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Sample records for boron ions

  1. Trapping and Sympathetic Cooling of Boron Ions

    CERN Document Server

    Rugango, Rene; Shu, Gang; Brown, Kenneth R

    2016-01-01

    We demonstrate the trapping and sympathetic cooling of B$^{+}$ ions in a Coulomb crystal of laser-cooled Ca$^{+}$, We non-destructively confirm the presence of the both B$^+$ isotopes by resonant excitation of the secular motion. The B$^{+}$ ions are loaded by ablation of boron and the secular excitation spectrum also reveals features consistent with ions of the form B$_{n}^{+}$.

  2. Boron Separation by the Two-step Ion-Exchange for the Isotopic Measurement of Boron

    Institute of Scientific and Technical Information of China (English)

    WANG,Qing-Zhong(王庆忠); XIAO,Ying-Kai(肖应凯); WANG,Yun-Hui(王蕴惠); ZHANG,Chong-Geng(张崇耿); WEI,Hai-Zhen(魏海珍)

    2002-01-01

    An improved procedure for extraction and purification of boron from natural samples is presented. The separation and purification of boron was carried out using a boron-specific resin, Amberlite IRA743, and a mixed ion exchange resin,Dowex 50W × 8 and Ion Exchanger Ⅱ resin. Using the mixed ion exchange resin which adsorbs all cations and anions except boron, the HCl and other cations and anions left in eluant from the Amberlite IRA 743 were removed effectively. In this case, boron loss can be avoided because the boron-bearing solution does not have to be evaporated to reach dryness to dislodge HCl. The boron recovery ranged from 97.6% to 102% in this study. The isotopic fractionation of boron can be negligible within the precision of the isotopic measurement. The results show that boron separation for the isotopic measurement by using both Amberlite IRA 743 resin and the mixed rein is more effective than that using Amberlite IRA 743 resin alone. The boron in samples of brine, seawater, rock, coral and foraminifer were separated by this procedure. Boron isotopic compositions of these samples were measured by thermal ionization mass spectrometry in this study.

  3. Ion implantation of boron in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K.S.

    1985-05-01

    Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.

  4. Determination of boron in silicates after ion exchange separation

    Science.gov (United States)

    Kramer, H.

    1955-01-01

    Existing methods for the determination of boron in silicates are not entirely satisfactory. Separation as the methyl ester is lengthy and frequently erratic. An accurate and rapid method applicable to glass, mineral, ore, and water samples uses ion exchange to remove interfering cations, and boron is determined titrimetrically in the presence of mannitol, using a pH meter to indicate the end point.

  5. Investigations on the characterization of ion implanted hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2013-07-01

    The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 × 1014-1 × 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

  6. Measuring the sensitivity of a boron-lined ion chamber

    International Nuclear Information System (INIS)

    Boron-lined ion chambers are used to monitor external neutron flux from fissionable materials assembled at the Los Alamos Critical Assembly Experiment Facility. The sensitivity of these chambers must be measured periodically in order to detect changes in filling gas and to evaluate other factors that may affect chamber performance. We delineate a procedure to measure ion chamber response using a particular neutron source (239PuBe) in a particular moderating geometry of polyethylene. We also discuss use of the amplifier, high-voltage power supply, recorders, and scram circuits that comprise the complete ion chamber monitoring system

  7. Determination of Boron Trifluoride in Boron Trifluoride Complex by Fluoride Ion Selective Electrode

    Institute of Scientific and Technical Information of China (English)

    郎五可; 张卫江; 唐银; 徐姣; 张雷

    2016-01-01

    A method was proposed to determine boron trifluoride in boron trifluoride complex using fluoride ion selective electrode(ISE). Hydroxide was chosen to mask aluminum for the determination of 0.01—0.1 mol/L of fluoride. The simulation indicated that the permissible aluminum masked at a certain pH value was limited and hardly related to F-concentration and boric acid. It is better to control pH value below 11.5 and the aluminum con-centration within 0.025 mol/L to minimize the interference of hydroxide to the fluoride ISE. The decomposition conditions of boron trifluoride by aluminum chloride were investigated. It is found that the F-detection ratio will approach 1.0 if the Al/F molar ratio is 0.3—0.7 and aluminum concentration is no more than 0.02 mol/L when heated at 80℃ for 10 min. In one word, hydroxide is quite fit to mask aluminum for samples which contain high content of fluoride and aluminum and the BF3 content can be successfully determined by this method.

  8. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  9. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Yilmaz, M. Tolga [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Chemical Engineering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)

    2005-01-31

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions.

  10. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    Science.gov (United States)

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  11. Preparation and characterization of sputtered boron nitride and boron carbide films and their modification by ion implantation

    International Nuclear Information System (INIS)

    Nanocrystalline cubic boron nitride and boron carbide films have been synthesized using sputtering. The relationship between the structures and properties as well as the influence of the deposition parameters, such as rf power, bias voltage, substrate temperature, composition and flow rate of the sputtering gas, on the structures and properties have been studied. The influence of the ion bombardment could be described by the specific ion momentum P*=[ion momentum.(ion flux/atom flux)]. The specific ion momentum was found to be proportional to the rf power and to the 1.5th power of the bias voltage. Two phases have been identified in our boron nitride films: hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN); the films were either single phase or contained a mixture of these two phases. Nanocrystalline boron films have been grown with a deposition rate of 2 nm/s not only on Si but also on hard metal (WC-6%Co) substrates. Stoichiometric and crystalline films have already been grown at room temperature (about 0.1 Tm, Tm=melting point-3900 K). All the films contained about 8 at% carbon and 6 at% oxygen as impurities, which come mainly from the targt. The concentration of the impurities is independent of the deposition paramters. The growth of c-BN appears after the specific ion momentum larger than a threshold value, which is dependent on the substrate temperature, composition and on the flow rate of the sputtering gas. The volume content of c-BN runs through a maximum value with increasing specific ion momentum. (orig.)

  12. Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

    International Nuclear Information System (INIS)

    Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%

  13. Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaev, A. G.; Vizir, A. V.; Yushkov, G. Yu., E-mail: gyushkov@mail.ru; Frolova, V. P. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055 (Russian Federation); Oks, E. M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055 (Russian Federation); Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation)

    2016-02-15

    Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

  14. Ion Exchange Extraction of Boron from Aqueous Fluids by Amberlite IRA 743 Resin

    Institute of Scientific and Technical Information of China (English)

    肖应凯; 廖步勇; 刘卫国; 肖云; SWIHART,GeorgeH.

    2003-01-01

    The ion exchange characteristics d Amherlite IRA 743 resin for extracting boron from aqueous fluids have been investigated in detail. The results show that AmherHte IRA 743 resin, a boron specific ion exchange resin, can quantitatively extract boron as the B (OH)4- spedes from weakly basle solution. Some exchangeable anions such as CI- and SO42- are present, resulting in an increase in pH value of the loeded solution within the nan, and the boron in natural aqueous fluids with low nH is also extracted by Amberlite IRA 743 resin. However, the voiume of loaded solution must be restricted. The maximum voiume of loaded solution giving quantitative extraction of boron decreases for sample soh.,tiom of lower pH value. Warm HCI solution is more effective than room temperature HCI solution for eluting boron from Amberllte IRA 743 resin.

  15. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  16. Amorphisation of boron carbide under slow heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Moncoffre, N.

    2016-08-01

    Boron carbide B4C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B4C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10-2 displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  17. Subcellular boron and fluorine distributions with SIMS ion microscopy in BNCT and cancer research

    Energy Technology Data Exchange (ETDEWEB)

    Subhash Chandra

    2008-05-30

    The development of a secondary ion mass spectrometry (SIMS) based technique of Ion Microscopy in boron neutron capture therapy (BNCT) was the main goal of this project, so that one can study the subcellular location of boron-10 atoms and their partitioning between the normal and cancerous tissue. This information is fundamental for the screening of boronated drugs appropriate for neutron capture therapy of cancer. Our studies at Cornell concentrated mainly on studies of glioblastoma multiforme (GBM). The early years of the grant were dedicated to the development of cryogenic methods and correlative microscopic approaches so that a reliable subcellular analysis of boron-10 atoms can be made with SIMS. In later years SIMS was applied to animal models and human tissues of GBM for studying the efficacy of potential boronated agents in BNCT. Under this grant the SIMS program at Cornell attained a new level of excellence and collaborative SIMS studies were published with leading BNCT researchers in the U.S.

  18. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  19. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Songfoo [S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor (Malaysia); You, Ahheng [Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka (Malaysia); Tou, Teckyong, E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya (Malaysia)

    2013-03-20

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (D{sub eff}) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cu{sub I}{sup +}) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O{sub 2}{sup +} ions. The Cu{sub I}{sup +} ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu{sub I}{sup +} ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different D{sub eff} values, and compared with other measurement techniques.

  20. Isotopic Composition of Boron Secondary Ions as a Function of Ion-Beam Fluence.

    Science.gov (United States)

    Baumel, Laurie Michelle

    The experiment performed in this work isolates and examines the effects of mass on the composition of the sputtered flux from a multi-component target. Chemical complexities are minimized by measuring sputtered ions from a target consisting only of two isotopes of one element. In this case, chemical effects as well as inter-atomic potentials are assumed to be identical for all constituents moving within the target, thus simplifying the target kinematics. Since any non-stoichiometry in the sputtered material should be caused only by the effects of mass on the kinetics in the target, measuring the sputtered material and comparing various analytical predictions with the experimental results leads to a better understanding of mass effects in these targets. 100-keV argon and neon were used to sputter an elemental target comprising the two naturally occurring isotopes of boron. The resulting secondary ions were examined with an electrostatic quadrupole mass analyzer. At low beam fluences (~1 times 20^{15} ions/cm ^2) a light-isotope secondary ion enhancement is observed relative to the steady-state secondary ion yields collected at higher beam fluences ( ~5 times 10 ^{17} ions/cm^2 ). The steady-state ion yields are representative of the bulk composition of the target. The enhancement (46.1perthous for Ne^+ irradiation and 51.8perthous for Ar^+ irradiation) is large compared to the predictions of analytical theories and is determined to be independent of variations in surface potential, chemical effects, and surface impurities. This effect is consistent with an explanation based on an energy and momentum asymmetry in the collision cascade. The asymmetry was caused by an extra collision mechanism which allowed light particles to backscatter 180^circ (towards the target surface) from underlying heavier target particles whereas the reverse process can not occur. When irradiated with projectiles heavier than the target constituents, the heavier target particles had a higher

  1. Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

    OpenAIRE

    Velichko, O. I.; Hundorina, A. A.; Axenov, V. V.

    2011-01-01

    It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^{\\circ}C due to migration of the nonequilibrium boron interstitials.

  2. Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

    Energy Technology Data Exchange (ETDEWEB)

    Tetelbaum, D.I.; Mikhaylov, A.N.; Belov, A.I.; Korolev, D.S.; Shushunov, A.N.; Bobrov, A.I.; Pavlov, D.A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Shek, E.I.; Sobolev, N.A. [Ioffe Physical Technical Institute, St. Petersburg (Russian Federation)

    2015-01-01

    The depth distribution of light-emitting centers of the D1 dislocation-related photoluminescence line (∝ 1.5 μm) in silicon implanted with Si{sup +} ions and annealed at 1100 C in the oxidizing chlorine-containing atmosphere has been investigated by means of the layer-by-layer chemical etching. It is established with the application of cross-sectional transmission electron microscopy that the main contribution to the D1 line is made by the centers located at the depths of up to ∝ 150 nm, i.e. in the region of Si{sup +} ion ranges, whereas the dislocations produced by Si{sup +} implantation and annealing at 1100 C penetrate to the depth of ∝ 1000 nm. Additional boron ion doping with subsequent annealing at 800 C in N{sub 2} atmosphere improves the emission in comparison with the undoped but annealed reference sample, however the additional annealing at 800 C per se results in the photoluminescence weakening. The dependence of the D1 line intensity on boron ion dose is found to be nonmonotonous. The interpretation of the obtained results is given in relation to the key role of selfinterstitials and boron impurity in the formation of radiative and nonradiative centers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Resonant transfer excitation followed by X-ray for boron-like ions

    OpenAIRE

    RAMADAN, Hassan

    2011-01-01

    Theoretical cross sections for resonant transfer excitation followed by x-ray emission (RTEX) are calculated for the collisions of some ions in the series of the Boron-like ions with H2 as a target. The calculations have been done for C II, N III, O IV, F V, Ar XIV and Fe XXII ions by folding their dielectronic recombination (DR) cross sections over the momentum distribution (Compton profile) of H2 target gas. Calculations have been performed from both ground and metastable initial st...

  4. Evidence of amorphisation of B4C boron carbide under slow, heavy ion irradiation

    Science.gov (United States)

    Gosset, D.; Miro, S.; Doriot, S.; Victor, G.; Motte, V.

    2015-12-01

    Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (1014/cm2, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 1015/cm2 then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B6Si,…).

  5. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  6. MCDHF Calculations and Beam-Foil EUV Spectra of Boron-Like Sodium Ions (Na VII)

    OpenAIRE

    Per Jönsson; Jörgen Ekman; Elmar Träbert

    2015-01-01

    Atomic data, such as wavelengths and line identifications, are necessary for many applications, especially in plasma diagnostics and for interpreting the spectra of distant astrophysical objects. The number of valence shell electrons increases the complexity of the computational problem. We have selected a five-electron ion, Na6+ (with the boron-like spectrum Na VII), for looking into the interplay of measurement and calculation. We summarize the available experimental work, perform our own e...

  7. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  8. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  9. Lamb shift in muonic ions of lithium, beryllium and boron

    CERN Document Server

    Krutov, A A; Martynenko, F A; Sukhorukova, O S

    2016-01-01

    We present a precise calculation of the Lamb shift $(2P_{1/2}-2S_{1/2})$ in muonic ions $(\\mu ^6_3Li)^{2+},~(\\mu ^7_3Li)^{2+}$, $(\\mu ^9_4Be)^{3+},~(\\mu ^{10}_4Be)^{3+}$, $(\\mu ^{10}_5B)^{4+},~(\\mu ^{11}_5B)^{4+}$. The contributions of orders $\\alpha^3\\div\\alpha^6$ to the vacuum polarization, nuclear structure and recoil, relativistic effects are taken into account. Our numerical results are consistent with previous calculations and improve them due to account of new corrections. The obtained results can be used for the comparison with future experimental data, and extraction more accurate values of nuclear charge radii.

  10. Improving low-energy boron/nitrogen ion implantation in graphene by ion bombardment at oblique angles

    Science.gov (United States)

    Bai, Zhitong; Zhang, Lin; Liu, Ling

    2016-04-01

    Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically analyzing the effects of the incident angle and ion energy in determining the probabilities of six distinct types of physics that may occur in an ion bombardment event, including reflection, absorption, substitution, single vacancy, double vacancy, and transmission. By analyzing the atomic trajectories from 576 000 simulations, we identified three single vacancy creation mechanisms and four double vacancy creation mechanisms, and quantified their probability distributions in the angle-energy space. These findings further open the door for improved control of ion implantation towards a wide range of applications of graphene.Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically

  11. Structural modifications induced by ion irradiation and temperature in boron carbide B4C

    Science.gov (United States)

    Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

    2015-12-01

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

  12. Feasibility study of Boron Nitride coating on Lithium-ion battery casing

    International Nuclear Information System (INIS)

    Increasing in public awareness about global warming and exhaustion of energy resources has led to a flourishing electric vehicle industry that would help realize a zero-emission society. The thermal management of battery packs, which is an essential issue closely linked to a number of challenges for electric vehicles including cost, safety, reliability and lifetime, has been extensively studied. However, relatively little is known about the thermal effect of polymer insulation on the Lithium-ion battery casing. This study investigates the feasibility of replacing the polymer insulation with a Boron Nitride coating on the battery casing using the Taguchi experimental method. The effect of casing surface roughness, coating thickness and their interaction were examined using orthogonal array L9 (34). Nominal the best is chosen for the optimization process to achieve optimum adhesion strength. In addition, the thermal improvements of the coating as compared to conventional polymer insulator on the battery are further investigated. - Highlights: • We studied the Boron Nitride coating on battery casing using Taguchi method. • We investigated the effect of surface roughness and coating thickness on adhesion strength. • We compared the effect of coating and polymer insulator in heat transfer. • The Boron Nitride coating could enhance the thermal management of the battery

  13. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  14. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Science.gov (United States)

    Derbouz, K.; Michel, T.; De Moro, F.; Spiegel, Y.; Torregrosa, F.; Belouet, C.; Slaoui, A.

    2013-09-01

    In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD) or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  15. Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Billing, D. G.; Wamwangi, D.; Motochi, I.; Derry, T. E.

    2014-07-01

    The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm-1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm.

  16. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  17. New boron based salts for lithium-ion batteries using conjugated ligands.

    Science.gov (United States)

    Jankowski, P; Wieczorek, W; Johansson, P

    2016-06-28

    A new anion design concept, based on combining a boron atom as the central atom and conjugated systems as ligands, is presented as a route for finding alternative Li-salts for lithium-ion batteries. The properties of a wide range of novel anions designed in this way have been evaluated by DFT calculations focusing on three different fundamental success factors/measures: the strength of the cation-anion interaction, ultimately determining both the solubility and the ionic conductivity, the oxidation limit, determining their possible use vs. high voltage cathodes, and the reduction stability, revealing a possible role of the anion in the SEI-formation at the anode. For a few anions superior properties vs. today's existing or suggested anions are predicted, especially the very low cation-anion interaction strengths are promising features. The design route itself is shown to be versatile in determining the correlation between different choices of ligands and the resulting overall properties - where the most striking feature is the decreased lithium cation interaction energy upon using the (1Z,3Z)-buta-1,3-diene-1,2,3,4-tetracarbonitrile ligands. This also opens avenues for the further design of novel anions beyond those with a boron central atom. PMID:27253752

  18. MCDHF Calculations and Beam-Foil EUV Spectra of Boron-Like Sodium Ions (Na VII

    Directory of Open Access Journals (Sweden)

    Per Jönsson

    2015-06-01

    Full Text Available Atomic data, such as wavelengths and line identifications, are necessary for many applications, especially in plasma diagnostics and for interpreting the spectra of distant astrophysical objects. The number of valence shell electrons increases the complexity of the computational problem. We have selected a five-electron ion, Na6+ (with the boron-like spectrum Na VII, for looking into the interplay of measurement and calculation. We summarize the available experimental work, perform our own extensive relativistic configuration interaction (RCI computations based on multi-configuration Dirac–Hartree–Fock (MCDHF wave functions, and compare the results to what is known of the level structure. We then discuss problems with databases that have begun to combine observations and computations.

  19. Improved Edge Confinement due to Ion Cyclotron Radio Frequency boronization in the HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    徐国盛; 万宝年; 宋梅; 凌必利

    2003-01-01

    The phenomena of improved edge confinement due to ion cyclotron radio frequency boronization were observed with a fast reciprocating Langmuir probe in the HT-7 tokamak. A strong shear layer of radial electric field was produced in the plasma edge region, which resulted in the formation of an edge transport barrier. Consequently,the edge profiles of electron density were steepened, and both the absolute and relative fluctuation levels were suppressed by the shearing E × B flows. Concomitant reduction of the coherence between electron density and poloidal electric field fluctuations and the change of their cross-phase resulted in turbulent particle flux dropping by more than a half at the plasma edge. This demonstrates the de-correlation effect of turbulence and its contribution to edge transport. The results presented here suggest a link between wall conditions and boundary plasma physics, especially an interaction between atomic processes and turbulence through the formation of radial electric field shear at the plasma edge.

  20. Determination of degradation constants of energetic 7*Li ion in liquid media using a thin boron film on silicon wafer

    International Nuclear Information System (INIS)

    A novel method to determine degradation constants has been developed for energetic 7*Li ions produced from the 10B (n, α) 7*Li reaction, moving in liquid media. The energetic 7*Li generated in a thin boron film on silicon wafer plunged into a liquid sample in which the wafer was immersed. The degradation constants were determined by analyzing the Doppler-broadened lineshapes of prompt γ-ray at 478 keV emitted from 7*Li. For comparison, degradation constants were also measured for solutions of boron compounds. Values obtained by the two methods gave fair agreement. (author)

  1. Nitrenium ions and trivalent boron ligands as analogues of N-heterocyclic carbenes in olefin metathesis: a computational study.

    Science.gov (United States)

    Pazio, A; Woźniak, K; Grela, K; Trzaskowski, B

    2015-12-14

    We used the density functional theory to evaluate the suitability of nitrenium ions and trivalent boron ligands as analogues of N-heterocyclic carbenes in ruthenium-based metathesis catalysts. We demonstrate that these analogues induce only minor structural changes in Hoveyda-Grubbs-like precatalysts, but have major impact on precatalyst initiation. Nitrenium ion-modified precatalysts are characterized by a weak Ru-N bond resulting in a relatively strong Ru-O bond and large free energy barriers for initiation, making them good candidates for efficient latent Ru-based catalysts. On the other hand the trivalent boron ligand, bearing a formal -1 charge, binds strongly to the ruthenium ion, weakening the Ru-O bond and facilitating its dissociation, to promote fast reaction initiation. We show that the calculated bond dissociation energy of the Ru-C/N/B bond may serve as an accurate indicator of the Ru-O bond strength and the rate of metathesis initiation.

  2. An atom probe field ion microscope investigation of the role of boron in precipitates and at grain boundaries in NiAl

    International Nuclear Information System (INIS)

    This paper reports that the high resolution analytical technique of Atom Probe Field Ion Microscopy (APFIM) has been used to characterize grain boundaries and the matrix of a stoichiometric NiAl alloy doped with 0.04 (100 wppm) and 0.12 at. % (300 wppm) boron. Field ion images revealed boron segregation to the grain boundaries. Atom probe elemental analysis of the grain boundaries measured a boron coverage of up to 30% of a monolayer. Extensive atom probe analyses also revealed a fine dispersion of nanoscale boride precipitates in the matrix. The boron segregation to the grain boundaries was found to correlate with the observed suppression of intergranular fracture. However, the decrease in ductility of boron-doped NiAl is attributed in part to the precipitation hardening effect of the boride phases

  3. Quantitative evaluation of boron neutron capture therapy (BNCT) drugs for boron delivery and retention at subcellular scale resolution in human glioblastoma cells with imaging secondary ion mass spectrometry (SIMS)

    Science.gov (United States)

    Chandra, S.; Ahmad, T.; Barth, R. F.; Kabalka, G. W.

    2014-01-01

    Boron neutron capture therapy (BNCT) of cancer depends on the selective delivery of a sufficient number of boron-10 (10B) atoms to individual tumor cells. Cell killing results from the 10B (n, α)7Li neutron capture and fission reactions that occur if a sufficient number of 10B atoms are localized in the tumor cells. Intranuclear 10B localization enhances the efficiency of cell killing via damage to the DNA. The net cellular content of 10B atoms reflects both bound and free pools of boron in individual tumor cells. The assessment of these pools, delivered by a boron delivery agent, currently cannot be made at subcellular scale resolution by clinically applicable techniques such as PET and MRI. In this study, secondary ion mass spectrometry (SIMS) based imaging instrument, a CAMECA IMS 3f ion microscope, capable of 500 nm spatial resolution was employed. Cryogenically prepared cultured human T98G glioblastoma cells were evaluated for boron uptake and retention of two delivery agents. The first, L-p-boronophenylalanine (BPA), has been used clinically for BNCT of high grade gliomas, recurrent tumors of the head and neck region and melanomas. The second, a boron analogue of an unnatural amino acid, 1-amino-3-borono-cyclopentanecarboxylic acid (cis-ABCPC), has been studied in rodent glioma and melanoma models by quantification of boron in the nucleus and cytoplasm of individual tumor cells. The bound and free pools of boron were assessed by exposure of cells to boron-free nutrient medium. Both BPA and cis-ABCPC delivered almost 70% of the pool of boron in the free or loosely bound form to the nucleus and cytoplasm of human glioblastoma cells. This free pool of boron could be easily mobilized out of the cell and was in some sort of equilibrium with extracellular boron. In the case of BPA, the intracellular free pool of boron also was affected by the presence of phenylalanine in the nutrient medium. This suggests that it might be advantageous if patients were placed on a

  4. Tuning the Colors of the Dark Isomers of Photochromic Boron Compounds with Fluoride Ions: Four-State Color Switching.

    Science.gov (United States)

    Mellerup, Soren K; Rao, Ying-Li; Amarne, Hazem; Wang, Suning

    2016-09-01

    Combining a three-coordinated boron (BMes2) moiety with a four-coordinated photochromic organoboron unit leads to a series of new diboron compounds that undergo four-state reversible color switching in response to stimuli of light, heat, and fluoride ions. Thus, these hybrid diboron systems allow both convenient color tuning/switching of such photochromic systems, as well as visual fluoride sensing by color or fluorescent emission color change. PMID:27534683

  5. Low-energy outer-shell photodetachment of the negative ion of boron

    Science.gov (United States)

    Wang, Kedong; Zatsarinny, Oleg; Bartschat, Klaus

    2016-04-01

    The photodetachment of the negative ion of boron, B-(2s22p2)3P, is investigated by employing the B-spline R-matrixmethod for photon energies ranging from threshold to 12 eV. A multi-configuration Hartree-Fock method with nonorthogonal, term-dependent orbitals is employed to generate accurate initial bound-state and final continuum-state wavefunctions. The close-coupling expansion includes all principal scattering channels for photodetachment from both the 2p and 2s orbitals. The calculated photodetachment cross sections are in good agreement with the available experimental data. Several prominent resonance features are predicted, thereby providing new challenges in the study of this highly correlated process. To classify the resonance structure, both the partial cross sections and the main contributions of the individual scattering channels are discussed. The presented cross sections, along with the asymmetry parameter β for the angular distribution, are believed to be the most comprehensive and accurate dataset currently available for the B- photodetachment process at low energies. Contribution to the Topical Issue "Advances in Positron and Electron Scattering", edited by Paulo Limao-Vieira, Gustavo Garcia, E. Krishnakumar, James Sullivan, Hajime Tanuma and Zoran Petrovic.

  6. Low-energy outer-shell photodetachment of the negative ion of boron.

    Science.gov (United States)

    Wang, Kedong; Zatsarinny, Oleg; Bartschat, Klaus

    2016-05-01

    The photodetachment of the negative ion of boron, B-(2s2 2p2) 3 P , was investigated by employing the B-spline R-matrix method for photon energies ranging from threshold to 12 eV. A multi-configuration Hartree-Fock method with nonorthogonal, term-dependent orbitals was used to generate accurate initial bound-state and final continuum-state wavefunctions. The close-coupling expansion included all principal scattering channels for photodetachment from both the 2p and 2s orbitals. The resulting equation were solved using a parallelized version of the BSR computer code. The calculated photodetachment cross sections are in good agreement with the available experimental data. Several prominent resonance features are predicted, thereby providing new challenges in the study of this highly correlated process. To classify the resonance structure, both the partial cross sections and the main contributions of the individual scattering channels are discussed. Work supported by the China Scholarship Council and the United States National Science Foundation under Grants PHY-1403245 and PHY-1520970, and by the XSEDE allocation PHY-090031.

  7. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  8. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    The impact of 30MeV boron4+ and 60MeV oxygen8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  9. A comparative study of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiated Si NPN BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M. Vinay, E-mail: Vkm288@gmail.com; Krishnaveni, S. [Department of studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Yashoda, T. [Deparment of Physics, AVK College for women, Hassan-573201 (India); Dinesh, C. M. [Department of Physics, Govt. First grade college for women, Chintamani-563125 (India); Krishnakumar, K. S. [Department of Physics, APS College of Engineering (India); Jayashree, B. [Department of Physics, Maharanis Science College for Women, Bangalore-560001 (India); Ramani [Department of Physics, Bangalore University, Jnanabharathi, Bangalore-560056 (India)

    2015-06-24

    The impact of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor.

  10. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    Science.gov (United States)

    Kumar, M. Vinay; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani, Krishnaveni, S.

    2015-06-01

    The impact of 30MeV boron4+ and 60MeV oxygen8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor.

  11. A deep level transient spectroscopic study of boron-ion-implanted Si1-xGex/Si single quantum wells

    International Nuclear Information System (INIS)

    The defects induced by boron-ion implantation with a relatively low dosage of 1x1012 cm-2 in Si1-xGex/Si single quantum wells are studied by deep level transient spectroscopy (DLTS). For low Ge content x, a defect level H2 at an energy of 0.52 eV above the silicon valence band edge was found in the well region and its boundaries. For samples with higher Ge content, such that the strain is released, an electron trap E2 rather than H2 is formed by the ion implantation. Rapid thermal annealing at 600 deg. C removes most of the H2 defects induced by the ion implantation without changing the properties of the quantum well. (author)

  12. Separation of boron from borated paraffin wax by pyrohydrolysis and alkali extraction methods and its determination using ion chromatography.

    Science.gov (United States)

    Raut, Vaibhavi Vishwajeet; Jeyakumar, Subbiah; Shah, Dipti Jayesh; Thakur, Uday Kumar; Tomar, Bhupendra Singh; Ramakumar, Karanam Lakshminarayana

    2015-01-01

    A method based on the pyrohydrolysis extraction of boron and its quantification with ion chromatography was proposed for paraffin waxes borated with H3BO3 and B4C. The optimum pyrohydrolysis conditions were identified. Wax samples were mixed with U3O8, which prevents the sample from flare up, and also accelerates the extraction of boron. Pyrohydrolysis was carried out with moist O2 at 950°C for 60 and 90 min for wax with H3BO3 and wax with B4C, respectively. Two simple methods of separation based on alkali extraction and melting wax in alkali were also developed exclusively for wax with H3BO3. In all the separations, the recovery of B was above 98%. During IC separation, B was separated as boron-mannitol anion complex. Linear calibration was obtained it between 0.1 and 50 ppm of B, and LOD was calculated as 5 ppb (S/N = 3). The reproducibility was better than 5% (RSD). PMID:25765277

  13. Nitrenium ions and trivalent boron ligands as analogues of N-heterocyclic carbenes in olefin metathesis: a computational study.

    Science.gov (United States)

    Pazio, A; Woźniak, K; Grela, K; Trzaskowski, B

    2015-12-14

    We used the density functional theory to evaluate the suitability of nitrenium ions and trivalent boron ligands as analogues of N-heterocyclic carbenes in ruthenium-based metathesis catalysts. We demonstrate that these analogues induce only minor structural changes in Hoveyda-Grubbs-like precatalysts, but have major impact on precatalyst initiation. Nitrenium ion-modified precatalysts are characterized by a weak Ru-N bond resulting in a relatively strong Ru-O bond and large free energy barriers for initiation, making them good candidates for efficient latent Ru-based catalysts. On the other hand the trivalent boron ligand, bearing a formal -1 charge, binds strongly to the ruthenium ion, weakening the Ru-O bond and facilitating its dissociation, to promote fast reaction initiation. We show that the calculated bond dissociation energy of the Ru-C/N/B bond may serve as an accurate indicator of the Ru-O bond strength and the rate of metathesis initiation. PMID:26525899

  14. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  15. K-shell photoionization of boron-like carbon ions: analysis of 1s-2p resonances

    Institute of Scientific and Technical Information of China (English)

    Wang Guo-Li; Zhou Xiao-Xin

    2007-01-01

    Close-coupling calculations based on an R-matrix formalism are performed for the 1s-2p resonance photoionizations from the low-lying states of boron-like carbon ions. The resonance energies, widths and oscillator strengths of 1s-2p core excitations are determined by analysing the calculated photoionization cross sections. Our calculations are in reasonable agreement with the experimental and theoretical results presented by other authors. The present numerical values may help to analyse the astrophysical and laboratory plasmas.

  16. Some Lewis acid-base adducts involving boron trifluoride as electrolyte additives for lithium ion cells

    Science.gov (United States)

    Nie, Mengyun; Madec, L.; Xia, J.; Hall, D. S.; Dahn, J. R.

    2016-10-01

    Three complexes with boron trifluoride (BF3) as the Lewis acid and different Lewis bases were synthesized and used as electrolyte additives in Li[Ni1/3Mn1/3Co1/3]O2/graphite and Li[Ni0.42Mn0.42Co0.16]O2/graphite pouch cells. Lewis acid-base adducts with a boron-oxygen (Bsbnd O) bond were trimethyl phosphate boron trifluoride (TMP-BF) and triphenyl phosphine oxide boron trifluoride (TPPO-BF). These were compared to pyridine boron trifluoride (PBF) which has a boron-nitrogen (Bsbnd N) bond. The experimental results showed that cells with PBF had the least voltage drop during storage at 4.2 V, 4.4 V and 4.7 V at 40 °C and the best capacity retention during long-term cycling at 55 °C compared to cells with the other additives. Charge-hold-discharge cycling combined with simultaneous electrochemical impedance spectroscopy measurements showed that impedance growth in TMP-BF and TPPO-BF containing cells was faster than cells containing 2%PBF, suggesting that PBF is useful for impedance control at high voltages (>4.4 V). XPS analysis of the SEI films highlighted a specific reactivity of the PBF-derived SEI species that apparently hinders the degradation of both LiPF6 and solvent during formation and charge-hold-discharge cycling. The modified SEI films may explain the improved impedance, the smaller voltage drop during storage and the improved capacity retention during cycling of cells containing the PBF additive.

  17. About effect of magnesium chloride and some ions in brines on boron coprecipitation by iron hydroxide

    International Nuclear Information System (INIS)

    Studies were made of conditions of precipitation of boron with iron hydroxide from the brines of the mixing zone of the Kara-Bogaz Gol, the mother liquor after the precipitation of potassium salts and artificial manganese chloride solutions at a temperature of 7-45 dee C. The maximum extraction of boron from the brines investigated is observed both in a weakly acid and a weakly alkaline medium. The extraction intensity increases drastically in the range of the maximum with an increase in brine concentration. The anions Cl-, SO42-, and HCO3- present in the brines produce the maximum effect on boron precipitation at a definite pH. This effect depends on the nature of the anions and their ratio in the brine. With a rise in temperature the degree of boron precipitations from the magnesium chloride brine and the precipitate capacity increase as a result of the release of active magnesium hydroxide. When the ratio of Fe2O3 to 100 ml initial solution changes towards increase in precipitating agent at a constant temperature, the precipitate capacity for B2O3 decreases

  18. Highly Luminescent Microporous Organic Polymer with Lewis Acidic Boron Sites on the Pore Surface: Ratiometric Sensing and Capture of F(-) Ions.

    Science.gov (United States)

    Suresh, Venkata M; Bandyopadhyay, Arkamita; Roy, Syamantak; Pati, Swapan K; Maji, Tapas Kumar

    2015-07-20

    Reversible and selective capture/detection of F(-) ions in water is of the utmost importance, as excess intake leads to adverse effects on human health. Highly robust Lewis acidic luminescent porous organic materials have potential for efficient sequestration and detection of F(-) ions. Herein, the rational design and synthesis of a boron-based, Lewis acidic microporous organic polymer (BMOP) derived from tris(4-bromo-2,3,5,6-tetramethylphenyl)boron nodes and diethynylbiphenyl linkers with a pore size of 1.08 nm for selective turn-on sensing and capture of F(-) ion are reported. The presence of a vacant pπ orbital on the boron center of BMOP results in intramolecular charge transfer (ICT) from the linker to boron. BMOP shows selective turn-on blue emission for F(-) ions in aqueous mixtures with a detection limit of 2.6 μM. Strong B-F interactions facilitate rapid sequestration of F(-) by BMOP. The ICT emission of BMOP can be reversibly regenerated by addition of an excess of water, and the polymer can be reused several times. PMID:26074403

  19. Radiosensitivity of pimonidazole-unlabelled intratumour quiescent cell population to γ-rays, accelerated carbon ion beams and boron neutron capture reaction.

    OpenAIRE

    Masunaga, S; Sakurai, Y.; Tanaka, H.; Hirayama, R; Matsumoto, Y; Uzawa, A; Suzuki, M.; Kondo, N; Narabayashi, M.; Maruhashi, A; Ono, K.

    2013-01-01

    [Objectives] To detect the radiosensitivity of intratumour quiescent (Q) cells unlabelled with pimonidazole to accelerated carbon ion beams and the boron neutron capture reaction (BNCR). [Methods] EL4 tumour-bearing C57BL/J mice received 5-bromo-2′-deoxyuridine (BrdU) continuously to label all intratumour proliferating (P) cells. After the administration of pimonidazole, tumours were irradiated with γ-rays, accelerated carbon ion beams or reactor neutron beams with the prior administration of...

  20. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation; Oberflaechenmodifikation des Hartmetalls Wolframkarbid-Kobalt durch Bor-Ionenimplantation

    Energy Technology Data Exchange (ETDEWEB)

    Mrotchek, I.

    2007-09-07

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and {approx}5.10{sup 17} ions/cm{sup 2} fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co{sub 3}W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load.

  1. Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2015-03-01

    Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

  2. Preparation of diamond-like carbon and boron nitirde films by high-intensity pulsed ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rej, D.J.; Davis, H.A. [Los Alamos National Lab., NM (United States); Remnev, G.E. [Tomsk Polytechnic Univ., Tomsk (Russian Federation). Nuclear Physics Institute.] [and others

    1995-05-01

    Intense ion beams (300-keV C{sup +}, O{sup +}, and H{sup +}, 20--30 kA, 50 to 400-ns pulsewidth, up to 0.3-Hz repetition rate) were used to prepare diamond-like carbon (DLC) and boron nitride (BN) films. Deposition rates of up to 25{plus_minus}5 nm/pulse were obtained with instantaneous rates exceeding 1 mm/s. Most films were uniform, light brown, translucent, and nonporous with some micron-size particulates. Raman and parallel electron energy loss spectroscopy indicated the presence of DLC. The films possessed favorable electron field-emission characteristics desirable for cold-cathode displays. Transmission electron microscopy (TEM) and transmission electron diffraction (TED) revealed that the C films contained diamond crystals with 25 to 125-nm grain size. BN films were composed of hexagonal, cubic and wurtzite phases.

  3. Isotope shifts in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

    Energy Technology Data Exchange (ETDEWEB)

    Nazé, C.; Verdebout, S. [Service de Chimie Quantique et Photophysique, CP160/09, Université Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Brussels (Belgium); Rynkun, P.; Gaigalas, G. [Vilnius University, Institute of Theoretical Physics and Astronomy, LT-01108 Vilnius (Lithuania); Godefroid, M., E-mail: mrgodef@ulb.ac.be [Service de Chimie Quantique et Photophysique, CP160/09, Université Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Brussels (Belgium); Jönsson, P. [Group for Materials Science and Applied Mathematics, Malmö University, 205-06 Malmö (Sweden)

    2014-09-15

    Energy levels, normal and specific mass shift parameters as well as electronic densities at the nucleus are reported for numerous states along the beryllium, boron, carbon, and nitrogen isoelectronic sequences. Combined with nuclear data, these electronic parameters can be used to determine values of level and transition isotope shifts. The calculation of the electronic parameters is done using first-order perturbation theory with relativistic configuration interaction wavefunctions that account for valence, core–valence, and core–core correlation effects as zero-order functions. Results are compared with experimental and other theoretical values, when available.

  4. Toward ambient temperature operation with all-solid-state lithium metal batteries with a sp3 boron-based solid single ion conducting polymer electrolyte

    Science.gov (United States)

    Zhang, Yunfeng; Cai, Weiwei; Rohan, Rupesh; Pan, Meize; Liu, Yuan; Liu, Xupo; Li, Cuicui; Sun, Yubao; Cheng, Hansong

    2016-02-01

    The ionic conductivity decay problem of poly(ethylene oxide) (PEO)-based solid polymer electrolytes (SPEs) when increase the lithium salt of the SPEs up to high concentration is here functionally overcome by the incorporation of a charge delocalized sp3 boron based single ion conducting polymer electrolyte (SIPE) with poly(ethylene oxide) to fabricate solid-state sp3 boron based SIPE membranes (S-BSMs). By characterizations, particularly differential scanning calorimeter (DSC) and ionic conductivity studies, the fabricated S-BSMs showed decreased melting points and increased ionic conductivity as steadily increase the content of sp3 boron based SIPE, which significantly improved the low temperature performance of the all-solid-state lithium batteries. The fabricated Li | S-BSMs | LiFePO4 cells exhibit highly electrochemical stability and excellent cycling at temperature below melting point of PEO, which has never been reported so far for SIPEs based all-solid-state lithium batteries.

  5. Development of high intensity ion sources for a Tandem-Electrostatic-Quadrupole facility for Accelerator-Based Boron Neutron Capture Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Bergueiro, J. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [CONICET, Buenos Aires (Argentina); Igarzabal, M.; Suarez Sandin, J.C. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina); Somacal, H.R. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [Escuela de Ciencia y Tecnologia, Universidad Nacional de San Martin (Argentina); Thatar Vento, V. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [CONICET, Buenos Aires (Argentina); Huck, H.; Valda, A.A. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [Escuela de Ciencia y Tecnologia, Universidad Nacional de San Martin (Argentina); Repetto, M. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)

    2011-12-15

    Several ion sources have been developed and an ion source test stand has been mounted for the first stage of a Tandem-Electrostatic-Quadrupole facility For Accelerator-Based Boron Neutron Capture Therapy. A first source, designed, fabricated and tested is a dual chamber, filament driven and magnetically compressed volume plasma proton ion source. A 4 mA beam has been accelerated and transported into the suppressed Faraday cup. Extensive simulations of the sources have been performed using both 2D and 3D self-consistent codes.

  6. A novel fluorescent probe for zinc ion based on boron dipyrromethene (BODIPY) chromophore.

    Science.gov (United States)

    Koutaka, Hitomi; Kosuge, Jun-ichi; Fukasaku, Noboru; Hirano, Tomoya; Kikuchi, Kazuya; Urano, Yasuteru; Kojima, Hirotatsu; Nagano, Tetsuo

    2004-06-01

    ZnAB has the combined structure of N,N-bis(2-pyridylmethyl)ethylenediamine as a specific chelater for Zn(2+) and 1,3,5,7-tetramethyl-8-phenyl-boron dipyrromethene as a fluorophore. Complexation of ZnAB with Zn(2+) produces a remarkable enhancement of fluorescence intensity. ZnAB has the advantages of less sensitivity to solvent polarity and pH than fluorescein-based Zn(2+) probes. Furthermore, it is not influenced by other cations, such as Na(+), K(+), Ca(2+), and Mg(2+), which exist at high concentrations under physiological conditions, even at 2.5 mM. The results show that ZnAB is a Zn(2+) probe suitable for biological applications.

  7. Boron ion beam production with the supernanogan ECR ion source for the CERN BIO-LEIR facility

    CERN Document Server

    Stafford-Haworth, J; Scrivens, R; Toivanen, V; Röhrich, J

    2014-01-01

    To deliver B3+ ions for medical research the compounds decaborane and m-carborane were tested using the metal ions from volatile compounds (MIVOC) method with the Supernanogan 14.5 GHz ECR ion source. Using decaborane the source delivered less than 10 A intensity of B3+ and after operation large deposits of material were found inside the source. Using m-carborane 50 A of B3+ were delivered without support gas. For m-carborane, helium and oxygen support gasses were also tested, and the effects of different source tuning parameters are discussed. The average consumption of m-carborane was 0:1 mg/Ah over all operation.

  8. Absolute rate coefficients for photorecombination of beryllium-like and boron-like silicon ions

    Science.gov (United States)

    Bernhardt, D.; Becker, A.; Brandau, C.; Grieser, M.; Hahn, M.; Krantz, C.; Lestinsky, M.; Novotný, O.; Repnow, R.; Savin, D. W.; Spruck, K.; Wolf, A.; Müller, A.; Schippers, S.

    2016-04-01

    We report measured rate coefficients for electron-ion recombination of Si10+ forming Si9+ and of Si9+ forming Si8+, respectively. The measurements were performed using the electron-ion merged-beams technique at a heavy-ion storage ring. Electron-ion collision energies ranged from 0 to 50 eV for Si9+ and from 0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ (Orban et al 2010 Astrophys. J. 721 1603) to much higher energies. Experimentally derived rate coefficients for the recombination of Si9+ and Si10+ ions in a plasma are presented along with simple parameterizations. These rate coefficients are useful for the modeling of the charge balance of silicon in photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas (Si10+ only). In the corresponding temperature ranges, the experimentally derived rate coefficients agree with the latest corresponding theoretical results within the experimental uncertainties.

  9. Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus- and boron-codoped Si nanocrystals

    Science.gov (United States)

    Nakamura, Toshihiro; Adachi, Sadao; Fujii, Minoru; Sugimoto, Hiroshi; Miura, Kenta; Yamamoto, Shunya

    2015-04-01

    We investigate the nanocrystallite-size and dopant-concentration dependence of the photoluminescence (PL) properties of heavily phosphorus- (P) and boron- (B) codoped Si nanocrystals (Si NCs), prepared using a combination of sputtering and ion implantation techniques. We find that the heavily doped Si NC exhibits three exotic luminescence bands, A, B, and C. The peak energy of band A redshifts with increasing dopant concentration. This band is due to the band-to-band transition at the reduced Si-NC band gap caused by the formation of impurity bands together with band-tailing effects. The PL redshift becomes large when the nanocrystallite size decreases, suggesting the occurrence of the quantum-confinement-induced carrier doping effect. The peak energies of bands B and C are independent of both the concentration and size, indicating that these bands are due to transitions between defect- and/or impurity-related localized states. Band A shows stronger thermal quenching than the PL band in pure (undoped) Si NCs, the magnitude of which depends on the dopant concentration. The stronger thermal quenching in band A is probably due to the thermally induced migration of electrons in the impurity band.

  10. Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

    International Nuclear Information System (INIS)

    An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2

  11. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  12. Effect of alkali and chloride ions on pitting corrosion behaviour of boron added modified 9Cr-1Mo steel

    International Nuclear Information System (INIS)

    Modified 9Cr-1Mo ferritic steel is used as a structural material for the steam generator of Prototype Fast Breeder Reactor (PFBR) due to its high temperature corrosion and oxidation resistance. Since all the components (tube, tube sheet and shell) of steam generator are made of modified 9Cr-1Mo, it is also required to be resistant against general and localized corrosion. Modified 9Cr-1Mo steel with 100 ppm boron addition is being considered as the structural material for the steam generators of future fast reactors, owing to its improved creep properties. In the present work, an attempt has been made to study the pitting corrosion behaviour of this material in alkaline environment containing chloride ions. Alkaline environment was chosen to simulate the caustic condition generated in the steam generator due to the accidental leak of feed water containing chloride ions (as impurity) with hot sodium. Potentiodynamic anodic polarization studies were carried out in deaerated 0.1, 0.2 and 0.5M sodium hydroxide solutions containing 0.1, 0.2 and 0.5M sodium chloride. During the experiments current value was allowed to increase up to 1 mA to ensure that stable pits were developed. Pitting potentials (Epp) were determined from the anodic polarization diagrams. The pitted specimens etched in Villela's reagent were observed under an optical microscope as well as a scanning electron microscope (SEM). Most of the pits observed under optical microscope were found to be hemispherical in nature. The diameters of 30 random pits were measured (two diameters at right angles for each pit) and an average diameter for each pit was calculated

  13. A Comparison of the Effects of RF Plasma Discharge and Ion Beam Supply on the Growth of Cubic Boron Nitride Films Formed by Laser Physical Vapor Deposition

    Science.gov (United States)

    Kaneda, Kayo; Shibata, Kimihiro

    1994-01-01

    This paper presents a comparison of the effects of RF plasma discharge and ion beam supply on the growth of cubic boron nitride films formed by excimer laser physical vapor deposition (laser PVD). The film structure was analyzed by fourier transformation infrared region (FT-IR) spectroscopy and thin-film X-ray diffraction analysis. The structure of the film deposited with an RF plasma discharge provided between the substrate and target was hexagonal BN. On the other hand, that of the film deposited by irradiating the substrate directly with an ion beam was hexagonal BN (hBN) and cubic BN (cBN). It is thought that direct irradiation of the vapor generated from the target by accelerated ions increased the activation energy of the vapor, with the result that the film structure was changed. Besides irradiating the substrate directly with the ion beam resulted primarily in the etching of hBN while cBN remained.

  14. The energy levels and transition probabilities for silicon, phosphorous, sulfur, and chlorine ions of the boron iso-electronic sequence

    International Nuclear Information System (INIS)

    The slater type radial wave functions of the 1S, 2S, and 2P orbitals have been employed in order to construct the hartree-fock (HF) wave functions of the ground states 1S2 2S2 2P for Si X, ph XI, S XII and C1 XIII of the boron iso-electronic sequence. The radial functions of the excited orbitals ns, np, and nf (n=3-5) have been optimized using the CIV3 code which uses the multi-configuration hartree-fock (MCHF) method in evaluating these functions. The wave functions thus obtained have been used in calculating energy levels, oscillator strengths and transition probabilities. The calculated energies (in au) relative to the ground state were in a good agreement with the available published experimental and theoretical values within the experimental error for all levels of the ions of the sequence except for the 3 p, 4 p, and 5 p levels of Si X, Ph XI, S XII and CI XIII. The deviation may be attributed to relativistic effects in case of highly ionized members of the sequence. The oscillator strengths for the allowed electric dipole transitions have been computed in dipole-length from by using the same code. The transition probabilities for spontaneous emission Aji (sec1) are calculated using the equation Aji=6.6 x 1015 gi fij / Lambda2 gj (sec1) where lambda is the wavelength of the transition (in A0) from state (i) to state (j) and gi. gj are the statistical weights for these states, fg is the oscillator strength of the transition. More over results of oscillator strengths and transition probabilities are found to be in a fairly good agreement with the available published experimental and theoretical values

  15. Experimental and theoretical investigations of functionalized boron nitride as electrode materials for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fan; Nemeth, Karoly; Bareño, Javier; Dogan, Fulya; Bloom, Ira D.; Shaw, Leon L.

    2016-01-01

    The feasibility of synthesizing functionalized h-BN (FBN) via the reaction between molten LiOH and solid h-BN is studied for the first time and its first ever application as an electrode material in Li-ion batteries is evaluated. Density functional theory (DFT) calculations are performed to provide mechanistic understanding of the possible electrochemical reactions derived from the FBN. Various materials characterizations reveal that the melt-solid reaction can lead to exfoliation and functionalization of h-BN simultaneously, while electrochemical analysis proves that the FBN can reversibly store charges through surface redox reactions with good cycle stability and coulombic efficiency. DFT calculations have provided physical insights into the observed electrochemical properties derived from the FBN.

  16. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  17. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  18. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  19. Biodistribution and subcellular localization of an unnatural boron-containing amino acid (cis-ABCPC by imaging secondary ion mass spectrometry for neutron capture therapy of melanomas and gliomas.

    Directory of Open Access Journals (Sweden)

    Subhash Chandra

    Full Text Available The development of new boron-delivery agents is a high priority for improving the effectiveness of boron neutron capture therapy. In the present study, 1-amino-3-borono-cyclopentanecarboxylic acid (cis-ABCPC as a mixture of its L- and D-enantiomers was evaluated in vivo using the B16 melanoma model for the human tumor and the F98 rat glioma as a model for human gliomas. A secondary ion mass spectrometry (SIMS based imaging instrument, CAMECA IMS 3F SIMS Ion Microscope, was used for quantitative imaging of boron at 500 nm spatial resolution. Both in vivo and in vitro studies in melanoma models demonstrated that boron was localized in the cytoplasm and nuclei with some cell-to-cell variability. Uptake of cis-ABCPC in B16 cells was time dependent with a 7.5:1 partitioning ratio of boron between cell nuclei and the nutrient medium after 4 hrs. incubation. Furthermore, cis-ABCPC delivered boron to cells in all phases of the cell cycle, including S-phase. In vivo SIMS studies using the F98 rat glioma model revealed an 8:1 boron partitioning ratio between the main tumor mass and normal brain tissue with a 5:1 ratio between infiltrating tumor cells and contiguous normal brain. Since cis-ABCPC is water soluble and can cross the blood-brain-barrier via the L-type amino acid transporters (LAT, it may accumulate preferentially in infiltrating tumor cells in normal brain due to up-regulation of LAT in high grade gliomas. Once trapped inside the tumor cell, cis-ABCPC cannot be metabolized and remains either in a free pool or bound to cell matrix components. The significant improvement in boron uptake by both the main tumor mass and infiltrating tumor cells compared to those reported in animal and clinical studies of p-boronophenylalanine strongly suggest that cis-ABCPC has the potential to become a novel new boron delivery agent for neutron capture therapy of gliomas and melanomas.

  20. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  1. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  2. Hyperfine structures and Landé g{sub J}-factors for n=2 states in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations

    Energy Technology Data Exchange (ETDEWEB)

    Verdebout, S.; Nazé, C. [Chimie Quantique et Photophysique, CP160/09, Université Libre de Bruxelles, B 1050 Brussels (Belgium); Jönsson, P., E-mail: per.jonsson@mah.se [Faculty of Technology and Society, Group for Materials Science and Applied Mathematics, Malmö University, 205-06 Malmö (Sweden); Rynkun, P. [Institute of Theoretical Physics and Astronomy, Vilnius University, LT-01108 Vilnius (Lithuania); Godefroid, M. [Chimie Quantique et Photophysique, CP160/09, Université Libre de Bruxelles, B 1050 Brussels (Belgium); Gaigalas, G. [Institute of Theoretical Physics and Astronomy, Vilnius University, LT-01108 Vilnius (Lithuania)

    2014-09-15

    Energy levels, hyperfine interaction constants, and Landé g{sub J}-factors are reported for n=2 states in beryllium-, boron-, carbon-, and nitrogen-like ions from relativistic configuration interaction calculations. Valence, core–valence, and core–core correlation effects are taken into account through single and double-excitations from multireference expansions to increasing sets of active orbitals. A systematic comparison of the calculated hyperfine interaction constants is made with values from the available literature.

  3. Electrochemical oxidation of acid black 210 dye on the boron-doped diamond electrode in the presence of phosphate ions: Effect of current density, pH, and chloride ions

    International Nuclear Information System (INIS)

    The electrochemical oxidation of acid black 210 dye (AB-210) on the boron-doped diamond (BDD) was investigated under different pH conditions. The best performance for the AB-210 oxidation occurred in alkaline phosphate solution. This is probably due to oxidizing agents such as phosphate radicals and peroxodiphosphate ions, which can be electrochemically produced with good yields on the BDD anode, mainly in alkaline solution. Under this condition, the COD (chemical oxygen demand) removal was higher than that obtained from the model proposed by Comninellis. Electrolyses performed in phosphate buffer and in the presence of chloride ions resulted in faster COD and color removals in acid and neutral solutions, but in alkaline phosphate solution, a better performance in terms of TOC removal was obtained in the absence of chloride. Moreover, organochloride compounds were detected in all electrolyses performed in the presence of chloride. The AB-210 electrooxidation on BDD using phosphate as supporting electrolyte proved to be interesting since oxidizing species generated from phosphate ions were able to completely degrade the dye without producing organochloride compounds.

  4. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  5. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  6. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  7. Boron carbide coatings for neutron detection probed by x-rays, ions, and neutrons to determine thin film quality

    Energy Technology Data Exchange (ETDEWEB)

    Nowak, G., E-mail: Gregor.Nowak@hzg.de; Störmer, M.; Horstmann, C.; Kampmann, R.; Höche, D.; Lorenz, U.; Müller, M.; Schreyer, A. [Helmholtz-Zentrum Geesthacht, Max-Planck-Straße 1, 21502 Geesthacht (Germany); Becker, H.-W. [RUBION-Zentrale Einrichtung für Ionenstrahlen und Radionuklide, Ruhr-Universität Bochum, 44780 Bochum (Germany); Haese-Seiller, M.; Moulin, J.-F.; Pomm, M. [Helmholtz-Zentrum Geesthacht, Außenstelle an der Forschungsneutronenquelle Heinz Maier-Leibnitz (FRM II), Technische Universität München, 85747 Garching (Germany); Randau, C. [Georg-August Universität Göttingen, Geowissenschaftliches Zentrum, 37077 Göttingen, Germany and Außenstelle an der Forschungsneutronenquelle Heinz Maier-Leibnitz (FRM II), Technische Universität München, 85747 Garching (Germany); Hall-Wilton, R. [European Spallation Source ESS AB, P.O. Box 176, 221 00 Lund (Sweden)

    2015-01-21

    Due to the present shortage of {sup 3}He and the associated tremendous increase of its price, the supply of large neutron detection systems with {sup 3}He becomes unaffordable. Alternative neutron detection concepts, therefore, have been invented based on solid {sup 10}B converters. These concepts require development in thin film deposition technique regarding high adhesion, thickness uniformity and chemical purity of the converter coating on large area substrates. We report on the sputter deposition of highly uniform large-area {sup 10}B{sub 4}C coatings of up to 2 μm thickness with a thickness deviation below 4% using the Helmholtz-Zentrum Geesthacht large area sputtering system. The {sup 10}B{sub 4}C coatings are x-ray amorphous and highly adhesive to the substrate. Material analysis by means of X-ray-Photoelectron Spectroscopy, Secondary-Ion-Mass-Spectrometry, and Rutherford-Back-Scattering (RBS) revealed low impurities concentration in the coatings. The isotope composition determined by Secondary-Ion-Mass-Spectrometry, RBS, and inelastic nuclear reaction analysis of the converter coatings evidences almost identical {sup 10}B isotope contents in the sputter target and in the deposited coating. Neutron conversion and detection test measurements with variable irradiation geometry of the converter coating demonstrate an average relative quantum efficiency ranging from 65% to 90% for cold neutrons as compared to a black {sup 3}He-monitor. Thus, these converter coatings contribute to the development of {sup 3}He-free prototype detectors based on neutron grazing incidence. Transferring the developed coating process to an industrial scale sputtering system can make alternative {sup 3}He-free converter elements available for large area neutron detection systems.

  8. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  9. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  10. Measurement of boron isotopes by negative thermal ionization mass spectrometry

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The isobaric interference for boron isotopic measurement by negative thermal ionization mass spectrometry (NTIMS) has been studied. The result shows that the CNO- is not only from the organic material, but also from nitrate in loading reagent in NTIMS. Monitoring the mass 43 ion intensity and 43/42 ratio of blank are also necessary for the boron isotopic measurement by NTIMS, other than is only boron content.

  11. Manufacture of Boron-free Magnesia with High Purity from Residual Brine

    Institute of Scientific and Technical Information of China (English)

    Fa Qiang LI; Bao Ping LING; Pei Hua MA

    2004-01-01

    A novel method for removing boron with ion exchange resin from residual brines to manufacture boron-free magnesia is described. The concentration of boron in the target magnesia manufactured thereby from Qinghai salt lakes is lower than 5μg/g, and the typical D50 size of product is 10.625μm.

  12. pH dependent salinity-boron interactions impact yield, biomass, evapotranspiration and boron uptake in broccoli (Brassica oleracea L.)

    Science.gov (United States)

    Soil pH is known to influence many important biochemical processes in plants and soils, however its role in salinity - boron interactions affecting plant growth and ion relations has not been examined. The purpose of this research was to evaluate the interactive effects of salinity, boron and soil ...

  13. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  14. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  15. Determination of boron in nuclear grade sodium metal

    International Nuclear Information System (INIS)

    Determination of boron in nuclear grade sodium metal as rosocyanin and rubrocurcumin complexes is described. Separation of sodium matrix was attempted by vacuum distillation of sodium, methyl borate distillation and ion exchange methods. The ion exchange method was found to be most suitable. Optimum conditions were standardised for the estimation of boron in nuclear grade sodium. In the 200 ppb range an RSD of 5 per cent was obtained. (author). 12 refs

  16. Application of Boron-Based Lithium Salt for Li-Ion Battery%硼基锂盐电解质在锂离子电池中的应用

    Institute of Scientific and Technical Information of China (English)

    仇卫华; 阎坤; 连芳; 乔亚非

    2011-01-01

    Electrolyte is considered as one of the key materials to decide the performance of Li-ion batteries.Novel boron-based lithium salts have attracted people' s interests because of its varieties and environmental-friendly property. Lithium bis(oxalato) borate (LiBOB) , as one of boron-based lithium salts, is believed to be a candidate for commercial LiPF6 due to its good film-forming property and high thermal stability. In the paper, the new development of boron-based lithium salts is introduced, and LiBOB is also evaluated as lithium salt of electrolyte for Li-ion battery. The main influencing factors of LiBOB-based electrolyte are summarized. Especially, it has focused on the compatibility of LiBOB-based electrolyte with anode and metal oxide cathode. The application of LiBOBbased polymer electrolyte and LiBOB plastic chip electrolyte are introduced.%电解质材料是锂离子电池的关键材料之一,它直接影响电池的性能.新型硼酸锂盐由于种类繁多且环境友好而越来越引起人们的重视.双草酸硼酸锂(LiBOB)是一种新型的锂盐,具有很好的成膜性能和热稳定性,是一种很有潜力替代现有商品化锂盐LiPF6的物质.本文介绍了近期新型硼基锂盐的发展状况,归纳了LiBOB基电解质的研究概况,综述了影响LiBOB基电解质的因素,讨论了LiBOB与正负极材料的相容性,并对LiBOB基聚合物电解质和LiBOB塑晶电解质的应用进行了介绍.

  17. Compaction of amorphous iron–boron powder

    DEFF Research Database (Denmark)

    Hendriksen, Peter Vang; Mørup, Steen; Koch, Christian;

    1993-01-01

    report on attempts to compact amorphous iron–boron particles prepared by chemical reduction of Fe(II) ions in aqueous solution by NaBH4 (Ref. 2). The particles prepared in this way are pyrophoric, but can be passivated. The small particle size (10–100 nm), characteristic of this preparation technique...

  18. Boron and Nitrogen Codoped Carbon Layers of LiFePO4 Improve the High-Rate Electrochemical Performance for Lithium Ion Batteries.

    Science.gov (United States)

    Zhang, Jinli; Nie, Ning; Liu, Yuanyuan; Wang, Jiao; Yu, Feng; Gu, Junjie; Li, Wei

    2015-09-16

    An evolutionary composite of LiFePO4 with nitrogen and boron codoped carbon layers was prepared by processing hydrothermal-synthesized LiFePO4. This novel codoping method is successfully applied to LiFePO4 for commercial use, and it achieved excellent electrochemical performance. The electrochemical performance can be improved through single nitrogen doping (LiFePO4/C-N) or boron doping (LiFePO4/C-B). When modifying the LiFePO4/C-B with nitrogen (to synthesis LiFePO4/C-B+N) the undesired nonconducting N-B configurations (190.1 and 397.9 eV) are generated. This decreases the electronic conductivity from 2.56×10(-2) to 1.30×10(-2) S cm(-1) resulting in weak electrochemical performance. Nevertheless, using the opposite order to decorate LiFePO4/C-N with boron (to obtain LiFePO4/C-N+B) not only eliminates the nonconducting N-B impurity, but also promotes the conductive C-N (398.3, 400.3, and 401.1 eV) and C-B (189.5 eV) configurations-this markedly improves the electronic conductivity to 1.36×10(-1) S cm(-1). Meanwhile the positive doping strategy leads to synergistic electrochemical activity distinctly compared with single N- or B-doped materials (even much better than their sum capacity at 20 C). Moreover, due to the electron and hole-type carriers donated by nitrogen and boron atoms, the N+B codoped carbon coating tremendously enhances the electrochemical property: at the rate of 20 C, the codoped sample can elevate the discharge capacity of LFP/C from 101.1 mAh g(-1) to 121.6 mAh g(-1), and the codoped product based on commercial LiFePO4/C shows a discharge capacity of 78.4 mAh g(-1) rather than 48.1 mAh g(-1). Nevertheless, the B+N codoped sample decreases the discharge capacity of LFP/C from 101.1 mAh g(-1) to 95.4 mAh g(-1), while the commercial LFP/C changes from 48.1 mAh g(-1) to 40.6 mAh g(-1). PMID:26305802

  19. SIMS ion microscopy imaging of boronophenylalanine (BPA) and 13C15N-labeled phenylalanine in human glioblastoma cells: Relevance of subcellular scale observations to BPA-mediated boron neutron capture therapy of cancer

    Science.gov (United States)

    Chandra, Subhash; Lorey, Daniel R., II

    2007-02-01

    p-Boronophenylalanine (BPA) is a clinically approved boron neutron capture therapy (BNCT) agent currently being used in clinical trials of glioblastoma multiforme, melanoma and liver metastases. Secondary ion mass spectrometry (SIMS) observations from the Cornell SIMS Laboratory provided support for using a 6 h infusion of BPA, instead of a 2 h infusion, for achieving higher levels of boron in brain tumor cells. These observations were clinically implemented in Phase II experimental trials of glioblastoma multiforme in Sweden. However, the mechanisms for higher BPA accumulation with longer infusions have remained unknown. In this work, by using 13C15N-labeled phenylalanine and T98G human glioblastoma cells, comparisons between the 10B-delivery of BPA and the accumulation of labeled phenylalanine after 2 and 6 h treatments were made with a Cameca IMS-3f SIMS ion microscope at 500 nm spatial resolution in fast frozen, freeze-fractured, freeze-dried cells. Due to the presence of the Na-K-ATPase in the plasma membrane of most mammalian cells, the cells maintain an approximately 10/1 ratio of K/Na in the intracellular milieu. Therefore, the quantitative imaging of these highly diffusible species in the identical cell in which the boron or labeled amino acid was imaged provides a rule-of-thumb criterion for validation of SIMS observations and the reliability of the cryogenic sampling. The labeled phenylalanine was detected at mass 28, as the 28(13C15N)- molecular ion. Correlative analysis with optical and confocal laser scanning microscopy revealed that fractured freeze-dried glioblastoma cells contained well-preserved ultrastructural details with three discernible subcellular regions: a nucleus or multiple nuclei, a mitochondria-rich perinuclear cytoplasmic region and the remaining cytoplasm. SIMS analysis revealed that the overall cellular signals of both 10B from BPA and 28CN- from labeled phenylalanine increased approximately 1.6-fold between the 2 and 6 h exposures

  20. In situ fabrication of three-dimensional nitrogen and boron co-doped porous carbon nanofibers for high performance lithium-ion batteries

    Science.gov (United States)

    Zhang, Lijun; Xia, Guanglin; Guo, Zaiping; Sun, Dalin; Li, Xingguo; Yu, Xuebin

    2016-08-01

    This paper reports the fabrication of three-dimensional porous carbon nanofibers network with high doping level of nitrogen (N, 5.17 at.%) and boron (B, 6.87 at.%) through a general electrospinning strategy followed by a calcination process. The employed ammonia borane (NH3BH3, denote as AB) not only functions as a porogen reagent to generate porous structures but also as the heteroatoms source to induce N and B co-doping. Such highly unique nanoarchitectures offer remarkably improved Li storage performance including high reversible capacity (∼910 mAh g-1 at a current density of 100 mA g-1) with good cycling and rate performances.

  1. Probing Field Emission from Boron Carbide Nanowires

    Institute of Scientific and Technical Information of China (English)

    TIAN Ji-Fa; GAO Hong-Jun; BAO Li-Hong; WANG Xing-Jun; HUI Chao; LIU Fei; LI Chen; SHEN Cheng-Min; WANG Zong-Li; GU Chang-Zhi

    2008-01-01

    High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 106 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.

  2. Depth resolved investigations of boron implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sztucki, M. E-mail: michael@sztucki.de; Metzger, T.H.; Milita, S.; Berberich, F.; Schell, N.; Rouviere, J.L.; Patel, J

    2003-01-01

    We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6x10{sup 15} ions/cm{sup -2} at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {l_brace}1 1 1{r_brace} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

  3. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  4. First gaseous boronization during pulsed discharge cleaning

    Science.gov (United States)

    Ko, J.; Den Hartog, D. J.; Goetz, J. A.; Weix, P. J.; Limbach, S. T.

    2013-01-01

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C2B10H12) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  5. First gaseous boronization during pulsed discharge cleaning

    Energy Technology Data Exchange (ETDEWEB)

    Ko, J., E-mail: jinseok@nfri.re.kr [Department of Physics, University of Wisconsin, Madison, WI (United States); Den Hartog, D.J.; Goetz, J.A.; Weix, P.J.; Limbach, S.T. [Department of Physics, University of Wisconsin, Madison, WI (United States)

    2013-01-15

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C{sub 2}B{sub 10}H{sub 12}) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  6. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst. PMID:18961131

  7. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst.

  8. Removal of boron species by layered double hydroxides: a review.

    Science.gov (United States)

    Theiss, Frederick L; Ayoko, Godwin A; Frost, Ray L

    2013-07-15

    Boron, which is an essential element for plants, is toxic to humans and animals at high concentrations. Layered double hydroxides (LDHs) and thermally activated LDHs have shown good uptake of a range of boron species in laboratory scale experiments when compared to current available methods, which are for the most part ineffective or prohibitively expensive. LDHs were able to remove anions from water by anion exchange, the reformation (or memory) effect and direct precipitation. The main mechanism of boron uptake appeared to be anion exchange, which was confirmed by powder X-ray diffraction (XRD) measurements. Solution pH appeared to have little effect on boron sorption while thermal activation did not always significantly improve boron uptake. In addition, perpetration of numerous LDHs with varying boron anions in the interlayer region by direct co-precipitation and anion exchange have been reported by a number of groups. The composition and orientation of the interlayer boron ions could be identified with reasonable certainty by applying a number of characterisation techniques including: powder XRD, nuclear magnetic resonance spectroscopy (NMR), X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy. There is still considerable scope for future research on the application of LDHs for the removal of boron contaminants. PMID:23635479

  9. Technology for boron-doped layers formation on the diamond

    Directory of Open Access Journals (Sweden)

    Zyablyuk K. N.

    2012-10-01

    Full Text Available The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impurity density indicate that they can be used for the manufacture of microwave field-effect transistors operating at room temperature. CVD diamond films doped with boron during the growth process also have the required for MOSFET manufacture carrier mobility. However, due to the high activation energy of boron, the required channel conductivity is achieved at high operating temperatures.

  10. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.;

    2013-01-01

    . The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron...

  11. Research of nanocomposite structure of boron nitride at proton radiation

    OpenAIRE

    Borodin, Yuri Viktorovich; Ermolaev, D. S.; Pak, V.; Zhang, K.

    2016-01-01

    Using roentgen diffraction and electron microscopy, the influence of nanosecond irradiation by ion beams of high energy on forming of self-organized nanoblocks in near surface's layers of boron nitride (BN) has been studied. It was shown that low temperature transitions from hexagonal to wrutz boron nitrides is associated with changes of shape and sizes of self-organized particles consisting the nanoblocks. We have calculated the parameters of nanoblocks using the meanings of interplane dista...

  12. Recent results of boronization on EAST and HT-7 superconducting tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Wu, J.H., E-mail: wujinhua@ipp.ac.cn [Institute of Plasma Physics, P.O. Box 1126, Hefei, Anhui 230031 (China); Hu, J.S., E-mail: hujs@ipp.ac.cn [Institute of Plasma Physics, P.O. Box 1126, Hefei, Anhui 230031 (China); Chen, Y. [Institute of Plasma Physics, P.O. Box 1126, Hefei, Anhui 230031 (China); Ashikawa, N. [National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan); Yu, Y.W.; Li, J.H.; Zuo, G.Z.; Wang, X.M.; Zhao, Y.P.; Li, J.G. [Institute of Plasma Physics, P.O. Box 1126, Hefei, Anhui 230031 (China)

    2011-08-01

    The importance of wall conditionings for the reduction of the impurities in plasmas has been recognized in most tokamaks. Boronization associated with Ion Cyclotron Resonance Frequency discharge (ICRF boronization) has been developed on HT-7 superconducting tokamak since 1998, and now this boronization technique has become a routine method for wall conditioning on HT-7 and also on EAST. Carborane (C{sub 2}B{sub 10}H{sub 12}) was used for the boronization and helium was usually provided as the auxiliary gas. However, after this kind boronization, lots of H{sub 2} released from the boron film make the controlling of the plasma density very difficulty. Recently, to reduce H{sub 2} content in the film, we change the auxiliary gas from He to D{sub 2} during the whole boronization procedure and find the release of H{sub 2} during plasma discharges was greatly reduced.

  13. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  14. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  15. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  16. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  17. Separation and Analysis of Boron Isotope in High Plant by Thermal Ionization Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Qingcai Xu

    2015-01-01

    Full Text Available Knowledge of boron and its isotope in plants is useful to better understand the transposition and translocation of boron within plant, the geochemical behavior in the interface between soil and plant, and the biogeochemical cycle of boron. It is critical to develop a useful method to separate boron from the plant for the geochemical application of boron and its isotope. A method was developed for the extraction of boron in plant sample, whose isotope was determined by thermal ionization mass spectrometry. The results indicated that this method of dry ashing coupled with two-step ion-exchange chromatography is powerful for the separation of boron in plant sample with large amounts of organic matters completely. The ratios of boron isotope composition in those plant tissue samples ranged from -19.45‰ to +28.13‰ (total range: 47.58‰ with a mean value of 2.61±11.76‰ SD. The stem and root isotopic compositions were lower than those in flower and leaf. The molecular mechanism of boron isotope may be responsible for the observed variation of boron isotopic composition and are considered as a useful tool for the better understanding of boron cycling process in the environment and for the signature of living systems.

  18. RAMAN SPECTRUM STUDIES OF THE COORDINATIONS OF ALUMINIUM AND BORON IN Na2O-Al2O3-B2O3-P2O5 GLASSES

    OpenAIRE

    Yifen, Yin; Dehua, Jiang; Xiangsheng, Chen; Beiya, Bian; Xihuai, Huang

    1985-01-01

    The coordination states of aluminium and boron in Na2O-Al2O3-B2O3-P2O5 glasses have been studied by means of Raman spectroscopy. The study shows that when boron and aluminium ions exist simultaneously in phosphate glasses, it is possible that boron ions form BO4 tetrahedra prior to aluminium ions, and the former has three and four coordinations while the latter has four and six.

  19. Novel Boron Based Multilayer Thermal Neutron Detector

    CERN Document Server

    SCHIEBER, M

    2010-01-01

    The detector contains four or more layers of natural Boron absorbing thermal neutrons. Thickness of a layer is 0.4 - 1.2 mg/cm2. The layers are deposited on one or on both sides of a metal surface used as contacts. Between the absorbing layers there are gas-filled gaps 3 - 6 mm thick. Electric field of 100 - 200 V/cm is applied to the gas-filled gaps. Natural Boron contains almost 20% of 10B isotope. When atoms of 10B capture a thermal neutron, nuclear reaction occurs, as a result of which two heavy particles - alpha particle and ion 7Li - from the thin absorber layer are emitted in opposing sides. One of the two particles penetrates into gas-filled gap between Boron layers and ionizes the gas. An impulse of electric current is created in the gas-filled gap actuated by the applied electric field. The impulse is registered by an electronic circuit. We have made and tested detectors containing from two to sixteen layers of natural Boron with an efficiency of thermal neutron registration from 2.9% to 12.5% accor...

  20. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  1. Boron Plays an Important Role in the Regulation of Plant Cell Growth

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Boron is an essential nutrition for higher plants.However, the primary function of boron remains a matter of discussion.Boron may function by forming complexes with compounds having cis-hydroxyl groups(diols), e.g., pectic materials in cell walls, glycoproteins or glycolipids in membranes and o-diphenols.The well-defined functions of boron are its involvement in maintaining cell wall structure and both the structural and the functional integrity of plasma membrane.Lack of boron causes an increase in the leakage of ions and compounds which reflects the impairment of plasma membrane.Boron is functionally important in forming a pectic network in cell wall which is responsible for the extensibility of cell wall and consequently regulates cell growth.

  2. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  3. Plasma boron and the effects of boron supplementation in males.

    Science.gov (United States)

    Green, N R; Ferrando, A A

    1994-11-01

    Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all.

  4. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  5. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.;

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...

  6. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  7. Oxidation of Silicon and Boron in Boron Containing Molten Iron

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium-frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that silicon and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400 ℃. The favorable oxidation temperature of silicon was about 1 300-1 350 C. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.

  8. Low-energy electronic stopping for boron in beryllium

    International Nuclear Information System (INIS)

    The range distribution for 50-keV boron bombarding beryllium was measured by an energetic ion-beam backscattering technique using helium ions. This distribution was compared with the range calculated with computer code EDEP1, with the result k 0.101 ± 0.013 for the electronic-stopping k-value. This value is compared with the results of recent interpolations from measurements of other elements. (author)

  9. Micrometric rods grown by nanosecond pulsed laser deposition of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Quintas, Ignacio; Oujja, Mohamed; Sanz, Mikel; Benitez-Cañete, Antonio [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Chater, Richard J. [Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Cañamares, Maria Vega [Instituto de Estructura de la Materia, CSIC, Serrano 119, 28006 Madrid (Spain); Marco, José F. [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Castillejo, Marta, E-mail: marta.castllejo@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-02-15

    Highlights: • Micrometric rods obtained by ns pulsed laser deposition of boron carbide at 1064 and 266 nm. • At 1064 nm microrods display crystalline polyhedral shape with sharp edges and flat sides. • Microrods consist of a mixture of boron, boron oxide, boron carbide and aliphatic hydrocarbons. - Abstract: Micrometric size rods have been fabricated via pulsed laser deposition in vacuum from boron carbide targets using nanosecond pulses of 1064 and 266 nm and room temperature Si (1 0 0) substrates. Morphological, structural and chemical characterization of the microrods was made by applying scanning electron microscopy, focussed ion beam microscopy coupled to secondary ion mass spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. Ablation at 1064 nm favours the formation of microrods with high aspect ratio, sharp edges and pyramidal tips, typically 10 μm long with a cross section of around 2 μm × 2 μm. Differently, at 266 nm the microrods are of smaller size and present a more globular aspect. The analyses of the microrods provide information about their crystalline nature and composition, based on a mixture which includes boron, boron oxide and boron carbide, and allows discussion of the wavelength dependent growth mechanisms involved.

  10. Extractive fixed-site polymer sorbent for selective boron removal from natural water.

    Science.gov (United States)

    Thakur, Neha; Kumar, Sanjukta A; Shinde, Rakesh N; Pandey, Ashok K; Kumar, Sangita D; Reddy, A V R

    2013-09-15

    Water contamination by boron is a widespread environmental problem. The World Health Organization (WHO) recommends maximum boron concentration of 2.4 mg L(-1) for drinking water. The paper presents a simple method for preparation of functionalized sheet sorbent for selective extraction of boron from natural water. The pores of commercially available poly(propylene) membrane were functionalized by room temperature in situ crosslinking of poly(vinylbenzyl chloride) with a cyclic diamine piperazine. The precursor membranes were chemically modified with N-methyl D-glucamine which is selective for boron. Characterization of membrane was carried out using scanning electron microscopy (SEM) and attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) techniques. The functionalized membrane has been characterized in terms of parameters that influence the sorption of boron from aqueous streams like pH, uptake capacity, contact time, effects of competing ions and reusability. The maximum boron sorption capacity determined experimentally was 28 mg g(-1). The studies showed that trace concentrations of boron were quantitatively removed from water at neutral pH. The developed fixed site polymer sorbent exhibited high sorption capacity and fast kinetics as compared to various sorbents reported in literature. It was successfully applied for the removal of boron from ground water and seawater samples in presence of high concentration of interfering ions. PMID:23892170

  11. Extractive fixed-site polymer sorbent for selective boron removal from natural water.

    Science.gov (United States)

    Thakur, Neha; Kumar, Sanjukta A; Shinde, Rakesh N; Pandey, Ashok K; Kumar, Sangita D; Reddy, A V R

    2013-09-15

    Water contamination by boron is a widespread environmental problem. The World Health Organization (WHO) recommends maximum boron concentration of 2.4 mg L(-1) for drinking water. The paper presents a simple method for preparation of functionalized sheet sorbent for selective extraction of boron from natural water. The pores of commercially available poly(propylene) membrane were functionalized by room temperature in situ crosslinking of poly(vinylbenzyl chloride) with a cyclic diamine piperazine. The precursor membranes were chemically modified with N-methyl D-glucamine which is selective for boron. Characterization of membrane was carried out using scanning electron microscopy (SEM) and attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) techniques. The functionalized membrane has been characterized in terms of parameters that influence the sorption of boron from aqueous streams like pH, uptake capacity, contact time, effects of competing ions and reusability. The maximum boron sorption capacity determined experimentally was 28 mg g(-1). The studies showed that trace concentrations of boron were quantitatively removed from water at neutral pH. The developed fixed site polymer sorbent exhibited high sorption capacity and fast kinetics as compared to various sorbents reported in literature. It was successfully applied for the removal of boron from ground water and seawater samples in presence of high concentration of interfering ions.

  12. Characterization of Boron Diffusion Phenomena According to the Specific Resistivity of N-Type Si Wafer.

    Science.gov (United States)

    Lee, Woo-Jin; Choi, Chel-Jong; Park, Gye-Choon; Yang, O-Bong

    2016-02-01

    This paper is directed to characterize the boron diffusion process according to the specific resistivity of the Si wafer. N-type Si wafers were used with the specific resistivity of 0.5-3.2 omega-cm, 1.0-6.5 omega-cm and 2.0-8.0 omega-cm. The boron tribromide (BBr3) was used as boron source to create the PN junction on N-type Si wafer. The boron diffusion in N-type Si wafer was characterized by sheet resistance of wafer surface, secondary ion mass spectroscopy measurements (SIMS) and surface life time analysis. The degree of boron diffusion was depended on the variation in specific resistivity and sheet resistance of the bare N-type Si wafer. The boron diffused N-Si wafer exhibited the average junction depth of 750 nm and boron concentration of 1 x 10(19). N-type Si wafer with the different specific resistance considerably affected the boron diffusion length and life time of Si wafer. It was found that the lifetime of boron diffused wafer was proportional to the sheet resistance and resistivity. However, optimization process may necessary to achieve the high efficiency through the high sheet resistance wafer, because the metallization process control is very sensitive.

  13. Boron toxicity causes multiple effects on Malus domestica pollen tube growth

    Directory of Open Access Journals (Sweden)

    Kefeng eFang

    2016-02-01

    Full Text Available Boron is an essential micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this stress is not known. This study aimed to evaluate the effect of boron stress on Malus domestica pollen tube growth and its possible regulatory pathway. Our results show that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron stress could decrease [Ca2+]c and induce the disappearance of the [Ca2+]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron stress. Immuno-localization and fluorescence labeling, together with Fourier-transform infrared analysis (FTIR, suggested that boron stress influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca2+]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

  14. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; Zhong, J. X.

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  15. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  16. Spectrophotometric determination of boric acid in boron powder with curcumin

    International Nuclear Information System (INIS)

    A rapid and accurate method was needed to determine trace amounts of boric acid for quality control and specification testing of elemental boron. The reaction between boric acid and curcumin occurs at a measurable rate only when the curcumin molecule is protonated. Protonation takes place at the carbonyl groups in the presence of a strong acid and occurs completely and rapidly when sulfuric acid is added to a solution of curcumin in acetic acid. Spectrophotometric measurements were made. The extraction of boric acid from boron powder was found to be complete within 2h when either water or the diol solution was used. Whatman No. 40 cr 42 filter paper was used to obtain diol samples free of boron particles. The extraction efficiency of 2-ethyl-1,3-hexanediol was evaluated by adding 1 ml of 500 ppM aqueous boric acid and 1 drop of 10% NaOH to accurately weighed samples of boron powder. The water then was evaporated at room temperature and the samples were extracted with diol solution. The data obtained are included. The extraction efficiency also was evaluated by determining the boric acid content of boron which had been recovered from a previous extraction and boric acid determination. The determination of boric acid using curcumin is unaffected by the presence of other compounds, except for fluoride and nitrate ions. 2 tables

  17. Determination of boron spectrophotometry in thorium sulfate

    International Nuclear Information System (INIS)

    A procedure for the determination of microquantities of boron in nuclear grade thorium sulfate is described. The method is based on the extraction of BF-4 ion associated to monomethylthionine (MMT) in 1,2 - dichloroethane. The extraction of the colored BF-4-MMT complex does not allow the presence of sulfuric and phosphoric acids; other anions interfere seriously. This fact makes the dissolution of the thorium sulfate impracticable, since it is insoluble in both acids. On the other hand, the quantitative separation of thorium is mandatory, to avoid the precipitation of ThF4. To overcome this difficulty, the thorium sulfate is dissolved using a strong cationic ion exchanger, Th4+ being totally retained into the resin. Boron is then analysed in the effluent. The procedure allows the determination of 0.2 to 10.0 microgramas of B, with a maximum error of 10%. Thorium sulfate samples with contents of 0.2 to 2.0μg B/gTh have being analysed

  18. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  19. Resonant laser-SNMS of boron for analysis of paleoceanographic samples

    Science.gov (United States)

    Vering, G.; Crone, C.; Kathers, P.; Bijma, J.; Arlinghaus, H. F.

    2006-07-01

    Calcite shells of foraminifera, which are accumulated in the ocean sediment, are an important object of paleoceanographic studies to reconstruct environmental parameters of the past. Foraminifera are unicellular organisms living in almost all parts of the ocean during the entire paleoceanographic time scale. The isotope ratio of boron incorporated in the calcite shell delivers information about the pH-value of the ocean at the time the shell was formed. Since the boron fraction of such a shell is about 5 ppm, an extremely sensitive technique is necessary for an exact boron isotope ratio determination. Resonant laser secondary neutral mass spectrometry (r-laser-SNMS) was used to measure boron isotope ratios in calcite shells. Analysis was carried out with a time-of-flight mass spectrometer equipped with an electron impact gun for sputtering and a Ga + primary ion source. Resonant ionization of sputtered boron neutrals was performed via a three-step ionization scheme accomplished with two tunable dye lasers and the fundamental wavelength of a Nd:YAG laser. After optimizing the boron ionization and detection process, boron isotope ratios were directly measured on single foraminiferal shells after removing contaminants by Ar + ion beam sputtering.

  20. Resonant laser-SNMS of boron for analysis of paleoceanographic samples

    Energy Technology Data Exchange (ETDEWEB)

    Vering, G. [Physikalisches Institut, Universitaet Muenster, Wilhelm-Klemm-Str 10, D-48149 Muenster (Germany); Crone, C. [Physikalisches Institut, Universitaet Muenster, Wilhelm-Klemm-Str 10, D-48149 Muenster (Germany); Kathers, P. [Physikalisches Institut, Universitaet Muenster, Wilhelm-Klemm-Str 10, D-48149 Muenster (Germany); Bijma, J. [Carbon Group, Alfred Wegener Institute for Polar and Marine Research, D-27570 Bremerhaven (Germany); Arlinghaus, H.F. [Physikalisches Institut, Universitaet Muenster, Wilhelm-Klemm-Str 10, D-48149 Muenster (Germany)]. E-mail: arlinghaus@uni-muenster.de

    2006-07-30

    Calcite shells of foraminifera, which are accumulated in the ocean sediment, are an important object of paleoceanographic studies to reconstruct environmental parameters of the past. Foraminifera are unicellular organisms living in almost all parts of the ocean during the entire paleoceanographic time scale. The isotope ratio of boron incorporated in the calcite shell delivers information about the pH-value of the ocean at the time the shell was formed. Since the boron fraction of such a shell is about 5 ppm, an extremely sensitive technique is necessary for an exact boron isotope ratio determination. Resonant laser secondary neutral mass spectrometry (r-laser-SNMS) was used to measure boron isotope ratios in calcite shells. Analysis was carried out with a time-of-flight mass spectrometer equipped with an electron impact gun for sputtering and a Ga{sup +} primary ion source. Resonant ionization of sputtered boron neutrals was performed via a three-step ionization scheme accomplished with two tunable dye lasers and the fundamental wavelength of a Nd:YAG laser. After optimizing the boron ionization and detection process, boron isotope ratios were directly measured on single foraminiferal shells after removing contaminants by Ar{sup +} ion beam sputtering.

  1. Isotopic fractionation of boron in growing corals and its palaeoenvironmental implication

    Digital Repository Service at National Institute of Oceanography (India)

    Xiao, Y.K.; Shirodkar, P.V.; Zhang, C.G.; Wei, H.Z.; Liu, W.G.; Zhou, W.J.

    function calculati ons and boron adsorption e x- periments on ion exchange resin. Thereafter, a lower a43 of 0.968 was determined 7 based on adsorption exper i ments of boron onto marine clays. Moreover, Hemming et al. 8 calculated a fractionation... - mely important parameter in the calcul a tion of palaeo - pH valu es of sea water for studying the oceanic palaeo - environ ments and are based on the isotopic co m position of boron ( d11 B c ) in marine biogenic carbonates. Using these a43 values...

  2. Chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    The standard covers analytical procedures to determine compliance of nuclear-grade boron carbide powder and pellets to specifications. The following methods are described in detail: total carbon by combustion and gravimetry; total boron by titrimetry; isotopic composition by mass spectrometry; chloride and fluoride separation by pyrohydrolysis; chloride by constant-current coulometry; fluoride by ion-selective electrode; water by constant-voltage coulometry; impurities by spectrochemical analysis; soluble boron by titrimetry; soluble carbon by a manometric measurement; metallic impurities by a direct reader spectrometric method. (JMT)

  3. The feasibility of boron removal from water by capacitive deionization

    Energy Technology Data Exchange (ETDEWEB)

    Avraham, Eran, E-mail: eranchem@gmail.com [Department of Chemistry, Bar Ilan University, Ramat-Gan 52900 (Israel); Noked, Malachi; Soffer, Abraham; Aurbach, Doron [Department of Chemistry, Bar Ilan University, Ramat-Gan 52900 (Israel)

    2011-07-15

    Highlights: > Boron removal by electrochemical means. > Temporary local pH changes developed within the pores were indicated by using MgCl{sub 2} in the solution as a probe. > The process of Boron extraction from water takes place in two stages: 1. dissociation of boric acid on the negatively polarized electrode. 2. Electro-adsorption of borate ion onto the positively polarized electrode. - Abstract: We report on the possibility of removing boron (in the form of boric acid) from water by electrochemical means. We explore capacitive de-ionization (CDI) processes in which local changes in pH near the surface of high-surface-area activated carbon fiber (ACF) electrodes during charging are utilized, in order to dissociate boric acid into borate ions which can be electro-adsorbed onto the positive electrode in the CDI cells. For this purpose, a special flow-through CDI cell was constructed in which the feed solution flows through the electrodes. Local pH changes near the carbon electrode surface were investigated using a MgCl{sub 2} solution probe in three- (with reference) and two-electrode cells, and described qualitatively. We show that, to a certain extent, boron can indeed be removed from water by CDI.

  4. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

    OpenAIRE

    Mortet, Vincent; Pernot, J.; Jomard, F.; Soltani, A; Remes, Zdenek; Barjon, Julien; D'Haen, J; Haenen, Ken

    2015-01-01

    Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation...

  5. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.L. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Tang, Y.; Yang, L.; Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y.; Cui, X. [Canadian Light Source Inc., 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada)

    2015-08-31

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B{sub 4}C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B{sub 4}C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp{sup 3} bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp{sup 3} bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp{sup 3} bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films.

  6. Progress in bright ion beams for industry, medicine and fusion at LBNL

    International Nuclear Information System (INIS)

    Recent progresses at LBNL in developing ion beams for industry, radiation therapy and inertial fusion applications were discussed. The highlights include ion beam lithography, boron neutron capture therapy (BNCT), and heavy ion fusion (HIF) drivers using multiple linacs

  7. Molecular ion sources for low energy semiconductor ion implantation (invited).

    Science.gov (United States)

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. PMID:26932065

  8. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Science.gov (United States)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  9. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  10. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  11. A Preliminary experimental study of the boron concentration in vapor and the isotopic A preliminary experimental study of the boron concentrationin vapor and the isotopic fractionation of boron betweenseawater and vapor during evaporation of seawater

    Institute of Scientific and Technical Information of China (English)

    XIAO; Yingkai

    2001-01-01

    [1]Gast, J. A., Thompson, T. G., Evaporation of boric acid from seawater, Tellus, 1959, 6: 344-347.[2]Nishimura, M., Tanaka, K., Seawater may not be a source of boron in the atmosphere, J. Geoph. Res., 1972, 77: 5239-5242.[3]Fogg, T. R., Duce, R. A., Fasching, J. L., Sampling and determination of boron in the atmosphere, Anal. Chem., 1983, 55:2179-2184.[4]Fogg, T. R., Duce, R. A., Boron in the troposphere: Distribution and fluxes, J. Geoph. Res., 1985, 90: 3781-3796.[5]Spivack, A. J., Berndt, M. E., Seyfreid, W. E., Boron isotope fractionation during supercritical phase separation, Geochim.Cosmochim. Acta, 1990, 54: 2337-2339.[6]Palmer, M. R., London, D., Morgan, G. B. et al., Experimental determination of fractionation of 11B/10B between tourma-line and aqueous vapor: A temperature and pressure-dependent isotopic system, Chem. Geol., 1992, 101:123-129.[7]Hervig, R. L., London, D., Morgan, G. B. et al., Large boron isotope fractionation between hydrous vapor and silicate meltat igneous temperatures, in the Seventh Annual V. M. Goldschmidt Conf., LPI Contribution No. 921, Houston: Lunar and Planetary Institute, 1997, 93-94.[8]Vengosh, A., Starinsky, A., Kolodny, Y. et al., Boron isotope variations during fractional evaporation of seawater: New constraints on the marine vs. nonmarine debate, Geology, 1992, 20: 799-802.[9]Zhang, X. P., Shi, Y. E, Yao, T. D., The variation characteristics of δo18O in precipitation in Northeastern Qing-Zhang Plateau, Science in China, Series B (in Chinese), 1995, 25(5): 540-547.[10]Yu, J. S., Yu, E J., Liu, D. P., The hydrogen and oxygen of isotopic compositions of meteoric water in the eastern part of China, Geochimica (in Chinese), 1987, (1): 22-26.[11]Xiao, Y. K., Xiao, Y., Swihart, G. H. et al., Separation of boron by ion exchange with boron specific resin, Acta Geosci.Sinica (in Chinese), 1997, 18: 286-289.[12]Kiss, E., Ion-exchange separation and spectrophotometric determination of

  12. Determination of Boron in soils and plants samples using spectrophotometric method

    International Nuclear Information System (INIS)

    In this work, the concentration of boron in soil and plant samples was determined with UV-vis spectrophotometer by using azomethine-H as a complex reagent. The calibration curve for boron determination in the range of (0μ3 g.mL-1) was constructed by plotting the measured absorption of the yellow azomethine-H-B complex at λmax = 412.6 nm against boron concentration in the aqueous phase. The detection limit, repeatability limit, intermediate precision, accuracy, and recovery coefficient of this method were calculated and found to be 0.021 μg.mL-1, 0.335% , 0.81%, 2.93%, (98.4-101.5)% respectively. The influence of some foreign ions on the determination of boron were also investigated in detail, most of the studied ions, like iron, iodide, and calcium can be tolerated within the ranges of (20-35μg.mL-1), (3000-5000μg.mL-1) , (15000-30000μg.mL-1) respectively. This is due to the fact, that ascorbic acid and EDTA in the buffer masking reagent reaction system can be very effective in masking these ions. This method was found to be economic and suitable for boron determination in standard and local samples (soil, plant) and requires small amount of sample (1g). This method can also be applied for boron determination in water samples (drinking and industrial waste water).(author)

  13. Rapid accurate isotopic measurements on boron in boric acid and boron carbide.

    Science.gov (United States)

    Duchateau, N L; Verbruggen, A; Hendrickx, F; De Bièvre, P

    1986-04-01

    A procedure is described whereby rapid and accurate isotopic measurements can be performed on boron in boric acid and boron carbide after fusion of these compounds with calcium carbonate. It allows the determination of the isotopic composition of boron in boric acid and boron carbide and the direct assay of boron or the (10)B isotope in boron carbide by isotope-dilution mass spectrometry.

  14. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  15. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  16. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  17. Boron toxicity in Lemna gibba

    OpenAIRE

    Mayra Sánchez Villavicencio; Carlos Álvarez Silva; Guadalupe Miranda Arce

    2007-01-01

    Total soluble phenols and total chlorophylls content, changes of biomass and concentration factor in Lemna gibba exposed to different concentrations of boron were measured. Day six soluble phenols showed significant differences in treatment with 10 mg/L of boron. At day ten, chlorophylls content in treatment 2 mg/L concentration increased respect to other experimental groups and control group, there were no significant differences. Biomass of Lemna gibba decreased significant in treatments wi...

  18. Irreversibility of Pressure Induced Boron Speciation Change in Glass

    OpenAIRE

    Morten M. Smedskjaer; Youngman, Randall E.; Simon Striepe; Marcel Potuzak; Ute Bauer; Joachim Deubener; Harald Behrens; John C. Mauro; Yuanzheng Yue

    2014-01-01

    It is known that the coordination number (CN) of atoms or ions in many materials increases through application of sufficiently high pressure. This also applies to glassy materials. In boron-containing glasses, trigonal BO3 units can be transformed into tetrahedral BO4 under pressure. However, one of the key questions is whether the pressure-quenched CN change in glass is reversible upon annealing below the ambient glass transition temperature (T g). Here we address this issue by performing 11...

  19. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  20. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  1. Rate effects during radiation-enhanced diffusion of boron in silicon

    International Nuclear Information System (INIS)

    The influence of the rate of defect generation on radiation-enhanced diffusion (RED) of preimplanted boron atoms in silicon due to postbombardment at 750 0C is investigated using SIMS-depth profiling. The generation rate is varied by the beam current density and the ion species, respectively. The excess diffusivity of boron increases proportional to the generation rate for light ion irradiation, but for production rates larger than about 0.2 s-1 displ./atom it decreases again. The rate effects are explained by a dynamical overlapping model. (author)

  2. The boron doping of single crystal diamond for high power diode applications

    Science.gov (United States)

    Nicley, Shannon Singer

    Diamond has the potential to revolutionize the field of high power and high frequency electronic devices as a superlative electronic material. The realization of diamond electronics depends on the control of the growth process of both lightly and heavily boron doped diamond. This dissertation work is focused on furthering the state of the art of boron doped diamond (BDD) growth toward the realization of high power diamond Schottky barrier diodes (SBDs). The achievements of this work include the fabrication of a new dedicated reactor for lightly boron doped diamond deposition, the optimization of growth processes for both heavily and lightly boron doped single crystal diamond (SCD), and the proposal and realization of the corner architecture SBD. Boron doped SCD is grown in microwave plasma-assisted chemical vapor deposition (MPACVD) plasma disc bell-jar reactors, with feedgas mixtures including hydrogen, methane, carbon dioxide, and diborane. Characterization methods for the analysis of BDD are described, including Fourier-transformed infrared spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS) and temperature-dependent four point probe conductivity for activation energy. The effect of adding carbon dioxide to the plasma feedgas for lightly boron doped diamond is investigated. The effect of diborane levels and other growth parameters on the incorporated boron levels are reported, and the doping efficiency is calculated over a range of boron concentrations. The presence of defects is shown to affect the doping uniformity. The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in heavily boron doped SCD deposition is investigated. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron

  3. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    Energy Technology Data Exchange (ETDEWEB)

    Araújo, D.; Alegre, M. P.; Piñero, J. C. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Fiori, A.; Bustarret, E. [Institut Néel, CNRS-Université Joseph Fourier, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [Groupe d' Etude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  4. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  5. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  6. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  7. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  8. Boron-Based Layered Structures for Energy Storage

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y.; Wei, S. H.

    2012-01-01

    Based on Density Functional Theory simulations, we have studied the boron-based graphite-like materials, i.e., LiBC and MgB2 for energy storage. First, when half of the Li-ions in the LiBC are removed, the BC layered structure is still preserved. The Li intercalation potential (equilibrium lithium-insertion voltage of 2.3-2.4 V relative to lithium metal) is significantly higher than that in graphite, allowing Li0.5BC to function as a cathode material. The reversible electrochemical reaction, LiBC = Li0.5BC + 0.5Li, enables a specific energy density of 1088 Wh/kg and a volumetric energy density of 2463 Wh/L. Second, 75% of the Mg ions in MgB2 can be removed and reversibly inserted with the layered boron structures being preserved through an in-plane topological transformation between the hexagonal lattice domains and triangular domains. The mechanism of such a charge-driven transformation originates from the versatile valence state of boron in its planar form.

  9. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  10. Radiometric determination of boron with mandelic acid and zinc-65-labelled bis(1,10-phenanthroline)zinc(II)

    International Nuclear Information System (INIS)

    The use of solvent extraction methods for the radiometric determination of boron is scarce. This work was undertaken to examine the feasibility of an indirect radiometric method for the determination of trace amounts of boron by solvent extraction. Mandelic acid was used as the complexing agent for boron and the complex anion formed was extracted as an ion associate with zinc-65-labelled bis(1,10-phenanthroline)zinc(II) into isobutyl methyl ketone. The activity of zinc in the organic layer was measured using an NaI-Tl well-type scintillation detector, and was a linear function of the concentration of boron in the aqueous phase over the range 0-10 μg in a final volume of 15 ml. A detection limit of 0.25 μg of boron in a 15 ml aqueous volume could be achieved. The interfering effect of various ions was overcome by selective distillation of boron as methyl borate. The method was applied to the determination of boron in Cr-Mo-B alloy, ointments, talcum powder and eye lotion samples. The reliability of the proposed method was checked by comparing the results obtained for the above samples with those given by ICP-AES. (author)

  11. Boron carbide (B4C) coating. Deposition and testing

    Science.gov (United States)

    Azizov, E.; Barsuk, V.; Begrambekov, L.; Buzhinsky, O.; Evsin, A.; Gordeev, A.; Grunin, A.; Klimov, N.; Kurnaev, V.; Mazul, I.; Otroshchenko, V.; Putric, A.; Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A.

    2015-08-01

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B4C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B4C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B4C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B4C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  12. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  13. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  14. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  15. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  16. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  17. Determination of plant available boron in agricultural soil by using voltammetric method

    Directory of Open Access Journals (Sweden)

    Ebru Çetinkaya

    2014-08-01

    Full Text Available In this study, a novel voltammetric method has been developed to determine the amount of boron in soil. 50 soil samples were collected from 5 typical sites of agricultural area. After hot water extraction of available boron in the soil samples, all boron is complexed by addition of Alizarin Red S (ARS to the extraction solutions.Differential pulse anodic stripping voltammetry was used to determine the amount of the boron complexes. The electrochemical parameters have been optimized according to the experimental results. The optimum scan rate, stirring rate, deposition potential, deposition time and pH values were determined as 5 mVs-1 , 200 rpm, -0.5 V (vs. Ag/AgCl, sat., 15sec. and 7.5, respectively. An oxidation peak was occurred at the peak potential of -0.45 V for Boron-Alizarin complex. The limit of detection, limit of quantification and linear working range were determined for the voltammetric soil-boron analysis. In addition, the interference effects of coexisting ions were successfully investigated. Comparison of the analytical data for analyzing real samples was carried out between the differential pulse anodic stripping voltammetric method and the Azometine H spectrophotometric method have shown good agreement. A great advantage of voltammetry over the spectrophotometric method is found to be simplicity, selectivity and shortening of the analysis time.

  18. Surface analysis of VPS-W coatings boronized by an ICRF discharge in HT-7

    Energy Technology Data Exchange (ETDEWEB)

    Yang Zhongshi, E-mail: zsyang@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, PO. Box 1126, Hefei 230031 (China); Wang Wanjing [Institute of Plasma Physics, Chinese Academy of Sciences, PO. Box 1126, Hefei 230031 (China); Radiosicence Research Laboratory, Shizuoka University, 836 Oya, Shizuoka 422-8529 (Japan); Li Qiang; Wu Jing [Institute of Plasma Physics, Chinese Academy of Sciences, PO. Box 1126, Hefei 230031 (China); Okuno, Kenji; Oya, Yasuhisa [Radiosicence Research Laboratory, Shizuoka University, 836 Oya, Shizuoka 422-8529 (Japan); Luo Guangnan, E-mail: gnluo@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, PO. Box 1126, Hefei 230031 (China)

    2011-10-01

    To understand the surface compositions and the hydrogen isotope behavior in boronized Vacuum plasma spraying (VPS)-W, the boron coating has been achieved by means of Ion Cyclotron Radio Frequency (ICRF) boronization using carborane (C{sub 2}B{sub 10}H{sub 12}) powder as the precursor material in HT-7. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) were used to observe the morphology of the VPS-W and boronized W surfaces. The X-ray Photoelectron Spectroscopy (XPS) of W-4f, O-1s, C-1s and B-1s on the VPS-W sample before and after boronization and after plasma exposure have been measured. The B-B and B-C bonds were observed after boronization treatment for VPS-W. Thermal Desorption Spectroscopy (TDS) experiments were also carried out to investigate the thermal desorption behavior of D implanted into the samples. After HT-7 plasma exposure, the desorption spectrum had a low temperature peak associated with trapping in intrinsic defects in polycrystalline W and a high temperature peak associated with B-O-D and B-C-D bonds.

  19. Boron removal efficiency from Red Sea water using different SWRO/BWRO membranes

    KAUST Repository

    Rahmawati, Karina

    2012-12-01

    Seawater reverse osmosis (SWRO) desalination process provides high quality of fresh water. However, due to some operational constraints mainly scaling control some trace contaminant removal, such as acceptable boron concentration, cannot be achieved in a single pass SWRO system. The objective of this study was to investigate the efficiency of five difference reverse osmosis (RO) membranes (seawater SW and brackish water BW) provided by different manufacturers for boron removal. RO experiments using pretreated real Red Sea water were conducted in parallel to compare membrane performance under the same operating conditions. As expected, results showed that boron rejection increased as the feed pH increased. This was caused by dissociation of boric acid to negatively charged borate ions and more negatively charged membrane surface at elevated pH which enhanced boron rejection. Single pass RO system, with and without elevating the pH, may not be sufficient for two reasons. First, boron concentration in permeate does not fulfill local regulations (<0.5ppm). Second, severe scaling occurs due to operation in alkaline condition, since Ca 2+ and Mg 2+ concentrations are still high to cause salts precipitation. Techno-economical study was performed to select the best configuration and membrane giving the highest performance in terms of boron and TDS rejections and energy consumption. © 2012 Elsevier B.V.

  20. Delta-doping of boron atoms by photoexcited chemical vapor deposition

    International Nuclear Information System (INIS)

    Boron delta-doped structures in Si crystals were fabricated by means of photoexcited chemical vapor deposition (CVD). Core electronic excitation with high-energy photons ranging from vacuum ultraviolet to soft x rays decomposes B2H6 molecules into fragments. Combined with in situ monitoring by spectroscopic ellipsometry, limited number of boron hydrides can be delivered onto a Si(100) surface by using the incubation period before the formation of a solid boron film. The boron-covered surface is subsequently embedded in a Si cap layer by Si2H6 photo-excited CVD. The crystallinity of the Si cap layer depended on its thickness and the substrate temperature. The evaluation of the boron depth profile by secondary ion mass spectroscopy revealed that boron atoms were confined within the delta-doped layer at a concentration of 2.5 x 1020 cm-3 with a full width at half maximum of less than 9 nm, while the epitaxial growth of a 130-nm-thick Si cap layer was sustained at 420 deg. C.

  1. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  2. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  3. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  4. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan;

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  5. Jaguar Procedures for Detonation Behavior of Explosives Containing Boron

    Science.gov (United States)

    Stiel, L. I.; Baker, E. L.; Capellos, C.

    2009-12-01

    The Jaguar product library was expanded to include boron and boron containing products by analysis of Available Hugoniot and static volumetric data to obtain constants of the Murnaghan relationships for the components. Experimental melting points were also utilized to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX—boron mixtures calculated with these relationships using Jaguar are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that the boron does not react near the detonation front or that boron mixtures exhibit eigenvalue detonation behavior (as shown by some aluminized explosives), with higher detonation velocities at the initial points. Analyses of calorimetric measurements for RDX—boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the detonation properties of the formulation.

  6. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  7. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  8. Electrical Characteristics and Desorption Kinetics of Soil Boron

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The status and activities of boron in soils were studied by the approach of electro-ultrafiltration (EUF). The samples of soils, including brown-red soil and calcareous alluvial soil, were collected from Hubei Province of China. The soil samples were incubated in saturated water and then their nutrients were ultrafiltrated with EUF equipment. Filtration and extraction were conducted in accordance with routine process, but fractions in anode and cathode were all collected. Analyses of B, K+, Mg2+, Ca2+, C1- and pH in fractions supposed that boron existed not only in a simple form of borate but also in ion-pair with cations partly in acidic soil,and borate was the primary form existing in the calcareous soil. In studying desorption kinetics with EUF,the boron content of Fractions 2~6 was accumulated, and the accumulative quantities were fit to time factors in three kinetic equations: the zero-order, first-order, and arabolic diffusion equations. Fit degree of the parabolic diffusion equation was the best, followed by the zero-order quation, and the first-order equation was the worst.

  9. Study and optimization of boronization in Alcator C-Mod using the Surface Science Station (S{sup 3})

    Energy Technology Data Exchange (ETDEWEB)

    Ochoukov, Roman, E-mail: ochoukov@psfc.mit.edu [Plasma Science and Fusion Center MIT, NW17, 175 Albany Street, Cambridge, MA 02139 (United States); Whyte, Dennis; Lipschultz, Bruce; LaBombard, Brian [Plasma Science and Fusion Center MIT, NW17, 175 Albany Street, Cambridge, MA 02139 (United States); Gierse, Niels [Institute of Energy and Climate Research - Plasma Physics, Forschungszentrum Juelich GmbH, Association EURATOM-FZJ, Partner in the Trilateral Euregio Cluster, Juelich (Germany); Physikalisches Institut, Universitaet zu Koeln, D-50937 Cologne (Germany); Harrison, Soren [Fusion Research Technologies, 519 Somerville Avenue 243, Somerville, MA 02143 (United States)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Boron deposition profiles measured on Alcator C-Mod during boronization. Black-Right-Pointing-Pointer Boron deposition profile is consistent with ionic deposition. Black-Right-Pointing-Pointer Monte Carlo simulation of boron deposition agrees with experiment assuming warm ({approx}1-10 eV) boron{sup +1} ions. - Abstract: A Surface Science Station (S{sup 3}) on the Alcator C-Mod tokamak is used to study and optimize the location and rate of boron film deposition in situ during electron cyclotron (EC) discharge plasmas using 2.45 GHz radio-frequency (RF) heating and a mixture of helium and diborane (B{sub 2}D{sub 6}) gasses. The radial profile of boron deposition is measured with a pair of quartz microbalances (QMB) on S{sup 3}, the faces of which can be rotated 360 Degree-Sign including orientations parallel and perpendicular to the toroidal magnetic field B{sub T} {approx}0.1 T. The plasma electron density is measured with a Langmuir probe, also on S{sup 3} in the vicinity of the QMBs, and typical values are {approx}1 Multiplication-Sign 10{sup 16} m{sup -3}. A maximum boron deposition rate of 0.82 {mu}g/cm{sup 2}/min is obtained, which corresponds to 3.5 nm/min if the film density is that of solid boron. These deposition rates are sufficient for boron film applications between tokamak discharges. However the deposition does not peak at the EC resonance as previously assumed. Rather, deposition peaks near the upper hybrid (UH) resonance, {approx}5 cm outboard of the EC resonance. This has implications for RF absorption, with the RF waves being no longer damped on the electrons at the EC resonance. The previously inferred radial locations of critical erosion zones in Alcator C-Mod also need to be re-evaluated. The boron deposition profile versus major radius follows the ion flux/density profile, implying that the boron deposition is primarily ionic. The application of a vertical magnetic field (B{sub V} {approx}0.01 T) was

  10. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  11. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  12. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  13. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  14. Deep levels of nitrogen vacancies complexes in graphite-like boron nitride

    CERN Document Server

    Grinyaev, S N; Lopatin, V V

    2002-01-01

    Paper presents results of theoretical studies using methods of model pseudopotential and of extended elementary cell of deep levels of nitrogen vacancies, small clusters from di- and trivacancies of nitrogen covering nearest defects in one layer of graphite-like boron nitride. On the basis of calculated spectra and intensities of oscillators one interpreted local bands of optical absorption, luminescence, photoconductivity in pyrolytic boron nitride prior to and subsequent to irradiation by fast neutrons, protons and ions of carbon (50-150 keV). One identified not deep levels of activation of thermally stimulated luminescence and conductivity prior to and subsequent to irradiation

  15. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  16. Highly-focused boron implantation in diamond and imaging using the nuclear reaction 11B(p, α)8Be

    Science.gov (United States)

    Ynsa, M. D.; Ramos, M. A.; Skukan, N.; Torres-Costa, V.; Jakšić, M.

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm2 and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction 11B(p, α)8Be at Ep = 660 keV. This reaction has a high Q-value (8.59 MeV for α0 and 5.68 MeV for α1) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  17. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  18. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  19. Acid dissolution of soils and rocks for the determination of boron by inductively coupled plasma atomic emission spectrometry

    International Nuclear Information System (INIS)

    The boron concentration in rocks, soils and standard reference materials was determined using hydrofluoric acid-aqua regia dissolution followed by inductively coupled plasma atomic emission spectrometry (ICP-AES) using the B 1 249.773 -nm line, corrected for spectral interference by iron. An excess of fluoride was complexed with aluminium to release boron from the stable fluoroborate ion and to protect the borosilicate and quartz components of the instrument. Boron was not lost by volatilisation during volume reduction. Soil and rock boron values determined using the recommended dissolution procedures were comparable to those obtained using the accepted sodium carbonate fusion procedure and by d.c. arc emission spectrophotometry, and those for standard reference materials showed good agreement and precision with the literature values. (author)

  20. Boron water quality for the Plynlimon catchments

    Directory of Open Access Journals (Sweden)

    C. Neal

    1997-01-01

    Full Text Available Boron concentrations in rainfall, throughfall and stemflow for Spruce stands, mist, streamwater and groundwater are compared with chloride to assess atmospheric sources and catchment input-output balances for the Plynlimon catchments. In rainfall, boron concentration averages about 4.5 μg-B l-1 and approximately two thirds of this comes from anthropogenic sources. In through-fall and stemflow, boron concentrations are approximately a factor of ten times higher than in rainfall. This increase is associated with enhanced scavenging of mist and dry deposition by the trees. As the sampling sites were close to a forest edge, this degree of scavenging is probably far higher than in the centre of the forest. The throughfall and stemflow concentrations of boron show some evidence of periodic variations with time with peak concentrations occurring during the summer months indicating some vegetational cycling. In mist, boron concentrations are almost twenty times higher than in rainfall and anthropogenic sources account for about 86% of this. Within the Plynlimon streams, boron concentrations are about 1.4 to 1.7 times higher than in rainfall. However, after allowance for mist and dry deposition contributions to atmospheric deposition, it seems that, on average, about 30% of the boron input is retained within the catchment. For the forested catchments, felling results in a disruption of the biological cycle and a small increase in boron leaching from the catchment results in the net retention by the catchment being slightly reduced. Despite the net uptake by the catchment, there is clear evidence of a boron component of weathering from the bedrock. This is shown by an increased boron concentration in a stream influenced by a nearby borehole which increased groundwater inputs. The weathering component for boron is also observed in Plynlimon groundwaters as boron concentrations and boron to chloride ratios are higher than for the streams. For these

  1. Growth and electrical characterisation of {delta}-doped boron layers on (111) diamond surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Edgington, Robert; Jackman, Richard B. [London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH (United Kingdom); Sato, Syunsuke; Ishiyama, Yuichiro; Kawarada, Hiroshi [Department of Electronic and Photonic Systems, Waseda University, Okubo 3-4-1, Shinjuku, Tokyo 169-8555 (Japan); Morris, Richard [Advanced SIMS Projects, Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2012-02-01

    A plasma enhanced chemical vapor deposition protocol for the growth of {delta}-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10{sup 20} cm{sup -3}.

  2. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2004-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide powder and pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Total Carbon by Combustion and Gravimetry 7-17 Total Boron by Titrimetry 18-28 Isotopic Composition by Mass Spectrometry 29-38 Chloride and Fluoride Separation by Pyrohydrolysis 39-45 Chloride by Constant-Current Coulometry 46-54 Fluoride by Ion-Selective Electrode 55-63 Water by Constant-Voltage Coulometry 64-72 Impurities by Spectrochemical Analysis 73-81 Soluble Boron by Titrimetry 82-95 Soluble Carbon by a Manometric Measurement 96-105 Metallic Impurities by a Direct Reader Spectrometric Method 106-114

  3. Growth of boric acid crystallites on the surface of boron-doped silicon carbide samples

    International Nuclear Information System (INIS)

    White crystallites were visually observed on fractured or polished surfaces of SiC samples (grain sizes below ∼500 nm) during exposure to air at room temperature for several days. Characterization of the crystallites by scanning electron microscopy, secondary ion mass spectroscopy, and X-ray diffraction identified B(OH)3 crystals with a strong (002) texture. The rate of boric acid formation was determined by a gravimetric experiment. The rate of weight gain increased significantly after an incubation period of 1 week. Nucleation is initially the rate-limiting process. Subsequently small B(OH)3 crystals form on the surface, whose growth rate is determined by grain boundary diffusion of boron to the SiC surface. An estimated grain boundary boron to the SiC surface. An estimated grain boundary diffusion coefficient of boron in SiC was many orders of magnitude higher than extrapolated literature values

  4. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  5. Caborane beam from ITEP Bernas ion source for semiconductor implanters

    Energy Technology Data Exchange (ETDEWEB)

    Seleznev, D.; Hershcovitch, A.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Koshelev, V.; Kulevoy, T.; Jonson, B.; Poole, J.; Alexeyenko, O.; Gurkova, E.; Oks, E.; Gushenets, V.; Polozov, S.; Masunov, E.

    2010-02-01

    A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C{sub 2}B{sub 10}H{sub 12}) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

  6. Evaluation of unnatural cyclic amino acids as boron delivery agents for treatment of melanomas and gliomas

    International Nuclear Information System (INIS)

    Unnatural cyclic amino acids (UNAAs) are a new class of boron delivery agents that are in a pre-clinical stage of evaluation. In the present study, the biodistribution of racemic forms of the cis- and trans-isomers of the boronated UNAA 1-amino-3-boronocyclopentanecarboxylic acid (ABCPC) and 1-amino-3-boronocycloheptanecarboxylic acid (ABCHC) were evaluted in B16 melanoma bearing mice and this was compared to L-p-boronophenylalanine (BPA). Boron concentrations were determined by inductively coupled plasma-optical emission spectroscopy (ICP-OES) at 2.5 h following intraperitoneal (i.p.) injection of the test agents at a concentration equivalent to 24 mg/B/kg. While all compounds attained comparable tumor boron concentrations, the tumor/blood (T/Bl) boron concentration ratios were far superior for both cis-ABCPC and cis-ABCHC compared to BPA (T/Bl=16.4, and 15.1 vs. 5.4). Secondary ion mass spectrometry (SIMS) imaging revealed that the cis-ABCPC delivered boron to the nuclei, as well as the cytoplasm of B16 cells. Next, a biodistribution study of cis-ABCPC and BPA was carried out in F98 glioma bearing rats following i.p. administration. Both compounds attained comparable tumor boron concentrations but the tumor/brain (T/Br) boron ratio was superior for cis-ABCPC compared to BPA (6 vs. 3.3). Since UNAAs are water soluble and cannot be metabolized by tumor cells, they could be potentially more effective boron delivery agents than BPA. Our data suggest that further studies are warranted to evaluate these compounds prior to the initiation of clinical studies. - Highlights: • Unnatural cyclic amino acids (UNAAs) are a new class of boron delivery agents for neutron capture therapy. • ABCPC and ABCHC attained higher tumor/blood ratios vs. BPA in B16 melanoma bearing mice. • The tumor/brain ratio of cis-ABCPC was superior to BPA (6 vs. 3.3) suggesting that further studies are warranted

  7. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  8. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration nc for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm-1) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance gc. The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  9. XPS, SIMS and FTIR-ATR characterization of boronized graphite from the thermonuclear plasma device RFX-mod

    Science.gov (United States)

    Ghezzi, F.; Laguardia, L.; Caniello, R.; Canton, A.; Dal Bello, S.; Rais, B.; Anderle, M.

    2015-11-01

    In this paper the characterization of a thin (tens of nanometers) boron layer on fine grain polycrystalline graphite substrate is presented. The boron film is used as conditioning technique for the full graphite wall of the Reversed Field eXperiment-modified (RFX-mod) experiment, a device for the magnetic confinement of plasmas of thermonuclear interest. Aim of the present analysis is to enlighten the chemical structure of the film, the trapping mechanism that makes it a getter for oxygen and hydrogen and the reason of its loss of effectiveness after exposure to about 100 s of hydrogen plasma. X-ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS) and Fourier Transform Infra Red spectroscopy in combination with the Attenuated Total Reflectance (FTIR-ATR) were used to obtain the structure and the chemical composition of graphitic samples as coated or coated and subsequently exposed to hydrogen plasma after boron deposition. The boron layers on the only coated samples were found to be amorphous hydrogenated boron carbide plus a variety of bonds like B-B, B-H, B-O, B-OH, C-C, C-H, C-O, C-OH. Both the thickness and the homogeneity of the layers were found to depend on the distance of the sample from the anode during the deposition. The samples contained oxygen along the layer thickness, at level of 5%, bound to boron. The gettering action of the boron is therefore already active during the deposition itself. The exposure to plasma caused erosion of the boron film and higher content of H and O bound to boron throughout the whole thickness. The interaction of the B layer with plasma is therefore a bulk phenomenon.

  10. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  11. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  12. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  13. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  14. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  15. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Stuckelberger, M.; Park, B.-S.; Bugnon, G.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2015-11-01

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200 °C. To investigate this limitation and to show potential paths to overcome it, we deposited high-efficiency a-Si:H solar cells, varying the deposition temperatures of the p-type and the intrinsic absorber (i) layers between 150 and 250 °C. Using secondary ion mass spectroscopy, we study dedicated stacks of i-p-i layers deposited at different temperatures. This allows us to track boron diffusion at the p-i and i-p interfaces as they occur in the p-i-n and n-i-p configurations of a-Si:H solar cells for different deposition conditions. Finally, we prove step-by-step that the common explanation for boron tailing—boron diffusion from the p layer into the i layer leading to enhanced recombination—is not generally true and propose an alternative explanation for the experimentally observed drop in the external quantum efficiency at short wavelengths.

  16. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    International Nuclear Information System (INIS)

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200 °C. To investigate this limitation and to show potential paths to overcome it, we deposited high-efficiency a-Si:H solar cells, varying the deposition temperatures of the p-type and the intrinsic absorber (i) layers between 150 and 250 °C. Using secondary ion mass spectroscopy, we study dedicated stacks of i-p-i layers deposited at different temperatures. This allows us to track boron diffusion at the p-i and i-p interfaces as they occur in the p-i-n and n-i-p configurations of a-Si:H solar cells for different deposition conditions. Finally, we prove step-by-step that the common explanation for boron tailing—boron diffusion from the p layer into the i layer leading to enhanced recombination—is not generally true and propose an alternative explanation for the experimentally observed drop in the external quantum efficiency at short wavelengths

  17. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stuckelberger, M., E-mail: michael.stuckelberger@alumni.ethz.ch; Bugnon, G.; Despeisse, M.; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71, CH-2000 Neuchâtel (Switzerland); Park, B.-S. [SIMS Services, Evans Analytical Group, 810 Kifer Road, Sunnyvale, California 94086 (United States)

    2015-11-16

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200 °C. To investigate this limitation and to show potential paths to overcome it, we deposited high-efficiency a-Si:H solar cells, varying the deposition temperatures of the p-type and the intrinsic absorber (i) layers between 150 and 250 °C. Using secondary ion mass spectroscopy, we study dedicated stacks of i-p-i layers deposited at different temperatures. This allows us to track boron diffusion at the p-i and i-p interfaces as they occur in the p-i-n and n-i-p configurations of a-Si:H solar cells for different deposition conditions. Finally, we prove step-by-step that the common explanation for boron tailing—boron diffusion from the p layer into the i layer leading to enhanced recombination—is not generally true and propose an alternative explanation for the experimentally observed drop in the external quantum efficiency at short wavelengths.

  18. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  19. Boronated mesophase pitch coke for lithium insertion

    Science.gov (United States)

    Frackowiak, E.; Machnikowski, J.; Kaczmarska, H.; Béguin, F.

    Boronated carbons from mesophase pitch have been used as materials for lithium storage in Li/carbon cells. Doping by boron has been realized by co-pyrolysis of coal tar pitch with the pyridine-borane complex. Amount of boron in mesocarbon microbeads (MCMB) varied from 1.4 to 1.8 wt.% affecting the texture of carbon. Optical microscopy and X-ray diffractograms have shown tendency to more disordered structure for boron-doped carbon. The values of specific reversible capacity ( x) varied from 0.7 to 1.1 depending significantly on the final temperature of pyrolysis (700-1150°C). The optimal charge/discharge performance was observed for boronated carbon heated at 1000°C.

  20. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  1. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  2. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  3. The Influence of Nitrogen and Boron Implant into Silicon Substrate on the Phase and Internal Stress of c-BN Films

    Institute of Scientific and Technical Information of China (English)

    TAN Jun; CAI Zhi-hai; ZHANG Ping

    2004-01-01

    Cubic boron nitride(c-BN) film was deposited on a Si (100) substrate by the RF-magnetron sputtering.The mainly problems for fabrication of c-BN films are the low purity and high intrinsic compressive stress. In order to solve the two problems, the c-BN film with the buffer interlayer was deposited on the substrate which had been implanted with nitrogen and/or boron ions. The results show: the implantation of nitrogen ions can obviously increase c-BN content and reduce the internal stress slightly; while the implantation of boron shows no obvious improvement to the content of c-BN, which can reduce the internal stress in the film obviously. In addition, it is suggested that the implantation of nitrogen and boron shows the best result, which not only can increase the content of c-BN, but also reduce the internal stress in the c-BN film obviously.

  4. Intra-Shell boron isotope ratios in benthic foraminifera: Implications for paleo-pH reconstructions

    Science.gov (United States)

    Rollion-Bard, C.; Erez, J.

    2009-12-01

    The boron isotope composition of marine carbonates is considered to be a seawater pH proxy. Nevertheless, the use of δ11B has some limitations: 1) the knowledge of fractionation factor (α4-3) between the two boron dissolved species (boric acid and borate ion), 2) the δ11B of seawater may have varied with time and 3) the amplitude of the "vital effects" of this proxy. Using secondary ion mass spectrometry (SIMS), we looked at the internal variability in the boron isotope ratio of the shallow water, symbionts bearing foraminiferan Amphistegina lobifera. Specimens were cultured at constant temperature (24±0.1 °C) in seawater with pH ranging between 7.90 and 8.45. We performed 6 to 8 measurements of δ11B in each foraminifera. Intra-shell boron isotopes show large variability with an upper threshold value of pH ~ 9. The ranges of the skeletal calculated pH values in different cultured foraminifera, show strong correlation with the culture pH values and may thus serve as proxy for pH in the past ocean.

  5. Boron nanoparticles inhibit turnour growth by boron neutron capture therapy in the murine B16-OVA model

    DEFF Research Database (Denmark)

    Petersen, Mikkel Steen; Petersen, Charlotte Christie; Agger, Ralf;

    2008-01-01

    Background: Boron neutron capture therapy usually relies on soluble, rather than particulate, boron compounds. This study evaluated the use of a novel boron nanoparticle for boron neutron capture therapy. Materials and Methods: Two hundred and fifty thousand B16-OVA tumour cells, pre...

  6. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  7. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  8. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schrof, Julian, E-mail: julian.schrof@ise.fraunhofer.de; Müller, Ralph; Benick, Jan; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg (Germany); Reedy, Robert C. [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-07-28

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after

  9. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    Science.gov (United States)

    Schrof, Julian; Müller, Ralph; Reedy, Robert C.; Benick, Jan; Hermle, Martin

    2015-07-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3

  10. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    International Nuclear Information System (INIS)

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3

  11. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  12. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  13. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    The goal of this research was to determine the composition of boron deposits produced by pyrolysis of boron tribromide, and to use the results to (a) determine the experimental conditions (reaction temperature, etc.) necessary to produce alpha-rhombohedral boron and (b) guide the development/refinement of the pyrolysis experiments such that large, high purity crystals of alpha-rhombohedral boron can be produced with consistency. Developing a method for producing large, high purity alpha-rhombohedral boron crystals is of interest because such crystals could potentially be used to achieve an alpha-rhombohedral boron based neutron detector design (a solid-state detector) that could serve as an alternative to existing neutron detector technologies. The supply of neutron detectors in the United States has been hampered for a number of years due to the current shortage of helium-3 (a gas used in many existing neutron detector technologies); the development of alternative neutron detector technology such as an alpha-rhombohedral boron based detector would help provide a more sustainable supply of neutron detectors in this country. In addition, the prospect/concept of an alpha-rhombohedral boron based neutron detector is attractive because it offers the possibility of achieving a design that is smaller, longer life, less power consuming, and potentially more sensitive than existing neutron detectors. The main difficulty associated with creating an alpha-rhombohedral boron based neutron detector is that producing large, high purity crystals of alpha-rhombohedral boron is extremely challenging. Past researchers have successfully made alpha-rhombohedral boron via a number of methods, but no one has developed a method for consistently producing large, high purity crystals. Alpha-rhombohedral boron is difficult to make because it is only stable at temperatures below around 1100-1200 °C, its formation is very sensitive to impurities, and the conditions necessary for its

  14. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu. [High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S. [Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Dugin, S.; Alexeyenko, O. [State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow (Russian Federation)

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  15. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Science.gov (United States)

    Chaudhari, Pradip; Singh, Arvind; Topkar, Anita; Dusane, Rajiv

    2015-04-01

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 μm and 0.5 μm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  16. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Pradip, E-mail: pradipcha@gmail.com [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India); Singh, Arvind, E-mail: arvindsingh1884@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Topkar, Anita, E-mail: anita.topkar@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Dusane, Rajiv, E-mail: rodusane@iitb.ac.in [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)

    2015-04-11

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and {sup 10}B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  17. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    International Nuclear Information System (INIS)

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors

  18. Synthesis of Boron Nanorods by Smelting Non-Toxic Boron Oxide in Liquid Lithium

    OpenAIRE

    Amartya Chakrabarti; Tao Xu; Laura K. Paulson; Krise, Kate J.; Maguire, John A; Hosmane, Narayan S.

    2010-01-01

    In contrast to the conventional bottom-up syntheses of boron nanostructures, a unique top-down and greener synthetic strategy is presented for boron nanorods involving nontoxic boron oxide powders ultrasonically smelted in liquid lithium under milder conditions. The product was thoroughly characterized by energy dispersive X-ray analysis, atomic emission spectroscopy, thermogravimetric analysis and, UV-Vis spectroscopy, including structural characterization by transmission electron microscop...

  19. Developments in boron magnetic resonance imaging (MRI)

    Energy Technology Data Exchange (ETDEWEB)

    Schweizer, M.

    1995-11-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain.

  20. First boronization in KSTAR: Experiences on carborane

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Suk-Ho, E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Kun-Su; Kim, Kwang-Pyo; Kim, Kyung-Min; Kim, Hong-Tack [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, Jong-Ho; Woo, Hyun-Jong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Park, Jae-Min [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Park, Eun-Kyong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Woong-Chae; Kim, Hak-Kun; Park, Kap-Rai; Yang, Hyung-Lyeol; Oh, Yeong-Kook; Na, Hoon-Kyun [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Lho, Taehyeop [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, Kyu-Sun [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    First boronization was performed in KSTAR tokamak during 2009 campaign in order to reduce oxygen impurities and to lower the power loss due to radiation. We report the results from the experiences on carborane during the first boronization in KSTAR. After the boronization, H{sub 2}O and O{sub 2} level in the vacuum vessel are reduced significantly. The characteristics of the deposited thin films were analyzed by variable angle spectroscopic ellipsometry, XPS, and AES. {approx}1.78 x 10{sup 16} cm{sup -2} s{sup -1} of carbon flux on the wall is estimated by using cavity technique.

  1. From Boron Cluster to Two-Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation

    OpenAIRE

    Hongsheng Liu; Junfeng Gao; Jijun Zhao

    2013-01-01

    As attractive analogue of graphene, boron monolayers have been theoretically predicted. However, due to electron deficiency of boron atom, synthesizing boron monolayer is very challenging in experiments. Using first-principles calculations, we explore stability and growth mechanism of various boron sheets on Cu(111) substrate. The monotonic decrease of formation energy of boron cluster BN with increasing cluster size and low diffusion barrier for a single B atom on Cu(111) surface ensure cont...

  2. Development of a microwave ion source for ion implantations

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, N., E-mail: Nbk-Takahashi@shi.co.jp; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T. [Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)

    2016-02-15

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

  3. Boron-Filled Hybrid Carbon Nanotubes.

    Science.gov (United States)

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  4. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  5. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  6. Spectromicroscopy in Boron Neutron Capture Therapy Research

    Science.gov (United States)

    Gilbert, Benjamin; Redondo, Jose; Andres, Roger; Suda, Takashi; Neumann, Michael; Steen, Steffi; Gabel, Detlef; Mercanti, Delio; Ciotti, Teresa; Perfetti, Paolo; Margaritondo, Giorgio; de Stasio, Gelsomina

    1998-03-01

    The MEPHISTO synchrotron imaging spectromicroscope can analyse ashed cells or tissue sections to reveal the microdistribution of trace elements. MEPHISTO performs core level x-ray absorption spectroscopy with synchrotron radiation, and uses an electron optics system to provide magnified photoelectron images. An application of the MEPHISTO spectromicroscope is in boron neutron capture therapy (BNCT). BNCT is a binary cancer therapy that will selectively destroy cancer cells provided that compounds containing a boron isotope are selectively accumulated in tumor tissue. Important factors for the success of BNCT include the ability to target every cancer cell, and the distribution of boron inside the cell. To investigate the boron distribution in tissue, sections of human glioblastoma containing a BNCT compound, and stained with nickel against a protein found in the nuclei of proliferating (cancer) cells, were studied with MEPHISTO.

  7. High temperature thermoelectric properties of boron carbide

    International Nuclear Information System (INIS)

    Boron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (∼1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200 degrees C) and for preparing n-type materials is discussed

  8. Boron-Filled Hybrid Carbon Nanotubes

    Science.gov (United States)

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  9. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  10. Lithium-Beryllium-Boron : Origin and Evolution

    OpenAIRE

    Vangioni-Flam, Elisabeth; Casse, Michel; Audouze, Jean

    1999-01-01

    The origin and evolution of Lithium-Beryllium-Boron is a crossing point between different astrophysical fields : optical and gamma spectroscopy, non thermal nucleosynthesis, Big Bang and stellar nucleosynthesis and finally galactic evolution. We describe the production and the evolution of Lithium-Beryllium-Boron from Big Bang up to now through the interaction of the Standard Galactic Cosmic Rays with the interstellar medium, supernova neutrino spallation and a low energy component related to...

  11. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  13. Inheritance of Boron Efficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    SHI Lei; WANG Yun-Hua; NIAN Fu-Zhao; LU Jian-Wei; MENG Jin-Ling; XU Fang-Sen

    2009-01-01

    Field experiments were conducted to study the inheritance of boron efficiency in oilseed rape (Brassica napus L.) by evaluating the boron (B) efficiency coefficient (BEC,the ratio of the seed yield at below the critical boron level to that at the boron-sufficient level) with 657 F2:3 fines of a population derived from a cross between a B-efficient cultivar,Qingyou 10,and a B-inefficient cultivar,Bakow.Qingyou i0 had high BEC as well as high seed yield at low available soil B.On the contrary,Bakow produced low seed yield at low B status.Boron deficiency decreased the seed yield of the F2:3 lines to different extents and the distribution of BEC of the population showed a bimodal pattern.When the 657 F2:3 lines were grouped into B-efficient lines and B-inefficient lines according to their BEC,the ratio of B-efficient lines to B-inefficient lines fitted the expected ratio (3:1),indicating that one major gene controlled the B-efficiency trait.127 F2:3 lines selected from the population at random,with distribution of BEC similar to that of the overall population,were used to identify the target region for fine mapping of the boron efficiency gene.

  14. Boronization of Russian tokamaks from carborane precursors

    International Nuclear Information System (INIS)

    A new and cheap boronization technique using the nontoxic and nonexplosive solid substance carborane has been developed and successfully applied to the Russian tokamaks T-11M, T-3M, T-10 and TUMAN-3. The glow discharge in a mixture of He and carborane vapor produced the amorphous B/C coating with the B/C ratio varied from 2.0-3.7. The deposition rate was about 150 nm/h. The primary effect of boronization was a significant reduction of the impurity influx and the plasma impurity contamination, a sharp decrease of the plasma radiated power, and a decrease of the effective charge. Boronization strongly suppressed the impurity influx caused by additional plasma heating. ECR- and ICR-heating as well as ECR current drive were more effective in boronized vessels. Boronization resulted in a significant extension of the Ne- and q-region of stable tokamak operation. The density limit rose strongly. In Ohmic H-mode energy confinement time increased significantly (by a factor of 2) after boronization. It rose linearly with plasma current Ip and was 10 times higher than Neo-Alcator time at maximum current. ((orig.))

  15. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 105 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  16. Removal of Aqueous Boron by Using Complexation of Boric Acid with Polyols: A Raman Spectroscopic Study

    Energy Technology Data Exchange (ETDEWEB)

    Eom, Ki Heon; Jeong, Hui Cheol; An, Hye Young; Lim, Jun-Heok; Lee, Jea-Keun; Won, Yong Sun [Pukyong National University, Busan (Korea, Republic of)

    2015-12-15

    Boron is difficult to be removed from seawater by simple RO (reverse osmosis) membrane process, because the size of boric acid (B(OH){sub 3}), the major form of aqueous boron, is as small as the nominal pore size of RO membrane. Thus, the complexation of boric acid with polyols was suggested as an alternative way to increase the size of aqueous boron compounds and the complexation behavior was investigated with Raman spectroscopy. As a reference, the Raman peak for symmetric B-O stretching vibrational mode both in boric acid and borate ion (B(OH){sub 4}{sup -}) was selected. A Raman peak shift (877 cm{sup -1} →730 cm{sup -1}) was observed to confirm that boric acid in water is converted to borate ion as the pH increases, which is also correctly predicted by frequency calculation. Meanwhile, the Raman peak of borate ion (730 cm{sup -1}) did not appear as the pH increased when polyols were applied into aqueous solution of boric acid, suggesting that the boric acid forms complexing compounds by combining with polyols.

  17. Two-dimensional boron nitride structures functionalization: first principles studies.

    Science.gov (United States)

    Ponce-Pérez, R; Cocoletzi, Gregorio H; Takeuchi, Noboru

    2016-09-01

    Density functional theory calculations have been performed to investigate two-dimensional hexagonal boron nitride (2D hBN) structures functionalization with organic molecules. 2x2, 4x4 and 6x6 periodic 2D hBN layers have been considered to interact with acetylene. To deal with the exchange-correlation energy the generalized gradient approximation (GGA) is invoked. The electron-ion interaction is treated with the pseudopotential method. The GGA with the Perdew-Burke-Ernzerhoff (PBE) functionals together with van der Waals interactions are considered to deal with the composed systems. To investigate the functionalization two main configurations have been explored; in one case the molecule interacts with the boron atom and in the other with the nitrogen atom. Results of the adsorption energies indicate chemisorption in both cases. The total density of states (DOS) displays an energy gap in both cases. The projected DOS indicate that the B-p and N-p orbitals are those that make the most important contribution in the valence band and the H-s and C-p orbitals provide an important contribution in the conduction band to the DOS. Provided that the interactions of the acetylene with the 2D layer modify the structural and electronic properties of the hBN the possibility of structural functionalization using organic molecules may be concluded. PMID:27566317

  18. Salt rejection and water transport through boron nitride nanotubes.

    Science.gov (United States)

    Hilder, Tamsyn A; Gordon, Daniel; Chung, Shin-Ho

    2009-10-01

    Nanotube-based water-purification devices have the potential to transform the field of desalination and demineralization through their ability to remove salts and heavy metals without significantly affecting the fast flow of water molecules. Boron nitride nanotubes have shown superior water flow properties compared to carbon nanotubes, and are thus expected to provide a more efficient water purification device. Using molecular dynamics simulations it is shown that a (5, 5) boron nitride nanotube embedded in a silicon nitride membrane can, in principle, obtain 100% salt rejection at concentrations as high as 1 M owing to a high energy barrier while still allowing water molecules to flow at a rate as high as 10.7 water molecules per nanosecond (or 0.9268 L m(-2) h(-1)). Furthermore, ions continue to be rejected under the influence of high hydrostatic pressures up to 612 MPa. When the nanotube radius is increased to 4.14 A the tube becomes cation-selective, and at 5.52 A the tube becomes anion-selective. PMID:19582727

  19. Electron microscopy study of radiation effects in boron carbide

    International Nuclear Information System (INIS)

    Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 17000C was an important technical part of this work

  20. Synthesis and properties of low-carbon boron carbides

    International Nuclear Information System (INIS)

    This paper reports on the production of boron carbides of low carbon content (3 and CCl4 at 1273-1673 K in a chemical vapor deposition (CVD) reactor. Transmission electron microscopy (TEM) revealed that phase separation had occurred, and tetragonal boron carbide was formed along with β-boron or α-boron carbide under carbon-depleted gas-phase conditions. At temperatures greater than 1390 degrees C, graphite substrates served as a carbon source, affecting the phases present. A microstructure typical of CVD-produced α-boron carbide was observed. Plan view TEM of tetragonal boron carbide revealed a blocklike structure

  1. Geochemical study of boron isotopes in the process of loess weathering

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Zhiqi; (

    2003-01-01

    [1]Palmer, M. R., Swihart, G. H., Boron isotope geochemistry: An overview, in Rev. Mineral 33, Boron Mineralogy, Petrology and Geochemistry (eds. Grew, E. S., Anovitz, L. M.), Washington, D. C.: Mineral Soc. Am., 1996, 709-744.[2]Chaussidon, M., Albarède, F., Secular boron isotope variations in the continental crust: An ion microprobe study, Earth Planet Sci. Lett., 1992, 108: 229-241.[3]Spivack, A. J., Edmond, J. M., Boron isotope exchange between seawater and the oceanic crust, Geochim. Cosmochim. Acta, 1987, 51: 1033-1043.[4]Vengosh, A., Chivas, A. R., Mcculloch, M. T. et al., Boron isotope geochemistry of Australian salt lakes, Geochim. Cosmochim. Acta, 1991, 55: 2591-2606.[5]Xiao, Y. K., Sun, D. P., Wang, Y. H. et al., Boron isotopic compositions of brine, sediments and source water in Da Qaidam Lake, Qinghai, China, Geochim Cosmochim Acta, 1992,56: 1561-1568.[6]Mcmullen, C. C., Cragg, C. B., Thode, H. G., Absolute rations of 11B/10B in Searles Lake borax, Geochim. Cosmochim. Acta, 1961, 23: 147-150.[7]Palmer, M. R., Sturchio, N. C., The boron isotope systematics of the Yellowstone National Park (Wyoming) hydrothermal system: A reconnaissance, Geochim. Cosmochim. Acta, 1990, 54: 2811-2815.[8]Arndsson, S., Andrèsdèttir, A., Processes controlling the distribution of boron and chlorine in natural waters in Iceland, Geochim. Cosmochim. Acta, 1995, 59: 4125-4146.[9]Aggarwal, J. K., Palmer, M. R., Bullen, T. D. et al., The boron isotope systematics of Iceland geothermal waters: 1. Meteoric water charged systems, Geochim. Cosmochim. Acta, 2000, 64: 579-585.[10]Spivack, A. J., Palmer, M. R., Edmond, J. M., The sedimentary cycle of the boron isotopes, Geochim. Cosmochim. Acta, 1987, 51: 1939-1949.[11]Liu Yingjun, Cao Liming, Li Zhaolin et al., Element Geochemistry (in Chinese), Beijing: Science Press, 1984, 422-428.[12]Schwarcz, H. P., Agyei, E. K., Mcmullen, C. C., Boron isotopic fractionation during clay adsorption

  2. Current Progress of Capacitive Deionization for Removal of Pollutant Ions

    Science.gov (United States)

    Gaikwad, Mahendra S.; Balomajumder, Chandrajit

    2016-08-01

    A mini review of a recently developing water purification technology capacitive deionization (CDI) applied for removal of pollutant ions is provided. The current progress of CDI for removal of different pollutant ions such as arsenic, fluoride, boron, phosphate, lithium, copper, cadmium, ferric, and nitrate ions is presented. This paper aims at motivating new research opportunities in capacitive deionization technology for removal of pollutant ions from polluted water.

  3. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    Science.gov (United States)

    Gilbert, B.; Redondo, J.; Baudat, P.-A.; Lorusso, G. F.; Andres, R.; Van Meir, E. G.; Brunet, J.-F.; Hamou, M.-F.; Suda, T.; Mercanti, Delio; Ciotti, M. Teresa; Droubay, T. C.; Tonner, B. P.; Perfetti, P.; Margaritondo, M.; DeStasio, Gelsomina

    1998-10-01

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of ? in tumour cells after injection of a boron compound (in our case ?, or BSH). With the Mephisto (microscope à emission de photoélectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy.

  4. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, B.; Redondo, J.; Baudat, P-A. [Institut de Physique Appliquee, Ecole Polytechnique Federale, Lausanne (Switzerland)] [and others

    1998-10-07

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of {sup 10}B in tumour cells after injection of a boron compound (in our case B{sub 12}H{sub 11}SH, or BSH). With the Mephisto (microscope a emission de photoelectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy. (author)

  5. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  6. Chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    Aluminum oxide pellets are used in a reactor core as filler or spacers within fuel, burnable poison, or control rods. In order to be suitable for this purpose, the material must meet certain criteria for impurity content. The test methods in the standard are designed to show whether or not a given material meets these specifications. The following analytical procedures are described in detail: boron by titrimetry; separation of boron by mass spectrometry; isotopic composition by mass spectrometry; separation of halides by pyrohydrolysis; fluoride by ion-selective electrode; chloride, bromide, and iodide by amperometric microtitrimetry; trace elements by emission spectroscopy. (JMT)

  7. The energy landscape of fullerene materials: a comparison between boron, boron-nitride and carbon

    CERN Document Server

    De, Sandip; Amsler, Maximilian; Pochet, Pascal; Genovese, Luigi; Goedecker, Stefan

    2010-01-01

    Using the minima hopping global geometry optimization method on the density functional potential energy surface we study medium size and large boron clusters. Even though for isolated medium size clusters the ground state is a cage like structure they are unstable against external perturbations such as contact with other clusters. The energy landscape of larger boron clusters is glass like and has a large number of structures which are lower in energy than the cages. This is in contrast to carbon and boron nitride systems which can be clearly identified as structure seekers in our minima hopping runs. The differences in the potential energy landscape explain why carbon and boron nitride systems are found in nature whereas pure boron fullerenes have not been found.

  8. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  9. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-10-22

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

  10. ICRF Impurity Behavior with Boron Coated Molybdenum Tiles in Alcator C-Mod

    International Nuclear Information System (INIS)

    Full text: Although ion cyclotron range of frequency (ICRF) heating is considered an excellent candidate for bulk heating, minimizing impurity production associated with ICRF operation, particularly with metallic plasma facing components (PFC), remains one of the primary challenges for ICRF utilization. In C-Mod and present experiments, boronization, an in-situ applied boron film, is utilized to control impurities and its effectiveness has a limited lifetime. In C-Mod, the lifetime has been observed to be proportional to integrated injected RF Joules and the degradation is faster than in equivalent ohmic heated discharges the ICRF is enhancing the erosion rate of the boron film. In an effort to identify important erosion and impurity source locations, we have vacuum plasma sprayed ∼ 100 microns of boron on molybdenum tiles from the outer divertor shelf, main plasma limiters, and the RF antennas. We have also modified the shape of the main plasma limiter and increased our spectroscopic monitoring diagnostics of the main plasma limiter. Finally, we have installed a set of probes to monitor the plasma potential and RF fields on field lines connected an antenna. For ICRF heated H-modes, the core molybdenum levels was significantly reduced and remained at low levels for increased integrated injected RF Joules. The core molybdenum levels also no longer scales with RF power in L-mode in contrast with previous results with boronization and molybdenum plasma facing components. Initial Post campaign analysis of the boron coating will also be presented. Boronization and impurity, typically nitrogen or neon, seeded discharges enabled high plasma and ICRF antenna performance. The boronization suggests that other impurity sources are important but are yet to be identified. Impurity seeding had two important effects: reduced core molybdenum levels and suppressed antenna faults due to arcs and injections from antenna structure. The lower core molybdenum level is surprising since

  11. Plasma deposition of boron films with high growth rate and efficiency using carborane

    International Nuclear Information System (INIS)

    The injection of carborane (C2B10H12) on the PISCES-B linear plasma device has been used to produce boron containing films on various target species. Film growth rates achieved are extremely high (up to 30 nm/s) compared to those typically found for glow discharges (∼0.01 nm/s). For low-Z target materials (C and Al) the film production is highly efficient, with the boron film growth rate comparable to the incident ion flux and the injection rate of boron atoms. The boron to carbon ratio is 3.0-3.6 for these films. Similarly high growth rates (∼10 nm/s) are obtained with high-Z target (W), but with lower deposition efficiency and higher B/C film ratio. The high film growth rate/efficiency are apparently linked to the high degree of carborane ionization and dissociation caused by the ∼40 eV PISCES-B plasma, compared with T<1 eV plasmas of glow discharges. This technique opens the possibility of continuously producing protective B films in thermonuclear devices where net erosion rates approach 10 nm/s

  12. Characteristics of Boron Decorated TiO2 Nanoparticles for Dye-Sensitized Solar Cell Photoanode

    Directory of Open Access Journals (Sweden)

    Ching-Yuan Ho

    2015-01-01

    Full Text Available Different boron weight percents on mixed-phase (anatase and rutile TiO2 nanoparticles were synthesized to investigate structure morphology, defect states, luminescence properties, and energy conversion. The measured results indicate that boron doping of TiO2 both increases the crystallite size and rutile-phase percent in an anatase matrix. Decreasing the band gap by boron doping can extend the absorption to the visible region, while undoped TiO2 exhibits high UV absorption. Oxygen vacancy defects generated by boron ions reduce Ti+4 and affect electron transport in dye-sensitized solar cells. Excess electrons originating from the oxygen vacancies of doped TiO2 downward shift in the conduction band edge and prompt the transfer of photoelectrons from the conduction band of the rutile phase to the lower energy anatase trapping sites; they then separate charges to enhance the photocurrent and Jsc. Although the resistance of the electron recombination (Rk between doped TiO2 photoanode and the electrolyte for the doped TiO2 sample is lower, a longer electron lifetime (τ of 19.7 ms with a higher electron density (ns of 2.1 × 1018 cm−3 contributes to high solar conversion efficiency.

  13. Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ihaddadene-Le Coq, L.; Marcon, J.; Dush-Nicolini, A.; Masmoudi, K.; Ketata, K

    2003-12-31

    We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the silicon boride layer as a source of self-interstitials. Experimental results have been simulated and consistent parameters have been found to fit the data. BED effect has been studied. Model parameters extractions have been discussed.

  14. Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

    International Nuclear Information System (INIS)

    We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the silicon boride layer as a source of self-interstitials. Experimental results have been simulated and consistent parameters have been found to fit the data. BED effect has been studied. Model parameters extractions have been discussed

  15. Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Dan; Sun Fu-He; Wei Chang-Chun; Sun Jian; Zhang De-Kun; Geng Xin-Hua; Xiong Shao-Zhen; Zhao Ying

    2009-01-01

    This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

  16. Study on the Tribological Properties and Composition of W6Mo5Cr4V2 High Speed Steel Implanted by Boron

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; XIONG Wan-quan; ZHANG Ping; TAN Jun; ZAHO Jun-jun

    2004-01-01

    Boron atoms were implanted into W6Mo5Cr4V2 high-speed steel (HSS) in CC-60 ion implantation machine to improve its tribological properties. The influence of boron implantation dose on the microhardness, friction coefficient and wear resistance of HSS were investigated. The experiment results showed that the implantation of boron can improve the tribological properties of W6Mo5Cr4V2 steel greatly. Then the phase and composition of implanted layer were analyzed by XRD and XPS. The analysisresult revealed that the interface between the implantation layer and substrate appeared to be mixed.With the increase of boron dose, the compound of δ-WB, CrB, BFe3 are the main additive phases, which supposed to be the main reason to improve the tribological properties of W6Mo5Cr4V2 steel.

  17. Boron remobilization at low boron supply in olive (Olea europaea) in relation to leaf and phloem mannitol concentrations.

    Science.gov (United States)

    Liakopoulos, Georgios; Stavrianakou, Sotiria; Filippou, Manolis; Fasseas, Costas; Tsadilas, Christos; Drossopoulos, Ioannis; Karabourniotis, George

    2005-02-01

    For plant species in which a considerable portion of the photoassimilates are translocated in the phloem as sugar alcohols, boron is freely translocated from mature organs to growing tissues. However, the effects of decreased plant boron status on boron remobilization are poorly understood. We conducted a growth chamber experiment (CE) and a field experiment (FE) to study the effects of low boron supply on boron remobilization in olive (Olea europaea L.), a species that transports considerable amounts of mannitol in the phloem. For the CE, several physiological parameters were compared between control (B+) and boron-deficient olive plants (B-) during the expansion of new leaves. Boron remobilization was assessed by measuring boron content of selected leaves at the beginning and at the end of the CE. As expected, boron was remobilized from mature leaves to young leaves of B+ plants; however, considerable boron remobilization was also observed in B- plants, suggesting a mechanism whereby olive can sustain a minimum boron supply for growth of new tissues despite an insufficient external boron supply. Boron deficiency caused inhibition of new growth but had no effect on photosynthetic capacity per unit leaf surface area of young and mature leaves, thereby altering the carbon utilization pattern and resulting in carbon allocation to structures within the source leaves and accumulation of soluble carbohydrates. Specifically, in mature B- leaves in the CE and in B- leaves in the FE, mannitol concentration on a leaf water content basis increased by 48 and 27% respectively, compared with controls. Carbon export ability (assessed by both phloem anatomy and phloem exudate composition of FE leaves) was enhanced at low boron supply. We conclude that, at low boron supply, increased mannitol concentrations maintain boron remobilization from source leaves to boron-demanding sink leaves. PMID:15574397

  18. Removal of boron from ceramic industry wastewater by adsorption-flocculation mechanism using palm oil mill boiler (POMB) bottom ash and polymer.

    Science.gov (United States)

    Chong, Mei Fong; Lee, Kah Peng; Chieng, Hui Jiun; Syazwani Binti Ramli, Ili Izyan

    2009-07-01

    Boron is extensively used in the ceramic industry for enhancing mechanical strength of the tiles. The discharge of boron containing wastewater to the environment causes severe pollution problems. Boron is also dangerous for human consumption and causes organisms' reproductive impediments if the safe intake level is exceeded. Current methods to remove boron include ion-exchange, membrane filtration, precipitation-coagulation, biological and chemical treatment. These methods are costly to remove boron from the wastewater and hence infeasible for industrial wastewater treatment. In the present research, adsorption-flocculation mechanism is proposed for boron removal from ceramic wastewater by using Palm Oil Mill Boiler (POMB) bottom ash and long chain polymer or flocculant. Ceramic wastewater is turbid and milky in color which contains 15 mg/L of boron and 2000 mg/L of suspended solids. The optimum operating conditions for boron adsorption on POMB bottom ash and flocculation using polymer were investigated in the present research. Adsorption isotherm of boron on bottom ash was also investigated to evaluate the adsorption capacity. Adsorption isotherm modeling was conducted based on Langmuir and Freundlich isotherms. The results show that coarse POMB bottom ash with particle size larger than 2 mm is a suitable adsorbent where boron is removed up to 80% under the optimum conditions (pH=8.0, dosage=40 g bottom ash/300 ml wastewater, residence time=1h). The results also show that KP 1200 B cationic polymer is effective in flocculating the suspended solids while AP 120 C anionic polymer is effective in flocculating the bottom ash. The combined cationic and anionic polymers are able to clarify the ceramic wastewater under the optimum conditions (dosage of KP 1200 B cationic polymer=100 mg/L, dosage of AP 120 C anionic polymer=50 mg/L, mixing speed=200 rpm). Under the optimum operating conditions, the boron and suspended solids concentration of the treated wastewater were

  19. Removal of boron from ceramic industry wastewater by adsorption-flocculation mechanism using palm oil mill boiler (POMB) bottom ash and polymer.

    Science.gov (United States)

    Chong, Mei Fong; Lee, Kah Peng; Chieng, Hui Jiun; Syazwani Binti Ramli, Ili Izyan

    2009-07-01

    Boron is extensively used in the ceramic industry for enhancing mechanical strength of the tiles. The discharge of boron containing wastewater to the environment causes severe pollution problems. Boron is also dangerous for human consumption and causes organisms' reproductive impediments if the safe intake level is exceeded. Current methods to remove boron include ion-exchange, membrane filtration, precipitation-coagulation, biological and chemical treatment. These methods are costly to remove boron from the wastewater and hence infeasible for industrial wastewater treatment. In the present research, adsorption-flocculation mechanism is proposed for boron removal from ceramic wastewater by using Palm Oil Mill Boiler (POMB) bottom ash and long chain polymer or flocculant. Ceramic wastewater is turbid and milky in color which contains 15 mg/L of boron and 2000 mg/L of suspended solids. The optimum operating conditions for boron adsorption on POMB bottom ash and flocculation using polymer were investigated in the present research. Adsorption isotherm of boron on bottom ash was also investigated to evaluate the adsorption capacity. Adsorption isotherm modeling was conducted based on Langmuir and Freundlich isotherms. The results show that coarse POMB bottom ash with particle size larger than 2 mm is a suitable adsorbent where boron is removed up to 80% under the optimum conditions (pH=8.0, dosage=40 g bottom ash/300 ml wastewater, residence time=1h). The results also show that KP 1200 B cationic polymer is effective in flocculating the suspended solids while AP 120 C anionic polymer is effective in flocculating the bottom ash. The combined cationic and anionic polymers are able to clarify the ceramic wastewater under the optimum conditions (dosage of KP 1200 B cationic polymer=100 mg/L, dosage of AP 120 C anionic polymer=50 mg/L, mixing speed=200 rpm). Under the optimum operating conditions, the boron and suspended solids concentration of the treated wastewater were

  20. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  1. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P2O5) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  2. Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bazizi, E.M. [LAAS/CNRS, University of Toulouse, 7 av. Col. Roche, 31077 Toulouse (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse (France)], E-mail: bazizi@laas.fr; Fazzini, P.F. [LAAS/CNRS, University of Toulouse, 7 av. Col. Roche, 31077 Toulouse (France); Zechner, C.; Tsibizov, A. [Synopsys Switzerland LLC, Affolternstrasse 52, 8050 Zuerich (Switzerland); Kheyrandish, H. [CSMA, Queens Road, Penkhull, Stoke-on-Trent, Staffordshire ST4 7LQ (United Kingdom); Pakfar, A.; Ciampolini, L.; Tavernier, C. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Cristiano, F. [LAAS/CNRS, University of Toulouse, 7 av. Col. Roche, 31077 Toulouse (France)

    2008-12-05

    In this work, the evolution of boron trapping at End-of-Range (EOR) defects was investigated by secondary ion mass spectrometry (SIMS) and transmission electron microscope (TEM). Si wafers with a constant boron concentration of 2 x 10{sup 18} cm{sup -3} were implanted with 30 keV germanium and with a dose of 10{sup 15} cm{sup -2} and then annealed at 700, 800, or 900 deg. C in an N{sub 2} ambient for various times. The experimental results suggest that the evolution of boron-trapping peak is driven by the evolution of {l_brace}3 1 1{r_brace} defects and that the dislocation loops contribution to the trapping mechanism is less pronounced. An analytic model for the concurrent boron trapping at {l_brace}3 1 1{r_brace} defects and dislocation loops was developed by taking into account the geometry of the EOR defects. The trapped species is represented by neutral BI pairs which can be captured either by {l_brace}3 1 1{r_brace} defects or by dislocation loops. The model accurately reproduces the complex evolution of the trapping peak as a function of both the annealing time and temperature. These results confirm that the evolution of the boron-trapping peak is closely related to the evolution of the {l_brace}3 1 1{r_brace} defects, therefore suggesting that boron trapping is associated to the capture and release of boron atoms at the {l_brace}3 1 1{r_brace} defects formed in the EOR region.

  3. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 4th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 24 in 1992. First, clinical experiences of BNCT in the Kyoto University Research Reactor in 1992 were briefly reported. Then, the killing effects of boron cluster-containing nucleic acid precursors on tumor cells were shown (Chap. 2). The various trials of the optical resolution of B-p-boronophenylalanine for neutron capture therapy were made (Chap. 3). The borate-dextran gel complexes were investigated by the nuclear magnetic resonance spectroscopy. The stability constants of borate complexes were listed, and are useful in the solution chemistry of boron compounds (Chap. 4). The interactions between boron compounds and biological materials were studied by the paper electrophoresis which had been developed by us (Chap. 5). Molecular design of boron-10 carriers and their organic synthesis were reported (Chap. 6). Carborane-containing aziridine boron carriers which were directed to the DNA alkylation were synthesized and their cancer cell killing efficacies were tested (Chap. 7). The solution chemistry of deuterium oxide which is a good neutron moderator was reported, relating to the BNCT (Chap. 8). (author)

  4. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2010-01-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  5. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    Directory of Open Access Journals (Sweden)

    Yuya Egawa

    2014-02-01

    Full Text Available In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conjugated azobenzenes have been synthesized. There are several types of boronic acid azobenzenes, and their characteristics tend to rely on the substitute position of the boronic acid moiety. For example, o-substitution of boronic acid to the azo group gives the advantage of a significant color change upon sugar addition. Nitrogen-15 Nuclear Magnetic Resonance (NMR studies clearly show a signaling mechanism based on the formation and cleavage of the B–N dative bond between boronic acid and azo moieties in the dye. Some boronic acid-substituted azobenzenes were attached to a polymer or utilized for supramolecular chemistry to produce glucose-selective binding, in which two boronic acid moieties cooperatively bind one glucose molecule. In addition, boronic acid-substituted azobenzenes have been applied not only for glucose monitoring, but also for the sensing of glycated hemoglobin and dopamine.

  6. The effect of grain boundary segregation of boron in cast alloy 718 on HAZ microfissuring -- a SIMS analysis

    Energy Technology Data Exchange (ETDEWEB)

    Huang, X.; Chaturvedi, M.C. [Univ. of Manitoba, Winnipeg, Manitoba (Canada). Dept. of Mechanical and Industrial Engineering; Richards, N.L. [Bristol Aerospace Ltd., Winnipeg, Manitoba (Canada); Jackman, J. [CANMET, Ottawa, Ontario (Canada)

    1997-08-01

    Secondary ion mass spectroscopy (SIMS) has been used to examine grain boundary segregation in cast alloy 718. The relationship between the boron segregation and the microfissuring tendency in heat affected zones (HAZ) around electron beam welds is discussed in this study. It is concluded that two types of segregation, namely equilibrium and non-equilibrium segregation, occurred during the homogenization heat treatment of the base material. Water quenching after the homogenization treatment inhibited non-equilibrium segregation of boron and other trace elements owing to insufficient time for diffusion of solute-vacancy complexes to occur. Intermediate cooling rates such as air cooling enhanced both non-equilibrium and equilibrium segregation, since equilibrium segregation occurred during holding at the heat treatment temperature. The value of net segregation produced by a combination of equilibrium segregation and non-equilibrium segregation varied with temperature in a U-shape. The nature of the grain boundary in the cast alloy was examined by using an electron backscattered diffraction (EBSD) technique and it was found that 93% of the grain boundaries were of the random type ({Sigma} > 49). The weldability of this alloy was found to be closely related to the grain boundary segregation of boron, i.e., the variation of HAZ total crack length (TCL) with pre-welding heat treatment temperatures has a trend similar to that of boron segregation with temperature after air cooling. Mechanisms for the effect of boron on HAZ microfissuring have been proposed.

  7. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  8. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    International Nuclear Information System (INIS)

    In this study, 4 x 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  9. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Science.gov (United States)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-01

    In this study, 4 × 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  10. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  11. Enhanced Plasma Performance by ICRF Boronization

    Institute of Scientific and Technical Information of China (English)

    万宝年; 赵燕平; 李建刚; 宋梅; 吴振伟; 罗家融; 李成富; 王小明

    2002-01-01

    Boronization with carborane (C2B10H12) by ICRF has been applied routinely to the walls of HT-7 super-conducting tokamak for the reduction of impurity influx, especially carbon and oxygen. Significant suppression of metallic impurities and radiating power fraction are achieved. The improved confinement for both particle and energy is observed in full range of operation parameters. Energy balance analysis shows that electron heat diffusion coefficient is strongly reduced. Measurements by Langmuir probes at the edge plasma show that the poloidal velocity shear after boronization is changed to a profile favoring to good confinement. The main emphasis of this paper is to describe effects of boronization on aspects of the enhanced plasma performance.

  12. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water.

  13. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    NARCIS (Netherlands)

    Mohammadi, V.; Nihtianov, S.

    2016-01-01

    The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and co

  14. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  15. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-01-01

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

  16. Computational Aspects of Carbon and Boron Nanotubes

    Directory of Open Access Journals (Sweden)

    Paul Manuel

    2010-11-01

    Full Text Available Carbon hexagonal nanotubes, boron triangular nanotubes and boron a-nanotubes are a few popular nano structures. Computational researchers look at these structures as graphs where each atom is a node and an atomic bond is an edge. While researchers are discussing the differences among the three nanotubes, we identify the topological and structural similarities among them. We show that the three nanotubes have the same maximum independent set and their matching ratios are independent of the number of columns. In addition, we illustrate that they also have similar underlying broadcasting spanning tree and identical communication behavior.

  17. Mass spectroscopic analysis of a plume induced by laser ablation of pyrolytic boron nitride

    CERN Document Server

    Chae, H B; Lee, I H; Park, S M

    1998-01-01

    The laser ablation of a pyrolytic boron nitride (pBN) target was investigated by time-of- flight quadrupole mass spectroscopy. According to the laser-correlated ion mass spectra, B sup + and B sub 2 sup + ions were produced, but neither N sup + , N sub 2 sup + , or BN sup + ions were observed at laser fluences below 1 J/cm sup 2. Instead, neutral N sub 2 molecules were found to be formed. The mean velocities and kinetic energies of the B sup + ions were obtained by time-of-flight analysis. Also, reactive laser ablation under a N sub 2 atmosphere was attempted by using a pulsed valve synchronized with the laser pulse.

  18. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  19. Direct evidence of metallic bands in a monolayer boron sheet

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Liu, Ro-Ya; Iimori, Takushi; Lian, Chao; Li, Hui; Chen, Lan; Wu, Kehui; Meng, Sheng; Komori, Fumio; Matsuda, Iwao

    2016-07-01

    The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the β12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S ¯ point and a pair of hole pockets near the X ¯ point, which is supported by the first-principles calculations. The metallic boron allotrope in β12 sheet opens the way to novel physics and chemistry in material science.

  20. Boron carbide (B{sub 4}C) coating. Deposition and testing

    Energy Technology Data Exchange (ETDEWEB)

    Azizov, E.; Barsuk, V. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Begrambekov, L., E-mail: lbb@plasma.mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Buzhinsky, O. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Evsin, A.; Gordeev, A.; Grunin, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Klimov, N. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Kurnaev, V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Mazul, I. [Federal State Unitary Interprise Efremov Scientific Research Institute of Electrophysical Apparatus (NIIEFA Efremov), St-Peterburg (Russian Federation); Otroshchenko, V.; Putric, A. [Troitsk Institute for Innovation and Fusion Research (TRINITI), Moscow Region (Russian Federation); Sadovskiy, Ya.; Shigin, P.; Vergazov, S.; Zakharov, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-08-15

    Boron carbide was proposed as a material of in-situ protecting coating for tungsten tiles of ITER divertor. To prove this concept the project including investigation of regimes of plasma deposition of B{sub 4}C coating on tungsten and tests of boron carbide layer in ITER-like is started recently. The paper contends the first results of the project. The results of B{sub 4}C coating irradiation by the plasma pulses of QSPU-T plasma accelerator are presented. The new device capable of B{sub 4}C film deposition on tungsten and testing of the films and materials with ITER-like heat loads and ion- and electron irradiation is described. The results of B{sub 4}C coating deposition and testing of both tungsten substrate and coating are shown and discussed.

  1. Ion sources for energy extremes of ion implantation.

    Science.gov (United States)

    Hershcovitch, A; Johnson, B M; Batalin, V A; Kropachev, G N; Kuibeda, R P; Kulevoy, T V; Kolomiets, A A; Pershin, V I; Petrenko, S V; Rudskoy, I; Seleznev, D N; Bugaev, A S; Gushenets, V I; Litovko, I V; Oks, E M; Yushkov, G Yu; Masunov, E S; Polozov, S M; Poole, H J; Storozhenko, P A; Svarovski, A Ya

    2008-02-01

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  2. Relationship Between Soil Boron Adsorption Kinetics and Rape Plant Boron Response

    Institute of Scientific and Technical Information of China (English)

    ZHUDUANWEI; PIMEIMEI; 等

    1997-01-01

    The boron adsorption kinetic experiment in soil by means a flow displacement technique showed that the kinetic data could be described with some mathematic equations.The average values of the coorealtion coefficeint for zero-order,first-order,parabolic diffusion ,Elovich,power function and eponential equations were 0.957,0.982,0.981,0.984,0.981 and 0.902 ,respectively,The correlation between adsorbed boron or its other expression form and time were the highest for first-order ,parabloic diffusion Elovich,and pwer function equations,the second for the zeroorder equation,and the tlowest for the exponential equation.The parabloic diffusion equation fitted well the expermiental results,with the least standard error among the six kinetic equation,showing that the monvemetn of boron from soil solution to soil colloid surface may be controlled by boron diffusion speed.The boron content of rape seedling obtained from soil cultvation was correlated with the rate constants of the kinetic equations.The constants of first-order ,parabloic diffusion,and exponential equaitions were significanlty correlated with the boron content of the crop of NPK treatment at a 95% probaility level ,with correation coeffecients being 0.686,0.691 and 0.64 and 0.641,respectively.In the case of zero-order equation,it Was significant at 99% probability level(r=0.736),These results showed that the adsorption kinetic constants of soil boron were closely related with the rape plant response to boron.

  3. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na210B12H11SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author)

  4. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  5. Effects of boron number per unit volume on the shielding properties of composites made with boron ores form China

    International Nuclear Information System (INIS)

    The total macroscopic removal cross sections, deposited energies and the absorbed doses of three new shielding composites loaded with specific boron-rich slag, boron concentrate ore and boron mud of China for 252Cf neutron source were investigated by experimental and Monte Carlo calculation. The results were evaluated by boron mole numbers per unit volume in composites. The half value layers of the composites were calculated and compared with that of Portland concrete, indicating that ascending boron mole numbers per unit volume in the composites can enhance the shielding properties of the composites for 252Cf neutron source. (authors)

  6. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    Energy Technology Data Exchange (ETDEWEB)

    Ozdemir, Ozkan Emre, E-mail: ozdemir@psu.edu; Avramova, Maria N., E-mail: mna109@psu.edu

    2014-10-15

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis.

  7. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    International Nuclear Information System (INIS)

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis

  8. Synthesis and evaluation of boron folates for Boron-Neutron-Capture-Therapy (BNCT)

    Energy Technology Data Exchange (ETDEWEB)

    Kettenbach, Kathrin; Schieferstein, Hanno; Grunewald, Catrin; Hampel, Gabriele; Schuetz, Christian L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Iffland, Dorothee; Bings, Nicolas H. [Mainz Univ. (Germany). Inst. of Inorganic Chemistry and Analytical Chemistry; Reffert, Laura M. [Hannover Medical School (Germany). Radiopharmaceutical Chemistry; Ross, Tobias L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Hannover Medical School (Germany). Radiopharmaceutical Chemistry

    2015-07-01

    Boron neutron capture therapy (BNCT) employs {sup 10}B-pharmaceuticals administered for the treatment of malignancies, and subsequently irradiated with thermal neutrons. So far, clinical established pharmaceuticals like boron phenylalanine (BPA) or sodium boron mercaptate (BSH) use imperfect (BPA) or passive (BSH) targeting for accumulation at target sites. Due to the need of a selective transportation of boron drugs into cancer cells and sparing healthy tissues, we combined the BNCT approach with the specific and effective folate receptor (FR) targeting concept. The FR is overexpressed on many human carcinomas and provides a selective and specific target for molecular imaging as well as for tumor therapy. We synthesized and characterized a carborane-folate as well as a BSH-folate to study their in vitro characteristics and their potential as new boron-carriers for BNCT. Uptake studies were carried out using human KB cells showing a significant increase of the boron content in cells and demonstrating the successful combination of active FR-targeting and BNCT.

  9. Coadsorption of lanthanum with boron and gadolinium with boron on Mo(1 1 0)

    Science.gov (United States)

    Magkoev, Tamerlan T.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-05-01

    Submonolayer to multilayer coadsorption of lanthanum (La) with boron (B) and gadolinium (Gd) with boron on the surface of Mo(1 1 0) has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and work function ( ϕ) measurements. The equilibrium state of double adsorbate systems achieved either by adsorption of rare-earth metal (REM) on boron precovered Mo(1 1 0) surface held at room temperature or after moderate annealing of the system with opposite order of adsorption (B on REM films) is the layer which is the inhomogeneous mixture of boron and REM atoms with preferential concentration of boron in the surface area of the mixed film. The work function of such films even at REM to boron concentration ratio much higher than 1/6 are very close to the values of corresponding bulk LaB 6 and GdB 6, favoring assumption of surface rearrangement as the dominant reason of high electron emission efficiency of hexaborides. Almost total similarity of the results for La-B and Gd-B systems can be viewed as the consequence of weak participation of Gd f-electrons in determining the thermionic properties of corresponding double layers.

  10. The investigation of physical conditions of boron uptake region in proton boron fusion therapy (PBFT

    Directory of Open Access Journals (Sweden)

    Joo-Young Jung

    2016-09-01

    Full Text Available We conducted a quantitative study to identify the effectiveness of proton boron fusion therapy (PBFT. Four simulation scenarios were designed to investigate the escalation in total dose with the proton boron reaction using a Monte Carlo n-particle extended (MCNPX 2.6.0 simulation. The peak integrated dose was obtained for three different physical conditions (i.e., boron uptake region (BUR thickness, BUR location, and boron concentration with differing proton beam energy (60–90 MeV. We found that the peak integrated dose was increased by up to 96.62% compared to the pristine proton Bragg-peak. For the synergetic effect to take place with 60–70 MeV proton beam, the BUR had to be at least 0.3 cm thick while spanning the Bragg-peak. Similarly to the thickness, the BUR location needed to be within 0.3 cm from the Bragg-peak when the thickness was maintained at 0.9 cm. An effective proton boron reaction required the boron concentration to be equal to or greater than 14.4 mg/g. These results demonstrate the impact of various physical and beam conditions of the PBFT, which are critical environmental factors for the treatment planning. We envision that this study will advance our understanding of the PBFT, which can be an invaluable treatment method for maximizing the potential of proton therapy.

  11. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  12. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  13. NEW ADVANCES IN BORON SOIL CHEMISTRY - Paper

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  14. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  15. Pechmann Reaction Promoted by Boron Trifluoride Dihydrate

    Directory of Open Access Journals (Sweden)

    J. Mezger

    2005-08-01

    Full Text Available The Pechmann reaction of substituted phenols 1a-e with methyl acetoacetate (2 can be activated by boron trifluoride dihydrate (3 to give the corresponding 4-methyl- coumarin derivatives 4a-e in excellent yield (98-99 %.

  16. Investigating the Boron Requirement of Plants.

    Science.gov (United States)

    Bohnsack, Charles W.

    1991-01-01

    This article describes a simple and rapid method for using summer squash to investigate born deficiency in plants. Author asserts that students are likely to feel challenged by laboratory exercises and projects that focus on the role boron plays in plant growth because it is an unresolved problem in biology. (PR)

  17. BCM6: New Generation of Boron Meter

    International Nuclear Information System (INIS)

    Full text of publication follows: Rolls-Royce has developed a new generation of boron meter, based on more than 30 years of experience. The Rolls-Royce BCM6 boron meter provides Nuclear Power Plant (NPP) operators with the boron concentration of the primary circuit. The meter provides continuous and safe measurements with no manual sampling and no human contact. In this paper, technical features, advantages and customer benefits of the use of the new generation of Rolls-Royce BCM6 boron meter will be detailed. Values and associated alarms are provides over different media: 4-20 mA outputs, relays, displays in the main control room and in the chemical lab, and digital links. A special alarm avoids unexpected homogeneous dilution of the primary circuit, which is a critical operational parameter. The Rolls-Royce BCM6 boron meter is fully configurable over a set of parameters allowing adaptation to customer needs. It has a differential capability, thus eliminating neutronic noise and keeping measurements accurate, even in the case of fuel clad rupture. Measurements are accurate, reliable, and have a quick response time. Equipment meets state-of-the-art qualification requests. Designed in 2008, the BCM6 boron meter is the newest equipment of Rolls-Royce boron meters product line. It has been chosen to equip the French EPR NPP and complies with the state-of-the-art of the technology. Rolls-Royce has more than 30 years of experience in Instrumentation and Controls with more than 75 NPP units operating worldwide. All of this experience return has been put in this new generation of equipment to provide the customer with the best operation. About Rolls-Royce Rolls-Royce is a global business providing integrated power systems for use on land, at sea and in the air. The Group has a balanced business portfolio with leading market positions. Rolls-Royce has a broad range of civil nuclear expertise, including work related to licensing and safety reviews, engineering design

  18. Design of a boron neutron capture enhanced fast neutron therapy assembly

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonglu

    2006-08-01

    The use of boron neutron capture to boost tumor dose in fast neutron therapy has been investigated at several fast neutron therapy centers worldwide. This treatment is termed boron neutron capture enhanced fast neutron therapy (BNCEFNT). It is a combination of boron neutron capture therapy (BNCT) and fast neutron therapy (FNT). It is believed that BNCEFNT may be useful in the treatment of some radioresistant brain tumors, such as glioblastoma multiform (GBM). A boron neutron capture enhanced fast neutron therapy assembly has been designed for the Fermilab Neutron Therapy Facility (NTF). This assembly uses a tungsten filter and collimator near the patient's head, with a graphite reflector surrounding the head to significantly increase the dose due to boron neutron capture reactions. The assembly was designed using Monte Carlo radiation transport code MCNP version 5 for a standard 20x20 cm{sup 2} treatment beam. The calculated boron dose enhancement at 5.7-cm depth in a water-filled head phantom in the assembly with a 5x5 cm{sup 2} collimation was 21.9% per 100-ppm {sup 10}B for a 5.0-cm tungsten filter and 29.8% for a 8.5-cm tungsten filter. The corresponding dose rate for the 5.0-cm and 8.5-cm thick filters were 0.221 and 0.127 Gy/min, respectively; about 48.5% and 27.9% of the dose rate of the standard 10x10 cm{sup 2} fast neutron treatment beam. To validate the design calculations, a simplified BNCEFNT assembly was built using four lead bricks to form a 5x5 cm{sup 2} collimator. Five 1.0-cm thick 20x20 cm{sup 2} tungsten plates were used to obtain different filter thicknesses and graphite bricks/blocks were used to form a reflector. Measurements of the dose enhancement of the simplified assembly in a water-filled head phantom were performed using a pair of tissue-equivalent ion chambers. One of the ion chambers is loaded with 1000-ppm natural boron (184-ppm {sup 10}B) to measure dose due to boron neutron capture. The measured dose enhancement at 5.0-cm depth

  19. Design of a boron neutron capture enhanced fast neutron therapy assembly

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonglu [Georgia Inst. of Technology, Atlanta, GA (United States)

    2006-12-01

    The use of boron neutron capture to boost tumor dose in fast neutron therapy has been investigated at several fast neutron therapy centers worldwide. This treatment is termed boron neutron capture enhanced fast neutron therapy (BNCEFNT). It is a combination of boron neutron capture therapy (BNCT) and fast neutron therapy (FNT). It is believed that BNCEFNT may be useful in the treatment of some radioresistant brain tumors, such as glioblastoma multiform (GBM). A boron neutron capture enhanced fast neutron therapy assembly has been designed for the Fermilab Neutron Therapy Facility (NTF). This assembly uses a tungsten filter and collimator near the patient's head, with a graphite reflector surrounding the head to significantly increase the dose due to boron neutron capture reactions. The assembly was designed using Monte Carlo radiation transport code MCNP version 5 for a standard 20x20 cm2 treatment beam. The calculated boron dose enhancement at 5.7-cm depth in a water-filled head phantom in the assembly with a 5x5 cm2 collimation was 21.9% per 100-ppm 10B for a 5.0-cm tungsten filter and 29.8% for a 8.5-cm tungsten filter. The corresponding dose rate for the 5.0-cm and 8.5-cm thick filters were 0.221 and 0.127 Gy/min, respectively; about 48.5% and 27.9% of the dose rate of the standard 10x10 cm2 fast neutron treatment beam. To validate the design calculations, a simplified BNCEFNT assembly was built using four lead bricks to form a 5x5 cm2 collimator. Five 1.0-cm thick 20x20 cm2 tungsten plates were used to obtain different filter thicknesses and graphite bricks/blocks were used to form a reflector. Measurements of the dose enhancement of the simplified assembly in a water-filled head phantom were performed using a pair of tissue-equivalent ion chambers. One of the ion chambers is loaded with 1000-ppm natural boron (184-ppm 10B) to measure dose due to boron neutron capture. The

  20. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  1. Boron removal from aqueous solution by direct contact membrane distillation

    International Nuclear Information System (INIS)

    The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 μg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution.

  2. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  3. The Boron Isotopic Composition of Elephant Dung: Inputs to the Global Boron Budget

    Science.gov (United States)

    Williams, L. B.; Hervig, R. L.

    2011-12-01

    A survey of boron in kerogen showed isotopically light δ11B values (0 to -50%) that are distinctly different from most mineral and natural water B reservoirs. Diagenesis releases this isotopically light B into pore fluids when hydrocarbons are generated, thus enriching oilfield brines in 10B. This observation suggests that borated biomolecules (BM) are primarily tetrahedral favoring 10B, whereas 11B is preferred in trigonal coordination. Plants, with optimal concentrations up to 100ppm, contribute more B than animal remains to sediment. Elephants are one of the largest herbivores on earth, consuming 200 - 250 kg of plant material/day and producing 50 kg of manure/day. They are inefficient at digestion, thus the manure contains >50% undigested plant material. Dung samples are therefore ideal for studying the δ11B of both the food input and digested output of a significant B supply to sedimentary systems. Horse and rabbit manure were studied for comparison to evaluate B isotope variations in the food supply and potential vital effects on the output. B-content and isotopic composition of dung plant material and digested fractions were measured in the solid state by secondary ion mass spectrometry. The digests were rinsed in 1.8% mannitol, a B-complexing agent, to remove surface adsorbed-B, then air dried and Au-coated for charge compensation. Results showed that the elephant diet contains 3-13 ppm B, with an average δ11B of -20 ± 0.8% (1σ), while rabbit food had 88 ppm B with a δ11B of -50 ± 1.3 %. The digested fraction of the elephant dung contains 4-10ppm B with average δ11B values of -12 ± 1.2%. In comparison, horse manure with 11-21 ppm B has a δ11B of -10.7 ± 0.5% and rabbit manure contains 2-3 ppm B with a δ11B of -8.8 ± 1%. Boron isotope compositions of these manures are indistinguishable (within error). Clearly plant material is a major contributor of isotopically light B to sediments. The herbivores studied fractionate their total B intake in

  4. I. Charge exchange collisions of highly stripped ions with atomic hydrogen. II. Development of a three-stage double tandem accelerator-decelerator system for low energy, highly stripped ions. Final report, March 1, 1977-May 30, 1981

    International Nuclear Information System (INIS)

    The first measurements of charge exchange (electron transfer) in kiloelectron-volt-energy highly stripped boron, carbon, nitrogen and oxygen ion collisions with atoms have been extended to additional collision energies and charge values for the ions. A first accelerator-decelerator source of very highly stripped ions has been developed, and its usefulness in charge exchange studies established

  5. Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

    OpenAIRE

    2014-01-01

    The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S) codoped diamond films grown on high-temperature and high-pressure (HTHP) diamond and Si substrates were investigated using atom force microscopy (AFM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), and current imaging tunneling spectroscopy (CITS) measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on ...

  6. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  7. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.F.; Lin, S.Y. [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China); Peir, J.J. [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China); Liao, J.W. [Graduate Institute of Veterinary Pathobiology, National Chung Hsing University, Taiwan (China); Lin, Y.C. [Department of Veterinary Medicine, National Chung Hsing University, Taiwan (China); Chou, F.I., E-mail: fichou@mx.nthu.edu.tw [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China)] [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China)

    2011-12-15

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 {mu}g {sup 10}B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague-Dawley (SD) rats were studied by administrating 25 mg {sup 10}B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4-6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  8. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    International Nuclear Information System (INIS)

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 μg 10B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague–Dawley (SD) rats were studied by administrating 25 mg 10B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4–6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  9. Boron Rich Solids Sensors, Ultra High Temperature Ceramics, Thermoelectrics, Armor

    CERN Document Server

    Orlovskaya, Nina

    2011-01-01

    The objective of this book is to discuss the current status of research and development of boron-rich solids as sensors, ultra-high temperature ceramics, thermoelectrics, and armor. Novel biological and chemical sensors made of stiff and light-weight boron-rich solids are very exciting and efficient for applications in medical diagnoses, environmental surveillance and the detection of pathogen and biological/chemical terrorism agents. Ultra-high temperature ceramic composites exhibit excellent oxidation and corrosion resistance for hypersonic vehicle applications. Boron-rich solids are also promising candidates for high-temperature thermoelectric conversion. Armor is another very important application of boron-rich solids, since most of them exhibit very high hardness, which makes them perfect candidates with high resistance to ballistic impact. The following topical areas are presented: •boron-rich solids: science and technology; •synthesis and sintering strategies of boron rich solids; •microcantileve...

  10. Online detection of radiation produced in Boron-10 neutron capture reaction: preliminary studies

    International Nuclear Information System (INIS)

    Boron microdistribution in both tumor and normal tissue sections can be studied by the autoradiography technique in solid state nuclear track detectors (SSNTD). A measurement of boron concentration in tissue is obtained through the evaluation of the density of tracks produced by alpha and lithium ions generated in the neutron capture reaction 10B(n,α) 7Li. This knowledge is pivotal when a BNCT (Boron Neutron Capture Therapy) protocol is considered. A new methodology is proposed in order to record alpha and lithium events in real time, as light spots superimposed to the tissue section image. CCD (Charge-Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) are used as detectors, with the advantage of avoiding the superposition of events. Commercial web cams were employed for the preliminary experiments. They were partially disassembled in order to get the sensor chip uncovered. These devices were exposed to different radiation sources: 6.118 MeV alpha particles (252Cf), 0.662 MeV gamma rays (137Cs) and thermal neutrons (moderated 241Am-Be source, 103n.cm2.seg-1), to analyze the characteristics of the respective images. Pictures from tissue sections put in contact with the sensor surface were also acquired. A software was developed in Matlab to perform the image capture and processing. Early results show the feasibility of using these devices to study the distribution 10B in tissue samples. (author)

  11. Mussel-mimetic self-healing polyaspartamide derivative gel via boron-catechol interactions

    Directory of Open Access Journals (Sweden)

    B. Wang

    2015-09-01

    Full Text Available The catechol group from catechol of 3,4-dihydroxyphenethylamine (DOP, dopamine has the ability to interact with metal ions to form non-covalent bonds in polymer chains. In this study, a novel kind of mussel-inspired copolymer, dopamine-conjugated poly(hydroxyethyl aspartamide, polyAspAm(DOP/EA, was synthesized and its interaction with boric acid (H3BO3 to form a cross-linked gel via boron-catechol coordinative binding was investigated. The copolymer was designed to contain a pH responsive adhesive catechol group, which reversibly underwent gelation through the metalcatechol binding, as proved by UV-Vis spectroscopy. When the pH is increased from acidic conditions to a specified pH (pH > 9, the B(OH3 is considered to have a functionality of two to bind catechols, leading to bis-complexes. In addition, the reversibility of the boron-catechol bonds provides self-healing characteristics to the polyAspAm gels. The rheological results showed that boron-catechol coordination could lead to quick and full recovery after the fracture of a gel specimen. This novel pH-responsive and self-healing gel system has potential in various applications including smart hydrogels, medical adhesives, and sealants.

  12. Separation of copper and mercury as heavy metals from aqueous solution using functionalized boron nitride nanosheets: A theoretical study

    Science.gov (United States)

    Azamat, Jafar; Khataee, Alireza; Joo, Sang Woo

    2016-03-01

    Molecular dynamics simulations were performed to investigate the separation of copper and mercury ions as heavy metals from aqueous solution through the functionalized pore of a boron nitride nanosheet (BNNS) membrane. The considered system was comprised of a BNNS with a functionalized pore located in the centre of a simulation box containing an aqueous ionic solution of copper chloride and mercuric chloride. An external voltage was applied along the simulated system in order to produce a separation of heavy metals using pore of BNNS. A functionalized pore of BNNS was obtained by passivating each nitrogen and boron atoms at the pore edge with a fluorine and hydrogen atom, respectively. Our results show that the voltage caused the Cu2+ and Hg2+ cations to pass selectively through the functionalized pore of the BNNS. This selective behaviour of the BNNS is due to the potential of the mean force of each ion. The potential of the mean force of the heavy metals shows that the heavy metals ions met an energy barrier and could not pass through the functionalized pores of the BNNS. By applying a voltage to the system, they overcame the energy barrier and crossed the pores. We calculated the radial distribution function of ion-water and its integrations; the ion retention time; the hydrogen bond; and the autocorrelation function of the hydrogen bond. Using these parameters, the structure of the water molecules and ions were investigated in the system.

  13. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-01

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

  14. Successive Boronizing and Austempering for GGG-40 Grade Ductile Iron

    Institute of Scientific and Technical Information of China (English)

    Murat Baydogan; Seckin Izzet Akray

    2009-01-01

    Boronizing and austempering were successively applied to a GGG-40 grade ductile iron in order to combine the advantages of both process in a single treatment. This new procedure formed a 30 μm thick boride layer on the surface with subsurface matrix structure consisted of acicular ferrite and retained austenite. Reciprocating wear tests showed that successive boronizing and austempering exhibited considerably higher wear resistance than conventional boronizing having a subsurface matrix structure consisting of ferrite and pearlite.

  15. Apparatus for the production of boron nitride nanotubes

    Science.gov (United States)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  16. Characterization of boron doped nanocrystalline diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/{mu}m range.

  17. Behavior of disordered boron carbide under stress.

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W; Chhowalla, Manish

    2006-07-21

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately = P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2-3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  18. The spectrophotometric determination of boron in tourmalines

    Directory of Open Access Journals (Sweden)

    LJILJANA JAKSIC

    2005-02-01

    Full Text Available A procedure for the spectrophotometric determination of macro amounts of boron in tourmaline with azomethine H is described. The used tourmaline concentrate was obtained by magnetic separation and heavy-liquids purification of the schorl zone of pegmatite or granite aplite. The samples of tourmaline were decomposed by fusion with anhydrous sodium carbonate and taken up in dilute hydrochloric acid. The interfering effects of iron and aluminium were eliminated by masking with an EDTA – NTA solution. After pH adjustment, the boron was reacted with azomethine H and the absorbance of the obtained coloured complex was measured at 415 nm. The results are compared with those obtained by other procedures. The relative error of the determination was less than 3 %.

  19. Techniques for increasing boron fiber fracture strain

    Science.gov (United States)

    Dicarlo, J. A.

    1977-01-01

    Improvement in the strain-to-failure of CVD boron fibers is shown possible by contracting the tungsten boride core region and its inherent flaws. The results of three methods are presented in which etching and thermal processing techniques were employed to achieve core flaw contraction by internal stresses available in the boron sheath. After commercially and treatment induced surface flaws were removed from 203 micrometers (8 mil) fibers, the core flaw was observed to be essentially the only source of fiber fracture. Thus, fiber strain-to-failure was found to improve by an amount equal to the treatment induced contraction on the core flaw. Commercial feasibility considerations suggest as the most cost effective technique that method in which as-produced fibers are given a rapid heat treatment above 700 C. Preliminary results concerning the contraction kinetics and fracture behavior observed are presented and discussed both for high vacuum and argon gas heat treatment environments.

  20. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  1. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  2. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  3. Multidimensional boron transport modeling in subchannel approach

    International Nuclear Information System (INIS)

    The main objective of this study is to implement a solute tracking model into the subchannel code CTF for simulations of boric acid transients. Previously, three different boron tracking models have been implemented into CTF and based on the applied analytical and nodal sensitivity studies the Modified Godunov Scheme approach with a physical diffusion term has been selected as the most accurate and best estimate solution. This paper will present the implementation of a multidimensional boron transport modeling with Modified Godunov Scheme within a thermal-hydraulic code based on a subchannel approach. Based on the cross flow mechanism in a multiple-subchannel rod bundle geometry, heat transfer and lateral pressure drop effects will be discussed in deboration and boration case studies. (author)

  4. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  5. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    Energy Technology Data Exchange (ETDEWEB)

    Koleśnik-Gray, Maria M.; Krstić, Vojislav, E-mail: vojislav.krstic@fau.de [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, College Green, Dublin 2 (Ireland); Sorger, Christian; Weber, Heiko B. [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Biswas, Subhajit; Holmes, Justin D. [Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)

    2015-06-08

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

  6. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    International Nuclear Information System (INIS)

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed

  7. A boron-coated ionization chamber for ultra-cold neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Salvat, D.J., E-mail: dsalvat@indiana.edu [Indiana University Center for Exploration of Energy and Matter, Bloomington, IN 47408 (United States); Morris, C.L.; Wang, Z. [Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Adamek, E.R. [Indiana University Center for Exploration of Energy and Matter, Bloomington, IN 47408 (United States); Bacon, J. [Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Hickerson, K.P. [California Institute of Technology, Pasadena, CA 91125 (United States); Hoagland, J.; Holley, A.T. [North Carolina State University, Raleigh, NC 27695 (United States); Liu, C.-Y. [Indiana University Center for Exploration of Energy and Matter, Bloomington, IN 47408 (United States); Makela, M.; Ramsey, J. [Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Reid, A. [North Carolina State University, Raleigh, NC 27695 (United States); Rios, R. [Idaho State University, Pocatello, ID 83209 (United States); Saunders, A.; Sjue, S.K.L. [Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); VornDick, B.; Young, A.R. [North Carolina State University, Raleigh, NC 27695 (United States)

    2012-11-01

    The design and performance of a boron-coated ionization chamber for the detection of ultra-cold neutrons (UCN) are presented. We detect UCN from the solid deuterium-based UCN source at the Los Alamos Neutron Science Center. Our results indicate comparable efficiency to {sup 3}He ionization chambers and proportional counters currently used at the UCN source. In addition, the ion chamber is used to detect thermal neutrons; a comparison of the thermal neutron and UCN pulse-height spectra indicates that UCN mostly capture near the layer surface.

  8. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  9. Nuclear recoil correction to the g factor of boron-like argon

    CERN Document Server

    Shchepetnov, Arseniy A; Volotka, Andrey V; Shabaev, Vladimir M; Tupitsyn, Ilya I; Plunien, Guenter

    2014-01-01

    The nuclear recoil effect to the g factor of boron-like ions is investigated. The one-photon-exchange correction to the nuclear recoil effect is calculated in the non-relativistic approximation for the nuclear recoil operator and in the Breit approximation for the interelectronic-interaction operator. The screening potential is employed to estimate the higher-order contributions. The updated g-factor values are presented for the ground 2P_1/2 and first excited 2P_3/2 states of B-like argon 40^Ar^13+, which are presently being measured by the ARTEMIS group at GSI.

  10. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  11. Functionalized boron-dipyrromethenes and their applications

    OpenAIRE

    M. Ravikanth, M; Vellanki,Lakshmi; Sharma,Ritambhara

    2016-01-01

    Vellanki Lakshmi, Ritambhara Sharma, Mangalampalli Ravikanth Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, IndiaAbstract: Boron-dipyrromethenes/BF2-dipyrrins (BODIPYs) are highly fluorescent dyes with a wide range of applications in various fields because of their attractive photophysical properties. One of the salient features of BODIPYs is that the properties of the BODIPY can be fine-tuned at will by selectively introducing the substituent(s) at the desired locati...

  12. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  13. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU

    2005-01-01

    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  14. Boron Nitride Nanosheets for Metal Protection

    OpenAIRE

    Li, Lu Hua; Xing, Tan; Chen, Ying; Jones, Rob

    2015-01-01

    Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insu...

  15. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  16. Clinical aspects of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy is potentially useful in treating malignant tumors of the central nervous system and is technically possible. Additional in vitro and in vivo testing is required to determine toxicities, normal tissue tolerances and tissue responses to treatment parameters. Adequate tumor uptake of the capture agent can be evaluated clinically prior to implementation of a finalized treatment protocol. Phase I and Phase II protocol development, clinical pharmacokinetic studies and neutron beam development

  17. Dosage of boron traces in graphite, uranium and beryllium oxide

    International Nuclear Information System (INIS)

    The problem of the dosage of the boron in the materials serving to the construction of nuclear reactors arises of the following way: to determine to about 0,1 ppm close to the quantities of boron of the order of tenth ppm. We have chosen the colorimetric analysis with curcumin as method of dosage. To reach the indicated contents, it is necessary to do a previous separation of the boron and the materials of basis, either by extraction of tetraphenylarsonium fluoborate in the case of the boron dosage in uranium and the beryllium oxide, either by the use of a cations exchanger resin of in the case of graphite. (M.B.)

  18. Boron removal from molten silicon using sodium-based slags

    Institute of Scientific and Technical Information of China (English)

    Yin Changhao; Hu Bingfeng; Huang Xinming

    2011-01-01

    Slag refining,as an important option for boron removal to produce solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si),has attracted increasing attention.In this paper,Na2CO3-SiO2 systems were chosen as the sodium-based refining slag materials for boron removal from molten silicon.Furthermore,the effect of Al2O3 addition for boron removal was studied in detail,which showed that an appropriate amount of Al2O3 can help retention of the basicity of the slags,hence improving the boron removal rate.

  19. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S. [Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

    2016-02-15

    The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

  20. Production process for boron carbide coated carbon material and boron carbide coated carbon material obtained by the production process

    International Nuclear Information System (INIS)

    A boron carbide coated carbon material is used for a plasma facing material of a thermonuclear reactor. The surface of a carbon material is chemically reacted with boron oxide to convert it into boron carbide. Then, it is subjected to heat treatment at a temperature of not lower than 1600degC in highly evacuated or inactive atmosphere to attain a boron carbide coated carbon material. The carbon material used is an artificial graphite or a carbon fiber reinforced carbon composite material. In the heat treatment, when the atmosphere is in vacuum, it is highly evacuated to less than 10Pa. Alternatively, in a case of inactive atmosphere, argon or helium gas each having oxygen and nitrogen content of not more than 20ppm is used. With such procedures, there can be obtained a boron carbide-coated carbon material with low content of oxygen and nitrogen impurities contained in the boron carbide coating membrane thereby hardly releasing gases. (I.N.)

  1. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Relationships between seed yields of oilseed rape (Brassica napus L.) and extractable boron concen- trations in three soil layers (A, P and W) were investigated through ten experiments on three types of soils (Alluvic Entisols, Udic Ferrisols and Stagnic Anthrosols) in northern, western and middle Zhejiang Province. Among several mathematical models used to described the relationships, the polynomial equation, y = a + bx + cx2 + dx3, where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil, was the best one. The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40~0.52 mg kg-1. The extractable boron concentration of the P layers of the soils was the most stable. The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  2. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    WEIYOUZHANG

    2001-01-01

    Relationships between seed yields of oilseed rape(Brassica napus L.) and extractable boron concen-trations in three soil layers(A,P and W) were investigated through ten experiments on three types of soils(Alluvic Entisols,Udic Ferrisols and Sagnic Anthrosols) in northern,Western and middle Zhejing Province.Among several mathematical models used to described the relationships,the polynomial equation,y=a+bx+cx2+dx3,where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil,was the best one.The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40-0.52 mg kg-1,The extractable boron concentration of the P layers of the soils was the most stable,The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  3. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  4. Boron impregnation treatment of Eucalyptus grandis wood.

    Science.gov (United States)

    Dhamodaran, T K; Gnanaharan, R

    2007-08-01

    Eucalyptus grandis is suitable for small timber purposes, but its wood is reported to be non-durable and difficult to treat. Boron compounds being diffusible, and the vacuum-pressure impregnation (VPI) method being more suitable for industrial-scale treatment, the possibility of boron impregnation of partially dry to green timber was investigated using a 6% boric acid equivalent (BAE) solution of boric acid and borax in the ratio 1:1.5 under different treatment schedules. It was found that E. grandis wood, even in green condition, could be pressure treated to desired chemical dry salt retention (DSR) and penetration levels using 6% BAE solution. Up to a thickness of 50mm, in order to achieve a DSR of 5 kg/m(3) boron compounds, the desired DSR level as per the Indian Standard for perishable timbers for indoor use, it was found that neither the moisture content of wood nor the treatment schedule posed any problem as far as the treatability of E. grandis wood was concerned. PMID:17046244

  5. Longitudinal residual stresses in boron fibers

    Science.gov (United States)

    Behrendt, D. R.

    1976-01-01

    A technique is proposed for measuring the longitudinal residual stress distribution in commercial CVD (Chemical Vapor Deposition) boron on tungsten fibers of 102, 142, and 203 microns in diameter. The experimental apparatus is so designed that continuous measurements are made of the length changes of a boron fiber specimen as the surface of the fiber is removed by electropolishing. The effects of surface removal on core residual stress and core-initiated fracture are discussed. The three sizes of boron fibers investigated show similar residual stress distributions, i.e., compressive at the surface, tensile near the core, and for the 102-micron fiber compressive again in the core. It is shown that an increase in UTS is due to the increase in the compressive stress at the core produced by fiber contraction during surface removal. An expression is derived for calculating the longitudinal residual stress at a given radius for an as-received fiber of a certain radius from measurements of the axial strain produced by removal of the surface by electropolishing.

  6. Boron dose enhancement for Cf-252 brachytherapy

    International Nuclear Information System (INIS)

    Full text: Monte Carlo modelling of a Cf-252 source in water and in tissue has shown that there is a significant therapeutic advantage obtained if B-10 is present in the tumour cells. This study analyses the advantage in terms of therapeutic margin, defined as the distance from the border of the treatment volume where boron-loaded tumour cells will receive a therapeutic dose. Calculations were made with MCNP version 4a on a Pentium 60 MHz computer. Large voxel sizes allowed 70 minute runs to achieve statistical uncertainties of 5% or less for 100,000 source neutrons. Later runs with smaller voxels confirmed the accuracy of the initial calculations. Calculations were made for treatment volume radii up to 11 cm and 30 ppm boron-10. The therapeutic margin for radii in the range 3-9 cm is approximately 10% of the tumour radius. This results in a 30% increase in the volume inside which peripheral tumour cells may receive a therapeutic dose. The median therapeutic ratio within the therapeutic margin varied from 1.05 at 3 cm up to 1.25 at 10 cm. Thus there is little benefit for less advanced tumours with thickness less than 3 cm. However, cervical cancer frequently presents in an advanced state in Southeast Asia and in Aboriginal communities in Australia, partially attributable to low Pap smear screening rates. These conclusions support the development and testing of boron compounds in in vitro and in vivo models for cervical cancer

  7. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  8. SIMS ion microscopy as a novel, practical tool for subcellular chemical imaging in cancer research

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, S

    2003-01-15

    The development of cryogenic sample preparations, subcellular image quantification schemes, and correlative confocal laser scanning microscopy and ion microscopy have made dynamic SIMS a versatile tool in biology and medicine. For example, ion microscopy can provide much needed, novel information on calcium influx and intracellular calcium stores at organelle resolution in normal and transformed cells in order to better understand the altered calcium signaling in malignant cells. 3-D SIMS imaging of cells revealed dynamic gradients of calcium in cells undergoing mitosis and cytokinesis. Studies of subcellular localization of anticancer drugs is another area of research where ion microscopy can provide novel observations in many types of cancers. Ion microscopy is already an essential tool in boron neutron capture therapy (BNCT) of brain cancer as it can be used to quantitatively image the subcellular location of boron in cells and tissues. This information is critically needed for testing the efficacy of boronated agents and for calculations of radiation dosimetry.

  9. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  10. Cosmis Lithium-Beryllium-Boron Story

    Science.gov (United States)

    Vangioni-Flam, E.; Cassé, M.

    Light element nucleosynthesis is an important chapter of nuclear astrophysics. Specifically, the rare and fragile light nuclei Lithium, Beryllium and Boron (LiBeB) are not generated in the normal course of stellar nucleosynthesis (except Lithium-7) and are, in fact, destroyed in stellar interiors. This characteristic is reflected in the low abundance of these simple species. Up to recently, the most plausible interpretation was that galactic cosmic rays (GCR) interact with interstellar CNO to form LiBeB. Other origins have been also identified, primordial and stellar (Lithium-7) and supernova neutrino spallation (Lithium-7 and Boron-11). In contrast, Beryllium-9, Boron-10 and Lithium-6 are pure spallative products. This last isotope presents a special interest since the Lithium-7/Lithium-6 ratio has been measured in a few halo stars offering a new constraint on the early galactic evolution. However, in the nineties, new observations prompted astrophysicists to reassess the question. Optical measurements of the beryllium and boron abundances in halo stars have been achieved by the 10 meters KECK telescope and the Hubble Space Telescope. These observations indicate a quasi linear correlation between Be and B vs Fe, at least at low metallicity, unexpected on the basis of GCR scenario, predicting a quadratic relationship. As a consequence, the origin and the evolution of the LiBeB nuclei has been revisited. This linearity implies the acceleration of C and O nuclei freshly synthesized and their fragmentation on the the interstellar Hydrogen and Helium. Wolf-Rayet stars and supernovae via the shock waves induced, are the best candidates to the acceleration of their own material enriched into C and O; so LiBeB is produced independently of the Interstellar Medium chemical composition. Moreover, neutrinos emitted by the newly born neutron stars interacting with the C layer of the supernova could produce specifically Lithium-7 and Boron-11. This process is supported by the

  11. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Muratore, Christopher [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton, Dayton, Ohio 45409 (United States); Jespersen, Michael L.; Hu, Jianjun [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45409 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Voevodin, Andrey A., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  12. Implementation of Low Boron Core for APR1400 Initial Cycle

    International Nuclear Information System (INIS)

    Low boron capability of a nuclear power plant is rather a qualitative specification requiring the nuclear power plant to be shut down by control rods alone at any time of a plant cycle according to EUR. The reduction of soluble boron is beneficial since it gives the reduction of the corrosive effects in the plant system and improves plant safety giving more negative MTC. Thus, it is necessary to reduce the amount of soluble boron for the criticality to achieve the low boron capability. However, the reduction of soluble boron has its own set of specific challenges that must be overcome. There are two methods to enable the reduction of soluble boron without modifying plant system significantly. The goal of this study is to investigate the loading pattern to achieve the soluble boron reduction for Shin-Kori Unit 5 APR1400 initial core using the low and high content gadolinia burnable absorbers with standard fuel rod enrichment and to verify the feasibility of low boron core with conventional gadolinia burnable absorbers only. For this study, KARMA has been employed to solve 2-D Transport equation, and ASTRA is used for full core analysis. It was possible to achieve the low boron core for APR1400 Cycle 1 using extended usage of two types of gadolinia burnable absorbers sacrificing fuel cycle economy a little bit while enhancing plant safety significantly. Gd rod patterns within an assembly were optimized through geometrical weighting and loading pattern was developed based on these patterns. The amount of soluble boron reduction achieved is 45.4%. The improvement in plant safety is significant resulting in the reduction of least negative best-estimate MTC by about 4 pcm. Also shutdown margin is increased slightly for low boron core. However, the behavior of axial power shape turns out to be undesirable showing a relatively large fluctuation caused by the more negative MTC. It was found that the low boron core might impose kind of operational difficulty. It is usually

  13. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration.

  14. Influence of Boron on transformation behavior during continuous cooling of low alloyed steels

    Energy Technology Data Exchange (ETDEWEB)

    Terzic, A., E-mail: Adnan.Terzic@imf.tu-freiberg.de [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Calcagnotto, M. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Guk, S. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Schulz, T. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Kawalla, R. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany)

    2013-11-01

    Abstracts: The phase transformation behavior during continuous cooling of low-carbon (LC) Boron-treated steels was studied. Furthermore, the influence of combining Boron with Nb or Ti or V on transformation kinetics was investigated. Additions of Boron to LC steels have a strong influence on the ferrite transformation. By adding 30 ppm Boron to a Boron-free reference alloy the suppressing effect on the ferrite transformation is most pronounced, whereas 10 ppm Boron has almost no effect and 50 ppm Boron the same effect as 30 ppm Boron. Thereby the critical Boron concentration for transformation kinetics in this alloying concept is 30 ppm. The combination of Boron with Ti shifts the phase fields to shorter times and increase the ferrite start temperature, whereas the combination of B+V and B+Nb only affects the ferrite start temperature. Hardness values are mostly influenced by the presence of Boron and strongly depend on the cooling rate.

  15. Development of an 18 GHz superconducting electron cyclotron resonance ion source at RCNP.

    Science.gov (United States)

    Yorita, Tetsuhiko; Hatanaka, Kichiji; Fukuda, Mitsuhiro; Kibayashi, Mitsuru; Morinobu, Shunpei; Okamura, Hiroyuki; Tamii, Atsushi

    2008-02-01

    An 18 GHz superconducting electron cyclotron resonance ion source has recently been developed and installed in order to extend the variety and the intensity of ions at the RCNP coupled cyclotron facility. Production of several ions such as O, N, Ar, Kr, etc., is now under development and some of them have already been used for user experiments. For example, highly charged heavy ion beams like (86)Kr(21+,23+) and intense (16)O(5+,6+) and (15)N(6+) ion beams have been provided for experiments. The metal ion from volatile compounds method for boron ions has been developed as well.

  16. Development of an 18 GHz superconducting electron cyclotron resonance ion source at RCNP.

    Science.gov (United States)

    Yorita, Tetsuhiko; Hatanaka, Kichiji; Fukuda, Mitsuhiro; Kibayashi, Mitsuru; Morinobu, Shunpei; Okamura, Hiroyuki; Tamii, Atsushi

    2008-02-01

    An 18 GHz superconducting electron cyclotron resonance ion source has recently been developed and installed in order to extend the variety and the intensity of ions at the RCNP coupled cyclotron facility. Production of several ions such as O, N, Ar, Kr, etc., is now under development and some of them have already been used for user experiments. For example, highly charged heavy ion beams like (86)Kr(21+,23+) and intense (16)O(5+,6+) and (15)N(6+) ion beams have been provided for experiments. The metal ion from volatile compounds method for boron ions has been developed as well. PMID:18315101

  17. Irradiation studies on carbon nanotube-reinforced boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Aitkaliyeva, Assel [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); McCarthy, Michael C.; Jeong, Hae-Kwon [Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Shao, Lin, E-mail: lshao@ne.tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); Department of Nuclear Engineering, Texas A and M University, College Station, TX 77843 (United States)

    2012-02-01

    Radiation response of carbon nanotube (CNT) reinforced boron carbide composite has been studied for its application as a structural component in nuclear engineering. The composite was bombarded by 140 keV He ions at room temperature to a fluence ranging from 1 Multiplication-Sign 10{sup 14} to 1 Multiplication-Sign 10{sup 17} cm{sup -2}. Two-dimensional Raman mapping shows inhomogeneous distribution of CNTs, and was used to select regions of interest for damage characterization. For CNTs, the intensities ratio of D-G bands (I{sub D}/I{sub G}) increased with fluence up to a certain value, and decreased at the fluence of 5 Multiplication-Sign 10{sup 16} cm{sup -2}. This fluence also corresponds to a trend break in the plot of FWHM (full width at half maximum) of G band vs. I{sub D}/I{sub G} ratio, which indicates amorphization of CNTs. The study shows that Raman spectroscopy is a powerful tool to quantitatively characterize radiation damage in CNT-reinforced composites.

  18. Origin of rectification in boron nitride heterojunctions to silicon.

    Science.gov (United States)

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

  19. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  20. Thermal diffusion boron doping of single-crystal natural diamond

    Science.gov (United States)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  1. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  2. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  3. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  4. Adsorption characteristics of arsenic and boron by soil

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, M.

    1986-01-01

    In order to obtain baseline data concerning the surface and ground water pollution caused by coal ash disposal, adsorption characteristics of arsenic (III) and boron by soil have been studied through laboratory experiments. The main results are as follows: (1) Arsenic (III) and boron adsorption on soil was strongly dependent on pH with adsorption maxima at pH 8 and 8-9, respectively. (2) Arsenic (III) and boron adsorption on soil over the entire concentration ranges investigated could be described by the Langmuir adsorption isotherm and the Freundlich adsorption isotherm, respectively. The Henry adsorption isotherm was also applicable over the lower concentration ranges of arsenic (III) and boron (As (III): < 0.1 deltag/ml; B: < 5deltag/ml.) (3) Arsenic (III) and boron adsorption on soil is controlled mainly by the contents of extractable Fe oxide and hydroxide for arsenic (III) and by the contents of extractable Al hydroxide and allophane (amorphous aluminium silicates) for boron. (4) Adsorption and movement of arsenic (III) and boron during the infiltration of coal ash leachate in soil layer were investigated by means of the unsteady-state, one-dimensional convective-diffusive mass transport model. This model is very useful for evaluation and prediction of the contamination of ground water by trace elements such as arsenic (III) and boron leached at coal ash disposal site.

  5. Design, Fabrication and Performance of Boron-Carbide Control Elements

    International Nuclear Information System (INIS)

    A control blade design, incorporating boron-carbide (B4C) in stainless-steel tubes, was introduced into service in boiling water reactors in April 1961. Since that time this blade has become the standard reference control element in General Electric boiling-water reactors, replacing the 2% boron-stainless-steel blades previously used. The blades consist of a sheathed, cruciform array of small vertical stainless-steel tubes filled with compácted boron-carbide powder. The boron-carbide powder is confined longitudinally into several independent compartments by swaging over ball bearings located inside the tubes. The development and use of boron-carbide control rods is discussed in five phases: 1. Summary of experience with boron-steel blades and reasons for transition to boron-carbide control; 2. Design of the boron-carbide blade, beginning with developmental experiments, including early measurements performed in the AEC ''Control Rod Material and Development Program'' at the Vallecitos Atomic Laboratory, through a description of the final control blade configuration; 3. Fabrication of the blades and quality control procedures; 4. Results of confirmatory pre-operational mechanical and reactivity testing; and 5. Post-operational experience with the blades, including information on the results of mechanical inspection and reactivity testing after two years of reactor service. (author)

  6. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  7. Low-dimensional boron structures based on icosahedron B12

    Science.gov (United States)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  8. Finite Element Analysis Of Boron Diffusion In Wood

    DEFF Research Database (Denmark)

    Krabbenhøft, Kristian; Hoffmeyer, Preben; Bechgaard, Carl;

    2002-01-01

    The coupled heat and mass transfer equations for air, water and heat transfer are supplemented with a conservation equation for an additional species representing the concentration of boron in wood. Boundary conditions for wood-air. wood-soil and wood-boron interfaces arc discussed and finally...

  9. Eleventh international conference on boron chemistry. Programme and abstracts

    International Nuclear Information System (INIS)

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports

  10. Boron Speciation in Soda-Lime Borosilicate Glasses Containing Zirconium

    International Nuclear Information System (INIS)

    Boron speciation was investigated in soda-lime borosilicate glass containing zirconium. In such compositions, competition between charge compensators (here, sodium and calcium) can occur for the compensation of tetrahedral boron or octahedral zirconium units. 11B MAS NMR is particularly suitable for obtaining data on preferential compensation behavior that directly affects the boron coordination number. In addition to the classical proportions of tri- and tetrahedral boron, additional data can be obtained on the contributions involved in these two coordination numbers. An approach is described here based on simultaneous MAS spectrum analysis of borosilicate glass with variable Zr/Si and Ca/Na ratios at two magnetic field strengths (11. 7 and 18. 8 T), with constraints arising from MQMAS spectroscopy, detailed analysis of satellite transitions, and spin-echo experiments. New possibilities of 11B NMR were presented for improving the identification and quantification of the different contributions involved in tri- and tetrahedral boron coordination. Both NMR and Raman revealed a trend of decreased tetrahedral boron proportion with the increase of Ca/Na ratio or the Zr/Si ratio. This strongly suggests that zirconium compensation takes preference over boron compensation, and that zirconium and boron are both compensated mainly by sodium rather than calcium. (authors)

  11. Method for removal of phosgene from boron trichloride

    Science.gov (United States)

    Freund, S.M.

    1983-09-20

    Selective ultraviolet photolysis using an unfiltered mercury arc lamp has been used to substantially reduce the phosgene impurity in a mixture of boron trichloride and phosgene. Infrared spectrophotometric analysis of the sample before and after irradiation shows that it is possible to highly purify commercially available boron trichloride with this method. 5 figs.

  12. Contamination of urban garden soils with copper and boron

    Energy Technology Data Exchange (ETDEWEB)

    Purves, D.

    1966-06-04

    Spectrochemical analyses of garden soils sampled in the Edinburgh and Dundee areas indicate that there is substantial contamination of urban soils with copper and boron. These soils were analyzed spectrochemically with respect to total copper and water-extractable boron content with the view of comparing the levels obtained in urban areas with levels in arable soils in rural areas. The results indicate that urban garden soils contain about four times as much copper and two to three times as much water-soluble boron as rural arable soils. The existence of such a marked disparity between the levels of two potentially toxic elements in urban and rural areas is evidence of slow poisoning of the soil environment in built-up areas and is cause for concern. While the major source of contamination of soils with copper and boron is still a matter for speculation, it is probable that the addition of soot to garden soils and the fall-out of sooty material in built-up areas where atmospheric pollution is a problem make a substantial contribution to the water-extractable boron content of urban soils. Three samples of soot from domestic chimneys, obtained from independent sources, were found on analysis to contain 640, 650 and 555 p.p.m. water-extractable boron, and it is evident that the addition to soil of even small amounts of soot with a boron content of this order would have a marked effect on its water-extractable boron content.

  13. Does boron affect hormone levels of barley cultivars?

    Directory of Open Access Journals (Sweden)

    Muavviz Ayvaz

    2012-11-01

    Full Text Available Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare cultivars (Vamik Hoca and Efes 98 were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm to plants that had grown from seeds for four weeks. Plants were harvested, stem-root length and stem-root dry-fresh weight content were determined. For further analysis, chlorophyll, total protein, endogenic IAA and ABA content analyses were carried out. Results: According to the data obtained, plant growth and development decreased with increasing boron concentrations. With increasing boron concentrations, soluble total protein increased in both cultivars. Boron application led to increased endogenic IAA content in both cultivars. 10 and 20 ppm boron application led to increased endogenic ABA content in Vamik Hoca cultivar whereas endogenic ABA content decreased in Efes 98. Absence of boron application led to increased endogenic IAA and ABA content in both cultivars. Conclusion: As a result, the response to boron is different in the two cultivars and Efes 98 may be more resistant to the toxicity than Vamik Hoca cultivar.

  14. Composition and microhardness of CAE boron nitride films

    International Nuclear Information System (INIS)

    The paper deals with boron nitride produced by cathodic arc evaporation techniques.The films were applied on titanium and cemented carbide substrates. Their characterization was carried out using X-ray diffraction and Knoop microhardness tests. Demonstrated are the high properties of two-phase films, containing β (cubic) and γ (wurtzitic) modifications of boron nitride. (author). 7 refs., 1 fig., 3 tabs

  15. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu

    2014-06-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  16. Synthesis and photoluminescence property of boron carbide nanowires

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B2O3/C powder precursors under an argon flow at 1100~C. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm.

  17. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    JinxiaMa; YuxiuPeng; ZhongzhengLi

    2004-01-01

    In this paper it was studied that these dosage effectsof CPAM, cationic starch,boron modified silica sol(BMS), A12(SO4)3, pH value and electrolyte on theretention and drainage of different microparticulatesystems including CPAM, cationic starch and boronsilica sol. The research results indicated that CPAMhad no good retention when used with boron silicasol. The best retention efficiency was the micropar-ticulate system of CPAM + cationic starch withboron modified silica sol; Secondly was that ofcationic starch with boron modified silica sol; Theworst was that of CPAM with boron modified silicasol. The retention efficiency had no relation with theaddition order between CPAM and cationic starch. Itwas also found that the microparticulate retentionsystem of boron modified silica sol could be used inalum-rosin sizing and in acidity, neutral or alkalinepapermaking conditions. This system also could beused with close circulate water so that it could reducethe water pollution and waste.

  18. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  19. Optical characteristic analysis of the boronization process by using carborane

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wonwook; Park, Kyungdeuk; Choi, Youngsun; Oh, Chahwan [Hanyang University, Seoul (Korea, Republic of)

    2014-09-15

    Boronization with carborane (C{sub 2}B{sub 10}H{sub 12}) was achieved in a vacuum vessel coupled to a filament discharge system. Optical emission spectroscopy was employed to characterize the boronization process. The Balmer lines of hydrogen and deuterium were measured, and the boronization process was analyzed by using the intensity ratio of the H{sub α} to the D{sub α} line (I{sub H}/I{sub D}). The relation between the pressure and the intensity ratio was investigated, and the thickness of the deposited boron film was predicted. Also, the dilution ratio H/(H + D) of the boron film was analyzed and compared with the one predicted from an optical analysis of the emission spectrum.

  20. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

    International Nuclear Information System (INIS)

    We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH3) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B2H6) molecules. Dependency of properties of doped layers on catalyzer temperature (Tcat) and substrate temperature (Ts) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at Ts = 80 °C for Tcat over 800 °C when c-Si is exposed to B2H6 cracked species for a few minutes, and that the heat of substrate over 300 °C is likely to help for B doping contrary to P doping

  1. Deposition and adhesion of PECVD boron coatings on Ti-6Al-4V substrates

    International Nuclear Information System (INIS)

    Plasma-enhanced chemical vapor deposition (PECVD) has been used to produce elemental boron coatings on Ti-6Al-4V substrates. Deposition has been accomplished using a novel PECVD reactor in which a serpentine, rather than a helical, RF coil has been employed. Transmission electron microscopy has confirmed the amorphous nature of these boron coatings. Scratch adhesion properties of this coating/substrate system, including an investigation of the effects of nitrogen ion implantation energy and fluence prior to deposition, have been determined. Both acoustic emission and frictional force measurements have been recorded during scratch removal traverses to detect incipient coating and/or substrate failure. Differences in failure mechanism have been found to result as a consequence of the substrate surface pretreatment, with untreated substrates giving rise to adhesive failures and ion implanted substrates leading to cohesive coating failures. The acoustic emission technique has demonstrated great sensitivity in the detection of both adhesive and cohesive coating failures, and scanning electron microscopy has been effective in differentiating adhesive failures, such as spallation, from coating microcracking in a cohesive failure mode

  2. Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

    International Nuclear Information System (INIS)

    We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 1015/cm2 to 4 x 1015/cm2, followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 deg. C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer.

  3. Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Won-Eui [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Deok Hoi; Kim, Chi Woo [LTPS Team, AMLCD Business, Samsung Mobile Display CO., Cheonan-si, ChoongchungNam-do 331-300 (Korea, Republic of); Ro, Jae-Sang, E-mail: jsang@wow.hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)

    2011-10-31

    We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 10{sup 15}/cm{sup 2} to 4 x 10{sup 15}/cm{sup 2}, followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 deg. C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer.

  4. Numerical simulation of boron injection in a BWR

    Energy Technology Data Exchange (ETDEWEB)

    Tinoco, Hernan, E-mail: htb@forsmark.vattenfall.s [Forsmarks Kraftgrupp AB, SE-742 03 Osthammar (Sweden); Buchwald, Przemyslaw [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Frid, Wiktor, E-mail: wiktor@reactor.sci.kth.s [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

    2010-02-15

    The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of

  5. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  6. Ballistic thermoelectric properties in boron nitride nanoribbons

    Science.gov (United States)

    Xie, Zhong-Xiang; Tang, Li-Ming; Pan, Chang-Ning; Chen, Qiao; Chen, Ke-Qiu

    2013-10-01

    Ballistic thermoelectric properties (TPs) in boron nitride nanoribbons (BNNRs) are studied using the nonequilibrium Green's function atomistic simulation of electron and phonon transport. A comparative analysis for TPs between BNNRs and graphene nanoribbons (GNRs) is made. Results show that the TPs of BNNRs are better than those of GNRs stemming from the higher power factor and smaller thermal conductance of BNNRs. With increasing the ribbon width, the maximum value of ZT (ZTmax) of BNNRs exhibits a transformation from the monotonic decrease to nonlinear increase. We also show that the lattice defect can enhance the ZTmax of these nanoribbons strongly depending on its positions and the edge shape.

  7. Low-dimensional boron nitride nanomaterials

    Directory of Open Access Journals (Sweden)

    Amir Pakdel

    2012-06-01

    Full Text Available In this review, a concise research history of low-dimensional boron nitride (BN nanomaterials followed by recent developments in their synthesis, morphology, properties, and applications are presented. Seventeen years after the initial synthesis of BN nanotubes, research on BN nanomaterials has developed far enough to establish them as one of the most promising inorganic nanosystems. In this regard, it is envisaged that the unique properties of low-dimensional BN systems, such as superb mechanical stiffness, high thermal conductivity, wide optical bandgap, strong ultraviolet emission, thermal stability and chemical inertness will play a key role in prospective developments.

  8. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  9. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  10. Boron nitride nanomaterials for thermal management applications.

    Science.gov (United States)

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed. PMID:25652360

  11. Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

    NARCIS (Netherlands)

    Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

    2012-01-01

    The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

  12. Influence of the composition of the boroning mixture on the dimension change of pressed and boroned samples from iron powder

    Directory of Open Access Journals (Sweden)

    Ivanov S.

    2008-01-01

    Full Text Available Volume changes occur during sintering and chemical-thermal treatments of metal powder samples. The results of the investigation of the volume change of pressed and boroned samples from an iron powder, depending on the mixture composition used for the boroning process, are presented in this paper. The basic mixture, used for boroning of the investigated samples from iron powder, is modified by the addition of activators with different chemical compositions and in different concentrations, of up to 4 wt %. Mixtures with ammonium bifluoride, ammonium chloride and boron potassium fluoride were investigated. The research results and the mathematical modelling enable the choice of mixture compositions for boroning based on the volume change given in advance.

  13. Crystal structure of Zika virus NS2B-NS3 protease in complex with a boronate inhibitor.

    Science.gov (United States)

    Lei, Jian; Hansen, Guido; Nitsche, Christoph; Klein, Christian D; Zhang, Linlin; Hilgenfeld, Rolf

    2016-07-29

    The ongoing Zika virus (ZIKV) outbreak is linked to severe neurological disorders. ZIKV relies on its NS2B/NS3 protease for polyprotein processing; hence, this enzyme is an attractive drug target. The 2.7 angstrom; crystal structure of ZIKV protease in complex with a peptidomimetic boronic acid inhibitor reveals a cyclic diester between the boronic acid and glycerol. The P2 4-aminomethylphenylalanine moiety of the inhibitor forms a salt-bridge with the nonconserved Asp(83) of NS2B; ion-pairing between Asp(83) and the P2 residue of the substrate likely accounts for the enzyme's high catalytic efficiency. The unusual dimer of the ZIKV protease:inhibitor complex seen in the crystal may provide a model for assemblies formed at high local concentrations of protease at the endoplasmatic reticulum membrane, the site of polyprotein processing. PMID:27386922

  14. Factors affecting the ion beam implantation in silicon

    CERN Document Server

    El-Shanshoury, A I

    2003-01-01

    The factors affecting the ion beam implantation in silicon have been studied using boron, phosphorus, oxygen, and argon ions having energy range 0.5 ke V-200 ke V. It was found that the range of the ions in silicon increases with the increase of their energy and decreases with the increase of their masses. The ionization process is found to be the main process for causing damage in the silicon matrix whether it is produced by the accelerated ions or by the recoiled silicon atoms. The magnitude of ionization in silicon is found to be inversely proportional to the mass of ions. Ionization produced by ions or recoils shows different contributions to the damage depending on the mass of ions where the ions energy loss to ionization decreases from 70% to 23% as the mass is increased from 11 for boron (B) to 40 for argon (Ar). Its magnitude, as produced by ions, is found to decrease with the increase of their masses. Its value is observed to increase in a complementary way with the mass increase. Ions energy loss to...

  15. Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O

    Science.gov (United States)

    Slack, G. A.; Morgan, K. E.

    2015-09-01

    Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

  16. Application of Cycloaddition Reactions to the Syntheses of Novel Boron Compounds

    Directory of Open Access Journals (Sweden)

    John A. Maguire

    2010-12-01

    Full Text Available This review covers the application of cycloaddition reactions in forming the boron-containing compounds such as symmetric star-shaped boron-enriched dendritic molecules, nano-structured boron materials and aromatic boronic esters. The resulting boron compounds are potentially important reagents for both materials science and medical applications such as in boron neutron capture therapy (BNCT in cancer treatment and as drug delivery agents and synthetic intermediates for carbon-carbon cross-coupling reactions. In addition, the use of boron cage compounds in a number of cycloaddition reactions to synthesize unique aromatic species will be reviewed briefly.

  17. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  18. Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2015-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

  19. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  20. Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R Roy; Jordan, Kevin; Smith, Michael W

    2015-03-24

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  1. β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

    2013-05-08

    In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

  2. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 1013/cm2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  3. Preparation of catalyst composition comprising a boron containing crystalline material having the structure of zeolites ZSM-5, ZSM-11, ZSM-12, Beta or NU-1

    Energy Technology Data Exchange (ETDEWEB)

    Kuehl, G.H.

    1987-04-28

    A method is described for preparing a catalyst composition for processing high nitrogen-containing oils comprising a boron-containing crystalline material having the structure of zeolite ZSM-5, ZSM-11, ZSM-12, Beta or Nu-1. The sequential steps of synthesizing a boron-containing crystalline material having the structure of zeolite ZSM-5, ZSM-11, ZSM-12, Beta or Nu-1 are: drying the crystalline material at a temperature of from about ambient to less than about 170/sup 0/C; calcining the dried crystalline material in an oxygen- and water-free environment of anhydrous ammonia, anhydrous nitrogen, other anhydrous inert gases or a mixture thereof at a temperature of from about 200/sup 0/ to about 600/sup 0/C to minimize hydrolysis of boron in the boron-containing crystalline material; adsorbing ammonia on the calcined crystalline material; contacting the crystalline material with an ion-exchange solution at a pH of from about 7 to about 11; compositing the ion-exchange solution contacted crystalline material with an inorganic oxide material; drying the composite at a temperature of from about ambient to less than about 170/sup 0/C and calcining the dried composite at a temperature of from about 200/sup 0/ to about 600/sup 0/C.

  4. Microdosimetry for Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    The specific aims of the research proposal were as follows: (1) To design and construct small volume tissue equivalent proportional counters for the dosimetry and microdosimetry of high intensity thermal and epithermal neutron beams used in BNCT, and of modified fast neutron beams designed for boron neutron capture enhanced fast neutron therapy (BNCEFNT). (2) To develop analytical methods for estimating the biological effectiveness of the absorbed dose in BNCT and BNCEFNT based on the measured microdosimetric spectra. (3) To develop an analytical framework for comparing the biological effectiveness of different epithermal neutron beams used in BNCT and BNCEFNT, based on correlated sets of measured microdosimetric spectra and radiobiological data. Specific aims (1) and (2) were achieved in their entirety and are comprehensively documented in Jay Burmeister's Ph.D. dissertation entitled ''Specification of physical and biologically effective absorbed dose in radiation therapies utilizing the boron neutron capture reaction'' (Wayne State University, 1999). Specific aim (3) proved difficult to accomplish because of a lack of sufficient radiobiological data

  5. Durability of tannin-boron-treated timber

    Directory of Open Access Journals (Sweden)

    Gianluca Tondi

    2012-11-01

    Full Text Available Tannin-boron wood preservatives were investigated for their resistance against outdoor agents. This work focused on the analysis of the causes that affect the durability of the tannin-hexamine-treated samples. In particular, dimensional stability, resistance to leaching, and resistance to biological agents were investigated. The combined effect of deterioration agents was evaluated by subjecting the treated samples to simulated and natural weathering tests. The study of the appearance and of the color components (L*, a*, and b* according to CIELAB space of the exposed samples was monitored to assess the efficacy of the tannin-boron formulations for outdoor applications. Significant resistance against the action of water (EN 84, ENV 1250-2 and insects (EN 47 has been demonstrated in specific tests. Conversely, the continuous stress due to artificial and natural weathering deteriorates the color and the visible features of the treated specimens. The combined effect of moisture modifications, solar exposition, and leaching cycles damages the structure of the tannin-based polymeric network and subsequently it negatively affects its preservation properties.

  6. Thermal properties of boron and borides

    International Nuclear Information System (INIS)

    The influence of point defects on the thermal conductivity of polycrystalline β-B has been measured from 1 to 1000 K. Above 300 K, samples containing 2 at. % Hf and Zr have thermal conductivities close to that of amorphous boron, indicating very strong phonon scattering. A thermal conductivity of equal magnitude has also been measured near and below room temperature for nearly stoichiometric single crystals of the theoretical composition YB68. On the basis of a comparison with earlier measurements to temperatures as low as 0.1 K, it is concluded that the thermal conductivity of crystalline YB68 is indeed very similar, if not identical, to that expected for amorphous boron over the entire temperature range of measurement (0.1--300 K). Measurements of the specific heat of nearly stoichiometric YB68 between 1.5 and 30 K also reveal a linear-specific-heat anomaly of the same magnitude as is characteristic for amorphous solids, in fair agreement with earlier measurements by Bilir et al. It is concluded that the lattice vibrations of crystalline YB68 are glasslike

  7. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  8. Ion and electron bombardment-related ion emission during the analysis of diamond using secondary ion mass spectrometry

    International Nuclear Information System (INIS)

    In recent years, the ability to grow single crystal layers of both doped and pure diamonds has improved, and devices for applications in high power electronics and microelectronics are being developed, most of them based on boron doped diamond. In this work, convoluted angular and energy spectra (so-called secondary ion mass spectrometry energy spectra) have been measured for 11B+, 12C+, 16O+, CO+ and CO2+ ions ejected from a single crystal boron doped diamond layer under ultralow energy oxygen and electron beam bombardment. A low energy tail was observed in the 12C+, CO+, and CO2+ signals, corresponding to ions produced in the gas phase. Changing the bombardment conditions, we have identified interaction with the electron beam as the main ionization mechanism. In the case of 12C+ it appears that the gas phase ions are produced by electron stimulated desorption and postionization of surface species created by the oxygen beam. We have detected high signals for CO+ and CO2+ ionized in the gas phase, which supports a mechanism previously suggested to explain the anomalously fast diamond erosion under oxygen ion beam bombardment. We also observe that some species appearing in the mass spectrum are produced by electron stimulated desorption and this needs to be remembered when analyzing these on insulating diamond with charge compensation

  9. Power Burst Facility/Boron Neutron Capture Therapy Program for cancer treatment

    Energy Technology Data Exchange (ETDEWEB)

    Ackermann, A.L. (ed.); Dorn, R.V. III.

    1990-08-01

    This report discusses monthly progress in the Power Boron Facility/Boron Neutron Capture Therapy (PBF/BNCT) Program for Cancer Treatment. Highlights of the PBF/BNCT Program during August 1990 include progress within the areas of: Gross Boron Analysis in Tissue, Blood, and Urine, boron microscopic (subcellular) analytical development, noninvasive boron quantitative determination, analytical radiation transport and interaction modeling for BNCT, large animal model studies, neutron source and facility preparation, administration and common support and PBF operations.

  10. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  11. Physical properties of CVD boron-doped multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Kartick C. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); Strydom, Andre M. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)], E-mail: amstrydom@uj.ac.za; Erasmus, Rudolph M.; Keartland, Jonathan M. [DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); School of Physics, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); Coville, Neil J. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa)], E-mail: Neil.Coville@wits.ac.za

    2008-10-15

    The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.

  12. Characterization of a boron carbide-based polymer neutron sensor

    Science.gov (United States)

    Tan, Chuting; James, Robinson; Dong, Bin; Driver, M. Sky; Kelber, Jeffry A.; Downing, Greg; Cao, Lei R.

    2015-12-01

    Boron is used widely in thin-film solid-state devices for neutron detection. The film thickness and boron concentration are important parameters that relate to a device's detection efficiency and capacitance. Neutron depth profiling was used to determine the film thicknesses and boron-concentration profiles of boron carbide-based polymers grown by plasma enhanced chemical vapor deposition (PECVD) of ortho-carborane (1,2-B10C2H12), resulting in a pure boron carbide film, or of meta-carborane (1,7-B10C2H12) and pyridine (C5H5N), resulting in a pyridine composite film, or of pyrimidine (C4H4N2) resulting in a pure pyrimidine film. The pure boron carbide film had a uniform surface appearance and a constant thickness of 250 nm, whereas the thickness of the composite film was 250-350 nm, measured at three different locations. In the meta-carborane and pyridine composite film the boron concentration was found to increase with depth, which correlated with X-ray photoelectron spectroscopy (XPS)-derived atomic ratios. A proton peak from 14N (n,p)14C reaction was observed in the pure pyrimidine film, indicating an additional neutron sensitivity to nonthermal neutrons from the N atoms in the pyrimidine.

  13. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    Jinxia Ma; Yuxiu Peng; Zhongzheng Li

    2004-01-01

    In this paper it was studied that these dosage effects of CPAM, cationic starch、boron modified silica sol (BMS), Al2(SO4)3, pH value and electrolyte on the retention and drainage of different microparticulate systems including CPAM, cationic starch and boron silica sol. The research results indicated that CPAM had no good retention when used with boron silica sol. The best retention efficiency was the microparticulate system of CPAM + cationic starch with boron modified silica sol; Secondly was that of cationic starch with boron modified silica sol; The worst was that of CPAM with boron modified silica sol. The retention efficiency had no relation with the addition order between CPAM and cationic starch. It was also found that the microparticulate retention system of boron modified silica sol could be used in alum-rosin sizing and in acidity, neutral or alkaline papermaking conditions. This system also could be used with close circulate water so that it could reduce the water pollution and waste.

  14. Boron Particle Ignition in Secondary Chamber of Ducted Rocket

    Directory of Open Access Journals (Sweden)

    J. X. Hu

    2012-01-01

    Full Text Available In the secondary chamber of ducted rocket, there exists a relative speed between boron particles and air stream. Hence, the ignition laws under static conditions cannot be simply applied to represent the actual ignition process of boron particles, and it is required to study the effect of forced convective on the ignition of boron particles. Preheating of boron particles in gas generator makes it possible to utilize the velocity difference between gas and particles in secondary chamber for removal of the liquid oxide layer with the aid of Stoke's forces. An ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism. The shearing action exerted by the high-speed flow causes a boundary layer to be formed in the surface of the liquid oxide layer, and the stripping away of this layer accounts for the accelerated ignition of boron particles. Compared with the King model, as the ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism, the oxide layer thickness thins at all times during the particle ignition and lower the ignition time.

  15. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  16. Nuclear characterizations and applications of boron-containing materials

    International Nuclear Information System (INIS)

    Materials either doped with traces of boron or containing this element as a matrix component have important technological and research applications. For most applications in technology, semiconductor doping, chemical vapor deposition of glass films, and optical waveguide fiber manufacture, boron levels or distribution must be controlled precisely. Thus, methods for quantitation of boron are needed, and its analytical chemistry still receives considerable study. Several nondestructive nuclear methods are described in this paper that have unique capabilities for quantitative analyses of boron at the trace and macro levels. Excellent high-sensitivity determinations are based on alpha track counting. For micro- and macroanalyses, the nuclear track technique using the 10B(n,α)7 Li reaction has been applied to map qualitatively the distribution of boron in borosilicate glass and in optical waveguide glass and fibers. Boron in the 1.59 to 7.75% range is determinable in silicate glasses. Similar information has also been obtained by prompt gamma neutron activation. Neuron depth profiling of boron in glass has been performed also. Results for several of these methods are reported

  17. Boron doping of graphene-pushing the limit.

    Science.gov (United States)

    Chaban, Vitaly V; Prezhdo, Oleg V

    2016-08-25

    Boron-doped derivatives of graphene have been intensely investigated because of their electronic and catalytic properties. The maximum experimentally observed concentration of boron atoms in graphite was 2.35% at 2350 K. By employing quantum chemistry coupled with molecular dynamics, we identified the theoretical doping limit for single-layer graphene at different temperatures, demonstrating that it is possible to achieve much higher boron doping concentrations. According to the calculations, 33.3 mol% of boron does not significantly undermine thermal stability, whereas 50 mol% of boron results in critical backbone deformations, which occur when three or more boron atoms enter the same six-member ring. Even though boron is less electro-negative than carbon, it tends to act as an electron acceptor in the vicinity of C-B bonds. The dipole moment of B-doped graphene depends strongly on the distribution of dopant atoms within the sheet. Compared with N-doped graphene, the dopant-dopant bonds are less destructive in the present system. The reported results motivate efforts to synthesize highly B-doped graphene for semiconductor and catalytic applications. The theoretical predictions can be validated through direct chemical synthesis. PMID:27533648

  18. Contributions te the study of methods and factors affecting the spectrophotometric determination of boron traces with carmin uranium compounds; Contribucion al estudio del metodo y factores que afectan a la determinacion espectrofotometrica de trazas de boro con Carmin en compuestos de uranio

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez Cellini, R.; Gasco Sanchez, L.

    1956-07-01

    The study of some factors affecting the spectrophotometric determination of boron traces with carmin is made; the influence of carmin from different origin, the stability of complex carmin-boric acid in relation with the sulphuric acid concentration, the interference produced by ion nitrate, and the ion uraline and light influence are discussed. (Author) 36 refs.

  19. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  20. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  1. Microstructure and Properties of Plasma Spraying Boron Carbide Coating

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Microstructure of plasma spray boron carbide coating was studied by SEM and TEM. Its physical,mechanical and electrical properties were measured. The results showed that high microhardness,modulus and Iow porosity of B4C coating were manufactured by plasma spray. It was lamellar packing and dense. The B4C coating examined here contained two principal structures and two impurity phase besides major phase. The relatively small value of Young′s modulus, comparing with that of the bulk materials, is explained by porosity. The Fe impurity phase could account for the relatively high electrical conductivity of boron carbide coating by comparing with the general boron carbide materials.

  2. Hugoniot equation of state and dynamic strength of boron carbide

    Science.gov (United States)

    Grady, Dennis E.

    2015-04-01

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20-60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable mechanistic

  3. Hugoniot equation of state and dynamic strength of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, Dennis E. [Applied Research Associates, Southwest Division, 4300 San Mateo Blvd NE, A-220, Albuquerque, New Mexico 87110-129 (United States)

    2015-04-28

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  4. Photometric and emission-spectrometric determination of boron in steels

    International Nuclear Information System (INIS)

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated. (orig.)

  5. Photometric and emission-spectrometric determination of boron in steels

    Energy Technology Data Exchange (ETDEWEB)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated.

  6. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  7. Process for producing wurtzitic or cubic boron nitride

    International Nuclear Information System (INIS)

    Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described

  8. Geometrical frustration in an element solid: (beta)-rhombohedral boron

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, T; Gygi, F; Reed, J; Udagawa, M; Motome, Y; Schwegler, E; Galli, G

    2009-05-19

    Although a comprehensive understanding of the basic properties of most elemental solids has been achieved, there are still fundamental, open questions regarding simple substances, e.g. boron. Based on an Ising model that describes the intrinsic defect states in elemental boron, we show that this system is the only known element to exhibit geometrical frustration in its solid form. Interestingly, we find that the peculiar transport properties of boron that have been reported over the past forty years originate from the presence of geometrical frustration.

  9. Advances in boron-10 isotope separation by chemical exchange distillation

    Energy Technology Data Exchange (ETDEWEB)

    Song Shuang, E-mail: chengruoyu2@sina.co [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China); Mu Yujun; Li Xiaofeng; Bai Peng [School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072 (China)

    2010-01-15

    Advances in boron-10 isotope separation by chemical exchange distillation are reviewed in this article. With a brief introduction of the principle of the separation, the progress on the research of this method and the problems relating to the separation coefficient are discussed. Several new donors, including nitromethane, acetone, methyl isobutyl ketone (MIBK) and diisobutyl ketone (DIBK), which have large separation factors are introduced. The complexes of these new donors and boron trifluoride (BF{sub 3}) are more stable than those of using the donors examined before. Among these new donors nitromethane could be a promising substitute for donors in present use to develop new technology of separating boron-10.

  10. Analyses of beyond design basis accident homogeneous boron dilution scenarios

    Energy Technology Data Exchange (ETDEWEB)

    Kereszturi, Andras; Hegyi, Gyoergy; Maraczy, Csaba; Trosztel, Istvan; Tota, Adam [Hungarian Academy of Sciences, Centre for Energy Research, Budapest (Hungary); Karsa, Zoltan [NUBIKI Nuclear Safety Research Institute, Ltd., Budapest (Hungary)

    2015-09-15

    Homogeneous boron dilution scenarios in a VVER-440 reactor were analyzed using the coupled KIKO3D-ATHLET code. The scenarios are named ''homogeneous'' because of the very slow dilution caused by a rupture in the heat exchanger of the makeup system. Without the presented analyses, a significant contribution of the homogeneous boron dilution to the Core Damage Frequency (CDF) had to be assumed in the Probabilistic Safety Analyses (PSA). According to the combined results of the presented deterministic and probabilistic analyses, the final conclusion is that boron dilution transients don't give significant contribution to the CDF for the investigated VVER-440 NPP.

  11. Tuning field emission properties of boron nanocones with catalyst concentration

    Institute of Scientific and Technical Information of China (English)

    Li Chen; Tian Yuan; Wang Deng-Ke; Shi Xue-Zhao; Hui Chao; Shen Cheng-Min; Gao Hong-Jun

    2011-01-01

    Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe3O4 nanoparticles are pre-manipulated on Si(111) to form catalyst patterns of different densities. The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles. High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization. The field emission behaviour is optimal when the spacing distance is close to the nanocone length, which indicates that this simple spin spread method has great potential applications in electron emission nanodevices.

  12. Boron complexing with H-resorcinol and acidic hydroxyxanthene dyes

    Energy Technology Data Exchange (ETDEWEB)

    Nazarenko, V.A.; Flyantikova, G.V.; Chekirda, T.N. (AN Ukrainskoj SSR, Odessa. Fiziko-Khimicheskij Inst.)

    1984-01-01

    Complex formation of boron with H-resorcinol (hr; 2,4-dihydroxybenzene-azo -8-hydroxynaphtalene-3,6-disulfonic acid) and acidic hydroxyxanthene dyes (hxd: fluorescein, eosine, erathrosine). Mixed-ligand complexes with a ratio of r:hr:hxd=1:1:1 are formed at pH=5-6. The chemism of the complex formation of boron with H-resorcinol and fluorescein has been studied. The stability constant of the complex is 1.12x10/sup 21/, the conditional molar absorptivitis 1.80x10/sup 0/. This complex formation reaction was used for photometric determination of boron in natural water.

  13. Photoelectron spectroscopy of boron aluminum hydride cluster anions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haopeng; Zhang, Xinxing; Ko, Yeon Jae; Gantefoer, Gerd; Bowen, Kit H., E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Li, Xiang [Center for Space Science and Technology, University of Maryland–Baltimore County, Baltimore, Maryland 21250 (United States); Kiran, Boggavarapu, E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry and Physics, McNeese State University, Lake Charles, Louisiana 70609 (United States); Kandalam, Anil K. [Department of Physics, West Chester University, West Chester, Pennsylvania 19383 (United States)

    2014-04-28

    Boron aluminum hydride clusters are studied through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations. Boron aluminum hydride cluster anions, B{sub x}Al{sub y}H{sub z}{sup −}, were generated in a pulsed arc cluster ionization source and identified by time-of-flight mass spectrometry. After mass selection, their photoelectron spectra were measured by a magnetic bottle-type electron energy analyzer. The resultant photoelectron spectra as well as calculations on a selected series of stoichiometries reveal significant geometrical changes upon substitution of aluminum atoms by boron atoms.

  14. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  15. Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

    International Nuclear Information System (INIS)

    The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B68Y, α-B12Al, B4C, and B6Si are described. Transition metals appear to be effective dopants for B68Y and B4C

  16. Composite oxygen ion transport element

    Science.gov (United States)

    Chen, Jack C.; Besecker, Charles J.; Chen, Hancun; Robinson, Earil T.

    2007-06-12

    A composite oxygen ion transport element that has a layered structure formed by a dense layer to transport oxygen ions and electrons and a porous support layer to provide mechanical support. The dense layer can be formed of a mixture of a mixed conductor, an ionic conductor, and a metal. The porous support layer can be fabricated from an oxide dispersion strengthened metal, a metal-reinforced intermetallic alloy, a boron-doped Mo.sub.5Si.sub.3-based intermetallic alloy or combinations thereof. The support layer can be provided with a network of non-interconnected pores and each of said pores communicates between opposite surfaces of said support layer. Such a support layer can be advantageously employed to reduce diffusion resistance in any type of element, including those using a different material makeup than that outlined above.

  17. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

    Science.gov (United States)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

    1997-01-01

    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  18. Synthesis of boron nitride from boron containing poly(vinyl alcohol) as ceramic precursor

    Indian Academy of Sciences (India)

    M Das; S Ghatak

    2012-02-01

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD).

  19. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  20. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 5th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 22 in 1993. The solubility of the boron carrier play an important role in the BNCT. New water-soluble p-boronophenylalanine derivatives are synthesized and their biological activities are investigated (Chap. 2 and 3). Some chemical problems on the BNCT were discussed, and the complex formation reaction of hydroxylboryl compounds were studied by the paper electrophoresis (Chap. 4). The results of the medical investigation on the BNCT using BSH compounds are shown in Chap. 5. Syntheses of o- and m-boronophenylalanine were done and their optical resolution was tried (Chap. 6). The complex formation reaction of p-boronophenylalanine (BPA) with L-DOPA and the oxidation reaction of the analogs are found in Chap. 7. The pka of BPA were determined by the isotachophoresis (Chap. 8). The chemical nature of dihydroxyboryl compounds were investigated by an infrared spectroscopy and electrophoresis (Chap. 9). New synthetic methods of BPA and p-boronophenylserine using ester of isocyanoacetic acid are described in Chap. 10. The induction of chromosomal aberations by neutron capture reaction are discussed from a point of the biological view. The a of the presented papers are indexed individually. (J.P.N.)

  1. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  2. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  3. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  4. Hexagonal boron nitride and water interaction parameters

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  5. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp2-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  6. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  7. Excitons in boron nitride single layer

    Science.gov (United States)

    Galvani, Thomas; Paleari, Fulvio; Miranda, Henrique P. C.; Molina-Sánchez, Alejandro; Wirtz, Ludger; Latil, Sylvain; Amara, Hakim; Ducastelle, François

    2016-09-01

    Boron nitride single layer belongs to the family of two-dimensional materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining ab initio calculations and a tight-binding Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence (π ) and conduction (π*) bands the tight-binding analysis becomes quasiquantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground-state exciton is not a genuine Frenkel exciton, but a very localized tightly bound one. The other ones are similar to those found in transition-metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

  8. Hexagonal boron nitride and water interaction parameters.

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems. PMID:27131542

  9. Boron in Plants: Deficiency and Toxicity

    Institute of Scientific and Technical Information of China (English)

    Juan J. Camacho-Crist6bal; Jesus Rexach; Agustin González-Fontess

    2008-01-01

    Boron (B) is an essential nutrient for normal growth of higher plants, and B availability in soil and irrigation water is an important determinant of agricultural production. To date, a primordial function of B is undoubtedly its structural role in the cell wall; however, there is increasing evidence for a possible role of B in other processes such as the maintenance of plasma membrane function and several metabolic pathways. In recent years, the knowledge of the molecular basis of B deficiency and toxicity responses in plants has advanced greatly. The aim of this review is to provide an update on recent findings related to these topics, which can contribute to a better understanding of the role of B in plants.

  10. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Sørensen, P. G.; Björkdahl, O.;

    2006-01-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using...

  11. Microfabrication techniques for trapped ion quantum information processing

    CERN Document Server

    Britton, Joe

    2010-01-01

    Quantum-mechanical principles can be used to process information (QIP). In one approach, linear arrays of trapped, laser cooled ion qubits (two-level quantum systems) are confined in segmented multi-zone electrode structures. The ion trap approach to QIP requires trapping and control of numerous ions in electrode structures with many trapping zones. I investigated microfabrication of structures to trap, transport and couple large numbers of ions. Using 24Mg+ I demonstrated loading and transport between zones in microtraps made of boron doped silicon. This thesis describes the fundamentals of ion trapping, the characteristics of silicon-based traps amenable to QIP work and apparatus to trap ions and characterize traps. Microfabrication instructions appropriate for nonexperts are included. Ion motional heating was measured. Using MEMs techniques I built a Si micro-mechanical oscillator and demonstrated a method to reduce the kinetic energy of its lowest order mechanical mode via capacitive coupling to a driven...

  12. Recent Advances in Boron-Containing Conjugated Porous Polymers

    Directory of Open Access Journals (Sweden)

    Feng Qiu

    2016-05-01

    Full Text Available Porous polymers, integrating the advantages of porous materials and conventional polymers, have been well developed and exhibited tremendous attention in the fields of material, chemistry and biology. Of these, boron-containing conjugated porous polymers, featuring tunable geometric structures, unique Lewis acid boron centers and very rich physical properties, such as high specific surface, chargeable scaffold, strong photoluminescence and intramolecular charge transfer, have emerged as one of the most promising functional materials for optoelectronics, catalysis and sensing, etc. Furthermore, upon thermal treatment, some of them can be effectively converted to boron-doped porous carbon materials with good electrochemical performance in energy storage and conversion, extensively enlarging the applicable scope of such kinds of polymers. In this review, the synthetic approaches, structure analyses and various applications of the boron-containing conjugated porous polymers reported very recently are summarized.

  13. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  14. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  15. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-01

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.

  16. Isotopic compositions of boron in sediments and their implications

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Yingkai, X.

    of sediments are mostly closer to the boron isotopic composition of minerals. Such low delta sup(11)B values are attributed to the presence of borates, ulexite and other carbonate minerals in sediments of the salt lakes of Qaidam Basin....

  17. Spectrographic determination of traces of boron in steels

    International Nuclear Information System (INIS)

    A spectrographic method has been developed to determine quantitatively boron in steels in the 0.5 to 250 ppm concentration range. The samples are dissolved in acids and transformed into oxides, avoiding boron losses by the addition of mannitol. For the fluoride evolution of boron in the dc arc the following compounds have been considered: CuF2, LiF, NaF, and SrF2. CuF2, at a concentration of 10%, provides the highest line-to-background intensity ratio. An arc current of 5 amperes eliminates the interference from iron spectrum on the most sensitive boron line - B 2497.7 A. Variations in chromium and nickel contents have no effect on the analytical results. (author)

  18. Fractionation of Boron Isotopes in Icelandic Hydrothermal Systems

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, J.K.; Palmer, M.R.

    1995-01-01

    Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive {delta}{sup 11}B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive {delta}{sup 11}B than the high temperature systems, indicating fractionation of boron due to adsorption of the lighter isotope onto secondary minerals. Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems.

  19. Boron removal from metallurgical grade silicon by oxidizing refining

    Institute of Scientific and Technical Information of China (English)

    WU Ji-jun; MA Wen-hui; YANG Bin; DAI Yong-nian; K. MORITA

    2009-01-01

    A purification process was developed to remove impurity element boron from the metallurgical grade silicon by the electric arc furnace refining. The thermodynamic equilibria calculation and experiment to remove boron in the oxidizing atmosphere were performed and analyzed. Boron is removed as the gaseous species BxOy and BxHzOy in O2 and H2O-O2 atmosphere respectively. The equilibrium pressure of BxHzOy is 105-1010 times that of BxOy. Boron is removed and its content in silicon is reduced from 18×10-6 to 2×10-6 in the Ar-H2O-O2 atmosphere in the electric arc furnace.

  20. Phonon transport in single-layer Boron nanoribbons

    CERN Document Server

    Zhang, Zhongwei; Peng, Qing; Chen, Yuanping

    2016-01-01

    Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and tr...

  1. Boron isotope method for study of seawater intrusion

    Institute of Scientific and Technical Information of China (English)

    肖应凯; 尹德忠; 刘卫国; 王庆忠; 魏海珍

    2001-01-01

    A distinct difference in boron isotopes between seawater and terrestrial water is emphasized by δ11B values reported for seawater and groundwater, with an average of 38.8‰ and in the range of -8.9‰ to 9.8‰, respectively. The isotopic composition of boron in groundwater can be used to quantify seawater intrusion and identify intrusion types, e.g. seawater or brine intrusions with different chemical and isotopic characteristics, by using the relation of δ11B and chloride concentration. The feasibility of utilizing boron isotope in groundwater for studying seawater intrusion in Laizhou Bay Region, China, is reported in this study, which shows that boron isotope is a useful and excellent tool for the study of seawater intrusion.

  2. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Boron-nitride nanotubes (BNNTs) exhibit electroactive behavior in response to mechanical deformation, but the origin of this phenomenon is not well understood. Our...

  3. Electronic structure of boron-interstitial clusters in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Deak, Peter [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Gali, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Solyom, Andras [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Buruzs, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Frauenheim, Thomas [University of Paderborn, Theoretical Physics, Paderborn, D-33095 (Germany)

    2005-06-08

    Hybrid functional calculations within density functional theory are carried out to investigate the electronic structure of boron-interstitial clusters (BICs). A one-parameter hybrid functional is chosen is to give accurate results for the whole electronic structure (including the gap) and the elastic properties of crystalline silicon. It is shown that this approach provides dependable defect level positions in the gap. Investigation of the boron+vacancy and boron+self-interstitial centres gives a consistent description of the experimentally observed G10 and G28 centres. The electronic structure of BICs, which may affect the activation rate of boron implantation, are reported. The one-electron level positions of isolated B{sub n}I{sub m} defects are given.

  4. Analytical chemistry methods for boron carbide absorber material. [Standard

    Energy Technology Data Exchange (ETDEWEB)

    DELVIN WL

    1977-07-01

    This standard provides analytical chemistry methods for the analysis of boron carbide powder and pellets for the following: total C and B, B isotopic composition, soluble C and B, fluoride, chloride, metallic impurities, gas content, water, nitrogen, and oxygen. (DLC)

  5. Heavy ion cocktail beams at the 88 inch Cyclotron

    International Nuclear Information System (INIS)

    Cyclotrons in combination with ECR ion sources provide the ability to accelerate ''cocktails'' of ions. A cocktail is a mixture of ions of near-identical mass-to-charge (m/q) ratio. The different ions cannot be separated by the injector mass-analyzing magnet and are tuned out of the ion source together. The cyclotron then is utilized as a mass analyzer by shifting the accelerating frequency. This concept was developed soon after the first ECR ion source became operational at the 88-Inch Cyclotron and has since become a powerful tool in the field of heavy ion radiation effects testing. Several different ''cocktails'' at various energies are available at the 88-Inch cyclotron for radiation effect testing, covering a broad range of linear energy transfer and penetration depth. Two standard heavy ion cocktails at 4.5 MeV/nucleon and 10 MeV/nucleon have been developed over the years containing ions from boron to bismuth. Recently, following requests for higher penetration depths, a 15MeV/nucleon heavy ion cocktail has been developed. Up to nine different metal and gaseous ion beams at low to very high charge states are tuned out of the ion source simultaneously and injected together into the cyclotron. It is therefore crucial to balance the ion source very carefully to provide sufficient intensities throughout the cocktail. The paper describes the set-up and tuning of the ion source for the various heavy ion cocktails

  6. For boron neutron capture therapy,synthesizing boron-polymer compounds and testing in laboratory conditions

    International Nuclear Information System (INIS)

    The aim of this project is to establish a focus point at Turkish Atomic Energy Authority (TAEA) in the field of Boron Neutron Capture Therapy which is a binary radiotherapy method for brain tumours. Moreover in the scope of the project, a new alternative of 10B-carrier compounds will be synthesized, the neutron source will be determined and the infrastructure to start the clinical trials of BNCT in our country will be established. BNCT is a binary radiotherapy method and the successful of this method is depend on the synthesized boron compounds which have the selective targeting property with tumour cells and neutron optimization. The water-soluble polymer based boron compounds having biochemical and physiological properties will be synthesized and cell culture experiment will be done. In addition, after the neutron source is set up in our country, the infrastructure studies will be started in order to start the clinical trials of BNCT. In this project, there are three different groups as boron compounds, neutron physics and medical group. Neutron physics group is starting the calculations of neutron beam parameters using in BNCT application. But, medical group has no active studies yet. Boron compounds group has been carried out two different experimental studies. In the first experimental study, functional groups have been bound to boron containing polymers to enhance the selectively targeting property and characterized by various analysis methods. Later, cell culture experiment will be done. The first study has been carried out with Hacettepe University. Up to present, completed studies are listed as: -Maleic anhydride oligomer was synthesized and then 2-aminoethyl diphenyl borate (2-AEPB) and monomethoxy poly(ethylene glycol) (PEG) was bound to this oligomer, respectively. Thus, [MAH]n-g1-2-AEPB-g2-PEG was synthesized. -2-AEPB compound were bound to poly(acrylic acid) polymer at different three mole ratio.Then, the selected Poli(Ac)-g1-2-AEPB polymer was

  7. Electrolyte compositions for lithium ion batteries

    Science.gov (United States)

    Sun, Xiao-Guang; Dai, Sheng; Liao, Chen

    2016-03-29

    The invention is directed in a first aspect to an ionic liquid of the general formula Y.sup.+Z.sup.-, wherein Y.sup.+ is a positively-charged component of the ionic liquid and Z.sup.- is a negatively-charged component of the ionic liquid, wherein Z.sup.- is a boron-containing anion of the following formula: ##STR00001## The invention is also directed to electrolyte compositions in which the boron-containing ionic liquid Y.sup.+Z.sup.- is incorporated into a lithium ion battery electrolyte, with or without admixture with another ionic liquid Y.sup.+X.sup.- and/or non-ionic solvent and/or non-ionic solvent additive.

  8. Dynamic compaction of boron carbide by a shock wave

    Science.gov (United States)

    Buzyurkin, Andrey E.; Kraus, Eugeny I.; Lukyanov, Yaroslav L.

    2016-10-01

    This paper presents experiments on explosive compaction of boron carbide powder and modeling of the stress state behind the shock front at shock loading. The aim of this study was to obtain a durable low-porosity compact sample. The explosive compaction technology is used in this problem because the boron carbide is an extremely hard and refractory material. Therefore, its compaction by traditional methods requires special equipment and considerable expenses.

  9. Manufacturing uniform field silicon drift detector using double boron layer

    International Nuclear Information System (INIS)

    Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field

  10. Disorder and defects are not intrinsic to boron carbide

    OpenAIRE

    Swastik Mondal; Elena Bykova; Somnath Dey; Sk. Imran Ali; Natalia Dubrovinskaia; Leonid Dubrovinsky; Gleb Parakhonskiy; Sander van Smaalen

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichio...

  11. Cubic boron nitride- a new material for ultracold neutron application

    International Nuclear Information System (INIS)

    For the first time, the Fermi potential of cubic boron nitride (cBN) was measured at the ultra cold neutron source at the TRIGA reactor, Mainz using the time of flight method (TOF). The investigated samples have a Fermi potential of about 300 neV. Because of its good dielectric characteristics, cubic boron nitride could be used as suitable coating for insulator in storage chambers of future EDM projects. This talk presents recent results and an outlook on further investigations.

  12. Explicitly correlated wave function for a boron atom

    CERN Document Server

    Puchalski, Mariusz; Pachucki, Krzysztof

    2015-01-01

    We present results of high-precision calculations for a boron atom's properties using wave functions expanded in the explicitly correlated Gaussian basis. We demonstrate that the well-optimized 8192 basis functions enable a determination of energy levels, ionization potential, and fine and hyperfine splittings in atomic transitions with nearly parts per million precision. The results open a window to a spectroscopic determination of nuclear properties of boron including the charge radius of the proton halo in the $^8$B nucleus.

  13. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    OpenAIRE

    Samantha Bruzzone; Demetrio Logoteta; Gianluca Fiori; Giuseppe Iannaccone

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double...

  14. Does boron affect hormone levels of barley cultivars?

    OpenAIRE

    Muavviz Ayvaz; Mesut Koyuncu; Avni Guven; FAGERSTEDT, KURT V.

    2012-01-01

    Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare) cultivars (Vamik Hoca and Efes 98) were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm) ...

  15. Boron-oxygen polyanion in the crystal structure of tunellite

    Science.gov (United States)

    Clark, J.R.

    1963-01-01

    The crystal structure of tunellite, SrO??3B2O 3??4H2O, with infinite sheets of composition n[B6O9(OH)2]2-, has cations and water molecules in the spaces within the sheets. Adjacent sheets are held together by hydrogen bonding through the water molecules. The boron-oxygen polyanions provide the first example in hydrated borate crystals of one oxygen linked to three borons.

  16. Experimental realization of two-dimensional boron sheets

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Zhong, Qing; Li, Wenbin; Li, Shuai; Li, Hui; Cheng, Peng; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-06-01

    A variety of two-dimensional materials have been reported in recent years, yet single-element systems such as graphene and black phosphorus have remained rare. Boron analogues have been predicted, as boron atoms possess a short covalent radius and the flexibility to adopt sp2 hybridization, features that favour the formation of two-dimensional allotropes, and one example of such a borophene material has been reported recently. Here, we present a parallel experimental work showing that two-dimensional boron sheets can be grown epitaxially on a Ag(111) substrate. Two types of boron sheet, a β12 sheet and a χ3 sheet, both exhibiting a triangular lattice but with different arrangements of periodic holes, are observed by scanning tunnelling microscopy. Density functional theory simulations agree well with experiments, and indicate that both sheets are planar without obvious vertical undulations. The boron sheets are quite inert to oxidization and interact only weakly with their substrate. We envisage that such boron sheets may find applications in electronic devices in the future.

  17. Spontaneous Boron-doping of Graphene at Room Temperature

    Science.gov (United States)

    Pan, Lida; Que, Yande; Du, Shixuan; Gao, Hongjun; Pantelides, Sokrates T.

    2015-03-01

    Doping graphene with boron or nitrogen is an effective way to modify its electronic properties. However, the reaction barrier for introducing these impurities is quite high, making the doping process difficult. In this work, we propose a low-energy reaction route derived from first-principles calculations and subsequently validated by experiments. The calculations show that, when graphene is placed on a ruthenium substrate and exposed to atomic boron, boron atoms can incorporate substitutionally into the graphene sheet with an energy barrier about 0.1 eV, displacing carbon atoms below the graphene sheet where they migrates away. This result suggests that spontaneous doping by boron can take place at room temperature. Following the prediction, we grew high-quality graphene on the Ru(0001) surface and then expose it to B2H6 which decomposes into atomic boron. XPS and STM results indicate that boron dopes graphene substantially without disturbing the graphene lattice, confirming the theoretical predictions. Doping by nitrogen and co-doping by B and N will also be discussed.

  18. Boron biodistribution after boronophenylalanine-fructose (BPA-F) infusion

    Energy Technology Data Exchange (ETDEWEB)

    Kallio, M.; Kulvik, M.; Laakso, J.; Ruokonen, I.; Vaehaetalo, J.; Faerkkilae, M. [University of Helsinki (Finland); Rasilainen, M.; Jaerviluoma, E. [Helsinki University Central Hospital, Pharmacy, Helsinki (Finland)

    2000-10-01

    In vivo dynamic tissue boron concentration measurements are not available for BNCT in clinical settings. Whole blood boron concentrations and converting factors are currently used in stead to estimate the boron concentrations in the target tissues and the ensuing radiation doses. We studied with ICP-AES the boron concentrations in blood after 2 hour intravenous infusions of BPA-F in 8 patients (290 mg/kg). As BPA-F is water soluble we calculated respective doses per lean body weight (LBW) (360 - 471 mg/kg) - the peak plasma concentrations and area under plasma boron concentration time curve correlated with the mg/LBW dose, but not with dose per skin surface area (mg/m{sup 2}). The mean boron concentrations in plasma, whole blood and red cells at the infusion were 32.1 {+-} 3.3, 23.3 {+-} 2.4 and 9.5 {+-} 2.8, respectively. LBW doses should be considered to ensure more homogenous dosing and BNCT irradiation. (author)

  19. Lattice vibrations of icosahedral boron-rich solids

    Energy Technology Data Exchange (ETDEWEB)

    Beckel, C.L.; Yousaf, M. (The University of New Mexico, Albuquerque, New Mexico 87131 (United States))

    1991-07-01

    The rhombohedral lattices for {alpha}-boron, boron arsenide, and boron phosphide are each of D{sub 3d} symmetry and have bases that include B{sub 12} icosahedra. Boron carbide with B{sub 4}C stoichiometry has near-D{sub 3d} symmetry and is almost certainly composed of B{sub 11}C icosahedra and C-B-C chains. Comparable classical force field models are applied to each of these crystals to correlate q=0 phonon structure with experimental Raman and IR spectra. We here describe our methods and contrast interaction strengths for different materials. Vibrations are correlated in the different crystals through normal mode eigenvector expansions. Acoustic wave velocities from Brillouin zone dispersion curves in two distinct symmetry-axis directions are presented and contrasted for {alpha}-boron and B{sub 12}As{sub 2}. The origin of lines with anomalous polarization and width in {alpha}-boron, B{sub 12}As{sub 2}, and B{sub 12}P{sub 2} is considered.

  20. Colorimetric determination of Boron-10 in macromolecular delivery agents

    International Nuclear Information System (INIS)

    A polyglycerol with dendritic structure (PGLD) was synthesized by the ring opening polymerization of deprotonated glycidol using a polyglycerol as core functionality in a step-growth process denominated divergent synthesis. After PGLD reaction with 10B-enriched boric acid there was a marked increase in the bulk viscosity of the PGLD dendrimer evidencing the polyester formation. Gel permeation chromatography (GPC) analysis was used to characterize the molecular weight and the polydispersivity of the synthesized PGLD dendrimer. A dendritic polyglycerol structure with Mn value of 16.7 kDa and a narrow polydispersivity (Mw/Mn = 1.05) was obtained in this work. 1H-NMR and 13C-NMR measurements were employed to assess the degree of branching (DB) in PGLD. The DB of 0.85 indicates the tendency of a dentritic structure for the PGLD synthesized in this work. The boron-10 concentration was dependent of the PGLD generation. A selective reagent, curcumine, was studied for spectrophotometric determination of boron in polyglycerol dendrimers. Boron reacts with curcumine to form a complex, which has a maximum absorption peak at 552 nm. Under the optimal conditions, Beer's law was obeyed over the range 0∼20 μg of boron in 25 mL of solution. The biological assays indicate the PGLD-B with boron-10 concentration of 25 mg10B/gPGLD as the most promising macromolecule enriched with boron-10 for the BNCT therapy. (author)