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Sample records for boron doped diamond

  1. Characterization of boron doped nanocrystalline diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/{mu}m range.

  2. Piezoresistive boron doped diamond nanowire

    Science.gov (United States)

    Sumant, Anirudha V.; Wang, Xinpeng

    2016-09-13

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  3. 11B nuclear magnetic resonance in boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Miwa Murakami, Tadashi Shimizu, Masataka Tansho and Yoshihiko Takano

    2008-01-01

    Full Text Available This review summarizes recent results obtained by 11B solid-state nuclear magnetic resonance (NMR on boron-doped diamond, grown by the high-pressure high-temperature (HPHT or chemical vapor deposition techniques. Simple single-pulse experiments as well as advanced two-dimensional NMR experiments were applied to the boron sites in diamond. It is shown that magic-angle spinning at magnetic fields above 10 T is suitable for observation of high-resolution 11B spectra of boron-doped diamond. For boron-doped HPHT diamonds, the existence of the excess boron that does not contribute to electrical conductivity was confirmed and its 11B NMR signal was characterized. The point-defect structures (B+H complexes and -B-B-/-B-C-B- clusters, postulated previously for the excess boron, were discarded and graphite-like structures were assigned instead.

  4. Technology for boron-doped layers formation on the diamond

    Directory of Open Access Journals (Sweden)

    Zyablyuk K. N.

    2012-10-01

    Full Text Available The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impurity density indicate that they can be used for the manufacture of microwave field-effect transistors operating at room temperature. CVD diamond films doped with boron during the growth process also have the required for MOSFET manufacture carrier mobility. However, due to the high activation energy of boron, the required channel conductivity is achieved at high operating temperatures.

  5. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

    Science.gov (United States)

    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  6. Global and local superconductivity in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  7. Thermal diffusion boron doping of single-crystal natural diamond

    Science.gov (United States)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  8. In/extrinsic granularity in superconducting boron-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B.L. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, P.O. 14-0149, Lima-14 (Peru); Zhang, G. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Vanacken, J., E-mail: johan.vanacken@fys.kuleuven.b [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Moshchalkov, V.V. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Guillamon, I.; Suderow, H.; Vieira, S. [Laboratorio de Bajas Temperaturas, Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid (Spain); Janssens, S.D. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Haenen, K.; Wagner, P. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Division IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-10-01

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C{sub 1-x}B{sub x} diamond:B can exhibit an insulator-to-metal transition (p{sub Mott{approx}}2x10{sup 20}cm{sup -3}). Under even heavier boron doping (n{sub B{approx}}10{sup 21}cm{sup -3}), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T{sub C} below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  9. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  10. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-01-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials. PMID:28233808

  11. Elastic and mechanical softening in boron-doped diamond.

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N; Bina, Craig R; Jacobsen, Steven D

    2017-02-24

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  12. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-02-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  13. Diamond-modified AFM probes: from diamond nanowires to atomic force microscopy-integrated boron-doped diamond electrodes.

    Science.gov (United States)

    Smirnov, Waldemar; Kriele, Armin; Hoffmann, René; Sillero, Eugenio; Hees, Jakob; Williams, Oliver A; Yang, Nianjun; Kranz, Christine; Nebel, Christoph E

    2011-06-15

    In atomic force microscopy (AFM), sharp and wear-resistant tips are a critical issue. Regarding scanning electrochemical microscopy (SECM), electrodes are required to be mechanically and chemically stable. Diamond is the perfect candidate for both AFM probes as well as for electrode materials if doped, due to diamond's unrivaled mechanical, chemical, and electrochemical properties. In this study, standard AFM tips were overgrown with typically 300 nm thick nanocrystalline diamond (NCD) layers and modified to obtain ultra sharp diamond nanowire-based AFM probes and probes that were used for combined AFM-SECM measurements based on integrated boron-doped conductive diamond electrodes. Analysis of the resonance properties of the diamond overgrown AFM cantilevers showed increasing resonance frequencies with increasing diamond coating thicknesses (i.e., from 160 to 260 kHz). The measured data were compared to performed simulations and show excellent correlation. A strong enhancement of the quality factor upon overgrowth was also observed (120 to 710). AFM tips with integrated diamond nanowires are shown to have apex radii as small as 5 nm and where fabricated by selectively etching diamond in a plasma etching process using self-organized metal nanomasks. These scanning tips showed superior imaging performance as compared to standard Si-tips or commercially available diamond-coated tips. The high imaging resolution and low tip wear are demonstrated using tapping and contact mode AFM measurements by imaging ultra hard substrates and DNA. Furthermore, AFM probes were coated with conductive boron-doped and insulating diamond layers to achieve bifunctional AFM-SECM probes. For this, focused ion beam (FIB) technology was used to expose the boron-doped diamond as a recessed electrode near the apex of the scanning tip. Such a modified probe was used to perform proof-of-concept AFM-SECM measurements. The results show that high-quality diamond probes can be fabricated, which are

  14. Boron doped diamond biotechnology: from sensors to neurointerfaces.

    Science.gov (United States)

    Hébert, C; Scorsone, E; Bendali, A; Kiran, R; Cottance, M; Girard, H A; Degardin, J; Dubus, E; Lissorgues, G; Rousseau, L; Mailley, P; Picaud, S; Bergonzo, P

    2014-01-01

    Boron doped nanocrystalline diamond is known as a remarkable material for the fabrication of sensors, taking advantage of its biocompatibility, electrochemical properties, and stability. Sensors can be fabricated to directly probe physiological species from biofluids (e.g. blood or urine), as will be presented. In collaboration with electrophysiologists and biologists, the technology was adapted to enable structured diamond devices such as microelectrode arrays (MEAs), i.e. common electrophysiology tools, to probe neuronal activity distributed over large populations of neurons or embryonic organs. Specific MEAs can also be used to build neural prostheses or implants to compensate function losses due to lesions or degeneration of parts of the central nervous system, such as retinal implants, which exhibit real promise as biocompatible neuroprostheses for in vivo neuronal stimulations. New electrode geometries enable high performance electrodes to surpass more conventional materials for such applications.

  15. Structure and superconductivity of isotope-enriched boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Evgeny A Ekimov, Vladimir A Sidorov, Andrey V Zoteev, Yury B Lebed, Joe D Thompson and Sergey M Stishov

    2008-01-01

    Full Text Available Superconducting boron-doped diamond samples were synthesized with isotopes of 10B, 11B, 13C and 12C. We claim the presence of a carbon isotope effect on the superconducting transition temperature, which supports the 'diamond-carbon'-related nature of superconductivity and the importance of the electron–phonon interaction as the mechanism of superconductivity in diamond. Isotope substitution permits us to relate almost all bands in the Raman spectra of heavily boron-doped diamond to the vibrations of carbon atoms. The 500 cm−1 Raman band shifts with either carbon or boron isotope substitution and may be associated with vibrations of paired or clustered boron. The absence of a superconducting transition (down to 1.6 K in diamonds synthesized in the Co–C–B system at 1900 K correlates with the small boron concentration deduced from lattice parameters.

  16. Boron-Doped Diamond Electrode in Sodium Sulphate Medium

    Directory of Open Access Journals (Sweden)

    Codruţa Cofan

    2011-01-01

    Full Text Available Differential pulse voltammetry (DPV and chronoamperometry (CA were used to detect and determine acetylsalicylic acid (ASA at a mildly oxidized boron-doped diamond (BDD electrode in a neutral sodium sulphate solution as supporting electrolyte. ASA determination in unbuffered medium was achieved using neutralized standard and real samples. Over the concentration range of 0.01 mM–0.1 mM, linear calibration plots of anodic current peaks in DPV and anodic currents in CA experiments versus concentration were obtained with very high correlation coefficients and good sensitivity values. The limits of detection were situated around 1 μM. The association of DPV and CA techniques with standard addition method represented a suitable option for the determination of ASA in real samples such as pharmaceutical formulations.

  17. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

    OpenAIRE

    Mortet, Vincent; Pernot, J.; Jomard, F.; Soltani, A; Remes, Zdenek; Barjon, Julien; D'Haen, J; Haenen, Ken

    2015-01-01

    Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation...

  18. Nucleosides and ODN electrochemical detection onto boron doped diamond electrodes.

    Science.gov (United States)

    Fortin, Elodie; Chane-Tune, Jérôme; Mailley, Pascal; Szunerits, Sabine; Marcus, Bernadette; Petit, Jean-Pierre; Mermoux, Michel; Vieil, Eric

    2004-06-01

    Boron doped diamond (BDD) is a promising material for electroanalytical chemistry due mainly to its chemical stability, its high electrical conductivity and to the large amplitude of its electroactive window in aqueous media. The latter feature allowed us to study the direct oxidation of the two electroactive nucleosides, guanosine and adenosine. The BDD electrode was first activated by applying high oxidizing potentials, allowing to increase anodically its working potential window through the oxidation of CH surface groups into hydroxyl and carbonyl terminations. Guanosine (1.2 V vs. Ag/AgCl) and adenosine (1.5 V vs. Ag/AgCl) could then be detected electrochemically with an acceptable signal to noise ratio. The electrochemical signature of each oxidizable base was assessed using differential pulse voltammetry (DPV), in solutions containing one or both nucleosides. These experiments pointed out the existence of adsorption phenomena of the oxidized products onto the diamond surface. Scanning electrochemical microscopy (SECM) was used to investigate these adsorption effects at the microscopic scale. The usefulness of BDD electrodes for the direct electrochemical detection of synthetic oligonucleotides is also evidenced.

  19. 11B-NMR study in boron-doped diamond films

    Directory of Open Access Journals (Sweden)

    H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated an origin of the superconductivity discovered in boron (B-doped diamonds by means of 11B-NMR on heteroepitaxially grown (1 1 1 and (1 0 0 films and polycrystalline film. The characteristic difference of B-NMR spectral shape for the (1 1 1 and (1 0 0 thin films is demonstrated as arising from the difference in the concentration (nB(1 of boron substituted for carbon. It is revealed from a scaling between a superconducting transition temperature Tc and nB(1 that the holes doped into diamond via the substitution of boron for carbon are responsible for the onset of superconductivity. The result suggests that the superconductivity in boron-doped diamond is mediated by the electron–phonon interaction brought about a high Debye temperature ~1860 K characteristic for the diamond structure.

  20. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  1. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  2. Growth and electrical characterisation of {delta}-doped boron layers on (111) diamond surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Edgington, Robert; Jackman, Richard B. [London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH (United Kingdom); Sato, Syunsuke; Ishiyama, Yuichiro; Kawarada, Hiroshi [Department of Electronic and Photonic Systems, Waseda University, Okubo 3-4-1, Shinjuku, Tokyo 169-8555 (Japan); Morris, Richard [Advanced SIMS Projects, Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2012-02-01

    A plasma enhanced chemical vapor deposition protocol for the growth of {delta}-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10{sup 20} cm{sup -3}.

  3. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Institute of Scientific and Technical Information of China (English)

    Li Shang-Sheng; Ma Hong-An; Li Xiao-Lei; Su Tai-Chao; Huang Guo-Feng; Li Yong; Jia Xiao-Peng

    2011-01-01

    High-quality p-type boron-doped II0b diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

  4. Synthesis of Boron-doped Diamond/Porous Ti Composite Materials——Effect of Carbon Concentration

    Institute of Scientific and Technical Information of China (English)

    MA Ming; CHANG Ming; LI Xiaowei

    2012-01-01

    Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique.The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated,and the effects of carbon concentration on nucleation density and diamond growth were also studied.The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy.The structures of diamond film and interlayer were analyzed by X-ray diffraction.The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy.The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration.The thickness of intermediate layer decreases with the carbon concentration increasing.

  5. Raman scattering in heavily boron-doped single-crystal diamond

    Directory of Open Access Journals (Sweden)

    G. Faggio

    2011-09-01

    Full Text Available A series of boron-doped homoepitaxial diamond films grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.

  6. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  7. Voltammetric determination of wedelolactone, an anti-HIV herbal drug, at boron-doped diamond electrode

    Indian Academy of Sciences (India)

    Sachin Saxena; Ratnanjali Shrivastava; Soami P Satsangee

    2015-05-01

    Boron-doped diamond electrode has been utilized for the study of electrochemical behaviour of an anti-HIV herbal drug wedelolactone in Britton-Robinson buffer (pH-2.5) by square-wave and cyclic voltammetry techniques. The response characteristics of cyclic voltammetry and square wave voltammetry showed a remarkable increase in the anodic peak current and electrochemical impedance spectroscopy revealed a lowering in charge transfer resistance at the boron-doped diamond electrode as compared to the glassy carbon electrode that can be attributed to the higher sensitivity of boron-doped diamond sensor. Cyclic voltammetry at the boron-doped diamond surface revealed the oxidation of wedelolactone with two oxidation peaks (P1 and P2) with Ep1 = 0.4V and Ep2 =1.00 V with scan rate varying from 10 - 220 mV/s and exhibits diffusion-controlled process. Based on the electrochemical measurements, a probable oxidation mechanism has been deduced and the electrode dynamics parameters have been evaluated. The effect of concentration on the peak currents of wedelolactone was found to have a linear relationship within the concentration range of 50–700 ng/mL. The LOD and LOQ were found to be 43.87 and 132.93 ng/mL respectively. The applicability of the proposed method was further scrutinized by the successful determination of wedelolactone in real plant samples.

  8. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH electro

  9. Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

    NARCIS (Netherlands)

    Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

    2013-01-01

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy ca

  10. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  11. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  12. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    Science.gov (United States)

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  13. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  14. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  15. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Energy Technology Data Exchange (ETDEWEB)

    Alegre, M. P., E-mail: maripaz.alegre@uca.es; Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P. [Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  16. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    OpenAIRE

    Alejandro Medel; Erika Bustos; Karen Esquivel; Godínez, Luis A.; Yunny Meas

    2012-01-01

    Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. ...

  17. Boron doped diamond electrode for the wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Quiroz Alfaro, Marco Antonio [Universidad de las Americas-Puebla, Santa Catarina Martir (Mexico). Escuela de Ciencias. Dept. de Quimica y Biologia; Ferro, Sergio; Martinez-Huitle, Carlos Alberto [University of Ferrara (Italy). Dept. of Chemistry; Vong, Yunny Meas [Centro de Investigacion y Desarrollo Tecnologico en Electroquimica S.C., Quertaro (Mexico). Parque Tecnologico Queretaro Sanfandila

    2006-03-15

    Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

  18. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  19. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    Science.gov (United States)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  20. Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems

    Indian Academy of Sciences (India)

    SAJAD HUSSAIN DIN; M A SHAH; N A SHEIKH; K A NAJAR; K RAMASUBRAMANIAN; S BALAJI; M S RAMACHANDRA RAO

    2016-12-01

    Titanium alloy (Ti6Al4V) substrates were deposited with smooth multilayer coatings, by hot filament chemical vapour deposition technique. The effect of boron doping on lattice parameter, residual stresses, hardness and coefficient of friction in multilayer-diamond coating system was studied. The frictional behaviour of the coatings was studied using a ball-on-disc micro-tribometer by sliding the coated samples of titanium alloy (Ti6Al4V) substrates against alumina (Al$_2$O$_3$) balls, and increasing normal load from 1 to 10N. The average friction coefficient decreased from 0.36 to 0.29 for undoped multilayer-diamond coating system and from 0.33 to 0.18 for borondoped (BD) multilayer-diamond coating system. The average indentation depths for undoped and BD multilayerdiamond coating systems were found to be equal to $\\sim$58 and $\\sim$65 nm, respectively, and their hardness values were 60 and 55~GPa, respectively.

  1. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  2. In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

    Science.gov (United States)

    Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

    2016-01-01

    Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo.

  3. Effects of the surface-adsorption of boron-doped diamond electrode on its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    LIU Fengbin; LI Xuemin; WANG Jiadao; LIU Bing; CHEN Darong

    2006-01-01

    To elucidate the effects of the hydro- genation and oxygenation of the boron-doped diamond (BDD) electrode on its electrochemical behaviors, the surface morphologies and phases of the two surface-adsorption BDD films have been investigated and the cyclic voltammograms and AC impedance spectra have been measured at these two BDD electrodes. The results indicate that compared with the hydrogen-adsorption BDD film, oxygen-adsor- ption BDD film is less conductive, and has a larger surface roughness and a lower sp3/sp2 ratio. The oxygenated BDD film electrode possesses a wider electrochemical window, larger diamond film resistance and capacitance and a larger polarization resistance than hydrogenated BDD electrode. In addition, the effect mechanism of the surface-adsorption of BDD electrode on its electrochemical behaviors has been discussed.

  4. Domestic and Industrial Water Disinfection Using Boron-Doped Diamond Electrodes

    Science.gov (United States)

    Rychen, Philippe; Provent, Christophe; Pupunat, Laurent; Hermant, Nicolas

    This chapter first describes main properties and manufacturing process (production using HF-CVD, quality-control measurements, etc.) of diamond electrodes and more specifically boron-doped diamond (BDD) electrodes. Their exceptional properties make such electrodes particularly suited for many disinfection applications as thanks to their wide working potential window and their high anodic potential, they allow generating a mixture of powerful oxidizing species mainly based on active oxygen and peroxides. Such mixture of disinfecting agents is far more efficient than conventional chemical or physical known techniques. Their efficiency was tested against numerous microorganisms and then proved to be greater than conventional methods. All bacteria and viruses tested up to date were inactivated 3-5 times faster with a treatment based on with BDD electrodes and the DiaCellⓇ technology than with other techniques. Several applications, either industrial or private (wellness and home use), are discussed with a focus on the dedicated products and the main technology advantages.

  5. Benzene Oxidation on Boron-Doped Diamond Electrode: Electrochemical-Impedance Study of Adsorption Effects

    Directory of Open Access Journals (Sweden)

    Yuri Pleskov

    2012-01-01

    Full Text Available Benzene oxidation at a boron-doped diamond anode in 0.5 M K2SO4 aqueous solution is studied by cyclic voltammetry and electrochemical impedance spectroscopy. It is shown by measurements of differential capacitance and anodic current that in the ideal-polarizability potential region benzene either is not adsorbed at the diamond electrode or the benzene adsorption does not affect its capacitance. At more positive potentials, the adsorption of some intermediate of the benzene oxidation occurs at the electrode. The intermediate partially blocks the electrode surface and lowers the anodic current. The very fact of the electrode surface blocking is reflected in the complex-plane presentation of the impedance-potential plots.

  6. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    Directory of Open Access Journals (Sweden)

    Alejandro Medel

    2012-01-01

    Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

  7. Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    L.A. Li; S.H. Cheng; H.D. Li; Q. Yu; J.W. Liu; X.Y. Lv

    2010-01-01

    In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

  8. Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes

    Science.gov (United States)

    Granger; Witek; Xu; Wang; Hupert; Hanks; Koppang; Butler; Lucazeau; Mermoux; Strojek; Swain

    2000-08-15

    Standard electrochemical data for high-quality, boron-doped diamond thin-film electrodes are presented. Films from two different sources were compared (NRL and USU) and both were highly conductive, hydrogen-terminated, and polycrystalline. The films are acid washed and hydrogen plasma treated prior to use to remove nondiamond carbon impurity phases and to hydrogen terminate the surface. The boron-doping level of the NRL film was estimated to be in the mid 1019 B/cm3 range, and the boron-doping level of the USU films was approximately 5 x 10(20) B/cm(-3) based on boron nuclear reaction analysis. The electrochemical response was evaluated using Fe-(CN)6(3-/4-), Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, dopamine, ascorbic acid, Fe(3+/2+), and chlorpromazine. Comparisons are made between the apparent heterogeneous electron-transfer rate constants, k0(app), observed at these high-quality diamond films and the rate constants reported in the literature for freshly activated glassy carbon. Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, and chlorpromazine all involve electron transfer that is insensitive to the diamond surface microstructure and chemistry with k0(app) in the 10(-2)-10(-1) cm/s range. The rate constants are mainly influenced by the electronic properites of the films. Fe(CN)6(3-/4-) undergoes electron transfer that is extremely sensitive to the surface chemistry with k0(app) in the range of 10(-2)-10(-1) cm/s at the hydrogen-terminated surface. An oxygen surface termination severely inhibits the rate of electron transfer. Fe(3+/2+) undergoes slow electron transfer at the hydrogen-terminated surface with k0(app) near 10(-5) cm/s. The rate of electron transfer at sp2 carbon electrodes is known to be mediated by surface carbonyl functionalities; however, this inner-sphere, catalytic pathway is absent on diamond due to the hydrogen termination. Dopamine, like other catechol and catecholamines, undergoes sluggish electron transfer with k0(app) between 10

  9. TECHNIQUE OF ESTIMATE OF ABSORPTION COEFFICIENT LASER RADIATION IN BORON DOPED DIAMONDS BY INTENSITY OF RAMAN SCATTERING

    Directory of Open Access Journals (Sweden)

    O. N. Poklonskaya

    2013-01-01

    Full Text Available Results of measurements of Raman scattering at the room temperature in air in boron doped synthetic diamonds (five with boron concentrations 2·1017; 6·1017; 2·1018; 1,7·1019; 1·1020 cm–3 and one intentionally undoped are presented. The laser with wavelength 532 nm was used for Raman scattering excitation. Dependences of integral intensity and halfwidth of diamond Raman line with respect to the doping level are presented. In the geometrical optics approximation an expression for doped to undoped integral intensity ratio is obtained. Qualitative estimates of conductivity of the studied samples are conducted. The obtained results can be applied for mapping of near-surface laser radiation absorption coefficient of synthetic single crystal diamonds and for their quality control.

  10. DC current and AC impedance measurements on boron-doped single crystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Haitao; Gaudin, O.; Jackman, R.B. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Muret, P.; Gheeraert, E. [Laboratoire d' Etudes des Proprietes Electroniques des Solides, BP166, 38042 Grenoble Cedex 9 (France)

    2003-09-01

    In this paper, we report the first measurement of impedance on boron-doped single crystalline diamond films from 0.1 Hz to 10 MHz with the temperature ranging from -100 C up to 300 C. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 70 G{omega} at -100 C to 5 k{omega} at 300 C. The linear curve fitting from -100 C to 150 C shows the sample has an activation energy of 0.37 eV, which is consistent with the theoretical value published of this kind of material. The equivalent capacitance is maintained at the level of pF up to 300 C suggesting that no grain boundaries are being involved, as expected from a single crystal diamond. The activation energy from the dc current-temperature curves is 0.36 eV, which is consistent with the value from ac impedance. The potential of this under-used technique for diamond film analysis will be discussed. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. ortho-Selective phenol-coupling reaction by anodic treatment on boron-doped diamond electrode using fluorinated alcohols.

    Science.gov (United States)

    Kirste, Axel; Nieger, Martin; Malkowsky, Itamar M; Stecker, Florian; Fischer, Andreas; Waldvogel, Siegfried R

    2009-01-01

    Enlarged scope by fluorinated mediators: Oxyl radicals are easily formed on boron-doped diamond (BDD) electrodes and can be exploited for the ortho-selective coupling to the corresponding biphenols (see scheme). At partial conversion, a clean transformation is achieved that can be applied to electron-rich as well as fluorinated phenols.

  12. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren;

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  13. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products.

    Science.gov (United States)

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi; Einaga, Yasuaki; Nishiyama, Shigeru

    2015-01-01

    The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  14. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    Energy Technology Data Exchange (ETDEWEB)

    Araújo, D.; Alegre, M. P.; Piñero, J. C. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Fiori, A.; Bustarret, E. [Institut Néel, CNRS-Université Joseph Fourier, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [Groupe d' Etude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  15. Characterization of boron doped diamond-like carbon film by HRTEM

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.J., E-mail: lixj@alum.imr.ac.cn [College of Material Science and Engineering, Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012 (China); He, L.L., E-mail: llhe@imr.ac.cn [Shenyang National Lab of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Li, Y.S. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Hirose, A. [Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada)

    2015-12-01

    Graphical abstract: - Highlights: • The microstructure of B-DLC film is studied by HRTEM in cross-sectional observation. • Many crystalline nanoparticles dispersed in the amorphous matrix film are observed. • Through composition and structure analysis, the nanoparticles are identified as B{sub 2}O. • The work implies the doped B element exists as oxide state in the B-DLC film. - Abstract: Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B{sub 2}O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  16. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    Energy Technology Data Exchange (ETDEWEB)

    Chicot, G., E-mail: gauthier.chicot@neel.cnrs.fr; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 38042 Grenoble (France); CNRS, Institut NEEL, 38042 Grenoble (France); Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France); Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C. [IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d' Ascq (France); Alegre, M. P.; Piñero, J. C.; Araújo, D. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Jomard, F. [Groupe d' Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex (France); and others

    2014-08-28

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

  17. Metal-bosonic insulator-superconductor transition in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Zeleznik, Monika; Vanacken, Johan; May, Paul W; Moshchalkov, Victor V

    2013-02-15

    In a variety of superconductors, mostly in two-dimensional (2D) and one-dimensional (1D) systems, the resistive superconducting transition R(T) demonstrates in many cases an anomalous narrow R(T) peak just preceding the onset of the superconducting state R=0 at T(c). The amplitude of this R(T) peak in 1D and 2D systems ranges from a few up to several hundred percent. In three-dimensional (3D) systems, however, the R(T) peak close to T(c) is rarely observed, and it reaches only a few percent in amplitude. Here we report on the observation of a giant (∼1600%) and very narrow (∼1  K) resistance peak preceding the onset of superconductivity in heavily boron-doped diamond. This anomalous R(T) peak in a 3D system is interpreted in the framework of an empirical model based on the metal-bosonic insulator-superconductor transitions induced by a granularity-correlated disorder in heavily doped diamond.

  18. Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Orawon Chailapakul

    2008-03-01

    Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

  19. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    Science.gov (United States)

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  20. Boron-doped diamond electrode: Preparation, characterization and application for electrocatalytic degradation of m-dinitrobenzene.

    Science.gov (United States)

    Bai, Hongmei; He, Ping; Pan, Jing; Chen, Jingchao; Chen, Yang; Dong, Faqing; Li, Hong

    2017-07-01

    Boron-doped diamond (BDD) electrode was successfully prepared via microwave plasma chemical vapor deposition method and it was used in electrocatalytic degradation of m-dinitrobenzene (m-DNB). The electrocatalytic degradation efficiency of m-DNB was evaluated under different experimental parameters including current density, temperature, pH, Na2SO4 concentration and initial m-DNB concentration. Under optimal parameters, degradation efficiency of m-DNB reached up to 82.7% after 150min. The degradation process of m-DNB was fitted well with pseudo first-order kinetics. Moreover, UV and HPLC analyses implied that m-DNB was totally destroyed and mineralized after 240min degradation, and the proposed mechanism during the electrocatalytic degradation process was analyzed. All these results demonstrated that BDD electrode possessed excellent electrocatalytic property and showed a great potential application in wastewater treatment.

  1. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  2. Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-02-01

    An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

  3. Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedziolka-Joensson, Joanna [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Boland, Susan; Leech, Donal [School of Chemistry, National University of Irland, Galway (Ireland); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-01-01

    The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

  4. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    Science.gov (United States)

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  5. Electroanalytical determination of estriol hormone using a boron-doped diamond electrode.

    Science.gov (United States)

    Santos, Keliana D; Braga, Otoniel C; Vieira, Iolanda C; Spinelli, Almir

    2010-03-15

    A boron-doped diamond (BDD) electrode was used for the electroanalytical determination of estriol hormone in a pharmaceutical product and a urine sample taken during pregnancy by square-wave voltammetry. The optimized experimental conditions were: (1) a supporting electrolyte solution of NaOH at a pH of 12.0, and (2) a frequency of 20 Hz, a pulse height of 30 mV and a scan increment of 2 mV (for the square-wave parameters). The analytical curve was linear in the concentration range of 2.0 x 10(-7) to 2.0 x 10(-5) mol L(-1) (r=0.9994), with a detection limit of 1.7 x 10(-7) mol L(-1) and quantification limit of 8.5 x 10(-7) mol L(-1). Recoveries of estriol were in the range of 98.6-101.0%, for the pharmaceutical sample, and 100.2-103.4% for the urine sample, indicating no significant matrix interference effects on the analytical results. The accuracy of the electroanalytical methodology proposed was compared to that of the radioimmunoassay method. The values for the relative error between the proposed and standard methods were -7.29% for the determination of estriol in the commercial product and -4.98% in a urine sample taken during pregnancy. The results obtained suggest a reliable and interesting alternative method for electroanalytical determination of estriol in pharmaceutical products and urine samples taken during pregnancy using a boron-doped diamond electrode.

  6. Granular superconductivity in metallic and insulating nanocrystalline boron-doped diamond thin films

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B L; Zhang, G; Vanacken, J; Moshchalkov, V V [INPAC-Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200-D, 3000-Leuven (Belgium); Janssens, S D; Haenen, K; Wagner, P, E-mail: bramleo@hotmail.co [Institute for Materials Research (IMO), Hasselt University, BE-3590 Diepenbeek (Belgium)

    2010-09-22

    The low-temperature electrical transport properties of nanocrystalline boron-doped diamond (b-NCD) thin films have been found to be strongly affected by the system's granularity. The important differences between the high and low-temperature behaviour are caused by the inhomogeneous nucleation of superconductivity in the samples. In this paper we will discuss the experimental data obtained on several b-NCD thin films, which were studied by either varying their thickness or boron concentration. It will be shown that the low-temperature properties are influenced by the b-NCD grain boundaries as well as by the appearance of an intrinsic granularity inside these granules. Moreover, superconducting effects have been found to be present even in insulating b-NCD films and are responsible for the negative magnetoresistance regime observed at low temperatures. On the other hand, the low-temperature electrical transport properties of b-NCD films show important similarities with those observed for granular superconductors.

  7. Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

    2005-05-05

    Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

  8. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    DEFF Research Database (Denmark)

    Meijs, Suzan; Alcaide, Maria; Sørensen, Charlotte;

    2016-01-01

    OBJECTIVE: The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. APPROACH: Electrochemical impedance spectroscopy, cyclic voltammetry and ...... electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes....

  9. Electrochemical Sensing and Assessment of Parabens in Hydro-Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    OpenAIRE

    Vasile Ostafe; Codruta Cofan; Manuela Mincea; Florica Manea; Dan Cinghită; Ciprian Radovan

    2008-01-01

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 ...

  10. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products

    Directory of Open Access Journals (Sweden)

    Taiki Kojima

    2015-02-01

    Full Text Available The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26, was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  11. Lead detection using micro/nanocrystalline boron-doped diamond by square-wave anodic stripping voltammetry.

    Science.gov (United States)

    Arantes, Tatiane M; Sardinha, André; Baldan, Mauricio R; Cristovan, Fernando H; Ferreira, Neidenei G

    2014-10-01

    Monitoring heavy metal ion levels in water is essential for human health and safety. Electroanalytical techniques have presented important features to detect toxic trace heavy metals in the environment due to their high sensitivity associated with their easy operational procedures. Square-wave voltammetry is a powerful electrochemical technique that may be applied to both electrokinetic and analytical measurements, and the analysis of the characteristic parameters of this technique also enables the mechanism and kinetic evaluation of the electrochemical process under study. In this work, we present a complete optimized study on the heavy metal detection using diamond electrodes. It was analyzed the influence of the morphology characteristics as well as the doping level on micro/nanocrystalline boron-doped diamond films by means of square-wave anodic stripping voltammetry (SWASV) technique. The SWASV parameters were optimized for all films, considering that their kinetic response is dependent on the morphology and/or doping level. The films presented reversible results for the Lead [Pb (II)] system studied. The Pb (II) analysis was performed in ammonium acetate buffer at pH 4.5, varying the lead concentration in the range from 1 to 10 μg L(-1). The analytical responses were obtained for the four electrodes. However, the best low limit detection and reproducibility was found for boron doped nanocrystalline diamond electrodes (BDND) doped with 2000 mg L(-1) in B/C ratio.

  12. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Science.gov (United States)

    Ficek, M.; Sobaszek, M.; Gnyba, M.; Ryl, J.; Gołuński, Ł.; Smietana, M.; Jasiński, J.; Caban, P.; Bogdanowicz, R.

    2016-11-01

    This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm-2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  13. Electroanalytical investigation and determination of pefloxacin in pharmaceuticals and serum at boron-doped diamond and glassy carbon electrodes.

    Science.gov (United States)

    Uslu, Bengi; Topal, Burcu Dogan; Ozkan, Sibel A

    2008-02-15

    The anodic behavior and determination of pefloxacin on boron-doped diamond and glassy carbon electrodes were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. In cyclic voltammetry, pefloxacin shows one main irreversible oxidation peak and additional one irreversible ill-defined wave depending on pH values for both electrodes. The results indicate that the process of pefloxacin is irreversible and diffusion controlled on boron-doped diamond electrode and irreversible but adsorption controlled on glassy carbon electrode. The peak current is found to be linear over the range of concentration 2x10(-6) to 2x10(-4)M in 0.5M H(2)SO(4) at about +1.20V (versus Ag/AgCl) for differential pulse and square wave voltammetric technique using boron-doped diamond electrode. The repeatability, reproducibility, precision and accuracy of the methods in all media were investigated. Selectivity, precision and accuracy of the developed methods were also checked by recovery studies. The procedures were successfully applied to the determination of the drug in pharmaceutical dosage forms and humans serum samples with good recovery results. No electroactive interferences from the excipients and endogenous substances were found in the pharmaceutical dosage forms and biological samples, respectively.

  14. Electrochemical incineration of sulfanilic acid at a boron-doped diamond anode.

    Science.gov (United States)

    El-Ghenymy, Abdellatif; Arias, Conchita; Cabot, Pere Lluís; Centellas, Francesc; Garrido, José Antonio; Rodríguez, Rosa María; Brillas, Enric

    2012-06-01

    The anodic oxidation of sulfanilic acid solutions has been studied in acidic medium using a divided cell with a boron-doped diamond (BDD) anode and a stainless steel cathode. Overall mineralization was achieved under all experimental conditions tested due to the efficient destruction of sulfanilic acid and all its by-products with hydroxyl radicals generated at the BDD anode from water oxidation. The alternative use of an undivided cell with the same electrodes gave rise to the coating of the cathode with polymeric compounds, thus preventing the complete electrochemical incineration of sulfanilic acid. The solutions treated in the anodic compartment of the divided cell were degraded at similar rate under pH regulation within the pH interval 2.0-6.0. The mineralization current efficiency was enhanced when the applied current decreased and the initial substrate concentration increased. The decay of sulfanilic acid was followed by reversed-phase HPLC, showing a pseudo first-order kinetics. Hydroquinone and p-benzoquinone were identified as aromatic intermediates by gas chromatography-mass spectrometry and/or reversed-phase HPLC. Maleic, acetic, formic, oxalic and oxamic acids were detected as generated carboxylic acids by ion-exclusion HPLC. Ionic chromatographic analysis of electrolyzed solutions revealed that the N content of sulfanilic acid was mainly released as NH(4)(+) ion and in much smaller proportion as NO(3)(-) ion.

  15. Direct and Simultaneous Determination of Phenol, Hydroquinone and Nitrophenol at Boron-Doped Diamond Film Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHAO, Guo-Hua; TANG, Yi-Ting; LIU, Mei-Chuan; LEI, Yan-Zhu; XIAO, Xiao-E

    2007-01-01

    The electrochemical characteristics of multi-component phenolic pollutants, such as phenol (Ph), hydroquinone (HQ) and 4-nitrophenol (4-NP), were investigated on boron-doped diamond (BDD) film electrode by differential pulse voltammetry (DPV) technique. A simple and feasible platform was accordingly established for the direct and simultaneous determination of these three phenolic pollutants. Results showed that, Ph, HQ and 4-NP gave obvious oxidation peaks on BDD electrode at the potential of 1.24, 0.76 and 1.52 V, respectively. Each of them displayed good linear relationship between their oxidation peak currents and their corresponding concentrations in a rather wide range coexisting with one or two of the other phenolic pollutants. The detection limits of Ph, HQ and 4-NP were estimated to be as low as 1.82×10-6, 1.67×10-6 and 1.44×10-6mol·L-1, respectively. Therefore, a promising direct and simultaneous electrochemical determination method of multi-component phenolic pollutants in wastewater samples was constructed successfully on BDD electrode with advantages being rapid, simple, convenient, sensitive, in situ and inexpensive.

  16. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    Science.gov (United States)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-09-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin.

  17. Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

    Institute of Scientific and Technical Information of China (English)

    HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

    2009-01-01

    The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

  18. Electrochemical treatment of cork boiling wastewater with a boron-doped diamond anode.

    Science.gov (United States)

    Fernandes, Annabel; Santos, Diana; Pacheco, Maria José; Ciríaco, Lurdes; Simões, Rogério; Gomes, Arlindo C; Lopes, Ana

    2015-01-01

    Anodic oxidation at a boron-doped diamond anode of cork boiling wastewater was successfully used for mineralization and biodegradability enhancement required for effluent discharge or subsequent biological treatment, respectively. The influence of the applied current density (30-70 mA/cm2) and the background electrolyte concentration (0-1.5 g/L Na2SO4) on the performance of the electrochemical oxidation was investigated. The supporting electrolyte was required to achieve conductivities that enabled anodic oxidation at the highest current intensities applied. The results indicated that pollutant removal increased with the applied current density, and after 8 h, reductions greater than 90% were achieved for COD, dissolved organic carbon, total phenols and colour. The biodegradability enhancement was from 0.13 to 0.59 and from 0.23 to 0.72 for the BOD/COD ratios with BOD of 5 and 20 days' incubation period, respectively. The tests without added electrolyte were performed at lower applied electrical charges (15 mA/cm2 or 30 V) with good organic load removal (up to 80%). For an applied current density of 30 mA/cm2, there was a minimum of electric conductivity of 1.9 mS/cm (corresponding to 0.75 g/L of Na2SO4), which minimized the specific energy consumption.

  19. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    Science.gov (United States)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at -1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  20. Anodic oxidation of textile dyehouse effluents on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Tsantaki, Eleni; Velegraki, Theodora; Katsaounis, Alexandros [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece); Mantzavinos, Dionissios, E-mail: mantzavi@mred.tuc.gr [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece)

    2012-03-15

    The electrochemical oxidation of textile effluents over a boron-doped diamond anode was investigated in the present study. Experiments were conducted with a multi-component synthetic solution containing seventeen dyes and other auxiliary inorganics, as well as an actual effluent from a textile dyeing process. The effect of varying operating parameters, such as current density (4-50 mA/cm{sup 2}), electrolyte concentration (0.1-0.5 M HClO{sub 4}), initial solution pH (1-12.3) and temperature (22-43 Degree-Sign C), on process efficiency was investigated following changes in total organic carbon (TOC), chemical oxygen demand (COD) and color. Complete decolorization accompanied by significant mineralization (up to 85% depending on the conditions) could be achieved after 180 min of treatment. Performance was improved at higher electrolyte concentrations and lower pH values, while the effect of temperature was marginal. Energy consumption per unit mass of COD removed was favored at lower current densities, since energy was unnecessarily wasted to side reactions at higher densities.

  1. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

    2009-07-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  2. Electrochemical treatment of 2,4-dinitrophenol aqueous wastes using boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Canizares, P. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Saez, C. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Lobato, J. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Rodrigo, M.A. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain)]. E-mail: manuel.rodrigo@uclm.es

    2004-10-15

    The electrochemical oxidation of 2,4-dinitrophenol (2,4-DNP) aqueous wastes has been studied using both, bulk electrolysis and voltammetric techniques. To carry out the bulk electrolysis, a bench-scale plant with a single compartment electrochemical flow cell was used. Boron-doped diamond (BDD) materials were used as the anode and stainless steel (AISI 304) as the cathode. According to the obtained results, a simple mechanistic model has been proposed. The oxidation of 2,4-DNP leads to the appearance of phenol and quinonic compounds and to the release of the nitro groups from the aromatic ring, in a first step. In a second step, these organics are transformed into carboxylic acids (mainly maleic and oxalic acid). The process ends with the formation of carbon dioxide (CO{sub 2}). The effects of the waste characteristics (composition and pH) and of the operation parameters of the process (temperature and current density) have also been studied in this work. The complete removal of the organic compounds contained in the waste has been obtained in all essays.

  3. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative systems

    Science.gov (United States)

    Nicolau, Eduardo; González-González, Ileana; Flynn, Michael; Griebenow, Kai; Cabrera, Carlos R.

    2009-10-01

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 1.91 kg/person day of urine is produced, with urea and various salts as its main components. In this research we explore the utilization of urease (EC 3.5.1.5, 15,000 U/g) along with a platinized boron doped diamond electrode (Pt-BDD) to degrade urea. Urea is directly degraded to nitrogen by the in situ utilization of the reaction products as a strategy to increase the amount of clean water in future space expeditions. The biochemical reaction of urease produces ammonia and carbon dioxide from urea. Thereafter, ammonia is electrooxidized at the interface of the Pt-BDD producing molecular nitrogen. The herein presented system has been proven to have 20% urea conversion efficiency. This research has potential applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in situ resource recovery), while generating electricity from the same process.

  4. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Ciprian Radovan

    2008-06-01

    Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

  5. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    Science.gov (United States)

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species.

  6. Electrochemical oxidation of N-nitrosodimethylamine with boron-doped diamond film electrodes.

    Science.gov (United States)

    Chaplin, Brian P; Schrader, Glenn; Farrell, James

    2009-11-01

    This research investigated NDMA oxidation by boron-doped diamond (BDD) film electrodes. Oxidation rates were measured as a function of electrode potential, current density, and temperature using rotating disk and flow-through reactors. Final NDMA reaction products were carbon dioxide, ammonium, and nitrate, with dimethylamine and methylamine as intermediate products. Reaction rates were first-order with respect to NDMA concentration and surface area normalized oxidation rates as high as 850 +/- 50 L/m(2)-hr were observed at a current density of 10 mA/cm(2). The flow-through reactor yielded mass transfer limited reaction rates that were first-order in NDMA concentration, with a half-life of 2.1 +/- 0.1 min. Experimental evidence indicates that NDMA oxidation proceeds via a direct electron transfer at potentials >1.8 V/SHE with a measured apparent activation energy of 3.1 +/- 0.5 kJ/mol at a potential of 2.5 V/SHE. Density functional theory calculations indicate that a direct two-electron transfer can produce a stable NDMA((+2)) species that is stabilized by forming an adduct with water. The transfer of two electrons from NDMA to the electrode allows an activation-less attack of hydroxyl radicals on the NDMA((+2)) water adduct. At higher overpotentials the oxidation of NDMA occurs by a combination of direct electron transfer and hydroxyl radicals produced via water electrolysis.

  7. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  8. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

    Science.gov (United States)

    Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

    2016-05-01

    Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

  9. Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

    Directory of Open Access Journals (Sweden)

    Alessandra V. Diniz

    2003-01-01

    Full Text Available Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (BC = 6000 ppm. The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and hereafter to promote an easier electrolyte flow for wastewater treatment. The electrode performance was determined by cyclic voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4 solutions and the reversibility behavior of the Fe(CN6(3-/4- at the Ti6Al4V/Diamond electrode were studied. Also, Scaning Electron Microcopy and Raman Scattering Spectroscopy were used for morphology and diamond quality evaluation, respectively.

  10. Degradation of microcystin-RR using boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Chunyong, E-mail: batzcy3000@tom.com [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); School of Science, Nanjing Agricultural University, Nanjing 210095 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Fu Degang, E-mail: fudegang@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Gu Zhongze, E-mail: gu@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China)

    2009-12-30

    Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c{sub NaCl}) and applied current density (I{sub appl}). Full and quick removal of 0.50 {mu}g/ml MC-RR in solution was achieved when the operating conditions of c{sub NaCl} and I{sub appl} were 20 mM and 46.3 mA/cm{sup 2}, or 35 mM and 18.2 mA/cm{sup 2} respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

  11. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative applications

    Science.gov (United States)

    Nicolau, Eduardo; Gonzalez, Ileana; Nicolau, Eduardo; Cabrera, Carlos R.

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 0.06 kg/person·day of urine is produced, with urea and various salts as its main components. Current spacecraft water reclamation strategies include the utilization of not only multifiltration systems (MF) and reverse osmosis (RO), but also biological components to deal with crew urine streams. In this research we explore the utilization of urease (EC 3.5.1.5) to convert urea directly to nitrogen by the in-situ utilization of the reaction products, to increase the amount of clean water in future space expeditions. First of all, platinum was electrodeposited on boron doped diamond electrodes by cycling the potential between -0.2 V and 1.0 V in metal/0.5 M H2SO4 solution. SEM images of the electrodes showed a distribution of platinum nanoparticles ranging between 50 nm and 300 nm. The biochemical reaction of urease in nature produces ammonia and carbon dioxide from urea. Based on this, Cyclic Voltammetry experiments of an ammonium acetate solution at pH 10 were performed showing an anodic peak at -0.3 V vs. Ag/AgCl due to the ammonia oxidation. Then, a urease solution (Jack Bean) was poured into the electrochemical cell and subsequent additions of urea were performed with the potential held at -0.3 V in order to promote ammonia oxidation. Chronoamperometry data shows that with more than five urea additions the enzyme still responding by producing ammonia, which is being subsequently oxidized at the electrode surface and producing molecular nitrogen. This research has tremendous applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in-situ resource recovery), while generating electricity from the same process.

  12. Boron-doped diamond film electrode as a sensitive and selective electrochemical sensor for the determination of paracetamol

    OpenAIRE

    Švorc, Ľubomír; Sochr, Jozef; Rievaj, Miroslav; Bustin, Dušan

    2012-01-01

    A simple, sensitive and selective differential pulse voltammetry method for determination of paracetamol on a bare (unmodified) boron-doped diamond film electrode has been developed. It was found by cyclic voltammetry that paracetamol provided the quasireversible wave with oxidation peak on the forward scan about +0.90 V and smaller reduction peak on the reverse scan at +0.68 V vs. Ag/AgCl. The effect of supporting electrolyte, pH and scan rate on voltammetric response of paracetamol was stud...

  13. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis

    Science.gov (United States)

    Lewis, Grace E M; Gross, Andrew J; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-01-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming “external” process to an analyte regenerating “internal” process with benefits in selectivity and sensitivity. PMID:25735831

  14. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

    Energy Technology Data Exchange (ETDEWEB)

    Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

  15. Electrochemical Detection of Clenbuterol in Pig Liver at Pyrrole-DNA Modified Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    WU Jing; LI Xiao-li; WU Xu-mei; HUAN Shuang-yan; SHEN Guo-li; YU Ru-qin

    2005-01-01

    The direct detection of clenbuterol(CL) in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond(BDD) electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340.2, 299.8 and 166.6 mV(versus SCE), respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic voltammetric response for CL was obtained in a linear range from 3.4×10-6 to 5×10-4 mol/L with a detection limit of 8.5×10-7 mol/L. A mean recovery of 102.7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.

  16. Enhanced capacitance of composite TiO2 nanotube/boron-doped diamond electrodes studied by impedance spectroscopy.

    Science.gov (United States)

    Siuzdak, K; Bogdanowicz, R; Sawczak, M; Sobaszek, M

    2015-01-14

    We report on novel composite nanostructures based on boron-doped diamond thin films grown on top of TiO2 nanotubes. The nanostructures made of BDD-modified titania nanotubes showed an increase in activity and performance when used as electrodes in electrochemical environments. The BDD thin films (∼200-500 nm) were deposited using microwave plasma assisted chemical vapor deposition (MW PA CVD) onto anodically fabricated TiO2 nanotube arrays. The influence of boron-doping level, methane admixture and growth time on the performance of the Ti/TiO2/BDD electrode was studied in detail. Scanning electron microscopy (SEM) was applied to investigate the surface morphology and grain size distribution. Moreover, the chemical composition of TiO2/BDD electrodes was investigated by means of micro-Raman spectroscopy. The composite electrodes TiO2/BDD are characterized by a significantly higher capacitive current compared to BDD films deposited directly onto a Ti substrate. The novel composite electrode of TiO2 nanotube arrays overgrown by boron-doped diamond (BDD) immersed in 0.1 M NaNO3 can deliver a specific capacitance of 2.10, 4.79, and 7.46 mF cm(-2) at a scan rate of 10 mV s(-1) for a [B]/[C] ratio of 2k, 5k and 10k, respectively. The substantial improvement of electrochemical performance and the excellent rate capability could be attributed to the synergistic effect of TiO2 treatment in CH4 : H2 plasma and the high electrical conductivity of BDD layers. The analysis of electrochemical impedance spectra using an electric equivalent circuit allowed us to determine the surface area on the basis of the value of constant phase element.

  17. Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Shuang-Bao

    2000-01-01

    Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ~ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.

  18. Amperometric Determination of Sulfite by Gas Diffusion-Sequential Injection with Boron-Doped Diamond Electrode

    OpenAIRE

    Orawon Chailapakul; Toshihiko Imato; Narong Praphairaksit; Kulwadee Pinwattana; Chakorn Chinvongamorn

    2008-01-01

    A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU) was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution...

  19. Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces

    Directory of Open Access Journals (Sweden)

    Tine Brülle

    2011-12-01

    Full Text Available Gold nanoparticles were prepared by electrochemical deposition on highly oriented pyrolytic graphite (HOPG and boron-doped, epitaxial 100-oriented diamond layers. Using a potentiostatic double pulse technique, the average particle size was varied in the range from 5 nm to 30 nm in the case of HOPG as a support and between < 1 nm and 15 nm on diamond surfaces, while keeping the particle density constant. The distribution of particle sizes was very narrow, with standard deviations of around 20% on HOPG and around 30% on diamond. The electrocatalytic activity towards hydrogen evolution and oxygen reduction of these carbon supported gold nanoparticles in dependence of the particle sizes was investigated using cyclic voltammetry. For oxygen reduction the current density normalized to the gold surface (specific current density increased for decreasing particle size. In contrast, the specific current density of hydrogen evolution showed no dependence on particle size. For both reactions, no effect of the different carbon supports on electrocatalytic activity was observed.

  20. Voltammetric and electrochemical impedance spectroscopy characterization of a cathodic and anodic pre-treated boron doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, S. Carlos B. [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal); Oliveira-Brett, Ana Maria, E-mail: brett@ci.uc.p [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal)

    2010-06-01

    The effect of boron doped diamond (BDD) surface termination, immediately after cathodic and anodic electrochemical pre-treatments, on the electrochemical response of a BDD electrode in aqueous media and the influence of the different supporting electrolytes utilized in these pre-treatments on the final surface termination was investigated with [Fe(CN){sub 6}]{sup 4-/3-}, as redox probe, by cyclic and differential pulse voltammetry and electrochemical impedance spectroscopy. The cyclic voltammetry results indicate that the electrochemical behavior for the redox couple [Fe(CN){sub 6}]{sup 4-/3-} is very dependent on the state of the BDD surface, and a reversible response was observed after the cathodic electrochemical pre-treatment, whereas a quasi-reversible response occurred after anodic electrochemical pre-treatment. Differential pulse voltammetry in acetate buffer also showed that the potential window is very much influenced by the electrochemical pre-treatment of the BDD surface. Electroactivity of non-diamond carbon surface species (sp{sup 2} inclusions) incorporated into the diamond structure was observed after cathodic and anodic pre-treatments. Electrochemical impedance spectroscopy confirmed the cyclic voltammetry results and indicates that the BDD surface resistance and capacitance vary significantly with the electrolyte and with the electrochemical pre-treatment, caused by different surface terminations of the BDD electrode surface.

  1. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  2. Square-Wave Voltammetric Determination of Antihistaminic Drug Hydroxyzine in Pharmaceuticals Using a Boron-doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Jessica Scremin

    2016-07-01

    Full Text Available The determination of antihistaminic hydroxyzine using square-wave voltammetry and a cathodically pretreated boron-doped diamond electrode is described. The obtained analytical curve was linear in the hydroxyzine concentration range 0.50 – 20.0 mmol L–1 in 0.1 mol L–1 HCl solution, with a detection limit of 0.43 mmol L–1. Addition and recovery studies in commercial tables and liquid formulations showed excellent recovery values ranging from 94.3 % to 104 %. Furthermore, the proposed method was successfully applied in the determination of hydroxyzine in several pharmaceutical formulations and the results were in a close agreement at a 95 % confidence level with those obtained using an official potentiometric method. DOI: http://dx.doi.org/10.17807/orbital.v8i3.833

  3. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: application to stomach disorder diagnosis.

    Science.gov (United States)

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-19

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  4. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Science.gov (United States)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  5. Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

    2016-02-29

    The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

  6. Preparation of grain size controlled boron-doped diamond thin films and their applications in selective detection of glucose in basic solutions

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD).The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy.The electrochemical responses of K4Fe(CN)6 on different BDD electrodes were investigated.The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes.The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution.The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA).The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface,and the linear response range,sensitivity and the low detection limit were 0.25–10 mM,189.1 μA mmol-1 cm-2 and 25 μM (S/N=3) for glucose in the presence of AA and UA,respectively.

  7. Simultaneous voltammetric determination of paracetamol and ascorbic acid using a boron-doped diamond electrode modified with Nafion and lead films.

    Science.gov (United States)

    Tyszczuk-Rotko, Katarzyna; Bęczkowska, Ilona; Wójciak-Kosior, Magdalena; Sowa, Ireneusz

    2014-11-01

    The paper describes the fabrication and application of a novel sensor (a boron-doped diamond electrode modified with Nafion and lead films) for the simultaneous determination of paracetamol and ascorbic acid by differential pulse voltammetry. The main advantage of the lead film and polymer covered boron-doped diamond electrode is that the sensitivity of the stripping responses is increased and the separation of paracetamol and ascorbic acid signals is improved due to the modification of the boron-doped diamond surface by the lead layer. Additionally, the repeatability of paracetamol and ascorbic acid signals is improved by the application of the Nafion film coating. In the presence of oxygen, linear calibration curves were obtained in a wide concentration range from 5×10(-7) to 2×10(-4) mol L(-1) for paracetamol and from 1×10(-6) to 5×10(-4) mol L(-1) for ascorbic acid. The analytical utility of the differential pulse voltammetric method elaborated was tested in the assay of paracetamol and ascorbic acid in commercially available pharmaceutical formulations and the method was validated by high performance liquid chromatography coupled with diode array detector.

  8. Enhanced growth and osteogenic differentiation of human osteoblast-like cells on boron-doped nanocrystalline diamond thin films.

    Directory of Open Access Journals (Sweden)

    Lubica Grausova

    Full Text Available Intrinsic nanocrystalline diamond (NCD films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like, the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH(4:H(2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively. The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000 ± 14,000 and 152,000 ± 10,000 cells/cm(2, respectively, compared to 113,000 ± 10,000 cells/cm(2 on undoped NCD films. As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells.

  9. [Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes].

    Science.gov (United States)

    Wu, Juan-li; Zhang, Jia-wei; Wang, Ting; Ni, Jin-ren

    2015-07-01

    Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BUU) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours' electrolysis, with the removal percentages of 99. 48% and 98. 36%, respectively, while the mineralization ability of BDD was much stronger than that of PbO2, with the efficiency of 87. 69% for BDD and 35. 96% for PbO2. Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2, indicating that the BDD electrode surface was of greater catalytic activity, thus the generated hydroxyl radicals were more free, which was the key to its better mineralization ability.

  10. Anodic oxidation of ketoprofen-An anti-inflammatory drug using boron doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Murugananthan, M., E-mail: muruga.chem@gmail.com [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Latha, S.S.; Bhaskar Raju, G. [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Yoshihara, S. [Department of Advanced Interdisciplinary Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2010-08-15

    The mineralization of ketoprofen (KP) by anodic oxidation was studied by employing boron doped diamond (BDD) and Pt electrodes. The redox behavior of KP molecule, fouling of electrodes, generation of oxygen and active chlorine species were studied by cyclic voltammetry. The effect of electrolyte, pH of aqueous medium and applied current density on the mineralization behavior of KP was also investigated. The degradation and mineralization were monitored by UV-vis spectrophotometer and total organic carbon analyzer, respectively. The results were explained in terms of in situ generation of hydroxyl radical ({center_dot}OH), peroxodisulfate (S{sub 2}O{sub 8}{sup 2-}), and active chlorine species (Cl{sub 2}, HOCl, OCl{sup -}). The physisorbed {center_dot}OH on BDD was observed to trigger the combustion of KP in to CO{sub 2} and H{sub 2}O. The poor mineralization at both BDD and Pt anodes in the presence of NaCl as supporting electrolyte was ascribed to the formation of chlorinated organic compounds which are refractory. Complete mineralization of KP molecule was achieved using Na{sub 2}SO{sub 4} as supporting electrolyte.

  11. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    Science.gov (United States)

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements.

  12. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    Science.gov (United States)

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour).

  13. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry.

    Science.gov (United States)

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2-4.2μmolL(-1), with a detection limit of 0.065μmolL(-1).

  14. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    Science.gov (United States)

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  15. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

    2014-03-15

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  16. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    Science.gov (United States)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  17. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Vasile Ostafe

    2008-07-01

    Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  18. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode.

    Science.gov (United States)

    Radovan, Ciprian; Cinghită, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruta; Ostafe, Vasile

    2008-07-25

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an "overall paraben index", the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  19. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

    Science.gov (United States)

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-08-09

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

  20. An aptasensor for ochratoxin A based on grafting of polyethylene glycol on a boron-doped diamond microcell.

    Science.gov (United States)

    Chrouda, A; Sbartai, A; Baraket, A; Renaud, L; Maaref, A; Jaffrezic-Renault, N

    2015-11-01

    A novel strategy for the fabrication of an electrochemical label-free aptasensor for small-size molecules is proposed and demonstrated as an aptasensor for ochratoxin A (OTA). A long spacer chain of polyethylene glycol (PEG) was immobilized on a boron-doped diamond (BDD) microcell via electrochemical oxidation of its terminal amino groups. The amino-aptamer was then covalently linked to the carboxyl end of the immobilized PEG as a two-piece macromolecule, autoassembled at the BDD surface, forming a dense layer. Due to a change in conformation of the aptamer on the target analyte binding, a decrease of the electron transfer rate of the redox [Fe(CN)6](4-/3-) probe was observed. To quantify the amount of OTA, the decrease of the square wave voltammetry (SWV) peak maximum of this probe was monitored. The plot of the peak maximum against the logarithm of OTA concentration was linear along the range from 0.01 to 13.2 ng/L, with a detection limit of 0.01 ng/L. This concept was validated on spiked real samples of rice.

  1. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    Science.gov (United States)

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  2. Toward high-throughput screening of NAD(P)-dependent oxidoreductases using boron-doped diamond microelectrodes and microfluidic devices.

    Science.gov (United States)

    Oyobiki, Ryo; Kato, Taisuke; Katayama, Michinobu; Sugitani, Ai; Watanabe, Takeshi; Einaga, Yasuaki; Matsumoto, Yoshinori; Horisawa, Kenichi; Doi, Nobuhide

    2014-10-07

    Although oxidoreductases are widely used in many applications, such as biosensors and biofuel cells, improvements in the function of existing oxidoreductases or the discovery of novel oxidoreductases with greater activities is desired. To increase the activity of oxidoreductases by directed evolution, a powerful screening technique for oxidoreductases is required. In this study, we demonstrate the utility of boron-doped diamond (BDD) microelectrodes for quantitative and potentially high-throughput measurement of the activity of NAD(P)-dependent oxidoreductases. We first confirmed that BDD microelectrodes can quantify the activity of low concentrations (10-100 pM) of glucose-6-phosphate dehydrogenase and alcohol dehydrogenase with a measuring time of 1 ms per sample. In addition, we found that poisoning of BDD microelectrodes can be repressed by optimizing the pH and by adding l-arginine to the enzyme solution as an antiaggregation agent. Finally, we fabricated a microfluidic device containing a BDD electrode for the first time and observed the elevation of the oxidation current of NADH with increasing flow rate. These results imply that the combination of a BDD microelectrode and microfluidics can be used for high-throughput screening of an oxidoreductase library containing a large number (>10(6)) of samples, each with a small (nanoliter) sample volume.

  3. Synergetic antibacterial activity of reduced graphene oxide and boron doped diamond anode in three dimensional electrochemical oxidation system

    Science.gov (United States)

    Qi, Xiujuan; Wang, Ting; Long, Yujiao; Ni, Jinren

    2015-05-01

    A 100% increment of antibacterial ability has been achieved due to significant synergic effects of boron-doped diamond (BDD) anode and reduced graphene oxide (rGO) coupled in a three dimensional electrochemical oxidation system. The rGO, greatly enhanced by BDD driven electric field, demonstrated strong antibacterial ability and even sustained its excellent performance during a reasonable period after complete power cut in the BDD-rGO system. Cell damage experiments and TEM observation confirmed much stronger membrane stress in the BDD-rGO system, due to the faster bacterial migration and charge transfer by the expanded electro field and current-carrying efficiency by quantum tunnel. Reciprocally the hydroxyl-radical production was eminently promoted with expanded area of electrodes and delayed recombination of the electron-hole pairs in presence of the rGO in the system. This implied a huge potential for practical disinfection with integration of the promising rGO and the advanced electrochemical oxidation systems.

  4. Electrochemical disinfection using boron-doped diamond electrode--the synergetic effects of in situ ozone and free chlorine generation.

    Science.gov (United States)

    Rajab, Mohamad; Heim, Carolin; Letzel, Thomas; Drewes, Jörg E; Helmreich, Brigitte

    2015-02-01

    This work investigated the capability of using a boron-doped diamond (BDD) electrode for bacterial disinfection in different water matrices containing varying amounts of chloride. The feed water containing Pseudomonas aeruginosa was electrochemically treated while applying different electrode conditions. Depending on the applied current density and the exposure time, inactivation between 4- and 8-log of the targeted microorganisms could be achieved. The disinfection efficiency was driven by the generation of free chlorine as a function of chloride concentration in the water. A synergetic effect of generating both free chlorine and ozone in situ during the disinfection process resulted in an effective bactericidal impact. The formation of the undesired by-products chlorate and perchlorate depended on the water matrix, the applied current density and the desired target disinfection level. In case of synthetic water with a low chloride concentration (20 mg L(-1)) and an applied current density of 167 mA cm(-2), a 6-log inactivation of Pseudomonas aeruginosa could be achieved after 5 min of exposure. The overall energy consumption ranged between 0.3 and 0.6 kW h m(-3) depending on the applied current density and water chemistry. Electrochemical water disinfection represents a suitable and efficient process for producing pathogen-free water without the use of any chemicals.

  5. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

    2013-09-15

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  6. Electrophoretic analysis of biomarkers using capillary modification with gold nanoparticles embedded in a polycation and boron doped diamond electrode.

    Science.gov (United States)

    Zhou, Lin; Glennon, Jeremy D; Luong, John H T

    2010-08-15

    Field-amplified sample stacking using a fused silica capillary coated with gold nanoparticles (AuNPs) embedded in poly(diallyl dimethylammonium) chloride (PDDA) has been investigated for the electrophoretic separation of indoxyl sulfate, homovanillic acid (HVA), and vanillylmandelic acid (VMA). AuNPs (27 nm) exhibit ionic and hydrophobic interactions, as well as hydrogen bonding with the PDDA network to form a stable layer on the internal wall of the capillary. This approach reverses electro-osmotic flow allowing for fast migration of the analytes while retarding other endogenous compounds including ascorbic acid, uric acid, catecholamines, and indoleamines. Notably, the two closely related biomarkers of clinical significance, HVA and VMA, displayed differential interaction with PDDA-AuNPs which enabled the separation of this pair. The detection limit of the three analytes obtained by using a boron doped diamond electrode was approximately 75 nM, which was significantly below their normal physiological levels in biological fluids. This combined separation and detection scheme was applied to the direct analysis of these analytes and other interfering chemicals including uric and ascorbic acids in urine samples without off-line sample treatment or preconcentration.

  7. Pilot scale performance of the electro-oxidation of landfill leachate at boron-doped diamond anodes.

    Science.gov (United States)

    Anglada, Angela; Urtiaga, Ane; Ortiz, Inmaculada

    2009-03-15

    During the electrochemical oxidation of real wastewaters, the different species present in the effluent may interact creating complex scenarios making the prediction of the behavior of the whole system difficult. In this paper the different phenomena that occur during the electro-oxidation process of landfill leachate at a pilot plant scale with boron-doped diamond (BDD) anodes are elucidated. The total BDD anode area of the pilot plant was 1.05 m2. The evolution of the concentration of chloride ions, chlorate, and inorganic carbon and the value of pH and redox potential were found to be inter-related. In turn, the concentration of chloride affected the oxidation of ammonia, which took place through indirect oxidation by active chlorine. Moreover, chloride ions competed with organic matter to be oxidized at the anode. The effect of current density was also investigated. Organic matter and ammonia oxidation were highly influenced by the applied current density value. A change in the mechanism of organic matter oxidation was observed when high current densities were applied. Two mathematical models, previously applied to the oxidation of synthetic wastewaters in the literature, were able to predict the evolution of chemical oxygen demand and ammonia for low current density values.

  8. Assessments of the Effect of Increasingly Severe Cathodic Pretreatments on the Electrochemical Activity of Polycrystalline Boron-Doped Diamond Electrodes.

    Science.gov (United States)

    Brocenschi, Ricardo F; Hammer, Peter; Deslouis, Claude; Rocha-Filho, Romeu C

    2016-05-17

    The electrochemical response of many redox species on boron-doped diamond (BDD) electrodes can be strongly dependent on the type of chemical termination on their surface, hydrogen (HT-BDD) or oxygen (OT-BDD). For instance, on an HT-BDD electrode the [Fe(CN)6](3-/4-) redox system presents a reversible voltammetric behavior, whereas the oxidation overpotential of ascorbic acid (AA) is significantly decreased. Moreover, the electrochemical activity of BDD electrodes can be significantly affected by electrochemical pretreatments, with cathodic pretreatments (CPTs) leading to redox behaviors associated with HT-BDD. Here we report on the effect of increasingly severe CPTs on the electrochemical activity of a highly doped BDD electrode, assessed with the [Fe(CN)6](3-/4-) and AA redox probes, and on the atomic bonding structure on the BDD surface, assessed by XPS. The hydrogenation level of the BDD surface was increased by CPTs, leading to decreases of the total relative level of oxidation of the BDD surface of up to 36%. Contrary to what is commonly assumed, we show that BDD surfaces do not need to be highly hydrogenated to ensure that a reversible voltammetric behavior is obtained for Fe(CN)6](3-/4-); after a CPT, this was attained even when the total relative level of oxidation on the BDD surface was about 15%. At the same time, the overpotential for AA oxidation was confirmed as being very sensitive to the level of oxidation of the BDD surface, a behavior that might allow the use of AA as a secondary indicator of the relative atomic bonding structure on the BDD surface.

  9. Mineralization of the recalcitrant oxalic and oxamic acids by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    Science.gov (United States)

    Garcia-Segura, Sergi; Brillas, Enric

    2011-04-01

    Oxalic and oxamic acids are the ultimate and more persistent by-products of the degradation of N-aromatics by electrochemical advanced oxidation processes (EAOPs). In this paper, the kinetics and oxidative paths of these acids have been studied for several EAOPs using a boron-doped diamond (BDD) anode and a stainless steel or an air-diffusion cathode. Anodic oxidation (AO-BDD) in the presence of Fe(2+) (AO-BDD-Fe(2+)) and under UVA irradiation (AO-BDD-Fe(2+)-UVA), along with electro-Fenton (EF-BDD), was tested. The oxidation of both acids and their iron complexes on BDD was clarified by cyclic voltammetry. AO-BDD allowed the overall mineralization of oxalic acid, but oxamic acid was removed much more slowly. Each acid underwent a similar decay in AO-BDD-Fe(2+) and EF-BDD, as expected if its iron complexes were not attacked by hydroxyl radicals in the bulk. The faster and total mineralization of both acids was achieved in AO-BDD-Fe(2+)-UVA due to the high photoactivity of their Fe(III) complexes that were continuously regenerated by oxidation of their Fe(II) complexes. Oxamic acid always released a larger proportion of NH(4)(+) than NO(3)(-) ion, as well as volatile NO(x) species. Both acids were independently oxidized at the anode in AO-BDD, but in AO-BDD-Fe(2+)-UVA oxamic acid was more slowly degraded as its content decreased, without significant effect on oxalic acid decay. The increase in current density enhanced the oxidation power of the latter method, with loss of efficiency. High Fe(2+) contents inhibited the oxidation of Fe(II) complexes by the competitive oxidation of Fe(2+) to Fe(3+). Low current densities and Fe(2+) contents are preferable to remove more efficiently these acids by the most potent AO-BDD-Fe(2+)-UVA method.

  10. Determination of parabens in shampoo using high performance liquid chromatography with amperometric detection on a boron-doped diamond electrode.

    Science.gov (United States)

    Martins, Isarita; Carreira, Franciely Cristiani; Canaes, Larissa S; de Souza Campos Junior, Francisco Alberto; da Silva Cruz, Letícia Maria; Rath, Susanne

    2011-07-15

    Methylparaben (MePa), ethylparaben (EtPa) and propylparaben (PrPa) have been widely used, among others, as chemical preservatives in cosmetics, drugs and foods. As these compounds are linked with allergies, dermatitis and estrogenic properties, it is necessary to control the concentration of these substances in different matrices. The aim of this paper are: to evaluate the electrochemical behavior of parabens on the boron-doped diamond (BDD) electrode and the development of a chromatographic method, with electrochemical detection (HPLC-ED), for determination of parabens in shampoo. A BDD (8000 ppm) electrode was adapted in a thin layer mode analytical cell consisting of a stainless steel and a platinum wire as reference and auxiliary electrodes, respectively. Chromatographic separations were obtained with a reversed phase C8 analytical column and a mobile phase of 0.025 molL(-1) disodium phosphate, pH 7.0, and acetonitrile (40:60, v/v), delivered at a flow rate of 1.0 mL min(-1). Sample preparation was performed by solid phase extraction using C18 cartridges and acetonitrile for elution. Benzylparaben was employed as internal standard. The HPLC-ED method developed, using the BDD electrode, was validated for the determination of parabens in shampoos and presented adequate linearity (>0.999), in the range of 0.0125-0.500% (w/w), detectability 0.01% (w/w), precision (RSD of 2.3-9.8%) and accuracy (93.1-104.4%) and could be applied for routine quality control of shampoos containing MePa, EtPa and PrPa.

  11. Anodic behavior of sertindole and its voltammetric determination in pharmaceuticals and human serum using glassy carbon and boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Altun, Yuksel [Gazi University, Faculty of Education, Department of Chemistry, 06500 Teknikokullar, Ankara (Turkey); Dogan-Topal, Burcu; Uslu, Bengi [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey); Ozkan, Sibel A. [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey)], E-mail: ozkan@pharmacy.ankara.edu.tr

    2009-02-15

    The electrochemical oxidation of sertindole was investigated using cyclic, linear sweep voltammetry at a glassy carbon and boron-doped diamond electrodes. The aim of this study was to determine sertindole levels in serum and pharmaceutical formulations, by means of electrochemical methods. In cyclic voltammetry, depending on pH values, sertindole showed one or two irreversible oxidation responses. These two responses were found related to the different electroactive part of the molecule. Using second and sharp oxidation peak, two voltammetric methods were described for the determination of sertindole by differential pulse and square wave voltammetry at the glassy carbon and boron-doped diamond electrodes. Under optimized conditions, the current showed a linear dependence with concentration in the range between 1 x 10{sup -6} and 1 x 10{sup -4} M in acetate buffer at pH 3.5 and between 4 x 10{sup -6} and 1 x 10{sup -4} M in spiked human serum samples for both methods. The repeatability, reproducibility, selectivity, precision and accuracy of all the methods in all media were investigated and calculated. These methods were successfully applied for the analysis of sertindole pharmaceutical dosage forms and human serum samples. No electroactive interferences from the tablet excipients and endogenous substances from biological material were found.

  12. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    Science.gov (United States)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  13. Interaction of organophosphorus pesticides with DNA nucleotides on a Boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Garbellini, Gustavo S.; Uliana, Carolina V.; Yamanaka, Hideko, E-mail: gustgarb@yahoo.com.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Bauru, SP (Brazil). Dept. de Quimica Analitica

    2013-12-01

    Diamond electrode was used to evaluate the interaction of the nucleotides guanosine monophosphate (GMP) and adenosine monophosphate (AMP) with the pesticides chlorpyrifos, methamidophos and monocrotophos. Changes were observed in the currents and peak potentials of the nucleotide voltammograms in the presence of the pesticides, with dependence on the pesticide concentration (from 5.0 Multiplication-Sign 10{sup -7} to 5.0 Multiplication-Sign 10{sup -5} mol L{sup -1}) and the interaction time (from 1 min to 4 h). This is probably due to binding of the pesticides to the nitrogenous bases present in the nucleotides, which could lead to problems in the DNA replication and biological functions of nucleotides. The pesticides showed stronger interaction with AMP than with GMP. Studies of the interaction of 50 Micro-Sign g mL{sup -1} DNA with the pesticides (from 30 min to 4 h and from 1.0 Multiplication-Sign 10{sup -6} to 6.0 Multiplication-Sign 10{sup -5} mol L{sup -1}) did not reveal any peaks relating to double helix opening or DNA unwinding. (author)

  14. Electrochemical oxidation of amoxicillin in its pharmaceutical formulation at boron doped diamond (BDD electrode

    Directory of Open Access Journals (Sweden)

    Corneil Quand-Meme Gnamba

    2015-08-01

    Full Text Available In this work, voltammetric andelectrolysis experiments have been carried out on a conductive boron dopeddiamond (BDD electrode in solution containing amoxicillin in itspharmaceutical formulation. The physical characterization of the BDD surface byscanning electron microscopy (SEM reveals a polycrystalline structure withgrain sizes ranging between 0.3 and 0.6 µm. With Raman spectroscopy, BDDsurface is composed of diamons (Csp3 type carbon (Csp3and graphitic type carbon (Csp2. The electrochemical characterization of the BDD electrode in sulfuric acid electrolyte showed a wide potential window worthing 2.74 V. The oxidation of Amoxicillin showed an irreversible anodic wave on the voltammogram in the domain of water stability indicating a direct oxidation of amoxicillin at BDD surface. The treatment of Amoxicillin in the synthetic wastewaters under various constant current densities 20, 50, 100, 135 mA cm-2 on BDD showed that Amoxicillin is highly reducedunder 100 mA cm-2 reaching 92% of the Chemical Oxygen Demand (CODremoval after 5 h of electrolysis. Investigation performed in perchloric acidas supporting electrolyte led to 87% of COD removal after 5 h of electrolysis.Mineralization of amoxicillin occurs on BDD and the chemical oxygen demandremoval was higher in sulfuric acid than in perchloric acid owing to theinvolvement of the in-situ formed persulfate and perchlorate  to the degradation process mainly in the bulkof the solution. The instantaneous current efficiency (ICE presents anexponential decay indicating that the process was limited by diffusion. Thespecific energy consumed after 5h of the amoxicillin electrolysis was 0.096 kWh COD-1and 0.035 kWh COD-1 in sulfuric acid and in perchloric acidrespectively.

  15. Pulsed Amperometry for Anti-fouling of Boron-doped Diamond in Electroanalysis of β-Agonists: Application to Flow Injection for Pharmaceutical Analysis

    Directory of Open Access Journals (Sweden)

    Duangjai Nacapricha

    2006-01-01

    Full Text Available This work presents the construction and application of boron-doped diamond(BDD thin film electrode as sensor for the determination of three β-agonists, viz.salbutamol, terbutaline and clenbuterol. Although well-known as a chemically inertmaterial, BDD film however shows fouling in detection of these compounds using fixedpotentialmode amperometry. A suitable waveform for pulsed amperometric detection(PAD was developed and used to determine the agonist compounds. It was seen that thedeveloped PAD significantly refreshed the BDD surface for long-term detection in flowinjection analysis. Linear working ranges were 0.5-100 μM, 1.0-100 μM and 0.5-50 μM forsalbutamol, terbutaline and clenbuterol, respectively. The developed PAD-BDD system wasapplied to successfully determine salbutamol and terbutaline in commercial pharmaceuticalproducts. The methods were validated with a capillary electrophoresis method.

  16. Investigation of a Cu/Pd Bimetallic System Electrodeposited on Boron-Doped Diamond Films for Application in Electrocatalytic Reduction of Nitrate

    Directory of Open Access Journals (Sweden)

    Jorge T. Matsushima

    2012-01-01

    Full Text Available The Cu/Pd bimetallic system electrodeposited on boron-doped diamond (BDD films for application, as electrode material in the electrochemical reduction of nitrate was studied. The electrochemical behavior of Cu, Pd, and Cu/Pd bimetallic system was evaluated by cyclic voltammetry. From these results, the formation of the Cu/Pd composite was verified. In addition, Cu with different phases and a Cu/Pd phase in the composite were obtained. Morphological analysis by scanning electron microscopy (SEM revealed a homogeneous distribution of Cu/Pd bimetallic particles with intermediary dimensions compared to those observed in Cu or Pd electrodeposits separately. These composites were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH 9. Electrochemical measurements showed that composites with higher Cu content displayed the best electrocatalytic activity for nitrate reduction, and the Cu/Pd phase in the bimetallic system served to improve the Cu adherence on BDD electrode.

  17. Large-amplitude Fourier transformed high-harmonic alternating current cyclic voltammetry: kinetic discrimination of interfering Faradaic processes at glassy carbon and at boron-doped diamond electrodes.

    Science.gov (United States)

    Zhang, Jie; Guo, Si-Xuan; Bond, Alan M; Marken, Frank

    2004-07-01

    Significant advantages of Fourier transformed large-amplitude ac higher (second to eighth) harmonics relative to responses obtained with conventional small-amplitude ac or dc cyclic voltammetric methods have been demonstrated with respect to (i) the suppression of capacitive background currents, (ii) the separation of the reversible reduction of [Ru(NH(3))(6)](3+) from the overlapping irreversible oxygen reduction process under conditions where aerobic oxygen remains present in the electrochemical cell, and (iii) the kinetic resolution of the reversible [Ru(NH(3))(6)](3+/2+) process in mixtures of [Fe(CN)(6)](3-) and [Ru(NH(3))(6)](3+) at appropriately treated boron-doped diamond electrodes, even when highly unfavorable [Fe(CN)(6)](3-) to [Ru(NH(3))(6)](3+) concentration ratios are employed. Theoretical support for the basis of kinetic discrimination in large-amplitude higher harmonic ac cyclic voltammetry is provided.

  18. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2012-07-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  19. Electroanalysis of sulfonamides by flow injection system/high-performance liquid chromatography coupled with amperometric detection using boron-doped diamond electrode.

    Science.gov (United States)

    Preechaworapun, Anchana; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Grudpan, Kate; Motomizu, Shoji; Chailapakul, Orawon

    2006-02-28

    Sulfonamides (SAs) were electrochemically investigated using cyclic voltammetry at a boron-doped diamond (BDD) electrode. Comparison experiments were carried out using a glassy carbon electrode. The BDD electrode provided well-resolved oxidation, irreversible cyclic voltammograms and higher current signals when compared to the glassy carbon electrode. Results obtained from using the BDD electrode in a flow injection system coupled with amperometric detection were illustrated. The optimum potential from a hydrodynamic voltammogram was found to be 1100mV versus Ag/AgCl, which was chosen for the HPLC-amperometric system. Excellent results of linear range and detection limit were obtained. This method was also used for determination of sulfonamides in egg samples. The standard solutions of 5, 10, and 15ppm were spiked in a real sample, and percentage of recoveries was found to be between 90.0 and 107.7.

  20. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    Science.gov (United States)

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  1. Filmes de diamante CVD dopado com boro. Parte I . Histórico, produção e caracterização Boron-doped CVD diamond films. Part I. History, production and characterization

    Directory of Open Access Journals (Sweden)

    Rita de Cássia Mendes de Barros

    2005-03-01

    Full Text Available This review presents a brief account concerning the production, characterization and evolution of the knowledge in the area of diamond and boron-doped diamond films. The most important methods used for the growth of these films, such as chemical vapor deposition and high pressure/high temperature systems, as well as the several kinds of reactors which can be employed are reviewed. However, larger emphasis is given to the CVD method. Morphological, structural and electric properties of these films, as well as their role in the performance of voltammetric electrodes for electrochemistry and electroanalytical chemistry are also discussed.

  2. Electrochemical degradation of a real textile effluent using boron-doped diamond or {beta}-PbO{sub 2} as anode

    Energy Technology Data Exchange (ETDEWEB)

    Aquino, Jose M.; Pereira, Gabriel F. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Rocha-Filho, Romeu C., E-mail: romeu@dq.ufscar.br [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Bocchi, Nerilso; Biaggio, Sonia R. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil)

    2011-09-15

    Highlights: {center_dot} Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. {center_dot} Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl{sup -} ions. {center_dot} Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. {center_dot} PbO{sub 2} anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/{beta}-PbO{sub 2} anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L{sup -1}) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/{beta}-PbO{sub 2} anode, at any experimental condition. The best conditions are j = 5 mA cm{sup -2} and 55 {sup o}C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q{sub ap}) of only about 2 kA h m{sup -3}. Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q{sub ap} value of only 7 kA h m{sup -3}, with an energy consumption of about 30 kW h m{sup -3}. This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  3. 硼掺杂金刚石电极及其电分析应用%Electroanalytical Applications of Boron Doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    高成耀; 常明; 李晓伟; 李翠平

    2011-01-01

    一种新电极材料的发明往往会推动电分析测试的发展.硼掺杂金刚石(BDD)电极在电分析中具备宽电势窗口、低背景电流、耐腐蚀稳定性高和低吸附的特点,因而在电分析化学中引起了广泛的兴趣.本文对BDD电极的制备、表征和基本电分析性质进行了介绍,并对其在毛细管电泳、生物传感电极、痕量金属离子检测、化学修饰电极及化学需氧量快速测定方面的应用进行了综述.%Discoveries of new materials have significant impact on development of new methods and instrumentation for eletroanalysis.Boron doped diamond (BDD) electrode occupies a special place as an electrode material with interesting applications in electroanalysis because of its superior properties such as a wide potential window, low background current responses, remarkable corrosion stability, an inert surface with low adsorption.BDD electrodes have attracted the interests of many researchers for electrophoresis.The object of this article is to discuss the recent results available in the literature concerning the application of BDD electrodes to electroanalysis such as capillary electrophoresis end-column detection, electrochemical biosensor, anodic stripping voltammetry for trace metal ion detection, modified diamond electrodes and chemical oxygen demand detection.

  4. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    Science.gov (United States)

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  5. Electro-fenton and photoelectro-fenton degradation of sulfanilic acid using a boron-doped diamond anode and an air diffusion cathode.

    Science.gov (United States)

    El-Ghenymy, Abdellatif; Garrido, José Antonio; Centellas, Francesc; Arias, Conchita; Cabot, Pere Lluís; Rodríguez, Rosa María; Brillas, Enric

    2012-04-01

    The mineralization of sulfanilic acid has been studied by electro-Fenton (EF) and photoelectro-Fenton (PEF) reaction with UVA light using an undivided electrochemical cell with a boron-doped diamond (BDD) anode and an air diffusion cathode able to generate H(2)O(2). Organics were then oxidized by hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton's reaction between generated H(2)O(2) and added Fe(2+). The UVA irradiation in PEF enhanced the production of hydroxyl radicals in the bulk, accelerating the removal of organics and photodecomposed intermediates like Fe(III)-carboxylate complexes. Partial decontamination of 1.39 mM sulfanilic acid solutions was achieved by EF until 100 mA cm(-2) at optimum conditions of 0.4 mM Fe(2+) and pH 3.0. The increase in current density and substrate content led to an almost total mineralization. In contrast, the PEF process was more powerful, yielding almost complete mineralization in less electrolysis time under comparable conditions. The kinetics for sulfanilic acid decay always followed a pseudo-first-order reaction. Hydroquinone and p-benzoquinone were detected as aromatic intermediates, whereas acetic, maleic, formic, oxalic, and oxamic acids were identified as generated carboxylic acids. NH(4)(+) ion was preferentially released in both treatments, along with NO(3)(-) ion in smaller proportion.

  6. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  7. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    Science.gov (United States)

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  8. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode.

    Science.gov (United States)

    Qiu, Cuicui; Yuan, Shi; Li, Xiang; Wang, Huijiao; Bakheet, Belal; Komarneni, Sridhar; Wang, Yujue

    2014-09-15

    Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O3) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O3 process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O3, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO2 by OH generated from multiple sources in the electrolysis-O3 system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  9. Electrochemical Imprinted Polycrystalline Nickel-Nickel Oxide Half-Nanotube-Modified Boron-Doped Diamond Electrode for the Detection of L-Serine.

    Science.gov (United States)

    Dai, Wei; Li, Hongji; Li, Mingji; Li, Cuiping; Wu, Xiaoguo; Yang, Baohe

    2015-10-21

    This paper presents a novel and versatile method for the fabrication of half nanotubes (HNTs) using a flexible template-based nanofabrication method denoted as electrochemical imprinting. With use of this method, polycrystalline nickel and nickel(II) oxide (Ni-NiO) HNTs were synthesized using pulsed electrodeposition to transfer Ni, deposited by radio frequency magnetron sputtering on a porous polytetrafluoroethylene template, onto a boron-doped diamond (BDD) film. The Ni-NiO HNTs exhibited semicircular profiles along their entire lengths, with outer diameters of 50-120 nm and inner diameters of 20-50 nm. The HNT walls were formed of Ni and NiO nanoparticles. A biosensor for the detection of L-serine was fabricated using a BDD electrode modified with Ni-NiO HNTs, and the device demonstrated satisfactory analytical performance with high sensitivity (0.33 μA μM(-1)) and a low limit of detection (0.1 μM). The biosensor also exhibited very good reproducibility and stability, as well as a high anti-interference ability against amino acids such as L-leucine, L-tryptophan, L-cysteine, L-phenylalanine, L-arginine, and L-lysine.

  10. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  11. Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva-Rodriguez, M.; Hernandez-Ramirez, A. [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Peralta-Hernandez, J.M., E-mail: jperalta@fcq.uanl.mx [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Bandala, Erick R.; Quiroz-Alfaro, Marco A. [Universidad de Las Americas - Puebla, Escuela de Ingenieria y Ciencias, Sta. Catarina Martir - Cholula, Puebla 72820 (Mexico)

    2009-08-15

    This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe{sup 2+} (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe{sup 2+} concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe{sup 2+} excess in the system.

  12. Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

    OpenAIRE

    Muramatsu, Yasuji

    2009-01-01

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and mo...

  13. Degradation of 4,6-dinitro-o-cresol from water by anodic oxidation with a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Flox, Cristina [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Garrido, Jose Antonio [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Rodriguez, Rosa Maria [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Centellas, Francesc [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Cabot, Pere-Lluis [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Arias, Conchita [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)]. E-mail: brillas@ub.edu

    2005-06-10

    Anodic oxidation of 4,6-dinitro-o-cresol (DNOC) has been studied in a cell of 100 ml with a boron-doped diamond anode and a graphite cathode, both of 3-cm{sup 2} area. Solutions containing up to approximately 240 mg l{sup -1} of compound in the pH range 2.0-12.0 have been treated at 100, 300 and 450 mA between 15 and 50 deg C. Total mineralization is always achieved due to the great amount of hydroxyl radical ({center_dot}OH) produced as oxidant on the anode surface. Total organic carbon is more rapidly removed in acid medium, being the optimum pH 3.0. The degradation rate increases when temperature, current and DNOC concentration increase. However, at 100 mA depollution becomes more effective from 71 mg l{sup -1} of initial pollutant. A pseudo first-order kinetics for DNOC decay is always found by reversed-phase chromatography, with a rate constant practically independent of pH, as expected if the same electroactive species is oxidized in all media. Ion-exclusion chromatography allowed the detection of oxalic acid as the ultimate carboxylic acid. The mineralization process leads to the complete release of NO{sub 3} {sup -} ions from the destruction of nitroderivative intermediates. These products are oxidized simultaneously with accumulated oxalic acid up to the end of electrolyses. Comparative treatment of the same solutions with a Pt anode yields a quite poor depollution because of the generation of much lower amounts of reactive {center_dot}OH on its surface.

  14. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Nantaphol, Siriwan [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Chailapakul, Orawon, E-mail: corawon@chula.ac.th [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Center for Petroleum, Petrochemicals and Advanced Materials, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Siangproh, Weena, E-mail: weenasi@hotmail.com [Department of Chemistry, Faculty of Science, Srinakharinwirot University, Sukhumvit 23, Wattanna, Bangkok 10110 (Thailand)

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H{sub 2}O{sub 2} produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL{sup −1} to 270.69 mg dL{sup −1}), low detection limit (0.25 mg dL{sup −1}), and high sensitivity (49.61 μA mM{sup −1} cm{sup −2}). The precision value for ten replicates was 3.76% RSD for 1 mM H{sub 2}O{sub 2}. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6–100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time. - Highlights: • Novel PAD coupled with AgNP/BDDE for cholesterol determination was developed. • Wide linear range, low detection limit and high selectivity were achieved. • This sensor was successfully applied for cholesterol determination in bovine serum. • This platform offers the advantages of low sample/reagent consumption and low cost.

  15. 掺硼金刚石膜电极处理医院废水的研究%Study on Hospital Wastewater using Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    于鲁冀; 孔德芳; 王震; 杨强

    2013-01-01

    通过研究自制电解槽,利用掺硼金刚石膜电极(BDD)对医疗废水进行消毒实验研究.实验研究了电流密度、消毒时间及Cl-浓度对消毒效果的影响.实验结果表明:电流密度越大,消毒效果越好;消毒接触时间越长,消毒效果越好;Cl-浓度对消毒效果影响显著,医疗废水C1-质量浓度达到200 mg/L以上,消毒接触时间≥9s,出水即可满足GB 18466-2005《医疗机构水污染物排放标准》粪大肠茵群数均不得超过500 MPN/L.%Study on the disinfection effect of hospital wastewater using the boron-doped diamond film electrode (BDD) in the self-electrolyzer was carried out. The disinfection effect of current density, disinfection time and the concentration of CV were studied in this experiment. The results showed that the greater the electric current density is, the better disinfection effect will be. The longer the contact time is,the better disinfection effect will be. The concentration of Cl- is significant on the disinfection effect. When the concentration of Cl- in hospital wastewater is more than 200 mg/L as well as the disinfection contact time is more than 9 s,the effluent could meet the requirement of the Medical Institutions Sewage Discharge Standard (GB 18466—2005) in which the value of fecal coliform should be no more than 500 MPN/L.

  16. Diclofenac on boron-doped diamond electrode: from electroanalytical determination to prediction of the electrooxidation mechanism with HPLC-ESI/HRMS and computational simulations.

    Science.gov (United States)

    Lucas, Francisco Willian de S; Mascaro, Lucia H; Fill, Taicia P; Rodrigues-Filho, Edson; Franco-Junior, Edison; Homem-de-Mello, Paula; de Lima-Neto, Pedro; Correia, Adriana N

    2014-05-20

    Using square-wave voltammetry coupled to the boron-doped diamond electrode (BDDE), it was possible to develop an analytical methodology for identification and quantification of diclofenac (DCL) in tablets and synthetic urine. The electroanalytical procedure was validated, with results being statistically equal to those obtained by chromatographic standard method, showing linear range of 4.94 × 10(-7) to 4.43 × 10(-6) mol L(-1), detection limit of 1.15 × 10(-7) mol L(-1), quantification limit of 3.85 × 10(-7) mol L(-1), repeatability of 3.05% (n = 10), and reproducibility of 1.27% (n = 5). The association of electrochemical techniques with UV-vis spectroscopy, computational simulations and HPLC-ESI/HRMS led us to conclude that the electrooxidation of DCL on the BDDE involved two electrons and two protons, where the products are colorful and easily hydrolyzable dimers. Density functional theory calculations allowed to evaluate the stability of dimers A, B, and C, suggesting dimer C was more stable than the other two proposed structures, ca. 4 kcal mol(-1). The comparison of the dimers stabilities with the stabilities of the molecular ions observed in the MS, the compounds that showed retention time (RT) of 15.53, 21.44, and 22.39 min were identified as the dimers B, C, and A, respectively. Corroborating the observed chromatographic profile, dimer B had a dipole moment almost twice higher than that of dimers A and C. As expected, dimer B has really shorter RT than dimers A and C. The majority dimer was the A (71%) and the C (19.8%) should be the minority dimer. However, the minority was the dimer B, which was formed in the proportion of 9.2%. This inversion between the formation proportion of dimer B and dimer C can be explained by preferential conformation of the intermediaries (cation-radicals) on the surface.

  17. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Cuicui [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Yuan, Shi [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Xiang; Wang, Huijiao; Bakheet, Belal [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Komarneni, Sridhar [Department of Ecosystem Science and Management and Material Research Institute, 205 MRL Building, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Yujue, E-mail: wangyujue@tsinghua.edu.cn [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

    2014-09-15

    Graphical abstract: - Highlights: • Combining electrolysis with ozonation greatly enhances nitrophenol mineralization. • O{sub 3} can rapidly degrade nitrophenol to carboxylic acids in the bulk solution. • Carboxylic acids can be mineralized by ·OH generated from multiple sources in the electrolysis-O{sub 3} process. • Electrolysis and ozonation can compensate for each other's weakness on pollutant degradation. - Abstract: Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O{sub 3}) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O{sub 3} process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O{sub 3}, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO{sub 2} by ·OH generated from multiple sources in the electrolysis-O{sub 3} system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  18. Degradation of the beta-blocker propranolol by electrochemical advanced oxidation processes based on Fenton's reaction chemistry using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Isarain-Chavez, Eloy; Rodriguez, Rosa Maria; Garrido, Jose Antonio; Arias, Conchita; Centellas, Francesc; Cabot, Pere Lluis [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric, E-mail: brillas@ub.ed [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)

    2010-12-15

    The electro-Fenton (EF) and photoelectro-Fenton (PEF) degradation of solutions of the beta-blocker propranolol hydrochloride with 0.5 mmol dm{sup -3} Fe{sup 2+} at pH 3.0 has been studied using a single cell with a boron-doped diamond (BDD) anode and an air diffusion cathode (ADE) for H{sub 2}O{sub 2} electrogeneration and a combined cell containing the above BDD/ADE pair coupled in parallel to a Pt/carbon felt (CF) cell. This naphthalene derivative can be mineralized by both methods with a BDD anode. Almost overall mineralization is attained for the PEF treatments, more rapidly with the combined system due to the generation of higher amounts of hydroxyl radical from Fenton's reaction by the continuous Fe{sup 2+} regeneration at the CF cathode, accelerating the oxidation of organics to Fe(III)-carboxylate complexes that are more quickly photolyzed by UVA light. The homologous EF processes are less potent giving partial mineralization. The effect of current density, pH and Fe{sup 2+} and drug concentrations on the oxidation power of PEF process in combined cell is examined. Propranolol decay follows a pseudo first-order reaction in most cases. Aromatic intermediates such as 1-naphthol and phthalic acid and generated carboxylic acids such as maleic, formic, oxalic and oxamic are detected and quantified by high-performance liquid chromatography. The chloride ions present in the starting solution are slowly oxidized at the BDD anode. In PEF treatments, all initial N of propranolol is completely transformed into inorganic ions, with predominance of NH{sub 4}{sup +} over NO{sub 3}{sup -} ion.

  19. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  20. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

    Science.gov (United States)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

    2016-06-01

    A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the

  1. Cleaning method for regeneration of boron-doped diamond electrode%掺硼金刚石电极的再生性清洗方法研究

    Institute of Scientific and Technical Information of China (English)

    罗昊; 苟立; 包晗

    2011-01-01

    Boron-doped diamond (BDD) film electrode is of interest because of its excellent chemical and electrochemical stability,and very low adsorption of chemical species.But after repeated detection of high concentration neurotransmitters such as dopamine (DA) and serotonin (5-HT) ,the BDD electrode was fouled.Especially for the surface modified electrode,the adsorbate cannot be removed easily.Electrodes were sonicated in different cleaning agents, such as deionized water, ethanol,isopropanol.Cyclic voltammerry using Fe(CN)3-/4- redox probe confirmed less adsorbate on the surface of BDD electrode after sonication in isopropanol.The unmodified electrode with weak adsorption is easier to clean than modified one.Hydrogen microwave plasma treatment for 15 min is beneficial to both electrodes to remove surface attachment.The cleaned electrode detected the same oxidation peak and reduction peak of DA as the fresh one.%掺硼金刚石电极(BDD)是一种化学和电化学稳定性高、不易吸附污染物的电极.但是多次重复检测较高浓度神经递质如多巴胺、羟色胺后,产生了电极污染.特别是经过表面改性的电极,其表面吸附物难以简单去除.以Fe(CN)3-/4-氧化还原对为探针,通过二次水、乙醇、异丙醇等不同液体超声清洗,发现异丙醇是较好的清洗剂.未改性电极表面吸附弱,比改性电极容易清洗.氢气等离子处理15分钟,可以有效去除两类电极表面的吸附物,多巴胺检测结果表明清洗后的电极与新鲜电极测试结果接近,实现了旧电极的再生.

  2. Electrochemical detection of biapenem by a boron-doped diamond nanorod electrode%硼掺杂金刚石纳米棒电极对比阿培南的电化学检测研究

    Institute of Scientific and Technical Information of China (English)

    钟萍; 罗代兵; 任雁; 只金芳

    2011-01-01

    Biapenem is a new parenteral carbapenem that has antibacterial activity against a wide range of Gram-positive and -negative bacteria. Electroanalysis of biapenem and was made on a boron-doped diamond nanorod(BDDN ) electrode compared with a planar boron-doped diamond (BDD) electrode under the same conditions. The detection range of the BDDN electrode is wider and the sensitivity(0.038μ,A μM-1 )is higher than that of the BDD electrode(0.028μAμM-1 ). The BDDN electrode displays an amplified response than the flat BDD electrode. The BDDN electrode exhibits excellent electrochemical performance due to its higher e-lectro-active surface area and special nanostructures.%在自制的硅纳米线上采用热丝化学气相沉积方法制备了硼掺杂金刚石纳米棒电极.采用循环伏安及计时电流方法测定了在磷酸缓冲溶液中的药物比阿培南的浓度,灵敏度达到0.038μA μM-1较相同条件下制备得到的普通硼掺杂金刚石电极(0.028μA μM-1)相比有所提高.该纳米棒电极由于特殊的表面形貌,较普通硼掺杂金刚石电极表现出更优异的电化学检测性能.

  3. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  4. Highly-focused boron implantation in diamond and imaging using the nuclear reaction 11B(p, α)8Be

    Science.gov (United States)

    Ynsa, M. D.; Ramos, M. A.; Skukan, N.; Torres-Costa, V.; Jakšić, M.

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm2 and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction 11B(p, α)8Be at Ep = 660 keV. This reaction has a high Q-value (8.59 MeV for α0 and 5.68 MeV for α1) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  5. Anodic oxidation with doped diamond electrodes: a new advanced oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Alexander; Stadelmann, Manuela; Blaschke, Manfred

    2003-10-31

    Boron-doped diamond anodes allow to directly produce OH{center_dot} radicals from water electrolysis with very high current efficiencies. This has been explained by the very high overvoltage for oxygen production and many other anodic electrode processes on diamond anodes. Additionally, the boron-doped diamond electrodes exhibit a high mechanical and chemical stability. Anodic oxidation with diamond anodes is a new advanced oxidation process (AOP) with many advantages compared to other known chemical and photochemical AOPs. The present work reports on the use of diamond anodes for the chemical oxygen demand (COD) removal from several industrial wastewaters and from two synthetic wastewaters with malic acid and ethylenediaminetetraacetic (EDTA) acid. Current efficiencies for the COD removal between 85 and 100% have been found. The formation and subsequent removal of by-products of the COD oxidation has been investigated for the first time. Economical considerations of this new AOP are included.

  6. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  7. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, Leonardo S.; Moraes, Marcela C. de; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil); Cass, Quezia B., E-mail: quezia@pesquisador.cnpq.br [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil)

    2009-11-10

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25 V vs. Ag/AgCl (3.0 mol L{sup -1} KCl). Results with good linearity in the concentration ranges 50-800 and 25-400 {mu}g L{sup -1} for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0 {mu}g L{sup -1}, respectively.

  8. Phenol removal from wastewaters by electrochemical oxidation using boron doped diamond (BDD) and Ti/Ti{sub 0.7}Ru{sub 0.3}O{sub 2} DSA Registered-Sign electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto-Costa, P.H.; Ruotolo, L.A.M., E-mail: pluis@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Engenharia Quimica

    2012-10-15

    Industrial wastewater containing non-biodegradable organic pollutants consists of highly toxic effluents whose treatment is necessary due to environmental and economical restrictions. In order to treat these effluents, an electrochemical process using a dimensionally stable anode (DSA Registered-Sign ) and boron-doped diamond (BDD) electrode was studied. The performance of these electrodes for COD removal from aqueous phenol solution was evaluated in the absence and presence of different chloride concentrations. The results showed that DSA Registered-Sign could be successfully used to remove COD when high chloride concentration (3035 mg L{sup -1}Cl{sup -}) and mild current density are employed (50 mA cm{sup -2}). On the other hand, the presence of chloride did not have the same significant effect on the COD depletion rate using BDD; however, under mild conditions (50 mA cm{sup -2}, 0.190 m s{sup -1}), the addition of 607 mg L{sup -1} Cl{sup -} improved the COD removal by approximately 52% after 8 hours of electrolysis. The effect of current density (i) and flow velocity (v) were also studied, and it was verified that they have an important role on the process performance, especially when DSA Registered-Sign is used. (author)

  9. Investigation on mechanical property of HFCVD boron-doped composite diamond film%HFCVD 硼掺杂复合金刚石薄膜的机械性能研究

    Institute of Scientific and Technical Information of China (English)

    王新昶; 申笑天; 孙方宏; 沈彬

    2015-01-01

    综合不同种类单层金刚石薄膜的典型优点制备的复合金刚石薄膜具有优异的综合性能,本研究对比了 UMCD、BDMCD、UFGD 和两类新型硼掺杂复合金刚石薄膜的机械性能。研究结果表明:硼掺杂技术可有效改善金刚石薄膜的附着性能,因此 BDM-UMCD 和 BDM-UM-UFGCD 薄膜均具有较好的附着性能;表层为 UMCD 薄膜的 BDM-UMCD 薄膜(84.354 GPa)具有 UMCD 薄膜(82.058 GPa)表面硬度极高的优点,但是表面粗糙度较高(R a 304.41 nm)、表面可抛光性较差;相比之下,表层为 UFGD 薄膜的BDM-UM-UFGCD 薄膜则具有 UFGD 薄膜优异的表面光洁度(R a 104.71 nm)和表面可抛光性,此外由于硬度极高的中间层 UMCD 对于表层硬度的补充作用,该复合薄膜还具有相比于单层 UFGD 薄膜(67.925 GPa)而言较高的表面硬度(72.657 GPa)。%The composite diamond films combining typical merits of different types of monolayer diamond films show excellent comprehensive performance In this article mechanical properties of UMCD BDMCD UFGCD and two novel boron-doped composite diamond films were respectively evaluated and compared Research results showed that the boron doping technology could significantly improve the film-substrate adhesion so BDM-UMCD and BDM-UM-UFGCD films both presented favorable adhesive strength The surface layer of the BDM-UMCD film was UMCD layer consequently such the composite film had extremely high surface hardness 84 354 GPa similar to the monolayer UMCD film 82 058 GPa relatively high surface roughness R a 304 41 nm and bad polishability By contrast the BDM-UM-UFGCD film with the UFGD layer as the surface performed nice surface smoothness R a 104 71 nm and polishability as well as relatively higher surface hardness 72 657 GPa than the monolayer UFGD film 67 925 GPa attributed to the reinforcement effect of the ultra-hard middle UMCD layer.

  10. Low-stress doped ultrananocrystalline diamond

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn

    2016-10-25

    Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

  11. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  12. 掺硼金刚石薄膜电极的氨基化改性及电化学行为%Boron-doped diamond thin-film electrode modified by aminophenyl and its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    朱虹; 芶立

    2011-01-01

    Boron-doped diamond thin-film electrode was modified by the electrochemical reduction of aryl diazonium salt to attach aminophenyl group.X ray photoelectron spectroscopy(XPS)indicates the presence of N1s at the surface of electrode.By analyzing the peaks centered at 406 eV and 400 eV,XPS also suggests that nitrophenyl groups are electrochemically reduced to aminophenyl groups.The aminophenyl layer attached onto diamond thin-film electrode was demonstrated by comparing the voltammetric profiles of the Fe(CN)6-3/-4 redox couple at the electrode.The electrochemical behaviors of modified electrode were detected by differential pulse voltammetry(DPV)and cyclic voltammetry.The DPV for simultaneous determination of dopamine and ascorbic acid shows well-separated oxidation peaks with the potential difference about 0.3 V.The plasma protein adsorption at the surface modified electrode blocks electron transfer of Fe(CN)6-3/-4 redox couple.However,it does not affect the detection of dopamine.%采用重氮盐电化学还原的方法对掺硼金刚石薄膜电极进行氨基化改性,光电子能谱(XPS)证明表面N元素的存在,同时可以通过406 eV、400 eV峰强度的变化,证明硝基还原为氨基。以Fe(CN)6-3/-4氧化还原电对为探针,进一步证明了氨基层的存在。采用循环伏安法和差分脉冲伏安法研究了改性后电极的电化学行为。通过分别检测多巴胺和抗坏血酸以及它们的混合溶液,表明选用差分脉冲伏安法,氨基化改性掺硼金刚石薄膜电极能够有效分离检测两者的氧化峰,分离后两峰电势差约为0.3 V。电极表面吸附血浆蛋白后,阻碍了Fe(CN)6-3/-4氧化还原对的电子传递,但是并不妨碍多巴胺的检测。

  13. Growth mechanisms and defects in boronated CVD diamond as identified by scanning tunneling microscopy

    Science.gov (United States)

    Kreutz, T. J.; Clausing, R. E.; Heatherly, L., Jr.; Warmack, R. J.; Thundat, T.; Feigerle, C. S.; Wandelt, K.

    1995-05-01

    Boron-doped CVD-diamond films were grown in a simple hot filament reactor. A set of samples grown using various methane-in-hydrogen concentrations has been examined by scanning tunneling microscopy in air. On the diamond (111) crystal faces monoatomic steps could be observed giving evidence for layer growth. At low CH4 concentrations the layers form triangular growth spirals. Screw dislocations in the middle of the spirals serve as continuous sources of steps for the layer growth producing (111) faces of high crystal perfection. At higher methane concentrations the crystal perfection declines and the (111) crystal faces exhibit a mosaic structure. The size of the subgrains in the mosaic pattern decreases with increasing CH4 concentration. Nucleation of new layers takes place at the subgrain boundaries. The topography of (001) crystal faces did not significantly change with the methane-in-hydrogen concentration and did not allow the determination of the underlying growth mechanism.

  14. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  15. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  16. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  17. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    Science.gov (United States)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-02

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  18. Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)], E-mail: brillas@ub.edu

    2009-02-28

    The degradation of a 41 mg dm{sup -3} ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O{sub 2}-diffusion cathode. Heterogeneous hydroxyl radical ({center_dot}OH) is generated at the anode surface from water oxidation, while homogeneous {center_dot}OH is formed from Fenton's reaction between Fe{sup 2+} and H{sub 2}O{sub 2} generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of {center_dot}OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe{sup 2+} content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures.

  19. 用于航天器冷凝水处理的硼掺杂金刚石电极的制备及应用%Fabrication and Application of Boron Doped Diamond Electrodes in Condensate Water Purification in Spacecraft

    Institute of Scientific and Technical Information of China (English)

    李浩; 杨彬; 李中坚; 王传增; 韩松; 雷乐成

    2013-01-01

    Objective To effectively apply boron doped diamond (BDD) electrodes through electrochemical catalytic oxidation technology in the treatment of condensate water in spacecraft.Methods The authors manufactured a large area,equally distributed BDD electrode deposited on the Nb substrate by hot filament chemical vapor deposition (HFCVD).Then it was used to process simulated condensate water.Results Simulated condensate water 200 mL was processed with the current density of 10,13,15 mA/cm2.When the percentage of TOC removal was 80%,the required time were 150,120,100 min,and power consumption were 7.48,11.4,14.59 W,respectively.After treatment,all the alcohol type of materials in condensate water were oxidzed and no obvious delamination of the film was observed.Conclusion Compared with the PbO2 electrode and the Nb/BDD electrode,the BDD electrode has remarkable advantages in stability and treatment efficiency.%目的 通过电化学催化氧化技术,将硼掺杂金刚石(BDD)电极高效应用于航天器冷凝水的处理工作中.方法 采用热丝化学气相沉积(HFCVD)技术在铌板上制备得到了大面积、均匀分布的BDD电极,并将制得的BDD电极用于降解模拟冷凝水实验.结果 模拟冷凝水处理量为200 mL,在电流密度为10,13,15 mA/cm2条件下,达到80% TOC去除率分别需要150,120,100 min,功耗为7.48,11.4,14.59W;对处理后的冷凝水成分分析发现,冷凝水中原有的醇类物质被完全氧化;而且电极在连续运行之后也并未发现明显的剥落现象.结论 制得的BDD电极与二氧化铅电极相比,无论是在稳定性还是处理效率方面,都具有显著的优势.

  20. Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

    2009-12-31

    The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

  1. Superconducting and normal state properties of heavily hole-doped diamond synthesized at high pressure

    Directory of Open Access Journals (Sweden)

    V.A. Sidorov, E.A. Ekimov, A.V. Rakhmanina, S.M. Stishov, E.D. Bauer and J.D. Thompson

    2006-01-01

    Full Text Available Diamonds, synthesized at high pressures and high temperatures in the presence of boron, are heavily hole-doped by incorporation of boron into the diamond lattice. These diamonds become superconducting below Tc=2–9 K. Synthesis in the systems B-C and B4C-C at P=9 GPa and T=2500–2800 K result in formation of polycrystalline carbonado-like material, whereas synthesis from B-C-H gives small single crystals and intergrowth plates. Dense superconducting bodies can be prepared by compacting these single crystal particles at P=8 GPa and T=1800 K. Specific heat and resistivity measurements in magnetic fields prove the bulk nature of superconductivity in all pressure-synthesized samples and provide a consistent set of materials parameters that favor a conventional weak-coupling electron–phonon interpretation of the superconducting mechanism at high hole doping. Schottky barrier tunneling conductance spectra, obtained with contacts fabricated at the surface of these hole-doped diamonds, indicate the appearance of superconducting gap below Tc.

  2. Doping and cluster formation in diamond

    KAUST Repository

    Schwingenschlögl, Udo

    2011-09-09

    Introducing a cluster formation model, we provide a rational fundamental viewpoint for the difficulty to achieve n-type dopeddiamond. We argue that codoping is the way forward to form appropriately doped shallow regions in diamond and other forms of carbon such as graphene. The electronegativities of the codopants are an important design criterion for the donor atom to efficiently donate its electron. We propose that the nearest neighbour codopants should be of a considerably higher electronegativity compared to the donor atom. Codoping strategies should focus on phosphorous for which there are a number of appropriate codopants.

  3. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  4. Three-dimensional MgB2-type superconductivity in hole-doped diamond.

    Science.gov (United States)

    Boeri, Lilia; Kortus, Jens; Andersen, O K

    2004-12-01

    We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).

  5. The pressure sensitivity of wrinkled B-doped nanocrystalline diamond membranes

    Science.gov (United States)

    Drijkoningen, S.; Janssens, S. D.; Pobedinskas, P.; Koizumi, S.; van Bael, M. K.; Haenen, K.

    2016-10-01

    Nanocrystalline diamond (NCD) membranes are promising candidates for use as sensitive pressure sensors. NCD membranes are able to withstand harsh conditions and are easily fabricated on glass. In this study the sensitivity of heavily boron doped NCD (B:NCD) pressure sensors is evaluated with respect to different types of supporting glass substrates, doping levels and membrane sizes. Higher pressure sensing sensitivities are obtained for membranes on Corning Eagle 2000 glass, which have a better match in thermal expansion coefficient with diamond compared to those on Schott AF45 glass. In addition, it is shown that larger and more heavily doped membranes are more sensitive. After fabrication of the membranes, the stress in the B:NCD films is released by the emergence of wrinkles. A better match between the thermal expansion coefficient of the NCD layer and the underlying substrate results in less stress and a smaller amount of wrinkles as confirmed by Raman spectroscopy and 3D surface imaging.

  6. 直流电弧等离子体喷射CVD硼掺杂金刚石薄膜的制备及电化学性能研究%Electrochemical Properties of Boron Doped Diamond Films Prepared by DC Arc Plasma Jet CVD

    Institute of Scientific and Technical Information of China (English)

    张聪聪; 戴玮; 朱宁; 尹振超; 吴小国; 曲长庆

    2012-01-01

    Boron doped diamond films on silicon ( BDD) substrates were deposited by DC ARC Plasma Jet CVD (Chemical Vapor Deposition) , SEM, XRD and Raman spectroscopy were employed to analyze the morphology, crystal structure and film quality. The SEM and XRD show jointly that the samples are high-quality polycrystalline diamond films composed of micro meter-sized grains. The Raman spectrum show the 1126 cm-1,1336 cm -1and 1560 cm-1, respectively corresponds to peak due to boron incorporation, sp3 carbon peak ,and sp2 carbon peak. Study the effects of pressure and (100) BDD films were deposited at the pressure of 5500 Pa. The resistivity and carrier concentration of the (111) films measured by the Hall system, respectively corresponds to 0. 0095 Ω · cm and 1. 1 × 1020 cm-3. The electrochemical behaviors of the boron-doped diamond film electrode in sodium sulfate solution, potassium ferrocyanide/ potassium ferricyanide solution and dopamine solution are studied. The results show that the' diamond film electrode have a wide electrochemical window of about 4 V and a low background current close to zero in the aqua solution, meanwhile they have a high sensitivity, good stability and reversibility in the dopamine detection experiment which makes boron-doped diamond film obtained by DC ARC Plasma Jet CVD being an excellent material of electrochemical electrode.%采用直流电弧等离子体喷射CVD(Chemical Vapor Deposition)法在硅(100)衬底上制备了(111)占优的掺硼金刚石(BDD)薄膜,研究了压强对薄膜生长的影响,在压强为5500Pa时得到了(100)占优的金刚石薄膜,并用SEM、XRD及拉曼光谱分析了薄膜的表面形貌、晶体结构、薄膜品质.测试结果表明,掺硼金刚石膜具有较好的成膜质量.霍尔测试表明BDD的电阻率为0.0095Ω·cm,载流子浓度为1.1×1020 cm-3;研究了BDD薄膜电极在硫酸钠空白底液、铁氰化钾/亚铁氰化钾溶液和多巴胺溶液中的循环伏安曲线(CVs),发现该金刚

  7. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  8. Electro-catalytic Oxidation of Humidity Condensate Wastewater at Boron-doped Diamond in Simulated Space Station.%BDD电催化氧化处理模拟空间站冷凝废水的实验研究

    Institute of Scientific and Technical Information of China (English)

    王传增; 余青霓; 周抗寒; 陈善广; 孙德智

    2011-01-01

    目的 为验证以硼掺杂的金刚石电极(BDD)作为阳极电催化氧化处理空间站中产生的冷凝废水的技术适用性.方法 比较了分别以BDD,PbO2和RuO2作为阳极去除模拟冷凝水中TOC的性能,并单独考察BDD作为阳极时的槽电压和通O2等条件对TOC去除的影响.结果 BDD阳极的电催化氧化性能要远好于另外两种电极;增加槽电压有利于提高TOC去除率,但同时也导致了废热、析氢析氧副反应的增加,实际应用中要考虑两者的平衡点进行槽电压的选择;O2的通入加快了传质,提高了醇类向酸的转化,但降低了矿化效率;能耗需求分析显示该工艺技术能够达到节省能耗及保证水质的要求.结论 初步的实验结果显示采用BDD电催化氧化处理冷凝废水是技术可行的.%Objective To verify the feasibility of humidity condensate wastewater treatment by electro-catalytic oxidation at boron-doped diamond (BDD) in space station. Methods We utilized BDD, PbO2 and RuO2 as the anode to oxidize the simulated humidity condensate wastewater. We also investigated the effects of cell voltage and O2 feeding on TOC removal with BDD anode. Results The performance of BDD anode electro-catalytic oxidation was much better than the other two electrodes. The increase of cell voltage was conducive for TOC removal. It also increased the waste heat and occurrences of side reaction such as oxygen and hydrogen production. The optimum cell voltage should be selected by taking the equilibrium point into consideration. The feeding of 02 accelerated mass transfer, improved the conversion of alcohols to the acids, but decreased the mineralization efficiency. The energy consumption demand analysis for the process showed that it could save energy consumption and also meet the requirements of water quality. Conclusion The results demonstrate that BDD electro-catalytic oxidation is feasible for the treatment of humidity condensate wastewater.

  9. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; van Bael, Marlies K.; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I.-Nan; Haenen, Ken

    2016-07-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  10. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-07-11

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  11. Submicron cubic boron nitride as hard as diamond

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guoduan; Kou, Zili, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Lei, Li; Peng, Fang; Wang, Qiming; Wang, Kaixue; Wang, Pei; Li, Liang; Li, Yong; Wang, Yonghua [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Yan, Xiaozhi, E-mail: kouzili@scu.edu.cn, E-mail: yanxz@hpstar.ac.cn; Li, Wentao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Bi, Yan [Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Leng, Yang [Department of Mechanical Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China); He, Duanwei [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-03-23

    Here, we report the sintering of aggregated submicron cubic boron nitride (sm-cBN) at a pressure of 8 GPa. The sintered cBN compacts exhibit hardness values comparable to that of single crystal diamond, fracture toughness about 5-fold that of cBN single crystal, in combination with a high oxidization temperature. Thus, another way has been demonstrated to improve the mechanical properties of cBN besides reducing the grain size to nano scale. In contrast to other ultrahard compacts with similar hardness, the sm-cBN aggregates are better placed for potential industrial application, as their relative low pressure manufacturing perhaps be easier and cheaper.

  12. Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

    Directory of Open Access Journals (Sweden)

    Cui Xia Yan et al

    2008-01-01

    Full Text Available We have implanted boron (B ions (dosage: 5×1014 cm-2 into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.

  13. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2–5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1–5 W cm‑2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  14. Ion implantation of diamond: Damage, doping, and lift-off

    Energy Technology Data Exchange (ETDEWEB)

    Parikh, N.R.; McGucken, E.; Swanson, M.L. [North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy; Hunn, J.D.; White, C.W.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States)

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  15. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  16. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN

    Institute of Scientific and Technical Information of China (English)

    王成新; 高春晓; 张铁臣; 刘洪武; 李迅; 韩永吴; 骆继峰; 申彩霞

    2002-01-01

    A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially ona silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot tilament chemical vapourdeposition method. The ohmic electrode of Ti (50nm)/Mo (l00nm)/Au (300nm) for the p-type diamond filmand the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device wasannealed at 410°C in air for i h in order to form ohmic metal alloy. The current-voltage characteristics of theheterojunction diode were measured and the result indicated that the rectification ratio reached 10a, and theturn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

  17. 掺硼金刚石膜/碳膜平面式复合电极的制备及电化学性能%Electrochemical performance and preparation of composite planar electrode based on boron doped diamond film/carbon film

    Institute of Scientific and Technical Information of China (English)

    练发东; 芶立

    2014-01-01

    采用微波等离子体化学气相沉积法在本征硅上制备掺硼金刚石膜/碳膜平面式复合电极,其中硅片的一面为掺硼金刚石膜,另一面为碳膜。通过SEM和拉曼光谱分析了薄膜的表面形貌和成分,掺硼金刚石膜为纳米级金刚石,碳膜表面有均匀分布的凹坑;利用四探针、循环伏安法和交流阻抗法表征电极导电性和电化学性能,随着沉积时间增加,电极方阻减小;在铁氰化钾溶液中电极发生准可逆氧化还原反应,电势差为119mV,在103 Hz附近阻抗为113Ω;多巴胺的检测限为5μmol·L-1。%Boron doped diamond/carbon composite film electrode of planar configuration was prepared on the intrinsic silicon by mi-crowave plasma chemical vapor deposition. Boron doped diamond ( BDD ) film was deposited on the silicon substrate while carbon film was on the backside of the substrates. The surface morphology and composition of these films was studied by SEM and Raman spectroscopy. The SEM and Raman results show that the BDD films is nanocrystalline and there are many pits on the surface of car-bon films. The conductivity and electrochemical properties of these films were characterized by four-probe? measurement,cyclic vol-tammetry and impedance spectroscopy. The results reveal that the surface square resistance of the samples decreases with the in-crease of the depositing time. Electrochemical reaction is a quasi-reversible reaction in potassium ferricyanide solution with the po-tential difference of 119mv. The impedance of the samples at the frequency about 1000 Hz is 113Ω. The minimum detection limit of dopamine is 5μmol·L-1 .

  18. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility

    Science.gov (United States)

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Abstract Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices. PMID:28179961

  19. The local structure of transition metal doped semiconducting boron carbides

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jing; Dowben, P A [Department of Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Behlen Laboratory of Physics, University of Nebraska-Lincoln, PO Box 880111, Lincoln, NE 68588-0111 (United States); Luo Guangfu; Mei Waining [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182-0266 (United States); Kizilkaya, Orhan [J. Bennett Johnston Sr. Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge LA 70806 (United States); Shepherd, Eric D; Brand, J I [College of Engineering, and the Nebraska Center for Materials and Nanoscience, N209 Walter Scott Engineering Center, 17th and Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2010-03-03

    Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orthocarborane (closo-1,2-C{sub 2}B{sub 10}H{sub 12}) and 3d metal metallocenes were investigated by performing K-edge extended x-ray absorption fine structure and x-ray absorption near edge structure measurements. The 3d transition metal atom occupies one of the icosahedral boron or carbon atomic sites within the icosahedral cage. Good agreement was obtained between experiment and models for Mn, Fe and Co doping, based on the model structures of two adjoined vertex sharing carborane cages, each containing a transition metal. The local spin configurations of all the 3d transition metal doped boron carbides, Ti through Cu, are compared using cluster and/or icosahedral chain calculations, where the latter have periodic boundary conditions.

  20. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  1. Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

    OpenAIRE

    Takano, Y.; Nagao, M.; Kobayashi, K; Umezawa, H.; Sakaguchi, I.; Tachiki, M.; Hatano, T.; Kawarada, H.

    2004-01-01

    Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron doping, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by hig...

  2. Boron and nitrogen doping in graphene antidot lattices

    Science.gov (United States)

    Brun, Søren J.; Pereira, Vitor M.; Pedersen, Thomas G.

    2016-06-01

    Bottom-up fabrication of graphene antidot lattices (GALs) has previously yielded atomically precise structures with subnanometer periodicity. Focusing on this type of experimentally realized GAL, we perform density functional theory calculations on the pristine structure as well as GALs with edge carbon atoms substituted with boron or nitrogen. We show that p - and n -type doping levels emerge with activation energies that depend on the level of hydrogenation at the impurity. Furthermore, a tight-binding parametrization together with a Green's function method are used to describe more dilute doping. Finally, random configurations of impurities in moderately doped systems are considered to show that the doping properties are robust against disorder.

  3. Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

    2006-01-01

    Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

  4. Morphology Analysis of Nickel-boron/ diamond Electroless Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Lin; ZHU Xuanmin; ZHOU Jian; OUYANG Shixi

    2008-01-01

    The influences of mass concentration of nickel chloride hexahydrate, sodium borohydride,ethylenediamine, pH value, bath temperature on deposition rate were studied with orthogonal experiments by a series of pre-treatments on micro-diamond particle, and the optimized parameters were obtained. Both the morphology and the composition of original diamond and the diamond with Ni-B coating were analyzed by SEM and XRD respectively. The SEM image shows that the spherical Ni-B particle is coated upon diamond.XRD pattern shows that the coating compositions are Ni and Ni2B.

  5. Electronic structures of phosphorus-doped diamond films and impacts of their vacancies

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In order to better understand the bonding mechanisms of the phosphorus-doped diamond films and the influences of the phosphorus-doped concentration on the diamond lattice integrity and conductivity,we calculate the electronic structures of the phosphorus-doped diamond with different phosphorus concentrations and the density of states in the phosphorus--doped diamond films with a vacant lattice site by the first principle method.The calculation results show the phosphorus atom only affects the bonds of a few atoms in its vicinity,and the conductivity increases as the doped concentration increases.Also in the diamond lattice with a total number of 64 atoms and introducing a vacancy into the non-nearest neighbor lattice site of a phosphorus atom,we have found that both the injuries of the phosphorus-doped diamond films and the N-type electron conductivity of diamond films could be improved.

  6. Dependence of transport properties in tunnel junction on boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Shi, M.J.; Zeng, X.B.; Liu, S.Y.; Peng, W.B; Xiao, H.B; Liao, X.B.; Wang, Z.G.; Kong, G.L. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-04-15

    Boron-doped hydrogenated silicon films with different gaseous doping ratio (B{sub 2}H{sub 6}/SiH{sub 4}) were fabricated as recombination p layers in tunnel junctions. The measurements of I-V characteristics of the junctions and transparency spectra of p layer indicated that the best gaseous doping ratio of the recombination layer is 0.04, which is correlated to the degradation of short range order (SRO) in the inserted p thin film. The junction with such recombination layer has small resistance, near ohmic contact. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Synthesis and characterization of boron incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.L. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Tang, Y.; Yang, L.; Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y.; Cui, X. [Canadian Light Source Inc., 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada)

    2015-08-31

    Boron incorporated diamond-like carbon (B-DLC) (up to 8 wt.% boron) thin films were synthesized on silicon wafers using biased target ion beam deposition technique, where diamond-like carbon (DLC) was deposited by ion beam deposition and boron (B) was simultaneously incorporated by biased target sputtering of a boron carbide (B{sub 4}C) target under different conditions. Pure DLC films and B–C films were also synthesized by ion beam deposition and biased target sputtering of B{sub 4}C under similar conditions, respectively, as reference samples. The microstructure and mechanical properties of the synthesized films have been characterized by various technologies. It has been found that B exists in different states in B-DLC, including carbon-rich and B-rich boron carbides, boron suboxide and boron oxide, and the oxidation of B probably occurs during the film deposition. The incorporation of B into DLC leads to the increase of sp{sup 3} bonded carbon in the films, the increase of both film hardness and elastic modulus, and the decrease of both surface roughness and friction coefficient. Furthermore, the content of sp{sup 3} bonded carbon, film hardness and elastic modulus increase, and the film surface roughness and friction coefficient decrease with the increase of B-rich carbide in the B-DLC films. - Highlights: • Biased target ion beam deposition technique is promising to produce high quality DLC based thin films; • Boron exists in different states in B-DLC thin films; • The incorporation of B to DLC with different levels leads to improved film properties; • The fraction of sp{sup 3} bonded C in B-DLC thin films increase with the increase of B-rich carbide content in the films.

  8. Superconductivity in CVD diamond films.

    Science.gov (United States)

    Takano, Yoshihiko

    2009-06-24

    A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and magnetic measurements and so on. This review elucidates the physical properties and mechanism of diamond superconductor as a special superconductivity that occurs in semiconductors.

  9. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  10. Study of helium embrittlement in boron doped EUROFER97 steels

    Science.gov (United States)

    Gaganidze, E.; Petersen, C.; Aktaa, J.

    2009-04-01

    To simulate helium effects in Reduced Activation Ferritic/Martensitic steels, experimental heats ADS2, ADS3 and ADS4 with the basic composition of EUROFER97 (9%Cr-WVTa) were doped with different contents of natural boron and separated 10B-isotope (0.008-0.112 wt.%) and irradiated in High Flux Reactor (HFR) Petten up to 16.3 dpa at 250-450 °C and in Bor-60 fast reactor in Dimitrovgrad up to 31.8 dpa at 332-338 °C. The embrittlement and hardening are investigated by instrumented Charpy-V tests with subsize specimens. Complete burn-up of 10B isotope under neutron irradiation in HFR Petten led to generation of 84, 432 and 5580 appm He and partial boron-to-helium transformation in Bor-60 led to generation of 9, 46, 880 appm He in ADS2, ADS3 and ADS4 heats, respectively. At low irradiation temperatures Tirr ⩽ 340 °C the boron doped steels show progressive embrittlement with increasing helium amount. Irradiation induced DBTT shift of EUROFER97 based heat doped with 1120 wppm separated 10B isotope could not be quantified due to large embrittlement found in the investigated temperature range. At Tirr ⩽ 340 °C helium induced extra embrittlement is attributed to material hardening induced by helium bubbles and described in terms of phenomenological model.

  11. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  12. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    Science.gov (United States)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  13. High efficiency diamond solar cells

    Science.gov (United States)

    Gruen, Dieter M.

    2008-05-06

    A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.

  14. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  15. Study of nitrogen doping behavior in diamond film

    Institute of Scientific and Technical Information of China (English)

    LI Ming-ji; YANG Bao-he; SUN Da-zhi; JIN Zeng-sun

    2008-01-01

    Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique.The quality and nitrogen impurity states of the diamond films are characterized by SEM, raman spectroscopy, XPS and EPRspectroscopy, respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures,the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore, in thefilms, it can be observed that nitrogen impurity exists in the forms of Ns0, [N-V]0 and [N-V]-1. The contents of [N-V]0 and[N-V]-1 are lower when the nitrogen flow rate is relatively high, and the concentration of Ns0 varies from 15 ppm to 483 ppm.

  16. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Energy Technology Data Exchange (ETDEWEB)

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  17. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    OpenAIRE

    Da-Young Yeom; Woojin Jeon; Nguyen Dien Kha Tu; So Young Yeo; Sang-Soo Lee; Bong June Sung; Hyejung Chang; Jung Ah Lim; Heesuk Kim

    2015-01-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of ...

  18. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation

    NARCIS (Netherlands)

    Sarubbi, F.; Nanver, L.K.; Scholtes, T.L.M.

    2006-01-01

    A new doping technique is presented that uses a pure boron atmospheric/low-pressure chemical vapor deposition (AP/LPCVD) in a commercially available epitaxial reactor to form less than 2-nm-thick δ-doped boron-silicide (BxSi) layers on the silicon surface. For long exposure B segregates at the surfa

  19. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors...

  20. β-NMR study of boron in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Izumikawa, T., E-mail: izumika@med.niigata-u.ac.jp [Niigata University, Isotope Center (Japan); Mihara, M.; Matsuta, K.; Fukuda, M. [Osaka University, Department of Physics (Japan); Ohtsubo, T.; Ohya, S. [Niigata University, Graduate School of Science (Japan); Minamisono, T. [Osaka University, Department of Physics (Japan)

    2015-04-15

    A β-NMR study of {sup 12}B implanted in diamond was performed in order to investigate the implantation sites and the defects. The maintained polarization of {sup 12}B was measured by use of widely modulated rf around the Larmor frequency (ν = ν{sub L} ± 200 kHz) as a function of temperature from 160 K to 320 K. The observed polarization was found to be almost constant at about 0.9 % in this temperature range. The initial polarization for this system was obtained as about 8.1 %. Therefore about 10 % of the implanted {sup 12}B maintained its polarization in this frequency range. Conversely, about 90 % of the implanted {sup 12}B was undetected in the present experiment.

  1. Phenol degradation by anodic oxidation on boron-doped diamond electrode combining TiO2 Photocatalysis%掺硼金刚石电极结合二氧化钛光催化阳极氧化降解苯酚

    Institute of Scientific and Technical Information of China (English)

    戎非; 顾林娟; 邱烨静; 付德刚; 吴巍

    2010-01-01

    Boron-doped diamond (BDD) electrocatalysis is combined with photocatalysis using titanium dioxide (TiO2) as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Different methods involving BDD and/or TiO2 during the degradation processes are compared. Parameters such as the currency density and initial concentration are varied in order to determine their effects on the oxidation process. Moreover, the degradation kinetics of phenol is experimentally studied. The results reveal the superiority of series combination of BDD and TiO2, especially the treatment process of electrocatalysis and succedent photocatalysis, and the optimum working currency density for electrocatalysis is 25.48 mA/cm2. The removal rate decreases with the increase in the initial phenol concentration and the degradation reaction follows quasi-first-order kinetics equation.%采用二氧化钛光催化结合掺硼金刚石电催化来提高污染物氧化效率.以苯酚作为模型废水污染物,分别比较了采用BDD电催化和TiO2光催化以及两者结合方法的降解过程,研究了电流密度和初始浓度等条件对降解效果的影响,并进行了反应动力学讨论.实验结果表明:与单独处理相比, BDD和TiO2组合处理方法拥有较优的苯酚去除效果,尤其是先电解后光催化的方式,其最优工作电流密度为25.48 mA/cm2,并且随着苯酚初始浓度增加,去除率随之下降.动力学研究表明反应符合准一级动力学方程.

  2. 纳米金颗粒在掺硼金刚石薄膜电极表面的自组装及其电化学性能分析∗%Self-assembly of gold nanoparticles onto boron-doped diamond electrode and its electrochemical properties

    Institute of Scientific and Technical Information of China (English)

    崔凯; 汪家道; 冯东; 陈大融

    2015-01-01

    Citrate-coated gold nanoparticles (diameter about 18 nm)were absorbed onto boron-doped diamond (BDD)film electrode through a self-assembly process after the surface of the anodized BDD film was animated. By changing the pH of gold nanoparticles solution,we synthesized gold nanoparticles modified BDD electrode with uniform distribution and high coverage (about 30%) of gold nanoparticles.In the system of [Fe (CN)6 ]3 -/4- ,through AC impedance analysis and cyclic voltammetry analysis,we find that heterogeneous elec-tron transfer rate constant (K app )of gold nanoparticles modified BDD electrode increased from 2.8 × 10 -4 to 8.9×10 -4 .After the BDD electrode was modified with gold nanoparticles,the oxidation potential of dopamine (DA)reduced from 0.54 to 0.3 V,and the oxidation peak was improved,confirming that gold nanoparticles have catalytic effect on DA.%对阳极氧化后的掺硼金刚石(BDD)薄膜进行表面氨基化处理,使柠檬酸根包裹的纳米金颗粒(粒径约18 nm)自组装到 BDD 薄膜的表面.通过改变纳米金溶液的 pH 值,在 BDD 薄膜表面制备出二维形貌分布均匀且相对覆盖度高(约30%)的纳米金颗粒.在[Fe(CN)6]3-/4-体系中,通过循环伏安分析和交流阻抗分析实验发现,纳米金颗粒修饰后的 BDD 电极表面异相电子转移速率常数(K app )由2.8×10-4提高到8.9×10-4.纳米金颗粒修饰的 BDD 电极对多巴胺的氧化电位由0.54 V 减小到0.3 V,且氧化峰峰值得到提高,证实了纳米金颗粒对多巴胺的催化作用.

  3. The corrosion resistance of zinc coatings in the presence of boron-doped detonation nanodiamonds (DND)

    Science.gov (United States)

    Burkat, G. K.; Alexandrova, G. S.; Dolmatov, V. Yu; Osmanova, E. D.; Myllymäki, V.; Vehanen, A.

    2017-02-01

    The effect of detonation nanodiamonds, doped with boron (boron-DND) in detonation synthesis on the process of zinc electrochemical deposition from zincate electrolyte is investigated. It is shown that the scattering power (coating uniformity) increases 2-4 times (depending on the concentration of DND-boron electrolyte conductivity does not change, the corrosion resistance of Zn- DND -boron coating increases 2.6 times in 3% NaCl solution (corrosion currents) and 3 times in the climatic chamber.

  4. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  5. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  6. Effect of Carbon Doping on the Electronic Structure and Elastic Properties of Boron Suboxide

    Science.gov (United States)

    2015-06-01

    ARL-TR-7318 ● JUNE 2015 US Army Research Laboratory Effect of Carbon Doping on the Electronic Structure and Elastic Properties...Laboratory Effect of Carbon Doping on the Electronic Structure and Elastic Properties of Boron Suboxide by Amol B Rahane and Vijay Kumar Dr...SUBTITLE Effect of Carbon Doping on the Electronic Structure and Elastic Properties of Boron Suboxide 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

  7. Boron doped simulated graphene field effect transistor model

    Science.gov (United States)

    Sharma, Preetika; Kaur, Inderpreet; Gupta, Shuchi; Singh, Sukhbir

    2016-05-01

    Graphene based electronic devices due to its unique properties has transformed electronics. A Graphene Field Effect Transistor (GNRFET) model is simulated in Virtual Nano Lab (VNL) and the calculations are based on density functional theory (DFT). Simulations were performed on this pristine GNRFET model and the transmission spectrum was observed. The graph obtained showed a uniform energy gap of +1 to -1eV and the highest transmission peak at -1.75 eV. To this pristine model of GNRFET, doping was introduced and its effect was seen on the Fermi level obtained in the transmission spectrum. Boron as a dopant was used which showed variations in both the transmission peaks and the energy gap. In this model, first the single boron was substituted in place of carbon and Fermi level showed an energy gap of 1.5 to -0.5eV with the highest transmission peak at -1.3 eV. In another variation in the model, two carbon atoms were replaced by two boron atoms and Fermi level shifted from 2 to 0.25eV. In this observation, the highest transmission peak was observed at -1(approx.). The use of nanoelectronic devices have opened many areas of applications as GFET is an excellent building block for electronic circuits, and is being used in applications such as high-performance frequency doublers and mixers, digital modulators, phase detectors, optoelectronics and spintronics.

  8. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Torigoe, Kazuhisa, E-mail: ktorigoe@sumcosi.com; Fujise, Jun; Ono, Toshiaki [Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256 (Japan); Nakamura, Kozo [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  9. Characterisation of sputter deposited niobium and boron interlayer in the copper-diamond system.

    Science.gov (United States)

    Hell, J; Chirtoc, M; Eisenmenger-Sittner, C; Hutter, H; Kornfeind, N; Kijamnajsuk, P; Kitzmantel, M; Neubauer, E; Zellhofer, K

    2012-09-15

    In most metal matrix composites (MMCs) interfaces are decisive but hard to manipulate. Especially copper-carbon composites can exhibit excellent mechanical and thermal properties only if the Cu/C interface is modified by an optimised interlayer. Due to the excellent thermal conductivity and mechanical stability of diamond this form of carbon is preferred as reinforcement in heat sink materials (copper-diamond composite) which are often subjected to severe thermal and mechanical loads. In the present case niobium and boron interlayers of various thicknesses were deposited on diamond and vitreous carbon substrates by magnetron sputter deposition. After the coverage of all samples by a copper film, a part of the samples was subjected to heat treatment for 30 min at 800 °C under high vacuum (HV) to simulate the thermal conditions during the production of the composite material by uniaxial hot pressing. De-wetting during heat treatment leads to the formation of holes or humps in the Cu coating. This effect was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). A comparison of time-of-flight secondary ion mass spectroscopy (TOF SIMS) profiles of heat treated samples with those of as deposited ones showed the influence of interdiffusion during the heating process. Diffusion behaviour and chemical composition of the interface were also studied by cross sectional transmission electron microscopy (X-TEM) investigations using focused ion beam (FIB) cut samples. The thermal contact resistance (TCR) of the interface was calculated from results obtained from modulated infrared radiometry (IR). Thin interlayers suppressed de-wetting most effectively and consequently the TCR at the Cu-diamond interface was found to decrease. Therefore they are promising candidates for optimising the Cu-diamond interface.

  10. Study on the Microstructure and Electrical Properties of Boron and Sulfur Codoped Diamond Films Deposited Using Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Zhang Jing

    2014-01-01

    Full Text Available The atomic-scale microstructure and electron emission properties of boron and sulfur (denoted as B-S codoped diamond films grown on high-temperature and high-pressure (HTHP diamond and Si substrates were investigated using atom force microscopy (AFM, scanning tunneling microscopy (STM, secondary ion mass spectroscopy (SIMS, and current imaging tunneling spectroscopy (CITS measurement techniques. The films grown on Si consisted of large grains with secondary nucleation, whereas those on HTHP diamond are composed of well-developed polycrystalline facets with an average size of 10–50 nm. SIMS analyses confirmed that sulfur was successfully introduced into diamond films, and a small amount of boron facilitated sulfur incorporation into diamond. Large tunneling currents were observed at some grain boundaries, and the emission character was better at the grain boundaries than that at the center of the crystal. The films grown on HTHP diamond substrates were much more perfect with higher quality than the films deposited on Si substrates. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate n-type conduction.

  11. BDD 和 PbO2电极电化学氧化苯并三氮唑的对比研究%Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes

    Institute of Scientific and Technical Information of China (English)

    伍娟丽; 张佳维; 王婷; 倪晋仁

    2015-01-01

    分别构建了以掺硼金刚石膜电极(BDD)和二氧化铅电极(PbO2)为阳极的电化学体系,对比考察了两种电极对难降解有机污染物苯并三氮唑(BTA)的降解及体系的矿化效果,并从电极产生羟基自由基(.OH)的数量与形态角度深入探讨了影响电极矿化能力大小的内在因素.结果表明:①BDD 和 PbO2电极均对 BTA 有较好的降解效果,电解12 h 后 BTA 去除率分别为99.48℅和98.36℅,但 BDD 电极的矿化能力明显强于 PbO2电极,电解12 h 后矿化率分别为87.69℅和35.96℅;②BDD体系阳极.OH产生速率和阴极 H2产生速率均低于 PbO2体系,即表面活性位点数量少于 PbO2电极,因此.OH数量不是决定矿化能力大小的关键;③BDD 电极表面吸附氧活性更强,结合能(532.37eV)大于 PbO2(530.74eV),且表面吸附层更薄,产生的.OH形态更自由,是决定其具有更大矿化能力的关键因素.%Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BDD) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours’ electrolysis, with the removal percentages of 99. 48℅ and 98. 36℅ , respectively, while the mineralization ability of BDD was much stronger than that of PbO2 , with the efficiency of 87. 69℅ for BDD and 35. 96℅ for PbO2 . Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2 , indicating that the BDD electrode surface was of greater catalytic

  12. Boron-doped cobalt oxide thin films and its electrochemical properties

    Science.gov (United States)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  13. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  14. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  15. Theoretical Calculation on Optimum Si-doping Content in Boron Carbide Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The theoretical expression of the relationship between optimum doping content and crystal structure is presented as well as the preparation methods. By using this expression, the optimum doping content of silicon-doped boron carbide thin film is calculated. The quantitative calculation value is consistent with the experimental results. This theoretical expression is also appropriate to resolve the optimum doping content for other electric materials.

  16. Boron-doped silicon surfaces from $B_2H_6$ passivated by ALD $Al_2O_3$ for solar cells

    NARCIS (Netherlands)

    Mok, K.R.C. (Caroline); Loo, van de Bas W.H.; Vlooswijk, Ard H.G.; Kessels, W.M.M. (Erwin); Nanver, Lis K.

    2015-01-01

    A p+-doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B2H6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was

  17. Hole states in diamond p-delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

    2009-05-01

    The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

  18. Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

    Science.gov (United States)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and carbon doped zigzag and armchair Boron Nitride Nanotubes (BNNTs) have been investigated based on tight binding formalism. It was found that the band gap is reduced due to substitution of Boron or Nitrogen atoms by carbon atoms and the doping effects of B- and N-substituted BNNTs are different. The applied electric field converts the carbon doped BNNTs from semiconductor to metal. The gap energy reduction shows an identical dependence to electric field and doping for both armchair and zigzag carbon doped BNNTs. Our results indicate that the band gap of carbon doped BNNTs is a function of the Impurity concentration, electric field strength and the direction between the electric field and dopant location. The band gap for C-doped BNNTs with four carbon atoms decreases linearly but for two carbon atoms, it is constant at first then decreases linearly.

  19. High temperature surface Brillouin scattering study of mechanical properties of boron-doped epitaxial polysilicon

    Directory of Open Access Journals (Sweden)

    B. A. Mathe

    2017-02-01

    Full Text Available A study of the mechanical properties of a boron-doped epitaxial polysilicon layer deposited on a Si (100 substrate specimen has been carried out by surface Brillouin scattering at high temperatures. This type of specimen is widely used in micro-electro-mechanical systems (MEMS. By accumulating spectra with the Rayleigh mode and the Lamb continuum the isotropic elastic constants C44 and C11 were obtained, from which the values of the bulk, shear and Young’s moduli and Poisson’s ratio for the layer were determined over a range of temperatures from 20 °C to 110 °C. By contrast, an examination of the literature on polycrystalline silicon shows that other methods each provide a limited range of the above properties and thus additional experiments and techniques were needed. The SBS method is applicable to other polycrystalline materials such as silicon carbide, silicon nitride, silicon germanium and amorphous diamond that have also been used for MEMS applications.

  20. Local atomic and electronic structure of boron chemical doping in monolayer graphene.

    Science.gov (United States)

    Zhao, Liuyan; Levendorf, Mark; Goncher, Scott; Schiros, Theanne; Pálová, Lucia; Zabet-Khosousi, Amir; Rim, Kwang Taeg; Gutiérrez, Christopher; Nordlund, Dennis; Jaye, Cherno; Hybertsen, Mark; Reichman, David; Flynn, George W; Park, Jiwoong; Pasupathy, Abhay N

    2013-10-09

    We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant. Density functional theory calculations indicate that boron dopants interact strongly with the underlying copper substrate while nitrogen dopants do not. The local bonding differences between graphitic boron and nitrogen dopants lead to large scale differences in dopant distribution. The distribution of dopants is observed to be completely random in the case of boron, while nitrogen displays strong sublattice clustering. Structurally, nitrogen-doped graphene is relatively defect-free while boron-doped graphene films show a large number of Stone-Wales defects. These defects create local electronic resonances and cause electronic scattering, but do not electronically dope the graphene film.

  1. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  2. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  3. First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon

    Science.gov (United States)

    Bahadur, Amar; Verma, Mohan L.; Mishra, Madhukar

    2015-04-01

    Using first principle calculation, we investigate the structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon (ZBNNR). Our results show that the shift in position of silicon doping with respect to the ribbon edge causes change in the structural geometry, electronic structure and magnetization of ZBNNR. The band gap of silicon doped ZBNNR is found to become narrower as compared to that of perfect ZBNNR. We find that band gap and magnetic moment of ZBNNR can be tuned by substitutional silicon doping position and doping concentration.

  4. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  5. Using Si-doped diamond plate of sandwich type for spatial profiling of laser beam

    Science.gov (United States)

    Shershulin, V. A.; Samoylenko, S. R.; Sedov, V. S.; Kudryavtsev, O. S.; Ralchenko, V. G.; Nozhkina, A. V.; Vlasov, I. I.; Konov, V. I.

    2017-02-01

    We demonstrated a laser beam profiling method based on imaging of the laser induced photoluminescence of a transparent single-crystal diamond plate. The luminescence at 738 nm is caused by silicon-vacancy color centers formed in the epitaxial diamond film by its doping with Si during CVD growth of the film. The on-line beam monitor was tested for a cw laser emitting at 660 nm wavelength.

  6. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  7. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    Gu Li-Ping; Tang Chun-Jiu; Jiang Xue-Fan; J.L.Pintob

    2011-01-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHX (x = 1,2,3) growth species for adsorption sites.

  8. Synthesis, Characterization, and Evaluation of Boron-Doped Iron Oxides for the Photocatalytic Degradation of Atrazine under Visible Light

    Directory of Open Access Journals (Sweden)

    Shan Hu

    2012-01-01

    Full Text Available Photocatalytic degradation of atrazine by boron-doped iron oxides under visible light irradiation was investigated. In this work, boron-doped goethite and hematite were successfully prepared by sol-gel method with trimethylborate as boron precursor. The powders were characterized by XRD, UV-vis diffuse reflectance spectra, and porosimetry analysis. The results showed that boron doping could influence the crystal structure, enlarge the BET surface area, improve light absorption ability, and narrow their band-gap energy. The photocatalytic activity of B-doped iron oxides was evaluated in the degradation of atrazine under the visible light irradiation, and B-doped iron oxides showed higher atrazine degradation rate than that of pristine iron oxides. Particularly, B-doped goethite exhibited better photocatalytic activity than B-doped hematite.

  9. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, Tatsunori, E-mail: s1130011@jaist.ac.jp [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Koyama, Koichi [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Matsumura, Hideki [Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2015-01-30

    We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 °C or even at 80 °C by using species generated by catalytic cracking reaction of phosphine (PH{sub 3}) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B{sub 2}H{sub 6}) molecules. Dependency of properties of doped layers on catalyzer temperature (T{sub cat}) and substrate temperature (T{sub s}) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at T{sub s} = 80 °C for T{sub cat} over 800 °C when c-Si is exposed to B{sub 2}H{sub 6} cracked species for a few minutes, and that the heat of substrate over 300 °C is likely to help for B doping contrary to P doping.

  10. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  11. Electronic properties of graphene nanoribbon doped by boron/nitrogen pair: a first-principles study

    Institute of Scientific and Technical Information of China (English)

    Xiao Jin; Yang Zhi-Xiong; Xie Wei-Tao; Xiao Li-Xin; Xu Hui; OuYang Fang-Ping

    2012-01-01

    By using the first-principles calculations,the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR.The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover,B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR.This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.

  12. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  13. Generation of microdischarges in diamond substrates

    Science.gov (United States)

    Mitea, S.; Zeleznik, M.; Bowden, M. D.; May, P. W.; Fox, N. A.; Hart, J. N.; Fowler, C.; Stevens, R.; StJ Braithwaite, N.

    2012-04-01

    We report the generation of microdischarges in devices composed of microcrystalline diamond. Discharges were generated in device structures with microhollow cathode discharge geometries. One structure consisted of an insulating diamond wafer coated with boron-doped diamond layers on both sides. A second structure consisted of an insulating diamond wafer coated with metal layers on both sides. In each case, a single sub-millimetre hole was machined through the conductor-insulator-conductor structure. The discharges were generated in a helium atmosphere. Breakdown voltages were around 500 V and discharge currents in the range 0.1-2.5 mA were maintained by a sustaining dc voltage of 300 V.

  14. Picosecond pulsed laser processing of polycrystalline diamond and cubic boron nitride composite materials

    Science.gov (United States)

    Warhanek, Maximilian G.; Pfaff, Josquin; Meier, Linus; Walter, Christian; Wegener, Konrad

    2016-03-01

    Capabilities and advantages of laser ablation processes utilizing ultrashort pulses have been demonstrated in various applications of scientific and industrial nature. Of particular interest are applications that require high geometrical accuracy, excellent surface integrity and thus tolerate only a negligible heat-affected zone in the processed area. In this context, this work presents a detailed study of the ablation characteristics of common ultrahard composite materials utilized in the cutting tool industry, namely polycrystalline diamond (PCD) and polycrystalline cubic boron nitride composite (PCBN). Due to the high hardness of these materials, conventional mechanical processing is time consuming and costly. Herein, laser ablation is an appealing solution, since no process forces and no wear have to be taken into consideration. However, an industrially viable process requires a detailed understanding of the ablation characteristics of each material. Therefore, the influence of various process parameters on material removal and processing quality at 10 ps pulse duration are investigated for several PCD and PCBN grades. The main focus of this study examines the effect of different laser energy input distributions, such as pulse frequency and burst pulses, on the processing conditions in deep cutting kerfs and the resulting processing speed. Based on these results, recommendations for efficient processing of such materials are derived.

  15. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  16. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  17. Detecting CO, NO and NO2 gases by Boron-doped graphene nanoribbon molecular devices

    Science.gov (United States)

    Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

    2016-07-01

    Combining nonequilibrium Green's function method and density functional theory, an azulene-like dipole molecule sandwiched between two graphene nanoribbon (GNR) electrodes are explored to gas sensors. Both the pristine zigzag edged GNR and Boron-doped armchair-edged GNR are considered in this study. It shows that certain specific toxic molecules CO, NO and NO2 would adsorb on the doped Boron atoms of the GNR, resulting in a dramatic change in the current-voltage profile. Changes in the subbands of electrodes, induced by gas adsorption, are responsible for the variation of current. The devices are thus demonstrated to be sensitive nanosensors for these toxic gases.

  18. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Auttasit Tubtimtae; Suwanna Sheangliw; Kritsada Hongsith; Supab Choopun

    2014-10-01

    We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of ( ℎ )2 vs ℎ with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

  19. First-principles study of palladium atom adsorption on the boron- or nitrogen-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Guoxiang [College of Physics and Information Technology, Shaanxi Normal University, Xi' an 710062, Shaanxi (China); School of Science, Xi' an Shiyou University, Xi' an 710065, Shaanxi (China); Zhang Jianmin, E-mail: jianm_zhang@yahoo.co [College of Physics and Information Technology, Shaanxi Normal University, Xi' an 710062, Shaanxi (China); Wang Doudou [Institute of Telecommunication Engineering of the Air Force Engineering University (AFEU1), Xi' an 710077, Shaanxi (China); Xu Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049, Shaanxi (China)

    2009-11-15

    We have performed first-principles calculation to investigate the adsorption of a single palladium atom on the surface of the pristine and boron- or nitrogen-doped carbon nanotubes (CNTs). The results show that for the adsorption of a single palladium atom on the pristine CNT surface, the most stable site is Bridge1 site above the axial carbon-carbon bond. Either boron- or nitrogen-doped CNTs can assist palladium surface adsorption, but the detailed mechanisms are different. The enhanced palladium adsorption on boron-doped CNT is attributed to the palladium d orbital strongly hybridized with both boron p orbital and carbon p orbital. The enhancement in palladium adsorption on nitrogen-doped CNT results from activating the nitrogen-neighboring carbon atoms due to the large electron affinity of nitrogen. Furthermore, the axial bond is preferred over the zigzag bond for a palladium atom adsorbed on the surface of all three types of CNTs. The most energetically favorable site for a palladium atom adsorbed on three types of CNTs is above the axial boron-carbon bond in boron-doped CNT. The enhancement in palladium adsorption is more significant for the boron-doped CNT than it is for nitrogen-doped CNT with a similar configuration. So we conclude that accordingly, the preferred adsorption site is determined by the competition between the electron affinity of doped and adsorbed atoms and preferred degree of the axial bond over the zigzag bond.

  20. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  1. Acoustic and optical phonons in metallic diamond

    Directory of Open Access Journals (Sweden)

    M. Hoesch, T. Fukuda, T. Takenouchi, J.P. Sutter, S. Tsutsui, A.Q.R. Baron, M. Nagao, Y. Takano, H. Kawarada and J. Mizuki

    2006-01-01

    Full Text Available The dispersion of acoustic and optical phonons in highly boron-doped diamond has been measured by inelastic X-ray scattering at an energy resolution of 6.4 meV. The sample is doped in the metallic regime and shows superconductivity below 4.2 K (midpoint. The data are compared to pure and nitrogen-doped diamond that represent the non-metallic state. No difference is found for the acoustic phonons in the three samples, while the optical phonons show a shift of the dispersion (softening in qualitative agreement with earlier results from Raman spectroscopy. The presence of boron and nitrogen incorporated into the diamond lattice leads to structural disorder. Evidence for this is found both in the observation of otherwise symmetry-forbidded Bragg intensity at (0 0 2 and intensity from acoustic phonon modes in the vicinity of (0 0 2.

  2. STURCTURAL CHARACTERISTICS AND QUANTUM CHEMISTRY CALCULATION OF Al-DOPED BORON CARBIDES

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Structural characteristics, chemical bonds and thermoelectric properties of Al-doped boron carbides are studied through calculations of various structural unit models by using a self-consistent-field discrete variation Xα method. The calculations show that Al atom doped in boron carbide is in preference to substituting B or C atoms on the end of boron carbide chain, and then may occupy interstitial sites, but it is difficult for Al to substitute B or C atom in the centers of the chain or in the icosahedra. A representative structural unit containing an Al atom is [C-B-Al]ε+-[B11C]ε-, while the structural unit without Al is [C-B-B(C)]ε--[B11C]ε+, and the coexistence of these two different structural units makes the electrical conductivity increased. As the covalent bond of Al-B or Al-C is weaker than that of B-B or B-C, the thermal conductivity decreases when Al is added into boron carbides. With the electrical conductivity increasing and the thermal conductivity decreases, Al doping has significant effect on thermoelectric properties of boron carbides.

  3. Resonance of graphene nanoribbons doped with nitrogen and boron: a molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Ye Wei

    2014-05-01

    Full Text Available Based on its enticing properties, graphene has been envisioned with applications in the area of electronics, photonics, sensors, bio-applications and others. To facilitate various applications, doping has been frequently used to manipulate the properties of graphene. Despite a number of studies conducted on doped graphene regarding its electrical and chemical properties, the impact of doping on the mechanical properties of graphene has been rarely discussed. A systematic study of the vibrational properties of graphene doped with nitrogen and boron is performed by means of a molecular dynamics simulation. The influence from different density or species of dopants has been assessed. It is found that the impacts on the quality factor, Q, resulting from different densities of dopants vary greatly, while the influence on the resonance frequency is insignificant. The reduction of the resonance frequency caused by doping with boron only is larger than the reduction caused by doping with both boron and nitrogen. This study gives a fundamental understanding of the resonance of graphene with different dopants, which may benefit their application as resonators.

  4. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  5. Ab initio self-consistent calculations of the Compton profiles and polarizabilities of diamond and cubic boron nitride

    CERN Document Server

    Ayma, D; Lichanot, A

    1998-01-01

    Compton profiles, polarizabilities and related functions of diamond and cubic boron nitride have been investigated within the Hartree-Fock approximation and the density functional theory, calculated within the local density approximation and generalized gradient approximation, but without any explicit correlation correction for the Compton profiles. The correlation part already included in the standard uncorrected density functional theory is deduced from the comparison of the two types of calculation. The Compton profile and reciprocal-form-factor anisotropies, polarizability, dielectric constant and energy loss function of the two compounds are compared at the same level of accuracy. These properties are very close in spite of the rather different chemical bonds due to the charge transfer occurring in cubic boron nitride and gaps. (author)

  6. The Field Emission Characteristics of Titanium-Doped Nano-Diamonds

    Institute of Scientific and Technical Information of China (English)

    YANG Yan-Ning; ZHANG Zhi-Yong; ZHANG Fu-Chun; DONG Jun-Tang; ZHAO Wu; ZHAI Chun-Xue; ZHANG Wei-Hu

    2012-01-01

    An electrophoresis solution,prepared in a specific ratio of titanium (Ti)-doped nano-diamond,is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis.After high-temperature vacuum annealing,the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope,scanning electron microscopy and Raman spectroscopy.The field emission characteristics and luminescence features are also tested,and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed.The experimental results show that under the same conditions,the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti powder.Compared with the undoped nano-diamond cathode,the turn-on fields decline from 6.95 to 5.95 V/μm.When the electric field strength is 13.80 V/μm,the field emission current density increases to 130.00 μA/cm2.Under the applied fields,the emission current is stable and the luminescence is at its best,while the field emission characteristics of the 10 mg Ti-doped coating become worse,as does the luminescence.The reason for this could be that an excessive amount of TiC is generated on the surface of the coating.%An electrophoresis solution, prepared in a speciGc ratio of titanium (Ti)-doped nano-diamond, is dispersed by ultrasound and the nano-diamond coating is then deposited on a polished Ti substrate by electrophoresis. After high-temperature vacuum annealing, the appearance of the surface and the microstructures of the coating are observed by a metallomicroscope, scanning electron microscopy and Raman spectroscopy. The field emission characteristics and luminescence features are also tested, and the mechanism of the field emission characteristics of the Ti-doped nano-diamond is analyzed. The experimental results show that under the same conditions, the diamond-coated surface (by deposition) is more uniform after doping with 5 mg of Ti

  7. Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations

    Institute of Scientific and Technical Information of China (English)

    LIAO Long-Zhong; LIU Zheng-Hui; ZHANG Zhao-Hui

    2008-01-01

    Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.

  8. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Science.gov (United States)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  9. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke [Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Nomi-shi, Ishikawa-ken 923-1292 (Japan)

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  10. Transport properties of boron-doped single-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.T. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Ding, R.X., E-mail: rx_ding@163.co [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Song, J.X. [Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); School of Electronic Engineering, Xi' an Shiyou University, Xi' an 710075 (China)

    2011-01-15

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  11. Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, San Luis Potosi 78216 (Mexico); Reyes-Reyes, M [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi 78000 (Mexico); Rivera, J L, E-mail: sandov@ipicyt.edu.m [Facultad de Ingenieria Quimica, Universidad Michoacana de San Nicolas de Hidalgo, Santiago Tapia 403, Morelia, Michoacan, 58000 (Mexico)

    2010-12-22

    Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC{sub 3} island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations (<5%) the structural stabilities are similar. For all the doped cases, we have found that the BC{sub 3} island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

  12. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  13. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB 2

    Science.gov (United States)

    Zhao, Y.; Ke, C.; Cheng, C. H.; Feng, Y.; Yang, Y.; Munroe, P.

    2010-11-01

    Nano-diamond and titanium concurrently doped MgB2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on Jc-H behavior and pinning force scaling features of MgB2 have been investigated. Although Tc was slightly depressed, Jc of MgB2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the Jc value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB2, a unique nanocomposite in which TiB2 forms a thin layer surrounding MgB2 grains whereas nano-diamond particles were wrapped inside the MgB2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB2 system.

  14. Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@cea.fr [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Warnking, Jan; Depaulis, Antoine [INSERM, U836, Grenoble Institut des Neurosciences, Grenoble (France); Garçon, Laurie Amandine [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); CEA/INAC/SPrAM/CREAB, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Mermoux, Michel [Université Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Eon, David [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Mailley, Pascal [CEA-LETI-DTBS Minatec, 17 rue des Martyres, 38054 Grenoble (France); Omnès, Franck [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2015-01-01

    Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. - Highlights: • Microfabrication of all-diamond microelectrode array • Evaluation of as-grown nanocrystalline boron-doped diamond for electrical neural interfacing • MRI compatibility of nanocrystalline boron-doped diamond.

  15. Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

    Science.gov (United States)

    Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

    2017-04-01

    In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

  16. Energetic Stabilities, Structural and Electronic Properties of Monolayer Graphene Doped with Boron and Nitrogen Atoms

    Directory of Open Access Journals (Sweden)

    Seba Sara Varghese

    2016-12-01

    Full Text Available The structural, energetic, and electronic properties of single-layer graphene doped with boron and nitrogen atoms with varying doping concentrations and configurations have been investigated here via first-principles density functional theory calculations. It was found that the band gap increases with an increase in doping concentration, whereas the energetic stability of the doped systems decreases with an increase in doping concentration. It was observed that both the band gaps and the cohesive energies also depend on the atomic configurations considered for the substitutional dopants. Stability was found to be higher in N-doped graphene systems as compared to B-doped graphene systems. The electronic structures of B- and N-doped graphene systems were also found to be strongly influenced by the positioning of the dopant atoms in the graphene lattice. The systems with dopant atoms at alternate sublattices have been found to have the lowest cohesive energies and therefore form the most stable structures. These results indicate an ability to adjust the band gap as required using B and N atoms according to the choice of the supercell, i.e., the doping density and substitutional dopant sites, which could be useful in the design of graphene-based electronic and optical devices.

  17. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    Science.gov (United States)

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  18. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  19. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Songfoo [S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor (Malaysia); You, Ahheng [Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka (Malaysia); Tou, Teckyong, E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya (Malaysia)

    2013-03-20

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (D{sub eff}) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cu{sub I}{sup +}) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O{sub 2}{sup +} ions. The Cu{sub I}{sup +} ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu{sub I}{sup +} ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different D{sub eff} values, and compared with other measurement techniques.

  20. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation.

  1. Effects of boron-doping on the morphology and magnetic property of carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    JIANG Qi; QIAN Lan; YI Jing; ZHU Xiaotong; ZHAO Yong

    2007-01-01

    Boron carbide nanotubes (nano-fibers) was prepared by B powder and carbon nanotubes (CNTs) at high temperature in a vacuumed quartz tube.The morphology,microstructure,component and magnetic property of samples were characterized by transmission electron microscopy (TEM),X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and magnetic property measurement system (MPMS) controller.The results showed that B-doping CNTs have great difference in the morphology and magnetic property from those of pristine CNTs.

  2. Electrical properties of boron, phosphorus and gallium co-doped silicon

    OpenAIRE

    Fourmond, Erwann; Forster, Maxime; Einhaus, Roland; Lauvray, Hubert

    2011-01-01

    à paraître dans Energy Procedia; International audience; A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium were added as dopants. The introduction of Gallium as a third dopant allowed for a better control of the resistivity and the doping type during ingot growth. Measured resistivity in this material is shown to be systematically higher than that calculated using Scheil's law for the dopants distribution and Klaassen's model for the majority...

  3. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde.

    Science.gov (United States)

    Han, Hongling; Ding, Guodong; Wu, Tianbin; Yang, Dexin; Jiang, Tao; Han, Buxing

    2015-07-13

    A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB) was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP) as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  4. Effects of boron doping in TiO2 nanotubes and the performance of dye-sensitized solar cells

    Science.gov (United States)

    Subramanian, Alagesan; Wang, Hong-Wen

    2012-06-01

    Titanium nanotubes doped with boron used as the photoelectrode for dye-sensitized solar cells were investigated. The materials were characterized by SEM, XRD, and UV-vis spectroscopy and their photoconversion efficiencies were evaluated. The chemical compositions of TiO2 nanotubes (TNA) and boron doped TNA (B-TNA) were identified by the energy dispersive X-ray spectroscopy (EDS). XRD evidenced the presence of anatase as the main phase and presented the existence of boron elements at interstitial sites between the TiO2 lattices. The UV-vis spectra indicated the narrowing of band gap upon doping boron into titanium nanotubes. The photovoltaic properties were measured by a current-voltage meter under AM1.5 simulated light radiation. The boron-doped TiO2 nanotube arrays showed an enhanced performance with a photocurrent density of 7.85 ± 0.20 mA/cm2 and an overall conversion efficiency (η) of 3.44 ± 0.10%. The enhanced performance was attributed to the enhanced electron injection rate and retardation of the charge recombination, which could be due to perfect matching between the LUMO of dye molecules and the conduction band of TiO2. Electrochemical impedance spectroscopy (EIS) measurement indicated the longer electron lifetime and reduced TiO2/dye/electrolyte interface resistance for boron doped TiO2 nanotubes than that of undoped TiO2 nanotubes.

  5. First Principles Atomistic Model for Carbon-Doped Boron Suboxide

    Science.gov (United States)

    2014-09-01

    spectroscopy (EELS). J. Solid State Chem. 1997;133:365. 3. Herrmann M, Thiele M, Jaenicke-Roessler K, Freemantle CS, Sigalas I. Oxidation resistance...boron suboxide. Mater Sci and Eng A. 2011;528:5778. 5. Herrmann M, Kleebe HJ, Raethel J, Sempf K, Lauterback S, Muller MM, Sigalas I. Field...assisted densification of superhard B6O materials with Y2O3/Al2O3 addition. J Am Ceram Soc. 2009;92:2368. 6. Herrmann , M. Raethel, J. Bales, A. Sempf, K

  6. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  7. Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

    Science.gov (United States)

    Chandran, Maneesh; Michaelson, Shaul; Saguy, Cecile; Hoffman, Alon

    2016-11-01

    In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ˜1.8 × 1020 cm-3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

  8. Low-level boron doping and light-induced effects in amorphous silicon pin solar cells

    Science.gov (United States)

    Moeller, M.; Rauscher, B.; Kruehler, W.; Plaettner, R.; Pfleiderer, H.

    Amorphous silicon solar cells with the structure pin/ITO produced in the laboratory show an AM1 efficiency of up to 7.4 percent on 6 sq mm. The impact of doping the i-layer slightly with boron on the cell performance was studied together with its possible influence on the cell stability. Cells exposed to continuous AM1 illumination (up to 2000 hours) show a degradation of the efficiency. Differences in the bias-voltage during the deposition lead to significant differences in the stability whereas the influence of boron doping was not so prominent. The nu-tau-products for electrons and holes were shown to degrade differently through light-soaking for different doping-level. A further investigation was made by evaluating the frequency dependence of the capacitance via a new p i n junction model to obtain the density of states and the drift field in the i-layer for doping and light-soaking.

  9. Boron-doped graphene quantum dots for selective glucose sensing based on the "abnormal" aggregation-induced photoluminescence enhancement.

    Science.gov (United States)

    Zhang, Li; Zhang, Zhi-Yi; Liang, Ru-Ping; Li, Ya-Hua; Qiu, Jian-Ding

    2014-05-06

    A hydrothermal approach for the cutting of boron-doped graphene (BG) into boron-doped graphene quantum dots (BGQDs) has been proposed. Various characterizations reveal that the boron atoms have been successfully doped into graphene structures with the atomic percentage of 3.45%. The generation of boronic acid groups on the BGQDs surfaces facilitates their application as a new photoluminescence (PL) probe for label free glucose sensing. It is postulated that the reaction of the two cis-diol units in glucose with the two boronic acid groups on the BGQDs surfaces creates structurally rigid BGQDs-glucose aggregates, restricting the intramolecular rotations and thus resulting in a great boost in the PL intensity. The present unusual "aggregation-induced PL increasing" sensing process excludes any saccharide with only one cis-diol unit, as manifested by the high specificity of BGQDs for glucose over its close isomeric cousins fructose, galactose, and mannose. It is believed that the doping of boron can introduce the GQDs to a new kind of surface state and offer great scientific insights to the PL enhancement mechanism with treatment of glucose.

  10. Radiation tolerance of boron doped dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  11. Effect of sintering temperature and boron carbide content on the wear behavior of hot pressed diamond cutting segments

    Directory of Open Access Journals (Sweden)

    Islak S.

    2015-01-01

    Full Text Available The aim of this study was to investigate the effect of sintering temperature and boron carbide content on wear behavior of diamond cutting segments. For this purpose, the segments contained 2, 5 and 10 wt.% B4C were prepared by hot pressing process carried out under a pressure of 35 MPa, at 600, 650 and 700 °C for 3 minutes. The transverse rupture strength (TRS of the segments was assessed using a three-point bending test. Ankara andesite stone was cut to examine the wear behavior of segments with boron carbide. Microstructure, surfaces of wear and fracture of segments were determined by scanning electron microscopy (SEM-EDS, and X-ray diffraction (XRD analysis. As a result, the wear rate decreased significantly in the 0-5 wt.% B4C contents, while it increased in the 5-10 wt.% B4C contents. With increase in sintering temperature, the wear rate decreased due to the hard matrix.

  12. Surface analysis of CVD diamond exposed to fusion plasma

    NARCIS (Netherlands)

    Porro, S.; De Temmerman, G.; MacLaren, D. A.; Lisgo, S.; Rudakov, D. L.; Westerhout, J.; Wiora, M.; John, P.; Villalpando, I.; Wilson, J. I. B.

    2010-01-01

    Microcrystalline undoped and heavily boron-doped polycrystalline diamond layers have been deposited on various substrates by hot filament CVD and exposed to hydrogen plasma in a linear plasma reactor (Pilot-PSI, The Netherlands) that simulates the high flux and high density plasma conditions of toka

  13. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  14. Hydrogen doped thin film diamond. Properties and application for electronic devices

    CERN Document Server

    Looi, H J

    2000-01-01

    generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge is essential for exploring more advanced electronic devices such as the field effect transistors (FETs). Diamond is the only material suitable for detecting UV in the 220nm wavelength without any appreciable visible response. The prospect of introducing a doped layer based on Schottky mode for UV detection is important as it allows monolithic integration with other electronic devices. The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extre...

  15. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  16. Kinetics and thermodynamics of human serum albumin adsorption on silicon doped diamond like carbon

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Mukhtar H., E-mail: ahmed-m@email.ulster.ac.uk; Byrne, John A.; McLaughlin, James

    2015-03-15

    To gain a better understanding of protein adsorption onto biomaterial surfaces is required for the control of biocompatibility and bioactivity. Various samples of diamond like carbon (DLC) and silicon-doped DLC were synthesised using plasma enhanced chemical vapour deposition (PECVD). The effects of surface morphology on the interaction of human serum albumin (HSA) with doped and undoped DLC films was investigated using spectroscopic ellipsometry (SE) and other surface analysis techniques. The results highlighted an increase in both contact angle and hydrophobicity with increasing silicon dopant levels. A reduction on the contact angle values. After adsorption of HSA, the films showed a reduction in the contact angle with a significant change in the cosΔ and this gap increased with increasing surface coverage of HSA. The adsorption kinetics of HSA were also investigated and revealed that the maximum adsorption occurred at pH 5.0 and the process involved chemisorption. The experimental isotherm data were analysed using the Langmuir and Freundlich‎ models. The amount of HSA adsorbed increased with contact time and reached saturation ‎after 30 min. The adsorption ‎process was found to be pseudo first order with respect to the bulk concentration and was dependent on both the concentration of protein and surface characteristics of the samples. The amount of adsorbed HSA was higher with higher levels of silicon doping of the DLC. Therefore, doping DLC may provide an approach to controlling the protein adsorption. - Graphical abstract: The average thickness layer of HSA measurement onto surfaces of DLC and Si-DLC. - Highlights: • Diamond Like Carbon (DLC) and Silicon doped DLC were synthesised and characterised. • Si-DLC increases the hydrophobicity and decreases the surface free energy. • Adsorption study using human serum albumin (HSA). • The adsorbed amount of HSA increases with increasing of Silicon content DLC. • Adsorption process follow pseudo

  17. Enhanced surface transfer doping of diamond by V{sub 2}O{sub 5} with improved thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Kevin G., E-mail: k.crawford.2@research.gla.ac.uk; Moran, David A. J. [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Cao, Liang [High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei 230031, Anhui (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore); Qi, Dongchen, E-mail: d.qi@latrobe.edu.au [Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086 (Australia); Tallaire, Alexandre [LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France); Limiti, E.; Verona, C. [Department of Industrial Engineering, “Tor Vergata” University, Rome 00173 (Italy); Wee, Andrew T. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore)

    2016-01-25

    Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V{sub 2}O{sub 5} as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V{sub 2}O{sub 5} as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V{sub 2}O{sub 5} deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 10{sup 12} to 1.8 × 10{sup 13 }cm{sup −2} at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V{sub 2}O{sub 5} in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V{sub 2}O{sub 5} is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.

  18. Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser

    Institute of Scientific and Technical Information of China (English)

    N. A. Poklonski; N. M. Lapchuk; A. V. Khomich; LU Fan-Xiu; TANG Wei-Zhong; V. G. Ralchenko; I. I. Vlasov; M. V. Chukichev; Sambuu Munkhtsetseg

    2007-01-01

    Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 1018 cm-3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g-factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.

  19. Hole subband structure in single and double p-type {delta}-doped diamond quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Vargas, I. [Facultad de Ciencias, Univ. Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca (Mexico); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Univ. Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2007-07-01

    Heavy, light, and split-off hole states in single and double p-{delta}-doped diamond quantum wells are studied with the use of a 6 x 6 k.p model. The effective mass Hamiltonian is solved using a local density Thomas-Fermi-Dirac approximation for the description of the band bending profile. The features of the valence band spectrum are briefly discussed in both cases. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  1. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Science.gov (United States)

    Xue, Xiangxin; Wang, Yuzheng; Yang, He

    2013-01-01

    Boron-doped TiO2 (B/TiO2) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO2 nano-materials on Escherichia coli were investigated. The results show that the structure of TiO2 could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO2 structure or incorporated into the TiO2 lattice through occupying O sites, whereas others exist as B2O3. The results of antibacterial experiment under visible light irradiation show that the B/TiO2 nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO2. Ultimately, the action mechanism of B/TiO2 doping is discussed.

  2. Aluminum- and boron-co-doped ZnO ceramics: structural, morphological and electrical characterization

    Science.gov (United States)

    Liu, Shimin; Liu, Jindong; Jiang, Weiwei; Liu, Chaoqian; Ding, Wanyu; Wang, Hualin; Wang, Nan

    2016-10-01

    Highly dense and electrically conductive aluminum- and boron-co-doped ZnO (ABZO) ceramics were prepared by traditional pressureless sintering process. Single aluminum-doped ZnO (AZO) ceramics were synthesized with similar process and characterized for comparison. The densification behavior, crystal structure, morphology, composition and electrical properties of the ceramics were studied. Results indicated that AZO ceramics with the maximum relative density of 99.01 % were obtained only at 1350 °C for 4 h, which, however, was accompanied by electrical conductivity deterioration because of the increased insulated ZnAl2O4 phase formed in ceramics. Interestingly, the ABZO ceramics reached the maximum relative density of 98.84 % at 1100 °C, which was 250 °C lower compared with that of AZO ceramics. Moreover, the electrical conductivity of ABZO ceramics improved significantly with the increased sintering temperature and increased insulated ZnAl2O4 phase, which should be ascribed to the decreased grain boundaries and the resultant reduced carrier scattering in ceramics overcoming the influence of increased ZnAl2O4 phase due to boron doping effect.

  3. Boron-doped few-walled carbon nanotubes: novel synthesis and properties

    Science.gov (United States)

    Preston, Colin; Song, Da; Taillon, Josh; Cumings, John; Hu, Liangbing

    2016-11-01

    Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

  4. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  5. Oxygen- and Lithium-Doped Hybrid Boron-Nitride/Carbon Networks for Hydrogen Storage.

    Science.gov (United States)

    Shayeganfar, Farzaneh; Shahsavari, Rouzbeh

    2016-12-20

    Hydrogen storage capacities have been studied on newly designed three-dimensional pillared boron nitride (PBN) and pillared graphene boron nitride (PGBN). We propose these novel materials based on the covalent connection of BNNTs and graphene sheets, which enhance the surface and free volume for storage within the nanomaterial and increase the gravimetric and volumetric hydrogen uptake capacities. Density functional theory and molecular dynamics simulations show that these lithium- and oxygen-doped pillared structures have improved gravimetric and volumetric hydrogen capacities at room temperature, with values on the order of 9.1-11.6 wt % and 40-60 g/L. Our findings demonstrate that the gravimetric uptake of oxygen- and lithium-doped PBN and PGBN has significantly enhanced the hydrogen sorption and desorption. Calculations for O-doped PGBN yield gravimetric hydrogen uptake capacities greater than 11.6 wt % at room temperature. This increased value is attributed to the pillared morphology, which improves the mechanical properties and increases porosity, as well as the high binding energy between oxygen and GBN. Our results suggest that hybrid carbon/BNNT nanostructures are an excellent candidate for hydrogen storage, owing to the combination of the electron mobility of graphene and the polarized nature of BN at heterojunctions, which enhances the uptake capacity, providing ample opportunities to further tune this hybrid material for efficient hydrogen storage.

  6. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Xue Xiangxin [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Wang Yuzheng, E-mail: zheng_wangyu@qq.com [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Yang He [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials are prepared and doping improves particles agglomeration. Black-Right-Pointing-Pointer Absorption spectrum move to visible light after doped. Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials firstly applied to the fields of antibacterial materials. Black-Right-Pointing-Pointer Calcined at high temperature of 900 Degree-Sign C, B/TiO{sub 2} has still strong antibacterial. - Abstract: Boron-doped TiO{sub 2} (B/TiO{sub 2}) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO{sub 2} nano-materials on Escherichia coli were investigated. The results show that the structure of TiO{sub 2} could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO{sub 2} structure or incorporated into the TiO{sub 2} lattice through occupying O sites, whereas others exist as B{sub 2}O{sub 3}. The results of antibacterial experiment under visible light irradiation show that the B/TiO{sub 2} nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO{sub 2}. Ultimately, the action mechanism of B/TiO{sub 2} doping is discussed.

  7. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  8. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    James V. Marzik

    2012-03-26

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl{sub 3} in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB{sub 2} wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J{sub c}, in excess of 10{sup 5} A cm{sup -2} at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H{sub c2}(0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T{sub c} in carbon-doped MgB{sub 2} powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB{sub 2} superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant

  9. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Benecha, E. M. [Department of Physics, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa); Lombardi, E. B. [College of Graduate Studies, University of South Africa, P.O Box 392, UNISA 0003, Pretoria (South Africa)

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  10. Effect of Boron-Doping on the Graphene Aerogel Used as Cathode for the Lithium-Sulfur Battery.

    Science.gov (United States)

    Xie, Yang; Meng, Zhen; Cai, Tingwei; Han, Wei-Qiang

    2015-11-18

    A porous interconnected 3D boron-doped graphene aerogel (BGA) was prepared via a one-pot hydrothermal treatment. The BGA material was first loaded with sulfur to serve as cathode in lithium-sulfur batteries. Boron was positively polarized on the graphene framework, allowing for chemical adsorption of negative polysufide species. Compared with nitrogen-doped and undoped graphene aerogel, the BGA-S cathode could deliver a higher capacity of 994 mA h g(-1) at 0.2 C after 100 cycles, as well as an outstanding rate capability, which indicated the BGA was an ideal cathode material for lithium-sulfur batteries.

  11. Boron-Doped Anatase TiO2 as a High-Performance Anode Material for Sodium-Ion Batteries.

    Science.gov (United States)

    Wang, Baofeng; Zhao, Fei; Du, Guodong; Porter, Spencer; Liu, Yong; Zhang, Peng; Cheng, Zhenxiang; Liu, Hua Kun; Huang, Zhenguo

    2016-06-29

    Pristine and boron-doped anatase TiO2 were prepared via a facile sol-gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol-gel method leads to agglomerated TiO2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles. The structure, morphology, and electrochemical properties were studied. The crystal size of TiO2 with boron doping is smaller than that of the nondoped crystals, which indicates that the addition of boron can inhibit the crystal growth. The electrochemical measurements demonstrated that the reversible capacity of the B-doped TiO2 is higher than that for the pristine sample. B-doping also effectively enhances the rate performance. The capacity of the B-doped TiO2 could reach 150 mAh/g at the high current rate of 2C and the capacity decay is only about 8 mAh/g over 400 cycles. The remarkable performance could be attributed to the lattice expansion resulting from B doping and the shortened Li(+) diffusion distance due to the nanosize. These results indicate that B-doped TiO2 can be a good candidate for SIBs.

  12. TiO2 nanopowder co-doped with iodine and boron to enhance visible-light photocatalytic activity.

    Science.gov (United States)

    Ding, Jianqiang; Yuan, Yali; Xu, Jinsheng; Deng, Jian; Guo, Jianbo

    2009-10-01

    An iodine and boron co-doped TiO2 photocatalyst was prepared by the hydrolyzation-precipitation method. X-ray diffraction (XRD), ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS), and X-ray photoelectron spectroscopy (XPS) were applied to characterize the crystalline structure, light absorbing ability, and the chemical state of iodine and boron in the photocatalysts. The results of photocatalytic degradation of methyl orange demonstrated that the I-B-TiO2 catalyst prepared at 400 degrees C for 3 h exhibited the highest photocatalytic activity with a methyl orange degradation ratio of 61% under visible-light (lambda > or = 420 nm) irradiation for 120 min. The characterization results revealed that I-B-TiO2 is in conformity with the anatase TiO2 and that the doping of iodine and boron ions could efficiently inhibit the grain growth. Doped iodine was present in the multivalent forms of 17+, I- and I5+. Doped boron was present as B3+ in an as-prepared sample, forming a possible chemical environment such as B-O-Ti. Overall, the doping of I and B enhanced the ability of TiO2 to absorb visible-light, and it was observed that the photocatalytic activity of I-B-TiO2 was enhanced by the synergistic effect of I and B.

  13. Adsorption Mechanism of Hydrogen on Boron-Doped Fullerenes

    Institute of Scientific and Technical Information of China (English)

    YU Liu-Min; SHI Guo-Sheng; WANG Zhi-Gang; JI Guang-Fu; LU Zhi-Peng

    2009-01-01

    The C35BH-H2 complex and two other possible isomers,C34BCαH-H2 and C34BCbH-H2,are investigated using the local-spin-density approximation (LSDA) method.The results indicate that a single hydrogen molecule could be strongly adsorbed on two isomers,C34BCaH and C34BCbH,with binding energies of 0.42 and 0.47eV,respectively,and that these calculated binding energies are suitable for reversible hydrogen adsorption/desorption near room temperature.However,it is difficult for the H2 molecule to be firmly adsorbed on C35BH.We analyze the interaction between C34BCxH (x = a,b) and the H2 molecule using dipole moments and molecular orbitals.The charge analysis showed there was a partial charge (about 0.32e)transfer from H2 to the doped fullerenes.These calculation results should broaden our understanding of the mechanisms of hydrogen storage using borondoped fullerenes.

  14. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  15. Defect charge states in Si doped hexagonal boron-nitride monolayer.

    Science.gov (United States)

    Mapasha, R E; Molepo, M P; Andrew, R C; Chetty, N

    2016-02-10

    We perform ab initio density functional theory calculations to investigate the energetics, electronic and magnetic properties of isolated stoichiometric and non-stoichiometric substitutional Si complexes in a hexagonal boron-nitride monolayer. The Si impurity atoms substituting the boron atom sites SiB giving non-stoichiometric complexes are found to be the most energetically favourable, and are half-metallic and order ferromagnetically in the neutral charge state. We find that the magnetic moments and magnetization energies increase monotonically when Si defects form a cluster. Partial density of states and standard Mulliken population analysis indicate that the half-metallic character and magnetic moments mainly arise from the Si 3p impurity states. The stoichiometric Si complexes are energetically unfavorable and non-magnetic. When charging the energetically favourable non-stoichiometric Si complexes, we find that the formation energies strongly depend on the impurity charge states and Fermi level position. We also find that the magnetic moments and orderings are tunable by charge state modulation q  =  -2, -1, 0, +1, +2. The induced half-metallic character is lost (retained) when charging isolated (clustered) Si defect(s). This underlines the potential of a Si doped hexagonal boron-nitride monolayer for novel spin-based applications.

  16. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Möller, Christian, E-mail: cmoeller@cismst.de [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Bartel, Til; Gibaja, Fabien [Calisolar GmbH, Magnusstraße 11, 12489 Berlin (Germany); Lauer, Kevin [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany)

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  17. Hydrogen storage in Li-doped fullerene-intercalated hexagonal boron nitrogen layers

    Science.gov (United States)

    Cheng, Yi-Han; Zhang, Chuan-Yu; Ren, Juan; Tong, Kai-Yu

    2016-10-01

    New materials for hydrogen storage of Li-doped fullerene (C20, C28, C36, C50, C60, C70)-intercalated hexagonal boron nitrogen ( h-BN) frameworks were designed by using density functional theory (DFT) calculations. First-principles molecular dynamics (MD) simulations showed that the structures of the C n -BN ( n = 20, 28, 36, 50, 60, and 70) frameworks were stable at room temperature. The interlayer distance of the h-BN layers was expanded to 9.96-13.59 Å by the intercalated fullerenes. The hydrogen storage capacities of these three-dimensional (3D) frameworks were studied using grand canonical Monte Carlo (GCMC) simulations. The GCMC results revealed that at 77 K and 100 bar (10 MPa), the C50-BN framework exhibited the highest gravimetric hydrogen uptake of 6.86 wt% and volumetric hydrogen uptake of 58.01 g/L. Thus, the hydrogen uptake of the Li-doped C n -intercalated h-BN frameworks was nearly double that of the non-doped framework at room temperature. Furthermore, the isosteric heats of adsorption were in the range of 10-21 kJ/mol, values that are suitable for adsorbing/desorbing the hydrogen molecules at room temperature. At 193 K (-80 °C) and 100 bar for the Li-doped C50-BN framework, the gravimetric and volumetric uptakes of H2 reached 3.72 wt% and 30.08 g/L, respectively.

  18. The structural and mechanical behaviours of Boron-doped ZnO nanostructures

    Science.gov (United States)

    Senol, Abdulkadir; Demirozu Senol, Sevim; Ozturk, Ozgur; Asikuzun, Elif; Tasci, Ahmet Tolga; Terzioglu, Cabir

    2015-03-01

    Undoped and Boron (B)-doped Zinc Oxide (ZnO) nanopowders were synthesized by Hydrothermal method. The structural and mechanical behaviours of B doped ZnO (Zn1-xBx O, x =0, 0.05, 0.07, 0.11) were systematically examined. The crystal structure, phases, sizes and microstructure of Zn1-xBx O powder samples characterized by using X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Microhardness values of all B doped ZnO powders were measured with different loads (0.245, 0.490, 0.980, 1.960 ve 2.940 N) using a digital Vickers microhardness tester. The experimental microhardness data were used to determine elastic modules, yield strength, and fracture toughness value of the samples. Additionally, the experimental results were analyzed using the various theoretical models namely, Kick's Law, Elastic/Plastic Deformation (EPD) models, Proportional Specimen Resistance (PSR), and Hays-Kendall (HK) approach. The Vickers microhardness measurements revealed that hardness of Zn1-xBx O powder samples increased with B doping. This research partially supported by Abant Izzet Baysal University Scientific Research Projects Coordination Department under the Grant No. BAP-2013.03.02.609.

  19. Synthesis and characterization of boron-doped NiO thin films pro-duced by spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    U Alver; H Yaykasl; S Kerli; A Tanrverdi

    2013-01-01

    Boron-doped NiO thin films were prepared on glass substrates at 400◦C by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diff raction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.

  20. Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

    2016-07-01

    The X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS), valence band photoemission (VB-PES) and Raman spectroscopy results show that the incorporation of nitrogen in pulsed laser deposited diamond like carbon (DLC) thin films, reverts the sp{sup 3} network to sp{sup 2} as evidenced by an increase of the sp{sup 2} cluster and I{sub D}/I{sub G} ratio in C K-edge XANES and Raman spectra respectively which reduces the hardness/Young's modulus into the film network. Si-doped DLC film deposited in a plasma enhanced chemical vapour deposition process reduces the sp{sup 2} cluster and I{sub D}/I{sub G} ratio that causes the decrease of hardness/Young's modulus of the film structure. The Fe-doped DLC films deposited by dip coating technique increase the hardness/Young's modulus with an increase of sp{sup 3}-content in DLC film structure. - Highlights: • Fe, N and Si doped DLC films deposited by dip, PLD and PECVD methods respectively • DLC:Fe thin films have higher hardness/Young's modulus than DLC:N(:Si) thin films. • sp{sup 3} and sp{sup 2} contents are estimated from C K-edge XANES and VB-PES measurements.

  1. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  2. Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

    Directory of Open Access Journals (Sweden)

    Xiaowei Li

    2015-01-01

    Full Text Available Structure and properties of Cu-doped diamond-like carbon films (DLC were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.% on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

  3. Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaowei; Ke, Peiling; Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-01-15

    Structure and properties of Cu-doped diamond-like carbon films (DLC) were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.%) on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

  4. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  5. Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

    Directory of Open Access Journals (Sweden)

    Rattanakorn Saensak

    2014-03-01

    Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

  6. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  7. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Science.gov (United States)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  8. Science Letters:Development of supported boron-doping TiO2 catalysts by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

  9. Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion

    Science.gov (United States)

    Li, Xinlu; Feng, Shuang; Liu, Xiuhuan; Hou, Lixin; Gao, Yanjun; Wang, Qi; Liu, Nian; Zhang, Hai; Chen, Zhanguo; Zheng, Jie; Jia, Gang

    2014-07-01

    The method of high temperature thermal diffusion was successfully applied for doping Si impurities into cubic boron nitride (cBN) crystals. X-ray photoelectron spectra (XPS) and the current-voltage (I-V) characteristics at different temperatures were respectively used for analyzing the chemical states and the activation energy of Si impurity in cBN. According to the XPS results, Si impurities mainly replace B atoms bonding with the adjacent N atoms and become donors in cBN. Without surface cleaning, there are a lot of C and O contaminations on the surface of cBN, so a small quantity of C-Si and Si-N-O bonds also exist at the surface of cBN. Most Si impurities distribute in the shallow layer underneath the surface of cBN. Based on the electric measurement, Si impurities in cBN usually have the activation energy beyond 0.4 eV, and they can only be slightly ionized at room temperature, therefore the resistivity of Si-doped cBN is still high, and the space charge limited current becomes the main conductive mechanism in cBN. However, the conductivity of Si-doped cBN can rapidly increase with the temperature. In addition, the activation energy and the concentration of Si impurity in cBN can be affected by the temperature and the time of thermal diffusion, which needs to be verified further.

  10. Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes

    Science.gov (United States)

    Li, Xin; Hua, Weijie; Wang, Bo-Yao; Pong, Way-Faung; Glans, Per-Anders; Guo, Jinghua; Luo, Yi

    2016-08-01

    Doping is an efficient way to open the zero band gap of graphene. The control of the dopant domain size allows us to tailor the electronic structure and the properties of the graphene. We have studied the electronic structure of boron nitride doped graphenes with different domain sizes by simulating their near-edge X-ray absorption fine structure (NEXAFS) spectra at the N K-edge. Six different doping configurations (five quantum dot type and one phase-separated zigzag-edged type) were chosen, and N K-edge NEXAFS spectra were calculated with large truncated cluster models by using the density functional theory with hybrid functional and the equivalent core hole approximation. The opening of the band gap as a function of the domain size is revealed. We found that nitrogens in the dopant boundary contribute a weaker, red-shifted π* peak in the spectra as compared to those in the dopant domain center. The shift is related to the fact that these interfacial nitrogens dominate the lowest conduction band of the system. Upon increasing the domain size, the ratio of interfacial atom decreases, which leads to a blue shift of the π* peak in the total NEXAFS spectra. The spectral evolution agrees well with experiments measured at different BN-dopant concentrations and approaches to that of a pristine h-BN sheet.

  11. Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature

    Institute of Scientific and Technical Information of China (English)

    Li Yong; Jia Xiao-Peng; Hu Mei-Hua; Liu Xiao-Bing; Yan Bing-Min; Zhou Zhen-Xiang; Zhang Zhuang-Fei; Ma Hong-An

    2012-01-01

    A series of diamond crystals doped with hydrogen is successfully synthesized using LiH as the hydrogen source in a catalyst-carbon system at a pressure of 6.0 GPa and temperature ranging from 1255 ℃ to 1350 ℃.It is shown that the high temperature plays a key role in the incorporation of hydrogen atoms during diamond crystallization.Fourier transform infrared micro-spectroscopy reveals that most of the hydrogen atoms in the synthesized diamond are incorporated into the crystal structure as sp3-CH2-symmetric(2850 cm-1)and sp3 CH2-antisymmetric vibrations(2920 cm-1).The intensities of these peaks increase gradually with an increase in the content of the hydrogen source in the catalyst.The incorporation of hydrogen impurity leads to a significant shift towards higher frequencies of the Raman peak from 1332.06 cm-1 to 1333.05 cm-1 and gives rise to some compressive stress in the diamond crystal lattice.Furthermore,hydrogen to carbon bonds are evident in the annealed diamond,indicating that the bonds that remain throughout the annealing process and the vibration frequencies centred at 2850 and 2920 cm-1 have no observable shift.Therefore,we suggest that the spa C-H bond is rather stable in diamond crystals.

  12. Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

    Energy Technology Data Exchange (ETDEWEB)

    Bagaev, V. S.; Nikolaev, S. N.; Onishchenko, E. E.; Pruchkina, A. A. [P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation); Krivobok, V. S., E-mail: krivobok@lebedev.ru [P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation); Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow Region (Russian Federation); Novikov, A. V. [Institute for Physics of Microstructures Russian Academy of Sciences, Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, Nizhny Novgorod (Russian Federation)

    2015-05-14

    Low-temperature photoluminescence of undoped and moderately δ-doped Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells has been studied. The influence of boron δ-layer on the excitonic luminescence and the luminescence caused by a dense electron plasma was demonstrated. The conditions under which the luminescence spectra of quantum wells are dominated by impurity-bound excitons (BE) have been established. Some unusual properties of these BE are explained in terms of type II band-offset in Si{sub 1−x}Ge{sub x}/Si (x < 0.1) quantum wells, which favors a spatial separation of electrons and holes. It is shown that the temperature dependence of an excitonic emission in the quantum wells allows to calculate the BE-related density of states and, thus, can be used for contactless estimation of the impurity concentration in quantum wells.

  13. Highly air- and moisture-stable hole-doped carbon nanotube films achieved using boron-based oxidant

    Science.gov (United States)

    Funahashi, Kazuma; Tanaka, Naoki; Shoji, Yoshiaki; Imazu, Naoki; Nakayama, Ko; Kanahashi, Kaito; Shirae, Hiroyuki; Noda, Suguru; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi

    2017-03-01

    Hole doping into carbon nanotubes can be achieved. However, the doped nanotubes usually suffer from the lack of air and moisture stability, thus, they eventually lose their improved electrical properties. Here, we report that a salt of the two-coordinate boron cation Mes2B+ (Mes: 2,4,6-trimethylphenyl group) can serve as an efficient hole-doping reagent to produce nanotubes with markedly high stability in the presence of air and moisture. Upon doping, the resistances of the nanotubes decreased, and these states were maintained for one month in air. The hole-doped nanotube films showed a minimal increase in resistance even upon humidification with a relative humidity of 90%.

  14. Synthesis and Antimicrobial Activity of Boron-doped Titania Nano-materials

    Institute of Scientific and Technical Information of China (English)

    王昱征; 薛向欣; 杨合

    2014-01-01

    Antibacterial activity of boron-doped TiO2 (B/TiO2) nano-materials under visible light irradiation and in the dark was investigated. A simple sol-gel method was used to synthesize TiO2 nano-materials. X-ray diffraction pattern of B/TiO2 nano-materials represents the diffraction peaks relating to the crystal planes of TiO2 (anatase and rutile). X-ray photoelectron spectroscopy result shows that part of boron ions incorporates into TiO2 lattice to form a possible chemical environment like Ti-O-B and the rest exist in the form of B2O3. The study on antibacterial effect of B/TiO2 nano-materials on fungal Candida albicans (ATCC10231), Gram-negative Escherichia coli (ATCC25922) and Gram-positive Staphylococcus aureus (ATCC6538) shows that the antibacterial action is more significant on Candida albicans than on Escherichia coli and Staphylococcus aureus. Under visible light irradiation, the antibacterial activity is superior to that in the dark.

  15. Application of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films for ultraviolet detection

    Science.gov (United States)

    Zkria, Abdelrahman; Gima, Hiroki; Yoshitake, Tsuyoshi

    2017-03-01

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) films were grown by coaxial arc plasma deposition in the ambient of nitrogen and hydrogen mixed gases. Synthesized films were structurally investigated by X-ray photoemission and near-edge X-ray absorption fine structure spectroscopies. A heterojunction with p-type Si substrate was fabricated to study the ultraviolet photodetection properties of the film. Capacitance-voltage measurements assure the expansion of a depletion region into the film side. Current-voltage curves in the dark showed a good rectifying behaviour in the bias voltages range between ±5 V. Under 254 nm monochromatic light, the heterojunction shows a capability of deep ultraviolet light detection, which can be attribute to the existence of UNCD grains. As the diode was cooled from 300 K down to 150 K, the detectivity has a notable enhancement from 1.94 × 105 cm Hz1/2 W-1 at 300 K to 5.11 × 1010 cm Hz1/2 W-1 at 150 K, which is mainly due to a remarkable reduction in the leakage current at low temperatures. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H film works as ultraviolet-range photovoltaic material.

  16. Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite.

    Science.gov (United States)

    Xing, Mingyang; Li, Xiao; Zhang, Jinlong

    2014-06-30

    TiO2/graphene (TiO2-x/GR) composites, which are Ti(3+) self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti(3+) self-doping on TiO2 nanorods and boron doping on graphene.

  17. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  18. Properties of Boron-dopedμc-Ge:H Films Deposited by Hot-wire CVD

    Institute of Scientific and Technical Information of China (English)

    HUANG Haibin; SHEN Honglie; WU Tianru; LU Linfeng; TANG Zhengxia; SHEN Jiancang

    2015-01-01

    Boron-doped hydrogenated microcrystalline Germanium (μc-Ge:H)fi lms were deposited by hot-wire CVD. H2 diluted GeH4 and B2H6 were used as precursors and the substrate temperature was kept at 300ć. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that thefi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge (220). The conductivity of thefi lms increases and tends to be saturated with increasingdiborane-to-germane ratio . All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3Ω-1ίcm-1 is gained at=6.7%.

  19. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    López-Albarrán, P. [Facultad de Ingeniería en Tecnología de la Madera, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Navarro-Santos, P., E-mail: pnavarrosa@conacyt.mx [Instituto de Investigaciones Químico-Biológicas, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Garcia-Ramirez, M. A. [Research Centre for Innovation in Aeronautical Engineering, Universidad Autónoma de Nuevo León, Ciudad Universitaria, San Nicolás de los Garza, CP 66451 Nuevo León (Mexico); Ricardo-Chávez, J. L. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Lomas 4" asección, CP 78216, San Luis Potosí, S. L. P. (Mexico)

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  20. Boron doped g-C3N4 with enhanced photocatalytic UO22+ reduction performance

    Science.gov (United States)

    Lu, Changhai; Chen, Rongyue; Wu, Xi; Fan, Meifeng; Liu, Yunhai; Le, Zhanggao; Jiang, Shujuan; Song, Shaoqing

    2016-01-01

    Tuning the band gap and absorption intensity of visible-light by element doping is an attractive strategy to enhance the photocatalytic activity of semiconductor materials. Here we doped boron into g-C3N4 to construct highly efficient photocatalysts (B-g-C3N4) for the photocatalytic reduction of UO22+. Characterization and photocatalysis tests showed the band gap of B-g-C3N4 was narrowed, and the absorption intensity of visible-light was enhanced with increasing the formed N-B-C (BCN) of B-g-C3N4, which is consistent with the trend of the photocatalytic performance of B-g-C3N4. The optimized B-g-C3N4 photocatalyst with BCN content of 1.01 at.% exhibited excellent removal efficiency of UO22+ and good photocatalytic stability. Therefore, these results may lead to a new strategy for exploring the advanced photocatalysts based on the carbon nanomaterials with abundant BCN for the photocatalytic reduction of U(VI) pollutant.

  1. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  2. First-principles calculations on the structure and electronic properties of boron doping zigzag single-walled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    WEN QingBo; YU ShanSheng; ZHENG WeiTao

    2009-01-01

    Calculations have been made for single-walled zigzag (n, 0) carbon nanotubes containing substitutional boron impurity atoms using ab initio density functional theory. It is found that the formation energies of these nanotubes depend on the tube diameter, as do the electronic properties, and show periodic fea-ture that results from their different π bonding structures compared to those of perfect zigzag carbon nanotubes. When more boron atoms are incorporated into a single-walled zigzag carbon nanotube, the substitutional boron atoms tend to come together to form structure of BC3 nanodomains, and B-doped tubes have striking acceptor states above the top of the valence bands. For the structure of BC3, there are two kinds of configurations with different electronic structures.

  3. First-principles calculations on the structure and electronic properties of boron doping zigzag single-walled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Calculations have been made for single-walled zigzag(n,0) carbon nanotubes containing substitutional boron impurity atoms using ab initio density functional theory.It is found that the formation energies of these nanotubes depend on the tube diameter,as do the electronic properties,and show periodic fea-ture that results from their different π bonding structures compared to those of perfect zigzag carbon nanotubes.When more boron atoms are incorporated into a single-walled zigzag carbon nanotube,the substitutional boron atoms tend to come together to form structure of BC3 nanodomains,and B-doped tubes have striking acceptor states above the top of the valence bands.For the structure of BC3,there are two kinds of configurations with different electronic structures.

  4. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

    Science.gov (United States)

    Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf

    2008-10-01

    Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4Ωcm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92cm2 and is furthermore shown to be stable under illumination at room temperature.

  5. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    Science.gov (United States)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  6. Boron/nitrogen co-doped helically unzipped multiwalled carbon nanotubes as efficient electrocatalyst for oxygen reduction.

    Science.gov (United States)

    Zehtab Yazdi, Alireza; Fei, Huilong; Ye, Ruquan; Wang, Gunuk; Tour, James; Sundararaj, Uttandaraman

    2015-04-15

    Bamboo structured nitrogen doped multiwalled carbon nanotubes have been helically unzipped, and nitrogen doped graphene oxide nanoribbons (CNx-GONRs) with a multifaceted microstructure have been obtained. CNx-GONRs have then been codoped with nitrogen and boron by simultaneous thermal annealing in ammonia and boron oxide atmospheres, respectively. The effects of the codoping time and temperature on the concentration of the dopants and their functional groups have been extensively investigated. X-ray photoelectron spectroscopy results indicate that pyridinic and BC3 are the main nitrogen and boron functional groups, respectively, in the codoped samples. The oxygen reduction reaction (ORR) properties of the samples have been measured in an alkaline electrolyte and compared with the state-of-the-art Pt/C (20%) electrocatalyst. The results show that the nitrogen/boron codoped graphene nanoribbons with helically unzipped structures (CNx/CBx-GNRs) can compete with the Pt/C (20%) electrocatalyst in all of the key ORR properties: onset potential, exchange current density, four electron pathway selectivity, kinetic current density, and stability. The development of such graphene nanoribbon-based electrocatalyst could be a harbinger of precious metal-free carbon-based nanomaterials for ORR applications.

  7. A first principles study of pristine and Al-doped boron nitride nanotubes interacting with platinum-based anticancer drugs

    Science.gov (United States)

    Shakerzadeh, Ehsan; Noorizadeh, Siamak

    2014-03-01

    Interaction of cis-platin and neda-platin, two conventional platinum-based anticancer drugs, with pristine [8,8] and Al-doped [8,0] boron nitride nanotubes (BNNTs) are investigated using the density functional theory (DFT) method. The obtained results indicate that cis-platin and neda-platin weakly interact with pristine zig zag or armchair BNNTs with a little dependency on the adsorbing positions; while both cis-platin and neda-platin are preferentially adsorbed onto the Al atom of the Al-doped BNNT with considerable adsorption energies. Therefore the Al-doped-BNNT might be an efficient carrier for delivery of these drugs in nanomedicine domain. The electronic structures of the stable configurations are also investigated through both DOS and PDOS spectra. The obtained results introduce the Al-doped-BNNT as an efficient carrier for delivery of cis-platin and neda-platin in nanomedicine domain.

  8. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  9. Preparation and visible-light-driven photoelectrocatalytic properties of boron-doped TiO{sub 2} nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Su Yaling; Han Song; Zhang Xingwang; Chen Xiuqin [Institute of Environmental Pollution Control Technologies, Xixi Campus, Zhejiang University, Hangzhou 310028 (China); Lei Lecheng [Institute of Environmental Pollution Control Technologies, Xixi Campus, Zhejiang University, Hangzhou 310028 (China)], E-mail: lclei@zju.edu.cn

    2008-08-15

    In the present study, chemical vapour deposition (CVD) was applied to dope boron into TiO{sub 2} nanotubes anodized Ti in C{sub 2}H{sub 2}O{sub 4}.2H{sub 2}O + NH{sub 4}F electrolyte with the goal of improving the photocatalytic (PC) activity under visible light. The undoped TiO{sub 2} nanotubes had a highly self-organized structure. However, after doping through CVD, TiO{sub 2} nanotubes suffered from an observable disintegration of morphological integrity. X-ray diffraction (XRD) results confirmed that annealing temperature had an influence on the phase structure and boron impurities could retard anatase-rutile phase transition. Diffuse reflectance absorption spectra (DRS) analysis indicated that B-doped samples displayed stronger absorption in both UV and visible range. B-doped TiO{sub 2} nanotubes electrode annealed at 700 deg. C through CVD showed higher photoelectrocatalytic (PEC) efficiency in methyl orange (MO) degradation than that annealed at 400 deg. C and 550 deg. C. MO degradation was substantially enhanced with the increasing applied bias potential. Moreover, there was a synergetic effect between the electrochemical and photocatalytic processes, and the synergetic factor R reached 1.45. B-doped TiO{sub 2} nanotubes electrode showed good stability after 10 times by repeating photoelectrocatalysis of MO.

  10. Elaboration and characterization of boron doping during SiC growth by VLS mechanism

    Science.gov (United States)

    Soueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumié, Mohamad; Habka, Nada; Souliere, Véronique; Bluet, Jean-Marie; Kazan, Michel

    2011-07-01

    VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 1450-1500 °C. Two main approaches were studied to incorporate boron during growth: (1) adding elemental B in the initial melt, with two different compositions: Si 90B 10 and Si 27Ge 68B 5; the growth was performed at 1500 °C; (2) adding B 2H 6 to the gas phase during growth with a melt composition of Si 25Ge 75; the growth was performed at 1450 °C. In most cases, the growth time was limited by liquid loss. The longest growth duration (1 h) was obtained when adding B 2H 6 to the gas phase. In the case of Si 90B 10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B, which results in a strong B-N donor-acceptor band. The thickness and the growth rate were determined by micro-Infrared spectroscopy. Particle Induced γ-ray Emission (PIGE) was tentatively used to detect B incorporation inside the grown layers. These results were compared to SIMS measurements from which B concentration was found to vary from 10 18 to 10 19 at cm -3.

  11. Cathodoluminescence of Cr-doped diamond-like carbon film by filtered cathodic vacuum arc plasma

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Meng-Wen; Jao, Jui-Yun [Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Lin, Chun-Chun; Hsieh, Wei-Jen; Yang, Yu-Hsiang [Department of Materials Science and Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 300, Taiwan (China); Cheng, Li-Shin; Shieu, F.S. [Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Department of Materials Science and Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 300, Taiwan (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, 55 Hwa Kang Road, Yang Ming Shan, Taipei 111, Taiwan (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer The formation of the DLC:Cr films dependent on the flow rates of C{sub 2}H{sub 2}/Ar have been achieved in our FCVA plasma. Black-Right-Pointing-Pointer The amorphous DLC:Cr have high sp{sup 2} content can be completely converted to nanocrystalline Cr{sub 3}C{sub 2}. Black-Right-Pointing-Pointer The effect of doping with Cr is apparently to change the band structure of the DLC and its consequent cathodoluminescence property. - Abstract: Cr doped diamond-like carbon (DLC:Cr) film was synthesized in various flow rates of C{sub 2}H{sub 2}/Ar under a substrate voltage of -50 V at 500 Degree-Sign C by a filtered cathodic vacuum arc plasma. This work has found that the structure of the films was correlated to the flow rate of C{sub 2}H{sub 2}/Ar but the luminescence properties are similar. The cathodoluminescence spectra of DLC:Cr films obtained at 1.9-2.4 eV verifies that the luminescence from the films is in the visible region. The incorporation of Cr into the carbon network results in red emission shifted to 1.99 eV and the orange emission (2.03 eV) also appeared due to the transitions between chromium-related electron levels and {sigma}* states. The peak at 2.10 eV may result from the defects of the structures in DLC:Cr films.

  12. Co-doping TiO{sub 2} with boron and/or yttrium elements: Effects on antimicrobial activity

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuzheng [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870 (China); Wu, Yusheng, E-mail: henanwys@sina.com [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870 (China); Yang, He; Xue, Xiangxin; Liu, Zhihua [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China)

    2016-09-15

    Highlights: • B-Y/TiO{sub 2} nano materials firstly applied to the fields of antibacterial materials. • Systems analysis the existence state of boron and yttrium ion in TiO{sub 2}. • Doping B and Y greatly strengthened the antibacterial activity of TiO{sub 2}. - Abstract: Pure TiO{sub 2}, boron and/or yttrium doped TiO{sub 2} nano-materials were synthesized by a sol–gel method and characterized by XRD, SEM, XPS and PL. XRD analysis indicates that, in the pure TiO{sub 2} and B single doped TiO{sub 2} (B-TiO{sub 2}) nano-materials calcinated at 700 °C, the presence of TiO{sub 2} is a mixture of anatase and rutile; in the Y single doped (Y-TiO{sub 2}), B and Y co-doped TiO{sub 2} nano-materials (B/Y-TiO{sub 2}), the presence of TiO{sub 2} is anatase. SEM image shows the prepared materials have a common round morphology and hexagonal plate morphology caused by the agglomeration of particles. Boron atoms are partially embedded into the TiO{sub 2} interstitial structure or incorporated into the TiO{sub 2} lattice through occupying the position of the oxygen atoms. The results of antimicrobial experiment show that B/Y-TiO{sub 2} material has a remarkable antimicrobial activity. Compared with the visible light irradiation, antimicrobial activity of B/Y-TiO{sub 2} in dark is significant poor.

  13. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  14. Optical and electronic properties of SO2 molecule adsorbed on Si-doped (8, 0) boron nitride nanotube

    Science.gov (United States)

    Guo, Shuang-Shuang; Wei, Xiu-Mei; Zhang, Jian-Min; Zhu, Gang-Qiang; Guo, Wan-Jin

    2016-09-01

    The study of the optical properties of pristine BNNT, Si-doped BNNTs and SO2 molecule adsorption on Si-doped BNNTs is that, to our knowledge, few relevant research have ever been found. In this paper, the adsorption behaviors of Sulfur dioxide (SO2) molecule on Si-doped Boron nitride nanotubes (BNNTs) are investigated applying the first-principles calculations. The main contribution of this paper is that the foremost investigation for the optical properties of the pristine BNNT, Si-doped BNNTs and SO2 adsorption on Si-doped BNNTs. Additionally, the electronic properties and the structural properties are also presented. In our calculations of optical properties, the dielectric constant, the refractive index and the absorption coefficient are obtained. Comparing the pristine BNNT, our results indicate that, the blue-shifts (in the main peaks of the dielectric constant of SiB -BNNT and SO2-SiB -BNNT), and the red-shifts (in the main peaks of the refractive index of SiN -BNNT and SO2-SiN -BNNT) are appeared. Under these conditions, Si-doped BNNT and Si-doped BNNT with SO2 adsorption, the gaps are reduced both for the speculated optical band gaps and the electronic structure band gaps.

  15. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Science.gov (United States)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  16. Electrochemical Protein Cleavage in a Microfluidic Cell with Integrated Boron Doped Diamond Electrodes

    NARCIS (Netherlands)

    van den Brink, Floris T G; Zhang, Tao; Ma, Liwei; Bomer, Johan; Odijk, Mathieu; Olthuis, Wouter; Permentier, Hjalmar P; Bischoff, Rainer; van den Berg, Albert

    2016-01-01

    Specific electrochemical cleavage of peptide bonds at the C-terminal side of tyrosine and tryptophan generates peptides amenable to liquid chromatography-tandem mass spectrometry (LC-MS/MS) analysis for protein identification. To this end we developed a microfluidic electrochemical cell of 160 nL vo

  17. Electrochemical Characteristics and Applications of Boron-Doped Polycrystalline Diamond Film Electrodes

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    ns of Boron-Doped Polycrystalline Diamond Film ElectrodesTX1IntroductionInelectrochemicalstudies,electrodesmadeofcom-monlyused...

  18. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  19. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    Science.gov (United States)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  20. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  1. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Science.gov (United States)

    Lovics, R.; Csik, A.; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  2. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Energy Technology Data Exchange (ETDEWEB)

    Lovics, R.; Csik, A., E-mail: csik@atomki.hu; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO{sub 2} diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  3. Fabrication and Application of High Quality Diamond-coated Tools

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Diamond-coated tools were fabricated using Co-cemented carbide inserts as substrates by the electronically aided hot filament chemical vapor deposition (EACVD). An amount of additive in an acid solution was used to promote the Co etching of the substrate surface. The surface of the WC-Co substrate was decarburized by microwave plasma with Ar-H 2 gas. Effect of the new substrate pretreatment on the adhesion of diamond films was investigated. A boron-doped solution was brushed on the tool surface to diffuse ...

  4. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Di, E-mail: di.yan@anu.edu.au; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  5. Studies on the oxygen precipitation in highly boron doped silicon; Untersuchungen zur Sauerstoffausscheidung in hoch bordotiertem Silicium

    Energy Technology Data Exchange (ETDEWEB)

    Zschorsch, Markus

    2007-12-14

    The aim of this thesis was the getting of new knowledge on the elucidation of the oxygen precipitation in highly doped silicon. In the study of the early phases of the oxygen precipitation boron-oxygen complexes and their kinetics could be indirectly detected. These arise already during the cooling of the crystal and can be destroyed by subsequent temperature processes. The formation of the here as BO assumed species during the cooling after the silicon crystal fabrication could be numerically reproduced. Furthermore the study of early precipitation phases by means of neutron small angle scattering a maximum of the oxygen precipitation at {rho}=9 m{omega}cm. It could be shown that the decreasing of this at increasing boron concentration can be most probably reduced to boron precipitations. Furthermore it could be shown that after a tempering time of 24 hours at 700 C in silicon with {rho}=9 m{omega}cm platelet-shaped precipitates form. By the study of the precipitate growth could be shown that also in this phase the oxygen precipitation in silicon is strongest with a specific resistance of {rho}=9 m{omega}cm. By means of FTIR spectroscopy a new absorption band at a wave number of 1038 cm{sup -1} was found, which could be assigned to a boron species. By different experiments it is considered as probable that at this species it deals with BI respectively B{sub 2}I complexes.

  6. Investigation of Boron-doping Effect on Photoluminescence Properties of CdNb2O6: Eu(3+) Phosphors.

    Science.gov (United States)

    Başak, Ali Sadi; Ekmekçi, Mete Kaan; Erdem, Murat; Ilhan, Mustafa; Mergen, Ayhan

    2016-03-01

    Pure, Eu(3+) - doped and Eu(3+),B(3+) co-doped CdNb2O6 powders have been prepared by a molten salt synthesis method using Li2SO4/Na2SO4 salt mixture as a flux at a relatively low temperatures as compared to solid state reaction. X-ray diffraction patterns of pure CdNb2O6 samples indicated orthorhombic single phase. Photoluminescence investigations of CdNb2O6 samples showed a strong blue emission band centered at 460 nm. For Eu-doped CdNb2O6 samples, the luminescence of Eu(3+) was observed with the host red emission varying with the Eu-doping concentrations. This PL characteristic of the doped samples may be attributed to the energy transfer between Eu(3+) and niobate groups (NbO6). Boron incorporation has remarkably increased the luminescence of Eu(3+)-doped CdNb2O6.

  7. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  8. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

    Science.gov (United States)

    Halpern, Jeffrey M; Martin, Heidi B

    2014-02-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp(2) carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

  9. Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

    Science.gov (United States)

    Teraji, Tokuyuki; Koizumi, Satoshi; Koide, Yasuo; Ito, Toshimichi

    2008-07-01

    The reverse current of lateral-type Schottky diodes fabricated on p-type homoepitaxial diamond was analyzed by changing the distance between Schottky and Ohmic electrodes and the metal materials in the Schottky electrodes. The maximum electric field at breakdown was 0.56 MV cm -1 for the Au Schottky contact and less than 0.26 MV cm -1 for the Al Schottky contact. The breakdown voltage depended on the electrode distance when the diamond surface was revealed in vacuum, whereas the Schottky diodes sustained the applied voltage of 500 V, corresponding to 0.69 MV cm -1, after covering of the diamond surface with an insulating liquid. Diamond surface protection is an indispensable technique for fabrication of high-voltage Schottky diodes based on diamond.

  10. Effect of reaction conditions on methyl red degradation mediated by boron and nitrogen doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Galenda, A., E-mail: galenda@ieni.cnr.it [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy); Crociani, L.; Habra, N. El; Favaro, M. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy); Natile, M.M. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Dipartimento di Scienze Chimiche, Università di Padova, via F. Marzolo, 1 35131 Padova (Italy); Rossetto, G. [CNR-IENI, Istituto per l’Energetica e le Interfasi, Corso Stati Uniti, 4 35127 Padova (Italy)

    2014-09-30

    Highlights: • Boron and/or nitrogen-doped TiO{sub 2} for photocatalytic wastewater treatment. • Methyl red degradation/mineralisation as a function of pH, acids and dopants. • Adsorption time influence on photocatalytic process. • Recovery of worn-out catalyst. - Abstract: Nowadays the employment of renewable and sustainable energy sources, and solar light as main option, becomes an urgent need. Photocatalytic processes received great attention in wastewater treatment due to their cheapness, environmental compatibility and optimal performances. Despite the general low selectivity of the photocatalysts, an accurate optimisation of the operational parameters needs to be carried out in order to maximise the process yield. Because of this reason, the present contribution aims to deepen either the knowledge in boron and/or nitrogen doped TiO{sub 2}-based systems and their employment in methyl red removal from aqueous solutions. The samples were obtained by coprecipitation and characterised by XRD, SEM, BET specific surface area, UV–vis and XPS techniques. The catalytic activity was for the first time carefully evaluated with respect to methyl red photodegradation in different conditions as a function of working pH, counter-ions and pre-adsorption time. An ad-hoc study was performed on the importance of the pre-adsorption of the dye, suggesting that an extended adsorption is useless for the catalyst photoactivity, while a partial coverage is preferable. The photocatalytic tests demonstrate the positive influence of boron doping in photo-activated reactions and the great importance of the operational parameters with respect to the simple methyl red bleaching rather than the overall pollutant mineralisation. It is proved, indeed, that different working pH, acidifying means and substrate pre-adsorption time can enhance or limit the catalyst performances with respect to the complete pollutant degradation rather than its partial breakage.

  11. Efficient Photocatalytic Hydrogen Evolution over Platinum and Boron Co-doped TiO2 Photoatalysts

    Directory of Open Access Journals (Sweden)

    Zhiliang JIN

    2014-12-01

    Full Text Available In this paper, the new photocatalyst, Ptx-/TiO2-yBy was prepared by impregnation method via coupling with a inorganic water splitting system, namely, a ternary system K+,Na+/B4O72- - H2O for hydrogen evolution. The integration process of the preparation for B doping Pt/TiO2 with the significant photocatalytic hydrogen evolution in the ternary system K+,Mg2+/B4O72- - H2O and K+,Na+/B4O72- - H2O were accomplished by impregnation in situ. The photocatalyst Ptx-/TiO2-yBy synthesis and the photocatalytic hydrogen production of the isothermal solubility of the ternary system K+,Mg2+/B4O72- - H2O and K+,Na+/B4O72- - H2O at 25 ºC have been studied. Thus, the present challenge is not only to demonstrate a suitable photocatalytical system that can efficiently produce hydrogen under the borate exsited, but also research that the addition of borate to the suspensions greatly enhanced the stability of the  photocatalysts over semiconductor catalysts.The results show that borate solution is a suitable for B doped TiO2 photocatalysts preparation and a novel photocatalyst Ptx-/TiO2-yBy was successfully prepared by this way. XRD and XPS characterization showed that both anatase and rutile are coexisted and the B is incorporated into the crystal of the TiO2.So the TiO2 can be denoted as TiO2-xBx. The effect of borate on the photocatalytic properties were investigated. The results showed that the amount of hydrogen evolved is enhanced by factors of 4 with the addition of H3BO3 to the ethanol/water reaction solutions. The role of boron anion does not act as a sacrificial electron donors. DOI: http://dx.doi.org/10.5755/j01.ms.20.4.6412

  12. Magnetism of single-walled silicon carbide nanotubes doped by boron, nitrogen and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Maghnaoui, Ahmed [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria); Boufelfel, Ahmed, E-mail: ahboufelfel@gmail.com [Laboratoire de Physique, Universite du 08 mai 45, BP 401, 24000 Guelma (Algeria)

    2012-09-15

    We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X{sub Si}, or the carbon atom X{sub C}, in the unit cell. We found that in the case of one atom B - SiCNT replacing a carbon atom position annotated by B{sub C} exhibits a magnetic moment of 1 {mu}{sub B}/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B{sub Si}), induce a magnetic moment of 0.46 {mu}{sub B}/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N{sub C}) and (N{sub Si}) each case induce a magnetic moment of 1 {mu}{sub B}/cell in armchair (6,6), while N{sub Si} give rise to 0.75 {mu}{sub B}/cell in zigzag (10,0) and no magnetic moment for N{sub C}. In contrast the case of O{sub C} and O{sub Si} did not produce any net magnetic moment in both zigzag and armchair geometries. - Highlights: Black-Right-Pointing-Pointer Calculation scheme the one implemented in the SIESTA. Black-Right-Pointing-Pointer Materials studied SiCNT, B - SiCNT, N - SiCNT and O - SiCNT. Black-Right-Pointing-Pointer Magnetism in single wall SiCNTs when one atom of C or Si is replaced by B or N zigzag (10,0) and armchair (6,6).

  13. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    Science.gov (United States)

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  14. Tailoring of boron-doped MnTe semiconductor-sensitized TiO2 photoelectrodes as near-infrared solar cell devices

    Science.gov (United States)

    Tubtimtae, Auttasit; Hongto, Timakorn; Hongsith, Kritsada; Choopun, Supab

    2014-02-01

    We studied the photovoltaic performance of a new tailoring of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on TiO2 using two-stages of the successive ionic layer adsorption and reaction (SILAR) technique as a photoelectrode. The phase of the boron-doped MnTe and MnTe2 semiconductor as sensitizers were characterized with ˜20-50 nm in diameter. The B-doped MnTe(5) exhibited the best efficiency of 0.04%, compared to that of the undoped sample of 0.006%. In addition, the band gaps of 1.30 and 1.26 eV were determined for the undoped and B-doped MnTe NPs, respectively. The change in the band gap after boron doping was performed due to crystal quality improvement and the larger size of the MnTe NPs, leading to a broader absorption of the sensitizer and a noticeable improvement in the photovoltaic performance. This kind of semiconductor and synthesis procedure can be applied for further improvement in a higher efficiency and more stability in SSCs.

  15. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Science.gov (United States)

    Kada, W.; Kambayashi, Y.; Ando, Y.; Onoda, S.; Umezawa, H.; Mokuno, Y.; Shikata, S.; Makino, T.; Koka, M.; Hanaizumi, O.; Kamiya, T.; Ohshima, T.

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  16. Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films

    Directory of Open Access Journals (Sweden)

    Juergen M. Lackner

    2013-12-01

    Full Text Available Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~25 nm thin films, deposited by vacuum deposition techniques on 50 µm thin polyetheretherketone (PEEK foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source was applied to deposit pure and nitrogen doped diamond-like carbon films, while physical vapor deposition (magnetron sputtering in pulsed DC mode was used for the formation of silicon as well as titanium doped diamond-like carbon films. Silicon oxide films were deposited by radio frequency magnetron sputtering. The results indicate a strong influence of nanoporosity on the oxygen transmission rate for all coating types, while the low content of microporosity (particulates, etc. is shown to be of lesser importance. Due to the low thickness of the foil substrates, being easily bent, the toughness as a measure of tendency to film fracture together with the elasticity index of the thin films influence the oxygen barrier. All investigated coatings are non-pyrogenic, cause no cytotoxic effects and do not influence bacterial growth.

  17. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  18. Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

    Energy Technology Data Exchange (ETDEWEB)

    Tetelbaum, D.I.; Mikhaylov, A.N.; Belov, A.I.; Korolev, D.S.; Shushunov, A.N.; Bobrov, A.I.; Pavlov, D.A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Shek, E.I.; Sobolev, N.A. [Ioffe Physical Technical Institute, St. Petersburg (Russian Federation)

    2015-01-01

    The depth distribution of light-emitting centers of the D1 dislocation-related photoluminescence line (∝ 1.5 μm) in silicon implanted with Si{sup +} ions and annealed at 1100 C in the oxidizing chlorine-containing atmosphere has been investigated by means of the layer-by-layer chemical etching. It is established with the application of cross-sectional transmission electron microscopy that the main contribution to the D1 line is made by the centers located at the depths of up to ∝ 150 nm, i.e. in the region of Si{sup +} ion ranges, whereas the dislocations produced by Si{sup +} implantation and annealing at 1100 C penetrate to the depth of ∝ 1000 nm. Additional boron ion doping with subsequent annealing at 800 C in N{sub 2} atmosphere improves the emission in comparison with the undoped but annealed reference sample, however the additional annealing at 800 C per se results in the photoluminescence weakening. The dependence of the D1 line intensity on boron ion dose is found to be nonmonotonous. The interpretation of the obtained results is given in relation to the key role of selfinterstitials and boron impurity in the formation of radiative and nonradiative centers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Pure and carbon-doped boron phosphide (6,0) zigzag nanotube: A computational NMR study

    Energy Technology Data Exchange (ETDEWEB)

    Arshadi, S., E-mail: sattar_arshadi@yahoo.com [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of); Bekhradnia, A.R., E-mail: abekhradnia@gmail.com [Pharmaceutical Sciences Research Center, Department of Medicinal Chemistry, Mazandaran University of Medical Sciences, Sari (Iran, Islamic Republic of); Department of Chemistry and Molecular Biology, Gothenburg University, Gothenburg (Sweden); Alipour, F.; Abedini, S. [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of)

    2015-11-15

    Calculations were performed for investigation of the properties of the electronic structure of Carbon- Doped Boron Phosphide Nanotube (CDBPNT). Pristine and three models of C-doped structures of (6,0) zigzag BPNT were studied at density functional theory (DFT) in combination with 6-311G* basis set using Gaussian package of program. The calculated parameters reveal that various {sup 11}B and {sup 31}P nuclei are divided into some layers with equivalent electrostatic properties. The electronic structure properties are highly influenced by replacement of {sup 11}B and {sup 31}P atoms by {sup 12}C atoms in pristine model. Furthermore, the HOMO−LUMO gap energy for suggested doped models (I), (II) and (III) were lower than pure BPNT pristine systems. The dipole moment values of models (II) and (III) were decreased to 1.788 and 1.789, respectively while the dipole moments of model (I) were enhanced to 4.373, in compare to pure pristine one (2.586). The magnitude of changes in Chemical Shielding (CS) tensor parameters revealed that the electron density at the site of {sup 31}P was higher than that at the site of {sup 11}B due to carbon doping.

  20. Adsorption of diazinon and hinosan molecules on the iron-doped boron nitride nanotubes surface in gas phase and aqueous solution: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Farmanzadeh, Davood, E-mail: d.farmanzad@umz.ac.ir; Rezainejad, Hamid

    2016-02-28

    Graphical abstract: - Highlights: • Fe doping on boron nitride nanotubes increases their chemical reactivity. • The vdW interactions have a remarkable contribution of total adsorption energies. • FeNBNNTs is better adsorbent for adsorbing mentioned OPs especially hinosan. • Results can be helpful for planning an efficient nanofilter to remove OP pollutants. - Abstract: In this study, the geometric structures and electronic properties of two widely used organophosphorus pesticides, diazinon and hinosan, boron nitride nanotubes (BNNTs) and Fe doped boron nitride nanotubes (FeBNNTs) as adsorbents of these pesticides are studied by density functional theory calculation as well as dispersion correction by Grimme method. The results show that Fe doping in boron nitride nanotubes structures increases the potency of nanotubes to adsorb mentioned pesticides, especially when Fe atom located instead of N atom. Comparing the adsorption energies of diazinon on FeBNNTs with ones for hinosan demonstrate that the adsorption of hinosan is energetically more favorable by FeBNNTs. Assessment of adsorption energies in aqueous solution confirmed significant decrease in their values compared to ones in gaseous phase. However, the adsorption of diazinon and hinosan on both BNNTs and FeBNNTs are exothermic. So, BNNTs and FeBNNTs may be promising candidates as appropriate adsorbents for adsorbing diazinon and hinosan. Also, the results of calculations have revealed that van der Waals interaction energies are remarkably large in adsorption of diazinon and hinosan on all boron nitride nanotubes.

  1. Fabrication and characterization of an all-diamond tubular flow microelectrode for electroanalysis.

    Science.gov (United States)

    Hutton, Laura A; Vidotti, Marcio; Iacobini, James G; Kelly, Chris; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

    2011-07-15

    The development of the first all-diamond hydrodynamic flow device for electroanalytical applications is described. Here alternate layers of intrinsic (insulating), conducting (heavily boron doped), and intrinsic polycrystalline diamond are grown to create a sandwich structure. By laser cutting a hole through the material, it is possible to produce a tubular flow ring electrode of a characteristic length defined by the thickness of the conducting layer (for these studies ∼90 μm). The inside of the tube can be polished to 17 ± 10 nm surface roughness using a diamond impregnanted wire resulting in a coplanar, smooth, all-diamond surface. The steady-state limiting current versus volume flow rate characteristics for the one electron oxidation of FcTMA(+) are in agreement with those expected for laminar flow in a tubular electrode geometry. For dopamine detection, it is shown that the combination of the reduced fouling properties of boron doped diamond, coupled with the flow geometry design where the products of electrolysis are washed away downstream of the electrode, completely eradicates fouling during electrolysis. This paves the way for incorporation of this flow design into online electroanalytical detection systems. Finally, the all diamond tubular flow electrode system described here provides a platform for future developments including the development of ultrathin ring electrodes, multiple apertures for increased current response, and multiple, individually addressable ring electrodes incorporated into the same flow tube.

  2. Further improvement of mechanical and tribological properties of Cr-doped diamond-like carbon nanocomposite coatings by N codoping

    Science.gov (United States)

    Zou, Changwei; Xie, Wei; Tang, Xiaoshan

    2016-11-01

    In this study, the effects of nitrogen codoping on the microstructure and mechanical properties of Cr-doped diamond-like carbon (DLC) nanocomposite coatings were investigated in detail. Compared with undoped DLC coatings, the Cr-DLC and N/Cr-DLC coatings showed higher root-mean-square (RMS) roughness values. However, from the X-ray photoelectron spectroscopy (XPS) and Raman results, the fraction of sp2 carbon bonds of N/Cr-DLC coatings increased with increasing N content, which indicated the graphitization of the coatings. The hardness and elastic modulus of N/Cr-DLC coatings with 1.8 at. % N were about 26.8 and 218 GPa, respectively. The observed hardness increase with N codoping was attributed to the incorporation of N in the C network along with the formation of CrC(N) nanoparticles, as confirmed from the transmission electron microscopy (TEM) results. The internal stress markedly decreased from 0.93 to 0.32 GPa as the N content increased from 0 to 10.3 at. %. Furthermore, N doping significantly improved the high-temperature dry friction behavior of DLC coatings. The friction coefficient of N/Cr-DLC coatings with 8.0 and 10.3 at. % N was kept at about 0.2 during the overall sliding test at 500 °C. These results showed that appropriate N doping could promote the mechanical and tribological properties of Cr-DLC nanocomposite coatings.

  3. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    Directory of Open Access Journals (Sweden)

    Donna H. Wang

    2011-08-01

    Full Text Available Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM. The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA, due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  4. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays.

    Science.gov (United States)

    Varney, Michael W; Aslam, Dean M; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H

    2011-08-15

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  5. Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation

    Science.gov (United States)

    Kasu, Makoto

    2017-01-01

    Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson’s equations.

  6. Studying the effects of the configuration of doped Al atoms on the conductive properties of boron nitride nanotube using density functional theory

    Science.gov (United States)

    Tavangar, Zahra; Hamadanian, Masood; Basharnavaz, Hadi

    2017-02-01

    In this paper, we study the effects of the configuration of two Al atoms doped into the unit cell of (7, 0) BNNTs, on their structural and electronic properties in solid state using density functional theory methods. Also, all possible configurations for Al double doped (7, 0) BNNT were investigated. The results showed that with Al doping, band gap decreased. Furthermore, an impurity state appears near the Fermi level when two Al atoms replace two boron atoms of adjacent layers. Contour plots of charge density distribution showed a protuberance surrounding N and B atoms adjacent to the substitute Al atoms.

  7. Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

    Science.gov (United States)

    Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

    2015-05-01

    Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

  8. First-principles study of metallic carbon nanotubes with boron/nitrogen co-doping

    Institute of Scientific and Technical Information of China (English)

    Chen Ling-Na; Ma Song-Shan; OuYang Fang-Ping; Xiao Jin; Xu Hui

    2011-01-01

    Using the first-principles calculations, we investigate the electronic band structure and the quantum transport properties of metallic carbon nanotubes (MCNTs) with B/N pair co-doping. The results about formation energy show that the B/N pair co-doping configuration is a most stable structure. We find that the electronic structure and the transport properties are very sensitive to the doping concentration of the B/N pairs in MCNTs, where the energy gaps increase with doping concentration increasing both along the tube axis and around the tube, because the mirror symmetry of MCNT is broken by doping B/N pairs. In addition, we discuss conductance dips of the transmission spectrum of doped MCNTs. These unconventional doping effects could be used to design novel nanoelectronic devices.

  9. Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

    Institute of Scientific and Technical Information of China (English)

    Ouyang Fang-Ping; Peng Sheng-Lin; Chen Ling-Na; Sun Shu-Yuan; Xu Hui

    2011-01-01

    By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I-V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.

  10. Effects of Calcination Temperature on Preparation of Boron-Doped TiO2 by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2012-01-01

    Full Text Available Boron-doped TiO2 photocatalyst was prepared by a modified sol-gel method. Being calcinated at temperatures from 300°C to 600°C, all the 3% B-TiO2 samples presented anatase TiO2 phase, and TiO2 crystallite sizes were calculated to be 7.6, 10.3, 13.6, and 27.3 nm, respectively. The samples were composed of irregular particles with rough surfaces in the size range within 3 μm. Ti atoms were in an octahedron skeleton and existed mainly in the form of Ti4+, while the Ti-O-B structure was the main boron existing form in the 3% B-TiO2 sample. When calcination temperature increased from 300°C to 600°C, specific surface area decreased sharply from 205.6 m2/g to 31.8 m2/g. The average pore diameter was 10.53 nm with accumulative pore volume of 0.244 mL/g for the 3% B-TiO2 sample calcinated at 400°C, which performed optimal photocatalytic degradation activity. After 90 min of UV-light irradiation, degradation rate of methyl orange was 96.7% on the optimized photocatalyst.

  11. Use of a Boron Doped Spherical Phantom for the Investigation of Neutron Directional Properties: Comparison Between Experiment and MCNP Simulation

    Energy Technology Data Exchange (ETDEWEB)

    Drake, P.; Kierkegaard, J

    1999-07-01

    A boron doped 19 cm diameter spherical phantom was constructed to give information on the direction of neutrons inside the Ringhals 4 containment. The phantom was made of 40% paraffin and 60% boric acid. 10B contributes 2% of the total phantom weight. The phantom was tested for its angular sensitivity to neutrons. The response was tested with a {sup 252}Cf source and with a Monte Carlo calculation (MCNP) simulating a {sup 252}Cf source. In these investigations the phantom showed a strong directional response. However, there was only a fair correspondence between the experiment and the simulation. The discrepancies are, at least in part, due to the difference in energy and angular response of the dosemeters as compared with the idealised response characteristics in the MCNP calculation. In the MCNP calculation the experimental conditions were not fully simulated. The investigations also showed that the addition of boron to the phantom reduces the leakage of thermalised neutrons from the phantom, and the production of neutron induced photons in the phantom to insignificant levels. (author)

  12. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  13. Effect of reaction conditions on methyl red degradation mediated by boron and nitrogen doped TiO2

    Science.gov (United States)

    Galenda, A.; Crociani, L.; Habra, N. El; Favaro, M.; Natile, M. M.; Rossetto, G.

    2014-09-01

    Nowadays the employment of renewable and sustainable energy sources, and solar light as main option, becomes an urgent need. Photocatalytic processes received great attention in wastewater treatment due to their cheapness, environmental compatibility and optimal performances. Despite the general low selectivity of the photocatalysts, an accurate optimisation of the operational parameters needs to be carried out in order to maximise the process yield. Because of this reason, the present contribution aims to deepen either the knowledge in boron and/or nitrogen doped TiO2-based systems and their employment in methyl red removal from aqueous solutions. The samples were obtained by coprecipitation and characterised by XRD, SEM, BET specific surface area, UV-vis and XPS techniques. The catalytic activity was for the first time carefully evaluated with respect to methyl red photodegradation in different conditions as a function of working pH, counter-ions and pre-adsorption time. An ad-hoc study was performed on the importance of the pre-adsorption of the dye, suggesting that an extended adsorption is useless for the catalyst photoactivity, while a partial coverage is preferable. The photocatalytic tests demonstrate the positive influence of boron doping in photo-activated reactions and the great importance of the operational parameters with respect to the simple methyl red bleaching rather than the overall pollutant mineralisation. It is proved, indeed, that different working pH, acidifying means and substrate pre-adsorption time can enhance or limit the catalyst performances with respect to the complete pollutant degradation rather than its partial breakage.

  14. Photo-stimulated low electron temperature high current diamond film field emission cathode

    Science.gov (United States)

    Shurter; Roger Philips , Devlin; David James , Moody; Nathan Andrew , Taccetti; Jose Martin , Russell; Steven John

    2012-07-24

    An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

  15. Influence of surface properties on the quantum photoyield of diamond photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Foord, J.S.; Wang, J.; Lau, C.H.; Hiramatsu, M.; Vickers, J. [Oxford Univ. (United Kingdom). Physical and Theoretical Chemistry Lab.; Jackman, R.B. [University Coll., London (United Kingdom). Dept. of Electrical and Electronic Engineering

    2001-07-23

    The quantum efficiency and chemical stability of CVD diamond photocathodes has been examined. As-grown or microwave plasma hydrogenated boron-doped diamond films display a quantum photoyield of approximately 0.05% at 190 nm, which degrades gradually as the material is left in ambient atmosphere, due to slow oxidation. Rapid degradation in performance occurs when exposed to atomic or electronically excited oxygen. X-ray photoelectron spectroscopy shows that the yield drops close to zero at around monolayer oxygen coverage, and that the main oxygen species on the surface is hydroxyl or isolated ether linkages. (orig.)

  16. Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

    Science.gov (United States)

    Tan, Xin; Tahini, Hassan A; Smith, Sean C

    2016-12-07

    Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C4N3) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC49, BC7, and BC5, have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

  17. Effects of nitrogen content on structure and electrical properties of nitrogen-doped fluorinated diamond-like carbon films

    Institute of Scientific and Technical Information of China (English)

    XIAO Jian-rong; LI Xin-hai; WANG Zhi-xing

    2009-01-01

    Nitrogen-doped fluorinated diamond-like carbon (FN-DLC) films were prepared on single crystal silicon substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) under different deposited conditions with CF4,CH4 and nitrogen as source gases.The influence of nitrogen content on the structure and electrical properties of the films was studied.The films were investigated in terms of surface morphology,microstructure,chemical composition and electrical properties.Atomic force microscopy (AFM) results revealed that the surface morphology of the films became smooth due to doping nitrogen.Fourier transform infrared absorption spectrometry (FTIR) results showed that amouts of C=N and C≡N bonds increased gradually with increasing nitrogen partial pressure r (r=p(N_2)/p(N_2+CF_4+CH_4)).Gaussian fit results of C 1s and N 1s in X-ray photoelectron spectra (XPS) showed that the incorporation of nitrogen presented mainly in the forms of β-C_3N_4 and a-CN_x (x=1,2,3) in the films.The current-voltage (I-V) measurement results showed that the electrical conductivity of the films increased with increasing nitrogen content.

  18. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    Science.gov (United States)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2017-02-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  19. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    Science.gov (United States)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2016-10-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  20. Theoretical study of interaction between Tacrine and finite-length Al-doped Carbon and Boron nitride Nanotubes: A Semiempirical drug delivery study in thermodynamic view

    Directory of Open Access Journals (Sweden)

    Nasrin Zeighami

    2014-12-01

    Full Text Available In order to extend our previous theoretical calculations that dealt with the thermochemistry of doping the single walled boron nitride nano tubes, BNNTs, and carbon nanotubes ,CNTs, with alminium atoms [1], we have used the AM 1, PM 3, and PM 6 semiempirical methods to investigate the interaction of the tacrine molecule (a drug for the treatment of Alzheimer's disease with the side-walls of aluminum doped boron nitride and carbon nano tubes in thermodynamic views.At first, the frequency calculations were carried out to confirm the stability of the involved structures. In addition, the theoretical thermodynamic study of tacrine adsorption onto the considered nanotubes was performed and the thermodynamic functions such as enthalpy changes, entropy changes and Gibbs free energy changes of the adsorption process were evaluated at different temperatures. Our results suggest the aluminum doped boron nitride nano tubes and alminium doped carbon nano tubes may be considered as the proper carries for the drug delivery of tacrine.

  1. Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2012-01-01

    in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white...... LEDs applications....

  2. Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

    Science.gov (United States)

    Gima, Hiroki; Zkria, Abdelrahman; Katamune, Yūki; Ohtani, Ryota; Koizumi, Satoshi; Yoshitake, Tsuyoshi

    2017-01-01

    Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, π C–N and C=N bonds that easily generate free electrons will be formed at grain boundaries.

  3. Boron-Doped Graphene As Active Electrocatalyst For Oxygen Reduction Reaction At A Fuel-Cell Cathode

    CERN Document Server

    Fazio, Gianluca; Di Valentin, Cristiana

    2016-01-01

    Boron-doped graphene was reported to be the best non-metal doped graphene electrocatalyst for the oxygen reduction reaction (ORR) working at an onset potential of 0.035 V [JACS 136 (2014) 4394]. In the present DFT study, intermediates and transition structures along the possible reaction pathways are determined. Both Langmuir-Hinschelwood and Eley-Rideal mechanisms are discussed. Molecular oxygen binds the positively charged B atom and forms an open shell end-on dioxygen intermediate. The associative path is favoured with respect to the dissociative one. The free energy diagrams along the four-reduction steps are investigated with the methodology by N{\\o}rskov and co. [JPC B 108 (2004) 17886] in both acidic and alkaline conditions. The pH effect on the stability of the intermediates of reduction is analyzed in terms of the Pourbaix diagram. At pH = 14 we compute an onset potential value for the electrochemical ORR of U = 0.05 V, which compares very well with the experimental value in alkaline conditions.

  4. Electro-Explosive Doping of VT6 Titanium Alloy Surface by Boron Carbide

    Science.gov (United States)

    Kobzareva, T. Yu; Gromov, V. E.; Ivanov, Yu F.; Budovskkh, E. A.; Konovalov, S. V.

    2016-09-01

    The studies carried out in this work target detection of changes in the surface layer of titanium alloy VT6 after electro-explosive alloying (EEA) by boron carbide. EEA of VT6 titanium alloy surface is the plasma alloying formed during the electric explosion of foil with the sample powder of boron carbide. Carbon fibers with weight 140 mg were used as an explosive conductor. Sample powder of boron carbide B4C was placed in the area of explosion on the carbon fibers. It was revealed that EEA of the surface layers of titanium alloy samples VT6 leads to the modification of the layer, thickness of which changes from 10 pm to 50 pm. Heterogeneous distribution of alloying elements was found in the treatment zone by the methods of X-ray microanalysis. A significant difference in their concentration in the identified layers leads to difference in their structural and tribological behaviour. It was revealed that after electro-explosive alloying the microhardness of titanium alloy VT6 significantly increases. Electro-explosive alloying leads to the formation of a structure of submicro- and nano-scale level. It allows strength and tribological properties of the treated surface to be increased.

  5. Fullerenes as alternative acceptors by transfer doping of diamond surfaces; Fullerene als alternative Akzeptoren bei der Transferdotierung von Diamantoberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Paul

    2008-06-06

    The topic of this thesis is the fullerene induced surface conductivity on hydrogen terminated diamond. A systematic investigation of C{sub 60}, C{sub 60}F{sub 18}, C{sub 60}F{sub 36} and C{sub 60}F{sub 48} as transfer dopants on hydrogenated diamond has been performed. For C{sub 60}, the doping mechanism is more accurately described as a charge exchange in an extreme type II heterojunction. On the other hand a molecular surface acceptor model that takes the degeneracy of holes and the electric field caused by charge separation into account has been performed for the case of C{sub 60}F{sub 48} in excellent agreement with experimental results. Using in situ Hall Effect measurements of air, C{sub 60}, and C{sub 60}F{sub 48} induced conductivity the sign of the charge carriers that dominate the transport properties was determined. At ambient temperature the hole mobility {mu} as a function of the induced charge carrier density p between p=5.10{sup 10} cm{sup -2} and p=3.10{sup 13} cm{sup -2} was measured. A maximum of the mobility of 130-150 cm{sup 2}V{sup -1}s{sup -1} occurs for p=2.10{sup 1} cm{sup -2}. Temperature dependent Hall measurements between 77 and 350 K show a non-activated, constant charge carrier density on all examinated samples, independently of the kind of adsorbates. On the other hand, both the conductivity and the mobility exhibit temperature dependence, varying with the charge carrier concentration. An essential part of this thesis addressed the investigation and the improvement of the thermal stability of the fullerene layers. In order to achieve the covalent attachment of C{sub 60}F{sub 48} to a hydrogen terminated diamond surface a process for controlled partially hydrolisation was developed. Functionalization with hydroxyl groups could be achieved by using a remote water vapour plasma at room temperature for a few seconds as demonstrated by photoelectron spectroscopy. Prolonged water plasma exposure, however, as well as annealing at temperatures

  6. Tuning electronic properties of carbon nanotubes by Boron and Nitrogen doping

    Science.gov (United States)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and doped carbon nanotubes and NC3-, BC3-, NC- and BC-nanotubes are investigated by using tight binding theory. It was found that applying the external fields and doping change the band gap. The energy gap is reduced by B/N-doping and the reduction value is sensitive to the several parameters such as nanotube diameter and chirality, external field strength, electric field direction, impurity type and concentration. The direct N (B) substitution creates a new band above (below) the Fermi level and leads to creation of n-type (p-type) semiconductor. The external fields modify the band structure and convert the doped nanotube into metal. For both XC and XC3 nanotubes (X=B/N), the gap energy reduction shows identical dependence to electric field and the XC3 nanotubes show more sensitive behavior to electric field rather than XC nanotubes.

  7. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    Science.gov (United States)

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively.

  8. Space-Confined Synthesis of Three-Dimensional Boron/Nitrogen-Doped Carbon Nanotubes/Carbon Nanosheets Line-in-Wall Hybrids and Their Electrochemical Energy Storage Applications

    DEFF Research Database (Denmark)

    Zhu, Shan; Li, Jiajun; Li, Qingfeng;

    2016-01-01

    This research demonstrates a flexible one-pot strategy for fabricating three-dimensional (3D) boron/nitrogen-doped networks of carbon nanotubes(CNTs)/carbon nanosheets "Line-in-Wall" hybrids (LIWNB) based on the space-confined template method. In the synthesis, the high rate of freezing step...... and freeze-dried process enable the CNTs and carbon-heteroatoms sources confined in the limited space of the self-assembled NaCl salts, which are then heat-treated to obtain a B/N-doped network constructed by "Line-in-Wall" type of carbon hybrids. By combining the 3D B/N-doped carbon nanosheets network...... and CNTs in this unique pattern, the LIW-NB integrates advantages of three aspects: first, the doped heteroatoms enhancing electrochemical properties of carbon matrix; second, the warp-proof nanosheets supplying high specific surface area; and the extracted and embedded CNTs serving as electron conductive...

  9. Long period gratings and rocking filters written with a CO 2 laser in highly-birefringent boron-doped photonic crystal fibers for sensing applications

    Science.gov (United States)

    Carvalho, J. P.; Anuszkiewicz, A.; Statkiewicz-Barabach, G.; Baptista, J. M.; Frazão, O.; Mergo, P.; Santos, J. L.; Urbanczyk, W.

    2012-02-01

    In this work, we demonstrate the possibility of fabricating short-length long-period gratings and rocking filters in highly birefringent Photonic Crystal Fiber using a CO 2 laser. In our experiments both kinds of gratings were made in the same Boron doped highly birefringent PCF using similar exposure parameters. We also present the sensing capabilities of both fabricated gratings to temperature, strain and hydrostatic pressure by interrogation of the wavelength shifts at different resonances.

  10. An intensified π-hole in beryllium-doped boron nitride meshes: its determinant role in CO2 conversion into hydrocarbon fuels.

    Science.gov (United States)

    Azofra, Luis Miguel; MacFarlane, Douglas R; Sun, Chenghua

    2016-02-28

    DFT investigations on beryllium-doped boron nitride meshes or sheets (BNs) predict the existence of a very reactive kind of novel material capable of spontaneously reducing the first hydrogenation step in the CO2 conversion mechanism. This impressive behaviour appears as a result of the very deep π-hole generated by the beryllium moieties, and also determines its selectivity towards the production of CH4.

  11. Effective visible light-active boron and europium co-doped BiVO4 synthesized by sol-gel method for photodegradion of methyl orange.

    Science.gov (United States)

    Wang, Min; Che, Yinsheng; Niu, Chao; Dang, Mingyan; Dong, Duo

    2013-11-15

    Eu-B co-doped BiVO4 visible-light-driven photocatalysts have been synthesized using the sol-gel method. The resulting materials were characterized by a series of joint techniques, including XPS, XRD, SEM, BET, and UV-vis DRS analyses. Compared with BiVO4 and B-BiVO4 photocatalysts, the Eu-B-BiVO4 photocatalysts exhibited much higher photocatalytic activity for methyl orange (MO) degradation under visible light irradiation. The optimal Eu doping content is 0.8 mol%. It was revealed that boron and europium were doped into the lattice of BiVO4 and this led to more surface oxygen vacancies, high specific surface areas, small crystallite size, a narrower band gap and intense light absorbance in the visible region. The doped Eu(III) cations can help in the separation of photogenerated electrons. The synergistic effects of boron and europium in doped BiVO4 were the main reason for improving visible light photocatalytic activity.

  12. Synthesis, Characterization, and Tribological Evaluation of TiO2-Reinforced Boron and Nitrogen co-Doped Reduced Graphene Oxide Based Hybrid Nanomaterials as Efficient Antiwear Lubricant Additives.

    Science.gov (United States)

    Jaiswal, Vinay; Kalyani; Umrao, Sima; Rastogi, Rashmi B; Kumar, Rajesh; Srivastava, Anchal

    2016-05-11

    The microwave-synthesized reduced graphene oxide (MRG), boron-doped reduced graphene oxide (B-MRG), nitrogen-doped reduced graphene oxide (N-MRG), boron-nitrogen-co-doped reduced graphene oxide (B-N-MRG), and TiO2-reinforced B-N-MRG (TiO2-B-N-MRG) nanomaterials have been synthesized and characterized by various state-of-the-art techniques, like Raman spectroscopy, powder X-ray diffraction, scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. Furthermore, the tribological properties of prepared nanomaterials as antiwear additives in neutral paraffin oil have been evaluated using a four-ball machine at an optimized additive concentration (0.15% w/v). The tribological parameters, like mean wear scar diameter, coefficient of friction, and wear rates, revealed that these nanomaterials have potential to be developed as environmentally friendly sulfated-ash-, phosphorus-, and sulfur-free antiwear lubricant additives. The friction- and wear-reducing behavior of MRG increased upon successive doping of nitrogen, boron, and both nitrogen and boron. Among these additives, B-N-co-doped MRG shows superior tribological behavior in paraffin base oil. Besides this, the load-carrying properties of B-N-co-doped MRG have significantly improved after its reinforcement with TiO2 nanoparticles. A comparative study of the surface morphology of a lubricated track in the presence of various additives has been assessed by SEM and contact-mode atomic force microscopy. The X-ray photoelectron spectroscopy studies have proved that the excellent lubrication properties of TiO2-B-N-MRG are due to the in situ formation of a tribofilm composed of boron nitride, adsorbed graphene layers, and tribosintered TiO2 nanoparticles during the tribocontact. Being sulfur-, halogen-, and phosphorus-free, these graphene-based nanomaterials act as green antiwear additives, protecting interacting

  13. Gas adsorption, energetics and electronic properties of boron- and nitrogen-doped bilayer graphenes

    Science.gov (United States)

    Fujimoto, Yoshitaka; Saito, Susumu

    2016-10-01

    We study stabilities and electronic properties of several environmental polluting or toxic gas molecules (CO, CO2, NO, and NO2) adsorbed on B and N atoms in bilayer graphene using first-principles electronic-structure calculations. We find that NO and NO2 molecules can be bound chemically on B-doped bilayer graphene with large adsorption energies, while CO and CO2 molecules are not adsorbed chemically on B-doped one. In the case of the N-doped graphene, all four gases do not bind with chemical bonds but adsorb rather physically with small adsorption energies at long distances between gases and graphene. The adsorptions of NO and NO2 molecules on B-doped bilayer graphene induce the acceptor states above the Fermi energy, and we also find that the charge transfer takes place when the NO and the NO2 molecules are adsorbed. Thereby, the B-doped bilayer graphene is expected to be useful for NO and NO2 gas sensor materials.

  14. 硼掺杂对石墨烯量子点发光影响的理论研究%Theoretical Study of the Fluorescence of Graphene Quantum Dots Doped by Boron

    Institute of Scientific and Technical Information of China (English)

    杨丽君

    2016-01-01

    The absorption and emission spectra of graphene quantum dots (GQDs)and boron-doped GQDs were ex-plored by TDDFT method.The calculated results indicate that the doped boron atom can make a high redshift of ab-sorption and emission wavelength of GQDs.The doped boron atom located at the edge of GQDs makes higher red-shift.The doped-boron atom also greatly decreases the absorption and emission intensity of GQDs,which is inde-pendent of the position of boron atom.The molecular orbitals of GQDs and boron-doped GQDs were analyzed.The transition is charge transfer (CT)when boron locates at the edge of GQDs,which is different from the local excita-tion (LE)of GQDs with interior doped boron.%采用含时密度泛函(TDDFT)方法研究了石墨烯量子点(GQDs)和硼掺杂 GQDs 的吸收和发射光谱。计算结果表明,硼掺杂使 GQDs 的吸收和发射光波长红移,硼的位置越靠近 GQDs 边缘,波长红移越多。硼掺杂极大地降低了 GQDs 的吸收和发射光强度,这与掺杂时硼的位置无关。轨道分析表明,硼掺杂在边缘时,GQDs 中电子跃迁的类型为电荷转移跃迁,与硼掺杂在晶格内的局域激发不同。

  15. Effects of glucose doping on the MgB2 superconductors using cheap crystalline boron

    Science.gov (United States)

    Parakkandy, Jafar Meethale; Shahabuddin, Mohammed; Shah, M. Shahabuddin; Alzayed, Nasser S.; Qaid, Salem A. S.; Madhar, Niyaz Ahmad; Ramay, Shahid M.; Shar, Muhammad Ali

    2015-12-01

    We report the effect of glucose (C6H12O6) doping on the structural and electromagnetic properties of MgB2 superconductor fabricated by dry mixing using planetary ball milling. Herein, as-prepared bulk polycrystalline Mg (B1-xCx) 2 samples with different doping levels (x = 0, 2, 4, and 6 at. %) were systematically studied by X-ray diffraction, magnetic and resistivity measurements, and microstructure analysis. When carbon doped, the reduction in critical transition temperature and shrinkage in a-lattice were obviously observed. This resulted in structural distortion of the MgB2 lattice, and thereby, enhanced an impurity scattering. In addition to these, upper critical field and high-field critical current densities were also enhanced. On the other hand, both pinning force and low-field critical current density are decreased. The high field enhancement and low field degradation are due to increase in impurity scattering and decrease in pinning force respectively.

  16. Preparation of Cubic Boron Nitride Coating on WC-Co Substrate by Micro/Nanocrystalline Diamond Film Interlayer%基于微纳米金刚石过渡层的cBN刀具涂层制备

    Institute of Scientific and Technical Information of China (English)

    徐锋; 左敦稳; 张旭辉; 户海峰; 张骋; 王珉

    2013-01-01

    Cubic Boron Nitride(cBN) is a super-hard material, of which hardness is only less than diamond. But it has excellent chemical stability, especially no chemical reaction with ferrous materials. The cBN coating has irreplaceable function in the application of modern cutting tools. Research is carried out on the preparation of cBN coating on YG6 by micro/nanocrystalline diamond (M/NCD) film inter-layer. The micro/nanocrystalline diamond film is deposited in hot filament chemical vapor deposition system and cBN is deposited in radio frequency magnetron sputtering system. The scanning electron microscopy (SEM), Raman, atomic force microscopy(AFM), Fourier transferred infrared(FTIR) and in-denter are used to investigate the content, morphology and adhesion of the coating. The results show that the adhesion of cBN coating on WC-Co by micro/nanocrystalline diamond interlayer is much higher than that by nano diamond interlayer. The moderate bias voltage is important for the cBN film deposition in the magnetron sputtering process.%立方氮化硼(Cubic Boron Nitride,cBN)是仅次于金刚石的超硬材料,比金刚石具有更高的化学稳定性,可以胜任铁系金属的加工.本文在YG6硬质合金上基于微纳米金刚石过渡层开展cBN涂层的制备研究.本文在热丝化学气相沉积系统中制备微纳米金刚石过渡层(Micro/nanocrystalline diamond,M/NCD),在射频磁控溅射系统中制备cBN涂层,并对M/NCD与cBN涂层进行了成分、微观形貌与结合性能的研究.研究结果发现,在硬质合金基体上,M/NCD过渡层的结合性能明显优于NCD过渡层.磁控溅射制备cBN涂层过程中,存在适合cBN沉积的衬底偏压阈值,过高或过低的衬底偏压均不利于cBN含量的提高.

  17. Diamond electronic properties and applications

    CERN Document Server

    Kania, Don R

    1995-01-01

    The use of diamond in electronic applications is not a new idea, but limitations in size and control of properties restricted the use of diamond to a few specialised applications. The vapour-phase synthesis of diamond, however, has facilitated serious interest in the development of diamond-based electronic devices. The process allows diamond films to be laid down over large areas. Both intrinsic and doped diamond films have a unique combination of extreme properties for high speed, high power and high temperature applications. The eleven chapters in Diamond: Electronic Properties and Applications, written by the world's foremost experts on the subject, give a complete characterisation of the material, in both intrinsic and doped forms, explain how to grow it for electronic applications, how to use the grown material, and a description of both passive and active devices in which it has been used with success. Diamond: Electronic Properties and Applications is a compendium of the available literature on the sub...

  18. Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Takagishi, Hideyuki; Shen, Zhongrong; Ohdaira, Keisuke; Shimoda, Tatsuya [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Japan Science and Technology Agency, ALCA, Nomi, Ishikawa, 923-1211 (Japan)

    2015-08-31

    A simple, inexpensive method for fabricating a hydrogenated amorphous silicon (a-Si:H) film using thermal chemical vapor deposition from cyclopentasilane (CPS) at atmospheric pressure with a substrate temperature of 370 °C is described. The reactant gas was generated from liquid CPS by vaporization in the deposition chamber. The vaporized CPS gas was transformed immediately into a-Si:H film on a heated substrate. The a-Si:H films could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaborane, respectively, in the liquid CPS before vaporization. This process allows deposition of doped a-Si:H films of photovoltaic device-quality without the need for handling, storage, or transportation of large amounts of gaseous reactants. - Highlights: • B and P doped a-Si:H films made from liquid materials is presented. • Decaborane and white phosphorus is dissolved in the liquid materials. • A simple, inexpensive method for fabricating a-Si:H films using non-vacuum process. • The doped a-Si:H films with usable quality for photovoltaic devices are deposited.

  19. Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO2 Thin Films

    Science.gov (United States)

    Tran, Quang-Phu; Fang, Jau-Shiung; Chin, Tsung-Shune

    2016-01-01

    Boron-doped tin oxide (BTO) films, 0-5 at.% B, were prepared by sol-gel dip coating on a glass substrate. Dried precursor films were post-annealed at a temperature between 400°C and 750°C for 2 h. The obtained BTO thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV-Vis) spectrometry, a four-point probe, and Hall-effect and Seebeck-effect measurements. Optimal optical transmittance was achieved for post-annealed BTO thin film at 700°C. XRD results show a rutile SnO2 structure with a preferred (110) orientation for all the films. The grain size is 47-21 nm, which reduces with increasing B contents. The optical transmittance is 84.6-88.5% at a wavelength of 550 nm and optical band gap of 3.52-3.75 eV. Electrical resistivity is (3.4-8.2) × 10-3 Ω cm, and figure of merit (0.9-4.3) × 10-3 Ω-1. Carrier concentration is (0.97-7.4) × 1020 cm-3 and mobility (2.5-7.8) cm2 V-1 s-1. BTO film with 4 at.% B shows an optimal combination of properties. Conduction type changes from n- (undoped) to p- (1-4 at.% B), then to n-types (5 at.% B), as evidenced from Hall-effect and Seebeck-effect measurements. This is explained by doping-generated defects and phase separations of Sn3O4 and B2O3.

  20. Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas

    Science.gov (United States)

    Islam, Md. Shofiqul; Mehedi, Ibrahim Mustafa

    2016-04-01

    This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.

  1. Adsorptive Separation and Sequestration of Krypton, I and C14 on Diamond Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Tushar [Univ. of Missouri, Columbia, MO (United States); Loyalka, Sudarsha [Univ. of Missouri, Columbia, MO (United States); Prelas, Mark [Univ. of Missouri, Columbia, MO (United States); Viswanath, Dabir [Univ. of Missouri, Columbia, MO (United States)

    2015-03-31

    The objective of this research proposal was to address the separation and sequestration of Kr and I from each other using nano-sized diamond particles and retaining these in diamond until they decay to the background level or can be used as a byproduct. Following removal of Kr and I, an adsorbent will be used to adsorb and store CO2 from the CO2 rich stream. A Field Enhanced Diffusion with Optical Activation (FEDOA-a large scale process that takes advantage of thermal, electrical, and optical activation to enhance the diffusion of an element into diamond structure) was used to load Kr and I on micron or nano sized particles having a larger relative surface area. The diamond particles can be further increased by doping it with boron followed by irradiation in a neutron flux. Previous studies showed that the hydrogen storage capacity could be increased significantly by using boron-doped irradiated diamond particles. Diamond powders were irradiated for a longer time by placing them in a quartz tube. The surface area was measured using a Quantachrome Autosorb system. No significant increase in the surface area was observed. Total surface area was about 1.7 m2/g. This suggests the existence of very minimal pores. Interestingly it showed hysteresis upon desorption. A reason for this may be strong interaction between the surface and the nitrogen molecules. Adsorption runs at higher temperatures did not show any adsorption of krypton on diamond. Use of a GC with HID detector to determine the adsorption capacity from the breakthrough curves was attempted, but experimental difficulties were encountered.

  2. Sintering of nano crystalline silicon carbide by doping with boron carbide

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-06-01

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from 6H to 4H was observed.

  3. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    G. A. Nemnes

    2012-01-01

    Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

  4. Formation of precipitates in heavily boron doped 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Linnarsson, M.K. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden)]. E-mail: marga@kth.se; Janson, M.S. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden); Nordell, N. [Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box E229, SE-164 40 Kista-Stockhom (Sweden); Wong-Leung, J. [Australian National University, Department of Electronics Material Engineering, Research School of Physical Sciences and Engineering, Canberra, ACT 0200 (Australia); Schoener, A. [ACREO AB, P.O. Box E236, SE-164 40 Kista-Stockholm (Sweden)

    2006-05-30

    Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 deg. C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B{sub 4}C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10{sup 22} exp(-1.4 eV/k {sub B} T) cm{sup -3} over the studied temperature range.

  5. Lithium decoration of three dimensional boron-doped graphene frameworks for high-capacity hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yunhui; Meng, Zhaoshun; Liu, Yuzhen; You, Dongsen; Wu, Kai; Lv, Jinchao; Wang, Xuezheng; Deng, Kaiming; Lu, Ruifeng, E-mail: dewei@ujs.edu.cn, E-mail: rflu@njust.edu.cn [Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094 (China); Rao, Dewei, E-mail: dewei@ujs.edu.cn, E-mail: rflu@njust.edu.cn [Institute for Advanced Materials, Jiangsu University, Zhenjiang 212013 (China)

    2015-02-09

    Based on density functional theory and the first principles molecular dynamics simulations, a three-dimensional B-doped graphene-interconnected framework has been constructed that shows good thermal stability even after metal loading. The average binding energy of adsorbed Li atoms on the proposed material (2.64 eV) is considerably larger than the cohesive energy per atom of bulk Li metal (1.60 eV). This value is ideal for atomically dispersed Li doping in experiments. From grand canonical Monte Carlo simulations, high hydrogen storage capacities of 5.9 wt% and 52.6 g/L in the Li-decorated material are attained at 298 K and 100 bars.

  6. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  7. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  8. A computational investigation of boron-doped chromium and chromium clusters by density functional theory

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The geometries,stabilities and electronic properties of Crn and CrnB(n=2-9) clusters have been systematically investigated by density functional theory.The results suggest that the lowest energy structures for CrnB clusters can be obtained by substituting one Cr atom in Crn+1 clusters with B atom.The geometries of CrnB clusters are similar to that of Crn+1 clusters except for local structural distortion.The second-order difference and fragmentation energy show Cr4,Cr6,Cr8,Cr3B,Cr5B and Cr8B cluster are the most stable among these studied clusters.The impurity B increases the stabilities of chromium cluster.When B is doped on the Crn clusters,cluster geometry does dominate positive role in enhancing their stability.The doped B atom does not change the coupling way of the Cr site in Crn clusters,but breaks the symmetry and the Cr atoms are no longer equivalent.The doped B atom increases the total magnetic moments of Crn in most cases.

  9. Characterisation of irradiation damage and dopant distribution in synthetic diamonds by luminescence micro-spectroscopy

    CERN Document Server

    Charles, S J

    2002-01-01

    ground and two excited states. The lower energy excited state has a slow rate of decay and the second, higher energy excited state, which is thermally populated, has a high rate of decay to the ground state. The higher energy excited state has a spectrum with a local mode and the centre is metastably enhanced by exposure to UV light. DBI is not dependent on the isotope of boron used to elope the diamonds. The lines at 650.2 nm and 667.8 nm also come from the same centre as each other, designated DB2. The CVD B-doped diamond samples showed changes in boron level by approximately an order of magnitude on scales smaller than 5 mu m. These differences in boron level are due to different surface facet orientations of the grains that comprise the sample, and different facets have different rates of uptake of boron during growth. A simple, qualitative, way of showing the differences in boron level has been shown by using cathodoluminescence (CL) topography, which agrees with results from UV CL spectroscopy. Raman sp...

  10. Lanthanum and boron co-doped BiVO4 with enhanced visible light photocatalytic activity for degradation of methyl orange

    Institute of Scientific and Technical Information of China (English)

    王敏; 车寅生; 牛超; 党明岩; 董多

    2013-01-01

    BiVO4 photocatalysts co-doped with La and B were prepared by sol-gel method using citric acid as chelate. The samples were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), Bru-mauer-Emmett-Teller (BET), UV-Vis diffuse reflectance spectra (DRS) and the photocatalytic activity was investigated by photo-catalytic degradation of methyl orange (MO). The results showed that boron and lanthanum ions incorporated into the lattice of BiVO4, and co-doping led to more surface oxygen vacancies, high specific surface areas, small crystallite size, narrow band gap and intense light absorbance in visible region. And the doped La(III) ions could help the separation of photogenerated electrons. Com-pared with BiVO4 and B-BiVO4, the photocatalytic activity of La-B co-doped BiVO4 was remarkably improved due to the synergistic effects of the co-doped ions. The degradation rate of MO in 60 min was 98.4%when La doping content was 0.05 mol.%, which was much higher than that of pure BiVO4(20%) and B-BiVO4(37%).

  11. Comparison between aluminium and boron-doped junction termination extensions for high voltage 6H-SiC planar bipolar diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ortolland, S.; Locatelli, M.L.; Planson, D.; Chante, J.P. [CEGELY, INSA Lyon, Villeurbanne (France); Senes, A. [Schneider Electric S.A., Centre Telemecanique, Nanterre (France)

    1998-08-01

    Recent improvements in silicon carbide (SiC) substrate and epilayer quality have allowed to fabricate devices with high voltage blocking capabilities. The mesa structure is usually used as edge termination for power SiC diodes but different problems with the etching and the passivation remain. Thus we design, realise and characterise p{sup +}nn{sup +} structure with a planar edge termination, the idea is to create a lateral extension of the junction (JTE) by implanting boron or aluminum atoms around the Al-doped p{sup +} implanted emitter. Medici software was used to optimise the geometry of the junction protection. This paper consists in describing this kind of diodes and comparing electrical characteristics of bipolar diodes with a boron- or aluminium-implanted JTE. (orig.) 8 refs.

  12. Potentiometric application of boron- and phosphorus-doped glassy carbon electrodes

    Directory of Open Access Journals (Sweden)

    ZORAN V. LAUSEVIC

    2001-03-01

    Full Text Available Acomparative study was carried out of the potentiometric application of boronand phosphorus-doped and undoped glassy carbon samples prepared at the same heat treatment temperature (HTT 1000°C. The electrochemical activities of the obtained electrode materials were investigated on the example of argentometric titrations. It was found that the electrochemical behaviour of the doped glassy carbon samples are very similar to a Sigri (undoped glassy carbon sample (HTT 2400°C. The experiments showed that the potentiometric response depends on the polarization mode, the nature of the sample, the pretreatment of the electrode surface, and the nature of the supporting electrolyte. The amounts of iodide, bromide, and of chloridewere determined to be 1.27 mg, 0.80 mg and 0.54 mg, respectively, with a maximum relative standard deviation of less than 1.1%. The obtained results are in good agreement with the results of comparative potentiometric titrations using a silver indicator electrode. The titrationmethod was applied to the indirect determination of pyridoxine hydrochloride, i.e., vitamin B6.

  13. Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

    Directory of Open Access Journals (Sweden)

    Kang Xia

    2014-03-01

    Full Text Available Doping is an effective approach that allows for the intrinsic modification of the electrical and chemical properties of nanomaterials. Recently, a graphene and carbon nanotube hybrid structure (GNHS has been reported, which extends the excellent properties of carbon-based materials to three dimensions. In this paper, we carried out a first-time investigation on the tensile properties of the hybrid structures with different dopants. It is found that with the presence of dopants, the hybrid structures usually exhibit lower yield strength, Young’s modulus, and earlier yielding compared to that of a pristine hybrid structure. For dopant concentrations below 2.5% no significant reduction of Young’s modulus or yield strength could be observed. For all considered samples, the failure is found to initiate at the region where the nanotubes and graphene sheets are connected. After failure, monatomic chains are normally observed around the failure region. Dangling graphene layers without the separation of a residual CNT wall are found to adhere to each other after failure with a distance of about 3.4 Å. This study provides a fundamental understanding of the tensile properties of the doped graphene–nanotube hybrid structures, which will benefit the design and also the applications of graphene-based hybrid materials.

  14. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Greg M. Swain, PI

    2009-03-10

    The DOE-funded research conducted by the Swain group was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder. (Note: All potentials are reported versus Ag/AgCl (sat'd KCl) and cm{sup 2} refers to the electrode geometric area, unless otherwise stated).

  15. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  16. Modeling of helium bubble nucleation and growth in neutron irradiated boron doped RAFM steels

    Energy Technology Data Exchange (ETDEWEB)

    Dethloff, Christian, E-mail: christian.dethloff@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gaganidze, Ermile [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Svetukhin, Vyacheslav V. [Ulyanovsk State University, Leo Tolstoy Str. 42, 432970 Ulyanovsk (Russian Federation); Aktaa, Jarir [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2012-07-15

    Reduced activation ferritic/martensitic (RAFM) steels are promising candidates for structural materials in future fusion technology. In addition to other irradiation defects, the transmuted helium is believed to strongly influence material hardening and embrittlement behavior. A phenomenological model based on kinetic rate equations is developed to describe homogeneous nucleation and growth of helium bubbles in neutron irradiated RAFM steels. The model is adapted to different {sup 10}B doped EUROFER97 based heats, which already had been studied in past irradiation experiments. Simulations yield bubble size distributions, whereby effects of helium generation rate, surface energy, helium sinks and helium density are investigated. Peak bubble diameters under different conditions are compared to preliminary microstructural results on irradiated specimens. Helium induced hardening was calculated by applying the Dispersed Barrier Hardening model to simulated cluster size distributions. Quantitative microstructural investigations of unirradiated and irradiated specimens will be used to support and verify the model.

  17. Electrolyzing synthesis of boron-doped graphene quantum dots for fluorescence determination of Fe(3+) ions in water samples.

    Science.gov (United States)

    Chen, Li; Wu, Chuanli; Du, Pan; Feng, Xiaowei; Wu, Ping; Cai, Chenxin

    2017-03-01

    This work reports a facile electrolyzing method to synthesize boron-doped graphene quantum dots (BGQDs) and uses the BGQDs as a fluorescent probe to determine Fe(3+) ion levels in water samples. The BGQDs were produced by oxidizing graphite in an aqueous borax solution at pH 7; then, the borate solution was filtered with BGQDs, and the borate was dialyzed from the filtrate, leaving a solution of BGQDs in water. The amount of the B in the BGQDs can be adjusted by changing the concentration of borax used for the electrolyte. The excitation wavelength- and B amount-dependent fluorescence characteristics of BQGDs were studied. The fluorescence intensity of the BGQDs is measurable in real time, and its quenching is very sensitive to the concentration of Fe(3+) ions in the system but not to other possible coexisting metal ions. The fluorescence quenching mechanism of Fe(3+) ions to BGQDs is studied and explained based on electrochemical voltammetry and DFT simulations. The analytical signal, which is defined as F0/F, where F0 and F are the fluorescence intensities of the BGQDs before and after interaction with Fe(3+) ions, respectively, displays a good linear relationship in the Fe(3+) ion concentration range of 0.01-100µm with a correlation coefficient of 0.999 and a limit of detection (LOD) of ~(0.005±0.001) μM. The LOD value is much lower than the water quality standards for Fe(3+) ions (0.3ppm, ~5.36µm) in drinking water suggested by the WHO (World Health Organization) and EPA (U.S. Environmental Protection Agency), implying that this method has great potential for applications in real sample assays. For example, the determination of the Fe(3+) ion levels in three water samples (tap water, groundwater, and lake water) gives approximately the same results as those determined by the EPA-recommended AAS (atomic adsorption spectroscopy) method.

  18. SINTERING MECHANISM OF PURE AND CARBON_DOPED BORON CARBIDE%纯B4C和掺碳B4C的烧结机制

    Institute of Scientific and Technical Information of China (English)

    尹邦跃; 王零森; 方寅初

    2001-01-01

    Sintering densificaton process of pure and carbon_doped boron carbide powders with 0.42 μm median particle size were studied. Their sintering kinetic equations were obtained according to the influence of sintering temperature and holding time on linear shrinkage rate. The sintering mechanisms were investigated by comparing the characteristic exponent n. It is deduced that the main sintering mechanisms shill be volume diffusion and grain boundary diffusion for pure boron carbide and grain boundary diffusion for carbon_doped boron carbide showing activated sintering. The relative density of the carbon_doped B4C sintered at 2 160 ℃ for 45 min is more than 90%. Apart from those dissolved in the sintered boron carbide, the rest of the added carbon is in the form of free carbon, no new phase formed. Carbon_doping also result in a great decrease of B4C grain size.%研究了中位粒径为0.42 μm的纯B4C和掺碳B4C粉末的烧结致密化过程. 根据烧结温度和保温时间对线收缩率的影响,得出了它们的烧结动力学方程;由特征指数n值对比研究了它们的烧结致密化机制. 纯B4C的烧结致密化机制为体扩散和晶界扩散,而掺碳B4C的烧结机制主要为晶界扩散,因此,掺碳对B4C起到了活化烧结的作用. 在2 160 ℃烧结45 min,掺碳B4C烧结后相对密度大于90%. 掺入的碳除了固溶于B4C晶格中之外,其它均以游离石墨形式存在,不形成新相. 掺碳还导致B4C晶粒尺寸大大减小.

  19. Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

    Directory of Open Access Journals (Sweden)

    G. Baskaran

    2006-01-01

    Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

  20. Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, Jerome, E-mail: jerome.steinhauser@oerlikon.com [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Meyer, Stefan; Schwab, Marlene; Fay, Sylvie; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Kroll, U.; Borrello, D. [Oerlikon Solar-Lab, 2000 Neuchatel (Switzerland)

    2011-10-31

    The stability in humid environment of low pressure chemical vapor deposited boron doped zinc oxide (LPCVD ZnO:B) used as transparent conductive oxide in thin film silicon solar cells is investigated. Damp heat treatment (exposure to humid and hot atmosphere) induces a degradation of the electrical properties of unprotected LPCVD ZnO:B layers. By combining analyses of the electrical and optical properties of the films, we are able to attribute this behavior to an increase of electron grain boundary scattering. This is in contrast to the intragrain scattering mechanisms, which are not affected by damp heat exposure. The ZnO stability is enhanced for heavily doped films due to easier tunneling through potential barrier at grain boundaries.

  1. Reactivity of boron- and nitrogen-doped carbon nanotubes functionalized by (Pt, Eu) atoms toward O2 and CO: A density functional study

    Science.gov (United States)

    Abdel Aal, S.

    2016-01-01

    The adsorption behavior and electronic properties of CO and O2 molecules at the supported Pt and Eu atoms on (5,5) armchair SWCNT have been systematically investigated within density functional theory (DFT). Fundamental aspects such as adsorption energy, natural bond orbital (NBO), charge transfer, frontier orbitals and the projected density of states (PDOS) are elucidated to analyze the adsorption properties of CO and O2 molecules. The results reveal that B- and N-doping CNTs can enhance the binding strength and catalytic activity of Pt (Eu) anchored on the doped-CNT, where boron-doping is more effective. The electronic structures of supported metal are strongly influenced by the presence of gases. After adsorption of CO and O2, the changes in binding energy, charge transfer and conductance may lead to the different response in the metal-doped CNT-based sensors. It is expected that these results could provide helpful information for the design and fabrication of the CO and O2 sensing devices. The high catalytic activity of Pt supported at doped-CNT toward the interaction with CO and O2 may be attributed to the electronic resonance particularly among Pt-5d, CO-2π* and O2-2π* antibonding orbitals. In contrast to the supported Eu at doped-CNT, the Eu atom becomes more positively charged, which leads to weaken the CO adsorption and promote the O2 adsorption, consequently enhancing the activity for CO oxidation and alleviating the CO poisoning of the europium catalysts. A notable orbital hybridization and electrostatic interaction between these two species in adsorption process being an evidence of strong interaction. The electronic structure of O2 adsorbed on Eu-doped CNT resembles that of O2-, therefore the transferred charge weakens the O-O bonds and facilitates the dissociation process, which is the precondition for the oxygen reduction reaction (ORR).

  2. Interaction between F2 gas with the pristine and 3C-doped(4, 4 armchair boron phosphide nanotubes: a DFT study

    Directory of Open Access Journals (Sweden)

    M Rezaei-Sameti

    2015-12-01

    Full Text Available In this research, the structure, quantum and NQR (Nuclear quadrupole resonanceparameters of F2 gas adsorption on the pristine and 3C-doped (4,4 armchair models of boron phosphide nanotubes (BPNTs have been investigated in the framework of density functional theory. For this purpose, at the first step, four models for F2 adsorption on the inner and outer surfaces of pristine and 3C-doped BPNTS are considered and then all structures are optimized by using Gaussian 03 program package. The optimized structures are used to calculate the quantum and NQR parameters. The calculated results reveal that the adsorption energy of pristine and 3C-doped models of BPNTs are exothermic and adsorption process is a physisorption process due to the weak Van der Waals interaction. The substitution of three carbons with three B atoms of nanotube decreases significantly the adsorption energies. The F2 adsorption and 3C-doping decrease the band gap, global hardness, and ionization potential of the pristine BPNTs. The calculated NQR parameters of all the models show that CQ and &etaQ values of the first layer are larger than those of the other layers.

  3. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  4. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  5. Tl and OSL dosimetry of diamond films CVD pure and unpurified with boron-carbon; Dosimetria Tl y OSL de peliculas de diamante CVD puras e impurificadas con boro-carbono

    Energy Technology Data Exchange (ETDEWEB)

    Melendrez, R.; Pedroza M, M.; Chernov, V.; Ochoa N, J.D.; Bernal, R.; Barboza F, M. [CIF, UNISON, A.P. 5-088, 83190 Hermosillo, Sonora (Mexico); Castaneda, B. [Departamento de Fisica, Universidad de Sonora, Apdo. Postal 1626, Hermosillo, Sonora (Mexico); Goncalves, J.A.N.; Sandonato, G.M. [Laboratorio Associado de Plasma, Instituto Nacional de Pesquisas Espaciais C.P. 515- 12201 -970, Sao Jose dos Campos, SP (Brazil); Cruz Z, E. [Instituto de Ciencias Nucleares, UNAM, Apdo. Postal 70-543, 04510 Mexico D.F. (Mexico); Preciado F, S.; Cruz V, C.; Brown, F. [Departamento de Investigacion en Polimeros y Materiales de la Universidad de Sonora, Apdo. Postal 130, 83000 Hermosillo, Sonora (Mexico); Schreck, M. [Universitaet Augsburg, Institut fuer Physik D-86135 Augsburg (Germany)

    2004-07-01

    The diamond is a material that possesses extreme physical properties, such as its hardness to the radiation, its low chemical reactivity besides its equivalence to the human tissue, which qualify him as an ideal material for radiation dosimetry. In this work, it was studied the thermal and optically stimulated response (Tl and OSL) of polycrystalline diamond films grown by the technique of CVD pure and contaminated with Boron-carbon (B/C) with the intention of characterizing their efficiency like a dosemeter for radiation in a range of 0 - 3000 Gy. For the case of the films without impurities, the Tl curve presents four main peaks, two of them in an interval of temperatures of 150-200 C and other two additional around of 250-400 C. The dependence of the response of integrated Tl and that of OSL always maintained a lineal relationship with the exhibition dose up to 100 Gy. The behavior of the films contaminated with B/C (2000 - 20000 ppm) was established through experiments that involved the signal of OSL and their relationship with the Tl response. It was found that this processes are correlated, since the electrons caught in the traps of low temperature (50 - 250 C) of the Tl they are the electrons that recombining with more probability to provide the signal of OSL. According to these results it is possible to propose the diamond films as a good candidate for dosimetry to, using the traditional technique of Tl so much as well as the but recent of OSL. (Author)

  6. Biological applications of nanocrystalline diamond

    OpenAIRE

    Williams, Oliver; Daenen, Michael; Haenen, Ken

    2007-01-01

    Nanocrystalline diamond films have generated substantial interest in recent years due to their low cost, extreme properties and wide application arena. Diamond is chemically inert, has a wide electrochemical window and is stable in numerous harsh environments. Nanocrystalline diamond has the advantage of being readily grown on a variety of substrates at very low thickness, resulting in smooth conformal coatings with high transparency. These films can be doped from highly insulating to metalli...

  7. Effects of bimetallic doping on small cyclic and tubular boron clusters: B7M2 and B14M2 structures with M = Fe, Co.

    Science.gov (United States)

    Pham, Hung Tan; Nguyen, Minh Tho

    2015-07-14

    Using density functional theory with the TPSSh functional and the 6-311+G(d) basis set, we extensively searched for the global minima of two metallic atoms doped boron clusters B6M2, B7M2, B12M2 and B14M2 with transition metal element M being Co and Fe. Structural identifications reveal that B7Co2, B7Fe2 and B7CoFe clusters have global minima in a B-cyclic motif, in which a perfectly planar B7 is coordinated with two metallic atoms placed along the C7 axis. The B6 cluster is too small to form a cycle with the presence of two metals. Similarly, the B12 cluster is not large enough to stabilize the metallic dimer within a double ring 2 × B6 tube. The doped B14M2 clusters including B14Co2, B14Fe2 and B14CoFe have a double ring 2 × B7 tubular shape in which one metal atom is encapsulated by the B14 tube and the other is located at an exposed position. Dissociation energies demonstrate that while bimetallic cyclic cluster B7M2 prefers a fragmentation channel that generates the B7 global minimum plus metallic dimer, the tubular structure B14M2 tends to dissociate giving a bimetallic cyclic structure B7M2 and a B@B6 cluster. The enhanced stability of the bimetallic doped boron clusters considered can be understood from the stabilizing interactions between the anti-bonding MOs of metal-metal dimers and the levels of a disk aromatic configuration (for bimetallic cyclic structures), or the eigenstates of the B14 tubular form (in case of bimetallic tubular structure).

  8. Growth of diamond layers on diamond and cBN seeds using iron carbide under high pressure and high temperature

    CERN Document Server

    Li Xun; Hao Zhao Yin; LiuPeng; Li Musen; Zou Guang Tian; Cheng Shu Yu; Cheng Kai Jia

    2002-01-01

    Iron carbide without any graphite was studied under high pressure and high temperature (HPHT); diamond layers were obtained both on diamond and on cubic boron nitride seeds at 5.5 GPa and 1700-1750 K. The results showed that transition-metal carbide was the main intermediate in the course of the transformation from graphite to diamond under HPHT.

  9. PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

    Science.gov (United States)

    Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

    2009-09-01

    diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no

  10. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method.

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-13

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm(2) and 0.016 mA/cm(2), respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  11. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  12. Synthesis and electrical prop erties study of Ib typ e diamond single crystal co-dop ed with b oron and hydrogen under HPHT conditions%硼氢协同掺杂Ib型金刚石大单晶的高温高压合成与电学性能研究∗

    Institute of Scientific and Technical Information of China (English)

    李勇; 李宗宝; 宋谋胜; 王应; 贾晓鹏; 马红安

    2016-01-01

    Diamond is well known for its excellent properties, such as its hardness, high thermal conductivity, high electron and hole mobility, high breakdown field strength and large band gap (5.4 eV), which has been extensively used in many fields. However, its application in semiconductor area needs to be further understood, because it is irreplaceable by conventional semiconductor materials, especially in the extreme working conditions. In order to obtain diamond semiconductor with excellent electrical performances, diamond crystals co-doped with boron (B) and hydrogen (H) are synthesized in an FeNi-C system by temperature gradient growth at pressure 6.0 GPa and temperature 1600 K. Fourier infrared spectra measurements displayed that H is the formation of sp3 CH2-antisymmetric and sp3 -CH2-symmetric vibrations in the obtained diamond. Furthermore, the corresponding absorption peaks of H element are located at 2920 cm−1 and 2850 cm−1, respectively. Hall effects measurements demonstrated that the co-doped diamond exhibited that p-type material semiconductor performance, and the conductivity of the co-doped diamond is significantly enhanced comparing tocompared with the conductivity of the B-doping diamond. The results indicated that the Hall mobility mobilities is nearly equivalent between B-doped and co-doped diamond crystals are nearly equivalent, while the concentrations of the carriers and conductivity of the co-doped diamonds are higher than those of the B-doped diamond crystals. It is also noticed that the nitrogen concentration of the co-doped diamond decreases obviously, when the H and B are introduced into the diamond structure. Additionally, the change of the conductivity is investigated by first-principles calculation. In the B-doping diamond, two impurity levels are located in the forbidden band with small gaps. These impurity states above the Fermi level can trap the photo-excited electrons, while those below Fermi level can trap the photo

  13. Density functional theory study of elemental mercury adsorption on boron doped graphene surface decorated by transition metals

    Energy Technology Data Exchange (ETDEWEB)

    Jungsuttiwong, Siriporn, E-mail: siriporn.j@ubu.ac.th [Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Ubon Ratchathani University, Ubon Ratchathani 34190 (Thailand); Wongnongwa, Yutthana [Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Ubon Ratchathani University, Ubon Ratchathani 34190 (Thailand); Namuangruk, Supawadee [National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Klong Luang, Pathum Thani 12120 (Thailand); Kungwan, Nawee [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Promarak, Vinich [Department of Material Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Rayong 21210 (Thailand); Kunaseth, Manaschai, E-mail: manaschai@nanotec.or.th [National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Klong Luang, Pathum Thani 12120 (Thailand)

    2016-01-30

    Graphical abstract: Decoration of Pd{sub 4}-A (square planar) on B-doped graphene significantly promotes Hg{sup 0} adsorption, a single site of Pd{sub 4} cluster on BDG could strongly adsorb up to six Hg atoms. - Highlights: • Transition metal atom and cluster binds strongly on B-doped graphene surface. • Decoration of transition metal on B-doped graphene significantly promotes Hg{sup 0} adsorption. • Adsorption strength of Hg{sup 0} atom on metal decorated B-doped graphene: Pd > Pt > Ru > W > Cu. • One site decorated Pd4 cluster adsorbed Hg{sup 0} strongly up to six atoms.

  14. Low-Temperature Softening Due to Vacancy Orbital with Γ8 Quartet Ground State in Boron-Doped Floating Zone Silicon

    Science.gov (United States)

    Baba, Shotaro; Akatsu, Mitsuhiro; Mitsumoto, Keisuke; Komatsu, Satoru; Horie, Kunihiko; Nemoto, Yuichi; Yamada-Kaneta, Hiroshi; Goto, Terutaka

    2013-08-01

    We have carried out low-temperature ultrasonic measurements using shear-mode ultrasound to clarify the quantum state of a vacancy orbital in boron-doped silicon grown by the floating zone (FZ) method. The elastic constants (C11-C12)/2 and C44 of the transverse mode exhibit considerable softening below 2 and 5 K down to the base temperature of 30 mK, respectively. The elastic constant C44 measured by the three ultrasonic modes (kx,uy), (kz,ux), and (kx,uz) shows the different magnetic field dependences among the configurations under applied magnetic fields along the z-axis. The elastic softening and the magnetic field dependence of the elastic constants are accounted for by the quadrupole susceptibility based on the energy level scheme of the vacancy orbital with a Γ8 quartet ground state and Γ7 doublet excited state located at an energy of 1 K. The difference in C44 between the two ultrasonic modes (kz,ux) and (kx,uz) at fields along the z-axis indicates that the Γ8 quartet ground state is slightly split by local strain in the silicon sample. The quantum state of the vacancy orbital is expected to be sensitive to strain because of the extremely large quadrupole-strain coupling energy of gΓ≈ 105 K due to the extensively spreading orbital radius of r≈ 1 nm. The differences in variation of the low-temperature softening and magnetic field dependence among eight samples cut out from different locations of the present boron-doped FZ silicon ingot evidence the inhomogeneous distribution of the vacancy concentration.

  15. Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications.

    Energy Technology Data Exchange (ETDEWEB)

    Swain; Greg M.

    2009-04-13

    The original funding under this project number was awarded for a period 12/1999 until 12/2002 under the project title Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications. The project was extended until 06/2003 at which time a renewal proposal was awarded for a period 06/2003 until 06/2008 under the project title Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes. The work under DE-FG02-01ER15120 was initiated about the time the PI moved his research group from the Department of Chemistry at Utah State University to the Department of Chemistry at Michigan State University. This DOE-funded research was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder.

  16. Endo-Fullerene and Doped Diamond Nanocrystallite Based Models of Qubits for Solid-State Quantum Computers

    Science.gov (United States)

    Park, Seongjun; Srivastava, Deepak; Cho, Kyeongjae; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Models of encapsulated 1/2 nuclear spin H-1 and P-31 atoms in fullerene and diamond nanocrystallite, respectively, are proposed and examined with ab-initio local density functional method for possible applications as single quantum bits (qubits) in solid-state quantum computers. A H-1 atom encapsulated in a fully deuterated fullerene, C(sub 20)D(sub 20), forms the first model system and ab-initio calculation shows that H-1 atom is stable in atomic state at the center of the fullerene with a barrier of about 1 eV to escape. A P-31 atom positioned at the center of a diamond nanocrystallite is the second model system, and 3 1P atom is found to be stable at the substitutional site relative to interstitial sites by 15 eV, Vacancy formation energy is 6 eV in diamond so that substitutional P-31 atom will be stable against diffusion during the formation mechanisms within the nanocrystallite. The coupling between the nuclear spin and weakly bound (valance) donor electron coupling in both systems is found to be suitable for single qubit applications, where as the spatial distributions of (valance) donor electron wave functions are found to be preferentially spread along certain lattice directions facilitating two or more qubit applications. The feasibility of the fabrication pathways for both model solid-state qubit systems within practical quantum computers is discussed with in the context of our proposed solid-state qubits.

  17. Diamond based light-emitting diode for visible single-photon emission at room temperature

    Science.gov (United States)

    Lohrmann, A.; Pezzagna, S.; Dobrinets, I.; Spinicelli, P.; Jacques, V.; Roch, J.-F.; Meijer, J.; Zaitsev, A. M.

    2011-12-01

    Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

  18. Electronic Properties of Boron and Silicon Doped (10, 0 Zigzag Single-Walled Carbon Nanotube upon Gas Molecular Adsorption: A DFT Comparative Study

    Directory of Open Access Journals (Sweden)

    P. A. Gowri sankar

    2013-01-01

    Full Text Available We have performed a comparative study of nine predominant gas molecules (H2, H2O, O2, CO, CO2, NO, NO2, NH3, and CH3OH adsorption property on the top surface of the (10, 0 zigzag single-walled pristine Carbon nanotube (C-CNT, Boron doped carbon nanotube (B-CNT, and Silicon doped carbon nanotube (Si-CNT are investigated by using density functional theory (DFT computations to exploit their potential applications as gas sensors. For the first time, we calculated the optimal equilibrium position, absorption energy (Ead, and density of states (DOS of the considered gas molecules adsorbed on the open end of zigzag single-walled (10, 0 B-CNT and Si-CNT. Our first principle calculations demonstrate that the B-CNT and Si-CNT adsorbent materials are able to adsorb the considered gas molecules with variety of adsorption energy and their electronic structure dramatic changes in the density of states near the Fermi level. The obtained comparative DFT studies results are useful for designing a high-fidelity gas sensor materials and selective adsorbents for a selective gas sensor.

  19. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  20. Electroless oxidation of diamond surfaces in ceric and ferricyanide solutions: An easy way to produce 'C-O' functional groups

    Energy Technology Data Exchange (ETDEWEB)

    Simon, N., E-mail: nathalie.simon@uvsq.f [Institut Lavoisier de Versailles, UMR 8180, Universite de Versailles-St-Quentin en Yvelines, 45 avenue des Etats Unis, 78000 Versailles (France); Charrier, G.; Etcheberry, A. [Institut Lavoisier de Versailles, UMR 8180, Universite de Versailles-St-Quentin en Yvelines, 45 avenue des Etats Unis, 78000 Versailles (France)

    2010-08-01

    Despite many works are devoted to oxidation of diamond surfaces, it is still a challenge, to successfully produce well defined 'C-O' functions, particularly for functionalization purposes. In this paper we describe and compare, for the first time, the 'electroless' oxidation of as-deposited polycrystalline boron-doped diamond (BDD) films in ceric and ferricyanide solutions at room temperature. Both reactions efficiently generate oxygen functionalities on BDD surface. While a higher amount of 'C-O' moieties is produced with Ce{sup 4+} as oxidizing agent, the use of ferricyanide specie seems the most interesting to specifically generate hydroxyl groups. Additionally, this easy to perform oxidative method appears not damaging for diamond surfaces and adapted to conductive or non-conductive materials. The resulting surfaces were characterized using X-ray photoelectron spectroscopy, contact angle and capacitance-voltage analysis.

  1. From Quasi-Planar B56 to Penta-Ring Tubular Ca©B56: Prediction of Metal-Stabilized Ca©B56 as the Embryo of Metal-Doped Boron α-Nanotubes

    Science.gov (United States)

    Tian, Wen-Juan; Chen, Qiang; Tian, Xin-Xin; Mu, Yue-Wen; Lu, Hai-Gang; Li, Si-Dian

    2016-11-01

    Motifs of planar metalloborophenes, cage-like metalloborospherenes, and metal-centered double-ring tubular boron species have been reported. Based on extensive first-principles theory calculations, we present herein the possibility of doping the quasi-planar C2v B56 (A-1) with an alkaline-earth metal to produce the penta-ring tubular Ca©B56 (B-1) which is the most stable isomer of the system obtained and can be viewed as the embryo of metal-doped (4,0) boron α-nanotube Ca©BNT(4,0) (C-1). Ca©BNT(4,0) (C-1) can be constructed by rolling up the most stable boron α-sheet and is predicted to be metallic in nature. Detailed bonding analyses show that the highly stable planar C2v B56 (A-1) is the boron analog of circumbiphenyl (C38H16) in π-bonding, while the 3D aromatic C4v Ca©B56 (B-1) possesses a perfect delocalized π system over the σ-skeleton on the tube surface. The IR and Raman spectra of C4v Ca©B56 (B-1) and photoelectron spectrum of its monoanion C4v Ca©B56‑ are computationally simulated to facilitate their spectroscopic characterizations.

  2. Ab initio investigation of Al- and Ga-doped single-walled boron nitride nanotubes as ammonia sensor

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: Alireza.soltani46@yahoo.com [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Raz, Shima Ghafouri [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Rezaei, Vahid Joveini [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Dehno Khalaji, Aliakbar [Department of Chemistry, Faculty of Science, Golestan University, Gorgan (Iran, Islamic Republic of); Savar, Mohammad [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer The electronic properties of NH{sub 3} on Al- and Ga-doped (8, 0) and (5, 5) BNNT are studied. Black-Right-Pointing-Pointer The adsorption energy for NH{sub 3} on Al-doped (8, 0) BNNT is higher than that of Ga-doped (8, 0) BNNT. Black-Right-Pointing-Pointer The relation between adsorption energy and charge transfer was investigated. - Abstract: We performed first-principles calculations on the ammonia (NH{sub 3}) adsorption properties with zigzag and armchair single-walled BN nanotubes (SWBNNTs) using B3LYP/6-31G* basis set implemented in Gaussian 98 program. We considered the ammonia adsorption on structural and electronic properties of Al- and Ga-doped (8, 0), (5, 5) BNNTs. The adsorption energy for the most stable configuration of NH{sub 3} on Al-doped (8, 0) BNNT is about -0.182 eV, which is typical for the chemisorptions. We determined that both aluminum and gallium doping can significantly enhance the adsorption energy of NH{sub 3}/BNNTs complexes. Our electronic results reveal that there is a significant orbital hybridization between two species in adsorption process being an evidence of covalent interaction.

  3. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

    Science.gov (United States)

    Suplinskas, Raymond J.; Finnemore, Douglas; Bud'ko, Serquei; Canfield, Paul

    2007-11-13

    A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

  4. Diamond Nanowires: A Novel Platform for Electrochemistry and Matrix-Free Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Sabine Szunerits

    2015-05-01

    Full Text Available Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs, and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed.

  5. Optically transparent, scratch-resistant, diamond-like carbon coatings

    Science.gov (United States)

    He, Xiao-Ming; Lee, Deok-Hyung; Nastasi, Michael A.; Walter, Kevin C.; Tuszewski, Michel G.

    2003-06-03

    A plasma-based method for the deposition of diamond-like carbon (DLC) coatings is described. The process uses a radio-frequency inductively coupled discharge to generate a plasma at relatively low gas pressures. The deposition process is environmentally friendly and scaleable to large areas, and components that have geometrically complicated surfaces can be processed. The method has been used to deposit adherent 100-400 nm thick DLC coatings on metals, glass, and polymers. These coatings are between three and four times harder than steel and are therefore scratch resistant, and transparent to visible light. Boron and silicon doping of the DLC coatings have produced coatings having improved optical properties and lower coating stress levels, but with slightly lower hardness.

  6. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

    Science.gov (United States)

    Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Lee, Hyun Woo; Han, Sun Woong; Baik, Hong Koo

    2013-08-28

    We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

  7. Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Westra, J.M.; Swaaij, R.A.C.M.M. van [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands); Šutta, P. [New Technologies-Research Centre, University of West Bohemia, Plzen (Czech Republic); Sharma, K.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Zeman, M. [Photovoltaic Materials and Devices, Department of Sustainable Electrical Energy, Delft University of Technology, Delft (Netherlands)

    2014-10-01

    Thin-film polycrystalline silicon on glass obtained by crystallization of hydrogenated amorphous silicon (a-Si:H) films is an interesting alternative for thin-film silicon solar cells. Although the solar-cell efficiencies are still limited, this technique offers excellent opportunity to study the influence of B-doping on the crystallisation process of a-Si:H. Our approach is to slowly crystallize B-doped a-Si:H films by solid phase crystallization in the temperature range 580–600°C. We use plasma-enhanced chemical vapour deposition (PECVD) and expanding thermal plasma chemical vapour deposition (ETPCVD) for the B-doped a-Si:H deposition. In this work we show the first in-situ study of the crystallization process of B-doped a-Si:H films produced by ETPCVD and make a comparison to the crystallization of intrinsic ETPCVD deposited a-Si:H as well as intrinsic and B-doped a-Si:H films deposited by PECVD. The crystallization process is investigated by in-situ x-ray diffraction, using a high temperature chamber for the annealing procedure. The study shows a strong decrease in the time required for full crystallisation for B-doped a-Si:H films compared to the intrinsic films. The time before the onset of crystallisation is reduced by the incorporation of B as is the grain growth velocity. The time to full crystallisation can be manipulated by the B{sub 2}H{sub 6}-to-SiH{sub 4} ratio used during the deposition and by the microstructure of the as-deposited a-Si:H films. - Highlights: • Solid-phase crystallization of B-doped a-Si:H films is presented. • Crystallization study of B-doped and intrinsic a-Si:H by in-situ x-ray diffraction • The microstructure and B-doping of a-Si:H influences the crystallisation process. • B enhances the grain growth rate, but the effect on the nucleation rate is limited.

  8. Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Duchamp, M.; Boothroyd, C.B.; Dunin-Borkowski, R.E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Gruenberg Institute (PGI), Forschungszentrum Juelich, D-52425 Juelich (Germany); Moreno, M.S. [Centro Atomico Bariloche, 8400 - S. C. de Bariloche (Argentina); Van Aken, B.B.; Soppe, W.J. [ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven (Netherlands)

    2013-03-07

    Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ?200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.

  9. Highly conducting and preferred oriented boron doped nc-Si films for window layers in nc-Si solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2016-05-01

    Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B2H6) as the dopant gas. High magnitudeof electrical conductivity (~102 S cm-1) andorientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc-Si solar cells.

  10. On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

    Science.gov (United States)

    Zangenberg, N. R.; Nylandsted Larsen, A.

    2005-02-01

    Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (Epa, σpa) = (0.18 eV, 6.5×10-15 cm2) only present at cryogenic temperatures is studied. Furthermore, the bi-stable boron-vacancy complex is studied and it’s configuration at low temperatures is investigated and found to have the signature (Epa, σpa) = (0.11 eV, 8.2×10-15 cm2).

  11. The effect of boron doping on crystal structure, magnetic properties and magnetocaloric effect of DyCo2

    Science.gov (United States)

    Wang, C. L.; Liu, J.; Mudryk, Y.; Gschneidner, K. A.; Long, Y.; Pecharsky, V. K.

    2016-05-01

    The magnetic properties and magnetic entropy changes of DyCo2Bx (x=0, 0.05, 0.1, and 0.2) alloys were investigated. The Curie temperature (TC) increases with increasing B concentration. The frequency dependence of ac magnetic susceptibility of DyCo2 caused by the narrow domain wall pinning effect is depressed by B doping, but the coercivity and the magnetic viscosity are prominently increased in the B doped alloys. The magnetic transition nature of DyCo2Bx changes from the first-order to the second-order with increasing x, which leads to the decrease of the maximum magnetic entropy change. However, the relative cooling power (RCP) of DyCo2 and the B doped alloys remains nearly constant.

  12. Dynamic optical properties of amorphous diamond-like carbon nanocomposite films doped with Cu and Ag nanoparticles

    Science.gov (United States)

    Tamulevičius, Tomas; Peckus, Domantas; Tamulevičiene, Asta; Vasiliauskas, Andrius; Čiegis, Arvydas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-09-01

    The investigation of relaxation processes in noble metal nanoparticles upon ultrafast excitations by femtosecond laser pulses is useful to understand the origin and the enhancement mechanism of the nonlinear optical properties for metaldielectric nanocomposites. In the current work we analyze diamond like carbon (DLC) film based copper and silver nanocomposites with different metal content synthesized employing unbalanced magnetron sputtering of metal targets with argon ions in acetylene gas atmosphere. Surface morphology and nanoparticle sizes were analyzed employing scanning electron and atomic force microscopy. Optical properties of the nanocomposite films were analyzed employing UV-VIS-NIR spectrometry. Transient absorption measurements were obtained employing Yb:KGW femtosecond laser spectroscopic system (HARPIA, Light Conversion Ltd.). Energy relaxation dynamics in Cu nanoparticles showed some significant differences from Ag nanoparticles. The increase of excitation intensity hasn't show additional nonlinear effects for the excited state relaxation dynamics for both kinds of samples.

  13. Industrial diamond

    Science.gov (United States)

    Olson, D.W.

    2013-01-01

    Estimated 2012 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2012, natural industrial diamonds were produced in at least 20 countries, and synthetic industrial diamond was produced in at least 12 countries. About 99 percent of the combined natural and synthetic global output was produced in Belarus, China, Ireland, Japan, Russia, South Africa and the United States. During 2012, China was the world’s leading producer of synthetic industrial diamond followed by the United States and Russia. In 2012, the two U.S. synthetic producers, one in Pennsylvania and the other in Ohio, had an estimated output of 103 million carats, valued at about $70.6 million. This was an estimated 43.7 million carats of synthetic diamond bort, grit, and dust and powder with a value of $14.5 million combined with an estimated 59.7 million carats of synthetic diamond stone with a value of $56.1 million. Also in 2012, nine U.S. firms manufactured polycrystalline diamond (PCD) from synthetic diamond grit and powder. The United States government does not collect or maintain data for either domestic PCD producers or domestic chemical vapor deposition (CVD) diamond producers for quantity or value of annual production. Current trade and consumption quantity data are not available for PCD or for CVD diamond. For these reasons, PCD and CVD diamond are not included in the industrial diamond quantitative data reported here.

  14. Ultrananocrystalline diamond contacts for electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Smedley, John; Muller, Erik

    2016-11-01

    A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

  15. The effect of boron doping on the magnetostriction of Fe-Ga and Fe-Al samples

    Energy Technology Data Exchange (ETDEWEB)

    Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [TU Dresden, Institut fuer Festkoerperphysik (Germany); Teodoro dos Santos, Claudio; Bormio-Nunes, Cristina [Universidade de Sao Paulo, Escola de Engenharia de Lorena, Lorena (Brazil)

    2011-07-01

    Fe-Ga (Galfenol) based alloys are used in a number of magnetomechanical applications because of the high magnetostriction values of more than 100 ppm at room temperature. The addition of boron inhibits the crystallographic ordering of the alloys and stabilizes the disordered A2 structure that is responsible for the high striction values. Especially, polycrystalline and rapid cooled Fe-Ga-B and Fe-Al-B samples were investigated in our project. Magnetization and longitudinal as well as transversal magnetostriction measurements at temperatures of 5 K, 80 K and 300 K show a similar effect of the amount of B as found on single crystals. Whereas the saturation magnetization is nearly the same and mainly determined by the Fe content, a dependence of the striction values on the amount of B is visible (more than 10% in the Fe-Al system). The results illustrate the influence of the stoichiometry and the preparation conditions on the magnetomechanical properties.

  16. On the development of a dual-layered diamond-coated tool for the effective machining of titanium Ti-6Al-4V alloy

    Science.gov (United States)

    Srinivasan, Balaji; Ramachandra Rao, M. S.; Rao, Balkrishna C.

    2017-01-01

    This work is focused on the development of a dual-layered diamond-coated tungsten carbide tool for machining titanium Ti-6Al-4V alloy. A hot-filament chemical vapor deposition technique was used to synthesize diamond films on tungsten carbide tools. A boron-doped diamond interlayer was added to a microcrystalline diamond layer in an attempt to improve the interface adhesion strength. The dual-layered diamond-coated tool was employed in machining at cutting speeds in the range of 70 to 150 m min-1 with a lower feed and a lower depth of cut of 0.5 mm rev-1 and 0.5 mm, respectively, to operate in the transition from adhesion- to diffusion-tool-wear and thereby arrive at suitable conditions for enhancing tool life. The proposed tool was then compared, on the basis of performance under real-time cutting conditions, with commercially available microcrystalline diamond, nanocrystalline diamond, titanium nitride and uncoated tungsten carbide tools. The life and surface finish of the proposed dual-layered tool and uncoated tungsten carbide were also investigated in interrupted cutting such as milling. The results of this study show a significant improvement in tool life and finish of Ti-6Al-4V parts machined with the dual-layered diamond-coated tool when compared with its uncoated counterpart. These results pave the way for the use of a low-cost tool, with respect to, polycrystalline diamond for enhancing both tool life and machining productivity in critical sectors fabricating parts out of titanium Ti-6Al-4V alloy. The application of this coating technology can also be extended to the machining of non-ferrous alloys owing to its better adhesion strength.

  17. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    Energy Technology Data Exchange (ETDEWEB)

    Venta, J. de la, E-mail: jdelaventa@physics.ucsd.edu [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Basaran, Ali C. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Materials Science and Engineering, University of California, La Jolla, San Diego, CA 92093 (United States); Grant, T. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Gallardo-Amores, J.M. [Departamento de Quimica Inorganica I, Universidad Complutense, E-28040 Madrid (Spain); Ramirez, J.G. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States); Alario-Franco, M.A. [Departamento de Quimica Inorganica I, Universidad Complutense, E-28040 Madrid (Spain); Fisk, Z. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Schuller, Ivan K. [Department of Physics and Center for Advanced Nanoscience, University of California, La Jolla, San Diego, CA 92093 (United States)

    2013-08-15

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr{sub 3}Si{sub 2} phase. - Highlights: • Study of the Pr–Si system using HP–HT or doping with C and B. • New magnetic phases in the Pr–Si system doped with C. • Confirmation of the existence of the Pr{sub 3}Si{sub 2} phase.

  18. Microwave activation of electrochemical processes: High temperature phenol and triclosan electro-oxidation at carbon and diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ghanem, Mohamed A.; Marken, Frank [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Compton, Richard G.; Coles, Barry A. [Physical and Theoretical Chemistry Laboratory, Oxford University, Oxford OX1 3QZ (United Kingdom); Psillakis, Elefteria [Laboratory of Aquatic Chemistry, Department of Environmental Engineering, Technical University of Crete, Polytechnioupolis, 73100 Chania-Crete (Greece); Kulandainathan, M. Anbu [Central Electrochemical Research Institute, Karaikudi (India)

    2007-12-20

    The electrochemical oxidation of phenolic compounds in aqueous media is known to be affected by the formation of electro-polymerized organic layers which lead to partial or complete electrode blocking. In this study the effect of high intensity microwave radiation applied locally at the electrode surface is investigated for the oxidation of phenol and triclosan in alkaline solution at a 500 {mu}m diameter glassy carbon or at a 500 {mu}m x 500 {mu}m boron-doped diamond electrode. The temperature at the electrode surface and mass transport enhancement are determined by calibration with the Fe(CN){sub 6}{sup 3-/4-} redox system in aqueous 0.3 M NaOH and 0.2 NaCl (pH 12) solution. The calibration shows that strong thermal and mass transport effects occur at both glassy carbon and boron-doped diamond electrodes. The average electrode temperature reaches up to 390 K and mass transport enhancements of more than 20-fold are possible. For the phenol electro-oxidation at glassy carbon electrodes and at a concentration below 2 mM a multi-electron oxidation (ca. 4 electrons) occurs in the presence of microwave radiation. For the electro-oxidation of the more hydrophobic triclosan only the one-electron oxidation occurs. Although currents are enhanced in presence of microwave radiation, rapid blocking of the electrode surface in particular at high phenol concentrations still occurs. (author)

  19. The formation and activity of platinum adlayers on diamond electrodes for electrocatalysis

    Science.gov (United States)

    Bennett, Jason Alan

    The research described in this dissertation evaluates the potential of diamond as an advanced carbon electrocatalyst support material. This includes both assessing the physical and electrochemical properties of the material as well as a comprehensive investigation into the nature of metal adlayer formation on the material. The physical and electrochemical properties of boron-doped polycrystalline diamond thin films, prepared with varying levels of sp2-bonded nondiamond carbon impurity, were systematically investigated. This impurity was introduced through adjustment of the methane-to-hydrogen source gas ratio used for the deposition. Increasing the methane-to-hydrogen ratio resulted in an increase in the fraction of grain boundary, the extent of secondary nucleation, and the amount of sp2-bonded nondiamond carbon impurity. The effect of the source gas ratio on the electrochemical response towards several well known redox analytes and the oxygen reduction reaction in both acidic and alkaline media was also investigated. The results demonstrate that the grain boundaries, and the sp2-bonded nondiamond carbon impurity presumably residing there, can have a significant impact on the electrode reaction kinetics for certain redox systems and little influence for others. The morphological and microstructural stability of microcrystalline and nanocrystalline boron-doped diamond thin film electrodes under conditions observed in phosphoric acid fuel cells was investigated. The electrodes were exposed to a 2 h period of anodic polarization in 85% H3PO 4 at ˜180°C and 0.1 A/cm2. Catastrophic degradation was not observed for either type of diamond. The oxidation of the microcrystalline diamond was limited to the surface, and the effects could be reversed upon exposure to a hydrogen plasma. The nanocrystalline diamond exhibited similar responses to well known redox analytes after anodic polarization, however an irreversible increase in the film capacitance was also observed

  20. Boronic acid functionalized N-doped carbon quantum dots as fluorescent probe for selective and sensitive glucose determination

    Science.gov (United States)

    Jiang, Guohua; Jiang, Tengteng; Li, Xia; Wei, Zheng; Du, Xiangxiang; Wang, Xiaohong

    2014-04-01

    Nitrogen doped carbon quantum dots (NCQDs) of about 10 nm in diameter have been obtained by hydrothermal reaction from collagen. Because of the superiority of water dispersion, low toxicity and ease of functionlization, the NCQDs were designed as a glucose sensor after covalent grafting by 3-aminophenylboronic (APBA) (APBA-NCQDs). The as-prepared APBA-NCQDs were imparted with glucose sensitivity and selectivity from other saccharides via fluorescence (FL) quenching effect at physiological pH and at room temperature, which show high sensitivity and specificity for glucose determination with a wide range from 1 mM to 14 mM. FL quenching mechanism of APBA-NCQDs was also investigated by adding an external quencher. The APBA-NCQDs-based platform is an environmentally friendly way to substitute inorganic quantum dots containing heavy metals which offer a facile and low cost detection method.

  1. Boron-nitrogen doped carbon scaffolding: organic chemistry, self-assembly and materials applications of borazine and its derivatives.

    Science.gov (United States)

    Bonifazi, Davide; Fasano, Francesco; Lorenzo-Garcia, M Mercedes; Marinelli, Davide; Oubaha, Hamid; Tasseroul, Jonathan

    2015-10-25

    Discovered by Stock and Pohland in 1926, borazine is the isoelectronic and isostructural inorganic analogue of benzene, where the C[double bond, length as m-dash]C bonds are substituted by B-N bonds. The strong polarity of such heteroatomic bonds widens the HOMO-LUMO gap of the molecule, imparting strong UV-emitting/absorption and electrical insulating properties. These properties make borazine and its derivatives valuable molecular scaffolds to be inserted as doping units in graphitic-based carbon materials to tailor their optoelectronic characteristics, and specifically their semiconducting properties. By guiding the reader through the most significant examples in the field, in this feature paper we describe the past and recent developments in the organic synthesis and functionalisation of borazine and its derivatives. These boosted the production of a large variety of tailored derivatives, broadening their use in optoelectronics, H2 storage and supramolecular functional architectures, to name a few.

  2. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    Directory of Open Access Journals (Sweden)

    David J. Rowe

    2014-02-01

    Full Text Available Alloyed silicon-germanium (SiGe nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1−xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  3. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    Energy Technology Data Exchange (ETDEWEB)

    de la Venta, J.; Basaran, Ali