WorldWideScience

Sample records for bistable switching devices

  1. Microscopic observation of zenithal bistable switching in nematic devices with different surface relief structures

    International Nuclear Information System (INIS)

    Uche, C; Elston, S J; Parry-Jones, L A

    2005-01-01

    Nematic liquid crystals have been shown to exhibit zenithal electro-optic bistability in devices containing sinusoidal and deformed sinusoidal gratings. Recently it has been shown that zenithal bistable states can also be supported at isolated edges of square gratings. In this paper, we present microscopic observations of bistability in cells containing sinusoidal gratings and long-pitch square gratings. We have also investigated a novel display based on square wells. High frame-rate video microscopy was used to obtain time-sequenced images when the devices were switched with monopolar pulses. These show that zenithal bistable switching can occur by two different processes: (i) domain growth (observed in cells containing sinusoidal gratings) and (ii) homogenous switching (observed in cells containing isolated edges

  2. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  3. Bistable switching in supercritical n+-n-n+GaAs transferred electron devices

    DEFF Research Database (Denmark)

    Jøndrup, Peter; Jeppesen, Palle; Jeppson, Bert

    1976-01-01

    : 1) cathode-triggered traveling domain; 2) cathode-triggered accumulation layer; 3) anode-triggered domain. Relative current drops up to 40 percent, and switching times down to 60 ps are obtained in low-duty-cycle pulsed experiments with threshold currents around 400 mA. Optimum device parameters...

  4. Organic bistable light-emitting devices

    Science.gov (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  5. Hybrid optoelectronic device with multiple bistable outputs

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Jin Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.are, E-mail: granieri@rose-hulma.edu, E-mail: siahmako@rose-hulma.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  6. Bistable fluidic valve is electrically switched

    Science.gov (United States)

    Fiet, O.; Salvinski, R. J.

    1970-01-01

    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  7. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  8. Two Bistable Switches Govern M Phase Entry.

    Science.gov (United States)

    Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla

    2016-12-19

    The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Solid state bistable power switch

    Science.gov (United States)

    Bartko, J.; Shulman, H.

    1970-01-01

    Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.

  10. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  11. Bistable laser device with multiple coupled active vertical-cavity resonators

    Science.gov (United States)

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-08-19

    A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

  12. Bistable soliton states and switching in doubly inhomogeneously ...

    Indian Academy of Sciences (India)

    Dec. 2001 physics pp. 969–979. Bistable soliton states and switching in doubly inhomogeneously doped fiber couplers. AJIT KUMAR. Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110 016, India. Abstract. Switching between the bistable soliton states in a doubly and inhomogeneously doped.

  13. A genetic bistable switch utilizing nonlinear protein degradation.

    Science.gov (United States)

    Huang, Daniel; Holtz, William J; Maharbiz, Michel M

    2012-07-09

    Bistability is a fundamental property in engineered and natural systems, conferring the ability to switch and retain states. Synthetic bistable switches in prokaryotes have mainly utilized transcriptional components in their construction. Using both transcriptional and enzymatic components, creating a hybrid system, allows for wider bistable parameter ranges in a circuit. In this paper, we demonstrate a tunable family of hybrid bistable switches in E. coli using both transcriptional components and an enzymatic component. The design contains two linked positive feedback loops. The first loop utilizes the lambda repressor, CI, and the second positive feedback loop incorporates the Lon protease found in Mesoplasma florum (mf-Lon). We experimentally tested for bistable behavior in exponential growth phase, and found that our hybrid bistable switch was able to retain its state in the absence of an input signal throughout 40 cycles of cell division. We also tested the transient behavior of our switch and found that switching speeds can be tuned by changing the expression rate of mf-Lon. To our knowledge, this work demonstrates the first use of dynamic expression of an orthogonal and heterologous protease to tune a nonlinear protein degradation circuit. The hybrid switch is potentially a more robust and tunable topology for use in prokaryotic systems.

  14. Bulk chirality effect for symmetric bistable switching of liquid crystals on topologically self-patterned degenerate anchoring surface.

    Science.gov (United States)

    Park, Min-Kyu; Joo, Kyung-Il; Kim, Hak-Rin

    2017-06-26

    We demonstrate a bistable switching liquid crystal (LC) mode utilizing a topologically self-structured dual-groove surface for degenerated easy axes of LC anchoring. In our study, the effect of the bulk elastic distortion of the LC directors on the bistable anchoring surface is theoretically analyzed for balanced bistable states based on a free energy diagram. By adjusting bulk LC chirality, we developed ideally symmetric and stable bistable anchoring and switching properties, which can be driven by a low in-plane pulsed field of about 0.7 V/µm. The fabricated device has a contrast ratio of 196:1.

  15. Genes contribute to the switching dynamics of bistable perception.

    Science.gov (United States)

    Shannon, Robert W; Patrick, Christopher J; Jiang, Yi; Bernat, Edward; He, Sheng

    2011-03-09

    Ordinarily, the visual system provides an unambiguous representation of the world. However, at times alternative plausible interpretations of a given stimulus arise, resulting in a dynamic perceptual alternation of the differing interpretations, commonly referred to as bistable or rivalrous perception. Recent research suggests that common neural mechanisms may be involved in the dynamics of very different types of bistable phenomena. Further, evidence has emerged that genetic factors may be involved in determining the rate of switch for at least one form of bistable perception, known as binocular rivalry. The current study evaluated whether genetic factors contribute to the switching dynamics for distinctly different variants of bistable perception in the same participant sample. Switching rates were recorded for MZ and DZ twin participants in two different bistable perception tasks, binocular rivalry and the Necker Cube. Strong concordance in switching rates across both tasks was evident for MZ but not DZ twins, indicating that genetic factors indeed contribute to the dynamics of multiple forms of bistable perception.

  16. Design of a bistable switch to control cellular uptake.

    Science.gov (United States)

    Oyarzún, Diego A; Chaves, Madalena

    2015-12-06

    Bistable switches are widely used in synthetic biology to trigger cellular functions in response to environmental signals. All bistable switches developed so far, however, control the expression of target genes without access to other layers of the cellular machinery. Here, we propose a bistable switch to control the rate at which cells take up a metabolite from the environment. An uptake switch provides a new interface to command metabolic activity from the extracellular space and has great potential as a building block in more complex circuits that coordinate pathway activity across cell cultures, allocate metabolic tasks among different strains or require cell-to-cell communication with metabolic signals. Inspired by uptake systems found in nature, we propose to couple metabolite import and utilization with a genetic circuit under feedback regulation. Using mathematical models and analysis, we determined the circuit architectures that produce bistability and obtained their design space for bistability in terms of experimentally tuneable parameters. We found an activation-repression architecture to be the most robust switch because it displays bistability for the largest range of design parameters and requires little fine-tuning of the promoters' response curves. Our analytic results are based on on-off approximations of promoter activity and are in excellent qualitative agreement with simulations of more realistic models. With further analysis and simulation, we established conditions to maximize the parameter design space and to produce bimodal phenotypes via hysteresis and cell-to-cell variability. Our results highlight how mathematical analysis can drive the discovery of new circuits for synthetic biology, as the proposed circuit has all the hallmarks of a toggle switch and stands as a promising design to control metabolic phenotypes across cell cultures. © 2015 The Author(s).

  17. Models of charge transport and transfer in molecular switch tunnel junctions of bistable catenanes and rotaxanes

    International Nuclear Information System (INIS)

    Flood, Amar H.; Wong, Eric W.; Stoddart, J. Fraser

    2006-01-01

    The processes by which charge transfer can occur play a foundational role in molecular electronics. Here we consider simplified models of the transfer processes that could be present in bistable molecular switch tunnel junction (MSTJ) devices during one complete cycle of the device from its low- to high- and back to low-conductance state. The bistable molecular switches, which are composed of a monolayer of either switchable catenanes or rotaxanes, exist in either a ground-state co-conformation or a metastable one in which the conduction properties of the two co-conformations, when measured at small biases (+0.1 V), are significantly different irrespective of whether transport is dominated by tunneling or hopping. The voltage-driven generation (±2 V) of molecule-based redox states, which are sufficiently long-lived to allow the relative mechanical movements necessary to switch between the two co-conformations, rely upon unequal charge transfer rates on to and/or off of the molecules. Surface-enhanced Raman spectroscopy has been used to image the ground state of the bistable rotaxane in MSTJ-like devices. Consideration of these models provide new ways of looking at molecular electronic devices that rely, not only on nanoscale charge-transport, but also upon the bustling world of molecular motion in mechanically interlocked bistable molecules

  18. Bistable switching in dual-frequency liquid crystals

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Barnik, M I [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2006-06-15

    Various bistable switching modes in nematic liquid crystals with frequency inversion of the sign of dielectric anisotropy are revealed and investigated. Switching between states with different helicoidal distributions of the director field of a liquid crystal, as well as between uniform and helicoidal states, is realized by dual-frequency waveforms of a driving voltage. A distinctive feature of the dual-frequency switching is that the uniform planar distribution of the director field may correspond to a thermodynamically equilibrium state, and the chirality of an LC is not a necessary condition for switching to a helicoidal state.

  19. On-Demand Final State Control of a Surface-Bound Bistable Single Molecule Switch.

    Science.gov (United States)

    Garrido Torres, José A; Simpson, Grant J; Adams, Christopher J; Früchtl, Herbert A; Schaub, Renald

    2018-04-12

    Modern electronic devices perform their defined action because of the complete reliability of their individual active components (transistors, switches, diodes, and so forth). For instance, to encode basic computer units (bits) an electrical switch can be used. The reliability of the switch ensures that the desired outcome (the component's final state, 0 or 1) can be selected with certainty. No practical data storage device would otherwise exist. This reliability criterion will necessarily need to hold true for future molecular electronics to have the opportunity to emerge as a viable miniaturization alternative to our current silicon-based technology. Molecular electronics target the use of single-molecules to perform the actions of individual electronic components. On-demand final state control over a bistable unimolecular component has therefore been one of the main challenges in the past decade (1-5) but has yet to be achieved. In this Letter, we demonstrate how control of the final state of a surface-supported bistable single molecule switch can be realized. On the basis of the observations and deductions presented here, we further suggest an alternative strategy to achieve final state control in unimolecular bistable switches.

  20. A Precise Temperature-Responsive Bistable Switch Controlling Yersinia Virulence.

    Science.gov (United States)

    Nuss, Aaron Mischa; Schuster, Franziska; Roselius, Louisa; Klein, Johannes; Bücker, René; Herbst, Katharina; Heroven, Ann Kathrin; Pisano, Fabio; Wittmann, Christoph; Münch, Richard; Müller, Johannes; Jahn, Dieter; Dersch, Petra

    2016-12-01

    Different biomolecules have been identified in bacterial pathogens that sense changes in temperature and trigger expression of virulence programs upon host entry. However, the dynamics and quantitative outcome of this response in individual cells of a population, and how this influences pathogenicity are unknown. Here, we address these questions using a thermosensing virulence regulator of an intestinal pathogen (RovA of Yersinia pseudotuberculosis) as a model. We reveal that this regulator is part of a novel thermoresponsive bistable switch, which leads to high- and low-invasive subpopulations within a narrow temperature range. The temperature range in which bistability is observed is defined by the degradation and synthesis rate of the regulator, and is further adjustable via a nutrient-responsive regulator. The thermoresponsive switch is also characterized by a hysteretic behavior in which activation and deactivation occurred on vastly different time scales. Mathematical modeling accurately mirrored the experimental behavior and predicted that the thermoresponsiveness of this sophisticated bistable switch is mainly determined by the thermo-triggered increase of RovA proteolysis. We further observed RovA ON and OFF subpopulations of Y. pseudotuberculosis in the Peyer's patches and caecum of infected mice, and that changes in the RovA ON/OFF cell ratio reduce tissue colonization and overall virulence. This points to a bet-hedging strategy in which the thermoresponsive bistable switch plays a key role in adapting the bacteria to the fluctuating conditions encountered as they pass through the host's intestinal epithelium and suggests novel strategies for the development of antimicrobial therapies.

  1. A Precise Temperature-Responsive Bistable Switch Controlling Yersinia Virulence.

    Directory of Open Access Journals (Sweden)

    Aaron Mischa Nuss

    2016-12-01

    Full Text Available Different biomolecules have been identified in bacterial pathogens that sense changes in temperature and trigger expression of virulence programs upon host entry. However, the dynamics and quantitative outcome of this response in individual cells of a population, and how this influences pathogenicity are unknown. Here, we address these questions using a thermosensing virulence regulator of an intestinal pathogen (RovA of Yersinia pseudotuberculosis as a model. We reveal that this regulator is part of a novel thermoresponsive bistable switch, which leads to high- and low-invasive subpopulations within a narrow temperature range. The temperature range in which bistability is observed is defined by the degradation and synthesis rate of the regulator, and is further adjustable via a nutrient-responsive regulator. The thermoresponsive switch is also characterized by a hysteretic behavior in which activation and deactivation occurred on vastly different time scales. Mathematical modeling accurately mirrored the experimental behavior and predicted that the thermoresponsiveness of this sophisticated bistable switch is mainly determined by the thermo-triggered increase of RovA proteolysis. We further observed RovA ON and OFF subpopulations of Y. pseudotuberculosis in the Peyer's patches and caecum of infected mice, and that changes in the RovA ON/OFF cell ratio reduce tissue colonization and overall virulence. This points to a bet-hedging strategy in which the thermoresponsive bistable switch plays a key role in adapting the bacteria to the fluctuating conditions encountered as they pass through the host's intestinal epithelium and suggests novel strategies for the development of antimicrobial therapies.

  2. Bistable switches control memory and plasticity in cellular differentiation

    Science.gov (United States)

    Wang, Lei; Walker, Brandon L.; Iannaccone, Stephen; Bhatt, Devang; Kennedy, Patrick J.; Tse, William T.

    2009-01-01

    Development of stem and progenitor cells into specialized tissues in multicellular organisms involves a series of cell fate decisions. Cellular differentiation in higher organisms is generally considered irreversible, and the idea of developmental plasticity in postnatal tissues is controversial. Here, we show that inhibition of mitogen-activated protein kinase (MAPK) in a human bone marrow stromal cell-derived myogenic subclone suppresses their myogenic ability and converts them into satellite cell-like precursors that respond to osteogenic stimulation. Clonal analysis of the induced osteogenic response reveals ultrasensitivity and an “all-or-none” behavior, hallmarks of a bistable switch mechanism with stochastic noise. The response demonstrates cellular memory, which is contingent on the accumulation of an intracellular factor and can be erased by factor dilution through cell divisions or inhibition of protein synthesis. The effect of MAPK inhibition also exhibits memory and appears to be controlled by another bistable switch further upstream that determines cell fate. Once the memory associated with osteogenic differentiation is erased, the cells regain their myogenic ability. These results support a model of cell fate decision in which a network of bistable switches controls inducible production of lineage-specific differentiation factors. A competitive balance between these factors determines cell fate. Our work underscores the dynamic nature of cellular differentiation and explains mechanistically the dual properties of stability and plasticity associated with the process. PMID:19366677

  3. Thiol-modified MoS2 nanosheets as a functional layer for electrical bistable devices

    Science.gov (United States)

    Li, Guan; Tan, Fenxue; Lv, Bokun; Wu, Mengying; Wang, Ruiqi; Lu, Yue; Li, Xu; Li, Zhiqiang; Teng, Feng

    2018-01-01

    Molybdenum disulfide nanosheets have been synthesized by one-pot method using 1-ODT as sulfur source and surfactant. The structure, morphology and optical properties of samples were investigated by XRD, FTIR, Abs spectrum and TEM patterns. The XRD pattern indicated that the as-obtained MoS2 belong to hexagonal system. The as-obtained MoS2 nanosheets blending with PVK could be used to fabricate an electrically bistable devices through a simple spin-coating method and the device exhibited an obvious electrical bistability properties. The charge transport mechanism of the device was discussed based on the filamentary switching models.

  4. High-resolution bistable nematic liquid crystal device realized on orientational surface patterns

    International Nuclear Information System (INIS)

    Kim, Jong-Hyun; Yoneya, Makoto; Yokoyama, Hiroshi

    2003-01-01

    The four-fold symmetry of a checkerboard-like surface alignment consisted of square domains arrived at the macroscopic orientational bistability of nematic liquid crystals. Switching between the two orientations took place with an appropriate electric field. Here the threshold field of bistable switching decreased as temperature increased, and the light could heat only the selected region in the cell including a light-absorbing medium. Irradiating the laser concurrently with an electric field, we addressed a selected region in the alignment pattern without the disturbance of neighboring regions. Extending this process, we realized an extremely fine bistable device of nematic liquid crystal with a pixel size down to about 2 μm

  5. Atom-loss-induced quantum optical bi-stability switch

    International Nuclear Information System (INIS)

    Wu Bao-Jun; Cui Fu-Cheng

    2012-01-01

    We investigate the nonlinear dynamics of a system composed of a cigar-shaped Bose—Einstein condensate and an optical cavity with the two sides coupled dispersively. By adopting discrete-mode approximation for the condensate, taking atom loss as a necessary part of the model to analyze the evolution of the system, while using trial and error method to find out steady states of the system as a reference, numerical simulation demonstrates that with a constant pump, atom loss will trigger a quantum optical bi-stability switch, which predicts a new interesting phenomenon for experiments to verify

  6. Towards an optimal model for a bistable nematic liquid crystal display device

    KAUST Repository

    Cummings, L. J.

    2013-03-13

    Bistable liquid crystal displays offer the potential for considerable power savings compared with conventional (monostable) LCDs. The existence of two stable field-free states that are optically distinct means that contrast can be maintained in a display without an externally applied electric field. An applied field is required only to switch the device from one state to the other, as needed. In this paper we examine a theoretical model of a possible bistable device, originally proposed by Cummings and Richardson (Euro J Appl Math 17:435-463 2006), and explore means by which it may be optimized, in terms of optical contrast, manufacturing considerations, switching field strength, and switching times. The compromises inherent in these conflicting design criteria are discussed. © 2013 Springer Science+Business Media Dordrecht.

  7. Linear population allocation by bistable switches in response to transient stimulation.

    Science.gov (United States)

    Srimani, Jaydeep K; Yao, Guang; Neu, John; Tanouchi, Yu; Lee, Tae Jun; You, Lingchong

    2014-01-01

    Many cellular decision processes, including proliferation, differentiation, and phenotypic switching, are controlled by bistable signaling networks. In response to transient or intermediate input signals, these networks allocate a population fraction to each of two distinct states (e.g. OFF and ON). While extensive studies have been carried out to analyze various bistable networks, they are primarily focused on responses of bistable networks to sustained input signals. In this work, we investigate the response characteristics of bistable networks to transient signals, using both theoretical analysis and numerical simulation. We find that bistable systems exhibit a common property: for input signals with short durations, the fraction of switching cells increases linearly with the signal duration, allowing the population to integrate transient signals to tune its response. We propose that this allocation algorithm can be an optimal response strategy for certain cellular decisions in which excessive switching results in lower population fitness.

  8. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  9. A Redox-Active Bistable Molecular Switch Mounted inside a Metal-Organic Framework.

    Science.gov (United States)

    Chen, Qishui; Sun, Junling; Li, Peng; Hod, Idan; Moghadam, Peyman Z; Kean, Zachary S; Snurr, Randall Q; Hupp, Joseph T; Farha, Omar K; Stoddart, J Fraser

    2016-11-02

    We describe the incorporation of a bistable mechanically interlocked molecule (MIM) into a robust Zr-based metal-organic framework (MOF), NU-1000, by employing a post-synthetic functionalization protocol. On average, close to two bistable [2]catenanes can be incorporated per repeating unit of the hexagonal channels of NU-1000. The reversible redox-switching of the bistable [2]catenanes is retained inside the MOF, as evidenced by solid-state UV-vis-NIR reflectance spectroscopy and cyclic voltammetry. This research demonstrates that bistable MIMs are capable of exhibiting robust dynamics inside the nanopores of a MOF.

  10. Bistable polarization switching in a continuous wave ruby laser

    Science.gov (United States)

    Lawandy, N. M.; Afzal, R. Sohrab

    1988-01-01

    Bistability in the output power, polarization state, and mode volume of an argon-ion laser pumped single mode ruby laser at 6943 A has been observed. The laser operates in a radially confined mode which exhibits hysteresis and bistability only when the pump polarization is parallel to the c-axis.

  11. Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

    Science.gov (United States)

    Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

    2017-03-01

    Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

  12. Switching process between bistable positons of multiquantum flux tubes in a thin-film type I superconductor

    International Nuclear Information System (INIS)

    Parisi, J.; Huebener, R.P.; Muhlemeier, B.

    1983-01-01

    A superconducting memory device based on a bistable vortex position represents an interesting storage medium for future Josephson computers. In order to study the operational mode of such a single-flux quantum memory cell, we use as a model system multiquantum flux tubes in a thin-film type I superconductor (Pb). By employing high-resolution stroboscopic magnetooptical flux detection, we are able to globally visualize both spatial and temporal behavior of rapidly switching individual flux tubes. All experimental results agree reasonably well with theoretical model considerations of the energy balance during the elementary switching process

  13. Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive Switching.

    Science.gov (United States)

    Li, Lei; Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Wen, Dianzhong; Bai, Xuduo

    2015-12-01

    An undoped organic small-molecule 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) and a kind of nanocomposite blending poly(methyl methacrylate) (PMMA) into PBD are employed to implement bistable resistive switching. For the bistable resistive switching indium tin oxide (ITO)/PBD/Al, its ON/OFF current ratio can touch 6. What is more, the ON/OFF current ratio, approaching to 10(4), is available due to the storage layer PBD:PMMA with the chemical composition 1:1 in the bistable resistive switching ITO/PBD:PMMA/Al. The capacity, data retention of more than 1 year and endurance performance (>10(4) cycles) of ITO/PBD:PMMA(1:1)/Al, exhibits better stability and reliability of the samples, which underpins the technique and application of organic nonvolatile memory.

  14. Delay induced stability switch, multitype bistability and chaos in an intraguild predation model.

    Science.gov (United States)

    Shu, Hongying; Hu, Xi; Wang, Lin; Watmough, James

    2015-12-01

    In many predator-prey models, delay has a destabilizing effect and induces oscillations; while in many competition models, delay does not induce oscillations. By analyzing a rather simple delayed intraguild predation model, which combines both the predator-prey relation and competition, we show that delay in intraguild predation models promotes very complex dynamics. The delay can induce stability switches exhibiting a destabilizing role as well as a stabilizing role. It is shown that three types of bistability are possible: one stable equilibrium coexists with another stable equilibrium (node-node bistability); one stable equilibrium coexists with a stable periodic solution (node-cycle bistability); one stable periodic solution coexists with another stable periodic solution (cycle-cycle bistability). Numerical simulations suggest that delay can also induce chaos in intraguild predation models.

  15. A bistable switch in dynamic thiodepsipeptide folding and template-directed ligation.

    Science.gov (United States)

    Mukherjee, Rakesh; Cohen-Luria, Rivka; Wagner, Nathaniel; Ashkenasy, Gonen

    2015-10-12

    Bistable reaction networks provide living cells with chemically controlled mechanisms for long-term memory storage. Such networks are also often switchable and can be flipped from one state to the other. We target here a major challenge in systems chemistry research, namely developing synthetic, non-enzymatic, networks that mimic such a complex function. Therefore, we describe a dynamic network that depending on initial thiodepsipeptide concentrations leads to one of two distinct steady states. This bistable system is readily switched by applying the appropriate stimuli. The relationship between the reaction network topology and its capacity to invoke bistability is then analyzed by control experiments and theory. We suggest that demonstrating bistable behavior using synthetic networks further highlights their possible role in early evolution, and may shine light on potential utility for novel applications, such as chemical memories. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  17. Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C60 molecules embedded in a polymethyl methacrylate layer

    International Nuclear Information System (INIS)

    Cho, Sung Hwan; Lee, Dong Ik; Jung, Jae Hun; Kim, Tae Whan

    2009-01-01

    Current-voltage (I-V) measurements on Al/fullerene (C 60 ) molecules embedded in polymethyl methacrylate/Al devices at 300 K showed a current bistability due to the existence of the C 60 molecules. The on/off ratio of the current bistability for the memory devices was as large as 10 3 . The retention time of the devices was above 2.5 x 10 4 s at room temperature, and cycling endurance tests on these devices indicated that the ON and OFF currents showed no degradation until 50 000 cycles. Carrier transport mechanisms for the nonvolatile bistable devices are described on the basis of the I-V experimental and fitting results.

  18. What is refractive optical bistability

    International Nuclear Information System (INIS)

    Dzhehov, Tomislav

    1993-01-01

    The basic elements of the theory of refractive optical bistability, assuming mediums with linear absorption are given. Special attention is paid to bistable etalons of semiconductor materials an oxide glasses, since some of them are considered as promising components for optical bistability applications. The design optimization of such devices for minimum switching intensity is analyzed. Computer simulation of the transfer characteristic recording for two InSb etalons is presented. (author)

  19. Design methodology for all-optical bistable switches based on a plasmonic resonator sandwiched between dielectric waveguides

    International Nuclear Information System (INIS)

    Xiang, Yinxiao; Cai, Wei; Wang, Lei; Ying, Cuifeng; Zhang, Xinzheng; Xu, Jingjun

    2014-01-01

    We present a bistable device consisting of a Bragg grating resonator with a Kerr medium sandwiched between two dielectric slab waveguides. The resonator is situated in a nanometer-scaled metal–insulator–metal plasmonic waveguide. Due to the dimensional confinement from the dielectric waveguide to the nanoscaled plasmonic waveguide, electric fields are enhanced greatly, which will further reduce the threshold value. Moreover, a semi-analytic method, based on the impedance theory and the transfer matrix method, is developed to study the transmission and reflection spectra as well as the bistability loop of such a switch. Our method is fast and accurate, as confirmed by the finite-difference time-domain simulation. (invited paper)

  20. Switching between bistable states in a discrete nonlinear model with long-range dispersion

    DEFF Research Database (Denmark)

    Johansson, Magnus; Gaididei, Yuri B.; Christiansen, Peter Leth

    1998-01-01

    In the framework of a discrete nonlinear Schrodinger equation with long-range dispersion, we propose a general mechanism for obtaining a controlled switching between bistable localized excitations. We show that the application of a spatially symmetric kick leads to the excitation of an internal...

  1. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    Science.gov (United States)

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  2. Designing a stochastic genetic switch by coupling chaos and bistability

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiang [State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ouyang, Qi [State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Center for Quantitative Biology, Peking University, Beijing 100871 (China); The Peking-Tsinghua Center for Life Sciences, Beijing 100871 (China); Wang, Hongli, E-mail: hlwang@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Center for Quantitative Biology, Peking University, Beijing 100871 (China)

    2015-11-15

    In stem cell differentiation, a pluripotent stem cell becomes progressively specialized and generates specific cell types through a series of epigenetic processes. How cells can precisely determine their fate in a fluctuating environment is a currently unsolved problem. In this paper, we suggest an abstract gene regulatory network to describe mathematically the differentiation phenomenon featuring stochasticity, divergent cell fates, and robustness. The network consists of three functional motifs: an upstream chaotic motif, a buffering motif of incoherent feed forward loop capable of generating a pulse, and a downstream motif which is bistable. The dynamic behavior is typically a transient chaos with fractal basin boundaries. The trajectories take transiently chaotic journeys before divergently settling down to the bistable states. The ratio of the probability that the high state is achieved to the probability that the low state is reached can maintain a constant in a population of cells with varied molecular fluctuations. The ratio can be turned up or down when proper parameters are adjusted. The model suggests a possible mechanism for the robustness against fluctuations that is prominently featured in pluripotent cell differentiations and developmental phenomena.

  3. Designing a stochastic genetic switch by coupling chaos and bistability.

    Science.gov (United States)

    Zhao, Xiang; Ouyang, Qi; Wang, Hongli

    2015-11-01

    In stem cell differentiation, a pluripotent stem cell becomes progressively specialized and generates specific cell types through a series of epigenetic processes. How cells can precisely determine their fate in a fluctuating environment is a currently unsolved problem. In this paper, we suggest an abstract gene regulatory network to describe mathematically the differentiation phenomenon featuring stochasticity, divergent cell fates, and robustness. The network consists of three functional motifs: an upstream chaotic motif, a buffering motif of incoherent feed forward loop capable of generating a pulse, and a downstream motif which is bistable. The dynamic behavior is typically a transient chaos with fractal basin boundaries. The trajectories take transiently chaotic journeys before divergently settling down to the bistable states. The ratio of the probability that the high state is achieved to the probability that the low state is reached can maintain a constant in a population of cells with varied molecular fluctuations. The ratio can be turned up or down when proper parameters are adjusted. The model suggests a possible mechanism for the robustness against fluctuations that is prominently featured in pluripotent cell differentiations and developmental phenomena.

  4. Brain activity dynamics in human parietal regions during spontaneous switches in bistable perception.

    Science.gov (United States)

    Megumi, Fukuda; Bahrami, Bahador; Kanai, Ryota; Rees, Geraint

    2015-02-15

    The neural mechanisms underlying conscious visual perception have been extensively investigated using bistable perception paradigms. Previous functional magnetic resonance imaging (fMRI) and transcranial magnetic stimulation (TMS) studies suggest that the right anterior superior parietal (r-aSPL) and the right posterior superior parietal lobule (r-pSPL) have opposite roles in triggering perceptual reversals. It has been proposed that these two areas are part of a hierarchical network whose dynamics determine perceptual switches. However, how these two parietal regions interact with each other and with the rest of the brain during bistable perception is not known. Here, we investigated such a model by recording brain activity using fMRI while participants viewed a bistable structure-from-motion stimulus. Using dynamic causal modeling (DCM), we found that resolving such perceptual ambiguity was specifically associated with reciprocal interactions between these parietal regions and V5/MT. Strikingly, the strength of bottom-up coupling between V5/MT to r-pSPL and from r-pSPL to r-aSPL predicted individual mean dominance duration. Our findings are consistent with a hierarchical predictive coding model of parietal involvement in bistable perception and suggest that visual information processing underlying spontaneous perceptual switches can be described as changes in connectivity strength between parietal and visual cortical regions. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

  5. Stochastic stabilization of phenotypic States: the genetic bistable switch as a case study.

    Science.gov (United States)

    Weber, Marc; Buceta, Javier

    2013-01-01

    We study by means of analytical calculation and stochastic simulations how intrinsic noise modifies the bifurcation diagram of gene regulatory processes that can be effectively described by the Langevin formalism. In a general context, our study raises the intriguing question of how biochemical fluctuations redesign the epigenetic landscape in differentiation processes. We have applied our findings to a general class of regulatory processes that includes the simplest case that displays a bistable behavior and hence phenotypic variability: the genetic auto-activating switch. Thus, we explain why and how the noise promotes the stability of the low-state phenotype of the switch and show that the bistable region is extended when increasing the intensity of the fluctuations. This phenomenology is found in a simple one-dimensional model of the genetic switch as well as in a more detailed model that takes into account the binding of the protein to the promoter region. Altogether, we prescribe the analytical means to understand and quantify the noise-induced modifications of the bifurcation points for a general class of regulatory processes where the genetic bistable switch is included.

  6. Order reconstruction phenomena and temperature-driven dynamics in a 3D zenithally bistable device

    KAUST Repository

    Raisch, A.

    2014-07-01

    We model the zenithally bistable device (ZBD) in three dimensions (3D), within the Landau-de Gennes theory, and find three stable static states in 3D without an applied field: the vertically aligned nematic (VAN) state, the hybrid aligned nematic (HAN) state and a third, high-tilt state, which we call the THAN state, with an interior and a surface defect. We recover the order reconstruction (OR) phenomenon around the defects in the HAN and THAN states and the 3D THAN and HAN solutions exhibit stable biaxial cylinders connecting defects on opposite faces of the ZBD device. We demonstrate a two-way temperature-driven switching between high-tilt and low-tilt states through controlled heating and cooling procedures in two dimensions (2D), with no applied fields. © CopyrightEPLA, 2014.

  7. Electrical bistabilities and memory mechanisms of nonvolatile organic bistable devices based on exfoliated muscovite-type mica nanoparticle/poly(methylmethacrylate) nanocomposites

    Science.gov (United States)

    Lim, Won Gyu; Lee, Dea Uk; Na, Han Gil; Kim, Hyoun Woo; Kim, Tae Whan

    2018-02-01

    Organic bistable devices (OBDs) with exfoliated mica nanoparticles (NPs) embedded into an insulating poly(methylmethacrylate) (PMMA) layer were fabricated by using a spin-coating method. Current-voltage (I-V) curves for the Al/PMMA/exfoliated mica NP/PMMA/indium-tin-oxide/glass devices at 300 K showed a clockwise current hysteresis behavior due to the existence of the exfoliated muscovite-type mica NPs, which is an essential feature for bistable devices. Write-read-erase-read data showed that the OBDs had rewritable nonvolatile memories and an endurance number of ON/OFF switching for the OBDs of 102 cycles. An ON/OFF ratio of 1 × 103 was maintained for retention times larger than 1 × 104 s. The memory mechanisms of the fabricated OBDs were described by using the trapping and the tunneling processes within a PMMA active layer containing exfoliated muscovite-type mica NPs on the basis of the energy band diagram and the I-V curves.

  8. Fast switching of bistable magnetic nanowires through collective spin reversal

    Science.gov (United States)

    Vindigni, Alessandro; Rettori, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante; Sessoli, Roberta; Novak, Miguel A.

    2005-08-01

    The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.

  9. Coupled Reversible and Irreversible Bistable Switches Underlying TGFβ-induced Epithelial to Mesenchymal Transition

    Science.gov (United States)

    Tian, Xiao-Jun; Zhang, Hang; Xing, Jianhua

    2013-01-01

    Epithelial to mesenchymal transition (EMT) plays an important role in embryonic development, tissue regeneration, and cancer metastasis. Whereas several feedback loops have been shown to regulate EMT, it remains elusive how they coordinately modulate EMT response to TGF-β treatment. We construct a mathematical model for the core regulatory network controlling TGF-β-induced EMT. Through deterministic analyses and stochastic simulations, we show that EMT is a sequential two-step program in which an epithelial cell first is converted to partial EMT then to the mesenchymal state, depending on the strength and duration of TGF-β stimulation. Mechanistically the system is governed by coupled reversible and irreversible bistable switches. The SNAIL1/miR-34 double-negative feedback loop is responsible for the reversible switch and regulates the initiation of EMT, whereas the ZEB/miR-200 feedback loop is accountable for the irreversible switch and controls the establishment of the mesenchymal state. Furthermore, an autocrine TGF-β/miR-200 feedback loop makes the second switch irreversible, modulating the maintenance of EMT. Such coupled bistable switches are robust to parameter variation and molecular noise. We provide a mechanistic explanation on multiple experimental observations. The model makes several explicit predictions on hysteretic dynamic behaviors, system response to pulsed stimulation, and various perturbations, which can be straightforwardly tested. PMID:23972859

  10. Influence of ZnO nanostructures in liquid crystal interfaces for bistable switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Kaushik, E-mail: kaushikpal@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Zhan, Bihong, E-mail: bihong_zhan@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Madhu Mohan, M.L.N. [Liquid Crystal Research Laboratory (LCRL), Bannari Amman Institute of Technology, Sathyamangalam 638 401 (India); Schirhagl, Romana [University Medical Center Groningen, Department of BioMedical Engineering, Ant. Deusinglaan 1, 9713 AV Groningen (Netherlands); Wang, Guoping, E-mail: guopingwang@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China)

    2015-12-01

    constructed and compared. The switching times, the contrast ratio and spontaneous polarization of the nanostructures–HBLC composite film were carried out by systematic investigation. The sample preparation parameters, such as the curing time and curing intensity were optimized. The critical applied voltage to achieve the switching bi-stability of our device is only 4.5 V, which is approximately twice its threshold voltage for Freedericksz transition. This performance puts the hybrid structure at the top level in the state of the art in application oriented research in optics of liquid crystalline composite materials.

  11. A novel optic bistable device with very low threshold intensity using photorefractive films

    Science.gov (United States)

    Wang, Sean X.; Sun, Yuankun; Trivedi, Sudhir B.; Li, Guifang

    1994-08-01

    Brimrose Corporation of America reports the successful completion of the SBIR Phase I research in low-threshold intensity optical bistable devices using photorefractive nonlinearity. A thin photorefractive film optical bistable device was proposed in the Phase I proposal. The feasibility of this device was theoretically investigated. The theoretical feasibility study formulates the materials requirements in such a kind of configuration for Phase II research. In addition, we have proposed and investigated another configuration of optical bistable devices that do not require advanced photorefractive materials, namely, the self-pumped phase conjugator. We have successfully demonstrated a low-threshold optical bistable operation in a KNSBN:CU crystal. To the best of our knowledge, the threshold of 650 mW/sq. cm is the lowest of its kind to be achieved so far.

  12. Confinement and diffusion modulate bistability and stochastic switching in a reaction network with positive feedback

    International Nuclear Information System (INIS)

    Mlynarczyk, Paul J.; Pullen, Robert H.; Abel, Steven M.

    2016-01-01

    Positive feedback is a common feature in signal transduction networks and can lead to phenomena such as bistability and signal propagation by domain growth. Physical features of the cellular environment, such as spatial confinement and the mobility of proteins, play important but inadequately understood roles in shaping the behavior of signaling networks. Here, we use stochastic, spatially resolved kinetic Monte Carlo simulations to explore a positive feedback network as a function of system size, system shape, and mobility of molecules. We show that these physical properties can markedly alter characteristics of bistability and stochastic switching when compared with well-mixed simulations. Notably, systems of equal volume but different shapes can exhibit qualitatively different behaviors under otherwise identical conditions. We show that stochastic switching to a state maintained by positive feedback occurs by cluster formation and growth. Additionally, the frequency at which switching occurs depends nontrivially on the diffusion coefficient, which can promote or suppress switching relative to the well-mixed limit. Taken together, the results provide a framework for understanding how confinement and protein mobility influence emergent features of the positive feedback network by modulating molecular concentrations, diffusion-influenced rate parameters, and spatiotemporal correlations between molecules

  13. The limiting dynamics of a bistable molecular switch with and without noise.

    Science.gov (United States)

    Mackey, Michael C; Tyran-Kamińska, Marta

    2016-08-01

    We consider the dynamics of a population of organisms containing two mutually inhibitory gene regulatory networks, that can result in a bistable switch-like behaviour. We completely characterize their local and global dynamics in the absence of any noise, and then go on to consider the effects of either noise coming from bursting (transcription or translation), or Gaussian noise in molecular degradation rates when there is a dominant slow variable in the system. We show analytically how the steady state distribution in the population can range from a single unimodal distribution through a bimodal distribution and give the explicit analytic form for the invariant stationary density which is globally asymptotically stable. Rather remarkably, the behaviour of the stationary density with respect to the parameters characterizing the molecular behaviour of the bistable switch is qualitatively identical in the presence of noise coming from bursting as well as in the presence of Gaussian noise in the degradation rate. This implies that one cannot distinguish between either the dominant source or nature of noise based on the stationary molecular distribution in a population of cells. We finally show that the switch model with bursting but two dominant slow genes has an asymptotically stable stationary density.

  14. Bistable direction switching in an off-axis pumped continuous wave ruby laser

    Science.gov (United States)

    Afzal, R. Sohrab; Lawandy, N. M.

    1988-01-01

    A report is presented of the observation of hysteretic bistable direction switching in a single-mode CW ruby laser system. This effect is only observed when the pump beam which is focused into the ruby rod is misaligned with respect to the rod end faces. At low pump powers, the ruby lases in a mode nearly collinear with the pump axis. At a higher pump power the ruby switches to a mode that is collinear with the rod end faces and preserves the original polarization. The effect is large enough to switch the beam by an angle equal to twice the diffraction angle. The observations show that under steady-state pumping, a CW ruby laser can exhibit bistable operation in its output direction and power. A calculation using the heat equation with two concentric cylinders with one as a heat source (pump laser) and the outer wall of the other held at 77 K, gives an increase in core temperature of about 0.01 K. Therefore, the increase in temperature is not large enough to change the index of refraction to account for such large macroscopic effects.

  15. Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices

    Science.gov (United States)

    Hoang, Thu Trang; Ngo, Quang Minh; Vu, Dinh Lam; Le, Khai Q.; Nguyen, Truong Khang; Nguyen, Hieu P. T.

    2018-01-01

    Shrinking the linewidth of resonances induced by multiple coupled resonators is comprehensively analyzed using the coupled-mode theory (CMT) in time. Two types of coupled resonators under investigation are coupled resonator optical waveguides (CROWs) and side-coupled resonators with waveguide (SCREW). We examine the main parameters influencing on the spectral response such as the number of resonators (n) and the phase shift (φ) between two adjacent resonators. For the CROWs geometry consisting of n coupled resonators, we observe the quality (Q) factor of the right- and left-most resonant lineshapes increases n times larger than that of a single resonator. For the SCREW geometry, relying on the phase shift, sharp, and asymmetric resonant lineshape of the high Q factor a narrow linewidth of the spectral response could be achieved. We employ the finite-difference time-domain (FDTD) method to design and simulate two proposed resonators for practical applications. The proposed coupled resonators in silicon-on-insulator (SOI) slotted two-dimensional (2-D) photonic crystals (PhCs) filled and covered with a low refractive index organic material. Slotted PhC waveguides and cavities are designed to enhance the electromagnetic intensity and to confine the light into small cross-sectional area with low refractive index so that efficient optical devices could be achieved. A good agreement between the theoretical CMT analysis and the FDTD simulation is shown as an evidence for our accurate investigation. All-optical switches based on the CROWs in the SOI slotted 2-D PhC waveguide that are filled and covered by a nonlinear organic cladding to overcome the limitations of its well-known intrinsic properties are also presented. From the calculations, we introduce a dependency of the normalized linewidth of the right-most resonance and its switching power of the all-optical switches on number of resonator, n. This result might provide a guideline for all-optical signal processing on

  16. Numerical analysis of intrinsic bistability and chromatic switching in Tm3+ single-doped systems under photon avalanche pumping scheme

    International Nuclear Information System (INIS)

    Li Li; Zhang Xinlu; Chen Lixue

    2008-01-01

    In this paper, we predict and numerically demonstrate the intrinsic intensity bistability, spectra bistability and chromatic switching of visible-infrared emission in Tm 3+ single-doped systems that are pumped by the photon avalanche scheme at 648 nm. Based on the coupled rate equation theory, the evolutions of the populations at various Tm 3+ energy levels, emission spectra and fluorescence intensity versus pump excitation are numerically investigated in detail. The results show that intrinsic optical bistability (IOB) associated with emission spectra and luminescence intensity takes place in the vicinity of the avalanche threshold (∼10 kW cm -2 ). When the pump excitation rises above the switching threshold (∼17.5 kW cm -2 ), the chromatic switching between the infrared (1716 nm) and the visible blue (452/469 nm) spectra can be performed. Moreover, the influences of system parameters on IOB and the origin of chromatic switching are discussed. These unique characteristics of Tm 3+ -doped systems would lead to the new possibility of the development of pump-controlled all-solid-state luminescence switches and optical bistability switches.

  17. A bistable switch and anatomical site control Vibrio cholerae virulence gene expression in the intestine.

    Directory of Open Access Journals (Sweden)

    Alex T Nielsen

    2010-09-01

    Full Text Available A fundamental, but unanswered question in host-pathogen interactions is the timing, localization and population distribution of virulence gene expression during infection. Here, microarray and in situ single cell expression methods were used to study Vibrio cholerae growth and virulence gene expression during infection of the rabbit ligated ileal loop model of cholera. Genes encoding the toxin-coregulated pilus (TCP and cholera toxin (CT were powerfully expressed early in the infectious process in bacteria adjacent to epithelial surfaces. Increased growth was found to co-localize with virulence gene expression. Significant heterogeneity in the expression of tcpA, the repeating subunit of TCP, was observed late in the infectious process. The expression of tcpA, studied in single cells in a homogeneous medium, demonstrated unimodal induction of tcpA after addition of bicarbonate, a chemical inducer of virulence gene expression. Striking bifurcation of the population occurred during entry into stationary phase: one subpopulation continued to express tcpA, whereas the expression declined in the other subpopulation. ctxA, encoding the A subunit of CT, and toxT, encoding the proximal master regulator of virulence gene expression also exhibited the bifurcation phenotype. The bifurcation phenotype was found to be reversible, epigenetic and to persist after removal of bicarbonate, features consistent with bistable switches. The bistable switch requires the positive-feedback circuit controlling ToxT expression and formation of the CRP-cAMP complex during entry into stationary phase. Key features of this bistable switch also were demonstrated in vivo, where striking heterogeneity in tcpA expression was observed in luminal fluid in later stages of the infection. When this fluid was diluted into artificial seawater, bacterial aggregates continued to express tcpA for prolonged periods of time. The bistable control of virulence gene expression points to a

  18. Bridging time scales in cellular decision making with a stochastic bistable switch

    Directory of Open Access Journals (Sweden)

    Waldherr Steffen

    2010-08-01

    Full Text Available Abstract Background Cellular transformations which involve a significant phenotypical change of the cell's state use bistable biochemical switches as underlying decision systems. Some of these transformations act over a very long time scale on the cell population level, up to the entire lifespan of the organism. Results In this work, we aim at linking cellular decisions taking place on a time scale of years to decades with the biochemical dynamics in signal transduction and gene regulation, occuring on a time scale of minutes to hours. We show that a stochastic bistable switch forms a viable biochemical mechanism to implement decision processes on long time scales. As a case study, the mechanism is applied to model the initiation of follicle growth in mammalian ovaries, where the physiological time scale of follicle pool depletion is on the order of the organism's lifespan. We construct a simple mathematical model for this process based on experimental evidence for the involved genetic mechanisms. Conclusions Despite the underlying stochasticity, the proposed mechanism turns out to yield reliable behavior in large populations of cells subject to the considered decision process. Our model explains how the physiological time constant may emerge from the intrinsic stochasticity of the underlying gene regulatory network. Apart from ovarian follicles, the proposed mechanism may also be of relevance for other physiological systems where cells take binary decisions over a long time scale.

  19. Coupling between feedback loops in autoregulatory networks affects bistability range, open-loop gain and switching times

    International Nuclear Information System (INIS)

    Tiwari, Abhinav; Igoshin, Oleg A

    2012-01-01

    Biochemical regulatory networks governing diverse cellular processes such as stress-response, differentiation and cell cycle often contain coupled feedback loops. We aim at understanding how features of feedback architecture, such as the number of loops, the sign of the loops and the type of their coupling, affect network dynamical performance. Specifically, we investigate how bistability range, maximum open-loop gain and switching times of a network with transcriptional positive feedback are affected by additive or multiplicative coupling with another positive- or negative-feedback loop. We show that a network's bistability range is positively correlated with its maximum open-loop gain and that both quantities depend on the sign of the feedback loops and the type of feedback coupling. Moreover, we find that the addition of positive feedback could decrease the bistability range if we control the basal level in the signal-response curves of the two systems. Furthermore, the addition of negative feedback has the capacity to increase the bistability range if its dissociation constant is much lower than that of the positive feedback. We also find that the addition of a positive feedback to a bistable network increases the robustness of its bistability range, whereas the addition of a negative feedback decreases it. Finally, we show that the switching time for a transition from a high to a low steady state increases with the effective fold change in gene regulation. In summary, we show that the effect of coupled feedback loops on the bistability range and switching times depends on the underlying mechanistic details. (paper)

  20. Bistable out-of-plane stress-mismatched thermally actuated bilayer devices with large deflection

    International Nuclear Information System (INIS)

    Goessling, B A; Lucas, T M; Moiseeva, E V; Aebersold, J W; Harnett, C K

    2011-01-01

    In this paper, we explore microfabricated bistable actuators released as thin films from a silicon wafer. The actuators are based on a serpentine design where two cantilevers are coupled at the tips by a thin-film bar. These devices are parameterized by two lengths: cantilever length and the length of the coupling bar. These two dimensions are systematically varied to study the effect of design parameters on bistability. The three-dimensional devices have extremely large deflection (hundreds of microns rather than tens of microns for most planar microactuators of similar size) and are thermally actuated out of the plane of the wafer by applying a bias across either the left or right side of the serpentine. The bistability of these devices is evaluated using electron and optical microscopy. Potential applications include non-volatile mechanical memory, optical shutters, and reconfigurable antenna elements

  1. Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

    Science.gov (United States)

    Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

    2015-07-08

    We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

  2. Beam-splitter switches based on zenithal bistable liquid-crystal gratings.

    Science.gov (United States)

    Zografopoulos, Dimitrios C; Beccherelli, Romeo; Kriezis, Emmanouil E

    2014-10-01

    The tunable optical diffractive properties of zenithal bistable nematic liquid-crystal gratings are theoretically investigated. The liquid-crystal orientation is rigorously solved via a tensorial formulation of the Landau-de Gennes theory and the optical transmission properties of the gratings are investigated via full-wave finite-element frequency-domain simulations. It is demonstrated that by proper design the two stable states of the grating can provide nondiffracting and diffracting operation, the latter with equal power splitting among different diffraction orders. An electro-optic switching mechanism, based on dual-frequency nematic materials, and its temporal dynamics are further discussed. Such gratings provide a solution towards tunable beam-steering and beam-splitting components with extremely low power consumption.

  3. How to turn a genetic circuit into a synthetic tunable oscillator, or a bistable switch.

    Directory of Open Access Journals (Sweden)

    Lucia Marucci

    2009-12-01

    Full Text Available Systems and Synthetic Biology use computational models of biological pathways in order to study in silico the behaviour of biological pathways. Mathematical models allow to verify biological hypotheses and to predict new possible dynamical behaviours. Here we use the tools of non-linear analysis to understand how to change the dynamics of the genes composing a novel synthetic network recently constructed in the yeast Saccharomyces cerevisiae for In-vivo Reverse-engineering and Modelling Assessment (IRMA. Guided by previous theoretical results that make the dynamics of a biological network depend on its topological properties, through the use of simulation and continuation techniques, we found that the network can be easily turned into a robust and tunable synthetic oscillator or a bistable switch. Our results provide guidelines to properly re-engineering in vivo the network in order to tune its dynamics.

  4. Flexible Bistable Smectic-A Liquid Crystal Device Using Photolithography and Photoinduced Phase Separation

    Directory of Open Access Journals (Sweden)

    Yang Lu

    2012-01-01

    Full Text Available A flexible bistable smectic-A liquid crystal (SmA LC device using pixel-isolated mode was demonstrated, in which SmA LC molecules were isolated in pixels by vertical polymer wall and horizontal polymer layer. The above microstructure was achieved by using ultraviolet (UV photolithography and photoinduced phase separation. The polymer wall was fabricated by photolithography, and then the SmA LC was encapsulated in pixels between polymer wall through UV-induced phase separation, in which the polymer wall acts as supporting structure from mechanical pressure and maintains the cell gap from bending, and the polymer layer acts as adhesive for tight attachment of two substrates. The results demonstrated that all the intrinsic bistable properties of the SmA LC are preserved, and good electrooptical characteristics such as high contrast ratio and excellent stability of the bistable states were characterized. This kind of SmA bistable flexible display has high potential to be used as electronic paper, smart switchable reflective windows, and so forth.

  5. Cell cycle commitment in budding yeast emerges from the cooperation of multiple bistable switches

    Science.gov (United States)

    Zhang, Tongli; Schmierer, Bernhard; Novák, Béla

    2011-01-01

    The start-transition (START) in the G1 phase marks the point in the cell cycle at which a yeast cell initiates a new round of cell division. Once made, this decision is irreversible and the cell is committed to progressing through the entire cell cycle, irrespective of arrest signals such as pheromone. How commitment emerges from the underlying molecular interaction network is poorly understood. Here, we perform a dynamical systems analysis of an established cell cycle model, which has never been analysed from a commitment perspective. We show that the irreversibility of the START transition and subsequent commitment can be consistently explained in terms of the interplay of multiple bistable molecular switches. By applying an existing mathematical model to a novel problem and by expanding the model in a self-consistent manner, we achieve several goals: we bring together a large number of experimental findings into a coherent theoretical framework; we increase the scope and the applicability of the original model; we give a systems level explanation of how the START transition and the cell cycle commitment arise from the dynamical features of the underlying molecular interaction network; and we make clear, experimentally testable predictions. PMID:22645649

  6. Bistable optical response of a nanoparticle heterodimer : Mechanism, phase diagram, and switching time

    NARCIS (Netherlands)

    Nugroho, Bintoro; Iskandar, Alexander; Malyshev, V.A.; Knoester, Jasper

    2013-01-01

    We conduct a theoretical study of the bistable optical response of a nanoparticle heterodimer comprised of a closely spaced semiconductor quantum dot and a metal nanoparticle. The bistable nature of the response results from the interplay between the quantum dot's optical nonlinearity and its

  7. MATHEMATICAL MODEL OF A QUICK-DRIVING ACTUATOR OF AN AUTOMATIC SWITCH WITH AN INSTANT-DYNAMIC AND BISTABLE MECHANISM

    Directory of Open Access Journals (Sweden)

    E. I. BAIDA

    2018-05-01

    Full Text Available Purpose. Development of a mathematical model of an induction-dynamic drive of a switch with two coils, working with a bistable mechanism, which ensures the fixation of the instant-dynamic mechanism (IDM in trajectory extreme positions of the contact system. Methodology. The solution of the problems posed in the work was carried out using methods for calculating the electromagnetic field, finite elements, theoretical mechanics, and solving differential equations. Findings. The mathematical model of quick-driving actuator as part of instant dynamic and bistable mechanism was developed. It was based on electrical circuit’s electromagnetic equations and kinematic movements of the switching mechanism. Advantage of the given model is possibility of a breaker drive dynamic analysis basing on data of a contact pressure, pretravel and snatch gap. Initial data of the model formulation were outer circuit inductance, resistance of coils, which calculated on conductor cross-section and coils configuration. Initial conditions corresponded by Dirichlet conditions. Mathematical model equations system was calculated in cylindrical coordinate system. Problem was solved with the help ComsolMultiphysics system. Motion of the IDM movement part was modeled by deformation of a computational grid. Spring force and stress in a bistable mechanism construction were determined by initial data of a contact pressure, pretravel and snatch gap. Graphs by calculation data are shown, which allow to analyze of springing elements chose and make necessary adjustments on design stage and debugging construction. Operation parameters of mechanism work on IDM switch on and switch off stages were calculated. Value of movement, motion speed of armature breaker, currents of accelerating and retarding coils, summed electromagnetic and opposite force were figured. Originality. The mathematical model of quick-driving actuator as part of instant-dynamic and bistable mechanism was developed

  8. Controllable optical bistability and multistability in asymmetric double quantum wells via spontaneously generated coherence

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuan; Deng, Li [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Chen, Aixi, E-mail: aixichen@ecjtu.jx.cn [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Institute for Quantum Computing, University of Waterloo, Ontario N2L 3G1 (Canada)

    2015-02-15

    We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device.

  9. Controllable optical bistability and multistability in asymmetric double quantum wells via spontaneously generated coherence

    International Nuclear Information System (INIS)

    Chen, Yuan; Deng, Li; Chen, Aixi

    2015-01-01

    We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device

  10. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser

    2012-11-21

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Optical bistability of optical fiber ring doped by Erbium and quantum dots

    International Nuclear Information System (INIS)

    Safari, S.; Tofighi, S.; Bahrampour, A.; Sajad, B.; Shahshahani, F.

    2012-01-01

    In this paper, theoretical analysis of the steady state behavior of the optical bistability in an optical fiber ring doped by Erbium and quantum dots is presented. The up and down switching power is calculated and the dependence of the switching power on different fiber ring parameters is investigated. The switching power for this type of optical bistability device is obtained much lower than the fiber ring which its half length is doped by Erbium ion.

  12. Second-order differential-delay equation to describe a hybrid bistable device

    Science.gov (United States)

    Vallee, R.; Dubois, P.; Cote, M.; Delisle, C.

    1987-08-01

    The problem of a dynamical system with delayed feedback, a hybrid bistable device, characterized by n response times and described by an nth-order differential-delay equation (DDE) is discussed. Starting from a linear-stability analysis of the DDE, the effects of the second-order differential terms on the position of the first bifurcation and on the frequency of the resulting self-oscillation are shown. The effects of the third-order differential terms on the first bifurcation are also considered. Experimental results are shown to support the linear analysis.

  13. Studies of switching structures in ferroelectric liquid crystal devices

    International Nuclear Information System (INIS)

    Pabla, D.S.

    1998-01-01

    The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

  14. Studies of switching structures in ferroelectric liquid crystal devices

    Energy Technology Data Exchange (ETDEWEB)

    Pabla, D.S

    1998-07-01

    The fast, bistable electro-optic response of ferroelectric liquid crystal (FLC) devices has made them prime candidates for use in display applications. However, before these applications can become widely commercially viable a number of key issues relating to the switching within these devices need to be addressed. One of these is related to the fact that while there has been much work done on modelling the switching process in FLC devices, with some moderate success, in the main these models have not accurately accounted for the physical processes taking place. In order to rectify this situation we present a simple, multi-variable approach which includes important physical phenomenon such as stressed states, partial and domain switching. Through using this model we learn more about the dynamic molecular profiles which may exist in devices, and use this as a springboard to undertake a comprehensive theoretical and experimental study of the molecular profiles of chevron structures under different types of addressing pulses and voltages. This entails modelling the dynamic profiles using a simple non flow reorientation theory and comparing these simulations directly with experimental data obtained through the use of two different optical characterisation techniques. Our findings show quite conclusively that for monopolar addressing within low and high voltage regimes and for low voltage bipolar pulses during the early stages of switching, the dynamic reorientation near the surfaces and central regions of the device lags the reorientation within the bulk. The reverse however being true for the high voltage bipolar addressing case. These results for chevron structures differ from previous theoretical predictions made by others using equations derived from the flow coupled chiral smectic C continuum theory. These flow coupled simulations however, refer to reorientation in bookshelf structures rather than the chevron type structures thought to exist in FLC devices. As

  15. Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

    DEFF Research Database (Denmark)

    Stasch, R.; Hey, R.; Asche, M.

    1996-01-01

    Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n–-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime...

  16. Large aperture optical switching devices

    International Nuclear Information System (INIS)

    Goldhar, J.; Henesian, M.A.

    1983-01-01

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

  17. Convergent Transcription in the Butyrolactone Regulon in Streptomyces coelicolor Confers a Bistable Genetic Switch for Antibiotic Biosynthesis

    Science.gov (United States)

    Chatterjee, Anushree; Drews, Laurie; Mehra, Sarika; Takano, Eriko; Kaznessis, Yiannis N.; Hu, Wei-Shou

    2011-01-01

    cis-encoded antisense RNAs (cis asRNA) have been reported to participate in gene expression regulation in both eukaryotic and prokaryotic organisms. Its presence in Streptomyces coelicolor has also been reported recently; however, its role has yet to be fully investigated. Using mathematical modeling we explore the role of cis asRNA produced as a result of convergent transcription in scbA-scbR genetic switch. scbA and scbR gene pair, encoding repressor–amplifier proteins respectively, mediates the synthesis of a signaling molecule, the γ-butyrolactone SCB1 and controls the onset of antibiotic production. Our model considers that transcriptional interference caused by convergent transcription of two opposing RNA polymerases results in fatal collision and transcriptional termination, which suppresses transcription efficiency. Additionally, convergent transcription causes sense and antisense interactions between complementary sequences from opposing strands, rendering the full length transcript inaccessible for translation. We evaluated the role of transcriptional interference and the antisense effect conferred by convergent transcription on the behavior of scbA-scbR system. Stability analysis showed that while transcriptional interference affects the system, it is asRNA that confers scbA-scbR system the characteristics of a bistable switch in response to the signaling molecule SCB1. With its critical role of regulating the onset of antibiotic synthesis the bistable behavior offers this two gene system the needed robustness to be a genetic switch. The convergent two gene system with potential of transcriptional interference is a frequent feature in various genomes. The possibility of asRNA regulation in other such gene-pairs is yet to be examined. PMID:21765930

  18. Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

    Science.gov (United States)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2018-02-01

    We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

  19. All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

    2012-01-01

    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

  20. Photonic Switching Devices Using Light Bullets

    Science.gov (United States)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  1. Stability, bistability and instability of amorphous ZrO2 resistive memory devices

    International Nuclear Information System (INIS)

    Parreira, P; Paterson, G W; McVitie, S; MacLaren, D A

    2016-01-01

    Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO 2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface. (paper)

  2. Bistability in a Metabolic Network Underpins the De Novo Evolution of Colony Switching in Pseudomonas fluorescens

    DEFF Research Database (Denmark)

    Gallie, Jenna; Libby, Eric; Bertels, Frederic

    2015-01-01

    Phenotype switching is commonly observed in nature. This prevalence has allowed the elucidation of a number of underlying molecular mechanisms. However, little is known about how phenotypic switches arise and function in their early evolutionary stages. The first opportunity to provide empirical ...

  3. Jump and pull-in dynamics of an electrically actuated bistable MEMS device

    KAUST Repository

    Ruzziconi, Laura

    2014-09-01

    This study analyzes a theoretical bistable MEMS device, which exhibits a considerable versatility of behavior. After exploring the coexistence of attractors, we focus on each rest position, and investigate the final outcome, when the electrodynamic voltage is suddenly applied. Our aim is to describe the parameter range where each attractor may practically be observed under realistic conditions, when an electric load is suddenly applied. Since disturbances are inevitably encountered in experiments and practice, a dynamical integrity analysis is performed in order to take them into account. We build the integrity charts, which examine the practical vulnerability of each attractor. A small integrity enhances the sensitivity of the system to disturbances, leading in practice either to jump or to dynamic pull-in. Accordingly, the parameter range where the device, subjected to a suddenly applied load, can operate in safe conditions with a certain attractor is smaller, and sometimes considerably smaller, than in the theoretical predictions. While we refer to a particular case-study, the approach is very general.

  4. Reversibly Bistable Flexible Electronics

    KAUST Repository

    Alfaraj, Nasir

    2015-05-01

    Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

  5. Multichannel all–optical switch based on a thin slab of resonant two–level emitters

    Directory of Open Access Journals (Sweden)

    Malikov Ramil

    2017-01-01

    Full Text Available We discuss the possibility of using a thin layer of inhomogeneously broadened resonant emitters as a multichannel all–optical switch. Switching time from the lower stable branch of the system's bistable characteristics to the upper one and vice versa, which determines the speed of operation of a bistable device, is studied.

  6. Theoretical Insights into the Biophysics of Protein Bi-stability and Evolutionary Switches.

    Directory of Open Access Journals (Sweden)

    Tobias Sikosek

    2016-06-01

    Full Text Available Deciphering the effects of nonsynonymous mutations on protein structure is central to many areas of biomedical research and is of fundamental importance to the study of molecular evolution. Much of the investigation of protein evolution has focused on mutations that leave a protein's folded structure essentially unchanged. However, to evolve novel folds of proteins, mutations that lead to large conformational modifications have to be involved. Unraveling the basic biophysics of such mutations is a challenge to theory, especially when only one or two amino acid substitutions cause a large-scale conformational switch. Among the few such mutational switches identified experimentally, the one between the GA all-α and GB α+β folds is extensively characterized; but all-atom simulations using fully transferrable potentials have not been able to account for this striking switching behavior. Here we introduce an explicit-chain model that combines structure-based native biases for multiple alternative structures with a general physical atomic force field, and apply this construct to twelve mutants spanning the sequence variation between GA and GB. In agreement with experiment, we observe conformational switching from GA to GB upon a single L45Y substitution in the GA98 mutant. In line with the latent evolutionary potential concept, our model shows a gradual sequence-dependent change in fold preference in the mutants before this switch. Our analysis also indicates that a sharp GA/GB switch may arise from the orientation dependence of aromatic π-interactions. These findings provide physical insights toward rationalizing, predicting and designing evolutionary conformational switches.

  7. Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

    Science.gov (United States)

    Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

    2018-05-01

    Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

  8. Intrinsic Noise Profoundly Alters the Dynamics and Steady State of Morphogen-Controlled Bistable Genetic Switches.

    Directory of Open Access Journals (Sweden)

    Ruben Perez-Carrasco

    2016-10-01

    Full Text Available During tissue development, patterns of gene expression determine the spatial arrangement of cell types. In many cases, gradients of secreted signalling molecules-morphogens-guide this process by controlling downstream transcriptional networks. A mechanism commonly used in these networks to convert the continuous information provided by the gradient into discrete transitions between adjacent cell types is the genetic toggle switch, composed of cross-repressing transcriptional determinants. Previous analyses have emphasised the steady state output of these mechanisms. Here, we explore the dynamics of the toggle switch and use exact numerical simulations of the kinetic reactions, the corresponding Chemical Langevin Equation, and Minimum Action Path theory to establish a framework for studying the effect of gene expression noise on patterning time and boundary position. This provides insight into the time scale, gene expression trajectories and directionality of stochastic switching events between cell states. Taking gene expression noise into account predicts that the final boundary position of a morphogen-induced toggle switch, although robust to changes in the details of the noise, is distinct from that of the deterministic system. Moreover, the dramatic increase in patterning time close to the boundary predicted from the deterministic case is substantially reduced. The resulting stochastic switching introduces differences in patterning time along the morphogen gradient that result in a patterning wave propagating away from the morphogen source with a velocity determined by the intrinsic noise. The wave sharpens and slows as it advances and may never reach steady state in a biologically relevant time. This could explain experimentally observed dynamics of pattern formation. Together the analysis reveals the importance of dynamical transients for understanding morphogen-driven transcriptional networks and indicates that gene expression noise can

  9. Intrinsic Noise Profoundly Alters the Dynamics and Steady State of Morphogen-Controlled Bistable Genetic Switches

    Science.gov (United States)

    Page, Karen M.

    2016-01-01

    During tissue development, patterns of gene expression determine the spatial arrangement of cell types. In many cases, gradients of secreted signalling molecules—morphogens—guide this process by controlling downstream transcriptional networks. A mechanism commonly used in these networks to convert the continuous information provided by the gradient into discrete transitions between adjacent cell types is the genetic toggle switch, composed of cross-repressing transcriptional determinants. Previous analyses have emphasised the steady state output of these mechanisms. Here, we explore the dynamics of the toggle switch and use exact numerical simulations of the kinetic reactions, the corresponding Chemical Langevin Equation, and Minimum Action Path theory to establish a framework for studying the effect of gene expression noise on patterning time and boundary position. This provides insight into the time scale, gene expression trajectories and directionality of stochastic switching events between cell states. Taking gene expression noise into account predicts that the final boundary position of a morphogen-induced toggle switch, although robust to changes in the details of the noise, is distinct from that of the deterministic system. Moreover, the dramatic increase in patterning time close to the boundary predicted from the deterministic case is substantially reduced. The resulting stochastic switching introduces differences in patterning time along the morphogen gradient that result in a patterning wave propagating away from the morphogen source with a velocity determined by the intrinsic noise. The wave sharpens and slows as it advances and may never reach steady state in a biologically relevant time. This could explain experimentally observed dynamics of pattern formation. Together the analysis reveals the importance of dynamical transients for understanding morphogen-driven transcriptional networks and indicates that gene expression noise can qualitatively

  10. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  11. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

    2009-01-01

    The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

  12. Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

    Science.gov (United States)

    Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

    2012-09-01

    Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

  13. Bistable cholesteric liquid crystal light shutter with multielectrode driving.

    Science.gov (United States)

    Li, Cheng-Chang; Tseng, Heng-Yi; Pai, Tsung-Wei; Wu, Yu-Ching; Hsu, Wen-Hao; Jau, Hung-Chang; Chen, Chun-Wei; Lin, Tsung-Hsien

    2014-08-01

    An electrically activated bistable light shutter that exploits polymer-stabilized cholesteric liquid crystal film was developed. Under double-sided three-terminal electrode driving, the device can be bistable and switched between focal conic and homeotropic textures with a uniform in-plane and vertical electrical field. The transparent state with a transmittance of 80% and the opaque/scattering state with a transmittance of 13% can be realized without any optical compensation film, and each can be simply switched to the other by applying a pulse voltage. Also, gray-scale selection can be performed by varying the applied voltage. The designed energy-saving bistable light shutter can be utilized to preserve privacy and control illumination and the flow of energy.

  14. Bistable Mechanisms for Space Applications.

    Science.gov (United States)

    Zirbel, Shannon A; Tolman, Kyler A; Trease, Brian P; Howell, Larry L

    2016-01-01

    Compliant bistable mechanisms are monolithic devices with two stable equilibrium positions separated by an unstable equilibrium position. They show promise in space applications as nonexplosive release mechanisms in deployment systems, thereby eliminating friction and improving the reliability and precision of those mechanical devices. This paper presents both analytical and numerical models that are used to predict bistable behavior and can be used to create bistable mechanisms in materials not previously feasible for compliant mechanisms. Materials compatible with space applications are evaluated for use as bistable mechanisms and prototypes are fabricated in three different materials. Pin-puller and cutter release mechanisms are proposed as potential space applications.

  15. MicroRNA-Mediated Positive Feedback Loop and Optimized Bistable Switch in a Cancer Network Involving miR-17-92

    Science.gov (United States)

    Li, Yichen; Li, Yumin; Zhang, Hui; Chen, Yong

    2011-01-01

    MicroRNAs (miRNAs) are small, noncoding RNAs that play an important role in many key biological processes, including development, cell differentiation, the cell cycle and apoptosis, as central post-transcriptional regulators of gene expression. Recent studies have shown that miRNAs can act as oncogenes and tumor suppressors depending on the context. The present work focuses on the physiological significance of miRNAs and their role in regulating the switching behavior. We illustrate an abstract model of the Myc/E2F/miR-17-92 network presented by Aguda et al. (2008), which is composed of coupling between the E2F/Myc positive feedback loops and the E2F/Myc/miR-17-92 negative feedback loop. By systematically analyzing the network in close association with plausible experimental parameters, we show that, in the presence of miRNAs, the system bistability emerges from the system, with a bistable switch and a one-way switch presented by Aguda et al. instead of a single one-way switch. Moreover, the miRNAs can optimize the switching process. The model produces a diverse array of response-signal behaviors in response to various potential regulating scenarios. The model predicts that this transition exists, one from cell death or the cancerous phenotype directly to cell quiescence, due to the existence of miRNAs. It was also found that the network involving miR-17-92 exhibits high noise sensitivity due to a positive feedback loop and also maintains resistance to noise from a negative feedback loop. PMID:22022595

  16. Contact materials for nanowire devices and nanoelectromechanical switches

    KAUST Repository

    Hussain, Muhammad Mustafa

    2011-02-01

    The impact of contact materials on the performance of nanostructured devices is expected to be signifi cant. This is especially true since size scaling can increase the contact resistance and induce many unseen phenomenon and reactions that greatly impact device performance. Nanowire and nanoelectromechanical switches are two emerging nanoelectronic devices. Nanowires provide a unique opportunity to control the property of a material at an ultra-scaled dimension, whereas a nanoelectromechanical switch presents zero power consumption in its off state, as it is physically detached from the sensor anode. In this article, we specifi cally discuss contact material issues related to nanowire devices and nanoelectromechanical switches.

  17. Towards an optimal model for a bistable nematic liquid crystal display device

    KAUST Repository

    Cummings, L. J.; Cai, C.; Kondic, L.

    2013-01-01

    and Richardson (Euro J Appl Math 17:435-463 2006), and explore means by which it may be optimized, in terms of optical contrast, manufacturing considerations, switching field strength, and switching times. The compromises inherent in these conflicting design

  18. Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

    Science.gov (United States)

    Maeda, Y

    1994-06-20

    An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

  19. All-optical devices for ultrafast packet switching

    DEFF Research Database (Denmark)

    Dorren, H.J.S.; HerreraDorren, J.; Raz, O.

    2007-01-01

    We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

  20. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

    2008-01-01

    The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

  1. IGBT Dynamic Loss Reduction through Device Level Soft Switching

    Directory of Open Access Journals (Sweden)

    Lan Ma

    2018-05-01

    Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

  2. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  3. Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

    DEFF Research Database (Denmark)

    An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

    2014-01-01

    We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

  4. Compact integrated optical devices for optical sensor and switching applications

    NARCIS (Netherlands)

    Kauppinen, L.J.

    2010-01-01

    This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

  5. Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Lee, Dea Uk; Kim, Hyoun Woo; Kim, Tae Whan

    2018-01-01

    Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300 K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 × 104, which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 × 102 cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The ;erase; voltages were distributed between 2.3 and 3 V, and the ;write; voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 × 104 s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams.

  6. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  7. Bistable near field and bistable transmittance in 2D composite slab consisting of nonlocal core-Kerr shell inclusions.

    Science.gov (United States)

    Huang, Yang; Wu, Ya Min; Gao, Lei

    2017-01-23

    We carry out a theoretical study on optical bistability of near field intensity and transmittance in two-dimensional nonlinear composite slab. This kind of 2D composite is composed of nonlocal metal/Kerr-type dielectric core-shell inclusions randomly embedded in the host medium, and we derivate the nonlinear relation between the field intensity in the shell of inclusions and the incident field intensity with self-consistent mean field approximation. Numerical demonstration has been performed to show the viable parameter space for the bistable near field. We show that nonlocality can provide broader region in geometric parameter space for bistable near field as well as bistable transmittance of the nonlocal composite slab compared to local case. Furthermore, we investigate the bistable transmittance in wavelength spectrum, and find that besides the input intensity, the wavelength operation could as well make the transmittance jump from a high value to a low one. This kind of self-tunable nano-composite slab might have potential application in optical switching devices.

  8. Fast Switching ITO Free Electrochromic Devices

    DEFF Research Database (Denmark)

    Jensen, Jacob; Hösel, Markus; Kim, Inyoung

    2014-01-01

    devices with a response time of 2 s for an optical contrast of 27%. The other design utilizes an embedded silver grid electrode whereupon response times of 0.5 s for a 30% optical contrast are realized when oxidizing the device. A commercially available conductive poly(3,4-ethylenedioxythiophene):poly(4...

  9. Bistable microelectromechanical actuator

    Science.gov (United States)

    Fleming, James G.

    1999-01-01

    A bistable microelectromechanical (MEM) actuator is formed on a substrate and includes a stressed membrane of generally rectangular shape that upon release assumes a curvilinear cross-sectional shape due to attachment at a midpoint to a resilient member and at opposing edges to a pair of elongate supports. The stressed membrane can be electrostatically switched between a pair of mechanical states having mirror-image symmetry, with the MEM actuator remaining in a quiescent state after a programming voltage is removed. The bistable MEM actuator according to various embodiments of the present invention can be used to form a nonvolatile memory element, an optical modulator (with a pair of mirrors supported above the membrane and moving in synchronism as the membrane is switched), a switchable mirror (with a single mirror supported above the membrane at the midpoint thereof) and a latching relay (with a pair of contacts that open and close as the membrane is switched). Arrays of bistable MEM actuators can be formed for applications including nonvolatile memories, optical displays and optical computing.

  10. Bistable minimum energy structures (BiMES) for binary robotics

    International Nuclear Information System (INIS)

    Follador, M; Conn, A T; Rossiter, J

    2015-01-01

    Bistable minimum energy structures (BiMES) are devices derived from the union of the concepts of dielectric elastomer minimum energy structures and bistable systems. This article presents this novel approach to active, elastic and bistable structures. BiMES are based on dielectric elastomer actuators (DEAs), which act as antagonists and provide the actuation for switching between the two equilibrium positions. A central elastic beam is the backbone of the structure and is buckled into the minimum energy configurations by the action of the two DEAs. The theory and the model of the device are presented, and also its fabrication process. BiMES are considered as fundamental units for more complex structures, which are presented and fabricated as proof of concept. Two different ways of combining the multiple units are proposed: a parallel configuration, to make a simple gripper, and a serial configuration, to generate a binary device. The possibility of using the bistable system as a continuous bender actuator, by modulating the actuation voltage of the two DEAs, was also investigated. (paper)

  11. Bistability of Cavity Magnon Polaritons

    Science.gov (United States)

    Wang, Yi-Pu; Zhang, Guo-Qiang; Zhang, Dengke; Li, Tie-Fu; Hu, C.-M.; You, J. Q.

    2018-01-01

    We report the first observation of the magnon-polariton bistability in a cavity magnonics system consisting of cavity photons strongly interacting with the magnons in a small yttrium iron garnet (YIG) sphere. The bistable behaviors emerged as sharp frequency switchings of the cavity magnon polaritons (CMPs) and related to the transition between states with large and small numbers of polaritons. In our experiment, we align, respectively, the [100] and [110] crystallographic axes of the YIG sphere parallel to the static magnetic field and find very different bistable behaviors (e.g., clockwise and counter-clockwise hysteresis loops) in these two cases. The experimental results are well fitted and explained as being due to the Kerr nonlinearity with either a positive or negative coefficient. Moreover, when the magnetic field is tuned away from the anticrossing point of CMPs, we observe simultaneous bistability of both magnons and cavity photons by applying a drive field on the lower branch.

  12. Method of bistable optical information storage using antiferroelectric phase PLZT ceramics

    Science.gov (United States)

    Land, Cecil E.

    1990-01-01

    A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field.

  13. A bistable mechanism for directional sensing

    International Nuclear Information System (INIS)

    Beta, C; Amselem, G; Bodenschatz, E

    2008-01-01

    We present a generic mechanism for directional sensing in eukaryotic cells that is based on bistable dynamics. As the key feature of this modeling approach, the velocity of trigger waves in the bistable sensing system changes its sign across cells that are exposed to an external chemoattractant gradient. This is achieved by combining a two-component activator/inhibitor system with a bistable switch that induces an identical symmetry breaking for arbitrary gradient input signals. A simple kinetic example is designed to illustrate the dynamics of a bistable directional sensing mechanism in numerical simulations

  14. Automatic Time Regulator for Switching on an Aeration Device for ...

    African Journals Online (AJOL)

    The need to aerate the pond at odd hours due to diurnal limit, save cost and human labor, necessitated the design of an automatic time regulator circuit, which controls the switching on and o of an aeration device at a pre determined and selected time interval (5mins., 10mins., 20mins., 30mins., and 40mins.) This design ...

  15. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  16. Inhibitors Alter the Stochasticity of Regulatory Proteins to Force Cells to Switch to the Other State in the Bistable System.

    Science.gov (United States)

    Jhang, Wun-Sin; Lo, Shih-Chiang; Yeh, Chen-Chao; Shu, Che-Chi

    2017-06-30

    The cellular behaviors under the control of genetic circuits are subject to stochastic fluctuations, or noise. The stochasticity in gene regulation, far from a nuisance, has been gradually appreciated for its unusual function in cellular activities. In this work, with Chemical Master Equation (CME), we discovered that the addition of inhibitors altered the stochasticity of regulatory proteins. For a bistable system of a mutually inhibitory network, such a change of noise led to the migration of cells in the bimodal distribution. We proposed that the consumption of regulatory protein caused by the addition of inhibitor is not the only reason for pushing cells to the specific state; the change of the intracellular stochasticity is also the main cause for the redistribution. For the level of the inhibitor capable of driving 99% of cells, if there is no consumption of regulatory protein, 88% of cells were guided to the specific state. It implied that cells were pushed, by the inhibitor, to the specific state due to the change of stochasticity.

  17. Bi-stable optical actuator

    Science.gov (United States)

    Holdener, Fred R.; Boyd, Robert D.

    2000-01-01

    The present invention is a bi-stable optical actuator device that is depowered in both stable positions. A bearing is used to transfer motion and smoothly transition from one state to another. The optical actuator device may be maintained in a stable position either by gravity or a restraining device.

  18. Design of a Clap Activated Switch

    Directory of Open Access Journals (Sweden)

    Seyi Stephen OLOKEDE

    2008-12-01

    Full Text Available This paper presents the design of a clap activated switch device that will serve well in different phono-controlled applications, providing inexpensive key and at the same time flee from false triggering.This involves the design of various sages consisting of the pickup transducer, low frequency, audio low power and low noise amplifier, timer, bistable and switches. It also consists of special network components to prevent false triggering and ensure desired performance objectives. A decade counter IC serves the bistable function instead of flip-flop, special transistor and edge triggering network for low audio frequency.

  19. Bistability in a laser with injected signal

    International Nuclear Information System (INIS)

    Dorobantu, I.A.; Vlad, V.I.; Ursu, I.

    1987-04-01

    A unified description of bistability is given in free running lasers, optical bistable devices, ring lasers and lasers with an injected signal (LIS). A general review of laser instabilities is also presented in the frame of the theory of elementary catastrophes, emphasizing the apparence of higher order catastrophes in the case of a LIS suggesting thus a possibility to devise from first principles the whole hierarchy of laser instabilities. Experimental results on the bistability in the polarisation of LIS are also discussed. (authors)

  20. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    Science.gov (United States)

    Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

    2013-08-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

  1. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    International Nuclear Information System (INIS)

    Gogurla, Narendar; Mondal, Suvra P; Sinha, Arun K; Katiyar, Ajit K; Banerjee, Writam; Ray, Samit K; Kundu, Subhas C

    2013-01-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems. (paper)

  2. Bianthrone in a Single-Molecule Junction: Conductance Switching with a Bistable Molecule Facilitated by Image Charge Effects

    DEFF Research Database (Denmark)

    Bjørnholm, Thomas

    2010-01-01

    Bianthrone is a sterically hindered compound that exists in the form of two nonplanar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated with molecular isomerizat...

  3. Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot

    Czech Academy of Sciences Publication Activity Database

    Yamazaki, S.; Maeda, K.; Sugimoto, Y.; Abe, M.; Zobač, Vladimír; Pou, P.; Rodrigo, L.; Mutombo, Pingo; Perez, R.; Jelínek, Pavel; Morita, S.

    2015-01-01

    Roč. 15, č. 7 (2015), 4356-4363 ISSN 1530-6984 R&D Projects: GA ČR(CZ) GA14-02079S Institutional support: RVO:68378271 Keywords : atomic manipulation * atomic switch * Si quantum dot * scanning tunneling microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.779, year: 2015

  4. Interrupter and hybrid-switch testing for fusion devices

    International Nuclear Information System (INIS)

    Parsons, W.M.; Warren, R.W.; Honig, E.M.; Lindsay, J.D.G.; Bellamo, P.; Cassel, R.L.

    1979-01-01

    This paper discusses recent and ongoing switch testing for fusion devices. The first part describes testing for the TFTR ohmic-heating circuit. In this set of tests, which simulated the stresses produced during a plasma initiation pulse, circuit breakers were required to interrupt a current of 24 kA with an associated recovery voltage of 25 kV. Two interrupter systems were tested for over 1000 operations each, and both appear to satisfy TFTR requirements. The second part discusses hybrid-switch development for superconducting coil protection. These switching systems must be capable of carrying large currents on a continuous basis as well as performing interruption duties. The third part presents preliminary results on an early-counterpulse technique applied to vacuum interrupters. Implementation of this technique has resulted in large increases in interruptible current as well as a marked reduction in contact erosion

  5. Optically controlled multiple switching operations of DNA biopolymer devices

    International Nuclear Information System (INIS)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-01-01

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices

  6. Optically controlled multiple switching operations of DNA biopolymer devices

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Fruk, Ljiljana [Department of Chemical Engineering and Biotechnology, University of Cambridge, Pembroke Street, Cambridge CB2 3RA (United Kingdom); Hung, Yu-Chueh, E-mail: ychung@ee.nthu.edu.tw [Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2015-12-21

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  7. Electrochemical structure-switching sensing using nanoplasmonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Patskovsky, Sergiy; Dallaire, Anne-Marie; Blanchard-Dionne, Andre-Pierre; Meunier, Michel [Department of Engineering Physics, Laser Processing and Plasmonics Laboratory, Polytechnique, Montreal, Station Centre-ville, QC (Canada); Vallee-Belisle, Alexis [Laboratory of Biosensors and Nanomachines, Departement de Chimie, Universite de Montreal, QC (Canada)

    2015-12-15

    In this article, the implementation of electrochemical plasmonic nanostructures functionalized with DNA-based structure-switching sensors is presented. eNanoSPR devices with open and microfluidic measurement cells are developed on the base of nanohole arrays in 100 nm gold film and applied for combined microscopic and electrochemical surface plasmon (eSPR) visualization. eSPR voltammograms and spectroscopy are performed using planar three electrode schematic with plasmonic nanostructure operated as working electrode. Limit of detection of eNanoSPR devices for oligonucleotide hybridization is estimated in the low nanomolar and applications for structure-switching electro-plasmonic sensing in complex liquids are discussed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Bistable scattering in graphene-coated dielectric nanowires.

    Science.gov (United States)

    Li, Rujiang; Wang, Huaping; Zheng, Bin; Dehdashti, Shahram; Li, Erping; Chen, Hongsheng

    2017-06-22

    In nonlinear plasmonics, the switching threshold of optical bistability is limited by the weak nonlinear responses from the conventional Kerr dielectric media. Considering the giant nonlinear susceptibility of graphene, here we develop a nonlinear scattering model under the mean field approximation and study the bistable scattering in graphene-coated dielectric nanowires based on the semi-analytical solutions. We find that the switching intensities of bistable scattering can be smaller than 1 MW cm -2 at the working frequency. To further decrease the switching intensities, we show that the most important factor that restricts the bistable scattering is the relaxation time of graphene. Our work not only reveals some general characteristics of graphene-based bistable scattering, but also provides a guidance to further applications of optical bistability in the high speed all-optical signal processing.

  9. Materials growth and characterization of thermoelectric and resistive switching devices

    Science.gov (United States)

    Norris, Kate J.

    In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

  10. Take it of leave it : Mechanisms underlying bacterial bistable regulatory networks

    NARCIS (Netherlands)

    Siebring, Jeroen; Sorg, Robin; Herber, Martijn; Kuipers, Oscar; Filloux, Alain A.M.

    2012-01-01

    Bistable switches occur in regulatory networks that can exist in two distinct stable states. Such networks allow distinct switching of individual cells. In bacteria these switches coexist with regulatory networks that respond gradually to environmental input. Bistable switches play key roles in high

  11. Low-threshold optical bistability with multilayer graphene-covering Otto configuration

    International Nuclear Information System (INIS)

    Wang, Hengliang; Wu, Jipeng; Xiang, Yuanjiang; Wen, Shuangchun; Guo, Jun; Jiang, Leyong

    2016-01-01

    In this paper, we propose a modified Otto configuration to realize tunable and low-threshold optical bistability at terahertz frequencies by attaching multilayer graphene sheets to a nonlinear substrate interface. Our work demonstrates that the threshold of optical bistability can be markedly reduced (three orders of magnitude) by covering the nonlinear substrate with multilayer graphene sheets, due to strong local field enhancement with the excitation of surface plasmons. We present the influences of the Fermi energy of graphene, the incident angle, the thickness of air gap and the relaxation time of graphene on the hysteresis phenomenon and give a way to optimize the surface plasmon resonance, which will enable us to further lower the minimal power requirements for realizing optical bistability due to the strong interaction of light with graphene sheets. These results are promising for realization of terahertz optical switches, optical modulators and logical devices. (paper)

  12. Bifurcation properties of nematic liquid crystals exposed to an electric field: Switchability, bistability, and multistability

    KAUST Repository

    Cummings, L. J.

    2013-07-01

    Bistable liquid crystal displays (LCDs) offer the potential for considerable power savings compared with conventional (monostable) LCDs. The existence of two (or more) stable field-free states that are optically distinct means that contrast can be maintained in a display without an externally applied electric field. An applied field is required only to switch the device from one state to the other, as needed. In this paper we examine the basic physical principles involved in generating multiple stable states and the switching between these states. We consider a two-dimensional geometry in which variable surface anchoring conditions are used to control the steady-state solutions and explore how different anchoring conditions can influence the number and type of solutions and whether or not switching is possible between the states. We find a wide range of possible behaviors, including bistability, tristability, and tetrastability, and investigate how the solution landscape changes as the boundary conditions are tuned. © 2013 American Physical Society.

  13. Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

    International Nuclear Information System (INIS)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Kim, Sowon; Choi, Kyung Hyun

    2017-01-01

    Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al 2 O 3 ) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications. (paper)

  14. A novel bistable energy harvesting concept

    International Nuclear Information System (INIS)

    Scarselli, G; Nicassio, F; Pinto, F; Ciampa, F; Iervolino, O; Meo, M

    2016-01-01

    Bistable energy harvesting has become a major field of research due to some unique features for converting mechanical energy into electrical power. When properly loaded, bistable structures snap-through from one stable configuration to another, causing large strains and consequently power generation. Moreover, bistable structures can harvest energy across a broad-frequency bandwidth due to their nonlinear characteristics. Despite the fact that snap-through may be triggered regardless of the form or frequency of exciting vibration, the external force must reach a specific snap-through activation threshold value to trigger the transition from one stable state to another. This aspect is a limiting factor for realistic vibration energy harvesting application with bistable devices. This paper presents a novel power harvesting concept for bistable composites based on a ‘lever effect’ aimed at minimising the activation force to cause the snap through by choosing properly the bistable structures’ constraints. The concept was demonstrated with the help of numerical simulation and experimental testing. The results showed that the actuation force is one order of magnitude smaller (3%–6%) than the activation force of conventionally constrained bistable devices. In addition, it was shown that the output voltage was higher than the conventional configuration, leading to a significant increase in power generation. This novel concept could lead to a new generation of more efficient bistable energy harvesters for realistic vibration environments. (paper)

  15. Optical bistability and multistability driven by external magnetic field in a dielectric slab doped with nanodiamond nitrogen vacancy centres

    Science.gov (United States)

    Nasehi, R.; Norouzi, F.

    2016-08-01

    The theoretical investigation of controlling the optical bistability (OB) and optical multistability (OM) in a dielectric medium doped with nanodiamond nitrogen vacancy centres under optical excitation are reported. The shape of the OB curve from dielectric slab can be tuned by changing the external magnetic field and polarization of the control beam. The effect of the intensity of the control laser field and the frequency detuning of probe laser field on the OB and OM behaviour are also discussed in this paper. The results obtained can be used for realizing an all-optical bistable switching or development of nanoelectronic devices.

  16. Multi-Valued Spin Switch in a Semiconductor Microcavity

    Science.gov (United States)

    Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

    2011-12-01

    In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

  17. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong; Du, Yuanmin; Li, Yingtao; Zhu, Bowen; Leow, Wan Ru; Li, Yuangang; Pan, Jisheng; Wu, Tao; Chen, Xiaodong

    2015-01-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable

  18. Steady state statistical correlations predict bistability in reaction motifs.

    Science.gov (United States)

    Chakravarty, Suchana; Barik, Debashis

    2017-03-28

    Various cellular decision making processes are regulated by bistable switches that take graded input signals and convert them to binary all-or-none responses. Traditionally, a bistable switch generated by a positive feedback loop is characterized either by a hysteretic signal response curve with two distinct signaling thresholds or by characterizing the bimodality of the response distribution in the bistable region. To identify the intrinsic bistability of a feedback regulated network, here we propose that bistability can be determined by correlating higher order moments and cumulants (≥2) of the joint steady state distributions of two components connected in a positive feedback loop. We performed stochastic simulations of four feedback regulated models with intrinsic bistability and we show that for a bistable switch with variation of the signal dose, the steady state variance vs. covariance adopts a signatory cusp-shaped curve. Further, we find that the (n + 1)th order cross-cumulant vs. nth order cross-cumulant adopts a closed loop structure for at least n = 3. We also propose that our method is capable of identifying systems without intrinsic bistability even though the system may show bimodality in the marginal response distribution. The proposed method can be used to analyze single cell protein data measured at steady state from experiments such as flow cytometry.

  19. Manually operatable on-chip bistable pneumatic microstructures for microfluidic manipulations.

    Science.gov (United States)

    Chen, Arnold; Pan, Tingrui

    2014-09-07

    Bistable microvalves are of particular interest because of their distinct nature of requiring energy consumption only during the transition between the open and closed states. This characteristic can be highly advantageous in reducing the number of external inputs and the complexity of control circuitries since microfluidic devices as contemporary lab-on-a-chip platforms are transferring from research settings to low-resource environments with high integrability and a small form factor. In this paper, we first present manually operatable, on-chip bistable pneumatic microstructures (BPMs) for microfluidic manipulation. The structural design and operation of the BPM devices can be readily integrated into any pneumatically powered microfluidic network consisting of pneumatic and fluidic channels. It is mainly composed of a vacuum activation chamber (VAC) and a pressure release chamber (PRC), of which users have direct control through finger pressing to switch either to the bistable vacuum state (VS) or the atmospheric state (AS). We have integrated multiple BPM devices into a 4-to-1 microfluidic multiplexor to demonstrate on-chip digital flow switching from different sources. Furthermore, we have shown its clinical relevance in a point-of-care diagnostic chip that processes blood samples to identify the distinct blood types (A/B/O) on-chip.

  20. GABA shapes the dynamics of bistable perception.

    Science.gov (United States)

    van Loon, Anouk M; Knapen, Tomas; Scholte, H Steven; St John-Saaltink, Elexa; Donner, Tobias H; Lamme, Victor A F

    2013-05-06

    Sometimes, perception fluctuates spontaneously between two distinct interpretations of a constant sensory input. These bistable perceptual phenomena provide a unique window into the neural mechanisms that create the contents of conscious perception. Models of bistable perception posit that mutual inhibition between stimulus-selective neural populations in visual cortex plays a key role in these spontaneous perceptual fluctuations. However, a direct link between neural inhibition and bistable perception has not yet been established experimentally. Here, we link perceptual dynamics in three distinct bistable visual illusions (binocular rivalry, motion-induced blindness, and structure from motion) to measurements of gamma-aminobutyric acid (GABA) concentrations in human visual cortex (as measured with magnetic resonance spectroscopy) and to pharmacological stimulation of the GABAA receptor by means of lorazepam. As predicted by a model of neural interactions underlying bistability, both higher GABA concentrations in visual cortex and lorazepam administration induced slower perceptual dynamics, as reflected in a reduced number of perceptual switches and a lengthening of percept durations. Thus, we show that GABA, the main inhibitory neurotransmitter, shapes the dynamics of bistable perception. These results pave the way for future studies into the competitive neural interactions across the visual cortical hierarchy that elicit conscious perception. Copyright © 2013 Elsevier Ltd. All rights reserved.

  1. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  2. Plasmon-modulated bistable four-wave mixing signals from a metal nanoparticle-monolayer MoS2 nanoresonator hybrid system

    Science.gov (United States)

    Li, Jian-Bo; Tan, Xiao-Long; Ma, Jin-Hong; Xu, Si-Qin; Kuang, Zhi-Wei; Liang, Shan; Xiao, Si; He, Meng-Dong; Kim, Nam-Chol; Luo, Jian-Hua; Chen, Li-Qun

    2018-06-01

    We present a study for the impact of exciton-phonon and exciton-plasmon interactions on bistable four-wave mixing (FWM) signals in a metal nanoparticle (MNP)-monolayer MoS2 nanoresonator hybrid system. Via tracing the FWM response we predict that, depending on the excitation conditions and the system parameters, such a system exhibits ‘U-shaped’ bistable FWM signals. We also map out bistability phase diagrams within the system’s parameter space. Especially, we show that compared with the exciton-phonon interaction, a strong exciton-plasmon interaction plays a dominant role in the generation of optical bistability, and the bistable region will be greatly broadened by shortening the distance between the MNP and the monolayer MoS2 nanoresonator. In the weak exciton-plasmon coupling regime, the impact of exciton-phonon interaction on optical bistability will become obvious. The scheme proposed may be used for building optical switches and logic-gate devices for optical computing and quantum information processing.

  3. Plasmon-modulated bistable four-wave mixing signals from a metal nanoparticle-monolayer MoS2 nanoresonator hybrid system.

    Science.gov (United States)

    Li, Jian-Bo; Tan, Xiao-Long; Ma, Jin-Hong; Xu, Si-Qin; Kuang, Zhi-Wei; Liang, Shan; Xiao, Si; He, Meng-Dong; Kim, Nam-Chol; Luo, Jian-Hua; Chen, Li-Qun

    2018-06-22

    We present a study for the impact of exciton-phonon and exciton-plasmon interactions on bistable four-wave mixing (FWM) signals in a metal nanoparticle (MNP)-monolayer MoS 2 nanoresonator hybrid system. Via tracing the FWM response we predict that, depending on the excitation conditions and the system parameters, such a system exhibits 'U-shaped' bistable FWM signals. We also map out bistability phase diagrams within the system's parameter space. Especially, we show that compared with the exciton-phonon interaction, a strong exciton-plasmon interaction plays a dominant role in the generation of optical bistability, and the bistable region will be greatly broadened by shortening the distance between the MNP and the monolayer MoS 2 nanoresonator. In the weak exciton-plasmon coupling regime, the impact of exciton-phonon interaction on optical bistability will become obvious. The scheme proposed may be used for building optical switches and logic-gate devices for optical computing and quantum information processing.

  4. Controllable optical bistability in a three-mode optomechanical system with atom-cavity-mirror couplings

    Science.gov (United States)

    Chen, Bin; Wang, Xiao-Fang; Yan, Jia-Kai; Zhu, Xiao-Fei; Jiang, Cheng

    2018-01-01

    We theoretically investigate the optical bistable behavior in a three-mode optomechanical system with atom-cavity-mirror couplings. The effects of the cavity-pump detuning and the pump power on the bistable behavior are discussed detailedly, the impacts of the atom-pump detuning and the atom-cavity coupling strength on the bistability of the system are also explored, and the influences of the cavity-resonator coupling strength and the cavity decay rate are also taken into consideration. The numerical results demonstrate that by tuning these parameters the bistable behavior of the system can be freely switched on or off, and the threshold of the pump power for the bistability as well as the bistable region width can also be effectively controlled. These results can find potential applications in optical bistable switch in the quantum information processing.

  5. Optical bistability in Er-Yb codoped phosphate glass microspheres at room temperature

    NARCIS (Netherlands)

    Warda, Jonathan M.; O'Shea, Danny G.; Shortt, Brian J.; Chormaic, Sile Nic

    2007-01-01

    We experimentally demonstrate optical bistability in Er(3+)-Yb(3+) phosphate glass microspheres at 295 K. Bistability is associated with both Er(3+) fluorescence and lasing behavior, and chromatic switching. The chromatic switching results from an intrinsic mechanism exploiting the thermal coupling

  6. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Interlinked bistable mechanisms generate robust mitotic transitions.

    Science.gov (United States)

    Hutter, Lukas H; Rata, Scott; Hochegger, Helfrid; Novák, Béla

    2017-10-18

    The transitions between phases of the cell cycle have evolved to be robust and switch-like, which ensures temporal separation of DNA replication, sister chromatid separation, and cell division. Mathematical models describing the biochemical interaction networks of cell cycle regulators attribute these properties to underlying bistable switches, which inherently generate robust, switch-like, and irreversible transitions between states. We have recently presented new mathematical models for two control systems that regulate crucial transitions in the cell cycle: mitotic entry and exit, 1 and the mitotic checkpoint. 2 Each of the two control systems is characterized by two interlinked bistable switches. In the case of mitotic checkpoint control, these switches are mutually activating, whereas in the case of the mitotic entry/exit network, the switches are mutually inhibiting. In this Perspective we describe the qualitative features of these regulatory motifs and show that having two interlinked bistable mechanisms further enhances robustness and irreversibility. We speculate that these network motifs also underlie other cell cycle transitions and cellular transitions between distinct biochemical states.

  8. Optically coupled cavities for wavelength switching

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.ar, E-mail: granieri@rose-hulman.edu, E-mail: siahmako@rose-hulman.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    An optical bistable device which presents hysteresis behavior is proposed and experimentally demonstrated. The system finds applications in wavelength switching, pulse reshaping and optical bistability. It is based on two optically coupled cavities named master and slave. Each cavity includes a semiconductor optical amplifier (SOA), acting as the gain medium of the laser, and two pair of fiber Bragg gratings (FBG) which define the lasing wavelength (being different in each cavity). Finally, a variable optical coupler (VOC) is employed to couple both cavities. Experimental characterization of the system performance is made analyzing the effects of the coupling coefficient between the two cavities and the driving current in each SOA. The properties of the hysteretic bistable curve and switching can be controlled by adjusting these parameters and the loss in the cavities. By selecting the output wavelength ({lambda}{sub 1} or {lambda}{sub 2}) with an external filter it is possible to choose either the invert or non-invert switched signal. Experiments were developed employing both optical discrete components and a photonic integrated circuit. They show that for 8 m-long cavities the maximum switching frequency is about 500 KHz, and for 4 m-long cavities a minimum rise-time about 21 ns was measured. The switching time can be reduced by shortening the cavity lengths and using photonic integrated circuits.

  9. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  10. Bistable Reflective Etalon (BRET)

    National Research Council Canada - National Science Library

    Shellenbarger, Zane

    2003-01-01

    This project designed, fabricated, and characterized normal-incidence etalon structures at 1550 nm wavelength operation for application, as bistable elements, to photonic analog-to-digital conversion...

  11. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.; Pu, L.; Wu, J.C.; Cha, Dong Kyu; Hong, J.H.; Lin, W.N.; Li, Yangyang; Ding, Junfeng; David, A.; Li, K.; Wu, Tao

    2013-01-01

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3

  12. Reliability-cost models for the power switching devices of wind power converters

    DEFF Research Database (Denmark)

    Ma, Ke; Blaabjerg, Frede

    2012-01-01

    In order to satisfy the growing reliability requirements for the wind power converters with more cost-effective solution, the target of this paper is to establish a new reliability-cost model which can connect the relationship between reliability performances and corresponding semiconductor cost...... temperature mean value Tm and fluctuation amplitude ΔTj of power devices, are presented. With the proposed reliability-cost model, it is possible to enable future reliability-oriented design of the power switching devices for wind power converters, and also an evaluation benchmark for different wind power...... for power switching devices. First the conduction loss, switching loss as well as thermal impedance models of power switching devices (IGBT module) are related to the semiconductor chip number information respectively. Afterwards simplified analytical solutions, which can directly extract the junction...

  13. Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

    Science.gov (United States)

    Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

    2012-01-10

    An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  15. Device for dynamic switching of robot control points

    DEFF Research Database (Denmark)

    2015-01-01

    The invention comprises a system for switching between control points of a robotic system involving an industrial robot including a robot arm with a number of joints and provided with a tool interest point movable in a plurality of degrees of freedom.......The invention comprises a system for switching between control points of a robotic system involving an industrial robot including a robot arm with a number of joints and provided with a tool interest point movable in a plurality of degrees of freedom....

  16. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    Science.gov (United States)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  17. Ground-state kinetics of bistable redox-active donor-acceptor mechanically interlocked molecules.

    Science.gov (United States)

    Fahrenbach, Albert C; Bruns, Carson J; Li, Hao; Trabolsi, Ali; Coskun, Ali; Stoddart, J Fraser

    2014-02-18

    The ability to design and confer control over the kinetics of theprocesses involved in the mechanisms of artificial molecular machines is at the heart of the challenge to create ones that can carry out useful work on their environment, just as Nature is wont to do. As one of the more promising forerunners of prototypical artificial molecular machines, chemists have developed bistable redox-active donor-acceptor mechanically interlocked molecules (MIMs) over the past couple of decades. These bistable MIMs generally come in the form of [2]rotaxanes, molecular compounds that constitute a ring mechanically interlocked around a dumbbell-shaped component, or [2]catenanes, which are composed of two mechanically interlocked rings. As a result of their interlocked nature, bistable MIMs possess the inherent propensity to express controllable intramolecular, large-amplitude, and reversible motions in response to redox stimuli. In this Account, we rationalize the kinetic behavior in the ground state for a large assortment of these types of bistable MIMs, including both rotaxanes and catenanes. These structures have proven useful in a variety of applications ranging from drug delivery to molecular electronic devices. These bistable donor-acceptor MIMs can switch between two different isomeric states. The favored isomer, known as the ground-state co-conformation (GSCC) is in equilibrium with the less favored metastable state co-conformation (MSCC). The forward (kf) and backward (kb) rate constants associated with this ground-state equilibrium are intimately connected to each other through the ground-state distribution constant, KGS. Knowing the rate constants that govern the kinetics and bring about the equilibration between the MSCC and GSCC, allows researchers to understand the operation of these bistable MIMs in a device setting and apply them toward the construction of artificial molecular machines. The three biggest influences on the ground-state rate constants arise from

  18. The function of buffer layer in resistive switching device.

    Czech Academy of Sciences Publication Activity Database

    Zhang, B.; Prokop, V.; Střižík, L.; Zima, Vítězslav; Kutálek, P.; Vlček, Milan; Wágner, T.

    2017-01-01

    Roč. 14, č. 8 (2017), s. 291-295 ISSN 1584-8663 Institutional support: RVO:61389013 Keywords : resistive switching * chalcogenide glasses * buffer layer Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2016 http://www.chalcogen.ro/291_ZhangB.pdf

  19. Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2–ZnS core–shell quantum dots embedded in a poly(methylmethacrylate) layer

    International Nuclear Information System (INIS)

    Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

    2013-01-01

    The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS 2 (CIS) core or CIS–ZnS core–shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium–tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS–ZnS QDs. Current–voltage measurements on Al/CIS or CIS–ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS–ZnS QDs were approximately 1 × 10 3 and 1 × 10 5 , respectively. The retention number of ON and OFF states was measured by 1 × 10 5 . The memory mechanisms of the OBDs with CIS or CIS–ZnS QDs are described on the basis of the experimental results. - Highlights: • Organic bistable devices utilizing nanocomposites were fabricated. • Current–voltage results on organic bistable devices showed current bistabilities. • Maximum ON/OFF current ratio of the device with core–shell quantum dots was 1 × 10 5 . • Retention number of the device with core–shell quantum dots was 1 × 10 5

  20. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  1. Impacts of Co doping on ZnO transparent switching memory device characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Simanjuntak, Firman Mangasa; Wei, Kung-Hwa [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Prasad, Om Kumar [Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Panda, Debashis [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-05-02

    The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  2. Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes.

    Science.gov (United States)

    Li, Lei; Wen, Dianzhong

    2018-02-17

    The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs) in poly(methyl methacrylate) (PMMA) was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS) are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.

  3. Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Lei Li

    2018-02-01

    Full Text Available The incorporation of the one-dimensional carbon nanomaterial carbon nanotubes (CNTs in poly(methyl methacrylate (PMMA was found to successfully develop a resistive switching. It implements memristic characteristics which shift from bistable to tristable memory. The localized current pathways in the organic nanocomposite layers for each intermediate resistive state (IRS are attributed to the trapping mechanism consistent with the fluorescent measurements. Multi-bit organic memories have attracted considerable interest, which provide an effective way to increase the memory density per unit cell area. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.

  4. Laser activated superconducting switch

    International Nuclear Information System (INIS)

    Wolf, A.A.

    1976-01-01

    A superconducting switch or bistable device is described consisting of a superconductor in a cryogen maintaining a temperature just below the transition temperature, having a window of the proper optical frequency band for passing a laser beam which may impinge on the superconductor when desired. The frequency of the laser is equal to or greater than the optical absorption frequency of the superconducting material and is consistent with the ratio of the gap energy of the switch material to Planck's constant, to cause depairing of electrons, and thereby normalize the superconductor. Some embodiments comprise first and second superconducting metals. Other embodiments feature the two superconducting metals separated by a thin film insulator through which the superconducting electrons tunnel during superconductivity

  5. Potential negative consequences of non-consented switch of inhaled medications and devices in asthma patients.

    Science.gov (United States)

    Björnsdóttir, U S; Gizurarson, S; Sabale, U

    2013-09-01

    Asthma requires individually tailored and careful management to control and prevent symptoms and exacerbations. Selection of the most appropriate treatment is dependent on both the choice of drugs and inhaler device; however, financial pressures may result in patients being switched to alternative medications and devices in an attempt to reduce costs. This review aimed to examine the published literature in order to ascertain whether switching a patient's asthma medications or device negatively impacts clinical and economic outcomes. A literature search of MEDLINE (2001-13 September 2011) was conducted to identify English-language articles focused on the direct impact of switching medications and inhaler devices and switching from fixed-dose combination to monocomponent therapy via separate inhalers in patients with asthma; the indirect impacts of switching were also assessed. Evidence showed that non-consented switching of medications and inhalers in patients with asthma can be associated with a range of negative outcomes, at both individual and organisational levels. Factors that reduce adherence may lead to compromised symptom control resulting in increased healthcare resource utilisation and poorer patient quality of life. The consequences of a non-consented switch should be weighed carefully against arguments supporting an inhaler switch without the patient's consent for non-medical/budgetary reasons, such as potential reductions in initial acquisition costs, which may be associated with subsequent additional healthcare needs. Given the increasing pressure for reduced costs and efficient allocation of limited healthcare resources, an additional investment in ensuring high medication adherence may lead to greater savings due to a potentially decreased demand for healthcare services. In contrast, savings achieved in acquisition costs may result in a greater net loss due to increased healthcare consumption caused by decreased asthma control. © 2013 The Authors

  6. Electrical switching and memory phenomena observed in redox-gradient dendrimer sandwich devices

    OpenAIRE

    Li, JianChang; Blackstock, Silas C.; Szulczewski, Greg J.

    2005-01-01

    We report on the fabrication of dendrimer sandwich devices with electrical switching and memory properties. The storage media is consisted of a redox-gradient dendrimer layer sandwiched in organic barrier thin films. The dendrimer layer acts as potential well where redox-state changes and consequent electrical transitions of the embedded dendrimer molecules are expected to be effectively triggered and retained, respectively. Experimental results indicated that electrical switching could be re...

  7. Generalized nematohydrodynamic boundary conditions with application to bistable twisted nematic liquid-crystal displays

    KAUST Repository

    Fang, Angbo

    2008-12-08

    Parallel to the highly successful Ericksen-Leslie hydrodynamic theory for the bulk behavior of nematic liquid crystals (NLCs), we derive a set of coupled hydrodynamic boundary conditions to describe the NLC dynamics near NLC-solid interfaces. In our boundary conditions, translational flux (flow slippage) and rotational flux (surface director relaxation) are coupled according to the Onsager variational principle of least energy dissipation. The application of our boundary conditions to the truly bistable π -twist NLC cell reveals a complete picture of the dynamic switching processes. It is found that the thus far overlooked translation-rotation dissipative coupling at solid surfaces can accelerate surface director relaxation and enhance the flow rate. This can be utilized to improve the performance of electro-optical nematic devices by lowering the required switching voltages and reducing the switching times. © 2008 The American Physical Society.

  8. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  9. Bistable Topological Insulator with Exciton-Polaritons

    Science.gov (United States)

    Kartashov, Yaroslav V.; Skryabin, Dmitry V.

    2017-12-01

    The functionality of many nonlinear and quantum optical devices relies on the effect of optical bistability. Using microcavity exciton-polaritons in a honeycomb arrangement of microcavity pillars, we report the resonance response and bistability of topological edge states. A balance between the pump, loss, and nonlinearity ensures a broad range of dynamical stability and controls the distribution of power between counterpropagating states on the opposite edges of the honeycomb lattice stripe. Tuning energy and polarization of the pump photons, while keeping their momentum constant, we demonstrate control of the propagation direction of the dominant edge state. Our results facilitate the development of practical applications of topological photonics.

  10. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

  11. Light-activated resistance switching in SiOx RRAM devices

    Science.gov (United States)

    Mehonic, A.; Gerard, T.; Kenyon, A. J.

    2017-12-01

    We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

  12. Materials and devices for all-optical helicity-dependent switching

    Science.gov (United States)

    Salah El Hadri, Mohammed; Hehn, Michel; Malinowski, Grégory; Mangin, Stéphane

    2017-04-01

    Since the first observation of ultrafast demagnetization in Ni thin films by Beaurepaire et al 20 years ago, understanding the interaction between ultrashort laser pulses and magnetization has become a topic of huge interest. In 2007, an intriguing discovery related to ultrafast demagnetization was the observation of all-optical switching (AOS) of magnetization in ferrimagnetic GdFeCo alloy films using only femtosecond laser pulses. This review discusses the recent studies elucidating several key issues regarding the all-optical switching phenomenon. Although AOS had long been restricted to GdFeCo alloys, it turned out to be a more general phenomenon for a variety of ferrimagnetic as well as ferromagnetic materials. This discovery helped pave the way for the integration of all-optical writing in data storage industries. Nevertheless, theoretical models explaining the switching in GdFeCo alloy films do not appear to apply in the other materials, thus questioning the uniqueness of the microscopic origin of all-optical switching. By investigating the integration of all-optical switching in spintronic devices, two types of all-optical switching mechanism have been distinguished: a single-pulse heat-only switching in ferrimagnetic GdFeCo alloys, and a two regime helicity-dependent switching in both ferrimagnetic TbCo alloys and ferromagnetic Co/Pt multilayers. Another key issue discussed in this review is the necessary condition for the observation of all-optical switching. Many models have been proposed but are strongly challenged by the discovery of such switching in ferromagnets. A comprehensive investigation of the magnetic parameters governing all-optical switching demonstrate that its observation requires magnetic domains larger than the laser spot size during the cooling process; such a criterion is common for both ferri- and ferro-magnets. These investigations strongly improve our understanding and give intriguing insights into the rich physics of the ultrafast

  13. The derivation of a bistable criterion for double V-beam mechanisms

    International Nuclear Information System (INIS)

    Wu, Cho-Chun; Chen, Rongshun; Lin, Meng-Ju

    2013-01-01

    This study presents the theoretical derivation of the discriminant D as a structural and material criterion for determining whether bistability can occur in micromechanically bistable mechanisms. When D < 0, the mechanism displays bistable behavior if an appropriate force is applied to push the bistable mechanism, whereas when D > 0, bistable behavior cannot occur. The proposed V-beam bistable mechanism was successfully fabricated with various beam lengths and tilted angles. The experiments conducted in this study validated the theoretical study of bistability. A comparison of the theoretical solutions and experimental results shows good agreement. Results further show that to design a bistable V-beam mechanism, the tilted angle should be larger for the same beam length, whereas the beam length should be longer for the same tilted angle. The developed discriminant D can be used to predict if a bistable mechanism can achieve bistable behavior based on structural sizes and material properties. Consequently, researchers can reduce trial-and-error experiments when designing a bistable mechanism. A V-beam with a larger tilted angle of up to 5° was successfully fabricated to act as a bistable mechanism, compared to a 3.5° tilted angle in existing studies. Consequently, the proposed method has the advantages of shorter beam lengths and smaller device areas. (paper)

  14. The tunable bistable and multistable memory effect in polymer nanowires

    International Nuclear Information System (INIS)

    Rahman, Atikur; Sanyal, Milan K

    2008-01-01

    Tunable bistable and multistable resistance switching in conducting polymer nanowires has been reported. These wires show reproducible switching transition under several READ-WRITE-ERASE cycles. The switching is observed at low temperature and the ON/OFF resistance ratio for the voltage biased switching transition was found to be more than 10 3 . Current biased measurements show lower ON/OFF ratio and some of the nanowires exhibit a multistable switching transition in current biased measurements. The threshold voltage for switching and the ON/OFF resistance ratio can be tuned by changing doping concentration of the nanowires

  15. Innovative architecture of switching device for expanding the applications in fiber to the home (FTTH)

    Science.gov (United States)

    Mahmoud, Mohamed; Fayed, Heba A.; Aly, Moustafa H.; Aboul Seoud, A. K.

    2011-08-01

    A new device, optical cross add drop multiplexer (OXADM), is proposed and analyzed. It uses the combination concept of optical add drop multiplexer (OADM) and optical cross connect (OXC). It enables a wavelength switch while implementing add and drop functions simultaneously. So, it expands the applications in fiber to the home (FTTH) and optical core networks. A very high isolation crosstalk level (~ 60 dB) is achieved. Also, a bidirectional OXADM and N×N OXADM are proposed. Finally, a multistage OXADM is presented making some sort of wavelength buffering. To make these devices operate more efficient, tunable fiber Bragg gratings (TFBGs) switches are used to control the operation mechanism.

  16. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  17. Stabilization of metal-oxide bulk switching device with diffused Bi contacts

    International Nuclear Information System (INIS)

    Lalevic, B.; Shoga, M.; Gvishi, M.; Levy, S.; Army ERADCOM, Ft. Monmouth, NJ)

    1979-01-01

    Threshold switching from the high to low resistance state has been investigated in the polycrystalline and single crystal NbO/sub x/ (where x is approximately = 2) metal-oxide devices. Stable and reproducible switching performance is observed in a configuration Bi-NbO 2 -Bi where Bi electrodes were covered with Au films. Improvement in the device performance is attributed to the Bi diffusion into NbO/sub x/ which has been confirmed by the Auger electron spectroscopy. Typical off state resistance of these devices is approx.100 KΩ and threshold switching voltage in the range from 100 to 2500 V. The delay time tau/sub d/ is exponentially dependent on the applied voltage V/sub appl/ and at larger V/sub appl'/ the delay time is less than a nanosecond. Recovery time of a device is approx.0.5 μsec as determined by the method of decreasing time interval between two successive pulses. Holding voltage is approx.40 V. The pulsed switched devices can withstand pulse durations between 0.1 to 3 μsec, repetition rate of 100 C/s and current intensities of 10 to 15 A, or 25 A peak with the applied pulse duration of 20 μsec, single shot

  18. Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

    International Nuclear Information System (INIS)

    Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

    2016-01-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

  19. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  20. A bistable model of cell polarity.

    Directory of Open Access Journals (Sweden)

    Matteo Semplice

    Full Text Available Ultrasensitivity, as described by Goldbeter and Koshland, has been considered for a long time as a way to realize bistable switches in biological systems. It is not as well recognized that when ultrasensitivity and reinforcing feedback loops are present in a spatially distributed system such as the cell plasmamembrane, they may induce bistability and spatial separation of the system into distinct signaling phases. Here we suggest that bistability of ultrasensitive signaling pathways in a diffusive environment provides a basic mechanism to realize cell membrane polarity. Cell membrane polarization is a fundamental process implicated in several basic biological phenomena, such as differentiation, proliferation, migration and morphogenesis of unicellular and multicellular organisms. We describe a simple, solvable model of cell membrane polarization based on the coupling of membrane diffusion with bistable enzymatic dynamics. The model can reproduce a broad range of symmetry-breaking events, such as those observed in eukaryotic directional sensing, the apico-basal polarization of epithelium cells, the polarization of budding and mating yeast, and the formation of Ras nanoclusters in several cell types.

  1. Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

    Science.gov (United States)

    Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

    2013-07-01

    Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

  2. Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

    International Nuclear Information System (INIS)

    Surawanitkun, C.; Kaewrawang, A.; Siritaratiwat, A.; Kruesubthaworn, A.; Sivaratana, R.; Jutong, N.; Mewes, C.K.A.; Mewes, T.

    2015-01-01

    For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect

  3. Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

  4. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device.

    Science.gov (United States)

    Hameed, Waqas; Azmat, Syed Khurram; Ali, Moazzam; Hussain, Wajahat; Mustafa, Ghulam; Ishaque, Muhammad; Ali, Safdar; Ahmed, Aftab; Temmerman, Marleen

    2015-01-01

    Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD) to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9) randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0) the chances of method switching. Compared with women who received free IUCD service (via voucher scheme), the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction.

  5. Determinants of Method Switching among Social Franchise Clients Who Discontinued the Use of Intrauterine Contraceptive Device

    Directory of Open Access Journals (Sweden)

    Waqas Hameed

    2015-01-01

    Full Text Available Introduction. Women who do not switch to alternate methods after contraceptive discontinuation, for reasons other than the desire to get pregnant or not needing it, are at obvious risk for unplanned pregnancies or unwanted births. This paper examines the factors that influence women to switch from Intrauterine Contraceptive Device (IUCD to other methods instead of terminating contraceptive usage altogether. Methods. The data used for this study comes from a larger cross-sectional survey conducted in nine (9 randomly selected districts of Sindh and Punjab provinces of Pakistan, during January 2011. Using Stata 11.2, we analyzed data on 333 women, who reported the removal of IUCDs due to reasons other than the desire to get pregnant. Results. We found that 39.9% of the women do not switch to another method of contraception within one month after IUCD discontinuation. Use of contraception before IUCD insertion increases the odds for method switching by 2.26 times after removal. Similarly, postremoval follow-up by community health worker doubles (OR = 2.0 the chances of method switching. Compared with women who received free IUCD service (via voucher scheme, the method switching is 2.01 times higher among women who had paid for IUCD insertion. Conclusion. To increase the likelihood of method switching among IUCD discontinuers this study emphasizes the need for postremoval client counseling, follow-up by healthcare provider, improved choices to a wider range of contraceptives for poor clients, and user satisfaction.

  6. Resistive switching memories in MoS{sub 2} nanosphere assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiao-Yong, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China); State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Yin, Zong-You [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Xu, Chun-Xiang, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn; Dai, Jun [State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Hu, Jing-Guo, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)

    2014-01-20

    A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

  7. On a mechanism of switching off low-hybrid run away currents in tokamak devices

    International Nuclear Information System (INIS)

    Budnikov, V.N.; Esipov, L.A.; Irzak, M.A.

    1990-01-01

    The problem of the generation of low-hybrid run-away currents (LR) in tokamak devices is described. The mechanism of switching off LRCs is considered. Qualitative representation of the density limit, the transitions of which stops the generation of currents, is given

  8. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

    International Nuclear Information System (INIS)

    Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

    2012-01-01

    In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

  9. Platform for efficient switching between multiple devices in the intensive care unit.

    Science.gov (United States)

    De Backere, F; Vanhove, T; Dejonghe, E; Feys, M; Herinckx, T; Vankelecom, J; Decruyenaere, J; De Turck, F

    2015-01-01

    This article is part of the Focus Theme of METHODS of Information in Medicine on "Managing Interoperability and Complexity in Health Systems". Handheld computers, such as tablets and smartphones, are becoming more and more accessible in the clinical care setting and in Intensive Care Units (ICUs). By making the most useful and appropriate data available on multiple devices and facilitate the switching between those devices, staff members can efficiently integrate them in their workflow, allowing for faster and more accurate decisions. This paper addresses the design of a platform for the efficient switching between multiple devices in the ICU. The key functionalities of the platform are the integration of the platform into the workflow of the medical staff and providing tailored and dynamic information at the point of care. The platform is designed based on a 3-tier architecture with a focus on extensibility, scalability and an optimal user experience. After identification to a device using Near Field Communication (NFC), the appropriate medical information will be shown on the selected device. The visualization of the data is adapted to the type of the device. A web-centric approach was used to enable extensibility and portability. A prototype of the platform was thoroughly evaluated. The scalability, performance and user experience were evaluated. Performance tests show that the response time of the system scales linearly with the amount of data. Measurements with up to 20 devices have shown no performance loss due to the concurrent use of multiple devices. The platform provides a scalable and responsive solution to enable the efficient switching between multiple devices. Due to the web-centric approach new devices can easily be integrated. The performance and scalability of the platform have been evaluated and it was shown that the response time and scalability of the platform was within an acceptable range.

  10. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    Science.gov (United States)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  11. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  12. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    International Nuclear Information System (INIS)

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  13. Automatic limit switch system for scintillation device and method of operation

    International Nuclear Information System (INIS)

    Brunnett, C.J.; Ioannou, B.N.

    1976-01-01

    A scintillation scanner is described having an automatic limit switch system for setting the limits of travel of the radiation detection device which is carried by a scanning boom. The automatic limit switch system incorporates position responsive circuitry for developing a signal representative of the position of the boom, reference signal circuitry for developing a signal representative of a selected limit of travel of the boom, and comparator circuitry for comparng these signals in order to control the operation of a boom drive and indexing mechanism. (author)

  14. Ground-state thermodynamics of bistable redox-active donor-acceptor mechanically interlocked molecules.

    Science.gov (United States)

    Fahrenbach, Albert C; Bruns, Carson J; Cao, Dennis; Stoddart, J Fraser

    2012-09-18

    Fashioned through billions of years of evolution, biological molecular machines, such as ATP synthase, myosin, and kinesin, use the intricate relative motions of their components to drive some of life's most essential processes. Having control over the motions in molecules is imperative for life to function, and many chemists have designed, synthesized, and investigated artificial molecular systems that also express controllable motions within molecules. Using bistable mechanically interlocked molecules (MIMs), based on donor-acceptor recognition motifs, we have sought to imitate the sophisticated nanoscale machines present in living systems. In this Account, we analyze the thermodynamic characteristics of a series of redox-switchable [2]rotaxanes and [2]catenanes. Control and understanding of the relative intramolecular movements of components in MIMs have been vital in the development of a variety of applications of these compounds ranging from molecular electronic devices to drug delivery systems. These bistable donor-acceptor MIMs undergo redox-activated switching between two isomeric states. Under ambient conditions, the dominant translational isomer, the ground-state coconformation (GSCC), is in equilibrium with the less favored translational isomer, the metastable-state coconformation (MSCC). By manipulating the redox state of the recognition site associated with the GSCC, we can stimulate the relative movements of the components in these bistable MIMs. The thermodynamic parameters of model host-guest complexes provide a good starting point to rationalize the ratio of GSCC to MSCC at equilibrium. The bistable [2]rotaxanes show a strong correlation between the relative free energies of model complexes and the ground-state distribution constants (K(GS)). This relationship does not always hold for bistable [2]catenanes, most likely because of the additional steric and electronic constraints present when the two rings are mechanically interlocked with each other

  15. 3-5 modulation and switching devices for optical systems applications

    Science.gov (United States)

    Singh, Jasprit; Bhattacharya, Pallab

    1995-04-01

    The thrust for this three year program has been to develop novel devices and systems applications for multiple quantum well based devices. We have investigated architectures based upon the quantum confined Stark effect (QCSE), a means by which excitonic resonances in a quantum well are electric field tuned to shift the peaked absorption spectrum of the material. The devices based upon this concept have been used, in the past, to realize switching structures employing the characteristic negative differential resistance available in PIN-MQW diodes under illumination. We have focuses, primarily on three schemes based upon the QCSE, to extend the utility of quantum well based devices. Firstly, we have developed, tested and optimized a novel tunable optical filter for wavelength selective applications. Secondly, we have demonstrated an MQW based scheme for optical pattern recognition which we have applied towards header recognition in a packet switching network environment. Thirdly, we have extended previous MQW based switching schemes to implement an optical read only memory (ROM) which can store two bits of information on a single sight, read by two different probe wavelengths of light.

  16. Simulating the room-temperature dynamic motion of a ferromagnetic vortex in a bistable potential

    Science.gov (United States)

    Haber, E.; Badea, R.; Berezovsky, J.

    2018-05-01

    The ability to precisely and reliably control the dynamics of ferromagnetic (FM) vortices could lead to novel nonvolatile memory devices and logic gates. Intrinsic and fabricated defects in the FM material can pin vortices and complicate the dynamics. Here, we simulated switching a vortex between bistable pinning sites using magnetic field pulses. The dynamic motion was modeled with the Thiele equation for a massless, rigid vortex subject to room-temperature thermal noise. The dynamics were explored both when the system was at zero temperature and at room-temperature. The probability of switching for different pulses was calculated, and the major features are explained using the basins of attraction map of the two pinning sites.

  17. Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

    Science.gov (United States)

    Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

    2018-02-01

    Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

  18. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong

    2015-05-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    Science.gov (United States)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  20. Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

    KAUST Repository

    Zheng, Yue Bing

    2009-02-11

    A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

  1. Active Molecular Plasmonics: Controlling Plasmon Resonances with Molecular Switches

    KAUST Repository

    Zheng, Yue Bing; Yang, Ying-Wei; Jensen, Lasse; Fang, Lei; Juluri, Bala Krishna; Flood, Amar H.; Weiss, Paul S.; Stoddart, J. Fraser; Huang, Tony Jun

    2009-01-01

    A gold nanodisk array, coated with bistable, redox-controllable [2]rotaxane molecules, when exposed to chemical oxidants and reductants, undergoes switching of its plasmonic properties reversibly. By contrast, (i) bare gold nanodisks and (ii) disks coated with a redox-active, but mechanically inert, control compound do not display surface-plasmon-based switching. Along with calculations based on time-dependent density functional theory, these experimental observations suggest that the nanoscale movements within surface-bound “molecular machines” can be used as the active components in plasmonic devices.

  2. Using temperature-switching approach to evaluate the ELDRS of bipolar devices

    Science.gov (United States)

    Li, Xiaolong; Lu, Wu; Wang, Xin; Guo, Qi; Yu, Xin; He, Chengfa; Sun, Jing; Liu, Mohan; Yao, Shuai; Wei, Xinyu

    2017-12-01

    Enhanced low-dose rate sensitivity (ELDRS) exhibited at low-dose rates (LDRs) by most bipolar devices is considered as one of the main concerns for spacecraft reliability. In this work, a time-saving and conservative approach - temperature-switching approach (TSA) - to simulate the ELDRS of bipolar devices is presented. Good agreement is observed between the predictive curve obtained with the TSA and the LDR data, and TSA provides us with a new insight into the test technique for ELDRS. Additionally, the mechanisms of TSA are analyzed in this paper.

  3. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  4. Large-Scale Analysis of Network Bistability for Human Cancers

    Science.gov (United States)

    Shiraishi, Tetsuya; Matsuyama, Shinako; Kitano, Hiroaki

    2010-01-01

    Protein–protein interaction and gene regulatory networks are likely to be locked in a state corresponding to a disease by the behavior of one or more bistable circuits exhibiting switch-like behavior. Sets of genes could be over-expressed or repressed when anomalies due to disease appear, and the circuits responsible for this over- or under-expression might persist for as long as the disease state continues. This paper shows how a large-scale analysis of network bistability for various human cancers can identify genes that can potentially serve as drug targets or diagnosis biomarkers. PMID:20628618

  5. On the functional relevance of frontal cortex for passive and voluntarily controlled bistable vision.

    Science.gov (United States)

    de Graaf, Tom A; de Jong, Maartje C; Goebel, Rainer; van Ee, Raymond; Sack, Alexander T

    2011-10-01

    In bistable vision, one constant ambiguous stimulus leads to 2 alternating conscious percepts. This perceptual switching occurs spontaneously but can also be influenced through voluntary control. Neuroimaging studies have reported that frontal regions are activated during spontaneous perceptual switches, leading some researchers to suggest that frontal regions causally induce perceptual switches. But the opposite also seems possible: frontal activations may themselves be caused by spontaneous switches. Classically implicated in attentional processes, these same regions are also candidates for the origins of voluntary control over bistable vision. Here too, it remains unknown whether frontal cortex is actually functionally relevant. It is even possible that spontaneous perceptual switches and voluntarily induced switches are mediated by the same top-down mechanisms. To directly address these issues, we here induced "virtual lesions," with transcranial magnetic stimulation, in frontal, parietal, and 2 lower level visual cortices using an established ambiguous structure-from-motion stimulus. We found that dorsolateral prefrontal cortex was causally relevant for voluntary control over perceptual switches. In contrast, we failed to find any evidence for an active role of frontal cortex in passive bistable vision. Thus, it seems the same pathway used for willed top-down modulation of bistable vision is not used during passive bistable viewing.

  6. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  7. The unsaturated bistable stochastic resonance system.

    Science.gov (United States)

    Zhao, Wenli; Wang, Juan; Wang, Linze

    2013-09-01

    We investigated the characteristics of the output saturation of the classical continuous bistable system (saturation bistable system) and its impact on stochastic resonance (SR). We further proposed a piecewise bistable SR system (unsaturated bistable system) and developed the expression of signal-to-noise ratio (SNR) using the adiabatic approximation theory. Compared with the saturation bistable system, the SNR is significantly improved in our unsaturated bistable SR system. The numerical simulation showed that the unsaturated bistable system performed better in extracting weak signals from strong background noise than the saturation bistable system.

  8. Controlling bistability by linear augmentation

    International Nuclear Information System (INIS)

    Sharma, Pooja Rani; Shrimali, Manish Dev; Prasad, Awadhesh; Feudel, Ulrike

    2013-01-01

    In many bistable oscillating systems only one of the attractors is desired to possessing certain system performance. We present a method to drive a bistable system to a desired target attractor by annihilating the other one. This shift from bistability to monostability is achieved by augmentation of the nonlinear oscillator with a linear control system. For a proper choice of the control function one of the attractors disappears at a critical coupling strength in an control-induced boundary crisis. This transition from bistability to monostability is demonstrated with two paradigmatic examples, the autonomous Chua oscillator and a neuronal system with a periodic input signal.

  9. Performance comparison of hybrid resistive switching devices based on solution-processable nanocomposites

    Science.gov (United States)

    Rajan, Krishna; Roppolo, Ignazio; Bejtka, Katarzyna; Chiappone, Annalisa; Bocchini, Sergio; Perrone, Denis; Pirri, Candido Fabrizio; Ricciardi, Carlo; Chiolerio, Alessandro

    2018-06-01

    The present work compares the influence of different polymer matrices on the performance of planar asymmetric Resistive Switching Devices (RSDs) based on silver nitrate and Ionic Liquid (IL). PolyVinyliDene Fluoride-HexaFluoroPropylene (PVDF-HFP), PolyEthylene Oxide (PEO), PolyMethyl MethAcrylate (PMMA) and a blend of PVDF-HFP and PEO were used as matrices and compared. RSDs represent perhaps the most promising electron device to back the More than Moore development, and our approach through functional polymers enables low temperature processing and gives compatibility towards flexible/stretchable/wearable equipment. The switching mechanism in all the four sample families is explained by means of a filamentary conduction. A huge difference in the cyclability and the On/Off ratio is experienced when changing the active polymers and explained based on the polymer crystallinity degree and general morphology of the prepared nanocomposite. It is worth noting that all the RSDs discussed here present good switching behaviour with reasonable endurance. The current study displays one of the most cost-effective and effortless ways to produce an RSD based on solution-processable materials.

  10. Topical Meeting on Optical Bistability Held at Rochester, New York on 15-17 June 1983.

    Science.gov (United States)

    1983-01-01

    ThB16-1 SELF-BEATING INSTABILITIES IN BISTABLE DEVICES J.A. MARTIN-PEREDA .. M.A. MURIEL DEPARTAMENTO DE ELECTRONICA CUANTICA E.T.S. ING...OPTICAL BISTABLL SYSTEMS J.A. MARTIN PEREDA M.A. MURIEL ; DEPARTAMENIO DE ELECTRONICA CUANTICA E.T.S. ING. TELLCOMUNICACION UNIVERSIDAD POLITECNICA DE

  11. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    International Nuclear Information System (INIS)

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-01-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  12. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2121 (United States)

    2016-08-21

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  13. BRIEF COMMUNICATION: Electrothermal bistability tuning in a large displacement micro actuator

    Science.gov (United States)

    Gerson, Y.; Krylov, S.; Ilic, B.

    2010-11-01

    We report on an approach allowing simple yet efficient tuning of the bistability properties in large displacement micro actuators. The devices fabricated from silicon on insulator (SOI) wafers using a deep reactive ion etching (DRIE)-based process incorporate elastic suspension realized as a pair of beams initially curved in-plane and are operated electrostatically by a comb-drive transducer. The curvature of beam and therefore the stability characteristics of the suspension are controlled by passing a current through the suspension and resistive heating the beam material. Experimental results, which are in good agreement with the finite elements model predictions, demonstrate the feasibility of the suggested approach and show that the application of a small tuning current increases the device deflection from 42 to 56 µm, allows adjustment of the critical snap-through and snap-back voltages and makes it possible the control of latching without an additional electrode. The approach can be efficiently implemented in electrical and optical switches and threshold inertial and mass sensors where the use of long displacement actuators with an adjustable bistability range is beneficial.

  14. Improvement on Main/backup Controller Switching Device of the Nozzle Throat Area Control System for a Turbofan Aero Engine

    Science.gov (United States)

    Li, Jie; Duan, Minghu; Yan, Maode; Li, Gang; Li, Xiaohui

    2014-06-01

    A full authority digital electronic controller (FADEC) equipped with a full authority hydro-mechanical backup controller (FAHMBC) is adopted as the nozzle throat area control system (NTACS) of a turbofan aero engine. In order to ensure the switching reliability of the main/backup controller, the nozzle throat area control switching valve was improved from three-way convex desktop slide valve to six-way convex desktop slide valve. Simulation results show that, if malfunctions of FAEDC occur and abnormal signals are outputted from FADEC, NTACS will be seriously influenced by the main/backup controller switching in several working states, while NTACS will not be influenced by using the improved nozzle throat area control switching valve, thus the controller switching process will become safer and smoother and the working reliability of this turbofan aero engine is improved by the controller switching device improvement.

  15. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  16. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    International Nuclear Information System (INIS)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin

    2011-01-01

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  17. On-Chip Fluorescence Switching System for Constructing a Rewritable Random Access Data Storage Device.

    Science.gov (United States)

    Nguyen, Hoang Hiep; Park, Jeho; Hwang, Seungwoo; Kwon, Oh Seok; Lee, Chang-Soo; Shin, Yong-Beom; Ha, Tai Hwan; Kim, Moonil

    2018-01-10

    We report the development of on-chip fluorescence switching system based on DNA strand displacement and DNA hybridization for the construction of a rewritable and randomly accessible data storage device. In this study, the feasibility and potential effectiveness of our proposed system was evaluated with a series of wet experiments involving 40 bits (5 bytes) of data encoding a 5-charactered text (KRIBB). Also, a flexible data rewriting function was achieved by converting fluorescence signals between "ON" and "OFF" through DNA strand displacement and hybridization events. In addition, the proposed system was successfully validated on a microfluidic chip which could further facilitate the encoding and decoding process of data. To the best of our knowledge, this is the first report on the use of DNA hybridization and DNA strand displacement in the field of data storage devices. Taken together, our results demonstrated that DNA-based fluorescence switching could be applicable to construct a rewritable and randomly accessible data storage device through controllable DNA manipulations.

  18. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  19. Distributed processing in bistable perception

    NARCIS (Netherlands)

    Knapen, T.H.J.

    2007-01-01

    A very incisive way of studying visual awareness and the mechanisms that underlie it, it to use bistable perception. In bistable perception, an observer's perceptual state alternates between one interpretation and its mutually exclusive counterpart while the stimulus remains the same. This gives us

  20. On the bistable zone of milling processes.

    Science.gov (United States)

    Dombovari, Zoltan; Stepan, Gabor

    2015-09-28

    A modal-based model of milling machine tools subjected to time-periodic nonlinear cutting forces is introduced. The model describes the phenomenon of bistability for certain cutting parameters. In engineering, these parameter domains are referred to as unsafe zones, where steady-state milling may switch to chatter for certain perturbations. In mathematical terms, these are the parameter domains where the periodic solution of the corresponding nonlinear, time-periodic delay differential equation is linearly stable, but its domain of attraction is limited due to the existence of an unstable quasi-periodic solution emerging from a secondary Hopf bifurcation. A semi-numerical method is presented to identify the borders of these bistable zones by tracking the motion of the milling tool edges as they might leave the surface of the workpiece during the cutting operation. This requires the tracking of unstable quasi-periodic solutions and the checking of their grazing to a time-periodic switching surface in the infinite-dimensional phase space. As the parameters of the linear structural behaviour of the tool/machine tool system can be obtained by means of standard modal testing, the developed numerical algorithm provides efficient support for the design of milling processes with quick estimates of those parameter domains where chatter can still appear in spite of setting the parameters into linearly stable domains. © 2015 The Authors.

  1. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  2. A review of the recent research on vibration energy harvesting via bistable systems

    International Nuclear Information System (INIS)

    Harne, R L; Wang, K W

    2013-01-01

    The investigation of the conversion of vibrational energy into electrical power has become a major field of research. In recent years, bistable energy harvesting devices have attracted significant attention due to some of their unique features. Through a snap-through action, bistable systems transition from one stable state to the other, which could cause large amplitude motion and dramatically increase power generation. Due to their nonlinear characteristics, such devices may be effective across a broad-frequency bandwidth. Consequently, a rapid engagement of research has been undertaken to understand bistable electromechanical dynamics and to utilize the insight for the development of improved designs. This paper reviews, consolidates, and reports on the major efforts and findings documented in the literature. A common analytical framework for bistable electromechanical dynamics is presented, the principal results are provided, the wide variety of bistable energy harvesters are described, and some remaining challenges and proposed solutions are summarized. (topical review)

  3. 49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

    Science.gov (United States)

    2010-10-01

    ... rail assemblies or other transition devices on moveable bridges. 213.235 Section 213.235 Transportation... assemblies or other transition devices on moveable bridges. (a) Except as provided in paragraph (c) of this section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

  4. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    DEFF Research Database (Denmark)

    Ma, Ke; Blaabjerg, Frede

    2012-01-01

    Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because...

  5. Realization of transient memory-loss with NiO-based resistive switching device

    Science.gov (United States)

    Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

    2012-11-01

    A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

  6. Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

    Science.gov (United States)

    Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M

    2009-03-04

    We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  7. Conductance switching in Ag2S devices fabricated by in situ sulfurization

    International Nuclear Information System (INIS)

    Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van; Fu, W T

    2009-01-01

    We report a simple and reproducible method to fabricate switchable Ag 2 S devices. The α-Ag 2 S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag 2 S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag 2 S, increasing the Ag + ion mobility. The as-fabricated Ag 2 S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  8. Conductance switching in Ag{sub 2}S devices fabricated by in situ sulfurization

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M; Molen, S J van der; Hesselberth, M B; Ruitenbeek, J M van [Kamerlingh Onnes Laboratorium, Universiteit Leiden, PO Box 9504, 2300 RA Leiden (Netherlands); Fu, W T [Leiden Institute of Chemistry, Gorlaeus Laboratorium, Universiteit Leiden, PO Box 9502, 2300 RA Leiden (Netherlands)], E-mail: ruitenbeek@physics.leidenuniv.nl

    2009-03-04

    We report a simple and reproducible method to fabricate switchable Ag{sub 2}S devices. The {alpha}-Ag{sub 2}S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag{sub 2}S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag{sub 2}S, increasing the Ag{sup +} ion mobility. The as-fabricated Ag{sub 2}S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.

  9. Medium-voltage switching devices: State-of-the art on technical standards; Mittelspannungs-Schaltanlagen: Stand der technischen Normen

    Energy Technology Data Exchange (ETDEWEB)

    Voss, Gerhard [Ingenieurbuero IGV Elektrotechnik, Ladenburg (Germany)

    2008-11-15

    With enhanced exchange box systems many low voltage switch devices can be equipped more compact (less volume demand), cost friendly and more reliable because of advanced arc discharge safety engineering. Presented is utilization and operation in the facility managment and industrial applications in detail. In the last years operation-important standards have been revised for planners and users. So users and planners have to occupy with new standards for medium-voltage switching devices. This knowledge forms the conditions to design devices in future extensively to individual demands of the company and according to standards. (GL)

  10. Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Masatoshi; Okabe, Kyota [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Kimura, Takashi [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2016-01-11

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

  11. Fast Switching Electrochromic Devices Containing Optimized BEMA/PEGMA Gel Polymer Electrolytes

    Directory of Open Access Journals (Sweden)

    N. Garino

    2013-01-01

    Full Text Available An optimized thermoset gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol methyl ether methacrylate (BEMA/PEGMA was prepared by facile photo-induced free radical polymerisation technique and tested for the first time in electrochromic devices (ECD combining WO3 sputtered on ITO as cathodes and V2O5 electrodeposited on ITO as anodes. The behaviour of the prepared ECD was investigated electrochemically and electro-optically. The ECD transmission spectrum was monitored in the visible and near-infrared region by varying applied potential. A switching time of ca. 2 s for Li+ insertion (coloring and of ca. 1 s for Li+ de-insertion (bleaching were found. UV-VIS spectroelectrochemical measurements evidenced a considerable contrast between bleached and colored state along with a good stability over repeated cycles. The reported electrochromic devices showed a considerable enhancement of switching time with respect to the previously reported polymeric ECD indicating that they are good candidates for the implementation of intelligent windows and smart displays.

  12. Chaos in a new bistable rotating electromechanical system

    International Nuclear Information System (INIS)

    Tsapla Fotsa, R.; Woafo, P.

    2016-01-01

    Highlights: • A new electromechanical system with rotating arm and bistable potential energy is studied. • The bistability is generated by the interaction of three permanent magnets, one fixed at the end of the arm and two other fixed at equal distance relative to the central position of the arm. • It exhibits dissipative and Hamiltonian chaos. • Such a bistable electromechanical system can be used as the actuation part of chaotic sieves and mixers. - Abstract: A device consisting of an induction motor activating a rotating rigid arm is designed and comprises a bistable potential due to the presence of three permanent magnets. Its mathematical equations are established and the numerical results both in the absence and in the presence of magnets are compared. The generation of chaotic behavior is achieved using two different external excitations: sinewave and square wave. In the presence of magnets, the system presents periodic and dissipative chaotic dynamics. Approximating the global potential energy to a bistable quartic potential, the Melnikov method is used to derive the conditions for the appearance of Hamiltonian chaos. Such a device can be used for industrial and domestic applications for mixing and sieving activities.

  13. The Independent and Shared Mechanisms of Intrinsic Brain Dynamics: Insights From Bistable Perception

    Directory of Open Access Journals (Sweden)

    Teng Cao

    2018-04-01

    Full Text Available In bistable perception, constant input leads to alternating perception. The dynamics of the changing perception reflects the intrinsic dynamic properties of the “unconscious inferential” process in the brain. Under the same condition, individuals differ in how fast they experience the perceptual alternation. In this study, testing many forms of bistable perception in a large number of observers, we investigated the key question of whether there is a general and common mechanism or multiple and independent mechanisms that control the dynamics of the inferential brain. Bistable phenomena tested include binocular rivalry, vase-face, Necker cube, moving plaid, motion induced blindness, biological motion, spinning dancer, rotating cylinder, Lissajous-figure, rolling wheel, and translating diamond. Switching dynamics for each bistable percept was measured in 100 observers. Results show that the switching rates of subsets of bistable percept are highly correlated. The clustering of dynamic properties of some bistable phenomena but not an overall general control of switching dynamics implies that the brain’s inferential processes are both shared and independent – faster in constructing 3D structure from motion does not mean faster in integrating components into an objects.

  14. Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

    Science.gov (United States)

    Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

    2018-06-01

    Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

  15. Optimization of Bistable Viscoelastic Systems

    DEFF Research Database (Denmark)

    Jensen, Kristian Ejlebjærg; Szabo, Peter; Okkels, Fridolin

    2014-01-01

    driving pressure corresponding to the point of bistability, such that the effect is enhanced. The point of bistability is, however, not explicitly contained in the solution, so we opt for a heuristic approach based on the dissipation ratio between the asymmetric and unstable symmetric flow solutions. We...... find a design that significantly reduces the driving pressure required for bistability, and furthermore is in agreement with the approach followed by experimental researchers. Furthermore, by comparing the two asymmetric solutions, we succesfully apply the same approach to a problem with two fluids...

  16. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  17. Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

    Science.gov (United States)

    Daniel, Erik Stephen

    In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

  18. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  19. A hierarchical stochastic model for bistable perception.

    Directory of Open Access Journals (Sweden)

    Stefan Albert

    2017-11-01

    Full Text Available Viewing of ambiguous stimuli can lead to bistable perception alternating between the possible percepts. During continuous presentation of ambiguous stimuli, percept changes occur as single events, whereas during intermittent presentation of ambiguous stimuli, percept changes occur at more or less regular intervals either as single events or bursts. Response patterns can be highly variable and have been reported to show systematic differences between patients with schizophrenia and healthy controls. Existing models of bistable perception often use detailed assumptions and large parameter sets which make parameter estimation challenging. Here we propose a parsimonious stochastic model that provides a link between empirical data analysis of the observed response patterns and detailed models of underlying neuronal processes. Firstly, we use a Hidden Markov Model (HMM for the times between percept changes, which assumes one single state in continuous presentation and a stable and an unstable state in intermittent presentation. The HMM captures the observed differences between patients with schizophrenia and healthy controls, but remains descriptive. Therefore, we secondly propose a hierarchical Brownian model (HBM, which produces similar response patterns but also provides a relation to potential underlying mechanisms. The main idea is that neuronal activity is described as an activity difference between two competing neuronal populations reflected in Brownian motions with drift. This differential activity generates switching between the two conflicting percepts and between stable and unstable states with similar mechanisms on different neuronal levels. With only a small number of parameters, the HBM can be fitted closely to a high variety of response patterns and captures group differences between healthy controls and patients with schizophrenia. At the same time, it provides a link to mechanistic models of bistable perception, linking the group

  20. A hierarchical stochastic model for bistable perception.

    Science.gov (United States)

    Albert, Stefan; Schmack, Katharina; Sterzer, Philipp; Schneider, Gaby

    2017-11-01

    Viewing of ambiguous stimuli can lead to bistable perception alternating between the possible percepts. During continuous presentation of ambiguous stimuli, percept changes occur as single events, whereas during intermittent presentation of ambiguous stimuli, percept changes occur at more or less regular intervals either as single events or bursts. Response patterns can be highly variable and have been reported to show systematic differences between patients with schizophrenia and healthy controls. Existing models of bistable perception often use detailed assumptions and large parameter sets which make parameter estimation challenging. Here we propose a parsimonious stochastic model that provides a link between empirical data analysis of the observed response patterns and detailed models of underlying neuronal processes. Firstly, we use a Hidden Markov Model (HMM) for the times between percept changes, which assumes one single state in continuous presentation and a stable and an unstable state in intermittent presentation. The HMM captures the observed differences between patients with schizophrenia and healthy controls, but remains descriptive. Therefore, we secondly propose a hierarchical Brownian model (HBM), which produces similar response patterns but also provides a relation to potential underlying mechanisms. The main idea is that neuronal activity is described as an activity difference between two competing neuronal populations reflected in Brownian motions with drift. This differential activity generates switching between the two conflicting percepts and between stable and unstable states with similar mechanisms on different neuronal levels. With only a small number of parameters, the HBM can be fitted closely to a high variety of response patterns and captures group differences between healthy controls and patients with schizophrenia. At the same time, it provides a link to mechanistic models of bistable perception, linking the group differences to

  1. Dynamic optical bistability in resonantly enhanced Raman generation

    International Nuclear Information System (INIS)

    Novikova, I.; Phillips, D.F.; Zibrov, A.S.; Andre, A.; Walsworth, R.L.

    2004-01-01

    We report observations of novel dynamic behavior in resonantly enhanced stimulated Raman scattering in Rb vapor. In particular, we demonstrate a dynamic hysteresis of the Raman scattered optical field in response to changes of the drive laser field intensity and/or frequency. This effect may be described as a dynamic form of optical bistability resulting from the formation and decay of atomic coherence. We have applied this phenomenon to the realization of an all-optical switch

  2. Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices.

    Science.gov (United States)

    Du, Haiwei; Wan, Tao; Qu, Bo; Cao, Fuyang; Lin, Qianru; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-06-21

    Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ -1 with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ TC ) (13.55 × 10 -3 Ω -1 ). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO x core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO x shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO x /Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

  3. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong; Chen, Tao; Lubineau, Gilles

    2017-01-01

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film's structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  4. A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

    KAUST Repository

    Tai, Yanlong

    2017-08-30

    Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film\\'s structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

  5. A Miniature Coupled Bistable Vibration Energy Harvester

    International Nuclear Information System (INIS)

    Zhu, D; Arthur, D C; Beeby, S P

    2014-01-01

    This paper reports the design and test of a miniature coupled bistable vibration energy harvester. Operation of a bistable structure largely depends on vibration amplitude rather than frequency, which makes it very promising for wideband vibration energy harvesting applications. A coupled bistable structure consists of a pair of mobile magnets that create two potential wells and thus the bistable phenomenon. It requires lower excitation to trigger bistable operation compared to conventional bistable structures. Based on previous research, this work focused on miniaturisation of the coupled bistable structure for energy harvesting application. The proposed bistable energy harvester is a combination of a Duffing's nonlinear structure and a linear assisting resonator. Experimental results show that the output spectrum of the miniature coupled bistable vibration energy harvester was the superposition of several spectra. It had a higher maximum output power and a much greater bandwidth compared to simply the Duffing's structure without the assisting resonator

  6. A bistable mechanism for chord extension morphing rotors

    Science.gov (United States)

    Johnson, Terrence; Frecker, Mary; Gandhi, Farhan

    2009-03-01

    Research efforts have shown that helicopter rotor blade morphing is an effective means to improve flight performance. Previous example of rotor blade morphing include using smart-materials for trailing deflection and rotor blade twist and tip twist, the development of a comfortable airfoil using compliant mechanisms, the use of a Gurney flap for air-flow deflection and centrifugal force actuated device to increase the span of the blade. In this paper we explore the use of a bistable mechanism for rotor morphing, specifically, blade chord extension using a bistable arc. Increasing the chord of the rotor blade is expected to generate more lift-load and improve helicopter performance. Bistable or "snap through" mechanisms have multiple stable equilibrium states and are a novel way to achieve large actuation output stroke. Bistable mechanisms do not require energy input to maintain a stable equilibrium state as both states do not require locking. In this work, we introduce a methodology for the design of bistable arcs for chord morphing using the finite element analysis and pseudo-rigid body model, to study the effect of different arc types, applied loads and rigidity on arc performance.

  7. Effects of electrode material and configuration on the characteristics of planar resistive switching devices

    KAUST Repository

    Peng, H.Y.

    2013-11-13

    We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).

  8. Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

    Science.gov (United States)

    Kayiranga, Thierry

    Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

  9. Temporal nonlocality in bistable perception

    Science.gov (United States)

    Atmanspacher, Harald; Filk, Thomas

    2012-12-01

    A novel conceptual framework for theoretical psychology is presented and illustrated for the example of bistable perception. A basic formal feature of this framework is the non-commutativity of operations acting on mental states. A corresponding model for the bistable perception of ambiguous stimuli, the Necker-Zeno model, is sketched and some empirical evidence for it so far is described. It is discussed how a temporal nonlocality of mental states, predicted by the model, can be understood and tested.

  10. Single coil bistable, bidirectional micromechanical actuator

    Science.gov (United States)

    Tabat, Ned; Guckel, Henry

    1998-09-15

    Micromechanical actuators capable of bidirectional and bistable operation can be formed on substrates using lithographic processing techniques. Bistable operation of the microactuator is obtained using a single coil and a magnetic core with a gap. A plunger having two magnetic heads is supported for back and forth linear movement with respect to the gap in the magnetic core, and is spring biased to a neutral position in which the two heads are on each side of the gap in the core. The single electrical coil is coupled to the core and is provided with electrical current to attract one of the heads toward the core by reluctance action to drive the plunger to a limit of travel in one direction. The current is then cut off and the plunger returns by spring action toward the gap, whereafter the current is reapplied to the coil to attract the other head of the plunger by reluctance action to drive the plunger to its other limit of travel. This process can be repeated at a time when switching of the actuator is required.

  11. Fabrication of Nano-Crossbar Resistive Switching Memory Based on the Copper-Tantalum Pentoxide-Platinum Device Structure

    Science.gov (United States)

    Olga Gneri, Paula; Jardim, Marcos

    Resistive switching memory has been of interest lately not only for its simple metal-insulator-metal (MIM) structure but also for its promising ease of scalability an integration into current CMOS technologies like the Field Programmable Gate Arrays and other non-volatile memory applications. There are several resistive switching MIM combinations but under this scope of research, attention will be paid to the bipolar resistive switching characteristics and fabrication of Tantalum Pentaoxide sandwiched between platinum and copper. By changing the polarity of the voltage bias, this metal-insulator-metal (MIM) device can be switched between a high resistive state (OFF) and low resistive state (ON). The change in states is induced by an electrochemical metallization process, which causes a formation or dissolution of Cu metal filamentary paths in the Tantalum Pentaoxide insulator. There is very little thorough experimental information about the Cu-Ta 2O5-Pt switching characteristics when scaled to nanometer dimensions. In this light, the MIM structure was fabricated in a two-dimensional crossbar format. Also, with the limited available resources, a multi-spacer technique was formulated to localize the active device area in this MIM configuration to less than 20nm. This step is important in understanding the switching characteristics and reliability of this structure when scaled to nanometer dimensions.

  12. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    Science.gov (United States)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  13. Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

    Science.gov (United States)

    Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

    2017-12-01

    Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

  14. The effect of magnetic field on bistability in 1D photonic crystal doped by magnetized plasma and coupled nonlinear defects

    International Nuclear Information System (INIS)

    Mehdian, H.; Mohammadzahery, Z.; Hasanbeigi, A.

    2014-01-01

    In this work, we study the defect mode and bistability behavior of 1-D photonic band gap structure with magnetized plasma and coupled nonlinear defects. The transfer matrix method has been employed to investigate the magnetic field effect on defect mode frequency and bistability threshold. The obtained results show that the frequency of defect mode and bistability threshold can be altered, without changing the structure of the photonic multilayer. Therefore, the bistability behavior of the subjected structure in the presence of magnetized plasma can be utilized in manufacturing wide frequency range devices

  15. Bistable output from a coupled-resonator vertical-cavity laser diode

    International Nuclear Information System (INIS)

    Fischer, A. J.; Choquette, K. D.; Chow, W. W.; Allerman, A. A.; Geib, K.

    2000-01-01

    We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point

  16. Harnessing the bistable composite shells to design a tunable phononic band gap structure

    Science.gov (United States)

    Li, Yi; Xu, Yanlong

    2018-02-01

    By proposing a system composed of an array of bistable composite shells immersed in air, we develop a new class of periodic structure to control the propagation of sound. Through numerical investigation, we find that the acoustic band gap of this system can be switched on and off by triggering the snap through deformation of the bistable composite shells. The shape of cross section and filling fraction of unit cell can be altered by different number of bistable composite shells, and they have strong impact on the position and width of the band gap. The proposed concept paves the way of using the bistable structures to design a new class of metamaterials that can be enable to manipulate sound.

  17. Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

    Science.gov (United States)

    Yang, Jingjuan; Han, Xiaoxiao; Yuan, Peipei; Bian, Baoan; Wang, Yixiang

    2018-01-01

    We investigate the electronic transport properties of dihydroazulene (DHA) and vinylheptafulvene (VHF) molecule sandwiched between two carbon nanotubes using density functional theory and non-equilibrium Green's function. The device displays significantly switching behavior between DHA and VHF isomerizations. It is found the different substitution position of F in the molecule influences the switching ratio of device, which is analyzed by transmission spectra and molecular projected self-consistent Hamiltonian. The observed negative differential resistance effect is explained by transmission spectra and transmission eigenstates of transmission peak in the bias window. The observed reverse of current in VHF form in which two H atoms on the right side of the benzene ring of the molecule are replaced by F is explained by transmission spectra and molecule-electrode coupling with the varied bias. The results suggest that the reasonable substitution position of molecule may improve the switching ratio, displaying a potential application in future molecular circuit.

  18. Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hye-Jung; Wang, Gun-Uk; Kim, Dong-Yu; Hwang, Hyun-Sang; Lee, Tak-Hee

    2010-01-01

    The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

  19. Electron transfer dynamics of bistable single-molecule junctions

    DEFF Research Database (Denmark)

    Danilov, A.V; Kubatkin, S.; Kafanov, S. G.

    2006-01-01

    We present transport measurements of single-molecule junctions bridged by a molecule with three benzene rings connected by two double bonds and with thiol end-groups that allow chemical binding to gold electrodes. The I-V curves show switching behavior between two distinct states. By statistical ...... analysis of the switching events, we show that a 300 meV mode mediates the transition between the two states. We propose that breaking and reformation of a S-H bond in the contact zone between molecule and electrode explains the observed bistability....

  20. Bistable dynamics of a levitated nanoparticle (Presentation Recording)

    Science.gov (United States)

    Ricci, Francesco; Spasenovic, M.; Rica, Raúl A.; Novotny, Lukas; Quidant, Romain

    2015-08-01

    Bistable systems are ubiquitous in nature. Classical examples in chemistry and biology include relaxation kinetics in chemical reactions [1] and stochastic resonance processes such as neuron firing [2,3]. Likewise, bistable systems play a key role in signal processing and information handling at the nanoscale, giving rise to intriguing applications such as optical switches [4], coherent signal amplification [5,6] and weak forces detection [5]. The interest and applicability of bistable systems are intimately connected with the complexity of their dynamics, typically due to the presence of a large number of parameters and nonlinearities. Appropriate modeling is therefore challenging. Alternatively, the possibility to experimentally recreate bistable systems in a clean and controlled way has recently become very appealing, but elusive and complicated. With this aim, we combined optical tweezers with a novel active feedback-cooling scheme to develop a well-defined opto-mechanical platform reaching unprecedented performances in terms of Q-factor, frequency stability and force sensitivity [7,8]. Our experimental system consists of a single nanoparticle levitated in high vacuum with optical tweezers, which behaves as a non-linear (Duffing) oscillator under appropriate conditions. Here, we prove it to be an ideal tool for a deep study of bistability. We demonstrate bistability of the nanoparticle by noise activated switching between two oscillation states, discussing our results in terms of a double-well potential model. We also show the flexibility of our system in shaping the potential at will, in order to meet the conditions prescribed by any bistable system that could therefore then be simulated with our setup. References [1] T. Amemiya, T. Ohmori, M. Nakaiwa, T. Yamamoto, and T. Yamaguchi, "Modeling of Nonlinear Chemical Reaction Systems and Two-Parameter Stochastic Resonance," J. Biol. Phys. 25 (1999) 73 [2] F. Moss, L. M. Ward, and W. G. Sannita, "Stochastic

  1. A bistable electromagnetically actuated rotary gate microvalve

    International Nuclear Information System (INIS)

    Luharuka, Rajesh; Hesketh, Peter J

    2008-01-01

    Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor

  2. Unstable Modes and Order Parameters of Bistable Signaling Pathways at Saddle-Node Bifurcations: A Theoretical Study Based on Synergetics

    Directory of Open Access Journals (Sweden)

    Till D. Frank

    2016-01-01

    Full Text Available Mathematical modeling has become an indispensable part of systems biology which is a discipline that has become increasingly popular in recent years. In this context, our understanding of bistable signaling pathways in terms of mathematical modeling is of particular importance because such bistable components perform crucial functions in living cells. Bistable signaling pathways can act as switches or memory functions and can determine cell fate. In the present study, properties of mathematical models of bistable signaling pathways are examined from the perspective of synergetics, a theory of self-organization and pattern formation founded by Hermann Haken. At the heart of synergetics is the concept of so-called unstable modes or order parameters that determine the behavior of systems as a whole close to bifurcation points. How to determine these order parameters for bistable signaling pathways at saddle-node bifurcation points is shown. The procedure is outlined in general and an explicit example is worked out in detail.

  3. Perceptual incongruence influences bistability and cortical activation

    NARCIS (Netherlands)

    Brouwer, G.J.; Tong, F.; Hagoort, P.; van Ee, R.

    2009-01-01

    We employed a parametric psychophysical design in combination with functional imaging to examine the influence of metric changes in perceptual incongruence on perceptual alternation rates and cortical responses. Subjects viewed a bistable stimulus defined by incongruent depth cues; bistability

  4. GABA shapes the dynamics of bistable perception

    NARCIS (Netherlands)

    van Loon, A.M.; Knapen, T.; Scholte, H.S.; St. John-Saaltink, E.; Donner, T.H.; Lamme, V.A.F.

    2013-01-01

    Sometimes, perception fluctuates spontaneously between two distinct interpretations of a constant sensory input. These bistable perceptual phenomena provide a unique window into the neural mechanisms that create the contents of conscious perception. Models of bistable perception posit that mutual

  5. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  6. The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

    Directory of Open Access Journals (Sweden)

    Ke Ma

    2012-07-01

    Full Text Available Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance, these available power switching devices may have various thermal cycling behaviors, which will lead to converter solutions with very different cost, size and reliability performance. As a result, this paper aimed to investigate the thermal related characteristics of some important power switching devices. Their impact on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter is then evaluated under various operating conditions; the main focus will be on the grid connected inverter. It is concluded that the thermal performances of the 3L-NPC wind power converter can be significantly changed by the power device technology as well as their parallel configurations.

  7. Optical bistability without the rotating wave approximation

    Energy Technology Data Exchange (ETDEWEB)

    Sharaby, Yasser A., E-mail: Yasser_Sharaby@hotmail.co [Physics Department, Faculty of Applied Sciences, Suez Canal University, Suez (Egypt); Joshi, Amitabh, E-mail: ajoshi@eiu.ed [Department of Physics, Eastern Illinois University, Charleston, IL 61920 (United States); Hassan, Shoukry S., E-mail: Shoukryhassan@hotmail.co [Mathematics Department, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain)

    2010-04-26

    Optical bistability for two-level atomic system in a ring cavity is investigated outside the rotating wave approximation (RWA) using non-autonomous Maxwell-Bloch equations with Fourier decomposition up to first harmonic. The first harmonic output field component exhibits reversed or closed loop bistability simultaneously with the usual (anti-clockwise) bistability in the fundamental field component.

  8. Optical bistability without the rotating wave approximation

    International Nuclear Information System (INIS)

    Sharaby, Yasser A.; Joshi, Amitabh; Hassan, Shoukry S.

    2010-01-01

    Optical bistability for two-level atomic system in a ring cavity is investigated outside the rotating wave approximation (RWA) using non-autonomous Maxwell-Bloch equations with Fourier decomposition up to first harmonic. The first harmonic output field component exhibits reversed or closed loop bistability simultaneously with the usual (anti-clockwise) bistability in the fundamental field component.

  9. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

    Directory of Open Access Journals (Sweden)

    Jun He

    2012-03-01

    Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.

  10. Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

    OpenAIRE

    Liu, G.; Zhang, E. X.; Liang, C. D.; Bloodgood, M. A.; Salguero, T. T.; Fleetwood, D. M.; Balandin, A. A.

    2017-01-01

    The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persisten...

  11. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  12. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  13. Innovative Energy Harvester Design Using Bistable Mechanism With Compensational Springs In Gravity Field

    International Nuclear Information System (INIS)

    Vysotskyi, Bogdan; Parrain, Fabien; Lefeuvre, Elie; Aubry, Denis; Gaucher, Philippe

    2016-01-01

    The purpose of the presented work is to introduce the novel design of electrostatic energy harvester using bistable mechanism with compensational springs in gravity field capable of providing the output of several μW under the excitation of extremely small amplitude (up to 0.2g) and low frequency (10-100Hz). Presented energy harvester uses the bistable hysteresis modification to achieve low-frequency low-amplitude sensibility. It was demonstrated with finite element modelling (FEM) that hysteresis width produced by bistability is changing with a constant linear coefficient as a function of a compensational spring stiffness and thus a device sensitivity could be adjusted to the minimum point for the amplitude of external excitation. Further, highly non-linear bistable double curved beam mechanism assures the high sensitivity in frequencial domain due to the non-defined bandwidth. The equivalent circuit technique is used for simulating the device performance. (paper)

  14. Control of optical bistability and third-order nonlinearity via tunneling induced quantum interference in triangular quantum dot molecules

    International Nuclear Information System (INIS)

    Tian, Si-Cong; Tong, Cun-Zhu; Zhang, Jin-Long; Shan, Xiao-Nan; Fu, Xi-Hong; Zeng, Yu-Gang; Qin, Li; Ning, Yong-Qiang; Wan, Ren-Gang

    2015-01-01

    The optical bistability of a triangular quantum dot molecules embedded inside a unidirectional ring cavity is studied. The type, the threshold and the hysteresis loop of the optical bistability curves can be modified by the tunneling parameters, as well as the probe laser field. The linear and nonlinear susceptibilities of the medium are also studied to interpret the corresponding results. The physical interpretation is that the tunneling can induce the quantum interference, which modifies the linear and the nonlinear response of the medium. As a consequence, the characteristics of the optical bistability are changed. The scheme proposed here can be utilized for optimizing and controlling the optical switching process

  15. SiC-VJFETs power switching devices: an improved model and parameter optimization technique

    Science.gov (United States)

    Ben Salah, T.; Lahbib, Y.; Morel, H.

    2009-12-01

    Silicon carbide junction field effect transistor (SiC-JFETs) is a mature power switch newly applied in several industrial applications. SiC-JFETs are often simulated by Spice model in order to predict their electrical behaviour. Although such a model provides sufficient accuracy for some applications, this paper shows that it presents serious shortcomings in terms of the neglect of the body diode model, among many others in circuit model topology. Simulation correction is then mandatory and a new model should be proposed. Moreover, this paper gives an enhanced model based on experimental dc and ac data. New devices are added to the conventional circuit model giving accurate static and dynamic behaviour, an effect not accounted in the Spice model. The improved model is implemented into VHDL-AMS language and steady-state dynamic and transient responses are simulated for many SiC-VJFETs samples. Very simple and reliable optimization algorithm based on the optimization of a cost function is proposed to extract the JFET model parameters. The obtained parameters are verified by comparing errors between simulations results and experimental data.

  16. Bistable microvalve and microcatheter system

    Science.gov (United States)

    Seward, Kirk Patrick

    2003-05-20

    A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

  17. Optical bistability controlling light with light

    CERN Document Server

    Gibbs, Hyatt

    1985-01-01

    Optical Bistability: Controlling Light with Light focuses on optical bistability in nonlinear optical systems. Emphasis is on passive (non-laser) systems that exhibit reversible bistability with input intensity as the hysteresis variable, along with the physics and the potential applications of such systems for nonlinear optical signal processing. This book consists of seven chapters and begins with a historical overview of optical bistability in lasers and passive systems. The next chapter describes steady-state theories of optical bistability, including the Bonifacio-Lugiato model, as we

  18. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  19. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2017-01-01

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  20. Optical bistability and limiting in polymer dispersed liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yshino, K.; Tagawa, A.; Sadohara, Y.; Ozaki, M. (Osaka University, Osaka (Japan). Faculty of Engineering); Munezawa, T. (Ajinomoto Co. Inc., Tokyo (Japan)); Nomura, Y. (Takiron Co. Ltd., Osaka (Japan))

    1991-04-15

    The linear electro-optical effect of polymer dispersed liquid crystal (PDLC) and the nonlinear optical response of electrically feedbacked PDLC were studied. Electro-optical limiting and bistability were observed in PDLCs with negative and positive feedback, respectively. In the PDLC film with positive feedback gain, an optical hysteresis loop shifted toward a high intensity region with decreasing magnitude of the feedback gain. The switching between high and low transmission states in an optical bistable region was realized by controlling incident light, and the on-off switching by superimposing light pulse on incident light for an extremely short period (several hundreds {mu}s). As the light pulse was strong, the minimum pulse width required for switching was as short as 500 {mu}s or less. The on-off switching was also realized by shutting out the incident light for a period equivalent to the pulse width. Slower response times of the PDLC film required longer minimum pulse widths. 12 refs., 11 figs.

  1. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Li, E-mail: lizhang9@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Li, Ye; Shi, Jun [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Shi, Gaoquan [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Cao, Shaokui, E-mail: Caoshaokui@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2013-11-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10{sup 5}. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states.

  2. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    International Nuclear Information System (INIS)

    Zhang, Li; Li, Ye; Shi, Jun; Shi, Gaoquan; Cao, Shaokui

    2013-01-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10 5 . Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states

  3. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  4. Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices

    International Nuclear Information System (INIS)

    Thermadam, S. Puthen; Bhagat, S.K.; Alford, T.L.; Sakaguchi, Y.; Kozicki, M.N.; Mitkova, M.

    2010-01-01

    This paper presents a study of Cu diffusion at various temperatures in thin SiO 2 films and the influence of diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Cu-doped films. Film composition and diffusion products were analyzed using secondary ion mass spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10 -3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO 2 network and remains in elemental form after diffusion for the annealing conditions used. PMC resistive memory cells were fabricated with such Cu-diffused SiO 2 films and device performance, including the stability of the switching voltage, is discussed in the context of the material characteristics.

  5. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    International Nuclear Information System (INIS)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-01-01

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

  6. Flexible Bistable Cholesteric Reflective Displays

    Science.gov (United States)

    Yang, Deng-Ke

    2006-03-01

    Cholesteric liquid crystals (ChLCs) exhibit two stable states at zero field condition-the reflecting planar state and the nonreflecting focal conic state. ChLCs are an excellent candidate for inexpensive and rugged electronic books and papers. This paper will review the display cell structure,materials and drive schemes for flexible bistable cholesteric (Ch) reflective displays.

  7. Investigation of bistable perception with the "silhouette spinner": sit still, spin the dancer with your will.

    Science.gov (United States)

    Liu, Chao-Hsuan; Tzeng, Ovid J L; Hung, Daisy L; Tseng, Philip; Juan, Chi-Hung

    2012-05-01

    Many studies have used static and non-biologically related stimuli to investigate bistable perception and found that the percept is usually dominated by their intrinsic nature with some influence of voluntary control from the viewer. Here we used a dynamic stimulus of a rotating human body, the silhouette spinner illusion, to investigate how the viewers' intentions may affect their percepts. In two experiments, we manipulated observer intention (active or passive), fixation position (body or feet), and spinning velocity (fast, medium, or slow). Our results showed that the normalized alternating rate between two bistable percepts was greater when (1) participants actively attempted to switch percepts, (2) when participants fixated at the spinner's feet rather than the body, inducing as many as 25 switches of the bistable percepts within 1 min, and (3) when they watched the spinner at high velocity. These results suggest that a dynamic biologically-bistable percept can be quickly alternated by the viewers' intention. Furthermore, the higher alternating rate in the feet condition compared to the body condition suggests a role for biological meaningfulness in determining bistable percepts, where 'biologically plausible' interpretations are favored by the visual system. Copyright © 2012 Elsevier Ltd. All rights reserved.

  8. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  9. Chiroptical Molecular Switches 1; Principles and Syntheses.

    NARCIS (Netherlands)

    Lange, Ben de; Jager, Wolter F.; Feringa, Bernard

    1992-01-01

    The concept and the synthesis of the basic molecules for a chiroptical molecular switch are described. This molecular switch is based on photochemical interconversion of two bistable forms of chiral sterically overcrowded olefins. A large variety of these alkenes with different properties have been

  10. Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

    Science.gov (United States)

    Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

    2018-02-01

    In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

  11. Is there evidence for the added value and correct use of manual and automatically switching multimemory hearing devices? A scoping review

    NARCIS (Netherlands)

    de Graaff, Feike; Huysmans, Elke; Ket, Johannes C.F.; Merkus, Paul; Goverts, S. Theo; Leemans, C. René; Smits, Cas

    2018-01-01

    Objectives: To review literature on the use of manual and automatically switching multimemory devices by hearing aid and CI recipients, and to investigate if recipients appreciate and adequately use the ability to switch between programmes in various listening environments. Design: Literature was

  12. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  13. Controlling steady-state and dynamical properties of atomic optical bistability

    CERN Document Server

    Joshi, Amitabh

    2012-01-01

    This book provides a comprehensive introduction to the theoretical and experimental studies of atomic optical bistability and multistability, and their dynamical properties in systems with two- and three-level inhomogeneously-broadened atoms inside an optical cavity. By making use of the modified linear absorption and dispersion, as well as the greatly enhanced nonlinearity in the three-level electromagnetically induced transparency system, the optical bistablity and efficient all-optical switching can be achieved at relatively low laser powers, which can be well controlled and manipulated. Un

  14. Optical bistabilities of higher harmonics: Inhomogeneous and transverse effects

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, S.S., E-mail: Shoukryhassan@hotmail.com [Department of Mathematics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Manchester Metropolitan University, Dept. of Computing, Maths. and Digital Technology, Manchester M1 5GD (United Kingdom); Sharaby, Y.A., E-mail: Yasser_Sharaby@hotmail.com [Department of Physics, Faculty of Science, Suez Canal University, Suez (Egypt); Ali, M.F.M., E-mail: dr.mona.fathy@hotmail.com [Department of Mathematics: Faculty of Science, Ain Shams University, Cairo (Egypt); Joshi, A., E-mail: ajoshi@eiu.edu [Department of Physics, Eastern Illinois University, Charleston, IL 61920 (United States)

    2012-10-15

    The steady state behavior of optical bistable system in a ring cavity with transverse field variations and inhomogeneousely broadened two-level atoms is investigated outside the rotating wave approximation (RWA). Analytical and numerical investigation is presented for different cases of transverse field variations with Lorentzian or Gaussian line widths. When both (transverse and inhomogeneous) features taken into account, the first harmonic output field component outside the RWA exhibits a one-way switching down processes (butterfly OB) or reversed (clockwise) OB behavior, depending on the atomic linewidth shape.

  15. Optical bistabilities of higher harmonics: Inhomogeneous and transverse effects

    International Nuclear Information System (INIS)

    Hassan, S.S.; Sharaby, Y.A.; Ali, M.F.M.; Joshi, A.

    2012-01-01

    The steady state behavior of optical bistable system in a ring cavity with transverse field variations and inhomogeneousely broadened two-level atoms is investigated outside the rotating wave approximation (RWA). Analytical and numerical investigation is presented for different cases of transverse field variations with Lorentzian or Gaussian line widths. When both (transverse and inhomogeneous) features taken into account, the first harmonic output field component outside the RWA exhibits a one-way switching down processes (butterfly OB) or reversed (clockwise) OB behavior, depending on the atomic linewidth shape.

  16. Pump-Power-Driven Mode Switching in a Microcavity Device and Its Relation to Bose-Einstein Condensation

    Directory of Open Access Journals (Sweden)

    H. A. M. Leymann

    2017-06-01

    Full Text Available We investigate the switching of the coherent emission mode of a bimodal microcavity device, occurring when the pump power is varied. We compare experimental data to theoretical results and identify the underlying mechanism based on the competition between the effective gain, on the one hand, and the intermode kinetics, on the other. When the pumping is ramped up, above a threshold, the mode with the largest effective gain starts to emit coherent light, corresponding to lasing. In contrast, in the limit of strong pumping, it is the intermode kinetics that determines which mode acquires a large occupation and shows coherent emission. We point out that this latter mechanism is akin to the equilibrium Bose-Einstein condensation of massive bosons. Thus, the mode switching in our microcavity device can be viewed as a minimal instance of Bose-Einstein condensation of photons. Moreover, we show that the switching from one cavity mode to the other always occurs via an intermediate phase where both modes are emitting coherent light and that it is associated with both superthermal intensity fluctuations and strong anticorrelations between both modes.

  17. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact.

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-12

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  18. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-01

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from ‘electrochemical’ to ‘mechanical’, which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  19. Controlling the optical bistability and transmission coefficient in a four-level atomic medium

    International Nuclear Information System (INIS)

    Asadpour, Seyyed Hossein; Eslami-Majd, Abdullah

    2012-01-01

    A novel four level atomic configuration is proposed for controlling the optical bistability and transmission coefficient with application on all-optical switching. Two circularly polarized components from a weak linearly-polarized probe beam are interacted separately by two transitions of this medium. A coherent coupling field has derived another atomic transition. It is demonstrated that the transmission coefficient of two orthogonally polarized beams at different frequencies can be achieved by adjusting the magnitude of the external magnetic field. It is found that the threshold of the optical bistability can be controlled by magnitude of the external magnetic field. Also, it is shown that optical bistability can be converted to optical multistability by switching the two orthogonally polarized beams. - Highlights: ► An inverted Y-type four level atomic system is proposed. ► Transmission coefficient can be controlled by a novel interesting parameter. ► Optical bistability and multistability can be achieved via external magnetic field. ► It is shown that our proposed model is suitable for all optical switching application.

  20. A broadband electromagnetic energy harvester with a coupled bistable structure

    International Nuclear Information System (INIS)

    Zhu, D; Beeby, S P

    2013-01-01

    This paper investigates a broadband electromagnetic energy harvester with a coupled bistable structure. Both analytical model and experimental results showed that the coupled bistable structure requires lower excitation force to trigger bistable operation than conventional bistable structures. A compact electromagnetic vibration energy harvester with a coupled bistable structure was implemented and tested. It was excited under white noise vibrations. Experimental results showed that the coupled bistable energy harvester can achieve bistable operation with lower excitation amplitude and generate more output power than both conventional bistable and linear energy harvesters under white noise excitation

  1. Bistable diverter valve in microfluidics

    Czech Academy of Sciences Publication Activity Database

    Tesař, Václav; Bandulasena, H.C.H.

    2011-01-01

    Roč. 50, č. 5 (2011), s. 1225-1233 ISSN 0723-4864 R&D Projects: GA ČR GA101/07/1499; GA AV ČR IAA200760705 Institutional research plan: CEZ:AV0Z20760514 Keywords : fluidics * bistable diverter valves * pressure-driven microfluidics Subject RIV: BK - Fluid Dynamics Impact factor: 1.735, year: 2011 http://www.springerlink.com/content/x4907p1908151522/

  2. Brain networks underlying bistable perception.

    Science.gov (United States)

    Baker, Daniel H; Karapanagiotidis, Theodoros; Coggan, David D; Wailes-Newson, Kirstie; Smallwood, Jonathan

    2015-10-01

    Bistable stimuli, such as the Necker Cube, demonstrate that experience can change in the absence of changes in the environment. Such phenomena can be used to assess stimulus-independent aspects of conscious experience. The current study used resting state functional magnetic resonance imaging (rs-fMRI) to index stimulus-independent changes in neural activity to understand the neural architecture that determines dominance durations during bistable perception (using binocular rivalry and Necker cube stimuli). Anterior regions of the Superior Parietal Lobule (SPL) exhibited robust connectivity with regions of primary sensorimotor cortex. The strength of this region's connectivity with the striatum predicted shorter dominance durations during binocular rivalry, whereas its connectivity to pre-motor cortex predicted longer dominance durations for the Necker Cube. Posterior regions of the SPL, on the other hand, were coupled to associative cortex in the temporal and frontal lobes. The posterior SPL's connectivity to the temporal lobe predicted longer dominance during binocular rivalry. In conjunction with prior work, these data suggest that the anterior SPL contributes to perceptual rivalry through the inhibition of incongruent bottom up information, whereas the posterior SPL influences rivalry by supporting the current interpretation of a bistable stimulus. Our data suggests that the functional connectivity of the SPL with regions of sensory, motor, and associative cortex allows it to regulate the interpretation of the environment that forms the focus of conscious attention at a specific moment in time. Copyright © 2015. Published by Elsevier Inc.

  3. All-optical bistable logic control based on coupled Tamm plasmons.

    Science.gov (United States)

    Zhang, Wei Li; Jiang, Yao; Zhu, Ye Yu; Wang, Fen; Rao, Yun Jiang

    2013-10-15

    A method for realizing low-threshold all-optical bistable logic control is proposed based on Tamm plasmons (TPs), which are formed in an asymmetric dielectric Bragg reflector (DBR)-metal-DBR (ADMD) structure with a layer of Kerr medium embedded. The ADMD structure supports two TPs due to coupling of trapped modes at each metal-DBR interface, generating two dips in the structure's reflection spectrum. Thus, control (i.e., pump) and controlled (i.e., probe) light with wavelengths close to the two dips, respectively, can be imported. It is verified theoretically that, thanks to the enhanced Kerr nonlinearity related to excitation of high-quality TP, bistable switching at very low injection intensity can be initiated by strength or direction variation of the pump. Meanwhile, the probe changes correspondingly with the pump. Thus, all-optical bistable logic operation of the probe can be controlled by the pump.

  4. Bistable enhanced total reflection in Kretschmann configuration containing a saturable gain medium.

    Science.gov (United States)

    Zhou, Haichun; Guo, Jie; Xu, Kun; Li, Zhe; Tang, Junqi; Man, Shiqing

    2018-03-05

    The reflection of a TM-polarized light beam from a Kretschmann configuration with a saturable gain medium is investigated theoretically. Here, the dielectric constant of the gain medium is described by a classical Lorentzian oscillator model. When surface plasmon polaritons are effectively excited in this structure, it is demonstrated that the curves of enhanced total reflection (ETR) show different shaped hysteresis loops associated with optical bistability owing to gain saturation effect. The effects of the angle of incidence, the thickness of metal film, and the value of small-signal gain on bistable ETR are discussed in detail in a homogeneously broadened (HB) gain medium at line center. Analogous results can also be obtained in an inhomogeneously broadened (inHB) gain medium, while the two switch thresholds and the width of optical bistability hysteresis in an inHB gain medium are significantly different from those in a HB gain medium.

  5. Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

    International Nuclear Information System (INIS)

    Zhang, Chuanyi; Zhang, Weifeng

    2015-01-01

    We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

  6. Novel piezoelectric bistable oscillator architecture for wideband vibration energy harvesting

    International Nuclear Information System (INIS)

    Liu, W Q; Badel, A; Formosa, F; Wu, Y P; Agbossou, A

    2013-01-01

    Bistable vibration energy harvesters are attracting more and more interest because of their capability to scavenge energy over a large frequency band. The bistable effect is usually based on magnetic interaction or buckled beams. This paper presents a novel architecture based on amplified piezoelectric structures. This buckled spring–mass architecture allows the energy of the dynamic mass to be converted into electrical energy in the piezoelectric materials as efficiently as possible. Modeling and design are performed and a normalized expression of the harvester behavior is given. Chirp and band-limited noise excitations are used to evaluate the proposed harvester’s performances. Simulation and experimental results are in good agreement. A method of using a spectrum plot for investigating the interwell motion is presented. The effect of the electric load impedance matching strategy is also studied. Results and comparisons with the literature show that the proposed device combines a large bandwidth and a high power density. (paper)

  7. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  8. Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

    Science.gov (United States)

    Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

    2018-06-01

    We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

  9. Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

    International Nuclear Information System (INIS)

    Sokolov, A; Sabirianov, I; Sabirianov, R; Doudin, B

    2009-01-01

    Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

  10. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices

    OpenAIRE

    Kim, Min Su; Bos, Philip J.; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-01-01

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but...

  11. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  12. Bistability and Biofilm Formation in Bacillus subtilis

    Science.gov (United States)

    Chai, Yunrong; Chu, Frances; Kolter, Roberto; Losick, Richard

    2008-01-01

    Summary Biofilms of Bacillus subtilis consist of long chains of cells that are held together in bundles by an extracellular matrix of exopolysaccharide and the protein TasA. The exopolysaccharide is produced by enzymes encoded by the epsA-O operon and the gene encoding TasA is located in the yqxM-sipW-tasA operon. Both operons are under the control of the repressor SinR. Derepression is mediated by the antirepressor SinI, which binds to SinR with a 1:1 stoichiometry. Paradoxically, in medium promoting derepression of the matrix operons, the overall concentration of SinR in the culture greatly exceeded that of SinI. We show that under biofilm-promoting conditions sinI, which is under the control of the response regulator Spo0A, was expressed only in a small subpopulation of cells, whereas sinR was expressed in almost all cells. Activation of Spo0A is known to be subject to a bistable switch, and we infer that SinI reaches levels sufficient to trigger matrix production only in the subpopulation of cells in which Spo0A is active. Additionally, evidence suggests that sinI is expressed at intermediate, but not low or high, levels of Spo0A activity, which may explain why certain nutritional conditions are more effective in promoting biofilm formation than others. PMID:18047568

  13. Revisiting the Lissajous figure as a tool to study bistable perception.

    Science.gov (United States)

    Weilnhammer, V A; Ludwig, K; Sterzer, P; Hesselmann, G

    2014-05-01

    During bistable vision perception spontaneously "switches" between two mutually exclusive percepts despite constant sensory input. The endogenous nature of these perceptual transitions has motivated extensive research aimed at the underlying mechanisms, since spontaneous perceptual transitions of bistable stimuli should in principle allow for a dissociation of processes related to sensory stimulation from those related to conscious perception. However, transitions from one conscious percept to another are often not instantaneous, and participants usually report a considerable amount of mixed or unclear percepts. This feature of bistable vision makes it difficult to isolate transition-related visual processes. Here, we revisited an ambiguous depth-from-motion stimulus which was first introduced to experimental psychology more than 80 years ago. This rotating Lissajous figure might prove useful in complementing other bistable stimuli, since its perceptual transitions only occur at critical stimulus configurations and are virtually instantaneous, thus facilitating the construction of a perceptually equivalent replay condition. We found that three parameters of the Lissajous figure - complexity, line width, and rotational speed - differentially modulated its perceptual dominance durations and transition probabilities, thus providing experimenters with a versatile tool to study the perceptual dynamics of bistable vision. Copyright © 2014 Elsevier B.V. All rights reserved.

  14. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    International Nuclear Information System (INIS)

    Kim, E J; Kim, K A; Yoon, S M

    2016-01-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses. (paper)

  15. Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

    Science.gov (United States)

    Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

    2013-02-01

    Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

  16. Multiobjective optimal placement of switches and protective devices in electric power distribution systems using ant colony optimization

    Energy Technology Data Exchange (ETDEWEB)

    Tippachon, Wiwat; Rerkpreedapong, Dulpichet [Department of Electrical Engineering, Kasetsart University, 50 Phaholyothin Rd., Ladyao, Jatujak, Bangkok 10900 (Thailand)

    2009-07-15

    This paper presents a multiobjective optimization methodology to optimally place switches and protective devices in electric power distribution networks. Identifying the type and location of them is a combinatorial optimization problem described by a nonlinear and nondifferential function. The multiobjective ant colony optimization (MACO) has been applied to this problem to minimize the total cost while simultaneously minimize two distribution network reliability indices including system average interruption frequency index (SAIFI) and system interruption duration index (SAIDI). Actual distribution feeders are used in the tests, and test results have shown that the algorithm can determine the set of optimal nondominated solutions. It allows the utility to obtain the optimal type and location of devices to achieve the best system reliability with the lowest cost. (author)

  17. Diversity and functional properties of bistable pigments.

    Science.gov (United States)

    Tsukamoto, Hisao; Terakita, Akihisa

    2010-11-01

    Rhodopsin and related opsin-based pigments, which are photosensitive membrane proteins, have been extensively studied using a wide variety of techniques, with rhodopsin being the most understood G protein-coupled receptor (GPCR). Animals use various opsin-based pigments for vision and a wide variety of non-visual functions. Many functionally varied pigments are roughly divided into two kinds, based on their photoreaction: bistable and monostable pigments. Bistable pigments are thermally stable before and after photo-activation, but monostable pigments are stable only before activation. Here, we review the diversity of bistable pigments and their molecular characteristics. We also discuss the mechanisms underlying different molecular characteristics of bistable and monostable pigments. In addition, the potential of bistable pigments as a GPCR model is proposed.

  18. Low Capacitive Inductors for Fast Switching Devices in Active Power Factor Correction Applications

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work is to inves......This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work...... is to investigate different winding approaches and identify suitable solutions for high switching frequency/high speed transition PFC designs. A low parasitic capacitance PCB based inductor design is proposed to address the challenges imposed by high switching frequency PFC Boost converters....

  19. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  20. The switching characteristics of free layer of patterned magnetic tunnel junction device

    International Nuclear Information System (INIS)

    Chen, C.C.; Wang, Y.R.; Kuo, C.Y.; Wu, J.C.; Horng, Lance; Wu, Teho; Yoshimura, S.; Tsunoda, M.; Takahashi, M.

    2006-01-01

    The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process

  1. Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity.

    Science.gov (United States)

    Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun

    2017-10-16

    We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

  2. Conductive transition metal oxide nanostructured electrochromic material and optical switching devices constructed thereof

    Science.gov (United States)

    Mattox, Tracy M.; Koo, Bonil; Garcia, Guillermo; Milliron, Delia J.; Trizio, Luca De; Dahlman, Clayton

    2017-10-10

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant, a solid state electrolyte, and a counter electrode. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) spectrum and visible spectrum radiation as a function of an applied voltage to the device.

  3. Measuring devices for the modular switch system; Messgeraete fuer den Schaltschrank

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Rudolf [Janitza Electronics GmbH, Lahnau (Germany). Sales und Marketing

    2008-10-15

    The advantages of digital universal measuring instruments are: lower device cost for more information and functionality. Furtheron digital measuring technology is more exactly during service life. Cost advantages result due to low installation cost and reduced installation of wires and cables. So universal devices replace all analogue systems and offer further functions. (orig./GL)

  4. Noise tolerance in wavelength-selective switching of optical differential quadrature-phase-shift-keying pulse train by collinear acousto-optic devices.

    Science.gov (United States)

    Goto, Nobuo; Miyazaki, Yasumitsu

    2014-06-01

    Optical switching of high-bit-rate quadrature-phase-shift-keying (QPSK) pulse trains using collinear acousto-optic (AO) devices is theoretically discussed. Since the collinear AO devices have wavelength selectivity, the switched optical pulse trains suffer from distortion when the bandwidth of the pulse train is comparable to the pass bandwidth of the AO device. As the AO device, a sidelobe-suppressed device with a tapered surface-acoustic-wave (SAW) waveguide and a Butterworth-type filter device with a lossy SAW directional coupler are considered. Phase distortion of optical pulse trains at 40 to 100  Gsymbols/s in QPSK format is numerically analyzed. Bit-error-rate performance with additive Gaussian noise is also evaluated by the Monte Carlo method.

  5. Bistable Si dopants in the GaAs (1 1 0) surface

    International Nuclear Information System (INIS)

    Smakman, E P; Koenraad, P M

    2015-01-01

    In this review, recent work is discussed on bistable Si dopants in the GaAs (1 1 0) surface, studied by scanning tunneling microscopy (STM). The bistability arises because the dopant atom can switch between a positive and a negative charge state, which are associated with two different lattice configurations. Manipulation of the Si atom charge configuration is achieved by tuning the local band bending with the STM tip. Furthermore, illuminating the sample with a laser also influences the charge state, allowing the operation of the dopant atom as an optical switch. The switching dynamics without illumination is investigated in detail as a function of temperature, lateral tip position, and applied tunneling conditions. A physical model is presented that independently describes the thermal and quantum tunneling contributions to the switching frequency and charge state occupation of a single Si atom. The basic functionality of a memory cell is demonstrated employing a single bistable Si dopant as the active element, using the STM tip as a gate to write and read the information. (topical review)

  6. Revisiting bistability in the lysis/lysogeny circuit of bacteriophage lambda.

    Directory of Open Access Journals (Sweden)

    Michael Bednarz

    Full Text Available The lysis/lysogeny switch of bacteriophage lambda serves as a paradigm for binary cell fate decision, long-term maintenance of cellular state and stimulus-triggered switching between states. In the literature, the system is often referred to as "bistable." However, it remains unclear whether this term provides an accurate description or is instead a misnomer. Here we address this question directly. We first quantify transcriptional regulation governing lysogenic maintenance using a single-cell fluorescence reporter. We then use the single-cell data to derive a stochastic theoretical model for the underlying regulatory network. We use the model to predict the steady states of the system and then validate these predictions experimentally. Specifically, a regime of bistability, and the resulting hysteretic behavior, are observed. Beyond the steady states, the theoretical model successfully predicts the kinetics of switching from lysogeny to lysis. Our results show how the physics-inspired concept of bistability can be reliably used to describe cellular phenotype, and how an experimentally-calibrated theoretical model can have accurate predictive power for cell-state switching.

  7. All-thin-film PZT/FeGa Multiferroic Cantilevers and Their Applications in Switching Devices and Parametric Amplification

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Chris; Lofland, Samuel; Takeuchi, Ichiro

    2014-03-01

    We are investigating the characteristics of microfabricated PZT/FeGa multiferroic cantilevers. The cantilevers can be driven by AC or DC magnetic and electric field, and the device response can be read off as a piezo-induced voltage. We can use the multiple input parameters to operate the devices in a variety of manners for different applications. They include electromagnetic energy harvesting, pulse triggered nonlinear memory devices, and parametrically amplified ME sensors. Due to the competition of anisotropy and Zeeman energies, the mechanical resonant frequency of the cantilevers was found to follow a hysteresis behavior with DC bias magnetic field applied in the cantilever easy axis. We can also control and tune the occurrence of nonlinear bifurcation in the frequency spectrum. The resulting hysteresis in the frequency spectrum can be used to make switching devices, where the input can be DC electric and magnetic fields, as well as pulses of AC fields. We have also demonstrated parametric pumping of the response from an AC magnetic field using frequency-doubled AC electric field. The enhanced equivalent ME coefficient is as high as 10 million V/(cm*Oe), when the pumping voltage is very close to a threshold voltage. The quality factor also increases from 2000 to 80000 with pumping.

  8. A broadband electromagnetic energy harvester with a coupled bistable structure

    OpenAIRE

    Zhu, Dibin; Beeby, Steve

    2013-01-01

    This paper investigates a broadband electromagnetic energy harvester with a coupled bistable structure. Both analytical model and experimental results showed that the coupled bistable structure requires lower excitation force to trigger bistable operation than conventional bistable structures. A compact electromagnetic vibration energy harvester with a coupled bistable structure was implemented and tested. It was excited under white noise vibrations. Experimental results showed that the coupl...

  9. The interplay of multiple feedback loops with post-translational kinetics results in bistability of mycobacterial stress response

    International Nuclear Information System (INIS)

    Tiwari, Abhinav; Igoshin, Oleg A; Balázsi, Gábor; Gennaro, Maria Laura

    2010-01-01

    Bacterial persistence is the phenomenon in which a genetically identical fraction of a bacterial population can survive exposure to stress by reduction or cessation of growth. Persistence in mycobacteria has been recently linked to a stress-response network, consisting of the MprA/MprB two-component system and alternative sigma factor σ E . This network contains multiple positive transcriptional feedback loops which may give rise to bistability, making it a good candidate for controlling the mycobacterial persistence switch. To analyze the possibility of bistability, we develop a method that involves decoupling of the network into transcriptional and post-translational interaction modules. As a result we reduce the dimensionality of the dynamical system and independently analyze input–output relations in the two modules to formulate a necessary condition for bistability in terms of their logarithmic gains. We show that neither the positive autoregulation in the MprA/MprB network nor the σ E -mediated transcriptional feedback is sufficient to induce bistability in a biochemically realistic parameter range. Nonetheless, inclusion of the post-translational regulation of σ E by RseA increases the effective cooperativity of the system, resulting in bistability that is robust to parameter variation. We predict that overexpression or deletion of RseA, the key element controlling the ultrasensitive response, can eliminate bistability

  10. Power requirements reducing of FBG based all-optical switching

    Science.gov (United States)

    Scholtz, Ľubomír.; Solanská, Michaela; Ladányi, Libor; Müllerová, Jarmila

    2017-12-01

    Although Fiber Bragg gratings (FBGs) are well known devices, their using as all-optical switching elements has been still examined. Current research is focused on optimization of their properties for their using in future all-optical networks. The main problem are high switching intensities needed for achieving the changes of the transmission state. Over several years switching intensities have been reduced from hundreds of GW/cm2 to tens of MW/cm2 by selecting appropriate gratings and signal parameters or using suitable materials. Two principal nonlinear effects with similar power requirements can result in the bistable transmission/reflection of an input optical pulse. In the self-phase modulation (SPM) regime switching is achieved by the intense probe pulse itself. Using cross-phase modulation (XPM) a strong pump alters the FBG refractive index experienced by a weak probe pulse. As a result of this the detuning of the probe pulse from the center of the photonic band gap occurs. Using of XPM the effect of modulation instability is reduced. Modulation instability which is the main SPM degradation mechanism. We focused on nonlinear FBGs based on chalcogenide glasses which are very often used in various applications. Thanks to high nonlinear parameters chalcogenide glasses are suitable candidates for reducing switching intensities of nonlinear FBGs.

  11. Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

    International Nuclear Information System (INIS)

    Bokhan, P. A.; Gugin, P. P.; Lavrukhin, M. A.; Zakrevsky, Dm. E.

    2015-01-01

    The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm 2 overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10 12  A/s

  12. Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

    Science.gov (United States)

    Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

    2018-06-01

    An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

  13. In search of a quasi-zero dimensional quantum spin-switching device

    International Nuclear Information System (INIS)

    Hancock, Y.

    2002-01-01

    Full text: In this paper, we propose a theoretical mechanism and potential application for quantum spin switching systems of the generic NMMMMMN type. In this case, N and M respectively refer to non-magnetic and magnetic atoms, of a 7-site finite, inhomogeneous system. We base our understanding on recent investigations into the magnetic induction mechanism on the N-type sites. Such investigations were performed within the context of the Hubbard Model, using both Hartree-Fock and Exact Diagonalization studies. In this work, we have used exact diagonalization studies to probe the spin-spin (2-site) correlation results of these systems, as a function of the model parameters and electron filling. Such calculations were performed within the context of the Hubbard and the Extended Hubbard Models. We have used our results as a means of investigating the proposed quantum spin-switching mechanism within the context of the full many-body problem. In addition to investigating this mechanism, we aim to propose a more realistic theoretical context in which the potential of these systems can be further explored

  14. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  15. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Directory of Open Access Journals (Sweden)

    Peng Xia

    2017-11-01

    Full Text Available A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF state to low resistance (ON state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  16. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Science.gov (United States)

    Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

    2017-11-01

    A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  17. Transcriptional delay stabilizes bistable gene networks.

    Science.gov (United States)

    Gupta, Chinmaya; López, José Manuel; Ott, William; Josić, Krešimir; Bennett, Matthew R

    2013-08-02

    Transcriptional delay can significantly impact the dynamics of gene networks. Here we examine how such delay affects bistable systems. We investigate several stochastic models of bistable gene networks and find that increasing delay dramatically increases the mean residence times near stable states. To explain this, we introduce a non-Markovian, analytically tractable reduced model. The model shows that stabilization is the consequence of an increased number of failed transitions between stable states. Each of the bistable systems that we simulate behaves in this manner.

  18. Lake Restoration in Terms of Ecological Resilience: a Numerical Study of Biomanipulations under Bistable Conditions

    Directory of Open Access Journals (Sweden)

    Takashi Amemiya

    2005-12-01

    Full Text Available An abstract version of the comprehensive aquatic simulation model (CASM is found to exhibit bistability under intermediate loading of nutrient input, supporting the alternative-stable-states theory and field observations for shallow lakes. Our simulations of biomanipulations under the bistable conditions reveal that a reduction in the abundance of zooplanktivorous fish cannot switch the system from a turbid to a clear state. Rather, a direct reduction of phytoplankton and detritus was found to be most effective to make this switch in the present model. These results imply that multiple manipulations may be effective for practical restorations of lakes. We discuss the present results of biomanipulations in terms of ecological resilience in multivariable systems or natural systems.

  19. Hybrid Lead Halide Perovskites for Ultrasensitive Photoactive Switching in Terahertz Metamaterial Devices.

    Science.gov (United States)

    Manjappa, Manukumara; Srivastava, Yogesh Kumar; Solanki, Ankur; Kumar, Abhishek; Sum, Tze Chien; Singh, Ranjan

    2017-08-01

    The recent meteoric rise in the field of photovoltaics with the discovery of highly efficient solar-cell devices is inspired by solution-processed organic-inorganic lead halide perovskites that exhibit unprecedented light-to-electricity conversion efficiencies. The stunning performance of perovskites is attributed to their strong photoresponsive properties that are thoroughly utilized in designing excellent perovskite solar cells, light-emitting diodes, infrared lasers, and ultrafast photodetectors. However, optoelectronic application of halide perovskites in realizing highly efficient subwavelength photonic devices has remained a challenge. Here, the remarkable photoconductivity of organic-inorganic lead halide perovskites is exploited to demonstrate a hybrid perovskite-metamaterial device that shows extremely low power photoswitching of the metamaterial resonances in the terahertz part of the electromagnetic spectrum. Furthermore, a signature of a coupled phonon-metamaterial resonance is observed at higher pump powers, where the Fano resonance amplitude is extremely weak. In addition, a low threshold, dynamic control of the highly confined electric field intensity is also observed in the system, which could tremendously benefit the new generation of subwavelength photonic devices as active sensors, low threshold optically controlled lasers, and active nonlinear devices with enhanced functionalities in the infrared, optical, and the terahertz parts of the electromagnetic spectrum. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

    Science.gov (United States)

    Pan, Chengbin; Miranda, Enrique; Villena, Marco A.; Xiao, Na; Jing, Xu; Xie, Xiaoming; Wu, Tianru; Hui, Fei; Shi, Yuanyuan; Lanza, Mario

    2017-06-01

    Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices in the market. Moreover, analytical tools capable of describing and predicting the behavior of the devices (which are necessary before facing mass production) are very scarce. In this work we synthesize a resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures, and we develop a compact model that accurately describes its functioning. The devices were fabricated using scalable methods (i.e. CVD for material growth and shadow mask for electrode patterning), and they show reproducible resistive switching (RS). The measured characteristics during the forming, set and reset processes were fitted using the model developed. The model is based on the nonlinear Landauer approach for mesoscopic conductors, in this case atomic-sized filaments formed within the 2D materials system. Besides providing excellent overall fitting results (which have been corroborated in log-log, log-linear and linear-linear plots), the model is able to explain the dispersion of the data obtained from cycle-to-cycle in terms of the particular features of the filamentary paths, mainly their confinement potential barrier height.

  1. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    Science.gov (United States)

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-02-18

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  2. Flexoelectric effect in an in-plane switching (IPS) liquid crystal cell for low-power consumption display devices.

    Science.gov (United States)

    Kim, Min Su; Bos, Philip J; Kim, Dong-Woo; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2016-10-12

    Technology of displaying static images in portable displays, advertising panels and price tags pursues significant reduction in power consumption and in product cost. Driving at a low-frequency electric field in fringe-field switching (FFS) mode can be one of the efficient ways to save powers of the recent portable devices, but a serious drop of image-quality, so-called image-flickering, has been found in terms of the coupling of elastic deformation to not only quadratic dielectric effect but linear flexoelectric effect. Despite of the urgent requirement of solving the issue, understanding of such a phenomenon is yet vague. Here, we thoroughly analyze and firstly report the flexoelectric effect in in-plane switching (IPS) liquid crystal cell. The effect takes place on the area above electrodes due to splay and bend deformations of nematic liquid crystal along oblique electric fields, so that the obvious spatial shift of the optical transmittance is experimentally observed and is clearly demonstrated based on the relation between direction of flexoelectric polarization and electric field polarity. In addition, we report that the IPS mode has inherent characteristics to solve the image-flickering issue in the low-power consumption display in terms of the physical property of liquid crystal material and the electrode structure.

  3. On-Line Junction Temperature Monitoring of Switching Devices with Dynamic Compact Thermal Models Extracted with Model Order Reduction

    Directory of Open Access Journals (Sweden)

    Fabio Di Napoli

    2017-02-01

    Full Text Available Residual lifetime estimation has gained a key point among the techniques that improve the reliability and the efficiency of power converters. The main cause of failures are the junction temperature cycles exhibited by switching devices during their normal operation; therefore, reliable power converter lifetime estimation requires the knowledge of the junction temperature time profile. Since on-line dynamic temperature measurements are extremely difficult, in this work an innovative real-time monitoring strategy is proposed, which is capable of estimating the junction temperature profile from the measurement of the dissipated powers through an accurate and compact thermal model of the whole power module. The equations of this model can be easily implemented inside a FPGA, exploiting the control architecture already present in modern power converters. Experimental results on an IGBT power module demonstrate the reliability of the proposed method.

  4. Nonvolatile conductive filaments resistive switching behaviors in Ag/GaO{sub x} /Nb:SrTiO{sub 3}/Ag structure

    Energy Technology Data Exchange (ETDEWEB)

    Li, P.G. [Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communication, Beijing (China); Zhejiang Sci-Tech University, Center for Optoelectronics Materials and Devices, Hangzhou (China); Zhi, Y.S.; An, Y.H.; Guo, D.Y.; Tang, W.H.; Xiao, J.H. [Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communication, Beijing (China); Wang, P.C. [Zhejiang Sci-Tech University, Center for Optoelectronics Materials and Devices, Hangzhou (China); Sun, Z.B. [Chinese Academy of Sciences, Key Laboratory of Electronics and Information Technology for Space Systems, National Space Science Center, Beijing (China); Li, L.H. [State University of New York at Potsdam, Department of Physics, Potsdam, NY (United States)

    2016-07-15

    Ag/GaO{sub x} /NSTO/Ag structures were fabricated, and the electrical properties measurement results show that the device behaviors a unipolar resistance switching characteristic with bi-stable resistance ratio of three orders. In the positive voltage region, the dominant conducting mechanism of high resistance state obeys Poole-Frenkel emission rules, while in the negative region, that obeys space-charge-limited current mechanism. Both the I-V curves of ON and OFF states and temperature-dependent variation resistances indicate that the unipolar resistance switching behavior can be explained by the formation/rupture of conductive filaments, which composed of oxygen vacancies. The stable switching results demonstrated that the structure can be applied in resistance random access memory devices. (orig.)

  5. Bistability By Self-Reflection In A Saturable Absorber

    Science.gov (United States)

    Roso-Franco, Luis

    1987-01-01

    Propagation of laser light through a saturable absorber is theoretically studied. Computed steady state solutions of the Maxwell equations describing the unidimensional propagation of a plane monochromatic wave without introducing the slowly-varying envelope approximation are presented showing how saturation effects can influence the absorption of the field. At a certain range of refractive index and extintion coefficients, computed solutions display a very susprising behaviour, and a self-reflected wave appears inside the absorber. This can be useful for a new kind of biestable device, similar to a standard bistable cavity but with the back mirror self-induced by the light.

  6. Evolution of the bi-stable wake of a square-back automotive shape

    Science.gov (United States)

    Pavia, Giancarlo; Passmore, Martin; Sardu, Costantino

    2018-01-01

    Square-back shapes are popular in the automotive market for their high level of practicality. These geometries, however, are usually characterised by high drag and their wake dynamics present aspects, such as the coexistence of a long-time bi-stable behaviour and short-time global fluctuating modes that are not fully understood. In the present paper, the unsteady behaviour of the wake of a generic square-back car geometry is characterised with an emphasis on identifying the causal relationship between the different dynamic modes in the wake. The study is experimental, consisting of balance, pressure, and stereoscopic PIV measurements. Applying wavelet and cross-wavelet transforms to the balance data, a quasi-steady correlation is demonstrated between the forces and bi-stable modes. This is investigated by applying proper orthogonal decomposition to the pressure and velocity data sets and a new structure is proposed for each bi-stable state, consisting of a hairpin vortex that originates from one of the two model's vertical trailing edges and bends towards the opposite side as it merges into a single streamwise vortex downstream. The wake pumping motion is also identified and for the first time linked with the motion of the bi-stable vortical structure in the streamwise direction, resulting in out-of-phase pressure variations between the two vertical halves of the model base. A phase-averaged low-order model is also proposed that provides a comprehensive description of the mechanisms of the switch between the bi-stable states. It is demonstrated that, during the switch, the wake becomes laterally symmetric and, at this point, the level of interaction between the recirculating structures and the base reaches a minimum, yielding, for this geometry, a 7% reduction of the base drag compared to the time-averaged result.

  7. Maximizing direct current power delivery from bistable vibration energy harvesting beams subjected to realistic base excitations

    Science.gov (United States)

    Dai, Quanqi; Harne, Ryan L.

    2017-04-01

    Effective development of vibration energy harvesters is required to convert ambient kinetic energy into useful electrical energy as power supply for sensors, for example in structural health monitoring applications. Energy harvesting structures exhibiting bistable nonlinearities have previously been shown to generate large alternating current (AC) power when excited so as to undergo snap-through responses between stable equilibria. Yet, most microelectronics in sensors require rectified voltages and hence direct current (DC) power. While researchers have studied DC power generation from bistable energy harvesters subjected to harmonic excitations, there remain important questions as to the promise of such harvester platforms when the excitations are more realistic and include both harmonic and random components. To close this knowledge gap, this research computationally and experimentally studies the DC power delivery from bistable energy harvesters subjected to such realistic excitation combinations as those found in practice. Based on the results, it is found that the ability for bistable energy harvesters to generate peak DC power is significantly reduced by introducing sufficient amount of stochastic excitations into an otherwise harmonic input. On the other hand, the elimination of a low amplitude, coexistent response regime by way of the additive noise promotes power delivery if the device was not originally excited to snap-through. The outcomes of this research indicate the necessity for comprehensive studies about the sensitivities of DC power generation from bistable energy harvester to practical excitation scenarios prior to their optimal deployment in applications.

  8. Possible hysteresis loops of resonatorless optical bistability

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong.

    1990-05-01

    We qualitatively show that hysteresis loops of intrinsic optical bistability phenomena without any additional feedback may be of various shapes including those of a butterfly and a three-winged bow. (author). 15 refs, 4 figs

  9. Space charge effects and electronic bistability

    International Nuclear Information System (INIS)

    Ruffini, A.; Strumia, F.; Tommasi, O.

    1996-01-01

    The excitation of metastable states in an atomic beam apparatus by means of electron collision is a widespread technique. The authors have observed a large bistable behaviour in apparatus designed to provide an intense and collimated beam of metastable helium by excitation with orthogonally impinging electrons. This bistable behaviour largely affects the efficiency of the apparatus and is therefore worth of being carefully investigated. The apparatus has an electrode configuration equivalent to that of a tetrode valve with large intergrid distances. The bistability consists in a hysteresis cycle in the curve of the anode current vs. grid voltage. Experimental measurements, supported by a simple theoretical model and by numerical simulation, stress out the crucial role played by space charge effects for the onset of bistability. A comparison with previous observations of this phenomenon is given. Spontaneous current oscillations with various shapes have been recorded in one of the two curves of the hysteresis cycle

  10. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  11. Multiple Bistability in Quinonoid-Bridged Diiron(II) Complexes: Influence of Bridge Symmetry on Bistable Properties.

    Science.gov (United States)

    van der Meer, Margarethe; Rechkemmer, Yvonne; Breitgoff, Frauke D; Marx, Raphael; Neugebauer, Petr; Frank, Uta; van Slageren, Joris; Sarkar, Biprajit

    2016-11-21

    Quinonoid bridges are well-suited for generating dinuclear assemblies that might display various bistable properties. In this contribution we present two diiron(II) complexes where the iron(II) centers are either bridged by the doubly deprotonated form of a symmetrically substituted quinonoid bridge, 2,5-bis[4-(isopropyl)anilino]-1,4-benzoquinone (H 2 L2') with a [O,N,O,N] donor set, or with the doubly deprotonated form of an unsymmetrically substituted quinonoid bridge, 2-[4-(isopropyl)anilino]-5-hydroxy-1,4-benzoquinone (H 2 L5') with a [O,O,O,N] donor set. Both complexes display temperature-induced spin crossover (SCO). The nature of the SCO is strongly dependent on the bridging ligand, with only the complex with the [O,O,O,N] donor set displaying a prominent hysteresis loop of about 55 K. Importantly, only the latter complex also shows a pronounced light-induced spin state change. Furthermore, both complexes can be oxidized to the mixed-valent iron(II)-iron(III) form, and the nature of the bridge determines the Robin and Day classification of these forms. Both complexes have been probed by a battery of electrochemical, spectroscopic, and magnetic methods, and this combined approach is used to shed light on the electronic structures of the complexes and on bistability. The results presented here thus show the potential of using the relatively new class of unsymmetrically substituted bridging quinonoid ligands for generating intriguing bistable properties and for performing site-specific magnetic switching.

  12. Origami Mechanics: Bistability and Isometries

    Science.gov (United States)

    Adda-Bedia, Mokhtar; Lechenault, Frederic; Morphogenesis; multiscale phenomena Team

    2015-03-01

    Origami structures are usually seen as assemblies of rigid faces articulated around creases with hinge-like behaviour. Their deployment and degrees of freedom are purely kinematic, resulting only from the geometry of the crease network. However, in real folded structures, the base material can deform outside the creases. In such situations, face bending competes with crease actuation in a morphogenetic way. In order to rationalise this interplay, we investigate the mechanical behaviour of an infinite sheet on which one or more straight creases meet at a single vertex. We find that these structures generically exhibit bistability, in the sense that they can snap through from one metastable configuration to another. Furthermore, we uncover a new class of isometry of the plane, which corresponds to metastable states of a creased sheet for which the hoop stress vanishes, an instability mechanism that is also responsible for the wrinkling of thin plates.

  13. Dynamic and energetic characteristics of a bistable piezoelectric vibration energy harvester with an elastic magnifier

    Science.gov (United States)

    Wang, Guangqing; Liao, Wei-Hsin; Yang, Binqiang; Wang, Xuebao; Xu, Wentan; Li, Xiuling

    2018-05-01

    Bistable piezoelectric energy harvesters are being increasingly seen as an alternative to batteries in low-power devices. However, their energy harvesting characteristics are limited. To enhance these, we use a configuration including an elastic magnifier to amplify base excitation and provide sufficient kinetic energy to overcome potential well barriers, thus leading to large-amplitude bistable motion. We derive the distributed parameter mathematical model of this configuration by using Hamilton's principle. We then investigate the nonlinear dynamic behaviors and energetic characteristics and analyze the bifurcation for the equilibrium solution of the model. The simulations and experiments show high electromechanical responses and energy generation characteristics of the proposed system over a broad frequency band. The results suggest that, compared with a typical bistable piezoelectric energy harvester, the proposed energy harvester system with an elastic magnifier can provide higher output over a broader frequency band at lower excitation levels by adjusting the system's mass and stiffness ratios.

  14. Large Out-of-Plane Displacement Bistable Electromagnetic Microswitch on a Single Wafer.

    Science.gov (United States)

    Miao, Xiaodan; Dai, Xuhan; Huang, Yi; Ding, Guifu; Zhao, Xiaolin

    2016-05-05

    This paper presents a bistable microswitch fully batch-fabricated on a single glass wafer, comprising of a microactuator, a signal transformer, a microspring and a permanent magnet. The bistable mechanism of the microswitch with large displacement of 160 μm depends on the balance of the magnetic force and elastic force. Both the magnetic force and elastic force were optimized by finite-element simulation to predict the reliable of the device. The prototype was fabricated and characterized. By utilizing thick laminated photoresist sacrificial layer, the large displacement was obtained to ensure the insulation of the microswitch. The testing results show that the microswitch realized the bistable mechanism at a 3-5 V input voltage and closed in 0.96 ms, which verified the simulation.

  15. Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles

    Science.gov (United States)

    Hao, Aize; Ismail, Muhammad; He, Shuai; Huang, Wenhua; Qin, Ni; Bao, Dinghua

    2018-02-01

    The coexistence of unipolar and bipolar resistive switching (RS) behaviors of Ag-nanoparticles (Ag-NPs) doped NiFe2O4 (NFO) based memory devices was investigated. The switching voltages of required operations in the unipolar mode were smaller than those in the bipolar mode, while ON/OFF resistance levels of both modes were identical. Ag-NPs doped NFO based devices could switch between the unipolar and bipolar modes just by preferring the polarity of RESET voltage. Besides, the necessity of identical compliance current during the SET process of unipolar and bipolar modes provided an additional advantage of simplicity in device operation. Performance characteristics and cycle-to-cycle uniformity (>103 cycles) in unipolar operation were considerably better than those in bipolar mode (>102 cycles) at 25 °C. Moreover, good endurance (>600 cycles) at 200 °C was observed in unipolar mode and excellent nondestructive retention characteristics were obtained on memory cells at 125 °C and 200 °C. On the basis of temperature dependence of resistance at low resistance state, it was believed that physical origin of the RS mechanism involved the formation/rupture of the conducting paths consisting of oxygen vacancies and Ag atoms, considering Joule heating and electrochemical redox reaction effects for the unipolar and bipolar resistive switching behaviors. Our results demonstrate that 0.5% Ag-NPs doped nickel ferrites are promising resistive switching materials for resistive access memory applications.

  16. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  17. Promising and Reversible Electrolyte with Thermal Switching Behavior for Safer Electrochemical Storage Devices.

    Science.gov (United States)

    Shi, Yunhui; Zhang, Qian; Zhang, Yan; Jia, Limin; Xu, Xinhua

    2018-02-28

    A major stumbling block in large-scale adoption of high-energy-density electrochemical devices has been safety issues. Methods to control thermal runaway are limited by providing a one-time thermal protection. Herein, we developed a simple and reversible thermoresponsive electrolyte system that is efficient to shutdown the current flow according to temperature changes. The thermal management is ascribed to the thermally activated sol-gel transition of methyl cellulose solution, associated with the concentration of ions that can move between isolated chains freely or be restricted by entangled molecular chains. We studied the effect of cellulose concentration, substituent types, and operating temperature on the electrochemical performance, demonstrating an obvious capacity loss up to 90% approximately of its initial value. Moreover, this is a cost-effective approach that has the potential for use in practical electrochemical storage devices.

  18. Power grid current harmonics mitigation drawn on low voltage rated switching devices with effortless control

    Energy Technology Data Exchange (ETDEWEB)

    Marques, Hugo S.; Anunciada, Victor; Borges, Beatriz V. [Power Electronics Group, Instituto de Telecomunicacoes, Lisbon (Portugal); Instituto Superior Tecnico - Universidade Tecnica de Lisboa, Lisbon (Portugal)

    2010-01-15

    The great majority of the existing hybrid active power filter solutions is normally focused in 3{phi} systems and, in general, concentrates its domain of application in specific loads with deterministic behavior. Because common use grids do not exhibit these characteristics, it is mandatory to develop solutions for more generic scenarios, encouraging the use of less classical hybrid solutions. In fact, due to the widely use of switch mode converters in a great variety of consumer electronics, the problematic of mains current harmonic mitigation is no longer an exclusive matter of 3{phi} systems. The contribution of this paper is to present a shunt hybrid active power filter topology, initially conceived to work in 1{phi} domestic grids, able to operate the inverter at a voltage rate that can be lower than 10% of the mains voltage magnitude, even under nonspecific working conditions. In addition, the results shown in this paper demonstrate that this topology can, without lack of generality, be suitable to medium voltage (1{phi} or 3{phi}) systems. A new control approach for the proposed topology is discussed in this paper. The control method exhibits an extremely simple architecture requiring single point current sensing only, with no need for any kind of reference. Its practical implementation can be fulfilled by using very few, common use, operational amplifiers. The principle of operation, design criteria, simulation predictions and experimental results are presented and discussed. (author)

  19. Multiobjective planning of distribution networks incorporating switches and protective devices using a memetic optimization

    International Nuclear Information System (INIS)

    Pombo, A. Vieira; Murta-Pina, João; Pires, V. Fernão

    2015-01-01

    A multi-objective planning approach for the reliability of electric distribution networks using a memetic optimization is presented. In this reliability optimization, the type of the equipment (switches or reclosers) and their location are optimized. The multiple objectives considered to find the optimal values for these planning variables are the minimization of the total equipment cost and at the same time the minimization of two distribution network reliability indexes. The reliability indexes are the system average interruption frequency index (SAIFI) and system average interruption duration index (SAIDI). To solve this problem a memetic evolutionary algorithm is proposed, which combines the Non-Dominated Sorting Genetic Algorithm II (NSGA-II) with a local search algorithm. The obtained Pareto-optimal front contains solutions of different trade-offs with respect to the three objectives. A real distribution network is used to test the proposed algorithm. The obtained results show that this approach allows the utility to obtain the optimal type and location of the equipments to achieve the best reliability with the lower cost. - Highlights: • Reliability indexes SAIFI and SAIDI and Equipment Cost are optimized. • Optimization of equipment type, number and location on a MV network. • Memetic evolutionary algorithm with a local search algorithm is proposed. • Pareto optimal front solutions with respect to the three objective functions

  20. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  1. THE RATIONALE FOR THE USE OF TWO-PHASE SWITCHES FOR THREE-PHASE CONNECTIONS OF DISTRIBUTIVE DEVICE 27.5 KV

    Directory of Open Access Journals (Sweden)

    Yu. Ya. Sheika

    2008-12-01

    Full Text Available On the basis of materials of scientists of Moscow and Petersburg State Universities of C Ways and NIIEFAENERGO Ltd.» the author of this article with additions has considered a practical possibility of us bipolar switches on three-phase connections of distributive device 27,5 кV.

  2. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    Science.gov (United States)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  3. Non-symmetric bi-stable flow around the Ahmed body

    International Nuclear Information System (INIS)

    Meile, W.; Ladinek, T.; Brenn, G.; Reppenhagen, A.; Fuchs, A.

    2016-01-01

    Highlights: • The non-symmetric bi-stable flow around the Ahmed body is investigated experimentally. • Bi-stability, described for symmetric flow by Cadot and co-workers, was found in nonsymmetric flow also. • The flow field randomly switches between two states. • The flow is subject to a spanwise instability identified by Cadot and co-workers for symmetric flow. • Aerodynamic forces fluctuate strongly due to the bi-stability. - Abstract: The flow around the Ahmed body at varying Reynolds numbers under yawing conditions is investigated experimentally. The body geometry belongs to a regime subject to spanwise flow instability identified in symmetric flow by Cadot and co-workers (Grandemange et al., 2013b). Our experiments cover the two slant angles 25° and 35° and Reynolds numbers up to 2.784 × 10"6. Special emphasis lies on the aerodynamics under side wind influence. For the 35° slant angle, forces and moments change significantly with the yawing angle in the range 10° ≤ |β| ≤ 15°. The lift and the pitching moment exhibit strong fluctuations due to bi-stable flow around a critical angle β of ±12.5°, where the pitching moment changes sign. Time series of the forces and moments are studied and explained by PIV measurements in the flow field near the rear of the body.

  4. Parallel replica dynamics method for bistable stochastic reaction networks: Simulation and sensitivity analysis

    Science.gov (United States)

    Wang, Ting; Plecháč, Petr

    2017-12-01

    Stochastic reaction networks that exhibit bistable behavior are common in systems biology, materials science, and catalysis. Sampling of stationary distributions is crucial for understanding and characterizing the long-time dynamics of bistable stochastic dynamical systems. However, simulations are often hindered by the insufficient sampling of rare transitions between the two metastable regions. In this paper, we apply the parallel replica method for a continuous time Markov chain in order to improve sampling of the stationary distribution in bistable stochastic reaction networks. The proposed method uses parallel computing to accelerate the sampling of rare transitions. Furthermore, it can be combined with the path-space information bounds for parametric sensitivity analysis. With the proposed methodology, we study three bistable biological networks: the Schlögl model, the genetic switch network, and the enzymatic futile cycle network. We demonstrate the algorithmic speedup achieved in these numerical benchmarks. More significant acceleration is expected when multi-core or graphics processing unit computer architectures and programming tools such as CUDA are employed.

  5. Energy landscape and dynamics of brain activity during human bistable perception.

    Science.gov (United States)

    Watanabe, Takamitsu; Masuda, Naoki; Megumi, Fukuda; Kanai, Ryota; Rees, Geraint

    2014-08-28

    Individual differences in the structure of parietal and prefrontal cortex predict the stability of bistable visual perception. However, the mechanisms linking such individual differences in brain structures to behaviour remain elusive. Here we demonstrate a systematic relationship between the dynamics of brain activity, cortical structure and behaviour underpinning bistable perception. Using fMRI in humans, we find that the activity dynamics during bistable perception are well described as fluctuating between three spatially distributed energy minimums: visual-area-dominant, frontal-area-dominant and intermediate states. Transitions between these energy minimums predicted behaviour, with participants whose brain activity tend to reflect the visual-area-dominant state exhibiting more stable perception and those whose activity transits to frontal-area-dominant states reporting more frequent perceptual switches. Critically, these brain activity dynamics are correlated with individual differences in grey matter volume of the corresponding brain areas. Thus, individual differences in the large-scale dynamics of brain activity link focal brain structure with bistable perception.

  6. Parallel replica dynamics method for bistable stochastic reaction networks: Simulation and sensitivity analysis.

    Science.gov (United States)

    Wang, Ting; Plecháč, Petr

    2017-12-21

    Stochastic reaction networks that exhibit bistable behavior are common in systems biology, materials science, and catalysis. Sampling of stationary distributions is crucial for understanding and characterizing the long-time dynamics of bistable stochastic dynamical systems. However, simulations are often hindered by the insufficient sampling of rare transitions between the two metastable regions. In this paper, we apply the parallel replica method for a continuous time Markov chain in order to improve sampling of the stationary distribution in bistable stochastic reaction networks. The proposed method uses parallel computing to accelerate the sampling of rare transitions. Furthermore, it can be combined with the path-space information bounds for parametric sensitivity analysis. With the proposed methodology, we study three bistable biological networks: the Schlögl model, the genetic switch network, and the enzymatic futile cycle network. We demonstrate the algorithmic speedup achieved in these numerical benchmarks. More significant acceleration is expected when multi-core or graphics processing unit computer architectures and programming tools such as CUDA are employed.

  7. An analytical approach to bistable biological circuit discrimination using real algebraic geometry.

    Science.gov (United States)

    Siegal-Gaskins, Dan; Franco, Elisa; Zhou, Tiffany; Murray, Richard M

    2015-07-06

    Biomolecular circuits with two distinct and stable steady states have been identified as essential components in a wide range of biological networks, with a variety of mechanisms and topologies giving rise to their important bistable property. Understanding the differences between circuit implementations is an important question, particularly for the synthetic biologist faced with determining which bistable circuit design out of many is best for their specific application. In this work we explore the applicability of Sturm's theorem--a tool from nineteenth-century real algebraic geometry--to comparing 'functionally equivalent' bistable circuits without the need for numerical simulation. We first consider two genetic toggle variants and two different positive feedback circuits, and show how specific topological properties present in each type of circuit can serve to increase the size of the regions of parameter space in which they function as switches. We then demonstrate that a single competitive monomeric activator added to a purely monomeric (and otherwise monostable) mutual repressor circuit is sufficient for bistability. Finally, we compare our approach with the Routh-Hurwitz method and derive consistent, yet more powerful, parametric conditions. The predictive power and ease of use of Sturm's theorem demonstrated in this work suggest that algebraic geometric techniques may be underused in biomolecular circuit analysis.

  8. Synaptic Bistability Due to Nucleation and Evaporation of Receptor Clusters

    KAUST Repository

    Burlakov, V. M.

    2012-01-10

    We introduce a bistability mechanism for long-term synaptic plasticity based on switching between two metastable states that contain significantly different numbers of synaptic receptors. One state is characterized by a two-dimensional gas of mobile interacting receptors and is stabilized against clustering by a high nucleation barrier. The other state contains a receptor gas in equilibrium with a large cluster of immobile receptors, which is stabilized by the turnover rate of receptors into and out of the synapse. Transitions between the two states can be initiated by either an increase (potentiation) or a decrease (depotentiation) of the net receptor flux into the synapse. This changes the saturation level of the receptor gas and triggers nucleation or evaporation of receptor clusters. © 2012 American Physical Society.

  9. Oscillatory bistability of real-space transfer in semiconductor heterostructures

    Science.gov (United States)

    Do˙ttling, R.; Scho˙ll, E.

    1992-01-01

    Charge transport parallel to the layers of a modulation-doped GaAs/AlxGa1-xAs heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent AlxGa1-xAs layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage U0 and the load resistance RL. For large RL subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.

  10. Electrical bistability and charge-transport mechanisms in cuprous sulfide nanosphere-poly(N-vinylcarbazole) composite films

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Liu Jie; Wang Yichao; Peng Hongshang; Hou Yanbing; Wang Yongsheng

    2011-01-01

    In this study, electrically bistable devices were fabricated by incorporating cuprous sulfide (Cu 2 S) nanospheres with mean size less than 10 nm into a poly(N-vinylcarbazole) (PVK) matrix. A remarkable electrical bistability was clearly observed in the current–voltage curves of the devices due to an electric-field-induced charge transfer between the dodecanethiol-capped Cu 2 S nanospheres and PVK. The maximum ON/OFF current ratio reached up to value as large as 10 4 , which was dependent on the mass ratios of Cu 2 S nanospheres to PVK, the amplitude of the scanning voltages, and the film thickness. The charge-transport mechanisms of the electrically bistable devices were described on the basis of the experimental results using different theoretical models of organic electronics.

  11. Examination into the maximum rotational frequency for an in-plane switched active waveplate device

    International Nuclear Information System (INIS)

    Davidson, A J; Elston, S J; Raynes, E P

    2005-01-01

    An examination of an active waveplate device using a one-dimensional model, giving numerical and analytical results, is presented. The model calculates the director and twist configuration by minimizing the free energy of the system with simple homeotropic boundary conditions. The effect of varying the in-plane electric field in both magnitude and direction is examined, and it is shown that the twist through the cell is constant in time as the field is rotated. As the electric field is rotated, the director field lags behind by an angle which increases as the frequency of the electric field rotation increases. When this angle reaches approximately π/4 the director field no longer follows the electric field in a uniform way. Using mathematical analysis it is shown that the conditions on which the director profile will fail to follow the rotating electric field depend on the frequency of electric field rotation, the magnitude of the electric field, the dielectric anisotropy and the viscosity of the liquid crystal

  12. Study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities.

    Science.gov (United States)

    Shankar, Raji; Bulu, Irfan; Leijssen, Rick; Lončar, Marko

    2011-11-21

    We report the observation of optical bistability in Si-based photonic crystal cavities operating around 4.5 µm. Time domain measurements indicate that the source of this optical bistability is thermal, with a time constant on the order of 5 µs. Quality (Q) factor improvement is shown by the use of surface treatments (wet processes and annealing), resulting in a significant increase in Q-factor, which in our best devices is on the order of ~45,000 at 4.48 µm. After annealing in a N(2) environment, optical bistability is no longer seen in our cavities. © 2011 Optical Society of America

  13. Bubbling and bistability in two parameter discrete systems

    Indian Academy of Sciences (India)

    The birth of X *. · is concurrent with the ... for bistability viz. a½, and the higher order bistability points a¾, etc. are marked. The quadrilateral marked as ... The characteristics of 2 parameter 1-d maps that exhibit bubbling/bistability related to their ...

  14. Switching Vertical to Horizontal Graphene Growth Using Faraday Cage-Assisted PECVD Approach for High-Performance Transparent Heating Device.

    Science.gov (United States)

    Qi, Yue; Deng, Bing; Guo, Xiao; Chen, Shulin; Gao, Jing; Li, Tianran; Dou, Zhipeng; Ci, Haina; Sun, Jingyu; Chen, Zhaolong; Wang, Ruoyu; Cui, Lingzhi; Chen, Xudong; Chen, Ke; Wang, Huihui; Wang, Sheng; Gao, Peng; Rummeli, Mark H; Peng, Hailin; Zhang, Yanfeng; Liu, Zhongfan

    2018-02-01

    Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Bahniman, E-mail: bghosh@utexas.edu; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, Texas 78758 (United States)

    2016-07-21

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  16. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2016-01-01

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  17. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

    Science.gov (United States)

    Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

    2018-06-01

    Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

  18. Perceptual incongruence influences bistability and cortical activation.

    Directory of Open Access Journals (Sweden)

    Gijs Joost Brouwer

    Full Text Available We employed a parametric psychophysical design in combination with functional imaging to examine the influence of metric changes in perceptual incongruence on perceptual alternation rates and cortical responses. Subjects viewed a bistable stimulus defined by incongruent depth cues; bistability resulted from incongruence between binocular disparity and monocular perspective cues that specify different slants (slant rivalry. Psychophysical results revealed that perceptual alternation rates were positively correlated with the degree of perceived incongruence. Functional imaging revealed systematic increases in activity that paralleled the psychophysical results within anterior intraparietal sulcus, prior to the onset of perceptual alternations. We suggest that this cortical activity predicts the frequency of subsequent alternations, implying a putative causal role for these areas in initiating bistable perception. In contrast, areas implicated in form and depth processing (LOC and V3A were sensitive to the degree of slant, but failed to show increases in activity when these cues were in conflict.

  19. Longitudinal magnetic bistability of electroplated wires

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Garcia-Miquel, H.; Vazquez, M.; Svalov, A.V.; Vas'kovskiy, V.O.

    2002-01-01

    Fe 20 Ni 74 Co 6 and Fe 20 Ni 64 Co 16 1 μm thick magnetic tubes electroplated onto Cu 98 Be 2 conductive wire have been investigated in as-deposited state, after heat treatment under longitudinal magnetic field for 1 h at 330 deg. C, and after rf-sputtering deposition of the additional 2 μm Fe 19 Ni 81 layer. Heat treatments and an additional layer deposition modify the shape of hysteresis loops. Magnetically bistable behaviour, observed after the field annealing at a temperature of 330 deg. C, is studied as a function of the length of the samples. This is the first report by our knowledge on the bistable behaviour of the electroplated wires. The bistability of these wires is promising for applications such as tagging or pulse generator applications

  20. Emergence of switch-like behavior in a large family of simple biochemical networks.

    Directory of Open Access Journals (Sweden)

    Dan Siegal-Gaskins

    2011-05-01

    Full Text Available Bistability plays a central role in the gene regulatory networks (GRNs controlling many essential biological functions, including cellular differentiation and cell cycle control. However, establishing the network topologies that can exhibit bistability remains a challenge, in part due to the exceedingly large variety of GRNs that exist for even a small number of components. We begin to address this problem by employing chemical reaction network theory in a comprehensive in silico survey to determine the capacity for bistability of more than 40,000 simple networks that can be formed by two transcription factor-coding genes and their associated proteins (assuming only the most elementary biochemical processes. We find that there exist reaction rate constants leading to bistability in ∼90% of these GRN models, including several circuits that do not contain any of the TF cooperativity commonly associated with bistable systems, and the majority of which could only be identified as bistable through an original subnetwork-based analysis. A topological sorting of the two-gene family of networks based on the presence or absence of biochemical reactions reveals eleven minimal bistable networks (i.e., bistable networks that do not contain within them a smaller bistable subnetwork. The large number of previously unknown bistable network topologies suggests that the capacity for switch-like behavior in GRNs arises with relative ease and is not easily lost through network evolution. To highlight the relevance of the systematic application of CRNT to bistable network identification in real biological systems, we integrated publicly available protein-protein interaction, protein-DNA interaction, and gene expression data from Saccharomyces cerevisiae, and identified several GRNs predicted to behave in a bistable fashion.

  1. Fractionation of parietal function in bistable perception probed with concurrent TMS-EEG.

    Science.gov (United States)

    Schauer, Georg; Chang, Acer; Schwartzman, David; Rae, Charlotte L; Iriye, Heather; Seth, Anil K; Kanai, Ryota

    2016-08-16

    When visual input has conflicting interpretations, conscious perception can alternate spontaneously between these possible interpretations. This is called bistable perception. Previous neuroimaging studies have indicated the involvement of two right parietal areas in resolving perceptual ambiguity (ant-SPLr and post-SPLr). Transcranial magnetic stimulation (TMS) studies that selectively interfered with the normal function of these regions suggest that they play opposing roles in this type of perceptual switch. In the present study, we investigated this fractionation of parietal function by use of combined TMS with electroencephalography (EEG). Specifically, while participants viewed either a bistable stimulus, a replay stimulus, or resting-state fixation, we applied single pulse TMS to either location independently while simultaneously recording EEG. Combined with participant's individual structural magnetic resonance imaging (MRI) scans, this dataset allows for complex analyses of the effect of TMS on neural time series data, which may further elucidate the causal role of the parietal cortex in ambiguous perception.

  2. Balancing bistable perception during self-motion.

    Science.gov (United States)

    van Elk, Michiel; Blanke, Olaf

    2012-10-01

    In two experiments we investigated whether bistable visual perception is influenced by passive own body displacements due to vestibular stimulation. For this we passively rotated our participants around the vertical (yaw) axis while observing different rotating bistable stimuli (bodily or non-bodily) with different ambiguous motion directions. Based on previous work on multimodal effects on bistable perception, we hypothesized that vestibular stimulation should alter bistable perception and that the effects should differ for bodily versus non-bodily stimuli. In the first experiment, it was found that the rotation bias (i.e., the difference between the percentage of time that a CW or CCW rotation was perceived) was selectively modulated by vestibular stimulation: the perceived duration of the bodily stimuli was longer for the rotation direction congruent with the subject's own body rotation, whereas the opposite was true for the non-bodily stimulus (Necker cube). The results found in the second experiment extend the findings from the first experiment and show that these vestibular effects on bistable perception only occur when the axis of rotation of the bodily stimulus matches the axis of passive own body rotation. These findings indicate that the effect of vestibular stimulation on the rotation bias depends on the stimulus that is presented and the rotation axis of the stimulus. Although most studies on vestibular processing have traditionally focused on multisensory signal integration for posture, balance, and heading direction, the present data show that vestibular self-motion influences the perception of bistable bodily stimuli revealing the importance of vestibular mechanisms for visual consciousness.

  3. Bistable Microvalve For Use With Microcatheter System

    Science.gov (United States)

    Seward, Kirk Patrick

    2003-12-16

    A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can be opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

  4. Unidirectional Transition Waves in Bistable Lattices.

    Science.gov (United States)

    Nadkarni, Neel; Arrieta, Andres F; Chong, Christopher; Kochmann, Dennis M; Daraio, Chiara

    2016-06-17

    We present a model system for strongly nonlinear transition waves generated in a periodic lattice of bistable members connected by magnetic links. The asymmetry of the on-site energy wells created by the bistable members produces a mechanical diode that supports only unidirectional transition wave propagation with constant wave velocity. We theoretically justify the cause of the unidirectionality of the transition wave and confirm these predictions by experiments and simulations. We further identify how the wave velocity and profile are uniquely linked to the double-well energy landscape, which serves as a blueprint for transition wave control.

  5. Bistable firing properties of soleus motor units in unrestrained rats

    DEFF Research Database (Denmark)

    EKEN, T.; KIEHN, O.

    1989-01-01

    of the motoneuron pool by stimulation of la afferents, or inhibition by stimulation of skin afferents. The shifts were not related to gross limb movements. This phenomenon is referred to as a bistable firing pattern. Bistable firing also occurred spontaneously during quiet standing. Typically the firing frequency...... was unchanged or only phasically influenced. These results demonstrate for the first time a bistable firing pattern during postural activity in the intact animal. The firing pattern closely resembles the bistable behaviour described in spinal motoneurons in reduced preparations, where it is due to the presence...... of a plateau potential. This suggests that the bistable firing is unexplained by plateau potentials also in the intact animal....

  6. Neuromechanistic Model of Auditory Bistability.

    Directory of Open Access Journals (Sweden)

    James Rankin

    2015-11-01

    Full Text Available Sequences of higher frequency A and lower frequency B tones repeating in an ABA- triplet pattern are widely used to study auditory streaming. One may experience either an integrated percept, a single ABA-ABA- stream, or a segregated percept, separate but simultaneous streams A-A-A-A- and -B---B--. During minutes-long presentations, subjects may report irregular alternations between these interpretations. We combine neuromechanistic modeling and psychoacoustic experiments to study these persistent alternations and to characterize the effects of manipulating stimulus parameters. Unlike many phenomenological models with abstract, percept-specific competition and fixed inputs, our network model comprises neuronal units with sensory feature dependent inputs that mimic the pulsatile-like A1 responses to tones in the ABA- triplets. It embodies a neuronal computation for percept competition thought to occur beyond primary auditory cortex (A1. Mutual inhibition, adaptation and noise are implemented. We include slow NDMA recurrent excitation for local temporal memory that enables linkage across sound gaps from one triplet to the next. Percepts in our model are identified in the firing patterns of the neuronal units. We predict with the model that manipulations of the frequency difference between tones A and B should affect the dominance durations of the stronger percept, the one dominant a larger fraction of time, more than those of the weaker percept-a property that has been previously established and generalized across several visual bistable paradigms. We confirm the qualitative prediction with our psychoacoustic experiments and use the behavioral data to further constrain and improve the model, achieving quantitative agreement between experimental and modeling results. Our work and model provide a platform that can be extended to consider other stimulus conditions, including the effects of context and volition.

  7. A new concept for active bistable twisting structures

    Science.gov (United States)

    Schultz, Marc R.

    2005-05-01

    A novel type of morphing structure capable of a large change in shape with a small energy input is discussed in this paper. The considered structures consist of two curved shells that are joined in a specific manner to form a bistable airfoil-like structure. The two stable shapes have a difference in axial twist, and the structure may be transformed between the stable shapes by a simple snap-through action. The benefit of a bistable structure of this type is that, if the stable shapes are operational shapes, power is needed only to transform the structure from one shape to another. The discussed structures could be used in aerodynamic applications such as morphing wings, or as aerodynamic control surfaces. The investigation discussed in this paper considers both experiment and finite-element analysis. Several graphite-epoxy composite and one steel device were created as proof-of-concept models. To demonstrate active control of these structures, piezocomposite actuators were applied to one of the composite structures and used to transform the structure between stable shapes. The analysis was used to compare the predicted shapes with the experimental shapes, and to study how changes to the geometric input values affected the shape and operational characteristics of the structures. The predicted shapes showed excellent agreement with the experimental shapes, and the results of the parametric study suggest that the shapes and the snap-through characteristics can be easily tailored to meet specific needs.

  8. A Reliable Bistable Board Implementation through I/O Redundancy

    International Nuclear Information System (INIS)

    Kim, Min Gyu; Chung, Tae Hyok; Lee, Youn Sang; Kim, Tae Hee; Song, Seung Hwan

    2010-01-01

    Nuclear power plant safety systems and related equipment used in the design, including an accident in all driving conditions that must be proven In addition, the safety-related equipment that is derived according to the digitization of the safety equipment is the most important factors. Therefore, it is necessary to prove that the device was satisfied the requirements for a given performance for safety-related digital equipment for the life of the installation. These proven is done through the process, design verification of the equipment, production management, such as installation and maintenance. Among other things, it is most important to implement of the performance and reliability features the safety-related equipment in the design phase. In this paper, Bistable Board implemented to generate a ESF sign-on signal throughout the signal processing of input signal from sensors. Also, for the reliable signal input and output, I/O Module that implements the redundancy increases the reliability of the Bistable Board , to verify the performance of safety-related equipment

  9. Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

    Science.gov (United States)

    Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

    2010-07-27

    A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

  10. Controllable optical bistability in photonic-crystal one-atom laser

    International Nuclear Information System (INIS)

    Guo Xiaoyong; Lue Shuchen

    2009-01-01

    We investigate the property of optical bistability in a photonic-crystal one-atom laser when nonlinear microcavity is present. The physical system consists of a coherently driven two-level light emitter strongly coupled to a high-quality microcavity which is embedded within a photonic crystal and another coherent probing field which has incident into the microcavity. In our case, the microcavity is fabricated by nonlinear material and placed as an impurity in photonic crystal. This study reveals that such a system can exhibit optical bistability. The dependence of threshold value and hysteresis loop on the photonic band gap of the photonic crystal, driving field Rabi frequency and dephasing processes, are studied. Our results clearly illustrate the ability to control optical bistability through suitable photonic-crystal architectures and external coherent driving field, and this study suggests that in a photonic-crystal nonlinear microcavity, the one-atom laser acts as an effective controllable bistable device in the design of all-light digital computing systems in the near future.

  11. Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

    Science.gov (United States)

    Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

    2018-06-01

    Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

  12. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  13. Functionally rigid bistable [2]rotaxanes

    DEFF Research Database (Denmark)

    Nygaard, Sune; Leung, Ken C-F; Aprahamian, Ivan

    2007-01-01

    defines an unambiguous distance of 1.5 nm over which the ring moves between the MPTTF and NP units. The degenerate NP/NP [2]rotaxane was used to investigate the shuttling barrier by dynamic 1H NMR spectroscopy for the movement of the CBPQT4+ ring across the new rigid spacer. It is evident from...... better control over the position of the ring component in the ground state but also for control over the location of the CBPQT4+ ring during solution-state switching experiments, triggered either chemically (1H NMR) or electrochemically (cyclic voltammetry). In this instance, the use of the rigid spacer......Two-station [2]rotaxanes in the shape of a degenerate naphthalene (NP) shuttle and a nondegenerate monopyrrolotetrathiafulvalene (MPTTF)/NP redox-controllable switch have been synthesized and characterized in solution. Their dumbbell-shaped components are composed of polyether chains interrupted...

  14. Metastable and bistable defects in silicon

    International Nuclear Information System (INIS)

    Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

    2000-01-01

    Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

  15. High-Speed and Low-Energy Flip-Flop Operation of Asymmetric Active-Multimode Interferometer Bi-Stable Laser Diodes

    DEFF Research Database (Denmark)

    Jiang, Haisong; Chaen, Yutaka; Hagio, Takuma

    2011-01-01

    High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.......High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses....

  16. Triggered Snap-Through of Bistable Shells

    Science.gov (United States)

    Cai, Yijie; Huang, Shicheng; Trase, Ian; Hu, Nan; Chen, Zi

    Elastic bistable shells are common structures in nature and engineering, such as the lobes of the Venus flytrap or the surface of a toy jumping poppers. Despite their ubiquity, the parameters that control the bistability of such structures are not well understood. In this study, we explore how the geometrical features of radially symmetric elastic shells affect the shape and potential energy of a shell's stable states, and how to tune certain parameters in order to generate a snap-through transition from a convex semi-stable state to concave stable state. We fabricated a series of elastic shells with varying geometric parameters out of silicone rubber and measured the resulting potential energy in the semi-stable state. Finite element simulations were also conducted in order to determine the deformation and stress in the shells during snap-through. It was found that the energy of the semi-stable state is controlled by only two geometric parameters and a dimensionless ratio. We also noted two distinct transitions during snap-through, one between monostability and semi-bistability (the state a popper toy is in before it snaps-through and jumps), and a second transition between semi-bistability and true bistability. This work shows that it is possible to use a set of simple parameters to tailor the energy landscape of an elastic shell in order to generate complex trigger motions for their potential use in smart applications. Z.C. acknowledge support from Society in Science-Branco Weiss Fellowship, administered by ETH Zurich.

  17. The combination of positive and negative feedback loops confers exquisite flexibility to biochemical switches

    International Nuclear Information System (INIS)

    Pfeuty, Benjamin; Kaneko, Kunihiko

    2009-01-01

    A wide range of cellular processes require molecular regulatory pathways to convert a graded signal into a discrete response. One prevalent switching mechanism relies on the coexistence of two stable states (bistability) caused by positive feedback regulations. Intriguingly, positive feedback is often supplemented with negative feedback, raising the question of whether and how these two types of feedback can cooperate to control discrete cellular responses. To address this issue, we formulate a canonical model of a protein–protein interaction network and analyze the dynamics of a prototypical two-component circuit. The appropriate combination of negative and positive feedback loops can bring a bistable circuit close to the oscillatory regime. Notably, sharply activated negative feedback can give rise to a bistable regime wherein two stable fixed points coexist and may collide pairwise with two saddle points. This specific type of bistability is found to allow for separate and flexible control of switch-on and switch-off events, for example (i) to combine fast and reversible transitions, (ii) to enable transient switching responses and (iii) to display tunable noise-induced transition rates. Finally, we discuss the relevance of such bistable switching behavior, and the circuit topologies considered, to specific biological processes such as adaptive metabolic responses, stochastic fate decisions and cell-cycle transitions. Taken together, our results suggest an efficient mechanism by which positive and negative feedback loops cooperate to drive the flexible and multifaceted switching behaviors arising in biological systems

  18. Angular dependence of the exchange bias for the bistable state

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Yuhao [College of Physics and Electronic Information, Shanxi Normal University, Linfen 041004 (China); Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn [Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004 (China)

    2017-06-15

    The angular dependence of the exchange bias (ADEB) has been investigated in detail when the exchange-coupled ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is in the bistable state. Complete and incomplete jump phenomena were found at the intrinsic easy and hard axes, when they pass through two special positions making the angular deviation of 58.2826° and 121.7174° from the easy axis of the uniaxial anisotropy, respectively. The combination of these different types of the jump phenomena at the intrinsic easy and hard axes yields five distinct types of the ADEB. The physical condition for each type of ADEB is established. Additionally, the extreme value problem of the exchange bias field and coercivity are also discussed, which is an important technological issue in the design of the magnetoresistive and spintronic devices. These results enable us to make a comprehensive understanding of the experimental ADEB curves.

  19. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2015-10-15

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  20. Generalized nematohydrodynamic boundary conditions with application to bistable twisted nematic liquid-crystal displays

    KAUST Repository

    Fang, Angbo; Qian, Tiezheng; Sheng, Ping

    2008-01-01

    rate. This can be utilized to improve the performance of electro-optical nematic devices by lowering the required switching voltages and reducing the switching times. © 2008 The American Physical Society.

  1. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  2. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    International Nuclear Information System (INIS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  3. Bistable perception modeled as competing stochastic integrations at two levels.

    Science.gov (United States)

    Gigante, Guido; Mattia, Maurizio; Braun, Jochen; Del Giudice, Paolo

    2009-07-01

    We propose a novel explanation for bistable perception, namely, the collective dynamics of multiple neural populations that are individually meta-stable. Distributed representations of sensory input and of perceptual state build gradually through noise-driven transitions in these populations, until the competition between alternative representations is resolved by a threshold mechanism. The perpetual repetition of this collective race to threshold renders perception bistable. This collective dynamics - which is largely uncoupled from the time-scales that govern individual populations or neurons - explains many hitherto puzzling observations about bistable perception: the wide range of mean alternation rates exhibited by bistable phenomena, the consistent variability of successive dominance periods, and the stabilizing effect of past perceptual states. It also predicts a number of previously unsuspected relationships between observable quantities characterizing bistable perception. We conclude that bistable perception reflects the collective nature of neural decision making rather than properties of individual populations or neurons.

  4. Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

    Science.gov (United States)

    Maeda, Y

    1994-01-10

    Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

  5. Modeling bistable cell-fate choices in the Drosophila eye: qualitative and quantitative perspectives

    Science.gov (United States)

    Graham, Thomas G. W.; Tabei, S. M. Ali; Dinner, Aaron R.; Rebay, Ilaria

    2010-01-01

    A major goal of developmental biology is to understand the molecular mechanisms whereby genetic signaling networks establish and maintain distinct cell types within multicellular organisms. Here, we review cell-fate decisions in the developing eye of Drosophila melanogaster and the experimental results that have revealed the topology of the underlying signaling circuitries. We then propose that switch-like network motifs based on positive feedback play a central role in cell-fate choice, and discuss how mathematical modeling can be used to understand and predict the bistable or multistable behavior of such networks. PMID:20570936

  6. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  7. Optical bistability and multistability in polaritonic materials doped with nanoparticles

    International Nuclear Information System (INIS)

    Wang, Zhiping; Yu, Benli

    2014-01-01

    We investigate the optical bistability and multistability in polaritonic materials doped with nanoparticles inside an optical ring cavity. It is found that the optical bistability and multistability can be easily controlled by adjusting the corresponding parameters of the system properly. The effect of the dipole–dipole interaction has also been included in the formulation, which leads to interesting phenomena. Our scheme opens up the possibility of controling the optical bistability and multistability in polaritonic materials doped with nanoparticles. (letter)

  8. A steady state analysis indicates that negative feedback regulation of PTP1B by Akt elicits bistability in insulin-stimulated GLUT4 translocation

    Directory of Open Access Journals (Sweden)

    Giri Lopamudra

    2004-08-01

    Full Text Available Abstract Background The phenomenon of switch-like response to graded input signal is the theme involved in various signaling pathways in living systems. Positive feedback loops or double negative feedback loops embedded with nonlinearity exhibit these switch-like bistable responses. Such feedback regulations exist in insulin signaling pathway as well. Methods In the current manuscript, a steady state analysis of the metabolic insulin-signaling pathway is presented. The threshold concentration of insulin required for glucose transporter GLUT4 translocation was studied with variation in system parameters and component concentrations. The dose response curves of GLUT4 translocation at various concentration of insulin obtained by steady state analysis were quantified in-terms of half saturation constant. Results We show that, insulin-stimulated GLUT4 translocation can operate as a bistable switch, which ensures that GLUT4 settles between two discrete, but mutually exclusive stable steady states. The threshold concentration of insulin required for GLUT4 translocation changes with variation in system parameters and component concentrations, thus providing insights into possible pathological conditions. Conclusion A steady state analysis indicates that negative feedback regulation of phosphatase PTP1B by Akt elicits bistability in insulin-stimulated GLUT4 translocation. The threshold concentration of insulin required for GLUT4 translocation and the corresponding bistable response at different system parameters and component concentrations was compared with reported experimental observations on specific defects in regulation of the system.

  9. Microstructure evolution characteristics induced by oxygen vacancy generation in anatase TiO2 based resistive switching devices

    Science.gov (United States)

    Liu, Chen; Gao, Bin; Huang, Peng; Kang, Jinfeng

    2017-03-01

    In this work, first principle calculations are employed to study the microstructure characteristics of the anatase TiO2 resistive switching material associated with the generation of oxygen vacancy (V o) based nanofilaments during the switching process. The calculations indicate that both the magnéli phase Ti4O7 and V o-defect phase of anatase TiO2 may be formed with the generation of oxygen vacancies during the forming and SET processes. Based on the calculations, a new physical insight is proposed to clarify the microstructure evolution characteristics of the anatase TiO2 resistive switching material and the correlation with resistive switching behaviors. During the forming or SET process, the anatase TiO2 is first excited to a transition state with the generation of oxygen vacancies, then fully relaxes to a stable V o-defect state. This V o-defect state may either recover to the original state with the recombination of the oxygen vacancies, which causes the reversible resistive switching behavior, or further transform to a much more stable state—the magnéli phase Ti4O7, through a phase transition process with the generation of many more oxygen vacancies. The phase transition from V o- defective anatase phase to magnéli phase Ti4O7 causes the failure of the resistive switching due to the significantly reduced possibility of the reversible phase transition from the magnéli phase to the anatase phase, compared with the possibility of the recombination from the V o-defective anatase.

  10. Durable bistable auxetics made of rigid solids

    Science.gov (United States)

    Shang, Xiao; Liu, Lu; Rafsanjani, Ahmad; Pasini, Damiano

    2018-02-01

    Bistable Auxetic Metamaterials (BAMs) are a class of monolithic perforated periodic structures with negative Poisson's ratio. Under tension, a BAM can expand and reach a second state of equilibrium through a globally large shape transformation that is ensured by the flexibility of its elastomeric base material. However, if made from a rigid polymer, or metal, BAM ceases to function due to the inevitable rupture of its ligaments. The goal of this work is to extend the unique functionality of the original kirigami architecture of BAM to a rigid solid base material. We use experiments and numerical simulations to assess performance, bistability and durability of rigid BAMs at 10,000 cycles. Geometric maps are presented to elucidate the role of the main descriptors of BAM architecture. The proposed design enables the realization of BAM from a large palette of materials, including elastic-perfectly plastic materials and potentially brittle materials.

  11. Bistable (latching) solenoid actuated propellant isolation valve

    Science.gov (United States)

    Wichmann, H.; Deboi, H. H.

    1979-01-01

    The design, fabrication, assembly and test of a development configuration bistable (latching) solenoid actuated propellant isolation valve suitable for the control hydrazine and liquid fluorine to an 800 pound thrust rocket engine is described. The valve features a balanced poppet, utilizing metal bellows, a hard poppet/seat interface and a flexure support system for the internal moving components. This support system eliminates sliding surfaces, thereby rendering the valve free of self generated particles.

  12. Dynamics of unidirectionally coupled bistable Henon maps

    International Nuclear Information System (INIS)

    Sausedo-Solorio, J.M.; Pisarchik, A.N.

    2011-01-01

    We study dynamics of two bistable Henon maps coupled in a master-slave configuration. In the case of coexistence of two periodic orbits, the slave map evolves into the master map state after transients, which duration determines synchronization time and obeys a -1/2 power law with respect to the coupling strength. This scaling law is almost independent of the map parameter. In the case of coexistence of chaotic and periodic attractors, very complex dynamics is observed, including the emergence of new attractors as the coupling strength is increased. The attractor of the master map always exists in the slave map independently of the coupling strength. For a high coupling strength, complete synchronization can be achieved only for the attractor similar to that of the master map. -- Highlights: → We study dynamics of two bistable Henon maps coupled in a master-slave configuration. → Synchronization time for periodic orbits obeys a -1/2 power law with respect to coupling. → For a high coupling strength, the slave map remains bistable. → Complete synchronization can be achieved only when both maps stay at the same attractor.

  13. Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, swit...... losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %....

  14. THESEUS: A wavelength division multiplexed/microwave subcarrier multiplexed optical network, its ATM switch applications and device requirements

    Science.gov (United States)

    Xin, Wei

    1997-10-01

    A Terabit Hybrid Electro-optical /underline[Se]lf- routing Ultrafast Switch (THESEUS) has been proposed. It is a self-routing wavelength division multiplexed (WDM) / microwave subcarrier multiplexed (SCM) asynchronous transfer mode (ATM) switch for the multirate ATM networks. It has potential to be extended to a large ATM switch as 1000 x 1000 without internal blocking. Among the advantages of the hybrid implementation are flexibility in service upgrade, relaxed tolerances on optical filtering, protocol simplification and less processing overhead. For a small ATM switch, the subcarrier can be used as output buffers to solve output contention. A mathematical analysis was conducted to evaluate different buffer configurations. A testbed has been successfully constructed. Multirate binary data streams have been switched through the testbed and error free reception ([<]10-9 bit error rate) has been achieved. A simple, intuitive theoretical model has been developed to describe the heterodyne optical beat interference. A new concept of interference time and interference length has been introduced. An experimental confirmation has been conducted. The experimental results match the model very well. It shows that a large portion of optical bandwidth is wasted due to the beat interference. Based on the model, several improvement approaches have been proposed. The photo-generated carrier lifetime of silicon germanium has been measured using time-resolved reflectivity measurement. Via oxygen ion implantation, the carrier lifetime has been reduced to as short as 1 ps, corresponding to 1 THz of photodetector bandwidth. It has also been shown that copper dopants act as recombination centers in the silicon germanium.

  15. Vibration Energy Harvester with Bi-stable Curved Beam Spring Offset by Gravitational Acceleration

    International Nuclear Information System (INIS)

    Yamamoto, Koki; Fujita, Takayuki; Kanda, Kensuke; Maenaka, Kazusuke; Badel, Adrien; Formosa, Fabien

    2015-01-01

    We developed MEMS bi-stable spring for vibration energy harvester (VEH), which consists of intrinsically curved shape spring and gravitational acceleration. By applying the gravitational acceleration, the curved beam is offset to the gravity direction. It will make more symmetrical bi-stable motion and the symmetry is improved from 3.3 to 65.4%. We proposed that the combination between curved beam and gravity acceleration for decreasing snap- through acceleration. From the analytical result, we investigate the combination can effective to use for decreasing of snap-through force. We also fabricated the prototype device by using MEMS fabrication process. The frequency response for horizontal direction and the acceleration response for vertical direction are measured. The acceleration response shows that the gravitational acceleration improves the symmetry of snap-through force. (paper)

  16. Bistability in self-activating genes regulated by non-coding RNAs

    International Nuclear Information System (INIS)

    Miro-Bueno, Jesus

    2015-01-01

    Non-coding RNA molecules are able to regulate gene expression and play an essential role in cells. On the other hand, bistability is an important behaviour of genetic networks. Here, we propose and study an ODE model in order to show how non-coding RNA can produce bistability in a simple way. The model comprises a single gene with positive feedback that is repressed by non-coding RNA molecules. We show how the values of all the reaction rates involved in the model are able to control the transitions between the high and low states. This new model can be interesting to clarify the role of non-coding RNA molecules in genetic networks. As well, these results can be interesting in synthetic biology for developing new genetic memories and biomolecular devices based on non-coding RNAs

  17. A synaptic device built in one diode-one resistor (1D-1R) architecture with intrinsic SiOx-based resistive switching memory

    Science.gov (United States)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Sze, Simon M.; Lee, Jack C.

    2016-04-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

  18. Analysis of Ti valence states in resistive switching regions of a rutile TiO2‑ x four-terminal memristive device

    Science.gov (United States)

    Yamaguchi, Kengo; Takeuchi, Shotaro; Tohei, Tetsuya; Ikarashi, Nobuyuki; Sakai, Akira

    2018-06-01

    We have performed Ti valence state analysis of our four-terminal rutile TiO2‑ x single-crystal memristors using scanning transmission electron microscopy–electron energy loss spectroscopy (STEM–EELS). Analysis of Ti-L2,3 edge EELS spectra revealed that the electrocolored region formed by the application of voltage includes a valence state reflecting highly reduced TiO2‑ x due to the accumulation of oxygen vacancies. Such a valence state mainly exists within ∼50 nm from the crystal surface and extends along specific crystal directions. These electrically reduced surface layers are considered to directly contribute to the resistive switching (RS) in the four-terminal device. The present results add new insights into the microscopic mechanisms of the RS phenomena and should contribute to further development and improvements of TiO2‑ x based memristive devices.

  19. Switching Device Dead Time Optimization of Resonant Double-Sided LCC Wireless Charging System for Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Xi Zhang

    2017-11-01

    Full Text Available Aiming at the reduction of the influence of the dead time setting on power level and efficiency of the inverter of double-sided LCC resonant wireless power transfer (WPT system, a dead time soft switching optimization method for metal–oxide–semiconductor field-effect transistor (MOSFET is proposed. At first, the mathematic description of double-sided LCC resonant wireless charging system is established, and the operating mode is analyzed as well, deducing the quantitative characteristic that the secondary side compensation capacitor C2 can be adjusted to ensure that the circuit is inductive. A dead time optimization design method is proposed, contributing to achieving zero-voltage switching (ZVS of the inverter, which is closely related to the performance of the WPT system. In the end, a prototype is built. The experimental results verify that dead time calculated by this optimized method can ensure the soft switching of the inverter MOSFET and promote the power and efficiency of the WPT.

  20. Bistable electroactive polymer for refreshable Braille display with improved actuation stability

    Science.gov (United States)

    Niu, Xiaofan; Brochu, Paul; Stoyanov, Hristiyan; Yun, Sung Ryul; Pei, Qibing

    2012-04-01

    Poly(t-butyl acrylate) is a bistable electroactive polymer (BSEP) capable of rigid-to-rigid actuation. The BSEP combines the large-strain actuation of dielectric elastomers with shape memory property. We have introduced a material approach to overcome pull-in instability in poly(t-butyl acrylate) that significantly improves the actuation lifetime at strains greater than 100%. Refreshable Braille display devices with size of a smartphone screen have been fabricated to manifest a potential application of the BSEP. We will report the testing results of the devices by a Braille user.

  1. Bubbling and bistability in two parameter discrete systems

    OpenAIRE

    Ambika, G.; Sujatha, N. V.

    2000-01-01

    We present a graphical analysis of the mechanisms underlying the occurrences of bubbling sequences and bistability regions in the bifurcation scenario of a special class of one dimensional two parameter maps. The main result of the analysis is that whether it is bubbling or bistability is decided by the sign of the third derivative at the inflection point of the map function.

  2. Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

    NARCIS (Netherlands)

    Ghosh, Anirban; Koster, Gertjan; Rijnders, Augustinus J.H.M.

    2016-01-01

    Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological

  3. Amplification without inversion, fast light and optical bistability in a duplicated two-level system

    International Nuclear Information System (INIS)

    Ebrahimi Zohravi, Lida; Vafafard, Azar; Mahmoudi, Mohammad

    2014-01-01

    The optical properties of a weak probe field in a duplicated two-level system are investigated in multi-photon resonance (MPR) condition and beyond it. It is shown that by changing the relative phase of applied fields, the absorption switches to the amplification without inversion in MPR condition. By applying the Floquet decomposition to the equations of motion beyond MPR condition, it is shown that the phase-dependent behavior is valid only in MPR condition. Moreover, it is demonstrated that the group velocity of light pulse can be controlled by the intensity of the applied fields and the gain-assisted superluminal light propagation (fast light) is obtained in this system. In addition, the optical bistability (OB) behavior of the system is studied beyond MPR condition. We apply an indirect incoherent pumping field to the system and it is found that the group velocity and OB behavior of the system can be controlled by the incoherent pumping rate. - Highlights: • We studied the optical properties of DTL system under MPR condition and beyond it. • By changing the relative phase, the absorption switches to the amplification without inversion in MPR condition. • The gain-assisted superluminal light propagation (fast light) is obtained in this system. • The optical bistability (OB) behavior of the system is studied beyond MPR condition. • The incoherent pumping rate has a major role in controlling the group velocity and OB behavior of the system

  4. Bistability and hysteresis of the 'Secteur' differentiation are controlled by a two-gene locus in Nectria haematococca

    Directory of Open Access Journals (Sweden)

    Daboussi Marie-Josée

    2004-08-01

    Full Text Available Abstract Background Bistability and hysteresis are increasingly recognized as major properties of regulatory networks governing numerous biological phenomena, such as differentiation and cell cycle progression. The full scope of the underlying molecular mechanisms leading to bistability and hysteresis remains elusive. Nectria haemaotcocca, a saprophytic or pathogenic fungus with sexual reproduction, exhibits a bistable morphological modification characterized by a reduced growth rate and an intense pigmentation. Bistability is triggered by the presence or absence of σ, a cytoplasmic determinant. This determinant spreads in an infectious manner in the hyphae of the growing margin, insuring hysteresis of the differentiation. Results Seven mutants specifically affected in the generation of σ were selected through two different screening strategies. The s1 and s2 mutations completely abolish the generation of σ and of its morphological expression, the Secteur. The remaining five mutations promote its constitutive generation, which determines an intense pigmentation but not growth alteration. The seven mutations map at the same locus, Ses (for 'Secteur-specific'. The s2 mutant was obtained by an insertional mutagenesis strategy, which permitted the cloning of the Ses locus. Sequence and transcription analysis reveals that Ses is composed of two closely linked genes, SesA, mutated in the s1 and s2 mutant strains, and SesB, mutated in the s* mutant strains. SesB shares sequence similarity with animal and fungal putative proteins, with potential esterase/lipase/thioesterase activity, whereas SesA is similar to proteins of unknown function present only in the filamentous fungi Fusarium graminearum and Podospora anserina. Conclusions The cloning of Ses provides evidence that a system encoded by two linked genes directs a bistable and hysteretic switch in a eukaryote. Atypical regulatory relations between the two proteins may account for the hysteresis

  5. Bistability and hysteresis of the 'Secteur' differentiation are controlled by a two-gene locus in Nectria haematococca

    Science.gov (United States)

    Graziani, Stéphane; Silar, Philippe; Daboussi, Marie-Josée

    2004-01-01

    Background Bistability and hysteresis are increasingly recognized as major properties of regulatory networks governing numerous biological phenomena, such as differentiation and cell cycle progression. The full scope of the underlying molecular mechanisms leading to bistability and hysteresis remains elusive. Nectria haemaotcocca, a saprophytic or pathogenic fungus with sexual reproduction, exhibits a bistable morphological modification characterized by a reduced growth rate and an intense pigmentation. Bistability is triggered by the presence or absence of σ, a cytoplasmic determinant. This determinant spreads in an infectious manner in the hyphae of the growing margin, insuring hysteresis of the differentiation. Results Seven mutants specifically affected in the generation of σ were selected through two different screening strategies. The s1 and s2 mutations completely abolish the generation of σ and of its morphological expression, the Secteur. The remaining five mutations promote its constitutive generation, which determines an intense pigmentation but not growth alteration. The seven mutations map at the same locus, Ses (for 'Secteur-specific'). The s2 mutant was obtained by an insertional mutagenesis strategy, which permitted the cloning of the Ses locus. Sequence and transcription analysis reveals that Ses is composed of two closely linked genes, SesA, mutated in the s1 and s2 mutant strains, and SesB, mutated in the s* mutant strains. SesB shares sequence similarity with animal and fungal putative proteins, with potential esterase/lipase/thioesterase activity, whereas SesA is similar to proteins of unknown function present only in the filamentous fungi Fusarium graminearum and Podospora anserina. Conclusions The cloning of Ses provides evidence that a system encoded by two linked genes directs a bistable and hysteretic switch in a eukaryote. Atypical regulatory relations between the two proteins may account for the hysteresis of Secteur differentiation

  6. Optical bistability using quantum interference in V-type atoms

    International Nuclear Information System (INIS)

    Anton, M A; Calderon, Oscar G

    2002-01-01

    The behaviour of a V-type three-level atomic system in a ring cavity driven by a coherent field is studied. We consider a V configuration under conditions such that interference between decay channels is important. We find that when quantum interference is taken into account, optical bistability can be realized with a considerable decrease in the threshold intensity and the cooperative parameter. On the other hand, we also include the finite bandwidth of the driving field and study its role in the optical bistable response. It is found that at certain linewidths of the driving field optical bistability is obtained even if the system satisfies the trapping condition and the threshold intensity can be controlled. Furthermore, a change from the optical bistability due to quantum interference to the usual bistable behaviour based on saturation occurs as the driving field linewidth increases

  7. Relatively slow stochastic gene-state switching in the presence of positive feedback significantly broadens the region of bimodality through stabilizing the uninduced phenotypic state.

    Science.gov (United States)

    Ge, Hao; Wu, Pingping; Qian, Hong; Xie, Xiaoliang Sunney

    2018-03-01

    Within an isogenic population, even in the same extracellular environment, individual cells can exhibit various phenotypic states. The exact role of stochastic gene-state switching regulating the transition among these phenotypic states in a single cell is not fully understood, especially in the presence of positive feedback. Recent high-precision single-cell measurements showed that, at least in bacteria, switching in gene states is slow relative to the typical rates of active transcription and translation. Hence using the lac operon as an archetype, in such a region of operon-state switching, we present a fluctuating-rate model for this classical gene regulation module, incorporating the more realistic operon-state switching mechanism that was recently elucidated. We found that the positive feedback mechanism induces bistability (referred to as deterministic bistability), and that the parameter range for its occurrence is significantly broadened by stochastic operon-state switching. We further show that in the absence of positive feedback, operon-state switching must be extremely slow to trigger bistability by itself. However, in the presence of positive feedback, which stabilizes the induced state, the relatively slow operon-state switching kinetics within the physiological region are sufficient to stabilize the uninduced state, together generating a broadened parameter region of bistability (referred to as stochastic bistability). We illustrate the opposite phenotype-transition rate dependence upon the operon-state switching rates in the two types of bistability, with the aid of a recently proposed rate formula for fluctuating-rate models. The rate formula also predicts a maximal transition rate in the intermediate region of operon-state switching, which is validated by numerical simulations in our model. Overall, our findings suggest a biological function of transcriptional "variations" among genetically identical cells, for the emergence of bistability and

  8. Dynamics and control of twisting bi-stable structures

    Science.gov (United States)

    Arrieta, Andres F.; van Gemmeren, Valentin; Anderson, Aaron J.; Weaver, Paul M.

    2018-02-01

    Compliance-based morphing structures have the potential to offer large shape adaptation, high stiffness and low weight, while reducing complexity, friction, and scalability problems of mechanism based systems. A promising class of structure that enables these characteristics are multi-stable structures given their ability to exhibit large deflections and rotations without the expensive need for continuous actuation, with the latter only required intermittently. Furthermore, multi-stable structures exhibit inherently fast response due to the snap-through instability governing changes between stable states, enabling rapid configuration switching between the discrete number of programmed shapes of the structure. In this paper, the design and utilisation of the inherent nonlinear dynamics of bi-stable twisting I-beam structures for actuation with low strain piezoelectric materials is presented. The I-beam structure consists of three compliant components assembled into a monolithic single element, free of moving parts, and showing large deflections between two stable states. Finite element analysis is utilised to uncover the distribution of strain across the width of the flange, guiding the choice of positioning for piezoelectric actuators. In addition, the actuation authority is maximised by calculating the generalised coupling coefficient for different positions of the piezoelectric actuators. The results obtained are employed to tailor and test I-beam designs exhibiting desired large deflection between stable states, while still enabling the activation of snap-through with the low strain piezoelectric actuators. To this end, the dynamic response of the I-beams to piezoelectric excitation is investigated, revealing that resonant excitations are insufficient to dynamically trigger snap-through. A novel bang-bang control strategy, which exploits the nonlinear dynamics of the structure successfully triggers both single and constant snap-through between the stable states

  9. Manually operated coded switch

    International Nuclear Information System (INIS)

    Barnette, J.H.

    1978-01-01

    The disclosure related to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made

  10. Feedback-induced bistability of an optically levitated nanoparticle: A Fokker-Planck treatment

    Science.gov (United States)

    Ge, Wenchao; Rodenburg, Brandon; Bhattacharya, M.

    2016-08-01

    Optically levitated nanoparticles have recently emerged as versatile platforms for investigating macroscopic quantum mechanics and enabling ultrasensitive metrology. In this paper we theoretically consider two damping regimes of an optically levitated nanoparticle cooled by cavityless parametric feedback. Our treatment is based on a generalized Fokker-Planck equation derived from the quantum master equation presented recently and shown to agree very well with experiment [B. Rodenburg, L. P. Neukirch, A. N. Vamivakas, and M. Bhattacharya, Quantum model of cooling and force sensing with an optically trapped nanoparticle, Optica 3, 318 (2016), 10.1364/OPTICA.3.000318]. For low damping, we find that the resulting Wigner function yields the single-peaked oscillator position distribution and recovers the appropriate energy distribution derived earlier using a classical theory and verified experimentally [J. Gieseler, R. Quidant, C. Dellago, and L. Novotny, Dynamic relaxation of a levitated nanoparticle from a non-equilibrium steady state, Nat. Nano. 9, 358 (2014), 10.1038/nnano.2014.40]. For high damping, in contrast, we predict a double-peaked position distribution, which we trace to an underlying bistability induced by feedback. Unlike in cavity-based optomechanics, stochastic processes play a major role in determining the bistable behavior. To support our conclusions, we present analytical expressions as well as numerical simulations using the truncated Wigner function approach. Our work opens up the prospect of developing bistability-based devices, characterization of phase-space dynamics, and investigation of the quantum-classical transition using levitated nanoparticles.

  11. Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

    Science.gov (United States)

    2007-08-01

    epilayers studied by positron annihilation and deep level transient spectroscopy ," Appl. Phys. Lett., vol. 90, p. 3377, 2001. [30] L. Storasta, J. P...the projected long-term lifetime is acceptable for power device applications . For devices in which the MOS interface is formed on implanted layers...TRPL) techniques, while deep level centers in the material are characterized by deep-level transient spectroscopy (DLTS). We found that the

  12. Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

    Science.gov (United States)

    Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

    2013-01-01

    The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

  13. Switching patients from other inhaled corticosteroid devices to the Easyhaler®: historical, matched-cohort study of real-life asthma patients

    Directory of Open Access Journals (Sweden)

    Price D

    2014-04-01

    Full Text Available David Price,1,2 Vicky Thomas,2 Julie von Ziegenweidt,2 Shuna Gould,2 Catherine Hutton,2 Christine King2 1Academic Centre of Primary Care, University of Aberdeen, Aberdeen, UK; 2Research in Real Life, Oakington, Cambridge, UK Purpose: To investigate the clinical and cost effectiveness of switching real-life asthma patients from other types of inhalers to the Easyhaler® (EH for the administration of inhaled corticosteroids (ICS. Patients and methods: Historical, matched-cohort study of 1,958 asthma patients (children and adults treated in UK primary-care practices, using data obtained from the Optimum Patient Care Research Database and Clinical Practice Research Datalink. Other inhalers (OH included pressurized metered-dose inhalers, breath-actuated inhalers, and dry-powder inhalers, delivering beclomethasone, budesonide, fluticasone, or ciclesonide. Patients remaining on OH unchanged (same drug, dosage, and device; n=979 were matched 1:1 with those switched to the EH (beclomethasone or budesonide at the same or lower ICS dosage (n=979, based on age, sex, year of index patient review/switch, most recent ICS drug, dosage, and device, and the number of severe exacerbations and average daily short-acting β2 agonist (SABA dosage in the preceding year. Clinical outcomes and health care costs were compared between groups for 12 months before and after the switch. Co-primary clinical outcomes were: 1 risk domain asthma control (RDAC – no asthma-related hospitalization, acute oral steroid use, or lower respiratory tract infection (LRTI; 2 exacerbation rate (American Thoracic Society [ATS] definition – where exacerbation is asthma-related hospitalization or acute oral steroid use; 3 exacerbation rate (clinical definition – where exacerbation is ATS exacerbation or LRTI; and 4 overall asthma control (OAC – RDAC plus average salbutamol-equivalent SABA dosage ≤200 μg/day. Non-inferiority (at least equivalence of EH was tested against OH for the

  14. Deployable structures using bistable reeled composites

    Science.gov (United States)

    Daton-Lovett, Andrew J.; Compton-Bishop, Quentin M.; Curry, Richard G.

    2000-06-01

    This paper describes an innovative, patented use of composite materials developed by RolaTube Technology Ltd. to make smart deployable structures. Bi-stable reeled composites (BRCs) can alternate between two stable forms; that of a strong, rigid structure and that of a compact coil of flat-wound material. Bi-stability arises as a result of the manipulation of Poisson's ratio and isotropy in the various layers of the material. BRCs are made of fiber- reinforced composite materials, most often with a thermoplastic matrix. A range of fibers and polymer matrices can be used according to the requirements of the operating environment. Samples of a BRC structure were constructed using layers of unidirectional, fiber-reinforced thermoplastic sheet with the layers at different angles. The whole assembly was then consolidated under conditions of elevated temperature and pressure. The properties of the BRC are described and the result of a series of experiments performed on the sample to determine the tensile strength of the BRC structure are reported. A full analysis using finite element methods is being undertaken in collaboration with the University of Cambridge, England. The first commercial use has been to fabricate boom and drive mechanisms for the remote inspection of industrial plant.

  15. An analytical approach for predicting the energy capture and conversion by impulsively-excited bistable vibration energy harvesters

    Science.gov (United States)

    Harne, R. L.; Zhang, Chunlin; Li, Bing; Wang, K. W.

    2016-07-01

    Impulsive energies are abundant throughout the natural and built environments, for instance as stimulated by wind gusts, foot-steps, or vehicle-road interactions. In the interest of maximizing the sustainability of society's technological developments, one idea is to capture these high-amplitude and abrupt energies and convert them into usable electrical power such as for sensors which otherwise rely on less sustainable power supplies. In this spirit, the considerable sensitivity to impulse-type events previously uncovered for bistable oscillators has motivated recent experimental and numerical studies on the power generation performance of bistable vibration energy harvesters. To lead to an effective and efficient predictive tool and design guide, this research develops a new analytical approach to estimate the electroelastic response and power generation of a bistable energy harvester when excited by an impulse. Comparison with values determined by direct simulation of the governing equations shows that the analytically predicted net converted energies are very accurate for a wide range of impulse strengths. Extensive experimental investigations are undertaken to validate the analytical approach and it is seen that the predicted estimates of the impulsive energy conversion are in excellent agreement with the measurements, and the detailed structural dynamics are correctly reproduced. As a result, the analytical approach represents a significant leap forward in the understanding of how to effectively leverage bistable structures as energy harvesting devices and introduces new means to elucidate the transient and far-from-equilibrium dynamics of nonlinear systems more generally.

  16. Ca++ dependent bistability induced by serotonin in spinal motoneurons

    DEFF Research Database (Denmark)

    Hounsgaard, J.; Kiehn, O.

    1985-01-01

    The plateau potential, responsible for the bistable state of spinal motoneurons, recently described in the decerebrate cat, was suggested to depend on serotonin (Hounsgaard et al. 1984). In an in vitro preparation of the spinal cord of the turtle we now show that serotonin, applied directly...... to the bath, transforms the intrinsic response properties of motoneurons, uncovering a plateau potential and voltage sensitive bistability. The changes induced by serotonin were blocked by Mn++, while the plateau potential and the bistability remained after application of tetrodotoxin. We conclude...... that serotonin controls the expression of a Ca++ dependent plateau potential in motoneurons....

  17. Method and apparatus for bistable optical information storage for erasable optical disks

    Science.gov (United States)

    Land, Cecil E.; McKinney, Ira D.

    1990-01-01

    A method and an optical device for bistable storage of optical information, together with reading and erasure of the optical information, using a photoactivated shift in a field dependent phase transition between a metastable or a bias-stabilized ferroelectric (FE) phase and a stable antiferroelectric (AFE) phase in an lead lanthanum zirconate titanate (PLZT). An optical disk contains the PLZT. Writing and erasing of optical information can be accomplished by a light beam normal to the disk. Reading of optical information can be accomplished by a light beam at an incidence angle of 15 to 60 degrees to the normal of the disk.

  18. Bistable responses in bacterial genetic networks: Designs and dynamical consequences

    Science.gov (United States)

    Tiwari, Abhinav; Ray, J. Christian J.; Narula, Jatin; Igoshin, Oleg A.

    2011-01-01

    A key property of living cells is their ability to react to stimuli with specific biochemical responses. These responses can be understood through the dynamics of underlying biochemical and genetic networks. Evolutionary design principles have been well studied in networks that display graded responses, with a continuous relationship between input signal and system output. Alternatively, biochemical networks can exhibit bistable responses so that over a range of signals the network possesses two stable steady states. In this review, we discuss several conceptual examples illustrating network designs that can result in a bistable response of the biochemical network. Next, we examine manifestations of these designs in bacterial master-regulatory genetic circuits. In particular, we discuss mechanisms and dynamic consequences of bistability in three circuits: two-component systems, sigma-factor networks, and a multistep phosphorelay. Analyzing these examples allows us to expand our knowledge of evolutionary design principles for networks with bistable responses. PMID:21385588

  19. Bistable luminescence of trivalent rare-earth ions in crystals

    International Nuclear Information System (INIS)

    Sole, Jose Garcia; Ramirez O, Maria de la; Rodenas, Airan; Jaque, Daniel; Bausa, Luisa; Bettinelli, Marco; Speghini, Adolfo; Cavalli, Enrico; Ivleva, Lioudmila

    2006-01-01

    In this work, we have examined three new bistable systems based on the luminescence of three different crystals activated with trivalent rare earth ions. We have focussed our attention on Yb 3+ ions activators, for which the most relevant results are obtained. The first crystal, Sr 0.6 Ba 0.4 Nb 2 O 6 , is a ferroelectric material with a relatively low phase transition temperature (∼370 K), which provides bistability in the luminescence of Yb 3+ ions due to the thermal hysteresis associated with phase transition. The second crystal, LiNbO 3 , provides an intrinsic bistability in the luminescence of Yb 3+ ions, which is driven by changes in the excitation intensity. In the third crystal, NdPO 4 , a new mechanism of excitation intensity driven bistability is obtained when activated with Yb 3+ ions, due to a interplay between the Nd 3+ ↔Yb 3+ energy transfer and back transfer processes

  20. Bifurcation of transition paths induced by coupled bistable systems.

    Science.gov (United States)

    Tian, Chengzhe; Mitarai, Namiko

    2016-06-07

    We discuss the transition paths in a coupled bistable system consisting of interacting multiple identical bistable motifs. We propose a simple model of coupled bistable gene circuits as an example and show that its transition paths are bifurcating. We then derive a criterion to predict the bifurcation of transition paths in a generalized coupled bistable system. We confirm the validity of the theory for the example system by numerical simulation. We also demonstrate in the example system that, if the steady states of individual gene circuits are not changed by the coupling, the bifurcation pattern is not dependent on the number of gene circuits. We further show that the transition rate exponentially decreases with the number of gene circuits when the transition path does not bifurcate, while a bifurcation facilitates the transition by lowering the quasi-potential energy barrier.

  1. Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

    Science.gov (United States)

    Raeis-Hosseini, Niloufar; Rho, Junsuk

    2017-01-01

    Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

  2. Spectroscopic and Theoretical Identification of Two Thermal Isomerization Pathways for Bistable Chiral Overcrowded Alkenes.

    Science.gov (United States)

    Kistemaker, Jos C M; Pizzolato, Stefano F; van Leeuwen, Thomas; Pijper, Thomas C; Feringa, Ben L

    2016-09-12

    Chiroptical molecular switches play an important role in responsive materials and dynamic molecular systems. Here we present the synthesis of four chiral overcrowded alkenes and the experimental and computational study of their photochemical and thermal behavior. By irradiation with UV light, metastable diastereoisomers with opposite helicity were generated through high yielding E-Z isomerizations. Kinetic studies on metastable 1-4 using CD spectroscopy and HPLC analysis revealed two pathways at higher temperatures for the thermal isomerization, namely a thermal E-Z isomerization (TEZI) and a thermal helix inversion (THI). These processes were also studied computationally whereby a new strategy was developed for calculating the TEZI barrier for second-generation overcrowded alkenes. To demonstrate that these overcrowded alkenes can be employed as bistable switches, photochromic cycling was performed, which showed that the alkenes display good selectivity and fatigue resistance over multiple irradiation cycles. In particular, switch 3 displayed the best performance in forward and backward photoswitching, while 1 excelled in thermal stability of the photogenerated metastable form. Overall, the alkenes studied showed a remarkable and unprecedented combination of switching properties including dynamic helicity, reversibility, selectivity, fatigue resistance, and thermal stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Interaction of multiarmed spirals in bistable media.

    Science.gov (United States)

    He, Ya-feng; Ai, Bao-quan; Liu, Fu-cheng

    2013-05-01

    We study the interaction of both dense and sparse multiarmed spirals in bistable media modeled by equations of the FitzHugh-Nagumo type. A dense one-armed spiral is characterized by its fixed tip. For dense multiarmed spirals, when the initial distance between tips is less than a critical value, the arms collide, connect, and disconnect continuously as the spirals rotate. The continuous reconstruction between the front and the back drives the tips to corotate along a rough circle and to meander zigzaggedly. The rotation frequency of tip, the frequency of zigzagged displacement, the frequency of spiral, the oscillation frequency of media, and the number of arms satisfy certain relations as long as the control parameters of the model are fixed. When the initial distance between tips is larger than the critical value, the behaviors of individual arms within either dense or sparse multiarmed spirals are identical to that of corresponding one-armed spirals.

  4. Lattice stretching bistability and dynamic heterogeneity

    DEFF Research Database (Denmark)

    Christiansen, Peter Leth; Savin, A. V.; Zolotaryuk, A. V.

    2012-01-01

    A simple one-dimensional lattice model is suggested to describe the experimentally observed plateau in force-stretching diagrams for some macromolecules. This chain model involves the nearest-neighbor interaction of a Morse-like potential (required to have a saturation branch) and a harmonic second......-neighbor coupling. Under an external stretching applied to the chain ends, the intersite Morse-like potential results in the appearance of a double-well potential within each chain monomer, whereas the interaction between the second neighbors provides a homogeneous bistable (degenerate) ground state, at least...... stretched bonds with a double-well potential. This case allows us to explain the existence of a plateau in the force-extension diagram for DNA and α-helix protein. Finally, the soliton dynamics are studied in detail....

  5. Cops or Robbers — a Bistable Society

    Science.gov (United States)

    Kułakowski, K.

    The norm game described by Axelrod in 1985 was recently treated with the master equation formalism. Here we discuss the equations, where (i) those who break the norm cannot punish and those who punish cannot break the norm, (ii) the tendency to punish is suppressed if the majority breaks the norm. The second mechanism is new. For some values of the parameters the solution shows the saddle-point bifurcation. Then, two stable solutions are possible, where the majority breaks the norm or the majority punishes. This means, that the norm breaking can be discontinuous, when measured in the social scale. The bistable character is reproduced also with new computer simulations on the Erdös-Rényi directed network.

  6. The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device

    International Nuclear Information System (INIS)

    Liu Zi-Yu; Zhang Pei-Jian; Meng Yang; Li Dong; Meng Qing-Yu; Li Jian-Qi; Zhao Hong-Wu

    2012-01-01

    The I—V characteristics of In 2 O 3 :SnO 2 /TiO 2 /In 2 O 3 :SnO 2 junctions with different interfacial barriers are investigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Asymmetric Effects on Escape Rates of Bistable System

    International Nuclear Information System (INIS)

    Wang Canjun; Mei Dongcheng; Dai Zucheng

    2011-01-01

    The asymmetric effects on the escape rates from the stable states x ± in the bistable system are analyzed. The results indicate that the multiplicative noise and the additive noise always enhance the particle escape from stable states x ± of bistable. However, the asymmetric parameter r enhances the particle escape from stable state x + , and holds back the particle escape from stable state x - . (general)

  8. Analytic descriptions of stochastic bistable systems under force ramp.

    Science.gov (United States)

    Friddle, Raymond W

    2016-05-01

    Solving the two-state master equation with time-dependent rates, the ubiquitous driven bistable system, is a long-standing problem that does not permit a complete solution for all driving rates. Here we show an accurate approximation to this problem by considering the system in the control parameter regime. The results are immediately applicable to a diverse range of bistable systems including single-molecule mechanics.

  9. Synthesizing a novel genetic sequential logic circuit: a push-on push-off switch.

    Science.gov (United States)

    Lou, Chunbo; Liu, Xili; Ni, Ming; Huang, Yiqi; Huang, Qiushi; Huang, Longwen; Jiang, Lingli; Lu, Dan; Wang, Mingcong; Liu, Chang; Chen, Daizhuo; Chen, Chongyi; Chen, Xiaoyue; Yang, Le; Ma, Haisu; Chen, Jianguo; Ouyang, Qi

    2010-01-01

    Design and synthesis of basic functional circuits are the fundamental tasks of synthetic biologists. Before it is possible to engineer higher-order genetic networks that can perform complex functions, a toolkit of basic devices must be developed. Among those devices, sequential logic circuits are expected to be the foundation of the genetic information-processing systems. In this study, we report the design and construction of a genetic sequential logic circuit in Escherichia coli. It can generate different outputs in response to the same input signal on the basis of its internal state, and 'memorize' the output. The circuit is composed of two parts: (1) a bistable switch memory module and (2) a double-repressed promoter NOR gate module. The two modules were individually rationally designed, and they were coupled together by fine-tuning the interconnecting parts through directed evolution. After fine-tuning, the circuit could be repeatedly, alternatively triggered by the same input signal; it functions as a push-on push-off switch.

  10. Does visual attention drive the dynamics of bistable perception?

    Science.gov (United States)

    Dieter, Kevin C; Brascamp, Jan; Tadin, Duje; Blake, Randolph

    2016-10-01

    How does attention interact with incoming sensory information to determine what we perceive? One domain in which this question has received serious consideration is that of bistable perception: a captivating class of phenomena that involves fluctuating visual experience in the face of physically unchanging sensory input. Here, some investigations have yielded support for the idea that attention alone determines what is seen, while others have implicated entirely attention-independent processes in driving alternations during bistable perception. We review the body of literature addressing this divide and conclude that in fact both sides are correct-depending on the form of bistable perception being considered. Converging evidence suggests that visual attention is required for alternations in the type of bistable perception called binocular rivalry, while alternations during other types of bistable perception appear to continue without requiring attention. We discuss some implications of this differential effect of attention for our understanding of the mechanisms underlying bistable perception, and examine how these mechanisms operate during our everyday visual experiences.

  11. The stochastic behavior of a molecular switching circuit with feedback

    Directory of Open Access Journals (Sweden)

    Smith Eric

    2007-05-01

    Full Text Available Abstract Background Using a statistical physics approach, we study the stochastic switching behavior of a model circuit of multisite phosphorylation and dephosphorylation with feedback. The circuit consists of a kinase and phosphatase acting on multiple sites of a substrate that, contingent on its modification state, catalyzes its own phosphorylation and, in a symmetric scenario, dephosphorylation. The symmetric case is viewed as a cartoon of conflicting feedback that could result from antagonistic pathways impinging on the state of a shared component. Results Multisite phosphorylation is sufficient for bistable behavior under feedback even when catalysis is linear in substrate concentration, which is the case we consider. We compute the phase diagram, fluctuation spectrum and large-deviation properties related to switch memory within a statistical mechanics framework. Bistability occurs as either a first-order or second-order non-equilibrium phase transition, depending on the network symmetries and the ratio of phosphatase to kinase numbers. In the second-order case, the circuit never leaves the bistable regime upon increasing the number of substrate molecules at constant kinase to phosphatase ratio. Conclusion The number of substrate molecules is a key parameter controlling both the onset of the bistable regime, fluctuation intensity, and the residence time in a switched state. The relevance of the concept of memory depends on the degree of switch symmetry, as memory presupposes information to be remembered, which is highest for equal residence times in the switched states. Reviewers This article was reviewed by Artem Novozhilov (nominated by Eugene Koonin, Sergei Maslov, and Ned Wingreen.

  12. Decision making in noisy bistable systems with time-dependent asymmetry

    Science.gov (United States)

    Nené, Nuno R.; Zaikin, Alexey

    2013-01-01

    Our work draws special attention to the importance of the effects of time-dependent parameters on decision making in bistable systems. Here, we extend previous studies of the mechanism known as speed-dependent cellular decision making in genetic circuits by performing an analytical treatment of the canonical supercritical pitchfork bifurcation problem with an additional time-dependent asymmetry and control parameter. This model has an analogous behavior to the genetic switch. In the presence of transient asymmetries and fluctuations, slow passage through the critical region in both systems increases substantially the probability of specific decision outcomes. We also study the relevance for attractor selection of reaching maximum values for the external asymmetry before and after the critical region. Overall, maximum asymmetries should be reached at an instant where the position of the critical point allows for compensation of the detrimental effects of noise in retaining memory of the transient asymmetries.

  13. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  14. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  15. A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (high efficiency and high power density...... are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high......-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power...

  16. Electrical bistability in conductive hybrid composites of doped polyaniline nanofibers-gold nanoparticles capped with dodecane thiol.

    Science.gov (United States)

    Borriello, A; Agoretti, P; Cassinese, A; D'Angelo, P; Mohanraj, G T; Sanguigno, L

    2009-11-01

    A novel electrical bistable hybrid nanocomposite based on doped Polyaniline nanofibers with 1-Dodecanethiol-protected Gold nanoparticle (PAni.AuDT), 3-4 nm in size, as the conductive component and polystyrene as polymer matrix was prepared. The structural morphology of the composite and the dispersion of nanoparticles inside it were evaluated using Transmission Electron Microscopy (TEM). The thermal stability and the ratio Polyaniline/Gold nanoparticles in the composite were determined by using thermogravimetric analysis. The electrical bistability of the PAni.AuDT-PS composite, the influence of the dispersion of the PAni.AuDT conductive network and the basic operation mechanism, have been assessed by measuring the electrical response of planar device architectures, also as a function of the environmental temperature (in the range 200 K K). The basic operation mechanism of the hybrid compound has been then correlated to the combined action of the thermally-induced scattering of charge carriers and the thermal contraction of the hosting polymeric matrix. Moreover, the right compromise between these two effects in terms of the most efficient bistability has been studied, founding the concentration of the conductive component which optimizes the device on-off ratio (I(on)/ I(off)).

  17. Bistable energy harvesting enhancement with an auxiliary linear oscillator

    Science.gov (United States)

    Harne, R. L.; Thota, M.; Wang, K. W.

    2013-12-01

    Recent work has indicated that linear vibrational energy harvesters with an appended degree-of-freedom (DOF) may be advantageous for introducing new dynamic forms to extend the operational bandwidth. Given the additional interest in bistable harvester designs, which exhibit a propitious snap through effect from one stable state to the other, it is a logical extension to explore the influence of an added DOF to a bistable system. However, bistable snap through is not a resonant phenomenon, which tempers the presumption that the dynamics induced by an additional DOF on bistable designs would inherently be beneficial as for linear systems. This paper presents two analytical formulations to assess the fundamental and superharmonic steady-state dynamics of an excited bistable energy harvester to which is attached an auxiliary linear oscillator. From an energy harvesting perspective, the model predicts that the additional linear DOF uniformly amplifies the bistable harvester response magnitude and generated power for excitation frequencies less than the attachment’s resonance while improved power density spans a bandwidth below this frequency. Analyses predict bandwidths having co-existent responses composed of a unique proportion of fundamental and superharmonic dynamics. Experiments validate key analytical predictions and observe the ability for the coupled system to develop an advantageous multi-harmonic interwell response when the initial conditions are insufficient for continuous high-energy orbit at the excitation frequency. Overall, the addition of an auxiliary linear oscillator to a bistable harvester is found to be an effective means of enhancing the energy harvesting performance and robustness.

  18. Interaction of bistable glass-coated microwires in different positional relationship

    Energy Technology Data Exchange (ETDEWEB)

    Rodionova, V., E-mail: rodionova@magn.ru [Magnetism Department, Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Kudinov, N. [Magnetism Department, Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Zhukov, A. [Departamento Fisica de Materiales, Facultad Quimicas, UPV/EHU, 20018 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Perov, N. [Magnetism Department, Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow (Russian Federation)

    2012-05-01

    The amorphous ferromagnetic glass-coated microwires with positive magnetostriction constant of the metallic core possess the bistable magnetization reversal and the fast domain wall propagation along the microwire axis. These properties and also the magnetization processes in the systems of the microwires are of interest in the magnetic sensing technology, encoding systems and smart composite applications. In this work we present the results of the experimental investigation, simulations and theoretical estimations of the hysteresis process in the systems of the magnetically bistable microwires with different length and positional relationship between them. The location of the short microwires near the long microwire affects the switching fields (external coaxial magnetic field applied for starting of the domain wall propagation along the microwire axis) and the hysteresis process. The changes of these properties are not directly proportional to the value of the shorter microwire shift along the longer one. When the short microwire was placed in the middle of the long one and when the one end of the long microwire coincided with the end of the short one, the two-steps hysteresis loops were observed for both sample orientations: before and after sample rotation on 180 Degree-Sign . When the short microwire was placed close to the end of the long microwire (but did not coincide with it) we observed at first the two-steps hysteresis loop and single step behavior for one branch of the hysteresis loop after sample rotation. Moreover, changing of the orientation of the samples results in the shift of the switching field of the shorter microwire when its end was located near the end or coincided with the end of the longer one. This uncommon hysteresis behavior was explained and illustrated using results of the simulations. The values of microwires interaction were also estimated.

  19. Interaction of bistable glass-coated microwires in different positional relationship

    International Nuclear Information System (INIS)

    Rodionova, V.; Kudinov, N.; Zhukov, A.; Perov, N.

    2012-01-01

    The amorphous ferromagnetic glass-coated microwires with positive magnetostriction constant of the metallic core possess the bistable magnetization reversal and the fast domain wall propagation along the microwire axis. These properties and also the magnetization processes in the systems of the microwires are of interest in the magnetic sensing technology, encoding systems and smart composite applications. In this work we present the results of the experimental investigation, simulations and theoretical estimations of the hysteresis process in the systems of the magnetically bistable microwires with different length and positional relationship between them. The location of the short microwires near the long microwire affects the switching fields (external coaxial magnetic field applied for starting of the domain wall propagation along the microwire axis) and the hysteresis process. The changes of these properties are not directly proportional to the value of the shorter microwire shift along the longer one. When the short microwire was placed in the middle of the long one and when the one end of the long microwire coincided with the end of the short one, the two-steps hysteresis loops were observed for both sample orientations: before and after sample rotation on 180°. When the short microwire was placed close to the end of the long microwire (but did not coincide with it) we observed at first the two-steps hysteresis loop and single step behavior for one branch of the hysteresis loop after sample rotation. Moreover, changing of the orientation of the samples results in the shift of the switching field of the shorter microwire when its end was located near the end or coincided with the end of the longer one. This uncommon hysteresis behavior was explained and illustrated using results of the simulations. The values of microwires interaction were also estimated.

  20. Pivotal role of hMT+ in long-range disambiguation of interhemispheric bistable surface motion.

    Science.gov (United States)

    Duarte, João Valente; Costa, Gabriel Nascimento; Martins, Ricardo; Castelo-Branco, Miguel

    2017-10-01

    It remains an open question whether long-range disambiguation of ambiguous surface motion can be achieved in early visual cortex or instead in higher level regions, which concerns object/surface segmentation/integration mechanisms. We used a bistable moving stimulus that can be perceived as a pattern comprehending both visual hemi-fields moving coherently downward or as two widely segregated nonoverlapping component objects (in each visual hemi-field) moving separately inward. This paradigm requires long-range integration across the vertical meridian leading to interhemispheric binding. Our fMRI study (n = 30) revealed a close relation between activity in hMT+ and perceptual switches involving interhemispheric segregation/integration of motion signals, crucially under nonlocal conditions where components do not overlap and belong to distinct hemispheres. Higher signal changes were found in hMT+ in response to spatially segregated component (incoherent) percepts than to pattern (coherent) percepts. This did not occur in early visual cortex, unlike apparent motion, which does not entail surface segmentation. We also identified a role for top-down mechanisms in state transitions. Deconvolution analysis of switch-related changes revealed prefrontal, insula, and cingulate areas, with the right superior parietal lobule (SPL) being particularly involved. We observed that directed influences could emerge either from left or right hMT+ during bistable motion integration/segregation. SPL also exhibited significant directed functional connectivity with hMT+, during perceptual state maintenance (Granger causality analysis). Our results suggest that long-range interhemispheric binding of ambiguous motion representations mainly reflect bottom-up processes from hMT+ during perceptual state maintenance. In contrast, state transitions maybe influenced by high-level regions such as the SPL. Hum Brain Mapp 38:4882-4897, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley

  1. Key Players in the Genetic Switch of Bacteriophage TP901-1

    DEFF Research Database (Denmark)

    Alsing, Anne; Pedersen, Margit; Sneppen, Kim

    2011-01-01

    the bistable genetic switch of bacteriophage TP901-1 through experiments and statistical mechanical modeling. We examine the activity of the lysogenic promoter Pr at different concentrations of the phage repressor, CI, and compare the effect of CI on Pr in the presence or absence of the phage-encoded MOR...

  2. An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

    Science.gov (United States)

    Aldana, S.; Roldán, J. B.; García-Fernández, P.; Suñe, J.; Romero-Zaliz, R.; Jiménez-Molinos, F.; Long, S.; Gómez-Campos, F.; Liu, M.

    2018-04-01

    A simulation tool based on a 3D kinetic Monte Carlo algorithm has been employed to analyse bipolar conductive bridge RAMs fabricated with Cu/HfOx/Pt stacks. Resistive switching mechanisms are described accounting for the electric field and temperature distributions within the dielectric. The formation and destruction of conductive filaments (CFs) are analysed taking into consideration redox reactions and the joint action of metal ion thermal diffusion and electric field induced drift. Filamentary conduction is considered when different percolation paths are formed in addition to other conventional transport mechanisms in dielectrics. The simulator was tuned by using the experimental data for Cu/HfOx/Pt bipolar devices that were fabricated. Our simulation tool allows for the study of different experimental results, in particular, the current variations due to the electric field changes between the filament tip and the electrode in the High Resistance State. In addition, the density of metallic atoms within the CF can also be characterized along with the corresponding CF resistance description.

  3. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

    Energy Technology Data Exchange (ETDEWEB)

    Matveyev, Yu.; Zenkevich, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation); NRNU “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Egorov, K.; Markeev, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

    2015-01-28

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  4. Bistable behaviour of biexciton population in a dense exciton-biexciton system in semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An.

    1986-05-01

    The steady state bistable behaviour of biexciton population in a dense exciton-biexciton semiconductor is considered. The intrinsic optical feedback is provided by the recombination mechanism. The exciton-biexciton and biexciton-biexciton interactions play the role of non-linearity responsible for biexciton bistability to occur. The conditions leading to the effect of bistability are obtained and two-parameter phase transition diagrams are drawn for both intensity and frequency bistable phenomena. (author)

  5. Optical bistability induced by quantum coherence in a negative index atomic medium

    International Nuclear Information System (INIS)

    Zhang Hong-Jun; Sun Hui; Li Jin-Ping; Yin Bao-Yin; Guo Hong-Ju

    2013-01-01

    Bistability behaviors in an optical ring cavity filled with a dense V-type four-level atomic medium are theoretically investigated. It is found that the optical bistability can appear in the negative refraction frequency band, while both the bistability and multi-stability can occur in the positive refraction frequency bands. Therefore, optical bistability can be realized from conventional material to negative index material due to quantum coherence in our scheme. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  6. Evaluation of bistable systems versus matched filters in detecting bipolar pulse signals

    OpenAIRE

    Duan, Fabing; Abbott, Derek; Gao, Qisheng

    2004-01-01

    This paper presents a thorough evaluation of a bistable system versus a matched filter in detecting bipolar pulse signals. The detectability of the bistable system can be optimized by adding noise, i.e. the stochastic resonance (SR) phenomenon. This SR effect is also demonstrated by approximate statistical detection theory of the bistable system and corresponding numerical simulations. Furthermore, the performance comparison results between the bistable system and the matched filter show that...

  7. Negative differential electrolyte resistance in a solid-state nanopore resulting from electroosmotic flow bistability.

    Science.gov (United States)

    Luo, Long; Holden, Deric A; White, Henry S

    2014-03-25

    A solid-state nanopore separating two aqueous solutions containing different concentrations of KCl is demonstrated to exhibit negative differential resistance (NDR) when a constant pressure is applied across the nanopore. NDR refers to a decrease in electrical current when the voltage applied across the nanopore is increased. NDR results from the interdependence of solution flow (electroosmotic and pressure-engendered) with the distributions of K+ and Cl- within the nanopore. A switch from a high-conductivity state to a low-conductivity state occurs over a very narrow voltage window (flow, yielding a true bistability in fluid flow and electrical current at a critical applied voltage, i.e., the NDR "switching potential". Solution pH and Ca2+ were separately employed as chemical stimuli to investigate the dependence of the NDR on the surface charge density. The NDR switching potential is remarkably sensitive to the surface charge density, and thus to pH and the presence of Ca2+, suggesting possible applications in chemical sensing.

  8. Quinonoid metal complexes: toward molecular switches.

    Science.gov (United States)

    Dei, Andrea; Gatteschi, Dante; Sangregorio, Claudio; Sorace, Lorenzo

    2004-11-01

    The peculiar redox-active character of quinonoid metal complexes makes them extremely appealing to design materials of potential technological interest. We show here how the tuning of the properties of these systems can be pursued by using appropriate molecular synthetic techniques. In particular, we focus our attention on metal polyoxolene complexes exhibiting intramolecular electron transfer processes involving either the ligand and the metal ion or the two dioxolene moieties of a properly designed ligand thus inducing electronic bistability. The transition between the two metastable electronic states can be induced by different external stimuli such as temperature, pressure, light, or pH suggesting the use of these systems for molecular switches.

  9. Bistability of mangrove forests and competition with freshwater plants

    Science.gov (United States)

    Jiang, Jiang; Fuller, Douglas O; Teh, Su Yean; Zhai, Lu; Koh, Hock Lye; DeAngelis, Donald L.; Sternberg, L.D.S.L.

    2015-01-01

    Halophytic communities such as mangrove forests and buttonwood hammocks tend to border freshwater plant communities as sharp ecotones. Most studies attribute this purely to underlying physical templates, such as groundwater salinity gradients caused by tidal flux and topography. However, a few recent studies hypothesize that self-reinforcing feedback between vegetation and vadose zone salinity are also involved and create a bistable situation in which either halophytic dominated habitat or freshwater plant communities may dominate as alternative stable states. Here, we revisit the bistability hypothesis and demonstrate the mechanisms that result in bistability. We demonstrate with remote sensing imagery the sharp boundaries between freshwater hardwood hammock communities in southern Florida and halophytic communities such as buttonwood hammocks and mangroves. We further document from the literature how transpiration of mangroves and freshwater plants respond differently to vadose zone salinity, thus altering the salinity through feedback. Using mathematical models, we show how the self-reinforcing feedback, together with physical template, controls the ecotones between halophytic and freshwater communities. Regions of bistability along environmental gradients of salinity have the potential for large-scale vegetation shifts following pulse disturbances such as hurricane tidal surges in Florida, or tsunamis in other regions. The size of the region of bistability can be large for low-lying coastal habitat due to the saline water table, which extends inland due to salinity intrusion. We suggest coupling ecological and hydrologic processes as a framework for future studies.

  10. Fundamental role of bistability in optimal homeostatic control

    Science.gov (United States)

    Wang, Guanyu

    2013-03-01

    Bistability is a fundamental phenomenon in nature and has a number of fine properties. However, these properties are consequences of bistability at the physiological level, which do not explain why it had to emerge during evolution. Using optimal homeostasis as the first principle and Pontryagin's Maximum Principle as the optimization approach, I find that bistability emerges as an indispensable control mechanism. Because the mathematical model is general and the result is independent of parameters, it is likely that most biological systems use bistability to control homeostasis. Glucose homeostasis represents a good example. It turns out that bistability is the only solution to a dilemma in glucose homeostasis: high insulin efficiency is required for rapid plasma glucose clearance, whereas an insulin sparing state is required to guarantee the brain's safety during fasting. This new perspective can illuminate studies on the twin epidemics of obesity and diabetes and the corresponding intervening strategies. For example, overnutrition and sedentary lifestyle may represent sudden environmental changes that cause the lose of optimality, which may contribute to the marked rise of obesity and diabetes in our generation.

  11. Dynamic control of a bistable wing under aerodynamic loading

    International Nuclear Information System (INIS)

    Bilgen, Onur; Arrieta, Andres F; Friswell, Michael I; Hagedorn, Peter

    2013-01-01

    The aerodynamic evaluation of a dynamic control technique applied to a bistable unsymmetrical cross-ply composite plate with surface bonded piezoelectric actuators is presented. The plate is clamped on one end to form a low-aspect-ratio wing. A previously proposed dynamic control method, utilizing bending resonance in different stable equilibrium positions, is used to induce snap-through between the two equilibrium states. Compared to quasi-static actuation, driving the bistable plate near resonance using surface bonded piezoelectric materials requires, theoretically, a lower peak excitation voltage to achieve snap-through. First, a set of extensive wind tunnel experiments are conducted on the passive bistable wing to understand the change in the dynamic behavior under various aerodynamic conditions. The passive wing demonstrated sufficient bending stiffness to sustain its shape under aerodynamic loading while preserving the desired bistable behavior. Next, by the use of the resonant control technique, the plate is turned into an effectively monostable structure, or alternatively, both stable equilibrium positions can be reached actively from the other stable equilibrium. Dynamic forward and reverse snap-through is demonstrated in the wind tunnel which shows both the effectiveness of the piezoelectric actuation as well as the load carrying capability of both states of the bistable wing. (paper)

  12. Oscillations in the bistable regime of neuronal networks.

    Science.gov (United States)

    Roxin, Alex; Compte, Albert

    2016-07-01

    Bistability between attracting fixed points in neuronal networks has been hypothesized to underlie persistent activity observed in several cortical areas during working memory tasks. In network models this kind of bistability arises due to strong recurrent excitation, sufficient to generate a state of high activity created in a saddle-node (SN) bifurcation. On the other hand, canonical network models of excitatory and inhibitory neurons (E-I networks) robustly produce oscillatory states via a Hopf (H) bifurcation due to the E-I loop. This mechanism for generating oscillations has been invoked to explain the emergence of brain rhythms in the β to γ bands. Although both bistability and oscillatory activity have been intensively studied in network models, there has not been much focus on the coincidence of the two. Here we show that when oscillations emerge in E-I networks in the bistable regime, their phenomenology can be explained to a large extent by considering coincident SN and H bifurcations, known as a codimension two Takens-Bogdanov bifurcation. In particular, we find that such oscillations are not composed of a stable limit cycle, but rather are due to noise-driven oscillatory fluctuations. Furthermore, oscillations in the bistable regime can, in principle, have arbitrarily low frequency.

  13. Non-resonant energy harvesting via an adaptive bistable potential

    International Nuclear Information System (INIS)

    Hosseinloo, Ashkan Haji; Turitsyn, Konstantin

    2016-01-01

    Narrow bandwidth and easy detuning, inefficiency in broadband and non-stationary excitations, and difficulties in matching a linear harvester’s resonance frequency to low-frequency excitations at small scales, have convinced researchers to investigate nonlinear, and in particular bistable, energy harvesters in recent years. However, bistable harvesters suffer from co-existing low and high energy orbits, and sensitivity to initial conditions, and have recently been proven inefficient when subjected to many real-world random and non-stationary excitations. Here, we propose a novel non-resonant buy-low-sell-high strategy that can significantly improve the harvester’s effectiveness at low frequencies in a much more robust fashion. This strategy could be realized by a passive adaptive bistable system. Simulation results confirm the high effectiveness of the adaptive bistable system following a buy-low-sell-high logic when subjected to harmonic and random non-stationary walking excitations compared to its conventional bistable and linear counterparts. (paper)

  14. Frontoparietal cortex mediates perceptual transitions in bistable perception.

    Science.gov (United States)

    Weilnhammer, Veith A; Ludwig, Karin; Hesselmann, Guido; Sterzer, Philipp

    2013-10-02

    During bistable vision, perception oscillates between two mutually exclusive percepts despite constant sensory input. Greater BOLD responses in frontoparietal cortex have been shown to be associated with endogenous perceptual transitions compared with "replay" transitions designed to closely match bistability in both perceptual quality and timing. It has remained controversial, however, whether this enhanced activity reflects causal influences of these regions on processing at the sensory level or, alternatively, an effect of stimulus differences that result in, for example, longer durations of perceptual transitions in bistable perception compared with replay conditions. Using a rotating Lissajous figure in an fMRI experiment on 15 human participants, we controlled for potential confounds of differences in transition duration and confirmed previous findings of greater activity in frontoparietal areas for transitions during bistable perception. In addition, we applied dynamic causal modeling to identify the neural model that best explains the observed BOLD signals in terms of effective connectivity. We found that enhanced activity for perceptual transitions is associated with a modulation of top-down connectivity from frontal to visual cortex, thus arguing for a crucial role of frontoparietal cortex in perceptual transitions during bistable perception.

  15. Numerical and experimental study of bistable plates for morphing structures

    Science.gov (United States)

    Nicassio, F.; Scarselli, G.; Avanzini, G.; Del Core, G.

    2017-04-01

    This study is concerned with the activation energy threshold of bistable composite plates in order to tailor a bistable system for specific aeronautical applications. The aim is to explore potential configurations of the bistable plates and their dynamic behavior for designing novel morphing structure suitable for aerodynamic surfaces and, as a possible further application, for power harvesters. Bistable laminates have two stable mechanical shapes that can withstand aerodynamic loads without additional constraint forces or locking mechanisms. This kind of structures, when properly loaded, snap-through from one stable configuration to another, causing large strains that can also be used for power harvesting scopes. The transition between the stable states of the composite laminate can be triggered, in principle, simply by aerodynamic loads (pilot, disturbance or passive inputs) without the need of servo-activated control systems. Both numerical simulations based on Finite Element models and experimental testing based on different activating forcing spectra are used to validate this concept. The results show that dynamic activation of bistable plates depend on different parameters that need to be carefully managed for their use as aircraft passive wing flaps.

  16. Noise-induced polarization switching in complex networks

    Science.gov (United States)

    Haerter, Jan O.; Díaz-Guilera, Albert; Serrano, M. Ángeles

    2017-04-01

    The combination of bistability and noise is ubiquitous in complex systems, from biology to social interactions, and has important implications for their functioning and resilience. Here we use a simple three-state dynamical process, in which nodes go from one pole to another through an intermediate state, to show that noise can induce polarization switching in bistable systems if dynamical correlations are significant. In large, fully connected networks, where dynamical correlations can be neglected, increasing noise yields a collapse of bistability to an unpolarized configuration where the three possible states of the nodes are equally likely. In contrast, increased noise induces abrupt and irreversible polarization switching in sparsely connected networks. In multiplexes, where each layer can have a different polarization tendency, one layer is dominant and progressively imposes its polarization state on the other, offsetting or promoting the ability of noise to switch its polarization. Overall, we show that the interplay of noise and dynamical correlations can yield discontinuous transitions between extremes, which cannot be explained by a simple mean-field description.

  17. Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

    Science.gov (United States)

    Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

    2018-01-01

    In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

  18. Optical Bistability in Graded Core-Shell Granular Composites

    International Nuclear Information System (INIS)

    Wu Ya-Min; Chen Guo-Qing; Xue Si-Zhong; Zhu Zhuo-Wei; Ma Chao-Qun

    2012-01-01

    The intrinsic optical bistability (OB) of graded core-shell granular composites is investigated. The coated particles are made of cores with gradient dielectric function in c (r) = A(r/a) k and nonlinear shells. In view of the exponential distribution of the core dielectric constant, the potential functions of each region are obtained by solving the Maxwell equations, and the mathematical expressions of electric field in the shells and cores are determined. Numerical study reveals that the optical bistable threshold and the threshold width of the composite medium are dependent on the shell thickness, core dielectric exponent, and power function coefficient. The optical bistable width increases with the decreasing shell thickness and the power exponent and with the increasing power function coefficient

  19. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  20. All-optical header recognizer for optical packet switched networks : exploiting nonlinear gain and index dynamics in semiconductor optical amplifiers for low power operation and photonic integration device

    NARCIS (Netherlands)

    Calabretta, N.; Dorren, H.J.S.

    2009-01-01

    The increase of the internet traffic leads to future optical networks requiring tens of Tb/s of capacity. Current electronic circuit switches are limited by the scalability of the electronic switching fabrics, power consumption and dissipation in the opto- electronic conversion. All-optical packet

  1. Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

    International Nuclear Information System (INIS)

    Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

    1992-07-01

    The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

  2. An Optically Driven Bistable Janus Rotor with Patterned Metal Coatings.

    Science.gov (United States)

    Zong, Yiwu; Liu, Jing; Liu, Rui; Guo, Honglian; Yang, Mingcheng; Li, Zhiyuan; Chen, Ke

    2015-11-24

    Bistable rotation is realized for a gold-coated Janus colloidal particle in an infrared optical trap. The metal coating on the Janus particles are patterned by sputtering gold on a monolayer of closely packed polystyrene particles. The Janus particle is observed to stably rotate in an optical trap. Both the direction and the rate of rotation can be experimentally controlled. Numerical calculations reveal that the bistable rotation is the result of spontaneous symmetry breaking induced by the uneven curvature of the coating patterns on the Janus sphere. Our results thus provide a simple method to construct large quantities of fully functional rotary motors for nano- or microdevices.

  3. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  4. The Necker-Zeno model for bistable perception.

    Science.gov (United States)

    Atmanspacher, Harald; Filk, Thomas

    2013-10-01

    A novel conceptual framework for theoretical psychology is presented and illustrated for the example of bistable perception. A basic formal feature of this framework is the non-commutativity of operations acting on mental states. A corresponding model for the bistable perception of ambiguous stimuli, the Necker-Zeno model, is sketched and some empirical evidence for it so far is described. It is discussed how a temporal non-locality of mental states, predicted by the model, can be understood and tested. © 2013 Cognitive Science Society, Inc.

  5. THE DENSITY DISTRIBUTION IN TURBULENT BISTABLE FLOWS

    International Nuclear Information System (INIS)

    Gazol, Adriana; Kim, Jongsoo

    2013-01-01

    We numerically study the volume density probability distribution function (n-PDF) and the column density probability distribution function (Σ-PDF) resulting from thermally bistable turbulent flows. We analyze three-dimensional hydrodynamic models in periodic boxes of 100 pc by side, where turbulence is driven in the Fourier space at a wavenumber corresponding to 50 pc. At low densities (n ∼ –3 ), the n-PDF is well described by a lognormal distribution for an average local Mach number ranging from ∼0.2 to ∼5.5. As a consequence of the nonlinear development of thermal instability (TI), the logarithmic variance of the distribution of the diffuse gas increases with M faster than in the well-known isothermal case. The average local Mach number for the dense gas (n ∼> 7.1 cm –3 ) goes from ∼1.1 to ∼16.9 and the shape of the high-density zone of the n-PDF changes from a power law at low Mach numbers to a lognormal at high M values. In the latter case, the width of the distribution is smaller than in the isothermal case and grows slower with M. At high column densities, the Σ-PDF is well described by a lognormal for all of the Mach numbers we consider and, due to the presence of TI, the width of the distribution is systematically larger than in the isothermal case but follows a qualitatively similar behavior as M increases. Although a relationship between the width of the distribution and M can be found for each one of the cases mentioned above, these relations are different from those of the isothermal case.

  6. Energy losses in switches

    International Nuclear Information System (INIS)

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-01-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

  7. Alpha Power Predicts Persistence of Bistable Perception

    NARCIS (Netherlands)

    Piantoni, Giovanni; Romeijn, Nico; Gomez-Herrero, German; Van Der Werf, Ysbrand D; Van Someren, Eus J W

    2017-01-01

    Perception is strongly affected by the intrinsic state of the brain, which controls the propensity to either maintain a particular perceptual interpretation or switch to another. To understand the mechanisms underlying the spontaneous drive of the brain to explore alternative interpretations of

  8. Bistable flow spectral analysis. Repercussions on jet pumps

    International Nuclear Information System (INIS)

    Gavilan Moreno, C.J.

    2011-01-01

    Highlights: → The most important thing in this paper, is the spectral characterization of the bistable flow in a Nuclear Power Plant. → This paper goes deeper in the effect of the bistable flow over the jet pump and the induced vibrations. → The jet pump frequencies are very close to natural jet pump frequencies, in the 3rd and 6th mode. - Abstract: There have been many attempts at characterizing and predicting bistable flow in boiling water reactors (BWRs). Nevertheless, in most cases the results have only managed to develop models that analytically reproduce the phenomenon (). Modeling has been forensic in all cases, while the capacity of the model focus on determining the exclusion areas on the recirculation flow map. The bistability process is known by its effects given there is no clear definition of its causal process. In the 1980s, Hitachi technicians () managed to reproduce bistable flow in the laboratory by means of pipe geometry, similar to that which is found in recirculation loops. The result was that the low flow pattern is formed by the appearance of a quasi stationary, helicoidal vortex in the recirculation collector's branches. This vortex creates greater frictional losses than regions without vortices, at the same discharge pressure. Neither the behavior nor the dynamics of these vortices were characterized in this paper. The aim of this paper is to characterize these vortices in such a way as to enable them to provide their own frequencies and their later effect on the jet pumps. The methodology used in this study is similar to the one used previously when analyzing the bistable flow in tube arrays with cross flow (). The method employed makes use of the power spectral density function. What differs is the field of application. We will analyze a Loop B with a bistable flow and compare the high and low flow situations. The same analysis will also be carried out on the loop that has not developed the bistable flow (Loop A) at the same moments

  9. Two optical bistability domains in composites of metal nanoparticles with nonlinear dielectric core

    Energy Technology Data Exchange (ETDEWEB)

    Shewamare, Sisay, E-mail: sisayshewa20@yahoo.com [Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa (Ethiopia); Mal' nev, V.N., E-mail: vadimnmalnev@yahoo.com [Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa (Ethiopia)

    2012-12-15

    It is shown that the local field in metal spherical particles with a dielectric core in an external varying electric field has two maxima at two different frequencies. The second maximum becomes more important with an increment in the metal fraction. Due to the nonlinear dielectric function of the core, the composite of these inclusions may have two optically induced bistability domains at different frequencies. At rather high metal fraction, two bistability domains merge and form one entire bistability domain. The parameters of these domains are studied numerically. The paper focuses on the second bistability domain, which has not been discussed in the literature so far. This domain exists in a comparatively narrow frequency range and its onset fields are lower than those of the first bistability domain. The lowest bistability onset fields are obtained in the entire domain. This peculiarity of the optical induced bistability in the metal composite with small dielectric cores can be attractive for possible applications.

  10. Two optical bistability domains in composites of metal nanoparticles with nonlinear dielectric core

    International Nuclear Information System (INIS)

    Shewamare, Sisay; Mal'nev, V.N.

    2012-01-01

    It is shown that the local field in metal spherical particles with a dielectric core in an external varying electric field has two maxima at two different frequencies. The second maximum becomes more important with an increment in the metal fraction. Due to the nonlinear dielectric function of the core, the composite of these inclusions may have two optically induced bistability domains at different frequencies. At rather high metal fraction, two bistability domains merge and form one entire bistability domain. The parameters of these domains are studied numerically. The paper focuses on the second bistability domain, which has not been discussed in the literature so far. This domain exists in a comparatively narrow frequency range and its onset fields are lower than those of the first bistability domain. The lowest bistability onset fields are obtained in the entire domain. This peculiarity of the optical induced bistability in the metal composite with small dielectric cores can be attractive for possible applications.

  11. Composite Material Switches

    Science.gov (United States)

    Javadi, Hamid (Inventor)

    2002-01-01

    A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

  12. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  13. Robust network topologies for generating switch-like cellular responses.

    Directory of Open Access Journals (Sweden)

    Najaf A Shah

    2011-06-01

    Full Text Available Signaling networks that convert graded stimuli into binary, all-or-none cellular responses are critical in processes ranging from cell-cycle control to lineage commitment. To exhaustively enumerate topologies that exhibit this switch-like behavior, we simulated all possible two- and three-component networks on random parameter sets, and assessed the resulting response profiles for both steepness (ultrasensitivity and extent of memory (bistability. Simulations were used to study purely enzymatic networks, purely transcriptional networks, and hybrid enzymatic/transcriptional networks, and the topologies in each class were rank ordered by parametric robustness (i.e., the percentage of applied parameter sets exhibiting ultrasensitivity or bistability. Results reveal that the distribution of network robustness is highly skewed, with the most robust topologies clustering into a small number of motifs. Hybrid networks are the most robust in generating ultrasensitivity (up to 28% and bistability (up to 18%; strikingly, a purely transcriptional framework is the most fragile in generating either ultrasensitive (up to 3% or bistable (up to 1% responses. The disparity in robustness among the network classes is due in part to zero-order ultrasensitivity, an enzyme-specific phenomenon, which repeatedly emerges as a particularly robust mechanism for generating nonlinearity and can act as a building block for switch-like responses. We also highlight experimentally studied examples of topologies enabling switching behavior, in both native and synthetic systems, that rank highly in our simulations. This unbiased approach for identifying topologies capable of a given response may be useful in discovering new natural motifs and in designing robust synthetic gene networks.

  14. The Octopus switch

    NARCIS (Netherlands)

    Havinga, Paul J.M.

    2000-01-01

    This chapter1 discusses the interconnection architecture of the Mobile Digital Companion. The approach to build a low-power handheld multimedia computer presented here is to have autonomous, reconfigurable modules such as network, video and audio devices, interconnected by a switch rather than by a

  15. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  16. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    electron-vibration coupling in transport through single moleculesKatharina J Franke and Jose Ignacio Pascual Vibrational heating in single-molecule switches: an energy-dependent density-of-states approachT Brumme, R Gutierrez and G Cuniberti Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surfaceC Nacci, K Kanisawa and S Fölsch Tuning the interaction between carbon nanotubes and dipole switches: the influence of the change of the nanotube-spiropyran distanceP Bluemmel, A Setaro, C Maity, S Hecht and S Reich Carbon nanotubes as substrates for molecular spiropyran-based switchesE Malic, A Setaro, P Bluemmel, Carlos F Sanz-Navarro, Pablo Ordejón, S Reich and A Knorr Ultrafast dynamics of dithienylethenes differently linked to the surface of TiO2 nanoparticlesLars Dworak, Marc Zastrow, Gehad Zeyat, Karola Rück-Braun and Josef Wachtveitl Switching the electronic properties of Co-octaethylporphyrin molecules on oxygen-covered Ni films by NO adsorptionC F Hermanns, M Bernien, A Krüger, J Miguel and W Kuch STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)K Zenichowski, Ch Nacci, S Fölsch, J Dokić, T Klamroth and P Saalfrank A switch based on self-assembled thymineFatih Kalkan, Michael Mehlhorn and Karina Morgenstern The growth and electronic structure of azobenzene-based functional molecules on layered crystalsJ Iwicki, E Ludwig, J Buck, M Kalläne, F Köhler, R Herges, L Kipp and K Rossnagel Voltage-dependent conductance states of a single-molecule junctionY F Wang, N Néel, J Kröger, H Vázquez, M Brandbyge, B Wang and R Berndt Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulationJohannes Mielke, Sofia Selvanathan, Maike Peters, Jutta Schwarz, Stefan Hecht and Leonhard Grill Preparing and regulating a bi-stable molecular switch by atomic manipulationS Sakulsermsuk, R E Palmer and P A Sloan Mixed self

  17. Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

    Science.gov (United States)

    Gubicza, Agnes; Csontos, Miklós; Halbritter, András; Mihály, György

    2015-03-14

    The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

  18. Multistable decision switches for flexible control of epigenetic differentiation.

    Directory of Open Access Journals (Sweden)

    Raúl Guantes

    2008-11-01

    Full Text Available It is now recognized that molecular circuits with positive feedback can induce two different gene expression states (bistability under the very same cellular conditions. Whether, and how, cells make use of the coexistence of a larger number of stable states (multistability is however largely unknown. Here, we first examine how autoregulation, a common attribute of genetic master regulators, facilitates multistability in two-component circuits. A systematic exploration of these modules' parameter space reveals two classes of molecular switches, involving transitions in bistable (progression switches or multistable (decision switches regimes. We demonstrate the potential of decision switches for multifaceted stimulus processing, including strength, duration, and flexible discrimination. These tasks enhance response specificity, help to store short-term memories of recent signaling events, stabilize transient gene expression, and enable stochastic fate commitment. The relevance of these circuits is further supported by biological data, because we find them in numerous developmental scenarios. Indeed, many of the presented information-processing features of decision switches could ultimately demonstrate a more flexible control of epigenetic differentiation.

  19. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  20. Pattern formation in the bistable Gray-Scott model

    DEFF Research Database (Denmark)

    Mazin, W.; Rasmussen, K.E.; Mosekilde, Erik

    1996-01-01

    The paper presents a computer simulation study of a variety of far-from-equilibrium phenomena that can arise in a bistable chemical reaction-diffusion system which also displays Turing and Hopf instabilities. The Turing bifurcation curve and the wave number for the patterns of maximum linear grow...