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Sample records for boron ions

  1. Ion implantation of boron in germanium

    International Nuclear Information System (INIS)

    Jones, K.S.

    1985-05-01

    Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

  2. Axial channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carnera, A.; Gasparotto, A.

    1992-01-01

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10 11 and 1x10 15 atoms/cm 2 . The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S c , was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S e = KE p with p [100] = 0.469±0.010 and p [110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

  3. Modeling of interstitial diffusion of ion-implanted boron

    International Nuclear Information System (INIS)

    Velichko, O.I.; Knyazheva, N.V.

    2009-01-01

    A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are created continuously during annealing due to generation, dissolution, or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. A simulation of boron redistribution during thermal annealing for 60 s at a temperature of 850 C has been carried out. The calculated profile agrees well with the experimental data. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nm. It was also obtained that approximately 1.94% of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with crystal lattice defects. (authors)

  4. Defects in boron ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.

    1975-05-01

    The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

  5. Operation and Applications of the Boron Cathodic Arc Ion Source

    International Nuclear Information System (INIS)

    Williams, J. M.; Freeman, J. H.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.

    2008-01-01

    The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.

  6. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  7. Stopping characteristics of boron and indium ions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

    2016-12-15

    The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

  8. Biological effects of accelerated boron, carbon, and neon ions

    International Nuclear Information System (INIS)

    Grigoryev, Yu.G.; Ryzhov, N.I.; Popov, V.I.

    1975-01-01

    The biological effects of accelerated boron, carbon, and neon ions on various biological materials were determined. The accelerated ions included 10 B, 11 B, 12 C, 20 Ne, 22 Ne, and 40 Ar. Gamma radiation and x radiation were used as references in the experiments. Among the biological materials used were mammalian cells and tissues, yeasts, unicellular algae (chlorella), and hydrogen bacteria. The results of the investigation are given and the biophysical aspects of the problem are discussed

  9. Measuring the sensitivity of a boron-lined ion chamber

    International Nuclear Information System (INIS)

    Barton, D.M.

    1992-03-01

    Boron-lined ion chambers are used to monitor external neutron flux from fissionable materials assembled at the Los Alamos Critical Assembly Experiment Facility. The sensitivity of these chambers must be measured periodically in order to detect changes in filling gas and to evaluate other factors that may affect chamber performance. We delineate a procedure to measure ion chamber response using a particular neutron source ( 239 PuBe) in a particular moderating geometry of polyethylene. We also discuss use of the amplifier, high-voltage power supply, recorders, and scram circuits that comprise the complete ion chamber monitoring system

  10. Flash lamp annealing of ion implanted boron profiles

    International Nuclear Information System (INIS)

    Wieser, E.; Syhre, H.; Ruedenauer, F.G.; Steiger, W.

    1983-05-01

    The diffusion behaviour of ion implanted boron profiles (5x10E15 B/cm 2 , 50keV) in silicon at 800 0 C and 900 0 C has been compared for samples with and without foregoing flahs - lamp annealing of the radiation damage. The observed differences are discussed with respect to mechanisms of diffusion inhibition in the high concentration region. (Author) [de

  11. Recombination and photosensitivity centres in boron nitride irradiated with ions

    International Nuclear Information System (INIS)

    Kabyshev, A.; Konusov, F.; Lopatin, V.

    2001-01-01

    The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

  12. Sliding behavior of boron ion-implanted 304 stainless steel

    International Nuclear Information System (INIS)

    Shrivastava, S.; Jain, A.; Singh, C.

    1995-01-01

    The authors have studied the influence of boron ion implantation on the friction and wear behavior of 304 stainless steel. The authors find an increase in microhardness following implantation. The authors also observed a reduction in wear and coefficient of friction. They have measured the microhardness, inside the wear tracks and have found a large increase in the values in the unimplanted specimens and only a small increase in the implanted specimens. These observations have thrown light on the change in the wear mechanism between the two cases. The authors have also used Scanning Electron Microscopy and Energy Dispersive Analysis of X-rays, to characterize the differences in the mode of wear. The change in wear behavior is brought about by the ability of boron to prevent the surface from transforming into a hard brittle layer during wear

  13. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Yilmaz, M. Tolga; Kocakerim, M. Muhtar

    2005-01-01

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions

  14. Boron

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  15. Amorphous boron nanorod as an anode material for lithium-ion batteries at room temperature.

    Science.gov (United States)

    Deng, Changjian; Lau, Miu Lun; Barkholtz, Heather M; Xu, Haiping; Parrish, Riley; Xu, Meiyue Olivia; Xu, Tao; Liu, Yuzi; Wang, Hao; Connell, Justin G; Smith, Kassiopeia A; Xiong, Hui

    2017-08-03

    We report an amorphous boron nanorod anode material for lithium-ion batteries prepared through smelting non-toxic boron oxide in liquid lithium. Boron in theory can provide capacity as high as 3099 mA h g -1 by alloying with Li to form B 4 Li 5 . However, experimental studies of the boron anode have been rarely reported for room temperature lithium-ion batteries. Among the reported studies the electrochemical activity and cycling performance of the bulk crystalline boron anode material are poor at room temperature. In this work, we utilized an amorphous nanostructured one-dimensional (1D) boron material aiming at improving the electrochemical reactivity between boron and lithium ions at room temperature. The amorphous boron nanorod anode exhibited, at room temperature, a reversible capacity of 170 mA h g -1 at a current rate of 10 mA g -1 between 0.01 and 2 V. The anode also demonstrated good rate capability and cycling stability. The lithium storage mechanism was investigated by both sweep voltammetry measurements and galvanostatic intermittent titration techniques (GITTs). The sweep voltammetric analysis suggested that the contributions from lithium ion diffusion into boron and the capacitive process to the overall lithium charge storage are 57% and 43%, respectively. The results from GITT indicated that the discharge capacity at higher potentials (>∼0.2 V vs. Li/Li + ) could be ascribed to a capacitive process and at lower potentials (ions and the amorphous boron nanorod. This work provides new insights into designing nanostructured boron materials for lithium-ion batteries.

  16. Low energy implantation of boron with decaborane ions

    Science.gov (United States)

    Albano, Maria Angela

    The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

  17. Destruction of C60 films by boron ion bombardment

    International Nuclear Information System (INIS)

    Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

    1995-01-01

    C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

  18. Boronic ionogel electrolytes to improve lithium transport for Li-ion batteries

    International Nuclear Information System (INIS)

    Lee, Albert S.; Lee, Jin Hong; Hong, Soon Man; Lee, Jong-Chan; Hwang, Seung Sang; Koo, Chong Min

    2016-01-01

    Boron containing ionogels were fabricated through chemical crosslinking of boron allyloxide with polyethylene glycol dimethacrylate in an ionic liquid electrolyte solution to obtain mechanically robust gels. Because of the relatively small concentration of crosslinking agent required to fully solidify the ionic liquid electrolyte, good characters of high ionic conductivity, high thermal stability, and good electrochemical stability were observed. A spectroscopic investigation of the boronic ionogels revealed that the lithium mobility was noticeably enhanced compared with ionogels fabricated without the boronic crosslinker, leading to promising Li-ion battery performance at elevated temperatures.

  19. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  20. Amorphisation of boron carbide under slow heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gosset, D., E-mail: Dominique.gosset@cea.fr [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Miro, S. [CEA Saclay, DEN, DANS, DMN, SRMP, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif/Yvette (France); Doriot, S. [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Moncoffre, N. [CNRS/IN2P3/IPNL, 69622, Villeurbanne (France)

    2016-08-01

    Boron carbide B{sub 4}C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B{sub 4}C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10{sup −2} displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  1. Subcellular boron and fluorine distributions with SIMS ion microscopy in BNCT and cancer research

    Energy Technology Data Exchange (ETDEWEB)

    Subhash Chandra

    2008-05-30

    The development of a secondary ion mass spectrometry (SIMS) based technique of Ion Microscopy in boron neutron capture therapy (BNCT) was the main goal of this project, so that one can study the subcellular location of boron-10 atoms and their partitioning between the normal and cancerous tissue. This information is fundamental for the screening of boronated drugs appropriate for neutron capture therapy of cancer. Our studies at Cornell concentrated mainly on studies of glioblastoma multiforme (GBM). The early years of the grant were dedicated to the development of cryogenic methods and correlative microscopic approaches so that a reliable subcellular analysis of boron-10 atoms can be made with SIMS. In later years SIMS was applied to animal models and human tissues of GBM for studying the efficacy of potential boronated agents in BNCT. Under this grant the SIMS program at Cornell attained a new level of excellence and collaborative SIMS studies were published with leading BNCT researchers in the U.S.

  2. Subcellular boron and fluorine distributions with SIMS ion microscopy in BNCT and cancer research

    International Nuclear Information System (INIS)

    Subhash, Chandra

    2008-01-01

    The development of a secondary ion mass spectrometry (SIMS) based technique of Ion Microscopy in boron neutron capture therapy (BNCT) was the main goal of this project, so that one can study the subcellular location of boron-10 atoms and their partitioning between the normal and cancerous tissue. This information is fundamental for the screening of boronated drugs appropriate for neutron capture therapy of cancer. Our studies at Cornell concentrated mainly on studies of glioblastoma multiforme (GBM). The early years of the grant were dedicated to the development of cryogenic methods and correlative microscopic approaches so that a reliable subcellular analysis of boron-10 atoms can be made with SIMS. In later years SIMS was applied to animal models and human tissues of GBM for studying the efficacy of potential boronated agents in BNCT. Under this grant the SIMS program at Cornell attained a new level of excellence and collaborative SIMS studies were published with leading BNCT researchers in the U.S.

  3. Methods for separating boron from borated paraffin wax and its determination by ion chromatography

    International Nuclear Information System (INIS)

    Jeyakumar, S.

    2015-01-01

    Boron compounds are found to be useful in shielding against high-energy neutrons. In radiotherapy treatments, in order to protect occupational workers and patients from the undesirable neutron and gamma doses, paraffin wax containing B 4 C/boric acid is used. Low-level borate wastes generated from the nuclear power plants have been immobilized with paraffin wax using a concentrate waste drying system (CWDS). Borated paraffin waxes are prepared by mixing calculated amounts of either boric acid or boron carbide with the molten wax. This necessitates the determination of boron at different locations in order to check the homogeneous distribution of B over the borated wax. The determination of boron in nuclear materials is inevitable due to its high neutron absorption cross section. For the determination of boron in borated waxes, not many methods have been reported. A method based on the pyrohydrolysis extraction of boron and its quantification with ion chromatography was proposed for paraffin waxes borated with H 3 BO 3 and B 4 C. The B 4 C optimum pyrohydrolysis conditions were identified. Wax samples were mixed with U 3 O 8 , which prevents the sample from flare up, and also accelerates the extraction of boron. Pyrohydrolysis was carried out with moist O 2 at 950℃ for 60 and 90 min for wax with H 3 BO 3 and wax with B 4 C, respectively. Two simple methods of separation based on alkali extraction and melting wax in alkali were also developed exclusively for wax with H 3 BO 3 . In all the separations, the recovery of B was above 98%. During IC separation, B was separated as boron-mannitol anion complex. Linear calibration was obtained between 0.1 and 50 ppm of B, and LOD was calculated as 5 ppb (S/N=3). The reproducibility was better than 5% (RSD)

  4. Boron ion irradiation induced structural and surface modification of glassy carbon

    International Nuclear Information System (INIS)

    Kalijadis, Ana; Jovanović, Zoran; Cvijović-Alagić, Ivana; Laušević, Zoran

    2013-01-01

    The incorporation of boron into glassy carbon was achieved by irradiating two different types of targets: glassy carbon polymer precursor and carbonized glassy carbon. Targets were irradiated with a 45 keV B 3+ ion beam in the fluence range of 5 × 10 15 –5 × 10 16 ions cm −2 . For both types of targets, the implanted boron was located in a narrow region under the surface. Following irradiation, the polymer was carbonized under the same condition as the glassy carbon samples (at 1273 K) and examined by Raman spectroscopy, temperature programmed desorption, hardness and cyclic voltammetry measurements. Structural analysis showed that during the carbonization process of the irradiated polymers, boron is substitutionally incorporated into the glassy carbon structure, while for irradiated carbonized glassy carbon samples, boron irradiation caused an increase of the sp 3 carbon fraction, which is most pronounced for the highest fluence irradiation. Further analyses showed that different nature of boron incorporation, and thus changed structural parameters, are crucial for obtaining glassy carbon samples with modified mechanical, chemical and electrochemical properties over a wide range

  5. Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide

    OpenAIRE

    Machaka, Ronald; Mwakikunga, Bonex W.; Manikandan, Elayaperumal; Derry, Trevor E.; Sigalas, Iakovos; Herrmann, Mathias

    2012-01-01

    Results on a systematic study on the effects of ion implantation on the near-surface mechanical and structural properties of boron suboxide (B 6O) prepared by uniaxial hot pressing are reviewed. 150keV fluorine ions at fluences of up to 5.0 × 10 16ions/cm 2 were implanted into the ultrahard ceramic material at room temperature and characterized using Raman spectroscopy, atomic force microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Evidence of ion-beam-as...

  6. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation

    International Nuclear Information System (INIS)

    Mrotchek, I.

    2007-01-01

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and ∼5.10 17 ions/cm 2 fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co 3 W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load

  7. Ion implantation artifacts observed in depth profiling boron in silicon by secondary ion mass spectrometry

    International Nuclear Information System (INIS)

    Chi, P.; Simons, D.S.

    1987-01-01

    A comparison study of depth profiling by secondary ion mass spectrometry (SIMS) and neutron depth profiling (NDP) was recently conducted. The specimens were portions of 5 cm diameter single crystal silicon slices in which B-10 had been implanted at various fluences and energies. NDP measurements were made on a 13 mm diameter area at the center of the wafers. SIMS measurements were taken from a 60 μm diameter area approximately 16 mm from the center of the wafer. One observation that emerged from this work was an apparent discrepancy between the profiles of B-10 measured by DNP and SIMS. The peaks of the SIMS profiles were typically deeper than those of NDP by as much as 30 nm, which is 10% of the projected range for a 70 keV implant. Moreover, the profiles could not be made to coincide by either a constant shift or a proportional change of one depth scale with respect to the other. The lateral inhomogeneity of boron that these experiments have demonstrated arises from the variable contribution of ion channeling during implantation

  8. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  9. Modification of structure and properties of tin – fullerite films irradiated by boron ions

    International Nuclear Information System (INIS)

    Baran, L.V.

    2013-01-01

    By methods of raster electronic, atomic force and electronic force microscopy and X-ray diffraction the research of change of structure, phase composition and local electronic properties of the tin - fullerite films, subjected to implantation by B + ions (E = 80 keV, F = 5×10 17 ions/cm 2 ) are submitted. It is established, that as a result of boron ion implantation of two-layered tin - fullerite films, tin and fullerite interfusion on sues, that is the solid-phase interaction and as a result of which forms the heterophase with heterogeneous local electric properties. (authors)

  10. Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Wang, D J; Tamai, K; Li, L A; Ao, J-P; Ohno, Y; Shinkai, S; Miyashita, T; Motoyama, S-I

    2014-01-01

    We report the investigation of boron ion implantation as a device field isolation process for GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure. In the mesa isolation region of a bar-type MOSFET, a parasitic MOS-channel existed and widened the designed channel width, which would result in an overestimated mobility compared with a ring-type MOSFET. After boron ions implantation in the isolation region, the overestimation of field-effect mobility of bar-type MOSFETs was eliminated. The sub-threshold characteristics and on-state drain current of the bar-type MOSFETs coincide with the ring-type devices. Long-channel ring-type MOSFETs, with and without ion implantation, were fabricated on the recess region to evaluate the sub-threshold characteristics. The MOSFETs with boron ions implanted into the recess region showed a low drain current up to the gate bias of 10V. The result indicated that boron ion implantation prevented the formation of parasitic MOS-channel in the isolation region and achieved field isolation. The current–voltage characteristics of MOSFETs with the normal recess condition demonstrated no degradation of device performance after boron ions implanted into the isolation region. Boron ion implantation by further optimization can be a field isolation method for GaN MOSFETs. (paper)

  11. Evidence of amorphisation of B{sub 4}C boron carbide under slow, heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gosset, D., E-mail: dominique.gosset@cea.fr [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Miro, S. [CEA, DEN, DMN-SRMP-JANNUS, F-91191 Gif/Yvette (France); Doriot, S. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Victor, G. [CNRS-IN2P3-IPNL, F-69622 Villeurbanne (France); Motte, V. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France)

    2015-12-15

    Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (10{sup 14}/cm{sup 2}, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 10{sup 15}/cm{sup 2} then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B{sub 6}Si,…).

  12. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  13. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  14. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    International Nuclear Information System (INIS)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

    2015-01-01

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

  15. Boron lattice location in room temperature ion implanted Si crystal

    International Nuclear Information System (INIS)

    Piro, A.M.; Romano, L.; Mirabella, S.; Grimaldi, M.G.

    2005-01-01

    The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 x 10 2 B/cm 3 were grown by Molecular Beam Epitaxy. Point defect engineering techniques, with light energetic ion implants, have been applied to generate an I Si uniform injection in the electrically active layer. The displacement of B atoms out of substitutional lattice sites was induced by 650 keV proton irradiations at room temperature (R.T.) and the resultant defect configuration was investigated by ion channelling and Nuclear Reaction Analysis (NRA) techniques. Angular scans were measured both through and axes along the (1 0 0) plane using the 11 B(p,α) 8 Be nuclear reaction at 650 keV proton energy. Monte Carlo simulated angular scans were calculated considering a variety of theoretical defect configurations, supported by literature, and compared with experimental data. Our experimental scans can be fitted by a linear combination of small (0.3 A) and large B displacements (1.25 A) along the direction, compatible with the B-dumbbell oriented along as proposed by ab initio calculations

  16. Boron removal from aqueous solutions by ion-exchange resin: Column sorption-elution studies

    International Nuclear Information System (INIS)

    Koese, T. Ennil; Oztuerk, Nese

    2008-01-01

    A column sorption-elution study was carried out by using a strong base anion-exchange resin (Dowex 2 x 8) for the removal of boron from aqueous solutions. The breakthrough curve was obtained as a function of feed flow rate and the total and breakthrough capacity values of the resin were calculated. The boron on the resin was quantitatively eluted with 0.5 M HCl solution at different flow rates. Three consecutive sorption-elution-washing-regeneration-washing cycles were applied to the resin in order to investigate the reusability of the ion-exchange resin. Total capacity values remained almost the same after three sorption-elution-regeneration cycles. The Thomas and the Yoon-Nelson models were applied to experimental data to predict the breakthrough curves and to determine the characteristic column parameters required for process design. The results proved that the models would describe the breakthrough curves well

  17. Lamb shift in muonic ions of lithium, beryllium and boron

    OpenAIRE

    Krutov, A. A.; Martynenko, A. P.; Martynenko, F. A.; Sukhorukova, O. S.

    2016-01-01

    We present a precise calculation of the Lamb shift $(2P_{1/2}-2S_{1/2})$ in muonic ions $(\\mu ^6_3Li)^{2+},~(\\mu ^7_3Li)^{2+}$, $(\\mu ^9_4Be)^{3+},~(\\mu ^{10}_4Be)^{3+}$, $(\\mu ^{10}_5B)^{4+},~(\\mu ^{11}_5B)^{4+}$. The contributions of orders $\\alpha^3\\div\\alpha^6$ to the vacuum polarization, nuclear structure and recoil, relativistic effects are taken into account. Our numerical results are consistent with previous calculations and improve them due to account of new corrections. The obtained...

  18. Salinity’s influence on boron toxicity in broccoli: II. Impacts on boron uptake, uptake mechanisms and tissue ion relations.

    Science.gov (United States)

    Limited research has been conducted on the interactive effects of salinity and boron stresses on plants despite their common occurrence in natural systems. The purpose of this research was to determine and quantify the interactive effects of salinity, salt composition and boron on broccoli (Brassica...

  19. Structural modifications induced by ion irradiation and temperature in boron carbide B{sub 4}C

    Energy Technology Data Exchange (ETDEWEB)

    Victor, G., E-mail: g.victor@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pipon, Y.; Bérerd, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Institut Universitaire de Technologie (IUT) Lyon-1, Université Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France); Toulhoat, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); CEA-DEN, Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Djourelov, N. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd, BG-1784 Sofia (Bulgaria); ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele (Romania); Miro, S. [CEA-DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Baillet, J. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pradeilles, N.; Rapaud, O.; Maître, A. [SPCTS, UMR CNRS 7315, Centre Européen de la céramique, University of Limoges (France); Gosset, D. [CEA, Saclay, DMN-SRMA-LA2M, 91191 Gif-sur-Yvette (France)

    2015-12-15

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B{sub 4}C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B{sub 4}C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (S{sub e} ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B{sub 4}C structure under irradiation.

  20. Structural modifications induced by ion irradiation and temperature in boron carbide B4C

    Science.gov (United States)

    Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

    2015-12-01

    Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

  1. Monte Carlo simulation of boron-ion implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.

    1991-01-01

    A physically based Monte Carlo boron implantation model developed comprehends previously neglected but important implant parameters such as native oxide layers, wafer temperature, beam divergence, tilt angle, rotation (twist) angle, and dose, in addition to energy. This model uses as its foundation the MARLOWE Monte Carlo simulation code developed at Oak Ridge National Laboratory for the analysis of radiation effects in materials. This code was carefully adapted for the simulation of ion implantation, and a number of significant improvements have been made, including the addition of atomic pair specific interatomic potentials, the implementation of a newly developed local electron concentration dependent electronic stopping model, and the implementation of a newly developed cumulative damage model. This improved version of the code, known as UT-MARLOWE, allows boron implantation profiles to be accurately predicted as a function of energy, tilt angle, rotation angle, and dose. This code has also been used in the development and implementation of an accurate and efficient two-dimensional boron implantation model

  2. Feasibility study of Boron Nitride coating on Lithium-ion battery casing

    International Nuclear Information System (INIS)

    Saw, L.H.; Ye, Y.; Tay, A.A.O.

    2014-01-01

    Increasing in public awareness about global warming and exhaustion of energy resources has led to a flourishing electric vehicle industry that would help realize a zero-emission society. The thermal management of battery packs, which is an essential issue closely linked to a number of challenges for electric vehicles including cost, safety, reliability and lifetime, has been extensively studied. However, relatively little is known about the thermal effect of polymer insulation on the Lithium-ion battery casing. This study investigates the feasibility of replacing the polymer insulation with a Boron Nitride coating on the battery casing using the Taguchi experimental method. The effect of casing surface roughness, coating thickness and their interaction were examined using orthogonal array L 9 (3 4 ). Nominal the best is chosen for the optimization process to achieve optimum adhesion strength. In addition, the thermal improvements of the coating as compared to conventional polymer insulator on the battery are further investigated. - Highlights: • We studied the Boron Nitride coating on battery casing using Taguchi method. • We investigated the effect of surface roughness and coating thickness on adhesion strength. • We compared the effect of coating and polymer insulator in heat transfer. • The Boron Nitride coating could enhance the thermal management of the battery

  3. Theoretical isotopic fractionation between structural boron in carbonates and aqueous boric acid and borate ion

    Science.gov (United States)

    Balan, Etienne; Noireaux, Johanna; Mavromatis, Vasileios; Saldi, Giuseppe D.; Montouillout, Valérie; Blanchard, Marc; Pietrucci, Fabio; Gervais, Christel; Rustad, James R.; Schott, Jacques; Gaillardet, Jérôme

    2018-02-01

    The 11B/10B ratio in calcite and aragonite is an important proxy of oceanic water pH. However, the physico-chemical mechanisms underpinning this approach are still poorly known. In the present study, we theoretically determine the equilibrium isotopic fractionation properties of structural boron species in calcium carbonates, BO33-, BO2(OH)2- and B(OH)4- anions substituted for carbonate groups, as well as those of B(OH)4- and B(OH)3 species in vacuum. Significant variability of equilibrium isotopic fractionation properties is observed among these structural species which is related to their contrasted coordination state, Bsbnd O bond lengths and atomic-scale environment. The isotopic composition of structural boron does not only depend on its coordination number but also on its medium range environment, i.e. farther than its first coordination shell. The isotopic fractionation between aqueous species and their counterparts in vacuum are assessed using previous investigations based on similar quantum-mechanical modeling approaches. At 300 K, the equilibrium isotope composition of structural trigonal species is 7-15‰ lighter than that of aqueous boric acid molecules, whereas substituted tetrahedral borate ions are heavier than their aqueous counterparts by 10-13‰. Although significant uncertainties are known to affect the theoretical prediction of fractionation factors between solids and solutions, the usually assumed lack of isotopic fractionation during borate incorporation in carbonates is challenged by these theoretical results. The present theoretical equilibrium fractionation factors between structural boron and aqueous species differ from those inferred from experiments which may indicate that isotopic equilibrium, unlike chemical equilibrium, was not reached in most experiments. Further research into the isotopic fractionation processes at the interface between calcium carbonates and aqueous solution as well as long duration experiments aimed at

  4. Electrochemical Properties of Boron-Doped Fullerene Derivatives for Lithium-Ion Battery Applications.

    Science.gov (United States)

    Sood, Parveen; Kim, Ki Chul; Jang, Seung Soon

    2018-03-19

    The high electron affinity of fullerene C 60 coupled with the rich chemistry of carbon makes it a promising material for cathode applications in lithium-ion batteries. Since boron has one electron less than carbon, the presence of boron on C 60 cages is expected to generate electron deficiency in C 60 , and thereby to enhance its electron affinity. By using density functional theory (DFT), we studied the redox potentials and electronic properties of C 60 and C 59 B. We have found that doping C 60 with one boron atom results in a substantial increase in redox potential from 2.462 V to 3.709 V, which was attributed to the formation of an open shell system. We also investigated the redox and electronic properties of C 59 B functionalized with various redox-active oxygen containing functional groups (OCFGs). For the combination of functionalization with OCFGs and boron doping, it is found that the enhancement of redox potential is reduced, which is mainly attributed to the open shell structure being changed to a closed-shell one. Nevertheless, the redox potentials are still higher than that of pristine C 60 . From the observation that the lowest unoccupied molecular orbital of closed-shell OCFG- functionalized C 59 B is correlated well with the redox potential, it was confirmed that the spin state is crucial to be considered to understand the relationship between electronic structure and redox properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Influence of some factors on kinetics of boron ions sorption by inorganic anion exchanger of MNG type

    International Nuclear Information System (INIS)

    Leont'eva, G.V.

    1991-01-01

    Consideration is given to the influence of particle size of anion exchanger and boron ion concentration on boron sorption from the solution of the following composition (kg/m 3 ): Na + -71.3; K + - 1.9; Ca 2+ - 43.8; Mg 2+ - 5.7; B 2 O 3 -0.32-1.50; Cl - - 204.6, SO 4 2- - 0.02, CO 3 2+ - 0.40; HCO 3 - - 1.74; pH=8.1; density - 1225 kg/m 3 . Increase of dispersivity of ion-exchange material promotes the elevation of sorption rate. Increase of boron ion concentration in the solution leads to exchange capacity growth and reduction of latent period of nucleation; this results to increase of sorption rate

  6. Boron oxide–tin oxide/graphene composite as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Wen, Lina; Qin, Xue; Meng, Wei; Cao, Ning; Song, Zhonghai

    2016-01-01

    Highlights: • B_2O_3–SnO_2/G anode material is prepared by chemical heat solvent method for LIBs. • B_2O_3–SnO_2/G shows much improved cycling performance and rate capability. • B_2O_3 plays an important role in improving the performance. - Abstract: B_2O_3–SnO_2/graphene (B_2O_3–SnO_2/G) composite is fabricated via a chemical heat solvent method and utilized as anode material for lithium ion batteries. The added B_2O_3 dramatically improves the electrochemical performance of lithium ion batteries compared to the SnO_2/G composite. The B_2O_3–SnO_2/G composites as anode show an outstanding discharge capacity of 1404.9 mAh g"−"1 at 500 mA g"−"1 after 200 cycles and an excellent rate capacity, which apparently outperforms the previously reported SnO_2-based anode material. These improved electrochemical performance characteristics are due to the B_2O_3 played a buffering role, which are easily beneficial for accommodating the volume change during the lithium ions insertion/extraction processes. Furthermore, boron atoms can accept electrons for its electron-deficient nature and boron ions could release electrons, which lead to electrons' increased density and conductivity are increased. The results indicate that the B_2O_3–SnO_2/G composite is a promising anode material for lithium ion batteries.

  7. Boron oxide–tin oxide/graphene composite as anode materials for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Lina [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Qin, Xue, E-mail: qinxue@tju.edu.cn [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry, Nankai University, Tianjin 300071 (China); Meng, Wei; Cao, Ning; Song, Zhonghai [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

    2016-11-15

    Highlights: • B{sub 2}O{sub 3}–SnO{sub 2}/G anode material is prepared by chemical heat solvent method for LIBs. • B{sub 2}O{sub 3}–SnO{sub 2}/G shows much improved cycling performance and rate capability. • B{sub 2}O{sub 3} plays an important role in improving the performance. - Abstract: B{sub 2}O{sub 3}–SnO{sub 2}/graphene (B{sub 2}O{sub 3}–SnO{sub 2}/G) composite is fabricated via a chemical heat solvent method and utilized as anode material for lithium ion batteries. The added B{sub 2}O{sub 3} dramatically improves the electrochemical performance of lithium ion batteries compared to the SnO{sub 2}/G composite. The B{sub 2}O{sub 3}–SnO{sub 2}/G composites as anode show an outstanding discharge capacity of 1404.9 mAh g{sup −1} at 500 mA g{sup −1} after 200 cycles and an excellent rate capacity, which apparently outperforms the previously reported SnO{sub 2}-based anode material. These improved electrochemical performance characteristics are due to the B{sub 2}O{sub 3} played a buffering role, which are easily beneficial for accommodating the volume change during the lithium ions insertion/extraction processes. Furthermore, boron atoms can accept electrons for its electron-deficient nature and boron ions could release electrons, which lead to electrons' increased density and conductivity are increased. The results indicate that the B{sub 2}O{sub 3}–SnO{sub 2}/G composite is a promising anode material for lithium ion batteries.

  8. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  9. Network type sp3 boron-based single-ion conducting polymer electrolytes for lithium ion batteries

    Science.gov (United States)

    Deng, Kuirong; Wang, Shuanjin; Ren, Shan; Han, Dongmei; Xiao, Min; Meng, Yuezhong

    2017-08-01

    Electrolytes play a vital role in modulating lithium ion battery performance. An outstanding electrolyte should possess both high ionic conductivity and unity lithium ion transference number. Here, we present a facile method to fabricate a network type sp3 boron-based single-ion conducting polymer electrolyte (SIPE) with high ionic conductivity and lithium ion transference number approaching unity. The SIPE was synthesized by coupling of lithium bis(allylmalonato)borate (LiBAMB) and pentaerythritol tetrakis(2-mercaptoacetate) (PETMP) via one-step photoinitiated in situ thiol-ene click reaction in plasticizers. Influence of kinds and content of plasticizers was investigated and the optimized electrolytes show both outstanding ionic conductivity (1.47 × 10-3 S cm-1 at 25 °C) and high lithium transference number of 0.89. This ionic conductivity is among the highest ionic conductivity exhibited by SIPEs reported to date. Its electrochemical stability window is up to 5.2 V. More importantly, Li/LiFePO4 cells with the prepared single-ion conducting electrolytes as the electrolyte as well as the separator display highly reversible capacity and excellent rate capacity under room temperature. It also demonstrates excellent long-term stability and reliability as it maintains capacity of 124 mA h g-1 at 1 C rate even after 500 cycles without obvious decay.

  10. Influence of lithium and boron ions on calcium sulfo-aluminate cement hydration: application for the conditioning of boron ion exchange resins

    International Nuclear Information System (INIS)

    Dhoury, Melanie

    2015-01-01

    In pressurized water reactors, a solution of boric acid, the pH of which is controlled by the addition of lithium hydroxide, is injected in the primary circuit. Boron acts as a neutron moderator and helps controlling the fission reactions. The primary coolant is purified by flowing through columns of ion exchange resins. These resins are periodically renewed and constitute a low-level radioactive waste. In addition to radionuclides, they mainly contain borate and lithium ions. They are currently encapsulated in an organic matrix before being stored in a near-surface repository. An evolution of the process is considered, involving the replacement of the organic matrix by a mineral one. In this PhD study, the potential of calcium sulfo-aluminate cements (CSAC) to solidify/stabilize borated resins in the presence of lithium is investigated. These binders have the advantage to form hydrates which can incorporate borate ions in their structure, and their hydration is less retarded than that of Portland cement.An analytical approach is adopted, based on a progressive increase in the complexity of the investigated systems. Hydration of ye-elimite-rich CSAC is thus successively investigated in the presence of (i) lithium salts, (ii) lithium hydroxide and sodium borate, and (iii) lithium hydroxide and borated ion exchange resins. The experimental investigation is supplemented by thermodynamic modelling using a database specially developed for the needs of the study. Lithium ions are shown to accelerate CSAC hydration by decreasing the duration of the period of low thermal activity. The postulated mechanism involves the precipitation of lithium-containing aluminum hydroxide. On the contrary, sodium borate retards CSAC hydration by increasing the duration of the period of low thermal activity. Ulexite, a poorly crystallized mineral containing sodium and borates, transiently precipitates at early age. As long as ulexite is present, dissolution of ye-elimite is strongly slowed

  11. Structure and reactivity of boron-ate complexes derived from primary and secondary boronic esters.

    Science.gov (United States)

    Feeney, Kathryn; Berionni, Guillaume; Mayr, Herbert; Aggarwal, Varinder K

    2015-06-05

    Boron-ate complexes derived from primary and secondary boronic esters and aryllithiums have been isolated, and the kinetics of their reactions with carbenium ions studied. The second-order rate constants have been used to derive nucleophilicity parameters for the boron-ate complexes, revealing that nucleophilicity increased with (i) electron-donating aromatics on boron, (ii) neopentyl glycol over pinacol boronic esters, and (iii) 12-crown-4 ether.

  12. Separation of boron isotopes by ion exchange chromatography: studies with Duolite-162, a type-II resin

    International Nuclear Information System (INIS)

    Sharma, B.K.; Subramanian, R.; Balasubramanian, R.; Mathur, P.K.

    1994-01-01

    The selection of resin plays an important role in the process of separation of boron isotopes by ion exchange chromatography. The determination of (i) ion exchange capacity of Duolite-162 resin for hydroxyl - chloride exchange, (ii) hydroxyl - borate exchange, (iii) isotopic exchange separation factor by batch method and (iv) effect of concentration of boric acid on isotopic exchange separation factor to test the suitability of the above resin for this process are discussed in this report. (author)

  13. Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

    Science.gov (United States)

    Lu, Xin-Ming

    Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

  14. Use of water as displacing agent in ion exchange chromatographic separation of isotope of boron using weak base ion exchange resin

    International Nuclear Information System (INIS)

    Sharma, B.K.; Mohanakrishnan, G.; Anand Babu, C.; Krishna Prabhu, R.

    2008-01-01

    Experiments were undertaken to study the feasibility of using weakly basic anion exchange resin for enrichment of isotopes of boron by ion exchange chromatography and water as eluent. The results of experiments carried out to determine total chloride capacity (TCC), strong base capacity (SBC) of the resin at different concentrations of boric acid and enrichment profiles are reported in this paper. (author)

  15. Structure-phase composition and nano hardness of chrome-fullerite-chrome films irradiated by boron ions

    International Nuclear Information System (INIS)

    Baran, L.V.

    2015-01-01

    By methods of atomic force microscopy, X-ray diffraction and nano indentation the research of change of structure phase composition and nano hardness of the chrome - fullerite - chrome films, subjected to implantation by B + ions (E = 80 keV, F = 5*10 17 ions/cm 2 ) are submitted. It is established, that as a result of Boron ion implantation of the chrome - fullerite - chrome films, chrome and fullerite inter fusion on sues, that is the solid-phase interaction and as a result of which forms the heterophase with increased nano hardness. (authors)

  16. H-isotope retention and thermal/ion-induced release in boronized films

    International Nuclear Information System (INIS)

    Walsh, D.S.; Doyle, B.L.; Wampler, W.R.; Hays, A.K.

    1990-01-01

    Over the past decade, it has been clearly demonstrated that the composition of the very near surface (∼100nm) of plasma-interactive components plays a determinant role in most processes which occur in the plasma-edge of Tokamaks. Two very successful techniques to effect control of the plasma-wall interaction are (1) in-situ deposition of amorphous carbon or boron-carbon films and (2) the use of He/C conditioning discharges or He glow discharge cleaning to modify the near surface of bulk graphite components. We have deposited boronized layers into Si using plasma-assisted CVD and sputter deposition. The PCVD deposition conditions were as close as possible to those used in TFTR, and some films deposited in TFTR have also been studied. Using these two deposition techniques, B x CH y films have been produced with x varying from 1/2 -- 4, and y from ∼1 (sputtered) to ∼3 (PCVD). Most films also contained significant amounts of 0. Thermal and ion-induced release of H-isotopes from BC films is qualitatively similar to that measured for graphite. Implanted H saturates in these films at a H/host atom ratio of 0.7 which is considerably higher than that of graphite(∼0.4). As-deposited PCVD films are already saturated with H, while sputtered films are not. Sputtered BC films therefore possess an inherent H-pumping capability which could prove to be extremely beneficial to TFTR. 16 refs., 5 figs., 1 tab

  17. Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

    International Nuclear Information System (INIS)

    Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

    2007-01-01

    Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

  18. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  19. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  20. Effect of radiation induced defects and incompatibility elastic stresses on the diffusion of ion implantated boron in silicon at the pulse annealing

    International Nuclear Information System (INIS)

    Stel'makh, V.F.; Suprun-Belevich, Yu.R.; Chelyadinskij, A.R.

    1987-01-01

    For determination of radiation defects effect on diffusion of the implanted boron in silicon at the pulse annealing, silicon crystals, implanted with boron, preliminary irradiated by silicon ions of different flows for checked defects implantation, were investigated. Silicon crystals additionally implanted by Ge + ions were investigated to research the effect of the incompatibility elastic stresses, emerging in implanted structures due to lattice periods noncoincidence in matrix and alloyed layers, on implanted boron diffusion. It is shown, that abnormally high values of boron diffusion coefficients in silicon at the pulse annealing are explained by silicon interstitial atom participation in redistribution of diffusing boron atoms by two diffusion channels - interstitial and vacation - and by incompatibility elastic stresses effect on diffusion

  1. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  2. Quantitative evaluation of boron neutron capture therapy (BNCT) drugs for boron delivery and retention at subcellular scale resolution in human glioblastoma cells with imaging secondary ion mass spectrometry (SIMS)

    Science.gov (United States)

    Chandra, S.; Ahmad, T.; Barth, R. F.; Kabalka, G. W.

    2014-01-01

    Boron neutron capture therapy (BNCT) of cancer depends on the selective delivery of a sufficient number of boron-10 (10B) atoms to individual tumor cells. Cell killing results from the 10B (n, α)7Li neutron capture and fission reactions that occur if a sufficient number of 10B atoms are localized in the tumor cells. Intranuclear 10B localization enhances the efficiency of cell killing via damage to the DNA. The net cellular content of 10B atoms reflects both bound and free pools of boron in individual tumor cells. The assessment of these pools, delivered by a boron delivery agent, currently cannot be made at subcellular scale resolution by clinically applicable techniques such as PET and MRI. In this study, secondary ion mass spectrometry (SIMS) based imaging instrument, a CAMECA IMS 3f ion microscope, capable of 500 nm spatial resolution was employed. Cryogenically prepared cultured human T98G glioblastoma cells were evaluated for boron uptake and retention of two delivery agents. The first, L-p-boronophenylalanine (BPA), has been used clinically for BNCT of high grade gliomas, recurrent tumors of the head and neck region and melanomas. The second, a boron analogue of an unnatural amino acid, 1-amino-3-borono-cyclopentanecarboxylic acid (cis-ABCPC), has been studied in rodent glioma and melanoma models by quantification of boron in the nucleus and cytoplasm of individual tumor cells. The bound and free pools of boron were assessed by exposure of cells to boron-free nutrient medium. Both BPA and cis-ABCPC delivered almost 70% of the pool of boron in the free or loosely bound form to the nucleus and cytoplasm of human glioblastoma cells. This free pool of boron could be easily mobilized out of the cell and was in some sort of equilibrium with extracellular boron. In the case of BPA, the intracellular free pool of boron also was affected by the presence of phenylalanine in the nutrient medium. This suggests that it might be advantageous if patients were placed on a

  3. Tuning the Colors of the Dark Isomers of Photochromic Boron Compounds with Fluoride Ions: Four-State Color Switching.

    Science.gov (United States)

    Mellerup, Soren K; Rao, Ying-Li; Amarne, Hazem; Wang, Suning

    2016-09-02

    Combining a three-coordinated boron (BMes2) moiety with a four-coordinated photochromic organoboron unit leads to a series of new diboron compounds that undergo four-state reversible color switching in response to stimuli of light, heat, and fluoride ions. Thus, these hybrid diboron systems allow both convenient color tuning/switching of such photochromic systems, as well as visual fluoride sensing by color or fluorescent emission color change.

  4. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

    2015-01-01

    The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  5. Boron isotope separation by ion exchange chromatography using weakly basic anion exchange resin

    International Nuclear Information System (INIS)

    Sakuma, Yoichi; Aida, Masao; Okamoto, Makoto; Kakihana, Hidetake

    1980-01-01

    Isotopic plateau displacement chromatography, a useful method for isotope separation is presented. The boric acid band formed in a column of weakly basic anion exchange resin Diaion WA21 can be eluted with pure water. In order to obtain good accumulation of the isotope effect, a series of experiments with different migration length were carried out. The boron-10 enriched part of the boric acid absorbed band was always preceded by the isotopic plateau part, in which the atomic fraction of boron-10 was maintained at its original value. The atomic fraction of boron-10 at the end of the chromatogram increased with migration length, and in the case of 256-m migration, boron-10 was enriched from its original atomic fraction of 19.84 to 91.00%, the separation factor S being constant irrespective of migration length: S = 1.0100 +- 0.0005. (author)

  6. Separation of boron isotopes by ion exchange chromatography: studies on regeneration of strong base anion exchange resins

    International Nuclear Information System (INIS)

    Sharma, B.K.; Subramanian, R.; Mathur, P.K.

    1994-01-01

    The optimum conditions for the regeneration of strong base anion exchange resins of type-I and type-II were determined for cost-effective separation of isotopes of boron by ion exchange chromatography where the hydroxyl form of an anion exchange resin is equilibrated with boric acid solution containing mannitol as a complexing reagent. The possibility of using unspent alkali content of the effluent was also exploited. Removal of carbonate impurity from Rayon grade caustic lye (used as regenerant after dilution) and recycling of Ba(OH) 2 was studied to avoid waste disposal problems. (author)

  7. Kinetics of boron ions sorption from solution by inorganic anion exchanger of MNH type

    International Nuclear Information System (INIS)

    Leont'eva, G.V.

    1990-01-01

    By the method of restricted volume in case of boron excess in solution kinetics of boron sorption by inorganic anion-exchanger of the composition (Mg 0.55 Ni 0.45 )(OH) 2 has been studied. The sorption was carried out from solution containing Na + , K + , Ca 2+ , Mg 2+ , Cl - , SO 4 2- , CO 3 2- , HCO 3 at 283, 293, 303 and 313 K and pH 8.1, while the density of solution was 1225 kg/m 3 . The sorption mechanism was considered. It is shown that heterogeneity of the character of kinetic curves is caused by the change in the mechanism of limiting stages of the sorption

  8. Surface modification of the hard metal tungsten carbide-cobalt by boron ion implantation; Oberflaechenmodifikation des Hartmetalls Wolframkarbid-Kobalt durch Bor-Ionenimplantation

    Energy Technology Data Exchange (ETDEWEB)

    Mrotchek, I.

    2007-09-07

    In the present thesis ion beam implantation of boron is studied as method for the increasement of the hardness and for the improvement of the operational characteristics of cutting tools on the tungsten carbide-cobalt base. For the boron implantation with 40 keV energy and {approx}5.10{sup 17} ions/cm{sup 2} fluence following topics were shown: The incoerporation of boron leads to a deformation and remaining strain of the WC lattice, which possesses different stregth in the different directions of the elementary cell. The maximum of the deformation is reached at an implantation temperature of 450 C. The segregation of the new phases CoWB and Co{sub 3}W was detected at 900 C implantation temperature. At lower temperatures now new phases were found. The tribological characteristics of WC-Co are improved. Hereby the maxiaml effect was measured for implantation temperatures from 450 C to 700 C: Improvement of the microhardness by the factor 2..2.5, improvement of the wear resistance by the factor 4. The tribological effects extend to larger depths than the penetration depth of the boron implantation profile. The detected property improvements of the hard metal H3 show the possibility of a practical application of boron ion implantation in industry. The effects essential for a wer decreasement are a hardening of the carbide phase by deformation of the lattice, a hardening of the cobalt binding material and the phase boundaries because of the formation of a solid solution of the implanted boron atoms in Co and by this a blocking of the dislocation movement and the rupture spreading under load.

  9. Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

    International Nuclear Information System (INIS)

    Lukichev, V.; Rudenko, K.; Orlikovsky, A.; Pustovit, A.; Vyatkin, A.

    2008-01-01

    We have investigated plasma immersion ion implantation (PI 3 ) of boron with energies of 500 eV (doses up to 2x10 15 cm -2 ) from BF 3 plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10 16 cm -2 ). Implanted samples were subjected to RTA (T = 900 to 1050 deg. C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5x10 19 cm -3 ) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.

  10. Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

    International Nuclear Information System (INIS)

    Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

    1999-01-01

    Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

  11. Mechanical and structural properties of fluorine-ion-implanted boron suboxide

    CSIR Research Space (South Africa)

    Machaka, R

    2011-09-01

    Full Text Available such as diffusion, solubility, deposi- tion, and alloy formation by providing high kinetic energy through ion impact and utilizing ballistic effects during ion- solid interaction [1?4]. Moreover, ion implantation allows the precise control of the ion energy, ion... annealing, and diffusion processes taking place during ion implantation. Advances in Materials Science and Engineering 3 Acc. V Det WD 5 ?m 512 kV 5000x CL 11.9 B6O Spot Magn (a) 0 1 2 3 4 5 6 7 8 0 0.3 0.6 0.9 1.3 1.6 KC n t Energy (keV) B...

  12. Development of high intensity ion sources for a Tandem-Electrostatic-Quadrupole facility for Accelerator-Based Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    Bergueiro, J.; Igarzabal, M.; Suarez Sandin, J.C.; Somacal, H.R.; Thatar Vento, V.; Huck, H.; Valda, A.A.; Repetto, M.

    2011-01-01

    Several ion sources have been developed and an ion source test stand has been mounted for the first stage of a Tandem-Electrostatic-Quadrupole facility For Accelerator-Based Boron Neutron Capture Therapy. A first source, designed, fabricated and tested is a dual chamber, filament driven and magnetically compressed volume plasma proton ion source. A 4 mA beam has been accelerated and transported into the suppressed Faraday cup. Extensive simulations of the sources have been performed using both 2D and 3D self-consistent codes.

  13. Development of high intensity ion sources for a Tandem-Electrostatic-Quadrupole facility for Accelerator-Based Boron Neutron Capture Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Bergueiro, J. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [CONICET, Buenos Aires (Argentina); Igarzabal, M.; Suarez Sandin, J.C. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina); Somacal, H.R. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [Escuela de Ciencia y Tecnologia, Universidad Nacional de San Martin (Argentina); Thatar Vento, V. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [CONICET, Buenos Aires (Argentina); Huck, H.; Valda, A.A. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)] [Escuela de Ciencia y Tecnologia, Universidad Nacional de San Martin (Argentina); Repetto, M. [Gerencia de Investigacion y Aplicaciones, Comision Nacional de Energia Atomica (Argentina)

    2011-12-15

    Several ion sources have been developed and an ion source test stand has been mounted for the first stage of a Tandem-Electrostatic-Quadrupole facility For Accelerator-Based Boron Neutron Capture Therapy. A first source, designed, fabricated and tested is a dual chamber, filament driven and magnetically compressed volume plasma proton ion source. A 4 mA beam has been accelerated and transported into the suppressed Faraday cup. Extensive simulations of the sources have been performed using both 2D and 3D self-consistent codes.

  14. Development of high intensity ion sources for a Tandem-Electrostatic-Quadrupole facility for Accelerator-Based Boron Neutron Capture Therapy.

    Science.gov (United States)

    Bergueiro, J; Igarzabal, M; Sandin, J C Suarez; Somacal, H R; Vento, V Thatar; Huck, H; Valda, A A; Repetto, M; Kreiner, A J

    2011-12-01

    Several ion sources have been developed and an ion source test stand has been mounted for the first stage of a Tandem-Electrostatic-Quadrupole facility For Accelerator-Based Boron Neutron Capture Therapy. A first source, designed, fabricated and tested is a dual chamber, filament driven and magnetically compressed volume plasma proton ion source. A 4 mA beam has been accelerated and transported into the suppressed Faraday cup. Extensive simulations of the sources have been performed using both 2D and 3D self-consistent codes. Copyright © 2011 Elsevier Ltd. All rights reserved.

  15. High-rate and ultralong cycle-life LiFePO_4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    International Nuclear Information System (INIS)

    Feng, Jinpeng; Wang, Youlan

    2016-01-01

    Highlights: • B-doped carbon decorated LiFePO_4 has been fabricated for the first time. • The LiFePO_4@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO_4@C. • The LiFePO_4@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO_4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO_4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO_4@B_0_._4-C can reach 164.1 mAh g"−"1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g"−"1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g"−"1 and can be maintained at 124.5 mAh g"−"1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO_4@B-C composite for high-performance lithium-ion batteries.

  16. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  17. Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide

    Directory of Open Access Journals (Sweden)

    Ronald Machaka

    2012-01-01

    degradation of near-surface mechanical properties with increasing fluorine fluence. Implications of these observations in the creation of amorphous near-surface layers by high-dose ion implantation are discussed in this paper.

  18. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  19. Boron ion beam production with the supernanogan ECR ion source for the CERN BIO-LEIR facility

    CERN Document Server

    Stafford-Haworth, J; Scrivens, R; Toivanen, V; Röhrich, J

    2014-01-01

    To deliver B3+ ions for medical research the compounds decaborane and m-carborane were tested using the metal ions from volatile compounds (MIVOC) method with the Supernanogan 14.5 GHz ECR ion source. Using decaborane the source delivered less than 10 A intensity of B3+ and after operation large deposits of material were found inside the source. Using m-carborane 50 A of B3+ were delivered without support gas. For m-carborane, helium and oxygen support gasses were also tested, and the effects of different source tuning parameters are discussed. The average consumption of m-carborane was 0:1 mg/Ah over all operation.

  20. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  1. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  2. The gettering of boron by an ion-implanted antimony layer in silicon

    International Nuclear Information System (INIS)

    Fair, R.B.; Pappas, P.N.

    1975-01-01

    Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb. These results emphasize the first-order importance of cooperative effects between donors and acceptors in diffusion profile calculations. (author)

  3. Collision strengths for the excitation of lithium- and boron-like ions by electron impact

    International Nuclear Information System (INIS)

    Goett, S.J.

    1983-01-01

    The theory of collision strengths of highly charged ions is presented in terms of the R-matrix formalism by utilizing time-dependent perturbation theory. This theory is then applied to the general case of an ion with three valence electrons. The theory is general enough to admit the possiblity of three equivalent electrons. The effects of configuration interaction and intermediate coupling are incorporated through the mixing coefficients calculated by diagonalizing the perturbation matrix. This matrix is formed by taking into account the electron-electron electrostatic interaction as well as all first order relativistic corrections. The dipole radiative line strengths are also calculated using these mix coefficients. The line strengths are needed for the Coulomb-Bethe approximation which estimates the contributions to the collision strengths from large values of the impact electron's orbital angular momentum. All the above quantities are calculated in both the LS and jj coupling schemes. This dual calculation provides useful information about the mixing of the states present, as well as serving as a valuable check on the development of the theory and the coding of the computer programs. An application is made to the calculation of transition energies, line strengths and collision strengths of transitions from all lower states with a configuration of 1s 2 2I to all upper states with a configuraiton of 1s2I/sub a/'2I/sub b/'

  4. X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

    2004-01-01

    Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

  5. Anodic carbon-boron bond cleavage through the intermediacy of electrogenerated bromonium ion

    International Nuclear Information System (INIS)

    Shi Deqing; Gitkis, Anna; Becker, James Y.

    2007-01-01

    The electrochemical properties of a series of cyclic arylboronic esters, XC 6 H 4 B(OR) 2 [RR = CH 2 CH 2 ; X = H (1a); p-Me (1b); p-OMe (1c); p-Cl (1d); p-Ph (1e); m-Cl (1f); m-OMe (1g); CF 3 (1h); OMe (1i); 2,6-dimethyl (1j); 1b with RR = (CH 2 ) 3 , (1k); 1b with RR = CMe 2 CMe 2 , (1m)] has been studied in acetonitrile by cyclic voltammetry (CV) and controlled-potential electrolysis (CPE). The CV of representative examples of aryl borates with different substituents show one irreversible oxidation wave on a Pt cathode, at 1.8-1.9 V (vs. Ag/AgCl), with a negligible substituent effect. The cathodic CPE process led to small amounts of biaryls only, whereas the direct anodic CPE could not be carried out practically due to low currents. However, in the presence of electrogenerated bromonium (or iodonium) ions a C-B bond cleavage does take place to yield the corresponding bromoaryls, brominated phenols, and arylboronic acids as the major products

  6. Anodic carbon-boron bond cleavage through the intermediacy of electrogenerated bromonium ion

    Energy Technology Data Exchange (ETDEWEB)

    Shi Deqing; Gitkis, Anna [Department of Chemistry, Ben-Gurion University of the Negev, Beer Sheva 84105 (Israel); Becker, James Y. [Department of Chemistry, Ben-Gurion University of the Negev, Beer Sheva 84105 (Israel)], E-mail: becker@bgu.ac.il

    2007-12-31

    The electrochemical properties of a series of cyclic arylboronic esters, XC{sub 6}H{sub 4}B(OR){sub 2} [RR = CH{sub 2}CH{sub 2}; X = H (1a); p-Me (1b); p-OMe (1c); p-Cl (1d); p-Ph (1e); m-Cl (1f); m-OMe (1g); CF{sub 3} (1h); OMe (1i); 2,6-dimethyl (1j); 1b with RR = (CH{sub 2}){sub 3}, (1k); 1b with RR = CMe{sub 2}CMe{sub 2}, (1m)] has been studied in acetonitrile by cyclic voltammetry (CV) and controlled-potential electrolysis (CPE). The CV of representative examples of aryl borates with different substituents show one irreversible oxidation wave on a Pt cathode, at 1.8-1.9 V (vs. Ag/AgCl), with a negligible substituent effect. The cathodic CPE process led to small amounts of biaryls only, whereas the direct anodic CPE could not be carried out practically due to low currents. However, in the presence of electrogenerated bromonium (or iodonium) ions a C-B bond cleavage does take place to yield the corresponding bromoaryls, brominated phenols, and arylboronic acids as the major products.

  7. Boron-Doped Carbon Nano-/Microballs from Orthoboric Acid-Starch: Preparation, Characterization, and Lithium Ion Storage Properties

    Directory of Open Access Journals (Sweden)

    Xinhua Lu

    2018-01-01

    Full Text Available A boron-doped carbon nano-/microballs (BC was successfully obtained via a two-step procedure including hydrothermal reaction (180°C and carbonization (800°C with cheap starch and H3BO3 as the carbon and boron source. As a new kind of boron-doped carbon, BC contained 2.03 at% B-content and presented the morphology as almost perfect nano-/microballs with different sizes ranging from 500 nm to 5 μm. Besides that, due to the electron deficient boron, BC was explored as anode material and presented good lithium storage performance. At a current density of 0.2 C, the first reversible specific discharge capacity of BC electrode reached as high as 964.2 mAh g–1 and kept at 699 mAh g–1 till the 11th cycle. BC also exhibited good cycle ability with a specific capacity of 356 mAh g–1 after 79 cycles at a current density of 0.5 C. This work proved to be an effective approach for boron-doped carbon nanostructures which has potential usage for lithium storage material.

  8. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  9. Enrichment of boron 10

    International Nuclear Information System (INIS)

    Coutinho, C.M.M.; Rodrigues Filho, J.S.R.; Umeda, K.; Echternacht, M.V.

    1990-01-01

    A isotopic separation pilot plant with five ion exchange columns interconnected in series were designed and built in the IEN. The columns are charged with a strong anionic resin in its alkaline form. The boric acid solution is introduced in the separation columns until it reaches a absorbing zone length which is sufficient to obtain the desired boron-10 isotopic concentration. The boric acid absorbing zone movement is provided by the injection of a diluted hydrochloric acid solution, which replace the boric acid throughout the columns. The absorbing zone equilibrium length is proportional to its total length. The enriched boron-10 and the depleted boron are located in the final boundary and in the initial position of the absorbing zones, respectively. (author)

  10. Beneficial effect of boron in layered sodium-ion cathode materials - The example of Na2/3B0.11Mn0.89O2

    Science.gov (United States)

    Vaalma, Christoph; Buchholz, Daniel; Passerini, Stefano

    2017-10-01

    Sodium-ion batteries are regarded as a complementary drop-in technology to lithium-ion batteries because they promise lower cost and a higher degree of environmental friendliness. Among other reasons, these benefits come from the use of manganese-based materials, whose stabilization via cation substitution is intensively studied to improve the electrochemical performance. Although multiple elements have been considered as substituent, surprisingly, boron has not been reported for layered sodium-ion cathode materials up to date. Our investigation of layered Na2/3B0.11Mn0.89O2 reveals an unexpectedly good electrochemical performance, with charge and discharge capacities of more than 175 mAh g-1 at 10 mA g-1 and 135 mAh g-1 at 500 mA g-1. The measured capacities are among the highest ever reported for sodium-based layered oxides in the potential range of 4.0-2.0 V vs. Na/Na+.

  11. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    Mohapatra, K.K.; Bose, Arun

    2014-01-01

    10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

  12. Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

    International Nuclear Information System (INIS)

    Villanueva-Rodriguez, M.; Hernandez-Ramirez, A.; Peralta-Hernandez, J.M.; Bandala, Erick R.; Quiroz-Alfaro, Marco A.

    2009-01-01

    This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe 2+ (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe 2+ concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe 2+ excess in the system.

  13. Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

    2008-12-05

    We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

  14. Electrochemical oxidation of acid black 210 dye on the boron-doped diamond electrode in the presence of phosphate ions: Effect of current density, pH, and chloride ions

    International Nuclear Information System (INIS)

    Costa, Carla Regina; Montilla, Francisco; Morallon, Emilia; Olivi, Paulo

    2009-01-01

    The electrochemical oxidation of acid black 210 dye (AB-210) on the boron-doped diamond (BDD) was investigated under different pH conditions. The best performance for the AB-210 oxidation occurred in alkaline phosphate solution. This is probably due to oxidizing agents such as phosphate radicals and peroxodiphosphate ions, which can be electrochemically produced with good yields on the BDD anode, mainly in alkaline solution. Under this condition, the COD (chemical oxygen demand) removal was higher than that obtained from the model proposed by Comninellis. Electrolyses performed in phosphate buffer and in the presence of chloride ions resulted in faster COD and color removals in acid and neutral solutions, but in alkaline phosphate solution, a better performance in terms of TOC removal was obtained in the absence of chloride. Moreover, organochloride compounds were detected in all electrolyses performed in the presence of chloride. The AB-210 electrooxidation on BDD using phosphate as supporting electrolyte proved to be interesting since oxidizing species generated from phosphate ions were able to completely degrade the dye without producing organochloride compounds.

  15. Different-ligand boron complexes with gluconate-ions and pentaerythritol and gluconatoborates with B-O-B bridge bond

    International Nuclear Information System (INIS)

    Tel'zhenskaya, P.N.; Shvarts, E.M.; Vitola, I.M.

    1990-01-01

    Borogluconates differing in structure of the complex dimeric borogluconate ion from the described earlier have been synthesized. The results of physicochemical measurements (chemical and thermal analysis, IR-spectroscopy, titration according to Fisher, conductometry) allowed to propose formulas for the studied compounds

  16. Internal stress control of boron thin film

    International Nuclear Information System (INIS)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  17. Internal stress control of boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  18. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Balapanova, B.S.; Zhajmina, R.E.; Serazetdinov, D.Z.

    1988-01-01

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  19. High-rate and ultralong cycle-life LiFePO{sub 4} nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jinpeng, E-mail: goldminer@sina.com; Wang, Youlan

    2016-12-30

    Highlights: • B-doped carbon decorated LiFePO{sub 4} has been fabricated for the first time. • The LiFePO{sub 4}@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO{sub 4}@C. • The LiFePO{sub 4}@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO{sub 4}. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO{sub 4} is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO{sub 4}@B{sub 0.4}-C can reach 164.1 mAh g{sup −1} at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g{sup −1}). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g{sup −1} and can be maintained at 124.5 mAh g{sup −1} after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO{sub 4}@B-C composite for high-performance lithium-ion batteries.

  20. Boron and chlorine isotopic signatures of seawater in the Central Indian Ridge

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Xiao, Y.K.; Hai, L.

    (CIR). Boron and chlorine isotopic measurements were made using positive thermal ionization mass spectrometry (TIMS) of Cs2BO4 + and Cs2Cl+ ions respectively, mainly to understand their isotopic behaviours to elucidate the consistency of boron...

  1. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  2. Aspects of the chemistry of boron

    International Nuclear Information System (INIS)

    Moellinger, H.

    1976-01-01

    Crystal phases of elementary boron are reviewed as well as boron-sulphur, boron-selenum, boron-tellurium, and boron-nitrogen compounds, carboranes, and boron-carbohydrate complexes. A boron cadastre of rivers and lakes serves to illustrate the role of boron in environmental protection. Technically relevant boron compounds and their uses are mentioned. (orig.) 891 HK/orig. 892 MB [de

  3. Boron and Nitrogen Codoped Carbon Layers of LiFePO4 Improve the High-Rate Electrochemical Performance for Lithium Ion Batteries.

    Science.gov (United States)

    Zhang, Jinli; Nie, Ning; Liu, Yuanyuan; Wang, Jiao; Yu, Feng; Gu, Junjie; Li, Wei

    2015-09-16

    An evolutionary composite of LiFePO4 with nitrogen and boron codoped carbon layers was prepared by processing hydrothermal-synthesized LiFePO4. This novel codoping method is successfully applied to LiFePO4 for commercial use, and it achieved excellent electrochemical performance. The electrochemical performance can be improved through single nitrogen doping (LiFePO4/C-N) or boron doping (LiFePO4/C-B). When modifying the LiFePO4/C-B with nitrogen (to synthesis LiFePO4/C-B+N) the undesired nonconducting N-B configurations (190.1 and 397.9 eV) are generated. This decreases the electronic conductivity from 2.56×10(-2) to 1.30×10(-2) S cm(-1) resulting in weak electrochemical performance. Nevertheless, using the opposite order to decorate LiFePO4/C-N with boron (to obtain LiFePO4/C-N+B) not only eliminates the nonconducting N-B impurity, but also promotes the conductive C-N (398.3, 400.3, and 401.1 eV) and C-B (189.5 eV) configurations-this markedly improves the electronic conductivity to 1.36×10(-1) S cm(-1). Meanwhile the positive doping strategy leads to synergistic electrochemical activity distinctly compared with single N- or B-doped materials (even much better than their sum capacity at 20 C). Moreover, due to the electron and hole-type carriers donated by nitrogen and boron atoms, the N+B codoped carbon coating tremendously enhances the electrochemical property: at the rate of 20 C, the codoped sample can elevate the discharge capacity of LFP/C from 101.1 mAh g(-1) to 121.6 mAh g(-1), and the codoped product based on commercial LiFePO4/C shows a discharge capacity of 78.4 mAh g(-1) rather than 48.1 mAh g(-1). Nevertheless, the B+N codoped sample decreases the discharge capacity of LFP/C from 101.1 mAh g(-1) to 95.4 mAh g(-1), while the commercial LFP/C changes from 48.1 mAh g(-1) to 40.6 mAh g(-1).

  4. Depth resolved investigations of boron implanted silicon

    Science.gov (United States)

    Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

    2003-01-01

    We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

  5. Last Glacial to Holocene changes of deep and intermediate water carbonate ion concentrations in the Southern Ocean: constraints from foraminiferal Boron/Calcium ratios

    OpenAIRE

    Kersten, Franziska

    2013-01-01

    In this thesis, the first records of intermediate and deep water carbonate ion concentrations in the South Pacific were generated in order to study carbon cycle dynamics throughout the past 30,000 years. Benthic foraminiferal B/Ca, an indicator of past seawater carbonate ion saturation is the main paleoceanographic proxy that was used in this study. Down-core proxy studies carried out within the scope of this thesis were used to address currently unresolved questions about the origin, mechani...

  6. Separation of boron isotopes using NMG type anion exchange resin

    International Nuclear Information System (INIS)

    Itagaki, Takaharu; Kosuge, Masao; Fukuda, Junji; Fujii, Yasuhiko.

    1992-01-01

    Ion exchange separation of boron isotopes (B-10 and B-11) has been studied by using a special boron selective ion exchange resin; NMG (n-methyl glucamine)-type anion exchange resin. The resin has shown a large isotope separation coefficient of 1.02 at the experimental conditions of temperature, 80degC, and boric acid concentration, 0.2 M (mole/dm 3 ). Enriched B-10 (92%) was obtained after the migration of 1149 m by a recyclic operation of ion exchange columns in a merry-go-round method. (author)

  7. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    . The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron...

  8. Chemical erosion of sintered boron carbide due to H+ impact

    International Nuclear Information System (INIS)

    Davis, J.W.; Haasz, A.A.

    1990-06-01

    The production of hydrocarbons and boron hydrides due to H + bombardment of sintered B 4 C has been investigated as a function of sample temperature and incident ion energy. While hydrocarbon production was observed, the yields were approximately two orders of magnitude smaller than observed for graphite. There was no evidence to indicate the production of any volatile boron-containing compounds. (3 figs., 11 refs.)

  9. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  10. Self-assembled coordination nanoparticles from nucleotides and lanthanide ions with doped-boronic acid-fluorescein for detection of cyanide in the presence of Cu2+ in water.

    Science.gov (United States)

    Kulchat, Sirinan; Chaicham, Anusak; Ekgasit, Sanong; Tumcharern, Gamolwan; Tuntulani, Thawatchai; Tomapatanaget, Boosayarat

    2012-01-30

    The sensor molecule, F-oBOH, containing boronic acid-linked hydrazide and fluorescein moieties was synthesized. For anion sensing applications, F-oBOH was studied in aqueous media. Unfortunately, F-oBOH was found to be hydrolyzed in water. Therefore, a new strategy was developed to prevent the hydrolysis of F-oBOH by applying self-assembly coordination nanoparticles network (F-oBOH-AMP/Gd(3+) CNPs). Interestingly, the nanoparticles network displayed the enhancement of fluorescent signal after adding Cu(2+) following by CN(-). The network, therefore, possessed a high selectivity for detection of CN(-) compared to other competitive anions in the presence of Cu(2+). Cyanide ion could promote the Cu(2+) binding to F-oBOH incorporated in AMP/Gd(3+) CNPs to give the opened-ring form of spirolactam resulting in the fourfold of fluorescence enhancement compared to Cu(2+) complexation without CN(-). Additionally, the log K value of F-oBOH-AMP/Gd(3+) CNPs⊂Cu(2+) toward CN(-) was 3.97 and the detection limits obtained from naked-eye and spectrofluorometry detections were 20μM and 4.03μM, respectively. The proposed method was demonstrated to detect CN(-) in drinking water with high accuracy. Copyright © 2011 Elsevier B.V. All rights reserved.

  11. Pulverization of boron element and proportions of boron carbide in boron

    International Nuclear Information System (INIS)

    Lang, F.M.; Finck, C.

    1956-01-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

  12. Contributions to the chemistry of Boron, 112

    International Nuclear Information System (INIS)

    Goetze, R.; Noeth, H.

    1980-01-01

    Several methods were used to prepare a series of boron substituted 1, 3, 2-dithiaborols. The NMR data of this new class of compounds indicate in comparison to 1, 3, 2-dithiaborolanes, that the heterocycle can be looked at as a 6 π-electron system. A high degree of analogy in the mass spectrometric fragmentation of dithiaborolanes and dithiaborols exists, however, the parent ion of 2-methyl dithiaborol is more stable than that of the saturated analogon. (orig.)

  13. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tao; Luo, Ruiying [School of Science, Beihang University, Beijing 100083 (China); Yoon, Seong-Ho; Mochida, Isao [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2010-03-15

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g{sup -1} and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by ''molecular bridging'' between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper. (author)

  14. Anode performance of boron-doped graphites prepared from shot and sponge cokes

    Science.gov (United States)

    Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

    The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

  15. Separation and Analysis of Boron Isotope in High Plant by Thermal Ionization Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Qingcai Xu

    2015-01-01

    Full Text Available Knowledge of boron and its isotope in plants is useful to better understand the transposition and translocation of boron within plant, the geochemical behavior in the interface between soil and plant, and the biogeochemical cycle of boron. It is critical to develop a useful method to separate boron from the plant for the geochemical application of boron and its isotope. A method was developed for the extraction of boron in plant sample, whose isotope was determined by thermal ionization mass spectrometry. The results indicated that this method of dry ashing coupled with two-step ion-exchange chromatography is powerful for the separation of boron in plant sample with large amounts of organic matters completely. The ratios of boron isotope composition in those plant tissue samples ranged from -19.45‰ to +28.13‰ (total range: 47.58‰ with a mean value of 2.61±11.76‰ SD. The stem and root isotopic compositions were lower than those in flower and leaf. The molecular mechanism of boron isotope may be responsible for the observed variation of boron isotopic composition and are considered as a useful tool for the better understanding of boron cycling process in the environment and for the signature of living systems.

  16. Microhardness of boron, titanium, and nitrogen implanted steel

    International Nuclear Information System (INIS)

    Sowa, M.; Szyszko, W.; Sielanko, J.; Glusiec, L.

    1989-01-01

    Mechanically polished steel (1H18N9T) and (15GTM) samples are implanted with boron, titanium, and nitrogen ions, with dose ranging from 10 16 to 10 17 ions/cm 2 . The implantation energy varied from 100 to 250 keV. Implanted samples are heat-treated at 400 to 800 0 C in vacuum. The microhardness of implanted samples is measured by using a Hanneman tester with loads ranging from 2 to 40 g. The influence of annealing temperature on microhardness of the implanted layers is determined. The diffusion of boron from the implanted layers is also investigated by using the secondary ion mass spectrometer. The diffusion coefficients of boron in steel are determined. (author)

  17. Effect of Boronization on Ohmic Plasmas in NSTX

    International Nuclear Information System (INIS)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-01-01

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

  18. Variations in the microstructure of nickel-based alloy coatings with the metalloids boron and silicon as a function of deposition parameters in a dual beam ion system

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1986-01-01

    We have deposited coatings using a dual beam ion source system with two different targets as sputtering sources; (i) a predominantly amorphous Ni/sub 63.5/Cr/sub 12.3/Fe/sub 3.5/Si/sub 7.9/B/sub 12.8/ foil and (ii) a crystalline Ni/sub 55.3/Cr/sub 16.9/Si/sub 7.2/B/sub 21.6/ slab from a casting. Amorphous coatings were produced by the foil for all conditions studied. The coatings that were deposited from the slab target that were less than 400 nm in thickness which were deposited at rates from 8--50 nm/min appeared to be amorphous. The thicker (>400 nm) coatings and the extremely low deposition rate (2 nm/min) coatings produced by the slab comprised both partially polycrystalline and amorphous material. All of the coatings studied exhibited inferior wear and erosion resistance properties compared to iron-based amorphous metal coatings containing Ti, C, or N, which have been studied by other groups. However, the corrosion resistance to 4 N HCl is good, ranging from less than 0.01 to 0.22 mm/yr as a function of deposition rate, concurrent ion bombardment conditions, and coating thickness

  19. Shock Response of Boron Carbide

    National Research Council Canada - National Science Library

    Dandekar, D. P. (Dattatraya Purushottam)

    2001-01-01

    .... The present work was undertaken to determine tensile/spall strength of boron carbide under plane shock wave loading and to analyze all available shock compression data on boron carbide materials...

  20. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  1. On the mechanism of boron transfer through the cation-exchange membrane MK-40

    International Nuclear Information System (INIS)

    Pilipenko, A.T.; Varvaruk, L.A.; Grebenyuk, V.D.; Trachevskij, V.V.

    1985-01-01

    Proceses of boron electromigration in solutions with different pH values are investigated. It is shown, that boron transfer through ion-exchange membranes is determined by pH of solution. Phenomenon of boron transfer (existing in the solution in the form of boric acid) through cation-exchange membrane MK-40 has been detected and described for the first time. The process of boron (3) complexing with sulfate groups of the membrane by means of competing reversible substitution of hydroxoligands is the basis of the phenomenon

  2. Boronated liposome development and evaluation

    International Nuclear Information System (INIS)

    Hawthorne, M.F.

    1995-01-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

  3. Modeling of long-range migration of boron interstitials

    International Nuclear Information System (INIS)

    Velichko, O.I.; Burunova, O.N.

    2009-01-01

    A model of the interstitial migration of ion-implanted dopant in silicon during low-temperature thermal treatment has been formulated. It is supposed that the boron interstitials are created during ion implantation or at the initial stage of annealing. During thermal treatment a migration of these impurity interstitials to the surface and in the bulk of a semiconductor occurs. On this basis, a simulation of boron redistribution during thermal annealing for 35 minutes at a temperature of 800 0 C has been carried out. The calculated boron profile agrees well with the experimental data. A number of the parameters describing the interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 0.092 μm at a temperature of 800 0 C. To carry out modeling of ion-implanted boron redistribution, the analytical solutions of nonstationary diffusion equation for impurity interstitials have been obtained. The case of Dirichlet boundary conditions and the case of reflecting boundary on the surface of a semiconductor have been considered. (authors)

  4. Boron determination in U3O8

    International Nuclear Information System (INIS)

    Ogura, Nadia S.; Sarkis, Jorge E.S.; Rosa, Daniele S.; Ulrich, Joao C.

    2009-01-01

    There exist specifications of the concentration as far the limit of impurities in the used uranium compounds is concerned. Among those impurities the boron element is detached. that in the uranium compounds acts as neutron absorber in nuclear reactions. Therefore, the determination of this element in uranium compounds, it is fundamental for the quality and performance of the nuclear fuels. However, the determination of this element is many times prejudiced by the presence of the uranium. For solving this problem, it is performed a chemical separation of the uranium (matrix) out of the interest. The most used methods to accomplish that separation are the solvent extraction and the ion exchange. In this work, the boron concentration will be done through the ion exchange technique, using polypropylene columns and Dowex AG 50W - X8 100-200 mesh cation resin in chloricide medium 0.25 M. The boron concentration will be determined through high resolution inductive coupling plasma mass spectrometry (HRICP-MS)

  5. Thermoelectric properties of boron and boron phosphide CVD wafers

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

    1997-10-01

    Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

  6. Proposed physiologic functions of boron in plants pertinent to animal and human metabolism.

    Science.gov (United States)

    Blevins, D G; Lukaszewski, K M

    1994-01-01

    Boron has been recognized since 1923 as an essential micronutrient element for higher plants. Over the years, many roles for boron in plants have been proposed, including functions in sugar transport, cell wall synthesis and lignification, cell wall structure, carbohydrate metabolism, RNA metabolism, respiration, indole acetic acid metabolism, phenol metabolism and membrane transport. However, the mechanism of boron involvement in each case remains unclear. Recent work has focused on two major plant-cell components: cell walls and membranes. In both, boron could play a structural role by bridging hydroxyl groups. In membranes, it could also be involved in ion transport and redox reactions by stimulating enzymes like nicotinamide adenine dinucleotide and reduced (NADH) oxidase. There is a very narrow window between the levels of boron required by and toxic to plants. The mechanisms of boron toxicity are also unknown. In nitrogen-fixing leguminous plants, foliarly applied boron causes up to a 1000% increase in the concentration of allantoic acid in leaves. In vitro studies show that boron inhibits the manganese-dependent allantoate amidohydrolase, and foliar application of manganese prior to application of boron eliminates allantoic acid accumulation in leaves. Interaction between borate and divalent cations like manganese may alter metabolic pathways, which could explain why higher concentrations of boron can be toxic to plants. PMID:7889877

  7. {sup 1}H and {sup 10}B NMR and MRI investigation of boron- and gadolinium-boron compounds in boron neutron capture therapy

    Energy Technology Data Exchange (ETDEWEB)

    Bonora, M., E-mail: marco.bonora@unipv.it [Physics Department ' A. Volta' , University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [CNISM Unit (Italy); Corti, M.; Borsa, F. [Physics Department ' A. Volta' , University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [CNISM Unit (Italy); Bortolussi, S.; Protti, N.; Santoro, D.; Stella, S.; Altieri, S. [Nuclear and Theoretical Physics Department, University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [INFN Pavia (Italy); Zonta, C.; Clerici, A.M.; Cansolino, L.; Ferrari, C.; Dionigi, P. [Surgical Sciences Department, Experimental Surgery Laboratory, University of Pavia, Pavia (Italy); Porta, A.; Zanoni, G.; Vidari, G. [Organic Chemistry Department, University of Pavia, Via Taramelli 10, 27100 Pavia (Italy)

    2011-12-15

    {sup 10}B molecular compounds suitable for Boron Neutron Capture Therapy (BNCT) are tagged with a Gd(III) paramagnetic ion. The newly synthesized molecule, Gd-BPA, is investigated as contrast agent in Magnetic Resonance Imaging (MRI) with the final aim of mapping the boron distribution in tissues. Preliminary Nuclear Magnetic Resonance (NMR) measurements, which include {sup 1}H and {sup 10}B relaxometry in animal tissues, proton relaxivity of the paramagnetic Gd-BPA molecule in water and its absorption in tumoral living cells, are reported.

  8. Boron isotope fractionation in column chromatography with glucamine type fibers

    International Nuclear Information System (INIS)

    Sonoda, Akinari; Makita, Yoji; Hirotsu, Takahiro

    2008-01-01

    Glucamine type polymers have specific affinity toward boric acid and borate ion. Among them, Chelest Fiber GRY-L showed larger fractionation for boron isotopes than other polymers in our previous study. For this study, we used Chelest Fibers with different fiber lengths (1.0 mm, 0.5 mm, and 0.3 mm) as column packing materials to perform chromatographic separation of boron isotopes. The shorter fiber has larger packing density when packed into the column using a dry method. The 0.3-mm-long fiber has a larger backpressure than fibers of other lengths. Boron adsorption capacities were measured using the breakthrough operation. At this time, the 0.5-mm-long fiber showed the highest capacity. When we measured the isotope ratio profile for fibers of different length using column chromatography, 0.5-mm-long fibers displayed the highest boron isotope fractionation. The 0.5-mm-long fiber is promising as a packing material of column chromatography for boron isotope separation. We also changed operation methods. The lower eluent concentration and the slower flow rate are suitable for boron isotope separation. (author)

  9. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...

  10. Ion beam studies

    International Nuclear Information System (INIS)

    Freeman, J.H.; Chivers, D.J.; Gard, G.A.; Temple, W.

    1977-04-01

    A description of techniques for the production of intense beams of heavy ions is given. A table of recommended operational procedures for most elements is included. The ionisation of boron is considered in some detail because of its particular importance as a dopant for ion implantation. (author)

  11. Ion sources for medical accelerators

    Science.gov (United States)

    Barletta, W. A.; Chu, W. T.; Leung, K. N.

    1998-02-01

    Advanced injector systems for proton synchrotrons and accelerator-based boron neutron capture therapy systems are being developed at the Lawrence Berkeley National Laboratory. Multicusp ion sources, particularly those driven by radio frequency, have been tested for these applications. The use of a radio frequency induction discharge provides clean, reliable, and long-life source operation. It has been demonstrated that the multicusp ion source can provide good-quality positive hydrogen ion beams with a monatomic ion fraction higher than 90%. The extractable ion current densities from this type of source can meet the injector requirements for both proton synchrotron and accelerator-based boron neutron capture therapy projects.

  12. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  13. Fine-tuning the nucleophilic reactivities of boron ate complexes derived from aryl and heteroaryl boronic esters.

    Science.gov (United States)

    Berionni, Guillaume; Leonov, Artem I; Mayer, Peter; Ofial, Armin R; Mayr, Herbert

    2015-02-23

    Boron ate complexes derived from thienyl and furyl boronic esters and aryllithium compounds have been isolated and characterized by X-ray crystallography. Products and mechanisms of their reactions with carbenium and iminium ions have been analyzed. Kinetics of these reactions were monitored by UV/Vis spectroscopy, and the influence of the aryl substituents, the diol ligands (pinacol, ethylene glycol, neopentyl glycol, catechol), and the counterions on the nucleophilic reactivity of the boron ate complexes were examined. A Hammett correlation confirmed the polar nature of their reactions with benzhydrylium ions, and the correlation lg k(20 °C)=sN (E+N) was employed to determine the nucleophilicities of the boron ate complexes and to compare them with those of other borates and boronates. The neopentyl and ethylene glycol derivatives were found to be 10(4) times more reactive than the pinacol and catechol derivatives. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Boron toxicity causes multiple effects on Malus domestica pollen tube growth

    Directory of Open Access Journals (Sweden)

    Kefeng eFang

    2016-02-01

    Full Text Available Boron is an essential micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this stress is not known. This study aimed to evaluate the effect of boron stress on Malus domestica pollen tube growth and its possible regulatory pathway. Our results show that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron stress could decrease [Ca2+]c and induce the disappearance of the [Ca2+]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron stress. Immuno-localization and fluorescence labeling, together with Fourier-transform infrared analysis (FTIR, suggested that boron stress influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca2+]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

  15. Boron Toxicity Causes Multiple Effects on Malus domestica Pollen Tube Growth.

    Science.gov (United States)

    Fang, Kefeng; Zhang, Weiwei; Xing, Yu; Zhang, Qing; Yang, Liu; Cao, Qingqin; Qin, Ling

    2016-01-01

    Boron is an important micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this toxicity is not known. This study aimed to evaluate the effect of boron toxicity on Malus domestica pollen tube growth and its possible regulatory pathway. Our results showed that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron toxicity could decrease [Ca(2+)]c and induce the disappearance of the [Ca(2+)]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron toxicity. Immuno-localization and fluorescence labeling, together with fourier-transform infrared analysis, suggested that boron toxicity influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins, and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca(2+)]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

  16. A New Boron Analysis Method

    Energy Technology Data Exchange (ETDEWEB)

    Weitman, J; Daaverhoeg, N; Farvolden, S

    1970-07-01

    In connection with fast neutron (n, {alpha}) cross section measurements a novel boron analysis method has been developed. The boron concentration is inferred from the mass spectrometrically determined number of helium atoms produced in the thermal and epithermal B-10 (n, {alpha}) reaction. The relation between helium amount and boron concentration is given, including corrections for self shielding effects and background levels. Direct and diffusion losses of helium are calculated and losses due to gettering, adsorption and HF-ionization in the release stage are discussed. A series of boron determinations is described and the results are compared with those obtained by other methods, showing excellent agreement. The lower limit of boron concentration which can be measured varies with type of sample. In e.g. steel, concentrations below 10-5 % boron in samples of 0.1-1 gram may be determined.

  17. Boronate esters: Synthesis, characterization and molecular base receptor analysis

    Science.gov (United States)

    Gómez-Jaimes, Gelen; Barba, Victor

    2014-10-01

    The synthesis of three boronate esters obtained by reacting 4-fluorophenylboronic (1), 4-iodophenylboronic (2) and 3,4-chlorophenylboronic (3) acids with 2,4,5-trihidroxybenzaldehyde is reported. The structural characterization was determined by spectroscopic and spectrometric techniques. The boron atom was evaluated to acts as Lewis acid center in the reaction with pyridine (Py), triethylamine (TEA) and fluoride anion (F-). The titration method was followed by UV-Vis and 11B NMR spectroscopy; results indicate the good interaction with the fluoride ion but poor coordination towards pyridine in solution.

  18. Tribological properties of nitrogen implanted and boron implanted steels

    International Nuclear Information System (INIS)

    Kern, K.T.

    1996-01-01

    Samples of a steel with high chrome content was implanted separately with 75 keV nitrogen ions and with 75 keV boron ions. Implanted doses of each ion species were 2-, 4-, and 8 x 10 17 /cm 2 . Retained doses were measured using resonant non-Rutherford Backscattering Spectrometry. Tribological properties were determined using a pin-on-disk test with a 6-mm diameter ruby pin with a velocity of 0.94 m/min. Testing was done at 10% humidity with a load of 377 g. Wear rate and coefficient of friction were determined from these tests. While reduction in the wear rate for nitrogen implanted materials was observed, greater reduction (more than an order of magnitude) was observed for boron implanted materials. In addition, reduction in the coefficient of friction for high-dose boron implanted materials was observed. Nano-indentation revealed a hardened layer near the surface of the material. Results from grazing incidence x-ray diffraction suggest the formation of Fe 2 N and Fe 3 N in the nitrogen implanted materials and Fe 3 B in the boron implanted materials. Results from transmission electron microscopy will be presented

  19. A density functional theory study of new boron nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhao-Hua [Shijiazhuang Institute of Technology, Shijiazhuang (China); Xie, Zun [Hebei Normal Univ., Shijiazhuang (China). College of Physics Science and Information Engineering and Hebei Advanced Thin Films Lab.

    2017-07-01

    Using first-principles calculations, a series of new boron nanotubes (BNTs), which show various electronic properties, were theoretically predicted. Stable nanotubes with various chiral vectors and diameters can be formed by rolling up the boron sheet with relative stability [H. Tang and S. I. Beigi, Phys. Rev. B 82, 115412 (2010).]. By increasing the diameter for BNT, the stability is enhanced. The calculated density of states and band structures demonstrate that all the predicted BNTs are metallic, regardless of their diameter and chirality. The multicentre chemical bonds of the relatively stable boron sheet and BNTs are analysed using the deformation electron density. Within our study, the BNTs all have metallic conductive characteristics, in addition to having a low effective quality and high carrier concentration, which are very good nanoconductive material properties and could be combined to form high-power electrodes for lithium-ion batteries such as those used in many modern electronics.

  20. Boron supplementation in broiler diets

    Directory of Open Access Journals (Sweden)

    EJ Fassani

    2004-12-01

    Full Text Available Boron supplementation in broiler feed is not a routine practice. However, some reports suggest a positive effect of boron on performance. This study assessed the effects of boron supplementation on broiler performance. Diets were based on maize and soybean meal, using boric acid P.A. as boron source. Six supplementation levels (0, 30, 60, 90, 120 and 150 ppm were evaluated using 1,440 one-day old males housed at a density of 30 chickens in each of 48 experimental plots of 3m². A completely randomized block design was used with 8 replicates. Feed intake, weight gain and feed conversion were assessed in the periods from 1 to 7 days, 1 to 21 days and 1 to 42 days of age, and viability was evaluated for the total 42-day rearing period. No performance variable was affected by boron supplementation (p>0.05 in the period from 1 to 7 days. The regression analysis indicated an ideal level of 37.4 ppm of boron for weight gain from 1 to 21 days (p0.05, although feed intake was reduced linearly with increased boron levels (p0.05. Ash and calcium percentages in the tibias of broilers and viability in the total rearing period were not affected by boron supplementation (p>0.05.

  1. Spectrophotometric determination of boric acid in boron powder with curcumin

    International Nuclear Information System (INIS)

    Grotheer, E.W.

    1979-01-01

    A rapid and accurate method was needed to determine trace amounts of boric acid for quality control and specification testing of elemental boron. The reaction between boric acid and curcumin occurs at a measurable rate only when the curcumin molecule is protonated. Protonation takes place at the carbonyl groups in the presence of a strong acid and occurs completely and rapidly when sulfuric acid is added to a solution of curcumin in acetic acid. Spectrophotometric measurements were made. The extraction of boric acid from boron powder was found to be complete within 2h when either water or the diol solution was used. Whatman No. 40 cr 42 filter paper was used to obtain diol samples free of boron particles. The extraction efficiency of 2-ethyl-1,3-hexanediol was evaluated by adding 1 ml of 500 ppM aqueous boric acid and 1 drop of 10% NaOH to accurately weighed samples of boron powder. The water then was evaporated at room temperature and the samples were extracted with diol solution. The data obtained are included. The extraction efficiency also was evaluated by determining the boric acid content of boron which had been recovered from a previous extraction and boric acid determination. The determination of boric acid using curcumin is unaffected by the presence of other compounds, except for fluoride and nitrate ions. 2 tables

  2. Determination of boron spectrophotometry in thorium sulfate

    International Nuclear Information System (INIS)

    Federgrun, L.; Abrao, A.

    1976-01-01

    A procedure for the determination of microquantities of boron in nuclear grade thorium sulfate is described. The method is based on the extraction of BF - 4 ion associated to monomethylthionine (MMT) in 1,2 - dichloroethane. The extraction of the colored BF - 4 -MMT complex does not allow the presence of sulfuric and phosphoric acids; other anions interfere seriously. This fact makes the dissolution of the thorium sulfate impracticable, since it is insoluble in both acids. On the other hand, the quantitative separation of thorium is mandatory, to avoid the precipitation of ThF 4 . To overcome this difficulty, the thorium sulfate is dissolved using a strong cationic ion exchanger, Th 4+ being totally retained into the resin. Boron is then analysed in the effluent. The procedure allows the determination of 0.2 to 10.0 microgramas of B, with a maximum error of 10%. Thorium sulfate samples with contents of 0.2 to 2.0μg B/gTh have being analysed [pt

  3. Boron atom reactions

    International Nuclear Information System (INIS)

    Estes, R.; Tabacco, M.B.; Digiuseppe, T.G.; Davidovits, P.

    1982-01-01

    The reaction rates of atomic boron with various epoxides have been measured in a flow tube apparatus. The bimolecular rate constants, in units of cm 3 molecule -1 s -1 , are: 1,2-epoxypropane (8.6 x 10 -11 ), 1,2-epoxybutane (8.8 x 10 -11 ), 1,2,3,4-diepoxybutane (5.5 x 10 -11 ), 1-chloro-2,3-epoxypropane (5.7 x 10 -11 ), and 1,2-epoxy-3,3,3-trichloropropane (1.5 x 10 -11 ). (orig.)

  4. Determination of boron in borosilicate glasses by neutron capture prompt gamma-ray activation analysis

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Jr, J E; Lindstrom, R M

    1987-01-01

    Major levels of boron in borosilicate glasses were determined nondestructively by neutron activation analysis. The effects of neutron self-shielding by boron (1 to 8% by weight) are examined. Results of the analysis of a series of glasses with increasing boron composition are 1.150 +- .005% and 7.766 +- .035% for the low and high members of the series. Once analyzed, the glasses are useful as secondary standards for alpha track counting, and also ion and electron microprobe analyses of glasses. 12 refs.; 3 tables.

  5. Indirect photometric detection of boron cluster anions electrophoretically separated in methanol.

    Science.gov (United States)

    Vítová, Lada; Fojt, Lukáš; Vespalec, Radim

    2014-04-18

    3,5-Dinitrobenzoate and picrate are light absorbing anions pertinent to indirect photometric detection of boron cluster anions in buffered methanolic background electrolytes (BGEs). Tris(hydroxymethyl)aminomethane and morpholine have been used as buffering bases, which eliminated baseline steps, and minimized the baseline noise. In methanolic BGEs, mobilities of boron cluster anions depend on both ionic constituents of the BGE buffer. This dependence can be explained by ion pair interaction of detected anions with BGE cations, which are not bonded into ion pairs with the BGE anions. The former ion pair interaction decreases sensitivity of the indirect photometric detection. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    International Nuclear Information System (INIS)

    Zhang, L.L.; Yang, Q.; Tang, Y.; Yang, L.; Zhang, C.; Hu, Y.; Cui, X.

    2015-01-01

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B 4 C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B 4 C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp 3 bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp 3 bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp 3 bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films

  7. Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

    NARCIS (Netherlands)

    Vos, M.; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

    1986-01-01

    Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from

  8. Determination of Boron in soils and plants samples using spectrophotometric method

    International Nuclear Information System (INIS)

    Stas, J.; Hariri, Z.

    2011-10-01

    In this work, the concentration of boron in soil and plant samples was determined with UV-vis spectrophotometer by using azomethine-H as a complex reagent. The calibration curve for boron determination in the range of (0μ3 g.mL - 1) was constructed by plotting the measured absorption of the yellow azomethine-H-B complex at λmax = 412.6 nm against boron concentration in the aqueous phase. The detection limit, repeatability limit, intermediate precision, accuracy, and recovery coefficient of this method were calculated and found to be 0.021 μg.mL - 1, 0.335% , 0.81%, 2.93%, (98.4-101.5)% respectively. The influence of some foreign ions on the determination of boron were also investigated in detail, most of the studied ions, like iron, iodide, and calcium can be tolerated within the ranges of (20-35μg.mL-1), (3000-5000μg.mL - 1) , (15000-30000μg.mL - 1) respectively. This is due to the fact, that ascorbic acid and EDTA in the buffer masking reagent reaction system can be very effective in masking these ions. This method was found to be economic and suitable for boron determination in standard and local samples (soil, plant) and requires small amount of sample (1g). This method can also be applied for boron determination in water samples (drinking and industrial waste water).(author)

  9. Separation process for boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Rockwood, S D

    1975-06-12

    The method according to the invention is characterized by the steps of preparing a gaseous mixture of BCl/sub 3/ containing the isotopes of boron and oxygen as the extractor, irradiating that mixture in the tube of the separator device by means of P- or R-lines of a CO/sub 2/ laser for exciting the molecules containing a given isotope of boron, simultaneously irradiating the mixture with UV for photodissociating the excited BCl/sub 3/ molecules and separating BCl/sub 3/ from the reaction products of photodissociation and from oxygen. Such method is suitable for preparing boron used in nuclear reactors.

  10. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    Vast, N.

    1999-01-01

    The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  11. Nothing Boring About Boron

    Science.gov (United States)

    Pizzorno, Lara

    2015-01-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body’s use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD+); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin’s lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron’s beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron—only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis

  12. Boronization in TEXTOR

    International Nuclear Information System (INIS)

    Winter, J.; Esser, H.G.; Koenen, L.; Reimer, H.; Seggern, J. v.; Schlueter, J.; Waelbroeck, F.; Wienhold, P.; Veprek, S.

    1989-01-01

    The liner and limiters of TEXTOR have been coated in situ with a boron containing carbon film using a RG discharge in a throughflow of 0.8 He + 0.1 B 2 H 6 + 0.1 CH 4 . The average film thickness was 30-50 nm, the ratio of boron and carbon in the layer was about 1:1 according to Auger Electron Spectroscopy. Subsequent tokamak discharges are characterized by a small fraction of radiated power ( eff lower than 1.2 are derived from conductivity measurements. The most prominent change in the impurity concentration compared to good conditions in a carbonized surrounding is measured for oxygen. The value OVI/anti n e of the OVI intensity normalized to the averaged plasma density anti n e decreases by more than a factor of four. The decrease in the oxygen content manifests itself also as a reduction of the CO and CO 2 partial pressures measured during and after the discharge with a sniffer probe. The carbon levels are reduced by a factor of about two as measured by the normalized intensity CII/anti n e of the CII line and via the ratio of the C fluxes and deuterium fluxed measured at the limiter (CI/D α ). The wall shows a pronounced sorption of hydrogen from the plasma, easing the density control and the establishment of low recycling conditions. The beneficial conditions did not show a significant deterioration during more than 200 discharges, including numerous shots at ICRH power levels >2 MW. (orig.)

  13. Note on boron toxicity in oats

    Energy Technology Data Exchange (ETDEWEB)

    Langille, W M; Mahoney, J F

    1959-01-01

    Boron was applied at the rate of 35 pounds per acre of borax to a field of oats. With the first noticeable growth there appeared a definite chlorotic condition of the oat seedlings on plots receiving boron treatments. Analysis of chlorotic tissue at 3 weeks after seeding indicated 110 ppm boron, while apparently healthy tissue contained 6.1 ppm boron at the same stage of growth. There was a rapid decline in the boron content of the oat tissue as the crop grew older. At maturity the oat tissue from the boron-treated plots contained an average of 14.15 ppm boron as compared with 4.10 boron from untreated areas. Boron toxicity had no harmful effect so far as yields were concerned, under the conditions of this experiment. 3 references.

  14. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  15. Metal interactions with boron clusters

    International Nuclear Information System (INIS)

    Grimes, R.N.

    1982-01-01

    This book presents information on the following topics: the structural and bonding features of metallaboranes and metallacarboranes; transition-metal derivatives of nido-boranes and some related species; interactions of metal groups with the octahydrotriborate (1-) anion, B 3 H 8 ; metallaboron cage compounds of the main group metals; closo-carborane-metal complexes containing metal-carbon and metal-boron omega-bonds; electrochemistry of metallaboron cage compounds; and boron clusters with transition metal-hydrogen bonds

  16. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  17. ICRF boronization. A new technique towards high efficiency wall coating for superconducting tokamak reactors

    International Nuclear Information System (INIS)

    Li Jiangang; Zhao Yan Ping; Gu Xue Mao

    1999-01-01

    A new technique for wall conditioning that will be especially useful for future larger superconducting tokamaks, such as ITER, has been successfully developed and encouraging results have been obtained. Solid carborane powder, which is non-toxic and non-explosive, was used. Pulsed RF plasma was produced by a non-Faraday shielding RF antenna with RF power of 10 kW. The ion temperature was about 2 keV with a toroidal magnetic field of 1.8 T and a pressure of 3x10 -1 Pa. Energetic ions broke up the carborane molecules, and the resulting boron ions struck and were deposited on the first wall. In comparison with glow discharge cleaning boronization, the B/C coating film shows higher adhesion, more uniformity and longer lifetime during plasma discharges. The plasma performance was improved after ICRF boronization. (author). Letter-to-the-editor

  18. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  19. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  20. Front and back side SIMS analysis of boron-doped delta-layer in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Pinault-Thaury, M.-A., E-mail: marie-amandine.pinault-thaury@uvsq.fr [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Jomard, F. [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)

    2017-07-15

    Highlights: • Front and back side SIMS analysis of delta-layer boron-doped is a first for diamond. • Combination of front and back side depth profiling improves delta-layer analyses. • Sharp interfaces are evidenced on both sides of the delta-layer boron-doped diamond. • The growth of delta-layer boron doped diamond is now well controlled. - Abstract: Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

  1. Ionic conductivity in BC3 type boron carbon nanolayers

    Directory of Open Access Journals (Sweden)

    Irina V. Zaporotskova

    2017-06-01

    Full Text Available Studies of ionic conductivity and structuresf in which it can be achieved are of great importance for the development of modern batteries. The use of new materials will allow avoiding such typical disadvantages of batteries as short service life, low capacity and leaks. In this article we present the results of our study of the ionic conductivity in boron carbon nanolayers. We have simulated three types of boron carbon nanolayers containing different amounts of boron. The studies have been carried out using the MNDO method within the framework of the molecular cluster model and the DFT method with the B3LYP functional and the 6–31G basis. To study the ion conduction process we have simulated vacancy formation for each type of the nanolayers and studied the energy and electronic characteristics of these processes. We show that 25% boron substitution is the most energetically favorable for vacancy formation. We have also simulated vacancy migration and determined the thermal conductivity as a function of temperature.

  2. Production of polyoxoboronate as novel boron compound

    International Nuclear Information System (INIS)

    Yanagie, Hironobu; Mitsui, Sayaka; Ogata, Aya

    2006-01-01

    Polyoxometalates are negatively charged inorganic substances which contain early transitional metal ions such as tungsten, molybdenum, making a cluster with the surrounding oxygen atoms. We prepared novel boron compound, (H 15 [V 12 10 B 32 O 84 Na 4 ]·13H 2 O; 10 B32), as the structure of polyoxometalates. With thermal neutron irradiation, 10 B32 shows cytotoxic effect on the proliferation of AsPC-1 cells in colony formation assay. On BNCT model mice bearing AsPC-1, 10 B32 shows tumor growth suppression, as well. These results indicate that 10 B32 has anti-tumor activity being functioned as a novel neutron capture agent. (author)

  3. Lattice vibrations in α-boron

    International Nuclear Information System (INIS)

    Richter, W.

    1976-01-01

    α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

  4. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  5. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    Jaraiz Franco, E.; Esteban Hernandez, J. A.

    1960-01-01

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe 2 B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  6. Chemical separation of boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF/sub 3/ gas and the liquid molecular addition compounds of BF/sub 3/. Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF/sub 3/ solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references.

  7. Chemical separation of boron isotopes

    International Nuclear Information System (INIS)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF 3 gas and the liquid molecular addition compounds of BF 3 . Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF 3 solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references

  8. Two-channel neutron boron meter

    International Nuclear Information System (INIS)

    Chen Yongqing; Yin Guowei; Chai Songshan; Deng Zhaoping; Zhou Bin

    1993-09-01

    The two-channel neutron boron meter is a continuous on-line measuring device to measure boron concentration of primary cooling liquid of reactors. The neutron-leakage-compensation method is taken in the measuring mechanism. In the primary measuring configuration, the mini-boron-water annulus and two-channel and central calibration loop are adopted. The calibration ring and constant-temperature of boron-water can be remotely controlled by secondary instruments. With the microcomputer data processing system the boron concentration is automatically measured and calibrated in on-line mode. The meter has many advantages such as high accuracy, fast response, multi-applications, high reliability and convenience

  9. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  10. Improved tribological behavior of boron implanted Ti-6Al-4V

    International Nuclear Information System (INIS)

    Baker, N.P.; Walter, K.C.; Nastasi, M.

    1998-03-01

    Boron implanted of Ti6Al4V has been conducted at combinations of 32 and 40 keV to supplement that done previously at 75 keV. Shallower boron depth profiles with higher B-concentrations in the Ti64 surface have been obtained by tailoring the combinations of ion energy and dose. This work used three different ion energy and dose combinations of 4 x 10 17 B-at/cm 2 at 40 keV plus 2 x 10 17 B-at/cm 2 at 32 keV, 4 x 10 17 B-at/cm 2 at 40 keV, and 4 x 10 17 B-at/cm 2 at 32 keV plus 2 x 10 17 B-at/cm 2 at 40 keV. Comparisons are made between Ti6Al4V with a shallow implanted boron depth profile, Ti6Al4V with a deeper boron depth profile and nitrogen implanted using a plasma source ion implantation process. It has been previously shown that while boron implanted Ti64 has a ∼ 30% higher surface hardness than nitrogen implanted Ti64, the N-implantation reduced the wear coefficient of Ti64 by 25--120x, while B-implantation reduced the wear coefficient by 6.5x or less. The results show that no significant improvement is made in the wear resistance of boron implanted Ti6Al4V by increasing the concentration of boron at the surface from approximately 10% to 43%. Transmission electron microscopy (TEM) and selected area diffraction (SAD) indicated the formation of crystalline TiB in the implanted surface layer. Shallower depth profiles result in reductions of the Ti6Al4V wear coefficient by 6.5x or less which is the same result obtained earlier with the deeper boron depth profile. Surface hardness of Ti6Al4V with shallower boron depth profiles was improved approximately 10% compared to the results previously acquired with deeper boron depth profiles

  11. A new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.; Park, C.; Yang, S.; Morris, S.; Do, V.; Tasch, F.

    1992-01-01

    We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This paper reports that this new model is based on the dual Pearson semi-empirical implant depth profile model and the UT-MARLOWE Monte Carlo boron ion implantation model. This new model can predict with very high computational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness

  12. A ditopic fluorescence sensor for saccharides and mercury based on a boronic-acid receptor and desulfurisation reaction.

    Science.gov (United States)

    Xing, Zhitao; Wang, Hui-Chen; Cheng, Yixiang; James, Tony D; Zhu, Chengjian

    2011-11-04

    Two boron-contained fluorescent sensors, 1 and 2, based on coumarin have been prepared. The fluorescence response of the two systems was investigated with addition of saccharide and mercury ions. Sensor 2 behaves as a bifunctional fluorescent switch with chemical inputs of D-fructose and mercury ions. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Contributions te the study of methods and factors affecting the spectrophotometric determination of boron traces with carmin uranium compounds

    International Nuclear Information System (INIS)

    Fernandez Cellini, R.; Gasco Sanchez, L.

    1956-01-01

    The study of some factors affecting the spectrophotometric determination of boron traces with carmin is made; the influence of carmin from different origin, the stability of complex carmin-boric acid in relation with the sulphuric acid concentration, the interference produced by ion nitrate, and the ion uraline and light influence are discussed. (Author) 36 refs

  14. Electronic structures in ion-surface interactions

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Takeuchi, Takae; Yamamoto, Masao.

    1997-01-01

    A chemical bond generated by the interaction between low energy ion and base was investigated by ab initio molecular orbital method. The effects of ion charge were studied by calculation of this method. When carbon ion approached to graphite base (C 24 H 12 ), the positive ion and the neutral atom covalently bonded, but the negative ion did not combine with it. When carbon ion was injected into h-BN base (B 12 N 12 H 12 , hexagonal system boron nitride), the positive ion and the neutron atom formed covalent bond and the van der Waals binding, and the negative ion interacted statically with it. (S.Y.)

  15. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

  16. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.

    1997-01-01

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  17. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    high temperature reaction between elemental boron and car- bon to form B4C is .... cible was used as the container for the electrolyte and also acted as an anode. ... chosen as cathode due to its availability, low cost, ease of fabrication and ...

  18. Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Davis, M.; Bendel, P.

    1988-01-01

    Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

  19. Boron removal efficiency from Red Sea water using different SWRO/BWRO membranes

    KAUST Repository

    Rahmawati, Karina; Ghaffour, NorEddine; Aubry, Cyril; Amy, Gary L.

    2012-01-01

    Seawater reverse osmosis (SWRO) desalination process provides high quality of fresh water. However, due to some operational constraints mainly scaling control some trace contaminant removal, such as acceptable boron concentration, cannot be achieved in a single pass SWRO system. The objective of this study was to investigate the efficiency of five difference reverse osmosis (RO) membranes (seawater SW and brackish water BW) provided by different manufacturers for boron removal. RO experiments using pretreated real Red Sea water were conducted in parallel to compare membrane performance under the same operating conditions. As expected, results showed that boron rejection increased as the feed pH increased. This was caused by dissociation of boric acid to negatively charged borate ions and more negatively charged membrane surface at elevated pH which enhanced boron rejection. Single pass RO system, with and without elevating the pH, may not be sufficient for two reasons. First, boron concentration in permeate does not fulfill local regulations (<0.5ppm). Second, severe scaling occurs due to operation in alkaline condition, since Ca 2+ and Mg 2+ concentrations are still high to cause salts precipitation. Techno-economical study was performed to select the best configuration and membrane giving the highest performance in terms of boron and TDS rejections and energy consumption. © 2012 Elsevier B.V.

  20. Detection of boron in metal alloys with solid state nuclear track detector by neutron induced autoradiography

    International Nuclear Information System (INIS)

    Ali Nabipour; Hosseini, A.; Afarideh, H.

    2002-01-01

    Neutron induced autoradiography is very useful technique for detection as well as measurement of Boron densities in metal alloys. The method is relatively simple and quite sensitive in comparison with other techniques with resolution in the range of PPM. Using this technique with it is also possible to investigate microscopic scattering of Boron in metal alloys. In comparison with most techniques neutron induced autoradiography has its own difficulties and limitations. In this research measurement of Boron densities and investigation of that diffusion in metal alloys has been carried out. A flat nicely polished Boron doped metal samples is covered with a track detecting plastic (CR-39 solid state nuclear track detector) and exposed to thermal neutron dose. After irradiation the plastic detector have been removed and put in an etching solution. Since the diffusion rate of corrosive solution in those area, which heavy ions have been, produces as the result of nuclear reaction with thermal neutron are more than the other areas, some cavities are formed. The diameter of cavities or tracks cross section are increased with increasing the etching time, to some extent that it is possible to observe the cavities with optical microscopes. The density of tracks on the detector surface is directly related to the Boron concentration in the sample and thermal neutron dose. So by measuring the number of tracks on surface of the detector it would possible to calculate the concentration of Boron in metal samples. (Author)

  1. Boron removal efficiency from Red Sea water using different SWRO/BWRO membranes

    KAUST Repository

    Rahmawati, Karina

    2012-12-01

    Seawater reverse osmosis (SWRO) desalination process provides high quality of fresh water. However, due to some operational constraints mainly scaling control some trace contaminant removal, such as acceptable boron concentration, cannot be achieved in a single pass SWRO system. The objective of this study was to investigate the efficiency of five difference reverse osmosis (RO) membranes (seawater SW and brackish water BW) provided by different manufacturers for boron removal. RO experiments using pretreated real Red Sea water were conducted in parallel to compare membrane performance under the same operating conditions. As expected, results showed that boron rejection increased as the feed pH increased. This was caused by dissociation of boric acid to negatively charged borate ions and more negatively charged membrane surface at elevated pH which enhanced boron rejection. Single pass RO system, with and without elevating the pH, may not be sufficient for two reasons. First, boron concentration in permeate does not fulfill local regulations (<0.5ppm). Second, severe scaling occurs due to operation in alkaline condition, since Ca 2+ and Mg 2+ concentrations are still high to cause salts precipitation. Techno-economical study was performed to select the best configuration and membrane giving the highest performance in terms of boron and TDS rejections and energy consumption. © 2012 Elsevier B.V.

  2. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  3. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Kumar, N.; Radhika, R.; Kozakov, A.T.; Pandian, R.; Chakravarty, S.; Ravindran, T.R.; Dash, S.; Tyagi, A.K.

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  4. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  5. Corrosion behaviour of layers obtained by nitrogen implantation into boron films deposited onto iron substrates

    International Nuclear Information System (INIS)

    Marchetti, F.; Fedrizzi, L.; Giacomozzi, F.; Guzman, L.; Borgese, A.

    1985-01-01

    The electrochemical behaviour and corrosion resistance of boron films deposited onto Armco iron after bombardment with 100 keV N + ions were determined in various test solutions. The changes in the electrochemical parameters give evidence of lower anodic dissolution rates for the treated samples. Scanning electron microscopy and Auger analysis of the corroded surfaces confirm the presence of protective layers. (Auth.)

  6. Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

    International Nuclear Information System (INIS)

    Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

    2014-01-01

    Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

  7. Mass-spectrometric study of boron derivatives of fluorinated β-diketones

    International Nuclear Information System (INIS)

    Lozinskij, M.O.; Fialkov, Yu.A.; Khomenko, V.S.; Rasshinina, T.A.

    1986-01-01

    A series of complexes of fluorinated β-diketones with boron difluoride is synthesized. Ways of their fragmentation and stability at electron collision are determined. Specific decay of perfluorinated and adamantane groups followed by formation of new β-diketonate ions of linear or cyclic structure is characteristic of the investigated complexes in a gas phase. Possibility of trapping of hydrogen atoms by β-diketonate ions in a gaseous phase is detected

  8. Different-ligand boron complexes with gluconate-ions and pentaerythritol and gluconatoborates with B-O-B bridge bond. Raznoligandnye kompleksy bora s glyukonat-ionami i pentaehritritom i glyukonatoboraty s mostikovoj V-O-V svyaz'yu

    Energy Technology Data Exchange (ETDEWEB)

    Tel' zhenskaya, P N; Shvarts, E M; Vitola, I M [AN Latvijskoj SSR, Riga (USSR). Inst. Neorganicheskoj Khimii

    1990-01-01

    Borogluconates differing in structure of the complex dimeric borogluconate ion from the described earlier have been synthesized. The results of physicochemical measurements (chemical and thermal analysis, IR-spectroscopy, titration according to Fisher, conductometry) allowed to propose formulas for the studied compounds.

  9. Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

    Science.gov (United States)

    Peterson, George Glenn

    Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

  10. Helium diffusion in irradiated boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.

    1981-03-01

    Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments

  11. Electrodeposited tungsten-nickel-boron: A replacement for hexavalent chromium

    International Nuclear Information System (INIS)

    Steffani, C.; Meltzer, M.

    1995-04-01

    Chromium, deposited from acidic solutions of its hexavalent ion, has been the rule for wear resistant, corrosion resistant coatings for many years. Although chromium coatings are durable, the plating process generates air emissions, effluent rinse waters, and process solutions that are toxic, suspected carcinogens, and a risk to human health and the environment. Tungsten-nickel-boron (W-Ni-B) alloy deposition is a potential substitute for hexavalent chrome. It has excellent wear, corrosion, and mechanical properties and also may be less of an environmental risk. This study examines the electroplating process and deposit properties of W-Ni-B and compares them with those of hexavalent chrome

  12. Electronic structure and photoelectron spectra of boron beta-diketonates

    International Nuclear Information System (INIS)

    Borisenko, A.V.; Vovna, V.I.

    1990-01-01

    Photoelectron spectra and data of semiempirical (MNDO, CNDO/2, CNDO/S, INDO) and nonempirical (with STO-3G basis) methods of calculation were obtained to analyse the electronic structure of boron-containing diketonate cycle and the influence of substitution effect (aromatic substituents in particular) on it. The sequence and the character of upper occupied MO were determined; the nature of bond of the fragment X 2 B + and AA was established; charges of six-membered ion and influence of substituents on their values were determined. 13 refs.; 5 figs.; 4 tabs

  13. Raman spectra of hot-pressed boron suboxide

    CSIR Research Space (South Africa)

    Machaka, R

    2011-01-01

    Full Text Available on in- situ/online measurements (such as GIXRD, Raman Spectroscopy, FIB- Electron Microscopy) during (i) ion implantation, (ii) PLD growth of nanoparticles SW/MW-CNTs, oxide semiconductor multi-layer, metal/Si and metal/metal systems. Moreover, He...], aluminium magnesium boride ? AlMgB14 [8], and the newly synthesized boron subnitride ? B13N2 [9, 10]. With hardness values reported between 24 GPa and 45 GPa [7, 11, 12], B6O is sometimes considered to be the third hardest material only after diamond...

  14. Primary system boron dilution analysis

    International Nuclear Information System (INIS)

    Crump, R.J.; Naretto, C.J.; Borgen, R.A.; Rockhold, H.C.

    1978-01-01

    The results are presented for an analysis conducted to determine the potential paths through which nonborated water or water with insufficient boron concentration might enter the LOFT primary coolant piping system or reactor vessel to cause dilution of the borated primary coolant water. No attempt was made in the course of this analysis to identify possible design modifications nor to suggest changes in administrative procedures or controls

  15. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  16. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Yilmaz, M. Tolga; Paluluoglu, Cihan

    2008-01-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm 2 , but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  17. Removal of boron (B) from waste liquors.

    Science.gov (United States)

    Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

    2006-01-01

    This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.

  18. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    Energy Technology Data Exchange (ETDEWEB)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H. [Institute of Physics, University of São Paulo, SP (Brazil)

    2014-11-11

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the {sup 10}B(p,αγ({sup 7}Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10{sup 16} at/cm{sup 2}.

  19. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    Science.gov (United States)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

    2014-11-01

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

  20. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    International Nuclear Information System (INIS)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

    2014-01-01

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the 10 B(p,αγ( 7 Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10 16 at/cm 2

  1. Investigations to increase the efficiency of fluorine and boron removal from groundwater using radiation-induced graft polymerization adsorbent

    International Nuclear Information System (INIS)

    Iyatomi, Yosuke; Shimada, Akiomi; Ogata, Nobuhisa; Sugihara, Kozo; Hoshina, Hiroyuki; Seko, Noriaki; Kasai, Noboru; Ueki, Yuji; Tamada, Masao

    2010-01-01

    The Japan Atomic Energy Agency is performing a research project in the Mizunami Underground Research Laboratory (MIU) to build a firm scientific and technological basis for the studies of the deep underground environment in crystalline rock. In the project, it is necessary to reduce the fluorine and boron concentrations in groundwater pumped from the MIU shafts to levels below the environmental standards. This is done at the MIU water treatment facility using coagulation and ion exchange treatment for fluorine and boron, respectively. In addition, in 2006, research started on the efficient treatment of groundwater for removal of fluorine and boron using a radiation-induced graft polymerization adsorbent. The adsorbent removed boron at a flow rate (space velocity (SV)=120 h -1 ) higher than that of a general ion exchange resin (SV=10 h -1 ) and the adsorbent could be used repeatedly. It was also apparent that the pH of groundwater had an influence on adsorption performance. With respect to fluorine removal, more than 90% of fluorine was removed. However, the adsorbent for fluorine showed a lower adsorption capacity than that for boron. The reason for this difference is considered to be related to the initial concentration difference between fluorine and boron in the groundwater. Therefore, it is necessary to define the initial concentrations of dissolved materials, which can be used as better indicators of the performance of the adsorbent. (author)

  2. A technique to prepare boronated B72.3 monoclonal antibody for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Ranadive, G.N.; Rosenzweig, H.S.; Epperly, M.W.

    1993-01-01

    B72.3 monoclonal antibody has been successfully boronated using mercaptoundecahydro-closo-dodecaborate (boron cage compound). The reagent was incorporated by first reacting the lysine residues of the antibody with m-maleimidobenzoyl succinimide ester (MBS), followed by Michael addition to the maleimido group by the mercapto boron cage compound to form a physiologically stable thioether linkage. Boron content of the antibody was determined by atomic absorption spectroscopy. For biodistribution studies, boronated antibody was radioiodinated with iodogen. 125 I-labeled and boronated B72.3 monoclonal antibody demonstrated clear tumor localization when administered via tail vein injections to athymic nude mice bearing LS174-T tumor xenografts. Boronated antibody was calculated to deliver 10 6 boron atoms per tumor cell. Although this falls short of the specific boron content originally proposed as necessary for boron neutron capture therapy (BNCT), recent calculations suggest that far fewer atoms of 10 B per tumor cell would be necessary to effect successful BNCT when the boron is targeted to the tumor cell membrane. (author)

  3. Molecular dynamic simulation on boron cluster implantation for shallow junction formation

    International Nuclear Information System (INIS)

    Yuan Li; Yu Min; Li Wei; Ji Huihui; Ren Liming; Zhan Kai; Huang Ru; Zhang Xing; Wang Yangyuan; Zhang Jinyu; Oka, Hideki

    2006-01-01

    Boron cluster ion implantation is a potential technology for shallow junction formation in integrated circuits manufacture. A molecular dynamic method for cluster implantation simulation, aiming at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters are described by the model, and the H atoms in clusters are included. A potential function taking the form of combining the ZBL and the SW potentials is presented here to model interaction among the atoms in the boron cluster. The impact of these models on cluster implantation simulation is investigated. There are notable impact on dopant distribution and amount of implantation defects with consideration of these models. The simulation on the distributions of B and H are verified by SIMS data

  4. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2004-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade boron carbide powder and pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Total Carbon by Combustion and Gravimetry 7-17 Total Boron by Titrimetry 18-28 Isotopic Composition by Mass Spectrometry 29-38 Chloride and Fluoride Separation by Pyrohydrolysis 39-45 Chloride by Constant-Current Coulometry 46-54 Fluoride by Ion-Selective Electrode 55-63 Water by Constant-Voltage Coulometry 64-72 Impurities by Spectrochemical Analysis 73-81 Soluble Boron by Titrimetry 82-95 Soluble Carbon by a Manometric Measurement 96-105 Metallic Impurities by a Direct Reader Spectrometric Method 106-114

  5. Application of ICPMS for performance evaluation of boron enrichment plant at HWP, Manuguru

    International Nuclear Information System (INIS)

    Murthy, P.K.; Mohapatra, C.; Vithal, G.K.

    2011-01-01

    10 B enriched compounds are used in neutron control rod in Fast Breeder Reactors (FBR), Neutron Detector, Neutron Capture Therapy, and Neutron Shielding. Heavy Water Board (HWB) is given a mandate to produce enriched elemental boron which is being produced using Ion exchange chromatography and BF 3 - ether complex distillation methods. Ion Exchange Chromatography based Boron Enrichment Plant is operating at HWP, Manuguru. Ion Exchange Chromatography based process depends, besides other process parameters, on column run time and movement of band length. For effective process and quality control, it is necessary to analyze 10 B/ 11 B ratio in feed, process stream, waste and the product. 10 B/ 11 B ratio measurements are possible by Thermal Ionization Mass Spectrometer (TIMS) and Inductively Coupled Plasma Mass Spectrometer (ICPMS), the former offers better accuracy but takes longer analysis time whereas the later offers quick analysis of isotopic ratios and as well as trace metal impurities in the Boric acid

  6. Scratch-resistant transparent boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Dekempeneer, E.H.A.; Kuypers, S.; Vercammen, K.; Meneve, J.; Smeets, J. [Vlaamse Instelling voor Technologisch Onderzoek (VITO), Mol (Belgium); Gibson, P.N.; Gissler, W. [Joint Research Centre of the Commission of the European Communities, Institute for Advanced Materials, Ispra (Vatican City State, Holy See) (Italy)

    1998-03-01

    Transparent boron nitride (BN) coatings were deposited on glass and Si substrates in a conventional capacitively coupled RF PACVD system starting from diborane (diluted in helium) and nitrogen. By varying the plasma conditions (bias voltage, ion current density), coatings were prepared with hardness values ranging from 2 to 12 GPa (measured with a nano-indenter). Infrared absorption measurements indicated that the BN was of the hexagonal type. A combination of glancing-angle X-ray diffraction measurements and simulations shows that the coatings consist of hexagonal-type BN crystallites with different degrees of disorder (nanocrystalline or turbostratic material). High-resolution transmission electron microscopy analysis revealed the presence of an amorphous interface layer and on top of this interface layer a well-developed fringe pattern characteristic for the basal planes in h-BN. Depending on the plasma process conditions, these fringe patterns showed different degrees of disorder as well as different orientational relationships with respect to the substrate surface. These observations were correlated with the mechanical properties of the films. (orig.) 14 refs.

  7. Advanced boron soaking procedure for steam generators

    International Nuclear Information System (INIS)

    Ueno, T.; Tsuge, A.; Kawanishi, K.; Ochi, T.; Kadokami, E.

    1991-01-01

    An experimental study on boric acid penetration into tube to tube-support-plate crevices and Inter-Granular-Attack (hereinafter called 'IGA') cracks in crevices has been performed to obtain the optimum boric acid soaking procedure in operating steam generators with IGA. The penetration rate into the crevice is closely related to various parameters such as heat flux, crevice gap, and porosity of the sludge deposited in crevices. Two experimental crevice models were set up. One was of the packed crevice type; crevice gap is completely packed by sludge, and the other was of the open crevice type; crevice gap is not packed, but reduced by sludge. The porosity of the crevice varied from 100% open porosity to the highly sludge packed porosity of 10∼20%. The relation between heat flux and boric acid penetration rate of the packed crevice type was investigated. For the open crevice type, from the viewpoint that boric acid penetration into the dryout region produces no effects, tube wall superheat in the crevice was measured in order to obtain the dryout heat flux. And it was investigated the boron in IGA cracks using Ion Micro Analysis in order to confirm existence of an anticorrosive film in IGA propagation. The optimum reactor power for effective boric acid penetration onto the tube surface and into the IGA cracks within the tube to tube-support-plate crevice was found to be about a 5% and 30% power level, which are applicable to both the packed and open crevice type. (author)

  8. Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

    Science.gov (United States)

    Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

    2015-04-01

    Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

  9. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  10. Study of extraction-spectrophotometric micro-determination of boron with methylene blue and its application

    International Nuclear Information System (INIS)

    Zhu Daohong

    1990-08-01

    A sensitive extraction-spectrophotometric method for microdetermination of boron with methylene blue was investigated. The method was based on the extraction of a BF 4 - -methylene blue complex into dichloroethane. Boron was determined directly by measuring the absorbance at 658 nm. The calibration graph was linear over the range of 2.5 x 10 -9 to 8 x 10 -8 g/mL. The blank, mechanism of the reactions, interference of other ions and some optimum conditions of the method were studied in detail. The main source of the blank resulted from methylene blue and the complex of F - -methylene blue. In order to reduce the blank, the amounts of methylene blue, H 2 SO 4 and HF were used as less as possible. Only one to one complex BF 4 - -methylene blue was formed in the medium of H 2 SO 4 . About 90% of methylene blue and F - -methylene blue complex was removre with 5 ml of water and only a little amount of BF 4 -methylene blue complex was decomposed. The extraction-spectrophotometric method with methylene blue was first applied to the microdetermination of boron in sodium metal and UF 6 . The sample of sodium metal was taken and weighed in the glovebox filled with argon. Then sodium metal was oxidized, hydrolyzed, netralized and fluorizated with H 2 O, H 2 SO 4 and HF, respectively. The 0.5 ppm of boron in sodium metal was determined with a relative error about ±4%. This method can be applied to the determination of boron in sodium metal, sodium sulfate and sodium hydroxide at diffeent grades. The species of boron in the hydrolysate of UF 6 is BF 4 - anion, so the sample can be directly analyzed. Boron contents in the range of 0.1 to 0.5 ppm was determined with a relative error about ±3%. Six samples could be analysed in 2h

  11. Application of drug delivery system to boron neutron capture therapy for cancer.

    Science.gov (United States)

    Yanagië, Hironobu; Ogata, Aya; Sugiyama, Hirotaka; Eriguchi, Masazumi; Takamoto, Shinichi; Takahashi, Hiroyuki

    2008-04-01

    Tumor cell destruction in boron neutron capture therapy (BNCT) is due to the nuclear reaction between (10)B and thermal neutrons ((10)B + (1)n --> (7)Li + (4)He (alpha) + 2.31 MeV (93.7 %)/2.79 MeV (6.3 %)). The resulting lithium ions and alphaparticles are high linear energy transfer (LET) particles which give a high biological effect. Their short range in tissue (5 - 9 mum) restricts radiation damage to those cells in which boron atoms are located at the time of neutron irradiation. BNCT has been applied clinically for the treatment of malignant brain tumors, malignant melanoma, head and neck cancer and hepatoma. Sodium mercaptoundecahydro-dodecaborate (Na(2)(10)B(12)H(11)SH: BSH) and borono-phenylalanine ((10)BPA) are currently being used in clinical treatments. These low molecule compounds are easily cleared from cancer cells and blood, so high accumulation and selective delivery of boron compounds into tumor tissues and cancer cells are most important to achieve effective BNCT and to avoid damage to adjacent healthy cells. In order to achieve the selective delivery of boron atoms to cancer cells, a drug delivery system (DDS) is an attractive intelligent technology for targeting and controlled release of drugs. We performed literature searches related to boron delivery systems in vitro and in vivo. We describe several DDS technologies for boron delivery to cancer tissues and cancer cells from the past to current status. We are convinced that it will be possible to use liposomes, monoclonal antibodies and WOW emulsions as boron delivery systems for BNCT clinically in accordance with the preparation of good commercial product (GCP) grade materials.

  12. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    Achatz, Philipp

    2009-01-01

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n c for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm -1 ) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g c . The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum

  13. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Paschoal, J.O.A.

    1988-01-01

    Boron carbide (B 4 C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B 4 C by carbothermic reduction of B 2 O 3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B 4 C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author) [pt

  14. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Fitzsimmons, M.; Pynn, R.

    1997-01-01

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  15. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  16. Boron rates for triticale and wheat crops

    Directory of Open Access Journals (Sweden)

    Corrêa Juliano Corulli

    2005-01-01

    Full Text Available No reports are registered on responses to boron fertilization nutrient deficiency and toxicity in triticale crops. The aim of this study was to evaluate triticale response to different rates of boron in comparison to wheat in an hapludox with initial boron level at 0.08 mg dm-3 4 4 factorial design trial completely randomized blocks design (n = 4. Boron rates were 0; 0.62; 1.24 and 1.86 mg dm-3; triticale cultivars were IAC 3, BR 4 and BR 53 and IAPAR 38 wheat crop was used for comparison. The wheat (IAPAR 38 crop presented the highest boron absorption level of all. Among triticale cultivars, the most responsive was IAC 53, presenting similar characteristics to wheat, followed by BR 4; these two crops are considered tolerant to higher boron rates in soil. Regarding to BR 53, no absorption effect was observed, and the cultivars was sensitive to boron toxicity. Absorption responses differed for each genotype. That makes it possible to choose and use the best-adapted plants to soils with different boron rates.

  17. Hot flow behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; El-Wahabi, M.; Cabrera, J.M.

    2008-01-01

    This research work studies the effect of boron contents on the hot flow behavior of boron microalloyed steels. For this purpose, uniaxial hot-compression tests were carried out in a low carbon steel microalloyed with four different amounts of boron over a wide range of temperatures (950, 1000, 1050 and 1100 deg. C) and constant true strain rates (10 -3 , 10 -2 and 10 -1 s -1 ). Experimental results revealed that both peak stress and peak strain tend to decrease as boron content increases, which indicates that boron additions have a solid solution softening effect. Likewise, the flow curves show a delaying effect on the kinetics of dynamic recrystallization (DRX) when increasing boron content. Deformed microstructures show a finer austenitic grain size in the steel with higher boron content (grain refinement effect). Results are discussed in terms of boron segregation towards austenitic grain boundaries during plastic deformation, which increases the movement of dislocations, enhances the grain boundary cohesion and modificates the grain boundary structure

  18. Elastic modulus and fracture of boron carbide

    International Nuclear Information System (INIS)

    Hollenberg, G.W.; Walther, G.

    1978-12-01

    The elastic modulus of hot-pressed boron carbide with 1 to 15% porosity was measured at room temperature. K/sub IC/ values were determined for the same porosity range at 500 0 C by the double torsion technique. The critical stress intensity factor of boron carbide with 8% porosity was evaluated from 25 to 1200 0 C

  19. Spectrophotometric determination of boron by solvent extraction with hydrobenzoin and crystal violet

    International Nuclear Information System (INIS)

    Sato, Shigeya; Uchikawa, Sumio

    1982-01-01

    A highly sensitive and simple method for the spectrophotometric determination of boron was developed. Boron was found to react with hydrobenzoin in weak alkaline medium to form a complex anion extractable into benzene with crystal violet, and the measurement of the absorbance of crystal violet in the extract at 600 nm enabled the determination of boron indirectly. The recommended procedure is as follows: Take an aliquot of the boron solution (2.0 x 10 - 4 mol l - 1 ) into a 10-ml test tube. Add 1 ml of carbonate buffer solution (pH 9.4) and 0.25 ml of crystal violet solution (1.0 x 10 - 2 mol l - 1 ), and dilute the mixed solution to 4 ml with deionized water. Shake the solution with 4 ml of benzene solution containing hydrobenzoin (2.0 x 10 - 2 mol l - 1 ) for 2 min. Measure the absorbance of the organic phase at 600 nm using a 10-mm glass cell against benzene. The calibration curve obeyed Beer's law on the concentration range from 2.5 x 10 - 6 mol l - 1 to 2.5 x 10 - 5 mol l - 1 of boron, and the apparent molar absorptivity was 3.0 x 10 4 l mol - 1 cm - 1 at 20 0 C. It was found that many kinds of co-existing ions interfered with the determination. However, this method was applicable to the determination of boron in sea water when chloride ion and cations such as Ca(II) and Mg(II) were previously eliminated by treating the sample solution with Ag 2 O and cation exchanger resin. The proposed method is a very simple and rapid one, because this method does not require apparatus other than common laboratories and the evaporation to dryness of sample or removal of the excess of reagent. (author)

  20. Mechanism of regional enrichment of groundwater by boron: the examples of Bangladesh and Michigan, USA

    International Nuclear Information System (INIS)

    Ravenscroft, P.; McArthur, J.M.

    2004-01-01

    In Bangladesh, concentrations of boron in groundwater reach 2.1 mg L -1 and are high regionally in alluvial aquifers of Late Pleistocene/Holocene age. Concentrations exceed 0.5 mg L -1 across approximately 6700 km 2 of the deep aquifer (>150 m depth) and 3000 km 2 of the shallow aquifer ( -1 and high values are widespread in the NE of the county. These concentrations exceed the regulatory guideline values for human consumption of 0.5 mg L -1 (WHO) or 0.9 mg L -1 (USA). The boron has desorbed from mineral surfaces as freshwater flushing displaces saline waters from the aquifers. In Bangladesh, desorption is driven by decreasing ionic strength, the equilibrium re-adjustment of mineral sorption sites to the low boron concentration in freshwater, and competitive exchange with HCO 3 /CO 3 . In deep Bangladesh aquifers in Barisal District (>250 m deep), boron enrichment delineates a buried estuary marking a previous course of the Ganges and/or Brahmaputra rivers. Boron enrichment is accompanied by ion-exchange that depletes Ca and enriches Na in the flushing freshwater. The patterns of enrichment and depletion indicate the direction of water quality change, in terms of salinization or freshening, with greater sensitivity than absolute chemical parameters

  1. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China); Cao, Yaan, E-mail: caoyaan@yahoo.com [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China)

    2013-05-15

    Indium and boron co-doped TiO{sub 2} photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO{sub 2} in interstitial mode, while indium is present as unique chemical species of O–In–Cl{sub x} (x = 1 or 2) on the surface. Compared with pure TiO{sub 2}, the narrowness of band gap of TiO{sub 2} doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl{sub x} (x = 1 or 2) and B{sub 2}O{sub 3} species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO{sub 2} showed the much higher photocatalytic activities than pure TiO{sub 2}, boron doped TiO{sub 2} (TiO{sub 2}–B) and indium doped TiO{sub 2} (TiO{sub 2}–In) under visible and UV light irradiation.

  2. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    International Nuclear Information System (INIS)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

    2013-01-01

    Indium and boron co-doped TiO 2 photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO 2 in interstitial mode, while indium is present as unique chemical species of O–In–Cl x (x = 1 or 2) on the surface. Compared with pure TiO 2 , the narrowness of band gap of TiO 2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl x (x = 1 or 2) and B 2 O 3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO 2 showed the much higher photocatalytic activities than pure TiO 2 , boron doped TiO 2 (TiO 2 –B) and indium doped TiO 2 (TiO 2 –In) under visible and UV light irradiation.

  3. Enhanced photocatalytic activity of titania with unique surface indium and boron species

    Science.gov (United States)

    Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

    2013-05-01

    Indium and boron co-doped TiO2 photocatalysts were prepared by a sol-gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV-vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO2 in interstitial mode, while indium is present as unique chemical species of O-In-Clx (x = 1 or 2) on the surface. Compared with pure TiO2, the narrowness of band gap of TiO2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O-In-Clx (x = 1 or 2) and B2O3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO2 showed the much higher photocatalytic activities than pure TiO2, boron doped TiO2 (TiO2-B) and indium doped TiO2 (TiO2-In) under visible and UV light irradiation.

  4. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  5. Determination of very small contents of boron by pH difference measurement

    International Nuclear Information System (INIS)

    Boehm, H.; Kirmse, E.M.; Schilbach, U.

    1983-01-01

    For the determination of boron as a trace element for food of plants in a very complicated salt matrix an analytical proceeding was developed, which allows to determine the content of boron without separation. The principle of analysis is based on the esterification of boric acid with a multivalent alcohol, which leeds to a monovalent strong complex acid. The change of the pH value of the analysing solution is measured. From the initial pH number, the end pH number, the volume of the analysing solution and the ionic product of water corresponding with the operating temperature the quantity of boric acid of boron that is equivalent the produced quantity of H + -ions is calculated by means of a linear program. The standard deviation of analytical proceeding amounts to 13.9 ng B. For the determination of the contents of boron of an unknown sample, five to ten separate measurements are carried out. For solutions, which are about 1x10 -6 M of boric acid, there are necessary 10 ml of sample for each separate measurement. The confidence interval of analytical results is found to be between +- 0.5 and +- 15.5% (P=0.99). For the determination of the content of boron in plant materials about 50-100 mg of dry weight are necessary. (Author)

  6. Determination of boron in Jabroc wood used as a shielding material in nuclear reactors

    International Nuclear Information System (INIS)

    Kamble, Granthali S.; Manisha, V.; Venkatesh, K.

    2015-01-01

    Jabroc are non-impregnated, densified wood laminates developed commercially for a wide range of industrial applications. Jabroc can be used with other neutron shielding materials such as Lead to form complex shielding structures. Its relative light weight and cleanliness in handling are additional features that make it a suitable candidate for the standard design of neutron shielding equipment. Jabroc can also be impregnated with Boron up to a maximum of 4% to be used in areas where Gamma radiation produced on Neutron capture reaches unacceptable dose rates. Boron impregnated Jabroc wood finds application in TAPS 3 and 4 as a shielding material for the Ion Chambers and the Horizontal Flux Units (HFU). The shielding property of this material is optimized by incorporating requisite amount of boron in wood. Boron content in this material has to be determined accurately prior to its use in the nuclear reactors. In this work a method was standardized to determine boron in Jabroc wood samples to check for conformance to specifications. The wood sample flakes were wetted with saturated barium hydroxide solution and dries under IR. The sample was ashed in a muffle furnace at 600℃ for 2 h

  7. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H J; Nesper, R [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  8. Toward Edge-Defined Holey Boron Nitride Nanosheets

    Science.gov (United States)

    Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

    2015-01-01

    "Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

  9. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  10. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  11. Chemistry and technology of boron and its compounds

    International Nuclear Information System (INIS)

    Zhigach, A.F.; Parfenov, B.P.; Svitsyn, R.A.

    1995-01-01

    The results of research dealing with development of technologies of boron trichloride, boron hydride, aminoderivative boron hydrides, metal borohydrides, carboranes, carborane-containing polymers, carried out at the institute of organoelemental compounds, are presented. Physicochemical properties of the compounds have been studied and analytical methods have been developed. Data on toxicity and fire hazard of boron compounds are provided

  12. Analysis of boron nitride by flame spectrometry methods

    International Nuclear Information System (INIS)

    Telegin, G.F.; Chapysheva, G.Ya.; Shilkina, N.N.

    1989-01-01

    A rapid method has been developed for determination of free and total boron contents as well as trace impurities in boron nitride by using autoclave sample decomposition followed by atomic emission and atomic absorption determination. The relative standard deviation is not greater than 0.03 in the determination of free boron 0.012 in the determination of total boron content

  13. A review on the determination of isotope ratios of boron with mass spectrometry.

    Science.gov (United States)

    Aggarwal, Suresh Kumar; You, Chen-Feng

    2017-07-01

    The present review discusses different mass spectrometric techniques-viz, thermal ionization mass spectrometry (TIMS), inductively coupled plasma mass spectrometry (ICPMS), and secondary ion mass spectrometry (SIMS)-used to determine 11 B/ 10 B isotope ratio, and concentration of boron required for various applications in earth sciences, marine geochemistry, nuclear technology, environmental, and agriculture sciences, etc. The details of the techniques-P-TIMS, which uses Cs 2 BO 2 + , N-TIMS, which uses BO 2 - , and MC-ICPMS, which uses B + ions for bulk analysis or B - and B + ions for in situ micro-analysis with SIMS-are highlighted. The capabilities, advantages, limitations, and problems in each mass spectrometric technique are summarized. The results of international interlaboratory comparison experiments conducted at different times are summarized. The certified isotopic reference materials available for boron are also listed. Recent developments in laser ablation (LA) ICPMS and QQQ-ICPMS for solids analysis and MS/MS analysis, respectively, are included. The different aspects of sample preparation and analytical chemistry of boron are summarized. Finally, the future requirements of boron isotope ratios for future applications are also given. Presently, MC-ICPMS provides the best precision and accuracy (0.2-0.4‰) on isotope ratio measurements, whereas N-TIMS holds the potential to analyze smallest amount of boron, but has the issue of bias (+2‰ to 4‰) which needs further investigations. © 2016 Wiley Periodicals, Inc. Mass Spec Rev 36:499-519, 2017. © 2016 Wiley Periodicals, Inc.

  14. Study of ceramic mixed boron element as a neutron shielding

    International Nuclear Information System (INIS)

    Ismail Mustapha; Mohd Reusmaazran Yusof; Md Fakarudin Ab Rahman; Nor Paiza Mohamad Hasan; Samihah Mustaffha; Yusof Abdullah; Mohamad Rabaie Shari; Airwan Affandi Mahmood; Nurliyana Abdullah; Hearie Hassan

    2012-01-01

    Shielding upon radiation should not be underestimated as it can causes hazard to health. Precautions on the released of radioactive materials should be well concerned and considered. Therefore, the combination of ceramic and boron make them very useful for shielding purpose in areas of low and intermediate neutron. A six grades of ceramic tile have been produced namely IMN05 - 5 % boron, IMN06 - 6 % boron, IMN07 - 7 % boron, IMN08 - 8 % boron, IMN09 - 9 % boron, IMN10 - 10 % boron from mixing, press and sintered process. Boron is a material that capable of absorbing and capturing neutron, so that neutron and gamma test were conducted to analyze the effectiveness of boron material in combination with ceramic as shielding. From the finding, percent reduction number of count per minute shows the ceramic tiles are capable to capture neutron. Apart from all the percentage of boron used, 10 % is the most effective shields since the percent reduction indicating greater neutron captured increased. (author)

  15. Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

    International Nuclear Information System (INIS)

    Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

    2015-01-01

    Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

  16. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  17. Density separation of boron particles. Final report

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-04-01

    A density distribution much broader than expected was observed in lots of natural boron powder supplied by two different sources. The material in both lots was found to have a rhombohedral crystal structure, and the only other parameters which seemed to account for such a distribution were impurities within the crystal structure and varying isotopic ratios. A separation technique was established to isolate boron particles in narrow densty ranges. The isolated fractions were subsequently analyzed for B 10 and total boron content in an effort to determine whether selective isotopic enrichment and nonhomogeneous impurity distribution were the causes for the broad density distribution of the boron powders. It was found that although the B 10 content remained nearly constant around 18%, the total boron content varied from 37.5 to 98.7%. One of the lots also was found to contain an apparently high level of alpha rhombohedral boron which broadened the density distribution considerably. During this work, a capability for removing boron particles containing gross amounts of impurities and, thereby, improving the overall purity of the remaining material was developed. In addition, the separation technique used in this study apparently isolated particles with alpha and beta rhombohedral crystal structures, although the only supporting evidence is density data

  18. Cell cycle dependence of boron uptake in various boron compounds used for neutron capture therapy

    International Nuclear Information System (INIS)

    Yoshida, F.; Matsumura, A.; Shibata, Y.; Yamamoto, T.; Nose, T.; Okumura, M.

    2000-01-01

    In neutron capture therapy, it is important that the tumor take boron in selectively. Furthermore, it is ideal when the uptake is equal in each tumor cell. Some indirect proof of differences in boron uptake among neoplastic cell cycles has been documented. However, no investigation has yet measured boron uptake directly. Using flow cytometry, in the present study cells were sorted by G0/G1 phase and G2/M phase, and the boron concentration of each fraction was measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The results were that BSH (sodiumborocaptate) and BPA (p-boronophenylalanine) had higher rates of boron uptake in the G2/M group than in the G0/G1 group. However, in BPA the difference was more prominent, which revealed a 2.2-3.3 times higher uptake of boron in the G2/M group than in the G0/G1 group. (author)

  19. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

    1978-09-01

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  20. Boronated monoclonal antibody 225.28S for potential use in neutron capture therapy of malignant melanoma

    International Nuclear Information System (INIS)

    Tamat, S.R.; Moore, D.E.; Patwardhan, A.; Hersey, P.

    1989-01-01

    The concept of conjugating boron cluster compounds to monoclonal antibodies has been examined by several groups of research workers in boron neutron capture therapy (BNCT). The procedures reported to date for boronation of monoclonal antibodies resulted in either an inadequate level of boron incorporation, the precipitation of the conjugates, or a loss of immunological activity. The present report describes the conjugation of dicesium-mercapto-undecahydrododecaborate (Cs2B12H11SH) to 225.28S monoclonal antibody directed against high molecular weight melanoma-associated antigens (HMW-MAA), using poly-L-ornithine as a bridge to increase the carrying capacity of the antibody and to minimize change in the conformational structure of antibody. The method produces a boron content of 1,300 to 1,700 B atoms per molecule 225.28S while retaining the immunoreactivity. Characterization in terms of the homogeneity of the conjugation of the boron-monoclonal antibody conjugates has been studied by gel electrophoresis and ion-exchange HPLC

  1. A DMS kinetic study of the boron oxides vapor in the combustion front of SHS system Mo + B

    International Nuclear Information System (INIS)

    Kashireninov, O.E.; Yuranov, I.A.

    1994-01-01

    The distribution of the boron oxides vapor in the combustion wave of the SHS system Mo + B has been studied by the dynamic mass spectrometry technique (DMS) to test the thermodynamically based hypothesis for the key role of gas-phase transport in solid-state combustion. The molecular beam sampling of the gases over the burning tablet was performed by a stationary probe cone from the moving combustion wave. Ion currents of boron oxides were recorded at 10--20 ms intervals that afforded spatial resolution of 0.1--0.2 mm. It has been found that the distribution of the boron oxides vapor pressure along the combustion wave corresponds to the known zones of preheating, reaction, and postcombustion. The rapid increase of B 2 O 2 pressure takes place in the preheating zone as a result of the reaction B(s) + B 2 O 3 (g) = B 2 O 2 (g). Boron oxides are not observed over the reaction zone because of their complete decay in the reaction with Mo(s) to form molybdenum boride(s). The appearance The appearance of boron oxide vapors over the postcombustion zone is due to the evaporation of B 2 O 3 (l). The effective kinetic parameters are estimated from the data obtained. The results show that solid-state combustion of the Mo + B system proceeds predominantly through formation of gas-phase boron oxides

  2. Developments in boron magnetic resonance imaging (MRI)

    International Nuclear Information System (INIS)

    Schweizer, M.

    1995-01-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain

  3. Characterization of boron tolerant bacteria isolated from a fly ash dumping site for bacterial boron remediation.

    Science.gov (United States)

    Edward Raja, Chellaiah; Omine, Kiyoshi

    2013-08-01

    Boron is an essential micronutrient for plants, but can above certain concentrations be toxic to living organisms. A major environmental concern is the removal of boron from contaminated water and fly ash. For this purpose, the samples were collected from a fly ash dumping site, Nagasaki prefecture, Japan. The chemical characteristics and heavy metal concentration of the samples were performed by X-ray fluorescent analysis and leaching test. For bacterial analysis, samples were collected in sterile plastic sheets and isolation was carried out by serial dilution method. The boron tolerant isolates that showed values of maximum inhibitory concentration toward boron ranging from 100 to 260 mM level were screened. Based on 16S rRNA sequencing and phylogenetic analysis, the isolates were most closely related to the genera Bacillus, Lysinibacillus, Microbacterium and Ralstonia. The boron tolerance of these strains was also associated with resistant to several heavy metals, such as As (III), Cr (VI), Cd, Cu, Pb, Ni, Se (III) and Zn. Indeed, these strains were arsenic oxidizing bacteria confirmed by silver nitrate test. These strains exhibited their salt resistances ranging from 4 to 15 % were determined in Trypticase soy agar medium. The boron tolerant strains were capable of removing 0.1-2.0 and 2.7-3.7 mg l(-1) boron from the medium and fly ash at 168 h. Thus, we have successfully identified the boron tolerant and removal bacteria from a fly ash dumping site for boron remediation.

  4. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  5. Application of drug delivery system for boron neutron capture therapy. Basic research toward clinical application

    International Nuclear Information System (INIS)

    Yanagie, Hironobu; Takahashi, Hiroyuki

    2010-01-01

    Tumour cell destruction in boron neutron-capture therapy (BNCT) is due to the nuclear reaction between 10 B and thermal neutrons ( 10 B+ 1 n → 7 Li+ 4 He (α) +2.31 MeV (93.7%)/2.79 MeV (6.3%)). The resulting lithium ions and αparticles are high linear energy transfer (LET) particles which give high biological effect. Their short range in tissue (5-9 μm) restricts radiation damage to those cells in which boron atoms are located at the time of neutron irradiation. BNCT has been applied clinically for the treatment of malignant brain tumors, malignant melanoma, head and neck cancer and hepatoma etc, recently. Sodium borocaptate (Na 2 10 B 12 H 11 SH; BSH) and borono-phenylalanine ( 10 BPA) are currently being used in clinical treatments. To achieve the selective delivery of boron atoms to cancer cells, drug delivery system (DDS) becomes an attractive intelligent technology as targeting and controlled release of drugs. We have firstly reported that 10 B atoms delivered by immunoliposomes are cytotoxic to human pancreatic carcinoma cells (AsPC-1) after thermal neutron irradiation in vitro. The intra-tumoural injection of boronated immunoliposomes can increase the retention of 10 B atoms in tumour cells, causing suppression of tumour growth in vivo following thermal neutron irradiation. We prepared polyethylene-glycol binding liposomes (PEG-liposomes) as an effective 10 B carrier to obviate phagocytosis by reticuloendotherial systems. We had prepared 10 BSH entrapped Water-in-Oil-in-Water (WOW) emulsion. The 10 B concentration in VX-2 tumour after intra-arterial injection of 10 BSH entrapped WOW emulsion was superior to the groups of 10 BSH entrapped conventional Lipiodol mix emulsion. 10 Boron entrapped WOW emulsion is one of the most useful for intra-arterial boron delivery carrier on BNCT to hepatocellular carcinoma. (author)

  6. In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Andre F.; Fischer, Martin; Gsell, Stefan; Schreck, Matthias [Universitaet Augsburg, Institut fuer Physik, 86135 Augsburg (Germany)

    2012-09-15

    In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO{sub 2} as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O = 1, a reduction factor of {proportional_to}50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N{sub 2} and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N{sub 2} concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 C contain high intrinsic stress that varies from -2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Behaviour of boron in Mandovi estuary (Goa)

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Anand, S.P.

    and alkalinity gave positive correlations with a linear variation. Though the overall behavioural pattern of boron indicated non-conservative nature, it showed a quasi-conservative character during premonsoon and a non-conservative during rest of the seasons...

  8. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    Gainer, G.M.

    1993-01-01

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  9. Boron-isotope fractionation in plants

    Energy Technology Data Exchange (ETDEWEB)

    Marentes, E [Univ. of Guelph, Dept. of Horticultural Science, Guelph, Ontario (Canada); Vanderpool, R A [USDA/ARS Grand Forks Human Nutrition Research Center, Grand Forks, North Dakota (United States); Shelp, B J [Univ. of Guelph, Dept. of Horticultural Science, Guelph, Ontario (Canada)

    1997-10-15

    Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, {sup 11}B and {sup 10}B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in {sup 11}B relative to the nutrient solution, and the leaves were enriched in {sup 10}B and the stem in {sup 11}B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

  10. Boron-isotope fractionation in plants

    International Nuclear Information System (INIS)

    Marentes, E.; Vanderpool, R.A.; Shelp, B.J.

    1997-01-01

    Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, 11 B and 10 B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in 11 B relative to the nutrient solution, and the leaves were enriched in 10 B and the stem in 11 B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

  11. Comparison of methods for the determination of boron in heavy water moderator

    International Nuclear Information System (INIS)

    Green, L.W.; Davey, E.C.; Gulens, J.; Longhurst, T.H.; Mislan, J.P.

    1984-01-01

    Five analysis methods were compared for the determination of boron in heavy water moderator: isotope dilution mass spectrometry, spectrophotometry, neutron activation, inductively coupled plasma -atomic emission spectrometry, and ion selective electrode potentiometry. Ten samples were analysed by each method; the results showed close agreement between all of the methods. Only mass spectrometry achieved the required precision ( 10 B concentration must be determined, only mass spectrometry and neutron activation are applicable

  12. Superplastic boronizing of duplex stainless steel under dual compression method

    International Nuclear Information System (INIS)

    Jauhari, I.; Yusof, H.A.M.; Saidan, R.

    2011-01-01

    Highlights: → Superplastic boronizing. → Dual compression method has been developed. → Hard boride layer. → Bulk deformation was significantly thicker the boronized layer. → New data on boronizing could be expanded the application of DSS in industries. - Abstract: In this work, SPB of duplex stainless steel (DSS) under compression method is studied with the objective to produce ultra hard and thick boronized layer using minimal amount of boron powder and at a much faster boronizing time as compared to the conventional process. SPB is conducted under dual compression methods. In the first method DSS is boronized using a minimal amount of boron powder under a fix pre-strained compression condition throughout the process. The compression strain is controlled in such a way that plastic deformation is restricted at the surface asperities of the substrate in contact with the boron powder. In the second method, the boronized specimen taken from the first mode is compressed superplastically up to a certain compressive strain under a certain strain rate condition. The process in the second method is conducted without the present of boron powder. As compared with the conventional boronizing process, through this SPB under dual compression methods, a much harder and thicker boronized layer thickness is able to be produced using a minimal amount of boron powder.

  13. Superplastic boronizing of duplex stainless steel under dual compression method

    Energy Technology Data Exchange (ETDEWEB)

    Jauhari, I., E-mail: iswadi@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yusof, H.A.M.; Saidan, R. [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2011-10-25

    Highlights: {yields} Superplastic boronizing. {yields} Dual compression method has been developed. {yields} Hard boride layer. {yields} Bulk deformation was significantly thicker the boronized layer. {yields} New data on boronizing could be expanded the application of DSS in industries. - Abstract: In this work, SPB of duplex stainless steel (DSS) under compression method is studied with the objective to produce ultra hard and thick boronized layer using minimal amount of boron powder and at a much faster boronizing time as compared to the conventional process. SPB is conducted under dual compression methods. In the first method DSS is boronized using a minimal amount of boron powder under a fix pre-strained compression condition throughout the process. The compression strain is controlled in such a way that plastic deformation is restricted at the surface asperities of the substrate in contact with the boron powder. In the second method, the boronized specimen taken from the first mode is compressed superplastically up to a certain compressive strain under a certain strain rate condition. The process in the second method is conducted without the present of boron powder. As compared with the conventional boronizing process, through this SPB under dual compression methods, a much harder and thicker boronized layer thickness is able to be produced using a minimal amount of boron powder.

  14. Boron dose determination for BNCT using Fricke and EPR dosimetry

    International Nuclear Information System (INIS)

    Wielopolski, L.; Ciesielski, B.

    1995-01-01

    In Boron Neutron Capture Therapy (BNCT) the dominant dose delivered to the tumor is due to α and 7 Li charged particles resulting from a neutron capture by 10 B and is referred to herein as the boron dose. Boron dose is directly attributable to the following two independent factors, one boron concentration and the neutron capture energy dependent cross section of boron, and two the energy spectrum of the neutrons that interact with boron. The neutron energy distribution at a given point is dictated by the incident neutron energy distribution, the depth in tissue, geometrical factors such as beam size and patient's dimensions. To account for these factors can be accommodated by using Monte Carlo theoretical simulations. However, in conventional experimental BNCT dosimetry, e.g., using TLDs or ionization chambers, it is only possible to estimate the boron dose. To overcome some of the limitations in the conventional dosimetry, modifications in ferrous sulfate dosimetry (Fricke) and Electron Paramagnetic Resonance (EPR) dosimetry in alanine, enable to measure specifically boron dose in a mixed gamma neutron radiation fields. The boron dose, in either of the dosimeters, is obtained as a difference between measurements with boronated and unboronated dosimeters. Since boron participates directly in the measurements, the boron dosimetry reflects the true contribution, integral of the neutron energy spectrum with boron cross section, of the boron dose to the total dose. Both methods are well established and used extensively in dosimetry, they are presented briefly here

  15. Boron-rich oligomers for BNCT

    International Nuclear Information System (INIS)

    Gula, M.; Perleberg, O.; Gabel, D.

    2000-01-01

    The synthesis of two BSH derivatives is described, which can be used for oligomerization in DNA-synthesizers. Synthesis pathways lead to final products in five and six steps, respectively. Because of chirality interesting results were expected. NMR-measurements confirm this expectation. Possible oligomers with high concentrations of boron can be attached to biomolecules. These oligomers can be explored with several imaging methods (EELS, PEM) to determine the lower detection limit of boron with these methods. (author)

  16. Rare earth-iron-boron premanent magnets

    International Nuclear Information System (INIS)

    Ghendehari, M.H.

    1988-01-01

    This patent describes a method for producing rare earth-iron-boron permanent magnets containing added rare earth oxide, comprising the steps of: (a) mixing a particulate alloy containing at least one rare earth metal, iron, and boron with at least one particulate rare earth oxide; (b) aligning magnetic domains of the mixture in a magnetic field; (c) compacting the aligned mixture to form a shape; and (d) sintering the compacted shape

  17. Quantitative analysis of boron by neutron radiography

    International Nuclear Information System (INIS)

    Bayuelken, A.; Boeck, H.; Schachner, H.; Buchberger, T.

    1990-01-01

    The quantitative determination of boron in ores is a long process with chemical analysis techniques. As nuclear techniques like X-ray fluorescence and activation analysis are not applicable for boron, only the neutron radiography technique, using the high neutron absorption cross section of this element, can be applied for quantitative determinations. This paper describes preliminary tests and calibration experiments carried out at a 250 kW TRIGA reactor. (orig.) [de

  18. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

    1991-05-01

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  19. Boronization on NSTX using Deuterated Trimethylboron

    International Nuclear Information System (INIS)

    Blanchard, W.R.; Gernhardt, R.C.; Kugel, H.W.; LaMarche, P.H.

    2002-01-01

    Boronization on the National Spherical Torus Experiment (NSTX) has proved to be quite beneficial with increases in confinement and density, and decreases in impurities observed in the plasma. The boron has been applied to the interior surfaces of NSTX, about every 2 to 3 weeks of plasma operation, by producing a glow discharge in the vacuum vessel using deuterated trimethylboron (TMB) in a 10% mixture with helium. Special NSTX requirements restricted the selection of the candidate boronization method to the use of deuterated boron compounds. Deuterated TMB met these requirements, but is a hazardous gas and special care in the execution of the boronization process is required. This paper describes the existing GDC, Gas Injection, and Torus Vacuum Pumping System hardware used for this process, the glow discharge process, and the automated control system that allows for remote operation to maximize both the safety and efficacy of applying the boron coating. The administrative requirements and the detailed procedure for the setup, operation and shutdown of the process are also described

  20. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  1. Current Progress of Capacitive Deionization for Removal of Pollutant Ions

    Science.gov (United States)

    Gaikwad, Mahendra S.; Balomajumder, Chandrajit

    2016-08-01

    A mini review of a recently developing water purification technology capacitive deionization (CDI) applied for removal of pollutant ions is provided. The current progress of CDI for removal of different pollutant ions such as arsenic, fluoride, boron, phosphate, lithium, copper, cadmium, ferric, and nitrate ions is presented. This paper aims at motivating new research opportunities in capacitive deionization technology for removal of pollutant ions from polluted water.

  2. New possibilities of the isotope distribution examination in irradiated absorbing materials using secondary ion mass spectrometry method

    International Nuclear Information System (INIS)

    Goncharenko, Y. D.; Evseev, L.A.; Risovany, V.D.

    2005-01-01

    The SIMS technique (with using a linear analysis and 2D surface imaging) has been to measure the radial distribution of the boron isotope ratio in the boron carbide pellets irradiated in the fast reactor. It was revealed that a radial distribution of isotope ratio in the boron carbide pellets is significantly different after irradiation in fast and thermal reactors. It was showed the advisability of using ion images for such examinations. (Author)

  3. Removal of Aqueous Boron by Using Complexation of Boric Acid with Polyols: A Raman Spectroscopic Study

    Energy Technology Data Exchange (ETDEWEB)

    Eom, Ki Heon; Jeong, Hui Cheol; An, Hye Young; Lim, Jun-Heok; Lee, Jea-Keun; Won, Yong Sun [Pukyong National University, Busan (Korea, Republic of)

    2015-12-15

    Boron is difficult to be removed from seawater by simple RO (reverse osmosis) membrane process, because the size of boric acid (B(OH){sub 3}), the major form of aqueous boron, is as small as the nominal pore size of RO membrane. Thus, the complexation of boric acid with polyols was suggested as an alternative way to increase the size of aqueous boron compounds and the complexation behavior was investigated with Raman spectroscopy. As a reference, the Raman peak for symmetric B-O stretching vibrational mode both in boric acid and borate ion (B(OH){sub 4}{sup -}) was selected. A Raman peak shift (877 cm{sup -1} →730 cm{sup -1}) was observed to confirm that boric acid in water is converted to borate ion as the pH increases, which is also correctly predicted by frequency calculation. Meanwhile, the Raman peak of borate ion (730 cm{sup -1}) did not appear as the pH increased when polyols were applied into aqueous solution of boric acid, suggesting that the boric acid forms complexing compounds by combining with polyols.

  4. Semiconducting icosahedral boron arsenide crystal growth for neutron detection

    Science.gov (United States)

    Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

    2011-03-01

    Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

  5. Electron microscopy study of radiation effects in boron carbide

    International Nuclear Information System (INIS)

    Stoto, T.

    1987-03-01

    Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 1700 0 C was an important technical part of this work [fr

  6. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Mannix, A. J.; Zhou, X. -F.; Kiraly, B.; Wood, J. D.; Alducin, D.; Myers, B. D.; Liu, X.; Fisher, B. L.; Santiago, U.; Guest, J. R.; Yacaman, M. J.; Ponce, A.; Oganov, A. R.; Hersam, M. C.; Guisinger, N. P.

    2015-12-17

    At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

  7. Development of magnetic resonance technology for noninvasive boron quantification

    International Nuclear Information System (INIS)

    Bradshaw, K.M.

    1990-11-01

    Boron magnetic resonance imaging (MRI) and spectroscopy (MRS) were developed in support of the noninvasive boron quantification task of the Idaho National Engineering Laboratory (INEL) Power Burst Facility/Boron Neutron Capture Therapy (PBF/BNCT) program. The hardware and software described in this report are modifications specific to a GE Signa trademark MRI system, release 3.X and are necessary for boron magnetic resonance operation. The technology developed in this task has been applied to obtaining animal pharmacokinetic data of boron compounds (drug time response) and the in-vivo localization of boron in animal tissue noninvasively. 9 refs., 21 figs

  8. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  9. The effect of boron deficiency on gene expression and boron compartmentalization in sugarbeet

    Science.gov (United States)

    NIP5, BOR1, NIP6, and WRKY6 genes were investigated for their role in boron deficiency in sugar beet, each with a proposed role in boron use in model plant species. All genes showed evidence of polymorphism in fragment size and gene expression in the target genomic DNA and cDNA libraries, with no co...

  10. Research of boron conversion coating in neutron detector with boron deposited GEM

    International Nuclear Information System (INIS)

    Ye Di; Sun Zhijia; Zhou Jianrong; Wang Yanfeng; Yang Guian; Xu Hong; Chen Yuanbai; Xiao Yu; Diao Xungang

    2014-01-01

    GEM is a flourishing new gas detector and nowadays its technology become more mature. It has outstanding properties, such as excellent position resolution, high counting rate, radiation resistance, simple and flexible signal readout, can be large-area detector, wide application range. Detector with boron deposited GEM uses multilayer GEM with deposited boron film as neutron conversion carrier which reads out the information of neutron shot from the readout electrode with gas amplification from every GEM layer. The detector is high performance which can meet the demands of neutron detector of a new generation. Boron deposited neutron conversion electrode with boron deposited cathode and GEM included is the core part of the detector. As boron is a high-melting-point metalloid (> 2 000 ℃), electroplating and thermal evaporation are inappropriate ways. So finding a way to deposit boron on electrode which can meet the demands become a key technology in the development of neutron detector with boron deposited GEM. Compared with evaporation, sputtering has features such as low deposition temperature, high film purity, nice adhesive, thus is appropriate for our research. Magnetron sputtering is a improved way of sputtering which can get lower sputtering air pressure and higher target voltage, so that we can get better films. Through deposit process, the research uses magnetron sputtering to deposit pure boron film on copper electrode and GEM film. This method can get high quality, nice adhere, high purity, controllable uniformity, low cost film with high speed film formation. (authors)

  11. The study of high-boron steel and high-boron cast iron used for shield

    International Nuclear Information System (INIS)

    Pan Xuerong; Lu Jixin; Wen Yaozeng; Wang Zhaishu; Cheng Jiantin; Cheng Wen; Shun Danqi; Yu Jinmu

    1996-12-01

    The smelting, forging, heat-treatment technology and the mechanical properties of three kinds of high-boron steels (type 1: 0.5% boron; type 2: 0.5% boron and 4% or 2% nickel; type 3: 0.5% boron, 0.5% nickel and 0.5% molybdenum) were studied. The test results show that the technology for smelting, forging and heat-treatment (1050 degree C/0.5 h water cooled + 810 degree C/1 h oil cooled) in laboratory is feasible. Being sensitive to notch, the impact toughness of high-boron steel type 1 is not steady and can not meet the technology requirements on mechanical properties. The mechanical properties of both high-boron steel type 2 and type 3 can meet the technological requirements. The smelting technology of high-boron casting iron containing 0.5% boron was researched. The tests show that this casting iron can be smelted in laboratory and its properties can basically satisfy the technology requirements. (10 refs., 6 figs., 11 tab.)

  12. Real-time boronization in PBX-M using erosion of solid boronized targets

    International Nuclear Information System (INIS)

    Kugel, H.W.; Timberlake, J.; Bell, R.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Tighe, W.; Hirooka, Y.

    1994-11-01

    Thirty one real-time boronizations were applied to PBX-M using the plasma erosion of solid target probes. More than 17 g of boron were deposited in PBX-M using this technique. The probes were positioned at the edge plasma to optimize vaporization and minimize spallation. Auger depth profile analysis of poloidal and toroidal deposition sample coupon arrays indicate that boron was transported by the plasma around the torus and deep into the divertors. During discharges with continuous real-time boronization, low-Z and high-Z impurities decreased rapidly as plasma surfaces were covered during the first 20-30 discharges. After boronization, a short-term improvement in plasma conditions persisted prior to significant boron erosion from plasma surfaces, and a longer term, but less significant improvement persisted as boron farther from the edge continued gettering. Real-time solid target boronization has been found to be very effective for accelerating conditioning to new regimes and maintaining high performance plasma conditions

  13. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  14. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

    2007-01-01

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively

  15. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-10-22

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

  16. Biodistribution, toxicity and efficacy of a boronated porphyrin for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Miura, Michiko; Micca, P.; Fairchild, R.; Slatkin, D.; Gabel, D.

    1992-01-01

    Boron-containing porphyrins may be useful for boron neutron capture therapy (BNCT) in the treatment of brain tumors. Porphyrins have been shown to accumulate in tumor tissue and to be essentially excluded from normal brain. However, problems of toxicity may prevent some boron-containing porphyrins from being considered for BNCT. The authors have synthesized the boronated porphyrin 2,4-bis-vinyl-o-nidocarboranyl-deuteroporphyrin IX (VCDP). Preliminary studies in tumor-bearing mice showed considerable uptake of boron at a total dose of 150 μg/gbw with low mortality. They now report that a total dose to mice of ∼ 275 μg VCDP/gbw administered in multiple intraperitoneal (ip) injections can provide 40-50μg B per gram of tumor with acceptable toxicity. Toxicity experiments and a preliminary trial of BNCT in mice given such doses are also reported

  17. Fatigue and wear of metalloid-ion-implanted metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Richter, E.; Rauschenbach, B.; Blochwitz, C.

    1985-01-01

    The effect of metalloid ion implantation on the fatigue behaviour and wear of nickel and two steels has been investigated. These metals were implanted with boron, carbon and nitrogen ions at energies from 30 to 60 keV and with doses from 1 X 10 16 to 1 X 10 18 ions cm -2 at room temperature. The mechanical behaviour of fatigued nickel was studied in push-pull tests at room temperature. Wear measurements were made using a pin-and-disc technique. The surface structure, dislocation arrangement and modification of the implantation profile resulting from mechanical tests on metals which had been implanted with metalloid ions were examined using high voltage electron microscopy, transmission high energy electron diffraction, scanning electron microscopy and Auger electron spectroscopy. It is reported that nitrogen and boron ion implantation improves the fatigue lifetime, changes the number and density of the slip bands and modifies the dislocation arrangements in nickel. The cyclic deformation leads to recrystallization of the boron-ion-induced amorphous structure of nickel and to diffusion of the boron and nitrogen in the direction of the surface. The wear behaviour of steels was improved by implantation of mass-separated ions and by implantation of ions without mass separation. (Auth.)

  18. Redistribution of boron in leaves reduces boron toxicity.

    Science.gov (United States)

    Reid, Robert J; Fitzpatrick, Kate L

    2009-11-01

    High soil boron (B) concentrations lead to the accumulation of B in leaves, causing the development of necrotic regions in leaf tips and margins, gradually extending back along the leaf. Plants vary considerably in their tolerance to B toxicity, and it was recently discovered that one of the tolerance mechanisms involved extrusion of B from the root. Expression of a gene encoding a root B efflux transporter was shown to be much higher in tolerant cultivars. In our current research we have shown that the same gene is also upregulated in leaves. However, unlike in the root, the increased activity of the B efflux transporter in the leaves cannot reduce the tissue B concentration. Instead, we have shown that in tolerant cultivars, these transporters redistribute B from the intracellular phase where it is toxic, into the apoplast which is much less sensitive to B. These results provide an explanation of why different cultivars with the same leaf B concentrations can show markedly different toxicity symptoms. We have also shown that rain can remove a large proportion of leaf B, leading to significant improvements of growth of both leaves and roots.

  19. Boron-containing thioureas for neutron capture therapy

    International Nuclear Information System (INIS)

    Ketz, H.

    1993-01-01

    Melanin is produced in large amounts in malignant melanotic melanomas. Because thiourea compounds are covalently incorporated into melanin during its biosynthesis, the preparation of boronated thiourea-derivatives is of particular interest for the BNCT (Boron Neutron Capture Therapy). Accumulation of boron in tumors by means of boronated thiourea-derivatives may therefore provide levels of 10 B which are useful for BNCT. In BNCT the tumor containing the boron compound is irradiated with epithermal neutrons to generate He- and Li-nuclei from the 10 B which can then destroy the tumor cells. Because of the short ranges of these particles (approximately one cell diameter) the damage will be almost exclusively confined to the tumor leaving normal tissue unharmed. High accumulation of 2-mercapto-1-methylimidazole (methimazole) in melanotic melanomas has been described in the literature. Boronated derivatives of methimazole were therefore synthesized. Boron was in the form of a boronic acid, a nido-carbonate and a mercaptoundeca hydro-closo-dodecaborate (BSH). The synthesis of the boron cluster derivatives of methimazole (nido-carborate- and BSH-derivatives) with 9 resp. 12 boron atoms in the molecule were expected to achieve higher concentrations of boron in the tumor than in the case of the boronic acid compound with its single boron atom. (orig.) [de

  20. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    International Nuclear Information System (INIS)

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    Highlights: • Gel electrolyte is prepared and used in electric double layer capacitor. • Insertion of boron crosslinks into GO agglomerates opens channels for ion migration. • Solid supercapacitors show excellent specific capacitance and cycle stability. • Nanocomposite electrolyte shows better thermal stability and mechanical properties. - Abstract: A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs

  1. Highly-focused boron implantation in diamond and imaging using the nuclear reaction {sup 11}B(p, α){sup 8}Be

    Energy Technology Data Exchange (ETDEWEB)

    Ynsa, M.D., E-mail: m.ynsa@uam.es [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Ramos, M.A. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Skukan, N. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia); Torres-Costa, V. [Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid (Spain); Jakšić, M. [Laboratory for Ion Beam Interactions, Ruđer Bošković Institute, Bijenička 54, HR-10000 Zagreb (Croatia)

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm{sup 2} and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction {sup 11}B(p, α){sup 8}Be at E{sub p} = 660 keV. This reaction has a high Q-value (8.59 MeV for α{sub 0} and 5.68 MeV for α{sub 1}) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  2. Isotopic analysis of boron by thermal ionization mass spectrometry

    International Nuclear Information System (INIS)

    Kakazu, M.H.; Sarkis, J.E.S.; Souza, I.M.S.

    1991-07-01

    This paper presents a methodology for isotopic analysis of boron by thermal ionization mass spectrometry technique through the ion intensity measurement of Na 2 BO + 2 in H 3 BO 3 , B o and B 4 C. The samples were loaded on single tantalum filaments by different methods. In the case of H 3 BO 3 , the method of neutralization with NaOH was used. For B 4 C the alcaline fusion with Na 2 CO 3 and for B o dissolution with 1:1 nitric sulfuric acid mixture followed by neutralization with NaOH was used. The isotopic ratio measurements were obtained by the use of s Faraday cup detector with external precision of ±0,4% and accuracy of ±0,1%, relative to H 3 BO 3 isotopic standard NBS 951. The effects of isotopic fractionation was studied in function of the time during the analyses and the different chemical forms of deposition. (author)

  3. A cubic boron nitride film-based fluorescent sensor for detecting Hg2+

    Science.gov (United States)

    Liu, W. M.; Zhao, W. W.; Zhang, H. Y.; Wang, P. F.; Chong, Y. M.; Ye, Q.; Zou, Y. S.; Zhang, W. J.; Zapien, J. A.; Bello, I.; Lee, S. T.

    2009-05-01

    Cubic boron nitride (cBN) film-based sensors for detecting Hg2+ ions were developed by surface functionalization with dansyl chloride. To immobilize dansyl chloride, 3-aminopropyltriethoxy silane was modified on hydroxylated cBN surfaces to form an amino-group-terminated self-assembled monolayer. The covalent attachment of the amino groups was confirmed by x-ray photoelectron spectroscopy. The selectivity and sensitivity of the sensors to detect diverse metal cations in ethanol solutions were studied by using fluorescence spectroscopy, revealing a great selectivity to Hg2+ ions. Significantly, the dansyl-chloride-functionalized cBN film sensors were recyclable after the sensing test.

  4. Boron removal in radioactive liquid waste by forward osmosis membrane

    Energy Technology Data Exchange (ETDEWEB)

    Doo Seong Hwang; Hei Min Choi; Kune Woo Lee; Jei Kwon Moon [KAERI, Daejeon (Korea, Republic of)

    2013-07-01

    This study investigated the treatment of boric acid contained in liquid radioactive waste using a forward osmosis membrane. The boron permeation through the membrane depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7 and increases with an increase of the osmotic driving force. The boron flux decreases slightly with the salt concentration, but is not heavily influenced by a low salt concentration. The boron flux increases linearly with the concentration of boron. No element except for boron was permeated through the FO membrane in the multi-component system. The maximum boron flux is obtained in an active layer facing a draw solution orientation of the CTA-ES membrane under conditions of less than pH 7 and high osmotic pressure. (authors)

  5. 15th International Conference on Boron Chemistry (IMEBORON XV)

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil

    2015-01-01

    Roč. 87, č. 2 (2015), s. 121 ISSN 0033-4545 Institutional support: RVO:61388980 Keywords : boranes * boron * boron materials * carboranes * IMEBORON XV * medicinal chemistry Subject RIV: CA - Inorganic Chemistry

  6. Structure prediction of boron-doped graphene by machine learning

    Science.gov (United States)

    M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

    2018-06-01

    Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

  7. Boron: out of the sky and onto the ground

    International Nuclear Information System (INIS)

    Kuehl, D.K.

    1975-01-01

    Now an accepted, engineered material for aerospace applications, boron is taking its place on the ground. Both current production applications, prototype (development) applications, and speculative applications abound. In the leisure product market, boron epoxy or boron aluminum has been used or tried in golf clubs (in combination with graphite epoxy or to reinforce aluminum or steel), in tennis racquets, in bicycles, racing shells, skis and skipoles, bows and arrows, and others. In the industrial area, boron has been used to reduce fatigue, increase stiffness, or for its abrasive properties. Textile machinery, honing tools, and cut off wheels or saws are among the applications. In the medical field, prosthetics and orthotic braces, wheel chairs, canes, and crutches are all good applications for boron. Applications for boron in transportation, construction, and heavy industry are also possible. The volume of boron used in these applications could have a major impact on prices, making boron composite parts cost competitive with conventional materials. (U.S.)

  8. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.; Drouiche, Nadjib; Lounici, Hakim; Mameri, Nabil; Ghaffour, NorEddine

    2013-01-01

    , this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous

  9. Removal of boron from ceramic industry wastewater by adsorption-flocculation mechanism using palm oil mill boiler (POMB) bottom ash and polymer.

    Science.gov (United States)

    Chong, Mei Fong; Lee, Kah Peng; Chieng, Hui Jiun; Syazwani Binti Ramli, Ili Izyan

    2009-07-01

    Boron is extensively used in the ceramic industry for enhancing mechanical strength of the tiles. The discharge of boron containing wastewater to the environment causes severe pollution problems. Boron is also dangerous for human consumption and causes organisms' reproductive impediments if the safe intake level is exceeded. Current methods to remove boron include ion-exchange, membrane filtration, precipitation-coagulation, biological and chemical treatment. These methods are costly to remove boron from the wastewater and hence infeasible for industrial wastewater treatment. In the present research, adsorption-flocculation mechanism is proposed for boron removal from ceramic wastewater by using Palm Oil Mill Boiler (POMB) bottom ash and long chain polymer or flocculant. Ceramic wastewater is turbid and milky in color which contains 15 mg/L of boron and 2000 mg/L of suspended solids. The optimum operating conditions for boron adsorption on POMB bottom ash and flocculation using polymer were investigated in the present research. Adsorption isotherm of boron on bottom ash was also investigated to evaluate the adsorption capacity. Adsorption isotherm modeling was conducted based on Langmuir and Freundlich isotherms. The results show that coarse POMB bottom ash with particle size larger than 2 mm is a suitable adsorbent where boron is removed up to 80% under the optimum conditions (pH=8.0, dosage=40 g bottom ash/300 ml wastewater, residence time=1h). The results also show that KP 1200 B cationic polymer is effective in flocculating the suspended solids while AP 120 C anionic polymer is effective in flocculating the bottom ash. The combined cationic and anionic polymers are able to clarify the ceramic wastewater under the optimum conditions (dosage of KP 1200 B cationic polymer=100 mg/L, dosage of AP 120 C anionic polymer=50 mg/L, mixing speed=200 rpm). Under the optimum operating conditions, the boron and suspended solids concentration of the treated wastewater were

  10. Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

    Directory of Open Access Journals (Sweden)

    A. Picciotto

    2014-08-01

    Full Text Available We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This result can be ascribed to the nature of the long laser-pulse interaction with the target and with the expanding plasma, as well as to the optimal target geometry and composition. The possibility of an impact on future applications such as nuclear fusion without production of neutron-induced radioactivity and compact ion accelerators is anticipated.

  11. Boron tolerance in NS wheat lines

    Directory of Open Access Journals (Sweden)

    Brdar Milka

    2006-01-01

    Full Text Available Boron is an essential micronutrient for higher plants. Present in excessive amounts boron becomes toxic and can limit plant growth and yield. Suppression of root growth is one of the symptoms of boron toxicity in wheat. This study was undertaken to investigate the response of 10 perspective NS lines of wheat to high concentrations of boron. Analysis of root growth was done on young plants, germinated and grown in the presence of different concentrations of boric acid (0, 50,100 and 150 mg/1. Significant differences occurred between analyzed genotypes and treatments regarding root length. Average suppression of root growth was between 11,6 and 34,2%, for line NS 252/02 are even noted 61,4% longer roots at treatments in relation to the control. Lines with mean suppression of root growth less than 20% (NS 101/02, NS 138/01, NS 53/03 and NS 73/02 may be considered as boron tolerant. Spearmans coefficients showed high level of agreement regarding rang of root length for genotypes treated with 100 and 150 mg H3BO3/l.

  12. Hot ductility behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; Cabrera, J.M.

    2007-01-01

    The current study analyses the influence of boron contents (between 29 and 105 ppm) on the hot ductility of boron microalloyed steels. For this purpose, hot tensile tests were carried out at different temperatures (700, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s -1 . In general, results revealed an improvement of the hot ductility of steels at increasing boron content. At 700, 900 and 1000 deg. C the ductility is higher than at 800 deg. C, where boron microalloyed steels exhibit a region of ductility loss (trough region). Likewise, dynamic recrystallization only occurred at 900 and 1000 deg. C. The fracture surfaces of the tested steels at temperatures giving the high temperature ductility regime show that the fracture mode is a result of ductile failure, whereas it is ductile-brittle failure in the trough region. Results are discussed in terms of dynamic recrystallization and boron segregation towards austenite grain boundaries, which may retard the formation of pro-eutectoid ferrite and increase grain boundary cohesion

  13. Boron-Dipyrromethene Dyes for Ion Recognition Studies

    Indian Academy of Sciences (India)

    pc

    Singlet state energy levels of porphyrins with various cores λ abs ... Chem. Rev. 250, 468 (2006). M. Yedukondalu, M. Ravikanth, Coord. Chem. Rev. 255, 547 ..... 525 550 575 600 625 650 675 700 725 750. 0. 200. 400. 600. 800. 1000. 580.

  14. Amorphization of tantalum by boron and phosphorus ion implantation

    International Nuclear Information System (INIS)

    Thome, L.; Benyagoub, A.; Bernas, H.; Pivin, J.C.; Cahn, R.W.

    1984-01-01

    The nature and depth dependence of the disorder produced by B and P implantation in Ta single crystals were studied in situ via channeling experiments and after implantation via grazing incidence electron diffraction experiments. The correlation of experimental results with implanted impurity profiles determined by SIMS shows that amorphous Ta-B and Ta-P alloys are produced for, respectively, 19% and 8% B and P concentrations in the implanted layer [fr

  15. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    Aldabergenov, M.K.; Balakaeva, T.G.

    1995-01-01

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P 2 O 5 ) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  16. Determination of free carbon content in boron carbide ceramic powders

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Lima, N.B. de; Paschoal, J.O.A.

    1990-01-01

    Boron carbide is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Free carbon is always found as a process dependent impurity in boron carbide. The development of procedures for its detection is required because its presence leads to a degradation of the boron carbide properties. In this work, several procedures for determining free carbon content in boron carbide specimens are reported and discussed for comparison purposes. (author) [pt

  17. Screening of Wheat Genotypes for Boron Efficiency in Bangladesh

    Science.gov (United States)

    A number of Bangladeshi wheat genotypes (varieties and advanced lines) have been tested for boron efficiency through sand culture experiments over two years (2007-08 & 2008-09) against two Thai check varieties ‘Fang 60’ (boron efficient) and ‘SW41’ (boron inefficient). Performances of the genotypes ...

  18. The effects of boron management on soil microbial population and ...

    African Journals Online (AJOL)

    Soil microorganisms directly influence boron content of soil as maximum boron release corresponds with the highest microbial activity. The objective of this study is to determine the effects of different levels of boron fertilizer on microbial population, microbial respiration and soil enzyme activities in different soil depths in ...

  19. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  20. Oxidation of boron carbide at high temperatures

    International Nuclear Information System (INIS)

    Steinbrueck, Martin

    2005-01-01

    The oxidation kinetics of various types of boron carbides (pellets, powder) were investigated in the temperature range between 1073 and 1873 K. Oxidation rates were measured in transient and isothermal tests by means of mass spectrometric gas analysis. Oxidation of boron carbide is controlled by the formation of superficial liquid boron oxide and its loss due to the reaction with surplus steam to volatile boric acids and/or direct evaporation at temperatures above 1770 K. The overall reaction kinetics is paralinear. Linear oxidation kinetics established soon after the initiation of oxidation under the test conditions described in this report. Oxidation is strongly influenced by the thermohydraulic boundary conditions and in particular by the steam partial pressure and flow rate. On the other hand, the microstructure of the B 4 C samples has a limited influence on oxidation. Very low amounts of methane were produced in these tests

  1. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  2. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  3. BC-454 boron-loaded plastic scintillator

    International Nuclear Information System (INIS)

    Bellian, J.G.

    1984-01-01

    Prototype samples of plastic scintillators containing up to 10% by weight of natural boron have been produced. The maximum size scintillators made to date are 28 mm dia. x 100 mm long. Rods containing up to 2% boron are now made routinely and work is progressing on higher concentrations. The plastics are clear and emit the same blue fluorescence as other common plastic scintillators. It is expected that rods up to 3'' dia. containing 5% boron will be produced during the next few months. BC-454 is particularly useful in neutron research, materials studies, some types of neutron dosimetry, and monitoring of medium to high energy neutrons in the presence of other types radiation. It combines attractive features that enhance its usefulness to the physics community

  4. On the Mechanism of Boron Ignition

    Science.gov (United States)

    Keil, D. G.; Dreizin, E. L.; Felder, W.; Vicenzi, E. P.

    1997-01-01

    Boron filaments were electrically heated in air and argon/oxygen mixtures while their resistance, temperature, and radiation at the wavelengths of BO and BO2 bands were monitored. The filaments 'burned' in two distinct stages. Samples of the filaments were quenched at different times before and during the burning and analyzed using electron microscopy. The beginning of the first stage combustion characterized by a local resistance minimum, a sharp spike in boron oxide radiation emission, and a rapid rise in temperature, occurred at 1500 +/- 70 deg. C, independent of pre-heating history and oxygen content (540%) in the gas environment. The data suggest that a phase transition occurs in the filaments at this temperature that triggers stage one combustion. Significant amounts of oxygen were found inside quenched filaments. Large spherical voids formed in the boron filaments during their second stage combustion which is interpreted to indicate a crucial role for the gas dissolution processes in the combustion scenario.

  5. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Peterson, P.L.; Winters, J.

    1992-01-01

    A system has been added to the DIII-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose f the boron film is to reduce the levels of impurity atoms in the DIII-D plasmas. Experiments following the application of the boron film in DIII-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime

  6. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

    1991-09-01

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  7. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water. Copyright © 2013 Elsevier Ltd. All rights reserved.

  8. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  9. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  10. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  11. Proton linacs for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Lennox, A.J.

    1993-08-01

    Recent advances in the ability to deliver boron-containing drugs to brain tumors have generated interest in ∼4 MeV linacs as sources of epithermal neutrons for radiation therapy. In addition, fast neutron therapy facilities have been studying methods to moderate their beams to take advantage of the high cross section for epithermal neutrons on boron-10. This paper describes the technical issues involved in each approach and presents the motivation for undertaking such studies using the Fermilab linac. the problems which must be solved before therapy can begin are outlined. Status of preparatory work and results of preliminary measurements are presented

  12. Titanium reinforced boron-polyimide composite

    Science.gov (United States)

    Clark, G. A.; Clayton, K. I.

    1969-01-01

    Processing techniques for boron polyimide prepreg were developed whereby composites could be molded under vacuum bag pressure only. A post-cure cycle was developed which resulted in no loss in room temperature mechanical properties of the composite at any time during up to 16 hours at 650 F. A design utilizing laminated titanium foil was developed to achieve a smooth transition of load from the titanium attachment points into the boron-reinforced body of the structure. The box beam test article was subjected to combined bending and torsional loads while exposed to 650 F. Loads were applied incrementally until failure occurred at 83% design limit load.

  13. Designing your boron-charging system

    International Nuclear Information System (INIS)

    Miller, J.

    1979-01-01

    High-pressure positive-displacement pumps used in the boron-charging setups of pressurized-water (PWR) nuclear plants because of their inherently high efficiencies over a wide range of pressures and speeds are described. Hydrogen-saturated water containing 4-12% boric acid is fed to the pump from a volume-control tank under a gas blanket. Complicated piping and the pulsation difficulties associated with reciprocating pumps make hydrogen-saturated boron-charging systems a challenge to the designer. The article describes the unusual hydraulics of the systems to help assure a trouble-free design

  14. Model for calculating the boron concentration in PWR type reactors

    International Nuclear Information System (INIS)

    Reis Martins Junior, L.L. dos; Vanni, E.A.

    1986-01-01

    A PWR boron concentration model has been developed for use with RETRAN code. The concentration model calculates the boron mass balance in the primary circuit as the injected boron mixes and is transported through the same circuit. RETRAN control blocks are used to calculate the boron concentration in fluid volumes during steady-state and transient conditions. The boron reactivity worth is obtained from the core concentration and used in RETRAN point kinetics model. A FSAR type analysis of a Steam Line Break Accident in Angra I plant was selected to test the model and the results obtained indicate a sucessfull performance. (Author) [pt

  15. Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

    CERN Document Server

    Kaschieva, S; Skorupa, W

    2003-01-01

    The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O sup + or B sup +) implanted samples are gamma-irradiated with sup 6 sup 0 Co. Gamma irradiation creates electron levels at the SiSiO sub 2 interface of the samples in a different way depending on the type of the previously implanted atoms (O sup + or B sup +). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. (orig.)

  16. Regime of very high confinement in the boronized DIII-D tokamak

    International Nuclear Information System (INIS)

    Jackson, G.L.; Winter, J.; Taylor, T.S.; Burrell, K.H.; DeBoo, J.C.; Greenfield, C.M.; Groebner, R.J.; Hodapp, T.; Holtrop, K.; Lazarus, E.A.; Lao, L.L.; Lippmann, S.I.; Osborne, T.H.; Petrie, T.W.; Phillips, J.; James, R.; Schissel, D.P.; Strait, E.J.; Turnbull, A.D.; West, W.P.; DIII-D Team

    1991-01-01

    Following boronization, tokamak discharges in DIII-D have been obtained with confinement times up to a factor of 3.5 above the ITER89-P L-mode scaling and 1.8 times greater than the DIII-D/JET H-mode scaling relation. Very high confinement phases are characterized by relatively high central density with n e (0)∼1x10 20 m -3 , and central ion temperatures up to 13.6 keV at moderate plasma currents (1.6 MA) and heating powers (12.5--15.3 MW). These discharges exhibit a low fraction of radiated power, P≤25%, Z eff (0) close to unity, and lower impurity influxes than comparable DIII-D discharges before boronization

  17. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  18. Development and method of use of a mass spectrometric isotope dilution analysis within the use of negative thermoionisation for determination of boron traces

    International Nuclear Information System (INIS)

    Zeininger, H.

    1984-01-01

    A mass spectrometric trace boron determination using negative thermionisation was developed. It is based on the determination of the ratio of BO 2 - isotopes ( 10 B and 11 B). A high stability and a constant intensity at a given temperature of the BO 2 - ion currents allow for a computer controlled measurement with a programmed heating. The reproducibility lies at around 0,004-0,08%. The boron determination using Mels potentiometry with a BF 4 - -ion selective electrode was used as an analytical comparison method. The MS-IDA was first used on metal samples, such as Al, Zr, and steel. Later on the boron in reagents, biological material (milk powder, spinach, water plants) and water were determined. For this material-dependent hydrolysation and separation procedures were worked out. The MS-IDA in comparison to all other analytical methods used by other collaborators offers the greatest accuracy. (RB) [de

  19. Insights into the Mechanisms Underlying Boron Homeostasis in Plants

    Directory of Open Access Journals (Sweden)

    Akira Yoshinari

    2017-11-01

    Full Text Available Boron is an essential element for plants but is toxic in excess. Therefore, plants must adapt to both limiting and excess boron conditions for normal growth. Boron transport in plants is primarily based on three transport mechanisms across the plasma membrane: passive diffusion of boric acid, facilitated diffusion of boric acid via channels, and export of borate anion via transporters. Under boron -limiting conditions, boric acid channels and borate exporters function in the uptake and translocation of boron to support growth of various plant species. In Arabidopsis thaliana, NIP5;1 and BOR1 are located in the plasma membrane and polarized toward soil and stele, respectively, in various root cells, for efficient transport of boron from the soil to the stele. Importantly, sufficient levels of boron induce downregulation of NIP5;1 and BOR1 through mRNA degradation and proteolysis through endocytosis, respectively. In addition, borate exporters, such as Arabidopsis BOR4 and barley Bot1, function in boron exclusion from tissues and cells under conditions of excess boron. Thus, plants actively regulate intracellular localization and abundance of transport proteins to maintain boron homeostasis. In this review, the physiological roles and regulatory mechanisms of intracellular localization and abundance of boron transport proteins are discussed.

  20. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    Camillo, M.A.P.; Tomac Junior, U.

    1990-01-01

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na 2 10 B 12 H 11 SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author) [pt

  1. A colorimetric determination of boron in biological sample for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Camilo, M.A.P.; Tomac Junior, U.

    1989-01-01

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of gliomas and glioblastomas grade III and IV than other therapies. During the treatment of levels of Na 2 10 B 12 H 11 S H must be known in several compartments of the organism and with this purpose the method of colorimetric determination of boron using curcumin was established. This method is simples, reproducible and has adequate sensitivity for this control. (author). 7 refs, 3 figs, 1 tab

  2. Boron uptake measurements in a rat model for Boron Neutron Capture Therapy of lung tumours

    Energy Technology Data Exchange (ETDEWEB)

    Bortolussi, S., E-mail: silva.bortolussi@pv.infn.i [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Bakeine, J.G. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Ballarini, F. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Bruschi, P. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Gadan, M.A. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Comision Nacional de Energia Atomica, Buenos Aires (Argentina); Protti, N.; Stella, S. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Clerici, A.; Ferrari, C.; Cansolino, L.; Zonta, C.; Zonta, A. [Department of Surgery, University of Pavia, via Ferrata 27100 Pavia (Italy); Nano, R. [Department of Animal Biology, University of Pavia, via Ferrata 27100 Pavia (Italy); Altieri, S. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy)

    2011-02-15

    Lung carcinoma is the leading cause of cancer mortality in the Western countries. Despite the introduction over the last few years of new therapeutic agents, survival from lung cancer has shown no discernible improvement in the last 20 years. For these reasons any efforts to find and validate new effective therapeutic procedures for lung cancer are very timely. The selective boron uptake in the tumour with respect to healthy tissues makes Boron Neutron Capture Therapy a potentially advantageous option in the treatment of tumours that affect whole vital organs, and that are surgically inoperable. To study the possibility of applying BNCT to the treatment of diffuse pulmonary tumours, an animal model for boron uptake measurements in lung metastases was developed. Both healthy and tumour-bearing rats were infused with Boronophenylalanine (BPA) and sacrificed at different time intervals after drug administration. The lungs were extracted, and prepared for boron analysis by neutron autoradiography and {alpha}-spectroscopy. The boron concentrations in tumour and normal lung were plotted as a function of the time elapsed after BPA administration. The concentration in tumour is almost constant within the error bars for all the time intervals of the experiment (1-8 h), while the curve in normal lung decreases after 4 h from BPA infusion. At 4 h, the ratio of boron concentration in tumour to boron concentration in healthy lung is higher than 3, and it stays above this level up to 8 h. Also the images of boron distribution in the samples, obtained by neutron autoradiography, show a selective absorption in the metastases.

  3. Nuclear magnetic resonance spectroscopy of boron compounds containing two-, three- and four-coordinate boron

    International Nuclear Information System (INIS)

    Wrackmeyer, B.

    1988-01-01

    The influence of boron chemistry on various areas of research in inorganic, organic and theoretical chemistry is well documented. In fact, many models presently employed to describe chemical bonding in general can be traced to attempts to understand bonding in boranes. The confirmation of many theoretical predictions in boron chemistry relies on direct and indirect structural information provided by various physical methods that - fortunately - became available almost at the same rate as that with which the interest in boron compounds was growing. Clearly, there has always been a strong link between the interest in synthesis and the application of physical methods. As in many other areas of chemistry, developments in boron chemistry have been greatly accelerated by NMR. 11 B NMR has been at the center of interest from the beginning, accompanied by routine 1 H NMR measurements, and occasional 14 N, 19 F and 31 P NMR work. In the last 12 years, we have seen an increasing number of 13 C NMR studies of boron compounds. The availability of multinuclear facilities for PFT NMR spectrometers stimulates the measurement of the NMR spectra of other nuclei, like 29 Si, 119 Sn or other metals, in order to obtain additional information. This paper is intended to serve several purposes: to update previous reviews on 11 B NMR of boron compounds, to demonstrate some applications of multinuclear NMR to boron chemistry; to attempt to incorporate new NMR parameters into the known data set; and to summarize the experimental facts required for obtaining the maximum information from NMR studies on boron compounds

  4. ICP-MS determination of boron: method optimization during preparation of graphite reference material for boron

    International Nuclear Information System (INIS)

    Granthali, S.K.; Shailaja, P.P.; Mainsha, V.; Venkatesh, K.; Kallola, K.S.; Sanjukta, A.K.

    2017-01-01

    Graphite finds widespread use in nuclear reactors as moderator, reflector, and fuel fabricating components because of its thermal stability and integrity. The manufacturing process consists of various mixing, moulding and baking operations followed by heat-treatment between 2500 °C and 3000 °C. The high temperature treatment is required to drive the amorphous carbon-to-graphite phase transformation. Since synthetic graphite is processed at high temperature, impurity concentrations in the precursor carbon get significantly reduced due to volatilization. However boron may might partly gets converted into boron carbide at high temperatures in the carbon environment of graphite and remains stable (B_4C: boiling point 3500 °C) in the matrix. Literature survey reveals the use of various methods for determination of boron. Previously we have developed a method for determination of boron in graphite electrodes using inductively coupled plasma mass spectrometry (ICP-MS). The method involves removal of graphite matrix by ignition of the sample at 800°C in presence of saturated barium hydroxide solution to prevent the loss of boron. Here we are reporting a modification in the method by using calcium carbonate in place of barium hydroxide and using beryllium (Be) as an internal standard, which resulted in a better precession. The method was validated by spike recovery experiments as well as using another technique viz. Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). The modified method was applied in evaluation of boron concentration in the graphite reference material prepared

  5. Boron exposure through drinking water during pregnancy and birth size.

    Science.gov (United States)

    Igra, Annachiara Malin; Harari, Florencia; Lu, Ying; Casimiro, Esperanza; Vahter, Marie

    2016-10-01

    Boron is a metalloid found at highly varying concentrations in soil and water. Experimental data indicate that boron is a developmental toxicant, but the few human toxicity data available concern mostly male reproduction. To evaluate potential effects of boron exposure through drinking water on pregnancy outcomes. In a mother-child cohort in northern Argentina (n=194), 1-3 samples of serum, whole blood and urine were collected per woman during pregnancy and analyzed for boron and other elements to which exposure occurred, using inductively coupled plasma mass spectrometry. Infant weight, length and head circumference were measured at birth. Drinking water boron ranged 377-10,929μg/L. The serum boron concentrations during pregnancy ranged 0.73-605μg/L (median 133μg/L) and correlated strongly with whole-blood and urinary boron, and, to a lesser extent, with water boron. In multivariable-adjusted linear spline regression analysis (non-linear association), we found that serum boron concentrations above 80μg/L were inversely associated with birth length (B-0.69cm, 95% CI -1.4; -0.024, p=0.043, per 100μg/L increase in serum boron). The impact of boron appeared stronger when we restricted the exposure to the third trimester, when the serum boron concentrations were the highest (0.73-447μg/L). An increase in serum boron of 100μg/L in the third trimester corresponded to 0.9cm shorter and 120g lighter newborns (p=0.001 and 0.021, respectively). Considering that elevated boron concentrations in drinking water are common in many areas of the world, although more screening is warranted, our novel findings warrant additional research on early-life exposure in other populations. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  6. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

  7. Boron-doped manganese dioxide for supercapacitors.

    Science.gov (United States)

    Chi, Hong Zhong; Li, Yuwei; Xin, Yingxu; Qin, Haiying

    2014-11-11

    The addition of boron as a dopant during the reaction between carbon fiber and permanganate led to significant enhancement of the growth-rate and formation of the porous framework. The doped MnO2 was superior to the pristine sample as electrode materials for supercapacitors in terms of the specific capacitance and rate capability.

  8. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  9. Anomalous Seebeck coefficient in boron carbides

    International Nuclear Information System (INIS)

    Aselage, T.L.; Emin, D.; Wood, C.; Mackinnon, I.D.R.; Howard, I.A.

    1987-01-01

    Boron carbides exhibit an anomalously large Seebeck coefficient with a temperature coefficient that is characteristic of polaronic hopping between inequivalent sites. The inequivalence in the sites is associated with disorder in the solid. The temperature dependence of the Seebeck coefficient for materials prepared by different techniques provides insight into the nature of the disorder

  10. NEW ADVANCES IN BORON SOIL CHEMISTRY - Paper

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  11. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  12. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  13. Joining of boron carbide using nickel interlayer

    International Nuclear Information System (INIS)

    Vosughi, A.; Hadian, A. M.

    2008-01-01

    Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300 d eg C a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250 d eg C . The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

  14. Influence of pollution of boron chlorinity ratio

    Digital Repository Service at National Institute of Oceanography (India)

    Narvekar, P.V.; Zingde, M.D.

    Presence of boron in domestic wastewater has resulted in high B/CI ratio at some locations in the coastal water around Bombay. A widest range (0.215-0.281) of B/CI was observed at a location with high influence of wastewater release. The mean B...

  15. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  16. Reaction of boron carbide with molybdenum disilicide

    International Nuclear Information System (INIS)

    Novikov, A.V.; Melekhin, V.F.; Pegov, V.S.

    1989-01-01

    The investigation results of interaction in the B 4 C-MoSi 2 system during sintering in vacuum are presented. Sintering of boron carbide with molybdenum disilicide is shown to lead to the formation of MoB 2 , SiC, Mo 5 Si 3 compounds, the presence of carbon-containing covering plays an important role in sintering

  17. Crystal structure of isomeric boron difluoride acetylnaphtholates

    International Nuclear Information System (INIS)

    Bukvetskij, B.V.; Fedorenko, E.V.; Mirochnik, A.G.; Karasev, V.E.

    2006-01-01

    Crystal structures of luminescent isomeric acetylnaphtholates of boron difluoride are investigated. Full X-ray structural analysis is done at 293 K. Coordinated of atoms, bond angles, bond lengths, interatomic distances are determined. Results of comparative evaluations of the isomers are represented [ru

  18. Radiobiology of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Bond, V.P.

    1986-01-01

    The author addresses the question of single session versus protracted therapy in the application of boron neutron therapy to tumors. As background he discusses the reasoning behind the current use of fractionated therapy with conventional low-LET radiations and difference which may obtain for neutron therapy. Several aspects of dose rates and dose levels are then addressed

  19. BCM6: New Generation of Boron Meter

    International Nuclear Information System (INIS)

    Pirat, P.

    2010-01-01

    Full text of publication follows: Rolls-Royce has developed a new generation of boron meter, based on more than 30 years of experience. The Rolls-Royce BCM6 boron meter provides Nuclear Power Plant (NPP) operators with the boron concentration of the primary circuit. The meter provides continuous and safe measurements with no manual sampling and no human contact. In this paper, technical features, advantages and customer benefits of the use of the new generation of Rolls-Royce BCM6 boron meter will be detailed. Values and associated alarms are provides over different media: 4-20 mA outputs, relays, displays in the main control room and in the chemical lab, and digital links. A special alarm avoids unexpected homogeneous dilution of the primary circuit, which is a critical operational parameter. The Rolls-Royce BCM6 boron meter is fully configurable over a set of parameters allowing adaptation to customer needs. It has a differential capability, thus eliminating neutronic noise and keeping measurements accurate, even in the case of fuel clad rupture. Measurements are accurate, reliable, and have a quick response time. Equipment meets state-of-the-art qualification requests. Designed in 2008, the BCM6 boron meter is the newest equipment of Rolls-Royce boron meters product line. It has been chosen to equip the French EPR NPP and complies with the state-of-the-art of the technology. Rolls-Royce has more than 30 years of experience in Instrumentation and Controls with more than 75 NPP units operating worldwide. All of this experience return has been put in this new generation of equipment to provide the customer with the best operation. About Rolls-Royce Rolls-Royce is a global business providing integrated power systems for use on land, at sea and in the air. The Group has a balanced business portfolio with leading market positions. Rolls-Royce has a broad range of civil nuclear expertise, including work related to licensing and safety reviews, engineering design

  20. Design of a boron neutron capture enhanced fast neutron therapy assembly

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhonglu [Georgia Inst. of Technology, Atlanta, GA (United States)

    2006-12-01

    The use of boron neutron capture to boost tumor dose in fast neutron therapy has been investigated at several fast neutron therapy centers worldwide. This treatment is termed boron neutron capture enhanced fast neutron therapy (BNCEFNT). It is a combination of boron neutron capture therapy (BNCT) and fast neutron therapy (FNT). It is believed that BNCEFNT may be useful in the treatment of some radioresistant brain tumors, such as glioblastoma multiform (GBM). A boron neutron capture enhanced fast neutron therapy assembly has been designed for the Fermilab Neutron Therapy Facility (NTF). This assembly uses a tungsten filter and collimator near the patient's head, with a graphite reflector surrounding the head to significantly increase the dose due to boron neutron capture reactions. The assembly was designed using Monte Carlo radiation transport code MCNP version 5 for a standard 20x20 cm2 treatment beam. The calculated boron dose enhancement at 5.7-cm depth in a water-filled head phantom in the assembly with a 5x5 cm2 collimation was 21.9% per 100-ppm 10B for a 5.0-cm tungsten filter and 29.8% for a 8.5-cm tungsten filter. The corresponding dose rate for the 5.0-cm and 8.5-cm thick filters were 0.221 and 0.127 Gy/min, respectively; about 48.5% and 27.9% of the dose rate of the standard 10x10 cm2 fast neutron treatment beam. To validate the design calculations, a simplified BNCEFNT assembly was built using four lead bricks to form a 5x5 cm2 collimator. Five 1.0-cm thick 20x20 cm2 tungsten plates were used to obtain different filter thicknesses and graphite bricks/blocks were used to form a reflector. Measurements of the dose enhancement of the simplified assembly in a water-filled head phantom were performed using a pair of tissue-equivalent ion chambers. One of the ion chambers is loaded with 1000-ppm natural boron (184-ppm 10B) to measure dose due to boron neutron capture. The

  1. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  2. Laser-induced photochemical enrichment of boron isotopes

    International Nuclear Information System (INIS)

    Freund, S.M.; Ritter, J.J.

    1976-01-01

    A boron trichloride starting material containing both boron-10 isotopes and boron-11 isotopes is selectively enriched in one or the other of these isotopes by a laser-induced photochemical method involving the reaction of laser-excited boron trichloride with either H 2 S or D 2 S. The method is carried out by subjecting a low pressure gaseous mixture of boron trichloride starting material and the sulfide to infrared radiation from a carbon dioxide TE laser. The wave length of the radiation is selected so as to selectively excite one or the other of boron-10 BCl 3 molecules or boron-11 BCl 3 molecules, thereby making them preferentially more reactive with the sulfide. The laser-induced reaction produces both a boron-containing solid phase reaction product and a gaseous phase containing mostly unreacted BCl 3 and small amounts of sulfhydroboranes. Pure boron trichloride selectively enriched in one of the isotopes is recovered as the primary product of the method from the gaseous phase by a multi-step recovery procedure. Pure boron trichloride enriched in the other isotope is recovered as a secondary product of the method by the subsequent chlorination of the solid phase reaction product followed by separation of BCl 3 from the mixture of gaseous products resulting from the chlorination

  3. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo; Li, Zhenyu; Sarp, Sarper; Park, Y. G.; Amy, Gary L.; Vrouwenvelder, Johannes S.

    2014-01-01

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  4. ISOBORDAT: An Online Data Base on Boron Isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Pennisi, M.; Adorni-Braccesi, A.; Andreani, D.; Gori, L.; Gonfiantini, R. [Istituto di Geoscienze e Georisorse, CNR, Pisa (Italy); Sciuto, P. F. [Servizio Geologico, Sismico e dei Suoli, D.G. Ambiente e Difesa del Suolo e della Costa, Regione Emilia Romagna, Bologna (Italy)

    2013-07-15

    From 1986, boron isotope data in natural substances increased sharply in scientific publications. Analytical difficulties derived from complex geochemical matrices have been faced and interlaboratory calibrations reported in the boron literature. Boron isotopes are nowdays applied to investigate boron origin and migration in natural waters, sources of boron contamination, water-rock interactions and also contribute to water resource management. This is especially important in those areas where boron content exceeds the local regulations for drinking water supply and boron sources need to be identified. ISOBORDAT, an interactive database on boron isotope composition and content in natural waters is presented to the wider community of boron isotope users. The database's structure, scope and applications are reported, along with a discussion on {delta}{sup 11}B values obtained in Italian waters. In the database boron data are structured in the following categories: rainwater, rivers, lakes, groundwater and potential contaminants. New categories (medium and high enthalpy fluids from volcanic and geothermal areas) are anticipated. ISOBORDAT aims to be as interactive as possible and will be developed taking into account information and suggestions received. The database is continually undergoing revision to keep pace with continuous data publication. Indications of data that are missing at present are greatly appreciated. (author)

  5. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  6. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  7. The Boron Isotopic Composition of Elephant Dung: Inputs to the Global Boron Budget

    Science.gov (United States)

    Williams, L. B.; Hervig, R. L.

    2011-12-01

    A survey of boron in kerogen showed isotopically light δ11B values (0 to -50%) that are distinctly different from most mineral and natural water B reservoirs. Diagenesis releases this isotopically light B into pore fluids when hydrocarbons are generated, thus enriching oilfield brines in 10B. This observation suggests that borated biomolecules (BM) are primarily tetrahedral favoring 10B, whereas 11B is preferred in trigonal coordination. Plants, with optimal concentrations up to 100ppm, contribute more B than animal remains to sediment. Elephants are one of the largest herbivores on earth, consuming 200 - 250 kg of plant material/day and producing 50 kg of manure/day. They are inefficient at digestion, thus the manure contains >50% undigested plant material. Dung samples are therefore ideal for studying the δ11B of both the food input and digested output of a significant B supply to sedimentary systems. Horse and rabbit manure were studied for comparison to evaluate B isotope variations in the food supply and potential vital effects on the output. B-content and isotopic composition of dung plant material and digested fractions were measured in the solid state by secondary ion mass spectrometry. The digests were rinsed in 1.8% mannitol, a B-complexing agent, to remove surface adsorbed-B, then air dried and Au-coated for charge compensation. Results showed that the elephant diet contains 3-13 ppm B, with an average δ11B of -20 ± 0.8% (1σ), while rabbit food had 88 ppm B with a δ11B of -50 ± 1.3 %. The digested fraction of the elephant dung contains 4-10ppm B with average δ11B values of -12 ± 1.2%. In comparison, horse manure with 11-21 ppm B has a δ11B of -10.7 ± 0.5% and rabbit manure contains 2-3 ppm B with a δ11B of -8.8 ± 1%. Boron isotope compositions of these manures are indistinguishable (within error). Clearly plant material is a major contributor of isotopically light B to sediments. The herbivores studied fractionate their total B intake in

  8. Chromatographic separation process with pellicular ion exchange resins that can be used for ion or isotope separation and resins used in this process

    International Nuclear Information System (INIS)

    Carles, M.; Neige, R.; Niemann, C.; Michel, A.; Bert, M.; Bodrero, S.; Guyot, A.

    1989-01-01

    For separation of uranium, boron or nitrogen isotopes, an isotopic exchange is carried out betwen an isotope fixed on an ion exchange resin and another isotope of the same element in the liquid phase contacting the resin. Pellicular resins are used comprising composite particulates with an inert polymeric core and a surface layer with ion exchange groups [fr

  9. Hardness and wear properties of boron-implanted poly(ether-ether-ketone) and poly-ether-imide

    International Nuclear Information System (INIS)

    Lee Youngchul; Lee, E.H.; Mansur, L.K.

    1992-01-01

    The effects of boron beam irradiation on the hardness, friction, and wear of polymer surfaces were investigated. Typical high-performance thermoplastics, poly(ether-ether-ketone) (PEEK) and a poly-ether-imide (Ultem) were studied after 200 keV boron ion beam treatment at ambient temperature to doses of 2.3x10 14 , 6.8x10 14 , and 2.2x10 15 ions cm -2 . The hardnesses of pristine and boron-implanted materials were characterized by a conventional Knoop method and a load-depth sensing nanoindentation technique. Both measurements showed a significant increase in hardness with increasing dose. The increase in hardness was also found to depend on the penetration depth of the diamond indenter. Wear and friction properties were characterized by a reciprocating sliding friction tester with an SAE 52100 high-carbon, chrome steel ball at 0.5 and 1 N normal loads. Wear and frictional properties varied in a complex fashion with polymer type and dose, but not much with normal load. A substantial reduction in friction coefficient was observed for PEEK at the highest dose but no reduction was observed for Ultem. The wear damage was substantially reduced at the highest dose for both Ultem and PEEK. For the system studied, the highest dose, 2.2x10 15 ions cm -2 , appears to be optimum in improving wear resistance for both PEEK and Ultem. (orig.)

  10. Analytical study on the determination of boron in environmental water samples

    International Nuclear Information System (INIS)

    Lopez, F.J.; Gimenez, E.; Hernandez, F.

    1993-01-01

    An analytical study on the determination of boron in environmental water samples was carried out. The curcumin and carmine standard methods were compared with the most recent Azomethine-H method in order to evaluate their analytical characteristics and feasibility for the analysis of boron in water samples. Analyses of synthetic water, ground water, sea water and waste water samples were carried out and a statistical evaluation of the results was made. The Azomethine-H method was found to be the most sensitive (detection limit 0.02 mg l -1 ) and selective (no interference of commonly occurring ions in water was observed), showing also the best precision (relative standard deviation lower than 4%). Moreover, it gave good results for all types of samples analyzed. The accuracy of this method was tested by the addition of known amounts of standard solutions to different types of water samples. The slopes of standard additions and direct calibration graphs were similar and recoveries of added boron ranged from 99 to 107%. (orig.)

  11. Experimental study of asymmetric boron dilution at VVER-1000 of Kudankulam NPP and its simulation

    Energy Technology Data Exchange (ETDEWEB)

    Tsyganov, Sergey V.; Kotsarev, Alexander V.; Baykov, Alexander V. [National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation)

    2017-09-15

    The Kudankulam NPP units contain additional and unique for VVER Quick Boron Injection System (QBIS) for beyond-design-basis accident management without scram. During the physical start-up stage at hot zero power of both Kudankulam units, special tests were performed to assess the efficiency of the system. In the course of test three out of four QBIS tanks had been promptly opened and it led to the asymmetrical injection of boric acid into the core. The scenario of the tests may address to the inhomogeneous boron dilution process that is now an essential part of safety analysis of pressurised water reactors. The simulation of the process, including ex-core ion chambers readings, has been accomplished using ATHLET/BIPR-VVER code. Behaviour of some reactor parameters in the course of the test and some results of the simulation are discussing in the paper. Authors believe the process of the asymmetrical injection of boric acid may be useful for verification and validation of coupled neutronic and thermo-hydraulic codes widely used for safety analysis, including analysis of boron dilution accident.

  12. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    International Nuclear Information System (INIS)

    Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

  13. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

    2002-11-11

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

  14. Boron-Based Catalysts for C-C Bond-Formation Reactions.

    Science.gov (United States)

    Rao, Bin; Kinjo, Rei

    2018-05-02

    Because the construction of the C-C bond is one of the most significant reactions in organic chemistry, the development of an efficient strategy has attracted much attention throughout the synthetic community. Among various protocols to form C-C bonds, organoboron compounds are not just limited to stoichiometric reagents, but have also made great achievements as catalysts because of the easy modification of the electronic and steric impacts on the boron center. This review presents recent developments of boron-based catalysts applied in the field of C-C bond-formation reactions, which are classified into four kinds on the basis of the type of boron catalyst: 1) highly Lewis acidic borane, B(C 6 F 5 ) 3 ; 2) organoboron acids, RB(OH) 2 , and their ester derivatives; 3) borenium ions, (R 2 BL)X; and 4) other miscellaneous kinds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Online detection of radiation produced in Boron-10 neutron capture reaction: preliminary studies

    International Nuclear Information System (INIS)

    Portu, A.; Galván, V.; González, S.J.; Thorp, S.; Santa Cruz, G.; Saint Martin, G.; Blostein, J.J.

    2013-01-01

    Boron microdistribution in both tumor and normal tissue sections can be studied by the autoradiography technique in solid state nuclear track detectors (SSNTD). A measurement of boron concentration in tissue is obtained through the evaluation of the density of tracks produced by alpha and lithium ions generated in the neutron capture reaction 10B(n,α) 7 Li. This knowledge is pivotal when a BNCT (Boron Neutron Capture Therapy) protocol is considered. A new methodology is proposed in order to record alpha and lithium events in real time, as light spots superimposed to the tissue section image. CCD (Charge-Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) are used as detectors, with the advantage of avoiding the superposition of events. Commercial web cams were employed for the preliminary experiments. They were partially disassembled in order to get the sensor chip uncovered. These devices were exposed to different radiation sources: 6.118 MeV alpha particles (252Cf), 0.662 MeV gamma rays ( 137 Cs) and thermal neutrons (moderated 241 Am-Be source, 103n.cm2.seg-1), to analyze the characteristics of the respective images. Pictures from tissue sections put in contact with the sensor surface were also acquired. A software was developed in Matlab to perform the image capture and processing. Early results show the feasibility of using these devices to study the distribution 10B in tissue samples. (author)

  16. Boron autoradiography method applied to the study of steels

    International Nuclear Information System (INIS)

    Gugelmeier, R.; Barcelo, G.N.; Boado, J.H.; Fernandez, C.

    1986-01-01

    The boron state, contained in the steel microestructure, is determined. The autoradiography by neutrons is used, permiting to obtain boron distribution images by means of additional information which is difficult to acquire by other methods. The application of the method is described, based on the neutronic irradiation of a polished steel sample, over which a celulose nitrate sheet or other appropriate material is fixed to constitute the detector. The particles generated by the neutron-boron interaction affect the detector sheet, which is subsequently revealed with a chemical treatment and can be observed at the optical microscope. In the case of materials used for the construction of nuclear reactors, special attention must be given to the presence of boron, since owing to the exceptionaly high capacity of neutron absorption, lowest quantities of boron acquire importance. The adaption of the method to metallurgical problems allows the obtainment of a correlation between the boron distribution images and the material's microstructure. (M.E.L.) [es

  17. Evolution of anisotropy in bcc Fe distorted by interstitial boron

    Science.gov (United States)

    Gölden, Dominik; Zhang, Hongbin; Radulov, Iliya; Dirba, Imants; Komissinskiy, Philipp; Hildebrandt, Erwin; Alff, Lambert

    2018-01-01

    The evolution of magnetic anisotropy in bcc Fe as a function of interstitial boron atoms was investigated in thin films grown by molecular beam epitaxy. The thermodynamic nonequilibrium conditions during film growth allowed one to stabilize an interstitial boron content of about 14 at .% accompanied by lattice tetragonalization. The c /a ratio scaled linearly with the boron content up to a maximum value of 1.05 at 300 °C substrate growth temperature, with a room-temperature magnetization of. In contrast to nitrogen interstitials, the magnetic easy axis remained in-plane with an anisotropy of approximately -5.1 ×106erg /cm3 . Density functional theory calculations using the measured lattice parameters confirm this value and show that boron local ordering indeed favors in-plane magnetization. Given the increased temperature stability of boron interstitials as compared to nitrogen interstitials, this study will help to find possible ways to manipulate boron interstitials into a more favorable local order.

  18. Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

    International Nuclear Information System (INIS)

    Patel, R.B.; Chou, T.; Iqbal, Z.

    2014-01-01

    The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  19. Influence of dopants, particularly carbon, on β-rhombohedral boron

    Science.gov (United States)

    Werheit, H.; Flachbart, K.; Pristáš, G.; Lotnyk, D.; Filipov, V.; Kuhlmann, U.; Shitsevalova, N.; Lundström, T.

    2017-09-01

    Due to the high affinity of carbon to boron, the preparation of carbon-free boron is problematic. Even high-purity (6 N) β-rhombohedral boron contains 30-60 ppm of C. Hence, carbon affects the boron physical properties published so far more or less significantly. We studied well-defined carbon-doped boron samples based on pure starting material carefully annealed with up to about 1% C, thus assuring homogeneity. We present and discuss their electrical conductivity, optical absorption, luminescence and phonon spectra. Earlier attempts of other authors to determine the conductivity of C-doped boron are revised. Our results allow estimating the effects of oxygen and iron doping on the electrical conductivity using results taken from literature. Discontinuities at low T impair the electronic properties.

  20. Pulverization of boron element and proportions of boron carbide in boron; Broyage de bore element et dosage de carbure de bore dans le bore

    Energy Technology Data Exchange (ETDEWEB)

    Lang, F M; Finck, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1956-07-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 {mu}. Grain sizes smaller than 1{mu} are required for applying thin layers of such boron. (author) [French] Il est possible de pulveriser finement du bore element au moyen de mortier et pilon en carbure de bore fritte, le taux de carbure de bore introduit etant inferieur a 1 pour cent. Le bore element dont nous disposons est constitue de petits grains brun fonce, a aretes vives, de dimension moyenne superieure a 5 {mu}. L'application de ce bore en couches minces demande des grains de dimensions inferieures a 1 {mu}. (aute0008.

  1. Comparison of methods for the determination of boron in heavy water moderator

    Energy Technology Data Exchange (ETDEWEB)

    Green, L.W.; Davey, E.C.; Gulens, J.; Longhurst, T.H.; Mislan, J.P. (Atomic Energy of Canada Ltd., Chalk River, Ontario. Chalk River Nuclear Labs.)

    1984-08-01

    Five analysis methods were compared for the determination of boron in heavy water moderator: isotope dilution mass spectrometry, spectrophotometry, neutron activation, inductively coupled plasma -atomic emission spectrometry, and ion selective electrode potentiometry. Ten samples were analysed by each method; the results showed close agreement between all of the methods. Only mass spectrometry achieved the required precision (<1 percent rsd) for samples taken during initial reactor operation, but all of the methods achieved sufficient precision (<10 percent rsd) for samples taken during normal operation. For samples for which the /sup 10/B concentration must be determined, only mass spectrometry and neutron activation are applicable.

  2. Polymerisation occurrence in the anodic oxidation of phosphite on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Petrucci, Elisabetta; Montanaro, Daniele; Merli, Carlo

    2008-01-01

    The electrogeneration of polymeric phosphorus compounds during the anodic oxidation of aqueous solutions of phosphites on a boron-doped diamond electrode has been studied. Although the main oxidation product is orthophosphate, the results indicate the simultaneous generation of short-chain and cyclic compounds containing two and three phosphorus atoms whose evolution has been followed by ion chromatography. The effect on the reaction yield of several operative parameters such as current density, pH, temperature and initial phosphite concentration has been investigated. Consistently with the data presented, a new process for the generation of polymeric phosphates is obtained

  3. Characterization of boron doped nanocrystalline diamonds

    International Nuclear Information System (INIS)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

    2008-01-01

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

  4. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  5. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  6. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  7. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  8. Boron nitride encapsulated graphene infrared emitters

    International Nuclear Information System (INIS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-01-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  9. Boron nitride encapsulated graphene infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

    2016-03-28

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  10. The spectrophotometric determination of boron in tourmalines

    Directory of Open Access Journals (Sweden)

    LJILJANA JAKSIC

    2005-02-01

    Full Text Available A procedure for the spectrophotometric determination of macro amounts of boron in tourmaline with azomethine H is described. The used tourmaline concentrate was obtained by magnetic separation and heavy-liquids purification of the schorl zone of pegmatite or granite aplite. The samples of tourmaline were decomposed by fusion with anhydrous sodium carbonate and taken up in dilute hydrochloric acid. The interfering effects of iron and aluminium were eliminated by masking with an EDTA – NTA solution. After pH adjustment, the boron was reacted with azomethine H and the absorbance of the obtained coloured complex was measured at 415 nm. The results are compared with those obtained by other procedures. The relative error of the determination was less than 3 %.

  11. Determination of microdistribution of boron in metals

    Energy Technology Data Exchange (ETDEWEB)

    Illic, R; Najzer, M; Rant, J [J. Stefan Institute, Ljubljana (Yugoslavia)

    1976-07-01

    A neutron induced autoradiographic technique was used for the determination of the boron microdistribution in metals. The specimens, which were in close contact with a LR 115 SSTD, were irradiated in the exposure room of the TRIGA Mark II reactor in Ljubljana. The spatial resolution of the autoradiographic image recorded by the LR 115 detector was found to be influenced mainly by the size of the reaction product tracks. The track diameter of a normally etched detector was about 7 {mu}m. An appreciable reduction of track size was achieved by pre-etching the detector foil before neutron irradiation. By this procedure it was possible to obtain a track diameter as small as 1 {mu}m and correspondingly to improve the spatial resolution of the autoradiographs of type EC 80 steel and Al Mg 3 alloy which contain 30 and 2 ppm of boron respectively. (author)

  12. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    Ferreira, T.H.; Sousa, E.M.B.

    2010-01-01

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  13. Grain refinement of cast titanium alloys via trace boron addition

    International Nuclear Information System (INIS)

    Tamirisakandala, S.; Bhat, R.B.; Tiley, J.S.; Miracle, D.B.

    2005-01-01

    The grain size of as-cast Ti-6Al-4V is reduced by about an order of magnitude from 1700 to 200 μm with an addition of 0.1 wt.% boron. A much weaker dependence of reduction in grain size is obtained for boron additions from >0.1% to 1.0%. Similar trends were observed in boron-modified as-cast Ti-6Al-2Sn-4Zr-2Mo-0.1Si

  14. On melting of boron phosphide under pressure

    OpenAIRE

    Solozhenko, Vladimir; Mukhanov, V. A.

    2015-01-01

    Melting of cubic boron phosphide, BP, has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve exhibits negative slope (–60 ± 7 K/GPa), which is indicative of a higher density of the melt as compared to the solid phase.

  15. High resolution imaging of boron carbide microstructures

    International Nuclear Information System (INIS)

    MacKinnon, I.D.R.; Aselage, T.; Van Deusen, S.B.

    1986-01-01

    Two samples of boron carbide have been examined using high resolution transmission electron microscopy (HRTEM). A hot-pressed B 13 C 2 sample shows a high density of variable width twins normal to (10*1). Subtle shifts or offsets of lattice fringes along the twin plane and normal to approx.(10*5) were also observed. A B 4 C powder showed little evidence of stacking disorder in crystalline regions

  16. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes

    Data.gov (United States)

    National Aeronautics and Space Administration — Conduct a systematic computational study on the physical and electro-mechanical properties of Boron Nitride Nanotubes (BNNTs) to evaluate their functional...

  17. Combustion Performance of a Staged Hybrid Rocket with Boron addition

    Science.gov (United States)

    Lee, D.; Lee, C.

    2018-04-01

    In this paper, the effect of boron on overall system specific impulse was investigated. Additionally, a series of combustion tests was carried out to analyze and evaluate the effect of boron addition on O/F variation and radial temperature profiles. To maintain the hybrid rocket engine advantages, upper limit of boron contents in solid fuel was set to be 10 wt%. The results also suggested that, when adding boron to solid fuel, it helped to provide more uniform radial temperature distribution and also to increase specific impulse by 3.2%.

  18. Deuterated-decaborane using boronization on JT-60U

    Energy Technology Data Exchange (ETDEWEB)

    Yagyu, Jun-ichi; Arai, Takashi; Kaminaga, Atsushi; Miyata, Katsuyuki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Arai, Masaru [Kaihatsu Denki Co., Ltd., Tokyo (Japan)

    2001-03-01

    In JT-60U, boronization using hydride-decaborane (B{sub 10}H{sub 14}) vaporization has been conducted for the first wall conditioning. Compared to other discharge cleaning (DC), boronization is claimed to be efficient in reduction of oxygen impurities and hydrogen recycling in plasma. However, there are some problems in reduction of hydrogen included in boron film and stabilization of DC glow discharge during the boronization. To solve these problems, a new boronization method using deuterated-decaborane (B{sub 10}D{sub 14}) was adopted instead of the conventional hydride-decaborane. As a result, hydrogen content in the boron film decreased clearly and discharge conditioning shots, for decreasing hydrogen content in plasmas, after the boronization were reduced to 1/10 in comparison to the conventional process. Furthermore, DC glow discharge became stable, with only helium carrier gas, and it was possible to save 30 hours in maximum of the time necessary to boronization. It is shown that the boronization using deuterated-decaborane is very efficient and effective method for the first wall conditioning. (author)

  19. Graphite and boron carbide composites made by hot-pressing

    International Nuclear Information System (INIS)

    Miyazaki, K.; Hagio, T.; Kobayashi, K.

    1981-01-01

    Composites consisting of graphite and boron carbide were made by hot-pressing mixed powders of coke carbon and boron carbide. The change of relative density, mechanical strength and electrical resistivity of the composites and the X-ray parameters of coke carbon were investigated with increase of boron carbide content and hot-pressing temperature. From these experiments, it was found that boron carbide powder has a remarkable effect on sintering and graphitization of coke carbon powder above the hot-pressing temperature of 2000 0 C. At 2200 0 C, electrical resistivity of the composite and d(002) spacing of coke carbon once showed minimum values at about 5 to 10 wt% boron carbide and then increased. The strength of the composite increased with increase of boron carbide content. It was considered that some boron from boron carbide began to diffuse substitutionally into the graphite structure above 2000 0 C and densification and graphitization were promoted with the diffusion of boron. Improvements could be made to the mechanical strength, density, oxidation resistance and manufacturing methods by comparing with the properties and processes of conventional graphites. (author)

  20. Dependence of boron cluster dissolution on the annealing ambient

    International Nuclear Information System (INIS)

    Radic, Ljubo; Lilak, Aaron D.; Law, Mark E.

    2002-01-01

    Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process

  1. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Faria Gaspar, P. de.

    1994-01-01

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  2. Advances in boronization on NSTX-Upgrade

    Directory of Open Access Journals (Sweden)

    C. H Skinner

    2017-08-01

    Full Text Available Boronization has been effective in reducing plasma impurities and enabling access to higher density, higher confinement plasmas in many magnetic fusion devices. The National Spherical Torus eXperiment, NSTX, has recently undergone a major upgrade to NSTX-U in order to develop the physics basis for a ST-based Fusion Nuclear Science Facility (FNSF with capability for double the toroidal field, plasma current, and NBI heating power and increased pulse duration from 1–1.5s to 5–8s. A new deuterated tri-methyl boron conditioning system was implemented together with a novel surface analysis diagnostic. We report on the spatial distribution of the boron deposition versus discharge pressure, gas injection and electrode location. The oxygen concentration of the plasma facing surface was measured by in-vacuo XPS and increased both with plasma exposure and with exposure to trace residual gases. This increase correlated with the rise of oxygen emission from the plasma.

  3. Stable boron nitride diamondoids as nanoscale materials

    International Nuclear Information System (INIS)

    Fyta, Maria

    2014-01-01

    We predict the stability of diamondoids made up of boron and nitrogen instead of carbon atoms. The results are based on quantum-mechanical calculations within density functional theory (DFT) and show some very distinct features compared to the regular carbon-based diamondoids. These features are evaluated with respect to the energetics and electronic properties of the boron nitride diamondoids as compared to the respective properties of the carbon-based diamondoids. We find that BN-diamondoids are overall more stable than their respective C-diamondoid counterparts. The electronic band-gaps (E g ) of the former are overall lower than those for the latter nanostructures but do not show a very distinct trend with their size. Contrary to the lower C-diamondoids, the BN-diamondoids are semiconducting and show a depletion of charge on the nitrogen site. Their differences in the distribution of the molecular orbitals, compared to their carbon-based counterparts, offer additional bonding and functionalization possibilities. These tiny BN-based nanostructures could potentially be used as nanobuilding blocks complementing or substituting the C-diamondoids, based on the desired properties. An experimental realization of boron nitride diamondoids remains to show their feasibility. (paper)

  4. A study of the boron profiles caused by BF2 implantation in crystalline silicon

    International Nuclear Information System (INIS)

    Jung, Won-Chae

    2005-01-01

    For integrated CMOS circuits, the one-, two-, and three-dimensional impurity distributions are very important for analyzing the devices. The one-dimensional boron profiles were measured by using secondary ion mass spectroscopy (SIMS), and simulation data were obtained by using the TSUPREM4 and the UT-Marlowe programs. The simulated data of UT-Marlowe in 1D agreed very well with the SIMS data. From the SIMS and the simulated 1D data, the four moments were calculated, these 1D data were used in the TSUPREM4 simulator to calculate of 2D profiles. For the TSUPREM4 simulations, several different models were used for the characterization of the 1D and the 2D boron profiles. A Taurus simulation tool was used to obtain the 3D boron profiles for the case of arbitrary tilting and rotation. The measured two-dimensional cross-sectional transmission electron microscope (XTEM) data obtained by using the chemical etching method matched very well with the results of the Gauss model. The vertical depths from the Gauss model and from the XTEM data were 125.8 nm and 125 nm, respectively. The channel lengths from the Gauss model and from the XTEM data were 205 nm and 233 nm, respectively. From the XTEM data and the Gauss model, the deviations of the vertical and the lateral doping distributions were 0.6 % and 12 %, respectively. The detection limit of boron measured by using the chemical-etching method was shown to be a concentration of about 1.0 X 10 16 cm -3 for a PMOS device.

  5. A critical assessment of boron target compounds for boron neutron capture therapy.

    Science.gov (United States)

    Hawthorne, M Frederick; Lee, Mark W

    2003-01-01

    Boron neutron capture therapy (BNCT) has undergone dramatic developments since its inception by Locher in 1936 and the development of nuclear energy during World War II. The ensuing Cold War spawned the entirely new field of polyhedral borane chemistry, rapid advances in nuclear reactor technology and a corresponding increase in the number to reactors potentially available for BNCT. This effort has been largely oriented toward the eradication of glioblastoma multiforme (GBM) and melanoma with reduced interest in other types of malignancies. The design and synthesis of boron-10 target compounds needed for BNCT was not channeled to those types of compounds specifically required for GBM or melanoma. Consequently, a number of potentially useful boron agents are known which have not been biologically evaluated beyond a cursory examination and only three boron-10 enriched target species are approved for human use following their Investigational New Drug classification by the US Food and Drug Administration; BSH, BPA and GB-10. All ongoing clinical trials with GBM and melanoma are necessarily conducted with one of these three species and most often with BPA. The further development of BNCT is presently stalled by the absence of strong support for advanced compound evaluation and compound discovery driven by recent advances in biology and chemistry. A rigorous demonstration of BNCT efficacy surpassing that of currently available protocols has yet to be achieved. This article discusses the past history of compound development, contemporary problems such as compound classification and those problems which impede future advances. The latter include means for biological evaluation of new (and existing) boron target candidates at all stages of their development and the large-scale synthesis of boron target species for clinical trials and beyond. The future of BNCT is bright if latitude is given to the choice of clinical disease to be treated and if a recognized study

  6. Determination of isotopic composition of boron in boron carbide by TIMS and PIGE: an inter-comparison study

    International Nuclear Information System (INIS)

    Sasibhushan, K.; Rao, R.M.; Parab, A.R.; Alamelu, D.; Aggarwal, S.K.; Acharya, R.; Chhillar, S.; Pujari, P.K.

    2015-01-01

    The paper reports a comparison of results on the determination of isotopic composition of boron in boron carbide (B 4 C) samples by Thermal Ionisation Mass Spectrometry (TIMS) and Particle Induced Gamma ray Spectrometry (PIGE). B 4 C samples having varying boron isotopic composition (natural, enriched with respect to 10 B) and their synthetic mixtures) have been analysed by both the techniques. The 10 B atom% was found to be in the range of 20-67%. (author)

  7. Boron neutron capture therapy. Synthesis of boronated amines- and DNA intercalating agents for potential use in cancer therapy

    International Nuclear Information System (INIS)

    Ghaneolhosseini, H.

    1998-01-01

    Boron Neutron Capture Therapy is a binary cancer treatment modality, involving the delivery of a suitable boron compound to tumour cells followed by irradiation of the tumour by thermal neutrons. Boronated agents can selectively be delivered to tumour cells either directly with tumour-specific boron compounds, or by use of targeting strategies. However, the efficacy of this method would increase if the boron agents are localised in the cell nucleus rather than in the cell cytoplasm when neutron irradiation takes place. With these considerations in mind, some boronated DNA intercalating/interacting agents such as phenanthridine- acridine- spermidine- and naphthalimide derivatives were synthesised. Aminoalkyl-o-carboranes were synthesised in order to be used both for coupling to macromolecules and also for halogenation of their corresponding nido-derivatives. The amino groups were introduced using the Gabriel reagent N, N-dibenzyl iminodicarboxylate to provide 1-(aminomethyl)- and 1-(2-aminoethyl)-o-carboranes. The first attempt to achieve the possibility to accumulate a higher concentration of boron atoms in the cell nucleus was to synthesize carboranyl phenanthridinium analogues by reacting a p- or o-carboranyl moiety with phenanthridine, a chromophore with a planar aromatic ring system as DNA intercalator. Boronated acridine-spermidine, boronated diacridine, and boronated dispermidine were obtained in order to increase water solubility to avoid the interaction of these agents with non-DNA sides of the cell, especially membranes; and to enhance the feasibility of a higher DNA-binding constant and also decrease the DNA-drug dissociation rate. Finally, the synthesis of a boronated naphthalimide derivative was carried out by nucleophilic reaction of a primary aminoalkyl-p-carborane with naphthalic anhydride. Biological evaluations on DNA-binding, toxicity, and cellular binding with carboranyl phenanthridinium analogues, boronated acridine- and spermidine are described

  8. Effect of elemental composition of ion beam on the phase formation and surface strengthening of structural materials

    International Nuclear Information System (INIS)

    Avdienko, K.I.; Avdienko, A.A.; Kovalenko, I.A.

    2001-01-01

    The investigation results are reported on the influence of ion beam element composition on phase formation, wear resistance and microhardness of surface layers of titanium alloys VT-4 and VT-16 as well as stainless steel 12Kh18N10T implanted with nitrogen, oxygen and boron. It is stated that ion implantation into structural materials results in surface hardening and is directly dependent on element composition of implanted ion beam. The presence of oxygen in boron or nitrogen ion beams prevents the formation of boride and nitride phases thus decreasing a hardening effect [ru

  9. Determination of boron in graphite, boron carbide and glass by ICP-MS, ICP-OES and conventional wet chemical methods

    International Nuclear Information System (INIS)

    Venkatesh, K.; Kamble, Granthali S.; Venkatesh, Manisha; Kumar, Sanjukta A.; Reddy, A.V.R.

    2014-01-01

    Boron is an important element of interest in nuclear reactor materials due to its high neutron absorption cross section (σ 0 =3837 barns for 10 B). In the present paper, R and D work and routinely used methods have been described for the analysis of case samples (1) Graphite where boron is present at trace levels, (2) Boron Carbide having boron concentration of about 80% and (3) Glass containing 4-6 % boron. (author)

  10. Surface microhardening by ion implantation

    International Nuclear Information System (INIS)

    Singh, Amarjit

    1986-01-01

    The paper discusses the process and the underlying mechanism of surface microhardening by implanting suitable energetic ions in materials like 4145 steel, 304 stainless steel, aluminium and its 2024-T351 alloy. It has been observed that boron and nitrogen implantation in materials like 4145 steel and 304 stainless steel can produce a significant increase in surface hardness. Moreover the increase can be further enhanced with suitable overlay coatings such as aluminium (Al), Titanium (Ti) and carbon (C). The surface hardening due to implantation is attributed to precipitation hardening or the formation of stable/metastable phase or both. The effect of lithium implantation in aluminium and its alloy on microhardness with increasing ion dose and ion beam energy is also discussed. (author)

  11. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    Vega C, H.R.

    2002-01-01

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  12. Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

    Science.gov (United States)

    Carroll, M. S.; Chang, C.-L.; Sturm, J. C.; Büyüklimanli, T.

    1998-12-01

    In this letter, we show the ability, through introduction of a thin Si1-x-yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si1-x-yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion (OED) and transient-enhanced diffusion (TED) dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels.

  13. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

    Science.gov (United States)

    Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  14. Development of an 18 GHz superconducting electron cyclotron resonance ion source at RCNP.

    Science.gov (United States)

    Yorita, Tetsuhiko; Hatanaka, Kichiji; Fukuda, Mitsuhiro; Kibayashi, Mitsuru; Morinobu, Shunpei; Okamura, Hiroyuki; Tamii, Atsushi

    2008-02-01

    An 18 GHz superconducting electron cyclotron resonance ion source has recently been developed and installed in order to extend the variety and the intensity of ions at the RCNP coupled cyclotron facility. Production of several ions such as O, N, Ar, Kr, etc., is now under development and some of them have already been used for user experiments. For example, highly charged heavy ion beams like (86)Kr(21+,23+) and intense (16)O(5+,6+) and (15)N(6+) ion beams have been provided for experiments. The metal ion from volatile compounds method for boron ions has been developed as well.

  15. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration.

  16. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    International Nuclear Information System (INIS)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon

    2014-01-01

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration

  17. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  18. Current status of accelerator-based boron neutron capture therapy

    International Nuclear Information System (INIS)

    Kreiner, A. J.; Bergueiro, J.; Di Paolo, H.; Castell, W.; Vento, V. Thatar; Cartelli, D.; Kesque, J.M.; Valda, A.A.; Ilardo, J.C.; Baldo, M.; Erhardt, J.; Debray, M.E.; Somacal, H.R.; Estrada, L.; Sandin, J.C. Suarez; Igarzabal, M.; Huck, H.; Padulo, J.; Minsky, D.M.

    2011-01-01

    The direct use of proton and heavy ion beams for radiotherapy is a well established cancer treatment modality, which is becoming increasingly widespread due to its clear advantages over conventional photon-based treatments. This strategy is suitable when the tumor is spatially well localized. Also the use of neutrons has a long tradition. Here Boron Neutron Capture Therapy (BNCT) stands out, though on a much smaller scale, being a second-generation promising alternative for tumors which are diffuse and infiltrating. On this sector, so far only nuclear reactors have been used as neutron sources. In this paper we describe the current situation worldwide as far as the use of accelerator-based neutron sources for BNCT is concerned (so-called Accelerator-Based (AB)-BNCT). In particular we discuss the present status of an ongoing project to develop a folded Tandem-ElectroStatic-Quadrupole (TESQ) accelerator at the Atomic Energy Commission of Argentina. The project goal is a machine capable of delivering 30 mA of 2.4 MeV protons to be used in conjunction with a neutron production target based on the 7 Li(p,n) 7 Be reaction. These are the specifications needed to produce sufficiently intense and clean epithermal neutron beams to perform BNCT for deep-seated tumors in less than an hour. (author)

  19. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  20. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  1. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  2. Boron-enhanced diffusion in excimer laser annealed Si

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Privitera, V.; Fortunato, G.; Mariucci, L.

    2004-01-01

    The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm -2 forming a distribution with a width of 20-30 nm and a peak concentration of ∼5 x 10 21 cm -3 . It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm -3 ) exceeding the solid solubility level. RTA (30 s at 1100 deg. C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10 20 cm -3 ). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed

  3. High pressure synthesis and investigations of properties of boron allotropes and boron carbide

    International Nuclear Information System (INIS)

    Chuvashova, Irina

    2017-01-01

    This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B 13 C 2 up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B 12 icosahedra volumes of the stoichiometric boron carbide B 13 C 2 as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B 13 C 2 with that of α-B and γ-B allotropes and B 4 C showed that it is determined by the types of bonding involved in the course of compression.

  4. From boron analogues of amino acids to boronated DNA: potential new pharmaceuticals and neutron capture agents

    International Nuclear Information System (INIS)

    Spielvogel, B.F.; Sood, Anup; Duke Univ., Durham, NC; Shaw, B.R.; Hall, I.H.

    1991-01-01

    Isoelectronic and isostructural boron analogues of the α-amino acids ranging from simple glycine analogues such as H 3 NBH 2 COOH and Me 2 NHBH 2 COOH to alanine analogues have been synthesised. A diverse variety of analogues, including precursors and derivatives (such as peptides) have potent pharmacological activity, including anticancer, antiinflammatory, analgesic, and hypolipidemic activity in animal model studies and in vitro cell cultures. Boronated nucleosides and (oligo)nucleotides, synthetic oligonucleotide analogues of ''antisense'' agents interact with a complementary nucleic acid sequence blocking the biological effect of the target sequence. Nucleosides boronated on the pyrimidine and purine bases have been prepared. It has been established that an entirely new class of nucleic acid derivatives is feasible in which one of the non-bridging oxygens in the internucleotide phosphodiester linkage can be replaced by an isoelectronic analogue, the borane group, (BH 3 ). The boronated oligonucleotides can be viewed as hybrids of the normal oxygen oligonucleotides and the methylphosphonate oligonucleotides. (author)

  5. Investigation of Hard Boron Rich Solids: Osmium Diboride and β-Rhombohedral Boron

    Science.gov (United States)

    Hebbache, M.; Živković, D.

    Recently, we succeeded in synthesizing three osmium borides, i.e., OsB1.1, Os2B3 and OsB2. Up to date, almost nothing is known about the physical properties of these materials. Microhardness measurements show that OsB2 is extremely hard. Ab initio calculations show that it is due to formation of covalent bonds between boron atoms. OsB2 is also a low compressibility material. It can be used for hard coatings. The β-rhombohedral polymorph of boron is the second hardest elemental crystal (H ≈ 33 GPa). It is also very light and a p-type semiconductor. In early 1970s, it has been shown that the doping of boron with 3d transition elements enhances its hardness by about 25%. We predict that, in general, heavily doped samples MBx, with x ≤ 31 or equivalently a dopant concentration larger than 3.2 at.%, should be ultrahard, i.e., H > 43 GPa. The relevant dopants M are Al, Cu, Sc, Mn, Mg and Li. In addition to these properties, boron-rich materials have a very low volatility, a high chemical inertness and high melting point. They are suitable for applications under extreme conditions and thermoelectric equipment.

  6. Boron distribution and the effect of lime on boron uptake by pansy, petunia, and gerbera plants

    Science.gov (United States)

    Reports of boron (B) deficiency have become more prevalent in pansy (Viola ×wittrockiana), petunia (Petunia ×hybrida), and gerbera (Gerbera jamesonii) plug production. When symptoms are observed in production the presence and severity of symptoms have no pattern, symptomatic plants can be located a...

  7. High pressure synthesis and investigations of properties of boron allotropes and boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Chuvashova, Irina

    2017-06-12

    This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B{sub 13}C{sub 2} up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B{sub 12} icosahedra volumes of the stoichiometric boron carbide B{sub 13}C{sub 2} as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B{sub 13}C{sub 2} with that of α-B and γ-B allotropes and B{sub 4}C showed that it is determined by the types of bonding involved in the course of compression.

  8. Dynamic response of multiwall boron nitride nanotubes subjected to ...

    Indian Academy of Sciences (India)

    Page 1 ... 1. Introduction. Boron nitride nanotubes (BNNTs) are like carbon nanotubes. (CNTs) in structure in which carbon atoms are replaced by alternate boron and nitrogen atoms. Thus, BNNTs demon- ... istic analyser for intermediate landing situation of inserted mass.15 Also, a macroscopic continuum simulation is sug-.

  9. Highly thermal conductive carbon fiber/boron carbide composite material

    International Nuclear Information System (INIS)

    Chiba, Akio; Suzuki, Yasutaka; Goto, Sumitaka; Saito, Yukio; Jinbo, Ryutaro; Ogiwara, Norio; Saido, Masahiro.

    1996-01-01

    In a composite member for use in walls of a thermonuclear reactor, if carbon fibers and boron carbide are mixed, since they are brought into contact with each other directly, boron is reacted with the carbon fibers to form boron carbide to lower thermal conductivity of the carbon fibers. Then, in the present invention, graphite or amorphous carbon is filled between the carbon fibers to provide a fiber bundle of not less than 500 carbon fibers. Further, the surface of the fiber bundle is coated with graphite or amorphous carbon to suppress diffusion or solid solubilization of boron to carbon fibers or reaction of them. Then, lowering of thermal conductivity of the carbon fibers is prevented, as well as the mixing amount of the carbon fiber bundles with boron carbide, a sintering temperature and orientation of carbon fiber bundles are optimized to provide a highly thermal conductive carbon fiber/boron carbide composite material. In addition, carbide or boride type short fibers, spherical graphite, and amorphous carbon are mixed in the boron carbide to prevent development of cracks. Diffusion or solid solubilization of boron to carbon fibers is reduced or reaction of them if the carbon fibers are bundled. (N.H.)

  10. Eleventh international conference on boron chemistry. Programme and abstracts

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-07-01

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports.

  11. Feasibility study of SMART core with soluble boron

    International Nuclear Information System (INIS)

    Kim, Kang Seog; Lee, Chung Chan; Zee, Sung Quun

    2000-11-01

    The excess reactivity of SMART core without soluble boron is effectively controlled by 49 CEDM. We suggest another method to control the core excess reactivity using both the checkerboard type of 25 CEDM and soluble boron and perform a feasibility calculation. The soluble boron operation is categorized into the on-line and the off-line mechanisms. The former is to successively control the boron concentration according to the excess reactivity during operation and the latter is to add and change some soluble boron during refueling and repairing. Since the on-line soluble boron control system of SMART is conceptually identical to that of the commercial pressurized water reactor, we did not perform the analysis. Since the soluble boron in the complete off-line system increases the moderator temperature coefficient, the reactivity defect between hot and cold moderator temperature is decreased. However, the decrease of the reactivity is not big to satisfy the core reactivity limits. When using 25 CEDM, the possible mechanism is to control the excess reactivity by both control rod and on-line boron control mechanism between cold and hot zero power and by only control rod at hot full power. We selected the loading pattern satisfying the requirement in the view of nuclear design

  12. Mass spectrometric investigation of vinyl-substituted organic boron compounds

    International Nuclear Information System (INIS)

    Tarielashvili, V.O.; Ordzhonikidze, K.G.; Parulava, L.P.; Vakhaniya, G.V.

    1992-01-01

    Mass spectrometric investigation of vinyl-substituted organic compounds was conducted. Ionization was performed by electron shock. Possibility of determining boron isotope content is all analyzed organic boron vinyl-substituted compounds by direct method is shown. This simplifies sufficiently and lowers the price of analysis, improves its accuracy and rapidity

  13. Determination of free and combined carbon in boron carbide

    International Nuclear Information System (INIS)

    Shankaran, P.S.; Kulkarni, Amit S.; Pandey, K.L.; Ramanjaneyulu, P.S.; Yadav, C.S.; Sayi, Y.S.; Ramakumar, K.L.

    2009-01-01

    A simple, sensitive and fast method for the determination of free and combined carbon in boron carbide samples, based on combustion in presence of oxygen at different temperatures, has been developed. Method has been standardized by analyzing mixture of two different boron carbide samples. Error associated with the method in the determination of free carbon is less than 5%. (author)

  14. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  15. The investigation of parameters affecting boron removal by electrocoagulation method

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Keskinler, Buelent

    2005-01-01

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm 2 . The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl 2 . Added CaCl 2 increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions

  16. Effect of boron on growth criteria of some wheat cultivars

    Directory of Open Access Journals (Sweden)

    Ashraf Metwally

    2012-01-01

    Full Text Available Introduction: Toxic soil concentrations of the essential micronutrient boron (B represent major limitations to crop production worldwide. Plants have a range of defense systems that might be involved in their affinity to resist and tolerate nutrients stress.Materials and methods: The experiments were carried out to study the differential responses in five wheat cultivars to boron toxicity. Results: The fresh and dry matter yield of the test wheat cultivars showed marked decrease as the concentration of boron was increased. Elevated concentration of boron had a notable inhibitory effect on the biosynthesis of pigments fractions in the test wheat cultivars as severely as dry matter gain. The adverse concentration effects of boron on some metabolic responses were clearly displayed by shoot and root systems, exhibited in the elevated rates of proline, hydrogen peroxide and malondialdehyde formation. Potassium leakage was severely affected by boron-stress in some cultivars at all tested concentrations, while in some others a moderate damage was manifested only at the higher boron concentrations.Conclusions: Sakha 93 out of all the different cultivars investigated was found to display the lowest sensitivity to boron-stress, while Gemmeza 9 was the most sensitive one.

  17. New applications of the interaction between diols and boronic acids

    NARCIS (Netherlands)

    Duval, F.L.

    2015-01-01

    Florine Duval - New applications of the interaction between diols and boronic acids – Summary

    Chapter 1 introduces the theory and known applications of the interaction between boronic acids and diols, and explains the context of this thesis. Diagnosis of

  18. Contamination of urban garden soils with copper and boron

    Energy Technology Data Exchange (ETDEWEB)

    Purves, D

    1966-06-04

    Spectrochemical analyses of garden soils sampled in the Edinburgh and Dundee areas indicate that there is substantial contamination of urban soils with copper and boron. These soils were analyzed spectrochemically with respect to total copper and water-extractable boron content with the view of comparing the levels obtained in urban areas with levels in arable soils in rural areas. The results indicate that urban garden soils contain about four times as much copper and two to three times as much water-soluble boron as rural arable soils. The existence of such a marked disparity between the levels of two potentially toxic elements in urban and rural areas is evidence of slow poisoning of the soil environment in built-up areas and is cause for concern. While the major source of contamination of soils with copper and boron is still a matter for speculation, it is probable that the addition of soot to garden soils and the fall-out of sooty material in built-up areas where atmospheric pollution is a problem make a substantial contribution to the water-extractable boron content of urban soils. Three samples of soot from domestic chimneys, obtained from independent sources, were found on analysis to contain 640, 650 and 555 p.p.m. water-extractable boron, and it is evident that the addition to soil of even small amounts of soot with a boron content of this order would have a marked effect on its water-extractable boron content.

  19. Preparation of boron-nitrogen films by sputtering

    International Nuclear Information System (INIS)

    Klose, S.; Winde, B.

    1980-01-01

    Hard boron-nitrogen films adherent to various substrates can be prepared by sputtering. IR investigations suggest the existence of cubic boron nitride in certain layers. Transmission electron microscope studies have shown a quasi-amorphous structure irregularly incorporating crystallites of zinc blende structure of some nm in diameter

  20. Production of boron carbide powder by carbothermal synthesis of ...

    Indian Academy of Sciences (India)

    TECS

    weight armour plates etc (Alizadeh et al 2004). It can also be used as a reinforcing material for ceramic matrix composites. It is an excellent neutron absorption material in nuclear industry due to its high neutron absorption co- efficient (Sinha et al 2002). Boron carbide can be prepared by reaction of elemental boron and ...

  1. Eleventh international conference on boron chemistry. Programme and abstracts

    International Nuclear Information System (INIS)

    2002-01-01

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports [ru

  2. Boron Diffusion in Surface-Treated Framing Lumber

    Science.gov (United States)

    Patricia K. Lebow; Stan T. Lebow; Steven A. Halverson

    2013-01-01

    The extent of boron penetration in framing lumber treated by spray applications during construction is not well quantified. This study evaluated the effect of formulation and concentration on diffusion of boron in lumber specimens that were equilibrated in conditions that produced wood moisture contents of 18 to 21 percent. One set of specimens was pressure treated...

  3. Design, Fabrication and Performance of Boron-Carbide Control Elements

    International Nuclear Information System (INIS)

    Brammer, H.A.; Jacobson, J.

    1964-01-01

    A control blade design, incorporating boron-carbide (B 4 C) in stainless-steel tubes, was introduced into service in boiling water reactors in April 1961. Since that time this blade has become the standard reference control element in General Electric boiling-water reactors, replacing the 2% boron-stainless-steel blades previously used. The blades consist of a sheathed, cruciform array of small vertical stainless-steel tubes filled with compácted boron-carbide powder. The boron-carbide powder is confined longitudinally into several independent compartments by swaging over ball bearings located inside the tubes. The development and use of boron-carbide control rods is discussed in five phases: 1. Summary of experience with boron-steel blades and reasons for transition to boron-carbide control; 2. Design of the boron-carbide blade, beginning with developmental experiments, including early measurements performed in the AEC ''Control Rod Material and Development Program'' at the Vallecitos Atomic Laboratory, through a description of the final control blade configuration; 3. Fabrication of the blades and quality control procedures; 4. Results of confirmatory pre-operational mechanical and reactivity testing; and 5. Post-operational experience with the blades, including information on the results of mechanical inspection and reactivity testing after two years of reactor service. (author) [fr

  4. Ion-ion collisions

    International Nuclear Information System (INIS)

    Salzborn, Erhard; Melchert, Frank

    2000-01-01

    Collisions between ions belong to the elementary processes occurring in all types of plasmas. In this article we give a short overview about collisions involving one-electron systems. For collisions involving multiply-charged ions we limit the discussion to one specific quasi-one-electron system. (author)

  5. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  6. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu

    2014-06-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  7. Boron-based nanostructures: Synthesis, functionalization, and characterization

    Science.gov (United States)

    Bedasso, Eyrusalam Kifyalew

    Boron-based nanostructures have not been explored in detail; however, these structures have the potential to revolutionize many fields including electronics and biomedicine. The research discussed in this dissertation focuses on synthesis, functionalization, and characterization of boron-based zero-dimensional nanostructures (core/shell and nanoparticles) and one-dimensional nanostructures (nanorods). The first project investigates the synthesis and functionalization of boron-based core/shell nanoparticles. Two boron-containing core/shell nanoparticles, namely boron/iron oxide and boron/silica, were synthesized. Initially, boron nanoparticles with a diameter between 10-100 nm were prepared by decomposition of nido-decaborane (B10H14) followed by formation of a core/shell structure. The core/shell structures were prepared using the appropriate precursor, iron source and silica source, for the shell in the presence of boron nanoparticles. The formation of core/shell nanostructures was confirmed using high resolution TEM. Then, the core/shell nanoparticles underwent a surface modification. Boron/iron oxide core/shell nanoparticles were functionalized with oleic acid, citric acid, amine-terminated polyethylene glycol, folic acid, and dopamine, and boron/silica core/shell nanoparticles were modified with 3-(amino propyl) triethoxy silane, 3-(2-aminoethyleamino)propyltrimethoxysilane), citric acid, folic acid, amine-terminated polyethylene glycol, and O-(2-Carboxyethyl)polyethylene glycol. A UV-Vis and ATR-FTIR analysis established the success of surface modification. The cytotoxicity of water-soluble core/shell nanoparticles was studied in triple negative breast cancer cell line MDA-MB-231 and the result showed the compounds are not toxic. The second project highlights optimization of reaction conditions for the synthesis of boron nanorods. This synthesis, done via reduction of boron oxide with molten lithium, was studied to produce boron nanorods without any

  8. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  9. Fracture toughness of borides formed on boronized ductile iron

    International Nuclear Information System (INIS)

    Sen, Ugur; Sen, Saduman; Koksal, Sakip; Yilmaz, Fevzi

    2005-01-01

    In this study, fracture toughness properties of boronized ductile iron were investigated. Boronizing was realized in a salt bath consisting of borax, boric acid and ferro-silicon. Boronizing heat treatment was carried out between 850 and 950 deg. C under the atmospheric pressure for 2-8 h. Borides e.g. FeB, Fe 2 B formed on ductile iron was verified by X-ray diffraction (XRD) analysis, SEM and optical microscope. Experimental results revealed that longer boronizing time resulted in thicker boride layers. Optical microscope cross-sectional observation of borided layers showed dentricular morphology. Both microhardness and fracture toughness of borided surfaces were measured via Vickers indenter. The harnesses of borides formed on the ductile iron were in the range of 1160-2140 HV 0.1 and fracture toughness were in the range of 2.19-4.47 MPa m 1/2 depending on boronizing time and temperature

  10. An overview the boron dilution issue in PWRs

    International Nuclear Information System (INIS)

    Hyvaerinen, J.

    1994-01-01

    The presentation is an overview of boron (boric acid) dilution in pressurized water reactors (PWRs). Boric acid has been widely used in PWRs as a dissolved poison, as one of the main reactivity controlling means, for a long time, from nearly but not quite from the beginning of the design, construction and operation of PWRs in the present-day sense. The specific safety issue, namely the risk of uncontrolled reactivity insertion due to inadvertent boron dilution, is discussed first, followed by a brief look on the history of boron usage in PWRs. A discussion of boron dilution phenomenology is presented next in general terms. Some particular concerns that boron dilution phenomena arouse in the minds of a regulator will also be presented before concluding with a brief look on the future of dissolved poisons. (11 refs.)

  11. Morphological and electrochemical studies of spherical boron doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Mendes de Barros, R.C. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil); Ferreira, N.G. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Azevedo, A.F. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Corat, E.J. [LAS/INPE, Av. dos Astronautas, 1758, Jardim da Granja, Sao Jose dos Campos/SP, 12245-970 (Brazil); Sumodjo, P.T.A. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil); Serrano, S.H.P. [IQ/USP, Av. Lineu Prestes, 748, Bloco 2 Superior, Cidade Universitaria, Sao Paulo/SP, 05508-900 (Brazil)]. E-mail: shps@iq.usp.br

    2006-08-14

    Morphological and electrochemical characteristics of boron doped diamond electrode in new geometric shape are presented. The main purpose of this study is a comparison among voltammetric behavior of planar glassy carbon electrode (GCE), planar boron doped diamond electrode (PDDE) and spherical boron doped diamond electrode (SDDE), obtained from similar experimental parameters. SDDE was obtained by the growth of boron doped film on textured molybdenum tip. This electrode does not present microelectrode characteristics. However, its voltammetric peak current, determined at low scan rates, is largest associated to the smallest {delta}E {sub p} values for ferrocyanide system when compared with PDDE or GCE. In addition, the capacitance is about 200 times smaller than that for GCE. These results show that the analytical performance of boron doped diamond electrodes can be implemented just by the change of sensor geometry, from plane to spherical shape.

  12. Boron effect on stainless steel plasticity under hot deformation

    International Nuclear Information System (INIS)

    Bulat, S.I.; Kardonov, B.A.; Sorokina, N.A.

    1978-01-01

    The effect of boron on plasticity of stainless steels at temperatures of hot deformation has been studied at three levels of alloying, i.e. 0-0.01% (micro-alloying or modifying), 0.01-0.02% (low alloying) and 0.02-2.0% (high alloying). Introduction of 0.001-0.005% of boron increases hot plasticity of both low and high carbon stainless steels due to decrease in grain size and strengthening of grain boundaries. Microalloying by boron has a positive effect at temperatures below 1200-1220 deg C. At higher temperatures, particularly when its content exceeds 0.008%, boron deteriorates plasticity by increasing the size of grains and weakening their boundaries. 0.1-2% boron strengthen the stainless steel and dectease its plasticity

  13. Impact of Boron pollution to Biota Marine aquatic

    International Nuclear Information System (INIS)

    Heni Susiati; Yarianto-SBS; Imam Hamzah; Fepriadi

    2003-01-01

    Power plants and industrial facilities can release potentially harmful chemicals, like boron through direct aqueous discharges or cycling of cooling water to aquatic ecosystems environmental at plant surrounding. Boron is an essential trace element for the growth of marine biota, but can be toxic in excessive amount. Therefore will adversely affect of growth, reproduction or survival. Toxicity to aquatic organism, including vertebrates, invertebrates and plants can vary depending on the organism's life stage and environment. It is recommended that the maximum concentration of total boron for the protection of marine aquatic life should not exceed 1,2 mg B/L. Early stages of life cycle are more sensitive to boron than later ones, and the use of reconstituted water shows higher toxicity in lower boron concentrations than natural waters. (author)

  14. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  15. Boron determination in tourmaline by neutron induced radiography

    Energy Technology Data Exchange (ETDEWEB)

    Qureshi, A.A. E-mail: aaqureshi@pinstech.org.pk; Akram, M.; Ayub Khan, M.; Khattak, N.U.; Qureshi, I.E.; Khan, H.A

    2001-06-01

    The technique of neutron induced radiography has been applied to determine the boron concentration and its spatial distribution in mineral tourmaline collected from Swat Tourmaline Granite, Northern Pakistan. The technique involves the simultaneous irradiation of sample and a standard fixed on a track detector with thermal neutrons and the counting of alpha and {sup 7}Li tracks produced in the detector from the nuclear reaction {sup 10}B(n,{alpha}){sup 7}Li. Boron concentration is determined by comparing the {sup 7}Li and alpha particle tracks density with that of a standard of known boron concentration. Boron concentration in tourmaline has been found to be (3.40{+-}0.01)% in this study which is on the upper side within the normal range (2.5-3.8)% reported in the world. The presence of somewhat higher concentration of boron in tourmaline indicates that the Swat Tourmaline Granite was generated as a late stage hydrothermal activity during the Himalayan Orogeny.

  16. Evaluation of processes controlling the geochemical constituents in deep groundwater in Bangladesh: Spatial variability on arsenic and boron enrichment

    International Nuclear Information System (INIS)

    Halim, M.A.; Majumder, R.K.; Nessa, S.A.; Hiroshiro, Y.; Sasaki, K.; Saha, B.B.; Saepuloh, A.; Jinno, K.

    2010-01-01

    Forty-six deep groundwater samples from highly arsenic affected areas in Bangladesh were analyzed in order to evaluate the processes controlling geochemical constituents in the deep aquifer system. Spatial trends of solutes, geochemical modeling and principal component analysis indicate that carbonate dissolution, silicate weathering and ion exchange control the major-ion chemistry. The groundwater is dominantly of Na-Cl type brackish water. Approximately 17% of the examined groundwaters exhibit As concentrations higher than the maximum acceptable limit of 10 μg/L for drinking water. Strong correlation (R 2 = 0.67) of Fe with dissolved organic carbon (DOC) and positive saturation index of siderite suggests that the reductive dissolution of Fe-oxyhydroxide in presence of organic matter is considered to be the dominant process to release high content of Fe (median 0.31 mg/L) in the deep aquifer. In contrast, As is not correlated with Fe and DOC. Boron concentration in the 26% samples exceeds the standard limit of 500 μg/L, for water intended for human consumption. Negative relationships of B/Cl ratio with Cl and boron with Na/Ca ratio demonstrate the boron in deep groundwater is accompanied by brackish water and cation exchange within the clayey sediments.

  17. Numerical simulation of boron injection in a BWR

    Energy Technology Data Exchange (ETDEWEB)

    Tinoco, Hernan, E-mail: htb@forsmark.vattenfall.s [Forsmarks Kraftgrupp AB, SE-742 03 Osthammar (Sweden); Buchwald, Przemyslaw [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Frid, Wiktor, E-mail: wiktor@reactor.sci.kth.s [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

    2010-02-15

    The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of

  18. Numerical simulation of boron injection in a BWR

    International Nuclear Information System (INIS)

    Tinoco, Hernan; Buchwald, Przemyslaw; Frid, Wiktor

    2010-01-01

    The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of several

  19. Fabrication of cone-shaped boron doped diamond and gold nanoelectrodes for AFM-SECM

    Energy Technology Data Exchange (ETDEWEB)

    Avdic, A; Lugstein, A; Bertagnolli, E [Solid State Electronics Institute, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Wu, M; Gollas, B [Competence Centre for Electrochemical Surface Technology, Viktor Kaplan Strasse 2, 2700 Wiener Neustadt (Austria); Pobelov, I; Wandlowski, T [Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern (Switzerland); Leonhardt, K; Denuault, G, E-mail: alois.lugstein@tuwien.ac.at [School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom)

    2011-04-08

    We demonstrate a reliable microfabrication process for a combined atomic force microscopy (AFM) and scanning electrochemical microscopy (SECM) measurement tool. Integrated cone-shaped sensors with boron doped diamond (BDD) or gold (Au) electrodes were fabricated from commercially available AFM probes. The sensor formation process is based on mature semiconductor processing techniques, including focused ion beam (FIB) machining, and highly selective reactive ion etching (RIE). The fabrication approach preserves the geometry of the original AFM tips resulting in well reproducible nanoscaled sensors. The feasibility and functionality of the fully featured tips are demonstrated by cyclic voltammetry, showing good agreement between the measured and calculated currents of the cone-shaped AFM-SECM electrodes.

  20. Packing C60 in Boron Nitride Nanotubes

    Science.gov (United States)

    Mickelson, W.; Aloni, S.; Han, Wei-Qiang; Cumings, John; Zettl, A.

    2003-04-01

    We have created insulated C60 nanowire by packing C60 molecules into the interior of insulating boron nitride nanotubes (BNNTs). For small-diameter BNNTs, the wire consists of a linear chain of C60 molecules. With increasing BNNT inner diameter, unusual C60 stacking configurations are obtained (including helical, hollow core, and incommensurate) that are unknown for bulk or thin-film forms of C60. C60 in BNNTs thus presents a model system for studying the properties of dimensionally constrained ``silo'' crystal structures. For the linear-chain case, we have fused the C60 molecules to form a single-walled carbon nanotube inside the insulating BNNT.

  1. Stability analysis of zigzag boron nitride nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Hari Mohan, E-mail: rai.2208@gmail.com; Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R. [Indian Institute of Technology, Indore –452017 (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM- Indian Institute of Information Technology, Design and Manufacturing, Jabalpur – 482005 (India); Srivastava, Pankaj [Computational Nanoscience and Technology Lab. (CNTL), ABV- Indian Institute of Information Technology and Management, Gwalior – 474015 (India)

    2015-05-15

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  2. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  3. Synthesis of boron-containing heterocyclic compounds

    International Nuclear Information System (INIS)

    Azev, Yuri; Slepukhina, Irina; Gabel, Detlef

    2004-01-01

    The synthesis of boron-containing 1,3,5-triazines and 1,2,4-triazines is described. Derivatives of 1,3,5-triazine containing the o-carborane cluster have been obtained by reacting the corresponding propargyl derivatives with B 10 H 14 . Derivatives of 1,2,4-triazine containing the B 12 H 12 2- cluster have been obtained by nucleophilic substitution of ethylsulfone derivatives with B 12 H 11 SH 2- . They have been isolated in their ring-protonated form. Reaction of RNH 2 -B 8 H 11 NH-R with stericly demanding heterocycles failed, either for steric or for solubility reasons

  4. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Lee, Mark W.; Shelly, Kenneth; Kane, Robert R.; Hawthorne, M. Frederick

    2006-01-01

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  5. Meeting the challenge of homogenous boron targeting of heterogeneous tumors for effective boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    Heber, Elisa M.; Trivillin, Veronica A.; Itoiz, Maria E.; Rebagliati, J. Raul; Batistoni, Daniel; Kreimann, Erica L.; Schwint, Amanda E.; Nigg, David W.; Gonzalez, Beatriz N.

    2006-01-01

    BNCT is a tumor cell targeted radiation therapy. Inadequately boron targeted tumor populations jeopardize tumor control. Meeting the to date unresolved challenge of homogeneous targeting of heterogeneous tumors with effective boron carriers would contribute to therapeutic efficacy. The aim of the present study was to evaluate the degree of variation in boron content delivered by boronophenylalanine (BPA), GB-10 (Na 2 10 B 10 H 10 ) and the combined administration of (BPA+GB-10) in different portions of tumor, precancerous tissue around tumor and normal pouch tissue in the hamster cheek pouch oral cancer model. Boron content was evaluated by ICP-AES. The degree of homogeneity in boron targeting was assessed in terms of the coefficient of variation ([S.D./Mean]x100) of boron values. Statistical analysis of the results was performed by one-way ANOVA and the least significant difference test. GB-10 and GB-10 plus BPA achieved respectively a statistically significant 1.8-fold and 3.3-fold increase in targeting homogeneity over BPA. The combined boron compound administration protocol contributes to homogeneous targeting of heterogeneous tumors and would increase therapeutic efficacy of BNCT by exposing all tumor populations to neutron capture reactions in boron. (author)

  6. The Aggregation of Boron on the Tissues of Gold Fish (Carassius auratus Linnaeus, 1758

    Directory of Open Access Journals (Sweden)

    Tuncer Okan Genç

    2015-03-01

    Full Text Available In this study, it was aimed to determine the water-borne and food-borne boron accumulation in the liver and muscle tissues of Gold Fish (Carassius auratus Linnaeus, 1758. For each treatment, 12 individuals were. The water-borne boron treatments were applied as boron acid concentration of 1 mg/L, 10 mg/L and 20 mg/L in the aquarium water, while the food-borne boron treatments were prepared food contained the defined levels of boron (1 mg/kg, 5 mg/kg and 10 mg/kg as boric acid. The boron levels in the tissues were determined by an ICP-MS procedure. The maximum boron concentration was found in the 20mg/L water borne boron treatment in the liver tissue (1.78±0.02 mg/kg. In the water-borne boron treatments, the maximum Transfer Factor (TF was found in the 20mg/L boron concentration, and TF values were increased when the boron concentrations were decreasing. In the 1 mg/kg food-borne boron treatment, TF was found as 0, and increasing concentration of boron in the food caused an increase in TF reached about 0.06. This study suggested that the target organ for boron accumulation is the liver rather than the muscles and the accumulation of food-borne boron is lower when comparing water-borne boron.

  7. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    International Nuclear Information System (INIS)

    Rámila, Consuelo d.P.; Contreras, Samuel A.; Di Domenico, Camila; Molina-Montenegro, Marco A.; Vega, Andrea; Handford, Michael; Bonilla, Carlos A.

    2016-01-01

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  8. Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

    NARCIS (Netherlands)

    Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

    2012-01-01

    The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

  9. Study of the boron distribution in pea and alfalfa plants using SSNTD

    International Nuclear Information System (INIS)

    Li Jianming; Inst. for Application of Atomic Energy)" data-affiliation=" (Chinese Academy of Agricultural Sciences, Beijing, BJ (China)> Inst. for Application of Atomic Energy)" >Deng Hongmin

    1988-01-01

    The distribution of boron in pea (Pisum sativum L.) and alfalfa (Medicago sativa L.) was determined by using SSNTD. The results show that boron concentrations in leaves are highest, furthermore boron concentrations of the base leaves are higher than those of the top leaves. Among flower tissues, calyx has the highest boron concentration

  10. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    Energy Technology Data Exchange (ETDEWEB)

    Rámila, Consuelo d.P. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Contreras, Samuel A.; Di Domenico, Camila [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Molina-Montenegro, Marco A. [Centro de Estudios Avanzados en Zonas Áridas (CEAZA), Facultad de Ciencias del Mar, Universidad Católica del Norte, Larrondo 1281, Coquimbo (Chile); Instituto de Ciencias Biológicas, Universidad de Talca, Avda. Lircay s/n, Talca (Chile); Vega, Andrea [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Handford, Michael [Departmento de Biología, Facultad de Ciencias, Universidad de Chile, Avenida Las Palmeras 3425, 7800024 Santiago (Chile); Bonilla, Carlos A. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Centro de Desarrollo Urbano Sustentable (CEDEUS), Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); and others

    2016-11-05

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  11. Effect of the reinforced boron carbide particulate content of AA6061 alloy on formation of the passive film in seawater

    International Nuclear Information System (INIS)

    Katkar, V.A.; Gunasekaran, G.; Rao, A.G.; Koli, P.M.

    2011-01-01

    Highlights: → Presence of boron carbide increases the corrosion rate of A6061 alloy in seawater. → Increasing the B 4 C content decreases passive layer thickness. → Passive films formed on A6061 and its B 4 C composites are n-type semiconductors. - Abstract: The effect of boron carbide (B 4 C) reinforcement on the corrosion of AA6061 alloy was studied by investigating passive films formed in seawater. The higher passive current and its potential-dependence for these composites indicated formation of porous passive film. Electrochemical impedance spectroscopy (EIS) graph suggests that the alloy surface is partly or totally active. The formed passive film is n-type semiconductor junction in nature. The difference between corrosion potential (E corr ) and potential at zero charge (PZC) suggests that the chloride ions responsible for film breakdown exist within the passive film. A suitable mechanism is proposed for the passive film breakdown.

  12. Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

    International Nuclear Information System (INIS)

    Pal, Debdas; Hoag, David; Barter, Margaret

    2012-01-01

    Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)

  13. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  14. An aluminium evaporation source for ion plating

    International Nuclear Information System (INIS)

    Walley, P.A.; Cross, K.B.

    1977-01-01

    Ion plating with aluminium is becoming increasingly accepted as a method of anti-corrosion surface passivation, the usual requirements being for a layer between 12 and 50 microns in thickness, (0.0005 to 0.002). The evaporation system described here offers a number of advantages over high power electron beam sources when used for aluminium ion plating. The source consists of a resistively heated, specially shaped, boron nitride-titanium diboride boat and a metering feed system. Its main features are small physical size, soft vacuum compatibility, low power consumption and metered evaporation output. (author)

  15. β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

    2013-05-08

    In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

  16. Drug delivery system design and development for boron neutron capture therapy on cancer treatment

    International Nuclear Information System (INIS)

    Sherlock Huang, Lin-Chiang; Hsieh, Wen-Yuan; Chen, Jiun-Yu; Huang, Su-Chin; Chen, Jen-Kun; Hsu, Ming-Hua

    2014-01-01

    We have already synthesized a boron-containing polymeric micellar drug delivery system for boron neutron capture therapy (BNCT). The synthesized diblock copolymer, boron-terminated copolymers (Bpin-PLA-PEOz), consisted of biodegradable poly(D,L-lactide) (PLA) block and water-soluble polyelectrolyte poly(2-ethyl-2-oxazoline) (PEOz) block, and a cap of pinacol boronate ester (Bpin). In this study, we have demonstrated that synthesized Bpin-PLA-PEOz micelle has great potential to be boron drug delivery system with preliminary evaluation of biocompatibility and boron content. - Highlights: • Herein, we have synthesized boron-modified diblock copolymer. • Bpin-PLA-PEOz, which will be served as new boron containing vehicle for transporting the boron drug. • This boron containing Bpin-PLA-PEOz micelle was low toxicity can be applied to drug delivery

  17. Method for fabricating boron carbide articles

    International Nuclear Information System (INIS)

    Ardary, Z.; Reynolds, C.

    1980-01-01

    Described is a method for fabricating an essentially uniformly dense boron carbide article of a length-to-diameter or width ratio greater than 2 to 1 comprising the steps of providing a plurality of article segments to be joined together to form the article with each of said article segments having a length-to-diameter or width ratio less than 1.5 to 1. Each segment is fabricated by hot pressing a composition consisting of boron carbide powder at a pressure and temperature effective to provide the article segment with a density greater than about 85% of theoretical density, providing each article segment with parallel planar end surfaces, placing a plurality of said article segments in a hot-pressing die in a line with the planar surfaces of adjacent article segments being disposed in intimate contact, and hot pressing the aligned article segments at a temperature and pressure effective to provide said article with a density over the length thereof in the range of about 94 to 98 percent theoretical density and greater than the density provided in the discrete hot pressing of each of the article segments and to provide a bond between adjacent article segments with said bond being at least equivalent in hardness, strength and density to a remainder of said article

  18. Microdosimetry for Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    Maughan, R.L.; Kota, C.

    2000-01-01

    The specific aims of the research proposal were as follows: (1) To design and construct small volume tissue equivalent proportional counters for the dosimetry and microdosimetry of high intensity thermal and epithermal neutron beams used in BNCT, and of modified fast neutron beams designed for boron neutron capture enhanced fast neutron therapy (BNCEFNT). (2) To develop analytical methods for estimating the biological effectiveness of the absorbed dose in BNCT and BNCEFNT based on the measured microdosimetric spectra. (3) To develop an analytical framework for comparing the biological effectiveness of different epithermal neutron beams used in BNCT and BNCEFNT, based on correlated sets of measured microdosimetric spectra and radiobiological data. Specific aims (1) and (2) were achieved in their entirety and are comprehensively documented in Jay Burmeister's Ph.D. dissertation entitled ''Specification of physical and biologically effective absorbed dose in radiation therapies utilizing the boron neutron capture reaction'' (Wayne State University, 1999). Specific aim (3) proved difficult to accomplish because of a lack of sufficient radiobiological data

  19. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  20. Salt stress aggravates boron toxicity symptoms in banana leaves by impairing guttation.

    Science.gov (United States)

    Shapira, O R; Israeli, Yair; Shani, Uri; Schwartz, Amnon

    2013-02-01

    Boron (B) is known to accumulate in the leaf margins of different plant species, arguably a passive consequence of enhanced transpiration at the ends of the vascular system. However, transpiration rate is not the only factor affecting ion distribution. We examine an alternative hypothesis, suggesting the participation of the leaf bundle sheath in controlling radial water and solute transport from the xylem to the mesophyll in analogy to the root endodermis. In banana, excess B that remains confined to the vascular system is effectively disposed of via dissolution in the guttation fluid; therefore, impairing guttation should aggravate B damage to the leaf margins. Banana plants were subjected to increasing B concentrations. Guttation rates were manipulated by imposing a moderate osmotic stress. Guttation fluid was collected and analysed continuously. The distribution of ions across the lamina was determined. Impairing guttation indeed led to increased B damage to the leaf margins. The kinetics of ion concentration in guttation samples revealed major differences between ion species, corresponding to their distribution in the lamina dry matter. We provide evidence that the distribution pattern of B and other ions across banana leaves depends on active filtration of the transpiration stream and on guttation. © 2012 Blackwell Publishing Ltd.

  1. Contributions te the study of methods and factors affecting the spectrophotometric determination of boron traces with carmin uranium compounds; Contribucion al estudio del metodo y factores que afectan a la determinacion espectrofotometrica de trazas de boro con Carmin en compuestos de uranio

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez Cellini, R; Gasco Sanchez, L

    1956-07-01

    The study of some factors affecting the spectrophotometric determination of boron traces with carmin is made; the influence of carmin from different origin, the stability of complex carmin-boric acid in relation with the sulphuric acid concentration, the interference produced by ion nitrate, and the ion uraline and light influence are discussed. (Author) 36 refs.

  2. Magnetic vinylphenyl boronic acid microparticles for Cr(VI) adsorption: Kinetic, isotherm and thermodynamic studies

    International Nuclear Information System (INIS)

    Kara, Ali; Demirbel, Emel; Tekin, Nalan; Osman, Bilgen; Beşirli, Necati

    2015-01-01

    Highlights: • Cr(VI) can oxidize biological molecules and be one of the most harmful substance. • Magnetic seperation techniques are used on different applications in many fields. • Magnetic systems can be used for rapid and selective removal as a magnetic processor. • We investigate properties of both new material and other magnetic adsorbents reported in the literatures on the adsorption of Cr(VI) ions. • No researchments were reported on adsorption of Cr(VI) with magnetic vinylphenyl boronic acid microparticles. - Abstract: Magnetic vinylphenyl boronic acid microparticles, poly(ethylene glycol dimethacrylate(EG)–vinylphenyl boronic acid(VPBA)) [m-poly(EG–VPBA)], produced by suspension polymerization and characterized, was found to be an efficient solid polymer for Cr(VI) adsorption. The m-poly(EG–VPBA) microparticles were prepared by copolymerizing of ethylene glycol dimethylacrylate (EG) with 4-vinyl phenyl boronic acid (VPBA). The m-poly(EG–VPBA) microparticles were characterized by N 2 adsorption/desorption isotherms, electron spin resonance (ESR), X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), thermal gravimetric analysis (TGA), elemental analysis, scanning electron microscope (SEM) and swelling studies. The m-poly(EG–VPBA) microparticles were used at adsorbent/Cr(VI) ion ratios. The influence of pH, Cr(VI) initial concentration, temperature of the removal process was investigated. The maximum removal of Cr(VI) was observed at pH 2. Langmuir isotherm and Dubinin–Radushkvich isotherm were found to better fit the experiment data rather than Fruendlich isotherm. The kinetics of the adsorption process of Cr(VI) on the m-poly(EG–VPBA) microparticles were investigated using the pseudo first-order, pseudo-second-order, Ritch-second-order and intraparticle diffusion models, results showed that the pseudo-second order equation model provided the best correlation with the experimental results. The thermodynamic

  3. Flame-photometric determination of boron in alloys with chromatographic separation

    International Nuclear Information System (INIS)

    Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S.

    1983-01-01

    A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation

  4. Flame-photometric determination of boron in alloys with chromatographic separation

    Energy Technology Data Exchange (ETDEWEB)

    Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S. (AN SSSR, Chernogolovka. Inst. Fiziki Tverdogo Tela)

    1983-01-01

    A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation.

  5. SHB1/HY1 Alleviates Excess Boron Stress by Increasing BOR4 Expression Level and Maintaining Boron Homeostasis in Arabidopsis Roots

    Directory of Open Access Journals (Sweden)

    Qiang Lv

    2017-05-01

    Full Text Available Boron is an essential mineral nutrient for higher plant growth and development. However, excessive amounts of boron can be toxic. Here, we report on the characterization of an Arabidopsis mutant, shb1 (sensitive to high-level of boron 1, which exhibits hypersensitivity to excessive boron in roots. Positional cloning demonstrated that the shb1 mutant bears a point mutation in a gene encoding a heme oxygenase 1 (HO1 corresponding to the HY1 gene involved in photomorphogenesis. The transcription level of the SHB1/HY1 gene in roots is up-regulated under excessive boron stimulation. Either overexpressing SHB1/HY1 or applying the HO1 inducer hematin reduces boron accumulation in roots and confers high boron tolerance. Furthermore, carbon monoxide and bilirubin, catalytic products of HO1, partially rescue the boron toxicity-induced inhibition of primary root growth in shb1. Additionally, the mRNA level of BOR4, a boron efflux transporter, is reduced in shb1 roots with high levels of boron supplementation, and hematin cannot relieve the boron toxicity-induced root inhibition in bor4 mutants. Taken together, our study reveals that HO1 acts via its catalytic by-products to promote tolerance of excessive boron by up-regulating the transcription of the BOR4 gene and therefore promoting the exclusion of excessive boron in root cells.

  6. Influence of boron reduction strategies on PWR accident management flexibility

    International Nuclear Information System (INIS)

    Papukchiev, Angel Aleksandrov; Liu, Yubo; Schaefer, Anselm

    2007-01-01

    In conventional pressurized water reactor (PWR) designs, soluble boron is used for reactivity control over core fuel cycle. Design changes to reduce boron concentration in the reactor coolant are of general interest regarding three aspects - improved reactivity feedback properties, lower impact of boron dilution scenarios on PWR safety and eventually more flexible accident management procedures. In order to assess the potential advantages through the introduction of boron reduction strategies in current PWRs, two low boron core configurations based on fuel with increased utilization of gadolinium and erbium burnable absorbers have been developed. The new PWR designs permit to reduce the natural boron concentration in reactor coolant at begin of cycle to 518 ppm and 805 ppm. For the assessment of the potential safety advantages of these cores a hypothetical beyond design basis accident has been simulated with the system code ATHLET. The analyses showed improved inherent safety and increased accident management flexibility of the low boron cores in comparison with the standard PWR. (author)

  7. Boron neutron capture therapy for malignant melanoma: An experimental approach

    Energy Technology Data Exchange (ETDEWEB)

    Larsson, B.S.; Larsson, B.; Roberto, A. (Uppsala Univ. (Sweden))

    1989-07-01

    Previous studies have shown that some thioamides, e.g., thiouracil, are incorporated as false precursors into melanin during its synthesis. If boronated analogs of the thioamides share this property, the melanin of melanotic melanomas offers a possibility for specific tumoural uptake and retention of boron as a basis for neutron capture therapy. We report on the synthesis of boronated 1H-1,2,4-triazole-3-thiol (B-TZT), boronated 5-carboxy-2-thiouracil (B-CTU), and boronated 5-diethylaminomethyl-2-thiouracil (B-DEAMTU) and the localization of these substances in melanotic melanomas transplanted to mice. The distribution in the mice was studied by boron neutron capture radiography. B-TZT and B-CTU showed the highest tumour:normal tissue concentration ratios, with tumour:liver ratios of about 4 and tumour:muscle ratios of about 14; B-DEAMTU showed corresponding ratios of 1.4 and 5, respectively. The absolute concentration of boron in the tumours, however, was more than three times higher in the mice injected with B-TZT, compared with B-CTU. The results suggest that B-TZT may be the most promising compound of the three tested with regard to possible therapy of melanotic melanomas.

  8. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  9. Structure and single-phase regime of boron carbides

    International Nuclear Information System (INIS)

    Emin, D.

    1988-01-01

    The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B 4 C (the boron carbide with nominally 20% carbon) has B/sub 11/C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B 4 C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C→C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B/sub 13/C 2 , subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B/sub 11/C→B/sub 12/. Maxima of the free energy occur at the most ordered compositions: B 4 C,B/sub 13/C 2 ,B/sub 14/C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides

  10. No evidence that boron influences tree species distributions in lowland tropical forests of Panama.

    Science.gov (United States)

    Turner, Benjamin L; Zalamea, Paul-Camilo; Condit, Richard; Winter, Klaus; Wright, S Joseph; Dalling, James W

    2017-04-01

    It was recently proposed that boron might be the most important nutrient structuring tree species distributions in tropical forests. Here we combine observational and experimental studies to test this hypothesis for lowland tropical forests of Panama. Plant-available boron is uniformly low in tropical forest soils of Panama and is not significantly associated with any of the > 500 species in a regional network of forest dynamics plots. Experimental manipulation of boron supply to seedlings of three tropical tree species revealed no evidence of boron deficiency or toxicity at concentrations likely to occur in tropical forest soils. Foliar boron did not correlate with soil boron along a local scale gradient of boron availability. Fifteen years of boron addition to a tropical forest increased plant-available boron by 70% but did not significantly change tree productivity or boron concentrations in live leaves, wood or leaf litter. The annual input of boron in rainfall accounts for a considerable proportion of the boron in annual litterfall and is similar to the pool of plant-available boron in the soil, and is therefore sufficient to preclude boron deficiency. We conclude that boron does not influence tree species distributions in Panama and presumably elsewhere in the lowland tropics. No claim to original US government works New Phytologist © 2016 New Phytologist Trust.

  11. Reload safety evaluation of boron dilution accident related to shutdown margin proportional to boron concentration

    International Nuclear Information System (INIS)

    Zee, Sung Kyun; Lee, Ki Bog; Song, Jae Woong

    1993-06-01

    This report investigates the efficient safety evaluation method and analysis procedure on Boron Dilution Accident(BDA) under the proportional shutdown margin to boron concentration. Also investigated are problems caused by applying this shutdown margin limit. Through this investigation, the safety of Kori-3 Cycle-8, Yonggwang-2 Cycle-7, Kori-4 Cycle-8 and Yonggwang-1 Cycle-8 with respect to BDA is verified. In order to satisfy the shutdown margin requirement in the Technical Specifications, it is shown that the High Flux Alarm at Shutdown Setting for Kori-4 Cycle-8 and Yonggwang-1 Cycle-8 at Mode 5 should be set at 2 or the Technical Specification should be revised. (Author)

  12. Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

    International Nuclear Information System (INIS)

    Slack, G.A.; Rosolowski, J.H.; Miller, M.L.; Huseby, I.C.

    1984-12-01

    The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B 68 Y, α-B 12 Al, B 4 C, and B 6 Si are described. Transition metals appear to be effective dopants for B 68 Y and B 4 C

  13. Dose modification factors in boron neutron capture therapy

    Energy Technology Data Exchange (ETDEWEB)

    Allen, B.J. (Australian Nuclear Science and Technology Organization (ANSTO), Menai (Australia))

    1993-01-01

    The effective treatment depth and therapeutic ratio in boron neutron capture therapy (BNCT) depend on a number of macroscopic dose factors such as boron concentrations in the tumor, normal tissue and blood. However, the role of various microscopic dose modification factors can be of critical importance in the evaluation of normal tissue tolerance levels. An understanding of these factors is valuable in designing BNCT experiments and the selection of appropriate boron compounds. These factors are defined in this paper and applied to the case of brain tumors with particular attention to capillary endothelial cells and oligodendrocytes. (orig.).

  14. Photometric and emission-spectrometric determination of boron in steels

    International Nuclear Information System (INIS)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated. (orig.) [de

  15. On Certain Topological Indices of Boron Triangular Nanotubes

    Science.gov (United States)

    Aslam, Adnan; Ahmad, Safyan; Gao, Wei

    2017-08-01

    The topological index gives information about the whole structure of a chemical graph, especially degree-based topological indices that are very useful. Boron triangular nanotubes are now replacing usual carbon nanotubes due to their excellent properties. We have computed general Randić (Rα), first Zagreb (M1) and second Zagreb (M2), atom-bond connectivity (ABC), and geometric-arithmetic (GA) indices of boron triangular nanotubes. Also, we have computed the fourth version of atom-bond connectivity (ABC4) and the fifth version of geometric-arithmetic (GA5) indices of boron triangular nanotubes.

  16. Ultrastructural changes in tumor cells following boron neutron capture therapy

    International Nuclear Information System (INIS)

    Barkla, D.H.; Brown, J.K.; Meriaty, H.; Allen, B.J.

    1992-01-01

    In a previous study the authors reported on morphological changes in two human melanoma cell lines treated with 10 B-phenylalanine(BPA) and Boron Neutron Capture Therapy(BNCT). The present study describes morphological changes in melanoma and glioma cell lines treated with boron-tetraphenyl porphyrin(BTPP) and BNCT. Porphyrin compounds are selectively taken up by tumor cells and have been used clinically in phototherapy treatment of cancer patients. Boronated porphyrins show good potential as therapeutic agents in BNCT treatment of human cancer patients

  17. Electrophoretic deposition of boron-10 in neutron detectors electrodes

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de; Vinhas, L.A.; Vieira, J.M.

    1990-01-01

    Process of boron-10 electrophoresis on large area of aluminum substrates was developed with the aim of using them in the construction of neutron detectors. After definition and optimization of the boron electrophoresis parameters, depositions of boron-10 on aluminum cylinders were performed and used as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. These prototypes were designed and builded at IPEN-CNEN-SP, and submited for characterization tests at IEA-R1 reactor, and they fulfil the technical specifications of the project. (author) [pt

  18. On certain topological indices of boron triangular nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aslam, Adnan [Univ. of Engineering and Technology, Lahore (Pakistan). Dept. of Natural Sciences and Humanities; Ahmad, Safyan [GC Univ. Lahore (Pakistan). Abdus Salam School of Mathematical Sciences; Gao, Wei [Yunnan Normal Univ., Kunming (China). School of Information Science and Technology

    2017-11-01

    The topological index gives information about the whole structure of a chemical graph, especially degree-based topological indices that are very useful. Boron triangular nanotubes are now replacing usual carbon nanotubes due to their excellent properties. We have computed general Randic (R{sub a}), first Zagreb (M{sub 1}) and second Zagreb (M{sub 2}), atom-bond connectivity (ABC), and geometric-arithmetic (GA) indices of boron triangular nanotubes. Also, we have computed the fourth version of atom-bond connectivity (ABC{sub 4}) and the fifth version of geometric-arithmetic (GA{sub 5}) indices of boron triangular nanotubes.

  19. Boron complexing with H-resorcinol and acidic hydroxyxanthene dyes

    International Nuclear Information System (INIS)

    Nazarenko, V.A.; Flyantikova, G.V.; Chekirda, T.N.

    1984-01-01

    Complex formation of boron with H-resorcinol (hr; 2,4-dihydroxybenzene-azo -8-hydroxynaphtalene-3,6-disulfonic acid) and acidic hydroxyxanthene dyes (hxd: fluorescein, eosine, erathrosine). Mixed-ligand complexes with a ratio of r:hr:hxd=1:1:1 are formed at pH=5-6. The chemism of the complex formation of boron with H-resorcinol and fluorescein has been studied. The stability consta nt of the complex is 1.12x10 21 , the conditional molar absorptivitis 1.80x10 0 . This complex formation reaction was used for photometric determination of boron in natural water

  20. Coordination Networks Based on Boronate and Benzoxaborolate Ligands

    Directory of Open Access Journals (Sweden)

    Saad Sene

    2016-05-01

    Full Text Available Despite the extensive range of investigations on boronic acids (R-B(OH2, some aspects of their reactivity still need to be explored. This is the case for the coordination chemistry of boronate anions (R-B(OH3−, which has only recently been started to be studied. The purpose of this review is to summarize some of the key features of boronate ligands (and of their cyclic derivatives, benzoxaborolates in materials: (i coordination properties; (ii spectroscopic signatures; and (iii emerging applications.

  1. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, W.; Nakaanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

  2. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  3. Interlayer shear of nanomaterials: Graphene-graphene, boron nitride-boron nitride and graphene-boron nitride

    Institute of Scientific and Technical Information of China (English)

    Yinfeng Li; Weiwei Zhang; Bill Guo; Dibakar Datta

    2017-01-01

    In this paper,the interlayer sliding between graphene and boron nitride (h-BN) is studied by molecular dynamics simulations.The interlayer shear force between h-BN/h-BN is found to be six times higher than that of graphene/graphene,while the interlayer shear between graphene/h-BN is approximate to that of graphene/graphene.The graphene/h-BN heterostructure shows several anomalous interlayer shear characteristics compared to its bilayer counterparts.For graphene/graphene and h-BN/h-BN,interlayer shears only exit along the sliding direction while interlayer shear for graphene/h-BN is observed along both the translocation and perpendicular directions.Our results provide significant insight into the interlayer shear characteristics of 2D nanomaterials.

  4. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    Kitaoka, Yoshinori

    1993-09-01

    This volume contains the proceedings of the 5th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 22 in 1993. The solubility of the boron carrier play an important role in the BNCT. New water-soluble p-boronophenylalanine derivatives are synthesized and their biological activities are investigated (Chap. 2 and 3). Some chemical problems on the BNCT were discussed, and the complex formation reaction of hydroxylboryl compounds were studied by the paper electrophoresis (Chap. 4). The results of the medical investigation on the BNCT using BSH compounds are shown in Chap. 5. Syntheses of o- and m-boronophenylalanine were done and their optical resolution was tried (Chap. 6). The complex formation reaction of p-boronophenylalanine (BPA) with L-DOPA and the oxidation reaction of the analogs are found in Chap. 7. The pka of BPA were determined by the isotachophoresis (Chap. 8). The chemical nature of dihydroxyboryl compounds were investigated by an infrared spectroscopy and electrophoresis (Chap. 9). New synthetic methods of BPA and p-boronophenylserine using ester of isocyanoacetic acid are described in Chap. 10. The induction of chromosomal aberations by neutron capture reaction are discussed from a point of the biological view. The a of the presented papers are indexed individually. (J.P.N.)

  5. The optical properties of boron carbide near boron K-edge inside periodical multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ksenzov, Dmitriy; Schlemper, Christoph; Pietsch, Ullrich [University of Siegen (Germany)

    2010-07-01

    Multilayer mirrors made for the use in the wavelength range near K-edge of boron (188 eV) are of great interest for X-ray fluorescence analysis of boron content in doped semiconductors, plasma diagnostics, astronomy and lithography. Moreover, multilayer mirrors composed by a metal and a low Z element like boron are used as optical elements in both the soft x-ray spectral range as well as at higher photon energies on 3rd generation synchrotron beamlines. Using an energy-resolved photon-in-photon-out method we reconstructed the optical data from energy dependence of both integrated peak intensity and FWHM of the 1st order ML Bragg peak measured at the UHV triple axis soft-x-ray reflectometer at BESSY II. The experiments clearly demonstrate that the peak shape of the ML Bragg peak is most sensitive to any kind of electronic excitation and recombination in solid. The soft-ray reflectivity can give detailed information for MLs with thickness up to several tens of nanometers. In addition, measurements close to a resonance edge probe the chemical state of the respective constituent accompanied with a high sensitivity of changes close to the sample surface.

  6. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    International Nuclear Information System (INIS)

    Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

    2007-01-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm 2 , initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10 6 x[OH] 0.11 x[CD] 0.62 x[IBC] -0.57 x[DSE] -0.04 x[T] -2.98 x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  7. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  8. Selection of boron based tribological hard coatings using multi-criteria decision making methods

    International Nuclear Information System (INIS)

    Çalışkan, Halil

    2013-01-01

    Highlights: • Boron based coating selection problem for cutting tools was solved. • EXPROM2, TOPSIS and VIKOR methods were used for ranking the alternative materials. • The best coatings for cutting tool were selected as TiBN and TiSiBN. • The ranking results are in good agreement with cutting test results in literature. - Abstract: Mechanical and tribological properties of hard coatings can be enhanced using boron as alloying element. Therefore, multicomponent nanostructured boron based hard coatings are deposited on cutting tools by different methods at different parameters. Different mechanical and tribological properties are obtained after deposition, and it is a difficult task to select the best coating material. In this paper, therefore, a systematic evaluation model was proposed to tackle the difficulty of the material selection with specific properties among a set of available alternatives. The alternatives consist of multicomponent nanostructured TiBN, TiCrBN, TiSiBN and TiAlSiBN coatings deposited by magnetron sputtering and ion implantation assisted magnetron sputtering at different parameters. The alternative coating materials were ranked by using three multi-criteria decision-making (MCDM) methods, i.e. EXPROM2 (preference ranking organization method for enrichment evaluation), TOPSIS (technique for order performance by similarity to ideal solution) and VIKOR (VIšekriterijumsko KOmpromisno Rangiranje), in order to determine the best coating material for cutting tools. Hardness (H), Young’s modulus (E), elastic recovery, friction coefficient, critical load, H/E and H 3 /E 2 ratios were considered as material selection criteria. In order to determine the importance weights of the evaluation criteria, a compromised weighting method, which composes of the analytic hierarchy process and Entropy methods, were used. The ranking results showed that TiBN and TiSiBN coatings deposited at given parameters are the best coatings for cutting tools

  9. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Chubarov, M.; Pedersen, H.; Högberg, H.; Filippov, S.; Engelbrecht, J.A.A.; O'Connel, J.; Henry, A.

    2014-01-01

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  10. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  11. Boronic acids for fluorescence imaging of carbohydrates.

    Science.gov (United States)

    Sun, Xiaolong; Zhai, Wenlei; Fossey, John S; James, Tony D

    2016-02-28

    "Fluorescence imaging" is a particularly exciting and rapidly developing area of research; the annual number of publications in the area has increased ten-fold over the last decade. The rapid increase of interest in fluorescence imaging will necessitate the development of an increasing number of molecular receptors and binding agents in order to meet the demand in this rapidly expanding area. Carbohydrate biomarkers are particularly important targets for fluorescence imaging given their pivotal role in numerous important biological events, including the development and progression of many diseases. Therefore, the development of new fluorescent receptors and binding agents for carbohydrates is and will be increasing in demand. This review highlights the development of fluorescence imaging agents based on boronic acids a particularly promising class of receptors given their strong and selective binding with carbohydrates in aqueous media.

  12. Boron carbide in pile behaviour Rapsodie experience

    International Nuclear Information System (INIS)

    Kryger, B.; Colin, M.

    1983-04-01

    Results concerning boron carbide irradiation experiments performed in RAPSODIE up to 10 22 .cm - 3 capture density in the temperature range 600-1100 0 lead to the following main conclusions: initial density and grain size lowering contribute to swelling decrease but density is the major parameter for swelling limitation; swelling rate can vary in a wide range (ratio 1 to 3) according to combinations of density (1.8 to 2.3) and grain size (10 to 50 μm) values; a swelling balance reveals that the most important contribution to swelling should be a high density of helium small bubbles (<400 A); helium retention increases with density and grain size and decreases with temperature elevation. A diffusion law is proposed to describe the rate of helium release

  13. Hexagonal boron nitride and water interaction parameters

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanbin; Aluru, Narayana R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  14. Apatite formability of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Lahiri, Debrupa; Keshri, Anup K; Agarwal, Arvind; Singh, Virendra; Seal, Sudipta

    2011-01-01

    This study investigates the ability of boron nitride nanotubes (BNNTs) to induce apatite formation in a simulated body fluid environment for a period of 7, 14 and 28 days. BNNTs, when soaked in the simulated body fluid, are found to induce hydroxyapatite (HA) precipitation on their surface. The precipitation process has an initial incubation period of ∼ 4.6 days. The amount of HA precipitate increases gradually with the soaking time. High resolution TEM results indicated a hexagonal crystal structure of HA needles. No specific crystallographic orientation relationship is observed between BNNT and HA, which is due to the presence of a thin amorphous HA layer on the BNNT surface that disturbs a definite orientation relationship.

  15. Boron in plants: deficiency and toxicity.

    Science.gov (United States)

    Camacho-Cristóbal, Juan J; Rexach, Jesús; González-Fontes, Agustín

    2008-10-01

    Boron (B) is an essential nutrient for normal growth of higher plants, and B availability in soil and irrigation water is an important determinant of agricultural production. To date, a primordial function of B is undoubtedly its structural role in the cell wall; however, there is increasing evidence for a possible role of B in other processes such as the maintenance of plasma membrane function and several metabolic pathways. In recent years, the knowledge of the molecular basis of B deficiency and toxicity responses in plants has advanced greatly. The aim of this review is to provide an update on recent findings related to these topics, which can contribute to a better understanding of the role of B in plants.

  16. A boron nitride nanotube peapod thermal rectifier

    International Nuclear Information System (INIS)

    Loh, G. C.; Baillargeat, D.

    2014-01-01

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  17. A boron nitride nanotube peapod thermal rectifier

    Energy Technology Data Exchange (ETDEWEB)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  18. Boron hydride analogues of the fullerenes

    International Nuclear Information System (INIS)

    Quong, A.A.; Pederson, M.R.; Broughton, J.Q.

    1994-01-01

    The BH moiety is isoelectronic with C. We have studied the stability of the (BH) 60 analogue of the C 60 fullerene as well as the dual-structure (BH) 32 icosahedron, both of them being putative structures, by performing local-density-functional electronic calculations. To aid in our analysis, we have also studied other homologues of these systems. We find that the latter, i.e., the dual structure, is the more stable although the former is as stable as one of the latter's lower homologues. Boron hydrides, it seems, naturally form the dual structures used in algorithmic optimization of complex fullerene systems. Fully relaxed geometries are reported as well as electron affinities and effective Hubbard U parameters. These systems form very stable anions and we conclude that a search for BH analogues of the C 60 alkali-metal supeconductors might prove very fruitful

  19. Rebar graphene from functionalized boron nitride nanotubes.

    Science.gov (United States)

    Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

    2015-01-27

    The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

  20. Separation of boron isotopes by infrared laser

    International Nuclear Information System (INIS)

    Suzuki, Kazuya

    1995-01-01

    Vibrationally excited chemical reaction of boron tribromide (BBr 3 ) with oxygen (O 2 ) is utilized to separate 10 B and 11 B. Infrared absorption of 10 BBr 3 is at 11.68μ and that of 11 BBr 3 is at 12.18μ. The wavelengths of ammonia laser made in the laboratory were mainly 11.71μ, 12.08μ and 12.26μ. Irradiation was done by focussing the laser with ZnSe lens on the sample gas (mixture of 1.5 torr of natural BBr 3 and 4.5 torr of O 2 ) in the reaction cell. Depletions of 10 BBr 3 and 11 BBr 3 due to chemical reaction of BBr 3 with O 2 was measured with infrared spectrometer. The maximum separation factor β( 10 B/ 11 B) obtained was about 4.5 (author)