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Sample records for boron arsenides

  1. First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2013-07-01

    We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000Wm-1K-1; this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

  2. Ab initio study of the unusual thermal transport properties of boron arsenide and related materials

    Science.gov (United States)

    Broido, D. A.; Lindsay, L.; Reinecke, T. L.

    2013-12-01

    Recently, using a first principles approach, we predicted that zinc blende boron arsenide (BAs) will have an ultrahigh lattice thermal conductivity, κ, of over 2000 Wm-1K-1 at room temperature (RT), comparable to that of diamond. Here, we provide a detailed ab initio examination of phonon thermal transport in boron arsenide, contrasting its unconventional behavior with that of other related materials, including the zinc blende crystals boron nitride (BN), boron phosphide, boron antimonide, and gallium nitride (GaN). The unusual vibrational properties of BAs contribute to its weak phonon-phonon scattering and phonon-isotope scattering, which are responsible for its exceptionally high κ. The thermal conductivity of BAs has contributions from phonons with anomalously large mean free paths (˜2 μm), two to three times those of diamond and BN. This makes κ in BAs sensitive to phonon scattering from crystal boundaries. An order of magnitude smaller RT thermal conductivity in a similar material, zinc blende GaN, is connected to more separated acoustic phonon branches, larger anharmonic force constants, and a large isotope mixture on the heavy rather than the light constituent atom. The striking difference in κ for BAs and GaN demonstrates the importance of using a microscopic first principles thermal transport approach for calculating κ. BAs also has an advantageous RT coefficient of thermal expansion, which, combined with the high κ value, suggests that it is a promising material for use in thermal management applications.

  3. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

    International Nuclear Information System (INIS)

    The thermal conductivity of icosahedral boron arsenide (B12As2) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3ω technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 deg. C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 μV/K and 136 μV/K for samples grown at 1350 deg. C with AsH3/B2H6 flow ratio equals to 1:1 and 3:5, respectively.

  4. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    Science.gov (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  5. Gallium Arsenide

    Science.gov (United States)

    Brozel, Mike

    The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as "the semiconductor of the future, and it will always be that way." Recently, however, advances in compact-disc (CD) technology, fibre-optic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets.

  6. Boron

    International Nuclear Information System (INIS)

    The trace element boron (B) is of interest in reclamation situations for several reasons. It plays an essential through largely unidentified role in the growth of higher plants. In argronomic situations B deficiencies are common, and deficiencies in reclamation situations have been suggested but not documented. Among micronutrients, B is unique because the range from deficient concentrations to toxic concentrations either in the soil solution or in plant tissue is narrower than for any other micronutrient. In reclamation situations excessive amounts of B can occur in the soil or in near-surface mining wastes and thus interfere with reclamation objectives, especially in arid and semiarid regions. Also, B is mobile and appears subject to both upward transport (and possible contamination of overlying material) and downward transport (and possible contamination of surface water and groundwater)

  7. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  8. Indentation fracture of gallium arsenide

    OpenAIRE

    Pouvreau, Cédric; GIOVANOLA, Jacques; Breguet, Jean-Marc

    2008-01-01

    The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated during the breaking step, along preferential {110} cleavage planes of GaAs. The main drawback of the scribing process is that it generates a lot of undesirable cracks and particles that degrade the performances of devices. In this dissertation, ...

  9. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  10. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  11. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    Science.gov (United States)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  12. A terminal molybdenum arsenide complex synthesized from yellow arsenic.

    Science.gov (United States)

    Curley, John J; Piro, Nicholas A; Cummins, Christopher C

    2009-10-19

    A terminal molybdenum arsenide complex is synthesized in one step from the reactive As(4) molecule. The properties of this complex with its arsenic atom ligand are discussed in relation to the analogous nitride and phosphide complexes. PMID:19764796

  13. Gallium arsenide p-type low temperature thermometers

    International Nuclear Information System (INIS)

    The use of p-type gallium arsenide for resistance thermometry is discussed. This semiconductor can be used for creating a family of thermometers with sufficiently small magnetoresistance and high sensitivity for the 0.3 - 350 K range. Performance characteristics of gallium arsenide doped with zinc, cadmium and manganese in the 1016 - 1018 cm-3 range of concentration and magnetoresistance in fields of up to 5T are examined. (author)

  14. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  15. Electroextraction of boron from boron carbide scrap

    International Nuclear Information System (INIS)

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron (10B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of 10B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron

  16. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  17. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  18. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  19. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    Science.gov (United States)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  20. Determination of boron content in boron carbide, boron nitride and amorphous boron

    International Nuclear Information System (INIS)

    In the present article an analyzing method of determination of boron content in boron carbide, boron nitride and amorphous boron described. Examined samples were digested with potassium hydroxide and potassium nitrate in nickel crucible and the boron contents determined subsequently by an alcalimetric titration of boric acid in presence of mannite resp. sorbite. (author)

  1. Gallium interstitial contributions to diffusion in gallium arsenide

    OpenAIRE

    Schick, J. T.; Morgan, C. G.; Papoulias, P

    2011-01-01

    Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \\emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are dete...

  2. Plasma chemical etching of gallium arsenide in chlorine

    International Nuclear Information System (INIS)

    One of the most promising methods, used for the examination of the kinetics and determination of the moments of the start and completion of the processes of plasma chemical etching of a wide range of inorganic materials is optical emission spectroscopy. Therefore, the aim of this work was to examine the kinetic relationships of etching of gallium arsenide in chlorine plasma and determine the possibilities of the optical emission spectroscopy for examination and control of the process

  3. Elementary boron and metal-boron compounds

    International Nuclear Information System (INIS)

    Elementary boron is of interest for its peculiar and difficult bonding behaviour in solids. Due to its high oxygen affinity we find no elementary boron in nature. For the same reason it is difficult to isolate pure, elementary boron, and much confusion about 'boron crystals' has been the result of more than 100 years of research. The polymorphic forms of elementary boron and its closely related higher carbides and higher metal borides as well as the simple metal borides, B3C and BN are reported. The quantum-mechanical background responsible for structure and stoichiometry of these crystals is given. (orig.)

  4. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  5. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  6. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  7. Point defects and electric compensation in gallium arsenide single crystals

    International Nuclear Information System (INIS)

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated

  8. Sputtering behavior of boron and boron carbide

    International Nuclear Information System (INIS)

    Sputtering yields of boron were measured with D+ and B+ ions for normal and oblique angles of incidence. Self-sputtering data of boron carbide were simulated in the experiment by using Ne+ ions. The energies of the impinging ions were between 20 eV and 10 keV. The measured data are compared with computer simulated values calculated with the TRIMSP program. The boron data for normal ion impact are higher than the calculated values, whereas those for oblique ion incidence are smaller than the calculation predicts. This discrepancy is explained by the surface roughness and supported by SEM micrographs. The comparison of the boron carbide data with TRIMSP calculations shows much better agreement than the boron data. In this case the target surface was much smoother. (orig.)

  9. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  10. Mass spectrometric determination of boron isotope in boron carbide

    International Nuclear Information System (INIS)

    Boron isotopes in boron carbide are measured by thermionic ionization mass spectrometry with no prior chemical separation. Boron is converted to sodium borate by fusion of the boron carbide with sodium hydroxide (or sodium carbonate) directly on the rhenium filament. The boron isotopic ratios are measured by using the Na2BO2+ ion

  11. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  12. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  13. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    OpenAIRE

    Guha, Biswarup; Marsault, Felix; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control o...

  14. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    International Nuclear Information System (INIS)

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of AlxGa1-xAs. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10-12 amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10-11 amps cm-2, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles FR-om 241-Americium. These radiation-induced currents were as high as 9.78 x 10-7 A cm-1 on a PIN device with an AlxGa1-xAs BSF. Simple PIN diodes had currents as high as 2.44 x 10-7 A cm-2, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 (micro)m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise characteristics than did the Schottky barrier design. Uniformity of

  15. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; Agee, C. B.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approx.576-867 C. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Metallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120deg triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3+, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  16. Determination of boron and silicon in boron carbide

    International Nuclear Information System (INIS)

    A sodium carbonate fusion technique for the dissolution of boron carbide followed by the determination of boron by alkalimetric titration and silicon impurity by spectrophotometry is described. The elemental boron content in the commercially available boron carbide ranged from 77.2 to 77.60 % and the silicon in the range 1170 to 2500 ppm. (author)

  17. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  18. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  19. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan

    2009-10-01

    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  20. Greyscale proton beam writing in p-type Gallium Arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Diering, D., E-mail: david.diering@gmx.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Spemann, D., E-mail: spemann@uni-leipzig.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Lenzner, J.; Müller, St.; Böntgen, T.; Wenckstern, H. von [Universität Leipzig, Institute for Experimental Physics II, Semiconductor Physics Group, Linnéstr. 5, 04103 Leipzig (Germany)

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×10{sup 14} H{sup +} cm{sup −2} to 1.0×10{sup 18} H{sup +} cm{sup −2} at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×10{sup 15} H{sup +} cm{sup −2} and 1.2×10{sup 17} H{sup +} cm{sup −2}, respectively. We observed an increasing etching rate for fluences larger than 10{sup 16} H{sup +} cm{sup −2}.

  1. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    Science.gov (United States)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  2. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  3. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  4. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  5. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  6. Spontaneous atomic ordering in MOVPE grown gallium arsenide antimonide

    Science.gov (United States)

    Jiang, Weiyang

    process. It is unlikely that the ordering mechanism is similar to the dimer-induced strain models that have been successfully used to explain CuPt ordering in InGaP. We propose a simple model based on alternating incorporation of group V adatoms at step edges. Keywords. GaAsSb; MOVPE; Bi surfactant; TEM; CuAu ordering. Subject. Gallium Arsenide Antimonide; Metalorganic Vapor-phase Epitaxy; Bismuth Surfactant; Transmission Electron Microscopy; CuAu Ordering.

  7. Gallium arsenide integrated optical devices for high-speed diagnostic systems

    International Nuclear Information System (INIS)

    The design, fabrication, and evaluation of waveguide electro-optic modulators in gallium arsenide for application to high-speed diagnostic systems are discussed specifically. This paper is focused on high bandwidth, single event analog modulation, and radiation susceptibility of these devices

  8. Light transport through disordered layers of dense gallium arsenide submicron particles

    NARCIS (Netherlands)

    Van der Beek, T.; Barthelemy, P.J.C.; Johnson, P.M.; Wiersma, D.S.; Lagendijk, A.

    2012-01-01

    We present a study of optical transport properties of powder layers with submicrometer, strongly scattering gallium arsenide (GaAs) particles. Uniform, thin samples with well controlled thicknesses were created through the use of varying grinding times, sedimentation fractionation, annealing, and a

  9. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  10. Magnetron sputter deposition of boron and boron carbide

    International Nuclear Information System (INIS)

    The fabrication of X-ray optical coatings with greater reflectivity required the development of sputter deposition processes for boron and boron carbide. The use of high density boron and boron carbide (B4C) and a vacuum-brazed target design was required to achieve the required sputter process stability and resistance to the thermal stress created by high rate sputtering. Our results include a description of the target fabrication procedures and sputter process parameters necessary to fabricate B4C and boron modulated thin film structures. (orig.)

  11. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  12. Biological availability of nickel arsenides: toxic effects of particulate Ni/sub 5/As/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Gurley, L.R.; Tobey, R.A.; Valdez, J.G.; Halleck, M.S.; Barham, S.S.

    1981-01-01

    Considerations of (1) oil shale retort operating conditions, (2) oil shale elemental composition, (3) nickel and arsenic physico-chemical properties, and (4) oil shale matrix structure lead to the suggestion that nickel arsenides may be formed during the oil shale retorting process. The biological effects of nickel arsenides have not been previously studied. However, similarities between nickel subarsenide and nickel subsulfide and nickel subselenimide, both of which are known potent carcinogens, have caused concern that nickel arsenides may have adverse effects on biological systems. To determine if fugitive nickel arsenides from an oil shale retort could pose a threat to personnel in the workplace or to other living organisms in the environment, a program to study the toxicity of nickel arsenides has been initiated. Five stable nickel arsenides (Ni/sub 5/As/sub 2/, Ni/sub 2/As, Ni/sub 11/As/sub 8/, NiAs, and NiAs/sub 2/) and nickel arsenic sulfide (NiAsS) are considered possible species for study.

  13. Boron cures cancer

    International Nuclear Information System (INIS)

    In this work the authors cite a few examples of the use of radiopharmaceuticals for diagnostic and therapeutic purposes in nuclear medicine. They point to the possibility of boron neutron capture therapy and the use for the neutron capture therapy of other light elements.

  14. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  15. Process for microwave sintering boron carbide

    International Nuclear Information System (INIS)

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy

  16. Suppression of decoherence in gallium arsenide multiple quantum wells by means of bang-bang control

    Energy Technology Data Exchange (ETDEWEB)

    Takasago, K. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)], E-mail: takasago.k.aa@m.titech.ac.jp; Ogawa, Y.; Minami, F. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)

    2008-05-15

    We performed a three-pulse six-wave mixing (SWM) measurement on a gallium arsenide (GaAs) multiple quantum well and observed the time-resolved SWM signal using the heterodyne detection technique. The second pulse acts as a {pi} pulse that reverses the time evolution of the non-Markovian dynamics. By changing the pulse interval conditions, we confirmed the suppression of exciton decoherence by {pi} pulse irradiation (bang-bang control)

  17. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  18. Sintered boron, production and properties

    International Nuclear Information System (INIS)

    Microhardness HV, tensile properties and Young modulus of sintered boron of different porosity were studied. It was shown that with density growth tensile properties improve. HV and brittle-ductile transition temperature Tsub(b) of sintered boron on the one hand and for silicon and titanium carbide on the other were compared and discussed. It was noted that the general level of HV and Tsub(b) for boron is rather high and at similar relative temperatures these characteristics are much higher. Temperature dependences of linear expansion coefficient, thermal capacity, thermal and temperature conductivity of sintered boron of 20% porosity were studied. Gruneisen parameter was evaluated

  19. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties. PMID:19687534

  20. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    H sensing, we apply the same to a more complex system - proteins. The sensing protocol involves the functionalization of the sensor surface with a receptor protein followed by the addition of the protein of interest. Sensor response to oppositely charged proteins is used to confirm the sensitivity of the......With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...... remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss the...

  1. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review

    International Nuclear Information System (INIS)

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding aresenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolities, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the aresnic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  2. Boron thermal regeneration system

    International Nuclear Information System (INIS)

    An ion exchanger which allows flow in both directions along a selected flow path is described. A separator plate divides the exchanger tank into two chambers each of which has a flow conduit so that flow may enter or leave from either chamber while prohibiting the resin particles from migrating from one side of the tank to the other. This ion exchanger permits a dual-directional flow process to be practised which results in immediate changes in the boron concentration within a nuclear reactor coolant system even if the ion exchanger resins have not been completely equilibrated during a previous operation. (author)

  3. BORONIZING OF STEEL

    Directory of Open Access Journals (Sweden)

    Arzum ULUKÖY

    2006-02-01

    Full Text Available Boride layer has many advantages in comparison with traditional hardening methods. The boride layer has high hardening value and keeps it's hardeness at high temperatures, and it also shows favorible properties, such as the resistance to wear, oxidation and corrosion. The process can be applied at variety of materials, for instance steel, cast iron, cast steel, nickel and cobalt alloys and cermets. In this rewiew, boronizing process properties, boride layer on steel surfaces and specifications and the factors that effect boride layer are examined

  4. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    International Nuclear Information System (INIS)

    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  5. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  6. An examination of the reactive sputtering of silicon nitride on to gallium arsenide

    International Nuclear Information System (INIS)

    The deposition of silicon nitride thin films by the reactive sputtering of elemental silicon in a nitrogen/argon plasma has been investigated. The composition of the films has been examined using infra-red reflectance, X-ray photoelectron and Auger electron spectroscopies and spark source mass spectrometry. Oxygen has been found to be a major contaminant in these sputter deposited films, the oxygen concentration depending on the ambient gas pressure. The use of the silicon oxy-nitride films as annealing encapsulants for the activation of silicon ion implanted semi-insulating gallium arsenide has also been investigated. (author)

  7. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  8. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  9. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  10. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study

    Science.gov (United States)

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Statistical Analysis Used: Paired “t” test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. Results: The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. Conclusions: The power setting that gave statistically significant results was 3.5 watts. PMID:27099427

  11. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    The atomic structure and the lattice dynamics of α boron and of B4C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B4C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  12. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  13. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  14. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  15. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  16. NMR studies on the new iron arsenide superconductors including the superconducting state

    International Nuclear Information System (INIS)

    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO1-xFxFeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T3 behaviour of the spin lattice relaxation rate, 1/T1, at temperatures significantly below Tc, which would agree with the suggested extended s-wave symmetry. The deviation of the T3 behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T1, which would allow to differentiate between d-wave and extended s-wave symmetries.

  17. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)

    2013-07-01

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  18. Gallium arsenide quantum well-based far infrared array radiometric imager

    Science.gov (United States)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  19. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  20. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong

    2016-01-01

    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  1. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor.

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra [Cambridge University; Gillett, J [Cambridge University; Harrison, N [Los Alamos National Laboratory (LANL); Lau, P H C [Cambridge University; Singh, David J [ORNL; Mielke, C H [Los Alamos National Laboratory (LANL); Lonzarich, G G [Cambridge University

    2008-01-01

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}--which is an antiferromagnetic parent of the iron arsenide family of superconductors--known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state.

  2. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G [Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge CB3 OHE (United Kingdom); Harrison, N; Mielke, C H [NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, NM 87545 (United States); Singh, D J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)], E-mail: suchitra@phy.cam.ac.uk

    2008-10-22

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}-which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

  3. Development of a dome Fresnel lens/gallium arsenide photovoltaic concentrator for space applications

    Science.gov (United States)

    O'Neill, Mark J.; Piszczor, Michael F.

    1987-01-01

    A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.

  4. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    International Nuclear Information System (INIS)

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A1-xKxFe2-yTyAs2 (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  5. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  6. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  7. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  8. Wettability of boron carbide

    International Nuclear Information System (INIS)

    The wettability of boron carbide has been examined by means of the sessile drop method, using the following candidate alloys: (96wt%AG-4wt%Ti), (Ag-26.5wt%Cu-3wt%Ti), (Sn-10wt%Ag-4wt%Ti), Sn(99.95wt%) and Al(99.99wt%). The results show that B4C is completely wetted by the Ag-based alloys. Sn-10wt%Ag-4wt%Ti alloy and pure Al partly wet the B4C surface, while pure Sn does not wet B4C at all. For all the alloys used, except pure Sn, a reaction layer was observed at the interface between the ceramic part and the metal drop. Although the spreading kinetics of the Al-drop was much slower compared with the Ti-containing alloys, the reaction rate was considerably higher in the former case. This suggests that aluminium is an attractive candidate material for brazing of B4C. Formation of the low melting B2O3 at the B4C surface may cause oxidation of the filler metal during joining, which, in turn, leads to a low bond strength

  9. Thermal conductivity of boron carbide-boron nitride composites

    International Nuclear Information System (INIS)

    This paper reports that because of their preferred orientation, the addition of boron nitride dispersions to hot-pressed boron carbide was found to result in a considerable degree of anisotropy in thermal conductivity of the resulting composite, indicated by an increase in the thermal conductivity perpendicular to the hot-pressing direction by as much as a factor of 3 at the highest boron nitride volume fractions of this study, and a decrease in the thermal conductivity parallel to the hot-pressing direction by as much as a factor of 2. The composite data were found to be below the values expected from composite theory, which may represent indirect evidence for the existence of an interfacial thermal barrier

  10. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  11. Boron carbide nanolumps on carbon nanotubes

    Science.gov (United States)

    Lao, J. Y.; Li, W. Z.; Wen, J. G.; Ren, Z. F.

    2002-01-01

    Boron carbide nanolumps are formed on the surface of multiwall carbon nanotubes by a solid-state reaction between boron and carbon nanotubes. The reaction is localized so that the integrity of the structure of carbon nanotubes is maintained. Inner layers of multiwall carbon nanotubes are also bonded to boron carbide nanolumps. These multiwall carbon nanotubes with boron carbide nanolumps are expected to be the ideal reinforcing fillers for high-performance composites because of the favorable morphology.

  12. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  13. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  14. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  15. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe2B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  16. Shear amorphization of boron suboxide

    International Nuclear Information System (INIS)

    We report for the first time the shear-induced local amorphization of boron suboxide subjected to nanoindentation. The amorphous bands have a width of ∼1–3 nm and a length of 200–300 nm along the (01¯11) crystal plane. We show direct experimental evidence that the amorphous shear bands of boron suboxide are driven from the coalescence of dislocation loops under high shear stresses. These observations provide insights into the microscopic deformation and failure of high-strength and lightweight ceramics

  17. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  18. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  19. About some methods of obtaining of cheap gallium arsenide photo converters and solar batteries on their base

    International Nuclear Information System (INIS)

    The article presents the talk on some methods of obtaining cheap gallium arsenide photo-converters and solar batteries on their basis given at the International Workshop on applied solar energy held in Tashkent (Uzbekistan) in June 1997. The technology elaborated permits to obtain solar cells with efficiency of photo-conversion up to 20%. The electrical and photoelectrical properties of obtained cells were investigated. The elaborated solar cells are used in portable devices working in field conditions. (A.A.D.)

  20. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B+, the threshold implantation dose which leads to BED lies between 3 x 1014 and of 1 x 1015/cm-2. Formation of the shallowest possible junctions by 0.5 keV B+ requires that the implant dose be kept lower than this threshold

  1. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  2. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  3. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  4. Boron sorption characteristics in resins

    International Nuclear Information System (INIS)

    The purpose of boron addition in a nuclear power plant is to control the reactivity. In PHWRs, it is injected into the moderator system in the form of boric anhydride solution, while in PHWRs, it is added to the primary heat transport system in the form of boric acid solution. The required boron levels in PHWRs are controlled by valving in strong base anion exchangers having exchangeable species in OD- form while in PHWRs, the same can be achieved by restoring to the use of Boron Thermal Regeneration System (BTRS). This system operates on the principle of existence of different amounts of various polyborate ions at different temperatures, solution pH's and the boric acid concentrations and on the reversible sorption of these polyions on strong base anion exchange resins. This report describes the salient features of boron sorption characteristics on four types of anion exchange resins, based on experimental data generated in the chemical laboratories of Reactor Engineering Division of the Bhabha Atomic Research Centre, Bombay. The report further makes an attempt to calculate the pH of the resin and solution phases and the percentages of different polyborates and undissociated boric acid, under the experimental conditions investigated. (author). 30 refs., 4 figs., 20 tables

  5. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution. PMID:22945740

  6. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  7. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  8. Carbon doping of gallium arsenide and reflectance difference spectroscopy of compound semiconductors grown by metalorganic vapor-phase epitaxy

    Science.gov (United States)

    Begarney, Michael John

    The surface structure and chemistry of compound semiconductors used in heterojunction bipolar transistors was investigated. Lattice-matched, single crystal films of gallium arsenide and indium phosphide were deposited by metalorganic vapor-phase epitaxy in a horizontal-flow, quartz reactor. Two areas of the transistor fabrication process were studied: (1) carbon doping of the gallium arsenide base layer using carbon tetrachloride, and (2) in-situ monitoring of the surface reconstructions of gallium arsenide and indium phosphide by reflectance difference spectroscopy for improved heterointerface formation. Carbon tetrachloride was found to effect the growth of gallium arsenide in two ways: (1) reaction of chlorine with adsorbed gallium atoms to produce volatile GaCl, and (2) reaction of chlorine with the GaAs film to produce GaCl3. The latter of these reactions was found to be insignificant below a temperature-dependent threshold ratio of chlorine to gallium. At lower values of this ratio, step bunching and pinning was observed, while at higher values, pits ranging from 20 to 50 nm in diameter resulted. We show that these results arise due to the presence of the c(4 x 4) gallium arsenide reconstruction during crystal growth, and the site-specific adsorption of CCl4 at gallium atom sites, which are present only at step edges for this reconstruction. The relationship between the reflectance difference spectra and the atomic structure of arsenic-rich reconstructions of GaAs (001) were investigated. It was found that a roughening process, involving the desorption of arsenic and outdiffusion of gallium atoms to the surface, takes place as the surface structure changes with decreasing arsenic coverage. We determined that the intensity of the negative peak at 2.8 eV strongly depends on the presence of adsorbed alkyl groups and gallium atoms, while, by contrast, the intensity of the positive peak at 2.9 eV is directly proportional to the density of (2 x 4)-type dimers. We

  9. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  10. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  11. Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

    1988-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  12. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  13. Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy

    Science.gov (United States)

    Walia, Jaspreet; Boulanger, Jonathan; Dhindsa, Navneet; LaPierre, Ray; (Shirley Tang, Xiaowu; Saini, Simarjeet S.

    2016-06-01

    Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm‑2 was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III–V nanowire devices.

  14. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦

    2002-01-01

    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  15. Discovery of a Weyl fermion state with Fermi arcs in niobium arsenide

    Science.gov (United States)

    Xu, Su-Yang; Alidoust, Nasser; Belopolski, Ilya; Yuan, Zhujun; Bian, Guang; Chang, Tay-Rong; Zheng, Hao; Strocov, Vladimir N.; Sanchez, Daniel S.; Chang, Guoqing; Zhang, Chenglong; Mou, Daixiang; Wu, Yun; Huang, Lunan; Lee, Chi-Cheng; Huang, Shin-Ming; Wang, Baokai; Bansil, Arun; Jeng, Horng-Tay; Neupert, Titus; Kaminski, Adam; Lin, Hsin; Jia, Shuang; Zahid Hasan, M.

    2015-09-01

    Three types of fermions play a fundamental role in our understanding of nature: Dirac, Majorana and Weyl. Whereas Dirac fermions have been known for decades, the latter two have not been observed as any fundamental particle in high-energy physics, and have emerged as a much-sought-out treasure in condensed matter physics. A Weyl semimetal is a novel crystal whose low-energy electronic excitations behave as Weyl fermions. It has received worldwide interest and is believed to open the next era of condensed matter physics after graphene and three-dimensional topological insulators. However, experimental research has been held back because Weyl semimetals are extremely rare in nature. Here, we present the experimental discovery of the Weyl semimetal state in an inversion-symmetry-breaking single-crystalline solid, niobium arsenide (NbAs). Utilizing the combination of soft X-ray and ultraviolet photoemission spectroscopy, we systematically study both the surface and bulk electronic structure of NbAs. We experimentally observe both the Weyl cones in the bulk and the Fermi arcs on the surface of this system. Our ARPES data, in agreement with our theoretical band structure calculations, identify the Weyl semimetal state in NbAs, which provides a real platform to test the potential of Weyltronics.

  16. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    Science.gov (United States)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  17. On the understanding of irradiation effects in germanium, silicon and gallium arsenide semi-conductors

    International Nuclear Information System (INIS)

    We have studied the behaviour of germanium, silicon and gallium arsenide semiconductors irradiated by different projectiles (heavy ions, protons, electrons and fullerenes). At low doses, thanks to deep level transient spectroscopy (DLTS) and Hall effect electrical measurements, we were able to explicit the nature of the defects present in germanium after irradiation at room temperature. For different projectiles, we have determined the defect creation kinetics. At higher doses, the electrical measurements have brought to the fore the presence of a specific defect created only after an heavy ion (or proton) irradiation. Moreover, positron annihilation spectroscopy (PAS) measurements show that size of this specific defect increases with the fluence. The damage has also been quantified by channeling Rutherford backscaterring (RBS-C) measurements. At first sight, the obtained defect creation rates are normalized by the nuclear collisions. This normalization is also present in the inverse of the gain evolution in silicon bipolar transistors. Meanwhile, an extensive study shows an efficiency decrease of the defect creation at intermediate values of the electronic energy loss Se, then, at the opposite, an increasing at higher values of Se. In the three semiconductors, we have observed track formation after fullerenes irradiation. These tracks are amorphous cylinders which have been characterized by transmission and high resolution electronic microscopy. They are due to the very high values of the electronic energy density which can be deposited by fullerenes owing to their low velocity. (author)

  18. Synthesis of boron nitride nanotubes by boron ink annealing.

    Science.gov (United States)

    Li, Lu Hua; Chen, Ying; Glushenkov, Alexey M

    2010-03-12

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs. PMID:20154372

  19. Synthesis of boron nitride nanotubes by boron ink annealing

    International Nuclear Information System (INIS)

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs.

  20. Synthesis of vinyl boronates from aldehydes by a practical boron-Wittig reaction.

    Science.gov (United States)

    Coombs, John R; Zhang, Liang; Morken, James P

    2015-04-01

    A highly stereoselective boron-Wittig reaction between stable and readily accessible 1,1-bis(pinacolboronates) and aldehydes furnishes a variety of synthetically useful di- and trisubstituted vinyl boronate esters. PMID:25799147

  1. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  2. Analysis of magnetron sputtered boron oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Buc, Dalibor [Slovak University of Technology in Bratislava (Slovakia); Bello, Igor [City University of Hong Kong, Kowloon, Hong Kong (China); Caplovicova, Maria [Comenius University in Bratislava (Slovakia); Mikula, Milan; Kovac, Jaroslav; Hotovy, Ivan [Slovak University of Technology in Bratislava (Slovakia); Chong, Yat Min [City University of Hong Kong, Kowloon, Hong Kong (China); Siu, Guei Gu [City University of Hong Kong, Kowloon, Hong Kong (China)], E-mail: apggsiu@cityu.edu.hk

    2007-10-15

    Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon-oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO{sub 2} phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B{sub 6}O, HBO{sub 2} crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.

  3. Microwave sintering of boron carbide composites

    International Nuclear Information System (INIS)

    Boron carbide is an important ceramic material because of its high hardness and low specific gravity. it is used for applications involving impact and wear resistance. The disadvantages of boron carbide materials are difficulty in fabrication and sensitivity to brittle fracture. These problems are significantly reduced by production of cermets based on boron carbide and aluminum or aluminum alloys. Microwave heating of boron carbide materials results in ultrarapid heating and high temperatures. Therefore, a finer microstructure is obtained. The objective of this work was to define a technology that would allow the manufacture of boron carbide ceramics having mechanical properties similar to those exhibited by hot-pressed specimens. microwave heating would be used for the densification step. Mixtures of boron carbide and aluminum were considered for this research because aluminum simultaneously acts as a sintering aid and introduces phases that contribute to toughness enhancement

  4. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  5. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  6. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  7. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  8. Sintering behavior of boron carbide

    International Nuclear Information System (INIS)

    Pressureless sintering behavior of boron carbide (B4C) in argon was studied, with change in time and temperature, using carbon as sintering aid. Carbon was added via fenolic resin, acting also as a binder. After isostatic pressing the specimens were sintered in a graphite furnace at 19600C/1h, 21600C/15 minutes and 1h and 22000C/1h. The achieved density was 97% of the theoretical. Some mechanical properties and microstructural aspects have been evaluated. (author)

  9. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  10. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm2, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  11. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  12. Boron deposition from fused salts. Final report

    International Nuclear Information System (INIS)

    A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements

  13. Magnetism of unconventional superconductors using the example of ruthenate and iron arsenide compounds

    International Nuclear Information System (INIS)

    The focus of this work lies on the magnetism in unconventional superconductors. The big question in this kind of superconductors is as magnetism influences the transition in the superconducting phase. During this thesis two different classes of compounds were investigated: iron-arsenides and ruthenates. The compounds of both have similarities to the famous cuprates. For the investigations of iron-arsenides the crystal structures of LiFeAs and Li0.95Fe0.05As were determined first. Afterwards the magnetic moments of both compounds as function of temperature and magnetic field and the spin density were measured. It was found out that the pure compound is a spin-singlet superconductor. The spin density is placed mainly at the iron atoms and can be described with the multipol-model. Additionally an impurity by iron atoms at interstitial places were found. For the non-stoichiometric compound the high magnetic moment below 156K could be confirmed. But the mail sin density is located at the position of the excess iron atom at interstitial positions. This positions changes with the magnetic field. This points to the fact that the high magnetic moment comes from the additional iron atoms which are formed in clusters. In addition, the crystal structure of REFeAsO (with RE=Ce, Pr and Nd) as a function of the temperature was examined. An orthorhombic transition was measured at 150 K. The precursors (which are also found in LaFeAsO) were seen. The strengthens of these precursors decreases with increasing size of the rare-earth atoms. For the ruthenates macroscopic investigations of the susceptibility and the electric resistivity of Ca3Ru0.9Ti0.1O7 were done. Moreover, the influence from the transition of the crystal structure was investigated. It turned out that the doping with titanium stabilizes the isolating phase which was already found in the pure connection. A jump by three scales was found in the electric resistivity and a change in the crystal structure (without changing

  14. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  15. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durmazucar, Hasan H.; Guenduez, Guengoer E-mail: ggunduz@metu.edu.tr

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  16. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    International Nuclear Information System (INIS)

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed

  17. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  18. Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide.

    Science.gov (United States)

    Chu, Zheng; Liu, Jinsong; Wang, Kejia

    2012-05-01

    A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100  kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60  kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed. PMID:22555695

  19. Retinal alterations produced by low level gallium arsenide laser exposure. Interim report, 1 May--31 December 1976

    Energy Technology Data Exchange (ETDEWEB)

    Beatrice, E.S.; Lund, D.J.; Talsma, D.M.

    1977-02-01

    The retinas of rhesus monkeys were subjected to irradiation by a prototype gallium arsenide (GaAs) laser training device. The laser device operated at 1600 Hz (pulse repetition frequency mode) or 132 Hz (pulse code mode) with nominal peak pulse power of 1 watt and 10 watts. Exposure durations ranged from 1.0 sec to 90 sec. The tissue reaction at the exposure site was characterized by the development of a pale gray clouding within 10 sec of initiation of the exposure. The nature of the retinal change could not be determined by ophthalmoscopic, histologic, or flourescein leakage techniques.

  20. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  1. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Boron carbide (B4C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B4C by carbothermic reduction of B2O3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B4C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author)

  2. The selective trapping of arsenic interstitial atoms by impurities in gallium arsenide

    International Nuclear Information System (INIS)

    Carbon doped GaAs is irradiated either with (a) fast neutrons (1 MeV) or (b) electrons (2 MeV). Complexes previously labelled C(1) are produced and the fine structure of the two LVM (infrared active localized vibrational mode) lines is discussed. A comparison is made with the BGa-Asi (boron impurity-interstitial arsenic) complex and it is concluded that the C(1) centre is a CAs-Asi (carbon acceptor-interstitial arsenic) defect. The defect dissociates at about 150 0C. (author)

  3. Possible toxicity of boron on sugar cane

    Energy Technology Data Exchange (ETDEWEB)

    Bravo C., M.

    Analyses of necrotic and green leaf tissues from sugar cane grown in the Tambo Valley (Arequipa, Peru) have shown that the boron concentration in necrotic tissue (average 657.7 ppm) is several times higher than that in the green tissue (average 55.7 ppm). This suggests that the necrosis may be due to boron toxicity.

  4. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  5. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  6. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  7. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  8. Boron Carbides As Thermo-electric Materials

    Science.gov (United States)

    Wood, Charles

    1988-01-01

    Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

  9. Nuclear fuel management and boron carbide coating

    International Nuclear Information System (INIS)

    In recent years one way of introducing burnable absorber is to coat the fuel pellets by a thin layer of burnable absorber so called integral fuel burnable absorber (IFBA). In this method the fuel is coated with boron nitride or boron carbide. Boron has low absorption cross-section and when it exists on the surface of the fuel, it interacts with thermalized neutron. B4C is a boron compound, which can be used for coating the nuclear fuel. It has high thermal stability and withstands high pressure and temperatures. High technology product of boron carbide has different ratio of B: C. But in nuclear reactor when boron carbide is used, it must be rich with boron. In this research chemical vapor decomposition (CVD) has been using boron trichloride and carbon tetra chloride for reactant materials. The experiments were carried out at high temperatures (1050 degree Celsius, 1225 degree Celsius and 1325 degree Celsius). The coated samples were analyzed using X-Ray diffractometer (XRD), scanning electron microscopy (SEM) and will be presented in this paper. It was seen that decreasing the reaction temperature caused an increase on the quality and thickness of the coating

  10. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  11. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    10B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH)4-) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10B and 11B

  12. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping. PMID:25427850

  13. Stabilization of boron carbide via silicon doping

    Science.gov (United States)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  14. Burnup performances of boron nitride and boron coated nuclear fuels

    International Nuclear Information System (INIS)

    The nuclear fuels of urania (UOV) and 5% and 10% gadolinia (Gd2O3) containing UO2 previously produced by sol-gel technique were coated with first boron nitride (BN) then boron (B) thin layer by chemical vapor deposition (CVD) and also by plasma enhanced chemical vapor deposition (PECVD) techniques to increase the fuel cycle length and to improve the physical properties. From the cross-sectional view of BN and B layers taken from scanning electron microscope (SEM), the excellent adherence of BN onto fuel and B onto BN layer was observed in both cases. The behavior of fuel burnup, depletion of BN and B, the effect of coating thickness and also Gd2O3 content on the burnup performances of the fuels were identified by using the code WIMS-D/4 for Pressurized Water Reactor (PWR) and Boiling Water Reactor (BWR) cores. The optimum thickness ratio of B to BN was found as 4 and their thicknesses were chosen as 40 mm and 10 mm respectively in both reactor types to get extended cycle length. The assemblies consisting of fuels with 5% Gd2O3 and also coated with 10 mm BN and 40 mm B layers were determined as candidates for getting higher burnup in both types of reactors

  15. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  16. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  17. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  18. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs2 (A = K, Rb)

    International Nuclear Information System (INIS)

    Highlights: • Zintl tetragonal phase ACdGeAs2 (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs2 (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices

  19. Plasma enhanced deposition of 'silicon nitride' for use as an encapsulant for silicon ion-implanted gallium arsenide

    International Nuclear Information System (INIS)

    Silicon nitride films have been produced by plasma enhanced chemical vapour deposition using silane and ammonia as the reactant gases in a Plasma-Therm PK1250PD machine. The compositions of the films have been investigated as a function of the silane to ammonia flow rate ratio used for deposition, using infra-red transmission and Auger electron spectroscopies. These techniques indicated that the plasma deposited films were silicon-rich and contained hydrogen. The oxygen content of the films was below the detection limit of Auger electron spectroscopy implying that it was less than 1%. Silicon ion-implanted semi-insulating gallium arsenide has been annealed using an approximately 1000 A thick film of plasma deposited silicon nitride as an encapsulant. This capped annealing technique has achieved 70% activations of 4 x 1012 cm-2, 200 keV silicon implants with sheet Hall mobilities of 4000 cm2 V-1 s-1 at room temperature. Free carrier concentration and Hall mobility profiles are presented. Unimplanted semi-insulating gallium arsenide samples have also been capped annealed in the same manner and maintained a sheet resistivity of greater than 107 Ω/square after annealing. (author)

  20. Experimental boron neutron capture therapy for melanoma: Systemic delivery of boron to melanotic and amelanotic melanoma

    International Nuclear Information System (INIS)

    The boron-containing melanin precursor analogue p-boronophenylalanine (BPA) has previously been shown to selectively deliver boron to pigmented murine melanomas when administered in a single intragastric dose. If boron neutron capture therapy is to become a clinically useful method of radiation therapy for human malignant melanoma, the boron carrier must be capable of delivering useful amounts of boron to remote tumor sites (metastases) and to poorly pigmented melanomas. The authors have now determined the ability of BPA to accumulate in several nonpigmented melanoma models including human melanoma xenografts in nude mice. The absolute amount of boron in the nonpigmented melanomas was about 50% of the observed in the pigmented counterparts but was still selectively concentrated in the tumor relative to normal tissues in amounts sufficient for effective neutron capture therapy. Single intragastric doses of BPA resulted in selective localization of boron in the amelanotic Greene melanoma carried in the anterior chamber of the rabbit eye and in a pigmented murine melanoma growing in the lungs. The ratio of the boron concentration in these tumors to the boron concentration in the immediately adjacent normal tissue was in the range of 3:1 to 4:1. These distribution studies support the proposal that boron neutron capture therapy may be useful as a regional therapy for malignant melanoma

  1. Analysis of Time Dependent Low Level Exposure to Gallium Arsenide on Blood ALAD activity, Glutathione and Lipid per oxidation levels in Rat Blood, Liver and Kidney

    Directory of Open Access Journals (Sweden)

    Braham Deo Gupta

    2015-06-01

    Full Text Available Gallium arsenide (GaAs, an intermetallic semiconductor has widespread applications in the electronic industry. GaAs has the ability to dissociate into its constitutive moieties, arsenic and gallium which might be responsible for the oxidative stress. The present study was aimed at evaluating, effect of gallium arsenide on blood ALAD activity, glutathione and lipid per oxidation levels in rat blood, liver and kidney on exposure of 1, 2 and 6 months. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased TBARS levels, decreased glutathione levels in blood and tissues. We also noted the decreased activity of ALAD in rat blood on exposure to gallium arsenide. The study demonstrates that the time dependent exposure to low level gallium arsenide led to increased in lipid per oxidation, decrease glutathione level and ALAD activity which concludes that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress in rats and exerts its toxicity in time dependent manner related to its dissolution and maximum toxicity by increasing the time period of exposure.

  2. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  3. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  4. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  5. Proceedings of workshop on 'Boron Chemistry and Boron Neutron Capture Therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 3rd Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 12, in 1991. In this workshop, our attention was focused on the chemical nature of boron compounds and the boron neutron capture therapy (BNCT). First, clinical experiences of BNCT in KURRI in 1990 and 1991 were reported (Chap. 3). The feasibility of the gadolinium neutron capture therapy for brain tumors was discussed (Chap. 4). In the chemical field, a rapid spectrophotometric determination of trace amounts of borons in biological samples is described (Chap. 5). The chemical behaviours of p-boronophenylalanine and its analogs in aqueous solutions were investigated by a paper electrophoresis and infrared spectroscopy (Chap. 6). On the molecular design and synthesis of new boron carriers for BNCT, several new synthetic methods for B-10 containing nucleoside derivatives were shown (Chap. 7). (author)

  6. Quantitative boron detection by neutron transmission method

    International Nuclear Information System (INIS)

    //Quantitative boron detection is mainly performed by chemical methods like colorimetric titration. High neutron absorption cross section of natural boron makes attractive its detection by absorption measurements. This work is an extension of earlier investigations where neutron radiography technique was used for boron detection. In the present investigation, the neutron absorption rate of boron containing solutions is the way to measure quantitatively the boron content of the solutions. The investigation was carried out in Istanbul TRIGA Mark-II reactor. In the end of the experiments, it was observed that even |ppw| grade boron in aqueous solution can be easily detected. The use of this method is certainly very useful for boron utilizing industries like glass and steel industries.The major disadvantage of the method is the obligation to use always aqueous solutions to be able to detect homogeneously the boron content. Then, steel or glass samples have to be put first in an appropriate solution form. The irradiation of steel samples can give the distribution of boron by the help of a imaging and this suggested method will give its quantitative measurement. The superiority of this method are its quick response time and its accuracy. To test this accuracy, a supposed unknown , solution of boric acid is irradiated and then calculated by the help of the calibration curve. The measured value of boric acid was 0.89 mg and the calculated value was found to be 0.98 mg which gives an accuracy of 10 %. It was also seen that the method is more accurate for low concentration. (authors)

  7. X-ray diffraction study of boron produced by pyrolysis of boron tribromide

    Science.gov (United States)

    Rosenberg, David

    The goal of this research was to determine the composition of boron deposits produced by pyrolysis of boron tribromide, and to use the results to (a) determine the experimental conditions (reaction temperature, etc.) necessary to produce alpha-rhombohedral boron and (b) guide the development/refinement of the pyrolysis experiments such that large, high purity crystals of alpha-rhombohedral boron can be produced with consistency. Developing a method for producing large, high purity alpha-rhombohedral boron crystals is of interest because such crystals could potentially be used to achieve an alpha-rhombohedral boron based neutron detector design (a solid-state detector) that could serve as an alternative to existing neutron detector technologies. The supply of neutron detectors in the United States has been hampered for a number of years due to the current shortage of helium-3 (a gas used in many existing neutron detector technologies); the development of alternative neutron detector technology such as an alpha-rhombohedral boron based detector would help provide a more sustainable supply of neutron detectors in this country. In addition, the prospect/concept of an alpha-rhombohedral boron based neutron detector is attractive because it offers the possibility of achieving a design that is smaller, longer life, less power consuming, and potentially more sensitive than existing neutron detectors. The main difficulty associated with creating an alpha-rhombohedral boron based neutron detector is that producing large, high purity crystals of alpha-rhombohedral boron is extremely challenging. Past researchers have successfully made alpha-rhombohedral boron via a number of methods, but no one has developed a method for consistently producing large, high purity crystals. Alpha-rhombohedral boron is difficult to make because it is only stable at temperatures below around 1100-1200 °C, its formation is very sensitive to impurities, and the conditions necessary for its

  8. Sintering of boron carbide (B4C)

    International Nuclear Information System (INIS)

    Boron carbide (B4C) is used as a control element in different types of reactors due to the high fast and thermal neutron absorption cross-section of B-10. Requirements of the Advanced Reactor Division of the Bariloche Atomic Center triggered the study of the possibilities of fabricating B4C pellets by cold-pressing and sintering. The results of essays of sinterability of two different commercial boron carbide powders, sintered at temperatures between 1200 and 2200 deg C, are given. Characterizations of the samples were made to determine the evolution of density, porosity, microstructure and boron content as a function of sintering temperature. (Author)

  9. Developments in boron magnetic resonance imaging (MRI)

    Energy Technology Data Exchange (ETDEWEB)

    Schweizer, M.

    1995-11-01

    This report summarizes progress during the past year on maturing Boron-11 magnetic resonance imaging (MRI) methodology for noninvasive determination of BNCT agents (BSH) spatially in time. Three major areas are excerpted: (1) Boron-11 MRI of BSH distributions in a canine intracranial tumor model and the first human glioblastoma patient, (2) whole body Boron-11 MRI of BSH pharmacokinetics in a rat flank tumor model, and (3) penetration of gadolinium salts through the BBB as a function of tumor growth in the canine brain.

  10. First boronization in KSTAR: Experiences on carborane

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Suk-Ho, E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Kun-Su; Kim, Kwang-Pyo; Kim, Kyung-Min; Kim, Hong-Tack [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, Jong-Ho; Woo, Hyun-Jong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Park, Jae-Min [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Park, Eun-Kyong [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Woong-Chae; Kim, Hak-Kun; Park, Kap-Rai; Yang, Hyung-Lyeol; Oh, Yeong-Kook; Na, Hoon-Kyun [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Lho, Taehyeop [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, Kyu-Sun [Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    First boronization was performed in KSTAR tokamak during 2009 campaign in order to reduce oxygen impurities and to lower the power loss due to radiation. We report the results from the experiences on carborane during the first boronization in KSTAR. After the boronization, H{sub 2}O and O{sub 2} level in the vacuum vessel are reduced significantly. The characteristics of the deposited thin films were analyzed by variable angle spectroscopic ellipsometry, XPS, and AES. {approx}1.78 x 10{sup 16} cm{sup -2} s{sup -1} of carbon flux on the wall is estimated by using cavity technique.

  11. Boron site preference in ternary Ta and Nb boron silicides

    International Nuclear Information System (INIS)

    X-ray single crystal (XSC) and neutron powder diffraction data (NPD) were used to elucidate boron site preference for five ternary phases. Ta3Si1−xBx (x=0.112(4)) crystallizes with the Ti3P-type (space group P42/n) with B-atoms sharing the 8g site with Si atoms. Ta5Si3−x (x=0.03(1); Cr5B3- type) crystallizes with space group I4/mcm, exhibiting a small amount of vacancies on the 4a site. Both, Ta5(Si1−xBx)3, x=0.568(3), and Nb5(Si1−xBx)3, x=0.59(2), are part of solid solutions of M5Si3 with Cr5B3-type into the ternary M–Si–B systems (M=Nb or Ta) with B replacing Si on the 8h site. The D88-phase in the Nb–Si–B system crystallizes with the Ti5Ga4-type revealing the formula Nb5Si3B1−x (x=0.292(3)) with B partially filling the voids in the 2b site of the Mn5Si3 parent type. - Graphical abstract: The crystal structures of a series of compounds have been solved from X-ray single crystal diffractometry revealing details on the boron incorporation. Highlights: ► Structure of a series of compounds have been solved by X-ray single crystal diffractometry. ► Ta3(Si1−xBx) (x=0.112) crystallizes with the Ti3P-type, B and Si atoms randomly share the 8g site. ► Structure of Nb5Si3B1−x (x=0.292; Ti5Ga4-type) was solved from NPD.

  12. Synthesis of Boron Nanorods by Smelting Non-Toxic Boron Oxide in Liquid Lithium

    OpenAIRE

    Amartya Chakrabarti; Tao Xu; Laura K. Paulson; Krise, Kate J.; Maguire, John A; Hosmane, Narayan S.

    2010-01-01

    In contrast to the conventional bottom-up syntheses of boron nanostructures, a unique top-down and greener synthetic strategy is presented for boron nanorods involving nontoxic boron oxide powders ultrasonically smelted in liquid lithium under milder conditions. The product was thoroughly characterized by energy dispersive X-ray analysis, atomic emission spectroscopy, thermogravimetric analysis and, UV-Vis spectroscopy, including structural characterization by transmission electron microscop...

  13. Determination of boron isotope ratios in boron carbide by mass spectrometry

    International Nuclear Information System (INIS)

    This paper introduces the direct determination of boron isotope ratios in the boron carbide powder by thermal ionization mass spectrometry. The technique for sample loading, the procedure for heating and the eliminating of effects induced by oxygen are studied. The study indicates that the preparing process for the sample will be shorted, and the time for determination and the exposure dose of the laboratory assistant will be reduced for the reason of directly determination of boron carbide. (authors)

  14. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes

  15. Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

    International Nuclear Information System (INIS)

    Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

  16. Boron

    International Nuclear Information System (INIS)

    This paper reports that borate minerals and refined borates are used extensively for the manufacture of vitreous materials such as insulation and textile fiberglasses, borosilicate glass, and porcelain enamels and frits. In North America, these applications are estimated to account for over 54% of the borate consumption. Other substantial uses are in soaps and detergents, metallurgy, fire retardants, industrial biocides, agriculture, and various miscellaneous applications. Reported domestic borate consumption in 1990 was estimated by the U.S. Bureau of Mines to be 320 000 metric tons B2O3 versus 354 000 metric tons B2O3 in 1989. Consumption is projected to remain essentially static in 1991. Imports were estimated by the Bureau to be 50 000 metric tons B2O3 in 1990. Exports of boric acid and refined borates were approximately 650 000 metric tons of product, a 15 000 metric ton increase from the 1989 level. This increase partially offsets the drop in the 1990 consumption level

  17. Boron-isotope fractionation in plants

    International Nuclear Information System (INIS)

    Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, 11B and 10B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in 11B relative to the nutrient solution, and the leaves were enriched in 10B and the stem in 11B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

  18. Synthesis of Boron-Containing Primary Amines

    Directory of Open Access Journals (Sweden)

    Sheng-Hsuan Chung

    2013-10-01

    Full Text Available In this study, boron-containing primary amines were synthesized for use as building blocks in the study of peptoids. In the first step, Gabriel synthesis conditions were modified to enable the construction of seven different aminomethylphenyl boronate esters in good to excellent yields. These compounds were further utilized to build peptoid analogs via an Ugi four-component reaction (Ugi-4CR under microwave irradiation. The prepared Ugi-4CR boronate esters were then successfully converted to the corresponding boronic acids. Finally, the peptoid structures were successfully modified by cross-coupling to aryl/heteroaryl chlorides via a palladium-mediated Suzuki coupling reaction to yield the corresponding derivatives in moderate to good yields.

  19. Boron toxicity in oil palm (Elaeis guineensis)

    Energy Technology Data Exchange (ETDEWEB)

    Rajaratnam, J.A.

    1973-01-01

    Potted oil palms were treated with fertilizer of borate-46 at several concentrations and the plants were observed for boron toxicity effects. Toxicity symptoms were apparent at high rates but not at rates equivalent to typical Malaysian soils.

  20. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  1. Boron-Filled Hybrid Carbon Nanotubes.

    Science.gov (United States)

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  2. Boron neutron capture therapy. What is next?

    International Nuclear Information System (INIS)

    BNCT (Boron Neutron Capture Therapy) will have difficulties establishing itself without efficient and conclusive clinical trials of glioma, without the expansion to other tumors, and without efficient programs for compound development and testing. (author)

  3. Ni doping of semiconducting boron carbide

    International Nuclear Information System (INIS)

    The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

  4. Analysis of boron at Koeberg Power Station

    International Nuclear Information System (INIS)

    Soluble reactivity poisons, also called chemical shim, produce spatially uniform neutron absorption when dissolved in reactor coolant water. The boron-10 isotope having a high neutron absorption coefficient is used in commercial pressurised water reactors (PWR) to limit and control reactivity. This is achieved at Koeberg Nuclear Power Station (KNPS) and the majority of commercial PWR's worldwide by the addition of natural boric acid to the reactor coolant. The boric acid dissolved in the coolant decreases the thermal utilisation factor, causing a decrease in reactivity. By varying the concentration of boric acid (and hence also the B-10 concentration) in the coolant, a process referred to as boration and dilution, the reactivity of the core can be easily managed. An increase in boron concentration (boration) creates negative reactivity and if the boron concentration is reduced (dilution), positive reactivity is added. The changing of boron concentration in a PWR is used primarily to compensate for fuel burn-up or poison build-up. The variation in boron concentration allows control rod use to be minimised, which results in a flatter flux profile over the core than can be produced by control rod manipulation. Accurate laboratory and on-line chemical analysis of boron concentration is important because of its operational implications associated with reactivity control and also for nuclear safety. In a normal fuel cycle, as the nuclear fuel is being consumed, the reactor coolant boric acid (B-10) concentration must be reduced by dilution with purified water to maintain the reactor at constant power. Besides in the reactor coolant water, boric acid concentration is also important in the chemical and volume control system and reactor make-up system for operation. For nuclear safety, boric acid concentrations are technical specification parameters, maintained and monitored in the spent fuel system and safety injection systems. Boron concentration determination is

  5. High temperature thermoelectric properties of boron carbide

    International Nuclear Information System (INIS)

    Boron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (∼1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200 degrees C) and for preparing n-type materials is discussed

  6. Lithium-Beryllium-Boron : Origin and Evolution

    OpenAIRE

    Vangioni-Flam, Elisabeth; Casse, Michel; Audouze, Jean

    1999-01-01

    The origin and evolution of Lithium-Beryllium-Boron is a crossing point between different astrophysical fields : optical and gamma spectroscopy, non thermal nucleosynthesis, Big Bang and stellar nucleosynthesis and finally galactic evolution. We describe the production and the evolution of Lithium-Beryllium-Boron from Big Bang up to now through the interaction of the Standard Galactic Cosmic Rays with the interstellar medium, supernova neutrino spallation and a low energy component related to...

  7. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  8. A neutron diffraction study of amorphous boron

    Science.gov (United States)

    Delaplane, R. G.; Lundström, T.; Dahlborg, U.; Howells, W. S.

    1991-07-01

    The structure of amorphous boron has been studied with pulsed neutron diffraction techniques using the ISIS facilities at the Rutherford Appleton Laboratory. The experimental static structure factor S(Q) and radial distribution function support a structural model based on units of B12 icosahedra resembling those found in crystalline β-rhombohedral boron, but with a certain degree of disorder occurring in the linking between these subunits.

  9. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 104 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 108 shots for electro-optic drivers. Much effort is currently being channeled in the study

  10. Pixel x-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experiment determination)

    International Nuclear Information System (INIS)

    Gallium Arsenide pixel detectors with an area of 170 x 320 microm2 and thickness of 5 microm, realized by molecular beam epitaxy, have been designed and tested with X- and γ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the Kα and Kβ lines of the 55Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F = 0.12 ± 0.01

  11. Laser modulation of human immune system: inhibition of lymphocyte proliferation by a gallium-arsenide laser at low energy

    International Nuclear Information System (INIS)

    Cultured human lymphocytes were subjected to irradiation with a gallium-arsenide laser at energy fluence varying from 2.17 to 651 mJ/cm2, and the cell proliferation was assessed by [3H]thymidine incorporation. Both mitogenic proliferation in response to phytohemagglutinin and spontaneous cell proliferation were markedly inhibited by the laser irradiation at energy fluence as low as 10.85 mJ/cm2. Similarly, the functional response of cells to antigen stimulation in a one-way mixed-lymphocyte reaction was also diminished as a result of laser irradiation. The results indicate that laser irradiation at low energy can interfere with immune system in vitro, and similar modulation could potentially occur in human subjects exposed to laser irradiation in vivo

  12. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 105 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  13. Amorphous boron nitride at high pressure

    Science.gov (United States)

    Durandurdu, Murat

    2016-06-01

    The pressure-induced phase transformation in hexagonal boron nitrite and amorphous boron nitrite is studied using ab initio molecular dynamics simulations. The hexagonal-to-wurtzite phase transformation is successfully reproduced in the simulation with a transformation mechanism similar to one suggested in experiment. Amorphous boron nitrite, on the other hand, gradually transforms to a high-density amorphous phase with the application of pressure. This phase transformation is irreversible because a densified amorphous state having both sp3 and sp2 bonds is recovered upon pressure release. The high-density amorphous state mainly consists of sp3 bonds and its local structure is quite similar to recently proposed intermediate boron nitrite phases, in particular tetragonal structure (P42/mnm), rather than the known the wurtzite or cubic boron nitrite due to the existence of four membered rings and edge sharing connectivity. On the basis of this finding we propose that amorphous boron nitrite might be best candidate as a starting structure to synthesize the intermediate phase(s) at high pressure and temperature (probably below 800 °C) conditions.

  14. Inheritance of Boron Efficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    SHI Lei; WANG Yun-Hua; NIAN Fu-Zhao; LU Jian-Wei; MENG Jin-Ling; XU Fang-Sen

    2009-01-01

    Field experiments were conducted to study the inheritance of boron efficiency in oilseed rape (Brassica napus L.) by evaluating the boron (B) efficiency coefficient (BEC,the ratio of the seed yield at below the critical boron level to that at the boron-sufficient level) with 657 F2:3 fines of a population derived from a cross between a B-efficient cultivar,Qingyou 10,and a B-inefficient cultivar,Bakow.Qingyou i0 had high BEC as well as high seed yield at low available soil B.On the contrary,Bakow produced low seed yield at low B status.Boron deficiency decreased the seed yield of the F2:3 lines to different extents and the distribution of BEC of the population showed a bimodal pattern.When the 657 F2:3 lines were grouped into B-efficient lines and B-inefficient lines according to their BEC,the ratio of B-efficient lines to B-inefficient lines fitted the expected ratio (3:1),indicating that one major gene controlled the B-efficiency trait.127 F2:3 lines selected from the population at random,with distribution of BEC similar to that of the overall population,were used to identify the target region for fine mapping of the boron efficiency gene.

  15. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  16. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  17. Boronization of Russian tokamaks from carborane precursors

    International Nuclear Information System (INIS)

    A new and cheap boronization technique using the nontoxic and nonexplosive solid substance carborane has been developed and successfully applied to the Russian tokamaks T-11M, T-3M, T-10 and TUMAN-3. The glow discharge in a mixture of He and carborane vapor produced the amorphous B/C coating with the B/C ratio varied from 2.0-3.7. The deposition rate was about 150 nm/h. The primary effect of boronization was a significant reduction of the impurity influx and the plasma impurity contamination, a sharp decrease of the plasma radiated power, and a decrease of the effective charge. Boronization strongly suppressed the impurity influx caused by additional plasma heating. ECR- and ICR-heating as well as ECR current drive were more effective in boronized vessels. Boronization resulted in a significant extension of the Ne- and q-region of stable tokamak operation. The density limit rose strongly. In Ohmic H-mode energy confinement time increased significantly (by a factor of 2) after boronization. It rose linearly with plasma current Ip and was 10 times higher than Neo-Alcator time at maximum current. ((orig.))

  18. Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

    International Nuclear Information System (INIS)

    An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2

  19. Synthesis and properties of low-carbon boron carbides

    International Nuclear Information System (INIS)

    This paper reports on the production of boron carbides of low carbon content (3 and CCl4 at 1273-1673 K in a chemical vapor deposition (CVD) reactor. Transmission electron microscopy (TEM) revealed that phase separation had occurred, and tetragonal boron carbide was formed along with β-boron or α-boron carbide under carbon-depleted gas-phase conditions. At temperatures greater than 1390 degrees C, graphite substrates served as a carbon source, affecting the phases present. A microstructure typical of CVD-produced α-boron carbide was observed. Plan view TEM of tetragonal boron carbide revealed a blocklike structure

  20. Development of magnetic resonance technology for noninvasive boron quantification

    International Nuclear Information System (INIS)

    Boron magnetic resonance imaging (MRI) and spectroscopy (MRS) were developed in support of the noninvasive boron quantification task of the Idaho National Engineering Laboratory (INEL) Power Burst Facility/Boron Neutron Capture Therapy (PBF/BNCT) program. The hardware and software described in this report are modifications specific to a GE Signa trademark MRI system, release 3.X and are necessary for boron magnetic resonance operation. The technology developed in this task has been applied to obtaining animal pharmacokinetic data of boron compounds (drug time response) and the in-vivo localization of boron in animal tissue noninvasively. 9 refs., 21 figs

  1. A novel method of boron delivery using sodium iodide symporter for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron Neutron Capture Therapy (BNCT) effectiveness depends on the preferential sequestration of boron in cancer cells relative to normal tissue cells. We present a novel strategy for sequestering boron using an adenovirus expressing the sodium iodide symporter (NIS). Human glioma grown subcutaneously in athymic mice and orthotopic rat brain tumors were transfected with NIS using a direct tumor injection of adenovirus. Boron bound as sodium tetrafluoroborate (NaBF4) was administered systemically several days after transfection. Tumors were excised hours later and assessed for boron concentration using inductively coupled plasma atomic emission spectroscopy. In the human glioma transfected with NIS, boron concentration was more than 10 fold higher with 100 mg/kg of NaBF4, compared to tumor not transfected. In the orthotopic tumor model, the presence of NIS conferred almost 4 times the boron concentration in rat tumors transfected with human virus compared with contralateral normal brain not transfected. We conclude that adenovirus expressing NIS has the potential to be used as a novel boron delivery agent and should be explored for future clinical applications. (author)

  2. Spectromicroscopy of boron for the optimization of boron neutron capture therapy (BNCT) for cancer

    International Nuclear Information System (INIS)

    We used synchrotron spectromicroscopy to study the microscopic distribution of boron in rat brain tumour and healthy tissue in the field of boron neutron capture therapy (BNCT). The success of this experimental cancer therapy depends on the preferential uptake of 10B in tumour cells after injection of a boron compound (in our case B12H11SH, or BSH). With the Mephisto (microscope a emission de photoelectrons par illumination synchrotronique de type onduleur) spectromicroscope, high-magnification imaging and chemical analysis was performed on brain tissue sections from a rat carrying an implanted brain tumour and the results were compared with inductively coupled plasma-atomic emission spectroscopy (ICP-AES) detection of boron in bulk tissue. Boron was found to have been taken up more favourably by regions of tumour rather than healthy tissue, but the resulting boron distribution in the tumour was inhomogeneous. The results demonstrate that Mephisto can perform microchemical analysis of tissue sections, detect and localize the presence of boron with submicron spatial resolution. The application of this technique to boron in brain tissue can therefore be used to evaluate the current efforts to optimize BNC therapy. (author)

  3. Proceedings of workshop on 'boron science and boron neutron capture therapy'

    Energy Technology Data Exchange (ETDEWEB)

    Kitaoka, Y. [ed.

    1998-12-01

    This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

  4. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-10-22

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

  5. A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

    International Nuclear Information System (INIS)

    This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively

  6. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  7. Boron-11 NMR spectroscopy of excised mouse tissues after infusion of boron compound used in neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy (BNCT) is based on selective boron uptake by the tumor and in situ activation by neutron beam. The authors propose the use of B-11 MR spectroscopy to noninvasively study boron uptake in animal tumor models. Sodium mercaptoundeca-hydrododecaborate was infused into female BALB/cJ mice and liver, brain, spleen, kidney, and tumor tissues were excised for MR (27.4MHz) and total boron content measurements. Boron-11 was easily detectable in tumor, liver, spleen, and skin. The results gave a very good correlation (correlation coefficient of .997) between B-11 MR measurements and total boron content of excised mouse tissues

  8. Simultaneous determination of boron-10 and boron-11 under proton bombardment

    International Nuclear Information System (INIS)

    The isotopic analysis of boron gained importance with increased use of boron-10 in nuclear technology. Former techniques for determining the stable boron isotope either were limited to the determination of a single isotope or required tedious experimental prodecure. The use of proton induced reactions was therefore investigated as an alternative method for the simultaneous analysis of both stable isotopes of boron through a relatively simple experimental procedure. Aqueous solutions of natural boric acid (19,78 at. % 10B) and enriched boric acid (92,41 at. % 10B) were mixed and evaporated to dryness in order to obtain samples in which the isotopic concentration of boron was known. Thin targets were produced by evaporating boron oxide, converted by heat from the boric acid mixture, onto tantalum backing material. Standard samples with known contents of boron oxide were prepared by dry mixing standard reference boron-containing glass powers in a ball mill. Thick targets containing boron of different isotopic compositions were prepared in matrices of potassium bromide and of ion-exchange resins by mixing the matrix with aqueous solutions of boric acid and of sodium carbonate by fusion with boric oxide. The most intense prompt gamma-rays emitted from boron isotopes under irradiation with protons up to 4,5 MeV were the 428-KeV 10B α(1,0), 718-KeV 10B p(1,0) and the 2124-KeV 11B p(1,0) gamma-rays. Excitation functions for the production of each of these were measured using both thick and thin targets

  9. Boron: out of the sky and onto the ground

    International Nuclear Information System (INIS)

    Now an accepted, engineered material for aerospace applications, boron is taking its place on the ground. Both current production applications, prototype (development) applications, and speculative applications abound. In the leisure product market, boron epoxy or boron aluminum has been used or tried in golf clubs (in combination with graphite epoxy or to reinforce aluminum or steel), in tennis racquets, in bicycles, racing shells, skis and skipoles, bows and arrows, and others. In the industrial area, boron has been used to reduce fatigue, increase stiffness, or for its abrasive properties. Textile machinery, honing tools, and cut off wheels or saws are among the applications. In the medical field, prosthetics and orthotic braces, wheel chairs, canes, and crutches are all good applications for boron. Applications for boron in transportation, construction, and heavy industry are also possible. The volume of boron used in these applications could have a major impact on prices, making boron composite parts cost competitive with conventional materials. (U.S.)

  10. 15th International Conference on Boron Chemistry (IMEBORON XV)

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil

    2015-01-01

    Roč. 87, č. 2 (2015), s. 121. ISSN 0033-4545 Institutional support: RVO:61388980 Keywords : boranes * boron * boron materials * carboranes * IMEBORON XV * medicinal chemistry Subject RIV: CA - Inorganic Chemistry

  11. Boron Removal in Seawater Reverse Osmosis System

    KAUST Repository

    Rahmawati, Karina

    2011-07-01

    Reverse osmosis successfully proves to remove more than 99% of solute in seawater, providing fresh water supply with satisfied quality. Due to some operational constraints, however, some trace contaminants removal, such as boron, cannot be achieved in one pass system. The stringent criterion for boron from World Health Organization (WHO) and Saudi Arabia local standard (0.5 mg/l) is hardly fulfilled by single pass sea water reverse osmosis (SWRO) plants. Some design processes have been proposed to deal with boron removal, but they are not economically efficient due to high energy and chemical consumption. The objective of this study was to study boron removal by different reverse osmosis membranes in two pH conditions, with and without antiscalant addition. Thus, it was expected to observe the possibility of operating single pass system and necessity to operate two pass system using low energy membrane. Five membrane samples were obtained from two different manufacturers. Three types of feed water pH were used, pH 8, pH 10, and pH 10 with antiscalant addition. Experiment was conducted in parallel to compare membrane performance from two manufacturers. Filtration was run with fully recycle mode for three days. Sample of permeate and feed were taken every 12 hours, and analyzed for their boron and TDS concentration. Membrane samples were also tested for their surface charge. The results showed that boron rejection increases as the feed pH increases. This was caused by dissociation of boric acid to negatively charged borate ion and more negatively charged membrane surface at elevated pH which enhance boron rejection. This study found that single pass reverse osmosis system, with and without elevating the pH, may not be possible to be applied because of two reasons. First, permeate quality in term of boron, does not fulfill WHO and local Saudi Arabia regulations. Second, severe scaling occurs due to operation in alkaline condition, since Ca and Mg concentration are

  12. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  13. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Seibt, M. [Universität Göttingen, IV Physikalisches Institut (Germany); Kazakov, I. P.; Tsikunov, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  14. Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

    CERN Document Server

    Hartnett, J G; Floch, J -M Le; Krupka, J; Tobar, M E; Cros, D

    2009-01-01

    Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.

  15. First gaseous boronization during pulsed discharge cleaning

    Energy Technology Data Exchange (ETDEWEB)

    Ko, J., E-mail: jinseok@nfri.re.kr [Department of Physics, University of Wisconsin, Madison, WI (United States); Den Hartog, D.J.; Goetz, J.A.; Weix, P.J.; Limbach, S.T. [Department of Physics, University of Wisconsin, Madison, WI (United States)

    2013-01-15

    The first successful gaseous boronization during a pulsed discharge is reported. Sublimation of o-carborane (C{sub 2}B{sub 10}H{sub 12}) combined with pulsed discharge plasmas with a repetition rate of 1 Hz is used to produce a hard boron-containing coating for reversed field pinch (RFP) plasmas in the Madison Symmetric Torus. X-ray photoelectron spectroscopy with Ar ion beam etching for silicon coupons installed at the plasma boundary shows about 60% boron concentration in the deposited layer. Both profilometer and scanning electron microscope analyses of the silicon coupons imply a strong toroidally non-uniform deposition depending on the location of the o-carborane injection. The layer thickness ranges from 50 to 300 nm. Ellipsometry calibrated with the profilometer results yields a refractive index of 2.2-2.3 for the films. The high refractive index implies that the coating is hard and has a well-ordered morphology. A reduction in wall recycling has consistently been observed after all boronization sessions. Comparison of the X-ray spectra in standard RFP plasmas before and after boronization indicates a slight decrease in the effective ionic charge.

  16. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite. The results show that both concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (Kd) between deposited brucite and final seawater are controll...

  17. Characterization of boron carbide with an electron microprobe

    Science.gov (United States)

    Matteudi, G.; Ruste, J.

    1983-01-01

    Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

  18. Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

    International Nuclear Information System (INIS)

    A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P2O5) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

  19. Glass manufacturing process having boron and fluorine pollution abating features

    Energy Technology Data Exchange (ETDEWEB)

    Froberg, M.L.; Schroeder, C.F.

    1981-11-03

    Boron and/or fluorine values are reclaimed from a boron and/or fluorine laden gas stream emanating from a glass melter by means of a preheating bed of glass-forming batch agglomerates. The boron and/or fluorine values in such gases are first reacted with a boron and/or fluorine reactive material and the gases then conveyed into such a preheating bed to separate at least a portion of the reaction products.

  20. Glass manufacturing process having boron and fluorine pollution abating features

    International Nuclear Information System (INIS)

    Boron and/or fluorine values are reclaimed from a boron and/or fluorine laden gas stream emanating from a glass melter by means of a preheating bed of glass-forming batch agglomerates. The boron and/or fluorine values in such gases are first reacted with a boron and/or fluorine reactive material and the gases then conveyed into such a preheating bed to separate at least a portion of the reaction products

  1. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 4th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 24 in 1992. First, clinical experiences of BNCT in the Kyoto University Research Reactor in 1992 were briefly reported. Then, the killing effects of boron cluster-containing nucleic acid precursors on tumor cells were shown (Chap. 2). The various trials of the optical resolution of B-p-boronophenylalanine for neutron capture therapy were made (Chap. 3). The borate-dextran gel complexes were investigated by the nuclear magnetic resonance spectroscopy. The stability constants of borate complexes were listed, and are useful in the solution chemistry of boron compounds (Chap. 4). The interactions between boron compounds and biological materials were studied by the paper electrophoresis which had been developed by us (Chap. 5). Molecular design of boron-10 carriers and their organic synthesis were reported (Chap. 6). Carborane-containing aziridine boron carriers which were directed to the DNA alkylation were synthesized and their cancer cell killing efficacies were tested (Chap. 7). The solution chemistry of deuterium oxide which is a good neutron moderator was reported, relating to the BNCT (Chap. 8). (author)

  2. Synthesis of multiwall boron nitride nanotubes dependent on crystallographic structure of boron

    International Nuclear Information System (INIS)

    Synthesis and growth of multiwall boron nitride nanotubes (BNNTs) under the B and ZrO2 seed system in the milling–annealing process were investigated. BNNTs were synthesized by annealing a mechanically activated boron powder under nitrogen environment. We explored the aspects of the mechanical activation energy transferred to milled crystalline boron powder producing structural disorder and borothermal reaction of the ZrO2 seed particles on the synthesis of BNNTs during annealing. Under these circumstances, the chemical reaction of amorphous boron coated on the seed nanoparticles with nitrogen synthesizing amorphous BN could be enhanced. It was found that amorphous BN was crystallized to the layer structure and then grown to multiwall BNNTs during annealing. Especially, bamboo-type multiwall BNNTs were mostly produced and grown to the tail-side of the nanotube not to the round head-side. Open gaps with ∼0.3 nm of the bamboo side walls of BNNTs were also observed. Based on these understandings, it might be possible to produce bamboo-type multiwall BNNTs by optimization of the structure and shape of boron coat on the seed nanoparticles. -- Highlights: ► Structure of B is a key factor for BNNT synthesis for milling–annealing method. ► Amorphous boron is coated on the seed during milling of crystalline boron. ► Amorphous BN nanoclusters are crystallized during annealing. ► Growing of bamboo BNNTs is not to the round head-side but to the tail-side.

  3. INFLUENCE OF FINE-DISPERSED BORON CARBIDE ON THE STRUCTURE AND CHARACTERISTICS OF IRON-BORON ALLOY

    Directory of Open Access Journals (Sweden)

    N. F. Nevar

    2016-02-01

    Full Text Available The influence of boron carbide as fine-dispersed material input into the melt on structure morphology, founding, technological and exploitation characterisstics of cast iron-boron material is shown.

  4. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    Directory of Open Access Journals (Sweden)

    Yuya Egawa

    2014-02-01

    Full Text Available In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conjugated azobenzenes have been synthesized. There are several types of boronic acid azobenzenes, and their characteristics tend to rely on the substitute position of the boronic acid moiety. For example, o-substitution of boronic acid to the azo group gives the advantage of a significant color change upon sugar addition. Nitrogen-15 Nuclear Magnetic Resonance (NMR studies clearly show a signaling mechanism based on the formation and cleavage of the B–N dative bond between boronic acid and azo moieties in the dye. Some boronic acid-substituted azobenzenes were attached to a polymer or utilized for supramolecular chemistry to produce glucose-selective binding, in which two boronic acid moieties cooperatively bind one glucose molecule. In addition, boronic acid-substituted azobenzenes have been applied not only for glucose monitoring, but also for the sensing of glycated hemoglobin and dopamine.

  5. Boron-containing amino carboxylic acid compounds and uses thereof

    International Nuclear Information System (INIS)

    Novel compounds which are useful for boron neutron capture therapy (BNCT) are disclosed. The compounds comprise a stable boron-containing group and an aminocycloalkane carboxylic acid group or a boronated acyclic hydrocarbon-linked amino carboxylic acid. Methods for synthesis of the compounds and for use of the compounds in BNCT are disclosed

  6. Enhanced Plasma Performance by ICRF Boronization

    Institute of Scientific and Technical Information of China (English)

    万宝年; 赵燕平; 李建刚; 宋梅; 吴振伟; 罗家融; 李成富; 王小明

    2002-01-01

    Boronization with carborane (C2B10H12) by ICRF has been applied routinely to the walls of HT-7 super-conducting tokamak for the reduction of impurity influx, especially carbon and oxygen. Significant suppression of metallic impurities and radiating power fraction are achieved. The improved confinement for both particle and energy is observed in full range of operation parameters. Energy balance analysis shows that electron heat diffusion coefficient is strongly reduced. Measurements by Langmuir probes at the edge plasma show that the poloidal velocity shear after boronization is changed to a profile favoring to good confinement. The main emphasis of this paper is to describe effects of boronization on aspects of the enhanced plasma performance.

  7. Anomalous electronic transport in boron carbides

    Science.gov (United States)

    Emin, D.; Samara, G. A.; Wood, C.

    The boron carbides are composed of icosahedral units, B12 and B11C1, linked together by strong intericosahedral bonds. With such distributions of icosahedral and intericosahedral compositions, boron carbides, B/sub 1-x/C/sub x/, are single phase over 0.1 less than or equal to x less than or equal to 0.2. The electronic transport properties of the boron carbides were examined within this single-phase region. Results are inconsistent with conventional analyses of both itinerant and hopping transport. Most striking are Seebeck coefficients which are both large and rapidly increasing functions of temperature despite thermally activated dc conductivities. These results manifest the hopping of small bipolaronic holes between carbon-containing icosahedral that are inequivalent in energy and electron-lattice coupling strength. Under hydrostatic pressures up to approx. 25 kbar, the dc conductivities increase with pressure. This anomalous behavior for hopping conduction reflects the distinctive structure and bonding of these materials.

  8. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT)

  9. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    Science.gov (United States)

    Singh, Bikramjeet; Singh, Paviter; Kumar, Manjeet; Thakur, Anup; Kumar, Akshay

    2015-05-01

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT).

  10. boron and boron nitride coated nuclear fuel production in plasma atmosphere

    International Nuclear Information System (INIS)

    In these study uranium dioxide (UO2) and 5, 10 % gadolinium oxide (Gd2O3) containing UO2 nuclear fuel pellets were coated with first boron nitride (BN) then boron (B) layers as the results of the reactions between boron trichloride (BCl3) with ammonia (NH3) and BCl3 with hydrogen (H2) in the medium of argon (Ar) plasma created at 650 W and 500 W and 27.12 MHz to increase the fuel burnup efficiency and reactor core life by the method of plasma enhanced chemical vapor deposition (PECVD). Grainy BN and B structures were observed on the photographs taken from scanning electron microscope (SEM)

  11. A system to deposit boron films (boronization) in the DIII-D tokamak

    International Nuclear Information System (INIS)

    A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

  12. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  13. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  14. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  15. Can Two-Dimensional Boron Superconduct?

    Science.gov (United States)

    Penev, Evgeni S; Kutana, Alex; Yakobson, Boris I

    2016-04-13

    Two-dimensional boron is expected to exhibit various structural polymorphs, all being metallic. Additionally, its small atomic mass suggests strong electron-phonon coupling, which in turn can enable superconducting behavior. Here we perform first-principles analysis of electronic structure, phonon spectra, and electron-phonon coupling of selected 2D boron polymorphs and show that the most stable structures predicted to feasibly form on a metal substrate should also exhibit intrinsic phonon-mediated superconductivity, with estimated critical temperature in the range of Tc ≈ 10-20 K. PMID:27003635

  16. Thermal conductivity behavior of boron carbides

    Science.gov (United States)

    Wood, C.; Zoltan, A.; Emin, D.; Gray, P. E.

    1983-01-01

    Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

  17. Boron carbide-based ceramics via polymer route synthesis

    International Nuclear Information System (INIS)

    Boron carbide is a ceramic material with excellent high temperature physical properties. As compared to conventional techniques, the preparation of boron carbide from polymeric precursors is attractive as this technique offers a number of unique advantages. In this paper, the screening of polymeric precursors to boron carbide will be discussed. Two promising boron carbide, carborane containing polymeric precursors have resulted in 60-70 wt.% ceramic yields. The chemistry of polymer synthesis and the transformations from the polymer to amorphous and crystalline boron carbide were investigated with infrared spectroscopy, NMR spectroscopy, thermal analysis, and x-ray diffraction

  18. Determination of carbon and sulphur in boron carbide

    International Nuclear Information System (INIS)

    Boron carbide is used in control rods of nuclear power reactors. The chemical specification for carbon in boron carbide ranges between 15 - 24 wt.% depending upon the grade of boron carbide. Hence carbon in boron carbide is to be determined accurately to find out the stoichiometry. Sulphur, which is present in trace quantities, is also to be determined to find out the purity of boron carbide. Carbon is determined by combustion followed by (i) thermal conductivity detection and (ii) infrared detection. Sulphur is determined by (i) combustion followed by infrared detection and (ii) vacuum combustion extraction - quadrupole mass spectrometry. The results are compared. (author)

  19. Direct evidence of metallic bands in a monolayer boron sheet

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Liu, Ro-Ya; Iimori, Takushi; Lian, Chao; Li, Hui; Chen, Lan; Wu, Kehui; Meng, Sheng; Komori, Fumio; Matsuda, Iwao

    2016-07-01

    The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the β12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S ¯ point and a pair of hole pockets near the X ¯ point, which is supported by the first-principles calculations. The metallic boron allotrope in β12 sheet opens the way to novel physics and chemistry in material science.

  20. Medical chemistry of boron neutron capture agents having pharmacological activity

    International Nuclear Information System (INIS)

    Boron neutron capture therapy (BNCT) is a cancer treatment that selectively destroys cancer cells following administering a cancer-selective drug containing stable isotope boron-10 and neutron irradiation. In clinical trial of BNCT, disodium mercaptoundecahydro-closo-dodecaborate (BSH) and p-boronophenylalanine (BPA) have been used, however, development of a new drugs with high cancer selectivity and therapeutic efficiency is expected. Therefore, we review boron-containing drugs as a boron neutron capture agents having pharmacological activity, BNCT research on boron-modified porphyrin derivatives which have photosensitivity and neutron capture activity and our proposed neutron sensitizing agent. (author)

  1. Inefficiency of high boron concentrations for cell killing in boron neutron capture therapy

    International Nuclear Information System (INIS)

    This study is to investigate the relationship between the cell-killing effect of the 10B(n, α)7Li capture reaction, intracellular boron concentration, and thermal neutron fluence in boron neutron capture therapy using in vitro cell survival based on a clonogenic assay, and biophysical analysis. Our results showed that the cell-killing yield of the 10B(n, α)7Li capture reaction per unit thermal neutron fluence declined with an increase in the intracellular boron concentration above 45 μg/ml 10B. The cell-killing effect was well described using an empirical power function of the intracellular boron concentration, with exponent 0.443. Knowledge of this effect will help in the optimization of BNCT. (author)

  2. Effect of metal hydrides on the burning characteristics of boron

    International Nuclear Information System (INIS)

    Highlights: • The effect of some metal hydrides on the burning characteristics of boron is studied for the first time. • We are the first to conduct a TG experiment on boron samples at high temperatures (a maximum of 1750 °C). • The thermal reaction process of boron is firstly divided into five stages according to the weight gain rate of the sample. • Specific values of metal hydrides on ignition delay time and combustion intensity of boron are obtained. - Abstract: In this study, the effect of four metal hydrides on the burning characteristics of boron was investigated. Thermogravimetric experiment results show that the thermal reaction process of boron samples can be divided into five stages. The thermal reactions of boron can be significantly promoted with LiH, which can reduce the initial temperature of the first violent reaction stage by ∼140 °C. The starting temperature of the post-reaction stage also decreases by ∼260 °C. The results of the laser ignition experiment suggest that all four metal hydrides can promote boron burning. Nonetheless, different metal hydrides display varied promotional effects. Among the studied hydrides, LiH is the most effective additive and shortens the ignition delay time of boron by ∼34.1%. Moreover, it enhances the combustion intensity of boron by ∼117.6%. The other three metal hydrides (CaH2, TiH2, and ZrH2) can also contribute to boron burning

  3. Removal properties of dissolved boron by glucomannan gel.

    Science.gov (United States)

    Oishi, Kyoko; Maehata, Yugo

    2013-04-01

    Boron ions have long been known to form complexes with the cis-diol group of a polysaccharide. Konjac glucomannan (KGM) which is one of polysaccharides was used to remove dissolved boron in this study. KGM forms a complex with boron, but does not remove boron from contaminated waters as well as other polysaccharides because of its high water solubility. Therefore, the removal efficiencies of dissolved boron were examined using both an insoluble KGM gel and KGM semi-gel. The former did not remove dissolved boron, but the latter did. The difference in the ability of boron removal was due to the presence of diol group inside. KGM loses free diol group during the process of gelation. On the other hand, the semi-gel gelated only surface layer in water has diol group inside. The boron removal capacity of the semi-gel was highest at pHs⩾11, when the boron species is present as B(OH)4(-). The capacity was slightly increased by the addition of Al, Ca and Mg under high pH conditions. This was due to co-precipitation of boron with Ca dissolved from the semi-gel. The boron adsorbed to the semi-gel easily was desorbed under low pH conditions and the hysteresis was not found. PMID:23260255

  4. Relationship Between Soil Boron Adsorption Kinetics and Rape Plant Boron Response

    Institute of Scientific and Technical Information of China (English)

    ZHUDUANWEI; PIMEIMEI; 等

    1997-01-01

    The boron adsorption kinetic experiment in soil by means a flow displacement technique showed that the kinetic data could be described with some mathematic equations.The average values of the coorealtion coefficeint for zero-order,first-order,parabolic diffusion ,Elovich,power function and eponential equations were 0.957,0.982,0.981,0.984,0.981 and 0.902 ,respectively,The correlation between adsorbed boron or its other expression form and time were the highest for first-order ,parabloic diffusion Elovich,and pwer function equations,the second for the zeroorder equation,and the tlowest for the exponential equation.The parabloic diffusion equation fitted well the expermiental results,with the least standard error among the six kinetic equation,showing that the monvemetn of boron from soil solution to soil colloid surface may be controlled by boron diffusion speed.The boron content of rape seedling obtained from soil cultvation was correlated with the rate constants of the kinetic equations.The constants of first-order ,parabloic diffusion,and exponential equaitions were significanlty correlated with the boron content of the crop of NPK treatment at a 95% probaility level ,with correation coeffecients being 0.686,0.691 and 0.64 and 0.641,respectively.In the case of zero-order equation,it Was significant at 99% probability level(r=0.736),These results showed that the adsorption kinetic constants of soil boron were closely related with the rape plant response to boron.

  5. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  6. A colorimetric determination of boron in biological sample for boron neutron capture therapy (BNCT)

    International Nuclear Information System (INIS)

    The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of glyemas and gluoblastomas grade III and IV than other therapies. During the treatment the levels of Na210B12H11SH must be known in several compartiments of the organism and with this purpose the method of colorimetric determination of boron using curcumine was established. This method is simple, reprodutible and adequate sensitivity for this control. (author)

  7. Effects of boron number per unit volume on the shielding properties of composites made with boron ores form China

    International Nuclear Information System (INIS)

    The total macroscopic removal cross sections, deposited energies and the absorbed doses of three new shielding composites loaded with specific boron-rich slag, boron concentrate ore and boron mud of China for 252Cf neutron source were investigated by experimental and Monte Carlo calculation. The results were evaluated by boron mole numbers per unit volume in composites. The half value layers of the composites were calculated and compared with that of Portland concrete, indicating that ascending boron mole numbers per unit volume in the composites can enhance the shielding properties of the composites for 252Cf neutron source. (authors)

  8. Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.

    1989-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  9. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  10. High-performance organic/inorganic hybrid heterojunction based on Gallium Arsenide (GaAs) substrates and a conjugated polymer

    Science.gov (United States)

    Jameel, D. A.; Felix, J. F.; Aziz, M.; Al Saqri, N.; Taylor, D.; de Azevedo, W. M.; da Silva, E. F.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2015-12-01

    In this paper, we present an extensive study of the electrical properties of organic-inorganic hybrid heterojunctions. Polyaniline (PANI) thin films were deposited by a very simple technique on (1 0 0) and (3 1 1)B n-type Gallium Arsenide (GaAs) substrates to fabricate hybrid devices with excellent electrical properties. The hybrid devices were electrically characterized using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements in the temperature range 20-440 K. The analysis of I-V characteristics based on the thermionic emission mechanism has shown a decrease of the barrier height and an increase of the ideality factor at lower temperatures for both hybrid devices. The interface states were analyzed by series resistance obtained using the C-G-V methods. The interface state density (Dit) of PANI/(1 0 0) GaAs devices is approximately one order of magnitude higher than that of PANI/(3 1 1)B GaAs devices. This behaviour is attributed to the effect of crystallographic orientation of the substrates, and was confirmed by DLTS results as well. Additionally, the devices show excellent air stability, with rectification ratio values almost unaltered after two years of storage under ambient conditions, making the polyaniline an interesting conductor polymer for future devices applications.

  11. Enhancement of metal - semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition

    International Nuclear Information System (INIS)

    This study presents a method for surface passivation using silicon dioxide (SiO2). The proposed method has shown great effectiveness on metal - semiconductor barrier height enhancement. A high quality SiO2 layer is developed via liquid phase deposition, a method which naturally leaves a doping-level fluorine residue in the SiO2. The addition of fluorine to enhance the Schottky barrier height (SBH) is first discussed. Experimental results are presented. It is found that this fluorine addition enhances the Schottky barrier height, which allows a larger positive gate bias for enhancement mode metal - semiconductor field-effect transistors, thus permitting the fabrication of digital logic circuits with improved noise margins and relaxed tolerance with regard to device threshold voltage uniformity. The SBH to n-gallium arsenide (GaAS) is found to be approximately 0.7 eV. Finally, the effective barrier height of the metal - insulator - semiconductor structure reached 1.03 eV after annealing. The enhancement of SBH has been attributed to the formation of these stable interface layers. A model for fluorine-enhanced SiO2 SBH enhancement is also presented. [copyright] 2001 American Institute of Physics

  12. CO2 laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements

    International Nuclear Information System (INIS)

    A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 1017 m−2 in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power

  13. Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

    Science.gov (United States)

    Hupfauer, T.; Matos-Abiague, A.; Gmitra, M.; Schiller, F.; Loher, J.; Bougeard, D.; Back, C. H.; Fabian, J.; Weiss, D.

    2015-06-01

    The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces--the reduced structural symmetry creates emergent spin-orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin-orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin-orbit fields.

  14. Synthesis and evaluation of boron folates for Boron-Neutron-Capture-Therapy (BNCT)

    Energy Technology Data Exchange (ETDEWEB)

    Kettenbach, Kathrin; Schieferstein, Hanno; Grunewald, Catrin; Hampel, Gabriele; Schuetz, Christian L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Iffland, Dorothee; Bings, Nicolas H. [Mainz Univ. (Germany). Inst. of Inorganic Chemistry and Analytical Chemistry; Reffert, Laura M. [Hannover Medical School (Germany). Radiopharmaceutical Chemistry; Ross, Tobias L. [Mainz Univ. (Germany). Inst. of Nuclear Chemistry; Hannover Medical School (Germany). Radiopharmaceutical Chemistry

    2015-07-01

    Boron neutron capture therapy (BNCT) employs {sup 10}B-pharmaceuticals administered for the treatment of malignancies, and subsequently irradiated with thermal neutrons. So far, clinical established pharmaceuticals like boron phenylalanine (BPA) or sodium boron mercaptate (BSH) use imperfect (BPA) or passive (BSH) targeting for accumulation at target sites. Due to the need of a selective transportation of boron drugs into cancer cells and sparing healthy tissues, we combined the BNCT approach with the specific and effective folate receptor (FR) targeting concept. The FR is overexpressed on many human carcinomas and provides a selective and specific target for molecular imaging as well as for tumor therapy. We synthesized and characterized a carborane-folate as well as a BSH-folate to study their in vitro characteristics and their potential as new boron-carriers for BNCT. Uptake studies were carried out using human KB cells showing a significant increase of the boron content in cells and demonstrating the successful combination of active FR-targeting and BNCT.

  15. Rapid mass-spectrometric determination of boron isotopic distribution in boron carbide.

    Science.gov (United States)

    Rein, J E; Abernathey, R M

    1972-07-01

    Boron isotopic ratios are measured in boron carbide by thermionic ionization mass spectrometry with no prior chemical separation. A powder blend of boron carbide and sodium hydroxide is prepared, a small portion is transferred to a tantalum filament, the filament is heated to produce sodium borate, and the filament is transferred to the mass spectrometer where the(11)B/(10)B ratio is measured, using the Na(2)BO(2)(+) ion. Variables investigated for their effect on preferential volatilization of (10)B include the sodium hydroxide-boron carbide ratio and the temperature and duration of filament heating. A series of boron carbide pellets containing natural boron, of the type proposed for the control rods of the Fast Flux Test Facility reactor, were analysed with an apparently unbiased result of 4.0560 for the (11)B/(10)B ratio (standard deviation 0.0087). The pellets contained over 3% metal impurities typically found in this material. Time of analysis is 45 min per sample, with one analyst. PMID:18961131

  16. Coadsorption of lanthanum with boron and gadolinium with boron on Mo(1 1 0)

    Science.gov (United States)

    Magkoev, Tamerlan T.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-05-01

    Submonolayer to multilayer coadsorption of lanthanum (La) with boron (B) and gadolinium (Gd) with boron on the surface of Mo(1 1 0) has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and work function ( ϕ) measurements. The equilibrium state of double adsorbate systems achieved either by adsorption of rare-earth metal (REM) on boron precovered Mo(1 1 0) surface held at room temperature or after moderate annealing of the system with opposite order of adsorption (B on REM films) is the layer which is the inhomogeneous mixture of boron and REM atoms with preferential concentration of boron in the surface area of the mixed film. The work function of such films even at REM to boron concentration ratio much higher than 1/6 are very close to the values of corresponding bulk LaB 6 and GdB 6, favoring assumption of surface rearrangement as the dominant reason of high electron emission efficiency of hexaborides. Almost total similarity of the results for La-B and Gd-B systems can be viewed as the consequence of weak participation of Gd f-electrons in determining the thermionic properties of corresponding double layers.

  17. Multi-dimensional boron transport modeling in subchannel approach: Part II. Validation of CTF boron tracking model and adding boron precipitation model

    International Nuclear Information System (INIS)

    Highlights: • Validation of implemented multi-dimensional subchannel boron transport model. • Extension of boron transport model to entrained droplets. • Implementation of boron precipitation model. • Testing of the boron precipitation model under transient condition. - Abstract: The risk of small-break loss of coolant accident (SB-LOCA) and other reactivity initiated transients caused by boron dilution in the light water reactors (LWRs), and the complications of tracking the soluble boron concentration experimentally inside the primary coolant have stimulated the interest in computational studies for accurate boron tracking simulations in nuclear reactors. In Part I of this study, the development and implementation of a multi-dimensional boron transport model with modified Godunov scheme based on a subchannel approach within the COBRA-TF (CTF) thermal-hydraulic code was presented. The modified Godunov scheme approach with a physical diffusion term was determined to provide the most accurate and precise solution. Current paper extends these conclusions and presents the model validation studies against experimental data from the Rossendorf coolant mixing model (ROCOM) test facility. In addition, the importance of the two-phase flow characteristics in modeling boron transient are emphasized, especially during long-term cooling period after the loss of coolant accident (LOCA) condition in pressurized water reactors (PWRs). The CTF capabilities of boron transport modeling are further improved based on the three-field representation of the two-phase flow utilized in the code. The boron transport within entrained droplets is modeled, and a model for predicting the boron precipitation under transient conditions is developed and tested. It is aimed to extend the applicability of CTF to reactor transient simulations, and particularly to a large-break loss of coolant accident (LB-LOCA) analysis

  18. PWR core response to boron dilution transient

    International Nuclear Information System (INIS)

    This paper illustrates the steps followed in order to set up a tool (composed of a plant model and of a procedure) that allows accounting for boron reactivity feedbacks during plant transients. The procedure that has been developed allows to find out the values of the boron feedback coefficients, given the differential boron worth, and to properly initialize the Thermal Hydraulic and the Neutronic (TH/NEU) system. Once the tool has been developed, it has been used to analyze different scenarios, resulting from deborated water injection from the reactor make-up system. The most important parameter, during this Reactivity Insertion Accidents (RIAs), is the Energy Released to the Fuel (ERF) and it has been monitored, in order to identify the situations when the fuel might be damaged (ERF > 250 kJ/kg, for high burnup fuel). The analyses have been performed using the RELAP5-3D computer code. The conclusion of the study is that the limited capability of modeling mixing phenomena provided by most common plant codes (such as RELAP5-3D) is not suitable to perform BE analyses of RIAs, since those accidents are so sensitive to boron concentration changes that the effect of uncertainties cannot be neglected. The use of Computational Fluid Dynamics (CFD) codes could reduce uncertainties enough to perform BE analyses and thus it should be recommended. (author)

  19. Pechmann Reaction Promoted by Boron Trifluoride Dihydrate

    Directory of Open Access Journals (Sweden)

    J. Mezger

    2005-08-01

    Full Text Available The Pechmann reaction of substituted phenols 1a-e with methyl acetoacetate (2 can be activated by boron trifluoride dihydrate (3 to give the corresponding 4-methyl- coumarin derivatives 4a-e in excellent yield (98-99 %.

  20. New insight into pecan boron nutrition

    Science.gov (United States)

    Alternate bearing by individual pecan [Carya illinoinensis (Wangenh.) K. Koch] trees is problematic for nut producers and processors. There are many unknowns regarding alternate bearing physiology, such as the relationship between boron and fruit set, nutmeat quality, and kernel maladies. Evidence...

  1. Channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    Channeled and random distributions of boron ions implanted over the energy range 50 keV--1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the or axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak

  2. Influence of pollution of boron chlorinity ratio

    Digital Repository Service at National Institute of Oceanography (India)

    Narvekar, P.V.; Zingde, M.D.

    Presence of boron in domestic wastewater has resulted in high B/CI ratio at some locations in the coastal water around Bombay. A widest range (0.215-0.281) of B/CI was observed at a location with high influence of wastewater release. The mean B...

  3. Boron carbide morphology changing under purification

    Science.gov (United States)

    Rahmatullin, I. A.; Sivkov, A. A.

    2015-10-01

    Boron carbide synthesized by using coaxial magnetoplasma accelerator with graphite electrodes was purified by two different ways. XRD-investigations showed content changing and respectively powder purification. Moreover TEM-investigations demonstrated morphology changing of product under purification that was discussed in the work.

  4. Boron carbide synthesis at plasma spray process

    Czech Academy of Sciences Publication Activity Database

    Ctibor, Pavel; Brožek, Vlastimil; Hofman, R.

    Bari : Department of Chemistry, University of Bari, 2003 - (d'Agostino, R.; Favia, P.; Fracassi, F.; Palumbo, F.). s. 631 [International Symposium on Plasma Chemistry/16th./. 22.06.2003-27.06.2003, Taormina] Institutional research plan: CEZ:AV0Z2043910 Keywords : boron carbide , plasma spray process Subject RIV: BL - Plasma and Gas Discharge Physics

  5. Joining of boron carbide using nickel interlayer

    International Nuclear Information System (INIS)

    Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250degC. The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

  6. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32. ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.163, year: 2014

  7. The manufacturing method of boron carbide

    International Nuclear Information System (INIS)

    The new method for manufacturing of boron carbide as powder with controlled purity and surface development has been described. The suspension of boric acid aqueous solution and carbon black in alcohol has been homogenized mechanically. Water and alcohol are then evaporated during mixing. After drying homogenous mixture is heated in temperature range of 1270-1870 C during one hour

  8. Novel Boron Based Multilayer Thermal Neutron Detector

    CERN Document Server

    SCHIEBER, M

    2010-01-01

    The detector contains four or more layers of natural Boron absorbing thermal neutrons. Thickness of a layer is 0.4 - 1.2 mg/cm2. The layers are deposited on one or on both sides of a metal surface used as contacts. Between the absorbing layers there are gas-filled gaps 3 - 6 mm thick. Electric field of 100 - 200 V/cm is applied to the gas-filled gaps. Natural Boron contains almost 20% of 10B isotope. When atoms of 10B capture a thermal neutron, nuclear reaction occurs, as a result of which two heavy particles - alpha particle and ion 7Li - from the thin absorber layer are emitted in opposing sides. One of the two particles penetrates into gas-filled gap between Boron layers and ionizes the gas. An impulse of electric current is created in the gas-filled gap actuated by the applied electric field. The impulse is registered by an electronic circuit. We have made and tested detectors containing from two to sixteen layers of natural Boron with an efficiency of thermal neutron registration from 2.9% to 12.5% accor...

  9. BCM6: New Generation of Boron Meter

    International Nuclear Information System (INIS)

    Full text of publication follows: Rolls-Royce has developed a new generation of boron meter, based on more than 30 years of experience. The Rolls-Royce BCM6 boron meter provides Nuclear Power Plant (NPP) operators with the boron concentration of the primary circuit. The meter provides continuous and safe measurements with no manual sampling and no human contact. In this paper, technical features, advantages and customer benefits of the use of the new generation of Rolls-Royce BCM6 boron meter will be detailed. Values and associated alarms are provides over different media: 4-20 mA outputs, relays, displays in the main control room and in the chemical lab, and digital links. A special alarm avoids unexpected homogeneous dilution of the primary circuit, which is a critical operational parameter. The Rolls-Royce BCM6 boron meter is fully configurable over a set of parameters allowing adaptation to customer needs. It has a differential capability, thus eliminating neutronic noise and keeping measurements accurate, even in the case of fuel clad rupture. Measurements are accurate, reliable, and have a quick response time. Equipment meets state-of-the-art qualification requests. Designed in 2008, the BCM6 boron meter is the newest equipment of Rolls-Royce boron meters product line. It has been chosen to equip the French EPR NPP and complies with the state-of-the-art of the technology. Rolls-Royce has more than 30 years of experience in Instrumentation and Controls with more than 75 NPP units operating worldwide. All of this experience return has been put in this new generation of equipment to provide the customer with the best operation. About Rolls-Royce Rolls-Royce is a global business providing integrated power systems for use on land, at sea and in the air. The Group has a balanced business portfolio with leading market positions. Rolls-Royce has a broad range of civil nuclear expertise, including work related to licensing and safety reviews, engineering design

  10. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  11. Higher boron rejection with a new TFC forward osmosis membrane

    KAUST Repository

    Valladares Linares, Rodrigo

    2014-07-17

    Due to the stringent limits for boron in drinking and irrigation water, water treatment facilities have to incur additional treatment to remove boron down to a safe concentration. Forward osmosis (FO) is a membrane technology that may reduce the energy required to remove boron present in seawater. In direct FO desalination hybrid systems, fresh water is recovered from seawater using a recoverable draw solution, FO membranes are expected to show high boron rejection. This study focuses on determining the boron rejection capabilities of a new generation thin-film composite (TFC) FO membrane compared to a first generation cellulose triacetate (CTA) FO membrane. The effects of water permeate flux, membrane structure, draw solute charge, and reverse solute flux on boron rejection were determined. For TFC and CTA FO membranes, experiments showed that when similar operating conditions are applied (e.g. membrane type and draw solute type) boron rejection decreases with increase in permeate flux. Reverse draw solute flux and membrane fouling have no significant impact on boron rejection. Compared to the first generation CTA FO membrane operated at the same conditions, the TFC FO membrane showed a 40% higher boron rejection capability and a 20% higher water flux. This demonstrates the potential for boron removal for new generation TFC FO membranes. © 2014 © 2014 Balaban Desalination Publications. All rights reserved.

  12. Boron removal from aqueous solution by direct contact membrane distillation

    International Nuclear Information System (INIS)

    The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 μg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution.

  13. ISOBORDAT: An Online Data Base on Boron Isotopes

    International Nuclear Information System (INIS)

    From 1986, boron isotope data in natural substances increased sharply in scientific publications. Analytical difficulties derived from complex geochemical matrices have been faced and interlaboratory calibrations reported in the boron literature. Boron isotopes are nowdays applied to investigate boron origin and migration in natural waters, sources of boron contamination, water-rock interactions and also contribute to water resource management. This is especially important in those areas where boron content exceeds the local regulations for drinking water supply and boron sources need to be identified. ISOBORDAT, an interactive database on boron isotope composition and content in natural waters is presented to the wider community of boron isotope users. The database's structure, scope and applications are reported, along with a discussion on δ11B values obtained in Italian waters. In the database boron data are structured in the following categories: rainwater, rivers, lakes, groundwater and potential contaminants. New categories (medium and high enthalpy fluids from volcanic and geothermal areas) are anticipated. ISOBORDAT aims to be as interactive as possible and will be developed taking into account information and suggestions received. The database is continually undergoing revision to keep pace with continuous data publication. Indications of data that are missing at present are greatly appreciated. (author)

  14. Synthesis and characterization of ammonium phosphate fertilizers with boron

    Directory of Open Access Journals (Sweden)

    ANGELA MAGDA

    2010-07-01

    Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

  15. Structure and single-phase regime of boron carbides

    Science.gov (United States)

    Emin, David

    1988-09-01

    The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B4C (the boron carbide with nominally 20% carbon) has B11C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B4C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C-->C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B13C2, subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B11C-->B12. Maxima of the free energy occur at the most ordered compositions: B4C,B13C2,B14C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides. The significant entropies associated with compositional disorder within the boron carbides, the high temperatures at which boron carbides are formed (>2000 K), and the relatively modest energies associated with replacing carbon atoms with boron atoms enable the material's entropy to be usually important in determining its composition. As a result, boron carbides are able to exist in a wide range of compositions.

  16. Potential of using boric acid as a boron drug for boron neutron capture therapy for osteosarcoma

    International Nuclear Information System (INIS)

    Osteosarcoma is a malignant tumor commonly found in human and animals. The ability of boric acid (BA) to accumulate in osteosarcoma due to the mechanism of the bone formation of cancer cells would make boron neutron capture therapy (BNCT) an alternative therapy for osteosarcoma. This study evaluated the feasibility of using BA as the boron drug for BNCT of bone cancer. The cytotoxicity of BA to L929 cells exceeded that of UMR-106 cells. With 25 μg 10B/mL medium of BA treatment, the boron concentration in UMR-106 cells was higher than that in L929 cells. The biodistribution and pharmacokinetics of BA in Sprague–Dawley (SD) rats were studied by administrating 25 mg 10B/kg body weight to SD rats. Blood boron level decreased rapidly within one hour after BA injection. Boron concentration in the long bone was 4–6 time higher than that of blood. Results of this study suggest that BA may be a potential drug for BNCT for osteosarcoma.

  17. Diffusion Boronizing of H11 Hot Work Tool Steel

    Science.gov (United States)

    Jurči, Peter; Hudáková, Mária

    2011-10-01

    The H11 hot work tool steel was boronized at various processing parameters, austenitized, quenched, and tempered to a core hardness of 47-48 HRC. Microstructure, phase constitution, and microhardness of boronized layers were investigated. Effect of boronized region on the bulk properties was determined by the Charpy impact test. Structure of boronized regions is formed by the compound layers and diffusion inter-layer. The compound layers consisted of only (Fe,Cr)2B phase, but in the case of longer processing time, they contained also of the (Fe,Cr)B-phase. The inter-layer contained enhanced portion of carbides, formed due to carbon diffusion from the boride compounds toward the substrate. Microhardness of boronized layers exceeded considerably 2000 HV 0.1. However, boronizing led to a substantial lowering of the Charpy impact toughness of the material.

  18. Boron Rich Solids Sensors, Ultra High Temperature Ceramics, Thermoelectrics, Armor

    CERN Document Server

    Orlovskaya, Nina

    2011-01-01

    The objective of this book is to discuss the current status of research and development of boron-rich solids as sensors, ultra-high temperature ceramics, thermoelectrics, and armor. Novel biological and chemical sensors made of stiff and light-weight boron-rich solids are very exciting and efficient for applications in medical diagnoses, environmental surveillance and the detection of pathogen and biological/chemical terrorism agents. Ultra-high temperature ceramic composites exhibit excellent oxidation and corrosion resistance for hypersonic vehicle applications. Boron-rich solids are also promising candidates for high-temperature thermoelectric conversion. Armor is another very important application of boron-rich solids, since most of them exhibit very high hardness, which makes them perfect candidates with high resistance to ballistic impact. The following topical areas are presented: •boron-rich solids: science and technology; •synthesis and sintering strategies of boron rich solids; •microcantileve...

  19. Boron carbide whisker and platelet reinforced ceramic matrix composites

    International Nuclear Information System (INIS)

    Boron carbide whisker and platelet-reinforced alumina and boron-carbide-whisker-reinforced silicon carbide composites were prepared by hot-pressing. The mechanical properties of hot-pressed boron carbide platelet and whisker-reinforced composites are better than the inherent ceramic matrix. A maximum fracture toughness, K(lc), of 9.5 MPa sq rt m is achieved for alumina/boron carbide whisker composites, 8.6 MPa sq rt m is achieved for alumina/boron carbide platelet composites, and 3.8 MPa sq rt m is achieved for silicon carbide/boron carbide whisker composites. The fracture toughness is dependent on the volume fraction of the platelets and whiskers. 12 refs

  20. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells.

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm(2) is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10(3) cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  1. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300–865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 103 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  2. Van Hove singularities of some icosahedral boron-rich solids by differential reflectivity spectra

    Science.gov (United States)

    Werheit, Helmut

    2015-09-01

    Differential reflectivity spectra of some icosahedral boron rich solids, β-rhombohedral boron, boron carbide and YB66-type crystals, were measured. The derivatives yield the van Hove singularities, which are compared with results obtained by other experimental methods.

  3. Multidimensional boron transport modeling in subchannel approach

    International Nuclear Information System (INIS)

    The main objective of this study is to implement a solute tracking model into the subchannel code CTF for simulations of boric acid transients. Previously, three different boron tracking models have been implemented into CTF and based on the applied analytical and nodal sensitivity studies the Modified Godunov Scheme approach with a physical diffusion term has been selected as the most accurate and best estimate solution. This paper will present the implementation of a multidimensional boron transport modeling with Modified Godunov Scheme within a thermal-hydraulic code based on a subchannel approach. Based on the cross flow mechanism in a multiple-subchannel rod bundle geometry, heat transfer and lateral pressure drop effects will be discussed in deboration and boration case studies. (author)

  4. Synthesis and characterization of boron nitrides nanotubes

    International Nuclear Information System (INIS)

    This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

  5. Microadditions of boron and vanadium in ADI

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2007-01-01

    Full Text Available In the second part of the study, describing the role of vanadium and boron microadditions in the process of structure formation in heavy-walled castings made from ADI, the results of own investigations were presented. Within this study two series of melts of the ductile iron were made, introducing microadditions of the above mentioned elements to both unalloyed ductile iron and the ductile iron containing high levels of nickel and copper (the composition typical of ADI. Melts were conducted with iron-nickel-magnesium master alloy. Thermal analysis of the solidification process of the cast keel blocks was conducted, the heat treatment of the alloys was carried out, and then the effect of the introduced additions of boron and vanadium on the hardenability of the investigated cast iron was examined and evaluated.

  6. The spectrophotometric determination of boron in tourmalines

    Directory of Open Access Journals (Sweden)

    LJILJANA JAKSIC

    2005-02-01

    Full Text Available A procedure for the spectrophotometric determination of macro amounts of boron in tourmaline with azomethine H is described. The used tourmaline concentrate was obtained by magnetic separation and heavy-liquids purification of the schorl zone of pegmatite or granite aplite. The samples of tourmaline were decomposed by fusion with anhydrous sodium carbonate and taken up in dilute hydrochloric acid. The interfering effects of iron and aluminium were eliminated by masking with an EDTA – NTA solution. After pH adjustment, the boron was reacted with azomethine H and the absorbance of the obtained coloured complex was measured at 415 nm. The results are compared with those obtained by other procedures. The relative error of the determination was less than 3 %.

  7. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  8. Boron-10 ABUNCL Models of Fuel Testing

    Energy Technology Data Exchange (ETDEWEB)

    Siciliano, Edward R.; Lintereur, Azaree T.; Kouzes, Richard T.; Ely, James H.

    2013-10-01

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results from MCNP simulations of the General Electric Reuter-Stokes Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) active configuration model with fuel pins previously measured at Los Alamos National Laboratory. A comparison of the GE-ABUNCL simulations and simulations of 3He based UNCL-II active counter (the system for which the GE-ABUNCL was targeted to replace) with the same fuel pin assemblies is also provided.

  9. Behavior of Disordered Boron Carbide under Stress

    Science.gov (United States)

    Fanchini, Giovanni; McCauley, James W.; Chhowalla, Manish

    2006-07-01

    Gibbs free-energy calculations based on density functional theory have been used to determine the possible source of failure of boron carbide just above the Hugoniot elastic limit (HEL). A range of B4C polytypes is found to be stable at room pressure. The energetic barrier for shock amorphization of boron carbide is by far the lowest for the B12(CCC) polytype, requiring only 6GPa≈P(HEL) for collapse under hydrostatic conditions. The results clearly demonstrate that the collapse of the B12(CCC) phase leads to segregation of B12 and amorphous carbon in the form of 2 3 nm bands along the (113) lattice direction, in excellent agreement with recent transmission electron microscopy results.

  10. Investigation of boron segregation in low carbon steel

    OpenAIRE

    J. Lis; Lis, A; Kolan, C.

    2011-01-01

    Traces of born in the range 0,002-0,009 % are usually added to many grades of steel. The effect of boron on phase transformations and hardenability of low carbon low alloy steels depends on the form of its behavior in solid solution either in segregations or in precipitations. Temperature and cooling rate determine the existence of boron segregations on grain boundaries. In present paper simulations of boron concentrations were calculated with computer programme DICTRA for low carbon 0,08 %C ...

  11. Boron/aluminum shelf for shuttle orbiter

    International Nuclear Information System (INIS)

    Boron/aluminum skins and channels were used in the fabrication of a prototype honeycomb sandwich avionics shelf. The avionic shelves are stiffness-critical and must be vibration tolerant. In conjunction with the shelf mounting system, they must isolate the avionics equipment from the severe vibration of the primary and secondary structure nearby. Design rationale, fabrication procedures, vibration test criteria and test results are presented. (9 fig) (U.S.)

  12. Boron Nitride Nanosheets for Metal Protection

    OpenAIRE

    Li, Lu Hua; Xing, Tan; Chen, Ying; Jones, Rob

    2015-01-01

    Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insu...

  13. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  14. Formation and Structure of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    Jiang ZHANG; Zongquan LI; Jin XU

    2005-01-01

    Boron nitride (BN) nanotubes were simply synthesized by heating well-mixed boric acid, urea and iron nitrate powders at 1000℃. A small amount of BN nanowires was also obtained in the resultants. The morphological and structural characters of the BN nanostructures were studied using transmission electron microscopy. Other novel BN nanostructures, such as Y-junction nanotubes and bamboo-like nanotubes, were simultaneously observed. The growth mechanism of the BN nanotubes was discussed briefly.

  15. Thermal conductivity of nanostructured boron nitride materials.

    Science.gov (United States)

    Tang, Chengchun; Bando, Yoshio; Liu, Changhong; Fan, Shoushan; Zhang, Jun; Ding, Xiaoxia; Golberg, Dmitri

    2006-06-01

    We have measured the thermal conductivity of bulky pellets made of various boron nitride (BN)-based nanomaterials, including spherical nanoparticles, perfectly structured, bamboo-like nanotubes, and collapsed nanotubes. The thermal conductivity strongly depends on the morphology of the BN nanomaterials, especially on the surface structure. Spherical BN particles have the lowest thermal conductivity while the collapsed BN nanotubes possess the best thermoconductive properties. A model was proposed to explain the experimental observations based on the heat percolation passage considerations. PMID:16722739

  16. Channeling of boron ions into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lecrosnier, D.; Paugam, J.; Gallou, J.

    1977-04-01

    Channeled and random distributions of boron ions implanted over the energy range 50 keV--1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the <110> or <111> axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak.

  17. Boron content of the Freetown drinking water

    International Nuclear Information System (INIS)

    A method is described for the analyses of water samples in the Freetown area of Sierra Leone for their boron concentrations. The method involves alpha counting during thermal neutron irradiation of the samples utilising the 10Ba(n,α)7Li reaction. The alpha counting is via a liquid scintillator which also incorporates the water samples. A detailed outline of the experimental setup is given and the results obtained from measurement on water samples presented. (author)

  18. Boron carbide synthesis by plasma spray process

    Czech Academy of Sciences Publication Activity Database

    Ctibor, Pavel; Brožek, Vlastimil; Hofman, R.

    Bari : Department of Chemistry, University of Bari, 2003 - (d'Agostino, R.; Favia, P.; Fracassi, F.; Palumbo, F.), s. - [International Symposium on Plasma Chemistry/16th./. Taormina (IT), 22.06.2003-27.06.2003] R&D Projects: GA ČR GA104/01/0149 Institutional research plan: CEZ:AV0Z2043910 Keywords : boron carbide , plasma spray, synthesis Subject RIV: BL - Plasma and Gas Discharge Physics

  19. Plasma Spray Deposition of Boron Carbide

    Czech Academy of Sciences Publication Activity Database

    Brožek, Vlastimil; Hofman, R.; Ctibor, Pavel; Hrabovský, Milan

    Praha : MAXDORF, s.r.o., 2002 - (Nitsch, K.; Rodová, M.). s. 11-12 [Development of Materials Science in Research and Education.. 10.09.2002-12.09.2002, Ostravice] R&D Projects: GA ČR GA104/01/0149; GA ČR GA202/01/1563 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma spray, boron carbide Subject RIV: BL - Plasma and Gas Discharge Physics

  20. Electron-Spin Resonance in Boron Carbide

    Science.gov (United States)

    Wood, Charles; Venturini, Eugene L.; Azevedo, Larry J.; Emin, David

    1987-01-01

    Samples exhibit Curie-law behavior in temperature range of 2 to 100 K. Technical paper presents studies of electron-spin resonance of samples of hot pressed B9 C, B15 C2, B13 C2, and B4 C. Boron carbide ceramics are refractory solids with high melting temperatures, low thermal conductives, and extreme hardnesses. They show promise as semiconductors at high temperatures and have unusually large figures of merit for use in thermoelectric generators.

  1. Functionalized boron-dipyrromethenes and their applications

    OpenAIRE

    M. Ravikanth, M; Vellanki,Lakshmi; Sharma,Ritambhara

    2016-01-01

    Vellanki Lakshmi, Ritambhara Sharma, Mangalampalli Ravikanth Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, IndiaAbstract: Boron-dipyrromethenes/BF2-dipyrrins (BODIPYs) are highly fluorescent dyes with a wide range of applications in various fields because of their attractive photophysical properties. One of the salient features of BODIPYs is that the properties of the BODIPY can be fine-tuned at will by selectively introducing the substituent(s) at the desired locati...

  2. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  3. Clinical aspects of boron neutron capture therapy

    International Nuclear Information System (INIS)

    Boron neutron capture therapy is potentially useful in treating malignant tumors of the central nervous system and is technically possible. Additional in vitro and in vivo testing is required to determine toxicities, normal tissue tolerances and tissue responses to treatment parameters. Adequate tumor uptake of the capture agent can be evaluated clinically prior to implementation of a finalized treatment protocol. Phase I and Phase II protocol development, clinical pharmacokinetic studies and neutron beam development

  4. Application of Cycloaddition Reactions to the Syntheses of Novel Boron Compounds

    OpenAIRE

    John A. Maguire; Hosmane, Narayan S; Yinghuai Zhu; Xiao Siwei

    2010-01-01

    This review covers the application of cycloaddition reactions in forming the boron-containing compounds such as symmetric star-shaped boron-enriched dendritic molecules, nano-structured boron materials and aromatic boronic esters. The resulting boron compounds are potentially important reagents for both materials science and medical applications such as in boron neutron capture therapy (BNCT) in cancer treatment and as drug delivery agents and synthetic intermediates for carbon-carbon cross-c...

  5. Considerations for boron neutron capture therapy studies

    International Nuclear Information System (INIS)

    Radiotherapy is indispensable as a mean to eradicate deeply or infiltrating tumor tissue that can not be removed surgically. Therefore, it is not selective and may also kill the surrounding health tissue. The principle of BNCT (Boron Neutron Capture Therapy) consist in targeting a tumor selectively with a boron-10 compound. This nuclide has a large capture cross section for thermal neutrons and the nuclear reaction and the delivered energy in locus will selective the tumor. Since its initial proposal in 1963 BNCT has made much progress, however it is not used in a routine treatment. In this work it was approached some complex procedures, as the obtention of selective boron compounds, the adequate set up of neutron beams, the biodistribution, the in vivo and in vitro studies, and also human patients treatments. This work provide fundamentals about BNCT to professional of different areas of knowledge since it comprises multidisciplinary study. It includes appendixes for the ones not related to the field for a better comprehension of the many aspects involved. It is also presented a glossary containing technical and basic aspects involved. It is also presented a glossary containing technical and basic terms referred in the work. (author). 174 refs, 1 fig, 12 apps

  6. Boron impregnation treatment of Eucalyptus grandis wood.

    Science.gov (United States)

    Dhamodaran, T K; Gnanaharan, R

    2007-08-01

    Eucalyptus grandis is suitable for small timber purposes, but its wood is reported to be non-durable and difficult to treat. Boron compounds being diffusible, and the vacuum-pressure impregnation (VPI) method being more suitable for industrial-scale treatment, the possibility of boron impregnation of partially dry to green timber was investigated using a 6% boric acid equivalent (BAE) solution of boric acid and borax in the ratio 1:1.5 under different treatment schedules. It was found that E. grandis wood, even in green condition, could be pressure treated to desired chemical dry salt retention (DSR) and penetration levels using 6% BAE solution. Up to a thickness of 50mm, in order to achieve a DSR of 5 kg/m(3) boron compounds, the desired DSR level as per the Indian Standard for perishable timbers for indoor use, it was found that neither the moisture content of wood nor the treatment schedule posed any problem as far as the treatability of E. grandis wood was concerned. PMID:17046244

  7. Analysis of heterogeneous boron dilution sequences

    International Nuclear Information System (INIS)

    In the scope of the international SETH project (focused on boron dilution sequences), the Spanish Nuclear Regulatory Commission (CSN) and the electric energy industry of Spain (UNESA) have promoted in Spain a national project for the analysis and application of the SETH results to the Spanish nuclear power plants. As part of this project, our team has performed a review and analysis of the different sequences that could lead to a boron dilution in the primary circuit of a pressurized water reactor (PWR). On a first stage of the project we have analyzed the different sequences and the phenomenologies that could lead to inadvertent boron dilution in the primary system (about twenty different sequences are described in the literature), the core damage frequency of each one, the projects and experiments carried out on several experimental facilities and the modifications performed in order to avoid or to mitigate this kind of sequences. On a second one we have reviewed the relation between the operating procedures, Westinghouse design reactors, and this kind of sequences. Finally we have analyzed the simulation problems of these kind of sequences and performed several numerical simulations with the TRAC-M (TRACE) code applied to numerical benchmarks and also to a 3D vessel model. (author)

  8. Boron-containing nuclear safety materials

    International Nuclear Information System (INIS)

    As insurance against reactor runaway or other unplanned excursions, gas-cooled, graphite-moderated reactors are provided with a secondary shut-down mechanism which serves as a back-up to the primary control rod system. This back-up includes a hopper located above fuel channels in the core, equipped with a quick discharge mechanism, which is filled with boron-containing spheres. In an emergency, this hopper discharges the spheres which then cascade down the channels and ''poison'' the uranium fission reaction by absorbing thermal neutrons - the propagators of the chain reaction. Within six months time, a process was successfully developed based on silicon carbide reaction-bonding, which yielded a strong, hard, oxidation-resistant, boron-containing shut-down ball. Test materials were exposed to water saturated argon for three hours at each of several temperatures. While normal boron carbide-graphite balls were completely vaporized, the Cerashield balls remained basically unaffected. Had the reactor at Chernobyl been outfitted with Cerashield shut-down balls, it might never have become famous

  9. Boron dose enhancement for Cf-252 brachytherapy

    International Nuclear Information System (INIS)

    Full text: Monte Carlo modelling of a Cf-252 source in water and in tissue has shown that there is a significant therapeutic advantage obtained if B-10 is present in the tumour cells. This study analyses the advantage in terms of therapeutic margin, defined as the distance from the border of the treatment volume where boron-loaded tumour cells will receive a therapeutic dose. Calculations were made with MCNP version 4a on a Pentium 60 MHz computer. Large voxel sizes allowed 70 minute runs to achieve statistical uncertainties of 5% or less for 100,000 source neutrons. Later runs with smaller voxels confirmed the accuracy of the initial calculations. Calculations were made for treatment volume radii up to 11 cm and 30 ppm boron-10. The therapeutic margin for radii in the range 3-9 cm is approximately 10% of the tumour radius. This results in a 30% increase in the volume inside which peripheral tumour cells may receive a therapeutic dose. The median therapeutic ratio within the therapeutic margin varied from 1.05 at 3 cm up to 1.25 at 10 cm. Thus there is little benefit for less advanced tumours with thickness less than 3 cm. However, cervical cancer frequently presents in an advanced state in Southeast Asia and in Aboriginal communities in Australia, partially attributable to low Pap smear screening rates. These conclusions support the development and testing of boron compounds in in vitro and in vivo models for cervical cancer

  10. Boron removal from molten silicon using sodium-based slags

    Institute of Scientific and Technical Information of China (English)

    Yin Changhao; Hu Bingfeng; Huang Xinming

    2011-01-01

    Slag refining,as an important option for boron removal to produce solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si),has attracted increasing attention.In this paper,Na2CO3-SiO2 systems were chosen as the sodium-based refining slag materials for boron removal from molten silicon.Furthermore,the effect of Al2O3 addition for boron removal was studied in detail,which showed that an appropriate amount of Al2O3 can help retention of the basicity of the slags,hence improving the boron removal rate.

  11. Boron distribution in normal and impaired vascular tissue

    International Nuclear Information System (INIS)

    The microdistribution of boron compounds and the response to Boron Neutron Capture Therapy (BNCT) in normal or impaired vascular structures have not been fully investigated. In this study, we measured the boron concentrations in rat normal vascular tissue for a potential application of BNCT to prevent restenosis following carotid stenting. Male inbred Wistar rats, 6 weeks of age, were used. After intravenous administration of boron compounds (BSH, BPA, or boron porphyrins), rats were killed at either 1, 2, or 3 hours, and the aortic arch, vena cava, blood, liver, kidney, muscle, skin, and brain were collected for measuring boron concentrations in the sample. Boron concentrations in vascular structures, although dependent on the time after administration, are higher than those in blood and surrounding tissue such as muscle or skin. Given that boron compounds such as boron porphyrins are incorporated into arterial tissues, and more into impaired than in normal intima, BNCT might be effective in inhibiting restenosis following carotid artery stenting or coronary artery stenting. (author)

  12. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite and the influence of it on Mg/Ca-SST proxy and δ11B-pH proxy. The results show that both the concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (

  13. Boron isotope fractionation during brucite deposition from artificial seawater

    OpenAIRE

    J. Xiao; Xiao, Y. K.; Liu, C. Q.; Z. D. Jin

    2011-01-01

    Experiments involving boron incorporation into brucite (Mg(OH)2) from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite and the influence of it on Mg/Ca-SST proxy and δ11B-pH proxy. The results show that both the concentration of boron in deposited brucite ([B]d) and its boron partition coefficient (Kd) between deposited brucite and final seawater are control...

  14. Combustion synthesis of boron carbide - a spectroscopic studies

    International Nuclear Information System (INIS)

    Boron Carbide is one of the hardest materials known, ranking third behind diamond and cubic boron nitride. It is the hardest material produced in tonnage quantities. Boron carbide (BxCx) enriched in the 10B isotope is used as a control rod material in the nuclear industry due to its high neutron absorption cross section and other favorable physico-chemical properties. Conventional methods of preparation of boron carbide are energy intensive processes accompanied by huge loss of boron. Attempts were made at IGCAR Kalpakkam to develop energy efficient and cost effective methods to prepare boron carbide. Nuclear applications of boron carbide include shielding, control rod and shut down pellets. Within control rods, boron carbide is often powdered, to increase its surface area. The products of the gel combustion and microwave synthesis experiments were characterized for phase purity by X-ray diffraction (XRD). The carbide formation was ascertained using finger-print spectroscopy of Fourier transform infrared (FTIR). Samples of pyrolized/microwave heated powder were characterized for surface morphology using electron microscope (SEM). The present work shows the recent advances in understanding of structural and chemical variation in boron carbide and their influence on morphology, optical and vibrational property result discussed in details. (author)

  15. Dosage of boron traces in graphite, uranium and beryllium oxide

    International Nuclear Information System (INIS)

    The problem of the dosage of the boron in the materials serving to the construction of nuclear reactors arises of the following way: to determine to about 0,1 ppm close to the quantities of boron of the order of tenth ppm. We have chosen the colorimetric analysis with curcumin as method of dosage. To reach the indicated contents, it is necessary to do a previous separation of the boron and the materials of basis, either by extraction of tetraphenylarsonium fluoborate in the case of the boron dosage in uranium and the beryllium oxide, either by the use of a cations exchanger resin of in the case of graphite. (M.B.)

  16. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  17. ADSORPTION POTENTIAL OF UNMODIFIED RICE HUSK FOR BORON REMOVAL

    OpenAIRE

    Hasfalina Che Man,; Wei Hong Chin,; Maryam Rahmati Zadeh,; Mohd Rashid Mohd Yusof

    2012-01-01

    A batch study of boron removal from aqueous solutions by adsorption using rice husk was carried out. The effect of selected parameters such as particle size, pH, adsorbent dosage, and initial concentration of adsorbate on boron removal was investigated in the study. Results showed that the maximum boron removal was obtained with the rice husk particle size between 0.425 mm and 1.0 mm at pH 5. Boron removal was increased with an increasing amount of adsorbent dosage but decreased as the initia...

  18. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    WEIYOUZHANG

    2001-01-01

    Relationships between seed yields of oilseed rape(Brassica napus L.) and extractable boron concen-trations in three soil layers(A,P and W) were investigated through ten experiments on three types of soils(Alluvic Entisols,Udic Ferrisols and Sagnic Anthrosols) in northern,Western and middle Zhejing Province.Among several mathematical models used to described the relationships,the polynomial equation,y=a+bx+cx2+dx3,where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil,was the best one.The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40-0.52 mg kg-1,The extractable boron concentration of the P layers of the soils was the most stable,The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  19. Critical Range of Soil Boron for Prognosis of Boron Deficiency in Oilseed Rape

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Relationships between seed yields of oilseed rape (Brassica napus L.) and extractable boron concen- trations in three soil layers (A, P and W) were investigated through ten experiments on three types of soils (Alluvic Entisols, Udic Ferrisols and Stagnic Anthrosols) in northern, western and middle Zhejiang Province. Among several mathematical models used to described the relationships, the polynomial equation, y = a + bx + cx2 + dx3, where y is the yield of oilseed rape seed and x the extractable boron concentration in P layer of soil, was the best one. The critical range of the concentrations corresponding to 90% of the maximum oilseed rape yield was 0.40~0.52 mg kg-1. The extractable boron concentration of the P layers of the soils was the most stable. The critical range determined was verified through the production practices of oilseed rape in Zhejiang and Anhui provinces.

  20. Mechanisms of the boron carbide and boron nitride preferred sputtering by low energy ions bombardment

    International Nuclear Information System (INIS)

    The ion irradiation of BN and B4C leads to enriching of the materials with the lighter component - borons as the experiment shows . With a view to explain this effect sputtering of BN and B4C under the irradiation by the He+ and Ar+ ions with the energy E0=0,5-5 keV has been calculated with computer modelling and the real structure of BN has been considered. In the case of B4C the calculations have been carried with Monte-Carlo code. It was shown that enriching of BN by boron may be accounted for building up the molecules N2 on the irradiated surface and their desorbing. The enriching of B4C with boron results from the difference of the binding energy of the B and C atoms. (author). 10 refs., 5 tabs

  1. Production process for boron carbide coated carbon material and boron carbide coated carbon material obtained by the production process

    International Nuclear Information System (INIS)

    A boron carbide coated carbon material is used for a plasma facing material of a thermonuclear reactor. The surface of a carbon material is chemically reacted with boron oxide to convert it into boron carbide. Then, it is subjected to heat treatment at a temperature of not lower than 1600degC in highly evacuated or inactive atmosphere to attain a boron carbide coated carbon material. The carbon material used is an artificial graphite or a carbon fiber reinforced carbon composite material. In the heat treatment, when the atmosphere is in vacuum, it is highly evacuated to less than 10Pa. Alternatively, in a case of inactive atmosphere, argon or helium gas each having oxygen and nitrogen content of not more than 20ppm is used. With such procedures, there can be obtained a boron carbide-coated carbon material with low content of oxygen and nitrogen impurities contained in the boron carbide coating membrane thereby hardly releasing gases. (I.N.)

  2. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S. [Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

    2016-02-15

    The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

  3. Determination of isotopic composition of boron in boron carbide by TIMS and PIGE: an inter-comparison study

    International Nuclear Information System (INIS)

    The paper reports a comparison of results on the determination of isotopic composition of boron in boron carbide (B4C) samples by Thermal Ionisation Mass Spectrometry (TIMS) and Particle Induced Gamma ray Spectrometry (PIGE). B4C samples having varying boron isotopic composition (natural, enriched with respect to 10B) and their synthetic mixtures) have been analysed by both the techniques. The 10B atom% was found to be in the range of 20-67%. (author)

  4. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  5. Determination of boron in graphite, boron carbide and glass by ICP-MS, ICP-OES and conventional wet chemical methods

    International Nuclear Information System (INIS)

    Boron is an important element of interest in nuclear reactor materials due to its high neutron absorption cross section (σ0 =3837 barns for 10B). In the present paper, R and D work and routinely used methods have been described for the analysis of case samples (1) Graphite where boron is present at trace levels, (2) Boron Carbide having boron concentration of about 80% and (3) Glass containing 4-6 % boron. (author)

  6. Cosmis Lithium-Beryllium-Boron Story

    Science.gov (United States)

    Vangioni-Flam, E.; Cassé, M.

    Light element nucleosynthesis is an important chapter of nuclear astrophysics. Specifically, the rare and fragile light nuclei Lithium, Beryllium and Boron (LiBeB) are not generated in the normal course of stellar nucleosynthesis (except Lithium-7) and are, in fact, destroyed in stellar interiors. This characteristic is reflected in the low abundance of these simple species. Up to recently, the most plausible interpretation was that galactic cosmic rays (GCR) interact with interstellar CNO to form LiBeB. Other origins have been also identified, primordial and stellar (Lithium-7) and supernova neutrino spallation (Lithium-7 and Boron-11). In contrast, Beryllium-9, Boron-10 and Lithium-6 are pure spallative products. This last isotope presents a special interest since the Lithium-7/Lithium-6 ratio has been measured in a few halo stars offering a new constraint on the early galactic evolution. However, in the nineties, new observations prompted astrophysicists to reassess the question. Optical measurements of the beryllium and boron abundances in halo stars have been achieved by the 10 meters KECK telescope and the Hubble Space Telescope. These observations indicate a quasi linear correlation between Be and B vs Fe, at least at low metallicity, unexpected on the basis of GCR scenario, predicting a quadratic relationship. As a consequence, the origin and the evolution of the LiBeB nuclei has been revisited. This linearity implies the acceleration of C and O nuclei freshly synthesized and their fragmentation on the the interstellar Hydrogen and Helium. Wolf-Rayet stars and supernovae via the shock waves induced, are the best candidates to the acceleration of their own material enriched into C and O; so LiBeB is produced independently of the Interstellar Medium chemical composition. Moreover, neutrinos emitted by the newly born neutron stars interacting with the C layer of the supernova could produce specifically Lithium-7 and Boron-11. This process is supported by the

  7. Synovectomy by neutron capture in boron

    International Nuclear Information System (INIS)

    The rheumatoid arthritis is an illness which affect approximately at 3% of the World population. This illness is characterized by the inflammation of the joints which reduces the quality of life and the productivity of the patients. Since, it is an autoimmune illness, the inflammation is due to the overproduction of synovial liquid by the increase in the quantity of synoviocytes. The rheumatoid arthritis does not have a definitive recovery and the patients have three options of treatment: the use of drugs, the surgery and the radio synovectomy. The synovectomy by neutron capture in Boron is a novel proposal of treatment of the rheumatoid arthritis that consists in using a charged compound with Boron 10 that is preferently incorporated in the synoviocytes and to a less extent in the rest of surrounding tissues of the joint. Then, the joint is exposed to a thermal neutron field that induces the reaction (n, α) in the 10 B. the products of this reaction place their energy inside synoviocytes producing their reduction and therefore the reduction of the joint inflammation. Since it is a novel procedure, the synovectomy by neutron capture in boron has two problems: the source design and the design of the adequate drug. In this work it has been realized a Monte Carlo study with the purpose to design a moderating medium that with a 239 Pu Be source in its center, produces a thermal neutron field. With the produced neutron spectra, the neutrons spectra and neutron doses were calculated in different sites inside a model of knee joint. In Monte Carlo studies it is necessary to know the elemental composition of all the joint components, for the case of synovia and the synovial liquid this information does not exist in such way that it is supposed that its composition is equal than the water. In this work also it has been calculated the kerma factors by neutrons of synovia and the synovial liquid supposing that their elemental composition are similar to the blood tissue

  8. Implementation of Low Boron Core for APR1400 Initial Cycle

    International Nuclear Information System (INIS)

    Low boron capability of a nuclear power plant is rather a qualitative specification requiring the nuclear power plant to be shut down by control rods alone at any time of a plant cycle according to EUR. The reduction of soluble boron is beneficial since it gives the reduction of the corrosive effects in the plant system and improves plant safety giving more negative MTC. Thus, it is necessary to reduce the amount of soluble boron for the criticality to achieve the low boron capability. However, the reduction of soluble boron has its own set of specific challenges that must be overcome. There are two methods to enable the reduction of soluble boron without modifying plant system significantly. The goal of this study is to investigate the loading pattern to achieve the soluble boron reduction for Shin-Kori Unit 5 APR1400 initial core using the low and high content gadolinia burnable absorbers with standard fuel rod enrichment and to verify the feasibility of low boron core with conventional gadolinia burnable absorbers only. For this study, KARMA has been employed to solve 2-D Transport equation, and ASTRA is used for full core analysis. It was possible to achieve the low boron core for APR1400 Cycle 1 using extended usage of two types of gadolinia burnable absorbers sacrificing fuel cycle economy a little bit while enhancing plant safety significantly. Gd rod patterns within an assembly were optimized through geometrical weighting and loading pattern was developed based on these patterns. The amount of soluble boron reduction achieved is 45.4%. The improvement in plant safety is significant resulting in the reduction of least negative best-estimate MTC by about 4 pcm. Also shutdown margin is increased slightly for low boron core. However, the behavior of axial power shape turns out to be undesirable showing a relatively large fluctuation caused by the more negative MTC. It was found that the low boron core might impose kind of operational difficulty. It is usually

  9. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    International Nuclear Information System (INIS)

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration

  10. Boron Removal in Radioactive Liquid Waste by Forward Osmosis Membrane

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Dooseong; Choi, Hei Min; Lee, Kune Woo; Moon Jeikwon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    These wastes contain about 0.3-0.8 wt% boric acid and have been concentrated through an evaporation treatment. Boric acid tends to crystallize owing to its solubility, and to plug the evaporator. The volume reduction obtained through evaporation is limited by the amount of boric acid in the waste. As an emerging technology, forward osmosis (FO) has attracted growing interest in wastewater treatment and desalination. FO is a membrane process in which water flows across a semi-permeable membrane from a feed solution of lower osmotic pressure to a draw solution of higher osmotic pressure. However, very few studies on the removal of boron by FO have been performed. The objective of this study is to evaluate the possibility of boron separation in radioactive liquid waste by FO. In this study, the performance of FO was investigated to separate boron in the simulated liquid waste under the factors such as pH, osmotic pressure, ionic strength of the solution, and membrane characteristic. The boron separation in radioactive borate liquid waste was investigated with an FO membrane. When the feed solution containing boron is treated by the FO membrane, the boron permeation depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7, and increases with an increase in the osmotic driving force. The boron flux of the CTA-ES and ALFD membrane orientation is higher than those of the CTA-NW and ALFF orientation, respectively. The boron permeation rate is constant regardless of the osmotic pressure and membrane orientation. The boron flux decreases slightly with the salt concentration, but it is not heavily influenced at a low salt concentration.

  11. Boron isotope fractionation during brucite deposition from artificial seawater

    Directory of Open Access Journals (Sweden)

    J. Xiao

    2011-03-01

    Full Text Available Experiments involving boron incorporation into brucite (Mg(OH2 from magnesium-free artificial seawater with pH values ranging from 9.5 to 13.0 were carried out to better understand the incorporation behavior of boron into brucite. The results show that both concentration of boron in deposited brucite ([B]d and its boron partition coefficient (Kd between deposited brucite and final seawater are controlled by pH of the solution. The incorporation capacity of boron into brucite is much stronger than that into oxides and clay minerals. The isotopic compositions of boron in deposited brucite (δ11Bd are higher than those in the associated artificial seawater (δ11Bisw with fractionation factors ranging between 1.0177 and 1.0569, resulting from the preferential incorporation of B(OH3 into brucite. Both boron adsorptions onto brucite and precipitation reaction of H3BO3 with brucite exist during deposition of brucite from artificial seawater. The simultaneous occurrence of both processes determines the boron concentration and isotopic fractionation of brucite. The isotopic fractionation behaviors and mechanisms of boron incorporated into brucite are different from those into carbonates. Furthermore, the isotopic compositions of boron in modern corals might be affected by the existence of brucite in madrepore and the preferential incorporation of B(OH3 into brucite. An exploratory study for the influence of brucite on the boron isotopic composition in modern corals is justifiable.

  12. Influence of Boron on transformation behavior during continuous cooling of low alloyed steels

    Energy Technology Data Exchange (ETDEWEB)

    Terzic, A., E-mail: Adnan.Terzic@imf.tu-freiberg.de [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Calcagnotto, M. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Guk, S. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Schulz, T. [Salzgitter Mannesmann Forschung GmbH, Eisenhüttenstr. 99, 38239 Salzgitter (Germany); Kawalla, R. [Technische Universität Bergakademie Freiberg, Institute of Metal Forming, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany)

    2013-11-01

    Abstracts: The phase transformation behavior during continuous cooling of low-carbon (LC) Boron-treated steels was studied. Furthermore, the influence of combining Boron with Nb or Ti or V on transformation kinetics was investigated. Additions of Boron to LC steels have a strong influence on the ferrite transformation. By adding 30 ppm Boron to a Boron-free reference alloy the suppressing effect on the ferrite transformation is most pronounced, whereas 10 ppm Boron has almost no effect and 50 ppm Boron the same effect as 30 ppm Boron. Thereby the critical Boron concentration for transformation kinetics in this alloying concept is 30 ppm. The combination of Boron with Ti shifts the phase fields to shorter times and increase the ferrite start temperature, whereas the combination of B+V and B+Nb only affects the ferrite start temperature. Hardness values are mostly influenced by the presence of Boron and strongly depend on the cooling rate.

  13. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    Energy Technology Data Exchange (ETDEWEB)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  14. The investigation of parameters affecting boron removal by electrocoagulation method

    International Nuclear Information System (INIS)

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm2. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl2. Added CaCl2 increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions

  15. Determination of boron in silicates after ion exchange separation

    Science.gov (United States)

    Kramer, H.

    1955-01-01

    Existing methods for the determination of boron in silicates are not entirely satisfactory. Separation as the methyl ester is lengthy and frequently erratic. An accurate and rapid method applicable to glass, mineral, ore, and water samples uses ion exchange to remove interfering cations, and boron is determined titrimetrically in the presence of mannitol, using a pH meter to indicate the end point.

  16. Low-dimensional boron structures based on icosahedron B12

    Science.gov (United States)

    Kah, C. B.; Yu, M.; Tandy, P.; Jayanthi, C. S.; Wu, S. Y.

    2015-10-01

    One-dimensional icosahedral boron chains and two-dimensional icosahedral boron sheets (icosahedral α, δ6, and δ4 sheets) that contain icosahedra B12 as their building units have been predicted in a computer simulation study using a state-of-the-art semi-empirical Hamiltonian. These novel low-dimensional icosahedral structures exhibit interesting bonding and electronic properties. Specifically, the three-center, two-electron bonding between icosahedra B12 of the boron bulk (rhombohedral boron) transforms into a two-center bonding in these new allotropes of boron sheets. In contrast to the previously reported stable buckled α and triangular boron monolayer sheets, these new allotropes of boron sheets form a planar network. Calculations of electronic density of states (DOS) reveal a semiconducting nature for both the icosahedral chain and the icosahedral δ6 and δ4 sheets, as well as a nearly gapless (or metallic-like) feature in the DOS for the icosahedral α sheet. The results for the energy barrier per atom between the icosahedral δ6 and α sheets (0.17 eV), the icosahedral δ6 and δ4 sheets (0.38 eV), and the icosahedral α and δ4 sheets (0.27 eV), as indicated in the respective parentheses, suggest that these new allotropes of boron sheets are relatively stable.

  17. Adsorption characteristics of arsenic and boron by soil

    Energy Technology Data Exchange (ETDEWEB)

    Sakata, M.

    1986-01-01

    In order to obtain baseline data concerning the surface and ground water pollution caused by coal ash disposal, adsorption characteristics of arsenic (III) and boron by soil have been studied through laboratory experiments. The main results are as follows: (1) Arsenic (III) and boron adsorption on soil was strongly dependent on pH with adsorption maxima at pH 8 and 8-9, respectively. (2) Arsenic (III) and boron adsorption on soil over the entire concentration ranges investigated could be described by the Langmuir adsorption isotherm and the Freundlich adsorption isotherm, respectively. The Henry adsorption isotherm was also applicable over the lower concentration ranges of arsenic (III) and boron (As (III): < 0.1 deltag/ml; B: < 5deltag/ml.) (3) Arsenic (III) and boron adsorption on soil is controlled mainly by the contents of extractable Fe oxide and hydroxide for arsenic (III) and by the contents of extractable Al hydroxide and allophane (amorphous aluminium silicates) for boron. (4) Adsorption and movement of arsenic (III) and boron during the infiltration of coal ash leachate in soil layer were investigated by means of the unsteady-state, one-dimensional convective-diffusive mass transport model. This model is very useful for evaluation and prediction of the contamination of ground water by trace elements such as arsenic (III) and boron leached at coal ash disposal site.

  18. Design, Fabrication and Performance of Boron-Carbide Control Elements

    International Nuclear Information System (INIS)

    A control blade design, incorporating boron-carbide (B4C) in stainless-steel tubes, was introduced into service in boiling water reactors in April 1961. Since that time this blade has become the standard reference control element in General Electric boiling-water reactors, replacing the 2% boron-stainless-steel blades previously used. The blades consist of a sheathed, cruciform array of small vertical stainless-steel tubes filled with compácted boron-carbide powder. The boron-carbide powder is confined longitudinally into several independent compartments by swaging over ball bearings located inside the tubes. The development and use of boron-carbide control rods is discussed in five phases: 1. Summary of experience with boron-steel blades and reasons for transition to boron-carbide control; 2. Design of the boron-carbide blade, beginning with developmental experiments, including early measurements performed in the AEC ''Control Rod Material and Development Program'' at the Vallecitos Atomic Laboratory, through a description of the final control blade configuration; 3. Fabrication of the blades and quality control procedures; 4. Results of confirmatory pre-operational mechanical and reactivity testing; and 5. Post-operational experience with the blades, including information on the results of mechanical inspection and reactivity testing after two years of reactor service. (author)

  19. The investigation of parameters affecting boron removal by electrocoagulation method

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Department of Environmental Engineering, Atatuerk University, Faculty of Engineering, Erzurum (Turkey); Kocakerim, M. Muhtar [Department of Chemical Engineering, 25240, Atatuerk University, Faculty of Engineering Erzurum (Turkey); Keskinler, Buelent [Department of Environmental Engineering, Gebze Institute of Technology, Gebze/Kocaeli 41400 (Turkey)

    2005-10-17

    Boron removal from wastewaters by electrocoagulation using aluminum electrode material was investigated in this paper. Several working parameters, such as pH, current density, boron concentration and type and concentration of supporting electrolyte were studied in an attempt to achieve a higher removal capacity. The experiments were carried out by keeping the pH of solution constant and optimum pH of solution was determined 8.0 for the aluminum electrode. Although energy consumption increased with decreasing boron concentration, which conductivity of these solutions were low, boron removal efficiency was higher at 100 mg/L than that of 1000 mg/L. Current density was an important parameter affecting removal efficiency. Boron removal efficiency and energy consumption increased with increasing current density from 1.2 to 6.0 mA/cm{sup 2}. The types of different supporting electrolyte were experimented in order to investigate to this parameter effect on boron removal. The highest boron removal efficiency, 97%, was found by CaCl{sub 2}. Added CaCl{sub 2} increased more the conductivity of solution according to other supporting electrolytes, but decreased energy consumption. The results showed to have a high effectiveness of the electrocoagulation method in removing boron from aqueous solutions.

  20. Finite Element Analysis Of Boron Diffusion In Wood

    DEFF Research Database (Denmark)

    Krabbenhøft, Kristian; Hoffmeyer, Preben; Bechgaard, Carl; Damkilde, Lars

    The coupled heat and mass transfer equations for air, water and heat transfer are supplemented with a conservation equation for an additional species representing the concentration of boron in wood. Boundary conditions for wood-air. wood-soil and wood-boron interfaces arc discussed and finally th...

  1. Brazed boron-silicon carbide/aluminum structural panels

    Science.gov (United States)

    Arnold, W. E., Jr.; Bales, T. T.; Brooks, T. G.; Lawson, A. G.; Mitchell, P. D.; Royster, D. M.; Wiant, R.

    1978-01-01

    Fluxless brazing process minimizes degradation of mechanical properties composite material of silicon carbide coated boron fibers in an aluminum matrix. Process is being used to fabricate full-scale Boron-Silicon Carbide/Aluminum-Titanium honeycomb core panels for flight testing and ground testing.

  2. Highly thermal conductive carbon fiber/boron carbide composite material

    International Nuclear Information System (INIS)

    In a composite member for use in walls of a thermonuclear reactor, if carbon fibers and boron carbide are mixed, since they are brought into contact with each other directly, boron is reacted with the carbon fibers to form boron carbide to lower thermal conductivity of the carbon fibers. Then, in the present invention, graphite or amorphous carbon is filled between the carbon fibers to provide a fiber bundle of not less than 500 carbon fibers. Further, the surface of the fiber bundle is coated with graphite or amorphous carbon to suppress diffusion or solid solubilization of boron to carbon fibers or reaction of them. Then, lowering of thermal conductivity of the carbon fibers is prevented, as well as the mixing amount of the carbon fiber bundles with boron carbide, a sintering temperature and orientation of carbon fiber bundles are optimized to provide a highly thermal conductive carbon fiber/boron carbide composite material. In addition, carbide or boride type short fibers, spherical graphite, and amorphous carbon are mixed in the boron carbide to prevent development of cracks. Diffusion or solid solubilization of boron to carbon fibers is reduced or reaction of them if the carbon fibers are bundled. (N.H.)

  3. Does boron affect hormone levels of barley cultivars?

    Directory of Open Access Journals (Sweden)

    Muavviz Ayvaz

    2012-11-01

    Full Text Available Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare cultivars (Vamik Hoca and Efes 98 were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm to plants that had grown from seeds for four weeks. Plants were harvested, stem-root length and stem-root dry-fresh weight content were determined. For further analysis, chlorophyll, total protein, endogenic IAA and ABA content analyses were carried out. Results: According to the data obtained, plant growth and development decreased with increasing boron concentrations. With increasing boron concentrations, soluble total protein increased in both cultivars. Boron application led to increased endogenic IAA content in both cultivars. 10 and 20 ppm boron application led to increased endogenic ABA content in Vamik Hoca cultivar whereas endogenic ABA content decreased in Efes 98. Absence of boron application led to increased endogenic IAA and ABA content in both cultivars. Conclusion: As a result, the response to boron is different in the two cultivars and Efes 98 may be more resistant to the toxicity than Vamik Hoca cultivar.

  4. Composition and microhardness of CAE boron nitride films

    International Nuclear Information System (INIS)

    The paper deals with boron nitride produced by cathodic arc evaporation techniques.The films were applied on titanium and cemented carbide substrates. Their characterization was carried out using X-ray diffraction and Knoop microhardness tests. Demonstrated are the high properties of two-phase films, containing β (cubic) and γ (wurtzitic) modifications of boron nitride. (author). 7 refs., 1 fig., 3 tabs

  5. Boron compounds as potential HIV-1 protease inhibitors

    Czech Academy of Sciences Publication Activity Database

    Plešek, Jaromír; Grüner, Bohumír; Král, V.; Cígler, Petr; Kožíšek, Milan; Prejdová, Jana; Pokorná, Jana; Kräusslich, H. G.; Bodem, J.; Konvalinka, Jan

    Tohoku: Graduate School of Science, 2005, s. 46. [International Conference on Boron Chemistry /12./. Sendai (JP), 11.09.2005-15.09.2005] R&D Projects: GA MŠk(CZ) LC523 Institutional research plan: CEZ:AV0Z40320502 Keywords : boron cluster compounds Subject RIV: CA - Inorganic Chemistry

  6. Eleventh international conference on boron chemistry. Programme and abstracts

    International Nuclear Information System (INIS)

    Abstracts of reports at the Eleventh International Conference on Boron Chemistry are presented. Born chemistry as a connecting bridge between many fields maintains one of the leading positions in modern chemistry. Methods of synthesis of different boron compounds, properties of the compounds, their use in other regions of chemistry and medicine are widely presented in reports

  7. Boron Speciation in Soda-Lime Borosilicate Glasses Containing Zirconium

    International Nuclear Information System (INIS)

    Boron speciation was investigated in soda-lime borosilicate glass containing zirconium. In such compositions, competition between charge compensators (here, sodium and calcium) can occur for the compensation of tetrahedral boron or octahedral zirconium units. 11B MAS NMR is particularly suitable for obtaining data on preferential compensation behavior that directly affects the boron coordination number. In addition to the classical proportions of tri- and tetrahedral boron, additional data can be obtained on the contributions involved in these two coordination numbers. An approach is described here based on simultaneous MAS spectrum analysis of borosilicate glass with variable Zr/Si and Ca/Na ratios at two magnetic field strengths (11. 7 and 18. 8 T), with constraints arising from MQMAS spectroscopy, detailed analysis of satellite transitions, and spin-echo experiments. New possibilities of 11B NMR were presented for improving the identification and quantification of the different contributions involved in tri- and tetrahedral boron coordination. Both NMR and Raman revealed a trend of decreased tetrahedral boron proportion with the increase of Ca/Na ratio or the Zr/Si ratio. This strongly suggests that zirconium compensation takes preference over boron compensation, and that zirconium and boron are both compensated mainly by sodium rather than calcium. (authors)

  8. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  9. Safety assessment of boron in aquatic and terrestrial environments.

    Science.gov (United States)

    Butterwick, L; de Oude, N; Raymond, K

    1989-06-01

    Boron is a naturally occurring material and is used in industrial and domestic products. Its major release into the environment is through weathering processes and wastewater discharge. Boron is an essential nutrient for plants, but can above certain concentrations be toxic to aquatic and terrestrial organisms. This paper assesses the ecotoxicology and environmental safety of boron. It draws together the data for toxicological effects of boron and compares these with environmental concentrations of boron, measured in Europe and the U.S.A. Generally, environmental concentrations of boron found in surface water are below levels identified as toxic to aquatic organisms. Concentrations high enough to produce toxic effects in laboratory tests are found in areas where weathering of boron-rich formations and deposits occurs, such as in the southwestern United States. However, reproducing populations of the most sensitive species, rainbow trout, have been observed in surface waters in these regions, indicating no cause for concern. The prime concern for effects on terrestrial plants centers on the use of irrigation water with elevated levels of boron. At present, there is no evidence of widespread damage to crops resulting from this practice. In some areas, wastewater is used for irrigation and crops grown under these conditions are generally confined to those relatively insensitive to boron toxicity. Good irrigation practices will be necessary, however, in arid regions with high evapotranspiration rates and care will be needed when using wastewater, particularly in areas with naturally high boron levels. It is not anticipated that there will be any significant increase in the discharge of boron to the environment in the foreseeable future. The use of boron-containing products is expected to increase, but glass will remain the dominant market and the use of boron in detergents in Europe is expected to decrease due to the introduction of bleach activators and liquid

  10. Depletion modeling of integral burnable absorbers containing enriched boron

    International Nuclear Information System (INIS)

    Depletion modeling of fuel assembly with different integral fuel burnable absorber loadings containing enriched boron has been performed by WIMSD transport code. Equivalent boron concentration that represents depletion of the integral fuel burnable absorbers containing enriched boron has been calculated using modified PSU/LEOPARD code. The calculated equivalent boron concentrations have been introduced into FUMACS computer code package master files, upgrading the code package with new global calculation feature for core modeling with different integral fuel burnable absorber loadings containing enriched boron. This new feature of FUMACS/FEEC2001 code package has been verified and validated on 12-month and 18-month operating cycle core loading patterns of NPP Krsko.(author)

  11. The sorption capacity of boron on anionic-exchange resin

    International Nuclear Information System (INIS)

    Boron sorption capacities on anionic-exchange resins vary with temperature, concentration, and resin cross-linkage. A semiempirical correlation, developed from boron solution chemistry, is presented to account for these variations. The relationship, based on boron chemistry and changes in Gibb's energy, can be stated approximately as Q = a1CBa2Za3 exp[-(a4T + a5T2 + a6Z0.5)]. Correlation parameters, which vary with resin type, are evaluated experimentally. Parameter values for macroporous resin Diaion PA 300 and for gel-type resins Diaion SA10 and Amberlite IRN 78LC are presented. The resulting expression is used to determine boron sorption and desorption limitations on ion exchangers at various temperatures and concentrations, and to determine the interfacial boron concentration in equilibrium and rate models

  12. Investigation of boron segregation in low carbon steel

    Directory of Open Access Journals (Sweden)

    J. Lis

    2011-04-01

    Full Text Available Traces of born in the range 0,002-0,009 % are usually added to many grades of steel. The effect of boron on phase transformations and hardenability of low carbon low alloy steels depends on the form of its behavior in solid solution either in segregations or in precipitations. Temperature and cooling rate determine the existence of boron segregations on grain boundaries. In present paper simulations of boron concentrations were calculated with computer programme DICTRA for low carbon 0,08 %C steel with 0,006 % boron. Investigations were carried out for temperature 1300 – 700°C and cooling rates from 1°C/s to 100°C/s. The changes of boron concentrations in austenite and ferrite after commencement of γ→α phase transformation were established.

  13. Boronization during the first plasma operation on EAST

    International Nuclear Information System (INIS)

    Both ion cyclotron rf and glow discharge boronization have been successfully used for wall conditioning on EAST tokamak device. The whole process is monitored continuously by residual gas analyzer and film thickness monitor. These diagnostics provide detailed information about the boronization. High hydrogen inventory level observed after boronization maybe due to the boronization material used (C2B10H12). Ion cyclontron rf conditioning is proved to be an efficient wall conditioning method for superconducting device because it could be carried out under toroidal magnetic field. In this paper, the procedure of boronization is described, and subsequently sample analysis and the effect on plasma operation are introduced. Conclusion is given at the end

  14. Steam oxidation of boron carbide–stainless steel liquid mixtures

    International Nuclear Information System (INIS)

    In the framework of nuclear reactor core meltdown accidents studies, the oxidation kinetics of boron carbide–stainless steel liquid mixtures exposed to argon/steam atmospheres was investigated at temperatures up to 1527 °C. A B–Cr–Si–O liquid protective layer forms on the surface of the mixtures in contact with steam. This protective layer gradually transforms into a Cr2O3-rich slag. Important quantities of liquid can be projected from the melt during oxidation. These projections are favoured by high B4C contents in the melt, high steam partial pressures and low temperatures. In addition to stainless steel–boron carbide melts, simpler compositions (pure 304L stainless steel, iron–boron, iron–boron carbide and stainless steel–boron) were studied, in order to identify the basic oxidation mechanisms.

  15. Synthesis and photoluminescence property of boron carbide nanowires

    International Nuclear Information System (INIS)

    Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B2O3/C powder precursors under an argon flow at 1100°C. The boron carbide nanowires are 5–10 μm in length and 80–100 nm in diameter. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm. (condensed matter: structure, thermal and mechanical properties)

  16. Enhanced surface hardness by boron implantation in Nitinol alloy.

    Science.gov (United States)

    Lee, D H; Park, B; Saxena, A; Serene, T P

    1996-10-01

    Boron implantation into Nitinol alloy has a potential for developing improved Nitinol root canal instruments with excellent cutting properties, without affecting their superelastic bulk-mechanical properties. The surface hardness of nickel-titanium (NiTi) alloy, also known as "Nitinol" (50 atm% nickel+50 atm% titanium), has been improved by ion-beam surface modification. With an implantation dose of 4.8 x 10(17) boron/cm2, a high concentration of boron (30 atm%) is incorporated into NiTi alloy by 110 keV boron ions at room temperature (25 degrees C). Boron-implanted and unimplanted (pure) Nitinol alloys show surface hardness of 7.6 +/- 0.2 and 3.2 +/- 0.2 GPa, respectively, at the nanoindentation depth of 0.05 micron. The ion-beam-modified NiTi alloy exceeds the surface hardness of stainless steel. PMID:9198443

  17. Advancements in Tumor Targeting Strategies for Boron Neutron Capture Therapy.

    Science.gov (United States)

    Luderer, Micah John; de la Puente, Pilar; Azab, Abdel Kareem

    2015-09-01

    Boron neutron capture therapy (BNCT) is a promising cancer therapy modality that utilizes the nuclear capture reaction of epithermal neutrons by boron-10 resulting in a localized nuclear fission reaction and subsequent cell death. Since cellular destruction is limited to approximately the diameter of a single cell, primarily only cells in the neutron field with significant boron accumulation will be damaged. However, the emergence of BNCT as a prominent therapy has in large part been hindered by a paucity of tumor selective boron containing agents. While L-boronophenylalanine and sodium borocaptate are the most commonly investigated clinical agents, new agents are desperately needed due to their suboptimal tumor selectivity. This review will highlight the various strategies to improve tumor boron delivery including: nucleoside and carbohydrate analogs, unnatural amino acids, porphyrins, antibody-dendrimer conjugates, cationic polymers, cell-membrane penetrating peptides, liposomes and nanoparticles. PMID:26033767

  18. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    JinxiaMa; YuxiuPeng; ZhongzhengLi

    2004-01-01

    In this paper it was studied that these dosage effectsof CPAM, cationic starch,boron modified silica sol(BMS), A12(SO4)3, pH value and electrolyte on theretention and drainage of different microparticulatesystems including CPAM, cationic starch and boronsilica sol. The research results indicated that CPAMhad no good retention when used with boron silicasol. The best retention efficiency was the micropar-ticulate system of CPAM + cationic starch withboron modified silica sol; Secondly was that ofcationic starch with boron modified silica sol; Theworst was that of CPAM with boron modified silicasol. The retention efficiency had no relation with theaddition order between CPAM and cationic starch. Itwas also found that the microparticulate retentionsystem of boron modified silica sol could be used inalum-rosin sizing and in acidity, neutral or alkalinepapermaking conditions. This system also could beused with close circulate water so that it could reducethe water pollution and waste.

  19. Optical characteristic analysis of the boronization process by using carborane

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wonwook; Park, Kyungdeuk; Choi, Youngsun; Oh, Chahwan [Hanyang University, Seoul (Korea, Republic of)

    2014-09-15

    Boronization with carborane (C{sub 2}B{sub 10}H{sub 12}) was achieved in a vacuum vessel coupled to a filament discharge system. Optical emission spectroscopy was employed to characterize the boronization process. The Balmer lines of hydrogen and deuterium were measured, and the boronization process was analyzed by using the intensity ratio of the H{sub α} to the D{sub α} line (I{sub H}/I{sub D}). The relation between the pressure and the intensity ratio was investigated, and the thickness of the deposited boron film was predicted. Also, the dilution ratio H/(H + D) of the boron film was analyzed and compared with the one predicted from an optical analysis of the emission spectrum.

  20. Ion implantation of boron in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K.S.

    1985-05-01

    Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.

  1. Boron-nitride coated nuclear fuels

    Energy Technology Data Exchange (ETDEWEB)

    Guenduez, G. [Orta Dogu Teknik Univ., Ankara (Turkey); Uslu, I. [Tuerkiye Atom Enerjisi Kurumu, Ankara (Turkey); Durmazucar, H.H. [Cumhuriyet Univ., Sivas (Turkey)

    1996-10-01

    Pure urania- and urania-gadolinia-containing fuel pellets were coated with boron nitride (BN) to improve the physical and neutronic properties of the fuel. The BN coating seems to have a technological advantage over zirconium-diboride coating. The BN is chemically inert, corrosion resistant, withstands rapid temperature changes, and has a high thermal conductivity. Since gadolinia fuel has low thermal conductivity. Since gadolinia fuel has low thermal conductivity, the gadolinia content can be lowered in the fuel by coating it with BN. In fact, the existence of two burnable absorbers in a fuel introduces desired nuclear properties since gadolinia is a fast-burning and boron a slow-burning element. The BN was deposited on fuel from two different sources, (a) from the reaction of boron trichloride (BCl{sub 3}) and ammonia (NH{sub 3}) at 875 K and (b) from the decomposition of trimethylamine borate complex at 1200 K. The infrared and X-ray diffraction (XRD) spectra of BN from both precursors agreed with the available data in the literature. However BN powder from borane complex had a shifted XRD peak due to the presence of carbonaceous material in the structure. The BN powder-coated fuels were heated to 1400, 1525, and 1600 K to sinter the BN. The examination under scanning electron microscope showed that grainy, rod-shaped and layered BN coatings were achieved. Rod-shaped structures were usually seen on gadolinia fuels. The increased thickness of coating favors the formation of a glassy looking layer. The BN from a borane complex seems to form a layered structure more easily than the BN from BCl{sub 3}. The BN coated the surface of the fuels, and it did not penetrate into the fuels.

  2. Boron-nitride coated nuclear fuels

    International Nuclear Information System (INIS)

    Pure urania- and urania-gadolinia-containing fuel pellets were coated with boron nitride (BN) to improve the physical and neutronic properties of the fuel. The BN coating seems to have a technological advantage over zirconium-diboride coating. The BN is chemically inert, corrosion resistant, withstands rapid temperature changes, and has a high thermal conductivity. Since gadolinia fuel has low thermal conductivity. Since gadolinia fuel has low thermal conductivity, the gadolinia content can be lowered in the fuel by coating it with BN. In fact, the existence of two burnable absorbers in a fuel introduces desired nuclear properties since gadolinia is a fast-burning and boron a slow-burning element. The BN was deposited on fuel from two different sources, (a) from the reaction of boron trichloride (BCl3) and ammonia (NH3) at 875 K and (b) from the decomposition of trimethylamine borate complex at 1200 K. The infrared and X-ray diffraction (XRD) spectra of BN from both precursors agreed with the available data in the literature. However BN powder from borane complex had a shifted XRD peak due to the presence of carbonaceous material in the structure. The BN powder-coated fuels were heated to 1400, 1525, and 1600 K to sinter the BN. The examination under scanning electron microscope showed that grainy, rod-shaped and layered BN coatings were achieved. Rod-shaped structures were usually seen on gadolinia fuels. The increased thickness of coating favors the formation of a glassy looking layer. The BN from a borane complex seems to form a layered structure more easily than the BN from BCl3. The BN coated the surface of the fuels, and it did not penetrate into the fuels

  3. Ballistic thermoelectric properties in boron nitride nanoribbons

    Science.gov (United States)

    Xie, Zhong-Xiang; Tang, Li-Ming; Pan, Chang-Ning; Chen, Qiao; Chen, Ke-Qiu

    2013-10-01

    Ballistic thermoelectric properties (TPs) in boron nitride nanoribbons (BNNRs) are studied using the nonequilibrium Green's function atomistic simulation of electron and phonon transport. A comparative analysis for TPs between BNNRs and graphene nanoribbons (GNRs) is made. Results show that the TPs of BNNRs are better than those of GNRs stemming from the higher power factor and smaller thermal conductance of BNNRs. With increasing the ribbon width, the maximum value of ZT (ZTmax) of BNNRs exhibits a transformation from the monotonic decrease to nonlinear increase. We also show that the lattice defect can enhance the ZTmax of these nanoribbons strongly depending on its positions and the edge shape.

  4. Magnesium doping of boron nitride nanotubes

    Science.gov (United States)

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  5. Boron nitride nanomaterials for thermal management applications.

    Science.gov (United States)

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed. PMID:25652360

  6. Boron Pile v-bar Measurements

    International Nuclear Information System (INIS)

    Accurate absolute measurements of v, the average number of neutrons per fission, have been made with the boron pile. The experimental method is described and results are presented of the v values obtained for the thermal-neutron-induced fission of U233, U235, Pu239 and Pu241, the spontaneous fission of Pu240 and Cf252, and the fast neutron-induced fission of U235 in the energy range 100 keV to 2.6 MeV. (author)

  7. Low-dimensional boron nitride nanomaterials

    Directory of Open Access Journals (Sweden)

    Amir Pakdel

    2012-06-01

    Full Text Available In this review, a concise research history of low-dimensional boron nitride (BN nanomaterials followed by recent developments in their synthesis, morphology, properties, and applications are presented. Seventeen years after the initial synthesis of BN nanotubes, research on BN nanomaterials has developed far enough to establish them as one of the most promising inorganic nanosystems. In this regard, it is envisaged that the unique properties of low-dimensional BN systems, such as superb mechanical stiffness, high thermal conductivity, wide optical bandgap, strong ultraviolet emission, thermal stability and chemical inertness will play a key role in prospective developments.

  8. Boron-containing neutron shielding building ceramics

    International Nuclear Information System (INIS)

    The data are presented on the composition of raw materials as well as on the properties and chemical composition of finished products of ceramics intended for neutron shielding. It is shown that 0.8 % content of B2O3 in bricks of ceramic mass proposed halves neutron radiation from the source of 106 neutr·s-1 close rate compared to bricks of boron free ceramic mass. Results of tests on water absorption and compression strength make it possible to recommend new ceramics to be used as tiles and facade building materials

  9. Salinity’s influence on boron toxicity in broccoli: II. Impacts on boron uptake, uptake mechanisms and tissue ion relations.

    Science.gov (United States)

    Limited research has been conducted on the interactive effects of salinity and boron stresses on plants despite their common occurrence in natural systems. The purpose of this research was to determine and quantify the interactive effects of salinity, salt composition and boron on broccoli (Brassica...

  10. Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

    International Nuclear Information System (INIS)

    Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

  11. Boron carbide particles formed from an amorphous boron/graphite powder mixture using a shock-wave technique

    International Nuclear Information System (INIS)

    Boron carbide (B4C) particles with filamental, distorted ellipsoidal, platelike, and polyhedral shapes were formed from vapor generated from an amorphous boron/graphite powder mixture with 14% starting density using a cylindrical shock-wave technique. The crystal phases of shocked compact and microstructures of the B4C particles were characterized by X-ray diffractometry and electron microscopy, respectively

  12. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  13. Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

    NARCIS (Netherlands)

    Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

    2012-01-01

    The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

  14. Boron nitride - boron hybrid coating on uranium dioxide-gadolinium oxide fuel. Final report for the period 1 November 1996 - 1 November 1997

    International Nuclear Information System (INIS)

    The report describes work to develop laboratory-scale technology of the deposition of hybrid boron nitrate-metallic boron coating onto the surface of uranium dioxide ore uranium dioxide - gadolinia dioxide fuel pellets. Methods of chemical vapour deposition and plasma enhanced chemical vapour deposition were used in the Department of Chemical Engineering of the Middle East Technical University, Ankara, Turkey. An excellent adherence of boron onto the boron nitrate layer and boron nitrate layer onto the fuel pellet surface was demonstrated. Fine grain-type structure of boron coating and its excellent adherence are good indices for integrated fuel burnable absorber fuels

  15. Ternary arsenides based on platinum–indium and palladium–indium fragments of the Cu{sub 3}Au-type: Crystal structures and chemical bonding

    Energy Technology Data Exchange (ETDEWEB)

    Zakharova, Elena Yu.; Andreeva, Natalia A.; Kazakov, Sergey M. [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); Kuznetsov, Alexey N., E-mail: alexei@inorg.chem.msu.ru [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); N.S. Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, Leninskii pr. 31, 119991 Moscow (Russian Federation)

    2015-02-05

    Highlights: • Three metal-rich platinum–indium and palladium–indium arsenides were synthesized. • Their crystal structures were determined from powder XRD. • Electronic structures and bonding were studied using DFT/FP-LAPW calculations. • Multi-centered Pt–In or Pd–In bonding was revealed using ELF and ELI-D analysis. • Extra pairwise Pt–Pt interactions are observed only for Pt-based compounds. - Abstract: Three metal-rich palladium–indium and platinum–indium arsenides, Pd{sub 5}InAs, Pt{sub 5}InAs, and Pt{sub 8}In{sub 2}As, were synthesized using a high-temperature ampoule technique. Their crystal structures were determined from Rietveld analysis of powder diffraction data. All the compounds crystallize in tetragonal system with P4/mmm space group (Pd{sub 5}InAs: a = 3.9874(1) Å, c = 6.9848(2) Å, Z = 1, R{sub p} = 0.053; R{sub b} = 0.013; Pt{sub 5}InAs: a = 3.9981(2) Å, c = 7.0597(4) Å, Z = 1, R{sub p} = 0.058, R{sub b} = 0.016; Pt{sub 8}In{sub 2}As: a = 3.9872(3) Å, c = 11.1129(7) Å, Z = 1, R{sub p} = 0.047; R{sub b} = 0.014). The first two compounds belong to the Pd{sub 5}TlAs structure type, while the third one is isotypic with the recently discovered Pd{sub 8}In{sub 2}Se. Main structural units in all arsenides are indium-centered [TM{sub 12}In] cuboctahedra (TM = Pd, Pt) of the Cu{sub 3}Au type, single- and double-stacked along the c axis in TM{sub 5}InAs and Pt{sub 8}In{sub 2}As, respectively, alternating with [TM{sub 8}As] rectangular prisms. DFT electronic structure calculations predict all three compounds to be 3D metallic conductors and Pauli-like paramagnets. According to the bonding analysis based on the electron localization function and electron localizability indicator topologies, all compounds feature multi-centered interactions between transition metal and indium in their heterometallic fragments. Additionally, pairwise interactions between platinum atoms are also observed, indicating a somewhat more localized bonding

  16. Crystallography, semiconductivity, thermoelectricity, and other properties of boron and its compounds, especially B6O

    Science.gov (United States)

    Slack, G. A.; Morgan, K. E.

    2015-09-01

    Electron deficient and non-deficient boron compounds are discussed as potential thermoelectric generator materials. Particular attention is paid to carbon-doped beta-boron, high-carbon boron carbide, and the alpha-boron derivative compound boron suboxide. Stoichiometric B6O shows some promise, and may have a higher ZT than the other two compounds. Carbon saturated beta-boron appears to have a higher ZT than undoped samples. Carbon saturated boron carbide at B12C3 does exist. Its thermoelectric behavior is unknown.

  17. Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R Roy; Jordan, Kevin; Smith, Michael W

    2015-03-24

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  18. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    Energy Technology Data Exchange (ETDEWEB)

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  19. Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2015-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

  20. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    Science.gov (United States)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  1. Application of Cycloaddition Reactions to the Syntheses of Novel Boron Compounds

    Directory of Open Access Journals (Sweden)

    John A. Maguire

    2010-12-01

    Full Text Available This review covers the application of cycloaddition reactions in forming the boron-containing compounds such as symmetric star-shaped boron-enriched dendritic molecules, nano-structured boron materials and aromatic boronic esters. The resulting boron compounds are potentially important reagents for both materials science and medical applications such as in boron neutron capture therapy (BNCT in cancer treatment and as drug delivery agents and synthetic intermediates for carbon-carbon cross-coupling reactions. In addition, the use of boron cage compounds in a number of cycloaddition reactions to synthesize unique aromatic species will be reviewed briefly.

  2. Drug delivery system design and development for boron neutron capture therapy on cancer treatment

    International Nuclear Information System (INIS)

    We have already synthesized a boron-containing polymeric micellar drug delivery system for boron neutron capture therapy (BNCT). The synthesized diblock copolymer, boron-terminated copolymers (Bpin-PLA-PEOz), consisted of biodegradable poly(D,L-lactide) (PLA) block and water-soluble polyelectrolyte poly(2-ethyl-2-oxazoline) (PEOz) block, and a cap of pinacol boronate ester (Bpin). In this study, we have demonstrated that synthesized Bpin-PLA-PEOz micelle has great potential to be boron drug delivery system with preliminary evaluation of biocompatibility and boron content. - Highlights: • Herein, we have synthesized boron-modified diblock copolymer. • Bpin-PLA-PEOz, which will be served as new boron containing vehicle for transporting the boron drug. • This boron containing Bpin-PLA-PEOz micelle was low toxicity can be applied to drug delivery

  3. Microdosimetry for Boron Neutron Capture Therapy

    International Nuclear Information System (INIS)

    The specific aims of the research proposal were as follows: (1) To design and construct small volume tissue equivalent proportional counters for the dosimetry and microdosimetry of high intensity thermal and epithermal neutron beams used in BNCT, and of modified fast neutron beams designed for boron neutron capture enhanced fast neutron therapy (BNCEFNT). (2) To develop analytical methods for estimating the biological effectiveness of the absorbed dose in BNCT and BNCEFNT based on the measured microdosimetric spectra. (3) To develop an analytical framework for comparing the biological effectiveness of different epithermal neutron beams used in BNCT and BNCEFNT, based on correlated sets of measured microdosimetric spectra and radiobiological data. Specific aims (1) and (2) were achieved in their entirety and are comprehensively documented in Jay Burmeister's Ph.D. dissertation entitled ''Specification of physical and biologically effective absorbed dose in radiation therapies utilizing the boron neutron capture reaction'' (Wayne State University, 1999). Specific aim (3) proved difficult to accomplish because of a lack of sufficient radiobiological data

  4. Boron-10 ABUNCL Prototype Initial Testing

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Ely, James H.; Lintereur, Azaree T.; Siciliano, Edward R.

    2012-12-01

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results of initial testing of an Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) design built by General Electric Reuter-Stokes. Several configurations of the ABUNCL models, which use 10B-lined proportional counters in place of 3He proportional counters for the neutron detection elements, were previously reported. The ABUNCL tested is of a different design than previously modeled. Initial experimental testing of the as-delivered passive ABUNCL was performed, and modeling will be conducted. Testing of the system reconfigured for active testing will be performed in the near future, followed by testing with nuclear fuel.

  5. Boron Removal from Silicon by Humidified Gases

    Science.gov (United States)

    Safarian, Jafar; Tang, Kai; Hildal, Kjetil; Tranell, Gabriella

    2014-01-01

    Boron (B) is one of the most problematic impurities to remove from metallurgical grade silicon in the production of more pure solar grade silicon (SoG-Si). In the present work, recent progresses in the application of reactive gases for B removal from molten silicon is reviewed. Moreover, in order to clarify the mechanisms and kinetics of gas-based B-refining, an experimental procedure using humidified Ar, N2, and H2 gases applied to boron-doped silicon melt is described. It is shown that the kinetics and extent of B removal is depending on the type of humidified gas. The thermodynamics and kinetics of B removal from molten silicon are studied to explain experimental observations. The mass transfer coefficients of B are calculated and possible mechanisms for B removal by the reactive gases are proposed: 1/2{{H}}2 ({{g}}) &= \\underset{-{H} ,} \\underset{-}{B} + \\underset{H} + {H}2 {O(g)} &= {HBO(g)} + {H}2 . It is shown that the lower equilibrium partial pressure of HBO gas at higher temperatures causes slower B removal rate.

  6. Analysis of boron carbides' electronic structure

    Science.gov (United States)

    Howard, Iris A.; Beckel, Charles L.

    1986-01-01

    The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

  7. Determination of boron spectrophotometry in thorium sulfate

    International Nuclear Information System (INIS)

    A procedure for the determination of microquantities of boron in nuclear grade thorium sulfate is described. The method is based on the extraction of BF-4 ion associated to monomethylthionine (MMT) in 1,2 - dichloroethane. The extraction of the colored BF-4-MMT complex does not allow the presence of sulfuric and phosphoric acids; other anions interfere seriously. This fact makes the dissolution of the thorium sulfate impracticable, since it is insoluble in both acids. On the other hand, the quantitative separation of thorium is mandatory, to avoid the precipitation of ThF4. To overcome this difficulty, the thorium sulfate is dissolved using a strong cationic ion exchanger, Th4+ being totally retained into the resin. Boron is then analysed in the effluent. The procedure allows the determination of 0.2 to 10.0 microgramas of B, with a maximum error of 10%. Thorium sulfate samples with contents of 0.2 to 2.0μg B/gTh have being analysed

  8. Thermal properties of boron and borides

    International Nuclear Information System (INIS)

    The influence of point defects on the thermal conductivity of polycrystalline β-B has been measured from 1 to 1000 K. Above 300 K, samples containing 2 at. % Hf and Zr have thermal conductivities close to that of amorphous boron, indicating very strong phonon scattering. A thermal conductivity of equal magnitude has also been measured near and below room temperature for nearly stoichiometric single crystals of the theoretical composition YB68. On the basis of a comparison with earlier measurements to temperatures as low as 0.1 K, it is concluded that the thermal conductivity of crystalline YB68 is indeed very similar, if not identical, to that expected for amorphous boron over the entire temperature range of measurement (0.1--300 K). Measurements of the specific heat of nearly stoichiometric YB68 between 1.5 and 30 K also reveal a linear-specific-heat anomaly of the same magnitude as is characteristic for amorphous solids, in fair agreement with earlier measurements by Bilir et al. It is concluded that the lattice vibrations of crystalline YB68 are glasslike

  9. Axial channeling of boron ions into silicon

    Science.gov (United States)

    La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carbera, A.; Gasparotto, A.

    1992-04-01

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5 × 10 11 and 1 × 10 15 atoms/cm 2. The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, Sc, was extracted from the experimental maximum ranges for the [100] and [110] axis. The energ dependence of the electronic stopping power is given by Sc = KEp with p[100] = 0.469±0.010 and p[110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles.

  10. Axial channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x1011 and 1x1015 atoms/cm2. The axial channeling concentration profiles of implanted B+ were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, Sc, was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by Se = KEp with p[100] = 0.469±0.010 and p[110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

  11. Axial channeling of boron ions into silicon

    Energy Technology Data Exchange (ETDEWEB)

    La Ferla, A.; Galvagno, G. (Ist. di Tecnologie e Metodologie per la Microelettronica, CNR, Dipt. di Fisica, Catania (Italy)); Raineri, V.; Setola, R.; Rimini, E. (Dipt. di Fisica, Univ. di Catania (Italy)); Carnera, A.; Gasparotto, A. (Dipt. di Fisica, Univ. di Padova (Italy))

    1992-04-01

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10{sup 11} and 1x10{sup 15} atoms/cm{sup 2}. The axial channeling concentration profiles of implanted B{sup +} were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S{sub c}, was extracted from the experimental maximum ranges for the (100) and (110) axis. The energy dependence of the electronic stopping power is given by S{sub e} = KE{sup p} with p{sub (100)} = 0.469{+-}0.010 and p{sub (110)} = 0.554{+-}0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.).

  12. Durability of tannin-boron-treated timber

    Directory of Open Access Journals (Sweden)

    Gianluca Tondi

    2012-11-01

    Full Text Available Tannin-boron wood preservatives were investigated for their resistance against outdoor agents. This work focused on the analysis of the causes that affect the durability of the tannin-hexamine-treated samples. In particular, dimensional stability, resistance to leaching, and resistance to biological agents were investigated. The combined effect of deterioration agents was evaluated by subjecting the treated samples to simulated and natural weathering tests. The study of the appearance and of the color components (L*, a*, and b* according to CIELAB space of the exposed samples was monitored to assess the efficacy of the tannin-boron formulations for outdoor applications. Significant resistance against the action of water (EN 84, ENV 1250-2 and insects (EN 47 has been demonstrated in specific tests. Conversely, the continuous stress due to artificial and natural weathering deteriorates the color and the visible features of the treated specimens. The combined effect of moisture modifications, solar exposition, and leaching cycles damages the structure of the tannin-based polymeric network and subsequently it negatively affects its preservation properties.

  13. Physical properties of CVD boron-doped multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Kartick C. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); Strydom, Andre M. [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park 2006 (South Africa)], E-mail: amstrydom@uj.ac.za; Erasmus, Rudolph M.; Keartland, Jonathan M. [DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa); School of Physics, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); Coville, Neil J. [Molecular Sciences Institute and School of Chemistry, University of the Witwatersrand, P.O. Wits, 2050 Johannesburg (South Africa); DST/NRF Centre of Excellence in Strong Materials, P.O. Wits, 2050 Johannesburg (South Africa)], E-mail: Neil.Coville@wits.ac.za

    2008-10-15

    The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.

  14. Grade A boron-stainless steel: your flexible friend

    International Nuclear Information System (INIS)

    Boron-containing stainless steels were first used for neutron flux control in reactors. Today they are also used as neutron absorbing materials for spent fuel storage pools and transportation casks. These boron-enriched stainless steels provide a higher thermal neutron absorption cross section than conventional Type 304. Up to 2.25% boron may be added, depending upon attenuation requirements. While adding boron increases neutron attenuation, it has an adverse effect on the alloy's ductility and impact resistance. In the past this has limited the use of borated stainless steels as a structural material for the storage and transportation of spent fuel. Growing needs in the industry, along with improvements in speciality steel processing, led to the development of an advanced type of boron stainless steel which combines neutron absorption capability with the ductility and impact resistance needed for structural applications. It is available with total boron contents up to 2.25% of natural boron, the enriched B-10 isotope, or a combination of these. (author)

  15. Nuclear characterizations and applications of boron-containing materials

    International Nuclear Information System (INIS)

    Materials either doped with traces of boron or containing this element as a matrix component have important technological and research applications. For most applications in technology, semiconductor doping, chemical vapor deposition of glass films, and optical waveguide fiber manufacture, boron levels or distribution must be controlled precisely. Thus, methods for quantitation of boron are needed, and its analytical chemistry still receives considerable study. Several nondestructive nuclear methods are described in this paper that have unique capabilities for quantitative analyses of boron at the trace and macro levels. Excellent high-sensitivity determinations are based on alpha track counting. For micro- and macroanalyses, the nuclear track technique using the 10B(n,α)7 Li reaction has been applied to map qualitatively the distribution of boron in borosilicate glass and in optical waveguide glass and fibers. Boron in the 1.59 to 7.75% range is determinable in silicate glasses. Similar information has also been obtained by prompt gamma neutron activation. Neuron depth profiling of boron in glass has been performed also. Results for several of these methods are reported

  16. Boron Particle Ignition in Secondary Chamber of Ducted Rocket

    Directory of Open Access Journals (Sweden)

    J. X. Hu

    2012-01-01

    Full Text Available In the secondary chamber of ducted rocket, there exists a relative speed between boron particles and air stream. Hence, the ignition laws under static conditions cannot be simply applied to represent the actual ignition process of boron particles, and it is required to study the effect of forced convective on the ignition of boron particles. Preheating of boron particles in gas generator makes it possible to utilize the velocity difference between gas and particles in secondary chamber for removal of the liquid oxide layer with the aid of Stoke's forces. An ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism. The shearing action exerted by the high-speed flow causes a boundary layer to be formed in the surface of the liquid oxide layer, and the stripping away of this layer accounts for the accelerated ignition of boron particles. Compared with the King model, as the ignition model of boron particles is formulated for the oxide layer removal by considering that it results from a boundary layer stripping mechanism, the oxide layer thickness thins at all times during the particle ignition and lower the ignition time.

  17. Boron carbide/carbon composite material and production process therefor

    International Nuclear Information System (INIS)

    The boron carbide/carbon composite material of the present invention comprises from 15 to 40% by volume of graphite and the balance of two kinds of powdery boron carbides X and Y having different average grain sizes. The average grain size of the powdery boron carbide X is less than 1/2 of the average grain size of the boron carbide Y, and the composite material comprises more than 10% by volume of the powdery boron carbide X and more than 30% by volume of the powdery boron carbide Y. They are press-molded under heating at a temperature range of 480 to 600degC, followed by sintering. A binder pitch of less evaporation ingredient melting upon heating is used as a binder. Since the pitch of satisfactory melting property is used, there is no worry that binding property lacks to reduce the lowering of the strength even if a great amount of powdery boron carbide is added. Further, since a carbonization yield is improved due to less evaporation content, density and strength of the composite material can be increased. (T.M.)

  18. Characterization of a boron carbide-based polymer neutron sensor

    Science.gov (United States)

    Tan, Chuting; James, Robinson; Dong, Bin; Driver, M. Sky; Kelber, Jeffry A.; Downing, Greg; Cao, Lei R.

    2015-12-01

    Boron is used widely in thin-film solid-state devices for neutron detection. The film thickness and boron concentration are important parameters that relate to a device's detection efficiency and capacitance. Neutron depth profiling was used to determine the film thicknesses and boron-concentration profiles of boron carbide-based polymers grown by plasma enhanced chemical vapor deposition (PECVD) of ortho-carborane (1,2-B10C2H12), resulting in a pure boron carbide film, or of meta-carborane (1,7-B10C2H12) and pyridine (C5H5N), resulting in a pyridine composite film, or of pyrimidine (C4H4N2) resulting in a pure pyrimidine film. The pure boron carbide film had a uniform surface appearance and a constant thickness of 250 nm, whereas the thickness of the composite film was 250-350 nm, measured at three different locations. In the meta-carborane and pyridine composite film the boron concentration was found to increase with depth, which correlated with X-ray photoelectron spectroscopy (XPS)-derived atomic ratios. A proton peak from 14N (n,p)14C reaction was observed in the pure pyrimidine film, indicating an additional neutron sensitivity to nonthermal neutrons from the N atoms in the pyrimidine.

  19. Computational Studies of Physical Properties of Boron Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  20. APPLICATION OF BORON MODIFIED SILICA SOL ON RETENTION AND DRAINAGE

    Institute of Scientific and Technical Information of China (English)

    Jinxia Ma; Yuxiu Peng; Zhongzheng Li

    2004-01-01

    In this paper it was studied that these dosage effects of CPAM, cationic starch、boron modified silica sol (BMS), Al2(SO4)3, pH value and electrolyte on the retention and drainage of different microparticulate systems including CPAM, cationic starch and boron silica sol. The research results indicated that CPAM had no good retention when used with boron silica sol. The best retention efficiency was the microparticulate system of CPAM + cationic starch with boron modified silica sol; Secondly was that of cationic starch with boron modified silica sol; The worst was that of CPAM with boron modified silica sol. The retention efficiency had no relation with the addition order between CPAM and cationic starch. It was also found that the microparticulate retention system of boron modified silica sol could be used in alum-rosin sizing and in acidity, neutral or alkaline papermaking conditions. This system also could be used with close circulate water so that it could reduce the water pollution and waste.

  1. Power Burst Facility/Boron Neutron Capture Therapy Program for cancer treatment

    Energy Technology Data Exchange (ETDEWEB)

    Ackermann, A.L. (ed.); Dorn, R.V. III.

    1990-08-01

    This report discusses monthly progress in the Power Boron Facility/Boron Neutron Capture Therapy (PBF/BNCT) Program for Cancer Treatment. Highlights of the PBF/BNCT Program during August 1990 include progress within the areas of: Gross Boron Analysis in Tissue, Blood, and Urine, boron microscopic (subcellular) analytical development, noninvasive boron quantitative determination, analytical radiation transport and interaction modeling for BNCT, large animal model studies, neutron source and facility preparation, administration and common support and PBF operations.

  2. MICROSTRUCTURE OF BORONIZED PM Cr-V COLD WORK LEDEBURITIC TOOL STEEL

    OpenAIRE

    Peter Jurči; Mária Hudáková

    2010-01-01

    The PM Vanadis 6 cold work tool steel has been boronized at various processing parameters, austenitized, quenched and tempered to a core hardness of 700 HV. Microstructure, phase constitution and microhardness of boronized layers were investigated. It was found that the boronized layers are of two-phase FeB/Fe2B constitution, with an addition of small portion of CrB. Below the boronized layer, intermediate region with elevated carbides ratio was developed. Boronized layers contain also carbid...

  3. Generation of a boron ion beam in a modified ion source for semiconductor applications

    International Nuclear Information System (INIS)

    Presented here are results of experimental studies on the production of intense beams of boron ions using a modified Bernas-Calutron ion source. Instead of using the conventional boron-trifluoride gas, a solid lithium-boron-tetrafluoride compound was heated to release boron-trifluoride. For optimum ion source parameters the measured 25-41 mA of total ion beam current was composed of 70% singly charged and about 1% doubly charged boron ions

  4. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  5. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    substrates. The crystal structure of the NWs has also been investigated, and a method for obtaining pure wurtzite NWs with a well controlled diameter and length is presented. For self-assisted growth of InAs NWs a method for enhanced control of the nanowire morphology by pre-treatment of the oxide layer...... is presented. A series of experiments with formation of a droplet on top of the wires has been carried out and pyramidal shaped structures at the NW top with pure zinc blende crystal structure are observed. A novel in-situ experiment with fabrication of NWs and simultanous characterization using x...

  6. Gallium arsenide pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R.; DaVia, C.; O`Shea, V.; Raine, C.; Smith, K. [Glasgow Univ. (United Kingdom). Dept. of Physics and Astronomy; Campbell, M.; Cantatore, E.; Heijne, E.M.; Middelkamp, P.; Ropotar, I.; Scharfetter, L.; Snoeys, W. [CERN, ECP Div., CH-1211 Geneva 23 (Switzerland); D`Auria, S.; Papa, C. del [Department of Physics, University of Udine and INFN Trieste, Via delle Scienze 208, I-33100 Udine (Italy); RD8 Collaboration

    1998-06-01

    GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV {pi}{sup -} beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e{sup -}. (orig.) 10 refs.

  7. Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

    International Nuclear Information System (INIS)

    This patent describes a method of fabricating metal-ceramic composites from previously formed ceramic precursor starting constituents selected from boron-carbide, boron and borides and metals reactive therewith selected from reactive metals, alloys thereof, and compounds thereof which reduce to reactive metals or alloys thereof. It comprises: chemically pretreating the previously formed starting constituents of a ceramic precursor; consolidating the chemically pretreated starting constituents into a porous ceramic precursor; infiltrating molten reactive metal into the chemically pretreated ceramic precursor; wherein the step of chemically pretreating the starting constituents of the ceramic precursor alters the surface chemistry to enhance infiltration of the precursor by the molten reactive metal by slowing the kinetics of reaction relative to the kinetics of densification

  8. Phase and property studies of boron carbide-boron nitride composites

    International Nuclear Information System (INIS)

    This paper reports on boron carbide-boron nitride particulate composites that were fabricated by vacuum hot-pressing. Near-theoretical densities of B4C were obtained, but percent theoretical densities decreased with increasing amounts of BN. The grain size of B4C and BN was not affected by composition, but the amount of twinning in B4C decreased with increasing BN content. No third phase was found at the B4C-BN interface by analytical STEM analysis. Lattice parameter measurements indicated slight solubility of B4C in BN, but no solubility of BN in B4C for samples hot-pressed at 2250 degrees C. Room-temperature flexural strength measurements revealed a sharply decreasing strength with increasing BN content up to 40% BN, and then relatively constant values with greater amounts of BN

  9. Nickel-boron nanolayer evolution on boron carbide particle surfaces during thermal treatment

    International Nuclear Information System (INIS)

    This study is focused on reduction of Ni2O3 and B2O3 in the Ni-B nanolayer on B4C particle surfaces and understanding of the nanolayer composition and morphology changes. Initially, the nanolayer contains Ni2O3, B2O3, and amorphous boron. After 400 oC thermal treatment in a H2-Ar atmosphere, Ni2O3 is reduced to nickel; the nanolayer morphology is maintained and the coated particles demonstrate magnetism. As the thermal treatment temperature is increased to 550 oC, B2O3 is reduced to boron, which reacts with nickel and forms Ni2B. Simultaneously, the nanolayer evolves into nanoparticles. Thermal treatment temperature increase to 700-900 oC only causes Ni2B particle growth but does not fundamentally change the composition or phase.

  10. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  11. Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

    International Nuclear Information System (INIS)

    The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B68Y, α-B12Al, B4C, and B6Si are described. Transition metals appear to be effective dopants for B68Y and B4C

  12. Development of TIMS for isotopic ratio analysis of boron

    International Nuclear Information System (INIS)

    A magnetic sector based Thermal Ionisation Mass Spectrometer (TIMS) has been developed at Technical Physics Division, for high precision isotope ratio analysis of Boron (in the form of Sodium Meta-borate) at the Boron enrichment facility, Heavy Water Plant, Manuguru. The performance of this indigenously developed TIMS has been tested for sensitivity, isotope ratio precision and accuracy for different levels of enrichment in the plant samples. The sensitivity of this instrument was found to be 1 ion per 200 atoms. The internal and external precision for natural concentration levels Boron isotopes were better than 0.05%. (author)

  13. Photoelectron spectroscopy of boron aluminum hydride cluster anions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haopeng; Zhang, Xinxing; Ko, Yeon Jae; Gantefoer, Gerd; Bowen, Kit H., E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Li, Xiang [Center for Space Science and Technology, University of Maryland–Baltimore County, Baltimore, Maryland 21250 (United States); Kiran, Boggavarapu, E-mail: kbowen@jhu.edu, E-mail: kiran@mcneese.edu [Department of Chemistry and Physics, McNeese State University, Lake Charles, Louisiana 70609 (United States); Kandalam, Anil K. [Department of Physics, West Chester University, West Chester, Pennsylvania 19383 (United States)

    2014-04-28

    Boron aluminum hydride clusters are studied through a synergetic combination of anion photoelectron spectroscopy and density functional theory based calculations. Boron aluminum hydride cluster anions, B{sub x}Al{sub y}H{sub z}{sup −}, were generated in a pulsed arc cluster ionization source and identified by time-of-flight mass spectrometry. After mass selection, their photoelectron spectra were measured by a magnetic bottle-type electron energy analyzer. The resultant photoelectron spectra as well as calculations on a selected series of stoichiometries reveal significant geometrical changes upon substitution of aluminum atoms by boron atoms.

  14. Analyses of beyond design basis accident homogeneous boron dilution scenarios

    Energy Technology Data Exchange (ETDEWEB)

    Kereszturi, Andras; Hegyi, Gyoergy; Maraczy, Csaba; Trosztel, Istvan; Tota, Adam [Hungarian Academy of Sciences, Centre for Energy Research, Budapest (Hungary); Karsa, Zoltan [NUBIKI Nuclear Safety Research Institute, Ltd., Budapest (Hungary)

    2015-09-15

    Homogeneous boron dilution scenarios in a VVER-440 reactor were analyzed using the coupled KIKO3D-ATHLET code. The scenarios are named ''homogeneous'' because of the very slow dilution caused by a rupture in the heat exchanger of the makeup system. Without the presented analyses, a significant contribution of the homogeneous boron dilution to the Core Damage Frequency (CDF) had to be assumed in the Probabilistic Safety Analyses (PSA). According to the combined results of the presented deterministic and probabilistic analyses, the final conclusion is that boron dilution transients don't give significant contribution to the CDF for the investigated VVER-440 NPP.

  15. Proceedings of workshop on 'boron chemistry for neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the workshop on the chemistry of Boron Neutron Capture Therapy held on 1st of August in 1988 and on 22nd of January in 1990. In this workshop, our attention was mainly focused on the chemical reactions and chemical analyses of boron compounds used for the therapy. There is additionally shown the basic knowledge of immunology related with the neutron capture therapy. We do hope that this proceedings will contribute to the development of new boron carriers for the therapy. (J.P.N.)

  16. Isotopic effects on the phonon modes in boron carbide.

    Science.gov (United States)

    Werheit, H; Kuhlmann, U; Rotter, H W; Shalamberidze, S O

    2010-10-01

    The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals. PMID:21403227

  17. Hugoniot equation of state and dynamic strength of boron carbide

    International Nuclear Information System (INIS)

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  18. Hugoniot equation of state and dynamic strength of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, Dennis E. [Applied Research Associates, Southwest Division, 4300 San Mateo Blvd NE, A-220, Albuquerque, New Mexico 87110-129 (United States)

    2015-04-28

    Boron carbide ceramics have been particularly problematic in attempts to develop adequate constitutive model descriptions for purposes of analysis of dynamic response in the shock and impact environment. Dynamic strength properties of boron carbide ceramic differ uniquely from comparable ceramics. Furthermore, boron carbide is suspected, but not definitely shown, to undergoing polymorphic phase transformation under shock compression. In the present paper, shock-wave compression measurements conducted over the past 40 years are assessed for the purpose of achieving improved understanding of the dynamic equation of state and strength of boron carbide. In particular, attention is focused on the often ignored Los Alamos National Laboratory (LANL) Hugoniot measurements performed on porous sintered boron carbide ceramic. The LANL data are shown to exhibit two compression anomalies on the shock Hugoniot within the range of 20–60 GPa that may relate to crystallographic structure transitions. More recent molecular dynamics simulations on the compressibility of the boron carbide crystal lattice reveal compression transitions that bear similarities to the LANL Hugoniot results. The same Hugoniot data are complemented with dynamic isentropic compression data for boron carbide extracted from Hugoniot measurements on boron carbide and copper granular mixtures. Other Hugoniot measurements, however, performed on near-full-density boron carbide ceramic differ markedly from the LANL Hugoniot data. These later data exhibit markedly less compressibility and tend not to show comparable anomalies in compressibility. Alternative Hugoniot anomalies, however, are exhibited by the near-full-density data. Experimental uncertainty, Hugoniot strength, and phase transformation physics are all possible explanations for the observed discrepancies. It is reasoned that experimental uncertainty and Hugoniot strength are not likely explanations for the observed differences. The notable

  19. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  20. Process for producing wurtzitic or cubic boron nitride

    International Nuclear Information System (INIS)

    Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described

  1. Photometric and emission-spectrometric determination of boron in steels

    International Nuclear Information System (INIS)

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated. (orig.)

  2. Photometric and emission-spectrometric determination of boron in steels

    Energy Technology Data Exchange (ETDEWEB)

    Thierig, D.

    1982-01-01

    A method for the photometric determination of boron in unalloyed and alloyed steels is described, in which Curcumine is used as reagent. A separation of boron is not necessary. Limit of detection: 0.0003% B. The decomposition of boron nitride in the steel is achieved by heating the whole sample in fuming sulphuric acid/phosphoric acid. For the emission spectrometric investigation of solid steel samples and for the spectrochemical analysis of solutions with plasma excitation working parameters are given and possibilities of interferences are demonstrated.

  3. Tuning field emission properties of boron nanocones with catalyst concentration

    International Nuclear Information System (INIS)

    Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe3O4 nanoparticles are pre-manipulated on Si(111) to form catalyst patterns of different densities. The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles. High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization. The field emission behaviour is optimal when the spacing distance is close to the nanocone length, which indicates that this simple spin spread method has great potential applications in electron emission nanodevices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Analyses of beyond design basis accident homogeneous boron dilution scenarios

    International Nuclear Information System (INIS)

    Homogeneous boron dilution scenarios in a VVER-440 reactor were analyzed using the coupled KIKO3D-ATHLET code. The scenarios are named ''homogeneous'' because of the very slow dilution caused by a rupture in the heat exchanger of the makeup system. Without the presented analyses, a significant contribution of the homogeneous boron dilution to the Core Damage Frequency (CDF) had to be assumed in the Probabilistic Safety Analyses (PSA). According to the combined results of the presented deterministic and probabilistic analyses, the final conclusion is that boron dilution transients don't give significant contribution to the CDF for the investigated VVER-440 NPP.

  5. Synthesis of boron nitride from boron containing poly(vinyl alcohol) as ceramic precursor

    Indian Academy of Sciences (India)

    M Das; S Ghatak

    2012-02-01

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD).

  6. Proceedings of workshop on 'boron chemistry and boron neutron capture therapy'

    International Nuclear Information System (INIS)

    This volume contains the proceedings of the 5th Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 22 in 1993. The solubility of the boron carrier play an important role in the BNCT. New water-soluble p-boronophenylalanine derivatives are synthesized and their biological activities are investigated (Chap. 2 and 3). Some chemical problems on the BNCT were discussed, and the complex formation reaction of hydroxylboryl compounds were studied by the paper electrophoresis (Chap. 4). The results of the medical investigation on the BNCT using BSH compounds are shown in Chap. 5. Syntheses of o- and m-boronophenylalanine were done and their optical resolution was tried (Chap. 6). The complex formation reaction of p-boronophenylalanine (BPA) with L-DOPA and the oxidation reaction of the analogs are found in Chap. 7. The pka of BPA were determined by the isotachophoresis (Chap. 8). The chemical nature of dihydroxyboryl compounds were investigated by an infrared spectroscopy and electrophoresis (Chap. 9). New synthetic methods of BPA and p-boronophenylserine using ester of isocyanoacetic acid are described in Chap. 10. The induction of chromosomal aberations by neutron capture reaction are discussed from a point of the biological view. The a of the presented papers are indexed individually. (J.P.N.)

  7. Determination of Boron Trifluoride in Boron Trifluoride Complex by Fluoride Ion Selective Electrode

    Institute of Scientific and Technical Information of China (English)

    郎五可; 张卫江; 唐银; 徐姣; 张雷

    2016-01-01

    A method was proposed to determine boron trifluoride in boron trifluoride complex using fluoride ion selective electrode(ISE). Hydroxide was chosen to mask aluminum for the determination of 0.01—0.1 mol/L of fluoride. The simulation indicated that the permissible aluminum masked at a certain pH value was limited and hardly related to F-concentration and boric acid. It is better to control pH value below 11.5 and the aluminum con-centration within 0.025 mol/L to minimize the interference of hydroxide to the fluoride ISE. The decomposition conditions of boron trifluoride by aluminum chloride were investigated. It is found that the F-detection ratio will approach 1.0 if the Al/F molar ratio is 0.3—0.7 and aluminum concentration is no more than 0.02 mol/L when heated at 80℃ for 10 min. In one word, hydroxide is quite fit to mask aluminum for samples which contain high content of fluoride and aluminum and the BF3 content can be successfully determined by this method.

  8. The optical properties of boron carbide near boron K-edge inside periodical multilayers

    International Nuclear Information System (INIS)

    Multilayer mirrors made for the use in the wavelength range near K-edge of boron (188 eV) are of great interest for X-ray fluorescence analysis of boron content in doped semiconductors, plasma diagnostics, astronomy and lithography. Moreover, multilayer mirrors composed by a metal and a low Z element like boron are used as optical elements in both the soft x-ray spectral range as well as at higher photon energies on 3rd generation synchrotron beamlines. Using an energy-resolved photon-in-photon-out method we reconstructed the optical data from energy dependence of both integrated peak intensity and FWHM of the 1st order ML Bragg peak measured at the UHV triple axis soft-x-ray reflectometer at BESSY II. The experiments clearly demonstrate that the peak shape of the ML Bragg peak is most sensitive to any kind of electronic excitation and recombination in solid. The soft-ray reflectivity can give detailed information for MLs with thickness up to several tens of nanometers. In addition, measurements close to a resonance edge probe the chemical state of the respective constituent accompanied with a high sensitivity of changes close to the sample surface.

  9. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    International Nuclear Information System (INIS)

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm2, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x106x[OH]0.11x[CD]0.62x[IBC]-0.57x[DSE]-0.04x[T] -2.98x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  10. An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

    2007-06-01

    In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

  11. Optical absorption of boron nitride nanomaterials

    International Nuclear Information System (INIS)

    Optical absorption spectra have been measured for hexagonal boron nitride (h-BN), rhombohedral BN(rh-BN), and material obtained by laser vaporization of BN target under a nitrogen atmosphere and contained single-wall BN-nanotubes. Band gap of the BN materials was found to have a value of 6.0-6.3 eV. The spectra of h -BN and vaporized material exhibited a peak at ∝5.5 eV, moreover, the latter sample showed an absorption band around 4.5 eV. The vaporized material has been fractionated to the BN-platelets and single-wall BN-nanotubes. Absorption peaks, located bellow the bottom of the conductance band, were found to be characteristics of thin BN-platelets and they could be attributed to defects in BN network. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  13. Boronized steels with corundum-baddeleyite coatings

    Directory of Open Access Journals (Sweden)

    P. Pokorny

    2016-07-01

    Full Text Available The paper describes preparation and properties of anti-corrosion and anti-abrasive coatings from corundum-baddeleyite ceramics deposited on surface of low-carbon boronized steel S235JRH-1.0038 (EN 10025-1 by plasma spraying method. Adhesive interlayers Fe2B reaches bond strength of up to 20 MPa in the pull-off tests, the ZrO2 - Al2O3 - SiO2 coatings have a value of fracture adhesion of 4 - 6 MPa. Hardness of these ceramic coatings on steel is as high as 1 800 HV100 and its polarization resistance is 1 600 Ω/cm2 to 4 000 Ω/cm2.

  14. Quantum emission from hexagonal boron nitride monolayers

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  15. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  16. Hexagonal boron nitride and water interaction parameters.

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems. PMID:27131542

  17. Hexagonal boron nitride and water interaction parameters

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  18. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp2-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  19. Pure and doped boron nitride nanotubes

    Directory of Open Access Journals (Sweden)

    M. Terrones

    2007-05-01

    Full Text Available More than ten years ago, it was suggested theoretically that boron nitride (BN nanotubes could be produced. Soon after, various reports on their synthesis appeared and a new area of nanotube science was born. This review aims to cover the latest advances related to the synthesis of BN nanotubes. We show that these tubes can now be produced in larger amounts and, in particular, that the chemistry of BN tubes appears to be very important to the production of reinforced composites with insulating characteristics. From the theoretical standpoint, we also show that (BN-C heteronanotubes could have important implications for nanoelectronics. We believe that BN nanotubes (pure and doped could be used in the fabrication of novel devices in which pure carbon nanotubes do not perform very efficiently.

  20. Production of polyoxoboronate as novel boron compound

    International Nuclear Information System (INIS)

    Polyoxometalates are negatively charged inorganic substances which contain early transitional metal ions such as tungsten, molybdenum, making a cluster with the surrounding oxygen atoms. We prepared novel boron compound, (H15[V1210B32O84Na4]·13H2O; 10B32), as the structure of polyoxometalates. With thermal neutron irradiation, 10B32 shows cytotoxic effect on the proliferation of AsPC-1 cells in colony formation assay. On BNCT model mice bearing AsPC-1, 10B32 shows tumor growth suppression, as well. These results indicate that 10B32 has anti-tumor activity being functioned as a novel neutron capture agent. (author)

  1. Boron in Plants: Deficiency and Toxicity

    Institute of Scientific and Technical Information of China (English)

    Juan J. Camacho-Crist6bal; Jesus Rexach; Agustin González-Fontess

    2008-01-01

    Boron (B) is an essential nutrient for normal growth of higher plants, and B availability in soil and irrigation water is an important determinant of agricultural production. To date, a primordial function of B is undoubtedly its structural role in the cell wall; however, there is increasing evidence for a possible role of B in other processes such as the maintenance of plasma membrane function and several metabolic pathways. In recent years, the knowledge of the molecular basis of B deficiency and toxicity responses in plants has advanced greatly. The aim of this review is to provide an update on recent findings related to these topics, which can contribute to a better understanding of the role of B in plants.

  2. Considerations on boron neutron capture therapy

    International Nuclear Information System (INIS)

    This article reviews the radiotherapy technique called Boron Neutron Capture Therapy - BNCT. Herein, basic concepts in BNCT are addressed, particularly how BNCT has been used in the attempts of defeating multiform glioblastoma. The history of the BNCT trials in the 50's and 60's, including the previous trials at Brookhaven National Laboratory (BNL) and at the Massachusetts Institute of Technology (MIT) are presented. The Japanese experience in BNCT is discussed. Recently, clinical trials at the MIT and BNL have started, focusing multiform glioblastoma and peripheral and intracranial melanomas. Radiobiological and clinical data from Phase I trials on MIT are discussed. Considerations in how BNCT can be developed in Brazil are presented. It shows that Cf-252 Brachytherapy coupled with NCT may be a non-expensive, alternative way of addressing BNCT. (author)

  3. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  4. Anesthetic management of Boron Neutron Capture Therapy for glioblastoma

    International Nuclear Information System (INIS)

    General anesthesia was given to twenty-seven patients who received Boron Neutron Capture Therapy (BNCT) under craniotomy at Kyoto University Research Reactor from 1991 to 1999. Special considerations are required for anesthesia. (author)

  5. Molecular Dynamics Modeling of Piezoelectric Boron Nirtride Nanotubes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Boron-nitride nanotubes (BNNTs) exhibit electroactive behavior in response to mechanical deformation, but the origin of this phenomenon is not well understood. Our...

  6. Isotopic compositions of boron in sediments and their implications

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Yingkai, X.

    The abundance and isotopic compositions of boron in sediments from the salt lakes of Qaidam Basin, China have been determined by thermal ionization mass spectrometry of cesium borate. The results show large variations in the isotopic compositions...

  7. Experimental core electron density of cubic boron nitride

    DEFF Research Database (Denmark)

    Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse;

    boron nitride we may obtain a deeper understanding of the effect of bonding on the total density. We report here a thorough investigation of the charge density of cubic boron nitride with a detailed modelling of the inner atom charge density. By combining high resolution powder X-ray diffraction data...... has been obtained. The displacement parameters reported here are significantly lower than those previously reported, stressing the importance of an adequate description of the core density. The charge transfer from boron to nitrogen clearly affects the inner electron density, which is evident from...... theoretical as well as experimental result. The redistribution of electron density will, if not accounted for, result in increased thermal parameters. It is estimated that 1.7-2 electrons is transferred from boron to nitrogen. [1]: N. Bindzus, T. Straasø, N. Wahlberg, J. Becker, L. Bjerg, N. Lock, A...

  8. Corrosion resistance testing of high-boron-content stainless steels

    International Nuclear Information System (INIS)

    Boron steels, i.e. stainless steels with boron contents of 0.2 to 2.25 wt.%, are employed in nuclear engineering for the manufacture of baskets or wells in which radioactive fissile materials are stored, mostly spent nuclear fuel elements. The resistance of such steels to intergranular corrosion and uniform corrosion was examined in the Strauss solution and in boric acid; the dependence of the corrosion rate of the steels on their chemical composition was investigated, and their resistance was compared with that of AISI 304 type steel. Corrosion resistance tests in actual conditions of ''wet'' compact storage (demineralized water or a weak boric acid solution) gave evidence that boron steels undergo nearly no uniform corrosion and, as electrochemical measurements indicated, match standard corrosion-resistant steels. Corrosion resistance was confirmed to decrease slightly with increasing boron content and to increase somewhat with increasing molybdenum content. (Z.S.). 3 tabs., 4 figs., 7 refs

  9. Spectrographic determination of traces of boron in steels

    International Nuclear Information System (INIS)

    A spectrographic method has been developed to determine quantitatively boron in steels in the 0.5 to 250 ppm concentration range. The samples are dissolved in acids and transformed into oxides, avoiding boron losses by the addition of mannitol. For the fluoride evolution of boron in the dc arc the following compounds have been considered: CuF2, LiF, NaF, and SrF2. CuF2, at a concentration of 10%, provides the highest line-to-background intensity ratio. An arc current of 5 amperes eliminates the interference from iron spectrum on the most sensitive boron line - B 2497.7 A. Variations in chromium and nickel contents have no effect on the analytical results. (author)

  10. Phonon transport in single-layer Boron nanoribbons

    CERN Document Server

    Zhang, Zhongwei; Peng, Qing; Chen, Yuanping

    2016-01-01

    Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and tr...

  11. On surface Raman scattering and luminescence radiation in boron carbide.

    Science.gov (United States)

    Werheit, H; Filipov, V; Schwarz, U; Armbrüster, M; Leithe-Jasper, A; Tanaka, T; Shalamberidze, S O

    2010-02-01

    The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications. PMID:21386312

  12. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses. PMID:24052052

  13. Functionalization and cellular uptake of boron carbide nanoparticles

    DEFF Research Database (Denmark)

    Mortensen, M. W.; Björkdahl, O.; Sørensen, P. G.; Hansen, T.; Jensen, M. R.; Gundersen, Hans Jørgen Gottlieb; Bjørnholm, T.

    2006-01-01

    In this paper we present surface modification strategies of boron carbide nanoparticles, which allow for bioconjugation of the transacting transcriptional activator (TAT) peptide and fluorescent dyes. Coated nanoparticles can be translocated into murine EL4 thymoma cells and B16 F10 malignant...... melanoma cells in amounts as high as 0.3 wt. % and 1 wt. %, respectively. Neutron irradiation of a test system consisting of untreated B16 cells mixed with B16 cells loaded with boron carbide nanoparticles were found to inhibit the proliferative capacity of untreated cells, showing that cells loaded with...... boron-containing nanoparticles can hinder the growth of neighboring cells upon neutron irradiation. This could provide the first step toward a T cell-guided boron neutron capture therapy....

  14. Radial furnace shows promise for growing straight boron carbide whiskers

    Science.gov (United States)

    Feingold, E.

    1967-01-01

    Radial furnace, with a long graphite vaporization tube, maintains a uniform thermal gradient, favoring the growth of straight boron carbide whiskers. This concept seems to offer potential for both the quality and yield of whiskers.

  15. Fractionation of Boron Isotopes in Icelandic Hydrothermal Systems

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, J.K.; Palmer, M.R.

    1995-01-01

    Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive {delta}{sup 11}B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive {delta}{sup 11}B than the high temperature systems, indicating fractionation of boron due to adsorption of the lighter isotope onto secondary minerals. Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems.

  16. Thin boron nitride nanotubes formed during annealing in ammonia gas

    International Nuclear Information System (INIS)

    Full text: We present a mechano-thermal process to synthesis thin boron nitride nanotubes of diameter around 7 nanometers. They were produced by mechanical milling of amorphous boron powder at ambient temperature, followed by thermal annealing in ammonia gas. High energy ball milling creates a precursor containing a high density of nanocrystalline BN seeds and fine particles of metal catalyst. Nanotubes grow out from the milled boron powder during subsequent annealing. The novelty of this approach lies in the formation of the thin BN nanotubes by annealing in ammonia gas instead of nitrogen gas. The boron nitride nanotubes produced have a well-defined crystalline structure and there is no iron within them. If nitrogen gas is used, thicker nanotubes of diameter in the range of 20-100 nm were obtained and iron was more likely to be found inside the nanotubes. Copyright (2005) Australian Institute of Physics

  17. Analytical chemistry methods for boron carbide absorber material. [Standard

    Energy Technology Data Exchange (ETDEWEB)

    DELVIN WL

    1977-07-01

    This standard provides analytical chemistry methods for the analysis of boron carbide powder and pellets for the following: total C and B, B isotopic composition, soluble C and B, fluoride, chloride, metallic impurities, gas content, water, nitrogen, and oxygen. (DLC)

  18. Precipitation of boron in silicon on high-dose implantation

    International Nuclear Information System (INIS)

    Precipitation of boron implanted in silicon with a dose of 1 x 1016 cm-2 is studied in relation to the concentration of substitutional boron CB0 introduced before implantation and before subsequent annealing at 900 deg. C. It is shown that CB0 = 2.5 x 1020 cm-3 is the critical concentration, at which the formation of precipitates is independent of the concentration of point defects introduced by implantation (far from or close to the mean projected range Rp) and constitutes the prevailing channel of deactivation of boron. At lower concentrations CB0 close to the equilibrium concentration, precipitation is observed only far from Rp, in the regions of reduced concentrations of point defects. At the same time, in the region of Rp with a high concentration of point defects, most boron atoms are drawn into clustering with intrinsic interstitial atoms with the formation of dislocation loops and, thus, become electrically inactive as well.

  19. Electrodialysis of boron-containing solutions using homogeneuos ionite membranes

    International Nuclear Information System (INIS)

    Electrodialysis of boron-containing solutions is studied when preparing potable water from the sea one with the limiting admissible concentration (LAC) of boron 0.5 mg/dm3. It is ascertained that at pH>7 diffusion permeability of anion- and cation-exchange membranes as regards boron reduces both in the absence of external field and at current density 0.3 A/dm3. It is shown that when MK-100 homogeneous cationic membranes and MA-100 homogeneous anionic membranes are used, boron concentration in dialyzate decreases to LAC, if the process is realized in acid and low-acid media and if the depth of freshening increases to 0.2g/l

  20. Boron isotope method for study of seawater intrusion

    Institute of Scientific and Technical Information of China (English)

    肖应凯; 尹德忠; 刘卫国; 王庆忠; 魏海珍

    2001-01-01

    A distinct difference in boron isotopes between seawater and terrestrial water is emphasized by δ11B values reported for seawater and groundwater, with an average of 38.8‰ and in the range of -8.9‰ to 9.8‰, respectively. The isotopic composition of boron in groundwater can be used to quantify seawater intrusion and identify intrusion types, e.g. seawater or brine intrusions with different chemical and isotopic characteristics, by using the relation of δ11B and chloride concentration. The feasibility of utilizing boron isotope in groundwater for studying seawater intrusion in Laizhou Bay Region, China, is reported in this study, which shows that boron isotope is a useful and excellent tool for the study of seawater intrusion.

  1. Electronic structure of boron-interstitial clusters in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Deak, Peter [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Gali, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Solyom, Andras [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Buruzs, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, Budapest, H-1111 (Hungary); Frauenheim, Thomas [University of Paderborn, Theoretical Physics, Paderborn, D-33095 (Germany)

    2005-06-08

    Hybrid functional calculations within density functional theory are carried out to investigate the electronic structure of boron-interstitial clusters (BICs). A one-parameter hybrid functional is chosen is to give accurate results for the whole electronic structure (including the gap) and the elastic properties of crystalline silicon. It is shown that this approach provides dependable defect level positions in the gap. Investigation of the boron+vacancy and boron+self-interstitial centres gives a consistent description of the experimentally observed G10 and G28 centres. The electronic structure of BICs, which may affect the activation rate of boron implantation, are reported. The one-electron level positions of isolated B{sub n}I{sub m} defects are given.

  2. Recent Advances in Boron-Containing Conjugated Porous Polymers

    Directory of Open Access Journals (Sweden)

    Feng Qiu

    2016-05-01

    Full Text Available Porous polymers, integrating the advantages of porous materials and conventional polymers, have been well developed and exhibited tremendous attention in the fields of material, chemistry and biology. Of these, boron-containing conjugated porous polymers, featuring tunable geometric structures, unique Lewis acid boron centers and very rich physical properties, such as high specific surface, chargeable scaffold, strong photoluminescence and intramolecular charge transfer, have emerged as one of the most promising functional materials for optoelectronics, catalysis and sensing, etc. Furthermore, upon thermal treatment, some of them can be effectively converted to boron-doped porous carbon materials with good electrochemical performance in energy storage and conversion, extensively enlarging the applicable scope of such kinds of polymers. In this review, the synthetic approaches, structure analyses and various applications of the boron-containing conjugated porous polymers reported very recently are summarized.

  3. Effect of boron on sintering of a ferritic stainless steel

    International Nuclear Information System (INIS)

    This work studies the effect of boron on the density of a 409Nb ferritic stainless steel obtained by powder metallurgy during the process of sintering. The purpose of adding boron is to promote the formation of a liquid phase during sintering at temperatures below 120 degree centigrade . The boron contents varied from 0.0 to 1.5%wt. Specimens were compacted at 700MPa, and sintering was made at 1075 and 1150 degree centigrade during 60 minutes under a hydrogen atmosphere, using a heating rate of 20 degree centigrade/min. Density values were determined by the Archimedes method, and the samples were analysed using scanning electron microscopy. This work shows the dependence of the steel density and morphology of the microstructure as a function of boron content and the temperature of sintering. (Author) 29 refs

  4. For boron neutron capture therapy,synthesizing boron-polymer compounds and testing in laboratory conditions

    International Nuclear Information System (INIS)

    The aim of this project is to establish a focus point at Turkish Atomic Energy Authority (TAEA) in the field of Boron Neutron Capture Therapy which is a binary radiotherapy method for brain tumours. Moreover in the scope of the project, a new alternative of 10B-carrier compounds will be synthesized, the neutron source will be determined and the infrastructure to start the clinical trials of BNCT in our country will be established. BNCT is a binary radiotherapy method and the successful of this method is depend on the synthesized boron compounds which have the selective targeting property with tumour cells and neutron optimization. The water-soluble polymer based boron compounds having biochemical and physiological properties will be synthesized and cell culture experiment will be done. In addition, after the neutron source is set up in our country, the infrastructure studies will be started in order to start the clinical trials of BNCT. In this project, there are three different groups as boron compounds, neutron physics and medical group. Neutron physics group is starting the calculations of neutron beam parameters using in BNCT application. But, medical group has no active studies yet. Boron compounds group has been carried out two different experimental studies. In the first experimental study, functional groups have been bound to boron containing polymers to enhance the selectively targeting property and characterized by various analysis methods. Later, cell culture experiment will be done. The first study has been carried out with Hacettepe University. Up to present, completed studies are listed as: -Maleic anhydride oligomer was synthesized and then 2-aminoethyl diphenyl borate (2-AEPB) and monomethoxy poly(ethylene glycol) (PEG) was bound to this oligomer, respectively. Thus, [MAH]n-g1-2-AEPB-g2-PEG was synthesized. -2-AEPB compound were bound to poly(acrylic acid) polymer at different three mole ratio.Then, the selected Poli(Ac)-g1-2-AEPB polymer was

  5. Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy

    Science.gov (United States)

    2009-01-01

    Boron neutron capture therapy (BNCT) is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of10B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly-l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots) to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors. PMID:20596476

  6. Explicitly correlated wave function for a boron atom

    CERN Document Server

    Puchalski, Mariusz; Pachucki, Krzysztof

    2015-01-01

    We present results of high-precision calculations for a boron atom's properties using wave functions expanded in the explicitly correlated Gaussian basis. We demonstrate that the well-optimized 8192 basis functions enable a determination of energy levels, ionization potential, and fine and hyperfine splittings in atomic transitions with nearly parts per million precision. The results open a window to a spectroscopic determination of nuclear properties of boron including the charge radius of the proton halo in the $^8$B nucleus.

  7. Manufacturing uniform field silicon drift detector using double boron layer

    International Nuclear Information System (INIS)

    Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field

  8. Cubic boron nitride- a new material for ultracold neutron application

    International Nuclear Information System (INIS)

    For the first time, the Fermi potential of cubic boron nitride (cBN) was measured at the ultra cold neutron source at the TRIGA reactor, Mainz using the time of flight method (TOF). The investigated samples have a Fermi potential of about 300 neV. Because of its good dielectric characteristics, cubic boron nitride could be used as suitable coating for insulator in storage chambers of future EDM projects. This talk presents recent results and an outlook on further investigations.

  9. Research of nanocomposite structure of boron nitride at proton radiation

    OpenAIRE

    Borodin, Yuri Viktorovich; Ermolaev, D. S.; Pak, V.; Zhang, K.

    2016-01-01

    Using roentgen diffraction and electron microscopy, the influence of nanosecond irradiation by ion beams of high energy on forming of self-organized nanoblocks in near surface's layers of boron nitride (BN) has been studied. It was shown that low temperature transitions from hexagonal to wrutz boron nitrides is associated with changes of shape and sizes of self-organized particles consisting the nanoblocks. We have calculated the parameters of nanoblocks using the meanings of interplane dista...

  10. Does boron affect hormone levels of barley cultivars?

    OpenAIRE

    Muavviz Ayvaz; Mesut Koyuncu; Avni Guven; FAGERSTEDT, KURT V.

    2012-01-01

    Background: When mineral nutrients are present in excess or in inadequate amounts, their effects can be severe in plants and can be considered as abiotic stress. In this study, we report how hormonal levels in barley cultivars respond to the toxic effect of boron, an essential plant micronutrient. Material and methods: Two different barley (Hordeum vulgare) cultivars (Vamik Hoca and Efes 98) were used as a study material. Boron was applied in three different concentrations (0, 10, 20 ppm) ...

  11. Determination of boron in nuclear grade sodium metal

    International Nuclear Information System (INIS)

    Determination of boron in nuclear grade sodium metal as rosocyanin and rubrocurcumin complexes is described. Separation of sodium matrix was attempted by vacuum distillation of sodium, methyl borate distillation and ion exchange methods. The ion exchange method was found to be most suitable. Optimum conditions were standardised for the estimation of boron in nuclear grade sodium. In the 200 ppb range an RSD of 5 per cent was obtained. (author). 12 refs

  12. Magnesium and Boron Combustion in Hot Steam Atmosphere

    OpenAIRE

    V. Rosenband; A. Gany; Timnat, Y.M.

    1998-01-01

    This paper investigates the combustion of magnesium and boron powders in hot steam. A thermochemical analysis reveals theoretical results of such interactions. An experimental investigation demonstrates that stable exothermic oxidation takes place, resulting in actual combustion at 1100 °c for magnesium and 800 °c for boron. The reaction generates large quantity of gaseous products consisting of almost pure hydrogen and corresponding to about 60 per cent of a complete chemical reaction

  13. Magnesium and Boron Combustion in Hot Steam Atmosphere

    Directory of Open Access Journals (Sweden)

    V. Rosenband

    1998-07-01

    Full Text Available This paper investigates the combustion of magnesium and boron powders in hot steam. A thermochemical analysis reveals theoretical results of such interactions. An experimental investigation demonstrates that stable exothermic oxidation takes place, resulting in actual combustion at 1100 °c for magnesium and 800 °c for boron. The reaction generates large quantity of gaseous products consisting of almost pure hydrogen and corresponding to about 60 per cent of a complete chemical reaction

  14. Disorder and defects are not intrinsic to boron carbide

    OpenAIRE

    Swastik Mondal; Elena Bykova; Somnath Dey; Sk. Imran Ali; Natalia Dubrovinskaia; Leonid Dubrovinsky; Gleb Parakhonskiy; Sander van Smaalen

    2016-01-01

    A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichio...

  15. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    OpenAIRE

    Samantha Bruzzone; Demetrio Logoteta; Gianluca Fiori; Giuseppe Iannaccone

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double...

  16. Boron-oxygen polyanion in the crystal structure of tunellite

    Science.gov (United States)

    Clark, J.R.

    1963-01-01

    The crystal structure of tunellite, SrO??3B2O 3??4H2O, with infinite sheets of composition n[B6O9(OH)2]2-, has cations and water molecules in the spaces within the sheets. Adjacent sheets are held together by hydrogen bonding through the water molecules. The boron-oxygen polyanions provide the first example in hydrated borate crystals of one oxygen linked to three borons.

  17. The Influence of Parameters Affecting Boron Removal by Electrocoagulation Process

    KAUST Repository

    Zeboudji, B.

    2013-04-01

    Boron removal in seawater desalination presents a particular challenge. In seawater reverse osmosis (SWRO) systems boron removal at low concentration (<0.5 mg/L) is usually achieved by a second pass using brackish water RO membranes. However, this process requires chemical addition and important additional investment, operation and maintenance, and energy costs. Electrocoagulation (EC) process can be used to achieve such low boron concentration. In this work, the removal of boron from aqueous solution was carried out by EC process using aluminum and iron electrodes. Several operating parameters on the removal efficiency such as initial pH, current density, initial boron ion concentration, feed concentration, gap between electrodes, and electrode material, were investigated. In the case of bipolar electrocoagulation (BEC), an optimum removal efficiency of 96% corresponding to a final boron concentration of 0.4 mg/L was achieved at a current density of 6 mA/cm2 and pH = 8 using aluminum electrodes. The concentration of NaCl was 2,500 mg/L and the gap between the electrodes of 0.5 cm. Furthermore, a comparison between monopolar electrocoagulation (MEC) and BEC using both aluminum and iron electrodes was carried out. Results showed that the BEC process has reduced the current density applied to obtain high level of boron removal in a short reaction time compared to MEC process. The high performance of the EC showed that the process could be used to reduce boron concentration to acceptable levels at low-cost and more environmentally friendly. © 2013 Copyright Taylor and Francis Group, LLC.

  18. An introduction to boron: history, sources, uses, and chemistry.

    OpenAIRE

    Woods, W G

    1994-01-01

    Following a brief overview of the terrestrial distribution of boron in rocks, soil, and water, the history of the discovery, early utilization, and geologic origin of borate minerals is summarized. Modern uses of borate-mineral concentrates, borax, boric acid, and other refined products include glass, fiberglass, washing products, alloys and metals, fertilizers, wood treatments, insecticides, and microbiocides. The chemistry of boron is reviewed from the point of view of its possible health e...

  19. Experimental realization of two-dimensional boron sheets

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Zhong, Qing; Li, Wenbin; Li, Shuai; Li, Hui; Cheng, Peng; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-06-01

    A variety of two-dimensional materials have been reported in recent years, yet single-element systems such as graphene and black phosphorus have remained rare. Boron analogues have been predicted, as boron atoms possess a short covalent radius and the flexibility to adopt sp2 hybridization, features that favour the formation of two-dimensional allotropes, and one example of such a borophene material has been reported recently. Here, we present a parallel experimental work showing that two-dimensional boron sheets can be grown epitaxially on a Ag(111) substrate. Two types of boron sheet, a β12 sheet and a χ3 sheet, both exhibiting a triangular lattice but with different arrangements of periodic holes, are observed by scanning tunnelling microscopy. Density functional theory simulations agree well with experiments, and indicate that both sheets are planar without obvious vertical undulations. The boron sheets are quite inert to oxidization and interact only weakly with their substrate. We envisage that such boron sheets may find applications in electronic devices in the future.

  20. Spontaneous Boron-doping of Graphene at Room Temperature

    Science.gov (United States)

    Pan, Lida; Que, Yande; Du, Shixuan; Gao, Hongjun; Pantelides, Sokrates T.

    2015-03-01

    Doping graphene with boron or nitrogen is an effective way to modify its electronic properties. However, the reaction barrier for introducing these impurities is quite high, making the doping process difficult. In this work, we propose a low-energy reaction route derived from first-principles calculations and subsequently validated by experiments. The calculations show that, when graphene is placed on a ruthenium substrate and exposed to atomic boron, boron atoms can incorporate substitutionally into the graphene sheet with an energy barrier about 0.1 eV, displacing carbon atoms below the graphene sheet where they migrates away. This result suggests that spontaneous doping by boron can take place at room temperature. Following the prediction, we grew high-quality graphene on the Ru(0001) surface and then expose it to B2H6 which decomposes into atomic boron. XPS and STM results indicate that boron dopes graphene substantially without disturbing the graphene lattice, confirming the theoretical predictions. Doping by nitrogen and co-doping by B and N will also be discussed.

  1. Structural Modification in Carbon Nanotubes by Boron Incorporation

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2009-01-01

    Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

  2. High order boron transport scheme in TRAC-BF1

    International Nuclear Information System (INIS)

    In boiling water reactors (BWR), unlike pressurized water reactors (PWR) in which the reactivity control is accomplished through movement of the control rods and boron dilution, the importance of boron transport lies in maintaining the core integrity during ATWS-kind severe accidents in which under certain circumstances a boron injection is required. This is the reason for implementing boron transport models thermal-hydraulic codes as TRAC-BF1, RELAP5 and TRACE, bringing an improvement in the accuracy of the simulations. TRAC-BF1 code provides a best estimate analysis capability for the analysis of the full range of postulated accidents in boiling water reactors systems and related facilities. The boron transport model implemented in TRAC-BF1 code is based on a calculation according to a first order accurate upwind difference scheme. There is a need in reviewing and improving this model. Four numerical schemes that solve the boron transport model have been analyzed and compared with the analytical solution that provides the Burgers equation. The studied numerical schemes are: first order Upwind, second order Godunov, second-order modified Godunov adding physical diffusion term and a third-order QUICKEST using the ULTIMATE universal limiter (UL). The modified Godunov scheme has been implemented in TRAC-BF1 source code. The results using these new schemes are presented in this paper. (author)

  3. Adsorption of boron on a Mo(110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Magkoev, Tamerlan T; Turiev, Anatolij M; Tsidaeva, Natal' ja I; Panteleev, Dmitrij G [Department of Physics, University of North Ossetia, Kesaev 121-83, Vladikavkaz 362020 (Russian Federation); Vladimirov, Georgij G; Rump, Gennadij A [Department of Physics, University of Saint Petersburg, Uljanovskaya 1-1, Saint Petersburg 198904 (Russian Federation)], E-mail: t_magkoev@mail.ru

    2008-12-03

    Adsorption of boron atoms in submonolayer to multilayer coverage on atomically clean Mo(110) surfaces has been studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and work function measurements. According to Auger results there is a layer-by-layer growth mode of the film on the substrate held at room temperature. In the submonolayer region the work function gradually increases with boron coverage until a saturation value of 5.8 eV is achieved after completion of the first monoatomic layer. The B-Mo(110) adsorbate system formed on the substrate at room temperature is not stable, dominated by a strong tendency of the boron atoms to diffuse into the bulk of the crystal. The latter is manifested by dramatic Mo(110) surface plasmon mode transformation upon boron adsorption, presumably as a result of penetration of boron atoms into the topmost substrate layer even at T = 300 K. Slight annealing up to 450 K facilitates this trend, leading to total dissolution of deposited boron atoms in the bulk of the crystal under further annealing, restoring the initial state of the Mo(110) surface after achieving a temperature of approximately 2000 K.

  4. Adsorption of boron on a Mo(110) surface

    Science.gov (United States)

    Magkoev, Tamerlan T.; Turiev, Anatolij M.; Tsidaeva, Natal'ja I.; Panteleev, Dmitrij G.; Vladimirov, Georgij G.; Rump, Gennadij A.

    2008-12-01

    Adsorption of boron atoms in submonolayer to multilayer coverage on atomically clean Mo(110) surfaces has been studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and work function measurements. According to Auger results there is a layer-by-layer growth mode of the film on the substrate held at room temperature. In the submonolayer region the work function gradually increases with boron coverage until a saturation value of 5.8 eV is achieved after completion of the first monoatomic layer. The B-Mo(110) adsorbate system formed on the substrate at room temperature is not stable, dominated by a strong tendency of the boron atoms to diffuse into the bulk of the crystal. The latter is manifested by dramatic Mo(110) surface plasmon mode transformation upon boron adsorption, presumably as a result of penetration of boron atoms into the topmost substrate layer even at T = 300 K. Slight annealing up to 450 K facilitates this trend, leading to total dissolution of deposited boron atoms in the bulk of the crystal under further annealing, restoring the initial state of the Mo(110) surface after achieving a temperature of approximately 2000 K.

  5. Mass spectral investigations of boron neutron capture therapy (BNCT) agents

    International Nuclear Information System (INIS)

    Boron neutron capture therapy (BNCT) is a promising technique for the treatment of selected types of brain tumor and potentially for other tumor types. In this therapy, a 10B-enriched species is administered to the bloodstream and selectively deposited in the tumor. The selective deposition in the tumor is due to either the breakdown of the blood-grain barrier or to the chemical nature of the boron-containing compounds. Once a sufficient concentration of boron is attained in the tumor (approximately 25 ppm), the tumor is irradiated with a controlled energy neutron beam (preferable epithermal, 1 eV to 10 keV), at which time neutrons are captured by the incorporated boron atoms. The capture results in the reaction, 10B(n, ) Li, which produces a localized nuclear reaction capable of destroying the tumor cell containing the boron. A variety of boron containing compounds have been evaluated for use in BNCT. This paper addresses some of the most promising of the compounds, the disodium salt of mercaptoundecahydrododecaborate (Na2B12H11SH), commonly referred to as BSH

  6. Boron uptake, localization, and speciation in marine brown algae.

    Science.gov (United States)

    Miller, Eric P; Wu, Youxian; Carrano, Carl J

    2016-02-01

    In contrast to the generally boron-poor terrestrial environment, the concentration of boron in the marine environment is relatively high (0.4 mM) and while there has been extensive interest in its use as a surrogate of pH in paleoclimate studies in the context of climate change-related questions, the relatively depth independent, and the generally non-nutrient-like concentration profile of this element have led to boron being neglected as a potentially biologically relevant element in the ocean. Among the marine plant-like organisms the brown algae (Phaeophyta) are one of only five lineages of photosynthetic eukaryotes to have evolved complex multicellularity. Many of unusual and often unique features of brown algae are attributable to this singular evolutionary history. These adaptations are a reflection of the marine coastal environment which brown algae dominate in terms of biomass. Consequently, brown algae are of fundamental importance to oceanic ecology, geochemistry, and coastal industry. Our results indicate that boron is taken up by a facilitated diffusion mechanism against a considerable concentration gradient. Furthermore, in both Ectocarpus and Macrocystis some boron is most likely bound to cell wall constituent alginate and the photoassimilate mannitol located in sieve cells. Herein, we describe boron uptake, speciation, localization and possible biological function in two species of brown algae, Macrocystis pyrifera and Ectocarpus siliculosus. PMID:26679972

  7. Experimental realization of two-dimensional boron sheets.

    Science.gov (United States)

    Feng, Baojie; Zhang, Jin; Zhong, Qing; Li, Wenbin; Li, Shuai; Li, Hui; Cheng, Peng; Meng, Sheng; Chen, Lan; Wu, Kehui

    2016-06-01

    A variety of two-dimensional materials have been reported in recent years, yet single-element systems such as graphene and black phosphorus have remained rare. Boron analogues have been predicted, as boron atoms possess a short covalent radius and the flexibility to adopt sp(2) hybridization, features that favour the formation of two-dimensional allotropes, and one example of such a borophene material has been reported recently. Here, we present a parallel experimental work showing that two-dimensional boron sheets can be grown epitaxially on a Ag(111) substrate. Two types of boron sheet, a β12 sheet and a χ3 sheet, both exhibiting a triangular lattice but with different arrangements of periodic holes, are observed by scanning tunnelling microscopy. Density functional theory simulations agree well with experiments, and indicate that both sheets are planar without obvious vertical undulations. The boron sheets are quite inert to oxidization and interact only weakly with their substrate. We envisage that such boron sheets may find applications in electronic devices in the future. PMID:27219700

  8. Colorimetric determination of Boron-10 in macromolecular delivery agents

    International Nuclear Information System (INIS)

    A polyglycerol with dendritic structure (PGLD) was synthesized by the ring opening polymerization of deprotonated glycidol using a polyglycerol as core functionality in a step-growth process denominated divergent synthesis. After PGLD reaction with 10B-enriched boric acid there was a marked increase in the bulk viscosity of the PGLD dendrimer evidencing the polyester formation. Gel permeation chromatography (GPC) analysis was used to characterize the molecular weight and the polydispersivity of the synthesized PGLD dendrimer. A dendritic polyglycerol structure with Mn value of 16.7 kDa and a narrow polydispersivity (Mw/Mn = 1.05) was obtained in this work. 1H-NMR and 13C-NMR measurements were employed to assess the degree of branching (DB) in PGLD. The DB of 0.85 indicates the tendency of a dentritic structure for the PGLD synthesized in this work. The boron-10 concentration was dependent of the PGLD generation. A selective reagent, curcumine, was studied for spectrophotometric determination of boron in polyglycerol dendrimers. Boron reacts with curcumine to form a complex, which has a maximum absorption peak at 552 nm. Under the optimal conditions, Beer's law was obeyed over the range 0∼20 μg of boron in 25 mL of solution. The biological assays indicate the PGLD-B with boron-10 concentration of 25 mg10B/gPGLD as the most promising macromolecule enriched with boron-10 for the BNCT therapy. (author)

  9. Conductivities and Seebeck coefficients of boron carbides: Softening bipolaron hopping

    Science.gov (United States)

    Aselage, T. L.; Emin, D.; McCready, S. S.

    2001-08-01

    The electrical conductivities and Seebeck coefficients of boron carbides B12+xC3-x with 0.06function of the composition x. This strong sensitivity to composition indicates that percolation effects, arising from boron carbides having carbon atoms in inequivalent locations, influence the conductivity at low temperature. With x holes per unit cell, boron carbides have very large Seebeck coefficients that depend only weakly on x. The magnitudes and temperature dependences of the Seebeck coefficients are consistent with large contributions from carrier-induced softening of local vibrations. Softening effects can be exceptionally large when singlet bipolarons are stabilized among degenerate electronic energy levels by their softening of symmetry-breaking vibrations: ``softening bipolarons.'' The boron carbide transport properties are generally consistent with those expected of softening bipolarons. Finally, two high-temperature effects are observed in the boron carbide conductivities. The conductivities of samples having high carrier densities, x~1, are suppressed above 700 K. This suppression can arise when the rapid hopping of nearby carriers disrupts the energy coincidence required for a carrier's hop. At even higher temperatures, a sharp increase in the boron carbide conductivities (σ~T4) suggests a radiation-induced excitation of mobile charge carriers.

  10. Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Vast, N

    1999-07-01

    The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  11. The vapour phase deposition of boron on titanium by the reaction between gaseous boron trichloride and titanium metal. Final report

    International Nuclear Information System (INIS)

    The reaction, between boron trichloride vapour and titanium has been investigated in the temperature range 200 - 1350 deg. C. It has been found that an initial reaction leads to the formation of titanium tetrachloride and the deposition of boron on titanium, but that except for reactions between 900 and 1000 deg. C, the system is complicated by the formation of lower titanium chlorides due to secondary reactions between the titanium and titanium tetrachloride

  12. Determination of boron concentration in borosilicate glass, boron carbide and graphite samples by conventional wet-chemical and nuclear analytical methods

    International Nuclear Information System (INIS)

    Boron is an important element in nuclear technology. A comparative study was carried out for the determination of boron in borosilicate glass, boron carbide and graphite samples by wet-chemical and nuclear analytical methods. Wet chemical methods namely titrimetry, Inductively Coupled Plasma Mass Spectrometry and ICP Optical Emission Spectrometry and nuclear analytical methods namely Particle Induced Gamma-Ray Emission and Nuclear Reaction Analysis were used. Boron concentrations were in trace (mg kg-1) level in graphite and percentage level in borosilicate glass and boron carbide. (author)

  13. Use of scaled BWR lower plenum boron mixing tests to qualify the boron transport model used in TRACG

    International Nuclear Information System (INIS)

    In 2001 GEH applied best estimate methods combined with a statistical methodology to determine upper bound limits for key licensing parameters for anticipated operation occurrence (AOO) transient and anticipated transients without scram (ATWS) overpressure analyses for operating Boiling Water Reactors (BWRs). The methodology was subsequently extended for ESBWR AOO, ATWS, loss of coolant, and stability analyses. GEH is extending the methodology to long-term ATWS analyses for the operating BWRs. A long-term ATWS scenario uses injection of borated water to achieve reactor shutdown. Predicting the mixing and transport of boron is important for calculating the impact on the key licensing parameters. For the many operating BWRs where the denser boron solution is injected into the lower plenum, stratification may occur, delaying boron transport to the core region. CFD modeling can be used to model the stratification and mixing of the boron solution, but such calculations are extremely computer intensive and not cost effective; therefore, a more-empirical approach supported by a theoretical scaling of the dominant phenomena and backed by test data and benchmark calculations is used. The paper presents the TRACG lower plenum boron transport model qualification effort. The scaling basis used to implement the TRACG boron transport model for BWR applications is discussed. (authors)

  14. {sup 1}H and {sup 10}B NMR and MRI investigation of boron- and gadolinium-boron compounds in boron neutron capture therapy

    Energy Technology Data Exchange (ETDEWEB)

    Bonora, M., E-mail: marco.bonora@unipv.it [Physics Department ' A. Volta' , University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [CNISM Unit (Italy); Corti, M.; Borsa, F. [Physics Department ' A. Volta' , University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [CNISM Unit (Italy); Bortolussi, S.; Protti, N.; Santoro, D.; Stella, S.; Altieri, S. [Nuclear and Theoretical Physics Department, University of Pavia, Via Bassi 6, 27100 Pavia (Italy)] [INFN Pavia (Italy); Zonta, C.; Clerici, A.M.; Cansolino, L.; Ferrari, C.; Dionigi, P. [Surgical Sciences Department, Experimental Surgery Laboratory, University of Pavia, Pavia (Italy); Porta, A.; Zanoni, G.; Vidari, G. [Organic Chemistry Department, University of Pavia, Via Taramelli 10, 27100 Pavia (Italy)

    2011-12-15

    {sup 10}B molecular compounds suitable for Boron Neutron Capture Therapy (BNCT) are tagged with a Gd(III) paramagnetic ion. The newly synthesized molecule, Gd-BPA, is investigated as contrast agent in Magnetic Resonance Imaging (MRI) with the final aim of mapping the boron distribution in tissues. Preliminary Nuclear Magnetic Resonance (NMR) measurements, which include {sup 1}H and {sup 10}B relaxometry in animal tissues, proton relaxivity of the paramagnetic Gd-BPA molecule in water and its absorption in tumoral living cells, are reported.

  15. Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida.

    Science.gov (United States)

    Rámila, Consuelo D P; Contreras, Samuel A; Di Domenico, Camila; Molina-Montenegro, Marco A; Vega, Andrea; Handford, Michael; Bonilla, Carlos A; Pizarro, Gonzalo E

    2016-11-01

    Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500mg/L), and within its tissues (>5000mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems. PMID:27322905

  16. Effect of boron fertilization of apple trees (Malus domestica Borth. on yield and fruit quality

    Directory of Open Access Journals (Sweden)

    Paweł Wójcik

    2013-12-01

    Full Text Available Aim of this work was to examine effect of boron fertilization on yield of apple trees and fruit quality. The experiment was carried out during 1994-1996 in Dąbrowice Experimental Orchard belonging to Research Institute of Pomology and Floriculture in Skiemiewice, on Š a m p i o n cultivar, grafted on M26 rootstock. Trees were planted in the autumn of 1991 at the distance 4 x 2,5 m, on sandy-loam soil. Before starting and during carrying out the study there were not visual symptoms of boron deficiency. In the experiment applied boron fertilization to the soil at the dose 2 g B per tree or three times boron sprays before or after bloom at the dose 0,67 g B per tree. Apple trees without any boron fertilization were served as a control. Results of experiment showed that only boron sprays after bloom increased fruit set and yield. There were no significant differences between treatments in fruit maturity at harvest, fruit weight losses dunng storage, apple number infected by Penicillium, Monilina and Botrytis cinerea. Boron sprays after bloom increased firmness of apples after storage and decreased sensibility to bitter pit, internal breakdown and Gloeosporium-rot. All boron treatments increased boron concentration in apples in comparison with control ones. However, the highest increase of boron concentration in apples was observed when boron sprays were done after bloom and soil boron application. Only boron sprays applied after bloom increased calcium concentration in apples.

  17. Endocytosis and degradation of BOR1, a boron transporter of Arabidopsis thaliana, regulated by boron availability

    OpenAIRE

    Takano, Junpei; Miwa, Kyoko; Yuan, Lixing; von Wirén, Nicolaus; Fujiwara, Toru

    2005-01-01

    Boron (B) is essential for plants but toxic when present in excess. Arabidopsis thaliana BOR1 is a B exporter for xylem loading and is essential for efficient B translocation from roots to shoots under B limitation. B translocation to shoots was enhanced under B limitation in WT but not in bor1-1 mutant plants. The enhanced translocation was suppressed upon resupply of high levels of B within several hours. Unlike a number of transporters for essential mineral nutrients, BOR1 mRNA accumulatio...

  18. Icosahedral boron-rich solids as refractory semiconductors

    International Nuclear Information System (INIS)

    Icosahedral boron-rich solids are refractory materials composed of twelve-atom boron-rich icosahedral units with strong intericosahedral linkages. These distinctive structures admit unusual electronic and thermal transport properties. Here the distinctive (three-center) bonding which underlies these materials is first described. Then it is shown how insulators, semiconductors and highly degenerate (metal-like) materials emerge from the same basic structure with appropriate substitutions. The electronic transport of the boron carbides is then addressed. The boron carbides are degenerate p-type semiconductors in which the charge carriers are diamagnetically aligned pairs of electrons which hop between icosahedra. Uniquely, this thermally activated hopping conductivity increases with increasing hydrostatic pressure. However, the Seebeck coefficient (thermoelectric power) is uncharacteristic of a degenerate semiconductor. Namely, the Seebeck coefficient is typically both large and an increasing function of temperature. In addition, despite the hardness and refractory character of these materials, their thermal conductivities can be surprisingly low with a glass-like temperature dependence. These features are manifestations of the distinctive structure and bonding of these solids. In fact, this novel mix of properties makes the boron carbides exceptionally good very-high-temperature p-type thermoelectric materials. Icosahedral boron-rich solids have additional potential as high temperature semiconductors. In particular, the wide-gap icosahedral boron-rich pnictides, B/sub 12/P/sub 2/ and B/sub 12/As/sub 2/, may be doped to form wide-gap refractory semiconductors. For example, replacement of the group V element with either a group VI or a group IV element is expected to yield n-type and p-type materials, respectively

  19. Photoluminescence properties of boron doped InSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ertap, H., E-mail: huseyinertap@kafkas.edu.tr [Kafkas University, Faculty of Arts and Sciences, Department of Physics, 36100 Kars (Turkey); Bacıoğlu, A. [Hacattepe University, Department of Physics Engineering, 06800, Beytepe, Ankara (Turkey); Karabulut, M. [Kafkas University, Faculty of Arts and Sciences, Department of Physics, 36100 Kars (Turkey)

    2015-11-15

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed.

  20. Novel Boron Subphthalocyanines for Organic Electronic Devices

    Science.gov (United States)

    Castrucci, Jeffrey Stephen

    Boron subphthalocyanines (BsubPcs) are a class of organic semiconductor materials that have been identified as having desirable properties for use in photovoltaic devices due to their strong light absorbance and the flexibility to develop tunable chemical derivatives. In particular, a lack of variety in available electron acceptors is an area where BsubPc derivatives can be readily substituted into existing photovoltaic device architectures. There are, however, no metrics to facilitate the rapid screening of different BsubPc derivatives. In this thesis, admittance spectroscopy is used to measure charge carrier mobility of these BsubPc derivatives, and photovoltaic cells are fabricated to evaluate these derivatives' performance in devices. We find that the measured electron carrier mobilities in thin films of BsubPc correlate with the single crystal structural parameters determined by X-ray diffraction. We also find that for BsubPcs, electron mobility measured by admittance spectroscopy is insufficient to predict photovoltaic performance when BsubPcs are used as an electron accepting layer in a device. BsubPc derivatives, however, are discovered as a new class of versatile molecules that can be designed and synthesized for use in photovoltaic devices to harvest singlet fission derived triplet excitons and consequently boost photovoltaic device photocurrent. This thesis also reports vacuum system design and construction to address experimental challenges arising from dealing with low solubility, high molar mass materials and limited amounts of high purity material.