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Sample records for boron arsenides

  1. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    Science.gov (United States)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  2. High Pressure X-ray Diffraction Study on Icosahedral Boron Arsenide (B12As2)

    Energy Technology Data Exchange (ETDEWEB)

    J Wu; H Zhu; D Hou; C Ji; C Whiteley; J Edgar; Y Ma

    2011-12-31

    The high pressure properties of icosahedral boron arsenide (B12As2) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B12As2 retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B12As2-c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.

  3. Seeded growth of boron arsenide single crystals with high thermal conductivity

    Science.gov (United States)

    Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

    2018-01-01

    Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

  4. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    Science.gov (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  5. Cluster-Bethe-lattice treatment of the interstitial boron centre in irradiated gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kleinert, P. (Akademie der Wissenschaften der DDR, Berlin. Zentralinstitut fuer Elektronenphysik)

    1984-08-01

    The radiation-induced interstitial defect B(1) in GaAs is theoretically analysed by a cluster-Bethe lattice treatment. Theoretical results obtained for a B-Ga dumbbell in gallium arsenide agree quite well with experimental data. The dumbbell coupling is about three times stiffer than the bonds between host-lattice atoms. The separation of the dumbbell atoms amounts to one lattice constant. Due to the isotopy of gallium atoms all B(1) bands should exhibit a double-peak structure with a small frequency split of about 1, 0.1, and 0.4 cm/sup -1/ for the A/sub 1/, B/sub 1/, and B/sub 2/ modes, respectively. A resolution of these splittings would supply additional evidence for the B(1) defect model discussed here.

  6. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.

    Science.gov (United States)

    Tanaka, Akiyo

    2004-08-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials.

  7. Gallium Arsenide Domino Circuit

    Science.gov (United States)

    Yang, Long; Long, Stephen I.

    1990-01-01

    Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

  8. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    ARL-TR-7819 ● SEP 2016 US Army Research Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs...Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication by...Report 3. DATES COVERED (From - To) January 2016–September 2016 4. TITLE AND SUBTITLE Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs

  9. Boron nitride - Composition, optical properties, and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  10. Boron nitride: Composition, optical properties and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  11. Large grain gallium arsenide thin films

    Science.gov (United States)

    Chu, S. S.; Chu, T. L.; Firouzi, H.; Han, Y. X.; Chen, W. J.; Wang, Q. H.

    Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 microns or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. MOS solar cells of 9 sq cm area with an AM1 efficiency of 8.5 percent and p(+)/n/n(+) homojunction solar cells of 1 sq cm area with an AM1 efficiency of 8.8 percent have been prepared. However, in order to further improve the conversion efficiency before the development of effective passivation techniques, gallium arsenide films with large and uniform grain structure are necessary. The large grain gallium arsenide films have been prepared by using (1) the arsine treatment of a thin layer of molten gallium on the substrate surface and (2) the recrystallized germanium films on tungsten/graphite as substrates.

  12. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  13. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  14. Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide/Aluminum Gallium Arsenide Solar Cells

    Science.gov (United States)

    2015-07-01

    Aluminum Gallium Arsenide Solar Cells by Kimberley A Olver Approved for public release; distribution unlimited...Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide / Aluminum Gallium Arsenide Solar Cells by Kimberley A Olver... Aluminum Gallium Arsenide (AlGaAs) Solar Cells 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Kimberley A Olver

  15. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  16. Graphene on gallium arsenide: Engineering the visibility

    OpenAIRE

    Friedemann, M.; Pierz, K.; Stosch, R.; Ahlers, F. J.

    2009-01-01

    Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs/AlAs (aluminum arsenide) multi-layer structure makes graphene just as visible on GaAs as o...

  17. Radiation damage of gallium arsenide production cells

    Science.gov (United States)

    Mardesich, N.; Joslin, D.; Garlick, J.; Lillington, D.; Gillanders, M.; Cavicchi, B.; Scott-Monck, J.; Kachare, R.; Anspaugh, B.

    1987-01-01

    High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

  18. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-12-12

    This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxide and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.

  19. Design and fabrication of a gallium arsenide composite operational amplifier

    OpenAIRE

    Carson, David B.

    1995-01-01

    Silicon (Si) processes remain the dominant technology in integrated circuit (IC) design, but gallium arsenide (GaAs) is gaining ground. Gallium arsenide's electron mobility is five times greater than Si, so GaGs circuits are faster and have a greater rang U.S. Navy (U.S.N.) author.

  20. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    Science.gov (United States)

    2015-02-09

    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich...SUBTITLE 5a. CONTRACT NUMBER FA9453-13-1-0232 Superlattice Intermediate Band Solar Cell on Gallium Arsenide 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER

  1. Development of gallium arsenide solar cells

    Science.gov (United States)

    1973-01-01

    The potential of ion implantation as a means to the development of high efficiency gallium arsenide solar cells is investigated. Summaries are included of the results of computer calculations of GaAs cell characteristics, based on a model which includes the effects of surface recombination, junction space-charge region recombination, and built-in fields produced by nonuniform doping in the region; of the fabrication technology developed under the program; and of the results of electrical and optical measurements on the samples produced during the program. It was determined that measured AMO efficiencies were more than a factor of two lower than the calculated values.

  2. Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

    Science.gov (United States)

    2015-09-01

    GaAs)/ Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures by Patrick A Folkes, Blair Connelly, Harry Hier, William Beck, and Brenda Van...Lifetime in Gallium Arsenide (GaAs)/ Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures by Patrick A Folkes, Blair Connelly, Harry Hier...3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/ Aluminum

  3. Modelling of the modulation properties of arsenide and nitride VCSELs

    Science.gov (United States)

    Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

    2017-02-01

    In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

  4. Combined isovalent alloying gallium arsenide with bismuth and indium

    International Nuclear Information System (INIS)

    Vorob'eva, V.V.; Zushinskaya, O.V.; Novikov, S.V.; Savel'ev, I.G.; Chaldyshev, V.V.

    1989-01-01

    Electric conductivity and the Hall effect at 77 and 300K of gallium arsenide epitaxial films grown from the melted solution with bismuth and indium additions at 77 and 300K. Different mechanisms of bismuth and indium effect on the ensamble of defects and background addition in gallium arsenide, are established. Bismuth effect is conditioned by the change of liquid phase properties, and indium effect is conditioned by the processes taking place in a crystal. The experimental results have shown that the mutual alloying of gallium arsenide with indium and bismuth in the process of liquid-phase epitaxy ensures high electrophysical film properties

  5. Computer simulation of radiation damage in gallium arsenide

    Science.gov (United States)

    Stith, John J.; Davenport, James C.; Copeland, Randolph L.

    1989-01-01

    A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

  6. Optical Parametric Oscillation in Orientation-Patterned Gallium Arsenide

    National Research Council Canada - National Science Library

    Shell, Scott A

    2007-01-01

    .... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

  7. Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

    National Research Council Canada - National Science Library

    Meyer, Joshua W

    2006-01-01

    .... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

  8. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  9. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  10. Method of fabricating germanium and gallium arsenide devices

    Science.gov (United States)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  11. Contact formation in gallium arsenide solar cells

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  12. Gallium Arsenide solar cell radiation damage experiment

    Science.gov (United States)

    Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

    1991-01-01

    Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

  13. Surface magnetism of gallium arsenide nanofilms

    Science.gov (United States)

    Lu, Huan; Yu, Jin; Guo, Wanlin

    2017-11-01

    Gallium arsenide (GaAs) is the most widely used second-generation semiconductor with a direct band gap, and it is being increasingly used as nanofilms. However, the magnetic properties of GaAs nanofilms have never been studied. Here we find by comprehensive density-functional-theory calculations that GaAs nanofilms cleaved along the 〈111 〉 and 〈100 〉 directions become intrinsically metallic films with strong surface magnetism and the magnetoelectric effect. Surface magnetism and electrical conductivity are realized via a combined effect of charge transfer induced by spontaneous electric polarization through the film thickness and spin-polarized surface states. The surface magnetism of 〈111 〉 nanofilms can be significantly and linearly tuned by a vertically applied electric field, endowing the nanofilms with unexpectedly high magnetoelectric coefficients, which are tens of times higher than those of ferromagnetic metals and transition-metal oxides.

  14. The interaction of gold with gallium arsenide

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

  15. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  16. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    Science.gov (United States)

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  17. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  18. Thermal stability of gallium arsenide solar cells

    Science.gov (United States)

    Papež, Nikola; Škvarenina, Ľubomír.; Tofel, Pavel; Sobola, Dinara

    2017-12-01

    This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30-650 °C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 °C thermal processing, its current-voltage characteristic remained without a significant change.

  19. Evaluation of the carcinogenicity of gallium arsenide.

    Science.gov (United States)

    Bomhard, Ernst M; Gelbke, Heinz-Peter; Schenk, Hermann; Williams, Gary M; Cohen, Samuel M

    2013-05-01

    Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings. IARC classified GaAs as carcinogenic to humans (group 1) based on the assumption that As and Ga ions are bioavailable. The European Chemical Agency Risk Assessment Committee concluded that GaAs should be classified into Carcinogenicity Category 1B (presumed to have carcinogenic potential for humans; ECHA). We evaluate whether these classifications are justified. Physico-chemical properties of GaAs particles and the degree of mechanical treatment are critical in this evaluation. The available data on mode of action (MOA), genotoxicity and bioavailability do not support the contribution of As or Ga ions to the lung tumors in female rats. Most toxicological studies utilized small particles produced by strong mechanical treatment, destroying the crystalline structure. The resulting amorphous GaAs is not relevant to crystalline GaAs at production and processing sites. The likely tumorigenic MOA is lung toxicity related to particulate-induced inflammation and increased proliferation. It is concluded that there is no evidence for a primary carcinogenic effect of GaAs.

  20. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  1. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

    2007-01-01

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  2. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  3. Gallium arsenide processing for gate array logic

    Science.gov (United States)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  4. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  5. Electrooptic Waveguide Directional Coupler Modulator in Aluminum Gallium Arsenide-Gallium Arsenide.

    Science.gov (United States)

    Khan, Mujibun Nisa

    A novel optical waveguide intensity modulator in aluminum gallium arsenide and gallium arsenide material system is modeled, designed, and experimentally demonstrated at 0.83 μm wavelength. The modulator utilizes the linear electrooptic effect in a coupled waveguide structure to achieve high extinction ratio at low drive voltage. The device structure consists of a differentially -etched ridge directional coupler, where the ridge height in the gap is smaller that that of the outer sides. The effective index and semivectorial finite difference modeling techniques are developed to analyze the single ridge guides and directional coupler structures. The mode structure results from the two models are compared and the limitations of the effective index method are determined. The differential -etch design is employed to reduce the length as well as the drive voltage of the modulator. A modulation voltage of 2 volts for a 3.5-mm-long device is achieved, which is the lowest reported in literature. These results are compared with those obtained from the simplified analytical expressions for conventional couplers, and higher performance expected from the differential-etch design is verified. The modulator extinction ratio is measured to be 13 dB at 2 volts. The measured optical propagation loss of approximately 3.4 dB/cm for the modulator is speculated to be primarily due to the surface morphology of the epitaxially-grown material, and the light scattering from rough ridge walls produced during the anisotropic dry etching process. The high microwave loss of 15 dB/cm calculated for the modulator electrode design suggests a trade-off between the modulation voltage and the bandwidth, which is expected to be limited to 500 MHz. The measurement of the modulator frequency response up to 100 KHz is presented, because of the test limitations at higher frequencies due to the weak modulated intensity signals.

  6. Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

    International Nuclear Information System (INIS)

    Bell, E.C.

    1979-10-01

    The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

  7. Thermal processes in gallium arsenide during nanosecond laser irradiation

    International Nuclear Information System (INIS)

    Ivlev, G.D.; Malevich, V.L.

    1990-01-01

    Phase changes in the surface layers of semiconductors during irradiation by nanosecond laser pulses have been the subject of large numbers of papers. The authors have performed numerical modeling and an experimental study of phase changes in the surface layers of single crystal gallium arsenide heated by single pulses of ruby laser light

  8. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  9. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  10. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

    Science.gov (United States)

    2014-09-01

    Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell by Naresh C Das ARL-TR-7054 September 2014...September 2014 Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell Naresh C Das Sensors and Electron...From - To) 01/02/2014–07/15/2014 4. TITLE AND SUBTITLE Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell 5a

  11. Running droplets of gallium from evaporation of gallium arsenide.

    Science.gov (United States)

    Tersoff, J; Jesson, D E; Tang, W X

    2009-04-10

    High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface. Using real-time in situ surface electron microscopy, we found that these droplets spontaneously run across the crystal surface. Running droplets have been seen in many systems, but they typically require special surface preparation or gradient forces. In contrast, we show that noncongruent evaporation automatically provides a driving force for running droplets. The motion is predicted and observed to slow and stop near a characteristic temperature, with the speed increasing both below and above this temperature. The same behavior is expected to occur during the evaporation of similar III-V semiconductors such as indium arsenide.

  12. Two-photon photovoltaic effect in gallium arsenide.

    Science.gov (United States)

    Ma, Jichi; Chiles, Jeff; Sharma, Yagya D; Krishna, Sanjay; Fathpour, Sasan

    2014-09-15

    The two-photon photovoltaic effect is demonstrated in gallium arsenide at 976 and 1550 nm wavelengths. A waveguide-photodiode biased in its fourth quadrant harvests electrical power from the optical energy lost to two-photon absorption. The experimental results are in good agreement with simulations based on nonlinear wave propagation in waveguides and the drift-diffusion model of carrier transport in semiconductors. Power efficiency of up to 8% is theoretically predicted in optimized devices.

  13. Assessment of arsenic exposures and controls in gallium arsenide production.

    Science.gov (United States)

    Sheehy, J W; Jones, J H

    1993-02-01

    The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

  14. Pulverization of boron element and proportions of boron carbide in boron

    International Nuclear Information System (INIS)

    Lang, F.M.; Finck, C.

    1956-01-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

  15. Gallium arsenide differentially affects processing of phagolysosomal targeted antigen by macrophages.

    Science.gov (United States)

    Lewis, T A; Hartmann, C B; McCoy, K L

    1998-03-01

    Gallium arsenide, a semiconductor utilized in the electronics industry, causes immunosuppression in animals. The chemical's effect on macrophages to process antigen for activating pigeon cytochrome-specific helper T cell hybridoma was investigated. Mice were administered 200 mg/kg gallium arsenide or vehicle intraperitoneally. Five-day exposure suppressed processing by splenic macrophages but augmented processing by thioglycollate-elicited and resident peritoneal macrophages. Cytochrome coupled to latex beads was targeted to phagolysosomes to examine processing in lysosomes. Cytochrome beads required phagocytosis for processing and were located in phagolysosomes. Gallium arsenide did not alter the phagocytic ability of macrophages. Peritoneal macrophages normally processed the targeted antigen, indicating that gallium arsenide influenced compartment(s) preceding lysosomes. However, the processing efficiency of exposed splenic macrophages depended on the size of particulate cytochrome, suggesting that processing varied in phagolysosomes of different sizes. Gallium arsenide impacted different intracellular compartments in these macrophages, perhaps contributing to systemic immunotoxicity and local inflammation caused by exposure.

  16. Laser and electron beam processing of silicon and gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, J.

    1979-10-01

    Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.

  17. Improved performance design of gallium arsenide solar cells for space

    Science.gov (United States)

    Parekh, R. H.; Barnett, A. M.

    1984-01-01

    An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

  18. Testing of gallium arsenide solar cells on the CRRES vehicle

    Science.gov (United States)

    Trumble, T. M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

  19. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

    1992-07-01

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  20. Anomalous tensoelectric effects in gallium arsenide tunnel diodes

    Energy Technology Data Exchange (ETDEWEB)

    Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

    1988-02-01

    Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

  1. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    Trumble, T.M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  2. Ca4As3 – a new binary calcium arsenide

    Science.gov (United States)

    Hoffmann, Andrea V.; Hlukhyy, Viktor; Fässler, Thomas F.

    2015-01-01

    The crystal structure of the binary compound tetra­calcium triarsenide, Ca4As3, was investigated by single-crystal X-ray diffraction. Ca4As3 crystallizes in the Ba4P3 structure type and is thus a homologue of isotypic Sr4As3. The unit cell contains 32 Ca2+ cations, 16 As3− isolated anions and four centrosymmetric [As2]4– dumbbells. The As atoms in each of the dumbbells are connected by a single bond, thus this calcium arsenide is a Zintl phase. PMID:26870427

  3. Ca4As3 – a new binary calcium arsenide

    Directory of Open Access Journals (Sweden)

    Andrea V. Hoffmann

    2015-12-01

    Full Text Available The crystal structure of the binary compound tetracalcium triarsenide, Ca4As3, was investigated by single-crystal X-ray diffraction. Ca4As3 crystallizes in the Ba4P3 structure type and is thus a homologue of isotypic Sr4As3. The unit cell contains 32 Ca2+ cations, 16 As3− isolated anions and four centrosymmetric [As2]4– dumbbells. The As atoms in each of the dumbbells are connected by a single bond, thus this calcium arsenide is a Zintl phase.

  4. Boronated liposome development and evaluation

    International Nuclear Information System (INIS)

    Hawthorne, M.F.

    1995-01-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

  5. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    mental phase contrast images and the diffraction pattern. Figure 3. (a) Bright field image of electrodeposited boron spec- imen showing a crystallite of size ∼10 × 5 nm; (b) phase contrast image of electrodeposited boron specimen showing a resolved la- ttice and (c) power spectrum of electrodeposited boron specimen.

  6. Enrichment of boron 10

    International Nuclear Information System (INIS)

    Coutinho, C.M.M.; Rodrigues Filho, J.S.R.; Umeda, K.; Echternacht, M.V.

    1990-01-01

    A isotopic separation pilot plant with five ion exchange columns interconnected in series were designed and built in the IEN. The columns are charged with a strong anionic resin in its alkaline form. The boric acid solution is introduced in the separation columns until it reaches a absorbing zone length which is sufficient to obtain the desired boron-10 isotopic concentration. The boric acid absorbing zone movement is provided by the injection of a diluted hydrochloric acid solution, which replace the boric acid throughout the columns. The absorbing zone equilibrium length is proportional to its total length. The enriched boron-10 and the depleted boron are located in the final boundary and in the initial position of the absorbing zones, respectively. (author)

  7. In Vivo Boron Uptake Determination for Boron Neutron Capture Synovectomy

    Energy Technology Data Exchange (ETDEWEB)

    Binello, Emanuela; Shortkroff, Sonya; Yanch, Jacquelyn C.

    1999-06-06

    Boron neutron capture synovectomy (BNCS) has been proposed as a new application of the boron neutron capture reaction for the treatment of rheumatoid arthritis. In BNCS, a boron compound is injected into the joint space, where it is taken up by the synovium. The joint is then irradiated with neutrons of a desired energy range, inducing the boron neutron capture reaction in boron-loaded cells. Boron uptake by the synovium is an important parameter in the assessment of the potential of BNCS and in the determination of whether to proceed to animal irradiations for the testing of therapeutic efficacy. We present results from an investigation of boron uptake in vivo by the synovium.

  8. Lattice parameters guide superconductivity in iron-arsenides

    International Nuclear Information System (INIS)

    Konzen, Lance M N; Sefat, Athena S

    2017-01-01

    The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a -lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c -lattice parameter changes with chemical substitution. For example, a decrease in c -lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS. (topical review)

  9. Point defects and electric compensation in gallium arsenide single crystals

    International Nuclear Information System (INIS)

    Kretzer, Ulrich

    2007-01-01

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated [de

  10. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  11. Evaluation of the male reproductive toxicity of gallium arsenide.

    Science.gov (United States)

    Bomhard, Ernst M; Cohen, Samuel M; Gelbke, Heinz-Peter; Williams, Gary M

    2012-10-01

    Gallium arsenide is an important semiconductor material marketed in the shape of wafers and thus is not hazardous to the end user. Exposure to GaAs particles may, however, occur during manufacture and processing. Potential hazards require evaluation. In 14-week inhalation studies with small GaAs particles, testicular effects have been reported in rats and mice. These effects occurred only in animals whose lungs showed marked inflammation and also had hematologic changes indicating anemia and hemolysis. The time- and concentration-dependent progressive nature of the lung and blood effects together with bioavailability data on gallium and arsenic lead us to conclude that the testicular/sperm effects are secondary to hypoxemia resulting from lung damage rather than due to a direct chemical effect of gallium or arsenide. Conditions leading to such primary effects are not expected to occur in humans at production and processing sites. This has to be taken into consideration for any classification decision for reproductive toxicity; especially a category 1 according to the EU CLP system is not warranted. Copyright © 2012 Elsevier Inc. All rights reserved.

  12. Process for microwave sintering boron carbide

    Science.gov (United States)

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  13. Bright prospects for boron

    NARCIS (Netherlands)

    Nanver, L.; Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  14. Effects of low-energy gallium-aluminum-arsenide laser irradiation on cultured fibroblasts and keratinocytes.

    Science.gov (United States)

    Pogrel, M A; Chen, J W; Zhang, K

    1997-01-01

    To assess whether the gallium-aluminum-arsenide low energy laser will increase cell proliferation, cell attachment, or cell migration in cultured fibroblasts and keratinocyte models. Monolayer cultures of fibroblasts and keratinocytes were subjected to gallium-aluminum-arsenide laser irradiation at varying power densities for varying time intervals. Cell proliferation was assessed by absorbent spectrophotometry while cell adhesion was assessed by a microcolorimetric assay for cells attached to bovine dermis collagen. Cell migration was assessed through a filter utilizing high power microscopic fields. There were no differences in cell proliferation, adhesion, or migration in either the fibroblasts or keratinocyte culture treated with the gallium-aluminum-arsenide laser at any power density or time compared with nontreated controls. The gallium-aluminum-arsenide laser, when utilized at powers 5-100 milliwatts and times of between 10-120 seconds has no biostimulatory effects on fibroblasts or keratinocyte cultures as assessed by cell proliferation, adhesion, or migration.

  15. Deposition and characterization of gallium arsenide films for solar cells applications

    Science.gov (United States)

    Chu, S. S.; Chu, T. L.; Lee, Y. T.

    1980-04-01

    Gallium arsenide films have been deposited on tungsten-coated graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow. It has been found that the presence of hydrogen chloride in the gallium monochloride-arsenic mixture is essential in obtaining large-area gallium arsenide films with sufficiently good microstructure suitable for photovoltaic devices. Schottky-barrier and MOS structures have been prepared from n-GaAs/n(+)-GaAs films on tungsten/graphite substrates, and their electrical properties investigated. Under AM1 conditions, MOS structures of area 9 sq cm have conversion efficiencies of up to 4.4 percent (without antireflection (AR) coating, would be about 6.7 percent with proper coating), and the conversion efficiencies can be increased to 5 percent (without AR coating, would be about 7.5 percent with proper coating) by using a thin gallium arsenide-phosphide film at the surface of gallium arsenide.

  16. Methods of producing continuous boron carbide fibers

    Science.gov (United States)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  17. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  18. Bit-systolic arithmetic arrays using dynamic differential gallium arsenide circuits

    Science.gov (United States)

    Beagles, Grant; Winters, Kel; Eldin, A. G.

    1992-01-01

    A new family of gallium arsenide circuits for fine grained bit-systolic arithmetic arrays is introduced. This scheme combines features of two recent techniques of dynamic gallium arsenide FET logic and differential dynamic single-clock CMOS logic. The resulting circuits are fast and compact, with tightly constrained series FET propagation paths, low fanout, no dc power dissipation, and depletion FET implementation without level shifting diodes.

  19. Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

    Directory of Open Access Journals (Sweden)

    Deming Ma

    2015-01-01

    Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

  20. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  1. Gallium arsenide/gold nanostructures deposited using plasma method

    Energy Technology Data Exchange (ETDEWEB)

    Mangla, O. [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Physics Department, Hindu College, University of Delhi, Delhi, 110007 (India); Roy, S. [Physics Department, Daulat Ram College, University of Delhi, Delhi, 110007, India. E-mail: savitaroy64@gmail.com (India); Annapoorni, S. [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India)

    2016-05-23

    The fabrication of gallium arsenide (GaAs) nanostructures on gold coated glass, quartz and silicon substrates using the high fluence and highly energetic ions has been reported. The high fluence and highly energetic ions are produced by the hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. The nanostructures having mean size about 14 nm, 13 nm and 18 nm are deposited on gold coated glass, quartz and silicon substrates, respectively. The optical properties of nanostructures studied using absorption spectra show surface plasmon resonance peak of gold nanoparticles. In addition, the band-gap of GaAs nanoparticles is more than that of bulk GaAs suggesting potential applications in the field of optoelectronic and sensor systems.

  2. Effect of gallium-arsenide laser, gallium-aluminum-arsenide laser and healing ointment on cutaneous wound healing in Wistar rats

    OpenAIRE

    Gonçalves,R.V.; Mezêncio,J.M.S.; Benevides,G.P.; Matta,S.L.P.; Neves,C.A.; Sarandy,M.M.; Vilela,E.F.

    2010-01-01

    This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs), gallium-arsenide laser (GaAs) and Dersani® healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals’ backs. The depth of the surgical incision was controlled by removing the epithelial tissue until the dorsal muscular fascia was exposed. The animals w...

  3. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; J. X. Zhong

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  4. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-09

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  5. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss...

  6. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies ...

  7. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  8. Boron Activated Neutron Thermometer

    Energy Technology Data Exchange (ETDEWEB)

    Lapsley, A. C. [Argonne National Lab. (ANL), Argonne, IL (United States). Instrument Research & Development

    1952-01-09

    The Brown Instrument Division of Minneapolis-Honeywell Regulator Co. have been making pilot models of boron coated neutron sensitive thermopiles, which show considerable promise of being effective indicators of slow neutron flux. Their loss in sensitivity in a year of operation in the maximum flux of CP-6 calculates to be less than 6 per cent. When used as rooftop indicators, the ratio of the signal of the two units would change by about 2 per cent in a year's time.

  9. Boron atom reactions

    International Nuclear Information System (INIS)

    Estes, R.; Tabacco, M.B.; Digiuseppe, T.G.; Davidovits, P.

    1982-01-01

    The reaction rates of atomic boron with various epoxides have been measured in a flow tube apparatus. The bimolecular rate constants, in units of cm 3 molecule -1 s -1 , are: 1,2-epoxypropane (8.6 x 10 -11 ), 1,2-epoxybutane (8.8 x 10 -11 ), 1,2,3,4-diepoxybutane (5.5 x 10 -11 ), 1-chloro-2,3-epoxypropane (5.7 x 10 -11 ), and 1,2-epoxy-3,3,3-trichloropropane (1.5 x 10 -11 ). (orig.)

  10. Synthesis of arsenic transition metal sulfides and metal arsenides

    Energy Technology Data Exchange (ETDEWEB)

    Singhal, G.H.; Brown, L.D.; Ryan, D.F. [Exxon Research & Development Labs, Baton Rouge, LA (United States)

    1993-12-31

    One of the chief problems in upgrading shale oil is the presence of inherent arsenic which is known to poison downstream catalysts. Highly dispersed transition metal sulfides formed in situ from the decomposition of dithiocarbamate (DTC) complexes of transition metals show excellent potential as dearsenation agents. The authors have studied the reaction of these sulfides with various arsenic compositions and characterized the metal arsenides and arsenic metal sulfides formed as well as the ease of their formation. Thus, the reaction of bis(butyldithiocarbamato)Ni, (NiBuDTC) with model compounds was very facile and gave NiAs, NiAsS, and NiAs2=xSx. In general the effectiveness of the sulfides for dearsenation followed the sequence Ni>Mo{much_gt}Co, while iron sulfides were totally ineffective. Based upon these results, tests were run in autoclaves (as well as a fixed-bed flow-through unit) with NiBuDTC and shale oil having 73 ppm inherent As. Under optimum conditions, dearsenation down to les than 1 ppm was obtained.

  11. Gallium arsenide (GaAs) quantum photonic waveguide circuits

    Science.gov (United States)

    Wang, Jianwei; Santamato, Alberto; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W.; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Höfling, Sven; Tanner, Michael G.; Natarajan, Chandra M.; Hadfield, Robert H.; Dorenbos, Sander N.; Zwiller, Val; O'Brien, Jeremy L.; Thompson, Mark G.

    2014-09-01

    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

  12. Speed gallium arsenide photoconductors; Photoconducteurs rapides en arseniure de gallium

    Energy Technology Data Exchange (ETDEWEB)

    Foulon, F.; Pochet, T. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Electronique et d`Instrumentation Nucleaire; Brullot, B. [CEA Centre d`Etudes de Bruyeres-le-Chatel, 91 (France)

    1993-12-31

    Gallium arsenide detectors are one of the most efficient gamma and X ray detectors at room temperature. Due to the high carrier mobility and short carrier lifetime, GaAs can be used for the detection of ultrafast gamma, X or laser pulses. GaAs photoconductors allow both pulse shape and intensity measurements. In this paper, we review the results of studies carried out jointly by the CEA/LETI/DEIN and CEA/DAM/CEM in France to improve the response of such detectors. The geometry of the photodetectors and their electrical contacts have been optimized for specific radiation measurements: low energy X rays (< 1 KeV), gamma rays or protons. It has been shown that a pre-irradiation treatment with fission neutrons at doses above 10{sup 14} n/cm{sup 2} induces a significant improvement of the response speed. This result from defect generation in the material and the subsequent carrier life time decrease. Detectors with sensitivities of about 10{sup -8} A/R.s for gamma rays and 10{sup -16} coulomb/proton, response times below 100 ps and good linearity over more than five decades are currently fabricated in our laboratory. (authors). 18 refs., 5 figs., 3 tabs.

  13. Impact of in vitro gallium arsenide exposure on macrophages

    International Nuclear Information System (INIS)

    Harrison, M.Travis; Hartmann, Constance B.; McCoy, Kathleen L.

    2003-01-01

    The semiconductor gallium arsenide (GaAs) is classified as an immunotoxicant and a carcinogen. We previously showed that GaAs in vivo induces several phenotypic changes in macrophages located at the exposure site, indicative of an activated state. These physiological alterations may be a primary or secondary consequence of chemical exposure. To discern primary influences, our current study examined the in vitro effects of the chemical on macrophage cell lines and murine peritoneal macrophages. GaAs augmented cathepsins L and B proteolytic activities in all three sources of macrophages. Expression of the two mature isoforms of invariant chain and its cleavage fragment was also significantly increased, indicating that the chemical directly affects macrophages. However, GaAs did not alter the overall cell surface expression of major histocompatibility complex class II molecules on macrophages nor influence their ability to stimulate antigen-specific helper T cell hybridomas to respond to intact antigens that require processing. These findings raise the possibility that the chemical's complete in vivo impact may involve cytokines. Further, GaAs in vitro enhanced steady-state cathepsin L protein, and cathepsins L and B mRNA expression in macrophages, indicating that GaAs may alter gene expression, which may contribute to the chemical's adverse biological effects

  14. Gallium arsenide deep-level optical emitter for fibre optics.

    Science.gov (United States)

    Pan, Janet L; McManis, Joseph E; Osadchy, Thomas; Grober, Louise; Woodall, Jerry M; Kindlmann, Peter J

    2003-06-01

    Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters.

  15. Deprotecting thioacetyl-terminated terphenyldithiol for assembly on gallium arsenide.

    Science.gov (United States)

    Krapchetov, Dmitry A; Ma, Hong; Jen, Alex K Y; Fischer, Daniel A; Loo, Yueh-Lin

    2008-02-05

    We characterize the assembly of terphenyldithiol (TPDT) on gallium arsenide (GaAs) from ethanol (EtOH) and tetrahydrofuran (THF) as a function of ammonium hydroxide (NH4OH) concentration. NH4OH facilitates the conversion of thioacetyl end groups of the TPDT precursor to thiolates in the assembly solution. The final structure of TPDT assembled on GaAs is sensitive not only to the assembly solvent but also to NH4OH concentration. In the presence of low concentrations of NH4OH (1 mM), TPDT assemblies from EtOH are oriented upright. The same assemblies are less upright when adsorption is carried out at higher NH4OH concentrations. In THF, TPDT does not adsorb significantly on GaAs at low NH4OH concentrations. The surface coverage and structural organization of these assemblies improve with increasing NH4OH concentrations, although these assemblies are never as organized as those from EtOH. The difference in the final structure of TPDT assemblies is attributed to differences in the thiolate fraction in the assembly solution at the point of substrate immersion.

  16. Impact of in vitro gallium arsenide exposure on macrophages.

    Science.gov (United States)

    Harrison, M Travis; Hartmann, Constance B; McCoy, Kathleen L

    2003-01-01

    The semiconductor gallium arsenide (GaAs) is classified as an immunotoxicant and a carcinogen. We previously showed that GaAs in vivo induces several phenotypic changes in macrophages located at the exposure site, indicative of an activated state. These physiological alterations may be a primary or secondary consequence of chemical exposure. To discern primary influences, our current study examined the in vitro effects of the chemical on macrophage cell lines and murine peritoneal macrophages. GaAs augmented cathepsins L and B proteolytic activities in all three sources of macrophages. Expression of the two mature isoforms of invariant chain and its cleavage fragment was also significantly increased, indicating that the chemical directly affects macrophages. However, GaAs did not alter the overall cell surface expression of major histocompatibility complex class II molecules on macrophages nor influence their ability to stimulate antigen-specific helper T cell hybridomas to respond to intact antigens that require processing. These findings raise the possibility that the chemical's complete in vivo impact may involve cytokines. Further, GaAs in vitro enhanced steady-state cathepsin L protein, and cathepsins L and B mRNA expression in macrophages, indicating that GaAs may alter gene expression, which may contribute to the chemical's adverse biological effects. Copyright 2003 Elsevier Science (USA)

  17. Enhanced photothermal conversion in vertically oriented gallium arsenide nanowire arrays.

    Science.gov (United States)

    Walia, Jaspreet; Dhindsa, Navneet; Flannery, Jeremy; Khodabad, Iman; Forrest, James; LaPierre, Ray; Saini, Simarjeet S

    2014-10-08

    The photothermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm(2). Nanowire temperatures were highly dependent on the nanowire diameter and were determined by measuring the spectral red-shift for both TO and LO phonons. The highest temperatures were observed for 95 nm diameter nanowires, whose top facets and sidewalls heated up to 600 and 440 K, respectively, and decreased significantly for the smaller or larger diameters studied. The diameter-dependent heating is explained by resonant coupling of the incident laser light into optical modes of the nanowires, resulting in increased absorption. Photothermal activity in a given nanowire diameter can be optimized by proper wavelength selection, as confirmed using computer simulations. This demonstrates that the photothermal properties of GaAs nanowires can be enhanced and tuned by using a photonic lattice structure and that smaller nanowire diameters are not necessarily better to achieve efficient photothermal conversion. The diameter and wavelength dependence of the optical coupling could allow for localized temperature gradients by creating arrays which consist of different diameters.

  18. Gallium arsenide exposure impairs splenic B cell accessory function.

    Science.gov (United States)

    Gondre-Lewis, Timothy A; Hartmann, Constance B; Caffrey, Rebecca E; McCoy, Kathleen L

    2003-03-01

    Gallium arsenide (GaAs) is utilized in industries for its semiconductor and optical properties. Chemical exposure of animals systemically suppresses several immune functions. The ability of splenic B cells to activate antigen-specific helper CD4(+) T cell hybridomas was assessed, and various aspects of antigen-presenting cell function were examined. GaAs-exposed murine B cells were impaired in processing intact soluble protein antigens, and the defect was antigen dependent. In contrast, B cells after exposure competently presented peptides to the T cells, which do not require processing. Cell surface expression of major histocompatibility complex (MHC) class II molecules and several costimulatory molecules on splenic B cells, which are critical for helper T cell activation, was not affected by chemical exposure. GaAs exposure also did not influence the stability of MHC class II heterodimers, suggesting that the defect may precede peptide exchange. GaAs-exposed B cells contained a normal level of aspartyl cathepsin activity; however, proteolytic activities of thiol cathepsins B and L were approximately half the control levels. Furthermore, two cleavage fragments of invariant chain, a molecular chaperone of MHC class II molecules, were increased in GaAs-exposed B cells, indicative of defective degradation. Thus, diminished thiol proteolytic activity in B cells may be responsible for their impaired antigen processing and invariant chain degradation, which may contribute to systemic immunosuppression caused by GaAs exposure.

  19. Wide band gap gallium arsenide nanoparticles fabricated using plasma method

    Energy Technology Data Exchange (ETDEWEB)

    Jain, D., E-mail: dvjainnov@gmail.com [Physics Department, Banasthali Vidyapith, Rajasthan-304022 (India); Mangla, O. [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Physics Department, Hindu College, University of Delhi, Delhi, 110007 (India); Roy, S. [Physics Department, Daulat Ram College, University of Delhi, Delhi, 110007 (India)

    2016-05-23

    In this paper, we have reported the fabrication of gallium arsenide (GaAs) nanoparticles on quartz placed at distance of 4.0 cm, 5.0 cm and 6.0 cm, respectively from top of anode. The fabrication has been carried out by highly energetic and high fluence ions of GaAs produced by hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. GaAs nanoparticles have mean size of about 23 nm, 16 nm and 14 nm for deposition at a distance of 4.0 cm, 5.0 cm and 6.0 cm, respectively. The nanoparticles are crystalline in nature as evident from X-ray diffraction patterns. The band gap of nanoparticles is found to increase from 1.425 eV to 5.37 eV at 4.0 cm distance, which further increases as distance increases. The wide band gap observed for fabricated GaAs nanoparticles suggest the possible applications of nanoparticles in laser systems.

  20. Piecewise simulaton proton test of gallium arsenide and thin silicon solar cells

    Science.gov (United States)

    Peterson, D. G.; Billets, S. A.

    1984-01-01

    Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

  1. Solvent-dependent assembly of terphenyl- and quaterphenyldithiol on gold and gallium arsenide.

    Science.gov (United States)

    Krapchetov, Dmitry A; Ma, Hong; Jen, Alex K Y; Fischer, Daniel A; Loo, Yueh-Lin

    2005-06-21

    The assembly of terphenyldithiol (TPDT) and quaterphenyldithiol (QPDT) on gold and gallium arsenide from ethanol (EtOH), tetrahydrofuran (THF), and solutions consisting of both solvents has been characterized by near-edge X-ray absorption fine structure spectroscopy. The surface coverage and the average orientation of both TPDT and QPDT on gold are solvent-independent. These molecules readily form monolayers on gold with an ensemble-average backbone tilt of 30 degrees +/- 3 degrees from the substrate normal. In sharp contrast, the assembly of TPDT and QPDT on gallium arsenide is extremely solvent-sensitive. At high ethanol fractions, both molecules form monolayers with an ensemble-average orientation that is indistinguishable from those on gold substrates. At low ethanol fractions and in pure THF, however, these molecules are disordered on gallium arsenide and the surface coverage is poor.

  2. Magnetoelectric effect in layered structures of amorphous ferromagnetic alloy and gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Bichurin, M.I., E-mail: mirza.bichurin@novsu.ru; Petrov, V.M.; Leontiev, V.S.; Ivanov, S.N.; Sokolov, O.V.

    2017-02-15

    A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide. The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200–240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials. - Highlights: • Theoretical modeling of ME interaction was conducted. • Experimental dependencies in the resonance range were done. • Maximal ME effect of gallium arsenide was observed.

  3. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    International Nuclear Information System (INIS)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-01-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

  4. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  5. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Science.gov (United States)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  6. Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

    International Nuclear Information System (INIS)

    Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

    1985-01-01

    Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

  7. Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

    DEFF Research Database (Denmark)

    Malinowski, Filip

    This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradient...... to put the highest, up to date, lower bound on the electron spin coherence time in gallium arsenide: 870 ms. Later, we study the perspectives of exploiting a multielectron quantum dot as a mediator of the exchange interaction. We investigate interaction between a single spin and the multelectron quantum...

  8. Boron isotopes and groundwater pollution

    International Nuclear Information System (INIS)

    Vengosh, A.

    1999-01-01

    Boron can be used as a tracer in ground water because of its high solubility in aqueous solutions, natural abundance in all waters, and the lack of effects by evaporation, volatilisation, oxidation-reduction reactions. Since the boron concentrations in pristine ground waters are generally low and contaminant sources are usually enriched in boron, the δ 11 B of groundwater is highly sensitive to the impact of contamination. The large isotopic variations of the potential sources can be used to trace the origin of the contamination and to reconstruct mixing and flow paths

  9. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    Vast, N.

    1999-01-01

    The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  10. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents.

  11. Nothing Boring About Boron

    Science.gov (United States)

    Pizzorno, Lara

    2015-01-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body’s use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD+); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin’s lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron’s beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron—only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis

  12. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan

    2009-10-01

    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  13. Combined Silicon and Gallium Arsenide Solar Cell UV Testing

    Science.gov (United States)

    Willowby, Douglas

    2005-01-01

    The near and long-term effect of UV on silicon solar cells is relatively understood. In an effort to learn more about the effects of UV radiation on the performance of GaAs/Ge solar cells, silicon and gallium arsenide on germanium (GaAs/Ge) solar cells were placed in a vacuum chamber and irradiated with ultraviolet light by a Spectrolab XT 10 solar simulator. Seventeen GaAs/Ge and 8 silicon solar cells were mounted on an 8 inch copper block. By having all the cells on the same test plate we were able to do direct comparison of silicon and GaAs/Ge solar cell degradation. The test article was attached to a cold plate in the vacuum chamber to maintain the cells at 25 degrees Celsius. A silicon solar cell standard was used to measure beam uniformity and any degradation of the ST-10 beam. The solar cell coverings tested included cells with AR-0213 coverglass, fused silica coverglass, BRR-0213 coverglass and cells without coverglass. Of interest in the test is the BRR-0213 coverglass material manufactured by OCLI. It has an added Infrared rejection coating to help reduce the solar cell operating temperature. This coverglass is relatively new and of interest to several current and future programs at Marshall. Due to moves of the laboratory equipment and location only 350 hours of UV degradation have been completed. During this testing a significant leveling off in the rate of degradation was reached. Data from the test and comparisons of the UV effect of the bare cells and cells with coverglass material will be presented.

  14. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    Science.gov (United States)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  15. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  16. Progress to a Gallium-Arsenide Deep-Center Laser

    Science.gov (United States)

    Pan, Janet L.

    2009-01-01

    Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers), which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  17. Structural, energetic, and electronic properties of hydrogenated aluminum arsenide clusters

    Science.gov (United States)

    Guo, Ling

    2011-05-01

    The chemisorptions of hydrogen on aluminum arsenide clusters are studied with density functional theory (DFT). The on-top site is identified to be the most favorable chemisorptions site for hydrogen. And the Al-top site is the preferred one in the most cases for one hydrogen adsorption in (AlAs) n ( n = 2, 5, 6, 8-15) clusters. Top on the neighboring Al and As atoms ground-state structures are found for two hydrogen adsorption on (AlAs) n except for (AlAs)2 cluster. The Al-As bond lengths decrease generally as the size of the cluster increases. And there is a slight increase in the mean Al-As bond lengths after H adsorption on the lowest-energy sites of the most AlAs clusters. In general, the binding energy of H and 2H are both found to decrease with an increase in the cluster size. And the result shows that large binding energies (BE) of a single hydrogen atom on small AlAs clusters and large highest occupied and lowest unoccupied molecular-orbital gaps for (AlAs)H and (AlAs)3H make these species behaving like magic clusters. Calculations on two hydrogen atoms on (AlAs) n clusters show large BE for (AlAs) n H2 with an odd number of n. The stability of these complexes is further studied from the fragmentation energies. (AlAs)7H2 and (AlAs)9H2 clusters are again suggested to be the stable clusters. On the other hand both the fragmentation energy and the binding energy for (AlAs)13H are close to the lowest values.

  18. Nano boron nitride flatland.

    Science.gov (United States)

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-02-07

    Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, among which is hexagonal boron nitride (h-BN), a layered material with a regular network of BN hexagons. This review provides an insight into the marvellous nano BN flatland, beginning with a concise introduction to BN and its low-dimensional nanostructures, followed by an overview of the past and current state of research on 2D BN nanostructures. A comprehensive review of the structural characteristics and synthetic routes of BN monolayers, multilayers, nanomeshes, nanowaves, nanoflakes, nanosheets and nanoribbons is presented. In addition, electronic, optical, thermal, mechanical, magnetic, piezoelectric, catalytic, ecological, biological and wetting properties, applications and research perspectives for these novel 2D nanomaterials are discussed.

  19. Next Generation Thermal Management Materials: Boron Arsenide for Isotropic Diamond Like Thermal Conductivity - Affordable BAs Processing Innovations, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The purpose of this SBIR phase I proposal is to design, develop and carry out the materials and process engineering studies to demonstrate the feasibility of...

  20. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  1. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Energy Technology Data Exchange (ETDEWEB)

    Mascarenhas, Angelo

    2017-08-01

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  2. Metal interactions with boron clusters

    International Nuclear Information System (INIS)

    Grimes, R.N.

    1982-01-01

    This book presents information on the following topics: the structural and bonding features of metallaboranes and metallacarboranes; transition-metal derivatives of nido-boranes and some related species; interactions of metal groups with the octahydrotriborate (1-) anion, B 3 H 8 ; metallaboron cage compounds of the main group metals; closo-carborane-metal complexes containing metal-carbon and metal-boron omega-bonds; electrochemistry of metallaboron cage compounds; and boron clusters with transition metal-hydrogen bonds

  3. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  4. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  5. Light transport through disordered layers of dense gallium arsenide submicron particles

    NARCIS (Netherlands)

    Van der Beek, T.; Barthelemy, P.J.C.; Johnson, P.M.; Wiersma, D.S.; Lagendijk, A.

    2012-01-01

    We present a study of optical transport properties of powder layers with submicrometer, strongly scattering gallium arsenide (GaAs) particles. Uniform, thin samples with well controlled thicknesses were created through the use of varying grinding times, sedimentation fractionation, annealing, and a

  6. Continuum modelling of silicon diffusion in indium gallium arsenide

    Science.gov (United States)

    Aldridge, Henry Lee, Jr.

    A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

  7. Gallium interstitial contributions to diffusion in gallium arsenide

    Science.gov (United States)

    Schick, Joseph T.; Morgan, Caroline G.

    2011-09-01

    encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

  8. Gallium interstitial contributions to diffusion in gallium arsenide

    Directory of Open Access Journals (Sweden)

    Joseph T. Schick

    2011-09-01

    have been encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

  9. Future boronated molecules for neutron capture therapy

    International Nuclear Information System (INIS)

    Soloway, A.H.; Alam, F.; Barth, R.F.

    1986-01-01

    The ability of several boron compounds to localize in tumor cells is examined. A number of first and second generation compounds which were not synthesized specifically for localization are described. Among these are the boron hydrides and boranes. A third generation of boron compounds are designed for selective localization. These fall into two groups: relatively small organic compounds and boronated antibodies, both of which are discussed here

  10. Compression and Associated Properties of Boron Carbide

    Science.gov (United States)

    2008-12-01

    Klandadze, G.I., and Eristavi, A.M., 1999: IR- Active Phonons and Structure Elements of Isotope - Enriched Boron Carbide, J. Sol. State Chem. 154, 79- 86...COMPRESSION AND ASSOCIATED PROPERTIES OF BORON CARBIDE D. P. Dandekar*and J. A. Ciezak Army Research Laboratory, APG, MD 21005 M. Somayazulu...of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress

  11. Lattice vibrations in α-boron

    International Nuclear Information System (INIS)

    Richter, W.

    1976-01-01

    α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

  12. Synthesis of oligomeric boron-containing phospolyols

    International Nuclear Information System (INIS)

    Bondarenko, S.N.; Khokhlova, T.V.; Orlova, S.A.; Tuzhikov, O.I.

    2006-01-01

    Structure is investigated and reactivity of oligomeric boron-containing phospolyols is studied. Oligomeric boron-containing compound interacts with ethylene glycol, diethylene glycol, glycerol, 1,4-butandiol with formation of linear boron-containing phospolyols. Reactions proceed in noncatalytic conditions with stoichiometric quantities of reagents at 170-200 Deg C in inert gas media. Boron-containing phospolyols are viscous uncolored liquids, their physicochemical characteristics are represented [ru

  13. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  14. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    Jaraiz Franco, E.; Esteban Hernandez, J. A.

    1960-01-01

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe 2 B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  15. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  16. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  17. Chemical separation of boron isotopes

    International Nuclear Information System (INIS)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF 3 gas and the liquid molecular addition compounds of BF 3 . Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF 3 solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references

  18. Chemical separation of boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF/sub 3/ gas and the liquid molecular addition compounds of BF/sub 3/. Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF/sub 3/ solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references.

  19. Boron cycling in subduction zones

    OpenAIRE

    Palmer, Martin R.

    2017-01-01

    Subduction zones are geologically dramatic features, with much of the drama being driven by the movement of water. The “light and lively” nature of boron, coupled with its wide variations in isotopic composition shown by the different geo-players in this drama, make it an ideal tracer for the role and movement of water during subduction. The utility of boron ranges from monitoring how the fluids that are expelled from the accretionary prism influence seawater chemistry, to the subduction of c...

  20. Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

    Science.gov (United States)

    Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

    2017-01-01

    Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

  1. Synthesis of boron nitride from boron containing poly (vinyl alcohol ...

    Indian Academy of Sciences (India)

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier ...

  2. Boron analysis and boron imaging in biological materials for Boron Neutron Capture Therapy (BNCT).

    Science.gov (United States)

    Wittig, Andrea; Michel, Jean; Moss, Raymond L; Stecher-Rasmussen, Finn; Arlinghaus, Heinrich F; Bendel, Peter; Mauri, Pier Luigi; Altieri, Saverio; Hilger, Ralf; Salvadori, Piero A; Menichetti, Luca; Zamenhof, Robert; Sauerwein, Wolfgang A G

    2008-10-01

    Boron Neutron Capture Therapy (BNCT) is based on the ability of the stable isotope 10B to capture neutrons, which leads to a nuclear reaction producing an alpha- and a 7Li-particle, both having a high biological effectiveness and a very short range in tissue, being limited to approximately one cell diameter. This opens the possibility for a highly selective cancer therapy. BNCT strongly depends on the selective uptake of 10B in tumor cells and on its distribution inside the cells. The chemical properties of boron and the need to discriminate different isotopes make the investigation of the concentration and distribution of 10B a challenging task. The most advanced techniques to measure and image boron are described, both invasive and non-invasive. The most promising approach for further investigation will be the complementary use of the different techniques to obtain the information that is mandatory for the future of this innovative treatment modality.

  3. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  4. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  5. Boron removal from wastewater using adsorbents.

    Science.gov (United States)

    Kluczka, J; Trojanowska, J; Zolotajkin, M; Ciba, J; Turek, M; Dydo, P

    2007-01-01

    In the present study, boron adsorption on activated alumina and activated carbon impregnated with calcium chloride, tartaric acid and mannitol was investigated. The adsorbate in question was the wastewater from the chemical landfill in Tarnowskie Gory of 25-70 mg l(-1) boron content. The removal of boron from the above-described wastewater was examined in the static (batch) and dynamic (column) experiments. The static experiments were carried out to assess boron adsorption isotherms, based on which the most efficient adsorbent as well as the rough resin load was determined. On the basis of the dynamic experiment results, the boron adsorptive capacities of the examined resins were deduced. It was concluded that the use of the impregnants increased the ability of activated carbon to adsorb boron. Granulated activated carbon WG-12 impregnated with mannitol was found to be the most promising for the boron removal from wastewater of the Chemical Wastewater Plant in Tarnowskie Gory.

  6. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss......H sensing, we apply the same to a more complex system - proteins. The sensing protocol involves the functionalization of the sensor surface with a receptor protein followed by the addition of the protein of interest. Sensor response to oppositely charged proteins is used to confirm the sensitivity...... of the sensor to the protein charge....

  7. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  8. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.

    1997-01-01

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  9. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    electrolysis was crystalline in nature, X-ray diffraction pat-. ∗. Author for correspondence (sas@igcar.gov.in) .... Elemental boron was synthesized by the electrolysis of molten potassium fluroborate dissolved in a ... A high-throughput Renishaw micro-Raman spectrome- ter (model Invia) was employed to record Raman ...

  10. Preparation process of boron nitride

    International Nuclear Information System (INIS)

    Mignani, G.; Ardaud, P.

    1990-01-01

    High purity boron nitride, without Si and a low carbon content, is prepared by pyrolysis, under an ammoniac atmosphere, of the reaction product between a B-trihalogenoborazole and a primary amine RNH 2 when R is a hydrocarbon radical eventually substituted containing from 1 to 6 carbon atoms inclusively [fr

  11. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

  12. Method of separating boron isotopes

    Science.gov (United States)

    Jensen, Reed J.; Thorne, James M.; Cluff, Coran L.; Hayes, John K.

    1984-01-01

    A method of boron isotope enrichment involving the isotope preferential photolysis of (2-chloroethenyl)dichloroborane as the feed material. The photolysis can readily be achieved with CO.sub.2 laser radiation and using fluences significantly below those required to dissociate BCl.sub.3.

  13. Prevention of uncontrolled boron dilution

    International Nuclear Information System (INIS)

    Sere, J. L.

    1997-01-01

    The paper presents a synthesis of the global analysis of uncontrolled boron dilution risk performed by (European Consortium Mochovce (EUCOM) in the frame of Safety Measures RC 01 and AA 11. Recommendation for additional improvements (mainly I and C interlocks or inhibition) are presented. (author)

  14. Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Davis, M.; Bendel, P.

    1988-01-01

    Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

  15. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition ? An in vitro study

    OpenAIRE

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth′s outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 n...

  16. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

    Science.gov (United States)

    O'Neill, Mark J.; Piszczor, Michael F.

    1988-01-01

    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  17. Changes in gallium arsenide composition near surface under bombardment by Ar+ ions

    International Nuclear Information System (INIS)

    Bert, N.A.; Konnikov, S.G.; Korol'kov, A.V.; Pogrebitskij, K.Yu.

    1988-01-01

    Experimental data on changes in gallium arsenide chemical composition near surface under bombardment by Ar + ions with 5 keV energy are presented. It is shown that in the process described changes are observed in the chemical composition near surface, which result in formation of neighbouring regions with the ratios X Ga /X As >1 and X Ga /X As <1. This phenomenon may have important consequences when using ion beam processing in different technological methods and diagnostics

  18. Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

    Science.gov (United States)

    Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

    2015-03-01

    High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

  19. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics.

    Science.gov (United States)

    Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K

    2013-01-01

    Epitaxial lift-off process enables the separation of III-V device layers from gallium arsenide substrates and has been extensively explored to avoid the high cost of III-V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an epitaxial lift-off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading to direct reuse of the gallium arsenide substrate. The successful direct substrate reuse is confirmed by the performance comparison of solar cells grown on the original and the reused substrates. Following the features of our epitaxial lift-off process, a high-throughput technique called surface tension-assisted epitaxial lift-off was developed. In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and flexible substrates, we also demonstrate devices, including light-emitting diode and metal-oxide-semiconductor capacitor, first built on thin active layers and then transferred to secondary substrates.

  20. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

    Science.gov (United States)

    Francis, R. W.; Betz, F. E.

    1985-01-01

    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  1. Effects of boron-water on cattle

    Energy Technology Data Exchange (ETDEWEB)

    Green, G.H.; Weeth, H.J.

    1975-01-01

    To determine the effects of subtoxic concentrations of boron in drinking water, 12 Hereford heifers were used in a 3 x 3 latin-square experiment with four squares. Treatments were tap-water (0.8 ppm boron), 150 ppm boron-water, and 300 ppm boron-water. Periods were 30 days each. Total urine was collected during the last week of each period, and renal clearance observations (based on creatinine) were made on the last day of each period. While water consumption and total urine weight were not affected by the boron treatments, hay consumption decreased, and weight loss was noted. Plasma boron concentrations were 0.53 +/- 0.151 ppm, 11.2 +/- 0.91 ppm, and 18.9 +/- 0.60 ppm while the heifers were drinking tap-water, 150 ppm boron-water, and 300 ppm boron-water respectively. Urinary boron excretion rates were tap water, 64 +/- 5.6 mg/day; 150 ppm, 2841 +/- 181.2 mg/day; 300 ppm, 4932 +/- 173.3 mg/day. Although glomerular filtration and osmolal clearance were unaffected by the boron-waters, a relative diuresis was indicated by the free water clearance effects. The percent of filtered boron which was reabsorbed decreased with increased exogenous boron, as well as both plasma and urinary phosphate. These data indicate that 300 ppm boron is not acutely toxic to heifers when consumed via the drinking water. The safe tolerance concentration, however, must lie below 150 ppm because this concentration was responsible for some deleterious effects.

  2. Re-sintered boron-rich polycrystalline cubic boron nitride and method for making same

    Energy Technology Data Exchange (ETDEWEB)

    Lavens, T.R.; Corrigan, F.R.; Shott, R.L.; Bovenkerk, H.P.

    1987-06-16

    A method is described for making re-sintered polycrystalline cubic boron nitride (CBN) which comprises: (a) placing sintered substantially catalyst-free boron-rich polycrystalline cubic boron nitride particles in a high pressure/high temperature apparatus, the particles being substantially free of sintering inhibiting impurities; (b) subjecting the boron-rich cubic boron nitride particles to a pressure and a temperature adequate to re-sinter the particles, the temperature being below the CBN reconversion temperature; (c) maintaining the temperature and pressure for a time sufficient to re-sinter the boron-rich cubic boron nitride particles in the apparatus, and (d) recovering the re-sintered polycrystalline cubic boron nitride from the apparatus.

  3. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed.

  4. Boron-10 ABUNCL Active Testing

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Ely, James H.; Lintereur, Azaree T.; Siciliano, Edward R.

    2013-07-09

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results from testing of the active mode of the General Electric Reuter-Stokes Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) at Los Alamos National Laboratory using sources and fuel pins.

  5. Boron removal from geothermal waters by electrocoagulation.

    Science.gov (United States)

    Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar; Yilmaz, M Tolga; Paluluoğlu, Cihan

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm(2), but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  6. Removal of boron (B) from waste liquors.

    Science.gov (United States)

    Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

    2006-01-01

    This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.

  7. The boron geochemistry of siliceous sponges

    Science.gov (United States)

    de Leon, A.; Wille, M.; Eggins, S. M.; Ellwood, M. J.

    2009-12-01

    The boron content and isotopic composition (δ11B) of marine carbonate organisms can be linked to the pH of the seawater in which they have grown, making carbonates a useful tool for palaeo-seawater pH reconstruction. A study by Furst (1981) documented unusually high boron concentrations in siliceous sponge spicules, in range from hundreds to a thousand ppm. This observation and the potential for preferential incorporation of the tetrahedral borate species into biogenic silica raises the question as to whether the boron chemistry of biogenic silica might also be influenced by seawater pH. We have measured the boron concentration and isotopic composition of siliceous sponges from the Southern Ocean region, with a view to (1) confirming the observations of Furst (1981), (2) assessing the factors that control boron incorporation and isotopic compositions of sponge silica, and (3) investigating the potentially significant role of siliceous sponges in the marine boron cycle. The measured boron concentrations in a diverse range of both demosponge and hexactinellid sponges confirm the high boron concentrations previously reported. The boron isotope compositions of these sponges vary from around +2‰ to +25‰ and greatly exceed the range in marine carbonates. This isotopic variation is inconsistent with seawater pH control but is correlated with ambient seawater silicon concentration, in a manner that suggests a link to silicon uptake kinetics and demand by sponges.

  8. Mineral resource of the month: boron

    Science.gov (United States)

    Crangle, Robert D.

    2012-01-01

    The article offers information on the mineral, boron. Boron compounds, particularly borates, have more commercial applications than its elemental relative which is a metalloid. Making up the 90% of the borates that are used worldwide are colemanite, kernite, tincal, and ulexite. The main borate deposits are located in the Mojave Desert of the U.S., the Tethyan belt in southern Asia, and the Andean belt of South America. Underground and surface mining are being used in gathering boron compounds. INSETS: Fun facts;Boron production and consumption.

  9. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  10. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    Science.gov (United States)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  11. Effect of gallium-arsenide laser, gallium-aluminum-arsenide laser and healing ointment on cutaneous wound healing in Wistar rats

    Directory of Open Access Journals (Sweden)

    R.V. Gonçalves

    2010-04-01

    Full Text Available This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs, gallium-arsenide laser (GaAs and Dersani® healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals’ backs. The depth of the surgical incision was controlled by removing the epithelial tissue until the dorsal muscular fascia was exposed. The animals were anesthetized with ketamine and xylazine via intraperitoneal injection. The rats were randomly divided into five groups of 6 animals each, according to the treatment received. Group 1 (L4: GaAs laser (4 J/cm²; group 2 (L30: GaAlAs laser (30 J/cm²; group 3 (L60: GaAlAs laser (60 J/cm²; group 4 (D: Dersani® ointment; group 5 (control: 0.9% saline. The applications were made daily over a period of 20 days. Tissue fragments were stained with picrosirius to distinguish type I collagen from type III collagen. The collagen fibers were photo-documented and analyzed using the Quantum software based on the primary color spectrum (red, yellow and blue. Significant results for wound closing rate were obtained for group 1 (L4, 7.37 mm/day. The highest concentration of type III collagen fibers was observed in group 2 (L30; 37.80 ± 7.10%, which differed from control (29.86 ± 5.15% on the 20th day of treatment. The type I collagen fibers of group 1 (L4; 2.67 ± 2.23% and group 2 (L30; 2.87 ± 2.40% differed significantly from control (1.77 ± 2.97% on the 20th day of the experiment.

  12. Effect of gallium-arsenide laser, gallium-aluminum-arsenide laser and healing ointment on cutaneous wound healing in Wistar rats.

    Science.gov (United States)

    Gonçalves, R V; Mezêncio, J M S; Benevides, G P; Matta, S L P; Neves, C A; Sarandy, M M; Vilela, E F

    2010-04-01

    This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs), gallium-arsenide laser (GaAs) and Dersani healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals' backs. The depth of the surgical incision was controlled by removing the epithelial tissue until the dorsal muscular fascia was exposed. The animals were anesthetized with ketamine and xylazine via intraperitoneal injection. The rats were randomly divided into five groups of 6 animals each, according to the treatment received. Group 1 (L4): GaAs laser (4 J/cm(2)); group 2 (L30): GaAlAs laser (30 J/cm(2)); group 3 (L60): GaAlAs laser (60 J/cm(2)); group 4 (D): Dersani ointment; group 5 (control): 0.9% saline. The applications were made daily over a period of 20 days. Tissue fragments were stained with picrosirius to distinguish type I collagen from type III collagen. The collagen fibers were photo-documented and analyzed using the Quantum software based on the primary color spectrum (red, yellow and blue). Significant results for wound closing rate were obtained for group 1 (L4), 7.37 mm/day. The highest concentration of type III collagen fibers was observed in group 2 (L30; 37.80 + or - 7.10%), which differed from control (29.86 + or - 5.15%) on the 20th day of treatment. The type I collagen fibers of group 1 (L4; 2.67 + or - 2.23%) and group 2 (L30; 2.87 + or - 2.40%) differed significantly from control (1.77 + or - 2.97%) on the 20th day of the experiment.

  13. Comparative study of the toxic effects of gallium arsenide, indium arsenide and arsenic trioxide following intratracheal instillations to the lung of Syrian golden hamsters.

    Science.gov (United States)

    Tanaka, A; Hirata, M; Omura, M; Zhao, M; Makita, Y; Yamazaki, K; Inoue, N; Gotoh, K

    2000-01-01

    Toxic effects of gallium arsenide (GaAs), indium arsenide (InAs) and arsenic trioxide (As2O3) were studied in male Syrian golden hamsters. GaAs (7.7 mg/kg) and As2O3 (1.3 mg/kg) particles were instilled intratracheally twice a week a total of 16 times, while InAs (7.7 mg/kg) was instilled a total of 14 times. As a control, hamsters were treated with the vehicle, phosphate buffer solution. During the instillation period, the cumulative body weight gain of the InAs-, but not the GaAs- or As2O3-treated hamsters was suppressed significantly, when compared with the control group. Slight to severe inflammatory responses were observed in the lung for all treatment groups. The most severe inflammatory change, characterized by an accumulation of neutrophils and macrophages, exudation, thickness of the pleura and fibrotic proliferation was found in the InAs-treated hamsters. Extensive alveolar or bronchiolar cell hyperplasia with or without keratinizing squamous cell metaplasia was observed in almost all the InAs-treated hamsters. Furthermore, squamous cell metaplasia or squamous cell hyperplasia developed in some of the InAs-treated hamsters, but not in the GaAs- or As2O3-treated hamsters. Slight to mild lesions were found in the convoluted tubules of the kidney in both the GaAs and InAs groups. From the present study, the toxic potency of these particles was provisionally estimated to be in the following order: InAs > GaAs > As2O3, at the dosage level used in this study. Furthermore, there was evidence that InAs particles could induce pulmonary, renal or systemic toxicity, and as such, InAs particles may produce pulmonary precancerous change when instilled intratracheally into hamsters.

  14. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review

    International Nuclear Information System (INIS)

    Carter, Dean E.; Aposhian, H. Vasken; Gandolfi, A. Jay

    2003-01-01

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding aresenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolities, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the aresnic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  15. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Paschoal, J.O.A.

    1988-01-01

    Boron carbide (B 4 C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B 4 C by carbothermic reduction of B 2 O 3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B 4 C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author) [pt

  16. Boron Carbides As Thermo-electric Materials

    Science.gov (United States)

    Wood, Charles

    1988-01-01

    Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

  17. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  18. Hot flow behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; El-Wahabi, M.; Cabrera, J.M.

    2008-01-01

    This research work studies the effect of boron contents on the hot flow behavior of boron microalloyed steels. For this purpose, uniaxial hot-compression tests were carried out in a low carbon steel microalloyed with four different amounts of boron over a wide range of temperatures (950, 1000, 1050 and 1100 deg. C) and constant true strain rates (10 -3 , 10 -2 and 10 -1 s -1 ). Experimental results revealed that both peak stress and peak strain tend to decrease as boron content increases, which indicates that boron additions have a solid solution softening effect. Likewise, the flow curves show a delaying effect on the kinetics of dynamic recrystallization (DRX) when increasing boron content. Deformed microstructures show a finer austenitic grain size in the steel with higher boron content (grain refinement effect). Results are discussed in terms of boron segregation towards austenitic grain boundaries during plastic deformation, which increases the movement of dislocations, enhances the grain boundary cohesion and modificates the grain boundary structure

  19. Compression and associated properties of boron carbide

    Science.gov (United States)

    Ciezak, Jennifer; Dandekar, Dattatraya

    2009-06-01

    The observed loss of shear strength of boron carbide around 22 GPa has been attributed to presence of amorphous material in the shock recovered, and statically indented and pressurized boron carbide. The present work presents a more direct association of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress compression. This evidence is obtained from in-situ measurement of Raman, and infrared vibrational spectra of boron carbide confined in a Diamond Anvil Cell (DAC) under hydrostatic and non-hydrostatic pressures. X-ray-diffraction measurements do show a shift in the compression of boron carbide around 27 GPa. However, X-ray diffraction measurements indicate that the amorphization does not extend to micron scale, as there is no evidence of a loss of crystallinity in the recorded diffraction pattern of boron carbide to 47 GPa. Our work shows that shear plays a very dominant role in the stress-induced amorphization of boron carbide.

  20. Ultratough single crystal boron-doped diamond

    Science.gov (United States)

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  1. Spectral tailoring for boron Neutron capture therapy

    NARCIS (Netherlands)

    Nievaart, V.A.

    2007-01-01

    In several places in the world, such as Petten and Delft in the Netherlands, investigations are in progress in the fight against certain types of cancer with Boron Neutron Capture Therapy. The basic idea is very simple: boron is loaded only into the cancer cells, using a special drug, after which

  2. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Fitzsimmons, M.; Pynn, R.

    1997-01-01

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  3. Possible toxicity of boron on sugar cane

    Energy Technology Data Exchange (ETDEWEB)

    Bravo C., M.

    Analyses of necrotic and green leaf tissues from sugar cane grown in the Tambo Valley (Arequipa, Peru) have shown that the boron concentration in necrotic tissue (average 657.7 ppm) is several times higher than that in the green tissue (average 55.7 ppm). This suggests that the necrosis may be due to boron toxicity.

  4. Terahertz emission from collapsing field domains during switching of a gallium arsenide bipolar transistor.

    Science.gov (United States)

    Vainshtein, Sergey; Kostamovaara, Juha; Yuferev, Valentin; Knap, Wojciech; Fatimy, Abdel; Diakonova, Nina

    2007-10-26

    Broadband pulsed THz emission with peak power in the sub-mW range has been observed experimentally during avalanche switching in a gallium arsenide bipolar junction transistor at room temperature, while significantly higher total generated power is predicted in simulations. The emission is attributed to very fast oscillations in the conductivity current across the switching channels, which appear as a result of temporal evolution of the field domains generated in highly dense electron-hole plasma. This plasma is formed in turn by powerful impact ionization in multiple field domains of ultrahigh amplitude.

  5. Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

    Directory of Open Access Journals (Sweden)

    Yangsen Kang

    2015-01-01

    Full Text Available We demonstrate a high-throughput, solution-based process for subwavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs solar cell. The nanostructured ZnO films have demonstrated antireflection and light scattering properties over the visible/near-infrared (NIR spectrum. The results show a broadband spectral enhancement of the solar cell external quantum efficiency (EQE, a 16% enhancement of short circuit current, and a 10% increase in photovoltaic efficiency.

  6. Efficiency Enhancement of Gallium Arsenide Photovoltaic Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

    International Nuclear Information System (INIS)

    Kang, Y.; Huo, Y.; Chen, Y.; Christoforo, M. G.; Harris, J.S.; Liang, D.; Mehra, S.; Salleo, A.; Harris, J.S.; Harris, J.S.

    2015-01-01

    We demonstrate a high-throughput, solution-based process for sub wavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO) nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs) solar cell. The nano structured ZnO films have demonstrated antireflection and light scattering properties over the visible/near-infrared (NIR) spectrum. The results show a broadband spectral enhancement of the solar cell external quantum efficiency (EQE), a 16% enhancement of short circuit current, and a 10% increase in photovoltaic efficiency

  7. Comparative performance of silicon and gallium arsenide solar cells on a high altitude sounding rocket

    Science.gov (United States)

    Thomas, N. L.; Chisel, D. M.

    1977-01-01

    The use of sounding rockets for calibrating solar cells offers two principal advantages: (1) there is no effect due to the terrestrial atmosphere, and (2) the cells are recoverable immediately after the calibration. On March 30, 1976, 29 n/p silicon and four p/n gallium arsenide solar cells were calibrated in space and successfully recovered from a NASA-Astrobee F rocket that reached a peak altitude of 230 km. Approximately 75 IV characteristic curves were generated for 32 of the cells to an accuracy of plus or minus 0.2 ma and plus or minus 0.2 mV.

  8. On-orbit performance of LIPS gallium arsenide solar cell experiment

    Science.gov (United States)

    Bavaro, T.; Francis, R.; Pennell, M.

    1984-01-01

    Telemetry from the Living Plume Shield's gallium arsenide solar panel experiment was evaluated to determine degradation. The data were culled to preclude spurious results from possible shadowing or inaccurate measurements on a cold array. Two independent methods were then used to obtain the maximum power points and the various characteristics of the solar array. Fill factor, open circuit voltage, short circuit current, and series and shunt resistances were examined. The data analysis concluded that, to date, nearly all of the solar array degradation is due to the reduction in the short circuit current.

  9. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  10. Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator.

    Science.gov (United States)

    Shambat, Gary; Ellis, Bryan; Mayer, Marie A; Majumdar, Arka; Haller, Eugene E; Vučković, Jelena

    2011-04-11

    We demonstrate a gallium arsenide photonic crystal cavity injection-based electro-optic modulator coupled to a fiber taper waveguide. The fiber taper serves as a convenient and tunable waveguide for cavity coupling with minimal loss. Localized electrical injection of carriers into the cavity region via a laterally doped p-i-n diode combined with the small mode volume of the cavity enable ultra-low energy modulation at sub-fJ/bit levels. Speeds of up to 1 GHz are demonstrated with photoluminescence lifetime measurements revealing that the ultimate limit goes well into the tens of GHz. © 2011 Optical Society of America

  11. DNA detection using plasmonic enhanced near-infrared photoluminescence of gallium arsenide.

    Science.gov (United States)

    Tang, Longhua; Chun, Ik Su; Wang, Zidong; Li, Jinghong; Li, Xiuling; Lu, Yi

    2013-10-15

    Efficient near-infrared detection of specific DNA with single nucleotide polymorphism selectivity is important for diagnostics and biomedical research. Herein, we report the use of gallium arsenide (GaAs) as a sensing platform for probing DNA immobilization and targeting DNA hybridization, resulting in ∼8-fold enhanced GaAs photoluminescence (PL) at ∼875 nm. The new signal amplification strategy, further coupled with the plasmonic effect of Au nanoparticles, is capable of detecting DNA molecules with a detection limit of 0.8 pM and selectivity against single base mismatches. Such an ultrasensitive near-infrared sensor can find a wide range of biochemical and biomedical applications.

  12. Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines

    Science.gov (United States)

    Romanofsky, Robert R.

    1989-01-01

    In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.

  13. Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary

    Science.gov (United States)

    1988-01-01

    Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

  14. Gallium arsenide particle detectors: a study of the active region and charge-collection efficiency

    International Nuclear Information System (INIS)

    Berluti, L.; D'Auria, S.; Mattei, G.; Proia, M.; Rinaldi, P.; Zichichi, A.

    1995-01-01

    Gallium arsenide particle detectors made by Alenia SpA have been tested within the context of the RD-8 project and found to have a high charge-collection efficiency (75%). We have analysed the data and found the overall behaviour of these detectors to be coherent and understandable in terms of one function: the local charge-collection efficiency. Two ways have been used to measure the width of the active region and the increase of such a width as a function of bias is found not to be consistent with a simple square-root law. ((orig.))

  15. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    Mohapatra, K.K.; Bose, Arun

    2014-01-01

    10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

  16. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  17. Continuum modeling of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Song, J; Wu, J; Hwang, K C; Huang, Y

    2008-01-01

    Boron nitride nanotubes display unique properties and have many potential applications. A finite-deformation shell theory is developed for boron nitride nanotubes directly from the interatomic potential to account for the effect of bending and curvature. Its constitutive relation accounts for the nonlinear, multi-body atomistic interactions, and therefore can model the important effect of tube chirality and radius. The theory is then used to determine whether a single-wall boron nitride nanotube can be modeled as a linear elastic isotropic shell. Instabilities of boron nitride nanotubes under different loadings (e.g., tension, compression, and torsion) are also studied. It is shown that the tension instability of boron nitride nanotubes is material instability, while the compression and torsion instabilities are structural instabilities.

  18. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  19. Analysis of boron nitride by flame spectrometry methods

    International Nuclear Information System (INIS)

    Telegin, G.F.; Chapysheva, G.Ya.; Shilkina, N.N.

    1989-01-01

    A rapid method has been developed for determination of free and total boron contents as well as trace impurities in boron nitride by using autoclave sample decomposition followed by atomic emission and atomic absorption determination. The relative standard deviation is not greater than 0.03 in the determination of free boron 0.012 in the determination of total boron content

  20. Chemical vapor deposited boron carbide

    International Nuclear Information System (INIS)

    Mackinnon, I.D.R.; Smith, K.L.

    1987-01-01

    Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD) show that two basic types of whiskers are produced at low temperatures (between 1200 0 C and 1400 0 C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanisms

  1. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  2. Boron Enrichment in Martian Clay

    Science.gov (United States)

    Nagashima, Kazuhide; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  3. Positron annihilation in boron nitride

    Directory of Open Access Journals (Sweden)

    N.Amrane

    2006-01-01

    Full Text Available Electron and positron charge densities are calculated as a function of position in the unit cell for boron nitride. Wave functions are derived from pseudopotential band structure calculations and the independent particle approximation (IPM, respectively, for electrons and positrons. It is observed that the positron density is maximum in the open interstices and is excluded not only from ion cores but also to a considerable degree from valence bonds. Electron-positron momentum densities are calculated for (001,110 planes. The results are used in order to analyse the positron effects in BN.

  4. Boron nutrition and yield of alfalfa cultivar crioula in relation to boron supply

    Directory of Open Access Journals (Sweden)

    Santos Anacleto Ranulfo dos

    2004-01-01

    Full Text Available Alfalfa cultivar Crioula (Medicago sativa cv. Crioula is grown in South Brazil and only a few studies on the plants' boron requirement are available. A greenhouse experiment was carried out with alfalfa to measure boron acquisition, production and distribution in the plant; data on critical level and production potentials were recorded. Plants were grown in ground quartz added with 1 L of solution, with the following boron rates: 0, 0.0625, 0.125, 0.25, 0.50, 1.00, and 2.00 mg L-1. Plants were harvested at 46 days of growth. Forage dry mass was increased by boron supply and dry matter accumulation was considerably low in control. Boron concentration in the leaves was higher than in the stems or roots. Boron utilization from the external solution reached 90% at 0.0625 mg L-1 and sharply decreased with further increasing boron rates. Boron concentration and content in the leaves and in plant tops were at maximum when applied boron was between 1.5 and 1.6 mg L-1. Critical levels of boron in plant were 61 mg kg-1 in the leaves and 39 mg kg-1 in plant tops for this cultivar of alfalfa.

  5. Experimental boron neutron capture therapy for melanoma: Systemic delivery of boron to melanotic and amelanotic melanoma

    International Nuclear Information System (INIS)

    Coderre, J.A.; Glass, J.D.; Micca, P.; Greenberg, D.; Packer, S.

    1990-01-01

    The boron-containing melanin precursor analogue p-boronophenylalanine (BPA) has previously been shown to selectively deliver boron to pigmented murine melanomas when administered in a single intragastric dose. If boron neutron capture therapy is to become a clinically useful method of radiation therapy for human malignant melanoma, the boron carrier must be capable of delivering useful amounts of boron to remote tumor sites (metastases) and to poorly pigmented melanomas. The authors have now determined the ability of BPA to accumulate in several nonpigmented melanoma models including human melanoma xenografts in nude mice. The absolute amount of boron in the nonpigmented melanomas was about 50% of the observed in the pigmented counterparts but was still selectively concentrated in the tumor relative to normal tissues in amounts sufficient for effective neutron capture therapy. Single intragastric doses of BPA resulted in selective localization of boron in the amelanotic Greene melanoma carried in the anterior chamber of the rabbit eye and in a pigmented murine melanoma growing in the lungs. The ratio of the boron concentration in these tumors to the boron concentration in the immediately adjacent normal tissue was in the range of 3:1 to 4:1. These distribution studies support the proposal that boron neutron capture therapy may be useful as a regional therapy for malignant melanoma

  6. Study of ceramic mixed boron element as a neutron shielding

    International Nuclear Information System (INIS)

    Ismail Mustapha; Mohd Reusmaazran Yusof; Md Fakarudin Ab Rahman; Nor Paiza Mohamad Hasan; Samihah Mustaffha; Yusof Abdullah; Mohamad Rabaie Shari; Airwan Affandi Mahmood; Nurliyana Abdullah; Hearie Hassan

    2012-01-01

    Shielding upon radiation should not be underestimated as it can causes hazard to health. Precautions on the released of radioactive materials should be well concerned and considered. Therefore, the combination of ceramic and boron make them very useful for shielding purpose in areas of low and intermediate neutron. A six grades of ceramic tile have been produced namely IMN05 - 5 % boron, IMN06 - 6 % boron, IMN07 - 7 % boron, IMN08 - 8 % boron, IMN09 - 9 % boron, IMN10 - 10 % boron from mixing, press and sintered process. Boron is a material that capable of absorbing and capturing neutron, so that neutron and gamma test were conducted to analyze the effectiveness of boron material in combination with ceramic as shielding. From the finding, percent reduction number of count per minute shows the ceramic tiles are capable to capture neutron. Apart from all the percentage of boron used, 10 % is the most effective shields since the percent reduction indicating greater neutron captured increased. (author)

  7. Analysis of Boron Distribution in Steel using Neutron at HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Eun-Joo; Seong, Baek-Seok; Kim, Hark-Rho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2007-07-01

    Boron is very useful element in steels to improve the mechanical properties. In steel matrix, boron exist several types such as solute, segregation in grain boundary and many kinds of precipitate, which influence the properties of the steel. But, detecting of boron using X-ray or ion-beam is not easy because boron is very light atom than iron. However neutron gives the clear image of boron distribution from the particle tracking autoradiography (PTA) method. The PTA method of boron uses the phenomenon that boron irradiated by neutron emits Liion and alpha particle. Boron distribution can be obtained by observing the traces of the emitted Li-ion and alpha particle. At HANARO, the study for observing of boron distribution has been performed several years ago. Recently, the experimental techniques were improved for the reactor power of 30 MW. In this paper, improved experimental techniques were described and some results for boron added low-carbon steel plate were introduced.

  8. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition - An in vitro study.

    Science.gov (United States)

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Paired "t" test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. The power setting that gave statistically significant results was 3.5 watts.

  9. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study

    Science.gov (United States)

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Statistical Analysis Used: Paired “t” test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. Results: The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. Conclusions: The power setting that gave statistically significant results was 3.5 watts. PMID:27099427

  10. MBE growth of nitride-arsenide materials for long wavelength optoelectronics[Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Spruytte, S.G.; Coldren, C.W.; Marshall, A.F.; Larson, M.C.; Harris, J.S.

    2000-07-01

    Group III-Nitride-Arsenides are promising materials for 1.3{micro}m and 1.55{micro}m telecommunications optoelectronic devices grown on GaAs substrates. Nitride-Arsenide materials were grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen were determined using the emission spectrum of the plasma. Under constant plasma source conditions and varying group III flux, the nitrogen concentration in the film is inversely proportional to the group III flux (i.e., the nitrogen sticking coefficient is unity). The relationship between nitrogen concentration in the film and lattice parameter of the film is not linear for nitrogen concentrations above 2.9 mole % GaN, indicating that some nitrogen is incorporated on other locations than the group V lattice sites. For films with these higher nitrogen concentrations, XPS indicates that the nitrogen exists in two configurations: a Gallium-Nitrogen bond and another type of nitrogen complex in which nitrogen is less strongly bonded to Gallium atoms. Annealing removes this nitrogen complex and allows some of the nitrogen to diffuse out of the film. Annealing also improves the crystal quality of GaAsN quantum wells.

  11. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  12. Construction and test of a detector plane with gallium arsenide sensor; Aufbau und Test einer Detektorebene mit Galliumarsenidsensor

    Energy Technology Data Exchange (ETDEWEB)

    Kollowa, Sandro

    2012-05-15

    Aim of this thesis was the construction and test of a detector plane with gallium arsenide as sensor for the BeamCal. The front-end-ASICSs (ASIC=Application Specific Integrated Circuit) are first prototype for the readout electronics both for BeamCal and for LumiCal.

  13. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.

    2001-01-01

    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  14. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide : Design and simulation

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2016-01-01

    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and

  15. Studies on Separation Process and Production Technology of Boron Isotope

    OpenAIRE

    LI Jian-ping

    2014-01-01

    The boron isotopes separation test was performed by chemical exchange reaction in the benzene ether -three boron fluoride system, which resulted to the boron isotopic enrichment of -10 in the liquid phase, the boron isotopic enrichment of -11 in the gas phase. After then, boron isotope separation trial production has been finished. In this process, the exchange column and complex tower normal operating parameters and the complex tower technology have been obtained, the problems of material di...

  16. Composite boron nitride neutron detectors

    Science.gov (United States)

    Roth, M.; Mojaev, E.; Khakhan, O.; Fleider, A.; Dul`kin, E.; Schieber, M.

    2014-09-01

    Single phase polycrystalline hexagonal boron nitride (BN) or mixed with boron carbide (BxC) embedded in an insulating polymeric matrix acting as a binder and forming a composite material as well as pure submicron size polycrystalline BN has been tested as a thermal neutron converter in a multilayer thermal neutron detector design. Metal sheet electrodes were covered with 20-50 μm thick layers of composite materials and assembled in a multi-layer sandwich configuration. High voltage was applied to the metal electrodes to create an interspacing electric field. The spacing volume could be filled with air, nitrogen or argon. Thermal neutrons were captured in converter layers due to the presence of the 10B isotope. The resulting nuclear reaction produced α-particles and 7Li ions which ionized the gas in the spacing volume. Electron-ion pairs were collected by the field to create an electrical signal proportional to the intensity of the neutron source. The detection efficiency of the multilayer neutron detectors is found to increase with the number of active converter layers. Pixel structures of such neutron detectors necessary for imaging applications and incorporation of internal moderator materials for field measurements of fast neutron flux intensities are discussed as well.

  17. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  18. Density separation of boron particles. Final report

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-04-01

    A density distribution much broader than expected was observed in lots of natural boron powder supplied by two different sources. The material in both lots was found to have a rhombohedral crystal structure, and the only other parameters which seemed to account for such a distribution were impurities within the crystal structure and varying isotopic ratios. A separation technique was established to isolate boron particles in narrow densty ranges. The isolated fractions were subsequently analyzed for B 10 and total boron content in an effort to determine whether selective isotopic enrichment and nonhomogeneous impurity distribution were the causes for the broad density distribution of the boron powders. It was found that although the B 10 content remained nearly constant around 18%, the total boron content varied from 37.5 to 98.7%. One of the lots also was found to contain an apparently high level of alpha rhombohedral boron which broadened the density distribution considerably. During this work, a capability for removing boron particles containing gross amounts of impurities and, thereby, improving the overall purity of the remaining material was developed. In addition, the separation technique used in this study apparently isolated particles with alpha and beta rhombohedral crystal structures, although the only supporting evidence is density data

  19. Proceedings of workshop on 'Boron Chemistry and Boron Neutron Capture Therapy'

    International Nuclear Information System (INIS)

    Kitaoka, Y.

    1991-07-01

    This volume contains the proceedings of the 3rd Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 12, in 1991. In this workshop, our attention was focused on the chemical nature of boron compounds and the boron neutron capture therapy (BNCT). First, clinical experiences of BNCT in KURRI in 1990 and 1991 were reported (Chap. 3). The feasibility of the gadolinium neutron capture therapy for brain tumors was discussed (Chap. 4). In the chemical field, a rapid spectrophotometric determination of trace amounts of borons in biological samples is described (Chap. 5). The chemical behaviours of p-boronophenylalanine and its analogs in aqueous solutions were investigated by a paper electrophoresis and infrared spectroscopy (Chap. 6). On the molecular design and synthesis of new boron carriers for BNCT, several new synthetic methods for B-10 containing nucleoside derivatives were shown (Chap. 7). (author)

  20. Electrical and thermal conductivities of the graphene, boron nitride and silicon boron honeycomb monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Khodadadi, Jabbar [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Moradi Kurdestany, Jamshid [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65201 (United States); Yarmohammadi, Zahra [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2016-11-25

    Density of states, electrical and thermal conductivities of electrons in graphene, boron nitride and silicon boron single sheets are studied within the tight-binding Hamiltonian model and Green's function formalism, based on the linear response theory. The results show that while boron nitride keeps significantly the lowest amounts overall with an interval of zero value in low temperatures, due to its insulating nature, graphene exhibits the most electrical and thermal conductivities, slightly higher than silicon boron except for low temperature region where the latter surpasses, owing to its metallic character. This work might make ideas for creating new electronic devices based on honeycomb nanostructures. - Highlights: • Electronic properties of graphene, silicon boron, and boron nitride planes are compared. • Tight-binding Hamiltonian model and Green's function formalism are implemented. • This work might make ideas for creating new electronic devices based on honeycomb nanostructures.

  1. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

    1978-09-01

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  2. Quantitative boron detection by neutron transmission method

    International Nuclear Information System (INIS)

    Okka, M.; Genceli, M.; Eren, E.; Bayulken, A.

    2008-01-01

    //Quantitative boron detection is mainly performed by chemical methods like colorimetric titration. High neutron absorption cross section of natural boron makes attractive its detection by absorption measurements. This work is an extension of earlier investigations where neutron radiography technique was used for boron detection. In the present investigation, the neutron absorption rate of boron containing solutions is the way to measure quantitatively the boron content of the solutions. The investigation was carried out in Istanbul TRIGA Mark-II reactor. In the end of the experiments, it was observed that even |ppw| grade boron in aqueous solution can be easily detected. The use of this method is certainly very useful for boron utilizing industries like glass and steel industries.The major disadvantage of the method is the obligation to use always aqueous solutions to be able to detect homogeneously the boron content. Then, steel or glass samples have to be put first in an appropriate solution form. The irradiation of steel samples can give the distribution of boron by the help of a imaging and this suggested method will give its quantitative measurement. The superiority of this method are its quick response time and its accuracy. To test this accuracy, a supposed unknown , solution of boric acid is irradiated and then calculated by the help of the calibration curve. The measured value of boric acid was 0.89 mg and the calculated value was found to be 0.98 mg which gives an accuracy of 10 %. It was also seen that the method is more accurate for low concentration. (authors)

  3. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Keru, Godfrey; Ndungu, Patrick G.; Nyamori, Vincent O., E-mail: nyamori@ukzn.ac.za

    2015-03-01

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes.

  4. Boron Isotope Fractionation in Bell Pepper

    OpenAIRE

    Geilert, Sonja; Vogl, Jochen; Rosner, Martin; Voerkelius, Susanne; Eichert, Thomas

    2015-01-01

    Various plant compartments of a single bell pepper plant were studied to verify the variability of boron isotope composition in plants and to identify possible intra-plant isotope fractionation. Boron mass fractions varied from 9.8 mg/kg in the fruits to 70.0 mg/kg in the leaves. Boron (B) isotope ratios reported as δ11B ranged from -11.0‰ to +16.0‰ (U ≤ 1.9‰, k=2) and showed a distinct trend to heavier δ11B values the higher the plant compartments were located in the plant. A fractionatio...

  5. Study on plasma sprayed boron carbide coating

    Science.gov (United States)

    Zeng, Yi; Lee, Soo W.; Ding, Chuanxian

    2002-03-01

    The microstructure, phase composition, and mechanical properties of boron carbide coatings formed by atmospheric plasma spraying (APS) are studied in the present work. The boron carbide coating with high microhardness and low porosity could be produced by APS. The decomposition of boron carbide powder during the plasma spray process would result in the formation of the BxC phase and an increase of the carbon phase, which is confirmed by transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction results.

  6. Characterization of boron tolerant bacteria isolated from a fly ash dumping site for bacterial boron remediation.

    Science.gov (United States)

    Edward Raja, Chellaiah; Omine, Kiyoshi

    2013-08-01

    Boron is an essential micronutrient for plants, but can above certain concentrations be toxic to living organisms. A major environmental concern is the removal of boron from contaminated water and fly ash. For this purpose, the samples were collected from a fly ash dumping site, Nagasaki prefecture, Japan. The chemical characteristics and heavy metal concentration of the samples were performed by X-ray fluorescent analysis and leaching test. For bacterial analysis, samples were collected in sterile plastic sheets and isolation was carried out by serial dilution method. The boron tolerant isolates that showed values of maximum inhibitory concentration toward boron ranging from 100 to 260 mM level were screened. Based on 16S rRNA sequencing and phylogenetic analysis, the isolates were most closely related to the genera Bacillus, Lysinibacillus, Microbacterium and Ralstonia. The boron tolerance of these strains was also associated with resistant to several heavy metals, such as As (III), Cr (VI), Cd, Cu, Pb, Ni, Se (III) and Zn. Indeed, these strains were arsenic oxidizing bacteria confirmed by silver nitrate test. These strains exhibited their salt resistances ranging from 4 to 15 % were determined in Trypticase soy agar medium. The boron tolerant strains were capable of removing 0.1-2.0 and 2.7-3.7 mg l(-1) boron from the medium and fly ash at 168 h. Thus, we have successfully identified the boron tolerant and removal bacteria from a fly ash dumping site for boron remediation.

  7. Characterization of solar cells for space applications. Volume 13: Electrical characteristics of Hughes LPE gallium arsenide solar cells as a function of intensity and temperature

    Science.gov (United States)

    Anspaugh, B. E.; Beckert, D. M.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

    1980-01-01

    Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.

  8. Boron Doped Graphene 3-Dimensi untuk Superkapasitor Kapasitas Tinggi

    Directory of Open Access Journals (Sweden)

    Nurlia Pramita Sari

    2017-08-01

    Full Text Available Chemical doping is an effective approach to improve the property of carbon material. In this study boron doped graphene with 3D structure used as the electrode was investigated. Boron doped graphene was prepared through freeze-dried process followed by pyrolysis of graphene oxide (GO with three types of chemical substances; boron oxide, boric acid, and boron powder in an argon and hydrogen atmosphere at 1000 C for 3 hours. The difference of chemical composition generated a different percentage of boron bond with GO. The results shows that the highest electrochemical performance was found in graphene samples with the addition of boric acid (BA 86 F/g, followed by boron oxide (BO 59.2 F/g, and boron powder (BP 2 F/g. It can be caused by boron concentration bound with graphene. The higher concentration of boron could be increased the electrochemical performance due to better of ion movement.

  9. Breaking the icosahedra in boron carbide.

    Science.gov (United States)

    Xie, Kelvin Y; An, Qi; Sato, Takanori; Breen, Andrew J; Ringer, Simon P; Goddard, William A; Cairney, Julie M; Hemker, Kevin J

    2016-10-25

    Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials.

  10. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    Gainer, G.M.

    1993-01-01

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  11. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  12. Boron precipitates in ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.; Washburn, J.

    1975-03-01

    Long rod-like defects are observed in ion implanted silicon when boron is present either as a prior dopant addition or as the implanted species. Results of recent work indicates that these defects have the characteristics of narrow extrinsic dipoles or elongated dislocation loops and that there are two different types along each of the six (110) directions. An annealing kinetics method has been used to identify the nature of these defects formed during post-implantation annealing in boron ion (100 keV) implanted silicon irradiated at room temperature to a dose of 2 x 10 14 /cm 2 . It is concluded that at least two different kinds of rod-like defects exist in boron ion implanted silicon. From the activation energy for shrinkage, it is also concluded that one type (anti A) is composed largely of boron atoms. (U.S.)

  13. Spectromicroscopy in Boron Neutron Capture Therapy Research

    Science.gov (United States)

    Gilbert, Benjamin; Redondo, Jose; Andres, Roger; Suda, Takashi; Neumann, Michael; Steen, Steffi; Gabel, Detlef; Mercanti, Delio; Ciotti, Teresa; Perfetti, Paolo; Margaritondo, Giorgio; de Stasio, Gelsomina

    1998-03-01

    The MEPHISTO synchrotron imaging spectromicroscope can analyse ashed cells or tissue sections to reveal the microdistribution of trace elements. MEPHISTO performs core level x-ray absorption spectroscopy with synchrotron radiation, and uses an electron optics system to provide magnified photoelectron images. An application of the MEPHISTO spectromicroscope is in boron neutron capture therapy (BNCT). BNCT is a binary cancer therapy that will selectively destroy cancer cells provided that compounds containing a boron isotope are selectively accumulated in tumor tissue. Important factors for the success of BNCT include the ability to target every cancer cell, and the distribution of boron inside the cell. To investigate the boron distribution in tissue, sections of human glioblastoma containing a BNCT compound, and stained with nickel against a protein found in the nuclei of proliferating (cancer) cells, were studied with MEPHISTO.

  14. Behaviour of boron in Mandovi estuary (Goa)

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Anand, S.P.

    and alkalinity gave positive correlations with a linear variation. Though the overall behavioural pattern of boron indicated non-conservative nature, it showed a quasi-conservative character during premonsoon and a non-conservative during rest of the seasons...

  15. Boron

    Science.gov (United States)

    ... feeding women over 19 years of age. For adolescents 14 to 18 years of age and pregnant or breast-feeding women 14 to 18 years of age, the ... be expected, is 17 mg per day for adolescents 14 to 18 years of age and pregnant or breast-feeding women 14 to 18 years of age. For ...

  16. Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

    Science.gov (United States)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater

  17. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

    Science.gov (United States)

    Gaddy, Edward M.

    1995-01-01

    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  18. A Study of Hydrogen Anion Substitution in 1111-type Iron Arsenides

    Science.gov (United States)

    Hosono, Hideo

    2014-03-01

    Hydrogen is the simplest bipolar element and its valence state can be controlled from +1 to -1. We have synthesized the 1111-type iron arsenides CaFeAsH and LnFeAsO1 -xHx (Ln = lanthanide; 0 neutron diffraction and density functional theory calculations. The close similarity in the structural and electrical properties of CaFeAsH and CaFeAsF indicated the formation of the hydride ion (H -) , which is isovalent with the fluoride ion (F -) , in the 1111-type iron arsenides. When some of the O2 - ions in LnFeAsO are replaced by H -, superconductivity is induced by electron doping to the FeAs-layer to maintain charge neutrality. Since the substitution limit of hydrogen in LnFeAsO (x ~ 0.5) is much higher than that of fluorine (x ~ 0.2), the hydrogen substitution technique provides an effective pathway for high-density electron-doping, making it possible to draw the complete electronic phase diagram of LnFeAsO. The x-T diagrams of LnFeAsO1-xHx (Ln = La, Ce, Sm, Gd) have a wide superconducting (SC) region spanning the range x = 0.04 to 0.4, which is far from the parent antiferromagnetic region near x = 0.0. For LaFeAsO1-xHx, another SC dome region was found in the range x = ~ 0.2 to ~ 0.5 with a maximum Tc = 36 K, in addition to a conventional SC dome located at x ~ 0.08 with maximum Tc = 29 K. Density functional theory calculations performed for LaFeAsO1-xHx using virtual crystal approximation indicated that the newly observed Tc is correlated with the appearance of degeneration of the Fe 3d bands (dxy, dyz and dzx), which is caused not only by regularization of the tetrahedral shape of FeAs4 due to chemical pressure effects but also by selective band occupation with doped electrons. Very recently, a new AFM phase was found around x =0.5, suggesting that the double dome Tc structure reflects the presence of two AFM phases at x =0 and 0,5. In this talk, I review the recent progress in superconductivity in 1111-type iron (oxy)arsenides and related compounds induced by

  19. Abrasive slurry composition for machining boron carbide

    Science.gov (United States)

    Duran, Edward L.

    1985-01-01

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  20. Boron-rich oligomers for BNCT

    International Nuclear Information System (INIS)

    Gula, M.; Perleberg, O.; Gabel, D.

    2000-01-01

    The synthesis of two BSH derivatives is described, which can be used for oligomerization in DNA-synthesizers. Synthesis pathways lead to final products in five and six steps, respectively. Because of chirality interesting results were expected. NMR-measurements confirm this expectation. Possible oligomers with high concentrations of boron can be attached to biomolecules. These oligomers can be explored with several imaging methods (EELS, PEM) to determine the lower detection limit of boron with these methods. (author)

  1. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

    1991-05-01

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  2. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  3. Gallium arsenide quantum well-based far infrared array radiometric imager

    Science.gov (United States)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  4. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    Science.gov (United States)

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  5. A I-V analysis of irradiated Gallium Arsenide solar cells

    Science.gov (United States)

    Heulenberg, A.; Maurer, R. H.; Kinnison, J. D.

    1991-01-01

    A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

  6. Gallium arsenide solar cells-status and prospects for use in space

    Science.gov (United States)

    Brandhorst, H. W.; Flood, D.; Weinberg, I.

    1981-01-01

    Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

  7. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    Science.gov (United States)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  8. Ultraviolet Beam Focusing in Gallium Arsenide by Direct Excitation of Surface Plasmon Polaritons

    Directory of Open Access Journals (Sweden)

    Senfeng Lai

    2015-01-01

    Full Text Available This paper proposed that ultraviolet beam could be focused by gallium arsenide (GaAs through direct excitation of surface plasmon polaritons. Both theoretical analysis and computer simulation showed that GaAs could be a reasonably good plasmonic material in the air in the deep ultraviolet waveband. With a properly designed bull’s eye structure etched in GaAs, the ultraviolet electric field could be enhanced to as high as 20 times the incident value, and the full-width-half-maximum (FWHM of the light beam could be shrunk from ~48° to ~6°. As a plasmonic material, GaAs was compared to Ag and Al. Within the studied ultraviolet waveband, the field enhancement in GaAs was much stronger than Ag but not as high as Al.

  9. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

    Science.gov (United States)

    Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

    2015-06-11

    Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

  10. Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity.

    Science.gov (United States)

    Choi, Sangjo; Sarabandi, Kamal

    2013-12-10

    A novel high-impedance nanoantenna with an embedded matching network is implemented to realize a highly sensitive infrared detector. A bowtie antenna is operated at its antiparallel resonance and loaded with a small low-bandgap (E(g)=0.52  eV) indium gallium arsenide antimonide (InGaAsSb) p-n junction. The structure is optimized for maximum power transfer and significant field enhancement at its terminals for a desired frequency band where the maximum quantum efficiency of InGaAsSb is observed. The sensitivity improvement of the proposed detector is evaluated against the traditional bulk detector and it is shown that the detectivity is improved by the field enhancement factor, which is approximately 20 for the case considered here.

  11. Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

    Science.gov (United States)

    Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

    2018-02-01

    Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

  12. Two stream instability in n-type gallium arsenide semiconductor quantum plasma

    Science.gov (United States)

    Ghosh, S.; Muley, Apurva

    2018-01-01

    By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

  13. Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

    CSIR Research Space (South Africa)

    Ngoepe, PE

    2005-09-01

    Full Text Available studies of iron sulphide, platinum antimonide and platinum arsenide P.E. Ngoepea,b*, P.S. Ntoahaea, S.S. Mangwejanea, H.M. Sitholec, S.C. Parkerd, K.V. Wrighte and N.H. de Leeuwf Introduction Metal sulphide minerals are of industrial significance because...?S) 2.179 2.177 2.703 2.670 2.361 2.381 Me?X 2.269 2.262 2.678 2.642 2.468 2.495 Elastic constants (GPa) C11 352.6 366.0 265.8 266.0 341.9 355.5+ C44 101.7 105.0 59.17 59.05 97.80 84.93+ C12 47.91 47.00 67.87 68.00 74.10 49.60+ Bulk modulus (GPa) B 149...

  14. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  15. Real-time boronization in PBX-M using erosion of solid boronized targets

    International Nuclear Information System (INIS)

    Kugel, H.W.; Timberlake, J.; Bell, R.

    1994-01-01

    Thirty one real-time boronizations were applied to PBX-M using the plasma ablation of solid target probes. More than 17 g of boron was deposited in PBX-M using this technique. The probes were positioned at the edge plasma to optimize ablation and minimize spallation. Auger depth profile analysis of poloidal and toroidal deposition sample coupon arrays indicate that boron was transported by the plasma around the torus and deep into the divertors. During discharges with continuous real-time boronization, low-Z and high-Z impurities decreased rapidly as plasma surfaces were covered during the first 20--30 discharges. After boronization, a short-term improvement in plasma conditions persisted prior to significant boron erosion from plasma surfaces, and a longer term, but less significant, improvement persisted as boron farther from the edge continued gettering. Real-time solid target boronization has been found to be very effective for accelerating conditioning to new regimes and maintaining high performance plasma conditions

  16. The effect of boron deficiency on gene expression and boron compartmentalization in sugarbeet

    Science.gov (United States)

    NIP5, BOR1, NIP6, and WRKY6 genes were investigated for their role in boron deficiency in sugar beet, each with a proposed role in boron use in model plant species. All genes showed evidence of polymorphism in fragment size and gene expression in the target genomic DNA and cDNA libraries, with no co...

  17. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  18. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  19. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon

    Science.gov (United States)

    Torigoe, Kazuhisa; Ono, Toshiaki

    2017-06-01

    The enhanced diffusion of boron has been investigated by analyzing out-diffusion profiles in the vicinity of the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate with a resistivity of 8.2 mΩ cm and an oxide precipitate (O.P.) density of 108-1010 cm-3. It is found that the boron diffusion during annealing at 850-1000 °C is enhanced with the increase of the oxide precipitate density. On the basis of a model for boron diffusion mediated by silicon self-interstitials, we reveal that the enhanced diffusion is attributed to self-interstitials supersaturated as a result of the emission from oxide precipitates and the absorption by punched-out dislocations. In addition, the temperature dependence of the fraction of the self-interstitial emission obtained analyzing the diffusion enhancement well explains the morphology changes of oxide precipitates reported in literature.

  20. Boron-containing thioureas for neutron capture therapy

    International Nuclear Information System (INIS)

    Ketz, H.

    1993-01-01

    Melanin is produced in large amounts in malignant melanotic melanomas. Because thiourea compounds are covalently incorporated into melanin during its biosynthesis, the preparation of boronated thiourea-derivatives is of particular interest for the BNCT (Boron Neutron Capture Therapy). Accumulation of boron in tumors by means of boronated thiourea-derivatives may therefore provide levels of 10 B which are useful for BNCT. In BNCT the tumor containing the boron compound is irradiated with epithermal neutrons to generate He- and Li-nuclei from the 10 B which can then destroy the tumor cells. Because of the short ranges of these particles (approximately one cell diameter) the damage will be almost exclusively confined to the tumor leaving normal tissue unharmed. High accumulation of 2-mercapto-1-methylimidazole (methimazole) in melanotic melanomas has been described in the literature. Boronated derivatives of methimazole were therefore synthesized. Boron was in the form of a boronic acid, a nido-carbonate and a mercaptoundeca hydro-closo-dodecaborate (BSH). The synthesis of the boron cluster derivatives of methimazole (nido-carborate- and BSH-derivatives) with 9 resp. 12 boron atoms in the molecule were expected to achieve higher concentrations of boron in the tumor than in the case of the boronic acid compound with its single boron atom. (orig.) [de

  1. Atmospheric contribution to boron enrichment in aboveground wheat tissues.

    Science.gov (United States)

    Wang, Cheng; Ji, Junfeng; Chen, Mindong; Zhong, Cong; Yang, Zhongfang; Browne, Patrick

    2017-05-01

    Boron is an essential trace element for all organisms and has both beneficial and harmful biological functions. A particular amount of boron is discharged into the environment every year because of industrial activities; however, the effects of environmental boron emissions on boron accumulation in cereals has not yet been estimated. The present study characterized the accumulation of boron in wheat under different ecological conditions in the Yangtze River Delta (YRD) area. This study aimed to estimate the effects of atmospheric boron that is associated with industrial activities on boron accumulation in wheat. The results showed that the concentrations of boron in aboveground wheat tissues from the highly industrialized region were significantly higher than those from the agriculture-dominated region, even though there was no significant difference in boron content in soils. Using the model based on the translocation coefficients of boron in the soil-wheat system, we estimated that the contribution of atmosphere to boron accumulation in wheat straw in the highly industrialized region exceeded that in the agriculture-dominated region by 36%. In addition, from the environmental implication of the model, it was estimated that the development of boron-utilizing industries had elevated the concentration of boron in aboveground wheat tissues by 28-53%. Copyright © 2017 Elsevier Ltd. All rights reserved.

  2. 15th International Conference on Boron Chemistry (IMEBORON XV)

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil

    2015-01-01

    Roč. 87, č. 2 (2015), s. 121 ISSN 0033-4545 Institutional support: RVO:61388980 Keywords : boranes * boron * boron materials * carboranes * IMEBORON XV * medicinal chemistry Subject RIV: CA - Inorganic Chemistry

  3. Removal of boron from aqueous solution using cryptocrystalline magnesite

    CSIR Research Space (South Africa)

    Masindi, Vhahangwele

    2016-05-01

    Full Text Available The present study aimed to evaluate the efficiency of using cryptocrystalline magnesite to remove boron ions from aqueous systems. Batch experimental protocols were used to evaluate the adsorption capacity of magnesite for boron. Parameters...

  4. Boron: out of the sky and onto the ground

    International Nuclear Information System (INIS)

    Kuehl, D.K.

    1975-01-01

    Now an accepted, engineered material for aerospace applications, boron is taking its place on the ground. Both current production applications, prototype (development) applications, and speculative applications abound. In the leisure product market, boron epoxy or boron aluminum has been used or tried in golf clubs (in combination with graphite epoxy or to reinforce aluminum or steel), in tennis racquets, in bicycles, racing shells, skis and skipoles, bows and arrows, and others. In the industrial area, boron has been used to reduce fatigue, increase stiffness, or for its abrasive properties. Textile machinery, honing tools, and cut off wheels or saws are among the applications. In the medical field, prosthetics and orthotic braces, wheel chairs, canes, and crutches are all good applications for boron. Applications for boron in transportation, construction, and heavy industry are also possible. The volume of boron used in these applications could have a major impact on prices, making boron composite parts cost competitive with conventional materials. (U.S.)

  5. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  6. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  7. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  8. Impact scenarios in boron carbide: A computational study

    OpenAIRE

    Bell, R. G.; Sugden, I. J.; Plant, D. F.

    2016-01-01

    The effect of radiative impacts on the structure of boron carbide has been studied by both classical and ab initio simulations. As a part of this study, a new forcefield was developed for use in studying boron carbide materials. Impact scenarios in boron carbide were simulated in order to investigate the exceptional resistance of this material, and other icosahedral boron solids, to high-energy impact events. It was observed that interstitial defects created by radiative impacts are likely to...

  9. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    Aldabergenov, M.K.; Balakaeva, T.G.

    1995-01-01

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P 2 O 5 ) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  10. Determination of free carbon content in boron carbide ceramic powders

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Lima, N.B. de; Paschoal, J.O.A.

    1990-01-01

    Boron carbide is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Free carbon is always found as a process dependent impurity in boron carbide. The development of procedures for its detection is required because its presence leads to a degradation of the boron carbide properties. In this work, several procedures for determining free carbon content in boron carbide specimens are reported and discussed for comparison purposes. (author) [pt

  11. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  12. Boron-Loaded Silicone Rubber Scintillators

    CERN Document Server

    Bell, Z W; Maya, L; Sloop, F V J

    2003-01-01

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon respons...

  13. Hot ductility behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; Cabrera, J.M.

    2007-01-01

    The current study analyses the influence of boron contents (between 29 and 105 ppm) on the hot ductility of boron microalloyed steels. For this purpose, hot tensile tests were carried out at different temperatures (700, 800, 900 and 1000 deg. C) at a constant true strain rate of 0.001 s -1 . In general, results revealed an improvement of the hot ductility of steels at increasing boron content. At 700, 900 and 1000 deg. C the ductility is higher than at 800 deg. C, where boron microalloyed steels exhibit a region of ductility loss (trough region). Likewise, dynamic recrystallization only occurred at 900 and 1000 deg. C. The fracture surfaces of the tested steels at temperatures giving the high temperature ductility regime show that the fracture mode is a result of ductile failure, whereas it is ductile-brittle failure in the trough region. Results are discussed in terms of dynamic recrystallization and boron segregation towards austenite grain boundaries, which may retard the formation of pro-eutectoid ferrite and increase grain boundary cohesion

  14. Update on human health effects of boron.

    Science.gov (United States)

    Nielsen, Forrest H

    2014-10-01

    In vitro, animal, and human experiments have shown that boron is a bioactive element in nutritional amounts that beneficially affects bone growth and central nervous system function, alleviates arthritic symptoms, facilitates hormone action and is associated with a reduced risk for some types of cancer. The diverse effects of boron suggest that it influences the formation and/or activity of substances that are involved in numerous biochemical processes. Several findings suggest that this influence is through the formation of boroesters in biomolecules containing cis-hydroxyl groups. These biomolecules include those that contain ribose (e.g., S-adenosylmethionine, diadenosine phosphates, and nicotinamide adenine dinucleotide). In addition, boron may form boroester complexes with phosphoinositides, glycoproteins, and glycolipids that affect cell membrane integrity and function. Both animal and human data indicate that an intake of less than 1.0mg/day inhibits the health benefits of boron. Dietary surveys indicate such an intake is not rare. Thus, increasing boron intake by consuming a diet rich in fruits, vegetables, nuts and pulses should be recognized as a reasonable dietary recommendation to enhance health and well-being. Published by Elsevier GmbH.

  15. Oral co-administration of α-lipoic acid, quercetin and captopril prevents gallium arsenide toxicity in rats.

    Science.gov (United States)

    Bhatt, Kapil; Flora, S J S

    2009-07-01

    Gallium arsenide (GaAs), an inter-metallic semiconductor, known to exhibit superior optical and electronic properties compared to silicon, promotes its use in semiconductor industries. Extensive use of GaAs will inevitably lead to an increase in the exposure of workers manufacturing these products. Antioxidants are exogenous or endogenous compounds acting in several ways, including scavenging reactive oxygen species (ROS) or their precursors, inhibiting ROS formation, and binding metal ions needed for the catalysis of ROS generation. In the present study we investigated the protective efficacy of α-lipoic acid, quercetin and captopril individually against gallium arsenide exposure. Co-administration of α-lipoic acid with GaAs was most effective in reducing GaAs induced inhibition of blood δ-aminolevulinic acid dehydratase (ALAD) activity, liver, kidney and brain reduced glutathione (GSH) level and elevation of oxidized glutathione (GSSG). Captopril, on the other hand was effective in reducing thiobarbituric acid reactive substance (TBARS) levels, while quercetin reduced ROS in liver and kidney. The results suggest comparatively better preventive efficacy of concomitant α-lipoic acid administration during Gallium arsenide exposure compared to quercetin and captopril in preventing GaAs induced oxidative stress. Copyright © 2009 Elsevier B.V. All rights reserved.

  16. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2010-01-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  17. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    Kitaoka, Yoshinori

    1992-09-01

    This volume contains the proceedings of the 4th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 24 in 1992. First, clinical experiences of BNCT in the Kyoto University Research Reactor in 1992 were briefly reported. Then, the killing effects of boron cluster-containing nucleic acid precursors on tumor cells were shown (Chap. 2). The various trials of the optical resolution of B-p-boronophenylalanine for neutron capture therapy were made (Chap. 3). The borate-dextran gel complexes were investigated by the nuclear magnetic resonance spectroscopy. The stability constants of borate complexes were listed, and are useful in the solution chemistry of boron compounds (Chap. 4). The interactions between boron compounds and biological materials were studied by the paper electrophoresis which had been developed by us (Chap. 5). Molecular design of boron-10 carriers and their organic synthesis were reported (Chap. 6). Carborane-containing aziridine boron carriers which were directed to the DNA alkylation were synthesized and their cancer cell killing efficacies were tested (Chap. 7). The solution chemistry of deuterium oxide which is a good neutron moderator was reported, relating to the BNCT (Chap. 8). (author)

  18. Simulating the effect of boron doping in superconducting carbon

    Science.gov (United States)

    Sakai, Yuki; Chelikowsky, James R.; Cohen, Marvin L.

    2018-02-01

    We examine the effect of boron doping in superconducting forms of amorphous carbon. By judiciously optimizing boron substitutional sites in simulated amorphous carbon, we predict a superconducting transition temperature near 37 K at 14% boron concentration. Our findings have direct implications for understanding the recently discovered high-Tc superconductivity in Q-carbon.

  19. Effects of dietary boron on performance, egg production, egg quality ...

    African Journals Online (AJOL)

    engin

    Body weight was not affected by dietary boron supplementation at 16 and 40 weeks of age. ... and human nutrition. In bone metabolism, boron interacts with Ca, vitamin D and Mg (Chapin et al., 1998). In animals and plants, boron affects at least 26 enzymes involved in substrate metabolism, insulin release, oxidation and.

  20. Mesoscale Modeling of Dynamic Compression of Boron Carbide Polycrystals

    Science.gov (United States)

    2013-05-01

    occurs in ballistic impact, and accompanies amorphization in diamond anvil cell (DAC) experiments (Yan et al., 2009). Fracture in boron carbide ...Mesoscale Modeling of Dynamic Compression of Boron Carbide Polycrystals by J. D. Clayton ARL-RP-440 May 2013...Ground, MD 21005-5069 ARL-RP-440 May 2013 Mesoscale Modeling of Dynamic Compression of Boron Carbide Polycrystals J. D. Clayton

  1. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    Directory of Open Access Journals (Sweden)

    Yuya Egawa

    2014-02-01

    Full Text Available In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conjugated azobenzenes have been synthesized. There are several types of boronic acid azobenzenes, and their characteristics tend to rely on the substitute position of the boronic acid moiety. For example, o-substitution of boronic acid to the azo group gives the advantage of a significant color change upon sugar addition. Nitrogen-15 Nuclear Magnetic Resonance (NMR studies clearly show a signaling mechanism based on the formation and cleavage of the B–N dative bond between boronic acid and azo moieties in the dye. Some boronic acid-substituted azobenzenes were attached to a polymer or utilized for supramolecular chemistry to produce glucose-selective binding, in which two boronic acid moieties cooperatively bind one glucose molecule. In addition, boronic acid-substituted azobenzenes have been applied not only for glucose monitoring, but also for the sensing of glycated hemoglobin and dopamine.

  2. Screening of Wheat Genotypes for Boron Efficiency in Bangladesh

    Science.gov (United States)

    A number of Bangladeshi wheat genotypes (varieties and advanced lines) have been tested for boron efficiency through sand culture experiments over two years (2007-08 & 2008-09) against two Thai check varieties ‘Fang 60’ (boron efficient) and ‘SW41’ (boron inefficient). Performances of the genotypes ...

  3. Dietary boron: possible roles in human and animal physiology

    Science.gov (United States)

    Boron is a bioactive element of low molecular weight. Since discovery of the first boron biomolecule, boromycin, in 1967, several other similar biomolecules are now well-characterized. Most recently described was a bacterial cell-to-cell communication signal that requires boron, autoinducer-II. Boro...

  4. Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

    Science.gov (United States)

    Halverson, Danny C.; Landingham, Richard L.

    1988-01-01

    A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

  5. Biological evaluation of boronated unnatural amino acids as new boron carriers

    Energy Technology Data Exchange (ETDEWEB)

    Kabalka, G.W. [Departments of Radiology and Chemistry, University of Tennessee, Knoxville, TN (United States)], E-mail: kabalka@utk.edu; Yao, M.-L.; Marepally, S.R. [Departments of Radiology and Chemistry, University of Tennessee, Knoxville, TN (United States); Chandra, S. [Cornell SIMS Laboratory, Department of Earth and Atmospheric Sciences, Snee Hall, Cornell University, Ithaca, NY (United States)

    2009-07-15

    There is a pressing need for new and more efficient boron delivery agents to tumor cells for use in boron neutron capture therapy (BNCT). A class of boronated unnatural cyclic amino acids has demonstrated a remarkable selectivity toward tumors in animal and cell culture models, far superior to currently used agents in clinical BNCT. One of these amino acids, 1-amino-3-boronocyclopentanecarboxylic acid (ABCPC), has shown a tumor to blood ratio of 8 and a tumor to normal brain ratio of nearly 21 in a melanoma bearing mouse model. This work represents further biological characterization of this compound for tumor targeting in an EMT6 murine mammary carcinoma mouse model and a T98G human glioblastoma cell line. Female BALB/c mice bearing EMT6 tumors were injected with the fructose complex form of racemic mixtures of cis and trans isomers of ABCPC in identical concentrations. Boron concentrations were measured in the tumor, blood, brain, skin, and liver tissues at 1, 3, and 5 h post-injection. These observations revealed a remarkable difference in racemic mixtures of cis and trans isomers in tumor targeting by boron. This implies that further separation of the L and D forms of this compound may enhance tumor targeting to an even higher degree than that provided by the racemic mixtures. Since the uptake measurements were made in homogenized tumor and normal tissues, little is known about the subcellular location of the boron arising from the various isomeric forms of the amino acid. To study subcellular delivery of boron from ABCPC in T98G human glioblastoma cells, we employed secondary ion mass spectrometry (SIMS) based technique of ion microscopy, which is capable of quantitatively imaging isotopic (elemental) gradients in cells and tissues at 500 nm spatial resolution. The T98G cells were exposed to the nutrient medium containing 100 ppm boron equivalent of a mixture of both L and D isomers of ABCPC in the form of a fructose complex for 1 h. Following this treatment

  6. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

    1991-09-01

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  7. Biological Evaluation of Boronated Unnatural Amino Acids as New Boron Carriers

    Science.gov (United States)

    Kabalka, G.W.; Yao, M.-L.; Marepally, S.R.; Chandra, S.

    2010-01-01

    There is a pressing need for new and more efficient boron delivery agents to tumor cells for use in boron neutron capture therapy (BNCT). A class of boronated unnatural cyclic amino acids has demonstrated a remarkable selectivity toward tumors in animal and cell culture models, far superior to currently used agents in clinical BNCT. One of these amino acids, 1-amino-3-boronocyclopentanecarboxylic acid (ABCPC), has shown a tumor to blood ratio of 8 and a tumor to normal brain ratio of nearly 21 in a melanoma bearing mouse model. This work represents further biological characterization of this compound for tumor targeting in an EMT6 murine mammary carcinoma mouse model and a T98G human glioblastoma cell line. Female BALB/c mice bearing EMT6 tumors were injected with the fructose complex form of racemic mixtures of cis- and trans isomers of ABCPC in identical concentrations. Boron concentrations were measured in the tumor, blood, brain, skin, and liver tissues at 1, 3, and 5 hr post injection. These observations revealed a remarkable difference in racemic mixtures of cis and trans isomers in tumor targeting by boron. This implies that further separation of the L and D forms of this compound may enhance tumor targeting to an even higher degree than that provided by the racemic mixtures. Since the uptake measurements were made in homogenized tumor and normal tissues, little is known about the subcellular location of the boron arising from the various isomeric forms of the amino acid. To study subcellular delivery of boron from ABCPC in T98G human glioblastoma cells, we employed secondary ion mass spectrometry (SIMS) based technique of ion microscopy, which is capable of quantitatively imaging isotopic (elemental) gradients in cells and tissues at 500 nm spatial resolution. The T98G cells were exposed to the nutrient medium containing 100 ppm boron equivalent of a mixture of both L and D isomers of ABCPC in the form of a fructose complex for 1 hr. Following this

  8. Accelerator-driven boron neutron capture therapy

    Science.gov (United States)

    Edgecock, Rob

    2014-05-01

    Boron Neutron Capture Therapy is a binary treatment for certain types of cancer. It works by loading the cancerous cells with a boron-10 carrying compound. This isotope has a large cross-section for thermal neutrons, the reaction producing a lithium nucleus and alpha particle that kill the cell in which they are produced. Recent studies of the boron carrier compound indicate that the uptake process works best in particularly aggressive cancers. Most studied is glioblastoma multiforme and a trial using a combination of BNCT and X-ray radiotherapy has shown an increase of nearly a factor of two in mean survival over the state of the art. However, the main technical problem with BNCT remains producing a sufficient flux of neutrons for a reasonable treatment duration in a hospital environment. This paper discusses this issue.

  9. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  10. Structure of Boron Carbide: Where's the Carbon?

    Science.gov (United States)

    Marx, David; Seidler, Gerald; Fister, Timothy; Nagle, Kenneth; Segre, Carlo

    2008-03-01

    Although the structure of the boron carbide series, B12-xCx with 0.06 x x-ray scattering (LERIX) spectrometer on the PNC-CAT beamline at the Advanced Photon Source at Argonne National Lab has enabled differentiation of the boron and carbon absorption edge data for the various crystallographic sites. The structure (R-3m) consists of twelve-atom icosahedra and three-atom chains. Boron carbide may have a maximum of three carbon atoms, which may be located on the two end of chain sites and in one of two inequivalent sites on the icosahedra. At least one carbon atom must be present in the structure for it to be stable. In this presentation, structural results from non-resonant x-ray scattering for seven samples, ranging from B4C to B10.1C will be presented.

  11. On the Mechanism of Boron Ignition

    Science.gov (United States)

    Keil, D. G.; Dreizin, E. L.; Felder, W.; Vicenzi, E. P.

    1997-01-01

    Boron filaments were electrically heated in air and argon/oxygen mixtures while their resistance, temperature, and radiation at the wavelengths of BO and BO2 bands were monitored. The filaments 'burned' in two distinct stages. Samples of the filaments were quenched at different times before and during the burning and analyzed using electron microscopy. The beginning of the first stage combustion characterized by a local resistance minimum, a sharp spike in boron oxide radiation emission, and a rapid rise in temperature, occurred at 1500 +/- 70 deg. C, independent of pre-heating history and oxygen content (540%) in the gas environment. The data suggest that a phase transition occurs in the filaments at this temperature that triggers stage one combustion. Significant amounts of oxygen were found inside quenched filaments. Large spherical voids formed in the boron filaments during their second stage combustion which is interpreted to indicate a crucial role for the gas dissolution processes in the combustion scenario.

  12. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    NARCIS (Netherlands)

    Mohammadi, V.; Nihtianov, S.

    2016-01-01

    The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and

  13. Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2014-03-01

    Thermal boron diffusion into silicon from boron silicate glass (BSG) prepared by atmospheric pressure CVD (AP-CVD) has been investigated in terms of the BSG boron concentration dependence on diffusion mechanism for N-type solar cell applications. With thermal diffusion at 950 °C in N2 for 20 min, the sheet resistance of the boron-diffused layer decreases with BSG boron concentration up to approximately 4 × 1021 cm-3 at which a boron-rich layer (BRL) is formed at the surface. However, the resistance increases with BSG boron concentration when the BSG boron concentration is higher than 4 × 1021 cm-3. It is also confirmed that the diffusion depth decreases with increasing BSG boron concentration within this BSG concentration region. To clarify this mechanism, the BSG boron concentration dependence on boron diffusivity has also been studied. From extracted diffusivities, the anomalous diffusion can be explained by silicon interstitials formed owing to kick-out by diffused boron atoms and by silicon interstitial generation-degradation due to BRL formation.

  14. Chemical and mechanical analysis of boron-rich boron carbide processed via spark plasma sintering

    Science.gov (United States)

    Munhollon, Tyler Lee

    Boron carbide is a material of choice for many industrial and specialty applications due to the exceptional properties it exhibits such as high hardness, chemical inertness, low specific gravity, high neutron cross section and more. The combination of high hardness and low specific gravity makes it especially attractive for high pressure/high strain rate applications. However, boron carbide exhibits anomalous behavior when high pressures are applied. Impact pressures over the Hugoniot elastic limit result in catastrophic failure of the material. This failure has been linked to amorphization in cleavage planes and loss of shear strength. Atomistic modeling has suggested boron-rich boron carbide (B13C2) may be a better performing material than the commonly used B4C due to the elimination of amorphization and an increase in shear strength. Therefore, a clear experimental understanding of the factors that lead to the degradation of mechanical properties as well as the effects of chemistry changes in boron carbide is needed. For this reason, the goal of this thesis was to produce high purity boron carbide with varying stoichiometries for chemical and mechanical property characterization. Utilizing rapid carbothermal reduction and pressure assisted sintering, dense boron carbides with varying stoichiometries were produced. Microstructural characteristics such as impurity inclusions, porosity and grain size were controlled. The chemistry and common static mechanical properties that are of importance to superhard materials including elastic moduli, hardness and fracture toughness of the resulting boron-rich boron carbides were characterized. A series of six boron carbide samples were processed with varying amounts of amorphous boron (up to 45 wt. % amorphous boron). Samples with greater than 40 wt.% boron additions were shown to exhibit abnormal sintering behavior, making it difficult to characterize these samples. Near theoretical densities were achieved in samples with

  15. Boron removal by electrocoagulation and recovery.

    Science.gov (United States)

    Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

    2014-03-15

    This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water. Copyright © 2013 Elsevier Ltd. All rights reserved.

  16. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  17. Thermal conductivity behavior of boron carbides

    Science.gov (United States)

    Wood, C.; Zoltan, A.; Emin, D.; Gray, P. E.

    1983-01-01

    Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

  18. Designing your boron-charging system

    International Nuclear Information System (INIS)

    Miller, J.

    1979-01-01

    High-pressure positive-displacement pumps used in the boron-charging setups of pressurized-water (PWR) nuclear plants because of their inherently high efficiencies over a wide range of pressures and speeds are described. Hydrogen-saturated water containing 4-12% boric acid is fed to the pump from a volume-control tank under a gas blanket. Complicated piping and the pulsation difficulties associated with reciprocating pumps make hydrogen-saturated boron-charging systems a challenge to the designer. The article describes the unusual hydraulics of the systems to help assure a trouble-free design

  19. Surface tension and contact angle of molten semiconductor compounds. II. gallium arsenide

    Science.gov (United States)

    Shetty, Rajaram; Balasubramanian, Raghuraman; Wilcox, William R.

    1990-02-01

    The surface tension and contact angle of molten GaAs were measured by the sessile drop technique. The dependence of surface tension and contact angle on temperature and on the deviations from stoichiometry was determined. A computer program was used to calculate the properties from the sessile drop profile. The wetting behavior of the melt was studied on the following surfaces: quartz, sandblasted quartz, carbon-coated quartz and pyrolytic boron nitride. The surface tension of molten GaAs decreased with increasing temperature, and decreased slightly with excess As. The degree of wetting increased in the following order: pyrolytic boron nitride, sandblasted quartz, carbon-coated quartz and plain quartz. The contact angle decreased with increasing temperature and seemed to decrease slightly with increasing As.

  20. Unveiling polytype transformation assisted growth mechanism in boron carbide nanowires

    Science.gov (United States)

    Song, Ningning; Li, Xiaodong

    2018-01-01

    We demonstrate direct evidence that the lattice distortion, induced by boron carbide (BxCy) stoichiometry, assists the growth of boron carbide nanowires. The transformation between different polytypic boron carbide phases lowers the energy barrier for boron diffusion, promoting boron migration in the nanowire growth. An atomistic mass transport model has been established to explain such volume-diffusion-induced nanowire growth which cannot be explained by the conventional surface diffusion model alone. These findings significantly advance our understanding of nanowire growth processes and mass transport mechanisms and provide new guidelines for the design of nanowire-structured devices.

  1. Model for calculating the boron concentration in PWR type reactors

    International Nuclear Information System (INIS)

    Reis Martins Junior, L.L. dos; Vanni, E.A.

    1986-01-01

    A PWR boron concentration model has been developed for use with RETRAN code. The concentration model calculates the boron mass balance in the primary circuit as the injected boron mixes and is transported through the same circuit. RETRAN control blocks are used to calculate the boron concentration in fluid volumes during steady-state and transient conditions. The boron reactivity worth is obtained from the core concentration and used in RETRAN point kinetics model. A FSAR type analysis of a Steam Line Break Accident in Angra I plant was selected to test the model and the results obtained indicate a sucessfull performance. (Author) [pt

  2. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  3. Removal properties of dissolved boron by glucomannan gel.

    Science.gov (United States)

    Oishi, Kyoko; Maehata, Yugo

    2013-04-01

    Boron ions have long been known to form complexes with the cis-diol group of a polysaccharide. Konjac glucomannan (KGM) which is one of polysaccharides was used to remove dissolved boron in this study. KGM forms a complex with boron, but does not remove boron from contaminated waters as well as other polysaccharides because of its high water solubility. Therefore, the removal efficiencies of dissolved boron were examined using both an insoluble KGM gel and KGM semi-gel. The former did not remove dissolved boron, but the latter did. The difference in the ability of boron removal was due to the presence of diol group inside. KGM loses free diol group during the process of gelation. On the other hand, the semi-gel gelated only surface layer in water has diol group inside. The boron removal capacity of the semi-gel was highest at pHs⩾11, when the boron species is present as B(OH)4(-). The capacity was slightly increased by the addition of Al, Ca and Mg under high pH conditions. This was due to co-precipitation of boron with Ca dissolved from the semi-gel. The boron adsorbed to the semi-gel easily was desorbed under low pH conditions and the hysteresis was not found. Copyright © 2012 Elsevier Ltd. All rights reserved.

  4. Determination of boron concentration in biopsy-sized tissue samples

    International Nuclear Information System (INIS)

    Hou, Yougjin; Fong, Katrina; Edwards, Benjamin; Autry-Conwell, Susan; Boggan, James

    2000-01-01

    Inductively coupled plasma mass spectrometry (ICP-MS) is the most sensitive analytical method for boron determination. However, because boron is volatile and ubiquitous in nature, low-concentration boron sample measurement remains a challenge. In this study, an improved ICP-MS method was developed for quantitation of tissue samples with low (less than 10 ppb) and high (100 ppb) boron concentrations. The addition of an ammonia-mannitol solution converts volatile boric acid to the non-volatile ammonium borate in the spray chamber and with the formation of a boron-mannitol complex, the boron memory effect and background are greatly reduced. This results in measurements that are more accurate, repeatable, and efficient. This improved analysis method has facilitated rapid and reliable tissue biodistribution analyses of newly developed boronated compounds for potential use in neutron capture therapy. (author)

  5. Boron carbide coating deposition on tungsten substrates from atomic fluxes of boron and carbon

    Science.gov (United States)

    Sadovskiy, Y.; Begrambekov, L.; Ayrapetov, A.; Gretskaya, I.; Grunin, A.; Dyachenko, M.; Puntakov, N.

    2016-09-01

    A device used for both coating deposition and material testing is presented in the paper. By using lock chambers, sputtering targets are easily exchanged with sample holder thus allowing testing of deposited samples with high power density electron or ion beams. Boron carbide coatings were deposited on tungsten samples. Methods of increasing coating adhesion are described in the paper. 2 μm boron carbide coatings sustained 450 heating cycles from 100 to 900 C. Ion beam tests have shown satisfactory results.

  6. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    Camillo, M.A.P.; Tomac Junior, U.

    1990-01-01

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na 2 10 B 12 H 11 SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author) [pt

  7. A colorimetric determination of boron in biological sample for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Camilo, M.A.P.; Tomac Junior, U.

    1989-01-01

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of gliomas and glioblastomas grade III and IV than other therapies. During the treatment of levels of Na 2 10 B 12 H 11 S H must be known in several compartments of the organism and with this purpose the method of colorimetric determination of boron using curcumin was established. This method is simples, reproducible and has adequate sensitivity for this control. (author). 7 refs, 3 figs, 1 tab

  8. Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter

    Energy Technology Data Exchange (ETDEWEB)

    Singha, Bandana; Solanki, Chetan Singh [Department of Energy Science and Technology, Indian Institute of Technology, Bombay Mumbai-400076, Maharashtra (India)

    2016-05-06

    Formation of boron skin is an unavoidable phenomenon in p-type emitter formation with boron dopant source. The boron skin thickness is generally less than 100 nm and difficult to remove by chemical and physical means. Low temperature oxidation (LTO) used in this work is useful in removing boron skin thickness up to 30 nm and improves the emitter performance. The effective minority carrier lifetime gets improved by more than 30% after using LTO and leakage current of the emitter gets lowered by 100 times thereby showing the importance of low temperature oxidation in boron spin on dopant diffused emitters.

  9. Boron exposure through drinking water during pregnancy and birth size.

    Science.gov (United States)

    Igra, Annachiara Malin; Harari, Florencia; Lu, Ying; Casimiro, Esperanza; Vahter, Marie

    2016-10-01

    Boron is a metalloid found at highly varying concentrations in soil and water. Experimental data indicate that boron is a developmental toxicant, but the few human toxicity data available concern mostly male reproduction. To evaluate potential effects of boron exposure through drinking water on pregnancy outcomes. In a mother-child cohort in northern Argentina (n=194), 1-3 samples of serum, whole blood and urine were collected per woman during pregnancy and analyzed for boron and other elements to which exposure occurred, using inductively coupled plasma mass spectrometry. Infant weight, length and head circumference were measured at birth. Drinking water boron ranged 377-10,929μg/L. The serum boron concentrations during pregnancy ranged 0.73-605μg/L (median 133μg/L) and correlated strongly with whole-blood and urinary boron, and, to a lesser extent, with water boron. In multivariable-adjusted linear spline regression analysis (non-linear association), we found that serum boron concentrations above 80μg/L were inversely associated with birth length (B-0.69cm, 95% CI -1.4; -0.024, p=0.043, per 100μg/L increase in serum boron). The impact of boron appeared stronger when we restricted the exposure to the third trimester, when the serum boron concentrations were the highest (0.73-447μg/L). An increase in serum boron of 100μg/L in the third trimester corresponded to 0.9cm shorter and 120g lighter newborns (p=0.001 and 0.021, respectively). Considering that elevated boron concentrations in drinking water are common in many areas of the world, although more screening is warranted, our novel findings warrant additional research on early-life exposure in other populations. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  10. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst.

  11. The investigation of physical conditions of boron uptake region in proton boron fusion therapy (PBFT

    Directory of Open Access Journals (Sweden)

    Joo-Young Jung

    2016-09-01

    Full Text Available We conducted a quantitative study to identify the effectiveness of proton boron fusion therapy (PBFT. Four simulation scenarios were designed to investigate the escalation in total dose with the proton boron reaction using a Monte Carlo n-particle extended (MCNPX 2.6.0 simulation. The peak integrated dose was obtained for three different physical conditions (i.e., boron uptake region (BUR thickness, BUR location, and boron concentration with differing proton beam energy (60–90 MeV. We found that the peak integrated dose was increased by up to 96.62% compared to the pristine proton Bragg-peak. For the synergetic effect to take place with 60–70 MeV proton beam, the BUR had to be at least 0.3 cm thick while spanning the Bragg-peak. Similarly to the thickness, the BUR location needed to be within 0.3 cm from the Bragg-peak when the thickness was maintained at 0.9 cm. An effective proton boron reaction required the boron concentration to be equal to or greater than 14.4 mg/g. These results demonstrate the impact of various physical and beam conditions of the PBFT, which are critical environmental factors for the treatment planning. We envision that this study will advance our understanding of the PBFT, which can be an invaluable treatment method for maximizing the potential of proton therapy.

  12. Testing boron carbide under triaxial compression

    Science.gov (United States)

    Anderson, Charles; Chocron, Sidney; Dannemann, Kathryn A.; Nicholls, Arthur E.

    2012-03-01

    This article focuses on the pressure dependence and summarizes the characterization work conducted on intact and predamaged specimens of boron carbide under confinement in a pressure vessel and in a thick steel sleeve. The failure curves obtained are presented, and the data compared to experimental data from the literature.

  13. Kinetic analysis of boron carbide sintering

    International Nuclear Information System (INIS)

    Borchert, W.; Kerler, A.R.

    1975-01-01

    The kinetics of the sintering of boron carbide were investigated by shrinkage measurements with a high-temperature dilatometer under argon atmosphere in dependence on temperature, grain size, and pressure. The activation energies and the reaction mechanisms of the different stages of sintering were determined. (orig.) [de

  14. Compaction of amorphous iron–boron powder

    DEFF Research Database (Denmark)

    Hendriksen, Peter Vang; Mørup, Steen; Koch, Christian

    1993-01-01

    report on attempts to compact amorphous iron–boron particles prepared by chemical reduction of Fe(II) ions in aqueous solution by NaBH4 (Ref. 2). The particles prepared in this way are pyrophoric, but can be passivated. The small particle size (10–100 nm), characteristic of this preparation technique...

  15. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

  16. Energetics of Boron Doping of Carbon Pores

    Science.gov (United States)

    Wexler, Carlos; St. John, Alexander; Connolly, Matthew

    2014-03-01

    Carbon-based materials show promise, given their light weight, large surface areas and low cost for storage of hydrogen and other gases, e.g., for energy applications. Alas, the interaction of H2 and carbon, 4-5kJ/mol, is insufficient for room-temperature operation. Boron doping of carbon materials could raise the binding energy of H2 to 12-15kJ/mol. The nature of the incorporation of boron into a carbon structure has not been studied so far. In this talk we will address the energetics of boron incorporation into a carbon matrix via adsorption and decomposition of decaborane by first principles calculations. These demonstrate: (a) A strong adsorption of decaborane to carbon (70-80kJ/mol) resulting in easy incorporation of decaborane, sufficient for up to 10-20% B:C at low decaborane vapour pressures. (b) Identification that boron acts as an electron acceptor when incorporated substitutionally into a graphene-like material, as expected due to its valence. (c) The electrostatic field near the molecule is responsible for ca. 2/3 of the enhancement of the H2-adsorbent interaction in aromatic compounds such as pyrene, coronene and ovalene. Supported by DOE DE-FG36-08GO18142, ACS-PRF 52696-ND5, and NSF 1069091.

  17. Anomalous Seebeck coefficient in boron carbides

    International Nuclear Information System (INIS)

    Aselage, T.L.; Emin, D.; Wood, C.; Mackinnon, I.D.R.; Howard, I.A.

    1987-01-01

    Boron carbides exhibit an anomalously large Seebeck coefficient with a temperature coefficient that is characteristic of polaronic hopping between inequivalent sites. The inequivalence in the sites is associated with disorder in the solid. The temperature dependence of the Seebeck coefficient for materials prepared by different techniques provides insight into the nature of the disorder

  18. Reaction of boron carbide with molybdenum disilicide

    International Nuclear Information System (INIS)

    Novikov, A.V.; Melekhin, V.F.; Pegov, V.S.

    1989-01-01

    The investigation results of interaction in the B 4 C-MoSi 2 system during sintering in vacuum are presented. Sintering of boron carbide with molybdenum disilicide is shown to lead to the formation of MoB 2 , SiC, Mo 5 Si 3 compounds, the presence of carbon-containing covering plays an important role in sintering

  19. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  20. NEW ADVANCES IN BORON SOIL CHEMISTRY - Paper

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  1. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

  2. Perfomance analysis of boron carbide in LMFBR

    International Nuclear Information System (INIS)

    Pitner, A.L.; Birney, K.R.

    1975-01-01

    Reactivity control in the FFTF and LMFBR's will be maintained by control elements utilizing boron carbide pellets contained in stainless steel pins. Computer performance codes predict irradiation service conditions of absorber pellets and identify required experimental testing. Test results are incorporated in the codes to improve performance prediction capabilities

  3. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  4. Investigation into organic boron compounds complexing

    International Nuclear Information System (INIS)

    Yuzhakova, G.A.; Belonovich, M.I.; Rybakova, M.N.; Morozova, T.L.; Lapkin, I.I.

    1983-01-01

    Triarylboranes interact with 4-amino-1, 2, 4-triazole With the formation of complexes of the composition 1:1. Ligand forms coordination bond with boron at the expense of pyridine atom of triazole cycle nitrogen. IR spectra, yields and decomposition temperatures of the complexes are presented

  5. Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study.

    Science.gov (United States)

    Williams, R M; Gladstone, H B; Moy, R L

    1999-12-01

    Laser hair removal is a popular treatment method for removing unwanted hair. Several laser systems are available for laser hair removal. The gallium aluminum arsenide semiconductor diode (GAASD) laser is one of the newer laser modalities to be studied. To evaluate the efficacy of the GAASD laser system in removing unwanted hair. Twenty-six patients with brown or black hair growth were treated with the GAASD laser at fluences of 20-80 J/cm2. Hair regrowth was measured 4 weeks after the first treatment, 4 weeks after the second treatment, 4 weeks after the third treatment, and 4 weeks, 8 weeks, and 8 months after the fourth treatment. GAASD laser treatment resulted in hair growth delay in all treated regions. Repeated laser treatments did not produce an increased number of vellus hairs. The percentage of hair reduction fluctuated between 5% and 13% with the second or third treatment averaging the highest percent reduction. In all cases, the percentage of hair reduction of the treatment sites evaluated at 8 months after the fourth treatment was less than both the second and third treatments (highest average percent reduction) and the fourth (last) treatment.

  6. Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

    Science.gov (United States)

    Anspaugh, B. E.; Downing, R. G.

    1984-01-01

    Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

  7. Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS.

    Science.gov (United States)

    Torrance, Keith W; Keenan, Helen E; Hursthouse, Andrew S; Stirling, David

    2010-01-01

    The chemistry of semiconductor wafer processing liquid waste, contaminated by heavy metals, was investigated to determine arsenic content. Arsenic and gallium concentrations were determined for waste slurries collected from gallium arsenide (GaAs) wafer processing at three industrial sources and compared to slurries prepared under laboratory conditions. The arsenic and gallium content of waste slurries was analyzed using inductively coupled plasma mass-spectrometry (ICP-MS) and it is reported that the arsenic content of the waste streams was related to the wafer thinning process, with slurries from wafer polishing having the highest dissolved arsenic content at over 1,900 mgL(-1). Lapping slurries had much lower dissolved arsenic (manufacturing process, with limited recycling. Although gallium can be economically recovered from waste slurries, there is little incentive to recover arsenic, which is mostly landfilled. Options for treating GaAs processing waste streams are reviewed and some recommendations made for handling the waste. Therefore, although the quantities of hazardous waste generated are miniscule in comparison to other industries, sustainable manufacturing practices are needed to minimize the environmental impact of GaAs semiconductor device fabrication.

  8. Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

    International Nuclear Information System (INIS)

    Flora, Swaran J.S.; Bhatt, Kapil; Mehta, Ashish

    2009-01-01

    Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

  9. Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

    Science.gov (United States)

    Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

    1990-01-01

    The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

  10. Study of the Hall effect in gallium and indium arsenides in solid and liquid phases

    International Nuclear Information System (INIS)

    Glazov, V.M.; Kol'tsov, V.B.; Sulejmanov, I.R.

    1985-01-01

    Hall effect in gallium and indium arsenides in solid and liquid state is investigated within the framework of a united experiment for the first time. As a result the Hall constant change in the course of these compounds melting is determined experimentally, and on the basis of data obtained and using well-known hopping electric conductivity values, changes of charge carrier density and mobility are estimated. The observed differences in the jumps of pointed characteristics in the course of melting of GaAs compounds on the one hand and InAs - on the other are explained by behaviour peculiarities of the latter in a solid phase dose to the melting temperature. Data on Hall effect in GaAs and InAs melts is abtaned for the first time. Thermal width values of forbidden zone of A 3 As compound calculated on the basis of Hall measurements, conform well with assessment results on the basis of data on electric conductivity

  11. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R.; Myers, Samuel Maxwell,

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  12. Itinerant Double-Q Spin-Density Wave in Iron Arsenide Superconductors

    Science.gov (United States)

    Osborn, Raymond; Allred, Jared; Chmaissem, Omar; Rosenkranz, Stephan; Brown, Dennis; Taddei, Keith; Krogstad, Matthew; Bugaris, Daniel; Chung, Duck-Young; Claus, Helmut; Lapidus, Saul; Kanatzidis, Mercouri; Kang, Jian; Fernandes, Rafael; Eremin, Ilya

    The recent observation of a tetragonal magnetic (C4) phase in hole-doped iron arsenide superconductors has provided evidence of a magnetic origin for the electronic nematicity in the C2 phase of these compounds. Now, Mössbauer data shows that the new phase also establishes the itinerant character of the antiferromagnetism of these materials and the primary role played by magnetic over orbital degrees of freedom. Neutron diffraction had shown that the magnetic order in the C4 phase was compatible with a double-Q structure arising from a collinear spin-density wave along both the X and Y directions simultaneously. The coherent superposition of the two modulations produces a non-uniform magnetic structure, in which the spin amplitudes vanish on half of the sites and double on the others, a uniquely itinerant effect that is incompatible with local moment magnetism. Mössbauer spectra in the C4 phase confirm this double-Q structure, with 50% of the spectral weight in a zero-moment peak and 50% with double the magnetic splitting seen in the C2 phase. Supported by the US DOE Office of Science, Materials and Engineering Division.

  13. Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats.

    Science.gov (United States)

    Flora, Swaran J S; Bhatt, Kapil; Mehta, Ashish

    2009-10-15

    Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

  14. Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy.

    Science.gov (United States)

    Chen, Bin; Fu, Xuewen; Tang, Jau; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati; Zewail, Ahmed H

    2017-12-05

    Eutectic-related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of a phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here, we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional (4D) electron microscopy. The nondestructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic-related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth, and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control aided by 4D imaging of phase reaction processes on the nanometer-ultrafast time scale opens new venues for engineering various reactions in a wide variety of other systems. Copyright © 2017 the Author(s). Published by PNAS.

  15. Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

    1988-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  16. Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy.

    Science.gov (United States)

    Walia, Jaspreet; Boulanger, Jonathan; Dhindsa, Navneet; LaPierre, Ray; Tang, Xiaowu Shirley; Saini, Simarjeet S

    2016-06-17

    Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm(-2) was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III-V nanowire devices.

  17. Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array.

    Science.gov (United States)

    Zhang, Yiming; Jiang, Tao; Tang, Longhua

    2017-11-15

    The near-infrared (NIR) optical detection of biomolecules with high sensitivity and reliability have been expected, however, it is still a challenge. In this work, we present a gold nanorods (AuNRs)-over-gallium arsenide nanohorn-like array (GaAs NHA) system that can be used for the ultrasensitive and specific NIR photoluminescence (PL) detection of DNA and proteins. The fabrication of GaAs NHA involved the technique of colloidal lithography and inductively coupled plasma dry etching, yielding large-area and well-defined nanostructural array, and exhibiting an improved PL emission compared to the planar GaAs substrate. Importantly, we found that the DNA-bridged AuNRs attachment on NHA could further improve the PL intensity from GaAs, and thereby provide the basis for the NIR optical sensing of biological analytes. We demonstrated that DNA and thrombin could be sensitively and specifically detected, with the detection limit of 1 pM for target DNA and 10 pM for thrombin. Such ultrasensitive NIR optical platform can extend to the detection of other biomarkers and is promising for clinical diagnostics. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. The formation of amplitude spectra in X-ray pixel detectors made of gallium arsenide.

    Science.gov (United States)

    Ayzenshtat, Gennadiy; Prokopiev, Dmitriy; Baidali, Sergey; Tolbanov, Oleg; Dorzheeva, Larisa

    2017-02-21

    This study aims to analyse energy spectra formation in semiconductor X-ray pixel detectors using a simple experimental method. The calculations were performed for the pixel detectors made of high-resistivity gallium arsenide compensated by chromium GaAs (Cr). A peculiar feature of these detectors is an extremely short lifetime of the holes. When using ordinary detectors with planar electrodes the spectra with high energy resolution could not be observed. In this study, the shape of amplitude spectra of gamma rays were calculated with energy W0 = 60 and 17 keV. The calculations were performed for the pixel detector of GaAs (Cr) with the thickness of d = 500μm and pixel pitch of 50μm. The mobility of electrons and holes were assumed to be μn = 3000 cm2/Vs, μp = 300 cm2/Vs, and the lifetimes were τn = 20 ns and τp = 1 ns, respectively. It was demonstrated that in the pixel detector, where there was practically no collection of holes and the amplitude spectra occurred with the energy resolution of 3.5 keV. The calculations show that energy spectra of the pixel detectors has a high energy resolution at an appropriate polarity applied bias voltage. The calculation results were conformed by the experimental data.

  19. In vitro toxicity of gallium arsenide in alveolar macrophages evaluated by magnetometry, cytochemistry and morphology.

    Science.gov (United States)

    Okada, M; Karube, H; Niitsuya, M; Aizawa, Y; Okayasu, I; Kotani, M

    1999-12-01

    Gallium arsenide (GaAs), a chemical compound of gallium and arsenic, causes various toxic effects including pulmonary diseases in animals. Since the toxicity is not completely investigated, GaAs has been used in workplaces as the material of various semiconductor products. The present study was conducted to clarify the toxicity of GaAs particles in the alveolar macrophages of hamsters using magnetometry, enzyme release assays and morphological examinations. Alveolar macrophages obtained from hamsters by tracheobronchial lavage and adhered to the disks in the bottom of wells were exposed to ferrosoferric oxide and GaAs particles. Ferrosoferric oxide particles were magnetized externally and the remanent magnetic field was measured. Relaxation, a fast decline of the remanent magnetic fields radiated from the alveolar macrophages, was delayed and decay constants were decreased dose-dependently due to exposure to GaAs. Because the relaxation is thought to be associated with cytoskeleton, the exposure of GaAs may have impaired the motor function of them. Enzyme release assay and morphological findings indicated the damage to the macrophages. Thus the cytotoxicity causes cytostructural changes and cell death. According to DNA electrophoresis and the TUNEL method, necrotic changes occur more frequently than apoptotic changes.

  20. Boron nanoparticles inhibit turnour growth by boron neutron capture therapy in the murine B16-OVA model

    DEFF Research Database (Denmark)

    Petersen, Mikkel Steen; Petersen, Charlotte Christie; Agger, Ralf

    2008-01-01

    Background: Boron neutron capture therapy usually relies on soluble, rather than particulate, boron compounds. This study evaluated the use of a novel boron nanoparticle for boron neutron capture therapy. Materials and Methods: Two hundred and fifty thousand B16-OVA tumour cells, pre......-incubated with boron nanoparticles for 12 hours, were injected subcutaneously into C57BL16J mice. The tumour sites were exposed to different doses of neutron radiation one, four, or eight days after tumour cell inoculation. Results: When the tumour site was irradiated with thermal neutrons one day after injection......, tumour growth was delayed and the treated mice survived longer than untreated controls (median survival time 20 days (N=8) compared with 10 days (N=7) for untreated mice). Conclusion: Boron nanoparticles significantly delay the growth of an aggressive B16-OVA tumour in vivo by boron neutron capture...

  1. Biological activity of N(4)-boronated derivatives of 2'-deoxycytidine, potential agents for boron-neutron capture therapy.

    Science.gov (United States)

    Nizioł, Joanna; Uram, Łukasz; Szuster, Magdalena; Sekuła, Justyna; Ruman, Tomasz

    2015-10-01

    Boron-neutron capture therapy (BNCT) is a binary anticancer therapy that requires boron compound for nuclear reaction during which high energy alpha particles and lithium nuclei are formed. Unnatural, boron-containing nucleoside with hydrophobic pinacol moiety was investigated as a potential BNCT boron delivery agent. Biological properties of this compound are presented for the first time and prove that boron nucleoside has low cytotoxicity and that observed apoptotic effects suggest alteration of important functions of cancer cells. Mass spectrometry analysis of DNA from cancer cells proved that boron nucleoside is inserted into nucleic acids as a functional nucleotide derivative. NMR studies present very high degree of similarity of natural dG-dC base pair with dG-boron nucleoside system. Copyright © 2015 Elsevier Ltd. All rights reserved.

  2. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  3. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  4. Laser-induced photochemical enrichment of boron isotopes

    International Nuclear Information System (INIS)

    Freund, S.M.; Ritter, J.J.

    1976-01-01

    A boron trichloride starting material containing both boron-10 isotopes and boron-11 isotopes is selectively enriched in one or the other of these isotopes by a laser-induced photochemical method involving the reaction of laser-excited boron trichloride with either H 2 S or D 2 S. The method is carried out by subjecting a low pressure gaseous mixture of boron trichloride starting material and the sulfide to infrared radiation from a carbon dioxide TE laser. The wave length of the radiation is selected so as to selectively excite one or the other of boron-10 BCl 3 molecules or boron-11 BCl 3 molecules, thereby making them preferentially more reactive with the sulfide. The laser-induced reaction produces both a boron-containing solid phase reaction product and a gaseous phase containing mostly unreacted BCl 3 and small amounts of sulfhydroboranes. Pure boron trichloride selectively enriched in one of the isotopes is recovered as the primary product of the method from the gaseous phase by a multi-step recovery procedure. Pure boron trichloride enriched in the other isotope is recovered as a secondary product of the method by the subsequent chlorination of the solid phase reaction product followed by separation of BCl 3 from the mixture of gaseous products resulting from the chlorination

  5. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  6. Boron removal from aqueous solution by direct contact membrane distillation.

    Science.gov (United States)

    Hou, Deyin; Wang, Jun; Sun, Xiangcheng; Luan, Zhaokun; Zhao, Changwei; Ren, Xiaojing

    2010-05-15

    The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 microg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution. Copyright (c) 2009 Elsevier B.V. All rights reserved.

  7. High altitude calibration of thirty-three silicon and gallium arsenide solar cells on a sounding rocket

    Science.gov (United States)

    Thomas, N. L.; Sarles, F. W., Jr.

    1976-01-01

    Twenty-nine n/p silicon and four p/n gallium arsenide solar cells were calibrated on board a high-altitude sounding rocket which provided a stable platform outside the earth's atmosphere. Approximately 75 characteristic current-voltage curves were obtained for each of thirty-two of the cells; the calibration accuracy for both current and voltage was 0.1%. For comparison, the short circuit current, open circuit voltage, and maximum power of the solar cells were also measured under solar simulators (air mass = 0) and on the ground (air mass = 1.2).

  8. Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.

    Science.gov (United States)

    Kim, Dae-Hee; Kim, Dae-Hyun; Kim, Yeong-Cheol

    2014-10-01

    The initial oxidation of a gallium arsenide (001)-β2(2 x 4) surface with an oxygen molecule was investigated using density functional theory. The oxygen molecule was adsorbed on the surface without any energy barrier. The dissociation of the oxygen molecule on the first arsenic layer had two dissociation paths; the inter-dimer and intra-dimer. The inter-dimer dissociation was the dominant dissociation path based on the energy barriers. The two dissociated oxygen atoms preferred breaking the arsenic-gallium back-bond to form arsenic-oxygen-gallium bonds. Our results are in good agreement with literature of the scanning tunneling microscope study.

  9. Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide.

    Science.gov (United States)

    Chu, Zheng; Liu, Jinsong; Wang, Kejia

    2012-05-01

    A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100  kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60  kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed.

  10. The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide

    Science.gov (United States)

    Nomoev, S. A.; Vasil'evskii, I. S.; Vinichenko, A. N.; Kozlovskii, K. I.; Chistyakov, A. A.; Mishina, E. D.; Khusyainov, D. I.; Buryakov, A. M.

    2018-01-01

    Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670-720°C) was established.

  11. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    Science.gov (United States)

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  12. Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy.

    Science.gov (United States)

    Spirkoska, D; Abstreiter, G; Fontcuberta I Morral, A

    2008-10-29

    Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowire ensembles were measured. The small linewidth of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wavenumbers when the diameter of the nanowires is decreased or the environment dielectric constant increased.

  13. Analytical techniques for boron and boron 10 analysis in a solid experimental tumor EO.771

    International Nuclear Information System (INIS)

    Porschen, W.; Marx, J.; Feinendegen, L.E.

    1987-01-01

    If a tumor can be preferentially loaded with a suitable boron-10 compound and irradiated with thermal neutrons, malignant cells can be selectively destroyed via the α-particle + Li 7-nucleus from the reaction 10 B(n,α) 7 Li. Neutron capture therapy with two boron-10 amino acid analogs of low toxicity has been tested in recent years: (a) trimethylamine carboxyborane, (A3) and (b) amine-carboxyborane, (A7). Now the boron-10 glycineamide analog (A8), amineboryl carboxamide has been synthsized; it contains 13.81% boron (90% Boron 10+10% Boron 11) and shows a very low toxicity in mice. The effects of this compund were tested on the syngeneic solid adenocarcinoma EO 771 on the right hind leg of male C57 BL/6J mice under standard conditions, by measuring tumor volume growth delay and cell cycle changes using flow cytometry. Boron distribution between tumor and muscle was analyzed by emission spectroscopy with inductively coupled plasma (ICP) following injection of a suspension of peanut oil emulsion. In addition, boron-10 concentration in the tumor were analyzed with prompt γ-activation analysis and neutron capture radiography (Kodak-Pathe LR115) at the MRR reactor in Brookhaven after i.p. injection of 0.4 mg/g A8. Application of A8 alone (0.4 mg/g i.p.) or thermal neutron irradiation of the tumor EO. 771 produced a tumor growth delay of 1-2 days for tumor volume doubling. Application of the boron 10 glycine-amide analog A8 i.p. plus 5x10 12 n/cm 2 resulted in a growth delay of 3-6 days. In contrast intratumoral application of A8 plus 4x10 12 n/cm 2 neutrons gave a growth delay of 7-14 days; the fraction of (G2+M) cells rose from 35% (neutrons alone) to 52%, as evaluated from flow cytometry. (orig.)

  14. Diffusion Boronizing of H11 Hot Work Tool Steel

    Science.gov (United States)

    Jurči, Peter; Hudáková, Mária

    2011-10-01

    The H11 hot work tool steel was boronized at various processing parameters, austenitized, quenched, and tempered to a core hardness of 47-48 HRC. Microstructure, phase constitution, and microhardness of boronized layers were investigated. Effect of boronized region on the bulk properties was determined by the Charpy impact test. Structure of boronized regions is formed by the compound layers and diffusion inter-layer. The compound layers consisted of only (Fe,Cr)2B phase, but in the case of longer processing time, they contained also of the (Fe,Cr)B-phase. The inter-layer contained enhanced portion of carbides, formed due to carbon diffusion from the boride compounds toward the substrate. Microhardness of boronized layers exceeded considerably 2000 HV 0.1. However, boronizing led to a substantial lowering of the Charpy impact toughness of the material.

  15. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs.

    Science.gov (United States)

    Mannix, Andrew J; Zhou, Xiang-Feng; Kiraly, Brian; Wood, Joshua D; Alducin, Diego; Myers, Benjamin D; Liu, Xiaolong; Fisher, Brandon L; Santiago, Ulises; Guest, Jeffrey R; Yacaman, Miguel Jose; Ponce, Arturo; Oganov, Artem R; Hersam, Mark C; Guisinger, Nathan P

    2015-12-18

    At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal. Copyright © 2015, American Association for the Advancement of Science.

  16. Influence of dopants, particularly carbon, on β-rhombohedral boron

    Science.gov (United States)

    Werheit, H.; Flachbart, K.; Pristáš, G.; Lotnyk, D.; Filipov, V.; Kuhlmann, U.; Shitsevalova, N.; Lundström, T.

    2017-09-01

    Due to the high affinity of carbon to boron, the preparation of carbon-free boron is problematic. Even high-purity (6 N) β-rhombohedral boron contains 30-60 ppm of C. Hence, carbon affects the boron physical properties published so far more or less significantly. We studied well-defined carbon-doped boron samples based on pure starting material carefully annealed with up to about 1% C, thus assuring homogeneity. We present and discuss their electrical conductivity, optical absorption, luminescence and phonon spectra. Earlier attempts of other authors to determine the conductivity of C-doped boron are revised. Our results allow estimating the effects of oxygen and iron doping on the electrical conductivity using results taken from literature. Discontinuities at low T impair the electronic properties.

  17. Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

    International Nuclear Information System (INIS)

    Patel, R.B.; Chou, T.; Iqbal, Z.

    2014-01-01

    The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  18. Boron autoradiography method applied to the study of steels

    International Nuclear Information System (INIS)

    Gugelmeier, R.; Barcelo, G.N.; Boado, J.H.; Fernandez, C.

    1986-01-01

    The boron state, contained in the steel microestructure, is determined. The autoradiography by neutrons is used, permiting to obtain boron distribution images by means of additional information which is difficult to acquire by other methods. The application of the method is described, based on the neutronic irradiation of a polished steel sample, over which a celulose nitrate sheet or other appropriate material is fixed to constitute the detector. The particles generated by the neutron-boron interaction affect the detector sheet, which is subsequently revealed with a chemical treatment and can be observed at the optical microscope. In the case of materials used for the construction of nuclear reactors, special attention must be given to the presence of boron, since owing to the exceptionaly high capacity of neutron absorption, lowest quantities of boron acquire importance. The adaption of the method to metallurgical problems allows the obtainment of a correlation between the boron distribution images and the material's microstructure. (M.E.L.) [es

  19. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.F.; Lin, S.Y. [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China); Peir, J.J. [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China); Liao, J.W. [Graduate Institute of Veterinary Pathobiology, National Chung Hsing University, Taiwan (China); Lin, Y.C. [Department of Veterinary Medicine, National Chung Hsing University, Taiwan (China); Chou, F.I., E-mail: fichou@mx.nthu.edu.tw [Institute of Nuclear Engineering and Science, National Tsing Hua University, Taiwan (China)] [Nuclear Science and Technology Development Center, National Tsing Hua University, Taiwan (China)

    2011-12-15

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 {mu}g {sup 10}B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague-Dawley (SD) rats were studied by administrating 25 mg {sup 10}B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4-6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  20. Strongly Phosphorescent Transition Metal π-Complexes of Boron-Boron Triple Bonds.

    Science.gov (United States)

    Braunschweig, Holger; Dellermann, Theresa; Dewhurst, Rian D; Hupp, Benjamin; Kramer, Thomas; Mattock, James D; Mies, Jan; Phukan, Ashwini K; Steffen, Andreas; Vargas, Alfredo

    2017-04-05

    Herein are reported the first π-complexes of compounds with boron-boron triple bonds with transition metals, in this case Cu I . Three different compounds were isolated that differ in the number of copper atoms bound to the BB unit. Metalation of the B-B triple bonds causes lengthening of the B-B and B-C NHC bonds, as well as large upfield shifts of the 11 B NMR signals, suggesting greater orbital interactions between the boron and transition metal atoms than those observed with recently published diboryne/alkali metal cation complexes. In contrast to previously reported fluorescent copper(I) π-complexes of boron-boron double bonds, the Cu n -π-diboryne compounds (n = 2, 3) show intense phosphorescence in the red to near-IR region from their triplet excited states, according to their microsecond lifetimes, with quantum yields of up to 58%. While the Cu diborene bond is dominated by electrostatic interactions, giving rise to S 1 and T 1 states of pure IL(π-π*) nature, DFT studies show that the Cu I π-complexes of diborynes reported herein exhibit enhanced metal d orbital contributions to HOMO and HOMO-1, which results in S 1 and T 1 having significant MLCT character, enabling strong spin-orbit coupling for highly efficient intersystem-crossing S 1 → T n and phosphorescence T 1 → S 0 .

  1. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  2. Molybdenum disulphide (MoS2) - gallium arsenide (GaAs) heterostructures for solar cell applications

    International Nuclear Information System (INIS)

    Jamieson, I.M.; Jakovidis, G.

    2004-01-01

    Full text: Heterostructures provide a means of absorbing a greater range of the broad solar spectrum in photovoltaic cells compared with single band gap materials. Several layered transition metal dichalcogenides are potential candidates since they have near ideal top layer band gap energy, high absorption coefficients, long minority carrier lifetimes, and large diffusion lengths. One major problem with heterostructures has been the lattice parameter mismatch leading to misfit dislocations. Such defects act as recombination centres that are detrimental to cell performance. Two dimensional layered materials overcome this difficulty because a weak Van der Waals interaction exists at the interface instead of the usual epitaxial growth, with crystallographic texture an important film structural property. If the layered compounds are to be useful as solar cells then they must be grown in a highly textured manner with the c-axis perpendicular to the substrate. Much effort has been devoted to such growth, to date there is no method which does not rely on metal particles or substrates that promote precursor phases to achieve this aim. In this study, thin films of a model material from this class, molybdenum disulphide, MoS 2 , (band gap E g = 1.8 eV), has been deposited by radio frequency magnetron sputtering and pulsed laser deposition techniques on a gallium arsenide substrate (E g =1.4 eV). Thin film structures are characterised mainly by angle dispersive x-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. These techniques reveal that there exists a region of parameter space where substantial desired bulk texturing of MoS 2 takes place without the need for metal or precursor phases. It was found that higher substrate temperatures, lower power density and higher sputtering gas pressures favoured the desired texture

  3. Gallium arsenide selectively up-regulates inflammatory cytokine expression at exposure site.

    Science.gov (United States)

    Becker, Stephen M; McCoy, Kathleen L

    2003-12-01

    Gallium arsenide (GaAs), a technologically and economically important semiconductor, is widely utilized in both military and commercial applications. This chemical is a potential health hazard as a carcinogen and immunotoxicant. We previously reported that macrophages at the exposure site exhibit characteristics of activation. In vitro culture of macrophages with GaAs fails to recapitulate the in vivo phenotype, suggesting that complete GaAs-mediated activation in vivo may require other cells or components found in the body's microenvironment. Our present study examined the role of cytokines upon GaAs-mediated macrophage activation. Intraperitoneal administration of GaAs elicited rapid specific recruitment of blood monocytes to the exposure site. This recruitment occurred concomitant with up-regulation of 17 chemokine and inflammatory cytokine mRNAs, while transcripts of three inhibitory cytokines diminished. Administration of latex beads caused less cytokine induction than GaAs, indicating that changes in mRNA levels could not be attributed to phagocytosis. Four representative chemokines and cytokines were selected for further analysis. Increased cytokine mRNA expression was paralleled by similar increases in cytokine protein levels, and secreted protein products were detected in peritoneal fluid. Cytokine protein expression was constrained to myeloid cells, and to a lesser extent to B cells. Alterations in patterns of cytokine gene expression elucidate mechanisms for increased cellular activation and antigen processing, and modulation of the inflammatory response. Our findings indicate that in vivo GaAs exposure alters cytokine gene expression, which may lead to an inflammatory reaction and contribute to pathological tissue damage.

  4. An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

    Science.gov (United States)

    Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

    1999-01-01

    PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

  5. Separation and Analysis of Boron Isotope in High Plant by Thermal Ionization Mass Spectrometry

    OpenAIRE

    Xu, Qingcai; Dong, Yuliang; Zhu, Huayu; Sun, Aide

    2015-01-01

    Knowledge of boron and its isotope in plants is useful to better understand the transposition and translocation of boron within plant, the geochemical behavior in the interface between soil and plant, and the biogeochemical cycle of boron. It is critical to develop a useful method to separate boron from the plant for the geochemical application of boron and its isotope. A method was developed for the extraction of boron in plant sample, whose isotope was determined by thermal ionization mass ...

  6. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-06

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

  7. Apparatus for the production of boron nitride nanotubes

    Science.gov (United States)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  8. Behavior of disordered boron carbide under stress.

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W; Chhowalla, Manish

    2006-07-21

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6 GPa approximately = P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2-3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  9. Steam activation of boron doped diamond electrodes

    International Nuclear Information System (INIS)

    Ohashi, Tatsuya; Zhang Junfeng; Takasu, Yoshio; Sugimoto, Wataru

    2011-01-01

    Highlights: → Steam activation of boron doped diamond (BDD) electrodes. → Steam activated BDD has a porous columnar texture. → Steam activated BDD has a wide potential window. - Abstract: Boron doped diamond (BDD) electrodes were activated in steam at various temperatures, resulting in high quality BDD electrodes with a porous microstructure. Distinct columnar structures were observed by scanning electron microscopy. The electrochemically active surface area of the steam-activated BDD was up to 20 times larger than the pristine BDD electrode owing to the porous texture. In addition, a widening of the potential window was observed after steam activation, suggesting that the quality of BDD was enhanced due to oxidative removal of graphitic impurities during the activation process.

  10. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  11. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  12. Boron Nitride Nanotube: Synthesis and Applications

    Science.gov (United States)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; hide

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  13. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    Ferreira, T.H.; Sousa, E.M.B.

    2010-01-01

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  14. Characterization of boron doped nanocrystalline diamonds

    International Nuclear Information System (INIS)

    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

    2008-01-01

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

  15. Development of boron epoxy rocket motor chambers.

    Science.gov (United States)

    Jensen, W. M.; Knoell, A. C.; Zweben, C.

    1972-01-01

    A 71 cm diameter 74 cm length boron/epoxy composite rocket motor chamber was designed based on the geometric configuration of the JPL Applications Technology Satellite titanium alloy apogee motor chamber. Because analyses showed large stress concentrations in the domes, the configuration was modified using the same basic constraints for openings and attachments. The rocket motor chamber was then fabricated by filament winding with boron/epoxy tape and hydrostatically tested to failure at 264 N/sq cm, 57.2 N/sq cm above the design value. Two more rocket motor chambers were fabricated with the same basic constraints, but shortened to 57.6 cm for a smaller propellant load. The first of these short chambers failed in proof because of filament winding fabrication difficulties. The second chamber was successfully fabricated and passed the hydrostatic proof test.

  16. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  17. Dependence of boron cluster dissolution on the annealing ambient

    International Nuclear Information System (INIS)

    Radic, Ljubo; Lilak, Aaron D.; Law, Mark E.

    2002-01-01

    Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process

  18. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes

    Data.gov (United States)

    National Aeronautics and Space Administration — Conduct a systematic computational study on the physical and electro-mechanical properties of Boron Nitride Nanotubes (BNNTs) to evaluate their functional...

  19. Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

    National Research Council Canada - National Science Library

    Carlson, Lonnie

    2007-01-01

    .... This temperature dependent surface photovoltage effect is not compelling evidence for the majority carrier type but does suggest an increase in the carrier concentration in semiconducting boron...

  20. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  1. High resolution imaging of boron carbide microstructures

    International Nuclear Information System (INIS)

    MacKinnon, I.D.R.; Aselage, T.; Van Deusen, S.B.

    1986-01-01

    Two samples of boron carbide have been examined using high resolution transmission electron microscopy (HRTEM). A hot-pressed B 13 C 2 sample shows a high density of variable width twins normal to (10*1). Subtle shifts or offsets of lattice fringes along the twin plane and normal to approx.(10*5) were also observed. A B 4 C powder showed little evidence of stacking disorder in crystalline regions

  2. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  3. Boron isotopes as an artificial tracer.

    Science.gov (United States)

    Quast, Konrad W; Lansey, Kevin; Arnold, Robert; Bassett, Randy L; Rincon, Martha

    2006-01-01

    A field study was conducted using a combination of intrinsic and artificial tracers to estimate travel times and dilution during transport of infiltrate from a reclaimed water infiltration basin to nearby monitoring wells. A major study objective was to validate boric acid enriched in (10)B as an artificial tracer. Basin 10E at the Rio Hondo Spreading Grounds in Whittier, California, was the site of the test. The basin normally receives a mixture of treated municipal waste water, purchased State Project water, and local runoff from the San Gabriel River. Approximately 3.5 kg of (10)B-enriched boric acid was dispersed among 2.05 x 10(5) m(3) of basin water to initiate the experiment. The resultant median delta(11)B in the infiltration basin was -71 per thousand. Prior to tracer addition, the basin water had an intrinsic delta(11)B of +2 per thousand. Local monitoring wells that were used to assess travel times had delta(11)B values of +5 per thousand and +8 per thousand at the time of tracer addition. Analytic results supported an assumption that boron is conserved during ground water transport and that boron enriched in (10)B is a useful artificial tracer. Several intrinsic tracers were used to reinforce the boric acid tracer findings. These included stable isotopes of oxygen (delta(18)O) and hydrogen (deltaD), sulfate concentration, and the boron to chloride ratio. Xenon isotopes, (136)Xe and (124)Xe, also supported boron isotope results. Xenon isotopes were added to the recharge basin as dissolved gases by investigators from the Lawrence Livermore National Laboratory.

  4. Boron Isotopes Enrichment via Continuous Annular Chromatography

    OpenAIRE

    Sağlam, Gonca

    2016-01-01

    ABSTRACT Boron has two stable isotopes namely 10B and 11B isotopes. The large cross section of 10B isotope for thermal neutrons is used for reactor control in nuclear fission reactors. The thermal neutrons absorption cross sections of pure 10B and 11B are 3837 and 0.005 barns respectively. In the literature, amongst others, batch elution chromatography techniques are reported for 10B isotope enrichment. This work focuses on continuous chromatographic 10B isotope separation system via continuo...

  5. Clinical aspects of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Goodman, J.H.; Gahbauer, R.; Clendenon, N.

    1986-01-01

    Boron neutron capture therapy is potentially useful in treating malignant tumors of the central nervous system and is technically possible. Additional in vitro and in vivo testing is required to determine toxicities, normal tissue tolerances and tissue responses to treatment parameters. Adequate tumor uptake of the capture agent can be evaluated clinically prior to implementation of a finalized treatment protocol. Phase I and Phase II protocol development, clinical pharmacokinetic studies and neutron beam development

  6. Nanotwins soften boron-rich boron carbide (B13C2)

    Science.gov (United States)

    An, Qi; Goddard, William A.

    2017-03-01

    Extensive studies of metals and alloys have observed that nanotwins lead to strengthening, but the role of nanotwins in ceramics is not well established. We compare here the shear strength and the deformation mechanism of nanotwinned boron-rich boron carbide (B13C2) with the perfect crystal under both pure shear and biaxial shear deformations. We find that the intrinsic shear strength of crystalline B13C2 is higher than that of crystalline boron carbide (B4C). But nanotwins in B13C2 lower the strength, making it softer than crystalline B4C. This reduction in strength of nanotwinned B13C2 arises from the interaction of the twin boundary with the C-B-C chains that connect the B12 icosahedra.

  7. Boron-carbide-aluminum and boron-carbide-reactive metal cermets

    Science.gov (United States)

    Halverson, Danny C.; Pyzik, Aleksander J.; Aksay, Ilhan A.

    1986-01-01

    Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

  8. Boron determination in U3O8

    International Nuclear Information System (INIS)

    Ogura, Nadia S.; Sarkis, Jorge E.S.; Rosa, Daniele S.; Ulrich, Joao C.

    2009-01-01

    There exist specifications of the concentration as far the limit of impurities in the used uranium compounds is concerned. Among those impurities the boron element is detached. that in the uranium compounds acts as neutron absorber in nuclear reactions. Therefore, the determination of this element in uranium compounds, it is fundamental for the quality and performance of the nuclear fuels. However, the determination of this element is many times prejudiced by the presence of the uranium. For solving this problem, it is performed a chemical separation of the uranium (matrix) out of the interest. The most used methods to accomplish that separation are the solvent extraction and the ion exchange. In this work, the boron concentration will be done through the ion exchange technique, using polypropylene columns and Dowex AG 50W - X8 100-200 mesh cation resin in chloricide medium 0.25 M. The boron concentration will be determined through high resolution inductive coupling plasma mass spectrometry (HRICP-MS)

  9. A fundamental study of industrial boron carbide

    International Nuclear Information System (INIS)

    Zuppiroli, L.; Kormann, R.; Lesueur, D.

    1983-09-01

    Some of the physical properties of boron carbide, before and after irradiation are reviewed on the basis of several new experiments performed in our laboratory. The layered aspect of the grains of this ceramic, due to a microtwinning of the rhomboedral structure, is emphasized first. Then, the location of free carbon in samples of composition close to B 4 C is discussed in relation with new sputtering experiments. Coupled studies of the electric conductivities and the electron spin resonance lines have demonstrated the important role of free carbon in the electronic properties of boron carbide and revealed the existence of a homogeneous short range disorder, the origin of which is not very clear (amorphous concept). The elementary processes responsible of the swelling and microcracking of neutron irradiated boron carbide are rather well understood. The role of the point defects in these processes is reported. The displacement threshold energies and formation volumes are discussed in relation with electron irradiation experiments, and displacement rates are calculated in different irradiation situations including neutron irradiations [fr

  10. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Faria Gaspar, P. de.

    1994-01-01

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  11. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl.

    Science.gov (United States)

    Gentile, Luciana Chucre; Greghi, Sebastião Luiz Aguiar

    2004-12-01

    The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser) and the control group (placebo) at the end of treatment and after the mediate evaluation results (after 6 weeks), this way impairing the real measurement of laser effectiveness and placebo effect.

  12. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

    Science.gov (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

    2015-01-14

    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  13. Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

    Science.gov (United States)

    Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

    1981-01-01

    Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

  14. Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide.

    Science.gov (United States)

    Donelan, Brenda; Kneis, Christian; Scurria, Giuseppe; Cadier, Benoît; Robin, Thierry; Lallier, Eric; Grisard, Arnaud; Gérard, Bruno; Eichhorn, Marc; Kieleck, Christelle

    2016-11-01

    Optical parametric generation is demonstrated in orientation-patterned gallium arsenide, pumped by a novel single-oscillator simultaneously Q-switched and mode-locked thulium-doped fiber laser, downconverting the pump radiation into the mid-infrared wavelength regime. The maximum output energy reached is greater than 2.0 μJ per pump pulse.

  15. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    Vega C, H.R.

    2002-01-01

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  16. A new adsorbent for boron removal from aqueous solutions.

    Science.gov (United States)

    Kluczka, Joanna; Korolewicz, Teofil; Zołotajkin, Maria; Simka, Wojciech; Raczek, Malwina

    2013-01-01

    A new adsorbent based on natural clinoptilolite and amorphous zirconium dioxide (ZrO2) was prepared for the uptake of boron from fresh water. The sorption behaviour of this adsorbent for boron was investigated using a batch system and found to obey Langmuir, Freundlich and Dubinin-Radushkevich (D-R) isotherm models. The ZrO2 loading level, pH, temperature, contact time, initial boron concentration and adsorbent dose, on the removal of boron were studied. It was found that the removal of boron increased while the adsorbent dose increased and the temperature decreased at an optimum pH (pH = 8) and a contact time of 30 min. At optimum conditions, the maximum boron percentage removal was 75%. According to the D-R model, the maximum capacity was estimated to be > 3 mg B/g of the adsorbent. The adsorption energy value (calculated as 9.13 kJ/mol) indicated that the adsorption of boron on clinoptilolite modified with ZrO2 was physical in nature. The parameters of the adsorption models and the pH investigations pointed to the possibility of a chemisorption process. The thermodynamic parameters (standard entropy deltaS degrees, enthalpy deltaH degrees , and free energy deltaG degrees changes) of boron adsorption were also calculated. The negative value of deltaS degrees indicated a decreased randomness at the solid-solution interface during the boron adsorption. Negative values of deltaH degrees showed the exothermic nature of the process. The negative values of deltaG degrees implied that the adsorption of boron on clinoptilolite modified with amorphous ZrO2 at 25 degrees C was spontaneous. It was considered that boron dissolved in water had been adsorbed both physically and chemically on clinoptilolite modified with 30% ZrO2.

  17. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    International Nuclear Information System (INIS)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon

    2014-01-01

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration

  18. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    Science.gov (United States)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  19. Removal of boron species by layered double hydroxides: a review.

    Science.gov (United States)

    Theiss, Frederick L; Ayoko, Godwin A; Frost, Ray L

    2013-07-15

    Boron, which is an essential element for plants, is toxic to humans and animals at high concentrations. Layered double hydroxides (LDHs) and thermally activated LDHs have shown good uptake of a range of boron species in laboratory scale experiments when compared to current available methods, which are for the most part ineffective or prohibitively expensive. LDHs were able to remove anions from water by anion exchange, the reformation (or memory) effect and direct precipitation. The main mechanism of boron uptake appeared to be anion exchange, which was confirmed by powder X-ray diffraction (XRD) measurements. Solution pH appeared to have little effect on boron sorption while thermal activation did not always significantly improve boron uptake. In addition, perpetration of numerous LDHs with varying boron anions in the interlayer region by direct co-precipitation and anion exchange have been reported by a number of groups. The composition and orientation of the interlayer boron ions could be identified with reasonable certainty by applying a number of characterisation techniques including: powder XRD, nuclear magnetic resonance spectroscopy (NMR), X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy. There is still considerable scope for future research on the application of LDHs for the removal of boron contaminants. Copyright © 2013 Elsevier Inc. All rights reserved.

  20. Activation and deprotection of F-BODIPYs using boron trihalides.

    Science.gov (United States)

    Lundrigan, Travis; Cameron, T Stanley; Thompson, Alison

    2014-07-07

    The activation of F-BODIPYs with boron trihalides, followed by treatment with a nucleophile, effects facile substitution at boron; using water as the nucleophile promotes deprotective removal of the -BF2 moiety and thereby production of the corresponding parent dipyrrin salt in quantitative yield under extremely mild conditions.

  1. Method for removal of phosgene from boron trichloride

    Science.gov (United States)

    Freund, S.M.

    1983-09-20

    Selective ultraviolet photolysis using an unfiltered mercury arc lamp has been used to substantially reduce the phosgene impurity in a mixture of boron trichloride and phosgene. Infrared spectrophotometric analysis of the sample before and after irradiation shows that it is possible to highly purify commercially available boron trichloride with this method. 5 figs.

  2. Finite Element Analysis Of Boron Diffusion In Wood

    DEFF Research Database (Denmark)

    Krabbenhøft, Kristian; Hoffmeyer, Preben; Bechgaard, Carl

    2002-01-01

    The coupled heat and mass transfer equations for air, water and heat transfer are supplemented with a conservation equation for an additional species representing the concentration of boron in wood. Boundary conditions for wood-air. wood-soil and wood-boron interfaces arc discussed and finally...

  3. Boron Diffusion in Surface-Treated Framing Lumber

    Science.gov (United States)

    Patricia K. Lebow; Stan T. Lebow; Steven A. Halverson

    2013-01-01

    The extent of boron penetration in framing lumber treated by spray applications during construction is not well quantified. This study evaluated the effect of formulation and concentration on diffusion of boron in lumber specimens that were equilibrated in conditions that produced wood moisture contents of 18 to 21 percent. One set of specimens was pressure treated...

  4. Low-dimensional boron structures based on icosahedron B12

    Science.gov (United States)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  5. New applications of the interaction between diols and boronic acids

    NARCIS (Netherlands)

    Duval, F.L.

    2015-01-01

    Florine Duval - New applications of the interaction between diols and boronic acids – Summary Chapter 1 introduces the theory and known applications of the interaction between boronic acids and diols, and explains the context of this thesis. Diagnosis of

  6. Appraisal of SIMS applicability to boron studies in plants.

    Science.gov (United States)

    Dérue, Cedric; Gibouin, David; Verdus, Marie-Claire; Lefebvre, Fabrice; Demarty, Maurice; Ripoll, Camille; Thellier, Michel

    2002-07-15

    In the search for a new methodological approach applicable to the determination of the still poorly known primary role of boron in plant physiology, we have undertaken to appraise the potential of the SIMS method for the analytical imaging of the boron isotopes, (10)B and (11)B, at physiological concentrations in plants. With our own, CAMECA IMS4F SIMS ion analyser, and using O(2)(+) as primary ions for the detection of B(+) (plus (12)C(+) and (40)Ca(+)) secondary ions, we have been able to map quantitatively the two boron isotopes in control and boron-enriched plants, to evaluate boron concentrations at the level of individual cells and to determine boron isotopic ratios. This provides the opportunity to carry out the simultaneous labeling and imaging of boron, using enrichment with the stable isotopes, (10)B and (11)B. The method has also the potential for the simultaneous, quantitative detection of the boron isotopes and of the borate-binding sites in plant cells. Copyright 2002 Wiley-Liss, Inc.

  7. Feasibility study of SMART core with soluble boron

    International Nuclear Information System (INIS)

    Kim, Kang Seog; Lee, Chung Chan; Zee, Sung Quun

    2000-11-01

    The excess reactivity of SMART core without soluble boron is effectively controlled by 49 CEDM. We suggest another method to control the core excess reactivity using both the checkerboard type of 25 CEDM and soluble boron and perform a feasibility calculation. The soluble boron operation is categorized into the on-line and the off-line mechanisms. The former is to successively control the boron concentration according to the excess reactivity during operation and the latter is to add and change some soluble boron during refueling and repairing. Since the on-line soluble boron control system of SMART is conceptually identical to that of the commercial pressurized water reactor, we did not perform the analysis. Since the soluble boron in the complete off-line system increases the moderator temperature coefficient, the reactivity defect between hot and cold moderator temperature is decreased. However, the decrease of the reactivity is not big to satisfy the core reactivity limits. When using 25 CEDM, the possible mechanism is to control the excess reactivity by both control rod and on-line boron control mechanism between cold and hot zero power and by only control rod at hot full power. We selected the loading pattern satisfying the requirement in the view of nuclear design

  8. Effect of boron on growth criteria of some wheat cultivars

    Directory of Open Access Journals (Sweden)

    Ashraf Metwally

    2012-01-01

    Full Text Available Introduction: Toxic soil concentrations of the essential micronutrient boron (B represent major limitations to crop production worldwide. Plants have a range of defense systems that might be involved in their affinity to resist and tolerate nutrients stress.Materials and methods: The experiments were carried out to study the differential responses in five wheat cultivars to boron toxicity. Results: The fresh and dry matter yield of the test wheat cultivars showed marked decrease as the concentration of boron was increased. Elevated concentration of boron had a notable inhibitory effect on the biosynthesis of pigments fractions in the test wheat cultivars as severely as dry matter gain. The adverse concentration effects of boron on some metabolic responses were clearly displayed by shoot and root systems, exhibited in the elevated rates of proline, hydrogen peroxide and malondialdehyde formation. Potassium leakage was severely affected by boron-stress in some cultivars at all tested concentrations, while in some others a moderate damage was manifested only at the higher boron concentrations.Conclusions: Sakha 93 out of all the different cultivars investigated was found to display the lowest sensitivity to boron-stress, while Gemmeza 9 was the most sensitive one.

  9. Production of boron carbide powder by carbothermal synthesis of ...

    Indian Academy of Sciences (India)

    TECS

    weight armour plates etc (Alizadeh et al 2004). It can also be used as a reinforcing material for ceramic matrix composites. It is an excellent neutron absorption material in nuclear industry due to its high neutron absorption co- efficient (Sinha et al 2002). Boron carbide can be prepared by reaction of elemental boron and ...

  10. Eleventh international conference on boron chemistry. Programme and abstracts

    International Nuclear Information System (INIS)

    2002-01-01

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports [ru

  11. Production of boron carbide powder by carbothermal synthesis of ...

    Indian Academy of Sciences (India)

    TECS

    Production of boron carbide powder by carbothermal synthesis of gel material. A K KHANRA. Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur 721 302, India. MS received 21 August 2006; revised 29 January 2007. Abstract. Boron carbide (B4C) powder has been produced ...

  12. Vacancy complexes in carbon and boron nitride nanotubes

    CSIR Research Space (South Africa)

    Mashapa, MG

    2012-10-01

    Full Text Available The effect of divacancies on the stability, structural and electronic properties of carbon and boron nitride nanotubes is studied using the ab initio density functional method. VBBN is more stable in the boron-rich and less stable in the nitrogen...

  13. Research on weed species for phytoremediation of boron polluted soil

    African Journals Online (AJOL)

    STORAGESEVER

    2009-09-15

    Sep 15, 2009 ... This research was aimed to investigate the application of weed species for phytoremediation of soil polluted with boron. A greenhouse experiment was conducted to study the effect of increasing boron. (B) application on the growth and B uptake of common weed species, Sorghum halepense L. Pers.,.

  14. Comparison of boron and neon damage effects in boron ion-implanted resistors

    International Nuclear Information System (INIS)

    MacIver, B.A.

    1975-01-01

    Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

  15. Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

    Science.gov (United States)

    Ray, P. K.; Shutthanandan, V.

    1998-01-01

    An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

  16. Synthesis of boron nitride from boron containing poly(vinyl alcohol ...

    Indian Academy of Sciences (India)

    acid or borax, and a nitrogen-containing compound such as melamine, urea or dicyandiamide are heated in an atmo- sphere of non-oxidizing gas such as nitrogen or ammonia. ∗. Author for correspondence (mitun@cgcri.res.in). These h-BN powders have low crystallinity and crystal- lographically it belongs to boron nitride ...

  17. Synthesis of boron nitride from boron containing poly(vinyl alcohol)

    Indian Academy of Sciences (India)

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier ...

  18. From boron analogues of amino acids to boronated DNA: potential new pharmaceuticals and neutron capture agents

    International Nuclear Information System (INIS)

    Spielvogel, B.F.; Sood, Anup; Duke Univ., Durham, NC; Shaw, B.R.; Hall, I.H.

    1991-01-01

    Isoelectronic and isostructural boron analogues of the α-amino acids ranging from simple glycine analogues such as H 3 NBH 2 COOH and Me 2 NHBH 2 COOH to alanine analogues have been synthesised. A diverse variety of analogues, including precursors and derivatives (such as peptides) have potent pharmacological activity, including anticancer, antiinflammatory, analgesic, and hypolipidemic activity in animal model studies and in vitro cell cultures. Boronated nucleosides and (oligo)nucleotides, synthetic oligonucleotide analogues of ''antisense'' agents interact with a complementary nucleic acid sequence blocking the biological effect of the target sequence. Nucleosides boronated on the pyrimidine and purine bases have been prepared. It has been established that an entirely new class of nucleic acid derivatives is feasible in which one of the non-bridging oxygens in the internucleotide phosphodiester linkage can be replaced by an isoelectronic analogue, the borane group, (BH 3 ). The boronated oligonucleotides can be viewed as hybrids of the normal oxygen oligonucleotides and the methylphosphonate oligonucleotides. (author)

  19. Dietary boron: progress in establishing essential roles in human physiology.

    Science.gov (United States)

    Hunt, Curtiss D

    2012-06-01

    This review summarizes the progress made in establishing essential roles for boron in human physiology and assesses that progress in view of criteria for essentiality of elements. The evidence to date suggests that humans and at least some higher animals may use boron to support normal biological functions. These include roles in calcium metabolism, bone growth and maintenance, insulin metabolism, and completion of the life cycle. The biochemical mechanisms responsible for these effects are poorly understood but the nature of boron biochemistry suggests further characterization of the cell signaling molecules capable of complexing with boron. Such characterization may provide insights into the biochemical function(s) of boron in humans. Copyright © 2012 Elsevier GmbH. All rights reserved.

  20. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations. © The Author(s) 2015.

  1. Boron effect on stainless steel plasticity under hot deformation

    International Nuclear Information System (INIS)

    Bulat, S.I.; Kardonov, B.A.; Sorokina, N.A.

    1978-01-01

    The effect of boron on plasticity of stainless steels at temperatures of hot deformation has been studied at three levels of alloying, i.e. 0-0.01% (micro-alloying or modifying), 0.01-0.02% (low alloying) and 0.02-2.0% (high alloying). Introduction of 0.001-0.005% of boron increases hot plasticity of both low and high carbon stainless steels due to decrease in grain size and strengthening of grain boundaries. Microalloying by boron has a positive effect at temperatures below 1200-1220 deg C. At higher temperatures, particularly when its content exceeds 0.008%, boron deteriorates plasticity by increasing the size of grains and weakening their boundaries. 0.1-2% boron strengthen the stainless steel and dectease its plasticity

  2. Fracture toughness of borides formed on boronized ductile iron

    International Nuclear Information System (INIS)

    Sen, Ugur; Sen, Saduman; Koksal, Sakip; Yilmaz, Fevzi

    2005-01-01

    In this study, fracture toughness properties of boronized ductile iron were investigated. Boronizing was realized in a salt bath consisting of borax, boric acid and ferro-silicon. Boronizing heat treatment was carried out between 850 and 950 deg. C under the atmospheric pressure for 2-8 h. Borides e.g. FeB, Fe 2 B formed on ductile iron was verified by X-ray diffraction (XRD) analysis, SEM and optical microscope. Experimental results revealed that longer boronizing time resulted in thicker boride layers. Optical microscope cross-sectional observation of borided layers showed dentricular morphology. Both microhardness and fracture toughness of borided surfaces were measured via Vickers indenter. The harnesses of borides formed on the ductile iron were in the range of 1160-2140 HV 0.1 and fracture toughness were in the range of 2.19-4.47 MPa m 1/2 depending on boronizing time and temperature

  3. Metal-Free Boron-Containing Heterogeneous Catalysts.

    Science.gov (United States)

    Fang, Yuanxing; Wang, Xinchen

    2017-12-04

    Metal-free catalysts have distinct advantages over metal and metal oxide catalysts, such as lower cost as well as higher reliability and sustainability. Among the nonmetal compounds used in catalysis, boron-containing compounds with a few unique properties have been developed. In this Minireview, the recent advances in the field of boron-containing metal-free catalysts are presented, including binary and ternary boron-containing catalytic materials. Additionally, the three main applications in catalysis are considered, namely, electrocatalysis, thermal catalysis, and photocatalysis, with the role of boron discussed in depth for each specific catalytic application. Boron-containing compounds could have a substantial impact on the field of metal-free catalysts in the future. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  5. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  6. Density functional calculations of hydrogen adsorption on boron nanotubes and boron sheets

    Science.gov (United States)

    Cabria, I.; López, M. J.; Alonso, J. A.

    2006-02-01

    Hydrogen adsorption on the recently discovered boron nanotubes, BNTs, and on boron sheets is investigated by density functional calculations. Both molecular physisorption and dissociative atomic chemisorption are considered. The geometric and electronic structures of BNTs and boron sheets have been elucidated. These two novel boron structures present buckled surfaces with alternating up and down rows of B atoms, with a large buckling height of about 0.8 Å. The buckled structures are about 0.20 eV/atom more stable than the corresponding flat ones. However, the helicity of some BNTs does not allow for the formation of alternating up and down B rows in the surface and, therefore, these nanotubes have flat surfaces. The buckled and flat nanostructures have different geometric and bonding characteristics, but both are metallic. Molecular hydrogen physisorption energies are about 30-60 meV/molecule on boron sheets and nanotubes, actually lower than in graphene and in carbon nanotubes and far from the energies of 300-400 meV/molecule necessary for efficient hydrogen storage at room temperature and moderate pressures for onboard automotive applications. Chemisorption binding energies on BNTs are about 2.4-2.9 eV/H atom, similar to the ones obtained in CNTs. Finally, the energy barrier from molecular physisorption to dissociative chemisorption of hydrogen is about 1.0 eV /molecule. Therefore, the calculations predict physisorption as the leading adsorption mechanism of hydrogen at moderate temperatures and pressures. The expected hydrogen adsorption capacity of these novel B materials is even smaller than that of CNTs.

  7. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Lee, Mark W.; Shelly, Kenneth; Kane, Robert R.; Hawthorne, M. Frederick

    2006-01-01

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  8. Meeting the challenge of homogenous boron targeting of heterogeneous tumors for effective boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    Heber, Elisa M.; Trivillin, Veronica A.; Itoiz, Maria E.; Rebagliati, J. Raul; Batistoni, Daniel; Kreimann, Erica L.; Schwint, Amanda E.; Nigg, David W.; Gonzalez, Beatriz N.

    2006-01-01

    BNCT is a tumor cell targeted radiation therapy. Inadequately boron targeted tumor populations jeopardize tumor control. Meeting the to date unresolved challenge of homogeneous targeting of heterogeneous tumors with effective boron carriers would contribute to therapeutic efficacy. The aim of the present study was to evaluate the degree of variation in boron content delivered by boronophenylalanine (BPA), GB-10 (Na 2 10 B 10 H 10 ) and the combined administration of (BPA+GB-10) in different portions of tumor, precancerous tissue around tumor and normal pouch tissue in the hamster cheek pouch oral cancer model. Boron content was evaluated by ICP-AES. The degree of homogeneity in boron targeting was assessed in terms of the coefficient of variation ([S.D./Mean]x100) of boron values. Statistical analysis of the results was performed by one-way ANOVA and the least significant difference test. GB-10 and GB-10 plus BPA achieved respectively a statistically significant 1.8-fold and 3.3-fold increase in targeting homogeneity over BPA. The combined boron compound administration protocol contributes to homogeneous targeting of heterogeneous tumors and would increase therapeutic efficacy of BNCT by exposing all tumor populations to neutron capture reactions in boron. (author)

  9. The Combined Action of Duplicated Boron Transporters Is Required for Maize Growth in Boron-Deficient Conditions.

    Science.gov (United States)

    Chatterjee, Mithu; Liu, Qiujie; Menello, Caitlin; Galli, Mary; Gallavotti, Andrea

    2017-08-01

    The micronutrient boron is essential in maintaining the structure of plant cell walls and is critical for high yields in crop species. Boron can move into plants by diffusion or by active and facilitated transport mechanisms. We recently showed that mutations in the maize boron efflux transporter ROTTEN EAR (RTE) cause severe developmental defects and sterility. RTE is part of a small gene family containing five additional members ( RTE2 - RTE6 ) that show tissue-specific expression. The close paralogous gene RTE2 encodes a protein with 95% amino acid identity with RTE and is similarly expressed in shoot and root cells surrounding the vasculature. Despite sharing a similar function with RTE , mutations in the RTE2 gene do not cause growth defects in the shoot, even in boron-deficient conditions. However, rte2 mutants strongly enhance the rte phenotype in soils with low boron content, producing shorter plants that fail to form all reproductive structures. The joint action of RTE and RTE2 is also required in root development. These defects can be fully complemented by supplying boric acid, suggesting that diffusion or additional transport mechanisms overcome active boron transport deficiencies in the presence of an excess of boron. Overall, these results suggest that RTE2 and RTE function are essential for maize shoot and root growth in boron-deficient conditions. Copyright © 2017 by the Genetics Society of America.

  10. pH dependent salinity-boron interactions impact yield, biomass, evapotranspiration and boron uptake in broccoli (Brassica oleracea L.)

    Science.gov (United States)

    Soil pH is known to influence many important biochemical processes in plants and soils, however its role in salinity - boron interactions affecting plant growth and ion relations has not been examined. The purpose of this research was to evaluate the interactive effects of salinity, boron and soil ...

  11. Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

    NARCIS (Netherlands)

    Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

    2012-01-01

    The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

  12. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    International Nuclear Information System (INIS)

    Rámila, Consuelo d.P.; Contreras, Samuel A.; Di Domenico, Camila; Molina-Montenegro, Marco A.; Vega, Andrea; Handford, Michael; Bonilla, Carlos A.

    2016-01-01

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  13. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida

    Energy Technology Data Exchange (ETDEWEB)

    Rámila, Consuelo d.P. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Contreras, Samuel A.; Di Domenico, Camila [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Molina-Montenegro, Marco A. [Centro de Estudios Avanzados en Zonas Áridas (CEAZA), Facultad de Ciencias del Mar, Universidad Católica del Norte, Larrondo 1281, Coquimbo (Chile); Instituto de Ciencias Biológicas, Universidad de Talca, Avda. Lircay s/n, Talca (Chile); Vega, Andrea [Facultad de Agronomía e Ingeniería Forestal, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Handford, Michael [Departmento de Biología, Facultad de Ciencias, Universidad de Chile, Avenida Las Palmeras 3425, 7800024 Santiago (Chile); Bonilla, Carlos A. [Departamento de Ingeniería Hidráulica y Ambiental, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); Centro de Desarrollo Urbano Sustentable (CEDEUS), Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, 7820436 Santiago (Chile); and others

    2016-11-05

    Highlights: • P. frigida presents an extremely high boron toxicity threshold. • Restricting uptake and internal tolerance mechanisms could confer boron tolerance. • P. frigida is a boron hyperaccumulator over a wide range of concentrations. • The species has potential for phytoremediation purposes. - Abstract: Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500 mg/L), and within its tissues (>5000 mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems.

  14. Study of the boron distribution in pea and alfalfa plants using SSNTD

    International Nuclear Information System (INIS)

    Li Jianming; Inst. for Application of Atomic Energy)" data-affiliation=" (Chinese Academy of Agricultural Sciences, Beijing, BJ (China)> Inst. for Application of Atomic Energy)" >Deng Hongmin

    1988-01-01

    The distribution of boron in pea (Pisum sativum L.) and alfalfa (Medicago sativa L.) was determined by using SSNTD. The results show that boron concentrations in leaves are highest, furthermore boron concentrations of the base leaves are higher than those of the top leaves. Among flower tissues, calyx has the highest boron concentration

  15. Wettability of Pyrolytic Boron Nitride by Aluminum

    Science.gov (United States)

    Chiaramonte, Francis P.; Rosenthal, Bruce N.

    1991-01-01

    The wetting of pyrolytic boron nitride by molten 99.9999 percent pure aluminum was investigated by using the sessile drop method in a vacuum operating at approximately 660 micro-Pa at temperatures ranging from 700 to 1000 C. The equilibrium contact angle decreased with an increase in temperature. For temperatures at 900 C or less, the equilibrium contact angle was greater than 90 deg. At 1000 C a nonwetting-to-wetting transition occurred and the contact angle stabilized at 49 deg.

  16. Fabrication of boron nitride planar field emitters

    Science.gov (United States)

    Yokota, Yuuko; Tagawa, Shigeru; Sugino, Takashi

    1999-05-01

    Boron nitride (BN) films are grown on sapphire substrates by plasma-assisted chemical vapor deposition (PACVD). BN films are doped with sulfur. Insertion of the GaN layer between the BN film and sapphire leads to a tight adhesion of the BN film. The electrical resistivity of the sulfur-doped BN film is reduced to 10 3 Ω cm. The cathode electrode is formed on the BN film and the anode electrode on the sapphire substrate by evaporating Ti and Au. An emission current of 1 μA is obtained at an electric field strength of 16 V/μm.

  17. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  18. Stability analysis of zigzag boron nitride nanoribbons

    International Nuclear Information System (INIS)

    Rai, Hari Mohan; Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R.; Jaiswal, Neeraj K.; Srivastava, Pankaj

    2015-01-01

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  19. Processing of boron carbide-aluminum composites

    International Nuclear Information System (INIS)

    Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

    1989-01-01

    The processing problems associated with boron carbide and the limitations of its mechanical properties can be significantly reduced when a metal phase (e.g., aluminum) is added. Lower densification temperatures and higher fracture toughness will result. Based on fundamental capillarity thermodynamics, reaction thermodynamics, and densification kinetics, we have established reliable criteria for fabricating B 4 C-Al particulate composites. Because chemical reactions cannot be eliminated, it is necessary to process B 4 C-Al by rapidly heating to near 1200 degrees C (to ensure wetting) and subsequently heat-treating below 1200 degrees C (for microstructural development)

  20. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  1. Synthesis of a boron modified phenolic resin

    Directory of Open Access Journals (Sweden)

    Aparecida M. Kawamoto

    2010-08-01

    Full Text Available Phenolic resin has long been used as matrix for composites mainly because of its flame retardant behavior and high char yield after pyrolysis, which results in a self supporting structure. The addition of ceramic powders, such as SiC and B4C, as fillers to the phenolic resin, results in better thermo-oxidative stability, but as drawbacks, it has poor homogeneity, adhesion and processing difficulties during molding of the composites. The addition of single elements, such as boron, silicon and phosphorus in the main backbone of the thermo-set resin is a new strategy to obtain special high performance resins, which results in higher mechanical properties, avoiding the drawbacks of simply adding fillers, which results in enhanced thermo-oxidative stability compared to conventional phenol-formaldehyde resins. Therefore, the product can have several applications, including the use as ablative thermal protection for thermo-structural composites. This work describes the preparation of a boron-modified phenolic resin (BPR using salicyl alcohol and boric acid. The reaction was performed in refluxing toluene for a period of four hours, which produced a very high viscosity amber resin in 90% yield.The final structure of the compound, the boric acid double, substituted at the hydroxyl group of the aromatic ring, was determined with the help of the Infrared Spectroscopy, ¹H-NMR, TGA-DSC and boron elemental analysis. The absorption band of the group B-O at 1349 cm ˉ¹ can be visualized at the FT-IR spectrum. ¹H-NMR spectra showed peaks at 4.97-5.04 ppm and 3.60-3.90 ppm assigned to belong to CH2OH groups from the alcohol. The elemental analysis was also performed for boron determination.The product has also been tested in carbon and silicon fibers composite for the use in thermal structure. The results of the tests showed composites with superior mechanical properties when compared with the conventional phenolic resin.

  2. Hydrothermal synthesis of cubic boron nitride crystals

    International Nuclear Information System (INIS)

    Yu Meiyan; Cui Deliang; Kai Li; Yin Yansheng; Wang Qilong; Lei Chu

    2005-01-01

    Cubic boron nitride (cBN) crystals have been successfully synthesized by in situ hydrothermal method. In order to obtain cBN pure phase crystals, two comparative experiments were carried out. The experimental results indicated that compared to one-step in situ hydrothermal method, multi-step in situ hydrothermal method was beneficial to the synthesis of cBN. It is believed that the multi-step in situ hydrothermal method is the optimal route to synthesize pure cBN bulk crystals

  3. Boron carbide nanowires with uniform CNx coatings

    Science.gov (United States)

    Zhang, H. Z.; Wang, R. M.; You, L. P.; Yu, J.; Chen, H.; Yu, D. P.; Chen, Y.

    2007-01-01

    Boron carbide nanowires with uniform carbon nitride coating layers were synthesized on a silicon substrate using a simple thermal process. The structure and morphology of the as-synthesized nanowires were characterized using x-ray diffraction, scanning and transmission electron microscopy and electron energy loss spectroscopy. A correlation between the surface smoothness of the nanowire sidewalls and their lateral sizes has been observed and it is a consequence of the anisotropic formation of the coating layers. A growth mechanism is also proposed for these growth phenomena.

  4. Boron nitride - boron hybrid coating on uranium dioxide-gadolinium oxide fuel. Final report for the period 1 November 1996 - 1 November 1997

    International Nuclear Information System (INIS)

    Gunduz, G.

    1997-11-01

    The report describes work to develop laboratory-scale technology of the deposition of hybrid boron nitrate-metallic boron coating onto the surface of uranium dioxide ore uranium dioxide - gadolinia dioxide fuel pellets. Methods of chemical vapour deposition and plasma enhanced chemical vapour deposition were used in the Department of Chemical Engineering of the Middle East Technical University, Ankara, Turkey. An excellent adherence of boron onto the boron nitrate layer and boron nitrate layer onto the fuel pellet surface was demonstrated. Fine grain-type structure of boron coating and its excellent adherence are good indices for integrated fuel burnable absorber fuels

  5. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  6. Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2015-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

  7. Detection of boron removal capacities of different microorganisms in wastewater and effective removal process.

    Science.gov (United States)

    Laçin, Bengü; Ertit Taştan, Burcu; Dönmez, Gönül

    2015-01-01

    In this study boron removal capacities of different microorganisms were tested. Candida tropicalis, Rhodotorula mucilaginosa, Micrococcus luteus, Bacillus thuringiensis, Bacillus cereus, Bacillus megaterium, Bacillus pumilus, Pseudomonas aeruginosa and Aspergillus versicolor were examined for their boron bioaccumulation capacities in simulated municipal wastewater. A. versicolor and B. cereus were found as the most boron-tolerant microorganisms in the experiments. Also boron bioaccumulation yield of A. versicolor was 49.25% at 15 mg/L boron concentration. On the other hand biosorption experiments revealed that A. versicolor was more capable of boron removal in inactive form at the highest boron concentrations. In this paper maximum boron bioaccumulation yield was detected as 39.08% at 24.17 mg/L and the maximum boron biosorption yield was detected as 41.36% at 24.01 mg/L boron concentrations.

  8. Drug delivery system design and development for boron neutron capture therapy on cancer treatment

    International Nuclear Information System (INIS)

    Sherlock Huang, Lin-Chiang; Hsieh, Wen-Yuan; Chen, Jiun-Yu; Huang, Su-Chin; Chen, Jen-Kun; Hsu, Ming-Hua

    2014-01-01

    We have already synthesized a boron-containing polymeric micellar drug delivery system for boron neutron capture therapy (BNCT). The synthesized diblock copolymer, boron-terminated copolymers (Bpin-PLA-PEOz), consisted of biodegradable poly(D,L-lactide) (PLA) block and water-soluble polyelectrolyte poly(2-ethyl-2-oxazoline) (PEOz) block, and a cap of pinacol boronate ester (Bpin). In this study, we have demonstrated that synthesized Bpin-PLA-PEOz micelle has great potential to be boron drug delivery system with preliminary evaluation of biocompatibility and boron content. - Highlights: • Herein, we have synthesized boron-modified diblock copolymer. • Bpin-PLA-PEOz, which will be served as new boron containing vehicle for transporting the boron drug. • This boron containing Bpin-PLA-PEOz micelle was low toxicity can be applied to drug delivery

  9. The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge

    Science.gov (United States)

    Klimin, V. S.; Tominov, R. V.; Eskov, A. V.; Krasnoborodko, S. Y.; Ageev, O. A.

    2017-11-01

    In this paper, experimental studies were carried out on the formation of a microrelief on the surface of gallium arsenide substrates. The surface was modified by the method of plasma etching. Etching was carried out in a medium of chloride gas. In the work, the etching rates of the surface of gallium arsenide depend on the power of the inductively coupled plasma source. The etching rate of gallium arsenide was 28.2 nm / min, 24.9 nm / min, 27.8 nm / min, at inductively coupled plasma power values of 200 W, 400 W and 600 W. In the same work, the patterns of etching rate of gallium arsenide surface Taking into account the capacity of the capacitive plasma and the voltage of the shift. The etching rate of gallium arsenide was 516.7 nm / min, 559.5 nm / min, 603.3 nm / min, with capacitive plasma power values of 10 W, 35 W and 70 W, respectively. These results can be used to form a modified surface for the subsequent epitaxial growth of quantum dots based on gallium arsenide.

  10. β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

    Energy Technology Data Exchange (ETDEWEB)

    Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

    2013-05-08

    In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

  11. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide.

    Science.gov (United States)

    Melisi, Domenico; Nitti, Maria Angela; Valentini, Marco; Valentini, Antonio; Ligonzo, Teresa; De Pascali, Giuseppe; Ambrico, Marianna

    2014-01-01

    In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current-voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

  12. A gallium-arsenide digital phase shifter for clock and control signal distribution in high-speed digital systems

    Science.gov (United States)

    Fouts, Douglas J.

    1992-01-01

    The design, implementation, testing, and applications of a gallium-arsenide digital phase shifter and fan-out buffer are described. The integrated circuit provides a method for adjusting the phase of high-speed clock and control signals in digital systems, without the need for pruning cables, multiplexing between cables of different lengths, delay lines, or similar techniques. The phase of signals distributed with the described chip can be dynamically adjusted in eight different steps of approximately 60 ps per step. The IC also serves as a fan-out buffer and provides 12 in-phase outputs. The chip is useful for distributing high-speed clock and control signals in synchronous digital systems, especially if components are distributed over a large physical area or if there is a large number of components.

  13. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    Science.gov (United States)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  14. Terahertz emission enhancement in semi-insulating gallium arsenide integrated with subwavelength one-dimensional metal line array.

    Science.gov (United States)

    Faustino, Maria Angela B; Lopez, Lorenzo P; Pauline Afalla, Jessica; Muldera, Joselito; Hermosa, Nathaniel; Salvador, Arnel A; Somintac, Armando S; Estacio, Elmer S

    2016-10-01

    A one-order-of-magnitude terahertz (THz) emission enhancement in the transmission geometry, over a 0.7-THz broadband range, was observed in semi-insulating gallium arsenide (SI-GaAs) integrated with a subwavelength one-dimensional metal line array (1DMLA). THz emission of the 1DMLA samples showed an intensity increase and exhibited a full-width-at-half-maximum broadening relative to the emission of the bare substrate. Improved index matching could not account for the observed phenomenon. A nonlinear dependence of the integrated THz emission intensity on the number of illuminated lines and on the pump power was observed. The actual origin of the increased THz emission is still under investigation. At present, it is attributed to extraordinary optical transmission.

  15. Optical absorption and photocurrent enhancement in semi-insulating gallium arsenide by femtosecond laser pulse surface microstructuring.

    Science.gov (United States)

    Zhao, Zhen-Yu; Song, Zhi-Qiang; Shi, Wang-Zhou; Zhao, Quan-Zhong

    2014-05-19

    We observe an enhancement of optical absorption and photocurrent from semi-insulating gallium arsenide (SI-GaAs) irradiated by femtosecond laser pulses. The SI-GaAs wafer is treated by a regeneratively amplified Ti: Sapphire laser of 120 fs laser pulse at 800 nm wavelength. The laser ablation induced 0.74 μm periodic ripples, and its optical absorption-edge is shifted to a longer wavelength. Meanwhile, the steady photocurrent of irradiated SI-GaAs is found to enhance 50%. The electrical properties of samples are calibrated by van der Pauw method. It is found that femtosecond laser ablation causes a microscale anti-reflection coating surface which enhances the absorption and photoconductivity.

  16. Flame-photometric determination of boron in alloys with chromatographic separation

    International Nuclear Information System (INIS)

    Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S.

    1983-01-01

    A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation

  17. Flame-photometric determination of boron in alloys with chromatographic separation

    Energy Technology Data Exchange (ETDEWEB)

    Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S. (AN SSSR, Chernogolovka. Inst. Fiziki Tverdogo Tela)

    1983-01-01

    A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation.

  18. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  19. Microdosimetry for Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    Maughan, R.L.; Kota, C.

    2000-01-01

    The specific aims of the research proposal were as follows: (1) To design and construct small volume tissue equivalent proportional counters for the dosimetry and microdosimetry of high intensity thermal and epithermal neutron beams used in BNCT, and of modified fast neutron beams designed for boron neutron capture enhanced fast neutron therapy (BNCEFNT). (2) To develop analytical methods for estimating the biological effectiveness of the absorbed dose in BNCT and BNCEFNT based on the measured microdosimetric spectra. (3) To develop an analytical framework for comparing the biological effectiveness of different epithermal neutron beams used in BNCT and BNCEFNT, based on correlated sets of measured microdosimetric spectra and radiobiological data. Specific aims (1) and (2) were achieved in their entirety and are comprehensively documented in Jay Burmeister's Ph.D. dissertation entitled ''Specification of physical and biologically effective absorbed dose in radiation therapies utilizing the boron neutron capture reaction'' (Wayne State University, 1999). Specific aim (3) proved difficult to accomplish because of a lack of sufficient radiobiological data

  20. Boron modified molybdenum silicide and products

    International Nuclear Information System (INIS)

    Meyer, M.K.; Akinc, M.

    1999-01-01

    A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo 5 Si 3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi 2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo 5 Si 3 for structural integrity. 7 figs

  1. Boron-10 ABUNCL Prototype Initial Testing

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Ely, James H.; Lintereur, Azaree T.; Siciliano, Edward R.

    2012-12-01

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results of initial testing of an Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) design built by General Electric Reuter-Stokes. Several configurations of the ABUNCL models, which use 10B-lined proportional counters in place of 3He proportional counters for the neutron detection elements, were previously reported. The ABUNCL tested is of a different design than previously modeled. Initial experimental testing of the as-delivered passive ABUNCL was performed, and modeling will be conducted. Testing of the system reconfigured for active testing will be performed in the near future, followed by testing with nuclear fuel.

  2. Determination of boron spectrophotometry in thorium sulfate

    International Nuclear Information System (INIS)

    Federgrun, L.; Abrao, A.

    1976-01-01

    A procedure for the determination of microquantities of boron in nuclear grade thorium sulfate is described. The method is based on the extraction of BF - 4 ion associated to monomethylthionine (MMT) in 1,2 - dichloroethane. The extraction of the colored BF - 4 -MMT complex does not allow the presence of sulfuric and phosphoric acids; other anions interfere seriously. This fact makes the dissolution of the thorium sulfate impracticable, since it is insoluble in both acids. On the other hand, the quantitative separation of thorium is mandatory, to avoid the precipitation of ThF 4 . To overcome this difficulty, the thorium sulfate is dissolved using a strong cationic ion exchanger, Th 4+ being totally retained into the resin. Boron is then analysed in the effluent. The procedure allows the determination of 0.2 to 10.0 microgramas of B, with a maximum error of 10%. Thorium sulfate samples with contents of 0.2 to 2.0μg B/gTh have being analysed [pt

  3. Transport properties of polycrystalline boron doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, J.R. de [Instituto Nacional de Pesquisas Espaciais, INPE/LAS, S.J. Campos, SP 12227-010 (Brazil); Berengue, O.M. [Universidade Estadual Paulista, UNESP Departamento de Física, Guaratinguetá 12.516-410 (Brazil); Moro, J. [Instituto Federal de Educação, Ciência e Tecnologia de São Paulo, Bragança Paulista 12929-600 (Brazil); Ferreira, N.G. [Instituto Nacional de Pesquisas Espaciais, INPE/LAS, S.J. Campos, SP 12227-010 (Brazil); Chiquito, A.J. [Universidade Federal de São Carlos, Departamento de Física, São Carlos 13565-905 (Brazil); Baldan, M.R., E-mail: baldan@las.inpe.br [Instituto Nacional de Pesquisas Espaciais, INPE/LAS, S.J. Campos, SP 12227-010 (Brazil)

    2014-08-30

    Highlights: • Synthetic boron doped diamond films were grown by hot filament chemical vapor deposition. • We characterized the films by hall effects as a function of temperature and magnetic field. • The resistivity was investigated. • The conduction mechanism was dominated by variable range hopping (VRH). - Abstract: The influence of doping level in the electronic conductivity and resistivity properties of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. Eight different doping level concentrations varied from 500 to 30,000 ppm were considered. The polycrystalline morphology observed by scanning electron microscopy and Raman spectra was strongly affected by the addition of boron. The electric characterization by Hall effect as a function of temperature and magnetic field showed that at sufficiently low temperatures, electrical conduction is dominated by variable range hopping (VRH) conducting process. The resistivity was also investigated by temperature-dependent transport measurements in order to investigate the conduction mechanism in the doped samples. The samples exhibited the VRH (m = 1/4) mechanism in the temperature range from 77 to 300 K. The interface between metal, and our HFCVD diamond was also investigated for the lower doped samples.

  4. Aluminum/boron composite - fatigue life prediction

    International Nuclear Information System (INIS)

    Plumtree, A.; Glinka, G.

    2002-01-01

    The fatigue behaviour of a 6061-0 aluminum alloy reinforce with 0.25 volume fraction undirectional boron fibres of 100 μm diameter has been investigated. The specimens were tested under constant stress amplitude using a stress ratio (minimum/maximum stress) of 0.2 with the fibres oriented at an angle to the loading direction in order to study the matrix dominated fatigue behaviour. Two sets of data were obtained for unidirectional specimens tested with fibre to load axis angles of 200 and 450 A third set of data was obtained with V 45 angle-ply specimens. It is shown that a microstress/strain analysis in conjunction with a multiaxial fatigue parameter can be applied to successfully predict the fatigue lives of these boron reinforced aluminum alloy composites. The multiaxial parameter enables a generalized strain-life relationship to be determined using limited experimental data. Once this generalized relationship is known, the life of the composite cycled under different loads and load-fibre angles can be predicted. (author)

  5. The boron connection: Roots (routes), grounds, horizons

    Science.gov (United States)

    Zdetsis, Aristides D.

    2012-12-01

    Isoelectronic and isolobal silicon-based analogues to boranes and borane complexes are considered and studied. The framework and the implementation of such isoelectronic and isolobal analogies initially between silicon clusters (cluster dianions) and isovalent boranes, known under the scoptical and synoptical name "boron connection" is critically analyzed and reviewed in considerable depth and breadth, paying special attention to its conceptual simplicity, origin, and originality. It is illustrated that such a concept can be extended to several borane complexes producing analogous silicon based (nano)structures. This is achieved by considering and evaluating several vertical, horizontal and diagonal relationships on the periodical table rooted on Si. It is shown that this type of simple and transparent relationships can lead to far reaching extensions and generalizations of the "boron connection" to encompass structural and electronic relationships between additional simple and mixed clusters based in addition to Si on other group 14 elements. Such clusters include, among others, simple Gen2- and Snn2- dianions and mixed Si-Bi, Ge-Bi and Sn-Bi clusters. Special emphasis is placed on molecular and material engineering and functionalization, in analogy to similar functionalization of borane based molecules and materials. It is illustrated that this enlarged and expanded project is very promising and could be very successful for the design of a practically unlimited number of new group-14-based complexes as well as the rationalization and fictionalization of newly synthesized materials.

  6. Modeling of interstitial diffusion of ion-implanted boron

    International Nuclear Information System (INIS)

    Velichko, O.I.; Knyazheva, N.V.

    2009-01-01

    A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are created continuously during annealing due to generation, dissolution, or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. A simulation of boron redistribution during thermal annealing for 60 s at a temperature of 850 C has been carried out. The calculated profile agrees well with the experimental data. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nm. It was also obtained that approximately 1.94% of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with crystal lattice defects. (authors)

  7. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  8. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

    2000-01-01

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

  9. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  10. No evidence that boron influences tree species distributions in lowland tropical forests of Panama.

    Science.gov (United States)

    Turner, Benjamin L; Zalamea, Paul-Camilo; Condit, Richard; Winter, Klaus; Wright, S Joseph; Dalling, James W

    2017-04-01

    It was recently proposed that boron might be the most important nutrient structuring tree species distributions in tropical forests. Here we combine observational and experimental studies to test this hypothesis for lowland tropical forests of Panama. Plant-available boron is uniformly low in tropical forest soils of Panama and is not significantly associated with any of the > 500 species in a regional network of forest dynamics plots. Experimental manipulation of boron supply to seedlings of three tropical tree species revealed no evidence of boron deficiency or toxicity at concentrations likely to occur in tropical forest soils. Foliar boron did not correlate with soil boron along a local scale gradient of boron availability. Fifteen years of boron addition to a tropical forest increased plant-available boron by 70% but did not significantly change tree productivity or boron concentrations in live leaves, wood or leaf litter. The annual input of boron in rainfall accounts for a considerable proportion of the boron in annual litterfall and is similar to the pool of plant-available boron in the soil, and is therefore sufficient to preclude boron deficiency. We conclude that boron does not influence tree species distributions in Panama and presumably elsewhere in the lowland tropics. No claim to original US government works New Phytologist © 2016 New Phytologist Trust.

  11. INFLUENCE OF MICROALLOYING BY BORON ON HARDENABILITY OF STEEL

    Directory of Open Access Journals (Sweden)

    E. P. Baradyntseva

    2016-01-01

    Full Text Available The research conducted in laboratory of metallurgical science by which the factors exerting impact on hardenability of steel microalloyed by boron were analysed. The research was made because the implementation of this process in mass production is connected with the certain difficulties. The conducted researches have allowed to draw a conclusion that changing content of various chemical elements, such as nitrogen, boron, the titan and aluminum in steel containing boron, produced by JSC «BSW – Management Company of Holding «BMC» at the stage of preparation of chart flowsheet make it possible to predict terms of hardenability of the final product.

  12. Electrophoretic deposition of boron-10 in neutron detectors electrodes

    International Nuclear Information System (INIS)

    Oliveira Sampa, M.H. de; Vinhas, L.A.; Vieira, J.M.

    1990-01-01

    Process of boron-10 electrophoresis on large area of aluminum substrates was developed with the aim of using them in the construction of neutron detectors. After definition and optimization of the boron electrophoresis parameters, depositions of boron-10 on aluminum cylinders were performed and used as electrodes in gamma compensated and non-compensated ionization chambers and in proportional detectors. These prototypes were designed and builded at IPEN-CNEN-SP, and submited for characterization tests at IEA-R1 reactor, and they fulfil the technical specifications of the project. (author) [pt

  13. Photometric and emission-spectrometric determination of boron in steels

    International Nuclear Information System (INIS)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated. (orig.) [de

  14. Hugoniot equation of state and dynamic strength of boron carbide

    Science.gov (United States)

    Grady, Dennis E.

    2015-04-01

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20-60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable mechanistic

  15. Photoelectron spectroscopy of boron aluminum hydride cluster anions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haopeng; Zhang, Xinxing; Ko, Yeon Jae; Gantefoer, Gerd; Bowen, Kit H., E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Li, Xiang [Center for Space Science and Technology, University of Maryland–Baltimore County, Baltimore, Maryland 21250 (United States); Kiran, Boggavarapu, E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry and Physics, McNeese State University, Lake Charles, Louisiana 70609 (United States); Kandalam, Anil K. [Department of Physics, West Chester University, West Chester, Pennsylvania 19383 (United States)

    2014-04-28

    Boron aluminum hydride clusters are studied through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations. Boron aluminum hydride cluster anions, B{sub x}Al{sub y}H{sub z}{sup −}, were generated in a pulsed arc cluster ionization source and identified by time-of-flight mass spectrometry. After mass selection, their photoelectron spectra were measured by a magnetic bottle-type electron energy analyzer. The resultant photoelectron spectra as well as calculations on a selected series of stoichiometries reveal significant geometrical changes upon substitution of aluminum atoms by boron atoms.

  16. Photoelectron spectroscopy of boron aluminum hydride cluster anions.

    Science.gov (United States)

    Wang, Haopeng; Zhang, Xinxing; Ko, Yeon Jae; Gantefoer, Gerd; Bowen, Kit H; Li, Xiang; Kiran, Boggavarapu; Kandalam, Anil K

    2014-04-28

    Boron aluminum hydride clusters are studied through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations. Boron aluminum hydride cluster anions, BxAlyHz(-), were generated in a pulsed arc cluster ionization source and identified by time-of-flight mass spectrometry. After mass selection, their photoelectron spectra were measured by a magnetic bottle-type electron energy analyzer. The resultant photoelectron spectra as well as calculations on a selected series of stoichiometries reveal significant geometrical changes upon substitution of aluminum atoms by boron atoms.

  17. Coordination Networks Based on Boronate and Benzoxaborolate Ligands

    Directory of Open Access Journals (Sweden)

    Saad Sene

    2016-05-01

    Full Text Available Despite the extensive range of investigations on boronic acids (R-B(OH2, some aspects of their reactivity still need to be explored. This is the case for the coordination chemistry of boronate anions (R-B(OH3−, which has only recently been started to be studied. The purpose of this review is to summarize some of the key features of boronate ligands (and of their cyclic derivatives, benzoxaborolates in materials: (i coordination properties; (ii spectroscopic signatures; and (iii emerging applications.

  18. Kinetics of chemical vapor deposition of boron on molybdenum

    International Nuclear Information System (INIS)

    Tanaka, W.; Nakaanishi, N.; Kato, E.

    1987-01-01

    Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

  19. Determination of boron in silicon related nuclear materials by spectrophotometry

    International Nuclear Information System (INIS)

    Ramanjaneyulu, P.S.; Sayi, Y.S.; Ramakumar, K.L.

    2007-01-01

    Boron is one of the important specifications in all-nuclear materials. The present paper describes in detail about the determination of boron in U-Al-Si and SILUMIN. The sample is treated with H 2 O 2 and 3 M HCl. Silicon will be left as precipitate. It was removed by centrifugation. Boron was selectively separated by solvent extraction with 10% 2-ethyl hexane 1,3-diol and was quantitatively determined by spectrophotometry using curcumin as complexing agent. Since standard reference materials are not available, standard addition method was employed to confirm the results. (author)

  20. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2-5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1-5 W cm-2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  1. First Principles Atomistic Model for Carbon-Doped Boron Suboxide

    Science.gov (United States)

    2014-09-01

    Sutherland DG, Van Buuren T, Carlisle JA, Terminello LJ, Himpsel FJ. Photoemission and x - ray -absorption study of boron carbide and its surface thermal...along the C-C chain. If the interstitial dopant is either B or C, a local boron carbide (B4C)-like structure with either a C-B-C or C-C-C chain is...strength, high oxidation resistance (򒱰 °C), and chemical inertness.1–8 However, unlike other high-performance ceramics, boron carbide (B4C) and

  2. Click Reactions and Boronic Acids: Applications, Issues, and Potential Solutions

    Directory of Open Access Journals (Sweden)

    Chaofeng Dai

    2010-08-01

    Full Text Available Boronic acids have been widely used in a wide range of organic reactions, in the preparation of sensors for carbohydrates, and as potential pharmaceutical agents. With the growing importance of click reactions, inevitably they are also applied to the synthesis of compounds containing the boronic acid moiety. However, such applications have unique problems. Chief among them is the issue of copper-mediated boronic acid degradation in copper-assisted [2,3]-cycloadditions involving an alkyne and an azido compound as the starting materials. This review summarizes recent developments, analyzes potential issues, and discusses known as well as possible solutions.

  3. Photometric and emission-spectrometric determination of boron in steels

    Energy Technology Data Exchange (ETDEWEB)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated.

  4. On certain topological indices of boron triangular nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aslam, Adnan [Univ. of Engineering and Technology, Lahore (Pakistan). Dept. of Natural Sciences and Humanities; Ahmad, Safyan [GC Univ. Lahore (Pakistan). Abdus Salam School of Mathematical Sciences; Gao, Wei [Yunnan Normal Univ., Kunming (China). School of Information Science and Technology

    2017-11-01

    The topological index gives information about the whole structure of a chemical graph, especially degree-based topological indices that are very useful. Boron triangular nanotubes are now replacing usual carbon nanotubes due to their excellent properties. We have computed general Randic (R{sub a}), first Zagreb (M{sub 1}) and second Zagreb (M{sub 2}), atom-bond connectivity (ABC), and geometric-arithmetic (GA) indices of boron triangular nanotubes. Also, we have computed the fourth version of atom-bond connectivity (ABC{sub 4}) and the fifth version of geometric-arithmetic (GA{sub 5}) indices of boron triangular nanotubes.

  5. Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

  6. Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

    International Nuclear Information System (INIS)

    Slack, G.A.; Rosolowski, J.H.; Miller, M.L.; Huseby, I.C.

    1984-12-01

    The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B 68 Y, α-B 12 Al, B 4 C, and B 6 Si are described. Transition metals appear to be effective dopants for B 68 Y and B 4 C

  7. Genotypic effects on boron concentrations and response on boron fertilization in maize inbred lines

    Directory of Open Access Journals (Sweden)

    Andrić Luka

    2016-01-01

    Full Text Available Boron (B deficiency in maize can result in barren cobs attributed to silks being nonreceptive which is particularly important for the female parent in seed production. The objectives of this study were 1 to investigate genotypic differences among nine female inbred lines used in seed production for B concentration in ear-leaf and grain, as well as for grain yield and moisture in a three-year experiment (2006-2008 and 2 to determine response and relations among the traits when four of the female inbred lines are treated by foliar boron fertilization - three times in 10-days interval with 0.5% Solubor solution (17.5% B during one growing season (2008. The investigations were performed on Experimental field of Agricultural Institute Osijek, (soil type: eutrical cambisol. Highly significant differences among the nine female inbred lines were detected for B concentration in ear-leaf (from 14.7 to 46.7 mg B kg-1 and grain (from 1.20 to 2.06 mg B kg-1 as well as for grain yield (from 3.33 to 4.83 t ha-1 and grain moisture (from 14.7% to 26.6%. However, there were also significant effects of growing season and the genotype by environment interaction for all four traits. Positive and moderate correlations were found between the boron status in plant and grain yield. Although B concentrations were considerably increased by foliar boron fertilization (averages 41.7 and 125.3 mg B kg-1 in leaves, 1.79 and 2.80 mg B kg-1 in grain, for control and fertilization, respectively, in general grain yield differences among treatments were non-significant. (averages 5.21 and 5.15 t ha-1, respectively.

  8. Genotypic effects on boron concentrations and response on boron fertilization in maize inbred lines

    OpenAIRE

    Andrić Luka; Kovačević Vlado; Kadar Imre; Jambrović Antun; Plavšić Hrvoje; Šimić Domagoj

    2016-01-01

    Boron (B) deficiency in maize can result in barren cobs attributed to silks being nonreceptive which is particularly important for the female parent in seed production. The objectives of this study were 1) to investigate genotypic differences among nine female inbred lines used in seed production for B concentration in ear-leaf and grain, as well as for grain yield and moisture in a three-year experiment (2006-2008) and 2) to determine response and relation...

  9. B-decachloro-o-carborane derivatives as suitable boron carriers for the preparation of water-soluble boron-conjugated macromolecules

    International Nuclear Information System (INIS)

    Gabel, D.; Walczyna, R.; Wellmann, F.; Riesenberg, H.; Hocke, I.

    1982-01-01

    The preparation of boron-containing macromolecules, especially immunoglobulins, for boron neutron capture therapy, has so far been rather unsuccessful, because of the increased water insolubility of heavily substituted proteins. By using polar boron compounds, some of the difficulties previously encountered in the preparation of boron-conjugated immunoglobulins might be overcome. To this end, the authors have investigated the use of B-decachloro-o-carborane (B 10 Cl 10 C 2 H 2 ) for the preparation of water-soluble macromolecules

  10. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    Kitaoka, Yoshinori

    1993-09-01

    This volume contains the proceedings of the 5th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 22 in 1993. The solubility of the boron carrier play an important role in the BNCT. New water-soluble p-boronophenylalanine derivatives are synthesized and their biological activities are investigated (Chap. 2 and 3). Some chemical problems on the BNCT were discussed, and the complex formation reaction of hydroxylboryl compounds were studied by the paper electrophoresis (Chap. 4). The results of the medical investigation on the BNCT using BSH compounds are shown in Chap. 5. Syntheses of o- and m-boronophenylalanine were done and their optical resolution was tried (Chap. 6). The complex formation reaction of p-boronophenylalanine (BPA) with L-DOPA and the oxidation reaction of the analogs are found in Chap. 7. The pka of BPA were determined by the isotachophoresis (Chap. 8). The chemical nature of dihydroxyboryl compounds were investigated by an infrared spectroscopy and electrophoresis (Chap. 9). New synthetic methods of BPA and p-boronophenylserine using ester of isocyanoacetic acid are described in Chap. 10. The induction of chromosomal aberations by neutron capture reaction are discussed from a point of the biological view. The a of the presented papers are indexed individually. (J.P.N.)

  11. Novel boron channel-based structure of boron carbide at high pressures

    Science.gov (United States)

    Zhang, Xinxin; Zhao, Yu; Zhang, Miao; Liu, Hanyu; Yao, Yansun; Cheng, Taimin; Chen, Hui

    2017-11-01

    Boron carbide (B4C) is one of the hardest materials known to date. The extreme hardness of B4C arises from architecturally efficient B12 or B11C icosahedrons and strong inter-icosahedral B-C bonding. As an excellent material for use in ballistic armor, the mechanic limit of B4C and possible phase transitions under extreme stress conditions are of great interest. Here we systematically explored the post-icosahedral solid structures of B4C under high pressure, using an unbiased structure search method. A new structure composed of extended framework of B and zigzag chains of C is predicted to be stable above 96 GPa. The new structure was predicted to have a high Vickers hardness of 55 GPa and simultaneously to retain a metallic ground state. The exceptional mechanical properties found in this structure are attributed to strong sp 3 covalent network formed under extreme pressure conditions. The predicted structure represents a new type of superhard boron carbides that form under high pressure without the presence of boron icosahedrons, which encourages experimental exploration in this direction.

  12. Biocompatibility of functionalized boron phosphate (BPO4) nanoparticles for boron neutron capture therapy (BNCT) application.

    Science.gov (United States)

    Achilli, Cesare; Grandi, Stefania; Ciana, Annarita; Guidetti, Gianni F; Malara, Alessandro; Abbonante, Vittorio; Cansolino, Laura; Tomasi, Corrado; Balduini, Alessandra; Fagnoni, Maurizio; Merli, Daniele; Mustarelli, Piercarlo; Canobbio, Ilaria; Balduini, Cesare; Minetti, Giampaolo

    2014-04-01

    Boron neutron capture therapy (BNCT) is a radiotherapy treatment based on the accumulation in the tumor of a (10)B-containing drug and subsequent irradiation with low energy neutrons, which bring about the decay of (10)B to (7)Li and an α particle, causing the death of the neoplastic cell. The effectiveness of BNCT is limited by the low delivery and accumulation of the used boron-containing compounds. Here we report the development and the characterization of BPO4 nanoparticles (NPs) as a novel possible alternative drug for BNCT. An extensive analysis of BPO4 NP biocompatibility was performed using both mature blood cells (erythrocytes, neutrophils and platelets) and a model of hematopoietic progenitor cells. A time- and concentration-dependent cytotoxicity study was performed on neoplastic coloncarcinoma and osteosarcoma cell lines. BPO4 functionalization with folic acid, introduced to improve the uptake by tumor cells, appeared to effectively limit the unwanted effects of NPs on the analyzed blood components. Boron neutron capture therapy (BNCT) is a radiotherapy treatment modality based on the accumulation of a (10)B-containing drug and subsequent irradiation with low energy neutrons, inducing the decay of (10)B to (7)Li and an α particle, causing neoplastic cell death. This team of authors reports on a folic acid functionalized BPO4 nanoparticle with improved characteristics compared with conventional BNCT approaches, as demonstrated in tumor cell lines, and hopefully to be followed by translational human studies. © 2014.

  13. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Seibt, M. [Universität Göttingen, IV Physikalisches Institut (Germany); Kazakov, I. P.; Tsikunov, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  14. High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2008-01-01

    High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

  15. High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-11-17

    High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

  16. Preparation and characterization of Boron carbide nanoparticles for use as a novel agent in T cell-guided boron neutron capture therapy

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Sørensen, P. G.; Björkdahl, O.

    2006-01-01

    Boron carbide nanoparticles are proposed as a system for T cell-guided boron neutron capture therapy. Nanoparticles were produced by ball milling in various atmospheres of commercially available boron carbide. The physical and chemical properties of the particles were investigated using...

  17. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  18. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-03

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.

  19. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  20. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.