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Sample records for boron doped eurofer97

  1. LCF and FCP in Eurofer97 steel

    International Nuclear Information System (INIS)

    Reduced activation ferritic martensitic steel, Eurofer97, is considered as one of the potential candidates for the structural components of the TBM (Test Blanket Module) of ITER and of future fusion power plants. Such components will operate under combined mechanical and thermal cycling, thus in order to design them the low cycle fatigue life and the fatigue crack propagation behaviour have to be examined. In the present work the low cycle fatigue life and fatigue crack propagation results for different technological products of Eurofer97 steel were investigated both in reference and in irradiated conditions. The fatigue behaviour of Eurofer97 steel is found to be similar to that of the conventional F82H steel. In both steels the decrease in fatigue resistance is observed with the increase of test temperature. A reduction in low cycle fatigue life occurs above 450 deg. C due to thermal activation of the material. A considerable scatter in fatigue life is observed in both steels, which is often attributed to the fact that fatigue is a stochastic process. No pronounced effect of the different technological product forms on the fatigue life of Eurofer97 has been observed. However, ODS Eurofer97 (0.5 wt.% Y2O3) steel exhibits a shorter fatigue life at higher strain range (1-1.4%). Irradiation at low temperature (300 deg. C, 2.5 dpa), when irradiation hardening occurs, is found to be beneficial at low strain amplitude and to be adverse at high strain amplitude. Irradiation at higher temperatures (> 450 deg. C, 2.5 dpa), when there is no irradiation hardening, seems not to affect low cycle fatigue behaviour of Eurofer97. The effect of creep/fatigue interaction is observed in the low strain ranges where the longer testing times allow the creep mechanism to affect the material. Hold time and irradiation at 450 deg. C up to 2.5 dpa have no influence on the fatigue crack propagation in Eurofer97 steel in the linear region II at testing temperature of 450 deg. C. (author)

  2. Microstructure characterization of nanostructured Eurofer 97 steel

    International Nuclear Information System (INIS)

    In this study, samples of Eurofer 97 steel were subjected to processing by hydrostatic extrusion (HE) to a total true strain of about 4. HE processing resulted in a significant grain refinement. Microstructural changes caused by extrusion were observed using transmission and scanning electron microscopy. Thin foils for these observations were prepared using focus ion beam and electrochemical thinning. The microstructure of Eurofer 97 in the as-received state is characterized by ferrite grains, with some presence of martensite, and a significant density of carbides. The microstructures were quantitatively described in terms of the grain and particle size and their distributions. The average ferrite grain size in the as-received state was about 400 nm and the average size of carbides - 111 nm. After HE the grain size dropped to 86 nm and the average size of carbides to 75 nm HE also resulted in a more uniform grain size and spatial distribution of carbides. Various carbides were identified including TaC of the diameter of 20 nm. (au)

  3. Corrosion susceptibility of EUROFER97 in lithium ceramics breeders

    International Nuclear Information System (INIS)

    EUROFER97 specimens were exposed in vacuum to lithium silicate pebbles at 550 °C for up to 2880 h, to evaluate its corrosion susceptibility in a simulated breeder blanket environment. The specimens and pebble bed were then analyzed and characterized by SEM-EDX, XRD, and HR-TEM. The results revealed the formation of a double chromium/iron oxide corrosion layer. HR-TEM also showed that the inner layer was amorphous, while the outer was crystalline. The amorphous layer was brittle, broke easily, and became detached from the steel

  4. Thermal stability of hydrostatically extruded EUROFER 97 steel

    International Nuclear Information System (INIS)

    EUROFER 97 steel is a candidate structural material for the future fusion power reactors, as well as for the European Test Blanket Modules (TBMs) to be tested in ITER. In the reported study, the microstructure of EUROFER 97 was modified by hydrostatic extrusion (HE) which reduced the grain size from 400 to 86 nm and that of the carbide particles from 111 to 75 nm. The changes in the microstructure significantly improved the strength of the extruded samples. However, it is important that the enhanced properties of nanostructured materials are stable over the required range of intended service temperature. The thermal stability of the nanostructured EUROFER steel was evaluated by subjecting the hydrostatically extruded samples to annealing at temperatures ranging from 473 to 1073 K (200-800 deg. C) for 1 h. Tensile tests and microhardness measurements with a 200 g load were carried out on the annealed samples to determine the effect of the heat treatment. The results show that the highest microhardness (403 HV0.2) was achieved for samples annealed at 673 K. However, the tensile and yield strength decreased at the higher temperature of 873 K and the total elongation increased to 15%, compared to only 3% for as-extruded samples. The changes in the mechanical properties were rationalized by the examination of the microstructural changes. During heating the initial grain size remains virtually unchanged below a temperature of 873 K. However, above 873 K the grain size increased and it is very likely that growth will be very rapid at higher temperatures.

  5. Modelling of radiation effects: from iron to EUROFER97

    International Nuclear Information System (INIS)

    High chromium ferritic/martensitic steels are promising candidate structural materials for future fusion reactors. The safe application of these materials requires a careful assessment of their mechanical stability under high energy neutron irradiation. However, no experimental facility is currently capable of reproducing the expected hard neutron spectra and high neutron fluxes. Thus, the in-service behaviour of these steels must be extrapolated to the real conditions, from data obtained in existing irradiation facilities. In order to do so in a rational way, it is vital to reach a good level of understanding of the physical phenomena driving the material response to irradiation for different chemical compositions. For example, it has been observed that a yet unexplained minimum in radiation-induced ductile-brittle transition temperature shift appears at about 9 weight percent Cr. In addition, neutron irradiation experiments on Fe Cr alloys show that adding Cr up to concentrations of 12 to 15 weight percent leads to a pronounced decrease in swelling compared to pure alpha-Fe, although for the highest concentrations embrittlement becomes an issue, due to alpha phase formation. Research by SCK-CEN aims at shedding light on the fundamental physical mechanisms producing the above-mentioned dependence on Cr concentration of important macroscopic parameters defining the mechanical stability under neutron irradiation of high-Cr steels, such as Eurofer97. For this purpose, a bottom-up multi scale modelling approach, using computer simulation techniques combined to state-of-the-art experimental examination of Fe-Cr model alloys, has been applied during the last few years at SCK-CEN in collaboration with other European labs

  6. Effect of tempering on the microstructure, electrical, and magnetic properties of Eurofer-97 steel

    Energy Technology Data Exchange (ETDEWEB)

    Sandim, M.J.R., E-mail: msandim@demar.eel.usp.br [Escola de Engenharia de Lorena, University of Sao Paulo, 12602-810 Lorena, SP (Brazil); Farrão, F.U.; Oliveira, V.B.; Bredda, E.H. [Escola de Engenharia de Lorena, University of Sao Paulo, 12602-810 Lorena, SP (Brazil); Santos, A.D. [Instituto de Física, University of Sao Paulo, 05314-970 Sao Paulo, SP (Brazil); Santos, C.A.M. dos; Sandim, H.R.Z. [Escola de Engenharia de Lorena, University of Sao Paulo, 12602-810 Lorena, SP (Brazil)

    2015-06-15

    Highlights: • Tempering keeps grain structure of Eurofer-97 steel almost unchanged. • Hardness slightly increases for Eurofer-97 steel tempered at ∼500 °C. • Electrical resistivity slightly increases for Eurofer-97 steel tempered at ∼500 °C. • Hardness, H{sub c}, and ρ decrease for tempering above 500 °C. • Major changes are associated with precipitation of MX and M{sub 23}C{sub 6} carbides. - Abstract: Reduced-activation ferritic–martensitic Eurofer-97 steel is a potential candidate for structural application in future nuclear fusion reactors. Samples of Eurofer-97 steel were cold rolled to 80% reduction in thickness, austenitized at 1050 and 1150 °C for 30 min and tempered at several temperatures up to 800 °C for 2 h each. The microstructural characterization of the samples was performed using Vickers microhardness testing and electron backscatter diffraction (EBSD). Electrical resistivity and coercive field measurements were also performed to follow microstructural changes during isothermal tempering. Results were discussed with focus on the precipitation of MX and M{sub 23}C{sub 6} carbides and related changes in these properties.

  7. Effect of tempering on the microstructure, electrical, and magnetic properties of Eurofer-97 steel

    International Nuclear Information System (INIS)

    Highlights: • Tempering keeps grain structure of Eurofer-97 steel almost unchanged. • Hardness slightly increases for Eurofer-97 steel tempered at ∼500 °C. • Electrical resistivity slightly increases for Eurofer-97 steel tempered at ∼500 °C. • Hardness, Hc, and ρ decrease for tempering above 500 °C. • Major changes are associated with precipitation of MX and M23C6 carbides. - Abstract: Reduced-activation ferritic–martensitic Eurofer-97 steel is a potential candidate for structural application in future nuclear fusion reactors. Samples of Eurofer-97 steel were cold rolled to 80% reduction in thickness, austenitized at 1050 and 1150 °C for 30 min and tempered at several temperatures up to 800 °C for 2 h each. The microstructural characterization of the samples was performed using Vickers microhardness testing and electron backscatter diffraction (EBSD). Electrical resistivity and coercive field measurements were also performed to follow microstructural changes during isothermal tempering. Results were discussed with focus on the precipitation of MX and M23C6 carbides and related changes in these properties

  8. Effect of thermal ageing on the fracture behavior of EUROFER'97 steel

    International Nuclear Information System (INIS)

    Full text of publication follows: The low activation 9Cr-1W(V-Ta) EUROFER'97 steel has been accepted as a main structural material of tokamak blanket of prospective DEMO fusion power plant. The efficiency of proposed fusion reactors to the level suitable for energy production is predetermined by increase of temperature in tokamak vessel. The exploitation of EUROFER'97 steel at the temperatures close to 550 deg. C approaches limits of the steel usability. Microstructural changes causing embrittlement of EUROFER'97 steel are generally affected by synergy of thermal and radiation damage. The microstructural changes caused by thermal exposition and irradiation have been analysed in literature: i) irradiation causes formation of vacancies, H and He and Cr-rich α' phase and δ-Fe; ii) thermal exposition causes coarsening of carbides and segregation of P to grain boundaries, besides partially recrystallization to equiaxed ferrite grains. These two phenomena may cause the steel embrittlement and have to be investigated separately. The radiation damage and subsequent effect on mechanical properties has been analysed in literature as a preferred problem. Nevertheless the attention must be paid also to brittle fracture resistance of EUROFER'97 steel after thermal degradation. The aim of the paper has been to investigate physical principles that govern embrittlement of the EUROFER'97 steel in state after thermal ageing simulating the service conditions. The real thermal service conditions were simulated by using step-cooling treatment at temperatures from 650 deg. C to 520 deg. C and long term isothermal ageing at temperature 550 deg. C. The cleavage nucleation and brittle fracture initiation of the EUROFER'97 steel in as received and thermally aged state was analysed and described by means of the macroscopic fracture parameters and in addition, using local failure characteristics. The conditions of cleavage fracture nucleation and propagation across the grain boundary were

  9. Mechanical and corrosion behaviour of EUROFER 97 steel exposed to Pb-17Li

    International Nuclear Information System (INIS)

    Corrosion and tensile samples of the EUROFER 97 steel were exposed to Pb-17Li in the LIFUS II loop at 480 deg. C. The specimens were extracted after 1500, 3000 and 4500 h exposure. After extraction, weight change measurements and metallurgical analysis were performed on the corrosion specimens, while tensile tests were performed at 480 deg. C. The results showed that EUROFER 97 underwent uniform corrosion and the mechanical properties seem to be unaffected or only slightly affected by the liquid metal. In this paper, the results are reported and discussed also with reference to previous similar work

  10. Overview and Critical Assessment of the Tensile Properties of unirradiated and irradiated EUROFER97

    Energy Technology Data Exchange (ETDEWEB)

    Lucon, E.; Vandermeulen, W.

    2007-10-15

    Material research represents a crucial issue for the assessment of fusion as a future viable source of energy. Structural materials, in particular, need to show a superior mechanical and chemical behaviour to guarantee the safe operation of the reactor during its whole lifetime, while retaining low activation characteristics to minimise the environmental impact of the produced waste. In this context, specific efforts have been focused for the last twenty years in Europe, Japan and the US, on developing suitable Reduced Activation Ferritic Martensitic (RAFM) steels as candidate structural materials. EUROFER97 has recently emerged in Europe as the reference material for the DEMO design. In the framework of the Long-Term Programme of EFDA (European Fusion Development Agreement), a coordinated effort has been launched aimed at providing a critical assessment of the mechanical and microstructural properties of EUROFER97 in the unirradiated and irradiated conditions, based on the results accumulated since the late 90ies within numerous EFDA tasks.

  11. Fatigue crack propagation rate in EUROFER 97 estimated using small specimens

    Czech Academy of Sciences Publication Activity Database

    Hutař, Pavel; Náhlík, Luboš; Ševčík, Martin; Seitl, Stanislav; Kruml, Tomáš; Polák, Jaroslav

    2011-01-01

    Roč. 452-453, - (2011), s. 325-328. ISSN 1013-9826 R&D Projects: GA ČR GA106/09/1954; GA ČR GA101/09/0867 Institutional research plan: CEZ:AV0Z20410507 Keywords : small fatigue cracks * Eurofer 97 * J-integral * fatigue crack growth rate Subject RIV: JL - Materials Fatigue, Friction Mechanics

  12. Process optimization for diffusion bonding of tungsten with EUROFER97 using a vanadium interlayer

    International Nuclear Information System (INIS)

    Solid-state diffusion bonding is a selected joining technology to bond divertor components consisting of tungsten and EUROFER97 for application in fusion power plants. Due to the large mismatch in their coefficient of thermal expansions, which leads to serious thermally induced residual stresses after bonding, a thin vanadium plate is introduced as an interlayer. However, the diffusion of carbon originated from EUROFER97 in the vanadium interlayer during the bonding process can form a vanadium carbide layer, which has detrimental influences on the mechanical properties of the joint. For optimal bonding results, the thickness of this layer and the residual stresses has to be decreased sufficiently without a significant reduction of material transport especially at the vanadium/tungsten interface, which can be achieved by varying the diffusion bonding temperature and duration. The investigation results show that at a sufficiently low bonding temperature of 700 °C and a bonding duration of 4 h, the joint reaches a reasonable high ductility and toughness especially at elevated test temperature of 550 °C with elongation to fracture of 20% and mean absorbed Charpy impact energy of 2 J (using miniaturized Charpy impact specimens). The strength of the bonded materials is about 332 MPa at RT and 291 MPa at 550 °C. Furthermore, a low bonding temperature of 700 °C can also help to avoid the grain coarsening and the alteration of the grain structure especially of the EUROFER97 close to the bond interface

  13. Process optimization for diffusion bonding of tungsten with EUROFER97 using a vanadium interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Basuki, Widodo Widjaja; Aktaa, Jarir

    2015-04-15

    Solid-state diffusion bonding is a selected joining technology to bond divertor components consisting of tungsten and EUROFER97 for application in fusion power plants. Due to the large mismatch in their coefficient of thermal expansions, which leads to serious thermally induced residual stresses after bonding, a thin vanadium plate is introduced as an interlayer. However, the diffusion of carbon originated from EUROFER97 in the vanadium interlayer during the bonding process can form a vanadium carbide layer, which has detrimental influences on the mechanical properties of the joint. For optimal bonding results, the thickness of this layer and the residual stresses has to be decreased sufficiently without a significant reduction of material transport especially at the vanadium/tungsten interface, which can be achieved by varying the diffusion bonding temperature and duration. The investigation results show that at a sufficiently low bonding temperature of 700 °C and a bonding duration of 4 h, the joint reaches a reasonable high ductility and toughness especially at elevated test temperature of 550 °C with elongation to fracture of 20% and mean absorbed Charpy impact energy of 2 J (using miniaturized Charpy impact specimens). The strength of the bonded materials is about 332 MPa at RT and 291 MPa at 550 °C. Furthermore, a low bonding temperature of 700 °C can also help to avoid the grain coarsening and the alteration of the grain structure especially of the EUROFER97 close to the bond interface.

  14. Martensitic transformation in Eurofer-97 and ODS-Eurofer steels: A comparative study

    International Nuclear Information System (INIS)

    Highlights: • Martensitic transformation of RAFM steels promotes significant grain fragmentation. • Austenite grain growth occurs in Eurofer-97 steel but not in ODS-Eurofer steel. • Boundary misorientation distribution of the as-quenched steels show two maxima peaks. • The amount of retained austenite varies from one steel to another. - Abstract: Reduced-activation ferritic–martensitic Eurofer-97 and ODS-Eurofer steels are potential candidates for structural applications in advanced nuclear reactors. Samples of both steel grades in the as-tempered condition were austenitized in vacuum for 1 h from 900 °C to 1300 °C followed by air cooling to room temperature. The microstructure was characterized by dilatometry, electron backscatter diffraction (EBSD), and X-ray diffraction (XRD). Thermodynamic calculations provided by Thermo-Calc software were used to determine their transformation temperatures. Even having similar chemical composition, important changes were observed after martensitic transformation in these steels. Significant austenitic grain growth was observed in Eurofer-97 steel leading to the development of coarser martensitic packets. Contrastingly, austenitic grain growth was prevented in ODS-Eurofer steel due to fine and stable dispersion of Y-based particles

  15. Martensitic transformation in Eurofer-97 and ODS-Eurofer steels: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Zilnyk, K.D.; Oliveira, V.B. [Escola de Engenharia de Lorena, University of Sao Paulo (Brazil); Sandim, H.R.Z., E-mail: hsandim@demar.eel.usp.br [Escola de Engenharia de Lorena, University of Sao Paulo (Brazil); Möslang, A. [Karlsruher Institut für Technologie, KIT (Germany); Raabe, D. [Max-Planck Institut für Eisenforschung, MPIE (Germany)

    2015-07-15

    Highlights: • Martensitic transformation of RAFM steels promotes significant grain fragmentation. • Austenite grain growth occurs in Eurofer-97 steel but not in ODS-Eurofer steel. • Boundary misorientation distribution of the as-quenched steels show two maxima peaks. • The amount of retained austenite varies from one steel to another. - Abstract: Reduced-activation ferritic–martensitic Eurofer-97 and ODS-Eurofer steels are potential candidates for structural applications in advanced nuclear reactors. Samples of both steel grades in the as-tempered condition were austenitized in vacuum for 1 h from 900 °C to 1300 °C followed by air cooling to room temperature. The microstructure was characterized by dilatometry, electron backscatter diffraction (EBSD), and X-ray diffraction (XRD). Thermodynamic calculations provided by Thermo-Calc software were used to determine their transformation temperatures. Even having similar chemical composition, important changes were observed after martensitic transformation in these steels. Significant austenitic grain growth was observed in Eurofer-97 steel leading to the development of coarser martensitic packets. Contrastingly, austenitic grain growth was prevented in ODS-Eurofer steel due to fine and stable dispersion of Y-based particles.

  16. Tritium permeation in EUROFER97 steel in EXOTIC-9/1 irradiation experiment

    International Nuclear Information System (INIS)

    This paper presents the results of the tritium permeation study in EUROFER97 carried out within the EXOTIC (EXtraction Of Tritium In Ceramics) irradiation experiment. In the EXOTIC 9/1 experiment, a pebble bed assembly containing Lithium Titanate (Li2TiO3) pebbles is irradiated for 300 days in the High Flux Reactor (HFR), in the temperature range between 340 and 580 °C, reaching a lithium burn up of 3.5% and 1.2 dpa of damage in steel. The primary objective of this experiment was to measure the in-pile tritium release characteristics of Li2TiO3 pebbles. Additionally tritium permeation through the EUROFER97 pebble bed wall was measured on line. The permeation of tritium was studied at steady state conditions, during temperature transients, and at different hydrogen concentrations in the helium purge gas flow. The model used in the analysis of the experimental data which account for co-permeation of tritium and hydrogen is presented. It has been demonstrated that the permeation of tritium under experiment conditions proceeds in the diffusion limited regime. From the analysis of the experimental data the permeability and diffusivity of tritium in EUROFER97 is determined

  17. Influence of the temperature on the tension behaviour of EUROFER97 alloy at high strain rate

    OpenAIRE

    Cadoni Ezio; Dotta Matteo; Forni Daniele; Spätig Philippe

    2015-01-01

    This paper presents an experimental investigation on the influence of the temperature on the reduced activation steel Eurofer97 under uniaxial tensile loads at high strain rate. Round undamaged specimens of this material having gauge length 5 mm, diameter 3 mm, were tested in universal machine to obtain its stress-strain relation under quasi-static condition (0.001s−1), and in modified Hopkinson bar to study its mechanical behaviour at high strain rates (300 s−1, 1000 s−1) respectively. The t...

  18. Characterization of radiation induced defects in EUROFER 97 after neutron irradiation

    International Nuclear Information System (INIS)

    Specimens of EUROFER 97 prepared for impact tests have been irradiated to an average dose of 16.3 dpa at irradiation temperatures of 250-450 deg. C. TEM investigations have been performed to study radiation induced changes in the microstructure. The characterization and statistical analysis show the temperature dependant formation of small dislocation loops and He bubbles. The Burgers vector of dislocation loops was 1/2. A novel feature is that within statistical uncertainty the maximum in the dislocation density observed around 300 deg. C decreased with decreasing irradiation temperature down to 250 deg. C. The TEM data are correlated with tensile and instrumented Charpy test results.

  19. Hydrogen embrittlement and fracture mode of EUROFER 97 ferritic-martensitic steel

    International Nuclear Information System (INIS)

    The hydrogen embrittlement of EUROFER 97 ferritic-martensitic steel promotes a change from ductile to brittle trans- and inter-granular fracture during fracture toughness testing. The brittle fracture is controlled by hydrogen content in the range of 2–4 wppm and strongly depends on the extent of hydrogen saturated trapping sites. The same hydrogen concentration in base and weld metals manifests itself by different extents of brittle fracture, higher in base metal and lower in weld metal as a result of a different number and saturation of trapping sites. The extent of brittle fracture on surface specimens decreases along the hydrogen concentration gradient from the crack tip and with increasing testing temperature. - Highlights: ► Hydrogen effects the fracture toughness of base and weld metal of EUROFER 97 RAFM steel. ► The J0.2 integral values decrease depending on the hydrogen content in the range of 0–4 wppm. ► With increased temperature in the range of 25 °C–120 °C the brittle fracture mode decreases. ► The extent of brittle trans- and inter-granular fracture decreases in the direction of crack propagation. ► Results of this work would help of structural integrity assessment of ITER test blanket module components.

  20. Structure and properties of nano-sized Eurofer 97 steel obtained by hydrostatic extrusion

    International Nuclear Information System (INIS)

    Full text of publication follows: Properties of engineering materials strongly depend on their microstructure. This in particular applies to the size of grains and/or particles in metals, which influence such properties as hardness, flow stress, toughness and creep. Recently, a large interest has been attracted to the so called nano-materials, characterized by the size of grains/particles below 100 nm. Such nano-scaled structures can be obtained in metals by methods of severe plastic deformation, SPD. Among these methods, hydrostatic extrusion offers the potential for producing homogeneous, fully-dense bulk materials in a variety of forms. Hydrostatic extrusion permits also processing of hard-deformable metals (hydrostatic pressure inhibits crack formation) and consolidation of powders. The objective of the present work was to apply hydrostatic extrusion to Eurofer 97 steel - a fusion relevant material. Samples were hydro-statically extruded in a multi-step process with the total true strain of about 4. Microstructure observations via light and transmission electron microscopy revealed significant grain size refinement and changes in carbides size and distribution. This resulted in substantial changes in mechanical properties of the material which were evaluated by hardness measurements, tensile and impact tests. Thermal stability of these properties was also determined. The results are discussed in terms of microstructure properties relationship. Application potential of nano-Eurofer 97 is also discussed. (authors)

  1. Mechanical tests on two batches of oxide dispersion strengthened RAFM steel (EUROFER97)

    International Nuclear Information System (INIS)

    EUROFER97 is a 9CrWVTa reduced-activation ferritic-martensitic (RAFM) steel, modelled after the conventional T91 alloy (9Cr-1Mo-0.2V-0.08Nb); some of the elements in T91 that will transmute in a fusion neutron spectrum into high-energy radiation emitters with long-half life have been selectively replaced by other elements (W has replaced Mo and Ta has replaced Nb). Such replacements do not influence the mechanical properties but are beneficial from a reduced-activation point of view. The latest developments in the ferritic/martensitic steels for nuclear applications tend toward a fine microstructure with small prior austenite grains and a low number of inclusions, in order to achieve an optimal combination of toughness, strength and high-temperature properties. On the other hand, higher operating temperatures may translate into a better efficiency of power reactors; oxide dispersion strengthening (ODS) offers the potential of increasing the operating temperature of RAFM steels from 550 deg. C to about 625 deg. C, while retaining satisfactory mechanical properties. A mechanical characterisation of two ODS versions of EUROFER97 has been carried out at SCK-CEN by means of tensile and instrumented KLST Charpy tests. The two alloys, which contain different weight percentages of Y2O3 (0.3 and 0.5%), have been characterised in two orientations in the 'as-HIPped' state, that is without any post-HIPping heat treatment

  2. Mechanical and microstructural behaviour of Y2O3 ODS EUROFER 97

    International Nuclear Information System (INIS)

    Two small ingots of the steel EUROFER 97, one containing 0.25 wt% Y2O3 and the other Y2O3 free, have been produced by consolidating mechanically milled powder by hot isostatic pressing at 1373 K for 2 h under 200 MPa. For comparison, a third ingot was consolidated under identical conditions but using un-milled EUROFER powder. Microhardness, tensile and Charpy tests, along with TEM observations, have been performed on these materials in the as-HIPed condition and after different heat treatments. The mechanical behaviour and the microstructural characteristics of these materials suggest that the origin of the reduced impact properties of the oxide dispersion strengthened EUROFER could be the premature formation of carbides during quenching following the HIP process. This would be enhanced by the high density of structural defects produced by milling, as these favour the fast diffusion and segregation of carbon

  3. Coincidence Doppler broadening study of Eurofer 97 irradiated in spallation environment

    Science.gov (United States)

    Sabelová, V.; Kršjak, V.; Kuriplach, J.; Dai, Y.; Slugeň, V.

    2015-03-01

    The behavior of transmutation helium during isochronal annealing of irradiated Eurofer 97 was investigated using coincidence Doppler broadening spectroscopy (CDBS). The investigated ferritic martensitic steel was irradiated in 2000 and 2001 in the frame of the STIP-II project at the Swiss neutron spallation source (SINQ) (irradiation with neutrons and protons) at the Paul Scherrer Institute (PSI). During isochronal annealing experiment, coarsening of vacancy clusters and/or growth of helium bubbles was observed at T ⩾ 500 °C. This process causes an increase of low-momentum annihilation events and related increase of the S parameter during thermal treatment of material. On the other hand, the maximum concentration of helium in small vacancy clusters (Vn) was observed after annealing at 400 °C, where an excellent correlation with the calculated CDBS profiles of Vn + Hem clusters was found.

  4. Quantitative TEM analysis of precipitation and grain boundary segregation in neutron irradiated EUROFER 97

    International Nuclear Information System (INIS)

    Characterization of irradiation induced microstructural defects is essential for assessing the applicability of structural steels like the Reduced Activation Ferritic/Martensitic steel EUROFER 97 in upcoming fusion reactors. In this work Transmission Electron Microscopy (TEM) is used to analyze the types and structure of precipitates, and the evolution of their size distributions and densities caused by neutron irradiation to a dose of 32 displacements per atom (dpa) at 330–340 °C in the irradiation experiment ARBOR 1. A significant growth of MX and M23C6 type precipitates is observed after neutron irradiation, while the precipitate density remains unchanged. Hardening caused by MX and M23C6 precipitate growth is assessed by applying the Dispersed Barrier Hardening (DBH) model, and shown to be of minor importance when compared to other irradiation effects like dislocation loop formation. Additionally, grain boundary segregation of chromium induced by neutron irradiation was investigated and detected in irradiated specimens

  5. Influence of the temperature on the tension behaviour of EUROFER97 alloy at high strain rate

    Directory of Open Access Journals (Sweden)

    Cadoni Ezio

    2015-01-01

    Full Text Available This paper presents an experimental investigation on the influence of the temperature on the reduced activation steel Eurofer97 under uniaxial tensile loads at high strain rate. Round undamaged specimens of this material having gauge length 5 mm, diameter 3 mm, were tested in universal machine to obtain its stress-strain relation under quasi-static condition (0.001s−1, and in modified Hopkinson bar to study its mechanical behaviour at high strain rates (300 s−1, 1000 s−1 respectively. The tests at high strain rate were carried out at 450 °C and at nitrogen temperature. Finally, the parameters of the Zerilli-Armstrong constitutive material relationship were obtained.

  6. Structure and properties of nano-sized Eurofer 97 steel obtained by hydrostatic extrusion

    International Nuclear Information System (INIS)

    The objective of the present work was to apply hydrostatic extrusion to Eurofer 97 steel - a fusion relevant material that can be used for structural application in ITER. Samples were hydrostatically extruded in a multi-step process with a total true strain of about 4. Microstructure observations via light and transmission electron microscopy revealed significant grain size refinement from about 400 nm to 90 nm and changes in carbide size and distribution. Microstructure changes resulted in substantial improvement in mechanical properties of the material (the ultimate tensile strength and yield stress increase from 691 MPa to 1769 MPa and 582 MPa to 1641 MPa, respectively) which were evaluated by hardness measurements and tensile tests.

  7. Coincidence Doppler broadening study of Eurofer 97 irradiated in spallation environment

    International Nuclear Information System (INIS)

    The behavior of transmutation helium during isochronal annealing of irradiated Eurofer 97 was investigated using coincidence Doppler broadening spectroscopy (CDBS). The investigated ferritic martensitic steel was irradiated in 2000 and 2001 in the frame of the STIP-II project at the Swiss neutron spallation source (SINQ) (irradiation with neutrons and protons) at the Paul Scherrer Institute (PSI). During isochronal annealing experiment, coarsening of vacancy clusters and/or growth of helium bubbles was observed at T ⩾ 500 °C. This process causes an increase of low-momentum annihilation events and related increase of the S parameter during thermal treatment of material. On the other hand, the maximum concentration of helium in small vacancy clusters (Vn) was observed after annealing at 400 °C, where an excellent correlation with the calculated CDBS profiles of Vn + Hem clusters was found

  8. Effect of helium implantation on mechanical properties of EUROFER97 evaluated by nanoindentation

    Energy Technology Data Exchange (ETDEWEB)

    Roldán, M., E-mail: marcelo.roldan@ciemat.es [National Fusion Laboratory-CIEMAT. Avda. Complutense 40, 28040 Madrid (Spain); Fernández, P. [National Fusion Laboratory-CIEMAT. Avda. Complutense 40, 28040 Madrid (Spain); Rams, J. [Rey Juan Carlos University, C/Tulipán s/n, Móstoles, 28933 Madrid (Spain); Jiménez-Rey, D. [Centre for Micro-Analysis of Materials (CMAM, UAM), C/Faraday 3, 28049 Madrid (Spain); Ortiz, C.J.; Vila, R. [National Fusion Laboratory-CIEMAT. Avda. Complutense 40, 28040 Madrid (Spain)

    2014-05-01

    Helium effects on EUROFER97 mechanical properties were studied by means of nanoindentation. The steel was implanted with He ions in a stair-like profile configuration using energies from 2 to 15 MeV at room temperature. Firstly, a deep nanoindentation study was carried out on as-received state (normalized + tempered) in order to obtain a reliable properties database at the nanometric scale, including aspects such as indentation size effect. The nanoindentation hardness of tests on He implanted samples showed a hardness increase depending on the He concentration. The hardness increase follows the He implantation concentration profile with a good accuracy according to BCA calculations using MARLOWE code, considering the whole volume affected by the nanoindentation tests. The results obtained in this work shown that nanoindentation technique permits to assess any change of hardness properties due to ion implantation.

  9. Metallurgical properties of reduced activation martensitic steel Eurofer'97 in the as-received condition and after thermal ageing

    International Nuclear Information System (INIS)

    This paper describes the microstructural studies and the mechanical testing (hardness, tensile and charpy tests) performed on the Eurofer'97 steel in the as-received condition and after thermal ageing treatments up to 600 deg. C. In addition, fracture toughness tests on the as-received condition have been carried out in order to determine the Master Curve. During the thermal ageing treatments studied (500 deg. C/5000 h and 600 deg. C/1000 h) the general microstructure of the steel (tempered martensite with M23C6 and MX precipitates) remained stable. Only a slight growth of the particles has been observed. In terms of mechanical properties, the Eurofer'97 steel exhibited similar values of tensile properties (tensile and yield strength) and ductile-brittle transition temperature regardless of the material condition studied.

  10. The prediction of size effect on J R curve for Eurofer97 steel by simplified mechanical model

    Czech Academy of Sciences Publication Activity Database

    Stratil, Luděk; Šiška, Filip; Hadraba, Hynek; Dlouhý, Ivo

    Boston : ASME, 2015, s. 1-9. ISBN 978-0-7918-5692-5. [PVP 2015 Pressure Vessels & Piping Conference. Boston (US), 19.07.2015-23.07.2015] R&D Projects: GA MŠk EE2.3.20.0197; GA ČR GJ15-21292Y Institutional support: RVO:68081723 Keywords : Schindler’s model * Eurofer97 * J-R curve * size effect Subject RIV: JL - Materials Fatigue, Friction Mechanics

  11. Thermomechanical analysis of diffusion-bonded tungsten/EUROFER97 with a vanadium interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Basuki, Widodo Widjaja; Dahm, Ralf; Aktaa, Jarir

    2014-12-15

    Earlier basic investigations revealed that diffusion bonding between tungsten and RAFM-steel at a relatively low temperature using a thin low-activation vanadium interlayer having a CTE between that of the parent materials can significantly reduce the residual stresses and produce defect-free bond interfaces. The joint has a high strength as well as sufficient ductility and toughness especially at the test temperature of about 550 °C. To apply this knowledge in fusion power plants, particularly in divertors, an acceptable lifetime of such structural joints is required, since they are exposed to high thermomechanical cyclic loading. To simulate the possible operational conditions of a He-cooled divertor, diffusion-bonded specimens are loaded by thermal cycling in a temperature range between 350 °C and 500 °C and a constant tensile stress based on the calculation of the internal pressure of the divertor thimble. The aim of this experimental work is to check the resistance of the diffusion-bonded W/EUROFER97 against ratcheting during thermomechanical loading and analyze the evolution of microstructures of the joint especially along the bond interfaces.

  12. Quantitative TEM analysis of precipitation and grain boundary segregation in neutron irradiated EUROFER 97

    Energy Technology Data Exchange (ETDEWEB)

    Dethloff, Christian, E-mail: christian.dethloff@kit.edu; Gaganidze, Ermile; Aktaa, Jarir

    2014-11-15

    Characterization of irradiation induced microstructural defects is essential for assessing the applicability of structural steels like the Reduced Activation Ferritic/Martensitic steel EUROFER 97 in upcoming fusion reactors. In this work Transmission Electron Microscopy (TEM) is used to analyze the types and structure of precipitates, and the evolution of their size distributions and densities caused by neutron irradiation to a dose of 32 displacements per atom (dpa) at 330–340 °C in the irradiation experiment ARBOR 1. A significant growth of MX and M{sub 23}C{sub 6} type precipitates is observed after neutron irradiation, while the precipitate density remains unchanged. Hardening caused by MX and M{sub 23}C{sub 6} precipitate growth is assessed by applying the Dispersed Barrier Hardening (DBH) model, and shown to be of minor importance when compared to other irradiation effects like dislocation loop formation. Additionally, grain boundary segregation of chromium induced by neutron irradiation was investigated and detected in irradiated specimens.

  13. Comparative study of helium effects on EU-ODS EUROFER and EUROFER97 by nanoindentation and TEM

    Science.gov (United States)

    Roldán, M.; Fernández, P.; Rams, J.; Jiménez-Rey, D.; Materna-Morris, E.; Klimenkov, M.

    2015-05-01

    Helium effects on EU-ODS EUROFER were studied by means of nanoindentation and TEM. The results were compared with those of EUROFER97. Both steels were implanted in a stair-like profile configuration using energies from 2 MeV (maximum He content ∼750 appm He) to 15 MeV (minimum He ∼350 appm He) at room temperature. The nanoindentation tests on He implanted samples showed a hardness increase that depended on the He concentration. The maximum hardness increase observed at 5 mN was 21% in EU-ODS EUROFER and 41% in EUROFER97; it corresponded with the zone with the highest He concentration which was around 750 appm, according to MARLOWE simulation. In addition, FIB lamellae were prepared from EUROFER97 and EU-ODS EUROFER containing the aforementioned zones with maximum (750 appm) and minimum (300 appm) He. TEM investigations carried out showed small and homogeneously distributed He nanobubbles on both alloys in the zone corresponding with maximum He content. These microstructural features seem to be the cause of the hardness increase measured by nanoindentation.

  14. Effect of mechanical alloying and compaction parameters on the mechanical properties and microstructure of EUROFER 97 ODS steel

    International Nuclear Information System (INIS)

    Oxide dispersion strengthened (ODS) ferritic / martensitic (F/M) steels appear to be promising candidates for the future fusion reactor. Their inherent properties, good thermal conductivity, swelling resistance and low radiation damage accumulation, deriving from the base material EUROFER 97, are further enhanced by the presence of the fine dispersion of oxide particles. They would allow in principle for a higher operating temperature of the fusion reactor, which improves its thermal efficiency. In effect, their strength remains higher than the base material with increasing temperature. Their creep properties are also improved relatively to the base material. It is the pinning of dislocations at dispersed oxide particles that helps to improve the high temperature mechanical properties. EUROFER97 is a reduced activation F/M steel, whose chemical composition is 8.9 wt. % Cr, 1.1 wt. % W, 0.47 wt. % Mn, 0.2 wt. % V, 0.14 wt. % Ta and 0.11 wt. % C and Fe for the balance. A new ODS F/M steel based on EUROFER 97 is developed with the strengthening material as Y2O3 maintained at 0.3wt% based on our past experience. The ODS powder is produced by a different powder metallurgy route. The Eurofer 97 atomized powder with particle sizes around 45 μm is ball milled in argon atmosphere in a planetary ball mill together with Yttria particles with sizes about 10 to 30 nm. The milled powders are now canned in a steel container. They are degassed at 450 oC for 3 hours under a vacuum of 10-5 mbar. The canned sample is sealed in vacuum and finally compacted by hot isostatic pressing (HIP) in argon atmosphere under a pressure of 180 MPa at 1000 oC for 1 hour. Electron microscopy and X-ray diffraction observations are done at regular intervals during ball milling to identify changes in the particle and crystallite size and in particular with the solubility of Yttria in the matrix. Further, The microstructure and mechanical properties of final compacted material is assessed. The size

  15. Studie tvárného mechanismu porušování oceli Eurofer97

    Czech Academy of Sciences Publication Activity Database

    Stratil, Luděk; Hadraba, Hynek; Dlouhý, Ivo

    Brno : Ústav fyziky materiálů, AV ČR, v.v.i, 2012 - (Dlouhý, I.; Švejcar, J.; Šob, M.), s. 59-64 ISBN 978-80-87434-06-2. [Víceúrovňový design pokrokových materiálů 2012. Brno (CZ), 29.11.2012] R&D Projects: GA ČR GD106/09/H035; GA ČR(CZ) GAP108/10/0466 Institutional support: RVO:68081723 Keywords : Eurofer97 * ductile fracture * voids Subject RIV: JL - Materials Fatigue, Friction Mechanics

  16. Comparison of microstructural properties and Charpy impact behaviour between different plates of the Eurofer97 steel and effect of isothermal ageing

    Energy Technology Data Exchange (ETDEWEB)

    Stratil, Ludek [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Zizkova 22, 616 62 Brno (Czech Republic); Hadraba, Hynek, E-mail: hadraba@ipm.cz [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Zizkova 22, 616 62 Brno (Czech Republic); Bursik, Jiri; Dlouhy, Ivo [Institute of Physics of Materials, Academy of Sciences of the Czech Republic, Zizkova 22, 616 62 Brno (Czech Republic)

    2011-09-30

    Highlights: > Two plates of Eurofer97 steel were tested in thermally unaffected and aged state. > The two plates of Eurofer97 differ significantly in mean prior austenite grain size. > The different grain size lead to different transition temperature between the plates. > Thermal ageing applied lead to slight microstructural changes of the Eurofer97. > The microstructural changes caused small shift of transition temperature. - Abstract: The microstructure and fracture properties of the Eurofer97 steel plates of thickness 14 mm and 25 mm were investigated in as-received state and in state after long-term thermal ageing (550 deg. C/5000 h). Detailed microstructure studies were carried out by means of optical light, electron and quantitative electron microscopy. Mechanical properties were evaluated by means of Charpy impact testing and hardness testing and fracture surfaces were fractographically analysed in macro and microscales. The microstructure of the Eurofer97 consisted of tempered martensite with M{sub 23}C{sub 6} and MX precipitates. Microstructure of 14 mm plate was more homogenous and fine grained than 25 mm plate. Due to different microstructure the t{sub DBTT} of thicker plate was on +10 deg. C higher than for 14 mm plate for which reached -60 deg. C. Slight microstructural changes on the level of subgrain consisting of their partial recrystallization and slight carbide coarsening were observed after applied ageing. The isothermal ageing caused evident shift in t{sub DBTT} about +5 deg. C, which was most likely caused by recrystallization of subgrains.

  17. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  18. Effect of 16.3 dpa neutron irradiation on fatigue lifetime of the RAFM steel EUROFER97

    International Nuclear Information System (INIS)

    Low cycle fatigue specimens of the reduced-activation martensitic/ferritic steel EUROFER97 were neutron irradiated at 250 deg. C up to an accumulated dose of 16.3 dpa. After irradiation, the specimens were push-pull fatigue tested under strain-controlled conditions at 250 deg. C to determine the impact of irradiation on lifetime, fracture behavior, and microstructure. The typical cyclic softening of martensitic/ferritic steels was observed. Furthermore, a considerable increase of lifetime after irradiation and subsequent cycling at lower strain amplitudes was remarkable. This behavior was attributed to the homogeneous distribution of stable irradiation-induced dislocation loops and small precipitates acting as barriers for the cyclic motion of dislocations, thereby influencing substantially crack initiation and crack network formation. While in the un-irradiated material push-pull fatigue sweeps the dislocations to the boundaries, a significant fraction of dislocations was fixed at irradiation-induced defects after irradiation and fatigue testing.

  19. Comparison of the low cycle fatigue behaviour of F82H mod. and Eurofer 97 in water coolant

    International Nuclear Information System (INIS)

    A comparative study has been done about the susceptibility to environmentally induced damage of the reduced activation martensitic steels F82H mod and Eurofer 97. Both alloys were found to suffer premature fracture compared to air behaviour, during conventional fully reversed load controlled low cycle fatigue tests, run in high temperature aqueous environment with the alkaline chemistry specified for the lithium lead blanket water coolant. The different steel low cycle fatigue responses in water, especially, the scatter of fatigue lives and fracture modes observed from plate-to-plate and from specimen-to-specimen in F82H and Eurofer, respectively, appeared to coincide with the presence of different inclusion types, size and density. Based on electrochemical and fractographic indexes, the results were discussed with the support of the hydrogen decohesion model, in terms of mutually competitive trap effects on hydrogen diffusion and partitioning among the susceptible cracking sites

  20. Fatique crack growth in EUROFER 97 at different temperatures. Final report, tasks: TW1-TTMS-002, D22 and TW2-TTMS-002a, D22

    Energy Technology Data Exchange (ETDEWEB)

    Aktaa, J.; Lerch, M.

    2005-05-01

    For the assessment of cracks in First Wall structures built from EUROFER 97 of future fusion reactors the fatigue crack behaviour in EUROFER 97 was investigated at room temperature (RT), 300, 500 and 550 C. For this purpose fatigue crack growth tests were performed using CT specimens with two R-ratios, R=0.1 and R=0.5, respectively. Hence, fatigue crack threshold, fatigue crack growth behaviour in the near-threshold range and their dependences on temperature and R-ratio were determined and described using an analytical formula. The fatigue crack threshold showed a monotonic dependence on temperature which is for insignificantly small. The fatigue crack growth behaviour exhibited for a nonmonotonic dependence on temperature which is explained by the decrease of yield stress and the increase of creep damage when increasing the temperature. [German] Zur Beurteilung von Rissen in aus EUROFER 97 gefertigten Strukturen der Ersten Wand zukuenftiger Fusionsreaktoren wurde das Ermuedungsrissverhalten in EUROFER 97 bei Raumtemperatur (RT), 300, 500 und 550 C untersucht. Hierfuer wurden bei jeder Temperatur Ermuedungsrissexperimente an CT-Proben mit zwei unterschiedlichen R-Verhaeltnissen, und durchgefuehrt. Daraus wurden der Ermuedungsrisswiderstand und das Ermuedungsrissverhalten im risswiderstandsnahen Bereich sowie ihre Abhaengigkeiten von der Temperatur und dem R-Verhaeltnis ermittelt und mit analytischen Formeln beschrieben. Der Ermuedungsrisswiderstand zeigte eine monotone Abhaengigkeit von der Temperatur, die bei geringfuegig ist. Das Ermuedungsrissverhalten hingegen wies bei eine nicht-monotone Abhaengigkeit von der Temperatur auf, die auf die Abnahme der Fliessspannung und die Zunahme der Kriechschaedigung mit steigender Temperatur zurueckgefuehrt wird.

  1. A structure–property correlation study of neutron irradiation induced damage in EU batch of ODS Eurofer97 steel

    International Nuclear Information System (INIS)

    Within the framework of the European Fusion Development Agreement (EFDA), an EU batch of oxide-dispersion-strengthened (ODS) Eurofer97 steel samples have been irradiated with neutrons to nominal dose levels of 1 and 3 displacements per atom (dpa) in the High Flux Reactor (HFR) located in Petten to investigate irradiation induced changes in the microstructure and mechanical properties. The results of the irradiation-induced effects on the mechanical properties of this steel are published by Luzginova et al. (2011) [18]. In this paper, post-irradiation examination (PIE) by Transmission Electron Microscopy is performed on the material irradiated at 300 °C to investigate irradiation-induced microstructure dependence on the neutron irradiation dose and relate it to the observed mechanical properties. The results of this study revealed a presence of a high density of black dot damage and self-interstitial atom (SIA) dislocation loops in the microstructure after neutron irradiation to both 1 and 3 dpa dose levels. No dissolution of the ODS particles due to irradiation was observed. These results are discussed in relation with the irradiation hardening and shift in ductile to brittle transition temperature (DBTT) observed in this alloy at the above irradiation conditions

  2. Assessment of irradiation-hardening on Eurofer97' and Zircaloy 2 with punch tests and finite-element modeling

    International Nuclear Information System (INIS)

    We present an assessment of the mechanical constitutive behavior after irradiation for a tempered martensitic steel, Eurofer97', and for Zircaloy by means of small-ball punch tests. For that purpose we use a finite-element model of the punch test device. We take advantage of the model to infer the alloy mechanical constitutive behavior after irradiation. We show that a necessary matching between the experimental and calculated force-deflection curves allows choosing consistently among the proposed constitutive behaviors. We discuss also the limitations of this method. For Zircaloy a complete description of the constitutive behavior in the unirradiated or irradiated condition was not possible in the framework of anisotropic plastic potentials and associated flow rules, since this demands to fully characterize experimentally the anisotropic yield surface and its evolution with plastic strain during punch deformation. However, an approximate description of the initial yielding anisotropy using Hill plastic potential is possible (although not unique) and necessary before an assessment of the irradiation-hardening can be done on a safe basis. Developing a conventional (non-axisymmetric) three-dimensional model was mandatory in order to deal with the problem of anisotropy in Zircaloy

  3. Final Report on Investigations of the influence of Helium concentration and implantation rate on Cavity Nucleation and Growth during neutron irradiation of Fe and EUROFER 97

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Singh, Bachu Narain; Golubov, S.

    EUROFER 97 and for both materials smaller for implantation at 623 K than at 323 K. This lifetime increase is due primarily to the formation of He bubbles. For He doses of 10 – 100 appm cavity sizes and densities in Fe were estimated to be 1.7 – 2.8 nm and 4 - 14×1021 m-3, respectively. Neutron irradiation...... after He implantation in general leads to an increase of both cavity sizes and densities. Estimates of cavity sizes and densities in EUROFER 97 after neutron irradiation with or without prior helium implantation are rather uncertain, but lead to values of the same order as for iron. TEM cannot resolve...... any cavities in Fe or EUROFER 97 after implantation of 100 appm He neither at 323 K nor at 623 K. However, neutron irradiation at 623 K to a dose level of 0.23 dpa in Fe is observed to lead to cavities with sizes of about 4 nm and densities of about 1.5×1021 m- 3. He implantation (100 appm) prior to...

  4. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping. PMID:25427850

  5. Stabilization of boron carbide via silicon doping

    Science.gov (United States)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  6. Final Report on investigations of the influence of helium concentration and implantation rate on cavity nucleation and growth during neutron irradiation of Fe and EUROFER 97

    Energy Technology Data Exchange (ETDEWEB)

    Eldrup, M.; Singh, B.N. (Risoe DTU, Materials Research Div., Roskilde (Denmark)); Golubov, S. (Materials Science and Technology Div., Oak Ridge National Lab., Oak Ridge (United States))

    2010-09-15

    This report presents results of investigations of damage accumulation during neutron irradiation of pure iron and EUROFER 97 steel with or without prior helium implantation. The defect microstructure, in particular the cavities, was characterized using Positron Annihilation Spectroscopy (PAS) and Transmission Electron Microscopy (TEM). The PAS investigations revealed a clear difference between the He implantation effects in Fe and EUROFER 97 at 623 K. For both materials the mean positron lifetimes increased with He dose in the range 1-100 appm, although the increase was stronger for Fe than for EUROFER 97 and for both materials smaller for implantation at 623 K than at 323 K. This lifetime increase is due primarily to the formation of He bubbles. For He doses of 10-100 appm cavity sizes and densities in Fe were estimated to be 1.7-2.8 nm and 4-14 x 10{sup 21} m{sup -3}, respectively. Neutron irradiation after He implantation in general leads to an increase of both cavity sizes and densities. Estimates of cavity sizes and densities in EUROFER 97 after neutron irradiation with or without prior helium implantation are rather uncertain, but lead to values of the same order as for iron. TEM cannot resolve any cavities in Fe or EUROFER 97 after implantation of 100 appm He neither at 323 K nor at 623 K. However, neutron irradiation at 623 K to a dose level of 0.23 dpa in Fe is observed to lead to cavities with sizes of about 4 nm and densities of about 1.5 x 10{sup 21} m{sup -3}. He implantation (100 appm) prior to neutron irradiation results in a cavity density increase to {approx} 1 x 10{sup 22} m{sup -3}. In EUROFER 97 a very inhomogeneous cavity distribution, formed at dislocations and interfaces, is observed after He implantation with subsequent neutron irradiation. In addition, a very low density of very large voids have been observed in Fe (without He) neutron irradiated at 323 K, already at a dose level of 0.036 dpa. Detailed numerical calculations within the

  7. Reduced Activation Ferritic/Martensitic Steel Eurofer 97 as Possible Structural Material for Fusion Devices. Metallurgical Characterization on As-Received Condition and after Simulated Services Conditions

    International Nuclear Information System (INIS)

    Metallurgical Characterization of the reduced activation ferritic/martensitic steel Eurofer'97, on as-received condition and after thermal ageing treatment in the temperature range from 400 degree centigree to 600 degree centigree for periods up to 10.000 h, was carried out. The microstructure of the steel remained stable (tempered martensite with M23 C6 and MX precipitates) after the thermal ageing treatments studied in this work. In general, this stability was also observed in the mechanical properties. The Eurofer'97 steel exhibited similar values of hardness, ultimate tensile stress, 0,2% proof stress, USE and T03 regardless of the investigated material condition. However, ageing at 600 degree centigree for 10.000 ha caused a slight increase in the DBTT, of approximately 23 . In terms of creep properties, the steel shows in general adequate creep rupture strength levels for short rupture times. However, the results obtained up to now for long time creep rupture tests at 500 degree centigree suggests a change in the deformation mechanisms. (Author) 62 refs

  8. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  9. Ni doping of semiconducting boron carbide

    International Nuclear Information System (INIS)

    The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

  10. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  11. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. Tensile and low cycle fatigue properties of EUROFER97-steel after 16.3 dpa neutron irradiation at 523, 623 and 723 K

    International Nuclear Information System (INIS)

    Neutron-irradiated specimens of the reduced-activation tempered martensitic steel EUROFER97 were tested by tensile and low cycle conditions to detect the impact of irradiation on strength and lifetime. The irradiation temperature ranged from 523 to 723 K with an accumulated dose of up to 16.3 dpa. Tensile tests revealed a significant irradiation-induced hardening below 673 K with a peak of ∼430 MPa at 573 K but none was seen at 723 K, as expected. Despite the significant irradiation-induced reduction of uniform elongation, the total elongation is only reduced by about 50% below 673 K. Post-irradiation strain-controlled fatigue tests have been carried out at Tirrad = Ttest = 523, 623 and 723 K. Pronounced cyclic softening was observed in all specimens. At 623 and 723 K, neutron irradiation had no effect on fatigue life within the data scatter. A significant lifetime increase has been observed at Tirrad = Ttest = 523 K that advances with decreasing stress amplitude Δε (1% → 0.5%) up to a factor of ten. Scanning electron microscopy (SEM) analysis revealed ductile fracture and fatigue striations on the fracture surfaces. After push–pull fatigue testing, transmission electron microscopy (TEM) investigations showed the typical sub-cell formation, even at Tirrad = Ttest = 523 K

  13. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  14. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes

  15. Physical properties of CVD boron-doped multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Kartick C. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); Strydom, Andre M. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)], E-mail: amstrydom@uj.ac.za; Erasmus, Rudolph M.; Keartland, Jonathan M. [DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); School of Physics, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); Coville, Neil J. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa)], E-mail: Neil.Coville@wits.ac.za

    2008-10-15

    The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.

  16. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  17. Spontaneous Boron-doping of Graphene at Room Temperature

    Science.gov (United States)

    Pan, Lida; Que, Yande; Du, Shixuan; Gao, Hongjun; Pantelides, Sokrates T.

    2015-03-01

    Doping graphene with boron or nitrogen is an effective way to modify its electronic properties. However, the reaction barrier for introducing these impurities is quite high, making the doping process difficult. In this work, we propose a low-energy reaction route derived from first-principles calculations and subsequently validated by experiments. The calculations show that, when graphene is placed on a ruthenium substrate and exposed to atomic boron, boron atoms can incorporate substitutionally into the graphene sheet with an energy barrier about 0.1 eV, displacing carbon atoms below the graphene sheet where they migrates away. This result suggests that spontaneous doping by boron can take place at room temperature. Following the prediction, we grew high-quality graphene on the Ru(0001) surface and then expose it to B2H6 which decomposes into atomic boron. XPS and STM results indicate that boron dopes graphene substantially without disturbing the graphene lattice, confirming the theoretical predictions. Doping by nitrogen and co-doping by B and N will also be discussed.

  18. Electrochemical synthesis on boron-doped diamond

    International Nuclear Information System (INIS)

    Boron-doped diamond (BDD) is a novel and innovative electrode material. In protic media and particular aqueous electrolytes BDD exhibits a large over potential for the evolution of molecular hydrogen and oxygen. The large chemical window allows a variety of electrochemical conversions to be conducted. The anodic process treatment generates oxyl species directly which are known to be extremely reactive. Usually, the electrochemical mineralization of the organic components in the electrolyte occurs. However, with control of the reactivity of these intermediates the use in electroorganic synthesis can be realized. Until today mostly anodic conversions have been studied at BDD. Since hydroxyl radicals can be efficiently formed and exhibit an enormous oxidative power they are exploited for the electroorganic synthesis. In general, two strategies can be applied to circumvent electrochemical incineration: First, the substrate serves as solvent and partial conversion exploits statistics to gain selectivity for the desired product. This particular approach is useful when the excess of substrate can subsequently be evaporated, and is readily available and inexpensive. The second strategy uses fluorinated alcohols as additives which enlarge the chemical window. The specific role of these fluorinated solvents can be attributed to the stabilization of hydroxyl or methoxyl radicals by supramolecular taming of these intermediates. Moreover, these additives paved the way to the first anodic phenol–arene cross-coupling reaction.

  19. Hydrogen adsorption on boron doped graphene: an {\\it ab initio} study

    OpenAIRE

    Miwa, R. H.; Martins, T B; Fazzio, A.

    2007-01-01

    The electronic and structural properties of (i) boron doped graphene sheets, and (ii) the chemisorption processes of hydrogen adatoms on the boron doped graphene sheets have been examined by {\\it ab initio} total energy calculations.

  20. Photoluminescence properties of boron doped InSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ertap, H., E-mail: huseyinertap@kafkas.edu.tr [Kafkas University, Faculty of Arts and Sciences, Department of Physics, 36100 Kars (Turkey); Bacıoğlu, A. [Hacattepe University, Department of Physics Engineering, 06800, Beytepe, Ankara (Turkey); Karabulut, M. [Kafkas University, Faculty of Arts and Sciences, Department of Physics, 36100 Kars (Turkey)

    2015-11-15

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed.

  1. The local structure of transition metal doped semiconducting boron carbides

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jing; Dowben, P A [Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Behlen Laboratory of Physics, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111 (United States); Luo Guangfu; Mei Waining [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266 (United States); Kizilkaya, Orhan [J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge LA 70806 (United States); Shepherd, Eric D; Brand, J I [College of Engineering, and the Nebraska Center for Materials and Nanoscience, N209 Walter Scott Engineering Center, 17th and Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2010-03-03

    Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C{sub 2}B{sub 10}H{sub 12}) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

  2. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  3. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  4. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Science.gov (United States)

    Zubkov, V. I.; Kucherova, O. V.; Bogdanov, S. A.; Zubkova, A. V.; Butler, J. E.; Ilyin, V. A.; Afanas'ev, A. V.; Vikharev, A. L.

    2015-10-01

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120-150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10-13 down to 2 × 10-17 cm2 was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (˜2 × 10-20 cm2). At T > Troom in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  5. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  6. Boron-doped superlattices and Bragg mirrors in diamond

    OpenAIRE

    Fiori, Alexandre; Bousquet, Jessica; Eon, David; Omnès, Franck; Bellet-Amalric, E.; Bustarret, Etienne

    2014-01-01

    International audience A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflec-tance peak to the wavelength range of diamond color centers, such as NV 0 or...

  7. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  8. Cathodoluminescence of boron nitride nanotubes doped by ytterbium

    International Nuclear Information System (INIS)

    Boron nitride nanotubes (BNNTs) are wide band gap semiconducting material with super thermal and chemical stabilities, which make them an ideal nano-sized host for luminescent ions. In this work, we report an in situ synthesis of Ytterbium (Yb) doped BNNTs using a ball milling and annealing approach. Yb doped BNNTs show more red-light emissions in the cathodoluminescent (CL) spectrum in comparison with pure BNNTs. The light emission is due to the insertion of Yb ions into the nanotube wall as the BNNTs serve as a host and contribute directly to the light emission. The cathodoluminescent image demonstrates strong cathodoluminescent emission of whole Yb doped BNNTs.

  9. Boron doping of silicon using excimer lasers

    International Nuclear Information System (INIS)

    The use of lasers in the doping of semiconductors has been investigated extensively these last years both for photovoltaic and microelectronic applications. In this work, doping of single-crystal silicon in BCl3 ambients using a pulsed UV laser has been studied as a function of laser wavelength and fluence in order to investigate the effects of photochemical decomposition of the BCl3 gas and the effects of thermal decomposition of adsorbed layers on the doping process. Different parameters involved in the process (laser energy density, number of pulses per frame, BCl3 gas pressure) were investigated. The electrical characteristics of the doped layers are discussed

  10. Thermal diffusion boron doping of single-crystal natural diamond

    Science.gov (United States)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  11. Hydrogen adsorption on nitrogen and boron doped graphene

    International Nuclear Information System (INIS)

    Hydrogen adsorption on boron and nitrogen doped graphene is investigated in detail by means of first-principles calculations. A comprehensive study is performed of the structural, electronic, and magnetic properties of chemisorbed hydrogen atoms and atom pairs near the dopant sites. The main effect of the substitutional atoms is charge doping which is found to greatly affect the adsorption process by increasing the binding energy at the sites closest to the substitutional species. It is also found that doping does not induce magnetism despite the odd number of electrons per atom introduced by the foreign species, and that it quenches the paramagnetic response of chemisorbed H atoms on graphene. Overall, the effects are similar for B and N doping, with only minor differences in the adsorption energetics due to different sizes of the dopant atoms and the accompanying lattice distortions. (paper)

  12. Structured boron doped diamond electrodes for determination of dopamine

    Czech Academy of Sciences Publication Activity Database

    Vojs, Marian; Behúl, M.; Michniak, P.; Řeháček, V.; Marton, M.; Veselý, M.; Kromka, Alexander

    Žilina: University of Žilina, 2013 - (Pudiš, D.; Lettrichová, I.; Šušlik, Ĺ.; Kováč jr., J.; Vincze, A.), s. 135-139 ISBN 978-80-554-0689-3. [International Conference on Advances in Electronic and Photonic Technologies. Nový Smokovec (SK), 02.06.2013-05.06.2013] Institutional support: RVO:68378271 Keywords : boron-doped diamond (BDD) * dopamine * nano -structuring Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Intrinsic and boron-doped diamond microstructured for electrochemical batteries

    Czech Academy of Sciences Publication Activity Database

    Kromka, Alexander; Babchenko, Oleg; Rezek, Bohuslav; Ižák, Tibor; Libertínová, Jitka; Hruška, Karel; Nyholm, L.; de Oliviera Jorge, E.

    Prague : Institute of Physics ASCR, 2012 - (Rezek, B.; Kromka, A.), s. 43-44 ISBN 978-80-260-1593-2. [International Workshop on Diamond Nanotechnology and Science Progress. Prague (CZ), 15.06.2011-17.06.2011] Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * intrinsic diamond * boron-doped diamond * surface conductivity * SEM * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Density functional theory prediction for diffusion of lithium on boron-doped graphene surface

    International Nuclear Information System (INIS)

    The density functional theory (DFT) investigation shows that graphene has changed from semimetal to semiconductor with the increasing number of doped boron atoms. Lithium and boron atoms acted as charge contributors and recipients, which attracted to each other. Further investigations show that, the potential barrier for lithium diffusion on boron-doped graphene is higher than that of intrinsic graphene. The potential barrier is up to 0.22 eV when six boron atoms doped (B6C26), which is the lowest potential barrier in all the doped graphene. The potential barrier is dramatically affected by the surface structure of graphene.

  15. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  16. Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond

    Czech Academy of Sciences Publication Activity Database

    Šopík, Břetislav

    2009-01-01

    Roč. 11, č. 10 (2009), 103026/1-103026/10. ISSN 1367-2630 R&D Projects: GA AV ČR IAA100100712 Grant ostatní: GAČR(CZ) GA202/07/0597 Institutional research plan: CEZ:AV0Z10100521 Keywords : superconductivity * boron-doped diamond Subject RIV: BE - Theoretical Physics Impact factor: 3.312, year: 2009

  17. Boron doping of silicon using co-alloying with aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Loelgen, P.; Sinke, W.C.; Leguijt, C.; Weeber, A.W. (ECN Renewable Energy, Petten (Netherlands)); Alkemade, P.F.A. (Delft Institute for Microelectronics and Submicron Technology DIMES, Delft (Netherlands)); Verhoef, L.A. (R and S Renewable Energy Systems, Helmond (Netherlands))

    1994-10-01

    We present a new technique for boron (B) doping of silicon. In this paper we show that a B doping profile of more than 2 [mu]m thickness with a maximum active doping concentration of 3 x 10[sup 19] cm[sup -3] can be formed by a fast (<1 min) alloying process at a temperature of 850C. Thick-film aluminum is used to obtain an alloying and epitaxial regrowth process in accordance with the Al-Si phase diagram. The atomic concentration profile of the B and Al doped Si layer was determined by Secondary Ion Mass Spectrometry. The active doping concentration was measured with an automatic electrochemical capacitance/voltage profiler. By the addition of B to the Al paste, the epitaxially regrown layer is doped with B and Al to the solid solubility of these elements in Si at the particular regrowth temperature. The applicability of this fast low temperature B doping process in Si solar cell processing is discussed. 2 figs., 10 refs.

  18. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  19. Meissner effect in films of ropes of boron-doped single-walled carbon nanotubes; Correlation with applied pressure and boron-doped multi-walled nanotubes

    International Nuclear Information System (INIS)

    Superconductivity in carbon nanotubes (CNTs) is attracting considerable attention. Recently, we have reported successful boron doping into single-walled CNTs (SWNTs) and also revealed its correlation with superconductivity. In the present study, we report results of pressure-applied magnetization measurements in films consisting of ropes of boron-doped SWNTs. It reveals that Tc and magnitude for Meissner effect is mostly independent of applied pressure, while magnitude of graphite diamagnetism drastically increases as pressure increases. We also report result of resistance measurements in the samples and also correlation of boron doped SWNTs with multi-walled CNTs, in which we reported superconductivity previously.

  20. ESR and Microwave Absorption in Boron Doped Diamond Single Crystals

    Science.gov (United States)

    Timms, Christopher

    2015-03-01

    Superconductivity has been reportedly found in boron-doped diamond. Most research to date has only studied superconductivity in polycrystalline and thin film boron-diamonds, as opposed to a single crystal. In fact, only one other group has examined a macro scale boron-doped diamond crystal. Our group has successfully grown large single crystals by using the High Temperature High Pressure method (HTHP) and observed a transition to metallic and superconducting states for high B concentrations. For the present, we are studying BDD crystal using Electron Spin Resonance. We conducted our ESR analysis over a range of temperatures (2K to 300K) and found several types of signals, proving the existence of charge carriers with spin 1/2 in BDD. Moreover, we have found that with increasing B concentrations, from n ~ 1018 cm-3 to n of over 1020 cm-3, the ESR signal changes from that of localized spins to the Dysonian shape of free carriers. The low magnetic field microwave absorption has also been studied in BDD samples at various B concentrations and the clear transition to superconducting state has been found below Tc that ranges from 2K to 4 K depending on concentration and quality of crystal. Sergey Polyakov, Victor Denisov, Vladimir Blank, Ray Baughman, Anvar Zakhidov.

  1. Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD)

    Science.gov (United States)

    Jafari, A.; Ghoranneviss, M.; Salar Elahi, A.

    2016-03-01

    Large-area boron doped graphene was synthesized on Cu foil (as a catalyst) by Hot Filament Chemical Vapor Deposition (HFCVD) using boron oxide powder and ethanol vapor. To investigate the effect of different boron percentages, grow time and the growth mechanism of boron-doped graphene, scanning electron microscopy (SEM), Raman scattering and X-ray photoelectron spectroscopy (XPS) were applied. Also in this experiment, the I-V characteristic carried out for study of electrical property of graphene with keithley 2361 system. Nucleation of graphene domains with an average domain size of ~20 μm was observed when the growth time is 9 min that has full covered on the Cu surface. The Raman spectroscopy show that the frequency of the 2D band down-shifts with B doping, consistent with the increase of the in-plane lattice constant, and a weakening of the B-C in-plane bond strength relative to that of C-C bond. Also the shifts of the G-band frequencies can be interpreted in terms of the size of the C-C ring and the changes in the electronic structure of graphene in the presence of boron atoms. The study of electrical property shows that by increasing the grow time the conductance increases which this result in agree with SEM images and graphene grain boundary. Also by increasing the boron percentage in gas mixer the conductance decreases since doping graphene with boron creates a band-gap in graphene band structure. The XPS results of B doped graphene confirm the existence of boron in doped graphene, which indicates the boron atoms doped in the graphene lattice are mainly in the form of BC3. The results showed that boron-doped graphene can be successfully synthesized using boron oxide powder and ethanol vapor via a HFCVD method and also chemical boron doping can be change the electrical conductivity of the graphene.

  2. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei;

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors...

  3. The boron doping of single crystal diamond for high power diode applications

    Science.gov (United States)

    Nicley, Shannon Singer

    Diamond has the potential to revolutionize the field of high power and high frequency electronic devices as a superlative electronic material. The realization of diamond electronics depends on the control of the growth process of both lightly and heavily boron doped diamond. This dissertation work is focused on furthering the state of the art of boron doped diamond (BDD) growth toward the realization of high power diamond Schottky barrier diodes (SBDs). The achievements of this work include the fabrication of a new dedicated reactor for lightly boron doped diamond deposition, the optimization of growth processes for both heavily and lightly boron doped single crystal diamond (SCD), and the proposal and realization of the corner architecture SBD. Boron doped SCD is grown in microwave plasma-assisted chemical vapor deposition (MPACVD) plasma disc bell-jar reactors, with feedgas mixtures including hydrogen, methane, carbon dioxide, and diborane. Characterization methods for the analysis of BDD are described, including Fourier-transformed infrared spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS) and temperature-dependent four point probe conductivity for activation energy. The effect of adding carbon dioxide to the plasma feedgas for lightly boron doped diamond is investigated. The effect of diborane levels and other growth parameters on the incorporated boron levels are reported, and the doping efficiency is calculated over a range of boron concentrations. The presence of defects is shown to affect the doping uniformity. The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in heavily boron doped SCD deposition is investigated. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron

  4. Reverse annealing of boron doped polycrystalline silicon

    International Nuclear Information System (INIS)

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B+ ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 oC and 650 oC. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency

  5. Reverse annealing of boron doped polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Beop-Jong; Hong, Won-Eui [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Deok Hoi; Uemoto, Tstomu; Kim, Chi Woo [LTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711 (Korea, Republic of); Ro, Jae-Sang [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of)], E-mail: jsang@wow.hongik.ac.kr

    2008-07-31

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B{sup +} ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 {sup o}C and 650 {sup o}C. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency.

  6. Ultrasensitive gas detection of large-area boron-doped graphene

    OpenAIRE

    Lv, Ruitao; Chen, Gugang; Li, Qing; McCreary, Amber; Botello-Méndez, Andrés; Morozov, S. V.; Liang, Liangbo; Declerck, Xavier; Perea-López, Nestor; David A. Cullen; Feng, Simin; Elías, Ana Laura; Cruz-Silva, Rodolfo; Fujisawa, Kazunori; Endo, Morinobu

    2015-01-01

    The gas-sensing performance of graphene could be remarkably enhanced by incorporating dopants into its lattice based on theoretical calculations. However, to date, experimental progress on boron-doped graphene (BG) is still very scarce. Here, we achieved the controlled growth of large-area, high-crystallinity BG sheets and shed light on their electronic features associated with boron dopants at the atomic scale. As a proof-of-concept, it is demonstrated that boron doping in graphene could lea...

  7. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  8. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    International Nuclear Information System (INIS)

    Highlights: → Because of the catalytic effect of boron, graphite-like foams were prepared. → The presence of substitutional boron in carbon foams improves their anodic performance. → The graphitized boron-doped foams provide reversible capacities of 310 mA h g-1. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B4C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to ∼310 mA h g-1 were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  9. Boron doped simulated graphene field effect transistor model

    Science.gov (United States)

    Sharma, Preetika; Kaur, Inderpreet; Gupta, Shuchi; Singh, Sukhbir

    2016-05-01

    Graphene based electronic devices due to its unique properties has transformed electronics. A Graphene Field Effect Transistor (GNRFET) model is simulated in Virtual Nano Lab (VNL) and the calculations are based on density functional theory (DFT). Simulations were performed on this pristine GNRFET model and the transmission spectrum was observed. The graph obtained showed a uniform energy gap of +1 to -1eV and the highest transmission peak at -1.75 eV. To this pristine model of GNRFET, doping was introduced and its effect was seen on the Fermi level obtained in the transmission spectrum. Boron as a dopant was used which showed variations in both the transmission peaks and the energy gap. In this model, first the single boron was substituted in place of carbon and Fermi level showed an energy gap of 1.5 to -0.5eV with the highest transmission peak at -1.3 eV. In another variation in the model, two carbon atoms were replaced by two boron atoms and Fermi level shifted from 2 to 0.25eV. In this observation, the highest transmission peak was observed at -1(approx.). The use of nanoelectronic devices have opened many areas of applications as GFET is an excellent building block for electronic circuits, and is being used in applications such as high-performance frequency doublers and mixers, digital modulators, phase detectors, optoelectronics and spintronics.

  10. In/extrinsic granularity in superconducting boron-doped diamond

    International Nuclear Information System (INIS)

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-xBx diamond:B can exhibit an insulator-to-metal transition (pMott∼2x1020cm-3). Under even heavier boron doping (nB∼1021cm-3), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures TC below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  11. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Torigoe, Kazuhisa, E-mail: ktorigoe@sumcosi.com; Fujise, Jun; Ono, Toshiaki [Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256 (Japan); Nakamura, Kozo [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  12. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 1018 cm−3–1019 cm−3 at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position

  13. Effect of boron-doping on thermoelectric properties of rutile-type titanium dioxide sintered materials

    International Nuclear Information System (INIS)

    Research highlights: → Boron-doped rutile-type TiO2 was prepared by pulsed current sintering method. → The B and TiB2 addition was effective for boron-doping of RTO. → Both electrical resistivity and thermal conductivity decreased using B or TiB2 as a additive. The thermoelectric figure of merit was enhanced by boron-doping. - Abstract: The electrical and thermal transport properties of boron-doped rutile-type TiO2 were investigated. The rutile-type TiO2 powder was mixed with B2O3, TiB2 or B and the mixtures were sintered using the pulse current sintering method at 1473 K. Secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) measurements showed that B or TiB2 addition was effective for boron-doping. The boron was well distributed in the sintered materials and the unit cell volume of rutile increased as the amounts of added B or TiB2 increased. The electrical resistivity and Seebeck coefficient at 300 K decreased with an increase in the unit cell volume indicating that boron addition leads to an increase in the electron concentration. Thermal conductivity at room temperature also decreased with an increase in unit cell volume and as a result the thermoelectric figure of merit for rutile-type TiO2 was enhanced by boron-doping.

  14. Critical boron-doping levels for generation of dislocations in synthetic diamond

    OpenAIRE

    Alegre, Maria De La Paz; Araújo, Daniel; Fiori, Alexandre; Pinero, Jose Carlos; Lloret, Fernando; Villar, Maria Del Pilar; Achatz, Philippe; Chicot, Gauthier; Bustarret, Etienne; F. Jomard

    2014-01-01

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4 /H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the direction and at 3.2 X 1021 at/cm 3 for the one. Strain related effects induced by the doping are shown not to be respon...

  15. Microheater made of heavily boron doped single crystal silicon beam

    International Nuclear Information System (INIS)

    Microheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000 x 300 x 3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 degrees C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate, this area can be electrically isolated from the substrate because of the formation of p-n junction

  16. Boron doped diamond electrodes in voltammetry: new designs and applications (an overview)

    OpenAIRE

    Zavázalová, Jaroslava; Barek, Jiří; Pecková, Karolina

    2014-01-01

    In this overview, the recent progress in the development and applications of bare boron doped diamond electrodes in voltammetry of organic compounds is summarized. Attention is paid to important issues reflected in last five years in electroanalytical studies, e.g. fouling and pretreatment of BDD surface, influence of boron concentration on performance of BDD-based sensors, and application of adsorptive stripping voltammetry.

  17. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance. PMID:27534806

  18. Electrochemical oxygen transfer reaction on synthetic boron-doped diamond thin film electrode

    OpenAIRE

    Marselli, Béatrice; Comninellis, Christos

    2005-01-01

    Synthetic boron-doped diamond thin film is a new promising anode material. Because of its properties (high anodic stability under drastic conditions and wide potential window), it is widely investigated for numerous possible electrochemical applications such as electrosynthesis, preparation of powerful oxidants and electroincineration. In the first part of this work, simple charge transfer was investigated at boron-doped diamond electrode through the study of an outer sphere system in the pot...

  19. Theoretical Calculation on Optimum Si-doping Content in Boron Carbide Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The theoretical expression of the relationship between optimum doping content and crystal structure is presented as well as the preparation methods. By using this expression, the optimum doping content of silicon-doped boron carbide thin film is calculated. The quantitative calculation value is consistent with the experimental results. This theoretical expression is also appropriate to resolve the optimum doping content for other electric materials.

  20. 10B and 11B high-resolution NMR studies on boron-doped diamond

    Science.gov (United States)

    Murakami, M.; Shimizu, T.; Tansho, M.; Takano, Y.; Ishii, S.; Ekimov, E. A.; Sidorov, V. A.; Takegoshi, K.

    2010-12-01

    11B magic-angle spinning (MAS) NMR experiments are applied to B-doped diamond samples prepared by high-pressure and high-temperature methods. From the spectrum, we show that there are at least four boron signal components and the one at 28.5 ppm is ascribed to the substitutional boron in the diamond structure providing the carriers responsible for conductivity. We further apply two-dimensional (2D) NMR to examine 1H dipolar broadening and 11B-11B boron spin diffusion, and candidates purported so far for the excess boron, that is, a boron + hydrogen complex and -B-B- and/or -B-C-B- clusters are negated. Furthermore, we show that 10B MAS NMR is useful to selectively observe the substitutional boron in the diamond structure appearing at 28.5 ppm, whose quadrupolar coupling is much smaller than that of the excess boron at 65.5 ppm.

  1. Properties of boron-doped thin films of polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Merabet, Souad [Electronic Department, Faculty of Science and Technology, University of Jijel, Cité Ouled-Aissa B. P. 98 Jijel, 18 000 Jijel (Algeria)

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  2. Properties of boron-doped thin films of polycrystalline silicon

    International Nuclear Information System (INIS)

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×1020cm−3 has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO2 deposited at temperatures Td ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence 200nm/c−Si> 200nm/SiO2> and 520> 605>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO2) are clearly different

  3. Comparative study of the photocatalytic performance of boron-iron Co-doped and boron-doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    A series of nanosized boron-doped and boron-iron co-doped anatase TiO2 represented as Bx,Fey-TiO2 (x = 1, 3, 5, y = 0, 0.5, 1, 3, 5 in wt%) were synthesized by a modified sol-gel method, and characterized by various spectroscopic and analytical techniques. The presence of boron and/or iron causes a red shift in the absorption band of TiO2. The Bx,Fey-TiO2 systems are very effective catalysts for the degradation of toluene under UV or visible light. All reactions follow pseudo-first-order kinetics with the rate being a function of either the dopants or the light source (UV or visible light). The relative quantity and most importantly the position occupied by dopant were found to be the crucial factors in co-doping with respect to the properties and activity of the final product. In general, boron-doping enhances the reactivity while iron-doping works in an opposite manner, thus to show the following order of reactivity regardless of the light source: Bx-TiO2 > TiO2 > Bx,Fey-TiO2. Under the visible light, however, a reversal in this trend is made depending on the relative amount of iron. Thus, for instance, when y ≤ 5, the trend becomes as follows: Bx-TiO2 > Bx,Fey-TiO2 > TiO2

  4. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    Science.gov (United States)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  5. Magnetostriction of the polycrystalline Fe80Al20 alloy doped with boron

    International Nuclear Information System (INIS)

    Highlights: ► Fe80Al20 polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. ► B stabilizes α-FeAl phase and a coexistence of α-FeAl + Fe3Al improves magnetostriction. ► Presence of Fe2B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe80Al20 polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic α-FeAl and/or Fe3Al and Fe2B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of α-FeAl and a correspondent decrease of the Fe3Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe2B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe80Al20 alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the α-FeAl and Fe3Al phases could be reached.

  6. Structure and electrochemical applications of boron-doped graphitized carbon nanofibers

    Science.gov (United States)

    Yeo, Jae-Seong; Jang, Sang-Min; Miyawaki, Jin; An, Bai; Mochida, Isao; Rhee, Choong Kyun; Yoon, Seong-Ho

    2012-08-01

    Boron-doped graphitized carbon nanofibers (CNFs) were prepared by optimizing CNFs preparation, surface treatment, graphitization and boron-added graphitization. The interlayer spacing (d002) of the boron-doped graphitized CNFs reached 3.356 Å, similar to that of single-crystal graphite. Special platelet CNFs (PCNFs), for which d002 is less than 3.400 Å, were selected for further heat treatment. The first heat treatment of PCNFs at 2800 °C yielded a d002 between 3.357 and 3.365 Å. Successive nitric acid treatment and a second heat treatment with boric acid reduced d002 to 3.356 Å. The resulting boron-doped PCNFs exhibited a high discharge capacity of 338 mAh g-1 between 0 and 0.5 V versus Li/Li+ and 368 mAh g-1 between 0 and 1.5 V versus Li/Li+. The first-cycle Coulombic efficiency was also enhanced to 71-80%. Such capacity is comparable to that of natural graphite under the same charge/discharge conditions. The boron-doped PCNFs also exhibited improved rate performance with twice the capacity of boron-doped natural graphite at a discharge rate of 5 C.

  7. Structure and electrochemical applications of boron-doped graphitized carbon nanofibers

    International Nuclear Information System (INIS)

    Boron-doped graphitized carbon nanofibers (CNFs) were prepared by optimizing CNFs preparation, surface treatment, graphitization and boron-added graphitization. The interlayer spacing (d002) of the boron-doped graphitized CNFs reached 3.356 Å, similar to that of single-crystal graphite. Special platelet CNFs (PCNFs), for which d002 is less than 3.400 Å, were selected for further heat treatment. The first heat treatment of PCNFs at 2800 °C yielded a d002 between 3.357 and 3.365 Å. Successive nitric acid treatment and a second heat treatment with boric acid reduced d002 to 3.356 Å. The resulting boron-doped PCNFs exhibited a high discharge capacity of 338 mAh g−1 between 0 and 0.5 V versus Li/Li+ and 368 mAh g−1 between 0 and 1.5 V versus Li/Li+. The first-cycle Coulombic efficiency was also enhanced to 71–80%. Such capacity is comparable to that of natural graphite under the same charge/discharge conditions. The boron-doped PCNFs also exhibited improved rate performance with twice the capacity of boron-doped natural graphite at a discharge rate of 5 C. (paper)

  8. Local atomic and electronic structure of boron chemical doping in monolayer graphene.

    Science.gov (United States)

    Zhao, Liuyan; Levendorf, Mark; Goncher, Scott; Schiros, Theanne; Pálová, Lucia; Zabet-Khosousi, Amir; Rim, Kwang Taeg; Gutiérrez, Christopher; Nordlund, Dennis; Jaye, Cherno; Hybertsen, Mark; Reichman, David; Flynn, George W; Park, Jiwoong; Pasupathy, Abhay N

    2013-10-01

    We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant. Density functional theory calculations indicate that boron dopants interact strongly with the underlying copper substrate while nitrogen dopants do not. The local bonding differences between graphitic boron and nitrogen dopants lead to large scale differences in dopant distribution. The distribution of dopants is observed to be completely random in the case of boron, while nitrogen displays strong sublattice clustering. Structurally, nitrogen-doped graphene is relatively defect-free while boron-doped graphene films show a large number of Stone-Wales defects. These defects create local electronic resonances and cause electronic scattering, but do not electronically dope the graphene film. PMID:24032458

  9. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  10. Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan; Berg, Rolf W.; Linnarsson, Margareta; Kamiyama, Satoshi; Lu, Zhaoyue; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Haiyan

    Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in...

  11. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan; Berg, Rolf W.; Linnarsson, Margareta; Kamiyama, Satoshi; Lu, Zhaoyue; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Haiyan

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be...

  12. Optical and electrical properties of undoped and boron doped zinc oxide synthesized by chemical route

    International Nuclear Information System (INIS)

    We have synthesized and studied the boron doped ZnO nanostructure thin films. The crystallinity of undoped and boron (B) doped ZnO (BZO) has been studied from XRD results. Using the Debye-Scherrer Formula, the grain size has been evaluated, which was found to decrease with increased doping concentration. The optical and electrical properties of (1, 3, 5 wt%) B-doped ZnO (BZO) has been investigated with reference to the undoped counterpart. The UV-VIS spectroscopic analysis revealed that the transmittance for undoped ZnO is maximum and it decreases with doping up to 3% but increases for 5% BZO. The dark as well as photo current–voltage (I–V) characteristics have been investigated in details and the changes occurred in the I-V characteristics with doping concentration as well as under illumination are also quite significant

  13. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    Science.gov (United States)

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  14. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  15. Understanding Persulfate Production at Boron Doped Diamond Film Anodes

    International Nuclear Information System (INIS)

    This research used molecular modeling and rotating disk electrode experiments (RDE) to investigate possible reaction pathways for persulfate production via electrolysis of sulfuric acid solutions using boron doped diamond (BDD) film anodes. Density functional theory (DFT) modeling indicated that uncatalyzed oxidation of SO42− and HSO4− occurs at lower potentials than water oxidation, and that sulfate radical species (SO4−• and HSO4• ) may be produced via direct electron transfer, or via reaction with hydroxyl radicals. The RDE experiments indicated that rates of persulfate generation were strongly dependent of the condition of the electrode surface, and that aged electrode surfaces favored water oxidation over direct SO42− and HSO4− oxidation. Combination of sulfate radical species in solution is the lowest energy pathway for persulfate production. Sulfate radical species may also react with radical sites on the electrode surface and produce chemisorbed intermediates that can stabilize sulfate radical species. Reaction of the chemisorbed intermediates with a bisulfate radical can produce persulfate via a surface catalyzed pathway. However, the activation barriers for this pathway are much higher than those for persulfate production via solution phase species

  16. Pyrolytic synthesis of boron-doped graphene and its application as electrode material for supercapacitors

    International Nuclear Information System (INIS)

    Highlights: • Boron-doped graphene was prepared by pyrolysis of graphene oxide with boric acid at 900 °C under an argon atmosphere. • The boron doping content reached the highest value of 4.7% after 3 h of pyrolysis at 900 °C. • The BG-900-3h electrode exhibited the highest specific capacitance of 172.5 F g−1 at 0.5 A g−1 and maintained 96.5% of initial capacity after a continuous of 5000 times cycling. -- Abstract: Chemical doping with foreign atoms is an effective approach to intrinsically modify the properties of the carbon materials. Herein, boron-doped graphene (BG) was prepared through pyrolysis of graphene oxide (GO) with boric acid (H3BO3) in an argon atmosphere at 900 °C. Both boron-doping and reduction of GO to graphene were simultaneously achieved under the thermal treatment processing. Namely, at high temperature condition, H3BO3 was converted into boron oxide (B2O3) accompanied by diffusing B2O3 vapor into the graphene nanosheets, then boron atoms can replace the carbon atoms inside the graphene layers and thereby substitutionally doped into the graphene lattice. The boron content in BG increased with prolonging the reaction time and reached the highest value of 4.7% after 3 h of pyrolysis, which in turn affected their electrochemical properties. The as-prepared electrode of BG-900-3h exhibits the highest capacitive behavior (172.5 F g−1, 0.5 A g−1) and superior cycling stability (maintaining 96.5% of initial capacity after 5000 times of cycling). Remarkably, the boron-doping increased the capacitance of BG-900-3h by about 80% compared to pristine graphene. These results imply that the doping of boron into graphene lattice induces remarkable performance enhancement, and thus make the doped materials superior to those of pristine graphene as electrode materials for supercapacitors

  17. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  18. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    International Nuclear Information System (INIS)

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration nc for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers (∼ 500 cm-1) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance gc. The granularity also influences significantly the superconducting properties by introducing the superconducting gap Δ in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the first time in aluminum-doped

  19. Tribological properties of undoped and boron-doped nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Undoped and boron-doped nanocrystalline (NCD) diamond films were deposited on mirror polished Ti-6Al-4V substrates in a Microwave Plasma Assisted Chemical Vapor Deposition system. Sliding wear tests were conducted in ambient air with a nanotribometer. A systematic study of the tribological properties for both undoped and boron-doped NCD films were carried out. It was found for diamond/diamond sliding, coefficient of friction decreases with increasing normal loads. It was also found that the wear rate of boron-doped NCD films is about 10 times higher than that of undoped films. A wear rate of ∼ 5.2 x 10-9 mm3/Nm was found for undoped NCD films. This value is comparable to the best known value of that of polished polycrystalline diamond films. Although no surface deformation, film delamination or micro-cracking were observed for undoped films, boron-doped NCD film undergoes a critical failure at a normal stress of 2.2 GPa, above which surface deformation is evident. Combined with high hardness and modulus, tunable conductivity and improved open air thermal stability, boron-doped nanocrystalline diamond film has tremendous potentials for applications such as Atomic Force Microscope probes, Micro-Electro-Mechanical System devices and biomedical sensors

  20. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  1. Boron-doped MnO2/carbon fiber composite electrode for supercapacitor

    International Nuclear Information System (INIS)

    Highlights: • Interstitial ion in MnO2 lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO2/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO2/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO2 crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO2 lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO2 still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn2+ and the absence of active site on the outer surface

  2. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  3. Formation of Boron-Carbon Nanosheets and Bilayers in Boron-Doped Diamond: Origin of Metallicity and Superconductivity.

    Science.gov (United States)

    Polyakov, S N; Denisov, V N; Mavrin, B N; Kirichenko, A N; Kuznetsov, M S; Martyushov, S Yu; Terentiev, S A; Blank, V D

    2016-12-01

    The insufficient data on a structure of the boron-doped diamond (BDD) has frustrated efforts to fully understand the fascinating electronic properties of this material and how they evolve with doping. We have employed X-ray diffraction and Raman scattering for detailed study of the large-sized BDD single crystals. We demonstrate a formation of boron-carbon (B-C) nanosheets and bilayers in BDD with increasing boron concentration. An incorporation of two boron atoms in the diamond unit cell plays a key role for the B-C nanosheets and bilayer formation. Evidence for these B-C bilayers which are parallel to {111} planes is provided by the observation of high-order, super-lattice reflections in X-ray diffraction and Laue patterns. B-C nanosheets and bilayers minimize the strain energy and affect the electronic structure of BDD. A new shallow acceptor level associated with B-C nanosheets at ~37 meV and the spin-orbit splitting of the valence band of ~6 meV are observed in electronic Raman scattering. We identified that the superconducting transitions occur in the (111) BDD surfaces only. We believe that the origin of Mott and superconducting transitions is associated with the two-dimensional (2D) misfit layer structure of BDD. A model for the BDD crystal structure, based on X-ray and Raman data, is proposed and confirmed by density functional theoretical calculation. PMID:26754937

  4. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Yin, H., E-mail: hyin@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Ziemann, P. [Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)

    2014-06-23

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  5. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

    International Nuclear Information System (INIS)

    We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH3) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B2H6) molecules. Dependency of properties of doped layers on catalyzer temperature (Tcat) and substrate temperature (Ts) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at Ts = 80 °C for Tcat over 800 °C when c-Si is exposed to B2H6 cracked species for a few minutes, and that the heat of substrate over 300 °C is likely to help for B doping contrary to P doping

  6. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  7. Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

    International Nuclear Information System (INIS)

    Highlights: • Thermal treatment of boron phosphate with LiFePO4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g-1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO4, FePO4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO4, possibly doped with a low amount of boron, ii) FePO4 and iii) an amorphous layer based on Li4P2O7-derived material that surrounds the phosphate particles. The thermal treatment with BPO4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B6-LiFePO4, provided close to 150 and 140 mAhg-1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

  8. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Energy Technology Data Exchange (ETDEWEB)

    Alegre, M. P., E-mail: maripaz.alegre@uca.es; Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P. [Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  9. Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

    International Nuclear Information System (INIS)

    Graphical abstract: Representation of the electrical charge distributions of boron-doped diamond. - Highlights: • DFT calculations of boron doping in diamond films using VASP codes. • Electron charge distributions using TDOS/PDOS for B-doped diamond. • B–C bond populations and bond lengths determined to verify structure. • Creation of impurity states in band gap region enhances conductivity. • DFT calculations verify our experimental results for B-doped diamond. - Abstract: Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B–C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B–C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is

  10. Detecting CO, NO and NO2 gases by Boron-doped graphene nanoribbon molecular devices

    Science.gov (United States)

    Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

    2016-07-01

    Combining nonequilibrium Green's function method and density functional theory, an azulene-like dipole molecule sandwiched between two graphene nanoribbon (GNR) electrodes are explored to gas sensors. Both the pristine zigzag edged GNR and Boron-doped armchair-edged GNR are considered in this study. It shows that certain specific toxic molecules CO, NO and NO2 would adsorb on the doped Boron atoms of the GNR, resulting in a dramatic change in the current-voltage profile. Changes in the subbands of electrodes, induced by gas adsorption, are responsible for the variation of current. The devices are thus demonstrated to be sensitive nanosensors for these toxic gases.

  11. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    OpenAIRE

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surface to form a very slow growing amorphous layer of pure B (α-B). The electrical properties of the as-deposited α- B/BxSi stack have been studied by fabricating and measuring diodes where the B depos...

  12. Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes.

    Science.gov (United States)

    Matsumoto, R; Sasama, Y; Fujioka, M; Irifune, T; Tanaka, M; Yamaguchi, T; Takeya, H; Takano, Y

    2016-07-01

    A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression. PMID:27475610

  13. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Auttasit Tubtimtae; Suwanna Sheangliw; Kritsada Hongsith; Supab Choopun

    2014-10-01

    We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of ( ℎ )2 vs ℎ with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

  14. Magnetostriction of the polycrystalline Fe{sub 80}Al{sub 20} alloy doped with boron

    Energy Technology Data Exchange (ETDEWEB)

    Bormio-Nunes, Cristina, E-mail: cristina@demar.eel.usp.br [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Teodoro dos Santos, Claudio; Botani de Souza Dias, Mateus [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [Institut fuer Festkoerperphysik, TU Dresden, D-01062 Dresden (Germany)

    2012-10-25

    Highlights: Black-Right-Pointing-Pointer Fe{sub 80}Al{sub 20} polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. Black-Right-Pointing-Pointer B stabilizes {alpha}-FeAl phase and a coexistence of {alpha}-FeAl + Fe{sub 3}Al improves magnetostriction. Black-Right-Pointing-Pointer Presence of Fe{sub 2}B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe{sub 80}Al{sub 20} polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic {alpha}-FeAl and/or Fe{sub 3}Al and Fe{sub 2}B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of {alpha}-FeAl and a correspondent decrease of the Fe{sub 3}Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe{sub 2}B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe{sub 80}Al{sub 20} alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the {alpha}-FeAl and Fe{sub 3}Al phases could be reached.

  15. DFT study on the structural and electronic properties of Pt-doped boron nitride nanotubes

    Science.gov (United States)

    Vessally, E.; Dehbandi, B.; Edjlali, Ladan

    2016-06-01

    First-principles calculations based on density functional theory were carried out to investigate the structural and electronic properties of Pt substitution-doped boron nitride (BN) nanotubes. The electronic and structural properties were studied for substituted Pt in the boron and the nitrogen sites of the (BN) nanotube. The band gap significantly diminishes to 2.095 eV for Pt doping at the B site while the band gap diminishes to 2.231 eV for Pt doping at the N site. The band density increases in both the valence band and the conduction band after doping. The effects of the hardness and softness group 17 (halogen elements) were calculated by density functional theory (DFT).

  16. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  17. Resonance of graphene nanoribbons doped with nitrogen and boron: a molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Ye Wei

    2014-05-01

    Full Text Available Based on its enticing properties, graphene has been envisioned with applications in the area of electronics, photonics, sensors, bio-applications and others. To facilitate various applications, doping has been frequently used to manipulate the properties of graphene. Despite a number of studies conducted on doped graphene regarding its electrical and chemical properties, the impact of doping on the mechanical properties of graphene has been rarely discussed. A systematic study of the vibrational properties of graphene doped with nitrogen and boron is performed by means of a molecular dynamics simulation. The influence from different density or species of dopants has been assessed. It is found that the impacts on the quality factor, Q, resulting from different densities of dopants vary greatly, while the influence on the resonance frequency is insignificant. The reduction of the resonance frequency caused by doping with boron only is larger than the reduction caused by doping with both boron and nitrogen. This study gives a fundamental understanding of the resonance of graphene with different dopants, which may benefit their application as resonators.

  18. Ultrasensitive gas detection of large-area boron-doped graphene

    Science.gov (United States)

    Lv, Ruitao; Chen, Gugang; Li, Qing; McCreary, Amber; Botello-Méndez, Andrés; Morozov, S. V.; Declerck, Xavier; Perea-López, Nestor; Cullen, David A.; Feng, Simin; Elías, Ana Laura; Cruz-Silva, Rodolfo; Fujisawa, Kazunori; Endo, Morinobu; Kang, Feiyu; Charlier, Jean-Christophe; Meunier, Vincent; Pan, Minghu; Harutyunyan, Avetik R.; Novoselov, Konstantin S.; Terrones, Mauricio

    2015-01-01

    Heteroatom doping is an efficient way to modify the chemical and electronic properties of graphene. In particular, boron doping is expected to induce a p-type (boron)-conducting behavior to pristine (nondoped) graphene, which could lead to diverse applications. However, the experimental progress on atomic scale visualization and sensing properties of large-area boron-doped graphene (BG) sheets is still very scarce. This work describes the controlled growth of centimeter size, high-crystallinity BG sheets. Scanning tunneling microscopy and spectroscopy are used to visualize the atomic structure and the local density of states around boron dopants. It is confirmed that BG behaves as a p-type conductor and a unique croissant-like feature is frequently observed within the BG lattice, which is caused by the presence of boron-carbon trimers embedded within the hexagonal lattice. More interestingly, it is demonstrated for the first time that BG exhibits unique sensing capabilities when detecting toxic gases, such as NO2 and NH3, being able to detect extremely low concentrations (e.g., parts per trillion, parts per billion). This work envisions that other attractive applications could now be explored based on as-synthesized BG. PMID:26575621

  19. STURCTURAL CHARACTERISTICS AND QUANTUM CHEMISTRY CALCULATION OF Al-DOPED BORON CARBIDES

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Structural characteristics, chemical bonds and thermoelectric properties of Al-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Al atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Al to substitute B or C atom in the centers of the chain or in the icosahedra. A representative structural unit containing an Al atom is [C-B-Al]ε+-[B11C]ε-, while the structural unit without Al is [C-B-B(C)]ε--[B11C]ε+, and the coexistence of these two different structural units makes the electrical conductivity increased. As the covalent bond of Al-B or Al-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Al is added into boron carbides. With the electrical conductivity increasing and the thermal conductivity decreases, Al doping has significant effect on thermoelectric properties of boron carbides.

  20. Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

    International Nuclear Information System (INIS)

    Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC3 island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations (3 island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

  1. Mg-doping experiment and electrical transport measurement of boron nanobelts

    International Nuclear Information System (INIS)

    We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10-3 (Ω cm)-1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10-3 (cm2 Vs-1) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

  2. Biocompatibility of nanostructured boron doped diamond for the attachment and proliferation of human neural stem cells

    Science.gov (United States)

    Taylor, Alice C.; Vagaska, Barbora; Edgington, Robert; Hébert, Clément; Ferretti, Patrizia; Bergonzo, Philippe; Jackman, Richard B.

    2015-12-01

    Objective. We quantitatively investigate the biocompatibility of chemical vapour deposited (CVD) nanocrystalline diamond (NCD) after the inclusion of boron, with and without nanostructuring. The nanostructuring method involves a novel approach of growing NCD over carbon nanotubes (CNTs) that act as a 3D scaffold. This nanostructuring of BNCD leads to a material with increased capacitance, and this along with wide electrochemical window makes BNCD an ideal material for neural interface applications, and thus it is essential that their biocompatibility is investigated. Approach. Biocompatibility was assessed by observing the interaction of human neural stem cells (hNSCs) with a variety of NCD substrates including un-doped ones, and NCD doped with boron, which are both planar, and nanostructured. hNSCs were chosen due to their sensitivity, and various methods including cell population and confluency were used to quantify biocompatibility. Main results. Boron inclusion into NCD film was shown to have no observable effect on hNSC attachment, proliferation and viability. Furthermore, the biocompatibility of nanostructured boron-doped NCD is increased upon nanostructuring, potentially due to the increased surface area. Significance. Diamond is an attractive material for supporting the attachment and development of cells as it can show exceptional biocompatibility. When boron is used as a dopant within diamond it becomes a p-type semiconductor, and at high concentrations the diamond becomes quasi-metallic, offering the prospect of a direct electrical device-cell interfacing system.

  3. Structural characteristics and quantum chemistry calculation of Si-doped boron carbides

    International Nuclear Information System (INIS)

    Structural characteristics, chemical bonds and thermoelectric properties of Si-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Si atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Si to substitute B or C atom in the centers of chain or in the icosahedra. A representative structural unit containing a Si atom is [C-B-Si]ε+-[B11C]ε-, while the structural unit without Si is [C-B-B(C)]δ'-[B11C]δ+, and the coexistence of these two different structural units makes the electrical conductivity increases. As the covalent bond of Si-B or Si-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Si is added into boron carbides. With the electrical conductivity increases and the thermal conductivity decreases, Si doping has significant effect on thermoelectric properties of boron carbides

  4. Delta-doping of boron atoms by photoexcited chemical vapor deposition

    International Nuclear Information System (INIS)

    Boron delta-doped structures in Si crystals were fabricated by means of photoexcited chemical vapor deposition (CVD). Core electronic excitation with high-energy photons ranging from vacuum ultraviolet to soft x rays decomposes B2H6 molecules into fragments. Combined with in situ monitoring by spectroscopic ellipsometry, limited number of boron hydrides can be delivered onto a Si(100) surface by using the incubation period before the formation of a solid boron film. The boron-covered surface is subsequently embedded in a Si cap layer by Si2H6 photo-excited CVD. The crystallinity of the Si cap layer depended on its thickness and the substrate temperature. The evaluation of the boron depth profile by secondary ion mass spectroscopy revealed that boron atoms were confined within the delta-doped layer at a concentration of 2.5 x 1020 cm-3 with a full width at half maximum of less than 9 nm, while the epitaxial growth of a 130-nm-thick Si cap layer was sustained at 420 deg. C.

  5. A multiple quantum NMR (MQNMR) study of hydrogen microstructure in boron doped a-Si:H

    International Nuclear Information System (INIS)

    In this paper, an IR and multiple quantum NMR (MQNMR) study of hydrogen microstructure in three boron doped a-Si:H is discussed. The total Si-bonded H content of all films was 6.5 ± 1.0 at. % as determined by the 640 cm-1 IR wagging mode, but their boron content, which was determined by secondary ion mass spectrometry, ranged from 0.02 to 0.3 at %. The number of correlated hydrogen, as measured at a preparation time of 600 μs, was found to be more weakly dependent on the boron content than previously observed in phosphorous-doped glow-discharge films. Upon annealing at 220 degrees C the MQNMR spectrum show a moderate increase in the number of correlated hydrogen in all three samples

  6. Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Kavan, Ladislav

    2015-01-01

    Roč. 55, MAY 2015 (2015), s. 70-76. ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Boron doped diamond * Electrochemical impedance spectroscopy * Aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 1.919, year: 2014

  7. A hydrophobic three-dimensionally networked boron-doped diamond electrode towards electrochemical oxidation.

    Science.gov (United States)

    He, Yapeng; Lin, Haibo; Wang, Xue; Huang, Weimin; Chen, Rongling; Li, Hongdong

    2016-06-28

    A boron-doped diamond electrode with a three-dimensional network was fabricated on a mesh titanium substrate. Properties such as higher surface area, enhanced mass transfer and a hydrophobic surface endowed the prepared electrode with excellent electrochemical oxidation ability towards contaminants. PMID:27264247

  8. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  9. NANOCRYSTALLINE BORON-DOPED DIAMOND: ELECTROCHEMICAL AND INSITU RAMAN SPECTROELECTROCHEMICAL CHARACTERIZATION

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Frank, Otakar; Petrák, Václav; Tarábková, Hana; Bouša, Milan; Nesládek, M.; Kavan, Ladislav

    Cancún: European Materials Research Society, 2011. S17-16. [International Materials Research Congress IMRC /20./. 13.08.2011-19.08.2011, Cancún] Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100520 Keywords : nanocrystalline boron-doped diamond * electrochemistry Subject RIV: CG - Electrochemistry

  10. Spectral Sensitization of Nanocrystalline Boron-Doped Diamond Electrode for Application in Photoelectrochemical Solar Cells

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Vlčková Živcová, Zuzana; Krýsová, Hana; Petrák, Václav; Bartoň, Jan; Cígler, Petr; Nesládek, M.

    San Francisco: Material Research Society, 2015. [2015 MRS Spring Meeting & Exhibit. Program: Symposium R—Photoactive Nanoparticles and Nanostructures. 06.04.2015-10.04.2015, San Francisco] R&D Projects: GA ČR GA13-31783S Institutional support: RVO:68378271 ; RVO:61388955 ; RVO:61388963 Keywords : nanocrystalline boron doped diamond * electrochemistry * photoelectrochemistry Subject RIV: CG - Electrochemistry

  11. Nanocrystalline Boron-doped Diamond: Spectro /Photo/ Electrochemical Properties and Prospective Applications in Solar Cells

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Vlčková Živcová, Zuzana; Krýsová, Hana; Petrák, Václav; Janda, Pavel; Tarábková, Hana; Nesládek, Miloš

    Barcelona: Phantoms Foundation, 2014. s. 106-106. [Trends in Nanotechnology 2014. 27.10.2014-31.10.2014, Barcelona] R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : nanocrystalline boron-doped diamond * electrochemistry * dye-sensitized solar cell Subject RIV: CG - Electrochemistry

  12. Visible-light sensitization of boron-doped nanocrystalline diamond through non-covalent surface modification

    Czech Academy of Sciences Publication Activity Database

    Krýsová, Hana; Vlčková Živcová, Zuzana; Bartoň, Jan; Petrák, Václav; Nesladek, M.; Cígler, Petr; Kavan, Ladislav

    2015-01-01

    Roč. 17, č. 2 (2015), s. 1165-1172. ISSN 1463-9076 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:61388963 ; RVO:68378271 Keywords : nanocrystallines * visible-light sensitization * boron-doped diamond Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.493, year: 2014

  13. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH electro

  14. Voltammetric determination of wedelolactone, an anti-HIV herbal drug, at boron-doped diamond electrode

    Indian Academy of Sciences (India)

    Sachin Saxena; Ratnanjali Shrivastava; Soami P Satsangee

    2015-05-01

    Boron-doped diamond electrode has been utilized for the study of electrochemical behaviour of an anti-HIV herbal drug wedelolactone in Britton-Robinson buffer (pH-2.5) by square-wave and cyclic voltammetry techniques. The response characteristics of cyclic voltammetry and square wave voltammetry showed a remarkable increase in the anodic peak current and electrochemical impedance spectroscopy revealed a lowering in charge transfer resistance at the boron-doped diamond electrode as compared to the glassy carbon electrode that can be attributed to the higher sensitivity of boron-doped diamond sensor. Cyclic voltammetry at the boron-doped diamond surface revealed the oxidation of wedelolactone with two oxidation peaks (P1 and P2) with Ep1 = 0.4V and Ep2 =1.00 V with scan rate varying from 10 - 220 mV/s and exhibits diffusion-controlled process. Based on the electrochemical measurements, a probable oxidation mechanism has been deduced and the electrode dynamics parameters have been evaluated. The effect of concentration on the peak currents of wedelolactone was found to have a linear relationship within the concentration range of 50–700 ng/mL. The LOD and LOQ were found to be 43.87 and 132.93 ng/mL respectively. The applicability of the proposed method was further scrutinized by the successful determination of wedelolactone in real plant samples.

  15. Electrochemical growth of polypyrrole on boron doped diamond with various surface termination

    Czech Academy of Sciences Publication Activity Database

    Ukraintsev, Egor; Kromka, Alexander; Janssen, W.; Haenen, K.; Rezek, Bohuslav

    Hasselt : SBDD XVIII, 2013. s. 100-100. [Hasselt Diamond Workshop 2013 - SBDD XVIII. 27.02.2013 - 01.03. 2013, Hasselt] Institutional support: RVO:68378271 Keywords : boron doped diamond * hydrogen terminated diamond * oxygen terminated diamond * polypyrrole * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism

  16. Platinum–boron doped graphene intercalated by carbon black for cathode catalyst in proton exchange membrane fuel cell

    International Nuclear Information System (INIS)

    In order to enhance the electrochemical properties, especially durability and cell performance in proton exchange membrane fuel cell, electron deficient boron is doped into graphene, followed by deposition of Pt nanoparticles. Successful synthesis of Pt-boron doped graphene (Pt–B–Gr) by pyrolytic process is confirmed by X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and Transmission electron microscopy analyses. Pt–B–Gr is intercalated by different amount of CB (carbon black) based on Pt–B–Gr/CBx (x = 0.0, 0.2, 0.3, 0.4) and applied to cathode in proton exchange membrane fuel cell. The ECSA (electrochemical active surface area) is increased with CB content up to 30 wt.% of Pt–B–Gr from 21.4 to 33.6 m2 g−1 beyond which it is rather slightly decreased to 29.6 m2 g−1. The ADT (accelerated durability test) is conducted where the ECSA is compared at every 400 cycles up to 1200 cycles for durability. The result exhibits that boron doping into graphene significantly enhances the durability. It might be attributed to more tight binding between Pt and B due to the electron transfer from graphene to boron. The cell performance is enhanced and it is attributed to the combined effect of B-doping and intercalation. - Highlights: • Graphene was successfully doped with boron using pyrolytic process. • Pt nanoparticles were deposited onto boron-doped graphene. • Pt-boron doped graphene was intercalated by carbon black to prevent restacking. • Boron doping significantly enhanced the durability. • The combined effect of boron doping and intercalation enhanced the cell performance

  17. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  18. Boosting the Boron Dopant Level in Monolayer Doping by Carboranes.

    Science.gov (United States)

    Ye, Liang; González-Campo, Arántzazu; Núñez, Rosario; de Jong, Michel P; Kudernac, Tibor; van der Wiel, Wilfred G; Huskens, Jurriaan

    2015-12-16

    Monolayer doping (MLD) presents an alternative method to achieve silicon doping without causing crystal damage, and it has the capability of ultrashallow doping and the doping of nonplanar surfaces. MLD utilizes dopant-containing alkene molecules that form a monolayer on the silicon surface using the well-established hydrosilylation process. Here, we demonstrate that MLD can be extended to high doping levels by designing alkenes with a high content of dopant atoms. Concretely, carborane derivatives, which have 10 B atoms per molecule, were functionalized with an alkene group. MLD using a monolayer of such a derivative yielded up to ten times higher doping levels, as measured by X-ray photoelectron spectroscopy and dynamic secondary mass spectroscopy, compared to an alkene with a single B atom. Sheet resistance measurements showed comparably increased conductivities of the Si substrates. Thermal budget analyses indicate that the doping level can be further optimized by changing the annealing conditions. PMID:26595856

  19. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  20. Electronic structure of boron doped diamond: An x-ray spectroscopic study

    OpenAIRE

    Glans, P.-A.; Learmonth, T.; Smith, K. E.; Ferro, S.; Battisti, A.; Mattesini, Maurizio; Ahuja, R.; Guo, J. -H.

    2013-01-01

    The valence and conduction band electronic structure of boron-doped diamond has been measured using soft x-ray emission and absorption spectroscopy. The experimental results reveal p-type doping in the diamond film through the appearance of states in the band-gap. Structure distortion was observed around the doping center, while the long range order of the diamond structure remains. A chemically shifted C 1s level explains why one of the absorption features seems to appear below the valence b...

  1. Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations

    Institute of Scientific and Technical Information of China (English)

    LIAO Long-Zhong; LIU Zheng-Hui; ZHANG Zhao-Hui

    2008-01-01

    Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.

  2. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Science.gov (United States)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  3. Thermal Diffusion Boron Doping of Single-Crystal Diamond

    OpenAIRE

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Sarah; Morgan, Dane; Ma, Zhenqiang

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping str...

  4. Boron-Doped Strontium-Stabilized Bismuth Cobalt Oxide Thermoelectric Nanocrystalline Ceramic Powders Synthesized via Electrospinning

    Science.gov (United States)

    Koçyiğit, Serhat; Aytimur, Arda; Çınar, Emre; Uslu, İbrahim; Akdemir, Ahmet

    2014-01-01

    Boron-doped strontium-stabilized bismuth cobalt oxide thermoelectric nanocrystalline ceramic powders were produced by using a polymeric precursor technique. The powders were characterized by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and physical properties measurement system (PPMS) techniques. The XRD results showed that these patterns have a two-phase mixture. The phases are face-centered cubic (fcc) and body-centered cubic (bcc). Values of the crystallite size, dislocation density, and microstrain were calculated by using the Scherrer equation. The lattice parameters were calculated for fcc and bcc phases. The SEM results showed that needle-like grains are formed in boron-undoped composite materials, but the needle-like grains changed to the plate-like grains with the addition of boron. The distribution of the nanofiber diameters was calculated and the average diameter of the boron-doped sample is smaller than the boron-undoped one. PPMS values showed that the electrical resistivity values decreased, but the thermal conductivity values, the Seebeck coefficients, and figure of merit ( ZT) increased with increasing temperature for the two samples.

  5. Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, San Luis Potosi 78216 (Mexico); Reyes-Reyes, M [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi 78000 (Mexico); Rivera, J L, E-mail: sandov@ipicyt.edu.m [Facultad de Ingenieria Quimica, Universidad Michoacana de San Nicolas de Hidalgo, Santiago Tapia 403, Morelia, Michoacan, 58000 (Mexico)

    2010-12-22

    Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC{sub 3} island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations (<5%) the structural stabilities are similar. For all the doped cases, we have found that the BC{sub 3} island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

  6. Seebeck coefficient and electrical conductivity of doped Beta-Boron

    International Nuclear Information System (INIS)

    Beta-rhombohedral boron (β-B) was investigated to determine its potential for use as a high temperature thermoelectric material. Single dopants to produce n or p-type material were found. The figure of merit for both types of materials is less than that of silicongermanium thermoelectric alloys

  7. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  8. Influence of structural disorder and Coulomb interactions in the superconductor-insulator transition applied to boron doped diamond

    OpenAIRE

    McIntosh, R.; Mohanta, N.; Taraphder, A.; Bhattacharyya, S.

    2015-01-01

    The influence of disorder, both structural (non-diagonal) and on-site (diagonal), is studied through the inhomogeneous Bogoliubov-de Gennes (BdG) theory in narrow-band disordered superconductors with a view towards understanding superconductivity in boron doped diamond (BDD) and boron- doped nanocrystalline diamond (BNCD) films. We employ the attractive Hubbard model within the mean field approximation, including the Coulomb interaction between holes in the narrow acceptor band. We study subs...

  9. Optoelectronic studies of boron-doped and gamma-irradiated diamond thin films

    Science.gov (United States)

    Chapagain, Puskar; Nemashkalo, Anastasiia; Peters, Raul; Farmer, John; Gupta, Sanju; Strzhemechny, Yuri M.

    2011-10-01

    Elucidation of microscopic properties of a synthetic diamond, such as formation and evolution of bulk and surface defects, chemistry of dopants, etc. is necessary for a reliable quality control and reproducibility in applications. Employing surface photovoltage (SPV) and photoluminescence (PL) spectroscopic probes we studied diamond thin films grown on silicon by microwave plasma-assisted chemical vapor deposition with different levels of boron doping in conjunction with gamma irradiation. SPV measurements showed that while the increase of boron concentration leads to a semiconductor-metal transition, subsequent intense gamma irradiation reverts back the quasi-metallic samples to semiconducting state via compensating electrical activity of boron by hydrogen. One of the most pronounced common transitions in the SPV spectra was observed at ˜3.1 eV, also present in most of the PL spectra. We argue that this is a signature of the sp^2-C clusters/layers in the vicinity of grain boundaries.

  10. Effect of boron doping on optical properties of sol–gel based nanostructured zinc oxide films on glass

    International Nuclear Information System (INIS)

    Graphical abstract: Room temperature fine structured UV–vis PL emissions (a) as phonon replicas in 1 at.% boron doped film originated from LO phonon evidenced from Near Grazing Incidence Angle (NGIA) IR spectral study (b). Highlights: ► Sol–gel based boron doped nanostructured ZnO thin films deposited on pure silica glass using crystalline boric acid as boron source. ► Observed first time, room temperature fine structured PL emissions in 1 at.% doped film as phonon replicas originated from LO phonon (both IR and Raman active). ► Boron doping controls the LO phonon energy in addition to visible reflection, band gap and grain size. ► The films possessed mixed crystal phases with hexagonal as major phase. -- Abstract: Boron doped zinc oxide thin films (∼80 nm) were deposited onto pure silica glass by sol–gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24–2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.

  11. Communication: Towards catalytic nitric oxide reduction via oligomerization on boron doped graphene

    Science.gov (United States)

    Cantatore, Valentina; Panas, Itai

    2016-04-01

    We use density functional theory to describe a novel way for metal free catalytic reduction of nitric oxide NO utilizing boron doped graphene. The present study is based on the observation that boron doped graphene and O—N=N—O- act as Lewis acid-base pair allowing the graphene surface to act as a catalyst. The process implies electron assisted N=N bond formation prior to N—O dissociation. Two N2 + O2 product channels, one of which favoring N2O formation, are envisaged as outcome of the catalytic process. Besides, we show also that the N2 + O2 formation pathways are contrasted by a side reaction that brings to N3O3- formation and decomposition into N2O + NO2-.

  12. Quantum study of hydrogen interaction with plasma-facing graphite and boron doped graphite surfaces

    International Nuclear Information System (INIS)

    Hydrogen adsorption and absorption on carbon materials play an important role in plasma surface interactions in thermonuclear controlled fusion devices. The density functional theory has been used in order to investigate the interaction of hydrogen atoms with the basal (0001) plane of pure graphite and boron-doped graphite; these materials are taken as models of carbon armor of plasma facing components in tokamaks. We have shown that hydrogen adsorbs weakly on the graphite surface making the adsorbent carbon tetrahedral (sp3). It can also penetrate into the bulk through the surface aromatic cycles with a barrier of energy low compared to the energy of the impinging particles coming from the boundary plasma of tokamaks. Boron doping reinforces strongly the C-H bonding energy and decreases dramatically the energy barrier associated to hydrogen diffusion into the bulk. We have also investigated the H2 recombination on the same substrate through Eley-Rideal and Langmuir-Hinshelwood mechanisms. (authors)

  13. The location and doping effect of boron in Si nanocrystals embedded silicon oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Min; Li, Dongsheng; Chen, Le; Wang, Feng; Zhu, Xiaodong; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2013-03-25

    Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. The observation of x-ray photoelectron spectroscopy of Si 2p and B 1s and the decrease in lattice spacing of Si (111) plane suggest that B atoms are doped into Si-NCs. The activated doping is confirmed by the Fano effect of the micro-Raman spectra for Si-NCs and the drastic decrease of the sheet resistance.

  14. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

    International Nuclear Information System (INIS)

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (Deff) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (CuI+) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O2+ ions. The CuI+ ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of CuI+ ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different Deff values, and compared with other measurement techniques

  15. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Songfoo [S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor (Malaysia); You, Ahheng [Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka (Malaysia); Tou, Teckyong, E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya (Malaysia)

    2013-03-20

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (D{sub eff}) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cu{sub I}{sup +}) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O{sub 2}{sup +} ions. The Cu{sub I}{sup +} ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu{sub I}{sup +} ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different D{sub eff} values, and compared with other measurement techniques.

  16. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  17. Boron-doped nanocrystalline diamond electrodes for neural interfaces: In vivo biocompatibility evaluation

    OpenAIRE

    María eAlcaide; Andrew eTaylor; Morten eFjorback; Vladimir eZachar; Cristian Pablo Pennisi

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended ...

  18. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation

    OpenAIRE

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P.

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended ...

  19. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    OpenAIRE

    Alejandro Medel; Erika Bustos; Karen Esquivel; Luis A. Godínez; Yunny Meas

    2012-01-01

    Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. ...

  20. Reactivity of electrogenerated free hydroxyl radicals and activation of dioxygen on boron-doped diamond electrodes

    OpenAIRE

    Kapalka, Agnieszka

    2008-01-01

    Synthetic boron-doped diamond (BDD) thin film is an electrode material with high chemical and dimensional stability, low background current and a very wide potential window of water stability. Upon anodic polarization, BDD generates hydroxyl radicals that mediate the oxidation processes in the vicinity of the electrode surface. These hydroxyl radials are assumed to be free, i.e., not adsorbed on the electrode surface. Hydroxyl radicals are formed on BDD during water discharge, which is the ra...

  1. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

    Czech Academy of Sciences Publication Activity Database

    Mortet, Vincent; Pernot, J.; Jomard, F.; Soltani, A.; Remeš, Zdeněk; Barjon, J.; D´Haen, J.; Haenen, K.

    2015-01-01

    Roč. 35, Mar (2015), s. 29-34. ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Grant ostatní: EU(XE) CZ.1.07/2.3.00/20.0306 Institutional support: RVO:68378271 Keywords : diamond * boron * doping * crystalline orientation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.919, year: 2014

  2. Investigation of surface properties of boron doped diamond for developing neuron -machine interface

    OpenAIRE

    Vahidpour, Farnoosh

    2016-01-01

    Summary The main goal of this thesis is to study how diamond films advance the construction of the hybrid biological-solid state interfaces and to construct Micro-Electrode Arrays (MEAs) for neural recordings. First, a literature study was carried out to review diamond applications in biology for in vitro and in vivo and for Microelectrode arrays (MEAs). In order to develop diamond MEAs, nano crystalline diamond (NCD) and boron-doped nano crystalline diamond (BNCD) were synthetized on fuse...

  3. Fabrication and characterization of n-type zinc oxide/p-type boron doped diamond heterojunction

    Czech Academy of Sciences Publication Activity Database

    Marton, M.; Mikolášek, M.; Bruncko, J.; Novotný, I.; Ižák, Tibor; Vojs, M.; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-01-01

    Roč. 66, č. 5 (2015), s. 277-281. ISSN 1335-3632 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) 7AMB14SK024 Institutional support: RVO:68378271 Keywords : boron doped diamond * zinc oxide * Raman spectroscopy * bipolar heterostructure * wide-bandgap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.378, year: 2014

  4. Silicon-Based Thermoelectrics Made from a Boron-Doped Silicon Dioxide Nanocomposite

    OpenAIRE

    Snedaker, ML; Zhang, Y.; Birkel, CS; H. Wang; Day, T.; Shi, Y; Ji, X.; Kraemer, S.; Mills, CE; Moosazadeh, A; Moskovits, M.; Snyder, GJ; Stucky, GD

    2013-01-01

    We report a method for preparing p-type silicon germanium bulk alloys directly from a boron-doped silica germania nanocomposite. This is the first successful attempt to produce and characterize the thermoelectric properties of SiGe-based thermoelectric materials prepared at temperatures below the alloy's melting point through a magnesiothermic reduction of the silica-germania nanocomposite. We observe a thermoelectric power factor that is competitive with the literature record obtained for hi...

  5. Lab-made Sensors Based on Boron-doped Diamond for Determination of Herbicide Linuron

    Czech Academy of Sciences Publication Activity Database

    Štěpánková, M.; Šelešovská, R.; Janíková, L.; Vojs, M.; Marton, M.; Behúl, M.; Nováková, Kateřina; Chýlková, J.

    Ústí nad Labem: Srsenová Lenka - Best Servis, 2015 - (Navrátil, T.; Fojta, M.; Schwarzová, K.), s. 236-240 ISBN 978-80-905221-3-8. [Moderní elektrochemické metody /35./. Jetřichovice (CZ), 18.05.2015-22.05.2015] Institutional support: RVO:61388955 Keywords : Boron doped diamond electrode * sensors * voltammetry Subject RIV: CG - Electrochemistry

  6. Investigations of electrochemical oxygen transfer reaction on boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kapalka, Agnieszka; Foti, Gyoergy [Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Comninellis, Christos [Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)], E-mail: christos.comninellis@epfl.ch

    2007-12-31

    In this paper, the electrochemical oxygen transfer reaction (EOTR) is studied on boron-doped diamond electrodes using simple C{sub 1} organic compounds (methanol and formic acid). The kinetics of both oxygen evolution (side reaction) and organics oxidation (main reaction) has been investigated using boron-doped diamond microelectrodes-array (BDD MEA). Oxygen evolution, in the high-potential region, takes place with a Tafel slope of 120 mV dec{sup -1} and zero reaction order with respect to H{sup +}. In the presence of organics, a shift of the polarization curves to lower potentials is observed while the Tafel slopes remain close to 120 mV dec{sup -1}. A simplified model of C{sub 1} organics oxidation is proposed. Both water discharge and organics oxidation are assumed to be fast reactions. The slowest step of the studied EOTR is the anodic discharge of hydroxyl radicals to oxygen. Further in this work, electrolysis of formic acid on boron-doped diamond macroelectrode is presented. In order to achieve 100% current efficiency, electrolysis was carried out under programmed current, in which the current density was adjusted to the limiting value.

  7. The Immunosuppressive drug – Rapamycin – Electroanalytical Sensing Using Boron- Doped Diamond electrode

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted -- Abstract: This paper presents for the first time the study of electrochemical behavior of well known immunosuppressant drug – rapamycin (sirolimus) using boron-doped diamond electrode. Rapamycin provided single and oval-shaped oxidation peak at +1.1 V vs. Ag/AgCl electrode in Britton–Robinson buffer solution at pH 3 confirming highly irreversible behavior of analyte at boron-doped diamond electrode. A differential pulse voltammetry was used for quantification of tested drug under the optimum experimental conditions. The calibration curve was linear over the range from 0.5 to 19.5 μM (R2 = 0.9976) with detection limit of 0.22 μM. Repeatability of ten successfully measurements of three different concentrations (5, 10 and 15 μM) was 2.5, 1.9 and 1,7 %, respectively. Influence of most common biomolecules presented in urine samples was evaluated. The suggested analytical methodology was successfully applied for determination of rapamycin in four urine samples with excellent recoveries. The developed approach could be beneficial in analysis of rapamycin in biological samples using boron-doped diamond electrode as up-to-date electrochemical sensor and could represent inexpensive analytical alternative to separation methods

  8. Boron-doped dependent sites of iodine in silicon

    International Nuclear Information System (INIS)

    A preliminary account is given of a low-temperature channeling study of the location of implanted iodine atoms in pure and p-doped Si. In recent Moessbauer and channeling work performed in this laboratory different sites were found in these cases. Channeling dips for Si and I for the main strings were obtained in both cases and compared with results obtained with a newly developed computer simulation program. It was found that after thermal annealing nearly all I atoms occupy off-substitutional sites which are different for doped and undoped Si. For doped Si a unique site could be determined. It is concluded that the displacements may be due to vacancy-association of the I atoms. This implies that we observed sites that are different from those found in Moessbauer spectroscopy. (orig.)

  9. Boron-doped dependent sites of iodine in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Boerma, D.O.; Niesen, L.; Smulders, P.J.M.; Marchie van Voorthuysen, E.H. du (Rijksuniversiteit Groningen (Netherlands). Lab. voor Algemene Natuurkunde; Rijksuniversiteit Groningen (Netherlands). Materials Science Centre)

    1983-05-01

    A preliminary account is given of a low-temperature channeling study of the location of implanted iodine atoms in pure and p-doped Si. In recent Moessbauer and channeling work performed in this laboratory different sites were found in these cases. Channeling dips for Si and I for the main strings were obtained in both cases and compared with results obtained with a newly developed computer simulation program. It was found that after thermal annealing nearly all I atoms occupy off-substitutional sites which are different for doped and undoped Si. For doped Si a unique site could be determined. It is concluded that the displacements may be due to vacancy-association of the I atoms. This implies that we observed sites that are different from those found in Moessbauer spectroscopy.

  10. Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    L.A. Li; S.H. Cheng; H.D. Li; Q. Yu; J.W. Liu; X.Y. Lv

    2010-01-01

    In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

  11. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  12. Effect of diborane on the microstructure of boron-doped silicon nanowires

    Science.gov (United States)

    Pan, Ling; Lew, Kok-Keong; Redwing, Joan M.; Dickey, Elizabeth C.

    2005-04-01

    Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH 4) and diborane (B 2H 6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B 2H 6 partial pressure and thus lower doping levels (⩽1×10 18 cm -3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H 6 partial pressure (˜2×10 19 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B 2H 6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.

  13. Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic Surfaces

    OpenAIRE

    Barry, Nicolas P. E.; Pitto-Barry, Anaïs; Tran, Johanna; Spencer, Simon E. F.; Johansen, Adam M.; Sanchez, Ana M.; Dove, Andrew P.; O’Reilly, Rachel K.; Deeth, Robert J; Beanland, Richard; Sadler, Peter J

    2015-01-01

    We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer. The surfaces were characterized by energy-dispersive X-ray (EDX) analysis and electron energy loss spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26× faster on the B/Se surface compared to the B/S surface (233 ± 34 pm·s–1 versus 8.9 ± 1.9 ...

  14. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

    International Nuclear Information System (INIS)

    The oxygen precipitation of highly (17.5 mΩ cm) and moderately (4.5 Ω cm) boron (B) doped silicon (Si) crystals at 780 °C is investigated by following in-situ the evolution of diffraction Pendellösung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 °C for 30 h, the precipitate density ρ is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on ρ is dramatically higher for the samples directly heated to 780 °C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies σ with those found at 900 °C in a previous publication.

  15. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Will, J., E-mail: johannes.will@fau.de; Gröschel, A.; Bergmann, C.; Weißer, M.; Magerl, A. [Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany)

    2014-09-15

    The oxygen precipitation of highly (17.5 mΩ cm) and moderately (4.5 Ω cm) boron (B) doped silicon (Si) crystals at 780 °C is investigated by following in-situ the evolution of diffraction Pendellösung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 °C for 30 h, the precipitate density ρ is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on ρ is dramatically higher for the samples directly heated to 780 °C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies σ with those found at 900 °C in a previous publication.

  16. Boron-doped graphene quantum dots for selective glucose sensing based on the "abnormal" aggregation-induced photoluminescence enhancement.

    Science.gov (United States)

    Zhang, Li; Zhang, Zhi-Yi; Liang, Ru-Ping; Li, Ya-Hua; Qiu, Jian-Ding

    2014-05-01

    A hydrothermal approach for the cutting of boron-doped graphene (BG) into boron-doped graphene quantum dots (BGQDs) has been proposed. Various characterizations reveal that the boron atoms have been successfully doped into graphene structures with the atomic percentage of 3.45%. The generation of boronic acid groups on the BGQDs surfaces facilitates their application as a new photoluminescence (PL) probe for label free glucose sensing. It is postulated that the reaction of the two cis-diol units in glucose with the two boronic acid groups on the BGQDs surfaces creates structurally rigid BGQDs-glucose aggregates, restricting the intramolecular rotations and thus resulting in a great boost in the PL intensity. The present unusual "aggregation-induced PL increasing" sensing process excludes any saccharide with only one cis-diol unit, as manifested by the high specificity of BGQDs for glucose over its close isomeric cousins fructose, galactose, and mannose. It is believed that the doping of boron can introduce the GQDs to a new kind of surface state and offer great scientific insights to the PL enhancement mechanism with treatment of glucose. PMID:24708154

  17. Synthesis of boron and nitrogen doped graphene supporting PtRu nanoparticles as catalysts for methanol electrooxidation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Jiming; Zhou, Yingke, E-mail: zhouyk888@hotmail.com; Tian, Xiaohui; Xu, Xiao; Zhu, Hongxi; Zhang, Shaowei; Yuan, Tao

    2014-10-30

    Highlights: • A single-step heat treatment approach is developed to synthesize boron and nitrogen doped graphene supporting PtRu nanocatalysts. • The introduction of boron or nitrogen containing function groups into graphene can modulate the particle size and dispersion of the supporting PtRu nanoparticles. • The optimized catalysts present high electrocatalytic activity and excellent stability for methanol oxidation reaction. - Abstract: In this study, we demonstrate a single-step heat treatment approach to synthesize boron and nitrogen doped graphene supporting PtRu electrocatalysts for methanol electro-oxidation reaction. The reduction of graphene oxide, boron or nitrogen doping of graphene and loading of PtRu nanoparticles happened simultaneously during the reaction process. The morphologies and microstructures of the as-prepared catalysts were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The electrocatalytic methanol oxidation activity and durability of the obtained catalysts were evaluated by the cyclic voltammetry and chronoamperometric techniques. The results reveal that the boron and nitrogen doped graphene supporting PtRu electrocatalysts can be successfully prepared by the single step heat treatment technique, and the introduction of boron or nitrogen containing function groups into the reduced graphene sheets could modulate the particle size and dispersion of the supporting PtRu nanoparticles and improve the electrocatalytic performance of methanol oxidation reaction. The optimal annealing temperature is 800 °C, the preferable heat treatment time is 60 min for the nitrogen-doped catalysts and 90 min for the boron-doped catalysts, and the catalysts prepared under such conditions present superior catalytic activities for methanol oxidation than those prepared under other heat treatment conditions.

  18. Synthesis of boron and nitrogen doped graphene supporting PtRu nanoparticles as catalysts for methanol electrooxidation

    International Nuclear Information System (INIS)

    Highlights: • A single-step heat treatment approach is developed to synthesize boron and nitrogen doped graphene supporting PtRu nanocatalysts. • The introduction of boron or nitrogen containing function groups into graphene can modulate the particle size and dispersion of the supporting PtRu nanoparticles. • The optimized catalysts present high electrocatalytic activity and excellent stability for methanol oxidation reaction. - Abstract: In this study, we demonstrate a single-step heat treatment approach to synthesize boron and nitrogen doped graphene supporting PtRu electrocatalysts for methanol electro-oxidation reaction. The reduction of graphene oxide, boron or nitrogen doping of graphene and loading of PtRu nanoparticles happened simultaneously during the reaction process. The morphologies and microstructures of the as-prepared catalysts were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The electrocatalytic methanol oxidation activity and durability of the obtained catalysts were evaluated by the cyclic voltammetry and chronoamperometric techniques. The results reveal that the boron and nitrogen doped graphene supporting PtRu electrocatalysts can be successfully prepared by the single step heat treatment technique, and the introduction of boron or nitrogen containing function groups into the reduced graphene sheets could modulate the particle size and dispersion of the supporting PtRu nanoparticles and improve the electrocatalytic performance of methanol oxidation reaction. The optimal annealing temperature is 800 °C, the preferable heat treatment time is 60 min for the nitrogen-doped catalysts and 90 min for the boron-doped catalysts, and the catalysts prepared under such conditions present superior catalytic activities for methanol oxidation than those prepared under other heat treatment conditions

  19. Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron

    International Nuclear Information System (INIS)

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J0 were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J0 values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p+ silicon than in n+ silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p+ silicon. With the two different parameterizations derived in this paper for the BGN in p+ silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data

  20. Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene.

    Science.gov (United States)

    Usachov, Dmitry Yu; Fedorov, Alexander V; Vilkov, Oleg Yu; Petukhov, Anatoly E; Rybkin, Artem G; Ernst, Arthur; Otrokov, Mikhail M; Chulkov, Evgueni V; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Yashina, Lada V; Kataev, Elmar Yu; Erofeevskaya, Anna V; Voroshnin, Vladimir Yu; Adamchuk, Vera K; Laubschat, Clemens; Vyalikh, Denis V

    2016-07-13

    The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications. PMID:27248659

  1. Experimental evaluation of neutron performance in boron-doped low activation concrete

    International Nuclear Information System (INIS)

    Reaction rate distribution in concrete with/without boron dopant up to a thickness of 60 cm was measured using Yayoi fast reactor located at Univ. of Tokyo. The 7 reaction rates such as 197Au(n, γ), 59Co(n, γ), 115In(n, n'), 55Mn(n, γ), 23Na(n, γ), 94Zr(n, γ) and 96Zr(n, γ) were measured at 12 different depths, and the reduction of the reaction rate as a result of boron doping was quantitatively analysed. These reaction rates were also used to determine epithermal neutron spectrum shape parameter. Monte Carlo simulations of the experimental setup were performed using the MCNP-5 code. Simulated depth profiles of reaction rates and the epithermal neutron spectrum shape parameter agreed with the experimental results with fair accuracy. This experimental results provide useful data to benchmark the accuracy of neutron transport codes in the prediction of transmission and neutron spectrum distortion in boron-doped concrete. (authors)

  2. Influence of boron doped carbon nanotubes on electric and electromagnetic properties of phosphate composite materials

    International Nuclear Information System (INIS)

    The work presents a study of the possibility to develop the multifunctional composite materials based on the electromagnetically absorbing nonfired, mechanically strong and heat-resistant phosphate ceramics. The potentialities of using pure and boron doped multiwalled carbon nanotubes (MWCNTs and B-MWCNTs, respectively) as functional additives to the phosphate matrix were investigated. It was found that a length of MWCNT is the determining factor for the electrical conductivity and high-frequency conductivity of the composite. Growth of the intrinsic conductivity of boron-containing MWCNTs, compared to their undoped counterparts, has no significant influence on the possible resistance decrease of the composite on their basis in the static mode and also on its ability to electromagnetic shielding. This is due to a small length of B-MWCNTs and hence much greater concentrations required to achieve the percolation threshold than those studied (up to 1,5 wt. %). On the contrary, the use of long pure MWCNTs in small concentrations has a tremendous impact on the electromagnetic properties of the phosphate composite: on introduction of 1,5 wt. % of MWCNTs one can observe increase in the conductivity by 13 orders of magnitude, and the composite MWCNTs/phosphate 1 mm thick is opaque to microwave radiation. Taking into account the interest in using the boron-doped MWNT also as neutron-absorbing materials, it is essential to improve the synthesis methods of B-MWCNTs with the aim of increasing their length. (authors)

  3. Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

    Science.gov (United States)

    Al-Hamdani, Yasmine S.; Alfè, Dario; von Lilienfeld, O. Anatole; Michaelides, Angelos

    2016-04-01

    Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparing the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.

  4. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  5. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation

    International Nuclear Information System (INIS)

    Highlights: → Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. → B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. → The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism of B-goethite was discussed.

  6. Neutron dosimetry by the spark counting of tracks in boron-doped film

    International Nuclear Information System (INIS)

    Thin cellulose nitrate films are doped with a boron compound. After thermal neutron irradiation, the films are etched in an aqueous solution of 10% NaOH, at 50 deg C, for 1.5 hr, during which the 27 μm thick films are reduced to about 7 μm. The etch-pits caused by 10B(n,α)7Li reactions are punched twice at 600 V and then counted at 500 V. The ratio of the spark density to the thermal neutron fluence was found to be 1.0 x 10-4 for a boron concentration of 1%. After due consideration of background counts, a thermal neutron dose of 0.3 mrem (3 x 10-6 Sv) can be measured with this system. (author)

  7. Hydrogen hosting on aluminum-doped boron clusters: Density functional theory

    Science.gov (United States)

    Böyükata, Mustafa; Güvenç, Ziya B.

    2009-11-01

    The geometries, stabilities, and energetics of aluminum doped boron clusters, up to 13-atom, and their various hydrogenated complexes have been investigated via the density functional theory (DFT). The geometry optimizations have been carried out by using B3LYP functional and 6-311++G11 basis set. Up to 5-atom clusters arrangements of the atoms, in the most stable structures, have two-dimensional forms. From 6- to 13-atom clusters three-dimensional forms are favored by the lowest energy structures. Hydrogen hosting effects the structures of AlBn clusters. Adding an Al atom to the cage B12 leads structural changes but hydrogenated boron, B12H12 can resist to Al effect.

  8. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced. PMID:19441448

  9. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Qfix) and the effective lifetimes (τeff) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τeff than standard undoped layers. In contrast, B-doped layers exhibit lower τeff. A strong Qfix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  10. Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

    International Nuclear Information System (INIS)

    We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 1015/cm2 to 4 x 1015/cm2, followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 deg. C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer.

  11. Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Won-Eui [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Deok Hoi; Kim, Chi Woo [LTPS Team, AMLCD Business, Samsung Mobile Display CO., Cheonan-si, ChoongchungNam-do 331-300 (Korea, Republic of); Ro, Jae-Sang, E-mail: jsang@wow.hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)

    2011-10-31

    We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 10{sup 15}/cm{sup 2} to 4 x 10{sup 15}/cm{sup 2}, followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 deg. C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer.

  12. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  13. Thermal properties of neutron-irradiated SiC; effects of boron doping

    Science.gov (United States)

    Lee, C. W.; Pineau, F. J.; Corelli, J. C.

    1982-08-01

    The temperature dependence (25°C to 1000°C) of thermal conductivity for siliconized (reaction bonded) SiC and alpha phase (sintered) SiC irradiated to neutron fluences of 4 to 8 × 10 24n/ m2 ( E>1 MeV) were studied utilizing the heat pulse technique. The fluences are equivalent to 0.8 and 1.6 dpa and the sample temperature during irradiation was ~ 140°C. Silicon carbide exhibits a significant decrease in thermal conductivity after irradiation, specifically a factor of ~ 5 decrease is observed for siliconized SiC. Comparisons were made with SiC samples doped with 10B, 11B, and natural boron to investigate the effects of impurity doping. It was found that the presence of natural boron and 11B have no significant effect on the thermal conductivity of irradiated SiC, whereas SiC doped with 10B exhibits a slightly larger decrease in thermal conductivity due to the enhanced radiation damage (e.g., helium production) through the 10B (n, α) 7Li reaction. The lowering of the thermal conductivity after irradiation can explain the decreased resistance against thermal shcok of irradiated SiC. The decrease in thermal conductivity is due to enhanced phonon scattering by radiation-induced vacancies and dislocations. Results on annealing effects and comparison with mechanical properties are presented.

  14. Thermal properties of neutron-irradiated SiC; effects of boron doping

    International Nuclear Information System (INIS)

    The temperature dependence (250C to 10000C) of thermal conductivity for siliconized (reaction bonded) SiC and alpha phase (sintered) SiC irradiated to neutron fluences of 4 to 8x1024n/m2 (E > 1 MeV) were studied utilizing the heat pulse technique. The fluences are equivalent to 0.8 and 1.6 dpa and the sample temperature during irradiation was approx. equal to 140 0C. Silicon carbide exhibits a significant decrease in thermal conductivity after irradiation, specifically a factor of approx. equal to 5 decrease is observed for siliconized SiC. Comparisons were made with SiC samples doped with 10B, 11B, and natural boron to investigate the effects of impurity doping. It was found that the presence of natural boron and 11B have no significant effect on the thermal conductivity of irradiated SiC, whereas SiC doped with 10B exhibits a slightly larger decrease in thermal conductivity due to the conductivity after irradiation can explain the decreased resistance against thermal shock of irradiated SiC. The decrease in thermal conductivity is due to enhanced phonon scattering by radiation-induced vacancies and dislocations. Results on annealing effects and comparison with mechanical properties are presented. (orig.)

  15. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L‑1 (cubic SiC NWs) and 5–8000 μmoL L‑1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L‑1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  16. Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

    Czech Academy of Sciences Publication Activity Database

    Ashcheulov, Petr; Šebera, Jakub; Kovalenko, Alexander; Petrák, Václav; Fendrych, František; Nesládek, M.; Taylor, Andrew; Vlčková Živcová, Zuzana; Frank, Otakar; Kavan, Ladislav; Dračínský, Martin; Hubík, Pavel; Vacík, Jiří; Kraus, I.; Kratochvílová, Irena

    2013-01-01

    Roč. 86, č. 10 (2013), "443-1"-"443-9". ISSN 1434-6028 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA MŠk(XE) LM2011019; GA ČR GA13-31783S; GA MŠk(CZ) LD11076 Grant ostatní: FP7 ITN(XE) 238201-MATCON Institutional support: RVO:68378271 ; RVO:61388955 ; RVO:61388963 ; RVO:61389005 Keywords : polycrystalline diamond layer * conductivity B doping Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 1.463, year: 2013

  17. Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

    Energy Technology Data Exchange (ETDEWEB)

    Achard, J.; Issaoui, R.; Tallaire, A.; Silva, F.; Gicquel, A. [Universite Paris 13, Sorbonne Paris Cite, Laboratoire des Sciences des Procedes et des Materiaux, CNRS (UPR 3407), 93430 Villetaneuse (France); Barjon, J.; Jomard, F. [GEMaC, CNRS-Universite de Versailles St-Quentin, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)

    2012-09-15

    The development of 'all-diamond' devices for power electronics is attracting more and more interest as judged by the recent increase in the number of publications on the subject. Nevertheless most devices reported in the literature used coplanar or pseudo-vertical geometries which, although promising in term of breakdown voltage, have still a relatively high on-state resistance. This could be related to current crowding due the low cross-section p{sup +} layer. Vertical configuration, which requires thick heavily doped substrates, is a possible alternative usually used in conventional semiconductors. In this study, chemical vapour deposition (CVD) diamond growth conditions allowing heavy boron doping over an important thickness are discussed. It was found that there is an optimal range of microwave power density (MWPD) for which reasonable doping efficiencies and growth rates can be obtained leading to hundreds of micrometers thick crystals with a doping level higher than 10{sup 20} cm{sup -3}. The crystal morphology was predicted thanks to a 3D geometrical model and a small addition of oxygen to the gas phase was efficient to avoid the appearance of undesirable crystals faces and keep the crystal integrity. Freestanding boron-doped diamond single crystals were eventually grown and characterized by secondary ion mass spectrometry (SIMS), Fourier transformed InfraRed (FTIR) spectroscopy, Raman spectroscopy, high resolution X-ray diffraction (HRXRD) and four-point probe measurements. The high quality of the synthetic crystals was confirmed exhibiting electrical resistivities as low as 0.26 {Omega} cm illustrating that this material is suitable for the development of vertical power electronic devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    International Nuclear Information System (INIS)

    Highlights: ► B/TiO2 nano-materials are prepared and doping improves particles agglomeration. ► Absorption spectrum move to visible light after doped. ► B/TiO2 nano-materials firstly applied to the fields of antibacterial materials. ► Calcined at high temperature of 900 °C, B/TiO2 has still strong antibacterial. - Abstract: Boron-doped TiO2 (B/TiO2) nano-materials were synthesized by a sol–gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV–vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO2 nano-materials on Escherichia coli were investigated. The results show that the structure of TiO2 could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO2 structure or incorporated into the TiO2 lattice through occupying O sites, whereas others exist as B2O3. The results of antibacterial experiment under visible light irradiation show that the B/TiO2 nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO2. Ultimately, the action mechanism of B/TiO2 doping is discussed.

  19. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  20. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    James V. Marzik

    2012-03-26

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl{sub 3} in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB{sub 2} wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J{sub c}, in excess of 10{sup 5} A cm{sup -2} at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H{sub c2}(0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T{sub c} in carbon-doped MgB{sub 2} powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB{sub 2} superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant

  1. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    International Nuclear Information System (INIS)

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl3 in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB2 wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, Jc, in excess of 105 A cm-2 at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were Hc2(0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. Tc in carbon-doped MgB2 powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB2 superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant chemistry and concentration, wire processing

  2. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  3. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    Science.gov (United States)

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-01

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices. PMID:26852622

  4. Functionalization of Boron-Doped Nanocrystalline Diamond with N3 Dye Molecules

    OpenAIRE

    Yeap, Weng Siang; X. Liu; Bevk, David; Pasquarelli, A.; Lutsen, Laurence; Fahlman, M.; Maes, Wouter; Haenen, Ken

    2014-01-01

    N3 dye molecules [cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)ruthenium(II)] are covalently attached to boron-doped nanocrystalline diamond (B:NCD) thin films through a combination of coupling chemistries, i.e., diazonium, Suzuki, and EDC-NHS. X-ray and ultraviolet photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy are used to verify the covalent bonding of the dye on the B:NCD surface (compared to a hydrogen-terminated reference). The spect...

  5. Neutral and charged boron-doped fullerenes for CO2 adsorption

    OpenAIRE

    de Silva, Suchitra W; Du, Aijun; Senadeera, Wijitha; Gu, Yuantong

    2014-01-01

    Recently, the capture and storage of CO2 have attracted research interest as a strategy to reduce the global emissions of greenhouse gases. It is crucial to find suitable materials to achieve an efficient CO2 capture. Here we report our study of CO2 adsorption on boron-doped C60 fullerene in the neutral state and in the 1e −-charged state. We use first principle density functional calculations to simulate the CO2 adsorption. The results show that CO2 can form weak interactions with the BC5...

  6. A detailed analysis of the Raman spectra in superconducting boron doped nanocrystalline diamond

    Energy Technology Data Exchange (ETDEWEB)

    Szirmai, Peter [Faculty of Physics, University of Vienna, Strudlhofgasse 4, 1090 Vienna (Austria); Department of Physics, Budapest University of Technology and Economics, PO Box 91, 1521 Budapest (Hungary); Pichler, Thomas [Faculty of Physics, University of Vienna, Strudlhofgasse 4, 1090 Vienna (Austria); Williams, Oliver A. [School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA (United Kingdom); Mandal, Soumen; Baeuerle, Christopher [Institut Neel - CNRS and Universite Joseph Fourier, 38042 Grenoble (France); Simon, Ferenc [Department of Physics, Budapest University of Technology and Economics, PO Box 91, 1521 Budapest (Hungary)

    2012-12-15

    The light scattering properties of superconducting (T{sub c} {approx} 3.8 K) heavily boron doped nanocrystalline diamond has been investigated by Raman spectroscopy using visible excitations. Fano type interference of the zone-center phonon line and the electronic continuum was identified. Lineshape analysis reveals Fano lineshapes with a significant asymmetry (q {approx} -2). An anomalous wavelength dependence and small value of the Raman scattering amplitude is observed in agreement with previous studies. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers

    Institute of Scientific and Technical Information of China (English)

    YAO Fei; XUE Chun-Lai; CHENG Bu-Wen; WANG Qi-Ming

    2007-01-01

    Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

  8. Localized electropolymerization on oxidized boron-doped diamond electrodes modified with pyrrolyl units.

    Science.gov (United States)

    Actis, Paolo; Manesse, Mael; Nunes-Kirchner, Carolina; Wittstock, Gunther; Coffinier, Yannick; Boukherroub, Rabah; Szunerits, Sabine

    2006-11-14

    This paper describes the functionalization of oxidized boron-doped diamond (BDD) electrodes with N-(3-trimethoxysilylpropyl)pyrrole (TMPP) and the influence of this layer on the electrochemical transfer kinetics as well as on the possibility of forming strongly adhesive polypyrrole films on the BDD interface through electropolymerization. Furthermore, localized polymer formation was achieved on the TMPP-modified BDD interface using the direct mode of a scanning electrochemical microscope (SECM) as well as an electrochemical scanning near-field optical microscope (E-SNOM). Depending on the method used polypyrrole dots with diameters in the range of 1-250 microm are electrogenerated. PMID:17066183

  9. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    OpenAIRE

    Ciprian Radovan; Codruţa Cofan

    2008-01-01

    Cyclic voltammetry (CV) and chronoamperometry (CA) have been used to sense and determine simultaneously L-ascorbic acid (AA) and acetaminophen (AC) at a boron-doped diamond electrode (BDDE) in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation param...

  10. Doping-dependence of solid phase epitaxy in boron implanted amorphous silicon layers

    International Nuclear Information System (INIS)

    The kinetics of dopant-enhanced solid phase epitaxy (SPE) have been measured over temperature range 460-660 deg C in buried a-Si layers doped with boron, at concentrations ranging from 1 to 30 x 1019 cm-3. The dopant-enhanced SPE data has been modelled by an extension of generalised Fermi level shifting model to include degenerate semiconductor statistics on the crystalline Si side of the interface. The quality of the fits provides compelling evidence that the GFLS model gives an accurate picture of the dopant-dependence of SPE

  11. A detailed analysis of the Raman spectra in superconducting boron doped nanocrystalline diamond

    International Nuclear Information System (INIS)

    The light scattering properties of superconducting (Tc ∼ 3.8 K) heavily boron doped nanocrystalline diamond has been investigated by Raman spectroscopy using visible excitations. Fano type interference of the zone-center phonon line and the electronic continuum was identified. Lineshape analysis reveals Fano lineshapes with a significant asymmetry (q ∼ -2). An anomalous wavelength dependence and small value of the Raman scattering amplitude is observed in agreement with previous studies. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Porous structure variation of boron-doped graphite during neutron irradiation

    International Nuclear Information System (INIS)

    Dynamics of porous structure variation of graphite during neutron irradiation was studied with the use of recrystallized boron-doped graphite as model material. It was shown that specific volume of open pores grew but density of RG-B graphite decreased at low temperature irradiation (320-340 K). Thermal annealing at 2100 K of irradiated samples partially reduces their elongation and leads to additional increase of volume of open pores. Linear relation (in semilogarithmic coordinates) of decrease of coefficient of elasticity with growth of volume of open pores was established for irradiated and annealed samples

  13. Effect of Boron-Doping on the Graphene Aerogel Used as Cathode for the Lithium-Sulfur Battery.

    Science.gov (United States)

    Xie, Yang; Meng, Zhen; Cai, Tingwei; Han, Wei-Qiang

    2015-11-18

    A porous interconnected 3D boron-doped graphene aerogel (BGA) was prepared via a one-pot hydrothermal treatment. The BGA material was first loaded with sulfur to serve as cathode in lithium-sulfur batteries. Boron was positively polarized on the graphene framework, allowing for chemical adsorption of negative polysufide species. Compared with nitrogen-doped and undoped graphene aerogel, the BGA-S cathode could deliver a higher capacity of 994 mA h g(-1) at 0.2 C after 100 cycles, as well as an outstanding rate capability, which indicated the BGA was an ideal cathode material for lithium-sulfur batteries. PMID:26544917

  14. Influence of growth pressure on the electrical properties of boron-doped polycrystalline diamond films

    International Nuclear Information System (INIS)

    Heavily boron-doped diamond films are synthesized by the hot-filament chemical vapor deposition method under the gas mixtures of H2, CH4 and trimethyl borate. The measurement results of scanning electron microscopy, Raman spectroscopy, X-ray diffractometer and electrical properties showed the morphologies, microstructures, carrier concentration and superconducting transition temperature for as-grown diamond films were dependent on the change of growth pressure, and specially its carrier concentrations could be adjusted from 1019 to 1021 cm-3 by increasing growth pressures from 2.5 to 5 kPa. And further, the effects of growth pressure on the film microstructural property and the doping level dependence of the superconducting transition temperature were discussed.

  15. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    Science.gov (United States)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  17. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  18. Optoelectronic surface-related properties in boron-doped and irradiated diamond thin films

    Science.gov (United States)

    Nemashkalo, A.; Chapagain, P. R.; Peters, R. M.; Farmer, J.; Gupta, S.; Strzhemechny, Y. M.

    2012-01-01

    Elucidation of microscopic properties of synthetic diamond films, such as formation and evolution of bulk and surface defects, chemistry of dopants, is necessary for a reliable quality control and reproducibility in applications. Surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy were employed to study diamond thin films grown on silicon by microwave plasma-assisted chemical vapor deposition and hot-filament chemical vapor deposition with different levels of boron doping in conjunction with gamma irradiation. SPV experiments showed that while the increase of boron concentration leads to a semiconductor-metal transition, subsequent gamma irradiation reverts quasi-metallic samples back to a semiconducting state by compensating electrical activity of boron possibly via hydrogen. One of the most pronounced common transitions observed at ˜3.1-3.2 eV in the SPV spectra was also present in all of the PL spectra. It is likely that this is a signature of the sp2-hybridized carbon clusters in or in the vicinity of grain boundaries.

  19. Optoelectronic surface-related properties in boron-doped and irradiated diamond thin films

    International Nuclear Information System (INIS)

    Elucidation of microscopic properties of synthetic diamond films, such as formation and evolution of bulk and surface defects, chemistry of dopants, is necessary for a reliable quality control and reproducibility in applications. Surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy were employed to study diamond thin films grown on silicon by microwave plasma-assisted chemical vapor deposition and hot-filament chemical vapor deposition with different levels of boron doping in conjunction with gamma irradiation. SPV experiments showed that while the increase of boron concentration leads to a semiconductor-metal transition, subsequent gamma irradiation reverts quasi-metallic samples back to a semiconducting state by compensating electrical activity of boron possibly via hydrogen. One of the most pronounced common transitions observed at ∼3.1-3.2 eV in the SPV spectra was also present in all of the PL spectra. It is likely that this is a signature of the sp2-hybridized carbon clusters in or in the vicinity of grain boundaries.

  20. Amperometric Determination of Sulfite by Gas Diffusion-Sequential Injection with Boron-Doped Diamond Electrode

    Science.gov (United States)

    Chinvongamorn, Chakorn; Pinwattana, Kulwadee; Praphairaksit, Narong; Imato, Toshihiko; Chailapakul, Orawon

    2008-01-01

    A gas diffusion sequential injection system with amperometric detection using a boron-doped diamond electrode was developed for the determination of sulfite. A gas diffusion unit (GDU) was used to prevent interference from sample matrices for the electrochemical measurement. The sample was mixed with an acid solution to generate gaseous sulfur dioxide prior to its passage through the donor channel of the GDU. The sulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1M phosphate buffer (pH 8)/0.1% sodium dodecyl sulfate in the acceptor channel of the GDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell and detected directly by amperometry using the boron-doped diamond electrode at 0.95 V (versus Ag/AgCl). Sodium dodecyl sulfate was added to the carrier solution to prevent electrode fouling. This method was applicable in the concentration range of 0.2-20 mg SO32−/L and a detection limit (S/N = 3) of 0.05 mg SO32−/L was achieved. This method was successfully applied to the determination of sulfite in wines and the analytical results agreed well with those obtained by iodimetric titration. The relative standard deviations for the analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was 65 h−1.

  1. Electrochemical Properties of Boron-Doped Diamond Electrodes Prepared by Hot Cathode Direct Current Plasma CVD

    Directory of Open Access Journals (Sweden)

    Hong Yan PENG

    2016-05-01

    Full Text Available A series of boron-doped diamond (BDD films were deposited by using a hot cathode direct current plasma chemical vapor deposition(HCDC-PCVD system with different ratios of CH4/H2/B(OCH33 (trimethylborate gas mixture. The morphology, structure and quality of BDD films were controled by SEM, XRD and Raman measurements. The electrochemical properties of the BDD films were investigated by electrochemical methods. Cyclic voltammetric performances of the BDD films indicated that the main determinant in the electrochemical characteristics of BDD films was the boron doping amount. The threshold potential for oxygen evolution increased from 1 V to 2.5 V. Meanwhile, the electrochemical potential window of BDD films was enlarged from 2.2 V to 4.5 V when the B content was increased from 1.75 × 1019cm-3 to 2.4 × 1021 cm−3. The cyclic voltammograms of BDD films in K4Fe(CN6 and K3Fe(CN6 mixed solution indicated that the behavior of Fe(CN6-3/-4 redox couple could be regarded as semi-reversible.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12926

  2. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    Directory of Open Access Journals (Sweden)

    Alejandro Medel

    2012-01-01

    Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

  3. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Möller, Christian, E-mail: cmoeller@cismst.de [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Bartel, Til; Gibaja, Fabien [Calisolar GmbH, Magnusstraße 11, 12489 Berlin (Germany); Lauer, Kevin [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany)

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  4. Plasma Processing of Boron-Doped Nano-Crystalline Diamond Thin Film Fabricated on Poly-Crystalline Diamond Thick Film

    International Nuclear Information System (INIS)

    Plasma treatments of boron-doped nano-crystalline diamond (NCD) thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond (PCD) thick films in a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor, then they were processed in methane, argon, hydrogen and B2H6 (0.1% diluted by H2) plasmas, respectively. Scanning electron microscopy (SEM) and atomic force microscope (AFM) results show that the surface morphology changed little during the 10 min treatment. Secondary ion mass spectroscopy (SIMS) results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier analyses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.

  5. Pros and cons of nickel- and boron-doping to study helium effects in ferritic/martensitic steels

    Science.gov (United States)

    Hashimoto, N.; Klueh, R. L.; Shiba, K.

    2002-12-01

    In the absence of a 14 MeV neutron source, the effect of helium on structural materials for fusion must be simulated using fission reactors. Helium effects in ferritic/martensitic steels have been studied by adding nickel and boron and irradiating in a mixed-spectrum reactor. Although the nickel- and boron-doping techniques have limitations and difficulties to estimate helium effects on the ferritic/martensitic steels, past irradiation experiments using these techniques have demonstrated similar effects on the swelling and Charpy impact properties that are indicative of a helium effect. Although both techniques have disadvantages, it should be possible to plan experiments using the nickel- and boron-doping techniques to develop an understanding of the effects of helium on mechanical properties.

  6. Boron and nitrogen co-doped titania with enhanced visible-light photocatalytic activity for hydrogen evolution

    International Nuclear Information System (INIS)

    A visible-light boron and nitrogen co-doped titania (B-N-TiO2) photocatalyst was prepared by sol-gel method with titanium tetra-n-butyl oxide, urea and boric acid as precursors. The photocatalyst was characterized by Fourier Transform Infrared (FT-IR), UV-vis diffusive reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), BET and electrochemistry method. Photocatalytic activity for hydrogen production over platinized B-N-TiO2 under visible-light (λ ≥ 420 nm) irradiation was investigated. In nitrogen doped titania (N-TiO2) N-Ti-O bond is formed, which extends the absorption edge to the visible-light region. A part of doping boron enters into titania lattice and most of the boron exists at the surface of the catalyst. The crystallite size of B-N-TiO2 decreases compared to N-TiO2, while its photocurrent and the surface hydroxyl group increase. Furthermore, doping boron could act as shallow traps for photoinduced electrons to prolong the life of the electrons and holes. Therefore, the visible-light activity of B-N-iO2 increases greatly compared with that of N-TiO2

  7. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren; Rechendorff, Kristian; Petrak, Vaclav; Nesladek, Milos; Rijkhoff, Nico; Pennisi, Cristian P.

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, ...

  8. Boron-doped Diamond Electrodes: Electrochemical, Atomic Force Microscopy and Raman Study towards Corrosion-modifications at Nanoscale

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Janda, Pavel; Tarábková, Hana; Nesladek, M.; Mortet, Vincent

    2015-01-01

    Roč. 179, OCT 2015 (2015), s. 626-636. ISSN 0013-4686 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Raman spectroelectrochemistry * atomic force microscopy * boron doped diamond Subject RIV: CG - Electrochemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 4.504, year: 2014

  9. Boron-doped graphene as promising support for platinum catalyst with superior activity towards the methanol electrooxidation reaction

    Science.gov (United States)

    Sun, Yongrong; Du, Chunyu; An, Meichen; Du, Lei; Tan, Qiang; Liu, Chuntao; Gao, Yunzhi; Yin, Geping

    2015-12-01

    We report the synthesis of boron-doped graphene by thermally annealing the mixture of graphene oxide and boric acid, and its usage as the support of Pt catalyst towards the methanol oxidation reaction. The composition, structure and morphology of boron-doped graphene and its supported Pt nanoparticles (Pt/BG) are characterized by transmission electron microscopy, inductively coupled plasma mass spectrometry, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. It is revealed that boron atoms are doped into graphene network in the form of BC2O and BCO2 bonds, which lead to the increase in defect sites and facilitate the subsequent deposition of Pt nanoparticles. Therefore, the Pt/BG catalyst presents smaller particle size and narrower size distribution than the graphene supported Pt (Pt/G) catalyst. When evaluated as the electrocatalyst for the methanol oxidation reaction, the Pt/BG catalyst exhibits excellent electrochemical activity and stability demonstrated by cyclic voltammetry and chronoamperometry tests. The enhanced activity is mainly ascribed to the electronic interaction between boron-doped graphene and Pt nanoparticles, which lowers the d-band center of Pt and thus weakens the absorption of the poisoning intermediate CO. Our work provides an alternative approach of improving the reaction kinetics for the oxidation of small organic molecules.

  10. Synthesis and characterization of boron-doped NiO thin films pro-duced by spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    U Alver; H Yaykasl; S Kerli; A Tanrverdi

    2013-01-01

    Boron-doped NiO thin films were prepared on glass substrates at 400◦C by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diff raction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.

  11. Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers

    OpenAIRE

    Korinek, M.; Schnabel, M; Canino, M.; Kozak, M.; Trojanek, F.; Salava, J.; Löper, P.; Janz, S; Summonte, C.; Maly, P.

    2013-01-01

    The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with ...

  12. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    International Nuclear Information System (INIS)

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018–1019 cm−3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm−3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10−3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport

  13. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  14. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    Science.gov (United States)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  15. Temperature dependence of the conductivity in large-grained boron-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Myong, Seung Yeop; Steinhauser, Jerome; Schluechter, Romain; Fay, Sylvie; Vallat-Sauvain, Evelyne; Shah, Arvind; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Ruefenacht, Alain [Institute of Physics, University of Neuchatel, CH-2000 Neuchatel (Switzerland)

    2007-09-06

    The temperature dependence of the conductivity is investigated as a function of boron doping in large-grained, degenerate polycrystalline ZnO films prepared by low-pressure chemical vapor deposition. Carrier transport in undoped and lightly doped films is mainly controlled by the grain boundary; field emission through grain boundaries limits the conductivity below 90 K, while thermally activated thermoionic-field emission leads to an increase in the conductivity with the temperature near room temperature. In contrast, carrier transport in highly doped films is mainly governed by intra-grain scattering, which does not depend on the temperature for degenerate electron gases, limits the mobility below 120 K, whereas a metallic behavior (decrease in conductivity with increasing temperature) is observed at room temperature, which is linked to the ionized impurity scattering. The transition between the ''semiconductor''-like and metallic-like behavior at room temperature takes place for a film with carrier concentration between 6 x 10{sup 19} and 9 x 10{sup 19} cm{sup -3}. (author)

  16. Doping and electrical properties of cubic boron nitride thin films: A critical review

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) is a promising material for high-power and high-temperature electronic devices operating in harsh environments due to its outstanding properties including a wide band-gap, good chemical stability, high thermal conductivity, and high breakdown field. The electronic applications of c-BN have received considerable attention, benefiting from the progress in c-BN thin film deposition techniques during the last few years. The present article reviews the latest developments in doping and electrical properties of c-BN thin films. Following a brief introduction on film growth, we present calculated theoretical results on electronic structure as well as the energies of native defects and impurity dopants in c-BN. In recent experimental research, several dopants, including Be, Mg, Zn, S, and Si, have been incorporated into c-BN thin films during deposition or by post ion implantation, resulting in both n- and p-type conduction. These results are summarized and discussed in Section 3. In addition, results on c-BN/metal-contacts and p–n junctions based on intrinsic or doped c-BN thin films are discussed in Section 4. Finally, current status and future prospects for doping and electrical properties of c-BN thin films are discussed

  17. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    Energy Technology Data Exchange (ETDEWEB)

    Chicot, G., E-mail: gauthier.chicot@neel.cnrs.fr; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 38042 Grenoble (France); CNRS, Institut NEEL, 38042 Grenoble (France); Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France); Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C. [IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d' Ascq (France); Alegre, M. P.; Piñero, J. C.; Araújo, D. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Jomard, F. [Groupe d' Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex (France); and others

    2014-08-28

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

  18. Preparation and characterization of visible-light-driven titania photocatalyst co-doped with boron and nitrogen

    International Nuclear Information System (INIS)

    In order to improve the photocatalytic performance of titania under visible light, a boron and nitrogen co-doped titania photocatalyst was prepared. Its photoabsorbance was measured by UV-vis diffusive reflectance spectroscopy (DRS). The microstructure of photocatalyst was characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The microcrystal of the co-doped photocatalyst consisted of anatase phase and was approximately present in the form of spherical particle. The particle size was in correlation with the calcination temperature. Degradation of phenol under visible light illumination was used to evaluate the photocatalytic performance. The calcination temperature and the component influenced the photoactivity. The results showed that the co-doping of boron and nitrogen played an important role in the band gap decrease, which led to the rise of the photocatalytic activity

  19. Boron Doped Multi-walled Carbon Nanotubes as Catalysts for Oxygen Reduction Reaction and Oxygen Evolution Reactionin in Alkaline Media

    International Nuclear Information System (INIS)

    The boron doped multi-walled carbon nanotubes (B-MWCNTs) were synthesized by thermal annealing multi-walled carbon nanotubes (MWCNTs) in the presence of boric acid. The transmission electron microscopy (TEM) and X-ray diffraction (XRD) results revealed that the structure of MWCNTs does not be destroyed during the doping process, and X-ray photoelectron spectroscopy (XPS) analysis demonstrated the boron atoms were successfully doped in the structure of MWCNTs. The electrocatalytic properties of B-MWCNTs are characterized by rotating disk electrode (RDE) methods. The results demonstrated that the B-MWCNTs catalyzed oxygen reduction reaction (ORR) in alkaline media by a 2 + 2 electron pathway and it showed good catalytic activity for oxygen evolution reaction (OER) as well

  20. Science Letters:Development of supported boron-doping TiO2 catalysts by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

  1. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  2. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    International Nuclear Information System (INIS)

    In this study, 4 x 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  3. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Science.gov (United States)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-01

    In this study, 4 × 4 mm2 freestanding boron-doped diamond single crystals with thickness up to 260 μm have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 1018 to 1020 cm-3 which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 Ω cm have been obtained.

  4. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    Science.gov (United States)

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time. PMID:27013949

  5. Boron-doped nanocrystalline diamond electrodes for neural interfaces: In vivo biocompatibility evaluation

    Directory of Open Access Journals (Sweden)

    María eAlcaide

    2016-03-01

    Full Text Available Boron-doped nanocrystalline diamond (BDD electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  6. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  7. Comparison of the chemical composition of boron-doped diamond surfaces upon different oxidation processes

    International Nuclear Information System (INIS)

    In spite of the high stability of polycrystalline diamond, oxidation of the hydrogenated surface is relatively easy to perform. This results in the introduction of ether (C-O-C), carbonyl (C=O) and hydroxyl (C-OH) groups on the surface. For further surface functionalization, it is important to quantify the presence of each group on the diamond surface when different oxidation processes are used. In this paper, we investigate the composition of oxidized boron-doped diamond surfaces using X-ray photoelectron spectroscopy (XPS) when electrochemical, photochemical or oxygen plasma methods were employed to introduce oxygen functionalities on as-deposited diamond interfaces. Cyclic voltammetry and C-V measurements were additionally performed to identify more clearly the formation of C-OH, C-O-C and/or C=O functions.

  8. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation

    Science.gov (United States)

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P.

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time. PMID:27013949

  9. Electrochemical oxidation route of methyl paraben on a boron-doped diamond anode

    International Nuclear Information System (INIS)

    Parabens have been widely used in different industries and can be found in health and personal care products. They are esters of p-hydroxy-benzoic acid associated with breast tumors and classified as endocrine disruptors. This study describes the galvanostatic electrochemical oxidation of methyl paraben (MePa) on a boron-doped diamond anode using current densities in the 1.35 to 21.6 mA cm−2 range. The degradation process can be controlled by either charge transfer or mass transport, according to the experimental conditions and rate of mineralization of MePa increased by the current density. The concentration variation as a function of electrolysis time showed that the degradation kinetics follows a pseudo first-order law. A mechanism for the MePa degradation based on reactive intermediates determined by gas chromatography mass spectrometry (GC-MS) is also proposed

  10. Neutral and charged boron-doped fullerenes for CO2 adsorption

    Directory of Open Access Journals (Sweden)

    Suchitra W. de Silva

    2014-04-01

    Full Text Available Recently, the capture and storage of CO2 have attracted research interest as a strategy to reduce the global emissions of greenhouse gases. It is crucial to find suitable materials to achieve an efficient CO2 capture. Here we report our study of CO2 adsorption on boron-doped C60 fullerene in the neutral state and in the 1e−-charged state. We use first principle density functional calculations to simulate the CO2 adsorption. The results show that CO2 can form weak interactions with the BC59 cage in its neutral state and the interactions can be enhanced significantly by introducing an extra electron to the system.

  11. Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedziolka-Joensson, Joanna [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Boland, Susan; Leech, Donal [School of Chemistry, National University of Irland, Galway (Ireland); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-01-01

    The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

  12. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode

    International Nuclear Information System (INIS)

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L-1 Na2SO4 solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  13. Electrochemical and morphological characterization of gold nanoparticles deposited on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Limat, Meriadec; El Roustom, Bahaa [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland); Jotterand, Henri [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Physics of the Complex Matter, CH-1015 Lausanne (Switzerland); Foti, Gyoergy [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)], E-mail: gyorgy.foti@epfl.ch; Comninellis, Christos [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Chemical Sciences and Engineering, CH-1015 Lausanne (Switzerland)

    2009-03-30

    A novel two-step method was employed to synthesize gold nanoparticles dispersed on boron-doped diamond (BDD) electrode. It consisted of sputter deposition at ambient temperature of maximum 15 equivalent monolayers of gold, followed by a heat treatment in air at 600 deg. C. Gold nanoparticles with an average diameter between 7 and 30 nm could be prepared by this method on polycrystalline BDD film electrode. The obtained Au/BDD composite electrode appeared stable under conditions of electrochemical characterization performed using ferri-/ferrocyanide and benzoquinone/hydroquinone redox couples in acidic medium. The electrochemical behavior of Au/BDD was compared to that of bulk Au and BDD electrodes. Finally, the Au/BDD composite electrode was regarded as an array of Au microelectrodes dispersed on BDD substrate.

  14. Electroanalysis of Hydrogen Peroxide at Boron Doped Diamond Electrode Modified by Silver Nanoparticles and Haemoglobin

    International Nuclear Information System (INIS)

    The electrochemical detection of H2O2 using boron doped diamond electrode modified by silver nanoparticles and haemoglobin is reported. Silver nanoparticle obtained from electrodeposition in the presence of cetyl hexadecylthmoniom bromide (CTAB) surfactant shows the best combination of detection limit, sensitivity and reproducibility. The presence of Ag nanoparticles helps bind haemoglobin to the electrode in an active form, leading to a significantly further increase of electrode response to H2O2. Detection limits below 1 μM are achieved by a synergistic effect of both modifiers, and a good linear signal response is seen up to 8 mM. Interferences from glucose, uric acid, ascorbic acid and dopamine at typical physiological levels are shown to be negligible

  15. Application and film characterization of boron-doped PECVD TEOS for intermetal dielectric

    International Nuclear Information System (INIS)

    An interlayer dielectric (ILD) appropriate for multilevel wiring in submicron geometries has been developed based on TEOS chemistry. The application of a boron-doped plasma CVD TEOS (BSG) has proven to be capable of filling gaps with the aspect ratio up to 1:5:1. The film properties of BSG are studied as a function of process variables. Various analytical tools were employed in film characterization, consisting of : FTIR, for boron incorporation and moisture pick-up sensitivity; stress measurements as a function of time and temperature (hysteresis); wet etch rate in HF acid as an indirect measure of film density; thin film breakdown voltage (BVG) integrity. The dehydration cycle applied to different films indicates the presence of more moisture in the film deposited at lower RF powers. The C-V study of thin oxides (800-1000 A degrees) shows the existence of large trapped negative charges in the oxide leading to positive flatband voltage shift (5 volts). The device electrical characteristics and film's physical properties are correlated

  16. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  17. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  18. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  19. Continuous electrooxdiation of sulfuric acid on boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    Highlights: • highly concentrated sulfuric acid was electrochemically oxidized to peroxosulfuric compounds • Diachem® boron-doped diamond electrodes were used both as anode and cathode to oxidize the sulfuric acid • a manufactured cation selective membrane was used in an unconventional electrolyte circuit • concentrations equivalent to a common SPM bath were reached • an alternative setup was applied using only one electrolyte circuit - ABSTRACT: This study reports on the electrochemical oxidation of highly concentrated sulfuric acid by Diachem® boron-doped diamond electrodes. The scope of this work was to evaluate a proposed continuous electrooxidation process in order to prepare a resist removal bath that contains equivalent amounts of peroxosulfuric compounds as a common SPM (sulfuric acid and hydrogen peroxide mixture) bath. The electrochemical processes at the electrode surface were investigated by cyclic voltammetry and by titration of the reaction products under real working conditions (> 80 wt% H2SO4). Furthermore, an alternative electrolysis test cell setup, exhibiting a thin and mechanically stable ion exchange membrane will be used. For this process only one electrolyte circuit is performed. The initial electrolysis product H2S2O8 immediately undergoes hydrolysis and forms H2SO5. The obtained concentration of H2SO5 was similar to a reference SPM bath (> 0.14 mol l−1 H2SO5 in 90 wt% H2SO4), even though the current efficiency was lower than for more diluted solutions. This can be attributed to a complex interplay of side and consumption reactions of peroxosulfuric compounds. This electrolysis bath has the potential to be a very promising alternative to standard SPM baths, as it operates as a continuous and sustainable process

  20. Batch fabrication of mesoporous boron-doped nickel oxide nanoflowers for electrochemical capacitors

    International Nuclear Information System (INIS)

    Highlights: • A new facile liquid-phase method has been employed for synthesis boron-doped NiO nanoflowers. • The specific surface area of NiO is as high as 200 m2 g−1. • NiO nanoflowers exhibit a high specific capacitance of ∼1309 F g−1 at a charge and discharge current density of 3 A g−1. • NiO nanoflowers have excellent cycling ability and even after 2500 cycles there is no significant reduction in specific capacitance. - Abstract: Boron-doped nickel oxide (B-NiO) nanoflowers are prepared by simple thermal decomposition of nickel hydroxide. B-NiO is porous sphere with a diameter of about 400 nm. B-NiO nanoflowers are composed of approximately 30 nm nanoplates and the thickness of the nanosheets is approximately 3 nm. The specific surface area of the material is as high as 200 m2 g−1 and the pore size distribution curves of B-NiO has three typical peaks in the range of mesoporous (5 nm, 13 nm and 18 nm). As an electrode for supercapacitors, the crystalline B-NiO nanoflowers have favorable characteristics, for instance, a specific capacitance of 1309 F g−1 at a current density of 3 A g−1 and no significant reduction in Coulombic efficiency after 2500 cycles at 37.5 A g−1. This remarkable electrochemical performance will make B-NiO nanoflowers a promising electrode material for high performance supercapacitors

  1. Boron-doped diamond anodic oxidation of ethidium bromide: Process optimization by response surface methodology

    International Nuclear Information System (INIS)

    Highlights: ► Boron-doped diamond was used to degrade ethidium bromide. ► The process was optimized by a central composite rotatable design coupled with response surface methodology. ► Applied current is proved to be the most significant variable. ► A possible reaction sequence involving all the detected byproducts was proposed. - Abstract: The degradation of ethidium bromide (EtBr), a DNA intercalating pollutant, had been studied by anodic oxidation on boron-doped diamond (BDD) electrode under galvanostatic conditions. A central composite rotatable design coupled with response surface methodology was implemented to optimize the various operating parameters involved, among initial pH, flow rate, applied current and supporting electrolyte concentration, on the treatment efficiency; the latter was assessed in terms of color removal, COD removal, specific energy consumption and general current efficiency. Of the four parameters involved, applied current had a considerable effect on all the response factors. Optimum EtBr degradation was achieved by applying a current of 0.90 A, 9.0 mM Na2SO4, flow rate of 400 ml min−1 and pH 6.2 at 60 min of electrolysis, being reduced color by 80.2% and COD by 29.7%, with an energy consumption of 398.32 kW h (kg COD)−1 and a general current efficiency of 10.1%. Under these optimized conditions, EtBr decays followed pseudo first-order kinetics. Moreover, HPLC analysis of the BDD-treated solution allowed the detection of a number of reaction intermediates, and a possible reaction sequence involving all the detected byproducts was proposed for the electrochemical oxidation of EtBr on BDD anode.

  2. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

    OpenAIRE

    Will, Johannes; Gröschel, A.; Bergmann, C.; Spiecker, E.; Magerl, A.

    2014-01-01

    X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretatio...

  3. Boron

    International Nuclear Information System (INIS)

    The trace element boron (B) is of interest in reclamation situations for several reasons. It plays an essential through largely unidentified role in the growth of higher plants. In argronomic situations B deficiencies are common, and deficiencies in reclamation situations have been suggested but not documented. Among micronutrients, B is unique because the range from deficient concentrations to toxic concentrations either in the soil solution or in plant tissue is narrower than for any other micronutrient. In reclamation situations excessive amounts of B can occur in the soil or in near-surface mining wastes and thus interfere with reclamation objectives, especially in arid and semiarid regions. Also, B is mobile and appears subject to both upward transport (and possible contamination of overlying material) and downward transport (and possible contamination of surface water and groundwater)

  4. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  5. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    López-Albarrán, P. [Facultad de Ingeniería en Tecnología de la Madera, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Navarro-Santos, P., E-mail: pnavarrosa@conacyt.mx [Instituto de Investigaciones Químico-Biológicas, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Garcia-Ramirez, M. A. [Research Centre for Innovation in Aeronautical Engineering, Universidad Autónoma de Nuevo León, Ciudad Universitaria, San Nicolás de los Garza, CP 66451 Nuevo León (Mexico); Ricardo-Chávez, J. L. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Lomas 4" asección, CP 78216, San Luis Potosí, S. L. P. (Mexico)

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  6. Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

    International Nuclear Information System (INIS)

    Near-threshold irradiation of B-doped synthetic diamonds has been performed using a transmission electron microscope operated at 200 kV. Both chemical vapor deposited and high-pressure high-temperature synthesized samples have been studied. The B levels were in the range 1017-1019 cm-3. After irradiation the samples were studied by low temperature (∼7 K) photoluminescence spectroscopy using various excitation wavelengths. A number of characteristic optical centers have been observed in the spectral range 500-800 nm and these centers are reviewed. Details of the properties of the optical centers have been investigated and the results are summarized. In particular, two zero-phonon lines (ZPLs) at 636 and 666 nm, formed in boron-doped diamond materials after near displacement-threshold electron radiation damage, were found to be related. The nature of this relationship is studied by laser power dependence (at different wavelengths) of their intensities over a wide temperature range. The results are interpreted in terms of a three-level model for a single optical center that involves a dipole-forbidden excited state of lower energy and a dipole-allowed state of 90 meV higher energy. Similar behavior of a further pair of ZPLs at 650 and 668 nm also formed in these materials is discussed. The spatial distribution of centers and their alteration by ultraviolet excitation was used to investigate the nature of the 636 and 666 nm centers

  7. Boron doped g-C3N4 with enhanced photocatalytic UO22+ reduction performance

    Science.gov (United States)

    Lu, Changhai; Chen, Rongyue; Wu, Xi; Fan, Meifeng; Liu, Yunhai; Le, Zhanggao; Jiang, Shujuan; Song, Shaoqing

    2016-01-01

    Tuning the band gap and absorption intensity of visible-light by element doping is an attractive strategy to enhance the photocatalytic activity of semiconductor materials. Here we doped boron into g-C3N4 to construct highly efficient photocatalysts (B-g-C3N4) for the photocatalytic reduction of UO22+. Characterization and photocatalysis tests showed the band gap of B-g-C3N4 was narrowed, and the absorption intensity of visible-light was enhanced with increasing the formed N-B-C (BCN) of B-g-C3N4, which is consistent with the trend of the photocatalytic performance of B-g-C3N4. The optimized B-g-C3N4 photocatalyst with BCN content of 1.01 at.% exhibited excellent removal efficiency of UO22+ and good photocatalytic stability. Therefore, these results may lead to a new strategy for exploring the advanced photocatalysts based on the carbon nanomaterials with abundant BCN for the photocatalytic reduction of U(VI) pollutant.

  8. Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Orawon Chailapakul

    2008-03-01

    Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

  9. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    International Nuclear Information System (INIS)

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K 2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

  10. First-principles calculations on the structure and electronic properties of boron doping zigzag single-walled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Calculations have been made for single-walled zigzag(n,0) carbon nanotubes containing substitutional boron impurity atoms using ab initio density functional theory.It is found that the formation energies of these nanotubes depend on the tube diameter,as do the electronic properties,and show periodic fea-ture that results from their different π bonding structures compared to those of perfect zigzag carbon nanotubes.When more boron atoms are incorporated into a single-walled zigzag carbon nanotube,the substitutional boron atoms tend to come together to form structure of BC3 nanodomains,and B-doped tubes have striking acceptor states above the top of the valence bands.For the structure of BC3,there are two kinds of configurations with different electronic structures.

  11. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 1021 cm-3. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states

  12. HPHT Synthesis of Micron Grade Boron-Doped Diamond Single Crystal in Fe-Ni-C-B Systems

    International Nuclear Information System (INIS)

    Micron grade boron-doped diamond crystals with octahedral morphology are successfully synthesized in a Fe—Ni—C—B system under high pressure and high temperature (HPHT). The effects of the additive boron on synthesis conditions, nucleation and growth, crystal morphology of diamond are studied. The synthesized micron grade diamond crystals were characterized by optical microscope (OM), scanning electron microscope (SEM), x-ray diffraction (XRD) and Raman spectroscopy. The research results show that the V-shaped section of synthetic diamond moves downwards to the utmost extent due to 0.3a wt% (a is a constant.) boron added in the synthesis system. The crystal colour is black, and the average crystal size is about 25 μm. The crystal faces of synthetic diamond are mainly {111} face. The synthesis of this kind of diamond is few reported, and it will have important and widely applications. (cross-disciplinary physics and related areas of science and technology)

  13. Doped diamond electrodes on titanium substrates with controlled sp2/sp3 hybridization at different boron levels

    International Nuclear Information System (INIS)

    Doped diamond films on titanium substrate were systematically studied by controlling their sp2/sp3 hybridization as well as their boron doping levels. Samples were grown by hot filament chemical vapor deposition technique at CH4 additions of 1, 2, 6 and 10 sccm diluted in H2 for a total flow rate of 200 sccm. For each CH4 concentration four doping levels were studied. The boron source was obtained from a constant flow of 40 sccm for an additional H2 line passing through a bubbler containing the B2O3 dissolved in methanol with B/C ratios of 2000, 7000, 15,000, and 30,000 B/C ppm. Scanning electron microscopy images depicted well faceted films without cracks or delaminations. The sp2/sp3 ratio as “purity index” (PI) and the “growth tendency index” (GTI), associated to the TiC formation, were evaluated by Raman and X-ray spectra, respectively. GTI index was used in this work to analyze the competition between the diamond growth and TiC formation. It is also possible to associate the GTI index in terms of C/H ratio, since when this ratio is increased, the GTI index also increased. A constant GTI increase was observed as a function of CH4 addition for the whole range of the boron doping studied. For PI, an optimized value was observed at 6 sccm of CH4 for the doping levels higher than 2000 ppm of B/C ratio. - Highlights: • Control of experimental parameters to obtain good quality diamond films. • sp2 bond influence on the doping level of diamond films. • Systematic analysis of diamond growth process on Ti substrate

  14. Study of Electrochemical Degradation of Bromophenol Blue at Boron-doped Diamond Electrode by Using Factorial Design Analysis

    Directory of Open Access Journals (Sweden)

    Rong Fei

    2015-01-01

    Full Text Available As an ideal anode material, Boron-doped diamond (BDD has been widely applied in electro-chemical oxidation of various organic pollutants, for its unique physical and chemical properties. In this paper, the authors studied the degradation of bromophenol blue through the electrochemical anodic oxidation by using the boron-doped BDD as the anode. The effect of statistically important operating parameters on treatment per-formance, such as treatment time, flow rate, applied current and concentration of supporting electrolyte, was evaluated by employing a factorial design analysis in terms of color removal and COD removal amount. As a result, the BDD technology was approved to be highly effective in treating bromophenol blue. Moreover, the results revealed the applicability and potential of factorial design analysis in operating parameters optimization and practical engineering application of BDD technology.

  15. Investigation of catalytic activity towards oxygen reduction reaction of Pt dispersed on boron doped graphene in acid medium.

    Science.gov (United States)

    Pullamsetty, Ashok; Sundara, Ramaprabhu

    2016-10-01

    Boron doped graphene was prepared by a facile method and platinum (Pt) decoration over boron doped graphene was done in various chemical reduction methods such as sodium borohydride (NaBH4), polyol and modified polyol. X-ray diffraction analysis indicates that the synthesized catalyst particles are present in a nanocrystalline structure and transmission and scanning electron microscopy were employed to investigate the morphology and particle distribution. The electrochemical properties were investigated with the help of the rotating disk electrode (RDE) technique and cyclic voltammetry. The results show that the oxygen reduction reaction (ORR) takes place by a four-electron process. The kinetics of the ORR was evaluated using K-L and Tafel plots. The electrocatalyst obtained in modified polyol reduction method has shown the better catalytic activity compared to other two electrocatalysts. PMID:27393888

  16. Focused ion beam (FIB)-induced changes in the electrochemical behavior of boron-doped diamond (BDD) electrodes

    International Nuclear Information System (INIS)

    Micro- and nanostructured electrodes play a significant role in modern electroanalytical chemistry. Here, we report on the effect of focused ion beam-induced changes in the surface layers of nanocrystalline highly boron-doped diamond (BDD). The impact of gallium ions induces an amorphization of the surface layers of the BDD lattice, and hence, changes the electron transfer behavior of redox species, which electron transfer is sensitive to surface properties. These changes in heterogeneous electron transfer behavior are investigated in dependence of FIB patterning parameters. The effects of electrochemical post-milling treatments were studied for restoring the electrochemical properties. In addition, Raman spectroscopic and electron backscatter diffraction (EBSD) measurements revealed that amorphous carbon is largely removed during the post-milling electrochemical treatment at very negative potentials. Hence, FIB-based nanostructuring of BDD-electrodes with an optimized post fabrication treatment enables the fabrication of miniaturized devices based on boron-doped diamond for a wide variety of electroanalytical applications

  17. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  18. Preparation and visible-light-driven photoelectrocatalytic properties of boron-doped TiO2 nanotubes

    International Nuclear Information System (INIS)

    In the present study, chemical vapour deposition (CVD) was applied to dope boron into TiO2 nanotubes anodized Ti in C2H2O4.2H2O + NH4F electrolyte with the goal of improving the photocatalytic (PC) activity under visible light. The undoped TiO2 nanotubes had a highly self-organized structure. However, after doping through CVD, TiO2 nanotubes suffered from an observable disintegration of morphological integrity. X-ray diffraction (XRD) results confirmed that annealing temperature had an influence on the phase structure and boron impurities could retard anatase-rutile phase transition. Diffuse reflectance absorption spectra (DRS) analysis indicated that B-doped samples displayed stronger absorption in both UV and visible range. B-doped TiO2 nanotubes electrode annealed at 700 deg. C through CVD showed higher photoelectrocatalytic (PEC) efficiency in methyl orange (MO) degradation than that annealed at 400 deg. C and 550 deg. C. MO degradation was substantially enhanced with the increasing applied bias potential. Moreover, there was a synergetic effect between the electrochemical and photocatalytic processes, and the synergetic factor R reached 1.45. B-doped TiO2 nanotubes electrode showed good stability after 10 times by repeating photoelectrocatalysis of MO

  19. A theoretical study of silicon-doped boron nitride nanotubes serving as a potential chemical sensor for hydrogen cyanide

    International Nuclear Information System (INIS)

    In order to search for a novel sensor to detect and control exposure to hydrogen cyanide (HCN) pollutant molecule in environments, the reactivities of pristine and silicon-doped (Si-doped) (8, 0) single-walled boron nitride nanotubes (BNNTs) towards the HCN molecule are investigated by performing density functional theory (DFT) calculations. The HCN molecule presents strong chemisorption on both the silicon-substituted boron defect site and the silicon-substituted nitrogen defect site of the BNNT, which is in sharp contrast to its weak physisorption on pristine BNNT. A remarkable charge transfer occurs between the HCN molecule and the Si-doped BNNT as proved by the electronic charge densities. The calculated data for the electronic density of states (DOSs) further indicate that the doping of the Si atom improves the electronic transport property of the BNNT, and increases its adsorption sensitivity towards the HCN molecule. Based on calculated results, the Si-doped BNNT is expected to be a potential resource for detecting the presence of toxic HCN.

  20. Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

    Institute of Scientific and Technical Information of China (English)

    Shi Mingji; Wang Zhanguo; Liu Shiyong; Peng Wenbo; Xiao Haibo; Zhang Changsha; Zeng Xiangbo

    2009-01-01

    Boron-doped hydrogenated silicon films with different gaseous doping ratios (B2H6/SiH4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (Ea). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

  1. Boron Doped Diamond Electrode: Spectro/Photo/Electrochemistry and Prospective Application in Dye-Sensitized Solar Cell

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Vlčková Živcová, Zuzana; Krýsová, Hana; Petrák, Václav; Bartoň, Jan; Cígler, Petr; Nesládek, M.

    Angra dos Reis: International Society of Electrochemistry , 2015. 97. [Topical Meeting of the International Society of Electrochemistry . Electrochemical Properties and Applications of Advanced Carbon Materials /16./. 22.03.2015-26.03.2015, Angra dos Reis] R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 ; RVO:61388963 Keywords : boron doped diamond electrode * electrochemistry * dye-sensitized solar cell Subject RIV: CG - Electrochemistry

  2. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping

    Czech Academy of Sciences Publication Activity Database

    Alcaide, M.; Papaioannou, S.; Taylor, Andrew; Fekete, Ladislav; Gurevich, L.; Zachar, V.; Pennisi, C.P.

    2016-01-01

    Roč. 27, č. 5 (2016), s. 90. ISSN 0957-4530 Grant ostatní: FUNBIO(XE) CZ.2.16/3.1.00/21568; FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : protein adsorption * fibroblasts adhesion * nanocrystalline diamond * boron doping * topography Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.587, year: 2014

  3. Electron-phonon interaction in boron-doped silicon nanocrystals: effect of Fano interference on combined light scattering

    International Nuclear Information System (INIS)

    The arrays of the silicon nanocrystals in the boron-doped amorphous silicon films are studied by the method of the light combined scattering spectroscopy. The nanocrystals were formed in the initial amorphous films under the pulse effect of the excimer laser. The effects of the electron-phonon interaction were experimentally identified in the silicon nanocrystal/amorphous matrix heterostructure. These effects may be described within the frames of the known Fano interference model

  4. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis

    OpenAIRE

    Lewis, Grace E M; Gross, Andrew J.; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-01-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming “external” process to an analyte regenerating “internal” process wi...

  5. Electrochemistry and in situ Raman spectroelectrochemistry of low and high quality boron doped diamond layers in aqueous electrolyte solution

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Frank, Otakar; Petrák, Václav; Tarábková, Hana; Vacík, Jiří; Nesládek, M.; Kavan, Ladislav

    2013-01-01

    Roč. 87, JAN 2013 (2013), s. 518-525. ISSN 0013-4686 R&D Projects: GA AV ČR IAA400400804; GA AV ČR KAN200100801 Grant ostatní: European Commission CORDIS(XE) FP7-ENERGY-2010-FET, projekt 256617 Institutional support: RVO:61389005 ; RVO:61388955 ; RVO:68378271 Keywords : boron doped diamond * electrochemistry * aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 4.086, year: 2013

  6. Voltammetric method for sensitive determination of herbicide picloram in environmental and biological samples using boron-doped diamond film electrode

    International Nuclear Information System (INIS)

    The voltammetric behavior and determination of picloram, a member of a pyridine herbicide family, was for the first time investigated on a boron doped diamond film electrode using cyclic and differential pulse voltammetry. The influence of supporting electrolyte and scan rate on the current response of picloram was examined to select the optimum experimental conditions. It was found that picloram provided one well-shaped oxidation peak at very positive potential (+1.5 V vs. Ag/AgCl electrode) in strong acidic medium. At optimized differential pulse voltammetric parameters, the current response of picloram was proportionally linear in the concentration range from 0.5 to 48.07 μmol L−1 and the low limit of detection of 70 nmol L−1 as well as good repeatability (relative standard deviation of 2.6% at 10 μmol L−1 for n = 11) were obtained on unmodified boron-doped diamond film electrode. The proposed method was successfully applied in analysis of environmental (tap and natural water) and biological (human urine) samples spiked with picloram with good accuracy (relative standard deviations less than 5% for all samples, n = 5). By this way, the boron-doped diamond could introduce a green (environmentally acceptable) alternative to mercury electrodes for the monitoring of herbicides

  7. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    International Nuclear Information System (INIS)

    Highlights: ► Synthesis of Boron doped ZnO (ZnO:B) films. ► Minimum of resistivity is observed to be 7.9 × 10−4 Ω cm. ► Maximum transmittance ∼91% for 450 °C annealed films. ► Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol–gel method are reported. The annealing temperature is varied from 350 to 550 °C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 × 10−4 Ω cm and maximum transmittance of ∼91% are observed for the film annealed at 450 °C. This could be attributed to minimum stress of films, which is further evident by the evolution of A1 and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  8. Optical and electronic properties of SO2 molecule adsorbed on Si-doped (8, 0) boron nitride nanotube

    Science.gov (United States)

    Guo, Shuang-Shuang; Wei, Xiu-Mei; Zhang, Jian-Min; Zhu, Gang-Qiang; Guo, Wan-Jin

    2016-09-01

    The study of the optical properties of pristine BNNT, Si-doped BNNTs and SO2 molecule adsorption on Si-doped BNNTs is that, to our knowledge, few relevant research have ever been found. In this paper, the adsorption behaviors of Sulfur dioxide (SO2) molecule on Si-doped Boron nitride nanotubes (BNNTs) are investigated applying the first-principles calculations. The main contribution of this paper is that the foremost investigation for the optical properties of the pristine BNNT, Si-doped BNNTs and SO2 adsorption on Si-doped BNNTs. Additionally, the electronic properties and the structural properties are also presented. In our calculations of optical properties, the dielectric constant, the refractive index and the absorption coefficient are obtained. Comparing the pristine BNNT, our results indicate that, the blue-shifts (in the main peaks of the dielectric constant of SiB -BNNT and SO2-SiB -BNNT), and the red-shifts (in the main peaks of the refractive index of SiN -BNNT and SO2-SiN -BNNT) are appeared. Under these conditions, Si-doped BNNT and Si-doped BNNT with SO2 adsorption, the gaps are reduced both for the speculated optical band gaps and the electronic structure band gaps.

  9. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  10. Functionalization of boron-doped nanocrystalline diamond with N3 dye molecules.

    Science.gov (United States)

    Yeap, W S; Liu, X; Bevk, D; Pasquarelli, A; Lutsen, L; Fahlman, M; Maes, W; Haenen, K

    2014-07-01

    N3 dye molecules [cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)ruthenium(II)] are covalently attached to boron-doped nanocrystalline diamond (B:NCD) thin films through a combination of coupling chemistries, i.e., diazonium, Suzuki, and EDC-NHS. X-ray and ultraviolet photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy are used to verify the covalent bonding of the dye on the B:NCD surface (compared to a hydrogen-terminated reference). The spectroscopic results confirm the presence of a dense N3 chromophore layer, and the positions of the frontier orbitals of the dye relative to the band edge of the B:NCD thin film are inferred as well. Proof-of-concept photoelectrochemical measurements show a strong increase in the photocurrent compared to non-dye-functionalized B:NCD films. This study opens up the possibility of applying N3-sensitized B:NCD thin films as hole conductors in dye-sensitized solar cells. PMID:24915549

  11. Direct and Simultaneous Determination of Phenol, Hydroquinone and Nitrophenol at Boron-Doped Diamond Film Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHAO, Guo-Hua; TANG, Yi-Ting; LIU, Mei-Chuan; LEI, Yan-Zhu; XIAO, Xiao-E

    2007-01-01

    The electrochemical characteristics of multi-component phenolic pollutants, such as phenol (Ph), hydroquinone (HQ) and 4-nitrophenol (4-NP), were investigated on boron-doped diamond (BDD) film electrode by differential pulse voltammetry (DPV) technique. A simple and feasible platform was accordingly established for the direct and simultaneous determination of these three phenolic pollutants. Results showed that, Ph, HQ and 4-NP gave obvious oxidation peaks on BDD electrode at the potential of 1.24, 0.76 and 1.52 V, respectively. Each of them displayed good linear relationship between their oxidation peak currents and their corresponding concentrations in a rather wide range coexisting with one or two of the other phenolic pollutants. The detection limits of Ph, HQ and 4-NP were estimated to be as low as 1.82×10-6, 1.67×10-6 and 1.44×10-6mol·L-1, respectively. Therefore, a promising direct and simultaneous electrochemical determination method of multi-component phenolic pollutants in wastewater samples was constructed successfully on BDD electrode with advantages being rapid, simple, convenient, sensitive, in situ and inexpensive.

  12. Electrochemical oxidation of oxalic acid in the presence of halides at boron doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Huitle, C.A. [University of Milan, Milan (Italy). Dept. of Analytical Chemistry]. E-mail: Carlos.Martinez@unimi.it; Ferro, S.; Battisti, A. de [University of Ferrara (Italy). Dept. of Chemistry. Lab. of Electrochemistry; Reyna, S.; Cerro-Lopez, M.; Quiroz, M.A. [Universidad de las Americas-Puebla, Puebla (Mexico). Dept. de Quimica y Biologia. Lab. de Electroquimica]. E-mail: marcoa.quiroz@udlap.mx

    2008-07-01

    Aim of this work is to discuss the electrochemical oxidation of oxalic acid (OA), analyzing the influence of NaCl and NaBr. Experiments were carried out at boron-doped diamond (BDD) electrodes, in alkaline media. BDD electrodes have a poor superficial adsorptivity so their great stability toward oxidation allows the reaction to take place with reactants and intermediates in a non-adsorbed state. The process is significantly accelerated by the presence of a halogen salt in solution; interestingly, the mediated process does not depend on applied current density. Based on the results, bromide was selected as a suitable mediator during OA oxidation at BDD. Br{sup -} primarily acts in the volume of the solution, with the formation of strong oxidants; while Cl{sup -} action has shown lower improvements in the OA oxidation rate at BDD respect to the results reported using Pt electrode. Finally, the parameters of removal efficiency and energy consumption for the electrochemical incineration of OA were calculated. (author)

  13. Neutron radiations effects on tungsten and vanadium oxides doped with boron

    International Nuclear Information System (INIS)

    We present the preliminary results of the Monte Carlo simulation of the damage produced in thin tungsten and vanadium oxide doped with boron by the α particles and lithium ions (Li+), generated as a result of the nuclear reaction 10B(n, α)7Li. The algorithm used in the simulation is based on the technique of approach of binary collisions, implemented in the package TRIM. In the numerical experiment are generated randomly α particles and ions 7Li with energy 1473 ± 50keV and 840 ± 50keV respectively, that soon interacts with the components of the material. The important parameter as the nuclear and electronic stopping power of both particles is calculated. The average walk of α particles in V2O5 is approximately 3,78 μm, whereas in amorphous WO3 is 4,19 μm. We observed that there is greater damage produced by particles of 7Li, in comparison that the produced by α particles for both materials. (author)

  14. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Ciprian Radovan

    2008-06-01

    Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

  15. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    Science.gov (United States)

    Zhou, Bo; Yu, Zhiming; Wei, Qiuping; Long, HangYu; Xie, Youneng; Wang, Yijia

    2016-07-01

    In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH3sbnd N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm-2, pH 5.16, flow velocity 6 L h-1. Under these conditions, 87.5% COD and 74.06% NH3sbnd N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m-3. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  16. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  17. Electrochemical degradation of chlorobenzene on boron-doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Liu Lei [Department of Chemistry, Tongji University, Shanghai, 200092 (China); Zhao Guohua, E-mail: g.zhao@tongji.edu.cn [Department of Chemistry, Tongji University, Shanghai, 200092 (China); Wu Meifen; Lei Yanzhu; Geng Rong [Department of Chemistry, Tongji University, Shanghai, 200092 (China)

    2009-08-30

    In this paper the electrochemical degradation of chlorobenzene (CB) was investigated on boron-doped diamond (BDD) and platinum (Pt) anodes, and the degradation kinetics on these two electrodes was compared. Compared with the total mineralization with a total organic carbon (TOC) removal of 85.2% in 6 h on Pt electrode, the TOC removal reached 94.3% on BDD electrode under the same operate condition. Accordingly, the mineralization current efficiency (MCE) during the mineralization on BDD electrode was higher than that on the Pt electrode. Besides TOC, the conversion of CB, the productions and decay of intermediates were also monitored. Kinetic study indicated that the decay of CB on BDD and Pt electrodes were both pseudo-first-order reactions, and the reaction rate constant (k{sub s}) on BDD electrode was higher than that on Pt electrode. The different reaction mechanisms on the two electrodes were investigated by the variation of intermediates concentrations. Two different reaction pathways for the degradation of CB on BDD electrode and Pt electrode involving all these intermediates were proposed.

  18. Electrochemical degradation of chlorobenzene on boron-doped diamond and platinum electrodes.

    Science.gov (United States)

    Liu, Lei; Zhao, Guohua; Wu, Meifen; Lei, Yanzhu; Geng, Rong

    2009-08-30

    In this paper the electrochemical degradation of chlorobenzene (CB) was investigated on boron-doped diamond (BDD) and platinum (Pt) anodes, and the degradation kinetics on these two electrodes was compared. Compared with the total mineralization with a total organic carbon (TOC) removal of 85.2% in 6h on Pt electrode, the TOC removal reached 94.3% on BDD electrode under the same operate condition. Accordingly, the mineralization current efficiency (MCE) during the mineralization on BDD electrode was higher than that on the Pt electrode. Besides TOC, the conversion of CB, the productions and decay of intermediates were also monitored. Kinetic study indicated that the decay of CB on BDD and Pt electrodes were both pseudo-first-order reactions, and the reaction rate constant (k(s)) on BDD electrode was higher than that on Pt electrode. The different reaction mechanisms on the two electrodes were investigated by the variation of intermediates concentrations. Two different reaction pathways for the degradation of CB on BDD electrode and Pt electrode involving all these intermediates were proposed. PMID:19264395

  19. Mineralization of bisphenol A (BPA) by anodic oxidation with boron-doped diamond (BDD) electrode

    International Nuclear Information System (INIS)

    Anodic oxidation of bisphenol A (BPA), a representative endocrine disrupting chemical, was carried out using boron-doped diamond (BDD) electrode at galvanostatic mode. The electro-oxidation behavior of BPA at BDD electrode was investigated by means of cyclic voltammetric technique. The extent of degradation and mineralization of BPA were monitored by HPLC and total organic carbon (TOC) value, respectively. The results obtained, indicate that the BPA removal at BDD depends on the applied current density (Iappl), initial concentration of BPA, pH of electrolyte and supporting medium. Galvanostatic electrolysis at BDD anode cause concomitant generation of hydroxyl radical that leads to the BPA destruction. The kinetics for the BPA degradation follows a pseudo-first order reaction with a higher rate constant 12.8 x 10-5 s-1 for higher Iappl value 35.7 mA cm-2, indicating that the oxidation reaction is limited by Iappl control. Complete mineralization of BPA was achieved regardless of the variables and accordingly the mineralization current efficiency was calculated from the TOC removal measurements. Considering global oxidation process, the effect of supporting electrolytes has been discussed in terms of the electro generated inorganic oxidants. The better performance of BDD anode was proved on a comparative study with Pt and glassy carbon under similar experimental conditions. A possible reaction mechanism for BPA degradation involving three main aromatic intermediates, identified by GC-MS analysis, was proposed

  20. Electrochemical determination of bisphenol A using a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    An electrochemical method was developed for the determination of bisphenol A (BPA) at an unmodified boron-doped diamond (BDD) electrode using differential pulse voltammetry (DPV). The sensitivity of the DPV measurements was significantly improved by using a predominantly hydrogen-terminated BDD electrode obtained by a cathodic pretreatment. A highly linear analytical curve was obtained for BPA determination in the range of 0.44–5.2 μmol L−1, with quantification and detection limits of 0.71 μmol L−1 and 0.21 μmol L−1, respectively. After assuring that the results obtained with the developed DPV method did not change in the presence of possible interferents, the method was successfully applied to monitor the concentration of BPA as it was electrooxidized in a flow reactor with an Nb/BDD anode. As far as it could be verified, the proposed electroanalytical method is the first one based on the use of an unmodified electrode.

  1. Degradation of microcystin-RR using boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (cNaCl) and applied current density (Iappl). Full and quick removal of 0.50 μg/ml MC-RR in solution was achieved when the operating conditions of cNaCl and Iappl were 20 mM and 46.3 mA/cm2, or 35 mM and 18.2 mA/cm2 respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

  2. Anodic oxidation of textile dyehouse effluents on boron-doped diamond electrode

    International Nuclear Information System (INIS)

    The electrochemical oxidation of textile effluents over a boron-doped diamond anode was investigated in the present study. Experiments were conducted with a multi-component synthetic solution containing seventeen dyes and other auxiliary inorganics, as well as an actual effluent from a textile dyeing process. The effect of varying operating parameters, such as current density (4–50 mA/cm2), electrolyte concentration (0.1–0.5 M HClO4), initial solution pH (1–12.3) and temperature (22–43 °C), on process efficiency was investigated following changes in total organic carbon (TOC), chemical oxygen demand (COD) and color. Complete decolorization accompanied by significant mineralization (up to 85% depending on the conditions) could be achieved after 180 min of treatment. Performance was improved at higher electrolyte concentrations and lower pH values, while the effect of temperature was marginal. Energy consumption per unit mass of COD removed was favored at lower current densities, since energy was unnecessarily wasted to side reactions at higher densities.

  3. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

    2009-07-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  4. Amperometric oxygen sensor based on a platinum nanoparticle-modified polycrystalline boron doped diamond disk electrode.

    Science.gov (United States)

    Hutton, Laura; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

    2009-02-01

    Pt nanoparticle (NP)-modified polycrystalline boron-doped diamond (pBDD) disk electrodes have been fabricated and employed as amperometric sensors for the determination of dissolved oxygen concentration in aqueous solution. pBDD columns were cut using laser micromachining techniques and sealed in glass, in order to make disk electrodes which were then characterized electrochemically. Electrodeposition of Pt onto the diamond electrodes was optimized so as to give the maximum oxygen reduction peak current with the lowest background signal. Pt NPs, >0-10 nm diameter, were found to deposit randomly across the pBDD electrode, with no preference for grain boundaries. The more conductive grains were found to promote the formation of smaller nanoparticles at higher density. With the use of potential step chronoamperometry, in which the potential was stepped to a diffusion-limited value, a four electron oxygen reduction process was found to occur at the Pt NP-modified pBDD electrode. Furthermore the chronoamperometric response scaled linearly with dissolved oxygen concentration, varied by changing the oxygen/nitrogen ratio of gas flowed into solution. The sensor was used to detect dissolved oxygen concentrations with high precision over the pH range 4-10. PMID:19117391

  5. Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

    Institute of Scientific and Technical Information of China (English)

    HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

    2009-01-01

    The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

  6. Determination of trace amounts of uranium by stripping voltammetry using a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Stripping voltammetry using a boron-doped diamond (BDD)-electrode is described for the determination of uranium. A uranium solution adjusted to pH 3 was supplied to the surface of an electrode continuously by a carrier solution at 0.10 mL min-1, and uranium in the solution was accumulated. An accumulation potential of -2.5 V (vs. Ag/AgCl) was applied to the BDD-electrode. After the accumulation step, the flow of the carrier solution was stopped and the stripping voltammogram, ranging from -2.5 V to 1.0 V (vs. Ag/AgCl), was recorded. A linear relationship between the stripping peak current and the uranium concentration existed in the range from 0 to 1270 ng mL-1, and the relative standard deviation of five repeated analyses was approximately 5% for 0.50 mL of an uranium standard solution of 127 ng mL-1. The method was applied to the determination of uranium in low active liquid wastes from a spent nuclear-fuel reprocessing plant. (author)

  7. Energy consumption of electrooxidation systems with boron-doped diamond electrodes in the pulse current mode

    Science.gov (United States)

    Wei, Jun-jun; Gao, Xu-hui; Hei, Li-fu; Askari, Jawaid; Li, Cheng-ming

    2013-01-01

    A pulse current technique was conducted in a boron-doped diamond (BDD) anode system for electrochemical wastewater treatment. Due to the strong generation and weak absorption of hydroxyl radicals on the diamond surface, the BDD electrode possesses a powerful capability of electrochemical oxidation of organic compounds, especially in the pulse current mode. The influences of pulse current parameters such as current density, pulse duty cycle, and frequency were investigated in terms of chemical oxygen demand (COD) removal, average current efficiency, and specific energy consumption. The results demonstrated that the relatively high COD removal and low specific energy consumption were obtained simultaneously only if the current density or pulse duty cycle was adjusted to a reasonable value. Increasing the frequency slightly enhanced the COD removal and average current efficiency. A pulse-BDD anode system showed a stronger energy saving ability than a constant-BDD anode system when the electrochemical oxidation of phenol of the two systems was compared. The results prove that the pulse current technique is more cost-effective and more suitable for a BDD anode system for real wastewater treatment. A kinetic analysis was presented to explain the above results.

  8. Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

    International Nuclear Information System (INIS)

    Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The concentrations of dissolved interstitial iron reduce by more than 90% after a 30-min anneal at temperatures between 600 and 900 °C. The most effective reduction occurs at 700 °C, where 99% of the initial dissolved iron is hydrogenated after 30 min. The results show that the observed reductions in interstitial Fe concentrations are not caused by the internal gettering of Fe at structural defects or by an enhanced diffusivity of Fe due to the presence of hydrogen. The hydrogenation process is conjectured to be the pairing of positively charged iron with negatively charged hydrogen, forming less recombination active Fe-H complexes in silicon

  9. Microfluidic platform for environmental contaminants sensing and degradation based on boron-doped diamond electrodes.

    Science.gov (United States)

    Medina-Sánchez, Mariana; Mayorga-Martinez, CarmenC; Watanabe, Takeshi; Ivandini, TribidasariA; Honda, Yuki; Pino, Flavio; Nakata, Kazuya; Fujishima, Akira; Einaga, Yasuaki; Merkoçi, Arben

    2016-01-15

    We have developed a lab-on-a-chip (LOC) platform for electrochemical detection and degradation of the pesticide atrazine (Atz). It is based on boron-doped diamond (BDD) electrodes and a competitive magneto-enzyme immunoassay (EIA) that enables high sensitivity. To detect the enzymatic reaction, we employed a BDD electrode modified with platinum nanoparticles (PtNPs), as a highly conductive catalytic transducer. Chronoamperometry revealed a limit of detection (LOD) of 3.5 pM for atrazine, which, to the best of our knowledge, is one of the lowest value published to date. Finally, we degraded Atz in the same platform, using a bare BDD electrode that features remarkable corrosion stability, a wide potential window, and much higher O2 overvoltage as compared to conventional electrodes. These characteristics enable the electrode to produce a greater amount of HO• on the anode surface than do conventional electrodes and consequently, to destroy the pollutant more rapidly. Our new LOC platform might prove interesting as a smart system for detection and remediation of diverse pesticides and other contaminants. PMID:26339934

  10. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Energy Technology Data Exchange (ETDEWEB)

    Lovics, R.; Csik, A., E-mail: csik@atomki.hu; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO{sub 2} diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  11. Adsorption properties of boroxol ring doped zigzag boron nitride nanotube toward NO molecule using DFT

    Science.gov (United States)

    Zahedi, Ehsan; Babaie, Mahsa; Bahmanpour, Hooman

    2016-05-01

    In previous researches it is demonstrated that reactivity and sensitivity of boron nitride nanotubes (BNNTs) toward gas molecules can be modified by impurity. In this work, oxygen defect for three nitrogen sites was used to study the adsorption of NO molecule through the surface of boroxol ring of oxygen doped BNNT (7,0) with different adsorption patterns, including side-on and end-on. All calculations are performed using the DFT-B3LYP/6-31G∗ level of theory, and their electronic energies are corrected by gCP and D3 correction terms. High binding energies indicate that NO molecule undergoes chemical adsorption with large charge transfer from the tube which can significantly change electronic properties of the tube. Density of state (DOS) and partial DOS (PDOS) analyses revealed that adsorption of NO molecule on the boroxol ring position is covalent in nature with significant effect on the electronic properties of tube. The Laplacian of electron density, Lagrangian kinetic energy density, Hamiltonian kinetic energy density and potential energy density at bond critical points between the tube and NO indicate that the interaction between the tube and NO molecule is covalent in nature. Topological analysis of the electron localization function shows that electrons in the new formed bonds are approximately localized, meaning that the nature of adsorption process is chemical covalent. The studied nanotube is a suitable candidate to filter and eliminate NO gas molecule.

  12. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Science.gov (United States)

    Lovics, R.; Csik, A.; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  13. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    Science.gov (United States)

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species. PMID:27372123

  14. Anodic oxidation of 1,4-dioxane on boron-doped diamond electrodes for wastewater treatment

    International Nuclear Information System (INIS)

    A study of the anodic oxidation of 1,4-dioxane, a refractory water pollutant, by boron-doped diamond (BDD) electrodes was carried out under a range of major system variables: initial concentration, current density, temperature, pH, and electrolyte concentration. The 1,4-dioxane removal behavior was monitored by chemical oxygen demand (COD), and the results were compared with theoretical models for the electrochemical incineration of organic compounds. The removal efficiency of COD was shown to be greater than 95% in most cases, and no electrode fouling was observed during the reaction. Experimental degradation behavior agreed well with the theoretical models, implying that system variables can be predicted, even when the process is applied at pilot scale. Processes conducted at lower initial concentrations and higher temperatures yielded better energy consumption efficiency. Conditions of higher current density yielded faster degradation but need greater quantities of charge loading into the system. Therefore, a compromise between treatment time and energy consumption is required to achieve the desired efficiency. Meanwhile, pH and electrolyte concentrations did not affect reaction efficiency, suggesting that pH adjustment prior to wastewater treatment is not necessary. Thus, anodic oxidation of 1,4-dioxane by BDD electrodes promises to be both an economical and an efficient in wastewater treatment process.

  15. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    Science.gov (United States)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  16. Studies on the oxygen precipitation in highly boron doped silicon; Untersuchungen zur Sauerstoffausscheidung in hoch bordotiertem Silicium

    Energy Technology Data Exchange (ETDEWEB)

    Zschorsch, Markus

    2007-12-14

    The aim of this thesis was the getting of new knowledge on the elucidation of the oxygen precipitation in highly doped silicon. In the study of the early phases of the oxygen precipitation boron-oxygen complexes and their kinetics could be indirectly detected. These arise already during the cooling of the crystal and can be destroyed by subsequent temperature processes. The formation of the here as BO assumed species during the cooling after the silicon crystal fabrication could be numerically reproduced. Furthermore the study of early precipitation phases by means of neutron small angle scattering a maximum of the oxygen precipitation at {rho}=9 m{omega}cm. It could be shown that the decreasing of this at increasing boron concentration can be most probably reduced to boron precipitations. Furthermore it could be shown that after a tempering time of 24 hours at 700 C in silicon with {rho}=9 m{omega}cm platelet-shaped precipitates form. By the study of the precipitate growth could be shown that also in this phase the oxygen precipitation in silicon is strongest with a specific resistance of {rho}=9 m{omega}cm. By means of FTIR spectroscopy a new absorption band at a wave number of 1038 cm{sup -1} was found, which could be assigned to a boron species. By different experiments it is considered as probable that at this species it deals with BI respectively B{sub 2}I complexes.

  17. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Will, J., E-mail: will@krist.uni-erlangen.de; Gröschel, A.; Bergmann, C.; Magerl, A. [Crystallography and Structural Physics, University of Erlangen-Nürnberg, Staudtstr. 3, 91058 Erlangen (Germany); Spiecker, E. [Center for Nanoanalysis and Electron Microscopy, University of Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen (Germany)

    2014-03-28

    X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm{sup 2}) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.

  18. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

    International Nuclear Information System (INIS)

    X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm2) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C

  19. Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance

    International Nuclear Information System (INIS)

    Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 deg. C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV-VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.

  20. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

    2013-06-01

    We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

  1. Improved electrochemical performance of boron-doped SiO negative electrode materials in lithium-ion batteries

    Science.gov (United States)

    Woo, Jihoon; Baek, Seong-Ho; Park, Jung-Soo; Jeong, Young-Min; Kim, Jae Hyun

    2015-12-01

    We introduce a one-step process that consists of thermal disproportionation and impurity doping to enhance the reversible capacity and electrical conductivity of silicon monoxide (SiO)-based negative electrode materials in Li-ion batteries. Transmission electron microscope (TEM) results reveal that thermally treated SiO at 900 °C (H-SiO) consists of uniformly dispersed nano-crystalline Si (nc-Si) in an amorphous silicon oxide (SiOx) matrix. Compared to that of prinstine SiO, the electrochemical performance of H-SiO shows improved specific capacity, due mainly to the increased reversible capacity by nc-Si and to the reduced volume expansion by thermally disproportionated SiOx matrix. Further electrochemical improvements can be obtained by boron-doping on SiO (HB-SiO) using solution dopant during thermal disproportionation. HB-SiO electrode without carbon coating exhibits significantly enhanced specific capacity superior to that of undoped H-SiO electrode, having 947 mAh g-1 at 0.5C rate and excellent capacity retention of 93.3% over 100 cycles. Electrochemical impedance spectroscopy (EIS) measurement reveals that the internal resistance of the HB-SiO electrode is significantly reduced by boron doping.

  2. Efficient Photocatalytic Hydrogen Evolution over Platinum and Boron Co-doped TiO2 Photoatalysts

    Directory of Open Access Journals (Sweden)

    Zhiliang JIN

    2014-12-01

    Full Text Available In this paper, the new photocatalyst, Ptx-/TiO2-yBy was prepared by impregnation method via coupling with a inorganic water splitting system, namely, a ternary system K+,Na+/B4O72- - H2O for hydrogen evolution. The integration process of the preparation for B doping Pt/TiO2 with the significant photocatalytic hydrogen evolution in the ternary system K+,Mg2+/B4O72- - H2O and K+,Na+/B4O72- - H2O were accomplished by impregnation in situ. The photocatalyst Ptx-/TiO2-yBy synthesis and the photocatalytic hydrogen production of the isothermal solubility of the ternary system K+,Mg2+/B4O72- - H2O and K+,Na+/B4O72- - H2O at 25 ºC have been studied. Thus, the present challenge is not only to demonstrate a suitable photocatalytical system that can efficiently produce hydrogen under the borate exsited, but also research that the addition of borate to the suspensions greatly enhanced the stability of the  photocatalysts over semiconductor catalysts.The results show that borate solution is a suitable for B doped TiO2 photocatalysts preparation and a novel photocatalyst Ptx-/TiO2-yBy was successfully prepared by this way. XRD and XPS characterization showed that both anatase and rutile are coexisted and the B is incorporated into the crystal of the TiO2.So the TiO2 can be denoted as TiO2-xBx. The effect of borate on the photocatalytic properties were investigated. The results showed that the amount of hydrogen evolved is enhanced by factors of 4 with the addition of H3BO3 to the ethanol/water reaction solutions. The role of boron anion does not act as a sacrificial electron donors. DOI: http://dx.doi.org/10.5755/j01.ms.20.4.6412

  3. Effect of reaction conditions on methyl red degradation mediated by boron and nitrogen doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Galenda, A., E-mail: galenda@ieni.cnr.it [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy); Crociani, L.; Habra, N. El; Favaro, M. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy); Natile, M.M. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Dipartimento di Scienze Chimiche, Università di Padova, via F. Marzolo, 1 35131 Padova (Italy); Rossetto, G. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy)

    2014-09-30

    Highlights: • Boron and/or nitrogen-doped TiO{sub 2} for photocatalytic wastewater treatment. • Methyl red degradation/mineralisation as a function of pH, acids and dopants. • Adsorption time influence on photocatalytic process. • Recovery of worn-out catalyst. - Abstract: Nowadays the employment of renewable and sustainable energy sources, and solar light as main option, becomes an urgent need. Photocatalytic processes received great attention in wastewater treatment due to their cheapness, environmental compatibility and optimal performances. Despite the general low selectivity of the photocatalysts, an accurate optimisation of the operational parameters needs to be carried out in order to maximise the process yield. Because of this reason, the present contribution aims to deepen either the knowledge in boron and/or nitrogen doped TiO{sub 2}-based systems and their employment in methyl red removal from aqueous solutions. The samples were obtained by coprecipitation and characterised by XRD, SEM, BET specific surface area, UV–vis and XPS techniques. The catalytic activity was for the first time carefully evaluated with respect to methyl red photodegradation in different conditions as a function of working pH, counter-ions and pre-adsorption time. An ad-hoc study was performed on the importance of the pre-adsorption of the dye, suggesting that an extended adsorption is useless for the catalyst photoactivity, while a partial coverage is preferable. The photocatalytic tests demonstrate the positive influence of boron doping in photo-activated reactions and the great importance of the operational parameters with respect to the simple methyl red bleaching rather than the overall pollutant mineralisation. It is proved, indeed, that different working pH, acidifying means and substrate pre-adsorption time can enhance or limit the catalyst performances with respect to the complete pollutant degradation rather than its partial breakage.

  4. Electrochemical degradation of PNP at boron-doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanrong, E-mail: yanrong_zhang@mail.hust.edu.cn [Environmental Science Research Institute, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang, Nan [Environmental Science Research Institute, Huazhong University of Science and Technology, Wuhan 430074 (China); Murugananthan, Muthu [Dept of Chemistry and Applied Chemistry, PSG College of Technology, Peelamedu, Coimbatore 641 004 (India); Yoshihara, Sachio [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2013-01-15

    Highlights: ► Low concentration of Cl{sup −} could improve the removal of PNP. ► High chlorine concentration inhibited the COD removal. ► BDD electrode was highly effective for the conversion of PNP to organic acids. ► Accumulation of degradation intermediates was happened at Pt electrode. -- Abstract: The electrochemical degradation of p-nitrophenol (PNP) at boron-doped diamond (BDD) and platinum (Pt) anodes was studied by varying the parameters such as Cl{sup −} concentration, pH of aqueous medium and applied current density. The results obtained were explained in terms of in situ concomitant generation of hydroxyl radicals and chloride based oxidant species. The degradation of PNP was highly promoted in low concentration of NaCl electrolyte (less than 0.10 M), on contrary, the mineralization efficiency was poor at both BDD and Pt anodes with the NaCl concentration up to 0.20 M, which was ascribed to the formation of refractory chlorinated organic compounds. A maximum of 100% and 70% of COD removal was achieved in 5 h of electrolysis period using both BDD and Pt anodes under similar experimental conditions. Kinetic study indicated that the degradation of PNP at BDD and Pt anodes followed pseudo-first-order reactions, and the reaction rate constant (k{sub s}) of the former was observed to be higher than that of the latter. Besides COD, conversion of PNP into various intermediate compounds and their degradations were also monitored. The mechanisms for PNP degradation at BDD and Pt anodes were proposed separately by considering the nature of respective intermediate species and their concentrations.

  5. Sulfate-mediated electrooxidation of X-ray contrast media on boron-doped diamond anode.

    Science.gov (United States)

    Radjenovic, Jelena; Petrovic, Mira

    2016-05-01

    Recently, electrochemical activation of sulfate ions to sulfate radical species and nonradically activated persulfate has been demonstrated at boron-doped diamond (BDD) anode, which enhanced the electrooxidation kinetics of several persistent contaminants. In this study, we investigated the transformation pathways of two X-ray contrast media (ICM), diatrizoate and iopromide, in electrooxidation at BDD anode using sulfate and inert nitrate anolyte. Sulfate anolyte yielded a seven-fold increase in apparent rate constants for ICM oxidation compared to inert nitrate anolyte, and a two-fold increase for the removal of organic carbon. Higher iodine release was observed in electrooxidation of diatrizoate compared to iopromide. In the case of diatrizoate, around 80% of deiodination efficiency was achieved in both anolytes. Deiodination efficiency of iopromide was somewhat lower in nitrate anolyte (≤75%) and significantly reduced in sulfate anolyte (≤46%) due to a larger steric hindrance of alkyl side chains. Moreover, a considerable lag phase of iopromide deiodination was observed in sulfate anolyte, indicating that initial oxidation reactions took place almost exclusively at the alkyl side chains. Several transformation products (TPs) of ICM were identified in electrooxidation in sulfate anolyte, and only three TPs in the case of nitrate anolyte. The main mechanistic steps in the oxidation of iopromide were H-abstraction and bond cleavage in the alkyl side chains. Diatrizoate was mainly transformed through oxidative cleavage of iodine substituent and inter-molecular cyclization. Two hydroxylamine derivatives of iopromide and a nitro-derivative of diatrizoate were observed in sulfate anolyte. These products have not been reported previously for hydroxyl radical-mediated oxidation of ICM. Given that electron-transfer mechanism is more typical for sulfate than for hydroxyl radicals, formation of hydroxylamine and nitro-derivatives of ICM was assigned to one

  6. Degradation of perfluorinated compounds on a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Highlights: ► The first order kinetic constants of PFCs depend on chain length. ► BDD has good electrochemical performances and high current efficiency at 0.59 mA cm−2. ► The intermediate products of PFCs decomposition were short chain PFCAs. - Abstract: Perfluorinated compounds (PFCs) are persistent in environments due to the high energy of C-F bond. Electrochemical oxidation of seven PFCs in aqueous solution on a boron doped diamond (BDD) anode was studied in this study. The kinetics results show that the pseudo-first order kinetic constants of perfluoroalkyl carboxyates and sulfonates increased with the increase of carbon chain length. PFCs decomposition began with a direct one electron transfer from carboxyl or sulfonate group to BDD, and the formed PFCs radicals were decarboxylated or desulfonated to yield the perfluoroalkyl radical which permitted a defluorination reaction between perfluoroalkyl radical and hydroxyl radical. The effects of potential, current density, initial pH, and perfluorooctanoate (PFOA) concentration on the removal of PFOA were investigated. The anodic potential played an important role in the decomposition, and the oxidation potential of PFOA was 2.76 vs. SCE/V (saturated calomel electrode). When the current density increased slightly from 0.12 to 0.59 mA cm−2, PFOA removal was greatly enhanced from 0 to 97.48%. PFOA decomposition was higher in acidic solution compared to that in the alkaline solution. The pseudo-first order kinetic constants of PFOA decomposition increased with the increase of initial concentration.

  7. Toward a Boron-Doped Ultrananocrystalline Diamond Electrode-Based Dielectrophoretic Preconcentrator.

    Science.gov (United States)

    Zhang, Wenli; Radadia, Adarsh D

    2016-03-01

    This paper presents results on immunobeads-based isolation of rare bacteria and their capture at a boron-doped ultrananocrystalline diamond (BD-UNCD) electrode in a microfluidic dielectrophoretic preconcentrator. We systematically vary the bead surface chemistry and the BD-UNCD surface chemistry and apply dielectrophoresis to improve the specific and the nonspecific capture of bacteria or beads. Immunobeads were synthesized by conjugating antibodies to epoxy-/sulfate, aldehyde-/sulfate, or carboxylate-modified beads with or without poly(ethylene glycol) (PEG) coimmobilization. The carboxylate-modified beads with PEG provided the highest capture efficiency (∼65%) and selectivity (∼95%) in isolating live Escherichia coli O157:H7 from cultures containing 1000 E. coli O157:H7 colony-forming units (cfu)/mL, or ∼500 E. coli O157:H7 and ∼500 E. coli K12 cfu/mL. Higher specificity was achieved with the addition of PEG to the antibody-functionalized bead surface, highest with epoxy-/sulfate beads (85-86%), followed by carboxylate-modified beads (76-78%) and aldehyde-/sulfate beads (74-76%). The bare BD-UNCD electrodes of the preconcentrator successfully withstood 240 kV/m for 100 min that was required for the microfluidic dielectrophoresis of 1 mL of sample. As expected, the application of dielectrophoresis increased the specific and the nonspecific capture of immunobeads at the BD-UNCD electrodes; however, the capture specificity remained unaltered. The addition of PEG to the antibody-functionalized BD-UNCD surface had little effect on the specificity in immunobeads capture. These results warrant the fabrication of electrical biosensors with BD-UNCD so that dielectrophoretic preconcentration can be performed directly at the biosensing electrodes. PMID:26829879

  8. Mechanistic studies on boron-doped diamond: Oxidation of small organic molecules

    International Nuclear Information System (INIS)

    The electro-oxidation of ethanol, acetone, i-propanol, its fluorinated analogue hexafluoroisopropanol (HFiP) and cyclohexane in 1 M HClO4 was studied on a boron doped diamond (BDD) electrode by on-line differential electrochemical mass spectrometry (DEMS), using a dual thin layer cell. One can distinguish two oxidation pathways: at potentials below 2.5 V a direct electron transfer to the BDD takes place, while at potentials above 2.5 V OH radicals are produced and scavenged by the reactants. As a consequence, the oxygen evolution reaction is at least partially suppressed. The direct electron transfer to the electrode is observed for i-propanol, ethanol and cyclohexane. For acetone and HFiP, only the second, indirect, pathway with the participation of OH radicals is effective. For all the reactants except HFiP CO2 formation was observed generally at 2.5 V or higher, the potential for the oxygen evolution reaction (OER) in the pure supporting electrolyte. Hence OH radicals are instrumental in the cleavage of C-C bonds. For HFiP, the cyclic voltammograms of the supporting electrolyte with and without the reactant are identical. This indicates that the oxidation of HFiP is initiated by OH radicals followed by a further electron transfer to the electrode, similarly to the oxidation of CO (I. Kisacik, A. Stefanova, S. Ernst and H. Baltruschat, PCCP, 15 (2013) 4616). For both pathways, the reactivity follows the same trend as the homogeneous hydrogen abstraction reaction rates with OH radicals. The intermediate radicals formed in the reaction with the electro-generated OH radicals can react with oxygen present in the solution

  9. Decomposition of various endocrine-disrupting chemicals at boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Yoshihara, S. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)], E-mail: sachioy@cc.utsunomiya-u.ac.jp; Murugananthan, M. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2009-02-28

    Anodic decomposition of endocrine disrupting chemicals (EDCs) namely, 17{beta}-estradiol (E2) and Bisphenol A (BPA) at boron-doped diamond (BDD) has been studied with a working solution volume of 250 ml under galvanostatic mode. Cyclic voltammetric experiments were performed to examine the redox response of E2 and BPA as a function of cycle number. Kinetic analysis suggests that electro-oxidation reaction of EDCs undergo the control of applied current density (I{sub appl}). The mineralization behavior of EDCs was investigated at BDD anode monitoring the total organic carbon (TOC) value at three different I{sub appl}. Electrolysis at high anodic potential causes complex oxidation of EDCs that lead to form the final sole product as CO{sub 2}. From these TOC results, the mineralization current efficiency was evaluated and discussed. In order to examine the effect of electrolyte variables on EDCs, BPA compound was taken and undergone the supporting medium and pH variation experiments. Considering global oxidation process, the effect of supporting medium (Na{sub 2}SO{sub 4}, NaNO{sub 3}, and NaCl) has been discussed in terms of electro-generated inorganic oxidants such as S{sub 2}O{sub 8}{sup 2-}, H{sub 2}O{sub 2} and ClO{sup -}. The better performance of BDD anode was proved on a comparative study with Pt and glassy carbon under similar experimental conditions. A possible reaction mechanism for BPA degradation involving three main aromatic intermediates, identified by GC-MS analysis, was proposed.

  10. Semiconducting to metallic-like boron doping of nanocrystalline diamond films and its effect on osteoblastic cells

    Czech Academy of Sciences Publication Activity Database

    Kromka, Alexander; Grausová, Ľubica; Bačáková, Lucie; Vacík, Jiří; Rezek, Bohuslav; Vaněček, Milan; Williams, O.A.; Haenen, K.

    2010-01-01

    Roč. 19, 2-3 (2010), s. 190-195. ISSN 0925-9635 R&D Projects: GA AV ČR KAN400100701; GA AV ČR(CZ) KAN400480701; GA MŠk LC510; GA AV ČR(CZ) IAAX00100902 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z50110509; CEZ:AV0Z10480505 Keywords : nanocrystalline diamond * boron doping * atomic force microscopy * tissue engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.825, year: 2010

  11. Explaining Morphological and Electrical Features of Boron-doped Zinc Oxide to Tailor New Electrodes for Photovoltaics

    OpenAIRE

    Fanni, Lorenzo

    2016-01-01

    TCOs are a class of metal oxides that combine transparency to visible light with electrical conductivity. Each TCO is characterized by the trade-off of these two properties which can be tuned for a particular application. This thesis is dedicated to the investigation of one TCO material: boron doped zinc oxide (ZnO:B) deposited by low-pressure chemical vapor deposition (LP-MOCVD). Its main distinction is low absorptance which makes ZnO films deposited by LP-MOCVD ideal as transparent electro...

  12. Monitoring of peptide induced disruption of artificial lipid membrane constructed on boron-doped nanocrystalline diamond by electrochemical impedance spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Petrák, V.; Grieten, L.; Taylor, Andrew; Fendrych, František; Ledvina, Miroslav; Janssens, S. D.; Nesládek, M.; Haenen, K.; Wagner, P.

    2011-01-01

    Roč. 208, č. 9 (2011), s. 2099-2103. ISSN 1862-6300 R&D Projects: GA AV ČR KAN200100801; GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LD11076 Grant ostatní: European RD projects(XE) 238201-MATCON Institutional research plan: CEZ:AV0Z40550506; CEZ:AV0Z10100520 Keywords : biosensor * boron-doped nanocrystalline diamond * electrochemical impedance spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.463, year: 2011

  13. Synthesis and characterization of carbon or/and boron-doped CdS nanoparticles and investigation of optical and photoluminescence properties

    International Nuclear Information System (INIS)

    Un-doped and carbon or/and boron doped Cadmium sulfide nanoparticles were prepared via chemical co-precipitation procedure by Polyvinyl pyrrolidone (PVP) as a stabilizer. The optical and structural properties were investigated using several techniques. The morphology of CdS nanophotocatalyst was characterized using X-ray diffraction (XRD) and scanning electron microscopy. The optical properties of both un-doped and doped samples were carried out by photoluminescence (PL) spectroscopy and UV–vis Diffuse reflectance spectra (DRS). An optimum doping level of the atoms dopant for enhanced PL properties are found through optical study. Degradation of Amoxicillin under UV light elucidation was applied to appraise the photocatalytic efficiency. The results show that the carbon and boron doping CdS nanoparticles has high potential in green chemistry. - Highlights: • Un-doped, C or/and B-doped CdS nanoparticles were successfully synthesized. • The Blue shift was observed in UV–vis absorption spectra for the doped nanoparticles. • Doping of CdS with C and B enhances the fluorescence

  14. Synthesis and characterization of carbon or/and boron-doped CdS nanoparticles and investigation of optical and photoluminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Fakhri, Ali, E-mail: ali.fakhri88@yahoo.com [Department of Chemistry, Shahr-e-Qods Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Young Researchers and Elite Club, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Khakpour, Reza [Department of Physics, Tehran North Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-04-15

    Un-doped and carbon or/and boron doped Cadmium sulfide nanoparticles were prepared via chemical co-precipitation procedure by Polyvinyl pyrrolidone (PVP) as a stabilizer. The optical and structural properties were investigated using several techniques. The morphology of CdS nanophotocatalyst was characterized using X-ray diffraction (XRD) and scanning electron microscopy. The optical properties of both un-doped and doped samples were carried out by photoluminescence (PL) spectroscopy and UV–vis Diffuse reflectance spectra (DRS). An optimum doping level of the atoms dopant for enhanced PL properties are found through optical study. Degradation of Amoxicillin under UV light elucidation was applied to appraise the photocatalytic efficiency. The results show that the carbon and boron doping CdS nanoparticles has high potential in green chemistry. - Highlights: • Un-doped, C or/and B-doped CdS nanoparticles were successfully synthesized. • The Blue shift was observed in UV–vis absorption spectra for the doped nanoparticles. • Doping of CdS with C and B enhances the fluorescence.

  15. EFFECT OF POLISHING ON THE FRICTION BEHAVIORS AND CUTTING PERFORMANCE OF BORON-DOPED DIAMOND FILMS ON WC-Co INSERTS

    OpenAIRE

    LIANG WANG; BIN SHEN; FANGHONG SUN; ZHIMING ZHANG

    2014-01-01

    Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman spectroscopy, 3D surface topography based on white-light interferometry and Rockwell hardness tester. The effects of mechanical polishing on the friction behavior and cutting performance of B-doped diamond are eva...

  16. Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon

    Science.gov (United States)

    Zhu, Shuze; Li, Teng

    2016-03-01

    The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks active control of the resulting electronic properties. Here we reveal that a boron nitride nanoribbon with a carbon-doped edge can be made a half-metal or a spin-gapless semiconductor in a programmable fashion. The mechanical strain serves as the on/off switches for functions of half-metal and spin-gapless semiconductor to occur. Our findings shed light on how the edge doping combined with strain engineering can affect electronic properties of two-dimensional materials.

  17. Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

    Energy Technology Data Exchange (ETDEWEB)

    Tetelbaum, D.I.; Mikhaylov, A.N.; Belov, A.I.; Korolev, D.S.; Shushunov, A.N.; Bobrov, A.I.; Pavlov, D.A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Shek, E.I.; Sobolev, N.A. [Ioffe Physical Technical Institute, St. Petersburg (Russian Federation)

    2015-01-01

    The depth distribution of light-emitting centers of the D1 dislocation-related photoluminescence line (∝ 1.5 μm) in silicon implanted with Si{sup +} ions and annealed at 1100 C in the oxidizing chlorine-containing atmosphere has been investigated by means of the layer-by-layer chemical etching. It is established with the application of cross-sectional transmission electron microscopy that the main contribution to the D1 line is made by the centers located at the depths of up to ∝ 150 nm, i.e. in the region of Si{sup +} ion ranges, whereas the dislocations produced by Si{sup +} implantation and annealing at 1100 C penetrate to the depth of ∝ 1000 nm. Additional boron ion doping with subsequent annealing at 800 C in N{sub 2} atmosphere improves the emission in comparison with the undoped but annealed reference sample, however the additional annealing at 800 C per se results in the photoluminescence weakening. The dependence of the D1 line intensity on boron ion dose is found to be nonmonotonous. The interpretation of the obtained results is given in relation to the key role of selfinterstitials and boron impurity in the formation of radiative and nonradiative centers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Electrochemical Detection of Clenbuterol in Pig Liver at Pyrrole-DNA Modified Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    WU Jing; LI Xiao-li; WU Xu-mei; HUAN Shuang-yan; SHEN Guo-li; YU Ru-qin

    2005-01-01

    The direct detection of clenbuterol(CL) in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond(BDD) electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340.2, 299.8 and 166.6 mV(versus SCE), respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic voltammetric response for CL was obtained in a linear range from 3.4×10-6 to 5×10-4 mol/L with a detection limit of 8.5×10-7 mol/L. A mean recovery of 102.7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.

  19. Assessment of Electrodes Prepared from Wafers of Boron-doped Diamond for the Electrochemical Oxidation of Waste Lubricants

    International Nuclear Information System (INIS)

    Electrochemical oxidation using boron-doped diamond electrodes is being investigated as a treatment process for radioactively contaminated oily wastes. Previously, it was shown that electrodes coated with a thin film of diamond were able to oxidise a cutting oil but not a mineral oil. These tests were inconclusive, because the electrodes lost their diamond coating during operation. Accordingly, an electrode prepared from a 'solid' wafer of boron-doped diamond is being investigated to determine whether it will oxidise mineral oils. The electrode has been tested with sucrose, a cutting oil and an emulsified mineral oil. Before and after each test, the state of the electrode was assessed by cyclic voltammetry with the ferro/ferricyanide redox couple. Analysis of the cyclic voltammogram suggested that material accumulated on the surface of the electrode during the tests. The magnitude of the effect was in the order: - emulsified mineral oil > cutting oil > sucrose. Despite this, the results indicated that the electrode was capable of oxidising the emulsified mineral oil. Confirmatory tests were undertaken in the presence of alkali to trap the carbon dioxide, but they had to be abandoned when the adhesive holding the diamond in the electrode was attacked by the alkali. Etching of the diamond wafer was also observed at the end of the tests. Surface corrosion is now regarded as an intrinsic part of the electrochemical oxidation on diamond, and it is expected that the rate of attack will determine the service life of the electrodes. (authors)

  20. High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil

    Science.gov (United States)

    Montgomery, J. M.; Samudrala, G. K.; Velisavljevic, N.; Vohra, Y. K.

    2016-04-01

    A boron-doped designer heater anvil is used in conjunction with powder x-ray diffraction to collect structural information on a sample of quasi-hydrostatically loaded gadolinium metal up to pressures above 8 GPa and 600 K. The heater anvil consists of a natural diamond anvil that has been surface modified with a homoepitaxially grown chemical-vapor-deposited layer of conducting boron-doped diamond, and is used as a DC heating element. Internally insulating both diamond anvils with sapphire support seats allows for heating and cooling of the high-pressure area on the order of a few tens of seconds. This device is then used to scan the phase diagram of the sample by oscillating the temperature while continuously increasing the externally applied pressure and collecting in situ time-resolved powder diffraction images. In the pressure-temperature range covered in this experiment, the gadolinium sample is observed in its hcp, αSm, and dhcp phases. Under this temperature cycling, the hcp → αSm transition proceeds in discontinuous steps at points along the expected phase boundary. From these measurements (representing only one hour of synchrotron x-ray collection time), a single-experiment equation of state and phase diagram of each phase of gadolinium is presented for the range of 0-10 GPa and 300-650 K.

  1. Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

    Directory of Open Access Journals (Sweden)

    Bogdanowicz Robert

    2014-12-01

    Full Text Available Abstract A conductive boron-doped diamond (BDD grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD. The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

  2. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  3. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  4. Heat treatment induced structural modification of boron-doped ZnO layers

    International Nuclear Information System (INIS)

    Complete text of publication follows. In the case of solar cells, to optimize the properties of photovoltaic (PV) modules one of the important issues is the diffusion of sodium from the glass substrate into the layered structure. There are many discussions about the role of the Na during preparation of PV modules: i) selenisation of Mo interlayer between the ZnO and active layers to obtain a lower series electrical resistance without changing the transmittance of the ZnO layer; ii) the diffusion of Na from glass substrate to a-Si:H/c- Si or Cu(In,Ga)Se2 (CIGS) layer. In certain cases the ZnO layers must be annealed in air or in hydrogen atmosphere to improve electrical conductivity. At the same time, the annealing temperature induces diffusion of Na. Thus, detailed investigation of appropriate layered materials is required. Present work was initiated in the framework of developing the solar cell technology. The goal was to investigate suitable substrates appropriate for desirable Na diffusion. Borondoped ZnO layers were prepared by Low Pressure Chemical Vapour Deposition (LPCVD) method on three different types of substrate: soda-lime windows glass (s1) and Schott AF-45 alkali-free thin glass (s2) were selected for our experiments. Polished Si substrate (s3) was used as a reference sample. After sample preparation procedure, the samples were annealed in air at 300 deg C. As it can seen in Fig.1, significant structural changes occurred at the surface of boron-doped ZnO layers in the form of bubble formation. We experienced that Na diffusion directly connected with hydrogen precipitation. Formation of bubbles observed was most probably due to enhanced hydrogen accumulation from the ZnO:B structure or decomposition of physisorbed precursor. After the annealing, the bubbles on the sample surface were blown up and cracked, i.e. were destroyed on polished Si and Soda-lime glass substrates. However, the samples prepared on AF 45 Schott alkali-free thin glass substrate had

  5. Boron-doped diamond microelectrodes for use in capillary electrophoresis with electrochemical detection.

    Science.gov (United States)

    Cvacka, Josef; Quaiserová, Veronika; Park, JinWoo; Show, Yoshiyuki; Muck, Alexander; Swain, Greg M

    2003-06-01

    The fabrication and characterization of boron-doped diamond microelectrodes for use in electrochemical detection coupled with capillary electrophoresis (CE-EC) is discussed. The microelectrodes were prepared by coating thin films of polycrystalline diamond on electrochemically sharpened platinum wires (76-, 25-, and 10-microm diameter), using microwave-assisted chemical vapor deposition (CVD). The diamond-coated wires were attached to copper wires (current collectors), and several methods were explored to insulate the cylindrical portion of the electrode: nail polish, epoxy, polyimide, and polypropylene coatings. The microelectrodes were characterized by scanning electron microscopy, Raman spectroscopy, and cyclic voltammetry. They exhibited low and stable background currents and sigmoidally shaped voltammetric curves for Ru(NH3)6(3+/2+) and Fe(CN)6(3-/4-) at low scan rates. The microelectrodes formed with the large diameter Pt and sealed in polypropylene pipet tips were employed for end-column detection in CE. Evaluation of the CE-EC system and the electrode performance were accomplished using a 10 mM phosphate buffer, pH 6.0, run buffer, and a 30-cm-long fused-silica capillary (75-microm i.d.) with dopamine, catechol, and ascorbic acid serving as test analytes. The background current (approximately 100 pA) and noise (approximately 3 pA) were measured at different detection potentials and found to be very stable with time. Reproducible separation (elution time) and detection (peak current or area) of dopamine, catechol, and ascorbic acid were observed with response precisions of 4.1% or less. Calibration curves constructed from the peak area were linear over 4 orders of magnitude, up to a concentration between 0.1 and 1 mM. Mass limits of detection for dopamine and catechol were 1.7 and 2.6 fmol, respectively (S/N = 3). The separation efficiency was approximately 33,000, 56,000, and 98,000 plates/m for dopamine, catechol, and ascorbic acid, respectively. In

  6. Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties

    Czech Academy of Sciences Publication Activity Database

    Poh, H. L.; Šimek, P.; Sofer, Z.; Tomandl, Ivo; Pumera, M.

    2013-01-01

    Roč. 1, č. 42 (2013), s. 13146-13153. ISSN 2050-7488 R&D Projects: GA MŠk(XE) LM2011019 Institutional support: RVO:61389005 Keywords : Boron and nitrogen doping * Prompt gamma-ray activation analysis * Graphene lattices Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  7. First-principles study of metallic carbon nanotubes with boron/nitrogen co-doping

    Institute of Scientific and Technical Information of China (English)

    Chen Ling-Na; Ma Song-Shan; OuYang Fang-Ping; Xiao Jin; Xu Hui

    2011-01-01

    Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes (MCNTs) with B/N pair co-doping. The results about formation energy show that the B/N pair co-doping configuration is a most stable structure. We find that the electronic structure and the transport properties are very sensitive to the doping concentration of the B/N pairs in MCNTs, where the energy gaps increase with doping concentration increasing both along the tube axis and around the tube, because the mirror symmetry of MCNT is broken by doping B/N pairs. In addition, we discuss conductance dips of the transmission spectrum of doped MCNTs. These unconventional doping effects could be used to design novel nanoelectronic devices.

  8. Plasma-assisted Recoil Implantation for Shallow Boron Doping in Silicon

    Science.gov (United States)

    Liu, H. L.; Gearhart, S. S.; Booske, J. H.; Wang, W.

    1997-10-01

    An ion beam mixing technique is used to fabricate ultra-shallow p+/n junctions for the application of sub-micron CMOS source/drain formation. In this method, a thin boron layer is first sputtered onto the Si wafer. Then -3kV argon Plasma Source Ion Implantation (PSII) drives the boron atoms into the Si substrate by means of ion beam mixing. This process avoids the hazardous toxic gases, undesirable F co-implantation and F etching effects. Sub-100nm deep p+/n junctions have been formed with this method. Numerical simulations were performed to predict the recoiled boron profiles, which are in agreement with the experimental data. The boron sputter deposition process has been optimized. Auger electron spectroscopy (AES) confirms high purity of the deposited boron films. Numerical Simulations show that the B films with thickness ranging from 5nm to 10nm result in very similar recoiled B profiles. The thickness of 7.5nm is chosen for the deposited B layer to make the entire process more reproducible. Moreover, a part of the implantation damage will be contained in the B layer, which will be removed prior to the annealing step. This should help to alleviate the transient enhanced B diffusion. The research for the recoil implantation of 7.5nm thick B layer is currently underway.

  9. CR-39 personnel neutron dosimeters: Enhanced sensitivity via boron-doping

    International Nuclear Information System (INIS)

    An improved CR-39 neutron dosimeter has been designed and tested. This dosimeter has a thin (roughly 20 μm) boron-containing layer between the poly(ethylene-co-vinyl acetate) radiator and the CR-39 substrate, which increases its sensitivity to low energy (50 keV) neutrons by an order of magnitude and to thermal neutrons by nearly two orders of magnitude. This layer consists of sodium borate dispersed in a poly(vinyl alcohol) matrix. The response of the improved dosimeter was measured with monoenergetic neutron beams from thermal energies to 15 MeV, and boron contents from zero to 52 μg cm-2 (saturated solution). Maximum sensitivity occurs at a boron content of about 35 μg cm-2, but a significant improvement in sensitivity was observed for even a boron content of 11μg cm-2. By incorporating just a small amount of boron (less than 1 μg cm-2), it is possible that a dosimeter with a nearly flat response over the neutron energies tested could be achieved

  10. Growth of boric acid crystallites on the surface of boron-doped silicon carbide samples

    International Nuclear Information System (INIS)

    White crystallites were visually observed on fractured or polished surfaces of SiC samples (grain sizes below ∼500 nm) during exposure to air at room temperature for several days. Characterization of the crystallites by scanning electron microscopy, secondary ion mass spectroscopy, and X-ray diffraction identified B(OH)3 crystals with a strong (002) texture. The rate of boric acid formation was determined by a gravimetric experiment. The rate of weight gain increased significantly after an incubation period of 1 week. Nucleation is initially the rate-limiting process. Subsequently small B(OH)3 crystals form on the surface, whose growth rate is determined by grain boundary diffusion of boron to the SiC surface. An estimated grain boundary boron to the SiC surface. An estimated grain boundary diffusion coefficient of boron in SiC was many orders of magnitude higher than extrapolated literature values

  11. Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

    Institute of Scientific and Technical Information of China (English)

    Ouyang Fang-Ping; Peng Sheng-Lin; Chen Ling-Na; Sun Shu-Yuan; Xu Hui

    2011-01-01

    By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I-V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.

  12. Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

    OpenAIRE

    Velasco Jr., Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F.

    2016-01-01

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible ...

  13. Influence of C-doping on the B-11 and N-14 quadrupole coupling constants in boron-nitride nanotubes. A DFT study

    International Nuclear Information System (INIS)

    A computational study at the level of density functional theory (DFT) was carried out to investigate the influence of carbon doping (C-doping) on the 11B and 14N quadrupole coupling constants (CQ) in the (6,0) single-walled boron-nitride nanotube (BNNT). To this aim, a 10 Aa length of BNNT consisting of 24 B atoms and 24 N atoms was selected where the end atoms are capped by hydrogen atoms. To follow the purpose, six C atoms were doped instead of three B and three N atoms as a central ring in the surface of the C-doped BNNT. The calculated CQ values for both optimized BNNT systems, raw and C-doped, reveal different electrostatic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered BNNT systems. (orig.)

  14. Electronic structure and optical property of 3d transition metal doped (5,5) boron nitride nanotube

    International Nuclear Information System (INIS)

    The electronic structure and magnetic and optical properties of a 3d transition metal M (M = V, Cr, Mn, Fe) doped (5,5) boron nitride (B19MN20) nanotube are investigated by using the first-principles projector augmented wave potential within density functional theory under the generalized gradient approximation. It is found that B19VN20 and B19MnN20 systems are ideal candidates for spintronic applications, and the B19CrN20 system seems to be a promising diluted magnetic semiconductor. The analyses of optical dielectric functions show that B19CrN20 exhibits a new main peak at about 0.3 eV, and thus may be utilized in fields that are associated with infrared technology, such as infrared detectors, infrared masers, and so on. (orig.)

  15. Development of Sensitive Analytical Approach for the Quantification of α-Lipoic Acid Using Boron Doped Diamond Electrode.

    Science.gov (United States)

    Stankovic, Dalibor M; Mehmeti, Eda; Kalcher, Kurt

    2016-01-01

    A boron doped diamond (BDD) electrode was investigated for use as an electrochemical sensor for α-lipoic acid (LA) using amperometric and differential pulse voltammetric detection. LA displays a well expressed oxidation peak at +0.9 V vs. Ag/AgCl in solutions with a pH value of 3. It was found that signals obtained are linearly related to the concentration range from 0.3 to 105 μM with detection limit of 0.088 μM. Interferences by common compounds such as ascorbic acid, uric acid and dopamine were tested and the method was successfully applied to the determination of LA in human body fluids where it gave recoveries in the range from 95 to 97%. PMID:27506710

  16. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    International Nuclear Information System (INIS)

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L-1 KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 μmol L-1 in a BR buffer solution (pH 2.0), with a detection limit of 0.90 μmol L-1. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  17. Sensitive voltammetric method for rapid determination of pyridine herbicide triclopyr on bare boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Voltammetric method for the determination of a pyridine herbicide triclopyr (3,5,6-trichloro-2-pyridyloxyacetic acid) is presented for the first time using bare boron-doped diamond electrode. Triclopyr provides one well-developed, pH-independent oxidation signal at ca. +1.9 V (vs. Ag∣AgCl∣KCl (sat.)) contrary to structurally related clopyralid, which is not oxidizable at the working electrode. Britton–Robinson buffer (pH 2.0) was chosen as optimal electrolyte for determination of triclopyr using square wave and differential pulse voltammetry. The latter method provided slightly better detection limit of 0.82 μmol L−1 and linearity in the concentration range 1.0–108.8 μmol L−1. Applicability of the proposed method was verified by analysis of pesticide preparation, spiked water and urine with excellent results

  18. Electrocatalytic and photocatalytic activity of Pt-TiO2 films on boron-doped diamond substrate

    Science.gov (United States)

    Spătaru, Tanţa; Marcu, Maria; Spătaru, Nicolae

    2013-03-01

    In the present work boron-doped diamond (BDD) polycrystalline films were used as support for direct anodic deposition of hydrous titanium oxide, and continuous TiO2 coatings were obtained by appropriately adjusting the deposition charge. The photoelectrochemical activity of the TiO2/BDD electrodes was investigated and it was found that, in terms of charge carriers separation efficiency, conductive diamond is a much better support for TiO2, compared to traditional carbonaceous materials such as glassy carbon. Further electrochemical deposition of platinum particles on the oxide-coated conductive diamond enabled the formation of a composite with enhanced electrochemically active surface area. The electrocatalytic and photocatalytic properties of the Pt/TiO2/BDD electrodes thus obtained were also scrutinized and it appeared that these hybrid systems also exhibit promising features for methanol anodic oxidation.

  19. Cathodic and anodic pre-treated boron doped diamond with different sp2 content: Morphological, structural, and impedance spectroscopy characterizations

    Science.gov (United States)

    Baldan, M. R.; Azevedo, A. F.; Couto, A. B.; Ferreira, N. G.

    2013-12-01

    In this work, the influence of cathodic (Red) and anodic (Ox) pre-treatment on boron doped diamond (BDD) films grown with different sp2/sp3 ratios was systematically studied. The sp2/sp3 ratios were controlled by the addition of CH4 of 1,3,5 and 7 sccm in the gas inlet during the growth process. The electrodes were treated in 0.5 mol L-1 H2SO4 at -3 and 3 V vs Ag/AgCl, respectively, for 30 min. The electrochemical response of BDD films was investigated using electrochemical impedance spectroscopy (EIS) and Mott-Schottky Plot (MSP) measurements. Four film sample sets were produced in a hot filament chemical vapor deposition reactor. During the growth process, an additional H2 line passing through a bubbler containing the B2O3 dissolved in methanol was used to carry the boron. The scanning electron microscopy morphology showed well faced films with a small decrease in their grain size as the CH4 concentration increased. The Raman spectra depicted a pronounced sp2 band, mainly for films with 5 and 7 sccm of CH4. MSP showed a decrease in the acceptor concentration as the CH4 increased indicating the CH4 influence on the doping process for Red-BDD and Ox-BDD samples. Nonetheless, an apparent increase in the acceptor concentrations for both Ox-BDD samples was observed compared to that for Red-BDD samples, mainly attributed to the surface conductive layer (SCL) formation after this strong oxidation process. The EIS Nyquist plots for Red-BDD showed a capacitance increase for the films with higher sp2 content (5 and 7 sccm). On the other hand, the Nyquist plots for Ox-BDD can be described as semicircles near the origin, at high frequencies, where their charge transfer resistance strongly varied with the sp2 increase in such films.

  20. Effect of reaction conditions on methyl red degradation mediated by boron and nitrogen doped TiO2

    Science.gov (United States)

    Galenda, A.; Crociani, L.; Habra, N. El; Favaro, M.; Natile, M. M.; Rossetto, G.

    2014-09-01

    Nowadays the employment of renewable and sustainable energy sources, and solar light as main option, becomes an urgent need. Photocatalytic processes received great attention in wastewater treatment due to their cheapness, environmental compatibility and optimal performances. Despite the general low selectivity of the photocatalysts, an accurate optimisation of the operational parameters needs to be carried out in order to maximise the process yield. Because of this reason, the present contribution aims to deepen either the knowledge in boron and/or nitrogen doped TiO2-based systems and their employment in methyl red removal from aqueous solutions. The samples were obtained by coprecipitation and characterised by XRD, SEM, BET specific surface area, UV-vis and XPS techniques. The catalytic activity was for the first time carefully evaluated with respect to methyl red photodegradation in different conditions as a function of working pH, counter-ions and pre-adsorption time. An ad-hoc study was performed on the importance of the pre-adsorption of the dye, suggesting that an extended adsorption is useless for the catalyst photoactivity, while a partial coverage is preferable. The photocatalytic tests demonstrate the positive influence of boron doping in photo-activated reactions and the great importance of the operational parameters with respect to the simple methyl red bleaching rather than the overall pollutant mineralisation. It is proved, indeed, that different working pH, acidifying means and substrate pre-adsorption time can enhance or limit the catalyst performances with respect to the complete pollutant degradation rather than its partial breakage.

  1. The acceptor concentration of the polycrystalline boron doped diamond films determined using different techniques

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Nesladek, M.; Kavan, Ladislav

    Hasselt: Hasselt University, 2015. s. 92-92. [Hasselt Diamond Workshop 2015, SBDD XX. 25.02.2015-27.02.2015, Hasselt] R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : polycrystalline boron * electrochemistry Subject RIV: CG - Electrochemistry

  2. Effect of boron dimers on the superconducting critical temperature inboron-doped diamond

    Czech Academy of Sciences Publication Activity Database

    Šopík, Břetislav; Lipavský, P.

    2012-01-01

    Roč. 21, č. 1 (2012), 77-82. ISSN 0925-9635 R&D Projects: GA ČR GAP204/10/0212 Institutional research plan: CEZ:AV0Z10100521 Keywords : boron * superconductivity * disorder * correlations * dimers Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.709, year: 2012

  3. Control of Rewriteable Doping Patterns in Graphene/Boron Nitride Heterostructures

    Science.gov (United States)

    Kahn, Salman; Velasco, Jairo, Jr.; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Ju, Long; Jiang, Lili; Shi, Zhiwen; Ashby, Paul; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    Spatial control of charge doping in 2D materials is a promising technique for designing future electronic devices and understanding novel physics. Electrostatic gating and chemical doping are common methods to achieve control of charge doping in 2D materials. However, these approaches suffer from complicated fabrication processes that introduce impurities, change material properties irreversibly, and lack flexibility. Here, we introduce a new method for patterning rewriteable doping profiles with local interface charge transfer from defects in a tunable BN substrate into an adjacent layer of graphene. We characterize these spatial doping patterns through local probe and transport techniques. This technique enables many novel device designs for 2D materials, including atomically thin p-n junctions and rewriteable memory devices.

  4. Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Precipitation free boron (B)-doped as-grown p+-BaSi2 layer is essential for the BaSi2 p-n junction solar cells. In this article, B-doped p-BaSi2 layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (TS) and B temperature (TB) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 1019 cm−3 at room temperature for TS = 600 and TB = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the TS was raised to 650 °C and the TB was decreased to 1350 °C, the p reached 6.8 × 1019 cm−3, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.

  5. Boron-Doped Graphene As Active Electrocatalyst For Oxygen Reduction Reaction At A Fuel-Cell Cathode

    CERN Document Server

    Fazio, Gianluca; Di Valentin, Cristiana

    2016-01-01

    Boron-doped graphene was reported to be the best non-metal doped graphene electrocatalyst for the oxygen reduction reaction (ORR) working at an onset potential of 0.035 V [JACS 136 (2014) 4394]. In the present DFT study, intermediates and transition structures along the possible reaction pathways are determined. Both Langmuir-Hinschelwood and Eley-Rideal mechanisms are discussed. Molecular oxygen binds the positively charged B atom and forms an open shell end-on dioxygen intermediate. The associative path is favoured with respect to the dissociative one. The free energy diagrams along the four-reduction steps are investigated with the methodology by N{\\o}rskov and co. [JPC B 108 (2004) 17886] in both acidic and alkaline conditions. The pH effect on the stability of the intermediates of reduction is analyzed in terms of the Pourbaix diagram. At pH = 14 we compute an onset potential value for the electrochemical ORR of U = 0.05 V, which compares very well with the experimental value in alkaline conditions.

  6. Highly sensitive pressure sensor based on long-period gratings written in a boron co-doped optical fiber

    International Nuclear Information System (INIS)

    The paper presents a novel pressure sensor based on long-period gratings (LPGs) written with an arc-induced method in a boron co-doped photosensitive fiber. The achieved pressure sensitivity for these gratings is at least four to eight times higher than for gratings written in other fibers which have been presented to date. The sensitivity is strongly dependent on the investigated order of modes, and for the 7th cladding mode can reach δλ/δp = 78 pm bar−1. It was found that the incorporation of B2O3 in the core of the fiber is responsible for the higher pressure sensitivity of these LPGs. This conclusion is based on consideration of variations in the elastic properties of the glass versus its composition. According to our simulations, the pressure-optic coefficient of the B/Ge-doped core of the fiber is 2.03 RIU bar−1. The sensitivity of the structure to temperature and to external refractive index is discussed from the point of view of the possible indirect influence of these conditions on the pressure response. It is proven that the experiment was conducted in such a way that the measured pressure sensitivity was not significantly affected by variations in either the temperature or the external refractive index

  7. Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electrons

    Science.gov (United States)

    Lin, Wallace Wan-Li; Sah, Chih-Tang

    1988-08-01

    Hydrogenation kinetics of boron acceptors in oxidized silicon during and after repeated 8-keV electron irradiation (225-2700-μC/cm2 stresses and 10-168-h interirradiation anneals) at room temperature are reported. Hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8-keV electron beam is removed. Postoxidation process dependencies show that postoxidation and postmetallization annealing processes reduce the hydrogenation effect during the 8-keV electron irradiation, while exposure of the oxide to water prior to aluminum electrode deposition enhances it. The data can be interpreted by our two-reaction model consisting of the hydrogen capture reaction by the boron acceptor and the hydrogen recombination reaction to form hydrogen molecule.

  8. Effects of heat-treatments on electrical properties of boron-doped silicon crystals

    OpenAIRE

    Kamiura, Y.; Hashimoto, F.; Yoneta, M.

    1990-01-01

    The effects of heat-treatments around 1000°Cand subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I-IV, of heat-treatment-induced donors were observed on isochronal annealing up to 400°C Conductivity changes in these stages can be explainedas described below ...

  9. Biocompatibility of nanostructured boron doped diamond for the attachment and proliferation of human neural stem cells

    OpenAIRE

    Taylor, A C; Vagaska, B.; Edgington, R.; Hébert, C.; Ferretti, P.; Bergonzo, P.; Jackman, R. B.

    2015-01-01

    OBJECTIVE: We quantitatively investigate the biocompatibility of chemical vapour deposited (CVD) nanocrystalline diamond (NCD) after the inclusion of boron, with and without nanostructuring. The nanostructuring method involves a novel approach of growing NCD over carbon nanotubes (CNTs) that act as a 3D scaffold. This nanostructuring of BNCD leads to a material with increased capacitance, and this along with wide electrochemical window makes BNCD an ideal material for neural interface applica...

  10. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    Science.gov (United States)

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. PMID:26413646

  11. Adsorption of diazinon and hinosan molecules on the iron-doped boron nitride nanotubes surface in gas phase and aqueous solution: A computational study

    Science.gov (United States)

    Farmanzadeh, Davood; Rezainejad, Hamid

    2016-02-01

    In this study, the geometric structures and electronic properties of two widely used organophosphorus pesticides, diazinon and hinosan, boron nitride nanotubes (BNNTs) and Fe doped boron nitride nanotubes (FeBNNTs) as adsorbents of these pesticides are studied by density functional theory calculation as well as dispersion correction by Grimme method. The results show that Fe doping in boron nitride nanotubes structures increases the potency of nanotubes to adsorb mentioned pesticides, especially when Fe atom located instead of N atom. Comparing the adsorption energies of diazinon on FeBNNTs with ones for hinosan demonstrate that the adsorption of hinosan is energetically more favorable by FeBNNTs. Assessment of adsorption energies in aqueous solution confirmed significant decrease in their values compared to ones in gaseous phase. However, the adsorption of diazinon and hinosan on both BNNTs and FeBNNTs are exothermic. So, BNNTs and FeBNNTs may be promising candidates as appropriate adsorbents for adsorbing diazinon and hinosan. Also, the results of calculations have revealed that van der Waals interaction energies are remarkably large in adsorption of diazinon and hinosan on all boron nitride nanotubes.

  12. Effect of deposition temperature on boron-doped carbon coatings deposited from a BCl3-C3H6-H2 mixture using low pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    A mixture of propylene, hydrogen and boron trichloride was used to fabricate boron-doped carbon coatings by using low pressure chemical vapor deposition (LPCVD) technique. Effect of deposition temperature on deposition rate, morphologies, compositions and bonding states of boron-doped carbon coatings was investigated. Below 1273 K, the deposition rate is controlled by reaction dynamics. The deposition rate increases with increasing deposition temperature. The activation energy is 208.74 kJ/mol. Above 1273 K, the deposition rate decreases due to smaller critical radius rc and higher nuclei formation rate J with increasing temperature. Scanning electron microscopy shows that the structure changes from glass-like to nano-laminates with increasing deposition temperature. The boron concentration decreases with increasing deposition temperature, corresponding with increasing carbon concentration. The five types of bonding states are B-C, B-sub-C, BC2O, BCO2 and B-O. B-sub-C and BC2O are the main bonding states. The reactions are dominant at all temperatures, in which the B-sub-C and PyC are formed.

  13. A comparative study of electrochemical oxidation of methidation organophosphorous pesticide on SnO2 and boron-doped diamond anodes

    OpenAIRE

    Hachami, Fatima; Errami, Mohamed; Bazzi, Lahcen; Hilali, Mustapha; Salghi, Rachid; Jodeh, Shehdeh; Hammouti, Belkheir; Hamed, Othman A.

    2015-01-01

    Background Electrochemical oxidation considered to be among the best methods in waste water desalination and removing toxic metals and organic pesticides from wastewater like Methidathion. The objective of this work is to study the electrochemical oxidation of aqueous wastes containing Methidathion using boron doped diamond thin-film electrodes and SnO2, and to determine the calculated partial charge and frontier electron density parameters. Results Electrolysis parameters such as current den...

  14. Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

    Science.gov (United States)

    Srathongluan, Pornpimol; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab; Tubtimtae, Auttasit

    2016-11-01

    This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu2-xTe nanoparticles (NPs), leading to a narrower Eg equal to 0.58eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO3, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO3/boron-doped [Cu2-xTe(17)/MnTe(11)] structure with a photocurrent density (Jsc)=16.43mA/cm(2), an open-circuit voltage (Voc)=0.305V and a fill factor (FF)=28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material. PMID:27451035

  15. Large area deposition of boron doped nano-crystalline diamond films at low temperatures using microwave plasma enhanced chemical vapour deposition with linear antenna delivery

    Czech Academy of Sciences Publication Activity Database

    Taylor, Andrew; Fekete, Ladislav; Hubík, Pavel; Jäger, Aleš; Janíček, P.; Mortet, Vincent; Mistrík, J.; Vacík, Jiří

    2014-01-01

    Roč. 47, AUG (2014), s. 27-34. ISSN 0925-9635 R&D Projects: GA MŠk(CZ) LM2011026; GA MŠk(XE) LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : large area * low temperature * boron doped nano-crystalline diamond * linear antenna MW PE CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.919, year: 2014

  16. Electrochemical oxidation using a boron doped diamond electrode as a water treatment process- removal of residual micropollutants and inac-tivation of microorganisms

    OpenAIRE

    Rajab, Mohamad Dib

    2015-01-01

    A boron doped diamond electrode was tested for the removal of micropollutants and inactivation of microorganisms. The results showed that higher current densities accelerated the degradation process, whereas an increase in water complexity decelerated it. A current density between 100-200 mA cm-2 would completely remove micropollutants and limit the formation of inorganic by-products. A synergic effect of reactive oxygen and chlorine species assured the disinfection capability of the electrod...

  17. Synthesis, Characterization, and Tribological Evaluation of TiO2-Reinforced Boron and Nitrogen co-Doped Reduced Graphene Oxide Based Hybrid Nanomaterials as Efficient Antiwear Lubricant Additives.

    Science.gov (United States)

    Jaiswal, Vinay; Kalyani; Umrao, Sima; Rastogi, Rashmi B; Kumar, Rajesh; Srivastava, Anchal

    2016-05-11

    The microwave-synthesized reduced graphene oxide (MRG), boron-doped reduced graphene oxide (B-MRG), nitrogen-doped reduced graphene oxide (N-MRG), boron-nitrogen-co-doped reduced graphene oxide (B-N-MRG), and TiO2-reinforced B-N-MRG (TiO2-B-N-MRG) nanomaterials have been synthesized and characterized by various state-of-the-art techniques, like Raman spectroscopy, powder X-ray diffraction, scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. Furthermore, the tribological properties of prepared nanomaterials as antiwear additives in neutral paraffin oil have been evaluated using a four-ball machine at an optimized additive concentration (0.15% w/v). The tribological parameters, like mean wear scar diameter, coefficient of friction, and wear rates, revealed that these nanomaterials have potential to be developed as environmentally friendly sulfated-ash-, phosphorus-, and sulfur-free antiwear lubricant additives. The friction- and wear-reducing behavior of MRG increased upon successive doping of nitrogen, boron, and both nitrogen and boron. Among these additives, B-N-co-doped MRG shows superior tribological behavior in paraffin base oil. Besides this, the load-carrying properties of B-N-co-doped MRG have significantly improved after its reinforcement with TiO2 nanoparticles. A comparative study of the surface morphology of a lubricated track in the presence of various additives has been assessed by SEM and contact-mode atomic force microscopy. The X-ray photoelectron spectroscopy studies have proved that the excellent lubrication properties of TiO2-B-N-MRG are due to the in situ formation of a tribofilm composed of boron nitride, adsorbed graphene layers, and tribosintered TiO2 nanoparticles during the tribocontact. Being sulfur-, halogen-, and phosphorus-free, these graphene-based nanomaterials act as green antiwear additives, protecting interacting

  18. Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate

    International Nuclear Information System (INIS)

    The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong ability to degrade wastewater, good corrosion stability and long lifetime. These excellent characteristics of BDD/Ta have been explained in terms of Rutherford backscattering (RBS) experiments. RBS investigation revealed that the continuous transient layer at the interface between boron-doped diamond film and Ta-substrate was formed and the microstructure of the continuous transient layer given by the continuous distribution of all element contents at the interface was obtained. The thicknesses of boron-doped diamond film and the continuous transient layer were about equal to 8000 x 1015 atoms/cm2 and 5800 x 1015 atoms/cm2, respectively. The formation of the continuous transient layer at the interface can eliminate the mismatch of thermal expansion coefficients (TEC) at the interface and only lead to the slow change of TEC because of the continuous distribution of element contents of the film and substrate in the transient layer at the interface. Thus, there is no residual stress to concentrate on the interface and the stress-corrosion delamination of the film disappears. Therefore, the corrosion stability and lifetime of BDD/Ta increase and last well, that have been verified by X-ray diffraction (XRD) experiments.

  19. Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liang Jiachang, E-mail: jcliang@cauc.edu.cn [College of Science, Civil Aviation University of China, Jin Bei highway No.2898, Southern campus of Civil Aviation, Tianjin 300300 (China); Gao Chengyao [Chinese People' s Armed Police Forces Academy, Langfang, Hebei 065000 (China); Zhang Liping [College of Science, Civil Aviation University of China, Jin Bei highway No.2898, Southern campus of Civil Aviation, Tianjin 300300 (China); Jiang Lihui [Tianjin Key Laboratory for Advanced Signal Processing, Civil Aviation University of China, Tianjin 300300 (China); Yang Zhengquan; Wang Zhiping; Ji Chaohui [College of Science, Civil Aviation University of China, Jin Bei highway No.2898, Southern campus of Civil Aviation, Tianjin 300300 (China); Le Xiaoyun; Rong Cuihua [School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100083 (China); Zhang Jian [Hainan Airlines Group, Hainan 570206 (China)

    2011-05-01

    The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong ability to degrade wastewater, good corrosion stability and long lifetime. These excellent characteristics of BDD/Ta have been explained in terms of Rutherford backscattering (RBS) experiments. RBS investigation revealed that the continuous transient layer at the interface between boron-doped diamond film and Ta-substrate was formed and the microstructure of the continuous transient layer given by the continuous distribution of all element contents at the interface was obtained. The thicknesses of boron-doped diamond film and the continuous transient layer were about equal to 8000 x 10{sup 15} atoms/cm{sup 2} and 5800 x 10{sup 15} atoms/cm{sup 2}, respectively. The formation of the continuous transient layer at the interface can eliminate the mismatch of thermal expansion coefficients (TEC) at the interface and only lead to the slow change of TEC because of the continuous distribution of element contents of the film and substrate in the transient layer at the interface. Thus, there is no residual stress to concentrate on the interface and the stress-corrosion delamination of the film disappears. Therefore, the corrosion stability and lifetime of BDD/Ta increase and last well, that have been verified by X-ray diffraction (XRD) experiments.

  20. Preparation of grain size controlled boron-doped diamond thin films and their applications in selective detection of glucose in basic solutions

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD).The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy.The electrochemical responses of K4Fe(CN)6 on different BDD electrodes were investigated.The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes.The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution.The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA).The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface,and the linear response range,sensitivity and the low detection limit were 0.25–10 mM,189.1 μA mmol-1 cm-2 and 25 μM (S/N=3) for glucose in the presence of AA and UA,respectively.

  1. Ammonium hydroxide (NH{sub 4}OH) as etch-stop chemical for highly boron-doped silicon {delta}-layers

    Energy Technology Data Exchange (ETDEWEB)

    Hammer, Oliver; Palitschka, Florian; Lochner, Helmut; Kubot, Tina; Kulaga-Egger, Dorota; Beckmeier, Daniel; Axt, Carolin; Biba, Josef; Schindler, Ronny; Dressler, Marc; Sulima, Torsten; Hansch, Walter [Universitaet der Bundeswehr Muenchen, Institut fuer Physik, Neubiberg (Germany)

    2010-07-01

    The downscaling process in current microelectronics results in smaller devices and thinner layers. A proper etch-stop for such thin layers, e.g. boron-doped {delta}-layer (<10nm) in a vertical device, becomes more and more challenging. Therefore an etchant with an exceedingly high selectivity to boron-doped silicon is needed. Only two wet-chemical silicon etchants, TMAH and the not common NH{sub 4}OH, are capable for CMOS technology and are not too highly toxic. The major advantage of NH{sub 4}OH in comparison to TMAH is its high selectivity of 1:8000 for intrinsic silicon with respect to boron-doped silicon. The disadvantages are formation of hillocks and more pronounced surface roughness compared to TMAH. We optimize etching parameters by variation of the etch temperature, the concentration of NH{sub 4}OH in water and the ratio of 2-propanol in the solution to achieve an etch-stop at a {delta}-layer without breaking it. Recent experiments show that a solution of TMAH and 2-propanol decreases the surface roughness and the formation of hillocks. Due to this we also perform tests with 2-propanol in a NH{sub 4}OH solution. Finally we etch a bulk unipolar device (BUD) to determine the electrical characteristics of the exposed {delta}-layer.

  2. Kinetic modeling of grain growth in polycrystalline silicon films doped with phosphorus and boron

    International Nuclear Information System (INIS)

    It has been shown that doping of silicon with P or As leads to enhanced rates of grain growth while doping with B has little effect, except in compensation of the effect of P or As. Here the authors report a detailed study of the effects of P of doping on normal grain growth in silicon films. They also outline a kinetic model for grain growth which is consistent with the various observed effects of dopants. This model is based on the assumption that dopants primarily affect grain boundary mobilities and that grain boundary motion occurs through parallel diffusive and non-diffusive processes. It is further assumed that the rate of the diffusive processes. It is further assumed that the rate of the diffusive process is proportional to the vacancy concentration which is a known function of the electron concentration

  3. Thermodynamical study of boron doped CeX3 (X=Pd, Rh)

    Science.gov (United States)

    Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini

    2016-05-01

    The structural, electronic, thermal, and optical properties of cubic non magnetic CeX3(X=Pd, Rh) compounds which crystallize in the Au3Cu structure have been studied using the projected augmented wave (PAW) method within the density functional theory (DFT) with generalized gradient approximation (GGA) for exchange correlation potential. In this paper we have calculated the band structure which are interpreted using the density of states. The optical properties such as extinction coefficients clearly illustrate the changes in CeX3 due to intercalation of boron. Lattice instability is observed in CePd3B from the calculated dynamical properties.

  4. Boron and aluminium doping in SiC and its passivation by hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Deak, Peter; Aradi, Balint; Gali, Adam [Budapest University of Technology and Economics, Department of Atomic Physics, Budapest (Hungary)]. E-mail: p.deak@eik.bme.hu

    2001-10-08

    Extensive calculations regarding the formation energy of interstitial hydrogen and hydrogen-vacancy complexes in different charge states have been carried out using the local density approximation to ab initio density functional theory with a plane-wave basis and norm-conserving pseudopotentials on supercells of cubic (3C) SiC. Based on these results the hydrogen concentration of as-grown or H-plasma treated SiC is estimated and its effect on the net carrier concentration is given. Incorporation of B and Al in or without the presence of hydrogen has been investigated in hexagonal (4H) SiC supercells. The possible origins of the shallow and deep boron acceptors is discussed. It is found that the presence of boron promotes hydrogen incorporation during growth in the form of passive B+H complexes. The same is not true for Al. If Al+H complexes are formed (say, after H-plasma treatment), the structure of this complex is different from that of the B+H complexes. The calculated difference between the dissociation energies is 0.9 eV. (author)

  5. Effect of Polishing on the Friction Behaviors and Cutting Performance of Boron-Doped Diamond Films on WC-Co Inserts

    Science.gov (United States)

    Wang, Liang; Shen, Bin; Sun, Fanghong; Zhang, Zhiming

    2014-04-01

    Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman spectroscopy, 3D surface topography based on white-light interferometry and Rockwell hardness tester. The effects of mechanical polishing on the friction behavior and cutting performance of B-doped diamond are evaluated by ball-on-plate type reciprocating tribometer and turning of aluminum alloy 7075 materials, respectively. For comparison, the same tests are also conducted for the bare WC-Co inserts with smooth surface. Friction tests suggest that the unpolished and polished B-doped diamond films possess relatively low fluctuation of friction coefficient than as-received bare WC-Co samples. The average stable friction coefficient for B-doped diamond films decreases apparently after mechanical polishing. The values for WC-Co sample, unpolished and polished B-doped diamond films are approximately 0.38, 0.25 and 0.11, respectively. The cutting results demonstrate that the low friction coefficient and high adhesive strength of B-doped diamond films play an essential role in the cutting performance enhancement of the WC-Co inserts. However, the mechanical polishing process may lower the adhesive strength of B-doped diamond films. Consequently, the polished B-doped diamond coated inserts show premature wear in the machining of adhesive aluminum alloy materials.

  6. Sintering of nano crystalline silicon carbide by doping with boron carbide

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-06-01

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from 6H to 4H was observed.

  7. Control of electron transfer kinetics at boron-doped diamond electrodes by specific surface modification

    OpenAIRE

    Duo, Ilaria; Comninellis, Christos

    2005-01-01

    Diamond films with different levels of doping have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond. The electrochemical properties of diamond mostly depend on the operating conditions during the deposition of the film and on the treatment of the surface. The absence so far of a standard procedure in the production and treatment of diamond films has created a wide range of diamond quality and proper...

  8. Control of electron transfer kinetics at boron-doped diamond electrodes by specific surface modification

    OpenAIRE

    Duo, Ilaria

    2003-01-01

    Diamond films with different levels of doping have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond. The electrochemical properties of diamond mostly depend on the operating conditions during the deposition of the film and on the treatment of the surface. The absence so far of a standard procedure in the production and treatment of diamond films has created a wide range of diamond quality and proper...

  9. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    International Nuclear Information System (INIS)

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L-1 H2SO4 solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L-1 (r2 = 0.999), with a detection limit of 7.1 μmol L-1 for PC and 3.8 μmol L-1 for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  10. XPS study of ruthenium tris-bipyridine electrografted from diazonium salt derivative on microcrystalline boron doped diamond.

    Science.gov (United States)

    Agnès, Charles; Arnault, Jean-Charles; Omnès, Franck; Jousselme, Bruno; Billon, Martial; Bidan, Gérard; Mailley, Pascal

    2009-12-28

    Boron doped diamond (BDD) functionalization has received an increasing interest during the last few years. Such an infatuation comes from the original properties of BDD, including chemical stability or an electrochemical window, that opens the way for the design of (bio)sensors or smart interfaces. In such a context, diazonium salts appear to be well suited for BDD functionalization as they enable covalent immobilization of functional entities such as enzymes or DNA. In this study we report microcrystalline BDD functionalization with a metallic complex, ruthenium tris(bipyridine), using the p-(tris(bipyridine)Ru(2+))phenyl diazonium salt. Electrografting using cyclic voltammetry (CV) allowed the formation of a ruthenium complex film that was finely characterized using electrochemistry and X-ray photoelectron spectroscopy (XPS). Moreover, we showed that chronopotentiometry (CP) is a convenient tool to monitor Ru complex film deposition through the control of the electrochemical pulse parameters (i.e. current density and pulse duration). Finally, such a control was demonstrated through the correlation between electrochemical and XPS characterizations. PMID:20024438

  11. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

    2013-09-15

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  12. Application of electrochemical technology for removing petroleum hydrocarbons from produced water using lead dioxide and boron-doped diamond electrodes.

    Science.gov (United States)

    Gargouri, Boutheina; Gargouri, Olfa Dridi; Gargouri, Bochra; Trabelsi, Souhel Kallel; Abdelhedi, Ridha; Bouaziz, Mohamed

    2014-12-01

    Although diverse methods exist for treating polluted water, the most promising and innovating technology is the electrochemical remediation process. This paper presents the anodic oxidation of real produced water (PW), generated by the petroleum exploration of the Petrobras plant-Tunisia. Experiments were conducted at different current densities (30, 50 and 100 mA cm(-2)) using the lead dioxide supported on tantalum (Ta/PbO2) and boron-doped diamond (BDD) anodes in an electrolytic batch cell. The electrolytic process was monitored by the chemical oxygen demand (COD) and the residual total petroleum hydrocarbon [TPH] in order to know the feasibility of electrochemical treatment. The characterization and quantification of petroleum wastewater components were performed by gas chromatography mass spectrometry. The COD removal was approximately 85% and 96% using PbO2 and BDD reached after 11 and 7h, respectively. Compared with PbO2, the BDD anode showed a better performance to remove petroleum hydrocarbons compounds from produced water. It provided a higher oxidation rate and it consumed lower energy. However, the energy consumption and process time make useless anodic oxidation for the complete elimination of pollutants from PW. Cytotoxicity has shown that electrochemical oxidation using BDD could be efficiently used to reduce more than 90% of hydrocarbons compounds. All results suggest that electrochemical oxidation could be an effective approach to treat highly concentrated organic pollutants present in the industrial petrochemical wastewater and significantly reduce the cost and time of treatment. PMID:25129707

  13. Transport Properties of p-n Junctions Formed in Boron/Nitrogen Doped Carbon Nanotubes and Graphene Nanoribbons

    Science.gov (United States)

    Hammouri, Mahmoud; Vasiliev, Igor

    2014-03-01

    We apply ab initio computational methods based on density functional theory to study the transport properties of p-n junctions made of single-walled carbon nanotubes and graphene nanoribbons. The p-n junctions are formed by doping the opposite ends of carbon nanostructures with boron and nitrogen atoms. Our calculations are carried out using the SIESTA electronic structure code combined with the generalized gradient approximation for the exchange-correlation functional. The transport properties are calculated using a self-consistent nonequilibrium Green's function method implemented in the TranSIESTA package. The modeled nanoscale p-n junctions exhibit linear I-V characteristics in the forward bias and nonlinear I-V characteristics with a negative differential resistance in the reverse bias. The computed transmission spectra and the I-V characteristics of the p-n junctions are compared to the results of other theoretical studies and to the available experimental data. Supported by NMSU GREG Award and by NSF CHE-1112388.

  14. Development of an electrochemical sensor for the determination of the total antioxidant capacity in berries based on boron doped diamond

    Directory of Open Access Journals (Sweden)

    BRUNA PEKEC

    2013-02-01

    Full Text Available Many antioxidants can be electrochemically oxidized using graphite-based electrodes; nevertheless problems arise due to the strong adsorption of redox species at the sensing area. We have demonstrated that boron doped diamond (BDD electrodes do not show this property, which can be exploited for the design of a new amperometric sensor for the quantification of antioxidants as “total antioxidant capacity” (AOC. As reference substances hydroquinone (HQ and 6-hydroxy-2,5,7,8-tetramethylchromane-2-carboxylic acid (Trolox were studied in more detail. The supporting electrolyte was a phosphate buffer solution (PBS, 0.1 mol/L, pH 7.0. The limits of detection (LOD were 1.5 mg/L and 2.5 mg/L for HQ and Trolox, respectively. The repeatability was 3 % RSD for concentration of 200 mg/L HQ. The method could be applied for the determination of AOC in different berry samples, such as strawberry, blueberry, grape and bramble. A comparison with a standard photometric assay showed good correlation between both methods. The BDD sensor features good reproducibility without fatiguing over at least two months of operation.

  15. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Vasile Ostafe

    2008-07-01

    Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  16. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

    2014-03-15

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  17. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    International Nuclear Information System (INIS)

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques

  18. Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation

    Science.gov (United States)

    Wang, Qian; Li, Bincheng

    2016-04-01

    Light-induced degradation (LID) effects of boron-doped Cz silicon wafers without surface passivation are investigated in details by photocarrier radiometry (PCR). The resistivity of all samples is in the range of 0.006 Ω {\\cdot } {cm} to 38 Ω {\\cdot } {cm}. It is found that light-induced changes in surface state occupation have a great effect on LID under illumination. With the increasing contribution of light-induced changes in surface state occupation, the generation rate of the defect decreases. The light-induced changes in surface state occupation and light-induced degradation dominate the temporal behaviors of the excess carrier density of high- and low-resistivity Si wafers, respectively. Moreover, the temporal behaviors of PCR signals of these samples under laser illumination with different powers, energy of photons, and multiple illuminations were also analyzed to understand the light-induced change of material properties. Based on the nonlinear dependence of PCR signal on the excitation power, a theoretical model taking into account both light-induced changes in surface state occupation and LID processes was proposed to explain those temporal behaviors.

  19. Anodic oxidation of ketoprofen-An anti-inflammatory drug using boron doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Murugananthan, M., E-mail: muruga.chem@gmail.com [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Latha, S.S.; Bhaskar Raju, G. [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Yoshihara, S. [Department of Advanced Interdisciplinary Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2010-08-15

    The mineralization of ketoprofen (KP) by anodic oxidation was studied by employing boron doped diamond (BDD) and Pt electrodes. The redox behavior of KP molecule, fouling of electrodes, generation of oxygen and active chlorine species were studied by cyclic voltammetry. The effect of electrolyte, pH of aqueous medium and applied current density on the mineralization behavior of KP was also investigated. The degradation and mineralization were monitored by UV-vis spectrophotometer and total organic carbon analyzer, respectively. The results were explained in terms of in situ generation of hydroxyl radical ({center_dot}OH), peroxodisulfate (S{sub 2}O{sub 8}{sup 2-}), and active chlorine species (Cl{sub 2}, HOCl, OCl{sup -}). The physisorbed {center_dot}OH on BDD was observed to trigger the combustion of KP in to CO{sub 2} and H{sub 2}O. The poor mineralization at both BDD and Pt anodes in the presence of NaCl as supporting electrolyte was ascribed to the formation of chlorinated organic compounds which are refractory. Complete mineralization of KP molecule was achieved using Na{sub 2}SO{sub 4} as supporting electrolyte.

  20. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    Science.gov (United States)

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level. PMID:18585340

  1. Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces

    Directory of Open Access Journals (Sweden)

    Tine Brülle

    2011-12-01

    Full Text Available Gold nanoparticles were prepared by electrochemical deposition on highly oriented pyrolytic graphite (HOPG and boron-doped, epitaxial 100-oriented diamond layers. Using a potentiostatic double pulse technique, the average particle size was varied in the range from 5 nm to 30 nm in the case of HOPG as a support and between < 1 nm and 15 nm on diamond surfaces, while keeping the particle density constant. The distribution of particle sizes was very narrow, with standard deviations of around 20% on HOPG and around 30% on diamond. The electrocatalytic activity towards hydrogen evolution and oxygen reduction of these carbon supported gold nanoparticles in dependence of the particle sizes was investigated using cyclic voltammetry. For oxygen reduction the current density normalized to the gold surface (specific current density increased for decreasing particle size. In contrast, the specific current density of hydrogen evolution showed no dependence on particle size. For both reactions, no effect of the different carbon supports on electrocatalytic activity was observed.

  2. Flow-injection determination of iodide ion in nuclear emergency tablets, using boron-doped diamond thin film electrode

    International Nuclear Information System (INIS)

    The electrochemical determination of iodide was studied at boron-doped diamond thin film electrodes (BDD) using cyclic voltammetry (CV) and flow-injection (FI) analysis, with amperometric detection. Cyclic voltammetry of iodide was conducted in a phosphate buffer pH 5. Experiments were performed using glassy carbon (GC) electrode as a comparison. Well-defined oxidation waves of the quasi-reversible cyclic voltammograms were observed at both electrodes. Voltammetric signal-to-background ratios (S/B) were comparable. However, the GC electrode gives much greater in the background current as usual. The potential sweep rate dependence exhibited that the peak current of iodide oxidation at 1mM varied linearly (r2 = 0.998) with the square root of the scan rate, from 0.01 to 0.30Vs-1. This result indicates that the reaction is a diffusion-controlled process with negligible adsorption on BDD surface, at this iodide concentration. Results of the flow-injection analysis show a highly reproducible amperometric response. The linear working range was observed up to 200μM (r2 = 0.999). The detection limit, as low as 0.01μM (3σ of blank), was obtained. This method was successfully applied for quantification of iodide contents in nuclear emergency tablets

  3. Anodic oxidation of ketoprofen-An anti-inflammatory drug using boron doped diamond and platinum electrodes

    International Nuclear Information System (INIS)

    The mineralization of ketoprofen (KP) by anodic oxidation was studied by employing boron doped diamond (BDD) and Pt electrodes. The redox behavior of KP molecule, fouling of electrodes, generation of oxygen and active chlorine species were studied by cyclic voltammetry. The effect of electrolyte, pH of aqueous medium and applied current density on the mineralization behavior of KP was also investigated. The degradation and mineralization were monitored by UV-vis spectrophotometer and total organic carbon analyzer, respectively. The results were explained in terms of in situ generation of hydroxyl radical (·OH), peroxodisulfate (S2O82-), and active chlorine species (Cl2, HOCl, OCl-). The physisorbed ·OH on BDD was observed to trigger the combustion of KP in to CO2 and H2O. The poor mineralization at both BDD and Pt anodes in the presence of NaCl as supporting electrolyte was ascribed to the formation of chlorinated organic compounds which are refractory. Complete mineralization of KP molecule was achieved using Na2SO4 as supporting electrolyte.

  4. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    Science.gov (United States)

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour). PMID:23870896

  5. Applicability of boron-doped diamond electrode to the degradation of chloride-mediated and chloride-free wastewaters

    International Nuclear Information System (INIS)

    The electrochemical degradation of chloride-mediated and chloride-free dye wastewaters was investigated on a boron-doped diamond (BDD) electrode in comparison with that on a dimensionally stable anode (DSA), and the applicability of BDD electrode to the degradation of these two kinds of wastewaters was explored. In chloride-free wastewater, the electrochemical degradation efficiency of dye on BDD electrode was much higher than that on DSA, with a chemical oxygen demand (COD) removal of 100% and 26% for BDD and DSA, respectively. In chloride-mediated dye wastewater, COD removal was faster than that in chloride-free wastewater on both BDD and DSA electrodes with COD removal efficiencies higher than 95%, whereas the rate of COD removal on DSA was faster than that on BDD electrode. The investigation indicates that DSA is more suitable than BDD electrode in degradation of originally chloride contained dye wastewaters for the sake of energy and time saving. However, for chloride-free dye wastewaters, with the aim of environmental protection, BDD electrode is more appropriate to realize complete mineralization. At the same time, the secondary pollution can be avoided

  6. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    Science.gov (United States)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  7. Organic Solar Cells with Boron- or Nitrogen-Doped Carbon Nanotubes in the P3HT : PCBM Photoactive Layer

    Directory of Open Access Journals (Sweden)

    Godfrey Keru

    2016-01-01

    Full Text Available Either boron- or nitrogen-doped carbon nanotubes (B- or N-CNTs were incorporated in bulk heterojunction organic solar cells photoactive layer composed of poly(3-hexylthiophene (P3HT : (6,6-phenyl-C61-butyric acid methyl ester (PCBM. The physical and chemical properties were investigated using different spectroscopic techniques. The cell performance was followed from their current-voltage (J-V characteristics. Recombination dynamics of the photo-generated free charge carriers were investigated using micro- to milliseconds transient absorption spectroscopy (TAS. Transmission electron microscopy (TEM images revealed the presence of cone structures and bamboo compartments in B-CNTs and N-CNTs, respectively. X-ray photoelectron spectroscopy (XPS revealed very little boron was substituted in the carbon network and presence of pyrrolic, pyridinic, and quaternary species of nitrogen in N-CNTs. J-V characteristics were found to be similar for the devices with B- and N-CNTs even though boron- and nitrogen-doped CNTs are known to have different properties, that is, p-type and n-type, respectively. TAS results showed that all devices had long lived free charge carriers but the devices with B- or N-CNTs had low power conservation efficiency and voltage.

  8. The influence of Cu-doping on aluminum nitride, silicon carbide and boron nitride nanotubes’ ability to detect carbon dioxide; DFT study

    Science.gov (United States)

    Mahdavifar, Zabiollah; Abbasi, Nasibeh

    2014-02-01

    In this research, the potential use of Cu-functionalized [4,4] silicon carbide (SiC), aluminum nitride (AlN) and boron nitride (BN) single-walled nanotubes as nanodevices for CO2 monitoring is investigated. It is found that Cu-doping the different sites of the considered nanotubes and combining these nanotubes with CO2 gas molecules are both exothermic processes, and the relaxed geometries are stable. Our results reveal that the CO2 gas molecules can be strongly physisorbed on the Cu-doped nanotubes, accompanied by large adsorption energy. Compared with the weak adsorption of CO2 molecule onto pristine BNNT and SiCNT, the CO2 molecule tends to be strongly physisorbed onto Cu-decorated BNNT and SiCNT with an appreciable adsorption energy. Furthermore, the results indicate that Cu-functionalized SiCNT is more favorable than Cu-doped BNNT and AlNNT structures for CO2 adsorption. Natural bond orbital analysis indicates that the adsorption of a CO2 molecule onto Cu-doped nanotubes is influenced by the electronic conductance and mechanical properties of the nanotube, which could serve as a signal for a gas sensor. It appears that the considerable charge transfer from the Cu-doped nanotubes to a CO2 molecule reduces the energy gap. These observations suggest that the Cu-doped-SiCNT, -BNNT and -AlNNT can be introduced as promising candidates for gas sensor devices that detect CO2 molecules.

  9. Efficient Photocatalytic Hydrogen Evolution over Platinum and Boron Co-doped TiO2 Photoatalysts

    OpenAIRE

    JIN, ZHILIANG; Xuqiang HAO; Shixiong MIN; Xu, Jing; Yuan, Hong

    2014-01-01

    In this paper, the new photocatalyst, Ptx-/TiO2-yBy was prepared by impregnation method via coupling with a inorganic water splitting system, namely, a ternary system K+,Na+/B4O72- - H2O for hydrogen evolution. The integration process of the preparation for B doping Pt/TiO2 with the significant photocatalytic hydrogen evolution in the ternary system K+,Mg2+/B4O72- - H2O and K+,Na+/B4O72- - H2O were accomplished by impregnation in situ. The photocatalyst Ptx-/TiO2-yBy synthesis and the photoca...

  10. High quality cubic boron nitride films - A starting point for doping experiments

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Hong; Pongrac, Ivan; Wang, Xuyang; Boyen, Hans-Gerd; Ziemann, Paul [Institute of Solid State Physics, University of Ulm, D-89081 Ulm (Germany); Dohuard, Bastien; Houssiau, Laurent [LISE, University of Namur, B-5000 Namur (Belgium); Bittencourt, Carla [Materia Nova, B- 7000 Mons (Belgium)

    2007-07-01

    After the successful demonstration that c-BN films can be epitaxially grown at 900 C on top of (001)-oriented diamond substrates, such high quality samples serve as starting point for their doping with Si atoms. For this purpose, a small stripe of a Si-wafer is co-sputtered during the c-BN deposition and the resulting concentration of Si as well as of unintentionally incorporated contaminants are determined by XPS, AES for near surface concentrations and ToF-SIMS for depth profiling. These results will be related to first temperature-dependent resistance measurements.

  11. Measuring the Terahertz Refractive Index of Boron-Doped Silicon Using a Photoconducting Antenna Terahertz Generator

    Science.gov (United States)

    McNamara, Brendan P.

    The frequency range commonly referred to as the terahertz gap occurs between the infrared and microwave regions of the electromagnetic spectrum. This range of frequencies is highly suited to investigating the free carrier interactions of materials, as the range is particularly sensitive to these interactions. Using terahertz time-domain spectroscopy (THz-TDS), it is possible to measure the effect these interactions have on a terahertz pulse and, using classical optical techniques, determine the terahertz refractive index of a given material, which is directly related to the free carrier spectrum of said material. Knowing the refractive index of a material in the THz range opens the possibility of future terahertz applications for said material, including a non-destructive dopant testing of silicon. In this work, a series of Silicon on Insulator (SOI) wafer samples are implanted with boron in a range of carrier concentrations. Using a photoconducting antenna (PCA), high-frequency laser pulses were converted to THz pulses and the complex terahertz refractive index of the samples was then measured in the 0.2-2 THz frequency range. This measurement is a direct examination of the free carrier spectrum through experimental methods. The results are compared with the predictions of the Drude model for the free carrier spectrum across this frequency range and are found to closely coincide at higher carrier concentrations, indicating that the behavior of free holes in p-type silicon can likely be described classically at high carrier densities, consistent with previous work on n-type silicon.

  12. Potentiometric application of boron- and phosphorus-doped glassy carbon electrodes

    Directory of Open Access Journals (Sweden)

    ZORAN V. LAUSEVIC

    2001-03-01

    Full Text Available Acomparative study was carried out of the potentiometric application of boronand phosphorus-doped and undoped glassy carbon samples prepared at the same heat treatment temperature (HTT 1000°C. The electrochemical activities of the obtained electrode materials were investigated on the example of argentometric titrations. It was found that the electrochemical behaviour of the doped glassy carbon samples are very similar to a Sigri (undoped glassy carbon sample (HTT 2400°C. The experiments showed that the potentiometric response depends on the polarization mode, the nature of the sample, the pretreatment of the electrode surface, and the nature of the supporting electrolyte. The amounts of iodide, bromide, and of chloridewere determined to be 1.27 mg, 0.80 mg and 0.54 mg, respectively, with a maximum relative standard deviation of less than 1.1%. The obtained results are in good agreement with the results of comparative potentiometric titrations using a silver indicator electrode. The titrationmethod was applied to the indirect determination of pyridoxine hydrochloride, i.e., vitamin B6.

  13. Electrochemical characterisation and oxygen evolution at a heavily boron doped diamond electrode

    International Nuclear Information System (INIS)

    Characterisation of a commercial heavily doped BDD electrode demonstrated it contains a small sp2 content, which on anodic potential scanning, is oxidised to CO/CO2. This surface modification alters the electrode activity, increasing the overpotential for the hydrogen and oxygen evolution reactions (HER and OER). Ex situ and in situ investigations indicate film morphology is mainly composed of 'chain of hills', presenting relatively high differential capacitance values and morphology factor, which is attributed to the effect of surface states and high surface roughness of the BDD film. The voltammetric behaviour depends on the applied potential; the heavily doped BDD electrode behaving as a metallic electrode at more anodic potentials. Polarisation curves (potentiostatic (1 mV s-1) or galvanostatic (point-by-point)), recorded at different temperatures and H2SO4 concentrations, lead to the same conclusions. The high Tafel coefficients and low apparent electronic transfer coefficient (αA) are independent of overpotential and temperature but show a dependence on H2SO4 concentration. The linear relationship observed between the apparent electrochemical enthalpy of activation (ΔHhashmarkη) and overpotential supports αA is constant. An OER mechanism was proposed taking into account the absence of adsorption sites at the BDD surface. The OER is inhibited, explaining the high overpotentials and elevated ΔHhashmar'Kη values

  14. Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

    Directory of Open Access Journals (Sweden)

    Kang Xia

    2014-03-01

    Full Text Available Doping is an effective approach that allows for the intrinsic modification of the electrical and chemical properties of nanomaterials. Recently, a graphene and carbon nanotube hybrid structure (GNHS has been reported, which extends the excellent properties of carbon-based materials to three dimensions. In this paper, we carried out a first-time investigation on the tensile properties of the hybrid structures with different dopants. It is found that with the presence of dopants, the hybrid structures usually exhibit lower yield strength, Young’s modulus, and earlier yielding compared to that of a pristine hybrid structure. For dopant concentrations below 2.5% no significant reduction of Young’s modulus or yield strength could be observed. For all considered samples, the failure is found to initiate at the region where the nanotubes and graphene sheets are connected. After failure, monatomic chains are normally observed around the failure region. Dangling graphene layers without the separation of a residual CNT wall are found to adhere to each other after failure with a distance of about 3.4 Å. This study provides a fundamental understanding of the tensile properties of the doped graphene–nanotube hybrid structures, which will benefit the design and also the applications of graphene-based hybrid materials.

  15. H-terminated polycrystalline boron doped diamond electrode for geochemical sensing into underground components of nuclear repositories

    International Nuclear Information System (INIS)

    Document available in extended abstract form only. Nuclear waste repositories are being installed in deep excavated rock formations in some places in Europe to isolate and store radioactive waste. In France, Callovo-Oxfordian formation (COx) is potential candidate for nuclear waste repository. It is thus necessary to measure in situ the state of a structure's health during its entire life. The monitoring of the near-field rock and the knowledge of the geochemical transformations can be carried out by a set of sensors for a sustainable management of long-term safety, reversibility and retrievability. Among the chemical parameters, the most significant are pH, conductivity and redox potential. Wide band gap semiconductors are favored materials for chemical sensing because of their high stability to many chemical agents. Among the wide band gap materials, Chemical Vapor Deposition (CVD) boron doped diamond (BDD) benefits from a large band gap, which gives rise to a wide electrochemical potential window. It is moreover described as a radiation, corrosion and bio-corrosion resistant. These remarkable properties, in addition to a low double layer capacity and a low residual current, make BDD a promising material for geochemical sensor elaboration. This work aimed to investigate BDD- based electrodes coated with p-type polycrystalline BDD-hydrogen- terminated surfaces (1 cm2) for pH and/or redox measurements into the underground components of nuclear repositories. The boron-doped p-type channel was grown in a microwave plasma reactor (BJS 150). The boron-doped channel was hydrogen terminated by a hydrogen plasma treatment in the CVD reactor, resulting in full saturation of the surface carbon bonds with hydrogen atoms. Scanning Electron Microscopy (SEM) of the polycrystalline BDD coating with a Bore/Carbon ratio of 500 ppm shows the typical columnar growth of the polycrystalline CVD diamond. A homogeneous surface was observed concerning the crystallite size which average

  16. Electrochemical oxidation of amoxicillin in its pharmaceutical formulation at boron doped diamond (BDD electrode

    Directory of Open Access Journals (Sweden)

    Corneil Quand-Meme Gnamba

    2015-08-01

    Full Text Available In this work, voltammetric andelectrolysis experiments have been carried out on a conductive boron dopeddiamond (BDD electrode in solution containing amoxicillin in itspharmaceutical formulation. The physical characterization of the BDD surface byscanning electron microscopy (SEM reveals a polycrystalline structure withgrain sizes ranging between 0.3 and 0.6 µm. With Raman spectroscopy, BDDsurface is composed of diamons (Csp3 type carbon (Csp3and graphitic type carbon (Csp2. The electrochemical characterization of the BDD electrode in sulfuric acid electrolyte showed a wide potential window worthing 2.74 V. The oxidation of Amoxicillin showed an irreversible anodic wave on the voltammogram in the domain of water stability indicating a direct oxidation of amoxicillin at BDD surface. The treatment of Amoxicillin in the synthetic wastewaters under various constant current densities 20, 50, 100, 135 mA cm-2 on BDD showed that Amoxicillin is highly reducedunder 100 mA cm-2 reaching 92% of the Chemical Oxygen Demand (CODremoval after 5 h of electrolysis. Investigation performed in perchloric acidas supporting electrolyte led to 87% of COD removal after 5 h of electrolysis.Mineralization of amoxicillin occurs on BDD and the chemical oxygen demandremoval was higher in sulfuric acid than in perchloric acid owing to theinvolvement of the in-situ formed persulfate and perchlorate  to the degradation process mainly in the bulkof the solution. The instantaneous current efficiency (ICE presents anexponential decay indicating that the process was limited by diffusion. Thespecific energy consumed after 5h of the amoxicillin electrolysis was 0.096 kWh COD-1and 0.035 kWh COD-1 in sulfuric acid and in perchloric acidrespectively.

  17. Simultaneous determination of paracetamol and penicillin V by square-wave voltammetry at a bare boron-doped diamond electrode

    International Nuclear Information System (INIS)

    Highlights: ► Unmodified BDD electrode = sensitive electrochemical sensor for drugs determination. ► No special pretreatment of samples except simple dilution. ► Selective method, common compounds present in urine do not interfere in high excess. ► Simultaneous determination of PAR and PEN has yet not been published in literature. - Abstract: A simple, sensitive and selective square-wave voltammetry method for simultaneous determination of paracetamol and penicillin V on a bare (unmodified) boron-doped diamond electrode has been developed. The good potential separation of about 0.35 V between the oxidation peak potentials of both drugs present in mixture was found. It was found by cyclic voltammetry that paracetamol gave quasireversible wave and penicillin V provided irreversible oxidation peak. The effect of supporting electrolyte, pH and scan rate on voltammetric response of both drugs was studied to select the optimum experimental conditions. The optimal conditions for quantitative simultaneous determination were obtained in acetate buffer solution at pH 5.0. The oxidation peak of paracetamol and penicillin V showed a systematic increase in peak currents with increase of their concentration. The calibration curves for the simultaneous determination of paracetamol and penicillin V exhibited the good linear responses within the concentration range from 0.4 to 100 μM for both drugs. The detection limit was established to 0.21 and 0.32 μM for paracetamol and penicillin V, respectively. The method proved the good sensitivity, repeatability (RSD of 1.5 and 2.1% for mixture solution of 10 μM PCM and PEN) and selectivity when influence of interferents commonly existing in human urine was negligible. The practical analytical utility of proposed method was demonstrated by simultaneous determination of paracetamol and penicillin V in human urine samples, with results similar to those obtained using a high-performance liquid chromatography method as an

  18. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    International Nuclear Information System (INIS)

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L−1 of AOCl and ∼2.3 mg L−1 of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L−1, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L−1). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L−1 at 2.4 Ah L−1), which rapidly decreased to 4 mg L−1. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD−1 and 0.34 kWh gCOD−1, respectively, yet it did not demonstrate any improvement regarding by-products formation

  19. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  20. Electrochemical degradation of Novacron Yellow C-RG using boron-doped diamond and platinum anodes: Direct and Indirect oxidation

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Nature of electrode material decides the electrocatalytic mechanism followed. • Electrogenerated strong oxidants on BDD surface improve the color and organic load removal. • Chlorine active species act in solution cage oxidizing organic matter. - Abstract: The present study discusses the electrochemical degradation process of a textile dye, Novacron Yellow C-RG (NY), dissolved in synthetic wastewaters, via direct and indirect oxidation. Experiments were conducted using boron-doped diamond (BDD) and platinum supported on Ti (Pt/Ti) electrodes in the absence and presence of NaCl in the solution. The direct process for removing color is relatively similar for both anodes, while the electrochemical degradation is significantly accelerated by the presence of halogen salt in the solution. Interestingly, it does not depend on applied current density, but rather on NaCl concentration. Therefore, the electrochemical processes (direct/indirect) favor specific oxidation pathways depending on electrocatalytic material. Whereas, the Pt/Ti anode favors preferentially color removal by direct and indirect oxidation (100% of color removal) due to the fragmentation of the azo dye group; BDD electrode favors color and organic load removals in both processes (95% and up to 87%, respectively), due to the rupture of dye in different parts of its chemical structure. Parameters of removal efficiency and energy consumption for the electrochemical process were estimated. Finally, an explanation has been attempted for the role of halide, in relation with the oxygen evolution reaction, concomitant with the electrochemical incineration as well as electrocatalytic mechanisms, for each one of the electrodes used

  1. Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode

    International Nuclear Information System (INIS)

    Highlights: · Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. · Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl- ions. · Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. · PbO2 anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO2 anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L-1) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO2 anode, at any experimental condition. The best conditions are j = 5 mA cm-2 and 55 oC, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Qap) of only about 2 kA h m-3. Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Qap value of only 7 kA h m-3, with an energy consumption of about 30 kW h m-3. This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  2. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Segura, Sergi, E-mail: sergigarcia@ub.edu [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Keller, Jürg [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia); Brillas, Enric [Laboratori d’Electroquímica dels Materials i del Medi Ambient, Departament de Química Física, Facultat de Química, Universitat de Barcelona, Martí i Franquès 1-11, 08028 Barcelona (Spain); Radjenovic, Jelena, E-mail: j.radjenovic@awmc.uq.edu.au [Advanced Water Management Centre, The University of Queensland, Level 4, Gehrmann Bld. (60), St Lucia, QLD 072 (Australia)

    2015-02-11

    Graphical abstract: - Highlights: • Mineralization of secondary effluent by anodic oxidation with BDD anode. • Complete removal of 29 pharmaceuticals and pesticides at trace level concentrations. • Organochlorine and organobromine byproducts were formed at low μM concentrations. • Chlorine species evolution assessed to evaluate the anodic oxidation applicability. - Abstract: Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl{sup −} ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl{sub 2}/HClO/ClO{sup −}), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO{sup −} species led to the production of ClO{sub 3}{sup −} and ClO{sub 4}{sup −} ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment.

  3. Electrochemical degradation of 17{beta}-estradiol (E2) at boron-doped diamond (Si/BDD) thin film electrode

    Energy Technology Data Exchange (ETDEWEB)

    Murugananthan, M. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)]. E-mail: muruga.chem@gmail.com; Yoshihara, S. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)]. E-mail: sachioy@cc.utsunomiya-u.ac.jp; Rakuma, T. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan); Uehara, N. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan); Shirakashi, T. [Department of Energy and Environmental Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2007-02-15

    Electrochemical degradation of aqueous solutions containing 17{beta}-estradiol (E2), concentrations range of 250-750 {mu}g dm{sup -3}, has been extensively studied using boron-doped diamond (BDD) anode with a working solution volume of 250 ml under galvanostatic control. Cyclic voltammetric experiments were performed to examine the redox response of E2 as a function of cycle number. The effect of operating variables such as initial concentration of E2, applied current density, supporting medium (Na{sub 2}SO{sub 4}, NaNO{sub 3}, and NaCl) and initial pH of the electrolyte (pH 2-10) were systematically examined and discussed. Electrolysis at high anodic potential causes complex oxidation of E2 that leads to form the final sole product as CO{sub 2}. A pseudo first-order kinetics for E2 decay was found against varying applied current density. Also, kinetic analysis suggests that electrooxidation reaction of E2 undergo the control of applied current density. It was observed that electrolyte pH and supporting medium have a vital role on E2 degradation. From a comparison study with other anode materials such as platinum (Pt) and glassy carbon (GC), the superiority of the BDD anode was proved. Total organic carbon results have shown that almost complete mineralization could be accomplished at higher applied current density with specific electrical charge 22.5 x 10{sup -2} A h dm{sup -3}. Mineralization current efficiency was comparatively lower with increasing applied current density.

  4. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Mineralization of secondary effluent by anodic oxidation with BDD anode. • Complete removal of 29 pharmaceuticals and pesticides at trace level concentrations. • Organochlorine and organobromine byproducts were formed at low μM concentrations. • Chlorine species evolution assessed to evaluate the anodic oxidation applicability. - Abstract: Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl− ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl2/HClO/ClO−), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO− species led to the production of ClO3− and ClO4− ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment

  5. Facile Synthesis of Boron-doped Graphene Nanosheets with Hierarchical Microstructure at Atmosphere Pressure for Metal-free Electrochemical Detection of Hydrogen Peroxide

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted -- Highlights: • B-doped graphene nanosheets (BGNs) were used as a catalyst for sensing H2O2. • BGNs were synthesized by an atmospheric-pressure carbothermal reaction. • BGNs with hierarchical microstructure provide more electron transport pathways. • B atoms act as the active sites by transferring charges to neighboring C atoms. • Electrocatalytic ability of BGNs was characterized by a rotating disk electrode. -- Abstract: Hydrogen peroxide (H2O2) is an essential mediator for most of the oxidative biological reactions in enzyme-based biosensor systems, such as glucose oxidase, cholesterol oxidase, and alcohol oxidase. Synthesis of new catalysts to detect the concentration of H2O2 more precisely is indispensable for enzyme-based electrochemical biosensors. In this study, boron-doped graphene nanosheets (BGNs) with 2.2 atomic percentage (at%) boron doping level and a hierarchical microstructure were synthesized by an atmospheric-pressure carbothermal reaction as a noble-metal free catalyst for sensing H2O2. The isolated boron atoms on the BGNs surface act as the electrocatalytic sites by transferring charges to neighbor carbon atoms, and the hierarchical microstructure provides multidimensional electron transport pathways for charge transfer and therefore enhances the electrocatalytic ability. BGNs possess a higher reduction current in the cyclic voltammetry (CV) measurement than that of pristine graphene nanosheets (GNs) over the detection range of 0.0 to 10.0 mM at −0.4 V (vs. Ag/AgCl). The BGNs modified electrochemical sensor shows a linear range from 1.0 to 20.0 mM of H2O2 with a sensitivity of 266.7 ± 3.8 μA mM−1 cm−2 and limit of detection (LOD) of 3.8 μM at a signal-to-noise (S/N) ratio of 3. The beneficial hierarchical microstructure and the synergetic effects arising from doping boron in GNs accomplish the better performance of the BGNs modified electrochemical sensor

  6. On the recombination behaviour of iron in moderately boron-doped p-type silicon

    Science.gov (United States)

    Walz, D.; Joly, J.-P.; Kamarinos, G.

    1996-04-01

    The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level at E v +0.1 eV and the donor level of FeB pairs at E c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014 1016 cm-3 supposing the E c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

  7. In situ fabrication of three-dimensional nitrogen and boron co-doped porous carbon nanofibers for high performance lithium-ion batteries

    Science.gov (United States)

    Zhang, Lijun; Xia, Guanglin; Guo, Zaiping; Sun, Dalin; Li, Xingguo; Yu, Xuebin

    2016-08-01

    This paper reports the fabrication of three-dimensional porous carbon nanofibers network with high doping level of nitrogen (N, 5.17 at.%) and boron (B, 6.87 at.%) through a general electrospinning strategy followed by a calcination process. The employed ammonia borane (NH3BH3, denote as AB) not only functions as a porogen reagent to generate porous structures but also as the heteroatoms source to induce N and B co-doping. Such highly unique nanoarchitectures offer remarkably improved Li storage performance including high reversible capacity (∼910 mAh g-1 at a current density of 100 mA g-1) with good cycling and rate performances.

  8. A First Principles study on Boron-doped Graphene decorated by Ni-Ti-Mg atoms for Enhanced Hydrogen Storage Performance

    Science.gov (United States)

    Nachimuthu, Santhanamoorthi; Lai, Po-Jung; Leggesse, Ermias Girma; Jiang, Jyh-Chiang

    2015-11-01

    We proposed a new solid state material for hydrogen storage, which consists of a combination of both transition and alkaline earth metal atoms decorating a boron-doped graphene surface. Hydrogen adsorption and desorption on this material was investigated using density functional theory calculations. We find that the diffusion barriers for H atom migration and desorption energies are lower than for the previously designed mediums and the proposed medium can reach the gravimetric capacity of ~6.5 wt % hydrogen, which is much higher than the DOE target for the year 2015. Molecular Dynamics simulations show that metal atoms are stably adsorbed on the B doped graphene surface without clustering, which will enhance the hydrogen storage capacity.

  9. Anodic behavior of sertindole and its voltammetric determination in pharmaceuticals and human serum using glassy carbon and boron-doped diamond electrodes

    International Nuclear Information System (INIS)

    The electrochemical oxidation of sertindole was investigated using cyclic, linear sweep voltammetry at a glassy carbon and boron-doped diamond electrodes. The aim of this study was to determine sertindole levels in serum and pharmaceutical formulations, by means of electrochemical methods. In cyclic voltammetry, depending on pH values, sertindole showed one or two irreversible oxidation responses. These two responses were found related to the different electroactive part of the molecule. Using second and sharp oxidation peak, two voltammetric methods were described for the determination of sertindole by differential pulse and square wave voltammetry at the glassy carbon and boron-doped diamond electrodes. Under optimized conditions, the current showed a linear dependence with concentration in the range between 1 x 10-6 and 1 x 10-4 M in acetate buffer at pH 3.5 and between 4 x 10-6 and 1 x 10-4 M in spiked human serum samples for both methods. The repeatability, reproducibility, selectivity, precision and accuracy of all the methods in all media were investigated and calculated. These methods were successfully applied for the analysis of sertindole pharmaceutical dosage forms and human serum samples. No electroactive interferences from the tablet excipients and endogenous substances from biological material were found

  10. Interaction between F2 gas with the pristine and 3C-doped(4, 4 armchair boron phosphide nanotubes: a DFT study

    Directory of Open Access Journals (Sweden)

    M Rezaei-Sameti

    2015-12-01

    Full Text Available In this research, the structure, quantum and NQR (Nuclear quadrupole resonanceparameters of F2 gas adsorption on the pristine and 3C-doped (4,4 armchair models of boron phosphide nanotubes (BPNTs have been investigated in the framework of density functional theory. For this purpose, at the first step, four models for F2 adsorption on the inner and outer surfaces of pristine and 3C-doped BPNTS are considered and then all structures are optimized by using Gaussian 03 program package. The optimized structures are used to calculate the quantum and NQR parameters. The calculated results reveal that the adsorption energy of pristine and 3C-doped models of BPNTs are exothermic and adsorption process is a physisorption process due to the weak Van der Waals interaction. The substitution of three carbons with three B atoms of nanotube decreases significantly the adsorption energies. The F2 adsorption and 3C-doping decrease the band gap, global hardness, and ionization potential of the pristine BPNTs. The calculated NQR parameters of all the models show that CQ and &etaQ values of the first layer are larger than those of the other layers.

  11. The effects of surface oxidation and fluorination of boron-doped diamond anodes on perchlorate formation and organic compound oxidation

    International Nuclear Information System (INIS)

    This research investigated the effects of surface functional groups on both rates of organic compound oxidation (phenol, p-nitrophenol, benzoquinone, and oxalic acid) and perchlorate (ClO4−) formation at boron-doped diamond (BDD) film anodes at 20 °C. X-ray photoelectron spectroscopy measurements determined that various oxygenated functional groups (e.g., C-OH, C=O, COOH) were incorporated on the BDD surface by applying an anodic ageing process, and fluorine functional groups (e.g., C-F, -CnF2n+1) were incorporated by electrochemical oxidation of aqueous perfluorooctanoic acid solutions. Batch oxidation experiments revealed that ClO4− formation via the oxidation of ClO3− was highly variable during anodic ageing, which was attributed to changes in oxygenated functional groups, while organic compound oxidation rates were not significantly affected. The fluorinated electrode showed a lower ClO4− formation rate (19 ± 4 μmoles m−2 min−1) compared to the oxygenated electrode (436 ± 26 μmoles m−2 min−1) indicating the fluorinated surface limits ClO4− production. Measurement of the electrode response to the Fe(CN)63−/4− redox couple using cyclic voltammetry and electrochemical impedance spectroscopy indicated that lower ClO4− formation on the fluorinated electrode was likely a result of dipole-dipole interactions between the negatively charged F atoms and ClO3− and steric hindrance caused by the perfluorocarbon chains. This effect along with the hydrophobicity of the fluorinated electrode resulted in significantly lower ClO4− formation (96% decrease) while slightly enhancing measured oxidation rates of hydrophobic organic compounds. The use of benzoquinone as OH· probe confirmed that the fluorination process did not inhibit OH· production. The rate of benzoquinone oxidation was 2212 ± 183 μmoles m−2 min−1 on the oxygenated electrode and 2926 ± 201 μmoles m−2 min−1 on the fluorinated electrode. Density functional theory

  12. Undoped and boron doped diamond nanoparticles as platinum and platinum-ruthenium catalyst support for direct methanol fuel cell application

    Science.gov (United States)

    La Torre Riveros, Lyda

    Nanoparticular diamond is a promising material that can be used as a robust and chemically stable catalytic support. It has been studied and characterized physically and electrochemically, in its powder and thin film forms. This thesis work intends to demonstrate that undoped diamond nanoparticles (DNPs) and boron-doped diamond nanoparticles (BDDNPs) can be used as an electrode and a catalytic support material for platinum and ruthenium catalysts. The electrochemical properties of diamond nanoparticle electrodes, fabricated using the ink paste method, were investigated. As an initial step, we carried out chemical purification of commercially available undoped DNPs by refluxing in aqueous HNO3 as well as of BDDNPs which were doped through a collaborative work with the University of Missouri. The purified material was characterized by spectroscopic and surface science techniques. The reversibility of reactions such as ferricyanide/ferrocyanide (Fe(CN) 63-/Fe(CN)64-) and hexaamineruthenium (III) chloride complexes as redox probes were evaluated by cyclic voltammetry at the undoped DNPs and BDDNPs surface. These redox probes showed limited peak currents and presented linear relationships between current (i) and the square root of the potential scan rate (v1/2). However, compared to conventional electrodes, the peak currents were smaller. BDDNPs show an improvement in charge transfer currents when compared to undoped DNPs. Platinum and ruthenium nanoparticles were chemically deposited on undoped DNPs and BDDNPs through the use of the excess of a mild reducing agent such NaBH4. In order to improve the nanoparticle dispersion sodium dodecyl benzene sulfonate (SDBS), a surfactant agent, was used. Percentages of platinum and ruthenium metals were varied as well as the stoichiometric amount of the reducing agent to determine adequate parameters for optimum performance in methanol oxidation. Both before and after the reducing process the samples were characterized by scanning

  13. Application of a boron doped diamond (BDD) electrode as an anode for the electrolytic reduction of UO{sub 2} in Li{sub 2}O-LiCl-KCl molten salt

    Energy Technology Data Exchange (ETDEWEB)

    Park, Wooshin, E-mail: wooshin@kaeri.re.kr [Nuclear Fuel Cycle Process Development Division, Korea Atomic Energy Research Institute (KAERI), 111, 989 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Kim, Jong-Kook; Hur, Jin-Mok; Choi, Eun-Young; Im, Hun Suk; Hong, Sun-Seok [Nuclear Fuel Cycle Process Development Division, Korea Atomic Energy Research Institute (KAERI), 111, 989 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of)

    2013-01-15

    A boron doped diamond thin film electrode was employed as an inert anode to replace a platinum electrode in a conventional electrolytic reduction process for UO{sub 2} reduction in Li{sub 2}O-LiCl molten salt at 650 Degree-Sign C. The molten salt was changed into Li{sub 2}O-LiCl-KCl to decrease the operation temperature to 550 Degree-Sign C at which the boron doped diamond was chemically stable. The potential for oxygen evolution on the boron doped diamond electrode was determined to be approximately 2.2 V vs. a Li-Pb reference electrode whereas that for Li deposition was around -0.58 V. The density of the anodic current was low compared to that of the cathodic current. Thus the potential of the cathode might not reach the potential for Li deposition if the surface area of the cathode is too wide compared to that of the anode. Therefore, the ratio of the surface areas of the cathode and anode should be precisely controlled. Because the reduction of UO{sub 2} is dependent on the reaction with Li, the deposition of Li is a prerequisite in the reduction process. In a consecutive reduction run, it was proved that the boron doped diamond could be employed as an inert anode.

  14. Pulsed Amperometry for Anti-fouling of Boron-doped Diamond in Electroanalysis of β-Agonists: Application to Flow Injection for Pharmaceutical Analysis

    Directory of Open Access Journals (Sweden)

    Duangjai Nacapricha

    2006-01-01

    Full Text Available This work presents the construction and application of boron-doped diamond(BDD thin film electrode as sensor for the determination of three β-agonists, viz.salbutamol, terbutaline and clenbuterol. Although well-known as a chemically inertmaterial, BDD film however shows fouling in detection of these compounds using fixedpotentialmode amperometry. A suitable waveform for pulsed amperometric detection(PAD was developed and used to determine the agonist compounds. It was seen that thedeveloped PAD significantly refreshed the BDD surface for long-term detection in flowinjection analysis. Linear working ranges were 0.5-100 μM, 1.0-100 μM and 0.5-50 μM forsalbutamol, terbutaline and clenbuterol, respectively. The developed PAD-BDD system wasapplied to successfully determine salbutamol and terbutaline in commercial pharmaceuticalproducts. The methods were validated with a capillary electrophoresis method.

  15. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2012-07-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  16. Direct assessment of the mechanical modulus of graphene co-doped with low concentrations of boron-nitrogen by a non-contact approach

    Science.gov (United States)

    Pan, Shun-Hsien; Medina, Henry; Wang, Sheng-Bo; Chou, Li-Jen; Wang, Zhiming M.; Chen, Kuei-Hsien; Chen, Li-Chyong; Chueh, Yu-Lun

    2014-07-01

    Boron and nitrogen co-doping has been shown to be an effective way to induce a band gap in graphene for electrical applications but only a few theoretical studies have been done to understand the elastic and mechanical properties of the modified graphene. Until now, no experimental assessment of the mechanical modulus of boron-nitrogen-doped graphene (BNG) has been reported in the literature. Here, we demonstrate a novel non-contact approach to determine the in-plane stiffness of BNG at low BN concentrations. The in-plane stiffness of BNG with 2 at% BN concentration was estimated to be about 309 N m-1, which is lower than that of pristine graphene, in good agreement with some theoretical studies. Moreover, we correlated the conductivity of BNG with induced strain and found the BNG to be more sensitive than pristine graphene in response to externally applied strain. This result indicates that BNG is a more suitable material than graphene for strain sensor applications.Boron and nitrogen co-doping has been shown to be an effective way to induce a band gap in graphene for electrical applications but only a few theoretical studies have been done to understand the elastic and mechanical properties of the modified graphene. Until now, no experimental assessment of the mechanical modulus of boron-nitrogen-doped graphene (BNG) has been reported in the literature. Here, we demonstrate a novel non-contact approach to determine the in-plane stiffness of BNG at low BN concentrations. The in-plane stiffness of BNG with 2 at% BN concentration was estimated to be about 309 N m-1, which is lower than that of pristine graphene, in good agreement with some theoretical studies. Moreover, we correlated the conductivity of BNG with induced strain and found the BNG to be more sensitive than pristine graphene in response to externally applied strain. This result indicates that BNG is a more suitable material than graphene for strain sensor applications. Electronic supplementary

  17. Electrochemical oxidation of vinasses using a boron doped diamond electrode; Degradacao eletroquimica da vinhaca usando eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Batista, Eveline Cristine; Oliveira, Robson Tadeu Soares de, E-mail: robson@icbn.uftm.edu.br [Universidade Federal do Triangulo Mineiro, Uberaba, MG (Brazil). Inst. de Ciencias Biologicas e Naturais; Ferreira, Rafael de Queiroz [Universidade Federal do Espirito Santo (UFES), Vitoria, ES (Brazil). Dept. de Quimica; Miwa, Douglas [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Quimica; Santos, Mauro Coelho dos [Universidade Federal do ABC, Santo Andre, SP (Brazil)

    2011-07-01

    The degradation of vinasses in aqueous solution from ethanol industry has been investigated by electrochemical oxidation using a boron doped diamond electrode (BDD). Samples of vinasses were electrolysed in medium of (0.1 mol L-1) Na{sub 2}SO{sub 4} solutions at controlled potentials of +2.4, +3.0 and +4.0 V (vs. Ag/AgCl) and exhibited considerable reduction of total organic carbon. The cyclic voltammetry studies indicate that the vinasses are oxidized irreversibly over the BDD at 2.0 V (vs. Ag/AgCl) in diffusion controlled process. From the experimental results it is clear that the BDD electrode can be a valuable tool to the electrochemical degradation of vinasses in practical applications. (author)

  18. Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

    International Nuclear Information System (INIS)

    Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10−3 Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp3 C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling

  19. High-sensitivity non-enzymatic glucose biosensor based on Cu(OH){sub 2} nanoflower electrode covered with boron-doped nanocrystalline diamond layer

    Energy Technology Data Exchange (ETDEWEB)

    Sim, Huijun [Department of Chemical and Biological Engineering, Korea University, 1, 5-Ga, Anam-dong, Sungbuk-ku, Seoul 136-713 (Korea, Republic of); Kim, Jong-Hoon; Lee, Seung-Koo; Song, Min-Jung [School of Material and Science Engineering, Korea University, 1, 5-Ga, Anam-dong, Sungbuk-ku, Seoul 136-713 (Korea, Republic of); Yoon, Dong-Hwa [Department of Chemical and Biological Engineering, Korea University, 1, 5-Ga, Anam-dong, Sungbuk-ku, Seoul 136-713 (Korea, Republic of); Lim, Dae-Soon [School of Material and Science Engineering, Korea University, 1, 5-Ga, Anam-dong, Sungbuk-ku, Seoul 136-713 (Korea, Republic of); Hong, Suk-In, E-mail: sihong@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, 1, 5-Ga, Anam-dong, Sungbuk-ku, Seoul 136-713 (Korea, Republic of)

    2012-10-01

    A non-enzymatic biosensor was developed using boron-doped nanocrystalline diamond (BDND) based on a Cu electrode with Cu(OH){sub 2} dendritic architecture. The Cu(OH){sub 2} nanoflower electrode was covered with a BDND layer using an electrostatic self-assembly seeding method with nanodiamond particles and hot-filament chemical vapor deposition. X-ray diffraction and Raman spectral analysis confirmed that the BDND nanoflower electrode was synthesized onto Cu(OH){sub 2} nanoflowers. Field-emission scanning electron microscope images showed that the fabricated electrodes were nanoflowers possessing large surface areas. From cyclic voltammetry, the peak currents of an BDND/Cu(OH){sub 2}/Cu electrode was about 7, 6.2, and 5.9 times higher than that of the Cu foil, Cu(OH){sub 2}/Cu, and BDND/Cu electrodes, respectively. A biosensor based on BDND/Cu(OH){sub 2}/Cu exhibited excellent performance for glucose detection, and it had a linear detection range of 0 to 6 mM, a correlation coefficient of 0.9994, a low detection limit of 9 {mu}M, and a high sensitivity of 2.1592 mA mM{sup -1} cm{sup -1}. - Highlights: Black-Right-Pointing-Pointer Deposition of boron-doped nanocrystalline diamond on Cu(OH){sub 2} nanoflowers Black-Right-Pointing-Pointer Damage-free seeding process using electrostatic self-assembly seeding method Black-Right-Pointing-Pointer Non-enzymatic glucose sensor with high sensitivity of 2.1592 mA mM{sup -1} cm{sup -1}.

  20. Fatigue cracks in Eurofer 97 steel: Part II. Comparison of small and long fatigue crack growth

    Czech Academy of Sciences Publication Activity Database

    Kruml, Tomáš; Hutař, Pavel; Náhlík, Luboš; Seitl, Stanislav; Polák, Jaroslav

    2011-01-01

    Roč. 412, 1 (2011), s. 7-12. ISSN 0022-3115 R&D Projects: GA ČR GA106/09/1954; GA ČR GA101/09/0867 Institutional research plan: CEZ:AV0Z20410507 Keywords : ferritic-martensitic steel * long crack growth * small crack growth * crack closure Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.052, year: 2011

  1. Microstructure evolution during cyclic tests on EUROFER 97 at room temperature. TEM observation and modelling

    Czech Academy of Sciences Publication Activity Database

    Giordana, M. F.; Giroux, P. F.; Alvarez; Armas, I.; Sauzay, M.; Armas, A.; Kruml, Tomáš

    2012-01-01

    Roč. 550, JUL (2012), s. 103-111. ISSN 0921-5093 Institutional support: RVO:68081723 Keywords : martensitic steels * softening behaviour * microstructural evolution * modelling Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.108, year: 2012

  2. Fatigue cracks in Eurofer 97 steel: Part I. Nucleation and small crack growth kinetics

    Czech Academy of Sciences Publication Activity Database

    Kruml, Tomáš; Polák, Jaroslav

    2011-01-01

    Roč. 412, 1 (2011), s. 2-6. ISSN 0022-3115 R&D Projects: GA ČR GA106/09/1954; GA ČR GA101/09/0867 Institutional research plan: CEZ:AV0Z20410507 Keywords : ferritic-martensitic steel * low cycle fatigue * small crack growth * fatigue life prediction Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.052, year: 2011

  3. Welding state of art for Eurofer 97 application to Tritium Blanket Module for ITER Reactor

    International Nuclear Information System (INIS)

    Full text of publication follows: Eurofer weldability must be established for data base assessment and TBM manufacturing support. Electron Beam, Hybrid (Laser combined with MIG/MAG), Laser and Narrow Gap TIG processes have been carried out on Eurofer samples from 0.5 mm to 40 mm. Electron Beam produces very narrow fusion zone width, in the range of 3 to 4 mm, that yields brittle joints with (5-ferrite. This process is considered only for low penetration depth (cooling plates). The other processes produce similar results, with attenuation or enhanced effects, depending on cooling rates and weld penetration depth. Pre- and post-heating have been applied on hybrid and laser welds. High hardness values, increasing brittleness and softening effects in the Heat Affected Zone are observed for each welding configuration that could signal creep problems. The Fusion Zones are typically composed of martensite laths, with small grain sizes. In the Heat Affected Zones, martensite grains are observed with M23C6 carbide precipitation. Delta ferrite has been observed only in Electron Beam welds, due to very high cooling rate during the solidification phase, related to strong enhanced weld shape. Eurofer filler wire with optimized chemical composition is developed for producing welds with good properties. To restore properties after welding, PWHT seems is necessary and several treatments including one at 750 deg. C for 2 hours have been performed. Also tries is a re-austenisation treatment of 10 h at 1050 deg. C. affecting order to improve results, pre- and post-heating has been applied. The heating produced by the resistive heater was too low, and new welding tests are planned at higher temperatures (400 deg. C). However, the pre- and post-heating at higher temperatures will complicate manufacturing of TBM clamping For penetration depths below 10 mm, laser process is the reference method and TIG second. Distortion level performed by laser process is acceptable for manufacturing stage. For TIG and laser processes, no metallurgical defect or damage has been observed. HAZ and Fusion Zones are larger in TIG welds compared with laser welds. Six TIG welding passes are necessary, compared to the two passes for laser process. For laser and Hybrid (MIG/Laser) welding process, joint coefficient can be considered as 1. All tensile specimens have broken outside the welds, and in the parent base material. For laser welds, tempering Post Welding Heat Treatment has markedly reduced the hardening level in fusion zone, to acceptable values in the range of 300 HV 10. Impact tests have shown good results. Welding simulation has been carried out, and numerical martensitic weld width is close to real one. (authors)

  4. Effects of heat treatment conditions on the microstructure and impact properties of EUROFER 97 ODS steel

    International Nuclear Information System (INIS)

    Probably the most important range of materials to consider for the blanket material in the tokamak design for fusion reactors such as ITER and DEMO is the high alloy Fe9Cr oxide dispersion strengthened (ODS) ferritic steels. These steels possess exceptional thermal conductivity and low thermal expansion while being strongly resistant to void swelling. Their main drawback is the high ductile-to-brittle transition temperature (DBTT), particularly in the ODS versions of the material. This paper describes attempts that are being made to reduce this DBTT in as yet unirradiated materials by a novel heat treatment procedure. The principle behind this approach is that low DBTT in the unirradiated materials will lead to relatively low DBTT even in He-containing material that has been irradiated with fusion blanket-type irradiations. New batches of high alloy Fe9Cr ODS (EUROFER) ferritic steel have been produced by a powder metallurgical route, and relatively homogeneous material has been produced by a hot isostatic pressing procedure. Mini-Charpy test specimens were made from materials that had been subjected to a matrix of heat treatments designed to show up variations in solution treatment (ST) temperature, cooling rate from the ST temperature and tempering treatment. The initial DBTT was in the range 150-200 °C. Extremely interesting results have been obtained. DBTT downward shifts of up to 200 °C have been observed by using a high 1300 °C ST temperature and a low cooling rate. The paper goes on to describe the microstructure of this material, and discusses the possible microstructural factors needed to produce these very high DBTT downward shifts. Low dissolved carbon and higher proportions of low-angle grain boundaries seem to provide the key to the understanding of the alloy behaviour.

  5. Effect of thermal ageing on the impact fracture behaviour of Eurofer'97 steel

    Czech Academy of Sciences Publication Activity Database

    Hadraba, Hynek; Dlouhý, Ivo

    386-388, - (2009), s. 564-568. ISSN 0022-3115 R&D Projects: GA AV ČR IAA200410502; GA ČR GA106/08/1397 Institutional research plan: CEZ:AV0Z20410507 Keywords : brittleness * fracture * cracks Subject RIV: JG - Metallurgy Impact factor: 1.933, year: 2009

  6. Effect of nitrogen as co-dopant in carbon and boron-doped ZnO clusters

    Science.gov (United States)

    Kapila, Neha; Sharma, Gaurav; Mudahar, Isha; Sharma, Hitesh

    2016-05-01

    The effect of N as co-dopant have been investigated on magnetic properties of C and B-doped (ZnO)n clusters (n = 1 - 16) using spin-polarized density functional theory. Total energy calculations show that C and N more stable when substituted at O site, whereas B is more stable at the Zn site. The B:N co-doping is energetically more stable than C:N which is more stable than N:N doping. C and N atoms do not show tendency to form clusters when doped separately. The magnetic moment (MM) of C-doped ZnO clusters is enhanced significantly with N co-doping. The MM of 2 μB, 1 μB and 1 μB per atom is induced due to C, N and B respectively. The MM of 3 μB or 5 μB and 2 μB or 4 μB are observed for co-doping of 2C:N and C:2N respectively. In contrary, the MM in 2B:N and B:2N co-doped (ZnO)n remains 1 μB for n=2-4, 12 and 16. The results are in agreement with the available theoretical results.

  7. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  8. Preparation of extremely smooth and boron-fluorine co-doped TiO2 nanotube arrays with enhanced photoelectrochemical and photocatalytic performance

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Highly ordered TNTs are prepared by first using NH4BF4 based electrolyte. • Ripple-free tube walls are obtained due to the mildness of the BF4–. • B, F originate from the decomposition of BF4–are co-doped into BF-TNTs. • BF-TNTs exhibit better PEC and PC performance than those of TNTs. - Abstract: Highly ordered TiO2 nanotube arrays (BF-TNTs) are prepared by anodization method in the unique NH4BF4 based electrolyte. The results show that the tube walls of the BF-TNTs, by first using NH4BF4 based electrolyte, are much smoother than that of TiO2 nanotube arrays (F-TNTs) fabricated with a conventional fluoride containing electrolyte. In the NH4BF4 electrolyte, boron and fluorine elements are simultaneously doped into the obtained BF-TNTs during the anodization process. The BF-TNTs exhibit better photoelectrochemical (PEC) properties and photocatalytic (PC) performance than those of F-TNTs

  9. P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering

    Science.gov (United States)

    Ohmura, Y.; Takahashi, M.; Suzuki, M.; Sakamoto, N.; Meguro, T.

    2001-12-01

    B has been successfully doped into the hydrogenated amorphous Si films without using explosive and/or toxic gases SiH 4 or B 2H 6 by reactive radio-frequency co-sputtering. The target used for co-sputtering was a composite target composed of a B-doped Si wafer and B chips attached on the Si wafer with silver powder bond. The maximum area fraction of B chips used was 0.11. Argon and hydrogen pressures were 5×10 -3 and 5×10 -4 Torr, respectively. Substrates were kept at 200°C or 250°C during sputtering. The maximum B concentration in the film obtained was 2×10 19 cm -3 from secondary ion mass spectroscopy measurement. Films with resistivity of 10 4-10 5 Ω cm were obtained, which was low for the above acceptor concentration, compared with other group III impurities doping, indicating the high doping efficiency of B. A heterostructure, which was prepared by co-sputtering these B-doped films on an n-type crystalline Si, shows a good rectification characteristic. A small photovoltaic effect is also observed.

  10. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

    Science.gov (United States)

    Suplinskas, Raymond J.; Finnemore, Douglas; Bud'ko, Serquei; Canfield, Paul

    2007-11-13

    A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

  11. Indirect Voltammetric Sensing Platforms For Fluoride Detection on Boron-Doped Diamond Electrode Mediated via [FeF6]3− and [CeF6]2− Complexes Formation

    International Nuclear Information System (INIS)

    Very simple and sensitive electroanalytical technique based on synergistic combination of reaction electrochemistry (specificity) and bare boron-doped diamond electrode (sensitivity) for the detection of fluorides in drinking water was developed as variant based on dynamic electrochemistry to ISE analysis. It is based on the formation of electroinactive fluoride complexes with Fe(III) and Ce(IV) ions decreasing such diffusion current of free metal on boron-doped diamond electrode. Due to low background signal of boron-doped diamond electrode reasonably low detection limits of the order of 10−6 mol L−1 for linear sweep voltammetric method using formation of [FeF6]3− and 10−7 mol L−1 in a square-wave variant of this technique have been achieved. This is approximately 1–2 orders lower than in the case of platinum comb-shaped interdigitated microelectrode array. Linear sweep voltammetric method based on [CeF6]2− complex formation has lower sensitivity and may be suitable for samples with higher content of fluoride and not to analysis of drinking water

  12. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    Science.gov (United States)

    Wang, C. L.; Liu, J.; Mudryk, Y.; Gschneidner, K. A.; Long, Y.; Pecharsky, V. K.

    2016-05-01

    The magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. However, the relative cooling power (RCP) of DyCo2 and the B doped alloys remains nearly constant.

  13. Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

    Czech Academy of Sciences Publication Activity Database

    Grausová, Ľubica; Kromka, Alexander; Burdíková, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacík, Jiří; Haenen, K.; Lisá, Věra; Bačáková, Lucie

    2011-01-01

    Roč. 6, č. 6 (2011), e20943. E-ISSN 1932-6203 R&D Projects: GA AV ČR(CZ) KAN400480701; GA AV ČR(CZ) IAAX00100902; GA ČR(CZ) GAP108/11/0794 Grant ostatní: GA AV ČR(CZ) KAN400100701 Institutional research plan: CEZ:AV0Z50110509; CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : osteoblast-like cells * boron * NCD films Subject RIV: EI - Biotechnology ; Bionics Impact factor: 4.092, year: 2011

  14. Highly conducting and preferred oriented boron doped nc-Si films for window layers in nc-Si solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2016-05-01

    Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B2H6) as the dopant gas. High magnitudeof electrical conductivity (~102 S cm-1) andorientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc-Si solar cells.

  15. Effect of zinc oxide and boron oxide addition on the properties of yttrium-doped barium zirconate

    International Nuclear Information System (INIS)

    BaZr0.8Y0.2O3-δ protonic conductors, prepared by the ceramic route, were pressed and sintered with ZnO and B2O3 sinter ing aids. The sintered pellets were analyzed by X-ray diffraction and impedance spectroscopy. Polished and thermally etched surfaces of the pellets were observed in a scanning probe microscope. The highest values of apparent density, 95%T.D., were obtained with 2 and 5 wt.% ZnO. The lowest value of electrical resistivity was obtained in BaZr0.8Y0.2O3-δ compounds with 5 wt.% ZnO. Boron oxide and zinc oxide sinter ing aids were efficient to improve the apparent density as well as the electrical conductivity of BaZr0.8Y0.2O3-δ protonic conductors. (author)

  16. Electrochemical treatment of phenolic waters in presence of chloride with boron-doped diamond (BDD) anodes: Experimental study and mathematical model

    International Nuclear Information System (INIS)

    This work deals with an experimental and numerical study on the electrochemical treatment of waters containing phenolic compounds with boron-doped diamond (BDD) anodes. Anodic oxidation of m-cresol, as a model of phenolic compound, was investigated by galvanostatic electrolyses. The electrolyses were carried out under different experimental conditions by using an impinging-jet flow cell inserted in a hydraulic circuit in a closed loop. On the basis of the experimental results a mathematical model was implemented to simulate the effect of the chemistry of organic compounds and solution on the process, in particular the effect of chlorides on the kinetics of m-cresol oxidation. The effect of hydrodynamics of the cell on the mass transfer towards the electrode surface was also considered. The model was validated through comparison with experimental data: the results showed that the proposed model well interpreted the complex effect on removal efficiency of such operative parameters as current density, hydrodynamic of the reactor and chemistry of the solution. The model predictions were utilised to obtain quantitative information on the reaction mechanism, as well as to predict the performance of the process under different operative conditions, by calculating some relevant figures of merit.

  17. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density JSC = 10.62 mA/cm2, open-circuit voltage VOC = 0.93 V and fill factor = 64%).

  18. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  19. Methanol and ethanol electro-oxidation on Pt-SnO2 and Pt-Ta2O5 sol-gel-modified boron-doped diamond surfaces

    International Nuclear Information System (INIS)

    The search for more efficient anode catalyst than platinum to be used in direct alcohol fuel cell systems is an important challenge. In this study, boron-doped diamond film surfaces were modified with Pt, Pt-SnO2 and Pt-Ta2O5 nano-crystalline deposits by the sol-gel method to study the methanol and ethanol electro-oxidation reactions in acidic medium. Electrochemical experiments carried out in steady-state conditions demonstrate that the addition of SnO2 to Pt produces a very reactive electrocatalyst that possibly adsorbs and/or dissociate ethanol more efficiently than pure Pt changing the onset potential of the reaction by 190 mV toward less positive potentials. Furthermore, the addition of Ta2O5 to Pt enhances the catalytic activity toward the methanol oxidation resulting in a negative shift of the onset potential of 170 mV. These synergic effects indicate that the addition of these co-catalysts inhibits the poisoning effect caused by strongly adsorbed intermediary species. Since the SnO2 catalyst was more efficient for ethanol oxidation, it could probably facilitate the cleavage of the C-C bond of the adsorbed intermediate fragments of the reaction.

  20. Demonstration Of Electrochemical Oxidation Of Oils Using Boron-Doped Diamond Electrodes And Its Potential Role In The Disposal Of Radioactively Contaminated Waste Lubricants

    International Nuclear Information System (INIS)

    Electrochemical oxidation using a boron-doped diamond (BDD) anode is being investigated as a possible method for treating radiologically-contaminated oils. It has the potential to oxidise oils to carbon dioxide and water, and it would be particularly beneficial for oils contaminated with plutonium. It was found that simultaneous application of sonication and electro-oxidation produced and maintained an oil emulsion, so enabling its oxidation. This treatment was shown to be effective with 3 different oils: an unused hydraulic oil, an unused vacuum pump oil and a waste used machine tool oil, although the addition of a small amount of surfactant was required for the effective emulsification and oxidation of the vacuum pump oil. Essentially complete oxidation of the hydraulic oil in the absence of other organic material was demonstrated. The rate of oxidation appeared to be limited by the applied current when the concentration of oil was high and the current was low. Similarly, it was limited by the oil concentration when the concentration of oil was low and the current was relatively high. The required scale-up from a laboratory electrochemical cell is estimated to be 10,000 fold, which could entail a cell with a total BDD surface area of 3 m2, drawing a current of about 2000 A. It is anticipated that it should be possible to minimise the size of the cell by optimisation during the design of the prototype equipment. (authors)

  1. Ag Nanoparticles on Boron Doped Multi-walled Carbon Nanotubes as a Synergistic Catalysts for Oxygen Reduction Reaction in Alkaline Media

    International Nuclear Information System (INIS)

    Highlights: • The mass activity of Ag/B-MWCNTs reduces with increasing of Ag loading. • The B-MWCNTs can be a promising supporting material for low-cost ORR catalyst. • This work the role of supporting materials in reducing the loading of metal catalyst. - Abstract: Here we report the oxygen reduction reaction (ORR) activity of Ag nanoparticles supported on boron doped multi-walled carbon nanotubes (Ag/B-MWCNTs) with different Ag loadings synthesized by a facile chemical method. Transmission electron microscopy (TEM) and X-ray diffraction patterns (XRD) measurements were employed to investigate the morphology and crystal structure of the as-prepared catalysts. The electrochemical results demonstrated that all the Ag/B-MWCNTs samples catalyzed the ORR in alkaline media by an efficient four-electron pathway. Furthermore, Ag/B-MWCNTs with lowest Ag loading (20%) performed the highest mass activity towards ORR mainly due to the synergistic effect of Ag nanoparticles and B-MWCNTs. This work brings insight into the role of supporting materials in reducing the loading of metal catalyst towards low-cost ORR in alkaline media

  2. In situ control of local pH using a boron doped diamond ring disk electrode: optimizing heavy metal (mercury) detection.

    Science.gov (United States)

    Read, Tania L; Bitziou, Eleni; Joseph, Maxim B; Macpherson, Julie V

    2014-01-01

    A novel electrochemical approach to modifying aqueous solution pH in the vicinity of a detector electrode in order to optimize the electrochemical measurement signal is described. A ring disk electrode was employed where electrochemical decomposition of water on the ring was used to generate a flux of protons which adjusts the local pH controllably and quantifiably at the disk. Boron doped diamond (BDD) functioned as the electrode material given the stability of this electrode surface especially when applying high potentials (to electrolyze water) for significant periods of time. A pH sensitive iridium oxide electrode electrodeposited on the disk electrode demonstrated that applied positive currents on the BDD ring, up to +50 μA, resulted in a local pH decrease of over 4 orders of magnitude, which remained stable over the measurement time of 600 s. pH generation experiments were found to be in close agreement with finite element simulations. The dual electrode arrangement was used to significantly improve the stripping peak signature for Hg in close to neutral conditions by the generation of pH = 2.0, locally. With the ability to create a localized pH change electrochemically in the vicinity of the detector electrode, this system could provide a simple method for optimized analysis at the source, e.g., river and sea waters. PMID:24321045

  3. Comparative study of long-period gratings written in a boron co-doped fiber by an electric arc and UV irradiation

    International Nuclear Information System (INIS)

    The paper presents for the first time a comparative study of long-period gratings (LPGs) written by point-by-point UV irradiation and by electrical arc discharges. These gratings were inscribed in a highly photosensitive boron co-doped fiber that can be considered as a suitable platform for LPG writing using either technology. The experimental transmission data for the manufactured LPG devices fit well when compared to the simulations we carried out in parallel. As a result of each of these writing processes, we were able to obtain a remarkably good quality of grating. Two reasons could explain the observed small differences between the spectra: a slight mismatch of the period of the gratings and an unintentional tapering of the fiber during the arc-based processes. We also found that the UV irradiation at λ = 248 nm can cause clearly visible damage to the fiber's surface. As a result of the UV writing, a coupling to the asymmetrical cladding modes can take place. Moreover, the gratings written using the two technologies show a very similar refractive index and temperature-sensing properties. The only differences between them can come from a physical deformation of the fiber induced by the electric arc discharges

  4. The improvement of boron-doped diamond anode system in electrochemical degradation of p-nitrophenol by zero-valent iron

    International Nuclear Information System (INIS)

    Boron-doped diamond (BDD) electrodes are promising anode materials in electrochemical treatment of wastewaters containing bio-refractory organic compounds due to their strong oxidation capability and remarkable corrosion stability. In order to further improve the performance of BDD anode system, electrochemical degradation of p-nitrophenol were initially investigated at the BDD anode in the presence of zero-valent iron (ZVI). The results showed that under acidic condition, the performance of BDD anode system containing zero-valent iron (BDD-ZVI system) could be improved with the joint actions of electrochemical oxidation at the BDD anode (39.1%), Fenton's reaction (28.5%), oxidation–reduction at zero-valent iron (17.8%) and coagulation of iron hydroxides (14.6%). Moreover, it was found that under alkaline condition the performance of BDD-ZVI system was significantly enhanced, mainly due to the accelerated release of Fe(II) ions from ZVI and the enhanced oxidation of Fe(II) ions. The dissolved oxygen concentration was significantly reduced by reduction at the cathode, and consequently zero-valent iron corroded to Fe(II) ions in anaerobic highly alkaline environments. Furthermore, the oxidation of released Fe(II) ions to Fe(III) ions and high-valent iron species (e.g., FeO2+, FeO42−) was enhanced by direct electrochemical oxidation at BDD anode.

  5. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  6. Density functional theory and molecular dynamic studies of hydrogen interaction with plasma-facing graphite surfaces and the impact of boron doping

    International Nuclear Information System (INIS)

    The main drawback of carbon is its strong chemical reactivity to hydrogen isotopes (H/D/T), which leads to chemical erosion/redeposition mechanisms in carbon-lined fusion devices. Computer modeling of tritium retention in carbon requires reflection probability for atomic and molecular species and energy distribution for reflected molecules. In this paper we present first-principle density functional theory (DFT) potential energy surfaces (PES) and molecular dynamic (MD) results concerning the adsorption, diffusion and recombination of atomic hydrogen on the basal terraces and edges of terraces of graphite and on boron-doped graphite. We have shown the important coherence and complementarities between PES and dynamic calculation to model H graphite interaction. Our results are in good agreement with experiment and provide new insights into the mechanism of retention, diffusion and recombination of H on graphite layers. The impact of impurities and defects has also been investigated. The general effect is to increase graphite reactivity toward H. These effects have been quantified and mechanisms (or the way they are modified) have been proposed. (A.C.)

  7. Study of degradation intermediates formed during electrochemical oxidation of pesticide residue 2,6-dichlorobenzamide (BAM) at boron doped diamond (BDD) and platinum-iridium anodes.

    Science.gov (United States)

    Madsen, Henrik Tækker; Søgaard, Erik Gydesen; Muff, Jens

    2014-08-01

    Electrochemical oxidation is a promising technique for degradation of otherwise recalcitrant organic micropollutants in waters. In this study, the applicability of electrochemical oxidation was investigated concerning the degradation of the groundwater pollutant 2,6-dichlorobenzamide (BAM) through the electrochemical oxygen transfer process with two anode materials: Ti/Pt90-Ir10 and boron doped diamond (Si/BDD). Besides the efficiency of the degradation of the main pollutant, it is also of outmost importance to control the formation and fate of stable degradation intermediates. These were investigated quantitatively with HPLC-MS and TOC measurements and qualitatively with a combined HPLC-UV and HPLC-MS protocol. 2,6-Dichlorobenzamide was found to be degraded most efficiently by the BDD cell, which also resulted in significantly lower amounts of intermediates formed during the process. The anodic degradation pathway was found to occur via substitution of hydroxyl groups until ring cleavage leading to carboxylic acids. For the BDD cell, there was a parallel cathodic degradation pathway that occurred via dechlorination. The combination of TOC with the combined HPLC-UV/MS was found to be a powerful method for determining the amount and nature of degradation intermediates. PMID:24873711

  8. Photoassisted electrochemical recirculation system with boron-doped diamond anode and carbon nanotubes containing cathode for degradation of a model azo dye

    International Nuclear Information System (INIS)

    In this research work, a photoassisted electrochemical system under recirculation mode and with UV irradiation was designed for treatment of C.I. Acid Blue 92 (AB92) as a model anionic azo dye in aqueous solution. Degradation experiments were carried out with boron-doped diamond (BDD) anode and carbon nanotubes-polytetrafluoroethylene (CNTs-PTFE) cathode in the presence of sulfate as an electrolyte. A comparative study of AB92 degradation by photolysis, electrochemical oxidation and photoassisted electrochemical processes after 45 min of treatment demonstrated that degradation efficiency was 27.89, 37.65 and 95.86%, respectively. Experimental data revealed that the degradation rate of AB92 in all of the processes obeyed pseudo-first-order kinetics and application of photoassisted electrochemical system reduced electrical energy per order (EEO), considerably. Degradation efficiency of photoassisted electrochemical process enhanced by increasing applied current and flow rate values, but vice versa trend was observed for initial dye concentration and an optimum amount of 6 was obtained for initial pH. The TOC measurement results demonstrated that 93.24% of organic substrates were mineralized after 120 min of photoassisted electrochemical process and GC–Mass analysis was performed for identification of degradation intermediates

  9. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    Energy Technology Data Exchange (ETDEWEB)

    Venta, J. de la, E-mail: jdelaventa@physics.ucsd.edu [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Basaran, Ali C. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Materials Science and Engineering, University of California, La Jolla, San Diego, CA 92093 (United States); Grant, T. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Gallardo-Amores, J.M. [Departamento de Quimica Inorganica I, Universidad Complutense, E-28040 Madrid (Spain); Ramirez, J.G. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Alario-Franco, M.A. [Departamento de Quimica Inorganica I, Universidad Complutense, E-28040 Madrid (Spain); Fisk, Z. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Schuller, Ivan K. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States)

    2013-08-15

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr{sub 3}Si{sub 2} phase. - Highlights: • Study of the Pr–Si system using HP–HT or doping with C and B. • New magnetic phases in the Pr–Si system doped with C. • Confirmation of the existence of the Pr{sub 3}Si{sub 2} phase.

  10. Theoretical Modelling and Facile Synthesis of a Highly Active Boron-Doped Palladium Catalyst for the Oxygen Reduction Reaction.

    Science.gov (United States)

    Vo Doan, Tat Thang; Wang, Jingbo; Poon, Kee Chun; Tan, Desmond C L; Khezri, Bahareh; Webster, Richard D; Su, Haibin; Sato, Hirotaka

    2016-06-01

    A highly active alternative to Pt electrocatalysts for the oxygen reduction reaction (ORR), which is the cathode-electrode reaction of fuel cells, is sought for higher fuel-cell performance. Our theoretical modelling reveals that B-doped Pd (Pd-B) weakens the absorption of ORR intermediates with nearly optimal binding energy by lowering the barrier associated with O2 dissociation, suggesting Pd-B should be highly active for ORR. In fact, Pd-B, facile synthesized by an electroless deposition process, exhibits 2.2 times and 8.8 times higher specific activity and 14 times and 35 times less costly than commercial pure Pd and Pt catalysts, respectively. Another computational result is that the surface core level of Pd is negatively shifted by B doping, as confirmed by XPS, and implies that filling the density of states related to the anti-bonding of oxygen to Pd surfaces with excess electrons from B doping, weakens the O bonding to Pd and boosts the catalytic activity. PMID:27086729

  11. Micro Extrinsic Fiber-Optic Fabry-Perot Interferometric Sensor Based on Erbium- and Boron-Doped Fibers

    International Nuclear Information System (INIS)

    Micro extrinsic Fabry–Perot interferometers (MEFPIs), with cavity lengths of up to ∼ 9 μm and maximum fringe contrast of ∼ 19 dB, are fabricated by chemically etching Er- and B-doped optical fibers and then splicing the etched fiber to a single-mode fiber, for the first time to the best of our knowledge. The strain and temperature responses of the MEFPI sensors are investigated experimentally. Good linearity and high sensitivity are achieved. Such a type of MEFPI sensor is cost-effective and suitable for mass production, indicating its great potential for a wide range of applications. (fundamental areas of phenomenology(including applications))

  12. Analysis of the electron density features of small boron clusters and the effects of doping with C, P, Al, Si, and Zn: Magic B7P and B8Si clusters

    Science.gov (United States)

    Saha, P.; Rahane, A. B.; Kumar, V.; Sukumar, N.

    2016-05-01

    Boron atomic clusters show several interesting and unusual size-dependent features due to the small covalent radius, electron deficiency, and higher coordination number of boron as compared to carbon. These include aromaticity and a diverse array of structures such as quasi-planar, ring or tubular shaped, and fullerene-like. In the present work, we have analyzed features of the computed electron density distributions of small boron clusters having up to 11 boron atoms, and investigated the effect of doping with C, P, Al, Si, and Zn atoms on their structural and physical properties, in order to understand the bonding characteristics and discern trends in bonding and stability. We find that in general there are covalent bonds as well as delocalized charge distribution in these clusters. We associate the strong stability of some of these planar/quasiplanar disc-type clusters with the electronic shell closing with effectively twelve delocalized valence electrons using a disc-shaped jellium model. {{{{B}}}9}-, B10, B7P, and B8Si, in particular, are found to be exceptional with very large gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, and these are suggested to be magic clusters.

  13. Adsorption of carbon monoxide on boroxol-ring-doped zigzag boron nitride nanotube: Electronic study via DFT

    Science.gov (United States)

    Zahedi, Ehsan; Yari, Maryam; Bahmanpour, Hooman

    2016-04-01

    Previous works have already demonstrated that reactivity and sensitivity of boron nitride nanotubes (BNNTs) toward gas molecules can be modified by impurity. In this work, three nitrogen atoms of BNNT (7,0) are replaced with oxygen to study the adsorption of CO molecule through the surface of boroxol ring with different adsorption patterns, including side-on and end-on. All calculations have been done using the DFT-B3LYP/6-31G * level of theory, and their electronic energies are corrected by gCP and D3 correction terms. The calculated binding energies are large, which indicates that CO molecule undergoes chemical adsorption. NBO results showed that the charge transfer occurs from the tube to the gas molecule, which can slightly change the electronic properties of the tube. Density of state (DOS) and partial DOS (PDOS) analysis revealed that adsorption of CO molecule on the boroxol ring position is covalent in nature. The Laplacian of electron density, Lagrangian kinetic energy density, Hamiltonian kinetic energy density, and potential energy density at bond critical points between the tube and CO indicate that the interaction between the tube and CO molecule is covalent in nature. Topological analysis of the electron localization function shows that electrons in the new formed bonds are approximately localized, meaning that the nature of the adsorption process is chemical covalent.

  14. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    Energy Technology Data Exchange (ETDEWEB)

    de la Venta, J.; Basaran, Ali C.; Grant, T.; Gallardo-Amores, J. M.; Ramirez, J. G.; Alario-Franco, M. A.; Fisk, Z.; Schuller, Ivan K.

    2013-08-01

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr3Si2 phase.

  15. Boronic acid functionalized N-doped carbon quantum dots as fluorescent probe for selective and sensitive glucose determination

    Science.gov (United States)

    Jiang, Guohua; Jiang, Tengteng; Li, Xia; Wei, Zheng; Du, Xiangxiang; Wang, Xiaohong

    2014-04-01

    Nitrogen doped carbon quantum dots (NCQDs) of about 10 nm in diameter have been obtained by hydrothermal reaction from collagen. Because of the superiority of water dispersion, low toxicity and ease of functionlization, the NCQDs were designed as a glucose sensor after covalent grafting by 3-aminophenylboronic (APBA) (APBA-NCQDs). The as-prepared APBA-NCQDs were imparted with glucose sensitivity and selectivity from other saccharides via fluorescence (FL) quenching effect at physiological pH and at room temperature, which show high sensitivity and specificity for glucose determination with a wide range from 1 mM to 14 mM. FL quenching mechanism of APBA-NCQDs was also investigated by adding an external quencher. The APBA-NCQDs-based platform is an environmentally friendly way to substitute inorganic quantum dots containing heavy metals which offer a facile and low cost detection method.

  16. Role of swift heavy ions irradiation on the emission of boron doped ZnO thin films for near white light application

    International Nuclear Information System (INIS)

    Highlights: • ZnO:B thin film irradiated by 80 MeV Br6+ ions. • Compressive to tensile stress was observed with increase in fluences. • Oxygen related defect is decreased after irradiation. • Near white light emission was achieved in the ZnO:B. • The colour of the emitted light can be tuned by SHI. - Abstract: Boron doped ZnO (ZnO:B) thin films on silicon substrates were synthesized with the sol–gel method using the spin coating technique. The films were irradiated by 80 MeV Br+6 ions at various ion fluences. The X-ray diffraction results indicate that ZnO:B crystallized in the normal hexagonal wurtzite structure of ZnO. X-ray photoelectron spectroscopy data indicated that the O1s peak consist of three components designated as O1 (coming from ZnO), O2 (coming from defects) and O3 (coming from adsorbed species). Defect level emission (DLE) was obtained in the luminescence spectra of the pristine ZnO:B sample while the strong UV emission was observed for the ion irradiated films. The intensity of the DLE emission decreased after irradiation while the band to band emission increased after ion irradiation. A direct correlation between the amount of defects (O2 peak of XPS) and the DLE was observed. The emission of the ZnO:B is exponentially correlated with the swift heavy ion induced stress and the amount of defects. These ZnO:B thin films may be used for near white light emission applications

  17. 掺硼金刚石膜电极处理医院废水的研究%Study on Hospital Wastewater using Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    于鲁冀; 孔德芳; 王震; 杨强

    2013-01-01

    通过研究自制电解槽,利用掺硼金刚石膜电极(BDD)对医疗废水进行消毒实验研究.实验研究了电流密度、消毒时间及Cl-浓度对消毒效果的影响.实验结果表明:电流密度越大,消毒效果越好;消毒接触时间越长,消毒效果越好;Cl-浓度对消毒效果影响显著,医疗废水C1-质量浓度达到200 mg/L以上,消毒接触时间≥9s,出水即可满足GB 18466-2005《医疗机构水污染物排放标准》粪大肠茵群数均不得超过500 MPN/L.%Study on the disinfection effect of hospital wastewater using the boron-doped diamond film electrode (BDD) in the self-electrolyzer was carried out. The disinfection effect of current density, disinfection time and the concentration of CV were studied in this experiment. The results showed that the greater the electric current density is, the better disinfection effect will be. The longer the contact time is,the better disinfection effect will be. The concentration of Cl- is significant on the disinfection effect. When the concentration of Cl- in hospital wastewater is more than 200 mg/L as well as the disinfection contact time is more than 9 s,the effluent could meet the requirement of the Medical Institutions Sewage Discharge Standard (GB 18466—2005) in which the value of fecal coliform should be no more than 500 MPN/L.

  18. AFM studies and electrochemical characterization of boron-doped diamond surfaces modified with metal oxides by the sol-gel method

    International Nuclear Information System (INIS)

    Continuing previous investigations, direct surface modifications of boron-doped diamond (BDD) electrodes with metal oxides (PtOx, RuO2, IrO2 and PbO2) and with some mixed composites were carried out by the Sol-Gel technique. The materials were studied by atomic force microscopy (AFM) to determine their surface topologies and by electrochemical techniques to establish the catalytic activity towards the oxygen evolution reaction (OER) and also, for the PtOx and PtOx- RuO2 composites, the ethanol oxidation reactions in acid media. The stability of PtOx coating covered by a Nafiontrade mark film was also tested by long-term operation. The AFM results indicated sites of heterogeneous deposition and the electrochemical studies demonstrated that the active surface area changed considerably with the proposed method of modification. The IrO2/BDD electrode showed the best performance to the OER with the onset of the oxidation current at ∼1.4 V, a value 200 mV lower than for the PtOx/BDD electrode. The enhanced stability of PtOx/BDD electrodes achieved by the application of a Nafiontrade mark film and already reported in acid media was further proved using the ethanol oxidation reaction. Only a small loss of activity (6%) was observed after 4-hours electrolysis while one-thousand voltammetric cycles left the surface practically unchanged. In addition, preliminary studies for the same reaction on PtOx/BDD and PtOx-RuO2/ BDD electrodes demonstrated the excellent activity of these mixed Sol-Gel coatings on the BDD surface and the possibility of further investigations for practical applications. (author)

  19. Mineralization of salicylic acid in acidic aqueous medium by electrochemical advanced oxidation processes using platinum and boron-doped diamond as anode and cathodically generated hydrogen peroxide.

    Science.gov (United States)

    Guinea, Elena; Arias, Conchita; Cabot, Pere Lluís; Garrido, José Antonio; Rodríguez, Rosa María; Centellas, Francesc; Brillas, Enric

    2008-01-01

    Solutions containing 164 mg L(-1) salicylic acid of pH 3.0 have been degraded by electrochemical advanced oxidation processes such as anodic oxidation, anodic oxidation with electrogenerated H(2)O(2), electro-Fenton, photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Their oxidation power has been comparatively studied in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and a graphite or O(2)-diffusion cathode. In the three latter procedures, 0.5mM Fe(2+) is added to the solution to form hydroxyl radical (()OH) from Fenton's reaction between Fe(2+) and H(2)O(2) generated at the O(2)-diffusion cathode. Total mineralization is attained for all methods with BDD and for photoelectro-Fenton and solar photoelectro-Fenton with Pt. The poor decontamination achieved in anodic oxidation and electro-Fenton with Pt is explained by the slow removal of most pollutants by ()OH formed from water oxidation at the Pt anode in comparison to their quick destruction with ()OH produced at BDD. ()OH generated from Fenton's reaction oxidizes rapidly all aromatic pollutants, but it cannot destroy final Fe(III)-oxalate complexes. Solar photoelectro-Fenton treatments always yield quicker degradation rate due to the very fast photodecarboxylation of these complexes by UVA irradiation supplied by solar light. The effect of current density on the degradation rate, efficiency and energy cost of all methods is examined. The salicylic acid decay always follows a pseudo-first-order kinetics. 2,3-Dihydroxybenzoic, 2,5-dihydroxybenzoic, 2,6-dihydroxybenzoic, alpha-ketoglutaric, glycolic, glyoxylic, maleic, fumaric, malic, tartronic and oxalic acids are detected as oxidation products. A general reaction sequence for salicylic acid mineralization considering all these intermediates is proposed. PMID:17692891

  20. Degradation of amaranth dye in alkaline medium by ultrasonic cavitation coupled with electrochemical oxidation using a boron-doped diamond anode

    International Nuclear Information System (INIS)

    Amaranth dye is used widely in the processing of paper, textiles, foods, cosmetics, beverages and medicines, and effluents contaminated with this compound are discharged daily into the environment. Recent studies have shown that azo dyes, especially those such as amaranth dye that have been classified as endocrine disruptors, may cause adverse effects to animal and human health. This paper describes the application of electrochemical oxidation (with a boron-doped diamond BDD thin-film anode) coupled with ultrasound sonolysis (20 kHz and 523 W cm−2) to the removal of amaranth dye from dilute alkaline solution. The electrochemical and sonoelectrochemical processes (ECh and SECh, respectively) were carried out at constant current density (10 to 50 mA cm−2) in a single compartment cylindrical cell. Sonolysis was virtually less useful for the decolorization and degradation of amaranth dye, whilst ECh and SECh were more effective in degrading the dye with almost complete removal (90 - 95%) attained after 90 min of experiment at an applied current density of 50 mA cm−2. Degradation of the dye followed pseudo first-order kinetics in both processes, but the rate of reaction was faster with the SECh treatment confirming a synergistic effect between the cavitation process and the electrochemical system. Additionally, at low applied current densities (10 and 25 mA cm−2), SECh was considerably more effective than ECh for the amaranth dye mineralization. Although at 35 and 50 mA cm−2, the two processes showed the respective removal of total organic carbon values: (i) 85% for the ECh and 90% for the SECh at 35 mA cm−2; (ii) 96% for the ECh and 98% for the SECh at 50 mA cm−2. It is concluded that SECh presented the most favorable results for the decontamination of wastewaters containing azo dye compounds