Running Boot Camp

CERN Document Server

Toporek, Chuck

2008-01-01

When Steve Jobs jumped on stage at Macworld San Francisco 2006 and announced the new Intel-based Macs, the question wasn't if, but when someone would figure out a hack to get Windows XP running on these new "Mactels." Enter Boot Camp, a new system utility that helps you partition and install Windows XP on your Intel Mac. Boot Camp does all the heavy lifting for you. You won't need to open the Terminal and hack on system files or wave a chicken bone over your iMac to get XP running. This free program makes it easy for anyone to turn their Mac into a dual-boot Windows/OS X machine. Running Bo

Identification of a subunit of NADH-dehydrogenase as a p49/STRAP-binding protein

Directory of Open Access Journals (Sweden)

Zhong Ying

2008-01-01

Full Text Available Abstract Background The p49/STRAP (or SRFBP1 protein was recently identified in our laboratory as a cofactor of serum response factor that contributes to the regulation of SRF target genes in the heart. Results In the present study, we report that NDUFAB1, a nuclear encoded subunit of NADH dehydrogenase, represented the majority of the cDNA clones that interacted with p49/STRAP in multiple screenings using the yeast two-hybrid system. The p49/STRAP and NDUFAB1 proteins interacted and co-localized with each other in the cell. The p49/STRAP protein contains four classic nuclear localization sequence motifs, and it was observed to be present predominantly in the nucleus. Overexpression of p49/STRAP altered the intracellular level of NAD, and reduced the NAD/NADH ratio. Overexpression of p49/STRAP also induced the deacetylation of serum response factor. Conclusion These data suggest that p49/STRAP plays a role in the regulation of intracellular processes such as cardiac cellular metabolism, gene expression, and possibly aging.

Outer grid strap protruding spring repair apparatus

International Nuclear Information System (INIS)

Widener, W.H.

1987-01-01

This patent describes a nuclear fuel assembly grid spring repair apparatus for repairing a spring formed on an outer strap of a fuel assembly grid and having a portion protruding outwardly beyond the strap, the apparatus comprising: (a) a support frame defining an opening and having means defining a guide channel extending along the opening in a first direction; (b) means mounted on the frame and being adjustable for attaching the frame to the outer strap of the support grid so that the frame opening is aligned with the outwardly protruding spring on the outer strap; (c) an outer slide having a passageway defined therethrough and being mounted in the guide channel for reciprocable movement along the frame opening in the first direction for aligning the passageway with the outwardly protruding portion of the spring on the outer strap. The outer slide also has means defining a guide way extending along the passageway in a second direction generally orthogonal to the first direction; (d) a spring reset mechanism being operable for resetting the protruding spring to a nonprotruding position relative to the outer strap when the mechanism is aligned with the protruding portion of the spring; and (e) an inner slide supporting the spring reset mechanism and being mounted to the guide way for reciprocable movement along the passageway of the outer slide in the second direction for aligning the spring reset mechanism with the protruding portion of the spring on the outer strap

In vivo dosimetry in radio-surgery using MOSFET and micro MOSFET

International Nuclear Information System (INIS)

Sors, Aurelie

2010-01-01

The author reports a study which aimed at assessing MOSFETs and micro-MOSFETs as in vivo surface dosimeters in 6 MV radio-surgery fixed beams for minimum field sizes of 6 x 6 square millimetres. The developed calibration method is adapted to small beams and MOSFET technology. It allows a reduced number of measurements to perform calibration. Moreover, a new equivalent square formula increases the accuracy of the determination of the actual dose delivered in small beams. Obtained results show that MOSFETs and micro-MOSFETs can be used as in vivo dosimeters when located at the surface

Clinical dosimetry using mosfets

International Nuclear Information System (INIS)

Ramani, Ramaseshan; Russell, Stephen; O'Brien, Peter

1997-01-01

Purpose: The use of metal oxide-silicon field effect transistors (MOSFETs) as clinical dosimeters is demonstrated for a number of patients with targets at different clinical sites. Methods and Materials: Commercially available MOSFETs were characterized for energy response, angular dependency of response, and effect of accumulated dose on sensitivity and some inherent properties of MOSFETs. The doses determined both by thermoluminescence dosimetry (TLD) and MOSFETs in clinical situation were evaluated and compared to expected doses determined by calculation. Results: It was observed that a standard calibration of 0.01 Gy/mV gave MOSFET determined doses which agreed with expected doses to within 5% at the 95% confidence limit for photon beams from 6 to 25 MV and electron beams from 5 to 14 MeV. An energy-dependent variation in response of up to 28% was observed between two orientations of a MOSFET. The MOSFET doses compared very well with the doses estimated by TLDs, and the patients tolerated MOSFETs very well. A standard deviation of 3.9% between expected dose and MOSFET determined dose was observed, while for TLDs the standard deviation was 5.1%. The advantages and disadvantages of using MOSFETs for clinical dosimetry are discussed in detail. Conclusion: It was concluded that MOSFETs can be used as clinical dosimeters and can be a good alternative to TLDs. However, they have limitations under certain clinical situations

21 CFR 868.5560 - Gas mask head strap.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Gas mask head strap. 868.5560 Section 868.5560...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5560 Gas mask head strap. (a) Identification. A gas mask head strap is a device used to hold an anesthetic gas mask in position on a patient's...

STRAP-2, Stress Analysis of Structure with Static Loading by Finite Elements Method. STRAP-D, Stress Analysis of Structure with Time-Dependent Loading by Finite Elements Method

International Nuclear Information System (INIS)

Dearien, J.A.; Uldrich, E.D.

1975-01-01

1 - Description of problem or function: The code STRAP (Structural Analysis Package) was developed to analyze the response of structural systems to static and dynamic loading conditions. STRAP-S solves for the displacements and member forces of structural systems under static loads and temperature gradients. STRAP-D will solve numerically a given structural dynamics problem. 2 - Method of solution: STRAP-S generates the stiffness matrix of a structure by the finite element method and solves the resulting equations for structural displacements and member forces. STRAP-D generates the stiffness matrix, solves for eigenvalues and eigenvectors, uncouples and solves the series of second-order ordinary differential equations, and then calculates and plots the requested member forces. 3 - Restrictions on the complexity of the problem: STRAP-S maxima: 250 degrees of freedom, 100 members; STRAP-D maxima: 100 degrees of freedom, 80 time-steps in the forcing function input

Materials, Designs and Standards Used in Ski-Boots for Alpine Skiing

Directory of Open Access Journals (Sweden)

Matteo Moncalero

2013-10-01

Full Text Available This review article reports the recent advances in the study, design and production of ski-boots for alpine skiing. An overview of the different designs and the materials used in ski-boot construction is provided giving particular emphasis to the effect of these parameters on the final performances and on the prevention of injuries. The use of specific materials for ski-boots dedicated to different disciplines (race skiing, mogul skiing, ski-mountaineering etc. has been correlated with the chemical and physical properties of the polymeric materials employed. A review of the scientific literature and the most interesting patents is also presented, correlating the results reported with the performances and industrial production of ski-boots. Suggestions for new studies and the use of advanced materials are also provided. A final section dedicated to the standards involved in ski-boot design completes this review article.

C-STrap Sample Preparation Method--In-Situ Cysteinyl Peptide Capture for Bottom-Up Proteomics Analysis in the STrap Format.

Science.gov (United States)

Zougman, Alexandre; Banks, Rosamonde E

2015-01-01

Recently we introduced the concept of Suspension Trapping (STrap) for bottom-up proteomics sample processing that is based upon SDS-mediated protein extraction, swift detergent removal and rapid reactor-type protein digestion in a quartz depth filter trap. As the depth filter surface is made of silica, it is readily modifiable with various functional groups using the silane coupling chemistries. Thus, during the digest, peptides possessing specific features could be targeted for enrichment by the functionalized depth filter material while non-targeted peptides could be collected as an unbound distinct fraction after the digest. In the example presented here the quartz depth filter surface is functionalized with the pyridyldithiol group therefore enabling reversible in-situ capture of the cysteine-containing peptides generated during the STrap-based digest. The described C-STrap method retains all advantages of the original STrap methodology and provides robust foundation for the conception of the targeted in-situ peptide fractionation in the STrap format for bottom-up proteomics. The presented data support the method's use in qualitative and semi-quantitative proteomics experiments.

Mars Science Laboratory Flight Software Boot Robustness Testing Project Report

Science.gov (United States)

Roth, Brian

2011-01-01

On the surface of Mars, the Mars Science Laboratory will boot up its flight computers every morning, having charged the batteries through the night. This boot process is complicated, critical, and affected by numerous hardware states that can be difficult to test. The hardware test beds do not facilitate testing a long duration of back-to-back unmanned automated tests, and although the software simulation has provided the necessary functionality and fidelity for this boot testing, there has not been support for the full flexibility necessary for this task. Therefore to perform this testing a framework has been build around the software simulation that supports running automated tests loading a variety of starting configurations for software and hardware states. This implementation has been tested against the nominal cases to validate the methodology, and support for configuring off-nominal cases is ongoing. The implication of this testing is that the introduction of input configurations that have yet proved difficult to test may reveal boot scenarios worth higher fidelity investigation, and in other cases increase confidence in the robustness of the flight software boot process.

Real-Time Strap Pressure Sensor System for Powered Exoskeletons

Directory of Open Access Journals (Sweden)

Jesús Tamez-Duque

2015-02-01

Full Text Available Assistive and rehabilitative powered exoskeletons for spinal cord injury (SCI and stroke subjects have recently reached the clinic. Proper tension and joint alignment are critical to ensuring safety. Challenges still exist in adjustment and fitting, with most current systems depending on personnel experience for appropriate individual fastening. Paraplegia and tetraplegia patients using these devices have impaired sensation and cannot signal if straps are uncomfortable or painful. Excessive pressure and blood-flow restriction can lead to skin ulcers, necrotic tissue and infections. Tension must be just enough to prevent slipping and maintain posture. Research in pressure dynamics is extensive for wheelchairs and mattresses, but little research has been done on exoskeleton straps. We present a system to monitor pressure exerted by physical human-machine interfaces and provide data about levels of skin/body pressure in fastening straps. The system consists of sensing arrays, signal processing hardware with wireless transmission, and an interactive GUI. For validation, a lower-body powered exoskeleton carrying the full weight of users was used. Experimental trials were conducted with one SCI and one able-bodied subject. The system can help prevent skin injuries related to excessive pressure in mobility-impaired patients using powered exoskeletons, supporting functionality, independence and better overall quality of life.

KISS for STRAP: user extensions for a protein alignment editor.

Science.gov (United States)

Gille, Christoph; Lorenzen, Stephan; Michalsky, Elke; Frömmel, Cornelius

2003-12-12

The Structural Alignment Program STRAP is a comfortable comprehensive editor and analyzing tool for protein alignments. A wide range of functions related to protein sequences and protein structures are accessible with an intuitive graphical interface. Recent features include mapping of mutations and polymorphisms onto structures and production of high quality figures for publication. Here we address the general problem of multi-purpose program packages to keep up with the rapid development of bioinformatical methods and the demand for specific program functions. STRAP was remade implementing a novel design which aims at Keeping Interfaces in STRAP Simple (KISS). KISS renders STRAP extendable to bio-scientists as well as to bio-informaticians. Scientists with basic computer skills are capable of implementing statistical methods or embedding existing bioinformatical tools in STRAP themselves. For bio-informaticians STRAP may serve as an environment for rapid prototyping and testing of complex algorithms such as automatic alignment algorithms or phylogenetic methods. Further, STRAP can be applied as an interactive web applet to present data related to a particular protein family and as a teaching tool. JAVA-1.4 or higher. http://www.charite.de/bioinf/strap/

Silicon Power MOSFETs

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan; Campola, Michael; Ladbury, Raymond; Label, Kenneth; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

Emergency Medicine Residency Boot Camp Curriculum: A Pilot Study

Directory of Open Access Journals (Sweden)

Ataya, Ramsey

2015-03-01

Full Text Available Introduction: Establishing a boot camp curriculum is pertinent for emergency medicine (EM residents in order to develop proficiency in a large scope of procedures and leadership skills.  In this article, we describe our program’s EM boot camp curriculum as well as measure the confidence levels of resident physicians through a pre- and post-boot camp survey. Methods: We designed a one-month boot camp curriculum with the intention of improving the confidence, procedural performance, leadership, communication and resource management of EM interns. Our curriculum consisted of 12 hours of initial training and culminated in a two-day boot camp. The initial day consisted of clinical skill training and the second day included code drill scenarios followed by interprofessional debriefing.   Results: Twelve EM interns entered residency with an overall confidence score of 3.2 (1-5 scale across all surveyed skills. Interns reported the highest pre-survey confidence scores in suturing (4.3 and genitourinary exams (3.9. The lowest pre-survey confidence score was in thoracostomy (2.4. Following the capstone experience, overall confidence scores increased to 4.0. Confidence increased the most in defibrillation and thoracostomy. Additionally, all interns reported post-survey confidence scores of at least 3.0 in all skills, representing an internal anchor of “moderately confident/need guidance at times to perform procedure.” Conclusion: At the completion of the boot camp curriculum, EM interns had improvement in self-reported confidence across all surveyed skills and procedures. The described EM boot camp curriculum was effective, feasible and provided a foundation to our trainees during their first month of residency. [West J Emerg Med. 2015;16(2:356–361.

Prominent string of galaxies in Bootes: evidence for a Lagrangian singularity

Energy Technology Data Exchange (ETDEWEB)

Tago, E; Einasto, J; Saar, E

1986-01-15

An outstanding string of galaxies and of small groups in Bootes has been found during a study of bridges between the Coma and the Local superclusters. It lies on the boundary of a large void between the Hercules and the Local superclusters, has a length of 50 Mpc, is only a few megaparsecs wide and consists of non-elliptical galaxies. A possible explanation by a specific Lagrangian singularity at the formation, the imprint of which has survived in the present galaxy distribution, is proposed. (author).

Nuclear fuel grid outer strap

International Nuclear Information System (INIS)

Duncan, R.; Craver, J.E.

1989-01-01

This patent describes a nuclear reactor fuel assembly grid. It comprises a first outer grip strap segment end. The first end having a first tab arranged in substantially the same plane as the plane defined by the first end; a second outer grip strap end. The second end having a second slot arranged in substantially the same plane as the plane defined by the second end, with the tab being substantially disposed in the slot, defining a socket therebetween; and a fort tine interposed substantially perpendicularly in the socket

Power Consumption of a MOSFET

Directory of Open Access Journals (Sweden)

Frederick Selkey

2010-01-01

Full Text Available A MOSFET is defined as metal oxide semiconductor field effect transistor. These electrical components are combined or integrated to form control and logic functions for laptop and desktop computers, power controls in printing devices, motor controls and are used in many other electrical circuits. All electrical devices consume electrical power based on current and voltage. For this paper we calculated the power consumption of a Toshiba 2SK3563 MOSFET during its triode mode by finding the area under the current-voltage characteristic curve.

MOSFET dosimetry: temperature effects in-vivo

International Nuclear Information System (INIS)

Yu, P.K.N.; Cheung, T.; Butson, M.J.; Cancer Services, Wollongong, NSW

2004-01-01

Full text: This note investigates temperature effects on dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg C up to 40 deg C. Thus standard irradiations performed at room temperature can be directly compared to in-vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependant on the dose history of the MOSFET dosimeter. However the variation can be accounted for in the measurement method. For accurate dosimetry the detector should be placed for approximately 60 seconds on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 seconds after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

High performance germanium MOSFETs

International Nuclear Information System (INIS)

Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas; Kim, Donghyun; Nayfeh, Ammar; Pethe, Abhijit

2006-01-01

Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO x N y ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin (∼2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices

High performance germanium MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Saraswat, Krishna [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)]. E-mail: saraswat@stanford.edu; Chui, Chi On [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Krishnamohan, Tejas [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Kim, Donghyun [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Nayfeh, Ammar [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Pethe, Abhijit [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

2006-12-15

Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO {sub x}N {sub y} ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin ({approx}2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices.

Improvement of Mosfet Characteristics

OpenAIRE

Ranbir Singh

1990-01-01

By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circuit models are developed. Also, the high frequency behaviour is explained by a model and the behaviour of a T-MOSFET under different conditions is given.

Are underground coal miners satisfied with their work boots?

Science.gov (United States)

Dobson, Jessica A; Riddiford-Harland, Diane L; Bell, Alison F; Steele, Julie R

2018-01-01

Dissatisfaction with work boot design is common in the mining industry. Many underground coal miners believe their work boots contribute to the high incidence of lower limb injuries they experience. Despite this, the most recent research to examine underground coal mining work boot satisfaction was conducted over a decade ago. This present study aimed to address this gap in the literature by assessing current mining work boot satisfaction in relation to the work-related requirements for underground coal mining. 358 underground coal miners (355 men; mean age = 39.1 ± 10.7 years) completed a 54-question survey regarding their job details, work footwear habits, foot problems, lower limb and lower back pain history, and work footwear fit and comfort. Results revealed that underground coal miners were not satisfied with their current mining work boots. This was evident in the high incidence of reported foot problems (55.3%), lower back pain (44.5%), knee pain (21.5%), ankle pain (24.9%) and foot pain (42.3%). Over half of the underground coal miners surveyed believed their work boots contributed to their lower limb pain and reported their work boots were uncomfortable. Different working roles and environments resulted in differences in the incidence of foot problems, lower limb pain and comfort scores, confirming that one boot design cannot meet all the work-related requirements of underground coal mining. Further research examining the interaction of a variety of boot designs across the different underground surfaces and the different tasks miners perform is paramount to identify key boot design features that affect the way underground coal miners perform. Enhanced work boot design could improve worker comfort and productivity by reducing the high rates of reported foot problems and pain amongst underground coal miners. Copyright © 2017 Elsevier Ltd. All rights reserved.

Automated System Tests High-Power MOSFET's

Science.gov (United States)

Huston, Steven W.; Wendt, Isabel O.

1994-01-01

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Soft-switching PWM full-bridge converters topologies, control, and design

CERN Document Server

Ruan, Xinbo

2014-01-01

Soft-switching PWM full-bridge converters have been widely used in medium-to-high power dc-dc conversions for topological simplicity, easy control and high efficiency. Early works on soft-switching PWM full-bridge converter by many researchers included various topologies and modulation strategies.  However, these works were scattered, and the relationship among these topologies and modulation strategies had not been revealed. This book intends to describe systematically the soft-switching techniques for pulse-width modulation (PWM) full-bridge converters, including the topologies, control and

Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

DEFF Research Database (Denmark)

Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

2017-01-01

In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si ...... the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short....

Research on Linux Trusted Boot Method Based on Reverse Integrity Verification

Directory of Open Access Journals (Sweden)

Chenlin Huang

2016-01-01

Full Text Available Trusted computing aims to build a trusted computing environment for information systems with the help of secure hardware TPM, which has been proved to be an effective way against network security threats. However, the TPM chips are not yet widely deployed in most computing devices so far, thus limiting the applied scope of trusted computing technology. To solve the problem of lacking trusted hardware in existing computing platform, an alternative security hardware USBKey is introduced in this paper to simulate the basic functions of TPM and a new reverse USBKey-based integrity verification model is proposed to implement the reverse integrity verification of the operating system boot process, which can achieve the effect of trusted boot of the operating system in end systems without TPMs. A Linux operating system booting method based on reverse integrity verification is designed and implemented in this paper, with which the integrity of data and executable files in the operating system are verified and protected during the trusted boot process phase by phase. It implements the trusted boot of operation system without TPM and supports remote attestation of the platform. Enhanced by our method, the flexibility of the trusted computing technology is greatly improved and it is possible for trusted computing to be applied in large-scale computing environment.

[Influence of ski boots on balance performance].

Science.gov (United States)

Mildner, E; Lembert, S; Raschner, C

2010-03-01

Modern ski carving technique demands that skiers have a strong sense of balance and edge their skis with precision and feeling. Stiff ski boots facilitate the transfer of power to the ski but increase the difficulty of balancing. The aim of this study was to analyse the influence of ski boots on balance performance of alpine skiers. 76 experienced skiers (female 33/male 43) and 76 ski racers of the Skigymnasium Stams (female 31/male 45) were tested on the MFT S 3 Check with and without ski boots. Ski boots significantly influenced balance. There were also significant differences between experienced skiers and ski racers, but gender differences were minimal. In addition to general conditioning, skiers should utilise general and ski-specific balance and sensomotor training which could help in ski injury prevention, especially knee injuries. Georg Thieme Verlag KG Stuttgart, New York.

Performance of a compact four-strap fast wave antenna

International Nuclear Information System (INIS)

Wukitch, S.J.

2002-01-01

Ion cyclotron range of frequency (ICRF) is expected to be a primary auxiliary heating source in future experiments and fusion reactors. Compact antennas with high power density able to withstand large disruption forces present significant challenges to ICRF antenna design. A compact four-strap antenna has been installed in Alcator C-Mod and its performance has been compared with a pair of two-strap antennas. The key design features are the long vacuum strip line feeds, folded current strap configuration, use of ceramic insulators in the Faraday screen, and open Faraday screen. The heating efficiency and impurity generation are nearly identical to the other antennas while the loading is ∼2.5 higher. The power handling of the antenna was limited by arcing at relatively low maximum voltage. The strip line and antenna strap had arc damage localized to regions where the RF E-field was parallel to the tokamak B-field. For E parallel B, the breakdown voltage was determined to be ∼15 kV/cm. Redesign of the strip line has resulted in an increase in the maximum voltage from 17 kV to 25 kV. Finally, the current strap is being modified to increase the maximum voltage to ∼35 kV. (author)

INITIAL FOLLOW-UP OF OPTICAL TRANSIENTS WITH COLORES USING THE BOOTES NETWORK

Directory of Open Access Journals (Sweden)

Maria D. Caballero-Garcia

2015-04-01

Full Text Available The Burst Observer and Optical Transient Exploring System (BOOTES is a network of telescopes that allows the continuous monitoring of transient astrophysical sources. It was originally devoted to the study of the optical emissions from gamma-raybursts (GRBs that occur in the Universe. In this paper we show the initial results obtained using the spectrograph COLORES (mounted on BOOTES-2, when observing optical transients (OTs of a diverse nature.

Military boot attenuates axial loading to the lower leg.

Science.gov (United States)

Yoganandan, Narayan; Schlick, Michael; Arun, Mike W J; Pintar, Frank A

2014-01-01

Biomechanical tests to understand injury mechanisms and derive injury tolerance information using Post-Mortem Human Subjects (PMHS) have not used foot protection and they have primarily focused on civilian environments such as automotive and athletic- and sports-related events. As military personnel use boots, tests with the boot are required to understand their effect on attenuating lower leg loads. The purpose of this study was therefore, to determine the modulation of human lower leg kinematics with boot compressions and share of the force absorbed by the boot from underbody blast loading. Axial impacts were delivered to the Hybrid III dummy lower leg in the neutral position. The dummy leg was instrumented with its internal upper and lower tibia load cells, and in addition, a knee load cell was attached to the proximal end. Tests were conducted at 4.4 to 8.9 m/s, with and without boots, and repeat tests were done. Morphologies of the force-time responses were similar at the three load cell locations and for all input combinations and booted and unbooted conditions. However, booted tests resulted in considerably lower maximum forces (approximately two-third reduction) than unbooted tests. These results clearly show that boots can absorb a considerable share of the impact energy and decrease impact loads transmitted to the lower leg under vertical loading, thus necessitating the generation of tolerance data using PMHS for this environment.

EFFECTIVENESS OF NYLON DRAG STRAPS FOR BRAKING MONORAIL SLEDS.

Science.gov (United States)

Velocity versus coast distance measurements on two monorail rocket sleds were conducted on the Holloman track to obtain numerical information on the...sleds and the drag straps. The straps as described are shown to increase the effective drag area of the monorail sleds used by approximately one square

Advances in Pediatric Cardiology Boot Camp: Boot Camp Training Promotes Fellowship Readiness and Enables Retention of Knowledge.

Science.gov (United States)

Ceresnak, Scott R; Axelrod, David M; Sacks, Loren D; Motonaga, Kara S; Johnson, Emily R; Krawczeski, Catherine D

2017-03-01

We previously demonstrated that a pediatric cardiology boot camp can improve knowledge acquisition and decrease anxiety for trainees. We sought to determine if boot camp participants entered fellowship with a knowledge advantage over fellows who did not attend and if there was moderate-term retention of that knowledge. A 2-day training program was provided for incoming pediatric cardiology fellows from eight fellowship programs in April 2016. Hands-on, immersive experiences and simulations were provided in all major areas of pediatric cardiology. Knowledge-based examinations were completed by each participant prior to boot camp (PRE), immediately post-training (POST), and prior to the start of fellowship in June 2016 (F/U). A control group of fellows who did not attend boot camp also completed an examination prior to fellowship (CTRL). Comparisons of scores were made for individual participants and between participants and controls. A total of 16 participants and 16 control subjects were included. Baseline exam scores were similar between participants and controls (PRE 47 ± 11% vs. CTRL 52 ± 10%; p = 0.22). Participants' knowledge improved with boot camp training (PRE 47 ± 11% vs. POST 70 ± 8%; p cardiology knowledge after the training program and had excellent moderate-term retention of that knowledge. Participants began fellowship with a larger fund of knowledge than those fellows who did not attend.

Driver Circuit For High-Power MOSFET's

Science.gov (United States)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Submicron Silicon MOSFET

Science.gov (United States)

Daud, T.

1986-01-01

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

MOSFET dosimetry on modern radiation oncology modalities

International Nuclear Information System (INIS)

Rosenfeld, A.B.

2002-01-01

The development of MOSFET dosimetry is presented with an emphasis on the development of a scanning MOSFET dosimetry system for modern radiation oncology modalities. Fundamental aspects of MOSFETs in relation to their use as dosemeters are briefly discussed. The performance of MOSFET dosemeters in conformal radiotherapy, hadron therapy, intensity-modulated radiotherapy and microbeam radiation therapy is compared with other dosimetric techniques. In particular the application of MOSFET dosemeters in the characterisation and quality assurance of the steep dose gradients associated with the penumbra of some modern radiation oncology modalities is investigated. A new in vivo, on-line, scanning MOSFET read out system is also presented. The system has the ability to read out multiple MOSFET dosemeters with excellent spatial resolution and temperature stability and minimal slow border trapping effects. (author)

Monte carlo study of MOSFET packaging, optimised for improved energy response: single MOSFET filtration.

Science.gov (United States)

Othman, M A R; Cutajar, D L; Hardcastle, N; Guatelli, S; Rosenfeld, A B

2010-09-01

Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (D(w)(0.07)) and 10 mm (D(w)(10)) in a water equivalent phantom of size 30 x 30 x 30 cm(3) for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within + or - 60 % for photon energies 0.06-2 MeV for both D(w)(0.07) and D(w)(10). Variations in the response for photon energies of 15-60 keV were 200 and 330 % for D(w)(0.07) and D(w)(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700 % over-response when used in free-air geometry.

Harmful cleats of football boots: a biomechanical evaluation.

Science.gov (United States)

Bentley, J A; Ramanathan, A K; Arnold, G P; Wang, W; Abboud, R J

2011-09-01

Football players wear boots of varying cleat designs with some preferring the bladed cleats while others opting for the conventional studded cleats. The current study compares biomechanically the boots with differing cleat designs and their effect on feet, if any. Twenty-nine healthy male volunteers were recruited from amateur football teams. They were asked to perform three trials each of two activities: a straight run and a run cutting at a 60° angle wearing bladed and studded Adidas®-F series boots on artificial turf. Plantar pressure values were recorded using the Pedar®-X in-shoe pressure measuring device. Peak pressure and pressure-time integral were analysed over 11 clinically relevant areas under the foot. While the in-shoe pressure and pressure-time integral were higher under the medial half of the foot with studded boots, they were higher under the lateral half of the foot with the bladed design. The studded boots can be considered safer as the pressure distribution across the foot and the pattern of centre of pressure progression mimicked the normal motif, whereas the bladed boots could potentially be deemed relatively more harmful due to the unnatural increased loading under the lateral half of the foot, predisposing the foot to injuries. Copyright © 2010 European Foot and Ankle Society. Published by Elsevier Ltd. All rights reserved.

MOSFET's for Cryogenic Amplifiers

Science.gov (United States)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

An Innovative Clinical Skills “Boot Camp” for Dental Medicine Residents

Directory of Open Access Journals (Sweden)

Jenny Castillo

2017-05-01

Full Text Available During a 1-year hospital-based residency, dental residents are required to rotate through many departments including surgery, medicine, and emergency medicine. It became apparent that there was a gap between clinical skills knowledge taught in dental school curriculum and skills required for hospital-based patient care. In response, a simulation-based intensive clinical skill “boot camp” was created. The boot camp provided an intensive, interactive 3-day session for the dental residents. During the 3 days, residents were introduced to medical knowledge and skills that were necessary for their inpatient hospital rotations but were lacking in traditional dental school curriculum. Effectiveness of the boot camp was assessed in terms of knowledge base and comfort through presession and postsession surveys. According to resident feedback, this intensive introduction for the dental residents improved their readiness for their inpatient hospital-based residency.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

Science.gov (United States)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Superficial x-ray in-vivo dosimetry with MOSFET detectors

International Nuclear Information System (INIS)

Cheung, T.; Yu, P.K.N.; Butson, M.J.; Cancer Services, Wollongong, NSW

2004-01-01

Full text: This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patient's treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within ± 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being ± 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia.

Science.gov (United States)

Mattar, Essam H; Hammad, Lina F; Al-Mohammed, Huda I

2011-07-01

Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. The measurements involved 32 patient's (16 males, 16 females), aged between 14-30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment.

Optimum topology design for the concentrated force diffusion structure of strap-on launch vehicle

Directory of Open Access Journals (Sweden)

Mei Yong

2017-01-01

Full Text Available The thrust from the booster of strap-on launch vehicle is transmitted to the core via the strap-on linkage device, so the reinforced structure to diffusion the concentrated force should be employed in the installation site of this device. To improve the bearing-force characteristics of the concentrated force diffusion structure in strap-on linkage section and realize the lightweight design requirements, topology optimization under multiple load cases is conducted for the concentrated force diffusion structure in this study. The optimal configuration finally obtained can achieve 17.7% reduction in total weight of the structure. Meanwhile, results of strength analysis under standard load cases show the stress level of this design scheme of the concentrated force diffusion structure meet design requirements and the proposed topology optimization method is suitable for the design of the concentrated force diffusion structure in concept design phase.

A Decade of GRB Follow-Up by BOOTES in Spain (2003–2013

Directory of Open Access Journals (Sweden)

Martin Jelínek

2016-01-01

Full Text Available This article covers ten years of GRB follow-ups by the Spanish BOOTES stations: 71 follow-ups providing 23 detections. Follow-ups by BOOTES-1B from 2005 to 2008 were given in a previous article and are here reviewed and updated, and additional detection data points are included as the former article merely stated their existence. The all-sky cameras CASSANDRA have not yet detected any GRB optical afterglows, but limits are reported where available.

Economic Analysis for Commingling Effects of Insect Activity in the Elevator Boot Area.

Science.gov (United States)

Tilley, Dennis R; Casada, Mark E; Langemeier, Michael R; Subramanyam, Bhadriraju; Arthur, Frank H

2015-12-01

Boot areas in commercial grain elevators and feed mills contribute to commingling of insects with grain that moves through the elevator leg. A partial budget and stochastic dominance model were developed to improve pest management decision-making and risk analysis assessment from commingling effects of insect activity in the boot area. Modified pilot-scale bucket elevator legs, containing residual wheat or corn, were infested with varying insect pest densities prior to clean grain transfers. Appropriate grain discounts were applied to grain samples obtained from clean grain transfers over either: 1) insect-free and untreated boots, 2) infested and untreated boots, or 3) infested and chemical-treated (β-cyfluthrin) boots. The insect-free boots simulated performing clean-out of the boot area. Partial budget analysis and stochastic dominance modeling indicated that boot sanitation (cleanout) about every 30 d, avoiding costly grain discounts from insect commingling, is the preferred choice. Although chemical spray treatments of the empty boot may reduce insect populations of some boot residual grains, boot cleanout always had lower and usually zero insect pest populations in the boot residual grain, providing higher facility operational net income without the use of chemicals. Published by Oxford University Press on behalf of Entomological Society of America 2015. This work is written by US Government employees and is in the public domain in the US.

Grid lattice with sliding strap

International Nuclear Information System (INIS)

Jabsen, F.S.

1977-01-01

The invention provides means for inserting tubular members into a grid structure without mutual contact between the tubular members. After the tubular members are inserted, a movable strap is slid into position, thereby engaging, locating, and supporting the tubular member in a fixed location. (Auth.)

Hiking strap force decreases during sustained upwind sailing

DEFF Research Database (Denmark)

Buchardt, R; Bay, Jonathan; Bojsen-Møller, Jens

2017-01-01

The hypothesis, that sailing upwind in wind speeds above 12 knots causes fatigue, which manifests as a reduction in exerted hiking strap force and/or maximal isometric voluntary contraction force (MVC) of the knee extensors, was evaluated. Additionally, it was investigated if a relationship exists...... between maximal exerted hiking force (hMVC) and sailing performance. In part 1 of the study, 12 national level athletes sailed upwind for 2 × 10 min while hiking strap forces were continuously acquired. Before, in between and after sailing periods, the MVC of the knee extensors was measured. In part 2...... of the study, hMVC was measured dry land in a hiking bench and correlated with the overall results at a national championship. Hiking strap force decreased from the first to the last minute in both 10 min sailing periods (430 ± 131 vs. 285 ± 130 N, P 

Ski jumping boots limit effective take-off in ski jumping.

Science.gov (United States)

Virmavirta, M; Komi, P V

2001-12-01

In this study, we measured the vertical and horizontal take-off forces, plantar pressures and activation patterns of four muscles (vastus lateralis, gluteus maximus, tibialis anterior, gastrocnemius) in 10 ski jumpers in simulated laboratory conditions when wearing either training shoes or ski jumping boots. We found significant differences in vertical (P boots condition resulted in a smaller displacement in the final position of the following joint angles: ankle angle (P knee angle (P boots condition, significantly more pressure was recorded under the heel (P knee and hip extensors when wearing jumping boots. We conclude that the stiffness of the structure of the jumping boots may result in a forward shift of pressure, thus limiting the effective vertical force. To avoid this pressure shift, the pattern of movement of simulated take-offs should be carefully controlled, particularly when wearing training shoes.

MOSFET detectors in quality assurance of tomotherapy treatments.

Science.gov (United States)

Cherpak, Amanda; Studinski, Ryan C N; Cygler, Joanna E

2008-02-01

The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6 MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs

Real Time In-circuit Condition Monitoring of MOSFET in Power Converters

Directory of Open Access Journals (Sweden)

Shakeb A. Khan

2015-03-01

Full Text Available Abstract:This paper presents simple and low-cost, real time in-circuit condition monitoring of MOSFET in power electronic converters. Design metrics requirements like low cost, small size, high power factor, low percentage of total harmonic distortion etc. requires the power electronic systems to operate at high frequencies and at high power density. Failures of power converters are attributed largely by aging of power MOSFETs at high switching frequencies. Therefore, real time in-circuit prognostic of MOSFET needs to be done before their selection for power system design. Accelerated aging tests are performed in different circuits to determine the wear out failure of critical components based on their parametric degradation. In this paper, the simple and low-cost test beds are designed for real time in-circuit prognostics of power MOSFETs. The proposed condition monitoring scheme helps in estimating the condition of MOSFETs at their maximum rated operating condition and will aid the system designers to test their reliability and benchmark them before selecting in power converters.

Lightning Pin Injection Testing on MOSFETS

Science.gov (United States)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

Application of MOSFET radiation detector for patient dosimetry

International Nuclear Information System (INIS)

Soubra, M.; Cygler, J.; Szanto, J.

1996-01-01

Purpose: A new direct reading Metal Oxide-Silicon Field Effect Transistor (MOSFET) based radiation detector system has been investigated in a variety of clinical radiotherapy procedures. The aim of this study is to report on the clinical applicability of such a device, its ease of use and on its dosimetric properties that include precision angular and energy dependence. Comparisons of patient dose measurements obtained by the MOSFET based system and the commonly used thermoluminescence dosimeters (TLD) and diodes are discussed. Material and Methods: A commercially available MOSFET dosimetry system that employs dual MOSFET dual bias arrangements has been used in this study. The detector is bonded with the epoxy to the end of a long (1.5 m) flexible cable whose other end is connected to a bias supply box operated by a battery. The bias box can accommodate up to 5 MOSFETs and after radiation exposure the dose can be determined by connecting the detectors to a pre calibrated reader. For the clinical evaluation 5 MOSFETs were used on patients undergoing total body irradiation (TBI) and high dose rate brachytherapy (HDR). The MOSFET detectors were taped to patient surface adjacent to the routinely used TLDs and/or diodes. To examine energy dependence the MOSFET sensitivity (mV/Gy) was determined in relation to a calibrated dose from 6 and 18 MV photon beams. The directional dependence was investigated by placing a MOSFET during irradiation in a special polystyrene insert that can be manually rotated to the required angle. Precision (reproducibility) measurements were made by exposing MOSFETs to multiple fractions of dose in the range of 3 x 10 -2 to 2 Gy. Results: In 3 of TBI trials the diodes measured average dose was within 1.0% of the prescribed dose compared to 3.7% for TLDs and 1.8% for MOSFETs. The MOSFETs average sensitivity for 6 MV was within 2% of the 18 MV photon beam. The reproducibility of MOSFET response was better than 3 % provided the dose per fraction is

p-MOSFET total dose dosimeter

Science.gov (United States)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

BOOTES-IR: near IR follow-up GRB observations by a robotic system

International Nuclear Information System (INIS)

Castro-Tirado, A.J.; Postrigo, A. de Ugarte; Jelinek, M.

2005-01-01

BOOTES-IR is the extension of the BOOTES experiment, which operates in Southern Spain since 1998, to the near IR (NIR). The goal is to follow up the early stage of the gamma ray burst (GRB) afterglow emission in the NIR, alike BOOTES does already at optical wavelengths. The scientific case that drives the BOOTES-IR performance is the study of GRBs with the support of spacecraft like INTEGRAL, SWIFT and GLAST. Given that the afterglow emission in both, the NIR and the optical, in the instances immediately following a GRB, is extremely bright (reached V = 8.9 in one case), it should be possible to detect this prompt emission at NIR wavelengths too. The combined observations by BOOTES-IR and BOOTES-1 and BOOTES-2 will allow for real time identification of trustworthy candidates to have a high redshift (z > 5). It is expected that, few minutes after a GRB, the IR magnitudes be H ∼ 7-10, hence very high quality spectra can be obtained for objects as far as z = 10 by larger instruments

Energy Harvesting Combat Boot for Satellite Positioning

Directory of Open Access Journals (Sweden)

Haluk Akay

2018-05-01

Full Text Available Most portable electronic devices are power-limited by battery capacity, and recharging these batteries often interrupts the user’s experience with the device. The product presented in this paper provides an alternative to powering portables by converting regular human walking motion to electricity. The device harvests electric power using air bulbs, distributed in the sole of a shoe to drive a series of micro-turbines connected to small DC motors. The number and position of air bulbs is optimized to harvest the maximum airflow from each foot-strike. The system is designed to continuously drive the micro-turbines by utilizing both outflow and inflow from the air bulbs. A prototype combat boot was fitted on the right foot of a 75 kg test subject, and produced an average continuous power on the order of 10 s of mW over a 22 Ω load during walking at 3.0 mph. This combat boot provides enough electric power to a passive GPS tracker that periodically relays geographical coordinates to a smartphone via satellite without battery replacement.

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

International Nuclear Information System (INIS)

Gang, Du; Xiao-Yan, Liu; Zhi-Liang, Xia; Jing-Feng, Yang; Ru-Qi, Han

2010-01-01

Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Research of shot noise based on realistic nano-MOSFETs

Directory of Open Access Journals (Sweden)

Xiaofei Jia

2017-05-01

Full Text Available Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.

Does the Powers™ strap influence the lower limb biomechanics during running?

Science.gov (United States)

Greuel, Henrike; Herrington, Lee; Liu, Anmin; Jones, Richard K

2017-09-01

Previous research has reported a prevalence of running related injuries in 25.9% to 72% of all runners. A greater hip internal rotation and adduction during the stance phase in running has been associated with many running related injuries, such as patellofemoral pain. Researchers in the USA designed a treatment device 'the Powers™ strap' to facilitate an external rotation of the femur and to thereby control abnormal hip and knee motion during leisure and sport activities. However, to date no literature exists to demonstrate whether the Powers™ strap is able to reduce hip internal rotation during running. 22 healthy participants, 11 males and 11 females (age: 27.45±4.43 years, height: 1.73±0.06m, mass: 66.77±9.24kg) were asked to run on a 22m track under two conditions: without and with the Powers™ strap. Three-dimensional motion analysis was conducted using ten Qualisys OQUS 7 cameras (Qualisys AB, Sweden) and force data was captured with three AMTI force plates (BP600900, Advanced Mechanical Technology, Inc.USA). Paired sample t-tests were performed at the 95% confidence interval on all lower limb kinematic and kinetic data. The Powers™ strap significantly reduced hip and knee internal rotation throughout the stance phase of running. These results showed that the Powers™ strap has the potential to influence hip motion during running related activities, in doing so this might be beneficial for patients with lower limb injuries. Future research should investigate the influence of the Powers™ strap in subjects who suffer from running related injuries, such as patellofemoral pain. Copyright © 2017 Elsevier B.V. All rights reserved.

Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification.

3D gait analysis with and without an orthopedic walking boot.

Science.gov (United States)

Gulgin, H; Hall, K; Luzadre, A; Kayfish, E

2018-01-01

Orthopedic walking boots have been widely used in place of traditional fiberglass casts for a variety of orthopedic injuries and post-surgical interventions. These walking boots create a leg length discrepancy (LLD). LLD has been shown to alter the kinematics and kinetics of gait and are associated with lumbar and lower limb conditions such as: foot over pronation, low back pain, scoliosis, and osteoarthritis of the hip and knee joints. Past gait analyses research with orthopedic boots is limited to findings on the ipsilateral limb. Thus, the purpose of the study was to examine bilateral gait kinematics & kinetics with and without a walking boot. Forty healthy participants (m=20, f=20, age 20.7±1.8 yrs., ht. 171.6±9.5cm, wt. 73.2±11.0kg, BMI 24.8±3.2) volunteered. An eight camera Vicon Motion Capture System with PIG model and two AMTI force plates were utilized to record the walking trial conditions: (1) bilateral tennis shoes (2) boot on right foot, tennis shoe on left foot (3) boot on right foot, barefoot on left foot. Data were processed in Nexus 2.2.3 and exported to Visual 3D for analysis. When wearing the boot, there were significant differences in most joint angles and moments, with larger effects on long limb. The walking boot alters the gait in the same way as those with existing LLD, putting them at risk for development of secondary knee, hip, and low back pain during treatment protocol. Copyright © 2017 Elsevier B.V. All rights reserved.

An Influence Study of Hydrogen Evolution Characteristics on the Negative Strap Corrosion of Lead Acid Battery

Directory of Open Access Journals (Sweden)

Zhong Guobin

2015-01-01

Full Text Available Negative strap corrosion is an important reason for the failure of valve regulated lead acid battery. This paper selected the Pb-Sb alloy material and Pb-Sn alloy material, made an investigation on the negative corrosion resistance and hydrogen evolution of these two alloy materials by scanning electron microscope analysis, metallographic analysis, chemical study and linear sweep voltammetry, and discussed the influence of lead alloy hydrogen evolution on the negative strap corrosion. The results showed that the hydrogen evolution reaction rates of the alloys had an impact on the corrosion areas with the maximum thickness of the alloys and the depth of corrosion layers. Greater hydrogen evolution reaction rate can lead to shorter distance between the corrosion area with the maximum thickness and the liquid level; whereas the greater corrosion layer thickness can bring aggravated risk of negative strap corrosion failure.

Preparing for the primary care clinic: an ambulatory boot camp for internal medicine interns

Science.gov (United States)

Esch, Lindsay M.; Bird, Amber-Nicole; Oyler, Julie L.; Lee, Wei Wei; Shah, Sachin D.; Pincavage, Amber T.

2015-01-01

Introduction Internal medicine (IM) interns start continuity clinic with variable ambulatory training. Multiple other specialties have utilized a boot camp style curriculum to improve surgical and procedural skills, but boot camps have not been used to improve interns’ ambulatory knowledge and confidence. The authors implemented and assessed the impact of an intern ambulatory boot camp pilot on primary care knowledge, confidence, and curricular satisfaction. Methods During July 2014, IM interns attended ambulatory boot camp. It included clinically focused case-based didactic sessions on common ambulatory topics as well as orientation to the clinic and electronic medical records. Interns anonymously completed a 15-question pre-test on topics covered in the boot camp as well as an identical post-test after the boot camp. The interns were surveyed regarding their confidence and satisfaction. Results Thirty-eight interns participated in the boot camp. Prior to the boot camp, few interns reported confidence managing common outpatient conditions. The average pre-test knowledge score was 46.3%. The average post-test knowledge score significantly improved to 76.1% (pinterns reported that the boot camp was good preparation for clinics and 97% felt that the boot camp boosted their confidence. Conclusions The ambulatory boot camp pilot improved primary care knowledge, and interns thought it was good preparation for clinic. The ambulatory boot camp was well received and may be an effective way to improve the preparation of interns for primary care clinic. Further assessment of clinical performance and expansion to other programs and specialties should be considered. PMID:26609962

SU-E-T-749: Thorough Calibration of MOSFET Dosimeters

International Nuclear Information System (INIS)

Plenkovich, D; Thomas, J

2015-01-01

Purpose: To improve the accuracy of the MOSFET calibration procedure by performing the measurement several times and calculating the average value of the calibration factor for various photon and electron energies. Methods: The output of three photon and six electron beams of Varian Trilogy linear accelerator SN 5878 was calibrated. Five reinforced standard sensitivity MOSFET dosimeters were placed in the calibration jig and connected to the Reader Module. As the backscatter material was used 7 cm of Virtual Water. The MOSFET dosimeters were covered with 1.5 cm thick bolus for the regular and SRS 6 MV beams, 3 cm bolus for 15 MV beam, 1.5 cm bolus for 6 MeV electron beam, and 2 cm bolus for the electron energies of 9, 12, 15, 18, and 22 MeV. The dosimeters were exposed to 100 MU, and the calibration factor was determined using the mobileMOSFET software. To improve the accuracy of calibration, this procedure was repeated ten times and the calibration factors were averaged. Results: As the number of calibrations was increasing the variability of calibration factors of different dosimeters was decreasing. After ten calibrations, the calibration factors for all five dosimeters were within 1% of one another for all energies, except 6 MV SRS photons and 6 MeV electrons, for which the variability was 2%. Conclusions: The described process results in calibration factors which are almost independent of modality or energy. Once calibrated, the dosimeters may be used for in-vivo dosimetry or for daily verification of the beam output. Measurement of the radiation dose under bolus and scatter to the eye are examples of frequent use of calibrated MOSFET dosimeters. The calibration factor determined for full build-up is used under these circumstances. To the best of our knowledge, such thorough procedure for calibrating MOSFET dosimeters has not been reported previously. Best Medical Canada provided MOSFET dosimeters for this project

Investigation of Short Channel Effect on Vertical Structures in Nanoscale MOSFET

Directory of Open Access Journals (Sweden)

Munawar A. Riyadi

2009-12-01

Full Text Available The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel length (Lch is demonstrated with the help of numerical tools. The evaluation of short channel effect (SCE parameters, i.e. threshold voltage roll-off, subthreshold swing (SS, drain induced barrier lowering (DIBL and leakage current shows the considerable advantages as well as its thread-off in implementing the structure, in particular for nanoscale regime.

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Directory of Open Access Journals (Sweden)

Milić Pejović

2013-01-01

Full Text Available Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of 60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5 V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

Assessment of low absorbed dose with a MOSFET detector

International Nuclear Information System (INIS)

Butson, M.J.; Cancer Services, Wollongong, NSW; Cheung, T.; Yu, P.K.N.

2004-01-01

Full text: The ability of a MOSFET dosimetry system to measure low therapeutic doses has been evaluated for accuracy for high energy x-ray radiotherapy applications. The MOSFET system in high sensitivity mode produces a dose measurement reproducibility of within 10%, 4% and 2.5% for 2 cGy, 5 cGy and 10cGy dose assessment respectively. This is compared to 7%, 4% and 2% for an Attix parallel plate ionisation chamber and 20%, 7% and 3.5% for a Wellhofer IC4 small volume ionisation chamber. Results for our dose standard thimble ionisation chamber and low noise farmer dosemeter were 2%, 0.5% and 0.25% respectively for these measurements. The quoted accuracy of the MOSFET dosimetry system is partially due to the slight non linear dose response (reduced response) with age of the detector but mainly due to the intrinsic variations in measured voltage differential per applied dose. Results have shown that the MOSFET dosimetry system provides an adequate measure of dose at low dose levels and is comparable in accuracy to the Attix parallel plate ionisation chambers for relative dose assessment at levels of 2cGy to 10cGy. The use of the MOSFET dosimeter at low doses can extend the life expectancy of the device and may provide useful information for areas where low dose assessment is required. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

[Ski boots versus the knee joint. 2: What produces the forward leaning position of the ski boot?].

Science.gov (United States)

Schaff, P; Hauser, W

1990-03-01

In contrast to the drop in the incidence of fracture of the lower leg that has been observed in recent years, the incidence of knee injuries has not decreased in skiing. There has even been a relative increase of severe knee lesions and isolated ACL ruptures, prompting us to conduct a comprehensive study of the causes of this phenomena. The goal of part 2 of the study was to comprehensively examine the forward movement in skiboots in the lab and on the slope. Studying nine beginners and eight experts, we found a 20% (sign. 0.05) lower forward-lean capability for the beginner group in the same boot. A randomized study with crossover design conducted on the slope, where we equipped 16 skiers with either soft or stiff boots for the duration of five ski days, revealed the learning behaviour and forward position on the slope depending on the boot. The pupils became definitely less adept at learning if they were required to wear stiff skiboots and showed a sign, lower forward flex angle. A skiiing style in backward lean position was adopted and supported by the fixed backward spoiler. Therefore another study was necessary and will follow (part 3) to examine the effect of a stiff backward spoiler and skiing in a backward lean position. In consideration of the facts known up to now, it is concluded that to improve safety in skiing recommendations must be given as to which boot to choose, according to the skiing level. In addition, the setting of safety bindings must consider the type of skiboot used.

Upgrades to the 4-strap ICRF Antenna in Alcator C-Mod

International Nuclear Information System (INIS)

G. Schilling; J.C. Hosea; J.R. Wilson; W. Beck; R.L. Boivin; P.T. Bonoli; D. Gwinn; W.D. Lee; E. Nelson-Melby; M. Porkolab; R. Vieira; S.J. Wukitch; J.A. Goetz

2001-01-01

A 4-strap ICRF antenna suitable for plasma heating and current drive has been designed and fabricated for the Alcator C-Mod tokamak. Initial operation in plasma was limited by high metallic impurity injection resulting from front surface arcing between protection tiles and from current straps to Faraday shields. Antenna modifications were made in February 2000, resulting in impurity reduction, but low-heating efficiency was observed when the antenna was operated in its 4-strap rather than a 2-strap configuration. Further modifications were made in July 2000, with the installation of BN plasma-facing tiles and radio- frequency bypassing of the antenna backplane edges and ends to reduce potential leakage coupling to plasma surface modes. Good heating efficiency was now observed in both heating configurations, but coupled power was limited to 2.5 MW in H-mode, 3 MW in L-mode, by plasma-wall interactions. Additional modifications were started in February 2001 and will be completed by this meeting. All the above upgrades and their effect on antenna performance will be presented

Design, Manufacturing, and Commissioning of BIRCAM (Bootes InfraRed CAMera

Directory of Open Access Journals (Sweden)

Alberto Riva

2010-01-01

Full Text Available This paper covers the various aspect of design, manufacturing and commissioning of the infrared camera BIRCAM, installed at BOOTES-IR, the 60 cm robotic infrared telescope at Sierra Nevada Observatory (OSN, Granada, Spain. We describe how we achieved a quality astronomical image, moving from the scientific requirements.

High voltage MOSFET switching circuit

Science.gov (United States)

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Large-Signal DG-MOSFET Modelling for RFID Rectification

Directory of Open Access Journals (Sweden)

R. Rodríguez

2016-01-01

Full Text Available This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus. It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs on rectification is also pointed out.

Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams.

Science.gov (United States)

Manigandan, D; Bharanidharan, G; Aruna, P; Devan, K; Elangovan, D; Patil, Vikram; Tamilarasan, R; Vasanthan, S; Ganesan, S

2009-09-01

The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured with a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23-40 degrees C. The energy dependence of a MOSFET dosimeter was within +/-3.0% for 6-18MeV electron beams and 5.5% for 4MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4-18MeV.

MOSFET Electric-Charge Sensor

Science.gov (United States)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Simulation-based otolaryngology - head and neck surgery boot camp: 'how I do it'.

Science.gov (United States)

Chin, C J; Chin, C A; Roth, K; Rotenberg, B W; Fung, K

2016-03-01

In otolaryngology, surgical emergencies can occur at any time. An annual surgical training camp (or 'boot camp') offers junior residents from across North America the opportunity to learn and practice these skills in a safe environment. The goals of this study were to describe the set-up and execution of a simulation-based otolaryngology boot camp and to determine participants' confidence in performing routine and emergency on-call procedures in stressful situations before and after the boot camp. There were three main components of the boot camp: task trainers, simulations and an interactive panel discussion. Surveys were given to participants before and after the boot camp, and their confidence in performing the different tasks was assessed via multiple t-tests. Participants comprised 22 residents from 12 different universities; 10 of these completed both boot camp surveys. Of the nine tasks, the residents reported a significant improvement in confidence levels for six, including surgical airway and orbital haematoma management. An otolaryngology boot camp gives residents the chance to learn and practice emergency skills before encountering the emergencies in everyday practice. Their confidence in multiple skillsets was significantly improved after the boot camp. Given the shift towards competency-based learning in medical training, this study has implications for all surgical and procedural specialties.

Comparison between Phase-Shift Full-Bridge Converters with Noncoupled and Coupled Current-Doubler Rectifier

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Cheng-Tao Tsai

2013-01-01

Full Text Available This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR or a coupled current-doubler rectifier (CCDR is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

A CMOS matrix for extracting MOSFET parameters before and after irradiation

International Nuclear Information System (INIS)

Blaes, B.R.; Buehler, M.G.; Lin, Y.S.; Hicks, K.A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs has been designed to extract the DC MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs each with four different geometries that can be biased independently before and after irradiation. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Cobalt 60 irradiation results for the n-MOSFETs showed a very low threshold voltage shift of -3mV/krad(Si); whereas, the p-MOSFETs showed 21 mV/krad(Si). The worst-case threshold voltage shift occurred for the n-MOSFET with a gate bias of 5V during anneal, but for the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5V on the gate during irradiation

Technology computer aided design simulation for VLSI MOSFET

CERN Document Server

Sarkar, Chandan Kumar

2013-01-01

Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and

Comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier.

Science.gov (United States)

Tsai, Cheng-Tao; Su, Jye-Chau; Tseng, Sheng-Yu

2013-01-01

This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR) or a coupled current-doubler rectifier (CCDR) is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

Boots of Leather, Slippers of Gold: The History of a Lesbian Community

Directory of Open Access Journals (Sweden)

Maria Chiara Ferro

2016-03-01

Full Text Available Elizabeth Lapovsky Kennedy, Madeline D. Davis, Boots of Leather, Slippers of Gold: The History of a Lesbian Community (1993. New York: Routledge, 2014.   La recensione sottolinea la rilevanza del volume Boots of Leather, Slippers of Gold a vent’anni dalla pubblicazione, sia perché raccoglie e preserva testimonianze di butches e femmes degli anni ’40 e ’50, sia perché chiarisce il ruolo sociale della comunità butch-femme in quanto sede di resistenza pre-politica. Inoltre, si evidenzia l’utilità di modelli interpretativi informati dagli studi queer e transgender nell’ambito della ricerca storica su identità non normative come quelle butch e femme.

Accelerated Drying of Wet Boots

National Research Council Canada - National Science Library

Dyck, Walter

2002-01-01

.... One such material is sodium polyacrylate. Because recent field trials with Canadian Forces soldiers have reconfirmed that donning wet combat boots is very uncomfortable, a study was done to assess the efficacy of using sodium polyacrylate...

Commissioning of a MOSFET in-vivo patient dose verification system

International Nuclear Information System (INIS)

Jenetsky, G.O.; Brown, R.L.

2004-01-01

Full text: TLD dosimetry has long been used for in-vivo measurements in estimating absorbed dose to critical structures on patients. Preparing TLDs for measurement, and then obtaining the results is a time consuming process taking many hours. The Thomson-Neilson 'MOSFET 20' (Metal Oxide Semiconducting Field Effect Transistor) dose assessment system, allows for in-vivo measurements (preparation and results) within minutes. Before being used clinically for dose verification, the MOSFETs were tested against the manufacturer's technical specifications, and compared with results from TLDs measured under controlled experiments and patient measurements. Standard sensitivity MOSFETs (TN-502RD) were used with the bias supply set to High sensitivity range. MOSFETs were tested for linearity (5-100cGy) and their calibration factors obtained for all energies (6MV, 18MV, 6MeV, 12MeV, 16MeV, 20MeV) using the method described by Ramani. MOSFETs and TLDs were exposed to a 6MV beam for 50MU at various depths (RW3 solid water phantom) and field sizes and compared to results taken with an ion chamber. Measurements using both systems were also taken at beam edge and 5mm and 10mm out of the field. Eleven patients, who had lens dose assessment requests were measured with both TLDs and MOSFETs and a paired t-test was performed on the results. On two patients, multiple (nine and four) MOSFET measurements were taken and the range of results compared to the range obtained from the TLDs. MOSFET linearity obtained co-efficients of R 2 ≥ 0.996 for all energies, this compared to R 2 ≥ 0.996 recorded by both Ramani and Chaung. The y-intercept values varied from 0 to -2.0mV. Greatest variation between calibration factors, measured for each energy, was 7.5%, this is substantially greater than 3.8% quoted by the manufacturer. For the measurements taken at varying depths and field sizes both TLDs and MOSFETs agreed with the ion chamber results ±IcGy. Measurements taken at beam edge varied ±6c

Test, measurement and evaluation with the mine boot test and evaluation system

CSIR Research Space (South Africa)

Ramaloko, PM

2014-09-01

Full Text Available Protective footwear that mitigates the shock transferred to the victim’s leg during an antipersonnel landmine blast need to be evaluated to verify their protection levels. The Mine Boot Test and Evaluation System which include a surrogate lower leg...

Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

International Nuclear Information System (INIS)

Saha, A.R.; Chattopadhyay, S.; Bose, C.; Maiti, C.K.

2005-01-01

Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region

Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail: ars.iitkgp@gmail.com; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)

2005-12-05

Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

Schottky barrier MOSFET systems and fabrication thereof

Science.gov (United States)

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

An analytical drain current model for symmetric double-gate MOSFETs

Directory of Open Access Journals (Sweden)

Fei Yu

2018-04-01

Full Text Available An analytical surface-potential-based drain current model of symmetric double-gate (sDG MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson’s equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson’s equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

Dosimetry investigation of MOSFET for clinical IMRT dose verification.

Science.gov (United States)

Deshpande, Sudesh; Kumar, Rajesh; Ghadi, Yogesh; Neharu, R M; Kannan, V

2013-06-01

In IMRT, patient-specific dose verification is followed regularly at each centre. Simple and efficient dosimetry techniques play a very important role in routine clinical dosimetry QA. The MOSFET dosimeter offers several advantages over the conventional dosimeters such as its small detector size, immediate readout, immediate reuse, multiple point dose measurements. To use the MOSFET as routine clinical dosimetry system for pre-treatment dose verification in IMRT, a comprehensive set of experiments has been conducted, to investigate its linearity, reproducibility, dose rate effect and angular dependence for 6 MV x-ray beam. The MOSFETs shows a linear response with linearity coefficient of 0.992 for a dose range of 35 cGy to 427 cGy. The reproducibility of the MOSFET was measured by irradiating the MOSFET for ten consecutive irradiations in the dose range of 35 cGy to 427 cGy. The measured reproducibility of MOSFET was found to be within 4% up to 70 cGy and within 1.4% above 70 cGy. The dose rate effect on the MOSFET was investigated in the dose rate range 100 MU/min to 600 MU/min. The response of the MOSFET varies from -1.7% to 2.1%. The angular responses of the MOSFETs were measured at 10 degrees intervals from 90 to 270 degrees in an anticlockwise direction and normalized at gantry angle zero and it was found to be in the range of 0.98 ± 0.014 to 1.01 ± 0.014. The MOSFETs were calibrated in a phantom which was later used for IMRT verification. The measured calibration coefficients were found to be 1 mV/cGy and 2.995 mV/cGy in standard and high sensitivity mode respectively. The MOSFETs were used for pre-treatment dose verification in IMRT. Nine dosimeters were used for each patient to measure the dose in different plane. The average variation between calculated and measured dose at any location was within 3%. Dose verification using MOSFET and IMRT phantom was found to quick and efficient and well suited for a busy radiotherapy

Power-MOSFET Voltage Regulator

Science.gov (United States)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Kink effect in ultrathin FDSOI MOSFETs

Science.gov (United States)

Park, H. J.; Bawedin, M.; Choi, H. G.; Cristoloveanu, S.

2018-05-01

Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (MOSFETs.

Foot model for tracking temperature of safety boot insoles: application to different insole materials in firefighter boots.

Science.gov (United States)

García-Hernández, César; Sánchez-Álvarez, Eduardo J; Huertas-Talón, José-Luis

2016-01-01

This research is based on the development of a human foot model to study the temperature conditions of a foot bottom surface under extreme external conditions. This foot model is made by combining different manufacturing techniques to enable the simulation of bones and tissues, allowing the placement of sensors on its surface to track the temperature values of different points inside a shoe. These sensors let researchers capture valuable data during a defined period of time, making it possible to compare the features of different safety boots, socks or soles, among others. In this case, it has been applied to compare different plantar insole materials, placed into safety boots on a high-temperature surface.

Small field electron beam dosimetry using MOSFET detector.

Science.gov (United States)

Amin, Md Nurul; Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K

2010-10-04

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth-dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high-sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm × 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also per-formed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ± 1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam.

Calculating Second-Order Effects in MOSFET's

Science.gov (United States)

Benumof, Reuben; Zoutendyk, John A.; Coss, James R.

1990-01-01

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

A novel charge pump drive circuit for power MOSFETs

International Nuclear Information System (INIS)

Wang Songlin; Zhou Bo; Wang Hui; Guo Wangrui; Ye Qiang

2010-01-01

Novel improved power metal oxide semiconductor field effect transistor (MOSFET) drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6 μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW. (semiconductor integrated circuits)

Testing thermal comfort of trekking boots: an objective and subjective evaluation.

Science.gov (United States)

Arezes, P M; Neves, M M; Teixeira, S F; Leão, C P; Cunha, J L

2013-07-01

The study of the thermal comfort of the feet when using a specific type of shoe is of paramount importance, in particular if the main goal of the study is to attend to the needs of users. The main aim of this study was to propose a test battery for thermal comfort analysis and to apply it to the analysis of trekking boots. Methodologically, the project involves both objective and subjective evaluations. An objective evaluation of the thermal properties of the fabrics used in the boots was developed and applied. In addition, the thermal comfort provided when using the boots was also assessed both subjective and objectively. The evaluation of the thermal comfort during use, which was simulated in a laboratory environment, included the measurement of the temperature and moisture of the feet. The subjective assessment was performed using a questionnaire. From the results obtained, it was possible to define an optimal combination of fabrics to apply to trekking boots by considering the provided thermal insulation, air permeability and wicking. The results also revealed that the subjective perception of thermal comfort appears to be more related to the increase in temperature of the feet than to the moisture retention inside the boot. Although the evaluation of knits used in the boots indicated that a particular combination of fibres was optimal for use in the inner layer, the subjective and objective evaluation of thermal comfort revealed that the evaluation provided by users did not necessarily match the technical assessment data. No correlation was observed between the general comfort and specific thermal comfort assessments. Finally, the identification of thermal discomfort by specific foot areas would be useful in the process of designing and developing boots. Copyright © 2012 Elsevier Ltd and The Ergonomics Society. All rights reserved.

The effect of spiked boots on logger safety, productivity and workload.

Science.gov (United States)

Kirk, P; Parker, R

1994-04-01

Analysis of 1657 lost-time logging accidents in the New Zealand logging industry (1985-1991) indicates that 17.5% were as a result of slips, trips and falls and a total of 2870 days were lost. Most (56%) of these slipping, tripping and falling accidents occurred in the felling and delimbing phase of the logging operation, where 37% of the workforce are employed. In an attempt to reduce the number of slipping injuries to loggers employed in felling and delimbing, a study of the effectiveness of spike-soled (caulk) boots was undertaken. Four loggers were intensively observed at work, by continuous time-study methods, while wearing their conventional rubber-soled boots and then spike-soled boots. The number of slips, work methods used, physiological workload and productivity were compared for loggers wearing the two footwear types. Results indicated that spike-soled boots were associated with a significant reduction in the frequency of slips and had no adverse effect on work methods, physiological workload or productivity. Spike-soled boots are now being promoted for use by loggers in New Zealand as a simple method to reduce slipping, tripping and falling accidents.

Work boot design affects the way workers walk: A systematic review of the literature.

Science.gov (United States)

Dobson, Jessica A; Riddiford-Harland, Diane L; Bell, Alison F; Steele, Julie R

2017-05-01

Safety boots are compulsory in many occupations to protect the feet of workers from undesirable external stimuli, particularly in harsh work environments. The unique environmental conditions and varying tasks performed in different occupations necessitate a variety of boot designs to match each worker's occupational safety and functional requirements. Unfortunately, safety boots are often designed more for occupational safety at the expense of functionality and comfort. In fact, there is a paucity of published research investigating the influence that specific variations in work boot design have on fundamental tasks common to many occupations, such as walking. This literature review aimed to collate and examine what is currently known about the influence of boot design on walking in order to identify gaps in the literature and develop evidence-based recommendations upon which to design future research studies investigating work boot design. Copyright © 2017 Elsevier Ltd. All rights reserved.

A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application

Directory of Open Access Journals (Sweden)

A. Rana

2011-06-01

Full Text Available In this paper, novel hybrid MOSFET(HMOS structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leakage behaviour of HMOS has been investigated with the help of compact analytical model and Sentaurus Simulation. The results so obtained show good agreement between model and simulation data. It is found that HMOS structure has reduced the gate leakage current to great extent as compared to conventional overlapped MOSFET structure. Further, the proposed structure had demonstrated improved on current, off current, subthreshold slope and DIBL characteristic.

Experimental evaluation of a MOSFET dosimeter for proton dose measurements

International Nuclear Information System (INIS)

Kohno, Ryosuke; Nishio, Teiji; Miyagishi, Tomoko; Hirano, Eriko; Hotta, Kenji; Kawashima, Mitsuhiko; Ogino, Takashi

2006-01-01

The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, which acts as a point dosimeter, and also its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never been used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton beams. We experimentally evaluated dose reproducibility, linearity, fading effect, beam intensity dependence and angular dependence for the proton beam. Furthermore, the Bragg curve and spread-out Bragg peak were also measured and the linear-energy transfer (LET) dependence of the MOSFET response was investigated. Many characteristics of the MOSFET response for proton beams were the same as those for photon beams reported in previous papers. However, the angular MOSFET responses at 45, 90, 135, 225, 270 and 315 degrees for proton beams were over-responses of about 15%, and moreover the MOSFET response depended strongly on the LET of the proton beam. This study showed that the angular dependence and LET dependence of the MOSFET response must be considered very carefully for quantitative proton dose evaluations

Modeling the full-bridge series-resonant power converter

Science.gov (United States)

King, R. J.; Stuart, T. A.

1982-01-01

A steady state model is derived for the full-bridge series-resonant power converter. Normalized parametric curves for various currents and voltages are then plotted versus the triggering angle of the switching devices. The calculations are compared with experimental measurements made on a 50 kHz converter and a discussion of certain operating problems is presented.

Verification of angular dependence in MOSFET detector

International Nuclear Information System (INIS)

Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio

2017-01-01

In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

Verification of angular dependence in MOSFET detector

Energy Technology Data Exchange (ETDEWEB)

Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio, E-mail: chsouza@usp.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

2017-07-01

In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

Effects of temperature variation on MOSFET dosimetry

International Nuclear Information System (INIS)

Cheung Tsang; Butson, Martin J; Yu, Peter K N

2004-01-01

This note investigates temperature effects on dosimetry using a metal oxide semiconductor field effect transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown that the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg. C up to 40 deg. C. Thus standard irradiations performed at room temperature can be directly compared to in vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependent on the dose history of the MOSFET dosimeter. However, the variation can be accounted for in the measurement method. For accurate dosimetry, the detector should be placed for approximately 60 s on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 s after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. (note)

The effect of ionizing radiation on analog characteristics of MOSFET

International Nuclear Information System (INIS)

Ren Diyuan; Yu Xuefeng; Lu Wu; Gao Wenyu; Fan Long; Zhang Guoqiang; Yan Rongliang

1994-01-01

The effects of 60 Co γ-ray on the linearity and output characteristics of MOSFETs were investigated. The relations of oxide-trapped charge and Si/SiO 2 interface state density to the decrease of mobility μ-bar and transconductance g m , and the shift of the output curves for both P-MOSFETs and N-MOSFETs were qualitatively described. It was shown that degradation of analog characteristics, for P-MOSFETs, resulted from both oxide-trapped charge and interface state, but the degradation for N-MOSFETs was mainly due to the increase of radiation induced Si-SiO 2 interface state density

Power MOSFET Thermal Instability Operation Characterization Support

Science.gov (United States)

Shue, John L.; Leidecker, Henning

2010-01-01

Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

International Nuclear Information System (INIS)

Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

2006-01-01

In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

Impact of work boots and load carriage on the gait of oil rig workers.

Science.gov (United States)

Tian, Miao; Park, Huiju; Koo, Heekwang; Xu, Qinwen; Li, Jun

2017-03-01

Effects of work boots and load carriage (6.4 kg and 12.8 kg) on gait pattern were investigated. The protective work boots were examined by comparison with running shoes through human performance tests with 15 male participants. The loads were carried symmetrically and asymmetrically on the shoulder and hand. Statistical data analysis showed a prolonged stance phase and decreased double support for work boots. A significantly increased ground reaction force was found in work boot conditions as the weight of loads increases. This study demonstrates that inflexible and heavy work boots restrict foot movement and require greater torque at the ankle to propel the body forward, which may increase physical strain and the risk of musculoskeletal injuries. Development of improved fixation methods for work boots, increased use of flexible protective layers and further study of anthropometry of human foot morphology for improved safety and work efficiency of industry workers are suggested.

Spin injection, transport, and read/write operation in spin-based MOSFET

International Nuclear Information System (INIS)

Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

2011-01-01

We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Image guided IMRT dosimetry using anatomy specific MOSFET configurations.

Science.gov (United States)

Amin, Md Nurul; Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

2008-06-23

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within -0.26 +/- 0.88% and 0.06 +/- 1.94% (1 sigma) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X-Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47 +/- 2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans.

Analysis and Comprehensive Analytical Modeling of Statistical Variations in Subthreshold MOSFET's High Frequency Characteristics

Directory of Open Access Journals (Sweden)

Rawid Banchuin

2014-01-01

Full Text Available In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such variations in terms of their variances have been proposed. Major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account in the proposed analysis and modeling. The up to dated comprehensive analytical model of statistical variation in MOSFET's parameter has been used as the basis of analysis and modeling. The resulting models have been found to be both analytic and comprehensive as they are the precise mathematical expressions in terms of physical level variables of MOSFET. Furthermore, they have been verified at the nanometer level by using 65~nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 5 % average percentages of errors. Hence, the performed analysis gives the resulting models which have been found to be the potential mathematical tool for the statistical and variability aware analysis and design of subthreshold MOSFET based VHF circuits, systems and applications.

Pressure Drop of Chamfer on Spacer Grid Strap

Energy Technology Data Exchange (ETDEWEB)

Kim, Euijae; Kim, Kanghoon; Kim, Kyounghong; Nahm, Keeyil [KEPCO Nuclear Fuel Co., Daejeon (Korea, Republic of)

2014-05-15

A swirl flow and cross flow are generated by the spacer grid with mixing vane that enhances the thermal performance and critical heat flux (CHF). The additional pressure drop makes it difficult to meet acceptance criteria for overall pressure drop in fuel assembly depending upon the pump capacity. The chamfer on the end of spacer grid strap is one solution to reduce additional pressure drop without any adverse effect on flow fields. In this research, the pressure drop tests for spacer grid with and without chamfer were carried out at the hydraulic test facility. The result can be applied to develop high performance nuclear fuel assemblies for Pressurized Water Reactor (PWR) plants. The pressure drop tests for 5x5 spacer grid with and without chamfer as well as 6x6 spacer grid with and without chamfer were carried out at the INFINIT test facility. The Reynolds number ranged about from 16000 to 75000. The sweep-up and sweep-down test showed that the direction of sweep did not affect the pressure drop. The chamfer on spacer grid strap reduced the pressure drop due to the decreased in ratio of inlet area to outlet area. The pressure loss coefficient for spacer grid with chamfer was by up to 13.8 % lower than that for spacer grid without chamfer. Hence, the chamfer on spacer grid strap was one of effective ways to reduce the pressure drop.

Structural and Electrical Analysis of Various MOSFET Designs

OpenAIRE

Pallavi Choudhary; Tarun Kapoor

2015-01-01

Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems...

Practical applications of SiC-MOSFETs and further developments

Science.gov (United States)

Furuhashi, Masayuki; Tomohisa, Shingo; Kuroiwa, Takeharu; Yamakawa, Satoshi

2016-03-01

The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET doping and they demonstrated a loss reduction of 55% in a traction inverter compared to a conventional system. In the case of a 1.2 kV MOSFET, a 1 cm2 die verified that it can control a large current of over 600 A. For home appliances, we reduce the trade-off between the threshold voltage and channel mobility by a new gate oxide process. High threshold voltage SiC-MOSFETs having a low on-resistance contribute to the low cost installation of SiC-MOSFETs into air conditioners and achieved a loss reduction of 45% in DC converters. For further reduction of conduction loss, we investigated new structures and technologies. Trench SiC-MOSFETs having a bottom p-well verify lower on-resistance and a larger SCSOA than those of planar MOSFETs. The optimization of the dopant concentration in the drift layer and a reduction of wafer thickness verified the reduction of on-resistance. They are expected to contribute to a lower power loss.

Practical applications of SiC-MOSFETs and further developments

International Nuclear Information System (INIS)

Furuhashi, Masayuki; Tomohisa, Shingo; Kuroiwa, Takeharu; Yamakawa, Satoshi

2016-01-01

The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET doping and they demonstrated a loss reduction of 55% in a traction inverter compared to a conventional system. In the case of a 1.2 kV MOSFET, a 1 cm 2 die verified that it can control a large current of over 600 A. For home appliances, we reduce the trade-off between the threshold voltage and channel mobility by a new gate oxide process. High threshold voltage SiC-MOSFETs having a low on-resistance contribute to the low cost installation of SiC-MOSFETs into air conditioners and achieved a loss reduction of 45% in DC converters. For further reduction of conduction loss, we investigated new structures and technologies. Trench SiC-MOSFETs having a bottom p-well verify lower on-resistance and a larger SCSOA than those of planar MOSFETs. The optimization of the dopant concentration in the drift layer and a reduction of wafer thickness verified the reduction of on-resistance. They are expected to contribute to a lower power loss. (paper)

Analysis of 4-strap ICRF Antenna Performance in Alcator C-Mod

International Nuclear Information System (INIS)

Schilling, G.; Wukitch, S.J.; Boivin, R.L.; Goetz, J.A.; Hosea, J.C.; Irby, J.H.; Lin, Y.; Parisot, A.; Porkolab, M.; Wilson, J.R.

2003-01-01

A 4-strap ICRF antenna was designed and fabricated for plasma heating and current drive in the Alcator C-Mod tokamak. Initial upgrades were carried out in 2000 and 2001, which eliminated surface arcing between the metallic protection tiles and reduced plasma-wall interactions at the antenna front surface. A boron nitride septum was added at the antenna midplane to intersect electric fields resulting from radio-frequency sheath rectification, which eliminated antenna corner heating at high power levels. The current feeds to the radiating straps were reoriented from an E||B to E parallel B geometry, avoiding the empirically observed ∼15 kV/cm field limit and raising antenna voltage holding capability. Further modifications were carried out in 2002 and 2003. These included changes to the antenna current strap, the boron nitride tile mounting geometry, and shielding the BN-metal interface from the plasma. The antenna heating efficiency, power, and voltage characteristics under these various configurations will be presented

The three-dimensional shapes of underground coal miners' feet do not match the internal dimensions of their work boots.

Science.gov (United States)

Dobson, Jessica A; Riddiford-Harland, Diane L; Bell, Alison F; Steele, Julie R

2018-04-01

Mining work boots provide an interface between the foot and the ground, protecting and supporting miners' feet during lengthy coal mining shifts. Although underground coal miners report the fit of their work boots as reasonable to good, they frequently rate their boots as uncomfortable, suggesting that there is a mismatch between the shape of their feet and their boots. This study aimed to identify whether dimensions derived from the three-dimensional scans of 208 underground coal miners' feet (age 38.3 ± 9.8 years) differed from the internal dimensions of their work boots. The results revealed underground coal miners wore boots that were substantially longer than their feet, possibly because boots available in their correct length were too narrow. It is recommended boot manufacturers reassess the algorithms used to create boot lasts, focusing on adjusting boot circumference at the instep and heel relative to increases in foot length. Practitioner Summary: Fit and comfort ratings suggest a mismatch between the shape of underground coal miners' feet and their boots exists. This study examined whether three-dimensional scans of 208 miners' feet differed from their boot internal dimensions. Miners wore boots substantially longer than their feet, possibly due to inadequate width.

Behavior of MOSFET Amplifier in Radiation Fields

International Nuclear Information System (INIS)

Sharshar, K.A.A.; Ashry, M.

2000-01-01

MOSFET type 2 N 3823 characteristics and its application as an amplifier are analyzed including the effects of gamma, electron beam 1.5 MeV 25 m A and neutron flux. The 1-V characteristics, transfer curve, and the frequency response of the amplifier, and the amplification factor(A v 0 are discussed with MOSFET circuit parameters. The drain current and the amplitude of the output signal decrease as the absorbed dose increases. The measured values of the amplified signal are attenuated by 30% and 6% after exposing the MOSFET to gamma radiation and electron beam at the same dose respectively. Also for exposure to 4x10 13 N/cm 3 neutrons decreased the measured value of the amplified signal by 73% of the initial values. The decrease in the gain of the MOSFET is due to the degradation of the transconductance. It is also noticed that percentage of the decrease depends on the type of radiation

Full scale monitoring of wind and traffic induced response of a suspension bridge

Directory of Open Access Journals (Sweden)

Cheynet Etienne

2015-01-01

Full Text Available This paper presents a full-scale analysis of wind and traffic-induced vibrations of a long-span suspension bridge in complex terrain. Several wind and acceleration sensors have been installed along the main span on Lysefjord Bridge in Norway. In the present study, three days of continuous records are analysed. Traffic-induced vibrations are dominant at low and moderated wind speed, with non-negligible effects on the overall bridge response for heavy vehicles only. Traffic and wind-induced vibrations are compared in terms of root mean square of the acceleration response, and three simples approaches are proposed to isolate records dominated by wind-induced vibration. The first one relies on the separation of nocturnal and diurnal samples. The second one is based on the evaluation of the time-varying root mean square of the acceleration response. The last one evaluates the relative importance of the high frequency domain of the acceleration bridge response. It appears that traffic-induced vibrations may have to be taken into account for the buffeting analysis of long-span bridge under moderated wind.

[Skin boot versus knee joint--a sports medicine, orthopedic and biomechanical problem].

Science.gov (United States)

Schaff, P; Hauser, W

1989-12-01

In contrast to the drop in the incidence of fractures of the lower leg, or tibia, that has been observed in recent years, the incidence of knee injuries has not decreased in skiing and there has been a relative increase in the frequency of severe knee lesions and of the isolated rupture of the cruciate ligament, prompting us to conduct a comprehensive study of the causes of these phenomena. It was found necessary to develop a innovative method of measurement to analyse the patterns of movement and stress to which the knee injuries were attributed. By combining and synchronizing movement analysis, measurement of pressure distribution and measurement of force it became possible to perform a detailed analysis of the forward/backward movement in the ski boot in the laboratory and also on the course by telemetry (part 1). The first two studies were devoted to the forward lean in the ski boot (part 2). Basing on movement analysis and simultaneous determination of pressure distribution along the lower leg, the influence of different ski boot models on the Vorlage, or forward lean, movement of beginners and very experienced skiers was studied. An important result of the laboratory experiment was that whereas a ski boot can be moved without difficulty into a strong forward lean position of the skier by an experienced sportsman, a beginner can only assume a forward lean with 20% less inclination (this being a significant difference). In other words: the range of the freedom of movement in such a boot is markedly limited. The assumption that in ski amateurs such a ski boot would promote skiing in backward lean position, was confirmed by studies on the course (part 3). The pupils became definitely less adept at learning if they were required to wear a stiff ski boot; analysis of movement showed that the forward lean angles were clearly smaller and that the skiers adopted a skiing style in backward lean position that exercised an undue strain on the knees. The other two studies

Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications

Directory of Open Access Journals (Sweden)

Yali Xiong

2008-01-01

Full Text Available This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range. Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5 MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1 MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The RDS(ON×QG figure of merit (FOM still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2 MHz and 65% at 5 MHz even with the most advanced trench MOSFET technologies.

Fatigue Assessment of Full-Scale Retrofitted Orthotropic Bridge Decks

NARCIS (Netherlands)

Teixeira De Freitas, S.; Kolstein, M.H.; Bijlaard, F.S.K.

2017-01-01

Full-scale fatigue tests were performed on two retrofitted orthotropic bridge decks (OBDs). The retrofitting systems consist of adding a second steel plate on the top of the existing deck. The aim is to reduce the stresses at the fatigue-sensitive details and therefore extend the fatigue life of

Prognostics of Power MOSFET

Science.gov (United States)

Celaya, Jose Ramon; Saxena, Abhinav; Vashchenko, Vladislay; Saha, Sankalita; Goebel, Kai Frank

2011-01-01

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

Cryogenic switched MOSFET characterization

Science.gov (United States)

1981-01-01

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout.

Science.gov (United States)

Lee, Min Su; Lee, Hee Chul

2014-01-01

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the edge of the source and drain, which affects its aspect ratio. In order to increase its practical use, a new aspect ratio model is proposed for the DGA n-MOSFET and this model is evaluated through three-dimensional simulations and measurements of the fabricated devices. The proposed aspect ratio model for the DGA n-MOSFET exhibits good agreement with the simulation and measurement results.

Tourniquet pressures: strap width and tensioning system widths.

Science.gov (United States)

Wall, Piper L; Coughlin, Ohmar; Rometti, Mary; Birkholz, Sarah; Gildemaster, Yvonne; Grulke, Lisa; Sahr, Sheryl; Buising, Charisse M

2014-01-01

Pressure distribution over tourniquet width is a determinant of pressure needed for arterial occlusion. Different width tensioning systems could result in arterial occlusion pressure differences among nonelastic strap designs of equal width. Ratcheting Medical Tourniquets (RMTs; m2 inc., http://www.ratcheting buckles.com) with a 1.9 cm-wide (Tactical RMT) or 2.3 cm-wide (Mass Casualty RMT) ladder were directly compared (16 recipients, 16 thighs and 16 upper arms for each tourniquetx2). Then, RMTs were retrospectively compared with the windlass Combat Application Tourniquet (C-A-T ["CAT"], http://combattourniquet.com) with a 2.5 cm-wide internal tensioning strap. Pressure was measured with an air-filled No. 1 neonatal blood pressure cuff under each 3.8 cm-wide tourniquet. RMT circumferential pressure distribution was not uniform. Tactical RMT pressures were not higher, and there were no differences between the RMTs in the effectiveness, ease of use ("97% easy"), or discomfort. However, a difference did occur regarding tooth skipping of the pawl during ratchet advancement: it occurred in 1 of 64 Tactical RMT applications versus 27 of 64 Mass Casualty RMT applications. CAT and RMT occlusion pressures were frequently over 300 mmHg. RMT arm occlusion pressures (175-397 mmHg), however, were lower than RMT thigh occlusion pressures (197-562 mmHg). RMT effectiveness was better with 99% reached occlusion and 1% lost occlusion over 1 minute versus the CAT with 95% reached occlusion and 28% lost occlusion over 1 minute. RMT muscle tension changes (up to 232 mmHg) and pressure losses over 1 minute (24±11 mmHg arm under strap to 40±12 mmHg thigh under ladder) suggest more occlusion losses may have occurred if tourniquet duration was extended. The narrower tensioning system Tactical RMT has better performance characteristics than the Mass Casualty RMT. The 3.8 cm-wide RMTs have some pressure and effectiveness similarities and differences compared with the CAT. Clinically

Pervious concrete fill in Pearl-Chain Bridges: Using small-scale results in full-scale implementation

DEFF Research Database (Denmark)

Lund, Mia Schou Møller; Hansen, Kurt Kielsgaard; Truelsen, R.

2016-01-01

distribution and strength properties is determined for 800 mm high blocks cast in different numbers of layers, and (2) full-scale implementation in a 26 m long Pearl-Chain Bridge. With a layer thickness of 27 cm, the small-scale tests indicated homogenous results; however, for the full-scale implementation......Pearl-Chain Bridge technology is a new prefabricated arch solution for highway bridges. This study investigates the feasibility of pervious concrete as a filling material in Pearl-Chain Bridges. The study is divided into two steps: (1) small-scale tests where the variation in vertical void...

Calibration of a MOSFET detection system for 6-MV in vivo dosimetry

International Nuclear Information System (INIS)

Scalchi, Paolo; Francescon, P.

1998-01-01

Purpose: Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. Methods and Materials: MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. Results: The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 x 5 to 30 x 30 cm 2 . In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0 deg. to 90 deg. , the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom

Low Power and High Sensitivity MOSFET-Based Pressure Sensor

International Nuclear Information System (INIS)

Zhang Zhao-Hua; Ren Tian-Ling; Zhang Yan-Hong; Han Rui-Rui; Liu Li-Tian

2012-01-01

Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%. (cross-disciplinary physics and related areas of science and technology)

Analysis of the Degradation of MOSFETs in Switching Mode Power Supply by Characterizing Source Oscillator Signals

Directory of Open Access Journals (Sweden)

Xueyan Zheng

2013-01-01

Full Text Available Switching Mode Power Supply (SMPS has been widely applied in aeronautics, nuclear power, high-speed railways, and other areas related to national strategy and security. The degradation of MOSFET occupies a dominant position in the key factors affecting the reliability of SMPS. MOSFETs are used as low-voltage switches to regulate the DC voltage in SMPS. The studies have shown that die-attach degradation leads to an increase in on-state resistance due to its dependence on junction temperature. On-state resistance is the key indicator of the health of MOSFETs. In this paper, an online real-time method is presented for predicting the degradation of MOSFETs. First, the relationship between an oscillator signal of source and on-state resistance is introduced. Because oscillator signals change when they age, a feature is proposed to capture these changes and use them as indicators of the state of health of MOSFETs. A platform for testing characterizations is then established to monitor oscillator signals of source. Changes in oscillator signal measurement were observed with aged on-state resistance as a result of die-attach degradation. The experimental results demonstrate that the method is efficient. This study will enable a method to predict the failure of MOSFETs to be developed.

Quantum Mechanical Modeling of Ballistic MOSFETs

Science.gov (United States)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan (Technical Monitor)

2001-01-01

The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

Investigation of the use of MOSFET for clinical IMRT dosimetric verification

International Nuclear Information System (INIS)

Chuang, Cynthia F.; Verhey, Lynn J.; Xia Ping

2002-01-01

With advanced conformal radiotherapy using intensity modulated beams, it is important to have radiation dose verification measurements prior to treatment. Metal oxide semiconductor field effect transistors (MOSFET) have the advantage of a faster and simpler reading procedure compared to thermoluminescent dosimeters (TLD), and with the commercial MOSFET system, multiple detectors can be used simultaneously. In addition, the small size of the detector could be advantageous, especially for point dose measurements in small homogeneous dose regions. To evaluate the feasibility of MOSFET for routine IMRT dosimetry, a comprehensive set of experiments has been conducted, to investigate the stability, linearity, energy, and angular dependence. For a period of two weeks, under a standard measurement setup, the measured dose standard deviation using the MOSFETs was ±0.015 Gy with the mean dose being 1.00 Gy. For a measured dose range of 0.3 Gy to 4.2 Gy, the MOSFETs present a linear response, with a linearity coefficient of 0.998. Under a 10x10 cm 2 square field, the dose variations measured by the MOSFETs for every 10 degrees from 0 to 180 degrees is ±2.5%. The percent depth dose (PDD) measurements were used to verify the energy dependence. The measured PDD using the MOSFETs from 0.5 cm to 34 cm depth agreed to within ±3% when compared to that of the ionization chamber. For IMRT dose verification, two special phantoms were designed. One is a solid water slab with 81 possible MOSFET placement holes, and another is a cylindrical phantom with 48 placement holes. For each IMRT phantom verification, an ionization chamber and 3 to 5 MOSFETs were used to measure multiple point doses at different locations. Preliminary results show that the agreement between dose measured by MOSFET and that calculated by Corvus is within 5% error, while the agreement between ionization chamber measurement and the calculation is within 3% error. In conclusion, MOSFET detectors are suitable for

Finite element modeling of a 3D coupled foot-boot model.

Science.gov (United States)

Qiu, Tian-Xia; Teo, Ee-Chon; Yan, Ya-Bo; Lei, Wei

2011-12-01

Increasingly, musculoskeletal models of the human body are used as powerful tools to study biological structures. The lower limb, and in particular the foot, is of interest because it is the primary physical interaction between the body and the environment during locomotion. The goal of this paper is to adopt the finite element (FE) modeling and analysis approaches to create a state-of-the-art 3D coupled foot-boot model for future studies on biomechanical investigation of stress injury mechanism, foot wear design and parachute landing fall simulation. In the modeling process, the foot-ankle model with lower leg was developed based on Computed Tomography (CT) images using ScanIP, Surfacer and ANSYS. Then, the boot was represented by assembling the FE models of upper, insole, midsole and outsole built based on the FE model of the foot-ankle, and finally the coupled foot-boot model was generated by putting together the models of the lower limb and boot. In this study, the FE model of foot and ankle was validated during balance standing. There was a good agreement in the overall patterns of predicted and measured plantar pressure distribution published in literature. The coupled foot-boot model will be fully validated in the subsequent works under both static and dynamic loading conditions for further studies on injuries investigation in military and sports, foot wear design and characteristics of parachute landing impact in military. Copyright © 2011 IPEM. Published by Elsevier Ltd. All rights reserved.

Influence of gamma-ray irradiation on 6H-SiC MOSFETs

International Nuclear Information System (INIS)

Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

1998-01-01

Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

Challenges in Switching SiC MOSFET without Ringing

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig

2014-01-01

Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

CMOS-compatible batch processing of monolayer MoS2 MOSFETs

Science.gov (United States)

Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

2018-04-01

Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

Study on effective MOSFET channel length extracted from gate capacitance

Science.gov (United States)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Effect of ski boot settings on tibio-femoral abduction and rotation during standing and simulated skiing.

Science.gov (United States)

Böhm, Harald; Senner, Veit

2008-01-01

Ski boots are designed to transfer high forces from the skier to the ski. For this purpose they are made of stiff materials and constrain the leg of the skier to an unnatural position. To overcome the problem of unnatural knee posture, the ski boots can be adjusted in the frontal plane as well as in the horizontal plane by the canting mechanism and the "v-position", respectively. Canting enables lateral and medial orientation of the shaft with respect to the base of the boot. The "v-position" is a pronounced outward rotation of the boot's base with respect to the ski's long axis. The purpose of this study is to investigate the effect of different foot rotations and ski boot canting settings on knee kinematics during standing and simulated skiing. Knee kinematics was measured by means of motion analysis and with the help of skin-mounted markers on 20 subjects. The ski boots in their standard settings significantly constrained the skier to an unnatural valgus position. Ski boot base rotation had a significant effect on internal external knee rotation, whereas canting had an effect on varus-valgus angles during standing. However, for the simulated skiing position no effects were observed. The study suggests that the constraints of the ski boots result in a clinically relevant valgus misalignment. Canting settings reduced the misalignment but only by about 10%. Increased ski boot canting settings would therefore be desirable. Knee kinematics showed that rotational misalignment could not be linked to any significant increase in injury risk.

On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

International Nuclear Information System (INIS)

Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao; Chen Dapeng; Ye Tianchun

2014-01-01

The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, V t -roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (V t ) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing V t at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated. (semiconductor devices)

AC-DC PFC Converter Using Combination of Flyback Converter and Full-bridge DC-DC Converter

Directory of Open Access Journals (Sweden)

Moh. Zaenal Efendi

2014-06-01

Full Text Available This paper presents a combination of power factor correction converter using Flyback converter and Full-bridge dc-dc converter in series connection. Flyback converter is operated in discontinuous conduction mode so that it can serve as a power factor correction converter and meanwhile Full-bridge dc-dc converter is used for dc regulator. This converter system is designed to produce a 86 Volt of output voltage and 2 A of output current. Both simulation and experiment results show that the power factor of this converter achieves up to 0.99 and meets harmonic standard of IEC61000-3-2. Keywords: Flyback Converter, Full-bridge DC-DC Converter, Power Factor Correction.

Statistical MOSFET Parameter Extraction with Parameter Selection for Minimal Point Measurement

Directory of Open Access Journals (Sweden)

Marga Alisjahbana

2013-11-01

Full Text Available A method to statistically extract MOSFET model parameters from a minimal number of transistor I(V characteristic curve measurements, taken during fabrication process monitoring. It includes a sensitivity analysis of the model, test/measurement point selection, and a parameter extraction experiment on the process data. The actual extraction is based on a linear error model, the sensitivity of the MOSFET model with respect to the parameters, and Newton-Raphson iterations. Simulated results showed good accuracy of parameter extraction and I(V curve fit for parameter deviations of up 20% from nominal values, including for a process shift of 10% from nominal.

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

Science.gov (United States)

Buehler, M. G.; Moore, B. T.

1985-01-01

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Characterization of responses and comparison of calibration factor for commercial MOSFET detectors.

Science.gov (United States)

Bharanidharan, Ganesan; Manigandan, Durai; Devan, Krishnamurthy; Subramani, Vellaiyan; Gopishankar, Natanasabapathi; Ganesh, Tharmar; Joshi, Rakeshchander; Rath, Gourakishore; Velmurugan, Jagadeesan; Aruna, Prakasarao; Ganesan, Singaravelu

2005-01-01

A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value>0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.

A meta-analysis into the effect of lateral-wedged insoles with subtalar strapping versus traditional insoles in adults with medial knee osteoarthritis.

Directory of Open Access Journals (Sweden)

L. Duvenhage

2011-02-01

Full Text Available To  systematically  identify,  collate,  and  analyze  the  current available evidence  for  the  effectiveness  of  lateral-wedged  insoles,  with subtalar strapping,  on  reducing  pain,  improving  function  and  improving  the femoral-tibial  angle  (FTA,  in  adults  with  medial  knee osteoarthritis compared to traditional insoles without subtalar strapping.Six computerised databases, namely Cochrane Library, CiNAHL, PEDro, BIOMED central,  PubMed  and  ScienceDirect  were  searched. The  included articles were  then  all  rated  using  the  PEDro  scale  to  determine  their meth-odological quality.  Homogeneous data were pooled in a meta-analysis using Review Manager (REVMAN software.  Where statistical pooling of the results was not possible, findings were summarised in narrative form. Three randomised controlled trials were selected for this review. The average PEDro score was 5.7. A meta-analysis demonstrated that lateral-wedged insoles with subtalar strapping significantly reduced pain in the short-term (p=0.004. The review found that lateral-wedge insoles with subtalar strapping significantly decreased pain in the short-term and seemed to have a positive effect on the FTA in the long-term, when compared to traditional insoles without  subtalar strapping. The lateral-wedge insole with subtalar strapping may provide a financially feasible adjunctive self-management treatment for knee OA and should be considered before invasive procedures such as surgery.

COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANOSCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH

Directory of Open Access Journals (Sweden)

V. PALANICHAMY

2015-02-01

Full Text Available In this work, the performance of multiple-gate SOI MOSFETs is analysed using variational approach including quantum effects. An analytical model is derived to accounting the quantum effects at the silicon (Si/silicon dioxide (SiO2 interface. A general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, the drain current is obtained. Our model results are compared with the simulation results and its shows very good agreement. Our results highlighted that cylindrical surrounding gate MOSFET is a good candidate to obtain the high drain current compared with other two devices.

Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms.

Science.gov (United States)

Koivisto, Juha H; Wolff, Jan E; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-07-08

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50-90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point-dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low-dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was -8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD-comparable low-dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in

Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

Science.gov (United States)

Wolff, Jan E.; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-01-01

The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50–90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point‐dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k=2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low‐dose limit. The sensitivity was 3.09±0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was −8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD‐comparable low‐dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However

Detail study of SiC MOSFET switching characteristics

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig

2014-01-01

This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

Parallel Connection of Silicon Carbide MOSFETs for Multichip Power Modules

DEFF Research Database (Denmark)

Li, Helong

challenges from the manufacture and application points of view. The less mature manufacture process limits the yield and the single die size of the SiC MOSFETs, which results a smaller current capability of a single SiC MOSFET die. Consequently, in high current application, the paralleled connections of Si...... connections for the paralleled dies are presented and the source of the transient current imbalance is concluded. To mitigate the transient current imbalance in the traditional DBC layout, a novel DBC layout with split output is proposed. First, the working mechanism of the split output topology is studied...... the current sharing performance among the paralleled SiC MOSFET dies in the power module. The proposed DBC layout is not only limited for SiC MOSFETs, but also for Si IGBTs and other voltage controlled devices. of the circuit mismatch on the paralleled connection of SiC MOSFETs. It reveals the circuit...

The BOOTES-5 telescope at San Pedro Martir National Astronomical Observatory, Mexico

Science.gov (United States)

Hiriart, D.; Valdez, J.; Martínez, B.; García, B.; Cordova, A.; Colorado, E.; Guisa, G.; Ochoa, J. L.; Nuñez, J. M.; Ceseña, U.; Cunniffe, R.; Murphy, D.; Lee, W.; Park, Il H.; Castro-Tirado, A. J.

2016-12-01

BOOTES-5 is the fifth robotic observatory of the international network of robotic telescopes BOOTES (Burst Observer and Optical Transient Exploring Optical System). It is located at the National Astronomical Observatory at Sierra San Pedro Martir, Baja California, Mexico. It was dedicated on November 26, 2015 and it is in the process of testing. Its main scientific objective is the observation and monitoring of the optic counterparts of gamma-ray bursts as quickly as possible once they have been detected from space or other ground-based observatories. BOOTES-5 fue nombrado Telescopio Javier Gorosabel en memoria del astrónomo español Javier Gorosabel Urkia.

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Directory of Open Access Journals (Sweden)

Yashu Swami

2017-01-01

Full Text Available Threshold voltage (VTH is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. The outcomes of extraction methods diverge from the exact values due to various short-channel effects (SCEs and nonidealities present in the device. A new approach to define and extract the real value of VTH of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE-independent VTH extraction method named “hybrid extrapolation VTH extraction method” (HEEM is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2D TCAD simulation and confirmed analytically at various technology nodes.

Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

Directory of Open Access Journals (Sweden)

Michael Loong Peng Tan

2013-01-01

Full Text Available Long channel carbon nanotube transistor (CNT can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL effects in silicon MOSFET while sustaining the same unit area at higher current density.

Stored-grain insect population commingling densities in wheat and corn from pilot-scale bucket elevator boots

Science.gov (United States)

Grain elevator boot and pit areas facilitate the commingling of insects with the grain moving through the elevator leg. A removable boot was developed to facilitate residual grain removal and preservation in the boot and to quantify the commingling magnitude as a function of stored-product insect de...

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

Science.gov (United States)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig; Pham, Cam

2014-01-01

This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give...... suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies....

Prognostics of Power MOSFET

Data.gov (United States)

National Aeronautics and Space Administration — This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and...

STRAP Is a Strong Predictive Marker of Adjuvant Chemotherapy Benefit in Colorectal Cancer

OpenAIRE

Buess, Martin; Terracciano, Luigi; Reuter, Jurgen; Ballabeni, Pierluigi; Boulay, Jean-Louis; Laffer, Urban; Metzger, Urs; Herrmann, Richard; Rochlitz, Christoph

2004-01-01

BACKGROUND: Molecular predictors for the effectiveness of adjuvant chemotherapy in colorectal cancer are of considerable clinical interest. To this aim, we analyzed the serine threonine receptor-associated protein (STRAP), an inhibitor of TGF-βsignaling, with regard to prognosis and prediction of adjuvant 5-FU chemotherapy benefit. i The gene copy status of STRAP was determined using quantitative realtime polymerase chain reaction in 166 colorectal tumor biopsies, which had been collected fro...

The response of the MiL-Lx leg fitted with combat boots under impact loading

CSIR Research Space (South Africa)

Pandelani, T

2014-01-01

Full Text Available ) or even a side-attack IED. This impact causes significant soft tissue and/or bony injuries, leading to a long recovery, medical complications and may require limb amputation if not mitigated [1]. The military boots which the occupants wear...

MOSFET LF noise under Large Signal Excitation: Measurement, Modelling and Application

NARCIS (Netherlands)

van der Wel, A.P.

2005-01-01

Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface channel device. Both n and p-channel devices exhibit similar low frequency (LF) noise behaviour that can be explained by a carrier number fluctuation model (section 3.5). LF noise in MOSFETs is predominantly caused by Random

New series half-bridge converters with the balance input split capacitor voltages

Science.gov (United States)

Lin, Bor-Ren; Chiang, Huann-Keng; Wang, Shang-Lun

2016-03-01

This article presents a new dc/dc converter to perform the main functions of zero voltage switching (ZWS), low converter size, high switching frequency and low-voltage stress. Metal-oxide-semiconductor field-effect transistors (MOSFETs) with high switching frequency are used to reduce the converter size and increase circuit efficiency. To overcome low-voltage stress and high turn-on resistance of MOSFETs, the series half-bridge topology is adopted in the proposed converter. Hence, the low-voltage stress MOSFETs can be used for medium-input voltage applications. The asymmetric pulse-width modulation is used to generate the gating signals and achieve the ZWS. On the secondary side, the parallel connection of two diode rectifiers is adopted to reduce the current rating of passive components. On the primary side, the series connection of two transformers is used to balance two output inductor currents. Two flying capacitors are used to automatically balance the input split capacitor voltages. Finally, experiments with 1000 W rated power are performed to verify the theoretical analysis and the effectiveness of proposed converter.

A Systematic Method to Synthesize New Transformerless Full-bridge Grid-tied Inverters

DEFF Research Database (Denmark)

Wang, Hongliang; Burton, Sarah; Liu, Yan-Fei

2014-01-01

Many inverter topologies have been proposed to eliminate the leakage current of transformerless Full Bridge Grid-Tied photovoltaic (PV) inverters. These include implementations such as the H5, H6, and HERIC topologies, among others. In this paper, a new full bridge topology synthesis method, called...... the MN synthesis method, is proposed. The MN method introduces two criteria that can be used to synthesize all of the possible topologies, including the existing topologies as well as new simplified topologies. This method concludes that there are only 15 simplified topologies available. Most simplified...... topologies from MN method have been verified by existing papers and patents....

Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

Science.gov (United States)

Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

2008-01-01

Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

Frostbite in ski boots for marines

NARCIS (Netherlands)

Heus, R.; Schols, E.; Kistemaker, L.

2005-01-01

Previous research have showed that cold injuries of feet occur more often than cold injuries of hands. Recently, an unexpectedly large number of cold injuries were observed during military training in Norway and a relationship between cold injuries and the use of the Alico ski boot was suspected.

High performance multi-finger MOSFET on SOI for RF amplifiers

Science.gov (United States)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

A Pediatric Cardiology Fellowship Boot Camp improves trainee confidence.

Science.gov (United States)

Allan, Catherine K; Tannous, Paul; DeWitt, Elizabeth; Farias, Michael; Mansfield, Laura; Ronai, Christina; Schidlow, David; Sanders, Stephen P; Lock, James E; Newburger, Jane W; Brown, David W

2016-12-01

Introduction New paediatric cardiology trainees are required to rapidly assimilate knowledge and gain clinical skills to which they have limited or no exposure during residency. The Pediatric Cardiology Fellowship Boot Camp (PCBC) at Boston Children's Hospital was designed to provide incoming fellows with an intensive exposure to congenital cardiac pathology and a broad overview of major areas of paediatric cardiology practice. The PCBC curriculum was designed by core faculty in cardiac pathology, echocardiography, electrophysiology, interventional cardiology, exercise physiology, and cardiac intensive care. Individual faculty contributed learning objectives, which were refined by fellowship directors and used to build a programme of didactics, hands-on/simulation-based activities, and self-guided learning opportunities. A total of 16 incoming fellows participated in the 4-week boot camp, with no concurrent clinical responsibilities, over 2 years. On the basis of pre- and post-PCBC surveys, 80% of trainees strongly agreed that they felt more prepared for clinical responsibilities, and a similar percentage felt that PCBC should be offered to future incoming fellows. Fellows showed significant increase in their confidence in all specific knowledge and skills related to the learning objectives. Fellows rated hands-on learning experiences and simulation-based exercises most highly. We describe a novel 4-week-long boot camp designed to expose incoming paediatric cardiology fellows to the broad spectrum of knowledge and skills required for the practice of paediatric cardiology. The experience increased trainee confidence and sense of preparedness to begin fellowship-related responsibilities. Given that highly interactive activities were rated most highly, boot camps in paediatric cardiology should strongly emphasise these elements.

Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors

Directory of Open Access Journals (Sweden)

Shaohua Yan

2018-06-01

Full Text Available Since the discovery of the giant magnetoresistive (GMR effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost. The full Wheatstone-bridge-based GMR sensor is most useful in terms of the application point of view. However, its manufacturing process is usually complex. In this paper, we present an efficient and concise approach to fabricate a full Wheatstone-bridge-based angular GMR sensor by depositing one GMR film stack, utilizing simple patterned processes, and a concise post-annealing procedure based on a special layout. The angular GMR sensor is of good linear performance and achieves a sensitivity of 0.112 mV/V/Oe at the annealing temperature of 260 °C in the magnetic field range from −50 to +50 Oe. This work provides a design and method for GMR-sensor manufacturing that is easy for implementation and suitable for mass production.

Effects of Lightning Injection on Power-MOSFETs

Science.gov (United States)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Measurement of Gamma Knife registered helmet factors using MOSFETs

International Nuclear Information System (INIS)

Kurjewicz, Laryssa; Berndt, Anita

2007-01-01

The relative dose rate for the different Gamma Knife registered helmets (4, 8, 14, and 18 mm) is characterized by their respective helmet factors. Since the plateau of the dose profile for the 4 mm helmet is at most 1 mm wide, detector choices are limited. Traditionally helmet factors have been measured using 1x1x1 mm 3 thermoluminescent dosimeters (TLDs). However, these are time-consuming, cumbersome measurements. This article investigates the use of metal-oxide-semiconductor field effect transistors (MOSFETs) (active area of 0.2x0.2 mm 2 ) as a more accurate and convenient dosimeter. Their suitability for these measurements was confirmed by basic characterization measurements. Helmet factors were measured using both MOSFETs and the established TLD approach. A custom MOSFET cassette was designed in analogy to the Elekta TLD cassette (Elekta Instruments AB) for use with the Elekta dosimetry sphere. Although both dosimeters provided values within 3% of the manufacturer's suggestion, MOSFETs provided superior accuracy and precision, in a fraction of the time required for the TLD measurements. Thus, MOSFETs proved to be a reasonable alternative to TLDs for performing helmet factor measurements

Performance analysis of SOI MOSFET with rectangular recessed channel

Science.gov (United States)

Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

2016-03-01

In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

Pneumatic sequential-compression boots compared with aspirin prophylaxis of deep-vein thrombosis after total knee arthroplasty.

Science.gov (United States)

Haas, S B; Insall, J N; Scuderi, G R; Windsor, R E; Ghelman, B

1990-01-01

This prospective, randomized study was undertaken to compare the effectiveness of pneumatic sequential-compression boots with that of aspirin in preventing deep-vein thrombosis after total knee arthroplasty. Patients were randomly assigned to one of two prophylactic regimens: compression boots or aspirin. One hundred and nineteen patients completed the study. Seventy-two patients had unilateral arthroplasty and forty-seven, one-stage bilateral arthroplasty. In the unilateral group, the incidence of deep-vein thrombosis was 22 per cent for the patients who used compression boots compared with 47 per cent for those who received aspirin (p less than 0.03). In the bilateral group, the incidence of deep-vein thrombosis was 48 per cent for the patients who used compression boots compared with 68 per cent for those who received aspirin (p less than 0.20). The results confirm the effectiveness of compression boots in the treatment of patients who have had unilateral total knee arthroplasty. Despite the use of compression boots, however, patients who had bilateral arthroplasty were at greater risk for the development of deep-vein thrombosis.

Hemispherand-Strapped Calix[4]pyrrole: An Ion-pair Receptor for the Recognition and Extraction of Lithium Nitrite.

Science.gov (United States)

He, Qing; Zhang, Zhan; Brewster, James T; Lynch, Vincent M; Kim, Sung Kuk; Sessler, Jonathan L

2016-08-10

The hemispherand-strapped calix[4]pyrrole (1) acts as an ion pair receptor that exhibits selectivity for lithium salts. In organic media (CD2Cl2 and CD3OD, v/v, 9:1), receptor 1 binds LiCl with high preference relative to NaCl, KCl, and RbCl. DFT calculations provided support for the observed selectivity. Single crystal structures of five different lithium ion-pair complexes of 1 were obtained. In the case of LiCl, a single bridging water molecule between the lithium cation and chloride anion was observed, while tight contact ion pairs were observed in the case of the LiBr, LiI, LiNO3, and LiNO2 salts. Receptor 1 proved effective as an extractant for LiNO2 under both model solid-liquid and liquid-liquid extraction conditions.

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

2014-01-01

The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity.

Science.gov (United States)

Kohno, Ryosuke; Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

2012-03-08

When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve for a mono-energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMC(MOSFET)). The SMC(MOSFET) output value at an arbitrary point was compared with the value obtained by the conventional SMC(PPIC), which calculates proton dose distributions by using the depth-dose curve determined by a parallel-plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMC(PPIC) results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector.

[Fractures of the lower extremity in skiing - the influence of ski boots and injury pattern].

Science.gov (United States)

Bürkner, A; Simmen, H P

2008-12-01

Though the injury patterns of the lower extremities in skiing have changed since 1970, tibial fractures remain daily work of hospitals near ski slopes. A lot of medical studies have analysed the relevance of well adjusted bindings of the common lesions of the knee joint ligaments. However the influence of the flexibility of the ski boot and the injury pattern has been neglected. 49 tibial fractures have been analysed in a hospital near a large ski resort in the alpes. All fractures occurred during alpine skiing. The type of the fracture, according to the AO-classification and the injury pattern have been documented. Also demographic data, ski experience and specification concerning the ski boot have been questioned. The type of the ski boot and the grade of flexibility, have been documented if possible. It has also been recorded whether the binding opened. In contrast to other studies our patients are represented in widely spread age-groups with a large share of elderly and experienced persons. Young or unexperienced sportsmen suffer primarily from fractures of the tibial diaphysis. With increasing skiing experience the injury pattern is widening on the whole leg. 62 % of all fractures are caused by rotation traumas. Compression, dorsal forces and direct collisions are the other causes. In 59 % of all accidents the binding failed to open. There is an increased risk of complex fractures in the proximal or distal epiphysis if the binding has not opened. 23 % of all fractures occurred with rented ski boots. Only 16 % of all ski boots are labelled with a flexibility index. There is no standardized value for the flexibility of ski boots. The trend can be derived that rigid ski boots with a high flexibility index cause above all fractures of the diaphysis. 10 % of all fractures happened to patients wearing "snowblades". These short skis without safety bindings contributed a considerable share to tibial fractures, even though there is no big leverage. Tibial fractures are

Energy dependence corrections to MOSFET dosimetric sensitivity

International Nuclear Information System (INIS)

Cheung, T.; Yu, P.K.N.; Butson, M.J.; Illawarra Cancer Care Centre, Crown St, Wollongong

2009-01-01

Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to reading to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

Energy dependence corrections to MOSFET dosimetric sensitivity.

Science.gov (United States)

Cheung, T; Butson, M J; Yu, P K N

2009-03-01

Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

Performance analysis of SOI MOSFET with rectangular recessed channel

International Nuclear Information System (INIS)

Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

2016-01-01

In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

Compact MOSFET models for VLSI design

CERN Document Server

Bhattacharyya, A B

2009-01-01

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI.

Characterization of commercial MOSFETS electron dosimetry

International Nuclear Information System (INIS)

Carvajal, M. A.; Simancas, F.; Guirado, D.; Banqueri, J.; Vilches, M.; Lallena, A. M.; Palma, A. J.

2011-01-01

In recent years there have been commercial dosimetry devices based on transistors Metal-Oxide-Semiconductor (MOSFET) having a number of advantages over traditional systems for dosimetry in medical applications. These include the portability of the sensor element and a reading process quick and relatively simple dose, linearity, and so on. The use of electron beams is important in modern radiotherapy include its use in intra-operative radiotherapy (RIO). This paper presents an initial characterization of different business models MOSFET, not specific for radiation detection, to demonstrate their potential as sensors for electron beam dosimetry. (Author)

Leukaemia incidence among workers in the shoe and boot manufacturing industry: a case-control study

Directory of Open Access Journals (Sweden)

Forand Steven P

2004-08-01

Full Text Available Abstract Background Previous reports have indicated an excess of leukaemia in Broome County, New York, particularly in the Town of Union. Surveillance of cancer incidence data indicates that a large proportion of these cases occurred among males ages 65 and older. Shoe and boot manufacturing has been the largest single industry in this area throughout much of the past century. Occupational studies from Europe suggest a link between leukaemia and employment in the shoe and boot manufacturing industry. However, researchers have not found a positive association between leukaemia and employment in the shoe industry among workers in the United States. Methods A matched case-control study was conducted to investigate the association between leukaemia incidence among males 65 and older and employment in the shoe and boot manufacturing industry. Thirty-six cases of leukaemia occurring between 1981–1990; among males age 65 and older; residing in the town of Union met the study case criteria. Death certificates were obtained for each of the cases. These were matched to death certificates of 144 controls on date of death and date of birth +/- 1 year. Death certificates were then examined to determine the employer and occupation of each study subject. Conditional logistic regression was used to determine the risk of leukaemia among those working in the industry. Results The risk of both leukaemia (OR = 1.47; 95% CI 0.70, 3.09 and acute myeloid leukaemia (OR = 1.19; 95% CI 0.33, 4.28 were elevated among those employed in the shoe and boot manufacturing industry, however neither was statistically significant. Conclusion The results, though suggestive of an association between leukaemia and employment in the shoe and boot manufacturing industry, were not statistically conclusive due mainly to limited study power. Several additional limitations may also have prevented the observance of more conclusive findings. Better exposure assessment, information on

Nonremovable, windowed, fiberglass cast boot in the treatment of diabetic plantar ulcers: efficacy, safety, and compliance.

Science.gov (United States)

Ha Van, Georges; Siney, Hubert; Hartmann-Heurtier, Agnes; Jacqueminet, Sophie; Greau, Françoise; Grimaldi, André

2003-10-01

To compare the efficacy, safety, and compliance of a nonremovable fiberglass cast boot and off-loading shoes in the treatment of diabetic plantar ulcers. Patients (n = 93) with noninfected, nonischemic plantar ulcers were included in this prospective nonrandomized study. Treatment used a nonremovable fiberglass cast boot for longer standing and deeper ulcers (n = 42) and a half shoe or heel-relief shoe for other ulcers (n = 51). We evaluated off-loading therapy, compliance, and complications in both groups. The healing rate was significantly higher with the cast boot than with the off-loading shoe (81 vs. 70%, P = 0.017), with healing times of 68.6 +/- 35.1 vs. 134.2 +/- 133.0 days, respectively, and hazard ratio 1.68 (95% CI 1.04-2.70); complete compliance with treatment was 98 vs. 10% (P = 0.001), respectively. Secondary osteomyelitis developed in 3 patients in the cast boot group and 13 patients in the off-loading shoe group (P = 0.026). A nonremovable fiberglass cast boot was effective in healing diabetic plantar ulcers and in decreasing the risk of secondary osteomyelitis. The cast boot forced compliance with off-loading, thus promoting healing.

Science Skills Boot Camp Gets Interns Ready for Research | Poster

Science.gov (United States)

By Ashley DeVine, Staff Writer Summer interns learned how to read a scientific paper, present a poster, maintain a laboratory notebook, and much more, at the Science Skills Boot Camp in June. “It was a great experience, and it was a great opportunity to meet some of the other interns also working on the campus,” said Alyssa Klein, a Werner H. Kirsten student intern in the Cellular Immunology Group, Laboratory of Molecular Immunoregulation. “The boot camp covered many topics essential to being a good scientist and science researcher.”

Conduct Disorders: Are Boot Camps Effective?

Science.gov (United States)

Jeter, LaVaughn V.

2010-01-01

Youth diagnosed with "conduct disorder" are often placed in programs using forced compliance and coercive control. One type of intervention used to treat conduct disorder is the boot camp. The basic idea is that disruptive behaviors can be corrected by strict behavioral regulation and an emphasis on skills training (Weis & Toolis 2009; Weis,…

[Factors affecting the pressure distribution underneath the foot sole in ski boots].

Science.gov (United States)

Schaff, P; Kulot, M; Hauser, W; Rosemeyer, B

1988-12-01

The determination of pressure patterns underneath the footsole inside skiboots, may reveal reasons for footpain and injury risk. In our study, a new developed 72 point measuring mat was used in 5 different skiboots. Data were collected in 10 subjects in different forward flexion positions. In addition a determination of the pressure distribution over the instep was done by means of single measuring points. The results proof, that a proper adapting along the dorsum of the foot does lower the forefoot load during flexion. A tightly closed and well adapted boot will lead to a significant reduction of the total load on the footsole. High shaft models show similar pressure patterns even at earlier forward flexion angles. A pressure related discrimination between rear entry and traditional boots, that was found along the tibia, was not the case underneath the footsole. The force transmission is mainly performed along the shaft of the boot. The effect of orthotics designed mainly to support steerability of the ski, is therefore doubtful. The results may help to improve our knowledge of the interaction between boot and skier and lead, together with future field research, to a reduction of equipment related injuries.

DIRECT TUNNELLING AND MOSFET BORDER TRAPS

Directory of Open Access Journals (Sweden)

Vladimir Drach

2015-09-01

Full Text Available The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementation of the experimental setup had made it possible to complete the entire set of measurements. The schematic diagram of automated experimental setup is shown. The charging time characteristic of the ID-VG shift reveals that the charging process is a direct tunnelling process and highly bias dependent.

Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

International Nuclear Information System (INIS)

Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

2006-01-01

Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

Characteristics and performance of a micro-MOSFET: An 'imageable' dosimeter for image-guided radiotherapy

International Nuclear Information System (INIS)

Rowbottom, Carl G.; Jaffray, David A.

2004-01-01

The performance and characteristics of a miniature metal oxide semiconductor field effect transistor (micro-MOSFET) detector was investigated for its potential application to integral system tests for image-guided radiotherapy. In particular, the position of peak response to a slit of radiation was determined for the three principal axes to define the co-ordinates for the center of the active volume of the detector. This was compared to the radiographically determined center of the micro-MOSFET visible using cone-beam CT. Additionally, the angular sensitivity of the micro-MOSFET was measured. The micro-MOSFETs are clearly visible on the cone-beam CT images, and produce no artifacts. The center of the active volume of the micro-MOSFET aligned with the center of the visible micro-MOSFET on the cone-beam CT images for the x and y axes to within 0.20 mm and 0.15 mm, respectively. In z, the long axis of the detector, the peak response was found to be 0.79 mm from the tip of the visible micro-MOSFET. Repeat experiments verified that the position of the peak response of the micro-MOSFET was reproducible. The micro-MOSFET response for 360 deg. of rotation in the axial plane to the micro-MOSFET was ±2%, consistent with values quoted by the manufacturer. The location of the active volume of the micro-MOSFETs under investigation can be determined from the centroid of the visible micro-MOSFET on cone-beam CT images. The CT centroid position corresponds closely to the center of the detector response to radiation. The ability to use the cone-beam CT to locate the active volume to within 0.20 mm allows their use in an integral system test for the imaging of and dose delivery to a phantom containing an array of micro-MOSFETs. The small angular sensitivity allows the investigation of noncoplanar beams

Development of a digital solar simulator based on full-bridge converter

Science.gov (United States)

Liu, Chen; Feng, Jian; Liu, Zhilong; Tong, Weichao; Ji, Yibo

2014-02-01

With the development of solar photovoltaic, distribution schemes utilized in power grid had been commonly application, and photovoltaic (PV) inverter is an essential equipment in grid. In this paper, a digital solar simulator based on full-bridge structure is presented. The output characteristic curve of system is electrically similar to silicon solar cells, which can greatly simplify research methods of PV inverter, improve the efficiency of research and development. The proposed simulator consists on a main control board based on TM320F28335, phase-shifted zero-voltage-switching (ZVS) DC-DC full-bridge converter and voltage and current sampling circuit, that allows emulating the voltage-current curve with the open-circuit voltage (Voc) of 900V and the short-circuit current (Isc) of 18A .When the system connected to a PV inverter, the inverter can quickly track from the open-circuit to the maximum power point and keep stability.

Electrical testing of the full-scale model of the NSTX HHFW antenna array

International Nuclear Information System (INIS)

Ryan, P. M.; Swain, D. W.; Wilgen, J. B.; Fadnek, A.; Sparks, D. O.

1999-01-01

The 30 MHz high harmonic fast wave (HHFW) antenna array for NSTX consists of 12 current straps, evenly spaced in the toroidal direction. Each pair of straps is connected as a half-wave resonant loop and will be driven by one transmitter, allowing rapid phase shift between transmitters. A decoupling network using shunt stub tuners has been designed to compensate for the mutual inductive coupling between adjacent current straps, effectively isolating the six transmitters from one another. One half of the array, consisting of six full-scale current strap modules, three shunt stub decouplers, and powered by three phase-adjustable rf amplifiers had been built for electrical testing at ORNL. Low power testing includes electrical characterization of the straps, operation and performance of the decoupler system, and mapping of the rf fields in three dimensions

Method of making steel strapping and strip

Energy Technology Data Exchange (ETDEWEB)

Robert D. Reilly

2000-02-16

The technical progress obtained for this time frame consisted of the awarding of two contracts for determination of metallurgical parameters for heat treatment of strapping and strip which are unavailable from current technology and/or published data in this field. The two contractors were Bricmont, Inc. and the Department of Materials Science and Engineering at the Technological Institute of Northwestern University, Evanston, IL. Phase 1 of the two stage contract with Bricmont, Inc. which provided a computer analysis of the cooling rates of a typical range of thickness' of strapping was completed. This study was developed for the purpose of determining the time parameters for quenching low carbon steels to a martensitic microstructure within the time frame of the design of the proposed process. It also provides design criteria for cooling to ambient for the total process. This data is required for Phase 2 of the Bricmont proposal which completes the design and specifications of the total heat treating and cooling system for the process. This becomes the basis for developing the cost and space requirements for this component of the production line. The authors do not intend to award Phase 2 until the work done at Northwestern University discussed hereafter is completed. On or about May 1, 1999 a contract for a project entitled ``Effects of Steel Composition and Quench Rate on Microstructure and Mechanical Properties of Strapping'' to be performed at the Department of Materials Science and Engineering was awarded. The delay in initiating this project was due to the legal interpretation and final agreement of the intellectual provisions of the award by the author's attorneys, Northwestern's attorneys and the legal representative in the Chicago office of the DOE. The work to date includes rapid quenching of a number of different steel compositions and microstructure on an existing drop quench test apparatus. It was initially assumed that this

Effect of a patellar strap on the joint position sense of the symptomatic knee in athletes with patellar tendinopathy.

Science.gov (United States)

de Vries, Astrid J; van den Akker-Scheek, Inge; Haak, Svenja L; Diercks, Ron L; van der Worp, Henk; Zwerver, Johannes

2017-11-01

The primary aim of this study was to investigate the effect of a patellar strap on the proprioception of the symptomatic leg in PT. Secondary aims were to investigate a possible difference in effectiveness between athletes with high and low proprioceptive acuity, and whether predictors of effectiveness could be found. Randomised cross-over pilot study. 24 athletes with PT (age 27.3±9.0, VISA-P 50.6±11.2) performed a joint position sense test with and without a patellar strap. The difference between both conditions was analysed using linear mixed-model analysis. No improvement in the joint position sense using the strap for the whole group was found, while those classified as having low proprioceptive acuity did improve using the strap (p=0.015, 17.2%). A larger knee girth, longer duration of symptoms and more tendon abnormalities were negatively associated with the strap's effectiveness. The use of a patellar strap improves the knee joint proprioception - measured with joint position sense - of the symptomatic leg in athletes with poor proprioceptive acuity. Especially athletes with relatively small knee girth, short duration of symptoms and small tendon abnormalities might benefit from the strap. As proprioception plays an important role in motor control, and deficits in proprioception may put an athlete at risk for (re-)injury, these findings may be relevant for prevention as well as rehabilitation purposes in those PT athletes with low proprioceptive acuity. Copyright © 2017 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

Science.gov (United States)

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Recommendations for Longitudinal Post-Tensioning in Full-Depth Precast Concrete Bridge Deck Panels

OpenAIRE

Bowers, Susan Elizabeth

2007-01-01

Full-depth precast concrete panels offer an efficient alternative to traditional cast-in-place concrete for replacement or new construction of bridge decks. Research has shown that longitudinal post-tensioning helps keep the precast bridge deck in compression and avoid problems such as leaking, cracking, spalling, and subsequent rusting on the beams at the transverse panel joints. Current design recommendations suggest levels of initial compression for precast concrete decks in a very limit...

Noise analysis of gate electrode work function engineered recessed channel (GEWE-RC) MOSFET

International Nuclear Information System (INIS)

Agarwala, Ajita; Chaujar, Rishu

2012-01-01

This paper discusses the noise assessment, using ATLAS device simulation software, of a gate electrode work function engineered recessed channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, the behaviour of GEWE-RC MOSFET is compared with that of a conventional MOSFET having the same device parameters. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where device and noise reduction is a major concern. The noise metrics taken into consideration are: minimum noise figure and optimum source impedance. The statistical tools auto correlation and cross correlation are also analysed owing to the random nature of noise.

MOSFET Dosimetry for Evaluation of Gonad Shielding during Radiotherapy

International Nuclear Information System (INIS)

Kim, Hwi Young; Choi, Yun Seok; Park, So Yeon; Park, Yang Kyun; Ye, Sung Joon

2011-01-01

In order to confirm feasibility of MOSFET modality in use of in vivo dosimetry, evaluation of gonad shielding in order to minimize gonadal dose of patients undergoing radiotherapy by using MOSFET modality was performed. Gonadal dose of patients undergoing radiotherapy for rectal cancer in the department of radiation oncology of Seoul National University Hospital since 2009 was measured. 6 MV and 15 MV photon beams emitted from Varian 21EX LINAC were used for radiotherapy. In order to minimize exposed dose caused by the scattered ray not only from collimator of LINAC but also from treatment region inside radiation field, we used box.shaped lead shielding material. The shielding material was made of the lead block and consists of 7.5 cm x 9.5 cm x 5.5 cm sized case and 9 cm x 9.5 cm x 1 cm sized cover. Dosimetry for evaluation of gonad shielding was done with MOSFET modality. By protecting with gonad shielding material, average gonadal dose of patients was decreased by 23.07% compared with reference dose outside of the shielding material. Average delivered gonadal dose inside the shielding material was 0.01 Gy. By the result of MOSFET dosimetry, we verified that gonadal dose was decreased by using gonad shielding material. In compare with TLD dosimetry, we could measure the exposed dose easily and precisely with MOSFET modality

MOSFET Dosimetry for Evaluation of Gonad Shielding during Radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Kim, Hwi Young; Choi, Yun Seok; Park, So Yeon; Park, Yang Kyun [Seoul National University College of Medicine, Seoul (Korea, Republic of); Ye, Sung Joon [Seoul National University, Seoul (Korea, Republic of)

2011-03-15

In order to confirm feasibility of MOSFET modality in use of in vivo dosimetry, evaluation of gonad shielding in order to minimize gonadal dose of patients undergoing radiotherapy by using MOSFET modality was performed. Gonadal dose of patients undergoing radiotherapy for rectal cancer in the department of radiation oncology of Seoul National University Hospital since 2009 was measured. 6 MV and 15 MV photon beams emitted from Varian 21EX LINAC were used for radiotherapy. In order to minimize exposed dose caused by the scattered ray not only from collimator of LINAC but also from treatment region inside radiation field, we used box.shaped lead shielding material. The shielding material was made of the lead block and consists of 7.5 cm x 9.5 cm x 5.5 cm sized case and 9 cm x 9.5 cm x 1 cm sized cover. Dosimetry for evaluation of gonad shielding was done with MOSFET modality. By protecting with gonad shielding material, average gonadal dose of patients was decreased by 23.07% compared with reference dose outside of the shielding material. Average delivered gonadal dose inside the shielding material was 0.01 Gy. By the result of MOSFET dosimetry, we verified that gonadal dose was decreased by using gonad shielding material. In compare with TLD dosimetry, we could measure the exposed dose easily and precisely with MOSFET modality.

Simulation of dual-gate SOI MOSFET with different dielectric layers

Science.gov (United States)

Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

2016-04-01

The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

An oxide filled extended trench gate super junction MOSFET structure

International Nuclear Information System (INIS)

Cai-Lin, Wang; Jun, Sun

2009-01-01

This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Energy and integrated dose dependence of MOSFET dosimeter for clinical electron beams

International Nuclear Information System (INIS)

Manigandan, D.; Bharanidharan, G.; Aruna, P.; Ganesan, S.; Tamil Kumar, T.; Rai

2008-01-01

In this study, the sensitivity (mV/cGy) and integral dose dependence of a MOSFET detector for different clinical electron beams was studied. Calibrated clinical electron beams (Varian 2100) were used for the exposure. A Markus type parallel plate chamber was used for the absolute dose measurements. In order to study the sensitivity of a MOSFET, the response of the ion chamber and MOSFET for the absorbed dose of 100 cGy was measured. The sensitivity of the MOSFET was then expressed as mV/cGy. Sensitivity was measured for 4-18 MeV electron beams. (author)

The effect of a patellar strap on knee joint proprioception in healthy participants and athletes with patellar tendinopathy.

Science.gov (United States)

de Vries, Astrid J; van den Akker-Scheek, Inge; Diercks, Ron L; Zwerver, Johannes; van der Worp, Henk

2016-04-01

The primary aim of this study is to investigate the effect of the use of a patellar strap on knee joint proprioception in both healthy participants and in patients with patellar tendinopathy (PT). Secondary aims are to examine whether there is a difference in effectiveness of the use of a patellar strap between participants with low and high proprioceptive acuity and if possible predictors of effectiveness can be determined. Case-control. The threshold to detect passive motion with and without a patellar strap was assessed in 22 healthy participants and 21 unilateral PT patients. The results from the mixed model analysis show that in both groups of participants a small but statistically significant improvement in proprioception was found, primarily in those who had low proprioceptive acuity. A notable finding was that in the symptomatic leg of the PT group no improvement in proprioception by wearing a strap could be determined. Male gender and having fewer symptoms were possible predictors of effectiveness in PT patients. As proprioception plays a role in optimising movements and reducing load to joint-related structures like tendons and ligaments, it is considered an important protection mechanism. Although the improvements in proprioception as a result of wearing the strap are small, it might be that the use of a patellar strap can potentially play a role in injury prevention since poor proprioception can be a risk factor for (re)-injury. Copyright © 2015 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Comparison between Si/SiO_2 and InP/Al_2O_3 based MOSFETs

International Nuclear Information System (INIS)

Akbari Tochaei, A.; Arabshahi, H.; Benam, M. R.; Vatan-Khahan, A.; Abedininia, M.

2016-01-01

Electron transport properties of InP-based MOSFET as a new channel material with Al_2O_3 as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I_d–V_d characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I_d of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

Releveling and behavior of strap-retrofitted damaged test foundations exposed to mine subsidence

International Nuclear Information System (INIS)

Marino, G.G.

1997-01-01

Test foundation walls were constructed in an area of planned subsidence. These crawl space-sized block bearing walls were located in the tension zone of a longwall panel. The test walls were 1.2 m (40 ft) long and were vertically loaded on top with soil binds to simulate the weight of a house. As the longwall proceeded past these test foundations, subsidence movements damaged the test structures. These damaged foundations were then structurally and aesthetically repaired by using a steel strap retrofit and applying a cementitious surface coating. The repaired test foundations underwent significant subsequent subsidence as an adjacent longwall was mined beneath. The response of the repaired foundation is summarized in this paper. The steel straps were also used to relevel another set of the test foundations after they were tilted and damaged by subsidence. First, the straps were applied to the block bearing walls, and then wall jacks were used to lift the upper portion of the walls to a level position. This releveling procedure is outlined with the results

Full-Scale Measurements and System Identification on Sutong Cable-Stayed Bridge during Typhoon Fung-Wong

Directory of Open Access Journals (Sweden)

Hao Wang

2014-01-01

Full Text Available The structural health monitoring system (SHMS provides an effective tool to conduct full-scale measurements on existing bridges for essential research on bridge wind engineering. In July 2008, Typhoon Fung-Wong lashed China and hit Sutong cable-stayed bridge (SCB in China. During typhoon period, full-scale measurements were conducted to record the wind data and the structural vibration responses were collected by the SHMS installed on SCB. Based on the statistical method and the spectral analysis technique, the measured data are analyzed to obtain the typical parameters and characteristics. Furthermore, this paper analyzed the measured structural vibration responses and indicated the vibration characteristics of the stay cable and the deck, the relationship between structural vibrations and wind speed, the comparison of upstream and downstream cable vibrations, the effectiveness of cable dampers, and so forth. Considering the significance of damping ratio in vibration mitigation, the modal damping ratios of the SCB are identified based on the Hilbert-Huang transform (HHT combined with the random decrement technique (RDT. The analysis results can be used to validate the current dynamic characteristic analysis methods, buffeting calculation methods, and wind tunnel test results of the long-span cable-stayed bridges.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

Science.gov (United States)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Design, production, and testing of field effect transistors. [cryogenic MOSFETS

Science.gov (United States)

Sclar, N.

1982-01-01

Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.

Simulating single-event burnout of n-channel power MOSFET's

International Nuclear Information System (INIS)

Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

1993-01-01

Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

Application of parallel connected power-MOSFET elements to high current d.c. power supply

International Nuclear Information System (INIS)

Matsukawa, Tatsuya; Shioyama, Masanori; Shimada, Katsuhiro; Takaku, Taku; Neumeyer, Charles; Tsuji-Iio, Shunji; Shimada, Ryuichi

2001-01-01

The low aspect ratio spherical torus (ST), which has single turn toroidal field coil, requires the extremely high d.c. current like as 20 MA to energize the coil. Considering the ratings of such extremely high current and low voltage, power-MOSFET element is employed as the switching device for the a.c./d.c. converter of power supply. One of the advantages of power-MOSFET element is low on-state resistance, which is to meet the high current and low voltage operation. Recently, the capacity of power-MOSFET element has been increased and its on-state resistance has been decreased, so that the possibility of construction of high current and low voltage a.c./d.c. converter with parallel connected power-MOSFET elements has been growing. With the aim of developing the high current d.c. power supply using power-MOSFET, the basic characteristics of parallel operation with power-MOSFET elements are experimentally investigated. And, the synchronous rectifier type and the bi-directional self commutated type a.c./d.c. converters using parallel connected power-MOSFET elements are proposed

MCT/MOSFET Switch

Science.gov (United States)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Dosimetric evaluation of a new OneDose MOSFET for Ir-192 energy

International Nuclear Information System (INIS)

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Deshpande, Deepak D

2006-01-01

The purpose of this study was to investigate dosimetry (reproducibility, energy correction, relative response with distance from source, linearity with threshold dose, rate of fading, temperature and angular dependence) of a newly designed OneDose TM MOSFET patient dosimetry system for use in HDR brachytherapy with Ir-192 energy. All measurements were performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min post-irradiation to minimize fading effects. All dosimeters gave reproducible readings with mean deviation of 1.8% (SD 0.4) and 2.4% (SD 0.6) for 0 0 and 180 0 incidences, respectively. The mean energy correction factor was found to be 1.1 (range 1.06-1.12). Overall, there was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel plate ion chamber. Linear dose response with threshold voltage shift was observed with applied doses of 0.3 Gy-5 Gy with Ir-192 energy. Linearity (R 2 = 1) was observed in the MOSFET signal with the applied dose range of 0.3 Gy-5 Gy with Ir-192 energy. Fading effects were less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period of 1 month. The MOSFET response was found to be decreased by approximately 1.5% at 37 deg. C compared to 20 deg. C. The isotropic response of the MOSFET was found to be within ±6%. A maximum deviation of 5.5% was obtained between 0 deg. and 180 deg. for both the axes and this should be considered in clinical applications. The small size, cable-less, instant readout, permanent storage of dose and ease of use make the MOSFET a novel dosimeter and beneficial to patients for skin dose measurements with HDRBT using an Ir-192 source compared to the labour demanding and time-consuming TLDs

SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

Science.gov (United States)

Tang, Zhaohuan; Fu, Xinghua; Yang, Fashun; Tan, Kaizhou; Ma, Kui; Wu, Xue; Lin, Jiexing

2017-12-01

Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs. Project supported by the National Natural Science Foundation of China (No. 61464002), the Grand Science and Technology Special Project in Guizhou Province of China (No. [2015]6006), and the Ministry of Education Open Foundation for Semiconductor Power Device Reliability (No. 010201).

The First Neurosurgery Boot Camp in Southeast Asia: Evaluating Impact on Knowledge and Regional Collaboration in Yangon, Myanmar.

Science.gov (United States)

Rock, Jack; Glick, Roberta; Germano, Isabelle M; Dempsey, Robert; Zervos, John; Prentiss, Tyler; Davis, Matthew; Wright, Ernest; Hlaing, Kyi; Thu, Myat; Soe, Zaw Wai; Myaing, Win

2018-05-01

For the first time in Southeast Asia, a Fundamentals of Neurosurgery Boot Camp was held at the University of Medicine 1 in Yangon, Myanmar, February 24-26, 2017. The aim of this course was to teach and train fundamental skills to neurosurgery residents. The Myanmar Neurosurgical Society, Foundation for International Education in Neurosurgery, Society for Neurological Surgeons, The University of Medicine 1 in Yangon, Myanmar, and the Henry Ford Department of Neurosurgery developed a 2-day resident training course. Day 1 activities consisted of lectures by faculty, small group case discussions, and industry-supported demonstrations of surgical techniques. Day 2 activities consisted of hands-on skill stations for common neurosurgical procedures with each station supervised by attending faculty. Written evaluations were distributed before the meeting, immediately after the meeting, and 6 months after the meeting. Boot camp attendees included 40 residents and 24 neurosurgical faculty from Myanmar, Cambodia, Nepal, Singapore, South Korea, Thailand, and Vietnam. There were 35 evaluations completed before the boot camp, 34 completed immediately after boot camp, and 20 completed 6 months after boot camp. Knowledge of participants improved from 62.75% before boot camp to 71.50% 6 months after boot camp (P = 0.046). Boot camps provide fundamental didactic and technical exposure to trainees in developed and developing countries and help standardize training in basic neurosurgical competencies, while exposing local faculty to important teaching methods. This model provides a sustainable solution to educational needs and demonstrates to local neurosurgeons how they can take ownership of the educational process. Copyright © 2018 Elsevier Inc. All rights reserved.

Soft Switching Full-Bridge PWM DC/DC Converter Using Secondary Snubber

Directory of Open Access Journals (Sweden)

Jaroslav Dudrik

2009-05-01

Full Text Available A novel full-bridge PWM DC/DCconverter with controlled secondary side rectifier usingsecondary snubber is presented in this paper.Limitation of the circulating current as well as softswitching for all power switches of the inverter isachieved for full load range from no-load to shortcircuit by using controlled rectifier and snubber on thesecondary side. Phase shift PWM control strategy isused for the converter. The principle of operation isexplained and analyzed and the experimental resultson a 1kW, 50 kHz laboratory model of the converterare presented.

Measurement of MOSFET LF Noise Under Large Signal RF Excitation

NARCIS (Netherlands)

van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram

A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of

Reliability Concerns for Flying SiC Power MOSFETs in Space

Science.gov (United States)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J-M

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Mitomo, Satoshi; Matsuda, Takuma; Murata, Koichi; Yokoseki, Takashi [Saitama University, Sakuraku (Japan); National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Ohshima, Takeshi [National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Okubo, Shuichi; Tanaka, Yuki; Kandori, Mikio; Yoshie, Toru [Sanken Electric Co., Ltd., Niiza, Saitama (Japan); Hijikata, Yasuto [Saitama University, Sakuraku (Japan)

2017-04-15

In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ΔV{sub th} of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N{sub 2}O (10%) demonstrated a higher radiation tolerance (ΔV{sub th}, channel mobility, and subthreshold swing) than with a 100% N{sub 2}O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy

International Nuclear Information System (INIS)

Kinhikar, Rajesh A.; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M.; Dhote, Dipak S.; Deshpande, Deepak D.

2009-01-01

The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.

Science.gov (United States)

Kinhikar, Rajesh A; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M; Dhote, Dipak S; Deshpande, Deepak D

2009-09-01

The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Silicon carbide MOSFET integrated circuit technology

Energy Technology Data Exchange (ETDEWEB)

Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

1997-07-16

The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

International Nuclear Information System (INIS)

Lu Jiang; Tian Xiaoli; Lu Shuojin; Zhou Hongyu; Zhu Yangjun; Han Zhengsheng

2013-01-01

The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT, which occur at different current conditions. The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor, which leads to the deterioration of the avalanche reliability of power MOSFETs. However, the results of the IGBT show two different failure behaviors. At high current mode, the failure behavior is similar to the power MOSFETs situation. But at low current mode, the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. (semiconductor devices)

The Benefits of SiC MOSFETs in a T-Type Inverter for Grid-Tie Applications

DEFF Research Database (Denmark)

Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

2016-01-01

at the expense of increased switching losses since these outer switches must now block the full DC link voltage. Silicon Carbide (SiC) MOSFET devices potentially offer substantial advantage in this context with their lower switching losses, but the benefit of replacing all switching devices in a T-Type inverter...... with SiC MOSFETs is not so clear-cut. This paper now explores this issue by presenting a detailed comparison of the use of Si and SiC devices for a three-level T-Type inverter operating in grid-tie applications. The study uses datasheet values, switching loss measurements and calibrated heat sink thermal...... power level or the switching frequency to be significantly increased for the same device losses. Hence the use of SiC MOSFETS for T-Type inverters can be seen to be an attractive and potentially cost effective alternative, since only two switching devices per phase leg need to be upgraded....

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

Science.gov (United States)

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

Science.gov (United States)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Characterisation of 10 kV 10 A SiC MOSFET

DEFF Research Database (Denmark)

Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

2015-01-01

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

Evaluation of performance of metal oxide-silicon semiconductor field effect transistor (MOSFET) dosimeter

International Nuclear Information System (INIS)

Nagashima, Hiroyuki; Sano, Naoki; Nakamura, Osamu

2001-01-01

The JARP level dosimeter is the most suitable for absorbed dose determination in radiotherapy because of its high accuracy. However, in measuring the dose of an extremely small field, a dosimeter with a smaller active region is required. The active region of the MOSFET dosimeter is very small, having a volume of just 0.02 mm 3 . In this study, we evaluated the performance of MOSFET dosimeters with two different sensitivities and examined the usefulness of the MOSFET dosimeter in stereotactic radiosurgery. Using the high-sensitivity MOSFET dosimeter, we were able to reduce the experimental error of absorbed dose (≤±1.8%), and, by correcting the sensitivity, we could use it as a field dosimeter. By turning detectors inside out, we could reduce directional dependence (≤±1.8%). Correction was necessary in the TMR determination because peak depth shifts according to the material of the detector. In the determination of the dose distribution in the penumbra, the resolution of the MOSFET detectors was equal to that of the diamond detector. In the determination of OPF for the extremely small field, better results were obtained with MOSFET than with other small detectors. The high-sensitivity MOSFET dosimeter could properly evaluate the dose of an extremely small field and will be useful in dosimetry of the maximum dose of the field center in stereotactic radiosurgery. (author)

Commissioning and characteristics of MOSFET dosimeter

International Nuclear Information System (INIS)

Gopiraj, A.; Billimagga, Ramesh S.; Rekha, M.; Ramasubramaniam, V.

2007-01-01

The verification of the dose delivered to a patient is an important part of the quality assurance in radiotherapy. Thermoluminescent dosimeters (TLDs) and semiconductor diodes were mostly used for this purpose. Recently Metal Oxide Semiconductor field effect transistors (MOSFET) have been proposed for the application in radiotherapy. Each type of detector has its own advantages and disadvantages. The TLD size is very small and therefore can be used both for measurement and dose delivered to a patient and for measurements of dose distribution in a humanoid phantom. The main disadvantages of the TLDs are the time required by the preparation procedure and the limited accuracy which depends on the experience of the user. Additionally, TLDs do not allow an immediate readout. The main disadvantages of semiconductor diodes are the necessity of using a cable which can disturb normal clinical work especially when in vivo measurements are carried out, and the necessity of applying of many correction factors to achieve high accuracy. We procured MOSFET system from Thomson and Nielsen Electronic Ltd. The reproducibility as a function of dose and linearity and calibration factor of the MOSFET detectors were measured. The effects of energy, field size and accumulated dose on the response of the detectors were investigated

Performance characteristics of a microMOSFET as an in vivo dosimeter in radiation therapy

International Nuclear Information System (INIS)

Ramaseshan, R; Kohli, K S; Zhang, T J; Lam, T; Norlinger, B; Hallil, A; Islam, M

2004-01-01

The commercially available microMOSFET dosimeter was characterized for its dosimetric properties in radiotherapy treatments. The MOSFET exhibited excellent correlation with the dose and was linear in the range of 5-500 cGy. No measurable effect in response was observed in the temperature range of 20-40 0 C. No significant change in response was observed by changing the dose rate between 100 and 600 monitor units (MU) min -1 or change in the dose per pulse. A 3% post-irradiation fading was observed within the first 5 h of exposure and thereafter it remained stable up to 60 h. A uniform energy response was observed in the therapy range between 4 MV and 18 MV. However, below 0.6 MeV (Cs-132), the MOSFET response increased with the decrease in energy. The MOSFET also had a uniform dose response in 6-20 MeV electron beams. The directional dependence of MOSFET was within ±2% for all the energies studied. The inherent build-up of the MOSFET was evaluated dosimetrically and found to have varying water equivalent thickness, depending on the energy and the side of the beam entry. At depth, a single calibration factor obtained by averaging the MOSFET response over different field sizes, energies, orientation and depths reproduced the ion chamber measured dose to within 5%. The stereotactic and the penumbral measurements demonstrated that the MOSFET could be used in a high gradient field such as IMRT. The study showed that the microMOSFET dosimeter could be used as an in vivo dosimeter to verify the dose delivery to the patient to within ±5%

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in DHR brachytherapy

International Nuclear Information System (INIS)

Haughey, A.; Coalter, G.; Mugabe, K.

2011-01-01

Full text: The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±1O%. For cervix cases 42% of measured doses agreed with the TPS within ± 10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy. (author)

An analytical gate tunneling current model for MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Kazerouni, Iman Abaspur, E-mail: imanabaspur@gmail.com; Hosseini, Seyed Ebrahim [Sabzevar Tarbiat Moallem University, Electrical and Computer Department (Iran, Islamic Republic of)

2012-03-15

Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present-generation MOSFETs is studied. In the proposed model, we calculate the electron wave function at the semiconductor-oxide interface and inversion charge by treating the inversion layer as a potential well, including some simplifying assumptions. Then we compute the gate tunneling current using the calculated wave function. The proposed model results have an excellent agreement with experimental results in the literature.

Static tilt tests of a full-sized cylindrical liquid storage tank model

International Nuclear Information System (INIS)

Sakai, F.

1988-01-01

This paper is explaining a static tilt test with a full-scaled tank model, the objects of which are the above-ground type LNG,LPG and oil storage tanks. Main points of view to investigate are as follows: Stress and deformation at each part of the tank wall, the bottom plate and the anchor straps in case that the anchor straps are very effective; Behavior in case that the anchor straps are not very effective; Behavior in case of no anchors; Influence of the roof above the shell; and Influence of the foundation rigidity under the bottom plate

A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

International Nuclear Information System (INIS)

Patil, Ganesh C; Qureshi, S

2011-01-01

In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

Science.gov (United States)

Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

2014-12-01

We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

Identifying Risk Factors of Boot Procurement: A Case Study of Stadium Australia

Directory of Open Access Journals (Sweden)

Marcus Jefferies

2012-11-01

Full Text Available Private sector input into the procurement of public works and services is continuing to increase. This has partly arisen out of a requirement for infrastructure development to be undertaken at a rate that maintains and allows growth. This has become a major challange for the construction industry that cannot be met by government alone. The emergence of Build-Own-Operate-Transfer (BOOT schemes as a response to this challange provides a means for developing the infrastructure of a country without directly impacting on the governments budgetary constraints. The concepts of BOOT are without doubt extremely complex arrangements, which bring to the construction sector risks not experienced previously. Many of the infrastructure partnerships between public and private sector in the pastare yet to provide evidence of successful completion, since few of the concession periods have expired. This paper provides an identified list of risk factors to a case study of Stadium Australia. The most significant risk associated with Stadium Australia include the bidding process, the high level of public scrutiny, post-Olympic Games facility revenue and the complicated nature of the consortium structure.  

Identifying Risk Factors of Boot Procurement: A Case Study of Stadium Australia

Directory of Open Access Journals (Sweden)

Marcus Jefferies

2012-11-01

Full Text Available Private sector input into the procurement of public works and services is continuing to increase. This has partly arisen out of a requirement for infrastructure development to be undertaken at a rate that maintains and allows growth. This has become a major challange for the construction industry that cannot be met by government alone. The emergence of Build-Own-Operate-Transfer (BOOT schemes as a response to this challange provides a means for developing the infrastructure of a country without directly impacting on the governments budgetary constraints. The concepts of BOOT are without doubt extremely complex arrangements, which bring to the construction sector risks not experienced previously. Many of the infrastructure partnerships between public and private sector in the pastare yet to provide evidence of successful completion, since few of the concession periods have expired. This paper provides an identified list of risk factors to a case study of Stadium Australia. The most significant risk associated with Stadium Australia include the bidding process, the high level of public scrutiny, post-Olympic Games facility revenue and the complicated nature of the consortium structure.

Clinical implementation of MOSFET detectors for dosimetry in electron beams

International Nuclear Information System (INIS)

Bloemen-van Gurp, Esther J.; Minken, Andre W.H.; Mijnheer, Ben J.; Dehing-Oberye, Cary J.G.; Lambin, Philippe

2006-01-01

Background and purpose: To determine the factors converting the reading of a MOSFET detector placed on the patient's skin without additional build-up to the dose at the depth of dose maximum (D max ) and investigate their feasibility for in vivo dose measurements in electron beams. Materials and methods: Factors were determined to relate the reading of a MOSFET detector to D max for 4-15 MeV electron beams in reference conditions. The influence of variation in field size, SSD, angle and field shape on the MOSFET reading, obtained without additional build-up, was evaluated using 4, 8 and 15 MeV beams and compared to ionisation chamber data at the depth of dose maximum (z max ). Patient entrance in vivo measurements included 40 patients, mostly treated for breast tumours. The MOSFET reading, converted to D max , was compared to the dose prescribed at this depth. Results: The factors to convert MOSFET reading to D max vary between 1.33 and 1.20 for the 4 and 15 MeV beams, respectively. The SSD correction factor is approximately 8% for a change in SSD from 95 to 100 cm, and 2% for each 5-cm increment above 100 cm SSD. A correction for fields having sides smaller than 6 cm and for irregular field shape is also recommended. For fields up to 20 x 20 cm 2 and for oblique incidence up to 45 deg., a correction is not necessary. Patient measurements demonstrated deviations from the prescribed dose with a mean difference of -0.7% and a standard deviation of 2.9%. Conclusion: Performing dose measurements with MOSFET detectors placed on the patient's skin without additional build-up is a well suited technique for routine dose verification in electron beams, when applying the appropriate conversion and correction factors

Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams.

Science.gov (United States)

Kumar, A Sathish; Sharma, S D; Ravindran, B Paul

2014-07-01

The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams.

MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies

International Nuclear Information System (INIS)

Cheung, T.; Yu, P.K.N.; Butson, M.J.; Illawarra Cancer Care Centre, Wollongong, NSW

2003-01-01

This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within ± 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being ± 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation. Copyright (2003) Australasian College of Physical Scientists and Engineers in Medicine

A Newly Designed Tennis Elbow Orthosis With a Traditional Tennis Elbow Strap in Patients With Lateral Epicondylitis

Science.gov (United States)

Saremi, Hossein; Chamani, Vahid; Vahab-Kashani, Reza

2016-01-01

Background Lateral epicondylitis is a common cause of pain and upper limb dysfunction. The use of counterforce straps for treatment of lateral epicondylitis is widespread. This kind of orthosis can be modified to have a greater effect on relieving pain by reducing tension on the origin of the extensor pronator muscles. Objectives To determine the immediate effects of a newly designed orthosis on pain and grip strength in patients with lateral epicondylitis. Materials and Methods Twelve participants (six men and six women) were recruited (mean age = 41 ± 6.7 years) and evaluated for pain and grip strength in three sessions. A 48-hour break was taken between each session. The first session was without any orthosis, the second session was with the new modified tennis elbow orthosis, and the third session was with a conventional tennis elbow strap. Results Both counterforce straps were effective. However, significantly more improvement was observed in pain and grip strength after using the newly modified orthosis (P < 0.05). Conclusions The newly designed strap reduces pain more effectively and improves grip strength by causing greater localized pressure on two regions with different force applications (two component vectors versus one). PMID:28180116

A Newly Designed Tennis Elbow Orthosis With a Traditional Tennis Elbow Strap in Patients With Lateral Epicondylitis.

Science.gov (United States)

Saremi, Hossein; Chamani, Vahid; Vahab-Kashani, Reza

2016-07-01

Lateral epicondylitis is a common cause of pain and upper limb dysfunction. The use of counterforce straps for treatment of lateral epicondylitis is widespread. This kind of orthosis can be modified to have a greater effect on relieving pain by reducing tension on the origin of the extensor pronator muscles. To determine the immediate effects of a newly designed orthosis on pain and grip strength in patients with lateral epicondylitis. Twelve participants (six men and six women) were recruited (mean age = 41 ± 6.7 years) and evaluated for pain and grip strength in three sessions. A 48-hour break was taken between each session. The first session was without any orthosis, the second session was with the new modified tennis elbow orthosis, and the third session was with a conventional tennis elbow strap. Both counterforce straps were effective. However, significantly more improvement was observed in pain and grip strength after using the newly modified orthosis (P < 0.05). The newly designed strap reduces pain more effectively and improves grip strength by causing greater localized pressure on two regions with different force applications (two component vectors versus one).

Glass-melting using an IGBT full-bridge resonant converter

International Nuclear Information System (INIS)

Pacheco S, J.O.; Gutierrez O, E.; Benitez R, J.S.; Martinez V, J.; Lopez C, R.

1999-01-01

This work describes the design implementation and application of a full-bridge IGBT resonant converter used to obtain glass melting. The design procedure is discussed and complete converter schematics are provided, including drivers and control circuits. A brief review of the glass properties is given, and some coupling parameters of the induction furnace are also described. A very special provision is made to the coupling charge transformer and the heat induced to the glass itself, first by conduction, followed by direct electromagnetic induction when the glass becomes a conductor. A brief analysis of electromagnetic fields, current density and power induced in the material is given. A very simple method is presented to calculate the power absorbed by the load and therefore the efficiency of the heating process. Several tests are carried out to verify the effectiveness of this method. Finally, this paper describes the design and construction of a 5 k W, 50 k Hz Full-Bridge Resonant Converter (FBRC), based on IGBT transistors and a transformer-capacitor coupled to a thermal load composed of a metal-glass cylinder. For glass makers, the benefits obtained by implementing the melting system with an IGBT-based FRBC resides on the relative simplicity of its design, the low-cost of the components, the energy transfer efficiency, and the robustness of its operation. With a proper scaling, this melting system can be used, for instance, to vitrify hazardous industrial wastes, nuclear waste, and fume ashes from melting plants or combustion systems. (Author)

Full-scale measurements and system identification on Sutong cable-stayed bridge during Typhoon Fung-Wong.

Science.gov (United States)

Wang, Hao; Tao, Tianyou; Guo, Tong; Li, Jian; Li, Aiqun

2014-01-01

The structural health monitoring system (SHMS) provides an effective tool to conduct full-scale measurements on existing bridges for essential research on bridge wind engineering. In July 2008, Typhoon Fung-Wong lashed China and hit Sutong cable-stayed bridge (SCB) in China. During typhoon period, full-scale measurements were conducted to record the wind data and the structural vibration responses were collected by the SHMS installed on SCB. Based on the statistical method and the spectral analysis technique, the measured data are analyzed to obtain the typical parameters and characteristics. Furthermore, this paper analyzed the measured structural vibration responses and indicated the vibration characteristics of the stay cable and the deck, the relationship between structural vibrations and wind speed, the comparison of upstream and downstream cable vibrations, the effectiveness of cable dampers, and so forth. Considering the significance of damping ratio in vibration mitigation, the modal damping ratios of the SCB are identified based on the Hilbert-Huang transform (HHT) combined with the random decrement technique (RDT). The analysis results can be used to validate the current dynamic characteristic analysis methods, buffeting calculation methods, and wind tunnel test results of the long-span cable-stayed bridges.

Boot Camps: A Critique and a Proposed Alternative.

Science.gov (United States)

Salerno, Anthony W.

1994-01-01

Explores origins of boot camp concept and application of its principles to juvenile delinquents. Offers eight-point critique of concept itself. Concludes with alternative: combination of intermittent incarceration (lasting at least six months and comprised of "no frills" camp for one week, followed by weekends gradually spaced further…

An Analysis of the Relationship of Military Affiliation to Demographics, New Sailor Survey Responses, and Boot Camp Success

National Research Council Canada - National Science Library

Pond, Eric L

2008-01-01

.... Recruits' military affiliation showed no significant relationship with AFQT scores, age, bonus amounts, college level, graduation rate from boot camp, number of dependents, boot camp pay grade, race...

Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study.

Science.gov (United States)

Koivisto, J; Schulze, D; Wolff, J; Rottke, D

2014-01-01

The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO(®) head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; -5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; -14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; -16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region.

Half bridge resonant converter for ignition of thermal plasmas

International Nuclear Information System (INIS)

Pena E, L.

1997-01-01

In this work the background, design, implementation and performance of a half bridge resonant converter (HBRC) used as an electronic ignition system for arc plasma torch generation is presented. The significance of the design lies in its simplicity, versatility and low cost. The system operates like a high voltage supply attached to electrodes before gaseous breakdown and like open circuit when electric arc is established. Resonant converter is implemented with a high voltage and high speed power driver intended for control the power MOSFET transistors connected in half bridge topology with L C load. The HBRC operates besides interference into domestic electric supply line (120 V, 60 Hz) as well electric measurement devices. Advantages and limitations of the converter are reviewed. Experimental impedance variation in the medium as a function of frequency operation and some experiences in striking arcs are also presented. (Author)

Examining the Effectiveness of Boot Camps: A Randomized Experiment with a Long-Term Follow Up

Science.gov (United States)

Bottcher, Jean; Ezell, Michael E.

2005-01-01

The boot camp model became a correctional panacea for juvenile offenders during the early 1990s, promising the best of both worlds--less recidivism and lower operating costs. Although there have been numerous studies of boot camp programs since that time, most have relied on nonrandomized comparison groups. The California Youth Authority's (CYA's)…

Improving Current Balance In Parallel MOSFET's

Science.gov (United States)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Numerical simulation of long-term radiation effects for MOSFETs

International Nuclear Information System (INIS)

Wei Yuan; Xie Honggang; Gong Ding; Zhu Jinhui; Niu Shengli; Huang Liuxing

2013-01-01

A coupled algorithm is introduced to simulate the long-term radiation effects of MOSFETs, which combines particle transport with semiconductor governing equations. The former is dealt with Monte-Carlo method, and the latter is solved by finite-volume method. The trapped charge in SiO 2 and the free charge in Si are both described by the drift-diffusion model, and the deposited energy by incident particles can be coupled with the continuous equations of charge, acting as a source item. The discrete form of governing equations is obtained using the finite-volume method, and the numerical solutions of these equations are the long-term radiation response result of MOSFETs. The threshold voltage shift and off-state leakage current of an irradiated MOSFET are simulated with the coupled algorithm respectively, showing a good accordance with results by other calculations. (authors)

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

International Nuclear Information System (INIS)

Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

2013-01-01

A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Formation of a vertical MOSFET for charge sensing in a Si micro-fluidic channel

International Nuclear Information System (INIS)

Lyu, Hong-Kun; Kim, Dong-Sun; Shin, Jang-Kyoo; Choi, Pyung; Lee, Jong-Hyun; Park, Hey-Jung; Park, Chin-Sung; Lim, Geun-Bae

2004-01-01

We have formed a fluidic channel that can be used in micro-fluidic systems and fabricated a 3-dimensional vertical metal-oxide semiconductor field-effect transistor (vertical MOSFET) in the convex corner of a Si micro-fluidic channel by using an anisotropic tetramethyl ammonium hydroxide (TMAH) etching solution. A Au/Cr layer was used for the gate metal and might be useful for detecting charged biomolecules. The electrical characteristics of the vertical MOSFET and its operation as a chemical sensor were investigated. At V DS = -5 V and V GS = -5 V the drain current of the device was -22.5 μA and the threshold voltage was about -1.4 V. A non-planar, non-rectangular vertical MOSFET with a trapezoidal gate was transformed into an equivalent rectangularly based one by using a Schwartz-Christoffel transformation. The LEVEL1 device parameters of the vertical MOSFET were extracted from the measured electrical device characteristics and were used in the SPICE simulation for the vertical MOSFET. The measured and the simulated results for the vertical PMOSFET showed relatively good agreement. When the vertical MOSFET was dipped into a thiol DNA solution, the drain current decreased due to charged biomolecules probably being adsorbed on the gate, which indicates that a vertical MOSFET in a Si micro-fluidic channel might be useful for sensing charged biomolecules.

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

International Nuclear Information System (INIS)

Jiang, Y; Wang, Q P; Wang, D J; Tamai, K; Li, L A; Ao, J-P; Ohno, Y; Shinkai, S; Miyashita, T; Motoyama, S-I

2014-01-01

We report the investigation of boron ion implantation as a device field isolation process for GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure. In the mesa isolation region of a bar-type MOSFET, a parasitic MOS-channel existed and widened the designed channel width, which would result in an overestimated mobility compared with a ring-type MOSFET. After boron ions implantation in the isolation region, the overestimation of field-effect mobility of bar-type MOSFETs was eliminated. The sub-threshold characteristics and on-state drain current of the bar-type MOSFETs coincide with the ring-type devices. Long-channel ring-type MOSFETs, with and without ion implantation, were fabricated on the recess region to evaluate the sub-threshold characteristics. The MOSFETs with boron ions implanted into the recess region showed a low drain current up to the gate bias of 10V. The result indicated that boron ion implantation prevented the formation of parasitic MOS-channel in the isolation region and achieved field isolation. The current–voltage characteristics of MOSFETs with the normal recess condition demonstrated no degradation of device performance after boron ions implanted into the isolation region. Boron ion implantation by further optimization can be a field isolation method for GaN MOSFETs. (paper)

Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

DEFF Research Database (Denmark)

Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

2016-01-01

The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...

Punishing Kids: The Rise of the "Boot Camp"

Science.gov (United States)

Mills, Martin; Pini, Barbara

2015-01-01

This paper is concerned with the rise of 'the boot camp' as a means of addressing "the problem of troubled youth" in contemporary industrialised nations such as Australia and the UK. Drawing on a corpus of publicly available material including press releases and policy documents, media reports, and programme websites, the paper explores…

Nasal Cancer in the Northamptonshire Boot and Shoe Industry

Science.gov (United States)

Acheson, E. D.; Cowdell, R. H.; Jolles, B.

1970-01-01

A survey of the incidence of nasal cancer in Northamptonshire during the period 1953 to 1967 is reported. Of the 46 patients with nasal cancer ascertained during the 15-year period 21 (19 males and 2 females) had been employed at some time in the boot and shoe industry. Five other cases diagnosed either before 1953 or after 1967 in persons who had worked in the boot and shoe industry in Northamptonshire were ascertained from various sources. The incidence of nasal cancer (all histological types considered together) was significantly higher in male boot and shoe operatives in Northamptonshire than in males of all occupational classes in the Cancer Register areas selected for comparison and in males working in other occupations in Northamptonshire. The excess incidence has recently given rise to the occurrence of between 1 and 2 new cases per annum in the Northamptonshire boot and shoe industry. The cases within the Northamptonshire industry occurred almost entirely in the relatively small number of workers who are exposed to the dust of the materials used in the manufacture of footwear. Possibly there are two carcinogenic factors in the industry—one related to the production of nasal adenocarcinoma, and the other to squamous and possibly other types of carcinoma in the nasal cavity and sinuses. This requires further study. Our best estimate of the latent period for the adenocarcinoma cases was 54·6 years, which is substantially longer than for the patients with squamous, transitional, and anaplastic tumours (41·7 years). We have no evidence to answer the question whether the facts are still present in the industrial environment, though undoubtedly the standards of hygiene in the industry has improved substantially since these men were first exposed. There is probably an increased risk of nasal adenocarcinoma in the footwear repairing industry, but this requires further study. Our evidence suggests that snuff taking should be considered as a possible contributory

An experimental MOSFET approach to characterize (192)Ir HDR source anisotropy.

Science.gov (United States)

Toye, W C; Das, K R; Todd, S P; Kenny, M B; Franich, R D; Johnston, P N

2007-09-07

The dose anisotropy around a (192)Ir HDR source in a water phantom has been measured using MOSFETs as relative dosimeters. In addition, modeling using the EGSnrc code has been performed to provide a complete dose distribution consistent with the MOSFET measurements. Doses around the Nucletron 'classic' (192)Ir HDR source were measured for a range of radial distances from 5 to 30 mm within a 40 x 30 x 30 cm(3) water phantom, using a TN-RD-50 MOSFET dosimetry system with an active area of 0.2 mm by 0.2 mm. For each successive measurement a linear stepper capable of movement in intervals of 0.0125 mm re-positioned the MOSFET at the required radial distance, while a rotational stepper enabled angular displacement of the source at intervals of 0.9 degrees . The source-dosimeter arrangement within the water phantom was modeled using the standardized cylindrical geometry of the DOSRZnrc user code. In general, the measured relative anisotropy at each radial distance from 5 mm to 30 mm is in good agreement with the EGSnrc simulations, benchmark Monte Carlo simulation and TLD measurements where they exist. The experimental approach employing a MOSFET detection system of small size, high spatial resolution and fast read out capability allowed a practical approach to the determination of dose anisotropy around a HDR source.

Radiation-hardened gate-around n-MOSFET structure for radiation-tolerant application-specific integrated circuits

International Nuclear Information System (INIS)

Lee, Min Su; Lee, Hee Chul

2012-01-01

To overcome the total ionizing dose effect on an n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET), we designed a radiation-hardened gate-around n-MOSFET structure and evaluated it through a radiation-exposure experiment. Each test device was fabricated in a commercial 0.35-micron complementary metal-oxide-semiconductor (CMOS) process. The fabricated devices were evaluated under a total dose of 1 Mrad (Si) at a dose rate of 250 krad/h to obtain very high reliability for space electronics. The experimental results showed that the gate-around n-MOSFET structure had very good performance against 1 Mrad (Si) of gamma radiation, while the conventional n-MOSFET experienced a considerable amount of radiation-induced leakage current. Furthermore, a source follower designed with the gate-around transistor worked properly at 1 Mrad (Si) of gamma radiation while a source follower designed with the conventional n-MOSFET lost its functionality.

First urology simulation boot camp in the United Kingdom

Directory of Open Access Journals (Sweden)

C.S. Biyani

2017-09-01

Conclusion: This first UK Urology Simulation Boot Camp has demonstrated feasibility and effectiveness in enhancing trainee’s experience. Given these positive feedbacks there is a good reason to expect that future courses will improve the overall skills of a new urology trainee.

Sensing sheet: the response of full-bridge strain sensors to thermal variations for detecting and characterizing cracks

Science.gov (United States)

Tung, S.-T.; Glisic, B.

2016-12-01

Sensing sheets based on large-area electronics consist of a dense array of unit strain sensors. This new technology has potential for becoming an effective and affordable monitoring tool that can identify, localize and quantify surface damage in structures. This research contributes to their development by investigating the response of full-bridge unit strain sensors to thermal variations. Overall, this investigation quantifies the effects of temperature on thin-film full-bridge strain sensors monitoring uncracked and cracked concrete. Additionally, an empirical formula is developed to estimate crack width given an observed strain change and a measured temperature change. This research led to the understanding of the behavior of full-bridge strain sensors installed on cracked concrete and exposed to temperature variations. It proves the concept of the sensing sheet and its suitability for application in environments with variable temperature.

Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

DEFF Research Database (Denmark)

Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

2013-01-01

integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

Comparison between Si/SiO{sub 2} and InP/Al{sub 2}O{sub 3} based MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Akbari Tochaei, A., E-mail: amirakbari182@gmail.com; Arabshahi, H.; Benam, M. R. [Payame Noor University, Department of Physics (Iran, Islamic Republic of); Vatan-Khahan, A.; Abedininia, M. [Khayyam University, Department of Physics (Iran, Islamic Republic of)

2016-11-15

Electron transport properties of InP-based MOSFET as a new channel material with Al{sub 2}O{sub 3} as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I{sub d}–V{sub d} characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I{sub d} of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

Novel power MOSFET-based expander for high frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET

Directory of Open Access Journals (Sweden)

Rawid Banchuin

2013-01-01

Full Text Available The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed. As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account. The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters. Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor. The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence. Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.

Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

Quantum Corrections to the 'Atomistic' MOSFET Simulations

Science.gov (United States)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs

International Nuclear Information System (INIS)

Liu Hongwei; Wang Runsheng; Huang Ru; Zhang Xing

2010-01-01

This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical expression for the low-field mobility is proposed, which covers the entire regime from drift-diffusion transport to quasi-ballistic transport in 1-D, 2-D and 3-D MOSFETs. Two key parameters, namely the long-channel low-field mobility (μ 0 ) and the low-field mean free path (λ 0 ), are obtained from the experimental data, and the transport mechanism transition in MOSFETs is further discussed both experimentally and theoretically. Our work shows that λ 0 is available to characterize the inherent transition of the carrier transport mechanism rather than the low-field mobility. The mobility reduces in the MOSFET with the shrinking of the channel length; however, λ 0 is nearly a constant, and λ 0 can be used as the 'entry criterion' to determine whether the device begins to operate under quasi-ballistic transport to some extent. (semiconductor devices)

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig; Wang, Xiongfei

2016-01-01

This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influ......This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then......, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance...... of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed...

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

OpenAIRE

Asenov, A.; Balasubramaniam, R.; Brown, A.R.; Davies, J.H.

2003-01-01

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on devi...

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Directory of Open Access Journals (Sweden)

Nick Baker

2017-03-01

Full Text Available In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs, it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA MOSFET using center potential

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K.P. Pradhan

2015-12-01

Full Text Available In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA MOSFET by solving the 2-D Poisson’s equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias (VDS, oxide thickness (tox, channel thickness (r, etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc.

MMC with parallel-connected MOSFETs as an alternative to wide bandgap converters for LVDC distribution networks

Directory of Open Access Journals (Sweden)

Yanni Zhong

2017-03-01

Full Text Available Low-voltage direct-current (LVDC networks offer improved conductor utilisation on existing infrastructure and reduced conversion stages, which can lead to a simpler and more efficient distribution network. However, LVDC networks must continue to support AC loads, requiring efficient, low-distortion DC–AC converters. Additionally, increasing numbers of DC loads on the LVAC network require controlled, low-distortion, unity power factor AC-DC converters with large capacity, and bi-directional capability. An AC–DC/DC–AC converter design is therefore proposed in this study to minimise conversion loss and maximise power quality. Comparative analysis is performed for a conventional IGBT two-level converter, a SiC MOSFET two-level converter, a Si MOSFET modular multi-level converter (MMC and a GaN HEMT MMC, in terms of power loss, reliability, fault tolerance, converter cost and heatsink size. The analysis indicates that the five-level MMC with parallel-connected Si MOSFETs is an efficient, cost-effective converter for low-voltage converter applications. MMC converters suffer negligible switching loss, which enables reduced device switching without loss penalty from increased harmonics and filtering. Optimal extent of parallel-connection for MOSFETs in an MMC is investigated. Experimental results are presented to show the reduction in device stress and electromagnetic interference generating transients through the use of reduced switching and device parallel-connection.

Influence of modern studded and bladed soccer boots and sidestep cutting on knee loading during match play conditions.

Science.gov (United States)

Kaila, Rajiv

2007-09-01

The influence of modern studded and bladed soccer boots and sidestep cutting on noncontact knee loading during match play conditions is not fully understood. Modern soccer boot type and sidestep cutting compared with straight-ahead running do not significantly influence knee internal tibia axial and valgus moments, anterior joint forces, and flexion angles. Controlled laboratory study. Fifteen professional male outfield soccer players undertook trials of straight-ahead running and sidestep cutting at 30 degrees and 60 degrees with a controlled approach velocity on a Fédération Internationale de Football Association (FIFA) approved soccer surface. Two bladed and 2 studded soccer boots from 2 manufacturers were investigated. Three-dimensional inverse dynamics analysis determined externally applied internal/external tibia axial and valgus/varus moments, anterior forces, and flexion angles throughout stance. The soccer boot type imparted no significant difference on knee loading for each maneuver. Internal tibia and valgus moments were significantly greater for sidestep cutting at 30 degrees and 60 degrees compared with straight-ahead running. Sidestep cutting at 60 degrees compared with straight-ahead running significantly increased anterior joint forces. Varying soccer boot type had no effect on knee loading for each maneuver, but sidestep cutting significantly increased internal tibia and valgus moments and anterior joint forces. Sidestep cutting, irrespective of the modern soccer boot type worn, may be implicated in the high incidence of noncontact soccer anterior cruciate ligament injuries by significantly altering knee loading.

Effect of boot shaft stiffness on stability joint energy and muscular co-contraction during walking on uneven surface.

Science.gov (United States)

Böhm, Harald; Hösl, Matthias

2010-09-17

Increased boot shaft stiffness may have a noticeable impact on the range of motion of the ankle joint. Therefore, the ability of the ankle joint to generate power for propulsion might be impaired. This might result in compensatory changes at the knee and hip joint. Besides, adaptability of the subtalar joint to uneven surface might be reduced, which could in turn affect stability. The aim of the study was therefore to investigate the influence of boot shaft stiffness on biomechanical gait parameters. Fifteen healthy young adults walked over coarse gravel wearing two different hiking boots that differed by 50% in passive shaft stiffness. Leg kinematics, kinetics and electromyography were measured. Gait velocity and indicators for stability were not different when walking with the hard and soft boot shaft over the gravel surface. However, the hard boot shaft decreased the ankle range of motion as well as the eccentric energy absorbed at the ankle joint. As a consequence, compensatory changes at the knee joint were observed. Co-contraction was increased, and greater eccentric energy was absorbed. Therefore, the efficiency of gait with hard boots might be decreased and joint loading at the knee might be increased, which might cause early fatigue of knee muscles during walking or hiking. The results of this study suggest that stiffness and blocking of joint motion at the ankle should not be equated with safety. A trade-off between lateral stiffness and free natural motion of the ankle joint complex might be preferable.

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

International Nuclear Information System (INIS)

Li Cong; Zhuang Yi-Qi; Zhang Li; Jin Gang

2014-01-01

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson's equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD

Modification of transition's factor in the compact surface-potential-based MOSFET model

Directory of Open Access Journals (Sweden)

Kevkić Tijana

2016-01-01

Full Text Available The modification of an important transition's factor which enables continual behavior of the surface potential in entire useful range of MOSFET operation is presented. The various modifications have been made in order to obtain an accurate and computationally efficient compact MOSFET model. The best results have been achieved by introducing the generalized logistic function (GL in fitting of considered factor. The smoothness and speed of the transition of the surface potential from the depletion to the strong inversion region can be controlled in this way. The results of the explicit model with this GL functional form for transition's factor have been verified extensively with the numerical data. A great agreement was found for a wide range of substrate doping and oxide thickness. Moreover, the proposed approach can be also applied on the case where quantum mechanical effects play important role in inversion mode.

Effects of load carriage and work boots on lower limb kinematics of industrial workers.

Science.gov (United States)

Tian, Miao; Park, Huiju; Li, Jun; Koo, Heekwang; Xu, Qinwen

2017-08-09

Load and footwear condition are two crucial elements varying the kinematic responses during walking, which probably lead to chronic injury. Fifteen healthy male individuals with no obvious gait abnormalities participated in this study. Apart from a no-load condition, four external load conditions with two load levels were investigated. Work boots were compared with running shoes to determine footwear effects. Significant impacts were found for lower limb range of motion at certain joints when carrying loads. A greater hip and ankle flexion-extension while wearing the work boots indicated that participants needed to lift the leg higher to complete toe clearance off the walking surface. Work boots also increased the vertical excursion of the center of body mass, which may impact body balance and induce falling. No significant influencing pattern of carrying modes was found, which was probably due to the light load and relatively stable mode of shoulder carrying.

Physiological responses to simulated stair climbing in professional firefighters wearing rubber and leather boots.

Science.gov (United States)

Huang, Chun-Jung; Garten, Ryan S; Wade, Chip; Webb, Heather E; Acevedo, Edmund O

2009-09-01

No studies have considered whether a firefighter's boots are a factor influencing physiological responses. The purpose of this study was to examine physiological responses to a fire simulation activity (stair climb) in professional firefighters wearing rubber boots (RB) and leather boots (LB). Twelve professional firefighters participated in two counterbalanced simulated firefighter stair climb (SFSC) sessions, one wearing RB and the other wearing LB. Heart rate, oxygen uptake (VO(2)), expiratory ventilation (V(E)), blood lactate (BLa), salivary cortisol (SCORT), and leg strength were assessed prior to and following a SFSC. LB elicited significantly greater SCORT values and knee flexion time to peak torque. Furthermore, RB revealed significantly greater ankle dorsiflexion peak torque after SFSC. BLa was positively related to knee flexion peak torque after SFSC in the RB. Firefighters when wearing the RB may be more effective at resisting fatigue and increase more force production.

Analytical drift-current threshold voltage model of long-channel double-gate MOSFETs

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Wang, Jhong-Sheng

2009-01-01

This paper presents a new, physical threshold voltage model to solve the ambiguity in determining the threshold voltage of double-gate (DG) MOSFETs. To avoid the difficulties of the conventional 2ψ B model in nearly undoped DG MOSFETs, this study proposes to define the on–off switching based on the actual roles of the drift and diffusion components in the total drain current. The drift current strongly enhances beyond the threshold voltage, while the diffusion current plays a major role in the subthreshold. The threshold voltage is defined as the drift component that exceeds the diffusion counterpart. From the solutions of Poisson's equation, the drift and diffusion currents of DG MOSFETs are separately formulated to derive the analytical expressions of the threshold voltage and associated threshold current. This model provides a comprehensive description of the switching behavior of DG MOSFET devices, and offers a physical onset threshold current to determine the threshold voltage in practical extraction

Comparative study on skin dose measurement using MOSFET and TLD for pediatric patients with acute lymphatic leukemia.

Science.gov (United States)

Al-Mohammed, Huda I; Mahyoub, Fareed H; Moftah, Belal A

2010-07-01

The object of this study was to compare the difference of skin dose measured in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using metal oxide semiconductor field-effect transistors (mobile MOSFET dose verification system (TN-RD-70-W) and thermoluminescent dosimeters (TLD-100 chips, Harshaw/ Bicron, OH, USA). Because TLD has been the most-commonly used technique in the skin dose measurement of TBI, the aim of the present study is to prove the benefit of using the mobile MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements during the total body irradiation (TBI) over thermoluminescent dosimeters (TLD). The measurements involved 10 pediatric patients ages between 3 and 14 years. Thermoluminescent dosimeters and MOSFET dosimetry were performed at 9 different anatomic sites on each patient. The present results show there is a variation between skin dose measured with MOSFET and TLD in all patients, and for every anatomic site selected, there is no significant difference in the dose delivered using MOSFET as compared to the prescribed dose. However, there is a significant difference for every anatomic site using TLD compared with either the prescribed dose or MOSFET. The results indicate that the dosimeter measurements using the MOSFET gave precise measurements of prescribed dose. However, TLD measurement showed significant increased skin dose of cGy as compared to either prescribed dose or MOSFET group. MOSFET dosimeters provide superior dose accuracy for skin dose measurement in TBI as compared with TLD.

The 'bridging sign', a MR finding for combined full-thickness tears of the subscapularis tendon and the supraspinatus tendon

International Nuclear Information System (INIS)

Jung, Jin Young; Yoon, Young Cheol; Cha, Dong Ik; Yoo, Jae-Chul; Jung, Jee Young

2013-01-01

Background: In daily practice, we discovered one of the secondary magnetic resonance (MR) findings of the subscapularis (SSC) tendon tear, the 'bridging sign', which has not been previously described. Purpose: To describe the 'bridging sign' on shoulder MR imaging and its radiological and clinical significance in patients with SSC tendon tear. Material and Methods: Twenty-nine patients who had undergone shoulder arthroscopy and had full-thickness tear of the subscapularis tendon were enrolled. The medical records of the 29 patients were retrospectively reviewed for the duration of shoulder pain, rotator cuff tears, and associated arthroscopic findings: biceps tendon abnormality and superior glenoid labral tear. Then, preoperative shoulder MR images were retrospectively reviewed for the presence or absence of the 'bridging sign' and associated MR findings: periarticular fluid and fatty atrophy of the supraspinatus and subscapularis muscles. The type of rotator cuff tear associated with the 'bridging sign' was assessed and the sensitivity, specificity, and accuracy of the 'bridging sign' for the diagnosis of a certain type of rotator cuff tear were calculated. Associated arthroscopic and MR findings and mean duration of the shoulder pain between the patients with and without the 'bridging sign' were compared. Results: The 'bridging sign' was seen in 17 of 29 patients and corresponded to a complex of the torn and superomedially retracted subscapularis tendon, coracohumeral ligament, and superior glenohumeral ligament, adhered to the anterior margin of the torn supraspinatus (SSP) tendon on arthroscopy. All patients with the 'bridging sign' had combined full-thickness tear (FTT) of the cranial 1/2 portion of the subscapularis tendon and anterior 1/2 portion of the SSP tendon. The sensitivity, specificity, and accuracy of the 'bridging sign' for the diagnosis of combined FTTs of the SSC tendon and anterior portion of the SSP tendon were 81.0%, 100%, and 86

An analytical drain current model for symmetric double-gate MOSFETs

Science.gov (United States)

Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

2018-04-01

An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

A FULL-SCALE MEASUREMENT OF WIND ACTIONS AND EFFECTS ON A SEA-CROSSING BRIDGE

Directory of Open Access Journals (Sweden)

Yi Zhou

2017-10-01

Full Text Available Wind loading is critical for the large-span and light-weight structures, and field measurement is the most effective way to evaluate the wind resistance performance of a specific structure. This study investigates the wind characteristics and wind-induced vibration on a sea-crossing bridge in China, namely Donghai Bridge, based on up to six years of monitoring data. It is found that: (1 there exists obvious discrepancy between the measured wind field parameters and the values suggested by the design code; and the wind records at the bridge site is easily interfered by the bridge structure itself, which should be considered in interpreting the measurements and designing structural health monitoring systems (SHMS; (2 for strong winds with high non-stationarity, a shorter averaging time than 10-min is preferable to obtain more stable turbulent wind characteristics; (3 the root mean square (RMS of the wind-induced acceleration of the girder may increase in an approximately quadratic curve relationship with the mean wind speed; and (4 compared to traffic load, the wind dominates the girder’s lateral vibration amplitude, while the heavy-load traffic might exert more influence on the girder’s vertical and torsional vibrations than the high winds. This study provides field evidence for the wind-resistant design and evaluation of bridges in similar operational conditions.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

Science.gov (United States)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

Energy Technology Data Exchange (ETDEWEB)

Luo, Guang-Wen; Qi, Zhen-Yu, E-mail: qizhy@sysucc.org.cn; Deng, Xiao-Wu [Department of Radiation Oncology, Sun Yat-Sen University Cancer Center and State Key Laboratory of Oncology in Southern China, Collaborative Innovation Center of Cancer Medicine, Guangzhou 510060 (China); Rosenfeld, Anatoly [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522 (Australia)

2014-05-15

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

Science.gov (United States)

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-05-01

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

International Nuclear Information System (INIS)

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-01-01

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd max using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic

Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Science.gov (United States)

Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

2016-10-01

In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

Science.gov (United States)

2016-02-04

AFRL-AFOSR-JP-TR-2016-0037 Device Performance and Reliablity Improvements of AlGaBN/GaN/Si MOSFET Robert Wallace UNIVERSITY OF TEXAS AT DALLAS Final...GaN/Si MOSFET 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-14-1-4069 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Robert Wallace 5d.  PROJECT...AOARD Grant FA2386-14-1-4069 Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET US 12 month extension (2014 – 2015) for current

First nondestructive measurements of power MOSFET single event burnout cross sections

International Nuclear Information System (INIS)

Oberg, D.L.; Wert, J.L.

1987-01-01

A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

Science.gov (United States)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-03-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

International Nuclear Information System (INIS)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-01-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m /I D , etc) for the sub-100 nm technologies

MOSFET Power Controller

Science.gov (United States)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

Impact of compression therapy using Unna's boot on the self-esteem of patients with venous leg ulcers.

Science.gov (United States)

Salome, G M; de Brito, M J A; Ferreira, L M

2014-09-01

To assess self-esteem in patients with venous leg ulcers treated with Unna's boot. • A descriptive, analytic, clinical study was conducted from June 2010 to May 2011 in an outpatient wound care clinic in São Paulo, Brazil. Patients of both sexes, aged ≥18 years, who had had a venous leg ulcer for more than one year and a Doppler ankle brachial index ranging from 0.8-1.0 were consecutively selected for inclusion. Patients were treated with wound dressings and Unna's boot. Self-esteem was assessed using the Brazilian version of the Rosenberg Self-Esteem Scale (RSE) at inclusion (baseline) and after 4, 8, and 12 months of compression therapy using Unna's boot. The scale is reverse-scored; thus lower scores indicate higher levels of self-esteem. • The patients showed a slight but significant improvement in self-esteem after 4 months of treatment (mean RSE score=17.12) compared with baseline (mean RSE score=24.90). However, a marked and significant improvement in self-esteem was observed after 8 months (mean RSE score=7.40) and 12 months (mean RSE score=2.10) of compression therapy using Unna's boot. • Patients with venous leg ulcers treated with Unna's boot for 12 months showed a significant improvement in self-esteem • All authors declare that no competing financial interests exist. There was no external funding for this study.

SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

Energy Technology Data Exchange (ETDEWEB)

Ganesan, B; Prakasarao, A; Singaravelu, G [Anna University, Chennai, TamilNadu (India); Palraj, T; Rai, R [Dr. Rai Memorial Cancer Institute, Chennai, TamilNadu (India)

2016-06-15

Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

International Nuclear Information System (INIS)

Ganesan, B; Prakasarao, A; Singaravelu, G; Palraj, T; Rai, R

2016-01-01

Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

Studies on a Hybrid Full-Bridge/Half-Bridge Bidirectional CLTC Multi-Resonant DC-DC Converter with a Digital Synchronous Rectification Strategy

Directory of Open Access Journals (Sweden)

Shu-huai Zhang

2018-01-01

Full Text Available This study presents a new bidirectional multi-resonant DC-DC converter, which is named CLTC. The converter adds an auxiliary transformer and an extra resonant capacitor based on a LLC resonant DC-DC converter, achieving zero-voltage switching (ZVS for the input inverting switches and zero-current switching (ZCS for the output rectifiers in all load range. The converter also has a wide gain range in two directions. When the load is light, a half-bridge configuration is adopted instead of a full-bridge configuration to solve the problem of voltage regulation. By this method, the voltage gain becomes monotonous and controllable. Besides, the digital synchronous rectification strategy is proposed in forward mode without adding any auxiliary circuit. The conduction time of synchronous rectifiers equals the estimation value of body diodes’ conduction time with the lightest load. Power loss analysis is also conducted in different situations. Finally, the theoretical analysis is validated by a 5 kW prototype.

Angular dependence of the MOSFET dosimeter and its impact on in vivo surface dose measurement in breast cancer treatment.

Science.gov (United States)

Qin, S; Chen, T; Wang, L; Tu, Y; Yue, N; Zhou, J

2014-08-01

The focus of this study is the angular dependence of two types of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeters (MOSFET20 and OneDose/OneDosePlus) when used for surface dose measurements. External beam radiationat different gantry angles were delivered to a cubic solid water phantom with a MOSFET placed on the top surface at CAX. The long axis of the MOSFET was oriented along the gantry axis of rotation, with the dosimeter (bubble side) facing the radiation source. MOSFET-measured surface doses were compared against calibrated radiochromic film readings. It was found that both types of MOSFET dosimeters exhibited larger than previously reported angular dependence when measuring surface dose in beams at large oblique angles. For the MOSFET20 dosimeter the measured surface dose deviation against film readings was as high as 17% when the incident angle was 72 degrees to the norm of the phantom surface. It is concluded that some MOSFET dosimeters may have a strong angular dependence when placed on the surface of water-equivalent material, even though they may have an isotropic angular response when surrounded by uniform medium. Extra on-surface calibration maybe necessary before using MOSFET dosimeters for skin dose measurement in tangential fields.

Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation

NARCIS (Netherlands)

van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram

2002-01-01

A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise under large signal RF (Radio Frequency) excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does

Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

CERN Document Server

Gerardin, S; Cornale, D; Ding, L; Mattiazzo, S; Paccagnella, A; Faccio, F; Michelis, S

2015-01-01

We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

2013-01-01

Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

BootGraph: probabilistic fiber tractography using bootstrap algorithms and graph theory.

Science.gov (United States)

Vorburger, Robert S; Reischauer, Carolin; Boesiger, Peter

2013-02-01

Bootstrap methods have recently been introduced to diffusion-weighted magnetic resonance imaging to estimate the measurement uncertainty of ensuing diffusion parameters directly from the acquired data without the necessity to assume a noise model. These methods have been previously combined with deterministic streamline tractography algorithms to allow for the assessment of connection probabilities in the human brain. Thereby, the local noise induced disturbance in the diffusion data is accumulated additively due to the incremental progression of streamline tractography algorithms. Graph based approaches have been proposed to overcome this drawback of streamline techniques. For this reason, the bootstrap method is in the present work incorporated into a graph setup to derive a new probabilistic fiber tractography method, called BootGraph. The acquired data set is thereby converted into a weighted, undirected graph by defining a vertex in each voxel and edges between adjacent vertices. By means of the cone of uncertainty, which is derived using the wild bootstrap, a weight is thereafter assigned to each edge. Two path finding algorithms are subsequently applied to derive connection probabilities. While the first algorithm is based on the shortest path approach, the second algorithm takes all existing paths between two vertices into consideration. Tracking results are compared to an established algorithm based on the bootstrap method in combination with streamline fiber tractography and to another graph based algorithm. The BootGraph shows a very good performance in crossing situations with respect to false negatives and permits incorporating additional constraints, such as a curvature threshold. By inheriting the advantages of the bootstrap method and graph theory, the BootGraph method provides a computationally efficient and flexible probabilistic tractography setup to compute connection probability maps and virtual fiber pathways without the drawbacks of

Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

2012-01-01

Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

Directory of Open Access Journals (Sweden)

K.E. Kaharudin

2015-12-01

Full Text Available This paper presents a study of optimizing input process parameters on leakage current (IOFF in silicon-on-insulator (SOI Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF value. An orthogonal array, main effects, signal-to-noise ratio (SNR and analysis of variance (ANOVA are utilized in order to analyze the effect of input process parameter variation on leakage current (IOFF. Based on the results, the minimum leakage current ((IOFF of SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION value at 434 µA/µm. Both the drive current (ION and leakage current (IOFF values yield a higher ION/IOFF ratio (48.22 x 106 for low power consumption application. Meanwhile, polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors with each of the contributing factor effects percentage of 59% and 25%.

Influence of new military athletic footwear on the kinetics and kinematics of running in relation to army boots.

Science.gov (United States)

Sinclair, Jonathan; Taylor, Paul J

2014-10-01

Musculoskeletal injuries in the lower extremities are common in military recruits. Army boots have frequently been cited as a potential mechanism behind these high injury rates. In response to this, the British Army introduced new footwear models, the PT-03 (cross-trainer) and PT1000 (running shoes), which are issued to each new recruit in an attempt to reduce the incidence of these injuries. The aim of the current investigation was to examine the kinetics and kinematic of the PT-03 and PT1000 footwear in relation to conventional army boots. Thirteen participants ran at 4.0 m·s in each footwear condition. Three-dimensional kinematics from the hip, knee, and ankle were measured using an 8-camera motion analysis system. In addition, simultaneous ground reaction forces were obtained. Kinetic parameters were obtained alongside joint kinematics and compared using repeated-measures analyses of variance. The kinetic analysis revealed that impact parameters were significantly greater when running in the army boot compared with the PT-03 and PT1000. The kinematic analysis indicated that, in comparison with the PT-03 and PT1000, running in army boots was associated with significantly greater eversion and tibial internal rotation. It was also found that when running in the PT-03 footwear, participants exhibited significantly greater hip adduction and knee abduction compared with the army boots and PT1000. The results of this study suggest that the army boots and PT-03 footwear are associated with kinetic and kinematic parameters that have been linked to the etiology of injury; thus, it is recommended that the PT1000 footwear be adopted for running exercises.

Switching transients in high-frequency high-power converters using power MOSFET's

Science.gov (United States)

Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

1979-01-01

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures

International Nuclear Information System (INIS)

Johnson, G.H.; Kemp, W.T.; Ackermann, M.R.; Pugh, R.D.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

This is the first report of commercial n- and p-channel power MOSFETs exposed to ionizing radiation while operating in a cryogenic environment. The transistors were exposed to low energy x-rays while placed in a liquid nitrogen-cooled dewar. Results demonstrate significant performance and survivability advantages for space-borne power MOSFETs operated at cryogenic temperatures. The key advantages for low-temperature operation of power MOSFET's in an ionizing radiation environment are: (1) steeper subthreshold current slope before and after irradiation; (2) lower off-state leakage currents before and after irradiation; and (3) larger prerad threshold voltage for n-channel devices. The first two points are also beneficial for devices that are not irradiated, but the advantages are more significant in radiation environments. The third point is only an advantage for commercial devices operated in radiation environments. Results also demonstrate that commercial off-the-shelf power MOSFETs can be used for low-temperature operations in a limited total dose environment (i.e., many space applications)

Application of MOSFET detectors for dosimetry in small animal radiography using short exposure times.

Science.gov (United States)

De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G Allan; Yoshizumi, Terry T

2008-08-01

Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies.

Dose verification to cochlea during gamma knife radiosurgery of acoustic schwannoma using MOSFET dosimeter.

Science.gov (United States)

Sharma, Sunil D; Kumar, Rajesh; Akhilesh, Philomina; Pendse, Anil M; Deshpande, Sudesh; Misra, Basant K

2012-01-01

Dose verification to cochlea using metal oxide semiconductor field effect transistor (MOSFET) dosimeter using a specially designed multi slice head and neck phantom during the treatment of acoustic schwannoma by Gamma Knife radiosurgery unit. A multi slice polystyrene head phantom was designed and fabricated for measurement of dose to cochlea during the treatment of the acoustic schwannoma. The phantom has provision to position the MOSFET dosimeters at the desired location precisely. MOSFET dosimeters of 0.2 mm x 0.2 mm x 0.5 μm were used to measure the dose to the cochlea. CT scans of the phantom with MOSFETs in situ were taken along with Leksell frame. The treatment plans of five patients treated earlier for acoustic schwannoma were transferred to the phantom. Dose and coordinates of maximum dose point inside the cochlea were derived. The phantom along with the MOSFET dosimeters was irradiated to deliver the planned treatment and dose received by cochlea were measured. The treatment planning system (TPS) estimated and measured dose to the cochlea were in the range of 7.4 - 8.4 Gy and 7.1 - 8 Gy, respectively. The maximum variation between TPS calculated and measured dose to cochlea was 5%. The measured dose values were found in good agreement with the dose values calculated using the TPS. The MOSFET dosimeter can be a suitable choice for routine dose verification in the Gamma Knife radiosurgery.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

Science.gov (United States)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

Aircast walking boot and below-knee walking cast for avulsion fractures of the base of the fifth metatarsal: a comparative cohort study.

Science.gov (United States)

Shahid, Mohammad Kamran; Punwar, Shahid; Boulind, Caroline; Bannister, Gordon

2013-01-01

Acute avulsion fractures of the base of the fifth metatarsal are common and are treated in a variety of ways. The aims of this study were to compare pain, functional outcome, and time taken off work after treatment with a walking boot or a short-leg cast. Of 39 patients with acute avulsion fractures of the base of the fifth metatarsal, 23 were treated with a short-leg cast and 16 with a walking boot, according to the preference of the consultant present at outpatient clinic. Functional outcome was assessed by the Visual Analogue Scale Foot and Ankle Questionnaire (VAS FA), pain, and other complaints on presentation and at 3, 6, 9, and 12 weeks after injury. The VAS FA scores were compared between the 2 groups by a paired Student t test. The mean time to return to the level of pain and function before injury was approximately 9 weeks after treatment in the walking boot group and 12 weeks with a short-leg cast. Patients with walking boots reported less pain between 3 and 12 weeks than did those with short-leg casts after 6 (P = .06), 9 (P = .020), and 12 weeks (P = .33). Function was significantly better with Aircast walking boots after 3 (P = .006), 6 (P = .002), and 9 weeks (P = .002) but not after 12 weeks (P = .09). Patients returned to their preinjury level of driving after 6 weeks with walking boots and 12 weeks with short-leg casts (P = .006). Employed patients took a mean of 35.8 days off work (range, 28-42 days), fewer with boots (31.5 days) than with short-leg casts (39.2 days). The walking boot was better treatment than a short-leg cast for avulsion fractures of the base of the fifth metatarsal. Patients had an improved combined level of pain and function 3 weeks earlier, at 9 weeks post injury, when managed in a walking boot. Level II, prospective comparative series.

Development of MOS-FET based Marx generator with self-proved gate power

International Nuclear Information System (INIS)

Tokuchi, A.; Jiang, W.; Takayama, K.; Arai, T.; Kawakubo, T.; Adachi, T.

2012-01-01

New MOS-FET based Marx generator is described. An electric gate power for the MOS-FET is provided from the Marx main circuit itself. Four-stage Marx generator generates -12kV of the output voltage. The Marx Generator is successfully used to drive an Einzel lens chopper to generate a short pulsed ion beam for a KEK digital accelerator. (author)

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

DEFF Research Database (Denmark)

Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

2017-01-01

The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice...... the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

Science.gov (United States)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

Atmel Microcontroller Based Soft Switched PWM ZVS Full Bridge DC to DC Converter

Directory of Open Access Journals (Sweden)

DEEPAK KUMAR NAYAK

2010-12-01

Full Text Available This paper deals with the simulation and implementation of soft switched PWM ZVS full bridge DC to DC converter. The 48V DC is efficiently reduced to 12V DC using a DC to DC converter. This converter has advantages like reduced switching losses, stresses and EMI. Input DC is converted into high frequency AC and it is stepped down to 12V level. Later it is rectified using a full wave rectifier. Laboratory model of microcontroller based DC to DC converter is fabricated and tested. The experimental results are compared with the simulation results.

Determination of dose correction factor for energy and directional dependence of the MOSFET dosimeter in an anthropomorphic phantom

International Nuclear Information System (INIS)

Cho, Sung Koo; Choi, Sang Hyoun; Kim, Chan Hyeong; Na, Seong Ho

2006-01-01

In recent years, the MOSFET dosimeter has been widely used in various medical applications such as dose verification in radiation therapeutic and diagnostic applications. The MOSFET dosimeter is, however, mainly made of silicon and shows some energy dependence for low energy photons. Therefore, the MOSFET dosimeter tends to overestimate the dose for low energy scattered photons in a phantom. This study determines the correction factors to compensate these dependences of the MOSFET dosimeter in ATOM phantom. For this, we first constructed a computational model of the ATOM phantom based on the 3D CT image data of the phantom. The voxel phantom was then implemented in a Monte Carlo simulation code and used to calculate the energy spectrum of the photon field at each of the MOSFET dosimeter locations in the phantom. Finally, the correction factors were calculated based on the energy spectrum of the photon field at the dosimeter locations and the pre-determined energy and directional dependence of the MOSFET dosimeter. Our result for 60 Co and 137 Cs photon fields shows that the correction factors are distributed within the range of 0.89 and 0.97 considering all the MOSFET dosimeter locations in the phantom

Remote Boot of a Diskless Linux Client for Operating System Integrity

National Research Council Canada - National Science Library

Allen, Bruce

2002-01-01

.... The diskless Linux client is organized to provide read-write files over NFS at home, read-only files over NFS for accessing bulky immutable utilities, and sone volatile RAM disk files to allow the Linux Kernel to boot...

A Cost-Effective Design and Analysis of Full Bridge LLC Resonant Converter

OpenAIRE

Kaibalya Prasad Panda; Sreyasee Rout

2016-01-01

LLC (Inductor-inductor-capacitor) resonant converter has lots of advantages over other type of resonant converters which include high efficiency, more reliable and have high power density. This paper presents the design and analysis of a full bridge LLC resonant converter. In addition to the operational principle, the ZVS and ZCS conditions are also explained with the DC characteristics. Simulation of the LLC resonant converter is performed in MATLAB/ Simulink and the practical prototype setu...

Trench angle: a key design factor for a deep trench superjunction MOSFET

International Nuclear Information System (INIS)

Kang, Hyemin; Lee, Jaegil; Lee, Kwangwon; Choi, Youngchul

2015-01-01

Why is the development of a deep trench superjunction (SJ) MOSFET above 600 V and under 8.0 mohm · cm 2 difficult? A deep trench SJ MOSFET is expected to have a low turn-on resistance because the post thermal process after the epitaxial process, which is normally used in a multi-step epitaxy structure, is unnecessary. When designing a deep trench SJ MOSFET, the trench angle is the most important factor because this determines the breakdown voltage (BV) and BV variations. In this paper, we investigated how the trench angle affects the BV and BV window as a condition of the possible thermal process. By employing a physical concept, ΔCharge, we explained why the maximum BV is decreased and the BV window is increased as the trench angle decreases. Also, we systematically scrutinized the transition of the vertical electric field by varying the trench angle. Furthermore, in a real case, the principle of the trench angle which contributes to the deviation of the charge imbalance and specific resistance of SJ is described. Finally, we discuss the challenge of SJ MOSFET development in the industry. (paper)

Progress in MOSFET double-layer metalization

Science.gov (United States)

Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

1980-01-01

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

The impact of a surgical boot camp on early acquisition of technical and nontechnical skills by novice surgical trainees.

Science.gov (United States)

Heskin, Leonie; Mansour, Ehab; Lane, Brian; Kavanagh, Dara; Dicker, Pat; Ryan, Donncha; Gildea-Byrne, Kate; Pawlikowska, Teresa; Tierney, Sean; Traynor, Oscar

2015-09-01

Acquisition of skills early in surgical training represents a significant challenge at present because of training time constraints. The aim of this study was to investigate if an intensive surgical boot camp was effective in transferring skills at the beginning of a surgical training program. New core surgical trainees (n = 58) took part in a 5-day boot camp. There were pretest and posttest assessments of knowledge, technical skills, and confidence levels. The boot camp used simulation and senior surgical faculty to teach a defined range of technical and nontechnical skills. The scores for knowledge (53.8% vs 68.4%, P technical skills (35.9% to 60.6% vs 50.6% to 78.2%, P Skills improvements were still present a year later. The 5-day surgical boot camp proved to be an effective way to rapidly acquire surgical knowledge and skills while increasing the confidence levels of trainees. Copyright © 2015 Elsevier Inc. All rights reserved.

An in-house developed resettable MOSFET dosimeter for radiotherapy.

Science.gov (United States)

Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

2010-02-21

The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy(-1) can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min(-1)) was within 2.5%, temperature dependence within 2.0% (25-37 degrees C). A strong angular dependence has been observed for gantry incidences exceeding +/-30 degrees C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated

The use of strapping to increase local pressure: reporting of a sub-bandage pressure study

Directory of Open Access Journals (Sweden)

Alison Hopkins

2013-04-01

Full Text Available High compression is the gold standard for venous ulcer management. This brief report presents the results of a sub-bandage pressure study that investigated the pressures received from compression therapy in the region of the retromalleolal fossa. The study tested the hypothesis that therapeutic compression is not achieved behind the malleolus. The results confirm this, showing that less that 5-mmHg sub-bandage pressure is achieved despite high compression at the B1 level. This report demonstrates that the application of novel strapping below the malleolus substantially increases the compression at rest, standing and dorsiflexion. The clinical implications of this are discussed.

A Unified Channel Charges Expression for Analytic MOSFET Modeling

Directory of Open Access Journals (Sweden)

Hugues Murray

2012-01-01

Full Text Available Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL. The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry

International Nuclear Information System (INIS)

Brady, S. L.; Kaufman, R. A.

2012-01-01

Purpose: The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ∼25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. Methods: The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Results: Calibration precision was measured to be better than 5%–7%, 3%–5%, and 2%–4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy −1 versus the CT scatter phantom 29.2 ± 1.0 mV cGy −1 and FIA with x-ray 29.9 ± 1.1 mV cGy −1 methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ∼3000 mV. Conclusions: The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry.

Science.gov (United States)

Brady, S L; Kaufman, R A

2012-06-01

The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ~25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Calibration precision was measured to be better than 5%-7%, 3%-5%, and 2%-4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy(-1) versus the CT scatter phantom 29.2 ± 1.0 mV cGy(-1) and FIA with x-ray 29.9 ± 1.1 mV cGy(-1) methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ~3000 mV. The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the eventual use for phantom dosimetry, a measurement error ~12

A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

International Nuclear Information System (INIS)

Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

2003-01-01

A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

Science.gov (United States)

Xin, Wan; Weisong, Zhou; Daoguang, Liu; Hanliang, Bo; Jun, Xu

2015-05-01

It was demonstrated that heavy ions can induce large current—voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

Academic Boot Camp for the Writing of Psychology Research Reports

Science.gov (United States)

Skues, Jason L.; Wise, Lisa

2014-01-01

Herein, we describe the implementation of, and responses to, a structured writing workshop in the form of an academic boot camp. Participants were 42 undergraduate psychology students from a medium-sized Australian university who were completing their major assignment for the semester. A majority of the students expressed satisfaction with the…

Prognostics Of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven And Model-Based Methodologies

Data.gov (United States)

National Aeronautics and Space Administration — An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor...

Response Variability in Commercial MOSFET SEE Qualification

International Nuclear Information System (INIS)

George, J. S.; Clymer, D. A.; Turflinger, T. L.; Mason, L. W.; Stone, S.

2016-01-01

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V_D_S) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Kai; Zhang Yue; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue

2013-01-01

The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal—oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V d ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Verification of eye lens dose in IMRT by MOSFET measurement.

Science.gov (United States)

Wang, Xuetao; Li, Guangjun; Zhao, Jianling; Song, Ying; Xiao, Jianghong; Bai, Sen

2018-04-17

The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal-oxide-semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions. Copyright © 2018 American Association of Medical Dosimetrists. Published by Elsevier Inc. All rights reserved.

Thermally-Activated, Delayed Fluorescence in O,B,O- and N,B,O-Strapped Boron Dipyrromethene Derivatives.

Science.gov (United States)

Stachelek, Patrycja; Alsimaree, Abdulrahman A; Alnoman, Rua B; Harriman, Anthony; Knight, Julian G

2017-03-16

A small series of boron dipyrromethene (BODIPY) dyes has been synthesized whereby the boron atom is constrained in a five-membered ring formed from either o-dihydroxypyridine or o-aminophenol. In the latter case, the amino group has been converted into the corresponding amide derivative so as to curtail the possibility for light-induced charge transfer from strap to BODIPY. These compounds are weakly emissive in fluid solution but cleavage of the strap, by treatment with a photoacid generator, restores strong fluorescence. Surprisingly, the same compounds remain weakly fluorescent in a rigid glass at 80 K where light-induced charge transfer is most unlikely. In fluid solution, the fluorescence quantum yield increases with increasing temperature due to a thermally activated step but does not correlate with the thermodynamics for intramolecular charge transfer. It is proposed that the strap causes rupture of the potential energy surface for the excited state, creating traps that provide new routes by which the wave packet can return to the ground state. Access to the trap from the excited state is reversible, leading to the delayed emission. Analysis of the temperature dependent emission intensities allows estimation of the kinetic parameters associated with entering and leaving the trap.

Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

Energy Technology Data Exchange (ETDEWEB)

Napiah, Z. A. F. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Makhtar, N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Othman, M. A., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Idris, M. I., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Arith, F., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Yasin, N. Y. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Taib, S. N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com [Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka (Malaysia)

2014-02-24

The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology.

Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

International Nuclear Information System (INIS)

Napiah, Z. A. F. M.; Makhtar, N.; Othman, M. A.; Idris, M. I.; Arith, F.; Yasin, N. Y. M.; Taib, S. N.

2014-01-01

The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

Science.gov (United States)

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Cyberknife Relative Output Factor measurements using fiber-coupled luminescence, MOSFETS and RADPOS dosimetry system

DEFF Research Database (Denmark)

Ploquin, N.; Kertzscher Schwencke, Gustavo Adolfo Vladimir; Vandervoort, E.

2012-01-01

from 5 to 60 mm. ROFs were also measured using a mobileMOSFET system (Best Medical Canada) and EBT1 and EBT2 GAFCHROMIC® (ISP, Ashland) radiochromic films. For cone sizes 12.5–60 mm all detector results were in agreement within the measurement uncertainty. The microMOSFET/RADPOS measurements (published.......3% and 0.865 ± 0.3% for 5, 7.5 and 10 mm cones. Our study shows that the microMOSFET/RADPOS and optical fiber‐coupled RL dosimetry system are well suited for Cyberknife cone output factors measurements over the entire range of field sizes, provided that appropriate correction factors are applied...

Monte Carlo simulation of MOSFET dosimeter for electron backscatter using the GEANT4 code.

Science.gov (United States)

Chow, James C L; Leung, Michael K K

2008-06-01

The aim of this study is to investigate the influence of the body of the metal-oxide-semiconductor field effect transistor (MOSFET) dosimeter in measuring the electron backscatter from lead. The electron backscatter factor (EBF), which is defined as the ratio of dose at the tissue-lead interface to the dose at the same point without the presence of backscatter, was calculated by the Monte Carlo simulation using the GEANT4 code. Electron beams with energies of 4, 6, 9, and 12 MeV were used in the simulation. It was found that in the presence of the MOSFET body, the EBFs were underestimated by about 2%-0.9% for electron beam energies of 4-12 MeV, respectively. The trend of the decrease of EBF with an increase of electron energy can be explained by the small MOSFET dosimeter, mainly made of epoxy and silicon, not only attenuated the electron fluence of the electron beam from upstream, but also the electron backscatter generated by the lead underneath the dosimeter. However, this variation of the EBF underestimation is within the same order of the statistical uncertainties as the Monte Carlo simulations, which ranged from 1.3% to 0.8% for the electron energies of 4-12 MeV, due to the small dosimetric volume. Such small EBF deviation is therefore insignificant when the uncertainty of the Monte Carlo simulation is taken into account. Corresponding measurements were carried out and uncertainties compared to Monte Carlo results were within +/- 2%. Spectra of energy deposited by the backscattered electrons in dosimetric volumes with and without the lead and MOSFET were determined by Monte Carlo simulations. It was found that in both cases, when the MOSFET body is either present or absent in the simulation, deviations of electron energy spectra with and without the lead decrease with an increase of the electron beam energy. Moreover, the softer spectrum of the backscattered electron when lead is present can result in a reduction of the MOSFET response due to stronger

Static and fatigue investigation of second generation steel free bridge decks

International Nuclear Information System (INIS)

Klowak, C.; Memon, Amjad H.; Mufti, Aftab A.

2006-01-01

This paper outlines the static and fatigue behavior of two different cast-in-place second generation steel-free bridge decks, which are: hybrid carbon fiber reinforced polymer (CFRP); and glass fiber reinforced polymer (GFRP) and steel strap design. Although cast monolithically, the first deck slab was divided into three segments with different reinforcement configurations. All three segments were tested under a 222kN cyclic loading to investigate fatigue behavior. The second bridge deck comprised an internal panel and two cantilevers and was equipped with a civionics system. The internal panel static test that this paper deals with is useful in the development of fatigue theory derived from fatigue testing of the first bridge deck. Test results form the cyclic loading of the first bridge deck indicated that the cross-sectional area of the reinforcement used in the test bridge deck can be reduced by 40% based on the reinforcement provided in the deck under service loads. The hybrid system also reduced the development of longitudinal crack widths to approximately 0.4 mm under service conditions, compared to the cracks that occurred approximately halfway between adjacent bridge girders that were determined to be roughly 1 mm in several first generation steel-free bridge decks constructed in Canada. Civionics, also discussed in the paper, is a new term coined from Civil-Electronics, which is the application of electronics to civil structures. The Civionics Specifications (2004) developed by ISIS Canada researchers are a helpful design tool for engineers and contractors to develop civionics and structural health monitoring systems for civil infrastructure that will last the lifetime of a structure. The use of civionics for the second test bridge deck ensured the survival of 100% of the 63 internal sensors throughout the rigors of the construction and casting of the deck. (author)

Analytical V TH and S models for (DMG-GC-stack) surrounding-gate MOSFET

Science.gov (United States)

Aouaj, Abdellah; Bouziane, Ahmed; Nouaçry, Ahmed

2012-01-01

This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short-channel effects.

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

International Nuclear Information System (INIS)

Wan Xin; Zhou Weisong; Liu Daoguang; Bo Hanliang; Xu Jun

2015-01-01

It was demonstrated that heavy ions can induce large current—voltage (I–V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO 2 /Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I–V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model. (paper)

Effects of trajectory exercise using a laser pointer on electromyographic activities of the gluteus maximus and erector spinae during bridging exercises.

Science.gov (United States)

Kim, Yu-Ri; Yoo, Won-Gyu

2016-01-01

[Purpose] The purpose of this study was to investigate activities of the hip extensors and erector spinae during bridging exercise by using instruments with a laser pointer on the pelvic belt. [Subjects] Twelve subjects (age, 23 to 33 years) with non-specific low back pain volunteered for this study. [Methods] Subjects performed bridging exercises with and without trajectory exercises by using a laser pointer fixed to a pelvic strap. The erector spinae, gluteus maximus and hamstring activities with and without trajectory exercises using a laser pointer were recorded on using electromyography. [Results] Compared to the without laser pointer group, the group that underwent bridging with trajectory exercises using a laser pointer had significantly higher gluteus maximus activity and significantly lower erector spinae activity. Significantly higher gluteus maximus/erector spinae activity ratios were observed when performing trajectory exercises using a laser pointer during bridging exercises. [Conclusion] This result suggests that trajectory exercises using a laser pointer during a bridging exercise would be effective for improving gluteus maximus activity.

BOOTES: Technological Developments and Scientific Results by a Stereoscopic System with two Stations Spaced by 240 km

International Nuclear Information System (INIS)

Mateo Sanguino, T. de J.; Castro-Tirado, A.J.; Ugarte Postigo, A. de; Gorosabel, J.; Fernandez Palomo, M.T.; Morena Carretero, B.A. de la; Castro Ceron, J.M.; Berna Galiano, J.A.; Pata, P.; Bernas, M.; Vitek, S.; Soldan, J.; Hudec, R.; Jelinek, M.; Kubanek, P.; McBreen, S.; Garcia Dabo, C.E.; Soria, T.; Torres Riera, J.

2004-01-01

An overview of the technological developments at the Burst Observer and Optical Transient Exploring System (BOOTES) is given. The most important scientific results obtained so far are the detection of an OT in the GRB 000313 error box and the non detection of optical emission simultaneous for GRB 010220. GRB 030226 (long/soft events), GRB 020531 and GRB 021201 (short/hard events). With the recent instrumental and technical developments, BOOTES multiplies its science capabilities

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

Design and Implementation of Battery Charger with Power Factor Correction Using Sepic Converter and Full-bridge DC-DC Converter

OpenAIRE

Efendi, Moh. Zaenal; Windarko, Novie Ayub; Amir, Moh. Faisal

2013-01-01

This paper presents a design and implementation of a converter which has a high power factor for battery charger application. The converter is a combination of a SEPIC converter and a full-bridge DC-DC converter connected in two stages of series circuit. The SEPIC converter works in discontinuous conduction mode and it serves as a power factor corrector so that the shape of input current waveform follows the shape of input voltage waveform. The full-bridge DC-DC converter serves as a regulato...

Characterization of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure.

Science.gov (United States)

Bassinet, Céline; Huet, Christelle; Baumann, Marion; Etard, Cécile; Réhel, Jean-Luc; Boisserie, Gilbert; Debroas, Jacques; Aubert, Bernard; Clairand, Isabelle

2013-04-01

As MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detectors allow dose measurements in real time, the interest in these dosimeters is growing. The aim of this study was to investigate the dosimetric properties of commercially available TN-502RD-H MOSFET silicon detectors (Best Medical Canada, Ottawa, Canada) in order to use them for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure. Reproducibility of the measurements, dose rate dependence, and dose response of the MOSFET detectors have been studied with a Co source. Influence of the dose rate, frequency, and pulse duration on MOSFET responses has also been studied in pulsed x-ray fields. Finally, in order to validate the integrated dose given by MOSFET detectors, MOSFETs and TLDs (LiF:Mg,Cu,P) were fixed on an Alderson-Rando phantom in the conditions of an interventional neuroradiology procedure, and their responses have been compared. The results of this study show the suitability of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of accident, provided a well-corrected energy dependence, a pulse duration equal to or higher than 10 ms, and an optimized contact between the detector and the skin of the patient are achieved.

Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

DEFF Research Database (Denmark)

Nair, Unnikrishnan Raveendran; Munk-Nielsen, Stig; Jørgensen, Asger Bjørn

2017-01-01

resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF...... are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz...

Real-Time In Vivo Dosimetry With MOSFET Detectors in Serial Tomotherapy for Head and Neck Cancer Patients

International Nuclear Information System (INIS)

Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Shiu, Almon; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly; Kron, Tomas

2011-01-01

Purpose: A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Methods and Materials: Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. Results: MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 x 20 cm 2 , MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360 o , and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. Conclusion: The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment.

Real-time in vivo dosimetry with MOSFET detectors in serial tomotherapy for head and neck cancer patients.

Science.gov (United States)

Qi, Zhen-Yu; Deng, Xiao-Wu; Huang, Shao-Min; Shiu, Almon; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly; Kron, Tomas

2011-08-01

A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 × 20 cm(2), MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360°, and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment. Copyright © 2011 Elsevier Inc. All rights reserved.

Four Years of Real-Time GRB Followup by BOOTES-1B (2005–2008

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Martin Jelínek

2010-01-01

Full Text Available Four years of BOOTES-1B GRB follow-up history are summarised for the first time in the form of a table. The successfully followed events are described case by case. Further, the data are used to show the GRB trigger rate in Spain on a per-year basis, resulting in an estimate of 18 triggers and about 51 hours of telescope time per year for real-time triggers. These numbers grow to about 22 triggers and 77 hours per year if we include also the GRBs observable within 2 hours after the trigger.

H-Bridge Transformerless Inverter with Common Ground for Single-Phase Solar-Photovoltaic System

DEFF Research Database (Denmark)

Siwakoti, Yam Prasad; Blaabjerg, Frede

2017-01-01

This paper proposes a new single-phase H-Bridge transformerless inverter with common ground for grid-connected photovoltaic systems (hereafter it is called ‘Siwakoti-H’ inverter). The inverter works on the principle of flying capacitor and consists of only four power switches (two reverse blocking...... IGBT's (RB-IGBT) and two MOSFET's), a capacitor and a small filter at the output stage. The proposed topology share a common ground with the grid and the PV source. A Unipolar Sinusoidal Pulse-Width Modulation (SPWM) technique is used to modulate the inverter to minimize switching loss, output current...

The 'bridging sign', a MR finding for combined full-thickness tears of the subscapularis tendon and the supraspinatus tendon

Energy Technology Data Exchange (ETDEWEB)

Jung, Jin Young [Dept. of Radiology, Saint Paul' s Hospital, The Catholic Univ. of Korea, Seoul (Korea, Republic of); Yoon, Young Cheol; Cha, Dong Ik [Dept. of Radiology, Samsung Medical Center, Sungkyunkwan Univ, School of Medicine, Seoul (Korea, Republic of)], e-mail: ycyoon@skku.edu; Yoo, Jae-Chul [Dept. of Orthopedic Surgery, Samsung Medical Center, Sungkyunkwan Univ. School of Medicine, Seoul (Korea, Republic of); Jung, Jee Young [Dept. of Radiology, School of Medicine, Chung-Ang Univ., Seoul (Korea, Republic of)

2013-02-15

Background: In daily practice, we discovered one of the secondary magnetic resonance (MR) findings of the subscapularis (SSC) tendon tear, the 'bridging sign', which has not been previously described. Purpose: To describe the 'bridging sign' on shoulder MR imaging and its radiological and clinical significance in patients with SSC tendon tear. Material and Methods: Twenty-nine patients who had undergone shoulder arthroscopy and had full-thickness tear of the subscapularis tendon were enrolled. The medical records of the 29 patients were retrospectively reviewed for the duration of shoulder pain, rotator cuff tears, and associated arthroscopic findings: biceps tendon abnormality and superior glenoid labral tear. Then, preoperative shoulder MR images were retrospectively reviewed for the presence or absence of the 'bridging sign' and associated MR findings: periarticular fluid and fatty atrophy of the supraspinatus and subscapularis muscles. The type of rotator cuff tear associated with the 'bridging sign' was assessed and the sensitivity, specificity, and accuracy of the 'bridging sign' for the diagnosis of a certain type of rotator cuff tear were calculated. Associated arthroscopic and MR findings and mean duration of the shoulder pain between the patients with and without the 'bridging sign' were compared. Results: The 'bridging sign' was seen in 17 of 29 patients and corresponded to a complex of the torn and superomedially retracted subscapularis tendon, coracohumeral ligament, and superior glenohumeral ligament, adhered to the anterior margin of the torn supraspinatus (SSP) tendon on arthroscopy. All patients with the 'bridging sign' had combined full-thickness tear (FTT) of the cranial 1/2 portion of the subscapularis tendon and anterior 1/2 portion of the SSP tendon. The sensitivity, specificity, and accuracy of the 'bridging sign' for the diagnosis of combined FTTs of

Theoretical Analysis of Stress Distribution in Bonded Single Strap and Stiffened Joints

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Behnam Ghoddous

Full Text Available Abstract In this paper, distribution of peeling stress in two types of adhesively-bonded joints is investigated. The joints are a single strap and a stiffened joint. Theses joints are under uniform tensile load and materials are assumed orthotropic. Layers can be identical or different in mechanical or geometrical properties. A two-dimensional elasticity theory that includes the complete stress-strain and the complete strain-displacement relations for adhesive and adherends is used in this analysis. The displacement is assumed to be linear in the adhesive layer. A set of differential equations was derived and solved by using appropriate boundary conditions. Results revealed that the peak peeling stress developed within the adhesive layer is a function of geometrical and mechanical properties. FEM solution is used as the second method to verify the analytical results. A good agreement is observed between analytical and FEM solutions.

On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

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Muhammad Nawaz

2015-01-01

Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

Science.gov (United States)

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers

Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study

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Md. Shamim Sarker

Full Text Available This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF ratio and subthreshold slope of the device using Non Equilibrium Greens Function (NEGF formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson’s equation self-consistently in NanoTCADViDES environment and found that the ON state performance of CNT MOSFET and CNT TFET have significant dependency on the dielectric strength of the gate oxide materials. The figure of merits of the devices also demonstrates that the CNT TFET is promising for high-speed and low-power logic applications. Keywords: CNT TFET, Subthreshold slop, Barrier width, Conduction band (C.B and Valance band (V.B, Oxide dielectric strength, Tight binding approach

Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

Science.gov (United States)

Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

2015-08-01

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

International Nuclear Information System (INIS)

De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

2010-01-01

MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

Direct protein detection with a nano-interdigitated array gate MOSFET.

Science.gov (United States)

Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

2009-08-15

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

Comparative study of leakage power in CNTFET over MOSFET device

International Nuclear Information System (INIS)

Sinha Sanjeet Kumar; Chaudhury Saurabh

2014-01-01

A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported. The characteristics of both devices are observed as varying the oxide thickness. Thereafter, we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device. After simulation on the HSPICE tool, we observed that the high threshold voltage can be achieved at a low chiral vector pair. It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small. After that, we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices. We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect. It is observed that at below the 10 nm channel length, the threshold voltage is increased rapidly in the case of the CNTFET device, whereas in the case of the MOSFET device, the threshold voltage decreases drastically. (semiconductor devices)

Genetic analysis of cold tolerance at the germination and booting stages in rice by association mapping.

Directory of Open Access Journals (Sweden)

Yinghua Pan

Full Text Available Low temperature affects the rice plants at all stages of growth. It can cause severe seedling injury and male sterility resulting in severe yield losses. Using a mini core collection of 174 Chinese rice accessions and 273 SSR markers we investigated cold tolerance at the germination and booting stages, as well as the underlying genetic bases, by association mapping. Two distinct populations, corresponding to subspecies indica and japonica showed evident differences in cold tolerance and its genetic basis. Both subspecies were sensitive to cold stress at both growth stages. However, japonica was more tolerant than indica at all stages as measured by seedling survival and seed setting. There was a low correlation in cold tolerance between the germination and booting stages. Fifty one quantitative trait loci (QTLs for cold tolerance were dispersed across all 12 chromosomes; 22 detected at the germination stage and 33 at the booting stage. Eight QTLs were identified by at least two of four measures. About 46% of the QTLs represented new loci. The only QTL shared between indica and japonica for the same measure was qLTSSvR6-2 for SSvR. This implied a complicated mechanism of old tolerance between the two subspecies. According to the relative genotypic effect (RGE of each genotype for each QTL, we detected 18 positive genotypes and 21 negative genotypes in indica, and 19 positive genotypes and 24 negative genotypes in japonica. In general, the negative effects were much stronger than the positive effects in both subspecies. Markers for QTL with positive effects in one subspecies were shown to be effective for selection of cold tolerance in that subspecies, but not in the other subspecies. QTL with strong negative effects on cold tolerance should be avoided during MAS breeding so as to not cancel the effect of favorable QTL at other loci.

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

International Nuclear Information System (INIS)

Jiang, Y; Wang, Q P; Tamai, K; Ao, J P; Ohno, Y; Miyashita, T; Motoyama, S; Wang, D J

2013-01-01

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl 3 ) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl 4 ) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl 3 based dry recess achieved a high maximum electron mobility of 141.5 cm 2 V −1 s −1 and a low interface state density.

The Booting-Type ADRC of Airborne Photoelectrical Platform

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Xiantao Li

2014-01-01

Full Text Available Customary disturbance rejection in the photoelectrical platform is “passive,” which makes it difficult to further improve the isolation degree owning to the strict restriction of mechanical resonance frequency. In this paper, a booting-type ADRC is proposed, whose disturbance estimation process is guided by target value to reduce the overshoot and lag in the estimated value of disturbance. All kinds of disturbance in the system are modeled in a unified way by using the equivalent disturbance voltage to avoid the complex modeling process. Based on the simplified model, extended state observer (ESO is designed to realize a real-time estimation of the disturbance. Then, the disturbance compensation is added to generate the final control value by combining the customary square lead-lag controller. Experiments are implemented to test the proposed control strategy by mounting the photoelectrical platform on a flight simulator and generating a motion perturbation. Compared with the case of only traditional lead-lag controller, the isolation degree of disturbance is enhanced obviously. And the experiments also illustrate strong robustness of ADRC.

Optimization of CernVM early boot process

CERN Document Server

Mazdin, Petra

2015-01-01

CernVM virtual machine is a Linux based virtual appliance optimized for High Energy Physics experiments. It is used for cloud computing, volunteer computing, and software development by the four large LHC experiments. The goal of this project is proling and optimizing the boot process of the CernVM. A key part was the development of a performance profiler for shell scripts as an extension to the popular BusyBox open source UNIX tool suite. Based on the measurements, costly shell code was replaced by more efficient, custom C programs. The results are compared to the original ones and successful optimization is proven.

Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

Science.gov (United States)

Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

2018-01-01

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices

International Nuclear Information System (INIS)

Bendib, T.; Djeffal, F.; Meguellati, M.

2014-01-01

An analytical investigation has been proposed to study the subthreshold behavior of junctionless gates all around (JLGAA) MOSFET for nanoscale CMOS analog applications. Based on 2-D analytical analysis, a new subthreshold swing model for short-channel JLGAA MOSFETs is developed. The analysis has been used to calculate the subthreshold swing and to compare the performance of the investigated design and conventional GAA MOSFET, where the comparison of device architectures shows that the JLGAA MOSFET exhibits a superior performance with respect to the conventional inversion-mode GAA MOSFET in terms of the fabrication process and electrical behavior in the subthreshold domain. The analytical models have been validated by 2-D numerical simulations. The proposed analytical models are used to formulate the objectives functions. The overall objective function is formulated by means of a weighted sum approach to search the optimal electrical and dimensional device parameters in order to obtain the better scaling capability and the electrical performance of the device for ultra-low power applications. (semiconductor devices)

High frequency MOSFET gate drivers technologies and applications

CERN Document Server

Zhang, Zhiliang

2017-01-01

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Directory of Open Access Journals (Sweden)

Sibylle Dieckerhoff

2008-01-01

Full Text Available The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.

Effect of neutron irradiation on the breakdown voltage of power MOSFET's

International Nuclear Information System (INIS)

Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

Real-Time Model and Simulation Architecture for Half- and Full-Bridge Modular Multilevel Converters

Science.gov (United States)

Ashourloo, Mojtaba

This work presents an equivalent model and simulation architecture for real-time electromagnetic transient analysis of either half-bridge or full-bridge modular multilevel converter (MMC) with 400 sub-modules (SMs) per arm. The proposed CPU/FPGA-based architecture is optimized for the parallel implementation of the presented MMC model on the FPGA and is beneficiary of a high-throughput floating-point computational engine. The developed real-time simulation architecture is capable of simulating MMCs with 400 SMs per arm at 825 nanoseconds. To address the difficulties of the sorting process implementation, a modified Odd-Even Bubble sorting is presented in this work. The comparison of the results under various test scenarios reveals that the proposed real-time simulator is representing the system responses in the same way of its corresponding off-line counterpart obtained from the PSCAD/EMTDC program.

Study on Frequency Dependency of ON-Resistance and Pulse-Loss Calculation of MOSFETs for Switch Mode Power Supply

Science.gov (United States)

Yamamura, Hideho; Sato, Ryohei; Iwata, Yoshiharu

Global efforts toward energy conservation, increasing data centers, and the increasing use of IT equipments are leading to a demand in reduced power consumption of equipments, and power efficiency improvement of power supply units is becoming a necessity. MOSFETs are widely used for their low ON-resistances. Power efficiency is designed using time-domain circuit simulators, except for transformer copper-loss, which has frequency dependency which is calculated separately using methods based on skin and proximity effects. As semiconductor technology reduces the ON-resistance of MOSFETs, frequency dependency due to the skin effect or proximity effect is anticipated. In this study, ON-resistance of MOSFETs are measured and frequency dependency is confirmed. Power loss against rectangular current pulse is calculated. The calculation method for transformer copper-loss is expanded to MOSFETs. A frequency function for the resistance model is newly developed and parametric calculation is enabled. Acceleration of calculation is enabled by eliminating summation terms. Using this method, it is shown that the frequency dependent component of the measured MOSFETs increases the dissipation from 11% to 32% at a switching frequency of 100kHz. From above, this paper points out the importance of the frequency dependency of MOSFETs' ON-resistance, provides means of calculating its pulse losses, and improves loss calculation accuracy of SMPSs.

Switching Investigations on a SiC MOSFET in a TO-247 Package

DEFF Research Database (Denmark)

Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

2014-01-01

This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

International Nuclear Information System (INIS)

Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

2012-01-01

The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

Design and Implementation of Battery Charger with Power Factor Correction using Sepic Converter and Full-bridge DC-DC Converter

Directory of Open Access Journals (Sweden)

Moh. Zaenal Efendi

2013-12-01

Full Text Available This paper presents a design and implementation of a converter which has a high power factor for battery charger application. The converter is a combination of a SEPIC converter and a full-bridge DC-DC converter connected in two stages of series circuit. The SEPIC converter works in discontinuous conduction mode and it serves as a power factor corrector so that the shape of input current waveform follows the shape of input voltage waveform. The full-bridge DC-DC converter serves as a regulator of output voltage and operates at continuous conduction mode. The experimental results show that the power factor of this converter system can be achieved up to 0.96.

Influence without Boots on the Ground: Seaborne Crisis Response

Science.gov (United States)

2013-01-01

67 Figure 6 Conceptualization of the Theoretical Context of Gunboat Diplomacy 73 Figure 7 USN Force Combinations Pyramid 78 Figure 8 CNA III USN...USMC FIGure 7 USN Force Combinations Pyramid influence without boots on the ground 79 meyers$:___WIP from C 032812:_Newport Papers:_NP39:_InDesign:04...forces on the reduction of tensions. on 4 april 1957, Jordanian army officers and Palestinians sympathetic to President gamal abdel Nasser of egypt

Core trainee boot camp-A method for improving technical and non-technical skills of novice surgical trainees. A before and after study.

Science.gov (United States)

Bamford, R; Langdon, L; Rodd, C A; Eastaugh-Waring, S; Coulston, J E

2018-04-10

The transition to surgical training can be a stressful time for trainees and is most evident during national handover periods where new graduates start and senior trainees rotate to new programmes. During this time, patient mortality can increase and Hospital efficiency reduces. This influence is compounded by the impact of working time directives. Intensive, simulation rich training programmes or "Boot Camps" have been postulated as a solution. This article highlights the development of a surgical boot camp for novice surgical trainees and the impact this can have on training. A novel surgical boot camp was developed for all trainees within a surgical training region including nine acute NHS trusts. Participating cohort of trainees completed pre and post course questionnaires to assess technical and non-technical skills. 25 trainees attended and completed the pre and post boot camp questionnaire. Significant improvements were seen with technical skills (p = 0.0429), overall non-technical skills (p skills (p = 0.005) and outpatient skill (p = 0.002). Trainees reported significantly increased ability to assess and manage a critically unwell patient (p = 0.001) and a trauma patient (p = 0.001). 96% of trainees have utilised the skills they learnt on Boot Camp and all trainees would recommend it as an induction programme. Surgical Boot Camps offer a timely chance to develop technical and non-technical skills whilst enhancing a trainee's confidence and knowledge and reduce the patient safety impact of the handover period. Copyright © 2018. Published by Elsevier Ltd.

Boot Camp Prisons as Masculine Organizations: Rethinking Recidivism and Program Design

Science.gov (United States)

Lutze, Faith E.; Bell, Cortney A.

2005-01-01

A number of studies have tested the effectiveness of boot camp prisons in reducing recidivism and results indicate that they have not been as successful as originally anticipated. While no two programs are comparable in terms of programming and treatment, most programs utilize a hypermasculine paramilitary prison structure to deter, punish, and…

Dopant distributions in n-MOSFET structure observed by atom probe tomography

International Nuclear Information System (INIS)

Inoue, K.; Yano, F.; Nishida, A.; Takamizawa, H.; Tsunomura, T.; Nagai, Y.; Hasegawa, M.

2009-01-01

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

Dopant distributions in n-MOSFET structure observed by atom probe tomography.

Science.gov (United States)

Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

2009-11-01

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

Science.gov (United States)

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

The Comprehensive Soldier and Family Fitness Program Evaluation. Report 4. Evaluation of Resilience Training and Mental and Behavioral Health Outcomes

Science.gov (United States)

2013-04-01

Corporation. Meyer, G. J., Finn, S. E., Eyde , L. D., Kay, G. G., Moreland, K. L., Dies, R. R.,…Reed, G. M. (2001). Psychological testing and...reduce Naval basic training attrition rates by improving psychological functioning. BOOT STRAP was tested among recruits undergoing a stressful... psychological health problems has been taken in previous research (Wilk et al., 2010 ). Analytic Strategy: Mediation Analyses The indirect effect

In vivo dose verification for photon treatments of head and neck carcinomas using MOSFET dosimeters

International Nuclear Information System (INIS)

Tung, C.J.; Wang, L.C.; Wang, H.C.; Lee, C.C.; Chao, T.C.

2008-01-01

In vivo dosimetry was performed for the head and neck carcinoma patients during the treatment of a large photon field using MOSFETs. This study followed the protocols recommended by the European Society for Therapeutic Radiology and Oncology. A total of 32 portals belonging to 12 patients were under investigation. Results showed that the deviation between in vivo midline doses and planned target doses was partly due to the manual dose calculations in the treatment planning which used the patient geometric thickness rather than the radiological thickness. Other factors responsible for this deviation included the difficult positioning of MOSFETs on the face mask, the asymmetric positioning of MOSFETs on the left and right sides of the mask, and the asymmetric tissue inhomogeneities with respect to the body midline. To reduce the deviation contributed from these factors, in vivo midline doses were calculated by averaging the results for each bilaterally opposed portals and compared with corresponding planned target doses. This comparison showed that MOSFET dosimeters are suitable for in vivo dosimetry of the present study

Estimation of computed tomography dose index in cone beam computed tomography: MOSFET measurements and Monte Carlo simulations.

Science.gov (United States)

Kim, Sangroh; Yoshizumi, Terry; Toncheva, Greta; Yoo, Sua; Yin, Fang-Fang; Frush, Donald

2010-05-01

To address the lack of accurate dose estimation method in cone beam computed tomography (CBCT), we performed point dose metal oxide semiconductor field-effect transistor (MOSFET) measurements and Monte Carlo (MC) simulations. A Varian On-Board Imager (OBI) was employed to measure point doses in the polymethyl methacrylate (PMMA) CT phantoms with MOSFETs for standard and low dose modes. A MC model of the OBI x-ray tube was developed using BEAMnrc/EGSnrc MC system and validated by the half value layer, x-ray spectrum and lateral and depth dose profiles. We compared the weighted computed tomography dose index (CTDIw) between MOSFET measurements and MC simulations. The CTDIw was found to be 8.39 cGy for the head scan and 4.58 cGy for the body scan from the MOSFET measurements in standard dose mode, and 1.89 cGy for the head and 1.11 cGy for the body in low dose mode, respectively. The CTDIw from MC compared well to the MOSFET measurements within 5% differences. In conclusion, a MC model for Varian CBCT has been established and this approach may be easily extended from the CBCT geometry to multi-detector CT geometry.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

Science.gov (United States)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code

Science.gov (United States)

Panettieri, Vanessa; Amor Duch, Maria; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-01

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm2 and a thickness of 0.5 µm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water™ build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water™ cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code.

Science.gov (United States)

Panettieri, Vanessa; Duch, Maria Amor; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-07

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm(2) and a thickness of 0.5 microm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can successfully

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Baker, Nick; Luo, Haoze; Iannuzzo, Francesco

2017-01-01

the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal......-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies...... decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more...

Role of parasitic capacitances in power MOSFET turn-on switching speed limits

DEFF Research Database (Denmark)

Cittanti, Davide; Iannuzzo, Francesco; Hoene, Eckart

2017-01-01

This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents...... is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent...

Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy.

Science.gov (United States)

Kumar, A Sathish; Singh, I Rabi Raja; Sharma, S D; Ravindran, B Paul

2015-01-01

The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom.

Identification of aeroelastic forces and static drag coefficients of a twin cable bridge stay from full-scale ambient vibration measurements

DEFF Research Database (Denmark)

Acampora, Antonio; Georgakis, Christos T.; Macdonald, J.H.G.

2014-01-01

Despite much research in recent years, large amplitude vibrations of inclined cables continue to be of concern for cable-stayed bridges. Various excitation mechanisms have been suggested, including rain-wind excitation, dry inclined cable galloping, high reduced velocity vortex shedding...... and excitation from the deck and/or towers. Although there have been many observations of large cable vibrations on bridges, there are relatively few cases of direct full-scale cable vibration and wind measurements, and most research has been based on wind tunnel tests and theoretical modelling.This paper...... presents results from full-scale measurements on the special arrangement of twin cables adopted for the Øresund Bridge. The monitoring system records wind and weather conditions, as well as accelerations of certain cables and a few locations on the deck and tower. Using the Eigenvalue Realization Algorithm...

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Science.gov (United States)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Evaluating the Impact of a Canadian National Anatomy and Radiology Contouring Boot Camp for Radiation Oncology Residents

Energy Technology Data Exchange (ETDEWEB)

Jaswal, Jasbir [Department of Radiation Oncology, London Health Sciences Centre, London, Ontario (Canada); D' Souza, Leah; Johnson, Marjorie [Department of Anatomy and Cell Biology, Schulich School of Medicine and Dentistry, Western University, London, Ontario (Canada); Tay, KengYeow [Department of Diagnostic Radiology, London Health Sciences, London, Ontario (Canada); Fung, Kevin; Nichols, Anthony [Department of Otolaryngology, Head & Neck Surgery, Victoria Hospital, London, Ontario (Canada); Landis, Mark [Department of Diagnostic Radiology, London Health Sciences, London, Ontario (Canada); Leung, Eric [Department of Radiation Oncology, London Health Sciences Centre, London, Ontario (Canada); Kassam, Zahra [Department of Diagnostic Radiology, St. Joseph' s Health Care London, London, Ontario (Canada); Willmore, Katherine [Department of Anatomy and Cell Biology, Schulich School of Medicine and Dentistry, Western University, London, Ontario (Canada); D' Souza, David; Sexton, Tracy [Department of Radiation Oncology, London Health Sciences Centre, London, Ontario (Canada); Palma, David A., E-mail: david.palma@lhsc.on.ca [Department of Radiation Oncology, London Health Sciences Centre, London, Ontario (Canada)

2015-03-15

Background: Radiation therapy treatment planning has advanced over the past 2 decades, with increased emphasis on 3-dimensional imaging for target and organ-at-risk (OAR) delineation. Recent studies suggest a need for improved resident instruction in this area. We developed and evaluated an intensive national educational course (“boot camp”) designed to provide dedicated instruction in site-specific anatomy, radiology, and contouring using a multidisciplinary (MDT) approach. Methods: The anatomy and radiology contouring (ARC) boot camp was modeled after prior single-institution pilot studies and a needs-assessment survey. The boot camp incorporated joint lectures from radiation oncologists, anatomists, radiologists, and surgeons, with hands-on contouring instruction and small group interactive seminars using cadaveric prosections and correlative axial radiographs. Outcomes were evaluated using pretesting and posttesting, including anatomy/radiology multiple-choice questions (MCQ), timed contouring sessions (evaluated relative to a gold standard using Dice similarity metrics), and qualitative questions on satisfaction and perceived effectiveness. Analyses of pretest versus posttest scores were performed using nonparametric paired testing. Results: Twenty-nine radiation oncology residents from 10 Canadian universities participated. As part of their current training, 29%, 75%, and 21% receive anatomy, radiology, and contouring instruction, respectively. On posttest scores, the MCQ knowledge scores improved significantly (pretest mean 60% vs posttest mean 80%, P<.001). Across all contoured structures, there was a 0.20 median improvement in students' average Dice score (P<.001). For individual structures, significant Dice improvements occurred in 10 structures. Residents self-reported an improved ability to contour OARs and interpret radiographs in all anatomic sites, 92% of students found the MDT format effective for their learning, and 93% found the boot camp

Evaluating the Impact of a Canadian National Anatomy and Radiology Contouring Boot Camp for Radiation Oncology Residents

International Nuclear Information System (INIS)

Jaswal, Jasbir; D'Souza, Leah; Johnson, Marjorie; Tay, KengYeow; Fung, Kevin; Nichols, Anthony; Landis, Mark; Leung, Eric; Kassam, Zahra; Willmore, Katherine; D'Souza, David; Sexton, Tracy; Palma, David A.

2015-01-01

Background: Radiation therapy treatment planning has advanced over the past 2 decades, with increased emphasis on 3-dimensional imaging for target and organ-at-risk (OAR) delineation. Recent studies suggest a need for improved resident instruction in this area. We developed and evaluated an intensive national educational course (“boot camp”) designed to provide dedicated instruction in site-specific anatomy, radiology, and contouring using a multidisciplinary (MDT) approach. Methods: The anatomy and radiology contouring (ARC) boot camp was modeled after prior single-institution pilot studies and a needs-assessment survey. The boot camp incorporated joint lectures from radiation oncologists, anatomists, radiologists, and surgeons, with hands-on contouring instruction and small group interactive seminars using cadaveric prosections and correlative axial radiographs. Outcomes were evaluated using pretesting and posttesting, including anatomy/radiology multiple-choice questions (MCQ), timed contouring sessions (evaluated relative to a gold standard using Dice similarity metrics), and qualitative questions on satisfaction and perceived effectiveness. Analyses of pretest versus posttest scores were performed using nonparametric paired testing. Results: Twenty-nine radiation oncology residents from 10 Canadian universities participated. As part of their current training, 29%, 75%, and 21% receive anatomy, radiology, and contouring instruction, respectively. On posttest scores, the MCQ knowledge scores improved significantly (pretest mean 60% vs posttest mean 80%, P<.001). Across all contoured structures, there was a 0.20 median improvement in students' average Dice score (P<.001). For individual structures, significant Dice improvements occurred in 10 structures. Residents self-reported an improved ability to contour OARs and interpret radiographs in all anatomic sites, 92% of students found the MDT format effective for their learning, and 93% found the boot camp

OB/GYN boot cAMP using high-fidelity human simulators: enhancing residents' perceived competency, confidence in taking a leadership role, and stress hardiness.

Science.gov (United States)

Pliego, Jose F; Wehbe-Janek, Hania; Rajab, M Hasan; Browning, Jeff L; Fothergill, Russell E

2008-01-01

To evaluate the effectiveness of an obstetrical and gynecologic (Ob/Gyn) Boot Camp simulation training on perceived technical competency, confidence in a leadership role, and stress hardiness of resident training. We conducted a prospective pilot study on the effectiveness of an Ob/Gyn Boot Camp on resident training. Residents participated in an intensive immersion in clinical simulation of common obstetrical emergencies including shoulder dystocia, neonatal resuscitation, postpartum hemorrhage, and ruptured ectopic pregnancy. After the training, residents completed a Web-based survey on their perceptions of how the Ob/Gyn Boot Camp affected their 1) technical competency in the assessment and management of their patients, 2) confidence in taking a leadership role, and 3) stress hardiness. Residents rated their perceptions on a Likert scale of 1 to 5, 1 = poor to 5 = excellent. Twenty-three (14 Ob/Gyn and 9 family medicine) residents participated in this pilot study. Eighteen (78%) residents completed the online survey; 4 Ob/Gyn and 1 family medicine resident did not complete the survey. The residents reported that the simulation training stimulated an interest in learning key skills for obstetrical and gynecologic emergencies. Ob/Gyn residents reported significant improvement in their perceived technical competence and stress hardiness after the Boot Camp. However both Ob/Gyn and family medicine residents reported no significant improvement of confidence in their leadership abilities during obstetrical emergencies after the Boot Camp. Boot Camp simulation training early in the curriculum has the potential for enhancing residents' self-assessments of confidence, competency, and stress hardiness in managing obstetrical emergencies.

Evaluation of the usefulness of a MOSFET detector in an anthropomorphic phantom for 6-MV photon beam.

Science.gov (United States)

Kohno, Ryosuke; Hirano, Eriko; Kitou, Satoshi; Goka, Tomonori; Matsubara, Kana; Kameoka, Satoru; Matsuura, Taeko; Ariji, Takaki; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2010-07-01

In order to evaluate the usefulness of a metal oxide-silicon field-effect transistor (MOSFET) detector as a in vivo dosimeter, we performed in vivo dosimetry using the MOSFET detector with an anthropomorphic phantom. We used the RANDO phantom as an anthropomorphic phantom, and dose measurements were carried out in the abdominal, thoracic, and head and neck regions for simple square field sizes of 10 x 10, 5 x 5, and 3 x 3 cm(2) with a 6-MV photon beam. The dose measured by the MOSFET detector was verified by the dose calculations of the superposition (SP) algorithm in the XiO radiotherapy treatment-planning system. In most cases, the measured doses agreed with the results of the SP algorithm within +/-3%. Our results demonstrated the utility of the MOSFET detector for in vivo dosimetry even in the presence of clinical tissue inhomogeneities.

Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

International Nuclear Information System (INIS)

Baliga, B.J.; Walden, J.P.

1983-01-01

Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

Science.gov (United States)

Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

2011-01-01

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

In vivo measurements with MOSFET detectors in oropharynx and nasopharynx intensity-modulated radiation therapy

International Nuclear Information System (INIS)

Marcie, Serge; Charpiot, Elisabeth; Bensadoun, Rene-Jean; Ciais, Gaston; Herault, Joel; Costa, Andre; Gerard, Jean-Pierre

2005-01-01

Purpose: To evaluate the feasibility of in vivo measurements with metal oxide semiconductor field effect transistor (MOSFET) dosimeters for oropharynx and nasopharynx intensity-modulated radiation therapy (IMRT). Methods and Materials: During a 1-year period, in vivo measurements of the dose delivered to one or two points of the oral cavity by IMRT were obtained with MOSFET dosimeters. Measurements were obtained during each session of 48 treatment plans for 21 patients, all of whom were fitted with a custom-made mouth plate. Calculated and measured values were compared. Results: A total of 344 and 452 measurements were performed for the right and left sides, respectively, of the oral cavity. Seventy percent of the discrepancies between calculated and measured values were within ±5%. Uncertainties were due to interfraction patient positions, intrafraction patient movements, and interfraction MOSFET positions. Nevertheless, the discrepancies between the measured and calculated means were within ±5% for 92% and 95% of the right and left sides, respectively. Comparison of these discrepancies and the discrepancies between calculated values and measurements made on a phantom revealed that all differences were within ±5%. Conclusion: Our experience demonstrates the feasibility of in vivo measurements with MOSFET dosimeters for oropharynx and nasopharynx IMRT

A very-low-cost dosimeter based on the off-the-shelf CD4007 MOSFET array for in vivo radiotherapy applications

International Nuclear Information System (INIS)

Siebel, O.F.; Pereira, J.G.; Souza, R.S.; Ramirez-Fernandez, F.J.; Schneider, M.C.; Galup-Montoro, C.

2015-01-01

Purpose: This paper presents a low-cost MOSFET dosimeter suitable for in vivo radiotherapy applications. We analyze different methods to extract the threshold voltage and how this extraction is affected by the dose dependence of slope factor and carrier mobility. Also, we discuss fundamental aspects of the basic building blocks of a MOSFET dosimeter, namely, the radiation sensor, the reader circuit and temperature desensitization. Methods: Experiments with ionizing radiation (6 MV X-ray beams) were carried out at the Centro de Pesquisas Oncológicas (CEPON) using linear accelerators to test the MOSFET dosimeter. Results: The main performance parameters of the dosimeter prototype are radiation sensitivity about 100 mV/Gy (sensor's sensitivity is around 6.7 mV/Gy), thermal dependence of 0.5 cGy/°C, reproducibility is about 2.6%, and radiation beam attenuation of 0.14%. Conclusions: The MOSFET dosimeter described in this article, which combines a simple and accurate readout procedure with a small size, low-cost, cable/battery-free sensor and very little attenuation of the radiation beam is a very appealing option for in vivo dosimetry. - Highlights: • We present a low-cost, cable/battery-free MOSFET sensor for radiotherapy. • We analyze methods to extract the key MOSFET dosimetric parameter (V T ). • We discuss fundamental aspects of building blocks of a MOSFET dosimeter. • Reproducibility (2.6%) comparable to commercial MOSFET dosimeters (1.7%). • Similar responses to radiation with commercial TLDs (S.D. around 2%)

Information and Communication Technology: Design, Delivery, and Outcomes from a Nursing Informatics Boot Camp

Science.gov (United States)

Kleib, Manal; Simpson, Nicole; Rhodes, Beverly

2016-05-31

Information and communication technology (ICT) is integral in today’s healthcare as a critical piece of support to both track and improve patient and organizational outcomes. Facilitating nurses’ informatics competency development through continuing education is paramount to enhance their readiness to practice safely and accurately in technologically enabled work environments. In this article, we briefly describe progress in nursing informatics (NI) and share a project exemplar that describes our experience in the design, implementation, and evaluation of a NI educational event, a one-day boot camp format that was used to provide foundational knowledge in NI targeted primarily at frontline nurses in Alberta, Canada. We also discuss the project outcomes, including lessons learned and future implications. Overall, the boot camp was successful to raise nurses’ awareness about the importance of informatics in nursing practice.

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

Science.gov (United States)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks

International Nuclear Information System (INIS)

Djeffal, F.; Dibi, Z.; Hafiane, M.L.; Arar, D.

2007-01-01

The double gate (DG) MOSFET has received great attention in recent years owing to the inherent suppression of short channel effects (SCEs), excellent subthreshold slope (S), improved drive current (I ds ) and transconductance (gm), volume inversion for symmetric devices and excellent scalability. Therefore, simulation tools which can be applied to design nanoscale transistors in the future require new theory and modeling techniques that capture the physics of quantum transport accurately and efficiently. In this sense, this work presents the applicability of the artificial neural networks (ANN) for the design and simulation of a nanoelectronic DG MOSFET current source. The latter is based on the 2D numerical Non-Equilibrium Green's Function (NEGF) simulation of the current-voltage characteristics of an undoped symmetric DG MOSFET. Our results are discussed in order to obtain some new and useful information about the ULSI technology

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

Science.gov (United States)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Characterization of commercial MOSFET detectors and their feasibility for in-vivo HDR brachytherapy.

Science.gov (United States)

Phurailatpam, Reena; Upreti, Rituraj; Nojin Paul, Siji; Jamema, Swamidas V; Deshpande, Deepak D

2016-01-01

The present study was to investigate the use of MOSFET as an vivo dosimeter for the application of Ir-192 HDR brachytherapy treatments. MOSFET was characterized for dose linearity in the range of 50-1000 cGy, depth dose dependence from 2 to 7 cm, angular dependence. Signal fading was checked for two weeks. Dose linearity was found to be within 2% in the dose range (50-1000 cGy). The response varied within 8.07% for detector-source distance of 2-7 cm. The response of MOSFET with the epoxy side facing the source (0 degree) is the highest and the lowest response was observed at 90 and 270 degrees. Signal was stable during the study period. The detector showed high dose linearity and insignificant fading. But due to angular and depth dependence, care should be taken and corrections must be applied for clinical dosimetry. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

A Practical Hardware-Assisted Approach to Customize Trusted Boot for Mobile Devices

DEFF Research Database (Denmark)

Gonzalez, Javier; Hölzl, Michael; Riedl, Peter

2014-01-01

is maintained with the components that have been loaded in the boot process for later audit. The first approach is often criticized for locking down devices, thus reducing users’ freedom to choose software. The second lacks the mechanisms to enforce any form of run-time verification. In this paper, we present...

Proton dose distribution measurements using a MOSFET detector with a simple dose-weighted correction method for LET effects.

Science.gov (United States)

Kohno, Ryosuke; Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-04-04

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L-shaped bolus. The dose reproducibility, angular dependence and depth-dose response were evaluated using a 190 MeV proton beam. Depth-output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose-weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L-shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors.

Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects

Science.gov (United States)

Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-01-01

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L‐shaped bolus. The dose reproducibility, angular dependence and depth‐dose response were evaluated using a 190 MeV proton beam. Depth‐output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose‐weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L‐shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors. PACS number: 87.56.‐v

A Low-Power CMOS Piezoelectric Transducer Based Energy Harvesting Circuit for Wearable Sensors for Medical Applications

Directory of Open Access Journals (Sweden)

Taeho Oh

2017-12-01

Full Text Available Piezoelectric vibration based energy harvesting systems have been widely utilized and researched as powering modules for various types of sensor systems due to their ease of integration and relatively high energy density compared to RF, thermal, and electrostatic based energy harvesting systems. In this paper, a low-power CMOS full-bridge rectifier is presented as a potential solution for an efficient energy harvesting system for piezoelectric transducers. The energy harvesting circuit consists of two n-channel MOSFETs (NMOS and two p-channel MOSFETs (PMOS devices implementing a full-bridge rectifier coupled with a switch control circuit based on a PMOS device driven by a comparator. With a load of 45 kΩ, the output rectifier voltage and the input piezoelectric transducer voltage are 694 mV and 703 mV, respectably, while the VOUT versus VIN conversion ratio is 98.7% with a PCE of 52.2%. The energy harvesting circuit has been designed using 130 nm standard CMOS process.

Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs

International Nuclear Information System (INIS)

Seoane, N; Garcia-Loureiro, A; Aldegunde, M; Kalna, K; Asenov, A

2009-01-01

We investigate the level of statistical variability in implant free (IF) MOSFETs, which are one of the most promising candidates III–V channels implementation. We report results for the threshold voltage (V T ) fluctuations in aggressively scaled IF III–V MOSFETs induced by random discrete dopants in the δ-doping plane obtained using 3D drift–diffusion (D–D) device simulations. The D–D simulator is meticulously calibrated against results obtained from ensemble Monte Carlo device simulations. The simulated 30, 20 and 15 nm gate length In 0.75 Ga 0.25 As channel IF transistors exhibit threshold voltage standard deviations of 42, 58 and 61 mV, respectively, at a drain voltage of 0.1 V. At a drain voltage of 0.8 V, the threshold voltage standard deviations increase to 55, 71 and 81 mV, respectively. While the standard deviations of V T in the 30 and 20 nm IF MOSFETs are close to those observed in bulk Si MOSFETs with equivalent gate lengths, the threshold voltage standard deviation in the 15 nm gate length IF MOSFET is lower

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

Science.gov (United States)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

Energy Technology Data Exchange (ETDEWEB)

Onar, Omer C [ORNL; Tang, Lixin [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL; Miller (JNJ), John M. [JNJ-Miller PLC

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

Boot cAMP: educational outcomes after 4 successive years of preparatory simulation-based training at onset of internship.

Science.gov (United States)

Fernandez, Gladys L; Page, David W; Coe, Nicholas P; Lee, Patrick C; Patterson, Lisa A; Skylizard, Loki; St Louis, Myron; Amaral, Marisa H; Wait, Richard B; Seymour, Neal E

2012-01-01

Preparatory training for new trainees beginning residency has been used by a variety of programs across the country. To improve the clinical orientation process for our new postgraduate year (PGY)-1 residents, we developed an intensive preparatory training curriculum inclusive of cognitive and procedural skills, training activities considered essential for early PGY-1 clinical management. We define our surgical PGY-1 Boot Camp as preparatory simulation-based training implemented at the onset of internship for introduction of skills necessary for basic surgical patient problem assessment and management. This orientation process includes exposure to simulated patient care encounters and technical skills training essential to new resident education. We report educational results of 4 successive years of Boot Camp training. Results were analyzed to determine if performance evidenced at onset of training was predictive of later educational outcomes. Learners were PGY-1 residents, in both categorical and preliminary positions, at our medium-sized surgical residency program. Over a 4-year period, from July 2007 to July 2010, all 30 PGY-1 residents starting surgical residency at our institution underwent specific preparatory didactic and skills training over a 9-week period. This consisted of mandatory weekly 1-hour and 3-hour sessions in the Simulation Center, representing a 4-fold increase in time in simulation laboratory training compared with the remainder of the year. Training occurred in 8 procedural skills areas (instrument use, knot-tying, suturing, laparoscopic skills, airway management, cardiopulmonary resuscitation, central venous catheter, and chest tube insertion) and in simulated patient care (shock, surgical emergencies, and respiratory, cardiac, and trauma management) using a variety of high- and low-tech simulation platforms. Faculty and senior residents served as instructors. All educational activities were structured to include preparatory materials

A comparison between the use of intravenous bags and the Heelift suspension boot to prevent pressure ulcers in orthopedic patients.

Science.gov (United States)

Bales, Isabel

2012-03-01

The heel is the second most common area where patients develop pressure ulcers (PrUs). Some of the interventions commonly used today to prevent PrUs have not been empirically tested, whereas other interventions have been studied and shown to prevent heel PrUs. Currently, there are no specific studies comparing a pressure-relieving suspension boot with the use of intravenous bags. This quasi-experimental study compared the use of these interventions to determine which intervention was more effective for heel-pressure relief. The target population consisted of a convenience sample of 30 patients admitted to the hospital for hip or knee surgery. Subjects were randomized to intravenous bags or pressure-relieving suspension boots. Daily pressure assessment of heels and the Achilles area was completed using validated pressure scales. Data were analyzed using the SPSS statistical program and were then used to determine the extent to which signs and symptoms of pressure were associated with each intervention. The results demonstrated a significant difference between the pressure-relieving suspension boot and the intravenous bag as heel-pressure-relief methods. Based on the statistical results of this study, the pressure-relieving suspension boot (Heelift; DM Systems Inc, Evanston, Illinois) was the better clinical intervention for patients with decreased mobility.

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy.

Science.gov (United States)

Haughey, Aisling; Coalter, George; Mugabe, Koki

2011-09-01

The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

Experience of using MOSFET detectors for dose verification measurements in an end-to-end 192Ir brachytherapy quality assurance system.

Science.gov (United States)

Persson, Maria; Nilsson, Josef; Carlsson Tedgren, Åsa

Establishment of an end-to-end system for the brachytherapy (BT) dosimetric chain could be valuable in clinical quality assurance. Here, the development of such a system using MOSFET (metal oxide semiconductor field effect transistor) detectors and experience gained during 2 years of use are reported with focus on the performance of the MOSFET detectors. A bolus phantom was constructed with two implants, mimicking prostate and head & neck treatments, using steel needles and plastic catheters to guide the 192 Ir source and house the MOSFET detectors. The phantom was taken through the BT treatment chain from image acquisition to dose evaluation. During the 2-year evaluation-period, delivered doses were verified a total of 56 times using MOSFET detectors which had been calibrated in an external 60 Co beam. An initial experimental investigation on beam quality differences between 192 Ir and 60 Co is reported. The standard deviation in repeated MOSFET measurements was below 3% in the six measurement points with dose levels above 2 Gy. MOSFET measurements overestimated treatment planning system doses by 2-7%. Distance-dependent experimental beam quality correction factors derived in a phantom of similar size as that used for end-to-end tests applied on a time-resolved measurement improved the agreement. MOSFET detectors provide values stable over time and function well for use as detectors for end-to-end quality assurance purposes in 192 Ir BT. Beam quality correction factors should address not only distance from source but also phantom dimensions. Copyright © 2017 American Brachytherapy Society. Published by Elsevier Inc. All rights reserved.

Evaluation of SEGR threshold in power MOSFETs

International Nuclear Information System (INIS)

Allenspach, M.; Brews, J.R.; Mouret, I.; Schrimpf, R.D.; Galloway, K.F.

1994-01-01

Bias values, determined experimentally to result in single-event gate rupture (SEGR) in power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device simulations, incorporating the experimental geometry. The simulations indicate that very short time oxide field transients occur for ion strikes when V DS ≠ 0V. These transients can affect SEGR through hole trapping and redistribution in the oxide

DC Characterization of Different Advanced MOSFET Architectures

International Nuclear Information System (INIS)

Jomaah, J.; Fadlallah, M.; Ghibaudo, G.

2011-01-01

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET's and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures. (author)

Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs

Science.gov (United States)

De, Swapnadip; Sarkar, Angsuman; Sarkar, Chandan Kumar

2011-10-01

This article presents an analytical surface potential, threshold voltage and drain current model for asymmetric pocket-implanted, single-halo dual material gate and double-halo dual material gate (DHDMG) n-MOSFET (MOSFET, metal-oxide-semiconductor field-effect transistor) operating up to 40 nm regime. The model is derived by applying Gauss's law to a rectangular box, covering the entire depletion region. The asymmetric pocket-implanted model takes into account the effective doping concentration of the two linear pocket profiles at the source and the drain ends along with the inner fringing capacitances at both the source and the drain ends and the subthreshold drain and the substrate bias effect. Using the surface potential model, the threshold voltage and drain currents are estimated. The same model is used to find the characteristic parameters for dual-material gate (DMG) with halo implantations and double gate. The characteristic improvement is investigated. It is concluded that the DHDMG device structure exhibits better suppression of the short-channel effect (SCE) and the threshold voltage roll-off than DMG and double-gate MOSFET. The adequacy of the model is verified by comparing with two-dimensional device simulator DESSIS. A very good agreement of our model with DESSIS is obtained proving the validity of our model used in suppressing the SCEs.

Identification of aeroelastic forces on bridge cables from full-scale measurements

DEFF Research Database (Denmark)

Acampora, Antonio; Macdonald, J.H.G.; Georgakis, Christos

2011-01-01

Despite much research in recent years, large amplitude vibrations of inclined cables continue to be of concern for cable-stayed bridges. Various mechanisms have been suggested for their excitation, including rain-wind excitation, dry inclined cable galloping, high reduced velocity vortex shedding...... Bridge. The system records wind conditions and weather conditions, as well as accelerations of certain cables and a few locations on the deck and tower. Using state-of-the-art methods of output-only system identification, the vibration modes of the cables have been identified. From these modes...

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

Science.gov (United States)

Asenov, Asen; Brown, A. R.; Slavcheva, G.; Davies, J. H.

2000-01-01

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain

Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

Directory of Open Access Journals (Sweden)

Sergej Makovejev

2014-07-01

Full Text Available The global variability of ultra-thin body and buried oxide (UTBB MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL, gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the transconductance over drain current (gm/Id method is preferable for variability studies. It is demonstrated that the subthreshold drain current variability in short channel devices cannot be described by threshold voltage variability. It is suggested to include the effective body factor incorporating short channel effects in order to properly model the subthreshold drain current variability.

MOSFET analog memory circuit achieves long duration signal storage

Science.gov (United States)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Effect of patellar strap and sports tape on pain in patellar tendinopathy: A randomized controlled trial

NARCIS (Netherlands)

de Vries, A.; Zwerver, J.; Diercks, R.; Tak, I.; van Berkel, S.; van Cingel, R.; van der Worp, H.; van den Akker-Scheek, I.

2016-01-01

Numerous athletes with patellar tendinopathy (PT) use a patellar strap or sports tape during sports. This study's aim was to investigate the short-term effect of these orthoses on patellar tendon pain. Participants performed the single-leg decline squat, vertical jump test, and triple-hop test under

Effect of patellar strap and sports tape on pain in patellar tendinopathy : A randomized controlled trial

NARCIS (Netherlands)

Vries , de A.; Zwerver, J.; Diercks, R.; Tak, I.; van Berkel, S.; van Cingel, R.; van der Worp, H.; van den Akker-Scheek, I.

2016-01-01

Numerous athletes with patellar tendinopathy (PT) use a patellar strap or sports tape during sports. This study's aim was to investigate the short-term effect of these orthoses on patellar tendon pain. Participants performed the single-leg decline squat, vertical jump test, and triple-hop test under

Track-Bridge Longitudinal Interaction of Continuous Welded Rails on Arch Bridge

Directory of Open Access Journals (Sweden)

Rong Chen

2013-01-01

Full Text Available Taking arch bridges, including deck, half-through, and through arch bridges (short for DAB, HTAB, and TAB as examples, mechanics analysis models of longitudinal interaction between continuously welded rails (short for CWRs and arch bridges are established. Based on the finite element method (FEM, the longitudinal interaction calculation software of CWR on arch bridges has been developed. Focusing on an HTAB, the tension, compression, and deflection conditions are calculated and analyzed. The results show that the mechanics analysis models of three types of arch bridges can truly reflect the real state of the structure; the calculation software can be used for systematic research of the CWR on arch bridge; as for HTAB, temperature difference of arch rib has a small effect on rail tension/compression, and arch bridge can be simplified as a continuous beam for rail tension/compression additional force calculation; in calculation of deflection conditions of HTAB, it is suggested that train loads are arranged on half span and full span and take the direction of load entering bridge into account. Additionally, the deflection additional force variation of CFST basket handle arch bridge is different from that of ordinary bridge.

2D Quantum Mechanical Study of Nanoscale MOSFETs

Science.gov (United States)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Pediatric Cardiology Boot Camp: Description and Evaluation of a Novel Intensive Training Program for Pediatric Cardiology Trainees.

Science.gov (United States)

Ceresnak, Scott R; Axelrod, David M; Motonaga, Kara S; Johnson, Emily R; Krawczeski, Catherine D

2016-06-01

The transition from residency to subspecialty fellowship in a procedurally driven field such as pediatric cardiology is challenging for trainees. We describe and assess the educational value of a pediatric cardiology "boot camp" educational tool designed to help prepare trainees for cardiology fellowship. A two-day intensive training program was provided for pediatric cardiology fellows in July 2015 at a large fellowship training program. Hands-on experiences and simulations were provided in: anatomy, auscultation, echocardiography, catheterization, cardiovascular intensive care (CVICU), electrophysiology (EP), heart failure, and cardiac surgery. Knowledge-based exams as well as surveys were completed by each participant pre-training and post-training. Pre- and post-exam results were compared via paired t tests, and survey results were compared via Wilcoxon rank sum. A total of eight participants were included. After boot camp, there was a significant improvement between pre- and post-exam scores (PRE 54 ± 9 % vs. POST 85 ± 8 %; p ≤ 0.001). On pre-training survey, the most common concerns about starting fellowship included: CVICU emergencies, technical aspects of the catheterization/EP labs, using temporary and permanent pacemakers/implantable cardiac defibrillators (ICDs), and ECG interpretation. Comparing pre- and post-surveys, there was a statistically significant improvement in the participants comfort level in 33 of 36 (92 %) areas of assessment. All participants (8/8, 100 %) strongly agreed that the boot camp was a valuable learning experience and helped to alleviate anxieties about the start of fellowship. A pediatric cardiology boot camp experience at the start of cardiology fellowship can provide a strong foundation and serve as an educational springboard for pediatric cardiology fellows.

A new calibration method for tri-axial field sensors in strap-down navigation systems

International Nuclear Information System (INIS)

Li, Xiang; Li, Zhi

2012-01-01

This paper presents a novel calibration method for tri-axial field sensors, such as magnetometers and accelerometers, in strap-down navigation systems. Strap-down tri-axial sensors have been widely used as they have the advantages of small size and low cost, but they need to be calibrated in order to ensure their accuracy. The most commonly used calibration method for a tri-axial field sensor is based on ellipsoid fitting, which has no requirement for external references. However, the self-calibration based on ellipsoid fitting is unable to determine and compensate the mutual misalignment between different sensors in a multi-sensor system. Therefore, a novel calibration method that employs the invariance of the dot product of two constant vectors is introduced in this paper. The proposed method, which is named dot product invariance method, brings a complete solution for the error model of tri-axial field sensors, and can solve the problem of alignment in a multi-sensor system. Its effectiveness and superiority over the ellipsoid fitting method are illustrated by numerical simulations, and its application on a digital magnetic compass shows significant enhancement of the heading accuracy. (paper)

Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency

Science.gov (United States)

Pardeshi, Hemant M.; Raj, Godwin; Pati, Sudhansu; Mohankumar, N.; Sarkar, Chandan Kumar

2013-08-01

In the work proposed, performance of dual material gate (DMG) AlInN/GaN underlap DG MOSFET has been analyzed and compared with the corresponding performance of single material gate (SMG) AlInN/GaN underlap DG MOSFET using Sentaurus TCAD device simulation. A systematic, quantitative investigation of key device metrics for DMG-DG device is presented and a comparison with SMG-DG device is done for a wide range of gate and underlap lengths. The key idea in this paper is to demonstrate the improved performance exhibited by DMG-DG device over SMG-DG device, due to enhanced carrier transport efficiency and suppressed short channel effect (SCE). Simulation reveals an improvement in drain current, drain induced barrier lowering (DIBL), Ion/Ioff, Delay and Energy Delay Product (EDP) for DMG-DG MOSFET as compared to SMG-DG MOSFET. Very high drain current of 6.7 mA/μm, low DIBL of 1.62 mV/V, high Ion/Ioff ratio of 4.044e107, low delay of 0.001 ps and low EDP of 1.37e-31 J s/μm are obtained for DGM-DG device. However, subthreshold slope (SS) for DMG-DG device is on higher side than SMG-DG. The proposed AlInN/GaN Heterostructure Underlap DGM-DG MOSFET shows excellent promise as one of the candidates to substitute present MOSFET for future high speed applications.

Early Career Boot Camp: a novel mechanism for enhancing early career development for psychologists in academic healthcare.

Science.gov (United States)

Foran-Tuller, Kelly; Robiner, William N; Breland-Noble, Alfiee; Otey-Scott, Stacie; Wryobeck, John; King, Cheryl; Sanders, Kathryn

2012-03-01

The purpose of this article is to describe a pilot mentoring program for Early Career Psychologists (ECPs) working in Academic Health Centers (AHCs) and synthesize the lessons learned to contribute to future ECP and AHC career development training programs. The authors describe an early career development model, named the Early Career Boot Camp. This intensive experience was conducted as a workshop meant to build a supportive network and to provide mentorship and survival tools for working in AHCs. Four major components were addressed: professional effectiveness, clinical supervision, strategic career planning, and academic research. Nineteen attendees who were currently less than 5 years post completion of doctoral graduate programs in psychology participated in the program. The majority of boot camp components were rated as good to excellent, with no component receiving below average ratings. Of the components offered within the boot camp, mentoring and research activities were rated the strongest, followed by educational activities, challenges in AHCS, and promotion and tenure. The article describes the purpose, development, implementation, and assessment of the program in detail in an effort to provide an established outline for future organizations to utilize when mentoring ECPs.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

Directory of Open Access Journals (Sweden)

Guo-Neng Lu

2009-01-01

Full Text Available We present a single-transistor pixel for CMOS image sensors (CIS. It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

The improvement of MOSFET prediction in space environments using the conversion model

International Nuclear Information System (INIS)

Shvetzov-Shilovsky, I.N.; Cherepko, S.V.; Pershenkov, V.S.

1994-01-01

The modeling of MOS device response to a low dose rate irradiation has been performed. The existing conversion model based on the linear dependence between positive oxide charge annealing and interface trap buildup accurately predicts the long time response of MOSFETs with relatively thick oxides but overestimates the threshold voltage shift for radiation hardened MOSFETs with thin oxides. To give an explanation to this fact, the authors investigate the impulse response function for threshold voltage. A revised model, which incorporates the different energy levels of hole traps in the oxide improves the fit between the model and data and gives an explanation to the fitting parameters dependence on oxide field

Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

Energy Technology Data Exchange (ETDEWEB)

Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Shekhawat, Gajendra [Northwestern University, Evanston; Dravid, Vinayak [Northwestern University, Evanston; Tulip, Fahmida S [ORNL

2011-01-01

In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/ L.

A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

International Nuclear Information System (INIS)

Lin, Jyi-Tsong; Lee, Tai-Yi; Lin, Kao-Cheng

2008-01-01

A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase

Single-event burnout hardening of planar power MOSFET with partially widened trench source

Science.gov (United States)

Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

2018-03-01

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

Directory of Open Access Journals (Sweden)

Arash Daghighi

2011-01-01

Full Text Available In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.

Control and design of full-bridge three-level converter for renewable energy sources

DEFF Research Database (Denmark)

Yao, Zhilei; Xu, Jing; Guerrero, Josep M.

2015-01-01

Output voltage of renewable energy sources, such as fuel cell and PV cell, is often low and varies widely with load and environmental conditions. Therefore, the high step-up DC-DC converter is needed between renewable energy sources and the grid-connected inverter. However, voltage stress...... of rectifier diodes is high and filter is large in traditional voltage-source converters in a wide input-voltage range. In order to solve the aforementioned problems, a full-bridge (FB) three-level (TL) converter is proposed. It can operate at both two-level and three-level modes, so it is suitable for wide...

MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

Science.gov (United States)

Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

2011-10-15

In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

Monte Carlo modeling of a High-Sensitivity MOSFET dosimeter for low- and medium-energy photon sources

International Nuclear Information System (INIS)

Wang, Brian; Kim, C.-H.; Xu, X. George

2004-01-01

Metal-oxide-semiconductor field effect transistor (MOSFET) dosimeters are increasingly utilized in radiation therapy and diagnostic radiology. While it is difficult to characterize the dosimeter responses for monoenergetic sources by experiments, this paper reports a detailed Monte Carlo simulation model of the High-Sensitivity MOSFET dosimeter using Monte Carlo N-Particle (MCNP) 4C. A dose estimator method was used to calculate the dose in the extremely thin sensitive volume. Efforts were made to validate the MCNP model using three experiments: (1) comparison of the simulated dose with the measurement of a Cs-137 source, (2) comparison of the simulated dose with analytical values, and (3) comparison of the simulated energy dependence with theoretical values. Our simulation results show that the MOSFET dosimeter has a maximum response at about 40 keV of photon energy. The energy dependence curve is also found to agree with the predicted value from theory within statistical uncertainties. The angular dependence study shows that the MOSFET dosimeter has a higher response (about 8%) when photons come from the epoxy side, compared with the kapton side for the Cs-137 source

Response Of A MOSFET To A Cosmic Ray

Science.gov (United States)

Benumof, Reuben; Zoutendyk, John A.

1988-01-01

Theoretical paper discusses response of enhancement-mode metal oxide/semiconductor field-effect transistor to cosmic-ray ion that passes perpendicularly through gate-oxide layers. Even if ion causes no permanent damage, temporary increase of electrical conductivity along track of ion large enough and long enough to cause change in logic state in logic circuit containing MOSFET.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

Modeling transient radiation effects in power MOSFETS

International Nuclear Information System (INIS)

Hoffman, J.R.; Hall, W.E.; Dunn, D.E.

1987-01-01

Using standard device specifications and simple assumptions, the transient radiation response of VDMOS MOSFETs can be modeled in a standard circuit analysis program. The device model consists of a body diode, a parasitic bipolar transistor, and elements to simulate high-current reduced breakdown. The attached photocurrent model emulates response to any pulse shape and accounts for bias-dependent depletion regions. The model can be optimized to best fit available test data

Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

International Nuclear Information System (INIS)

Gupta, Santosh K.; Baishya, Srimanta

2013-01-01

A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate (CSG) MOSFETs has been developed. Based on this a subthreshold drain current model has also been derived. This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model. The fringing gate capacitances taken into account are outer fringe capacitance, inner fringe capacitance, overlap capacitance, and sidewall capacitance. The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily. (semiconductor devices)

High voltage MOSFET devices and methods of making the devices

Science.gov (United States)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2018-06-05

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

High voltage MOSFET devices and methods of making the devices

Science.gov (United States)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

Science.gov (United States)

Lauenstein, Jean-Marie; Liu, Sandra; Titus, Jeffrey L.; McMorrow, Dale; Casey, Megan C.; Buchner, Stephen P.; Warner, Jeffrey; Phan, Anthony M.; Topper, Alyson D.; Kim, Hak S.;

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

DEFF Research Database (Denmark)

Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.

2017-01-01

The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within...... this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology....

Surveillance of Campylobacter ssp. in broiler flocks by PCR on boot sock samples

DEFF Research Database (Denmark)

Nordentoft, Steen; Lund, Marianne; Hald, Birthe

on sampling with one pair of boot sock was established. Samples were collected by the farmer app. 10 days before slaughter and send to laboratory for analysis. To detect Campylobacter ssp. in these fecal samples, a PCR based method was established and validated. The assay was developed as a genus specific...

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

Science.gov (United States)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

Clinical application of a OneDose MOSFET for skin dose measurements during internal mammary chain irradiation with high dose rate brachytherapy in carcinoma of the breast.

Science.gov (United States)

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Mahantshetty, Umesh M; Sarin, Rajiv; Deshpande, Deepak D; Shrivastava, Shyam K

2006-07-21

In our earlier study, we experimentally evaluated the characteristics of a newly designed metal oxide semiconductor field effect transistor (MOSFET) OneDose in-vivo dosimetry system for Ir-192 (380 keV) energy and the results were compared with thermoluminescent dosimeters (TLDs). We have now extended the same study to the clinical application of this MOSFET as an in-vivo dosimetry system. The MOSFET was used during high dose rate brachytherapy (HDRBT) of internal mammary chain (IMC) irradiation for a carcinoma of the breast. The aim of this study was to measure the skin dose during IMC irradiation with a MOSFET and a TLD and compare it with the calculated dose with a treatment planning system (TPS). The skin dose was measured for ten patients. All the patients' treatment was planned on a PLATO treatment planning system. TLD measurements were performed to compare the accuracy of the measured results from the MOSFET. The mean doses measured with the MOSFET and the TLD were identical (0.5392 Gy, 15.85% of the prescribed dose). The mean dose was overestimated by the TPS and was 0.5923 Gy (17.42% of the prescribed dose). The TPS overestimated the skin dose by 9% as verified by the MOSFET and TLD. The MOSFET provides adequate in-vivo dosimetry for HDRBT. Immediate readout after irradiation, small size, permanent storage of dose and ease of use make the MOSFET a viable alternative for TLDs.

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Directory of Open Access Journals (Sweden)

Huei Chaeng Chin

2014-01-01

Full Text Available Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET for applications in ultralarge-scale integration (ULSI is reported. GNRFET is found to be distinctly superior in the circuit-level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon-based electronics. Budding GNRFET, using the circuit-level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy-delay product (EDP and power-delay product (PDP of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current-voltage (Id-Vd and Id-Vg, for subthreshold swing (SS, drain-induced barrier lowering (DIBL, and current on/off ratio for circuit implementation is given. GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

A kinematic and kinetic analysis of drop landings in military boots.

Science.gov (United States)

Oliver, G D; Stone, A J; Booker, J M; Plummer, H A

2011-09-01

The purpose of this study was to examine knee valgus in drop landings during three different footwear conditions and to examine the ground reaction forces exhibited during the drop landing in the three different footwear conditions. Sixteen male and female Reserve Officer Training Corps (ROTC) university undergraduate cadets (21 +/- 3 yrs, 79 +/- 12 kg, and 172 +/- 10 cm) volunteered to participate in the study. Kinematic data were collected while participants performed drop landings in three conditions: bare feet, tennis shoes, and issued military boots. Significant differences among footwear for ground reaction forces (bare feet: 1646 +/- 359%, tennis shoe: 1880 +/- 379%, boot: 1833 +/- 438%; p knee valgus among footwear. Though footwear conditions did not affect knee valgus, they did affect ground reaction forces. Participants in this study had yet to receive any military training on how to land properly from a specified height. Further research should be completed to analyze the kinematics and kinetics of the lower extremity during different landing strategies implemented by trained military personnel in order to better understand injury mechanisms of drop landings in this population. It is likely that injury prevention landing techniques would be beneficial if these were employed by the military and not just in the sporting community.

Exploring boot camps for ‘gatekeeper’ service courses in mathematics

Directory of Open Access Journals (Sweden)

Anita Campbell

2015-11-01

Full Text Available Pressure to increase the throughput of university students in ethical ways has been a catalyst for innovations to improve learning and student success. Student dropout occurs mostly in the first year of study and poor performance is a major contributor to dropout even if the underlying reason for the poor performance is not academic under-preparedness. This article discusses the design and implementation of a mathematics tutored reassessment programme (TRP or ‘boot camp’ to improve the pass rate of students writing supplementary examinations for first year engineering mathematics. Interviews with students and tutors suggest that the TRP cultivated positive affective changes in students. A notable result from this case study was that students who qualified for a reassessment with marks in the range 40%–44% (and who would not normally have been granted a supplementary examination outperformed students qualifying with marks of 45%–49%, for whom attendance at the TRP was optional. Theoretical motivations for five principles guiding the design of the TRP are discussed.

Digital Fuzzy logic and PI control of phase-shifted full-bridge current-doubler converter

DEFF Research Database (Denmark)

Török, Lajos; Munk-Nielsen, Stig

2011-01-01

Simple digital fuzzy logic voltage control of a phaseshifted full-bridge (PSFB) converter is proposed in this article. A comparison of the fuzzy controller and the classical PI voltage controller is presented and their effects on the converter dynamics are analyzed. Simulation model of the conver...... of the converter was built in Matlab/Simulink using PLECS. A 600W PSFB convert was designed and built and the control strategies were implemented in a 16 bit fixed point dsPIC microcontroller. The advantages and disadvantages of using Fuzzy logic control are highlighted....

Calculation of midplane dose for total body irradiation from entrance and exit dose MOSFET measurements.

Science.gov (United States)

Satory, P R

2012-03-01

This work is the development of a MOSFET based surface in vivo dosimetry system for total body irradiation patients treated with bilateral extended SSD beams using PMMA missing tissue compensators adjacent to the patient. An empirical formula to calculate midplane dose from MOSFET measured entrance and exit doses has been derived. The dependency of surface dose on the air-gap between the spoiler and the surface was investigated by suspending a spoiler above a water phantom, and taking percentage depth dose measurements (PDD). Exit and entrances doses were measured with MOSFETs in conjunction with midplane doses measured with an ion chamber. The entrance and exit doses were combined using an exponential attenuation formula to give an estimate of midplane dose and were compared to the midplane ion chamber measurement for a range of phantom thicknesses. Having a maximum PDD at the surface simplifies the prediction of midplane dose, which is achieved by ensuring that the air gap between the compensator and the surface is less than 10 cm. The comparison of estimated midplane dose and measured midplane dose showed no dependence on phantom thickness and an average correction factor of 0.88 was found. If the missing tissue compensators are kept within 10 cm of the patient then MOSFET measurements of entrance and exit dose can predict the midplane dose for the patient.

Analog Amplitude Modulation of a High Voltage, Solid State Inductive Adder, Pulse Generator Using MOSFETS

International Nuclear Information System (INIS)

Gower, E J; Sullivan, J S

2002-01-01

High voltage, solid state, inductive adder, pulse generators have found increasing application as fast kicker pulse modulators for charged particle beams. The solid state, inductive adder, pulse generator is similar in operation to the linear induction accelerator. The main difference is that the solid state, adder couples energy by transformer action from multiple primaries to a voltage summing stalk, instead of an electron beam. Ideally, the inductive adder produces a rectangular voltage pulse at the load. In reality, there is usually some voltage variation at the load due to droop on primary circuit storage capacitors, or, temporal variations in the load impedance. Power MOSFET circuits have been developed to provide analog modulation of the output voltage amplitude of a solid state, inductive adder, pulse generator. The modulation is achieved by including MOSFET based, variable subtraction circuits in the multiple primary stack. The subtraction circuits can be used to compensate for voltage droop, or, to tailor the output pulse amplitude to provide a desired effect in the load. Power MOSFET subtraction circuits have been developed to modulate short, temporal (60-400 ns), voltage and current pulses. MOSFET devices have been tested up to 20 amps and 800 Volts with a band pass of 50 MHz. An analog modulation cell has been tested in a five cell high, voltage adder stack

Agile deployment and code coverage testing metrics of the boot software on-board Solar Orbiter's Energetic Particle Detector

Science.gov (United States)

Parra, Pablo; da Silva, Antonio; Polo, Óscar R.; Sánchez, Sebastián

2018-02-01

In this day and age, successful embedded critical software needs agile and continuous development and testing procedures. This paper presents the overall testing and code coverage metrics obtained during the unit testing procedure carried out to verify the correctness of the boot software that will run in the Instrument Control Unit (ICU) of the Energetic Particle Detector (EPD) on-board Solar Orbiter. The ICU boot software is a critical part of the project so its verification should be addressed at an early development stage, so any test case missed in this process may affect the quality of the overall on-board software. According to the European Cooperation for Space Standardization ESA standards, testing this kind of critical software must cover 100% of the source code statement and decision paths. This leads to the complete testing of fault tolerance and recovery mechanisms that have to resolve every possible memory corruption or communication error brought about by the space environment. The introduced procedure enables fault injection from the beginning of the development process and enables to fulfill the exigent code coverage demands on the boot software.

Thermo-structural optimization of the ITER ICRH Four Port Junction and Straps against in-vessel design criteria

International Nuclear Information System (INIS)

Lafuente, Antonio; Fursdon, Mike; Shannon, Mark

2014-01-01

Design optimization work has been conducted on the ITER Ion Cyclotron Resonance Heating (ICRH) Four Port Junction (4PJ) and Straps – a sub-assembly of the antenna. The aim of the analysis is to evaluate ways of making the component compliant with SDC-IC rules while balancing the competing demands of different performance requirements. Of particular interest are the bends that connect the 316L(N) strap pipes to its housing, where previous work had shown that primary plus secondary stresses would result in a low predicted fatigue life. The aim of the study was to explore the possibility of reducing stresses in these bends. Coupled ANSYS CFX and structural models are used to calculate coolant and metal temperatures and resulting stresses due to incident and self-generated heat. Although all of the modifications explored resulted in primary plus secondary stresses exceeding the cyclic damage design criteria, some avenues are identified for future studies and a reduction in stress toward the target is obtained

Build-up and surface dose measurements on phantoms using micro-MOSFET in 6 and 10 MV x-ray beams and comparisons with Monte Carlo calculations

International Nuclear Information System (INIS)

Xiang, Hong F.; Song, Jun S.; Chin, David W. H.; Cormack, Robert A.; Tishler, Roy B.; Makrigiorgos, G. Mike; Court, Laurence E.; Chin, Lee M.

2007-01-01

This work is intended to investigate the application and accuracy of micro-MOSFET for superficial dose measurement under clinically used MV x-ray beams. Dose response of micro-MOSFET in the build-up region and on surface under MV x-ray beams were measured and compared to Monte Carlo calculations. First, percentage-depth-doses were measured with micro-MOSFET under 6 and 10 MV beams of normal incidence onto a flat solid water phantom. Micro-MOSFET data were compared with the measurements from a parallel plate ionization chamber and Monte Carlo dose calculation in the build-up region. Then, percentage-depth-doses were measured for oblique beams at 0 deg. - 80 deg. onto the flat solid water phantom with micro-MOSFET placed at depths of 2 cm, 1 cm, and 2 mm below the surface. Measurements were compared to Monte Carlo calculations under these settings. Finally, measurements were performed with micro-MOSFET embedded in the first 1 mm layer of bolus placed on a flat phantom and a curved phantom of semi-cylindrical shape. Results were compared to superficial dose calculated from Monte Carlo for a 2 mm thin layer that extends from the surface to a depth of 2 mm. Results were (1) Comparison of measurements with MC calculation in the build-up region showed that micro-MOSFET has a water-equivalence thickness (WET) of 0.87 mm for 6 MV beam and 0.99 mm for 10 MV beam from the flat side, and a WET of 0.72 mm for 6 MV beam and 0.76 mm for 10 MV beam from the epoxy side. (2) For normal beam incidences, percentage depth dose agree within 3%-5% among micro-MOSFET measurements, parallel-plate ionization chamber measurements, and MC calculations. (3) For oblique incidence on the flat phantom with micro-MOSFET placed at depths of 2 cm, 1 cm, and 2 mm, measurements were consistent with MC calculations within a typical uncertainty of 3%-5%. (4) For oblique incidence on the flat phantom and a curved-surface phantom, measurements with micro-MOSFET placed at 1.0 mm agrees with the MC

Factors influencing the movements during the breeding season of a female booted eagle (Aquila pennata tagged by satellite in central Catalonia (Spain

Directory of Open Access Journals (Sweden)

Bosch Josep

2016-12-01

Full Text Available Foraging movements during the breeding season are a poorly studied aspect of booted eagle behaviour. We have investigated the relationship between weather and other abiotic factors and foraging behaviour, and also resource use by a female booted eagle, tagged by satellite-GPS transmitter in central Catalonia, during summer 2012 and spring 2013. Generalized Linear Models (GLMs revealed that the distance travelled from the nest was significantly related to temperature, but also to the time of day and the age of chicks. Temperature also had a significant positive influence on flight altitude and the latter on flight speed. The Resource Utilization Function (RUF showed significant resource use in locations close to water (rivers and water bodies and also in agricultural areas, preferably close to urban areas and rivers. On the other hand, unlike in other areas of Spain, the use of the edges between forest and agricultural areas and forest areas themselves showed negative coefficients with values not significant, perhaps related to changes in prey availability in the traditional hunting grounds.

Half bridge resonant converter for ignition of thermal plasmas; Convertidor resonante de medio puente para la ignicion de plasmas termicos

Energy Technology Data Exchange (ETDEWEB)

Pena E, L

1998-12-31

In this work the background, design, implementation and performance of a half bridge resonant converter (HBRC) used as an electronic ignition system for arc plasma torch generation is presented. The significance of the design lies in its simplicity, versatility and low cost. The system operates like a high voltage supply attached to electrodes before gaseous breakdown and like open circuit when electric arc is established. Resonant converter is implemented with a high voltage and high speed power driver intended for control the power MOSFET transistors connected in half bridge topology with L C load. The HBRC operates besides interference into domestic electric supply line (120 V, 60 Hz) as well electric measurement devices. Advantages and limitations of the converter are reviewed. Experimental impedance variation in the medium as a function of frequency operation and some experiences in striking arcs are also presented. (Author).

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Directory of Open Access Journals (Sweden)

Jiabao Sun

2015-01-01

Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.