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Sample records for boron nitride nanotube

  1. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  2. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  3. Composite Reinforcement using Boron Nitride Nanotubes

    Science.gov (United States)

    2014-05-09

    Final 3. DATES COVERED (From - To) 11-Mar-2013 to 10-Mar-2014 4. TITLE AND SUBTITLE Composite Reinforcement using Boron Nitride Nanotubes...AVAILABILITY STATEMENT Approved for public release. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Boron nitride nanotubes have been proposed as a...and titanium (Ti) metal clusters with boron nitride nanotubes (BNNT). First-principles density-functional theory plus dispersion (DFT-D) calculations

  4. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU

    2005-01-01

    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  5. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  6. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  7. Fe nanowire encapsulated in boron nitride nanotubes

    Science.gov (United States)

    Koi, Naruhiro; Oku, Takeo; Nishijima, Masahiko

    2005-11-01

    Boron nitride (BN) nanotubes, nanohorns, nanocoils were synthesized by annealing Fe 4N and B powders at 1000 °C for 1 h in nitrogen gas atmosphere. Especially, Fe-filled BN nanotubes were produced, and investigated by high-resolution electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy, which indicates that the [110] of Fe is parallel to the BN nanotube axis. Formation mechanism of Fe-filled BN nanotube was speculated based on these results.

  8. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  9. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  10. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  11. Apparatus for the production of boron nitride nanotubes

    Science.gov (United States)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  12. Junctions between a boron nitride nanotube and a boron nitride sheet.

    Science.gov (United States)

    Baowan, Duangkamon; Cox, Barry J; Hill, James M

    2008-02-20

    For future nanoelectromechanical signalling devices, it is vital to understand how to connect various nanostructures. Since boron nitride nanostructures are believed to be good electronic materials, in this paper we elucidate the classification of defect geometries for combining boron nitride structures. Specifically, we determine possible joining structures between a boron nitride nanotube and a flat sheet of hexagonal boron nitride. Firstly, we determine the appropriate defect configurations on which the tube can be connected, given that the energetically favourable rings for boron nitride structures are rings with an even number of sides. A new formula E = 6+2J relating the number of edges E and the number of joining positions J is established for each defect, and the number of possible distinct defects is related to the so-called necklace and bracelet problems of combinatorial theory. Two least squares approaches, which involve variation in bond length and variation in bond angle, are employed to determine the perpendicular connection of both zigzag and armchair boron nitride nanotubes with a boron nitride sheet. Here, three boron nitride tubes, which are (3, 3), (6, 0) and (9, 0) tubes, are joined with the sheet, and Euler's theorem is used to verify geometrically that the connected structures are sound, and their relationship with the bonded potential energy function approach is discussed. For zigzag tubes (n,0), it is proved that such connections investigated here are possible only for n divisible by 3.

  13. Potential applications of boron nitride nanotubes as drug delivery systems.

    Science.gov (United States)

    Ciofani, Gianni

    2010-08-01

    In recent years, there has been an explosion of research in the 'bio-nano' field, with the discovery and introduction of ever more fascinating materials for applications as drug delivery systems, sensors, transducers, and so on. The author's group, for the first time in the literature, proposed boron nitride nanotubes as a valid alternative to carbon nanotubes and other kinds of inorganic materials, because of their improved chemical properties that theoretically guarantee better stability and compatibility in a biological context. In this paper, the bio-applications of boron nitride nanotubes that have emerged in the literature are summarized, with special attention given to their exploitation as safe drug delivery and targeting carriers. Finally, the possibility of combining their physical and chemical properties is approached, highlighting the features that render these innovative nanovectors unique and exceptional candidates for many bio-applications.

  14. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  15. Facile synthesis of boron nitride nanotubes and improved electrical conductivity.

    Science.gov (United States)

    Chen, Yongjun; Luo, Lijie; Zhou, Longchang; Mo, Libin; Tong, Zhangfa

    2010-02-01

    A layer of catalyst film on substrate is usually required during the vapor-liquid-solid (VLS) growth of one-dimensional (1D) nanomaterials. In this work, however, a novel approach for synthesizing high-purity bamboo-like boron nitride (BN) nanotubes directly on commercial stainless steel foils was demonstrated. Synthesis was realized by heating boron and zinc oxide (ZnO) powders at 1200 degrees C under a mixture gas flow of nitrogen and hydrogen. The stainless steel foils played an additional role of catalyst besides the substrate during the VLS growth of the nanotubes. In addition, the electrical conductivity of the BN nanotubes was efficiently improved in a simple way by coating with Au and Pd nanoparticles. The decorated BN nanotubes may find potential applications in catalysts, sensors and nanoelectronics.

  16. Synthesis of boron nitride nanotubes and their applications

    OpenAIRE

    Saban Kalay; Zehra Yilmaz; Ozlem Sen; Melis Emanet; Emine Kazanc; Mustafa Çulha

    2015-01-01

    Boron nitride nanotubes (BNNTs) have been increasingly investigated for use in a wide range of applications due to their unique physicochemical properties including high hydrophobicity, heat and electrical insulation, resistance to oxidation, and hydrogen storage capacity. They are also valued for their possible medical and biomedical applications including drug delivery, use in biomaterials, and neutron capture therapy. In this review, BNNT synthesis methods and the surface modification stra...

  17. Phonon spectrum of single-walled boron nitride nanotubes

    Institute of Scientific and Technical Information of China (English)

    Xiao Yang; Yan Xiao-Hong; Cao Jue-Xian; Mao Yu-Liang; Xiang Jun

    2004-01-01

    Based on a force constant model, we investigated the phonon spectrum and then specific heat of single-walled boron nitride nanotubes. The results show that the frequencies of Raman and infrared active modes decrease with increasing diameter in the low frequency, which is consistent with the results calculated by density functional theory.The fitting formulae for diameter and chirality dependence of specific heat at 300K are given.

  18. Chemical Sharpening, Shortening, and Unzipping of Boron Nitride Nanotubes

    Science.gov (United States)

    Liao, Yunlong; Chen, Zhongfang; Connell, John W.; Fay, Catharine C.; Park, Cheol; Kim, Jae-Woo; Lin, Yi

    2014-01-01

    Boron nitride nanotubes (BNNTs), the one-dimensional member of the boron nitride nanostructure family, are generally accepted to be highly inert to oxidative treatments and can only be covalently modifi ed by highly reactive species. Conversely, it is discovered that the BNNTs can be chemically dispersed and their morphology modifi ed by a relatively mild method: simply sonicating the nanotubes in aqueous ammonia solution. The dispersed nanotubes are significantly corroded, with end-caps removed, tips sharpened, and walls thinned. The sonication treatment in aqueous ammonia solution also removes amorphous BN impurities and shortened BNNTs, resembling various oxidative treatments of carbon nanotubes. Importantly, the majority of BNNTs are at least partially longitudinally cut, or "unzipped". Entangled and freestanding BN nanoribbons (BNNRs), resulting from the unzipping, are found to be approximately 5-20 nm in width and up to a few hundred nanometers in length. This is the fi rst chemical method to obtain BNNRs from BNNT unzipping. This method is not derived from known carbon nanotube unzipping strategies, but is unique to BNNTs because the use of aqueous ammonia solutions specifi cally targets the B-N bond network. This study may pave the way for convenient processing of BNNTs, previously thought to be highly inert, toward controlling their dispersion, purity, lengths, and electronic properties.

  19. Ultrahigh interlayer friction in multiwalled boron nitride nanotubes.

    Science.gov (United States)

    Niguès, A; Siria, A; Vincent, P; Poncharal, P; Bocquet, L

    2014-07-01

    Friction at the nanoscale has revealed a wealth of behaviours that depart strongly from the long-standing macroscopic laws of Amontons-Coulomb. Here, by using a 'Christmas cracker'-type of system in which a multiwalled nanotube is torn apart between a quartz-tuning-fork-based atomic force microscope (TF-AFM) and a nanomanipulator, we compare the mechanical response of multiwalled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and telescopic sliding of the layers. We found that the interlayer friction for insulating BNNTs results in ultrahigh viscous-like dissipation that is proportional to the contact area, whereas for the semimetallic CNTs the sliding friction vanishes within experimental uncertainty. We ascribe this difference to the ionic character of the BN, which allows charge localization. The interlayer viscous friction of BNNTs suggests that BNNT membranes could serve as extremely efficient shock-absorbing surfaces.

  20. Pressure effects on dynamics behavior of multiwall boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Talebian, Taha [Faculty of Engineering, Neyshabur Branch, Islamic Azad University, Neyshabur (Iran, Islamic Republic of)

    2016-01-15

    The dynamic behavior of Multiwall boron nitride nanotubes (MWBNNTs) is investigated by employing multiple elastic shells model. The influences of van der Waals interactions on layers are shown as nonlinear functions of the interlayer distance of MWBNNTs. Governing equations are solved by using the developed finite element method and by employing time history diagrams. The radial wave speed from the outermost layer to the innermost layer is computed. The effects of geometrical factors such as diameter-to-thickness ratio on dynamic behavior of MWBNNTs are determined. The magnification aspects of MWBNNTs are computed, and the effects of surrounding pressures on wave speed and magnification aspect of MWBNNTs are discussed.

  1. Synthesis of boron nitride nanotubes and their applications

    Directory of Open Access Journals (Sweden)

    Saban Kalay

    2015-01-01

    Full Text Available Boron nitride nanotubes (BNNTs have been increasingly investigated for use in a wide range of applications due to their unique physicochemical properties including high hydrophobicity, heat and electrical insulation, resistance to oxidation, and hydrogen storage capacity. They are also valued for their possible medical and biomedical applications including drug delivery, use in biomaterials, and neutron capture therapy. In this review, BNNT synthesis methods and the surface modification strategies are first discussed, and then their toxicity and application studies are summarized. Finally, a perspective for the future use of these novel materials is discussed.

  2. Thermal vibration characteristics of armchair boron-nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Anirban [Department of Mechanical Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Patra, Puneet Kumar [Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Bhattacharya, Baidurya, E-mail: baidurya@civil.iitkgp.ernet.in [Department of Civil Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2015-12-21

    A nanomechanical resonator based sensor works by detecting small changes in the natural frequency of the device in presence of external agents. In this study, we address the length and the temperature-dependent sensitivity of precompressed armchair Boron-Nitride nanotubes towards their use as sensors. The vibrational data, obtained using molecular dynamics simulations, are analyzed for frequency content through the fast Fourier transformation. As the temperature of the system rises, the vibrational spectrum becomes noisy, and the modal frequencies show a red-shift irrespective of the length of the nanotube, suggesting that the nanotube based sensors calibrated at a particular temperature may not function desirably at other temperatures. Temperature-induced noise becomes increasingly pronounced with the decrease in the length of the nanotube. For the shorter nanotube at higher temperatures, we observe multiple closely spaced peaks near the natural frequency, that create a masking effect and reduce the sensitivity of detection. However, longer nanotubes do not show these spurious frequencies, and are considerably more sensitive than the shorter ones.

  3. Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes

    Science.gov (United States)

    Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I.; Wise, Kristopher E.; Lowther, Sharon E.; Fay, Catharine C.; Thibeault, Sheila A.; Bryant, Robert G.

    2015-01-01

    Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buck-paper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions. utilizing the unique characteristics of BNNTs.

  4. Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes.

    Science.gov (United States)

    Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I; Wise, Kristopher E; Lowther, Sharon E; Fay, Catharine C; Thibeault, Sheila A; Bryant, Robert G

    2015-12-22

    Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 °C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buckypaper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions.

  5. Mechanical strength of boron nitride nanotube-polymer interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xiaoming; Ke, Changhong, E-mail: xqwang@uga.edu, E-mail: cke@binghamton.edu [Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, New York 13902 (United States); Zhang, Liuyang; Wang, Xianqiao, E-mail: xqwang@uga.edu, E-mail: cke@binghamton.edu [College of Engineering, University of Georgia, Athens, Georgia 30602 (United States); Park, Cheol [NASA Langley Research Center, Hampton, Virginia 23681 (United States); Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Fay, Catharine C. [NASA Langley Research Center, Hampton, Virginia 23681 (United States)

    2015-12-21

    We investigate the mechanical strength of boron nitride nanotube (BNNT) polymer interfaces by using in situ electron microscopy nanomechanical single-tube pull-out techniques. The nanomechanical measurements show that the shear strengths of BNNT-epoxy and BNNT-poly(methyl methacrylate) interfaces reach 323 and 219 MPa, respectively. Molecular dynamics simulations reveal that the superior load transfer capacity of BNNT-polymer interfaces is ascribed to both the strong van der Waals interactions and Coulomb interactions on BNNT-polymer interfaces. The findings of the extraordinary mechanical strength of BNNT-polymer interfaces suggest that BNNTs are excellent reinforcing nanofiller materials for light-weight and high-strength polymer nanocomposites.

  6. Structure of Boron Nitride Nanotubes: Tube Closing Vs. Chirality

    Science.gov (United States)

    Srivastava, Deepak; Menon, Madhu

    1998-01-01

    The structure of boron nitride nanotubes is investigated using a generalized tight-binding molecular dynamics method. It is shown that dynamic relaxation results in a wavelike or "rippled" surface in which the B atoms rotate inward and the N atoms move outward, reminiscent of the surface relaxation of the III-V semiconductors. More importantly, the three different morphologies of the tube closing with flat, conical and amorphous ends, as observed in experiments, are shown to be directly related to the tube chiralities. The abundance of flat end tubes observed in experiments is, thus, shown to be an indication of the greater stability of "zig-zag" BN tubes over the "arm-chair" tubes under experimental conditions.

  7. Dynamic response of multiwall boron nitride nanotubes subjected to impact

    Indian Academy of Sciences (India)

    S T Talebian; M Tahani

    2015-12-01

    Dynamic behaviours of multiwall boron nitride nanotubes (MWBNNTs) with finite length were studied by employing continuum structure. Multiple elastic shells with nonlinear model of van der Waals interactions were used for developing an inclusive and inexpensive dynamical model of MWBNNTs. The systems of coupled partial differential equations were solved by applying the finite element method. Whole or part of thin and bulky MWBNNTs were exposed to external pressure impact and dynamical treatment were investigated and precision of results were checked by evaluating the answers with those found by other methods. Both deflection and stress studies were carried out for tubes of MWBNNTs and the influences of longitudinal wave caused by external pressure impact were considered in MWBNNTs. Also, time history diagrams of MWBNNTs with impact of initial longitudinal deflection were investigated and the extension of the longitudinal waves through the length of layers were shown and so, wave speed was determined.

  8. Pilot in vivo toxicological investigation of boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    Ciofani G

    2012-01-01

    Full Text Available Gianni Ciofani1, Serena Danti2, Giada Graziana Genchi1,3, Delfo D'Alessandro2, Jean-Luc Pellequer4, Michaël Odorico4, Virgilio Mattoli1, Mario Giorgi51Italian Institute of Technology, Center of MicroBioRobotics co Scuola Superiore Sant'Anna, 2Department of Neuroscience, University of Pisa, 3The BioRobotics Institute, Scuola Superiore Sant'Anna, Pisa, Italy; 4Commissariat à l'Energie Atomique, Institut de Biologie Environnementale et Biotechnologie, Department of Biochemistry and Nuclear Toxicology, Bagnols-sur-Cèze, France; 5Division of Pharmacology and Toxicology, Veterinary Clinics Department, University of Pisa, Pisa, ItalyAbstract: Boron nitride nanotubes (BNNTs have attracted huge attention in many different research fields thanks to their outstanding chemical and physical properties. During recent years, our group has pioneered the use of BNNTs for biomedical applications, first of all assessing their in vitro cytocompatibility on many different cell lines. At this point, in vivo investigations are necessary before proceeding toward realistic developments of the proposed applications. In this communication, we report a pilot toxicological study of BNNTs in rabbits. Animals were injected with a 1 mg/kg BNNT solution and blood tests were performed up to 72 hours after injection. The analyses aimed at evaluating any acute alteration of hematic parameters that could represent evidence of functional impairment in blood, liver, and kidneys. Even if preliminary, the data are highly promising, as they showed no adverse effects on all the evaluated parameters, and therefore suggest the possibility of the realistic application of BNNTs in the biomedical field.Keywords: boron nitride nanotubes, in vivo testing, toxicology

  9. Efficient FEM simulation of static and free vibration behavior of single walled boron nitride nanotubes

    Science.gov (United States)

    Giannopoulos, Georgios I.; Kontoni, Denise-Penelope N.; Georgantzinos, Stylianos K.

    2016-08-01

    This paper describes the static and free vibration behavior of single walled boron nitride nanotubes using a structural mechanics based finite element method. First, depending on the type of nanotube under investigation, its three dimensional nanostructure is developed according to the well-known corresponding positions of boron and nitride atoms as well as boron nitride bonds. Then, appropriate point masses are assigned to the atomic positions of the developed space frame. Next, these point masses are suitably interconnected with two-noded, linear, spring-like, finite elements. In order to simulate effectively the interactions observed between boron and nitride atoms within the nanotube, appropriate potential energy functions are introduced for these finite elements. In this manner, various atomistic models for both armchair and zigzag nanotubes with different aspect ratios are numerically analyzed and their effective elastic modulus as well as their natural frequencies and corresponding mode shapes are obtained. Regarding the free vibration analysis, the computed results reveal bending, breathing and axial modes of vibration depending on the nanotube size and chirality as well as the applied boundary support conditions. The longitudinal stiffness of the boron nitride nanotubes is found also sensitive to their geometric characteristics.

  10. The Effects of Radial Compression on Thermal Conductivity of Carbon and Boron Nitride Nanotubes

    OpenAIRE

    Haijun Shen

    2012-01-01

    By using molecular dynamics method, thermal conductivity of (10, 10) carbon and boron nitride (BN) nanotubes under radial compression was investigated, and the - (thermal conductivity versus temperature) curves of the two nanotubes were obtained. It is found that with the increase of temperature the thermal conductivity of two nanotubes decreases; the nanotubes, under both the local compression and whole compression, have lower thermal conductivity, and the larger the compressive deformat...

  11. Radial elasticity of multi-walled boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Michael W. Smith, Cheol Park, Meng Zheng, Changhong Ke ,In-Tae Bae, Kevin Jordan

    2012-02-01

    We investigated the radial mechanical properties of multi-walled boron nitride nanotubes (MW-BNNTs) using atomic force microscopy. The employed MW-BNNTs were synthesized using pressurized vapor/condenser (PVC) methods and were dispersed in aqueous solution using ultrasonication methods with the aid of ionic surfactants. Our nanomechanical measurements reveal the elastic deformational behaviors of individual BNNTs with two to four tube walls in their transverse directions. Their effective radial elastic moduli were obtained through interpreting their measured radial deformation profiles using Hertzian contact mechanics models. Our results capture the dependences of the effective radial moduli of MW-BNNTs on both the tube outer diameter and the number of tube layers. The effective radial moduli of double-walled BNNTs are found to be several-fold higher than those of single-walled BNNTs within the same diameter range. Our work contributes directly to a complete understanding of the fundamental structural and mechanical properties of BNNTs and the pursuits of their novel structural and electronics applications.

  12. Mechanical deformations of boron nitride nanotubes in crossed junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong, E-mail: cke@binghamton.edu [Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, New York 13902 (United States); Park, Cheol [NASA Langley Research Center, Hampton, Virginia 23681 (United States); Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Fay, Catharine C. [NASA Langley Research Center, Hampton, Virginia 23681 (United States); Stupkiewicz, Stanislaw [Institute of Fundamental Technological Research, Warsaw (Poland)

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67 nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07 ± 0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  13. Integrated Rig for the Production of Boron Nitride Nanotubes via the Pressurized Vapor-Condenser Method

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor)

    2014-01-01

    An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

  14. Thermodynamic approach to boron nitride nanotube solubility and dispersion

    Science.gov (United States)

    Tiano, A. L.; Gibbons, L.; Tsui, M.; Applin, S. I.; Silva, R.; Park, C.; Fay, C. C.

    2016-02-01

    Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to improve dispersion include surface functionalization, surfactants, polymer wrapping, and sonication. Although these approaches have proven effective, they often achieve dispersion by altering the surface or structure of the nanomaterial and ultimately, their intrinsic properties. Co-solvents are commonly utilized in the polymer, paint, and art conservation industries to selectively dissolve materials. These co-solvents are utilized based on thermodynamic interaction parameters and are chosen so that the original materials are not affected. The same concept was applied to enhance the dispersion of boron nitride nanotubes (BNNTs) to facilitate the fabrication of BNNT nanocomposites. Of the solvents tested, dimethylacetamide (DMAc) exhibited the most stable, uniform dispersion of BNNTs, followed by N,N-dimethylformamide (DMF), acetone, and N-methyl-2-pyrrolidone (NMP). Utilizing the known Hansen solubility parameters of these solvents in comparison to the BNNT dispersion state, a region of good solubility was proposed. This solubility region was used to identify co-solvent systems that led to improved BNNT dispersion in poor solvents such as toluene, hexane, and ethanol. Incorporating the data from the co-solvent studies further refined the proposed solubility region. From this region, the Hansen solubility parameters for BNNTs are thought to lie at the midpoint of the solubility sphere: 16.8, 10.7, and 9.0 MPa1/2 for δd, δp, and δh, respectively, with a calculated Hildebrand parameter of 21.8 MPa1/2.Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to

  15. Boron nitride nanotubes functionalized with mesoporous silica for intracellular delivery of chemotherapy drugs.

    Science.gov (United States)

    Li, Xia; Zhi, Chunyi; Hanagata, Nobutaka; Yamaguchi, Maho; Bando, Yoshio; Golberg, Dmitri

    2013-08-25

    Boron nitride nanotube (BNNT)@mesoporous silica hybrids with controllable surface zeta potential were fabricated for intracellular delivery of doxorubicin. The materials showed higher suspension ability, doxorubicin intracellular endocytosis efficiency, and LNcap prostate cancer cell killing ability compared with naked BNNTs.

  16. Quantifying the Solubility of Boron Nitride Nanotubes and Sheets with Static Light Scattering and Refractometry

    Energy Technology Data Exchange (ETDEWEB)

    Mutz, M [The University of Tennessee; Eastwood, Eric Allen [ORNL; Dadmun, Mark D [ORNL

    2013-01-01

    The dissolution of nanoparticles, particularly those containing boron, is an important area of interest for polymer nanocomposite formation and material development. In this work, the solubility of boron nitride nanotubes (BNNT), functionalized boron nitride nanotubes (FBNNT), and boron nitride sheets (BNZG) is quantified in toluene and THF with static light scattering, refractometry, UV vis spectroscopy, and physical observations. UV vis spectroscopy provides a method to determine the concentration and solubility limits of the solutions tested. Using light scattering, the second virial coefficient, A2, is determined and used to calculate , the solute solvent interaction parameter. The Hildebrand solubility parameter, , is then extracted from this data using the Hildebrand Scatchard Solution Theory. A list of potential good solvents based on the estimated value is provided for each nanoparticle. Single-walled carbon nanotubes (SWNTs) and prepolymers (EN4 and EN8) used to synthesize polyurethanes were also tested, because the published and molar attraction constants of these materials provided a selfconsistent check. The dn/dc of SWNTs and boron-containing particles was measured for the first time in this work. A solvent screen for BN-ZG provides additional information that supports the obtained and . Three systems were found to have values below 0.5 and were thermodynamically soluble: BNNT in THF, EN8 in THF, and EN8 in toluene.

  17. Simulation of STM technique for electron transport through boron-nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ganji, M.D. [Department of Chemistry, Azad University, Ghaemshahr Branch, Mazandaran (Iran, Islamic Republic of)], E-mail: ganji_md@yahoo.com; Mohammadi-nejad, A. [Department of Computer Engineering, Olom Fonon University of Mazandaran, Babol (Iran, Islamic Republic of)

    2008-06-30

    We report first-principles calculations on the electrical transport properties of boron-nitrid nanotubes (BNNTs). We consider a single walled (5,0) boron-nitrid nanotube sandwiched between an Au(1 0 0) substrate and a monatomic Au scanning tunneling microscope (STM) tip. Lateral motion of the tip over the nanotube wall cause it to change from one conformation class to the others and to switch between a strongly and a weakly conducting state. Thus, surprisingly, despite their apparent simplicity these Au/BNNT/Au nanowires are shown to be a convenient switch. Experiments with a conventional STM are proposed to test these predictions. The projection of the density of states (PDOS) and the transmission coefficients T(E) of the two-probe systems at zero bias are analyzed, and it suggests that the variation of the coupling between the wire and the electrodes leads to switching behaviour.

  18. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation

    Energy Technology Data Exchange (ETDEWEB)

    Roosta, Sara [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Hashemianzadeh, Seyed Majid, E-mail: hashemianzadeh@iust.ac.ir [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Ketabi, Sepideh, E-mail: sepidehketabi@yahoo.com [Department of Chemistry, East Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were − 4.128 kcal mol{sup −1} and − 2457.124 kcal mol{sup −1} respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was − 281.937 kcal mol{sup −1} which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (− 374.082 and − 245.766 kcal mol{sup −1}) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. - Highlights: • Solubility of cisplatin@ boron-nitride nanotube is larger than cisplatin@ carbon nanotube. • Boron- nitride nanotube complexes have larger electrostatic contribution in solvation free energy. • Complexation free energies confirm encapsulation of drug into the nanotubes in aqueous solution. • Boron- nitride nanotubes are appropriate drug delivery systems compared with carbon nanotubes.

  19. The effect of temperature on the compressive buckling of boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Shokuhfar, Ali; Ebrahimi-Nejad, Salman [Faculty of Mechanical Engineering, K.N. Toosi University of Technology, 19991-43344 Tehran (Iran, Islamic Republic of); Hosseini-Sadegh, Amin [Faculty of Petroleum Engineering, Petroleum University of Technology, 14539-53153 Tehran (Iran, Islamic Republic of); Zare-Shahabadi, Abolfazl [Department of Mechanical Engineering, Yazd Branch, Islamic Azad University, Yazd (Iran, Islamic Republic of)

    2012-07-15

    Inspired by the stability at high temperature and the high mechanical strength of boron nitride nanotubes (BNNTs), the effect of temperature on the compressive buckling of BNNTs has been investigated in this paper. Molecular dynamics (MD) simulations of BNNTs subjected to high temperatures (up to 3000 K) were performed and their structures were analyzed by studying their optimized structures at different temperatures through the radial distribution function (RDF). Then, the structural stability and compressive resistance properties of these nanotubes were investigated and the critical buckling loads and critical buckling strains of the nanotubes and their susceptibility to high temperatures were determined. The gradual decrease in the sharpness of the peaks of RDF plots of non-loaded nanotubes implies that at higher temperatures the structure displays greater deviations from that at room temperature. Results of buckling simulations also indicate a general weakening of the nanotubes and lower critical buckling loads and critical buckling strains at increased temperatures. The decrease in the critical buckling load is more significant for the longer nanotube (L {proportional_to} 6 nm) than the shorter one (L {proportional_to} 3 nm). The critical buckling strain experienced a drop of about 35-50% at temperatures higher than 1500 K. A transitional behavior was observed between T = 1000 and 2000 K. Temperature-dependent axial buckling behavior of boron nitride nanotubes. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction*

    Institute of Scientific and Technical Information of China (English)

    Song Jiuxu; Yang Yintang; Liu Hongxia; Guo Lixin

    2011-01-01

    Using the method combined non-equilibrium Green's function with density functional theory, the electronic transport properties of an (8, 0) carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated. In the current voltage characteristic of the heterojunction, negative differential resistance was found under positive and negative bias, which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage These results are meaningful to modeling and simulating on related electronic devices.

  1. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  2. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation.

    Science.gov (United States)

    Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were -4.128kcalmol(-1) and -2457.124kcalmol(-1) respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was -281.937kcalmol(-1) which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (-374.082 and -245.766kcalmol(-1)) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution.

  3. High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

    Science.gov (United States)

    Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Lowther, Sharon E. (Inventor); Bryant, Robert George (Inventor)

    2015-01-01

    Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

  4. Interlayer locking and atomic-scale friction in commensurate small-diameter boron nitride nanotubes

    Science.gov (United States)

    Shin, Homin; Kim, Keun Su; Simard, Benoit; Klug, Dennis D.

    2017-02-01

    Density functional theory applied to small-diameter boron nitride nanotubes (BNNTs) finds out-of-plane structural buckling in contrast to large-diameter tubes that exhibit faceting. Buckling significantly affects interlayer interactions in commensurate double-walled BNNTs. Energy corrugation amplitudes in relative motions of BNNT walls change up to fourfold, depending on interlayer registry relaxation, in marked contrast to carbon nanotubes. Large differences between relaxed and unrelaxed energy corrugations of BNNTs could yield energy dissipation via the strain-induced anelastic relaxation of interlayer locking (or "lattice kinks"), which can be exploited for mechanical damping applications.

  5. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  6. 机械法合成BN纳米管%Mechanosynthesis of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    籍凤秋; 曹传宝; 徐红; 杨子光

    2006-01-01

    Boron nitride nanotubes (BN-NTs) with pure hexagonal BN phase have been synthesized by heating ball-milled boron powders in flowing ammonia gas at a temperature of 1200℃. The as-synthesized products were characterized by X-ray powder diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and electron energy loss spectroscopy (EELS). The diameters of nanotubes are in the rage of 40120nm and the lengths are more than 10μm. EELS result identifies that the ratio of boron and nitrogen is almost 1:1. The growth temperature is a crucial growth parameter in controlling the structure and crystalline of BN-NTs. The nanotubes grown at 1100℃ possesses of a bamboo-like structure, while as the temperature increased to 1200℃, most of the nanotubes exhibited a cylindrical structure. In addition, changing the heating time can control the size of the nanotubes. The gas atmosphere has influence on the yield of BN-NTs during heating process. When heating atmosphere was replaced by nitrogen, the yield of nanotubes was remarkably decreased.

  7. Very long single- and few-walled boron nitride nanotubes via the pressurized vapor/condenser method

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Michael W. [NASA Langley Research Center, Hampton, VA (United States); Jordan, Kevin C. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Park, Cheol [NASA Langley Research Center, Hampton, VA (United States); Kim, Jae-Woo [NASA Langley Research Center, Hampton, VA (United States); Lillehei, Peter T. [NASA Langley Research Center, Hampton, VA (United States); Crooks, Roy [NASA Langley Research Center, Hampton, VA (United States); Harrison, Joycelyn S. [NASA Langley Research Center, Hampton, VA (United States)

    2009-11-01

    Boron nitride nanotubes (BNNTs) are desired for their exceptional mechanical, electronic, thermal, structural, textural, optical, and quantum properties. A new method for producing long, small-diameter, single- and few-walled, boron nitride nanotubes (BNNTs) in macroscopic quantities is reported. The pressurized vapor/condenser (PVC) method produces, without catalysts, highly crystalline, very long, small-diameter, BNNTs. Palm-sized, cotton-like masses of BNNT raw material were grown by this technique and spun directly into centimeters-long yarn. Nanotube lengths were observed to be 100 times that of those grown by the most closely related method. Self-assembly and growth models for these long BNNTs are discussed.

  8. Method and device to synthesize boron nitride nanotubes and related nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.

    2016-07-19

    Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

  9. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

    Science.gov (United States)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

    2016-01-01

    It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

  10. Giant osmotic energy conversion measured in a single transmembrane boron nitride nanotube.

    Science.gov (United States)

    Siria, Alessandro; Poncharal, Philippe; Biance, Anne-Laure; Fulcrand, Rémy; Blase, Xavier; Purcell, Stephen T; Bocquet, Lydéric

    2013-02-28

    New models of fluid transport are expected to emerge from the confinement of liquids at the nanoscale, with potential applications in ultrafiltration, desalination and energy conversion. Nevertheless, advancing our fundamental understanding of fluid transport on the smallest scales requires mass and ion dynamics to be ultimately characterized across an individual channel to avoid averaging over many pores. A major challenge for nanofluidics thus lies in building distinct and well-controlled nanochannels, amenable to the systematic exploration of their properties. Here we describe the fabrication and use of a hierarchical nanofluidic device made of a boron nitride nanotube that pierces an ultrathin membrane and connects two fluid reservoirs. Such a transmembrane geometry allows the detailed study of fluidic transport through a single nanotube under diverse forces, including electric fields, pressure drops and chemical gradients. Using this device, we discover very large, osmotically induced electric currents generated by salinity gradients, exceeding by two orders of magnitude their pressure-driven counterpart. We show that this result originates in the anomalously high surface charge carried by the nanotube's internal surface in water at large pH, which we independently quantify in conductance measurements. The nano-assembly route using nanostructures as building blocks opens the way to studying fluid, ionic and molecule transport on the nanoscale, and may lead to biomimetic functionalities. Our results furthermore suggest that boron nitride nanotubes could be used as membranes for osmotic power harvesting under salinity gradients.

  11. Synthesis and characterization of boron nitrides nanotubes; Sintese e caracterizacao de nanotubos de nitreto de boro

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, T.H.; Sousa, E.M.B. [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil). Servico de Nanotecnologia

    2010-07-01

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  12. Modeling of Laser Vaporization and Plume Chemistry in a Boron Nitride Nanotube Production Rig

    Science.gov (United States)

    Gnoffo, Peter A.; Fay, Catharine C.

    2012-01-01

    Flow in a pressurized, vapor condensation (PVC) boron nitride nanotube (BNNT) production rig is modeled. A laser provides a thermal energy source to the tip of a boron ber bundle in a high pressure nitrogen chamber causing a plume of boron-rich gas to rise. The buoyancy driven flow is modeled as a mixture of thermally perfect gases (B, B2, N, N2, BN) in either thermochemical equilibrium or chemical nonequilibrium assuming steady-state melt and vaporization from a 1 mm radius spot at the axis of an axisymmetric chamber. The simulation is intended to define the macroscopic thermochemical environment from which boron-rich species, including nanotubes, condense out of the plume. Simulations indicate a high temperature environment (T > 4400K) for elevated pressures within 1 mm of the surface sufficient to dissociate molecular nitrogen and form BN at the base of the plume. Modifications to Program LAURA, a finite-volume based solver for hypersonic flows including coupled radiation and ablation, are described to enable this simulation. Simulations indicate that high pressure synthesis conditions enable formation of BN vapor in the plume that may serve to enhance formation of exceptionally long nanotubes in the PVC process.

  13. Boron nitride nanotubes for boron neutron capture therapy as contrast agents in magnetic resonance imaging at 3 T

    Energy Technology Data Exchange (ETDEWEB)

    Menichetti, L., E-mail: luca.menichetti@ifc.cnr.it [CNR-National Research Council of Italy, Institute of Clinical Physiology, via G. Moruzzi 1, 56124 Pisa (Italy); De Marchi, D. [Fondazione Toscana Gabriele Monasterio per la Ricerca Medica e la Sanita Pubblica, CNR-Regione Toscana, via Trieste 41, 56126 Pisa (Italy); Calucci, L. [CNR-National Research Council of Italy, ICCOM-Institute of OrganoMetallic Chemistry, via G. Moruzzi 1, 56124 Pisa (Italy); Ciofani, G.; Menciassi, A. [Italian Institute of Technology c/o Scuola Superiore Sant' Anna, viale R. Piaggio 34, 56025 Pontedera (Italy); Forte, C. [CNR-National Research Council of Italy, ICCOM-Institute of OrganoMetallic Chemistry, via G. Moruzzi 1, 56124 Pisa (Italy)

    2011-12-15

    The applicability of boron nitride nanotubes (BNNTs) containing Fe paramagnetic impurities as contrast agents in magnetic resonance imaging (MRI) was investigated. The measurement of longitudinal and transverse relaxation times of water protons in homogeneous aqueous dispersions of BNNTs wrapped with poly(L-lysine) at different concentrations allowed longitudinal (r{sub 1}) and transverse (r{sub 2}) relaxivities to be determined at 3 T. The r{sub 2} value was comparable to those of commercial superparamagnetic iron oxide nanoparticles, indicating that Fe-containing BNNTs have the potential to be used as T{sub 2} contrast-enhancement agents in MRI at 3 T.

  14. Electronic structures of an (8, 0) boron nitride/carbon nanotube heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hongxia; Zhang Heming; Song Jiuxu [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Zhang Zhiyong, E-mail: liuhongxia_xidian@126.co [Information Science and Technology Institution, Northwest University, Xi' an 710069 (China)

    2010-01-15

    The electronic structure of the heterojunction is the foundation of the study on its working mechanism. Models of the heterojunctions formed by an (8, 0) boron nitride nanotube and an (8, 0) carbon nanotube with C-B or C-N interface have been established. The structures of the above heterojunctions were optimized with first-principle calculations based on density functional theory. The rearrangements of the heterojunctions concentrate mainly on their interfaces. The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the heterojunctions distribute in the carbon nanotube section. As the band offsets of the above heterojunctions are achieved with the average bond energy method, the band structure is plotted. (semiconductor materials)

  15. Boron nitride nanotube-mediated stimulation of cell co-culture on micro-engineered hydrogels.

    Directory of Open Access Journals (Sweden)

    Leonardo Ricotti

    Full Text Available In this paper, we describe the effects of the combination of topographical, mechanical, chemical and intracellular electrical stimuli on a co-culture of fibroblasts and skeletal muscle cells. The co-culture was anisotropically grown onto an engineered micro-grooved (10 µm-wide grooves polyacrylamide substrate, showing a precisely tuned Young's modulus (∼ 14 kPa and a small thickness (∼ 12 µm. We enhanced the co-culture properties through intracellular stimulation produced by piezoelectric nanostructures (i.e., boron nitride nanotubes activated by ultrasounds, thus exploiting the ability of boron nitride nanotubes to convert outer mechanical waves (such as ultrasounds in intracellular electrical stimuli, by exploiting the direct piezoelectric effect. We demonstrated that nanotubes were internalized by muscle cells and localized in both early and late endosomes, while they were not internalized by the underneath fibroblast layer. Muscle cell differentiation benefited from the synergic combination of topographical, mechanical, chemical and nanoparticle-based stimuli, showing good myotube development and alignment towards a preferential direction, as well as high expression of genes encoding key proteins for muscle contraction (i.e., actin and myosin. We also clarified the possible role of fibroblasts in this process, highlighting their response to the above mentioned physical stimuli in terms of gene expression and cytokine production. Finally, calcium imaging-based experiments demonstrated a higher functionality of the stimulated co-cultures.

  16. Effect of reaction time on the characteristics of catalytically grown boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Norani Muti, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: pervaiz-pas@yahoo.com, E-mail: shuaib-penang@yahoo.com, E-mail: zainabh@petronas.com.my; Ahmad, Pervaiz, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: pervaiz-pas@yahoo.com, E-mail: shuaib-penang@yahoo.com, E-mail: zainabh@petronas.com.my; Saheed, Mohamed Shuaib Mohamed, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: pervaiz-pas@yahoo.com, E-mail: shuaib-penang@yahoo.com, E-mail: zainabh@petronas.com.my; Burhanudin, Zainal Arif, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: pervaiz-pas@yahoo.com, E-mail: shuaib-penang@yahoo.com, E-mail: zainabh@petronas.com.my [Center of Innovative Nanostructures and Nanodevices (COINN), Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750, Tronoh, Perak (Malaysia)

    2014-10-24

    The paper reports on the growth of boron nitride nanotube (BNNTs) on Si substrate by catalytic chemical vapor deposition technique and the effect of reaction time and temperature on the size and purity were investigated. Scanning electron microscopy image revealed the bamboo-like BNNTs of multiwalled type with interlayer spacing of 0.34 nm. EDX analysis described the presence of a small percentage of Mg in the sample, indicating the combination of base-tip growth model for the sample synthesized at 1200°C. The reaction time has an effect of extending the length of the BNNTs until the catalyst is oxidized or covered by growth precursor.

  17. Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Song Jiuxu; Yang Yintang; Liu Hongxia [Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Guo Lixin, E-mail: songjiuxu@126.com [School of Science, Xidian University, Xi' an 710071 (China)

    2011-04-15

    Using the method combined non-equilibrium Green's function with density functional theory, the electronic transport properties of an (8, 0) carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated. In the current voltage characteristic of the heterojunction, negative differential resistance was found under positive and negative bias, which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage. These results are meaningful to modeling and simulating on related electronic devices. (semiconductor physics)

  18. Boron Nitride Nanotubes: Recent Advances in Their Synthesis, Functionalization, and Applications

    Directory of Open Access Journals (Sweden)

    Chee Huei Lee

    2016-07-01

    Full Text Available A comprehensive overview of current research progress on boron nitride nanotubes (BNNTs is presented in this article. Particularly, recent advancements in controlled synthesis and large-scale production of BNNTs will first be summarized. While recent success in mass production of BNNTs has opened up new opportunities to implement the appealing properties in various applications, concerns about product purity and quality still remain. Secondly, we will summarize the progress in functionalization of BNNTs, which is the necessary step for their applications. Additionally, selected potential applications in structural composites and biomedicine will be highlighted.

  19. Plasma Spray Synthesis of High Purity Boron Nitride Nanotubes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Compared with carbon nanotubes, BNNT's possess better mechanical properties and are thermally stable to much higher temperatures. The potential benefits of...

  20. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  1. Boron nitride nanotube-enhanced osteogenic differentiation of mesenchymal stem cells.

    Science.gov (United States)

    Li, Xia; Wang, Xiupeng; Jiang, Xiangfen; Yamaguchi, Maho; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2016-02-01

    The interaction between boron nitride nanotubes (BNNTs) layer and mesenchymal stem cells (MSCs) is evaluated for the first time in this study. BNNTs layer supports the attachment and growth of MSCs and exhibits good biocompatibility with MSCs. BNNTs show high protein adsorption ability, promote the proliferation of MSCs and increase the secretion of total protein by MSCs. Especially, BNNTs enhance the alkaline phosphatase (ALP) activity as an early marker of osteoblasts, ALP/total protein and osteocalcin (OCN) as a late marker of osteogenic differentiation, which shows that BNNTs can enhance osteogenesis of MSCs. The release of trace boron and the stress on cells exerted by BNNTs with a fiber structure may account for the enhanced differentiation of MSCs into osteoblasts. Therefore BNNTs are potentially useful for bone regeneration in orthopedic applications.

  2. Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

    Science.gov (United States)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and carbon doped zigzag and armchair Boron Nitride Nanotubes (BNNTs) have been investigated based on tight binding formalism. It was found that the band gap is reduced due to substitution of Boron or Nitrogen atoms by carbon atoms and the doping effects of B- and N-substituted BNNTs are different. The applied electric field converts the carbon doped BNNTs from semiconductor to metal. The gap energy reduction shows an identical dependence to electric field and doping for both armchair and zigzag carbon doped BNNTs. Our results indicate that the band gap of carbon doped BNNTs is a function of the Impurity concentration, electric field strength and the direction between the electric field and dopant location. The band gap for C-doped BNNTs with four carbon atoms decreases linearly but for two carbon atoms, it is constant at first then decreases linearly.

  3. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  4. Scalable manufacturing of boron nitride nanotubes and their assemblies: a review

    Science.gov (United States)

    Kim, Keun Su; Jong Kim, Myung; Park, Cheol; Fay, Catharine C.; Chu, Sang-Hyon; Kingston, Christopher T.; Simard, Benoit

    2017-01-01

    Boron nitride nanotubes (BNNTs) are wide bandgap semiconducting materials with a quasiparticle energy gap larger than 6.0 eV. Since their first synthesis in 1995, there have been considerable attempts to develop novel BNNT-based applications in semiconductor science and technology. Inspired by carbon nanotube synthesis methods, many BNNT synthesis methods have been developed so far; however, it has been very challenging to produce BNNTs at a large scale with the structural quality high enough for exploring practical applications. Very recently there has been significant progress in the scalable manufacturing of high-quality BNNTs. In this article, we will review those particular breakthroughs and discuss their impact on semiconductor industries. Freestanding BNNT assemblies such as transparent thin films, yarns or buckypapers are highly advantageous in the development of novel BNNT-based semiconductor devices. The latest achievements in their manufacturing processes will be also presented along with their potential applications.

  5. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ram Sevak, E-mail: singh915@gmail.com [Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana) (India)

    2015-11-15

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  6. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Directory of Open Access Journals (Sweden)

    Ram Sevak Singh

    2015-11-01

    Full Text Available Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0, armchair (3, 3, and chiral (4, 2 structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  7. Superior Current Carrying Capacity of Boron Nitride Encapsulated Carbon Nanotubes with Zero-Dimensional Contacts.

    Science.gov (United States)

    Huang, Jhao-Wun; Pan, Cheng; Tran, Son; Cheng, Bin; Watanabe, Kenji; Taniguchi, Takashi; Lau, Chun Ning; Bockrath, Marc

    2015-10-14

    We report fabrication and characterization of hexagonal boron nitride (hBN)-encapsulated carbon nanotube (CNT) field effect transistors, which are coupled to electrical leads via zero-dimensional contacts. Device quality is attested by the ohmic contacts and observation of Coulomb blockade with a single periodicity in small bandgap semiconducing nanotubes. Surprisingly, hBN-encapsulated CNT devices demonstrate significantly enhanced current carrying capacity; a single-walled CNT can sustain >180 μA current or, equivalently, a current density of ∼2 × 10(10) A/cm(2), which is a factor of 6-7 higher than devices supported on SiO2 substrates. Such dramatic enhancement of current carrying capacity arises from the high thermal conductivity of hBN and lower hBN-CNT interfacial thermal resistance and has implications for carbon electronic applications.

  8. In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

    2011-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  9. Towards thermoconductive, electrically insulating polymeric composites with boron nitride nanotubes as fillers

    Energy Technology Data Exchange (ETDEWEB)

    Zhi, Chunyi; Bando, Yoshio; Terao, Takeshi; Tang, Chengchun; Golberg, Dimitri [World Premier International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Kuwahara, Hiroaki [Innovation Research Institute, Teijin Ltd. 2-1, Hinode-cho, Iwakuni, Yamaguchi 740-8511 (Japan)

    2009-06-23

    Utilizing boron nitride nanotubes (BNNTs) as fillers, composites are fabricated with poly(methyl methacrylate), polystyrene, poly(vinyl butyral), or poly(ethylene vinyl alcohol) as the matrix and their thermal, electrical, and mechanical properties are evaluated. More than 20-fold thermal conductivity improvement in BNNT-containing polymers is obtained, and such composites maintain good electrical insulation. The coefficient of thermal expansion (CTE) of the BNNT-loaded polymers is dramatically reduced because of interactions between the polymer chains and the nanotubes. Moreover, the composites possess good mechanical properties, as revealed by Vickers microhardness tests. This detailed study indicates that BNNTs are very promising nanofillers for polymeric composites, allowing the simultaneous achievement of high thermal conductivity, low CTE, and high electrical resistance, as required for novel and efficient heat-releasing materials. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  10. Theoretical studies of urea adsorption on single wall boron-nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chermahini, Alireza Najafi, E-mail: anajafi@cc.iut.ac.ir [Department of Chemistry, Isfahan University of Technology, Isfahan, 841543111, Islamic Republic of Iran (Iran, Islamic Republic of); Teimouri, Abbas [Chemistry Department, Payame Noor University, 19395-4697, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Farrokhpour, Hossein [Department of Chemistry, Isfahan University of Technology, Isfahan, 841543111, Islamic Republic of Iran (Iran, Islamic Republic of)

    2014-11-30

    Graphical abstract: - Highlights: • DFT base investigations of urea molecule with various type of armchair BNNTs studied. • The adsorption of urea molecule is observed to be exothermic and physical in nature. • The most effective interaction occurs when urea located inside of BNNTs. • The electronic analysis indicated ΔE{sub g} values changed after urea adsorption. - Abstract: Surface modification of a boron nitride nanotube (BNNT) with urea molecule was investigated in terms of its energetic, geometric, and electronic properties using B3LYP and PW91 density functionals. In this investigation, various armchair (n,n) nanotubes, where n = 5, 6, 7 have been used. Two different interaction modes, including interaction with outer layer and inner layer of tube were studied. The results indicated that the adsorption of single urea molecule in all of its configurations is observed to be exothermic and physical in nature. Interestingly, the adsorption energy for the most stable configuration of urea was observed when the molecule located inside of the nanotube. Besides, the adsorption of urea on BNNTs changes the conductivity of nanotube.

  11. Catalytic growth of vertically aligned neutron sensitive {sup 10}Boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Pervaiz, E-mail: pervaizahmad@siswa.um.edu.my, E-mail: Pervaiz-pas@yahoo.com; Khandaker, Mayeen Uddin, E-mail: mu-khandaker@yahoo.com, E-mail: mu-khandaker@um.edu.my; Amin, Yusoff Mohd [University of Malaya, Department of Physics, Faculty of Science (Malaysia); Khan, Ghulamullah [University of Malaya, Department of Mechanical Engineering (Malaysia); Ramay, Shahid M. [King Saud University, Department of Physics and Astronomy, College of Science (Saudi Arabia); Mahmood, Asif [King Saud University, Department of Chemical Engineering, College of Engineering (Saudi Arabia); Amin, Muhammad [University of the Punjab, Department of Physics (Pakistan); Muhammad, Nawshad [Interdisciplinary Research Centre in Biomedical Materials (IRCBM) COMSATS Institute of Information Technology (Pakistan)

    2016-01-15

    {sup 10}Boron nitride nanotubes ({sup 10}BNNTs) are a potential neutron sensing element in a solid-state neutron detector. The aligned {sup 10}BNNT can be used for its potential application without any further purification. Argon-supported thermal CVD is used to achieve vertically aligned {sup 10}BNNT with the help of nucleation sites produced in a thin layer of magnesium–iron alloy deposited at the top of Si substrate. FESEM shows vertically aligned {sup 10}BNNTs with ball-like catalytic tips at top. EDX reveals magnesium (Mg) contents in the tips that refer to catalytic growth of {sup 10}BNNT. HR-TEM shows tubular morphology of the synthesized {sup 10}BNNT with lattice fringes on its outer part having an interlayer spacing of ∼0.34 nm. XPS shows B 1 s and N 1 s peaks at 190.5 and 398 eV that correspond to hexagonal {sup 10}Boron nitride ({sup 10}h-BN) nature of the synthesized {sup 10}BNNT, whereas the Mg kll auger peaks at ∼301 and ∼311 eV represents Mg contents in the sample. Raman spectrum has a peak at 1390 (cm{sup −1}) that corresponds to E{sub 2g} mode of vibration in {sup 10}h-BN.

  12. High-Speed Imaging Optical Pyrometry for Study of Boron Nitride Nanotube Generation

    Science.gov (United States)

    Inman, Jennifer A.; Danehy, Paul M.; Jones, Stephen B.; Lee, Joseph W.

    2014-01-01

    A high-speed imaging optical pyrometry system is designed for making in-situ measurements of boron temperature during the boron nitride nanotube synthesis process. Spectrometer measurements show molten boron emission to be essentially graybody in nature, lacking spectral emission fine structure over the visible range of the electromagnetic spectrum. Camera calibration experiments are performed and compared with theoretical calculations to quantitatively establish the relationship between observed signal intensity and temperature. The one-color pyrometry technique described herein involves measuring temperature based upon the absolute signal intensity observed through a narrowband spectral filter, while the two-color technique uses the ratio of the signals through two spectrally separated filters. The present study calibrated both the one- and two-color techniques at temperatures between 1,173 K and 1,591 K using a pco.dimax HD CMOS-based camera along with three such filters having transmission peaks near 550 nm, 632.8 nm, and 800 nm.

  13. Boron nitride nanotubes included thermally cross-linked gelatin-glucose scaffolds show improved properties.

    Science.gov (United States)

    Şen, Özlem; Culha, Mustafa

    2016-02-01

    Boron nitride nanotubes (BNNTs) are increasingly investigated for their medical and biomedical applications due to their unique properties such as resistance to oxidation, thermal and electrical insulation, and biocompatibility. BNNTs can be used to enhance mechanical strength of biomedical structures such as scaffolds in tissue engineering applications. In this study, we report the use of BNNTs and hydroxylated BNNTs (BNNT-OH) to improve the properties of gelatin-glucose scaffolds prepared with electrospinning technique. Human dermal fibroblast (HDF) cells are used for the toxicity assessment and cell seeding studies. It is found that the addition of BNNTs into the scaffold does not influence cell viability, decreases the scaffold degradation rate, and improves cell attachment and proliferation compared to only-gelatin scaffold.

  14. Boron Nitride Coated Carbon Nanotube Arrays with Enhanced Compressive Mechanical Property

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Tan, Dunlin; Zhang, Bowei; Tok, Alfred Iing Yoong; Teo, Edwin Hang Tong

    Vertically aligned carbon nanotube (CNT) array is one of the most promising energy dissipating materials due to its excellent temperature invariant mechanical property. However, the CNT arrays with desirable recoverability after compression is still a challenge. Here, we report on the mechanical enhancement of the CNT arrays reinforced by coating with boron nitride (BN) layers. These BN coated CNT (BN/CNT) arrays exhibit excellent compressive strength and recoverability as compared to those of the as-prepared CNT arrays which totally collapsed after compression. In addition, the BN coating also provides better resistance to oxidation due to its intrinsic thermal stability. This work presented here opens a new pathway towards tuning mechanical behavior of any arbitrary CNT arrays for promising potential such as damper, vibration isolator and shock absorber applications.

  15. A density functional theory study on parameters fitting of ultra long armchair (n,n)single walled boron nitride nanotubes

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Li; Zhang Jun-Ping; Su Ke-He; Wang Xin; Liu Yan; Sun Xu

    2012-01-01

    Armchair (n,n) single walled boron nitride nanotubes with n=2-17 are studied by the density functional theory at the B3LYP/3-21G(d) level combined with the periodic boundary conditions for simulating the ultra long model.The results show that the structure parameters and the formation energies bear a strong relationship to n.The fitted analytical equations are developed with correlation coefficients larger than 0.999.The energy gaps of (2,2) and (3,3)tubes are indirect gaps,and the larger tubes (n=4-17) have direct energy gaps.Results show that the armchair boron nitride nanotubes (n=2-17) are insulators with wide energy gaps of between 5.93 eV and 6.23 eV.

  16. Suitability of Boron-Nitride Single-Walled Nanotubes as Fluid-Flow Conduits in Nano-Valve Applications

    Science.gov (United States)

    2005-01-01

    Young’s modulus, EY, of carbon and boron-nitride SWNTs, the strain energy curves, Estr , displayed in Fig. 4(a) and (b) up to the point of buckling are...next fitted to the following fractional relation: Estr ¼ pEYL r40 r41 8R2 (2) where r0 and r1 are the outer and inner radii of the nanotube, L the

  17. Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

    Science.gov (United States)

    Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

    2016-07-01

    Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

  18. Axially compressed buckling of an embedded boron nitride nanotube subjected to thermo-electro-mechanical loadings

    Science.gov (United States)

    Salehi-Khojin, Amin; Jalili, Nader

    2007-04-01

    Unlike widely-used carbon nanotubes, boron nitride nanotubes (BNNTs) have shown to possess stable semiconducting behavior and strong piezoelectricity. Such properties along with their outstanding mechanical properties and thermal conductivity, make BNNTs promising candidate reinforcement materials for a verity of applications especially nanoelectronic and nanophotonic devices. Motivated by these abilities, we aim to study the buckling behavior of BNNT-reinforced piezoelectric polymeric composites when subjected to combined electro-thermo-mechanical loadings. For this, the multi-walled structure of BNNT is considered as elastic media and a set of concentric cylindrical shell with van der Waals interaction between them. Using three-dimensional equilibrium equations, Donnell shell theory is utilized to show that the axially compressive resistance of BNNT varies with applying thermal and electrical loads. The effect of BNNT piezoelectric property on the buckling behavior of the composites is demonstrated. More specifically, it is shown that applying direct and reverse voltages to BNNT changes the buckling loads for any axial and circumferential wavenumbers. Such capability could be uniquely utilized when designing BNNT-reinforced composites.

  19. Theoretic Study on Dispersion Mechanism of Boron Nitride Nanotubes by Polynucleotides

    Science.gov (United States)

    Liang, Lijun; Hu, Wei; Zhang, Zhisen; Shen, Jia-Wei

    2016-12-01

    Due to the unique electrical and mechanical properties of boron nitride nanotubes (BNNT), BNNT has been a promising material for many potential applications, especially in biomedical field. Understanding the dispersion of BNNT in aqueous solution by biomolecules is essential for its use in biomedical applications. In this study, BNNT wrapped by polynucleotides in aqueous solution was investigated by molecular dynamics (MD) simulations. Our results demonstrated that the BNNT wrapped by polynucleotides could greatly hinder the aggregation of BNNTs and improve the dispersion of BNNTs in aqueous solution. Dispersion of BNNTs with the assistance of polynucleotides is greatly affected by the wrapping manner of polynucleotides on BNNT, which mainly depends on two factors: the type of polynucleotides and the radius of BNNT. The interaction between polynucleotides and BNNT(9, 9) is larger than that between polynucleotides and BNNT(5, 5), which leads to the fact that dispersion of BNNT(9, 9) is better than that of BNNT(5, 5) with the assistance of polynucleotides in aqueous solution. Our study revealed the molecular-level dispersion mechanism of BNNT with the assistance of polynucleotides in aqueous solution. It shades a light on the understanding of dispersion of single wall nanotubes by biomolecules.

  20. Radiolabeling and physicochemical characterization of boron nitride nanotubes functionalized with glycol chitosan polymer

    Energy Technology Data Exchange (ETDEWEB)

    Soares, Daniel Cristian Ferreira; Ferreira, Tiago Hilario; Ferreira, Carolina de Aguiar; Sousa, Edesia Martins Barros de, E-mail: sousaem@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG) Belo Horizonte, MG (Brazil). Lab. de Materiais Nanoestruturados para Bioaplicacoes; Cardoso, Valbert Nascimento, E-mail: cardosov@farmacia.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Fac. de Farmacia

    2011-07-01

    In the last years, some nanostructured systems has proposed as new drugs and radioisotopes delivery systems, aiming the diagnosis and treatment of many diseases, including the cancer. Among these systems, the Boron Nitride Nanotubes (BNNTs) showed adequate characteristics to be applied in biomedical area, due to its high stability and considerable biocompatibility. However, due to its hydrophobic characteristics, these applications are limited and its behavior in vivo (guinea pigs) is unexplored yet. Seeking to overcome this problems, in the present work, we functionalized the BNNTs (noncovalent wrapped) with glycol chitosan (GC), a biocompatible and stable polymer, in order to disperse it in water. The results showed that BNNTs were well dispersed in water with mean size and polydispersity index suitable to conduct biodistribution studies in mice. The nanostructures were physicochemical and morphologically characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Raman Spectroscopy. The results revealed that the functionalization process with glycol chitosan was obtained with successfully on BNNTs surface. Furthermore, we developed a radiolabeling protocol with {sup 99m}Tc radioisotope in functionalized BNNTs, aiming in future, to conduct image biodistribution studies in mice. The results revealed that the nanotubes were radiolabeled with radiochemical purity above of 90%, being considered suitable to scintigraphic image acquisition. (author)

  1. Elastic and Piezoelectric Properties of Boron Nitride Nanotube Composites. Part II; Finite Element Model

    Science.gov (United States)

    Kim, H. Alicia; Hardie, Robert; Yamakov, Vesselin; Park, Cheol

    2015-01-01

    This paper is the second part of a two-part series where the first part presents a molecular dynamics model of a single Boron Nitride Nanotube (BNNT) and this paper scales up to multiple BNNTs in a polymer matrix. This paper presents finite element (FE) models to investigate the effective elastic and piezoelectric properties of (BNNT) nanocomposites. The nanocomposites studied in this paper are thin films of polymer matrix with aligned co-planar BNNTs. The FE modelling approach provides a computationally efficient way to gain an understanding of the material properties. We examine several FE models to identify the most suitable models and investigate the effective properties with respect to the BNNT volume fraction and the number of nanotube walls. The FE models are constructed to represent aligned and randomly distributed BNNTs in a matrix of resin using 2D and 3D hollow and 3D filled cylinders. The homogenisation approach is employed to determine the overall elastic and piezoelectric constants for a range of volume fractions. These models are compared with an analytical model based on Mori-Tanaka formulation suitable for finite length cylindrical inclusions. The model applies to primarily single-wall BNNTs but is also extended to multi-wall BNNTs, for which preliminary results will be presented. Results from the Part 1 of this series can help to establish a constitutive relationship for input into the finite element model to enable the modeling of multiple BNNTs in a polymer matrix.

  2. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications. Part II

    Science.gov (United States)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.

    2016-01-01

    Boron nitride nanotubes (BNNTs) are more thermally and chemically compatible with metal- and ceramic-matrix composites than carbon nanotubes (CNTs). The lack of an abundant supply of defect-free, high-aspect-ratio BNNTs has hindered development as reinforcing agents in structural materials. Recent activities at the National Research Council - Canada (NRC-C) and the University of California - Berkeley (UC-B) have resulted in bulk synthesis of few-walled, small diameter BNNTs. Both processes employ induction plasma technology to create boron vapor and highly reactive nitrogen species at temperatures in excess of 8000 K. Subsequent recombination under controlled cooling conditions results in the formation of BNNTs at a rate of 20 g/hr and 35 g/hr, respectively. The end product tends to consist of tangled masses of fibril-, sheet-, and cotton candy-like materials, which accumulate within the processing equipment. The radio frequency plasma spray (RFPS) facility at NASA Langley (LaRC), developed for metallic materials deposition, has been re-tooled for in-situ synthesis of BNNTs. The NRC-C and UC-B facilities comprise a 60 kW RF torch, a reactor with a stove pipe geometry, and a filtration system. In contrast, the LaRC facility has a 100 kW torch mounted atop an expansive reaction chamber coupled with a cyclone separator. The intent is to take advantage of both the extra power and the equipment configuration to simultaneously produce and gather BNNTs in a macroscopic form amenable to structural material applications.

  3. Adsorption of diazinon and hinosan molecules on the iron-doped boron nitride nanotubes surface in gas phase and aqueous solution: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Farmanzadeh, Davood, E-mail: d.farmanzad@umz.ac.ir; Rezainejad, Hamid

    2016-02-28

    Graphical abstract: - Highlights: • Fe doping on boron nitride nanotubes increases their chemical reactivity. • The vdW interactions have a remarkable contribution of total adsorption energies. • FeNBNNTs is better adsorbent for adsorbing mentioned OPs especially hinosan. • Results can be helpful for planning an efficient nanofilter to remove OP pollutants. - Abstract: In this study, the geometric structures and electronic properties of two widely used organophosphorus pesticides, diazinon and hinosan, boron nitride nanotubes (BNNTs) and Fe doped boron nitride nanotubes (FeBNNTs) as adsorbents of these pesticides are studied by density functional theory calculation as well as dispersion correction by Grimme method. The results show that Fe doping in boron nitride nanotubes structures increases the potency of nanotubes to adsorb mentioned pesticides, especially when Fe atom located instead of N atom. Comparing the adsorption energies of diazinon on FeBNNTs with ones for hinosan demonstrate that the adsorption of hinosan is energetically more favorable by FeBNNTs. Assessment of adsorption energies in aqueous solution confirmed significant decrease in their values compared to ones in gaseous phase. However, the adsorption of diazinon and hinosan on both BNNTs and FeBNNTs are exothermic. So, BNNTs and FeBNNTs may be promising candidates as appropriate adsorbents for adsorbing diazinon and hinosan. Also, the results of calculations have revealed that van der Waals interaction energies are remarkably large in adsorption of diazinon and hinosan on all boron nitride nanotubes.

  4. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Qi-lin Xiong

    2015-10-01

    Full Text Available The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs, single-walled carbon nanotubes (SWCNTs, and their hybrid structures (SWBN-CNTs are investigated using molecular dynamics (MD simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs, including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X and the angles of bonds.

  5. Very Long Single and Few-Walled Boron Nitride Nanotubes via the Pressurized Vapor/Condenser Method

    Science.gov (United States)

    Smith, Michael W.; Jordan, Kevin C.; Park, Cheol; Kim, Jae-Woo; Lillehei, Peter T.; Crooks, Roy; Harrison, Joycelyn S.

    2009-01-01

    A new method for producing long, small diameter, single and few-walled, boron nitride nanotubes (BNNTs) in macroscopic quantities is reported. The pressurized vapor/condenser (PVC) method produces, without catalysts, highly crystalline, very long, small diameter, BNNTs. Palm-sized, cotton-like masses of BNNT raw material were grown by this technique and spun directly into centimeters-long yarn. Nanotube lengths were observed to be 100 times that of those grown by the most closely related method. Self-assembly and growth models for these long BNNTs are discussed.

  6. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  7. A comparison between the mechanical and thermal properties of single-walled carbon nanotubes and boron nitride nanotubes

    Science.gov (United States)

    Li, Ting; Tang, Zhenan; Huang, Zhengxing; Yu, Jun

    2017-01-01

    Carbon nanotubes (CNTs) are semimetallic while boron nitride nanotubes (BNNTs) are wide band gap insulators. Despite the discrepancy in their electrical properties, a comparison between the mechanical and thermal properties of CNTs and BNNTs has a significant research value for their potential applications. In this work, molecular dynamics simulations are performed to systematically investigate the mechanical and thermal properties of CNTs and BNNTs. The calculated Young's modulus is about 1.1 TPa for CNTs and 0.72 TPa for BNNTs under axial compressions. The critical bucking strain and maximum stress are inversely proportional to both diameter and length-diameter ratio and CNTs are identified axially stiffer than BNNTs. Thermal conductivities of (10, 0) CNTs and (10, 0) BNNTs follow similar trends with respect to length and temperature and are lower than that of their two-dimensional counterparts, graphene nanoribbons (GNRs) and BN nanoribbons (BNNRs), respectively. As the temperature falls below 200 K (130 K) the thermal conductivity of BNNTs (BNNRs) is larger than that of CNTs (GNRs), while at higher temperature it is lower than the latter. In addition, thermal conductivities of a (10, 0) CNT and a (10, 0) BNNT are further studied and analyzed under various axial compressive strains. Low-frequency phonons which mainly come from flexure modes are believed to make dominant contribution to the thermal conductivity of CNTs and BNNTs.

  8. Boron nitride nanotubes coated with organic hydrophilic agents: Stability and cytocompatibility studies

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Tiago Hilário; Soares, Daniel Crístian Ferreira; Moreira, Luciana Mara Costa; Ornelas da Silva, Paulo Roberto [Serviço de Nanotecnologia, Centro de Desenvolvimento da Tecnologia Nuclear CDTN/CNEN, Avenida Presidente Antônio Carlos, 6.627, Campus da UFMG, Pampulha, CEP 31270-901 Belo Horizonte, Minas Gerais (Brazil); Gouvêa dos Santos, Raquel [Laboratório de Radiobiologia, Centro de Desenvolvimento da Tecnologia Nuclear CNEN/CDTN, Av. Presidente Antônio Carlos 6.627, Campus da UFMG, Pampulha, 31270-901 Belo Horizonte, Minas Gerais (Brazil); Barros de Sousa, Edésia Martins, E-mail: sousaem@cdtn.br [Serviço de Nanotecnologia, Centro de Desenvolvimento da Tecnologia Nuclear CDTN/CNEN, Avenida Presidente Antônio Carlos, 6.627, Campus da UFMG, Pampulha, CEP 31270-901 Belo Horizonte, Minas Gerais (Brazil)

    2013-12-01

    In the present study, Boron Nitride Nanotubes (BNNTs) were synthesized and functionalized with organic hydrophilic agents constituted by glucosamine (GA), polyethylene glycol (PEG){sub 1000}, and chitosan (CH) forming new singular systems. Their size, distribution, and homogeneity were determined by photon correlation spectroscopy, while their surface charge was determined by laser Doppler anemometry. The morphology and structural organization were evaluated by Transmission Electron Microscopy. The functionalization was evaluated by Thermogravimetry analysis and Fourier Transformer Infrared Spectroscopy. The results showed that BNNTs were successfully obtained and functionalized, reaching a mean size and dispersity deemed adequate for in vitro studies. The in vitro stability tests also revealed a good adhesion of functionalized agents on BNNT surfaces. Finally, the in vitro cytocompatibility of functionalized BNNTs against MCR-5 cells was evaluated, and the results revealed that none of the different functionalization agents disturbed the propagation of normal cells up to the concentration of 50 μg/mL. Furthermore, in this concentration, no significantly chromosomal or morphologic alterations or increase in ROS (Reactive Oxygen Species) could be observed. Thus, findings from the present study reveal an important stability and cytocompatibility of functionalized BNNTs as new potential drugs or radioisotope nanocarriers to be applied in therapeutic procedures. - Highlights: • BNNTs were synthesized and functionalized with organic hydrophilic agents. • Hydrophilic molecules do not alter the biocompatibility profile of BNNTs. • No significantly chromosomal or morphologic alterations in ROS could be observed.

  9. Ab initio investigation of the SCN{sup -} chemisorption of single-walled boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: alireza.soltani46@yahoo.com [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Ahmadian, Nasim [Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Kanani, Yaser [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Dehnokhalaji, Aliakbar; Mighani, Hossein [Department of Chemistry, Faculty of Science, Golestan University, Gorgan (Iran, Islamic Republic of)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer We explored the adsorption behavior of the SCN{sup -} on outer surface BNNTs via DFT. Black-Right-Pointing-Pointer We reported the NBO charge distribution of SCN{sup -} on BNNTs surface. Black-Right-Pointing-Pointer Chemisorptions are observed for SCN{sup -} on Al- and Ga-doped BNNTs. Black-Right-Pointing-Pointer Notable changes are observed in the electronic properties of BNNT after doping. - Abstract: The thiocyanate anion (SCN{sup -}) adsorption capacity of zigzag single-walled boron nitride nanotubes (SWBNNTs) is studied via first-principles theory. Binding energy corresponding to the most stable configuration of SCN{sup -}/BNNT is found to be -148.42 kJ mol{sup -1}, which is typical for the chemisorptions. Our results indicate that both aluminum and gallium doping can significantly enhance the adsorption energy of SCN{sup -}/BNNTs complexes. Our electronic results reveal that there is a significant orbital hybridization between two species in adsorption process being an evidence of strong interaction. Thus, we arrive at the prediction that the BNNTs nanocage can be implemented as suitable sensor for practical applications.

  10. Lattice mismatch induced curved configurations of hybrid boron nitride-carbon nanotubes

    Science.gov (United States)

    Zhang, Jin

    2016-10-01

    A unique curved configuration is observed in freestanding hybrid boron nitride-carbon nanotubes (BN-CNTs) based on molecular dynamics simulations, which, in previous studies, was tacitly assumed as a straight configuration. The physical fundamentals of this phenomenon are explored by using the continuum mechanics theory, where the curved configuration of BN-CNTs is found to be induced by the bending effect due to the lattice mismatch between the C domain and the BN domain. In addition, our results show that the curvature of the curved BN-CNTs is determined by their radius and composition. The curvature of BN-CNTs decreases with growing radius of BN-CNTs and becomes ignorable when their radius is relatively large. A non-monotonic relationship is detected between the curvature and the composition of BN-CNTs. Specifically, the curvature of BN-CNTs increases with growing BN concentration when the molar fraction of BN atoms is smaller than a critical value 0.52, but decreases with growing BN concentration when the molar fraction of BN atoms is larger than this critical value.

  11. Mechanical properties of boron-nitride nanotubes after intense femtosecond-laser excitation.

    Science.gov (United States)

    Bauerhenne, Bernd; Zijlstra, Eeuwe S; Kalitsov, Alan; Garcia, Martin E

    2014-04-11

    A femtosecond-laser pulse constitutes an unconventional tool to manipulate solids and nanostructures, for it may excite materials in a transient nonthermal state with hot electrons and atoms close to their initial temperature. Here we study the Young's modulus and the electronic band gap of a (5, 0) zigzag boron-nitride nanotube (BNNT) after an ultrashort laser pulse excitation using density functional theory, where the effect of a femtosecond-laser pulse is modelled by an instantaneous rise of the electronic temperature. At room temperature, before the laser pulse, we obtain a Young's modulus of 763 GPa, which decreases with increasing electronic temperature. For the band gap we find a value of 2.26 eV at room temperature, which increases with increasing electronic temperature and equals 3.28 eV at 28 420 K. We note that conventional means decrease the band gap of BNNTs and that a femtosecond-laser pulse is, to the best of our knowledge, the first tool that increases it. For comparison, we also present results for a (9, 0) zigzag BNNT.

  12. The vibration properties of the (n,0) boron nitride nanotubes from ab initio quantum chemical simulations.

    Science.gov (United States)

    Erba, A; Ferrabone, M; Baima, J; Orlando, R; Rérat, M; Dovesi, R

    2013-02-07

    The vibration spectrum of single-walled zigzag boron nitride (BN) nanotubes is simulated with an ab initio periodic quantum chemical method. The trend towards the hexagonal monolayer (h-BN) in the limit of large tube radius R is explored for a variety of properties related to the vibrational spectrum: vibration frequencies, infrared intensities, oscillator strengths, and vibration contributions to the polarizability tensor. The (n,0) family is investigated in the range from n = 6 (24 atoms in the unit cell and tube radius R = 2.5 Å) to n = 60 (240 atoms in the cell and R = 24.0 Å). Simulations are performed using the CRYSTAL program which fully exploits the rich symmetry of this class of one-dimensional periodic systems: 4n symmetry operators for the general (n,0) tube. Three sets of infrared active phonon bands are found in the spectrum. The first one lies in the 0-600 cm(-1) range and goes regularly to zero when R increases; the connection between these normal modes and the elastic and piezoelectric constants of h-BN is discussed. The second (600-800 cm(-1)) and third (1300-1600 cm(-1)) sets tend regularly, but with quite different speed, to the optical modes of the h-BN layer. The vibrational contribution of these modes to the two components (parallel and perpendicular) of the polarizability tensor is also discussed.

  13. Hexagonal boron nitride nanoparticles decorated halloysite clay nanotubes as a potential hydrogen storage medium

    Science.gov (United States)

    Muthu, R. Naresh; Rajashabala, S.; Kannan, R.

    2016-05-01

    The light weight and compact hydrogen storage materials is still prerequisite for the carbon free hydrogen fuel cell technology. In this work, the hydrogen storage performance of acid treated halloysite clay nanotubes (A-HNTs) and hexagonal boron nitride (h-BN) nanoparticles decorated acid treated halloysite nanoclay composite (A-HNT-h-BN) are demonstrated, where facile ultrasonic technique is adopted for the synthesis of A-HNT-h-BN nanoclay composite. Hydrogen storage studies were carried out using Sieverts-like hydrogenation setup. The A-HNTs and A-HNT-h-BN nanoclay composite were analyzed by XRD, FTIR, HRTEM, EDX, CHNS-elemental analysis and TGA. The A-HNT-h-BN nanoclay composite shows superior storage capacity of 2.19 wt% at 50 °C compared to the A-HNTs (0.58 wt%). A 100% desorption of stored hydrogen is noted in the temperature range of 138-175 °C. The average binding energy of hydrogen was found to be 0.34 eV for the prepared A-HNT-h-BN nanoclay composite. The excellent storage capability of A-HNT-h-BN nanoclay composite towards hydrogen at ambient temperature may find bright perspective in hydrogen fuel cell technology in near future.

  14. Glass fabrics self-cracking catalytic growth of boron nitride nanotubes

    Science.gov (United States)

    Wang, Jilin; Peng, Daijang; Long, Fei; Wang, Weimin; Gu, Yunle; Mo, Shuyi; Zou, Zhengguang; Fu, Zhengyi

    2017-02-01

    Glass fabrics were used to fabricate boron nitride nanotubes (BNNTs) with a broad diameter range through a combined chemical vapor deposition and self-propagation high-temperature synthesis (CVD-SHS) method at different holding times (0min, 30min, 90min, 180min and 360min). SEM characterization has been employed to investigate the macro and micro structure/morphology changes of the glass fabrics and BNNTs in detail. SEM image analysis has provided direct experimental evidences for the rationality of the optimized self-cracking catalyst VLS growth mechanism, including the transformation situations of the glass fabrics and the BNNTs growth processes respectively. This paper was the further research and compensation for the theory and experiment deficiencies in the new preparation method of BNNTs reported in our previous work. In addition, it is likely that the distinctive self-cracking catalyst VLS growth mechanism could provide a new idea to preparation of other inorganic functional nano-materials using similar one-dimensional raw materials as growth templates and catalysts.

  15. Thermal conductivity of bulk boron nitride nanotube sheets and their epoxy-impregnated composites

    Energy Technology Data Exchange (ETDEWEB)

    Jakubinek, Michael B.; Kim, Keun Su; Simard, Benoit [Security and Disruptive Technologies, Division of Emerging Technologies, National Research Council Canada, Ottawa, ON (Canada); Niven, John F. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Johnson, Michel B. [Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Ashrafi, Behnam [Aerospace, Division of Engineering, National Research Council Canada, Montreal, QC (Canada); White, Mary Anne [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Department of Chemistry, Dalhousie University, Halifax, NS (Canada)

    2016-08-15

    The thermal conductivity of bulk, self-supporting boron nitride nanotube (BNNT) sheets composed of nominally 100% BNNTs oriented randomly in-plane was measured by a steady-state, parallel thermal conductance method. The sheets were either collected directly during synthesis or produced by dispersion and filtration. Differences between the effective thermal conductivities of filtration-produced BNNT buckypaper (∝1.5 W m{sup -1} K{sup -1}) and lower-density as-synthesized sheets (∝0.75 W m{sup -1} K{sup -1}), which are both porous materials, were primarily due to their density. The measured results indicate similar thermal conductivity, in the range of 7-12 W m{sup -1} K{sup -1}, for the BNNT network in these sheets. High BNNT-content composites (∝30 wt.% BNNTs) produced by epoxy impregnation of the porous BNNT network gave 2-3 W m{sup -1} K{sup -1}, more than 10 x the baseline epoxy. The combination of manufacturability, thermal conductivity, and electrical insulation offers exciting potential for electrically insulating, thermally conductive coatings and packaging. Thermal conductivity of free-standing BNNT buckypaper, buckypaper composites, and related materials at room temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-05-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ~4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (~60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications.Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability

  17. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  18. DFT Study on Structural and Mechanical Properties of Single-walled Carbon and Boron Nitride Nanotubes Functionalized with Carbenes

    Directory of Open Access Journals (Sweden)

    I.K. Petrushenko

    2016-10-01

    Full Text Available This paper presents quantum chemistry study on structural and mechanical properties of a series of single-walled carbon nanotubes (SWCNTs and boron nitride nanotubes (BNNTs functionalized with carbenes. At the PBE/SVP level, the obtained data on pristine nanotubes are in good accordance with the results of previous experimental and theoretical studies. The calculations show that carbenes functionalization, in general, distorts both SWNCTs and BNNTs frameworks, but there exists the difference between ‘axial’ and ‘circumferential’ functionalization. It turns out that in both cases elastic properties diminish with increasing concentration of adsorbents, however, the functionalized SWCNTs and BNNTs remain strong enough to be suitable for reinforcement of composites.

  19. Structure and Properties of Nanomaterials: From Inorganic Boron Nitride Nanotubes to the Calcareous Biomineralized Tubes of H. dianthus

    Science.gov (United States)

    Tanur, Adrienne Elizabeth

    Several nanomaterials systems, both inorganic and organic in nature, have been extensively investigated by a number of characterization techniques including atomic force microscopy (AFM), electron microscopy, Fourier transform infrared spectroscopy (FTIR), and energy dispersive x-ray spectroscopy (EDX). The first system consists of boron nitride nanotubes (BNNTs) synthesized via two different methods. The first method, silica-assisted catalytic chemical vapour deposition (SA-CVD), produced boron nitride nanotubes with different morphologies depending on the synthesis temperature. The second method, growth vapour trapping chemical vapour deposition (GVT-CVD), produced multiwall boron nitride nanotubes (MWBNNTs). The bending modulus of individual MWBNNTs was determined using an AFM three-point bending technique, and was found to be diameter-dependent due to the presence of shear effects. The second type of nanomaterial investigated is the biomineralized calcareous shell of the serpulid Hydroides dianthus. This material was found to be an inorganic-organic composite material composed of two different morphologies of CaCO3, collagen, and carboxylated and sulphated polysaccharides. The organic components were demonstrated to mediate the mineralization of CaCO3 in vitro. The final system studied is the proteinaceous cement of the barnacle Amphibalanus amphitrite. The secondary structure of the protein components was investigated via FTIR, revealing the presence of beta-sheet conformation, and nanoscale rod-shaped structures within the cement were identified as beta-sheet containing amyloid fibrils via chemical staining. These rod-shaped structures exhibited a stiffer nature compared with other structures in the adhesive, as measured by AFM nanoindentation.

  20. Improved tensile and buckling behavior of defected carbon nanotubes utilizing boron nitride coating - A molecular dynamic study

    Science.gov (United States)

    Badjian, H.; Setoodeh, A. R.

    2017-02-01

    Synthesizing inorganic nanostructures such as boron nitride nanotubes (BNNTs) have led to immense studies due to their many interesting functional features such as piezoelectricity, high temperature resistance to oxygen, electrical insulation, high thermal conductivity and very long lengths as physical features. In order to utilize the superior properties of pristine and defected carbon nanotubes (CNTs), a hybrid nanotube is proposed in this study by forming BNNTs surface coating on the CNTs. The benefits of such coating on the tensile and buckling behavior of single-walled CNTs (SWCNTs) are illustrated through molecular dynamics (MD) simulations of the resulted nanostructures during the deformation. The AIREBO and Tersoff-Brenner potentials are employed to model the interatomic forces between the carbon and boron nitride atoms, respectively. The effects of chiral indices, aspect ratio, presence of mono-vacancy defects and coating dimension on coated/non-coated CNTs are examined. It is demonstrated that the coated defective CNTs exhibit remarkably enhanced ultimate strength, buckling load capacity and Young's modulus. The proposed coating not only enhances the mechanical properties of the resulted nanostructure, but also conceals it from few external factors impacting the behavior of the CNT such as humidity and high temperature.

  1. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy's Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los

  2. The role of boron nitride nanotube as a new chemical sensor and potential reservoir for hydrogen halides environmental pollutants

    Science.gov (United States)

    Yoosefian, Mehdi; Etminan, Nazanin; Moghani, Maryam Zeraati; Mirzaei, Samaneh; Abbasi, Shima

    2016-10-01

    Density functional theory (DFT) studies on the interaction of hydrogen halides (HX) environmental pollutants and the boron nitride nanotubes (BNNTs) have been reported. To exploit the possibility of BNNTs as gas sensors, the adsorption of hydrogen fluoride (HF), hydrogen chloride (HCl) and hydrogen bromide (HBr) on the side wall of armchair (5,5) boron nitride nanotubes have been investigated. B3LYP/6-31G (d) level were used to analyze the structural and electronic properties of investigate sensor. The adsorption process were interpreted by highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO), quantum theory of atoms in molecules (QTAIM), natural bond orbital (NBO) and molecular electrostatic potential (MEP) analysis. Topological parameters of bond critical points have been used to calculate as measure of hydrogen bond (HB) strength. Stronger binding energy, larger charge transfer and charge density illustrate that HF gas possesses chemisorbed adsorption process. The obtained results also show the strongest HB in HF/BNNT complex. We expect that results could provide helpful information for the design of new BNNTs based sensing devices.

  3. Theoretical Study of Thiazole Adsorption on the (6,0) zigzag Single-Walled Boron Nitride Nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Moradi, Ali Varasteh; Peyghan, Ali Ahmadi; Hashemian, Saeede; Baei, Mohammad T. [Islamic Azad Univ., Tehran (Iran, Islamic Republic of)

    2012-10-15

    The interaction of thiazole drug with (6,0) zigzag single-walled boron nitride nanotube of finite length in gas and solvent phases was studied by means of density functional theory (DFT) calculations. In both phases, the binding energy is negative and presenting characterizes an exothermic process. Also, the binding energy in solvent phase is more than that the gas phase. Binding energy corresponding to adsorption of thiazole on the BNNT model in the gas and solvent phases was calculated to be .0.34 and .0.56 eV, and about 0.04 and 0.06 electrons is transferred from the thiazole to the nanotube in the phases. The significantly changes in binding energies and energy gap values by the thiazole adsorption, shows the high sensitivity of the electronic properties of BNNT towards the adsorption of the thiazole molecule. Frontier molecular orbital theory (FMO) and structural analyses show that the low energy level of LUMO, electron density, and length of the surrounding bonds of adsorbing atoms help to the thiazole adsorption on the nanotube. Decrease in global hardness, energy gap and ionization potential is due to the adsorption of the thiazole, and consequently, in the both phases, stability of the thiazole-attached (6,0) BNNT model is decreased and its reactivity increased. Presence of polar solvent increases the electron donor of the thiazole and the electrophilicity of the complex. This study may provide new insight to the development of functionalized boron nitride nanotubes as drug delivery systems for virtual applications.

  4. A first principles study of pristine and Al-doped boron nitride nanotubes interacting with platinum-based anticancer drugs

    Science.gov (United States)

    Shakerzadeh, Ehsan; Noorizadeh, Siamak

    2014-03-01

    Interaction of cis-platin and neda-platin, two conventional platinum-based anticancer drugs, with pristine [8,8] and Al-doped [8,0] boron nitride nanotubes (BNNTs) are investigated using the density functional theory (DFT) method. The obtained results indicate that cis-platin and neda-platin weakly interact with pristine zig zag or armchair BNNTs with a little dependency on the adsorbing positions; while both cis-platin and neda-platin are preferentially adsorbed onto the Al atom of the Al-doped BNNT with considerable adsorption energies. Therefore the Al-doped-BNNT might be an efficient carrier for delivery of these drugs in nanomedicine domain. The electronic structures of the stable configurations are also investigated through both DOS and PDOS spectra. The obtained results introduce the Al-doped-BNNT as an efficient carrier for delivery of cis-platin and neda-platin in nanomedicine domain.

  5. The Tunable Hybrid Surface Phonon and Plasmon Polariton Modes in Boron Nitride Nanotube and Graphene Monolayer Heterostructures

    CERN Document Server

    Sun, Yu; Cheng, Jiangtao; Liu, Jiansheng

    2014-01-01

    The hybrid modes incorporating surface phonon polariton (SPhP) modes in boron nitride nanotubes (BNNTs) and surface plasmon polariton (SPP) modes in graphene monolayers are theoretically studied. The combination of the 1D BNNTs and 2D graphene monolayer further improves the modal characteristics with electrical tunability. Superior to the graphene monolayers, the proposed heterostructures supports single mode transmission with lateral optical confinement. The modal characteristics can be shifted from SPP-like toward SPhP-like. Both the figure of merit and field enhancement of hybrid modes are improved over 3 times than those of BNNT SPhP modes, which may further enable sub-wavelength mid-infrared applications.

  6. Boron nitride nanotube-mediated stimulation modulates F/G-actin ratio and mechanical properties of human dermal fibroblasts

    Science.gov (United States)

    Ricotti, Leonardo; das Neves, Ricardo Pires; Ciofani, Gianni; Canale, Claudio; Nitti, Simone; Mattoli, Virgilio; Mazzolai, Barbara; Ferreira, Lino; Menciassi, Arianna

    2014-02-01

    F/G-actin ratio modulation is known to have an important role in many cell functions and in the regulation of specific cell behaviors. Several attempts have been made in the latest decades to finely control actin production and polymerization, in order to promote certain cell responses. In this paper we demonstrate the possibility of modulating F/G-actin ratio and mechanical properties of normal human dermal fibroblasts by using boron nitride nanotubes dispersed in the culture medium and by stimulating them with ultrasound transducers. Increasing concentrations of nanotubes were tested with the cells, without any evidence of cytotoxicity up to 10 μg/ml concentration of nanoparticles. Cells treated with nanoparticles and ultrasound stimulation showed a significantly higher F/G-actin ratio in comparison with the controls, as well as a higher Young's modulus. Assessment of Cdc42 activity revealed that actin nucleation/polymerization pathways, involving Rho GTPases, are probably influenced by nanotube-mediated stimulation, but they do not play a primary role in the significant increase of F/G-actin ratio of treated cells, such effect being mainly due to actin overexpression.

  7. Density functional theory study of ultrasmall diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Fakhrabad, Davoud Vahedi; Shahtahmassebi, Nasser [Nano Research Center, Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Movlarooy, Tayebeh [Department of Physics, Shahrood University of Technology, Shahrood (Iran, Islamic Republic of)

    2012-05-15

    We present a first principles calculation on the electronic structure and optical properties of ultrasmall-diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes (BNNT, SiCNT, and CNT) by using full potential linear augmented plane wave (FP-LAPW) and pseudo potential plane wave (PP-PW) methods. The atomic geometries of all considered models are optimized. Calculations of optical spectra are performed under electric fields polarized both parallel and perpendicular with respect to the nanotube (NT) axis. Our results show that the dielectric function is anisotropic and it is revealed that (2,2) SiCNT would be better dielectric material than (2,2) BNNT. We have calculated the first, second and third optical transitions for the considered models. The value of the optical gap for (2,2) BNNT is obtained much larger than that of (2,2) SiCNT and (2,2) CNT. The results show that contrary to the (2,2) CNT being metallic, the (2,2) BNNT, and (2,2) SiCNT are wide indirect gap semiconductors. We also present the energy loss function; in this case the intertube interactions play an important role with respect to the optical spectroscopy. Our results revealed that unlike the dielectric function, the calculated energy loss function show rather weak anisotropy. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  9. Theoretical study of interaction between Tacrine and finite-length Al-doped Carbon and Boron nitride Nanotubes: A Semiempirical drug delivery study in thermodynamic view

    Directory of Open Access Journals (Sweden)

    Nasrin Zeighami

    2014-12-01

    Full Text Available In order to extend our previous theoretical calculations that dealt with the thermochemistry of doping the single walled boron nitride nano tubes, BNNTs, and carbon nanotubes ,CNTs, with alminium atoms [1], we have used the AM 1, PM 3, and PM 6 semiempirical methods to investigate the interaction of the tacrine molecule (a drug for the treatment of Alzheimer's disease with the side-walls of aluminum doped boron nitride and carbon nano tubes in thermodynamic views.At first, the frequency calculations were carried out to confirm the stability of the involved structures. In addition, the theoretical thermodynamic study of tacrine adsorption onto the considered nanotubes was performed and the thermodynamic functions such as enthalpy changes, entropy changes and Gibbs free energy changes of the adsorption process were evaluated at different temperatures. Our results suggest the aluminum doped boron nitride nano tubes and alminium doped carbon nano tubes may be considered as the proper carries for the drug delivery of tacrine.

  10. New nanoforms of carbon and boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Pokropivny, V V [Institute for Problems of Materials Science of National Academy of Sciences of Ukraine (Ukraine); Ivanovskii, A L [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)], e-mail: Ivanovskii@ihim.uran.ru

    2008-10-31

    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  11. New nanoforms of carbon and boron nitride

    Science.gov (United States)

    Pokropivny, V. V.; Ivanovskii, A. L.

    2008-10-01

    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  12. Largely enhanced dielectric properties of carbon nanotubes/polyvinylidene fluoride binary nanocomposites by loading a few boron nitride nanosheets

    Science.gov (United States)

    Yang, Minhao; Zhao, Hang; He, Delong; Bai, Jinbo

    2016-08-01

    The ternary nanocomposites of boron nitride nanosheets (BNNSs)/carbon nanotubes (CNTs)/polyvinylidene fluoride (PVDF) are fabricated via a combination of solution casting and extrusion-injection processes. The effects of BNNSs on the electrical conductivity, dielectric behavior, and microstructure changes of CNTs/PVDF binary nanocomposites are systematically investigated. A low percolation value (fc) for the CNTs/PVDF binary system is obtained due to the integration of solution and melting blending procedures. Two kinds of CNTs/PVDF binary systems with various CNTs contents (fCNTs) as the matrix are discussed. The results reveal that compared with CNTs/PVDF binary systems at the same fCNTs, the ternary BNNSs/CNTs/PVDF nanocomposites exhibit largely enhanced dielectric properties due to the improvement of the CNTs dispersion state and the conductive network. The dielectric constant of CNTs/PVDF binary nanocomposite with 6 vol. % CNTs (fCNTs fc), it displays a 43.32% improvement from 1325 to 1899 after the addition of 3 vol. % BNNSs. The presence of BNNSs facilitates the formation of the denser conductive network. Meanwhile, the ternary BNNSs/CNTs/PVDF systems exhibit a low dielectric loss. The adjustable dielectric properties could be obtained by employing the ternary systems due to the microstructure changes of nanocomposites.

  13. Optical and electronic properties of SO2 molecule adsorbed on Si-doped (8, 0) boron nitride nanotube

    Science.gov (United States)

    Guo, Shuang-Shuang; Wei, Xiu-Mei; Zhang, Jian-Min; Zhu, Gang-Qiang; Guo, Wan-Jin

    2016-09-01

    The study of the optical properties of pristine BNNT, Si-doped BNNTs and SO2 molecule adsorption on Si-doped BNNTs is that, to our knowledge, few relevant research have ever been found. In this paper, the adsorption behaviors of Sulfur dioxide (SO2) molecule on Si-doped Boron nitride nanotubes (BNNTs) are investigated applying the first-principles calculations. The main contribution of this paper is that the foremost investigation for the optical properties of the pristine BNNT, Si-doped BNNTs and SO2 adsorption on Si-doped BNNTs. Additionally, the electronic properties and the structural properties are also presented. In our calculations of optical properties, the dielectric constant, the refractive index and the absorption coefficient are obtained. Comparing the pristine BNNT, our results indicate that, the blue-shifts (in the main peaks of the dielectric constant of SiB -BNNT and SO2-SiB -BNNT), and the red-shifts (in the main peaks of the refractive index of SiN -BNNT and SO2-SiN -BNNT) are appeared. Under these conditions, Si-doped BNNT and Si-doped BNNT with SO2 adsorption, the gaps are reduced both for the speculated optical band gaps and the electronic structure band gaps.

  14. Carbon Nanotube/Boron Nitride Nanocomposite as a Significant Bifunctional Electrocatalyst for Oxygen Reduction and Oxygen Evolution Reactions.

    Science.gov (United States)

    Patil, Indrajit M; Lokanathan, Moorthi; Ganesan, Balakrishnan; Swami, Anita; Kakade, Bhalchandra

    2017-01-12

    It is an immense challenge to develop bifunctional electrocatalysts for oxygen reduction reactions (ORR) and oxygen evolution reactions (OER) in low temperature fuel cells and rechargeable metal-air batteries. Herein, a simple and cost-effective approach is developed to prepare novel materials based on carbon nanotubes (CNTs) and a hexagonal boron nitride (h-BN) nanocomposite (CNT/BN) through a one-step hydrothermal method. The structural analysis and morphology study confirms the formation of a homogeneous composite and merging of few exfoliated graphene layers of CNTs on the graphitic planes of h-BN, respectively. Moreover, the electrochemical study implies that CNT/BN nanocomposite shows a significantly higher ORR activity with a single step 4-electron transfer pathway and an improved onset potential of +0.86 V versus RHE and a current density of 5.78 mA cm(-2) in alkaline conditions. Interestingly, it exhibits appreciably better catalytic activity towards OER at low overpotential (η=0.38 V) under similar conditions. Moreover, this bifunctional catalyst shows substantially higher stability than a commercial Pt/C catalyst even after 5000 cycles. Additionally, this composite catalyst does not show any methanol oxidation reactions that nullify the issues due to fuel cross-over effects in direct methanol fuel cell applications.

  15. Influence of sintering temperature on microstructure and properties of SiO{sub 2} ceramic incorporated with boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Du Ming [Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Engineering Ceramics Key Laboratory of Shandong Province, Shandong University, Jinan 250061 (China); Bi Jianqiang, E-mail: bjq1969@163.com [Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China) and Engineering Ceramics Key Laboratory of Shandong Province, Shandong University, Jinan 250061 (China) and Faculty of Engineering, Department of Physics and Astronomy, and Nanoscience and Engineering Center, University of Georgia, Athens, GA 30602 (United States); Wang Weili; Sun Xiaolin; Long Nana [Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Engineering Ceramics Key Laboratory of Shandong Province, Shandong University, Jinan 250061 (China)

    2012-05-01

    Highlights: Black-Right-Pointing-Pointer SiO{sub 2} matrix containing 5 wt% BNNTs was fabricated at 1300-1450 Degree-Sign C. Black-Right-Pointing-Pointer Microstructure and properties (mechanical and dielectric) were investigated. Black-Right-Pointing-Pointer The most superior mechanical and dielectric properties were attained at 1400 Degree-Sign C. - Abstract: Silica (SiO{sub 2}) ceramic containing 5 wt% boron nitride nanotubes (BNNTs) was fabricated by hot pressing at 1200-1450 Degree-Sign C. The influences of the sintering temperature on phase composition, relative density, microstructure and mechanical and dielectric properties were investigated, respectively. As the increase of sintering temperature, mechanical properties varied dramatically, while the relative density and dielectric constant increased during the range of sintering temperature. The composite sintered at 1400 Degree-Sign C exhibited superior properties, attaining flexure strength of 120.5 MPa, fracture toughness of 1.21 MPa m{sup 1/2}, dielectric constant of 4 and relative density of 92%. Particularly, flexure strength and fracture toughness were about 230.8% and 208.6% higher than those of monolithic SiO{sub 2}, respectively.

  16. Methane storage in homogeneous armchair open-ended single-walled boron nitride nanotube triangular arrays: a grand canonical Monte Carlo simulation study.

    Science.gov (United States)

    Mahdizadeh, Sayyed Jalil; Tayyari, Sayyed Faramarz

    2012-06-01

    The physisorption of methane in homogeneous armchair open-ended SWBNNT triangular arrays was evaluated using grand canonical ensemble Monte Carlo simulation for tubes 11.08, 13.85, 16.62, and 19.41 Å [(8,8), (10,10), (12,12), and (14,14), respectively] in diameter, at temperatures of 273, 298, 323, and 373 K, and at fugacities of 0.5-9.0 Mpa. The intermolecular forces were modeled using the Lennard-Jones potential model. The absolute, excess, and delivery adsorption isotherms of methane were calculated for the various boron nitride nanotube arrays. The specific surface areas and the isosteric heats of adsorption, Q(st), were also studied, different isotherm models were fitted to the simulated adsorption data, and the model parameters were correlated. According to the results, it is possible to reach 108% and 140% of the US Department of Energy's target for CH(4) storage (180 v/v at 298 K and 35 bar) using the SWBNNT array with nanotubes 16.62 and 19.41 Å in diameter, respectively, as adsorbent. The results show that for a van der Waals gap of 3.4 Å, there is no interstitial adsorption except for arrays containing nanotubes with diameters of >15.8 Å. Multilayer adsorption starts to occur in arrays containing nanotubes with diameters of >16.62 Å, and the minimum pressure required for multilayer adsorption is 1.0 MPa. A brief comparison of the methane adsorption capacities of single-walled carbon and boron nitride nanotube arrays was also performed.

  17. Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2015-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

  18. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Boron-nitride nanotubes (BNNTs) exhibit electroactive behavior in response to mechanical deformation, but the origin of this phenomenon is not well understood. Our...

  19. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  20. Lithium absorption on single-walled boron nitride, aluminum nitride, silicon carbide and carbon nanotubes: A first-principles study

    Science.gov (United States)

    Darvish Ganji, M.; Dalirandeh, Z.; Khorasani, M.

    2016-03-01

    Using the DFT-B3LYP calculations we investigate the adsorption of Li atom on CNT, BNNT, AlNNT and SiCNT. We found that Li atom can be chemisorbed on zig-zag SiCNT with binding energy of -2.358 eV and charge transfer of 0.842 |e|, which are larger than the results of other nanotubes. The binding energy of Li on SiCNT is foun to be stronger than activation energy barrier indicating that Li metal could be well dispersed on SiCNTs. Furthermore, the average voltage caused by the lithium adsorption on SiCNT demonstrated that SiCNTs could exhibit as a stable anode similar to the lithium metal anode. The binding nature has been rationalized by analyzing the electronic structures. Our findings demonstrate that Li-BNNT, Li-SiCNT and Li-AlNNT systems exhibit spin polarized behaviors and can fascinating potential application in future spintronics. Also, Li-SiCNT system with rather small band gap might be a promising material for optical applications and active molecule in its environment.

  1. Role of structural defects in the ultraviolet luminescence of multiwall boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Pierret, Aurélie; Nong, Hanond; Fossard, Frédéric; Loiseau, Annick, E-mail: annick.loiseau@onera.fr [Laboratoire d' Etude des Microstructures (LEM), ONERA-CNRS, BP 72, 92322 Châtillon cedex (France); Attal-Trétout, Brigitte [DMPH, ONERA, Chemin de la Hunière et des Joncherettes, BP 80100, 91123 Palaiseau (France); Xue, Yanming; Golberg, Dmitri [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Barjon, Julien, E-mail: julien.barjon@uvsq.fr [Groupe d' Etude de la Matière Condensée, University of Versailles St-Quentin and CNRS, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78000 Versailles (France)

    2015-12-21

    BN nanotubes (BNNTs) are structurally similar to their carbon counterparts, though much less investigated. New synthesis methods have been recently reported, enabling the production of industrial quantities and stimulating the search of new applications for the BNNTs. In this paper, we investigate the luminescence of multiwall BNNTs. By performing cathodoluminescence experiments on single tubes at 10 K, we show that the tube luminescence is highly heterogeneous (i) from tube to tube and (ii) spatially along a single tube. By combining cathodoluminescence measurements with a nanometer excitation and transmission electron microscopy on the same tube, we correlate luminescence and structural features. We conclude that the near-band-edge luminescence of BNNTs (≈5.4 eV) is related to the presence of extended structural defects, such as dislocations or ruptures in the wall stacking.

  2. Role of structural defects in the ultraviolet luminescence of multiwall boron nitride nanotubes

    Science.gov (United States)

    Pierret, Aurélie; Nong, Hanond; Fossard, Frédéric; Attal-Trétout, Brigitte; Xue, Yanming; Golberg, Dmitri; Barjon, Julien; Loiseau, Annick

    2015-12-01

    BN nanotubes (BNNTs) are structurally similar to their carbon counterparts, though much less investigated. New synthesis methods have been recently reported, enabling the production of industrial quantities and stimulating the search of new applications for the BNNTs. In this paper, we investigate the luminescence of multiwall BNNTs. By performing cathodoluminescence experiments on single tubes at 10 K, we show that the tube luminescence is highly heterogeneous (i) from tube to tube and (ii) spatially along a single tube. By combining cathodoluminescence measurements with a nanometer excitation and transmission electron microscopy on the same tube, we correlate luminescence and structural features. We conclude that the near-band-edge luminescence of BNNTs (≈5.4 eV) is related to the presence of extended structural defects, such as dislocations or ruptures in the wall stacking.

  3. Mechanical properties of bamboo-like boron nitride nanotubes by in situ TEM and MD simulations: strengthening effect of interlocked joint interfaces.

    Science.gov (United States)

    Tang, Dai-Ming; Ren, Cui-Lan; Wei, Xianlong; Wang, Ming-Sheng; Liu, Chang; Bando, Yoshio; Golberg, Dmitri

    2011-09-27

    Understanding the influence of interfacial structures on the nanoarchitecture mechanical properties is of particular importance for its mechanical applications. Due to a small size of constituting nanostructural units and a consequently high volume ratio of such interfacial regions, this question becomes crucial for the overall mechanical performance. Boron nitride bamboo-like nanotubes, called hereafter boron nitride nanobamboos (BNNBs), are composed of short BN nanotubular segments with specific interfaces at the bamboo-shaped joints. In this work, the mechanical properties of such structures are investigated by using direct in situ transmission electron microscopy tensile tests and molecular dynamics simulations. The mechanical properties and deformation behaviors are correlated with the interfacial structure under atomic resolution, and a geometry strengthening effect is clearly demonstrated. Due to the interlocked joint interfacial structures and compressive interfacial stresses, the deformation mechanism is switched from an interplanar sliding mode to an in-plane tensile elongation mode. As a result of such a specific geometry strengthening effect, the BNNBs show high tensile fracture strength and Young's modulus up to 8.0 and 225 GPa, respectively.

  4. Theoretical investigation of OCN{sup -} adsorption onto boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: Alireza.soltani46@yahoo.com [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Ahmadian, Nasim [Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshar (Iran, Islamic Republic of); Amirazami, Abolfazl [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Masoodi, Anis [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Lemeski, E. Tazikeh; Moradi, Ali Varasteh [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Adsorption behavior of OCN{sup -} on (6, 0) and (8, 0) BNNTs based on density functional theory. Black-Right-Pointing-Pointer OCN{sup -} is strongly bound to BNNTs in corresponding configurations. Black-Right-Pointing-Pointer The effect of the OCN{sup -} adsorption on the geometries and electronic properties of related BNNTs is investigated. Black-Right-Pointing-Pointer BNNTs is suggested as superior sensor for OCN{sup -} comparing with CNTs. - Abstract: First-principles calculations based on density functional theory (DFT) method are used to investigate the adsorption properties of OCN{sup -} on H-capped zigzag and armchair single-walled BN nanotubes (BNNTs). The results indicate that OCN{sup -} is strongly bound to the outer surface of zigzag (6, 0) BNNTs in comparison with armchair (5, 5) BNNT. Binding energy and equilibrium distance corresponding to the most stable configuration are found to be -486.79 kJ mol{sup -1} and 1.526 Angstrom-Sign , respectively being typical for the chemisorptions. Energy gap, dipole moment, natural atomic orbital occupancies and global indices for most stable configuration are calculated. Furthermore, the effect of the OCN{sup -} adsorption on the geometries and electronic properties of related BNNT is also studied. The calculated density of states (DOS) reveals that there is a significant orbital hybridization between two species in adsorption process being an evidence of strong interaction. Therefore, one can conclude that BNNTs play an important role as suitable sensor.

  5. Interaction of vitamins B3 and C and their radicals with (5, 0) single-walled boron nitride nanotube for use as biosensor or in drug delivery

    Indian Academy of Sciences (India)

    Davood Farmanzadeh; Samereh Ghazanfary

    2013-11-01

    Electronic properties of the covalent and noncovalent adsorption of single-walled boron nitride nanotube with vitamins B3 and C and their radicals are investigated through the density functional theory. Results show that noncovalent and covalent adsorption of vitamin B3 on BNNT could make these systems of interest for drug delivery purposes due to the possibility of easily detaching the pristine molecule from the BNNT surface. Noncovalent and covalent adsorption of vitamin C on BNNT result in modification of the electronic properties of BNNT, these results are extremely relevant in identifying the potential application of functionalized BNNT with vitamin C as nano-sensor. The present results are expected to provide useful guidance for the relevant experimental study.

  6. Cryogenic separation of hydrogen isotopes in single-walled carbon and boron-nitride nanotubes: insight into the mechanism of equilibrium quantum sieving in quasi-one-dimensional pores.

    Science.gov (United States)

    Kowalczyk, Piotr; Gauden, Piotr A; Terzyk, Artur P

    2008-07-17

    Quasi-one-dimensional cylindrical pores of single-walled boron nitride and carbon nanotubes efficiently differentiate adsorbed hydrogen isotopes at 33 K. Extensive path integral Monte Carlo simulations revealed that the mechanisms of quantum sieving for both types of nanotubes are quantitatively similar; however, the stronger and heterogeneous external solid-fluid potential generated from single-walled boron nitride nanotubes enhanced the selectivity of deuterium over hydrogen both at zero coverage and at finite pressures. We showed that this enhancement of the D(2)/H(2) equilibrium selectivity results from larger localization of hydrogen isotopes in the interior space of single-walled boron nitride nanotubes in comparison to that of equivalent single-walled carbon nanotubes. The operating pressures for efficient quantum sieving of hydrogen isotopes are strongly depending on both the type as well as the size of the nanotube. For all investigated nanotubes, we predicted the occurrence of the minima of the D(2)/H(2) equilibrium selectivity at finite pressure. Moreover, we showed that those well-defined minima are gradually shifted upon increasing of the nanotube pore diameter. We related the nonmonotonic shape of the D(2)/H(2) equilibrium selectivity at finite pressures to the variation of the difference between the average kinetic energy computed from single-component adsorption isotherms of H(2) and D(2). In the interior space of both kinds of nanotubes hydrogen isotopes formed solid-like structures (plastic crystals) at 33 K and 10 Pa with densities above the compressed bulk para-hydrogen at 30 K and 30 MPa.

  7. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  8. Investigation of interactions between poly-L-lysine-coated boron nitride nanotubes and C2C12 cells: up-take, cytocompatibility, and differentiation

    Directory of Open Access Journals (Sweden)

    G Ciofani

    2010-04-01

    Full Text Available G Ciofani1, L Ricotti1, S Danti2,3, S Moscato4, C Nesti2, D D’Alessandro2,4, D Dinucci5, F Chiellini5, A Pietrabissa3, M Petrini2,3, A Menciassi1,61Scuola Superiore Sant’Anna, Pisa, Italy; 2CUCCS-RRMR, Center for the Clinical Use of Stem Cells – Regional Network of Regenerative Medicine, 3Department of Oncology, Transplants and Advanced Technologies, 4Department of Human Morphology and Applied Biology, University of Pisa, Pisa, Italy; 5Laboratory of Bioactive Polymeric Materials for Biomedical and Environmental Applications (BIOlab, UdR INSTM, Department of Chemistry and Industrial Chemistry, University of Pisa, San Piero a Grado, Italy; 6Italian Institute of Technology, Genova, ItalyAbstract: Boron nitride nanotubes (BNNTs have generated considerable interest within the scientific community by virtue of their unique physical properties, which can be exploited in the biomedical field. In the present in vitro study, we investigated the interactions of poly-L-lysine-coated BNNTs with C2C12 cells, as a model of muscle cells, in terms of cytocompatibility and BNNT internalization. The latter was performed using both confocal and transmission electron microscopy. Finally, we investigated myoblast differentiation in the presence of BNNTs, evaluating the protein synthesis of differentiating cells, myotube formation, and expression of some constitutive myoblastic markers, such as MyoD and Cx43, by reverse transcription – polymerase chain reaction and Western blot analysis. We demonstrated that BNNTs are highly internalized by C2C12 cells, with neither adversely affecting C2C12 myoblast viability nor significantly interfering with myotube formation.Keywords: boron nitride nanotubes, C2C12 cells, cytocompatibility, up-take, differentiation, MyoD, connexin 43

  9. Boron nitride nanotubes radiolabeled with ⁹⁹mTc: preparation, physicochemical characterization, biodistribution study, and scintigraphic imaging in Swiss mice.

    Science.gov (United States)

    Soares, Daniel Crístian Ferreira; Ferreira, Tiago Hilário; Ferreira, Carolina de Aguiar; Cardoso, Valbert Nascimento; de Sousa, Edésia Martins Barros

    2012-02-28

    In the present study, boron nitride nanotubes (BNNTs) were synthesized from an innovative process and functionalized with a glycol chitosan polymer in CDTN (Centro de Desenvolvimento da Tecnologia Nuclear) laboratories. As a means of studying their in vivo biodistribution behavior, these nanotubes were radiolabeled with (99m)Tc and injected in mice. Their size, distribution, and homogeneity were determined by photon correlation spectroscopy (PCS), while their zeta potential was determined by laser Doppler anemometry. The morphology and structural organization were evaluated by scanning electron microscopy (SEM). The functionalization in the nanotubes was evaluated by thermogravimetry analysis (TGA) and Fourier transformer infrared spectroscopy. The results showed that BNNTs were obtained and functionalized successfully, reaching a mean size and dispersity deemed adequate for in vivo studies. The BNNTs were also evaluated by ex vivo biodistribution studies and scintigraphic imaging in healthy mice. The results showed that nanostructures, after 24h, having accumulated in the liver, spleen and gut, and eliminated via renal excretion. The findings from this study reveal a potential application of functionalized BNNTs as new potential drugs or radioisotope nanocarriers to be applied in therapeutic procedures.

  10. Quantum emission from hexagonal boron nitride monolayers

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  11. Method of synthesizing cubic system boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yuzu, S.; Sumiya, H.; Degawa, J.

    1987-10-13

    A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

  12. Oxygen radical functionalization of boron nitride nanosheets

    OpenAIRE

    MAY, PETER; Coleman, Jonathan; MCGOVERN, IGNATIUS; GOUNKO, IOURI; Satti, Amro

    2012-01-01

    PUBLISHED The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalisation of the groups to yield hydroxyl-functionalized BNNSs (OH-BNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-Vis, F...

  13. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  14. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  15. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  16. Stability characteristics and structural properties of single- and double-walled boron-nitride nanotubes under physical adsorption of Flavin mononucleotide (FMN) in aqueous environment using molecular dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Ansari, R., E-mail: r_ansari@guilan.ac.ir; Ajori, S., E-mail: Shahram_ajori1366@yahoo.com; Ameri, A.

    2016-03-15

    Graphical abstract: Structural properties and stability characteristics of single- and double-walled boron-nitride nanotubes functionalized with Flavin mononucleotide (FMN) in aqueous environment are investigated employing molecular dynamics simulations. - Highlights: • Structural and buckling analysis of boron-nitride nanotubes under physical adsorption of Flavin mononucleotide (FMN). • Gyration radius increases linearly as the weight percentage of FMN increases. • Presence of water molecules results in more expansion of FMN around BNNTs. • Critical buckling force of functionalized BNNTs is higher than that of pure BNNTs. • The critical strain of functionalized BNNTs is found to be lower than that of pure ones. - Abstract: The non-cytotoxic properties of Boron-nitride nanotubes (BNNTs) and the ability of stable interaction with biomolecules make them so promising for biological applications. In this research, molecular dynamics (MD) simulations are performed to investigate the structural properties and stability characteristics of single- and double-walled BNNTs under physical adsorption of Flavin mononucleotide (FMN) in vacuum and aqueous environments. According to the simulation results, gyration radius increases by rising the weight percentage of FMN. Also, the results demonstrate that critical buckling force of functionalized BNNTs increases in vacuum. Moreover, it is observed that by increasing the weight percentage of FMN, critical force of functionalized BNNTs rises. By contrast, critical strain reduces by functionalization of BNNTs in vacuum. Considering the aqueous environment, it is observed that gyration radius and critical buckling force of functionalized BNNTs increase more considerably than those of functionalized BNNTs in vacuum, whereas the critical strains approximately remain unchanged.

  17. Boron Nitride Nanostructures: Fabrication, Functionalization and Applications.

    Science.gov (United States)

    Yin, Jun; Li, Jidong; Hang, Yang; Yu, Jin; Tai, Guoan; Li, Xuemei; Zhang, Zhuhua; Guo, Wanlin

    2016-06-01

    Boron nitride (BN) structures are featured by their excellent thermal and chemical stability and unique electronic and optical properties. However, the lack of controlled synthesis of quality samples and the electrically insulating property largely prevent realizing the full potential of BN nanostructures. A comprehensive overview of the current status of the synthesis of two-dimensional hexagonal BN sheets, three dimensional porous hexagonal BN materials and BN-involved heterostructures is provided, highlighting the advantages of different synthetic methods. In addition, structural characterization, functionalizations and prospective applications of hexagonal BN sheets are intensively discussed. One-dimensional BN nanoribbons and nanotubes are then discussed in terms of structure, fabrication and functionality. In particular, the existing routes in pursuit of tunable electronic and magnetic properties in various BN structures are surveyed, calling upon synergetic experimental and theoretical efforts to address the challenges for pioneering the applications of BN into functional devices. Finally, the progress in BN superstructures and novel B/N nanostructures is also briefly introduced.

  18. Ultrahard nanotwinned cubic boron nitride.

    Science.gov (United States)

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan

    2013-01-17

    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  19. Powdered Hexagonal Boron Nitride Reducing Nanoscale Wear

    Science.gov (United States)

    Chkhartishvili, L.; Matcharashvili, T.; Esiava, R.; Tsagareishvili, O.; Gabunia, D.; Margiev, B.; Gachechiladze, A.

    2013-05-01

    A morphology model is suggested for nano-powdered hexagonal boron nitride that can serve as an effective solid additive to liquid lubricants. It allows to estimate the specific surface, that is a hard-to-measure parameter, based on average size of powder particles. The model can be used also to control nanoscale wear processes.

  20. Adsorption of carbon dioxide (CO2) at S functionalized boron nitride (BN) and aluminum nitride (AlN) nanotubes (9, 0): A quantum chemical investigation

    Science.gov (United States)

    Najafi, Meysam

    2016-10-01

    We employed density functional theory to characterize CO2 adsorption on BNNT and AlNNT surfaces. The effects of S functionalization on the adsorption of CO2 gas on BNNT and AlNNT surfaces were investigated. Results reveal that adsorptions of CO2 on studied nanotubes were exothermic and experimentally possible from the energetic viewpoint. Results show that, Ead values of CO2 on AlNNT surface were more negative than corresponding values of BNNT. Results reveal that, S functionalization of studied nanotubes causes an increase in the absolute values of Ead of CO2 on surface of studied nanotubes. These results show that, there are good linearity dependencies between Ead and orbital energy values of studied nanotubes. Therefore we can conclude the Ead and orbital energy values are highly sensitive to the adsorption process which these may be used for the selection the suitable nanotubes with enhanced CO2 adsorption potential.

  1. Adsorption of carbon dioxide (CO{sub 2}) at S functionalized boron nitride (BN) and aluminum nitride (AlN) nanotubes (9, 0): A quantum chemical investigation

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, Meysam, E-mail: meysamnajafi2016@yahoo.com

    2016-10-30

    Highlights: • AlN-NT has higher potential to CO{sub 2} adsorption in comparison to BN-NT. • S functionalization of studied nanotubes improve the CO{sub 2} adsorption ability of them. • E{sub ad} is suitable scale to propose the novel toxic gas sensor based on nanostructured. • E{sub ad} and E{sub HLG} of studied nanotubes have linear dependences. - Abstract: We employed density functional theory to characterize CO{sub 2} adsorption on BNNT and AlNNT surfaces. The effects of S functionalization on the adsorption of CO{sub 2} gas on BNNT and AlNNT surfaces were investigated. Results reveal that adsorptions of CO{sub 2} on studied nanotubes were exothermic and experimentally possible from the energetic viewpoint. Results show that, E{sub ad} values of CO{sub 2} on AlNNT surface were more negative than corresponding values of BNNT. Results reveal that, S functionalization of studied nanotubes causes an increase in the absolute values of E{sub ad} of CO{sub 2} on surface of studied nanotubes. These results show that, there are good linearity dependencies between E{sub ad} and orbital energy values of studied nanotubes. Therefore we can conclude the E{sub ad} and orbital energy values are highly sensitive to the adsorption process which these may be used for the selection the suitable nanotubes with enhanced CO{sub 2} adsorption potential.

  2. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  3. The effect of C atom concentration on the electronic properties of boron carbonitride alloy nanotube in zig-zag form

    Indian Academy of Sciences (India)

    H Milani Moghaddam

    2011-06-01

    Electronic properties of single-walled boron nitride nanotube in zig-zag form are numerically investigated by replacing B atoms with C atoms. Using a tight-binding Hamiltonian, the methods based on Green’s function theory, Landauer formalism and Dyson equation, the electronic density of states and electronic conductance in boron nitride nanotube and boron carbonitride nanotube are calculated. Our calculations indicate that in a boron nitride nanotube, the localized states associated with C impurities appear as the concentration of C atoms increases. The boron carbonitride nanotube thus behaves like a semiconductor. Also, by increasing the C atom concentration, the voltage in the first step on the – characteristics decreases, whereas the corresponding current increases.

  4. Ab initio investigation of Al- and Ga-doped single-walled boron nitride nanotubes as ammonia sensor

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: Alireza.soltani46@yahoo.com [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Raz, Shima Ghafouri [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Rezaei, Vahid Joveini [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Dehno Khalaji, Aliakbar [Department of Chemistry, Faculty of Science, Golestan University, Gorgan (Iran, Islamic Republic of); Savar, Mohammad [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer The electronic properties of NH{sub 3} on Al- and Ga-doped (8, 0) and (5, 5) BNNT are studied. Black-Right-Pointing-Pointer The adsorption energy for NH{sub 3} on Al-doped (8, 0) BNNT is higher than that of Ga-doped (8, 0) BNNT. Black-Right-Pointing-Pointer The relation between adsorption energy and charge transfer was investigated. - Abstract: We performed first-principles calculations on the ammonia (NH{sub 3}) adsorption properties with zigzag and armchair single-walled BN nanotubes (SWBNNTs) using B3LYP/6-31G* basis set implemented in Gaussian 98 program. We considered the ammonia adsorption on structural and electronic properties of Al- and Ga-doped (8, 0), (5, 5) BNNTs. The adsorption energy for the most stable configuration of NH{sub 3} on Al-doped (8, 0) BNNT is about -0.182 eV, which is typical for the chemisorptions. We determined that both aluminum and gallium doping can significantly enhance the adsorption energy of NH{sub 3}/BNNTs complexes. Our electronic results reveal that there is a significant orbital hybridization between two species in adsorption process being an evidence of covalent interaction.

  5. Oxygen radical functionalization of boron nitride nanosheets.

    Science.gov (United States)

    Sainsbury, Toby; Satti, Amro; May, Peter; Wang, Zhiming; McGovern, Ignatius; Gun'ko, Yurii K; Coleman, Jonathan

    2012-11-14

    The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution-phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalization of the groups to yield hydroxyl-functionalized BNNSs (OH-BNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-vis, FTIR, NMR, and TGA was performed to investigate both the structure of the BNNSs and the covalent functionalization methodology. OH-BNNSs were used to prepare polymer nanocomposites and their mechanical properties analyzed. The influence of the functional groups grafted to the surface of the BNNSs is investigated by demonstrating the impact on mechanical properties of both noncovalent and covalent bonding at the interface between the nanofiller and polymer matrixes.

  6. Phase diagrams and synthesis of cubic boron nitride

    CERN Document Server

    Turkevich, V Z

    2002-01-01

    On the basis of phase equilibria, the lowest temperatures, T sub m sub i sub n , above which at high pressures cubic boron nitride crystallization from melt solution is allowable in terms of thermodynamics have been found for a number of systems that include boron nitride.

  7. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  8. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

    Science.gov (United States)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

    1997-01-01

    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  9. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  10. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  11. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films

    Science.gov (United States)

    2014-01-09

    Synthesis 1. Diborane- ammonia (B2H6-NH3- gases): Early results with these precursors were published in 2012. 5 Briefly, LPCVD growth of h-BN in a hot-wall...Approved for public release; distribution is unlimited. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. The views, opinions and...1 ABSTRACT Number of Papers published in peer-reviewed journals: Synthesis and Characterization of Hexagonal Boron Nitride (h-BN) Films. Report Title

  12. Immunosuppressive agent leflunomide: a SWNTs-immobilized dihydroortate dehydrogenase inhibitory effect and computational study of its adsorption properties on zigzag single walled (6,0) carbon and boron nitride nanotubes as controlled drug delivery devices.

    Science.gov (United States)

    Raissi, Heidar; Mollania, Fariba

    2014-06-02

    Leflunomide [HWA 486 or RS-34821, 5-methyl-N-(4trifluoromethylphenyl)-4-isoxazole carboximide] is an immunosuppressive agent effective in the treatment of rheumatoid arthritis. Dihydroortate dehydrogenase (DHODH, EC 1.3.3.1) immobilization on the nanotubes was carried out and biochemical characterization of free and immobilized enzyme was determined. In comparison with free enzyme, the immobilized DHODH showed improved stability and reusability for investigation of inhibition pattern of drugs such as leflunomide. The experimental data showed that, DHODH was inhibited by the active metabolite of leflunomide (RS-61980) with a Ki and KI of 0.82 and 0.06 mM, respectively. Results exhibited mixed-type inhibition kinetics towards dihydroorotate as a substrate in the free and immobilized enzyme. Furthermore, the behavior of anticancer drug leflunomide adsorbed on the external surface of zigzag single walled (6,0) carbon and boron nitride nanotubes (SWCNT and SWBNNT) was studied by means of DFT calculations at the B3LYP/6-31G(*) level of theory. The larger adsorption energies and charges transfer showed that the adsorption of leflunomide onto SWBNNT is more stable than that the adsorption of leflunomide onto SWCNT. Frontier molecular orbitals (HOMO and LUMO) suggest that adsorption of leflunomide onto SWBNNT behave as charge transfer compounds with leflunomide as an electron donor and SWBNNT as an electron acceptor. Thus, nanotubes (NTs) have been proposed and actively explored as multipurpose innovative carriers for drug delivery and diagnostic application. The AIM theory has been also applied to analyze the properties of the bond critical points: their electron densities and their laplacians. Also, the natural bond orbital (NBO) calculations were performed to derive natural atomic orbital occupancies, and partial charges of the interacting atoms in the equilibrium tube-molecule distance.

  13. Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy

    Science.gov (United States)

    Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

    2016-10-01

    Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT.

  14. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  15. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  16. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  17. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  18. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    Science.gov (United States)

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea.

  19. Manipulation et fonctionnalisation de nanotube : Application aux nanotubes de nitrure de bore.

    OpenAIRE

    2007-01-01

    Boron nitride nanotubes are new tubular materials which are structurally related to carbon nanotubes and are made of one or several rolled-up hexagonal boron nitride sheets. Nanoelectronics, material science and medicine are among the potential application fields of these tubular structures. Single-walled boron nitride nanotubes (SWBNNTs) are being produced by continuous LASER ablation at the ONERA. The crude samples contain SWBNNTs and boron nitride cages but are also contaminated by boric a...

  20. Ceramic processing of boron nitride insulators

    Energy Technology Data Exchange (ETDEWEB)

    Morgan, C. S.; McCulloch, R. W.

    1977-01-01

    Fuel pin simulators (FPS) are the prime elements of several test facilities at the Oak Ridge National Laboratory (ORNL). These experimental facilities are used to conduct out-of-reactor thermal-hydraulic and mechanical interaction safety tests for both light-water and breeder reactor programs. The FPS units simulate the geometry, heat flux profiles, and operational capabilities of a reactor core element under steady-state and transient conditions. They are subjected to temperatures as high as 1600/sup 0/C (2900/sup 0/F) and power levels as high as 57.5 kW/m (17.5 kW/ft) as well as severe thermal stresses during transient tests. The insulating material in the narrow annulus between the heating coil and the FPS sheath is subjected to very rigorous conditions. Accuracy of the reactor safety test information and validity of the test data depend on the heat flux uniformity under all test conditions and on the reliable operation of all fuel pin simulators and their internal thermocouples. Boron nitride (BN), because of its high degree of chemical inertness combined with its relatively unique properties of high thermal conductivity and low electrical conductivity, is the most suitable insulating material for FPS. The important BN properties, thermal conductivity and electrical resistance, are strongly influenced by crystallite orientation and by impurities. The article describes new BN powder processing techniques, which optimize these properties.

  1. Hexagonal boron-nitride nanomesh magnets

    Science.gov (United States)

    Ohata, C.; Tagami, R.; Nakanishi, Y.; Iwaki, R.; Nomura, K.; Haruyama, J.

    2016-09-01

    The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure of edges of 2D atom-thin materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated graphene nanomeshes (NMs), and few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM in few-layer hexagonal boron-nitride (hBN) NMs. O-terminated hBNNMs annealed at 500 °C show the largest FM, while it completely disappears in H-terminated hBNNMs. When hBNNMs are annealed at other temperatures, amplitude of the FM significantly decreases. These are highly in contrast to the case of graphene NMs but similar to the cases of black phosphorus NM and suggest that the hybridization of the O atoms with B(N) dangling bonds of zigzag pore edges, formed at the 500 °C annealing, strongly contribute to this edge FM. Room-temperature FM realizable only by exposing hBNNMs into air opens the way for high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements.

  2. Hyperbolic phonon polaritons in hexagonal boron nitride

    Science.gov (United States)

    Dai, Siyuan

    2015-03-01

    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [Science, 343, 1125-1129 (2014)]. Additionally, we carried out the modification of hyperbolic response in heterostructures comprised of a mononlayer graphene deposited on hBN. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the ``hyperlens'' for subdiffractional imaging and focusing using a slab of hBN.

  3. Porous Boron Nitride with Tunable Pore Size.

    Science.gov (United States)

    Dai, Jun; Wu, Xiaojun; Yang, Jinlong; Zeng, Xiao Cheng

    2014-01-16

    On the basis of a global structural search and first-principles calculations, we predict two types of porous boron-nitride (BN) networks that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs are either directly connected with puckered B (N) atoms at the edge (type I) or connected with sp(3)-bonded BN chains (type II). Besides mechanical stability, these materials are predicted to be thermally stable at 1000 K. The porous BN materials entail large surface areas, ranging from 2800 to 4800 m(2)/g. In particular, type-II BN material with relatively large pores is highly favorable for hydrogen storage because the computed hydrogen adsorption energy (-0.18 eV) is very close to the optimal adsorption energy (-0.15 eV) suggested for reversible hydrogen storage at room temperature. Moreover, the type-II materials are semiconductors with width-dependent direct bandgaps, rendering the type-II BN materials promising not only for hydrogen storage but also for optoelectronic and photonic applications.

  4. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  5. Nanotube phonon waveguide

    Science.gov (United States)

    Chang, Chih-Wei; Zettl, Alexander K.

    2013-10-29

    Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

  6. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse;

    Experimental core electron density of cubic boron nitride Nanna Wahlberg*, Niels Bindzus*, Lasse Bjerg*, Jacob Becker*, and Bo B. Iversen* *Aarhus University, Department of Chemistry, CMC, Langelandsgade 140, 8000 Århus, Denmark The resent progress in powder diffraction provides data of quality...... beyond multipolar modeling of the valence density. As was recently shown in a benchmark study of diamond by Bindzus et al.1 The next step is to investigate more complicated chemical bonding motives, to determine the effect of bonding on the core density. Cubic boron nitride2 lends itself as a perfect...... candidate because of its many similarities with diamond: bonding pattern in the extended network structure, hardness, and the quality of the crystallites.3 However, some degree ionic interaction is a part of the bonding in boron nitride, which is not present in diamond. By investigating the core density...

  7. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  8. NOVEL SALTS OF GRAPHITE AND A BORON NITRIDE SALT

    Energy Technology Data Exchange (ETDEWEB)

    Bartlett, Neil; Biagioni, R.N.; McQuillan, B.W.; Robertson, A.S.; Thompson, A.C

    1977-12-01

    Graphite is oxidized by O{sub 2}{sup +} AsF{sub 6}{sup -} and by OsF{sub 6} to give first-stage graphite salts C{sub 8}{sup +} MF{sub 6}{sup -} and S{sub 2}O{sub 6}F{sub 2} oxidizes both graphite and boron nitride to yield the salts C{sub 12}{sup +} SO{sub 3}F{sup -} and (BN){sub 4}{sup +} SO{sub 3}F{sup -}, the latter being the first example of a first-stage boron nitride salt.

  9. A path for synthesis of boron-nitride nanostructures in volume of arc plasma

    Science.gov (United States)

    Han, Longtao; Krstić, Predrag

    2017-02-01

    We find a possible channel for direct nanosynthesis of boron-nitride (BN) nanostructures, including growth of BN nanotubes from a mixture of BN diatomic molecules by quantum-classical molecular dynamics simulations. No catalyst or boron nanoparticle is needed for this synthesis, however the conditions for the synthesis of each of the nanostructures, such as temperature and flux of the BN feedstock are identified and are compatible with the conditions in an electric arc at high pressure. We also find that BN nanostructures can be synthetized by feeding a boron nanoparticle by BN diatomic molecules, however if hydrogen rich molecules like NH3 or HBNH are used as a feedstock, two-dimensional nanoflake stable structures are formed.

  10. Turbostratic boron nitride coated on high-surface area metal oxide templates

    DEFF Research Database (Denmark)

    Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

    2007-01-01

    Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

  11. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c

  12. Studying the effects of the configuration of doped Al atoms on the conductive properties of boron nitride nanotube using density functional theory

    Science.gov (United States)

    Tavangar, Zahra; Hamadanian, Masood; Basharnavaz, Hadi

    2017-02-01

    In this paper, we study the effects of the configuration of two Al atoms doped into the unit cell of (7, 0) BNNTs, on their structural and electronic properties in solid state using density functional theory methods. Also, all possible configurations for Al double doped (7, 0) BNNT were investigated. The results showed that with Al doping, band gap decreased. Furthermore, an impurity state appears near the Fermi level when two Al atoms replace two boron atoms of adjacent layers. Contour plots of charge density distribution showed a protuberance surrounding N and B atoms adjacent to the substitute Al atoms.

  13. Preparation and characterization of boron nitride/carbon fiber composite with high specific surface area

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yan; Fan, Mingwen [Wuhan Univ. (China). Key Laboratory for Oral Biomedical Engineering; Yuan, Songdong; Xiong, Kun; Hu, Kunpeng; Luo, Yi [Hubei Univ. of Technology, Wuhan (China). School of Chemistry and Chemical Engineering; Li, Dong [Hubei Univ. of Technology, Wuhan (China). School of Chemistry and Chemical Engineering; Oxford Univ. (United Kingdom). Chemistry Research Lab.

    2014-06-15

    Boron nitride can be used as a good catalyst carrier because of its high thermal conductivity and chemical stability. However, a high specific surface area of boron nitride is still desirable. In this work, a carbon fiber composite coated with boron nitride villous nano-film was prepared, and was also characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and Brunauer-Emmett-Teller analysis. The results indicated that the carbon fibers were covered by uniform villous boron nitride films whose thickness was about 150 - 200 nm. The specific surface area of the boron nitride/carbon fiber composite material was 96 m{sup 2} g{sup -1}, which was markedly improved compared with conventional boron nitride materials. (orig.)

  14. Neutron detection using boron gallium nitride semiconductor material

    OpenAIRE

    Katsuhiro Atsumi; Yoku Inoue; Hidenori Mimura; Toru Aoki; Takayuki Nakano

    2014-01-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in ...

  15. Observation of viscoelasticity in boron nitride nanosheet aerogel.

    Science.gov (United States)

    Zeng, Xiaoliang; Ye, Lei; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2015-07-14

    The viscoelasticity of boron nitride nanosheet (BNNS) aerogel has been observed and investigated. It is found that the BNNS aerogel has a high damping ratio (0.2), while it exhibits lightweight and negligible temperature dependence below 180 °C. The creep behavior of the BNNS aerogel markedly demonstrates its strain dependence on stress magnitude and temperature, and can be well simulated by the classical models.

  16. Electronic structure of spontaneously strained graphene on hexagonal Boron Nitride

    OpenAIRE

    San-Jose, Pablo; Gutiérrez, Ángel; Sturla, Mauricio; Guinea, Francisco

    2014-01-01

    Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions develop in graphene due to the moir\\'e adhesion landscape. Simultaneously a gap opens at the Dirac point. Here we derive a simple low energy model for graphene carriers close to alignment with the substrate, taking into account spontaneous strains at equilib...

  17. Method for forming monolayer graphene-boron nitride heterostructures

    Science.gov (United States)

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2016-08-09

    A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

  18. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    OpenAIRE

    2014-01-01

    Poly-crystalline cubic boron nitride (PCBN) is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM) is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materia...

  19. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    CERN Document Server

    Nistor, L C; Dinca, G; Georgeoni, P; Landuyt, J V; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp sup 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m sup - sup 2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD di...

  20. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  1. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  2. Hollow boron nitride nanospheres as boron reservoir for prostate cancer treatment

    Science.gov (United States)

    Li, Xia; Wang, Xiupeng; Zhang, Jun; Hanagata, Nobutaka; Wang, Xuebin; Weng, Qunhong; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2017-01-01

    High global incidence of prostate cancer has led to a focus on prevention and treatment strategies to reduce the impact of this disease in public health. Boron compounds are increasingly recognized as preventative and chemotherapeutic agents. However, systemic administration of soluble boron compounds is hampered by their short half-life and low effectiveness. Here we report on hollow boron nitride (BN) spheres with controlled crystallinity and boron release that decrease cell viability and increase prostate cancer cell apoptosis. In vivo experiments on subcutaneous tumour mouse models treated with BN spheres demonstrated significant suppression of tumour growth. An orthotopic tumour growth model was also utilized and further confirmed the in vivo anti-cancer efficacy of BN spheres. Moreover, the administration of hollow BN spheres with paclitaxel leads to synergetic effects in the suppression of tumour growth. The work demonstrates that hollow BN spheres may function as a new agent for prostate cancer treatment.

  3. DFT Studies on Electronic Structures of Boro-Nitride-Carbon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; HUANG Chun-Hui

    2005-01-01

    In this paper, the configurations of Boro-Nitride-Carbon nanotubes with BNC2 composition were optimized by ROHF method. According to the density functional theory, the electronic structures of Boro-Nitride-Carbon nanotubes were calculated by DFT/ROB3LYP method. By analyzing the energy gap, density of electronic state and bonding maps of atoms, the conductive properties of Boro-Nitride-Carbon nanotubes were obtained, and compared with those of carbon nanotubes and other Boro-Nitride nanotubes.

  4. Boron Nitride sheet as a novel surface for medical adsorption and drug synthesis

    OpenAIRE

    M. Zawari

    2015-01-01

    In this study we investigate Adenine, Guanine, Cytosine and Thymine moleculesadsorption on Boron Nitride by Density-functional theory (DFT). For this purpose we calculate adsorption energy (∆Ead), HOMO- LUMO energy gap(∆Eg), voltage difference (∆V) and (∆q) of Adenine, Guanine, Cytosine and Thymine molecules on different adsorption distances on Boron Nitride layer and compare them.

  5. Friction and transfer behavior of pyrolytic boron nitride in contact with various metals

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted with pyrolytic boron nitride in sliding contact with itself and various metals. Auger emission spectroscopy was used to monitor transfer of pyrolytic boron nitride to metals and metals to pyrolytic boron nitride. Results indicate that the friction coefficient for pyrolytic boron nitride in contact with metals can be related to the chemical activity of the metals and more particularly to the d valence bond character of the metal. Transfer was found to occur to all metals except silver and gold and the amount of transfer was less in the presence than in the absence of metal oxide. Friction was less for pyrolytic boron nitride in contact with a metal in air than in vacuum.

  6. Synthesis of boron nitride from boron containing poly(vinyl alcohol) as ceramic precursor

    Indian Academy of Sciences (India)

    M Das; S Ghatak

    2012-02-01

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD).

  7. Neutron detection using boron gallium nitride semiconductor material

    Directory of Open Access Journals (Sweden)

    Katsuhiro Atsumi

    2014-03-01

    Full Text Available In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  8. Neutron detection using boron gallium nitride semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  9. Low-Cost Preparation of Boron Nitride Ceramic Powders

    Institute of Scientific and Technical Information of China (English)

    LI Duan; ZHANG Changrui; LI Bin; CAO Feng; WANG Siqing; LIU Kun; FANG Zhenyu

    2012-01-01

    The amorphous boron nitride ceramic powders were prepared at 750-950 ℃ by the lowcost urea route,and the effects of preparation temperatures,molar ratios of the raw materials and oxidation treatment on the composition,structure and surface morphology of the products were investigated through FTIR,XRD and SEM.The results show that the products ceramize and crystallize gradually with the increase of the temperature.When the molar ratio and reaction temperature are 3:2 and 850 ℃,respectively,the products have high purity,compact structure and nice shape.The oxidation treatment at 450 ℃ will not impair the composition and structure of boron nitfide but effectively remove the impurities.

  10. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  11. Properties of atomic intercalated boron nitride K4 type crystals

    OpenAIRE

    Itoh, Masahiro; Takami, Seiichi; Kawazoe, Yoshiyuki; Adschiri, Tadafumi

    2010-01-01

    The stability of atomic intercalated boron nitride K4 crystal structures, XBN (X=H, Li, Be, B, C, N, O, F, Na, Mg, Al, Si, P, S, Cl, K, Ca, Ga, Ge, As, Se, Br, Rb or Sr) is evaluated by the geometric optimization and frozen phonon calculations based on the first principles calculations. NaBN, MgBN, GaBN, FBN and ClBN are found to be stable. NaBN, GaBN, FBN and ClBN are metallic, whereas MgBN is semiconducting.

  12. Boron nitride: A high potential support for combustion catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Postole, G. [Institut de Recherches sur la Catalyse, CNRS, 69626 Villeurbanne Cedex (France); ' I.G.Murgulescu' Institute of Physical Chemistry of the Romanian Academy Spl. Independentei 202, 060041 Bucharest (Romania); Caldararu, M. [' I.G.Murgulescu' Institute of Physical Chemistry of the Romanian Academy Spl. Independentei 202, 060041 Bucharest (Romania); Ionescu, N.I. [' I.G.Murgulescu' Institute of Physical Chemistry of the Romanian Academy Spl. Independentei 202, 060041 Bucharest (Romania); Bonnetot, B. [Laboratoire des Multimateriaux et Interfaces, UMR CNRS 5615, bat Berthollet, UCB Lyon I, 69622 Villeurbanne Cedex (France); Auroux, A. [Institut de Recherches sur la Catalyse, CNRS, 69626 Villeurbanne Cedex (France)]. E-mail: auroux@catalyse.cnrs.fr; Guimon, C. [LCPM, 2 Av. President Angot, 64053 Pau Cedex 9 (France)

    2005-08-15

    High surface area BN powders have been prepared from different precursors to be used as supports for noble metal catalysts. The more suitable boron nitride powders were obtained using polytrichoroborazine, pTCB, as precursor, leading to a surface area higher than 150 m{sup 2}/g. The BN powders were characterized by XRD, XPS, TG, SEM and adsorption microcalorimetry measurements (aniline and ammonia). The preliminary results showed a remarkable stability of the BN supports, even in the presence of moisture. Palladium impregnation of the BN powders was performed using a classical method and the obtained catalysts exhibited a high dispersion with Pd particles of about 4 nm.

  13. Exciton optical transitions in a hexagonal boron nitride single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Museur, L. [Laboratoire de Physique des Lasers - LPL, CNRS UMR 7538, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Brasse, G.; Maine, S.; Ducastelle, F.; Loiseau, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); Pierret, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); CEA-CNRS, Institut Neel/CNRS, Universite J. Fourier, CEA/INAC/SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex 9 (France); Attal-Tretout, B. [ONERA - Departement Mesures Physiques - DMPh, 27 Chemin de la Huniere, 91761 Palaiseau Cedex (France); Barjon, J. [GEMaC, Universite de Versailles St Quentin, CNRS Bellevue, 1 Place Aristide Briand, 92195 Meudon Cedex (France); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Kanaev, A. [Laboratoire des Sciences des Procedes et des Materiaux - LSPM, CNRS UPR 3407, Universite Paris 13, 93430 Villetaneuse (France)

    2011-06-15

    Near band gap photoluminescence (PL) of a hexagonal boron nitride single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by trapped-exciton optical transitions, while the photoluminescence excitation (PLE) spectra show features assigned to free excitons. Complementary photoconductivity and PLE measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  15. Corrosion resistance of monolayer hexagonal boron nitride on copper

    Science.gov (United States)

    Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.

    2017-02-01

    Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating.

  16. Cellulose nanofibrils (CNF) filled boron nitride (BN) nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Sulaiman, Hanisah Syed; Hua, Chia Chin; Zakaria, Sarani [School of Applied Physic, Faculty of Science and Technology, Universiti Kebangsaan Malaysia.43600 Bangi, Selangor (Malaysia)

    2015-09-25

    In this study, nanocomposite using cellulose nanofibrils filled with different percentage of boron nitride (CNF-BN) were prepared. The objective of this research is to study the effect of different percentage of BN to the thermal conductivity of the nanocomposite produced. The CNF-BN nanocomposite were characterization by FT-IR, SEM and thermal conductivity. The FT-IR analysis of the CNF-BN nanocomposite shows all the characteristic peaks of cellulose and BN present in all samples. The dispersion of BN in CNF were seen through SEM analysis. The effect of different loading percentage of BN to the thermal conductivity of the nanocomposite were also investigated.

  17. Research on the Cutting Performance of Cubic Boron Nitride Tools

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    There were only two kinds of superhard tool material at the past, i.e. diamond and cubic boron nitride (CBN). Manmade diamond and CBN are manufactured by the middle of 20th century. Various manufacturing methods and manmade superhard materials were developed later. They were widely used in different industry and science areas. Recently, a new kind of superhard tool material, C 3N 4 coating film, had been developed. American physical scientists, A. M. Liu and M. L. Cohen, designed a new kind of inorganic c...

  18. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  19. Molecular dynamics of halogenated graphene - hexagonal boron nitride nanoribbons

    Science.gov (United States)

    Nemnes, G. A.; Visan, Camelia; Anghel, D. V.; Manolescu, A.

    2016-08-01

    The hybrid graphene - hexagonal boron nitride (G-hBN) systems offer new routes in the design of nanoscale electronic devices. Using ab initio density functional theory calculations we investigate the dynamics of zig-zag nanoribbons a few interatomic distances wide. Several structures are analyzed, namely pristine graphene, hBN and G-hBN systems. By passivating the nanoribbon edges with hydrogen and different halogen atoms, one may tune the electronic and mechanical properties, like the band gap energies and the natural frequencies of vibration.

  20. Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

    Science.gov (United States)

    Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

    2016-05-11

    Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

  1. Band gap effects of hexagonal boron nitride using oxygen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  2. Toward Edge-Defined Holey Boron Nitride Nanosheets

    Science.gov (United States)

    Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

    2015-01-01

    "Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

  3. Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity.

    Science.gov (United States)

    Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2016-01-19

    Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets' interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation.

  4. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  5. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  6. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  7. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  8. Piezoelectricity in planar boron nitride via a geometric phase

    Science.gov (United States)

    Droth, Matthias; Burkard, Guido; Pereira, Vitor M.

    2016-08-01

    Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of hexagonal boron nitride (hBN) are occupied by different elements, which breaks inversion symmetry and allows for piezoelectricity. This has been confirmed with density functional theory calculations of the piezoelectric constant of hBN. Here, we formulate an entirely analytical derivation of the electronic contribution to the piezoelectric response in this system based on the concepts of strain-induced pseudomagnetic vector potential and the modern theory of polarization that relates the polar moment to the Berry curvature. Our findings agree with the symmetry restrictions expected for the hBN lattice and reproduce well the magnitude of the piezoelectric effect previously obtained ab initio.

  9. Physics behind Water Transport through Nanoporous Boron Nitride and Graphene.

    Science.gov (United States)

    Garnier, Ludovic; Szymczyk, Anthony; Malfreyt, Patrice; Ghoufi, Aziz

    2016-09-01

    In this work, molecular dynamics simulations were used to determine the surface tension profile of water on graphene and boron nitride (BN) multilayers and to predict water permeation through nanoporous graphene and BN membranes. For both graphene and BN multilayers, a decrease in surface tension (γ) was evidenced as the number of layers increased. This lessening in γ was shown to result from a negative surface tension contribution due to long-range wetting of water, which also contributes to lower water permeation through a two-layer membrane with respect to permeation through a monolayer. We also showed that a decrease in water surface tension on a BN monolayer with regards to graphene was at the origin of an increase in water permeation through BN. Our findings suggest that nanoporous BN membranes could be attractive candidates for desalination applications.

  10. First-principles modeling hydrogenation of bilayered boron nitride

    Science.gov (United States)

    Jing, Wang; Peng, Zhang; Xiang-Mei, Duan

    2016-05-01

    We have investigated the structural and electronic characteristics of hydrogenated boron-nitride bilayer (H-BNBN-H) using first-principles calculations. The results show that hydrogenation can significantly reduce the energy gap of the BN-BN into the visible-light region. Interestingly, the electric field induced by the interface dipoles helps to promote the formation of well-separated electron-hole pairs, as demonstrated by the charge distribution of the VBM and CBM. Moreover, the applied bias voltage on the vertical direction of the bilayer could modulate the band gap, resulting in transition from semiconductor to metal. We conclude that H-BNBN-H could improve the solar energy conversion efficiency, which may provide a new way for tuning the electronic devices to meet different environments and demands. Project supported by the National Natural Science Foundation of China (Grant No. 11574167).

  11. Ultraviolet dielectric hyperlens with layered graphene and boron nitride

    CERN Document Server

    Wang, Junxia; Zhang, Baile

    2012-01-01

    The concept of hyperlens, as a novel transformation optics device, is a promising real-time super-resolution lens that can effectively transform evanescent waves into propagating waves and thus break the diffraction limit. However, previous hyperlens implementations usually adopted metal which would absorb most energy during light transmission and thus deteriorate imaging efficiency. Here we propose a novel hyperlens design based on dielectric layered graphene and h-boron nitride (h-BN) whose performance can surpass the counterpart design with metal. Our first-principle and Kramers-Kronig relation calculation shows that both layered graphene and layered h-BN exhibit strong anisotropic properties in ultraviolet spectrum regions, where their permittivity components perpendicular to the optic axis can be negative while the components parallel to the optic axis can be positive. Based on the anisotropic properties, flat and cylindrical hyperlenses are designed and numerically verified with layered graphene at 1200...

  12. Electron tunneling through ultrathin boron nitride crystalline barriers.

    Science.gov (United States)

    Britnell, Liam; Gorbachev, Roman V; Jalil, Rashid; Belle, Branson D; Schedin, Fred; Katsnelson, Mikhail I; Eaves, Laurence; Morozov, Sergey V; Mayorov, Alexander S; Peres, Nuno M R; Neto, Antonio H Castro; Leist, Jon; Geim, Andre K; Ponomarenko, Leonid A; Novoselov, Kostya S

    2012-03-14

    We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

  13. Structure and energetics of nanotwins in cubic boron nitrides

    Science.gov (United States)

    Zheng, Shijian; Zhang, Ruifeng; Huang, Rong; Taniguchi, Takashi; Ma, Xiuliang; Ikuhara, Yuichi; Beyerlein, Irene J.

    2016-08-01

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  14. Fabrication of hexagonal boron nitride based ceramics by combustion synthesis

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Pure h-BN (hexagonal boron nitride) and h-BN based ceramic parts were fabricated by combustion synthesis technique, i.e. self-propagating high-temperature synthesis (SHS). Components were manufactured by the combustion reaction of 80  MPa nitrogen and the compact made by cool isostatic pressing. In h-BN based ceramic parts, h-BN powder was used as diluent and SiO2 powder as reinforcing phase. The density of pure h-BN and h-BN-based ceramic parts were 58% and 78% of theoretical density, respectively. With XRD and SEM, phases and microstructures of ceramic parts were analyzed. Mechanical properties were also tested.

  15. Transverse electric surface mode in atomically thin Boron-Nitride

    CERN Document Server

    Merano, Michele

    2016-01-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  16. Submicron cubic boron nitride as hard as diamond

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guoduan; Kou, Zili, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Lei, Li; Peng, Fang; Wang, Qiming; Wang, Kaixue; Wang, Pei; Li, Liang; Li, Yong; Wang, Yonghua [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Yan, Xiaozhi, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Li, Wentao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Bi, Yan [Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Leng, Yang [Department of Mechanical Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China); He, Duanwei [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-03-23

    Here, we report the sintering of aggregated submicron cubic boron nitride (sm-cBN) at a pressure of 8 GPa. The sintered cBN compacts exhibit hardness values comparable to that of single crystal diamond, fracture toughness about 5-fold that of cBN single crystal, in combination with a high oxidization temperature. Thus, another way has been demonstrated to improve the mechanical properties of cBN besides reducing the grain size to nano scale. In contrast to other ultrahard compacts with similar hardness, the sm-cBN aggregates are better placed for potential industrial application, as their relative low pressure manufacturing perhaps be easier and cheaper.

  17. Electronic structure of spontaneously strained graphene on hexagonal boron nitride

    Science.gov (United States)

    San-Jose, Pablo; Gutiérrez-Rubio, A.; Sturla, Mauricio; Guinea, Francisco

    2014-09-01

    Hexagonal boron nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions develop in graphene due to the moiré adhesion landscape. Simultaneously, a gap opens at the Dirac point. Here, we derive a simple low-energy electronic model for graphene aligned with the substrate, taking into account spontaneous strains at equilibrium and pseudogauge fields. We carry out a detailed characterization of the modified band structure, gap, local and global density of states, and band topology in terms of physical parameters. We show that the overall electronic structure is strongly modified by the spontaneous strains.

  18. Thermal conductance of graphene/hexagonal boron nitride heterostructures

    Science.gov (United States)

    Lu, Simon; McGaughey, Alan J. H.

    2017-03-01

    The lattice-based scattering boundary method is applied to compute the phonon mode-resolved transmission coefficients and thermal conductances of in-plane heterostructures built from graphene and hexagonal boron nitride (hBN). The thermal conductance of all structures is dominated by acoustic phonon modes near the Brillouin zone center that have high group velocity, population, and transmission coefficient. Out-of-plane modes make their most significant contributions at low frequencies, whereas in-plane modes contribute across the frequency spectrum. Finite-length superlattice junctions between graphene and hBN leads have a lower thermal conductance than comparable junctions between two graphene leads due to lack of transmission in the hBN phonon bandgap. The thermal conductances of bilayer systems differ by less than 10% from their single-layer counterparts on a per area basis, in contrast to the strong thermal conductivity reduction when moving from single- to multi-layer graphene.

  19. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.

    Science.gov (United States)

    Weng, Qunhong; Wang, Xuebin; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2016-07-11

    Functionalization is an important way to breed new properties and applications for a material. This review presents an overview of the progresses in functionalized hexagonal boron nitride (h-BN) nanomaterials. It begins with an introduction of h-BN structural features, physical and chemical properties, followed by an emphasis on the developments of BN functionalization strategies and its emerging properties/applications, and ends with the research perspectives. Different functionalization methods, including physical and chemical routes, are comprehensively described toward fabrication of various BN derivatives, hetero- and porous structures, etc. Novel properties of functionalized BN materials, such as high water solubility, excellent biocompatibility, tunable surface affinities, good processibility, adjustable band gaps, etc., have guaranteed wide applications in biomedical, electronic, composite, environmental and "green" energy-related fields.

  20. Boron Nitride sheet as a novel surface for medical adsorption and drug synthesis

    Directory of Open Access Journals (Sweden)

    M. Zawari

    2015-03-01

    Full Text Available In this study we investigate Adenine, Guanine, Cytosine and Thymine moleculesadsorption on Boron Nitride by Density-functional theory (DFT. For this purpose we calculate adsorption energy (∆Ead, HOMO- LUMO energy gap(∆Eg, voltage difference (∆V and (∆q of Adenine, Guanine, Cytosine and Thymine molecules on different adsorption distances on Boron Nitride layer and compare them.

  1. Electronic properties of Mn-decorated silicene on hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-12-17

    We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

  2. Thermal conductivity of polymer composites with oriented boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Hong Jun; Eoh, Young Jun [Department of Materials Engineering, Kyonggi University, Suwon (Korea, Republic of); Park, Sung Dae [Electronic Materials and Device Research Center, Korea Electronics Technology Institute, Seongnam (Korea, Republic of); Kim, Eung Soo, E-mail: eskim@kyonggi.ac.kr [Department of Materials Engineering, Kyonggi University, Suwon (Korea, Republic of)

    2014-08-20

    Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C{sub 27}H{sub 27}N{sub 3}O{sub 2} and C{sub 14}H{sub 6}O{sub 8}. • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C{sub 14}H{sub 6}O{sub 8}-treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C{sub 14}H{sub 6}O{sub 8} amphiphilic agent demonstrated a higher thermal conductivity than those treated by C{sub 27}H{sub 27}N{sub 3}O{sub 2}. The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models.

  3. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  4. Effects of heat treatment on properties of boron nitride fiber

    Institute of Scientific and Technical Information of China (English)

    LI Duan; ZHANG ChangRui; LI Bin; CAO Feng; WANG SiQing

    2012-01-01

    The boron nitride fibers were heated at the range of 600-1400°C in flowing nitrogen and air,respectively,and the effects of heat treatment on the structure,composition and morphology of BN fibers were studied.The results showed that BN fibers exhibited smooth surfaces,and that t-BN was the main phase with a little B2O3 included.After heat treatment at 1400°C in nitrogen atmosphere,the fibers displayed rough surfaces with little change in mass.Better crystallinity was obtained with the increasing temperature.During heat treatment in air,the fibers were oxidized severely as the temperature went up,especially at 1400°C.The volatilization of B2O3,HBO2 and H3BO3 led to the pores on the surfaces of the fibers,while the boron oxide glaze and nitrogen gas produced during the oxidation process protected the fibers from further oxidation.

  5. Convert Graphene Sheets to Boron Nitride and Boron Nitride-Carbon Sheets via a Carbon-Substitution-Reaction

    Energy Technology Data Exchange (ETDEWEB)

    Han, W.; Yu, H.-G.; Liu. Z.

    2011-05-16

    Here we discuss our synthesis of highly crystalline pure boron nitride (BN) and BN-carbon (BN-C) sheets by using graphene sheets as templates via a carbon-substitution reaction. Typically, these sheets are several micrometers wide and have a few layers. The composition ratios of BN-C sheets can be controlled by the post-treatment (remove carbon by oxidation) temperature. We also observed pure BN and BN-C nanoribbons. We characterized the BN-C sheets via Raman spectroscopy and density functional theory calculations. The results reveal that BN-C sheets with an armchair C-BN chain, and embedded C{sub 2} or C{sub 6} units in BN-dominated regions energetically are the most favorable.

  6. Preparation and properties of unidirectional boron nitride fibre reinforced boron nitride matrix composites via precursor infiltration and pyrolysis route

    Energy Technology Data Exchange (ETDEWEB)

    Li Duan, E-mail: whataboutduan@gmail.com [State Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); Zhang Changrui; Li Bin; Cao Feng; Wang Siqing; Li Junsheng [State Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China)

    2011-10-25

    Highlights: {yields} BN fibres degrade little when exposed at elevated temperatures. {yields} Precursor infiltration and pyrolysis route is useful to prepare BNf/BN composites. {yields} Few reports have related to the preparation and properties of BNf/BN composites. {yields} BNf/BN composites have desirable high-temperature mechanical properties. {yields} BNf/BN composites have excellent dielectric properties at 2-18 GHz. - Abstract: The unidirectional boron nitride fibre reinforced boron nitride matrix (BN{sub f}/BN) composites were prepared via the precursor infiltration and pyrolysis (PIP) route, and the structure, composition, mechanical and dielectric properties were studied. The composites have a high content and fine crystallinity of BN. The density is 1.60 g cm{sup -3} with a low open porosity of 4.66%. The composites display good mechanical properties with the average flexural strength, elastic modulus and fracture toughness being 53.8 MPa, 20.8 GPa and 6.88 MPa m{sup 1/2}, respectively. Lots of long fibres pull-out from the fracture surface, suggesting a good fibre/matrix interface. As temperature increases, both of the flexural strength and elastic modulus exhibit a decreasing trend, with the lowest values being 36.2 MPa and 8.6 GPa at 1000 deg. C, respectively. The desirable residual ratios of the flexural strength and elastic modulus at 1000 deg. C are 67.3% and 41.3%, respectively. The composites have excellent dielectric properties, with the average dielectric constant and loss tangent being 3.07 and 0.0044 at 2-18 GHz, respectively.

  7. Optical Spectroscopy of Two Dimensional Graphene and Boron Nitride

    Science.gov (United States)

    Ju, Long

    This dissertation describes the use of optical spectroscopy in studying the physical properties of two dimensional nano materials like graphene and hexagonal boron nitride. Compared to bulk materials, atomically thin two dimensional materials have a unique character that is the strong dependence of physical properties on external control. Both electronic band structure and chemical potential can be tuned in situ by electric field-which is a powerful knob in experiment. Therefore the optical study at atomic thickness scale can greatly benefit from modern micro-fabrication technique and electric control of the material properties. As will be shown in this dissertation, such control of both gemometric and physical properties enables new possibilities of optical spectroscopic measurement as well as opto-electronic studies. Other experimental techniques like electric transport and scanning tunneling microscopy and spectroscopy are also combined with optical spectroscopy to reveal the physics that is beyond the reach of each individual technique. There are three major themes in the dissertation. The first one is focused on the study of plasmon excitation of Dirac electrons in monolayer graphene. Unlike plasmons in ordinary two dimensional electron gas, plasmons of 2D electrons as in graphene obey unusual scaling laws. We fabricate graphene micro-ribbon arrays with photolithography technique and use optical absorption spectroscopy to study its absorption spectrum. The experimental result demonstrates the extraordinarily strong light-plasmon coupling and its novel dependence on both charge doping and geometric dimensions. This work provides a first glance at the fundamental properties of graphene plasmons and forms the basis of an emerging subfield of graphene research and applications such as graphene terahertz metamaterials. The second part describes the opto-electronic response of heterostructures composed of graphene and hexagonal boron nitride. We found that there is

  8. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  9. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  10. Controllable Synthesis of Highly Luminescent Boron Nitride Quantum Dots.

    Science.gov (United States)

    Li, Hongling; Tay, Roland Yingjie; Tsang, Siu Hon; Zhen, Xu; Teo, Edwin Hang Tong

    2015-12-22

    Boron nitride quantum dots (BNQDs), as a new member of heavy metal-free quantum dots, have aroused great interest in fundamental research and practical application due to their unique physical/chemical properties. However, it is still a challenge to controllably synthesize high-quality BNQDs with high quantum yield (QY), uniform size and strong fluorescent. In this work, BNQDs have been successfully fabricated by the liquid exfoliation and the subsequent solvothermal process with respect to its facileness and easy large scale up. Importantly, BNQDs with high-quality can be controllably obtained by adjusting the synthetic parameters involved in the solvothermal process including filling factor, synthesis temperature, and duration time. Encouragingly, the as-prepared BNQDs possess strong blue luminescence with QY as high as 19.5%, which can be attributed to the synergetic effect of size, surface chemistry and edge defects. In addition, this strategy presented here provides a new reference for the controllable synthesis of other heavy metal-free QDs. Furthermore, the as-prepared BNQDs are non-toxic to cells and exhibit nanosecond-scaled lifetimes, suggesting they have great potential biological and optoelectronic applications.

  11. Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride.

    Science.gov (United States)

    Exarhos, Annemarie L; Hopper, David A; Grote, Richard R; Alkauskas, Audrius; Bassett, Lee C

    2017-03-28

    Hexagonal boron nitride (h-BN) is rapidly emerging as an attractive material for solid-state quantum engineering. Analogously to three-dimensional wide-band-gap semiconductors such as diamond, h-BN hosts isolated defects exhibiting visible fluorescence at room temperature, and the ability to position such quantum emitters within a two-dimensional material promises breakthrough advances in quantum sensing, photonics, and other quantum technologies. Critical to such applications is an understanding of the physics underlying h-BN's quantum emission. We report the creation and characterization of visible single-photon sources in suspended, single-crystal, h-BN films. With substrate interactions eliminated, we study the spectral, temporal, and spatial characteristics of the defects' optical emission. Theoretical analysis of the defects' spectra reveals similarities in vibronic coupling to h-BN phonon modes despite widely varying fluorescence wavelengths, and a statistical analysis of the polarized emission from many emitters throughout the same single-crystal flake uncovers a weak correlation between the optical dipole orientations of some defects and h-BN's primitive crystallographic axes, despite a clear misalignment for other dipoles. These measurements constrain possible defect models and, moreover, suggest that several classes of emitters can exist simultaneously throughout free-standing h-BN, whether they be different defects, different charge states of the same defect, or the result of strong local perturbations.

  12. Exfoliation of Hexagonal Boron Nitride via Ferric Chloride Intercalation

    Science.gov (United States)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Rogers, Richard B.

    2014-01-01

    Sodium fluoride (NaF) was used as an activation agent to successfully intercalate ferric chloride (FeCl3) into hexagonal boron nitride (hBN). This reaction caused the hBN mass to increase by approx.100 percent, the lattice parameter c to decrease from 6.6585 to between 6.6565 and 6.6569 ?, the x-ray diffraction (XRD) (002) peak to widen from 0.01deg to 0.05deg of the full width half maximum value, the Fourier transform infrared (FTIR) spectrum's broad band (1277/cm peak) to change shape, and new FTIR bands to emerge at 3700 to 2700 and 1600/cm. This indicates hBN's structural and chemical properties are significantly changed. The intercalated product was hygroscopic and interacted with moisture in the air to cause further structural and chemical changes (from XRD and FTIR). During a 24-h hold at room temperature in air with 100 percent relative humidity, the mass increased another 141 percent. The intercalated product, hydrated or not, can be heated to 750 C in air to cause exfoliation. Exfoliation becomes significant after two intercalation-air heating cycles, when 20-nm nanosheets are commonly found. Structural and chemical changes indicated by XRD and FTIR data were nearly reversed after the product was placed in hydrochloric acid (HCl), resulting in purified, exfoliated, thin hBN products.

  13. Hyperbolic phonon polaritons in hexagonal boron nitride (Conference Presentation)

    Science.gov (United States)

    Dai, Siyuan; Ma, Qiong; Fei, Zhe; Liu, Mengkun; Goldflam, Michael D.; Andersen, Trond; Garnett, William; Regan, Will; Wagner, Martin; McLeod, Alexander S.; Rodin, Alexandr; Zhu, Shou-En; Watanabe, Kenji; Taniguchi, T.; Dominguez, Gerado; Thiemens, Mark; Castro Neto, Antonio H.; Janssen, Guido C. A. M.; Zettl, Alex; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael M.; Basov, Dmitri N.

    2016-09-01

    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [1]. Additionally, we carried out the modification of hyperbolic response in meta-structures comprised of a mononlayer graphene deposited on hBN [2]. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the "hyperlens" for subdiffractional focusing and imaging using a slab of hBN [3]. References [1] S. Dai et al., Science, 343, 1125 (2014). [2] S. Dai et al., Nature Nanotechnology, 10, 682 (2015). [3] S. Dai et al., Nature Communications, 6, 6963 (2015).

  14. Thermal transport across graphene and single layer hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingchao, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [Holland Computing Center, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Hong, Yang [Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Yue, Yanan, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072 (China)

    2015-04-07

    As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

  15. Origin of rectification in boron nitride heterojunctions to silicon.

    Science.gov (United States)

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

  16. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  17. Field emission from open ended aluminum nitride nanotubes

    Science.gov (United States)

    Tondare, V. N.; Balasubramanian, C.; Shende, S. V.; Joag, D. S.; Godbole, V. P.; Bhoraskar, S. V.; Bhadbhade, M.

    2002-06-01

    This letter reports the field emission measurements from the nanotubes of aluminum nitride which were synthesized by gas phase condensation using the solid-vapor equilibria. A dc arc plasma reactor was used for producing the vapors of aluminum in a reactive nitrogen atmosphere. Nanoparticles and nanotubes of aluminum nitride were first characterized by transmission electron microscope and tube dimensions were found to be varying from 30 to 200 nm in diameter and 500 to 700 nm in length. These tubes were mixed with nanoparticles of size range between 5 and 200 nm in diameter. Tungsten tips coated with these nanoparticles and tubes were used as a field emitter. The field emission patterns display very interesting features consisting of sharp rings which were often found to change their shapes. The patterns are attributed to the open ended nanotubes of aluminum nitride. A few dot patterns corresponding to the nanoparticles were also seen to occur. The Fowler-Nordheim plots were seen to be nonlinear in nature, which reflects the semi-insulating behavior of the emitter. The field enhancement factor is estimated to be 34 500 indicating that the field enhancement due to the nanometric size of the emitter is an important cause for the observed emission.

  18. Charge-controlled switchable CO2 capture on boron nitride nanomaterials.

    Science.gov (United States)

    Sun, Qiao; Li, Zhen; Searles, Debra J; Chen, Ying; Lu, Gaoqing Max; Du, Aijun

    2013-06-05

    Increasing concerns about the atmospheric CO2 concentration and its impact on the environment are motivating researchers to discover new materials and technologies for efficient CO2 capture and conversion. Here, we report a study of the adsorption of CO2, CH4, and H2 on boron nitride (BN) nanosheets and nanotubes (NTs) with different charge states. The results show that the process of CO2 capture/release can be simply controlled by switching on/off the charges carried by BN nanomaterials. CO2 molecules form weak interactions with uncharged BN nanomaterials and are weakly adsorbed. When extra electrons are introduced to these nanomaterials (i.e., when they are negatively charged), CO2 molecules become tightly bound and strongly adsorbed. Once the electrons are removed, CO2 molecules spontaneously desorb from BN absorbents. In addition, these negatively charged BN nanosorbents show high selectivity for separating CO2 from its mixtures with CH4 and/or H2. Our study demonstrates that BN nanomaterials are excellent absorbents for controllable, highly selective, and reversible capture and release of CO2. In addition, the charge density applied in this study is of the order of 10(13) cm(-2) of BN nanomaterials and can be easily realized experimentally.

  19. Chemisorption of Hydroxide on 2D Materials from DFT Calculations: Graphene versus Hexagonal Boron Nitride.

    Science.gov (United States)

    Grosjean, Benoit; Pean, Clarisse; Siria, Alessandro; Bocquet, Lydéric; Vuilleumier, Rodolphe; Bocquet, Marie-Laure

    2016-11-17

    Recent nanofluidic experiments revealed strongly different surface charge measurements for boron-nitride (BN) and graphitic nanotubes when in contact with saline and alkaline water (Nature 2013, 494, 455-458; Phys. Rev. Lett. 2016, 116, 154501). These observations contrast with the similar reactivity of a graphene layer and its BN counterpart, using density functional theory (DFT) framework, for intact and dissociative adsorption of gaseous water molecules. Here we investigate, by DFT in implicit water, single and multiple adsorption of anionic hydroxide on single layers. A differential adsorption strength is found in vacuum for the first ionic adsorption on the two materials-chemisorbed on BN while physisorbed on graphene. The effect of implicit solvation reduces all adsorption values, resulting in a favorable (nonfavorable) adsorption on BN (graphene). We also calculate a pKa ≃ 6 for BN in water, in good agreement with experiments. Comparatively, the unfavorable results for graphene in water echo the weaker surface charge measurements but point to an alternative scenario.

  20. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.

    2013-11-12

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

  1. Grain refining of aluminium alloys and silicon by means of boron-nitride particles

    Energy Technology Data Exchange (ETDEWEB)

    Wulf, Eric; Seitz, Jan-Marten; Schaper, Mirko; Bach, Friedrich-Wilhelm [Leibniz Univ. of Hannover, Garbsen (Germany). Inst. of Materials Science; Alphei, Lukas David; Westphal, David; Becker, Joerg August; Feldhoff, Armin [Leibniz Univ. of Hannover, Garbsen (Germany). Inst. of Physical Chemistry and Electrochemistry

    2013-03-15

    Investigations were carried out to grain refine the aluminium alloys Al-6Si (all compositions given in wt.%) and Al-12Si as well as pure silicon by means of inoculation using boron nitride nano-particles. Comparative tests were performed using both conventional grain refiners based on titanium as well as without inoculants. Analyses were performed using scanning electron microscopy, tensile testing, thermographic and metallographic techniques. In doing this, a significant effect on grain refining is verified by inoculating using boron nitride which exceeds the effect of conventional grain refiners. (orig.)

  2. Non-linear excitation of quantum emitters in two-dimensional hexagonal boron nitride

    CERN Document Server

    Schell, Andreas W; Takashima, Hideaki; Takeuchi, Shigeki; Aharonovich, Igor

    2016-01-01

    Two-photon absorption is an important non-linear process employed for high resolution bio-imaging and non-linear optics. In this work we realize two-photon excitation of a quantum emitter embedded in a two-dimensional material. We examine defects in hexagonal boron nitride and show that the emitters exhibit similar spectral and quantum properties under one-photon and two-photon excitation. Furthermore, our findings are important to deploy two-dimensional hexagonal boron nitride for quantum non-linear photonic applications.

  3. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  4. Nanostructured Boron Nitride: From Molecular Design to Hydrogen Storage Application

    Directory of Open Access Journals (Sweden)

    Georges Moussa

    2014-07-01

    Full Text Available The spray-pyrolysis of borazine at 1400 °C under nitrogen generates boron nitride (BN nanoparticles (NPs. The as-prepared samples form elementary blocks containing slightly agglomerated NPs with sizes ranging from 55 to 120 nm, a Brunauer-Emmett-Teller (BET-specific surface area of 34.6 m2 g−1 and a helium density of 1.95 g cm−3. They are relatively stable in air below 850 °C in which only oxidation of the NP surface proceeds, whereas under nitrogen, their lower size affects their high temperature thermal behavior in the temperature range of 1450–2000 °C. Nitrogen heat-treated nanostructures have been carefully analyzed using X-ray diffraction, electron microscopy and energy-dispersive X-ray spectroscopy. The high temperature treatment (2000 °C gives hollow-cored BN-NPs that are strongly facetted, and after ball-milling, hollow core-mesoporous shell NPs displaying a BET-specific surface area of 200.5 m2·g−1 and a total pore volume of 0.287 cm3·g−1 were produced. They have been used as host material to confine, then destabilize ammonia borane (AB, thus improving its dehydrogenation properties. The as-formed AB@BN nanocomposites liberated H2 at 40 °C, and H2 is pure in the temperature range 40–80 °C, leading to a safe and practical hydrogen storage composite material.

  5. Thermal neutron detectors based on hexagonal boron nitride epilayers

    Science.gov (United States)

    Doan, T. C.; Marty, A.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-09-01

    Solid-state neutron detectors with high performances are urgently sought after for the detection of fissile materials. Until now, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We have successfully synthesized hexagonal boron nitride (h-BN) epilayers with varying thicknesses (0.3 μm - 50 μm) by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. In this paper, we present the detailed characterization of thermal neutron detectors fabricated from h-BN epilayers with a thickness up to 5 m to obtain insights into the h-BN epilayer thickness dependence of the device performance. The results revealed that the charge collection efficiency is almost independent of the h-BN epilayer thickness. By minimizing h-BN material removal by dry etching, it was shown that detectors incorporating an isotopically 10B-enriched h-BN epilayer of 2.7 μm in thickness exhibited an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. By doing away altogether with dry etching, we have successfully realized a simple vertical 43 μm thick h-10BN detector which delivers a detection efficiency of 51.4% for thermal neutrons, which is the highest reported efficiency for any semiconductor-based neutron detector The h-BN detectors possess all the advantages of semiconductor devices including low cost, high efficiency and sensitivity, wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

  6. Electron affinity of cubic boron nitride terminated with vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yu; Sun, Tianyin; Shammas, Joseph; Hao, Mei; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Kaur, Manpuneet [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States)

    2015-10-28

    A thermally stable negative electron affinity (NEA) for a cubic boron nitride (c-BN) surface with vanadium-oxide-termination is achieved, and its electronic structure was analyzed with in-situ photoelectron spectroscopy. The c-BN films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition employing BF{sub 3} and N{sub 2} as precursors. Vanadium layers of ∼0.1 and 0.5 nm thickness were deposited on the c-BN surface in an electron beam deposition system. Oxidation of the metal layer was achieved by an oxygen plasma treatment. After 650 °C thermal annealing, the vanadium oxide on the c-BN surface was determined to be VO{sub 2}, and the surfaces were found to be thermally stable, exhibiting an NEA. In comparison, the oxygen-terminated c-BN surface, where B{sub 2}O{sub 3} was detected, showed a positive electron affinity of ∼1.2 eV. The B{sub 2}O{sub 3} evidently acts as a negatively charged layer introducing a surface dipole directed into the c-BN. Through the interaction of VO{sub 2} with the B{sub 2}O{sub 3} layer, a B-O-V layer structure would contribute a dipole between the O and V layers with the positive side facing vacuum. The lower enthalpy of formation for B{sub 2}O{sub 3} is favorable for the formation of the B-O-V layer structure, which provides a thermally stable surface dipole and an NEA surface.

  7. Pentagonal monolayer crystals of carbon, boron nitride, and silver azide

    Energy Technology Data Exchange (ETDEWEB)

    Yagmurcukardes, M., E-mail: mehmetyagmurcukardes@iyte.edu.tr; Senger, R. T., E-mail: tugrulsenger@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, 35430 Urla, Izmir (Turkey); Sahin, H.; Kang, J.; Torun, E.; Peeters, F. M. [Department of Physics, University of Antwerp, Campus Groenenborgerlaan, 2020, Antwerp (Belgium)

    2015-09-14

    In this study, we present a theoretical investigation of structural, electronic, and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2}), and silver azide (p-AgN{sub 3}) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN{sub 3} are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2} have negative Poisson's ratio values. On the other hand, the p-AgN{sub 3} has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B{sub 2}N{sub 4} are stable, but p-AgN{sub 3} and p-B{sub 4}N{sub 2} are vulnerable against vibrational excitations.

  8. Triggering the atomic layers control of hexagonal boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yangxi [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Zhang, Changrui, E-mail: crzhang12@gmail.com [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Li, Bin [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Jiang, Da; Ding, Guqiao; Wang, Haomin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Xie, Xiaoming, E-mail: xmxie@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-09-15

    Highlights: • Thickness of h-BN films can be controlled from double atomic layers to over ten atomic layers by adjusting the CVD parameters, quite different from the reported thickness control of up to tens of nanometers. (The interlayer distance of h-BN is 0.333 nm.) • Growth mechanisms of h-BN are discussed, especially for bilayer h-BN films. • Both epitaxial growth and diffusion-segregation process are involved in the synthesis of bilayer h-BN films. - Abstract: In this work, we report the successful synthesis of large scale hexagonal boron nitride films with controllable atomic layers. The films are grown on thin nickel foils via ambient pressure chemical vapor deposition with borazine as the precursor. The atomic layers of h-BN films can be controlled in a narrow range by adjusting growth time and the cooling rates. Transmission electron microscope results shows the h-BN films exhibit high uniformity and good crystalline. X-ray photoelectron spectroscopy shows the B/N elemental ratio is about 1.01. The h-BN films exhibit a pronounced deep ultraviolet absorption at 203.0 nm with a large optical band gap of 6.02 ± 0.03 eV. The results suggest potential applications of h-BN films in deep ultraviolet and dielectric materials. Growth mechanisms of h-BN films with thickness control are discussed, especially when the synthesized h-BN films after a higher cooling rate show an in-plane rotation angle between bilayers. Both epitaxial growth and diffusion-segregation process are involved in the synthesis of bilayer h-BN films.

  9. Structural Modification in Carbon Nanotubes by Boron Incorporation

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2009-01-01

    Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

  10. Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage

    Science.gov (United States)

    Jin, Guojun; Zhai, Xuechao

    2013-03-01

    We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interactions. Our analytical results show that there are striking cooperation effects arising from the spin-orbit interactions and the interlayer bias voltage. For realizing topological phase transition, in contrast to a gated graphene bilayer for increasing its energy gap, the energy gap of a boron-nitride bilayer is significantly reduced by an applied gate voltage. For the AA stacking-bilayer which has the inversion symmetry, a strong topological phase is found, and there is an interesting reentrant behavior from a normal phase to a topological phase and then to a normal phase again, characterized by the topological index. Therefore, the gate voltage modulated AA-boron nitride bilayer can be taken as a newcomer of the topological insulator family. For the AB stacking-bilayer which is lack of the inversion symmetry, it is always topologically trivial, but exhibits an unusual quantum Hall phase with four degenerate low-energy states localized at a single edge. It is suggested that these theoretical findings could be verified experimentally in the transport properties of boron-nitride bylayers. This research was supported by the NSFC (Nos. 60876065, 11074108), PAPD, and NBRPC (Nos. 2009CB929504, 2011CB922102).

  11. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens

    2014-01-01

    Using a combination of complementary in situ X-ray photoelectron spectroscopy and X-ray diffraction, we study the fundamental mechanisms underlying the chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) on polycrystalline Cu. The nucleation and growth of h-BN layers is found to occ...

  12. Synthesis and radiation response of BCON: a graphene oxide and hexagonal boron nitride hybrid

    Science.gov (United States)

    Bhimanapati, Ganesh R.; Wetherington, Maxwell; Mahabir, Shawn; Robinson, Joshua A.

    2016-06-01

    Since graphene, there has been a focus on several two-dimensional material systems (e.g. boron nitride, borocarbon nitride (BCN), transition-metal dichalcogenides) that provide an even wider array of unique chemistries and properties to explore future applications. Specifically, tailoring graphene/boron nitride heterostructures—which can theoretically retain the character of a single-atom thick sheet, withstand large physical strains, are easily functionalized, and have entirely different optical and mechanical properties compared to graphene—can provide the foundation for entirely new research avenues. In recent years, it has been shown that because of the similar crystal structure, carbon, boron, and nitrogen can co-exist as atomic sheets in a layered structure. We have developed a facile method of integrating boron nitride (hBN) and graphene oxide (GO) via chemical exfoliation which we refer to as BCON. The study of the stability of this material at different pH conditions indicates a stable and a uniform solution is achievable at pH 4-8. X-Ray Photoelectron Spectroscopy helped to identify the new bonds which indicated the formation of BCON linkage. Further, an in situ XPS technique was used to understand the chemical changes while exposing it to ionization radiation specially focusing on the C/O ratio. It was observed that even with a very low energy source, this material is highly sensitive to ionizing radiation, such as neutron, alpha and beta particles.

  13. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    NARCIS (Netherlands)

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early developmen

  14. Interband transitions, plasmons, and dispersion in hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Tarrio, C.; Schnatterly, S.E. (Jesse W. Beams Laboratory of Physics, University of Virginia, Charlottesville, Virginia 22901 (US))

    1989-10-15

    We have measured inelastic-electron-scattering spectra of several hexagonal-boron-nitride samples with momentum transfer both in and out of the {ital a}-{ital b} plane and obtained the dielectric and optical constants from 0 to 60 eV. The low-{ital q} energy-loss spectrum with momentum in the plane is dominated by the {pi}-electron plasmon at 8.5 eV and the total ({sigma}+{pi}) plasmon at 26.4 eV. The {pi} plasmon arises from two strong interband transitions at 6.1 and 6.95 eV, and a continuum threshold at 7.6 eV. The plasmons are well described as collective oscillations of bound electrons. We have inferred a band gap of 5.9 eV by observing the intrinsic absorption threshold in a series of samples of varying purity. The dispersion in the plasmons and the second interband transition is quadratic for 0{lt}{ital q}{lt}1.0 A{sup {minus}1}, while the first interband transition disperses upward in energy up to 0.6 A{sup {minus}1}, above which its energy remains almost constant. The dispersion of the {pi} plasmon is equal to that of the second interband transition, and its width remains constant up to a critical momentum, indicating that its width is dominated by decay into single-particle transitions. The energy-loss function with {ital q} along {ital c} shows three collective oscillations at 7.7, 11.7, and 23 eV. The interband spectrum is similar to that with {ital q} in the plane, except that an additional transition appears at 9.9 eV and the oscillator strength is shifted to higher energies. The similarity in the spectra for {ital q} in and out of the plane indicates nearly degenerate occupied {sigma} and {pi} states near {ital E}{sub {ital F}}, which is inconsistent with existing band-structure calculations.

  15. Evaluation of Synthesis & Processing Routes for the High K- Boron Nitride Nano Tubes (BNNTS) for Thermal Management Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The purpose of this proposal is to develop and demonstrate the feasibility of processing the High Thermal Conductivity Boron Nitride Nano Tubes (High-K BNNTs) that...

  16. The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

    2015-08-01

    An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.

  17. Phonon symmetries in hexagonal boron nitride probed by incoherent light emission

    Science.gov (United States)

    Vuong, T. Q. P.; Cassabois, G.; Valvin, P.; Jacques, V.; Van Der Lee, A.; Zobelli, A.; Watanabe, K.; Taniguchi, T.; Gil, B.

    2017-03-01

    Layered compounds are stacks of weakly bound two-dimensional atomic crystals, with a prototypal hexagonal structure in graphene, transition metal dichalcogenides and boron nitride. This crystalline anisotropy results in vibrational modes with specific symmetries depending on the in-plane or out-of-plane atomic displacements. We show that polarization-resolved photoluminescence measurements in hexagonal boron nitride reflect the phonon symmetries in this layered semiconductor. Experiments performed with a detection on the sample edge, perpendicular to the c-axis, reveal the strong polarization-dependence of the emission lines corresponding to the recombination assisted by the three acoustic phonon modes. We elucidate the dipole orientation of the fundamental indirect exciton. We demonstrate evidence of the so-far missing phonon replica due to the optical out-of-plane phonon mode.

  18. Biophysical response of living cells to boron nitride nanoparticles: uptake mechanism and bio-mechanical characterization

    Energy Technology Data Exchange (ETDEWEB)

    Rasel, Md. Alim Iftekhar; Li, Tong; Nguyen, Trung Dung; Singh, Sanjleena [Queensland University of Technology (QUT), School of Chemistry, Physics and Mechanical Engineering (Australia); Zhou, Yinghong; Xiao, Yin [Queensland University of Technology (QUT), Institute of Health and Biomedical Innovation (Australia); Gu, YuanTong, E-mail: yuantong.gu@qut.edu.au [Queensland University of Technology (QUT), School of Chemistry, Physics and Mechanical Engineering (Australia)

    2015-11-15

    Boron nitride nanomaterials have attracted significant interest due to their superior chemical and physical properties. Despite these novel properties, investigation on the interaction between boron nitride nanoparticle (BN NP) and living systems has been limited. In this study, BN NP (100–250 nm) is assessed as a promising biomaterial for medical applications. The toxicity of BN NP is evaluated by assessing the cells behaviours both biologically (MTT assay, ROS detection etc.) and physically (atomic force microscopy). The uptake mechanism of BN NP is studied by analysing the alternations in cellular morphology based on cell imaging techniques. The results demonstrate in vitro cytocompatibility of BN NP with immense potential for use as an effective nanoparticle for various bio-medical applications.

  19. Marine corrosion protective coatings of hexagonal boron nitride thin films on stainless steel.

    Science.gov (United States)

    Husain, Esam; Narayanan, Tharangattu N; Taha-Tijerina, Jose Jaime; Vinod, Soumya; Vajtai, Robert; Ajayan, Pulickel M

    2013-05-22

    Recently, two-dimensional, layered materials such as graphene and hexagonal boron nitride (h-BN) have been identified as interesting materials for a range of applications. Here, we demonstrate the corrosion prevention applications of h-BN in marine coatings. The performance of h-BN/polymer hybrid coatings, applied on stainless steel, were evaluated using electrochemical techniques in simulated seawater media [marine media]. h-BN/polymer coating shows an efficient corrosion protection with a low corrosion current density of 5.14 × 10(-8) A/cm(2) and corrosion rate of 1.19 × 10(-3) mm/year and it is attributed to the hydrofobic, inert and dielectric nature of boron nitride. The results indicated that the stainless steel with coatings exhibited improved corrosion resistance. Electrochemical impedance spectroscopy and potentiodynamic analysis were used to propose a mechanism for the increased corrosion resistance of h-BN coatings.

  20. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Dauber, Jan; Stampfer, Christoph [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany); Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen (Germany); Oellers, Martin [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-05-11

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.

  1. Biophysical response of living cells to boron nitride nanoparticles: uptake mechanism and bio-mechanical characterization

    Science.gov (United States)

    Rasel, Md. Alim Iftekhar; Li, Tong; Nguyen, Trung Dung; Singh, Sanjleena; Zhou, Yinghong; Xiao, Yin; Gu, YuanTong

    2015-11-01

    Boron nitride nanomaterials have attracted significant interest due to their superior chemical and physical properties. Despite these novel properties, investigation on the interaction between boron nitride nanoparticle (BN NP) and living systems has been limited. In this study, BN NP (100-250 nm) is assessed as a promising biomaterial for medical applications. The toxicity of BN NP is evaluated by assessing the cells behaviours both biologically (MTT assay, ROS detection etc.) and physically (atomic force microscopy). The uptake mechanism of BN NP is studied by analysing the alternations in cellular morphology based on cell imaging techniques. The results demonstrate in vitro cytocompatibility of BN NP with immense potential for use as an effective nanoparticle for various bio-medical applications.

  2. Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure

    Directory of Open Access Journals (Sweden)

    Jia-Tao Sun

    2012-09-01

    graphene and hexagonal boron nitride (C-BN nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN is a wide gap semiconductor. Here we studied the electronic structures and carrier transport of hybrid C-BN nanostructures by using first principles calculations and deformation potential theory. We have found that the physical quantities in these systems under study, band gap, effective mass, deformation potential, and carrier mobility, can be categorised into three different families depending on the width of graphene nanoribbon. This family behavior is similar to pristine armchair graphene nanoribbon, but with slight difference from the individual component. New opportunities of designing nanoelectric devices are discussed by utilizing the quantum confinement effect based on such kind of hybrid nanostructures.

  3. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Y.; Grush, M.; Callcott, T.A. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  4. Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures

    Science.gov (United States)

    Abergel, D. S. L.

    2017-02-01

    Previously, graphene nanoribbons set in lateral heterostructures with hexagonal boron nitride were predicted to support topologically protected states at low energy. We investigate how robust the transport properties of these states are against lattice disorder. We find that forms of disorder that do not couple the two valleys of the zigzag graphene nanoribbon do not impact the transport properties at low bias, indicating that these lateral heterostructures are very promising candidates for chip-scale conducting interconnects. Forms of disorder that do couple the two valleys, such as vacancies in the graphene ribbon, or substantial inclusions of armchair edges at the graphene-hexagonal boron nitride interface will negatively affect the transport. However, these forms of disorder are not commonly seen in current experiments.

  5. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  6. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  7. Enrichment and desalting of tryptic protein digests and the protein depletion using boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Fischnaller, Martin; Köck, Rainer; Bakry, Rania, E-mail: rania.bakry@uibk.ac.at; Bonn, Günther K.

    2014-05-01

    Highlights: • Protein tryptic digests were desalted and enriched utilizing hexagonal boron nitride. • Phosphopeptides were desalted with high recovery rates. • Boron nitride exhibits high wettability allowing fast sample preparation. • Boron nitride shows protein depletion capability applied for peptide purification. - Abstract: Sample preparation still remains a great challenge in modern bioanalysis and the interest in new efficient solid phase extraction (SPE) materials still remains high. In this work, hexagonal boron nitride (h-BN) is introduced as a new SPE material for the isolation and enrichment of peptides. The h-BN is isoelectronic and structurally similar to graphite. It has remarkable properties including good thermal conductivity, excellent thermal and chemical stability and a better oxidation resistance than graphite. BN attracts increasing interest because of its wide range of applicability. In the present work, the great potential of h-BN, as a new SPE-material, on the enrichment, preconcentration and desalting of tryptic digest of model proteins is demonstrated. A special attention was dedicated to the efficient enrichment of hydrophilic phosphopeptides. Two elution protocols were developed for the enrichment of peptides compatible for subsequent MALDI-MS and ESI-MS analysis. In addition, the recoveries of 5 peptides and 3 phosphopeptides with wide range of pI values utilizing h-BN materials with different surface areas were investigated. 84–106% recovery rate could be achieved using h-BN materials. The results were compared with those obtained using graphite and silica C18 under the same elution conditions, and lower recoveries were obtained. In addition, h-BN was found to have a capability of protein depletion, which is requisite for the peptide profiling.

  8. Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

    2015-06-15

    Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Hexagonal Boron Nitride Nanosheets as High-Performance Binder-Free Fire-Resistant Wood Coatings.

    Science.gov (United States)

    Liu, Juanjuan; Kutty, Rajendrannair Govindan; Zheng, Qingshen; Eswariah, Varrla; Sreejith, Sivaramapanicker; Liu, Zheng

    2017-01-01

    Hexagonal boron nitride (h-BN) nanosheets are synthesized through a facile shear force liquid phase exfoliation method and their use as a binder-free oxidation and fire-resistant wood coating is demonstrated. Characterized by intrinsic low thermal diffusivity and thermal effusivity, h-BN nanosheet coatings show an excellent fire resistance and oxidation resistance up to 900 °C in air.

  10. Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets

    Directory of Open Access Journals (Sweden)

    Shena M. Stanley

    2015-01-01

    Full Text Available A novel catalyst-free methodology has been developed to prepare few-layer hexagonal boron nitride nanosheets using a bottom-up process. Scanning electron microscopy and transmission electron microscopy (both high and low resolution exhibit evidence of less than ten layers of nanosheets with uniform dimension. X-ray diffraction pattern and other additional characterization techniques prove crystallinity and purity of the product.

  11. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde.

    Science.gov (United States)

    Han, Hongling; Ding, Guodong; Wu, Tianbin; Yang, Dexin; Jiang, Tao; Han, Buxing

    2015-07-13

    A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB) was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP) as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  12. Sub-diffractional volume-confined polaritons in the natural hyperbolic material hexagonal boron nitride.

    Science.gov (United States)

    Caldwell, Joshua D; Kretinin, Andrey V; Chen, Yiguo; Giannini, Vincenzo; Fogler, Michael M; Francescato, Yan; Ellis, Chase T; Tischler, Joseph G; Woods, Colin R; Giles, Alexander J; Hong, Minghui; Watanabe, Kenji; Taniguchi, Takashi; Maier, Stefan A; Novoselov, Kostya S

    2014-10-17

    Strongly anisotropic media, where the principal components of the dielectric tensor have opposite signs, are called hyperbolic. Such materials exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional length scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material hexagonal boron nitride is an attractive alternative. Here we report on three-dimensionally confined 'hyperbolic polaritons' in boron nitride nanocones that support four series (up to the seventh order) modes in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit high-quality factors (Q up to 283) in the strong confinement regime (up to λ/86). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering.

  13. Molecular dynamics modeling of defect formation in many-layer hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Stephani, Kelly A., E-mail: ksteph@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Boyd, Iain D. [Department of Aerospace Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2015-12-15

    Molecular dynamics simulations are conducted to examine lattice defect formation in a hexagonal boron nitride lattice by high-energy xenon ion impact. This work seeks to characterize the production of defects which occur under ion irradiation. Lattice defect formation is first examined in single-layer hexagonal boron nitride. Energetic xenon ions over a range of 10 eV–10 keV are used to randomly impact the central lattice at an angle of 90° (orthogonal to the lattice basal plane). The resulting defects are analyzed for 5000 ion impacts, and results are reported for average single and double vacancy formation per impact. A similar study is conducted for a many-layer hexagonal boron nitride lattice, to assess the influence of additional layers in the formation of point defects as a function of incident ion energy. Ion impacts at both 90° and 45° are examined. The defects formed in the top layer of the many-layer lattice are qualitatively similar to the single layer results, but the presence of the bulk lattice is found to reduce the single vacancy probability in the top-most layer. Point defects are prominent in the lattice sub-layers with increasing ion energy. Orthogonal ion impacts are found to cause the most damage, as measured by the number of vacancy defects produced; the number of vacancies increases linearly with energy, while the number of defects in the oblique impact configuration reaches an asymptotic limit with increasing energy.

  14. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  15. Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

    Science.gov (United States)

    Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

    2017-02-01

    Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe3O4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe3O4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe3O4 NPs, leading to a dramatic increase in TB. These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

  16. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Science.gov (United States)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  17. Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

    Science.gov (United States)

    WangEqual Contribution To This Work., Jian; Wang, Zhiqiang; Cho, Hyunjin; Kim, Myung Jong; Sham, T. K.; Sun, Xuhui

    2015-01-01

    Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which shows more significant detectable contaminants and defects such as tri-coordinated boron/nitrogen oxide. The nitrogen site has shown very weak or no excitonic character. The distinct excitonic effect on boron and nitrogen was interpreted to the partly ionic state of hBN. Bulk XANES of hBN nanosheets was also measured to confirm the spectro-microscopic STXM result. Finally, the unoccupied electronic structures of hBN and graphene were compared.Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which

  18. Laser-initiated primary and secondary nuclear reactions in Boron-Nitride

    Science.gov (United States)

    Labaune, C.; Baccou, C.; Yahia, V.; Neuville, C.; Rafelski, J.

    2016-02-01

    Nuclear reactions initiated by laser-accelerated particle beams are a promising new approach to many applications, from medical radioisotopes to aneutronic energy production. We present results demonstrating the occurrence of secondary nuclear reactions, initiated by the primary nuclear reaction products, using multicomponent targets composed of either natural boron (B) or natural boron nitride (BN). The primary proton-boron reaction (p + 11B → 3 α + 8.7 MeV), is one of the most attractive aneutronic fusion reaction. We report radioactive decay signatures in targets irradiated at the Elfie laser facility by laser-accelerated particle beams which we interpret as due to secondary reactions induced by alpha (α) particles produced in the primary reactions. Use of a second nanosecond laser beam, adequately synchronized with the short laser pulse to produce a plasma target, further enhanced the reaction rates. High rates and chains of reactions are essential for most applications.

  19. Transport properties of boron nanotubes investigated by ab initio calculation

    Institute of Scientific and Technical Information of China (English)

    Guo Wei; Hu Yi-Bin; Zhang Yu-Yang; Du Shi-Xuan; Gao Hong-Jun

    2009-01-01

    We investigate atomic and electronic structures of boron nanotubes (BNTs) by using the density functional theory(DFT). The transport properties of BNTs with different diameters and chiralities are studied by the Keldysh nonequi-librium Green function (NEGF) method. It is found that the cohesive energies and conductances of BNTs decrease as their diameters decrease. It is more difficult to form (N, 0) tubes than (M, M) tubes when the diameters of the two kinds of tubes are comparable. However, the (N, 0) tubes have a higher conductance than the (M, M) tubes. When the BNTs are connected to gold electrodes, the coupling between the BNTs and the electrodes will affect the transport properties of tubes significantly.

  20. Density functional study of manganese atom adsorption on hydrogen-terminated armchair boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Abdullahi, Yusuf Zuntu [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Kaduna State University, P.M.B. 2339, Kaduna State (Nigeria); Rahman, Md. Mahmudur, E-mail: mahmudur@upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Shuaibu, Alhassan [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Nigerian Defence Academy, P.M.B 2109 Kaduna (Nigeria); Abubakar, Shamsu [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Yobe State University, P.M.B. 1144, Yobe State (Nigeria); Zainuddin, Hishamuddin [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Institute for Mathematical Research, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Muhida, Rifki [Department of Physics-Energy Engineering, Surya University, Gedung 01 Scientia Business Park, Jl. Boulevard Gading Serpong Blok O/1, Summarecon Serpong, Tangerang 15810, Banten (Indonesia); Setiyanto, Henry [Analytical Chemistry Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10, Bandung 40132 (Indonesia)

    2014-08-15

    In this paper, we have investigated stable structural, electric and magnetic properties of manganese (Mn) atom adsorption on armchair hydrogen edge-terminated boron nitride nanoribbon (A-BNNRs) using first principles method based on density-functional theory with the generalized gradient approximation. Calculation shows that Mn atom situated on the ribbons of A-BNNRs is the most stable configuration, where the bonding is more pronounced. The projected density of states (PDOS) of the favored configuration has also been computed. It has been found that the covalent bonding of boron (B), nitrogen (N) and Mn is mainly contributed by s, d like-orbitals of Mn and partially occupied by the 2p like-orbital of N. The difference in energy between the inner and the edge adsorption sites of A-BNNRs shows that Mn atoms prefer to concentrate at the edge sites. The electronic structures of the various configurations are wide, narrow-gap semiconducting and half-metallic, and the magnetic moment of Mn atoms are well preserved in all considered configurations. This has shown that the boron nitride (BN) sheet covered with Mn atoms demonstrates additional information on its usefulness in future spintronics, molecular magnet and nanoelectronics devices.

  1. Defect charge states in Si doped hexagonal boron-nitride monolayer.

    Science.gov (United States)

    Mapasha, R E; Molepo, M P; Andrew, R C; Chetty, N

    2016-02-10

    We perform ab initio density functional theory calculations to investigate the energetics, electronic and magnetic properties of isolated stoichiometric and non-stoichiometric substitutional Si complexes in a hexagonal boron-nitride monolayer. The Si impurity atoms substituting the boron atom sites SiB giving non-stoichiometric complexes are found to be the most energetically favourable, and are half-metallic and order ferromagnetically in the neutral charge state. We find that the magnetic moments and magnetization energies increase monotonically when Si defects form a cluster. Partial density of states and standard Mulliken population analysis indicate that the half-metallic character and magnetic moments mainly arise from the Si 3p impurity states. The stoichiometric Si complexes are energetically unfavorable and non-magnetic. When charging the energetically favourable non-stoichiometric Si complexes, we find that the formation energies strongly depend on the impurity charge states and Fermi level position. We also find that the magnetic moments and orderings are tunable by charge state modulation q  =  -2, -1, 0, +1, +2. The induced half-metallic character is lost (retained) when charging isolated (clustered) Si defect(s). This underlines the potential of a Si doped hexagonal boron-nitride monolayer for novel spin-based applications.

  2. Temperature-controlled colossal magnetoresistance and perfect spin Seebeck effect in hybrid graphene/boron nitride nanoribbons.

    Science.gov (United States)

    Zhu, Lin; Li, Ruimin; Yao, Kailun

    2017-02-01

    Thermal spin transport properties of graphene and hexagonal boron nitride nanoribbon heterojunctions have been investigated using density functional theory calculations combined with the Keldysh nonequilibrium Green's function approach. The results showed that the perfect spin Seebeck effect and analogy negative differential thermoelectric resistance occurred in the device under a temperature difference without a gate or bias voltage. An intriguing thermally induced colossal magnetoresistance without gate regulation was also observed, which can be switched between a positive and negative value with temperature control. It was also found that the unit number of zigzag graphene nanoribbons and boron nitride nanoribbons can tune the electronic band structure and the energy gap of the heterostructure, and then modulate the thermal spin transport properties. The results suggest that graphene and hexagonal boron nitride nanoribbon heterostructures may have potential applications in graphene-based nanodevices.

  3. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; van Bael, Marlies K.; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I.-Nan; Haenen, Ken

    2016-07-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  4. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-07-11

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  5. Polymer-Derived Boron Nitride: A Review on the Chemistry, Shaping and Ceramic Conversion of Borazine Derivatives

    Directory of Open Access Journals (Sweden)

    Samuel Bernard

    2014-11-01

    Full Text Available Boron nitride (BN is a III-V compound which is the focus of important research since its discovery in the early 19th century. BN is electronic to carbon and thus, in the same way that carbon exists as graphite, BN exists in the hexagonal phase. The latter offers an unusual combination of properties that cannot be found in any other ceramics. However, these properties closely depend on the synthesis processes. This review states the recent developments in the preparation of BN through the chemistry, shaping and ceramic conversion of borazine derivatives. This concept denoted as Polymer-Derived Ceramics (PDCs route allows tailoring the chemistry of precursors to elaborate complex BN shapes which cannot be obtained by conventional process. The effect of the chemistry of the molecular precursors, i.e., borazine and trichloroborazine, and their polymeric derivatives i.e., polyborazylene and poly[tri(methylaminoborazine], in which the specific functional groups and structural motifs determine the shaping potential by conventional liquid-phase process and plastic-forming techniques is discussed. Nanotubes, nano-fibers, coatings, monoliths and fiber-reinforced matrix composites are especially described. This leads to materials which are of significant engineering interest.

  6. Search for giant magnetic anisotropy in transition-metal dimers on defected hexagonal boron nitride sheet

    Science.gov (United States)

    Li, J.; Wang, H.; Hu, J.; Wu, R. Q.

    2016-05-01

    Structural and magnetic properties of many transition-metal dimers embedded in a defected hexagonal boron nitride monolayer are investigated through density functional calculations to search for systems with magnetic anisotropy energies (MAEs) larger than 30meV. In particular, Ir-Ir@Dh-BN is found to have both large MAE (˜126 meV) and high structural stability against dissociation and diffusion, and it hence can serve as magnetic unit in spintronics and quantum computing devices. This giant MAE mainly results from the spin orbit coupling and the magnetization of the upper Ir atom, which is in a rather isolated environment.

  7. Science and technology in the recent development of boron nitride materials

    CERN Document Server

    Fukunaga, O

    2002-01-01

    In this paper, we review recent developments relating to cubic boron nitride (cBN) abrasive grains and sintered cutting tools. The demand for high-speed machining and the ecological benefits of using ferrous materials have led to developments in the area of heavy-duty dry cutting and grinding processes in recent years. Optimization of the process of manufacturing cBN materials is an important issue, both fundamentally and as regards applications. We review recent developments in cBN applications and discuss the challenges arising from new processes encountered in basic cBN study at high pressure and high temperature.

  8. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    Science.gov (United States)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  9. Nanochannel arrays etched into hexagonal boron nitride mesa-membranes by focused ion beam

    Science.gov (United States)

    Fulcrand, Remy; Linas, Sébastien; Cauwet, François; Poinsot, Blaise; Brioude, Arnaud

    2016-11-01

    Meso-membranes with highly ordered nano channel arrays have been fabricated by patterning hexagonal boron nitride (h-BN) films using a focused ion beam. The complete experimental procedure will be given in detail form the chemical vapor deposition for h-BN synthesis to its patterning and the final membrane design for nanofluidic experiments. The membranes obtained are characterized at each experimental step by electron microscopy and Raman spectroscopy. The technique is finally applied to fabricate devices in which the only passage for a fluid is a nano channel array etched into a h-BN film.

  10. First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon

    Science.gov (United States)

    Bahadur, Amar; Verma, Mohan L.; Mishra, Madhukar

    2015-04-01

    Using first principle calculation, we investigate the structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon (ZBNNR). Our results show that the shift in position of silicon doping with respect to the ribbon edge causes change in the structural geometry, electronic structure and magnetization of ZBNNR. The band gap of silicon doped ZBNNR is found to become narrower as compared to that of perfect ZBNNR. We find that band gap and magnetic moment of ZBNNR can be tuned by substitutional silicon doping position and doping concentration.

  11. Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures

    Science.gov (United States)

    Coguill, Scott L.; Adams, Donald F.; Zimmerman, Richard S.

    1989-01-01

    Six types of uncoated ceramic fibers were static tensile and tensile creep tested at various elevated temperatures. Three types of boron nitride coated fibers were also tested. Room temperature static tensile tests were initially performed on all fibers, at gage lengths of 1, 2, and 4 inches, to determine the magnitude of end effects from the gripping system used. Tests at one elevated temperature, at gage lengths of 8 and 10 inches, were also conducted, to determine end effects at elevated temperatures. Fiber cross sectional shapes and areas were determined using scanning electron microscopy. Creep testing was typically performed for 4 hours, in an air atmosphere.

  12. Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects

    OpenAIRE

    Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu

    2013-01-01

    We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms embedded on both sides {2, 4 and 6 BN on each side} on the GNR. The material properties like band gap, effective mass and density of states of these H-passivated structures have been evaluated using the Density Functional Theory {DFT}. Using these material parameters, ...

  13. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Gaskell, J.; Fromhold, T. M.; Greenaway, M. T. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Eaves, L. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Novoselov, K. S.; Mishchenko, A. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Geim, A. K. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-09-07

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  14. Effect of acoustic, deformation on radiation-induced luminescence of pyrolytic boron nitride

    CERN Document Server

    Kardashev, B K; Plaksin, O A; Stepanov, V A; Stepanov, P A; Chernov, V M

    2001-01-01

    The effect of the ultrasound oscillations with the frequency of approximately 100 kHz on the radiation-induced luminescence on the pyrolytic boron nitride, originating by the protons irradiation (the energy of 8 MeV, the flux of 1.6 x 10 sup 1 sup 2 p/cm s), is studied. The impact of the ultrasound oscillations manifests itself by high deformation amplitudes (approximately 10 sup - sup 4), when the nonlinear, amplitude-dependent ultrasound absorption is observed. The obtained data are explained by the change in the kinetics of recrystallization, induced by irradiation, whereby the disappearance (radiation annealing) of the small angle boundaries occurs

  15. Ab Initio Investigations of Thermoelectric Effects in Graphene – Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    Visan Camelia

    2016-01-01

    Full Text Available Thermoelectric effects of graphene – hexagonal boron nitride (hBN nanoribbons have been investigated by density functional theory (DFT calculations. Pristine zig-zag nanoribbons are not suited to achieve high thermopower as the transmission function is flat around the chemical potential. By introducing hBN inclusions, the nanoribbon systems exhibit enhanced thermopower, due to the asymmetries introduced in the spin dependent transmission functions. Finite temperature differences between the two contacts are considered. The possibility of a good integration of hBN into graphene, makes the hybrid systems suitable for thermoelectric applications, which may be subject to further optimizations.

  16. Large-scale fabrication and utilization of novel hexagonal/turbostratic composite boron nitride nanosheets

    KAUST Repository

    Zhong, Bo

    2017-02-15

    In this report, we have developed a scalable approach to massive synthesis of hexagonal/turbostratic composite boron nitride nanosheets (h/t-BNNSs). The strikingly effective, reliable, and high-throughput (grams) synthesis is performed via a facile chemical foaming process at 1400°C utilizing ammonia borane (AB) as precursor. The characterization results demonstrate that high quality of h/t-BNNSs with lateral size of tens of micrometers and thickness of tens of nanometers are obtained. The growth mechanism of h/t-BNNSs is also discussed based on the thermogravimetric analysis of AB which clearly shows two step weight loss. The h/t-BNNSs are further used for making thermoconductive h/t-BNNSs/epoxy resin composites. The thermal conductivity of the composites is obviously improved due to the introduction of h/t-BNNSs. Consideration of the unique properties of boron nitride, these novel h/t-BNNSs are envisaged to be very valuable for future high performance polymer based material fabrication.

  17. Oxygen- and Lithium-Doped Hybrid Boron-Nitride/Carbon Networks for Hydrogen Storage.

    Science.gov (United States)

    Shayeganfar, Farzaneh; Shahsavari, Rouzbeh

    2016-12-20

    Hydrogen storage capacities have been studied on newly designed three-dimensional pillared boron nitride (PBN) and pillared graphene boron nitride (PGBN). We propose these novel materials based on the covalent connection of BNNTs and graphene sheets, which enhance the surface and free volume for storage within the nanomaterial and increase the gravimetric and volumetric hydrogen uptake capacities. Density functional theory and molecular dynamics simulations show that these lithium- and oxygen-doped pillared structures have improved gravimetric and volumetric hydrogen capacities at room temperature, with values on the order of 9.1-11.6 wt % and 40-60 g/L. Our findings demonstrate that the gravimetric uptake of oxygen- and lithium-doped PBN and PGBN has significantly enhanced the hydrogen sorption and desorption. Calculations for O-doped PGBN yield gravimetric hydrogen uptake capacities greater than 11.6 wt % at room temperature. This increased value is attributed to the pillared morphology, which improves the mechanical properties and increases porosity, as well as the high binding energy between oxygen and GBN. Our results suggest that hybrid carbon/BNNT nanostructures are an excellent candidate for hydrogen storage, owing to the combination of the electron mobility of graphene and the polarized nature of BN at heterojunctions, which enhances the uptake capacity, providing ample opportunities to further tune this hybrid material for efficient hydrogen storage.

  18. Melting and spheroidization of hexagonal boron nitride in a microwave-powered, atmospheric pressure nitrogen plasma `

    Energy Technology Data Exchange (ETDEWEB)

    Gleiman, S. S. (Seth S.); Phillips, J. (Jonathan)

    2001-01-01

    We have developed a method for producing spherically-shaped, hexagonal phase boron nitride (hBN) particles of controlled diameter in the 10-100 micron size range. Specifically, platelet-shaped hBN particles are passed as an aerosol through a microwave-generated, atmospheric pressure, nitrogen plasma. In the plasma, agglomerates formed by collisions between input hBN particles, melt and forms spheres. We postulate that this unprecedented process takes place in the unique environment of a plasma containing a high N-atom concentration, because in such an environment the decomposition temperature can be raised above the melting temperature. Indeed, given the following relationship [1]: BN{sub (condensed)} {leftrightarrow} B{sub (gas)} + N{sub (gas)}. Standard equilibrium thermodynamics indicate that the decomposition temperature of hBN is increased in the presence of high concentrations of N atoms. We postulate that in our plasma system the N atom concentration is high enough to raise the decomposition temperature above the (undetermined) melting temperature. Keywords Microwave plasma, boron nitride, melting, spherical, thermodynamics, integrated circuit package.

  19. Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets.

    Science.gov (United States)

    Aldalbahi, Ali; Zhou, Andrew Feng; Feng, Peter

    2015-11-13

    We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure, and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B3-N3 hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation.

  20. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  1. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren;

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  2. Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

    CERN Document Server

    Museur, Luc; Petitet, Jean-Pierre; Michel, Jean Pierre; Kanaev, Andrei V

    2008-01-01

    We report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (VN), or multiple (m-VN with m = 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 nm and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to VN vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ~400 nm assigned to m-VN vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation o...

  3. Irradiation studies on carbon nanotube-reinforced boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Aitkaliyeva, Assel [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); McCarthy, Michael C.; Jeong, Hae-Kwon [Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Shao, Lin, E-mail: lshao@ne.tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); Department of Nuclear Engineering, Texas A and M University, College Station, TX 77843 (United States)

    2012-02-01

    Radiation response of carbon nanotube (CNT) reinforced boron carbide composite has been studied for its application as a structural component in nuclear engineering. The composite was bombarded by 140 keV He ions at room temperature to a fluence ranging from 1 Multiplication-Sign 10{sup 14} to 1 Multiplication-Sign 10{sup 17} cm{sup -2}. Two-dimensional Raman mapping shows inhomogeneous distribution of CNTs, and was used to select regions of interest for damage characterization. For CNTs, the intensities ratio of D-G bands (I{sub D}/I{sub G}) increased with fluence up to a certain value, and decreased at the fluence of 5 Multiplication-Sign 10{sup 16} cm{sup -2}. This fluence also corresponds to a trend break in the plot of FWHM (full width at half maximum) of G band vs. I{sub D}/I{sub G} ratio, which indicates amorphization of CNTs. The study shows that Raman spectroscopy is a powerful tool to quantitatively characterize radiation damage in CNT-reinforced composites.

  4. Tantalum (oxy)nitrides nanotube arrays for the degradation of atrazine in vis-Fenton-like process

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingxun, E-mail: yxdu@niglas.ac.cn [Nanjing Institute of Geography and Limnology, State Key Laboratory of Lake Science and Environment, Chinese Academy of Sciences, Nanjing 210008 (China); Zhao, Lu [Nanjing Institute of Geography and Limnology, State Key Laboratory of Lake Science and Environment, Chinese Academy of Sciences, Nanjing 210008 (China); Chang, Yuguang [School of Biochemical and Environmental Engineering, Nanjing Xiaozhuang Univeristy, Nanjing 211171 (China); Su, Yaling [Nanjing Institute of Geography and Limnology, State Key Laboratory of Lake Science and Environment, Chinese Academy of Sciences, Nanjing 210008 (China)

    2012-07-30

    Highlights: Black-Right-Pointing-Pointer Tantala nanotubes on a Ta foil were formed by anodization in a NH{sub 4}F-containing electrolyte. Black-Right-Pointing-Pointer Tantalum (oxy)nitrides nanotubes were active for Fe{sup 3+} reduction under visible light. Black-Right-Pointing-Pointer Atrazine degradation by {center_dot}OH was accelerated with tantalum (oxy)nitrides nanotubes. Black-Right-Pointing-Pointer Tantalum (oxy)nitrides nanotubes display stable performance for atrazine degradation. - Abstract: In order to overcome the limitation of the application of nanoparticles, tantalum (oxy)nitrides nanotube arrays on a Ta foil were synthesized and introduced in vis (visible light)-Fenton-like system to enhance the degradation of atrazine. At first, the anodization of tantalum foil in a mild electrolyte solution containing ethylene glycol and water (v:v = 2:1) plus 0.5 wt.% NH{sub 4}F produced tantala nanotubes with an average diameter of 30 nm and a length of approximately 1 {mu}m. Then the nitridation of tantala nanotube arrays resulted in the replacement of N atoms to O atoms to form tantalum (oxy)nitrides (TaON and Ta{sub 3}N{sub 5}), as testified by XRD and XPS analyses. The synthesized tantalum (oxy)nitrides nanotubes absorb well in the visible region up to 600 nm. Under visible light, tantalum (oxy)nitrides nanotube arrays were catalytically active for Fe{sup 3+} reduction. With tantalum (oxy)nitrides nanotube arrays, the degradation of atrazine and the formation of the intermediates in vis/Fe{sup 3+}/H{sub 2}O{sub 2} system were significantly accelerated. This was explained by the higher concentration of Fe{sup 2+} and thus the faster decomposition of H{sub 2}O{sub 2} with tantalum (oxy)nitrides nanotubes. In addition, tantalum (oxy)nitrides nanotubes exhibited stable performance during atrazine degradation for three runs. The good performance and stability of the tantalum (oxy)nitrides nanotubes film with the convenient separation, suggest that this film is

  5. Tantalum (oxy)nitrides nanotube arrays for the degradation of atrazine in vis-Fenton-like process.

    Science.gov (United States)

    Du, Yingxun; Zhao, Lu; Chang, Yuguang; Su, Yaling

    2012-07-30

    In order to overcome the limitation of the application of nanoparticles, tantalum (oxy)nitrides nanotube arrays on a Ta foil were synthesized and introduced in vis (visible light)-Fenton-like system to enhance the degradation of atrazine. At first, the anodization of tantalum foil in a mild electrolyte solution containing ethylene glycol and water (v:v=2:1) plus 0.5wt.% NH(4)F produced tantala nanotubes with an average diameter of 30nm and a length of approximately 1μm. Then the nitridation of tantala nanotube arrays resulted in the replacement of N atoms to O atoms to form tantalum (oxy)nitrides (TaON and Ta(3)N(5)), as testified by XRD and XPS analyses. The synthesized tantalum (oxy)nitrides nanotubes absorb well in the visible region up to 600nm. Under visible light, tantalum (oxy)nitrides nanotube arrays were catalytically active for Fe(3+) reduction. With tantalum (oxy)nitrides nanotube arrays, the degradation of atrazine and the formation of the intermediates in vis/Fe(3+)/H(2)O(2) system were significantly accelerated. This was explained by the higher concentration of Fe(2+) and thus the faster decomposition of H(2)O(2) with tantalum (oxy)nitrides nanotubes. In addition, tantalum (oxy)nitrides nanotubes exhibited stable performance during atrazine degradation for three runs. The good performance and stability of the tantalum (oxy)nitrides nanotubes film with the convenient separation, suggest that this film is a promising catalyst for vis-Fenton-like degradation.

  6. Enhancing Thermal Conductivity of Hexagonal Boron Nitride Filled Thermoplastics for Thermal Interface Management

    Science.gov (United States)

    Prindl, John

    Hexagonal Boron Nitride has been shown to enhance thermal conductivity in polymer composites more so than conventional ceramic fillers. However, to see a significant increase in thermal conductivity a high loading level of the advanced ceramic is often needed which can have an adverse effect on the mechanical behavior of the composite part. Applications for thermal management using thermal interface materials (TIM) continue to grow with thermoplastic injection molded parts emerging as an area for market growth. There is a growing need for published technical data in this particular area of application. In the current study, the thermal conductivity and mechanical behavior of hexagonal Boron Nitride (hBN) loaded thermoplastic composites is investigated. The main objectives of this work is produce a novel data package which illustrates the effects of hBN, loaded at high concentrations, across several different thermoplastic resins with the ultimate goal being to find a desirable formulation for specific thermal management applications. The desired properties for such applications being high thermal conductivity and high electrical resistivity with a minimal decrease in mechanical properties. Hexagonal BN cooling filler agglomerates were compounded into polypropylene (PP), nylon-6 (PA-6), and thermoplastic elastomer (TPE) via twin-screw extruder at 3 different loading levels. Injection molded samples were produced and characterized to show varying degrees of thermal conductivity and mechanical strength. Results from this research showed that in all cases, the thermal conductivity increased with increasing levels of hBN addition. The largest increases in thermal conductivity were seen in the PA-6 and TPE systems with the possible indication of exceeding the percolation threshold in the TPE system. This is hypothesized to occur due to the preferential migration of hBN to form conduction pathways around the elastomeric domains in the TPE matrix. Though TPE produced

  7. Hydrolysis Mechanism of Borazine-derived Boron Nitride ' Pyrolysized below 1200 ℃%Hydrolysis Mechanism of Borazine-derived Boron Nitride ' Pyrolysized below 1200 ℃

    Institute of Scientific and Technical Information of China (English)

    Feng Cao; Kun Liu; Zhenyu Fang; Siqing Wang

    2012-01-01

    Boron nitride (BN) powders were synthesized by pyrolysis at various temperatures to investigate the hydrolysis mechanism of borazine-derived BN pyrolysized below 1200 ℃. The BN was hydrolysized near room tem-perature at 65% or 90% relative humidity (RH) over 45 days. The long-term hydrolysis mechanism and structure evolution were investigated by a measurement of mass growth and by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, and scanning electron microscopy (SEM) analyses. The sam-ples pyrolysized below 1200 ℃ were very sensitive to moisture, and their mass growth was closely related to the pyrolysis temperature. At 25 ℃ and 65% RH, the sample pyrolysized at 400 ℃ exhibited almost 100 wt% mass growth within 8 days, while the sample pyrolysized at 1200 ℃ exhibited about 20 wt% mass growth. The XRD analysis suggested a hydrolysis mechanism that corresponded to the interlayer spacing in the BN, which was consistent with the results reported. should be directly due to the residual N-H bonds On the other hand, the instability of borazine-derived BN in the compound, as suggested by FT-IR analysis.

  8. Effects of boron-doping on the morphology and magnetic property of carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    JIANG Qi; QIAN Lan; YI Jing; ZHU Xiaotong; ZHAO Yong

    2007-01-01

    Boron carbide nanotubes (nano-fibers) was prepared by B powder and carbon nanotubes (CNTs) at high temperature in a vacuumed quartz tube.The morphology,microstructure,component and magnetic property of samples were characterized by transmission electron microscopy (TEM),X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and magnetic property measurement system (MPMS) controller.The results showed that B-doping CNTs have great difference in the morphology and magnetic property from those of pristine CNTs.

  9. NaOH-embedded three-dimensional porous boron nitride for efficient formaldehyde removal

    Science.gov (United States)

    Li, Jie; Jia, Huichao; Ding, Yushi; Luo, Han; Abbas, Saleem; Liu, Zhenya; Hu, Long; Tang, Chengchun

    2015-11-01

    Volatile organic compounds, especially formaldehyde (HCHO), are considered to be great sources of contaminants in indoor air. However, design and preparation of safe, cost-affordable, and reusable materials for HCHO removal at ambient conditions are still remarkably challenging. Here, we have developed a kind of novel NaOH-embedded three-dimensional porous boron nitride (NaOH-3D BN) with high and hierarchical porosities, which exhibit excellent removal performance for HCHO. The as-prepared 3D BN is used as an adsorbent and catalytic support, while the embedded NaOH is applied as a catalyst, giving rise to catalytic transformation from high-toxic HCHO to less-toxic formate and methoxy salts at room temperature. Furthermore, their effective reusability has been confirmed. Given the high removal and reusability performance as well as no use of precious materials, the NaOH-3D BN is envisaged to be valuable practically for indoor air purification.

  10. Imaging of Anomalous Internal Reflections of Hyperbolic Phonon-Polaritons in Hexagonal Boron Nitride.

    Science.gov (United States)

    Giles, Alexander J; Dai, Siyuan; Glembocki, Orest J; Kretinin, Andrey V; Sun, Zhiyuan; Ellis, Chase T; Tischler, Joseph G; Taniguchi, Takashi; Watanabe, Kenji; Fogler, Michael M; Novoselov, Kostya S; Basov, Dimitri N; Caldwell, Joshua D

    2016-06-08

    We use scanning near-field optical microscopy to study the response of hexagonal boron nitride nanocones at infrared frequencies, where this material behaves as a hyperbolic medium. The obtained images are dominated by a series of "hot" rings that occur on the sloped sidewalls of the nanocones. The ring positions depend on the incident laser frequency and the nanocone shape. Both dependences are consistent with directional propagation of hyperbolic phonon-polariton rays that are launched at the edges and zigzag through the interior of the nanocones, sustaining multiple internal reflections off the sidewalls. Additionally, we observe a strong overall enhancement of the near-field signal at discrete resonance frequencies. These resonances attest to low dielectric losses that permit coherent standing waves of the subdiffractional polaritons to form. We comment on potential applications of such shape-dependent resonances and the field concentration at the hot rings.

  11. Synthesis and characterization of boron nitride sponges as a novel support for metal nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    This paper describes a simple synthetic route for the synthesis of hexagonal boron nitride (h-BN) powders with high specific surface area, in which BBr3, NH4Cl and Al powders are used as starting materials. The structure and composition of the powders were characterized by electron diffraction, Fourier transformation infrared spectroscopy and X-ray photoelectron spectroscopy in the selected area. X-ray diffraction shows wide peaks of crystalline h-BN with the particle size on the nanometer scale, and transmission electron microscopy reveals that the products have a novel spongy morphology. Silver nanoparticles loaded h-BN sponges were prepared via a one-step synthesis method. Different reaction conditions for the formation of h-BN sponges were also investigated.

  12. Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

    Indian Academy of Sciences (India)

    PENCHALAIAH PALLA; GOPI RAJA UPPU; ANITA S ETHIRAJ; J P RAINA

    2016-10-01

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

  13. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J., E-mail: lopes@pdi-berlin.de; Riechert, H. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  14. Real-time oxide evolution of copper protected by graphene and boron nitride barriers

    DEFF Research Database (Denmark)

    Galbiati, Miriam; Stoot, Adam Carsten; Mackenzie, David

    2017-01-01

    Applying protective or barrier layers to isolate a target item from the environment is a common approach to prevent or delay its degradation. The impermeability of two-dimensional materials such as graphene and hexagonal boron nitride (hBN) has generated a great deal of interest in corrosion...... and material science. Owing to their different electronic properties (graphene is a semimetal, whereas hBN is a wide-bandgap insulator), their protection behaviour is distinctly different. Here we investigate the performance of graphene and hBN as barrier coatings applied on copper substrates through a real......-time study in two different oxidative conditions. Our findings show that the evolution of the copper oxidation is remarkably different for the two coating materials....

  15. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    Science.gov (United States)

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-01-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. PMID:27681943

  16. Synthesis and characterization of boron nitride sponges as a novel support for metal nanoparticles

    Institute of Scientific and Technical Information of China (English)

    ZHENG MingTao; LIU YingLiang; GU YunLe; XU ZiLin

    2008-01-01

    This paper describes a simple synthetic route for the synthesis of hexagonal boron nitride (h-BN) powders with high specific surface area, in which BBr3, NH4Cl and Al powders are used as starting materials. The structure and composition of the powders were characterized by electron diffraction, Fourier transformation infrared spectroscopy and X-ray photoelectron spectroscopy in the selected area. X-ray diffraction shows wide peaks of crystalline h-BN with the particle size on the nanometer scale, and transmission electron microscopy reveals that the products have a novel spongy morphol-ogy. Silver nanoparticles loaded h-BN sponges were prepared via a one-step synthesis method. Dif-ferent reaction conditions for the formation of h-BN sponges were also investigated.

  17. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  18. Thermal Conductivity Performance of Polypropylene Composites Filled with Polydopamine-Functionalized Hexagonal Boron Nitride.

    Science.gov (United States)

    Chen, Lin; Xu, Hong-Fei; He, Shao-Jian; Du, Yi-Hang; Yu, Nan-Jie; Du, Xiao-Ze; Lin, Jun; Nazarenko, Sergei

    2017-01-01

    Mussel-inspired approach was attempted to non-covalently functionalize the surfaces of boron nitride (BN) with self-polymerized dopamine coatings in order to reduce the interfacial thermal barrier and enhance the thermal conductivity of BN-containing composites. Compared to the polypropylene (PP) composites filled with pristine BN at the same filler content, thermal conductivity was much higher for those filled with both functionalized BN (f-BN) and maleic anhydride grafted PP (PP-g-ma) due to the improved filler dispersion and better interfacial filler-matrix compatibility, which facilitated the development of more thermal paths. Theoretical models were also applied to predict the composite thermal conductivity in which the Nielsen model was found to fit well with the experimental results, and the estimated effective aspect ratio of fillers well corresponded to the degree of filler aggregation as observed in the morphological study.

  19. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  20. Influence of Thickness on Field Emission Characteristics of Nanometre Boron Nitride Thin Films

    Institute of Scientific and Technical Information of China (English)

    顾广瑞; 李英爱; 陶艳春; 何志; 李俊杰; 殷红; 李卫青; 赵永年

    2003-01-01

    Nanometre boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 240 μA/cm2 at an electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.

  1. Forchlorfenuron detection based on its inhibitory effect towards catalase immobilized on boron nitride substrate.

    Science.gov (United States)

    Xu, Qin; Cai, Lijuan; Zhao, Huijie; Tang, Jiaqian; Shen, Yuanyuan; Hu, Xiaoya; Zeng, Haibo

    2015-01-15

    An enzymatic procedure based on a catalase biosensor for the detection of forchlorfenuron (CPPU) has been reported in this work. Catalase was immobilized on boron nitride (BN) sheets dispersed in chitosan by adsorption. The immobilized catalase exhibited direct electron transfer character and excellent electrocatalytic activity towards H2O2 reduction. After introducing CPPU into the H2O2 containing phosphate buffer solution, the catalase-catalyzed H2O2 reduction current decreased. By measuring the current decrease, CPPU can be determined in the range of 0.5-10.0 µM with the detection limit of 0.07 μM. The non-competitive inhibition behavior of CPPU towards catalase was verified by the Lineweaver-Burk plots. Long stability character has been ascribed to this biosensor. Possible use of this biosensor in flow systems is illustrated. The proposed biosensor has been successfully applied to CPPU determination in fruits samples with satisfactory results.

  2. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    G. A. Nemnes

    2012-01-01

    Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

  3. Direct observation of the band structure in bulk hexagonal boron nitride

    Science.gov (United States)

    Henck, Hugo; Pierucci, Debora; Fugallo, Giorgia; Avila, José; Cassabois, Guillaume; Dappe, Yannick J.; Silly, Mathieu G.; Chen, Chaoyu; Gil, Bernard; Gatti, Matteo; Sottile, Francesco; Sirotti, Fausto; Asensio, Maria C.; Ouerghi, Abdelkarim

    2017-02-01

    A promising route towards nanodevice applications relies on the association of graphene and transition metal dichalcogenides with hexagonal boron nitride (h -BN ). Due to its insulating nature, h -BN has emerged as a natural substrate and gate dielectric for graphene-based electronic devices. However, some fundamental properties of bulk h -BN remain obscure. For example, the band structure and the position of the Fermi level have not been experimentally resolved. Here, we report a direct observation of parabolic dispersions of h -BN crystals using high-resolution angle-resolved photoemission spectroscopy (ARPES). We find that h -BN exfoliation on epitaxial graphene enables overcoming the technical difficulties of using ARPES with insulating materials. We show trigonal warping of the intensity maps at constant energy. The valence-band maxima are located around the K points, 2.5 eV below the Fermi level, thus confirming the residual p -type character of typical h -BN .

  4. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  5. Li-air, rechargeable, solid-state batteries using graphene and boron nitride aerogel matrices

    Science.gov (United States)

    Ergen, Onur; Thoan Pham, Thang; Demaio-Turner, Sally; Zettl, Alex

    The recent explosion of research on Li-Air batteries has provided new insights into developing more efficient air cathodes. Graphene and boron nitride aerogel matrix is anticipated to be an ideal candidate to produce a high throughput air-breathing system. We developed a Li-Air battery model that accounts for efficient O2 throughput. These unique aerogel matrices exhibit the ability to orient the O2 passing through and keep out H2O, CO2, and N2. Thus, the solid-state cells demonstrate a long cycle life, thermal stability, and high rechargeable characteristics. These cells also show an explicit discharge capacity with a constant discharge current density of 0.1mA/cm2. 1 Department of Physics, University of California at Berkeley, Ca 94720, USA 2 Materials Sciences Division, Lawrence Berkeley National Laboratory, Ca, 94720, USA 3 Kavli Energy Nanosciences Institute at the University of California, Berkeley, Ca, 94720, US.

  6. Thermal Conductivity Performance of Polypropylene Composites Filled with Polydopamine-Functionalized Hexagonal Boron Nitride

    Science.gov (United States)

    Xu, Hong-Fei; He, Shao-Jian; Du, Yi-Hang; Yu, Nan-Jie; Du, Xiao-Ze; Lin, Jun; Nazarenko, Sergei

    2017-01-01

    Mussel-inspired approach was attempted to non-covalently functionalize the surfaces of boron nitride (BN) with self-polymerized dopamine coatings in order to reduce the interfacial thermal barrier and enhance the thermal conductivity of BN-containing composites. Compared to the polypropylene (PP) composites filled with pristine BN at the same filler content, thermal conductivity was much higher for those filled with both functionalized BN (f-BN) and maleic anhydride grafted PP (PP-g-ma) due to the improved filler dispersion and better interfacial filler-matrix compatibility, which facilitated the development of more thermal paths. Theoretical models were also applied to predict the composite thermal conductivity in which the Nielsen model was found to fit well with the experimental results, and the estimated effective aspect ratio of fillers well corresponded to the degree of filler aggregation as observed in the morphological study. PMID:28107466

  7. New two-dimensional boron nitride allotropes with attractive electronic and optical properties

    Science.gov (United States)

    Shahrokhi, Masoud; Mortazavi, Bohayra; Berdiyorov, Golibjon R.

    2017-03-01

    Using first principles calculations, structural, electronic and optical properties of five new 2D boron nitride (BN) allotropes have been studied. The results exhibit that the cohesive energy for all these five new allotrope is positive such as all these systems are stable; therefore, it is possible to synthesize these structures in experiments. It is found that the band gap of all new 2D BN allotropes is smaller than the h-BN sheet. In our calculations the dielectric tensor is derived within the random phase approximation (RPA). Specifically, the dielectric function, refraction index and the loss function, of the 2D BN allotropes are calculated for both parallel and perpendicular electric field polarizations. The results show that the optical spectra are anisotropic along these two polarizations. The results obtained from our calculations are beneficial to practical applications of these 2D BN allotropes in optoelectronics and electronics.

  8. Real-time oxide evolution of copper protected by graphene and boron nitride barriers

    Science.gov (United States)

    Galbiati, M.; Stoot, A. C.; MacKenzie, D. M. A.; Bøggild, P.; Camilli, L.

    2017-01-01

    Applying protective or barrier layers to isolate a target item from the environment is a common approach to prevent or delay its degradation. The impermeability of two-dimensional materials such as graphene and hexagonal boron nitride (hBN) has generated a great deal of interest in corrosion and material science. Owing to their different electronic properties (graphene is a semimetal, whereas hBN is a wide-bandgap insulator), their protection behaviour is distinctly different. Here we investigate the performance of graphene and hBN as barrier coatings applied on copper substrates through a real-time study in two different oxidative conditions. Our findings show that the evolution of the copper oxidation is remarkably different for the two coating materials.

  9. Epitaxial growth of a single-domain hexagonal boron nitride monolayer.

    Science.gov (United States)

    Orlando, Fabrizio; Lacovig, Paolo; Omiciuolo, Luca; Apostol, Nicoleta G; Larciprete, Rosanna; Baraldi, Alessandro; Lizzit, Silvano

    2014-12-23

    We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T=1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T=1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.

  10. Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

    Directory of Open Access Journals (Sweden)

    Peter Feng

    2014-07-01

    Full Text Available We report studies of the surface fringe structures and tunable bandgap width of atomic-thin boron nitride nanosheets (BNNSs. BNNSs are synthesized by using digitally controlled pulse deposition techniques. The nanoscale morphologies of BNNSs are characterized by using scanning electron microscope (SEM, and transmission electron microscopy (TEM. In general, the BNNSs appear microscopically flat in the case of low temperature synthesis, whereas at high temperature conditions, it yields various curved structures. Experimental data reveal the evolutions of fringe structures. Functionalization of the BNNSs is completed with hydrogen plasma beam source in order to efficiently control bandgap width. The characterizations are based on Raman scattering spectroscopy, X-ray diffraction (XRD, and FTIR transmittance spectra. Red shifts of spectral lines are clearly visible after the functionalization, indicating the bandgap width of the BNNSs has been changed. However, simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs.

  11. Efficient single photon emission from a high-purity hexagonal boron nitride crystal

    Science.gov (United States)

    Martínez, L. J.; Pelini, T.; Waselowski, V.; Maze, J. R.; Gil, B.; Cassabois, G.; Jacques, V.

    2016-09-01

    Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically active defects owing to its large band gap (˜6 eV ). Here we study the optical response of a high-purity hBN crystal under green laser illumination. By means of photon correlation measurements, we identify individual defects emitting a highly photostable fluorescence under ambient conditions. A detailed analysis of the photophysical properties reveals a high quantum efficiency of the radiative transition, leading to a single photon source with very high brightness (˜4 ×106 counts s-1). These results illustrate how the wide range of applications offered by hBN could be further extended to photonic-based quantum information science and metrology.

  12. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching

    Science.gov (United States)

    Wang, Guole; Wu, Shuang; Zhang, Tingting; Chen, Peng; Lu, Xiaobo; Wang, Shuopei; Wang, Duoming; Watanabe, Kenji; Taniguchi, Takashi; Shi, Dongxia; Yang, Rong; Zhang, Guangyu

    2016-08-01

    Graphene nanostructures are potential building blocks for nanoelectronic and spintronic devices. However, the production of monolayer graphene nanostructures with well-defined zigzag edges remains a challenge. In this paper, we report the patterning of monolayer graphene nanostructures with zigzag edges on hexagonal boron nitride (h-BN) substrates by an anisotropic etching technique. We found that hydrogen plasma etching of monolayer graphene on h-BN is highly anisotropic due to the inert and ultra-flat nature of the h-BN surface, resulting in zigzag edge formation. The as-fabricated zigzag-edged monolayer graphene nanoribbons (Z-GNRs) with widths below 30 nm show high carrier mobility and width-dependent energy gaps at liquid helium temperature. These high quality Z-GNRs are thus ideal structures for exploring their valleytronic or spintronic properties.

  13. Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

    Science.gov (United States)

    Singh, Simranjeet; Katoch, Jyoti; Xu, Jinsong; Tan, Cheng; Zhu, Tiancong; Amamou, Walid; Hone, James; Kawakami, Roland

    2016-09-01

    We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.

  14. Engineering and localization of quantum emitters in large hexagonal boron nitride layers

    CERN Document Server

    Choi, Sumin; ElBadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.

  15. Molecular dynamics simulation of nano-indentation of (111) cubic boron nitride with optimized Tersoff potential

    Science.gov (United States)

    Zhao, Yinbo; Peng, Xianghe; Fu, Tao; Huang, Cheng; Feng, Chao; Yin, Deqiang; Wang, Zhongchang

    2016-09-01

    We conduct molecular dynamics simulation of nanoindentation on (111) surface of cubic boron nitride and find that shuffle-set dislocations slip along direction on {111} plane at the initial stage of the indentation. The shuffle-set dislocations are then found to meet together, forming surfaces of a tetrahedron. We also find that the surfaces are stacking-fault zones, which intersect with each other, forming edges of stair-rod dislocations along direction. Moreover, we also calculate the generalized stacking fault (GSF) energies along various gliding directions on several planes and find that the GSF energies of the {111} and {111} systems are relatively smaller, indicating that dislocations slip more easily along and directions on the {111} plane.

  16. Comparative study of the interfaces of graphene and hexagonal boron nitride with silver

    DEFF Research Database (Denmark)

    Garnica, Manuela; Schwarz, Martin; Ducke, Jacob

    2016-01-01

    Silver opens up interesting perspectives in the fabrication of complex systems based on heteroepitaxial layers after the growth of a silicene layer on its (111) face has been proposed. In this work we explore different synthesis methods of hexagonal boron nitride (h-BN) and graphene sheets......-principle calculations. We demonstrate that the adsorption of the 2D layers has an effect on the binding energy of the Shockley state and the surface potential by lowering the local work function. These effects are larger in the case of graphene where the surface state of Ag(111) is depopulated due to charge transfer...... to the graphene. Furthermore, we show that the electronic properties of the h-BN/silver system can be tuned by employing different thicknesses of silver ranging from a few monolayers on Cu(111) to the single crystal Ag substrate....

  17. Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution

    Science.gov (United States)

    Zhang, Jing; Yang, Yingchao; Lou, Jun

    2016-09-01

    Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

  18. Enhanced half-metallicity in orientationally misaligned graphene/hexagonal boron nitride lateral heterojunctions

    Science.gov (United States)

    Zeng, Jiang; Chen, Wei; Cui, Ping; Zhang, Dong-Bo; Zhang, Zhenyu

    2016-12-01

    The ever increasing level of control in the fabrication of graphene/hexagonal boron nitride (h -BN) lateral heterostructures makes it promising for material realization of exotic electronic and spintronic properties of graphene. Yet recent first-principles studies have revealed that the pronounced half-metallicity expected for electrically biased freestanding graphene nanoribbons is severely suppressed when the lateral heterostructures are orientationally aligned. By properly tailoring the orientational misalignment between zigzag graphene and chiral h -BN nanoribbons, here we show that the half-metallicity can be substantially enhanced from the aligned case, back to be comparable in magnitude with the freestanding case. In addition, the strain energy accumulation in such misaligned heterojunctions is significantly diminished, favoring physical realization of such structures. The restored half-metallicity is largely attributed to the recovered superexchange interaction between the electrons at the opposite heterojunction interfaces. The present findings may have important implications in the development of graphene-based spintronics.

  19. Effects of strain on carbon donors and acceptors in hexagonal boron nitride monolayers

    Science.gov (United States)

    Fujimoto, Yoshitaka; Saito, Susumu

    2016-01-01

    We present first-principles density functional calculations that clarify the electronic properties of carbon defects in hexagonal boron nitride (h -BN) monolayers under biaxially applied strains. We find that strain can control the ionization energies of both donor and acceptor states. Furthermore, we also find that strain can lead to the dramatic change in conduction channel properties of donor states due to the interchange of the conduction-band-minimum state with the nearly-free-electron state. We also report the simulated scanning tunneling microscopy (STM) images of carbon defects in h -BN monolayers for experimental identification of those defects. We show that the STM images strongly reflect distinctive spatial distributions of local density of states around carbon defects depending on the substitution sites and thereby they could be identified by using STM experiments.

  20. Catalytic self-assembly preparation and characterization of carbon nitride nanotubes by a solvothermal method

    Institute of Scientific and Technical Information of China (English)

    HUANG Fuling; CAO Chuanbao; ZHU Hesun

    2005-01-01

    A solvothermal reaction of anhydrous C3N3Cl3 and sodium using cyclohexane as solvent and NiCl2 as catalyst precursor has been carried out to prepare carbon nitride nanotubes successfully at 230℃ and 1.8 MPa. The carbon nitride nanotubes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction (ED), electron energy loss spectrum (EELS) and Raman spectrum. SEM and TEM results indicated that the tubes have a length of 20-30 μm, a uniform outer diameter of about 50-60 nm, an inner diameter of 30-40 nm and are highly ordered assembled as bundles. The EELS measurement indicated that the ratio of N/C was about 1.00. The ED and XRD analyses revealed that the tube may have a new CN crystalline structure. The growth mechanism of nanotubes was discussed.

  1. Surface functionalization of hexagonal boron nitride and its effect on the structure and performance of composites

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Wenqin; Zhang, Wei; Gao, Yuwen [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Liang, Guozheng, E-mail: lgzheng@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Gu, Aijuan, E-mail: ajgu@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Yuan, Li [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China)

    2013-04-01

    A new organized hexagonal boron nitride (OhBN) with significantly increased amount of amine groups was synthesized, and characterized by Fourier Transform Infrared (FTIR), X-ray Photoelectron Spectroscopy (XPS), Thermogravimetric (TG) analysis, UV–vis Transmittance Spectra, Transmission Electron Microscope (TEM) and the potentiometric titration. The content of amine groups for OhBN is about 5 times of that for original hexagonal boron nitride (hBN). Based on the preparation of OhBN, new composites consisting of OhBN and bismaleimide (BD) resin were developed, which show greatly improved integrated performance (including dynamic mechanical, dielectric and thermal properties) compared with BD resin and the hBN/BD composites. In the case of the OhBN/BD composite with 15 wt% OhBN, its storage modulus, dielectric loss, thermal conductivity and coefficient of thermal expansion are about 1.2, 0.56, 1.11 and 0.92 times of the corresponding values of hBN/BD composite, respectively; moreover, the glass transition temperature of the former is 15 °C higher than that of the latter. These interesting results suggest that the integrated performance of the composites is closely related to the surface nature of the fillers because the change in the surface nature not only varies the chemical structure, free volume and crosslinking density of the composite, but also determines the interfacial nature between inorganic fillers and the resin matrix. This investigation demonstrates that the method proposed herein provides a new approach to prepare organized inorganic fillers as well as corresponding composites with controlled structure and expected performances for cutting-edge industries.

  2. [FTIR spectroscopic studies of inner stress on boron carbon nitride thin films].

    Science.gov (United States)

    Wang, Yu-Xin; Zheng, Ya-Ru; Song, Zhe; Feng, Ke-Cheng; Zhao, Yong-Nian

    2008-07-01

    Boron carbon nitride thin films were deposited by radio frequency (RF) magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks: one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5 x 10(-4) Pa. During the deposition, the mixture of Ar (80%) and N2 (20%) was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 degrees C and deposition time of 1-4 h. The chemical bonding state of the samples was characterized by Fourier transform infrared absorption spectroscopy (FTIR). The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained: sputtering power of 80 W, deposition temperature of 400 degrees C and deposition time of 2 h.

  3. Folate-conjugated boron nitride nanospheres for targeted delivery of anticancer drug

    Directory of Open Access Journals (Sweden)

    Feng S

    2016-09-01

    Full Text Available Shini Feng,1 Huijie Zhang,1 Ting Yan,1 Dandi Huang,1 Chunyi Zhi,2 Hideki Nakanishi,1 Xiao-Dong Gao1 1Key Laboratory of Carbohydrate Chemistry and Biotechnology, Ministry of Education, School of Biotechnology, Jiangnan University, Wuxi, People’s Republic of China; 2Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People’s Republic of China Abstract: With its unique physical and chemical properties and structural similarity to carbon, boron nitride (BN has attracted considerable attention and found many applications. Biomedical applications of BN have recently started to emerge, raising great hopes in drug and gene delivery. Here, we developed a targeted anticancer drug delivery system based on folate-conjugated BN nanospheres (BNNS with receptor-mediated targeting. Folic acid (FA was successfully grafted onto BNNS via esterification reaction. In vitro cytotoxicity assay showed that BNNS-FA complexes were non-toxic to HeLa cells up to a concentration of 100 µg/mL. Then, doxorubicin hydrochloride (DOX, a commonly used anticancer drug, was loaded onto BNNS-FA complexes. BNNS-FA/DOX complexes were stable at pH 7.4 but effectively released DOX at pH 5.0, which exhibited a pH sensitive and sustained release pattern. BNNS-FA/DOX complexes could be recognized and specifically internalized by HeLa cells via FA receptor-mediated endocytosis. BNNS-FA/DOX complexes exhibited greater cytotoxicity to HeLa cells than free DOX and BNNS/DOX complexes due to the increased cellular uptake of DOX mediated by the FA receptor. Therefore, BNNS-FA complexes had strong potential for targeted cancer therapy. Keywords: boron nitride nanospheres, folic acid, doxorubicin, targeted delivery, cancer therapy

  4. Direct determination of trace elements in boron nitride powders by slurry sampling total reflection X-ray fluorescence spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Amberger, Martin A.; Hoeltig, Michael [University of Hamburg, Institute for Inorganic and Applied Chemistry, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany); Broekaert, Jose A.C., E-mail: jose.broekaert@chemie.uni-hamburg.d [University of Hamburg, Institute for Inorganic and Applied Chemistry, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)

    2010-02-15

    The use of slurry sampling total reflection X-ray fluorescence spectrometry (SlS-TXRF) for the direct determination of Ca, Cr, Cu, Fe, Mn and Ti in four boron nitride powders has been described. Measurements of the zeta potential showed that slurries with good stabilities can be obtained by the addition of polyethylenimine (PEI) at a concentration of 0.1 wt.% and by adjusting the pH at 4. For the optimization of the concentration of boron nitride in the slurries the net line intensities and the signal to background ratios were determined for the trace elements Ca and Ti as well as for the internal standard element Ga in the case of concentrations of boron nitride ranging from 1 to 30 mg mL{sup -1}. As a compromise with respect to high net line intensities and high signal to background ratios, concentrations of 5 mg mL{sup -1} of boron nitride were found suitable and were used for all further measurements. The limits of detection of SlS-TXRF for the boron nitride powders were found to range from 0.062 to 1.6 mug g{sup -1} for Cu and Ca, respectively. Herewith, they are higher than those obtained in solid sampling and slurry sampling graphite furnace atomic absorption spectrometry (SoS-GFAAS, SlS-GFAAS) as well as those of solid sampling electrothermal evaporation inductively coupled plasma optical emission spectrometry (SoS-ETV-ICP-OES). For Ca and Fe as well as for Cu and Fe, however, they were found to be lower than for GFAAS and for ICP-OES subsequent to wet chemical digestion, respectively. The universal applicability of SlS-TXRF to the analysis of samples with a wide variety of matrices could be demonstrated by the analysis of certified reference materials such as SiC, Al{sub 2}O{sub 3}, powdered bovine liver and borate ore with a single calibration. The correlation coefficients of the plots for the values found for Ca, Fe and Ti by SlS-TXRF in the boron nitride powders as well as in the before mentioned samples versus the reference values for the respective

  5. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Science.gov (United States)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  6. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu, E-mail: lfchen@xmu.edu.cn

    2016-09-30

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiC{sub f}/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  7. The study of new anticancer drug delivery system based on the boron nitride nanoparticles

    Directory of Open Access Journals (Sweden)

    I. Yu. Zhitnyak

    2016-01-01

    Full Text Available The main problem in the treatment of many cancers is multidrug resistance due to tumor progression. Using nanosized drug delivery systems allows to overcome the mechanisms of multidrug resistance of cancer, in this case, chemotherapeutic agents can effectively introduce into cancer cells by endocytosis and accumulate near the nucleus and far from ATP-binding cassette transporters. Creation of boron nitridebased drug delivery nanocarriers with high chemical and oxidative stability is one of the perspective ways. Using chemical vapor deposition spherical boron nitride particles,100–150 nm in diameter (BNNPs, with peculiar petal-like surfaces or smooth surfaces were fabricated. BNNPs were loaded with doxorubicin. Drug loading efficacy of BNNPs-DOX was about 0.095 mg/mg of particles. BNNPs-DOX were relatively stable at neutral pH, whereas DOX is effectively released from the BNNPs at acidic pH (pH 4.5–5.5. Using confocal microscopy, the uptake of BNNPs-DOX by IAR-6-1, KB-3-1, К562 cells and multidrug resistant КВ-8-5 и IS-9 cells was studied. Most of BNNPs-DOX had been co-localized with LysoTracker, indicating that BNNPs-DOX are located in the endosomes/lysosomes after intracellular delivery.

  8. Doping Reaction of some Nanotubes with Aluminium Atom: A Thermodynamic PM6 and ONIOM Investigation

    Directory of Open Access Journals (Sweden)

    Nasrin Zeighami

    2017-02-01

    Full Text Available The doping reaction of boron nitride and carbon nanotubes with aluminium atom was theoretically investigated. ONIOM method and PM6 method have been used to evaluate the thermochemistry of doping reactions of single walled boron nitride nanotubes and carbon nanotubes. The enthalpy changes, Gibbs free energy changes, of studied doping reactions were evaluated at different temperatures. All nanotubes were single-walled and finite length with hydrogen saturation in the terminal atoms. The thermodynamic calculations based on the ONIOM and PM6 levels results showed (8,0CNT is the best candidate for Al-doping reaction.result suggest the aluminum doped boron nitride nanotubes and carbon nanotubes may be considered the proper carries for the drug delivery.

  9. Ab initio self-consistent calculations of the Compton profiles and polarizabilities of diamond and cubic boron nitride

    CERN Document Server

    Ayma, D; Lichanot, A

    1998-01-01

    Compton profiles, polarizabilities and related functions of diamond and cubic boron nitride have been investigated within the Hartree-Fock approximation and the density functional theory, calculated within the local density approximation and generalized gradient approximation, but without any explicit correlation correction for the Compton profiles. The correlation part already included in the standard uncorrected density functional theory is deduced from the comparison of the two types of calculation. The Compton profile and reciprocal-form-factor anisotropies, polarizability, dielectric constant and energy loss function of the two compounds are compared at the same level of accuracy. These properties are very close in spite of the rather different chemical bonds due to the charge transfer occurring in cubic boron nitride and gaps. (author)

  10. Negative Refraction with Superior Transmission in Graphene-Hexagonal Boron Nitride (hBN) Multilayer Hyper Crystal

    OpenAIRE

    Ayed Al Sayem; Md. Masudur Rahman; Mahdy, M. R. C.; Ifat Jahangir; Md. Saifur Rahman

    2016-01-01

    In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal) to demonstrate all angle negative refraction along with superior transmission. hBN, one of the latest natural hyperbolic materials, can be a very strong contender to form a hyper crystal with graphene due to its excellence as a graphene-compatible substrate. Although bare hBN can exhibit negative refraction, the transmission is generally low due to...

  11. Development of a cavity ring-down spectroscopy sensor for boron nitride sputter erosion in Hall thrusters

    CERN Document Server

    Tao, Lei; Gallimore, Alec D; Yalin, Azer P

    2010-01-01

    Sputter erosion of boron nitride (BN) is a critically important process in Hall thrusters from the point of view of both lifetime assessment and contamination effects. This contribution describes the development of a laser based sensor for in situ monitoring of sputtered BN from Hall thrusters. We present a continuous-wave cavity ring-down spectroscopy (cw-CRDS) system and its demonstrative measurement results from BN sputtering experiments.

  12. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    DEFF Research Database (Denmark)

    Meijs, Suzan; Alcaide, Maria; Sørensen, Charlotte;

    2016-01-01

    OBJECTIVE: The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. APPROACH: Electrochemical impedance spectroscopy, cyclic voltammetry and ...... electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes....

  13. Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, I.; Jankowski, A.F.; Terminello, L.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-center bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.

  14. Implementation of Outstanding Electronic Transport in Polar Covalent Boron Nitride Atomic Chains: another Extraordinary Odd-Even Behaviour.

    Science.gov (United States)

    Xu, Xiaodong; Li, Weiqi; Liu, Linhua; Feng, Jikang; Jiang, Yongyuan; Tian, Wei Quan

    2016-05-23

    A theoretical investigation of the unique electronic transport properties of the junctions composed of boron nitride atomic chains bridging symmetric graphene electrodes with point-contacts is executed through non-equilibrium Green's function technique in combination with density functional theory. Compared with carbon atomic chains, the boron nitride atomic chains have an alternative arrangement of polar covalent B-N bonds and different contacts coupling electrodes, showing some unusual properties in functional atomic electronic devices. Remarkably, they have an extraordinary odd-even behavior of conductivity with the length increase. The rectification character and negative differential resistance of nonlinear current-voltage characteristics can be achieved by manipulating the type of contacts between boron nitride atomic chains bridges and electrodes. The junctions with asymmetric contacts have an intrinsic rectification, caused by stronger coupling in the C-N contact than the C-B contact. On the other hand, for symmetric contact junctions, it is confirmed that the transport properties of the junctions primarily depend on the nature of contacts. The junctions with symmetric C-N contacts have higher conductivity than their C-B contacts counterparts. Furthermore, the negative differential resistances of the junctions with only C-N contacts is very conspicuous and can be achieved at lower bias.

  15. Thermodynamic Studies of Decane on Boron Nitride and Graphite Substrates Using Synchrotron Radiation and Molecular Dynamics Simulations

    Science.gov (United States)

    Strange, Nicholas; Arnold, Thomas; Forster, Matthew; Parker, Julia; Larese, J. Z.; Diamond Light Source Collaboration; University of Tennessee Team

    2014-03-01

    Hexagonal boron nitride (hBN) has a lattice structure similar to that of graphite with a slightly larger lattice parameter in the basal plane. This, among other properties, makes it an excellent substrate in place of graphite, eliciting some important differences. This work is part of a larger effort to examine the interaction of alkanes with magnesium oxide, graphite, and boron nitride surfaces. In our current presentation, we will discuss the interaction of decane with these surfaces. Decane exhibits a fully commensurate structure on graphite and hBN at monolayer coverages. In this particular experiment, we have examined the monolayer structure of decane adsorbed on the basal plane of hBN using synchrotron x-ray radiation at Diamond Light Source. Additionally, we have examined the system experimentally with volumetric isotherms as well as computationally using molecular dynamics simulations. The volumetric isotherms allow us to calculate properties which provide important information about the adsorbate's interaction with not only neighboring molecules, but also the interaction with the adsorbent boron nitride.

  16. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  17. Effects of boron doping in TiO2 nanotubes and the performance of dye-sensitized solar cells

    Science.gov (United States)

    Subramanian, Alagesan; Wang, Hong-Wen

    2012-06-01

    Titanium nanotubes doped with boron used as the photoelectrode for dye-sensitized solar cells were investigated. The materials were characterized by SEM, XRD, and UV-vis spectroscopy and their photoconversion efficiencies were evaluated. The chemical compositions of TiO2 nanotubes (TNA) and boron doped TNA (B-TNA) were identified by the energy dispersive X-ray spectroscopy (EDS). XRD evidenced the presence of anatase as the main phase and presented the existence of boron elements at interstitial sites between the TiO2 lattices. The UV-vis spectra indicated the narrowing of band gap upon doping boron into titanium nanotubes. The photovoltaic properties were measured by a current-voltage meter under AM1.5 simulated light radiation. The boron-doped TiO2 nanotube arrays showed an enhanced performance with a photocurrent density of 7.85 ± 0.20 mA/cm2 and an overall conversion efficiency (η) of 3.44 ± 0.10%. The enhanced performance was attributed to the enhanced electron injection rate and retardation of the charge recombination, which could be due to perfect matching between the LUMO of dye molecules and the conduction band of TiO2. Electrochemical impedance spectroscopy (EIS) measurement indicated the longer electron lifetime and reduced TiO2/dye/electrolyte interface resistance for boron doped TiO2 nanotubes than that of undoped TiO2 nanotubes.

  18. Size effects on the infrared responses of boron carbide nanotubes

    Science.gov (United States)

    ElBiyaali, A.; Bentaleb, M.; Chadli, H.; Boutahir, M.; Rahmani, A. H.; Fakrach, B.; Hermet, P.; Rahmani, A.

    2016-10-01

    The spectral moment's method combined with a force constant model is used to calculate the polarized infrared spectra in single-walled BC3 nanotubes. We discuss the evolution of these spectra as a function of the diameter, chirality and length of nanotubes. Our work provides benchmark theoretical data for the assignment of experimental infrared spectra.

  19. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  20. Dielectric Properties of Boron Nitride-Ethylene Glycol (BN-EG) Nanofluids

    Science.gov (United States)

    Fal, Jacek; Cholewa, Marian; Gizowska, Magdalena; Witek, Adam; ŻyŁa, GaweŁ

    2017-02-01

    This paper presents the results of experimental investigation of the dielectric properties of ethylene glycol (EG) with various load of boron nitride (BN) nanoparticles. The nanofuids were prepared by using a two-step method on the basis of commercially available BN nanoparticles. The measurements were carried out using the Concept 80 System (NOVOCONTROL Technologies GmbH & Co. KG, Montabaur, Germany) in a frequency range from 10 Hz to 10 MHz and temperatures from 278.15 K to 328.15 K. The frequency-dependent real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the complex permittivity (ɛ ^*) and the alternating current (AC) conductivity are presented. Also, the effect of temperature and mass concentrations on the dielectric properties of BN-EG nanofluids are demonstrated. The results show that the most significant increase can be achieved for 20 wt.% of BN nanoparticles at 283.15 K and 288.15 K, that is eleven times larger than in the case of pure EG.

  1. Solid-state neutron detectors based on thickness scalable hexagonal boron nitride

    CERN Document Server

    Ahmed, Kawser; Weltz, Adam; Lu, James J -Q; Danon, Yaron; Bhat, Ishwara B

    2016-01-01

    This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM) configuration detectors. These detectors showed intrinsic thermal neutron detection efficiency values of 0.86%, 2.4%, 3.15%, and 4.71% for natural hBN thickness values of 2.5, 7.5, 10, and 15 microns, respectively. Measured efficiencies are very close (more than 92%) to the theoretical maximum efficiencies for corresponding hBN thickness values for these detectors. This clearly shows the hBN thickness scalability of these detectors. A 15-micron thick hBN based MSM detector is expected to yield an efficiency of 21.4%, if enriched hBN (with ~100% B-10) is used instead of natural hBN. These results demonstrate that the...

  2. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

    Institute of Scientific and Technical Information of China (English)

    FAN Ya-Ming; ZHANG Xing-Wang; YOU Jing-Bi; YING Jie; TAN Hai-Ren; CHEN Nuo-Fu

    2009-01-01

    Cubic boron nitride (c-BN) films were deposited on Si(O01) substrates in an ion beam assisted deposition (IBAD)system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc = 50% to 2.1 at χc = 90%.Furthermore, the relationship between n and p for BN films can be described by the Anderzon-Schreiber equation,and the overlap field parameter γ is determined to be 2.05.

  3. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets

    Science.gov (United States)

    Liao, Yunlong; Cao, Wei; Connell, John W.; Chen, Zhongfang; Lin, Yi

    2016-05-01

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm2) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images.

  4. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    Science.gov (United States)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  5. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    Science.gov (United States)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  6. Europium (III) Organic Complexes in Porous Boron Nitride Microfibers: Efficient Hybrid Luminescent Material

    Science.gov (United States)

    Lin, Jing; Feng, Congcong; He, Xin; Wang, Weijia; Fang, Yi; Liu, Zhenya; Li, Jie; Tang, Chengchun; Huang, Yang

    2016-01-01

    We report the design and synthesis of a novel kind of organic-inorganic hybrid material via the incorporation of europium (III) β-diketonate complexes (Eu(TTA)3, TTA = 2-thenoyltrifluoroacetone) into one-dimensional (1D) porous boron nitride (BN) microfibers. The developed Eu(TTA)3@BN hybrid composites with typical 1D fibrous morphology exhibit bright visible red-light emission on UV illumination. The confinement of Eu(TTA)3 within pores of BN microfibers not only decreases the aggregation-caused quenching in solid Eu(TTA)3, but also improves their thermal stabilities. Moreover, The strong interactions between Eu(TTA)3 and porous BN matrix result in an interesting energy transfer process from BN host to TTA ligand and TTA ligand to Eu3+ ions, leading to the remarkable increase of red emission. The synthetic approach should be a very promising strategy which can be easily expanded to other hybrid luminescent materials based on porous BN. PMID:27687246

  7. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  8. Wear behavior of sintered hexagonal boron nitride under atmosphere and water vapor ambiences

    Science.gov (United States)

    Cao, Yuxia; Du, Lingzhong; Huang, Chuanbing; Liu, Wei; Zhang, Weigang

    2011-09-01

    Hexagonal boron nitride was pressed and sintered at 2000 °C with CaB2O4 as an additive to promote its crystallization, which was used as an abradable sealing coating for aircraft turbo engines. Microstructures, phase compositions and tribological properties of the sintered hBN were tested, and the results show that CaB2O4 can effectively promote crystal growth of hBN at 2000 °C for 5 h in N2 ambience. The friction coefficients of the sintered hBN under atmosphere ambience increase as the temperature increasing from room temperature to 400 °C, and then decrease with further increasing of temperature up to 800 °C. Under water vapor ambience, friction coefficients of the sintered hBN are much lower than those under atmosphere ambience, which are attributed to a lamella-slip of hBN and the solid lubrication effect of H3BO3.

  9. Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

    Science.gov (United States)

    Kim, Ki Kang; Hsu, Allen; Jia, Xiaoting; Kim, Soo Min; Shi, Yumeng; Hofmann, Mario; Nezich, Daniel; Rodriguez-Nieva, Joaquin F; Dresselhaus, Mildred; Palacios, Tomas; Kong, Jing

    2012-01-11

    Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.

  10. Boron nitride nanosheets as improved and reusable substrates for gold nanoparticles enabled surface enhanced Raman spectroscopy

    KAUST Repository

    Cai, Qiran

    2015-01-01

    Atomically thin boron nitride (BN) nanosheets have been found to be excellent substrates for noble metal particles enabled surface enhanced Raman spectroscopy (SERS), thanks to their good adsorption of aromatic molecules, high thermal stability and weak Raman scattering. Faceted gold (Au) nanoparticles have been synthesized on BN nanosheets using a simple but controllable and reproducible sputtering and annealing method. The size and density of the Au particles can be controlled by sputtering time, current and annealing temperature etc. Under the same sputtering and annealing conditions, the Au particles on BN of different thicknesses show various sizes because the surface diffusion coefficients of Au depend on the thickness of BN. Intriguingly, decorated with similar morphology and distribution of Au particles, BN nanosheets exhibit better Raman enhancements than silicon substrates as well as bulk BN crystals. Additionally, BN nanosheets show no noticeable SERS signal and hence cause no interference to the Raman signal of the analyte. The Au/BN substrates can be reused by heating in air to remove the adsorbed analyte without loss of SERS enhancement. This journal is © the Owner Societies 2015.

  11. Hybrid boron nitride-natural fiber composites for enhanced thermal conductivity

    Science.gov (United States)

    Xia, Changlei; Garcia, Andres C.; Shi, Sheldon Q.; Qiu, Ying; Warner, Nathaniel; Wu, Yingji; Cai, Liping; Rizvi, Hussain R.; D’Souza, Nandika A.; Nie, Xu

    2016-10-01

    Thermal conductivity was dramatically increased after adding natural fiber into hexagonal boron nitride (hBN)/epoxy composites. Although natural fiber does not show high-thermal conductivity itself, this study found that the synergy of natural fiber with hBN could significantly improve thermal conductivity, compared with that solely using hBN. A design of mixtures approach using constant fibers with increasing volume fractions of hBN was examined and compared. The thermal conductivity of the composite containing 43.6% hBN, 26.3% kenaf fiber and 30.1% epoxy reached 6.418 W m‑1 K‑1, which was 72.3% higher than that (3.600 W m‑1 K‑1) of the 69.0% hBN and 31.0% epoxy composite. Using the scanning electron microscope (SEM) and micro computed tomography (micro-CT), it was observed that the hBN powders were well distributed and ordered on the fiber surfaces enhancing the ceramic filler’s interconnection, which may be the reason for the increase in thermal conductivity. Additionally, the results from mechanical and dynamic mechanical tests showed that performances dramatically improved after adding kenaf fibers into the hBN/epoxy composite, potentially benefiting the composite’s use as an engineered material.

  12. Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface

    Science.gov (United States)

    Makarova, Marina V.; Okawa, Yuji; Verveniotis, Elisseos; Watanabe, Kenji; Taniguchi, Takashi; Joachim, Christian; Aono, Masakazu

    2016-09-01

    The electrical characterization of single-polymer chains on a surface is an important step towards novel molecular device development. The main challenge is the lack of appropriate atomically flat insulating substrates for fabricating single-polymer chains. Here, using atomic force microscopy, we demonstrate that the (0001) surface of an insulating hexagonal boron nitride (h-BN) substrate leads to a flat-lying self-assembled monolayer of diacetylene compounds. The subsequent heating or ultraviolet irradiation can initiate an on-surface polymerization process leading to the formation of long polydiacetylene chains. The frequency of photo-polymerization occurrence on h-BN(0001) is two orders of magnitude higher than that on graphite(0001). This is explained by the enhanced lifetime of the molecular excited state, because relaxation via the h-BN is suppressed due to a large band gap. We also demonstrate that on-surface polymerization on h-BN(0001) is possible even after the lithography process, which opens up the possibility of further electrical investigations.

  13. Preparation and properties of hexagonal boron nitride fibers used as high temperature membrane filter

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xinmei, E-mail: houxinmei@ustb.edu.cn; Yu, Ziyou; Li, Yang; Chou, Kuo-Chih

    2014-01-01

    Graphical abstract: - Highlights: • h-BN fibers were successfully fabricated using H{sub 3}BO{sub 3} and C{sub 3}H{sub 6}N{sub 6} as raw materials. • The obtained BN fibers were polycrystalline and uniform in morphology. • It exhibited good oxidation resistance and low thermal expansion coefficient. - Abstract: Hexagonal boron nitride fibers were synthesized via polymeric precursor method using boric acid (H{sub 3}BO{sub 3}) and melamine (C{sub 3}H{sub 6}N{sub 6}) as raw materials. The precursor fibers were synthesized by water bath and BN fibers were prepared from the precursor at 1873 K for 3 h in flowing nitrogen atmosphere. The crystalline phase and microstructures of BN fibers were examined by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy. The results showed that h-BN fibers with uniform morphology were successfully fabricated. The well-synthesized BN fibers were polycrystalline with 0.4–1.5 μm in diameter and 200–500 μm in length. The as-prepared samples exhibited good oxidation resistance and low thermal expansion coefficient at high temperature.

  14. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  15. One-Step Synthesis of Boron Nitride Quantum Dots: Simple Chemistry Meets Delicate Nanotechnology.

    Science.gov (United States)

    Liu, Bingping; Yan, Shihai; Song, Zhongqian; Liu, Mengli; Ji, Xuqiang; Yang, Wenrong; Liu, Jingquan

    2016-12-23

    Herein, a conceptually new and straightforward aqueous route is described for the synthesis of hydroxyl- and amino-functionalized boron nitride quantum dots (BNQDs) with quantum yields (QY) as high as 18.3 % by using a facile bottom-up approach, in which a mixture of boric acid and ammonia solution was hydrothermally treated in one pot at 200 °C for 12 h. The functionalized BNQDs, with excellent photoluminescence properties, could be easily dispersed in an aqueous medium and applied as fluorescent probes for the detection of ferrous (Fe(2+) ) and ferric (Fe(3+) ) ions with excellent selectivity and low detection limits. The mechanisms for the hydrothermal reaction and fluorescence quenching were also simulated by using density functional theory (DFT), which confirmed the feasibility and advantages of this strategy. It provides a scalable and eco-friendly method for preparation of BNQDs with good dispersability and could also be generalized to the synthesis of other 2D quantum dots and nanoplates.

  16. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

    Science.gov (United States)

    Mishchenko, A; Tu, J S; Cao, Y; Gorbachev, R V; Wallbank, J R; Greenaway, M T; Morozov, V E; Morozov, S V; Zhu, M J; Wong, S L; Withers, F; Woods, C R; Kim, Y-J; Watanabe, K; Taniguchi, T; Vdovin, E E; Makarovsky, O; Fromhold, T M; Fal'ko, V I; Geim, A K; Eaves, L; Novoselov, K S

    2014-10-01

    Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

  17. Europium (III) Organic Complexes in Porous Boron Nitride Microfibers: Efficient Hybrid Luminescent Material

    Science.gov (United States)

    Lin, Jing; Feng, Congcong; He, Xin; Wang, Weijia; Fang, Yi; Liu, Zhenya; Li, Jie; Tang, Chengchun; Huang, Yang

    2016-09-01

    We report the design and synthesis of a novel kind of organic-inorganic hybrid material via the incorporation of europium (III) β-diketonate complexes (Eu(TTA)3, TTA = 2-thenoyltrifluoroacetone) into one-dimensional (1D) porous boron nitride (BN) microfibers. The developed Eu(TTA)3@BN hybrid composites with typical 1D fibrous morphology exhibit bright visible red-light emission on UV illumination. The confinement of Eu(TTA)3 within pores of BN microfibers not only decreases the aggregation-caused quenching in solid Eu(TTA)3, but also improves their thermal stabilities. Moreover, The strong interactions between Eu(TTA)3 and porous BN matrix result in an interesting energy transfer process from BN host to TTA ligand and TTA ligand to Eu3+ ions, leading to the remarkable increase of red emission. The synthetic approach should be a very promising strategy which can be easily expanded to other hybrid luminescent materials based on porous BN.

  18. Fluorosulfates of graphite and boron nitride and other high oxidation state studies

    Energy Technology Data Exchange (ETDEWEB)

    Biagioni, R.N.

    1980-10-01

    The adduct XeF/sub 2/.AsF/sub 5/ was re-examined and assessed to be intermediate between the salt formulation (FXe)/sup +/AsF/sub 6//sup -/ and the fluorine bridged molecular adduct. A series of graphite fluorosulfates were prepared, using as the oxidizing agent S/sub 2/O/sub 6/F/sub 2/, and the effects of incorporating varying amounts of fluorosulfonic acid were studied. Physical data indicated that the S/sub 2/O/sub 6/F/sub 2/ was incorported as SO/sub 3/F/sup -/, and the HSO/sub 3/F was bound tightly, probably due to hydrogen bonding. The c-spacings of HSO/sub 3/F containing materials were larger than those of acid free materials, and the influences of charging, guest size and guest orientation were examined. X-ray diffractometer studies of graphite slabs intercalated with SO/sub 3/F/HSO/sub 3/F and IrF/sub 6/ indicated structures consistent with the characterization of these materials as containing tetrahedral SO/sub 3/F and octahedral IrF/sub 6/. Boron nitride reacted with S/sub 2/O/sub 6/F/sub 2/ to yield a deep blue, conducting intercalation compound. This material was in many respects similar to its graphite analog, but chemically more labile.

  19. Comparative study of the interfaces of graphene and hexagonal boron nitride with silver

    Science.gov (United States)

    Garnica, Manuela; Schwarz, Martin; Ducke, Jacob; He, Yuanqin; Bischoff, Felix; Barth, Johannes V.; Auwärter, Willi; Stradi, Daniele

    2016-10-01

    Silver opens up interesting perspectives in the fabrication of complex systems based on heteroepitaxial layers after the growth of a silicene layer on its (111) face has been proposed. In this work we explore different synthesis methods of hexagonal boron nitride (h -BN) and graphene sheets on silver. The resulting layers have been examined by high-resolution scanning tunneling microscopy. A comparison of the interfacial electronic band structure upon growth of the distinct two-dimensional (2D) layers has been performed by scanning tunneling spectroscopy and complementary first-principle calculations. We demonstrate that the adsorption of the 2D layers has an effect on the binding energy of the Shockley state and the surface potential by lowering the local work function. These effects are larger in the case of graphene where the surface state of Ag(111) is depopulated due to charge transfer to the graphene. Furthermore, we show that the electronic properties of the h -BN/silver system can be tuned by employing different thicknesses of silver ranging from a few monolayers on Cu(111) to the single crystal Ag substrate.

  20. Coherent phonon transport in short-period two-dimensional superlattices of graphene and boron nitride

    Science.gov (United States)

    da Silva, Carlos; Saiz, Fernan; Romero, David A.; Amon, Cristina H.

    2016-03-01

    Promoting coherent transport of phonons at material interfaces is a promising strategy for controlling thermal transport in nanostructures and an alternative to traditional methods based on structural defects. Coherent transport is particularly relevant in short-period heterostructures with smooth interfaces and long-wavelength heat-carrying phonons, such as two-dimensional superlattices of graphene and boron nitride. In this work, we predict phonon properties and thermal conductivities in these superlattices using a normal mode decomposition approach. We study the variation of the frequency dependence of these properties with the periodicity and interface configuration (zigzag and armchair) for superlattices with period lengths within the coherent regime. Our results showed that the thermal conductivity decreases significantly from the first period length (0.44 nm) to the second period length (0.87 nm), 13% across the interfaces and 16% along the interfaces. For greater periods, the conductivity across the interfaces continues decreasing at a smaller rate of 11 W/mK per period length increase (0.43 nm), driven by changes in the phonon group velocities (coherent effects). In contrast, the conductivity along the interfaces slightly recovers at a rate of 2 W/mK per period, driven by changes in the phonon relaxation times (diffusive effects). By changing the interface configuration from armchair to zigzag, the conductivities for all period lengths increase by approximately 7% across the interfaces and 19% along the interfaces.

  1. The magnetism and spin-dependent electronic transport properties of boron nitride atomic chains.

    Science.gov (United States)

    An, Yipeng; Zhang, Mengjun; Wu, Dapeng; Fu, Zhaoming; Wang, Tianxing; Jiao, Zhaoyong; Wang, Kun

    2016-07-28

    Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 μB for BnNn-1, 2 μB for BnNn, and 3 μB for BnNn+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short BnNn+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long BnNn+1 chains under high bias voltages and other types of BN atomic chains (BnNn-1 and BnNn). The proposed short BnNn+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied.

  2. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

    Science.gov (United States)

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S; Korolkov, Vladimir V; Cho, YongJin; Mellor, Christopher J; Foxon, C Thomas; Khlobystov, Andrei N; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V; Beton, Peter H

    2016-03-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.

  3. Suppressing bacterial interaction with copper surfaces through graphene and hexagonal-boron nitride coatings.

    Science.gov (United States)

    Parra, Carolina; Montero-Silva, Francisco; Henríquez, Ricardo; Flores, Marcos; Garín, Carolina; Ramírez, Cristian; Moreno, Macarena; Correa, Jonathan; Seeger, Michael; Häberle, Patricio

    2015-04-01

    Understanding biological interaction with graphene and hexagonal-boron nitride (h-BN) membranes has become essential for the incorporation of these unique materials in contact with living organisms. Previous reports show contradictions regarding the bacterial interaction with graphene sheets on metals. Here, we present a comprehensive study of the interaction of bacteria with copper substrates coated with single-layer graphene and h-BN. Our results demonstrate that such graphitic coatings substantially suppress interaction between bacteria and underlying Cu substrates, acting as an effective barrier to prevent physical contact. Bacteria do not "feel" the strong antibacterial effect of Cu, and the substrate does not suffer biocorrosion due to bacteria contact. Effectiveness of these systems as barriers can be understood in terms of graphene and h-BN impermeability to transfer Cu(2+) ions, even when graphene and h-BN domain boundary defects are present. Our results seem to indicate that as-grown graphene and h-BN films could successfully protect metals, preventing their corrosion in biological and medical applications.

  4. Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

    Science.gov (United States)

    Ahmed, K.; Dahal, R.; Weltz, A.; Lu, J.-Q.; Danon, Y.; Bhat, I. B.

    2016-09-01

    Hexagonal boron nitride (hBN) growth was carried out on (111) Si substrates at a temperature of 1350 °C using a cold wall chemical vapor deposition system. The hBN phase of the deposited films was identified by the characteristic Raman peak at 1370 cm-1 with a full width at half maximum of 25 cm-1, corresponding to the in-plane stretch of B and N atoms. Chemical bonding states and composition of the hBN films were analyzed by X-ray photoelectron spectroscopy; the extracted B/N ratio was 1.03:1, which is 1:1 within the experimental error. The fabricated metal-hBN-metal devices demonstrate a strong deep UV (DUV) response. Further, the hBN growth on the vertical (111) surfaces of parallel trenches fabricated in (110) Si was explored to achieve a thermal neutron detector. These results demonstrate that hBN-based detectors represent a promising approach towards the development of DUV photodetectors and efficient solid-state thermal neutron detectors.

  5. Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

    Institute of Scientific and Technical Information of China (English)

    Shuang Wang; Gang Jia; Xiuhuan Liu; Shipeng Chi; Jingcheng Zhu; Yanjun Gao; Pingwei Zhou; Zhanguo Chen

    2012-01-01

    The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature.The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained.This method does not need to measure the absolute light intensity.All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes.The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing {112} planes of the tiny octahedral cBN flakes.Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations,and the measured results are very close,about 3.68 and 3.95 pm/V,respectively,which are larger than the linear EO coefficients of the general Ⅲ-Ⅴ compounds.

  6. Huge nanodielectric effects in polyimide/boron nitride nanocomposites revealed by the nanofiller size

    Science.gov (United States)

    Diaham, S.; Saysouk, F.; Locatelli, M.-L.; Lebey, T.

    2015-09-01

    The dielectric properties of polyimide/boron nitride (PI/BN) nanocomposite films are investigated as a function of the BN nanofiller size from 20 to 350 °C and at low filler content (1-2 vol.%). The role of the BN nanofiller size on the large reduction of the electrode polarization relaxation phenomenon due to ionic movements is reported. For the two smallest BN nanoparticles (95 nm and 35 nm), the permittivity, dielectric losses and dc conductivity are strongly attenuated above 200 °C by a factor of 10 to 1000 compared to neat PI. Thus, the dc conductivity at 350 °C is reduced from 4   ×   10-8 Ω-1 cm-1 for neat PI to 3   ×   10-11 Ω-1 cm-1 for PI/BN (35 nm). Moreover, a further decrease is obtained by functionalizing the nanofiller surface with a silane coupling agent which improves the grafting of PI chains on those latter nanoparticles. These results highlight the trapping efficiency in the interphase region introduced by the small BN nanofillers (<100 nm) and provides evidence as to the huge nanodielectric effects on the charge carrier transport controlled by the nanoparticle diameter. This finding should be of great importance for advanced high temperature electrical insulation in the future.

  7. Huge thermal conductivity enhancement in boron nitride – ethylene glycol nanofluids

    Energy Technology Data Exchange (ETDEWEB)

    Żyła, Gaweł, E-mail: gzyla@prz.edu.pl [Department of Physics and Medical Engineering, Rzeszow University of Technology, Rzeszow, 35-905 (Poland); Fal, Jacek; Traciak, Julian [Department of Physics and Medical Engineering, Rzeszow University of Technology, Rzeszow, 35-905 (Poland); Gizowska, Magdalena; Perkowski, Krzysztof [Department of Nanotechnology, Institute of Ceramics and Building Materials, Warsaw, 02-676 (Poland)

    2016-09-01

    Paper presents the results of experimental studies on thermophysical properties of boron nitride (BN) plate-like shaped particles in ethylene glycol (EG). Essentially, the studies were focused on the thermal conductivity of suspensions of these particles. Nanofluids were obtained with two-step method (by dispersing BN particles in ethylene glycol) and its’ thermal conductivity was analyzed at various mass concentrations, up to 20 wt. %. Thermal conductivity was measured in temperature range from 293.15 K to 338.15 K with 15 K step. The measurements of thermal conductivity of nanofluids were performed in the system based on a device using the transient line heat source method. Studies have shown that nanofluids’ thermal conductivity increases with increasing fraction of nanoparticles. The results of studies also presented that the thermal conductivity of nanofluids changes very slightly with the increase of temperature. - Highlights: • Huge thermal conductivity enhancement in BN-EG nanofluid was reported. • Thermal conductivity increase very slightly with increasing of the temperature. • Thermal conductivity increase linearly with volume concentration of particles.

  8. Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes

    Science.gov (United States)

    Li, Xin; Hua, Weijie; Wang, Bo-Yao; Pong, Way-Faung; Glans, Per-Anders; Guo, Jinghua; Luo, Yi

    2016-08-01

    Doping is an efficient way to open the zero band gap of graphene. The control of the dopant domain size allows us to tailor the electronic structure and the properties of the graphene. We have studied the electronic structure of boron nitride doped graphenes with different domain sizes by simulating their near-edge X-ray absorption fine structure (NEXAFS) spectra at the N K-edge. Six different doping configurations (five quantum dot type and one phase-separated zigzag-edged type) were chosen, and N K-edge NEXAFS spectra were calculated with large truncated cluster models by using the density functional theory with hybrid functional and the equivalent core hole approximation. The opening of the band gap as a function of the domain size is revealed. We found that nitrogens in the dopant boundary contribute a weaker, red-shifted π* peak in the spectra as compared to those in the dopant domain center. The shift is related to the fact that these interfacial nitrogens dominate the lowest conduction band of the system. Upon increasing the domain size, the ratio of interfacial atom decreases, which leads to a blue shift of the π* peak in the total NEXAFS spectra. The spectral evolution agrees well with experiments measured at different BN-dopant concentrations and approaches to that of a pristine h-BN sheet.

  9. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  10. Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li Junsheng, E-mail: charlesljs@163.com [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China); Zhang Changrui; Li Bin [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China)

    2011-06-15

    Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 deg. C-1000 deg. C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 deg. C, the deposition rate reached a maximum (2.5 {mu}m/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 deg. C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 deg. C, while hexagonal BN coatings were deposited above 1100 deg. C. A penetration of carbon element from the fibers to the coatings was observed.

  11. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Science.gov (United States)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  12. In Vivo Biodistribution and Toxicity of Highly Soluble PEG-Coated Boron Nitride in Mice

    Science.gov (United States)

    Liu, Bo; Qi, Wei; Tian, Longlong; Li, Zhan; Miao, Guoying; An, Wenzhen; Liu, Dan; Lin, Jing; Zhang, Xiaoyong; Wu, Wangsuo

    2015-12-01

    The boron nitride (BN) nanoparticles, as the structural analogues of graphene, are the potential biomedicine materials because of the excellent biocompatibility, but their solubility and biosafety are the biggest obstacle for the clinic application. Here, we first synthesized the highly soluble BN nanoparticles coated by PEG (BN-PEG) with smaller size (~10 nm), then studied their biodistribution in vivo through radioisotope (Tc99mO4 -) labeling, and the results showed that BN-PEG nanoparticles mainly accumulated in the liver, lung, and spleen with the less uptake by the brain. Moreover, the pathological changes induced by BN-PEG could be significantly observed in the sections of the liver, lung, spleen, and heart, which can be also supported by the test of biochemical indexes in serum. More importantly, we first observed the biodistribution of BN-PEG in the heart tissues with high toxicity, which would give a warning about the cardiovascular disease, and provide some opportunities for the drug delivery and treatment.

  13. Thermal transport across few-layer boron nitride encased by silica

    Energy Technology Data Exchange (ETDEWEB)

    Ni, Yuxiang; Dumitricǎ, Traian, E-mail: dtraian@umn.edu [Department of Mechanical Engineering, University of Minnesota, 111 Church Street SE, Minneapolis, Minnesota 55455 (United States); Jiang, Jiechao; Meletis, Efstathios [Department of Materials Science and Engineering, University of Texas at Arlington, 501 West First St., Arlington, Texas 76019 (United States)

    2015-07-20

    Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO{sub 2}). We report large interfacial thermal resistances, of about 2.2 × 10{sup −8} m{sup 2} K W{sup −1}, which are not sensitive to the number of h-BN layers or the SiO{sub 2} crystallinity. The h-BN/SiO{sub 2} superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications.

  14. Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Zhang Xiao-Kang; Yao Qian; Wang Xu-Yang; Chen Guang-Hua; He De-Yan

    2009-01-01

    The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra,h-BN thin films with a wide optical band gap Eg (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

  15. In situ infrared spectroscopic study of cubic boron nitride thin film delamination

    Institute of Scientific and Technical Information of China (English)

    Yang Hang-Sheng; Zhang Jian-Ying; Nie An-Min; Zhang Xiao-Bin

    2008-01-01

    This paper investigates the procedure of cubic boron nitride(cBN)thin film delamination by Fourier-transform infrared(IR)spectroscopy.It finds that the apparent IR absorption peak area near 1380 cm-1 and 1073 cm-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN,respectively,increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation.The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination,which suggests that the relaxation of the turbostratic BN(tBN)layer from the compressed condition is also hysteretic to film delamination.Moreover,cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN(amorphons BN)/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.

  16. Graphene-Hexagonal Boron Nitride Heterostructure as a Tunable Phonon–Plasmon Coupling System

    Directory of Open Access Journals (Sweden)

    Sheng Qu

    2017-02-01

    Full Text Available The layered van der Waals (vdW heterostructure, assembled from monolayer graphene, hexagonal boron nitride (h-BN and other atomic crystals in various combinations, is emerging as a new paradigm with which to attain desired electronic and optical properties. In this paper, we study theoretically the mid-infrared optical properties of the vdW heterostructure based on the graphene–h-BN system. The light–matter interaction of this heterostructure system is described by the hyperbolic phonon–plasmon polaritons which originate from the coupling modes of surface plasmon polaritons (SPPs in graphene with hyperbolic phonon polaritons (HPPs in h-BN. By numerical simulation, we find that the coupling modes are governed by the Fermi level of monolayer graphene, the thickness of the h-BN slab and the mode excitation sequence of SPPs and HPPs. Moreover, the response of the coupling modes of the graphene–h-BN heterostructure on a noble metal layer is also proposed in this paper.

  17. Interlayer transport through a graphene/rotated boron nitride/graphene heterostructure

    Science.gov (United States)

    Ge, Supeng; Habib, K. M. Masum; De, Amrit; Barlas, Yafis; Wickramaratne, Darshana; Neupane, Mahesh R.; Lake, Roger K.

    2017-01-01

    Interlayer electron transport through a graphene/hexagonal boron-nitride (h-BN)/graphene heterostructure is strongly affected by the misorientation angle θ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and current are analyzed using two different models, a tight-binding, nonequilibrium Green function model and an effective continuum model, and the qualitative features resulting from the two different models compare well. In the large-angle regime (θ >4∘) , the change in the effective h-BN band gap seen by an electron at the K point of the graphene causes the resistance to monotonically increase with angle by several orders of magnitude, reaching a maximum at θ =30∘ . It does not affect the peak-to-valley current ratios in devices that exhibit negative differential resistance. In the small-angle regime (θ <4∘) , umklapp processes open up new conductance channels that manifest themselves as nonmonotonic features in a plot of resistance versus Fermi level that can serve as experimental signatures of this effect. For small angles and high bias, the umklapp processes give rise to two new current peaks on either side of the direct tunneling peak.

  18. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    CERN Document Server

    Shiue, Ren-Jye; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dimitri; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-01-01

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photorespo...

  19. Highly confined low-loss plasmons in graphene-boron nitride heterostructures

    Science.gov (United States)

    Woessner, Achim; Lundeberg, Mark B.; Gao, Yuanda; Principi, Alessandro; Alonso-González, Pablo; Carrega, Matteo; Watanabe, Kenji; Taniguchi, Takashi; Vignale, Giovanni; Polini, Marco; Hone, James; Hillenbrand, Rainer; Koppens, Frank H. L.

    2015-04-01

    Graphene plasmons were predicted to possess simultaneous ultrastrong field confinement and very low damping, enabling new classes of devices for deep-subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. Although all of these great prospects require low damping, thus far strong plasmon damping has been observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this Article we exploit near-field microscopy to image propagating plasmons in high-quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine the dispersion and plasmon damping in real space. We find unprecedentedly low plasmon damping combined with strong field confinement and confirm the high uniformity of this plasmonic medium. The main damping channels are attributed to intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key to the development of graphene nanophotonic and nano-optoelectronic devices.

  20. Research on the piezoelectric response of cubic and hexagonal boron nitride films

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-ming; SUN Lian-jie; YANG Bao-he; GUO Yan; WU Xiao-guo

    2012-01-01

    Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/A(l)/Si(111) wafers byradio frequency (RF) magnetron sputtering.The structure of BN films is investigated by Fourier transform infrared (FTIR)spectroscopy and X-ray diffraction (XRD) spectra,and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM).The results show that when the flow ratio of nitrogen and argon is 2∶18,the cubic BN (c-BN) film is deposited with high purity and c-axis orientation,and when the flow ratio of nitrogen and argon is 4∶20,the hexagonal BN (h-BN) film is deposited with high c-axis orientation.Both particles are uniform and compact,and the roughnesses are 1.5 nm and 2.29 nm,respectively.The h-BN films have better piezoelectric response and distribution than the c-BN films.

  1. Synthesis and Characterization of Nano Boron Nitride Reinforced Magnesium Composites Produced by the Microwave Sintering Method

    Directory of Open Access Journals (Sweden)

    Manoj Gupta

    2013-05-01

    Full Text Available In this study, magnesium composites with nano-size boron nitride (BN particulates of varying contents were synthesized using the powder metallurgy (PM technique incorporating microwave-assisted two-directional sintering followed by hot extrusion. The effect of nano-BN addition on the microstructural and the mechanical behavior of the developed Mg/BN composites were studied in comparison with pure Mg using the structure-property correlation. Microstructural characterization revealed uniform distribution of nano-BN particulates and marginal grain refinement. The coefficient of thermal expansion (CTE value of the magnesium matrix was improved with the addition of nano-sized BN particulates. The results of XRD studies indicate basal texture weakening with an increase in nano-BN addition. The composites showed improved mechanical properties measured under micro-indentation, tension and compression loading. While the tensile yield strength improvement was marginal, a significant increase in compressive yield strength was observed. This resulted in the reduction of tension-compression yield asymmetry and can be attributed to the weakening of the strong basal texture.

  2. Thermal conduction across a boron nitride and SiO2 interface

    Science.gov (United States)

    Li, Xinxia; Yan, Yaping; Dong, Lan; Guo, Jie; Aiyiti, Adili; Xu, Xiangfan; Li, Baowen

    2017-03-01

    The need for efficient heat removal and superior thermal conduction in nano/micro devices has triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one of the candidates for thermal management and heat dissipation due to its novel physical properties, i.e. as a thermal conductor and electrical insulator. Here we report the interfacial thermal resistance between few-layer h-BN and its SiO2 substrate using the differential 3ω method. The measured interfacial thermal resistance is around ~1.6  ×  10‑8 m2K W‑1 for monolayer h-BN and ~3.4  ×  10‑8 m2K W‑1 for 12.8 nm-thick h-BN in metal/h-BN/SiO2 interfaces. Our results suggest that the voids and gaps between the substrate and thick h-BN flakes limit the interfacial thermal conduction. This work provides a deeper understanding of utilizing h-BN flakes as a lateral heat spreader in electronic and optoelectronic nano/micro devices with further miniaturization and integration.

  3. Hybrid boron nitride-natural fiber composites for enhanced thermal conductivity.

    Science.gov (United States)

    Xia, Changlei; Garcia, Andres C; Shi, Sheldon Q; Qiu, Ying; Warner, Nathaniel; Wu, Yingji; Cai, Liping; Rizvi, Hussain R; D'Souza, Nandika A; Nie, Xu

    2016-10-05

    Thermal conductivity was dramatically increased after adding natural fiber into hexagonal boron nitride (hBN)/epoxy composites. Although natural fiber does not show high-thermal conductivity itself, this study found that the synergy of natural fiber with hBN could significantly improve thermal conductivity, compared with that solely using hBN. A design of mixtures approach using constant fibers with increasing volume fractions of hBN was examined and compared. The thermal conductivity of the composite containing 43.6% hBN, 26.3% kenaf fiber and 30.1% epoxy reached 6.418 W m(-1) K(-1), which was 72.3% higher than that (3.600 W m(-1) K(-1)) of the 69.0% hBN and 31.0% epoxy composite. Using the scanning electron microscope (SEM) and micro computed tomography (micro-CT), it was observed that the hBN powders were well distributed and ordered on the fiber surfaces enhancing the ceramic filler's interconnection, which may be the reason for the increase in thermal conductivity. Additionally, the results from mechanical and dynamic mechanical tests showed that performances dramatically improved after adding kenaf fibers into the hBN/epoxy composite, potentially benefiting the composite's use as an engineered material.

  4. Thermal Conductivity of Polymer-Based Composites with Magnetic Aligned Hexagonal Boron Nitride Platelets.

    Science.gov (United States)

    Yuan, Chao; Duan, Bin; Li, Lan; Xie, Bin; Huang, Mengyu; Luo, Xiaobing

    2015-06-17

    Hexagonal boron nitride (hBN) platelets are widely used as the reinforcing fillers for enhancing the thermal conductivity of polymer-based composites. Since hBN platelets have high aspect ratio and show a highly anisotropic thermal property, the thermal conductivity of the hBNs-filled composites should be strongly associated with the platelets' orientation. However, the orientation effect has been explored less frequently due to the technical difficulties in precontrol of the platelets' orientation in the polymer matrix. In this paper, we report the use of magnetic fields to assemble the platelets into various microstructures and to study the thermal conductivities of the designed composites. The experimental results showed that thermal conductivities are dramatically different among these composites. For instance, the thermal conductivities of the composites with platelets oriented parallel and perpendicular to the heat flux direction are respectively 44.5% higher and 37.9% lower than that of unaligned composites at the volume fraction of 9.14%. The results were also analyzed by a theoretical model. The model suggests that the orientation of the hBN platelets is the main reason for the variance in the thermal conductivity.

  5. Functionalized hexagonal boron nitride nano-coatings for protection of transparent plastics

    Science.gov (United States)

    Van Tran, Thu; Usta, Aybala; Asmatulu, Ramazan

    2016-04-01

    Nanocoating is the result of a coating application of nanomaterials to build a consistent network of molecules in a paint to protect the surfaces of various materials and devices. Hexagonal Boron Nitride (h-BN) is in two dimensional form with excellent thermal, mechanical and chemical properties. These BN nanocoatings are also a thermally insulating material for heat management. After adding functionalized h-BNs into paints or other coatings, they will absorb the harmful UV part of sunlight and prevent coating against the environmental degradations. The impacts of the environmental factors on the coatings can be substantially eliminated. In the present study, h-BNs were modified with [2-(2-Aminoethylamino) propyl] trimethoxysilane and uniformly dispersed into the polyurethane coatings with different amounts, such as 0.1, 0.2, 0.4, and 0.8wt% to increase hardness and water resistance, and decrease the UV degradation level of coatings and transparent plastics. The prepared samples were characterized by using Fourier Transform Infrared Spectroscopy (FTIR), UV-Vis Spectroscopy, Scanning Electron Microscope (SEM), Water Contact Angle, and Differential Scanning Calorimeter (DSC). The test results showed that the nanocoatings with functionalized h-BN provided excellent physical and chemical behaviors against the UV and other physical degradations on the substrates.

  6. Picosecond pulsed laser processing of polycrystalline diamond and cubic boron nitride composite materials

    Science.gov (United States)

    Warhanek, Maximilian G.; Pfaff, Josquin; Meier, Linus; Walter, Christian; Wegener, Konrad

    2016-03-01

    Capabilities and advantages of laser ablation processes utilizing ultrashort pulses have been demonstrated in various applications of scientific and industrial nature. Of particular interest are applications that require high geometrical accuracy, excellent surface integrity and thus tolerate only a negligible heat-affected zone in the processed area. In this context, this work presents a detailed study of the ablation characteristics of common ultrahard composite materials utilized in the cutting tool industry, namely polycrystalline diamond (PCD) and polycrystalline cubic boron nitride composite (PCBN). Due to the high hardness of these materials, conventional mechanical processing is time consuming and costly. Herein, laser ablation is an appealing solution, since no process forces and no wear have to be taken into consideration. However, an industrially viable process requires a detailed understanding of the ablation characteristics of each material. Therefore, the influence of various process parameters on material removal and processing quality at 10 ps pulse duration are investigated for several PCD and PCBN grades. The main focus of this study examines the effect of different laser energy input distributions, such as pulse frequency and burst pulses, on the processing conditions in deep cutting kerfs and the resulting processing speed. Based on these results, recommendations for efficient processing of such materials are derived.

  7. Dielectric Properties of Boron Nitride-Ethylene Glycol (BN-EG) Nanofluids

    Science.gov (United States)

    Fal, Jacek; Cholewa, Marian; Gizowska, Magdalena; Witek, Adam; ŻyŁa, GaweŁ

    2016-10-01

    This paper presents the results of experimental investigation of the dielectric properties of ethylene glycol (EG) with various load of boron nitride (BN) nanoparticles. The nanofuids were prepared by using a two-step method on the basis of commercially available BN nanoparticles. The measurements were carried out using the Concept 80 System (NOVOCONTROL Technologies GmbH & Co. KG, Montabaur, Germany) in a frequency range from 10 Hz to 10 MHz and temperatures from 278.15 K to 328.15 K. The frequency-dependent real (ɛ ^' } ) and imaginary (ɛ ^' ' } ) parts of the complex permittivity (ɛ ^* ) and the alternating current (AC) conductivity are presented. Also, the effect of temperature and mass concentrations on the dielectric properties of BN-EG nanofluids are demonstrated. The results show that the most significant increase can be achieved for 20 wt.% of BN nanoparticles at 283.15 K and 288.15 K, that is eleven times larger than in the case of pure EG.

  8. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Teii, Kungen, E-mail: teii@asem.kyushu-u.ac.jp; Mizusako, Yusei; Hori, Takuro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, Seiichiro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  9. Decorated graphyne and its boron nitride analogue as versatile nanomaterials for CO detection

    Science.gov (United States)

    Omidvar, Akbar; Mohajeri, Afshan

    2015-12-01

    The sensitivity of a new two-dimensional (2D) carbon allotrope built from sp- and sp2-hybridised carbon atoms, graphyne (GY), as well as its boron nitride analogue (BN-yne) towards CO molecule has been theoretically investigated. Indeed, a theoretical understanding of the interaction between gas molecules and extended carbon-based network structures is crucial for developing new materials that could have a wide range of applications. Here, we report our first-principles calculations to explore the impact of metal decoration on the GY and BN-yne upon the CO adsorption. We predict that Ca and Li decorations significantly enhance the CO-sensing ability of the GY and BN-yne compared to that of their pristine sheets. Owing to strong interactions between CO and the decorated GY and BN-yne, dramatic changes in the electronic properties of the sheets together with large band gap variations were observed. The present study sheds a deep insight into the sensing properties of the novel carbon-based 2D structures beyond the graphene sheet.

  10. Transport properties of monolayer and bilayer graphene supported by hexagonal boron nitride

    Science.gov (United States)

    Li, Jing; Zou, Ke; Seiwell, Donald; Zhu, Jun

    2013-03-01

    We present transport studies on hexagonal boron nitride (h-BN) supported monolayer and bilayer graphene. Following the method introduced by Dean et al, we first exfoliate thin sheets of h-BN (15-20 nm) to SiO2/Si substrate then align and transfer exfoliated graphene flakes onto the h-BN sheets. E-beam lithography is used to process the samples into Hall bar devices. We find that current annealing at low temperature can increase the mobility of as-fabricated devices but often introduces large density inhomogeneity at the same time. AFM images of annealed devices reveal the limitations of this technique. In comparison, thermal annealing is much more reliable in improving the sample quality. Bilayer devices annealed in a flow of Ar/H2 at 450C for 5 hours show high mobility of 30,000 cm2/Vs at low temperature. We observe high-quality Shubnikov-de Hass (SdH) oscillations and degeneracy-lifted Landau levels in these samples. We extend existing measurements of the electron and hole effective mass in bilayer graphene to lower carrier density regimes and discuss the implications of the results. Department of Applied Physics, Yale University

  11. Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride

    Science.gov (United States)

    Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

    2016-12-01

    Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the most important methods to elucidate the insulating quality of h-BN. In this work, the EBD of high quality exfoliated single-crystal h-BN was investigated using three different electrode structures under different environmental conditions to determine the ideal electrode structure and environment for EBD measurement. A systematic investigation revealed that EBD is not sensitive to contact force or electrode area but strongly depends on the relative humidity during measurement. Once the measurement environment is properly managed, it was found that the EBD values are consistent within experimental error regardless of the electrode structure, which enables the evaluation of the crystallinity of synthesized h-BN at the microscopic and macroscopic level by utilizing the three different electrode structures properly for different purposes.

  12. Electrical Transport and Network Percolation in Graphene and Boron Nitride Mixed-Platelet Structures.

    Science.gov (United States)

    Debbarma, Rousan; Behura, Sanjay; Nguyen, Phong; Sreeprasad, T S; Berry, Vikas

    2016-04-06

    Percolating network of mixed 2D nanomaterials (2DNs) can leverage the unique electronic structures of different 2DNs, their interfacial doping, manipulable conduction pathways, and local traps. Here, we report on the percolation mechanism and electro-capacitive transport pathways of mixed-platelet network of hexagonal boron nitride (hBN) and reduced graphene oxide (rGO), two isostructural and isoelectronic 2DNs. The transport mechanism is explained in terms of electron hopping through isolated hBN defect traps between rGO (possibly via electron tunneling/hopping through "funneling" points). With optical bandgaps of 4.57 and 4.08 eV for the hBN-domains and 2.18 eV for the rGO domains, the network of hBN with rGO exhibits Poole-Frenkel emission-based transport with mean hopping gap of 1.12 nm (∼hBN trilayer) and an activation barrier of ∼15 ± 0.7 meV. Further, hBN (1.7 pF) has a 6-fold lower capacitance than 1:1 hBN:rGO, which has a resistance 2 orders of magnitude higher than that of rGO (1.46 MΩ). These carrier transport results can be applied to other multi-2DN networks for development of next-generation functional 2D-devices.

  13. The magnetism and spin-dependent electronic transport properties of boron nitride atomic chains

    Science.gov (United States)

    An, Yipeng; Zhang, Mengjun; Wu, Dapeng; Fu, Zhaoming; Wang, Tianxing; Jiao, Zhaoyong; Wang, Kun

    2016-07-01

    Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 μB for BnNn-1, 2 μB for BnNn, and 3 μB for BnNn+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short BnNn+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long BnNn+1 chains under high bias voltages and other types of BN atomic chains (BnNn-1 and BnNn). The proposed short BnNn+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied.

  14. Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy

    Science.gov (United States)

    Kimura, Taishi; Aoki, Yuko; Horibuchi, Kayo; Nakamura, Daisuke

    2016-12-01

    The work reported herein demonstrated that nanopipes can be formed via a surfactant effect, in which boron impurities preferentially migrate to semipolar and nonpolar facets. Approximately 3 μm-thick GaN layers were grown using halogen-free vapor phase epitaxy. All layers grown in pyrolytic boron nitride (pBN) crucibles were found to contain a high density of nanopipes in the range of 1010 to 1011 cm-2. The structural properties of these nanopipes were analyzed by X-ray rocking curve measurements, transmission electron microscopy, and three-dimensional atom probe (3DAP) tomography. The resulting 3DAP maps showed nanopipe-sized regions of boron segregation, and these nanopipes were not associated with the presence of dislocations. A mechanism for nanopipe formation was developed based on the role of boron as a surfactant and considering energy minima. A drastic reduction in the nanopipe density was achieved upon replacing the pBN crucibles with tantalum carbide-coated carbon crucibles. Consequently, we have confirmed that nanopipes can be formed solely due to surface energy changes induced by boron impurity surface segregation. For this reason, these results also indicate that nanopipes should be formed by other surfactant impurities such as Mg and Si.

  15. Electronic Properties of Boron Nanotubes under Uniaxial Strain: a DFT study

    Institute of Scientific and Technical Information of China (English)

    PAN Li-Jun; JIA Yu; SUN Qiang; HU Xing

    2011-01-01

    @@ Electronic structures of a uniaxially stretched boron nanotube(BNT) are studied by the density functional theory (DFT) and compared with a zigzag single-walled carbon nanotube(CNT).It is verified that modifications of the electronic band structures of CNTs may be classified into three patterns depending on their helicity under the applied strain up to 20%.However, for the BNT, the partial boron bonds will be broken as the applied strain is more than 10%, indicating its poor deformation ability as compated with CNTs.Moreover, the band gap of the BNT keeps or converts to zero regardless of its chirality as the applied strain increases, which is drastically distinct from the CNT.The special behavior of the BNT implies a potential application as an excellent stress sensor.

  16. Combination of carbon nitride and carbon nanotubes: synergistic catalysts for energy conversion.

    Science.gov (United States)

    Gong, Yutong; Wang, Jing; Wei, Zhongzhe; Zhang, Pengfei; Li, Haoran; Wang, Yong

    2014-08-01

    Due to their versatile features and environmental friendliness, functionalized carbon materials show great potential in practical applications, especially in energy conversion. Developing carbon composites with properties that can be modulated by simply changing the ratio of the original materials is an intriguing synthetic strategy. Here, we took cyanamide and multiwalled carbon nanotubes as precursors and introduced a facile method to fabricate a series of graphitic carbon nitride/carbon nanotubes (g-C3 N4 /CNTs) composites. These composites demonstrated different practical applications with different weight ratios of the components, that is, they showed synergistic effects in optoelectronic conversion when g-C3 N4 was the main ingredient and in oxygen reduction reaction (ORR) when CNTs dominated the composites. Our experiments indicated that the high electrical conductivity of carbon nanotubes promoted the transmission of the charges in both cases.

  17. Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

    Directory of Open Access Journals (Sweden)

    Shenoy Vivek

    2011-01-01

    Full Text Available Abstract The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage.

  18. Theoretical simulations of regular and defective aluminium nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Zhukovskii, Yu F [Institute for Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063 (Latvia); Popov, A I [Institute for Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063 (Latvia); Balasubramanian, C [Department of Environmental, Occupational and Social Medicine, University of Rome Tor Vergata, Via Montpellier 1, I-00133 Rome (Italy); Bellucci, S [INFN-Laboratori Nazionali di Frascati, Via Enrico Fermi 40, I-00044 Frascati (Italy)

    2007-12-15

    For theoretical simulation on AlN nanotubes (NTs) of different chiralities (armchair-and zigzag-type) and uniform diameters, we have considered their single-walled (SW) 1D periodic models. For this aim, we have performed ab initio DFT calculations on AlN SW NTs using formalism of the localized Gaussian-type atomic functions as implemented in CRYSTAL-03 computer code. We have shown that the smaller the diameter of AlN single-walled nanotube is, the closer its electronic and structural properties to AlN bulk. We have analysed an influence of N vacancies (neutral F centres) created by either soft irradiation of nanotubes or under experimental conditions of their growth, on the atomic and electronic structure of AlN SW NTs. We have found the small inward relaxation of the Al nearest neighbours and the N next-nearest neighbours around each point defect formed on 1 nm AlN NTs of both chiralities. Presence of N vacancy in both types of nanotubes has resulted in appearance of the two defect energy levels in their band gaps consisting of mainly 3s and 3p states of the nearest Al atoms.

  19. First-principles calculations on the structure and electronic properties of boron doping zigzag single-walled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    WEN QingBo; YU ShanSheng; ZHENG WeiTao

    2009-01-01

    Calculations have been made for single-walled zigzag (n, 0) carbon nanotubes containing substitutional boron impurity atoms using ab initio density functional theory. It is found that the formation energies of these nanotubes depend on the tube diameter, as do the electronic properties, and show periodic fea-ture that results from their different π bonding structures compared to those of perfect zigzag carbon nanotubes. When more boron atoms are incorporated into a single-walled zigzag carbon nanotube, the substitutional boron atoms tend to come together to form structure of BC3 nanodomains, and B-doped tubes have striking acceptor states above the top of the valence bands. For the structure of BC3, there are two kinds of configurations with different electronic structures.

  20. First-principles calculations on the structure and electronic properties of boron doping zigzag single-walled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Calculations have been made for single-walled zigzag(n,0) carbon nanotubes containing substitutional boron impurity atoms using ab initio density functional theory.It is found that the formation energies of these nanotubes depend on the tube diameter,as do the electronic properties,and show periodic fea-ture that results from their different π bonding structures compared to those of perfect zigzag carbon nanotubes.When more boron atoms are incorporated into a single-walled zigzag carbon nanotube,the substitutional boron atoms tend to come together to form structure of BC3 nanodomains,and B-doped tubes have striking acceptor states above the top of the valence bands.For the structure of BC3,there are two kinds of configurations with different electronic structures.

  1. Low pressure synthesis of boron nitride with(C2H5)2O·BF3 and Li3N precursor

    Institute of Scientific and Technical Information of China (English)

    WANG Shao-bo; XU Xiao-wei; FAN Hui-li; LI Yu-ping

    2005-01-01

    Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of 300 ℃ by selecting liquid(C2H5)2O·BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B-F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.

  2. XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li{sub 3}N as catalysis

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiaofei [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); School of Materials Science and Engineering, Shandong University, Ji’nan 250061 (China); Xu, Bin, E-mail: xubin@sdjzu.edu.cn [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); Zhang, Wen [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China); Cai, Zhichao [School of Materials Science and Engineering, Shandong University, Ji’nan 250061 (China); Wen, Zhenxing [School of Materials Science and Engineering, Shandong Jianzhu University, Ji’nan 250101 (China)

    2014-12-01

    Highlights: • The cBN was synthesized by Li{sub 3}N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp{sup 2} fractions are decreasing, and the sp{sup 3} fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li{sub 3}N in the film, it is possible that Li{sub 3}N first reacts with hexagonal boron nitride to produce Li{sub 3}BN{sub 2} during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li{sub 3}BN{sub 2} under high pressure and high temperature, but not directly from the decomposition of Li{sub 3}BN{sub 2}.

  3. Effect of composition of titanium in silver-copper-titanium braze alloy on dissimilar laser brazing of binder-less cubic boron nitride and tungsten carbide

    Science.gov (United States)

    Sechi, Yoshihisa; Nagatsuka, Kimiaki; Nakata, Kazuhiro

    2014-08-01

    Laser brazing with Ti as an active element in silver-copper alloy braze metal has been carried out for binder-less cubic boron nitride and tungsten carbide, using silver-copper- titanium braze alloys with titanium content that varied between 0.28 mass% and 1.68 mass%. Observations of the interface using electron probe microanalysis and scanning acoustic microscopy show that efficient interface adhesion between binder-less cubic boron nitride and the silver-copper-titanium braze alloy was achieved for the braze with a titanium content of 0. 28 mass%.

  4. CO oxidation catalyzed by the single Co atom embedded hexagonal boron nitride nanosheet: a DFT-D study.

    Science.gov (United States)

    Lu, Zhansheng; Lv, Peng; Liang, Yanli; Ma, Dongwei; Zhang, Yi; Zhang, Wenjin; Yang, Xinwei; Yang, Zongxian

    2016-08-21

    A single metal atom stabilized on two dimensional materials (such as graphene and h-BN) exhibits extraordinary activity in the oxidation of CO. The oxidation of CO by molecular O2 on a single cobalt atom embedded in a hexagonal boron nitride monolayer (h-BN) is investigated using first-principles calculations with dispersion-correction. It is found that the single Co atom prefers to reside in a boron vacancy and possesses great stability. There are three mechanisms for CO oxidation: the traditional Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) mechanisms and the termolecular Eley-Rideal (TER) mechanism proposed recently. Given the relatively small reaction barriers of the rate-limiting steps for the ER, LH and TER mechanisms (0.59, 0.55 and 0.41 eV, respectively), all three mechanisms are able to occur at low temperature. The current study may provide useful clues to develop low cost single atom catalysts.

  5. A simple and green route to transparent boron nitride/PVA nanocomposites with significantly improved mechanical and thermal properties

    Institute of Scientific and Technical Information of China (English)

    Zhi-Qiang Duan; Yi-Tao Liu; Xu-Ming Xie; Xiong-Ying Ye

    2013-01-01

    A simple and green method is developed to prepare hexagonal boron nitride (h-BN)/poly(vinyl alcohol) (PVA) nanocomposites by using water as a common solvent of h-BN nanosheets and PVA.The obtained hBN/PVA nanocomposites are highly transparent,and have significantly improved mechanical and thermal properties.They may outperform nano-clay and nano-alumina/PVA nanocomposites as flexible optoelectronic devices,optical windows and heat-releasing materials operated in oxidative or corrosive environment.

  6. Bonding distances as Exact Sums of the Radii of the Constituent Atoms in Nanomaterials - Boron Nitride and Coronene

    CERN Document Server

    Heyrovska, Raji

    2010-01-01

    This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to graphite in three-dimensions. However, they have very different properties: whereas graphene is a conductor, h-BN is an electrical insulator and coronene is a polycyclic aromatic hydrocarbon of cosmological interest. The atomic structures presented here are based on bond lengths as the sums of the atomic radii.

  7. Analysis of Vacancy defects in Hybrid Graphene-Boron Nitride Armchair Nanoribbon based n-MOSFET at Ballistic Limit

    OpenAIRE

    Chanana, Anuja; Sengupta, Amretashis; Mahaptra, Santanu

    2015-01-01

    Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) for...

  8. Electric field effect on (6,0) zigzag single-walled aluminum nitride nanotube.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Moghimi, Masoumeh

    2012-09-01

    Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using a locally modified version of the GAMESS electronic structure program. The dipole moments, atomic charge variations, and total energy of the (6,0) zigzag AlNNT show increases with increase in the applied external electric field strengths. The length, tip diameters, electronic spatial extent, and molecular volume of the nanotube do not significantly change with increasing electric field strength. The energy gap of the nanotube decreases with increases of the electric field strength and its reactivity is increased. Increase of the ionization potential, electron affinity, chemical potential, electrophilicity, and HOMO and LUMO in the nanotube with increase of the applied parallel electric field strengths shows that the parallel field has a much stronger interaction with the nanotube with respect to the transverse electric field strengths. Analysis of the parameters indicates that the properties of AlNNTs can be controlled by the proper external electric field.

  9. Electronic properties and relative stabilities of heterogeneous edge-decorated zigzag boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Li, L.L., E-mail: liabc@hebut.edu.cn; Yu, X.F.; Yang, X.J.; Zhang, X.H.; Xu, X.W.; Jin, P.; Zhao, J.L.; Wang, X.X.; Tang, C.C., E-mail: tangcc@hebut.edu.cn

    2015-11-15

    The wide band gap of boron nitride (BN) materials has been a major bottleneck for a wider application of BN in electronics. In this work, density functional theory computations were used to study the band structure of zigzag BN nanoribbons (BNNRs). Due to the ionic origin of the BN band gap, a heterogeneous edge decoration is an effective way to modulate the electronic band structure of BNNRs. This study demonstrates that a metallic behavior and magnetism can be realized by applying a NO{sub 2}–NH{sub 2} pair edge decoration. Although the lone electron pair of the NH{sub 2} group is partly responsible for the metallic behavior, the effective potential difference induced by the donor–acceptor pair is also crucial for metallic behavior. Furthermore, these newly formed BNNRs were found to be more stable than H-passivated BNNRs. This simple chemical modification method offers great opportunities for the development of future BNNR-based electronic devices. - Graphical abstract: Due to the ionic origin of a BN band gap, heterogeneous edge decoration is an effective way to modulate its electronic structures. Metallicity and magnetism can be realized by NO{sub 2}–NH{sub 2} pair decoration. Although the N lone pair electrons in NH{sub 2} group are responsible for the metallicity, the effective potential difference induced by a donor–acceptor pair is crucial for the formation of metallicity. - Highlights: • Heterogeneous edge decoration is effective for tuning BNNRs' electronic structures. • NO{sub 2}–NH{sub 2} pair decoration can lead to metallic behavior and magnetism for BNNRs. • The effective potential difference is crucial for the formation of metallicity. • NO{sub 2}–NH{sub 2} pair decorated BNNRs is more stable than H-passivated ones.

  10. Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Doan, T.C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J.Y.; Jiang, H.X., E-mail: hx.jiang@ttu.edu

    2014-06-01

    Solid-state thermal neutron detectors with improved detection efficiencies are highly sought after for many applications. Hexagonal boron nitride (hBN) epilayers have been synthesized by metal organic chemical vapor deposition on sapphire substrates. Important material parameters including the mobility-lifetime (μτ) product and the thermal neutron absorption length (λ) have been measured. For hBN epilayers with a room temperature resistivity of 5.3×10{sup 10} Ω cm, the measured μτ product of electrons is 4.46×10{sup −8} cm{sup 2}/V and of holes is 7.07×10{sup −9} cm{sup 2}/V. The measured λ values are 277 μm and 77 μm for natural and {sup 10}B enriched hBN epilayers, respectively. Metal–semiconductor–metal detectors incorporating 0.3 µm thick hBN epilayers were fabricated. The reaction product pulse-height spectra were measured under thermal neutron irradiation produced by a {sup 252}Cf source moderated by high density polyethylene block. The measured pulse-height spectra revealed distinguishable peaks corresponding to the product energies of {sup 10}B and neutron reaction with the 0.84 MeV {sup 7}Li peak being the most prominent. The detectors exhibited negligible responses to gamma rays produced by {sup 137}Cs decay. Our results indicate that hBN epilayers are highly promising for realizing highly sensitive solid-state thermal neutron detectors with expected advantages resulting from semiconductor technologies, including compact size, light weight, ability to integrate with other functional devices, and low cost.

  11. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Energy Technology Data Exchange (ETDEWEB)

    Doan, T.C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J.Y.; Jiang, H.X., E-mail: hx.jiang@ttu.edu

    2015-05-21

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for {sup 10}B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10{sup −7} cm{sup 2}/V for electrons and holes, which is comparable to the value of about 10{sup −7} cm{sup 2}/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  12. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    Science.gov (United States)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  13. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    Science.gov (United States)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  14. Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride

    Science.gov (United States)

    Hipolito, F.; Pedersen, Thomas G.; Pereira, Vitor M.

    2016-07-01

    The dc photoelectrical currents can be generated purely as a nonlinear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene, biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the nonlinear current using a perturbative expansion of the density matrix. This allows a microscopic description of the quadratic response to an electromagnetic field in these materials, which we analyze as a function of temperature and electron density. We find that the intrinsic response is robust across these systems and allows for currents in the range of pA cm/W to nA cm/W. At the independent-particle level, the response of hBN-based structures is significant only in the ultraviolet due to their sizable band gap. However, when Coulomb interactions are accounted for by explicit solution of the Bethe-Salpeter equation, we find that the photoconductivity is strongly modified by transitions involving exciton levels in the gap region, whose spectral weight dominates in the overall frequency range. Biased bilayers and gapped monolayers of graphene have a strong photoconductivity in the visible and infrared window, allowing for photocurrent densities of several nA cm/W. We further show that the richer electronic dispersion of BBG at low energies and the ability to change its band gap on demand allows a higher tunability of the photocurrent, including not only its magnitude but also, and significantly, its polarity.

  15. Characteristics of plate-like and color-zoning cubic boron nitride crystals

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shuang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Hou, Lixin, E-mail: houlixin_2000@126.com [College of Information and Technology, Jilin Agricultural University, 2888 Xincheng Street, Changchun 130118 (China); Liu, Xiuhuan [College of Telecommunication Engineering, Jilin University, 5372 Nanhu Road, Changchun 130012 (China); Gao, Yanjun; Li, Xinlu; Wang, Qi [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Chen, Zhanguo, E-mail: czg@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); Jia, Gang; Zheng, Jie [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2013-11-15

    The polarities of a kind of plate-like and color-zoning cubic boron nitride (cBN) crystal were extensively investigated by microscopy, chemical etching, XPS, Raman scattering, and current–voltage measurements. The {1 1 1}B faces and {1"¯1"¯1"¯}N faces of the cBN samples can be easily distinguished by optical microscope as there are a lot of defects incorporate in {1"¯1"¯1"¯}N sectors serving as the color centers, while the {1 1 1}B sectors have less defects and are nearly colorless. Both XPS and Raman spectra also revealed the uneven distributions of N vacancies and substitutional impurities in cBN crystals. The determination of {1 1 1}B faces and {1"¯1"¯1"¯}N faces can also be verified by the results of the chemical etching because the {1"¯1"¯1"¯}N faces have much faster etch rates than the {1 1 1}B faces. According to XPS, the {1 1 1}B faces have more C and O contaminations than the {1"¯1"¯1"¯}N faces, however the {1"¯1"¯1"¯}N faces have larger atomic ratio of B:N after surface cleaning by Ar{sup +} sputtering. In the Raman spectra of the {1"¯1"¯1"¯}N sectors of cBN, several small broad infrared-active phonon bands emerge nearby TO and LO modes because of the disorder-activated Raman scattering. As for the {1 1 1}B sectors, this phenomenon disappears. In addition, the {1 1 1}B faces have much smaller leakage current than the {1"¯1"¯1"¯}N faces, which indicates that the {1 1 1}B sectors have higher crystalline quality.

  16. Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics

    KAUST Repository

    Zhang, Kai

    2013-09-01

    Vertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Hexagonal boron nitride as a tablet lubricant and a comparison with conventional lubricants.

    Science.gov (United States)

    Uğurlu, Timuçin; Turkoğlu, Murat

    2008-04-02

    The objective of this study was to investigate the lubrication properties of hexagonal boron nitride (HBN) as a new tablet lubricant and compare it with conventional lubricants such as magnesium stearate (MGST), stearic acid (STAC), and glyceryl behenate (COMP). Tablets were manufactured on an instrumented single-station tablet press to monitor lower punch ejection force (LPEF) containing varied lubricants in different ratio (0.5, 1, 2%). Tablet crushing strength, disintegration time and thickness were measured. Tensile strength of compacted tablets were measured by applying a diametrical load across the edge of tablets to determine mechanical strength. The deformation mechanism of tablets was studied during compression from the Heckel plots with or without lubricants. MGST was found to be the most effective lubricant based on LPEF-lubrication concentration profile and LPEF of HBN was found very close to that of MGST. HBN was better than both STAC and COMP. A good lubrication was obtained at 0.5% for MGST and HBN (189 and 195N, respectively). Where COMP and STAC showed 20 and 35% more LPEF compare to that of MGST (239 and 288N, respectively). Even at the concentration of 2% COMP and STAC did not decrease LPEF as much as 0.5% of MGST and HBN. Like all conventional lubricants the higher the concentration of HBN the lower the mechanical properties of tablets because of its hydrophobic character. However, this deterioration was not as pronounced as MGST. HBN had no significant effect on tablet properties. Based on the Heckel plots, it was observed that after the addition of 1% lubricant granules showed less plastic deformation.

  18. Massive radius-dependent flow slippage in carbon nanotubes

    Science.gov (United States)

    Siria, Alessandro; Secchi, Eleonora; Marbach, Sophie; Niguès, Antoine; Stein, Derek; Bocquet, Lydéric

    2016-11-01

    Nanofluidics is the frontier where the continuum picture of fluid mechanics confronts the atomic nature of matter. Recent reports indicate that carbon nanotubes exhibit exceptional water transport properties due to nearly frictionless interfaces and this has stimulated interest in nanotube-based membranes for desalination, nano-filtration, and energy harvesting. However, the fundamental mechanisms of water transport inside nanotubes and at water-carbon interfaces remain controversial, as existing theories fail to provide a satisfying explanation for the limited experimental results. We report a study of water jets emerging from single nanotubes made of carbon and boron-nitride materials. Our experiments reveal extensive and radius-dependent surface slippage in carbon nanotubes (CNT). In stark contrast, boron-nitride nanotubes (BNNT), which are crystallographically similar to CNTs but electronically different, exhibit no slippage. This shows that slippage originates in subtle atomic-scale details of the solid-liquid interface. ERC StG - NanoSOFT.

  19. Investigation of wear and tool life of coated carbide and cubic boron nitride cutting tools in high speed milling

    Directory of Open Access Journals (Sweden)

    Pawel Twardowski

    2015-06-01

    Full Text Available The objective of the investigation was analysis of the wear of milling cutters made of sintered carbide and of boron nitride. The article presents the life period of the cutting edges and describes industrial conditions of the applicability of tools made of the materials under investigation. Tests have been performed on modern toroidal and ball-end mill cutters. The study has been performed within a production facility in the technology of high speed machining of 55NiCrMoV6 and X153CrMoV12 hardened steel. The analysed cutting speed is a parameter which significantly influences the intensity of heat generated in the cutting zone. Due to the wear characteristics, two areas of applicability of the analysed tools have been distinguished. For vc  ≤ 300 m/min, sintered carbide edges are recommended; for vc  > 500 m/min, boron nitride edges. For 300 ≤ vc  ≤ 500 m/min, a transition area has been observed. It has been proved that the application of sintered carbide edges is not economically justified above certain cutting speed.

  20. Anticorrosive performance of waterborne epoxy coatings containing water-dispersible hexagonal boron nitride (h-BN) nanosheets

    Science.gov (United States)

    Cui, Mingjun; Ren, Siming; Chen, Jia; Liu, Shuan; Zhang, Guangan; Zhao, Haichao; Wang, Liping; Xue, Qunji

    2017-03-01

    Homogenous dispersion of hexagonal boron nitride (h-BN) nanosheets in solvents or in the polymer matrix is crucial to initiate their many applications. Here, homogeneous dispersion of hexagonal boron nitride (h-BN) in epoxy matrix was achieved with a water-soluble carboxylated aniline trimer derivative (CAT-) as a dispersant, which was attributed to the strong π-π interaction between h-BN and CAT-, as proved by Raman and UV-vis spectra. Transmission electron microscopy (TEM) analysis confirmed a random dispersion of h-BN nanosheets in the waterborne epoxy coatings. The deterioration process of water-borne epoxy coating with and without h-BN nanosheets during the long-term immersion in 3.5 wt% NaCl solution was investigated by electrochemical measurements and water absorption test. Results implied that the introduction of well dispersed h-BN nanosheets into waterborne epoxy system remarkably improved the corrosion protection performance to substrate. Moreover, 1 wt% BN/EP composite coated substrate exhibited higher impedance modulus (1.3 × 106 Ω cm2) and lower water absorption (4%) than those of pure waterborne epoxy coating coated electrode after long-term immersion in 3.5 wt% NaCl solution, demonstrating its superior anticorrosive performance. This enhanced anticorrosive performance was mainly ascribed to the improved water barrier property of epoxy coating via incorporating homogeneously dispersed h-BN nanosheets.

  1. Boron-doped few-walled carbon nanotubes: novel synthesis and properties

    Science.gov (United States)

    Preston, Colin; Song, Da; Taillon, Josh; Cumings, John; Hu, Liangbing

    2016-11-01

    Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

  2. Modifications of multi-wall carbon nanotubes with B-containing vapor and their effects on the properties of boron carbide matrix nanocomposites.

    Science.gov (United States)

    Herth, S; Miranda, D; Doremus, R H; Siegel, R W

    2008-06-01

    Multi-wall carbon nanotubes were modified by heating them together with elemental boron powder. B4C crystals grew on the surfaces of the nanotubes, and electron diffraction patterns showed an orientation dependence of the surface B4C and the underlying carbon in the nanotubes. There was no reaction of the nanotubes with solid B2O3 alone. Composites of the modified nanotubes in a B4C matrix showed a small increase of density over sintered B4C.

  3. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

    Science.gov (United States)

    Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

    2015-11-16

    Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

  4. A new class of boron nitride fibers with tunable properties by combining an electrospinning process and the polymer-derived ceramics route.

    Science.gov (United States)

    Salles, Vincent; Bernard, Samuel; Brioude, Arnaud; Cornu, David; Miele, Philippe

    2010-02-01

    Novel boron nitride (BN) fibers have been developed with diameters ranging from the nano- to microscale by thermal conversion of as-electrospun fibers from polyacrylonitrile and poly[B-(methylamino)borazine] blend solutions. Such a new class of ceramic fibers is seen as potential candidate for thermal management applications and filtration systems in harsh environments.

  5. Transport properties of boron-doped single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.T. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ding, R.X., E-mail: rx_ding@163.co [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Song, J.X. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Electronic Engineering, Xi' an Shiyou University, Xi' an 710075 (China)

    2011-01-15

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  6. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure.

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-11-20

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure-temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure-room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear.

  7. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I.; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-01-01

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure–temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure–room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear. PMID:23129624

  8. Characteristics of plate-like and color-zoning cubic boron nitride crystals

    Science.gov (United States)

    Feng, Shuang; Hou, Lixin; Liu, Xiuhuan; Gao, Yanjun; Li, Xinlu; Wang, Qi; Chen, Zhanguo; Jia, Gang; Zheng, Jie

    2013-11-01

    The polarities of a kind of plate-like and color-zoning cubic boron nitride (cBN) crystal were extensively investigated by microscopy, chemical etching, XPS, Raman scattering, and current-voltage measurements. The {1 1 1}B faces and {1¯ 1¯ 1¯}N faces of the cBN samples can be easily distinguished by optical microscope as there are a lot of defects incorporate in {1¯ 1¯ 1¯}N sectors serving as the color centers, while the {1 1 1}B sectors have less defects and are nearly colorless. Both XPS and Raman spectra also revealed the uneven distributions of N vacancies and substitutional impurities in cBN crystals. The determination of {1 1 1}B faces and {1¯ 1¯ 1¯}N faces can also be verified by the results of the chemical etching because the {1¯ 1¯ 1¯}N faces have much faster etch rates than the {1 1 1}B faces. According to XPS, the {1 1 1}B faces have more C and O contaminations than the {1¯ 1¯ 1¯}N faces, however the {1¯ 1¯ 1¯}N faces have larger atomic ratio of B:N after surface cleaning by Ar+ sputtering. In the Raman spectra of the {1¯ 1¯ 1¯}N sectors of cBN, several small broad infrared-active phonon bands emerge nearby TO and LO modes because of the disorder-activated Raman scattering. As for the {1 1 1}B sectors, this phenomenon disappears. In addition, the {1 1 1}B faces have much smaller leakage current than the {1¯ 1¯ 1¯}N faces, which indicates that the {1 1 1}B sectors have higher crystalline quality.

  9. A new generation of B(n)N(n) rings as a supplement to boron nitride tubes and cages.

    Science.gov (United States)

    Monajjemi, Majid; Boggs, James E

    2013-02-21

    In B(n)N(n) cages or tubes, when the quasi-borazine rings are attached to each other through a pair of common atoms of B and N, the bonding structure is named class A. On the other hand, there are some B(n)N(n) rings including a covalent bond between two atoms of B and N, which are named class B. In all previous studies, both reports of synthesis and theoretical calculation of boron nitride tubes and cages, the quasi-borazine units are attached together like class A. There are no theoretical or experimental reports from class B compounds except for a brief study in our previous works (Struct. Chem. 2012, 23, 551-580; J. Phys. Chem. C 2010, 114, 15315.). In this study, we have used two kinds of boron nitride rings from a twisted BN sheet in the same chirality created by different mechanisms. For (4, 4) chirality, the molecules B(16)N(16) and B(15)N(15) are found to respectively represent class A and B, and for (5, 5) chirality the molecules B(20)N(20) and B(18)N(18) are respectively again of class A and B. The structure of class A rings is similar to boron nitride tubes, but we have shown that it is impossible to produce a macromolecule of class B form as tubes or cages, because there is much more instability and intermolecular tension in macro forms of class B. This is the main reason that the class B molecules are rare and, because of their small size, have not yet been synthesized, although we have some suggestions for the synthesis of these kinds of molecules. The stability and electromagnetic properties with hybrid density functional theory using the EPR-III and EPR-II basis sets for explanation of hyperfine parameters and spin densities, electrical potential, and isotropic Fermi coupling constant of these rings have been studied by the nonbonded interaction models. Normal mode analyses including aromaticity have been investigated by using the nucleus independent chemical shift values at the ring center. Interaction energy and gain in energy aid in describing

  10. A study of the influence of cutting parameters on micromilling of steel with cubic boron nitride (CBN) tools

    Science.gov (United States)

    Klocke, Fritz; Quito, Fernando; Arntz, Kristian; Souza, Alexandre

    2009-02-01

    It has been concluded in previous studies that Cubic Boron Nitride (CBN) tools have greater wear resistance and superior tool life than other tool materials used in conventional milling, due to chemically stability at high temperatures, high abrasive wear resistance and high degree of hardness; however no research has been conducted about its performance on micro milling. Burr formation has a direct negative effect on product quality and assembly automation in micro milling, therefore adoption of machining strategies and influencing factors were investigated intending to reduce burr formation. This paper also aims at analyzing the interference of cutting parameters on micro milling with CBN tools, such as the influence of cutting speed and feed per tooth on the surface quality and tool life. These outcomes enable us to know which parameters and strategies must be used to achieve better results when micro milling steel with CBN tools.

  11. Enhancement of toughness and wear resistance in boron nitride nanoplatelet (BNNP) reinforced Si3N4 nanocomposites

    Science.gov (United States)

    Lee, Bin; Lee, Dongju; Lee, Jun Ho; Ryu, Ho Jin; Hong, Soon Hyung

    2016-06-01

    Ceramics have superior hardness, strength and corrosion resistance, but are also associated with poor toughness. Here, we propose the boron nitride nanoplatelet (BNNP) as a novel toughening reinforcement component to ceramics with outstanding mechanical properties and high-temperature stability. We used a planetary ball-milling process to exfoliate BNNPs in a scalable manner and functionalizes them with polystyrene sulfonate. Non-covalently functionalized BNNPs were homogeneously dispersed with Si3N4 powders using a surfactant and then consolidated by hot pressing. The fracture toughness of the BNNP/Si3N4 nanocomposite increased by as much as 24.7% with 2 vol.% of BNNPs. Furthermore, BNNPs enhanced strength (9.4%) and the tribological properties (26.7%) of the ceramic matrix. Microstructural analyzes have shown that the toughening mechanisms are combinations of the pull-out, crack bridging, branching and blunting mechanisms.

  12. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  13. Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Kelly, Paul J.; Dash, Saroj P.

    2016-02-01

    Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.

  14. Excitation wavelength dependence of water-window line emissions from boron-nitride laser-produced plasmas.

    Science.gov (United States)

    Crank, M; Harilal, S S; Hassan, S M; Hassanein, A

    2012-02-01

    We investigated the effects of laser excitation wavelength on water-window emission lines of laser-produced boron-nitride plasmas. Plasmas are produced by focusing 1064 nm and harmonically generated 532 and 266 nm radiation from a Nd:YAG laser on BN target in vacuum. Soft x-ray emission lines in the water-window region are recorded using a grazing-incidence spectrograph. Filtered photodiodes are used to obtain complementary data for water-window emission intensity and angular dependence. Spectral emission intensity changes in nitrogen Ly-α and He-α are used to show how laser wavelength affects emission. Our results show that the relative intensity of spectral lines is laser wavelength dependent, with the ratio of Ly-α to He-α emission intensity decreasing as laser wavelength is shortened. Filtered photodiode measurements of angular dependence showed that 266 and 532 nm laser wavelengths produce uniform emission.

  15. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

    CERN Document Server

    Gao, Yuanda; Gan, Xuetao; Li, Luozhou; Peng, Cheng; Meric, Inanc; Wang, Lei; Szep, Attila; Walker, Dennis; Hone, James; Englund, Dirk

    2014-01-01

    Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modul...

  16. All-angle negative refraction of highly squeezed plasmon and phonon polaritons in graphene-boron nitride heterostructures

    CERN Document Server

    Lin, Xiao; Rivera, Nicholas; Lopez, Josue J; Shen, Yichen; Kaminer, Ido; Chen, Hongsheng; Joannopoulos, John D; Soljacic, Marin

    2016-01-01

    A fundamental building block for nanophotonics is the ability to achieve negative refraction of polaritons, because this could enable the demonstration of many unique nanoscale applications such as deep-subwavelength imaging, superlens, and novel guiding. However, to achieve negative refraction of highly squeezed polaritons, such as plasmon polaritons in graphene and phonon polaritons in boron nitride (BN) with their wavelengths squeezed by a factor over 100, requires the ability to flip the sign of their group velocity at will, which is challenging. Here we reveal that the strong coupling between plasmon and phonon polaritons in graphene-BN heterostructures can be used to flip the sign of the group velocity of the resulting hybrid (plasmon-phonon-polariton) modes. We predict all-angle negative refraction between plasmon and phonon polaritons, and even more surprisingly, between hybrid graphene plasmons, and between hybrid phonon polaritons. Graphene-BN heterostructures thus provide a versatile platform for t...

  17. Single-step synthesis of crystalline h-BN quantum- and nanodots embedded in boron carbon nitride films

    Science.gov (United States)

    Matsoso, Boitumelo J.; Ranganathan, Kamalakannan; Mutuma, Bridget K.; Lerotholi, Tsenolo; Jones, Glenn; Coville, Neil J.

    2017-03-01

    Herein we report on the synthesis and characterization of novel crystalline hexagonal boron nitride (h-BN) quantum- and nanodots embedded in large-area boron carbon nitride (BCN) films. The films were grown on a Cu substrate by an atmospheric pressure chemical vapour deposition technique. Methane, ammonia, and boric acid were used as precursors for C, N and B to grow these few atomic layer thick uniform films. We observed that both the size of the h-BN quantum/nanodots and thickness of the BCN films were influenced by the vaporization temperature of boric acid as well as the H3BO3 (g) flux over the Cu substrate. These growth conditions were easily achieved by changing the position of the solid boric acid in the reactor with respect to the Cu substrate. Atomic force microscope (AFM) and TEM analyses show a variation in the h-BN dot size distribution, ranging from nanodots (∼224 nm) to quantum dots (∼11 nm) as the B-source is placed further away from the Cu foil. The distance between the B-source and the Cu foil gave an increase in the C atomic composition (42 at% C–65 at% C) and a decrease in both B and N contents (18 at% B and 14 at% N to 8 at% B and 7 at% N). UV–vis absorption spectra showed a higher band gap energy for the quantum dots (5.90 eV) in comparison with the nanodots (5.68 eV) due to a quantum confinement effect. The results indicated that the position of the B-source and its reaction with ammonia plays a significant role in controlling the nucleation of the h-BN quantum- and nanodots. The films are proposed to be used in solar cells. A mechanism to explain the growth of h-BN quantum/nanodots in BCN films is reported.

  18. Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls

    Energy Technology Data Exchange (ETDEWEB)

    Sankaran, K.J.; Hoang, D.Q.; Drijkoningen, S.; Pobedinskas, P.; Haenen, K. [Institute for Materials Research (IMO), Hasselt University, Diepenbeek (Belgium); IMOMEC, IMEC vzw, Diepenbeek (Belgium); Srinivasu, K.; Leou, K.C. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu (China); Korneychuk, S.; Turner, S.; Verbeeck, J. [Electron Microscopy for Materials Science (EMAT), University of Antwerp (Belgium); Lin, I.N. [Department of Physics, Tamkang University, Tamsui (China)

    2016-10-15

    Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3 V μm{sup -1}, attaining FEE current density of 2.58 mA cm{sup -2} and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction

    Science.gov (United States)

    Sun, Qiao; Sun, Caixia; Du, Aijun; Dou, Shixue; Li, Zhen

    2016-07-01

    Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs.Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03288e

  20. Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant

    Science.gov (United States)

    Funahashi, Kazuma; Tanaka, Naoki; Shoji, Yoshiaki; Imazu, Naoki; Nakayama, Ko; Kanahashi, Kaito; Shirae, Hiroyuki; Noda, Suguru; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

    2017-03-01

    Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphenyl group) can serve as an efficient hole-doping reagent to produce nanotubes with markedly high stability in the presence of air and moisture. Upon doping, the resistances of the nanotubes decreased, and these states were maintained for one month in air. The hole-doped nanotube films showed a minimal increase in resistance even upon humidification with a relative humidity of 90%.

  1. PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

    Directory of Open Access Journals (Sweden)

    Natalita M. Nursam

    2010-01-01

    Full Text Available The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-SiN:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45 GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge density. Our results show that the application of negative charge causes a substantial reduction in the surface recombination of samples with boron diffused emitters, even for high boron surface concentrations of 5×1019 cm−3. The significant difference observed in surface recombination between boron diffused and undiffused sample under accumulation implies that the presence of boron diffusion has results in some degradation of the Si-SiN interface. Further, (111 oriented surfaces appear more sensitive to the boron surface concentration than (100 oriented surfaces.

  2. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects on h-BN, which act as strong trapping sites for Cu atoms and inhibit their clustering. The strong binding of Cu atoms at boron vacancy also up-shifts the energy level of Cu-d states to the Fermi level and promotes the formation of peroxide-like intermediate. CO oxidation over Cu atoms embedded in h-BN would proceed through the Langmuir-Hinshelwood mechanism with the formation of a peroxide-like complex by reaction of coadsorbed CO and O2, with the dissociation of which the a CO2 molecule and an adsorbed O atom are formed. Then, the embedded Cu atom is regenerated by the reaction of another gaseous CO with the remnant O atom. The calculated energy barriers for the formation and dissociation of peroxide complex and regeneration of embedded Cu atoms are as low as 0.26, 0.11 and 0.03 eV, respectively, indicating the potential high catalytic performance of Cu atoms embedded in h-BN for low temperature CO oxidation. © the Partner Organisations 2014.

  3. Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

    Science.gov (United States)

    Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

    2013-03-01

    Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

  4. Mathematical modelling for nanotube bundle oscillators

    Science.gov (United States)

    Thamwattana, Ngamta; Cox, Barry J.; Hill, James M.

    2009-07-01

    This paper investigates the mechanics of a gigahertz oscillator comprising a nanotube oscillating within the centre of a uniform concentric ring or bundle of nanotubes. The study is also extended to the oscillation of a fullerene inside a nanotube bundle. In particular, certain fullerene-nanotube bundle oscillators are studied, namely C60-carbon nanotube bundle, C60-boron nitride nanotube bundle, B36N36-carbon nanotube bundle and B36N36-boron nitride nanotube bundle. Using the Lennard-Jones potential and the continuum approach, we obtain a relation between the bundle radius and the radii of the nanotubes forming the bundle, as well as the optimum bundle size which gives rise to the maximum oscillatory frequency for both the fullerene and the nanotube bundle oscillators. While previous studies in this area have been undertaken through molecular dynamics simulations, this paper emphasizes the use of applied mathematical modelling techniques which provides considerable insight into the underlying mechanisms. The paper presents a synopsis of the major results derived in detail by the present authors in [1, 2].

  5. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  6. First-principles study of palladium atom adsorption on the boron- or nitrogen-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Guoxiang [College of Physics and Information Technology, Shaanxi Normal University, Xi' an 710062, Shaanxi (China); School of Science, Xi' an Shiyou University, Xi' an 710065, Shaanxi (China); Zhang Jianmin, E-mail: jianm_zhang@yahoo.co [College of Physics and Information Technology, Shaanxi Normal University, Xi' an 710062, Shaanxi (China); Wang Doudou [Institute of Telecommunication Engineering of the Air Force Engineering University (AFEU1), Xi' an 710077, Shaanxi (China); Xu Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049, Shaanxi (China)

    2009-11-15

    We have performed first-principles calculation to investigate the adsorption of a single palladium atom on the surface of the pristine and boron- or nitrogen-doped carbon nanotubes (CNTs). The results show that for the adsorption of a single palladium atom on the pristine CNT surface, the most stable site is Bridge1 site above the axial carbon-carbon bond. Either boron- or nitrogen-doped CNTs can assist palladium surface adsorption, but the detailed mechanisms are different. The enhanced palladium adsorption on boron-doped CNT is attributed to the palladium d orbital strongly hybridized with both boron p orbital and carbon p orbital. The enhancement in palladium adsorption on nitrogen-doped CNT results from activating the nitrogen-neighboring carbon atoms due to the large electron affinity of nitrogen. Furthermore, the axial bond is preferred over the zigzag bond for a palladium atom adsorbed on the surface of all three types of CNTs. The most energetically favorable site for a palladium atom adsorbed on three types of CNTs is above the axial boron-carbon bond in boron-doped CNT. The enhancement in palladium adsorption is more significant for the boron-doped CNT than it is for nitrogen-doped CNT with a similar configuration. So we conclude that accordingly, the preferred adsorption site is determined by the competition between the electron affinity of doped and adsorbed atoms and preferred degree of the axial bond over the zigzag bond.

  7. Fabrication of a Carbon Nanotube-Embedded Silicon Nitride Membrane for Studies of Nanometer-Scale Mass Transport

    Energy Technology Data Exchange (ETDEWEB)

    Holt, J K; Noy, A; Huser, T; Eaglesham, D; Bakajin, O

    2004-08-25

    A membrane consisting of multiwall carbon nanotubes embedded in a silicon nitride matrix was fabricated for fluid mechanics studies on the nanometer scale. Characterization by tracer diffusion and scanning electron microscopy suggests that the membrane is free of large voids. An upper limit to the diffusive flux of D{sub 2}O of 2.4x10-{sup 8} mole/m{sup 2}-s was determined, indicating extremely slow transport. By contrast, hydrodynamic calculations of water flow across a nanotube membrane of similar specifications predict a much higher molar flux of 1.91 mole/m{sup 2}-s, suggesting that the nanotubes produced possess a 'bamboo' morphology. The carbon nanotube membranes were used to make nanoporous silicon nitride membranes, fabricated by sacrificial removal of the carbon. Nitrogen flow measurements on these structures give a membrane permeance of 4.7x10{sup -4} mole/m{sup 2}-s-Pa at a pore density of 4x10{sup 10} cm{sup -2}. Using a Knudsen diffusion model, the average pore size of this membrane is estimated to be 66 nm, which agrees well with TEM observations of the multiwall carbon nanotube outer diameter. These membranes are a robust platform for the study of confined molecular transport, with applications inseparations and chemical sensing.

  8. A new class of boron nitride fibers with tunable properties by combining an electrospinning process and the polymer-derived ceramics route

    Science.gov (United States)

    Salles, Vincent; Bernard, Samuel; Brioude, Arnaud; Cornu, David; Miele, Philippe

    2010-02-01

    Novel boron nitride (BN) fibers have been developed with diameters ranging from the nano- to microscale by thermal conversion of as-electrospun fibers from polyacrylonitrile and poly[B-(methylamino)borazine] blend solutions. Such a new class of ceramic fibers is seen as potential candidate for thermal management applications and filtration systems in harsh environments.Novel boron nitride (BN) fibers have been developed with diameters ranging from the nano- to microscale by thermal conversion of as-electrospun fibers from polyacrylonitrile and poly[B-(methylamino)borazine] blend solutions. Such a new class of ceramic fibers is seen as potential candidate for thermal management applications and filtration systems in harsh environments. Electronic supplementary information (ESI) available: Experimental details and EDX results. See DOI: 10.1039/b9nr00185a

  9. Evaluation of Aromatic Boronic Acids as Ligands for Measuring Diabetes Markers on Carbon Nanotube Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Steingrimur Stefansson

    2012-01-01

    Full Text Available Biomolecular detections performed on carbon nanotube field-effect transistors (CNT-FETs frequently use reactive pyrenes as an anchor to tether bioactive ligands to the hydrophobic nanotubes. In this paper, we explore the possibility of directly using bioactive aromatic compounds themselves as CNT-FET ligands. This would be an efficient way to functionalize CNT-FETs since many aromatic compounds bind avidly to nanotubes, and it would also ensure that ligand-binding molecules would be brought in close proximity to the nanotubes. Using a model system consisting of pyrene, phenanthrene, naphthalene, or phenyl boronic acids immobilized on CNT-FET wafers, we show that all are able to bind glycated human serum albumin (gHSA, which is an important diabetes marker. Pyrene boronic acid proved to bind CNTs with the greatest apparent affinity as measured by gHSA impedance. Interestingly, gHSA CNT-FET signal intensity, which is proportional to amount of protein bound, remained essentially unchanged for all the boronic acids tested.

  10. An intensified π-hole in beryllium-doped boron nitride meshes: its determinant role in CO2 conversion into hydrocarbon fuels.

    Science.gov (United States)

    Azofra, Luis Miguel; MacFarlane, Douglas R; Sun, Chenghua

    2016-02-28

    DFT investigations on beryllium-doped boron nitride meshes or sheets (BNs) predict the existence of a very reactive kind of novel material capable of spontaneously reducing the first hydrogenation step in the CO2 conversion mechanism. This impressive behaviour appears as a result of the very deep π-hole generated by the beryllium moieties, and also determines its selectivity towards the production of CH4.

  11. A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

    Science.gov (United States)

    Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

    2013-05-21

    Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.

  12. Growth and characterization of BCN nanotubes with high boron and nitrogen content

    Indian Academy of Sciences (India)

    Guo Zhang; Zhiye Liu; Lianping Zhang; Liqiang Jing; Keying Shi

    2013-09-01

    Multiwalled carbon nanotubes doped with boron and nitrogen (BCNTs) have been synthesized by chemical vapour deposition at temperatures ranging from 800°C to 950°C. Their morphological and structural features have been studied by transmission electron microscope, which reveal that BCNTs have bamboo-like structure. The results of X-ray photoelectron spectroscopy demonstrated that the atomic ratio of B, C and N of BCNTs is about 1:4:1, when temperature is 850°C. Electrooxidation performance of the BCNTs for NO at the modified electrodes was investigated. The results of cyclic voltammograms and the electrochemical impedance spectroscopy of BCNT-modified electrodes indicated that the activity of NO electrooxidation on 850°C-modified electrodes is much stronger than others and the charge transfer resistance of NO electroxidation BCNT-modified electrode is the least. By this means, BCNT-modified electrodes showed excellent electrode materials for NO detection and other potential applications.

  13. Friction of water on graphene and hexagonal boron nitride from ab initio methods: very different slippage despite very similar interface structures.

    Science.gov (United States)

    Tocci, Gabriele; Joly, Laurent; Michaelides, Angelos

    2014-12-10

    Friction is one of the main sources of dissipation at liquid water/solid interfaces. Despite recent progress, a detailed understanding of water/solid friction in connection with the structure and energetics of the solid surface is lacking. Here, we show for the first time that ab initio molecular dynamics can be used to unravel the connection between the structure of nanoscale water and friction for liquid water in contact with graphene and with hexagonal boron nitride. We find that although the interface presents a very similar structure between the two sheets, the friction coefficient on boron nitride is ≈ 3 times larger than that on graphene. This comes about because of the greater corrugation of the energy landscape on boron nitride arising from specific electronic structure effects. We discuss how a subtle dependence of the friction on the atomistic details of a surface, which is not related to its wetting properties, may have a significant impact on the transport of water at the nanoscale, with implications for the development of membranes for desalination and for osmotic power harvesting.

  14. Preparation and visible-light-driven photoelectrocatalytic properties of boron-doped TiO{sub 2} nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Su Yaling; Han Song; Zhang Xingwang; Chen Xiuqin [Institute of Environmental Pollution Control Technologies, Xixi Campus, Zhejiang University, Hangzhou 310028 (China); Lei Lecheng [Institute of Environmental Pollution Control Technologies, Xixi Campus, Zhejiang University, Hangzhou 310028 (China)], E-mail: lclei@zju.edu.cn

    2008-08-15

    In the present study, chemical vapour deposition (CVD) was applied to dope boron into TiO{sub 2} nanotubes anodized Ti in C{sub 2}H{sub 2}O{sub 4}.2H{sub 2}O + NH{sub 4}F electrolyte with the goal of improving the photocatalytic (PC) activity under visible light. The undoped TiO{sub 2} nanotubes had a highly self-organized structure. However, after doping through CVD, TiO{sub 2} nanotubes suffered from an observable disintegration of morphological integrity. X-ray diffraction (XRD) results confirmed that annealing temperature had an influence on the phase structure and boron impurities could retard anatase-rutile phase transition. Diffuse reflectance absorption spectra (DRS) analysis indicated that B-doped samples displayed stronger absorption in both UV and visible range. B-doped TiO{sub 2} nanotubes electrode annealed at 700 deg. C through CVD showed higher photoelectrocatalytic (PEC) efficiency in methyl orange (MO) degradation than that annealed at 400 deg. C and 550 deg. C. MO degradation was substantially enhanced with the increasing applied bias potential. Moreover, there was a synergetic effect between the electrochemical and photocatalytic processes, and the synergetic factor R reached 1.45. B-doped TiO{sub 2} nanotubes electrode showed good stability after 10 times by repeating photoelectrocatalysis of MO.

  15. Polyethyleneimine-functionalized boron nitride nanospheres as efficient carriers for enhancing the immunostimulatory effect of CpG oligodeoxynucleotides

    Directory of Open Access Journals (Sweden)

    Zhang HJ

    2015-08-01

    Full Text Available Huijie Zhang,1 Shini Feng,1 Ting Yan,1 Chunyi Zhi,2 Xiao-Dong Gao,1 Nobutaka Hanagata3,41The Key Laboratory of Carbohydrate Chemistry and Biotechnology, Ministry of Education, School of Biotechnology, Jiangnan University, Wuxi, People’s Republic of China; 2Department of Physics and Materials Science, City University of Hong Kong, Kowlong, Hong Kong SAR, People’s Republic of China; 3Biomaterials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, Japan; 4Nanotechnology Innovation Station, National Institute for Materials Science, Ibaraki, JapanAbstract: CpG oligodeoxynucleotides (ODNs stimulate innate and adaptive immune responses. Thus, these molecules are promising therapeutic agents and vaccine adjuvants against various diseases. In this study, we developed a novel CpG ODNs delivery system based on polyethyleneimine (PEI-functionalized boron nitride nanospheres (BNNS. PEI was coated on the surface of BNNS via electrostatic interactions. The prepared BNNS–PEI complexes had positive zeta potential and exhibited enhanced dispersity and stability in aqueous solution. In vitro cytotoxicity assays revealed that the BNNS–PEI complexes with concentrations up to 100 µg/mL exhibited no obvious cytotoxicity. Furthermore, the positively charged surface of the BNNS–PEI complexes greatly improved the loading capacity and cellular uptake efficiency of CpG ODNs. Class B CpG ODNs loaded on the BNNS–PEI complexes enhanced the production of interleukin-6 and tumor necrosis factor-α from peripheral blood mononuclear cells compared with CpG ODNs directly loaded on BNNS. Contrary to the free CpG ODNs or CpG ODNs directly loaded on BNNS, class B CpG ODNs loaded on the BNNS–PEI complexes induced interferon-α simultaneously. PEI coating may have changed the physical form of class B CpG ODNs on BNNS, which further affected their interaction with Toll-like receptor 9 and induced interferon

  16. Alkylamine-functionalized hexagonal boron nitride nanoplatelets as a novel material for the reduction of friction and wear.

    Science.gov (United States)

    Kumari, Sangita; Sharma, Om P; Khatri, Om P

    2016-08-17

    Hexagonal boron nitride nanoplatelets (h-BNNPs), which are structurally analogous to graphene, were prepared via the ultrasound-assisted exfoliation of h-BN powder using N-methyl pyrrolidone as the solvent. The alkylamines with variable alkyl chains and electron-rich nitrogen atoms were grafted onto the boron sites of the h-BNNPs based on Lewis acid-base chemistry. The grafting of the alkylamines onto the h-BNNPs was confirmed using FTIR, XPS, TGA and (13)C SSNMR analyses. The crystalline and structural features of the alkylamine-functionalized h-BNNPs were studied using XRD and HRTEM analyses. The TGA and FTIR results revealed a higher grafting of octadecylamine (ODA) on the h-BNNPs compared to trioctylamine (TOA). The cohesive interaction between the alkyl chains grafted onto the h-BNNPs and the hydrocarbon chains of mineral lube base oil facilitates the dispersion of the alkylamine-functionalized h-BNNPs. The TOA-grafted h-BNNPs (h-BNNPs-TOA) exhibited long-term dispersion stability compared to the ODA-grafted h-BNNPs and this was attributed to a higher degree of van der Waals interactions between the octyl chains of the TOA molecules grafted onto the h-BNNPs and the hydrocarbon chains of the mineral lube base oil. The tribo-performance of the h-BNNPs-TOA as an additive to mineral lube base oil was evaluated in terms of the coefficient of friction and wear using ball-on-disc contact geometry. A minute dosing (0.02 mg mL(-1)) of h-BNNPs-TOA significantly improved the lubrication characteristics of the mineral lube base oil and showed a 35 and 25% reduction of friction and wear, respectively. The presence of boron and nitrogen on the worn scar of an aluminium disc, as deduced from elemental mapping, confirmed the formation of a tribo-chemical thin film of h-BN lamellae on the contact interfaces, which not only reduced the friction but also protected the contact interfaces against undesirable wear events.

  17. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: greber@physik.uzh.ch [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)

    2014-03-15

    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

  18. Negative Refraction with Superior Transmission in Graphene-Hexagonal Boron Nitride (hBN) Multilayer Hyper Crystal

    Science.gov (United States)

    Sayem, Ayed Al; Rahman, Md. Masudur; Mahdy, M. R. C.; Jahangir, Ifat; Rahman, Md. Saifur

    2016-05-01

    In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal) to demonstrate all angle negative refraction along with superior transmission. hBN, one of the latest natural hyperbolic materials, can be a very strong contender to form a hyper crystal with graphene due to its excellence as a graphene-compatible substrate. Although bare hBN can exhibit negative refraction, the transmission is generally low due to its high reflectivity. Whereas due to graphene’s 2D nature and metallic characteristics in the frequency range where hBN behaves as a type-I hyperbolic material, we have found graphene-hBN hyper-crystals to exhibit all angle negative refraction with superior transmission. Interestingly, superior transmission from the whole structure can be fully controlled by the tunability of graphene without hampering the negative refraction originated mainly from hBN. We have also presented an effective medium description of the hyper crystal in the low-k limit and validated the proposed theory analytically and with full wave simulations. Along with the current extensive research on hybridization of graphene plasmon polaritons with (hyperbolic) hBN phonon polaritons, this work might have some substantial impact on this field of research and can be very useful in applications such as hyper-lensing.

  19. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.

    Science.gov (United States)

    Wofford, Joseph M; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J Lopes, J Marcelo

    2017-02-27

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

  20. Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride

    Science.gov (United States)

    Wang, Eryin; Lu, Xiaobo; Ding, Shijie; Yao, Wei; Yan, Mingzhe; Wan, Guoliang; Deng, Ke; Wang, Shuopei; Chen, Guorui; Ma, Liguo; Jung, Jeil; Fedorov, Alexei V.; Zhang, Yuanbo; Zhang, Guangyu; Zhou, Shuyun

    2016-12-01

    Graphene/hexagonal boron nitride (h-BN) has emerged as a model van der Waals heterostructure as the superlattice potential, which is induced by lattice mismatch and crystal orientation, gives rise to various novel quantum phenomena, such as the self-similar Hofstadter butterfly states. Although the newly generated second-generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, fundamental knowledge of SDCs, such as locations and dispersion, and the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report direct experimental results on the dispersion of SDCs in 0°-aligned graphene/h-BN heterostructures using angle-resolved photoemission spectroscopy. Our data unambiguously reveal SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of approximately 100 meV and approximately 160 meV are observed at the SDCs and the original graphene Dirac cone, respectively. Our work highlights the important role of a strong inversion-symmetry-breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.

  1. Rapid Synthesis of Sub-5 nm Sized Cubic Boron Nitride Nanocrystals with High-Piezoelectric Behavior via Electrochemical Shock.

    Science.gov (United States)

    Chen, Zhigang; Li, Lianhui; Cong, Shan; Xuan, Jinnan; Zhang, Dengsong; Geng, Fengxia; Zhang, Ting; Zhao, Zhigang

    2017-01-11

    A key challenge in current superhard materials research is the design of novel superhard nanocrystals (NCs) whereby new and unexpected properties may be predicted. Cubic boron nitride (c-BN) is a superhard material which ranks next to diamond; however, downsizing c-BN material below the 10 nm scale is rather challenging, and the interesting new properties of c-BN NCs remain unexplored and wide open. Herein we report an electrochemical shock method to prepare uniform c-BN NCs with a lateral size of only 3.4 ± 0.6 nm and a thickness of only 0.74 ± 0.3 nm at ambient temperature and pressure. The fabrication process is simple and fast, with c-BN NCs produced in just a few minutes. Most interestingly, the NCs exhibit excellent piezoelectric performance with a large recordable piezoelectric coefficient of 25.7 pC/N, which is almost 6 times larger than that from bulk c-BN and even competitive to conventional piezoelectric materials. The phenomenon of enhancement in the piezoelectric properties of BN NCs might arise from the nanoscale surface effect and nanoscale shape effect of BN NCs. This work paves an interesting route for exploring new properties of superhard NCs.

  2. Graphene-Analogues Boron Nitride Nanosheets Confining Ionic Liquids: A High-Performance Quasi-Liquid Solid Electrolyte.

    Science.gov (United States)

    Li, Mingtao; Zhu, Wenshuai; Zhang, Pengfei; Chao, Yanhong; He, Qian; Yang, Bolun; Li, Huaming; Borisevich, Albinab; Dai, Sheng

    2016-07-01

    Solid electrolytes are one of the most promising electrolyte systems for safe lithium batteries, but the low ionic conductivity of these electrolytes seriously hinders the development of efficient lithium batteries. Here, a novel class of graphene-analogues boron nitride (g-BN) nanosheets confining an ultrahigh concentration of ionic liquids (ILs) in an interlayer and out-of-layer chamber to give rise to a quasi-liquid solid electrolyte (QLSE) is reported. The electron-insulated g-BN nanosheet host with a large specific surface area can confine ILs as much as 10 times of the host's weight to afford high ionic conductivity (3.85 × 10(-3) S cm(-1) at 25 °C, even 2.32 × 10(-4) S cm(-1) at -20 °C), which is close to that of the corresponding bulk IL electrolytes. The high ionic conductivity of QLSE is attributed to the enormous absorption for ILs and the confining effect of g-BN to form the ordered lithium ion transport channels in an interlayer and out-of-layer of g-BN. Furthermore, the electrolyte displays outstanding electrochemical properties and battery performance. In principle, this work enables a wider tunability, further opening up a new field for the fabrication of the next-generation QLSE based on layered nanomaterials in energy conversion devices.

  3. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    Science.gov (United States)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  4. Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device.

    Science.gov (United States)

    Saha, Sanjit; Jana, Milan; Khanra, Partha; Samanta, Pranab; Koo, Hyeyoung; Murmu, Naresh Chandra; Kuila, Tapas

    2015-07-08

    Nanostructured hexagonal boron nitride (h-BN)/reduced graphene oxide (RGO) composite is prepared by insertion of h-BN into the graphene oxide through hydrothermal reaction. Formation of the super lattice is confirmed by the existence of two separate UV-visible absorption edges corresponding to two different band gaps. The composite materials show enhanced electrical conductivity as compared to the bulk h-BN. A high specific capacitance of ∼824 F g(-1) is achieved at a current density of 4 A g(-1) for the composite in three-electrode electrochemical measurement. The potential window of the composite electrode lies in the range from -0.1 to 0.5 V in 6 M aqueous KOH electrolyte. The operating voltage is increased to 1.4 V in asymmetric supercapacitor (ASC) device where the thermally reduced graphene oxide is used as the negative electrode and the h-BN/RGO composite as the positive electrode. The ASC exhibits a specific capacitance of 145.7 F g(-1) at a current density of 6 A g(-1) and high energy density of 39.6 W h kg(-1) corresponding to a large power density of ∼4200 W kg(-1). Therefore, a facile hydrothermal route is demonstrated for the first time to utilize h-BN-based composite materials as energy storage electrode materials for supercapacitor applications.

  5. Performance analysis of boron nitride embedded armchair graphene nanoribbon metal-oxide-semiconductor field effect transistor with Stone Wales defects

    Science.gov (United States)

    Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu

    2014-01-01

    We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width ˜5 nm, the simulated ON current is found to be in the range of 265 μA-280 μA with an ON/OFF ratio 7.1 × 106-7.4 × 106 for a VDD = 0.68 V corresponding to 10 nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%.

  6. Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects

    Energy Technology Data Exchange (ETDEWEB)

    Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu [Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560 012 (India)

    2014-01-21

    We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width ∼5 nm, the simulated ON current is found to be in the range of 265 μA–280 μA with an ON/OFF ratio 7.1 × 10{sup 6}–7.4 × 10{sup 6} for a V{sub DD} = 0.68 V corresponding to 10 nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%.

  7. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Science.gov (United States)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai; Zhang, Zuoguang

    2017-04-01

    Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 1020 atoms/cm2 were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  8. Ice-Templated Assembly Strategy to Construct 3D Boron Nitride Nanosheet Networks in Polymer Composites for Thermal Conductivity Improvement.

    Science.gov (United States)

    Zeng, Xiaoliang; Yao, Yimin; Gong, Zhengyu; Wang, Fangfang; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2015-12-01

    Owing to the growing heat removal issue of modern electronic devices, polymer composites with high thermal conductivity have drawn much attention in the past few years. However, a traditional method to enhance the thermal conductivity of the polymers by addition of inorganic fillers usually creates composite with not only limited thermal conductivity but also other detrimental effects due to large amount of fillers required. Here, novel polymer composites are reported by first constructing 3D boron nitride nanosheets (3D-BNNS) network using ice-templated approach and then infiltrating them with epoxy matrix. The obtained polymer composites exhibit a high thermal conductivity (2.85 W m(-1) K(-1)), a low thermal expansion coefficient (24-32 ppm K(-1)), and an increased glass transition temperature (T(g)) at relatively low BNNSs loading (9.29 vol%). These results demonstrate that this approach opens a new avenue for design and preparation of polymer composites with high thermal conductivity. The polymer composites are potentially useful in advanced electronic packaging techniques, namely, thermal interface materials, underfill materials, molding compounds, and organic substrates.

  9. Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a chiral boundary

    CERN Document Server

    Liu, Mengxi; Chen, Pengcheng; Sun, Jingyu; Ma, Donglin; Gao, Teng; Gao, Yabo; Li, Qiucheng; Cheng, Zhihai; Qiu, Xiaohui; Fang, Ying; Zhang, Yanfeng; Liu, Zhongfan

    2014-01-01

    Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time synthesis of a nearly freestanding h-BNC hybrid on a weakly coupled substrate of Ir (111), where graphene and h-BN possessing different surface heights and corrugations formed a perfect monolayer hybrid. With the aid of scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrated that h-BN can patch alongside the boundary of pre-deposited graphene domains and vice versa to form a seamless monolayer hybrid, with the realization of predominant zigzag type chiral boundaries at the interface. Density-functional theory calculations and STM/STS measurements aided us to reveal that this interface between graphene and h-BN were atomically sharp in aspects of the chemical bonding as well as the local electronic property from both theoretical and experimental points of view...

  10. High thermally conductive and electrically insulating 2D boron nitride nanosheet for efficient heat dissipation of high-power transistors

    Science.gov (United States)

    Lin, Ziyuan; Liu, Chunru; Chai, Yang

    2016-12-01

    High-power transistors suffer greatly from inefficient heat dissipation of the hotspots, which elevate the local temperature and significantly degrade the performance and reliability of the high-power devices. Although various thermal management methods at package-level have been demonstrated, the heat dissipation from non-uniform hotspots at micro/nanoscale still persist in the high power transistors. Here, we develop a method for local thermal management using thermally conductive and electrical insulating few-layer hexagonal boron nitride (h-BN) as heat spreaders and thick counterpart as heat sinks. The electrically insulating characteristic of h-BN nanosheet allows it to be intimately contacted with the hotspot region that is located at the gate electrode edge near the drain side of a high-electron-mobility transistor (HEMT). The high thermal conductivity of h-BN nanosheet, which is quantitatively measured by Raman thermography, reduces the temperature of the hotspot by introducing an additional heat transporting pathway. Our DC and radio-frequency characterizations of the HEMT show the improvement of saturation current, cut-off frequency and maximum oscillation frequency. The finite element simulations show a temperature decrease of ∼32 °C at the hotspot with the use of h-BN nanosheet. This method can be further extended for the micro/nanoscale thermal management of other high-power devices.

  11. Hexagonal boron nitride nanosheets as adsorbents for solid-phase extraction of polychlorinated biphenyls from water samples.

    Science.gov (United States)

    Jia, Shiliang; Wang, Zhenhua; Ding, Ning; Elaine Wong, Y-L; Chen, Xiangfeng; Qiu, Guangyu; Dominic Chan, T-W

    2016-09-14

    The adsorptive potential of hexagonal boron nitride nanosheets (h-BNNSs) for solid-phase extraction (SPE) of pollutants was investigated for the first time. Seven indicators of polychlorinated biphenyls (PCBs) were selected as target analytes. The adsorption of PCBs on the surface of the h-BNNSs in water was simulated by the density functional theory and molecular dynamics. The simulation results indicated that the PCBs are adsorbed on the surface by π-π, hydrophobic, and electrostatic interactions. The PCBs were extracted with an h-BNNS-packed SPE cartridge, and eluted by dichloromethane. Gas chromatography-tandem mass spectrometry working in the multiple reaction monitor mode was used for the sample quantification. The effect of extraction parameters, including the flow rate, pH value, breakthrough volume, and the ionic strength, were investigated. Under the optimal working conditions, the developed method showed low limits of detection (0.24-0.50 ng L(-1); signal-to-noise ratio = 3:1), low limits of quantification (0.79-1.56 ng L(-1); signal-to-noise ratio = 10:1), satisfactory linearity (r > 0.99) within the concentration range of 2-1000 ng L(-1), and good precision (relative standard deviation results demonstrate that h-BNNSs have high analytical potential in the enrichment of pollutants.

  12. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ULTRAFINE WC/Co CEMENTED CARBIDES WITH CUBIC BORON NITRIDE AND Cr₃C₂ ADDITIONS

    Directory of Open Access Journals (Sweden)

    Genrong Zhang

    2016-03-01

    Full Text Available This study investigates the microstructure and mechanical properties of ultrafine tungsten carbide and cobalt (WC/Co cemented carbides with cubic boron nitride (CBN and chromium carbide (Cr₃C₂ fabricated by a hot pressing sintering process. This study uses samples with 8 wt% Co content and 7.5 vol% CBN content, and with different Cr₃C₂ content ranging from 0 to 0.30 wt%. Based on the experimental results, Cr₃C₂ content has a significant influence on inhibiting abnormal grain growth and decreasing grain size in cemented carbides. Near-full densification is possible when CBN-WC/Co with 0.25 wt% Cr₃C₂ is sintered at 1350°C and 20 MPa; the resulting material possesses optimal mechanical properties and density, with an acceptable Vickers hardness of 19.20 GPa, fracture toughness of 8.47 MPa.m1/2 and flexural strength of 564 MPa.u̇ Å k⃗

  13. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  14. A first-principles study of lithium-decorated hybrid boron nitride and graphene domains for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Zi-Yu [College of Science, Beijing University of Chemical Technology, Beijing 100029 (China); Beijing Computational Science Research Center, Beijing 100084 (China); Shao, Xiaohong, E-mail: shaoxh@mail.buct.edu.cn, E-mail: limin.liu@csrc.ac.cn [College of Science, Beijing University of Chemical Technology, Beijing 100029 (China); Wang, Da; Liu, Li-Min, E-mail: shaoxh@mail.buct.edu.cn, E-mail: limin.liu@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100084 (China); Johnson, J. Karl [Departments of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States)

    2014-08-28

    First-principles calculations are performed to investigate the adsorption of hydrogen onto Li-decorated hybrid boron nitride and graphene domains of (BN){sub x}C{sub 1−x} complexes with x = 1, 0.25, 0.5, 0.75, 0, and B{sub 0.125}C{sub 0.875}. The most stable adsorption sites for the nth hydrogen molecule in the lithium-decorated (BN){sub x}C{sub 1−x} complexes are systematically discussed. The most stable adsorption sites were affected by the charge localization, and the hydrogen molecules were favorably located above the C-C bonds beside the Li atom. The results show that the nitrogen atoms in the substrate planes could increase the hybridization between the 2p orbitals of Li and the orbitals of H{sub 2}. The results revealed that the (BN){sub x}C{sub 1−x} complexes not only have good thermal stability but they also exhibit a high hydrogen storage of 8.7% because of their dehydrogenation ability.

  15. Production and characterization of a novel carbon nanotube/titanium nitride nanocomposite

    Science.gov (United States)

    Baddour, Carole Emilie; Das, Kaushik; Vengallatore, Srikar; Meunier, Jean-Luc

    2016-12-01

    A novel titanium nitride (TiN)/carbon nanotube (CNT) nanocomposite is produced with the purpose to mechanically, structurally and chemically stabilize a ‘felt-like’ CNT growth structure. The CNTs are grown on stainless steel (SS) 304 by chemical vapor deposition using the direct growth method previously developed, which does not require the use of an additional catalyst precursor. The TiN coating is achieved by physical vapor deposition and is shown here to generate a nanocomposite with a porous three-dimensional architecture. The contact stiffness is evaluated using nanoindentation, and wetting properties of the TiN/CNT nanocomposites are determined from contact angle measurements. An increase in contact stiffness and effective elastic modulus with TiN coating time was observed. The TiN coating on the non-wetting CNT felt results in a wetting nanocomposite surface. The wetting property is found to be a function of the TiN coating thickness on the CNT structure.

  16. Magnetism of single-walled silicon carbide nanotubes doped by boron, nitrogen and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Maghnaoui, Ahmed [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria); Boufelfel, Ahmed, E-mail: ahboufelfel@gmail.com [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria)

    2012-09-15

    We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X{sub Si}, or the carbon atom X{sub C}, in the unit cell. We found that in the case of one atom B - SiCNT replacing a carbon atom position annotated by B{sub C} exhibits a magnetic moment of 1 {mu}{sub B}/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B{sub Si}), induce a magnetic moment of 0.46 {mu}{sub B}/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N{sub C}) and (N{sub Si}) each case induce a magnetic moment of 1 {mu}{sub B}/cell in armchair (6,6), while N{sub Si} give rise to 0.75 {mu}{sub B}/cell in zigzag (10,0) and no magnetic moment for N{sub C}. In contrast the case of O{sub C} and O{sub Si} did not produce any net magnetic moment in both zigzag and armchair geometries. - Highlights: Black-Right-Pointing-Pointer Calculation scheme the one implemented in the SIESTA. Black-Right-Pointing-Pointer Materials studied SiCNT, B - SiCNT, N - SiCNT and O - SiCNT. Black-Right-Pointing-Pointer Magnetism in single wall SiCNTs when one atom of C or Si is replaced by B or N zigzag (10,0) and armchair (6,6).

  17. Synthesis of L-cystine nanotubes by alkalinization of L-cysteine in the presence of gallium nitride

    Science.gov (United States)

    Arizaga, Gregorio Guadalupe Carbajal

    2013-12-01

    The alkaline oxidation of L-cysteine (L-Cys) was conducted in aqueous media forming the insoluble L-cystine dimer as confirmed by X-ray diffraction. In another experiment, a gallium nitride film was added to the L-Cys solution and the L-cystine crystals presented a preferential growth. The transmission electron microscopy images showed the formation of single- and multi-wall L-cystine nanotubes. The infrared and high resolution electron microscopy data suggested that the growth of the tubes resulted from the successive staking of L-cystine dimers onto the (0 0 1) family of planes, which was a consequence of the ionic assembly between L-cystine over a layer of L-Cys molecules previously grafted to the gallium nitride particles.

  18. Enhanced capacitance of composite TiO2 nanotube/boron-doped diamond electrodes studied by impedance spectroscopy.

    Science.gov (United States)

    Siuzdak, K; Bogdanowicz, R; Sawczak, M; Sobaszek, M

    2015-01-14

    We report on novel composite nanostructures based on boron-doped diamond thin films grown on top of TiO2 nanotubes. The nanostructures made of BDD-modified titania nanotubes showed an increase in activity and performance when used as electrodes in electrochemical environments. The BDD thin films (∼200-500 nm) were deposited using microwave plasma assisted chemical vapor deposition (MW PA CVD) onto anodically fabricated TiO2 nanotube arrays. The influence of boron-doping level, methane admixture and growth time on the performance of the Ti/TiO2/BDD electrode was studied in detail. Scanning electron microscopy (SEM) was applied to investigate the surface morphology and grain size distribution. Moreover, the chemical composition of TiO2/BDD electrodes was investigated by means of micro-Raman spectroscopy. The composite electrodes TiO2/BDD are characterized by a significantly higher capacitive current compared to BDD films deposited directly onto a Ti substrate. The novel composite electrode of TiO2 nanotube arrays overgrown by boron-doped diamond (BDD) immersed in 0.1 M NaNO3 can deliver a specific capacitance of 2.10, 4.79, and 7.46 mF cm(-2) at a scan rate of 10 mV s(-1) for a [B]/[C] ratio of 2k, 5k and 10k, respectively. The substantial improvement of electrochemical performance and the excellent rate capability could be attributed to the synergistic effect of TiO2 treatment in CH4 : H2 plasma and the high electrical conductivity of BDD layers. The analysis of electrochemical impedance spectra using an electric equivalent circuit allowed us to determine the surface area on the basis of the value of constant phase element.

  19. Boron nitrides synthesized directly from the elements at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nicol, M.; Yoo, C.S.; Akella, J.; Cynn, H.

    1996-11-01

    We use angle-resolved synchrotron x-ray diffraction, laser sample heating, and diamond-anvil cells to follow in-situ chemical reactions directly between elemental boron and nitrogen. The structures of the solid reaction products vary with pressure. Below 10 GPa, hexagonal BN is the product; cubic or wurzite BN form at higher pressures. Under nitrogen-rich conditions, another hexagonal allotrope occurs which seems to be a new highly transparent, low density h`-BN. No direct reactions occur at ambient temperature even at pressures as high as 50 GPa, implying that a large activation barrier limits the kinetics of these exothermic processes. Laser heating overcomes the large kinetic activation barrier and initiates spontaneous, self-sustaining exothermic reactions even at moderate pressures.

  20. Improvements of stress controllability and radiation resistance by adding carbon to boron-nitride

    Energy Technology Data Exchange (ETDEWEB)

    Nakaishi, M.; Sugishima, K. (Fujitsu Limited, Advanced Technology Div., Nakahara-ku, Kawasaki 211 (JP)); Yamada, M. (Stanford Electronics Lab., Stanford Univ., Stanford, CA (US))

    1990-07-01

    The addition of an atom having different bonding radii to a matrix film is an effective method for changing the stress of the film. In a plasma-enhanced CVD of BN, it is difficult to obtain tensile stress except for extremely boron-rich films. The controllability of tensile stress in BN film was improved by introducing a small amount of carbon into the BN matrix, using plasma-enhanced CVD between 400{degrees} and 500{degrees}C. The authors have obtained transparent films with high Young's modulus and tensile stress. They report that the radiation resistance of BNC deposited at 400{degrees}C was improved five times better than that of BN deposited by low-pressure CVD at similar temperatures.