Imprinting of slip bands in mechanically deformed MgO crystals using lithium impurities

Energy Technology Data Exchange (ETDEWEB)

Orera, V M; Chen, Y; Abraham, M M

1980-01-01

Lithium impurities in MgO can be used to imprint slip bands produced by plastic deformation. The imprinting is obtained by means of (Li)/sup 0/ defects (subtitutional Li/sup +/ ions each with an adjacent O/sup -/ ion) which absorb light at 680 nm (1.8 eV). Slip bands are observed as discolored regions against the background of dark blue coloration due to these defects. The decoloration can be achieved by two different processes: either by oxidation at 1275 K of a deformed crystal, or by the reverse procedure - deformation of a previously oxidized crystal. The mechanisms involved in the decoloration are different; the former is due to ionic motion, and the latter is an electronic effect. Similar procedures involving surface indentation by sharp objects also result in decoloration patterns.

Dynamics of Impurity and Valence Bands in Ga_1-xMn_zAs Within the Dynamical Mean Field Approximation

Energy Technology Data Exchange (ETDEWEB)

Majidi, M. A. [University of Cincinnati; Moreno, Juana [University of North Dakota, Grand Forks; Jarrell, Mark [University of Cincinnati; Fishman, Randy Scott [ORNL; Aryanpour, K. A. [University of California, Davis

2006-01-01

We calculate the density-of-states and the spectral function of Ga{sub 1-x}Mn{sub x}As within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling J{sub c} at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

Boron, nitrogen, and nickel impurities in GeC nanoribbons: A first-principles investigation

Energy Technology Data Exchange (ETDEWEB)

Xu, Zhuo; Li, Yangping, E-mail: liyp@nwpu.edu.cn; Liu, Zhengtang

2017-07-01

Highlights: • The impurities preferentially substitutes the Ge atom at the ribbon edge. • The impurities could result in a reduction of the band gap of 7-AGeCNR. • The impurities turns the metallic behavior of 4-ZGeCNR into semiconductor. • The impurities could change the magnetic moment of 4-ZGeCNR. • The impurities could introduce magnetic moments into the non-magnetic 7-AGeCNR. - Abstract: Using first-principles calculations based on the density functional theory we investigated the structural, electronic and magnetic properties of substitutional boron, nitrogen, and nickel impurities in germanium carbide (GeC) nanoribbons. Hydrogen terminated GeC ribbons with armchair and zigzag edges are considered here. We observed that all three impurities preferentially substitutes the Ge atom at the ribbon edge. In addition, the electronic band structures of the doped systems indicate that (i) the impurities could introduce impurity bands in the band gap and resulting in a reduction of the band gap of 7-AGeCNR, (ii) the metallic behavior of 4-ZGeCNR turns into semiconductor because of the incorporation of the impurities, (iii) the impurities could change the magnetic moment of 4-ZGeCNR and even introduce magnetic moment into the non-magnetic 7-AGeCNR.

The effect of impurities on the electronic properties of MgO

Energy Technology Data Exchange (ETDEWEB)

Jalili, Seifollah [Department of Chemistry, K.N. Toosi University of Technology, P.O. Box 16315-1618, Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of)], E-mail: sjalili@nano.ipm.ac.ir; Majidi, Roya [Department of Physics, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

2008-10-01

The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively.

The effect of impurities on the electronic properties of MgO

International Nuclear Information System (INIS)

Jalili, Seifollah; Majidi, Roya

2008-01-01

The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively

In-Band Interference Effects on UTRA LTE Uplink Resource Block Allocation

DEFF Research Database (Denmark)

Priyanto, Basuki Endah; Sørensen, Troels Bundgaard; Jensen, Ole Kiel

2008-01-01

In this paper we investigate the impact of in-band interference on the uplink multiple access of UMTS Terrestrial Radio Access, long term evolution (UTRA LTE). In- band and out-of-band interference arise as a result of transmitter imperfections. Out-of- band, or adjacent channel, interference can......, and when the interfering signal is received at higher power spectral density (PSD). The effect of frequency offset and different PSD level from the UE interferers to a victim UE is studied. The impact on different UE resource block size allocation is also investigated. The results are obtained from an LTE...

Impurities block the alpha to omega martensitic transformation in titanium.

Science.gov (United States)

Hennig, Richard G; Trinkle, Dallas R; Bouchet, Johann; Srinivasan, Srivilliputhur G; Albers, Robert C; Wilkins, John W

2005-02-01

Impurities control phase stability and phase transformations in natural and man-made materials, from shape-memory alloys to steel to planetary cores. Experiments and empirical databases are still central to tuning the impurity effects. What is missing is a broad theoretical underpinning. Consider, for example, the titanium martensitic transformations: diffusionless structural transformations proceeding near the speed of sound. Pure titanium transforms from ductile alpha to brittle omega at 9 GPa, creating serious technological problems for beta-stabilized titanium alloys. Impurities in the titanium alloys A-70 and Ti-6Al-4V (wt%) suppress the transformation up to at least 35 GPa, increasing their technological utility as lightweight materials in aerospace applications. These and other empirical discoveries in technological materials call for broad theoretical understanding. Impurities pose two theoretical challenges: the effect on the relative phase stability, and the energy barrier of the transformation. Ab initio methods calculate both changes due to impurities. We show that interstitial oxygen, nitrogen and carbon retard the transformation whereas substitutional aluminium and vanadium influence the transformation by changing the d-electron concentration. The resulting microscopic picture explains the suppression of the transformation in commercial A-70 and Ti-6Al-4V alloys. In general, the effect of impurities on relative energies and energy barriers is central to understanding structural phase transformations.

Exact solution of corner-modified banded block-Toeplitz eigensystems

International Nuclear Information System (INIS)

Cobanera, Emilio; Alase, Abhijeet; Viola, Lorenza; Ortiz, Gerardo

2017-01-01

Motivated by the challenge of seeking a rigorous foundation for the bulk-boundary correspondence for free fermions, we introduce an algorithm for determining exactly the spectrum and a generalized-eigenvector basis of a class of banded block quasi-Toeplitz matrices that we call corner-modified . Corner modifications of otherwise arbitrary banded block-Toeplitz matrices capture the effect of boundary conditions and the associated breakdown of translational invariance. Our algorithm leverages the interplay between a non-standard, projector-based method of kernel determination (physically, a bulk-boundary separation) and families of linear representations of the algebra of matrix Laurent polynomials. Thanks to the fact that these representations act on infinite-dimensional carrier spaces in which translation symmetry is restored, it becomes possible to determine the eigensystem of an auxiliary projected block-Laurent matrix. This results in an analytic eigenvector Ansatz , independent of the system size, which we prove is guaranteed to contain the full solution of the original finite-dimensional problem. The actual solution is then obtained by imposing compatibility with a boundary matrix , whose shape is also independent of system size. As an application, we show analytically that eigenvectors of short-ranged fermionic tight-binding models may display power-law corrections to exponential behavior, and demonstrate the phenomenon for the paradigmatic Majorana chain of Kitaev. (paper)

SINGLE-BAND, TRIPLE-BAND, OR MULTIPLE-BAND HUBBARD MODELS

NARCIS (Netherlands)

ESKES, H; SAWATZKY, GA

1991-01-01

The relevance of different models, such as the one-band t-J model and the three-band Emery model, as a realistic description of the electronic structure of high-T(c) materials is discussed. Starting from a multiband approach using cluster calculations and an impurity approach, the following

Spectroscopic studies of carbon impurities in PISCES-A

International Nuclear Information System (INIS)

Ra, Y.; Hirooka, Y.; Leung, W.K.; Conn, R.W.; Pospieszczyk, A.

1989-08-01

The graphite used for the limiter of the tokamak reactor produces carbon-containing molecular impurities as a result of the interactions with the edge plasma. The behavior of these molecular impurities has been studied using emission spectroscopy. The present study includes: finding molecular bands and atomic lines in the visible spectral range which can be used for the study of the molecular impurities, studying the breakup processes of the molecular impurities on their way from the source into the plasma, developing a spectroscopic diagnostic method for the absolute measurement of the molecular impurity flux resulting from graphite erosion. For these studies, carbon-containing molecules such as CH 4 , C 2 H 2 , C 2 H 4 , and CO 2 were injected into the tokamak-boundary,like plasma generated by PISCES-A. The spectrograms of these gases were taken. Many useful bands and lines were determined from the spectrograms. The breakup processes of these gases were studied by observing the spatial profiles of the emission of the molecules and their radicals for different plasma conditions. For the absolute measurement of the eroded molecular impurity flux, the photon efficiency of the lines and bands were found by measuring the absolute number of the emitted photons and injected gas molecules. The chemical sputtering yield of graphite by hydrogen plasma was spectroscopically measured using the previously obtained photon efficiencies. It showed good agreement with results obtained by weight loss measurements. 16 refs., 7 figs., 1 tab

Scattering of waves by impurities in precompressed granular chains.

Science.gov (United States)

Martínez, Alejandro J; Yasuda, Hiromi; Kim, Eunho; Kevrekidis, P G; Porter, Mason A; Yang, Jinkyu

2016-05-01

We study scattering of waves by impurities in strongly precompressed granular chains. We explore the linear scattering of plane waves and identify a closed-form expression for the reflection and transmission coefficients for the scattering of the waves from both a single impurity and a double impurity. For single-impurity chains, we show that, within the transmission band of the host granular chain, high-frequency waves are strongly attenuated (such that the transmission coefficient vanishes as the wavenumber k→±π), whereas low-frequency waves are well-transmitted through the impurity. For double-impurity chains, we identify a resonance-enabling full transmission at a particular frequency-in a manner that is analogous to the Ramsauer-Townsend (RT) resonance from quantum physics. We also demonstrate that one can tune the frequency of the RT resonance to any value in the pass band of the host chain. We corroborate our theoretical predictions both numerically and experimentally, and we directly observe almost complete transmission for frequencies close to the RT resonance frequency. Finally, we show how this RT resonance can lead to the existence of reflectionless modes in granular chains (including disordered ones) with multiple double impurities.

Impurity-induced anisotropic semiconductor-semimetal transition in monolayer biased black phosphorus

Science.gov (United States)

Bui, D. H.; Yarmohammadi, Mohsen

2018-07-01

Taking into account the electron-impurity interaction within the continuum approximation of tight-binding model, the Born approximation, and the Green's function method, the main features of anisotropic electronic phase transition are investigated in monolayer biased black phosphorus (BP). To this end, we concentrated on the disordered electronic density of states (DOS), which gives useful information for electro-optical devices. Increasing the impurity concentration in both unbiased and biased impurity-infected single-layer BP, in addition to the decrease of the band gap, independent of the direction, leads to the midgap states and an extra Van Hove singularity inside and outside of the band gap, respectively. Furthermore, strong impurity scattering potentials lead to a semiconductor-semimetal transition and one more Van Hove singularity in x-direction of unbiased BP and surprisingly, this transition does not occur in biased BP. We found that there is no phase transition in y-direction. Since real applications require structures with modulated band gaps, we have studied the influence of different bias voltages on the disordered DOS in both directions, resulting in the increase of the band gap.

Local order dependent impurity levels in alloy semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da; Ecole Normale Superieure, 75 - Paris

1981-01-01

We develop a one band/may sites model for an isoelectronic impurity in a semiconductor alloy. The cluster-Bethe-lattice approximation is used to study the dependence of the impurity energy level upon the short range order (SRO) of the alloy. The Kikuchi parametrization is used to describe the latter. We take into account diagonal disorder only, with possible off-diagonal relaxation around the impurity site. All the inequivalent clusters of the impurity site and its first nearest neighbours are considered, thus including the important short range alloy potential fluctuations. Results are presented for the local density of impurity states, for different degrees of SRO in the alloy. (Author) [pt

Impurity binding energy for δ-doped quantum well structures

Indian Academy of Sciences (India)

Administrator

Calculations are made for the case of not so big impurity concentrations, when impurity bands are not .... Blom et al (2003), but our data correspond qualitatively to Bastard's .... 0113U000612 and by Ukrainian Ministry of Education and Science ...

Germanium blocked impurity band far infrared detectors

International Nuclear Information System (INIS)

Rossington, C.S.

1988-04-01

The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration

Microscopic models of impurities in silicon

International Nuclear Information System (INIS)

Assali, L.V.C.

1985-01-01

The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

On the impact of isoelectric impurities on band bowing and disorder of compound semiconductors; Ueber den Einfluss von isoelektronischen Stoerstellen auf Bandbiegung und Unordnung in Verbindungshalbleitern

Energy Technology Data Exchange (ETDEWEB)

Karcher, Christian

2012-03-16

Isolectronic impurities and their impact on the properties of compound semiconductors is discussed in two systems: Nitrogen in Ga(As,P) quantum wells on the one hand and Sulfur and Selenium in bulk ZnTe. The properties are reduced to two experimentally observable aspects: Band Bowing, i.e. the non-linearity of the band gap of the compound semiconductor and disorder, i.e. in particular the formation of a strongly localized density of states beneath the fundamental band gap. Apart of the pure experimental studies an insight into the theoretical model of disorder-induced temperature dependent luminescence properties of the compound semiconductors by means of Monte Carlo Simulations is given.

The electronic structure of impurities in semiconductors

CERN Multimedia

Nylandsted larsen, A; Svane, A

2002-01-01

The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

Energy Technology Data Exchange (ETDEWEB)

Savinov, S. V.; Oreshkin, A. I., E-mail: oreshkin@spmlab.phys.msu.su, E-mail: oreshkin@spmlab.ru [Moscow State University (Russian Federation); Oreshkin, S. I. [Moscow State University, Sternberg Astronomical Institute (Russian Federation); Haesendonck, C. van [Laboratorium voor Stoffysica en Magnetisme (Belgium)

2015-06-15

We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface might produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.

Band selection and disentanglement using maximally localized Wannier functions: the cases of Co impurities in bulk copper and the Cu(111) surface

Energy Technology Data Exchange (ETDEWEB)

Korytar, Richard; Pruneda, Miguel; Ordejon, Pablo; Lorente, Nicolas [Centre d' Investigacio en Nanociencia i Nanotecnologia (CSIC-ICN), Campus de la UAB, E-08193 Bellaterra (Spain); Junquera, Javier, E-mail: rkorytar@cin2.e [Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, E-39005 Santander (Spain)

2010-09-29

We have adapted the maximally localized Wannier function approach of Souza et al (2002 Phys. Rev. B 65 035109) to the density functional theory based SIESTA code (Soler et al 2002 J. Phys.: Condens. Mater. 14 2745) and applied it to the study of Co substitutional impurities in bulk copper as well as to the Cu(111) surface. In the Co impurity case, we have reduced the problem to the Co d-electrons and the Cu sp-band, permitting us to obtain an Anderson-like Hamiltonian from well defined density functional parameters in a fully orthonormal basis set. In order to test the quality of the Wannier approach to surfaces, we have studied the electronic structure of the Cu(111) surface by again transforming the density functional problem into the Wannier representation. An excellent description of the Shockley surface state is attained, permitting us to be confident in the application of this method to future studies of magnetic adsorbates in the presence of an extended surface state.

Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD

Energy Technology Data Exchange (ETDEWEB)

El Ghazi, Haddou, E-mail: hadghazi@gmail.com [LPS, Faculty of Science, Dhar El Mehrez, BP 1796 Fes-Atlas (Morocco); Special Mathematics, CPGE My Youssef, Rabat (Morocco); Jorio, Anouar [LPS, Faculty of Science, Dhar El Mehrez, BP 1796 Fes-Atlas (Morocco)

2014-10-01

By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherical quantum dot. For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity's position and relaxation time effects are investigated. It is found that the modulation of the refractive index changes, suitable for good performance optical modulators and various infra-red optical device applications can be easily obtained by tailoring the relaxation time and the position of the impurity.

Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD

International Nuclear Information System (INIS)

El Ghazi, Haddou; Jorio, Anouar

2014-01-01

By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherical quantum dot. For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity's position and relaxation time effects are investigated. It is found that the modulation of the refractive index changes, suitable for good performance optical modulators and various infra-red optical device applications can be easily obtained by tailoring the relaxation time and the position of the impurity

Numerical simulation of the impurity photovoltaic effect in silicon solar cells doped with thallium

International Nuclear Information System (INIS)

Zhao Baoxing; Zhou Jicheng; Chen Yongmin

2010-01-01

Many attempts have been made to increase the efficiency of solar cells by introducing a deep impurity level in the semiconductor band gap. Since Tl may be the most suitable impurity for crystalline Si solar cells, the impurity photovoltaic (IPV) effect in silicon solar cell doped with thallium as impurity was investigated by the numerical solar cell simulator SCAPS. Results show that the IPV effect of thallium extends the spectral sensitivity in the sub-band gap range from 1000 to about 1400 nm. When the Tl concentration (N t ) is lower than the base doping density (N D ), the short-circuit current density and efficiency increase with increasing N t . But they decrease rapidly as the impurity density exceeds the shallow base doping density (N t >N D ). The optimum Tl concentration is about equal to the base doping density. For the Si solar cells with high internal reflection coefficients, the IPV effect becomes appreciable (ΔJ sc ∼9 mA/cm 2 and Δη∼2%).

Hyperfine Fields on Actinide Impurities in Ferromagnetic Fe and Ni Hosts

International Nuclear Information System (INIS)

Oliveira, A.L. de; Oliveira, N.A. de; Troper, A.

2003-01-01

We discuss the local magnetic moments and magnetic hyperfine fields on actinide impurities diluted in Fe and Ni hosts. One adopts a Anderson- Moriya model in which a localized 5f level is hybridized with a spin polarized and charge perturbed d-conduction band. Our self-consistent numerical calculations for the hyperfine fields on the impurity sites are in good agreement with the available experimental data. (author)

Effects of quenched impurities on surface diffusion, spreading, and ordering of O/W(110)

DEFF Research Database (Denmark)

Nikunen, P.; Vattulainen, Ilpo Tapio; Ala-Nissila, T.

2002-01-01

We study how quenched impurities affect the surface diffusion and ordering of strongly interacting adsorbate atoms on surfaces. To this end, we carry out Monte Carlo simulations for a lattice-gas model of O/W(110), including small concentrations of immobile impurities which block their adsorption...

Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

Science.gov (United States)

Cortés, Natalia; Rosales, Luis; Orellana, Pedro A; Ayuela, Andrés; González, Jhon W

2018-02-01

We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS 2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

Light impurity production in tokamaks

International Nuclear Information System (INIS)

Philipps, V.; Vietzke, E.; Erdweg, M.

1989-01-01

A review is given of the different erosion processes of carbon materials with special emphasis on conditions relevant to plasma surface interactions. New results on the chemical erosion and radiation enhanced sublimation of boron-carbon layers are presented. The chemical hydrocarbon formation produced by the interaction of the TEXTOR scrape-off plasma with a carbon target has been investigated up to temperatures of 1500K using a Sniffer probe. The chemical interaction of the plasma with the carbon walls in TEXTOR is also analysed by measuring the hydrocarbon and CO and CO 2 partial pressures built up on the surrounding walls during the discharges. The recycling of oxygen impurities in an all carbon surrounding occurs predominantly in the form of CO and Co 2 molecules and the analysis of both neutral pressures during the discharges has been used as an additional diagnostic for the oxygen impurity situation in TEXTOR. These data are discussed in view of spectroscopic measurements on the influx of carbon and oxygen atoms from the walls and impurity line radiation. CD-band spectroscopy in addition is employed to identify the hydrocarbon chemical carbon erosion. Our present understanding of the oxygen impurity recycling and the oxygen sources are described. Particle induced release of CO molecules from the entire first wall is believed to be the dominant influx process of oxygen in the SOL of plasmas with carbon facing materials. The influence of coating the TEXTOR first wall with a boron-carbon film (B/C ≅1) on the light impurity behaviour is shown. (author)

Band structures of phononic crystal composed of lattices with different periodic constants

International Nuclear Information System (INIS)

Hu, Jia-Guang; Xu, Wen

2014-01-01

With a square lattice mercury and water system being as the model, the band structures of nesting and compound phononic crystals with two different lattice constants were investigated using the method of the supercell plane wave expansion. It was observed that large band gaps can be achieved in low frequency regions by adjusting one of the lattice constants. Meanwhile, effects similar to interstitial impurity defects can be achieved with the increase of lattice constant of the phononic crystal. The corresponding defect modes can be stimulated in band gaps. The larger the lattice constant, the stronger the localization effect of defect modes on the wave. In addition, the change of the filling fraction of impurity exerts great influence on the frequency and localization of defect modes. Furthermore, the change of the position of impurity has notable influence on the frequency of defect modes and their localization. However, the geometry structure and orientation of impurity have little effect on the frequency of defect modes and their localization in the band gap.

Resonant scattering on impurities in the quantum Hall effect

International Nuclear Information System (INIS)

Gurvitz, A.

1994-06-01

We developed a new approach to carrier transport between the edge states via resonant scattering on impurities, which is applicable both for short and long range impurities. A detailed analysis of resonant scattering on a single impurity is performed. The results used for study of the inter-edge transport by multiple resonant hopping via different impurities' site. We found the total conductance can be obtained from an effective Schroedinger equation with constant diagonal matrix elements in the Hamiltonian, where the complex non-diagonal matrix elements are the amplitudes of a carrier hopping between different impurities. It is explicitly shown how the complex phase leads to Aharonov-Bohm oscillations in the total conductance. Neglecting the contribution of self-crossing resonant-percolation trajectories, we found that the inter-edge carrier transport is similar to propagation in one-dimensional system with off-diagonal disorder. Then we demonstrated that each Landau band has an extended state Ε Ν , while all other states are localized, and the localization length behaves as L - 1 Ν (Ε) ∼ (Ε - Ε Ν ) 2 . (author)

Topological phase, electronic, magnetic and optical properties of ScPdBi compound with Gd, Np and Cm impurities

Energy Technology Data Exchange (ETDEWEB)

Narimani, Mitra; Nourbakhsh, Zahra, E-mail: z.nourbakhsh@sci.ui.ac.ir

2017-07-15

Highlights: • Gd, Np and Cm impurities induce the magnetic moment in ScPdBi compound. • ScPdBi compound with Gd, Np and Cm impurities has normal band order. • The ε(0) and R(0) increase by increasing the atomic number of X atom. - Abstract: The electronic, magnetic and optical properties of X-doped ScPdBi (X = Gd, Np, Cm) are investigated in the framework of density functional theory. The exchange-correlation potential is treated using generalized gradient approximation with Coulomb interaction parameter. The band order and energy band gap of X-doped ScPdBi are investigated by calculation of band structure. The effect of doping impurity on magnetic properties of ScPdBi compound is studied by calculation of total and partial magnetic moments of X-doped ScPdBi compound. Furthermore, the optical properties of X-doped ScPdBi are calculated and compared in the energy range of 0–25 eV.

Full color stop bands in hybrid organic/inorganic block copolymer photonic gels by swelling-freezing.

Science.gov (United States)

Kang, Changjoon; Kim, Eunjoo; Baek, Heeyoel; Hwang, Kyosung; Kwak, Dongwoo; Kang, Youngjong; Thomas, Edwin L

2009-06-10

We report a facile way of fabricating hybrid organic/inorganic photonic gels by selective swelling and subsequent infiltration of SiO(2) into one type of lamellar microdomain previously self-assembled from modest-molecular-weight block copolymers. Transparent, in-plane lamellar films were first prepared by assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP), and subsequently the P2VP domains were swollen with a selective solvent, methanol. The swollen structures were then fixated by synthesizing SiO(2) nanoparticles within P2VP domains. The resulting frozen photonic gels (f-photonic gels) exhibited strong reflective colors with stop bands across the visible region of wavelengths.

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

Science.gov (United States)

Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

2016-12-01

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

Effect of divalent impurities on some physical properties of LiF and NaF

International Nuclear Information System (INIS)

Laj, C.

1969-05-01

The ionic thermo-currents technique is applied to the study of impurity vacancy dipoles in LiF and NaF doped with several divalent cations. In LiF only one ITC band is observed whatever the impurity studied. In NaF on the contrary two ITC bands are present, one corresponding to the one observed in LiF, the other one, intense in the case of small impurities, at lower temperature. A parallel EPR study in the case of Mn 2+ doped samples shows that the band observed in LiF and the corresponding one in NaF are due to the relaxation of dipoles formed by the association of an impurity and a vacancy in the next nearest position. The knowledge of the properties of the dipoles allows to show that the room temperature ionic conductivity of LiF is conditioned by the equilibrium: M ++ □+ → M ++ + □+. It is also shown that the isolated cation vacancy originating from this dissociation is responsible for the enhancement of γ-ray coloration of LiF doped with divalent cation impurities. A paramagnetic center ascribed to the presence of Mn 0 isolated in the lattice is also studied. The value of the hyperfine interaction and its temperature dependence are in good agreement with both the theory and the other experimental results. Finally it is shown that the disappearance of dipoles by annealing is related to the formation of complexes involving OH - ions, probably of the M(OH) 2 type, with the two OH - ions occupying a single fluorine site. (author) [fr

Impurity doping effects on the orbital thermodynamic properties of hydrogenated graphene, graphane, in Harrison model

Science.gov (United States)

Yarmohammadi, Mohsen

2016-12-01

Using the Harrison model and Green's function technique, impurity doping effects on the orbital density of states (DOS), electronic heat capacity (EHC) and magnetic susceptibility (MS) of a monolayer hydrogenated graphene, chair-like graphane, are investigated. The effect of scattering between electrons and dilute charged impurities is discussed in terms of the self-consistent Born approximation. Our results show that the graphane is a semiconductor and its band gap decreases with impurity. As a remarkable point, comparatively EHC reaches almost linearly to Schottky anomaly and does not change at low temperatures in the presence of impurity. Generally, EHC and MS increases with impurity doping. Surprisingly, impurity doping only affects the salient behavior of py orbital contribution of carbon atoms due to the symmetry breaking.

Formation of dust grains with impurities in red giant winds

Science.gov (United States)

Dominik, Carsten

1994-01-01

Among the several proposed carriers of diffuse interstellar bands (DIB's) are impurities in small dust grains, especially in iron oxide grains (Huffman 1977) and silicate grains (Huffman 1970). Most promising are single ion impurities since they can reproduce the observed band widths (Whittet 1992). These oxygen-rich grains are believed to originate mostly in the mass flows from red giants and in supernovae ejecta (e.g. Gehrz 1989). A question of considerable impact for the origin of DIB's is therefore, whether these grains are produced as mainly clean crystals or as some dirty materials. A formalism has been developed that allows tracking of the heterogeneous growth of a dust grain and its internal structure during the dust formation process. This formalism has been applied to the dust formation in the outflow from a red giant star.

Electronic structure and magnetic properties of dilute U impurities in metals

Science.gov (United States)

Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

2016-05-01

The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

Properties of magnetic impurities embedded into an anisotropic Heisenberg chain with spin gap

International Nuclear Information System (INIS)

Schlottmann, P.

2000-01-01

We consider a U(1)-invariant model consisting of the integrable anisotropic easy-axis Heisenberg chain of arbitrary spin S embedding an impurity of spin S'. The host chain has a spin gap for all values of S. The ground state properties and the elementary excitations of the host are studied as a function of the anisotropy and the magnetic field. The impurity is located on a link of the chain and interacts only with both neighboring sites. The coupling of the impurity to the lattice can be tuned by the impurity rapidity p 0 (usually playing the role of the Kondo coupling). The impurity model is then integrable as a function of two continuous parameters (the anisotropy and the impurity rapidity) and two discrete variables (the spins S and S'). The Bethe ansatz equations are derived and used to obtain the magnetization of the impurity. The impurity magnetization is non-universal as a function of p 0 . For small fields the impurity magnetization is determined by the spin gap and the van Hove singularity of the rapidity band. For an overcompensated impurity (S'< S) at intermediate fields there is a crossover to non-Fermi-liquid behavior remnant from the suppressed quantum critical point

CT-QMC-simulations on the single impurity Anderson model with a superconducting bath

Energy Technology Data Exchange (ETDEWEB)

Sohn, Florian; Pruschke, Thomas [Institut fuer theoretische Physik, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

2016-07-01

Coupling a heavy fermion impurity to a superconducting lead induces a competition between the Kondo effect and superconductivity in the low temperature regime. This situation has been modeled with a single impurity Anderson model, where the normal state bath is replaced by a BCS-type superconducting bath in mean field approximation. We study this model using a continuous-time quantum Monte Carlo hybridization expansion algorithm. Results include the impurity Green's functions as well as the corresponding spectral functions obtained from analytic continuation. Two side bands are observed which we discuss in the light of Yu-Shiba-Rusinov states.

Impurity sources in TEXTOR

Energy Technology Data Exchange (ETDEWEB)

Pospieszczyk, A; Bay, H L; Bogen, P; Hartwig, H; Hintz, E; Koenen, L; Ross, G G; Rusbueldt, D; Samm, U; Schweer, B

1987-02-01

The deuterium, oxygen and carbon fluxes from the main limiter and the deuterium fluxes from the wall are measured in TEXTOR for an 'all carbon' surrounding as a function of central density n/sub e/, of applied ICRH-power and of different wall conditions (carbonization). For this purpose, emission spectroscopy both with filter systems and spectrometers has been used. It is found that a major release mechanism for light impurities is via the formation of molecules. Oxygen seems to enter the discharge from the liner via O-D containing molecules, whereas the limiter acts as the main carbon source by the release of hydro-carbons as indicated by the observed CD-band spectra. Both oxygen and carbon fluxes are reduced by about a factor of two after a fresh carbonization. Above a certain critical density the plasma detaches from the limiter and forms a stable discharge with a radiation cooled boundary layer and with a major fraction of particles now reaching the wall instead of the limiter. The critical density rises with decreasing impurity fluxes or with increasing heating powers.

Impurity sources in TEXTOR

International Nuclear Information System (INIS)

Pospieszczyk, A.; Bay, H.L.; Bogen, P.; Hartwig, H.; Hintz, E.; Koenen, L.; Ross, G.G.; Rusbueldt, D.; Samm, U.; Schweer, B.

1987-01-01

The deuterium, oxygen and carbon fluxes from the main limiter and the deuterium fluxes from the wall are measured in TEXTOR for an 'all carbon' surrounding as a function of central density n e , of applied ICRH-power and of different wall conditions (carbonization). For this purpose, emission spectroscopy both with filter systems and spectrometers has been used. It is found that a major release mechanism for light impurities is via the formation of molecules. Oxygen seems to enter the discharge from the liner via O-D containing molecules, whereas the limiter acts as the main carbon source by the release of hydro-carbons as indicated by the observed CD-band spectra. Both oxygen and carbon fluxes are reduced by about a factor of two after a fresh carbonization. Above a certain critical density the plasma detaches from the limiter and forms a stable discharge with a radiation cooled boundary layer and with a major fraction of particles now reaching the wall instead of the limiter. The critical density rises with decreasing impurity fluxes or with increasing heating powers. (orig.)

Insulator-semimetallic transition in quasi-1D charged impurity-infected armchair boron-nitride nanoribbons

Science.gov (United States)

Dinh Hoi, Bui; Yarmohammadi, Mohsen

2018-04-01

We address control of electronic phase transition in charged impurity-infected armchair-edged boron-nitride nanoribbons (ABNNRs) with the local variation of Fermi energy. In particular, the density of states of disordered ribbons produces the main features in the context of pretty simple tight-binding model and Green's functions approach. To this end, the Born approximation has been implemented to find the effect of π-band electron-impurity interactions. A modulation of the π-band depending on the impurity concentrations and scattering potentials leads to the phase transition from insulator to semimetallic. We present here a detailed physical meaning of this transition by studying the treatment of massive Dirac fermions. From our findings, it is found that the ribbon width plays a crucial role in determining the electronic phase of disordered ABNNRs. The obtained results in controllable gap engineering are useful for future experiments. Also, the observations in this study have also fueled interest in the electronic properties of other 2D materials.

Variational method for magnetic impurities in metals: impurity pairs

Energy Technology Data Exchange (ETDEWEB)

Oles, A M [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.); Chao, K A [Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology

1980-01-01

Applying a variational method to the generalized Wolff model, we have investigated the effect of impurity-impurity interaction on the formation of local moments in the ground state. The direct coupling between the impurities is found to be more important than the interaction between the impurities and the host conduction electrons, as far as the formation of local moments is concerned. Under certain conditions we also observe different valences on different impurities.

Impurity band effects on transport and thermoelectric properties of Fe2 -xNixVAl

Science.gov (United States)

Knapp, I.; Budinska, B.; Milosavljevic, D.; Heinrich, P.; Khmelevskyi, S.; Moser, R.; Podloucky, R.; Prenninger, P.; Bauer, E.

2017-07-01

Full Heusler alloys of the series Fe2 -xNixVAl ,0 ≤x ≤0.2 , were prepared and characterized, and their physical properties, relevant to the thermoelectric performance of such materials, were studied in a wide temperature range. The starting material Fe2VAl is characterized by a pseudogap of the electronic density of states near the Fermi energy, with a gap width of the order of 1 eV. Density functional theory calculations were performed by application of two approaches. In the framework of the local-spin-density approximation and coherent potential approximation, the electronic densities of states of substitutional alloys were calculated, revealing that with increasing Ni content the Fermi energy moves toward the conduction band, and consequently, the nature of electronic transport changes from p type to n type. It appears that Ni, due to its extra electrons, provides a narrow impurity band near the Fermi level. These states can be made responsible for the experimentally observed evolution of transport properties. Furthermore, the Vienna ab initio Simulation package (vasp) was utilized for deriving electronic, structural, and vibrational properties of ordered Fe2VAl and Fe1.75Ni0.25VAl . In particular, it is found that due to Ni substitution there is a general shift to lower phonon frequencies by about 2 THz as compared to the undoped case. Associated to these modifications, the electrical resistivity, ρ (T ) , changes from a semiconducting-like behavior to a nonsimple metallic behavior, while the Seebeck coefficient reaches values of the order of -80 μ V /K around room temperature for the sample x =0.2 . The increase of the Ni content, in addition, goes along with a substantial reduction of the lattice part of the thermal conductivity. This change is analyzed in detail in terms of a disorder parameter Γ , characterizing the derangement of the crystalline lattice due to the substitution of Fe by Ni. Ab initio calculations of the phonon dynamics carried out

Local measurement of transport parameters for laser injected trace impurities

Energy Technology Data Exchange (ETDEWEB)

Giannella, R; Lauro-Taroni, L [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

1994-07-01

A procedure has been developed that determines local measurements of transport parameters`s profiles for injected impurities. The measured profiles extend from the plasma centre up to a certain radial position (usually {rho} = 0.6-0.7). In the outer region of the plasma the procedure supplies ``most suitable extensions`` up to the plasma edge of the measured transport profiles. The procedure intrinsically assures consistency and excellent agreement between the simulated and experimental data of local broad band soft X-ray emissivity and intensities of individual emission lines from different ion states of the injected impurities. 4 refs., 3 figs.

Electrical properties and band structures of Pb1-x Snx Te alloys

International Nuclear Information System (INIS)

Ocio, Miguel

1972-01-01

Both p type alloys Pb 0.72 Sn 0.28 Te and Pb 0.53 Sn 0.47 Te have been studied in the present work. The main obtained results are the following: the materials have a two-valence band structure, the first band following non-parabolic Cohen's dispersion law; at low temperatures, carriers are scattered by ionized impurities; the Coulomb potentials being screened almost completely, impurities act like neutral centers. At room temperature, scattering by acoustic modes can explain lattice mobility behavior; reversing of the thermo-power, for samples with carrier densities of about 10 20 cm -3 , is possibly due to inter-band scattering between both valence bands; a very simple picture of the band parameters variations as a function of alloy fraction is suggested. (author) [fr

Controlling Thermodynamic Properties of Ferromagnetic Group-IV Graphene-Like Nanosheets by Dilute Charged Impurity

Science.gov (United States)

Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos

2017-05-01

Using the Kane-Mele Hamiltonian, Dirac theory and self-consistent Born approximation, we investigate the effect of dilute charged impurity on the electronic heat capacity and magnetic susceptibility of two-dimensional ferromagnetic honeycomb structure of group-IV elements including silicene, germanene and stanene within the Green’s function approach. We also find these quantities in the presence of applied external electric field. Our results show that the silicene (stanene) has the maximum (minimum) heat capacity and magnetic susceptibility at uniform electric fields. From the behavior of theses quantities, the band gap has been changed with impurity concentration, impurity scattering strength and electric field. The analysis on the impurity-dependent magnetic susceptibility curves shows a phase transition from ferromagnetic to paramagnetic and antiferromagnetic phases. Interestingly, electronic heat capacity increases (decreases) with impurity concentration in silicene (germanene and stanene) structure.

Effects of the impurity-host interactions on the nonradiative processes in ZnS:Cr

Science.gov (United States)

Tablero, C.

2010-11-01

There is a great deal of controversy about whether the behavior of an intermediate band in the gap of semiconductors is similar or not to the deep-gap levels. It can have significant consequences, for example, on the nonradiative recombination. In order to analyze the behavior of an intermediate band, we have considered the effect of the inward and outward displacements corresponding to breathing and longitudinal modes of Cr-doped ZnS and on the charge density for different processes involved in the nonradiative recombination using first-principles. This metal-doped zinc chalcogenide has a partially filled band within the host semiconductor gap. In contrast to the properties exhibited by deep-gap levels in other systems, we find small variations in the equilibrium configurations, forces, and electronic density around the Cr when the nonradiative recombination mechanisms modify the intermediate band charge. The charge density around the impurity is equilibrated in response to the perturbations in the equilibrium nuclear configuration and the charge of the intermediate band. The equilibration follows a Le Chatelier principle through the modification of the contribution from the impurity to the intermediate band and to the valence band. The intermediate band introduced by Cr in ZnS for the concentrations analyzed makes the electronic capture difficult and later multiphonon emission in the charge-transfer processes, in accordance with experimental results.

First-principles thermodynamic calculations of diffusion characteristics of impurities in γ-iron

International Nuclear Information System (INIS)

Tsuru, T.; Kaji, Y.

2013-01-01

Because solute impurities have an effect on embrittlement through segregation under irradiation, solute stability and the influence of irradiation on the diffusion characteristics of impurities become prominent due to several acceleration effects of high irradiance circumstances in irradiated materials. In this study, the diffusion characteristics of several impurities in non-magnetic fcc iron are investigated using first-principles density functional theory (DFT) calculations. In accordance with classical diffusion and transition state theories, we nonempirically evaluated the contribution to properties of the binding energy between vacancy and each impurity and the migration enthalpy. The migration energy was calculated using the nudged elastic band method with DFT. The vacancy formation energy, including the entropic contributions to free energies in γ-iron, was evaluated by considering vibrational phonon frequencies based on frozen phonons employing the harmonic approximation for the lattice dynamics. Consequently, we confirmed that the binding energy between large-radius impurities and vacancies is larger than that with an equivalent size of the solvent element, and that the migration enthalpies of these impurities are quite small compared with self diffusion. This finding may indicate that the electronic binding states at the saddle point have a large influence on the migration of impurities

Donor impurity-related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells: hydrostatic pressure and {gamma}-X conduction band mixing effects

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, MOR (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Lopez, S.Y. [Fac. de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

2007-07-01

Using a variational procedure within the effective mass approximation, the mixing between the {gamma} and X conduction band valleys in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The DSS-14 C-band exciter

Science.gov (United States)

Rowan, D. R.

1989-01-01

The development and implementation of a C-band exciter for use with the Block IV Receiver-Exciter Subsystem at Deep Space Station 14 (DSS-14) has been completed. The exciter supplements the standard capabilities of the Block IV system by providing a drive signal for the C-band transmitter while generating coherent translation frequencies for C-band (5-GHz) to S-band (2.2- to 2.3-GHz) Doppler extraction, C-band to L-band (1.6-GHz) zero delay measurements, and a level calibrated L-band test signal. Exciter functions are described, and a general explanation and description of the C-band uplink controller is presented.

47 CFR 27.16 - Network access requirements for Block C in the 746-757 and 776-787 MHz bands.

Science.gov (United States)

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Network access requirements for Block C in the 746-757 and 776-787 MHz bands. 27.16 Section 27.16 Telecommunication FEDERAL COMMUNICATIONS COMMISSION... network restrictions on industry-wide consensus standards, such restrictions would be presumed reasonable...

Noble gas atoms as chemical impurities in silicon

International Nuclear Information System (INIS)

Tkachev, V.D.; Mudryi, A.V.; Minaev, N.S.

1984-01-01

The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Moessbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms. (author)

Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

International Nuclear Information System (INIS)

Azzouzi, Ghania; Chegaar, Mohamed

2011-01-01

The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J sc , open circuit voltage V oc , conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E c -E t =0.18 eV.

Chemical modifications and stability of phosphorene with impurities: a first principles study.

Science.gov (United States)

Boukhvalov, D W; Rudenko, A N; Prishchenko, D A; Mazurenko, V G; Katsnelson, M I

2015-06-21

We perform a systematic first-principles study of phosphorene in the presence of typical monovalent (hydrogen and fluorine) and divalent (oxygen) impurities. The results of our modeling suggest a decomposition of phosphorene into weakly bonded one-dimensional (1D) chains upon single- and double-side hydrogenation and fluorination. In spite of a sizable quasiparticle band gap (2.29 eV), fully hydrogenated phosphorene was found to be dynamically unstable. In contrast, complete fluorination of phosphorene gives rise to a stable structure, which is an indirect gap semiconductor with a band gap of 2.27 eV. We also show that fluorination of phosphorene from the gas phase is significantly more likely than hydrogenation due to the relatively low energy barrier for the dissociative adsorption of F2 (0.19 eV) compared to H2 (2.54 eV). At low concentrations, monovalent impurities tend to form regular atomic rows of phosphorene, though such patterns do not seem to be easily achievable due to high migration barriers (1.09 and 2.81 eV for H2 and F2, respectively). Oxidation of phosphorene is shown to be a qualitatively different process. Particularly, we observe instability of phosphorene upon oxidation, leading to the formation of disordered amorphous-like structures at high concentrations of impurities.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

International Nuclear Information System (INIS)

Kheyri, A.; Nourbakhsh, Z.; Darabi, E.

2016-01-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

Energy Technology Data Exchange (ETDEWEB)

Kheyri, A. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Nourbakhsh, Z., E-mail: z.nourbakhsh@sci.ui.ac.ir [Physics Department, Faculty of Science, University of Isfahan, Isfahan (Iran, Islamic Republic of); Darabi, E. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2016-08-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects

International Nuclear Information System (INIS)

Restrepo, R.L.; Giraldo, E.; Miranda, G.L.; Ospina, W.; Duque, C.A.

2009-01-01

The combined effects of the hydrostatic pressure and in-growth direction applied electric field on the binding energy of hydrogenic shallow-donor impurity states in parallel-coupled-GaAs-Ga 1-x Al x As-quantum-well wires are calculated using a variational procedure within the effective-mass and parabolic-band approximations. Results are obtained for several dimensions of the structure, shallow-donor impurity positions, hydrostatic pressure, and applied electric field. Our results suggest that external inputs such us hydrostatic pressure and in-growth direction electric field are two useful tools in order to modify the binding energy of a donor impurity in parallel-coupled-quantum-well wires.

Anisotropy effects in superconductors with magnetic impurities. Pt. 2

International Nuclear Information System (INIS)

Entel, P.

1976-01-01

The influence of Fermi surface anisotropy on the specific heat jumps, ΔC, at the phase transition for superconductors containing magnetic and nonmagnetic impurities is discussed. In the framework of a simple two-band or two-zone model we find for small interband electron-phonon coupling constants characteristic maxima in the ΔC(Tsub(c))-curve. These departures from the corresponding ΔC-curve of a single-band isotropic superconductor are mostly pronounced for weak and strong interband Coulomb scattering of conduction electrons on nonmagnetic ions. There is only a small range of intermediate scattering rates for which the maxima are smeared out. (orig.) [de

Building blocks of topological quantum chemistry: Elementary band representations

Science.gov (United States)

Cano, Jennifer; Bradlyn, Barry; Wang, Zhijun; Elcoro, L.; Vergniory, M. G.; Felser, C.; Aroyo, M. I.; Bernevig, B. Andrei

2018-01-01

The link between chemical orbitals described by local degrees of freedom and band theory, which is defined in momentum space, was proposed by Zak several decades ago for spinless systems with and without time reversal in his theory of "elementary" band representations. In a recent paper [Bradlyn et al., Nature (London) 547, 298 (2017), 10.1038/nature23268] we introduced the generalization of this theory to the experimentally relevant situation of spin-orbit coupled systems with time-reversal symmetry and proved that all bands that do not transform as band representations are topological. Here we give the full details of this construction. We prove that elementary band representations are either connected as bands in the Brillouin zone and are described by localized Wannier orbitals respecting the symmetries of the lattice (including time reversal when applicable), or, if disconnected, describe topological insulators. We then show how to generate a band representation from a particular Wyckoff position and determine which Wyckoff positions generate elementary band representations for all space groups. This theory applies to spinful and spinless systems, in all dimensions, with and without time reversal. We introduce a homotopic notion of equivalence and show that it results in a finer classification of topological phases than approaches based only on the symmetry of wave functions at special points in the Brillouin zone. Utilizing a mapping of the band connectivity into a graph theory problem, we show in companion papers which Wyckoff positions can generate disconnected elementary band representations, furnishing a natural avenue for a systematic materials search.

Strongly reduced band gap in NiMn2O4 due to cation exchange

International Nuclear Information System (INIS)

Huang, Jhih-Rong; Hsu, Han; Cheng, Ching

2014-01-01

NiMn 2 O 4 is extensively used as a basis material for temperature sensors due to its negative temperature coefficient of resistance (NTCR), which is commonly attributed to the hopping mechanism involving coexisting octahedral-site Mn 4+ and Mn 3+ . Using density-functional theory + Hubbard U calculations, we identify a ferrimagnetic inverse spinel phase as the collinear ground state of NiMn 2 O 4 . By a 12.5% cation exchange, a mixed phase with slightly higher energy can be constructed, accompanied by the formation of an impurity-like band in the original 1 eV band gap. This impurity-like band reduces the gap to 0.35 eV, suggesting a possible source of NTCR. - Highlights: • Density functional based calculations were used to study collinear phase of NiMn 2 O 4 . • The ground-state structure is a ferrimagnetic inverse spinel phase. • The tetrahedral and octahedral Mn cations have ferromagnetic interactions. • A 12.5% cation exchange introduces an impurity-like band in the original 1 eV gap. • The 0.35 eV gap suggests a source of negative temperature coefficient of resistance

Polarizability of a crystal with impurities

International Nuclear Information System (INIS)

Goettig, S.

1985-09-01

The expression for the complex frequency- and wavevector-dependent longitudinal electronic polarizability due to the presence of a weak static disorder (e.g. impurities) in a crystal with an arbitrary band structure is derived. The quantum kinetic equation in the self-consistent-field approximation is solved, expanding the one-particle density operator in powers of the screened static imperfection field and a weak perturbing electric field. The polarizability is determined by the induced electronic charge density quadratic in the imperfection field and linear in the perturbing field, averaged over the statistical distribution of imperfections. The obtained expression, which accounts properly for the collective effects in the electronic plasma, takes also into account the polar coupling of the plasma with longitudinal optical phonons. The conductivity in the optical limit (q-vector→O) is calculated, and the correspondence with one-band effective-mass approximation is established. (author)

Electron tunneling into superconducting indium and lead films containing the magnetic impurity manganese

International Nuclear Information System (INIS)

Tsang, J.K.

1980-01-01

Tunneling measurements of quench-condensed In-Mn and Pb-Mn alloy films were made. The results were compared with Shiba's theory of superconductors containing magnetic impurities. The localized excited impurity states predicted by Shiba's theory were observed in both alloys. In addition to s-wave scattering, it was necessary to include p- and d-wave scattering of the conduction electrons in the theory in order to explain the experimental data. Partial agreement between the theory and the experimental data was obtained using phase shifts from band calculations by A.B. Kunz. The results on In-Mn also agree with thermal conductivity data

Donor impurity-related photoionization cross section in GaAs cone-like quantum dots under applied electric field

Science.gov (United States)

Iqraoun, E.; Sali, A.; Rezzouk, A.; Feddi, E.; Dujardin, F.; Mora-Ramos, M. E.; Duque, C. A.

2017-06-01

The donor impurity-related electron states in GaAs cone-like quantum dots under the influence of an externally applied static electric field are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The uncorrelated Schrödinger-like electron states are obtained in quasi-analytical form and the entire electron-impurity correlated states are used to calculate the photoionisation cross section. Results for the electron state energies and the photoionisation cross section are reported as functions of the main geometrical parameters of the cone-like structures as well as of the electric field strength.

Simulation of iron impurity in BaTiO3 crystals

International Nuclear Information System (INIS)

Stashans, Arvids; Castillo, Darwin

2009-01-01

Iron-doped barium titanate (BaTiO 3 ) has been simulated taking into account cubic and tetragonal crystallographic lattices of the crystal. A quantum-chemical method based on the Hartree-Fock formalism has been used throughout the study. The calculated equilibrium structures of Fe-doped crystals reveal the defect-inward displacements of the Ti and O atoms whereas the shifts for the Ba atoms are encountered to be away with respect to the Fe impurity. According to the analysis of electron density population and electron band structure it is found that some unusual chemical bonding might take place between the Fe atom and its six adjacent O atoms. The role of Fe impurity in the ferroelectric polarization of the tetragonal BaTiO 3 crystal has been discussed too.

Long-range ferromagnetic order induced by a donor impurity band exchange in SnO{sub 2}:Er{sup 3+} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Aragón, F. H.; Coaquira, J. A. H. [Núcleo de Física Aplicada, Institute of Physics, University of Brasília, Brasília DF 70910-900 (Brazil); Chitta, V. A. [Instituto de Física, Universidade de São Paulo, São Paulo, SP 05508-000 (Brazil); Hidalgo, P. [Faculdade Gama-FGA, Sector Central Gama, Universidade de Brasília, Brasília, DF72405-610 (Brazil); Brito, H. F. [Instituto de Química, Universidade de São Paulo, São Paulo, SP 05508-000 (Brazil)

2013-11-28

In this work, the structural and magnetic properties of Er-doped SnO{sub 2} (SnO{sub 2}:Er) nanoparticles are reported. The SnO{sub 2}:Er nanoparticles have been synthesized by a polymer precursor method with Er content from 1.0% to 10.0%. X-ray diffraction results indicate the formation of only the rutile-type structure in all samples. The estimated mean crystallite size shows a decrease from ∼10 to ∼4 nm when the Er content is increased from 1.0% to 10.0%. The particle size values have been corroborated by transmission electron microscopy technique. The thermal dependence of the magnetization is consistent with the 3+ oxidation state of erbium ions for all samples. A strong paramagnetic-like behavior coexisting with a ferromagnetic phase has been determined for samples with Er content below 5.0%. Above this concentration, only a paramagnetic behavior has been determined. Isothermal magnetization curves are consistent with the occurrence of long-range ferromagnetic order mediated by donor electrons forming bound magnetic polarons which overlap to produce a spin-split impurity band.

Spectroscopic determination of valence band parameters in InP

International Nuclear Information System (INIS)

Lewis, R.A.; Lough, B.C.C.

2003-01-01

Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

International Nuclear Information System (INIS)

Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L.; Eversheim, P.D.

2005-01-01

We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al 2 O 3 single crystals implanted with 181 Hf/ 181 Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with 111 In/ 111 Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Trace impurity analyzer

International Nuclear Information System (INIS)

Schneider, W.J.; Edwards, D. Jr.

1979-01-01

The desirability for long-term reliability of large scale helium refrigerator systems used on superconducting accelerator magnets has necessitated detection of impurities to levels of a few ppM. An analyzer that measures trace impurity levels of condensable contaminants in concentrations of less than a ppM in 15 atm of He is described. The instrument makes use of the desorption temperature at an indicated pressure of the various impurities to determine the type of contaminant. The pressure rise at that temperature yields a measure of the contaminant level of the impurity. A LN 2 cryogenic charcoal trap is also employed to measure air impurities (nitrogen and oxygen) to obtain the full range of contaminant possibilities. The results of this detector which will be in use on the research and development helium refrigerator of the ISABELLE First-Cell is described

Creation of near-infrared emitting optical center related to nickel–silicon impurity complex in nanodiamond grains

International Nuclear Information System (INIS)

Tóth, S.; Himics, L.; Koós, M.

2016-01-01

Nanodiamond grains having intensive light emission in the near-infrared region even at room temperature carry an important application potential. Advantages of light emitting optical centers formed in nanodiamond grains are the emission concentrated into a narrow band and that they are mostly single photon emitter. Transition metal related impurity centers formed in nanodiamond grains exhibit these favorable properties. In this work we report on the creation of Ni–Si impurity related complex defect center in nanodiamond grains under microwave plasma assisted chemical vapor deposition (MW CVD) growth process. This complex center accounts for the previously undocumented fluorescence system with zero phonon line (ZPL) emission at 865 nm (1.433 eV) and band width of 1.5 nm (2.4 meV) at room temperature. By varying deposition conditions the Ni–Si impurity related complex defect center was formed in nanodiamond grains of 80–200 nm average sizes. Some variation of ZPL peak position and line width have been detected in nanodiamond grains prepared at different conditions, as well as in numerous nanodiamond grains prepared at the same conditions. The variations of local stress field may explain the spread of ZPL spectral parameters.

Creation of near-infrared emitting optical center related to nickel–silicon impurity complex in nanodiamond grains

Energy Technology Data Exchange (ETDEWEB)

Tóth, S., E-mail: toth.sara@wigner.mta.hu; Himics, L.; Koós, M.

2016-08-15

Nanodiamond grains having intensive light emission in the near-infrared region even at room temperature carry an important application potential. Advantages of light emitting optical centers formed in nanodiamond grains are the emission concentrated into a narrow band and that they are mostly single photon emitter. Transition metal related impurity centers formed in nanodiamond grains exhibit these favorable properties. In this work we report on the creation of Ni–Si impurity related complex defect center in nanodiamond grains under microwave plasma assisted chemical vapor deposition (MW CVD) growth process. This complex center accounts for the previously undocumented fluorescence system with zero phonon line (ZPL) emission at 865 nm (1.433 eV) and band width of 1.5 nm (2.4 meV) at room temperature. By varying deposition conditions the Ni–Si impurity related complex defect center was formed in nanodiamond grains of 80–200 nm average sizes. Some variation of ZPL peak position and line width have been detected in nanodiamond grains prepared at different conditions, as well as in numerous nanodiamond grains prepared at the same conditions. The variations of local stress field may explain the spread of ZPL spectral parameters.

Anomalous Micellization of Pluronic Block Copolymers

Science.gov (United States)

Leonardi, Amanda; Ryu, Chang Y.

2014-03-01

Poly(ethylene oxide) - poly(propylene oxide) - poly(ethylene oxide) (PEO-PPO-PEO) block copolymers, commercially known as Pluronics, are a unique family of amphiphilic triblock polymers, which self-assemble into micelles in aqueous solution. These copolymers have shown promise in therapeutic, biomedical, cosmetic, and nanotech applications. As-received samples of Pluronics contain low molecular weight impurities (introduced during the manufacturing and processing), that are ignored in most applications. It has been observed, however, that in semi-dilute aqueous solutions, at concentrations above 1 wt%, the temperature dependent micellization behavior of the Pluronics is altered. Anomalous behavior includes a shift of the critical micellization temperature and formation of large aggregates at intermediate temperatures before stable sized micelles form. We attribute this behavior to the low molecular weight impurities that are inherent to the Pluronics which interfere with the micellization process. Through the use of Dynamic Light Scattering and HPLC, we compared the anomalous behavior of different Pluronics of different impurity levels to their purified counterparts.

Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects

Science.gov (United States)

Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.

2016-10-01

The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.

Optical-absorption spectra associated with shallow donor impurities in GaAs-(Ga,Al)As quantum-dots

International Nuclear Information System (INIS)

Silva Valencia, J.

1995-08-01

The binding energy of a hydrogenic donor impurity and the optical-absorption spectra associated with transitions between the n=1 valence level and the donor-impurity band were calculated for infinite barrier-well spherical GaAs-(Ga,Al)As quantum-dots of different radii, using the effective mass approximation within a variational scheme. An absorption peak associated with transitions involving impurities at the center of the well and a peak related with impurities at the edge of the dot were the main features observed for the different radii of the dots considered in the calculations. Also as a result of the higher electronic confinement in a quantum- dot, we found a much wider energy range of the absorption spectra when compared to infinite GaAs-(Ga,Al)As quantum-wells and quantum-well wires of width and diameter comparable to the diameter of the quantum dot. (author). 13 refs, 3 figs

Comment on contact contributions to the magnetic hyperfine interaction of rare-earth impurities in iron

International Nuclear Information System (INIS)

Bernas, H.

1977-01-01

The influence of the strong d character of the Fe conduction band on the hyperfine interaction of dilute rare earth impurities is emphasized, and the contact contributions are estimated. Apparent inconsistencies between hyperfine field measurements for Eu and Gd in Fe are noted

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

Science.gov (United States)

Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

2018-05-01

We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

Theoretical study of impurity effects in iron-based superconductors

Science.gov (United States)

Navarro Gastiasoro, Maria; Hirschfeld, Peter; Andersen, Brian

2013-03-01

Several open questions remain unanswered for the iron-based superconductors (FeSC), including the importance of electronic correlations and the symmetry of the superconducting order parameter. Motivated by recent STM experiments which show a fascinating variety of resonant defect states in FeSC, we adopt a realistic five-band model including electronic Coulomb correlations to study local effects of disorder in the FeSC. In order to minimize the number of free parameters, we use the pairing interactions obtained from spin-fluctuation exchange to determine the homogeneous superconducting state. The ability of local impurity potentials to induce resonant states depends on their scattering strength Vimp; in addition, for appropriate Vimp, such states are associated with local orbital- and magnetic order. We investigate the density of states near such impurities and show how tunneling experiments may be used to probe local induced order. In the SDW phase, we show how C2 symmetry-breaking dimers are naturally formed around impurities which also form cigar-like (pi,pi) structures embedded in the (pi,0) magnetic bulk phase. Such electronic dimers have been shown to be candidates for explaining the so-called nematogens observed previously by QPI in Co-doped CaFe2As2.

Competing pseudogap and impurity effects on the normal-state specific heat properties of cuprate superconductors

Science.gov (United States)

Dzhumanov, S.; Karimboev, E. X.

2014-07-01

In this paper, we show that the pseudogap in the excitation spectra of high-Tc cuprates together with the impurity phase and charge inhomogeneity plays key roles in determining the essential features of their anomalous specific heat properties observed above Tc. We consider the doped cuprate superconductor as a multi-carrier model system (which consists of intrinsic and extrinsic polarons and pre-formed bosonic Cooper pairs) and study the competing pseudogap and impurity effects on the normal-state electronic specific heat of high-Tc cuprates taking into account charge inhomogeneities. We argue that unconventional electron-phonon interactions are responsible for the precursor Cooper pairing in the polaronic band below a mean-field temperature T∗ and the existence of a pseudogap above Tc in the cuprates. The electronic specific heat Ce(T) of doped cuprates below T∗ is calculated taking into account three contributions coming from the excited components of Cooper pairs, the ideal Bose-gas of incoherent Cooper pairs and the unpaired carriers in the impurity band. Above T∗, two contributions to Ce(T) coming from the unpaired intrinsic and extrinsic polarons are calculated within the two-component degenerate Fermi-gas model. By comparing our results with the experimental Ce(T) data obtained for La- and Y-based cuprates, we find that the observed behaviors of Ce(T) (below and above T∗) are similar to the calculated results for Ce(T) and the BCS-type jumps of Ce(T) at T∗ may be depressed by the impurity effects and may become more or less pronounced BCS-type anomalies in Ce(T) .

Intermediate bands versus levels in non-radiative recombination

International Nuclear Information System (INIS)

Luque, Antonio; Marti, Antonio; Antolin, Elisa; Tablero, Cesar

2006-01-01

There is a practical interest in developing semiconductors with levels situated within their band gap while preventing the non-radiative recombination that these levels promote. In this paper, the physical causes of this non-radiative recombination are analyzed and the increase in the density of the impurities responsible for the mid-gap levels to the point of forming bands is suggested as the means of suppressing the recombination. Simple models supporting this recommendation and helping in its quantification are presented

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

International Nuclear Information System (INIS)

Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

2013-01-01

Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

Simulation of iron impurity in BaTiO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids, E-mail: arvids@utpl.edu.e [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Castillo, Darwin [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

2009-05-01

Iron-doped barium titanate (BaTiO{sub 3}) has been simulated taking into account cubic and tetragonal crystallographic lattices of the crystal. A quantum-chemical method based on the Hartree-Fock formalism has been used throughout the study. The calculated equilibrium structures of Fe-doped crystals reveal the defect-inward displacements of the Ti and O atoms whereas the shifts for the Ba atoms are encountered to be away with respect to the Fe impurity. According to the analysis of electron density population and electron band structure it is found that some unusual chemical bonding might take place between the Fe atom and its six adjacent O atoms. The role of Fe impurity in the ferroelectric polarization of the tetragonal BaTiO{sub 3} crystal has been discussed too.

Electric-field gradient characterization at {sup 181}Ta impurities in sapphire single crystals

Energy Technology Data Exchange (ETDEWEB)

Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Eversheim, P.D. [Helmholtz-Institut fuer Strahlen-und Kernphysik (ISKP), Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

2005-07-01

We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al{sub 2}O{sub 3} single crystals implanted with {sup 181}Hf/{sup 181}Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with {sup 111}In/{sup 111}Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electric-field gradients at Ta donor impurities in Cr2O3(Ta) semiconductor

International Nuclear Information System (INIS)

Darriba, G.N.; Errico, L.A.; Munoz, E.L; Richard, D.; Eversheim, P.D.; Renteria, M.

2009-01-01

We report perturbed-angular-correlation (PAC) experiments on 181 Hf(→ 181 Ta)-implanted corundum Cr 2 O 3 powder samples in order to determine the magnitude and symmetry of the electric-field gradient (EFG) tensor at Ta donor impurity sites of this semiconductor. These results are analyzed in the framework of ab initio full-potential augmented-plane wave plus local orbitals (FP-APW+lo) calculations. The results are also compared with EFG results coming from PAC experiments in isomorphous α-Al 2 O 3 and α-Fe 2 O 3 doped with 111 In→ 111 Cd and 181 Hf→ 181 Ta tracers. This combined analysis enables us to quantify the magnitude of the lattice relaxations induced by the presence of the impurity and to determine the charge state of the impurity donor level introduced by Ta in the band gap of the semiconductor.

Electron correlations in narrow band systems

International Nuclear Information System (INIS)

Kishore, R.

1983-01-01

The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

Impurity diffusion in transition-metal oxides

International Nuclear Information System (INIS)

Peterson, N.L.

1982-06-01

Intrinsic tracer impurity diffusion measurements in ceramic oxides have been primarily confined to CoO, NiO, and Fe 3 O 4 . Tracer impurity diffusion in these materials and TiO 2 , together with measurements of the effect of impurities on tracer diffusion (Co in NiO and Cr in CoO), are reviewed and discussed in terms of impurity-defect interactions and mechanisms of diffusion. Divalent impurities in divalent solvents seem to have a weak interaction with vacancies whereas trivalent impurities in divalent solvents strongly influence the vacancy concentrations and significantly reduce solvent jump frequencies near a trivalent impurity. Impurities with small ionic radii diffuse more slowly with a larger activation energy than impurities with larger ionic radii for all systems considered in this review. Cobalt ions (a moderate size impurity) diffuse rapidly along the open channels parallel to the c-axis in TiO 2 whereas chromium ions (a smaller-sized impurity) do not. 60 references, 11 figures

Hydrostatic pressure effects on the {gamma}-X conduction band mixing and the binding energy of a donor impurity in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells

Energy Technology Data Exchange (ETDEWEB)

Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62210, Cuernavaca (Mexico)

2007-06-15

Mixing between {gamma} and X valleys of the conduction band in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the {gamma}-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of the magnetic hyperfine field at an s–p impurity diluted in RNi_2

International Nuclear Information System (INIS)

Oliveira, A.L. de; Chaves, C.M.; Oliveira, N.A. de; Troper, A.

2016-01-01

We study the formation of local magnetic moments and magnetic hyperfine fields at an s–p impurity diluted in intermetallic Laves phase compounds RNi_2 (R=Nd, Sm, Gd, Tb, Dy) at finite temperatures. We start with a clean host and later the impurity is introduced. The host has two-coupled (R and Ni) sublattice Hubbard Hamiltonians but the Ni sublattice can be disregarded because its d band, being full, is magnetically ineffective. Also, the effect of the 4f electrons of R is represented by the polarization they produce on the d band. This leaves us with a lattice of effective rare earth R-ions with polarized electrons. For the dd electronic interaction we use the Hubbard–Stratonovich identity in a functional integral approach in the static saddle point approximation. - Highlights: • Functional integral method in the static limit, producing site disorder, is used. • The site disorder is treated with the Coherent Potential Approximation (CPA). • Non magnetic Ni generates an effective lattice with only a polarized R d band. • The effective R lattice differ from the pure R metal: Results and Discussions. • The experimental curve of hyperfine fields × temperature are very well reproduced.

Integrable quantum impurity models

International Nuclear Information System (INIS)

Eckle, H.P.

1998-01-01

By modifying some of the local L operators of the algebraic form of the Bethe Ansatz inhomogeneous one dimensional quantum lattice models can be constructed. This fact has recently attracted new attention, the inhomogeneities being interpreted as local impurities. The Hamiltonians of the so constructed one-dimensional quantum models have a nearest neighbour structure except in the vicinity of the local impurities which involve three-site interactions. The pertinent feature of these models is the absence of backscattering at the impurities: the impurities are transparent. (Copyright (1998) World Scientific Publishing Co. Pte. Ltd)

First-principles calculations of impurity diffusion coefficients in dilute Mg alloys using the 8-frequency model

International Nuclear Information System (INIS)

Ganeshan, S.; Hector, L.G.; Liu, Z.-K.

2011-01-01

Research highlights: → Implemented the eight frequency model for impurity diffusion in hexagonal metals. → Model inputs were energetics/vibrational properties from first princples. → Predicted diffusion coefficients for Al, Ca, Zn and Sn impurity diffusion in Mg. → Successful prediction of partial correlation factors and jump frequencies. → Good agreement between calculated and experimental results. - Abstract: Diffusion in dilute Mg-X alloys, where X denotes Al, Zn, Sn and Ca impurities, was investigated with first-principles density functional theory in the local density approximation. Impurity diffusion coefficients were computed as a function of temperature using the 8-frequency model which provided the relevant impurity and solvent (Mg) jump frequencies and correlation factors. Minimum energy pathways for impurity diffusion and associated saddle point structures were computed with the climbing image nudged elastic band method. Vibrational properties were obtained with the supercell (direct) method for lattice dynamics. Calculated diffusion coefficients were compared with available experimental data. For diffusion between basal planes, we find D Mg-Ca > D Mg-Zn > D Mg-Sn > D Mg-Al, where D is the diffusion coefficient. For diffusion within a basal plane, the same trend holds except that D Mg-Zn overlaps with D Mg-Al at high temperatures and D Mg-Sn at low temperatures. These trends were explored with charge density contours in selected planes of each Mg-X alloy, the variation of the activation energy for diffusion with the atomic radius of each impurity and the electronic density of states. The theoretical methodology developed herein can be applied to impurity diffusion in other hexagonal materials.

Donor-impurity-related optical response and electron Raman scattering in GaAs cone-like quantum dots

Science.gov (United States)

Gil-Corrales, A.; Morales, A. L.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.

2017-02-01

The donor-impurity-related optical absorption, relative refractive index changes, and Raman scattering in GaAs cone-like quantum dots are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The study involves 1 s -like, 2px-like, and 2pz-like states. The conical structure is chosen in such a way that the cone height is large enough in comparison with the base radius thus allowing the use a quasi-analytic solution of the uncorrelated Schrödinger-like electron states.

Fractals: Giant impurity nonlinearities in optics of fractal clusters

International Nuclear Information System (INIS)

Butenko, A.V.; Shalaev, V.M.; Stockman, M.I.

1988-01-01

A theory of nonlinear optical properties of fractals is developed. Giant enhancement of optical susceptibilities is predicted for impurities bound to a fractal. This enhancement occurs if the exciting radiation frequency lies within the absorption band of the fractal. The giant optical nonlinearities are due to existence of high local electric fields in the sites of impurity locations. Such fields are due to the inhomogeneously broadened character of a fractal spectrum, i.e. partial conservation of individuality of fractal-forming particles (monomers). The field enhancement is proportional to the Q-factor of the resonance of a monomer. The effects of coherent anti-Stokes Raman scattering (CARS) and phase conjugation (PC) of light waves are enhanced to a much greater degree than generation of higher harmonics. In a general case the susceptibility of a higher-order is enhanced in the maximum way if the process includes ''subtraction'' of photons (at least one of the strong field frequencies enters the susceptibility with the minus sign). Alternatively, enhancement for the highest-order harmonic generation (when all the photons are ''accumulated'') is minimal. The predicted phenomena bear information on spectral properties of both impurity molecules and a fractal. In particular, in the CARS spectra a narrow (with the natural width) resonant structure, which is proper to an isolated monomer of a fractal, is predicted to be observed. (orig.)

Trends on 3d transition metal impurities in diamond

International Nuclear Information System (INIS)

Assali, L.V.C.; Machado, W.V.M.; Justo, J.F.

2009-01-01

We carried out a first principles investigation on the electronic properties and chemical trends of 3d transition metal related impurities in diamond. In terms of formation energy, the interstitial site is considerably more unfavorable than the substitutional or divacancy ones. Going from Ti to Ni, the 3d-related energy levels in the gap become deeper toward the valence band in all three sites. However, in the divacancy one, those levels cross with the divacancy-related ones, such that the electronic property of the center depends on the character of the highest occupied level.

Dynamics of impurity modes and electron–phonon interaction in Heavy Fermion (HF) systems

International Nuclear Information System (INIS)

Shadangi, N.; Sahoo, J.; Mohanty, S.; Nayak, P.

2014-01-01

A theoretical explanation is provided to understand the effect of small concentration of impurities characterized by change in mass and nearest neighbor force constants on the phonon spectrum as well as on the electron–phonon interaction in some Heavy Fermion (HF) systems in the normal state within theoretical framework of the Periodic Anderson Model (PAM). Three different mechanisms of the electron–phonon interactions, namely, the usual interaction between the phonons with the electrons in the f-bands, electrons arising from that of hybridization term of PAM and the local electron–phonon coupling at the impurity sites are considered. Coherent Potential Approximation (CPA) is used to evaluate the configuration averaged self–energy and the total Green function. For simplicity of calculation the CPA self–energy is evaluated in Average t -matrix Approximation (ATA). The analytical analysis is carried out for finite T in the long wavelength limit. The influence of impurity mass parameter λ and other system parameters such as d, the position of f-level, the effective coupling strength g on the calculated re-normalized phonon frequency and the excitation spectrum through the spectral function is studied. The numerical analysis of the results does show the influence of impurities as evident from different plots in this paper.

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

Science.gov (United States)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1980-01-01

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

Present status of intermediate band solar cell research

International Nuclear Information System (INIS)

Cuadra, L.; Marti, A.; Luque, A.

2004-01-01

The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells. This novel photovoltaic converter bases its superior theoretical efficiency over single-gap solar cells by enhancing its photogenerated current, via the two-step absorption of sub-band gap photons, without reducing its output voltage. This is achieved through a material with an electrically isolated and partially filled intermediate band located within a higher forbidden gap. This material is commonly named intermediate band material. This paper centres on summarising the present status of intermediate band solar cell research. A number of attempts, which aim to implement the intermediate band concept, are being followed: the direct engineering of the intermediate band material, its implementation by means of quantum dots and the highly porous material approach. Among other sub-band gap absorbing proposals, there is a renewed interest on the impurity photovoltaic effect, the quantum well solar cells and the particularly promising proposal for the use of up- and down-converters

Numerical renormalization group calculation of impurity internal energy and specific heat of quantum impurity models

Science.gov (United States)

Merker, L.; Costi, T. A.

2012-08-01

We introduce a method to obtain the specific heat of quantum impurity models via a direct calculation of the impurity internal energy requiring only the evaluation of local quantities within a single numerical renormalization group (NRG) calculation for the total system. For the Anderson impurity model we show that the impurity internal energy can be expressed as a sum of purely local static correlation functions and a term that involves also the impurity Green function. The temperature dependence of the latter can be neglected in many cases, thereby allowing the impurity specific heat Cimp to be calculated accurately from local static correlation functions; specifically via Cimp=(∂Eionic)/(∂T)+(1)/(2)(∂Ehyb)/(∂T), where Eionic and Ehyb are the energies of the (embedded) impurity and the hybridization energy, respectively. The term involving the Green function can also be evaluated in cases where its temperature dependence is non-negligible, adding an extra term to Cimp. For the nondegenerate Anderson impurity model, we show by comparison with exact Bethe ansatz calculations that the results recover accurately both the Kondo induced peak in the specific heat at low temperatures as well as the high-temperature peak due to the resonant level. The approach applies to multiorbital and multichannel Anderson impurity models with arbitrary local Coulomb interactions. An application to the Ohmic two-state system and the anisotropic Kondo model is also given, with comparisons to Bethe ansatz calculations. The approach could also be of interest within other impurity solvers, for example, within quantum Monte Carlo techniques.

Fermi integral and density-of-states functions in a parabolic band ...

Indian Academy of Sciences (India)

B K Chaudhuri

2018-01-03

Jan 3, 2018 ... distribution of the potential energy of the impurity states, showing a band tail in them e.g., ... oscillatory function of η (reduced Fermi energy = Ef/kBT, kB is the Boltzmann ...... grals, in: Network for computational nanotechnology.

In situ mobile subaquatic archaeometry evaluated by non-destructive Raman microscopy of gemstones lying under impure waters

Science.gov (United States)

Smith, David C.

2003-08-01

A series of laboratory simulations have been made in order to evaluate the credibility of carrying out physico-chemical analysis of cultural heritage items by Raman spectral fingerprinting using a mobile Raman microscope in situ under natural impure water in subaquatic or submarine conditions. Three different kinds of gemstone (zircon, microcline and sodalite) were successively placed under different kinds of impure water into which a low power microscope objective was immersed to eliminate the normal aerial pathway between the objective and the object to be analysed. According to the nature of the impurities (inorganic or organic, dissolved or suspended, transparent or coloured) the results obtained variously gave Raman band intensities stronger than, similar to or weaker than those of spectra obtained without water, i.e. in air. The significant point is that after only minor spectral treatment the less good spectra nevertheless yielded exploitable data with most, if not all, of the key Raman bands being detected. Thus the problems of fluorescence or peak absences under water are of a similar degree of magnitude to the other problems inherent with the Raman spectroscopic technique in aerial conditions, e.g. relative peak intensities varying with crystal orientation; peak positions varying with chemical composition. These results indicate that even if at certain sites of submerged cities or sunken ships, the combination of animal, vegetal, mineral and microbial impurities join together to inhibit or hinder the success of subaquatic or submarine archaeometry, there will certainly be other sites where such activity is indeed credible.

Laser-excited luminescence of trace Nd3+ impurity in LaBr3 revealed by Raman spectroscopy

Science.gov (United States)

Yu, Jinqiu; Cui, Lei; He, Huaqiang; Hu, Yunsheng; Wu, Hao; Zeng, Jia; Liu, Yuzhu

2012-10-01

Unexpected additional bands with obvious non-vibrational features were observed in Raman spectra of LaBr3. Extensive study was carried out to reveal the origin of these bands. Results indicate that the additional bands correspond to laser-excited luminescence of trace Nd3+ impurity unintentionally introduced from the La2O3 raw material, which was further confirmed by Raman spectra of specially prepared Nd3+-doped LaBr3 and LaOBr samples. The luminescence properties of Nd3+ in different matrix were compared and discussed. The ultrasensitivity of Raman spectroscopy in detecting trace luminescent lanthanide ions shows good potential for analytical applications.

Impact of impurities and cryoconite on the optical properties of the Morteratsch Glacier (Swiss Alps)

Science.gov (United States)

Di Mauro, Biagio; Baccolo, Giovanni; Garzonio, Roberto; Giardino, Claudia; Massabò, Dario; Piazzalunga, Andrea; Rossini, Micol; Colombo, Roberto

2017-11-01

The amount of reflected energy by snow and ice plays a fundamental role in their melting processes. Different non-ice materials (carbonaceous particles, mineral dust (MD), microorganisms, algae, etc.) can decrease the reflectance of snow and ice promoting the melt. The object of this paper is to assess the capability of field and satellite (EO-1 Hyperion) hyperspectral data to characterize the impact of light-absorbing impurities (LAIs) on the surface reflectance of ice and snow of the Vadret da Morteratsch, a large valley glacier in the Swiss Alps. The spatial distribution of both narrow-band and broad-band indices derived from Hyperion was analyzed in relation to ice and snow impurities. In situ and laboratory reflectance spectra were acquired to characterize the optical properties of ice and cryoconite samples. The concentrations of elemental carbon (EC), organic carbon (OC) and levoglucosan were also determined to characterize the impurities found in cryoconite. Multi-wavelength absorbance spectra were measured to compare the optical properties of cryoconite samples and local moraine sediments. In situ reflectance spectra showed that the presence of impurities reduced ice reflectance in visible wavelengths by 80-90 %. Satellite data also showed the outcropping of dust during the melting season in the upper parts of the glacier, revealing that seasonal input of atmospheric dust can decrease the reflectance also in the accumulation zone of the glacier. The presence of EC and OC in cryoconite samples suggests a relevant role of carbonaceous and organic material in the darkening of the ablation zone. This darkening effect is added to that caused by fine debris from lateral moraines, which is assumed to represent a large fraction of cryoconite. Possible input of anthropogenic activity cannot be excluded and further research is needed to assess the role of human activities in the darkening process of glaciers observed in recent years.

Impurity solitons with quadratic nonlinearities

DEFF Research Database (Denmark)

Clausen, Carl A. Balslev; Torres, Juan P-; Torner, Lluis

1998-01-01

We fmd families of solitary waves mediated by parametric mixing in quadratic nonlinear media that are localized at point-defect impurities. Solitons localized at attractive impurities are found to be dynamically stable. It is shown that localization at the impurity modifies strongly the soliton...

Analyzing the Radiation Properties of High-Z Impurities in High-Temperature Plasmas

International Nuclear Information System (INIS)

Reinke, M. L.; Ince-Cushman, A.; Podpaly, Y.; Rice, J. E.; Bitter, M.; Hill, K. W.; Fournier, K. B.; Gu, M. F.

2009-01-01

Most tokamak-based reactor concepts require the use of noble gases to form either a radiative mantle or divertor to reduce conductive heat exhaust to tolerable levels for plasma facing components. Predicting the power loss necessary from impurity radiation is done using electron temperature-dependent 'cooling-curves' derived from ab initio atomic physics models. We present here a technique to verify such modeling using highly radiative, argon infused discharges on Alcator C-Mod. A novel x-ray crystal imaging spectrometer is used to measure spatially resolved profiles of line-emissivity, constraining impurity transport simulations. Experimental data from soft x-ray diodes, bare AXUV diodes and foil bolometers are used to determine the local emissivity in three overlapping spectral bands, which are quantitatively compared to models. Comparison of broadband measurements show agreement between experiment and modeling in the core, but not over the entire profile, with the differences likely due to errors in the assumed radial impurity transport outside of the core. Comparison of Ar 16+ x-ray line emission modeling to measurements suggests an additional problem with the collisional-radiative modeling of that charge state.

Time-Dependent Impurity in Ultracold Fermions: Orthogonality Catastrophe and Beyond

Directory of Open Access Journals (Sweden)

Michael Knap

2012-12-01

Full Text Available The recent experimental realization of strongly imbalanced mixtures of ultracold atoms opens new possibilities for studying impurity dynamics in a controlled setting. In this paper, we discuss how the techniques of atomic physics can be used to explore new regimes and manifestations of Anderson’s orthogonality catastrophe (OC, which could not be accessed in solid-state systems. Specifically, we consider a system of impurity atoms, localized by a strong optical-lattice potential, immersed in a sea of itinerant Fermi atoms. We point out that the Ramsey-interference-type experiments with the impurity atoms allow one to study the OC in the time domain, while radio-frequency (RF spectroscopy probes the OC in the frequency domain. The OC in such systems is universal, not only in the long-time limit, but also for all times and is determined fully by the impurity-scattering length and the Fermi wave vector of the itinerant fermions. We calculate the universal Ramsey response and RF-absorption spectra. In addition to the standard power-law contributions, which correspond to the excitation of multiple particle-hole pairs near the Fermi surface, we identify a novel, important contribution to the OC that comes from exciting one extra particle from the bottom of the itinerant band. This contribution gives rise to a nonanalytic feature in the RF-absorption spectra, which shows a nontrivial dependence on the scattering length, and evolves into a true power-law singularity with the universal exponent 1/4 at the unitarity. We extend our discussion to spin-echo-type experiments, and show that they probe more complicated nonequilibirum dynamics of the Fermi gas in processes in which an impurity switches between states with different interaction strength several times; such processes play an important role in the Kondo problem, but remained out of reach in the solid-state systems. We show that, alternatively, the OC can be seen in the energy-counting statistics

Impurity-generated non-Abelions

Science.gov (United States)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by

Phonon-impurity relaxation and acoustic wave absorption in yttrium-aluminium garnet crystals with impurities

International Nuclear Information System (INIS)

Ivanov, S.N.; Kotelyanskij, I.M.; Medved', V.V.

1983-01-01

The experimental results of investigations of the influence of substitution impurities in the yttrium-aluminium garnet lattice on absorption of high-frequency acoustic waves are presented. It is shown that the phonon-impurity relaxation processses affect at most the wave absorption and have resonance character when the acoustic wave interacts with the thermal phonon group in the vicinity of the perturbed part of the phonon spectrum caused by the impurity. The differences of time values between inelastic and elastic thermal phonons relaxations determined from the data on longitudinal and shear waves in pure and impurity garnet crystals are discussed

Divertor experiment for impurity control in DIVA

International Nuclear Information System (INIS)

Nagami, Masayuki

1979-04-01

Divertor actions of controlling the impurities and the transport of impurity ions in the plasma have been investigated in the DIVA device. Following are the results: (1) The radial transport of impurity ions is not described only by neoclassical theory, but it is strongly influenced by anomalous process. Radial diffusion of impurity ions across the whole minor radius is well described by a neoclassical diffusion superposed by the anomalous diffusion for protons. Due to this anomalous process, which spreads the radial density profile of impurity ions, 80 to 90% of the impurity flux in the plasma outer edge is shielded even in a nondiverted discharge. (2) The divertor reduces the impurity flux entering the main plasma by a factor of 2 to 4. The impurity ions shielded by the scrape-off plasma are rapidly guided into the burial chamber with a poloidal excursion time roughly equal to that of the scrape-off plasma. (3) The divertor reduces the impurity ion flux onto the main vacuum chamber by guiding the impurity ions diffusing from the main plasma into the burial chamber, thereby reducing the plasma-wall interaction caused by diffusing impurity ions at the main vacuum chamber. The impurity ions produced in the burial chamber may flow back to the main plasma through the scrape-off layer. However, roughly only 0.3% of the impurity flux into the scrape-off plasma in the burial chamber penetrates into the main plasma due to the impurity backflow. (4) A slight cooling of the scrape-off plasma with light-impurity injection effectively reduces the metal impurity production at the first wall by reducing the potential difference between the plasma and the wall, thereby reducing the accumulation of the metal impurity in the discharge. Radiation cooling by low-Z impurities in the plasma outer edge, which may become an important feature in future large tokamaks both with and without divertor, is numerically evaluated for carbon, oxygen and neon. (author)

Multilayer mirror based monitors for impurity controls in large fusion reactor type devices

International Nuclear Information System (INIS)

Regan, S.P.; May, M.J.; Soukhanovskii, V.; Finkenthal, M.; Moos, H.W.

1995-01-01

Multilayer Mirror (MLM) based monitors are compact, high throughput diagnostics capable of extracting XUV emissions (the wavelength range including the soft-x-ray and the extreme ultraviolet, 10 angstrom to 304 angstrom) of impurities from the harsh environment of large fusion reactor type devices. For several years the Plasma Spectroscopy Group at Johns Hopkins University has investigated the application of MLM based XUV spectroscopic diagnostics for magnetically confined fusion plasmas. MLM based monitors have been constructed for and extensively used on DIII-D, Alcator C-mod, TEXT, Phaedrus-T, and CDX-U tokamaks to study the impurity behavior of elements ranging from He to Mo. On ITER MLM based devices would be used to monitor the spectral line emissions from Li I-like to F I-like charge states of Fe, Cr, and Ni, as well as extractors for the bands of emissions from high Z elements such as Mo or W for impurity controls of the fusion plasma. In addition to monitoring the impurity emissions from the main plasma, MLM based devices can also be adapted for radiation measurements of low Z elements in the divertor. The concepts and designs of these MLM based monitors for impurity controls in ITER will be presented. The results of neutron irradiation experiments of the MLMs performed in the Los Alamos Spallation Radiation Effects Facility (LASREF) at the Los Alamos National Laboratory will also be discussed. These preliminary neutron exposure studies show that the dispersive and reflective qualities of the MLMs were not affected in a significant manner

Transport properties and Raman spectra of impurity substituted MgB2

International Nuclear Information System (INIS)

Masui, T.

2007-01-01

Recent advances in the study of MgB 2 are reviewed, with focus on the transport properties and Raman scattering measurements for impurity substituted crystals. Carbon and Aluminium substitution change band filling, introduce intraband and interband scattering. These effects are seen in the temperature dependence of resistivity, Hall coefficients, and phonon peak of Raman spectra. Manganese substitution introduces magnetic scattering, that increases resistivity but gives little change in Raman spectra. The effect of disorder in neutron irradiated samples is also discussed

Electron exchange between tin impurity U{sup –} centers in PbS{sub z}Se{sub 1–z} alloys

Energy Technology Data Exchange (ETDEWEB)

Marchenko, A. V. [Alexander Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Seregin, P. P., E-mail: ppseregin@mail.ru; Rasnjuk, A. N.; Kiselev, V. S. [Alexander Herzen State Pedagogical University of Russia (Russian Federation)

2016-07-15

Using emission {sup 119mm}Sn({sup 119m}Sn) and {sup 119}Sb({sup 119m}Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS{sub z}Se{sub 1–z} alloys substitute lead atoms and are two-electron donors with negative correlation energy (U{sup –} centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at z ≥ 0.5 against the background of allowed valence-band states at z ≤ 0.4. The electron exchange between neutral and doubly ionized tin U{sup –} centers in partially compensated Pb{sub 0.99}Sn{sub 0.005}Na{sub 0.005}S{sub z}Se{sub 1–z} alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with z = 1 to 0.049(5) eV for compositions with c ≤ 0. For all z, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

Negative magnetoresistance in perpendicular of the superlattices axis weak magnetic field at scattering of impurity ions

International Nuclear Information System (INIS)

Askerov, B. M.; Figarova, R.; Guseynov, G.I.

2012-01-01

Full Text : The transverse magnetoresistance in superlattices with the cosine dispersion law of conduction electrons in a case, when a weak magnetic field in plane of layer at scattering of the charge carriers of impurity ions has been studied. It has been shown that in a quasi-two-dimensional case the magnetoresistance was positive, while in a quasi-three-dimensional case can become negative depending of a degree of mini-band filling. Such behavior of magnetoresistance, apparently, has been related to presence in a mini-band of region with the negative effective mass

The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

International Nuclear Information System (INIS)

Wang Hongxia; Yan Yu; Mohammed, Y. Sh.; Du Xiaobo; Li Kai; Jin Hanmin

2009-01-01

The electronic structure and ferromagnetic stability of Co-doped SnO 2 are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U Co transforms the ground state of Co-doped SnO 2 to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U Co calculations show that the pure substitutional Co defects in SnO 2 cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U Co calculations are not changed by the correction of band gap.

Low Z impurity transport in tokamaks

International Nuclear Information System (INIS)

Hawryluk, R.J.; Suckewer, S.; Hirshman, S.P.

1978-10-01

Low Z impurity transport in tokamaks was simulated with a one-dimensional impurity transport model including both neoclassical and anomalous transport. The neoclassical fluxes are due to collisions between the background plasma and impurity ions as well as collisions between the various ionization states. The evaluation of the neoclassical fluxes takes into account the different collisionality regimes of the background plasma and the impurity ions. A limiter scrapeoff model is used to define the boundary conditions for the impurity ions in the plasma periphery. In order to account for the spectroscopic measurements of power radiated by the lower ionization states, fluxes due to anomalous transport are included. The sensitivity of the results to uncertainties in rate coefficients and plasma parameters in the periphery are investigated. The implications of the transport model for spectroscopic evaluation of impurity concentrations, impurity fluxes, and radiated power from line emission measurements are discussed

Magnetization reversal of the transverse domain wall confined between two clusters of magnetic impurities in a ferromagnetic planar nanowire

Energy Technology Data Exchange (ETDEWEB)

Toscano, D., E-mail: danilotoscano@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Leonel, S.A., E-mail: sidiney@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Coura, P.Z., E-mail: pablo@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Sato, F., E-mail: sjfsato@fisica.ufjf.br [Departamento de Física, Laboratório de Simulação Computacional, Universidade Federal de Juiz de Fora, Juiz de Fora, Minas Gerais 36036–330 (Brazil); Costa, B.V., E-mail: bvc@fisica.ufmg.br [Departamento de Física, Laboratório de Simulação, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123–970 (Brazil); Vázquez, M., E-mail: mvazquez@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC. 28049 Madrid (Spain)

2016-12-01

Numerical simulations have been used to investigate the polarity reversal of the transverse domain wall in rectangular magnetic nanowires and the stabilization of the domain wall position after occurring the polarity reversal. In order to control the wall position we have considered two clusters of magnetic impurities, identical and equidistant from the nanowire width axis. Traps of pinning and blocking for the transverse domain wall can be originated from magnetic impurities, consisting of a local variation of the exchange constant. Under suitable excitation amplitudes it is possible to switch the polarity of the transverse domain wall by applying a nanosecond axial magnetic field pulse in a fast and controllable way. - Highlights: • Traps for pinning and blocking transverse domain walls are proposed. • The traps consisting of localized modifications of the magnetic properties. • The wall polarity can be reversed in a fast and controllable way.

Entanglement entropy of a three-spin-interacting spin chain with a time-reversal-breaking impurity at one boundary

Science.gov (United States)

Nag, Tanay; Rajak, Atanu

2018-04-01

We investigate the effect of a time-reversal-breaking impurity term (of strength λd) on both the equilibrium and nonequilibrium critical properties of entanglement entropy (EE) in a three-spin-interacting transverse Ising model, which can be mapped to a p -wave superconducting chain with next-nearest-neighbor hopping and interaction. Importantly, we find that the logarithmic scaling of the EE with block size remains unaffected by the application of the impurity term, although, the coefficient (i.e., central charge) varies logarithmically with the impurity strength for a lower range of λd and eventually saturates with an exponential damping factor [˜exp(-λd) ] for the phase boundaries shared with the phase containing two Majorana edge modes. On the other hand, it receives a linear correction in term of λd for an another phase boundary. Finally, we focus to study the effect of the impurity in the time evolution of the EE for the critical quenching case where the impurity term is applied only to the final Hamiltonian. Interestingly, it has been shown that for all the phase boundaries, contrary to the equilibrium case, the saturation value of the EE increases logarithmically with the strength of impurity in a certain regime of λd and finally, for higher values of λd, it increases very slowly dictated by an exponential damping factor. The impurity-induced behavior of EE might bear some deep underlying connection to thermalization.

The impurity transport in HT-6B tokamak

International Nuclear Information System (INIS)

Huang Rong; Xie Jikang; Li Linzhong; He Yexi; Wang Shuya; Deng Chuanbao; Li Guoxiang; Qiu Lijian

1992-06-01

The quasi-stationary profiles of the impurity ionization stages in HT-6B tokamak were determined by monitoring the VUV (vacuum ultraviolet) and visible line emissions from impurities. An impurity transport code was set up. The impurity transport coefficients and other parameters of impurities in that device were simulated and determined. From the measurement of impurity emission profiles and simulation analysis, it is concluded that the impurity confinement is improved and the impurity recycling is reduced by the slow magnetic compression. Some characteristics of impurity transport in that device are also discussed

Temperature dependence of the magnetic hyperfine field at an s–p impurity diluted in RNi{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Oliveira, A.L. de, E-mail: alexandre.oliveira@ifrj.edu.br [Instituto Federal de Educação, Ciência e Tecnologia do Rio de Janeiro, Campus Nilópolis, RJ (Brazil); Chaves, C.M., E-mail: cmch@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, RJ (Brazil); Oliveira, N.A. de [Instituto de Física Armando Dias Tavares, Universidade do Estado do Rio de Janeiro, Rio de Janeiro (Brazil); Troper, A. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, RJ (Brazil)

2016-03-01

We study the formation of local magnetic moments and magnetic hyperfine fields at an s–p impurity diluted in intermetallic Laves phase compounds RNi{sub 2} (R=Nd, Sm, Gd, Tb, Dy) at finite temperatures. We start with a clean host and later the impurity is introduced. The host has two-coupled (R and Ni) sublattice Hubbard Hamiltonians but the Ni sublattice can be disregarded because its d band, being full, is magnetically ineffective. Also, the effect of the 4f electrons of R is represented by the polarization they produce on the d band. This leaves us with a lattice of effective rare earth R-ions with polarized electrons. For the dd electronic interaction we use the Hubbard–Stratonovich identity in a functional integral approach in the static saddle point approximation. - Highlights: • Functional integral method in the static limit, producing site disorder, is used. • The site disorder is treated with the Coherent Potential Approximation (CPA). • Non magnetic Ni generates an effective lattice with only a polarized R d band. • The effective R lattice differ from the pure R metal: Results and Discussions. • The experimental curve of hyperfine fields × temperature are very well reproduced.

Theoretical study of hyperfine fields due to S-P and transition impurities in gadolinium matrix

International Nuclear Information System (INIS)

Santos Leal, C.E. dos.

1985-01-01

This work presents a systematic theoretical study for the hyperfine field due to diluted s-p-and transition impurities in metallic gadolinium matrices. The peculiarities de a gadolinium matrix are shown, they are characterized by a semi-completed 4f-shell, which is far from (below) the energetic levels such as the type s-p and d-conduction bands. (author)

Electric-field gradients at Ta donor impurities in Cr{sub 2}O{sub 3}(Ta) semiconductor

Energy Technology Data Exchange (ETDEWEB)

Darriba, G.N. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Errico, L.A. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino (Argentina); Munoz, E.L; Richard, D. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Eversheim, P.D. [Helmholtz-Institut fuer Strahlen-und Kernphysik (H-ISKP), Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany); Renteria, M., E-mail: renteria@fisica.unlp.edu.a [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

2009-10-01

We report perturbed-angular-correlation (PAC) experiments on {sup 181}Hf(->{sup 181}Ta)-implanted corundum Cr{sub 2}O{sub 3} powder samples in order to determine the magnitude and symmetry of the electric-field gradient (EFG) tensor at Ta donor impurity sites of this semiconductor. These results are analyzed in the framework of ab initio full-potential augmented-plane wave plus local orbitals (FP-APW+lo) calculations. The results are also compared with EFG results coming from PAC experiments in isomorphous alpha-Al{sub 2}O{sub 3} and alpha-Fe{sub 2}O{sub 3} doped with {sup 111}In->{sup 111}Cd and {sup 181}Hf->{sup 181}Ta tracers. This combined analysis enables us to quantify the magnitude of the lattice relaxations induced by the presence of the impurity and to determine the charge state of the impurity donor level introduced by Ta in the band gap of the semiconductor.

Impurity gettering in semiconductors

Science.gov (United States)

Sopori, Bhushan L.

1995-01-01

A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

Impurity-induced moments in underdoped cuprates

International Nuclear Information System (INIS)

Khaliullin, G.; Kilian, R.; Krivenko, S.; Fulde, P.

1997-01-01

We examine the effect of a nonmagnetic impurity in a two-dimensional spin liquid in the spin-gap phase, employing a drone-fermion representation of spin-1/2 operators. The properties of the local moment induced in the vicinity of the impurity are investigated and an expression for the nuclear-magnetic-resonance Knight shift is derived, which we compare with experimental results. Introducing a second impurity into the spin liquid an antiferromagnetic interaction between the moments is found when the two impurities are located on different sublattices. The presence of many impurities leads to a screening of this interaction as is shown by means of a coherent-potential approximation. Further, the Kondo screening of an impurity-induced local spin by charge carriers is discussed. copyright 1997 The American Physical Society

Linear and nonlinear optical properties of multilayered spherical quantum dots: Effects of geometrical size, hydrogenic impurity, hydrostatic pressure and temperature

International Nuclear Information System (INIS)

Karimi, M.J.; Rezaei, G.; Nazari, M.

2014-01-01

Based on the effective mass and parabolic one band approximations, simultaneous effects of the geometrical size, hydrogenic impurity, hydrostatic pressure, and temperature on the intersubband optical absorption coefficients and refractive index changes in multilayered spherical quantum dots are studied. Energy eigenvalues and eigenvectors are calculated using the fourth-order Runge–Kutta method and optical properties are obtained using the compact density matrix approach. The results indicate that the hydrogenic impurity, hydrostatic pressure, temperature and geometrical parameters such as the well and barrier widths have a great influence on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes. -- Highlights: • Hydrogenic impurity effects on the optical properties of a MSQD are investigated. • Hydrostatic pressure and temperature effects are also studied. • Hydrogenic impurity has a great influence on the linear and nonlinear ACs and RICs. • Hydrostatic pressure and temperature change the linear and nonlinear ACs and RICs

MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

Impurities in uranium process solutions

International Nuclear Information System (INIS)

Boydell, D.W.

1980-01-01

Several uranium purification circuits are presented in tabular form together with the average major impurity levels associated with each. The more common unit operations in these circuits, namely strong- and weak-base ion-exchange, solvent extraction and the precipitation of impurities are then discussed individually. Particular attention is paid to the effect and removal of impurities in each of these four unit operations. (author)

Neo-classical impurity transport

International Nuclear Information System (INIS)

Stringer, T.E.

The neo-classical theory for impurity transport in a toroidal plasma is outlined, and the results discussed. A general account is given of the impurity behaviour and its dependence on collisionality. The underlying physics is described with special attention to the role of the poloidal rotation

Theory of resonant donor-impurity magnetopolaron in semiconductor quantum wells

International Nuclear Information System (INIS)

Osorio, F.A.P.; Maialle, M.Z.; Hipolito, O.

1989-11-01

We report for the first time a theoretical calculation for the resonant donor impurity magnetopolaron in GaAs-GA 1-x Al x As quantum-well structures. The intra donor 1s → 2p, transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behaviour due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data. (author). 18 refs, 1 fig

Measuring and controlling method for organic impurities

International Nuclear Information System (INIS)

Aizawa, Motohiro; Igarashi, Hiroo

1995-01-01

The present invention concerns measurement and control for organic impurities contained in ultrapurified water for use in a nuclear power plant. A specimen containing organic impurities leached out of anionic exchange resins and cationic exchange resins is introduced to an organic material decomposing section to decompose organic impurities into organic carbon and other decomposed products. Sulfate ions, nitrate ions, nitrite ions and carbon dioxide are produced by the decomposition of the organic impurities. As a next step, carbon dioxide in the decomposed products is separated by deaerating with a nitrogen gas or an argon gas and then a TOC concentration is measured by a non-dispersion-type infrared spectrometer. Further, a specimen from which carbon dioxide was separated is introduced to a column filled with ion exchange resins and, after concentrating inorganic ion impurities, the inorganic ion impurities are identified by using a measuring theory of an ion chromatographic method of eluting and separating inorganic ion impurities and detecting them based on the change of electroconductivity depending on the kinds of the inorganic ion impurities. Organic impurities can be measured and controlled, to improve the reliability of water quality control. (N.H.)

Dynamical impurity problems

International Nuclear Information System (INIS)

Emery, V.J.; Kivelson, S.A.

1993-01-01

In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class

Dynamical impurity problems

Energy Technology Data Exchange (ETDEWEB)

Emery, V.J. [Brookhaven National Lab., Upton, NY (United States); Kivelson, S.A. [California Univ., Los Angeles, CA (United States). Dept. of Physics

1993-12-31

In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

Energy Technology Data Exchange (ETDEWEB)

Stehr, D.

2007-12-28

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

Identification and characterization of potential impurities of donepezil.

Science.gov (United States)

Krishna Reddy, K V S R; Moses Babu, J; Kumar, P Anil; Chandrashekar, E R R; Mathad, Vijayavitthal T; Eswaraiah, S; Reddy, M Satyanarayana; Vyas, K

2004-09-03

Five unknown impurities ranging from 0.05 to 0.2% in donepezil were detected by a simple isocratic reversed-phase high performance liquid chromatography (HPLC). These impurities were isolated from crude sample of donepezil using isocratic reversed-phase preparative high performance liquid chromatography. Based on the spectral data (IR, NMR and MS), the structures of these impurities were characterised as 5,6-dimethoxy-2-(4-pyridylmethyl)-1-indanone (impurity I), 4-(5,6-dimethoxy-2,3-dihydro-1H-2-indenylmethyl) piperidine (impurity II), 2-(1-benzyl-4-piperdylmethyl)-5,6-dimethoxy-1-indanol (impurity III) 1-benzyl-4(5,6-dimethoxy-2,3-dihydro-1H-2-indenylmethyl) piperidine (impurity IV) and 1,1-dibenzyl-4(5,6-dimethoxy-1-oxo-2,3-dihydro-2H-2-indenylmethyl)hexahydropyridinium bromide (impurity V). The synthesis of these impurities and their formation was discussed.

The role of the excited impurity levels on the metal-non metal transition

International Nuclear Information System (INIS)

Silva, M.S.F. da; Makler, S.S.; Anda, E.V.

1983-01-01

The electronic density of states for the impurity bands in doped semiconductors is calculated using the Green function method. The system is described by a Hamiltonian with local Coulomb interactions represented in a tight binding basis composed by two orbitals per site. The electronic correlation is treated in the CPA approximation. To calculate the configurational average for this structural disordered system a diagrammatic scheme is developed. It represents an extension of the Matsubara and Toyozawa method for the case of two hybridized bands in the presence of electronic correlation. The excited levels show to play a crutial role in the undestanding of the metal-non metal transition. This work represents an improvement of a previous result. The particular case of Si : P is analyzed. (author) [pt

The role of the excited impurity levels on the metal-non metal transition

International Nuclear Information System (INIS)

Silva, M.S.F. da; Makler, S.S.; Anda, E.V.

1983-01-01

The electronic density of states for the impurity bands in doped semiconductors is calculated using the Green function method. The system is described by a Hamiltonian with local Coulomb interactions represented in a tight binding basis composed by two orbitals per site. The electronic correlation is treated in the CPA approximation. To calculate the configurational average for this structural disordered system a diagrammatic scheme is developed. It represents an extension of the Matsubara and Toyozawa method for the case of two hybridized bands in the presence of electronic correlation. The excited levels shown to play a crutial role in the understanding of the metal-non metal transition. This work represents an improvement of a previous result. The particular case of Si:P is analyzed. (Author) [pt

Electronic band structure study of colossal magnetoresistance in Tl 2Mn 2O 7

Science.gov (United States)

Seo, D.-K.; Whangbo, M.-H.; Subramanian, M. A.

1997-02-01

The electronic structure of Tl 2Mn 2O 7 was examined by performing tight binding band calculations. The overlap between the Mn t 2g- and Tl 6 s-block bands results in a partial filling of the Tl 6 s-block bands. The associated Fermi surface consists of 12 cigar-shape electron pockets with each electron pocket about {1}/{1000} of the first Brillouin zone in size. The Tl 6 s-block bands have orbital contributions from the Mn atoms, and the carrier density is very low. These are important for the occurrence of a colossal magnetoresistance in Tl 2Mn 2O 7.

Impurity Induced Phase Competition and Supersolidity

Science.gov (United States)

Karmakar, Madhuparna; Ganesh, R.

2017-12-01

Several material families show competition between superconductivity and other orders. When such competition is driven by doping, it invariably involves spatial inhomogeneities which can seed competing orders. We study impurity-induced charge order in the attractive Hubbard model, a prototypical model for competition between superconductivity and charge density wave order. We show that a single impurity induces a charge-ordered texture over a length scale set by the energy cost of the competing phase. Our results are consistent with a strong-coupling field theory proposed earlier in which superconducting and charge order parameters form components of an SO(3) vector field. To discuss the effects of multiple impurities, we focus on two cases: correlated and random distributions. In the correlated case, the CDW puddles around each impurity overlap coherently leading to a "supersolid" phase with coexisting pairing and charge order. In contrast, a random distribution of impurities does not lead to coherent CDW formation. We argue that the energy lowering from coherent ordering can have a feedback effect, driving correlations between impurities. This can be understood as arising from an RKKY-like interaction, mediated by impurity textures. We discuss implications for charge order in the cuprates and doped CDW materials such as NbSe2.

Influence of impurities on the H{sub 2}/H{sub 2}O/Ni/YSZ electrode

Energy Technology Data Exchange (ETDEWEB)

Hoegh, J.

2005-05-15

contact area and 3) The sulfur adsorption on the Ni wire. An increasing water content in the atmosphere was seen to lower the polarization resistance at OCV and at anodic overpotentials, but it had no effect at cathodic overpotentials. It was hypothesized that water changes the properties of the impurities and hereby promote the electrode reaction at OCV and anodic overpotentials. A strong cathodic polarization <-2000 mV vs. air at 700 deg. C was seen to lower the polarization resistance by a factor of 5-60. It was hypothesized that the strong cathodic polarization reduces or partly reduces the impurities from oxide to metal. Hence, the blocking influence of impurities would be diminished. (au)

The effect of pushing-off of an impurity by the step at the initial stage of its capture in crystallization from a molecular beam

International Nuclear Information System (INIS)

Ruzaikin, M.P.; Ervie, Yu.Yu.

1996-01-01

A model of impurity capture by a train of growth steps at the initial (nonstationary) stage of doping in molecular-beam epitaxy is suggested. The model takes into account the processes of adsorption, desorption, and surface diffusion of impurity atoms and also their jump over the steps and blocking at the kinks of the matrix material. The exact expression of the thickness, dt of the transition region is obtained. It is shown that at low crystallization temperatures, pushing-off of impurity atoms by a step can give rise to a nonmonotonic (with a maximum) temperature dependence of dt and a decrease of dt with an increase of the growth rate observed experimentally

The impurity transport in HT-6M tokamak

International Nuclear Information System (INIS)

Xu Wei; Wan Baonian; Xie Jikang

2003-01-01

The space-time profile of impurities has been measured with a multichannel visible spectroscopic detect system and UV rotation-mirror system in the HT-6M tokamak. An ideal impurity transport code has been used to simulate impurities (carbon and oxygen) behaviour during the OHM discharge. The profiles of impurities diffusion and convection coefficient, impurities ion densities in different ionized state, loss power density and effective charge number have been derived. The impurity behaviour during low-hybrid current drive has also been analyzed, the results show that the confinement of particles, impurities and energy has been improved, and emission power and effective charge number have been reduced

On impurities transport in a tokamak

International Nuclear Information System (INIS)

Rozhanskij, V.A.

1980-01-01

Transport of impurity ions is analitically analized in the case when main plasma is in plateau or banana regimes but impurity ions - in the Pfirsch-Schlutter mode. It is shown that in the large region of parameters the impUrity transport represents a drift in a p oloidal electric field, averaged from magnetic surface with provision for disturbance of concentration on it. Therefore, transport velocity does not depend on Z value and impurity type, as well as collision frequency both in the plateau and banana regimes. A value of flows is determined by the value of poloidal rotation velocity. At the rotation velocity corresponding to the electric field directed from the centre to periphery impurities are thrown out of a discharge, in the reverse case the flow is directed inside. Refusal from the assumption that Zsub(eff) > approximately 2, does not considerably change the results of work. The approach developed in the process of work can be applied to the case when impurity ions are in the plateau or banana modes

Mechanisms of impurity diffusion in rutile

International Nuclear Information System (INIS)

Peterson, N.L.; Sasaki, J.

1984-01-01

Tracer diffusion of 46 Sc, 51 Cr, 54 Mn, 59 Fe, 60 Co, 63 Ni, and 95 Zr, was measured as functions of crystal orientation, temperature, and oxygen partial pressure in rutile single crystals using the radioactive tracer sectioning technique. Compared to cation self-diffusion, divalent impurities (e.g., Co and Ni) diffuse extremely rapidly in TiO 2 and exhibit a large anisotropy in the diffusion behavior; divalent-impurity diffusion parallel to the c-axis is much larger than it is perpendicular to the c-axis. The diffusion of trivalent impurity ions (Sc and Cr) and tetravalent impurity ions (Zr) is similar to cation self-diffusion, as a function of temperature and of oxygen partial pressure. The divalent impurity ions Co and Ni apparently diffuse as interstitial ions along open channels parallel to the c-axis. The results suggest that Sc, Cr, and Zr ions diffuse by an interstitialcy mechanism involving the simultaneous and cooperative migration of tetravalent interstitial titanium ions and the tracer-impurity ions. Iron ions diffused both as divalent and as trivalent ions. 8 figures

Impurity production and transport at limiters

International Nuclear Information System (INIS)

Matthews, G.F.

1989-01-01

This paper concentrates on the description and evaluation of experiments on the DITE tokamak. These are designed to characterise the processes involved in the production and transport of neutral and ionised impurities near carbon limiters. The need for good diagnostics in the scrape-off layer is highlighted. Langmuir probes are used to provide input data for models of impurity production at limiters. Observations of the radial profiles of carbon and oxygen impurities are compared with the code predictions. Changeover experiments involving hydrogen and helium plasmas are used as a means for investigating the role of the atomic physics and chemistry. The impurity control limiter (ICL) experiment is described which shows how geometry plays an important role in determining the spatial distributions of the neutral and ionised carbon. New diagnostics are required to study the flux and charge state distribution of impurities in the boundary. Preliminary results from an in-situ plasma ion mass-spectrometer are presented. The role of oxygen and the importance of evaluating the wall sources of impurity are emphasised. (orig.)

Investigations of impurity control in JET using fuelling, and interpretation of experiments using the LIM impurity code

International Nuclear Information System (INIS)

Gondhalekar, A.; Stangeby, P.C.; Elder, J.D.

1994-01-01

Inhibition of contamination of the plasma core in JET by edge impurities during high power heating of deuterium plasmas in limiter configuration using fuelling is demonstrated. By injecting deuterium gas during heating, in the presence of a much larger recycling deuterium flux, a reduction of more than a factor of 2 was effected in n z (0)/Φ z , the ratio of central impurity density to impurity influx at the plasma edge. The reduction in n z (0) was obtained without much effect on peak electron temperature and density. Reduction of plasma contamination by gas fuelling was observed also when hot spots formed on the limiter, a condition that without simultaneous gas fuelling culminated in runaway plasma contamination. Detailed analysis of the experiments is undertaken with the purpose of identifying the processes by which plasma contamination was inhibited, employing standard limiter plasma contamination modelling. Processes which might produce the observed impurity inhibiting effects of gas injection include: (a) reduction in impurity production at the limiter; (b) increase in impurity screening in the scrape-off layer; (c) increase in radial impurity transport at the plasma edge; (d) increase in average deuteron flow velocity to the limiter along the scrape-off layer. These are examined in detail using the Monte Carlo limiter impurity transport code LIM. Bearing in mind that uncertainties exist both in the choice of appropriate modelling assumptions to be used and in the measurement of required edge plasma parameters, changes in n z (0)/Φ z by a factor of 2 are at the limit of the present modelling capability. However, comparison between LIM code simulations and measurements of plasma impurity content indicate that the standard limiter plasma contamination model may not be adequate and that other processes need to be added in order to be able to describe the experiments in JET. (author). 24 refs, 2 figs, 8 tabs

Void growth suppression by dislocation impurity atmospheres

International Nuclear Information System (INIS)

Weertman, J.; Green, W.V.

1976-01-01

A detailed calculation is given of the effect of an impurity atmosphere on void growth under irradiation damage conditions. Norris has proposed that such an atmosphere can suppress void growth. The hydrostatic stress field of a dislocation that is surrounded by an impurity atmosphere was found and used to calculate the change in the effective radius of a dislocation line as a sink for interstitials and vacancies. The calculation of the impurity concentration in a Cottrell cloud takes into account the change in hydrostatic pressure produced by the presence of the cloud itself. It is found that void growth is eliminated whenever dislocations are surrounded by a condensed atmosphere of either oversized substitutional impurity atoms or interstitial impurity atoms. A condensed atmosphere will form whenever the average impurity concentration is larger than a critical concentration

Moessbauer Studies of Implanted Impurities in Solids

CERN Multimedia

2002-01-01

Moessbauer studies were performed on implanted radioactive impurities in semiconductors and metals. Radioactive isotopes (from the ISOLDE facility) decaying to a Moessbauer isotope were utilized to investigate electronic and vibrational properties of impurities and impurity-defect structures. This information is inferred from the measured impurity hyperfine interactions and Debye-Waller factor. In semiconductors isoelectronic, shallow and deep level impurities have been implanted. Complex impurity defects have been produced by the implantation process (correlated damage) or by recoil effects from the nuclear decay in both semiconductors and metals. Annealing mechanisms of the defects have been studied. \\\\ \\\\ In silicon amorphised implanted layers have been recrystallized epitaxially by rapid-thermal-annealing techniques yielding highly supersaturated, electrically-active donor concentrations. Their dissolution and migration mechanisms have been investigated in detail. The electronic configuration of Sb donors...

Low-Z impurities in PLT

International Nuclear Information System (INIS)

Hinnov, E.; Suckewer, S.; Bol, K.; Hawryluk, R.; Hosea, J.; Meservey, E.

1977-11-01

Low-Z impurities concentrations (oxygen and carbon) have been measured in different discharges in PLT. The contribution to Z/sub eff/, influx rates and radiation losses by oxygen and carbon were obtained. An inverse correlation was found between the low-Z impurity density (and also the edge ion temperature) and the high-Z impurity (tungsten) density. A one-dimensional computer transport model has been used to calculate the spatial profiles of different oxygen and carbon ionization states. This model predicts that fully stripped oxygen and carbon ions should exist near the plasma periphery

Impurity Correction Techniques Applied to Existing Doping Measurements of Impurities in Zinc

Science.gov (United States)

Pearce, J. V.; Sun, J. P.; Zhang, J. T.; Deng, X. L.

2017-01-01

Impurities represent the most significant source of uncertainty in most metal fixed points used for the realization of the International Temperature Scale of 1990 (ITS-90). There are a number of different methods for quantifying the effect of impurities on the freezing temperature of ITS-90 fixed points, many of which rely on an accurate knowledge of the liquidus slope in the limit of low concentration. A key method of determining the liquidus slope is to measure the freezing temperature of a fixed-point material as it is progressively doped with a known amount of impurity. Recently, a series of measurements of the freezing and melting temperature of `slim' Zn fixed-point cells doped with Ag, Fe, Ni, and Pb were presented. Here, additional measurements of the Zn-X system are presented using Ga as a dopant, and the data (Zn-Ag, Zn-Fe, Zn-Ni, Zn-Pb, and Zn-Ga) have been re-analyzed to demonstrate the use of a fitting method based on Scheil solidification which is applied to both melting and freezing curves. In addition, the utility of the Sum of Individual Estimates method is explored with these systems in the context of a recently enhanced database of liquidus slopes of impurities in Zn in the limit of low concentration.

Solid-phase synthesis of 2{sup '}-O-methoxyethyl oligonucleotides using dimeric phosphoramidate blocks

Energy Technology Data Exchange (ETDEWEB)

Yu, Gi Weon; Kang, Yong Han [Dept. of Applied Chemistry, Hanyang University, Ansan (Korea, Republic of)

2016-11-15

This research focused on the method of using dimeric phosphoramidite blocks to synthesize oligonucleotides for development as oligonucleotide drugs. A 16-mer oligonucleotide with the randomly selected sequence of C*C*T*C*G*C *T*C*T*C*G*C*C* C*G*C was synthesized using CC, GC, and TC dimers, a combination of monomers and dimers, or only monomers as building blocks. Using dimer blocks in this synthetic method provided a significant decrease in critical impurities that had similar properties to the main product, which was confirmed by LC-MS and HPLC analysis.

Plasmon band gap generated by intense ion acoustic waves

International Nuclear Information System (INIS)

Son, S.; Ku, S.

2010-01-01

In the presence of an intense ion acoustic wave, the energy-momentum dispersion relation of plasmons is strongly modified to exhibit a band gap structure. The intensity of an ion acoustic wave might be measured from the band gap width. The plasmon band gap can be used to block the nonlinear cascading channel of the Langmuir wave decay.

Symmetry transition via tetravalent impurity and investigations on magnetic properties of Li0.5Fe2.5O4

Science.gov (United States)

Kounsalye, Jitendra S.; Kharat, Prashant B.; Chavan, Apparao R.; Humbe, Ashok V.; Borade, R. M.; Jadhav, K. M.

2018-04-01

The present study, deals with the phase symmetry transformation of lithium ferrite after introducing tetravalent (Ti4+) impurity. The sol-gel auto combustion technique was adopted for the synthesis of nanoparticle samples with generic chemical formula Li0.5Fe2.5O4 and Li0.55Ti0.10Fe2.35O4. The synthesized nanoparticles were characterized by X-ray diffraction (XRD) technique for structural analysis. The XRD patterns show the single phase cubic structure without any impurity phase but the P4332 to Fd-3m transformation was observed after introducing Ti4+ impurity. The Nano size of the synthesized particles was confirmed by crystallite size ( 20nm) calculated using Debye-Scherrer's formula. The Fourier transform infrared spectroscopy (FTIR) studies shows shifting of band frequencies which reflect the structural changes after tetravalent substitutional impurities. The magnetic properties were studied through pulse field hysteresis loop (M-H loop) technique at room temperature, the M-H loops showdecrease in magnetic properties afternonmagnetic Ti4+ ion substitution. This is attributed to transition of inverse spinel structure of lithium ferrite to random spinel structure.

Impurity energy level in the Haldane gap

International Nuclear Information System (INIS)

Wang Wei; Lu Yu

1995-11-01

An impurity bond J' in a periodic 1D antiferromagnetic spin 1 chain with exchange J is considered. Using the numerical density matrix renormalization group method, we find an impurity energy level in the Haldane gap, corresponding to a bound state near the impurity bond. When J' J. The impurity level appears only when the deviation dev = (J'- J)/J' is greater than B c , which is close to 0.3 in our calculation. (author). 15 refs, 4 figs

Multi-impurity polarons in a dilute Bose-Einstein condensate

International Nuclear Information System (INIS)

Santamore, D H; Timmermans, Eddy

2011-01-01

We describe the ground state of a large, dilute, neutral atom Bose-Einstein condensate (BEC) doped with N strongly coupled mutually indistinguishable, bosonic neutral atoms (referred to as ‘impurity’) in the polaron regime where the BEC density response to the impurity atoms remains significantly smaller than the average density of the surrounding BEC. We find that N impurity atoms with N ≠ 1 can self-localize at a lower value of the impurity-boson interaction strength than a single impurity atom. When the ‘bare’ short-range impurity-impurity repulsion does not play a significant role, the self-localization of multiple bosonic impurity atoms into the same single particle orbital (which we call co-self-localization) is the nucleation process of the phase separation transition. When the short-range impurity-impurity repulsion successfully competes with co-self-localization, the system may form a stable liquid of self-localized single impurity polarons. (paper)

Collision of impurities with Bose–Einstein condensates

Science.gov (United States)

Lingua, F.; Lepori, L.; Minardi, F.; Penna, V.; Salasnich, L.

2018-04-01

Quantum dynamics of impurities in a bath of bosons is a long-standing problem in solid-state, plasma, and atomic physics. Recent experimental and theoretical investigations with ultracold atoms have focused on this problem, studying atomic impurities immersed in an atomic Bose–Einstein condensate (BEC) and for various relative coupling strengths tuned by the Fano‑Feshbach resonance technique. Here, we report extensive numerical simulations on a closely related problem: the collision between a bosonic impurity consisting of a few 41K atoms and a BEC of 87Rb atoms in a quasi one-dimensional configuration and under a weak harmonic axial confinement. For small values of the inter-species interaction strength (regardless of its sign), we find that the impurity, which starts from outside the BEC, simply causes the BEC cloud to oscillate back and forth, but the frequency of oscillation depends on the interaction strength. For intermediate couplings, after a few cycles of oscillation the impurity is captured by the BEC, and strongly changes its amplitude of oscillation. In the strong interaction regime, if the inter-species interaction is attractive, a local maximum (bright soliton) in the BEC density occurs where the impurity is trapped; if, instead, the inter-species interaction is repulsive, the impurity is not able to enter the BEC cloud and the reflection coefficient is close to one. However, if the initial displacement of the impurity is increased, the impurity is able to penetrate the cloud, leading to the appearance of a moving hole (dark soliton) in the BEC.

Microscopic mechanism of identical multi-quasiparticle bands

International Nuclear Information System (INIS)

Lei Yian; Zhao Enguang; Zeng Jinyan

1997-01-01

Identical one-quasiparticle and two-quasiparticle bands in neighboring odd-and even-mass nuclei are recognized; The intrinsic structure of identical bands is demonstrated by using the particle-number-conserving (PNC) treatment. The occurrence of almost identical moments of inertia is the result of competition among the shell effect (including shape variation), pairing (anti-alignment) effect and blocking (anti-pairing) effect. The observed moments of inertia of identical multi-quasiparticle bands are reproduced quite well by the PNC calculation

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Science.gov (United States)

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

Measurement of the band gap by reflection electron energy loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Vos, Maarten, E-mail: maarten.vos@anu.edu.au [Electronic Materials Engineering Department, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States); French, Benjamin L. [Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248 (United States)

2016-10-15

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Measurement of the band gap by reflection electron energy loss spectroscopy

International Nuclear Information System (INIS)

Vos, Maarten; King, Sean W.; French, Benjamin L.

2016-01-01

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Determination of Impurities of Atrazine by HPLP-MS

Energy Technology Data Exchange (ETDEWEB)

Canping, Pan [Department of Applied Chemistry, China Agricultural University Beijing (China)

2009-07-15

The determination of the main impurities of the herbicide atrazine by GC/FID, GC/MS and LC/MS is described. The most relevant technical impurities were synthesized and characterized by IR and UV spectroscopy as well. The impurity profiles of different technical grade formulated products were tested and the typical impurities identified. (author)

Influence of iron impurities on defected graphene

Energy Technology Data Exchange (ETDEWEB)

Faccio, Ricardo; Pardo, Helena [Centro NanoMat, Cryssmat-Lab, DETEMA, Polo Tecnológico de Pando, Facultad de Química, Universidad de la República, Cno. Saravia s/n, CP 91000 Pando (Uruguay); Centro Interdisciplinario en Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República, Montevideo (Uruguay); Araújo-Moreira, Fernando M. [Materials and Devices Group, Department of Physics, Universidade Federal de São Carlos, SP 13565-905 (Brazil); Mombrú, Alvaro W., E-mail: amombru@fq.edu.uy [Centro NanoMat, Cryssmat-Lab, DETEMA, Polo Tecnológico de Pando, Facultad de Química, Universidad de la República, Cno. Saravia s/n, CP 91000 Pando (Uruguay); Centro Interdisciplinario en Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República, Montevideo (Uruguay)

2015-03-01

Highlights: • The interaction among a multivacancy graphene system and iron impurities is studied. • The studied iron impurities were single atom and tetrahedral and octahedral clusters. • DFT calculations using the VASP code were performed. • The embedding of Fe affects the structure and electronic behavior in the graphene. • Half metal or semimetal behavior can be obtained, depending on the Fe impurities. - Abstract: The aim of this work is to study the interaction of selected iron cluster impurities and a multivacancy graphene system, in terms of the structural distortion that the impurities cause as well as their magnetic response. While originally, the interaction has been limited to vacancies and isolated metallic atoms, in this case, we consider small iron clusters. This study was undertaken using Density Functional Theory (DFT) calculations. The influence of the iron impurities in the electronic structure of the vacant graphene system is discussed. The main conclusion of this work is that the presence of iron impurities acts lowering the magnetic signal due to the occurrence of spin pairing between carbon and iron, instead of enhancing the possible intrinsic carbon magnetism.

Influence of iron impurities on defected graphene

International Nuclear Information System (INIS)

Faccio, Ricardo; Pardo, Helena; Araújo-Moreira, Fernando M.; Mombrú, Alvaro W.

2015-01-01

Highlights: • The interaction among a multivacancy graphene system and iron impurities is studied. • The studied iron impurities were single atom and tetrahedral and octahedral clusters. • DFT calculations using the VASP code were performed. • The embedding of Fe affects the structure and electronic behavior in the graphene. • Half metal or semimetal behavior can be obtained, depending on the Fe impurities. - Abstract: The aim of this work is to study the interaction of selected iron cluster impurities and a multivacancy graphene system, in terms of the structural distortion that the impurities cause as well as their magnetic response. While originally, the interaction has been limited to vacancies and isolated metallic atoms, in this case, we consider small iron clusters. This study was undertaken using Density Functional Theory (DFT) calculations. The influence of the iron impurities in the electronic structure of the vacant graphene system is discussed. The main conclusion of this work is that the presence of iron impurities acts lowering the magnetic signal due to the occurrence of spin pairing between carbon and iron, instead of enhancing the possible intrinsic carbon magnetism

Impurity bubbles in a BEC

Science.gov (United States)

Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

2013-05-01

Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

Impurity bound states in mesoscopic topological superconducting loops

Science.gov (United States)

Jin, Yan-Yan; Zha, Guo-Qiao; Zhou, Shi-Ping

2018-06-01

We study numerically the effect induced by magnetic impurities in topological s-wave superconducting loops with spin-orbit interaction based on spin-generalized Bogoliubov-de Gennes equations. In the case of a single magnetic impurity, it is found that the midgap bound states can cross the Fermi level at an appropriate impurity strength and the circulating spin current jumps at the crossing point. The evolution of the zero-energy mode can be effectively tuned by the located site of a single magnetic impurity. For the effect of many magnetic impurities, two independent midway or edge impurities cannot lead to the overlap of zero modes. The multiple zero-energy modes can be effectively realized by embedding a single Josephson junction with impurity scattering into the system, and the spin current displays oscillatory feature with increasing the layer thickness.

Hydrogenic impurity in double quantum dots

International Nuclear Information System (INIS)

Wang, X.F.

2007-01-01

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

Models for impurity effects in tokamaks

International Nuclear Information System (INIS)

Hogan, J.T.

1980-03-01

Models for impurity effects in tokamaks are described with an emphasis on the relationship between attainment of high β and impurity problems. We briefly describe the status of attempts to employ neutral beam heating to achieve high β in tokamaks and propose a qualitative model for the mechanism by which heavy metal impurities may be produced in the startup phase of the discharge. We then describe paradoxes in impurity diffusion theory and discuss possible resolutions in terms of the effects of large-scale islands and sawtooth oscillations. Finally, we examine the prospects for the Zakharov-Shafranov catastrophe (long time scale disintegration of FCT equilibria) in the context of present and near-term experimental capability

Optical study of the band structure of wurtzite GaP nanowires

OpenAIRE

Assali, S.; Greil, J.; Zardo, I.; Belabbes, A.; de Moor, M.W.A.; Kölling, S.; Koenraad, P.M.; Bechstedt, F.; Bakkers, E.P.A.M.; Haverkort, J.E.M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp...

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

The role of electronic dopant on full band in-plane RKKY coupling in armchair graphene nanoribbons-magnetic impurity system

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen

2018-05-01

Motivated by the growing interest in solving the obstacles of spintronics applications, we study the Ruderman-Kittel-Kasuya-Yosida (RKKY) effective pairwise interaction between magnetic impurities interacting through the π -electrons embedded in both electronically doped-semiconducting and metallic armchair graphene nanoribbons. In terms of the Green's function formalism, treated in a tight-binding approximation with hopping beyond Dirac cone approximation, the RKKY coupling is an attraction or a repulsion depending on the magnetic impurities distances. Our results show that the RKKY coupling in semiconducting nanoribbons is much more affected by doping than metallic ones. Furthermore, we found that the RKKY coupling increases with ribbon width, while there exist some critical electronic concentrations in RKKY interaction oscillations. On the other hand, we find an unusual incoming wave-vector direction for electrons which describes more clearly the ferro- and antiferromagnetic spin configurations in such system. Also, the RKKY coupling at low and high-temperature regions has been addressed for both ferro- and antiferromagnetic spin arrangements.

Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

International Nuclear Information System (INIS)

Dorenbos, Pieter

2013-01-01

Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

Device for removing impurities from liquid metals

International Nuclear Information System (INIS)

Naito, Kesahiro; Yokota, Norikatsu; Shimoyashiki, Shigehiro; Takahashi, Kazuo; Ishida, Tomio.

1984-01-01

Purpose: To attain highly reliable and efficient impurity removal by forming temperature distribution the impurity removing device thereby providing the function of corrosion product trap, nuclear fission product trap and cold trap under the conditions suitable to the impurity removing materials. Constitution: The impurity removing device comprises a container containing impurity removing fillers. The fillers comprise material for removing corrosion products, material for removing nuclear fission products and material for removing depositions from liquid sodium. The positions for the respective materials are determined such that the materials are placed under the temperature conditions easy to attain their function depending on the temperature distribution formed in the removing device, whereby appropriate temperature condition is set to each of the materials. (Yoshino, Y.)

Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires

International Nuclear Information System (INIS)

Tangarife, E.; Duque, C.A.

2011-01-01

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires. -- Research highlights: → Binding energy for donor impurity in coupled wires strongly depends on the confinement potential. → Polarizability for donor impurity in coupled wires strongly depends on the confinement potential. → Binding energy strongly depends on the direction of the applied electric field. → Polarizability strongly depends on the direction of the applied electric field. → The coupling between the two parallel wires increases with the hydrostatic pressure.

Magnetic states of single impurity in disordered environment

Directory of Open Access Journals (Sweden)

G.W. Ponedilok

2013-01-01

Full Text Available The charged and magnetic states of isolated impurities dissolved in amorphous metallic alloy are investigated. The Hamiltonian of the system under study is the generalization of Anderson impurity model. Namely, the processes of elastic and non-elastic scattering of conductive electrons on the ions of a metal and on a charged impurity are included. The configuration averaged one-particle Green's functions are obtained within Hartree-Fock approximation. A system of self-consistent equations is given for calculation of an electronic spectrum, the charged and the spin-polarized impurity states. Qualitative analysis of the effect of the metallic host structural disorder on the observed values is performed. Additional shift and broadening of virtual impurity level is caused by a structural disorder of impurity environment.

Mobile impurities in ferromagnetic liquids

Science.gov (United States)

Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

2011-03-01

Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

Impurity effects on ionic-liquid-based supercapacitors

International Nuclear Information System (INIS)

Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

2016-01-01

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. As a result, by comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

Impurity effects on ionic-liquid-based supercapacitors

Science.gov (United States)

Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

2017-02-01

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. By comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

A theory for the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in dilute magnetic alloys

International Nuclear Information System (INIS)

Satter, M.A.

1990-08-01

In this paper, a formalism for studying the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in a dilute noble metal- transition metal magnetic alloy has been developed from relativistic scattering theory. The theoretical development and the computational techniques of this formalism are based on relativistic spin-polarized scattering theory and relativistic band structure frameworks. For studying the magnetic anisotropic effect a convenient ''working'' frame of reference with its axes oriented along the fcc crystal axes is set up. This formalism is applied to study the situation for two Fe impurities in paramagnetic Au hosts. For AuFe dilute alloy, the two impurity site interaction as a function of separation is not oscillatory and the anisotropic effect is found to be less than the two site interaction itself only by an order of magnitude. Apart from the anisotropic coupling of the two impurity spins to the separation vector, for the first time, another weak anisotropic coupling to the crystal axes is also contained in the two site interaction. These anisotropic effects are the results of the relativistic spin-orbit interaction which are incorporated into the formalism. (author). 22 refs, 5 figs

Effects of gas phase impurities on the topochemical-kinetic behaviour of uranium hydride development

International Nuclear Information System (INIS)

Bloch, J.; Brami, D.; Kremner, A.; Mintz, M.H.; Ben-Gurion Univ. of the Negev, Beersheba

1988-01-01

The hydriding kinetics of bulk uranium and U-0.1 wt.% Cr, in the presence of oxidizing gaseous impurities (oxygen and CO), were studied by combined rate measurements and metallographic examinations of partially reacted samples. The effect of the gaseous impurity (type and concentration) was examined metallographically, and the kinetic data were discussed in relation to these examinations. Below about 100 0 C the reaction of uranium with pure hydrogen consists of the following sequence of steps: (i) Surface nucleation; (ii) homogeneous growth (pitting); (iii) relatively fast lateral growth leading to the formation of a reaction front which penetrates into the sample at a constant rate. The effects of oxygen and CO on the hydriding kinetics were related to their abilities to block hydrogen penetration into the uranium. Thus, it was found that oxygen affects only the penetration through the oxide layer, whereas CO affects the penetration through both the oxide and hydride layers. (orig.)

EUV impurity study of the Alcator tokamak

International Nuclear Information System (INIS)

Terry, J.L.; Chen, K.I.; Moos, H.W.; Marmar, E.S.

1978-01-01

The intensity of resonance line radiation from oxygen, nitrogen, carbon and molybdenum impurities has been measured in the high-field (80kG), high-density (6x10 14 cm -3 ) discharges of the Alcator Tokamak, using a 0.4-m normal-incidence monochromator (300-1300A) with its line of sight fixed along a major radius. Total light-impurity concentrations of a few tenths of a percent have been estimated by using both a simple model and a computer code which included Pfirsch-Schlueter impurity diffusion. The resulting values of Zsub(eff), including the contributions due to both the light impurities and molybdenum, were close to one. The power lost through the impurity line radiation from the lower ionization states accounted for approximately 10% of the total Ohmic input power at high densities. (author)

Interactions of impurities with a moving grain boundary

Energy Technology Data Exchange (ETDEWEB)

Bauer, C L [Carnegie-Mellon Univ., Pittsburgh, Pa. (USA)

1975-01-01

Most theories developed to explain interaction of impurities with a moving grain boundary involve a uniform excess impurity concentration distributed along a planar grain boundary. As boundary velocity increases, the excess impurities exert a net drag force on the boundary until a level is reached whereat the drag force no longer can balance the driving force and breakaway of the boundary from these impurities occurs. In this investigation, assumptions of a uniform lateral impurity profile and a planar grain boundary shape are relaxed by allowing both forward and lateral diffusion of impurities in the vicinity of a grain boundary. It is found that the two usual regions (drag of impurities by, and breakaway of a planar grain boundary) are separated by an extensive region wherein a uniform lateral impurity profile and a planar grain boundary shape are unstable. It is suspected that, in this unstable region, grain boundaries assume a spectrum of more complex morphologies and that elucidation of these morphologies can provide the first definitive description of the breakaway process and insight to more complex phenomena such as solid-solution strengthening, grain growth and secondary recrystallization.

Lattice dynamics of impurity clusters : application to pairs

International Nuclear Information System (INIS)

Chandralekha Devi, N.; Behera, S.N.

1979-01-01

A general solution is obtained for the lattice dynamics of a cluster of n-impurity atoms using the double-time Green's function formalism. The cluster is characterized by n-mass defect and m-force constant change parameters. It is shown that this general solution for the Green's function for the n-impurity cluster can also be expressed in terms of the Green's function for the (n-1)-impurity cluster. As an application, the cluster impurity modes for a pair are calculated using the Debye model for the host lattice dynamics. The splitting of the high frequency local modes and nearly zero frequency resonant modes due to pairs show an oscillatory behaviour on varying the distance of separation between the two impurity atoms. These oscillations are most prominent for two similar impurities and get damped for two dissimilar impurities or if one of the impurities produces a force constant change. The predictions of the calculation provide qualitative explanation of the data obtained from the infrared measurements of the resonant modes in mixed crystal system of KBrsub(1-c)Clsub(c):Lisup(+) and KBrsub(1-c)Isub(c):Lisup(+). (author)

Impurity transport in the Wendelstein VII-A stellarator

International Nuclear Information System (INIS)

1985-01-01

Impurity radiation losses in net-current-free neutral-beam-heated plasmas in the Wendelstein W VII-A stellarator are the combined effect of particularly strong impurity sources and improved particle confinement as compared with ohmically heated tokamak-like plasma discharges. Experiments are described and conclusions are drawn about the impurity species, their origin and their transport behaviour. The impurity transport is modelled by a 1-D impurity transport and radiation code. The evolution of the total radiation in time and space deduced from soft-X-ray and bolometer measurements can be fairly well simulated by the code. Experimentally, oxygen was found to make the main contribution to the radiation losses. In the calculations, an influx of cold oxygen desorbed from the walls of the order of 10 13 -10 14 cm -2 .s -1 and a rate of fast injected oxygen corresponding to a 1% impurity content of the neutral beams in combination with neoclassical impurity transport leads to quantitative agreement between the simulation and the observed radiation. The transport of A1 trace impurities injected by the laser blow-off technique was experimentally studied by soft-X-ray measurements using a differential method allowing extraction of the time evolution of A1 XII, XIII radial profiles. These are compared with code predictions, together with additional spectroscopic measurements. The main features of the impurity transport are consistent with neoclassical predictions, which explain particularly the central impurity accumulation. Some details, however, seem to require additional 'anomalous' transport. Such an enhancement is correlated with distortions of the magnetic configuration around resonant magnetic surfaces. (author)

Uranium analysis. Impurities determination by spark mass spectrometry

International Nuclear Information System (INIS)

Anon.

Determination of impurities in uranium, suitable for atomic content greater than 10 -8 , particularly adapted for a low content. The method is quantitative for metallic impurities and qualitative for non metallic impurities [fr

Fluid and gyrokinetic simulations of impurity transport at JET

DEFF Research Database (Denmark)

Nordman, H; Skyman, A; Strand, P

2011-01-01

Impurity transport coefficients due to ion-temperature-gradient (ITG) mode and trapped-electron mode turbulence are calculated using profile data from dedicated impurity injection experiments at JET. Results obtained with a multi-fluid model are compared with quasi-linear and nonlinear gyrokinetic...... simulation results obtained with the code GENE. The sign of the impurity convective velocity (pinch) and its various contributions are discussed. The dependence of the impurity transport coefficients and impurity peaking factor −∇nZ/nZ on plasma parameters such as impurity charge number Z, ion logarithmic...

Effect of impurities on the steady component of the current in a quantum wire under the joint action of ac and dc fields

International Nuclear Information System (INIS)

Zav'yalov, D. V.; Kryuchkov, S. V.

2008-01-01

The current flowing along a cylindrical quantum wire with a superlattice in the case of the simultaneous application of dc and ac fields is calculated. It is assumed that the wire contains impurity centers, whose ionization results in the generation of nonequilibrium carriers in the conduction band. It is found that the dependence of the steady component of the current on the ac-field frequency is a step-like function. It is shown that the distance between steps depends on the conduction miniband width and the transverse quantum confinement parameters and is independent of the impurity-level depth.

Effects of Nb impurity on orthorhombic PbZrO3 crystals

International Nuclear Information System (INIS)

Rivera, Richard; Stashans, Arvids

2008-01-01

A study of Nb doping in lead zirconate (PbZrO 3 ) has been carried out by using a quantum-chemical method developed for crystals and a periodic supercell model. One of the Zr atoms was replaced by an Nb atom in the supercell consisting of 80 atoms. The obtained geometry optimization for the defective region points to defect-outward atomic movements, which are accompanied by some reduction of atomic charges. It is observed that an extra electron imposed by the Nb impurity is transferred to the conduction band of the material and contributes to the n-type electrical conductivity, explaining indirectly some of the experimental observations.

Method for detecting trace impurities in gases

Science.gov (United States)

Freund, S.M.; Maier, W.B. II; Holland, R.F.; Beattie, W.H.

A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (approx. 2 ppM) present in commercial Xe and ppM levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

Process and system for removing impurities from a gas

Science.gov (United States)

Henningsen, Gunnar; Knowlton, Teddy Merrill; Findlay, John George; Schlather, Jerry Neal; Turk, Brian S

2014-04-15

A fluidized reactor system for removing impurities from a gas and an associated process are provided. The system includes a fluidized absorber for contacting a feed gas with a sorbent stream to reduce the impurity content of the feed gas; a fluidized solids regenerator for contacting an impurity loaded sorbent stream with a regeneration gas to reduce the impurity content of the sorbent stream; a first non-mechanical gas seal forming solids transfer device adapted to receive an impurity loaded sorbent stream from the absorber and transport the impurity loaded sorbent stream to the regenerator at a controllable flow rate in response to an aeration gas; and a second non-mechanical gas seal forming solids transfer device adapted to receive a sorbent stream of reduced impurity content from the regenerator and transfer the sorbent stream of reduced impurity content to the absorber without changing the flow rate of the sorbent stream.

Impurity control in TFTR

International Nuclear Information System (INIS)

Cecchi, J.L.

1980-06-01

The control of impurities in TFTR will be a particularly difficult problem due to the large energy and particle fluxes expected in the device. As part of the TFTR Flexibility Modification (TEM) project, a program has been implemented to address this problem. Transport code simulations are used to infer an impurity limit criterion as a function of the impurity atomic number. The configurational designs of the limiters and associated protective plates are discussed along with the consideration of thermal and mechanical loads due to normal plasma operation, neutral beams, and plasma disruptions. A summary is given of the materials-related research, which has been a collaborative effort involving groups at Argonne National Laboratory, Sandia Laboratories, and Princeton Plasma Physics Laboratory. Conceptual designs are shown for getterng systems capable of regenerating absorbed tritium. Research on this topic by groups at the previously mentioned laboratories and SAES Research Laboratory is reviewed

Effect of iodine impurity on relaxation of photoexcited silver chloride

International Nuclear Information System (INIS)

Vostrikova, Yu. V.; Klyuev, V. G.

2008-01-01

The time and temperature dependences of relaxation of excited AgCl and AgCl:I crystals is studied by the method of photostimulated flash of luminescence. The presence of iodine impurity in silver chloride gives rise to hole recombination (luminescence) centers and hole traps in the band gap. It is shown that the main contribution to the decrease in the concentration of electrons localized at deep traps is made by the recombination of electrons with holes released thermally from shallow localization levels (iodine-related centers). Estimation of activation energy for the relaxation process showed that these energies for the AgCl and AgCl:I samples under study are the same within the experimental error and are equal to E rel1 = 0.01 ± 0.0005 eV for the initial stage of relaxation and E rel2 = 0.09 ± 0.005 eV for the final state. This fact indicates that the majority of hole traps involved in the relaxation process in AgCl are related to iodine impurity. In the course of thermal relaxation in AgCl, relocalization of nonequilibrium charge carriers from shallow levels to deep levels is observed. The depth of the corresponding trap is E arl = 0.174 ± 0.03 eV.

Local chemistry of Al and P impurities in silica

DEFF Research Database (Denmark)

Lægsgaard, Jesper; Stokbro, Kurt

2000-01-01

The local structure around Al and P impurities in silica is investigated using density-functional theory. Two distinct cases are considered: impurities substituting for a Si atom in alpha quartz, and impurities implanted in a stoichiometric alpha-quartz crystal. Both impurity elements are found t...

Impurity transport in internal transport barrier discharges on JET

International Nuclear Information System (INIS)

Dux, R.; Giroud, C.; Zastrow, K.-D.

2004-01-01

Impurity behaviour in JET internal transport barrier (ITB) discharges with reversed shear has been investigated. Metallic impurities accumulate in cases with too strong peaking of the main ion density profile. The accumulation is due to inwardly directed drift velocities inside the ITB radius. The strength of the impurity peaking increases with the impurity charge and is low for the low-Z elements C and Ne. Transport calculations show that the observed behaviour is consistent with dominant neoclassical impurity transport inside the ITB. In some cases, MHD events in the core flatten the radial profile of the metallic impurity. (author)

Spectroscopy of isoelectronic nitrogen impurity in epitaxial structures based on wide-region solid solutions in the system In-Ga-P-As

International Nuclear Information System (INIS)

Ermakov, O.N.

1983-01-01

Luminescence and photocurrent spectra of nitrogen-doped epitaxial structures of indirect gap alloys in In-Ga-P-As system have been studied in the wide temperature and excitation level range. The local disorder in the isoelectronic centre nearest environment is supposed to influence essentially the N-bound optjcal transitions, thus leading to the observed phonon structure smearing and broad band formation, characteristic of optical transitions with strong electron-phonon coupling. With account for light absorption in the p-region, disorder-induced N-band broadening and ''band structure effect'' relation has been obtained, allowing the nitrogen concentration determination from the intrinsic and impurity-related peak intensities ratio in photocurrent spectra of p-n structures

Achieving improved ohmic confinement via impurity injection

International Nuclear Information System (INIS)

Bessenrodt-Weberpals, M.; Soeldner, F.X.

1991-01-01

Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

A UWB Band-Pass Antenna with Triple-Notched Band Using Common Direction Rectangular Complementary Split-Ring Resonators

Directory of Open Access Journals (Sweden)

Bo Yan

2013-01-01

Full Text Available A novel ultrawideband (UWB antenna which has a triple-band notch function is presented. The proposed antenna can block interfering signals from C-band satellite communication systems, IEEE802.11a, and HIPERLAN/2 WLAN systems for example. The antenna is excited by using novel common direction rectangular complementary split-ring resonators (CSRR fabricated on radiating patch of the dielectric substrate with coplanar waveguide (CPW feed strip line. The voltage standing wave ratio (VSWR of the proposed antenna is less than 2.0 in the frequency band from 2.8 to 12 GHz, while showing a very sharp band-rejection performance at 3.9 GHz, 5.2 GHz, and 5.9 GHz. The measurement results show that the proposed antenna provides good omnidirectional field pattern over its whole frequency band excluding the rejected band, which is suitable for UWB applications.

Influence of impurities on the crystallization of dextrose monohydrate

Science.gov (United States)

Markande, Abhay; Nezzal, Amale; Fitzpatrick, John; Aerts, Luc; Redl, Andreas

2012-08-01

The effects of impurities on dextrose monohydrate crystallization were investigated. Crystal nucleation and growth kinetics in the presence of impurities were studied using an in-line focused beam reflectance monitoring (FBRM) technique and an in-line process refractometer. Experimental data were obtained from runs carried out at different impurity levels between 4 and 11 wt% in the high dextrose equivalent (DE) syrup. It was found that impurities have no significant influence on the solubility of dextrose in water. However, impurities have a clear influence on the nucleation and growth kinetics of dextrose monohydrate crystallization. Nucleation and growth rate were favored by low levels of impurities in the syrup.

Striped morphologies induced by magnetic impurities in d-wave superconductors

International Nuclear Information System (INIS)

Zuo Xianjun

2011-01-01

Research Highlights: → We investigate striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs). → For the single-impurity and two-impurity cases, modulated checkerboard pattern and stripe-like structures are induced. → When more magnetic impurities are inserted, more complex modulated structures could be induced, including rectilinear and right-angled stripes and quantum-corral-like structures. → Impurities could induce complex striped morphologies in DSCs. - Abstract: We study striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping by self-consistently solving the Bogoliubov-de Gennes equations based on the t - t' - U - V model. For the single-impurity case, it is found that the stable ground state is a modulated checkerboard pattern. For the two-impurity case, the stripe-like structures in order parameters are induced due to the impurity-pinning effect. The modulations of DSC and charge orders share the same period of four lattice constants (4a), which is half the period of modulations in the coexisting spin order. Interestingly, when three or more impurities are inserted, the impurities could induce more complex striped morphologies due to quantum interference. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

Science.gov (United States)

Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

2013-11-01

Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.

Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

International Nuclear Information System (INIS)

Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

2013-01-01

Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase

Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

Energy Technology Data Exchange (ETDEWEB)

Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)

2013-11-15

Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.

Excited-states of hydrogenic-like impurities in InGaN–GaN spherical QD: Electric field effect

Energy Technology Data Exchange (ETDEWEB)

El Ghazi, Haddou, E-mail: hadghazi@gmail.com [LPS, Faculty of Sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez (Morocco); Special Mathematics, CPGE Kénitra (Morocco); Jorio, Anouar [LPS, Faculty of Sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez (Morocco)

2013-12-01

By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N–GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown.

Excited-states of hydrogenic-like impurities in InGaN–GaN spherical QD: Electric field effect

International Nuclear Information System (INIS)

El Ghazi, Haddou; Jorio, Anouar

2013-01-01

By means of a traditional Ritz variational method within the effective-mass and single parabolic band approximations, the excited-states energy with and without the existence of the impurity is performed. Externally applied electric field and system radius effects are considered in wurtzite (In,Ga)N–GaN spherical quantum dot with finite potential barrier. The normalized binding energy is also reported. Compared to the previous theoretical findings, a good agreement is shown

Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

International Nuclear Information System (INIS)

Red'ko, R.A.; Budzulyak, S.I.; Vakhnyak, N.D.; Demchina, L.A.; Korbutyak, D.V.; Konakova, R.V.; Lotsko, A.P.; Okhrimenko, O.B.; Berezovskaya, N.I.; Bykov, Yu.V.; Egorov, S.V.; Eremeev, A.G.

2016-01-01

Effect of microwave radiation (24 GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5 eV was studied using the low-temperature (T=2 K) photoluminescence (PL) technique. The shapes of donor–acceptor pairs (DAP) and Y PL bands were studied in detail. The Huang–Rhys factor was calculated for the DAP luminescence depending on microwave radiation treatment. The increase of the distance between the DAP components responsible for emission at 1.455 eV and the quenching of Y-band due to microwave irradiation were observed. The method to decrease the amount of extended defects in near-surface layers of CdTe:Cl single crystals has been proposed.

Impurity screening of scrape-off plasma in a tokamak

International Nuclear Information System (INIS)

Kishimoto, Hiroshi; Tani, Keiji; Nakamura, Hiroo

1981-11-01

Impurity screening effect of a scrape-off layer has been studied in a tokamak, based on a simple model of wall-released impurity behavior. Wall-sputtered impurities are stopped effectively by the scrape-off plasma for a medium-Z or high-Z wall system while major part of impurities enters the main plasma in a low-Z wall system. The screening becomes inefficient with increase of scrape-off plasma temperature. Successive multiplication of recycling impurities in the scrape-off layer is large for a high-Z wall and is enhanced by a rise of scrape-off plasma temperature. The stability of plasma-wall interaction is determined by a multiplication factor of recycling impurities. (author)

Observation of impurity accumulation and concurrent impurity influx in PBX

International Nuclear Information System (INIS)

Sesnic, S.S.; Fonck, R.J.; Ida, K.; Couture, P.; Kaita, R.; Kaye, S.; Kugel, H.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Powell, E.T.; Reusch, M.; Takahashi, H.; Gammel, G.; Morris, W.

1987-01-01

Impurity studies in L- and H-mode discharges in PBX have shown that both types of discharges can evolve into either an impurity accumulative or nonaccumulative case. In a typical accumulative discharge, Z eff peaks in the center to values of about 5. The central metallic densities can be high, n met /n e ≅ 0.01, resulting in central radiated power densities in excess of 1 W/cm 3 , consistent with bolometric estimates. The radial profiles of metals obtained independently from the line radiation in the soft X-ray and the VUV regions are very peaked. Concurrent with the peaking, an increase in the impurity influx coming from the edge of the plasma is observed. At the beginning of the accumulation phase the inward particle flux for titanium has values of 6x10 10 and 10x10 10 particles/cm 2 s at minor radii of 6 and 17 cm. At the end of the accumulation phase, this particle flux is strongly increased to values of 3x10 12 and 1x10 12 particles/cm 2 s. This increased flux is mainly due to influx from the edge of the plasma and to a lesser extent due to increased convective transport. Using the measured particle flux, an estimate of the diffusion coefficient D and the convective velocity v is obtained. (orig.)

Impurity induced resistivity upturns in underdoped cuprates

Energy Technology Data Exchange (ETDEWEB)

Das, Nabyendu, E-mail: nabyendudas@gmail.com; Singh, Navinder

2016-01-28

Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

Impurity induced resistivity upturns in underdoped cuprates

International Nuclear Information System (INIS)

Das, Nabyendu; Singh, Navinder

2016-01-01

Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

Low Z impurity transport in tokamaks. [Neoclassical transport theory

Energy Technology Data Exchange (ETDEWEB)

Hawryluk, R.J.; Suckewer, S.; Hirshman, S.P.

1978-10-01

Low Z impurity transport in tokamaks was simulated with a one-dimensional impurity transport model including both neoclassical and anomalous transport. The neoclassical fluxes are due to collisions between the background plasma and impurity ions as well as collisions between the various ionization states. The evaluation of the neoclassical fluxes takes into account the different collisionality regimes of the background plasma and the impurity ions. A limiter scrapeoff model is used to define the boundary conditions for the impurity ions in the plasma periphery. In order to account for the spectroscopic measurements of power radiated by the lower ionization states, fluxes due to anomalous transport are included. The sensitivity of the results to uncertainties in rate coefficients and plasma parameters in the periphery are investigated. The implications of the transport model for spectroscopic evaluation of impurity concentrations, impurity fluxes, and radiated power from line emission measurements are discussed.

First Results of the Sideband-Separating Mixer for ALMA Band 9 Upgrade

NARCIS (Netherlands)

Khudchenko, Andrey; Hesper, Ronald; Baryshev, Andrey; Mena, F. Patricio; Gerlofma, Gerrit; Zijlstra, Tony; Klapwijk, Teun M.; Kooi, Jacob W.; Spaans, Marco

2011-01-01

Last year, the design and implementation details of a new modular sideband-separating mixer block, intended as an upgrade for the current single-ended ALMA Band 9 mixers, were presented at this conference. In high-frequency observation bands like ALMA Band 9 (600-720 GHz), which is strongly

Band bending at the surface of Bi2Se3 studied from first principles

International Nuclear Information System (INIS)

Rakyta, P; Szunyogh, L; Ujfalussy, B

2015-01-01

The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close to the surface and by the inhomogeneous charge distribution of the occupied surface states (SSs). Our self-consistent calculations in the Korringa–Kohn–Rostoker framework showed that in contrast to the bulk bands, the spectrum of the SSs is not bent at the surface. In turn, it is possible to tune the energy level of the Dirac point via the deposited surface dopants. In addition, the electrostatic modifications induced by the charged impurities on the surface induce long range oscillations in the charge density. For dopants located beneath the surface, however, these oscillations become highly suppressed. Our findings are in good agreement with recent experiments, however, our results indicate that the concentration of the surface doping cannot be estimated from the energy shift of the Dirac cone within the scope of the effective continuous model for the protected SSs. (paper)

Effects of PEO-PPO diblock impurities on the cubic structure of aqueous PEO-PPO-PEO pluronics micelles: fcc and bcc ordered structures in F127

DEFF Research Database (Denmark)

Mortensen, Kell; Pedersen, Walther Batsberg; Hvidt, S.

2008-01-01

We report on structural properties of PEO-PPO-PEO type of triblock block copolymers (Pluronics F127) with special emphasis on the effect of diblock PEO-PPO impurities on the ordered gel phase. Commercial F127 polymers contain as received roughly 20% PEO-PPO diblock and 80% PEO-PPO-PEO triblock...... copolymers. Aqueous solutions of F127 copolymers used as received form fee ordered micellar structure. Copolymers depleted with respect to the diblock impurity, resulting in a pure PEO-PPO-PEO triblock copolymer system, form bcc ordered micelles within the major parts of the gel phase. However, close...

Effects of Nb impurity on orthorhombic PbZrO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Rivera, Richard; Stashans, Arvids [Grupo de FisicoquImica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)], E-mail: arvids@utpl.edu.ec

2008-10-15

A study of Nb doping in lead zirconate (PbZrO{sub 3}) has been carried out by using a quantum-chemical method developed for crystals and a periodic supercell model. One of the Zr atoms was replaced by an Nb atom in the supercell consisting of 80 atoms. The obtained geometry optimization for the defective region points to defect-outward atomic movements, which are accompanied by some reduction of atomic charges. It is observed that an extra electron imposed by the Nb impurity is transferred to the conduction band of the material and contributes to the n-type electrical conductivity, explaining indirectly some of the experimental observations.

Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

Directory of Open Access Journals (Sweden)

S. Coco

2008-01-01

Full Text Available This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high Q dielectric resonator.

Control Strategy for Small Molecule Impurities in Antibody-Drug Conjugates.

Science.gov (United States)

Gong, Hai H; Ihle, Nathan; Jones, Michael T; Kelly, Kathleen; Kott, Laila; Raglione, Thomas; Whitlock, Scott; Zhang, Qunying; Zheng, Jie

2018-04-01

Antibody-drug conjugates (ADCs) are an emerging class of biopharmaceuticals. As such, there are no specific guidelines addressing impurity limits and qualification requirements. The current ICH guidelines on impurities, Q3A (Impurities in New Drug Substances), Q3B (Impurities in New Drug Products), and Q6B (Specifications: Test Procedures and Acceptance Criteria for Biotechnological/Biological Products) do not adequately address how to assess small molecule impurities in ADCs. The International Consortium for Innovation and Quality in Pharmaceutical Development (IQ) formed an impurities working group (IWG) to discuss this issue. This white paper presents a strategy for evaluating the impact of small molecule impurities in ADCs. This strategy suggests a science-based approach that can be applied to the design of control systems for ADC therapeutics. The key principles that form the basis for this strategy include the significant difference in molecular weights between small molecule impurities and the ADC, the conjugation potential of the small molecule impurities, and the typical dosing concentrations and dosing schedule. The result is that exposure to small impurities in ADCs is so low as to often pose little or no significant safety risk.

Impurity transport in internal transport barrier discharges on JET

International Nuclear Information System (INIS)

Dux, R.

2002-01-01

In JET plasmas with internal transport barrier (ITB) the behaviour of metallic and low-Z impurities (C, Ne) was investigated. In ITB discharges with reversed shear, the metallic impurities accumulate in cases with too strong peaking of the density profile, while the concentration of low-Z elements C and Ne is only mildly peaked. The accumulation might be so strong, that the central radiation approximately equals the central heating power followed by a radiative collapse of the transport barrier. The radial location with strong impurity gradients (convective barrier) was identified to be situated inside (not at!) the heat flux barrier. Calculations of neo-classical transport were performed for these discharges, including impurity-impurity collisions. It was found, that the observed Z-dependence of the impurity peaking and the location of the impurity 'barrier' can be explained with neo-classical transport. ITB discharges with monotonic shear show less inward convection and seem to be advantageous with respect to plasma purity. (author)

Exciter For X-Band Transmitter And Receiver

Science.gov (United States)

Johns, Carl E.

1989-01-01

Report describes developmental X-band exciter for X-band uplink subsystem of Deep Space Network. X-band transmitter-exciting signal expected to have fractional frequency stability of 5.2 X 10 to negative 15th power during 1,000-second integration period. Generates coherent test signals for S- and X-band Block III translator of Deep Space Network, Doppler-reference signal for associated Doppler-extractor system, first-local-oscillator signal for associated receiver, and reference signal for associated ranging subsystem. Tests of prototype exciter show controlling and monitoring and internal phase-correcting loops perform according to applicable design criteria. Measurements of stability of frequency and of single-sideband noise spectral density of transmitter-exciting signal made subsequently.

Band magnetism due to f-electrons

International Nuclear Information System (INIS)

Brodsky, M.B.; Trainor, R.J.

1976-01-01

Specific heat data illustrate several types of itinerant or band magnetism in actinide intermetallic compounds. The results show ferromagnetic spin fluctuations in UAl 2 with T/sub sf/ equals 25K, itinerant antiferromagnetism in NpSn 3 with T/sub N/ equals 9.5K and itinerant ferromagnetism in NpOs 2 with T/sub C/ equals 7.9K. Specific heat studies of dilute U/sub 1-x/Th/sub x/Al 2 show the theoretically predicted modifications due to impurity scattering in a spin fluctuation system. For NpSn 3 it is possible to show the BCS nature of the transition due to the gap formation

Observations of long impurity confinement times in the ISX tokamak

Energy Technology Data Exchange (ETDEWEB)

Burrell, K H; Wong, S K; Muller, III, C H; Hacker, M P [General Atomic Co., San Diego, CA (USA); Ketterer, H E; Isler, R C; Lazarus, E A [Oak Ridge National Lab., TN (USA)

1981-08-01

The transport of small amounts of silicon and aluminium injected into plasmas in the Impurity Study Experiment (ISX) tokamak is studied. By monitoring the time behaviour of ultra-violet spectral lines emitted by various charge states of those impurities and comparing this behaviour to the predictions of a multi-species impurity transport code, it is found that both impurity penetration times and impurity containment times are consistent with neoclassical predictions. The observed impurity containment times, which are greater than three times the energy containment time, are consistent with the inward convection predicted by neoclassical theory.

Numerical studies of impurities in fusion plasmas

International Nuclear Information System (INIS)

Hulse, R.A.

1982-09-01

The coupled partial differential equations used to describe the behavior of impurity ions in magnetically confined controlled fusion plasmas require numerical solution for cases of practical interest. Computer codes developed for impurity modeling at the Princeton Plasma Physics Laboratory are used as examples of the types of codes employed for this purpose. These codes solve for the impurity ionization state densities and associated radiation rates using atomic physics appropriate for these low-density, high-temperature plasmas. The simpler codes solve local equations in zero spatial dimensions while more complex cases require codes which explicitly include transport of the impurity ions simultaneously with the atomic processes of ionization and recombination. Typical applications are discussed and computational results are presented for selected cases of interest

Impurity study of TMX using ultraviolet spectroscopy

International Nuclear Information System (INIS)

Allen, S.L.; Strand, O.T.; Moos, H.W.; Fortner, R.J.; Nash, T.J.; Dietrich, D.D.

1981-01-01

An extreme ultraviolet (EUV) study of the emissions from intrinsic and injected impurities in TMX is presented. Two survey spectrographs were used to determine that the major impurities present were oxygen, nitrogen, carbon, and titanium. Three absolutely-calibrated monochromators were used to measure the time histories and radial profiles of these impurity emissions in the central cell and each plug. Two of these instruments were capable of obtaining radial profiles as a function of time in a single shot

Multiscaling Dynamics of Impurity Transport in Drift-Wave Turbulence

International Nuclear Information System (INIS)

Futatani, S.; Benkadda, S.; Nakamura, Y.; Kondo, K.

2008-01-01

Intermittency effects and the associated multiscaling spectrum of exponents are investigated for impurities advection in tokamak edge plasmas. The two-dimensional Hasagawa-Wakatani model of resistive drift-wave turbulence is used as a paradigm to describe edge tokamak turbulence. Impurities are considered as a passive scalar advected by the plasma turbulent flow. The use of the extended self-similarity technique shows that the structure function relative scaling exponent of impurity density and vorticity follows the She-Leveque model. This confirms the intermittent character of the impurities advection in the turbulent plasma flow and suggests that impurities are advected by vorticity filaments

Development of ultra pure germanium epi layers for blocked impurity band far infrared detectors

International Nuclear Information System (INIS)

Lutz, M.P.

1991-05-01

The main goals of this paper are: (1) To develop a low-pressure CVD (LPCVD) process that allows epitaxial growth at lower temperatures. Lower temperatures will allow the achievement of a sharp dopant profile at the substrate/epi-layer interface. Less out-diffusion from the substrate would allow the use of thinner epitaxial layers, which would lead to a larger depletion width in the photoactive region. LPCVD also avoids, to a great extent, gas-phase nucleation, which would cause Ge particulates to fall onto the wafer surface during growth. (2) To reduce high levels of oxygen and copper present at the wafer interface, as observed by secondary ion mass spectroscopy (SIMS). In order to achieve high-quality epitaxial layers, it is imperative that the substrate surface be of excellent quality. (3) To make and test detectors, after satisfactory epitaxial layers have been made

Zn vacancy-donor impurity complexes in ZnO

Science.gov (United States)

Frodason, Y. K.; Johansen, K. M.; Bjørheim, T. S.; Svensson, B. G.; Alkauskas, A.

2018-03-01

Results from hybrid density functional theory calculations on the thermodynamic stability and optical properties of the Zn vacancy (VZn) complexed with common donor impurities in ZnO are reported. Complexing VZn with donors successively removes its charge-state transition levels in the band gap, starting from the most negative one. Interestingly, the presence of a donor leads only to modest shifts in the positions of the VZn charge-state transition levels, the sign and magnitude of which can be interpreted from a polaron energetics model by taking hole-donor repulsion into account. By employing a one-dimensional configuration coordinate model, luminescence lineshapes and positions were calculated. Due to the aforementioned effects, the isolated VZn gradually changes from a mainly nonradiative defect with transitions in the infrared region in n -type material, to a radiative one with broad emission in the visible range when complexed with shallow donors.

Toroidal asymmetries in divertor impurity influxes in NSTX

Directory of Open Access Journals (Sweden)

F. Scotti

2017-08-01

Full Text Available Toroidal asymmetries in divertor carbon and lithium influxes were observed in NSTX, due to toroidal differences in surface composition, tile leading edges, externally-applied three-dimensional (3D fields and toroidally-localized edge plasma modifications due to radio frequency heating. Understanding toroidal asymmetries in impurity influxes is critical for the evaluation of total impurity sources, often inferred from measurements with a limited toroidal coverage. The toroidally-asymmetric lithium deposition induced asymmetries in divertor lithium influxes. Enhanced impurity influxes at the leading edge of divertor tiles were the main cause of carbon toroidal asymmetries and were enhanced during edge localized modes. Externally-applied 3D fields led to strike point splitting and helical lobes observed in divertor impurity emission, but marginal changes to the toroidally-averaged impurity influxes. Power coupled to the scrape-off layer SOL plasma during radio frequency (RF heating of H-mode discharges enhanced impurity influxes along the non-axisymmetric divertor footprint of flux tubes connecting to plasma in front of the RF antenna.

Effects of correlated hybridization in the single-impurity Anderson model

Science.gov (United States)

Líbero, Valter; Veiga, Rodrigo

2013-03-01

The development of new materials often dependents on the theoretical foundations which study the microscopic matter, i.e., the way atoms interact and create distinct configurations. Among the interesting materials, those with partially filled d or f orbitals immersed in nonmagnetic metals have been described by the Anderson model, which takes into account Coulomb correlation (U) when a local level (energy Ed) is doubled occupied, and an electronic hybridization between local levels and conduction band states. In addition, here we include a correlated hybridization term, which depends on the local-level occupation number involved. This term breaks particle-hole symmetry (even when U + 2Ed = 0), enhances charge fluctuations on local levels and as a consequence strongly modifies the crossover between the Hamiltonian fixed-points, even suppressing one or other. We exemplify these behaviors showing data obtained from the Numerical Renormalization Group (NRG) computation for the impurity temperature-dependent specific heat, entropy and magnetic susceptibility. The interleaving procedure is used to recover the continuum spectrum after the NRG-logarithmic discretization of the conduction band. Fundação de Amparo à Pesquisa do Estado de São Paulo - FAPESP.

Measurement of valence band structure in arbitrary dielectric films

International Nuclear Information System (INIS)

Uhm, Han S.; Choi, Eun H.

2012-01-01

A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

Impurities and conductivity in a D-wave superconductor

International Nuclear Information System (INIS)

Balatsky, A.V.

1994-01-01

Impurity scattering in the unitary limit produces low energy quasiparticles with anisotropic spectrum in a two-dimensional d-wave superconductor. The authors describe a new quasi-one-dimensional limit of the quasiparticle scattering, which might occur in a superconductor with short coherence length and with finite impurity potential range. The dc conductivity in a d-wave superconductor is predicted to be proportional to the normal state scattering rate and is impurity-dependent. They show that quasi-one-dimensional regime might occur in high-T c superconductors with Zn impurities at low temperatures T approx-lt 10 K

Determination of impurities in beryl by neutron activation analysis

International Nuclear Information System (INIS)

Swain, K.K.; Dalvi, Aditi A.; Ajith, Nicy

2015-01-01

Beryl is a chemically complex and highly compositionally variable gem-forming mineral found in a variety of locations worldwide. Pure beryl is colorless, but the presence of impurities imparts colors such as green, blue, yellow, red, and white. It is one of the most important gem minerals and the gems are named by their color. The impurities in beryl can be determined using various analytical techniques. Neutron activation analysis (NAA) is a sensitive technique for multielement analysis of geological samples. Four beryl samples, collected from Nayakund Mehandi Block, Parseoni, Maharashtra, were received from Geological Survey of India (GSI), Pune. Powdered samples (50-100 mg) along with comparators (IAEA Soil-7) were packed in aluminum foils, sealed in an aluminum container and irradiated for 7 days in tray rod facility of Dhruva reactor, BARC, Mumbai. After irradiation, samples were brought to laboratory. Samples were opened, transferred into polyethylene packets and weighed. Gamma activity measurements were carried out using 45% HPGe detector coupled to 8 k multi channel analyzer. For the determination of manganese, which produces relatively shorter lived activation product ( 56 Mn: T 1/2 = 2.56 h), samples were sealed in polyethylene pouches and irradiated in graphite reflector position of Critical facility reactor, BARC, Mumbai. Relative method of NAA was used for concentration calculations. IAEA reference material (RM), SL -1 (lake sediment) was analyzed for quality control. Percentage errors on the measured concentrations of the elements are within ± 8% with respect to the recommended/information values

On impurity handling in high performance stellarator/heliotron plasmas

International Nuclear Information System (INIS)

Burhenn, R.; Feng, Y.; Ida, K.

2008-10-01

The Large Helical Device (LHD) and Wendelstein 7-X (W7-X, under construction) are experiments specially designed to demonstrate long pulse (quasi steady-state) operation, which is an intrinsic property of Stellarators and Heliotrons. Significant progress was made in establishment of high performance plasmas. A crucial point is the increasing impurity confinement towards high density as observed at several machines (TJ-II, W7-AS, LHD) which can lead to impurity accumulation and early pulse termination by radiation collapse at high density. In addition, theoretical predictions for non-axisymmetric configurations prognosticate the absence of impurity screening by ion temperature gradients in standard ion root plasmas. Nevertheless, scenarios were found where impurity accumulation was successfully avoided in LHD and/or W7-AS by the onset of drag forces in the high density and low temperature scrape-off-layer, the generation of magnetic islands at the plasma boundary and to a certain degree also by ELMs, flushing out impurities and reducing the net-impurity influx into the core. Additionally, a reduction of impurity core confinement was observed in the W7-AS High Density H-mode (HDH) regime and by application of sufficient ECRH heating power. The exploration of such purification mechanisms is a demanding task for successful steady-state operation. The impurity transport at the plasma edge/SOL was identified to play a major role for the global impurity behaviour in addition to the core confinement. (author)

Recent trends in the impurity profile of pharmaceuticals

Directory of Open Access Journals (Sweden)

Kavita Pilaniya

2010-01-01

Full Text Available Various regulatory authorities such as the International Conference on Harmonization (ICH, the United States Food and Drug administration (FDA, and the Canadian Drug and Health Agency (CDHA are emphasizing on the purity requirements and the identification of impurities in Active Pharmaceutical Ingredients (APIs. The various sources of impurity in pharmaceutical products are - reagents, heavy metals, ligands, catalysts, other materials like filter aids, charcoal, and the like, degraded end products obtained during \\ after manufacturing of bulk drugs from hydrolysis, photolytic cleavage, oxidative degradation, decarboxylation, enantiomeric impurity, and so on. The different pharmacopoeias such as the British Pharmacopoeia, United State Pharmacopoeia, and Indian Pharmacopoeia are slowly incorporating limits to allowable levels of impurities present in APIs or formulations. Various methods are used to isolate and characterize impurities in pharmaceuticals, such as, capillary electrophoresis, electron paramagnetic resonance, gas-liquid chromatography, gravimetric analysis, high performance liquid chromatography, solid-phase extraction methods, liquid-liquid extraction method, Ultraviolet Spectrometry, infrared spectroscopy, supercritical fluid extraction column chromatography, mass spectrometry, Nuclear magnetic resonance (NMR spectroscopy, and RAMAN spectroscopy. Among all hyphenated techniques, the most exploited techniques for impurity profiling of drugs are Liquid Chromatography (LC-Mass Spectroscopy (MS, LC-NMR, LC-NMR-MS, GC-MS, and LC-MS. This reveals the need and scope of impurity profiling of drugs in pharmaceutical research.

Striped morphologies induced by magnetic impurities in d-wave superconductors

Science.gov (United States)

Zuo, Xian-Jun

2011-05-01

We study striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping by self-consistently solving the Bogoliubov-de Gennes equations based on the t - t‧ - U - V model. For the single-impurity case, it is found that the stable ground state is a modulated checkerboard pattern. For the two-impurity case, the stripe-like structures in order parameters are induced due to the impurity-pinning effect. The modulations of DSC and charge orders share the same period of four lattice constants (4 a), which is half the period of modulations in the coexisting spin order. Interestingly, when three or more impurities are inserted, the impurities could induce more complex striped morphologies due to quantum interference. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

Monte Carlo method for magnetic impurities in metals

Science.gov (United States)

Hirsch, J. E.; Fye, R. M.

1986-01-01

The paper discusses a Monte Carlo algorithm to study properties of dilute magnetic alloys; the method can treat a small number of magnetic impurities interacting wiith the conduction electrons in a metal. Results for the susceptibility of a single Anderson impurity in the symmetric case show the expected universal behavior at low temperatures. Some results for two Anderson impurities are also discussed.

Impurity dependence of superconductivity in niobium

International Nuclear Information System (INIS)

Laa, C.

1984-04-01

Jump temperatures, the critical fields Hsubc and Hsubc 2 and specific heats were measured on niobium samples where the impurity content was systematically varied by loading with nitrogen. Quantities could thus be extrapolated to lattice perfection and absolute purity. Comparisons with theories were made and some parameters extracted. Agreement was found with Gorkov theory for small impurities. A new value of the Ginsburg-Landau parameter Ko was determined to be just above 1/sqrt2 which proves that niobium is an elementary Type II semiconductor. By comparisons with the BCS and the CLAC theory the values of the mean Fermi velocity, the London penetration depth, the BCS coherence length and the impurity parameter were extracted. (G.Q.)

Impurity-induced states in superconducting heterostructures

Science.gov (United States)

Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

2018-04-01

Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

Interpretation of plasma impurity deposition probes. Analytic approximation

Science.gov (United States)

Stangeby, P. C.

1987-10-01

Insertion of a probe into the plasma induces a high speed flow of the hydrogenic plasma to the probe which, by friction, accelerates the impurity ions to velocities approaching the hydrogenic ion acoustic speed, i.e., higher than the impurity ion thermal speed. A simple analytic theory based on this effect provides a relation between impurity fluxes to the probe Γimp and the undisturbed impurity ion density nimp, with the hydrogenic temperature and density as input parameters. Probe size also influences the collection process and large probes are found to attract a higher flux density than small probes in the same plasma. The quantity actually measured, cimp, the impurity atom surface density (m-2) net-deposited on the probe, is related to Γimp and thus to nimp by taking into account the partial removal of deposited material caused by sputtering and the redeposition process.

The screening of charged impurities in bilayer graphene

International Nuclear Information System (INIS)

Zhang Wenjing; Li, Lain-Jong

2010-01-01

Positively charged impurities were introduced into a bilayer graphene (BLG) transistor by n-doping with dimethylformamide. Subsequent exposure of the BLG device to moisture resulted in a positive shift of the Dirac point and an increase of hole mobility, suggesting that moisture could reduce the scattering strength of the existing charged impurities. In other words, moisture screened off the 'effective density' of charged impurities. At the early stage of moisture screening the scattering of hole carriers is dominated by long-range Coulomb scatter, but an alternative scattering mechanism should also be taken into consideration when the effective density of impurities is further lowered on moisture exposure.

Collective impurity effects in the Heisenberg triangular antiferromagnet

International Nuclear Information System (INIS)

Maryasin, V S; Zhitomirsky, M E

2015-01-01

We theoretically investigate the Heisenberg antiferromagnet on a triangular lattice doped with nonmagnetic impurities. Two nontrivial effects resulting from collective impurity behavior are predicted. The first one is related to presence of uncompensated magnetic moments localized near vacancies as revealed by the low-temperature Curie tail in the magnetic susceptibility. These moments exhibit an anomalous growth with the impurity concentration, which we attribute to the clustering mechanism. In an external magnetic field, impurities lead to an even more peculiar phenomenon lifting the classical ground-state degeneracy in favor of the conical state. We analytically demonstrate that vacancies spontaneously generate a positive biquadratic exchange, which is responsible for the above degeneracy lifting

On neoclassical impurity transport in stellarator geometry

International Nuclear Information System (INIS)

García-Regaña, J M; Kleiber, R; Beidler, C D; Turkin, Y; Maaßberg, H; Helander, P

2013-01-01

The impurity dynamics in stellarators has become an issue of moderate concern due to the inherent tendency of the impurities to accumulate in the core when the neoclassical ambipolar radial electric field points radially inwards (ion root regime). This accumulation can lead to collapse of the plasma due to radiative losses, and thus limit high performance plasma discharges in non-axisymmetric devices. A quantitative description of the neoclassical impurity transport is complicated by the breakdown of the assumption of small E × B drift and trapping due to the electrostatic potential variation on a flux surface Φ-tilde compared with those due to the magnetic field gradient. This work examines the impact of this potential variation on neoclassical impurity transport in the Large Helical Device heliotron. It shows that the neoclassical impurity transport can be strongly affected by Φ-tilde . The central numerical tool used is the δf particle in cell Monte Carlo code EUTERPE. The Φ-tilde used in the calculations is provided by the neoclassical code GSRAKE. The possibility of obtaining a more general Φ-tilde self-consistently with EUTERPE is also addressed and a preliminary calculation is presented. (paper)

Simulated impurity transport in LHD from MIST

Energy Technology Data Exchange (ETDEWEB)

Rice, J.E. [National Inst. for Fusion Science, Toki, Gifu (Japan)

1998-05-01

The impurity transport code MIST and atomic physics package LINES are used to calculate the time evolution of charge state density profiles, individual line emissivity profiles and total radiated power profiles for impurities in LHD plasmas. Three model LHD plasmas are considered; a high density, low temperature case, a low density, high temperature case and the initial LHD start-up plasma (500 kW ECH), using impurity transport coefficient profiles from Heliotron E. The elements oxygen, neon, scandium, iron, nickel and molybdenum are considered, both injected and in steady state. (author)

Spin-1 two-impurity Kondo problem on a lattice

Science.gov (United States)

Allerdt, A.; Žitko, R.; Feiguin, A. E.

2018-01-01

We present an extensive study of the two-impurity Kondo problem for spin-1 adatoms on a square lattice using an exact canonical transformation to map the problem onto an effective one-dimensional system that can be numerically solved using the density matrix renormalization group method. We provide a simple intuitive picture and identify the different regimes, depending on the distance between the two impurities, Kondo coupling JK, longitudinal anisotropy D , and transverse anisotropy E . In the isotropic case, two impurities on opposite (the same) sublattices have a singlet (triplet) ground state. However, the energy difference between the triplet ground state and the singlet excited state is very small and we expect an effectively fourfold-degenerate ground state, i.e., two decoupled impurities. For large enough JK the impurities are practically uncorrelated forming two independent underscreened states with the conduction electrons, a clear nonperturbative effect. When the impurities are entangled in an RKKY-like state, Kondo correlations persist and the two effects coexist: the impurities are underscreened, and the dangling spin-1 /2 degrees of freedom are responsible for the interimpurity entanglement. We analyze the effects of magnetic anisotropy in the development of quasiclassical correlations.

Breatherlike impurity modes in discrete nonlinear lattices

DEFF Research Database (Denmark)

Hennig, D.; Rasmussen, Kim; Tsironis, G. P.

1995-01-01

We investigate the properties of a disordered generalized discrete nonlinear Schrodinger equation, containing both diagonal and nondiagonal nonlinear terms. The equation models a Linear host lattice doped with nonlinear impurities. We find different types of impurity states that form itinerant...

Incorporation, diffusion and segregation of impurities in polycrystalline silicon

Energy Technology Data Exchange (ETDEWEB)

Deville, J.P.; Soltani, M.L. (Universite Louis Pasteur, 67 - Strasbourg (France)); Quesada, J. (Laboratoire de Metallurgie-Chimie des Materiaux, E.N.S.A.I.S., 67 - Strasbourg (France))

1982-01-01

We studied by means of X-Ray photoelectron Spectroscopy the nature, distribution and, when possible, the chemical bond of impurities at the surface of polycrystalline silicon samples grown on a carbon ribbon. Besides main impurities (carbon and oxygen), always present at concentrations around their limit of solubility in silicon, metal impurities have been found: their nature varies from one sample to another. Their spatial distribution is not random: some are strictly confined at the surface (sodium), whereas others are in the superficial oxidized layer (calcium, magnesium) or localized at the oxide-bulk silicon interface (iron). Metal impurities are coming from the carbon ribbon and are incorporated to silicon during the growth process. It is not yet possible to give a model of diffusion processes of impurities since they are too numerous and interact one with the other. However oxygen seems to play a leading role in the spatial distribution of metal impurities.

Quantum one dimensional spin systems. Disorder and impurities

International Nuclear Information System (INIS)

Brunel, V.

1999-01-01

This thesis presents three studies that are respectively the spin-1 disordered chain, the non magnetic impurities in the spin-1/2 chain and the reaction-diffusion process. The spin-1 chain of weak disorder is performed by the Abelian bosonization and the renormalization group. This allows to take into account the competition between the disorder and the interactions and predicts the effects of various spin-1 anisotropy chain phases under many different disorders. A second work uses the non magnetic impurities as local probes of the correlations in the spin-1/2 chain. When the impurities are connected to the chain boundary, the author predicts a temperature dependence of the relaxation rate (1/T) of the nuclear spin impurities, different from the case of these impurities connected to the whole chain. The last work deals with one dimensional reaction-diffusion problem. The Jordan-Wigner transformation allows to consider a fermionic field theory that critical exponents follow from the renormalization group. (A.L.B.)

Efficient photocatalytic degradation of perfluorooctanoic acid by a wide band gap p-block metal oxyhydroxide InOOH

Science.gov (United States)

Xu, Jingjing; Wu, Miaomiao; Yang, Jingwen; Wang, Zhengmei; Chen, Mindong; Teng, Fei

2017-09-01

In this work, we prepared a new wide band gap semiconductor, p-block metal oxyhydroxide InOOH, which exhibits efficient activity for perfluorooctanoic acid (PFOA) degradation under mild conditions and UV light irradiation. The apparent rate constant for PFOA degradation by InOOH is 27.6 times higher than that for P25 titania. Results show that ionized PFOA (C7F15COO-) can be adsorbed much more efficiently on the surface of InOOH than P25. Then, the adsorbed C7F15COO- can be decomposed directly by photo-generated holes to form C7F15COOrad radicals. This process is the key step for the photocalytic degradation of PFOA. Major degradation intermediates, fluoride ions and perfluorinated carboxylic acids (PFCAs) with shorter chain lengths were detected during PFOA degradation. A possible pathway for photocatalytic degradation of PFOA is proposed based on the experimental results. Therefore, this studies indicates a potential new material and method for the efficient treatment of PFCA pollutants under mild conditions.

Impurity injection into tokamak plasmas by erosion probes

International Nuclear Information System (INIS)

Hildebrandt, D.; Bakos, J.S.; Buerger, G.; Paszti, F.; Petravich, G.

1987-08-01

Exposing special erosion probes into the edge plasma of MT-1 the impurities Li and Ti were released and contaminated the plasma. By the use of collector probes the torodial transport of these impurities were investigated. The results indicate a preferential impurity flow into codirection of the plasma current. However, the asymmetric component of this flow is much larger than expected from the toroidal drift correlated to the plasma current. (author)

Confirmation of a blocked amino terminus of sulfhydryl oxidase

International Nuclear Information System (INIS)

Janolino, V.G.; Morrison-Rowe, S.J.; Swaisgood, H.E.

1990-01-01

The isolation of sulfhydryl oxidase from bovine milk in a suitably pure form for sequencing was carried out by transient covalent affinity chromatography of diafiltered whey using cysteinylsuccinamidopropyl-glass as matrix. The glutathione-eluted proteins were separated by SDS-PAGE. By radiolabeling the affinity chromatography-purified enzyme with [ 14 C]iodoacetate before subjecting to SDS-PAGE, the sulfhydryl oxidase band was identified, because sulfhydryl oxidase is known to be inactivated by alkylation of one sulfhydryl group per mole. The results confirmed that sulfhydryl oxidase corresponds to the 85 (± 5)-kDa band observed on SDS-PAGE. The protein band corresponding to radiolabeled sulfhydryl oxidase was recovered from SDS-PAGE gels by electrophoretic elution and by electroblotting on polyvinylidene difluoride membrane and subjected to gas phase sequencing. Precautions were taken during electrophoretic elution to prevent reactions that result in N-terminal blocking. Both methods of protein recovery yielded negative results when subjected to sequence analysis indicating that the N-terminus of sulfhydryl oxidase is blocked

Fractal growth in impurity-controlled solidification in lipid monolayers

DEFF Research Database (Denmark)

Fogedby, Hans C.; Sørensen, Erik Schwartz; Mouritsen, Ole G.

1987-01-01

A simple two-dimensional microscopic model is proposed to describe solidifcation processes in systems with impurities which are miscible only in the fluid phase. Computer simulation of the model shows that the resulting solids are fractal over a wide range of impurity concentrations and impurity...... diffusional constants. A fractal-forming mechanism is suggested for impurity-controlled solidification which is consistent with recent experimental observations of fractal growth of solid phospholipid domains in monolayers. The Journal of Chemical Physics is copyrighted by The American Institute of Physics....

Impurity effects in the electrothermal instability

International Nuclear Information System (INIS)

Tomimura, A.; Azevedo, M.T. de

1982-01-01

A 'impure' plasma model is proposed based on the homogeneous hydrogen plasma used in the theory formulated by Tomimura and Haines to explain the electrothermal instable mode growth with the wave vector perpendicular to the applied magnetic field. The impurities are introduced implicitly in the transport coefficients of the two-fluid model through a effective charge number Z sub(eff). (Author) [pt

Transport and re-deposition of limiter-released metal impurities

International Nuclear Information System (INIS)

Claasen, H.A.; Repp, H.

1983-01-01

The transport parallel B-vector and re-deposition of limiter- (or divertor-target-)released metal impurities in a given counter-streaming scrape-off layer plasma is studied analytically by using a kinetic approach. Electron impact ionization, Coulomb collisions with the hydrogen ions, and impurity ion acceleration in a pre-sheath electric field are accounted for. The friction and electric-field forces provide the driving forces for impurity re-cycling in front of the limiter. Both hydrogen ion sputtering and self-sputtering are included (the latter for impurity emission perpendicular to the limiter surface). The analytical formulas are numerically evaluated for the example of sputtered iron impurities, assuming a simple model for a scrape-off layer plasma in contact with a stainless-steel poloidal ring limiter. (author)

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.

2016-07-25

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Optical study of the band structure of wurtzite GaP nanowires

KAUST Repository

Assali, S.; Greil, J.; Zardo, I.; Belabbes, Abderrezak; de Moor, M. W. A.; Koelling, S.; Koenraad, P. M.; Bechstedt, F.; Bakkers, E. P. A. M.; Haverkort, J. E. M.

2016-01-01

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Transitions and excitations in a superfluid stream passing small impurities

KAUST Repository

Pinsker, Florian

2014-05-08

We analyze asymptotically and numerically the motion around a single impurity and a network of impurities inserted in a two-dimensional superfluid. The criticality for the breakdown of superfluidity is shown to occur when it becomes energetically favorable to create a doublet—the limiting case between a vortex pair and a rarefaction pulse on the surface of the impurity. Depending on the characteristics of the potential representing the impurity, different excitation scenarios are shown to exist for a single impurity as well as for a lattice of impurities. Depending on the lattice characteristics it is shown that several regimes are possible: dissipationless flow, excitations emitted by the lattice boundary, excitations created in the bulk, and the formation of large-scale structures.

Impurity concentration limits and activation in fusion reactor structural materials

International Nuclear Information System (INIS)

Zucchetti, M.

1991-01-01

This paper examines waste management problems related to impurity activation in first-wall, shield, and magnet materials for fusion reactors. Definitions of low activity based on hands-on recycling, remote recycling, and shallow land burial waste management criteria are discussed. Estimates of the impurity concentration in low-activation materials (elementally substituted stainless steels and vanadium alloys) are reported. Impurity activation in first-wall materials turns out to be critical after a comparison of impurity concentration limits and estimated levels. Activation of magnet materials is then considered: Long-term activity is not a concern, while short-term activity is. In both cases, impurity activation is negligible. Magnet materials, and all other less flux-exposed materials, have no practical limitation on impurities in terms of induced radioactivity

Transitions and excitations in a superfluid stream passing small impurities

KAUST Repository

Pinsker, Florian; Berloff, Natalia G.

2014-01-01

We analyze asymptotically and numerically the motion around a single impurity and a network of impurities inserted in a two-dimensional superfluid. The criticality for the breakdown of superfluidity is shown to occur when it becomes energetically favorable to create a doublet—the limiting case between a vortex pair and a rarefaction pulse on the surface of the impurity. Depending on the characteristics of the potential representing the impurity, different excitation scenarios are shown to exist for a single impurity as well as for a lattice of impurities. Depending on the lattice characteristics it is shown that several regimes are possible: dissipationless flow, excitations emitted by the lattice boundary, excitations created in the bulk, and the formation of large-scale structures.

The origin of metal impurities in DIVA

International Nuclear Information System (INIS)

Ohasa, Kazumi; Sengoku, Seio; Maeda, Hikosuke; Ohtsuka, Hideo; Yamamoto, Shin

1978-10-01

The origin of metal impurities in DIVA (JFT-2a Tokamak) has been studied experimentally. Three processes of metal impurity release from the first wall were identified; i.e. ion sputtering, evaporation, and arcing. Among of these, ion sputtering is the predominant process in the quiet phase of the discharge, which is characterized by no spikes in the loop voltage and no localized heat flux concentrations on the first wall. ''Cones'' formation due to the sputtering is observed on the gold protection plate (guard limiter) exposed to about 10,000 discharges by scanning electron micrograph. In the SEM photographs, the spacial distribution of cones on the shell surface due to the ion sputtering coincides with the spacial distribution of intensity of Au-I line radiation. Gold is the dominant metal impurity in DIVA. The honeycomb structure can decrease release of the metal impurity. (author)

Study by nuclear techniques of the impurity-defect interaction in implanted metals

International Nuclear Information System (INIS)

Thome, Lionel.

1978-01-01

The properties of out equilibrium alloys formed by impurity implantation are strongly influenced by radiation damage created during implantation. This work presents a study, via hyperfine interaction and lattice location experiments, of the impurity-defect interaction in ion implanted metals. When the impurity and defect concentrations in the implanted layer are small, i.e. when impurities are uniformly recoil implanted in the whole crystal volume following a nuclear reaction (Aq In experiments), the impurity interacts with its own damage cascade. In this case, a vacancy is found to be trapped by a fraction of impurities during an athermal process. The value of this fraction does not seem to depend critically on impurity and host. When the impurity and defect concentrations are such that defect cascades interact, i.e. when impurities are implanted with an isotope separator (Fe Yb experiments), the observed impurity-vacancy (or vacancy cluster) interactions depend then strongly on the nature of impurity and host. An empirical relation, which indicates the importance of elastic effects, has been found between the proportion of impurities interacting with defects and the difference between impurity and host atom radii. At implantation temperature such that vacancies are mobile, the impurity-defect interaction depends essentially on vacancy migration. A model based on chemical kinetics has been developed to account for the variation with temperature of measured quantities [fr

Impurity dynamics in stellarator W7-AS plasmas

International Nuclear Information System (INIS)

Igitkhanov, Yuri; Beidler, Craig D.; Burhenn, Reiner; Polunovsky, Eduard; Yamazaki, Kozo

2006-01-01

Numerical efforts to understand the neoclassical transport of impurities in stellarator plasmas have been undertaken. The new code solves the radial continuity equations for each ionization stage of the impurity ions for given background plasma profiles and magnetic configuration. An analytic description of the neoclassical transport coefficients based on numerical results from the DKES (Drift Kinetic Equation Solver) code and monoenergetic Monte-Carlo calculation (C.D. Beidler et al., EPS 1994), is here applied for impurity transport coefficients. The transition between the different charge states due to the ionization and recombination in balance equation is described by using the ADAS (Atomic Data and Analysis Structure) database. The impurity behavior in some typical discharges from W7-AS with moderate (NC) and improved energy confinement (HDH) has been considered. It is shown that the spatial distribution results from the competition between the radial electric field and the thermal force (which together produce a convective flux), and the diffusive term, which flattens the radial impurity distribution. The impurity ions are localized at the radial position where the convective flux goes through zero. It is also shown that for typical stellarator discharges there is no pronounced temperature screening effect as in tokamak plasmas. (author)

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

International Nuclear Information System (INIS)

Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

2010-01-01

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.

Impurity and trace tritium transport in tokamak edge turbulence

DEFF Research Database (Denmark)

Naulin, V.

2005-01-01

The turbulent transport of impurity or minority species, as for example tritium, is investigated in drift-Alfven edge turbulence. The full effects of perpendicular and parallel convection are kept for the impurity species. The impurity density develops a granular structure with steep gradients...... and locally exceeds its initial values due to the compressibility of the flow. An approximate decomposition of the impurity flux into a diffusive part and an effective convective part (characterized by a pinch velocity) is performed and a net inward pinch effect is recovered. The pinch velocity is explained...

Impurities in radioactive solutions for gamma spectroscopy

International Nuclear Information System (INIS)

Delgado, J.U.

1990-01-01

The absolute and relative methods for radioactive sources calibration, like 4 Πβ-γ and 4Πγ ionization chamber respectively, allows to reach 0,1% of exactiness in activity measurement, but cannot distinguish radioactive impurities that interfere in the activity. Then, one of the problems associated to a quality control of calibrated sources furnished to users is the identification and quantification of the impurities. In this work, a routine technical procedure, using the facilities of gamma spectrometry method that allows to identify and to determine the impurities relative contribution to the source main radionuclide activity, is described. (author) [pt

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

Science.gov (United States)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

EUV impurity study of the Alcator tokamak

International Nuclear Information System (INIS)

Terry, J.L.; Chen, K.I.; Moos, H.W.; Marmar, E.S.

1977-06-01

The intensity of resonance line radiation from oxygen, nitrogen, carbon and molybdenum impurities has been measured in the high field (80 kG), high density (6 x 10 14 cm -3 ) discharges of the Alcator tokamak, using a 0.4 m normal incidence monochromator (300 to 1300 A) with its line of sight fixed along a major radius. The total light impurity concentrations were 2 x 10 -3 , 7 x 10 -4 , and 3 x 10 -3 at central electron densities of 4.5 x 10 13 cm -3 (burnout), 4.0 x 10 13 (low density plateau) and 6.0 x 10 14 (high density plateau). Both a simple model and a computer code which included Pfirsch-Schluter impurity diffusion were used to estimate oxygen influxes of 1.6 x 10 13 cm -2 sec -1 and 1.5 x 10 14 cm -2 sec -1 at the plasma edge in the low and high density emission plateaus. The resulting values of Z/sub eff/, including the contributions due to both the light impurities and molybdenum, were close to one. The power lost through the impurity line radiation accounted for approximately equal to 7 percent of the total ohmic input power at high densities

Transport of impurities during H-mode pulses in JET

International Nuclear Information System (INIS)

Giannella, R.; Gottardi, N.; Mompean, F.; Mori, H.; Pasini, D.; Stork, D.; Barnsley, R.; Hawkes, N.C.; Lawson, K.

1990-01-01

The transport of impurities during the H-mode is very different from that observed in the other regimes. This is clearly evident in the quiescent discharges where the confinement time of impurities τ I are measured in all the quiescent H-mode discharges in spite of the variety of impurity behavior observed corresponding to different plasma parameters and operating scenarios. The condition of the machine has an influence on the role played by the various impurities, but this does not seem to affect the flow patterns of these ions substantially. In particular oxygen, which was often detected as the dominant radiator, can be reduced to a negligible fraction by He conditioning of the carbon X-point tiles or limiters or by evaporating beryllium in the vacuum vessel. Nevertheless the behaviour of the residual impurities in otherwise similar discharges remains substantially unchanged. The transport patterns appear in fact to be affected by the plasma parameters and their profiles. In particular, two extreme transport regimes are presented in the following. These discharges have been modelled with the aid of a recently developed fully time-dependent impurity transport code using heuristic profiles for the impurity diffusion D and the convection velocity v. (author) 4 refs., 5 figs

Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

International Nuclear Information System (INIS)

Filatov, D. O.; Zimovets, I. A.; Isakov, M. A.; Kuznetsov, V. P.; Kornaukhov, A. V.

2011-01-01

The method of ballistic electron emission spectroscopy is used for the first time to study the energy spectrum of Er-impurity complexes in Si. The features are observed in the ballistic electron spectra of mesa diodes based on p + -n + Si structures with a thin (∼30 nm) p + -Si:Er surface layer in the region of ballistic-electron energies eV t lower than the conduction-band-edge energy E c in this layer. They are associated with the tunnel injection of ballistic electrons from the probe of the scanning tunnel microscope to the deep donor levels of the Er-impurity complexes in the p + -Si:Er layer with subsequent thermal excitation into the conduction band and the diffusion to the p + -n + junction and the direct tunneling in it. To verify this assumption, the ballistic-electron transport was simulated in the system of the Pt probe, native-oxide layer SiO 2 -p + -Si:Er-n + , and Si substrate. By approximating the experimental ballistic-electron spectra with the modeling spectra, the ground-state energy of the Er complex in Si was determined: E d ≈ E c − 0.27 eV. The indicated value is consistent with the data published previously and obtained from the measurements of the temperature dependence of the free-carrier concentration in Si:Er layers.

Universality for 1d Random Band Matrices: Sigma-Model Approximation

Science.gov (United States)

Shcherbina, Mariya; Shcherbina, Tatyana

2018-02-01

The paper continues the development of the rigorous supersymmetric transfer matrix approach to the random band matrices started in (J Stat Phys 164:1233-1260, 2016; Commun Math Phys 351:1009-1044, 2017). We consider random Hermitian block band matrices consisting of W× W random Gaussian blocks (parametrized by j,k \\in Λ =[1,n]^d\\cap Z^d ) with a fixed entry's variance J_{jk}=δ _{j,k}W^{-1}+β Δ _{j,k}W^{-2} , β >0 in each block. Taking the limit W→ ∞ with fixed n and β , we derive the sigma-model approximation of the second correlation function similar to Efetov's one. Then, considering the limit β , n→ ∞, we prove that in the dimension d=1 the behaviour of the sigma-model approximation in the bulk of the spectrum, as β ≫ n , is determined by the classical Wigner-Dyson statistics.

Moving discrete breathers in a Klein-Gordon chain with an impurity

International Nuclear Information System (INIS)

Cuevas, J; Palmero, F; Archilla, J F R; Romero, F R

2002-01-01

We analyse the influence of an impurity in the evolution of moving discrete breathers in a Klein-Gordon chain with non-weak nonlinearity. Three different types of behaviour can be observed when moving breathers interact with the impurity: they pass through the impurity continuing their direction of movement; they are reflected by the impurity; they are trapped by the impurity, giving rise to chaotic breathers, as their Fourier power spectra show. Resonance with a breather centred at the impurity site is conjectured to be a necessary condition for the appearance of the trapping phenomenon. This paper establishes a difference between the resonance condition of the non-weak nonlinearity approach and the resonance condition with the linear impurity mode in the case of weak nonlinearity

Defect-impurity interactions in ion-implanted metals

International Nuclear Information System (INIS)

Turos, A.

1986-01-01

An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

Glycolic acid physical properties and impurities assessment

Energy Technology Data Exchange (ETDEWEB)

Lambert, D. P. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Pickenheim, B. R. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Hay, M. S. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); BIBLER, N. E. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2017-08-09

This document has been revised to add analytical data for fresh, 1 year old, and 4 year old glycolic acid as recommended in Revision 2 of this document. This was needed to understand the concentration of formaldehyde and methoxyacetic acid, impurities present in the glycolic acid used in Savannah River National Laboratory (SRNL) experiments. Based on this information, the concentration of these impurities did not change during storage. These impurities were in the glycolic acid used in the testing included in this report and in subsequent testing using DuPont (now called Chemours) supplied Technical Grade 70 wt% glycolic acid. However, these impurities were not reported in the first two versions of this report. The Defense Waste Processing Facility (DWPF) is planning to implement a nitric-glycolic acid flowsheets to increase attainment to meet closure commitment dates during Sludge Batch 9. In fiscal year 2009, SRNL was requested to determine the physical properties of formic and glycolic acid blends.

Sublattice asymmetry of impurity doping in graphene: A review

Directory of Open Access Journals (Sweden)

James A. Lawlor

2014-08-01

Full Text Available In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.

Complexity of Quantum Impurity Problems

Science.gov (United States)

Bravyi, Sergey; Gosset, David

2017-12-01

We give a quasi-polynomial time classical algorithm for estimating the ground state energy and for computing low energy states of quantum impurity models. Such models describe a bath of free fermions coupled to a small interacting subsystem called an impurity. The full system consists of n fermionic modes and has a Hamiltonian {H=H_0+H_{imp}}, where H 0 is quadratic in creation-annihilation operators and H imp is an arbitrary Hamiltonian acting on a subset of O(1) modes. We show that the ground energy of H can be approximated with an additive error {2^{-b}} in time {n^3 \\exp{[O(b^3)]}}. Our algorithm also finds a low energy state that achieves this approximation. The low energy state is represented as a superposition of {\\exp{[O(b^3)]}} fermionic Gaussian states. To arrive at this result we prove several theorems concerning exact ground states of impurity models. In particular, we show that eigenvalues of the ground state covariance matrix decay exponentially with the exponent depending very mildly on the spectral gap of H 0. A key ingredient of our proof is Zolotarev's rational approximation to the {√{x}} function. We anticipate that our algorithms may be used in hybrid quantum-classical simulations of strongly correlated materials based on dynamical mean field theory. We implemented a simplified practical version of our algorithm and benchmarked it using the single impurity Anderson model.

Impurity and particle control for INTOR

International Nuclear Information System (INIS)

Post, D.

1985-02-01

The INTOR impurity control system studies have been focused on the development of an impurity control system which would be able to provide the necessary heat removal and He pumping while satisfying the requirements for (1) minimum plasma contamination by impurities, (2) reasonable component lifetime (approx. 1 year), and (3) minimum size and cost. The major systems examined were poloidal divertors and pumped limiters. The poloidal divertor was chosen as the reference option since it offered the possibility of low sputtering rates due to the formation of a cool, dense plasma near the collector plates. Estimates of the sputtering rates associated with pumped limiters indicated that they would be too high for a reasonable system. Development of an engineering design concept was done for both the poloidal divertor and the pumped limiter

Performance enhancement of perovskite solar cells with Mg-doped TiO2 compact film as the hole-blocking layer

International Nuclear Information System (INIS)

Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

2015-01-01

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO 2 as hole-blocking layers (HBLs), which outperform cells using TiO 2 HBLs in several ways: higher open-circuit voltage (V oc ) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO 2 as compared to TiO 2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V oc . In addition, the Mg-modulated TiO 2 with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device

Scaling laws for trace impurity confinement: a variational approach

International Nuclear Information System (INIS)

Thyagaraja, A.; Haas, F.A.

1990-01-01

A variational approach is outlined for the deduction of impurity confinement scaling laws. Given the forms of the diffusive and convective components to the impurity particle flux, we present a variational principle for the impurity confinement time in terms of the diffusion time scale and the convection parameter, which is a non-dimensional measure of the size of the convective flux relative to the diffusive flux. These results are very general and apply irrespective of whether the transport fluxes are of theoretical or empirical origin. The impurity confinement time scales exponentially with the convection parameter in cases of practical interest. (orig.)

Zirconium analysis. Impurities determination by spark mass specrometry

International Nuclear Information System (INIS)

Anon.

Determination of impurities in zirconium, suitable for atomic content greater than 10 -8 but particularly adapted for low contents. The method is quantitative only if a reference sample is available (metallic impurities) [fr

Isospin impurity and super-allowed β transitions

International Nuclear Information System (INIS)

Sagawa, H.; Van Giai Nguyen; Suzuki, T.

1999-01-01

We study the effect of isospin impurity on the super-allowed Fermi β decay using microscopic HF and RPA (or TDA) model taking into account CSB and CIB interactions. It is found that the isospin impurity of N = Z nuclei gives enhancement of the sum rule of Fermi transition probabilities. On the other hand, the super-allowed transitions between odd-odd J = 0 nuclei and even-even J = 0 nuclei are quenched because on the cancellation of the isospin impurity effects of mother and daughter nuclei. An implication of the calculated Fermi transition rate on the unitarity of Cabbibo-Kobayashi-Maskawa mixing matrix is also discussed. (authors)

Dynamics of impurities in the scrape-off layer

International Nuclear Information System (INIS)

Stangeby, P.C.; Commission of the European Communities, Abingdon

1988-01-01

Impurity modelling of the Scrape-Off Layer, SOL, is reviewed. Simple analytic models are sometimes adequate for relating central impurity levels to edge plasma conditions and for explaining the patterns of net erosion/deposition found on limiters. More sophisticated approaches, which are also necessary, are categorized and reviewed. A plea is made for the acquisition of a more comprehensive data base of edge plasma properties since reliable impurity modelling appears to be dependent on more extensive use of experimental input. (author)

The optimisation of limiter geometry to reduce impurity influx in tokamaks

International Nuclear Information System (INIS)

Matthews, G.F.; McCracken, G.M.; Sewell, P.; Goodall, D.H.J.; Stangeby, P.C.; Pitcher, C.S.

1987-01-01

Conventional limiters are designed to withstand large power loadings and hence are constructed with surfaces at grazing angles to the toroidal magnetic field. As a result any impurities released from the limiter surface are projected towards the centre of the plasma and are poorly screened from it. The impurity control limiter (ICL), an alternative concept which has an inverted geometry is discussed. The ICL shape is designed to direct the impurities towards the wall. Results are presented from a two-dimensional neutral particle code which maps the ionisation of carbon physically sputtered by deuterons from a carbon limiter. This ionisation source is coupled to a one-dimensional impurity transport code which calculates the implied central impurity density. The results demonstrate that the ICL achieves impurity control in two ways. Firstly, many of the sputtered impurities directed towards the wall are not ionised and return to the wall as neutrals. Secondly, much of the ionisation which does occur is located in the scrape-off layer. Here there is a strong ion sink which may also be enhanced by the flow of hydrogenic ions entraining impurity ions created close to the limiter surface. We conclude that a reduction in central impurity density of a factor of 10 is possible in a Tokamak such as DITE provided that the limiter is the main source of impurities. (author)

Anomalous temperature behavior of Sn impurities

International Nuclear Information System (INIS)

Haskel, D.; Shechter, H.; Stern, E.A.; Newville, M.; Yacoby, Y.

1993-01-01

Sn impurities in Pb and Ag hosts have been investigated by Moessbauer effect and in Pb by x-ray-absorption fine-structure (XAFS) studies. The Sn atoms are dissolved up to at least 2 at. % in Pb and up to at least 8 at. % in Ag for the temperature ranges investigated. The concentration limit for Sn-Sn interactions is 1 at. % for Pb and 2 at. % for Ag as determined experimentally by lowering the Sn concentration until no appreciable change occurs in the Moessbauer effect. XAFS measurements verify that the Sn impurities in Pb are dissolved and predominantly at substitutional sites. For both hosts the temperature dependence of the spectral intensities of isolated Sn impurities below a temperature T 0 is as expected for vibrating about a lattice site. Above T 0 the Moessbauer spectral intensity exhibits a greatly increased rate of drop-off with temperature without appreciable broadening. This drop-off is too steep to be explained by ordinary anharmonic effects and can be explained by a liquidlike rapid hopping of the Sn, localized about a lattice site. Higher-entropy-density regions of radii somewhat more than an atomic spacing surround such impurities, and can act as nucleation sites for three-dimensional melting

Interaction of ring dark solitons with ring impurities in Bose-Einstein condensates

International Nuclear Information System (INIS)

Xue Jukui

2005-01-01

The interaction of ring dark solitons/vortexes with the ring-shaped repulsive and attractive impurities in two-dimensional Bose-Einstein condensates is investigated numerically. Very rich interaction phenomena are obtained, i.e., not only the interaction between the ring soliton and the impurity, but also the interaction between vortexes and the impurity. The interaction characters, i.e., snaking of ring soliton, quasitrapping or reflection of ring soliton and vortexes by the impurity, strongly depend on initial ring soliton velocity, impurity strength, initial position of ring soliton and impurity. The numerical results also reveal that ring dark solitons/vortexes can be trapped and dragged by an adiabatically moving attractive ring impurity

Strong quantum scarring by local impurities

Science.gov (United States)

Luukko, Perttu J. J.; Drury, Byron; Klales, Anna; Kaplan, Lev; Heller, Eric J.; Räsänen, Esa

2016-11-01

We discover and characterise strong quantum scars, or quantum eigenstates resembling classical periodic orbits, in two-dimensional quantum wells perturbed by local impurities. These scars are not explained by ordinary scar theory, which would require the existence of short, moderately unstable periodic orbits in the perturbed system. Instead, they are supported by classical resonances in the unperturbed system and the resulting quantum near-degeneracy. Even in the case of a large number of randomly scattered impurities, the scars prefer distinct orientations that extremise the overlap with the impurities. We demonstrate that these preferred orientations can be used for highly efficient transport of quantum wave packets across the perturbed potential landscape. Assisted by the scars, wave-packet recurrences are significantly stronger than in the unperturbed system. Together with the controllability of the preferred orientations, this property may be very useful for quantum transport applications.

Impurities that cause difficulty in stripping actinides from commercial tetraalkylcarbamoylmethylphosphonates

International Nuclear Information System (INIS)

Bahner, C.T.; Shoun, R.R.; McDowell, W.J.

1977-09-01

Dihexyl[(diethylcarbamoyl)methyl]phosphonate (DHDECMP) in diethylbenzene extracts actinides well from 6 M nitric acid solution, but commercially available DHDECMP contains impurities which interfere with stripping the actinides from the organic extract. DHDECMP purified by molecular distillation does not contain these impurities, but the pot residue contains increased concentrations of them. Heating the purified DHDECMP causes the formation of products which interfere with stripping in the same way, suggesting that high temperatures employed in the manufacture of DHDECMP may produce the offending impurities. These impurities can be separated from the heat-decomposed material or the pot residues by dilution with a large volume of hexanes (causing part of the impurities to separate as a second liquid phase) followed by equilibration of the hexane solution with dilute alkali. After the treatment with hexane and dilute alkali, the DHDECMP is readily recovered and functions well in the actinide extraction process. Dibutyl[(dibutylcarbamoyl)methyl]-phosphonate (DBDBCMP) and di(2-ethylhexyl)[(diethylcarbamoyl)-methyl]phosphonate (DEHDECMP) are purified less effectively by these methods. Similar separation methods using diethylbenzene or CCl 4 as solvent do not remove impurities as completely as the hexane process. Impurities can also be removed from a benzene solution of the DHDECMP pot residue by passing it through a column packed with silica gel or diethylaminoethyl cellulose. These impurities have been separated into fractions for analytical examination by use of various solvents and by column chromatography. Hexyl hydrogen [(diethylcarbamoyl)methyl]-phosphonate has been identified tentatively as a principal objectionable impurity. Dihexyl phosphoric acid and possibly dihexylphosphonate have been identified in other fractions

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Synthesis, Isolation and Characterization of Process-Related Impurities in Oseltamivir Phosphate

Directory of Open Access Journals (Sweden)

Yogesh Kumar Sharma

2012-01-01

Full Text Available Three known impurities in oseltamivir phosphate bulk drug at level 0.1% (ranging from 0.05-0.1% were detected by gradient reverse phase high performance liquid chromatography. These impurities were preliminarily identified by the mass number of the impurities. Different experiments were conducted and finally the known impurities were synthesized and characterized.

Properties of the 4.45 eV optical absorption band in LiF:Mg, Ti

International Nuclear Information System (INIS)

Nail, I.; Oster, L.; Horowitz, Y. S.; Biderman, S.; Belaish, Y.

2006-01-01

The optical absorption (OA) and thermoluminescence (TL) of dosimetric LiF:Mg,Ti (TLD-100) as well as nominally pure LiF single crystal have been studied as a function of irradiation dose, thermal and optical bleaching in order to investigate the role of the 4.45 eV OA band in low temperature TL. Computerised deconvolution was used to resolve the absorption spectrum into individual gaussian bands and the TL glow curve into glow peaks. Although the 4.45 eV OA band shows thermal decay characteristics similar to the 4.0 eV band its dose filling constant and optical bleaching properties suggest that it cannot be associated with the TL of composite peaks 4 or 5. Its presence in optical grade single crystal LiF further suggests that it is an intrinsic defect or possibly associated with chance impurities other than Mg, Ti. (authors)

Eclogite-facies metamorphism in impure marble from north Qaidam orogenic belt: Geodynamic implications for early Paleozoic continental-arc collision

Science.gov (United States)

Chen, Xin; Xu, Rongke; Schertl, Hans-Peter; Zheng, Youye

2018-06-01

In the North Qaidam ultrahigh-pressure (UHP) metamorphic belt, impure marble and interbedded eclogite represent a particular sedimentary provenance and tectonic setting, which have important implications for a controversial problem - the dynamic evolution of early Paleozoic subduction-collision complexes. In this contribution, detailed field work, mineral chemistry, and whole-rock geochemistry are presented for impure marble to provide the first direct evidence for the recycling of carbonate sediments under ultrahigh-pressures during subduction and collision in the Yuka terrane, in the North Qaidam UHP metamorphic belt. According to conventional geothermobarometry, pre-peak subduction to 0.8-1.3 GPa/485-569 °C was followed by peak UHP metamorphism at 2.5-3.3 GPa/567-754 °C and cooling to amphibolite facies conditions at 0.6-0.7 GPa/571-589 °C. U-Pb dating of zircons from impure marble reveals a large group with ages ranging from 441 to 458 Ma (peak at 450 Ma), a smaller group ranging from 770 to 1000 Ma (peak at 780 Ma), and minor >1.8 Ga zircon aged ca. 430 Ma UHP metamorphism. The youngest detrital zircons suggest a maximum depositional age of ca. 442 Ma and a burial rate of ca. 1.0-1.1 cm/yr when combined with P-T conditions and UHP metamorphic age. The REE and trace element patterns of impure marble with positive Sr and U anomalies, negative high field strength elements (Nb, Ta, Zr, Hf, and Ti), and Ce anomalies imply that the marble had a marine limestone precursor. Impure marble intercalated with micaschist and eclogite was similar to limestone and siltstone protoliths deposited in continental fore-arc or arc setting with basic volcanic activity. Therefore, the Yuka terrane most likely evolved in a continental island arc setting during the Paleozoic. These data suggest that metasediments were derived from a mixture of Proterozoic continental crust and juvenile early Paleozoic oceanic and/or island arc crust. In addition, their protoliths were likely

Donor impurity states and related optical response in a lateral coupled dot-ring system under applied electric field

Energy Technology Data Exchange (ETDEWEB)

Correa, J.D. [Departamento de Ciencias Básicas, Universidad de Medellín, Medellín (Colombia); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2015-09-01

A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within the effective mass and parabolic band approximations by means of an exact diagonalization procedure. The states and the optical response in each case show significant sensitivity to the geometrical distribution of confining energies as well as to the strength of the applied field.

Donor impurity states and related optical response in a lateral coupled dot-ring system under applied electric field

International Nuclear Information System (INIS)

Correa, J.D.; Mora-Ramos, M.E.; Duque, C.A.

2015-01-01

A study on the effects of an externally applied electric field on the linear optical absorption and relative refractive index change associated with transitions between off-center donor impurity states in laterally coupled quantum dot-ring system is reported. Electron states are calculated within the effective mass and parabolic band approximations by means of an exact diagonalization procedure. The states and the optical response in each case show significant sensitivity to the geometrical distribution of confining energies as well as to the strength of the applied field

In-gap bound states induced by interstitial Fe impurities in iron-based superconductors

Energy Technology Data Exchange (ETDEWEB)

Zhang, Degang, E-mail: degangzhang@yahoo.com

2015-12-15

Highlights: • We provide an explanation for the interesting STM observation of the robust zero energy bound state on the interstitial Fe impurities in iron-based superconductors. - Abstract: Based on a two-orbit four-band tight binding model, we investigate the low-lying electronic states around the interstitial excess Fe ions in the iron-based superconductors by using T-matrix approach. It is shown that the local density of states at the interstitial Fe impurity (IFI) possesses a strong resonance inside the gap, which seems to be insensitive to the doping and the pairing symmetry in the Fe–Fe plane, while a single or two resonances appear at the nearest neighboring (NN) Fe sites. The location and height of the resonance peaks only depend on the hopping t and the pairing parameter Δ{sub I} between the IFI and the NN Fe sites. These in-gap resonances are originated in the Andreev’s bound states due to the quasiparticle tunneling through the IFI, leading to the change of the magnitude of the superconducting order parameter. When both t and Δ{sub I} are small, this robust zero-energy bound state near the IFI is consistent with recent scanning tunneling microscopy observations.

Oscillations of quantum transport through double-AB rings with magnetic impurity

International Nuclear Information System (INIS)

Gao Yingfang; Liang, J-Q

2006-01-01

We have studied the effect of impurity scattering on the quantum transport through double AB rings in the presence of spin-flipper in the middle lead in terms of one-dimensional quantum waveguide theory. The electron interacts with the impurity through the exchange interaction leading to spin-flip scattering. Transmissions in the spin-flipped and non-spin-flipped channels are calculated explicitly. It is found that the overall transmission and the conductance are distorted due to the impurity scattering. The extent of distortion not only depends on the strength of the impurity potential but also on the impurity position. Moreover, the transmission probability and the conductance are modulated by the magnetic flux, the size of the ring and the impurity potential strength as well

Investigation of impurity defects in α-iron by molecular dynamics method

International Nuclear Information System (INIS)

Kevorkyan, Yu.R.

1986-01-01

Investigation of the configuration of impurity defects in α-iron by the molecular dynamics method is presented. The Jhonson model potential has been used to calculate the interaction of matrix atoms. The impurity-matrix atom interaction is described by the same form of the potential shifted along the axis of interatomic distances for a definite value. The correspondence between the shift value and change in the radius of the impurity defect is established on the basis of calculation of the relaxation volume. Possible configurations of the impurity - interstitial matrix atom complexes are obtained for the given model of the impurity defect, dimensional boundaries of possible transitions between different configurations are determined. Formation and bound energies, relaxation volumes of impurity defects are calculated

Anomalous diffusion, clustering, and pinch of impurities in plasma edge turbulence

DEFF Research Database (Denmark)

Priego, M.; Garcia, O.E.; Naulin, V.

2005-01-01

The turbulent transport of impurity particles in plasma edge turbulence is investigated. The impurities are modeled as a passive fluid advected by the electric and polarization drifts, while the ambient plasma turbulence is modeled using the two-dimensional Hasegawa-Wakatani paradigm for resistive...... drift-wave turbulence. The features of the turbulent transport of impurities are investigated by numerical simulations using a novel code that applies semi-Lagrangian pseudospectral schemes. The diffusive character of the turbulent transport of ideal impurities is demonstrated by relative...... orientation determined by the charge of the impurity particles. Second, a radial pinch scaling linearly with the mass-charge ratio of the impurities is discovered. Theoretical explanation for these observations is obtained by analysis of the model equations. (C) 2005 American Institute of Physics....

Depolarization of diffusing spins by paramagnetic impurities

International Nuclear Information System (INIS)

Schillaci, M.E.; Hutson, R.L.; Heffner, R.H.; Leon, M.; Dodds, S.A.; Estle, T.L.

1981-01-01

We study the depolarization of diffusing spins (muons) interacting with dilute paramagnetic impurities in a solid using a simple computational model which properly treats the muon motion and preserves correct muon-impurity distances. Long-range (dipolar) and nearest-neighbor (contact) interactions are treated together. Diffusion parameters are deduced and model comparisons made for AuGd (300 ppm). (orig.)

Innovative sludge pretreatment technology for impurity separation using micromesh.

Science.gov (United States)

Mei, Xiaojie; Han, Xiaomeng; Zang, Lili; Wu, Zhichao

2018-05-23

In order to reduce the impacts on sludge treatment facilities caused by impurities such as fibers, hairs, plastic debris, and coarse sand, an innovative primary sludge pretreatment technology, sludge impurity separator (SIS), was proposed in this study. Non-woven micromesh with pore size of 0.40 mm was used to remove the impurities from primary sludge. Results of lab-scale tests showed that impurity concentration, aeration intensity, and channel gap were the key operation parameters, of which the optimized values were below 25 g/L, 0.8 m 3 /(m 2  min), and 2.5 cm, respectively. In the full-scale SIS with treatment capacity of 300 m 3 /day, over 88% of impurities could be removed from influent and the cleaning cycle of micromesh was more than 16 days. Economic analysis revealed that the average energy consumption was 1.06 kWh/m 3 treated sludge and operation cost was 0.6 yuan/m 3 treated sludge.

Carbon impurity transport around limiters in the DITE tokamak

International Nuclear Information System (INIS)

Pitcher, C.S.; Stangeby, P.C.; Goodall, D.H.J.; Matthews, G.F.; McCracken, G.M.

1989-01-01

The transport of impurity ions originating at the limiter in a tokamak is critically dependent on the location of the ion in the boundary plasma. In the confined plasma, just inboard of the limiter, impurity ions will disperse freely into the discharge whilst in the scrape-off layer the pre-sheath plasma flow and the associated ambipolar electric field may tend to sweep impurities back to the limiter surface. In this paper we have studied, both by experiment and by theory, the transport of carbon impurity ions in the vicinity of the limiter. By comparing experimental measurements of the spatial distributions of impurities around the limiter with that predicted from a Monte Carlo computer code it appears that the parallel dispersal on closed field lines in the confined plasma is consistent with classical transport processes and that in the scrape-off layer the dispersal is indeed impeded by the pre-sheath plasma flow. (orig.)

Interactions of Ultracold Impurity Particles with Bose-Einstein Condensates

Science.gov (United States)

2015-06-23

AFRL-OSR-VA-TR-2015-0141 INTERACTIONS OF ULTRACOLD IMPURITY PARTICLES WITH BOSE- EINSTEIN CONDENSATES Georg Raithel UNIVERSITY OF MICHIGAN Final...SUBTITLE Interactions of ultracold impurity particles with Bose- Einstein Condensates 5a. CONTRACT NUMBER FA9550-10-1-0453 5b. GRANT NUMBER 5c...Interactions of ultracold impurity particles with Bose- Einstein Condensates Contract/Grant #: FA9550-10-1-0453 Reporting Period: 8/15/2010 to 2/14

Impurity production and acceleration in CTIX

Energy Technology Data Exchange (ETDEWEB)

Buchenauer, D. [Sandia National Laboratories, MS-9161, P.O. Box 969, Livermore, CA 94550 (United States)], E-mail: dabuche@sandia.gov; Clift, W.M. [Sandia National Laboratories, MS-9161, P.O. Box 969, Livermore, CA 94550 (United States); Klauser, R.; Horton, R.D. [CTIX Group, University of California at Davis, Davis, CA 95616 (United States); Howard, S.J. [General Fusion Inc., Burnaby, BC V5A 3H4 (Canada); Brockington, S.J. [HyperV Technologies Corp., Chantilly, VA 20151 (United States); Evans, R.W.; Hwang, D.Q. [CTIX Group, University of California at Davis, Davis, CA 95616 (United States)

2009-06-15

The Compact Toroid Injection Experiment (CTIX) produces a high density, high velocity hydrogen plasma that maintains its configuration in free space on a MHD resistive time scale. In order to study the production and acceleration of impurities in the injector, several sets of silicon collector probes were exposed to spheromak-like CT's exiting the accelerator. Elemental analysis by Auger Electron Spectroscopy indicated the presence of O, Al, Fe, and Cu in films up to 200 A thickness (1000 CT interactions). Using a smaller number of CT interactions (10-20), implantation of Fe and Cu was measured by Auger depth profiling. The amount of impurities was found to increase with accelerating voltage and number of CT interactions while use of a solenoidal field reduced the amount. Comparison of the implanted Fe and Cu with TRIM simulations indicated that the impurities were traveling more slowly than the hydrogen CT.

Electrochemically Scavenging the Silica Impurities at the Ni-YSZ Triple Phase Boundary of Solid Oxide Cells

DEFF Research Database (Denmark)

Tao, Youkun; Shao, Jing; Cheng, Shiyang

2016-01-01

Silica impurity originated from the sealing or raw materials of the solid oxide cells (SOCs) accumulating at the. Ni-YSZ triple phase boundaries (TPBs) is known as one major reason for electrode passivation. Here we report nanosilica precipitates inside Ni grains instead of blocking the TPBs when...... operating the SOCs at vertical bar i vertical bar >= 1.5 A cm-2 for electrolysis of H2O/CO2. An electrochemical scavenging mechanism was proposed to explain this unique behavior: the removal of silica proceeded through the reduction of the silica to Si under strong cathodic polarization, followed by bulk...

A reconfigurable frequency-selective surface for dual-mode multi-band filtering applications

Science.gov (United States)

Majidzadeh, Maryam; Ghobadi, Changiz; Nourinia, Javad

2017-03-01

A reconfigurable single-layer frequency-selective surface (FSS) with dual-mode multi-band modes of operation is presented. The proposed structure is printed on a compact 10 × 10 mm2 FR4 substrate with the thickness of 1.6 mm. A simple square loop is printed on the front side while another one along with two defected vertical arms is deployed on the backside. To realise the reconfiguration, two pin diodes are embedded on the backside square loop. Suitable insertion of conductive elements along with pin diodes yields in dual-mode multi-band rejection of applicable in service frequency ranges. The first operating mode due to diodes' 'ON' state provides rejection of 2.4 GHz WLAN in 2-3 GHz, 5.2/5.8 GHz WLAN and X band in 5-12 GHz, and a part of Ku band in 13.9-16 GHz. In diodes 'OFF' state, the FSS blocks WLAN in 4-7.3 GHz, X band in 8-12.7 GHz as well as part of Ku band in 13.7-16.7 GHz. As well, high attenuation of incident waves is observed by a high shielding effectiveness (SE) in the blocked frequency bands. Also, a stable behaviour against different polarisations and angles of incidence is obtained. Comprehensive studies are conducted on a fabricated prototype to assess its performance from which encouraging results are obtained.

Modeling of the Microchemistry for Diffusion of Selected Impurities in Uranium

International Nuclear Information System (INIS)

Kirkpatrick, J. R.; Bullock, J.S. IV

2001-01-01

Unalloyed metallic uranium used in some work done at Y-12 contains small quantities of impurities, the three most significant of which are carbon, iron, and silicon. During metallurgical processing, as the metal cools from a molten condition towards room temperature, the metallic matrix solution becomes supersaturated in each of the impurities whose concentration exceeds the solubility limit. Many impurity atoms form compounds with uranium that precipitate out of the solution, thus creating and growing inclusions. The objective of the present work is to study the distribution of impurity atoms about some of the inclusions, with a view toward examining the effect of the interaction between inclusions on the impurity atom distribution. The method used is time-dependent mass diffusion from the supersaturated solution to the surfaces of the inclusions. Micrographs of metal samples suggest that the inclusions form in successive stages. After each inclusion forms, it begins to draw impurity atoms from its immediate vicinity, thus altering the amounts and distributions of impurity atoms available for formation and growth of later inclusions. In the present work, a one-dimensional spherical approximation was used to simulate inclusions and their regions of influence. A first set of calculations was run to simulate the distribution of impurity atoms about the largest inclusions. Then, a second set of calculations was run to see how the loss of impurity atoms to the largest inclusions might affect the distribution of impurity atoms around the next stage of inclusions. Plots are shown for the estimated distributions of impurity atoms in the region of influence about the inclusions for the three impurities studied. The authors believe that these distributions are qualitatively correct. However, there is enough uncertainty about precisely when inclusions nucleate and begin to grow that one should not put too much reliance on the quantitative results. This work does provide a

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.

Science.gov (United States)

Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A

2004-07-23

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society

Continuous-time quantum Monte Carlo impurity solvers

Science.gov (United States)

Gull, Emanuel; Werner, Philipp; Fuchs, Sebastian; Surer, Brigitte; Pruschke, Thomas; Troyer, Matthias

2011-04-01

Continuous-time quantum Monte Carlo impurity solvers are algorithms that sample the partition function of an impurity model using diagrammatic Monte Carlo techniques. The present paper describes codes that implement the interaction expansion algorithm originally developed by Rubtsov, Savkin, and Lichtenstein, as well as the hybridization expansion method developed by Werner, Millis, Troyer, et al. These impurity solvers are part of the ALPS-DMFT application package and are accompanied by an implementation of dynamical mean-field self-consistency equations for (single orbital single site) dynamical mean-field problems with arbitrary densities of states. Program summaryProgram title: dmft Catalogue identifier: AEIL_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEIL_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: ALPS LIBRARY LICENSE version 1.1 No. of lines in distributed program, including test data, etc.: 899 806 No. of bytes in distributed program, including test data, etc.: 32 153 916 Distribution format: tar.gz Programming language: C++ Operating system: The ALPS libraries have been tested on the following platforms and compilers: Linux with GNU Compiler Collection (g++ version 3.1 and higher), and Intel C++ Compiler (icc version 7.0 and higher) MacOS X with GNU Compiler (g++ Apple-version 3.1, 3.3 and 4.0) IBM AIX with Visual Age C++ (xlC version 6.0) and GNU (g++ version 3.1 and higher) compilers Compaq Tru64 UNIX with Compq C++ Compiler (cxx) SGI IRIX with MIPSpro C++ Compiler (CC) HP-UX with HP C++ Compiler (aCC) Windows with Cygwin or coLinux platforms and GNU Compiler Collection (g++ version 3.1 and higher) RAM: 10 MB-1 GB Classification: 7.3 External routines: ALPS [1], BLAS/LAPACK, HDF5 Nature of problem: (See [2].) Quantum impurity models describe an atom or molecule embedded in a host material with which it can exchange electrons. They are basic to nanoscience as

Impurity transport calculations for the limiter shadow region of a tokamak

International Nuclear Information System (INIS)

Claassen, H.A.; Repp, H.

1981-01-01

Impurity transport calculations are presented for the scrape-off layer of a tokamak with a poloidal ring limiter. The theory is based on the drift-kinetic equations for the impurity ions in their different ionization states. It is developed in the limit of low impurity concentrations under due consideration of electron impact ionization, Coulomb collisions with hydrogen ions streaming onto a neutralizing surface, a convection along the magnetic field, and a radial drift. The background plasma and the impurity sources at the walls enter the theory as input parameters. Numerical results are given for the radial profiles of density, temperature, particle flux, and energy flux of wall-released impurity ions as well as for the screening efficiency of the scrape-off layer neglecting impurity re-emission from the limiter. (author)

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

Science.gov (United States)

Goswami, Partha

2018-03-01

We calculate the electronic band dispersion of graphene monolayer on a two-dimensional transition metal dichalcogenide substrate (GrTMD) around K and K^' } points by taking into account the interplay of the ferromagnetic impurities and the substrate-induced interactions. The latter are (strongly enhanced) intrinsic spin-orbit interaction (SOI), the extrinsic Rashba spin-orbit interaction (RSOI) and the one related to the transfer of the electronic charge from graphene to substrate. We introduce exchange field ( M) in the Hamiltonian to take into account the deposition of magnetic impurities on the graphene surface. The cavalcade of the perturbations yield particle-hole symmetric band dispersion with an effective Zeeman field due to the interplay of the substrate-induced interactions with RSOI as the prime player. Our graphical analysis with extremely low-lying states strongly suggests the following: The GrTMDs, such as graphene on WY2, exhibit (direct) band-gap narrowing / widening (Moss-Burstein (MB) gap shift) including the increase in spin polarisation ( P) at low temperature due to the increase in the exchange field ( M) at the Dirac points. The polarisation is found to be electric field tunable as well. Finally, there is anticrossing of non-parabolic bands with opposite spins, the gap closing with same spins, etc. around the Dirac points. A direct electric field control of magnetism at the nanoscale is needed here. The magnetic multiferroics, like BiFeO3 (BFO), are useful for this purpose due to the coupling between the magnetic and electric order parameters.

Radiation-chemical disinfection of dissolved impurities and environmental protection

International Nuclear Information System (INIS)

Petrukhin, N.V.; Putilov, A.V.

1986-01-01

Radiation-chemical neutralization of dissolved toxic impurities formed in the production processes of different materials, while modern plants being in use, is considered. For the first time the processes of deep industrial waste detoxication and due to this peculiarities of practically thorough neutralization of dissolved toxic impurities are considered. Attention is paid to devices and economic factors of neutralization of dissolved toxic impurities. The role of radiation-chemical detoxication for environment protection is considered

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

Effect of impurity radiation on tokamak equilibrium

International Nuclear Information System (INIS)

Rebut, P.H.; Green, B.J.

1977-01-01

The energy loss from a tokamak plasma due to the radiation from impurities is of great importance in the overall energy balance. Taking the temperature dependence of this loss for two impurities characteristic of those present in existing tokamak plasmas, the condition for radial power balance is derived. For the impurities considered (oxygen and iron) it is found that the radiation losses are concentrated in a thin outer layer of the plasma and the equilibrium condition places an upper limit on the plasma paraticle number density in this region. This limiting density scales with mean current density in the same manner as is experimentally observed for the peak number density of tokamak plasmas. The stability of such equilibria is also discussed. (author)

[Impurity removal technology of Tongan injection in liquid preparation process].

Science.gov (United States)

Yang, Xu-fang; Wang, Xiu-hai; Bai, Wei-rong; Kang, Xiao-dong; Liu, Jun-chao; Wu, Yun; Xiao, Wei

2015-08-01

In order to effectively remove the invalid impurities in Tongan injection, optimize the optimal parameters of the impurity removal technology of liquid mixing process, in this paper, taking Tongan injection as the research object, with the contents of celandine alkali, and sinomenine, solids reduction efficiency, and related substances inspection as the evaluation indexes, the removal of impurities and related substances by the combined process of refrigeration, coction and activated carbon adsorption were investigated, the feasibility of the impurity removal method was definited and the process parameters were optimized. The optimized process parameters were as follows: refrigerated for 36 h, boiled for 15 min, activated carbon dosage of 0.3%, temperature 100 degrees C, adsorption time 10 min. It can effectively remove the tannin, and other impurities, thus ensure the quality and safety of products.

Effects of helium impurities on superalloys

International Nuclear Information System (INIS)

Selle, J.E.

1977-07-01

A review of the literature on the effects of helium impurities on superalloys at elevated temperatures was undertaken. The actual effects of these impurities vary depending on the alloy, composition of the gas atmosphere, and temperature. In general, exposure in helium produces significant but not catastrophic changes in the structure and properties of the alloys. The effects of these treatments on the structure, creep, fatigue, and mechanical properties of the various alloys are reviewed and discussed. Suggestions for future work are presented

Role of Sn impurity on electronic topological transitions in 122 Fe-based superconductors

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Haranath, E-mail: hng@rrcat.gov.in [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sen, Smritijit [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2016-08-25

We show that only a few percentage of Sn doping at the Ba site on BaFe{sub 2}As{sub 2}, can cause electronic topological transition, namely, the Lifshitz transition. A hole like d{sub xy} band of Fe undergoes electron like transition due to 4% Sn doping. Lifshitz transition is found in BaFe{sub 2}As{sub 2} system around all the high symmetry points. Our detailed first principles simulation predicts absence of any Lifshitz transition in other 122 family compounds like SrFe{sub 2}As{sub 2}, CaFe{sub 2}As{sub 2} in agreement with experimental observations. This work bears practical significance due to the facts that a few percentage of Sn impurity is in-built in tin-flux grown single crystals method of synthesizing 122 materials and inter-relationship among the Lifshitz transition, magnetism and superconductivity. - Highlights: • Electronic topological transition due to Sn contamination in BaFe{sub 2}As{sub 2}. • Hole like Fe-d{sub xy} band converts into electron like in 3% Sn contaminated BaFe{sub 2}As{sub 2}. • Electron like Fe-d{sub xz}, d{sub yz} bands moves above Fermi Level at X,Y points. • No Lifshitz transition found in Sn-contaminated Sr-122, Ca-122 systems.

Identification and control of unspecified impurity in trimetazidine dihydrochloride tablet formulation

Science.gov (United States)

Jefri; Puspitasari, A. D.; Talpaneni, J. S. R.; Tjandrawinata, R. R.

2018-04-01

Trimetazidine dihydrochloride is an anti-ischemic metabolic agent which is used as drug for angina pectoris treatment. The drug substance monograph is available in European Pharmacopoeia and British Pharmacopoeia, while the drug product monograph is not available in any of the pharmacopoeias. During development of trimetazidine dihydrochloride tablet formulation, we found increase of an unspecified impurity during preliminary stability study. The unspecified impurity was identified by high performance liquid chromatography coupled with mass spectrometry (LC-MS) and the molecular weight obtained was matching with the molecular weight of N-formyl trimetazidine (m/z 295). Further experiments were performed to confirm the suspected result by injecting the impurity standard and spiking formic acid into the drug substance. The retention time of N-formyl trimetazidine was similar to the unspecified impurity in drug product. Even spiking of formic acid into drug substance showed that the suspected impurity increased with increasing concentration of formic acid. The proposed mechanism of impurity formation is via amidation of piperazine moiety of trimetazidine by formic acid which present as residual solvent in tablet binder used in the formulation. Subsequently, the impurity in our product was controlled by choosing the primary packaging which could minimize the formation of impurity.

Investigation of the impurity transport in the ASDEX tokamak by spectroscopical methods

International Nuclear Information System (INIS)

Krieger, K.W.

1990-12-01

Plasma impurities: a central problem of controlled thermonuclear fusion; magnetic plasma confinement in a Tokamak; methods to the determination of plasma impurity transport coefficients - by temporally modulated gas admission; the transport equation for impurities; neoclassical and anomalous transport; harmonic analysis of time-dependent signals; solutions of the transport equation; experimental equipment and measurements; measuring results - consistency of simple transport models with radial phase measurements; linearity of the transport processes; plasma disturbance by impurity injection; determination of the diffusion coefficient by simplified transport models; comparison of transport models for impurities and background plasma; measurements of the impurity transport at the plasma edge by high modulation frequencies. (AH)

Impurity effects of hydrogen isotope retention on boronized wall in LHD

International Nuclear Information System (INIS)

Oya, Yasuhisa; Okuno, Kenji; Ashikawa, Naoko; Nishimura, Kiyohiko; Sagara, Akio

2010-11-01

The impurity effect on hydrogen isotopes retention in the boron film deposited in LHD was evaluated by means of XPS and TDS. It was found that the impurity concentrations in boron film were increased after H-H main plasma exposure in LHD. The ratio of hydrogen retention trapped by impurity to total hydrogen retention during H-H main plasma exposure was reached to 70%, although that of deuterium retention by impurity in D 2 + implanted LHD-boron film was about 35%. In addition, the dynamic chemical sputtering of hydrogen isotopes with impurity as the form of water and / or hydrocarbons was occurred by energetic hydrogen isotopes irradiation. It was expected that the enhancement of impurity concentration during plasma exposure in LHD would induce the dynamic formation of volatile molecules and their re-emission to plasma. These facts would prevent stable plasma operation in LHD, concluding that the dynamic impurity behavior in boron film during plasma exposure is one of key issues for the steady-state plasma operation in LHD. (author)

Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

Science.gov (United States)

Guzmán, G.; Escudero, R.; Silva, R.; Herrera, M.

2018-04-01

We present a study of the influence of gallium vacancy (VGa) point defects on the ferromagnetic properties of GaN:Mn and GaN:Mn,O micro- and nanostructures. Results demonstrate that the generation of these point defects enhances the ferromagnetic signal of GaN:Mn microstructures, while incorporation of oxygen as an impurity inhibits this property. XPS measurements revealed that Mn impurities in ferromagnetic GaN:Mn samples mainly exhibit a valence state of 2+. Cathodoluminescence (CL) spectra from Mn-doped GaN samples displayed emissions centered at about 1.97 eV, attributed to transitions between the 4T1-6A1 states of the Mn2+ d orbitals, and emissions centered at 2.45 and 2.9 eV, associated with the presence of VGa. CL measurements also revealed a blue shift of the GaN band-edge emission generated by the expansion of the wurtzite lattice due to Mn incorporation, which was confirmed by XRD measurements. These latter measurements also revealed an amorphization of GaN:Mn due to the incorporation of oxygen as impurities. The GaN:Mn samples were synthesized by thermal evaporation of GaN and MnCO3 powders onto Ni0.8Cr0.2/Si(100) in a horizontal furnace operated at low vacuum. The residual air inside the system was used as a source of oxygen during the synthesis of Mn and O co-doped GaN nanostructures. Mn and O impurities were incorporated into the nanostructures at different concentrations by varying the growth temperature. Energy Dispersive Spectroscopy, XRD, and XPS measurements confirmed that the obtained samples predominantly consisted of GaN.

Effect of suprathermal electrons on the impurity ionization state

International Nuclear Information System (INIS)

Ochando, M A; Medina, F; Zurro, B; McCarthy, K J; Pedrosa, M A; Baciero, A; Rapisarda, D; Carmona, J M; Jimenez, D

2006-01-01

The effect of electron cyclotron resonance heating induced suprathermal electron tails on the ionization of iron impurities in magnetically confined plasmas is investigated. The behaviour of plasma emissivity immediately after injection provides evidence of a spatially localized 'shift' towards higher charge states of the impurity. Bearing in mind that the non-inductive plasma heating methods generate long lasting non-Maxwellian distribution functions, possible implications on the deduced impurity transport coefficients, when fast electrons are present, are discussed

Impurity levels: corrections to the effective mass approximation

International Nuclear Information System (INIS)

Bentosela, F.

1977-07-01

Some rigorous results concerning the effective mass approximation used for the calculation of the impurity levels in semiconductors are presented. Each energy level is expressed as an asymptotic series in the inverse of the dielectric constant K, in the case where the impurity potential is 1/μ

Damping of elastic waves in crystals with impurities

International Nuclear Information System (INIS)

Lemanov, V.V.; Petrov, A.V.; Akhmedzhanov, F.R.; Nasyrov, A.N.

1979-01-01

Elastic wave damping and thermal conductivity of NaCl-NaBr and Y 3 AL 5 O 12 crystals with Er impurity has been examined. The experimental results on a decrease in elastic wave damping in such crystals are analyzed in the framework of the Ahiezer damping theory. The measurements were made in the frequency range of 300-1500 MHz in propagation of longitudinal and transverse elastic waves along the [100] and [110] directions. At 10 % concentration of erbium impurity the transverse wave damping decreases by a factor of three, and for longitudinal waves by a factor of two in NaBr:Cl crystals, and by approximately 10 and 30 % for NaBr:Cl and Y 3 Al 5 O 12 :Er crystals, respectively. In Y 3 Al 5 O 12 crystals, unlike NaCl-NaBr crystals, no noticeable anisotropy of damping is observed. The transVerse wave damping in impurity crystals has been shown to increase significantly with decreasing temperature and increasing the impurity concentration

Impurity investigations in the boundary layer of the DITE tokamak

International Nuclear Information System (INIS)

McCracken, G.M.; Partridge, J.W.; Erents, S.K.; Sofield, C.J.; Ferguson, S.M.

1982-01-01

The results obtained in the present investigation show large fluctuations both during discharges and from one discharge to the next. The radial density gradient of impurities in the boundary is not large. It is clear that the density and in particular dn/dt can have a strong effect on the impurity level. However there are apparently a number of other factors causing changes in impurity level which have not been well controlled in the present experiments. Possibilities include flaking from the walls, and changes in the level of the light impurities, oxygen and carbon, in the discharges. (orig./RW)

Investigation of impurity-helium solid phase decomposition

International Nuclear Information System (INIS)

Boltnev, R.E.; Gordon, E.B.; Krushinskaya, I.N.; Martynenko, M.V.; Pel'menev, A.A.; Popov, E.A.; Khmelenko, V.V.; Shestakov, A.F.

1997-01-01

The element composition of the impurity-helium solid phase (IHSP), grown by injecting helium gas jet, involving Ne, Ar, Kr, and Xe atoms and N 2 molecules, into superfluid helium, has been studied. The measured stoichiometric ratios, S = N H e / N I m, are well over the values expected from the model of frozen together monolayer helium clusters. The theoretical possibility for the freezing of two layers helium clusters is justified in the context of the model of IHSP helium subsystem, filled the space between rigid impurity centers. The process of decomposition of impurity-helium (IH)-samples taken out of liquid helium in the temperature range 1,5 - 12 K and the pressure range 10-500 Torr has been studied. It is found that there are two stages of samples decomposition: a slow stage characterized by sample self cooling and a fast one accompanied by heat release. These results suggest, that the IHSP consists of two types of helium - weakly bound and strongly bound helium - that can be assigned to the second and the first coordination helium spheres, respectively, formed around heavy impurity particles. A tendency for enhancement of IHSP thermo stability with increasing the impurity mass is observed. Increase of helium vapor pressure above the sample causes the improvement of IH sample stability. Upon destruction of IH samples, containing nitrogen atoms, a thermoluminescence induced by atom recombination has been detected in the temperature region 3-4,5 K. This suggests that numerous chemical reactions may be realized in solidified helium

Impurity studies in fusion devices using laser-fluorescence-spectroscopy

International Nuclear Information System (INIS)

Husinsky, W.R.

1980-08-01

Resonance fluorescence excitation of neutral atoms using tunable radiation from dye lasers offers a number of unique advantages for impurity studies in fusion devices. Using this technique, it is possible to perform local, time-resolved measurements of the densities and velocity distributions of metallic impurities in fusion devices without disturbing the plasma. Velocities are measured by monitoring the fluorescence intensity while tuning narrow bandwidth laser radiation through the Doppler - broadened absorbtion spectrum of the transition. The knowledge of the velocity distribution of neutral impurities is particularly useful for the determination of impurity introduction mechanisms. The laser fluorescence technique will be described in terms of its application to metallic impurities in fusion devices and related laboratory experiments. Particular attention will be given to recent results from the ISX-B tokamak using pulsed dye lasers where detection sensitivities for neutral Fe of 10 6 atoms/cm 3 with a velocity resolution of 600 m/sec (0.1 eV) have been achieved. Techniques for exciting plasma particles (H,D) will also be discussed

Orbit effects on impurity transport in a rotating plasma

International Nuclear Information System (INIS)

Wong, K.L.; Cheng, C.Z.

1988-01-01

In 1985, very high ion temperature plasmas were first produced in TFTR with co-injecting neutral beams in low current, low density plasmas. This mode of operation is called the energetic ion mode in which the plasma rotates at very high speed. It was found that heavy impurities injected into these plasmas diffused out very quickly. In this paper, the authors calculate the impurity ion orbits in a rotating tokamak plasma based on the equation of motion in the frame that rotates with the plasma. It is shown that heavy particles in a rotating plasma can drift away from magnetic surfaces significantly faster. Particle orbits near the surface of a rotating tokamak are also analyzed. During impurity injection experiments, freshly ionized impurities near the plasma surface are essentially stationary in the laboratory frame and they are counter-rotating in the plasma frame with co-beam injection. The results are substantiated by numeral particle simulation. The computer code follows the impurity guiding center positions by integrating the equation of motion with the second order predictor-corrector method

Harmful situations, impure people: an attribution asymmetry across moral domains.

Science.gov (United States)

Chakroff, Alek; Young, Liane

2015-03-01

People make inferences about the actions of others, assessing whether an act is best explained by person-based versus situation-based accounts. Here we examine people's explanations for norm violations in different domains: harmful acts (e.g., assault) and impure acts (e.g., incest). Across four studies, we find evidence for an attribution asymmetry: people endorse more person-based attributions for impure versus harmful acts. This attribution asymmetry is partly explained by the abnormality of impure versus harmful acts, but not by differences in the moral wrongness or the statistical frequency of these acts. Finally, this asymmetry persists even when the situational factors that lead an agent to act impurely are stipulated. These results suggest that, relative to harmful acts, impure acts are linked to person-based attributions. Copyright © 2014 Elsevier B.V. All rights reserved.

Impurity strength and impurity domain modulated frequency-dependent linear and second non-linear response properties of doped quantum dots

Energy Technology Data Exchange (ETDEWEB)

Datta, Nirmal Kumar [Department of Physics, Suri Vidyasagar College, Suri, Birbhum 731 101, West Bengal (India); Ghosh, Manas [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)

2011-08-15

We explore the pattern of frequency-dependent linear and second non-linear optical responses of repulsive impurity doped quantum dots harmonically confined in two dimensions. The dopant impurity potential chosen assumes a Gaussian form and it is doped into an on-center location. The quantum dot is subject to a periodically oscillating external electric field. For some fixed values of transverse magnetic field strength ({omega}{sub c}) and harmonic confinement potential ({omega}{sub 0}), the influence of impurity strength (V{sub 0}) and impurity domain ({xi}) on the diagonal components of the frequency-dependent linear ({alpha}{sub xx} and {alpha}{sub yy}) and second non-linear ({gamma}{sub xxxx} and {gamma}{sub yyyy}) responses of the dot are computed through a linear variational route. The investigations reveal that the optical responses undergo enhancement with increase in both V{sub 0} and {xi} values. However, in the limitingly small dopant strength regime one observes a drop in the optical responses with increase in V{sub 0}. A time-average rate of energy transfer to the system is often invoked to support the findings. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Identification and Structural Characterization of Unidentified Impurity in Bisoprolol Film-Coated Tablets

Directory of Open Access Journals (Sweden)

Ivana Mitrevska

2017-01-01

Full Text Available The aim of this study is the identification, structural characterization, and qualification of a degradation impurity of bisoprolol labeled as Impurity RRT 0.95. This degradation product is considered as a principal thermal degradation impurity identified in bisoprolol film-coated tablets. The impurity has been observed in the stress thermal degradation study of the drug product. Using HPLC/DAD/ESI-MS method, a tentative structure was assigned and afterwards confirmed by detailed structural characterization using NMR spectroscopy. The structure of the target Impurity RRT 0.95 was elucidated as phosphomonoester of bisoprolol, having relative molecular mass of 406 (positive ionization mode. The structural characterization was followed by qualification of Impurity RRT 0.95 using several different in silico methodologies. From the results obtained, it can be concluded that no new structural alerts have been generated for Impurity RRT 0.95 relative to the parent compound bisoprolol. The current study presents an in-depth analysis of the full characterization and qualification of an unidentified impurity in a drug product with the purpose of properly defining the quality specification of the product.

Increased alpha-band power during the retention of shapes and shape-location associations in visual short-term memory

Directory of Open Access Journals (Sweden)

Jeffrey S. Johnson

2011-06-01

Full Text Available Studies exploring the role of neural oscillations in cognition have revealed sustained increases in alpha-band (~8-14 Hz power during the delay period of delayed-recognition short-term memory tasks. These increases have been proposed to reflect the inhibition, for example, of cortical areas representing task-irrelevant information, or of potentially interfering representations from previous trials. Another possibility, however, is that elevated delay-period alpha-band power reflects the selection and maintenance of information, rather than, or in addition to, the inhibition of task-irrelevant information. In the present study, we explored these possibilities using a delayed-recognition paradigm in which the presence and task-relevance of shape information was systematically manipulated across trial blocks and EEG was used to measure alpha-band power. In the first trial block, participants remembered locations marked by identical black circles. The second block featured the same instructions, but locations were marked by unique shapes. The third block featured the same stimulus presentation as the second, but with pretrial instructions indicating, on a trial-by-trial basis, whether memory for shape or location was required, the other dimension being irrelevant. In the final block, participants remembered the unique pairing of shape and location for each stimulus. Results revealed minimal delay-period alpha-band power in each of the location-memory conditions, whether locations were marked with identical circles or with unique task-irrelevant shapes. In contrast, alpha-band power increases were observed in both the shape-memory condition, in which location was task irrelevant, and in the critical final condition, in which both shape and location were task relevant. These results provide support for the proposal that alpha-band oscillations reflect the retention of shape information and/or shape-location associations in short-term memory.

Characterization of intermittency of impurity turbulent transport in tokamak edge plasmas

International Nuclear Information System (INIS)

Futatani, S.; Benkadda, S.; Nakamura, Y.; Kondo, K.

2008-01-01

The statistical properties of impurity transport of a tokamak edge plasma embedded in a dissipative drift-wave turbulence are investigated using structure function analysis. The impurities are considered as a passive scalar advected by the plasma flow. Two cases of impurity advection are studied and compared: A decaying impurities case (given by a diffusion-advection equation) and a driven case (forced by a mean scalar gradient). The use of extended self-similarity enables us to show that the relative scaling exponent of structure functions of impurity density and vorticity exhibit similar multifractal scaling in the decaying case and follows the She-Leveque model. However, this property is invalidated for the impurity driven advection case. For both cases, potential fluctuations are self-similar and exhibit a monofractal scaling in agreement with Kolmogorov-Kraichnan theory for two-dimensional turbulence. These results obtained with a passive scalar model agree also with test-particle simulations.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Negative compressibility observed in graphene containing resonant impurities

International Nuclear Information System (INIS)

Chen, X. L.; Wang, L.; Li, W.; Wang, Y.; He, Y. H.; Wu, Z. F.; Han, Y.; Zhang, M. W.; Xiong, W.; Wang, N.

2013-01-01

We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ±0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

Modeling of impurity transport in the core plasma

International Nuclear Information System (INIS)

Hulse, R.A.

1992-01-01

This paper presents a brief overview of computer modeling of impurity transport in the core region of controlled thermonuclear fusion plasmas. The atomic processes of importance in these high temperature plasmas and the numerical formulation of the model are described. Selected modeling examples are then used to highlight some features of the physics of impurity behavior in large tokamak fusion devices, with an emphasis on demonstrating the sensitivity of such modeling to uncertainties in the rate coefficients used for the atomic processes. This leads to a discussion of current requirements and opportunities for generating the improved sets of comprehensive atomic data needed to support present and future fusion impurity modeling studies

Electronic structure of deep impurity centers in silicon

International Nuclear Information System (INIS)

Oosten, A.B. van.

1989-01-01

This thesis reports an experimental study of deep level impurity centers in silicon, with much attention for theoretical interpretation of the data. A detailed picture of the electronic structure of several centers was obtained by magnetic resonance techniques, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and field scanned ENDOR (FSE). The thesis consists of two parts. The first part deals with chalcogen (sulfur, selenium and tellurium) related impurities, which are mostly double donors. The second part is about late transition metal (nickel, palladium and platinum) impurities, which are single (Pd,Pt) or double (Ni) acceptor centers. (author). 155 refs.; 51 figs.; 23 tabs

Tokamak impurity-control techniques

International Nuclear Information System (INIS)

Schmidt, J.A.

1980-01-01

A brief review is given of the impurity-control functions in tokamaks, their relative merits and disadvantages and some prominent edge-interaction-control techniques, and there is a discussion of a new proposal, the particle scraper, and its potential advantages. (author)

Sodium sampling and impurities determination

International Nuclear Information System (INIS)

Docekal, J.; Kovar, C.; Stuchlik, S.

1980-01-01

Samples may be obtained from tubes in-built in the sodium facility and further processed or they are taken into crucibles, stored and processed later. Another sampling method is a method involving vacuum distillation of sodium, thus concentrating impurities. Oxygen is determined by malgamation, distillation or vanadium balance methods. Hydrogen is determined by the metal diaphragm extraction, direct extraction or amalgamation methods. Carbon is determined using dry techniques involving burning a sodium sample at 1100 degC or using wet techniques by dissolving the sample with an acid. Trace amounts of metal impurities are determined after dissolving sodium in ethanol. The trace metals are concentrated and sodium excess is removed. (M.S.)

Influence of the impurity-defect and impurity-impurity interactions on the crystalline silicon solar cells conversion efficiency; Influence des interactions impurete-defaut et impurete-impurete sur le rendement de conversion des cellules photovoltaiques au silicium cristallin

Energy Technology Data Exchange (ETDEWEB)

Dubois, S

2007-05-15

This study aims at understanding the influence of the impurity - defect interaction on the silicon solar cell performances. We studied first the case of single-crystalline silicon. We combined numerical simulations and experimental data providing new knowledge concerning metal impurities in silicon, to quantify the evolution of the conversion efficiency with the impurity concentration. Mainly due to the gettering effects, iron appears to be quite well tolerated. It is not the case for gold, diffusing too slowly. Hydrogenation effects were limited. We transposed then this study toward multi-crystalline silicon. Iron seems rather well tolerated, due to the gettering effects but also due to the efficiency of the hydrogenation. When slow diffusers are present, multi crystalline silicon is sensitive to thermal degradation. n-type silicon could solve this problem, this material being less sensitive to metal impurities. (author)

Impurity states in two - and three-dimensional disordered systems

International Nuclear Information System (INIS)

Silva, A.F. da; Fabbri, M.

1984-01-01

We investigate the microscopic structure of the impurity states in two-and three-dimensional (2D and 3d) disordered systems. A cluster model is outlined for the donor impurity density of states (DIDS) of doped semiconductors. It is shown that the impurity states are very sensitive to a change in the dimensionality of the system, i.e from 3D to 2D system. It is found that all eigenstates become localized in 2D disordered system for a large range of concentration. (Author) [pt

Extraction process for removing metallic impurities from alkalide metals

Science.gov (United States)

Royer, Lamar T.

1988-01-01

A development is described for removing metallic impurities from alkali metals by employing an extraction process wherein the metallic impurities are extracted from a molten alkali metal into molten lithium metal due to the immiscibility of the alkali metals in lithium and the miscibility of the metallic contaminants or impurities in the lithium. The purified alkali metal may be readily separated from the contaminant-containing lithium metal by simple decanting due to the differences in densities and melting temperatures of the alkali metals as compared to lithium.

Impurity states in two-and three-dimensional disordered systems

International Nuclear Information System (INIS)

Silva, A.F. da; Fabbri, M.

1984-04-01

The microscopic structure of the impurity states in two-and three-dimensional (2D and 3D) disordered systems is investigated. A cluster model is outlined for the donor impurity density of states (DIDS) of doped semiconductors. It is shown that the impurity states are very sensitive to a change in the dimensionality of the system, i.e., from 3D to 2D system. It is found that all eigenstates become localized in 2D disordered system for a large range of concentration. (Author) [pt

Effect of HEH[EHP] impurities on the ALSEP solvent extraction process

Energy Technology Data Exchange (ETDEWEB)

Holfeltz, Vanessa E. [Nuclear Chemistry and Engineering Group, Pacific Northwest National Laboratory, Richland, WA, USA; School of Nuclear Science and Engineering, Oregon State University, Corvallis, OR, USA; Campbell, Emily L. [Nuclear Chemistry and Engineering Group, Pacific Northwest National Laboratory, Richland, WA, USA; Peterman, Dean R. [Aqueous Separations and Radiochemistry Department, Idaho National Laboratory, Idaho Falls, ID, USA; Standaert, Robert F. [Biosciences Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA; Department of Biochemistry & amp, Cellular and Molecular Biology, University of Tennessee, Knoxville, TN, USA; Biology & amp, Soft Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA; Shull Wollan Center — a Joint Institute for Neutron Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA; Paulenova, Alena [School of Nuclear Science and Engineering, Oregon State University, Corvallis, OR, USA; Lumetta, Gregg J. [Nuclear Chemistry and Engineering Group, Pacific Northwest National Laboratory, Richland, WA, USA; Levitskaia, Tatiana G. [Nuclear Chemistry and Engineering Group, Pacific Northwest National Laboratory, Richland, WA, USA

2017-12-20

In solvent extraction processes, organic phase impurities can negatively impact separation factors, hydrolytic performance, and overall system robustness. This affects the process-level viability of a separation concept and necessitates knowledge of the behavior and mechanisms to control impurities in the solvent. The most widespread way through which impurities are introduced into a system is through impure extractants and/or diluents used to prepare the solvent, and often development of new purification schemes to achieve the desired level of purity is needed. In this work, the acidic extractant, 2-ethylhexylphosphonic acid mono-2-ethylhexyl ester (HEH[EHP])—proposed for application in extractive processes aimed at separating trivalent minor actinides from lanthanides and other fission products—is characterized with respect to its common impurities and their impact on Am(III) stripping in the Actinide Lanthanide SEParation (ALSEP) system. To control impurities in HEH[EHP], existing purification technologies commonly applied for the acidic organophosphorus reagents are reviewed, and a new method specific to HEH[EHP] purification is presented.

Tight-Binding Description of Impurity States in Semiconductors

Science.gov (United States)

Dominguez-Adame, F.

2012-01-01

Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calculate the energy of carriers bound to donors or acceptors in semiconductors. This model treats the pure semiconductor as a homogeneous medium and the impurity is represented as a fixed point charge. This approach is only valid for shallow impurities…

BWR water chemistry impurity studies

International Nuclear Information System (INIS)

Ljungberg, L.G.; Korhonen, S.; Renstroem, K.; Hofling, C.G.; Rebensdorff, B.

1990-03-01

Laboratory studies were made on the effect of water impurities on environmental cracking in simulated BWR water of stainless steel, low alloy steel and nickel-base alloys. Constant elongation rate tensile (CERT) tests were run in simulated normal water chemistry (NWC), hydrogen water chemistry (HWC), or start-up environment. Sulfate, chloride and copper with chloride added to the water at levels of a fraction of a ppM were found to be extremely deleterious to all kinds of materials except Type 316 NG. Other detrimental impurities were fluoride, silica and some organic acids, although acetic acid was beneficial. Nitrate and carbon dioxide were fairly inoccuous. Corrosion fatigue and constant load tests on compact tension specimens were run in simulated normal BWR water chemistry (NWC) or hydrogen water chemistry (HWC), without impurities or with added sulfate or carbon dioxide. For sensitized Type 304 SS in NWC, 0.1 ppM sulfate increased crack propagation rates in constant load tests by up to a factor of 100, and in fatigue tests up to a factor of 10. Also, cracking in Type 316 nuclear grade SS and Alloy 600 was enhanced, but to a smaller degree. Carbon dioxide was less detrimental than sulfate. 3 figs., 4 tabs

Broadband sound blocking in phononic crystals with rotationally symmetric inclusions.

Science.gov (United States)

Lee, Joong Seok; Yoo, Sungmin; Ahn, Young Kwan; Kim, Yoon Young

2015-09-01

This paper investigates the feasibility of broadband sound blocking with rotationally symmetric extensible inclusions introduced in phononic crystals. By varying the size of four equally shaped inclusions gradually, the phononic crystal experiences remarkable changes in its band-stop properties, such as shifting/widening of multiple Bragg bandgaps and evolution to resonance gaps. Necessary extensions of the inclusions to block sound effectively can be determined for given incident frequencies by evaluating power transmission characteristics. By arraying finite dissimilar unit cells, the resulting phononic crystal exhibits broadband sound blocking from combinational effects of multiple Bragg scattering and local resonances even with small-numbered cells.

STM tunneling through a quantum wire with a side-attached impurity

International Nuclear Information System (INIS)

Kwapinski, T.; Krawiec, M.; Jalochowski, M.

2008-01-01

The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the non-equilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itself and the way it is coupled to the wire strongly influence the STM tunneling, the density of states and differential conductance

Effects of impurities on crystal growth in fructose crystallization

Science.gov (United States)

Chu, Y. D.; Shiau, L. D.; Berglund, K. A.

1989-10-01

The influence of impurities on the crystallization of anhydrous fructose from aqueous solution was studied. The growth kinetics of fructose crystals in the fructose-water-glucose and fructose-water-difructose dianhydrides systems were investigated using photomicroscopic contact nucleation techniques. Glucose is the major impurity likely to be present in fructose syrup formed during corn wet milling, while several difructose dianhydrides are formed in situ under crystallization conditions and have been proposed as a cause in the decrease of overall yields. Both sets of impurities were found to cause inhibition of crystal growth, but the mechanisms responsible in each case are different. It was found that the presence of glucose increases the solubility of fructose in water and thus lowers the supersaturation of the solution. This is probably the main effect responsible for the decrease of crystal growth. Since the molecular structures of difructose dianhydrides are similar to that of fructose, they are probably "tailor-made" impurities. The decrease of crystal growth is probably caused by the incorporation of these impurities into or adsorption to the crystal surface which would accept fructose molecules in the orientation that existed in the difructose dianhydride.

Spectroscopic Measurements of Impurity Spectra on the EAST Tokamak

International Nuclear Information System (INIS)

Fu Jia; Li Yingying; Shi Yuejiang; Wang Fudi; Zhang Wei; Lv Bo; Huang Juan; Wan Baonian; Zhou Qian

2012-01-01

Ultraviolet (UV) and visible impurity spectra (200∼750 nm) are commonly used to study plasma and wall interactions in magnetic fusion plasmas. Two optical multi-channel analysis (OMA) systems have been installed for the UV-visible spectrum measurement on EAST. These two OMA systems are both equipped with the Czerny-Turner (C-T) type spectrometer. The upper vacuum vessel and inner divertor baffle can be viewed simultaneously through two optical lenses. The OMA1 system is mainly used for multi-impurity lines radiation measurement. A 280 nm wavelength range can be covered by a 300 mm focal length spectrometer equipped with a 300 grooves/mm grating. The Dα/Hα line shapes can be resolved by the OMA2 system. The focal length is 750 mm. The spectral resolution can be up to 0.01 nm using a 1800 grooves/mm grating. The impurity behaviour and hydrogen ratio evolution after boroniztion, lithium coating, and siliconization are compared. Lithium coating has shown beneficial effects on the reduction of edge recycling and low Z impurity (C, O) influx. The impurity expelling effect of the divertor configuration is also briefly discussed through multi-channels observation of OMA1 system. (magnetically confined plasma)

The effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity

Science.gov (United States)

Owji, Erfan; Keshavarz, Alireza; Mokhtari, Hosein

2016-10-01

In this paper, the effects of temperature, hydrostatic pressure and size on optical gain for GaAs spherical quantum dot laser with hydrogen impurity are investigated. For this purpose, the effects of temperature, pressure and quantum dot size on the band gap energy, effective mass, and dielectric constant are studied. The eigenenergies and eigenstates for valence and conduction band are calculated by using Runge-Kutta numerical method. Results show that changes in the temperature, pressure and size lead to the alteration of the band gap energy and effective mass. Also, increasing the temperature redshifts the optical gain peak and at special temperature ranges lead to increasing or decreasing of it. Further, by reducing the size, temperature-dependent of optical gain is decreased. Additionally, enhancing of the hydrostatic pressure blueshifts the peak of optical gain, and its behavior as a function of pressure which depends on the size. Finally, increasing the radius rises the redshifts of the peak of optical gain.

Impurity production and transport at the JET belt limiter

International Nuclear Information System (INIS)

Pitcher, C.S.; McCracken, G.M.; Strangeby, P.C.; Toronto Univ., ON; Summers, D.D.R.

1989-01-01

Under certain operating conditions in JET the impurity content of the discharge can be high, thus reducing the fusion reaction rate through the dilution of the hydrogenic fuel. The dilution in most discharges is predominantly due to carbon impurities. In order to understand how carbon impurities are produced and transported into the plasma, detailed measurements with interference filters centered on intense spectral lines of the low ionization states of carbon (C I, C II, C III) as well as the fuel species (Dα) and helium (He I). (author) 6 refs., 4 figs

Hopping conductivity via deep impurity states in InP

International Nuclear Information System (INIS)

Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

1984-01-01

Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

The impact of impurities on long-term PEMFC performance

Energy Technology Data Exchange (ETDEWEB)

Garzon, Fernando H [Los Alamos National Laboratory; Lopes, Thiago [Los Alamos National Laboratory; Rockward, Tommy [Los Alamos National Laboratory; Mukundan, Rangachary [Los Alamos National Laboratory; Sansinena, Jose - Maria [Los Alamos National Laboratory; Kienitz, Brian [LLNL

2009-06-23

Electrochemical experimentation and modeling indicates that impurities degrade fuel cell performance by a variety of mechanisms. Electrokinetics may be inhibited by catalytic site poisoning from sulfur compounds and CO and by decreased local proton activity and mobility caused by the presence of foreign salt cations or ammonia. Cation impurity profiles vary with current density, valence and may change local conductivity and water concentrations in the ionomer. Nitrogen oxides and ammonia species may be electrochemically active under fuel cell operating conditions. The primary impurity removal mechanisms are electrooxidation and water fluxes through the fuel cell.

Behavior of arsenic impurity at antimony electric precipitation

International Nuclear Information System (INIS)

Kim, G.N.; Rakhmanov, A.

2001-01-01

In the paper the arsenic impurity electrochemical behavior and it purification from antimony by electric precipitation out of fluoride solutions was studied. For this the arsenic sample with mass 0.003-0.006 g has been irradiated at the WWR-SM nuclear reactor during 3-5 hour in the thermal neutron flux 10 13 n/cm 2 s, after 24 h keeping the sample has being dissolved in the concentrated nitric acid, and then it has been evaporated several times with distillation water addition up to wet precipitation state. It is shown, that arsenic impurity behavior character in the antimony electric precipitation out to fluoride electrolyte depends on the electrolyte content, electrolysis conditions, arsenic valency state in arsenic impurity existence in the five-valency state its joint electric reduction with antimony is practically not observing. In the case the arsenic being in three-valency state, it joint electric reduction with antimony is taking place. In this time the electrolytic antimony contents arsenic impurities less in dozen time than initial material

Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation

Directory of Open Access Journals (Sweden)

Budzulyak S. I.

2014-08-01

Full Text Available High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over crystal. It is known that low-dose microwave irradiation can homogenize impurity distribution in a specimen. In the present work, we made an attempt to improve the detector material quality by using such post-technological treatment, as well as to study state variation for impurity-defect complexes. To this end, the effect of microwave irradiation on transformation of impurity-defect complexes in CdTe:Cl single crystals was investigated using low-temperature photoluminescence. It is shown that activation of ClTe donor centers by microwave irradiation for 10 s and presence of VCd acceptor centers in the specimens under investigation effectively facilitate formation of (VNd–ClTe defect centers at which excitons are bound. Detailed investigations of the band form for donor-acceptor pairs (DAPs in CdTe:Cl single crystals made it possible to determine the Huang—Rhys factor (that characterizes electron-phonon interaction in CdTe:Cl DAPs as a function of microwave treatment duration. It is shown for single crystals with NCl = 5·1017 cm–3 and 5·1019 cm–3 that the Huang—Rhys factor grows with microwave irradiation dose. This is related to both homogenization of donor and acceptor centers distribution and increase of donor—acceptor spacing. It is shown that microwave irradiation of CdTe:Cl single crystals results in concentration reduction for separate cadmium vacancies VCd because of formation of (VNd—ClTe defect centers at which excitons are bound.

Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

Energy Technology Data Exchange (ETDEWEB)

Skinner, B.; Chen, T.; Shklovskii, B. I., E-mail: shklovsk@physics.spa.umn.edu [University of Minnesota, Fine Theoretical Physics Institute (United States)

2013-09-15

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

International Nuclear Information System (INIS)

Skinner, B.; Chen, T.; Shklovskii, B. I.

2013-01-01

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states

The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

International Nuclear Information System (INIS)

Sah, C.-T.; Jie Binbin

2009-01-01

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

Quenching of overcompensated Kondo impurities via channel asymmetry

International Nuclear Information System (INIS)

Schlottmann, P.; Lee, K.

1996-01-01

We consider a spin-1/2 impurity interacting with conduction electrons in two different orbital channels via an isotropic spin exchange. The exchange is the same for both channels, but a crystalline field breaks the symmetry between the orbital channels. This corresponds to a splitting of the conduction electron Γ 8 into two doublets in the quadrupolar Kondo effect and to the application of an external magnetic field in the electron assisted tunneling of an atom in a double-well potential. We study the ground-state properties of the impurity as a function of the magnetic and crystalline fields. The crystalline field quenches the critical behavior of the overcompensated fixed point: The impurity ground state is a singlet. (orig.)

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

A one-dimensional plasma and impurity transport model for reversed field pinches

International Nuclear Information System (INIS)

Veerasingam, R.

1991-11-01

In this thesis a one-dimensional (1-D) plasma and impurity transport model is developed to address issues related to impurity behavior in Reversed Field Pinch (RFP) fusion plasmas. A coronal non-equilibrium model is used for impurities. The impurity model is incorporated into an existing one dimensional plasma transport model creating a multi-species plasma transport model which treats the plasma and impurity evolution self-consistently. Neutral deuterium particles are treated using a one-dimensional (slab) model of neutral transport. The resulting mode, RFPBI, is then applied to existing RFP devices such as ZT-40M and MST, and also to examine steady state behavior of ZTH based on the design parameters. A parallel algorithm for the impurity transport equations is implemented and tested to determine speedup and efficiency

Computers in the investigation of the impurity content of high-purity materials

International Nuclear Information System (INIS)

Makarov, Yu.B.; Yan'kov, S.V.

1987-01-01

The efficiency of the concept of data banks for the accumulation and processing of information is now generally acknowledged. In scientific investigations not only bibliographic but also factual data banks are becoming more and more prevalent. In this article, the authors consider the possibilities of providing a data bank on high-purity materials for the study of impurity contents. Also in this paper, the authors distinguish the following groups of problems that arise in the study of impurity composition and presents examples of their proposed solutions to these problems: the analysis of error and the determination of the most probably value of impurity concentration; the estimation of average properties of impurity composition with respect to groups of impurities and samples, and the forecast of the complete impurity composition

Summary of IAEA technical committee meeting on impurity control

International Nuclear Information System (INIS)

Itoh, Kimitaka.

1989-03-01

Presentations given in the IAEA technical committee meeting on impurity control (held in JAERI from 13 to 15 February, 1989) are summarized, putting the emphasis on the physics modelling of the plasma related to the impurity production and confinement. (author)

Purification of simple substances by distillation with impurity hydrothermal oxidation

International Nuclear Information System (INIS)

Kalashnik, O.N.; Nisel'son, L.A.

1987-01-01

A possibility of applying distillation method in water vapours for purification of simple substances from impurities is studied. Based on thermodynamic analysis of interaction processes in E-H 2 O system, conducted using a computer, it is as certained that SS, Se, Te, As, Cd, Hg can be purified from the majority of the impurities analysed by distillation in a water vapour flow. Behaviour of Zn, C, Ge, Al, Sb characteristic impurities under cadmium, arsenic and tellurium distillation is studied. Experiments on cadmium, arsenic and tellurium purification have confirmed, that distillation with hydrothermal oxidation of Zn, C, Ge impurities sometimes appears to be a more effective method as compared to distillation in a hydrogen flow

Impurity sublattice localization in ZnO revealed by li marker diffusion

DEFF Research Database (Denmark)

Azarov, A.Yu.; Knutsen, K.E.; Neuvonen, P.T.

2013-01-01

Sublattice localization of impurities in compound semiconductors, e.g., ZnO, determines their electronic and optical action. Despite that the impurity position may be envisaged based on charge considerations, the actual localization is often unknown, limiting our understanding of the incorporation...... and possible doping mechanisms. In this study, we demonstrate that the preferential sublattice occupation for a number of impurities in ZnO can be revealed by monitoring Li diffusion. In particular, using ion implantation, the impurity incorporation into the Zn sublattice (holds for, B, Mg, P, Ag, Cd, and Sb...

Device for separating, purifying and recovering nuclear fuel material, impurities and materials from impurity-containing nuclear fuel materials or nuclear fuel containing material

International Nuclear Information System (INIS)

Sato, Ryuichi; Kamei, Yoshinobu; Watanabe, Tsuneo; Tanaka, Shigeru.

1988-01-01

Purpose: To separate, purify and recover nuclear fuel materials, impurities and materials with no formation of liquid wastes. Constitution: Oxidizing atmosphere gases are introduced from both ends of a heating furnace. Vessels containing impurity-containing nuclear fuel substances or nuclear fuel substance-containing material are continuously disposed movably from one end to the other of the heating furnace. Then, impurity oxides or material oxides selectively evaporated from the impurity-containing nuclear fuel substances or nuclear fuel substance-containing materials are entrained in the oxidizing atmosphere gas and the gases are led out externally from a discharge port opened at the intermediate portion of the heating furnace, filters are disposed to the exit to solidify and capture the nuclear fuel substances and traps are disposed behind the filters to solidify and capture the oxides by spontaneous air cooling or water cooling. (Sekiya, K.)

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

Science.gov (United States)

Vonroos, O. H.

1982-01-01

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

Comparison of eigensolvers for symmetric band matrices.

Science.gov (United States)

Moldaschl, Michael; Gansterer, Wilfried N

2014-09-15

We compare different algorithms for computing eigenvalues and eigenvectors of a symmetric band matrix across a wide range of synthetic test problems. Of particular interest is a comparison of state-of-the-art tridiagonalization-based methods as implemented in Lapack or Plasma on the one hand, and the block divide-and-conquer (BD&C) algorithm as well as the block twisted factorization (BTF) method on the other hand. The BD&C algorithm does not require tridiagonalization of the original band matrix at all, and the current version of the BTF method tridiagonalizes the original band matrix only for computing the eigenvalues. Avoiding the tridiagonalization process sidesteps the cost of backtransformation of the eigenvectors. Beyond that, we discovered another disadvantage of the backtransformation process for band matrices: In several scenarios, a lot of gradual underflow is observed in the (optional) accumulation of the transformation matrix and in the (obligatory) backtransformation step. According to the IEEE 754 standard for floating-point arithmetic, this implies many operations with subnormal (denormalized) numbers, which causes severe slowdowns compared to the other algorithms without backtransformation of the eigenvectors. We illustrate that in these cases the performance of existing methods from Lapack and Plasma reaches a competitive level only if subnormal numbers are disabled (and thus the IEEE standard is violated). Overall, our performance studies illustrate that if the problem size is large enough relative to the bandwidth, BD&C tends to achieve the highest performance of all methods if the spectrum to be computed is clustered. For test problems with well separated eigenvalues, the BTF method tends to become the fastest algorithm with growing problem size.

Helium impurities in a PNP-primary coolant circuit

International Nuclear Information System (INIS)

Reif, M.

1981-01-01

The concentration of impurities to be expected have been defined in consideration of recent findings concerning the rates of infiltration and formation and the reaction mechanisms of the impurity components in the circuit. The data obtained correspond with the requirements on the metallic high-temperature components as well as with the requirements of limited graphite corrosion. (DG) [de

Determining factors for the presence of impurities in selectively collected biowaste.

Science.gov (United States)

Puig-Ventosa, Ignasi; Freire-González, Jaume; Jofra-Sora, Marta

2013-05-01

The presence of impurities in biodegradable waste (biowaste) causes problems with the management of waste, among which are additional costs derived from the need to improve pre-treatment of biowaste, loss of treatment capacity and the difficulty selling treated biowaste as compost owing to its low quality. When treated biowaste is used for soil conditioning it can also cause soil pollution. Understanding the reasons why impurities are in biowaste and the factors affecting the percentage of impurities present can be used to determine ways to minimise these negative effects. This article attempts to identify the main causes for the presence of impurities in biowaste. In order to do so, it carries out an empirical analysis of the level of impurities in biowaste from municipal waste collection in two steps. First, a bivariate analysis focuses on significant correlations between the presence of impurities and several variables. Second, the construction of an explanatory model based on the significant relations obtained in the first step, and on literature research, are used to check the stated hypothesis. The estimates demonstrate that the collection system, the global levels of separate collection, the urban density of the municipality and the requirement to use compostable bags may be the main drivers of impurity levels in biowaste.

Understanding of impurity behavior in SST-1 plasmas using visible spectroscopy

International Nuclear Information System (INIS)

Manchanda, Ranjana; Ramaiya, Nilam; Chowdhuri, Malay Bikas; Banerjee, Santanu; Ghosh, Joydeep

2015-01-01

Studies of impurity behavior in SST-1 plasma have been carried out using visible spectroscopic systems installed on the tokomak. This has been carried out using a low resolution and broadband survey spectrometer covering a 350-900 nm wavelength range, 0.5 m visible spectrometer having 600 and 1200 grooves/mm grating coupled with CCD camera and interference filter and photomultiplier (PMT) tube based systems. Temporal evolution of the hydrogen (H α , H β ) and impurities emissions like, C II, C III, O I, O II, O III, O V and a visible Continuum at 536.0 nm have been monitored using the PMT based system to understand impurity charge state evolution during plasma discharges. All systems are absolutely calibrated for impurity influx and plasma parameter estimations. Observed spectral lines in the visible range have been identified to recognize the presence of various impurities in the SST-1 plasmas. Comparison of impurities emission has been made for different plasma currents and toroidal magnetic fields. An analysis has been carried out to understand the impurities activities in plasmas of SST-1 tokomak in presence and absence of installed plasma facing components (PFC). Significantly higher carbon emissions have been observed indicating higher carbon content in the plasma with graphite PFCs installed. (author)

Quasiparticle Properties of a Mobile Impurity in a Bose-Einstein Condensate.

Science.gov (United States)

Christensen, Rasmus Søgaard; Levinsen, Jesper; Bruun, Georg M

2015-10-16

We develop a systematic perturbation theory for the quasiparticle properties of a single impurity immersed in a Bose-Einstein condensate. Analytical results are derived for the impurity energy, effective mass, and residue to third order in the impurity-boson scattering length. The energy is shown to depend logarithmically on the scattering length to third order, whereas the residue and the effective mass are given by analytical power series. When the boson-boson scattering length equals the boson-impurity scattering length, the energy has the same structure as that of a weakly interacting Bose gas, including terms of the Lee-Huang-Yang and fourth order logarithmic form. Our results, which cannot be obtained within the canonical Fröhlich model of an impurity interacting with phonons, provide valuable benchmarks for many-body theories and for experiments.

Parametric dependences of impurity transport in the Tore Supra tokamak

International Nuclear Information System (INIS)

Parisot, Th.

2007-09-01

During this Ph.D. work, a full setup of tools for an experimental investigation of impurity transport has been developed on the Tore Supra tokamak. It includes a laser blow-off system for metallic impurity injections and developments for ITC (Impurity Transport Code), a transport code which allows the extraction of the experimental impurity transport coefficients (diffusion and convection velocity). This tool has been used to perform and analyse several experiments, to evidence parametric dependences of impurity transport. In a first experiment, a confinement time law for nickel in Tore Supra has been obtained as a function of collisionality ν * and normalized Larmor radius ρ * . Then the impurity charge Z role has been investigated in various conditions: ohmic regime with or without sawteeth, and sawtooth less L-mode with LH power. No Z effect is observed, consistently with theoretical predictions, whether neoclassical (NCLASS) or for turbulent transport with both non linear gyro-fluid (TRB) and quasilinear gyrokinetic (QuaLiKiz) simulations. An exception is found for LH heated plasmas where the confinement time seems to decrease for the heaviest impurities. This is not explained by any model available. The observed transport is close to neoclassical between sawtooth relaxations, in the centre (r q-1 ) of ohmic plasmas, turbulent outside. Without sawteeth, it is turbulent in the whole plasma, for ohmic or L mode discharges. The profile shape of the diffusion coefficient is here qualitatively different, with a stronger and deeper transition between the low diffusion central region and a more turbulent peripheral region for LH heated plasmas. (author)

Organic impurity profiling of 3,4-methylenedioxymethamphetamine (MDMA) synthesised from catechol.

Science.gov (United States)

Heather, Erin; Shimmon, Ronald; McDonagh, Andrew M

2015-03-01

This work examines the organic impurity profile of 3,4-methylenedioxymethamphetamine (MDMA) that has been synthesised from catechol (1,2-dihydroxybenzene), a common chemical reagent available in industrial quantities. The synthesis of MDMA from catechol proceeded via the common MDMA precursor safrole. Methylenation of catechol yielded 1,3-benzodioxole, which was brominated and then reacted with magnesium allyl bromide to form safrole. Eight organic impurities were identified in the synthetic safrole. Safrole was then converted to 3,4-methylenedioxyphenyl-2-propanone (MDP2P) using two synthetic methods: Wacker oxidation (Route 1) and an isomerisation/peracid oxidation/acid dehydration method (Route 2). MDMA was then synthesised by reductive amination of MDP2P. Thirteen organic impurities were identified in MDMA synthesised via Route 1 and eleven organic impurities were identified in MDMA synthesised via Route 2. Overall, organic impurities in MDMA prepared from catechol indicated that synthetic safrole was used in the synthesis. The impurities also indicated which of the two synthetic routes was utilised. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Classical confinement and outward convection of impurity ions in the MST RFP

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. T. A.; Den Hartog, D. J.; Mirnov, V. V.; Eilerman, S.; Nornberg, M.; Reusch, J. A.; Sarff, J. S. [Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Caspary, K. J.; Chapman, B. E.; Parke, E. [Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Magee, R. M. [Department of Physics, West Virginia University, Morgantown, WV 26506 (United States); Brower, D. L.; Ding, W. X.; Lin, L. [Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States); Craig, D. [Physics Department, Wheaton College, Wheaton, Illinois 60187 (United States); Fiksel, G. [Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Laboratory for Laser Energetics, University of Rochester, Rochester, New York (United States)

2012-05-15

Impurity ion dynamics measured with simultaneously high spatial and temporal resolution reveal classical ion transport in the reversed-field pinch. The boron, carbon, oxygen, and aluminum impurity ion density profiles are obtained in the Madison Symmetric Torus [R. N. Dexter et al., Fusion Technol. 19, 131 (1991)] using a fast, active charge-exchange-recombination-spectroscopy diagnostic. Measurements are made during improved-confinement plasmas obtained using inductive control of tearing instability to mitigate stochastic transport. At the onset of the transition to improved confinement, the impurity ion density profile becomes hollow, with a slow decay in the core region concurrent with an increase in the outer region, implying an outward convection of impurities. Impurity transport from Coulomb collisions in the reversed-field pinch is classical for all collisionality regimes, and analysis shows that the observed hollow profile and outward convection can be explained by the classical temperature screening mechanism. The profile agrees well with classical expectations. Experiments performed with impurity pellet injection provide further evidence for classical impurity ion confinement.

Spectroscopic impurity survey in Wendelstein 7-X

Energy Technology Data Exchange (ETDEWEB)

Buttenschoen, Birger; Burhenn, Rainer; Thomsen, Henning [Max-Planck-Institut fuer Plasmaphysik, Greifswald (Germany); Biel, Wolfgang; Assmann, Jochen; Hollfeld, Klaus-Peter [Forschungszentrum Juelich GmbH, Juelich (Germany); Collaboration: the Wendelstein 7-X Team

2016-07-01

The High Efficiency eXtreme ultraviolet Overview Spectrometer (HEXOS) has been developed specifically for impurity identification and survey purposes on the Wendelstein 7-X stellarator. This spectrometer system, consisting of four individual spectrometers, covers the wavelength range between λ=2.5 nm and λ=160 nm, observing the intense resonance lines of relevant Mg-, Na-, Be- and Li-like impurity ions as well as the high-Z W/Ta quasi-continua. During the first operation phase of W7-X, commissioning of HEXOS was finished by providing an in-situ wavelength calibration. The permanently acquired spectra are evaluated to monitor the overall impurity content in the plasma, and serve as an indicator for unintended plasma-wall contact possibly leading to machine damage. HEXOS results from the first operation phase of W7-X are presented and discussed with respect to future scientific exploitation of the available data.

Magnetic impurity coupled to interacting conduction electrons

International Nuclear Information System (INIS)

Schork, T.

1996-01-01

We consider a magnetic impurity which interacts by hybridization with a system of weakly correlated electrons and determine the energy of the ground state by means of a 1/N f expansion. The correlations among the conduction electrons are described by a Hubbard Hamiltonian and are treated to the lowest order in the interaction strength. We find that their effect on the Kondo temperature, T K , in the Kondo limit is twofold: first, the position of the impurity level is shifted due to the reduction of charge fluctuations, which reduces T K . Secondly, the bare Kondo exchange coupling is enhanced as spin fluctuations are enlarged. In total, T K increases. Both corrections require intermediate states beyond the standard Varma-Yafet ansatz. This shows that the Hubbard interaction does not just provide quasiparticles, which hybridize with the impurity, but also renormalizes the Kondo coupling. copyright 1996 The American Physical Society

Ground state energy and wave function of an off-centre donor in spherical core/shell nanostructures: Dielectric mismatch and impurity position effects

Energy Technology Data Exchange (ETDEWEB)

Ibral, Asmaa [Equipe d’Optique et Electronique du Solide, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, B.P. 20 El Jadida Principale, El Jadida 24000 (Morocco); Laboratoire d’Instrumentation, Mesure et Contrôle, Département de Physique, Université Chouaïb Doukkali, B.P. 20 El Jadida Principale, El Jadida (Morocco); Zouitine, Asmae [Département de Physique, Ecole Nationale Supérieure d’Enseignement Technique, Université Mohammed V Souissi, B.P. 6207 Rabat-Instituts, Rabat (Morocco); Assaid, El Mahdi, E-mail: eassaid@yahoo.fr [Equipe d’Optique et Electronique du Solide, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, B.P. 20 El Jadida Principale, El Jadida 24000 (Morocco); Laboratoire d’Instrumentation, Mesure et Contrôle, Département de Physique, Université Chouaïb Doukkali, B.P. 20 El Jadida Principale, El Jadida (Morocco); Feddi, El Mustapha [Département de Physique, Ecole Nationale Supérieure d’Enseignement Technique, Université Mohammed V Souissi, B.P. 6207 Rabat-Instituts, Rabat (Morocco); and others

2014-09-15

Ground state energy and wave function of a hydrogen-like off-centre donor impurity, confined anywhere in a ZnS/CdSe spherical core/shell nanostructure are determined in the framework of the envelope function approximation. Conduction band-edge alignment between core and shell of nanostructure is described by a finite height barrier. Dielectric constant mismatch at the surface where core and shell materials meet is taken into account. Electron effective mass mismatch at the inner surface between core and shell is considered. A trial wave function where coulomb attraction between electron and off-centre ionized donor is used to calculate ground state energy via the Ritz variational principle. The numerical approach developed enables access to the dependence of binding energy, coulomb correlation parameter, spatial extension and radial probability density with respect to core radius, shell radius and impurity position inside ZnS/CdSe core/shell nanostructure.

Ground state energy and wave function of an off-centre donor in spherical core/shell nanostructures: Dielectric mismatch and impurity position effects

International Nuclear Information System (INIS)

Ibral, Asmaa; Zouitine, Asmae; Assaid, El Mahdi; Feddi, El Mustapha

2014-01-01

Ground state energy and wave function of a hydrogen-like off-centre donor impurity, confined anywhere in a ZnS/CdSe spherical core/shell nanostructure are determined in the framework of the envelope function approximation. Conduction band-edge alignment between core and shell of nanostructure is described by a finite height barrier. Dielectric constant mismatch at the surface where core and shell materials meet is taken into account. Electron effective mass mismatch at the inner surface between core and shell is considered. A trial wave function where coulomb attraction between electron and off-centre ionized donor is used to calculate ground state energy via the Ritz variational principle. The numerical approach developed enables access to the dependence of binding energy, coulomb correlation parameter, spatial extension and radial probability density with respect to core radius, shell radius and impurity position inside ZnS/CdSe core/shell nanostructure

Influence of impurities on the surface morphology of the TIBr crystal semiconductor

International Nuclear Information System (INIS)

Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

2013-01-01

The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

Phase transition in one Josephson junction with a side-coupled magnetic impurity

Science.gov (United States)

Zhi, Li-Ming; Wang, Xiao-Qi; Jiang, Cui; Yi, Guang-Yu; Gong, Wei-Jiang

2018-04-01

This work focuses on one Josephson junction with a side-coupled magnetic impurity. And then, the Josephson phase transition is theoretically investigated, with the help of the exact diagonalization approach. It is found that even in the absence of intradot Coulomb interaction, the magnetic impurity can efficiently induce the phenomenon of Josephson phase transition, which is tightly related to the spin correlation manners (i.e., ferromagnetic or antiferromagnetic) between the impurity and the junction. Moreover, the impurity plays different roles when it couples to the dot and superconductor, respectively. This work can be helpful in describing the influence of one magnetic impurity on the supercurrent through the Josephson junction.

Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

International Nuclear Information System (INIS)

Pattammal, M.; Peter, A. John

2010-01-01

Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.

Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

Energy Technology Data Exchange (ETDEWEB)

Pattammal, M. [Dept.of Physics, Yadava College Coeducational Institute, Madurai 625 014 (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept.of Physics, Govt. Arts and Science College, Melur 625 106 (India)

2010-09-01

Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

International Nuclear Information System (INIS)

Londos, C. A.; Andrianakis, A.; Emtsev, V.; Ohyama, H.

2009-01-01

The annealing behavior of the oxygen and carbon impurities in Czochralski grown silicon (Cz-Si) was investigated in electron- and neutron-irradiated materials. The irradiated samples were subjected to isochronal anneals of up to ∼1000 deg. C, and the evolution of oxygen and carbon concentrations was monitored by means of infrared spectroscopy from the amplitudes of the 1106 and 605 cm -1 bands of the two impurities correspondingly. It was found that the electron irradiation does not affect the temperature of annealing of oxygen, although in the neutron-irradiated samples the oxygen band begins to decay in the spectra at a lower temperature than that in the nonirradiated samples. This behavior could be determined by supersaturation of vacancies mainly liberated from disordered regions in the latter material. This assists the oxygen aggregation process. Regarding carbon evolution, it was found that in the irradiated samples the annealing out of the 605 cm -1 band occurs at a lower temperature than that of the nonirradiated samples. Prior to the onset of decay of the 605 cm -1 band an inverse annealing stage was observed in the irradiated samples, indicating partial restoration of substitutional carbon. The general behavior was discussed with respect to the supersaturation of intrinsic defects, mainly self-interstitials. As a result, large C N (Si I ) M complexes are formed. There are two processes running in parallel: the recovery of substitutional carbon from carbon-related defects and C N (Si I ) M complexes and the transformation of C N (Si I ) M complexes to SiC-based precipitates. Noticeably, in electron-irradiated Ge-doped Si the inverse annealing stage of substitutional carbon is suppressed. Furthermore, our results showed that the Ge doping of Cz-Si of up to 2x10 20 cm -3 does not practically affect the temperature at which oxygen and carbon are completely lost in irradiated Cz-Si:Ge.

The influence of optical parameters on impurity determinations by IR spectroscopy

International Nuclear Information System (INIS)

Lombard, O.J.

1985-01-01

The important role of impurities in semiconductor materials is the subject of continuous research. The concentration of interstitial oxygen impurities in silicon are determined with the aid of infrared spectroscopy. The maximum absorption coefficient of the oxygen absorption peak, centered at 9,06 μm, is determined and the impurity concentration is then calculated using a calibration factor. This procedure was evaluated, paying particular attention to those optical parameters which may influence these impurity determinations. A thorough discussion of the theoretical and experimental aspects of infrared spectroscopy in general is followed by an overview of previous experimental work. This lead to some theoretical analysis regarding the influence of the index of refraction, the index of absorption and multiple reflections in the silicon wafer on impurity determinations. This lead to specific experimental investigations. The influence of the surface morphology of samples on impurity determinations was studied by determining the reflectance of silicon surfaces. It was established that the surface reflectance plays a role and that it must be taken into consideration for accurate impurity concentration determinations. The most accurate values for the absorption coefficient due to oxygen in silicon are calculated. This requires that the surface of the silicon wafers must be highly polished for the formula to be valid. Acceptable values for the absorption coefficient of damaged surfaces are obtained if the uncorrected formula is used. Experimental results may deviate as much as 32% from the real impurity concentration if the wrong formula is used to calculate the absorption coefficient of oxygen in silicon at 9,06 μm

On the radiative effects of light-absorbing impurities on snowpack evolution

Science.gov (United States)

Dumont, M.; Tuzet, F.; Lafaysse, M.; Arnaud, L.; Picard, G.; Lejeune, Y.; Lamare, M.; Morin, S.; Voisin, D.; Di Mauro, B.

2017-12-01

The presence of light absorbing impurities in snow strongly decreases snow reflectance leading to an increase in the amount of solar energy absorbed by the snowpack. This effect is also known as impurities direct radiative effect. The change in the amount of energy absorbed by the snowpack modifies the temperature profile inside the snowpack and in turn snow metamorphism (impurities indirect radiative effects). In this work, we used the detailed snowpack model SURFEX/ISBA-Crocus with an explicit representation of snow light-absorbing impurities content (Tuzet et al., 2017) fed by medium-resolution ALADIN-Climate atmospheric model to represent dust and black carbon atmospheric deposition fluxes. The model is used at two sites: Col de Porte (medium elevation site in the French Alps) and Torgnon (high elevation site in the Italian Alps). The simulations are compared to in-situ observations and used to quantify the effects of light-absorbing impurities on snow melt rate and timing. The respective parts of the direct and indirect radiative effects of light-absorbing impurities in snow are also computed for the two sites, emphasizing the need to account for the interactions between snow metamorphism and LAI radiative properties, to accurately predict the effects of light-absorbing impurities in snow. Moreover, we describe how automated hyperspectral reflectance can be used to estimate effective impurities surface content in snow. Finally we demonstrate how these reflectances measurements either from in situ or satellite data can be used via an assimilation scheme to constrain snowpack ensemble simulations and better predict the snowpack state and evolution.

Steady-state organization of binary mixtures by active impurities

DEFF Research Database (Denmark)

Sabra, Mads Christian; Gilhøj, Henriette; Mouritsen, Ole G.

1998-01-01

The structural reorganization of a phase-separated binary mixture in the presence of an annealed dilution of active impurities is studied by computer-simulation techniques via a simple two-dimensional lattice-gas model. The impurities, each of which has two internal states with different affinity...

Identification of impurities in sodium and its purification

International Nuclear Information System (INIS)

Subbotin, B.I.; Voltchkov, L.G.; Kozlov, F.A.; Zagorulko, Yu.I.; Kuznetsov, E.K.

1976-01-01

The paper presents some investigation results on sodium technology. In particular, a description is given of a calculation method for evaluation of sodium-cover gas-impurities equilibrium compositions as well as experimental results on development of methods for sodium sampling, equipment for non-metallic impurities (oxygen, hydrogen, carbon) constant control in sodium. The investigation results on sodium purification with cold traps are presented

Spectroscopical studies of impurities in the belt pinch HECTOR

International Nuclear Information System (INIS)

Singethan, J.

1981-04-01

In this paper UV-line-intensity measurements of impurities are presented, which have been performed in the belt-pinch HECTOR. From the line-intensities impurity concentrations and information on the radiation losses is be obtained. At temperatures below 100 eV, the energy loss due to line emission of oxygen and carbon impurities is one of the most important electron energy loss mechanisms. Thus the measurement and calculation of the radiation losses is of particular relevance. Furthermore the electron temperature time dependence can be obtained by comparing the line intensity time dependence with the solution of the respective rate equations. (orig./HT) [de

Prevention of serious impurity penetration into water-steam circuits

International Nuclear Information System (INIS)

Burgmann, F.; Bursik, A.; Flunkert, F.; Nieder, R.

1977-01-01

In consequence of reports from several power Plants concerning heavy damages due to penetrations of impurities into the water-steam circuit, the VGB Sub-Committee 'Water Chemistry in Thermal Power Plants' has established a working group to check-up how serious impurity penetration can be avoided. The lecture describes possible danger points. Suitable technical arrangements for the avoidance of penetrations, and possibilities for monitoring will be discussed. Penetration of impurities cannot be avoided with absolute reliability, even when the recommended arrangements and usual monitoring are realized. Additional measures for the protection of water steam circuits will be suggested. (orig.) [de

Impurity effects on the magnetic ordering in chromium

International Nuclear Information System (INIS)

Fishman, R.S.

1992-05-01

It is well-known that impurities profoundly alter the magnetic properties of chromium. While vanadium impurities suppress the Neel temperature T N , manganese impurities enhanced T N substantially. As evidenced by neutron scattering experiments, doping with as little as 0.2% vanadium changes the transition from weakly first order to second order. Young and Sokoloff explained that the first-order transition in pure chromium is caused by a charge-density wave which is the second harmonic of the spin-density wave. By examining the subtle balance between the spin-density and charge- density wave terms in the mean-field free energy, we find that the first-order transition is destroyed when the vanadium concentration exceeds about 0.15%, in agreement with experiments

Impurity Effects in Electroplated-Copper Solder Joints

Directory of Open Access Journals (Sweden)

Hsuan Lee

2018-05-01

Full Text Available Copper (Cu electroplating is a mature technology, and has been extensively applied in microelectronic industry. With the development of advanced microelectronic packaging, Cu electroplating encounters new challenges for atomic deposition on a non-planar substrate and to deliver good throwing power and uniform deposit properties in a high-aspect-ratio trench. The use of organic additives plays an important role in modulating the atomic deposition to achieve successful metallic coverage and filling, which strongly relies on the adsorptive and chemical interactions among additives on the surface of growing film. However, the adsorptive characteristic of organic additives inevitably results in an incorporation of additive-derived impurities in the electroplated Cu film. The incorporation of high-level impurities originating from the use of polyethylene glycol (PEG and chlorine ions significantly affects the microstructural evolution of the electroplated Cu film, and the electroplated-Cu solder joints, leading to the formation of undesired voids at the joint interface. However, the addition of bis(3-sulfopropyl disulfide (SPS with a critical concentration suppresses the impurity incorporation and the void formation. In this article, relevant studies were reviewed, and the focus was placed on the effects of additive formula and plating parameters on the impurity incorporation in the electroplated Cu film, and the void formation in the solder joints.

Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

Energy Technology Data Exchange (ETDEWEB)

Marchenko, A. V. [Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Egorova, A. Yu. [St.-Petersburg Mining University (Russian Federation); Kiselev, V. S.; Seregin, P. P., E-mail: ppseregin@mail.ru [Herzen State Pedagogical University of Russia (Russian Federation)

2017-04-15

Impurity iron atoms in vitreous arsenic-selenide As{sub 2}Se{sub 3} films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

Two-dimensional impurity transport calculations for a high recycling divertor

International Nuclear Information System (INIS)

Brooks, J.N.

1986-04-01

Two dimensional analysis of impurity transport in a high recycling divertor shows asymmetric particle fluxes to the divertor plate, low helium pumping efficiency, and high scrapeoff zone shielding for sputtered impurities

40 CFR 159.179 - Metabolites, degradates, contaminants, and impurities.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 23 2010-07-01 2010-07-01 false Metabolites, degradates, contaminants.../Benefit Information § 159.179 Metabolites, degradates, contaminants, and impurities. (a) Metabolites and... degradation of less than 10 percent in a 30-day period. (b) Contaminants and impurities. The presence in any...

Effects of electronically neutral impurities on muonium in germanium

International Nuclear Information System (INIS)

Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S.; Brewer, J.H.

1983-04-01

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium

Impurities in Drug Products and Active Pharmaceutical Ingredients.

Science.gov (United States)

Kątny, M; Frankowski, M

2017-05-04

Analytical methods should be selective and fast. In modern times, scientists strive to meet the criteria of green chemistry, so they choose analytical procedures that are as short as possible and use the least toxic solvents. It is quite obvious that the products intended for human consumption should be characterized as completely as possible. The safety of a drug is dependent mainly on the impurities that it contains. High pressure liquid chromatography and ultra-high pressure liquid chromatography have been proposed as the main techniques for forced degradation and impurity profiling. The aim of this article was to characterize the relevant classification of drug impurities and to review the methods of impurities determination for atorvastatin (ATV) and duloxetine (DLX) (both in active pharmaceutical ingredients and in different dosage forms). These drugs have an impact on two systems of the human body: cardiac and nervous. Simple characteristics of ATV and DLX, their properties and specificity of action on the human body, are also included in this review. The analyzed pharmaceuticals-ATV (brand name Lipiron) and DLX (brand name Cymbalta)-were selected for this study based on annual rankings prepared by Information Medical Statistics.

High-frequency EPR of surface impurities on nanodiamond

Science.gov (United States)

Peng, Zaili; Stepanov, Viktor; Takahashi, Susumu

Diamond is a fascinating material, hosting nitrogen-vacancy (NV) defect centers with unique magnetic and optical properties. There have been many reports that suggest the existence of paramagnetic impurities near surface of various kinds of diamonds. Electron paramagnetic resonance (EPR) investigation of mechanically crushed nanodiamonds (NDs) as well as detonation NDs revealed g 2 like signals that are attributed to structural defects and dangling bonds near the diamond surface. In this presentation, we investigate paramagnetic impurities in various sizes of NDs using high-frequency (HF) continuous wave (cw) and pulsed EPR spectroscopy. Strong size dependence on the linewidth of HF cw EPR spectra reveals the existence of paramagnetic impurities in the vicinity of the diamond surface. We also study the size dependence of the spin-lattice and spin-spin relaxation times (T1 and T2) of single substitutional nitrogen defects in NDs Significant deviations from the temperature dependence of the phonon-assisted T1 process were observed in the ND samples, and were attributed to the contribution from the surface impurities. This work was supported by the Searle Scholars Program and the National Science Foundation (DMR-1508661 and CHE-1611134).

Self-consistent gyrokinetic modeling of neoclassical and turbulent impurity transport

Science.gov (United States)

Estève, D.; Sarazin, Y.; Garbet, X.; Grandgirard, V.; Breton, S.; Donnel, P.; Asahi, Y.; Bourdelle, C.; Dif-Pradalier, G.; Ehrlacher, C.; Emeriau, C.; Ghendrih, Ph.; Gillot, C.; Latu, G.; Passeron, C.

2018-03-01

Trace impurity transport is studied with the flux-driven gyrokinetic GYSELA code (Grandgirard et al 2016 Comput. Phys. Commun. 207 35). A reduced and linearized multi-species collision operator has been recently implemented, so that both neoclassical and turbulent transport channels can be treated self-consistently on an equal footing. In the Pfirsch-Schlüter regime that is probably relevant for tungsten, the standard expression for the neoclassical impurity flux is shown to be recovered from gyrokinetics with the employed collision operator. Purely neoclassical simulations of deuterium plasma with trace impurities of helium, carbon and tungsten lead to impurity diffusion coefficients, inward pinch velocities due to density peaking, and thermo-diffusion terms which quantitatively agree with neoclassical predictions and NEO simulations (Belli et al 2012 Plasma Phys. Control. Fusion 54 015015). The thermal screening factor appears to be less than predicted analytically in the Pfirsch-Schlüter regime, which can be detrimental to fusion performance. Finally, self-consistent nonlinear simulations have revealed that the tungsten impurity flux is not the sum of turbulent and neoclassical fluxes computed separately, as is usually assumed. The synergy partly results from the turbulence-driven in-out poloidal asymmetry of tungsten density. This result suggests the need for self-consistent simulations of impurity transport, i.e. including both turbulence and neoclassical physics, in view of quantitative predictions for ITER.

Photonic band gap materials: design, synthesis, and applications

International Nuclear Information System (INIS)

John, S.

2000-01-01

Full text: Unlike semiconductors which facilitate the coherent propagation of electrons, photonic band gap (PBG) materials execute their novel functions through the coherent localization of photons. I review and discuss our recent synthesis of a large scale three-dimensional silicon photonic crystal with a complete photonic band gap near 1.5 microns. When a PBG material is doped with impurity atoms which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Inside the gap, the photon forms a bound state to the atom. Outside the gap, radiative dynamics in the colored vacuum is highly non Markovian. I discuss the influence of these memory effects on laser action. When spontaneous emission is absent, the next order radiative effect (resonance dipole dipole interaction between atoms) must be incorporated leading to anomalous nonlinear optical effects which occur at a much lower threshold than in ordinary vacuum. I describe the collective switching of two-level atoms near a photonic band edge, by external laser field, from a passive state to one exhibiting population inversion. This effect is forbidden in ordinary vacuum. However, in the context of a PBG material, this effect may be utilized for an all-optical transistor. Finally, I discuss the prospects for a phase sensitive, single atom quantum memory device, onto which information may be written by an external laser pulse

Influence of impurities on silicide contact formation

International Nuclear Information System (INIS)

Kazdaev, Kh.R.; Meermanov, G.B.; Kazdaev, R.Kh.

2002-01-01

Research objectives of this work are to investigate the influence of light impurities implantation on peculiarities of the silicides formation in molybdenum monocrystal implanted by silicon, and in molybdenum films sputtered on silicon substrate at subsequent annealing. Implantation of the molybdenum samples was performed with silicon ions (90 keV, 5x10 17 cm -2 ). Phase identification was performed by X ray analysis with photographic method of registration. Analysis of the results has shown the formation of the molybdenum silicide Mo 3 Si at 900 deg. C. To find out the influence of impurities present in the atmosphere (C,N,O) on investigated processes we have applied combined implantation. At first, molybdenum was implanted with ions of the basic component (silicon) and then -- with impurities ions. Acceleration energies (40keV for C, 45 keV for N and 50 keV for O) were chosen to obtain the same distribution profiles for basic and impurities ions. Ion doses were 5x10 17 cm -2 for Si-ions and 5x10 16 cm -2 - for impurities. The most important results are reported here. The first, for all three kinds of impurities the decreased formation temperatures of the phase Mo 3 Si were observed; in the case of C and N it was ∼100 deg. and in the case of nitrogen - ∼200 deg. Further, simultaneously with the Mo 3 Si phase, the appearance of the rich-metal phase Mo 5 Si 3 was registered (not observed in the samples without additional implantation). In case of Mo/Si-structure, the implantation of the impurities (N,O) was performed to create the peak concentration (∼4at/%) located in the middle of the molybdenum film (∼ 150nm) deposited on silicon substrate. Investigation carried out on unimplanted samples showed the formation of the silicide molybdenum MoSi 2 , observed after annealing at temperatures 900/1000 deg. C, higher than values 500-600 deg. C reported in other works. It is discovered that electrical conductivity of Mo 5 Si 3 -films synthesized after impurities

Defect-impurity interactions in irradiated germanium

International Nuclear Information System (INIS)

Cleland, J.W.; James, F.J.; Westbrook, R.D.

1975-07-01

Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

Spectroscopic and electron-ion collision data for plasma impurities

International Nuclear Information System (INIS)

Faenov, A.; Marchand, R.; Tawara, H.; Vainshtein, L.; Wiese, W.

1992-01-01

This Working Group Report briefly reviews and summarizes the available spectroscopic and electron-ion collision data for plasma impurities. Included are lithium, neon, and argon, which, although they are not plasma impurities per se, are introduced into the plasma through the application of diagnostic techniques. 32 refs, 2 tabs

Plasma impurity-control studies in CTX

International Nuclear Information System (INIS)

Barnes, C.W.; Henins, I.; Hoida, H.W.; Jarboe, T.R.; Linford, R.K.; Marshall, J.; Sherwood, A.R.; Tuszewski, M.

1981-01-01

In the past, magnetized coaxial gun generated Compact Toroids (CTs) have exhibited magnetic field and density lifetimes of about 250 to 350 μs and electron temperatures of about 10 eV. In recent experiments, after hydrogen discharge cleaning the gun and flux conserver surfaces, the lifetimes have been extended to 550 μs. This improvement in lifetime, together with spectroscopic and bolometric measurements, are consistent with the interpretation that the CT plasma losses are impurity dominated and that discharge cleaning is reducing the impurities. Details of these measurements are described as well as successful experiments which led to a more open flux conserver

Plasma impurity-control studies in CTX

Energy Technology Data Exchange (ETDEWEB)

Barnes, C.W.; Henins, I.; Hoida, H.W.; Jarboe, T.R.; Linford, R.K.; Marshall, J.; Sherwood, A.R.; Tuszewski, M.

1981-01-01

In the past, magnetized coaxial gun generated Compact Toroids (CTs) have exhibited magnetic field and density lifetimes of about 250 to 350 ..mu..s and electron temperatures of about 10 eV. In recent experiments, after hydrogen discharge cleaning the gun and flux conserver surfaces, the lifetimes have been extended to 550 ..mu..s. This improvement in lifetime, together with spectroscopic and bolometric measurements, are consistent with the interpretation that the CT plasma losses are impurity dominated and that discharge cleaning is reducing the impurities. Details of these measurements are described as well as successful experiments which led to a more open flux conserver.

Impurity penetration and transport during VH-mode on DIII-D

International Nuclear Information System (INIS)

Lippmann, S.I.; Evans, T.E.; Jackson, G.L.; West, W.P.

1992-05-01

A new modeling effort is made in order to understand the observed relatively low levels of impurity contamination during the VH-mode phase on DIII-D, as compared to those observed during the H-mode phase of selected discharges. The key element is the inclusion of the real 2-D flux surface geometry in the prediction of impurity penetration of sputtered atoms through the scrape-off layer into the core plasma. Of the elements which determine the impurity content in the plasma: sputtering yield, penetration, and core transport, the penetration through the scrape-off layer is found to be the most determinative factor. The low impurity content in VH-mode is attributed to the development of a scrape-off layer with higher density and temperature properties than those normally obtained in H-mode

Double blocking in the superdeformed {sup 192}Tl nucleus

Energy Technology Data Exchange (ETDEWEB)

Liang, Y; Carpenter, M P; Janssens, R V.F.; Ahmad, I; Henry, R; Khoo, T L; Lauritsen, T [Argonne National Lab., IL (United States); Soramel, F [Padova University, Padova (Italy); Pilotte, S [Ottawa Univ., ON (Canada); Lewis, J M; Riedinger, L L; Yu, C H [Tennessee Univ., Knoxville, TN (United States); Garg, U; Reviol, W [Notre Dame Univ., IN (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States)

1992-08-01

Six superdeformed bands have been found in the nucleus {sup 192}Tl. For two of the bands, the dynamic moment of inertia J{sup (2)} is found to be constant with the rotational frequency {Dirac_h}{omega}. This result can be understood in terms of Pauli blocking of quasiparticle alignments in intruder orbitals, and represents the first experimental evidence that the alignment of these intruders is responsible for the smooth rise in J{sup (2)} seen in other superdeformed nuclei of this mass region. (author). 18 refs., 2 figs.

Studies of impurity recycling by the collector probe technique

International Nuclear Information System (INIS)

Hildebrandt, D.; Grote, H.; Herrmann, A.; Laux, M.; Pech, P.; Reiner, H.D.; Wolff, H.

1987-01-01

In order to study recycling effects of the nonintrinsic impurity Li discharges with and without LiD-pellet injection were investigated. The observed maximum impurity level of Li in the SOL plasma of discharges without injection reaches less than 10% of that observed in discharges with injection. The measurements offer the possibility to distinguish between influxes from the wall and those which reach the collector probe via the core plasma. The time evolution, orientation and radial dependence of the impurity fluxes are characteristic features of their origin. The consideration of all these features facilitates a better understanding of collector probe measurements in the SOL-plasma. (orig.)

Patterns induced by magnetic impurities in d-wave superconductors

International Nuclear Information System (INIS)

Zuo Xianjun; Gong Changde; Zhou Yuan

2010-01-01

We investigate the modulated patterns induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping based on the t-t ' -U-V model. Modulated checkerboard patterns with periodicity of eight or four lattice constants (8a or 4a) in the spin-, charge- and DSC orders are observed. Moreover, the checkerboard modulation in the spin order appear to be robust against parameter changes, which is consistent with neutron-scattering experiments. For the two-impurity case, a modulated stripe-like spin order with periodicity 8a is induced, which coexists with the DSC order. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

Patterns induced by magnetic impurities in d-wave superconductors

Science.gov (United States)

Zuo, Xian-Jun; Gong, Chang-De; Zhou, Yuan

2010-07-01

We investigate the modulated patterns induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping based on the t-t-U-V model. Modulated checkerboard patterns with periodicity of eight or four lattice constants (8 a or 4 a) in the spin-, charge- and DSC orders are observed. Moreover, the checkerboard modulation in the spin order appear to be robust against parameter changes, which is consistent with neutron-scattering experiments. For the two-impurity case, a modulated stripe-like spin order with periodicity 8 a is induced, which coexists with the DSC order. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

Nonlinear excitations in two-dimensional molecular structures with impurities

DEFF Research Database (Denmark)

Gaididei, Yuri Borisovich; Rasmussen, Kim; Christiansen, Peter Leth

1995-01-01

We study the nonlinear dynamics of electronic excitations interacting with acoustic phonons in two-dimensional molecular structures with impurities. We show that the problem is reduced to the nonlinear Schrodinger equation with a varying coefficient. The latter represents the influence...... of the impurity. Transforming the equation to the noninertial frame of reference coupled with the center of mass we investigate the soliton behavior in the close vicinity of the impurity. With the help of the lens transformation we show that the soliton width is governed by an Ermakov-Pinney equation. We also...... excitations. Analytical results are in good agreement with numerical simulations of the nonlinear Schrodinger equation....

Finite-temperature behavior of an impurity in the spin-1/2 XXZ chain

International Nuclear Information System (INIS)

Yahagi, Ryoko; Deguchi, Tetsuo; Sato, Jun

2014-01-01

We study the zero- and the finite-temperature behavior of the integrable spin-1/2 XXZ periodic chain with an impurity by the algebraic and thermal Bethe ansatz methods. We evaluate the local magnetization on the impurity site at zero temperature analytically and derive the impurity susceptibility exactly from it. In the graphs of the impurity specific heat versus temperature, we show how the impurity spin becomes more liberated from the bulk many-body effect as the exchange coupling between the impurity spin and other spins decreases and that at low temperature it couples strongly to them such as in the Kondo effect. Thus, we observe not only the crossover behavior from the high- to the low-temperature regime, but another from the N-site chain to the (N − 1)-site chain with a free impurity spin. We also show that the estimate of the Wilson ratio at a given low temperature is independent of the impurity parameter if its absolute value is small enough with respect to the temperature and the universality class is described by the XXZ anisotropy in terms of the dressed charge. (paper)

Nonlinearity and disorder: Classification and stability of nonlinear impurity modes

DEFF Research Database (Denmark)

Sukhorukov, Andrey A.; Kivshar, Yuri S.; Bang, Ole

2001-01-01

We study the effects produced by competition of two physical mechanisms of energy localization in inhomogeneous nonlinear systems. As an example, we analyze spatially localized modes supported by a nonlinear impurity in the generalized nonlinear Schrödinger equation and describe three types of no...... the case of a power-law nonlinearity in detail. We discuss several scenarios of the instability-induced dynamics of the nonlinear impurity modes, including the mode decay or switching to a new stable state, and collapse at the impurity site....

Detection, isolation and characterization of principle synthetic route indicative impurity in telmisartan

Directory of Open Access Journals (Sweden)

V. Srinivasan

2016-11-01

Full Text Available An unknown impurity was detected in the telmisartan bulk drug (active pharmaceutical ingredient – API using an isocratic reversed-phase high performance liquid chromatography (HPLC. This impurity was isolated by preparative HPLC. Spectral data of the isolated impurity were collected. Based on the spectral data deriving from two dimensional nuclear magnetic spectroscopy (2D-NMR and mass spectrometry (MS, the impurity was characterized as “methyl 4′,4′-dibromo methyl biphenyl-2-carboxylate”. The arrived structure was further confirmed by theoretical studies.

Pfirsch–Schlüter neoclassical heavy impurity transport in a rotating plasma

International Nuclear Information System (INIS)

Belli, E A; Candy, J; Angioni, C

2014-01-01

In this work, we extend previous analytic theories for the neoclassical transport of a trace heavy impurity in a rotating plasma in the Pfirsch–Schlüter regime. The complete diffusive and convective components of the ambipolar particle flux are derived. The solution is valid for arbitrary impurity charge and impurity Mach number and for general geometry. Inclusion of finite main-ion temperature gradient effects is shown in the small ion Mach number limit. A simple interpolation formula is derived for the case of high impurity charge and circular geometry. While an enhancement of the diffusion coefficient is found for order one impurity Mach number, a reduction due to the rotation-driven poloidal asymmetry in the density occurs for very large Mach number. (paper)

Extended numerical modeling of impurity neoclassical transport in tokamak edge plasmas

International Nuclear Information System (INIS)

Inoue, H.; Yamoto, S.; Hatayama, A.; Homma, Y.

2016-01-01

Understanding of impurity transport in tokamaks is an important issue in order to reduce the impurity contamination in fusion core plasmas. Recently, a new kinetic numerical scheme of impurity classical/neoclassical transport has been developed. This numerical scheme makes it possible to include classical self-diffusion (CL SD), classical inward pinch (CL IWP), and classical temperature screening effect (CL TSE) of impurity ions. However, impurity neoclassical transport has been modeled only in the case where background plasmas are in the Pfirsch-Schluter (PS) regime. The purpose of this study is to extend our previous model to wider range of collisionality regimes, i.e., not only the PS regime, but also the plateau regime. As in the previous study, a kinetic model with Binary Collision Monte-Carlo Model (BMC) has been adopted. We focus on the modeling of the neoclassical self-diffusion (NC SD) and the neoclassical inward pinch (NC IWP). In order to simulate the neoclassical transport with the BCM, velocity distribution of background plasma ions has been modeled as a deformed Maxwell distribution which includes plasma density gradient. Some test simulations have been done. As for NC SD of impurity ions, our scheme reproduces the dependence on the collisionality parameter in wide range of collisionality regime. As for NC IWP, in cases where test impurity ions and background ions are in the PS and plateau regimes, parameter dependences have been reproduced. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Extended numerical modeling of impurity neoclassical transport in tokamak edge plasmas

Energy Technology Data Exchange (ETDEWEB)

Inoue, H.; Yamoto, S.; Hatayama, A. [Graduate School of Science and Technology, Keio University, Hiyoshi, Yokohama (Japan); Homma, Y. [Graduate School of Science and Technology, Keio University, Hiyoshi, Yokohama (Japan); Research Fellow of Japan Society for the Promotion of Science, Tokyo (Japan)

2016-08-15

Understanding of impurity transport in tokamaks is an important issue in order to reduce the impurity contamination in fusion core plasmas. Recently, a new kinetic numerical scheme of impurity classical/neoclassical transport has been developed. This numerical scheme makes it possible to include classical self-diffusion (CL SD), classical inward pinch (CL IWP), and classical temperature screening effect (CL TSE) of impurity ions. However, impurity neoclassical transport has been modeled only in the case where background plasmas are in the Pfirsch-Schluter (PS) regime. The purpose of this study is to extend our previous model to wider range of collisionality regimes, i.e., not only the PS regime, but also the plateau regime. As in the previous study, a kinetic model with Binary Collision Monte-Carlo Model (BMC) has been adopted. We focus on the modeling of the neoclassical self-diffusion (NC SD) and the neoclassical inward pinch (NC IWP). In order to simulate the neoclassical transport with the BCM, velocity distribution of background plasma ions has been modeled as a deformed Maxwell distribution which includes plasma density gradient. Some test simulations have been done. As for NC SD of impurity ions, our scheme reproduces the dependence on the collisionality parameter in wide range of collisionality regime. As for NC IWP, in cases where test impurity ions and background ions are in the PS and plateau regimes, parameter dependences have been reproduced. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electromagnetic effects on trace impurity transport in tokamak plasmas

Science.gov (United States)

Hein, T.; Angioni, C.

2010-01-01

The impact of electromagnetic effects on the transport of light and heavy impurities in tokamak plasmas is investigated by means of an extensive set of linear gyrokinetic numerical calculations with the code GYRO [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] and of analytical derivations with a fluid model. The impurity transport is studied by appropriately separating diffusive and convective contributions, and conditions of background microturbulence dominated by both ion temperature gradient (ITG) and trapped electron modes (TEMs) are analyzed. The dominant contribution from magnetic flutter transport turns out to be of pure convective type. However it remains small, below 10% with respect to the E ×B transport. A significant impact on the impurity transport due to an increase in the plasma normalized pressure parameter β is observed in the case of ITG modes, while for TEM the overall effect remains weak. In realistic conditions of high β plasmas in the high confinement (H-) mode with dominant ITG turbulence, the impurity diffusivity is found to decrease with increasing β in qualitative agreement with recent observations in tokamaks. In contrast, in these conditions, the ratio of the total off-diagonal convective velocity to the diagonal diffusivity is not strongly affected by an increase in β, particularly at low impurity charge, due to a compensation between the different off-diagonal contributions.

Nuclear relaxation in semiconductors doped with magnetic impurities

International Nuclear Information System (INIS)

Mel'nichuk, S.V.; Tovstyuk, N.K.

1984-01-01

The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

Edge and Core Impurity Transport Study with Spectroscopic Instruments in LHD

International Nuclear Information System (INIS)

Morita, Shigeru; Goto, Motoshi; Kobayashi, Masahiro; Muto, Sadatsugu; Chowdhuri, Malay Bikas; Chunfeng, Dong; Hangyu, Zhou; Zhengying, Cui; Fujii, Keisuke; Hasuo, Masahiro; Iwamae, Atsushi; Furuzawa, Akihiro; Sakurai, Ikuya; Tawara, Yuzuru; Yinxian, Jie; Baonian, Wan; Zhenwei, Wu; Koubiti, Mohammed; Yamaguchi, Naohiro

2009-01-01

Impurity transport was investigated at both edge and core regions in large helical device (LHD) with developed spectroscopic instruments which can measure one- and two-dimensional distributions of impurities. The edge impurity behavior was studied recently using four carbon resonant transitions in different ionization stages of CIII (977A), CIV (1548A), CV (40.3A) and CVI (33.7A). When the line-averaged electron density, n e , is increased from 1 to 6 x 10 13 cm -3 , the ratio of (CIII+CIV)/n e increases while the ratio of (CV+CVI)/n e decreases. Here, CIII+CIV (CV+CVI) expresses the sum of CIII (CV) and CIV (CVI) intensities. The CIII+CIV indicates the carbon influx and the CV+CVI indicates the emissions through the transport in the ergodic layer. The result thus gives experimental evidence on the impurity screening by the ergodic layer in LHD, which is also supported by a three-dimensional edge particle simulation. The core impurity behavior is also studied in high-density discharges (n e ≤ 1x 10 15 cm -3 ) with multi H 2 -pellets injection. It is found that the ratio of V/D (V: convection velocity, D: diffusion coefficient) decreases after pellet injection and Z eff profile shows a flat one at values of 1.1-1.2. These results confirm no impurity accumulation occurs in high-density discharges. As a result, the iron density, n Fe , is analyzed to be 6 x 10 -7 ( = n Fe /n e ) of which the amount can be negligible as radiation source even in such high-density discharges. One- and two-dimensional impurity distributions from space-resolved VUV and EUV spectrometers newly developed for further impurity transport study are also presented with their preliminary results. (magnetically confined plasma)

Modeling impurity-assisted chain creation in noble-metal break junctions

International Nuclear Information System (INIS)

Di Napoli, S; Thiess, A; Blügel, S; Mokrousov, Y

2012-01-01

In this work we present the generalization of the model for chain formation in break junctions, introduced by Thiess et al (2008 Nano Lett. 8 2144), to zigzag transition-metal chains with s and p impurities. We apply this extended model to study the producibility trends for noble-metal chains with impurities, often present in break junction experiments, namely, Cu, Ag and Au chains with H, C, O and N adatoms. Providing the material-specific parameters for our model from systematic full-potential linearized augmented plane-wave first-principles calculations, we find that the presence of such impurities crucially affects the binding properties of the noble-metal chains. We reveal that both the impurity-induced bond strengthening and the formation of zigzag bonds can lead to a significantly enhanced probability for chain formation in break junctions. (paper)

Corrosion behavior of pyroclore-rich titanate ceramics for plutonium disposition; impurity effects

International Nuclear Information System (INIS)

Bakel, A. J.

1999-01-01

The baseline ceramic contains Ti, U, Ca, Hf, Gd, and Ce, and is made up of only four phases, pyrochlore, zirconolite, rutile, and brannerite. The impurities present in the three other ceramics represent impurities expected in the feed, and result in different phase distributions. The results from 3 day, 90 C MCC-1 tests with impurity ceramics were significantly different than the results from tests with the baseline ceramic. Overall, the addition of impurities to these titanate ceramics alters the phase distributions, which in turn, affects the corrosion behavior

Photoluminescence studies of ZnO doped with stable and radioactive impurities

CERN Document Server

Cullen, Joseph; Martin O, Henry

In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radioactive isotopes, in order to investigate the chemical nature of exciton re-combinations bound to previously unidentified defects. Photo-luminescence (PL) is discussed and is used extensively as the primary investigative technique. A new defect emission feature, centred around 3.324 eV, is found to be related to Ge impurities occupying substitutional Zn sites in ZnO. This centre is investigated by temperature dependent PL, piezo-spectroscopy and Zeeman spectroscopy. The centre is donor-like in nature. Uniaxial stress measurements indicate that the defect centre has trigonal symmetry and applied magnetic field measurements reveal the neutral charge state of the centre and the donor-like binding mechanism. Subsequent to this, a study is undertaken of the iso-electronic defect Hg in ZnO studying the zero phonon feature at 3.279 eV and its associated phonon replica band. Temperature dependent measurements reveal tw...

Impurity monitoring by laser-induced fluorescence techniques

International Nuclear Information System (INIS)

Gelbwachs, J.A.

1984-01-01

Laser-induced fluorescence spectroscopy can provide a highly sensitive and selective means of detecting atomic and ionic impurities. Because the photodetector can be physically isolated from the laser-excited region, these techniques can be applied to monitoring in hostile environments. The basic concepts behind fluorescence detection are reviewed. Saturated optical excitation is shown to maximize impurity atom emission yield while mitigating effects of laser intensity fluctuations upon absolute density calibration. Monitoring in high- and low-pressure monitoring environments is compared. Methods to improve detection sensitivity by luminescence background suppression are presented

Classical impurity ion confinement in a toroidal magnetized fusion plasma.

Science.gov (United States)

Kumar, S T A; Den Hartog, D J; Caspary, K J; Magee, R M; Mirnov, V V; Chapman, B E; Craig, D; Fiksel, G; Sarff, J S

2012-03-23

High-resolution measurements of impurity ion dynamics provide first-time evidence of classical ion confinement in a toroidal, magnetically confined plasma. The density profile evolution of fully stripped carbon is measured in MST reversed-field pinch plasmas with reduced magnetic turbulence to assess Coulomb-collisional transport without the neoclassical enhancement from particle drift effects. The impurity density profile evolves to a hollow shape, consistent with the temperature screening mechanism of classical transport. Corroborating methane pellet injection experiments expose the sensitivity of the impurity particle confinement time to the residual magnetic fluctuation amplitude.

The effects of naturally occurring impurities in rock salt

Indian Academy of Sciences (India)

In this paper we investigate the effect that naturally occurring impurities in salt mines have both on effective permittivity of the medium and on radio wave propagation at ∼200 MHz. The effective permittivity is determined based on the dielectric properties of salt and the characteristics of the main impurities. We conclude that ...

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Directory of Open Access Journals (Sweden)

E. Kasper

2012-01-01

Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

Size, Shape and Impurity Effects on Superconducting critical temperature.

Science.gov (United States)

Umeda, Masaki; Kato, Masaru; Sato, Osamu

Bulk superconductors have their own critical temperatures Tc. However, for a nano-structured superconductor, Tc depends on size and shape of the superconductor. Nishizaki showed that the high pressure torsion on bulks of Nb makes Tc higher, because the torsion makes many nano-sized fine grains in the bulks. However the high pressure torsion on bulks of V makes Tc lower, and Nishizaki discussed that the decrease of Tc is caused by impurities in the bulks of V. We studied size, shape, and impurity effects on Tc, by solving the Gor'kov equations, using the finite element method. We found that smaller and narrower superconductors show higher Tc. We found how size and shape affects Tc by studying spacial order parameter distributions and quasi-particle eigen-energies. Also we studied the impurity effects on Tc, and found that Tc decreases with increase of scattering rate by impurities. This work was supported in part of KAKENHI Grant Number JP26400367 and JP16K05460, and program for leading graduate schools of ministry of education, culture, sports, science and technology-Japan.

Effect of impurities on kinetic transport processes in fusion plasmas

Energy Technology Data Exchange (ETDEWEB)

Braun, Stefanie

2010-12-10

Within the framework of this thesis, different problems arising in connection with impurities have been investigated. Collisional damping of zonal flows in tokamaks: Since the Coulomb collision frequency increases with increasing ion charge, heavy, highly charged impurities play an important role in this process. The effect of such impurities on the linear response of the plasma to an external potential perturbation, as caused by zonal flows, is calculated with analytical methods. In comparison with a pure plasma, the damping of the flows occurs, as expected, considerably faster; for experimentally relevant parameters, the enhancement exceeds the effective charge Z{sub eff} of the plasma. Impurity transport driven by microturbulence in tokamaks: With regard to impurities, it is especially important whether the resulting flows are directed inwards or outwards, since they are deleterious for core energy confinement on the one hand, but on the other hand help protecting plasma-facing components from too high energy fluxes in the edge region. A semi-analytical model is presented describing the resulting impurity fluxes and the stability boundary of the underlying mode. The main goal is to bridge the gap between, on the one hand, costly numerical simulations, which are applicable to a broad range of problems but yield scarcely traceable results, and, on the other hand, analytical theory, which might ease the interpretation of the results but is so far rather rudimentary. The model is based on analytical formulae whenever possible but resorts to a numerical treatment when the approximations necessary for an analytical solution would lead to a substantial distortion of the results. Both the direction of the impurity flux and the stability boundary are found to depend sensitively on the plasma parameters such as the impurity density and the temperature gradient. Pfirsch-Schlueter transport in stellarators: Due to geometry effects, collisional transport plays a much more

Soliton scatterings by impurities in a short-length sine-Gordon chain

International Nuclear Information System (INIS)

Dikande, A.M.; Kofane, T.C.

1995-07-01

The scattering of soliton by impurities at the frontiers of a finite-length region of an infinite sine-Gordon chain is analyzed. The impurities consist of two isotopic inhomogeneities installed at the boundaries of the finite-length region. The soliton solution in the region is found in term of snoidal sine-Gordon soliton which properly takes into account the effects of the boundaries. By contrast, the soliton solutions in the neighboring sides of the region are obtained in terms of the so-called large-amplitude, localized kinks with limiting spatial extensions at x → ± ∞, which is equal ±π. Using the continuity of these soliton solutions at the frontiers as well as appropriate boundary conditions, it is shown that the soliton may be either i) reflected by the incident impurity; ii) trapped (with oscillating motions) between the two impurities (i.e. inside the infinite region); or iii) transmitted by the second impurity into the third, infinitely extended region. The threshold velocities for the reflection and transmission into different regions are found and shown to vary exponentially as a function of the length of the bounded region. The frequency of soliton oscillations between the impurities has also been calculated in some acceptable limit. (author). 28 refs, 1 fig

Models for impurity production and transport in tokamaks

International Nuclear Information System (INIS)

Hogan, J.T.

1976-01-01

Models for the edge conditions which are commonly used in tokamak transport codes have been kept simple partly because of a lack of data. A report is presented on an improved model for the particle and energy balance of e - , H 1 + , H 1 0 , H 2 + , H 2 0 , O 0 , O/sup (1 yields 8) + / in the plasma scrape-off region. Experiments should yield the needed data in the near future, and allow one to test the model. The diffusion of impurities has been studied with a neoclassical model. The role of 'anomalous spreading' of the impurity distribution has been studied for the case of Fe. A model is presented for the expulsion of low-Z (oxygen) impurities for cases where q(0) greater than 1, but in which a large shear-free region is produced in the plasma core

A crystalline cluster method for deep impurities in insulators

International Nuclear Information System (INIS)

Guimaraes, P.S.

1983-01-01

An 'ab initio' self-consistent-field crystalline-cluster approach to the study of deep impurity states in insulators is proposed. It is shown that, in spite of being a cluster calculation, the interaction of the impurity with the crystal environment is fully taken into account. It is also shown that the present representation of the impurity states is, at least, as precise as the crystalline cluster representation of the pure crystal electronic structure. The procedure has been tested by performing the calculation of the electronic structure of the U center in a sodium chloride crystal, and it has been observed that the calculated GAMMA 1 - GAMMA 15 absorption energy is in good agreement with experiment. (Author) [pt

A crystalline cluster method for deep impurities in insulators

International Nuclear Information System (INIS)

Guimaraes, P.S.

1983-01-01

An ''ab initio'' self-consistent-field crysttalline-cluster approach to the study of deep impurity states in insulators is proposed. It is shown that, in spite of being a cluster calculation, the interaction of the impurity with the crystal environment is fully taken into account. It is also shown that the present representation of the impurity states is, at least, as precise as the crystalline cluster representation of the pure crystal electronic structure. The procedure has been tested by performing the calculation of the electronic structure of the U center in a sodium chloride crystal, and it has been observed that the calculated γ 1 - γ 15 absorption energy is in good agreement with experiment. (author) [pt

Experimental and gyrokinetic investigation of core impurity transport in Alcator C-mod

Science.gov (United States)

Howard, N.; Greenwald, M.; Podpaly, Y.; Reinke, M. L.; Rice, J. E.; White, A. E.; Mikkelsen, D. R.; Puetterich, T.

2010-11-01

A new multiple pulse laser blow-off system coupled with an upgraded high resolution x-ray spectrometer with spatial resolution allow for the most detailed studies of impurity transport on Alcator C-mod to date. Trace impurity injections created by the laser blow-off technique were introduced into plasmas with a wide range of parameters and time evolving profiles of He-like calcium were measured. The unique measurement of a single charge state profile and line integrated emission measurements from spectroscopic diagnostics were compared with the simulated emission from the impurity transport code STRAHL. A nonlinear least squares fitting routine was coupled with STRAHL, allowing for core impurity transport coefficients with errors to be determined. With this method, experimental data from trace calcium injections were analyzed and radially dependent, core values (< r/a ˜.6) of the diffusive and convective components of the impurity flux were obtained. The STRAHL results are compared with linear and global, nonlinear simulations from the gyrokinetic code GYRO. Results of this comparison and an investigation of the underlying physics associated with turbulent impurity transport will be presented.

Engineering and material aspects of impurity control systems

International Nuclear Information System (INIS)

Koski, J.A.

1985-01-01

The design of impurity control devices for fusion energy devices is discussed from the engineering and materials viewpoint. First, examples of impurity control devices are presented, and the plasma edge environment for which they are designed is briefly described. Materials concerns related to the design of the components are discussed and some currently proposed designs presented. Engineering tools available to the designer are listed, and some commonly encountered engineering analysis problems described

Method of plasma impurity control without magnetic divertor

International Nuclear Information System (INIS)

Schivell, J.F.

1977-06-01

A method is proposed for controlling impurity generation in a tokomak by skimming and pumping the scrape-off. This method avoids many of the complications of a magnetic divertor, such as specially configured magnetic fields, toroidal symmetry, and inefficient use of toroidal field volume. Estimates are given for operating parameters. Impurity reductions of as much as a factor of 10 should be achievable. The necessary high-capacity pump would employ either titanium gettering or cryocondensation

On the photo-ionization of impurity centres in semiconductors

International Nuclear Information System (INIS)

Tomak, M.

1982-10-01

The dependence of the photo-ionization cross-section on photon energy is calculated. The impurity potential is assumed to be of the Hulthen potential type and bound state wave function is calculated variationally. The results show that, at least in some cases, the Hulthen potential may describe the impurity better than the hydrogen or delta function potentials. (author)

Demixing of impurities and hydrogen as deduced from Zeff profiles in the boronized ASDEX

International Nuclear Information System (INIS)

Steuer, K.H.; Roehr, H.; Engelhardt, W.; Fussmann, G.; Kallenbach, A.; Kurzan, B.; Murmann, H.D.

1990-01-01

Substantial progress towards fusion has been made in the confinement, stability and heating of tokamak plasmas. The transport behaviour of magnetically confined plasmas, however, is still an unsolved problem. The transport mechanisms of hydrogen and of impurities are known to be different, leading to phenomena such as impurity accumulation on axis, especially in good confinement regimes, and more generally to demixing of the various species. Besides energy losses from impurity radiation, one has to be concerned about dilution of the fuel-ion density, and about effects that impurities may have on the main ion and electron transport. To understand the transport behaviour of the different plasma species, one needs their spatial density profiles. It is convenient to represent the various impurities by a characteristic impurity ion with a density n z and a fictive charge Z (Z = Σn i Z i 2 / Σn i Z i ; i ≥ 2). A typical value for Z is 7, indicating that light impurities are dominating. Comparing the different profiles, we find characteristic differences in the electron, proton and impurity transport behaviour. (orig./AH)

Neutron activation determination of impurities in molybdenum

International Nuclear Information System (INIS)

Usmanova, M.M.; Mukhamedshina, N.M.; Obraztsova, T.V.; Saidakhmedov, K.Kh.

1984-01-01

Instrumental neutron-activation techniques of impurity element determination in molybdenum and MoO 3 (solid and powdered samples) have been developed. When determining impurities of Na, K, Mn, Cu, W, Re molybdenum has been irradiated by thermal neutrons in reactor for 20 min, the sample mass constituted 200-300 mg, sample cooling time after irradiation - 2.5-3.5 h. It is shown that in the process of Cr, Fe, Co, Zn determination the samples should be irradiated with thermal neutrons, and in the process of Sb, Ta and Ni determination - with resonance and fast neutrons. Simultaneous determination of the elements during irradiation with neutrons with reactor spectrum is possible. When determining P and S the samples are irradiated with thermal and epithermal neutrons and β-activity of samples and comparison samples are measured using β-spectrometer with anthracene crystal. The techniques developed permit to determine impurities in Mo with a relative standard deviation 0.07-0.15 and lower boundaries of contents determined - 10 -4 - 10 -7 %

Separation coefficients of liquid-vapor in systems formed by yttrium chloride with some impurities

International Nuclear Information System (INIS)

Volkov, V.T.; Nikiforova, T.V.; Nisel'son, L.A.; Telegin, G.F.

1990-01-01

Using equilibrium Rayleigh distillation in the 800-950 deg C temperature range, separation coefficients of liquid-vapor for systems, formed by yttrium chloride with Co, Cr, Ni, Mn, Fe, Cu, Na, K, Mg, Ca, Li impurities are determined. The impurity concentration lies within 0.02-0.4 mass. % limits of each impurity, and total impurity concentration does not exceed 1 mass. %. The tested impurities, except for calcium, are more volatile than the base, yttrium trichloride. In most systems negative deviation from the Raoult's law is observed

Application of secondary ion emission to impurity control in tokamaks

International Nuclear Information System (INIS)

Krauss, A.R.; Gruen, D.M.

1979-01-01

The extent to which high Z impurities enter the plasma of a magnetic confinement fusion device depends on the kinetic energy, angle of emission, and very importantly, the charge state of the ejected material. We have been studying both the fundamental process of secondary ion emission and possible techniques for producing surfaces which give rise to high ion fractions during sputtering, with a view to assessing the potential of this approach to impurity control in tokamaks. By carefully choosing materials exposed to fusion plasmas and by properly modifying the surface it may be possible to insure that nearly all the impurities are ejected as ions. As long as certain gas blanket configurations are avoided and especially if a divertor is used, it should then be possible to remove the impurities before they reach the plasma. The relative merits of a variety of materials are considered with regard to this application

Study on impurity screening in stochastic magnetic boundary of the Large Helical Device

International Nuclear Information System (INIS)

Kobayashi, M.; Morita, S.; Feng, Y.

2008-10-01

The impurity transport characteristics in the scrape-off layer associated with a stochastic magnetic boundary of LHD are analyzed. The remnant islands with very small internal field line pitch in the stochastic region play a key role in reducing the impurity influx. The thermal force driven impurity influx is significantly suppressed when the perpendicular energy flux exceeds the parallel one inside the islands due to the small pitch. Application of the 3D edge transport code, EMC3-EIRENE, confirmed the impurity retention (screening) effect in the edge region. It is also found that the edge surface layers are the most effective region to retain (screen) impurities because of the flow acceleration and plasma cooling via short flux tubes. The carbon emission obtained in experiments is in good agreement with the modelling results, showing the impurity retention (screening) potential of the stochastic magnetic boundary. (author)

Identical bands at normal deformation: Necessity of going beyond the mean-field approach

International Nuclear Information System (INIS)

Sun, Y.; Wu, C.; Feng, D.H.; Egido, J.L.; Guidry, M.

1996-01-01

The validity of BCS theory has been questioned because the appearance of normally deformed identical bands in odd and even nuclei seems to contradict the conventional understanding of the blocking effect. This problem is examined with the projected shell model (PSM), which projects good angular momentum states and includes many-body correlations in both deformation and pairing channels. Satisfactory reproduction of identical band data by the PSM suggests that it may be necessary to go beyond the mean field to obtain a quantitative account of identical bands. copyright 1996 The American Physical Society

Impurity penetration through the stochastic layer near the separatrix in tokamaks

International Nuclear Information System (INIS)

Morozov, D.K.; Herrera, J.J.E.; Rantsev-Kartinov, V.A.

1995-01-01

It is shown that a stochastic layer produced by ripple perturbations near the separatrix in tokamaks, leads to anomalous plasma flow out of the bulk plasma along perturbed field lines, which brings out impurities. This suggests that the stochastic layer may play a cleaning role. There is an opposite process of anomalous impurity diffusion into the plasma. The balance of these two processes defines the impurity concentration in the bulk plasma. copyright 1995 American Institute of Physics

Impact of the Injection Protocol on an Impurity's Stationary State

Science.gov (United States)

Gamayun, Oleksandr; Lychkovskiy, Oleg; Burovski, Evgeni; Malcomson, Matthew; Cheianov, Vadim V.; Zvonarev, Mikhail B.

2018-06-01

We examine stationary-state properties of an impurity particle injected into a one-dimensional quantum gas. We show that the value of the impurity's end velocity lies between zero and the speed of sound in the gas and is determined by the injection protocol. This way, the impurity's constant motion is a dynamically emergent phenomenon whose description goes beyond accounting for the kinematic constraints of the Landau approach to superfluidity. We provide exact analytic results in the thermodynamic limit and perform finite-size numerical simulations to demonstrate that the predicted phenomena are within the reach of the ultracold gas experiments.

Low-Z impurity transport in DIII-D - observations and implications

International Nuclear Information System (INIS)

Wade, M.R.; Houlberg, W.A.; Baylor, L.R.; West, W.P.; Baker, D.R.

2001-01-01

Impurity transport studies on DIII-D have revealed transport phenomena that are qualitatively consistent with that expected from turbulence transport theory in some cases and neoclassical transport theory in other cases. The transport model proposed here, which assumes that the total impurity transport is a linear sum of turbulence-driven transport and neoclassical transport, is shown to reproduce many of these observed features. This transport model is then applied to burn condition calculations, revealing that profile effects associated with neoclassical transport have a large effect on the maximum allowable impurity fraction in machines based on achieving neoclassical transport levels

Impurity transport and plasma rotation in the ISX-B tokamak

International Nuclear Information System (INIS)

Isler, R.C.; Murray, L.E.; Crume, E.C.

1983-01-01

Recent calculations have shown that when external momentum sources and plasma rotation are included in the neoclassical theory, the standard results for impurity transport can be strongly altered. Under appropriate conditions, inward convection is reduced by co-injection and enhanced by counter-injection. In order to examine the theoretical predictions, several observations of impurity transport have been made in the ISX-B tokamak during neutral-beam injection for comparison with the transport seen with Ohmic heating alone. Both intrinsic contaminants and deliberately introduced test impurities display a behaviour that is in qualitative agreement with the predicted beam-driven effects. These correlations are particularly noticeable when the comparisons are made for deuterium when the impurity transport in the Ohmically heated discharges exhibits neoclassical-like characteristics, i.e. accumulation and long confinement times. Similar but smaller effects are observed in beam-heated hydrogen discharges; neoclassical-like behaviour is not seen in Ohmically heated hydrogen sequences. Emphasis has been placed on measuring toroidal plasma rotation, and semiquantitative comparisons with the theories of beam-induced impurity transport have been made. It is possible that radial electric fields other than those associated with momentum transfer and increased anomalous processes during injection could also play a role. (author)

Impurity-defect induced noncentrosymmetricity in nonlinear optical processes

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Noncentrosymmetric nanosize-material processes in cadmium iodide are formed by doping it with the impurity copper. The noncentrosymmetricity in the processes are probed by the observation of the second-order optical susceptibility χ ijk (2) . The value of χ ijk (2) is found to depend fashionably on the impurity content of the nanomaterials. The results also show that a significant enhancement in the noncentrosymmetric response is achieved in nanomaterials with reduced sizes and at low temperatures.

Effect of impurities on vacancy migration energy in Fe-based alloys

International Nuclear Information System (INIS)

Hashimoto, N.; Sakuraya, S.; Tanimoto, J.; Ohnuki, S.

2014-01-01

Effects of impurities, such as carbon, nitrogen, helium and hydrogen, on microstructural evolution in pure iron were investigated by means of a multi-beam electron microscope. Growth rate of dislocation loops were measured to calculate vacancy migration energies. In all irradiation temperature conditions, both the size and the number density of dislocation loops were increased as a function of dose. Irradiation with more impurities showed an increase in the temperature dependence of the dislocation loop growth rate compared to irradiation with little impurities. The in situ experiment indicated that the net migration energy of vacancies could be increased due to trapping by impurities, and the effect of C and N on the migration energy of vacancy would be larger than that of W, V, Ta. Furthermore, H and He would increase vacancy migration energy greater than C and N, as well as W, V, Ta. The density functional theory (DFT), applied to the atomic models of BCC iron, indicated an increase in vacancy migration energy by the trapping of impurity atoms, that is a good agreement with this in situ experiment

Plasma Interactions with Mixed Materials and Impurity Transport

Energy Technology Data Exchange (ETDEWEB)

Rognlien, T. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Beiersdorfer, Peter [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chernov, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Frolov, T. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Magee, E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rudd, R. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Umansky, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-10-28

The project brings together three discipline areas at LLNL to develop advanced capability to predict the impact of plasma/material interactions (PMI) on metallic surfaces in magnetic fusion energy (MFE) devices. These areas are (1) modeling transport of wall impurity ions through the edge plasma to the core plasma, (2) construction of a laser blow-off (LBO) system for injecting precise amounts of metallic atoms into a tokamak plasma, and (3) material science analysis of fundamental processes that modify metallic surfaces during plasma bombardment. The focus is on tungsten (W), which is being used for the ITER divertor and in designs of future MFE devices. In area (1), we have worked with the University of California, San Diego (UCSD) on applications of the UEDGE/DUSTT coupled codes to predict the influx of impurity ions from W dust through the edge plasma, including periodic edge-plasma oscillations, and revived a parallel version of UEDGE to speed up these simulations. In addition, the impurity transport model in the 2D UEDGE code has been implemented into the 3D BOUT++ turbulence/transport code to allow fundamental analysis of the impact of strong plasma turbulence on the impurity transport. In area (2), construction and testing of the LBO injection system has been completed. The original plan to install the LBO on the National Spherical Torus Experiment Upgrade (NSTX-U) at Princeton and its use to validate the impurity transport simulations is delayed owing to NSTX-U being offline for substantial magnetic coil repair period. In area (3), an analytic model has been developed to explain the growth of W tendrils (or fuzz) observed for helium-containing plasmas. Molecular dynamics calculations of W sputtering by W and deuterium (D) ions shows that a spatial blending of interatomic potentials is needed to describe the near-surface and deeper regions of the material.

Plasma Interactions with Mixed Materials and Impurity Transport

International Nuclear Information System (INIS)

Rognlien, T. D.; Beiersdorfer, Peter; Chernov, A.; Frolov, T.; Magee, E.; Rudd, R.; Umansky, M.

2016-01-01

The project brings together three discipline areas at LLNL to develop advanced capability to predict the impact of plasma/material interactions (PMI) on metallic surfaces in magnetic fusion energy (MFE) devices. These areas are (1) modeling transport of wall impurity ions through the edge plasma to the core plasma, (2) construction of a laser blow-off (LBO) system for injecting precise amounts of metallic atoms into a tokamak plasma, and (3) material science analysis of fundamental processes that modify metallic surfaces during plasma bombardment. The focus is on tungsten (W), which is being used for the ITER divertor and in designs of future MFE devices. In area (1), we have worked with the University of California, San Diego (UCSD) on applications of the UEDGE/DUSTT coupled codes to predict the influx of impurity ions from W dust through the edge plasma, including periodic edge-plasma oscillations, and revived a parallel version of UEDGE to speed up these simulations. In addition, the impurity transport model in the 2D UEDGE code has been implemented into the 3D BOUT++ turbulence/transport code to allow fundamental analysis of the impact of strong plasma turbulence on the impurity transport. In area (2), construction and testing of the LBO injection system has been completed. The original plan to install the LBO on the National Spherical Torus Experiment Upgrade (NSTX-U) at Princeton and its use to validate the impurity transport simulations is delayed owing to NSTX-U being offline for substantial magnetic coil repair period. In area (3), an analytic model has been developed to explain the growth of W tendrils (or fuzz) observed for helium-containing plasmas. Molecular dynamics calculations of W sputtering by W and deuterium (D) ions shows that a spatial blending of interatomic potentials is needed to describe the near-surface and deeper regions of the material.

Acoustic band gaps of the woodpile sonic crystal with the simple cubic lattice

Energy Technology Data Exchange (ETDEWEB)

Wu, Liang-Yu; Chen, Lien-Wen, E-mail: chenlw@mail.ncku.edu.t [Department of Mechanical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2011-02-02

This study theoretically and experimentally investigates the acoustic band gap of a three-dimensional woodpile sonic crystal. Such crystals are built by blocks or rods that are orthogonally stacked together. The adjacent layers are perpendicular to each other. The woodpile structure is embedded in air background. Their band structures and transmission spectra are calculated using the finite element method with a periodic boundary condition. The dependence of the band gap on the width of the stacked rods is discussed. The deaf bands in the band structure are observed by comparing with the calculated transmission spectra. The experimental transmission spectra for the {Gamma}-X and {Gamma}-X' directions are also presented. The calculated results are compared with the experimental results.

Correlations between locked modes and impurity influxes

Energy Technology Data Exchange (ETDEWEB)

Fishpool, G M [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking; Lawson, K D [UKAEA Culham Lab., Abingdon (United Kingdom)

1994-07-01

An analysis of pulses that were disturbed by medium Z impurity influxes (Cl, Cr, Fe and Ni) recorded during the 91/92 JET operations, has demonstrated that such influxes can result in MHD modes which subsequently ``lock``. A correlation is found between the power radiated by the influx and the time difference between the start of the influx and the beginning of the locked mode. The growth in the amplitude of the locked mode itself can lead to further impurity influxes. A correlation is noted between intense influxes (superior to 10 MW) and the mode ``unlocking``. (authors). 4 refs., 4 figs.

Interaction between impurities in Ag dilute alloys

International Nuclear Information System (INIS)

Krolas, K.; Wodniecka, B.; Wodniecki, P.; Uniwersytet Jagiellonski, Krakow

1977-01-01

Time dependent perturbed angular correlation measurements of gamma radiation in 111 Cd after 111 In decay were performed in AgPd and AgPt alloys. The concentration of Pd or Pt atoms being the nearest neighbours to the probe atoms is much higher than that one deduced from random impurity distribution. This effect results from the attractive interaction between the In probe atoms and Pt or Pd impurity atoms in silver host lattice. The binding energy of InPd and InPt complexes was measured as 135 +- 9 meV and 171 +- 9 meV, respectively. (author)

Impurity studies in the advanced toroidal facility

International Nuclear Information System (INIS)

Isler, R.C.; Horton, L.D.; Crume, E.C.; Howe, H.C.; Voronov, G.S.

1989-01-01

Impurities have played an important role in the initial stages of operation of the Advanced Toroidal Facility. Cleanup practices have been adequate enough that plasmas heated by ECH only can be operated in a quasi-steady state; however, neutral beam injected plasmas always collapse to a low temperature. It is not clear whether impurity radiation is actually responsible for initiating the collapse, but at the time the stored energy reaches a maximum, there are indications of poloidal asymmetries in radiation from low ionization stages, such as observed in marfes, which could play a dominant role in the plasma evolution. 3 refs., 5 figs

Dynamics of an impurity in a one-dimensional lattice

International Nuclear Information System (INIS)

Massel, F; Kantian, A; Giamarchi, T; Daley, A J; Törmä, P

2013-01-01

We study the non-equilibrium dynamics of an impurity in a harmonic trap that is kicked with a well-defined quasi-momentum, and interacts with a bath of free fermions or interacting bosons in a one-dimensional lattice configuration. Using numerical and analytical techniques we investigate the full dynamics beyond linear response, which allows us to quantitatively characterize states of the impurity in the bath for different parameter regimes. These vary from a tightly bound molecular state in a strongly interacting limit to a polaron (dressed impurity) and a free particle for weak interactions, with composite behaviour in the intermediate regime. These dynamics and different parameter regimes should be readily realizable in systems of cold atoms in optical lattices. (paper)

Quasi-regular impurity distribution driven by charge-density wave

International Nuclear Information System (INIS)

Baldea, I.; Badescu, M.

1991-09-01

The displacive motion of the impurity distribution immersed into the one-dimensional system has recently been studied in detail as one kind of quasi-regularity driven by CDW. As a further investigation of this problem we develop here a microscopical model for a different kind of quasi-regular impurity distribution driven by CDW, consisting of the modulation in the probability of occupied sites. The dependence on impurity concentration and temperature of relevant CDW quantities is obtained. Data reported in the quasi-1D materials NbSe 3 and Ta 2 NiSe 7 (particularly, thermal hysteresis effects at CDW transition) are interpreted in the framework of the present model. Possible similarities to other physical systems are also suggested. (author). 38 refs, 7 figs

PROCESS FOR RECOVERY OF URANIUM VALUES FROM IMPURE SOLUTIONS THEREOF

Science.gov (United States)

Kilner, S.B.

1959-11-01

A process is presented for the recovery of uraninm values from impure solutions which are obtained, for example, by washing residual uranium salt or uranium metal deposits from stainless steel surfaces using an aqueous or certain acidic aqueous solutions. The solutions include uranyl and oxidized iron, chromium, nickel, and copper ions and may contain manganese, zinc, and silver ions. In accordance with one procedure. the uranyl ions are reduced to the uranous state, and the impurity ions are complexed with cyanide under acidic conditions. The solution is then treated with ammonium hydroxide or alkali metal hydroxide to precipitate uranous hydroxide away from the complexed impurity ions in the solution. Alternatively, an excess of alkali metal cyanide is added to the reduced solution until the solution becomes sufficiently alkaline for the uranons hydroxide to precipitate. An essential feature in operating the process is in maintaining the pH of the solution sufficiently acid during the complexing operation to prevent the precipitation of the impurity metal hydroxides.

Novel sound phenomena in superfluid helium in aerogel and other impure superfluids

International Nuclear Information System (INIS)

Brusov, Peter; Brusov, Paul; Lawes, Gavin; Lee, Chong; Matsubara, Akira; Ishikawa, Osamu; Majumdar, Pinaki

2003-01-01

During the last decade new techniques for producing impure superfluids with unique properties have been developed. This new class of systems includes superfluid helium confined to aerogel, HeII with different impurities (D 2 , N 2 , Ne, Kr), superfluids in Vycor glasses, and watergel. These systems exhibit very unusual properties including unexpected acoustic features. We discuss the sound properties of these systems and show that sound phenomena in impure superfluids are modified from those in pure superfluids. We calculate the coupling between temperature and pressure oscillations for impure superfluids and for superfluid He in aerogel. We show that the coupling between these two sound modes is governed either by c∂ρ/∂c or σρ a ρ s (for aerogel) rather than thermal expansion coefficient ∂ρ/∂T, which is enormously small in pure superfluids. This replacement plays a fundamental role in all sound phenomena in impure superfluids. It enhances the coupling between the two sound modes that leads to the existence of such phenomena as the slow mode and heat pulse propagation with the velocity of first sound observed in superfluids in aerogel. This means that it is possible to observe in impure superfluids such unusual sound phenomena as slow pressure (density) waves and fast temperature (entropy) waves. The enhancement of the coupling between the two sound modes decreases the threshold values for nonlinear processes as compared to pure superfluids. Sound conversion, which has been observed in pure superfluids only by shock waves should be observed at moderate sound amplitude in impure superfluids. Cerenkov emission of second sound by first sound (which never been observed in pure superfluids) could be observed in impure superfluids

Introduction to the viewpoint set on shear bands

International Nuclear Information System (INIS)

Hutchinson, J.W.

1984-01-01

Recent work aimed at improving our understanding of shear banding and flow localization as modes of deformation and failure is summarized in the six viewpoint articles which follow. For the most part, the emphasis here is on the observation and analysis of shear banding in metals, but active efforts are also underway to understand the role of shear bands in the deformation and failure of soils and rocks. There is a tendency to regard shear bands as a failure mode, as indeed they often are. But extensive straining under highly constrained conditions such as rolling can give rise to profuse flow localization into shear bands which can be regarded as microscopic in the sense that their extent is on the scale of the grains rather than the overall dimensions of the block of material being deformed. Hatherly and Malin describe in detail the observation of such bands and emphasize that they should be considered as a mode of deformation under these circumstances. They relate the formation of the bands to microstructural aspects and discuss their role in the development of recrystallization textures. It will be clear from reading the articles in this viewpoint set that the beginnings of a quantitative theory of shear banding is in place. Continued progress will require parallel developments in constitutive theory and experimental observation. Moreover, basic questions remain to be explored related to the spatial development of the shear bands, their mutual interaction, their development into a failure mode, and how these are influenced by factors such as overall deformational constraint, rate of straining, and temperature

Spectroscopic study of sources and control of impurities in TMX-U. Revision 1

International Nuclear Information System (INIS)

Yu, T.L.; Allen, S.L.; Moos, H.W.

1984-11-01

Two absolutely calibrated euv instruments have been used to study the impurity characteristics in the Tandem Mirror Experiment-Upgrade (TMX-U). One instrument is a spectrograph that measures the time histories of several impurity emission lines in a single plasma shot. The other instrument is a monochromator that measures time-resolved radial profiles of a particular impurity emission line. The common intrinsic impurities found in TMX-U are C, N, O, and Ti. It has been shown that a large fraction of oxygen and nitrogen in the plasma is associated with the neutral beams. The plasma wall is the main source of carbon. In general, the concentration of each of the impurities is low (<1%), and the power radiated by them is less than 10 kW, which is a small portion of the total input power to the plasma. The concentrations of the impurities can be reduced substantially by glow discharge cleaning and titanium gettering

Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity.

Science.gov (United States)

Karnatak, Paritosh; Goswami, Srijit; Kochat, Vidya; Pal, Atindra Nath; Ghosh, Arindam

2014-07-11

The interaction between the Fermi sea of conduction electrons and a nonadiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude ≈e(2)/h at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

Impurity enrichment and radiative enhancement using induced SOL flow in DIII-D

International Nuclear Information System (INIS)

Wade, M.R.; West, W.P.; Wood, R.D.

1998-07-01

Experiments on DIII-D have demonstrated the efficacy of using induced scrap-off-layer (SOL) flow to preferentially enrich impurities in the divertor plasma. This SOL floe is produced through simultaneous deuterium gas injection at the midplane and divertor exhaust. Using this SOL flow, an improvement in enrichment (defined as the ratio of impurity fraction in the divertor to that in the plasma core) has been observed for all impurities in trace-level experiments (i.e., impurity level is non-perturbative), with the degree of improvement increasing with impurity atomic number. In the case of argon, exhaust gas enrichment using modest SOL flow is as high as 17. Using this induced SOL flow technique and argon injection, radiative plasmas have been produced that combine high radiation losses (P rad /P input > 70%), low core fuel dilution (Z eff E > 1.0 τ E,ITER93H )

Nonmagnetic impurities in magnetic superconductors