WorldWideScience

Sample records for bonded silicon nitride

  1. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  2. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk...... and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained....

  3. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  4. Diffusion bonding of silicon carbide and silicon nitride to austenitic stainless steel

    International Nuclear Information System (INIS)

    Krugers, J.P.; Ouden, G. den

    1989-01-01

    In this paper the results are reported of a study dealing with diffusion bonding of silicon carbide and silicon nitride (both reaction-bonded and hot-pressed) to austenitic stainless steel (type AISI 316). Experiments were carried out in high vacuum (in the range of 10 -3 -10 -4 Pa) and in an inert gas atmosphere (95 vol% Ar, 5 vol% H 2 ), at temperatures between 1000 and 1300deg C and at various pressures. It was found that under specific conditions the steel could be bonded to both grades of silicon nitride. It was not possible, however, to produce an acceptable bond between steel and silicon carbide. The bonded combinations were tested mechanically by means of shear strength testing. It was found that the higher the process temperature or the longer the process time the stronger the bond. (orig.)

  5. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......, the current bonding method can be also used for further MEMS applications. ...

  6. Pressure bonding molybdenum alloy (TZM) to reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Huffsmith, S.A.; Landingham, R.L.

    1978-01-01

    Topping cycles could boost the energy efficiencies of a variety of systems by using what is now waste heat. One such topping cycle uses a ceramic helical expander and would require that a reaction-bonded silicon nitride (RBSN) rotor be bonded to a shaft of TZM (Mo-0.5 wt % Ti-0.08 wt % Zr). Coupon studies show that TZM can be bonded to RBSN at 1300 0 C and 69 MPa if there is an interlayer of MoSi 2 . A layer of finely ground (10 μm) MoSi 2 facilitates bond formation and provides a thicker bond interface. The hardness and grain structure of the TZM and RBSN were not affected by the temperature and pressure required to bond the coupons

  7. Geometrical Deviation and Residual Strain in Novel Silicon-on-Aluminium-Nitride Bonded Wafers

    Science.gov (United States)

    Men, Chuan-Ling; Xu, Zheng; Wu, Yan-Jun; An, Zheng-Hua; Xie, Xin-Yun; Lin, Cheng-Lu

    2002-11-01

    Aluminium nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alternative to the SiO2 layer in traditional silicon-on-insulator (SOI) materials. The silicon-on-aluminium-nitride (SOAN) structure was fabricated by the smart-cut process to alleviate the self-heating effects for traditional SOI. The convergent beam Kikuchi line diffraction pattern results show that some rotational misalignment exists when two wafers are bonded, which is about 3°. The high-resolution x-ray diffraction result indicates that, before annealing at high temperature, the residual lattice strain in the top silicon layer is tensile. After annealing at 1100°C for an hour, the strain in the top Si decreases greatly and reverses from tensile to slightly compressive as a result of viscous flow of AlN.

  8. Effect of hot isostatic pressing on reaction-bonded silicon nitride

    Science.gov (United States)

    Watson, G. K.; Moore, T. J.; Millard, M. L.

    1984-01-01

    Specimens of nearly theoretical density have been obtained through the isostatic hot pressing of reaction-bonded silicon nitride under 138 MPa of pressure for two hours at 1850, 1950, and 2050 C. An amorphous phase that is introduced by the hot isostatic pressing partly accounts for the fact that while room temperature flexural strength more than doubles, the 1200 C flexural strength increases significantly only after pressing at 2050 C.

  9. Steel bonded dense silicon nitride compositions and method for their fabrication

    Science.gov (United States)

    Landingham, R.L.; Shell, T.E.

    1985-05-20

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500/sup 0/C in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850/sup 0/ to 950/sup 0/C in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  10. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  11. Effect of loading rate on dynamic fracture of reaction bonded silicon nitride

    Science.gov (United States)

    Liaw, B. M.; Kobayashi, A. S.; Emery, A. F.

    1986-01-01

    Wedge-loaded, modified tapered double cantilever beam (WL-MTDCB) specimens under impact loading were used to determine the room temperature dynamic fracture response of reaction bonded silicon nitride (RBSN). The crack extension history, with the exception of the terminal phase, was similar to that obtained under static loading. Like its static counterpart, a distinct crack acceleration phase, which was not observed in dynamic fracture of steel and brittle polymers, was noted. Unlike its static counterpart, the crack continued to propagate at nearly its terminal velocity under a low dynamic stress intensity factor during the terminal phase of crack propagation. These and previously obtained results for glass and RBSN show that dynamic crack arrest under a positive dynamic stress intensity factor is unlikely in static and impact loaded structural ceramics.

  12. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  13. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  14. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    Science.gov (United States)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  15. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  16. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    International Nuclear Information System (INIS)

    Yeo, Reuben J.; Dwivedi, Neeraj; Bhatia, Charanjit S.; Zhang, Lu; Zhang, Zheng; Tripathy, S.; Lim, Christina Y. H.

    2015-01-01

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (∼10–20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ∼7 nm bilayer overcoat of silicon/silicon nitride (Si/SiN x ) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiN x /C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads

  17. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Scheeper, P.R.; Voorthuyzen, J.A.; Voorthuyzen, J.A.; Bergveld, Piet

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile

  18. Shock Response of Silicon Nitride

    Science.gov (United States)

    Dandekar, D. P.; Casem, D. T.; Motoyashiki, Y.; Sato, E.

    2009-06-01

    Silicon nitride is suitable for varied applications. The properties of silicon nitride have been tailored through processing and doping. The current work presents shock response of silicon nitride marketed as SN282. The density of this material, 3.4 Mg/m^3, exceeds its single crystal density due to the presence of lutetium oxide as an additive in ca. 5% by weight in the material. While the average grain size is 3.4 microns, aspect ratio of the grains exceed 3. Preliminary results of shock wave experiments may be summarized as follows: (1) The Hugoniot Elastic Limit (HEL) of SN282 is 11.2 GPa. (2) The magnitude of the inelastic wave velocity just above the HEL is 8.73 km/s, suggesting that inelastic deformation above the HEL is due to shock induced plasticity in the material. (3) The estimated value of the spall strength is 0.5 GPa. The spall strength of SN282 remains unchanged even when shocked beyond the HEL. The non-vanishing spall strength suggests that doping plays a role in the retention of spall strength of SN282. The role of doping needs to be further investigated.

  19. Zirconia doped silicon nitride ceramics

    International Nuclear Information System (INIS)

    Ekstroem, T.; Falk, L.K.L.; Knutson-Wedel, E.M.

    1992-01-01

    This presentation is concerned with the value added to silicon nitride ceramics by doping with smaller amounts of zirconia. The effects which the different sintering additives ZrO 2 , Y 2 O 3 stabilized ZrO 2 , Y 2 O 3 , Al 2 O 3 and AIN have upon densification, α- to β-Si 3 N 4 phase transformation and final microstructure are discussed. Silicon nitride ceramics containing these additives have been formed either by pressureless sintering or by hot isostatic pressing (HIP) at temperatures in the range 1550 to 1775 deg C. The fine scale microstructures of the densified materials, characterized by analytical electron microscopy and X-ray diffractometry, have been related to mechanical properties viz. strength, hardness and indentation fracture toughness. The most pronounced value added by ZrO 2 doping is that a properly adjusted combination of sintering aids makes it possible to substantially reduce the volume fraction of residual intergranular glass through formation of crystalline ZrO 2 (Y 2 O 3 ) solid solutions. This behaviours opens the possibility of developing new silicon nitride ceramics for high temperature applications. 25 refs., 4 figs

  20. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  1. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  2. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  3. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 µm and. 25 µm, and a sintered silicon ... the sintered silicon carbide was found out to be linked to its previous thermal history. Keywords. Indentation fatigue .... This presence of a grain size effect in the RIF behaviour of the ...

  4. Synthesis Of A Precursor Of Silicon Nitride

    Science.gov (United States)

    Philipp, Warren H.; Cornell, Linda; Lin, Y. C.

    1994-01-01

    Promising route toward production of highly pure, finely divided, easily sinterable silicon nitride (Si3N4) involves thermal decomposition of silicon diimide {Si(NH)2} prepared by ammonolysis of Si(SCN)4 in CH3CN and purified by complete extraction of byproduct NH4SCN by use of ammonia at temperature and pressure above critical point.

  5. Metal-ceramic interfaces: joining silicon nitride-stainless steel

    Science.gov (United States)

    Polanco, R.; De Pablos, A.; Miranzo, P.; Osendi, M. I.

    2004-11-01

    Joining of hot pressed silicon nitride using three types of stainless steel (AISI 304, 316 and 321) as interlayer was done by diffusion bonding at 1100 °C for 120 min. An extensive reaction zone of about 7 μm was formed in the contact region, where Cr2N, FexSiy and α-Fe were observed, outside that region the austenitic phase with precipitates of chromium nitride was observed. In the Mo-containing stainless steel (AISI 316) formation of Mo3Si was also detected. Moderate strengths were measured by shear testing for these joints.

  6. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  7. Thermal effects on the mechanical properties of SiC fibre reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1990-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  8. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  9. Development of high-thermal-conductivity silicon nitride ceramics

    Directory of Open Access Journals (Sweden)

    You Zhou

    2015-09-01

    Full Text Available Silicon nitride (Si3N4 with high thermal conductivity has emerged as one of the most promising substrate materials for the next-generation power devices. This paper gives an overview on recent developments in preparing high-thermal-conductivity Si3N4 by a sintering of reaction-bonded silicon nitride (SRBSN method. Due to the reduction of lattice oxygen content, the SRBSN ceramics could attain substantially higher thermal conductivities than the Si3N4 ceramics prepared by the conventional gas-pressure sintering of silicon nitride (SSN method. Thermal conductivity could further be improved through increasing the β/α phase ratio during nitridation and enhancing grain growth during post-sintering. Studies on fracture resistance behaviors of the SRBSN ceramics revealed that they possessed high fracture toughness and exhibited obvious R-curve behaviors. Using the SRBSN method, a Si3N4 with a record-high thermal conductivity of 177 Wm−1K−1 and a fracture toughness of 11.2 MPa m1/2 was developed. Studies on the influences of two typical metallic impurity elements, Fe and Al, on thermal conductivities of the SRBSN ceramics revealed that the tolerable content limits for the two impurities were different. While 1 wt% of impurity Fe hardly degraded thermal conductivity, only 0.01 wt% of Al caused large decrease in thermal conductivity.

  10. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  11. Dynamic Characterization of Silicon Nitride Cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.

    2009-01-01

    This thesis describes a series of experiments on dynamical characterization of silicon nitride cantilevers. These devices play an important role in micro-and nanoelectromechanical systems (MEMS and NEMS). They consist of a mechanical part, a sensor or actuator, and an electronic part for readout and

  12. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  13. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  14. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  15. Frequency effects and properties of plasma deposited fluorinated silicon nitride

    International Nuclear Information System (INIS)

    Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

    1988-01-01

    The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

  16. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    Synthesis and characterization of nano silicon and titanium nitride powders using atmospheric microwave plasma technique ... nucleation of silicon vapour produced by the radial injection of silicon tetrachloride vapour and nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor.

  17. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  18. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  19. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... telecommunication. However, silicon clustering appears in the thin films when annealing above 1150 oC. Clustering is undesirable in waveguide materials because the localized variations of the refractive index associated with the clusters lead to Raleigh scattering, which can cause significant propagation loss...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...

  20. Apparatus for silicon nitride precursor solids recovery

    Science.gov (United States)

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  1. Method for silicon nitride precursor solids recovery

    Science.gov (United States)

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  2. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    Science.gov (United States)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  3. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  4. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... telecommunication. However, silicon clustering appears in the thin films when annealing above 1150 oC. Clustering is undesirable in waveguide materials because the localized variations of the refractive index associated with the clusters lead to Raleigh scattering, which can cause significant propagation loss...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  5. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  6. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  7. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    ... nano titanium nitride was synthesized by using liquid titanium tetrachloride as the precursor. The synthesized nano silicon and titanium nitride powders were characterized by XRD, XPS, TEM, SEM and BET. The characterization techniques indicated that the synthesized powders were indeed crystalline nanomaterials.

  8. Infrared Dielectric Properties of Low-stress Silicon Nitride

    Science.gov (United States)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

    2012-01-01

    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  9. Stacking faults and phase transformations in silicon nitride

    Science.gov (United States)

    Milhet, X.; Demenet, J.-L.; Rabier, J.

    1998-11-01

    From observations of extended dislocation nodes in β silicon nitride, possible stacking fault structures in the basal plane of this compound have been investigated. It has been found that stacking fault structure is locally analogous to α silicon nitride. A phase transformation α to β or β to α can also be achieved by cooperative shear of partial dislocations with 1/3<~ngle1bar{1}00rangle Burgers vectors.

  10. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  11. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    Silicon nanoparticles attract a great deal of attention as they are used in logic gates, memory devices, light- emitting devices, sensors, bio-imaging, energy storage and photonic applications.1 Titanium nitride (TiN) is extensively used as an anti-wear coating,2 bio replace- ments,3 contact/barrier layer to silicon and as a gate.

  12. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  13. Hexacoordinate bonding and aromaticity in silicon phthalocyanine.

    Science.gov (United States)

    Yang, Yang

    2010-12-23

    Si-E bondings in hexacoordinate silicon phthalocyanine were analyzed using bond order (BO), energy partition, atoms in molecules (AIM), electron localization function (ELF), and localized orbital locator (LOL). Bond models were proposed to explain differences between hexacoordinate and tetracoordinate Si-E bondings. Aromaticity of silicon phthalocyanine was investigated using nucleus-independent chemical shift (NICS), harmonic oscillator model of aromaticity (HOMA), conceptual density functional theory (DFT), ring critical point (RCP) descriptors, and delocalization index (DI). Structure, energy, bonding, and aromaticity of tetracoordinate silicon phthalocyanine were studied and compared with hexacoordinate one.

  14. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

  15. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  16. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    Abstract. A time–temperature schedule for formation of silicon–nitride by direct nitridation of silicon com- pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). From kinetic study, three different temperature schedules were selected each ...

  17. Origin of interfacial charging in irradiated silicon nitride capacitors

    International Nuclear Information System (INIS)

    Hughes, R.C.

    1984-01-01

    Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO 2 -Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution

  18. Thermal effects on the mechanical properties of SiC fiber reinforced reaction bonded silicon nitride matrix (SiC/RBSN) composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1988-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  19. Dry Lubrication of High Temperature Silicon Nitride Rolling Contacts.

    Science.gov (United States)

    1980-11-01

    Ray Radiography A 150 mm x 15 mm x 3 mm slab was sliced from each HPSN billet received from Norton for this program. These sections were x-ray...that the micro- fissures did penetrate the silicon nitride, i.e., the microfis- sures were not confined to the thickness of the solid lubricant

  20. Damage initiation and evolution in silicon nitride under\

    Czech Academy of Sciences Publication Activity Database

    Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

    360-361, AUG (2016), s. 147-159 ISSN 0043-1648 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Rollingcontactfatigue * Subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.531, year: 2016

  1. Polarity inversion of aluminum nitride by direct wafer bonding

    Science.gov (United States)

    Hayashi, Yusuke; Katayama, Ryuji; Akiyama, Toru; Ito, Tomonori; Miyake, Hideto

    2018-03-01

    A novel fabrication process based on direct bonding technologies is proposed and demonstrated to achieve polarity inversion in AlN. High-angle annular dark-field scanning transmission electron microscopy observation clearly showed an atomically flat bonding interface and an abrupt transition from Al polarity (+c) to N polarity (‑c) through a single monolayer. This ideal polarity inversion of III–nitride materials is expected to provide new insight into heteropolar device applications.

  2. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  3. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  4. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  5. Nitrides

    International Nuclear Information System (INIS)

    Uehlls, A.

    1987-01-01

    The structure and certain properties of the ionic and covalent nitrides of alkali earth, rare earth, transition elements, cadmium, boron, indium and thorium are considered briefly. Peculiarities of the crystal structure, the structure of coordinated polyhedrons, the character and parameters of chemical bond depending on nitride composition are discussed

  6. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  7. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    Neamen, D.; Shedd, W.; Buchanan, B.

    1975-01-01

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  8. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...... temperature has an average hardness of 35.31 GPa, slightly larger than SiO2 stishovite, which is often referred to as the third hardest material after diamond and cubic boron nitride. The cubic phase is stable up to 1673 K in air. At 1873 K, alpha -and beta -Si3N4 phases are observed, indicating a phase...

  9. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Short, K.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Sol-gel bonds have been produced between smooth, clean silicon substrates by spin-coating solutions containing partially hydrolysed silicon alkoxides. The two coated substrates were assembled and the resulting sandwich fired at temperatures ranging from 60 to 600 deg. C. The sol-gel coatings were characterised using attenuated total reflectance Fourier transform infrared spectroscopy, ellipsometry, and atomic force microscopy, while the corresponding bonded specimens were investigated using scanning electron microscopy and cross-sectional transmission electron microscopy. Mechanical properties were characterised using both microindentation and tensile testing. Bonding of silicon wafers has been successfully achieved at temperatures as low as 60 deg. C. At 300 deg. C, the interfacial fracture energy was 1.55 J/m 2 . At 600 deg. C, sol-gel bonding provided superior interfacial fracture energy over classical hydrophilic bonding (3.4 J/m 2 vs. 1.5 J/m 2 ). The increase in the interfacial fracture energy is related to the increase in film density due to the sintering of the sol-gel interface with increasing temperature. The superior interfacial fracture energy obtained by sol-gel bonding at low temperature is due to the formation of an interfacial layer, which chemically bonds the two sol-gel coatings on each wafer. Application of a tensile stress on the resulting bond leads to fracture of the samples at the silicon/sol-gel interface

  10. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  11. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    OpenAIRE

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated membranes-“microsieves”) or for the coating of the exposed surfaces of sensors (field-effect transistors, waveguide optical detectors). To a more limited extent, silicon carbide (SiC) can find similar ...

  12. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  13. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding......Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...

  14. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  15. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    Science.gov (United States)

    1980-11-30

    Continuo on r.vers side it nec..eary and iden0 y by block nmber)I : silicon nitride ~ceramics :! corrosion strength oxidation 20. 4 ACT (Continue on...concentration that optimizes densifi- cation during hot pressing can be altered to improve mechanical properties and oxidation resistance by removing Mg...the intergranular phase to improve the high-temperature- strength, creep resistance, and oxidation resistance. Preoxidation followed by surface

  16. Sintering of silicon nitride ceramics with magnesium silicon nitride and yttrium oxide as sintering aids

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, J; Xu, J Y [Shanghai Institute of Technology, Shanghai 200235 (China); Peng, G H [Guangxi Normal University, Guilin 541004, Guangxi (China); Zhuang, H R; Li, W L; Xu, S Y [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mao, Y J, E-mail: guojianjiang@sit.edu.cn [Shanghai University, Shanghai 200444 (China)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramics had been produced through pressureless sintering and hot-pressing sintering with MgSiN{sub 2}-Y{sub 2}O{sub 3} or only MgSiN{sub 2} as sintering aids. The influences of the amount of MgSiN{sub 2} and Y{sub 2}O{sub 3} and sintering methods on the properties of Si{sub 3}N{sub 4} ceramics were investigated. The results show that the bend strength of Si{sub 3}N{sub 4} ceramic fabricated through pressureless sintering at 1820 deg. C for 4 h with 5.6 wt.% MgSiN{sub 2}-15.8 wt.% Y{sub 2}O{sub 3} as sintering additive could achieve 839 MPa. However, the bend strength of Si{sub 3}N{sub 4} ceramic produced by hot-pressing sintering at 1750 deg. C for 1 h under uniaxial pressure of 20 MPa with 4.76 wt.% MgSiN{sub 2} was 1149 MPa. The thermal conductivity of the Si{sub 3}N{sub 4} ceramic 2 3 4 could reach to 129 W{center_dot}m{sup -1{center_dot}}K{sup 1}. The present work demonstrated that MgSiN{sub 2} aids and hot-pressing sintering were effective to improve the thermal conductivity of Si{sub 3}N{sub 4} ceramic.

  17. High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

    DEFF Research Database (Denmark)

    Philipp, Hugh Taylor

    2004-01-01

    This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich...... silicon nitride. This provided a sharp contrast with silica and made low-loss waveguide bending radii less than 25mm possible. An immediate consequence of such small bending radii is the ability to make practical ring resonator based devices with a large free spectral range. Several ring resonator based...

  18. Fabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications

    NARCIS (Netherlands)

    Fernandez, L.J.; Berenschot, Johan W.; Wiegerink, Remco J.; Flokstra, Jakob; Flokstra, Jan; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior.

  19. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  20. Numerical modeling and experimental investigation of laser-assisted machining of silicon nitride ceramics

    Science.gov (United States)

    Shen, Xinwei

    Laser-assisted machining (LAM) is a promising non-conventional machining technique for advanced ceramics. However, the fundamental machining mechanism which governs the LAM process is not well understood so far. Hence, the main objective of this study is to explore the machining mechanism and provide guidance for future LAM operations. In this study, laser-assisted milling (LAMill) of silicon nitride ceramics is focused. Experimental experience reveals that workpiece temperature in LAM of silicon nitride ceramics determines the surface quality of the machined workpiece. Thus, in order to know the thermal features of the workpiece in LAM, the laser-silicon nitride interaction mechanism is investigated via heating experiments. The trends of temperature affected by the key parameters (laser power, laser beam diameter, feed rate, and preheat time) are obtained through a parametric study. Experimental results show that high operating temperature leads to low cutting force, good surface finish, small edge chipping, and low residual stress. The temperature range for brittle-to-ductile transition should be avoided due to the rapid increase of fracture toughness. In order to know the temperature distribution at the cutting zone in the workpiece, a transient three-dimensional thermal model is developed using finite element analysis (FEA) and validated through experiments. Heat generation associated with machining is considered and demonstrated to have little impact on LAM. The model indicates that laser power is one critical parameter for successful operation of LAM. Feed and cutting speed can indirectly affect the operating temperatures. Furthermore, a machining model is established with the distinct element method (or discrete element method, DEM) to simulate the dynamic process of LAM. In the microstructural modeling of a beta-type silicon nitride ceramic, clusters are used to simulate the rod-like grains of the silicon nitride ceramic and parallel bonds act as the

  1. Virtual Fabrication of Silicon Nitride Based Multifunctional MEMS Pressure Sensor

    Directory of Open Access Journals (Sweden)

    Mahesh Kumar PATANKAR

    2011-04-01

    Full Text Available This paper shows how to combine absolute and differential pressure sensor on single silicon substrate for measuring the pressure in 0 – 1 MPa range. In this work, the sensor makes use a of silicon nitride square diaphragm supported by a thick silicon rim. Piezoresistors below the diaphragms are defined by the p+ etch stop technique and structured by the anisotropic etching in Wheatstone bridge configuration. In event of pressure, mechanical deformation occurs in the diaphragm and induces the stress in it which can be translated into electrical signal accordingly. This sensor shows the sensitivity of 142 mV/V.KPa. The pressure sensor has been designed, simulated and virtually fabricated using Intellisuite MEMS software tool. Simulation results shows that the good agreement with the analytical solutions.

  2. Silicon waveguides produced by wafer bonding

    DEFF Research Database (Denmark)

    Poulsen, Mette; Jensen, Flemming; Bunk, Oliver

    2005-01-01

    X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 mu m broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides...

  3. Bio-functionalization of silicon nitride-based piezo-resistive ...

    Indian Academy of Sciences (India)

    Abstract. Methods of bio-functionalize silicon nitride involve process steps to convert it into an oxynitride via plasma implantation techniques. Such methods can potentially damage microstructures such as cantilevers. In this paper, we report suc- cessful bio-functionalization of Hotwire CVD silicon nitride-based piezo- ...

  4. Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

    Science.gov (United States)

    Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

    2018-01-01

    Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

  5. The deposition of silicon nitride films under low pressure on wafers up to 200 mm

    Directory of Open Access Journals (Sweden)

    Nalivaiko O. Yu.

    2012-12-01

    Full Text Available The influence of silicon nitride deposition condition on parameters of the obtained films has been investigated. It has been found that the deposition rate of silicon nitride films decreases with deposition temperature decreasing, and at the same time the within wafer thickness uniformity improves. It allows performing the reproducible deposition of silicon nitride films with thickness of less than 10 nm. It has been found that in order to decrease the oxidation depth of silicon nitride, it is appropriate to carry out the oxidation under 850—900°C. The developed process of silicon nitride deposition made it possible to obtain reservoir capacitors with specific capacitance of 3,8—3,9 fF/μm2 at film thickness of 7,0 nm.

  6. Comparison of properties in silicon nitrides sintered with oxide and organometallic additives

    International Nuclear Information System (INIS)

    Luxem, W.; Saruhan, B.

    1994-01-01

    An homogeneous introduction of sintering additives to silicon nitride powder compacts is of great importance in the fabrication of high strength silicon nitride ceramics. Inhomogenities and impurities brought into the compacts with addition of sintering additives may influence the microstructure and phase development and subsequently degrade the mechanical properties and reliability of silicon nitride ceramics. Sintering additives in the system of Sm 2 O 3 + Al 2 O 3 as metaloxides and nitrates are introduced to two different kinds of α-silicon nitride powder. Thereby, a more homogeneous distribution of additives through an intimate mixing is aimed. Advantages of this type of processing of silicon nitride powders against conventional method are discussed. The contribution of powder characteristics in determination of these factors are displayed. (orig.)

  7. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    weight gain. Green compact of density 66%, the nitridation schedule was maneuvered for complete nitridation. Iron promotes nitridation reaction. Higher weight loss during nitridation of iron doped compact is the main cause of lower ...

  8. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  9. Nanostructured silicon nitride from wheat and rice husks

    Science.gov (United States)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.

    2016-04-01

    Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

  10. Quality factor improvement of silicon nitride micro string resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Malm, Bjarke; Boisen, Anja

    2011-01-01

    Resonant micro and nano strings are of interest for sensor applications due to their extraordinary high quality factors, low mass and tunable resonant frequency. It has been found that the quality factor of strings is usually limited by clamping loss. In this work, clamping loss has been addressed...... by varying the clamping design and string geometry. We present silicon nitride micro strings with quality factors (Q) of up to 4 million in high vacuum achieved by minimizing clamping loss. For applications such as for chemical sensing, strings need to vibrate at atmospheric pressure. Maximal quality factor...

  11. Defects Detection on Silicon Nitride Balls by Laser Ultrasonics

    International Nuclear Information System (INIS)

    Lemaire, M.; Ouaftouh, M.; Duquennoy, M.; Jenot, F.; Ourak, M.

    2005-01-01

    In this work, we study the generation and the detection of surface waves on silicon nitride balls a few millimetres in diameter. The excitation of these waves is carried out thanks to a pulsed laser YAG and their detection is achieved with a laser interferometric probe. The whole of the device requires neither coupling nor direct contact with the balls. These waves are then used for the analysis of defects close to the surface of the balls. Several measurements are carried out on samples presenting various defects. Correlation attempts are also carried out between some ultrasonic parameters and some characteristics of defects

  12. Elastic properties of silicon nitride ceramics reinforced with graphene nanofillers

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Ramírez, C.; Koller, M.; Sedlák, Petr; Landa, Michal; Miranzo, P.; Belmonte, M.; Osendí, M. I.

    2015-01-01

    Roč. 87, December (2015), s. 675-680 ISSN 0264-1275 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 Keywords : multilayer graphene * graphene oxide (GO) * silicon nitride * elastic constants * elastic modulus * shear modulus Subject RIV: JI - Composite Materials Impact factor: 3.997, year: 2015 http://www.sciencedirect.com/science/article/pii/S0264127515302938/pdfft?md5=571e00fd7f976e9b66ed789ae2a868b2&pid=1-s2.0-S0264127515302938-main.pdf

  13. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Low temperature bonding of silicon wafers was achieved using sol-gel technology. The initial sol-gel chemistry of the coating solution was found to influence the mechanical properties of the resulting bonds. More precisely, the influence of parameters such as the alkoxide concentration, water-to-alkoxide molar ratio, pH, and solution aging on the final bond morphologies and interfacial fracture energy was studied. The thickness and density of the sol-gel coating were characterised using ellipsometry. The corresponding bonded specimens were investigated using attenuated total reflectance Fourier transformed infrared spectroscopy to monitor their chemical composition, infrared imaging to control bond integrity, and cross-sectional transmission electron microscopy to study their microstructure. Their interfacial fracture energy was measured using microindentation. An optimum water-to-alkoxide molar ratio of 10 and hydrolysis water at pH = 2 were found. Such conditions led to relatively dense films (> 90%), resulting in bonds with a fracture energy of 3.5 J/m 2 , significantly higher than those obtained using classical hydrophilic bonding (typically 1.5-2.5 J/m 2 ). Ageing of the coating solution was found to decrease the bond strength

  14. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

    Science.gov (United States)

    Kim, Tae Hun; Sim, Jae Sung; Lee, Jong Duk; Shin, Hyung Cheol; Park, Byung-Gook

    2004-07-01

    We investigated the charge decay characteristics of a silicon-oxide-nitride-oxide-silicon type nonvolatile memory at elevated temperatures. Based on the amphoteric trap model and the thermal emission model of the trapped charge, we propose an advanced charge decay model which includes the effect of the bottom oxide, and apply it to extraction of the trap density distribution in energy levels of the nitride layer. The samples prepared have nitride films deposited simultaneously and are classified into two groups according to the thickness of the bottom oxide. The trap density distributions extracted from two groups showed good consistency.

  15. The atomic and electronic structure of amorphous silicon nitride

    CERN Document Server

    Alvarez, F

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  16. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    Science.gov (United States)

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  17. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  18. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  19. Distribution patterns of different carbon nanostructures in silicon nitride composites.

    Science.gov (United States)

    Tapasztó, Orsolya; Markó, Márton; Balázsi, Csaba

    2012-11-01

    The dispersion properties of single- and multi-walled carbon nanotubes as well as mechanically exfoliated few layer graphene flakes within the silicon nitride ceramic matrix have been investigated. Small angle neutron scattering experiments have been employed to gain information on the dispersion of the nano-scale carbon fillers throughout the entire volume of the samples. The neutron scattering data combined with scanning electron microscopy revealed strikingly different distribution patterns for different types of carbon nanostructures. The scattering intensities for single wall carbon nanotubes (SWCNTs) reveal a decay exponent characteristic to surface fractals, which indicate that the predominant part of nanotubes can be found in loose networks wrapping the grains of the polycrystalline matrix. By contrast, multi wall carbon nanotubes (MWCNTs) were found to be present mainly in the form of bulk aggregate structures, while few-layer graphene (FLG) flakes have been individually dispersed within the host matrix, under the very same preparation and processing conditions.

  20. Soliton repetition rate in a silicon-nitride microresonator.

    Science.gov (United States)

    Bao, Chengying; Xuan, Yi; Wang, Cong; Jaramillo-Villegas, Jose A; Leaird, Daniel E; Qi, Minghao; Weiner, Andrew M

    2017-02-15

    The repetition rate of a Kerr comb composed of a single soliton in an anomalous group velocity dispersion silicon-nitride microcavity is measured as a function of pump frequency. By comparing operation in the soliton and non-soliton states, the contributions from the Raman soliton self-frequency shift (SSFS) and the thermal effects are evaluated; the SSFS is found to dominate the changes in the repetition rate, similar to silica cavities. The relationship between the changes in the repetition rate and the pump frequency detuning is found to be independent of the nonlinearity coefficient and dispersion of the cavity. Modeling of the repetition rate change by using the generalized Lugiato-Lefever equation is discussed; the Kerr shock is found to have only a minor effect on repetition rate for cavity solitons with duration down to ∼50  fs.

  1. Silicon nitride waveguide platform for fluorescence microscopy of living cells.

    Science.gov (United States)

    Tinguely, Jean-Claude; Helle, Øystein Ivar; Ahluwalia, Balpreet Singh

    2017-10-30

    Waveguide chip-based microscopy reduces the complexity of total internal reflection fluorescence (TIRF) microscopy, and adds features like large field of view illumination, decoupling of illumination and collection path and easy multimodal imaging. However, for the technique to become widespread there is a need of low-loss and affordable waveguides made of high-refractive index material. Here, we develop and report a low-loss silicon nitride (Si 3 N 4 ) waveguide platform for multi-color TIRF microscopy. Single mode conditions at visible wavelengths (488-660 nm) were achieved using shallow rib geometry. To generate uniform excitation over appropriate dimensions waveguide bends were used to filter-out higher modes followed by adiabatic tapering. Si 3 N 4 material is finally shown to be biocompatible for growing and imaging living cells.

  2. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  3. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    Science.gov (United States)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  4. Conductivity of materials made of aluminum nitride and silicon nitride mixtures

    Science.gov (United States)

    Gorbatov, A. G.; Kamyshov, V. M.

    1978-01-01

    To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.

  5. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    Science.gov (United States)

    Becher, Paul F [Oak Ridge, TN; Lin, Hua-Tay [Oak Ridge, TN

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  6. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  7. Urethane/Silicone Adhesives for Bonding Flexing Metal Parts

    Science.gov (United States)

    Edwards, Paul D.

    2004-01-01

    Adhesives that are blends of commercially available urethane and silicone adhesives have been found to be useful for bonding metal parts that flex somewhat during use. These urethane/silicone adhesives are formulated for the specific metal parts to be bonded. The bonds formed by these adhesives have peel and shear strengths greater than those of bonds formed by double-sided tapes and by other adhesives, including epoxies and neat silicones. In addition, unlike the bonds formed by epoxies, the bonds formed by these adhesives retain flexibility. In the initial application for which the urethane/silicone adhesives were devised, there was a need to bond spring rings, which provide longitudinal rigidity for inflatable satellite booms, with the blades that provide the booms axial strength. The problem was to make the bonds withstand the stresses, associated with differences in curvature between the bonded parts, that arose when the booms were deflated and the springs were compressed. In experiments using single adhesives (that is, not the urethane/ silicone blends), the bonds were broken and, in each experiment, it was found that the adhesive bonded well with either the ring or with the blade, but not both. After numerous experiments, the adhesive that bonded best with the rings and the adhesive that bonded best with the blades were identified. These adhesives were then blended and, as expected, the blend bonded well with both the rings and the blades. The two adhesives are Kalex (or equivalent) high-shear-strength urethane and Dow Corning 732 (or equivalent) silicone. The nominal mixture ratio is 5 volume parts of the urethane per 1 volume part of the silicone. Increasing the proportion of silicone makes the bond weaker but more flexible, and decreasing the proportion of silicone makes the bond stronger but more brittle. The urethane/silicone blend must be prepared and used quickly because of the limited working time of the urethane: The precursor of the urethane

  8. Chemical-vapor-infiltrated silicon nitride, boron nitride, and silicon carbide matrix composites

    International Nuclear Information System (INIS)

    Ventri, R.D.; Galasso, F.S.

    1990-01-01

    This paper reports composites of carbon/chemical-vapor-deposited (CVD) Si 3 N 4 , carbon/CVD BN, mullite/CVD SiC, and SiC yarn/CVD SiC prepared to determine if there were inherent toughness in these systems. The matrices were deposited at high enough temperatures to ensure that they were crystalline, which should make them more stable at high temperatures. The fiber-matrix bonding in the C/Si 3 N 4 composite appeared to be too strong; the layers of BN in the matrix of the C/BN were too weakly bonded; and the mullite/SiC composite was not as tough as the SiC/SiC composites. Only the SiC yarn/CVD SiC composite exhibited both strength and toughness

  9. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    Science.gov (United States)

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

  10. Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Giichiro; Yamamoto, Kosuke; Kawashima, Yuki; Sato, Muneharu; Nakahara, Kenta; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka (Japan); Kamataki, Kunihiro [Center for Reserch and Advancement in Higher Education, Kyushu University, Fukuoka (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

    2011-10-15

    We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH{sub 4}/H{sub 2} and N{sub 2} multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries

    Science.gov (United States)

    Penta, Naresh K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V.

    2013-10-01

    Four different anionic surfactants, sodium dodecyl sulfate, dodecyl benzene sulfonic acid (DBSA), dodecyl phosphate and Sodium lauroyl sarcosine, selected from the sulfate, phosphate, and carboxylic family, were investigated as additives in silica dispersions for selective polishing of silicon dioxide over silicon nitride films. We found that all these anionic surfactants suppress the nitride removal rates (RR) for pH ≤4 while more or less maintaining the oxide RRs, resulting in high oxide-to-nitride RR selectivity. The RR data obtained as a function of pH were explained based on pH dependent distributions of surfactant species, change in the zeta potentials of oxide and nitride surfaces, and thermogravimetric data. It appears that the negatively charged surfactant species preferentially adsorb on the positively charged nitride surface below IEP through its electrostatic interactions and form a bilayer adsorption, resulting in the suppression of nitride RRs. In contrast to the surfactants, K2SO4 interacts only weakly with the nitride surface and hence cannot suppress its RR.

  12. Microstructure and properties of ultrathin amorphous silicon nitride protective coating

    International Nuclear Information System (INIS)

    Yen, Bing K.; White, Richard L.; Waltman, Robert J.; Dai Qing; Miller, Dolores C.; Kellock, Andrew J.; Marchon, Bruno; Kasai, Paul H.; Toney, Michael F.; York, Brian R.; Deng Hong; Xiao Qifan; Raman, Vedantham

    2003-01-01

    The effect of N content on the structure and properties of rf reactively sputtered amorphous silicon nitride (a-SiN x ) has been studied by Rutherford backscattering spectrometry, x-ray reflectivity, ellipsometry, and nano-indentation. The N content in the film increased with the N 2 concentration in the sputtering gas until the Si 3 N 4 stoichiometry was reached. The hardness of a-SiN x increased with density, which in turn increased with the N content. The maximum hardness of 25 GPa and density of 3.2 g/cm 3 were attained at the stoichiometric Si 3 N 4 composition. With the application of a protective overcoat for magnetic disks in mind, thin a-SiN x films were deposited on CoPtCr media to examine their coverage, pinhole density, and wear resistance. According to x-ray photoelectron spectroscopy, the minimum thickness of a-SiN x required to protect the CoPtCr alloy from oxidation was 10 A, which was 10 A thinner than that of the reference amorphous nitrogenated carbon (a-CN x ). A statistic model showed this lower thickness required for a-SiN x can be attributed to its high density, which corresponds to 93% bulk density of Si 3 N 4 . Compared with 45 A a-CN x coated disks, 15 A a-SiN x coated disks had lower pinhole defect density and superior wear resistance

  13. Absorption edge and ion bombardment of silicon nitride

    International Nuclear Information System (INIS)

    Stein, H.J.

    1976-01-01

    The optical absorption edge for chemical-vapor-deposited silicon nitride films on sapphire substrates has been measured for different deposition conditions, and as a function of ion bombardment and subsequent annealing. An exponential form for the absorption edge, consistent with a disorder-limited edge, is observed for all films. While the slope of the absorption edge is independent of the measurement temperature, the energy for the edge decreases with increasing temperature by (2--4) x 10 -4 eV/degreeC. The energy and slope of the absorption edge are lower for films deposited at 760 degreeC than for films deposited at 1000 degreeC, and displacement damage introduced by ion bombardment causes a decrease in both the slope and energy for the edge. Ion-bombardment-induced changes saturate when the energy deposition into damage processes is approx.10 eV/atom. The effects of a lower deposition temperature and of ion bombardment upon the absorption edge are attributed to a degradation of short-range order. Annealing of the bombardment-induced effects occurs over a broad temperature range, and the prebombardment absorption edge is essentially recovered by annealing at the deposition temperature

  14. Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

    Directory of Open Access Journals (Sweden)

    Ashim Dhakal

    2017-02-01

    Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

  15. Isolation and characterization of a uranium(VI)-nitride triple bond

    Science.gov (United States)

    King, David M.; Tuna, Floriana; McInnes, Eric J. L.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T.

    2013-06-01

    The nature and extent of covalency in uranium bonding is still unclear compared with that of transition metals, and there is great interest in studying uranium-ligand multiple bonds. Although U=O and U=NR double bonds (where R is an alkyl group) are well-known analogues to transition-metal oxo and imido complexes, the uranium(VI)-nitride triple bond has long remained a synthetic target in actinide chemistry. Here, we report the preparation of a uranium(VI)-nitride triple bond. We highlight the importance of (1) ancillary ligand design, (2) employing mild redox reactions instead of harsh photochemical methods that decompose transiently formed uranium(VI) nitrides, (3) an electrostatically stabilizing sodium ion during nitride installation, (4) selecting the right sodium sequestering reagent, (5) inner versus outer sphere oxidation and (6) stability with respect to the uranium oxidation state. Computational analyses suggest covalent contributions to U≡N triple bonds that are surprisingly comparable to those of their group 6 transition-metal nitride counterparts.

  16. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices.

    Science.gov (United States)

    Muñoz-Rosas, Ana Luz; Rodríguez-Gómez, Arturo; Alonso-Huitrón, Juan Carlos

    2018-03-22

    Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  17. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  18. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  19. Elastocapillary folding of three dimensional micro-structures using water pumped through the wafer via a silicon nitride tube

    NARCIS (Netherlands)

    Legrain, A.B.H.; Berenschot, Johan W.; Sanders, Remco G.P.; Ma, Kechun; Tas, Niels Roelof; Abelmann, Leon

    2011-01-01

    In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water

  20. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    International Nuclear Information System (INIS)

    Bagolini, Alvise; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Savoia, Alessandro Stuart; Caliano, Giosuè; Lamberti, Nicola

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R and D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ∼100 nm min −1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm −1 , yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride. (paper)

  1. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    Science.gov (United States)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  2. Hafnium nitride buffer layers for growth of GaN on silicon

    Science.gov (United States)

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  3. Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide.

    Science.gov (United States)

    Fan, Meiyong; Yang, Huimin; Zheng, Pengfei; Hu, Guohua; Yun, Binfeng; Cui, Yiping

    2017-09-04

    A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be reduced 50% and as high as 30.6GHz modulation bandwidth can be achieved theoretically. The calculated extinction ratio and figure of merit are 0.1658dB/um and 9.7, respectively. And the required switching voltage from its minimum to maximum absorption state is 3.8180V and 780.50fJ/bit power consuming can be achieved. The proposed modulator can remedy the lack of high speed modulator on the passive silicon nitride waveguide.

  4. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  5. Preparation and mechanical properties of carbon nanotube-silicon nitride nano-ceramic matrix composites

    Science.gov (United States)

    Tian, C. Y.; Jiang, H.

    2018-01-01

    Carbon nanotube–silicon nitride nano-ceramic matrix composites were fabricated by hot-pressing nano-sized Si3N4 powders and carbon nanotubes. The effect of CNTs on the mechanical properties of silicon nitride was researched. The phase compositions and the microstructure characteristics of the samples as well as the distribution of carbon nanotube in the silicon nitride ceramic were analyzed by X-ray diffraction and scanning electron microscope. The results show that the microstructure of composites consists mainly of α-Si3N4, β-Si3N4, Si2N2O and carbon natubes. The addition of proper amount of carbon nanotubes can improve the fracture toughness and the flexural strength, and the optimal amount of carbon nanotube are both 3wt.%. However the Vickers hardness values decrease with the increase of carbon nanotubes content.

  6. Electrical and thermal conductivities of the graphene, boron nitride and silicon boron honeycomb monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Khodadadi, Jabbar [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Moradi Kurdestany, Jamshid [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65201 (United States); Yarmohammadi, Zahra [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2016-11-25

    Density of states, electrical and thermal conductivities of electrons in graphene, boron nitride and silicon boron single sheets are studied within the tight-binding Hamiltonian model and Green's function formalism, based on the linear response theory. The results show that while boron nitride keeps significantly the lowest amounts overall with an interval of zero value in low temperatures, due to its insulating nature, graphene exhibits the most electrical and thermal conductivities, slightly higher than silicon boron except for low temperature region where the latter surpasses, owing to its metallic character. This work might make ideas for creating new electronic devices based on honeycomb nanostructures. - Highlights: • Electronic properties of graphene, silicon boron, and boron nitride planes are compared. • Tight-binding Hamiltonian model and Green's function formalism are implemented. • This work might make ideas for creating new electronic devices based on honeycomb nanostructures.

  7. Transient and steady-state erosion of in-situ reinforced silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Karasek, K.R. [Allied Signal Research and Technology, Des Plaines, IL (United States); Whalen, P.J. [Allied Signal, Inc., Morristown, NJ (United States); Rateick, R.G. Jr. [Allied Signal Aerospace, South Bend, IN (United States); Hamilton, A.C. [Michigan Technological Univ., Houghton, MI (United States); Routbort, J.L. [Argonne National Lab., IL (United States)

    1994-10-01

    Relative to most other materials silicon nitride is very erosion resistant. However, the resulting surface flaws degrade strength - a serious concern for component designers. AlliedSignal Ceramic Components GS-44 in-situ reinforced silicon nitride was eroded in a slinger apparatus. Both transient (extremely low level) and steady-state erosion regimes were investigated. Alumina particles with effective average diameters of 140 Jim and 63 {mu}m were used at velocities of 50 m/s, 100 m/s, and 138 m/s. Biaxial tensile strength was measured. Strength decreased by about 15% after a very small erodent dosage and then remained virtually constant with further erosion. In-situ reinforcement produces R-curve behavior in which the fracture toughness increases with crack size. The effect of this is quite dramatic with strength loss being significantly less than expected for a normal silicon nitride with constant fracture toughness.

  8. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  9. Critical flaw size in silicon nitride ball bearings

    Science.gov (United States)

    Levesque, George Arthur

    Aircraft engine and bearing manufacturers have been aggressively pursuing advanced materials technology systems solutions to meet main shaft-bearing needs of advanced military aircraft engines. Ceramic silicon nitride hybrid bearings are being developed for such high performance applications. Though silicon nitride exhibits many favorable properties such as high compressive strength, high hardness, a third of the density of steel, low coefficient of thermal expansion, and high corrosion and temperature resistance, they also have low fracture toughness and are susceptible to failure from fatigue spalls emanating from pre-existing surface flaws that can grow under rolling contact fatigue (RCF). Rolling elements and raceways are among the most demanding components in aircraft engines due to a combination of high cyclic contact stresses, long expected component lifetimes, corrosive environment, and the high consequence of fatigue failure. The cost of these rolling elements increases exponentially with the decrease in allowable flaw size for service applications. Hence the range of 3D non-planar surface flaw geometries subject to RCF is simulated to determine the critical flaw size (CFS) or the largest allowable flaw that does not grow under service conditions. This dissertation is a numerical and experimental investigation of surface flaws in ceramic balls subjected to RCF and has resulted in the following analyses: Crack Shape Determination: the nucleation of surface flaws from ball impact that occurs during the manufacturing process is simulated. By examining the subsurface Hertzian stresses between contacting spheres, their applicability to predicting and characterizing crack size and shape is established. It is demonstrated that a wide range of cone and partial cone cracks, observed in practice, can be generated using the proposed approaches. RCF Simulation: the procedure and concerns in modeling nonplanar 3D cracks subject to RCF using FEA for stress intensity

  10. Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

    Science.gov (United States)

    Somiya, S.; Yoshimura, M.; Suzuki, T.; Nishimura, H.

    1980-01-01

    A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

  11. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    Energy Technology Data Exchange (ETDEWEB)

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  12. The Effects of Silicone Contamination on Bond Performance of Various Bond Systems

    Science.gov (United States)

    Anderson, G. L.; Stanley, S. D.; Young, G. L.; Brown, R. A.; Evans, K. B.; Wurth, L. A.

    2012-01-01

    The sensitivity to silicone contamination of a wide variety of adhesive bond systems is discussed. Generalizations regarding factors that make some bond systems more sensitive to contamination than others are inferred and discussed. The effect of silane adhesion promoting primer on the contamination sensitivity of two epoxy/steel bond systems is also discussed.

  13. Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

    Science.gov (United States)

    Sharma, Vivek; Tracy, Clarence; Schroder, Dieter; Herasimenka, Stanislau; Dauksher, William; Bowden, Stuart

    2014-02-01

    High quality surface passivation (Seff textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012 cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

  14. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  15. Review: Silicon-based oxynitride and nitride phosphors for white LEDs

    Directory of Open Access Journals (Sweden)

    Rong-Jun Xie and Naoto Hirosaki

    2007-01-01

    Full Text Available As a novel class of inorganic phosphors, oxynitride and nitride luminescent materials have received considerable attention because of their potential applications in solid-state lightings and displays. In this review we focus on recent developments in the preparation, crystal structure, luminescence and applications of silicon-based oxynitride and nitride phosphors for white light-emitting diodes (LEDs. The structures of silicon-based oxynitrides and nitrides (i.e., nitridosilicates, nitridoaluminosilicates, oxonitridosilicates, oxonitridoaluminosilicates, and sialons are generally built up of networks of crosslinking SiN4 tetrahedra. This is anticipated to significantly lower the excited state of the 5d electrons of doped rare-earth elements due to large crystal-field splitting and a strong nephelauxetic effect. This enables the silicon-based oxynitride and nitride phosphors to have a broad excitation band extending from the ultraviolet to visible-light range, and thus strongly absorb blue-to-green light. The structural versatility of oxynitride and nitride phosphors makes it possible to attain all the emission colors of blue, green, yellow, and red; thus, they are suitable for use in white LEDs. This novel class of phosphors has demonstrated its superior suitability for use in white LEDs and can be used in bichromatic or multichromatic LEDs with excellent properties of high luminous efficacy, high chromatic stability, a wide range of white light with adjustable correlated color temperatures (CCTs, and brilliant color-rendering properties.

  16. TOPICAL REVIEW Textured silicon nitride: processing and anisotropic properties

    Directory of Open Access Journals (Sweden)

    Xinwen Zhu and Yoshio Sakka

    2008-01-01

    Full Text Available Textured silicon nitride (Si3N4 has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW and templated grain growth (TGG. The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3 N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured

  17. Bio-functionalization of silicon nitride-based piezo-resistive ...

    Indian Academy of Sciences (India)

    The polysilicon piezo-resistor was encapsulated using a top silicon nitride layer; further a chrome-gold layer was deposited to make electrical contact with the polysilicon layer. Process sequence was designed to ensure that the metal layers in the pad region made an electrical contact with the piezo-resistive layer. The top.

  18. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  19. Damage progression in silicon nitride undergoing non-conforming hybrid cyclic contact

    Czech Academy of Sciences Publication Activity Database

    Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

    2017-01-01

    Roč. 105, DEC (2017), s. 97-110 ISSN 0142-1123 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Cyclic contact fatigue * Surface and subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics OBOR OECD: Audio engineering, reliability analysis Impact factor: 2.899, year: 2016

  20. Near-field optical microscope using a silicon-nitride probe

    NARCIS (Netherlands)

    van Hulst, N.F.; Moers, M.H.P.; Moers, M.H.P.; Noordman, O.F.J.; Noordman, O.F.J.; Tack, R.G.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.

    1993-01-01

    Operation of an alternative near-field optical microscope is presented. The microscope uses a microfabricated silicon- nitride probe with integrated cantilever, as originally developed for force microscopy. The cantilever allows routine close contact near-field imaging o­n arbitrary surfaces without

  1. Size-dependent effective Young’s modulus of silicon nitride cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.; Westra, H.J.R.; Van der Drift, E.W.J.M.; Venstra, W.J.; Van der Zant, H.S.J.

    2009-01-01

    The effective Young’s modulus of silicon nitride cantilevers is determined for thicknesses in the range of 20–684 nm by measuring resonance frequencies from thermal noise spectra. A significant deviation from the bulk value is observed for cantilevers thinner than 150 nm. To explain the observations

  2. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Hnatowicz, Vladimír; Macková, Anna; Malinský, Petr; Slepička, P.

    2015-01-01

    Roč. 354, JUL (2015), s. 205-209 ISSN 0168-583X R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2011019 Institutional support: RVO:61389005 Keywords : stopping power * heavy ions * polypropylene * silicon nitride Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.389, year: 2015

  3. Silicon nitride membrane resonators at millikelvin temperatures with quality factors exceeding 10^8

    NARCIS (Netherlands)

    Yuan, M.; Cohen, M.A.; Steele, G.A.

    2015-01-01

    We study the mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor (Q) metalized silicon nitride membranes at temperatures down to 14?mK using a three-dimensional optomechanical cavity. Below 200?mK, high-Q modes of the membranes show a diverging increase of Q with

  4. Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures

    NARCIS (Netherlands)

    Hoevers, H.F.C.; Ridder, M.L.; Germeau, A.; Bruijn, M.P.; de Korte, P.A.J.; Wiegerink, Remco J.

    2005-01-01

    We studied the phonon transport in free-standing 1 µm thick silicon-nitride membranes at temperatures around 100 mK. By varying the geometry of the membranes and the dimensions of the heater element, we are able to distinguish between radiative and diffuse phonon transport. The data indicate that

  5. Microstructure, fracture and damage mechanisms in rare-earth doped silicon nitride ceramics

    Czech Academy of Sciences Publication Activity Database

    Tatarko, P.; Chlup, Zdeněk; Dusza, J.

    2011-01-01

    Roč. 465, - (2011), s. 93-96 ISSN 1013-9826. [MSMF-6: Materials Structure and Micromechanics of Fracture VI. Brno, 28.06.2010-30.06.2010] Institutional research plan: CEZ:AV0Z20410507 Keywords : rare-earth element * silicon nitride * composite * fracture * mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics

  6. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  7. Flux stabilization of silicon nitride microsieves by backpulsing and surface modification with PEG moieties

    NARCIS (Netherlands)

    Girones nogue, Miriam; Bolhuis-Versteeg, Lydia A.M.; Lammertink, Rob G.H.; Wessling, Matthias

    2006-01-01

    The influence of the surface properties of chemically modified silicon nitride microsieves on the filtration of protein solutions and defatted milk is described in this research. Prior to membrane filtrations, an antifouling polymer based on poly(ethylene glycol), poly(TMSMA-r-PEGMA) was synthesized

  8. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    Energy Technology Data Exchange (ETDEWEB)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  9. Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon-Oxide-Nitride-Oxide-Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology

    Science.gov (United States)

    Chen, Henry J. H.; Huang, Chien-Jen

    2013-02-01

    This work addresses the characteristics of a nonvolatile polycrystalline-silicon thin-film-transistor silicon-oxide-nitride-oxide-silicon (SONOS) memory with periodical finlike channels fabricated using nanoimprint lithography. The polycrystalline silicon periodical finlike channels were fabricated using ultraviolet (UV) nano-imprint lithography and studied by transmission electron microscopy (TEM). The memories with periodical finlike channels have lower operation voltage, higher programming speed, larger memory window, and better endurance and data retention than those with a single channel. The proposed approach can be utilized to fabricate a high-performance thin-film-transistor memory at a low cost.

  10. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    International Nuclear Information System (INIS)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

    2011-01-01

    Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  11. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Science.gov (United States)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y2O3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si3N4 specimens, the firing was performed in electric tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  12. Joining silicon nitride to FA-129 iron aluminide

    Science.gov (United States)

    Brochu, Mathieu

    inserted to absorb residual stresses. The maximum joint strength reached was 160 MPa. (VIII) Partial Transient Liquid Phase Bonding was successfully applied to the Si3N4/FA-129 system using a nickel interlayer. The conventional silicide and nitride layers were not observed as the silicide layer dissolved into the nickel core at high temperature. The strength of the assembly was measured and a strength of 80 MPa was obtained, independent of the joining parameters. (Abstract shortened by UMI.)

  13. Bond strength between acrylic resin and maxillofacial silicone

    Directory of Open Access Journals (Sweden)

    Marcela Filié Haddad

    2012-12-01

    Full Text Available The development of implant dentistry improved the possibilities of rehabilitation with maxillofacial prosthesis. However, clinically it is difficult to bond the silicone to the attachment system. OBJECTIVES: This study aimed to evaluate the effect of an adhesive system on the bond strength between acrylic resin and facial silicone. MATERIAL AND METHODS: A total of 120 samples were fabricated with auto-polymerized acrylic resin and MDX 4-4210 facial silicone. Both materials were bonded through mechanical retentions and/or application of primers (DC 1205 primer and Sofreliner primer S and adhesive (Silastic Medical Adhesive Type A or not (control group. Samples were divided into 12 groups according to the method used to attach the silicone to the acrylic resin. All samples were subjected to a T-peel test in a universal testing machine. Failures were classified as adhesive, cohesive or mixed. The data were evaluated by the analysis of variance (ANOVA and the Tukey's HSD test (α=.05. RESULTS: The highest bond strength values (5.95 N/mm; 3.07 N/mm; 4.75 N/mm were recorded for the samples that received a Sofreliner primer application. These values were significantly higher when the samples had no scratches and did not receive the application of Silastic Medical Adhesive Type A. CONCLUSIONS: The most common type of failure was adhesive. The use of Sofreliner primer increased the bond strength between the auto-polymerized acrylic resin and the Silastic MDX 4-4210 facial silicone.

  14. Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

    Directory of Open Access Journals (Sweden)

    Normand Elise

    2011-01-01

    Full Text Available Abstract Silicon nanoclusters (Si-ncs embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.

  15. Effects of heat treatments on surface roughness of silicon nitride ceramics

    International Nuclear Information System (INIS)

    Nakano, T.; Kinemuchi, Y.; Ishizaki, K.

    1999-01-01

    Silicon nitride ceramics were sintered by Pulsed Electric Current Sintering (PECS) method. Sintered Si 3 N 4 bodies were coated by copper, and heat treated at 1200 deg C for 1 hour in air. After the Cu coating and heat treatment, the ground Si 3 N 4 surface was oxidized, its duration was calculated from intensities obtained by an Electron Probe Micro Analyzer. The oxidized surfaces became smoother by heat treatment as the Cu coating period increases. The oxidation for smoothening treatments of silicon nitride ceramics requires the eutectic mixture of copper oxide and silicon oxide formed by the heat treatment on the ground surface covered by Cu before the treatment. Less nitrogen atoms on the Si 3 N 4 surface is necessary in order to smoothen the Si 3 N 4 surface. Copyright (1999) AD-TECH - International Foundation for the Advancement of Technology Ltd

  16. Effect of microstructure on the high temperature strength of nitride ...

    Indian Academy of Sciences (India)

    Unknown

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J RAKSHIT and P K DAS*. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. MS received 15 March 2002; revised 3 August 2002. Abstract. Four compositions of nitride bonded SiC were fabricated with ...

  17. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma

    International Nuclear Information System (INIS)

    Franz, D.

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 o C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10 12 -10 1' 3 cm -3 . For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind of plasma. Diborane

  18. Study of the main parameters involved in carbothermal reduction reaction of silica aiming to obtain silicon nitride powder

    International Nuclear Information System (INIS)

    Rocha, J.C. da; Greca, M.C.

    1989-01-01

    The influence of main parameters involved in the method of silicon nitride attainment by carbothermal reduction of silica followed by nitridation were studied in isothermal experiments of fine powder mixtures of silica and graphite in a nitrogen gas flow. The time, temperature, rate C/SiO 2 and flow of nitrogen were varied since they are the main parameters involved in this kind of reaction. The products of reaction were analysed by X-ray diffraction to identify the crystalline phases and as a result was obtained the nucleation of silicon nitride phase. Meanwhile, corroborating prior results, we verified to be difficult the progress of the reaction and the inhibition of formation of silicon carbide phase, the last one being associated to the formation of silicon nitride phase due to thermodynamic matters [pt

  19. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides

    NARCIS (Netherlands)

    Ay, F.; Aydinli, A.

    Silicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative

  20. Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

    Science.gov (United States)

    Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

    2015-10-05

    In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

  1. Laser-assisted turning of components made of silicon-nitride ceramics

    International Nuclear Information System (INIS)

    Klocke, F.; Bausch, S.

    2001-01-01

    The manufacture of high-precision parts made of silicon-nitride ceramic, such as roller bearing rings or valves, currently involves finishing in the form of time and cost intensive grinding operations. This has resulted in demands for the development of more efficient machining techniques and for the subsequent provision of these within a manufacturing environment. A prototype of a precision lathe with an integrated high power diode laser for laser-assisted turning has been developed at the Fraunhofer IPT in close co-operation with industrial partners. When the workpiece is heated continuously by the laser, the resultant localized material softening enables the ceramic to be machined using a defined cutting edge. The application of this technique allows complex silicon nitride ceramic parts with surface qualities of up to R a = 0.3 μm to be produced considerably more flexibly than before, with no requirement for cooling lubricant. (author)

  2. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  3. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

    Science.gov (United States)

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-10-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

  4. Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

    Science.gov (United States)

    Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

    2018-04-01

    In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

  5. Application of Silicon Nitride (Si3N4 Ceramics in Ball Bearing

    Directory of Open Access Journals (Sweden)

    Wijianto Wijianto

    2016-08-01

    operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear rate, reducing noise level and reduce of using lubricant. The sintering methods are used to produce ball bearing from silicon nitride. Some techniques can be applied to increase ceramics strength which are reduce porosity, reduce grain size, reduce surface flaw and proof stressing. The surface finishing of the ceramic bearing is very important because silicon nitride as a brittle material, its strength is limited to the flaw sizes especially the flaw at the surface.

  6. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  7. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

    Directory of Open Access Journals (Sweden)

    Buiculescu Raluca

    2011-01-01

    Full Text Available Abstract The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

  8. Surface toughness of silicon nitride bioceramics: I, Raman spectroscopy-assisted micromechanics.

    Science.gov (United States)

    Pezzotti, Giuseppe; Enomoto, Yuto; Zhu, Wenliang; Boffelli, Marco; Marin, Elia; McEntire, Bryan J

    2016-02-01

    Indentation micro-fracture is revisited as a tool for evaluating the surface toughness of silicon nitride (Si3N4) bioceramics for artificial joint applications. Despite being unique and practical from an experimental perspective, a quantitative assessment of surface fracture toughness using this method is challenging. An improved method has been developed, consisting of coupling indentation with confocal (spatially resolved) Raman piezo-spectroscopy. Empowered by the Raman microprobe, the indentation micro-fracture method was found to be capable of providing reliable surface toughness measurements in silicon nitride biomaterials. In designing the microstructures of bioceramic bearing couples for improved tribological performance, surface toughness must be considered as a fundamentally different and distinct parameter from bulk toughness. The coupling of indention crack opening displacements (COD) with local stress field assessments by spectroscopy paves the way to reliably compare the structural properties of bioceramics and to quantitatively monitor their evolution during environmental exposure. Copyright © 2015 Elsevier Ltd. All rights reserved.

  9. Microencapsulation of silicon nitride particles with yttria and yttria-alumina precursors

    International Nuclear Information System (INIS)

    Garg, A.K.; De Jonghe, L.C.

    1990-01-01

    Procedures are described to deposit uniform layers of yttria and yttria-alumina precursors on fine powders and whiskers of silicon nitride. The coatings were produced by aging at elevated temperatures aqueous systems containing the silicon nitride core particles, yttrium and aluminum nitrates, and urea. Optimum concentrations of the core particles, in relation to the reactants, were established to promote surface deposition of the oxide precursors. Polymeric dispersants were used effectively to prevent agglomeration of the solids during the microencapsulation process. The morphology of the powders was characterized using scanning and transmission electron microscopy. The mechanisms for the formation of the coated layers are discussed. A description is provided that allows qualitative assessment of the experimental factors that determine microencapsulation by a slurry method

  10. Buckling Morphologies and Interfacial Properties of Silicon Nitride Films Deposited on Float Glass Substrates

    Science.gov (United States)

    Sun, Ya-Dong; Chen, Qi-Xiang; Feng, Yu-Fei; Chen, Jun; Yu, Sen-Jiang

    2015-04-01

    We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

  11. Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

    Science.gov (United States)

    Huebner, K. H.; Saure, F.

    1983-01-01

    The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

  12. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  13. Mechanical behaviour and failure phenomenon of an in situ toughened silicon nitride

    Science.gov (United States)

    Salem, J. A.; Choi, S. R.; Freedman, M. R.; Jenkins, M. G.

    1992-01-01

    The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

  14. Strength evaluation test of pressureless-sintered silicon nitride at room temperature

    Science.gov (United States)

    Matsusue, K.; Takahara, K.; Hashimoto, R.

    1984-01-01

    In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

  15. Analysis of the effective thermoelastic properties and stress fields in silicon nitride based on EBSD data

    Czech Academy of Sciences Publication Activity Database

    Othmani, Y.; Böhlke, T.; Lube, T.; Fellmeth, A.; Chlup, Zdeněk; Colonna, F.; Hashibon, A.

    2016-01-01

    Roč. 36, č. 5 (2016), s. 1109-1125 ISSN 0955-2219 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 EU Projects: European Commission(XE) 263476 Institutional support: RVO:68081723 Keywords : Silicon nitride * EBSD data * Hashin-Shtrikman bounds * Finite element analysis Subject RIV: JH - Ceramic s, Fire-Resistant Materials and Glass Impact factor: 3.411, year: 2016

  16. Robust Environmental Barrier Coatings for Silicon Nitride, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon based ceramics are the leading candidates for the high temperature structural components of the advanced propulsion engines. For such applications, one key...

  17. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Directory of Open Access Journals (Sweden)

    S. Reboh

    2013-10-01

    Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  18. Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, David, E-mail: caballero@unistra.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Martinez, Elena [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Bausells, Joan [Centre Nacional de Microelectronica (CNM-IMB), CSIC, Campus UAB, 08193 Bellaterra (Spain); Errachid, Abdelhamid, E-mail: abdelhamid.errachid-el-salhi@univ-lyon1.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Universite Claude Bernard - Lyon 1, LSA - UMR 5180, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex (France); Samitier, Josep [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain)

    2012-03-30

    Highlights: Black-Right-Pointing-Pointer An impedimetric label-free immunosensor was developed for the specific detection of human serum albumin proteins. Black-Right-Pointing-Pointer Anti-HSA antibodies were covalently immobilized on silicon nitride surfaces using a direct functionalization methodology. Black-Right-Pointing-Pointer Silicon nitride offers multiple advantages compared to other common materials. Black-Right-Pointing-Pointer The proposed sensor has high sensitivity and good selectivity for the detection of HSA proteins. - Abstract: In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si{sub 3}N{sub 4}) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si{sub 3}N{sub 4}-based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO{sub 2}/Si{sub 3}N{sub 4} structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10{sup -13}-10{sup -7} M were detected, showing a sensitivity of 0.128 {Omega} {mu}M{sup -1} and a limit of detection of 10{sup -14} M. The specificity of the sensor was also addressed by studying the

  19. Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

    International Nuclear Information System (INIS)

    Caballero, David; Martinez, Elena; Bausells, Joan; Errachid, Abdelhamid; Samitier, Josep

    2012-01-01

    Highlights: ► An impedimetric label-free immunosensor was developed for the specific detection of human serum albumin proteins. ► Anti-HSA antibodies were covalently immobilized on silicon nitride surfaces using a direct functionalization methodology. ► Silicon nitride offers multiple advantages compared to other common materials. ► The proposed sensor has high sensitivity and good selectivity for the detection of HSA proteins. - Abstract: In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si 3 N 4 ) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si 3 N 4 -based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO 2 /Si 3 N 4 structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10 −13 –10 −7 M were detected, showing a sensitivity of 0.128 Ω μM −1 and a limit of detection of 10 −14 M. The specificity of the sensor was also addressed by studying the interferences with a similar protein, bovine serum albumin. The results obtained show that the antibodies were efficiently immobilized and the proteins

  20. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  1. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  2. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Energy Technology Data Exchange (ETDEWEB)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T [Research Unit of Advanced Ceramic, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok (Thailand); Padipatvuthikul, P, E-mail: raayaa_chula@hotmail.com [Faculty of Dentistry, Srinakharinwirot University, Bangkok (Thailand)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si{sub 3}N{sub 4} ceramic as a dental core material. The white Si{sub 3}N{sub 4} was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si{sub 3}N{sub 4} ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si{sub 3}N{sub 4} specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y{sub 2}O{sub 3} - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si{sub 3}N{sub 4} specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10{sup -6} deg. C{sup -1}, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  3. Fabrication of silicon nitride nanoceramics—Powder preparation and sintering: A review

    Directory of Open Access Journals (Sweden)

    Toshiyuki Nishimura et al

    2007-01-01

    Full Text Available Fine-grained silicon nitride ceramics were investigated mainly for their high-strain-rate plasticity. The preparation and densification of fine silicon nitride powder were reviewed. Commercial sub-micrometer powder was used as raw powder in the "as-received" state and then used after being ground and undergoing classification operation. Chemical vapor deposition and plasma processes were used for fabricating nanopowder because a further reduction in grain size caused by grinding had limitations. More recently, nanopowder has also been obtained by high-energy milling. This process in principle is the same as conventional planetary milling. For densification, primarily hot pressing was performed, although a similar process known as spark plasma sintering (SPS has also recently been used. One of the advantages of SPS is its high heating rate. The high heating rate is advantageous because it reduces sintering time, achieving densification without grain growth. We prepared silicon nitride nanopowder by high-energy milling and then obtained nanoceramics by densifying the nanopowder by SPS.

  4. Bonding Properties of Aluminum Nitride at High Pressure.

    Science.gov (United States)

    Liu, Zhao; Li, Da; Wei, Shuli; Wang, Wenjie; Tian, Fubo; Bao, Kuo; Duan, Defang; Yu, Hongyu; Liu, Bingbing; Cui, Tian

    2017-07-03

    Exploring the bonding properties and polymerization mechanism of stable polymeric nitrogen phases is the main goal of our high-pressure study. The pressure versus composition phase diagram of the Al-N system is established. In addition to the known Fm3̅m phase of AlN, a notable monoclinic phase with N 6 6- anion polymeric nitrogen chains for AlN 3 in the pressure range from 43 to 85 GPa is predicted. Its energy density is up to 2.75 kJ·g -1 , and the weight ratio of nitrogen is nearly 61%, which make it potentially interesting for the industrial applications as a high energy density material. The high-pressure studies of atomic and electronic structures in this predicted phase reveal that the formation of N 6 6- anion is driven by the sp 2 hybridization of nitrogen atoms. The resonance effect between alternating π-bonds and σ-bonds in polymeric nitrogen chains are all responsible for the structural stability. Because of the electrons transfer from aluminums to polymeric nitrogen chains, there is a pseudogap in the electronic structures of AlN 3 . The N_p electrons form π-type chemical bonds with the neighboring atoms, resulting in the delocalization of π electrons and charge transfer in polymeric nitrogen chains. Furthermore, disparities of charge density distribution between nitrogen atoms in polymeric nitrogen chains are the principal reason for the metallicity.

  5. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

    2016-02-15

    The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

  6. Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

    Science.gov (United States)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

  7. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    We have demonstrated a simple, scalable and inexpensive method based on microwave plasma for synthesizing 5 to 10 g/h of nanomaterials. Luminescent nano silicon ..... abad for permitting to conduct experimental work in his organization and Prof. Krupashankara, Department of. Mechanical Engineering, RV College of ...

  8. sp3-Bonded silicon allotropes based on the Kelvin problem.

    Science.gov (United States)

    Zhao, Hui-Yan; Wang, Jing; Ma, Qing-Min; Liu, Ying

    2013-10-28

    The Kelvin problem, how to partition three-dimensional space into cells of equal volume with minimal area, is a fascinating one. Aggregations of bubbles are naturally physical illustrations of the Kelvin problem. And the superconductor Na8Si46 as an inspiration leads to an amazing discovery of the Weaire-Phelan (WP) structure of foam - the optimal solution to the Kelvin problem to date. Here based on the structural similarity between sp(3)-bonded silicon allotropes and the solutions to the Kelvin problem, a series of new sp(3)-hybridization silicon allotropes, named "Kelvin Silicons", are presented. Furthermore, the structural stability and electronic properties of these new silicon allotropes are investigated using density-functional theory (DFT) calculations. The results show that Kelvin Silicons are structurally stable semiconductors with indirect bandgaps in the range of 0.17-1.40 eV, and their bulk moduli are about 75.9-88.5% that of the diamond phase. The simulated X-ray diffraction spectra of the new silicon crystalline structures would provide more information for possible experimental observations and synthesis.

  9. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    International Nuclear Information System (INIS)

    Volpi, F.; Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

    2014-01-01

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm 3 , respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly

  10. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  11. Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Kiser, Lames D.

    1990-01-01

    The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

  12. Interaction between dangling bonds in vacancy-defects in silicon

    International Nuclear Information System (INIS)

    Caldas, M.J.; Fazzio, A.

    1983-01-01

    The 'defect-molecule' model in the simplest scheme (without configuration interaction) is reviewed and the concept of 'delocalized dangling-bonds' is explorated in the study of the interaction between the unsaturated hybrids of the mono and divacancy in silicon. The 'defect-molecule' hamiltonian is written in parametric form, and the parameters are extracted from full self-consistent calculations for both systems carried out through the MS-Xα molecular cluster model. (Author) [pt

  13. High-pressure deuterium annealing for improving the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices

    Science.gov (United States)

    Choi, Sangmoo; Jang, Man; Park, Hokyung; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2004-12-01

    We report the effects of high-pressure deuterium postmetallization annealing on the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices. Compared with the control samples annealed in a conventional forming gas ambient (H2/N2=4%/96%), the samples annealed in a high-pressure (10 atm) pure deuterium ambient show improved endurance and retention characteristics without the degradation of program/erase (P/E) speed. In addition, the high-pressure deuterium-annealed samples show a significantly reduced charge loss rate for the electron-stored state and the hole-stored state, before and after the P/E cycles. The improved reliability of the high-pressure deuterium-annealed samples can be explained by the significantly decreased interface trap density and the large kinetic isotope effect of deuterium, which reduces the generation of the interface trap density under the stress of the P/E cycles.

  14. Low-temperature glass bonding for sensor application using boron oxide thin films

    NARCIS (Netherlands)

    Legtenberg, Rob; Legtenberg, R.; Bouwstra, S.; Bouwstra, Siebe; Elwenspoek, Michael Curt

    Low-temperature glass bonding of silicon, silicon dioxide and silicon nitride is described. Boron oxide was used as the intermediate glass layer at a bonding temperature of 450°C. First experiments indicate that due to reflow and deformation of the molten glass layer, bonding over metal patterns is

  15. Pulsed laser heating of silicon-nitride capped GaAs: Optical properties at high temperature

    Science.gov (United States)

    Bhat, A.; Yao, H. D.; Compaan, A.; Horak, A.; Rys, A.

    1988-09-01

    The optical properties of silicon nitride and gallium arsenide were studied at temperatures up to and beyond the melting point of GaAs by means of laser heating. XeCl excimer and pulsed dye laser pulses, ˜10 ns in duration, were used to heat the semiconductor under nitride capping layers of varying thickness. The transient reflectivity response at 514.5 nm was used together with a multilayer interference analysis to obtain the optical constants of solid and molten GaAs and of solid Si3N4 near the 1513-K melting point of GaAs. In addition, we report the melt duration as a function of laser pulse energy for GaAs with and without capping layers.

  16. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  17. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cross, M.T.

    1990-01-01

    Aluminum nitride -- silicon carbide whisker composites with up to 20 vol % whiskers were fabricated by pressureless sintering (1750{degree}--1800{degree}C) and by hot-pressing (1700{degree}--1800{degree}C). Silicon carbide whiskers were found to degrade depending on the type of protective powder bed used during sintering. Whiskers were found to degraded in high oxygen containing samples by reaction with sintering additives. Whisker degradation was also due to the formation of silicon carbide -- aluminum nitride solid solution. No whisker degradation was observed in hot-pressed samples. For these samples Young's modulus and fracture toughness were measured. A 33% increase in the fracture toughness was measured by the indentation technique for a 20 vol % whisker composite. Operative toughening mechanisms were investigated using scanning electron microscopy. Crack deflection and whisker bridging were the dominant mechanisms. It was also shown that load transfer from matrix to whiskers can be a contributing factor to toughening. 88 refs., 34 figs., 11 tabs.

  18. Effects of oxidation and hot corrosion on the erosion of silicon nitride

    International Nuclear Information System (INIS)

    Kim, Jong Jip

    2005-01-01

    The effect of oxidation and hot corrosion on the solid particle erosion was investigated for hot-pressed silicon nitride using as- polished, pre-oxidized and pre-corroded specimens by molten sodium sulfates. Erosion tests were performed at 22, 500 and 900 .deg. C using angular silicon carbide particles of mean diameter 100 μm. Experimental results show that solid particle erosion rate of silicon nitride increases with increasing temperature for as-polished or pre-oxidized specimens in consistent with the prediction of a theoretical model. Erosion rate of pre-oxidized specimens is lower than that of as-polished specimens at 22 .deg. C, but it is higher at 900 .deg. C. Lower erosion rate at 22 .deg. C in the pre-oxidized specimens is attributed due to the blunting of surface flaws, and the higher erosion rate at 900 .deg. C is due to brittle lateral cracking. Erosion rate of pre-corroded specimens decreases with increasing temperature. Less erosion at 900 .deg. C than at 22 .deg. C is associated with the liquid corrosion products sealing off pores at 900 .deg. C and the absence of inter-granular crack propagation observed at 22 .deg. C

  19. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  20. Silicon nitride membrane resonators at millikelvin temperatures with quality factors exceeding 108

    Science.gov (United States)

    Yuan, Mingyun; Cohen, Martijn A.; Steele, Gary A.

    2015-12-01

    We study the mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor (Q) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-Q modes of the membranes show a diverging increase of Q with decreasing temperature, reaching Q =1.27 ×108 at 14 mK, an order of magnitude higher than that reported before. The ultra-low dissipation makes the membranes highly attractive for the study of optomechanics in the quantum regime, as well as for other applications of optomechanics such as microwave to optical photon conversion.

  1. On the temperature dependence of the photoconductivity of amorphous silicon nitride (a-Si Nx: H)

    International Nuclear Information System (INIS)

    Tessler, L.R.; Alvarez, F.; Chambouleyron, I.

    1984-01-01

    Experimental results on the photoconducticity of amorphous hydrogenated silicon nitride a-SiNx: H prepared from plasma decomposition of a gaseus mixture of silane and nitrogen ([Si H 4 ]/[N 2 ] ∼ 0.33) are presented. The material is deposited in a capacitively coupled glow discharge system and nitrogen content was continuously increased by increasing the RF power dissipated in the plasma. Studies of the photocurrent as a function of temperature as a function of temperature and lig ht intensities are reported. (Author) [pt

  2. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  3. Design of polarization-insensitive 2 × 2 multimode interference coupler based on double strip silicon nitride waveguides

    Science.gov (United States)

    Yang, Huimin; Zheng, Pengfei; Liu, Panpan; Hu, Guohua; Yun, Binfeng; Cui, Yiping

    2018-03-01

    A polarization-insensitive 2 × 2 multimode interference coupler based on double strip silicon nitride waveguides is proposed and optimized by using the three-dimensional finite difference time domain method. By optimizing the device's structure parameters in detail, polarization independent excess loss of -0.32dB is obtained, and negligible output uniformities of -0.02dB and -0.03dB could be achieved for the TE and TM mode, respectively. The optimized polarization-insensitive 2 × 2 multimode interference coupler could be served as a building block on the double strip silicon nitride waveguides platform.

  4. Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Lin Men-Ku

    2009-01-01

    Full Text Available Abstract We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP ion etching. Silicon nitride SWS surfaces with diameter of 160–200 nm and a height of 140–150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR coatings and SWS and a 0.8% improvement in efficiency has been seen.

  5. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  6. Dissolution behaviour of silicon nitride coatings for joint replacements

    Energy Technology Data Exchange (ETDEWEB)

    Pettersson, Maria [Materials in Medicine Group, Div. of Applied Materials Science, Dept. of Engineering Sciences, Uppsala University, Uppsala (Sweden); Bryant, Michael [Institute of Functional Surfaces (iFS), School of Mechanical Engineering, University of Leeds, Leeds (United Kingdom); Schmidt, Susann [Thin Film Physics, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping (Sweden); Engqvist, Håkan [Materials in Medicine Group, Div. of Applied Materials Science, Dept. of Engineering Sciences, Uppsala University, Uppsala (Sweden); Hall, Richard M. [Institute of Medical and Biological Engineering (iMBE), School of Mechanical Engineering, University of Leeds, Leeds (United Kingdom); Neville, Anne [Institute of Functional Surfaces (iFS), School of Mechanical Engineering, University of Leeds, Leeds (United Kingdom); Persson, Cecilia, E-mail: cecilia.persson@angstrom.uu.se [Materials in Medicine Group, Div. of Applied Materials Science, Dept. of Engineering Sciences, Uppsala University, Uppsala (Sweden)

    2016-05-01

    In this study, the dissolution rate of SiN{sub x} coatings was investigated as a function of coating composition, in comparison to a cobalt chromium molybdenum alloy (CoCrMo) reference. SiN{sub x} coatings with N/Si ratios of 0.3, 0.8 and 1.1 were investigated. Electrochemical measurements were complemented with solution (inductively coupled plasma techniques) and surface analysis (vertical scanning interferometry and x-ray photoelectron spectroscopy). The dissolution rate of the SiN{sub x} coatings was evaluated to 0.2–1.4 nm/day, with a trend of lower dissolution rate with higher N/Si atomic ratio in the coating. The dissolution rates of the coatings were similar to or lower than that of CoCrMo (0.7–1.2 nm/day). The highest nitrogen containing coating showed mainly Si–N bonds in the bulk as well as at the surface and in the dissolution area. The lower nitrogen containing coatings showed Si–N and/or Si–Si bonds in the bulk and an increased formation of Si–O bonds at the surface as well as in the dissolution area. The SiN{sub x} coatings reduced the metal ion release from the substrate. The possibility to tune the dissolution rate and the ability to prevent release of metal ions encourage further studies on SiN{sub x} coatings for joint replacements. - Graphical abstract: Dissolution rates of SiN{sub 0.3}, SiN{sub 0.8}, and SiN{sub 1.1} coatings on CoCrMo compared to uncoated CoCrMo. Dissolution rates were obtained from i) electrochemical measurements of I{sub corr}, ii) the step height between covered and solution-exposed surfaces, measured using VSI, and iii) the ion concentration in the solution, measured with ICP. - Highlights: • The dissolution of SiN{sub x} coatings was investigated in comparison to (bulk) CoCrMo. • The coatings gave a lower or similar dissolution rate to CoCrMo, of 0.2–1.2 nm/day. • An increased nitrogen content in the coatings gave lower dissolution rates. • SiN{sub x} coatings on CoCrMo reduced the metal ion release

  7. Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

    2015-03-09

    We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

  8. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  9. Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2 or Si3N4 buffer layer

    Science.gov (United States)

    Lee, Sang-Youl; Oh, Jae-Sub; Yang, Seung-Dong; Yun, Ho-Jin; Jeong, Kwang-Seok; Kim, Yu-Mi; Lee, Hi-Deok; Lee, Ga-Won

    2013-10-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage ( V T ), subthreshold slope ( SS) and transconductance ( g m ), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and g m , program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.

  10. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  11. Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

    Science.gov (United States)

    Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

    2005-01-01

    Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

  12. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    Science.gov (United States)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  13. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu, E-mail: lfchen@xmu.edu.cn

    2016-09-30

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiC{sub f}/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  14. Simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by slurry-sampling graphite furnace AAS.

    Science.gov (United States)

    Minami, Hirotsugu; Yada, Masako; Yoshida, Tomomi; Zhang, Qiangbin; Inoue, Sadanobu; Atsuya, Ikuo

    2004-03-01

    A fast and accurate analytical method was established for the simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by graphite furnace atomic absorption spectrometry using a slurry sampling technique and a Hitachi Model Z-9000 atomic absorption spectrometer. The slurry samples were prepared by the ultrasonication of silicon carbide or silicon nitride powders with 0.1 M nitric acid. Calibration curves were prepared by using a mixed standard solution containing aluminum, calcium, iron and 0.1 M nitric acid. The analytical results of the proposed method for aluminum, calcium and iron in silicon carbide and silicon nitride reference materials were in good agreement with the reference values. The detection limits for aluminum, calcium and iron were 0.6 microg/g, 0.15 microg/g and 2.5 microg/g, respectively, in solid samples, when 200 mg of powdered samples were suspended in 20 ml of 0.1 M nitric acid and a 10 microl portion of the slurry sample was then measured. The relative standard deviation of the determination of aluminum, calcium and iron was 5 - 33%.

  15. Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

    Directory of Open Access Journals (Sweden)

    Johan Jaime Medina Benavente

    Full Text Available Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. The coated surface was first examined in terms of wettability and topography using contact angle measurements and atomic force microscopy and then, conditioned silicon nitride surface was used as the substrate for the study of PC12 cell culture properties. We found that coating silicon nitride with poly-L-lysine increased surface hydrophilicity and that exposing this coated surface to an extracellular aqueous environment gradually decreased its roughness. When PC12 cells were cultured on a coated silicon nitride surface, adhesion and spreading were facilitated, and the cells showed enhanced morphological differentiation compared to those cultured on a plastic culture dish. A bromodeoxyuridine assay demonstrated that, on the coated silicon nitride surface, higher proportions of cells left the cell cycle, remained in a quiescent state and had longer survival times. Therefore, our study of the interaction of the silicon nitride surface with PC12 cells provides important information for the production of devices that need to have optimal cell culture-supporting properties in order to be used in the study of neuronal functions.

  16. Evaluation of Silicon Nitride as a Substrate for Culture of PC12 Cells: An Interfacial Model for Functional Studies in Neurons

    Science.gov (United States)

    Medina Benavente, Johan Jaime; Mogami, Hideo; Sakurai, Takashi; Sawada, Kazuaki

    2014-01-01

    Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. The coated surface was first examined in terms of wettability and topography using contact angle measurements and atomic force microscopy and then, conditioned silicon nitride surface was used as the substrate for the study of PC12 cell culture properties. We found that coating silicon nitride with poly-L-lysine increased surface hydrophilicity and that exposing this coated surface to an extracellular aqueous environment gradually decreased its roughness. When PC12 cells were cultured on a coated silicon nitride surface, adhesion and spreading were facilitated, and the cells showed enhanced morphological differentiation compared to those cultured on a plastic culture dish. A bromodeoxyuridine assay demonstrated that, on the coated silicon nitride surface, higher proportions of cells left the cell cycle, remained in a quiescent state and had longer survival times. Therefore, our study of the interaction of the silicon nitride surface with PC12 cells provides important information for the production of devices that need to have optimal cell culture-supporting properties in order to be used in the study of neuronal functions. PMID:24587271

  17. Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne-Azide Cycloaddition Reactions

    NARCIS (Netherlands)

    Manova, R.K.; Pujari, S.P.; Weijers, C.A.G.M.; Zuilhof, H.; Beek, van T.A.

    2012-01-01

    Cu-free "click" chemistry is explored on silicon nitride (Si3N4) surfaces as an effective way for oriented immobilization of biomolecules. An omega-unsaturated ester was grafted onto Si3N4 using UV irradiation. Hydrolysis followed by carbodiimide-mediated activation yielded surface-bound active

  18. Chemical interaction silicon nitride ceramics and iron alloys

    Directory of Open Access Journals (Sweden)

    Oliveira, F. J.

    2000-12-01

    Full Text Available Metal/ceramic diffusion experiments are helpful to study bonding mechanisms or the effect of metal composition on the chemical wear of ceramic cutting tools. The reaction kinetics of Fe alloys/Si3 N4 ceramic diffusion couples was investigated in the temperature range 1050ºC-1250ºC, for 0.5h to 80h, under inert atmosphere. Optical microscopy, SEM and EPMA were carried out in cross sections of the reacted pairs. Si3N4 decomposes into Si and N that dissolve and diffuse through the metal. Both the diffusion zone on the metal side and the reaction zone on the ceramic side obey parabolic growth laws of time, with activation energies in the range Q=310-460kJmol-1. The amount of dissolved Si, the length of the diffusion zone and thus the reactivity of the ceramic increase as the alloy carbon content decreases. Due to Si accumulation, the α-Fe solid solution is stabilised at the reaction temperature and a steep decrease in the Si concentration is observed beyond the diffusion zone. The reinforcement of the Si3N4 composites with A12O3 platelets enhances the chemical resistance of the ceramic due to the inertness of this oxide and to the partial crystallisation of the intergranular phase. Other dispersoids such as HfN, BN and TiN do not improve the chemical resistance of the matrix by iron attack.

    Los experimentos de difusión metal/cerámica permiten estudiar mecanismos de unión y analizar el efecto de la composición del metal en el desgaste químico de herramientas de corte cerámicas. En este trabajo se investigó la cinética de reacción en pares de difusión aleaciones de Fe/Si3N4 a temperaturas entre 1050ºC-1250ºC, tiempos entre 0.5h a 80h, en atmósfera inerte. Las secciones transversales de los pares de difusión se analizaron mediante microscopía óptica, SEM y microsonda electrónica. El Si3N4 se descompone en Si y N que se disuelven y difunden en el metal. Tanto la zona de difusión en el metal como la zona de reacción en la cer

  19. The preparation and characterization of nearly hysteresis-free metal-nitride-silicon capacitors on both p- and n-type silicon substrates

    Science.gov (United States)

    Lau, W. S.

    1992-01-01

    The hysteresis in metal-nitride-silicon (MNS) capacitors can be reduced to nearly zero by using nitrogen-rich silicon nitride as the gate dielectric and treating the silicon substrate by an ammonia plasma before dielectric deposition. However, the ammonia plasma treatment step also causes an increase in interface state density, especially in the middle of the silicon band gap. Without the ammonia plasma treatment, the virgin flat-band voltage V*FB is always negative. With the ammonia plasma treatment, V*FB can be shifted from a negative value to zero for MNS capacitors on n-type silicon, whereas V*FB will be shifted from a negative value to a more negative value for MNS capacitors on p-type silicon. These effects can be explained by postulating that the interface states generated by the ammonia plasma treatment step are amphoteric defects similar to Pb centers at the oxide/silicon interface in metal-oxide-silicon capacitors.

  20. Identification of crack path of inter- and transgranular fractures in sintered silicon nitride by in situ TEM.

    Science.gov (United States)

    Ii, Seiichiro; Iwamoto, Chihiro; Matsunaga, Katsuyuki; Yamamoto, Takahisa; Ikuhara, Yuichi

    2004-01-01

    Inter- and/or transgranular crack paths in sintered silicon nitride (Si3N4) during fracture were investigated by in situ straining experiments in a transmission electron microscope at room temperature, using a high-precision micro-indenter. By this technique, cracks introduced in an in situ manner were observed to propagate in the grain interior and along grain boundaries. High-resolution electron microscopy (HREM) observation revealed that the crack propagation takes place at an interface between Si3N4 grains and an intergranular glassy film (IGF) in the case of intergranular fractures. According to the results by previous molecular dynamics simulations, a number of dangling bonds are present at the Si3N4/IGF interface, which should result in the observed fracture behavior at the interface. On the other hand, the crack path introduced during transgranular fracture of Si3N4 grains was found to be sharp and straight. The observed crack propagated towards [1120] inside the Si3N4 grain with the crack surface parallel to the (1100) plane. The HREM observations of crack walls revealed them to be atomically flat. The atomic termination of the crack walls was identified in combination with image simulations based on atomic models of the cleaved crack walls.

  1. Preparation and characterization of electrochemically deposited carbon nitride films on silicon substrate

    International Nuclear Information System (INIS)

    Yan Xingbin; Xu Tao; Chen Gang; Yang Shengrong; Liu Huiwen; Xue Qunji

    2004-01-01

    Carbon nitride films (CN x films) were deposited on Si(100) substrates by the electrolysis of methanol-urea solution at high voltage, atmospheric pressure, and low temperature. The microstructure and morphology of the resulting CN x films were analysed by means of Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectrometry (FTIR), x-ray diffraction (XRD), and atomic force microscopy. The tribological properties of the CN x films were examined on an UMT-2MT friction and wear test rig. The Raman spectrum showed two characteristic bands: a graphite G band and a disordered D band of carbon, which suggested the presence of an amorphous carbon matrix. XPS and FTIR measurements suggested the existence of both single and double carbon-nitride bonds in the film and the hydrogenation of the carbon nitride phase. The XRD spectrum showed various peaks of different d values, which could confirm the existence of the polycrystalline carbon nitride phase. The hydrogenated CN x films were compact and uniform, with a root mean square roughness of about 18 nm. The films showed excellent friction-reduction and wear-resistance, with the friction coefficient in the stable phase being about 0.08. In addition, the growth mechanism of the CN x films in liquid phase electro-deposition was discussed as well. It was assumed that the molecules of CH 3 OH and CO(NH 2 ) 2 were polarized under high electric field, and the CN x film was formed on the substrate through the reaction of the -CH 3 and -NH 2 groups on the cathode

  2. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  3. Oxidation and crystallization behavior of calcium europium silicon nitride thin films during rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Jong, M. de, E-mail: m.dejong-1@tudelft.nl [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Enter, V.E. van, E-mail: vvanenter@gmail.com [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Schuring, E.W., E-mail: schuring@ecn.nl [Energy Center of the Netherlands, Westerduinweg 3, 1755LE Petten (Netherlands); Kolk, E. van der, E-mail: e.vanderkolk@tudelft.nl [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands)

    2016-03-31

    Luminescent thin films were fabricated on silicon wafers using reactive magnetron sputtering of Ca, Si and Eu in Ar/N{sub 2} atmosphere. In order to activate the luminescence, the as-deposited nitride films were heated to 1100 °C by a rapid thermal processing treatment. X-ray diffraction measurements reveal the crystal phases that form during thermal treatment. By recording scanning electron microscopy images of the surface and the cross-section of the film at different radial locations, the formation of different layers with a thickness depending on the radial position is revealed. Energy dispersive x-ray spectroscopy analysis of these cross-sections reveals the formation of an oxide top layer and a nitride bottom layer. The thickness of the top layer increases as a function of radial position on the substrate and the thickness of the bottom layer decreases accordingly. The observation of different 4f{sup 6}5d{sup 1} → 4f{sup 7} Eu{sup 2+} luminescence emission bands at different radial positions correspond to divalent Eu doped Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, Ca{sub 2}SiO{sub 4} and CaSiO{sub 3}, which is in agreement with the phases identified by X-ray diffraction analysis. A mechanism for the observed oxidation process of the nitride films is proposed that consists of a stepwise oxidation from the as-deposited amorphous nitride state to crystalline Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, to Ca{sub 2}SiO{sub 4} and finally CaSiO{sub 3}. The oxidation rate and final state of oxidation show a strong temperature–time dependency during anneal treatment. - Highlights: • A thin film of nitridated Ca, Si and Eu was deposited using magnetron sputtering. • Rapid thermal processing (RTP) results in Eu{sup 2+} doped Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, Ca{sub 2}SiO{sub 4}, and CaSiO{sub 3}. • Oxidation rate differs with radial position due to a temperature gradient during RTP. • Cross-section SEM–EDX shows how the oxidation progresses in lateral direction.

  4. Effect of Stress and Temperature on the Optical Properties of Silicon Nitride Membranes at 1,550 nm

    Directory of Open Access Journals (Sweden)

    Mark Fletcher

    2018-01-01

    Full Text Available Future gravitational-wave detectors operated at cryogenic temperatures are expected to be limited by thermal noise of the highly reflective mirror coatings. Silicon nitride is an interesting material for such coatings as it shows very low mechanical loss, a property related to low thermal noise, which is known to further decrease under stress. Low optical absorption is also required to maintain the low mirror temperature. Here, we investigate the effect of stress on the optical properties at 1,550 nm of silicon nitride membranes attached to a silicon frame. Our approach includes the measurement of the thermal expansion coefficient and the thermal conductivity of the membranes. The membrane and frame temperatures are varied, and translated into a change in stress using finite element modeling. The resulting product of the optical absorption and thermo-optic coefficient (dn/dT is measured using photothermal common-path interferometry.

  5. Interfacial bonding and friction in silicon carbide (filament)-reinforced ceramic- and glass-matrix composites

    International Nuclear Information System (INIS)

    Bright, J.D.; Shetty, D.K.

    1989-01-01

    This paper reports interfacial shear strength and interfacial sliding friction stress assessed in unidirectional SiC-filament-reinforced reaction-bonded silicon nitride (RBSN) and borosilicate glass composites and 0/90 cross-ply reinforced borosilicate glass composite using a fiber pushout test technique. The interface debonding load and the maximum sliding friction load were measured for varying lengths of the embedded fibers by continuously monitoring the load during debonding and pushout of single fibers in finite-thickness specimens. The dependences of the debonding load and the maximum sliding friction load on the initial embedded lengths of the fibers were in agreement with nonlinear shear-lag models. An iterative regression procedure was used to evaluate the interfacial properties, shear debond strength (τ d ), and sliding friction stress (τ f ), from the embedded fiber length dependences of the debonding load and the maximum frictional sliding load, respectively. The shear-lag model and the analysis of sliding friction permit explicit evaluation of a coefficient of sliding friction (μ) and a residual compressive stress on the interface (σ 0 ). The cross-ply composite showed a significantly higher coefficient of interfacial friction as compared to the unidirectional composites

  6. Characterization of bulk-micromachined direct-bonded silicon nanofilters

    Science.gov (United States)

    Tu, Jay K.; Huen, Tony; Szema, Robert; Ferrari, Mauro

    1998-03-01

    The ability to separate 30-100 nm particles - nanofiltration - is critical for many biomedical applications. Where this filtration needs to be absolute, such as for viral elimination in the blood fractionation process, the large variations in pore size found with conventional polymeric filters can lead to the unwanted presence of viruses in the filtrate. To overcome this problem, we have developed a filter with micromachined channels sandwiched between two bonded silicon wafers. These channels are formed through the selective deposition and then removal of a thermally-grown oxide, the thickness of which can be controlled to +/- 4 percent for 30 nm pores. In this paper, we will present both the gas and liquid characterization, and the filtration studies done on 44 and 100 nm beads.

  7. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  8. Optical absorption of silicon nitride membranes at 1064 nm and at 1550 nm

    Science.gov (United States)

    Steinlechner, Jessica; Krüger, Christoph; Martin, Iain W.; Bell, Angus; Hough, Jim; Kaufer, Henning; Rowan, Sheila; Schnabel, Roman; Steinlechner, Sebastian

    2017-07-01

    Because of a low mechanical loss, thin films made of silicon nitride (Si3N4 ) are interesting for fundamental research and development in the field of gravitational-wave detection. Si3N4 membranes allow for the characterization of quantum radiation pressure noise (RPN), which will be a limiting noise source in gravitational-wave detectors of the second and third generations. Furthermore, Si3N4 is an interesting material for possible thermal noise reduction in highly reflective mirror coatings. For both applications, the optical absorption of Si3N4 needs to be low. This paper presents absorption measurements on low-stress Si3N4 membranes showing an absorption a factor of 7 lower at 1550 nm than at 1064 nm resulting in an estimated 2 times higher sensitivity in RPN experiments at the higher wavelength and making Si3N4 an interesting material for highly reflective multimaterial mirror coatings at 1550 nm.

  9. Observation of ultraslow stress release in silicon nitride films on CaF2

    International Nuclear Information System (INIS)

    Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

    2015-01-01

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF 2 crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN x film on (111) CaF 2 is larger than that of SiN x film with the same thickness on (100) CaF 2 . The velocities of SiN x film on both (100) and (111) CaF 2 increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy

  10. Slot silicon-gallium nitride waveguide in MMI structures based 1x8 wavelength demultiplexer

    Science.gov (United States)

    Ben Zaken, Bar Baruch; Zanzury, Tal; Malka, Dror

    2017-06-01

    We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operated at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm and 1565 nm wavelengths. Gallium nitride (GaN) surrounded by silicon (Si) was founded as suitable materials for the slot-waveguide structures. The proposed device was designed by seven 1x2 MMI couplers, fourteen S-band and one input taper. Numerical investigations were carried out on the geometrical parameters by using a full vectorial-beam propagation method (FVBPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530- 1565 nm) with low crosstalk ((-19.97)-(-13.77) dB) and bandwidth (1.8-3.6 nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology.

  11. Pressure dependence of the refractive index of diamond, cubic silicon carbide and cubic boron nitride

    Science.gov (United States)

    Balzaretti, N. M.; da Jornada, J. A. H.

    1996-09-01

    The pressure dependence of the refractive index of diamond, cubic boron nitride and cubic silicon carbide, was measured up to 9 GPa by an interferometric method using the diamond anvil cell. A least-square fit yields the following values for ( {1}/{n}) ( {dn }/{dP }): - 3.6 × 10 -4GPa -1 for diamond, -3.2 × 10 -4GPa -1 for c-BN and, for 3CSiC, -8.3 × 10 -4GPa -1. These results were used to investigate, for the first time under pressure, general empirical relationships between refractive index and energy gap found in the literature. The volume dependence of the electronic polarizability, α, of these compounds was determined through the Lorentz-Lorenz approach. The obtained linear behavior of α for the three cases was correlated to previous results for the pressure dependence of the transverse effective charge, e T∗.

  12. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  13. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  14. Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

    International Nuclear Information System (INIS)

    de Nivelle, M.J.; Bruijn, M.P.; de Vries, R.; Wijnbergen, J.J.; de Korte, P.A.; Sanchez, S.; Elwenspoek, M.; Heidenblut, T.; Schwierzi, B.; Michalke, W.; Steinbeiss, E.

    1997-01-01

    High-T c GdBa 2 Cu 3 O 7-δ superconductor bolometers with operation temperatures near 89 K, large receiving areas of 0.95mm 2 and very high detectivity have been made. The bolometers are supported by 0.62 μm thick silicon nitride membranes. A specially developed silicon-on-nitride layer was used to enable the epitaxial growth of the high-T c superconductor. Using a gold black absorption layer an absorption efficiency for wavelengths between 70 and 200 μm of about 83% has been established. The noise of the best devices is fully dominated by the intrinsic phonon noise of the thermal conductance G, and not by the 1/f noise of the superconducting film. The temperature dependence of the noise and the resulting optimum bias temperature have been investigated. In the analysis the often neglected effect of electrothermal feedback has been taken into account. The minimum electrical noise equivalent power (NEP) of a bolometer with a time constant τ of 95 ms is 2.9pW/Hz 1/2 which corresponds with an electrical detectivity D * of 3.4x10 10 cmHz 1/2 /W. Similar bolometers with τ=27ms and NEP=3.8pW/Hz 1/2 were also made. No degradation of the bolometers could be observed after vibration tests, thermal cycling and half a year storage. Measurements of the noise of a Pr doped YBa 2 Cu 3 O 7-δ film with T c =40K show that with such films the performance of air bridge type high-T c bolometers could be improved. copyright 1997 American Institute of Physics

  15. Electron irradiation effects on the nucleation and growth of Au nanoparticles in silicon nitride membranes

    Science.gov (United States)

    Timm, M. M.; Fabrim, Z. E.; Marin, C.; Baptista, D. L.; Fichtner, P. F. P.

    2017-10-01

    The formation of Au nanoparticles (NPs) in Au+ ion-implanted silicon nitride thin films and membranes was investigated as a function of post-implantation thermal treatments or room temperature electron irradiation at energies of 80, 120, 160, and 200 keV. The samples were characterized by Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. High-temperature thermal annealing (1100 °C, 1 h) resulted in the formation of Au particles with a mean diameter of ≈1.3 nm. In comparison, room-temperature electron irradiation at energies from 80 to 200 keV caused the formation of larger Au particles according to two growth regimes. The first regime is characterized by a slow growth rate and occurs inside the silicon nitride membrane. The second regime presents a fast growth rate and starts when Au atoms become exposed to the back free surface of the membrane. Realistic binary electron-atom elastic collision cross-sections were used to analyze the observed nanoparticle growth and membrane sputtering phenomena. The results obtained demonstrate that binary electron-atom elastic collisions can account for the microstructure modifications if the critical displacement energies for the sputtering of N and Si atoms are around 14 ± 3 eV, and the displacement energy for surface located Au atoms is approximately 1.25 ± 0.2 eV. Irradiation experiments using focused electron probes demonstrate that the process provides fine control of nanoparticle formation, resulting in well-defined sizes and locations.

  16. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  17. Performance Improvements of Metal-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation

    Science.gov (United States)

    Chen, Jian-Xiong; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To

    2013-08-01

    The properties of ZrO2 and ZrON as the charge-trapping layer (CTL) of metal-oxide-nitride-oxide-silicon memory are investigated. The microstructure and chemical bonding are examined by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that nitrogen incorporation in ZrO2 can induce more charge-trapping sites, effectively suppress the formation of zirconium silicate (leading to better interface quality between the CTL and the SiO2 tunneling layer), and increase the dielectric constant of ZrO2, thus improving the memory performances (large memory window, high program/erase speed, good endurance characteristics, and small charge loss).

  18. Ductile mode grinding of reaction-bonded silicon carbide mirrors.

    Science.gov (United States)

    Dong, Zhichao; Cheng, Haobo

    2017-09-10

    The demand for reaction-bonded silicon carbide (RB-SiC) mirrors has escalated recently with the rapid development of space optical remote sensors used in astronomy or Earth observation. However, RB-SiC is difficult to machine due to its high hardness. This study intends to perform ductile mode grinding to RB-SiC, which produces superior surface integrity and fewer subsurface damages, thus minimizing the workload of subsequent lapping and polishing. For this purpose, a modified theoretical model for grain depth of cut of grinding wheels is presented, which correlates various processing parameters and the material characteristics (i.e., elastic module) of a wheel's bonding matrix and workpiece. Ductile mode grinding can be achieved as the grain depth of cut of wheels decreases to be less than the critical cut depth of workpieces. The theoretical model gives a roadmap to optimize the grinding parameters for ductile mode grinding of RB-SiC and other ultra-hard brittle materials. Its feasibility was validated by experiments. With the optimized grinding parameters for RB-SiC, the ductile mode grinding produced highly specular surfaces (with roughness of ∼2.2-2.8  nm Ra), which means the material removal mechanism of RB-SiC is dominated by plastic deformation rather than brittle fracture. Contrast experiments were also conducted on fused silica, using the same grinding parameters; this produced only very rough surfaces, which further validated the feasibility of the proposed model.

  19. Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, I.; Jankowski, A.F.; Terminello, L.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-center bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.

  20. Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

    International Nuclear Information System (INIS)

    Ding Yanfang; Zhu Ziqiang; Zhu Ming; Lin Chenglu

    2006-01-01

    Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times higher than that of SiO 2 (320 W·m -1 ·K -1 versus 1.4 W·m -1 ·K -l ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AIN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions. (authors)

  1. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  2. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride

    International Nuclear Information System (INIS)

    Oversluizen, G.; Lodders, W.H.; Johnson, M.T.; van der Put, A.A.

    1997-01-01

    The dc-current stress behavior of Mo/a-SiN x H y /Mo thin-film diodes is discussed for several a-SiN x H y -plasma-deposition conditions. Current transport is governed by thermionic field emission of electrons over a reverse biased Schottky barrier. The barrier height is determined by the a-SiN x H y -plasma-deposition conditions. Therefore these back-to-back Schottky devices provide an elegant way to perform dc-current stressing at several well defined carrier densities for similar stress fields. It is shown that such experiments allow assessment of defect-state creation/anneal mechanisms in a-SiN x H y . An electron-trapping-triggered anneal mechanism accounts for the observed dependence of the defect density at the electrode injecting contact (cathode) on the hole-barrier height at the anode. Also a new microscopically detailed anneal reaction scheme is proposed. The defect-state creation/anneal mechanism is expected to be generally applicable for all silicon-rich hydrogenated amorphous silicon alloys. copyright 1997 American Institute of Physics

  3. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  4. C=C π Bond Modified Graphitic Carbon Nitride Films for Enhanced Photoelectrochemical Cell Performance.

    Science.gov (United States)

    Bian, Juncao; Xi, Lifei; Li, Jianfu; Xiong, Ze; Huang, Chao; Lange, Kathrin M; Tang, Jinyao; Shalom, Menny; Zhang, Rui-Qin

    2017-05-04

    Applications of graphitic carbon nitride (g-CN) in photoelectrochemical and optoelectronic devices are still hindered due to the difficulties in synthesis of g-CN films with tunable chemical, physical and catalytic properties. Herein we present a general method to alter the electronic and photoelectrochemical properties of g-CN films by annealing. We found that N atoms can be removed from the g-CN networks after annealing treatment. Assisted by theoretical calculations, we confirm that upon appropriate N removal, the adjacent C atoms will form new C=C π bonds. Detailed calculations demonstrate that the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are located at the structure unit with C=C π bonds and the electrons are more delocalized. Valence band X-ray photoelectron spectroscopy spectra together with optical absorption spectra unveil that the structure changes result in the alteration of the g-CN energy levels and position of band edges. Our results show that the photocurrent density of the annealed g-CN film is doubled compared with the pristine one, thanks to the better charge separation and transport within the film induced by the new C=C π bonds. An ultrathin TiO 2 film (2.2 nm) is further deposited on the g-CN film as stabilizer and the photocurrent density is kept at 0.05 mA cm -2 at 1.23 V versus reversible hydrogen electrode after two-cycle stability assessment. This work enables the applications of g-CN films in many electronic and optoelectronic devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Effect of Stress and Temperature on the Optical Properties of Silicon Nitride Membranes at 1,550 nm

    OpenAIRE

    Mark Fletcher; Simon Tait; Jessica Steinlechner; Jessica Steinlechner; Iain W. Martin; Angus S. Bell; James Hough; Sheila Rowan; Roman Schnabel

    2018-01-01

    Future gravitational-wave detectors operated at cryogenic temperatures are expected to be limited by thermal noise of the highly reflective mirror coatings. Silicon nitride is an interesting material for such coatings as it shows very low mechanical loss, a property related to low thermal noise, which is known to further decrease under stress. Low optical absorption is also required to maintain the low mirror temperature. Here, we investigate the effect of stress on the optical properties at ...

  6. Electronic properties of interfaces produced by silicon wafer hydrophilic bonding

    Energy Technology Data Exchange (ETDEWEB)

    Trushin, Maxim

    2011-07-15

    The thesis presents the results of the investigations of electronic properties and defect states of dislocation networks (DNs) in silicon produced by wafers direct bonding technique. A new insight into the understanding of their very attractive properties was succeeded due to the usage of a new, recently developed silicon wafer direct bonding technique, allowing to create regular dislocation networks with predefined dislocation types and densities. Samples for the investigations were prepared by hydrophilic bonding of p-type Si (100) wafers with same small misorientation tilt angle ({proportional_to}0.5 ), but with four different twist misorientation angles Atw (being of < , 3 , 6 and 30 , respectively), thus giving rise to the different DN microstructure on every particular sample. The main experimental approach of this work was the measurements of current and capacitance of Schottky diodes prepared on the samples which contained the dislocation network at a depth that allowed one to realize all capabilities of different methods of space charge region spectroscopy (such as CV/IV, DLTS, ITS, etc.). The key tasks for the investigations were specified as the exploration of the DN-related gap states, their variations with gradually increasing twist angle Atw, investigation of the electrical field impact on the carrier emission from the dislocation-related states, as well as the establishing of the correlation between the electrical (DLTS), optical (photoluminescence PL) and structural (TEM) properties of DNs. The most important conclusions drawn from the experimental investigations and theoretical calculations can be formulated as follows: - DLTS measurements have revealed a great difference in the electronic structure of small-angle (SA) and large-angle (LA) bonded interfaces: dominating shallow level and a set of 6-7 deep levels were found in SA-samples with Atw of 1 and 3 , whereas the prevalent deep levels - in LA-samples with Atw of 6 and 30 . The critical twist

  7. Improved memory performance of metal—oxide—nitride—oxide—silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

    Science.gov (United States)

    Meilin, He; Jingping, Xu; Jianxiong, Chen; Lu, Liu

    2013-11-01

    Metal—oxide—nitride—oxide—silicon (MONOS) capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation (NH3, NO and N2O) on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient exhibits excellent memory characteristics, i.e. a large memory window, high program/erase speed, and good endurance and retention performance (the charge loss rate is 14.5% after 10 years). The mechanism involved is that much more nitrogen is incorporated into the tunnel oxide during NO annealing, resulting in a lower tunneling barrier height and smaller interface state density. Thus, there is a higher tunneling rate under a high electric field and a lower probability of trap-assisted tunneling during retention, as compared to N2O annealing. Furthermore, compared with the NH3-annealed device, no weak Si—H bonds and electron traps related to the hydrogen are introduced for the NO-annealed devices, giving a high-quality and high-reliability SiON tunneling layer and SiON/Si interface due to the suitable nitridation and oxidation roles of NO.

  8. WEAR PERFORMANCE OPTIMIZATION OF SILICON NITRIDE USING GENETIC AND SIMULATED ANNEALING ALGORITHM

    Directory of Open Access Journals (Sweden)

    SACHIN GHALME

    2017-12-01

    Full Text Available Replacing damaged joint with the suitable alternative material is a prime requirement in a patient who has arthritis. Generation of wear particles in the artificial joint during action or movement is a serious issue and leads to aseptic loosening of joint. Research in the field of bio-tribology is trying to evaluate materials with minimum wear volume loss so as to extend joint life. Silicon nitride (Si3N4 is non-oxide ceramic suggested as a new alternative for hip/knee joint replacement. Hexagonal Boron Nitride (hBN is recommended as a solid additive lubricant to improve the wear performance of Si3N4 . In this paper, an attempt has been made to evaluate the optimum combination of load and % volume of hBN in Si3N4 to minimize wear volume loss (WVL. The experiments were conducted according to Design of Experiments (DoE – Taguchi method and a mathematical model is developed. Further, this model is processed with Genetic Algorithm (GA and Simulated Annealing (SA to find out the optimum percentage of hBN in Si3N4 to minimize wear volume loss against Alumina (Al2O3 counterface. Taguchi method presents 15 N load and 8% volume of hBN to minimize WVL of Si3N4 . While GA and SA optimization offer 11.08 N load, 12.115% volume of hBN and 11.0789 N load, 12.128% volume of hBN respectively to minimize WVL in Si3N4. .

  9. Activation of dinitrogen-derived hafnium nitrides for nucleophilic N-C bond formation with a terminal isocyanate.

    Science.gov (United States)

    Semproni, Scott P; Chirik, Paul J

    2013-12-02

    Better by Hf: Anion coordination to a bridging hafnocene nitride complex, prepared from CO-induced N2 cleavage, increases the nucleophilicity of the nitrogen atom, thus promoting additional NC bond formation with a typically inert terminal isocyanate ligand. This cascade sequence allows synthesis of otherwise challenging mono-substituted ureas using N2 , CO, and an appropriate electrophile. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Science.gov (United States)

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  11. Interfacial-Bonding-Regulated CO Oxidation over Pt Atoms Immobilized on Gas-Exfoliated Hexagonal Boron Nitride

    KAUST Repository

    Liu, Xin

    2017-10-12

    We compared the electronic structure and CO oxidation mechanisms over Pt atoms immobilized by both B-vacancies and N-vacancies on gas-exfoliated hexagonal boron nitride. We showed that chemical bonds are formed between the B atoms associated with dangling bonds around the vacancies and Pt atoms. These bonds not only alter the thermodynamics and kinetics for the aggregation and effectively immobilize Pt atoms, but also significantly change the composition and energetic distribution of the electronic states of the composites to circumvent CO poisoning and to favour coadsorption of CO and O2, which further regulates the reactions to proceed through a Langmuir-Hinshelwood mechanism. The CO oxidation over Pt atoms immobilized at N-vacancies involves formation of an intermediate with –C(O)-O−O- bonded to Pt, the generation of CO2 by peroxo O−O bond scission and the reduction of the remnant oxygen, and the calculated energy barriers are 0.49, 0.23 and 0.18 eV, respectively. Such small energy barriers are comparable to those over Pt atoms trapped at B-vacancies, showing the effectiveness of Pt/hexagonal boron nitride atomic composites as catalysts for CO oxidation. These findings also suggest the feasibility of regulating the reaction pathways over single atom catalysts via interfacial engineering.

  12. Proposal of a Failure Criterion of Adhesively Bonded Connections with Silicone

    OpenAIRE

    Staudt, Yves Nico Louis

    2017-01-01

    In the field of façade engineering, structural silicone sealants have been used in adhesively bonded connections since the 1960s. The low strength and stiffness of silicone rubber compared to other types of adhesives are compensated by the excellent adhesion properties and the good resistance against ageing and environmental influences, like UV radiation. Silicone sealants show a pronounced nonlinear material behaviour. The applicable design concepts in civil engineering propose simplified de...

  13. Preservation of atomically clean silicon surfaces in air by contact bonding

    DEFF Research Database (Denmark)

    Grey, Francois; Ljungberg, Karin

    1997-01-01

    When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the or......When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find...... that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface...

  14. Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

    Science.gov (United States)

    Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.

    2014-06-01

    A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

  15. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni_2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm"2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  16. Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-03-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. (c) 2010 Elsevier Inc. All rights reserved.

  17. Processing of Silicon Nitride Ceramics from Concentrated Aqueous Suspensions by Robocasting

    Energy Technology Data Exchange (ETDEWEB)

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH; STUECKER,JOHN N.

    2000-08-14

    The optimization of concentrated AlliedSignal GS-44 silicon nitride aqueous slurries for robocasting was investigated. The dispersion mechanisms of GS-44 Si{sub 3}N{sub 4} aqueous suspensions with and without polyacrylate were analyzed. The zero point of charge (ZPC) was at about pH 6. Well-dispersed GS-44 suspensions were obtained in the pH range from 7 to 11 by the addition of Darvan 821A. The influence of pH, amount of Darvan 821A and solids loading on the theological behavior of GS-44 aqueous suspensions was determined. A coagulant, aluminum nitrate, was used to control the yield stress and shear thinning behavior of highly loaded Si{sub 3}N{sub 4} slurries. Homogeneous and stable suspensions of 52 vol% GS-44 Si{sub 3}N{sub 4} were robocast successfully at pH 7.8 to pH 8.5. The sintering process, mechanical properties and microstructural characteristics of robocast GS-44 bars were determined.

  18. Investigation of mechanical properties of CVD grown titanium silicon nitride thin films under reduced atmosphere

    Science.gov (United States)

    Guha, Spandan; Das, Soham; Bandyopadhyay, Asish; Das, Santanu; Swain, Bibhu P.

    2018-01-01

    Titanium silicon nitride (TiSiN) thin films were deposited by thermal chemical vapour deposition using TiO2 + Si3N4 powder with different H2 flow rates. Morphological, structural, and mechanical properties of deposited TiSiN films were characterized using different techniques by SEM, XRD, Raman, and nano-indentation. SEM images reveal that surface roughness of TiSiN thin films decreased with increasing of H2 flow rate. The Raman spectroscopy indicated that the intensity of acoustic phonon mode decreases, whereas intensity of optical phonon mode increases with increasing of H2 flow rate. The maximum hardness, Young's modulus, and yield strength of the TiSiN films are 18.23, 185.26, and 83.2 GPa, respectively. The crystallite size and lattice strain of TiSiN thin films vary 2.08-4.43 nm and 0.02-0.055, respectively, for different H2 flow rates. The quantitative and qualitative analyses of TiSiN thin were carried out using the Origin 9.0 software.

  19. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D.; Efetov, Dmitri K.; Assefa, Solomon; Koppens, Frank H. L.; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  20. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  1. Nano-mechanical measurements of protein-DNA interactions with a silicon nitride pulley.

    Science.gov (United States)

    Shon, Min Ju; Cohen, Adam E

    2016-01-08

    Proteins adhere to DNA at locations and with strengths that depend on the protein conformation, the underlying DNA sequence and the ionic content of the solution. A facile technique to probe the positions and strengths of protein-DNA binding would aid in understanding these important interactions. Here, we describe a 'DNA pulley' for position-resolved nano-mechanical measurements of protein-DNA interactions. A molecule of λ DNA is tethered by one end to a glass surface, and by the other end to a magnetic bead. The DNA is stretched horizontally by a magnet, and a nanoscale knife made of silicon nitride is manipulated to contact, bend and scan along the DNA. The mechanical profile of the DNA at the contact with the knife is probed via nanometer-precision optical tracking of the magnetic bead. This system enables detection of protein bumps on the DNA and localization of their binding sites. We study theoretically the technical requirements to detect mechanical heterogeneities in the DNA itself. © The Author(s) 2015. Published by Oxford University Press on behalf of Nucleic Acids Research.

  2. Two color DNA barcode detection in photoluminescence suppressed silicon nitride nanopores.

    Science.gov (United States)

    Assad, Ossama N; Di Fiori, Nicolas; Squires, Allison H; Meller, Amit

    2015-01-14

    Optical sensing of solid-state nanopores is a relatively new approach that can enable high-throughput, multicolor readout from a collection of nanopores. It is therefore highly attractive for applications such as nanopore-based DNA sequencing and genotyping using DNA barcodes. However, to date optical readout has been plagued by the need to achieve sufficiently high signal-to-noise ratio (SNR) for single fluorophore sensing, while still maintaining millisecond resolution. One of the main factors degrading the optical SNR in solid-state nanopores is the high photoluminescence (PL) background emanating from the silicon nitride (SiNx) membrane in which pores are commonly fabricated. Focusing on the optical properties of SiNx nanopores we show that the local membrane PL intensity is substantially reduced, and its spectrum is shifted toward shorter wavelengths with increasing e-beam dose. This phenomenon, which is correlated with a marked photocurrent enhancement in these nanopores, is utilized to perform for the first time single molecule fluorescence detection using both green and red laser excitations. Specifically, the reduction in PL and the concurrent measurement of the nanopore photocurrent enhancement allow us to maximize the background suppression and to detect a dual color, five-unit DNA barcode with high SNR levels.

  3. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    Science.gov (United States)

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-09

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  4. The improvement of wave-absorbing ability of silicon carbide fibers by depositing boron nitride coating

    Science.gov (United States)

    Ye, Fang; Zhang, Litong; Yin, Xiaowei; Liu, Yongsheng; Cheng, Laifei

    2013-04-01

    This work investigated electromagnetic wave (EMW) absorption and mechanical properties of silicon carbide (SiC) fibers with and without boron nitride (BN) coating by chemical vapor infiltration (CVI). The dielectric property and EM shielding effectiveness of SiC fiber bundles before and after being coated by BN were measured by wave guide method. The EM reflection coefficient of SiC fiber laminates with and without BN coating was determined by model calculation and NRL-arc method, respectively. Tensile properties of SiC fiber bundles with and without BN coating were tested at room temperature. Results show that SiC fibers with BN coating had a great improvement of EMW absorbing property because the composites achieved the impedance matching. BN with the low permittivity and dielectric loss contributed to the enhancive introduction and reduced reflection of EMW. The tensile strength and Weibull modulus of SiC fiber bundles coated by BN increased owing to the decrease of defects in SiC fibers and the protection of coating during loading.

  5. Characteristics of laser assisted machining for silicon nitride ceramic according to machining parameters

    International Nuclear Information System (INIS)

    Kim, Jong Do; Lee, Su Jin; Suh, Jeong

    2011-01-01

    This paper describes the Laser Assisted Machining (LAM) that cuts and removes softened parts by locally heating the ceramic with laser. Silicon nitride ceramics can be machined with general machining tools as well, because YSiAlON, which was made up ceramics, is soften at about 1,000 .deg. C. In particular, the laser, which concentrates on highly dense energy, can locally heat materials and very effectively control the temperature of the heated part of specimen. Therefore, this paper intends to propose an efficient machining method of ceramic by deducing the machining governing factors of laser assisted machining and understanding its mechanism. While laser power is the machining factor that controls the temperature, the CBN cutting tool could cut the material more easily as the material gets deteriorated from the temperature increase by increasing the laser power, but excessive oxidation can negatively affect the quality of the material surface after machining. As the feed rate and cutting depth increase, the cutting force increases and tool lifespan decreases, but surface oxidation also decreases. In this experiment, the material can be cut to 3 mm of cutting depth. And based on the results of the experiment, the laser assisted machining mechanism is clarified

  6. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Science.gov (United States)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  7. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  8. Analysis of Carrier Traps in Si3N4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

    Science.gov (United States)

    Aozasa, Hiroshi; Fujiwara, Ichiro; AkihiroNakamura, AkihiroNakamura; Komatsu, Yasutoshi

    1999-03-01

    The energy level, density and attempt to escape frequency ofcarrier traps in an Si3N4 film in tunnel oxide/nitride/oxide(ONO) multilayer for metal/oxide/nitride/oxide/silicon (MONOS)nonvolatile memory are investigated by discharging current transientspectroscopy (DCTS). To analyze the electrical properties of carriertraps observed through DCTS, a new model including the tunnelingprobability of the tunnel oxide film between the Si3N4 filmand an Si substrate was proposed. As a result, the electron traps inthe Si3N4 film, which are assumed to be related to thethreshold voltage decay, i.e. data retention, were found for the firsttime. The energy level of the electron traps in the Si3N4film in the ONO multilayer was 0.8 0.9 eV from the conduction bandand the density was 1 5×1018 cm-3. Theattempt to escape frequency of 2×1014 s-1 was alsoobtained. The energy level of the hole traps and its density were0.8 0.9 eV from the top of the valence band and 1 4×1018 cm-3, respectively. The magnitude of the trap density obtained from DCTS shows good agreement with that obtained from memory hysteresis characteristics. These results indicate that their carrier traps are amphoteric traps.

  9. Morphology and stress at silicon-glass interface in anodic bonding

    International Nuclear Information System (INIS)

    Tang, Jiali; Cai, Cheng; Ming, Xiaoxiang; Yu, Xinhai; Zhao, Shuangliang; Tu, Shan-Tung; Liu, Honglai

    2016-01-01

    Highlights: • Amorphous SiO 2 is the most probable silica morphology generated in anodic bonding. • Amorphous SiO 2 thickness at the interface is at least 2 nm for 90 min anodic bonding. • Silicon oxidation rate at the interface is 0.022 nm min −1 from 30 to 90 min. - Abstract: The morphologies and structural details of formed silica at the interface of silicon-glass anodic bonding determine the stress at the interface but they have been rarely clarified. In this study, a miniaturized anodic bonding device was developed and coupled with a Raman spectrometer. The silicon-glass anodic bonding was carried out and the evolution of the stress at the bonding interface was measured in situ by a Raman spectrometer. In addition, large-scale atomistic simulations were conducted by considering the formed silica with different morphologies. The most conceivable silica morphology was identified as the corresponding silicon-glass interfacial stress presents qualitatively agreement with the experimental observation. It was found that amorphous SiO 2 is the silica morphology generated in anodic bonding. The amorphous SiO 2 thickness is at least 2 nm in the case of 90 min anodic bonding at 400 °C with the DC voltage of −1000 V. The combination of experimental and simulation results can ascertain the silicon oxidation reaction rate in anodic bonding process, and under the above-mentioned condition, the reaction rate was estimated as 0.022 nm min −1 from 30 to 90 min.

  10. Morphology and stress at silicon-glass interface in anodic bonding

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jiali [Key Laboratory of Pressure Systems and Safety (MOE), School of Mechanical Engineering, East China University of Science and Technology, Shanghai 200237 (China); Cai, Cheng [State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai (China); Ming, Xiaoxiang [Key Laboratory of Pressure Systems and Safety (MOE), School of Mechanical Engineering, East China University of Science and Technology, Shanghai 200237 (China); State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai (China); Yu, Xinhai, E-mail: yxhh@ecust.edu.cn [Key Laboratory of Pressure Systems and Safety (MOE), School of Mechanical Engineering, East China University of Science and Technology, Shanghai 200237 (China); State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); Zhao, Shuangliang, E-mail: szhao@ecust.edu.cn [State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai (China); Tu, Shan-Tung [Key Laboratory of Pressure Systems and Safety (MOE), School of Mechanical Engineering, East China University of Science and Technology, Shanghai 200237 (China); Liu, Honglai [State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai (China)

    2016-11-30

    Highlights: • Amorphous SiO{sub 2} is the most probable silica morphology generated in anodic bonding. • Amorphous SiO{sub 2} thickness at the interface is at least 2 nm for 90 min anodic bonding. • Silicon oxidation rate at the interface is 0.022 nm min{sup −1} from 30 to 90 min. - Abstract: The morphologies and structural details of formed silica at the interface of silicon-glass anodic bonding determine the stress at the interface but they have been rarely clarified. In this study, a miniaturized anodic bonding device was developed and coupled with a Raman spectrometer. The silicon-glass anodic bonding was carried out and the evolution of the stress at the bonding interface was measured in situ by a Raman spectrometer. In addition, large-scale atomistic simulations were conducted by considering the formed silica with different morphologies. The most conceivable silica morphology was identified as the corresponding silicon-glass interfacial stress presents qualitatively agreement with the experimental observation. It was found that amorphous SiO{sub 2} is the silica morphology generated in anodic bonding. The amorphous SiO{sub 2} thickness is at least 2 nm in the case of 90 min anodic bonding at 400 °C with the DC voltage of −1000 V. The combination of experimental and simulation results can ascertain the silicon oxidation reaction rate in anodic bonding process, and under the above-mentioned condition, the reaction rate was estimated as 0.022 nm min{sup −1} from 30 to 90 min.

  11. Rapid determination of trace amounts of fluorine in silicon nitride by instrumental neutron-activation analysis

    International Nuclear Information System (INIS)

    Yonezawa, Chushiro; Matsue, Hideaki; Kurosawa, Tatsuya

    1998-01-01

    The rapid determination of ppm levels of F in silicon nitride powder and some reference materials by instrumental neutron-activation analysis (INAA), measuring the short-lived nuclide 20 F (half life: 11.00 s), has been studied. The determination was carried out by single and cyclic activation methods using an activation analysis facility (PN-3) of the 20 MW reactor JRR-3M. Using this method, the sample was irradiated with a thermal neutron flux of 1.9 x 10 13 n cm -2 s -1 for 5 s, and the γ-ray spectrum was measured for 10 s after letting the sample stand for 7 s. In the cyclic-activation method, the single-activation method was repeated 5 times, including more than a 10 min cooling interval between each measurement. The effects of evaporating F during neutron irradiation and a side reaction due to 23 Na (n, α) 20 F were examined; it was confirmed that these effects can be neglected under the present experimental conditions. Due to the high Cd ratio of the irradiation field at PN-3, the effect of the side reaction from Na is 25- to 155-times lower than the values obtained by other reactors. The cyclic-activation method presents not only a lower detection limit, but also better analytical precision than the single-activation method. The analytical results of F in reference materials of Opal Glass (NIST SRM91) and Oyster Tissue (NIST SRM1566a) almost agreed within 5.1 to 5.9 % with the certified and reference values. The relationship between the detection limit of the F and Al contents was also clarified. (author)

  12. Thermal Response of Cooled Silicon Nitride Plate Due to Thermal Conductivity Effects Analyzed

    Science.gov (United States)

    Baaklini, George Y.; Abdul-Aziz, Ali; Bhatt, Ramakrishna

    2003-01-01

    Lightweight, strong, tough high-temperature materials are required to complement efficiency improvements for next-generation gas turbine engines that can operate with minimum cooling. Because of their low density, high-temperature strength, and high thermal conductivity, ceramics are being investigated as materials to replace the nickelbase superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass (ref. 1). To complement the effectiveness of the ceramics and their applicability for turbine engine applications, a parametric study using the finite element method is being carried out. The NASA Glenn Research Center remains very active in conducting and supporting a variety of research activities related to ceramic matrix composites through both experimental and analytical efforts (ref. 1). The objectives of this work are to develop manufacturing technology, develop a thermal and environmental barrier coating (TBC/EBC), develop an analytical modeling capability to predict thermomechanical stresses, and perform a minimal burner rig test on silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Moreover, we intend to generate a detailed database of the material s property characteristics and their effects on structural response. We expect to offer a wide range of data since the modeling will account for other variables, such as cooling channel geometry and spacing. Comprehensive analyses have begun on a plate specimen with Si3N4 cooling holes.

  13. Prototype of a silicon nitride ceramic-based miniplate osteofixation system for the midface.

    Science.gov (United States)

    Neumann, Andreas; Unkel, Claus; Werry, Christoph; Herborn, Christoh U; Maier, Horst R; Ragoss, Christian; Jahnke, Klaus

    2006-06-01

    The favorable properties of silicon nitride (Si3N4) ceramics, such as high mean strength level and fracture toughness, suggest biomedical use as an implant material. Minor reservations about the biocompatibility of Si3N4 ceramics were cleared up by previous in vitro and in vivo investigations. A Si3N4 prototype minifixation system was manufactured and implanted for osteosynthesis of artificial frontal bone defects in 3 minipigs. After 3 months, histological sections, computed tomography (CT) scans, and magnetic resonance imaging (MRI) scans were obtained. Finite element modeling (FEM) was used to simulate stresses and strains on Si3N4 miniplates and screws to calculate survival probabilities. Si3N4 miniplates and screws showed satisfying intraoperative workability. There was no implant loss, displacement, or fracture. Bone healing was complete in all animals. The formation of new bone was observed in direct contact to the implants. The implants showed no artifacts on CT and MRI scanning. FEM simulation confirmed the mechanical reliability of the screws, whereas simulated plate geometries regarding pullout forces at maximum load showed limited safety in a bending situation. Si3N4 ceramics show a good biocompatibility outcome both in vitro and in vivo. In ENT surgery, this ceramic may serve as a biomaterial for osteosynthesis (eg, of the midface including reconstruction the floor of the orbit and the skull base). To our knowledge, this is the first introduction of a ceramic-based miniplate-osteofixation system. Advantages compared with titanium are no risk of implantation to bone with mucosal attachment, no need for explantation, and no interference with radiologic imaging. Disadvantages include the impossibility of individual bending of the miniplates.

  14. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  15. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  16. N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band.

    Science.gov (United States)

    Bucio, Thalía Domínguez; Khokhar, Ali Z; Mashanovich, Goran Z; Gardes, Frederic Y

    2018-03-15

    We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n=1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Δλ=20  nm, BW 3 dB ∼11  nm, ILprocess that enables multilayer integration schemes due to its processing temperature <400°C.

  17. A Thermodynamic Model to Estimate the Formation of Complex Nitrides of Al x Mg(1-x)N in Silicon Steel

    Science.gov (United States)

    Luo, Yan; Zhang, Lifeng; Li, Ming; Sridhar, Seetharaman

    2018-03-01

    A complex nitride of Al x Mg(1-x)N was observed in silicon steels. A thermodynamic model was developed to predict the ferrite/nitride equilibrium in the Fe-Al-Mg-N alloy system, using published binary solubility products for stoichiometric phases. The model was used to estimate the solubility product of nitride compound, equilibrium ferrite, and nitride compositions, and the amounts of each phase, as a function of steel composition and temperature. In the current model, the molar ratio Al/(Al + Mg) in the complex nitride was great due to the low dissolved magnesium in steel. For a steel containing 0.52 wt pct Als, 10 ppm T.Mg., and 20 ppm T.N. at 1100 K (827 °C), the complex nitride was expressed by Al0.99496Mg0.00504N and the solubility product of this complex nitride was 2.95 × 10-7. In addition, the solution temperature of the complex nitride increased with increasing the nitrogen and aluminum in steel. The good agreement between the prediction and the detected precipitate compositions validated the current model.

  18. Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

    CERN Document Server

    Choi, W B; Lee Jae Sik; Sung, M Y

    2000-01-01

    The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

  19. Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities.

    Science.gov (United States)

    Shambat, Gary; Gong, Yiyang; Lu, Jesse; Yerci, Selçuk; Li, Rui; Dal Negro, Luca; Vucković, Jelena

    2010-03-15

    Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.

  20. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    Science.gov (United States)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  1. Evaluation of the Effect of Silicone Contamination on Various Bond Systems and the Feasibility of Removing the Contamination

    Science.gov (United States)

    Stanley, Stephanie D.

    2008-01-01

    Silicone is a contaminant that can cause catastrophic failure of a bond system depending on the materials and processes used to fabricate the bond system, Unfortunately, more and more materials are fabricated using silicone. The purpose of this testing was to evaluate which bond systems are sensitive to silicone contamination and whether or not a cleaning process could be utilized to remove the silicone to bring the bond system performance back to baseline. Due to the extensive nature of the testing attempts will be made to generalize the understanding within classes of substrates, bond systems, and surface preparation and cleaning methods. This study was done by contaminating various meta! (steel, inconel, and aluminum), phenolic (carbon cloth phenolic and glass cloth phenolic), and rubber (natural rubber, asbestos-silicone dioxide filled natural butyldiene rubber, silica-filled ethylene propylenediene monomer, and carbon-filled ethylene propylenediene monomer) substrates which were then bonded using various adhesives and coatings (epoxy-based adhesives, paints, ablative compounds, and Chemlok adhesives) to determine the effect silicone contamination has on a given bond system's performance. The test configurations depended on the bond system being evaluated. The study also evaluated the feasibility of removing the silicone contamination by cleaning the contaminated substrate prior to bonding. The cleaning processes also varied depending on bond system.

  2. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Directory of Open Access Journals (Sweden)

    Peng Dong

    2017-08-01

    Full Text Available Plasma-enhanced chemical vapor deposited silicon nitride (SiNx films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C–V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  3. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  4. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  5. Study of gluing and wire bonding for the Belle II Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Kang, K.H.; Hara, K.; Higuchi, T.; Hyun, H.J.; Jeon, H.B.; Joo, C.W.; Kah, D.H.; Kim, H.J.; Mibe, T.; Onuki, Y.; Park, H.; Rao, K.K.; Sato, N.; Shimizu, N.; Tanida, K.; Tsuboyama, T.; Uozumi, S.

    2014-01-01

    This paper describes an investigation into gluing and wire bonding for assembling the Silicon Vertex Detector (SVD) for the Belle II experiment at KEK in Japan. Optimizing the gluing of the silicon microstrip sensors, the support frame, and the readout flex cables is important for achieving the required mechanical precision. The wire bonding between the sensors and the readout electronic chips also needs special care to maximize the physics capability of the SVD. The silicon sensors and signal fan out flex circuits (pitch adapters) are glued and connected using wire bonding. We determine that gluing quality is important for achieving good bonding efficiency. The standard deviation in the glue thickness for the best result is measured to be 3.11 μm. Optimal machine parameters for wire bonding are determined to be 70 mW power, 20 gf force, and 20 ms for the pitch adapter and 60 mW power, 20 gf force, and 20 ms for the silicon strip sensors; these parameters provide a pull force of (10.92±0.72) gf. With these settings, 75% of the pitch adapters and 25% of the strip sensors experience the neck-broken type of break

  6. The combined effects of Fe and H2 on the nitridation of silicon

    Science.gov (United States)

    Shaw, N. J.

    1982-01-01

    In view of the support offered by previous work for the suggestion that Fe may affect alpha-Si3N4 formation and microstructural development, a two-part study was conducted to differentiate the effects of H2 and Fe in, first, the nitridation of pure and of Fe-containing powder in N2 and N2-4% H2, and then the nitridation of (1 1 1) Si single crystal wafers with and without Fe powder on the surface. The degree of nitridation is most strongly affected by H2 at 1200 C, but by Fe at 1375 C, where Fe-containing samples in either atmosphere were almost completely nitrided. While neither H2 nor Fe alone changed the ratio of alpha-Si3N4 to beta-Si3N4, the combination of H2 and Fe increased it at both temperatures.

  7. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  8. Effect of microstructure on the high temperature strength of nitride

    Indian Academy of Sciences (India)

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

  9. Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

    Science.gov (United States)

    Wang, Chenxi; Xu, Jikai; Zeng, Xiaorun; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

    2018-02-01

    We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a two-step wet chemical surface cleaning. After a post-annealing at 200 °C, strong bonding interfaces with no defects or microcracks were obtained. On the basis of the detailed surface and bonding interface characterizations, the bonding mechanism was explored and discussed. The amino groups terminated on the cleaned surfaces might contribute to the bonding strength enhancement during the annealing. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring a vacuum system.

  10. Processing and performance of reactively sputtered titanium silicon nitride liners in copper metallization

    Science.gov (United States)

    Mirza, Jawid Majid

    Titanium silicon nitride (TiSiN) is a potential candidate for diffusion barrier applications in the advanced copper metallization schemes. This thesis focuses on the process development and optimization of reactively sputtered TiSiN films using statistically valid "design of experiment" (DOE) approach and testing the copper diffusion performance of TiSiN films. The design of experiment (DOE) approach showed that the nitrogen and DC target power had the most influence over the composition and resistivity of reactively sputtered TiSiN films. Thermal diffusion barrier performance of reactively sputtered TiSiN films against copper diffusion was tested as a function of the composition of reactively sputtered TiSiN films. Rutherford backscattering spectrometry (RBS) analysis of Cu (100 nm)/TiSiN (10 nm)/Si stacks annealed at 400°C temperatures indicated that TiSiN films deposited by physical vapor deposition (PVD) technique withstood this thermal treatment for 30 minutes. The situation was drastically changed when the Cu (100 nm)/TiSiN (10 nm)/Si film stacks were annealed at 500°C or higher temperatures for 30 minutes. All of the PVD TiSiN films tested (independent of their composition) showed copper diffusion through the barrier as detected by RBS. Secco etch method was used to confirm the findings of RBS studies. It was found that the PVD TiSiN films with at least 5--10 atomic percent of nitrogen acted as a good diffusion barrier against thermal diffusion of copper 400°C for 30 minutes anneal. However, 10 nm thick PVD TiSi film failed, even at a temperature 400°C for 30 minutes anneal. All of the PVD TiSiN films (independent of composition) annealed at 500°C or higher temperatures for 30 minutes, showed Secco etch pits in the silicon substrate. These etch pits indicate copper diffusion through the liner material. Thus nitrogen concentration of at least 5--10 atomic percent improved the barrier stability of reactively sputtered TiSiN films, as determined by Secco

  11. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Luo, Haoze; Iannuzzo, Francesco

    2017-01-01

    the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect...

  12. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  13. Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

    Energy Technology Data Exchange (ETDEWEB)

    Patrocinio, Weslley S., E-mail: weslley.patrocinio@gmail.com [Nanotechnology Group, Wernher von Braun Center for Advanced Research, Campinas, SP (Brazil); Ribeiro, Mauro, E-mail: ribeiro@vonbraunlabs.com.br [Nanotechnology Group, Wernher von Braun Center for Advanced Research, Campinas, SP (Brazil); Fonseca, Leonardo R.C., E-mail: fonseca@vonbraunlabs.com.br [Nanotechnology Group, Wernher von Braun Center for Advanced Research, Campinas, SP (Brazil)

    2012-09-20

    Silicon nitride, with a permittivity mid-way between SiO{sub 2} and common high-k materials such as HfO{sub 2}, is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO{sub 2}. It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN{sub x}. Indeed, for the amorphous phase the band gap was measured in the range 5.1-5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the {beta} phase of stoichiometric silicon nitride ({beta}-Si{sub 3}N{sub 4}) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN{sub x} band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN{sub x}, as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

  14. Exchange of bonded hydrogen in amorphous silicon by deuterium

    International Nuclear Information System (INIS)

    Abeles, B.; Yang, L.; Leta, D.P.; Majkrazak, C.

    1987-01-01

    The authors show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D, H exchange, 10 -14 cm 2 /sec at 160 0 C, is comparable to that of interstitial hydrogen in c-Si

  15. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  16. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  17. First-principles study of bonding mechanisms in the series of Ti, V, Cr, Mo, and their carbides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Zaoui, A. [Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 24 med bouzidi, 22000 Sidi Bel-Abbes (Algeria)]. E-mail: ali_zaoui@yahoo.fr; Kacimi, S. [Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 24 med bouzidi, 22000 Sidi Bel-Abbes (Algeria); Bouhafs, B. [Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 24 med bouzidi, 22000 Sidi Bel-Abbes (Algeria); Roula, A. [Laboratoire d' etude sur les interactions materiaux-environnements, Universite de Jijel, 18000 Jijel, Algerie (Algeria)

    2005-04-15

    The electronic structure and chemical bonding mechanism in the series of transition metals, those formed with 3d metals (Ti, V, Cr), and 4d metal (Mo), and their carbides and nitrides in the rocksalt structure are studied by means of a first-principles full potential linearized augmented plane waves method within the local density approximation (LDA). Results are given for lattice constant, bulk modulus, charge density and total and partial density of states. Our calculations demonstrate that increasing the number of valence d electrons in the core lead to larger (B) and the relativistic effects on the structural and electronic properties of MoC and MoN, if qualitatively not unexpected, are, however, surprisingly large, despite the relatively light atoms (C and N)

  18. Performance of Chevron-notch short bar specimen in determining the fracture toughness of silicon nitride and aluminum oxide

    Science.gov (United States)

    Munz, D.; Bubsey, R. T.; Shannon, J. L., Jr.

    1980-01-01

    Ease of preparation and testing are advantages unique to the chevron-notch specimen used for the determination of the plane strain fracture toughness of extremely brittle materials. During testing, a crack develops at the notch tip and extends stably as the load is increased. For a given specimen and notch configuration, maximum load always occurs at the same relative crack length independent of the material. Fracture toughness is determined from the maximum load with no need for crack length measurement. Chevron notch acuity is relatively unimportant since a crack is produced during specimen loading. In this paper, the authors use their previously determined stress intensity factor relationship for the chevron-notch short bar specimen to examine the performance of that specimen in determining the plane strain fracture toughness of silicon nitride and aluminum oxide.

  19. Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

    International Nuclear Information System (INIS)

    Matsumoto, M.; Inayoshi, Y.; Suemitsu, M.; Miyamoto, E.; Yara, T.; Nakajima, S.; Uehara, T.; Toyoshima, Y.

    2008-01-01

    Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 deg. C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma

  20. Effect of different surface treatments on tensile bond strength of silicone-based soft denture liner.

    Science.gov (United States)

    Akin, Hakan; Tugut, Faik; Mutaf, Burcu; Akin, Gulsah; Ozdemir, A Kemal

    2011-11-01

    Failure of the bond between the acrylic resin and resilient liner material is commonly encountered in clinical practice. The purpose of this study was to investigate the effect of different surface treatments (sandblasting, Er:YAG, Nd:YAG, and KTP lasers) on tensile bond strength of silicone-based soft denture liner. Polymethyl methacrylate test specimens were fabricated and each received one of eight surface treatments: untreated (control), sandblasted, Er:YAG laser irradiated, sandblasted + Er:YAG laser irradiated, Nd:YAG laser irradiated, sandblasted + Nd:YAG laser irradiated, KTP laser irradiated, and sandblasted + KTP laser irradiated. The resilient liner specimens (n = 15) were processed between two polymethyl methacrylate (PMMA) blocks. Bonding strength of the liners to PMMA were compared by tensile test with the use of a universal testing machine at a crosshead speed of 5 mm/min. Kruskal-Wallis and Wilcoxon tests were used to analyze the data (α = 0.05). Altering the polymethyl methacrylate surface by Er:YAG laser significantly increased the bond strengths in polymethyl methacrylate/silicone specimens, however, sandblasting before applying a lining material had a weakening effect on the bond. In addition, Nd:YAG and KTP lasers were found to be ineffective for increasing the strength of the bond.

  1. Optical pressure sensor head fabrication using ultrathin silicon wafer anodic bonding

    Science.gov (United States)

    Beggans, Michael H.; Ivanov, Dentcho I.; Fu, Steven G.; Digges, Thomas G., III; Farmer, Kenneth R.

    1999-03-01

    A technology for fabricating fiber optically interrogated pressure sensors is described. This technology is based on anodic bonding of ultra-thin silicon wafers to patterned, micro-machined glass wafers, providing low-cost fabrication of optical pressure sensor heads that operate with reproducible technical characteristics in various dynamic ranges. Pressure sensors using 10, 20 and 50 micron thick silicon wafers for membranes have been fabricated on 10 cm diameter, 500-micron thick, Pyrex glass wafers. The glass wafers have been micro-machined using ultrasonic drilling in order to form cavities, optical fiber feedthrough holes and vent holes. One of the main challenges of the manufacturing process is the handling of the ultra-thin silicon wafers. Being extremely flexible, the thin silicon wafers cannot be cleaned, oxidized, or dried in the same way as normal since wafers with a thickness of the order of 400 microns. Specific handling techniques have been developed in order to achieve reproducible cleaning and oxidation processes. The anodic bonding was performed using an Electronic Visions EV501S bonder. The wafers were heated at 420 degrees C and a voltage of 1200 volts was applied in vacuum of 10-5 Torr. The bonded wafer stack was then fixed in a wax and diced. The resulting chips have been used to fabricate operating pressure sensors.

  2. Hard carbon nitride and method for preparing same

    Science.gov (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  3. Chemical bonding in carbonitride nanolayers

    Science.gov (United States)

    Hoffmann, P.; Baake, O.; Beckhoff, B.; Ensinger, W.; Fainer, N.; Klein, A.; Kosinova, M.; Pollakowski, B.; Trunova, V.; Ulm, G.; Weser, J.

    2007-05-01

    First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BC xN y) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiC xN y) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B 4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si 3N 4).

  4. A quality quantitative method of silicon direct bonding based on wavelet image analysis

    Science.gov (United States)

    Tan, Xiao; Tao, Zhi; Li, Haiwang; Xu, Tiantong; Yu, Mingxing

    2018-04-01

    The rapid development of MEMS (micro-electro-mechanical systems) has received significant attention from researchers in various fields and subjects. In particular, the MEMS fabrication process is elaborate and, as such, has been the focus of extensive research inquiries. However, in MEMS fabrication, component bonding is difficult to achieve and requires a complex approach. Thus, improvements in bonding quality are relatively important objectives. A higher quality bond can only be achieved with improved measurement and testing capabilities. In particular, the traditional testing methods mainly include infrared testing, tensile testing, and strength testing, despite the fact that using these methods to measure bond quality often results in low efficiency or destructive analysis. Therefore, this paper focuses on the development of a precise, nondestructive visual testing method based on wavelet image analysis that is shown to be highly effective in practice. The process of wavelet image analysis includes wavelet image denoising, wavelet image enhancement, and contrast enhancement, and as an end result, can display an image with low background noise. In addition, because the wavelet analysis software was developed with MATLAB, it can reveal the bonding boundaries and bonding rates to precisely indicate the bond quality at all locations on the wafer. This work also presents a set of orthogonal experiments that consist of three prebonding factors, the prebonding temperature, the positive pressure value and the prebonding time, which are used to analyze the prebonding quality. This method was used to quantify the quality of silicon-to-silicon wafer bonding, yielding standard treatment quantities that could be practical for large-scale use.

  5. An Experimental Investigation of Silicone-to-Metal Bond Strength in Composite Space Docking System Seals

    Science.gov (United States)

    Gaier, James R.; Siamidis, John; Larkin, Elizabeth M. G.

    2010-01-01

    The National Aeronautics and Space Administration (NASA) is currently developing a new universal docking mechanism for future space exploration missions called the Low Impact Docking System (LIDS). A candidate LIDS main interface seal design is a composite assembly of silicone elastomer seals vacuum molded into grooves in an electroless nickel plated aluminum retainer. The strength of the silicone-tometal bond is a critical consideration for the new system, especially due to the presence of small areas of disbond created during the molding process. In the work presented herein, seal-to-retainer bonds of subscale seal specimens with different sizes of intentional disbond were destructively tensile tested. Nominal specimens without intentional disbonds were also tested. Tension was applied either uniformly on the entire seal circumference or locally in one short circumferential length. Bond failure due to uniform tension produced a wide scatter of observable failure modes and measured load-displacement behaviors. Although the preferable failure mode for the seal-to-retainer bond is cohesive failure of the elastomer material, the dominant observed failure mode under the uniform loading condition was found to be the less desirable adhesive failure of the bond in question. The uniform tension case results did not show a correlation between disbond size and bond strength. Localized tension was found to produce failure either as immediate tearing of the elastomer material outside the bond region or as complete peel-out of the seal in one piece. The obtained results represent a valuable benchmark for comparison in the future between adhesion loads under various separation conditions and composite seal bond strength.

  6. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  7. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

    Science.gov (United States)

    Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

    2018-02-01

    AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

  8. Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

    2018-03-02

    We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

  9. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  10. Failure behaviour of silicone adhesive in bonded connections with simple geometry

    OpenAIRE

    Staudt, Yves; Odenbreit, Christoph; Schneider, Jens

    2018-01-01

    In façade structures, adhesively bonded connections between glass panels and metallic substructures represent an attractive alternative to mechanical fixation devices. Apart from positive aspects regarding the construction's energy efficiency and aesthetics, the uniform load transfer reduces stress concentrations in the adherends, which is beneficial especially regarding brittle materials like glass. Structural silicone sealants are generally used for these kind of applications due to their e...

  11. In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

    Directory of Open Access Journals (Sweden)

    Fabio Lupo

    2014-11-01

    Full Text Available Free 4-undecenoxyphthalocyanine molecules were covalently bonded to Si(100 and porous silicon through thermic hydrosilylation of the terminal double bonds of the undecenyl chains. The success of the anchoring strategy on both surfaces was demonstrated by the combination of X-ray photoelectron spectroscopy with control experiments performed adopting the commercially available 2,3,9,10,16,17,23,24-octakis(octyloxy-29H,31H-phthalocyanine, which is not suited for silicon anchoring. Moreover, the study of the shape of the XPS N 1s band gave relevant information on the interactions occurring between the anchored molecules and the substrates. The spectra suggest that the phthalocyanine ring interacts significantly with the flat Si surface, whilst ring–surface interactions are less relevant on porous Si. The surface-bonded molecules were then metalated in situ with Co by using wet chemistry. The efficiency of the metalation process was evaluated by XPS measurements and, in particular, on porous silicon, the complexation of cobalt was confirmed by the disappearance in the FTIR spectra of the band at 3290 cm−1 due to –NH stretches. Finally, XPS results revealed that the different surface–phthalocyanine interactions observed for flat and porous substrates affect the efficiency of the in situ metalation process.

  12. Interface bonding in silicon oxide nanocontacts: interaction potentials and force measurements

    Science.gov (United States)

    Wierez-Kien, M.; Craciun, A. D.; Pinon, A. V.; Le Roux, S.; Gallani, J. L.; Rastei, M. V.

    2018-04-01

    The interface bonding between two silicon-oxide nanoscale surfaces has been studied as a function of atomic nature and size of contacting asperities. The binding forces obtained using various interaction potentials are compared with experimental force curves measured in vacuum with an atomic force microscope. In the limit of small nanocontacts (typically measured with sensitive probes the bonding is found to be influenced by thermal-induced fluctuations. Using interface interactions described by Morse, embedded atom model, or Lennard-Jones potential within reaction rate theory, we investigate three bonding types of covalent and van der Waals nature. The comparison of numerical and experimental results reveals that a Lennard-Jones-like potential originating from van der Waals interactions captures the binding characteristics of dry silicon oxide nanocontacts, and likely of other nanoscale materials adsorbed on silicon oxide surfaces. The analyses reveal the importance of the dispersive surface energy and of the effective contact area which is altered by stretching speeds. The mean unbinding force is found to decrease as the contact spends time in the attractive regime. This contact weakening is featured by a negative aging coefficient which broadens and shifts the thermal-induced force distribution at low stretching speeds.

  13. Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

    International Nuclear Information System (INIS)

    Saitoh, Y.; Takeuchi, H.; Mandai, M.; Kanazawa, H.; Yamanaka, J.; Miyahara, S.; Kamiya, M.; Fujita, Y.; Higashi, Y.; Ikeda, H.; Ikeda, M.; Koike, S.; Matsuda, T.; Ozaki, H.; Tanaka, M.; Tsuboyama, T.; Avrillon, S.; Okuno, S.; Haba, J.; Hanai, H.; Mori, S.; Yusa, K.; Fukunaga, C.

    1994-01-01

    Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit. (orig.)

  14. Comparison between transient and frequency modulated excitation: application to silicon nitride and aluminum oxide coatings of silicon.

    Science.gov (United States)

    Klein, D; Ohm, W; Fengler, S; Kunst, M

    2014-06-01

    Contactless measurements of the lifetime of charge carriers are presented with varying ways of photo excitation: with and without bias light and pulsed and frequency modulated. These methods are applied to the study of the surface passivation of single crystalline silicon by a-SiN(x):H and Al2O3 coatings. The properties of these coatings are investigated under consideration of the merits of the different methods.

  15. Dielectric properties of silicon aluminium oxides and boron nitride during heating to 2300 deg K

    International Nuclear Information System (INIS)

    Litovchenko, A.V.; Brekhovskikh, S.M.; Dem'yanov, V.V.

    1983-01-01

    Temperature dependences of permittivity and tangent of the angle of dielectric losses of melted quartz, alumooxide and nitride-boron ceramics at the frequency of approximately 10 10 Hz in the range from 300 to 2300 K, are obtained. Lambda-shape anomaly E(T) and tg delta(T) of quartz glass at approximately 1950 k with characteristic decrease E and tg delta in the liquid phase is established. The applicability of the resonator method (using graphite resonator) of measuring dielectric properties when heating samples at the temperature up to 2300 K, is shown

  16. TEM Analysis of Interfaces in Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers

    Science.gov (United States)

    Ozaki, T.; Tsuda, H.; Halbig, M. C.; Singh, M.; Hasegawa, Y.; Mori, S.; Asthana R.

    2016-01-01

    Silicon Carbide (SiC) is a promising material for thermo-structural applications due to its excellent high-temperature mechanical properties, oxidation resistance, and thermal stability. However, joining and integration technologies are indispensable for this material in order to fabricate large size and complex shape components with desired functionalities. Although diffusion bonding techniques using metallic interlayers have been commonly utilized to bond various SiC ceramics, detailed microstructural observation by Transmission Electron Microscopy (TEM) of the bonded area has not been carried out due to difficulty in preparing TEM samples. In this study, we tried to prepare TEM samples from joints of diffusion bonded SiC ceramics by Focused Ion Beam (FIB) system and carefully investigated the interfacial microstructure by TEM analysis. The samples used in this study were SiC fiber bonded ceramics (SA-Tyrannohex: SA-THX) diffusion bonded with metallic interlayers such as Ti, TiMo, and Mo-B. In this presentation, the result of microstructural analysis obtained by TEM observations and the influence of metallic interlayers and fiber orientation of SA-THX on the joint microstructure will be discussed.

  17. Mechanical Properties of Microelectronics Thin Films: Silicon Nitride (Si3N4)

    Science.gov (United States)

    1989-10-01

    for manual construction of 3-D solid models, graphical display, and interfacing with FEM packages (we are usirng ABAQUS ). The 3-D solid atodel resides...29] T.F R.-tajczyck, Jr. arnd A K. Sinha, ś’lastic Stiffness and Thernial Expansion1 Coefficients of Various Refractory Silicuiies and Silicon

  18. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    Energy Technology Data Exchange (ETDEWEB)

    Kang, K.H.; Jeon, H.B. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Park, H., E-mail: sunshine@knu.ac.kr [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Uozumi, S. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); and others

    2016-09-21

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

  19. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    International Nuclear Information System (INIS)

    Kang, K.H.; Jeon, H.B.; Park, H.; Uozumi, S.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A.K.; Batignani, G.; Bauer, A.; Behera, P.K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.

    2016-01-01

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

  20. Improvement of efficiency in graphene/gallium nitride nanowire on Silicon photoelectrode for overall water splitting

    Science.gov (United States)

    Bae, Hyojung; Rho, Hokyun; Min, Jung-Wook; Lee, Yong-Tak; Lee, Sang Hyun; Fujii, Katsushi; Lee, Hyo-Jong; Ha, Jun-Seok

    2017-11-01

    Gallium nitride (GaN) nanowires are one of the most promising photoelectrode materials due to their high stability in acidic and basic electrolytes, and tunable band edge potentials. In this study, GaN nanowire arrays (GaN NWs) were prepared by molecular beam epitaxy (MBE); their large surface area enhanced the solar to hydrogen conversion efficiency. More significantly, graphene was grown by chemical vapor deposition (CVD), which enhanced the electron transfer between NWs for water splitting and protected the GaN NW surface. Structural characterizations of the prepared composite were performed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photocurrent density of Gr/GaN NWs exhibited a two-fold increase over pristine GaN NWs and sustained water splitting up to 70 min. These improvements may accelerate possible applications for hydrogen generation with high solar to hydrogen conversion efficiency.

  1. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  2. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    International Nuclear Information System (INIS)

    Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi 2

  3. Reprint of: Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-11-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. Copyright © 2010 Elsevier Inc. All rights reserved.

  4. DNA Physical Mapping via the Controlled Translocation of Single Molecules through a 5-10nm Silicon Nitride Nanopore

    Science.gov (United States)

    Stein, Derek; Reisner, Walter; Jiang, Zhijun; Hagerty, Nick; Wood, Charles; Chan, Jason

    2009-03-01

    The ability to map the binding position of sequence-specific markers, including transcription-factors, protein-nucleic acids (PNAs) or deactivated restriction enzymes, along a single DNA molecule in a nanofluidic device would be of key importance for the life-sciences. Such markers could give an indication of the active genes at particular stage in a cell's transcriptional cycle, pinpoint the location of mutations or even provide a DNA barcode that could aid in genomics applications. We have developed a setup consisting of a 5-10 nm nanopore in a 20nm thick silicon nitride film coupled to an optical tweezer setup. The translocation of DNA across the nanopore can be detected via blockades in the electrical current through the pore. By anchoring one end of the translocating DNA to an optically trapped microsphere, we hope to stretch out the molecule in the nanopore and control the translocation speed, enabling us to slowly scan across the genome and detect changes in the baseline current due to the presence of bound markers.

  5. Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization

    Directory of Open Access Journals (Sweden)

    U. Hashim

    2013-01-01

    Full Text Available The fabrication of ion sensitive field-effect transistor (ISFET using silicon nitride (Si3N4 as the sensing membrane for pH measurement and DNA is reported. For the pH measurement, the Ag/AgCl electrode was used as the reference electrode, and different pH values of buffer solution were used in the ISFET analysis. The ISFET device was tested with pH buffer solutions of pH2, pH3, pH7, pH8, and pH9. The results show that the IV characteristic of ISFET devices is directly proportional and the device’s sensitivity was 43.13 mV/pH. The ISFET is modified chemically to allow the integration with biological element to form a biologically active field-effect transistor (BIOFET. It was found that the DNA immobilization activities which occurred on the sensing membrane caused the drain current to drop due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The drain current was further decreased when the DNA hybridization took place.

  6. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  7. Effect of Primary Recrystallized Microstructure and Nitriding on Secondary Recrystallization in Grain Oriented Silicon Steel by Low Temperature Slab Reheating

    Directory of Open Access Journals (Sweden)

    LIU Gong-tao

    2018-01-01

    Full Text Available Different primary recrystallized grain sizes were obtained by controlling decarburization process in grain oriented silicon steel produced by low temperature slab reheating technique. The effect of primary grain size on secondary recrystallization and magnetic properties was studied. The appropriate nitrogen content after nitriding was explored in case of very large primary grain size, and the effect of {411}〈148〉 primary recrystallized texture on the abnormal growth behavior was discussed. The results show that an increase in average primary grain size from 10μm to 15μm leads to an increase of secondary recrystallization temperature and a sharper Goss texture with higher magnetic permeability, in the condition of a very large average primary grain size of 28μm, the suitable amount of nitrogen increases to about 6×10-4. The {411}〈148〉 oriented grains in primary recrystallized microstructure can easily grow into larger sizes due to their size advantage, and thus hinder the abnormal growth of secondary grains, moreover, the hindering effect is more pronounced in the abnormal growth of Brass-oriented grains due to their misorientation with low migration rate other than Goss grains.

  8. Energy transfer phenomena and radiative processes in silicon nitride based materials for on-chip photonics applications

    Science.gov (United States)

    Li, Rui

    Rare-earth (RE) doping of silicon-based structures provides a valuable approach for light-emitting devices which could be monolithically integrated atop the widespread silicon electronics platform and enables inexpensive integration of on-chip optical components. However, the small excitable fraction of RE ions and the substantial free carrier losses in Si nanostructures severely limit the possibility to achieve net optical gain using traditional Er doped materials, such as Er doped Si-rich oxides (Er:SRO). On the other hand, a novel material platform based on RE-doped silicon nitride (RE:Six) materials has recently revealed unique advantages for on-chip light source. Based on a variety of light emission spectroscopic techniques and rate equation modeling, light emission and energy transfer phenomena were studied to quantitatively assess the benefits of the novel Er and Nd doped SiNx (Er: SiN x and Nd:SiNx) material platform compared to the standard Er:SRO. Efficient energy transfer and nanosecond-time dynamics from SiN x matrices to RE ions with two orders of magnitude larger coupling coefficient than Er:SRO were demonstrated for the first time. The origin of this energy transfer was shown to consist of non-resonant phonon-mediated coupling by temperature-dependent experiments. In addition, a tradeoff between excitation efficiency by energy transfer and emission efficiency, determined by excess Si concentration, was discovered and studied. Although carrier absorption and non-radiative recombination jeopardize the observation of optical gain, differential loss measurements under femtosecond pulsed excitation resulted in the bleaching of the Er ground state absorption by energy transfer in Er:SiN x materials, which bears great hope for the engineering of Si-based lasers. On the other hand, with a superior 4-level system, Nd:SiNx is promising to lase with a lower threshold. To make use of the better field confinement in SiNx due to its higher refractive index, RE

  9. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  10. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    Directory of Open Access Journals (Sweden)

    Nick Baker

    2017-03-01

    Full Text Available In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs, it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

  11. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

    Science.gov (United States)

    Wierer, Jonathan J., Jr.; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Vawter, Gregory A.; Montaño, Ines

    2015-06-01

    Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

  12. Bulk-wave and guided-wave photoacoustic evaluation of the mechanical properties of aluminum/silicon nitride double-layer thin films.

    Science.gov (United States)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M

    2006-12-01

    The development of devices made of micro- and nano-structured thin film materials has resulted in the need for advanced measurement techniques to characterize their mechanical properties. Photoacoustic techniques, which use pulsed laser irradiation to nondestructively induce very high frequency ultrasound in a test object via rapid thermal expansion, are suitable for nondestructive and non-contact evaluation of thin films. In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. The elastic properties and residual stresses in such films affect their mechanical performance. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. The measured transient signals are compared with simulated transient thermoelastic signals in multi-layer structures, and the elastic moduli are determined. Independent pump-probe tests on silicon substrate-supported region and unsupported region are in good agreement. In a second set of experiments, dispersion curves of the A(0) mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made and discussed.

  13. Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

    Science.gov (United States)

    Liao, Bo-Huei; Hsiao, Chien-Nan

    2014-02-01

    Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

  14. Dynamic behavior of hydrogen in silicon nitride and oxynitride films made by low-pressure chemical vapor deposition

    Science.gov (United States)

    Arnoldbik, W. M.; Marée, C. H. M.; Maas, A. J. H.; van den Boogaard, M. J.; Habraken, F. H. P. M.; Kuiper, A. E. T.

    1993-08-01

    The diffusion and reactivity of hydrogen, incorporated in silicon oxynitride films during low-pressure chemical vapor deposition (LPCVD) at 800 °C, has been studied using elastic recoil detection and infrared spectroscopy for temperatures ranging from 700 to 1000 °C. The experiments are based on the determination of the hydrogen and deuterium depth profiles in layer structures in which H and D have been incorporated in different layers. This was achieved in two ways. Double layers have been produced directly during deposition or through exchange of incorporated hydrogen with gas-phase deuterium. The diffusion coefficient of hydrogen (or deuterium) is in the range between 3×1018 and 1×10-13 cm2/s, at temperatures between 700 and 1000 °C, and is characterized by a single activation energy of 3 eV, for [O]/([O]+[N]) values up to 0.45. The diffusion coefficient and hence the rate of the exchange of incorporated hydrogen and gas-phase deuterium increases with [O]/([O]+[N]) in the oxynitrides for [O]/([O]+[N]) >0.3. As a result we propose a model in which the rate-limiting step in the process of the diffusion of hydrogen in the LPCVD oxynitrides is the breaking of N-H bonds. Subsequent to the bond breaking, the hydrogen atom becomes trapped in a nitrogen-related trapping site or exchanges with a nitrogen-bonded hydrogen (deuterium) atom. If the bond breaking occurs within a distance of about 10 nm from the immediate surface, the hydrogen atom is able to desorb into the gas phase. A SiO2 capping layer is not able to prevent the desorption.

  15. Efficient and Stable CsPbBr3 Quantum-Dot Powders Passivated and Encapsulated with a Mixed Silicon Nitride and Silicon Oxide Inorganic Polymer Matrix.

    Science.gov (United States)

    Yoon, Hee Chang; Lee, Soyoung; Song, Jae Kyu; Yang, Heesun; Do, Young Rag

    2018-04-11

    Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX 3 ) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr 3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiN x /SiN x O y /SiO y passivated and encapsulated CsPbBr 3 /PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr 3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiN x , SiN x O y , and SiO y liganded to the surfaces of the CsPbBr 3 QDs to optimize the PLQY and the stability of CsPbBr 3 /PSZ core/shell composite, which shows a high PLQY (∼81.7%) with improved thermal, photo, air, and humidity stability as well under coarse conditions where the performance of CsPbBr 3 QDs typically deteriorate. To evaluate the suitability of the application of the CsPbBr 3 /PSZ powder to down-converted white-light-emitting diodes (DC-WLEDs) as the backlight of a liquid crystal display (LCD), we fabricated an on-package type of tricolor-WLED by mixing the as-synthesized green CsPbBr 3 /PSZ composite powder with red K 2 SiF 6 :Mn 4+ phosphor powder and a poly(methyl methacrylate)-encapsulating binder and coating this mixed paste onto a cup-type blue LED. The fabricated WLED show high luminous efficacy of 138.6 lm/W (EQE = 51.4%) and a wide color gamut of 128% and 111% without and with color filters, respectively, at a correlated color temperature of 6762 K.

  16. Porous silicon nitride spacers versus PEEK cages for anterior cervical discectomy and fusion: clinical and radiological results of a single-blinded randomized controlled trial.

    Science.gov (United States)

    Arts, Mark P; Wolfs, Jasper F C; Corbin, Terry P

    2017-04-05

    Anterior cervical discectomy with fusion is a common procedure for treating radicular arm pain. Polyetheretherketone (PEEK) plastic is a frequently used material in cages for interbody fusion. Silicon nitride is a new alternative with desirable bone compatibility and imaging characteristics. The aim of the present study is to compare silicon nitride implants with PEEK cages filled with autograft harvested from osteophytes. The study is a prospective, randomized, blinded study of 100 patients with 2 years follow-up. The primary outcome measure was improvement in the Neck Disability Index. Other outcome measures included SF-36, VAS arm pain, VAS neck pain, assessment of recovery, operative characteristics, complications, fusion and subsidence based on dynamic X-ray and CT scan. There was no significant difference in NDI scores between the groups at 24 months follow-up. At 3 and 12 months the NDI scores were in favor of PEEK although the differences were not clinically relevant. On most follow-up moments there was no difference in VAS neck and VAS arm between both groups, and there was no statistically significant difference in patients' perceived recovery during follow-up. Fusion rate and subsidence were similar for the two study arms and about 90% of the implants were fused at 24 months. Patients treated with silicon nitride and PEEK reported similar recovery rates during follow-up. There was no significant difference in clinical outcome at 24 months. Fusion rates improved over time and are comparable between both groups.

  17. Effect of boron nitride coating on fiber-matrix interactions

    International Nuclear Information System (INIS)

    Singh, R.N.; Brun, M.K.

    1987-01-01

    Coatings can modify fiber-matrix reactions and consequently interfacial bond strengths. Commercially available mullite, silicon carbide, and carbon fibers were coated with boron nitride via low pressure chemical vapor deposition and incorporated into a mullite matrix by hot-pressing. The influence of fiber-matrix interactions for uncoated fibers on fracture morphologies was studied. These observations are related to the measured values of interfacial shear strengths

  18. Specific Neuron Placement on Gold and Silicon Nitride-Patterned Substrates through a Two-Step Functionalization Method.

    Science.gov (United States)

    Mescola, Andrea; Canale, Claudio; Prato, Mirko; Diaspro, Alberto; Berdondini, Luca; Maccione, Alessandro; Dante, Silvia

    2016-06-28

    The control of neuron-substrate adhesion has been always a challenge for fabricating neuron-based cell chips and in particular for multielectrode array (MEA) devices, which warrants the investigation of the electrophysiological activity of neuronal networks. The recent introduction of high-density chips based on the complementary metal oxide semiconductor (CMOS) technology, integrating thousands of electrodes, improved the possibility to sense large networks and raised the challenge to develop newly adapted functionalization techniques to further increase neuron electrode localization to avoid the positioning of cells out of the recording area. Here, we present a simple and straightforward chemical functionalization method that leads to the precise and exclusive positioning of the neural cell bodies onto modified electrodes and inhibits, at the same time, cellular adhesion in the surrounding insulator areas. Different from other approaches, this technique does not require any adhesion molecule as well as complex patterning technique such as μ-contact printing. The functionalization was first optimized on gold (Au) and silicon nitride (Si3N4)-patterned surfaces. The procedure consisted of the introduction of a passivating layer of hydrophobic silane molecules (propyltriethoxysilane [PTES]) followed by a treatment of the Au surface using 11-amino-1-undecanethiol hydrochloride (AT). On model substrates, well-ordered neural networks and an optimal coupling between a single neuron and single micrometric functionalized Au surface were achieved. In addition, we presented the preliminary results of this functionalization method directly applied on a CMOS-MEA: the electrical spontaneous spiking and bursting activities of the network recorded for up to 4 weeks demonstrate an excellent and stable neural adhesion and functional behavior comparable with what expected using a standard adhesion factor, such as polylysine or laminin, thus demonstrating that this procedure can be

  19. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  20. Effect of maleic anhydride pretreatment on tensile bond strength of a silicone soft liner to a denture base polymer.

    Science.gov (United States)

    Demir, Hakan; Soygun, Koray; Dogan, Arife; Keskin, Selda; Dogan, Orhan Murat; Bolayir, Giray

    2011-10-01

    To determine the effect of resin surface treatment with dissolved maleic anhydride in butanone added into primer on the tensile bond strength between an acrylic denture base resin and a silicone soft liner. To test tensile bond strength, standard dumbbell-shaped acrylic specimens were prepared. Five experimental groups, including the control, were tested (n = 5). Maleic anhydride solutions prepared in butanone at concentrations of 1%, 5%, 10% or 20% were then mixed with 1 ml of Primo adhesive and the mixtures were applied onto the resin bonding surfaces. Silicone liner material was applied to resin surfaces in the conventional manner. Tensile bond strength of the specimens was measured in a universal testing machine. Fractured surfaces were observed under the scanning electron microscope, and resulting chemical changes with the solutions used were analyzed spectroscopically. The highest bond strength value was obtained for the group treated with 5% maleic anhydride (2.53 ± 0.48 MPa); the lowest value was for the group treated with 20% maleic anhydride (1.59 ± 0.29 MPa). Mixed failure was the dominant type seen in the experimental groups. Spectroscopic analysis showed the interaction of the anhydride carbonyl groups with the Primo primer. The treatment of resin surfaces with maleic anhydride added to Primo adhesive effectively increased bond strength between silicone soft liner and denture base resin.

  1. PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

    Directory of Open Access Journals (Sweden)

    Natalita M. Nursam

    2010-01-01

    Full Text Available The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-SiN:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45 GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge density. Our results show that the application of negative charge causes a substantial reduction in the surface recombination of samples with boron diffused emitters, even for high boron surface concentrations of 5×1019 cm−3. The significant difference observed in surface recombination between boron diffused and undiffused sample under accumulation implies that the presence of boron diffusion has results in some degradation of the Si-SiN interface. Further, (111 oriented surfaces appear more sensitive to the boron surface concentration than (100 oriented surfaces.

  2. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  3. Optical and structural characterization of silicon-carbon-nitride thin films for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Swatowska, Barbara; Stapinski, Tomasz [Department of Electronics, AGH University of Science and Technology, Krakow (Poland)

    2010-04-15

    Amorphous a-SiCN:H films were deposited by radio frequency Plasma Enhanced Chemical Vapour Deposition (PECVD) at 13.56 MHz from silane-methane-ammonia (SiH{sub 4}+CH{sub 4}+NH{sub 3}) gaseous mixture. Morphological, structural and optical characterization of a-SiCN:H in correlation with process parameters was done. High growth rate of films was influenced mainly by presence of ammonia and silane in technological process. FTIR spectra analysis of films revealed the influence of gaseous mixture content in PECVD process on their structure. The refractive index and optical gap depended on elemental composition of films. The total reflectivity of a-SiCN:H on monocrystalline silicon revealed increase with the decrease in carbon and nitrogen content. The a-SiCN:H films are smooth, homogeneous, chemically inert and wear resistive and also hydrogen rich, which is important from the application point of view (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Structural, dynamical, electronic, and bonding properties of laser-heated silicon: An ab initio molecular-dynamics study

    NARCIS (Netherlands)

    Silvestrelli, P.-L.; Alavi, A.; Parrinello, M.; Frenkel, D.

    1997-01-01

    The method of ab initio molecular dynamics, based on finite-temperature density-functional theory, is used to simulate laser heating of crystalline silicon. We found that a high concentration of excited electrons dramatically weakens the covalent bonding. As a result the system undergoes a melting

  5. Analysis of Chemical Bonding and Structural Network of Gold Silicide in Core-Shell Silicon Nanowire

    Science.gov (United States)

    Swain, Bibhu P.; Swain, Bhabani S.

    2018-02-01

    The Au-catalyzed core-shell silicon nanowires (Si-NWs) were synthesized by chemical vapor deposition by using SiH4 and H2 precursor gases. The TEM and FTIR studies revealed that the Si-NWs consist of core silicon surrounded by a thick oxide sheath and Au distributed at the a-SiOx/Si interface. The x-ray photoelectron spectroscopy (XPS) was used to study the chemical composition and electronic environments of gold silicide in the a-SiO x /Si-NWs. The elemental analysis and chemical network of gold silicide of core-shell Si-NWs were explained on the basis of the random atomic distribution of Si, O and Au atoms. The Raman spectra and XRD peak reveal the crystalline core of Si-NWs. The individual contribution to the Au (4d) core orbital was deconvoluted to Au-Si-Au, Au-Si-O, Au-Au, Au-O-Au, Au-O-Si and Au=O/Au-O2 bonding structure. The analysis shows that the O linked with Si and Au has also contributed to growth of Si-NWs.

  6. Impact of ionic strength of growth on the physiochemical properties, structure, and adhesion of Listeria monocytogenes polyelectrolyte brushes to a silicon nitride surface in water.

    Science.gov (United States)

    Gordesli, Fatma Pinar; Abu-Lail, Nehal I

    2012-12-15

    The adhesion energies between pathogenic Listeria monocytogenes EGDe to a model surface of silicon nitride were quantified using atomic force microscopy (AFM) in water for cells grown in pure media (as the control) and in media of four different ionic strengths of added NaCl (IS of 0.05 M, 0.1 M, 0.3 M and 0.5 M NaCl). The physiochemical properties of L. monocytogenes EGDe surface brushes were shown to have a strong influence on the adhesion of the microbe to the silicon nitride surface. The transitions in the adhesion energies, physiochemical properties, and the structure of bacterial surface polyelectrolyte brushes were observed for the cells grown in the media of 0.1M added NaCl. Our results suggested that the highest long-range electrostatic repulsion which was partially balanced by the Liftshitz-van der Waals attraction for the cells grown at 0.1M was responsible for the highest energy barrier to adhesion for these cells as predicted by the soft-particle analysis of DLVO theory and the lower adhesion measured by AFM. Copyright © 2012 Elsevier Inc. All rights reserved.

  7. A study on the edge chipping according to spindle speed and inclination angle of workpiece in laser-assisted milling of silicon nitride

    Science.gov (United States)

    Woo, Wan-Sik; Lee, Choon-Man

    2018-02-01

    Ceramics are difficult to machine due to their high hardness and brittleness. As an effective method for machining ceramics, laser-assisted machining (LAM) has been studied by many researchers. In particular, many studies of methods to improve the machinability of silicon nitride using LAM have been performed. However, there is little research on the effect of the inclination angle of the workpiece, because varying the angle increases the difficulty of controlling the laser preheating and tool path. This paper investigates the effect of preheating temperature, spindle speed and inclination angle of the workpiece on edge chipping of silicon nitride in an effort to obtain an enhanced surface finish using laser-assisted milling (LAMill). The machining conditions were determined by considering the parameters that can reduce edge chipping using related theory. Experimental results showed a reduction in edge chipping based on increases in preheating temperature, spindle speed and inclination angle of the workpiece. Also, by increasing the spindle speed and the inclination angle of the workpiece, surface roughness was decreased due to reduction in the cutting force. The energy efficiency of LAMill by comparing the specific cutting energy according to the machining conditions is analyzed.

  8. Cubic silicon carbide and boron nitride as possible primary pressure calibrants for high pressure and temperature scale

    Science.gov (United States)

    Zhuravlev, K. K.; Goncharov, A. F.; Tkachev, S. N.; Prakapenka, V.

    2010-12-01

    K. K. Zhuravlev, A. F. Goncharov Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington DC, 20015 V. Prakapenka, S. N. Tkachev CARS, the University of Chicago, Bldg. 434A, Argonne National Laboratory, 9700 S. Cass. Ave., Argonne, IL 60439 Abstract Since its introduction, ruby-based pressure scale (Mao et al., 1986) has been the most commonly used by the high-pressure scientific community. However, it has limited use at elevated temperatures, due to the weakening and broadening of the ruby fluorescence line. The recent developments in the field of high temperature, high pressure physics and geophysics require some alternative pressure scale, which will be capable of measuring pressures at temperatures up to 3000 K. Cubic boron nitride (cBN) was recently (Goncharov et al., 2005) proposed as the possible pressure calibrant. It has been suggested that the simultaneous use of x-ray diffraction to measure density and Brillouin spectroscopy to obtain elastic properties of the crystal can be used to construct the pressure scale independent of any other pressure standards, i.e. cBN can be a primary pressure calibrant. However, the acoustic velocities of cBN are very close to those of diamond and, therefore, are hard to resolve in experiment at high pressures in diamond-anvil cell. Another possible primary pressure calibrant is cubic silicon carbide (SiC-3C). Its density and elastic parameters are quite different from the diamond ones and it is stable over the broad range of temperatures and pressures (up to 1 Mbar). SiC-3C is transparent and allows the use of Brillouin spectroscopy. Additionally, SiC-3C has two strong Raman lines, which can be used for the optical in situ pressure measurements. We report our experimental data on both cBN and SiC-3C and show that they, indeed, can be used in constructing reliable and accurate high-pressure, high-temperature scale. We performed single crystal x-ray diffraction and Brillouin

  9. Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

    Energy Technology Data Exchange (ETDEWEB)

    Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu; Economou, Demetre J., E-mail: economou@uh.edu [Department of Chemical and Biomolecular Engineering, Plasma Processing Laboratory, University of Houston, Houston, Texas 77204 (United States)

    2016-07-15

    Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreased sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.

  10. Influence of disorder on localization and density of states in amorphous carbon nitride thin films systems rich in π-bonded carbon atoms

    International Nuclear Information System (INIS)

    Alibart, F.; Lejeune, M.; Durand Drouhin, O.; Zellama, K.; Benlahsen, M.

    2010-01-01

    We discuss in this paper the evolution of both the density of states (DOS) located between the band-tail states and the DOS around the Fermi level N(E F ) in amorphous carbon nitride films (a-CN x ) as a function of the total nitrogen partial pressure ratio in the Ar/N 2 plasma mixture. The films were deposited by three different deposition techniques and their microstructure was characterized using a combination of infrared and Raman spectroscopy and optical transmission experiments, completed with electrical conductivity measurements, as a function of temperature. The observed changes in the optoelectronic properties are attributed to the modification in the atomic bonding structures, which were induced by N incorporation, accompanied by an increase in the sp 2 carbon bonding configurations and their relative disorder. The electrical conductivity variation was interpreted in terms of local effects on the nature and energy distribution of π and π* states.

  11. Plasma assisted chemical vapor deposited tantalum silicon nitride thin films for applications in nanoscale devices

    Science.gov (United States)

    Zeng, Wanxue

    The scaling issues resulting from diminishing device feature sizes have prompted the investigation of alternative materials and deposition techniques for copper diffusion barrier applications. As device sizes shrink to sub 100-nm technology nodes, the allowable copper diffusion barrier thickness falls to less than 10 nm. In this respect, novel materials are needed to stop copper diffusion into surrounding materials. TaSiN has been regarded as one of the most promising materials for copper diffusion barrier applications, owing to its excellent thermal stability, amorphous structure, and low resistivity. In this respect, a plasma assisted chemical vapor deposition (PACVD) process using TaF5, SiI4, N2, H2, and in-situ radio frequency (RF) plasma was optimized for depositing ultrathin TaSiN films, employing a design of experiments (DOE) approach. Film properties were characterized using Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), Auger electron spectroscopy (AES), x-ray diffraction (XRD), atomic force microscopy (AFM), four-point resistivity probe, and cross-section scanning electron microscopy (CS-SEM). The TaSiN films, deposited via optimized process conditions, exhibited low resistivity, low contamination levels, smooth surface morphology, good step coverage, excellent thermal stability, and amorphous structure. The copper diffusion barrier performance of optimized PACVD TaSiN films was assessed in Cu/TaSiN/Si structures using traditional high temperature annealing methods and in Cu/TaSiN/SiO2/Si structures using a triangular voltage sweep (TVS) method. The results from the former technique show that the diffusion barrier performance of TaSiN films with higher silicon concentration, corresponding to a more prevalent amorphous structure, leads to worse Cu diffusion barrier performance. The results from the TaSiN barrier testing also show that thinner TaSiN films (≤5 nm) performed better as Cu diffusion barriers than thicker Ta

  12. Glass frit bonding with controlled width and height using a two-step wet silicon etching procedure

    Science.gov (United States)

    Yifang, Liu; Daner, Chen; Liwei, Lin; Gaofeng, Zheng; Jianyi, Zheng; Lingyun, Wang; Daoheng, Sun

    2016-03-01

    A simple and versatile two-step silicon wet etching technique for the control of the width and height of the glass frit bonding layer has been developed to improve bonding strength and reliability in wafer-level microelectromechanical systems (MEMS) packaging processes. The height of the glass frit bonding layer is set by the design of a vertical reference wall which regulates the distance between the silicon wafer and the encapsulation capping substrate. On the other hand, the width of the bonding layer is constrained between two micro grooves which are used to accommodate the spillages of extra glass frit during the bonding process. An optimized thermal bonding process, including the formation of glass liquid, removal of gas bubbles under vacuum and the filling of voids under normal atmospheric condition has been developed to suppress the formation of the bubbles/voids. The stencil printing and pre-sintering processes for the glass frit have been characterized before the thermal bonding process under different magnitudes of bonding pressure. The bonding gap thickness is found to be equal to the height of the reference wall of 10 μm in the prototype design. The bubbles/voids are found to be suppressed effectively and the bonding strength increases from 10.2 to 19.1 MPa as compared with a conventional thermal annealing process in air. Experimentally, prototype samples are measured to have passed the high hermetic sealing leakage tests of 5  ×  10-8 atm cc s-1.

  13. Influence of additive system (Al2O3-RE2O3 , RE = Y, La, Nd, Dy, Yb on microstructure and mechanical properties of silicon nitride-based ceramics

    Directory of Open Access Journals (Sweden)

    Juliana Marchi

    2009-06-01

    Full Text Available Silicon nitride based ceramics have been widely used as structural ceramics, due mainly to their thermo-mechanical properties such as high density, high thermal shock resistance, corrosion resistance and chemical stability. The aim of this study was to determine the influence of rare earth and aluminum oxide additions as sintering aids on densification, microstructure and mechanical properties of silicon nitride. Silicon nitride mixtures with 91 wt. (% Si3N4 and 9% wt. (% additives were prepared and sintered. The density, microstructure and mechanical properties of the sintered specimens of these mixtures were determined. In most specimens, scanning electron microscopic examination and X ray diffraction analysis revealed elongated grains of β-Si3N4 with aspect ratio of about 2.0 and dispersed in a glassy phase. The density of the sintered specimens was higher than 94% of the theoretical density (td and specimens with La2O3 and Al2O3 additions exhibited the highest value. The results of this investigation indicate that the rare earth ion size influences densification of silicon nitride, but this correlation was not observed in specimens containing two different rare earth oxides. The hardness values varied in direct proportion to the density of the specimens and the fracture toughness values were influenced by the composition of the intergranular glassy phase.

  14. Optical, mechanical and tribological properties of Y{sub 2}O{sub 3}, Er{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} doped polycrystalline silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Bhupendra [Department of Metallurgy and Material Engineering, Sunmoon University (Korea, Republic of); Fu Zhengyi [State Key Lab of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology (China); Niihara, Koichi [Nagaoka University of Technology, Nagaoka (Japan); Lee, Soo W, E-mail: joshibhupen@gmail.com [Department of Environment Engineering, Sunmoon University, Asan (Korea, Republic of)

    2011-10-29

    Y{sub 2}O{sub 3}, Er{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} doped polycrystalline silicon nitride ceramics were prepared by hot press sintering method at 1850deg. C and 30 MPa pressure. 1 wt.% of each rare earth oxides (REO) were sintered with 3 wt.% MgO, 9 wt.% AlN and 87 wt.% {alpha}-Si{sub 3}N{sub 4}.The optical, mechanical and tribological properties of REO doped polycrystalline silicon nitride ceramics were investigated. Optical transmittance was measured in visible and near infrared region and found to be 54% transmittance for Y{sub 2}O{sub 3} doped Si{sub 3}N{sub 4} ceramics. {beta}- phase transformation was suppressed with REO addition. High hardness and high fracture toughness were achieved by addition of REO. Adding REO shows good mechanical properties as high strength and toughness. Coefficient of friction of the REO doped silicon nitride ceramics was lower than that of without REO doped silicon nitride ceramics.

  15. Boron nitride - Composition, optical properties, and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  16. Boron nitride: Composition, optical properties and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  17. [Effect of different polymerization methods on shear bond strength between polymethyl methacrylate and silicone soft liner].

    Science.gov (United States)

    Zhang, Fubao; Shi, Lianshui; Deng, Li; Zhang, Lin; Zeng, Yongfa; Tu, Tao

    2014-06-01

    To compare shear bond strength (SBS) between two types of silicone soft liner and polymethyl methacrylate (PMMA) under the condition of heat curing and room temperature curing. A total of 48 PMMA specimens (50 mm x 10 mm x 3 mm) were made by water-bath heating method, and randomly divided into four groups. By using Ufi Gel P (UGP) as soft liner material, group A1 was prepared under heat curing, and group A2 was prepared under room temperature curing. To form the other two groups, Silagum-Comfort (SLC) as soft-liner material was used. Group B1 was prepared under heat curing, and group B2 was prepared under room temperature curing. Shear bond strength (SBS) was tested by using the electronic universal testing machine. The adhesives layer and surface of silastic and PMMA were observed by optical microscope and scanning electron microscopy (SEM). The SBS of groups A1, A2, B1, B2 were (2.39 +/- 0.24), (1.74 +/- 0.27), (3.09 +/- 0.26), and (2.21 +/- 0.29) MPa, respectively. Significant differences were found between A1 and A2, B1 and B2, A1 and B1, and A2 and B2 (P < 0.05). Optical microscope showed numerous bubbles in the cured UGP, and no air bubbles in the SLC. The surface of PMMA was rough. SEM images showed that each group had continual consistent adhesive interface and a whisker hump on the adhesive layer of A2 and B2. The SBS ofUGP, SLC, and PMMA achieved minimum clinical standard of 0.44 MPa. The SBS of UGP and PMMA were higher than that of SLC and PMMA. The polymerization method of heat curing was higher than room temperature curing.

  18. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  19. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  20. Nonequilibrium Growth of GaN/Si(1-x-y)Ge(x)C(y)/Silicon-on-Insulator

    National Research Council Canada - National Science Library

    Ho, Wilson

    2000-01-01

    ... of this growth technique. Research highlights include the successful growth of silicon carbide, gallium nitride, and aluminum nitride thin films on silicon and miscut silicon substrates, on four-inches silicon wafers...

  1. Enzyme mediated silicon-oxygen bond formation; the use of Rhizopus oryzae lipase, lysozyme and phytase under mild conditions.

    Science.gov (United States)

    Abbate, Vincenzo; Bassindale, Alan R; Brandstadt, Kurt F; Lawson, Rachel; Taylor, Peter G

    2010-10-21

    The potential for expanding the variety of enzymic methods for siloxane bond formation is explored. Three enzymes, Rhizopus oryzae lipase (ROL), lysozyme and phytase are reported to catalyse the condensation of the model compound, trimethylsilanol, formed in situ from trimethylethoxysilane, to produce hexamethyldisiloxane in aqueous media at 25 °C and pH 7. Thermal denaturation and reactant inhibition experiments were conducted to better understand the catalytic role of these enzyme candidates. It was found that enzyme activities were significantly reduced following thermal treatment, suggesting a potential key-role of the enzyme active sites in the catalysis. Similarly, residue-specific modification of the key-amino acids believed to participate in the ROL catalysis also had a significant effect on the silicon bio-catalysis, indicating that the catalytic triad of the lipase may be involved during the enzyme-mediated formation of the silicon-oxygen bond. E. coli phytase was found to be particularly effective at catalysing the condensation of trimethylsilanol in a predominantly organic medium consisting of 95% acetonitrile and 5% water. Whereas the use of enzymes in silicon chemistry is still very much a developing and frontier activity, the results presented herein give some grounds for optimism that the variety of enzyme mediated reactions will continue to increase and may one day become a routine element in the portfolio of the synthetic silicon chemist.

  2. From Molecules to Surfaces: Radical-Based Mechanisms of Si-S and Si-Se Bond Formation on Silicon.

    Science.gov (United States)

    Buriak, Jillian M; Sikder, Md Delwar H

    2015-08-05

    The derivatization of silicon surfaces can have profound effects on the underlying electronic properties of the semiconductor. In this work, we investigate the radical surface chemistry of silicon with a range of organochalcogenide reagents (comprising S and Se) on a hydride-terminated silicon surface, to cleanly and efficiently produce surface Si-S and Si-Se bonds, at ambient temperature. Using a diazonium-based radical initiator, which induces formation of surface silicon radicals, a group of organochalcogenides were screened for reactivity at room temperature, including di-n-butyl disulfide, diphenyl disulfide, diphenyl diselenide, di-n-butyl sulfide, diphenyl selenide, diphenyl sulfide, 1-octadecanethiol, t-butyl disulfide, and t-butylthiol, which comprises the disulfide, diselenide, thiol, and thioether functionalities. The surface reactions were monitored by transmission mode Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ionization mass spectrometry. Calculation of Si-Hx consumption, a semiquantitative measure of yield of production of surface-bound Si-E bonds (E = S, Se), was carried out via FTIR spectroscopy. Control experiments, sans the BBD diazonium radical initiator, were all negative for any evident incorporation, as determined by FTIR spectroscopy. The functional groups that did react with surface silicon radicals included the dialkyl/diphenyl disulfides, diphenyl diselenide, and 1-octadecanethiol, but not t-butylthiol, diphenyl sulfide/selenide, and di-n-butyl sulfide. Through a comparison with the rich body of literature regarding molecular radicals, and in particular, silyl radicals, reaction mechanisms were proposed for each. Armed with an understanding of the reaction mechanisms, much of the known chemistry within the extensive body of radical-based reactivity has the potential to be harnessed on silicon and could be extended to a range of technologically relevant semiconductor

  3. Evaluation of tensile bond strength of heat cure and autopolymerizing silicone-based resilient denture liners before and after thermocycling.

    Science.gov (United States)

    Madan, Nishtha; Datta, Kusum

    2012-01-01

    To assess the effect of simulated mouth conditions reproduced with thermocycling on the tensile bond strength of two silicone based resilient denture liners with acrylic resin bases. Two silicone-based soft denture liners (Mollosil - Chairside autopolymerization and Molloplast B - Heat polymerization) were tested. For each liner, 30 specimens with a cross-sectional area of 10 Χ 10 mm and thickness 3 mm were processed between two acrylic blocks (Trevalon). Specimens were divided into a control group that was stored for 24 hours in water at 37°C and a test group that was thermocycled (2500 cycles) between baths of 5° and 55°C. Tensile bond strength (kg/cm²) was determined in a universal testing machine using crosshead speed of 5 mm/min. The student t-test was used to determine the significance of the difference in bond strength between the two liners. The mean tensile bond strength for control and thermocycled specimens of the two liners were: Mollosil (6.82 kg/cm² and 8.41 kg/cm²) and Molloplast-B (16.30 kg/cm² and 13.67 kg/cm²), respectively. Comparison of bond strength of control specimens with thermocycled specimens of the liners indicated a significant difference for both Mollosil (P=0.045) and Molloplast-B (P=0.027). Comparison between control specimens of both liners and thermocycled specimens of both liners indicated a highly significant difference (Ptensile bond strength than autopolymerizing liner Mollosil regardless of thermocycling. The bond strength of Mollosil increased after thermocycling while that of Molloplast-B decreased after thermocycling. Although heat-polymerized denture liners require more processing time than autopolymerizing liners, but they display much better adhesion properties to denture base resin and should thus be preferred when soft liner has to be used for a longer duration of time.

  4. Comparative evaluation of tensile bond strength of silicone-based denture liners after thermocycling and surface treatment.

    Science.gov (United States)

    Kaur, Harsimran; Datta, Kusum

    2015-01-01

    To examine, evaluate, and compare the tensile bond strength of two silicone-based liners; one autopolymerizing and one heat cured, when treated with different chemical etchants to improve their adhesion with denture base resin. Hundred and sixty test specimens of heat-cured polymethyl methacrylate (PMMA) were fabricated; out of which 80 specimens were tested for tensile bond strength after bonding it to autopolymerizing resilient liner (Ufigel P) and rest 80 to heat-cured resilient liner (Molloplast B). Each main group was further divided into four subgroups of 20 specimens each, one to act as a control and three were subjected to surface treatment with different chemical etchants namely dichloromethane, MMA monomer, and chloroform. The two silicone-based denture liners were processed between 2 PMMA specimens (10 mm × 10 mm × 40 mm) in the space provided by a spacer of 3 mm, thermocycled (5-55°C) for 500 cycles, and then their tensile strength measurements were done in the universal testing machine. One-way ANOVA technique showed a highly significant difference in the mean tensile bond strength values for all the groups. The Student's t-test computed values of statistics for the compared groups were greater than the critical values both at 5% and at 1% levels. Surface treatment of denture base resin with chemical etchants prior to the application of silicone-based liner (Ufigel P and Molloplast-B) increased the tensile bond strength. The increase was the highest with specimens subjected to 180 s of MMA surface treatment and the lowest with control group specimens.

  5. Comparative evaluation of tensile bond strength of silicone-based denture liners after thermocycling and surface treatment

    Directory of Open Access Journals (Sweden)

    Harsimran Kaur

    2015-01-01

    Full Text Available Purpose: To examine, evaluate, and compare the tensile bond strength of two silicone-based liners; one autopolymerizing and one heat cured, when treated with different chemical etchants to improve their adhesion with denture base resin. Materials and Methods: Hundred and sixty test specimens of heat-cured polymethyl methacrylate (PMMA were fabricated; out of which 80 specimens were tested for tensile bond strength after bonding it to autopolymerizing resilient liner (Ufigel P and rest 80 to heat-cured resilient liner (Molloplast B. Each main group was further divided into four subgroups of 20 specimens each, one to act as a control and three were subjected to surface treatment with different chemical etchants namely dichloromethane, MMA monomer, and chloroform. The two silicone-based denture liners were processed between 2 PMMA specimens (10 mm × 10 mm × 40 mm in the space provided by a spacer of 3 mm, thermocycled (5-55°C for 500 cycles, and then their tensile strength measurements were done in the universal testing machine. Results: One-way ANOVA technique showed a highly significant difference in the mean tensile bond strength values for all the groups. The Student′s t-test computed values of statistics for the compared groups were greater than the critical values both at 5% and at 1% levels. Conclusion: Surface treatment of denture base resin with chemical etchants prior to the application of silicone-based liner (Ufigel P and Molloplast-B increased the tensile bond strength. The increase was the highest with specimens subjected to 180 s of MMA surface treatment and the lowest with control group specimens.

  6. Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

    Science.gov (United States)

    Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

    2017-12-01

    A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

  7. Delivery of Cisplatin Anti-Cancer Drug from Carbon, Boron Nitride, and Silicon Carbide Nanotubes Forced by Ag-Nanowire: A Comprehensive Molecular Dynamics Study.

    Science.gov (United States)

    Mehrjouei, Esmat; Akbarzadeh, Hamed; Shamkhali, Amir Nasser; Abbaspour, Mohsen; Salemi, Sirous; Abdi, Pooya

    2017-07-03

    In this work, liberation of cisplatin molecules from interior of a nanotube due to entrance of an Ag-nanowire inside it was simulated by classical molecular dynamics method. The aim of this simulation was investigation on the effects of diameter, chirality, and composition of the nanotube, as well as the influence of temperature on this process. For this purpose, single walled carbon, boron nitride, and silicon carbide nanotube were considered. In order for a more concise comparison of the results, a new parameter namely efficiency of drug release, was introduced. The results demonstrated that the efficiency of drug release is sensitive to its adsorption on outer surface of the nanotube. Moreover, this efficiency is also sensitive to the nanotube composition and its diameter. For the effect of nanotube composition, the results indicated that silicon carbide nanotube has the least efficiency for drug release, due to its strong drug-nanotube. Also, the most important acting forces on drug delivery are van der Waals interactions. Finally, the kinetic of drug release is fast and is not related to the structural parameters of the nanotube and temperature, significantly.

  8. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  9. Determination of molecular stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Unversidade de Lisboa, Estrada Nacional 10 ao km 139.7, 2695-066 Bobadela LRS (Portugal); Bergmaier, A. [Institut für Angewandte Physik und Messtechnik, Fakultät für Luft und Raumfahrttechnik, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany); Mizohata, K. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Msimanga, M. [iThemba LABS Gauteng, National Research Foundation, Private Bag 11, WITS 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, Private Bag X680, Pretoria 0001 (South Africa); Räisänen, J. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Sajavaara, T. [Department of Physics, University of Jyväskylä, Survontie 9, 40014 Jyväskylä (Finland); Simon, A. [International Atomic Energy Agency, Division of Physical and Chemical Sciences, Vienna International Centre, P.O. Box 100, A-1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences, (ATOMKI), P.O. Box 51, H-4001 Debrecen (Hungary)

    2015-10-01

    Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si{sub 3}N{sub 4}, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the ions involved, which in the case of HI-ERDA is both the primary beam, and the recoiled species. We measured the stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in a well-characterised silicon nitride membrane. The measurements were made by independent groups utilising different experimental setups and methods. In some cases there is extensive overlap of the energy range in different experiments, allowing a comparison of the different results. The four independent data sets reported in this work are in excellent agreement with each other, in the cases where similar energy ranges were measured. On the other hand, the data are in most cases higher than calculations made with the interpolative schemes SRIM and MSTAR together with the Bragg rule. Better agreement is found with MSTAR in some of the cases studied. This work is a significant extension of the heavy ion stopping power data base for silicon nitride.

  10. Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

    Science.gov (United States)

    Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

    2018-03-01

    A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

  11. Investigation of silicon carbon nitride nanocomposite films as a wear resistant layer in vitro and in vivo for joint replacement applications.

    Science.gov (United States)

    Liang, Y; Liu, D G; Bai, W Q; Tu, J P

    2017-05-01

    Silicon-contained CN x nanocomposite films were prepared using the ion beam assisted magnetron sputtering under different nitrogen gas pressure. With increase of the nitrogen pressure, silicon and nitrogen content of the CN x films drastically increase, and is saturated as the P N2 reach about 40%. Surface roughness and the contact angle are increase, while the friction coefficient decreased. The CN x film with 5.7at.% Si content possess the lowest friction coefficient of only 0.07, and exhibited the best tribological properties. The impact of CN x films with different silicon content on the growth and the activation of osteoblasts were compared to that of Ti6Al4V. The incorporation of silicon in the CN x film also showed an increase cell adhesion. Bonding structure and surface energy were determined to be the factors contributing to the improved biocompatibility. Macrophages attached to 5.7at.% Si contained CN x films down regulated their production of cytokines and chemokines. Moreover, employed with Si contained CN x coated joint replacements, which were implanted subcutaneously into Sprague-Dawley mice for up to 36days, the tissue reaction and capsule formation was significantly decreased compared to that of Ti6Al4V. A mouse implantation study demonstrated the excellent in vivo biocompatibility and functional reliability of wear resist layer for joint replacements with a Si doped a-CN x coating for 36days. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. The evaluation of microleakage and bond strength of a silicone-based resilient liner following denture base surface pretreatment.

    Science.gov (United States)

    Sarac, Duygu; Sarac, Y Sinasi; Basoglu, Tarik; Yapici, Oktay; Yuzbasioglu, Emir

    2006-02-01

    The failure of adhesion between a silicone-based resilient liner and a denture base is a significant clinical problem. The purpose of this study was to examine the effects of denture base resin surface pretreatments with different chemical etchants preceding the silicone-based resilient liner application on microleakage and bond strength. The initial effects of chemical etchants on the denture base resin in terms of microstructural changes and flexural strength were also examined. Forty-two polymethyl methacrylate (PMMA) denture base resin (Meliodent) specimens consisting of 2 plates measuring 30 x 30 x 2 mm were prepared and divided into 7 groups (n = 6). Specimen groups were treated by immersion in acetone for 30 (A30) or 45 (A45) seconds, methyl methacrylate monomer for 180 (M180) seconds, and methylene chloride for 5 (MC5), 15 (MC15) or 30 (MC30) seconds. Group C had no surface treatment and served as the control. Subsequently, an adhesive (Mollosil) and a silicone-based resilient denture liner (Mollosil) were applied to the treated surfaces, and all specimens were immersed in the radiotracer solution (thalium-201 chloride) for 24 hours. Tracer activity (x-ray counts), as a parameter of microleakage, was measured using a gamma camera. For bond-strength measurement, 84 rectangular PMMA specimens (10 x 10 x 40 mm) were surface-smoothed for bonding and treated with the different chemical etchants using the same previously described group configurations. The adhesive and the silicone-based denture liner were applied to the treated surfaces. Tensile bond-strength (MPa) was measured in a universal testing machine. Flexural strength measurement was performed with 49 PMMA specimens (65 x 10 x 3.3 mm according to ISO standard 1567) in 7 groups (n = 7), with 1 flat surface of each treated with 1 of the chemical etchants preceding adhesive application. The flexural strength (MPa) was measured using a 3-point bending test in a universal testing machine. The data were

  13. Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; van Zeijl, H.; Wien, W. H. A.; Pham, H. T. M.; Kwakernaak, C.; Knoops, H. C. M.; Kessels, W. M. M.; R. van de Sanden,; Voogt, F. C.; Roozeboom, F.; Sarro, P. M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

  14. Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; Zeijl, H. van; Wien, W.H.A.; Pham, H.T.M.; Kwakernaak, C.; Knoops, H.C.M.; Erwin Kessels, W.M.M.; Sanden, R.M.C.M. van de; Voogt, F.C.; Roozeboom, F.; Sarro, P.M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

  15. The SNAP trial: a double blind multi-center randomized controlled trial of a silicon nitride versus a PEEK cage in transforaminal lumbar interbody fusion in patients with symptomatic degenerative lumbar disc disorders: study protocol

    Science.gov (United States)

    2014-01-01

    Background Polyetheretherketone (PEEK) cages have been widely used in the treatment of lumbar degenerative disc disorders, and show good clinical results. Still, complications such as subsidence and migration of the cage are frequently seen. A lack of osteointegration and fibrous tissues surrounding PEEK cages are held responsible. Ceramic implants made of silicon nitride show better biocompatible and osteoconductive qualities, and therefore are expected to lower complication rates and allow for better fusion. Purpose of this study is to show that fusion with the silicon nitride cage produces non-inferior results in outcome of the Roland Morris Disability Questionnaire at all follow-up time points as compared to the same procedure with PEEK cages. Methods/Design This study is designed as a double blind multi-center randomized controlled trial with repeated measures analysis. 100 patients (18–75 years) presenting with symptomatic lumbar degenerative disorders unresponsive to at least 6 months of conservative treatment are included. Patients will be randomly assigned to a PEEK cage or a silicon nitride cage, and will undergo a transforaminal lumbar interbody fusion with pedicle screw fixation. Primary outcome measure is the functional improvement measured by the Roland Morris Disability Questionnaire. Secondary outcome parameters are the VAS leg, VAS back, SF-36, Likert scale, neurological outcome and radiographic assessment of fusion. After 1 year the fusion rate will be measured by radiograms and CT. Follow-up will be continued for 2 years. Patients and clinical observers who will perform the follow-up visits will be blinded for type of cage used during follow-up. Analyses of radiograms and CT will be performed independently by two experienced radiologists. Discussion In this study a PEEK cage will be compared with a silicon nitride cage in the treatment of symptomatic degenerative lumbar disc disorders. To our knowledge, this is the first randomized controlled

  16. Fabrication and characterization of high-temperature microreactors with thin film heater and sensor patterns in silicon nitride tubes

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Berenschot, Johan W.; de Boer, J.H.; Sanders, Remco G.P.; Gardeniers, Johannes G.E.; Oosterbroek, R.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    2005-01-01

    In this paper the fabrication and electrical characterization of a silicon microreactor for high-temperature catalytic gas phase reactions, like Rh-catalyzed catalytic partial oxidation of methane into synthesis gas, is presented. The microreactor, realized with micromachining technologies, contains

  17. Silicon nitride grids are compatible with correlative negative staining electron microscopy and tip-enhanced Raman spectroscopy for use in the detection of micro-organisms.

    Science.gov (United States)

    Lausch, V; Hermann, P; Laue, M; Bannert, N

    2014-06-01

    Successive application of negative staining transmission electron microscopy (TEM) and tip-enhanced Raman spectroscopy (TERS) is a new correlative approach that could be used to rapidly and specifically detect and identify single pathogens including bioterrorism-relevant viruses in complex samples. Our objective is to evaluate the TERS-compatibility of commonly used electron microscopy (EM) grids (sample supports), chemicals and negative staining techniques and, if required, to devise appropriate alternatives. While phosphortungstic acid (PTA) is suitable as a heavy metal stain, uranyl acetate, paraformaldehyde in HEPES buffer and alcian blue are unsuitable due to their relatively high Raman scattering. Moreover, the low thermal stability of the carbon-coated pioloform film on copper grids (pioloform grids) negates their utilization. The silicon in the cantilever of the silver-coated atomic force microscope tip used to record TERS spectra suggested that Si-based grids might be employed as alternatives. From all evaluated Si-based TEM grids, the silicon nitride (SiN) grid was found to be best suited, with almost no background Raman signals in the relevant spectral range, a low surface roughness and good particle adhesion properties that could be further improved by glow discharge. Charged SiN grids have excellent particle adhesion properties. The use of these grids in combination with PTA for contrast in the TEM is suitable for subsequent analysis by TERS. The study reports fundamental modifications and optimizations of the negative staining EM method that allows a combination with near-field Raman spectroscopy to acquire a spectroscopic signature from nanoscale biological structures. This should facilitate a more precise diagnosis of single viral particles and other micro-organisms previously localized and visualized in the TEM. © 2014 The Society for Applied Microbiology.

  18. Silicon-Chip-Based Optical Frequency Combs

    Science.gov (United States)

    2015-10-26

    microresonator,” Phys. Rev. Lett. 107, 063901 (2011). [54] H. Jung, et al., “Optical frequency comb generation from aluminum nitride microring resonator...supercontinuum generation in silicon nitride waveguides. 15. SUBJECT TERMS Nonlinear optics, parametric mixing, nanophotonics, optical frequency combs 16...Finally, we investigated comb generation via coherent supercontinuum generation in silicon nitride waveguides. Our research effort illustrates that the

  19. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  20. A facile mechanochemical route to a covalently bonded graphitic carbon nitride (g-C3N4) and fullerene hybrid toward enhanced visible light photocatalytic hydrogen production.

    Science.gov (United States)

    Chen, Xiang; Chen, Huanlin; Guan, Jian; Zhen, Jieming; Sun, Zijun; Du, Pingwu; Lu, Yalin; Yang, Shangfeng

    2017-05-04

    Graphitic carbon nitride (g-C 3 N 4 ) as an emerging two-dimensional (2D) nanomaterial has been commonly used as a metal-free photocatalyst with potential applications in visible light photocatalytic water-splitting. However, the photocatalytic activity of g-C 3 N 4 is quite low due to its relatively large band gap and the existence of contact resistance between the nanosheets. Herein we report for the first time the facile synthesis of a covalently bonded g-C 3 N 4 /C 60 hybrid via a solid-state mechanochemical route and its application in photocatalytic hydrogen production under visible light. The g-C 3 N 4 /C 60 hybrid was synthesized by ball-milling g-C 3 N 4 and C 60 in the presence of lithium hydroxide (LiOH) as a catalyst. The hybrid nature and conformation of the g-C 3 N 4 /C 60 hybrid were confirmed by a series of spectroscopic and morphological studies, featuring the covalent bonding of C 60 onto the edges of g-C 3 N 4 nanosheets via a four-membered ring of azetidine, which has never been reported in fullerene chemistry. The g-C 3 N 4 /C 60 hybrid was further applied to metal-free visible light photocatalytic hydrogen production, affording a H 2 production rate of 266 μmol h -1 g -1 without using any noble metal cocatalyst such as Pt, which is about 4.0 times higher than that obtained for the pristine g-C 3 N 4 photocatalyst.

  1. A comparative study on carbon, boron-nitride, boron-phosphide and silicon-carbide nanotubes based on surface electrostatic potentials and average local ionization energies.

    Science.gov (United States)

    Esrafili, Mehdi D; Behzadi, Hadi

    2013-06-01

    A density functional theory study was carried out to predict the electrostatic potentials as well as average local ionization energies on both the outer and the inner surfaces of carbon, boron-nitride (BN), boron-phosphide (BP) and silicon-carbide (SiC) single-walled nanotubes. For each nanotube, the effect of tube radius on the surface potentials and calculated average local ionization energies was investigated. It is found that SiC and BN nanotubes have much stronger and more variable surface potentials than do carbon and BP nanotubes. For the SiC, BN and BP nanotubes, there are characteristic patterns of positive and negative sites on the outer lateral surfaces. On the other hand, a general feature of all of the systems studied is that stronger potentials are associated with regions of higher curvature. According to the evaluated surface electrostatic potentials, it is concluded that, for the narrowest tubes, the water solubility of BN tubes is slightly greater than that of SiC followed by carbon and BP nanotubes.

  2. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

    2005-07-15

    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  3. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  4. Non-silicon substrate bonding mediated by poly(dimethylsiloxane) interfacial coating

    Science.gov (United States)

    Zhang, Hainan; Lee, Nae Yoon

    2015-02-01

    In this paper, we introduce a simple and robust strategy for bonding poly(dimethylsiloxane) (PDMS) with various thermoplastic substrates to fabricate a thermoplastic-based closed microfluidic device and examine the feasibility of using the proposed method for realizing plastic-plastic bonding. The proposed bonding strategy was realized by first coating amine functionality on an oxidized thermoplastic surface. Next, the amine-functionalized surface was reacted with a monolayer of low-molecular-weight PDMS, terminated with epoxy functionality, by forming a robust amine-epoxy bond. Both the PDMS-coated thermoplastic and PDMS were then oxidized and permanently assembled at 25 °C under a pressure of 0.1 MPa for 15 min, resulting in PDMS-like surfaces on all four inner walls of the microchannel. Surface characterizations were conducted, including water contact angle measurement, X-ray photoelectron spectroscopy (XPS), and fluorescence measurement, to confirm the successful coating of the thin PDMS layer on the plastic surface, and the bond strength was analyzed by conducting a peel test, burst test, and leakage test. Using the proposed method, we could successfully bond various thermoplastics such as poly(methylmethacrylate) (PMMA), polycarbonate (PC), polystyrene (PS), and poly(ethylene terephthalate) (PET) with PDMS without the collapse or deformation of the microchannel, and the proposed method was successfully extended to the bonding of two thermoplastics, PMMA, and PC.

  5. Room-temperature direct bonding of silicon and quartz glass wafers

    Science.gov (United States)

    Wang, Chenxi; Wang, Yuan; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

    2017-05-01

    We demonstrate a facile bonding method for combining Si/Si, Si/quartz, and quartz/quartz wafers at room temperature (˜25 °C) using a one-step O2/CF4/H2O plasma treatment. The bonding strengths were significantly improved by adding a small amount of CF4 into the oxygen plasma, such that reliable and tight bonding was obtained after storage in ambient air for 24 h, even without employing heat. Moreover, by introducing water vapor during O2/CF4 plasma treatment, uniform wafer bonding was spontaneously achieved without applying an external force. The fluorinated surface asperities appear to be softened more easily by the interfacial water stress corrosion, enabling reliable bonding at room temperature. Additionally, adding an optimized amount of water vapor to the O2/CF4 plasma increases sufficiently the amount of hydroxyl groups without eliminating the CF4 effect. The additional water adsorbed on the surface may help to close the gap between the bonded wafers, resulting in better bonding efficiency.

  6. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Valizadeh, R.; Colligon, J.S. [Salford Univ. (United Kingdom). DMM Institute; Katardiev, I.V. [Uppsala Univ. (Sweden). Angstrom Laboratory; Faunce, C.A.; Donnelly, S.E. [Salford Univ. (United Kingdom). Science Institute

    1998-06-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm{sup -2} and 2 GeV xenon ion with a dose of 1E12 ions.cm{sup -2} . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C{sub 3}N{sub 4} was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C{sub 3}N{sub 4} matrix was predominantly sp{sup 2} bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C{identical_to}N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous.

  7. Tensile bond strength of silicone-based soft denture liner to two chemically different denture base resins after various surface treatments.

    Science.gov (United States)

    Akin, Hakan; Tugut, Faik; Guney, Umit; Kirmali, Omer; Akar, Turker

    2013-01-01

    This study evaluated the effect of various surface treatments on the tensile bond strength of a silicone-based soft denture liner to two chemically different denture base resins, heat-cured polymethyl methacrylate (PMMA), and light-activated urethane dimethacrylate or Eclipse denture base resin. PMMA test specimens were fabricated and relined with a silicone-based soft denture liner (group AC). Eclipse test specimens were prepared according to the manufacturer's recommendation. Before they were relined with a silicone-based soft denture liner, each received one of three surface treatments: untreated (control, group EC), Eclipse bonding agent applied (group EB), and laser-irradiated (group EL). Tensile bond strength tests (crosshead speed = 5 mm/min) were performed for all specimens, and the results were analyzed using the analysis of variance followed by Tukey's test (p = 0.05). Eclipse denture base and PMMA resins presented similar bond strengths to the silicone-based soft denture liner. The highest mean force was observed in group EL specimens, and the tensile bond strengths in group EL were significantly different (p < 0.05) from those in the other groups.

  8. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    Science.gov (United States)

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection.

  9. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  10. Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

    Science.gov (United States)

    Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

    2018-03-01

    Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

  11. Boron Nitride and Silicon Nitride Systems

    Science.gov (United States)

    1991-02-01

    Preparation Thereof" US-Patent 2947617 GEC, 2.Aug.i960 E7O6auJ J.Gaude and J.Lang, "The System Strontium-Nitrogen",Rev.Chim. Minerale 7 (1970) 10)59...Chim. Minerale 11 (1974) 80-84 [85VilJ C.Villars and L.D.Calvert,"Pearsons Handbook of Crystallographic Data for Intermetallic Phases" (Amer.Soc. Met

  12. Aluminum nitride grating couplers.

    Science.gov (United States)

    Ghosh, Siddhartha; Doerr, Christopher R; Piazza, Gianluca

    2012-06-10

    Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated. Gratings and a waveguide micromachined on a silicon wafer with 600 nm minimum feature size were defined in a single lithography step without partial etching. Silicon dioxide (SiO(2)) was used for cladding layers. Peak coupling efficiency of -6.6 dB and a 1 dB bandwidth of 60 nm have been measured. This demonstration of wire waveguides and wideband grating couplers in a material that also has piezoelectric and elasto-optic properties will enable new functions for integrated photonics and optomechanics.

  13. Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers

    International Nuclear Information System (INIS)

    Alpuim, P.; Majee, S.; Cerqueira, M.F.; Tondelier, D.; Geffroy, B.; Bonnassieux, Y.; Bourée, J.E.

    2015-01-01

    Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiN x ) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~ 100°°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximum ion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiN x single layers, a minimum WVTR of 5 × 10 −4 g/(m 2 day), measured at room temperature, was found for a maximum ion energy of ~ 30 eV. This minimum WVTR value was reduced to 7 × 10 −5 g/(m 2 day) for a stack of five SiN x single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy. - Highlights: • Αn original way to achieve permeation barriers on polymer substrates is developed. • It combines SiN x multilayers grown by HWCVD with an intermediate Ar plasma treatment. • A minimum of water vapor transmission rate is found related to maximum Ar ion energy. • This minimum is due to atomic rearrangement in SiN x interfaces under the impact of ions. • The average Ar ion energy must exceed atomic threshold displacement energy for Si.

  14. An X-ray diffraction study of direct-bonded silicon interfaces

    DEFF Research Database (Denmark)

    Howes, P.B.; Benamara, M.; Grey, F.

    1998-01-01

    Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals ...

  15. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  16. Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

    Energy Technology Data Exchange (ETDEWEB)

    Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Yanagisawa, Susumu; Kadekawa, Yukihiro [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

    2014-02-14

    By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

  17. Developmental history and trends for reaction-bonded silicon carbide mirrors

    Science.gov (United States)

    Ealey, Mark A.; Weaver, Gerald Q.

    1996-11-01

    During the decade of the 1980's, silicon carbide was funded primarily as the water cooled mirror material for the future and secondarily as a lightweight tactical alternative to beryllium and glass. With the perceived deployment of Star Wars, the payoff for the silicon carbide investment was imminent. Wrong assumption. The emphasis shifted from cooled optics to lightweight, uncooled optics and structures during the early 1990's. CERAFORM SiC became more attractive as a mirror material as the forming process produced lighter, closed back mirrors and a polishing process was developed to finish the bare material to 10 angstroms rms. Cost became the major limitation to penetrating commercial markets and with the defense cut-backs in 1993 UTOS ceases operations. The facilities and intellectual property associated with CERAFORM was at the mercy of bean counters. In March 1995 Xintics officially purchased form the United Technologies Corporation all intellectual property including patents, processes, proposals, engineering notebook, and trademarks pertaining to CERAFORM SiC. In a subsequent deal, part of the furnace facility was also obtained.

  18. Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI

    CERN Document Server

    Brönnimann, C; Gobrecht, J; Heising, S; Horisberger, M; Horisberger, R P; Kästli, H C; Lehmann, J; Rohe, T; Streuli, S; Broennimann, Ch.

    2006-01-01

    The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a seco...

  19. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

    Directory of Open Access Journals (Sweden)

    Tománek P.

    2013-05-01

    Full Text Available The objective of the study is a growth of SiC/(SiC1−x(AlNx structures by fast sublimation epitaxy of the polycrystalline source of (SiC1−x(AlNx and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes. The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

  20. Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film

    International Nuclear Information System (INIS)

    Lu, Wei-Lun; Kuo, Ting-Wei; Huang, Chun-Hsien; Wang, Na-Fu; Tsai, Yu-Zen; Wang, Ming-Wei; Hung, Chen-I.; Houng, Mau-Phon

    2011-01-01

    In our study, fluorine-doped silicon oxide (SiOF) films were prepared using a mixture of SiH 4 , N 2 O, and CF 4 in a conventional plasma enhanced chemical vapor deposition system at various deposition temperatures. Deposition behaviors are determined by the deposition temperature. Our results show that for temperatures below 300 deg. C the process is surface-reaction-limited controlled, but becomes diffusion-limited when the deposition temperature exceeds 300 deg. C. The surface topography images obtained using an atomic force microscope show that a large amount of free volume space was created in the film with a low temperature deposition. The optical microscope and secondary ion mass spectrometer analyses show that precipitates were produced at the near-surface at the deposition temperature of 150 deg. C with a higher fluorine concentration of 2.97 at.%. Our results show that the properties of the SiOF film are controlled not only by the free volume space but also by the fluorine concentration. An optimal SiOF film prepared at a temperature of 200 deg. C shows a low dielectric constant of 3.55, a leakage current of 1.21 x 10 -8 A/cm 2 at 1 MV/cm, and a fluorine concentration of 2.5 at.%.

  1. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  2. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  3. Peel bond strength of two silicone soft liners to a heat-cured denture base resin.

    Science.gov (United States)

    Demir, Hakan; Dogan, Arife; Dogan, Orhan Murat; Keskin, Selda; Bolayir, Giray; Soygun, Koray

    2011-12-01

    This study investigated the peel strength of two different soft liners to a polymethylmethacrylate (PMMA) denture base resin before and after thermocycling. The silicone-based soft liner materials tested were Molloplast B and Permaflex; the denture base material was a heat-cured acrylic resin, Meliodent. A total of 40 specimens was prepared using rectangular molds with dimensions of 100 x 10 x 2 mm for PMMA and 150 x 10 x 2 mm for soft liners, as described in ASTM-D903-93. For each of the liner materials, 10 specimens were packed against a cured PMMA denture base surface as recommended by the manufacturers. The other 10 specimens were packed against PMMA denture base dough and processed together. In each group, 5 of the specimens were tested directly, while the other 5 were thermocycled in a water bath (5°C to 55°C; 3000 cycles) before testing. Peel testing was performed using an Instron testing machine. The results revealed that peel strength values of the Permaflex specimens prepared according to the manufacturer's recommendations were significantly higher than those of Molloplast B (p < 0.05). However, when packing was done against uncured PMMA dough, the difference between the specimens of two liners was not significant. Thermocycling led to significant decreases in the peel strength of both Permaflex liner specimens packed against cured/uncured PMMA resin surfaces (p < 0.05), whereas this process did not affect the strength of Molloplast B specimens. Results indicated that the material Molloplast B was superior to the material Permaflex in terms of peel strength when the specimens were simultaneously polymerized with PMMA and thermocycled.

  4. Investigation of bonding properties of denture bases to silicone-based soft denture liner immersed in isobutyl methacrylate and 2-hydroxyethyl methacrylate

    OpenAIRE

    Akin, Hakan; Tugut, Faik; Mutaf, Burcu; Guney, Umit

    2014-01-01

    PURPOSE The purpose of this study was to investigate the bonding properties of denture bases to silicone-based soft denture liners immersed in isobutyl methacrylate (iBMA) and 2-hydroxyethyl methacrylate (HEMA) for various lengths of time. MATERIALS AND METHODS Polymethyl methacrylate (PMMA) test specimens were fabricated (75 mm in length, 12 mm in diameter at the thickest section, and 7 mm at the thinnest section) and then randomly assigned to five groups (n=15); untreated (Group 1), resilie...

  5. Microstructures of group III-nitrides after implantation with gallium

    International Nuclear Information System (INIS)

    Kench, P.J.

    2001-05-01

    High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

  6. Investigation of bonding properties of denture bases to silicone-based soft denture liner immersed in isobutyl methacrylate and 2-hydroxyethyl methacrylate.

    Science.gov (United States)

    Akin, Hakan; Tugut, Faik; Mutaf, Burcu; Guney, Umit

    2014-04-01

    The purpose of this study was to investigate the bonding properties of denture bases to silicone-based soft denture liners immersed in isobutyl methacrylate (iBMA) and 2-hydroxyethyl methacrylate (HEMA) for various lengths of time. Polymethyl methacrylate (PMMA) test specimens were fabricated (75 mm in length, 12 mm in diameter at the thickest section, and 7 mm at the thinnest section) and then randomly assigned to five groups (n=15); untreated (Group 1), resilient liner immersed in iBMA for 1 minute (Group 2), resilient liner immersed in iBMA for 3 minutes (Group 3), resilient liner immersed in HEMA for 1 minute (Group 4), and resilient liner immersed in HEMA for 3 minutes (Group 5). The resilient liner specimens were processed between 2 PMMA blocks. Bonding strength of the liners to PMMA was compared by tensile test with a universal testing machine at a crosshead speed of 5 mm/min. Data were evaluated by 1-way ANOVA and post hoc Tukey-Kramer multiple comparisons tests (α=0.05). The highest mean value of force was observed in Group 3 specimens. The differences between groups were statistically significant (P<.05), except between Group 1 and Group 4 (P=.063). Immersion of silicone-based soft denture liners in iBMA for 3 minutes doubled the tensile bond strength between the silicone soft liner and PMMA denture base materials compared to the control group.

  7. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  8. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  9. Effect of Different Surface Treatments and Thermocycling on Bond Strength of a Silicone-based Denture Liner to a Denture Base Resin.

    Science.gov (United States)

    Nakhaei, Mohammadreza; Dashti, Hossein; Ahrari, Farzaneh; Vasigh, Samaneh; Mushtaq, Shazia; Shetty, Rohit Mohan

    2016-02-01

    The aim of this study is to evaluate the effects of three different surface treatments and thermocycling on the tensile strength of a silicone lining material to denture resin. A total of 96 cube-shaped specimens were fabricated using heat-cured polymethyl methacrylate (PMMA) denture base resin. Three millimeters of the material was cut from the midsection. The specimens were divided into four groups. The bonding surfaces of the specimens in each group received one of the following surface treatments: no surface treatment (control group), airborne particle abrasion with 110 pirn alumina particles (air abrasion group), Er:yttrium aluminum garnet laser irradiation (laser group), and air abrasion + laser. After the lining materials were processed between the two PMMA blocks, each group was divided into two subgroups (n = 12), either stored in distilled water at 37°C for 24 hours or thermocycled between 5 and 55°C for 5,000 cycles. The specimens were tested in tensile and shear strength in a universal testing machine. Data were analyzed with two-way analysis of variance and Tamhane's post hoc tests (α = 0.05). The mode of failure was determined, and one specimen in each group was examined by scanning electron microscopy. Surface-treated groups demonstrated significantly higher tensile strengths compared to the control group (p 0.05). The tensile strength was significantly different between thermocycled and water-stored specimens (p = 0.021). Altering the surface of the acrylic denture base resin with air abrasion, laser, and air abrasion + laser increased the tensile strength. Thermocycling resulted in decrease in bond strength of silicone-based liner to surface-treated acrylic resin. Pretreatment of denture base resins before applying the soft liner materials improves the bond strength. However, thermocycling results in decrease in bond strength of soft denture liner to surface-treated acrylic resin.

  10. EXAFS investigation of low temperature nitrided stainless steel

    DEFF Research Database (Denmark)

    Oddershede, Jette; Christiansen, Thomas; Ståhl, Kenny

    2008-01-01

    contents: (1) nitriding in pure NH3 and (2)nitriding in pure NH3 followed by reduction in H2. The majority of the Cr atoms in the stainless steel after treatment 1 and 2 was associated with a nitrogen–chromium bond distance comparable to that of the chemical compound CrN. The possibility of the occurrence...... of mixed substitutional– interstitial atom clusters or coherent nitride platelets in nitrogen-expanded austenite is discussed....

  11. Comparative Evaluation of Tensile Bond Strength between Silicon Soft Liners and Processed Denture Base Resin Conditioned by Three Modes of Surface Treatment: An Invitro Study.

    Science.gov (United States)

    Surapaneni, Hemchand; Ariga, Padma; Haribabu, R; Ravi Shankar, Y; Kumar, V H C; Attili, Sirisha

    2013-09-01

    Soft denture liners act as a cushion for the denture bearing mucosa through even distribution of functional load, avoiding local stress concentrations and improving retention of dentures there by providing comfort to the patient. The objective of the present study was to compare and evaluate the tensile bond strengths of silicone-based soft lining materials (Ufi Gel P and GC Reline soft) with different surface pre treatments of heat cure PMMA denture base acrylic resin. Stainless steel dies measuring 40 mm in length; 10 mm in width and 10 mm in height (40 × 10 × 10) were machined to prepare standardized for the polymethyl methacrylate resin blocks. Stainless steel dies (spacer for resilient liner) measuring 3 mm thick; 10 mm long and 10 mm wide were prepared as spacers to ensure uniformity of the soft liner being tested. Two types of Addition silicone-based soft lining materials (room temperature polymerised soft lining materials (RTPSLM): Ufi Gel P and GC Reline soft) were selected. Ufi Gel P (VOCO, Germany), GC Reline soft (GC America) are resilient, chairside vinyl polysiloxane denture reliners of two different manufacturers. A total of 80 test samples were prepared of which 40 specimens were prepared for Group A (Ufi Gel P) and 40 specimens for Group B (GC Reline soft). In these groups, based on Pre-treatment of acrylic resin specimens each group was subdivided into four sub groups of 10 samples each. Sub-group I-without any surface treatment. Sub-group II-sand blasted Sub-group III-treated with Methyl Methacrylate monomer Sub-group IV-treated with chemical etchant Acetone. The results were statistically analysed by Kruscal Wallis test, Mann-Whitney U test, and Independent t test. The specimens treated with MMA monomer wetting showed superior and significant bond strength than those obtained by other surface treatments. The samples belonging to subgroups of GC Reline soft exhibit superior tensile bond strength than subgroups of Ufi Gel P. The modes

  12. Comprehensive Die Shear Test of Silicon Packages Bonded by Thermocompression of Al Layers with Thin Sn Capping or Insertions

    Directory of Open Access Journals (Sweden)

    Shiro Satoh

    2018-04-01

    Full Text Available Thermocompression bonding for wafer-level hermetic packaging was demonstrated at the lowest temperature of 370 to 390 °C ever reported using Al films with thin Sn capping or insertions as bonding layer. For shrinking the chip size of MEMS (micro electro mechanical systems, a smaller size of wafer-level packaging and MEMS–ASIC (application specific integrated circuit integration are of great importance. Metal-based bonding under the temperature of CMOS (complementary metal-oxide-semiconductor backend process is a key technology, and Al is one of the best candidates for bonding metal in terms of CMOS compatibility. In this study, after the thermocompression bonding of two substrates, the shear fracture strength of dies was measured by a bonding tester, and the shear-fractured surfaces were observed by SEM (scanning electron microscope, EDX (energy dispersive X-ray spectrometry, and a surface profiler to clarify where the shear fracture took place. We confirmed two kinds of fracture mode. One mode is Si bulk fracture mode, where the die shear strength is 41.6 to 209 MPa, proportionally depending on the area of Si fracture. The other mode is bonding interface fracture mode, where the die shear strength is 32.8 to 97.4 MPa. Regardless of the fracture modes, the minimum die shear strength is practical for wafer-level MEMS packaging.

  13. Solar cell with a gallium nitride electrode

    Science.gov (United States)

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  14. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  15. Cubic and hexagonal boron-nitride (c-BN/h-BN) thin films deposited in situ by r.f. magnetron sputtering

    Science.gov (United States)

    Caicedo, J. M.; Bejarano, G.; Zambrano, G.; Baca, E.; Morán, O.; Prieto, P.

    2005-07-01

    Cubic boron-nitride (c-BN)/hexagonal boron nitride (h-BN) thin films were grown in situ on (100) oriented silicon substrates by r.f. (13.56 MHz) magnetron sputtering technique. In order to obtain the highest fraction of the c-BN phase, a negative d.c bias voltage, varying from 0 to -200 V was applied to the substrate during deposition. Another set of boron nitride thin films was deposited in situ on (100) oriented silicon substrates under r.f. bias voltage. The substrate holder was biased from 0 to -350 V by connecting such to an auxiliary r.f. generator (operated at 13.56 MHz). Films were characterized by Fourier Transformed Infrared Spectroscopy (FTIR) and Atomic Force Microscope (AFM). Well-defined peaks at 787 cm-1, 1100 cm-1 and 1387 cm-1, corresponding to the 2Au (out-plane bending of B-N-B bond) h-BN vibration mode, the F2 (stretching) c-BN Transversal Optical (TO) mode and the E1u (in-plane stretching of B-N bond) vibration mode of the h-BN, respectively, were observed in the FTIR spectra. A maximal fraction of the c-BN phase close to 85% was obtained under a bias voltage of -150 V at substrate temperature of 300 °C and a total pressure of 4 × 10-2 mbar.

  16. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

    2016-09-15

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  17. Theoretical Analysis of Thermal Transport in Graphene Supported on Hexagonal Boron Nitride: The Importance of Strong Adhesion Due to π -Bond Polarization

    Science.gov (United States)

    Pak, Alexander J.; Hwang, Gyeong S.

    2016-09-01

    One important attribute of graphene that makes it attractive for high-performance electronics is its inherently large thermal conductivity (κ ) for the purposes of thermal management. Using a combined density-functional theory and classical molecular-dynamics approach, we predict that the κ of graphene supported on hexagonal boron nitride (h -BN) can be as large as 90% of the κ of suspended graphene, in contrast to the significant suppression of κ (more than 70% reduction) on amorphous silica. Interestingly, we find that this enhanced thermal transport is largely attributed to increased lifetimes of the in-plane acoustic phonon modes, which is a notable contrast from the dominant contribution of out-of-plane acoustic modes in suspended graphene. This behavior is possible due to the charge polarization throughout graphene that induces strong interlayer adhesion between graphene and h -BN. These findings highlight the potential benefit of layered dielectric substrates such as h -BN for graphene-based thermal management, in addition to their electronic advantages. Furthermore, our study brings attention to the importance of understanding the interlayer interactions of graphene with layered dielectric materials which may offer an alternative technological platform for substrates in electronics.

  18. High aspect ratio titanium nitride trench structures as plasmonic biosensor

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Repän, Taavi; Takayama, Osamu

    2017-01-01

    High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is deposited at 500 ◦C on a silicon trench template. Silicon between vertical TiN layers is selectively etched...

  19. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  20. Gas phase chemistry in gallium nitride CVD: Theoretical determination of the Arrhenius parameters for the first Ga-C bond homolysis of trimethylgallium.

    Science.gov (United States)

    Schmid, Rochus; Basting, Daniel

    2005-03-24

    Experimental evidence suggests that the energy of activation for the first homolytic Ga-C bond fission of GaMe3 of Ea = 249 kJ/mol, measured by Jacko and Price in a hot-wall tube reactor, is affected by surface catalytic effects. In this contribution, the rate constant for this crucial step in the gas-phase pyrolysis of GaMe3 has been calculated by variational transition state theory. By a basis set extrapolation on the MP2/cc-pVXZ level and a correlation correction from CCSD(T)/cc-pVDZ level, a theoretical "best estimate" for the bond energy of Delta H(289K) = 327.2 kJ/mol was derived. For the VTST calculation on the B3LYP/cc-pVDZ level, the energies were corrected to reproduce this bond energy. Partition functions of the transitional modes were approximated by a hindered rotor approximation to be valid along the whole reaction coordinate defined by the Ga-C bond length. On the basis of the canonical transition state theory, reaction rates were determined using the maxima of the free energy Delta G++. An Arrhenius-type rate law was fitted to these rate constants, yielding an apparent energy of activation of Ea = 316.7 kJ/mol. The preexponential factor A = 3.13 x 10(16) 1/s is an order of magnitude larger than the experimental results because of a larger release of entropy at the transition state as compared to that of the unknown surface catalyzed mechanism.

  1. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  2. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  3. Effect of dangling bonds of ultra-thin silicon film surface on electronic states of internal atoms

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji, E-mail: ejkamiyama@aol.com [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Sueoka, Koji, E-mail: sueoka@c.oka-pu.ac.jp [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2012-04-15

    We investigate how dangling bonds at the surface of ultra-thin films affect electronic states inside the film by first principles calculation. In the calculation models, dangling bonds at the surface are directly treated, and the impact on the electronic states of the internal atoms was estimated. Models with a H-terminated surface at both sides have no state in the bandgap. Whereas, new states appear at around the midgap by removing terminated H at surfaces of one or both sides. These mid-gap states appear at all layers, the states of which decrease as the layer moves away from the surface with dangling bonds. The sum of local DOS corresponds to the number of dangling bonds of the model. If the activation rate is assumed as 2.0 Multiplication-Sign 10{sup -5}, which is an ordinary value of thermal oxide passivation on Si (1 0 0) surface, volume concentration and surface concentration at the 18th layer from the surface in a 36-layer model are estimated to be 1.2 Multiplication-Sign 10{sup 14} cm{sup -3} and 1.5 Multiplication-Sign 10{sup 9} cm{sup -2}, respectively. These numbers are comparable to the values, especially the dopant volume concentration of Si substrate used in current VLSI technology ({approx}10{sup 15} cm{sup -3}). Therefore, the midgap states inside ultra-thin films may degrade performance of the FinFETs.

  4. Research on the Effects of Process Parameters on Surface Roughness in Wet-Activated Silicon Direct Bonding Base on Orthogonal Experiments

    Directory of Open Access Journals (Sweden)

    Lei NIE

    2015-11-01

    Full Text Available Surface roughness is a very important index in silicon direct bonding and it is affected by processing parameters in the wet-activated process. These parameters include the concentration of activation solution, holding time and treatment temperature. The effects of these parameters were investigated by means of orthogonal experiments. In order to analyze the wafer roughness more accurately, the bear ratio of the surface was used as the evaluation index. From the results of the experiments, it could be concluded that the concentration of the activation solution affected the roughness directly and the higher the concentration, the lower the roughness. Holding time did not affect the roughness as acutely as that of the concentration, but a reduced activation time decreased the roughness perceptibly. It was also discovered that the treatment temperature had a weak correlation with the surface roughness. Based on these conclusions, the parameters of concentration, temperature and holding time were optimized respectively as NH4OH:H2O2=1:1 (without water, 70 °C and 5 min. The results of bonding experiments proved the validity of the conclusions of orthogonal experiments.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9711

  5. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  6. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    Science.gov (United States)

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  7. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  8. The preparation and properties of aluminum nitride films

    Science.gov (United States)

    Chu, T. L.; Kelm, R. W., Jr.

    1975-01-01

    Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

  9. Effect of Surface Treatment on the Flexural Strength of Denture Base Resin and Tensile Strength of Autopolymerizing Silicone Based Denture Liner Bonded to Denture Base Resin: An In Vitro Study

    OpenAIRE

    Gupta, Saloni

    2010-01-01

    Silicone based denture liners are superior to acrylic based denture liners but it has a problem of failure of adhesion with the denture base. To evaluate the effect on the tensile bond strength of silicone based liner and flexural strength of denture base resin when the latter is treated with different chemical etchants prior to the application of the resilient liner. Rectangular specimens of heat cured PMMA (65 × 10 × 3.3 mm3) for flexural strength and (10 × 10 × 40 mm3) for tensile strength...

  10. Nanotribological performance of fullerene-like carbon nitride films

    International Nuclear Information System (INIS)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan; Chiñas-Castillo, Fernando; Espinoza-Beltrán, Francisco Javier

    2014-01-01

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp 3 CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp 3 CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery

  11. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  12. Synthesis and characterization of hexagonal boron nitride for integration with graphene electronics

    Science.gov (United States)

    Bresnehan, Michael S.

    Hexagonal boron nitride (h-BN) has attracted increased interest as a dielectric material to graphene electronics. Traditional dielectrics, such as SiO2 or various high-k materials, can introduce scattering from charged surface states, impurities, surface optical phonons, and substrate roughness; significantly degrading the transport properties of graphene. Hexagonal boron nitride boasts several key advantages over SiO2 and high-k dielectrics. Most notably, it exhibits an atomically smooth surface that is expected to be free of dangling bonds, leading to an interface that is relatively free of surface charge traps and adsorbed impurities. Additionally, h- BN's high energy surface optical phonon modes lead to reduced phonon scattering from the dielectric. Using h-BN (grown via CVD on copper foil) as a gate dielectric to quasi-freestanding epitaxial graphene (QFEG) devices, a >2.5x increase in intrinsic current gain cut-off frequency and a >3x increase in mobility over HfO2 gated devices is obtained. In addition, this thesis presents the transfer-free deposition of boron nitride on sapphire and silicon for use as a supporting substrate to CVD-grown graphene. This is accomplished via a polymer-to-ceramic conversion process involving the deposition of polyborazylene at low temperature (≤400°C) and subsequent annealing at 1000°C to BN. Atomic force microscopy (AFM) confirms the deposition of an ultra smooth (RMS roughness CVD graphene transferred to boron nitride films deposited on Al2O3 at a polyborazylene deposition temperature of 400°C is nearly strain-free and results in an improvement in mobility of >1.5x and >2.5x compared to CVD graphene transferred to bare Al2O3 and SiO2, respectively, due to a low impurity density and reduced surface optical phonon scattering.

  13. Experimental Analysis of Bisbenzocyclobutene Bonded Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Manwar, Rayyan; Chowdhury, Sazzadur

    2016-06-24

    Experimental measurement results of a 1.75 mm × 1.75 mm footprint area Capacitive Micromachined Ultrasonic Transducer (CMUT) planar array fabricated using a bisbenzocyclobutene (BCB)-based adhesive wafer bonding technique has been presented. The array consists of 40 × 40 square diaphragm CMUT cells with a cavity thickness of 900 nm and supported by 10 µm wide dielectric spacers patterned on a thin layer of BCB. A 150 µm wide one µm thick gold strip has been used as the contact pad for gold wire bonding. The measured resonant frequency of 19.3 MHz using a Polytec™ laser Doppler vibrometer (Polytec™ MSA-500) is in excellent agreement with the 3-D FEA simulation result using IntelliSuite™. An Agilent ENA5061B vector network analyzer (VNA) has been used for impedance measurement and the resonance and anti-resonance values from the imaginary impedance curve were used to determine the electromechanical coupling co-efficient. The measured coupling coefficient of 0.294 at 20 V DC bias exhibits 40% higher transduction efficiency as compared to a measured value published elsewhere for a silicon nitride based CMUT. A white light interferometry method was used to measure the diaphragm deflection profiles at different DC bias. The diaphragm center velocity was measured for different sub-resonant frequencies using a Polytec™ laser Doppler vibrometer that confirms vibration of the diaphragm at different excitation frequencies and bias voltages. Transmit and receive operations of CMUT cells were characterized using a pitch-catch method and a -6 dB fractional bandwidth of 23% was extracted from the received signal in frequency domain. From the measurement, it appears that BCB-based CMUTs offer superior transduction efficiency as compared to silicon nitride or silicon dioxide insulator-based CMUTs, and provide a very uniform deflection profile thus making them a suitable candidate to fabricate highly energy efficient CMUTs.

  14. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  15. Physical and electrical characteristics of silicon oxynitride films with various refractive indices

    International Nuclear Information System (INIS)

    Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan; Lo, Yun-Shan; Wu, Tai-Bor

    2009-01-01

    This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

  16. A highly integratable silicon thermal gas flow sensor

    Science.gov (United States)

    Palmer, Kristoffer; Kratz, Henrik; Nguyen, Hugo; Thornell, Greger

    2012-06-01

    Thermal flow sensors have been designed, fabricated, and characterized. All bulk material in these devices is silicon so that they are integratable in silicon-based microsystems. To mitigate heat losses and to allow for use of corrosive gases, the heating and sensing thin film titanium/platinum elements, injecting and extracting heat, respectively, from the flow, are placed outside the channel on top of a membrane consisting of alternating layers of stress-balancing silicon dioxide and silicon nitride. For the fabrication, an unconventional bond surface protection method using sputter-deposited aluminum instead of thermal silicon dioxide is used in the process steps prior to silicon fusion bonding. A method for performing lift-off on top of the transparent membrane was also developed. The sensors, measuring 9.5 × 9.5 mm2, are characterized in calorimetric and time-of-flight modes with nitrogen flow rates between 0 sccm and 300 sccm. The maximum calorimetric sensor flow signal and sensitivity are 0.95 mV and 29 µV sccm-1, respectively, with power consumption less than 40 mW. The time-of-flight mode is found to have a wider detectable flow range compared with calorimetric mode, and the time of flight measured indicates a response time of the sensor in the millisecond range. The design and operation of a sensor with high sensitivity and large flow range are discussed. A key element of this discussion is the configuration of the array of heaters and gauges along the channel to obtain different sensitivities and extend the operational range. This means that the sensor can be tailored to different flow ranges.

  17. Positron annihilation in boron nitride

    Directory of Open Access Journals (Sweden)

    N.Amrane

    2006-01-01

    Full Text Available Electron and positron charge densities are calculated as a function of position in the unit cell for boron nitride. Wave functions are derived from pseudopotential band structure calculations and the independent particle approximation (IPM, respectively, for electrons and positrons. It is observed that the positron density is maximum in the open interstices and is excluded not only from ion cores but also to a considerable degree from valence bonds. Electron-positron momentum densities are calculated for (001,110 planes. The results are used in order to analyse the positron effects in BN.

  18. Characterization of a Silicon-Micromachined Thermal Shear-Stress Sensor

    National Research Council Canada - National Science Library

    Sheplak, Mark; Chandrasekaran, Venkataraman; Cain, Anthony; Nishida, Toshikazu; Cattafesta, Louis N

    2002-01-01

    A detailed characterization is presented of a silicon-micromachined thermal shear-stress sensor employing a thin-film platinum-sensing element on top of a silicon-nitride membrane that is stretched over a vacuum cavity...

  19. Contact pin-printing of albumin-fungicide conjugate for silicon nitride-based sensors biofunctionalization: Multi-technique surface analysis for optimum immunoassay performance

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: katarzyna.gajos@doctoral.uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Tsialla, Zoi; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil; Dąbczyński, Paweł [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece)

    2017-07-15

    Highlights: • Contact pin-printing of overlapping probe spots and spotting by hand are compared. • Contact pin-printing favors probe immobilization with two-fold higher surface density. • Incomplete monolayer develops to bilayer as printing solution concentration increases. • Blocking molecules complete probe monolayer but reduce probe bilayer. • Surface immunoreaction increases with probe concentration in printing solution. - Abstract: Mass fabrication of integrated biosensors on silicon chips is facilitated by contact pin-printing, applied for biofunctionalization of individual Si{sub 3}N{sub 4}-based transducers at wafer-scale. To optimize the biofunctionalization for immunochemical (competitive) detection of fungicide thiabendazole (TBZ), Si{sub 3}N{sub 4} surfaces are modified with (3-aminopropyl)triethoxysilane and examined after: immobilization of BSA-TBZ conjugate (probe) from solutions with different concentration, blocking with bovine serum albumin (BSA), and immunoreaction with a mouse monoclonal antibody against TBZ. Nanostructure, surface density, probe composition and coverage uniformity of protein layers are evaluated with Atomic Force Microscopy, Spectroscopic Ellipsometry, Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. Contact pin-printing of overlapping probe spots is compared with hand spotted areas. Contact pin-printing resulted in two-fold increase of immobilized probe surface density as compared to hand spotting. Regarding BSA-TBZ immobilization, an incomplete monolayer develops into a bilayer as the concentration of BSA-TBZ molecules in the printing solution increases from 25 to 100 μg/mL. Upon blocking, however, a complete protein monolayer is formed for all the BSA-TBZ concentrations used. Free surface sites are filled with BSA for low surface coverage with BSA-TBZ, whereas loosely bound BSA-TBZ molecules are removed from the BSA-TBZ bilayer. As a consequence immunoreaction efficiency

  20. A three-mask process for fabricating vacuum-sealed capacitive micromachined ultrasonic transducers using anodic bonding.

    Science.gov (United States)

    Yamaner, F Yalçın; Zhang, Xiao; Oralkan, Ömer

    2015-05-01

    This paper introduces a simplified fabrication method for vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT) arrays using anodic bonding. Anodic bonding provides the established advantages of wafer-bondingbased CMUT fabrication processes, including process simplicity, control over plate thickness and properties, high fill factor, and ability to implement large vibrating cells. In addition to these, compared with fusion bonding, anodic bonding can be performed at lower processing temperatures, i.e., 350°C as opposed to 1100°C; surface roughness requirement for anodic bonding is more than 10 times more relaxed, i.e., 5-nm rootmean- square (RMS) roughness as opposed to 0.5 nm for fusion bonding; anodic bonding can be performed on smaller contact area and hence improves the fill factor for CMUTs. Although anodic bonding has been previously used for CMUT fabrication, a CMUT with a vacuum cavity could not have been achieved, mainly because gas is trapped inside the cavities during anodic bonding. In the approach we present in this paper, the vacuum cavity is achieved by opening a channel in the plate structure to evacuate the trapped gas and subsequently sealing this channel by conformal silicon nitride deposition in the vacuum environment. The plate structure of the fabricated CMUT consists of the single-crystal silicon device layer of a silicon-on-insulator wafer and a thin silicon nitride insulation layer. The presented fabrication approach employs only three photolithographic steps and combines the advantages of anodic bonding with the advantages of a patterned metal bottom electrode on an insulating substrate, specifically low parasitic series resistance and low parasitic shunt capacitance. In this paper, the developed fabrication scheme is described in detail, including process recipes. The fabricated transducers are characterized using electrical input impedance measurements in air and hydrophone measurements in immersion. A representative

  1. Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

    Science.gov (United States)

    Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

    2017-10-19

    Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

  2. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-12-12

    This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxide and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.

  3. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  4. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  5. Synthesis, characterization, and chemical bonding analysis of the lithium alkaline-earth metal gallide nitrides Li{sub 2}(Ca{sub 3}N){sub 2}[Ga{sub 4}] and Li{sub 2}(Sr{sub 3}N){sub 2}[Ga{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Manisha; Bobnar, Matej; Ormeci, Alim; Hoehn, Peter [Chemische Metallkunde, Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Stoiber, Dominik; Niewa, Rainer [Institut fuer Anorganische Chemie, Universitaet Stuttgart (Germany); Ovchinnikov, Alexander [Chemische Metallkunde, Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

    2017-11-17

    Large single crystals of Li{sub 2}(Ca{sub 3}N){sub 2}[Ga{sub 4}] and Li{sub 2}(Sr{sub 3}N){sub 2}[Ga{sub 4}] up to several mm in size were grown from mixtures of the respective elements and binary alkaline-earth metal nitrides in reactive lithium melts employing a modified high-temperature centrifugation-aided filtration (HTCAF) technique. The main structural features of these isotypic phases are stella quadrangula building units [Ga{sub 4}]Li{sub 4/2} and octahedra (Nae{sub 6/2}), which form two independent interpenetrating networks. The phases crystallize in the η-carbide structure and represent diamagnetic small bandgap semiconductors. Real-space chemical bonding analysis indicates predominantly ionic bonding. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Silicone-containing composition

    Science.gov (United States)

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  7. Silicon Oxynitride: A Versatile Material for Integrated Optics Applications

    NARCIS (Netherlands)

    Worhoff, Kerstin; Hilderink, L.T.H.; Driessen, A.; Lambeck, Paul

    Silicon oxynitride is a very attractive material for integrated optics application, because of its excellent optical properties (~e.g. optical loss below 0.2 dB/cm!, the large refractive index range ~between 1.45 for silicon oxide and 2.0 for silicon nitride), and last but not least, the

  8. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  9. Crystallo-chemistry of actinide nitrides (U1-yPuy)N and effect of impurities

    International Nuclear Information System (INIS)

    Beauvy, M.; Coulon-Picard, E.; Pelletier, M.

    2004-01-01

    Investigations on actinide nitrides has been done in our Laboratories for Fast Breeder Reactors since the seventies and some properties are reported to show the interest for these fuels. Today, the actinide nitrides are reconsidered as possible fuels for the future fission reactors (GFR and LMFR selected by the international forum Generation IV). The results of new investigations on crystal structure of mixed mono-nitrides (U,Pu)N, and the effects of oxygen and carbon contaminations on this structure are presented. The cubic 'NaCl-fcc' type structure of actinide nitrides AnN with space group O5/h-Fm3m does not respect the 'Vegard law' model for the mixed nitrides (U 1-y Pu y )N. These nitrides are usually considered with strong metallic character associated with partial ionic bonding, but the ionic contribution in the An-N bonding determined in this work is very important and near 41.6% for UN and PuN. From results published on resistivity of mixed nitrides, the data on bonding must be also modified for partial covalence. This is in good agreement with the experimental lattice parameters which are not compatible with dominant metallic bonding. The numbers of bonding electrons in the nitrides (U 1-y Pu y )N are reevaluated and the low values proposed comparatively with those previously published confirm the strong ionic character with high concentration of An 3+ ions. The solubility of oxygen and carbon in actinide nitrides (U 1-y Pu y )N are discussed from measurements on volume concentration of actinide oxide phase, total oxygen and carbon contents, and lattice parameter of nitrides. The oxygen solubility limit in UN is near 1000 ppm, with a lightly higher value of 1200 ppm for the mixed nitride (U 0.8 Pu 0.2 )N. The effects of oxygen or carbon atoms in the lattice of (U 1-y Pu y )N are analysed

  10. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  11. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  12. Investigation of electronic structure of hexagonal vanadium and niobium carbides and nitrides by MO LCAO method

    International Nuclear Information System (INIS)

    Ivanovskij, A.L.; Gubanov, V.A.; Kurmaev, Eh.Z.

    1985-01-01

    By the MO LCAO cluster method calculations of vanadium and niobium h.c.p. - carbides nitrides are performed. The problems of chemical bonds formation in these phases are investigated, the results are compared with the available spectra of X-ray emission of hexagonal V, Nb carbides and nitrides

  13. Interface traps and dangling-bond defects in (100)Ge/HfO2

    Science.gov (United States)

    Afanas'ev, V. V.; Fedorenko, Y. G.; Stesmans, A.

    2005-07-01

    Combined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the HfO2 and SiO2. No dangling bond centers associated with Ge crystal surface atoms are detected. Only paramagnetic defects in the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric traps related to the dangling bonds (Pb-type centers) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which show no correlation with paramagnetic centers and are resistant to passivation by hydrogen.

  14. Synthesis, reactivity, and electronic structure of molecular uranium nitrides

    OpenAIRE

    Cleaves, Peter A.

    2016-01-01

    The study of metal-ligand multiple bonding offers insight into the electronic structure and bond of metal systems. Until recently, for uranium, such systems were limited to uranyl, and terminal chalcogenide, imide and carbene complexes. In 2012, this was extended to nitrides with the first preparation of a uranium–nitride (U≡N) species isolable under standard conditions, namely [U(TrenTIPS)(N)][Na(12C4)2] (52), which is prepared by the two-electron reduction of sodium azide with a trivalent u...

  15. Cubic and hexagonal boron-nitride (c-BN/h-BN) thin films deposited in situ by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.M.; Zambrano, G.; Baca, E.; Moran, O.; Prieto, P. [Departamento de Fisica, Universidad del Valle, A.A. 25360 Cali (Colombia); Bejarano, G. [Laboratorio de Recubrimientos Duros, CDT-ASTIN SENA, Cali (Colombia)

    2005-07-01

    Cubic boron-nitride (c-BN)/hexagonal boron nitride (h-BN) thin films were grown in situ on (100) oriented silicon substrates by r.f. (13.56 MHz) magnetron sputtering technique. In order to obtain the highest fraction of the c-BN phase, a negative d.c bias voltage, varying from 0 to -200 V was applied to the substrate during deposition. Another set of boron nitride thin films was deposited in situ on (100) oriented silicon substrates under r.f. bias voltage. The substrate holder was biased from 0 to -350 V by connecting such to an auxiliary r.f. generator (operated at 13.56 MHz). Films were characterized by Fourier Transformed Infrared Spectroscopy (FTIR) and Atomic Force Microscope (AFM). Well-defined peaks at 787 cm{sup -1}, 1100 cm{sup -1} and 1387 cm{sup -1}, corresponding to the 2{sub Au} (out-plane bending of B-N-B bond) h-BN vibration mode, the F2 (stretching) c-BN Transversal Optical (TO) mode and the E{sub 1u} (in-plane stretching of B-N bond) vibration mode of the h-BN, respectively, were observed in the FTIR spectra. A maximal fraction of the c-BN phase close to 85% was obtained under a bias voltage of -150 V at substrate temperature of 300 C and a total pressure of 4 x 10{sup -2} mbar. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  17. Superconducting structure with layers of niobium nitride and aluminum nitride

    Science.gov (United States)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  18. Effect of silicon exposure on pyrolysis of preceramic polysilazane

    International Nuclear Information System (INIS)

    Han, H.N.; Lindquist, D.A.; Haggerty, J.S.; Seyferth, D.

    1992-01-01

    Preceramic polysilazane was added to high purity Si powders as a reactive binder during synthesis of reaction bonded Si 3 N 4 parts to improve the defect structures in both the unfired and nitrided parts. This study examined how the presence of Si powder affected the polymer-to-ceramic transformation of the polysilazane. Pyrolysis of both polysilazane and polysilazane + Si samples were characterized by TGA. Also, the gaseous volatiles evolved during pyrolysis were characterized by infrared and mass spectrometry. This paper reports on the results which show that between 100-550 degrees C, silicon powder inhibits the loss of silazane oligomers from the polysilazane. However, for temperatures above 550 degrees C, the weight loss differences between the pure polysilazane and the polysilazane + Si samples were less pronounced. Specific solvents used in the preparation of the polysilazane + Si mixtures affected the quantity and type of species in the volatiles during pyrolysis

  19. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  20. Silicon carbide alloys: Research reports in materials science

    Energy Technology Data Exchange (ETDEWEB)

    Dobson, M.M.

    1986-01-01

    The book draws from work done on other silicon materials, silicon nitrides and sialons, to emphasize the importance of the SiC system. A comprehensive treatment of non-oxide silicon ceramics, this work is of special interest to researchers involved in ceramics, materials science, and high-temperature technology. This book covers the alloys of silicon carbide with aluminum nitride. Crystallography and experimental methods including sample preparation, furnace methods, X-ray and electron diffraction, optical and electron microscopy and chemical analysis are covered.

  1. Effect of surface treatment on the flexural strength of denture base resin and tensile strength of autopolymerizing silicone based denture liner bonded to denture base resin: an in vitro study.

    Science.gov (United States)

    Gupta, Saloni

    2010-12-01

    Silicone based denture liners are superior to acrylic based denture liners but it has a problem of failure of adhesion with the denture base. To evaluate the effect on the tensile bond strength of silicone based liner and flexural strength of denture base resin when the latter is treated with different chemical etchants prior to the application of the resilient liner. Rectangular specimens of heat cured PMMA (65 × 10 × 3.3 mm(3)) for flexural strength and (10 × 10 × 40 mm(3)) for tensile strength were fabricated and divided into four subgroups each. One subgroup of each type acted as a control and the rest were subjected to surface treatment with acetone for 30 s, MMA monomer for 180 s, methylene chloride for 15 s, respectively. Silicone based denture liner was processed between 2 PMMA specimens (10 × 10 × 40 mm(3)) in the space provided by a spacer, thermocycled (5(-)55°C) for 500 cycles and then their tensile strength measurements and flexural strength measurements were done. 180 s of MMA monomer treatment was found to be most effective in improving the bonding between the liner and denture base resin as well as producing the lowest decrease in flexural strength of denture base resin. Chemical treatment of denture base resin improves the bond strength of denture liner but it also decreases the flexural strength of denture base. So careful selection of chemical etchant should be done so as to produce minimum decrease in flexural strength of denture base resin.

  2. Analysis of the properties of silicon nitride based ceramic (Si{sub 3}N{sub 4}) cutting tool using different addictive; Analise das propriedades de ferramenta de corte ceramicas de nitreto de silicio (Si{sub 3}N{sub 4}) usando diferentes aditivos

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Silva, Oliverio Macedo Moreira [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil)

    2013-06-15

    The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si{sub 3}N{sub 4}) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si{sub 3}N{sub 4}) using different additives such as Y{sub 2}O{sub 3}, CeO{sub 2}, Al{sub 2}O{sub 3} , and CTR{sub 2}O{sub 3} in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m{sup 1/2}. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)

  3. Various shapes of silicon freestanding microfluidic channels and microstructures in one-step lithography

    International Nuclear Information System (INIS)

    Pal, Prem; Sato, Kazuo

    2009-01-01

    In this research, we have developed and demonstrated a fabrication method for the formation of various shapes of silicon freestanding microfluidic channels and microstructures in one-step photolithography. The fabrication process utilizes the silicon direct wafer bonding with silicon nitride as an intermediate layer, local oxidation of the silicon (LOCOS) process and wet anisotropic etching. Two different types of etchants (non-ionic surfactant (Triton-X-100) added and pure 25 wt% TMAH solutions) are used in series to perform silicon anisotropic etching. Surfactant-added tetramethyl ammonium hydroxide (TMAH) is employed to define the shapes of the structures, while pure TMAH is used to get high undercutting for their fast releasing. The non-ionic surfactant is preferred considering the complementary metal-oxide semiconductor (CMOS) post process issue of wet anisotropic etching. The undercutting at sharp and rounded concave corners, edges aligned along (1 0 0) directions, is measured and analyzed in both pure and surfactant-added TMAH solutions. Mask design issues that must be taken into consideration for the fabrication of desired shape and size structures are also presented

  4. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

    International Nuclear Information System (INIS)

    Skuridina, D.; Dinh, D.V.; Pristovsek, M.; Lacroix, B.; Chauvat, M.-P.; Ruterana, P.; Kneissl, M.; Vogt, P.

    2014-01-01

    Comprehensive analysis of the surface and crystal properties has been performed at clean c-plane sapphire substrates, sapphire layers after nitridation, and subsequently grown InN layers deposited by metal–organic vapor phase epitaxy. The (1 × 1) surface of clean sapphire reconstructs into a (√(31) × √(31))R ± 9° structure after annealing at 1050 °C, which was performed prior to the nitridation process. The formation of crystalline AlN was observed for nitridation above 800 °C. X-ray photoelectron spectroscopy performed on the nitridated layers shows that N-Al chemical bonds dominate this structure, while the number of N-O bonds is negligibly small. Amorphous AlN x O y layers form during nitridation below 800 °C, where N-O bonds dominate. All layers formed by nitridation show defects associated with N bonds. The morphology of the nitridated layers affects the surface and crystal quality of the subsequently grown polar InN layers. N-polar InN layers with a smooth surface and single crystalline structure were grown on the AlN nitridated layers, while In-polar InN layers with a rough surface and a polycrystalline structure were grown on the amorphous nitridated layers.

  5. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  6. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    International Nuclear Information System (INIS)

    Sarin, V.K.

    1991-01-01

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer

  7. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    Science.gov (United States)

    Sarin, Vinod K.

    1991-01-01

    A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  8. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    Science.gov (United States)

    Sarin, V.K.

    1991-07-30

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  9. Note: Anodic bonding with cooling of heat-sensitive areas

    DEFF Research Database (Denmark)

    Vesborg, Peter Christian Kjærgaard; Olsen, Jakob Lind; Henriksen, Toke Riishøj

    2010-01-01

    Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling heat......-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature....

  10. Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martin-Ramos, Pablo, E-mail: pablomartinramos@gmail.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Correa-Guimaraes, Adriana, E-mail: acg@iaf.uva.es [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martin-Gil, Jesus, E-mail: jesusmartingil@gmail.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2011-11-01

    Highlights: {yields} Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. {yields} The building blocks of carbon nitrides are heptazine nuclei. {yields} Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

  11. Effects of various additives on sintering of aluminum nitride

    Science.gov (United States)

    Komeya, K.; Inoue, H.; Tsuge, A.

    1982-01-01

    Effects of thirty additives on sintering A/N were investigated. The addition of alkali earth oxides and rare earth oxides gave fully densified aluminum nitride. This is due to the formation of nitrogen-containing aluminate liquid in the system aluminum nitride-alkali earth oxides or rare earth oxides. Microstructural studies of the sintered specimens with the above two types of additives suggested that the densification was due to the liquid phase sintering. Additions of silicon compounds resulted in poor densification by the formation of highly refractory compounds such as A/N polytypes.

  12. Solid State Synthesis and Characterization of Carbo-Nitride Materials

    National Research Council Canada - National Science Library

    Khabashesku, Valery

    2000-01-01

    The preparation of stoichiometric sp(sup 2)-bonded amorphous carbon nitride a-C3N4 in gram quantities was successfully achieved by performing a solid-state reaction of cyanuric halides C3N3X3 (X=Cl, F...

  13. Effect of microstructure on the high temperature strength of nitride ...

    Indian Academy of Sciences (India)

    Unknown

    chrome, Model No. Autoscan 60, USA). Existence of phases (α-, β-Si3N4, SiO2, etc) were determined by XRD technique. Both room temperature and high temperature. MOR were determined by 4-point loading in a bending ... Properties of nitride bonded SiC composite materials. Density (g/cm3). Open porosity Mean pore.

  14. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  15. The Effects of Er:YAG, Nd:YAG, and Ho:YAG Laser Surface Treatments to Acrylic Resin Denture Bases on the Tensile Bond Strength of Silicone-Based Resilient Liners.

    Science.gov (United States)

    Gorler, Oguzhan; Dogan, Derya Ozdemir; Ulgey, Melih; Goze, Aysegul; Hubbezoğlu, Ihsan; Zan, Recai; Ozdemir, Ali Kemal

    2015-08-01

    The present study was to assess the effect of surface treatments of Er:YAG, Nd:YAG, and Ho:YAG lasers on the tensile bond strength of a silicone-based resilient liner to an acrylic denture in an in vitro setting. Experimental dumbbell-shaped specimens (75 mm) were produced by combining two acrylate pieces fabricated from heat-polymerized acrylic resin (36 mm) with 3 mm of Molloplast(®)-B filling between them. The specimens (n=200) were randomly divided in half for thermocycling, and each 100 specimen set was randomized into five groups (n=20) with different surface treatments: control (no surface treatment), sandblasting, Er:YAG laser, Nd:YAG laser, and Ho:YAG laser. A tensile bond strength test was performed. The effect of the laser surface treatments was examined with scanning electron microscopy. Only the Er:YAG laser increased the tensile bond strength compared with the other treatments. The other laser groups showed lower bond strengths. The Ho:YAG laser resulted in considerably reduced tensile bond strength. The scanning electron microscopy images showed that applying laser surface treatments modified the surface of the denture base resin. There was not an overall improvement with the use of the studied laser modalities in the adhesion quality of resilient denture liner to acrylic resin, although Er:YAG laser showed a potential to improve their adhesion. These laser modalities need to be subjected to further studies to determine optimal setup for use in prosthodontics.

  16. Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics.

    Science.gov (United States)

    Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M; De Vittorio, Massimo; Rizzi, Francesco

    2017-05-10

    The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, Si x N y /Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described.

  17. Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics

    Science.gov (United States)

    Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M.; De Vittorio, Massimo; Rizzi, Francesco

    2017-01-01

    The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, SixNy/Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described. PMID:28489040

  18. Optical frequency comb generation from aluminum nitride micro-ring resonator

    OpenAIRE

    Jung, Hojoong; Xiong, Chi; Fong, King Y.; Zhang, Xufeng; Tang, Hong X.

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coe...

  19. An All-Integrated Anode via Interlinked Chemical Bonding between Double-Shelled-Yolk-Structured Silicon and Binder for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Yajie; Tai, Zhixin; Zhou, Tengfei; Sencadas, Vitor; Zhang, Jian; Zhang, Lei; Konstantinov, Konstantin; Guo, Zaiping; Liu, Hua Kun

    2017-11-01

    The concept of an all-integrated design with multifunctionalization is widely employed in optoelectronic devices, sensors, resonator systems, and microfluidic devices, resulting in benefits for many ongoing research projects. Here, maintaining structural/electrode stability against large volume change by means of an all-integrated design is realized for silicon anodes. An all-integrated silicon anode is achieved via multicomponent interlinking among carbon@void@silica@silicon (CVSS) nanospheres and cross-linked carboxymethyl cellulose and citric acid polymer binder (c-CMC-CA). Due to the additional protection from the silica layer, CVSS is superior to the carbon@void@silicon (CVS) electrode in terms of long-term cyclability. The as-prepared all-integrated CVSS electrode exhibits high mechanical strength, which can be ascribed to the high adhesivity and ductility of c-CMC-CA binder and the strong binding energy between CVSS and c-CMC-CA, as calculated based on density functional theory (DFT). This electrode exhibits a high reversible capacity of 1640 mA h g -1 after 100 cycles at a current density of 1 A g -1 , high rate performance, and long-term cycling stability with 84.6% capacity retention after 1000 cycles at 5 A g -1 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Structures, Thermochemical Properties, and Bonding of Mixed Alkaline-Earth-Metal Silicon Trimers Si3M(+/0/-) with M = Be, Mg, Ca.

    Science.gov (United States)

    Hang, Tran Dieu; Hung, Huynh Minh; Nguyen, Huyen Thi; Nguyen, Minh Tho

    2015-06-18

    The ground state geometries, electronic structures, and thermochemical properties of binary alkaline-earth-metal silicon clusters Si3M with M = Be, Mg, Ca in neutral, cationic, and anionic states were investigated using quantum chemical computations. Lowest-lying isomers of the clusters were determined on the basis of the composite G4 energies. Along with total atomization energies, thermochemical parameters were determined for the first time by means of the G4 and coupled-cluster theory with complete basis set CCSD(T)/CBS approaches. The most favored equilibrium formation sequences for Si3M clusters emerge as follows: all Si3M(+/0/-) clusters are formed by attaching the M atom into the corresponding cation, neutral and anion silicon trimer Si3(+/0/-), except for the Si3Mg(+) and Si3Ca(+) where the metal cations are bound to the neutral Si3. The resulting mixed tetramers exhibit geometrical and electronic features similar to those of the pure silicon tetramer Si4(+/0/-). Electron localization function (ELF) and ring current analyses point out that the σ-aromatic character of silicon tetramer remains unchanged upon substituting one Si atom by one alkaline-earth-metal atom.

  1. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  2. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  3. Nanopore fabrication in silicon oxynitride membranes by heating Au-particles

    NARCIS (Netherlands)

    de Vreede, Lennart; Schmidt Muniz, M.; van den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    We report the fabrication of nanopores in a silicon oxynitride (SiON) membrane by heating a silicon rich-silicon nitride (SiRN) membrane with a gold nanoparticle array deposited on its surface. The gold nanoparticle array was realized by photolithography and the membrane by wet-etching. The entire

  4. Radiation damage in boron nitride x-ray lithography masks

    International Nuclear Information System (INIS)

    King, P.L.; Pan, L.; Pianetta, P.; Shimkunas, A.; Mauger, P.; Seligson, D.

    1988-01-01

    The optical and mechanical properties of boron nitride vapor deposited at 400 0 C are shown to degrade when exposed to synchrotron radiation. The extent of the damage and the rate at which the damage occurs are similar to that first reported by Johnson et al. Transmission through membranes of boron nitride was measured in situ during exposure to x rays. Membranes darkened considerably with the transmission through a typical membrane falling from 50% to 20% after absorbing ∼250 kJ/cm 3 of x rays. Changes in local film stress were measured with a simple cantilever technique. Films originally in tension (∼5E8 dyne/cm 2 ) were found to become compressive after absorbing 300 kJ/cm 3 of x rays. Both forms of damage responded well to annealing. Fourier transform infrared (FTIR) and near-edge x-ray absorption measurements were made to discern the structural differences between degraded and unexposed films. No significant structural changes were observed. Boron nitride films deposited at higher temperatures (600 0 C) proved to be much less susceptible to radiation damage. In a related development, films produced through the pyrolysis of borazine appeared to be completely immune to radiation damage as were silicon and silicon nitride membranes. FTIR spectra indicate that less hydrogen is present in the 600 0 C chemical-vapor deposition (CVD) and the pyrolytic boron nitride films than in the 400 0 C CVD films. As proposed by Johnson et al., hydrogen is implicated as an intermediary in the boron nitride damage mechanism

  5. Nitriding of high temperature alloys

    International Nuclear Information System (INIS)

    Kiparisov, S.S.; Levinskii, Yu.V.

    This book reviews the nitriding of refractory metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W) and the mechanism involved in this process. Particular attention is paid to the diffusion aspects of nitriding. Application of nitriding to technological processes is also treated. Characteristics of solid solutions and phases in refractory metal-nitrogen systems are mentioned in the text

  6. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  7. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise; Lohwasser, Kristin [DESY, Hamburg (Germany); Blue, Andrew [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

    2016-11-15

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  8. Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel.

    Science.gov (United States)

    Lin, Naiming; Liu, Qiang; Zou, Jiaojuan; Guo, Junwen; Li, Dali; Yuan, Shuo; Ma, Yong; Wang, Zhenxia; Wang, Zhihua; Tang, Bin

    2016-10-27

    Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316), surface-textured 316 (ST-316), and duplex-treated 316 (DT-316) in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si₃N₄ balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication.

  9. Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel

    Directory of Open Access Journals (Sweden)

    Naiming Lin

    2016-10-01

    Full Text Available Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316, surface-textured 316 (ST-316, and duplex-treated 316 (DT-316 in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si3N4 balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication.

  10. Conductive Carbon Nitride for Excellent Energy Storage.

    Science.gov (United States)

    Xu, Jijian; Xu, Feng; Qian, Meng; Xu, Fangfang; Hong, Zhanglian; Huang, Fuqiang

    2017-08-01

    Conductive carbon nitride, as a hypothetical carbon material demonstrating high nitrogen doping, high electrical conductivity, and high surface area, has not been fabricated. A major challenge towards its fabrication is that high conductivity requires high temperature synthesis, but the high temperature eliminates nitrogen from carbon. Different from conventional methods, a facile preparation of conductive carbon nitride from novel thermal decomposition of nickel hydrogencyanamide in a confined space is reported. New developed nickel hydrogencyanamide is a unique precursor which provides self-grown fragments of ⋅NCN⋅ or NCCN and conductive carbon (C-sp 2 ) catalyst of Ni metal during the decomposition. The final product is a tubular structure of rich mesoporous and microporous few-layer carbon with extraordinarily high N doping level (≈15 at%) and high extent of sp 2 carbon (≈65%) favoring a high conductivity (>2 S cm -1 ); the ultrahigh contents of nongraphitic nitrogen, redox active pyridinic N (9 at%), and pyrrolic N (5 at%), are stabilized by forming NiN bonds. The conductive carbon nitride harvests a large capacitance of 372 F g -1 with >90% initial capacitance after 10 000 cycles as a supercapacitor electrode, far exceeding the activated carbon electrodes that have <250 F g -1 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  12. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  13. Exploring the Nature of Silicon-Noble Gas Bonds in H3SiNgNSi and HSiNgNSi Compounds (Ng = Xe, Rn

    Directory of Open Access Journals (Sweden)

    Sudip Pan

    2015-03-01

    Full Text Available Ab initio and density functional theory-based computations are performed to investigate the structure and stability of H3SiNgNSi and HSiNgNSi compounds (Ng = Xe, Rn. They are thermochemically unstable with respect to the dissociation channel producing Ng and H3SiNSi or HSiNSi. However, they are kinetically stable with respect to this dissociation channel having activation free energy barriers of 19.3 and 23.3 kcal/mol for H3SiXeNSi and H3SiRnNSi, respectively, and 9.2 and 12.8 kcal/mol for HSiXeNSi and HSiRnNSi, respectively. The rest of the possible dissociation channels are endergonic in nature at room temperature for Rn analogues. However, one three-body dissociation channel for H3SiXeNSi and one two-body and one three-body dissociation channels for HSiXeNSi are slightly exergonic in nature at room temperature. They become endergonic at slightly lower temperature. The nature of bonding between Ng and Si/N is analyzed by natural bond order, electron density and energy decomposition analyses. Natural population analysis indicates that they could be best represented as (H3SiNg+(NSi− and (HSiNg+(NSi−. Energy decomposition analysis further reveals that the contribution from the orbital term (ΔEorb is dominant (ca. 67%–75% towards the total attraction energy associated with the Si-Ng bond, whereas the electrostatic term (ΔEelstat contributes the maximum (ca. 66%–68% for the same in the Ng–N bond, implying the covalent nature of the former bond and the ionic nature of the latter.

  14. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  15. Detective quantum efficiency, modulation transfer function and energy resolution comparison between CdTe and silicon sensors bump-bonded to XPAD3S.

    Science.gov (United States)

    Medjoubi, Kadda; Bucaille, Thierry; Hustache, Stéphanie; Bérar, Jean François; Boudet, Nathalie; Clemens, Jean Claude; Delpierre, Pierre; Dinkespiler, Bernard

    2010-07-01

    XPAD3S is a single-photon-counting chip developed in collaboration by SOLEIL Synchrotron, the Institut Louis Néel and the Centre de Physique de Particules de Marseille. The circuit, designed in the 0.25 microm IBM technology, contains 9600 square pixels with 130 microm side giving a total size of 1 cm x 1.5 cm. The main features of each pixel are: single threshold adjustable from 4.5 keV up to 35 keV, 2 ms frame rate, 10(7) photons s(-1) mm(-2) maximum local count rate, and a 12-bit internal counter with overflow allowing a full 27-bit dynamic range to be reached. The XPAD3S was hybridized using the flip-chip technology with both a 500 microm silicon sensor and a 700 microm CdTe sensor with Schottky contacts. Imaging performances of both detectors were evaluated using X-rays from 6 keV up to 35 keV. The detective quantum efficiency at zero line-pairs mm(-1) for a silicon sensor follows the absorption law whereas for CdTe a strong deficit at low photon energy, produced by an inefficient entrance layer, is measured. The modulation transfer function was evaluated and it was shown that both detectors present an ideal modulation transfer function at 26 keV, limited only by the pixel size. The influence of the Cd and Te K-edges of the CdTe sensor was measured and simulated, establishing that fluorescence photons reduce the contrast transfer at the Nyquist frequency from 60% to 40% which remains acceptable. The energy resolution was evaluated at 6% with silicon using 16 keV X-rays, and 8% with CdTe using 35 keV X-rays. A 7 cm x 12 cm XPAD3 imager, built with eight silicon modules (seven circuits per module) tiled together, was successfully used for X-ray diffraction experiments. A first result recently obtained with a new 2 cm x 3 cm CdTe imager is also presented.

  16. Influence of Heat-Treatment on the Adhesive Strength between a Micro-Sized Bonded Component and a Silicon Substrate under Bend and Shear Loading Conditions

    International Nuclear Information System (INIS)

    Ishiyama, Chiemi

    2012-01-01

    Adhesive bend and shear tests of micro-sized bonded component have been performed to clarify the relationship between effects of heat-treatment on the adhesive strength and the bonded specimen shape using Weibull analysis. Multiple micro-sized SU-8 columns with four different diameters were fabricated on a Si substrate under the same fabrication condition. Heat-treatment can improve both of the adhesive bend and shear strength. The improvement rate of the adhesive shear strength is much larger than that of the adhesive bend strength, because the residual stress, which must change by heat-treatment, should effect more strongly on the shear loading. In case of bend type test, the adhesive bend strength in the smaller diameters (50 and 75 μm) widely vary, because the critical size of the natural defect (micro-crack) should vary more widely in the smaller diameters. In contrast, in case of shear type test, the adhesive shear strengths in each diameter of the columns little vary. This suggests that the size of the natural defects may not strongly influence on the adhesive shear strength. All the result suggests that both of the adhesive bend and shear strengths should be complicatedly affected by heat-treatment and the bonded columnar diameter

  17. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  18. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. Graphitic Carbon Nitride Materials for Energy Applications

    OpenAIRE

    Belen Jorge, A.; Dedigama, I.; Mansor, N.; Jervis, R.; Corà, F.; McMillan, P. F.; Brett, D.

    2015-01-01

    Polymeric layered carbon nitrides were investigated for use as catalyst support materials for proton exchange membrane fuel cells (PEMFCs) and water electrolyzers (PEMWEs). Three different carbon nitride materials were prepared: a heptazine-based graphitic carbon nitride material (gCNM), poly (triazine) imide carbon nitride intercalated with LiCl component (PTI-Li+Cl-) and boron-doped graphitic carbon nitride (B-gCNM). Following accelerated corrosion testing, all graphitic carbon nitride mate...

  20. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    Directory of Open Access Journals (Sweden)

    Ichiro Yonenaga

    2015-07-01

    Full Text Available The hardness of wurtzite indium nitride (α-InN films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001- and N ( 000 1 ̄ -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.