administration, are higher than those in blood and surrounding tissue such as muscle or skin. Given that boron compounds such as boron porphyrins are incorporated into arterial tissues, and more into impaired than in normal intima, BNCT might be effective in inhibiting restenosis following carotid artery stenting or coronary artery stenting. (author)

  15. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite and the influence of it on Mg/Ca-SST proxy and δ11B-pH proxy. The results show that both the concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (

  16. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite and the influence of it on Mg/Ca-SST proxy and δ11B-pH proxy. The results show that both the concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (Kd) between deposited brucite and final seawater are control...

  17. Combustion synthesis of boron carbide - a spectroscopic studies

    International Nuclear Information System (INIS)

    Boron Carbide is one of the hardest materials known, ranking third behind diamond and cubic boron nitride. It is the hardest material produced in tonnage quantities. Boron carbide (BxCx) enriched in the 10B isotope is used as a control rod material in the nuclear industry due to its high neutron absorption cross section and other favorable physico-chemical properties. Conventional methods of preparation of boron carbide are energy intensive processes accompanied by huge loss of boron. Attempts were made at IGCAR Kalpakkam to develop energy efficient and cost effective methods to prepare boron carbide. Nuclear applications of boron carbide include shielding, control rod and shut down pellets. Within control rods, boron carbide is often powdered, to increase its surface area. The products of the gel combustion and microwave synthesis experiments were characterized for phase purity by X-ray diffraction (XRD). The carbide formation was ascertained using finger-print spectroscopy of Fourier transform infrared (FTIR). Samples of pyrolized/microwave heated powder were characterized for surface morphology using electron microscope (SEM). The present work shows the recent advances in understanding of structural and chemical variation in boron carbide and their influence on morphology, optical and vibrational property result discussed in details. (author)

  18. Dosage of boron traces in graphite, uranium and beryllium oxide

    International Nuclear Information System (INIS)

    The problem of the dosage of the boron in the materials serving to the construction of nuclear reactors arises of the following way: to determine to about 0,1 ppm close to the quantities of boron of the order of tenth ppm. We have chosen the colorimetric analysis with curcumin as method of dosage. To reach the indicated contents, it is necessary to do a previous separation of the boron and the materials of basis, either by extraction of tetraphenylarsonium fluoborate in the case of the boron dosage in uranium and the beryllium oxide, either by the use of a cations exchanger resin of in the case of graphite. (M.B.)

  19. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  20. ADSORPTION POTENTIAL OF UNMODIFIED RICE HUSK FOR BORON REMOVAL

    OpenAIRE

    Hasfalina Che Man,; Wei Hong Chin,; Maryam Rahmati Zadeh,; Mohd Rashid Mohd Yusof

    2012-01-01

    A batch study of boron removal from aqueous solutions by adsorption using rice husk was carried out. The effect of selected parameters such as particle size, pH, adsorbent dosage, and initial concentration of adsorbate on boron removal was investigated in the study. Results showed that the maximum boron removal was obtained with the rice husk particle size between 0.425 mm and 1.0 mm at pH 5. Boron removal was increased with an increasing amount of adsorbent dosage but decreased as the initia...

  1. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    WEIYOUZHANG

    2001-01-01

    Relationships between seed yields of oilseed rape(Brassica napus L.) and extractable boron concen-trations in three soil layers(A,P and W) were investigated through ten experiments on three types of soils(Alluvic Entisols,Udic Ferrisols and Sagnic Anthrosols) in northern,Western and middle Zhejing Province.Among several mathematical models used to described the relationships,the polynomial equation,y=a+bx+cx2+dx3,where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil,was the best one.The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40-0.52 mg kg-1,The extractable boron concentration of the P layers of the soils was the most stable,The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  2. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Relationships between seed yields of oilseed rape (Brassica napus L.) and extractable boron concen- trations in three soil layers (A, P and W) were investigated through ten experiments on three types of soils (Alluvic Entisols, Udic Ferrisols and Stagnic Anthrosols) in northern, western and middle Zhejiang Province. Among several mathematical models used to described the relationships, the polynomial equation, y = a + bx + cx2 + dx3, where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil, was the best one. The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40~0.52 mg kg-1. The extractable boron concentration of the P layers of the soils was the most stable. The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  3. Mechanisms of the boron carbide and boron nitride preferred sputtering by low energy ions bombardment

    International Nuclear Information System (INIS)

    The ion irradiation of BN and B4C leads to enriching of the materials with the lighter component - borons as the experiment shows . With a view to explain this effect sputtering of BN and B4C under the irradiation by the He+ and Ar+ ions with the energy E0=0,5-5 keV has been calculated with computer modelling and the real structure of BN has been considered. In the case of B4C the calculations have been carried with Monte-Carlo code. It was shown that enriching of BN by boron may be accounted for building up the molecules N2 on the irradiated surface and their desorbing. The enriching of B4C with boron results from the difference of the binding energy of the B and C atoms. (author). 10 refs., 5 tabs

  4. Production process for boron carbide coated carbon material and boron carbide coated carbon material obtained by the production process

    International Nuclear Information System (INIS)

    A boron carbide coated carbon material is used for a plasma facing material of a thermonuclear reactor. The surface of a carbon material is chemically reacted with boron oxide to convert it into boron carbide. Then, it is subjected to heat treatment at a temperature of not lower than 1600degC in highly evacuated or inactive atmosphere to attain a boron carbide coated carbon material. The carbon material used is an artificial graphite or a carbon fiber reinforced carbon composite material. In the heat treatment, when the atmosphere is in vacuum, it is highly evacuated to less than 10Pa. Alternatively, in a case of inactive atmosphere, argon or helium gas each having oxygen and nitrogen content of not more than 20ppm is used. With such procedures, there can be obtained a boron carbide-coated carbon material with low content of oxygen and nitrogen impurities contained in the boron carbide coating membrane thereby hardly releasing gases. (I.N.)

  5. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S. [Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

    2016-02-15

    The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

  6. Determination of isotopic composition of boron in boron carbide by TIMS and PIGE: an inter-comparison study

    International Nuclear Information System (INIS)

    The paper reports a comparison of results on the determination of isotopic composition of boron in boron carbide (B4C) samples by Thermal Ionisation Mass Spectrometry (TIMS) and Particle Induced Gamma ray Spectrometry (PIGE). B4C samples having varying boron isotopic composition (natural, enriched with respect to 10B) and their synthetic mixtures) have been analysed by both the techniques. The 10B atom% was found to be in the range of 20-67%. (author)

  7. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  8. Determination of boron in graphite, boron carbide and glass by ICP-MS, ICP-OES and conventional wet chemical methods

    International Nuclear Information System (INIS)

    Boron is an important element of interest in nuclear reactor materials due to its high neutron absorption cross section (σ0 =3837 barns for 10B). In the present paper, R and D work and routinely used methods have been described for the analysis of case samples (1) Graphite where boron is present at trace levels, (2) Boron Carbide having boron concentration of about 80% and (3) Glass containing 4-6 % boron. (author)

  9. Cosmis Lithium-Beryllium-Boron Story

    Science.gov (United States)

    Vangioni-Flam, E.; Cassé, M.

    Light element nucleosynthesis is an important chapter of nuclear astrophysics. Specifically, the rare and fragile light nuclei Lithium, Beryllium and Boron (LiBeB) are not generated in the normal course of stellar nucleosynthesis (except Lithium-7) and are, in fact, destroyed in stellar interiors. This characteristic is reflected in the low abundance of these simple species. Up to recently, the most plausible interpretation was that galactic cosmic rays (GCR) interact with interstellar CNO to form LiBeB. Other origins have been also identified, primordial and stellar (Lithium-7) and supernova neutrino spallation (Lithium-7 and Boron-11). In contrast, Beryllium-9, Boron-10 and Lithium-6 are pure spallative products. This last isotope presents a special interest since the Lithium-7/Lithium-6 ratio has been measured in a few halo stars offering a new constraint on the early galactic evolution. However, in the nineties, new observations prompted astrophysicists to reassess the question. Optical measurements of the beryllium and boron abundances in halo stars have been achieved by the 10 meters KECK telescope and the Hubble Space Telescope. These observations indicate a quasi linear correlation between Be and B vs Fe, at least at low metallicity, unexpected on the basis of GCR scenario, predicting a quadratic relationship. As a consequence, the origin and the evolution of the LiBeB nuclei has been revisited. This linearity implies the acceleration of C and O nuclei freshly synthesized and their fragmentation on the the interstellar Hydrogen and Helium. Wolf-Rayet stars and supernovae via the shock waves induced, are the best candidates to the acceleration of their own material enriched into C and O; so LiBeB is produced independently of the Interstellar Medium chemical composition. Moreover, neutrinos emitted by the newly born neutron stars interacting with the C layer of the supernova could produce specifically Lithium-7 and Boron-11. This process is supported by the

  10. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  11. Implementation of Low Boron Core for APR1400 Initial Cycle

    International Nuclear Information System (INIS)

    Low boron capability of a nuclear power plant is rather a qualitative specification requiring the nuclear power plant to be shut down by control rods alone at any time of a plant cycle according to EUR. The reduction of soluble boron is beneficial since it gives the reduction of the corrosive effects in the plant system and improves plant safety giving more negative MTC. Thus, it is necessary to reduce the amount of soluble boron for the criticality to achieve the low boron capability. However, the reduction of soluble boron has its own set of specific challenges that must be overcome. There are two methods to enable the reduction of soluble boron without modifying plant system significantly. The goal of this study is to investigate the loading pattern to achieve the soluble boron reduction for Shin-Kori Unit 5 APR1400 initial core using the low and high content gadolinia burnable absorbers with standard fuel rod enrichment and to verify the feasibility of low boron core with conventional gadolinia burnable absorbers only. For this study, KARMA has been employed to solve 2-D Transport equation, and ASTRA is used for full core analysis. It was possible to achieve the low boron core for APR1400 Cycle 1 using extended usage of two types of gadolinia burnable absorbers sacrificing fuel cycle economy a little bit while enhancing plant safety significantly. Gd rod patterns within an assembly were optimized through geometrical weighting and loading pattern was developed based on these patterns. The amount of soluble boron reduction achieved is 45.4%. The improvement in plant safety is significant resulting in the reduction of least negative best-estimate MTC by about 4 pcm. Also shutdown margin is increased slightly for low boron core. However, the behavior of axial power shape turns out to be undesirable showing a relatively large fluctuation caused by the more negative MTC. It was found that the low boron core might impose kind of operational difficulty. It is usually

  12. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    International Nuclear Information System (INIS)

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration

  13. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration.

  14. Boron isotope fractionation during brucite deposition from artificial seawater

    Directory of Open Access Journals (Sweden)

    J. Xiao

    2011-03-01

    Full Text Available Experiments involving boron incorporation into brucite (Mg(OH2 from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite. The results show that both concentration of boron in deposited brucite ([B]d and its boron partition coefficient (Kd between deposited brucite and final seawater are controlled by pH of the solution. The incorporation capacity of boron into brucite is much stronger than that into oxides and clay minerals. The isotopic compositions of boron in deposited brucite (δ11Bd are higher than those in the associated artificial seawater (δ11Bisw with fractionation factors ranging between 1.0177 and 1.0569, resulting from the preferential incorporation of B(OH3 into brucite. Both boron adsorptions onto brucite and precipitation reaction of H3BO3 with brucite exist during deposition of brucite from artificial seawater. The simultaneous occurrence of both processes determines the boron concentration and isotopic fractionation of brucite. The isotopic fractionation behaviors and mechanisms of boron incorporated into brucite are different from those into carbonates. Furthermore, the isotopic compositions of boron in modern corals might be affected by the existence of brucite in madrepore and the preferential incorporation of B(OH3 into brucite. An exploratory study for the influence of brucite on the boron isotopic composition in modern corals is justifiable.

  15. Influence of Boron on transformation behavior during continuous cooling of low alloyed steels

    Energy Technology Data Exchange (ETDEWEB)

    Terzic, A., E-mail: Adnan.Terzic@imf.tu-freiberg.de [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Calcagnotto, M. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Guk, S. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Schulz, T. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Kawalla, R. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany)

    2013-11-01

    Abstracts: The phase transformation behavior during continuous cooling of low-carbon (LC) Boron-treated steels was studied. Furthermore, the influence of combining Boron with Nb or Ti or V on transformation kinetics was investigated. Additions of Boron to LC steels have a strong influence on the ferrite transformation. By adding 30 ppm Boron to a Boron-free reference alloy the suppressing effect on the ferrite transformation is most pronounced, whereas 10 ppm Boron has almost no effect and 50 ppm Boron the same effect as 30 ppm Boron. Thereby the critical Boron concentration for transformation kinetics in this alloying concept is 30 ppm. The combination of Boron with Ti shifts the phase fields to shorter times and increase the ferrite start temperature, whereas the combination of B+V and B+Nb only affects the ferrite start temperature. Hardness values are mostly influenced by the presence of Boron and strongly depend on the cooling rate.

  16. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  17. The investigation of parameters affecting boron removal by electrocoagulation method

    International Nuclear Information System (INIS)

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm2. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl2. Added CaCl2 increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions

  18. Determination of boron in silicates after ion exchange separation

    Science.gov (United States)

    Kramer, H.

    1955-01-01

    Existing methods for the determination of boron in silicates are not entirely satisfactory. Separation as the methyl ester is lengthy and frequently erratic. An accurate and rapid method applicable to glass, mineral, ore, and water samples uses ion exchange to remove interfering cations, and boron is determined titrimetrically in the presence of mannitol, using a pH meter to indicate the end point.

  19. Low-dimensional boron structures based on icosahedron B12

    Science.gov (United States)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  20. Adsorption characteristics of arsenic and boron by soil

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, M.

    1986-01-01

    In order to obtain baseline data concerning the surface and ground water pollution caused by coal ash disposal, adsorption characteristics of arsenic (III) and boron by soil have been studied through laboratory experiments. The main results are as follows: (1) Arsenic (III) and boron adsorption on soil was strongly dependent on pH with adsorption maxima at pH 8 and 8-9, respectively. (2) Arsenic (III) and boron adsorption on soil over the entire concentration ranges investigated could be described by the Langmuir adsorption isotherm and the Freundlich adsorption isotherm, respectively. The Henry adsorption isotherm was also applicable over the lower concentration ranges of arsenic (III) and boron (As (III): < 0.1 deltag/ml; B: < 5deltag/ml.) (3) Arsenic (III) and boron adsorption on soil is controlled mainly by the contents of extractable Fe oxide and hydroxide for arsenic (III) and by the contents of extractable Al hydroxide and allophane (amorphous aluminium silicates) for boron. (4) Adsorption and movement of arsenic (III) and boron during the infiltration of coal ash leachate in soil layer were investigated by means of the unsteady-state, one-dimensional convective-diffusive mass transport model. This model is very useful for evaluation and prediction of the contamination of ground water by trace elements such as arsenic (III) and boron leached at coal ash disposal site.