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Sample records for bismuth telluride nanowires

  1. About thermo-electric properties of bismuth telluride doped by gadolinium

    International Nuclear Information System (INIS)

    Akperov, M.M.; Ismailov, Sh.S.; Shukyurova, A.A.

    2004-01-01

    Results of study of the Gd impurities effect on the bismuth telluride thermo-electric properties are presented. The experiment was carried out within the temperature range T=300-700 K. It is determined, that at temperature increase the energy level is appreciably closing up to bismuth telluride forbidden zone which makes up 0.16-0.24 eV. Such anomalous energy properties of gadolinium in telluride affect on material thermoelectric properties

  2. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  3. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  4. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  5. Doping of germanium telluride with bismuth tellurides

    International Nuclear Information System (INIS)

    Abrikosov, N.Kh.; Karpinskij, O.G.; Makalatiya, T.Sh.; Shelimova, L.E.

    1981-01-01

    Effect of germanium telluride doping with bismuth fellurides (Bi 2 Te 3 ; BiTe; Bi 2 Te) on phase transition temperature, lattice parameters and electrophysical properties of alloys is studied. It is shown that in alloys of GeTe-Bi 2 Te 3 (BiTe)(Bi 2 Te) cross sections solid solution of GeTe with Bi 2 Te 3 , characterized by deviation from stoichiometry, and germanium in the second phase the quantity of which increases during the transition from GeTe-Bi 2 Te 3 cross section to GeTe-Bi 2 Te are in equilibrium. Lower values of holes concentration and of electric conductivity and higher values of thermo e.m.f. coefficient in comparison with alloys of GeTe-Bi 2 Te 3 cross section with the same bismuth content are characterized for GeTe-Bi 2 Te cross section alloys. It is shown that in the range of GeTe-base solid solution the α→γ phase transformation which runs trough the two-phase region (α→γ) is observed with tellurium content increase. Extension of α-phase existence region widens with the bismuth content increase. Peculiarities of interatomic interaction in GeTe-base solid solutions with isovalent and heterovalent cation substitution are considered [ru

  6. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey; Peterson, Rebecca Lorenz; Hussain, Muhammad Mustafa; Najafi, Khalil

    2013-01-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning

  7. Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

    Science.gov (United States)

    Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

    2014-10-01

    Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

  8. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  9. Growth and characterization of bismuth telluride nanowires

    International Nuclear Information System (INIS)

    Picht, Oliver

    2010-01-01

    Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  10. Feasibility of preparing patterned molybdenum coatings on bismuth telluride thermoelectric modules.

    Energy Technology Data Exchange (ETDEWEB)

    Sarobol, Pylin; Hall, Aaron Christopher; Miller, Stephen Samuel; Knight, Marlene E.; LePage, William S.; Sobczak, Catherine Elizabeth.; Wesolowski, Daniel Edward

    2013-09-01

    Molybdenum electrical interconnects for thermoelectric modules were produced by air plasma spraying a 30%CE%BCm size molybdenum powder through a laser-cut Kapton tape mask. Initial feasibility demonstrations showed that the molybdenum coating exhibited excellent feature and spacing retention (~170%CE%BCm), adhered to bismuth-telluride, and exhibited electrical conductivity appropriate for use as a thermoelectric module interconnect. A design of experiments approach was used to optimize air plasma spray process conditions to produce a molybdenum coating with low electrical resistivity. Finally, a molybdenum coating was successfully produced on a fullscale thermoelectric module. After the addition of a final titanium/gold layer deposited on top of the molybdenum coating, the full scale module exhibited an electrical resistivity of 128%CE%A9, approaching the theoretical resistivity value for the 6mm module leg of 112%CE%A9. Importantly, air plasma sprayed molybdenum did not show significant chemical reaction with bismuth-telluride substrate at the coating/substrate interface. The molybdenum coating microstructure consisted of lamellar splats containing columnar grains. Air plasma sprayed molybdenum embedded deeply (several microns) into the bismuth-telluride substrate, leading to good adhesion between the coating and the substrate. Clusters of round pores (and cracks radiating from the pores) were found immediately beneath the molybdenum coating. These pores are believed to result from tellurium vaporization during the spray process where the molten molybdenum droplets (2623%C2%B0C) transferred their heat of solidification to the substrate at the moment of impact. Substrate cooling during the molybdenum deposition process was recommended to mitigate tellurium vaporization in future studies.

  11. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  12. Theoretical study of bismuth-doped cadmium telluride

    Science.gov (United States)

    Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

    Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

  13. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    Science.gov (United States)

    Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-12-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

  14. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    International Nuclear Information System (INIS)

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-01-01

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  15. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  16. Magneto-photoconductivity of three dimensional topological insulator bismuth telluride

    Science.gov (United States)

    Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

    2018-03-01

    Magnetic field dependence of the photocurrent in a 3D topological insulator is studied. Among the 3D topological insulators bismuth telluride has unique hexagonal warping and spin texture which has been studied by photoemission, scanning tunnelling microscopy and transport. Here, we report on low temperature magneto-photoconductivity, up to 7 T, of two metallic bismuth telluride topological insulator samples with 68 and 110 nm thicknesses excited by 2.33 eV photon energy along the magnetic field perpendicular to the sample plane. At 4 K, both samples exhibit negative magneto-photoconductance below 4 T, which is as a result of weak-antilocalization of Dirac fermions similar to the previous observations in electrical transport. However the thinner sample shows positive magneto-photoconductance above 4 T. This can be attributed to the coupling of surface states. On the other hand, the thicker sample shows no positive magneto-photoconductance up to 7 T since there is only one surface state at play. By fitting the magneto-photoconductivity data of the thicker sample to the localization formula, we obtain weak antilocalization behaviour at 4, 10, and 20 K, as expected; however, weak localization behaviour at 30 K, which is a sign of surface states masked by bulk states. Also, from the temperature dependence of phase coherence length bulk carrier-carrier interaction is identified separately from the surface states. Therefore, it is possible to distinguish surface states by magneto-photoconductivity at low temperature, even in metallic samples.

  17. Strain effect on the heat transport properties of bismuth telluride nanofilms with a hole

    Science.gov (United States)

    Fang, Te-Hua; Chang, Win-Jin; Wang, Kuan-Yu; Huang, Chao-Chun

    2018-06-01

    We investigated the mechanical behavior of bismuth telluride nanofilms with holes by using an equilibrium molecular dynamics (MD) approach. The holes had diameters of 20, 30, 40, and 50 Å. The thermal conductivity values of the nanofilms were calculated under different strains at different temperatures using a nonequilibrium MD simulation. The simulation revealed that the thermal conductivity of a bismuth telluride nanofilm with a hole decreases with an increase in hole diameter at different strains. For a film with a perfect structure at 300 K, a 48% reduction (from 0.33 to 0.17 W/m K) in the thermal conductivity was observed at a 7% tensile strain. In addition, the thermal conductivity increased by approximately 39% (from 0.33 to 0.46 W/m K) at a 7% compressive strain. A very low value (0.11 W/m K) of thermal conductivity is obtained for the nanofilm with a hole diameter of 50 Å at a 7% tensile strain at 300 K.

  18. Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

    International Nuclear Information System (INIS)

    Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

    1994-01-01

    Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

  19. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

    International Nuclear Information System (INIS)

    Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

    2016-01-01

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  20. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  1. Structure impact on the thermal and electronic properties of bismuth telluride by ab-initio and molecular dynamics calculations

    International Nuclear Information System (INIS)

    Termentzidis, K; Pokropivny, A; Xiong, S-Y; Chumakov, Y; Volz, S; Woda, M; Cortona, P

    2012-01-01

    We use molecular dynamics and ab-initio methods to predict the thermal and electronic properties of new materials with high figures of merit. The simulated systems are bulk bismuth tellurides with antisite and vacancy defects. Optimizations of the materials under investigation are performed by the SIESTA code for subsequent calculations of force constants, electronic properties, and Seebeck coefficients. The prediction of the thermal conductivity is made by Non-Equilibrium Molecular Dynamics (NEMD) using the LAMMPS code. The thermal conductivity of bulk bismuth telluride with different stoichiometry and with a number of substitution defects is calculated. We have found that the thermal conductivity can be decreased by 60% by introducing vacancy defects. The calculated thermal conductivities for the different structures are compared with the available experimental and theoretical results.

  2. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi{sub 2}Te{sub 3}) single crystals for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, Anuj [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Singh, Budhendra [TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro (Portugal); Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Maurya, K.K. [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2016-03-07

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi{sub 2}Te{sub 3}) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  3. Solution processed bismuth sulfide nanowire array core/silver shuffle shell solar cells

    NARCIS (Netherlands)

    Cao, Y.; Bernechea, M.; Maclachlan, A.; Zardetto, V.; Creatore, M.; Haque, S.A.; Konstantatos, G.

    2015-01-01

    Low bandgap inorganic semiconductor nanowires have served as building blocks in solution processed solar cells to improve their power conversion capacity and reduce fabrication cost. In this work, we first reported bismuth sulfide nanowire arrays grown from colloidal seeds on a transparent

  4. Superconducting Properties of Lead-Bismuth Films Controlled by Ferromagnetic Nanowire Arrays

    Science.gov (United States)

    Ye, Zuxin; Lyuksyutov, Igor F.; Wu, Wenhao; Naugle, Donald G.

    2011-03-01

    Superconducting properties of lead-bismuth (82% Pb and 18% Bi) alloy films deposited on ferromagnetic nanowire arrays have been investigated. Ferromagnetic Co or Ni nanowires are first electroplated into the columnar pores of anodic aluminum oxide (AAO) membranes. Superconducting Pb 82 Bi 18 films are then quench-condensed onto the polished surface of the AAO membranes filled with magnetic nanowires. A strong dependence of the Pb 82 Bi 18 superconducting properties on the ratio of the superconducting film thickness to the magnetic nanowire diameter and the material variety was observed.

  5. The study of the sample size on the transverse magnetoresistance of bismuth nanowires

    International Nuclear Information System (INIS)

    Zare, M.; Layeghnejad, R.; Sadeghi, E.

    2012-01-01

    The effects of sample size on the galvanomagnetice properties of semimetal nanowires are theoretically investigated. Transverse magnetoresistance (TMR) ratios have been calculated within a Boltzmann Transport Equation (BTE) approach by specular reflection approximation. Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. The obtained values are in good agreement with the experimental results, reported by Heremans et al. - Highlights: ► In this study effects of sample size on the galvanomagnetic properties of Bi. ► Nanowires were explained by Parrott theorem by solving the Boltzmann Transport Equation. ► Transverse magnetoresistance (TMR) ratios have been measured by specular reflection approximation. ► Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. ► The obtained values are in good agreement with the experimental results, reported by Heremans et al.

  6. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    International Nuclear Information System (INIS)

    Ganguly, Shreyashi; Zhou Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-01-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2−x Sb x Te 3 ) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2−x Sb x Te 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties. - Graphical abstract: PbTe nanoparticles introduced into p-type Bi 2 Te 3 by incipient wetness results in decreased lattice thermal conductivity, but also acts as an electronic dopant, resulting in an overall decrease in thermoelectric performance. Highlights: ► Composites of PbTe nanoparticles in Bi 2−x Sb x Te 3 were formed by incipient wetness. ► PbTe nanoparticles leads to decreased κ l , consistent with phonon scattering. ► PbTe nanoparticles lead to decreased S and ρ, due to increased carriers. ► Collateral doping from PbTe leads to decreased ZT with increasing concentration. ► Immiscible systems are preferred for improved ZT.

  7. A simple fast microwave-assisted synthesis of thermoelectric bismuth telluride nanoparticles from homogeneous reaction-mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Susmita [Jadavpur University, Department of Instrumentation Science (India); Das, Rashmita [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Bhar, Radhaballabh [Jadavpur University, Department of Instrumentation Science (India); Bandyopadhyay, Rajib [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Pramanik, Panchanan, E-mail: pramanik1946@gmail.com [GLA University, Department of Chemistry and Nanoscience (India)

    2017-02-15

    A new simple chemical method for synthesis of nanocrystalline bismuth telluride (Bi{sub 2}Te{sub 3}) has been developed by microwave assisted reduction of homogeneous tartrate complexes of bismuth and tellurium metal ions with hydrazine. The reaction is performed at pH 10. The nano-crystallites have rhombohedral phase identified by XRD. The size distribution of nanoparticle is narrow and it ranges between 50 to 70 nm. FESEM shows that the fine powders are composed of small crystallites. The TEM micrographs show mostly deformed spherical particles and the lattice fringes are found to be 0.137 nm. Energy dispersive X-ray spectroscopy (EDX) analysis shows the atomic composition ratio between bismuth and tellurium is 2:3. Thermoelectric properties of the materials are studied after sintering by spark plasma sintering method (SPS). The grain size of the material after sintering is in the nanometer range. The material shows enhanced Seebeck coefficient and electrical conductivity value at 300 K. The figure of merit is found to be 1.18 at 300 K.

  8. Bismuth alloying properties in GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lu [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Cao, Huawei; Cai, Ningning; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  9. Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

    Science.gov (United States)

    Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

    2018-04-01

    The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

  10. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    International Nuclear Information System (INIS)

    Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

    2016-01-01

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  11. Ballistic edge states in Bismuth nanowires revealed by SQUID interferometry.

    Science.gov (United States)

    Murani, Anil; Kasumov, Alik; Sengupta, Shamashis; Kasumov, Yu A; Volkov, V T; Khodos, I I; Brisset, F; Delagrange, Raphaëlle; Chepelianskii, Alexei; Deblock, Richard; Bouchiat, Hélène; Guéron, Sophie

    2017-07-05

    The protection against backscattering provided by topology is a striking property. In two-dimensional insulators, a consequence of this topological protection is the ballistic nature of the one-dimensional helical edge states. One demonstration of ballisticity is the quantized Hall conductance. Here we provide another demonstration of ballistic transport, in the way the edge states carry a supercurrent. The system we have investigated is a micrometre-long monocrystalline bismuth nanowire with topological surfaces, that we connect to two superconducting electrodes. We have measured the relation between the Josephson current flowing through the nanowire and the superconducting phase difference at its ends, the current-phase relation. The sharp sawtooth-shaped phase-modulated current-phase relation we find demonstrates that transport occurs selectively along two ballistic edges of the nanowire. In addition, we show that a magnetic field induces 0-π transitions and ϕ 0 -junction behaviour, providing a way to manipulate the phase of the supercurrent-carrying edge states and generate spin supercurrents.

  12. Acetic acid-confined synthesis of uniform three-dimensional (3D) bismuth telluride nanocrystals consisting of few-quintuple-layer nanoplatelets

    KAUST Repository

    Yuan, Qiang; Radar, Kelly; Hussain, Muhammad Mustafa

    2011-01-01

    High-selectivity, uniform three-dimensional (3D) flower-like bismuth telluride (Bi2Te3) nanocrystals consisting of few-quintuple-layer nanoplatelets with a thickness down to 4.5 nm were synthesized for the first time by a facile, one-pot polyol method with acetic acid as the structure-director. Micrometre-sized 2D films and honeycomb-like spheres can be obtained using the uniform 3D Bi2Te3 nanocrystals as building blocks. © The Royal Society of Chemistry 2011.

  13. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  14. An additive approach to low temperature zero pressure sintering of bismuth antimony telluride thermoelectric materials

    Science.gov (United States)

    Catlin, Glenn C.; Tripathi, Rajesh; Nunes, Geoffrey; Lynch, Philip B.; Jones, Howard D.; Schmitt, Devin C.

    2017-03-01

    This paper presents an additive-based approach to the formulation of thermoelectric materials suitable for screen printing. Such printing processes are a likely route to such thermoelectric applications as micro-generators for wireless sensor networks and medical devices, but require the development of materials that can be sintered at ambient pressure and low temperatures. Using a rapid screening process, we identify the eutectic combination of antimony and tellurium as an additive for bismuth-antimony-telluride that enables good thermoelectric performance without a high pressure step. An optimized composite of 15 weight percent Sb7.5Te92.5 in Bi0.5Sb1.5Te3 is scaled up and formulated into a screen-printable paste. Samples fabricated from this paste achieve a thermoelectric figure of merit (ZT) of 0.74 using a maximum processing temperature of 748 K and a total thermal processing budget of 12 K-hours.

  15. High-temperature thermoelectric behavior of lead telluride

    Indian Academy of Sciences (India)

    The central problem in thermoelectric material research is the selection of ... temperature range (400–1000 K), and bismuth telluride-based materials .... parent from the results that band non-parabolicity has a significant effect on the .... M P Singh thankfully acknowledges financial assistance from the Council of Scien-.

  16. Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity

    International Nuclear Information System (INIS)

    Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan

    2016-01-01

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4  S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  17. The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

    Science.gov (United States)

    Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

    2016-02-01

    We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

  18. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    International Nuclear Information System (INIS)

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

    2014-01-01

    Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  19. Effect of the interface on the mechanical properties and thermal conductivity of bismuth telluride films

    Science.gov (United States)

    Lai, Tang-Yu; Wang, Kuan-Yu; Fang, Te-Hua; Huang, Chao-Chun

    2018-02-01

    Bismuth telluride (Bi2Te3) is a type of thermoelectric material used for energy generation that does not cause pollution. Increasing the thermoelectric conversion efficiency (ZT) is one of the most important steps in the development of thermoelectric components. In this study, we use molecular dynamics to investigate the mechanical properties and thermal conductivity of quintuple layers of Bi2Te3 nanofilms with different atomic arrangements at the interface and study the effects of varying layers, angles, and grain boundaries. The results indicate that the Bi2Te3 nanofilm perfect substrate has the ideal Young’s modulus and thermal conductivity, and the maximum yield stress is observed for a thickness of ∼90 Å. As the interface changed, the structural disorder of atomic arrangement affected the mechanical properties; moreover, the phonons encounter lattice disordered atomic region will produce scattering reduce heat conduction. The results of this investigation are helpful for the application of Bi2Te3 nanofilms as thermoelectric materials.

  20. Templated growth of cadmium zinc telluride (CZT) nanowires using pulsed-potentials in hot non-aqueous solution

    International Nuclear Information System (INIS)

    Gandhi, T.; Raja, K.S.; Misra, M.

    2006-01-01

    A single step non-aqueous electrodeposition of cadmium zinc telluride (CZT) nanowires on nanoporous TiO 2 substrate was investigated under pulsed-potential conditions. Propylene carbonate was used as the non-aqueous medium. Cyclic voltammogram studies were carried out to understand the growth mechanism of CZT. EDAX and XRD measurements indicated formation of a compound semiconductor with a stoichiometry of Cd 1-x Zn x Te, where x varied between 0.04 and 0.2. Variation of the pulsed-cathodic potentials could modulate the composition of the CZT. More negative cathodic potentials resulted in increased Zn content. The nanowires showed an electronic band gap of about 1.6 eV. Mott-Schottky analyses indicated p-type semiconductor properties of both as-deposited and annealed CZT materials. Increase in Zn content increased the charge carrier density. Annealing of the deposits resulted in lower charge carrier densities, in the order of 10 15 cm -3

  1. Geometric effects on surface states in topological insulator Bi2Te3 nanowire

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

    2012-02-01

    Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

  2. Electrodeposition of textured Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires with enhanced electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)

    2016-04-15

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  3. Semimetal-semiconductor transitions in bismuth-antimony films and nanowires induced by size quantization

    International Nuclear Information System (INIS)

    Nikolaeva, A.A.; Konopko, L.A.; Grabov, V.M.; Komarov, V.A.; Kablukova, N.; Popov, I.A.

    2013-01-01

    Full text:Single-crystal bismuth films and nanowires undergo a transformation from semimetal to semiconductor (SMSC) thanks to the manifestation of quantum size effects, which modify phonon transport, which may be of practical interest. This effect must be most pronounced in single Bi 1-x Sb x nanostructures in the semimetal phase(x < 0.04) with a minimal overlapping of L and T bands. In this paper we present the experimental results an investigation of the low- temperature electrical transport, thermoelectrical properties, SdH oscillations of BiSb films, grown by vacuum thermal evaporation and nanowires prepared by a modified Ulitovsky - Teilor technique. We confirmed with X-ray diffraction that the trigonal axis were perpendicular to the film plane. The single Bi-2at% Sb nanowires with diameter 100-1000nm were represented single crystals in glass capillary with (1011) orientation along the wire axis. The investigations the Shubnikov de Haas oscillations shows, that overlapping L and-T- bands was in two time smaller, than in pure Bi. The quantum dimensional effect induced SMSC transition is observed in Bi-Sb films and nanowires at the wires diameters up to five times greater, than in pure Bi. That experimental fact on the one site will be allow to go at higher temperatures with the same diameters nanowires, and on the other hand allows to separate effects connected with surface state and QSE. We also discuss the thermoelectric properties for optimizing their performance for certain, such as thermoelectrics.

  4. Effect of reducing agent strength on the growth and thermoelectric performance of nanocrystalline bismuth telluride

    Science.gov (United States)

    Nour, Asmaa; Hassan, Nazly; Refaat, Heba M.; Soliman, Hesham M. A.; El-Dissouky, A.

    2018-03-01

    A novel combination of Trizma, as an environmentally friendly chelating agent, with either weak or strong reducing agent was used to produce n-type bismuth telluride (Bi2Te3) nanocrystals via water-based chemical route. The synthesized powders were consolidated into pellets utilizing spark plasma sintering (SPS). The sintered n-type pellets exhibited potentially high electrical conductivities (5.29 × 105 and 5.23 × 105 S.m‑1) and low lattice thermal conductivities (0.12 and 0.25 Wm‑1K‑1) respectively. These thermoelectric (TE) properties suggested that the partially coherent boundaries permitted significant phonons scattering and electrons transfer. These led to an enhanced figure-of-merit (ZT) values (0.52 and 0.97), which are considered to be significant among the reported ZT values at room-temperature for the undoped synthesized n-type Bi2Te3 nanoparticles. Therefore, the current investigation displayed an efficient method to improve ZT of TE materials via nanostructure orchestrating, resulting in a worthy candidate n-type nanostructured Bi2Te3 for room-temperature TE applications.

  5. Synthesis, characterization and enhanced thermoelectric performance of structurally ordered cable-like novel polyaniline–bismuth telluride nanocomposite

    International Nuclear Information System (INIS)

    Chatterjee, Krishanu; Mitra, Mousumi; Banerjee, Dipali; Kargupta, Kajari; Ganguly, Saibal

    2013-01-01

    Bismuth telluride (Bi 2 Te 3 ) nanorods and polyaniline (PANI) nanoparticles have been synthesized by employing solvothermal and chemical oxidative processes, respectively. Nanocomposites, comprising structurally ordered PANI preferentially grown along the surface of a Bi 2 Te 3 nanorods template, are synthesized using in situ polymerization. X-ray powder diffraction, UV–vis and Raman spectral analysis confirm the highly ordered chain structure of PANI on Bi 2 Te 3 nanorods, leading to a higher extent of doping, higher chain mobility and enhancement of the thermoelectric performance. Above 380 K, the PANI–Bi 2 Te 3 nanocomposite with a core–shell/cable-like structure exhibits a higher thermoelectric power factor than either pure PANI or Bi 2 Te 3 . At room temperature the thermal conductivity of the composite is lower than that of its pure constituents, due to selective phonon scattering by the nanointerfaces designed in the PANI–Bi 2 Te 3 nanocable structures. The figure of merit of the nanocomposite at room temperature is comparable to the values reported in the literature for bulk polymer-based composite thermoelectric materials. (paper)

  6. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  8. Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

    2015-03-25

    Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

  9. Bismuth-silver mineralization in the Sergozerskoe gold occurrence

    Directory of Open Access Journals (Sweden)

    Kalinin A. A.

    2017-03-01

    Full Text Available Bismuth-silver mineralization attendant to gold mineralization in the Sergozerskoe gold occurrence has been studied in detail. Bi-Ag mineralization is connected with diorite porphyry dykes, which cut volcanic-sedimentary Lopian complexes of the Strel'ninsky greenstone belt – hornblendite and actinolite-chlorite amphibolites, biotite and bi-micaceous gneisses. Distribution of Bi-Ag mineralization similar to gold mineralization is controlled by 80 m thick zone of silicification. Bi minerals are found in brecciated diorite porphyry. Bismuth-silver mineralization includes native metals (bismuth, electrum, silver, tellurides (hedleyite, hessite, selenides (ikunolite, sulfides and sulfosalts of Bi and Ag (matildite, lillianite, eckerite, jalpaite, prustite, acanthite, a few undiagnosed minerals. All Bi and Ag minerals associate with galena. Composition of mineralization evolved from early to late stages of development, depending on intensity of rock alteration. The earliest Bi-Ag minerals were native bismuth and hedleyite formed dissemination in galena, and electrum with 30-45 mass.% Au. Later native bismuth was partly substituted by silver and bismuth sulfosalts and bismuth sulfides. The latest minerals were low-temperature silver sulfides eckerite, jalpaite, and acanthite, which were noted only in the most intensively altered rocks. As soon as the process of formation of Bi-Ag mineralization is the same as formation of gold, findings of bismuth-silver mineralization can serve as a positive exploration sign for gold in the region.

  10. Recrystallized arrays of bismuth nanowires with trigonal orientation.

    Science.gov (United States)

    Limmer, Steven J; Yelton, W Graham; Erickson, Kristopher J; Medlin, Douglas L; Siegal, Michael P

    2014-01-01

    We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.

  11. Irradiation-induced doping of Bismuth Telluride Bi2Te3

    International Nuclear Information System (INIS)

    Rischau, Carl Willem

    2014-01-01

    Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

  12. Synthesis and characterization of titanium oxide/bismuth sulfide nanorods for solar cells applications

    International Nuclear Information System (INIS)

    Solis, M.; Rincon, M. E.

    2008-01-01

    In the present work is showed the synthesis and characterization of titanium oxide/bismuth sulfide nanowires hetero-junctions for solar cells applications. Conductive glass substrates (Corning 25 x 75 mm) were coated with a thin layer of sol-gel TiO2 and used as substrates for the subsequent deposition of bismuth sulfide nanorods (BN). TiO2 films (∼400 nm) were deposited with a semiautomatic immersion system with controlled immersion/withdraw velocity, using titanium isopropoxide as the titania precursor [1]. For BN synthesis and deposition, the solvo-thermal method was used, introducing air annealed TiO2-substrates in the autoclave. The typical bilayer TiO2/BN hetero-junction was 600 nm thick. The synthesized materials (powders and films) were characterized by X-Ray Diffraction, Scanning Electron Microscopy, and UV-Visible Spectroscopy. Anatase was the crystalline phase of TiO2, while bismuth sulfide nanotubes show a diffraction pattern characteristic of bismuthinite distorted by the preferential growth of some planes [2-4]. The optoelectronic characterization of TiO2/NB hetero-junctions was compared with hetero-junctions obtained by sensitizing TiO2 with chemically deposited bismuth sulfide films. Bismuth sulfide nanowires are 2µm long and 70nm wide (aspect ratio L/D = 43), while chemically deposited bismuth sulfide have L/D = 1, therefore the effect of particle size evaluation and geometry in the photosensitization phenomena will be discussed in the context of new materials for solar-cells applications. (Full text)

  13. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Yamaguchi, Masashi [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  14. Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

    International Nuclear Information System (INIS)

    Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

    2014-01-01

    Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

  15. Localization and Related Phenomena in Multiply Connected Nanostructured Inverse Opal Bismuth

    Science.gov (United States)

    Bleiweiss, Michael; Saygi, Salih; Amirzadeh, Jafar; Datta, Timir; Lungu, Anca; Yin, Ming; Palm, Eric; Brandt, Bruce; Iqbal, Zafar

    2001-03-01

    The nanostructures were fabricated by pressure infiltration of bismuth into porous artificial opal and were characterized using SEM, EDX and XRD. These structures form a regular three-dimensional network in which the bismuth regions percolate in all directions between the close packed spheres of SiO_2. The sizes of the conducting regions are of the order of tens of nanometers. The static magnetic properties of both bismuth inverse opal and bulk bismuth were studied using a SQUID magnetometer. Transport measurements, including Hall, were done using standard ac four and six probe techniques in fields up to 17 T* and temperatures between 4.2 and 150 K. The results of these measurements, including the observation of localization phenomena, will be discussed. Comparisons will be made with published results on bismuth nanowires. *Performed at the National High Magnetic Field Lab (NHMFL) FSU, Tallahassee, FL. Partially supported by a grant from NASA.

  16. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

    Science.gov (United States)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-27

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al 2 O 3 ) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al 2 O 3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al 2 O 3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al 2 O 3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  17. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    Science.gov (United States)

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-08

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

  18. Enhancing Thermoelectric Performances of Bismuth Antimony Telluride via Synergistic Combination of Multiscale Structuring and Band Alignment by FeTe2 Incorporation.

    Science.gov (United States)

    Shin, Weon Ho; Roh, Jong Wook; Ryu, Byungki; Chang, Hye Jung; Kim, Hyun Sik; Lee, Soonil; Seo, Won Seon; Ahn, Kyunghan

    2018-01-31

    It has been a difficulty to form well-distributed nano- and mesosized inclusions in a Bi 2 Te 3 -based matrix and thereby realizing no degradation of carrier mobility at interfaces between matrix and inclusions for high thermoelectric performances. Herein, we successfully synthesize multistructured thermoelectric Bi 0.4 Sb 1.6 Te 3 materials with Fe-rich nanoprecipitates and sub-micron FeTe 2 inclusions by a conventional solid-state reaction followed by melt-spinning and spark plasma sintering that could be a facile preparation method for scale-up production. This study presents a bismuth antimony telluride based thermoelectric material with a multiscale structure whose lattice thermal conductivity is drastically reduced with minimal degradation on its carrier mobility. This is possible because a carefully chosen FeTe 2 incorporated in the matrix allows its interfacial valence band with the matrix to be aligned, leading to a significantly improved p-type thermoelectric power factor. Consequently, an impressively high thermoelectric figure of merit ZT of 1.52 is achieved at 396 K for p-type Bi 0.4 Sb 1.6 Te 3 -8 mol % FeTe 2 , which is a 43% enhancement in ZT compared to the pristine Bi 0.4 Sb 1.6 Te 3 . This work demonstrates not only the effectiveness of multiscale structuring for lowering lattice thermal conductivities, but also the importance of interfacial band alignment between matrix and inclusions for maintaining high carrier mobilities when designing high-performance thermoelectric materials.

  19. Mechanical properties of bismuth telluride (Bi{sub 2}Te{sub 3}) processed by high pressure torsion (HPT); Propiedades mecanicas del telururo de bismuto (Bi{sub 2}Te{sub 3}) procesado mediante torsion bajo alta presion (HPT)

    Energy Technology Data Exchange (ETDEWEB)

    Santamaria, J. A.; Alkorta, J.; Gil Sevillano, J.

    2013-06-01

    Bismuth telluride, Bi{sub 2}Te{sub 3}, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi{sub 2}Te{sub 3} is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric figure of merit results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa) using high pressure torsion (HPT, one turn at room temperature). Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation. (Author) 11 refs.

  20. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  1. Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization

    International Nuclear Information System (INIS)

    Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D

    2007-01-01

    A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions

  2. The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires

    International Nuclear Information System (INIS)

    Kojda, D; Mitdank, R; Fischer, S F; Mogilatenko, A; Töllner, W; Nielsch, K; Wang, Z; Kröner, M; Woias, P

    2014-01-01

    The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and morphology is under debate. Here, we choose two individual bismuth telluride nanowires (NWs), one with a strong diameter variation between 190 nm and 320 nm (NW1) and the other of 187 nm diameter with smooth sidewalls (NW2). Both serve as model systems for which bulk properties are expected if surface properties do not contribute. We investigate the role of the diameter variation by means of a combined full-thermoelectrical, structural and chemical characterization. By transmission electron microscopy the structure, chemical composition and morphology were determined after the thermoelectrical investigation. The NWs showed an oriented growth along the [110] direction and the same composition. The Seebeck coefficients of both NWs are comparable to each other. The electrical conductivity of both NWs exceeds the bulk value indicating the presence of a topological surface state. Whereas the thermal conductivity of NW2 compares to the bulk, the thermal conductivity of NW1 is about half of NW2 which is discussed with respect to its distinct diameter variation. (invited article)

  3. Iron telluride nanorods-based system for the detection of total mercury in blood

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Prathik; Lin, Zong-Hong [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Liang, Chi-Te [Department of Physics, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Huan-Tsung, E-mail: changht@ntu.edu.tw [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-12-15

    Graphical abstract: Elucidation of the detection of mercury using iron telluride nanorods (FeTe NRs), and dose-response curve for varying concentrations of Hg{sup 2+}. Highlights: Black-Right-Pointing-Pointer Iron telluride nanorods (FeTe NRs) are prepared from tellurium nanowires (Te NWs). Black-Right-Pointing-Pointer Mercury telluride nanorods (HgTe NRs) form by cation exchange reaction of FeTe NRs. Black-Right-Pointing-Pointer Fe{sup 2+} ions released catalyze the oxidation of ABTS by H{sub 2}O{sub 2}. Black-Right-Pointing-Pointer Mercury is effectively determined in blood with an LOD of 1.31 nM at S/N ratio 3. - Abstract: We have developed a simple, colorimetric iron telluride (FeTe) nanorods (NRs) based system for the detection of mercury, mainly based on the cation exchange reaction between FeTe NRs and Hg{sup 2+}. FeTe NRs (length, 105 {+-} 21 nm) react with Hg{sup 2+} to form HgTe NRs (length, 112 {+-} 26 nm) and consequently release Fe{sup 2+} ions that catalyzes the oxidation between a peroxidase substrate 2,2 Prime -azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) and H{sub 2}O{sub 2}. The concentration of Fe{sup 2+} and thereby Hg{sup 2+} can be determined by measuring the absorbance of the ABTS oxidized product at 418 nm. This approach allows the detection of Hg{sup 2+}, with a limit of detection of 1.31 nM at a signal-to-noise ratio 3 and a linear range 5-100 nM (R{sup 2} = 0.99). The low-cost, simple, sensitive, and reproducible assay has been validated for the detection of Hg{sup 2+} in a blood sample (SRM 955c), with the result being in good agreement with that provided by National Institute of Standards and Technology.

  4. Quantum oscillations of conductivity in bismuth wires

    International Nuclear Information System (INIS)

    Condrea, Elena

    2011-01-01

    Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38 %) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. A simple evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.

  5. Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

    Energy Technology Data Exchange (ETDEWEB)

    Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Schmitz, Andreas [Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany); Hartung, David; Klar, Peter J. [Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Dankwort, Torben; Kienle, Lorenz [Institute for Material Science, Christian-Albrechts-University, Kaiserstrasse 2, D-24143 Kiel (Germany); Mueller, Eckhard, E-mail: Eckhard.Mueller@dlr.de [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany)

    2016-06-07

    We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Room temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.

  6. Tuning of the Seebeck Coefficient and the Electrical and Thermal Conductivity of Hybrid Materials Based on Polypyrrole and Bismuth Nanowires.

    Science.gov (United States)

    Hnida, Katarzyna E; Pilarczyk, Kacper; Knutelski, Marcin; Marzec, Mateusz; Gajewska, Marta; Kosonowski, Artur; Chlebda, Damian; Lis, Bartłomiej; Przybylski, Marek

    2018-04-06

    The growing demand for clean energy catalyzes the development of new devices capable of generating electricity from renewable energy resources. One of the possible approaches focuses on the use of thermoelectric materials (TE), which may utilize waste heat, water, and solar thermal energy to generate electrical power. An improvement of the performance of such devices may be achieved through the development of composites made of an organic matrix filled with nanostructured thermoelectric materials working in a synergetic way. The first step towards such designs requires a better understanding of the fundamental interactions between available materials. In this paper, this matter is investigated and the questions regarding the change of electrical and thermal properties of nanocomposites based on low-conductive polypyrrole enriched with bismuth nanowires of well-defined geometry and morphology is answered. It is clearly demonstrated that the electrical conductivity and the Seebeck coefficient may be tuned either simultaneously or separately within particular Bi NWs content ranges, and that both parameters may be increased at the same time. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. BiOCl nanowire with hierarchical structure and its Raman features

    International Nuclear Information System (INIS)

    Tian Ye; Guo Chuanfei; Guo Yanjun; Wang Qi; Liu Qian

    2012-01-01

    BiOCl is a promising V-VI-VII-compound semiconductor with excellent optical and electrical properties, and has great potential applications in photo-catalysis, photoelectric, etc. We successfully synthesize BiOCl nanowire with a hierarchical structure by combining wet etch (top-down) with liquid phase crystal growth (bottom-up) process, opening a novel method to construct ordered bismuth-based nanostructures. The morphology and lattice structures of Bi nanowires, β-Bi 2 O 3 nanowires and BiOCl nanowires with the hierarchical structure are investigated by scanning electron microscope (SEM) and transition electron microscope (TEM). The formation mechanism of such ordered BiOCl hierarchical structure is considered to mainly originate from the highly preferred growth, which is governed by the lattice match between (1 1 0) facet of BiOCl and (2 2 0) or (0 0 2) facet of β-Bi 2 O 3 . A schematic model is also illustrated to depict the formation process of the ordered BiOCl hierarchical structure. In addition, Raman properties of the BiOCl nanowire with the hierarchical structure are investigated deeply.

  8. Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

    International Nuclear Information System (INIS)

    Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

    2014-01-01

    We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

  9. Size-effect features on the magnetothermopower of bismuth nanowires

    International Nuclear Information System (INIS)

    Condrea, E.; Nicorici, A.

    2011-01-01

    Full text: In this work we have studied the magnetic field dependence of the thermopower (TEP) and resistance of glass-coated Bi wires with diameter (d) from 100 nm to at 1.5 μm below 80 K. Nanowires have anomalously large values of the thermopower (+100 μV K.1) and relatively high effective resistivities, but their frequencies of SdH oscillations remain those of bulk Bi. The TEP stays positive in longitudinal magnetic fields up to 15 T, where the surface scattering of charge carriers is negligible. Our analysis shows that the anomalous thermopower has a diffusion origin and is a consequence of the microstructure rather than the result of the strong scattering of electrons by the wire walls. The intensities of field at which the size-effect features appear on the magnetothermopower curves correspond to a value at which the diameter of the hole cyclotron orbit equals d. Size-effect features were observed only for set of nanowires with d = 100-350 nm, where diffusion TEP is dominant. The contribution of the phonon-drag effect was observed in a wire with diameter larger than 400 nm and becomes dominant at diameter of 1 μm. (authors)

  10. Bismuth ions are metabolized into autometallographic traceable bismuth-sulphur quantum dots

    Directory of Open Access Journals (Sweden)

    M Stoltenberg

    2009-06-01

    Full Text Available Bismuth – sulphur quantum dots can be silver enhanced by autometallography (AMG. In the present study, autometallographic silver enhanced bismuth-sulphur nanocrystals were isolated from unfixed cryo-sections of kidneys and livers of rats exposed to bismuth (Bi207 subnitrate. After being subjected to AMG all the organic material was removed by sonication and enzymatic digestion and the silver enhanced Bi- S quantum dots spun down by an ultracentrifuge and analyzed by scintillation. The analysis showed that the autometallographic technique traces approximately 94% of the total bismuth. This implies that the injected bismuth is ultimately captured in bismuthsulphur quantum dots, i.e., that Bi-S nanocrystals are the end product of bismuth metabolism

  11. Mercury telluride as a zero-gap semiconductor

    International Nuclear Information System (INIS)

    Berchenko, N.N.; Pashkovskij, M.V.

    1976-01-01

    The paper presents a review of main properties of mercury telluride which is a representative of a new class of substances - gapless semiconductors. The causes leading to the appearance of a gapless state in mercury chalcogenides are considered; it is demonstrated that the main role in the formation of the inverse band structure belongs to relativistic corrections. The specific properties of mercury telluride are associated with the zero forbidden band, p-like nature of electron states of the conduction band and its nonparabolicity, resonance states of impurities and anomalies of dielectric permittivity. Conditions of forbidden band appearing in mercury telluride under the effect external factors are analyzed

  12. Occurency and aqueous processing of tellurides from Sonora (Mexico)

    International Nuclear Information System (INIS)

    Aguayo, S.; Perez, E.; Ecinas, M.A.

    1996-01-01

    Tellurium production is limited mainly to that obtained from the treatment of electrolyte muds from copper refineries. however, there are several other sources from which the precious metal tellurides are potentially attractive. This work presents a review of the main localitiesin Sonora (Mexico), where tellurides have been found. In addition, based upon the physical chemistry fundamentals for tellurium and precious metal tellurides, the aqueous extraction and recovery routes are discussed. (Author) 51 refs

  13. Rajnikant

    Indian Academy of Sciences (India)

    Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor · Sandeep Arya Saleem Khan Suresh Kumar Rajnikant Verma Parveen Lehana · More Details Abstract Fulltext PDF. Copper telluride (CuTe) nanowires were synthesized electrochemically from aqueous acidic ...

  14. Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)

    2014-07-15

    In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Photoresponsive properties of ultrathin silicon nanowires

    International Nuclear Information System (INIS)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas

    2014-01-01

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10 4  A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices

  16. Photoresponsive properties of ultrathin silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  17. Investigation of Thermoelectric Parameters of Bi2Te3: TEGs Assembled using Pressure-Assisted Silver Powder Sintering-Based Joining Technology

    Science.gov (United States)

    Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2015-06-01

    Operation of thermoelectric generator (TEG) modules based on bismuth telluride alloys at temperatures higher than 250°C is mostly limited by the melting point of the assembly solder. Although the thermoelectric parameters of bismuth telluride materials degrade for temperatures >130°C, the power output of the module can be enhanced with an increase in the temperature difference. For this, a temperature-stable joining technique, especially for the hot side of the modules, is required. Fabrication and process parameters of TEG modules consisting of bismuth telluride legs, alumina ceramics and copper interconnects using a joining technique based on pressure-assisted silver powder sintering are described. Measurements of the thermal force, electrical resistance, and output power are presented that were performed for hot side module temperatures up to 350°C and temperature differences higher than 300°C. Temperature cycling and results measured during extended high-temperature operation are addressed.

  18. Bismuth absorption from sup 205 Bi-labelled pharmaceutical bismuth compounds used in the treatment of peptic ulcer disease

    Energy Technology Data Exchange (ETDEWEB)

    Dresow, B.; Fischer, R.; Gabbe, E.E.; Wendel, J.; Heinrich, H.C. (Eppendorf University Hospital, Hamburg (Germany))

    1992-04-01

    The absorption of bismuth from five {sup 205}Bi-labelled pharmaceutically used bismuth compounds was studied in man. From single oral doses of all compounds under investigation only <0.1% bismuth was absorbed and excreted with the urine. A significantly higher absorption was observed from the colloidal bismuth subcitrate and the basic bismuth gallate than from the basic bismuth salicylate, nitrate and aluminate. No retention of bismuth in the whole body was found from the single dose experiment. The biologic fast-term half-lives of absorbed bismuth were calculated to be 0.12 and 1.5 days. 14 refs., 2 figs., 1 tab.

  19. Tellurium self-diffusion and point defects in lead telluride

    International Nuclear Information System (INIS)

    Simirskij, Yu.N.; Firsova, L.P.

    1982-01-01

    Method of radioactive indicators was used to determine factors of tellurium self-diffusion in lead telluride with different deviation of the composition from stoichiometric in the range of enrichment by tellurium. It was found that at 973 K factors of tellurium self-diffusion in lead telluride depend slightly on the vapor pressure of tellurium equilibrium with solid phase

  20. Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

    Science.gov (United States)

    Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

    2015-12-01

    Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

  1. Bismuth toxicity in patients treated with bismuth iodoform paraffin packs.

    Science.gov (United States)

    Atwal, A; Cousin, G C S

    2016-01-01

    Bismuth is a heavy metal used in bismuth iodoform paraffin paste (BIPP) antiseptic dressings and in a number of other medical preparations. It can be absorbed systemically and cause toxicity. We report 2 cases of such neurotoxicity after it was used in operations on the jaws. Copyright © 2015. Published by Elsevier Ltd.

  2. Radio-sensitization of animals by bismuth; Radio sensibilisation de l'animal par le bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Pierotti, T; Verain, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1969-07-01

    Digestive absorption of bismuth by animals leads to radio-sensitization. This effect is very marked when the X-rays used are centered on the absorption line of bismuth. This work has involved the use of more than 2000 C3H/JAX mice, and has shown that a maximum lethal effect, with respect to the standard, occurs for bismuth sub-nitrate doses of the order of 3 g/kg and for exposures of 700 R. For stronger or weaker doses, the sensitization effect is less marked. (authors) [French] L'absorption digestive de bismuth provoque une radiosensibilisation de l'animal. Celle-ci est nette quand le rayonnement X utilise est centre sur la raie d'absorption du bismuth. L'etude portant sur plus de 2000 souris C3H/JAX a montre une lethalite maximale par rapport aux temoins pour des doses de sous-nitrate de bismuth de l'ordre de 3 g/kg et pour des expositions de 700 R. Pour des doses plus fortes ou plus faibles, l'effet de sensibilisation est moins net. (auteurs)

  3. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators

    International Nuclear Information System (INIS)

    Schmitz, Andreas

    2013-01-01

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb 1-x Ca x Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric properties

  4. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  5. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    Science.gov (United States)

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  6. Iodine Gas Trapping using Granular Porous Bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jae Hwan; Shin, Jin Myeong; Park, Jang Jin; Park, Geun Il [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Yim, Mansung [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2014-05-15

    {sup 129}I is a radionuclide with a very long half-life of 1.57 Χ 10{sup 7} years and has negative health effects to the human body. Therefore, the emission of {sup 129}I into the air is closely regulated by the Environmental Protection Agency (EPA). Many methods for trapping gaseous {sup 129}I have been developed thus far, including wet scrubbing and adsorption using silver loaded zeolites. Although wet scrubbing can effectively remove iodine, it suffers from corrosion of the vessel due to high concentration of the scrubbing solution. Silver loaded zeolites also show effectiveness in capturing {sup 129}I gas, yet weak thermal stability of physisorbed iodine remains a challenge. We studied a novel and facile method to trap iodine gas using bismuth. Granular bismuth having many pores was synthesized using bismuth nitrate and polyvinyl alcohol as a bismuth precursor and pore forming agent, respectively. Reaction of iodine and our samples resulted in an iodine capturing capacity of more than 2 times that of the commercial grade silver exchanged zeolite (AgX). Granular porous bismuths synthesized using bismuth nitrate and PVA show a promising performance in capturing iodine gas. The use of bismuth in trapping {sup 129}I gas can reduce the process cost as bismuth is cheap. Further study is going on to improve the mechanical property of granular porous bismuths for their easy handling.

  7. Iodine Gas Trapping using Granular Porous Bismuth

    International Nuclear Information System (INIS)

    Yang, Jae Hwan; Shin, Jin Myeong; Park, Jang Jin; Park, Geun Il; Yim, Mansung

    2014-01-01

    129 I is a radionuclide with a very long half-life of 1.57 Χ 10 7 years and has negative health effects to the human body. Therefore, the emission of 129 I into the air is closely regulated by the Environmental Protection Agency (EPA). Many methods for trapping gaseous 129 I have been developed thus far, including wet scrubbing and adsorption using silver loaded zeolites. Although wet scrubbing can effectively remove iodine, it suffers from corrosion of the vessel due to high concentration of the scrubbing solution. Silver loaded zeolites also show effectiveness in capturing 129 I gas, yet weak thermal stability of physisorbed iodine remains a challenge. We studied a novel and facile method to trap iodine gas using bismuth. Granular bismuth having many pores was synthesized using bismuth nitrate and polyvinyl alcohol as a bismuth precursor and pore forming agent, respectively. Reaction of iodine and our samples resulted in an iodine capturing capacity of more than 2 times that of the commercial grade silver exchanged zeolite (AgX). Granular porous bismuths synthesized using bismuth nitrate and PVA show a promising performance in capturing iodine gas. The use of bismuth in trapping 129 I gas can reduce the process cost as bismuth is cheap. Further study is going on to improve the mechanical property of granular porous bismuths for their easy handling

  8. Thermal decomposition synthesis of nanorods bismuth sulphide from bismuth N-ethyl cyclohexyl dithiocarbamate complex

    International Nuclear Information System (INIS)

    Abdullah, Nurul Hidayah; Zainal, Zulkarnain; Silong, Sidik; Tahir, Mohamed Ibrahim Mohamed; Tan, Kar-Ban; Chang, Sook-Keng

    2016-01-01

    Highlights: • Bismuth N-ethyl cyclohexyl dithiocarbamate was used as single source precursor. • No surfactant was used in the preparation of Bi_2S_3 nanorods. • Pure phase orthorhombic Bi_2S_3 is obtained. • Bismuth sulphide with an average atomic ratio of Bi:S close to 2:3 is obtained. - Abstract: Nanorods of bismuth sulphide were prepared by thermal decomposition of bismuth N-ethyl cyclohexyl dithiocarbamate at different calcination duration. X-ray diffraction (XRD) analysis shows that at 400 °C, the precursor was fully decomposed to orthorhombic bismuth sulphide after 2 h of calcination. Besides, calcination duration does not affect the existence of Bi_2S_3 phase. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analyses reveal that Bi_2S_3 nanorods with an average width ranging from 29–36 nm were obtained. Energy dispersive X-ray (EDX) analysis confirmed the atomic ratio of Bi and S close to 2:3, giving a possible composition of Bi_2S_3. Direct band gap energy of Bi_2S_3 decreases from 1.83 eV to 1.54 eV as calcination time increases.

  9. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  10. Thermoelectric Coolers with Sintered Silver Interconnects

    Science.gov (United States)

    Kähler, Julian; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2014-06-01

    The fabrication and performance of a sintered Peltier cooler (SPC) based on bismuth telluride with sintered silver interconnects are described. Miniature SPC modules with a footprint of 20 mm2 were assembled using pick-and-place pressure-assisted silver sintering at low pressure (5.5 N/mm2) and moderate temperature (250°C to 270°C). A modified flip-chip bonder combined with screen/stencil printing for paste transfer was used for the pick-and-place process, enabling high positioning accuracy, easy handling of the tiny bismuth telluride pellets, and immediate visual process control. A specific contact resistance of (1.4 ± 0.1) × 10-5 Ω cm2 was found, which is in the range of values reported for high-temperature solder interconnects of bismuth telluride pellets. The realized SPCs were evaluated from room temperature to 300°C, considerably outperforming the operating temperature range of standard commercial Peltier coolers. Temperature cycling capability was investigated from 100°C to 235°C over more than 200 h, i.e., 850 cycles, during which no degradation of module resistance or cooling performance occurred.

  11. Anomalies in the transverse magnetoresistance of bismuth nanowires in the quantum low-dimensional limit

    International Nuclear Information System (INIS)

    Nikolaeva, A.A.; Konopko, L.A.; Tsurkan, A.K.; Botnari, O.V.

    2013-01-01

    Full text: We report here anomalies observed at low temperatures in the transverse magnetoresistance of single Bi nanowires. Bi wires in glass capillary were prepared by liquid phase casting technique with diameters up to 45 nm. The Bi wire are single crystals, with their axis oriented in the bisectrix trigonal plane, about 19 degrees from bisectrix axis. For the first time it was found that the field dependence of transverse magnetoresistance (TMR), R(H) at I perpendicular H in Bi wires with d 0 at T<5K. Effect has been observed at low temperatures in Bi nanowires, with diameter around the critical diameter, at the semimetal-to-semiconductor transition (SMSCT) due to size quantization effect. To interpret these anomalous an accurate model of parabolic potentials taken into account the anisotropy of effective mass of current carriers have been used. The electrical conductivity of quantum Bi wires in the homogeneous magnetic field, directed perpendicular to axis of quantum wire is calculated using the Cubo formula taking into account the scattering process carrier on the interface roughest and phonons. The experimental results confirm the existence of the semimetal-semiconductor phase transition seen in the transverse magnetoresistance.

  12. Bismuth titanate nanorods and their visible light photocatalytic properties

    International Nuclear Information System (INIS)

    Pei, L.Z.; Liu, H.D.; Lin, N.; Yu, H.Y.

    2015-01-01

    Highlights: • Bismuth titanate nanorods have been synthesized by a simple hydrothermal process. • The size of bismuth titanate nanorods can be controlled by growth conditions. • Bismuth titanate nanorods show good photocatalytic activities of methylene blue and Rhodamine B. - Abstract: Bismuth titanate nanorods have been prepared using a facile hydrothermal process without additives. The bismuth titanate products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and UV-vis diffusion reflectance spectrum. XRD pattern shows that the bismuth titanate nanorods are composed of cubic Bi 2 Ti 2 O 7 phase. Electron microscopy images show that the length and diameter of the bismuth titanate nanorods are 50-200 nm and 2 μm, respectively. Hydrothermal temperature and reaction time play important roles on the formation and size of the bismuth titanate nanorods. UV-vis diffusion reflectance spectrum indicates that bismuth titanate nanorods have a band gap of 2.58 eV. The bismuth titanate nanorods exhibit good photocatalytic activities in the photocatalytic degradation of methylene blue (MB) and Rhodamine B (RB) under visible light irradiation. The bismuth titanate nanorods with cubic Bi 2 Ti 2 O 7 phase are a promising candidate as a visible light photocatalyst

  13. Special features of self-compensation of halogen donor action in lead telluride

    International Nuclear Information System (INIS)

    Kajdanov, V.I.; Nemov, S.A.; Ravich, Yu.I.; Dereza, A.Yu.

    1985-01-01

    Specific features of self-compensation of halogen donor action in lead telluride are investigasted. Lead telluride samples with chlorine additions (with tellurium excess) and, besides, with bromine- and iodine additions were studied in order to reveal general regularities in alloyind with all halogen donor impurities. Experimental dependences of the difference between the electron and hole concentrations (n-p) in PbTe as a function of an amount of introduced halogen impurities (Ni) are presented for samples with a maximum compensation at 295 K. General features of the n-p=f(Ni) dependence are presented for all halogens. The hypothesis on the kinetic mechanism of increasing the efficiency of self-compensation of halogen donor action in lead telluride is suggested

  14. Bismuth( Ⅲ ) Salts: Green Catalysts for Organic Transformations

    Institute of Scientific and Technical Information of China (English)

    C. Le Roux

    2005-01-01

    @@ 1Introduction Bismuth, the heaviest stable element in the periodic table, stands out from other heavy elements (such as mercury, thallium and lead) due to its relatively non-toxic character which confers on bismuth the enviable status of being an eco-friendly element. Therefore, bismuth and its compounds hold considerable promise as useful catalysts for green chemistry. The research presented in this communication is devoted to the applications of bismuth( Ⅲ ) salts as catalysts for organic transformations.After some general comments about bismuth and a short presentation of the various applications of bismuth( Ⅲ ) salts in organic synthesis, this communication will focus on the works done in our research group during the last several years which deals mainly with electrophilic substitutions. When appropriate, some mechanistic details will be given.

  15. Gravimetric Analysis of Bismuth in Bismuth Subsalicylate Tablets: A Versatile Quantitative Experiment for Undergraduate Laboratories

    Science.gov (United States)

    Davis, Eric; Cheung, Ken; Pauls, Steve; Dick, Jonathan; Roth, Elijah; Zalewski, Nicole; Veldhuizen, Christopher; Coeler, Joel

    2015-01-01

    In this laboratory experiment, lower- and upper-division students dissolved bismuth subsalicylate tablets in acid and precipitated the resultant Bi[superscript 3+] in solution with sodium phosphate for a gravimetric determination of bismuth subsalicylate in the tablets. With a labeled concentration of 262 mg/tablet, the combined data from three…

  16. Flame spray synthesis under a non-oxidizing atmosphere: Preparation of metallic bismuth nanoparticles and nanocrystalline bulk bismuth metal

    Energy Technology Data Exchange (ETDEWEB)

    Grass, Robert N.; Stark, Wendelin J. [Institute for Chemical and Bioengineering, ETH Zuerich (Switzerland)], E-mail: wendelin.stark@chem.ethz.ch

    2006-10-15

    Metallic bismuth nanoparticles of over 98% purity were prepared by a modified flame spray synthesis method in an inert atmosphere by oxygen-deficient combustion of a bismuth-carboxylate based precursor. The samples were characterized by X-ray diffraction, thermal analysis and scanning electron microscopy confirming the formation of pure, crystalline metallic bismuth nanoparticles. Compression of the as-prepared powder resulted in highly dense, nanocrystalline pills with strong electrical conductivity and bright metallic gloss.

  17. Effect of excess bismuth on the dielectric and piezoelectric properties of strontium bismuth niobate ceramics

    International Nuclear Information System (INIS)

    Verma, Maya; Tanwar, Amit; Sreenivas, K.

    2013-01-01

    Excess Bismuth Strontium Bismuth Niobate (Sr 2 Bi 2 Nb 2 O 9 + x wt% Bi 2 O 3 ) ceramics were prepared using conventional solid state reaction method by varying x in the range (x=0%wt - 20%wt). X-ray diffraction studies reveal no significant shift in the peak positions as the Bi content increases from 0.0 to 5%wt. However, at a higher content of Bi beyond x = 5wt% secondary phases relating to Bi 2 O 3 are identified. The c-axis orientation is found to be minimum for SBN ceramic prepared with 5% excess bismuth whereas with further increase in excess Bi 2 O 3 addition during processing, SBN ceramics show a much stronger c-axis orientation. Room temperature dielectric constant measured at 100 KHz is found to increase from 117 to 130 with increase in Bi content from x = 0 to 10wt% suggesting Bi addition has make up for the bismuth losses at higher sintering temperature (1200℃), however with further increase in Bi content (x > 10wt%), the dielectric constant decreases, and could be due to the increased probability of segregation of Bi on the grains of SBN ceramics. The improvement in ferroelectric properties were obtained when the bismuth excess is increased from 0% to 5%. It may be observed that on increasing the excess bismuth to 5%, the transition temperature increases from 424 to 450℃, while further increasing to 10%, transition becomes slightly diffused and phase transition temperature gets decreased to 398℃, which may be due to the formation of secondary phase. 5% excess Bi is found to enhance the dielectric and ferroelectricity properties, and any further increase of Bi in excess (>10%) during processing is found to degrade the electrical and functional properties of SBN. (author)

  18. Development of lead-bismuth coolant technology for nuclear device

    International Nuclear Information System (INIS)

    Kamata, Kin-ya; Kitano, Teruaki; Ono, Mikinori

    2004-01-01

    Liquid lead-bismuth is a promising material as a future fast reactor coolant or an intensive neutron source material for accelerator driven transmutation system (ADS). To develop nuclear plants and their installations using lead-bismuth coolant for practical use, both coolant technologies, inhabitation process of steels and quality control of coolant, and total operation system for liquid lead-bismuth plants are required. Based on the experience of liquid metal coolant, Mitsui Engineering and Shipbuilding Co., Ltd. (MES) has completed the liquid lead-bismuth forced circulation loop and has acquired various engineering data on main components including economizer. As a result of tis operation, MES has developed key technologies of lead-bismuth coolant such as controlling of oxygen content in lead-bismuth and a purification of lead-bismuth coolant. MES participated in the national project, ''The Development of Accelerator Driven Transmutation System'', together with JAERI (Japan Atomic Energy Research Institute) and started corrosion test for beam window of ADS. (author)

  19. Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide

    International Nuclear Information System (INIS)

    Danilova, M.G.; Sveshnikova, L.L.; Stavitskaya, T.A.; Repinskij, S.M.

    1991-01-01

    Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide was investigated. Dependences of change of PbTe dissolution rate on concentration of hydrogen peroxide and alkali in the solution were obtained. It is shown that dissolution rate of lead telluride is affected by dissolution rate of lead oxide, representing the product of ReTe dissolution. The obtained regularities can be explained by change of solution structure with increase of KOH concentration and by the state of hydrogen peroxide in the solution

  20. Bismuth Subgallate Toxicity in the Age of Online Supplement Use.

    Science.gov (United States)

    Sampognaro, Paul; Vo, Kathy T; Richie, Megan; Blanc, Paul D; Keenan, Kevin

    2017-11-01

    Bismuth salts have been used to treat gastroenterological disorders and are readily available over-the-counter and via the internet. Even though generally considered safe, bismuth compounds can cause a syndrome of subacute, progressive encephalopathy when taken in large quantities. We present the case of woman who developed progressive encephalopathy, aphasia, myoclonus, and gait instability after chronically ingesting large amounts of bismuth subgallate purchased from a major online marketing website to control symptoms of irritable bowel syndrome. After extensive neurological work-up, elevated bismuth levels in her blood, urine, and cerebrospinal fluid confirmed the diagnosis of bismuth-related neurotoxicity. She improved slowly following cessation of exposure. This case highlights bismuth subgallate as a neurotoxic bismuth formulation and reminds providers of the potential for safety misconceptions of positively reviewed online supplements.

  1. In situ electron beam irradiated rapid growth of bismuth nanoparticles in bismuth-based glass dielectrics at room temperature

    International Nuclear Information System (INIS)

    Singh, Shiv Prakash; Karmakar, Basudeb

    2011-01-01

    In this study, in situ control growth of bismuth nanoparticles (Bi 0 NPs) was demonstrated in bismuth-based glass dielectrics under an electron beam (EB) irradiation at room temperature. The effects of EB irradiation were investigated in situ using transmission electron microscopy (TEM), selected-area electron diffraction and high-resolution transmission electron microscopy. The EB irradiation for 2–8 min enhanced the construction of bismuth nanoparticles with a rhombohedral structure and diameter of 4–9 nm. The average particle size was found to increase with the irradiation time. Bismuth metal has a melting point of 271 °C and this low melting temperature makes easy the progress of energy induced structural changes during in situ TEM observations. This is a very useful technique in nano-patterning for integrated optics and other applications.

  2. Telluride School, Telluride, Colorado solar-energy-system performance evaluation, February 1982-April 1982

    Energy Technology Data Exchange (ETDEWEB)

    Welch, K.M.

    1982-01-01

    The Telluride School solar site is an elementary/junior-senior high school in Colorado with a passive/active hybrid solar energy system designed to supply 40% of the heating load. It is equipped with a 1428 square foot, double glazed Trombe wall, a 1392 square foot greenhouse with collection tube, and an auxiliary oil-fired boiler. Monthly performance data are tabulated for the overall system and for the Trombe wall, greenhouse, and greenhouse storage. System operation is illustrated by graphs of typical Trombe wall insolation and temperatures and typical greenhouse insolation and temperatures. (LEW)

  3. Valley polarization in bismuth

    Science.gov (United States)

    Fauque, Benoit

    2013-03-01

    The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

  4. Bismuth oxyfluoride @ CMK-3 nanocomposite as cathode for lithium ion batteries

    Science.gov (United States)

    Ni, Dan; Sun, Wang; Xie, Liqiang; Fan, Qinghua; Wang, Zhenhua; Sun, Kening

    2018-01-01

    Bismuth oxyfluoride impregnated CMK-3 nanocomposite is synthesized by a facile nanocasting approach. Mesoporous carbon CMK-3 can suppress the aggregation and growth of bismuth oxyfluoride particles and offer rapid electron and Li ion passageways. Bismuth oxyfluoride nanoparticles are embedded in the mesoporous channels with particle size less than 20 nm. The bismuth oxyfluoride@CMK-3 nanocomposite maintains 148 mA h g-1 after 40 cycles with the capacity from both the bismuth oxyfluoride and the functional groups on the mesoporous carbon. The hybrid with confined bismuth oxyfluoride nanoparticles, conductive carbon network, and oxygen functional groups on the carbon matrix exhibits higher capacity and cycling stability than bulk bismuth oxyfluoride particles when used as lithium ion batteries cathode.

  5. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives

    International Nuclear Information System (INIS)

    Zweibel, K.; Moskowitz, P.; Fthenakis, V.

    1998-02-01

    Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers

  6. Investigation of Nanophase Materials for Thermoelectric Applications

    National Research Council Canada - National Science Library

    Stokes, Kevin

    2004-01-01

    .... Watson Research Center. Our major accomplishments include the chemical synthesis of nanoparticles, nanorods and nanowires of lead chalcogenide, bismuth calcogenide and bismuth antimony materials...

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Bismuth X-ray absorber studies for TES microcalorimeters

    International Nuclear Information System (INIS)

    Sadleir, J.E.; Bandler, S.R.; Brekosky, R.P.; Chervenak, J.; Figueroa-Feliciano, E.; Finkbeiner, F.; Iyomoto, N.; Kelley, R.L.; Kilbourne, C.A.; King, J.M.; Porter, F.S.; Robinson, I.K.; Saab, T.; Talley, D.J.

    2006-01-01

    Bismuth's large atomic number and low carrier density makes it an attractive X-ray absorber material for microcalorimeters. Bismuth's long Fermi wavelength and long mean free paths have motivated much interest in the fabrication of high quality bismuth films to study quantum size effects. Despite such incentives, fabrication of high quality bismuth films has proven difficult, and measured properties of such films are highly variable in the literature. Implementing a bismuth deposition process for TES (superconducting Transition Edge Sensor) device fabrication presents additional challenges particularly at interfaces due to the inherent granularity and surface roughness of its films, its low melting point, and its tendency to diffuse and form undesired intermetallic phases. We report observations of Bi-Cu and Bi-Au diffusion in our devices correlating with large shifts in T c (superconducting transition temperature). Using SEM and in situ R vs T annealing experiments we have been able to study these diffusion processes and identify their activation temperatures

  9. Thermodynamics Calculation and Experimental Study on Separation of Bismuth from a Bismuth Glance Concentrate Through a Low-Temperature Molten Salt Smelting Process

    Science.gov (United States)

    Yang, Jian-Guang; He, De-Wen; Tang, Chao-Bo; Chen, Yong-Ming; Sun, Ya-Hui; Tang, Mo-Tang

    2011-08-01

    The main purpose of this study is to characterize and separate bismuth from a bismuth glance concentrate through a low-temperature, sulfur-fixing smelting process. This article reports on a study conducted on the optimization of process parameters, such as Na2CO3 and zinc oxide wt pct in charging, smelting temperature, smelting duration on the bismuth yield, resultant crude bismuth grade, and sulfur-fixing rate. A maximum bismuth recovery of 97.31 pct, crude bismuth grade of 96.93 pct, and 98.23 pct sulfur-fixing rate are obtained when a charge (containing 63.50 wt pct of Na2CO3 and 22.50 wt pct of bismuth glance, as well as 5 pct in excess of the stoichiometric requirement of zinc oxide dosage) is smelted at 1000 K (727 °C) for 150 minutes. This smelting operation is free from atmospheric pollution because zinc oxide is used as the sulfur-fixing agent, which can capture sulfur from bismuth sulfide and form the more thermodynamic-stable compound, zinc sulfide. The solid residue is subjected to a mineral dressing operation to obtain suspension, which is filtered to produce a cake, representing the solid particles of zinc sulfide. Based on the results of the chemical content analysis of the as-resultant zinc sulfide, more than 93 pct zinc sulfide can be recovered, and the recovered zinc sulfide grade can reach 60.20 pct. This material can be sold as zinc sulfide concentrate or roasted to be regenerated as zinc oxide.

  10. Bismuth-Based Quadruple Therapy with Bismuth Subcitrate, Metronidazole, Tetracycline and Omeprazole in the Eradication of Helicobacter pylori

    Directory of Open Access Journals (Sweden)

    Raymond Lahaie

    2001-01-01

    Full Text Available BACKGROUND: A previous study showed that 14 days of qid bismuth-based triple therapy with tetracycline 500 mg, metronidazole 250 mg and colloidal bismuth subcitrate 120 mg resulted in excellent Helicobacter pylori eradication rates (89.5%. The present study looked at a shorter treatment period by adding omeprazole and by reducing the dose of tetracycline.

  11. Nanophotonic Modulator with Bismuth Ferrite as Low-loss Switchable Material

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

    2015-01-01

    We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved.......We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved....

  12. Rise time spectroscopy in cadmium telluride detectors

    International Nuclear Information System (INIS)

    Scharager, Claude; Siffert, Paul; Carnet, Bernard; Le Meur, Roger.

    1980-11-01

    By a simultaneous analysis of rise time and pulse amplitude distributions of the signals issued from various cadmium telluride detectors, it is possible to obtain informations about surface and bulk trapping, field distribution within the detectors, as well as charge collection and transport properties. These investigations have been performed on both pure and chlorine doped and materials for various surfaces preparation conditions [fr

  13. Process for obtaining oxygen doped zinc telluride monocrystals and scintillator crystals obtained by this process

    International Nuclear Information System (INIS)

    Schneider, Maurice; Moreau, Roland; D'Haenen, J.-P.; Merenda, Pierre.

    1976-01-01

    A process is described for obtaining oxygen doped zinc telluride monocrystals, for use as scintillator crystals for ionising radiation detectors. The following operations are carried out in succession: one or several zinc telluride crystals are introduced into a silica ampoule together with a ternary mixture of zinc tellurium and oxygen, as an oxide or hydroxide of these elements; the ampoule is pumped down to a high vacuum and sealed; the sealed ampoule containing the mixture and monocrystals is placed in a kiln and brought to a uniform temperature sufficient to make the mixture three-phased, depending on its composition; the zinc telluride crystalline compound remains solid; the ampoule is then tempered to bring it quickly back to ambient temperature [fr

  14. Lead- or Lead-bismuth-cooled fast reactors

    International Nuclear Information System (INIS)

    Bouchter, J.C.; Courouau, J.L.; Dufour, P.; Guidez, J.; Latge, C.; Martinelli, L.; Renault, C.; Rimpault, G.

    2014-01-01

    Lead-cooled fast reactors are one of the 6 concepts retained for the 4. generation of nuclear reactors. So far no lead-cooled reactors have existed in the world except lead-bismuth-cooled reactors in soviet submarines. Some problems linked to the use of the lead-bismuth eutectic appeared but were satisfactorily solved by a more rigorous monitoring of the chemistry of the lead-bismuth coolant. Lead presents various advantages as a coolant: no reactivity with water and the air,a high boiling temperature and low contamination when irradiated. The main asset of the lead-bismuth alloy is the drop of the fusion temperature from 327 C degrees to 125 C degrees. The main drawback of using lead (or lead-bismuth) is its high corrosiveness with metals like iron, chromium and nickel. The high corrosiveness of the coolant implies low flow velocities which means a bigger core and consequently a bigger reactor containment. Different research programs in the world (in Europe, Russia and the USA) are reviewed in the article but it appears that the development of this type of reactor requires technological breakthroughs concerning materials and the resistance to corrosion. Furthermore the concept of lead-cooled reactors seems to be associated to a range of low output power because of the compromise between the size of the reactor and its resistance to earthquakes. (A.C.)

  15. Short report: evaluation of Helicobacter pylori eradication with bismuth sucralfate

    NARCIS (Netherlands)

    Reijers, M. H.; Noach, L. A.; Tytgat, G. N.

    1994-01-01

    In a pilot study we have evaluated the clinical efficacy of bismuth sucralfate to eradicate H. pylori. Ten consecutive patients with chronic dyspepsia and H. pylori associated gastritis were treated with bismuth sucralfate (220 mg bismuth per tablet, 4 tablets per day for 4 weeks). If a 14C urea

  16. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Directory of Open Access Journals (Sweden)

    Ali Vazinishayan

    2018-06-01

    Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

  17. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Science.gov (United States)

    Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

    2018-06-01

    In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

  18. Formation of gas-phase π-allyl radicals from propylene over bismuth oxide and γ-bismuth molybdate catalysts

    International Nuclear Information System (INIS)

    Martir, W.; Lunsford, J.H.

    1981-01-01

    Gas-phase π-allyl radicals were produced when propylene reacted over Bi 2 O 3 and γ-bismuth molybdate catalysts at 723 K. The pressure in the catalyst zone was varied between 5 x 10 -3 and 1 torr. The radicals were detected by EPR spectroscopy together with a matrix isolation technique in which argon was used as the diluent. The matrix was formed on a sapphire rod at 12 K which was located 33-cm downstream from the catalyst. Bismuth oxide was more effective in the production of gas-phase allyl radicals than γ-bismuth molybdate. By contrast α-bismuth molybdate was ineffective in forming allyl radicals and MoO 3 acted as a sink for radicals which were produced elsewhere in the system. Comparison of the π-allyl radical and the stable product concentrations over Bi 2 O 3 revealed that gas-phase radical recombination reactions served as a major pathway for the formation of 1,5-hexadiene. Addition of small amounts of gas-phase oxygen increased the concentration of allyl radicals, and at greater oxygen levels allyl peroxy radicals were detected. Because of the effect of temperature on the equilibrium between allyl and allyl peroxy radicals, the latter product must be formed in the cooler part of the system

  19. Heat capacity, enthalpy and entropy of bismuth niobate and bismuth tantalate

    Czech Academy of Sciences Publication Activity Database

    Hampl, M.; Strejc, A.; Sedmidubský, D.; Růžička, K.; Hejtmánek, Jiří; Leitner, J.

    2006-01-01

    Roč. 179, - (2006), s. 77-80 ISSN 0022-4596 Institutional research plan: CEZ:AV0Z10100521 Keywords : heat capacity * heat of formation * heat content * bismuth perovskite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.107, year: 2006

  20. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    International Nuclear Information System (INIS)

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Misra, Soumyadeep; Roca i Cabarrocas, Pere; Yu, Linwei

    2015-01-01

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs

  1. Temperature gradient compatibility tests of some refractory metals and alloys in bismuth and bismuth--lithium solutions

    International Nuclear Information System (INIS)

    DiStefano, J.R.; Cavin, O.B.

    1976-11-01

    Quartz, T-111, and Mo thermal-convection loop tests were conducted at temperatures up to 700 0 C (100 0 C ΔT) to determine the compatibility of several refractory metals/alloys with bismuth and bismuth-lithium solutions for molten salt breeder reactor applications. Methods of evaluation included weight change measurements, metallographic examination, chemical and electron microprobe analysis, and mechanical properties tests. Molybdenum, T-111, and TA--10 percent W appear to be the most promising containment materials, while niobium and iron-based alloys are unacceptable

  2. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  3. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  4. Facile one-step direct electrodeposition of bismuth nanowires on glassy carbon electrode for selective determination of folic acid

    International Nuclear Information System (INIS)

    Ananthi, Arjunan; Kumar, Shanmugam Senthil; Phani, Kanala Lakshminarasimha

    2015-01-01

    Highlights: • BiNWs prepared through simple, fast one step electrochemical route. • BiNWs showed more catalytic activity and sensitivity than GC towards FA reduction. • Selective detection of FA was achieved with low limit of detection (9.53 × 10 −9 mol L −1 ). • Real sample analysis was successfully demonstrated using FA pharmaceutical tablets. • BiNWs based sensor matrix is inexpensive, and more suitable for FA real application. - Abstract: In the present work, we have developed a facile one step route to electrodeposition of stabilizer-free bismuth nanowires (BiNWs) on glassy carbon (GC) substrates by using a simple potentiostatic method. Formation of BiNWs on GC substrate was confirmed by field emission scanning electron microscopy (FE-SEM). The growth of BiNWs on the GC substrate was monitored by cyclic voltammetry and found that continuous in-situ generation of hydrogen bubbles during electrodeposition provides a stagnant template for the formation of BiNWs on the GC substrate. Phase-purity of the deposited BiNWs on GC substrate studied by XRD indicates no other oxide formation. The electrodeposited BiNWs on GC substrate was used for electro-reduction of folic acid (FA) and its quantitative determination in Britton-Robinson buffer of pH 4.5 solutions. The observed cyclic voltammetric reduction current of FA on BiNWs/GC is almost 15 times higher with 0.015 V less negative overpotential compared to bare GC substrate alone. This result clearly reveals the electrocatalytic activity of the deposited BiNWs. In addition, square wave voltammetry (SWV) showed a perfectly linear response in the concentration range of 1 × 10 −8 –15 × 10 −8 mol L −1 with a correlation coefficient of 0.9956. The limit of detection (LOD) and limit of quantitation (LOQ) are determined to be 9.53 × 10 −9 and 31.68 × 10 −9 mol L −1 respectively. The response of the BiNWs/GC sensor matrix is not affected by any usual interference from excess concentrations of

  5. Simulation of core-level binding energy shifts in germanium-doped lead telluride crystals

    International Nuclear Information System (INIS)

    Zyubin, A.S.; Dedyulin, S.N.; Yashina, L.V.; Shtanov, V.I.

    2007-01-01

    To simulate the changes in core-level binding energies in germanium-doped lead telluride, cluster calculations of the changes in the electrostatic potential at the corresponding centers have been performed. Different locations of the Ge atom in the crystal bulk have been considered: near vacancies, near another dopant site, and near the surface. For calculating the potential in the clusters that model the bulk and the surface of the lead telluride crystal (c-PbTe), the electron density obtained in the framework of the Hartree-Fock and hybrid density functional theory (DFT) methods has been used [ru

  6. Recent Advances in Bismuth-Based Nanomaterials for Photoelectrochemical Water Splitting.

    Science.gov (United States)

    Bhat, Swetha S M; Jang, Ho Won

    2017-08-10

    In recent years, bismuth-based nanomaterials have drawn considerable interest as potential candidates for photoelectrochemical (PEC) water splitting owing to their narrow band gaps, nontoxicity, and low costs. The unique electronic structure of bismuth-based materials with a well-dispersed valence band comprising Bi 6s and O 2p orbitals offers a suitable band gap to harvest visible light. This Review presents significant advancements in exploiting bismuth-based nanomaterials for solar water splitting. An overview of the different strategies employed and the new ideas adopted to improve the PEC performance of bismuth-based nanomaterials are discussed. Morphology control, the construction of heterojunctions, doping, and co-catalyst loading are several approaches that are implemented to improve the efficiency of solar water splitting. Key issues are identified and guidelines are suggested to rationalize the design of efficient bismuth-based materials for sunlight-driven water splitting. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Oxygen depletion of bismuth molybdates

    Energy Technology Data Exchange (ETDEWEB)

    Yong, L.K.; Howe, R.F.; Keulks, G.W.; Hall, W.K.

    1978-05-01

    Pure ..cap alpha..-phase bismuth molybdate (Bi/sub 2/Mo/sub 3/O/sub 12/), which is known to be weakly active for selective oxidation, and pure ..gamma..-phase bismuth molybdate (Bi/sub 2/MoO/sub 6/), which has good activity, were subjected to oxidation-reduction cycles with known amounts of hydrogen and oxygen, at 300/sup 0/-570/sup 0/C and with evacuation steps between treatments. The volume of oxygen consumed during reoxidation was equal to half the hydrogen consumed during the reduction on the ..cap alpha..-phase, which indicated that no hydrogen was retained during reduction. For the ..gamma..-phase, the oxygen consumption was greater than half of the hydrogen consumption and it increased with extent of reduction. The excess oxygen was apparently consumed by filling anion vacancies formed during outgassing subsequent to the reduction step. ESR spectroscopy and temperature-programed oxidation-reduction indicated that lattice oxide ions which bridge between bismuth and molybdenum layers of the koechlinite structure become more labile when the catalyst is in a partially reduced state, and that this effect is greater in the ..gamma..- than the ..cap alpha..-phase. Table and 15 references.

  8. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  9. Studies of corrosion resistance of Japanese steels in liquid lead-bismuth

    International Nuclear Information System (INIS)

    Kamata, Kin-ya; Ono, Hiroshi; Kitano, Teruaki; Ono, Mikinori

    2003-01-01

    Liquid lead-bismuth has attractive characteristics as a coolant in future fast reactors and Accelerator Driven Sub-critical Systems (ADS) applications. The corrosion behavior of structural materials in lead-bismuth eutectic is one of key problems in developing nuclear power plants and installations using lead-bismuth coolant. Our experiences with heat exchangers using liquid lead-bismuth and the results of corrosion tests of Japanese steels are reported in this paper. A series of corrosion tests was carried out in collaboration with the Institute of Physics and Power Engineering (IPPE). Test specimens of various Japanese steels were exposed in a non-isothermal forced circulation loop. The influence of maximum temperature and oxygen content in lead bismuth were chosen for study as the primary causes of corrosion in Japanese steels. After the corrosion tests, corrosion behavior was analyzed by visual inspection, measurement of weight loss and metallurgical examination of the microstructure of the corroded zone. The corrosion mechanism in liquid lead bismuth is discussed on the basis of the metallurgical examination of the corroded zone. (author)

  10. Characterization of large cadmium zinc telluride crystals grown by traveling heater method

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Iniewski, K.

    2008-01-01

    The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

  11. Helicobacter pylori second-line rescue therapy with levofloxacin- and bismuth-containing quadruple therapy, after failure of standard triple or non-bismuth quadruple treatments.

    Science.gov (United States)

    Gisbert, J P; Romano, M; Gravina, A G; Solís-Muñoz, P; Bermejo, F; Molina-Infante, J; Castro-Fernández, M; Ortuño, J; Lucendo, A J; Herranz, M; Modolell, I; Del Castillo, F; Gómez, J; Barrio, J; Velayos, B; Gómez, B; Domínguez, J L; Miranda, A; Martorano, M; Algaba, A; Pabón, M; Angueira, T; Fernández-Salazar, L; Federico, A; Marín, A C; McNicholl, A G

    2015-04-01

    The most commonly used second-line Helicobacter pylori eradication regimens are bismuth-containing quadruple therapy and levofloxacin-containing triple therapy, both offering suboptimal results. Combining bismuth and levofloxacin may enhance the efficacy of rescue eradication regimens. To evaluate the efficacy and tolerability of a second-line quadruple regimen containing levofloxacin and bismuth in patients whose previous H. pylori eradication treatment failed. This was a prospective multicenter study including patients in whom a standard triple therapy (PPI-clarithromycin-amoxicillin) or a non-bismuth quadruple therapy (PPI-clarithromycin-amoxicillin-metronidazole, either sequential or concomitant) had failed. Esomeprazole (40 mg b.d.), amoxicillin (1 g b.d.), levofloxacin (500 mg o.d.) and bismuth (240 mg b.d.) was prescribed for 14 days. Eradication was confirmed by (13) C-urea breath test. Compliance was determined through questioning and recovery of empty medication envelopes. Incidence of adverse effects was evaluated by questionnaires. 200 patients were included consecutively (mean age 47 years, 67% women, 13% ulcer). Previous failed therapy included: standard clarithromycin triple therapy (131 patients), sequential (32) and concomitant (37). A total of 96% took all medications correctly. Per-protocol and intention-to-treat eradication rates were 91.1% (95%CI = 87-95%) and 90% (95%CI = 86-94%). Cure rates were similar regardless of previous (failed) treatment or country of origin. Adverse effects were reported in 46% of patients, most commonly nausea (17%) and diarrhoea (16%); 3% were intense but none was serious. Fourteen-day bismuth- and levofloxacin-containing quadruple therapy is an effective (≥90% cure rate), simple and safe second-line strategy in patients whose previous standard triple or non-bismuth quadruple (sequential or concomitant) therapies have failed. © 2015 John Wiley & Sons Ltd.

  12. Pairing from dynamically screened Coulomb repulsion in bismuth

    Science.gov (United States)

    Ruhman, Jonathan; Lee, Patrick A.

    2017-12-01

    Recently, Prakash et al. have discovered bulk superconductivity in single crystals of bismuth, which is a semimetal with extremely low carrier density. At such low density, we argue that conventional electron-phonon coupling is too weak to be responsible for the binding of electrons into Cooper pairs. We study a dynamically screened Coulomb interaction with effective attraction generated on the scale of the collective plasma modes. We model the electronic states in bismuth to include three Dirac pockets with high velocity and one hole pocket with a significantly smaller velocity. We find a weak-coupling instability, which is greatly enhanced by the presence of the hole pocket. Therefore we argue that bismuth is the first material to exhibit superconductivity driven by retardation effects of Coulomb repulsion alone. By using realistic parameters for bismuth we find that the acoustic plasma mode does not play the central role in pairing. We also discuss a matrix element effect, resulting from the Dirac nature of the conduction band, which may affect Tc in the s -wave channel without breaking time-reversal symmetry.

  13. Diagnostic Genesis Features of Au-Ag Selenide-Telluride Mineralization of Western Java Deposits

    Directory of Open Access Journals (Sweden)

    Euis Tintin Yuningsih

    2016-01-01

    Full Text Available DOI: 10.17014/ijog.3.1.67-76The ore mineralogy of the westernmost part of West Java such as Pongkor, Cibaliung, Cikidang, Cikotok, and Cirotan are characterized by the dominance of silver-arsenic-antimony sulfosalt with silver selenides and rarely tellurides over the argentite, whereas the eastern part of West Java including Arinem and Cineam deposits are dominated by silver-gold tellurides. Mineralogy of Se-type deposits at Pongkor, Cikidang, Cibaliung, Cisungsang, and Cirotan and Te-type deposits at Arinem and Cineam shows their different geochemical characteristics. Mineralogical and geochemical differences can be explained by variation of physico-chemical conditions that existed during gold-silver deposition by applying the phase relation among sulfide, telluride, and selenide mineral association in the deposits. The relative values of ƒSe2(g, ƒTe(g, and ƒS2(g control the actual presence of selenide or telluride minerals within the West Java deposits, which also depend on their concentrations in the hydrothermal fluid. Even though the concentration of selenium in the hydrothermal fluid of Te-type deposits might have been similar or even higher than that in the Se-type, early substitution of selenium in the sulfide minerals prevents its concentration in the hydrothermal fluid to the levels for precipitating selenide minerals. Therefore, early sulfide mineral deposition from reduction fluids will not increase the ƒSe2(g/ƒS2(g ratio to form selenide minerals in Te-type deposits of Arinem and Cineam, other than selenium-bearing sulfide mineral such as Se-bearing galena or Se-bearing pyrargyrite-proustite.

  14. Synthesis and properties of silicon nanowire devices

    Science.gov (United States)

    Byon, Kumhyo

    Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed

  15. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  16. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Science.gov (United States)

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  17. Extreme Pressure Synergistic Mechanism of Bismuth Naphthenate and Sulfurized Isobutene Additives

    Science.gov (United States)

    Xu, Xin; Hu, Jianqiang; Yang, Shizhao; Xie, Feng; Guo, Li

    A four-ball tester was used to evaluate the tribological performances of bismuth naphthenate (BiNap), sulfurized isobutene (VSB), and their combinations. The results show that the antiwear properties of BiNap and VSB are not very visible, but they possess good extreme pressure (EP) properties, particularly sulfur containing bismuth additives. Synergistic EP properties of BiNap with various sulfur-containing additives were investigated. The results indicate that BiNap exhibits good EP synergism with sulfur-containing additives. The surface analytical tools, such as X-ray photoelectron spectrometer (XPS) scanning electron microscope (SEM) and energy dispersive X-ray (EDX), were used to investigate the topography, composition contents, and depth profile of some typical elements on the rubbing surface. Smooth topography of wear scar further confirms that the additive showed good EP capacities, and XPS and EDX analyzes indicate that tribochemical mixed protective films composed of bismuth, bismuth oxides, sulfides, and sulfates are formed on the rubbing surface, which improves the tribological properties of lubricants. In particular, a large number of bismuth atoms and bismuth sulfides play an important role in improving the EP properties of oils.

  18. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

    CERN Document Server

    Mishra, S K; Jepsen, O

    1997-01-01

    The electronic structures of the two thermoelectric materials Bi sub 2 Te sub 3 and Bi sub 2 Se sub 3 are studied using density-functional theory with the spin - orbit interaction included. The electron states in the gap region and the chemical bonding can be described in terms of pp sigma interaction between the atomic p orbitals within the 'quintuple' layer. For Bi sub 2 Se sub 3 , we find both the valence-band maximum as well as the conduction-band minimum, each with a nearly isotropic effective mass, to occur at the zone centre in agreement with experimental results. For Bi sub 2 Te sub 3 , we find that the six valleys for the valence-band maximum are located in the mirror planes of the Brillouin zone and they have a highly anisotropic effective mass, leading to an agreement between the de Haas-van Alphen data for the p-doped samples and the calculated Fermi surface. The calculated conduction band, however, has only two minima, instead of the six minima indicated from earlier experiments. The calculated S...

  19. Measured and evaluated neutron cross sections of elemental bismuth

    International Nuclear Information System (INIS)

    Smith, A.; Guenther, P.; Smith, D.; Whalen, J.; Howerton, R.

    1980-04-01

    Neutron total cross sections of elemental bismuth are measured with broad resolution from 1.2 to 4.5 MeV to accuracies of approx. = 1%. Neutron-differential-elastic-scattering cross sections of bismuth are measured from 1.5 to 4.0 MeV at incident neutron energy intervals of approx.< 0.2 MeV over the scattered-neutron angular range approx. = 20 to 160 deg. Differential neutron cross sections for the excitation of observed states in bismuth at 895 +- 12, 1606 +- 14, 2590 +- 15, 2762 +- 29, 3022 +- 21, and 3144 +- 15 keV are determined at incident neutron energies up to 4.0 MeV. An optical-statistical model is deduced from the measured values. This model, the present experimental results, and information available elsewhere in the literature are used to construct a comprehensive evaluated nuclear data file for elemental bismuth in the ENDF format. The evaluated file is particularly suited to the neutronic needs of the fusion-fission hybrid designer. 87 references, 10 figures, 6 tables

  20. Development of planar waveguides in zinc telluride

    International Nuclear Information System (INIS)

    Valette, Serge

    1977-02-01

    Zinc telluride (ZnTe) is one of the most attractive semi-conductors for monolithic integrated optics. In this study, the general characteristics of the planar optical waveguides achieved by implantation of light ions in ZnTe are investigated. Different aspects of prism-coupling and coherent light guiding have been taken up theoretically and experimentally. Some assumptions about the physical origin of these structures are discussed in order to explain all these results and the weak losses which have been measured. [fr

  1. Nanowire Photovoltaic Devices

    Science.gov (United States)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  2. Effectiveness of ranitidine bismuth citrate and proton pump inhibitor ...

    African Journals Online (AJOL)

    Effectiveness of ranitidine bismuth citrate and proton pump inhibitor based triple therapies of Helicobacter pylori in Turkey. ... Results: When we look at the eradication rates of the treatment groups, only two groups (ranitidine bismuth citrate and rabeprazole groups) had eradication rates greater than 80%, both at intention to ...

  3. Prognostic Value of Bismuth Typing and Modified T-stage in Hilar Cholangiocarcinoma

    Directory of Open Access Journals (Sweden)

    Shengen Yi

    2015-01-01

    Conclusion: The majority of our patients with HCC were characterized as Subtype IV in Bismuth typing and Stage T3 in modified T-stage. Both Bismuth typing and modified T-stage showed prognostic value in HCC. Compared with Bismuth typing, modified T-stage is a better indicator of the resectability of HCC.

  4. Emulsion liquid membrane for selective extraction of bismuth from nitrate medium

    International Nuclear Information System (INIS)

    Mokhtari, Bahram; Pourabdollah, Kobra

    2013-01-01

    The novelty of this work is the selective extraction of bismuth ions from nitrate medium by emulsion liquid membrane. Di(2-ethylhexyl)phosphoric acid was used as extractant of bismuth ions from nitrate medium by emulsion liquid membrane, and Triton X-100 was used as the biodegradable surfactant in n-pentanol n-pentanol bulk membrane. The extraction of bismuth ions was evaluated by the yield of extraction. The experimental parameters were evaluated and were optimized. They included the ratio of di(2-ethylhexyl)phosphoric acid concentration to the concentration of /Triton X-100 concentration (1.0 : 0.5% w/w), nature of diluents (n-pentanol), nature and concentration of the stripping solution (sulfuric acid, 0.5M), stirring speed (1,800 rpm) and equilibrium time of extraction (20min), initial feed solution of bismuth (350 ppm) and the volume ratio of the internal stripping phase to the membrane phase (14 times). The experimental parameters of kinetic extraction revealed that the bismuth ions were extracted at 100% 97%

  5. Emulsion liquid membrane for selective extraction of bismuth from nitrate medium

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Bahram; Pourabdollah, Kobra [Islamic Azad University, Shahreza (Iran, Islamic Republic of)

    2013-07-15

    The novelty of this work is the selective extraction of bismuth ions from nitrate medium by emulsion liquid membrane. Di(2-ethylhexyl)phosphoric acid was used as extractant of bismuth ions from nitrate medium by emulsion liquid membrane, and Triton X-100 was used as the biodegradable surfactant in n-pentanol n-pentanol bulk membrane. The extraction of bismuth ions was evaluated by the yield of extraction. The experimental parameters were evaluated and were optimized. They included the ratio of di(2-ethylhexyl)phosphoric acid concentration to the concentration of /Triton X-100 concentration (1.0 : 0.5% w/w), nature of diluents (n-pentanol), nature and concentration of the stripping solution (sulfuric acid, 0.5M), stirring speed (1,800 rpm) and equilibrium time of extraction (20min), initial feed solution of bismuth (350 ppm) and the volume ratio of the internal stripping phase to the membrane phase (14 times). The experimental parameters of kinetic extraction revealed that the bismuth ions were extracted at 100% 97%.

  6. Influence of bismuth on structural, elastic and spectroscopic properties of Nd{sup 3+} doped Zinc–Boro-Bismuthate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Gaurav; Sontakke, Atul D.; Karmakar, P.; Biswas, K.; Balaji, S.; Saha, R.; Sen, R.; Annapurna, K., E-mail: annapurnak@cgcri.res.in

    2014-05-01

    The present investigation reports, influence of bismuth addition on structural, elastic and spectral properties of [(99.5−x) {4ZnO−3B_2O_3}−0.5Nd{sub 2}O{sub 3}−x Bi{sub 2}O{sub 3} where x=0, 5, 10, 20, 30, 40, 50 and 60] glasses. The measured FTIR reflectance spectra facilitated a thorough insight of methodical modifications that are arising in the glass structure from borate (build by BO{sub 3} and BO{sub 4} units) to bismuthate (BiO{sub 3} and BiO{sub 6} units) network due to the increase of bismuth content ensuing with a steady decrease in host phonon energy (ν{sub ph}). The elastic properties estimated from measured longitudinal and shear ultrasonic velocities (U{sub L} and U{sub s}) demonstrated the reduction in network rigidity of glasses on Bi{sub 2}O{sub 3} inclusion. The three phenomenological Judd–Ofelt intensity parameters (Ω{sub 2,4,6}) were obtained from recorded absorption spectra of Nd{sup 3+} ions in these glasses and have been used to predict radiative properties as a function of variation in bismuth content. The reduced host phonon energy and high optical basicity effect due to Bi{sub 2}O{sub 3} incorporation remarkably improved the Nd{sup 3+} luminescence properties such as emission intensity, quantum yield and emission cross-section. The quantum yield showed a strong increase from mere 16% in Zinc–Borate glass to almost 73% in 60 mol% Bi{sub 2}O{sub 3} containing glass. Similarly, the emission cross-section for Nd{sup 3+4}F{sub 3/2}→{sup 4}I{sub 11/2} laser transition raised from 2.43×10{sup −20} cm{sup 2} to 3.95×10{sup −20} cm{sup 2} in studied concentration suggesting a strong improvement in Nd{sup 3+} laser spectroscopic properties in Zinc–Boro-Bismuthate glass. These materials may be promising for compact solid state infrared lasers. - Highlights: • Continuous structural changes associated with reduction in host phonon energy by Bi{sub 2}O{sub 3} inclusion. • Ultrasonic velocity study revealed reduced Debye

  7. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  8. Optimization of the Mechanical and Electrical Performance of a Thermoelectric Module

    DEFF Research Database (Denmark)

    Sarhadi, Ali; Bjørk, Rasmus; Pryds, Nini

    2015-01-01

    Finite element (FE) simulation of a thermoelectric (TE) module was conducted to optimize its geometrical dimensions in terms of mechanical reliability and performance. The TE module consisted of bismuth telluride, nand p-type legs. The geometrical dimensions of the module, i.e. leg length and leg...

  9. Functionalised Silver Nanowire Structures

    International Nuclear Information System (INIS)

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  10. Zerovalent bismuth nanoparticles inhibit Streptococcus mutans growth and formation of biofilm

    Directory of Open Access Journals (Sweden)

    Hernandez-Delgadillo R

    2012-04-01

    Full Text Available Rene Hernandez-Delgadillo1, Donaji Velasco-Arias2, David Diaz2, Katiushka Arevalo-Niño1, Marianela Garza-Enriquez1, Myriam A De la Garza-Ramos1, Claudio Cabral-Romero11Instituto de Biotecnologia, Centro de Investigacion y Desarrollo en Ciencias de la Salud, CIDICS, Facultad de Odontologia, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, Nuevo Leon, 2Facultad de Quimica, Universidad Nacional Autonoma de Mexico, Distrito Federal, MexicoBackground and methods: Despite continuous efforts, the increasing prevalence of resistance among pathogenic bacteria to common antibiotics has become one of the most significant concerns in modern medicine. Nanostructured materials are used in many fields, including biological sciences and medicine. While some bismuth derivatives has been used in medicine to treat vomiting, nausea, diarrhea, and stomach pain, the biocidal activity of zerovalent bismuth nanoparticles has not yet been studied. The objective of this investigation was to analyze the antimicrobial activity of bismuth nanoparticles against oral bacteria and their antibiofilm capabilities.Results: Our results showed that stable colloidal bismuth nanoparticles had 69% antimicrobial activity against Streptococcus mutans growth and achieved complete inhibition of biofilm formation. These results are similar to those obtained with chlorhexidine, the most commonly used oral antiseptic agent. The minimal inhibitory concentration of bismuth nanoparticles that interfered with S. mutans growth was 0.5 mM.Conclusion: These results suggest that zerovalent bismuth nanoparticles could be an interesting antimicrobial agent to be incorporated into an oral antiseptic preparation.Keywords: zerovalent bismuth nanoparticles, antimicrobial agent, biofilm, Streptococcus mutans

  11. Topological insulator nanowires and nanowire hetero-junctions

    Science.gov (United States)

    Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

    2014-03-01

    The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

  12. On the origin of near-IR luminescence in SiO{sub 2} glass with bismuth as the single dopant. Formation of the photoluminescent univalent bismuth silanolate by SiO{sub 2} surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Romanov, A.N., E-mail: alexey.romanov@list.ru; Haula, E.V.; Shashkin, D.P.; Vtyurina, D.N.; Korchak, V.N.

    2017-03-15

    Near infrared photoluminescent bismuth(I) silanolate centers ((≡Si-O){sub 3}Si–O-Bi) were prepared on the surface of SiO{sub 2} xerogel, by the treatment in the vapors of bismuth(I) chloride. The optical properties of these groups are almost identical to that of photoluminescent centers in the bulk SiO{sub 2} glasses with bismuth as the single dopant. - Highlights: • univalent bismuth silanolate can be prepared on SiO{sub 2} surface by treatment in BiCl vapors. • univalent bismuth silanolate is responsible for NIR photoluminescence in Bi-doped SiO{sub 2} glass. • univalent bismuth silanolate is the active center in laser, operating on Bi-doped SiO{sub 2} fiber.

  13. Nanowire structures and electrical devices

    Science.gov (United States)

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  14. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  15. Fabrication of multilayer nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  16. Fabrication of multilayer nanowires

    International Nuclear Information System (INIS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  17. Bismuth Passivation Technique for High-Resolution X-Ray Detectors

    Science.gov (United States)

    Chervenak, James; Hess, Larry

    2013-01-01

    The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

  18. TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

    Science.gov (United States)

    Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

    2017-12-01

    Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

  19. Synthesis and structural characterization of Ce-doped bismuth titanate

    International Nuclear Information System (INIS)

    Pavlovic, Nikolina; Srdic, Vladimir V.

    2009-01-01

    Ce-modified bismuth titanate nanopowders Bi 4-x Ce x Ti 3 O 12 (x ≤ 1) have been synthesized using a coprecipitation method. DTA/TG, FTIR, XRD, SEM/EDS and BET methods were used in order to investigate the effect of Ce-substitution on the structure, morphology and sinterability of the obtained powders. The phase structure investigation revealed that after calcinations at 600 deg. C powder without Ce addition exhibited pure bismuth titanate phase; however, powders with Ce (x = 0.25, 0.5 and 0.75) had bismuth titanate pyrochlore phase as the second phase. The strongest effect of Ce addition on the structure was noted for the powder with the highest amount of Ce (x = 1) having a cubic pyrochlore structure. The presence of pure pyrochlore phase was explained by its stabilization due to the incorporation of cerium ions in titanate structure. Ce-modified bismuth titanate ceramic had a density over 95% of theoretical density and the fracture in transgranular manner most probably due to preferable distribution of Ce in boundary region

  20. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric

  1. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

  2. Short-term static corrosion tests in lead-bismuth

    Science.gov (United States)

    Soler Crespo, L.; Martín Muñoz, F. J.; Gómez Briceño, D.

    2001-07-01

    Martensitic steels have been proposed to be used as structural materials and as spallation target window in hybrid systems devoted to the transmutation of radioactive waste of long life and high activity. However, their compatibility with lead-bismuth in the operating conditions of these systems depends on the existence of a protective layer such as an oxide film. The feasibility of forming and maintaining an oxide layer or maintaining a pre-oxidised one has been studied. Martensitic steel F82Hmod. (8% Cr) has been tested in lead-bismuth under static and isothermal conditions at 400°C and 600°C. In order to study the first stages of the interaction between the steel and the eutectic, short-term tests (100 and 665 h) have been carried out. Pre-oxidised and as-received samples have been tested in atmospheres with different oxidant potential. For low oxygen concentration in lead-bismuth due to unexpected oxygen consumption in the experimental device, dissolution of as-received F82Hmod. occurs and pre-oxidation does not prevent the material dissolution. For high oxygen concentration, the pre-oxidation layer seems to improve the feasibility of protecting stainless steels controlling the oxygen potential of lead-bismuth with a gas phase.

  3. Short-term static corrosion tests in lead-bismuth

    International Nuclear Information System (INIS)

    Soler Crespo, L.; Martin Munoz, F.J.; Gomez Briceno, D.

    2001-01-01

    Martensitic steels have been proposed to be used as structural materials and as spallation target window in hybrid systems devoted to the transmutation of radioactive waste of long life and high activity. However, their compatibility with lead-bismuth in the operating conditions of these systems depends on the existence of a protective layer such as an oxide film. The feasibility of forming and maintaining an oxide layer or maintaining a pre-oxidised one has been studied. Martensitic steel F82Hmod. (8% Cr) has been tested in lead-bismuth under static and isothermal conditions at 400 o C and 600 o C. In order to study the first stages of the interaction between the steel and the eutectic, short-term tests (100 and 665 h) have been carried out. Pre-oxidised and as-received samples have been tested in atmospheres with different oxidant potential. For low oxygen concentration in lead-bismuth due to unexpected oxygen consumption in the experimental device, dissolution of as-received F82Hmod. occurs and pre-oxidation does not prevent the material dissolution. For high oxygen concentration, the pre-oxidation layer seems to improve the feasibility of protecting stainless steels controlling the oxygen potential of lead-bismuth with a gas phase

  4. Electrochemically grown rough-textured nanowires

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  5. Kelvin probe studies of cesium telluride photocathode for AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Wisniewski, Eric E., E-mail: ewisniew@anl.gov [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Velazquez, Daniel [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Yusof, Zikri, E-mail: zyusof@hawk.iit.edu [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Spentzouris, Linda; Terry, Jeff [Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Sarkar, Tapash J. [Rice University, 6100 Main, Houston, TX 77005 (United States); Harkay, Katherine [Accelerator Science Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States)

    2013-05-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (≈50nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating. -- Highlights: ► The correlation between Quantum Efficiency (QE) and work function. ► How QE and work function evolve together. ► Rejuvenation of the photocathode via heating and the effect on work function. ► The effects on the work function due to exposure to UV light.

  6. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  7. Mechanism of manganese (mono and di) telluride thin-film formation and properties

    Science.gov (United States)

    Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

    2007-03-01

    Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

  8. Electronic Properties of Tin and Bismuth from Angular Correlation of Annihilation Photons

    DEFF Research Database (Denmark)

    Mogensen, O.E.; Trumpy, Georg

    1969-01-01

    ) deformed bismuth. For both metals, the single-crystal angular-correlation curves lie near to the free-electron parabola. The tin curves show more anisotropy than the bismuth curves. An important result is the clear anisotropy found in the high-momentum part of the curves—the tails—for both metals. Little......A linear slit setup has been used to obtain results of angular-correlation measurements in (a) tin single crystals in three orientations: [001], [100], and [110], (b) bismuth single crystals in four orientations: [111], [100], [1¯10], and [2¯1¯1], (c) solid and liquid tin and bismuth, and (d...... of the liquid-metal curves are smaller and of another form than the tails of polycrystalline curves; no Gaussian with only one adjustable constant factor can give a fit to both tails. No useful method for interpreting liquid-metal angular-correlation curves seems to exist. Two deformed bismuth samples gave...

  9. Platinum-Bismuth Bimetallic Catalysts: Synthesis, Characterization and Applications

    OpenAIRE

    Saucedo, Jose A, Jr; Xiao, Yang; Varma, Arvind

    2015-01-01

    Bimetallic catalysts have been explored and shown to exhibit unique characteristics which are not present in monometallic catalysts. Platinum is well known as an effective catalyst for oxidation and reduction reactions, and it can be made more effective when bismuth is introduced as a promotor. Thus, the effectiveness of the Pt-Bi catalyst was demonstrated in prior work. What is not clear, however, is the mechanism behind the catalyst function; why addition of bismuth to platinum decreases de...

  10. Study on corrosion test techniques in lead bismuth eutectic flow. Joint research report in JFY2002

    International Nuclear Information System (INIS)

    Takahashi, Minoru; Sekimoto, Hiroshi

    2003-03-01

    The evaluation of corrosion behaviors of core and structural materials in lead bismuth eutectic is one of the key issues for the utilization of lead bismuth eutectic as a coolant of the primary loops of lead bismuth cooled fast breeder reactors (FBRs) and the intermediate heat transport media of new-type steam generators of the sodium cooled FBRs. The purpose of the present study is to establish corrosion test techniques in lead bismuth eutectic flow. The techniques of steel corrosion test and oxygen control in flowing lead bismuth eutectic, and the technologies of a lead bismuth flow test at high temperature and high velocity were developed through corrosion test using a lead bismuth flow test loop of the Tokyo Institute of Technology in JFY2002. The major results are summarized as follows: (1) Techniques of fabrication, mount and rinse of corrosion specimens, measurement method of weight loss, and SEM/EDX analysis method have been established through lead bismuth corrosion test. (2) Weight losses were measured, corrosion and lead bismuth-adhered layers and eroded parts were observed in two 1000 hr-corrosion tests, and the results were compared with each other for twelve existing steels including ODS, F82H and SUH-3. (3) An oxygen sensor made of zirconia electrolyte structurally resistant to thermal stress and thermal shock was developed and tested in the lead bismuth flow loop. Good performance has been obtained. (4) An oxygen control method by injecting argon and hydrogen mixture gas containing steam into lead bismuth was applied to the lead bismuth flow loop, and technical issues for the development of the oxygen control method were extracted. (5) Technical measures for freezing and leakage of lead bismuth in the flow loop were accumulated. (6) Technical measures for flow rate decrease/blockage due to precipitation of oxide and corrosion products in a low temperature section of the lead bismuth flow loop were accumulated. (7) Electromagnetic flow meters with MI

  11. Optical properties of thermally reduced bismuth-doped sodium aluminosilicate glasses

    DEFF Research Database (Denmark)

    Nielsen, K.H.; Smedskjær, Morten Mattrup; Yue, Yuanzheng

    Heat-treatment of multivalent ion containing glasses in a hydrogen atmosphere may cause both reduction of the multivalent ions and ionic inward diffusion, resulting in improved glass properties. Bismuth-doped glasses are also interesting objects not only concerning the reduction induced diffusion...... pressure of hydrogen. Here, we present results on the effect of the heat-treatment on the optical properties of bismuth-doped sodium aluminosilicate glasses.......Heat-treatment of multivalent ion containing glasses in a hydrogen atmosphere may cause both reduction of the multivalent ions and ionic inward diffusion, resulting in improved glass properties. Bismuth-doped glasses are also interesting objects not only concerning the reduction induced diffusion...

  12. Results of metallographical diagnostic examination of Navy half-watt thermoelectric converters degraded by accelerated tests

    International Nuclear Information System (INIS)

    Rosell, F.E. Jr.; Rouklove, P.G.

    1977-01-01

    To verify the 15-year reliability of the Navy half-watt radioisotope thermoelectric generator (RTG), bismuth--telluride thermoelectric converters were submitted to testing at high temperatures which accelerated the degradation and caused failure of the converters. Metallographic diagnostic examination of failed units verified failure mechanisms. Results of diagnostic examinations are presented

  13. Self-Powered Functional Device Using On-Chip Power Generation

    KAUST Repository

    Hussain, Muhammad Mustafa

    2012-01-26

    An apparatus, system, and method for a self-powered device using on-chip power generation. In some embodiments, the apparatus includes a substrate, a power generation module on the substrate, and a power storage module on the substrate. The power generation module may include a thermoelectric generator made of bismuth telluride.

  14. Instrument for measuring metal-thermoelectric semiconductor contact resistence

    International Nuclear Information System (INIS)

    Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

    1979-02-01

    An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

  15. Self-Powered Functional Device Using On-Chip Power Generation

    KAUST Repository

    Hussain, Muhammad Mustafa

    2012-01-01

    An apparatus, system, and method for a self-powered device using on-chip power generation. In some embodiments, the apparatus includes a substrate, a power generation module on the substrate, and a power storage module on the substrate. The power generation module may include a thermoelectric generator made of bismuth telluride.

  16. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  17. Bismuth ferrite as low-loss switchable material for plasmonic waveguide modulator

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

    2014-01-01

    We propose new designs of plasmonic modulators, which can beused for dynamic signal switching in photonic integrated circuits. We studyperformance of a plasmonic waveguide modulator with bismuth ferrite as atunable material. The bismuth ferrite core is sandwiched between metalplates (metal...

  18. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    International Nuclear Information System (INIS)

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  19. Rapid semi-quantitative determination of bismuth in minerals using ascending paper chromatography (1961)

    International Nuclear Information System (INIS)

    Agrinier, H.

    1961-01-01

    The bismuth is separated by a solvent made up of acetone, water, and hydrofluoric and hydrochloric acids. The bismuth is developed with dimercapto-2.5 thio-diazole-1.3.4 and ammonium sulphide. The use of this method for the detection of bismuth in minerals makes it possible to determine the metal at a concentration of 5 x 10 -6 . (author) [fr

  20. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  1. Characterization of bismuth nanospheres deposited by plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, M., E-mail: cscientific2@aec.org.sy [IBA Laboratory, Chemistry Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic); Mrad, O. [Chemistry Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic)

    2015-02-14

    A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed.

  2. Characterization of bismuth nanospheres deposited by plasma focus device

    International Nuclear Information System (INIS)

    Ahmad, M.; Al-Hawat, Sh.; Akel, M.; Mrad, O.

    2015-01-01

    A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed

  3. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  4. Chemical structure of bismuth compounds determines their gastric ulcer healing efficacy and anti-Helicobacter pylori activity.

    Science.gov (United States)

    Sandha, G S; LeBlanc, R; Van Zanten, S J; Sitland, T D; Agocs, L; Burford, N; Best, L; Mahoney, D; Hoffman, P; Leddin, D J

    1998-12-01

    The recognition of the role of Helicobacter pylori in the pathogenesis of peptic ulcer disease has led to renewed interest in bismuth pharmacology since bismuth compounds have both anti-Helicobacter pylori and ulcer healing properties. The precise chemical structure of current bismuth compounds is not known. This has hindered the development of new and potentially more efficacious formulations. We have created two new compounds, 2-chloro-1,3-dithia-2-bismolane (CDTB) and 1,2-[bis(1,3-dithia-2-bismolane)thio]ethane (BTBT), with known structure. In a rat model of gastric ulceration, BTBT was comparable to, and CDTB was significantly less effective than colloidal bismuth subcitrate in healing cryoprobe-induced ulcers. However, both BTBT and CDTB inhibited H. pylori growth in vitro at concentrations <1/10 that of colloidal bismuth subcitrate. The effects on ulcer healing are not mediated by suppression of acid secretion, pepsin inhibition, or prostaglandin production. Since all treated animals received the same amount of elemental bismuth, it appears that the efficacy of bismuth compounds varies with compound structure and is not simply dependent on the delivery of bismuth ion. Because the structure of the novel compounds is known, our understanding of the relationship of bismuth compound structure and to biologic activity will increase. In the future it may be possible to design other novel bismuth compounds with more potent anti-H. pylori and ulcer healing effects.

  5. Quantum optics with nanowires (Conference Presentation)

    Science.gov (United States)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  6. Use of Russian technology of ship reactors with lead-bismuth coolant in nuclear power

    International Nuclear Information System (INIS)

    Zrodnikov, A.V.; Chitaykin, V.I.; Gromov, B.F.; Grigoryv, O.G.; Dedoul, A.V.; Toshinsky, G.I.; Dragunov, Yu.G.; Stepanov, V.S.

    2000-01-01

    The experience of using lead-bismuth coolant in Russian nuclear submarine reactors has been presented. The fundamental statements of the concept of using the reactors cooled by lead-bismuth alloy in nuclear power have been substantiated. The results of developments for using lead bismuth coolant in nuclear power have been presented. (author)

  7. Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

    International Nuclear Information System (INIS)

    Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

    2006-01-01

    We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

  8. Application of cadmium telluride detectors to high energy computed tomography

    International Nuclear Information System (INIS)

    Glasser, F.; Thomas, G.; Cuzin, M.; Verger, L.

    1991-01-01

    15 years ago, Cadmium Telluride detectors have been investigated in our laboratory as possible detectors for medical scanners [1]. Today most of these machines are using high pressure Xenon gas as multicells detectors, BGO or CdWO 4 scintillators for industrial computerized tomography. Xenon gas detectors are well suited for detection of 100 KeV X-rays and enables to build 1000 cells homogeneous detector with a dynamic range of 3 decades. BGO and CdWO 4 scintillators, associated with photomultipliers or photodiodes are used for higher energy (400 KeV). They present a low afterglow and a dynamic range of 4 to 5 decades. Non destructive testing of very absorbing objects (eg 2 m diameter solid rocket motor) by X-ray tomography requires much higher energy X-rays (16 MeV) and doses up to 12000 rads/min at 1 meter. For this application Cadmium Telluride detectors operating as photoconductors are well suited. A prototype of tomograph machine, able to scan 0.5 m diameter high density objects has been realized with 25 CdTe detectors (25x15x0.8 mm 3 ). It produces good quality 1024x1024 tomographic images

  9. Corrosion by liquid lead and lead-bismuth: experimental results review and analysis

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jinsuo [Los Alamos National Laboratory

    2008-01-01

    Liquid metal technologies for liquid lead and lead-bismuth alloy are under wide investigation and development for advanced nuclear energy systems and waste transmutation systems. Material corrosion is one of the main issues studied a lot recently in the development of the liquid metal technology. This study reviews corrosion by liquid lead and lead bismuth, including the corrosion mechanisms, corrosion inhibitor and the formation of the protective oxide layer. The available experimental data are analyzed by using a corrosion model in which the oxidation and scale removal are coupled. Based on the model, long-term behaviors of steels in liquid lead and lead-bismuth are predictable. This report provides information for the selection of structural materials for typical nuclear reactor coolant systems when selecting liquid lead or lead bismuth as heat transfer media.

  10. Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance

    CERN Document Server

    Van Scyoc, J M; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

    1999-01-01

    Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

  11. Controlled synthesis of bismuth oxyiodide toward optimization of photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Chenxing; Ma, Zhijun [State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China); Chen, Xiaofeng, E-mail: chenxf@scut.edu.c [Biomaterials Research Institute, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China); He, Xin [School of Applied Physics and Materials, Wuyi University, Jiangmen 529020 (China); Qiu, Jianrong, E-mail: qjr@scut.edu.cn [State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China)

    2016-11-30

    Highlights: • Different bismuth oxyiodide was synthesized. • The hollow Bi{sub 4}O{sub 5}I{sub 2} microspheres was obtained. • Formation mechanism of the hollow structure was discussed in detail. - Abstract: A new investigation on the variation rule of the structure, morphology, chemical composition and photocatalytic performance of bismuth oxyiodide synthesized by solvothermal method as a function of reaction conditions was performed here. The composition and morphology of the product could be determined by X-ray diffraction, thermogravimetric analysis and scanning electron microscopy. The results revealed that the particle size together with content of iodide in bismuth oxyiodide decrease with the increase of the concentration of reaction precursors. Hollow Bi{sub 4}O{sub 5}I{sub 2} microsphere with specific surface area as high as 120.88 m{sup 2} g{sup −1} can be easily synthesized when the concentration of the reaction precursors finally increased to 62.5 mM. Photocatalytic water purification performance of the as-prepared samples was evaluated by using Rhodamine B (RhB) as a model contaminant. The results revealed that the hollow Bi{sub 4}O{sub 5}I{sub 2} exhibited the best performance among all the bismuth oxyodide synthesized here for the degradation of RhB under visible light irradiation. Meanwhile, the formation mechanism of the hierarchical hollow structure of bismuth oxyiodide was investigated by the dissolution-recrystallization mechanism.

  12. Characterization and re-activation of oxygen sensors for use in liquid lead-bismuth

    International Nuclear Information System (INIS)

    Kurata, Yuji; Abe, Yuji; Futakawa, Masatoshi; Oigawa, Hiroyuki

    2010-01-01

    Control of oxygen concentration in liquid lead-bismuth is one of the most important tasks to develop accelerator driven systems. In order to improve the reliability of oxygen sensors, re-activation treatments were investigated as well as characterization of oxygen sensors for use in liquid lead-bismuth. The oxygen sensor with a solid electrolyte of yttria-stabilized zirconia and a Pt/gas reference electrode showed almost the same electromotive force values in gas and liquid lead-bismuth, respectively, as the theoretical ones at temperatures above 400 deg. C or 450 deg. C. After long-term use of 6500 h, the outputs of the sensor became incorrect in liquid lead-bismuth. The state of the sensor that indicated incorrect outputs could not be recovered by cleaning with a nitric acid. However, it was found that the oxygen sensor became a correct sensor indicating theoretical values in liquid lead-bismuth after re-activation by the Pt-treatment of the outer surface of the sensor.

  13. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-05-16

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  14. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Science.gov (United States)

    Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

    2016-05-01

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  15. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    Directory of Open Access Journals (Sweden)

    Hernandez-Delgadillo R

    2013-04-01

    Full Text Available Rene Hernandez-Delgadillo,1 Donaji Velasco-Arias,3 Juan Jose Martinez-Sanmiguel,2 David Diaz,3 Inti Zumeta-Dube,3 Katiushka Arevalo-Niño,1 Claudio Cabral-Romero2 1Facultad de Ciencias Biológicas, Instituto de Biotecnologia, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, Mexico; 2Facultad de Odontología, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, México; 3Facultad de Quimica, Universidad Nacional Autonoma de Mexico, UNAM, Distrito Federal, México Abstract: Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85% and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized

  16. Gamma-ray peak shapes from cadmium zinc telluride detectors

    Energy Technology Data Exchange (ETDEWEB)

    Namboodiri, M.N.; Lavietes, A.D.; McQuaid, J.H.

    1996-09-01

    We report the results of a study of the peak shapes in the gamma spectra measured using several 5 x 5 x 5 mm{sup 3} cadmium zinc telluride (CZT) detectors. A simple parameterization involving a Gaussian and an exponential low energy tail describes the peak shapes sell. We present the variation of the parameters with gamma energy. This type of information is very useful in the analysis of complex gamma spectra consisting of many peaks.

  17. Bismuth Modified Carbon-Based Electrodes for the Determination of Selected Neonicotinoid Insecticides

    Directory of Open Access Journals (Sweden)

    Marko Rodić

    2011-05-01

    Full Text Available Two types of bismuth modified electrodes, a bismuth-film modified glassy carbon (BiF-GCE and a bismuth bulk modified carbon paste, were applied for the determination of selected nitroguanidine neonicotinoid insecticides. The method based on an ex situ prepared BiF-GCE operated in the differential pulse voltammetric (DPV mode was applied to determine clothianidin in the concentration range from 2.5 to 23 μg cm−3 with a relative standard deviation (RSD not exceeding 1.5%. The tricresyl phosphate-based carbon paste electrodes (TCP-CPEs, bulk modified with 5 and 20 w/w% of bismuth, showed a different analytical performance in the determination of imidacloprid, regarding the peak shape, potential window, and noise level. The TCP-CPE with 5% Bi was advantageous, and the developed DPV method based on it allowed the determination in the concentration range from 1.7 to 60 μg cm−3 with an RSD of 2.4%. To get a deeper insight into the morphology of the bismuth-based sensor surfaces, scanning electron microscopic measurements were performed of both the surface film and the bulk modified electrodes.

  18. Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

    Science.gov (United States)

    An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

    2018-07-01

    Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi2Te3) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m‑1K‑2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi2Te3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

  19. Diffusion of iron in β-iron telluride (Fe1.12Te) by Moessbauer spectroscopy and tracer method

    International Nuclear Information System (INIS)

    Magara, Masaaki; Tsuji, Toshihide; Naito, Keiji

    1993-01-01

    The diffusion coefficient of iron in a β-iron telluride (Fe 1.12 Te) polycrystalline sample was measured by Moessbauer diffusional line broadening method which relates to the collapse of coherence in gamma-ray photon by the atomic jump at local sites. The diffusion coefficient of iron along the c-axis in nearly single crystal of β-iron telluride was also measured by tracer technique which shows the results of an atom transport in long distance. The activation energies for the diffusion of iron in Fe 1.12 Te obtained by the Moessbauer spectroscopy and the tracer method were 91.5±5.4 and 106±23 kJ/mol, respectively. The diffusion coefficients of iron in β-iron telluride obtained by Moessbauer line broadening are in fair agreement with the values averaged from that along c-axis obtained by tracer method and that along a- and b-axes obtained from reaction rate constant between iron and tellurium by the previous study of the present authors. (orig.)

  20. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  1. XAFS studies of nickel-doped lead telluride

    International Nuclear Information System (INIS)

    Radisavljevic, Ivana; Novakovic, Nikola; Ivanovic, Nenad; Romcevic, Nebojsa; Manasijevic, Miodrag; Mahnke, Heinz-Eberhard

    2009-01-01

    The problem of impurities and defect states in lead telluride-based semiconductors is of crucial importance for their practical applications. X-ray absorption fine structure (XAFS) techniques are capable to address some of the key issues regarding impurities position, their valent state, as well as the local structural changes of the host lattice in the immediate surrounding of the impurity atoms. In this paper we present the results of the Ni K-absorption edge XAFS studies of Ni-doped PbTe at different temperatures. Analysis of near edge and extended XAFS regions of the measured spectra provided information about exact local environment and lattice ordering around Ni atoms.

  2. Inexpensive laser-induced surface modification in bismuth thin films

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, A. Reyes [Facultad de Ciencias, Universidad Autónoma del Estado de México, Carretera Toluca, Ixtlahuaca Kilómetro 15.5, C.P. 50200 Edo. de México (Mexico); Hautefeuille, M., E-mail: mathieu_h@ciencias.unam.mx [Facultad de Ciencias, Universidad Nacional Autónoma de México, Avenida Universidad 3000, Circuito Exterior S/N, Coyoacán, Ciudad Universitaria, C.P. 04510 D.F. Mexico (Mexico); García, A. Esparza [Fotofísica y Películas Delgadas, Departamento de Tecnociencias, CCADET-UNAM, Circuito exterior s/n C.P. 04510 Cd. Universitaria, D.F. Mexico (Mexico); Mejia, O. Olea [Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco, Km 14.5, Unidad El Rosedal, 50200 San Cayetano, Estado de México (Mexico); López, M.A. Camacho [Facultad de Química, Universidad Autónoma del Estado de México, Tollocan s/n, esq. Paseo Colón, Toluca, Estado de México 50110 (Mexico)

    2015-05-01

    Highlights: • Laser-induced microbumps were formed on bismuth films using a simple, low-cost, laser setup. • The patterns, similar to those typically obtained with high-power lasers, were characterized. • Control of laser ablation conditions is critical in the fabrication of surface microbumps. - Abstract: In this work, we present results on texturing a 500 nm thick bismuth film, deposited by sputtering onto a glass slide using a low-cost homemade, near-infrared pulsed laser platform. A 785 nm laser diode of a CD–DVD pickup head was precisely focused on the sample mounted on a motorized two-axis translation stage to generate localized surface microbumps on the bismuth films. This simple method successfully transferred desired micropatterns on the films in a computer-numerical control fashion. Irradiated zones were characterized by atomic force microscopy and scanning electron microscopy. It was observed that final results are strongly dependent on irradiation parameters.

  3. Bioavailability and chronic toxicity of bismuth citrate to earthworm Eisenia andrei exposed to natural sandy soil.

    Science.gov (United States)

    Omouri, Zohra; Hawari, Jalal; Fournier, Michel; Robidoux, Pierre Yves

    2018-01-01

    The present study describes bioavailability and chronic effects of bismuth to earthworms Eisenia andrei using OECD reproduction test. Adult earthworms were exposed to natural sandy soil contaminated artificially by bismuth citrate. Average total concentrations of bismuth in soil recovered by HNO 3 digestion ranged from 75 to 289mg/kg. Results indicate that bismuth decreased significantly all reproduction parameters of Eisenia andrei at concentrations ≥ 116mg/kg. However, number of hatched cocoons and number of juveniles seem to be more sensitive than total number of cocoons, as determined by IC 50 ; i.e., 182, 123 and > 289mg/kg, respectively. Bismuth did not affect Eisenia andrei growth and survival, and had little effect on phagocytic efficiency of coelomocytes. The low immunotoxicity effect might be explained by the involvement of other mechanisms i.e. bismuth sequestered by metal-binding compounds. After 28 days of exposure bismuth concentrations in earthworms tissue increased with increasing bismuth concentrations in soil reaching a stationary state of 21.37mg/kg dry tissue for 243mg Bi/kg dry soil total content. Data indicate also that after 56 days of incubation the average fractions of bismuth available extracted by KNO 3 aqueous solution in soil without earthworms varied from 0.0051 to 0.0229mg/kg, while in soil with earthworms bismuth concentration ranged between 0.310-1.347mg/kg dry soil. We presume that mucus and chelating agents produced by earthworms and by soil or/and earthworm gut microorganisms could explain this enhancement, as well as the role of dermal and ingestion routes of earthworms uptake to soil contaminant. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  5. Shape-controlled solvothermal synthesis of bismuth subcarbonate nanomaterials

    International Nuclear Information System (INIS)

    Cheng Gang; Yang Hanmin; Rong Kaifeng; Lu Zhong; Yu Xianglin; Chen Rong

    2010-01-01

    Much effort has been devoted to the synthesis of novel nanostructured materials because of their unique properties and potential applications. Bismuth subcarbonate ((BiO) 2 CO 3 ) is one of commonly used antibacterial agents against Helicobacter pylori (H. pylori). Different (BiO) 2 CO 3 nanostructures such as cube-like nanoparticles, nanobars and nanoplates, were fabricated from bismuth nitrate via a simple solvothermal method. The nanostructures were characterized by powder X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). It was found that the solvents and precursors have an influence on the morphologies of (BiO) 2 CO 3 nanostructures. The possible formation mechanism of different (BiO) 2 CO 3 nanostructures fabricated under different conditions was also discussed. - Graphical abstract: Different bismuth subcarbonate ((BiO) 2 CO 3 ) nanostructures were successfully synthesized by a simple solvothermal method. It was found that the solvents and precursors have an influence on the morphologies of (BiO) 2 CO 3 nanostructures.

  6. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    Directory of Open Access Journals (Sweden)

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  7. AB initio energetics of lanthanum substitution in ferroelectric bismuth titanate

    International Nuclear Information System (INIS)

    Shah, S.H.

    2012-01-01

    Density functional theory based electronic structure calculations play a vital role in understanding, controlling and optimizing physical properties of materials at microscopic level. In present study system of interest is bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/)/(BIT) which has wide range of applications such as a high temperature piezoelectric and one of the best material for memory devices. However, it also suffers from serious issues such as oxygen vacancies which degrade its performance as a memory element and piezoelectric material. In this context, the bulk and defect properties of orthorhombic bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) and bismuth lanthanum titanate (Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/)/(BLT, x=0.75) were investigated by using first principles calculations and atomistic thermodynamics. Heats of formation, valid chemical conditions for synthesis, lanthanum substitution energies and oxygen and bismuth vacancy formation energies were computed. The study improves understanding of how native point defects and substitutional impurities influence the ferroelectric properties of these layered perovskite materials. It was found that lanthanum incorporation could occur on either of the two distinct bismuth sites in the structure and that the effect of substitution is to increase the formation energy of nearby native oxygen vacancies. The results provide direct atomistic evidence over a range of chemical conditions for the suggestion that lanthanum incorporation reduces the oxygen vacancy concentration. Oxygen vacancies contribute to ferroelectric fatigue by interacting strongly with domain walls and therefore a decrease in their concentration is beneficial. (orig./A.B.)

  8. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  9. Vertical nanowire architectures

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  10. Diameter-dependent coloration of silver nanowires

    International Nuclear Information System (INIS)

    Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth

    2011-01-01

    Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.

  11. Characteristics of polonium contamination from neutral irradiated lead-bismuth eutectic

    International Nuclear Information System (INIS)

    Miura, T.; Obara, T.; Sekimoto, H.

    2004-01-01

    After neutron capture, bismuth-209 changes to polonium-210 that emits α-particles. Lead-Bismuth eutectic (LBE) in reactor system contaminates the system by polonium. We analyzed adsorbed materials from melted LBE on quartz glass plate. Lead, bismuth and their oxides were confirmed in adsorbed materials. And, we evaluated the baking method in vacuum for removal of polonium and adsorbed materials on quartz glass plate. It was evaluated that it is possible to remove almost all the polonium from the quartz glass plate by baking at temperature more than 300 C. degrees. Unfolding method was applied to calculate polonium distribution in LBE ingot. From measured α-particle pulse height distribution, the polonium distribution in depth of LBE ingot was calculated using quadratic programming code, where response functions are calculated by Monte Carlo method. (authors)

  12. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

    International Nuclear Information System (INIS)

    Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

    2015-01-01

    In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

  13. Corrosion behavior of Si-enriched steels for nuclear applications in liquid lead–bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Kurata, Yuji, E-mail: kurata.yuji@jaea.go.jp [Japan Atomic Energy Agency, Tokai-mura, Ibaraki-ken 319-1195 (Japan)

    2013-06-15

    Highlights: ► The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied. ► The corrosion tests were conducted at the two controlled oxygen levels. ► The Si addition reduces the scale thickness under the high oxygen condition. ► The Si addition has no significant effect under the low oxygen condition. -- Abstract: The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied in order to develop accelerator driven systems for transmutation of long-lived radioactive wastes and lead–bismuth cooled fast reactors. The corrosion tests of 316SS, Si-enriched 316SS, Mod.9Cr–1Mo steel (T91) and Si-enriched T91 were conducted at 550 °C in liquid lead–bismuth at the two controlled oxygen levels. Both the additions of 2.5 wt.% Si to 316SS and 1.5 wt.% Si to T91 had the effect of reducing the thickness of oxide layer in liquid lead–bismuth at the high oxygen concentration (2.5 × 10{sup −5} wt.%). Although the Si addition to 316SS reduced the depth of ferritization caused by Ni dissolution in liquid lead–bismuth at the low oxygen concentration (4.4 × 10{sup −8} wt.%), it could not suppress the ferritization and the penetration of Pb and Bi completely. The Si addition to T91 did not have the effect of preventing the penetration of Pb and Bi in the liquid lead–bismuth at the low oxygen concentration. The oxide scales formed on both Si-enriched steels did not have sufficient corrosion resistance under the low oxygen condition.

  14. Sulfate-reducing bacteria slow intestinal transit in a bismuth-reversible fashion in mice.

    Science.gov (United States)

    Ritz, N L; Lin, D M; Wilson, M R; Barton, L L; Lin, H C

    2017-01-01

    Hydrogen sulfide (H 2 S) serves as a mammalian cell-derived gaseous neurotransmitter. The intestines are exposed to a second source of this gas by sulfate-reducing bacteria (SRB). Bismuth subsalicylate binds H 2 S rendering it insoluble. The aim of this study was to test the hypothesis that SRB may slow intestinal transit in a bismuth-reversible fashion. Eighty mice were randomized to five groups consisting of Live SRB, Killed SRB, SRB+Bismuth, Bismuth, and Saline. Desulfovibrio vulgaris, a common strain of SRB, was administered by gavage at the dose of 1.0 × 10 9 cells along with rhodamine, a fluorescent dye. Intestinal transit was measured 50 minutes after gavage by euthanizing the animals, removing the small intestine between the pyloric sphincter and the ileocecal valve and visualizing the distribution of rhodamine across the intestine using an imaging system (IVIS, Perkin-Elmer). Intestinal transit (n=50) was compared using geometric center (1=minimal movement, 100=maximal movement). H 2 S concentration (n=30) was also measured when small intestinal luminal content was allowed to generate this gas. The Live SRB group had slower intestinal transit as represented by a geometric center score of 40.2 ± 5.7 when compared to Saline: 73.6 ± 5.7, Killed SRB: 77.9 ± 6.9, SRB+Bismuth: 81.0 ± 2.0, and Bismuth: 73.3 ± 4.2 (Pfashion in mice. Our results demonstrate that intestinal transit is slowed by SRB and this effect could be abolished by H 2 S-binding bismuth. © 2016 John Wiley & Sons Ltd.

  15. Advanced bismuth-doped lead-germanate glass for broadband optical gain devices

    International Nuclear Information System (INIS)

    Hughes, M.; Suzuki, T.; Ohishi, Y.

    2008-01-01

    We fabricated a series of glasses with the composition 94.7-χGeO 2 -5Al 2 O 3 -0.3Bi 2 O 3 -χPbO (χ=0-24 mol. %). Characteristic absorption bands of bismuth centered at 500, 700, 800, and 1000 nm were observed. Adding PbO was found to decrease the strength of bismuth absorption. The addition of 3%-4% PbO resulted in a 50% increase in lifetime, a 20-fold increase in quantum efficiency, and a 28-fold increase in the product of emission cross section and lifetime on the 0% PbO composition. We propose that the 800 nm absorption band relates a different bismuth center than the other absorption bands

  16. GEOLOGY OF THE FLORENCIA GOLD – TELLURIDE DEPOSIT (CAMAGÜEY, CUBA AND SOME METALLURGICAL CONSIDERATIONS

    Directory of Open Access Journals (Sweden)

    López K Jesús M.

    2006-12-01

    Full Text Available This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after beneficiation and flotation of samples from these sectors.
    It is shown that gold deposits of the Cretaceous Volcanic Arc of Cuba largely consist of native gold, telluride and pyrite, where arsenopyrite is almost absent. Traces of lead, zinc and cadmium are present in the periphery of the main ore zones.

  17. Methods for synthesizing metal oxide nanowires

    Science.gov (United States)

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  18. Study of barium bismuth titanate prepared by mechanochemical synthesis

    Directory of Open Access Journals (Sweden)

    Lazarević Z.Ž.

    2009-01-01

    Full Text Available Barium-bismuth titanate, BaBi4Ti4O15 (BBT, a member of Aurivillius bismuth-based layer-structure perovskites, was prepared from stoichiometric amounts of barium titanate and bismuth titanate obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. The reaction mechanism of BaBi4Ti4O15 and the preparation and characteristics of BBT ceramic powders were studied using XRD, Raman spectroscopy, particle analysis and SEM. The Bi-layered perovskite structure of BaBi4Ti4O15 ceramic forms at 1100 °C for 4 h without a pre-calcination step. The microstructure of BaBi4Ti4O15 exhibits plate-like grains typical for the Bi-layered structured material and spherical and polygonal grains. The Ba2+ addition leads to changes in the microstructure development, particularly in the change of the average grain size.

  19. Complexometric consequent titration of bismuth-titanium mixtures in the μg-region

    International Nuclear Information System (INIS)

    Schaefer, H.

    1975-01-01

    A quantitative method is described for the determination of microquantities of bismuth and titanium. Both metals are determined complexometrically with EDTA and potentiometric equivalence point indication using a Cu-ion sensitive electrode in a consequent titration. The analysis is conducted as back-titration with standard Cu-solution. The relative error of the determination is 0.8% for bismuth (50-100 μg) and for titanium (10-30 μg) at 1.0%. Under the chosen conditions, it is possible to determine as little as 15 μg bismuth and 5 μg titanium by means of this procedure. (author)

  20. Specificities of reactor coolant pumps units with lead and lead-bismuth coolant

    International Nuclear Information System (INIS)

    Beznosov, A.V.; Anotonenkov, M.A.; Bokov, P.A.; Baranova, V.S.; Kustov, M.S.

    2009-01-01

    The analysis results of impact of lead and lead-bismuth coolants specific properties on the coolants flow features in flow channels of the main and auxiliary circulating pumps are presented. Impossibility of cavitation initiation in flow channels of vane pumps pumping lead and lead-bismuth coolants was demonstrated. The experimental research results of discontinuity of heavy liquid metal coolant column were presented and conditions of gas cavitation initiation in coolant flow were discussed. Invalidity of traditional calculation methods of water and sodium coolants circulation pumps calculations for lead and lead-bismuth coolants circulation pumps was substantiated [ru

  1. Bismuth nanoparticles synthesized by laser ablation in lubricant oils for tribological tests

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Castañeda, M., E-mail: mar.floc@hotmail.com [Universidad Autónoma del Estado de México, Av. Instituto Literario No. 100, Oriente Col. Centro, Toluca, Estado de México C.P. 50000, México (Mexico); Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca s/n, La Marquesa, Ocoyoacac, Edo. de México C.P. 52750, México (Mexico); Camps, E. [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca s/n, La Marquesa, Ocoyoacac, Edo. de México C.P. 52750, México (Mexico); Camacho-López, M. [Universidad Autónoma del Estado de México, Av. Instituto Literario No. 100, Oriente Col. Centro, Toluca, Estado de México C.P. 50000, México (Mexico); Muhl, S. [Instituto de Investigación en Materiales (UNAM), Circuito Exterior, Ciudad Universitaria, Coyoacán, 04510 México, D.F., México (Mexico); and others

    2015-09-15

    Highlights: • Bismuth nanoparticles have been obtained by laser ablation of solids in liquids. • The technique allows controlling the size and concentration of the samples. • Bi np’s in base oils can improve the tribological characteristics of the lubricant. - Abstract: The improvement of the tribological properties of mineral base oils through the addition of bismuth nanoparticles as an additive, together with the idea of obtaining lubricants free of heavy metals, was evaluated. Bismuth nanoparticles were produced directly in the heavy and light viscosity mineral base oils (BS900 and BS6500) using the technique of laser ablation of solids immersed in liquids. Transmission electron microscopy measurements showed the presence of pure bismuth nanoparticles. Small Angle X-ray Scattering (SAXS) measurements showed that the average size of the nanoparticles was between 7 and 65 nm depending on the experimental conditions used. The tribological properties of the base oil with the bismuth nanoparticles additives were evaluated using a four-ball tester. Tests were performed using the base oil with and without Bi nanoparticles. It was observed that the coefficient of friction of the oil decrease with an increasing concentration of the nanoparticles. The results also showed that the wear rate was reduced when the Bi nanoparticle additives were used.

  2. Bismuth nanoparticles synthesized by laser ablation in lubricant oils for tribological tests

    International Nuclear Information System (INIS)

    Flores-Castañeda, M.; Camps, E.; Camacho-López, M.; Muhl, S.

    2015-01-01

    Highlights: • Bismuth nanoparticles have been obtained by laser ablation of solids in liquids. • The technique allows controlling the size and concentration of the samples. • Bi np’s in base oils can improve the tribological characteristics of the lubricant. - Abstract: The improvement of the tribological properties of mineral base oils through the addition of bismuth nanoparticles as an additive, together with the idea of obtaining lubricants free of heavy metals, was evaluated. Bismuth nanoparticles were produced directly in the heavy and light viscosity mineral base oils (BS900 and BS6500) using the technique of laser ablation of solids immersed in liquids. Transmission electron microscopy measurements showed the presence of pure bismuth nanoparticles. Small Angle X-ray Scattering (SAXS) measurements showed that the average size of the nanoparticles was between 7 and 65 nm depending on the experimental conditions used. The tribological properties of the base oil with the bismuth nanoparticles additives were evaluated using a four-ball tester. Tests were performed using the base oil with and without Bi nanoparticles. It was observed that the coefficient of friction of the oil decrease with an increasing concentration of the nanoparticles. The results also showed that the wear rate was reduced when the Bi nanoparticle additives were used

  3. Heat-Pipe Bismuth Laser; Examination of Laser Action at 4722A in Bismuth Vapor

    Science.gov (United States)

    1976-11-01

    11, 15(1975). of Type 6p 3 -6p 2 7s in the Bismuth Atomic Spectrum in Intermediate Coupling," Acta Physica Polonica A47, 231(1975). 19. A.N. Nesmeyanov...Calculated Transit n Probabilities and Lifetimes for the First Excited Configuration np (n+l)s in the Neutral As, Sb and Bi Atoms, " Physica Scripta

  4. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  5. EDITORIAL: Nanowires for energy Nanowires for energy

    Science.gov (United States)

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  6. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  7. Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

    Science.gov (United States)

    Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

    1995-09-01

    Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

  8. Nanowire-decorated microscale metallic electrodes

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

    2008-01-01

    The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

  9. Selective oxidation of propylene to acrolein by silica-supported bismuth molybdate catalysts

    DEFF Research Database (Denmark)

    Duc, Duc Truong; Ha, Hanh Nguyen; Fehrmann, Rasmus

    2011-01-01

    Silica-supported bismuth molybdate catalysts have been prepared by impregnation, structurally characterized and examined as improved catalysts for the selective oxidation of propylene to acrolein. Catalysts with a wide range of loadings (from 10 to 90 wt%) of beta bismuth molybdate (β-Bi2Mo2O9) w...

  10. The reduction of background signal in bismuth germanate scintillators

    International Nuclear Information System (INIS)

    Lewis, T.A.

    1986-07-01

    Bismuth germanate (BGO) is one of several new scintillator materials developed in recent years. It has similar energy resolution (6-8%) to sodium iodide (NaI) but it is non-hygroscopic, has a much better Peak-to-Compton ratio and a stopping power about 2.3 times greater than NaI. For counting activated foils it represents an improvement on NaI for high efficiency counting where the resolution of a germanium spectrometer is not required. Two scintillators bought for this purpose were found to have a higher than expected background signal between 500 keV and 2 MeV which was traced to Bi207, an active isotope of bismuth with a 38 year half-life and not listed as occurring naturally. Reference to the manufacturer showed all crystals to be similarly contaminated. It is speculated that this active isotope arises from cosmic proton activation of associated lead in the ore from which the bismuth is extracted. Although not confirmed rigorously it has been shown that bismuth extracted from ore with a low lead content does not contain Bi207. Scintillators have been manufactured from uncontaminated material and reductions in the background signal of more than an order of magnitude have been achieved. This reduction will be of immediate benefit for monitoring nickel foils (fast flux monitors) activated in zero-energy reactors and should also permit the exploitation of other low probability reactions previously not thought to be feasible. (author)

  11. Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

    International Nuclear Information System (INIS)

    Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

    2011-01-01

    Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

  12. Platinum boride nanowires: Synthesis and characterization

    International Nuclear Information System (INIS)

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  13. Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

    Science.gov (United States)

    Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

    2018-03-01

    The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

  14. Evaluation of the strength and radiopacity of Portland cement with varying additions of bismuth oxide.

    Science.gov (United States)

    Saliba, E; Abbassi-Ghadi, S; Vowles, R; Camilleri, J; Hooper, S; Camilleri, J

    2009-04-01

    To study the effect of addition of various proportions of bismuth oxide on compressive strength and radiopacity of Portland cement. The compressive strength of white Portland cement and cement replaced with 10, 15, 20, 25 and 30% bismuth oxide was evaluated by testing cylinders 6 mm in diameter and 12 mm high. Twelve cylinders were tested for each material under study. The radiopacity of the cements tested was evaluated using an aluminium step-wedge and densitometer. The optical density was compared with the relevant thickness of aluminium (Al). Statistical analysis was performed using Analysis of Variance (ANOVA) with P = 0.05 and Tukey test to perform multiple comparison tests. Various additions of bismuth oxide had no significant effect on the strength of the material when compared with the unmodified Portland cement (P > 0.05). The radiopacity of the cements tested ranged from 2.02 mm Al for Portland cement to 9.79 mm Al for the highest bismuth replacement. Addition of bismuth oxide did not affect the compressive strength of Portland cement. All the bismuth oxide cement mixtures had radio-opacities higher than 3 mm thickness of aluminium.

  15. PREFACE: Synthesis and integration of nanowires

    Science.gov (United States)

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  16. Electrospinning synthesis of superconducting BSCCO nanowires

    International Nuclear Information System (INIS)

    Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

    2013-01-01

    Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

  17. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  18. Magnetostatic Interaction in Fe-Co Nanowires

    Directory of Open Access Journals (Sweden)

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  19. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  20. Flotation atomic absorption determination of bismuth in nonferrous metal alloys

    International Nuclear Information System (INIS)

    Ososkov, V.K.; Plintus, A.M.; Kornelli, M.Eh.; Zakhariya, A.N.; Lozanova, E.V.

    1986-01-01

    Technique of flotation concentration and atomic absorption determination of bismuth microquantities in alloys on the basis of copper and zinc has been developed. Fine-dispersed EhDEh-10P anionite was used as a carrier in flotation concentration. State standard samples (SSS) of brasses and German silver were used as analysed objects. Effect of macrocomponents on the results of bismuth content determination has been studied. Satisfactory coincidence of the results obtained and SSS certificates is shown

  1. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

    Science.gov (United States)

    Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

    2012-01-01

    Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

  4. Oxide layer stability in lead-bismuth at high temperature

    Science.gov (United States)

    Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

    2004-11-01

    Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

  5. Nanowire sensors and arrays for chemical/biomolecule detection

    Science.gov (United States)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  6. Investigation of corrosion, water reaction, polonium evaporation and bismuth resource in liquid metal lead-bismuth technology

    Energy Technology Data Exchange (ETDEWEB)

    Takano, Hideki; Takizuka, Takakazu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Kitano, Teruaki [Mitsui Shipbuilding and Engineering Co. Ltd., Tokyo (Japan)

    2000-10-01

    Lead-bismuth is the first candidate material for liquid metal target find coolant of fueled blanket system in accelerator-driven system (ADS) studied at JAERI. Advantages of the lead-bismuth utilization are non-active material, very low capture cross section, low melting point of 125degC and high boiling point of 1670degC, and beside coolant void reactivity become negative. But problems are due to the high corrosivity to most of the structural materials and the corrosive data are scarcity. In this report, corrosivity, reaction with water, thermal-hydraulics, chemical toxicity etc. are studied by investigating some facilities utilized and researched really for lead or lead-bismuth. And, furthermore, polonium evaporation rate and bismuth resource are investigated. Main results obtained are as follows: (1) In a refinery, there are enough employment experience for liquid Pb-Bi in period of about 17 years and not corrosion for the thermal conductive materials (1Cr-0.5Mo steel) used under the condition of natural convection with temperature around 400degC. (2) In Russia, extensive experience in the use as Russian submarines and in R and D during about 50 years are available. And as a result, it will be able to lead approximately zero corrosion for Cr-Si materials by adjusting oxygen film with oxygen concentration control between 10{sup -7} to 10{sup -5}% mass. However, the corrosion data are not enough systematically collected involving them in radiation dose field. (3) In liquid-dropping experiment, it is shown that interaction between water and high temperature liquid Pb-Bi is reduced steeply with rising of atmosphere pressure. But, in order to design the second circuit removal model of ADS, the interaction should be evaluated by water continuous injection experiment. (4) Polonium forms PbPo in Pb-Bi, and the evaporation rate become less three factor than that of Po, and furthermore, the rate decreases in the atmosphere. The effects of Po on employee and environment

  7. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  8. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  9. Bismuth- and lithium-loaded plastic scintillators for gamma and neutron detection

    International Nuclear Information System (INIS)

    Cherepy, Nerine J.; Sanner, Robert D.; Beck, Patrick R.; Swanberg, Erik L.; Tillotson, Thomas M.; Payne, Stephen A.; Hurlbut, Charles R.

    2015-01-01

    Transparent plastic scintillators based on polyvinyltoluene (PVT) have been fabricated with high loading of bismuth carboxylates for gamma spectroscopy, and with lithium carboxylates for neutron detection. When activated with a combination of standard fluors, 2,5-diphenyloxazole (PPO) and tetraphenylbutadiene (TPB), gamma light yields with 15 wt% bismuth tripivalate of 5000 Ph/MeV are measured. A PVT plastic formulation including 30 wt% lithium pivalate and 30 wt% PPO offers both pulse shape discrimination, and a neutron capture peak at ~400 keVee. In another configuration, a bismuth-loaded PVT plastic is coated with ZnS( 6 Li) paint, permitting simultaneous gamma and neutron detection via pulse shape discrimination with a figure-of-merit of 3.8, while offering gamma spectroscopy with energy resolution of R(662 keV)=15%

  10. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  11. Fabrication of crystal-oriented barium-bismuth titanate ceramics in high magnetic field and subsequent reaction sintering

    International Nuclear Information System (INIS)

    Tanaka, Satoshi; Tomita, Yusuke; Furushima, Ryoichi; Uematsu, Keizo; Shimizu, Hiroyuki; Doshida, Yutaka

    2009-01-01

    High magnetic field was applied to fabricate novel lead-free piezoelectric ceramics with a textured structure. A compact of crystallographically oriented grains was prepared by dry forming in a high magnetic field from a mixed slurry of bismuth titanate and barium titanate powders. Bismuth titanate particles with a size of about 1 μ m were used as the host material. In the forming process, the slurry was poured into a mold and set in a magnetic field of 10 T until completely dried. Bismuth titanate particles were highly oriented in the slurry under the magnetic field. The dried powder compact consisted of highly oriented bismuth titanate particles and randomly oriented barium titanate particles. Barium bismuth titanate ceramics with a- and b-axis orientations were successfully produced from the dried compact by sintering at temperatures above 1100 deg. C.

  12. Overview of the use of ATHENA for thermal-hydraulic analysis of systems with lead-bismuth coolant

    International Nuclear Information System (INIS)

    Davis, C.B.; Shieh, A. S.

    2000-01-01

    The INEEL and MIT are investigating the suitability of lead-bismuth cooled fast reactor for producing low-cost electricity as well as for actinide burning. This paper is concerned with the general area of thermal-hydraulics of lead-bismuth cooled reactors. The ATHENA code is being used in the thermal-hydraulic design and analysis of lead-bismuth cooled reactors. The ATHENA code was reviewed to determine its applicability for simulating lead-bismuth cooled reactors. Two modifications were made to the code as a result of this review. Specifically, a correlation to represent heat transfer from rod bundles to a liquid metal and a void correlation based on data taken in a mixture of lead-bismuth and steam were added the code. The paper also summarizes the analytical work that is being performed with the code and plans for future analytical work

  13. Overview of the Use of ATHENA for Thermal-Hydraulic Analysis of Systems with Lead-Bismuth Coolant

    Energy Technology Data Exchange (ETDEWEB)

    Davis, Cliff Bybee; Shieh, Arthur Shan Luk

    2000-04-01

    The INEEL and MIT are investigating the suitability of lead-bismuth cooled fast reactor for producing low-cost electricity as well as for actinide burning. This paper is concerned with the general area of thermal-hydraulics of lead-bismuth cooled reactors. The ATHENA code is being used in the thermal-hydraulic design and analysis of lead-bismuth cooled reactors. The ATHENA code was reviewed to determine its applicability for simulating lead-bismuth cooled reactors. Two modifications were made to the code as a result of this review. Specifically, a correlation to represent heat transfer from rod bundles to a liquid metal and a void correlation based on data taken in a mixture of lead-bismuth and steam were added the code. The paper also summarizes the analytical work that is being performed with the code and plans for future analytical work.

  14. Coating compositions comprising bismuth-alloyed zinc

    DEFF Research Database (Denmark)

    2008-01-01

    The present application discloses (i) a coating composition comprising a particulate zinc-based alloyed material, said material comprising 0.05-0.7% by weight of bismuth (Bi), the D50 of the particulate material being in the range of 2.5-30 µm; (ii) a coated structure comprising a metal structure...... having a first coating of the zinc-containing coating composition applied onto at least a part of the metal structure in a dry film thickness of 5-100 µm; and an outer coating applied onto said zinc-containing coating in a dry film thickness of 30-200 µm; (iii) a particulate zinc-based alloyed material......, wherein the material comprises 0.05-0.7%(w/w) of bismuth (Bi), and wherein the D50 of the particulate material is in the range of 2.5-30 µm; (iv) a composite powder consisting of at least 25%(w/w) of the particulate zinc-based alloyed material, the rest being a particulate material consisting of zinc...

  15. Interactions between semiconductor nanowires and living cells.

    Science.gov (United States)

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  16. Spectroscopic Characterization of Extracellular Polymeric Substances from Escherichia coli and Serratia marcescens: Suppression using Sub-Inhibitory Concentrations of Bismuth Thiols

    Energy Technology Data Exchange (ETDEWEB)

    Badireddy, Appala R.; Korpol, Bhoom Reddy; Chellam, Shankararaman; Gassman, Paul L.; Engelhard, Mark H.; Lea, Alan S.; Rosso, Kevin M.

    2008-10-21

    Free and capsular EPS produced by Escherichia coli and Serratia marcescens were characterized in detail using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Total EPS production decreased upon treatment with sub-inhibitory concentrations of lipophilic bismuth thiols (bismuth dimercaptopropanol, BisBAL; bismuth ethanedithiol, BisEDT; and bismuth pyrithione, BisPYR), BisBAL being most effective. Bismuth thiols also influenced acetylation and carboxylation of polysaccharides in EPS from S. marcescens. Extensive homology between EPS samples in the presence and absence of bismuth was observed with proteins, polysaccharides, and nucleic acids varying predominantly only in the total amount expressed. Second derivative analysis of the amide I region of FTIR spectra revealed decreases in protein secondary structures in the presence of bismuth thiols. Hence, anti-fouling properties of bismuth thiols appear to originate in their ability to suppress O-acetylation and protein secondary structures in addition to total EPS secretion.

  17. Electrodeposition of rhenium-tin nanowires

    International Nuclear Information System (INIS)

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  18. MES lead bismuth forced circulation loop and test results

    International Nuclear Information System (INIS)

    Ono, Mikinori; Mine, Tatsuya; Kitano, Teruaki; Kamata, Kin-ya

    2003-01-01

    Liquid lead-bismuth is a promising material as future reactor coolant or intensive neutron source material for accelerator driven system (ADS). Mitsui Engineering and Shipbuilding Co., Ltd. (MES) completed lead-bismuth coolant (LBC) forced circulation loop in May 2001 and acquired engineering data on economizer, electro magnetic pump, electro magnetic flow meter and so on. For quality control of LBC, oxygen sensor and filtering element are developing using some hydrogen and moisture mixed gases. Structural materials corrosion test for accelerator driver system (ADS) will start soon. And thermal hydraulic test for ADS will start in tree years. (author)

  19. Megapixel mercury cadmium telluride focal plane arrays for infrared imaging out to 12 microns, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the fabrication of large format, long wave infrared (LWIR) mercury cadmium telluride (HgCdTe or MCT) detector arrays where the cutoff wavelength is...

  20. Gold nanowires and the effect of impurities

    Directory of Open Access Journals (Sweden)

    Novaes Frederico

    2006-01-01

    Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

  1. Shielding property of bismuth glass based on MCNP 5 and WINXCOM simulated calculation

    International Nuclear Information System (INIS)

    Zhang Zhicheng; Zhang Jinzhao; Liu Ze; Lu Chunhai; Chen Min

    2013-01-01

    Background: Currently, lead glass is widely used as observation window, while lead is toxic heavy metal. Purpose: Non-toxic materials and their shielding effects are researched in order to find a new material to replace lead containing material. Methods: The mass attenuation coefficients of bismuth silicate glass were investigated with gamma-ray's energy at 0.662 MeV, 1.17 MeV and 1.33 MeV, respectively, by MCNP 5 (Monte Carlo) and WINXCOM program, and compared with those of the lead glass. Results: With attenuation factor K, shielding and mechanical properties taken into consideration bismuth glass containing 50% bismuth oxide might be selected as the right material. Dose rate distributions of water phantom were calculated with 2-cm and 10-cm thick glass, respectively, irradiated by 137 Cs and 60 Co in turn. Conclusion: Results show that the bismuth glass may replace lead glass for radiation shielding with appropriate energy. (authors)

  2. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  3. Efficient enhancement of bismuth NIR luminescence by aluminum and its mechanism in bismuth doped germanate laser glass

    DEFF Research Database (Denmark)

    Wang, L.P.; Tan, L.L.; Yue, Yuanzheng

    2016-01-01

    As a new member of laser glass family, bismuth-doped glasses have received rising interests due to the application of fiber amplifiers and laser sources in the new spectral range for the next-generation optical communication system. For practical application of the glasses, it must be considered ...

  4. Power generation from thermoelectric system-embedded Plexiglas for green building technology

    KAUST Repository

    Inayat, Salman Bin

    2012-06-09

    Thermoelectric materials embedded through or inside exterior glass windows can act as a viable source of supplemental power in geographic locations where hot weather dominates. This thermoelectricity is generated because of the thermal difference between the high temperature outside and the relatively cold temperature inside. Using physical vapor deposition process, we experimentally verify this concept by embedding bismuth telluride and antimony telluride through the 5 mm Plexiglas to demonstrate 10 nW of thermopower generation with a temperature gradient of 21 °C. Albeit tiny at this point with non-optimized design and development, this concept can be extended for relatively large-scale power generation as an additional power supply for green building technology.

  5. Failure mechanisms and electromechanical coupling in semiconducting nanowires

    Directory of Open Access Journals (Sweden)

    Peng B.

    2010-06-01

    Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

  6. Photoinduced switchable wettability of bismuth coating with hierarchical dendritic structure between superhydrophobicity and superhydrophilicity

    Energy Technology Data Exchange (ETDEWEB)

    Su, Chunping; Lu, Zhong; Zhao, Huiping; Yang, Hao, E-mail: hyangwit@hotmail.com; Chen, Rong, E-mail: rchenhku@hotmail.com

    2015-10-30

    Graphical abstract: - Highlights: • Hierarchical bismuth nanostructures were synthesized by galvanic replacement reaction. • The bismuth coating shows superhydrophobicity after being modified by stearic acid. • Wetting transition could be realized by alternation of irradiation and modification. - Abstract: Special wettability such as superhydrophobicity and superhydrophilicity has aroused considerable attention in recent years, especially for the surface that can be switched between superhydrophobicity and superhydrophilicity. In this work, hierarchical bismuth nanostructures with hyperbranched dendritic architectures were synthesized via the galvanic replacement reaction between zinc plate and BiCl{sub 3} in ethylene glycol solution, which was composed of a trunk, branches (secondary branch), and leaves (tertiary branch). After being modified by stearic acid, the as-prepared bismuth coating shows superhydrophobicity with a high water contact angle of 164.8° and a low sliding angle of 3°. More importantly, a remarkable surface wettability transition between superhydrophobicity and superhydrophilicity could be easily realized by the alternation of UV–vis irradiation and modification with stearic acid. The tunable wetting behavior of bismuth coating could be used as smart materials to make a great application in practice.

  7. Electrochemical study on determination of diffusivity, activity and solubility of oxygen in liquid bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, Rajesh [Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Gnanasekaran, T. [Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)]. E-mail: gnani@igcar.ernet.in; Srinivasa, Raman S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2006-06-15

    Diffusivity of oxygen in liquid bismuth was measured by potentiostatic method and is given bylg(D{sub O}{sup Bi}/cm{sup 2}.s{sup -1})(+/-0.042)=-3.706-1377/(TK{sup -1})(804bismuth was determined by coulometric titrations and using the measured data standard free energy of dissolution of oxygen in liquid bismuth was derived for the reaction:1/2O{sub 2}(g)=[O]{sub Bi}(at.%)and is given by{delta}G{sub O(Bi)}{sup o}/(J.g-atomO{sup -1})(+/-720)=-108784+20.356TK{sup -1}(753bismuth was derived as a function of temperature and is given by the following expressions:lg(S/at%O)(+/-0.05)=-4476/TK{sup -1}+4.05(753bismuth is compared with the literature data.

  8. Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

    2017-03-01

    Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

  9. Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

    2016-07-01

    We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

  10. A sensitive fluorescence quenching method for determination of bismuth with tiron

    Energy Technology Data Exchange (ETDEWEB)

    Taher, Mohammad Ali; Rahimi, Mina [Department of Chemistry, Shahid Bahonar University of Kerman, Kerman (Iran, Islamic Republic of); Fazelirad, Hamid, E-mail: hamidfazelirad@gmail.com [Department of Chemistry, Shahid Bahonar University of Kerman, Kerman (Iran, Islamic Republic of); Department of Chemistry, Science and Research Branch, Islamic Azad University, Yazd (Iran, Islamic Republic of); Young Researchers Society, Shahid Bahonar University of Kerman, P.O. Box 76175-133, Kerman (Iran, Islamic Republic of)

    2014-01-15

    We describe a fluorescence quenching method for determination of bismuth with tiron. The method is based on the reaction of tiron by bismuth(III) in acidic media. The influence of variables such as the pH, type of buffer, tiron concentration, reaction time and temperature were investigated. Under optimized conditions, the fluorescence quenching extent is proportional to the concentration of bismuth for Bi–tiron system at the range 0.13–2.09 μg mL{sup −1} and the detection limit is 0.05 μg mL{sup −1}. The proposed sensor presented good repeatability, evaluated in terms of relative standard deviation (R.S.D.=±0.498%) for 11 replicates. This sensitive, rapid and accurate method has been successfully applied to the determination of trace bismuth(III) in water and hair samples and certified reference materials. -- Highlights: • No previous paper report on use of fluorescence quenching for determination of Bi. • Fluorescence quenching of trion is a sensitive method for determination of Bi(III). • Under the optimum conditions the detection limit is very low (0.05 μg mL{sup −1}). • The procedure is simple and safe and has high tolerance limit to interferences.

  11. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  12. Status and future application of pilot lead-bismuth target circuit TC-1 for ADS

    Energy Technology Data Exchange (ETDEWEB)

    Ignatiev, S.; Leonchuk, M.; Orlov, Y.; Pankratov, D.; Reshetnikova, O.; Suvorov, G.; Zabudko, A. [Institute for Physics and Power Engineering, Obninsk (Russian Federation); Stepanov, V.; Klimov, N. [Experimental and Design Organization, Gidropress, Podolsk (Russian Federation); Hechanova, A.; Ma, J. [Nevada Univ., Las Vegas, NV (United States); Li, N. [Los Alamos National Lab., NM (United States); Gudowski, W. [International Science and Technology Center, Moscow (Russian Federation)

    2007-07-01

    A complicated evolution, status and future application of the pilot molten lead-bismuth target circuit of 1 MW proton beam power (TC-1) as an important part of a target-blanket accelerator driven system (ADS), that has been developed, created and twice tested under the auspice of the International Science and Technology Center (ISTC), is analyzed. The target complex TC-1 is a circulation lead-bismuth loop whose beam window is made of ferritic steel EP-823 (this steel was used in the past as material of fuel rods cladding in reactors cooled with lead-bismuth). At present TC-1 is operating at coolant temperature up to 300 C degrees and will be used to study different issues linked to the use of lead-bismuth: -) interaction with air, water and hydrogen, -) different regimes of flow, -) corrosion, -) filtering, or -) slag formation.

  13. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  14. Nanowire failure: long = brittle and short = ductile.

    Science.gov (United States)

    Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

    2012-02-08

    Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

  15. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  16. Possible bicollinear nematic state with monoclinic lattice distortions in iron telluride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, Christopher B. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Herbrych, Jacek W. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Dagotto, Elbio R. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moreo, Adriana [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-15

    Here, iron telluride (FeTe) is known to display bicollinear magnetic order at low temperatures together with a monoclinic lattice distortion. Because the bicollinear order can involve two different wave vectors (π/2,π/2) and (π/2,–π/2), symmetry considerations allow for the possible stabilization of a nematic state with short-range bicollinear order coupled to monoclinic lattice distortions at a TS higher than the temperature TN where long-range bicollinear order fully develops. As a concrete example, the three-orbital spin-fermion model for iron telluride is studied with an additional coupling ˜λ12 between the monoclinic lattice strain and an orbital-nematic order parameter with B2g symmetry. Monte Carlo simulations show that with increasing ˜λ12 the first-order transition characteristic of FeTe splits and bicollinear nematicity is stabilized in a (narrow) temperature range. In this new regime, the lattice is monoclinically distorted and short-range spin and orbital order breaks rotational invariance. A discussion of possible realizations of this exotic state is provided.

  17. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Kelly, Peter J.; West, Glen T. [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Tosheva, Lubomira; Edge, Michele [School of Science and the Environment, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

    2017-01-15

    Highlights: • Bismuth tungstate coatings were deposited by reactive magnetron sputtering. • Oscillating bowl was introduced to the system to enable coating of nanopartulates. • Deposition of Bi{sub 2}WO{sub 6} enhanced visible light activity of titania nanoparticles. • The best results were obtained for coating with Bi:W ratio of approximately 2:1. • Deposition of Bi{sub 2}WO{sub 6} onto TiO{sub 2} resulted in more efficient electron-hole separation. - Abstract: Titanium dioxide − bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer–Emmett–Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO{sub 2} evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO{sub 2} nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these

  18. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    Directory of Open Access Journals (Sweden)

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  19. Preparation and characterization of CuO nanowire arrays

    International Nuclear Information System (INIS)

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  20. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. Sandeep Arya. Articles written in Bulletin of Materials Science. Volume 36 Issue 4 August 2013 pp 535-539. Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor · Sandeep Arya Saleem Khan Suresh Kumar Rajnikant ...

  1. Teresa Barnes, Ph.D. | NREL

    Science.gov (United States)

    graduate student. She came to NREL as a postdoctoral researcher to continue working on transparent conducting oxides and began working on carbon nanotube and metal nanowire transparent contacts. She is currently a senior scientist at NREL working on cadmium telluride (CdTe) solar cells. Her research interests

  2. Saleem Khan

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. Saleem Khan. Articles written in Bulletin of Materials Science. Volume 36 Issue 4 August 2013 pp 535-539. Synthesis of copper telluride nanowires using template-based electrodeposition method as chemical sensor · Sandeep Arya Saleem Khan Suresh Kumar Rajnikant ...

  3. Improvements to a Flow Sensor for Liquid Bismuth-Fed Hall Thrusters

    Science.gov (United States)

    Bonds, Kevin; Polzin, Kurt A.

    2010-01-01

    Recently, there has been significant interest in using bismuth metal as a propellant in Hall Thrusters [1, 2]. Bismuth offers some considerable cost, weight, and space savings over the traditional propellant--xenon. Quantifying the performance of liquid metal-fed Hall thrusters requires a very precise measure of the low propellant flow rates [1, 2]. The low flow rates (10 mg/sec) and the temperature at which free flowing liquid bismuth exists (above 300 C) preclude the use of off-the-shelf flow sensing equipment [3]. Therefore a new type of sensor is required. The hotspot bismuth flow sensor, described in Refs. [1-5] is designed to perform a flow rate measurement by measuring the velocity at which a thermal feature moves through a flow chamber. The mass flow rate can be determined from the time of flight of the thermal peak, [4, 5]. Previous research and testing has been concerned mainly with the generation of the thermal peak and it's subsequent detection. In this paper, we present design improvements to the sensor concept; and the results of testing conducted to verify the functionality of these improvements. A ceramic material is required for the sensor body (see Fig. 1), which must allow for active heating of the bismuth flow channel to keep the propellant in a liquid state. The material must be compatible with bismuth and must be bonded to conductive elements to allow for conduction of current into the liquid metal and measurement of the temperature in the flow. The new sensor requires fabrication techniques that will allow for a very small diameter flow chamber, which is required to produce useful measurements. Testing of various materials has revealed several that are potentially compatible with liquid bismuth. Of primary concern in the fabrication and testing of a robust, working prototype, is the compatibility of the selected materials with one another. Specifically, the thermal expansion rates of the materials relative to the ceramic body cannot expand so

  4. Moessbauer study of Fe-Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  5. Phase transition of solid bismuth under high pressure

    International Nuclear Information System (INIS)

    Chen Hai-Yan; Xiang Shi-Kai; Yan Xiao-Zhen; Zhang Yi; Liu Sheng-Gang; Bi Yan; Zheng Li-Rong

    2016-01-01

    As a widely used pressure calibrator, the structural phase transitions of bismuth from phase I, to phase II, to phase III, and then to phase V with increasing pressure at 300 K have been widely confirmed. However, there are different structural versions for phase III, most of which are determined by x-ray diffraction (XRD) technology. Using x-ray absorption fine structure (XAFS) measurements combined with ab initio calculations, we show that the proposed incommensurate composite structure of bismuth of the three configurations is the best option. An abnormal continuous increase of the nearest-neighbor distance of phase III with elevated pressure is also observed. The electronic structure transformation from semimetal to metal is responsible for the complex behavior of structure transformation. (paper)

  6. Bismuth Oxysulfide and Its Polymer Nanocomposites for Efficient Purification

    Directory of Open Access Journals (Sweden)

    Yidong Luo

    2018-03-01

    Full Text Available The danger of toxic organic pollutants in both aquatic and air environments calls for high-efficiency purification material. Herein, layered bismuth copper oxychalcogenides, BiCuSO, nanosheets of high photocatalytic activity were introduced to the PVDF (Polyvinylidene Fluoride. The fibrous membranes provide an easy, efficient, and recyclable way to purify organic pollutant. The physical and photophysical properties of the BiCuSO and its polymer composite were characterized by scanning electron microscopy (SEM, X-ray diffraction (XRD, ultraviolet-visible diffuse reflection spectroscopy (DRS, X-ray photoelectron spectroscopy (XPS, electron spin resonance (EPR. Photocatalysis of Congo Red reveals that the BiCuSO/PVDF shows a superior photocatalytic activity of a 55% degradation rate in 70 min at visible light. The high photocatalytic activity is attributed to the exposed active {101} facets and the triple vacant associates V B i ‴ V O • • V B i ‴ . By engineering the intrinsic defects on the surface of bismuth oxysulfide, high solar-driven photocatalytic activity can be approached. The successful fabrication of the bismuth oxysulfide and its polymer nanocomposites provides an easy and general approach for high-performance purification materials for various applications.

  7. Bismuth-ceramic nanocomposites through ball milling and liquid crystal synthetic methods

    Science.gov (United States)

    Dellinger, Timothy Michael

    Three methods were developed for the synthesis of bismuth-ceramic nanocomposites, which are of interest due to possible use as thermoelectric materials. In the first synthetic method, high energy ball milling of bismuth metal with either MgO or SiO2 was found to produce nanostructured bismuth dispersed on a ceramic material. The morphology of the resulting bismuth depended on its wetting behavior with respect to the ceramic: the metal wet the MgO, but did not wet on the SiO2. Differential Scanning Calorimetry measurements on these composites revealed unusual thermal stability, with nanostructure retained after multiple cycles of heating and cooling through the metal's melting point. The second synthesis methodology was based on the use of lyotropic liquid crystals. These mixtures of water and amphiphilic molecules self-assemble to form periodic structures with nanometer-scale hydrophilic and hydrophobic domains. A novel shear mixing methodology was developed for bringing together reactants which were added to the liquid crystals as dissolved salts. The liquid crystals served to mediate synthesis by acting as nanoreactors to confine chemical reactions within the nanoscale domains of the mesophase, and resulted in the production of nanoparticles. By synthesizing lead sulfide (PbS) and bismuth (Bi) particles as proof-of-concept, it was shown that nanoparticle size could be controlled by controlling the dimensionality of the nanoreactors through control of the liquid crystalline phase. Particle size was shown to decrease upon going from three-dimensionally percolating nanoreactors, to two dimensional sheet-like nanoreactors, to one dimensional rod-like nanoreactors. Additionally, particle size could be controlled by varying the precursor salt concentration. Since the nanoparticles did not agglomerate in the liquid crystal immediately after synthesis, bismuth-ceramic nanocomposites could be prepared by synthesizing Bi nanoparticles and mixing in SiO2 particles which

  8. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jurgen

    2013-12-19

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  9. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda

    2013-01-01

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  10. Magnetic drug delivery with FePd nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Pondman, Kirsten M.; Bunt, Nathan D. [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands); Maijenburg, A. Wouter [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Wezel, Richard J.A. van [Biomedical Signals and Systems, MIRA, Twente University, Enschede (Netherlands); Kishore, Uday [Centre for Infection, Immunity and Disease Mechanisms, Biosciences, Brunel University, London (United Kingdom); Abelmann, Leon [Transducer Science and Technology group, MESA+ Institute for nanotechnology, University of Twente, Enschede (Netherlands); Elshof, Johan E. ten [Inorganic Material Science, MESA+ Institute for Nanotechnology, University of Twente, Enschede (Netherlands); Haken, Bennie ten, E-mail: b.tenhaken@utwente.nl [Neuro Imaging, MIRA Institute, University of Twente, Enschede (Netherlands)

    2015-04-15

    Magnetic drug delivery is a promising method to target a drug to a diseased area while reducing negative side effects caused by systemic administration of drugs. In magnetic drug delivery a therapeutic agent is coupled to a magnetic nanoparticle. The particles are injected and at the target location withdrawn from blood flow by a magnetic field. In this study a FePd nanowire is developed with optimised properties for magnetic targeting. The nanowires have a high magnetic moment to reduce the field gradient needed to capture them with a magnet. The dimensions and the materials of the nanowire and coating are such that they are dispersable in aqueous media, non-cytotoxic, easily phagocytosed and not complement activating. This is established in several in-vitro tests with macrophage and endothelial cell lines. Along with the nanowires a magnet is designed, optimised for capture of the nanowires from the blood flow in the hind leg of a rat. The system is used in a pilot scale in-vivo experiment. No negative side effects from injection of the nanowires were found within the limited time span of the experiment. In this first pilot experiment no nanowires were found to be targeted by the magnet, or in the liver, kidneys or spleen, most likely the particles were removed during the fixation procedure. - Highlights: • Description of the magnetic properties of nanowires. • Design and characterisation of a biocompatible FePd nanowire. • In-vitro cytotoxicity analysis and immune system responses. • In-vivo magnetic drug delivery using the developed nanowires.

  11. Epitaxy of advanced nanowire quantum devices

    Science.gov (United States)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  12. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    International Nuclear Information System (INIS)

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  13. Electrochemical synthesis of CORE-shell magnetic nanowires

    KAUST Repository

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  14. Metal-dielectric-CNT nanowires for surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Bond, Tiziana C.; Altun, Ali; Park, Hyung Gyu

    2017-10-03

    A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.

  15. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  16. Hydrolysis studies on bismuth nitrate: synthesis and crystallization of four novel polynuclear basic bismuth nitrates.

    Science.gov (United States)

    Miersch, L; Rüffer, T; Schlesinger, M; Lang, H; Mehring, M

    2012-09-03

    Hydrolysis of Bi(NO(3))(3) in aqueous solution gave crystals of the novel compounds [Bi(6)O(4)(OH)(4)(NO(3))(5)(H(2)O)](NO(3)) (1) and [Bi(6)O(4)(OH)(4)(NO(3))(6)(H(2)O)(2)]·H(2)O (2) among the series of hexanuclear bismuth oxido nitrates. Compounds 1 and 2 both crystallize in the monoclinic space group P2(1)/n but show significant differences in their lattice parameters: 1, a = 9.2516(6) Å, b = 13.4298(9) Å, c = 17.8471(14) Å, β = 94.531(6)°, V = 2210.5(3) Å(3); 2, a = 9.0149(3) Å, b = 16.9298(4) Å, c = 15.6864(4) Å, β = 90.129(3)°, V = 2394.06(12) Å(3). Variation of the conditions for partial hydrolysis of Bi(NO(3))(3) gave bismuth oxido nitrates of even higher nuclearity, [{Bi(38)O(45)(NO(3))(24)(DMSO)(26)}·4DMSO][{Bi(38)O(45)(NO(3))(24)(DMSO)(24)}·4DMSO] (3) and [{Bi(38)O(45)(NO(3))(24)(DMSO)(26)}·2DMSO][{Bi(38)O(45)(NO(3))(24)(DMSO)(24)}·0.5DMSO] (5), upon crystallization from DMSO. Bismuth oxido clusters 3 and 5 crystallize in the triclinic space group P1 both with two crystallographically independent molecules in the asymmetric unit. The following lattice parameters are observed: 3, a = 20.3804(10) Å, b = 20.3871(9) Å, c = 34.9715(15) Å, α = 76.657(4)°, β = 73.479(4)°, γ = 60.228(5)°, V = 12021.7(9) Å(3); 5, a = 20.0329(4) Å, b = 20.0601(4) Å, c = 34.3532(6) Å, α = 90.196(1)°, β = 91.344(2)°, γ = 119.370(2)°, V = 12025.8(4) Å(3). Differences in the number of DMSO molecules (coordinated and noncoordinated) and ligand (nitrate, DMSO) coordination modes are observed.

  17. Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

    International Nuclear Information System (INIS)

    Wang Huanwen; Hu Zhongai; Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying

    2010-01-01

    This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 o C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g -1 (based on composite) is obtained at a specific current of 1 A g -1 as compared with 71 F g -1 for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g -1 even at 10 A g -1 . In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

  18. Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huanwen [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Hu Zhongai, E-mail: zhongai@nwnu.edu.c [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China)

    2010-12-01

    This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 {sup o}C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g{sup -1} (based on composite) is obtained at a specific current of 1 A g{sup -1} as compared with 71 F g{sup -1} for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g{sup -1} even at 10 A g{sup -1}. In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

  19. Reversal modes in asymmetric Ni nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Leighton, B.; Pereira, A. [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Escrig, J., E-mail: jescrigm@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avda. Ecuador 3493, 917-0124 Santiago (Chile)

    2012-11-15

    We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed. - Highlights: Black-Right-Pointing-Pointer Asymmetry strongly modifies the magnetic behavior of a wire. Black-Right-Pointing-Pointer Very asymmetric nanowires reverse their magnetization by a transverse domain wall. Black-Right-Pointing-Pointer An alternative method to detect the presence of magnetic drops is proposed. Black-Right-Pointing-Pointer Tailoring the reversal mode in asymmetric nanowires can be useful for potential applications.

  20. 21 CFR 73.2110 - Bismuth citrate.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth citrate. 73.2110 Section 73.2110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... paragraph (c)(1), effective April 27, 2010. For the convenience of the user, the revised text is set forth...

  1. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

  2. Build-up enhancement of photoluminescence from phenylazomethine bismuth dendrimer using Bi(OTf)3

    Science.gov (United States)

    Kambe, Tetsuya; Imaoka, Shotaro; Imaoka, Takane; Yamamoto, Kimihisa

    2018-05-01

    Metal assembly to a dendrimer can provide various functionalities based on the branched structure. Here, we researched assembly phenomena of bismuth salts in the phenylazomethine dendrimer and achieved enhancement of emission intensity per metal unit by using Bi(OTf)3. This enhancement suggested increasing of Bi-N coordination bonds derived from the bismuth units in the dendrimer.

  3. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  4. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  5. Separation of bismuth from gram amounts of thallium and silver by cation-exchange chromatography in nitric acid.

    Science.gov (United States)

    Meintjies, E; Strelow, F W; Victor, A H

    1987-04-01

    Traces and small amounts of bismuth can be separated from gram amounts of thallium and silver by successively eluting these elements with 0.3M and 0.6M nitric acid from a column containing 13 ml (3 g) of AG50W-X4, a cation-exchanger (100-200 mesh particle size) with low cross-linking. Bismuth is retained and can be eluted with 0.2M hydrobromic acid containing 20% v/v acetone, leaving many other trace elements absorbed. Elution of thallium is quite sharp, but silver shows a small amount of tailing (less than 1 gmg/ml silver in the eluate) when gram amounts are present, between 20 and 80 mug of silver appearing in the bismuth fraction. Relevant elution curves and results for the analysis of synthetic mixtures containing between 50 mug and 10 mg of bismuth and up to more than 1 g of thallium and silver are presented, as well as results for bismuth in a sample of thallium metal and in Merck thallium(I) carbonate. As little as 0.01 ppm of bismuth can be determined when the separation is combined with electrothermal atomic-absorption spectrometry.

  6. Au nanowire junction breakup through surface atom diffusion

    Science.gov (United States)

    Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

    2018-01-01

    Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

  7. Core-shell magnetic nanowires fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kalska-Szostko, B., E-mail: kalska@uwb.edu.pl [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland); Klekotka, U.; Satuła, D. [Institute of Chemistry, University of Bialystok, Ciolkowskiego 1K, 15-245 Bialystok (Poland); Faculty of Physics, University of Bialystok, Ciolkowskiego 1L, 15-245 Bialystok, Poland (Poland)

    2017-02-28

    Highlights: • New approach for nanowires modification are presented. • Physical and chemical characterization of the nanowires are shown. • Properties modulations as an effect of the surface layer composition are discussed. - Abstract: In this paper, a new way of the preparation of core-shell magnetic nanowires has been proposed. For the modification Fe nanowires were prepared by electrodeposition in anodic aluminium oxide matrixes, in first step. In second, by wetting chemical deposition, shell layers of Ag, Au or Cu were obtained. Resultant core-shell nanowires structure was characterized by X-ray diffraction, infrared spectroscopy, transmission electron microscopy, and energy dispersive x-ray. Whereas magnetic properties by Mössbauer spectroscopy.

  8. Template-based fabrication of nanowire-nanotube hybrid arrays

    International Nuclear Information System (INIS)

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  9. Neutron activation determination of impurities in high-purity bismuth with separation of matrix in form of hydroxide

    International Nuclear Information System (INIS)

    Artyukhin, P.I.; Shavinskij, B.M.; Mityakin, Yu.L.

    1979-01-01

    The technique of neutron activation determination of 15 impurity elements (Au, Ag, Ba, Cd, Co, Cs, Cu, Hg, K, Na, Ni, Se, Sr, Te, Zn) in high-purity bismuth (impurity content is approximately 10 -6 -10 -10 %) is presented. Bismuth hydroxide precipitation by ammonia from nitric acid solutions was used to separate bismuth from alkali, alkaline earth metals and elements forming stable ammines. Gold, selenium and tellurium are isolated in the form of metals at reduction by muriatic hydrazine. Results of analyzing two samples of special purity bismuth are presented. Neutron flux comprised 0.8-1x10 13 n/cm 2 xs. Radiation time was equal to 90 hours

  10. Correlation between near infrared emission and bismuth radical species of Bi2O3-containing aluminoborate glass

    International Nuclear Information System (INIS)

    Masai, Hirokazu; Takahashi, Yoshihiro; Fujiwara, Takumi; Suzuki, Takenobu; Ohishi, Yasutake

    2009-01-01

    A strong correlation between bismuth radical species and emission in the near infrared (NIR) region of SnO-doped bismuth-containing aluminoborate glass, (CaO-B 2 O 3 -Bi 2 O 3 -Al 2 O 3 -TiO 2 ) (CaBBAT), was observed. Since the activation energy of the NIR emission was similar to that of electron spin resonance signal, it is expected that bismuth radical species in the CaBBAT glass is an origin of the NIR emission. Compared to the observed emission spectra with energy diagram of previous data, we have confirmed that bismuth ion possessing low valence is the origin of broad emission in the NIR region.

  11. Large-scale synthesis of bismuth sulfide nanorods by microwave irradiation

    International Nuclear Information System (INIS)

    Wu Jiliang; Qin Fan; Cheng Gang; Li Hui; Zhang Jiuhong; Xie Yaoping; Yang Haijian; Lu Zhong; Yu Xianglin; Chen Rong

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → Large-scale Bi 2 S 3 nanorods have been prepared by microwave irradiation methods. → CTAB and β-CD are beneficial to the formation of Bi 2 S 3 nanorods. → DMF, EG and DEG were favorable solvents. → Bismuth and sulfur precursors influenced the size and morphology. → A proposed formation mechanism of Bi 2 S 3 nanorods was summarized. - Abstract: Bismuth sulfide (Bi 2 S 3 ) has attracted considerable interest due to its potential applications in thermoelectric and electronic devices, optoelectronic devices, and biomedicine. In this study, large-scale highly crystalline Bi 2 S 3 nanorods were successfully prepared from bismuth citrate and thiourea (Tu) by microwave irradiation methods. The products were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM, HRTEM) and selected area electron diffraction (SAED). The influences of reaction time, surfactants, solvents, and precursors on the formation of Bi 2 S 3 nanorods were discussed. The microwave irradiation method reduced reaction time by at least 80% in the synthesis of Bi 2 S 3 nanorods compared with the refluxing method. Cetyltrimethylammonium bromide (CTAB) and β-cyclodextrin (β-CD) were found to be beneficial to the formation of Bi 2 S 3 nanorods. N,N-dimethylformamide, ethylene glycol, and diethylene glycol were the favorable solvents in the fabrication of these nanorods. It was found that different bismuth and sulfur precursors influenced the sizes and morphologies of the Bi 2 S 3 nanorods. The proposed growth mechanism of Bi 2 S 3 nanorods was also discussed.

  12. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    International Nuclear Information System (INIS)

    Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

    2015-01-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

  13. Magnetoreflection studies of ion implanted bismuth

    International Nuclear Information System (INIS)

    Nicolini, C.; Chieu, T.C.; Dresselhaus, M.S.; Massachusetts Inst. of Tech., Cambridge; Dresselhaus, G.

    1982-01-01

    The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite to those observed for Bi chemically doped with Sb. (author)

  14. Quantum transport in nanowire-based hybrid devices

    Energy Technology Data Exchange (ETDEWEB)

    Guenel, Haci Yusuf

    2013-05-08

    We have studied the low-temperature transport properties of nanowires contacted by a normal metal as well as by superconducting electrodes. As a consequence of quantum coherence, we have demonstrated the electron interference effect in different aspects. The mesoscopic phase coherent transport properties were studied by contacting the semiconductor InAs and InSb nanowires with normal metal electrodes. Moreover, we explored the interaction of the microscopic quantum coherence of the nanowires with the macroscopic quantum coherence of the superconductors. In superconducting Nb contacted InAs nanowire junctions, we have investigated the effect of temperature, magnetic field and electric field on the supercurrent. Owing to relatively high critical temperature of superconducting Nb (T{sub c} ∝ 9 K), we have observed the supercurrent up to 4 K for highly doped nanowire-based junctions, while for low doped nanowire-based junctions a full control of the supercurrent was achieved. Due to low transversal dimension of the nanowires, we have found a monotonous decay of the critical current in magnetic field dependent measurements. The experimental results were analyzed within narrow junction model which has been developed recently. At high bias voltages, we have observed subharmonic energy gap structures as a consequence of multiple Andreev reflection. Some of the nanowires were etched, such that the superconducting Nb electrodes are connected to both ends of the nanowire rather than covering the surface of the nanowire. As a result of well defined nanowire-superconductor interfaces, we have examined quasiparticle interference effect in magnetotransport measurements. Furthermore, we have developed a new junction geometry, such that one of the superconducting Nb electrodes is replaced by a superconducting Al. Owing to the smaller critical magnetic field of superconducting Al (B{sub c} ∝ 15-50,mT), compared to superconducting Nb (B{sub c} ∝ 3 T), we were able to studied

  15. Electrochemical synthesis of highly crystalline copper nanowires

    International Nuclear Information System (INIS)

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  16. Synthesis of binary bismuth-cadmium oxide nanorods with sensitive electrochemical sensing performance

    International Nuclear Information System (INIS)

    Wen, Yong; Pei, Lizhai; Wei, Tian

    2017-01-01

    Binary bismuth-cadmium oxide nanorods have been synthesized by a simple hydrothermal process without templates and additives. X-ray diffraction and high-resolution transmission electron microscopy reveal that the nanorods possess single crystalline tetragonal Bi 2 CdO 4 phase. Scanning electron microscopy and transmission electron microscopy images show that the length and diameter of the nanorods are 20-300 nm and 5-10 μm, respectively. The formation of the binary bismuth-cadmium oxide nanorods is closely related to the hydrothermal parameters. The electrochemical sensing performance of the binary bismuth-cadmium oxide nanorods has been investigated using the nanorods as glassy carbon electrode modifiers. The detection limit is 0.19 μM with a linear range of 0.0005-2 mM. The nanorod-modified glassy carbon electrode exhibits good electrocatalytic activity toward L-cysteine and great application potential for electrochemical sensors.

  17. Bismuth germanate's role in the new revolution in gamma-ray spectroscopy

    International Nuclear Information System (INIS)

    Johnson, N.R.; Baktash, C.; Lee, I.Y.

    1983-01-01

    Some of the considerations on how to effectively incorporate bismuth germanate into complex detection systems are covered, and some of these new systems now in operation or under construction are discussed. Significant achievements in gamma ray spectroscopy are reviewed as well as some recent results based on data taken with coincidence arrays of germanium detectors and Compton-suppression spectrometers. Then the first impact of bismuth germanate detectors on our understanding of the properties of nuclei that have high energy and very high angular momentum states are addressed

  18. Electrical properties of cadmium telluride films doped with antimony

    International Nuclear Information System (INIS)

    Atdaev, B.S.; Garyagdyev, G.; Grin', V.F.; Noskov, A.I.

    1989-01-01

    Effect of cadmium telluride doping with antimony on electric and photoelectric properties is investigated. Temperature dependence of dark (σ d ) and photoconductivity (σ p ) during excitation from the range of proper absorption in the temperature range 77-300 K and spectral distribution of photoconductivity at 300 K are investigated. It is shown that in the process of doping antimony diffusses intensively over CdTe grain boundaries, decreasing potential barriers between them and due to diffusion into CdTe grains it changes their electrical properties. The acceptor character of antimony impurity can be caused by antimony diffusion into tellurium sublattice owing to proximity of their ionic and covalent radii

  19. Enhanced ionized impurity scattering in nanowires

    Science.gov (United States)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  20. An acclerator-based installation of small power with the lead-bismuth coolant

    Energy Technology Data Exchange (ETDEWEB)

    Gorshkov, V.T.; Yefimov, E.I.; Novikova, N.N. [Research and Development Bereau, Podolsk (Russian Federation)] [and others

    1995-10-01

    The structure of the accelerator-based installation is described that includes the subcritical reactor-blanket with power 15 MW(h) cooled with lead-bismuth, the lead-bismuth flow target where a beam of {alpha}-particle is injected, the equipment of a primary and secondary curcuits. Some results of calculations and estimations are discussed that have been carried out to justify the target and blanket constructions. Some main characteristics of the installation are presented.

  1. Comparison of Second-Line Quadruple Therapies with or without Bismuth for Helicobacter pylori Infection

    Directory of Open Access Journals (Sweden)

    Guang-Hong Jheng

    2015-01-01

    Full Text Available The bismuth-based quadruple regimen has been applied in Helicobacter pylori rescue therapy worldwide. The non-bismuth-based quadruple therapy or “concomitant therapy” is an alternative option in first-line eradication but has not been used in second-line therapy. Discovering a valid regimen for rescue therapy in bismuth-unavailable countries is important. We conducted a randomized controlled trial to compare the efficacies of the standard quadruple therapy and a modified concomitant regimen. One hundred and twenty-four patients were randomly assigned into two groups: RBTM (rabeprozole 20 mg bid., bismuth subcitrate 120 mg qid, tetracycline 500 mg qid, and metronidazole 250 mg qid and RATM (rabeprozole 20 mg bid., amoxicillin 1 g bid., tetracycline 500 mg qid, and metronidazole 250 mg qid for 10 days. The eradication rate of the RBTM and RATM regimen was 92.1% and 90.2%, respectively, in intention-to-treat analysis. Patients in both groups had good compliance (~96%. The overall incidence of adverse events was higher in the RATM group (42.6% versus 22.2%, P=0.02, but only seven patients (11.5% experienced grades 2-3 events. In conclusion, both regimens had good efficacy, compliance, and acceptable side effects. The 10-day RATM treatment could be an alternative rescue therapy in bismuth-unavailable countries.

  2. Bending and tensile deformation of metallic nanowires

    International Nuclear Information System (INIS)

    McDowell, Matthew T; Leach, Austin M; Gall, Ken

    2008-01-01

    Using molecular statics simulations and the embedded atom method, a technique for bending silver nanowires and calculating Young's modulus via continuum mechanics has been developed. The measured Young's modulus values extracted from bending simulations were compared with modulus values calculated from uniaxial tension simulations for a range of nanowire sizes, orientations and geometries. Depending on axial orientation, the nanowires exhibit stiffening or softening under tension and bending as size decreases. Bending simulations typically result in a greater variation of Young's modulus values with nanowire size compared with tensile deformation, which indicates a loading-method-dependent size effect on elastic properties at sub-5 nm wire diameters. Since the axial stress is maximized at the lateral surfaces in bending, the loading-method-dependent size effect is postulated to be primarily a result of differences in nanowire surface and core elastic modulus. The divergence of Young's modulus from the bulk modulus in these simulations occurs at sizes below the range in which experiments have demonstrated a size scale effect on elastic properties of metallic nanowires. This difference indicates that other factors beyond native metallic surface properties play a role in experimentally observed nanowire elastic modulus size effects

  3. Effects of crystallite structure and interface band alignment on the photocatalytic property of bismuth ferrite/ (N-doped) graphene composites

    International Nuclear Information System (INIS)

    Li, Pai; Chen, Qiang; Lin, Yinyin; Chang, Gang; He, Yunbin

    2016-01-01

    Bismuth ferrite/graphene (N-doped graphene) photocatalysts are successfully prepared by a facile and effective two-step hydrothermal method. Bismuth ferrite/graphene shows superior photocatalytic activity compared with bismuth ferrite/N-doped graphene and pure BiFeO 3 . X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy analyses indicate that Bi 25 FeO 40 crystalline phase is obtained with the addition of graphene, while BiFeO 3 is formed under the same hydrothermal conditions in the presence of N-doped graphene. Core-level and valence-band X-ray photoelectron spectroscopy analyses reveal a downward band bending of bismuth ferrite (∼0.5 eV) at the interface of the bismuth ferrite/(N-doped) graphene composites, which facilitates the electron transfer from bismuth ferrite to (N-doped) graphene and suppresses the recombination of photo-generated electron–hole pairs. This downward bending band alignment at the interface supposes to be the main mechanism underlying the enhanced photocatalytic activity of the bismuth ferrite/graphene composites that are currently of great interest in the photocatalysis field. - Highlights: • Bismuth ferrite/(N-doped) graphene composites were prepared by a hydrothermal method. • Bi 25 FeO 40 and BiFeO 3 were obtained with presence of graphene and N-graphene, respectively. • Bi 25 FeO 40 /graphene shows superior photocatalytic activity over BiFeO 3 and BiFeO 3 /N-graphene. • A downward band bending (∼0.5 eV) of bismuth ferrite exists at the composites interface. • The downward band bending supposes to be the mechanism for the enhanced photocatalytic activity.

  4. Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

    Science.gov (United States)

    Dubrovskii, V. G.

    2017-11-01

    Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

  5. Solution-processed copper-nickel nanowire anodes for organic solar cells

    Science.gov (United States)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  6. Adsorption of volatile polonium and bismuth species on metals in various gas atmospheres. Pt. I. Adsorption of volatile polonium and bismuth on gold

    Energy Technology Data Exchange (ETDEWEB)

    Maugeri, Emilio Andrea; Neuhausen, Joerg; Dressler, Rugard; Piguet, David; Voegele, Alexander; Schumann, Dorothea [Paul Scherrer Institut (PSI), Villigen (Switzerland). Lab. for Radiochemistry; Eichler, Robert [Paul Scherrer Institut (PSI), Villigen (Switzerland). Lab. for Radiochemistry; Bern Univ. (Switzerland). Dept. for Chemistry and Biochemistry; Rijpstra, Kim [Ghent Univ., Zwijnaarde (Belgium). Center for Molecular Modeling (CMM); Cottenier, Stefaan [Ghent Univ., Zwijnaarde (Belgium). Center for Molecular Modeling (CMM); Ghent Univ., Zwijnaarde (Belgium). Dept. of Materials Science and Engineering

    2016-07-01

    Polonium isotopes are considered the most hazardous radionuclides produced during the operation of accelerator driven systems (ADS) when lead-bismuth eutectic (LBE) is used as the reactor coolant and as the spallation target material. In this work the use of gold surfaces for capturing polonium from the cover gas of the ADS reactor was studied by thermochromatography. The results show that gaseous monoatomic polonium, formed in dry hydrogen, is adsorbed on gold at 1058 K. Its adsorption enthalpy was calculated as -250±7 kJ mol{sup -1}, using a Monte Carlo simulation code. Highly volatile polonium species that were observed in similar experiments in fused silica columns in the presence of moisture in both inert and reducing gas were not detected in the experiments studying adsorption on gold surfaces. PoO{sub 2} is formed in both dry and moist oxygen, and its interaction with gold is characterized by transport reactions. The interaction of bismuth, present in large amounts in the atmosphere of the ADS, with gold was also evaluated. It was found that bismuth has a higher affinity for gold, compared to polonium, in an inert, reducing, and oxidizing atmosphere. This fact must be considered when using gold as a material for filtering polonium in the cover gas of ADS.

  7. Bismuth knowledge during the Renaissance strengthened by its use in Italian lustres production

    Science.gov (United States)

    Padeletti, G.; Fermo, P.

    The knowledge of bismuth during the XV and XVI centuries represents an open question since, according to some authors, this element was confused with lead, tin and silver. On the contrary, G. Agricola (1494-1555), the pioneer of mineralogical science in Europe, in his two works (De Natura Fossilium, Lib X, 1546 and Bermannus Sive De Re Metallica Dialogus, 1528) asserts that bismuth was considered as an element distinct from the other metals at that time. This question gave rise to some interest, and von Lippmann in 1930 wrote a treatise dealing with the history of bismuth between 1400 and 1800. In this work we present the results obtained on Italian and Hispano-Moresque shards studied by means of X-ray diffraction, atomic absorption spectrometry with electrothermal atomisation, inductively coupled plasma optical emission spectrometry and scanning electron microscopy. It seems that our work could provide a new and important contribution to this debate, because we found bismuth in lustre composition of Renaissance shards produced in central Italy. Furthermore, we found that it could also be considered as a discriminating element between Italian and Hispano-Moresque productions, useful to assess their origin.

  8. Light-Induced Surface Reactions at the Bismuth Vanadate/Potassium Phosphate Interface.

    Science.gov (United States)

    Favaro, Marco; Abdi, Fatwa F; Lamers, Marlene; Crumlin, Ethan J; Liu, Zhi; van de Krol, Roel; Starr, David E

    2018-01-18

    Bismuth vanadate has recently drawn significant research attention as a light-absorbing photoanode due to its performance for photoelectrochemical water splitting. In this study, we use in situ ambient pressure X-ray photoelectron spectroscopy with "tender" X-rays (4.0 keV) to investigate a polycrystalline bismuth vanadate (BiVO 4 ) electrode in contact with an aqueous potassium phosphate (KPi) solution at open circuit potential under both dark and light conditions. This is facilitated by the creation of a 25 to 30 nm thick electrolyte layer using the "dip-and-pull" method. We observe that under illumination bismuth phosphate forms on the BiVO 4 surface leading to an increase of the surface negative charge. The bismuth phosphate layer may act to passivate surface states observed in photoelectrochemical measurements. The repulsive interaction between the negatively charged surface under illumination and the phosphate ions in solution causes a shift in the distribution of ions in the thin aqueous electrolyte film, which is observed as an increase in their photoelectron signals. Interestingly, we find that such changes at the BiVO 4 /KPi electrolyte interface are reversible upon returning to dark conditions. By measuring the oxygen 1s photoelectron peak intensities from the phosphate ions and liquid water as a function of time under dark and light conditions, we determine the time scales for the forward and reverse reactions. Our results provide direct evidence for light-induced chemical modification of the BiVO 4 /KPi electrolyte interface.

  9. Bismuth oxide nanotubes-graphene fiber-based flexible supercapacitors

    Science.gov (United States)

    Gopalsamy, Karthikeyan; Xu, Zhen; Zheng, Bingna; Huang, Tieqi; Kou, Liang; Zhao, Xiaoli; Gao, Chao

    2014-07-01

    Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics.Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics. Electronic supplementary information (ESI) available: Equations and characterization. SEM images of GGO, XRD and XPS of Bi2O3 NTs, HRTEM images and EDX Spectra of Bi2O3 NT5-GF, CV curves of Bi2O3NT5-GF, Bi2O3 NTs and bismuth nitrate in three-electrode system (vs. Ag/AgCl). CV and GCD curves of Bi2O3 NT1-GF and Bi2O3 NT3-GF. See DOI: 10.1039/c4nr02615b

  10. Studies on bismuth carboxylates—synthesis and characterization of ...

    Indian Academy of Sciences (India)

    crystalline modification (4 ) of the previously reported coordination polymer, bismuth tris(picolinate), [Bi(2– .... no significant change in the IR spectrum or the melting behaviour between 4 .... lens et al.7 There are moderate differences in the.

  11. A single drug for Helicobacter pylori infection: first results with a new bismuth triple monocapsule

    NARCIS (Netherlands)

    de Boer, W. A.; van Etten, R. J.; Schneeberger, P. M.; Tytgat, G. N.

    2000-01-01

    In this pilot study we investigated the efficacy and tolerability of a new monocapsule that contains a bismuth compound, tetracycline, and metronidazole. If proven to be effective, this monotherapy would turn the well-accepted multidrug regimen of standard bismuth-based triple therapy into an easy

  12. Nanowire sensor, sensor array, and method for making the same

    Science.gov (United States)

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  13. Bismuth silicate glass containing heavy metal oxide as a promising radiation shielding material

    Science.gov (United States)

    Elalaily, Nagia A.; Abou-Hussien, Eman M.; Saad, Ebtisam A.

    2016-12-01

    Optical and FTIR spectroscopic measurements and electron paramagnetic resonance (EPR) properties have been utilized to investigate and characterize the given compositions of binary bismuth silicate glasses. In this work, it is aimed to study the possibility of using the prepared bismuth silicate glasses as a good shielding material for γ-rays in which adding bismuth oxide to silicate glasses causes distinguish increase in its density by an order of magnitude ranging from one to two more than mono divalent oxides. The good thermal stability and high density of the bismuth-based silicate glass encourage many studies to be undertaken to understand its radiation shielding efficiency. For this purpose a glass containing 20% bismuth oxide and 80% SiO2 was prepared using the melting-annealing technique. In addition the effects of adding some alkali heavy metal oxides to this glass, such as PbO, BaO or SrO, were also studied. EPR measurements show that the prepared glasses have good stability when exposed to γ-irradiation. The changes in the FTIR spectra due to the presence of metal oxides were referred to the different housing positions and physical properties of the respective divalent Sr2+, Ba2+ and Pb2+ ions. Calculations of optical band gap energies were presented for some selected glasses from the UV data to support the probability of using these glasses as a gamma radiation shielding material. The results showed stability of both optical and magnetic spectra of the studied glasses toward gamma irradiation, which validates their irradiation shielding behavior and suitability as the radiation shielding candidate materials.

  14. Diamond nanowires: fabrication, structure, properties, and applications.

    Science.gov (United States)

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Guided Growth of Horizontal p-Type ZnTe Nanowires

    Science.gov (United States)

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  16. Basic principles of lead and lead-bismuth eutectic application in blanket of fusion reactors

    International Nuclear Information System (INIS)

    Beznosov, A.V.; Pinaev, S.S.; Muraviev, E.V.; Romanov, P.V.

    2005-01-01

    High magnetohydrodynamic pressure drop is an important issue for liquid metal blanket concepts. To decrease magnetohydrodynamic resistance authors propose to form insulating coatings on internal surface of blanket ducts at any moment of fusion reactor exploitation. It may be achieved easily if lead or lead-bismuth eutectic is used and technology of oxidative potential handling is applied. A number of experiments carried out in NNSTU show the availability of the proposed technology. It bases on formation of the insulating coatings that consist of the oxides of components of the structural materials and of the coolant components. In-situ value of the insulating coatings characteristics ρδ is ∼ 10 -5 Ohm·m 2 for steels and 5,0x10 -6 - 5,0x10 -5 Ohm·m 2 for vanadium alloys. Thermal cycling is possible during exploitation of a blanket. The experimental research of the insulating coatings properties during thermal cycling have shown that the coatings formed into the lead and lead-bismuth coolants save there insulating properties. Experience of many years is an undoubted advantage of the lead-bismuth coolant and less of the lead coolant in comparison with lithium. Russian Federation possesses of experience of exploitation of the research and industrial facilities, of experience of creation of the pumps, steamgenerators and equipment with heavy liquid metal coolants. The unique experience of designing, assembling and exploitation of the fission reactors with lead-bismuth coolant is also available. The problem of technology of lead and lead-bismuth coolants for power high temperature radioactive facilities has been solved. Accidents, emergency situations such as leakage of steamgenerators or depressurization of gas system in facilities with lead and lead-bismuth coolants have been explored and suppressed. (author)

  17. Pattern analysis of aligned nanowires in a microchannel

    International Nuclear Information System (INIS)

    Jeon, Young Jin; Kang, Hyun Wook; Ko, Seung Hwan; Sung, Hyung Jin

    2013-01-01

    An image processing method for evaluating the quality of nanowire alignment in a microchannel is described. A solution containing nanowires flowing into a microchannel will tend to deposit the nanowires on the bottom surface of the channel via near-wall shear flows. The deposited nanowires generally form complex directional structures along the direction of flow, and the physical properties of these structures depend on the structural morphology, including the alignment quality. A quantitative analysis approach to characterizing the nanowire alignment is needed to estimate the useful features of the nanowire structures. This analysis consists of several image processing methods, including ridge detection, texton analysis and autocorrelation function (ACF) calculation. The ridge detection method improved the ACF by extracting nanowire frames 1–2 pixels in width. Dilation filters were introduced to permit a comparison of the ACF results calculated from different images, regardless of the nanowire orientation. An ACF based on the FFT was then calculated over a square interrogation window. The alignment angle probability distribution was obtained using texton analysis. Monte Carlo simulations of artificially generated images were carried out, and the new algorithm was applied to images collected using two types of microscopy. (paper)

  18. Charging effects and surface potential variations of Cu-based nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Nunes, D., E-mail: daniela.gomes@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Calmeiro, T.R.; Nandy, S.; Pinto, J.V.; Pimentel, A.; Barquinha, P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Carvalho, P.A. [SINTEF Materials and Chemistry, PB 124 Blindern, NO-0314, Oslo (Norway); CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, 1049-001, Lisboa (Portugal); Walmsley, J.C. [SINTEF Materials and Chemistry, Materials and Nanotechnology, Høgskoleringen 5, 7034 Trondheim (Norway); Fortunato, E., E-mail: emf@fct.unl.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-02-29

    The present work reports charging effects and surface potential variations in pure copper, cuprous oxide and cupric oxide nanowires observed by electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM). The copper nanowires were produced by wet synthesis, oxidation into cuprous oxide nanowires was achieved through microwave irradiation and cupric oxide nanowires were obtained via furnace annealing in atmospheric conditions. Structural characterization of the nanowires was carried out by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. During the EFM experiments the electrostatic field of the positive probe charged negatively the Cu-based nanowires, which in turn polarized the SiO{sub 2} dielectric substrate. Both the probe/nanowire capacitance as well as the substrate polarization increased with the applied bias. Cu{sub 2}O and CuO nanowires behaved distinctively during the EFM measurements in accordance with their band gap energies. The work functions (WF) of the Cu-based nanowires, obtained by KPFM measurements, yielded WF{sub CuO} > WF{sub Cu} > WF{sub Cu{sub 2O}}. - Highlights: • Charge distribution study in Cu, Cu{sub 2}O and CuO nanowires through electrostatic force microscopy • Structural/surface defect role on the charge distribution along the Cu nanowires • Determination of the nanowire work functions by Kelvin probe force microscopy • Three types of nanowires give a broad idea of charge behavior on Cu based-nanowires.

  19. Soluble Lead and Bismuth Chalcogenidometallates: Versatile Solders for Thermoelectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hao [Department; Son, Jae Sung [Department; School; Dolzhnikov, Dmitriy S. [Department; Filatov, Alexander S. [Department; Hazarika, Abhijit [Department; Wang, Yuanyuan [Department; Hudson, Margaret H. [Department; Sun, Cheng-Jun [Advanced; Chattopadhyay, Soma [Physical; Talapin, Dmitri V. [Department; Center

    2017-07-27

    Here we report the syntheses of largely unexplored lead and bismuth chalcogenidometallates in the solution phase. Using N2H4 as the solvent, new compounds such as K6Pb3Te6·7N2H4 were obtained. These soluble molecular compounds underwent cation exchange processes using resin chemistry, replacing Na+ or K+ by decomposable N2H5+ or tetraethylammonium cations. They also transformed into stoichiometric lead and bismuth chalcogenide nanomaterials with the addition of metal salts. Such a versatile chemistry led to a variety of composition-matched solders to join lead and bismuth chalcogenides and tune their charge transport properties at the grain boundaries. Solution-processed thin films composed of Bi0.5Sb1.5Te3 microparticles soldered by (N2H5)6Bi0.5Sb1.5Te6 exhibited thermoelectric power factors (~28 μW/cm K2) comparable to those in vacuum-deposited Bi0.5Sb1.5Te3 films. The soldering effect can also be integrated with attractive fabrication techniques for thermoelectric modules, such as screen printing, suggesting the potential of these solders in the rational design of printable and moldable thermoelectrics.

  20. Synthesis of binary bismuth-cadmium oxide nanorods with sensitive electrochemical sensing performance

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yong [Xinjiang Univ., Xinjiang (China). School of Civil Engineering and Architecture; Pei, Lizhai; Wei, Tian [Anhui Univ. of Technology, Anhui (China). School of Materials Science and Engineering

    2017-07-15

    Binary bismuth-cadmium oxide nanorods have been synthesized by a simple hydrothermal process without templates and additives. X-ray diffraction and high-resolution transmission electron microscopy reveal that the nanorods possess single crystalline tetragonal Bi{sub 2}CdO{sub 4} phase. Scanning electron microscopy and transmission electron microscopy images show that the length and diameter of the nanorods are 20-300 nm and 5-10 μm, respectively. The formation of the binary bismuth-cadmium oxide nanorods is closely related to the hydrothermal parameters. The electrochemical sensing performance of the binary bismuth-cadmium oxide nanorods has been investigated using the nanorods as glassy carbon electrode modifiers. The detection limit is 0.19 μM with a linear range of 0.0005-2 mM. The nanorod-modified glassy carbon electrode exhibits good electrocatalytic activity toward L-cysteine and great application potential for electrochemical sensors.

  1. Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

    International Nuclear Information System (INIS)

    Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

    1990-01-01

    Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

  2. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    International Nuclear Information System (INIS)

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  3. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Energy Technology Data Exchange (ETDEWEB)

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  4. Study of material properties important for an optical property modulation-based radiation detection method for positron emission tomography

    OpenAIRE

    Tao, Li; Daghighian, Henry M.; Levin, Craig S.

    2017-01-01

    We compare the performance of two detector materials, cadmium telluride (CdTe) and bismuth silicon oxide (BSO), for optical property modulation-based radiation detection method for positron emission tomography (PET), which is a potential new direction to dramatically improve the annihilation photon pair coincidence time resolution. We have shown that the induced current flow in the detector crystal resulting from ionizing radiation determines the strength of optical modulation signal. A large...

  5. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  6. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  7. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  8. Ultraviolet photodetectors made from SnO2 nanowires

    International Nuclear Information System (INIS)

    Wu, Jyh-Ming; Kuo, Cheng-Hsiang

    2009-01-01

    SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

  9. Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2007-05-15

    Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

  10. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  11. Dimensional effects in semiconductor nanowires; Dimensionseffekte in Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Stichtenoth, Daniel

    2008-06-23

    Nanomaterials show new physical properties, which are determined by their size and morphology. These new properties can be ascribed to the higher surface to volume ratio, to quantum size effects or to a form anisotropy. They may enable new technologies. The nanowires studied in this work have a diameter of 4 to 400 nm and a length up to 100 {mu}m. The semiconductor material used is mainly zinc oxide (ZnO), zinc sulfide (ZnS) and gallium arsenide (GaAs). All nanowires were synthesized according to the vapor liquid solid mechanism, which was originally postulated for the growth of silicon whiskers. Respective modifications for the growth of compound semiconductor nanowires are discussed. Detailed luminescence studies on ZnO nanowires with different diameters show pronounced size effects which can be attributed to the origins given above. Similar to bulk material, a tuning of the material properties is often essential for a further functionalization of the nanowires. This is typical realized by doping the source material. It becomes apparent, that a controlled doping of nanowires during the growth process is not successful. Here an alternative method is chosen: the doping after the growth by ion implantation. However, the doping by ion implantation goes always along with the creation of crystal defects. The defects have to be annihilated in order to reach an activation of th introduced dopants. At high ion fluences and ion masses the sputtering of surface atoms becomes more important. This results in a characteristic change in the morphology of the nanowires. In detail, the doping of ZnO and ZnS nanowires with color centers (manganese and rare earth elements) is demonstrated. Especially, the intra 3d luminescence of manganese implanted ZnS nanostructures shows a strong dependence of the nanowire diameter and morphology. This dependence can be described by expanding Foersters model (which describes an energy transfer to the color centers) by a dimensional parameter

  12. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  13. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  14. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  15. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  16. Long-range magnetostatic interactions in arrays of nanowires

    CERN Document Server

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  17. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yong, E-mail: yongwen1982@163.com [School of Civil Engineering and Architecture, Xinjiang University (China); Pei, Li-zhai; Wei, Tian [chool of Materials Science and Engineering, Anhui University of Technology (China)

    2017-05-15

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi{sub 2}O{sub 4} and cubic LiBi{sub 12}O{sub 18.50} phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  18. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    International Nuclear Information System (INIS)

    Wen, Yong; Pei, Li-zhai; Wei, Tian

    2017-01-01

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi_2O_4 and cubic LiBi_1_2O_1_8_._5_0 phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  19. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  20. Constricted nanowire with stabilized magnetic domain wall

    International Nuclear Information System (INIS)

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  1. Growth morphology and structure of bismuth thin films on GaSb(110)

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstructio...... that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved....

  2. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Science.gov (United States)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  3. Nanowires and nanobelts, v.2 nanowires and nanobelts of functional materials

    CERN Document Server

    Wang, Zhong Lin

    2010-01-01

    Nanowires, nanobelts, nanoribbons, nanorods ..., are a new class of quasi-one-dimensional materials that have been attracting a great research interest in the last few years. These non-carbon based materials have been demonstrated to exhibit superior electrical, optical, mechanical and thermal properties, and can be used as fundamental building blocks for nano-scale science and technology, ranging from chemical and biological sensors, field effect transistors to logic circuits. Nanocircuits built using semiconductor nanowires demonstrated were declared a ""breakthrough in science"" by Science

  4. "Chemical contraction" in rubidium-bismuth melts

    Science.gov (United States)

    Khairulin, R. A.; Abdullaev, R. N.; Stankus, S. V.

    2017-10-01

    The density and thermal expansion of liquid rubidium and rubidium-bismuth alloy containing 25.0 at % Bi were measured by the gamma-ray attenuation technique at temperatures from liquidus to 1000 K. The results of this study were compared with the data obtained by other authors. The molar volume of the Rb75Bi25 melt strongly deviates from the additivity rule for ideal solutions.

  5. Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

    Science.gov (United States)

    Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

    2018-06-01

    Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

  6. Carrier gas effects on aluminum-catalyzed nanowire growth

    International Nuclear Information System (INIS)

    Ke, Yue; Hainey, Mel Jr; Won, Dongjin; Weng, Xiaojun; Eichfeld, Sarah M; Redwing, Joan M

    2016-01-01

    Aluminum-catalyzed silicon nanowire growth under low-pressure chemical vapor deposition conditions requires higher reactor pressures than gold-catalyzed growth, but the reasons for this difference are not well understood. In this study, the effects of reactor pressure and hydrogen partial pressure on silicon nanowire growth using an aluminum catalyst were studied by growing nanowires in hydrogen and hydrogen/nitrogen carrier gas mixtures at different total reactor pressures. Nanowires grown in the nitrogen/hydrogen mixture have faceted catalyst droplet tips, minimal evidence of aluminum diffusion from the tip down the nanowire sidewalls, and significant vapor–solid deposition of silicon on the sidewalls. In comparison, wires grown in pure hydrogen show less well-defined tips, evidence of aluminum diffusion down the nanowire sidewalls at increasing reactor pressures and reduced vapor–solid deposition of silicon on the sidewalls. The results are explained in terms of a model wherein the hydrogen partial pressure plays a critical role in aluminum-catalyzed nanowire growth by controlling hydrogen termination of the silicon nanowire sidewalls. For a given reactor pressure, increased hydrogen partial pressures increase the extent of hydrogen termination of the sidewalls which suppresses SiH_4 adsorption thereby reducing vapor–solid deposition of silicon but increases the surface diffusion length of aluminum. Conversely, lower hydrogen partial pressures reduce the hydrogen termination and also increase the extent of SiH_4 gas phase decomposition, shifting the nanowire growth window to lower growth temperatures and silane partial pressures. (paper)

  7. Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

    Science.gov (United States)

    Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

    2012-07-01

    Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

  8. Biofunctionalization of zinc oxide nanowires for DNA sensory applications

    Directory of Open Access Journals (Sweden)

    Rudolph Bettina

    2011-01-01

    Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

  9. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

    Directory of Open Access Journals (Sweden)

    Huijie Li

    2016-10-01

    Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

  10. Aerosol deposition of (Cu,Ti) substituted bismuth vanadate films

    Energy Technology Data Exchange (ETDEWEB)

    Exner, Jörg, E-mail: Functional.Materials@Uni-Bayreuth.de [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany); Fuierer, Paul [Materials and Metallurgical Engineering Department, New Mexico Institute of Mining and Technology, Socorro, NM 87801 (United States); Moos, Ralf [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany)

    2014-12-31

    Bismuth vanadate, Bi{sub 4}V{sub 2}O{sub 11}, and related compounds with various metal (Me) substitutions, Bi{sub 4}(Me{sub x}V{sub 1−x}){sub 2}O{sub 11−δ}, show some of the highest ionic conductivities among the known solid oxide electrolytes. Films of Cu and Ti substituted bismuth vanadate were prepared by an aerosol deposition method, a spray coating process also described as room temperature impact consolidation. Resultant films, several microns in thickness, were dense with good adhesion to the substrate. Scanning electron microscopy and high temperature X-ray diffraction were used to monitor the effects of temperature on the structure and microstructure of the film. The particle size remained nano-scale while microstrain decreased rapidly up to 500 °C, above which coarsening and texturing increased rapidly. Impedance measurements of films deposited on inter-digital electrodes revealed an annealing effect on the ionic conductivity, with the conductivity exceeding that of a screen printed film, and approaching that of bulk ceramic. - Highlights: • Cu and Ti doped bismuth vanadate films were prepared by aerosol deposition (AD). • Dense 3–5 μm thick films were deposited on alumina, silicon and gold electrodes. • Annealing of the AD-layer increases the conductivity by 1.5 orders of magnitude. • Effect of temperature on structure and microstructure was investigated.

  11. Surface enhanced infrared spectroscopy using interacting gold nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Neubrech, Frank; Weber, Daniel; Pucci, Annemarie [Kirchhoff-Institut fuer Physik, Heidelberg (Germany); Shen, Hong [Universite Troyes, Troyes (France); Lamy de la Chapelle, Marc [Universite Paris 13, Bobigny (France)

    2009-07-01

    We performed surface enhanced infrared spectroscopy (SEIRS) of molecules adsorbed on gold nanowires using synchrotron light of the ANKA IR-beamline at the Forschungszentrum Karlsruhe (Germany). Arrays of gold nanowires with interparticle spacings down to 30nm were prepared by electron beam lithography. The interparticle distance was reduced further by wet-chemically increasing the size of the gold nanowires. The growth of the wires was proofed using IR spectroscopy as well as scanning electron microscopy. After this preparation step, appropriate arrays of nanowires with an interparticle distance down to a few nanometers were selected to demonstrate the surface enhanced infrared spectroscopy of one monolayer octadecanthiol (ODT). As know from SEIRS studies using single gold nanowires, the spectral position of the antenna-like resonance in relation to the absorption bands of ODT (2850cm-1 and 2919cm-1) is crucial for both, the lineshape of the molecular vibration and the signal enhancement. In contrast to single nanowires studies, a further increase of the enhanced signals is expected due to the interaction of the electromagnetic fields of the close-by nanowires.

  12. Synthesis and electrical characterization of tungsten oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  13. A circulating loop tester for liquid alloyed metal of lead-bismuth

    International Nuclear Information System (INIS)

    Kitano, Teruaki; Ono, Mikinori; Kamata, Kinya

    2002-01-01

    Mitsui Engineering and Shipbuilding Co., Ltd. (MES) had focused to merits of this lead-bismuth alloy, to actively carry out many works on this field such as an experience of development of heat exchanger at industrial level of intercourse with IPPE (Institute of Physics and Power Engineering) in Russia with an experience of using results for 80 years on coolant for nuclear reactor. Before about 20 years, MES developed a heat exchanger for installation at a lead-zinc separation process in a refinery in Japan under cooperation of the Mitsui Metal and Mine Co., Ltd., to deliver it for a power generation system at the Hachinohe refinery. As the heat exchanger aims at control of cooling in the separation process, it also contributes to power generation of about 4,300 kW, and now it continues to separate and contribute to self-power generation in the refinery. The heat exchanger is filled with the liquid alloyed metal of lead-bismuth for an intermediate thermal medium in its casing. The metal has some merits such as inactivity to air and water, high boiling point (1,700 centigrade), almost no volume change at its coagulation, and its minus reactivity coefficient. However, the metal has some problems to be solved, such as its steel corrosion, its purification, and control technology. To grow up lead-bismuth technology to a nuclear energy technology in Japan, the lead-bismuth circulating loop tester was produced on May, 2001, to establish application technology on this system to nuclear energy technology in Japan. (G.K.)

  14. Effect of bismuth ion substitution on structural properties of zinc ferrite nanoparticles

    Directory of Open Access Journals (Sweden)

    Naraavula Suresh Kumar

    2016-06-01

    Full Text Available Bismuth doped nano zinc ferrite particles having the general formula ZnFe2-xBixO4 (x = 0.00, 0.05, 0.10, 0.15, 0.20 and 0.25 were synthesized by sol-gel combustion method. The effect of bismuth doping on structural properties were investigated. The X-ray diffraction (XRD spectra confirm the single phase cubic spinel structure. The average crystallite sizes of all the samples were determined by Debye-Scherrer equation and are in the range 16–20 nm. The lattice parameter increases with the increase of bismuth ion concentration. This is due to the larger ionic radius of Bi3+ ions substituting smaller Fe3+ ions at octahedral sites (B-sites. The surface morphology of all compounds was studied by scanning electron microscope (SEM. The microstructure analysis and the particle size were examined by transmission electron microscope (TEM. The compositional stoichiometry of these samples was verified by energy dispersive spectroscopy (EDS analysis.

  15. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  16. Quantum nernst effect in a bismuth single crystal

    International Nuclear Information System (INIS)

    Matsuo, M.; Endo, A.; Hatano, N.; Nakamura, H.; Shirasaki, R.; Sugihara, K.

    2009-07-01

    We calculate the phonon-drag contribution to the transverse (Nernst) thermoelectric power S yx in a bismuth single crystal subjected to a quantizing magnetic field. The calculated heights of the Nernst peaks originating from the hole Landau levels and their temperature dependence reproduce the right order of magnitude for those of the pronounced magneto-oscillations recently reported by Behnia et al. A striking experimental finding that S yx is much larger than the longitudinal (Seebeck) thermoelectric power S xx can be naturally explained as the effect of the phonon drag, combined with the well-known relation between the longitudinal and the Hall resistivity ρ xx >> |ρ yx | in a semi-metal bismuth. The calculation that includes the contribution of both holes and electrons suggests that some of the hitherto unexplained minor peaks located roughly at the fractional filling of the hole Landau levels are attributable to the electron Landau levels. (author)

  17. Bio-assisted synthesis and characterization of nanostructured bismuth (III) sulphide using Clostridium acetobutylicum

    International Nuclear Information System (INIS)

    Kamaraj, Sathish Kumar; Venkatachalam, Ganesh; Arumugam, Palaniappan; Berchmans, Sheela

    2014-01-01

    Nanostructured bismuth (III) sulphide is synthesized at room temperature using a hydrogen sulphide producing microorganism namely Clostridium acetobutylicum. On contrary to chemical routes involving both the high and room temperature methods, the present experimental procedure involves a bio-assisted approach. This method is free from the usage of toxic and hazardous chemicals making it an environment friendly route. The synthesized bismuth sulphide is characterized using transmission electron microscope (TEM), powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). From our experiments we find that bismuth sulphide produced using this bio-assisted approach exhibits a hexagonal shaped plate-like structures and is stabilized by the extracellular proteins present in the culture medium. - Graphical abstract: A green chemistry approach towards the synthesis of bismuth (III) sulphide nanostructures at room temperature using a hydrogen sulphide producing microorganism namely, Clostridium acetobutylicum is demonstrated. - Highlights: • Environmentally benign (greener) route towards synthesis of Bi 2 S 3 nanostructures. • Bio-assisted synthesis of Bi 2 S 3 at room temperature using Clostridium acetobutylicum. • Extracellular proteins in H 2 S producing microorganism as stabilizer for Bi 2 S 3 NPs. • Hexagonal platelets of Bi 2 S 3 possessing an orthorhombic crystalline structure

  18. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  19. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    Science.gov (United States)

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

  20. Study of magnesium bismuth alloys with a composition close to Mg3Bi2

    International Nuclear Information System (INIS)

    Tournier, Jean

    1964-01-01

    The author reports the study of magnesium-bismuth alloys with a high bismuth content. These alloys were aimed to be irradiated in a pile at a temperature of about 300 C, and thus had specific requirements regarding their bismuth content, a high density, a high fusion point with also a pressure strength constraint. The author first reports the determination of an alloy grade which could meet these requirements, and then reports issues related to their elaboration by performing optical micrography and X ray analysis in order to investigate their homogeneity. Then, the alloy hot compression strength has been assessed under significantly higher constraining conditions. Fusion point and density have also been measured. As a fast alloy degradation has been noticed, brief corrosion tests have been performed

  1. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu

    2015-12-02

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  2. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu; Yassitepe, Emre; Voznyy, Oleksandr; Janmohamed, Alyf; Lan, Xinzheng; Levina, Larissa; Comin, Riccardo; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  3. Determination of zinc and cadmium with characterized Electrodes of carbon and polyurethane modified by a bismuth film

    Directory of Open Access Journals (Sweden)

    Jossy Karla Brasil Bernardelli

    2011-09-01

    Full Text Available This study aims to use electrodes modified with bismuth films for the determination of zinc and cadmium. The film was electrodeposited ex situ on a composite carbon electrode with polyurethane and 2% metallic bismuth (2BiE and on a carbon bar electrode (CBE. The electrodes were characterized by scanning electron microscopy and energy dispersive spectroscopy. Through differential pulse anodic stripping voltammetry, the electrodes 2BiE and CBE containing bismuth films showed a limit of detection (LOD of 5.56 × 10-5 and 3.07 × 10-5 g.L-1 for cadmium and 1.24 × 10-4 and 1.53 × 10-4 g.L-1 for zinc, respectively. The presence of a bismuth film increased the sensitivity of both electrodes.

  4. Guiding modes of semi-infinite nanowire and their dispersion character

    International Nuclear Information System (INIS)

    Sun, Yuming; Su, Yuehua; Dai, Zhenhong; Wang, Weitian

    2014-01-01

    Conventionally, the optical properties of finite semiconductor nanowires have been understood and explained in terms of an infinite nanowire. This work describes completely different photonic modes for a semi-finite nanowire based on a rigorous theoretical method, and the implications for the finite one. First, the special eigenvalue problem charactered by the end results in a distinctive mode spectrum for the semi-infinite dielectric nanowire. Meanwhile, the results show hybrid degenerate modes away from cutoff frequency, and transverse electric–transverse magnetic (TE–TM) degeneracy. Second, accompanying a different mode spectrum, a semi-finite nanowire also shows a distinctive dispersion relation compared to an infinite nanowire. Taking a semi-infinite, ZnO nanowire as an example, we find that the ℏω−k z space is not continuous in the interested photon energy window, implying that there is no uniform polariton dispersion relation for semi-infinite nanowire. Our method is shown correct through a field-reconstruction for a thin ZnO nanowire (55 nm in radius) and position determination of FP modes for a ZnO nanowire (200 nm in diameter). The results are of great significance to correctly understand the guiding and lasing mechanisms of semiconductor nanowires. (paper)

  5. Catalyst-free, III-V nanowire photovoltaics

    Science.gov (United States)

    Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

    2014-05-01

    We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

  6. On the thermomechanical deformation of silver shape memory nanowires

    International Nuclear Information System (INIS)

    Park, Harold S.; Ji, Changjiang

    2006-01-01

    We present an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations. We first demonstrate that silver nanowires can show both shape memory and pseudoelastic behavior, then perform uniaxial tensile loading of the shape memory nanowires at various deformation temperatures, strain rates and heat transfer conditions. The simulations show that the resulting mechanical response of the shape memory nanowires depends strongly upon the temperature during deformation, and can be fundamentally different from that observed in bulk polycrystalline shape memory alloys. The energy and temperature signatures of uniaxially loaded silver shape memory nanowires are correlated to the observed nanowire deformation, and are further discussed in comparison to bulk polycrystalline shape memory alloy behavior

  7. Evidence for a temperature-driven structural transformation in liquid bismuth

    International Nuclear Information System (INIS)

    Greenberg, Y.; Dariel, M.P.; Greenberg, Y.; Yahel, E.; Caspi, E.N.; Makov, G.; Benmore, C.; Beuneu, B.

    2009-01-01

    The thermodynamic properties of liquid bismuth have been explored from the melting point to 1100 C degrees by high-resolution measurements of the density, the heat capacity and the static structure factor. These physical properties display a number of anomalies. In particular, we have observed evidence for the presence of a temperature-driven liquid-liquid structural transformation that takes place at ambient pressure. The latter is characterized by a density discontinuity that occurs at 740 C degrees. Differential thermal analysis measurements revealed the endo-thermal nature of this transformation. A rearrangement of liquid bismuth structure was found by neutron diffraction measurements, supporting the existence of a liquid-liquid transformation far above the liquidus. (authors)

  8. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-12-15

    Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

  9. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  10. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  11. Multi-spectral optical absorption in substrate-free nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  12. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  13. Orientation-controlled synthesis and magnetism of single crystalline Co nanowires

    International Nuclear Information System (INIS)

    Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian

    2012-01-01

    Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.

  14. Piezoresistance of top-down suspended Si nanowires

    International Nuclear Information System (INIS)

    Koumela, A; Mercier, D; Dupre, C; Jourdan, G; Marcoux, C; Ollier, E; Duraffourg, L; Purcell, S T

    2011-01-01

    Measurements of the gauge factor of suspended, top-down silicon nanowires are presented. The nanowires are fabricated with a CMOS compatible process and with doping concentrations ranging from 2 x 10 20 down to 5 x 10 17 cm -3 . The extracted gauge factors are compared with results on identical non-suspended nanowires and with state-of-the-art results. An increase of the gauge factor after suspension is demonstrated. For the low doped nanowires a value of 235 is measured. Particular attention was paid throughout the experiments to distinguishing real resistance change due to strain modulation from resistance fluctuations due to charge trapping. Furthermore, a numerical model correlating surface charge density with the gauge factor is presented. Comparison of the simulations with experimental measurements shows the validity of this approach. These results contribute to a deeper understanding of the piezoresistive effect in Si nanowires.

  15. Preparation and Characterization of Tin Oxide Nanowires

    Directory of Open Access Journals (Sweden)

    A. Kabiri

    2013-12-01

    Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

  16. Nanowires: properties, applications and synthesis via porous anodic ...

    Indian Academy of Sciences (India)

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  17. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

    2017-01-01

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  18. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jürgen

    2017-10-05

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  19. A superconducting nanowire can be modeled by using SPICE

    Science.gov (United States)

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  20. Ultrathin bismuth nanosheets from in situ topotactic transformation for selective electrocatalytic CO2 reduction to formate.

    Science.gov (United States)

    Han, Na; Wang, Yu; Yang, Hui; Deng, Jun; Wu, Jinghua; Li, Yafei; Li, Yanguang

    2018-04-03

    Electrocatalytic carbon dioxide reduction to formate is desirable but challenging. Current attention is mostly focused on tin-based materials, which, unfortunately, often suffer from limited Faradaic efficiency. The potential of bismuth in carbon dioxide reduction has been suggested but remained understudied. Here, we report that ultrathin bismuth nanosheets are prepared from the in situ topotactic transformation of bismuth oxyiodide nanosheets. They process single crystallinity and enlarged surface areas. Such an advantageous nanostructure affords the material with excellent electrocatalytic performance for carbon dioxide reduction to formate. High selectivity (~100%) and large current density are measured over a broad potential, as well as excellent durability for >10 h. Its selectivity for formate is also understood by density functional theory calculations. In addition, bismuth nanosheets were coupled with an iridium-based oxygen evolution electrocatalyst to achieve efficient full-cell electrolysis. When powered by two AA-size alkaline batteries, the full cell exhibits impressive Faradaic efficiency and electricity-to-formate conversion efficiency.

  1. Magnetic phase shift reconstruction for uniformly magnetized nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Akhtari-Zavareh, Azadeh [Department of Physics, Simon Fraser University, Burnaby, British Columbia (Canada); De Graef, Marc [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA (United States); Kavanagh, Karen L. [Department of Physics, Simon Fraser University, Burnaby, British Columbia (Canada)

    2017-01-15

    A new analytical model is developed for the magnetic phase shift of uniformly magnetized nanowires with ideal cylindrical geometry. The model is applied to experimental data from off-axis electron holography measurements of the phase shift of CoFeB nanowires, and the saturation induction of a selected wire, as well as its radius, aspect ratio, position and orientation, is determined by fitting the model parameters. The saturation induction value of 1.7 T of the CoFeB nanowire is found to be similar, to be within the measurement error, to values reported in the literature. - Highlights: • We describe a mathematical model for the magnetic phase shift of a cylindrical nanowire. • We discuss electron holography experiments on magnetic nanowires. • We obtain an accurate fit of the measured magnetic phase shift profile. • We extract the magnetic induction of the nanowire from the phase shift model. • The magnetic induction of 1.7 T agrees well with literature results.

  2. A shortcut hydrothermal strategy for the synthesis of zinc nanowires

    International Nuclear Information System (INIS)

    Hu Jianqiang; Chen Zhiwu; Xie Jingsi; Yu Ying

    2008-01-01

    Synthesis of metal nanowires has opened many new possibilities for designing ideal building blocks for future nanodevices. In this work, zinc nanowires with lengths of micrometre magnitude were synthesized in high yield by a shortcut hydrothermal strategy. The synthesis involves a template-free, non-seed and catalyst-free solution-phase process to high-quality zinc nanowires, which is low-cost and proceeds at relatively short time. In this process, zinc nanowires were prepared through the reduction of zinc acetate with absolute ethanol in the presence of silver nitrate under hydrothermal atmosphere. The strategy suggests that silver ion plays a vital role in the synthesis of zinc nanowires, without which the substituted product is zinc oxide nanowires. X-ray diffraction and energy-dispersive x-ray spectroscopy measurements confirm the final formation of zinc nanowires and component transformation from zinc oxide nanowires in the introduction of silver ion. We believe that with the efficient synthesis, longer zinc nanowires can be fabricated and may find potential applications for superconductors and nanodevices. (fast track communication)

  3. Study of bismuth minerals belonging to the mineralogical collection from the National Museum

    International Nuclear Information System (INIS)

    Baptista, A.; Baptista, N.R.

    1991-09-01

    With the purpose of searching the presence of Tellurium minerals in the Ouro Preto-Mariana country, Minas Gerais State, and considering the existence of a great number of minerals in which this element come across allied with Bismuth, samples of the mineralogical collection of the Museu Nacional, proceeding that region and classified as Bismuth minerals were studied by X-ray fluorescence analysis and diffractometric analysis. In this report the results of this research are presented. (Author)

  4. Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

    Directory of Open Access Journals (Sweden)

    Rudnik E.

    2015-04-01

    Full Text Available Electrochemistry of lead telluride stationary electrode was studied in nitric acid solutions of pH 1.5-3.0. E-pH diagram for Pb-Te-H2O system was calculated. Results of cyclic voltammetry of Pb, Te and PbTe were discussed in correlation with thermodynamic predictions. Anodic dissolution of PbTe electrode at potential approx. -100÷50 mV (SCE resulted in tellurium formation, while above 300 mV TeO2 was mainly produced. The latter could dissolve to HTeO+2 under acidic electrolyte, but it was inhibited by increased pH of the bath.

  5. Cadmium telluride gamma-radiation detectors with a high energy resolution

    International Nuclear Information System (INIS)

    Alekseeva, L.A.; Dorogov, P.G.; Ivanov, V.I.; Khusainov, A.K.

    1985-01-01

    This paper considers the possibility of improving the energy resolution of cadmium telluride gamma-radiation detectors through the choice of the geometry and size of the sensitive region of the detector. The optimum ratio of the product of the mobility and lifetime for electrons to the same product for holes from the point of view of energy resolution is greater than or equal to 10 2 for a detector of spherical geometry and should be less than or equal to 10 for a cylindrical geometry and approximately 1 for a planar geometry. The optimum values of the major and minor radii of a spherical detector are calculated

  6. Evaluation of the gamma radiation shielding parameters of bismuth modified quaternary glass system

    Science.gov (United States)

    Kaur, Parminder; Singh, K. J.; Thakur, Sonika

    2018-05-01

    Glasses modified with heavy metal oxides (HMO) are an interesting area of research in the field of gamma-ray shielding. Bismuth modified lithium-zinc-borate glasses have been studied whereby bismuth oxide is added from 0 to 50 mol%. The gamma ray shielding properties of the glasses were evaluated at photon energy 662 keV with the help of XMuDat computer program by using the Hubbell and Seltzer database. Various gamma ray shielding parameters such as attenuation coefficient, shield thickness in terms of half and tenth value layer, effective atomic number have been studied in this work. A useful comparison of this glass system has been made with standard radiation shielding concretes viz. ordinary, barite and iron concrete. The glass samples containing 20 to 50 mol% bismuth oxide have shown better gamma ray shielding properties and hence have the potential to become good radiation absorbers.

  7. Potentiation of the action of metronidazole on Helicobacter pylori by omeprazole and bismuth subcitrate

    DEFF Research Database (Denmark)

    Andersen, L P; Colding, H; Kristiansen, J E

    2000-01-01

    test (Etest). With 0.5 MIC of either of the two drugs, the susceptibility of all H. pylori4 mg/l) reverted to being metronidazole sensitive. These results suggested that either bismuth salts or proton pump inhibitors may be effective in the treatment of some infections with metronidazole-resistant H...... to regimens that include proton pump inhibitors. In the present study, the synergistic effect of subinhibitory concentrations (0.25-0.5 MIC) of either bismuth subcitrate or omeprazole with metronidazole on the susceptibility of 42 H. pylori strains was investigated by agar dilution method and the Epsilometer......Treatment failures using triple therapy that include metronidazole, are common in patients infected with metronidazole-resistant Helicobacter pylori in the gastric mucosa. Higher eradication rates in such patients have been described when treatment regimens include bismuth salts compared...

  8. Synthesis and characterization of bismuth alkaline titanate powders

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atorresh@ipn.mx [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Dominguez-Crespo, M.A. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Hernandez-Perez, M.A. [ESIQIE, Metalurgia, Instituto Politecnico Nacional, Mexico, D. F (Mexico); Garcia-Zaleta, D.S. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Brachetti-Sibaja, S.B. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Instituto Tecnologico de Ciudad Madero, Av. 1o. de Mayo esq. Sor Juana Ines de la Cruz s/n Col. Los Mangos C.P.89440 Cd. Madero Tamaulipas (Mexico)

    2011-06-15

    In this work, samples of bismuth alkaline titanate, (K{sub 0.5}Na{sub 0.5}){sub (2-x/2)}Bi{sub (x/6)}TiO{sub 3}, (x = 0.05-0.75) have been prepared by conventional ceramic technique and molten salts. Metal oxides or carbonates powders were used as starting raw materials. The crystalline phase of the synthesized powders was identified by the X-ray diffraction (XRD) and particle morphology was characterized by scanning electron microscopy (SEM). Solid state reaction method was unsuccessful to obtain pellets. From XRD results, a rhombohedral structure was detected and the parameter lattice were estimated to be a = 5.5478 A and {alpha} = 59.48{sup o}. These parameters were used to refine the structure by Rietveld analysis. SEM results showed several morphologies. Apparently, bismuth is promoting the grain growth whose sizes vary from 30 nm to 180 nm It is expected that these materials can be utilized in practical applications as substitutes for lead zirconatetitanate (PZT)-based ceramics.

  9. Bismuth, lansoprazole, amoxicillin and metronidazole or clarithromycin as first-line Helicobacter pylori therapy.

    Science.gov (United States)

    Zhang, Wei; Chen, Qi; Liang, Xiao; Liu, Wenzhong; Xiao, Shudong; Graham, David Y; Lu, Hong

    2015-11-01

    To evaluate the efficacy and tolerability of replacing tetracycline with amoxicillin in bismuth quadruple therapy. Subjects who were infected with Helicobacter pylori and naïve to treatment were randomly (1:1) assigned to receive a 14-day modified bismuth quadruple therapy: lansoprazole 30 mg, amoxicillin 1 g, bismuth potassium citrate 220 mg (elemental bismuth), twice a day with metronidazole 400 mg four times a day (metronidazole group) or clarithromycin 500 mg twice a day (clarithromycin group). Six weeks after treatment, H. pylori eradication was assessed by 13C-urea breath test. Antimicrobial susceptibility was assessed by the twofold agar dilution method. This was a non-inferiority trial. Two hundred and fifteen subjects were randomised. Metronidazole and clarithromycin containing regimens achieved high cure rates: 94 of 97 (96.9%, 95% CI 93.5% to 100%) and 93 of 98 (94.9%, 95% CI 90.5% to 99.3%) by per-protocol and 88.9% (95% CI 83.0% to 94.8%) and 88.8% (95% CI 82.8% to 94.8%) by intention-to-treat, respectively. Amoxicillin, metronidazole and clarithromycin resistance rates were 1.5%, 45.5% and 26.5%, respectively. Only clarithromycin resistance reduced treatment success (e.g., susceptible 98.6%, resistant 76.9%, p=0.001). Adverse events were more common in the metronidazole group. These results suggest that amoxicillin can substitute for tetracycline in modified 14 day bismuth quadruple therapy as first-line treatment and still overcome metronidazole resistance in areas with high prevalence of metronidazole and clarithromycin resistance. Using clarithromycin instead of metronidazole was only effective in the presence of susceptible strains. NCT02175901. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

  10. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  11. Monte Carlo simulations for dose enhancement in cancer treatment using bismuth oxide nanoparticles implanted in brain soft tissue.

    Science.gov (United States)

    Taha, Eslam; Djouider, Fathi; Banoqitah, Essam

    2018-03-26

    The objective of this work is to study the dosimetric performances of bismuth oxide nanoparticles implanted in tumors in cancer radiotherapy. GEANT4 based Monte Carlo numerical simulations were performed to assess dose enhancement distributions in and around a 1 × 1 × 1 cm 3 tumor implanted with different concentrations of bismuth oxide and irradiated with low energies 125 I, 131 Cs, and 103 Pd radioactive sources. Dose contributions were considered from photoelectrons, Auger electrons, and characteristic X-rays. Our results show the dose enhancement increased with increasing both bismuth oxide concentration in the target and photon energy. A dose enhancement factor up to 18.55 was obtained for a concentration of 70 mg/g of bismuth oxide in the tumor when irradiated with 131 Cs source. This study showed that bismuth oxide nanoparticles are innovative agents that could be potentially applicable to in vivo cancer radiotherapy due to the fact that they induce a highly localized energy deposition within the tumor.

  12. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  13. Nano-soldering of magnetically aligned three-dimensional nanowire networks

    International Nuclear Information System (INIS)

    Gao Fan; Gu Zhiyong

    2010-01-01

    It is extremely challenging to fabricate 3D integrated nanostructures and hybrid nanoelectronic devices. In this paper, we report a simple and efficient method to simultaneously assemble and solder nanowires into ordered 3D and electrically conductive nanowire networks. Nano-solders such as tin were fabricated onto both ends of multi-segmented nanowires by a template-assisted electrodeposition method. These nanowires were then self-assembled and soldered into large-scale 3D network structures by magnetic field assisted assembly in a liquid medium with a high boiling point. The formation of junctions/interconnects between the nanowires and the scale of the assembly were dependent on the solder reflow temperature and the strength of the magnetic field. The size of the assembled nanowire networks ranged from tens of microns to millimeters. The electrical characteristics of the 3D nanowire networks were measured by regular current-voltage (I-V) measurements using a probe station with micropositioners. Nano-solders, when combined with assembling techniques, can be used to efficiently connect and join nanowires with low contact resistance, which are very well suited for sensor integration as well as nanoelectronic device fabrication.

  14. Nanowire Electrodes for Advanced Lithium Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  15. Nanowire Electrodes for Advanced Lithium Batteries

    Directory of Open Access Journals (Sweden)

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  16. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  17. Liquid Lead-Bismuth Materials Test Loop

    International Nuclear Information System (INIS)

    Tcharnotskaia, Valentina; Ammerman, Curtt; Darling, Timothy; King, Joe; Li, Ning; Shaw, Don; Snodgrass, Leon; Woloshun, Keith

    2002-01-01

    We designed and built the Liquid Lead-Bismuth Materials Test Loop (MTL) to study the materials behavior in a flow of molten lead-bismuth eutectic (LBE). In this paper we present a description of the loop with main components and their functions. Stress distribution in the piping due to sustained, occasional and expansion loads is shown. The loop is designed so that a difference of 100 deg. C can be attained between the coldest and the hottest parts at a nominal flow rate of 8.84 GPM. Liquid LBE flow can be activated by a mechanical sump pump or by natural convection. In order to maintain a self-healing protective film on the surface of the stainless steel pipe, a certain concentration of oxygen has to be maintained in the liquid metal. We developed oxygen sensors and an oxygen control system to be implemented in the loop. The loop is outfitted with a variety of instruments that are controlled from a computer based data acquisition system. Initial experiments include preconditioning the loop, filling it up with LBE, running at uniform temperature and tuning the oxygen control system. We will present some preliminary results and discuss plans for the future tests. (authors)

  18. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  19. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  20. AC surface photovoltage of indium phosphide nanowire networks

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J.; Kobayashi, Nobuhiko P. [California Univ., Santa Cruz, CA (United States). Baskin School of Engineering; California Univ., Santa Cruz, CA (US). Nanostructured Energy Conversion Technology and Research (NECTAR); NASA Ames Research Center, Moffett Field, CA (United States). Advanced Studies Laboratories

    2012-06-15

    Surface photovoltage is used to study the dynamics of photogenerated carriers which are transported through a highly interconnected three-dimensional network of indium phosphide nanowires. Through the nanowire network charge transport is possible over distances far in excess of the nanowire lengths. Surface photovoltage was measured within a region 10.5-14.5 mm from the focus of the illumination, which was chopped at a range of frequencies from 15 Hz to 30 kHz. Carrier dynamics were modeled by approximating the nanowire network as a thin film, then fitted to experiment suggesting diffusion of electrons and holes at approximately 75% of the bulk value in InP but with significantly reduced built-in fields, presumably due to screening by nanowire surfaces. (orig.)

  1. Biotemplated synthesis of PZT nanowires.

    Science.gov (United States)

    Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

    2013-01-01

    Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

  2. Performance of solid electrolyte type oxygen sensor in flowing lead bismuth

    International Nuclear Information System (INIS)

    Kondo, Masatoshi; Takahashi, Minoru

    2005-01-01

    A solid electrolyte type oxygen sensor for liquid 45%lead-55%bismuth (Pb-Bi) was developed. The performance of the oxygen sensor in the flowing lead-bismuth (Pb-Bi) was investigated. The initial performance of the sensor was not reliable, since the reference fluid of the oxygen saturated bismuth in the sensor cell was not compact initially. The electromotive force (EMF) obtained from the yttria stabilized zirconia (YSZ) cell was the same as that from the magnesia stabilized zirconia (MSZ) cell in the flowing Pb-Bi. The EMF of the sensor in the flowing Pb-Bi was lower than that in the stagnant Pb-Bi. However, the difference was small. The sensor showed repeatability after the long term interruption and the Pb-Bi drain/charge operation. After the performance tests, the corrosion of the sensor cells were investigated metallurgically. The YSZ cell was eroded around the free surface of the flowing Pb-Bi after 3500 hour-exposure in the flowing Pb-Bi. The MSZ cell showed smooth surface without the erosion. Although the YSZ cell worked more stably than the MSZ cell, the mechanical strength of the YSZ cell is weaker than that of the MSZ cell. (author)

  3. Semiconductor Nanowires: What's Next?

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  4. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Science.gov (United States)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  5. Contact planarization of ensemble nanowires

    Science.gov (United States)

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  6. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  7. Ultrasonic investigations of some bismuth borate glasses doped with ...

    Indian Academy of Sciences (India)

    Keywords. Bismuth borate glasses; elastic moduli; Makishima–Mackenzie model. 1. Introduction ... former because of the small field strength of Bi3+ ion. Bi2O3 ..... Typically, when the material undergoes a phase change, the value of the.

  8. Simulation study of dielectrophoretic assembly of nanowire between electrode pairs

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Quan, E-mail: taq3@pitt.edu; Lan, Fei; Jiang, Minlin [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States); Wei, Fanan [Chinese Academy of Sciences, State Key Laboratory of Robotics, Shenyang Institute of Automation (China); Li, Guangyong, E-mail: gul6@pitt.edu [University of Pittsburgh, The Department of Electrical and Computer Engineering (United States)

    2015-07-15

    Dielectrophoresis (DEP) of rod-shaped nanostructures is attractive because of its exceptional capability to fabricate nanowire-based electronic devices. This efficient manipulation method, however, has a common side effect of assembling a certain number of nanowires at undesired positions. It is therefore essential to understand the underlying physics of DEP of nanowires in order to better guide the assembly. In this work, we propose theoretical methods to characterize the dielectrophoretic force and torque as well as the hydrodynamic drag force and torque on the nanowire (typical length: 10 μm). The trajectory of the nanowire is then simulated based on rigid body dynamics. The nanowire is predicted to either bridge the electrodes or attach on the surface of one electrode. A neighborhood in which the nanowire is more likely to bridge electrodes is found, which is conducive to successful assembly. The simulation study in this work provides us not only a better understanding of the underlying physics but also practical guidance on nanowire assembly by DEP.

  9. Zn-dopant dependent defect evolution in GaN nanowires

    Science.gov (United States)

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-01

    Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (GaN nanowires. At high Zn doping level (3-5 at%), meta

  10. Epitaxy of advanced nanowire quantum devices

    NARCIS (Netherlands)

    Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

    2017-01-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

  11. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  12. Increased biliary excretion of glutathione is generated by the glutathione-dependent hepatobiliary transport of antimony and bismuth.

    Science.gov (United States)

    Gyurasics, A; Koszorús, L; Varga, F; Gregus, Z

    1992-10-06

    We have recently demonstrated that the hepatobiliary transport of arsenic is glutathione-dependent and is associated with a profound increase in biliary excretion of glutathione (GSH), hepatic GSH depletion and diminished GSH conjugation (Gyurasics A, Varga F and Gregus Z, Biochem Pharmacol 41: 937-944 and Gyurasics A, Varga F and Gregus Z, Biochem Pharmacol 42: 465-468, 1991). The present studies in rats aimed to determine whether antimony and bismuth, other metalloids in group Va of the periodic table, also possess similar properties. Antimony potassium tartrate (25-100 mumol/kg, i.v.) and bismuth ammonium citrate (50-200 mumol/kg, i.v.) increased up to 50- and 4-fold, respectively, the biliary excretion of non-protein thiols (NPSH). This resulted mainly from increased hepatobiliary transport of GSH as suggested by a close parallelism in the biliary excretion of NPSH and GSH after antimony or bismuth administration. Within 2 hr, rats excreted into bile 55 and 3% of the dose of antimony (50 mumol/kg, i.v.) and bismuth (150 mumol/kg, i.v.), respectively. The time courses of the biliary excretion of these metalloids and NPSH or GSH were strikingly similar suggesting co-ordinate hepatobiliary transport of the metalloids and GSH. However, at the peak of their excretion, each molecule of antimony or bismuth resulted in a co-transport of approximately three molecules of GSH. Diethyl maleate, indocyanine green and sulfobromophthalein (BSP), which decreased biliary excretion of GSH, significantly diminished excretion of antimony and bismuth into bile indicating that hepatobiliary transport of these metalloids is GSH-dependent. Administration of antimony, but not bismuth, decreased hepatic GSH level by 30% and reduced the GSH conjugation and biliary excretion of BSP. These studies demonstrate that the hepatobiliary transport of trivalent antimony and bismuth is GSH-dependent similarly to the hepatobiliary transport of trivalent arsenic. Proportionally to their biliary

  13. Structural Dynamics and Evolution of Bismuth Electrodes during Electrochemical Reduction of CO 2 in Imidazolium-Based Ionic Liquid Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Medina-Ramos, Jonnathan [Chemical; Lee, Sang Soo [Chemical; Fister, Timothy T. [Chemical; Hubaud, Aude A. [Chemical; Sacci, Robert L.; Mullins, David R.; DiMeglio, John L. [Department; Pupillo, Rachel C. [Department; Velardo, Stephanie M. [Department; Lutterman, Daniel A.; Rosenthal, Joel [Department; Fenter, Paul [Chemical

    2017-09-14

    Real-time changes in the composition and structure of bismuth electrodes used for catalytic conversion of CO2 into CO were examined via X-ray absorption spectroscopy (including XANES and EXAFS), electrochemical quartz crystal microbalance (EQCM), and in situ X-ray reflectivity (XR). Measurements were performed with bismuth electrodes immersed in acetonitrile (MeCN) solutions containing a 1-butyl-3-methylimidazolium ([BMIM]+) ionic liquid promoter or electrochemically inactive tetrabutylammonium supporting electrolytes (TBAPF6 and TBAOTf). Altogether, these measurements show that bismuth electrodes are originally a mixture of bismuth oxides (including Bi2O3) and metallic bismuth (Bi0) and that the reduction of oxidized bismuth species to Bi0 is fully achieved under potentials at which CO2 activation takes place. Furthermore, EQCM measurements conducted during cyclic voltammetry revealed that a bismuth-coated quartz crystal exhibits significant shifts in resistance (ΔR) prior to the onset of CO2 reduction near -1.75 V vs Ag/AgCl and pronounced hysteresis in frequency (Δf) and ΔR, which suggests significant changes in roughness or viscosity at the Bi/[BMIM]+ solution interface. In situ XR performed on rhombohedral Bi (001) oriented films indicates that extensive restructuring of the bismuth film cathodes takes place upon polarization to potentials more negative than -1.6 V vs Ag/AgCl, which is characterized by a decrease of the Bi (001) Bragg peak intensity of ≥50% in [BMIM]OTf solutions in the presence and absence of CO2. Over 90% of the reflectivity is recovered during the anodic half-scan, suggesting that the structural changes are mostly reversible. In contrast, such a phenomenon is not observed for thin Bi (001) oriented films in solutions of tetrabutylammonium salts that do not promote CO2 reduction. Overall, these results highlight that Bi electrodes undergo significant potential-dependent chemical and structural transformations in the presence of [BMIM

  14. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    Directory of Open Access Journals (Sweden)

    Zhiyang Li

    2015-09-01

    Full Text Available In this paper, vertically aligned Pt nanowire arrays (PtNWA with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2 detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2 among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors.

  15. Synthesis and characterization of Au incorporated Alq3 nanowires

    Science.gov (United States)

    Khan, Mohammad Bilal; Ahmad, Sultan; Parwaz, M.; Rahul, Khan, Zishan H.

    2018-05-01

    We report the synthesis and characterization of pure and Au incorporated Alq3 nanowires. These nanowires are synthesized using thermal vapor transport method. The luminescence intensity of Au incorporated Alq3 nanowires are recorded to be higher than that of pure Alq3 nanowires, which is found to increase with the increase in Au concentration. Fluorescence quenching is also observed when Au concentration is increased beyond the certain limit.

  16. Element Distribution in the Oxygen-Rich Side-Blow Bath Smelting of a Low-Grade Bismuth-Lead Concentrate

    Science.gov (United States)

    Yang, Tianzu; Xiao, Hui; Chen, Lin; Chen, Wei; Liu, Weifeng; Zhang, Duchao

    2018-03-01

    Oxygen-rich side-blow bath smelting (OSBS) technology offers an efficient method for processing complex bismuth-lead concentrates; however, the element distributions in the process remain unclear. This work determined the distributions of elements, i.e., bismuth, lead, silver, copper, arsenic and antimony, in an industrial-scale OSBS process. The feed, oxidized slag and final products were collected from the respective sampling points and analyzed. For the oxidative smelting process, 65% of bismuth and 76% of silver in the concentrate report to the metal alloy, whereas less lead reports to the metal ( 31%) than the oxidized slag ( 44%). Approximately 50% of copper enters the matte, while more than 63% of arsenic and antimony report to the slag. For the reductive smelting process, less than 4.5% of bismuth, lead, silver and copper in the oxidized slag enter the reduced slag, indicating high recoveries of these metal values.

  17. Determination of Lung-to-Blood Absorption Rates for Lead and Bismuth which are Appropriate for Radon Progeny

    International Nuclear Information System (INIS)

    Marsh, J.W.; Birchall, A.

    1999-01-01

    The ICRP Publication 66 Human Respiratory Tract Model (HRTM) treats clearance as a competitive process between absorption into blood and particle transport to the gastrointestinal tract and lymphatics. The ICRP recommends default absorption rates for lead and bismuth in ICRP Publication 71 but states that the values are not appropriate for short-lived radon progeny. This paper describes an evaluation of published data from volunteer experiments to estimate the absorption half-times of lead and bismuth that are appropriate for short-lived radon progeny. The absorption half-time for lead was determined to be 10±2 h, based on 212 Pb lung and blood retention data from several studies. The absorption half-time for bismuth was estimated to be about 13 h, based on 212 Bi urinary excretion data from one experiment and the ICRP biokinetic model for bismuth as a decay product of lead. (author)

  18. How reliable are environmental data on 'orphan' elements? The case of bismuth concentrations in surface waters.

    Science.gov (United States)

    Filella, Montserrat

    2010-01-01

    Like all elements of the periodic table, bismuth is ubiquitously distributed throughout the environment as a result of natural processes and human activities. It is present as Bi(III) in environmental, biological and geochemical samples. Although bismuth and its compounds are considered to be non-toxic to humans, its increasing use as a replacement for lead has highlighted how little is known about its environmental and ecotoxicological behaviour. In this first critical review paper on the existing information on bismuth occurrence in natural waters, 125 papers on fresh and marine waters have been collated. Although the initial objective of this study was to establish the range of the typical concentrations of total dissolved bismuth in natural waters, this proved impossible to achieve due to the wide, and hitherto unexplained, dispersion of published data. Since analytical limitations might be one of the reasons underlying value dispersion, new analytical methods published since 2000--intended to be applied to natural waters--have also been reviewed. Disappointingly, the detection limits of the bulk of them are well above those required; they are thus of limited usefulness. Analysis of the existing information on bismuth in secondary references (i.e., books, review chapters) and on its chemical speciation in seawater revealed that the uncritical reproduction of old data is a widespread practice.

  19. MEXICO loop provides essential technology for MYRRHA. SCK•CEN investigates the chemistry of lead-bismuth

    International Nuclear Information System (INIS)

    2014-01-01

    In the MYRRHA facility, Lead-Bismuth Eutectic (LBE) alloy will act as the primary coolant. There are different experimental lead-bismuth loops in the world. Most have been designed to study steel corrosion in LBE or the thermohydraulics of LBE. The article discusses the MEXICO test loop, which has been developed by SCK-CEN to investigate the chemistry of leadbismuth.

  20. Facile synthesis of porous Pt botryoidal nanowires and their electrochemical properties

    International Nuclear Information System (INIS)

    Huang, Zhongyuan; Zhou, Haihui; Chen, Zhongxue; Zeng, Fanyan; Chen, Liang; Luo, Wucheng; Kuang, Yafei

    2014-01-01

    Highlights: • Porous Pt nanowires were synthesized by combination of soft and hard templets. • Te nanowires were used as the hard templet and reductant. • The Pt nanowires are composed of many small Pt nanoparticles and pores. • The Pt nanowires have very good electrochemical activity and stability. - Abstract: Long and porous Pt botryoidal nanowires (Pt BNWs) were facilely synthesized by combination of soft and hard templates accompanying chemical reduction of ascorbic acid and replacement of Te nanowires. This bis-template and bis-reductant method is proved to be an effective way to prepare nanowires with special structure. The scanning electron microscopy and transmission electron microscopy images show the as-prepared product is botryoidal nanowires with diameter of 20–30 nm and length of several micrometers. High resolution transmission electron microscopy shows the Pt botryoidal nanowires are composed of many small Pt nanoparticles (about 3 nm in diameter), which is just like that many grapes grow on the branch. These small nanoparticles make Pt nanowires have botryoidal and porous structure. Moreover, the diameter of Pt BNWs can be adjusted by changing the dosage of Pt precursor, polyvinylpyrrolidone and L-ascorbic acid. The electrocatalytic performance of Pt botryoidal nanowires is studied, which shows that the as-prepared Pt botryoidal nanowires have not only high activity but also good stability for oxygen reduction reaction

  1. The design of the data acquisition system for a very large bismuth germanate calorimeter

    Energy Technology Data Exchange (ETDEWEB)

    Bakken, J.; Isaila, M.; Piroue, P.; Stickland, D.; Sumner, R.

    1984-02-01

    LEPC, the Large Electron Positron Collider being built at CERN, will be ready for experiments in 1988. A large array of bismuth germanate crystals will be part of one of the first experiments to be installed. Particles (including photons) resulting from the collisions will be identified and measured in the surrounding detector. At the center of this composite detector is a tracking device to observe the trajectories of all particles. Beyond this is the bismuth germanate array; it will measure the energy of electrons and photons from a few MeV to 100 GeV. This is surrounded by the hadron calorimeter. The bismuth germanate calorimeter will consist of about 12,000 individual bismuth germanate crystals. Each crystal will have an independent readout system. This system uses silicon photodiodes, each with its own ADC, to measure the scintillation light from each crystal. The ADC is implemented in software in a single chip microcomputer, using a modification of successive approximation, which produces a very wide dynamic range. The microcomputer also provides data buffering and several other housekeeping functions. The initial design of the readout system, presented in this paper, evolved from an attempt to minimize the size requirements and the number of cables needed, and to meet the dynamic range requirement in a practical way.

  2. The design of the data acquisition system for a very large bismuth germanate calorimeter

    International Nuclear Information System (INIS)

    Bakken, J.; Isaila, M.; Piroue, P.; Stickland, D.; Sumner, R.

    1984-01-01

    LEPC, the Large Electron Positron Collider being built at CERN, will be ready for experiments in 1988. A large array of bismuth germanate crystals will be part of one of the first experiments to be installed. Particles (including photons) resulting from the collisions will be identified and measured in the surrounding detector. At the center of this composite detector is a tracking device to observe the trajectories of all particles. Beyond this is the bismuth germanate array; it will measure the energy of electrons and photons from a few MeV to 100 GeV. This is surrounded by the hadron calorimeter. The bismuth germanate calorimeter will consist of about 12,000 individual bismuth germanate crystals. Each crystal will have an independent readout system. This system uses silicon photodiodes, each with its own ADC, to measure the scintillation light from each crystal. The ADC is implemented in software in a single chip microcomputer, using a modification of successive approximation, which produces a very wide dynamic range. The microcomputer also provides data buffering and several other housekeeping functions. The initial design of the readout system, presented in this paper, evolved from an attempt to minimize the size requirements and the number of cables needed, and to meet the dynamic range requirement in a practical way

  3. Quantum-confined nanowires as vehicles for enhanced electrical transport

    International Nuclear Information System (INIS)

    Mohammad, S Noor

    2012-01-01

    Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 2–10 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200 K ≤ T ≤ 500 K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility. (paper)

  4. Electronic transport in narrow-gap semiconductor nanowires

    International Nuclear Information System (INIS)

    Bloemers, Christian

    2012-01-01

    Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

  5. Electronic transport in narrow-gap semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bloemers, Christian

    2012-10-19

    Throughout this work the electronic transport properties of InAs, InN, and GaAs/InAs core/shell nanowires have been analyzed. This includes the analysis of specific resistivity at room temperature and low temperatures as well as the breakdown of resistivity by a contribution of mobility and carrier concentration using gate measurements. While the InN nanowires showed homogeneous transport properties, there was a large statistical spread in the properties of InAs nanowires. Differing crystal structures and the surface conditions are identified to be the main reasons for the statistical spread. Both quantities of influence have been pointed out by comparing the transport parameters before and after a surface treatment (electron irradiation and long time ambient air exposure), and by comparing the transport parameters of wires grown by different growth methods which exhibit different kinds of crystal structure. In particular, the temperature dependence of the conductivity revealed different activation energies in nanowires with differing crystal structures. An explanation has been suggested in terms of stacking fault induced potential barriers. A field-effect measurement setup has been utilized to determine the nanowire mobility and carrier concentration. Even though this method is widely used for nanowires, it is subject to a serious disadvantage concerning the influence of surface and interface states on the measurements. As an alternative method which does not suffer from this drawback, Hall measurements have been successfully performed on InAs nanowires for the first time. These measurements became possible because of the utilization of a new electron beam lithographic procedure with an alignment accuracy in the 5 nm range. Carrier concentration values could be determined and compared to the ones obtained from conventional field-effect measurements. The results of the Hall measurements revealed a methodical overestimation of the carrier concentrations obtained

  6. The Joule heating problem in silver nanowire transparent electrodes

    Science.gov (United States)

    Khaligh, H. H.; Xu, L.; Khosropour, A.; Madeira, A.; Romano, M.; Pradére, C.; Tréguer-Delapierre, M.; Servant, L.; Pope, M. A.; Goldthorpe, I. A.

    2017-10-01

    Silver nanowire transparent electrodes have shown considerable potential to replace conventional transparent conductive materials. However, in this report we show that Joule heating is a unique and serious problem with these electrodes. When conducting current densities encountered in organic solar cells, the average surface temperature of indium tin oxide (ITO) and silver nanowire electrodes, both with sheet resistances of 60 ohms/square, remains below 35 °C. However, in contrast to ITO, the temperature in the nanowire electrode is very non-uniform, with some localized points reaching temperatures above 250 °C. These hotspots accelerate nanowire degradation, leading to electrode failure after 5 days of continuous current flow. We show that graphene, a commonly used passivation layer for these electrodes, slows nanowire degradation and creates a more uniform surface temperature under current flow. However, the graphene does not prevent Joule heating in the nanowires and local points of high temperature ultimately shift the failure mechanism from nanowire degradation to melting of the underlying plastic substrate. In this paper, surface temperature mapping, lifetime testing under current flow, post-mortem analysis, and modelling illuminate the behaviour and failure mechanisms of nanowires under extended current flow and provide guidelines for managing Joule heating.

  7. Solution-processed core-shell nanowires for efficient photovoltaic cells.

    Science.gov (United States)

    Tang, Jinyao; Huo, Ziyang; Brittman, Sarah; Gao, Hanwei; Yang, Peidong

    2011-08-21

    Semiconductor nanowires are promising for photovoltaic applications, but, so far, nanowire-based solar cells have had lower efficiencies than planar cells made from the same materials, even allowing for the generally lower light absorption of nanowires. It is not clear, therefore, if the benefits of the nanowire structure, including better charge collection and transport and the possibility of enhanced absorption through light trapping, can outweigh the reductions in performance caused by recombination at the surface of the nanowires and at p-n junctions. Here, we fabricate core-shell nanowire solar cells with open-circuit voltage and fill factor values superior to those reported for equivalent planar cells, and an energy conversion efficiency of ∼5.4%, which is comparable to that of equivalent planar cells despite low light absorption levels. The device is made using a low-temperature solution-based cation exchange reaction that creates a heteroepitaxial junction between a single-crystalline CdS core and single-crystalline Cu2S shell. We integrate multiple cells on single nanowires in both series and parallel configurations for high output voltages and currents, respectively. The ability to produce efficient nanowire-based solar cells with a solution-based process and Earth-abundant elements could significantly reduce fabrication costs relative to existing high-temperature bulk material approaches.

  8. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  9. The synthesis, structure and reactivity of iron-bismuth complexes : Potential Molecular Precursors for Multiferroic BiFeO3

    OpenAIRE

    Wójcik, Katarzyna

    2009-01-01

    The thesis presented here is focused on the synthesis of iron-bismuth alkoxides and siloxides as precursors for multiferroic BiFeO3 systems. Spectrum of novel cyclopentadienyl substituted iron-bismuth complexes of the general type [{Cpy(CO)2Fe}BiX2], as potential precursors for cyclopentadienyl iron-bismuth alkoxides or siloxides [{Cpy(CO)2Fe}Bi(OR)2] (R-OtBu, OSiMe2tBu), were obtained and characterised. The use of wide range of cyclopentadienyl rings in the iron carbonyl compounds allowed fo...

  10. Effect of bismuth addition to the triple therapy of Helicobacter pylori eradication

    Directory of Open Access Journals (Sweden)

    Ezel Taşdemir

    2012-03-01

    Full Text Available Objective: Success rates of amoxicillin, clarithromycin, and proton-pump inhibitor therapy in the Helicobacter pylori (Hp eradication have been decreasing. The aim of this study was to investigate the impact of bismuth subcitrate addition to triple therapy.Materials and methods: 148 patients diagnosed Hp infection with both histology and Hp stool antigen (HpSA tests were examined retrospectively. The patients were divided into 3 groups according to the eradication therapy. The first group received triple therapy with claritromycine 2x 500 mg, amoxicilline 2x1 g and PPI 2x1 for 14 days (n=40. The second group had bismuth subcitrate 4x120 mg with triple therapy for 14 days (n=73. The third group received 14 days pretreatment with bismuth subcitrate 4x1 together with PPI 2x1 then had triple therapy for 14 days (n=35. (14C urea breath and HpSA tests were used to detect posttreatment H.pylori status.Results: There were no statistical difference between the groups in terms of gender and age (p > 0.05. In group one 12 patients, in group two 20 patients and in group three 10 patients were identified as Hp positive after treatment. Eradication rates were 70% for group one, 72.6% for group two and 71.4% for group three respectively. There was no statistical difference between the groups in terms of eradication rates of treatment (p > 0.05.Conclusions: The addition of bismuth to conventional triple therapy did not affect treatment success rates.

  11. Co-precipitation of plutonium(IV) and americium(III) from nitric acid-oxalic acid solutions with bismuth oxalate

    International Nuclear Information System (INIS)

    Pius, I.C.; Noronha, D.M.; Chaudhury, Satyajeet

    2017-01-01

    Co-precipitation of plutonium and americium from nitric acid-oxalic acid solutions with bismuth oxalate has been investigated for the removal of these long lived α-active nuclides from waste solutions. Effect of concentration of bismuth and oxalic acid on the co-precipitation of Pu(IV) from 3 M HNO_3 has been investigated. Similar experiments were also carried out from 3.75 M HNO_3 on co-precipitation of Am(III) to optimize the conditions of precipitation. Strong co-precipitation of Pu(IV) and Am(III) with bismuth oxalate indicate feasibility of treatment of plutonium and americium bearing waste solutions. (author)

  12. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao

    2016-01-01

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  13. Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

    KAUST Repository

    Shen, Youde

    2016-06-02

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

  14. Study of the bismuth oxide concentration required to provide Portland cement with adequate radiopacity for endodontic use.

    Science.gov (United States)

    Bueno, Carlos Eduardo da Silveira; Zeferino, Eduardo Gregatto; Manhães, Luiz Roberto Coutinho; Rocha, Daniel Guimarães Pedro; Cunha, Rodrigo Sanches; De Martin, Alexandre Sigrist

    2009-01-01

    The purpose of this study was to determine the ideal concentration of bismuth oxide in white Portland cement to provide it with sufficient radiopacity for use as an endodontic material (ADA specification #57). 2-mm thick standardized test specimens of white MTA and of white Portland cement, as controls, and of white Portland cement with the experimental addition of 5%, 10%, 15%, 20%, 25% or 30% of bismuth oxide were radiographed and compared with various thicknesses of pure aluminum, using optic density to determine the observed grayscale levels of radiopacity in a scale ranging from 0 to 255. The data was submitted to ANOVA (pcement with 0%, 5%, 10%, 15%, 20%, 25% and 30% of bismuth oxide presented mean readings of 63.3, 95.7, 110.7, 142.7, 151.3, 161.0 and 180.0 respectively. MTA presented a mean reading of 157.3. The readings of MTA and white Portland cement with 15% bismuth oxide did not differ significantly from the reading observed for a thickness of 4 mm of aluminum (145.3), which is considered ideal for a test specimen by ADA specification #57 (2 mm above the thickness of the test specimen). White MTA and white Portland cement with 15% bismuth oxide presented the radiopacity required for an endodontic cement.

  15. Atomistic simulations of the yielding of gold nanowires

    International Nuclear Information System (INIS)

    Diao Jiankuai; Gall, Ken; Dunn, Martin L.; Zimmerman, Jonathan A.

    2006-01-01

    We performed atomistic simulations to study the effect of free surfaces on the yielding of gold nanowires. Tensile surface stresses on the surfaces of the nanowires cause them to contract along the length with respect to the bulk face-centered cubic lattice and induce compressive stress in the interior. When the cross-sectional area of a nanowire is less than 2.45 nm x 2.45 nm, the wire yields under its surface stresses. Under external forces and surface stresses, nanowires yield via the nucleation and propagation of the {1 1 1} partial dislocations. The magnitudes of the tensile and compressive yield stress of nanowires increase and decrease, respectively, with a decrease of the wire width. The magnitude of the tensile yield stress is much larger than that of the compressive yield stress for small nanowires, while for small nanowires, tensile and compressive yield stresses have similar magnitudes. The critical resolved shear stress (RSS) by external forces depends on wire width, orientation and loading condition (tension vs. compression). However, the critical RSS in the interior of the nanowires, which is exerted by both the external force and the surface-stress-induced compressive stress, does not change significantly with wire width for same orientation and same loading condition, and can thus serve as a 'local' criterion. This local criterion is invoked to explain the observed size dependence of yield behavior and tensile/compressive yield stress asymmetry, considering surface stress effects and different slip systems active in tensile and compressive yielding

  16. Magnetic Nanowires as Materials for Cancer Cell Destruction

    KAUST Repository

    Contreras, Maria F.

    2015-12-01

    Current cancer therapies are highly cytotoxic and their delivery to exclusively the affected site is poorly controlled, resulting in unavoidable and often severe side effects. In an effort to overcome such issues, magnetic nanoparticles have been recently gaining relevance in the areas of biomedical applications and therapeutics, opening pathways to alternative methods. This led to the concept of magnetic particle hyperthermia in which magnetic nano beads are heated by a high power magnetic field. The increase in temperature kills the cancer cells, which are more susceptible to heat in comparison to healthy cells. In this dissertation, the possibility to kill cancer cells with magnetic nanowires is evaluated. The idea is to exploit a magnetomechanical effect, where nanowires cause cancer cell death through vibrating in a low power magnetic field. Specifically, the magnetic nanowires effects to cells in culture and their ability to induce cancer cell death, when combined with an alternating magnetic field, was investigated. Nickel and iron nanowires of 35 nm diameter and 1 to 5 μm long were synthesized by electrodeposition into nanoporous alumina templates, which were prepared using a two-step anodization process on highly pure aluminum substrates. For the cytotoxicity studies, the nanowires were added to cancer cells in culture, varying the incubation time and the concentration. The cell-nanowire interaction was thoroughly studied at the cellular level (mitochondrial metabolic activity, cell membrane integrity and, apoptosis/necrosis assay), and optical level (transmission electron and confocal microscopy). Furthermore, to investigate their therapeutic potential, an alternating magnetic field was applied varying its intensity and frequency. After the magnetic field application, cells health was measured at the mitochondrial activity level. Cytotoxicity results shed light onto the cellular tolerance to the nanowires, which helped in establishing the appropriate

  17. Biotemplated Synthesis of PZT Nanowires

    Science.gov (United States)

    2013-11-25

    electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

  18. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  19. Disposable screen-printed bismuth electrode modified with multi-walled carbon nanotubes for electrochemical stripping measurements.

    Science.gov (United States)

    Niu, Xiangheng; Zhao, Hongli; Lan, Minbo

    2011-01-01

    Integrating the advantages of screen printing technology with the encouraging electroanalytical characteristic of metallic bismuth, we developed an ultrasensitive and disposable screen-printed bismuth electrode (SPBE) modified with multi-walled carbon nanotubes (MWCNTs) for electrochemical stripping measurements. Metallic bismuth powders and MWCNTs were homogeneously mixed with graphite-carbon ink to mass-prepare screen-printed bismuth electrode doped with multi-walled carbon nanotubes (SPBE/MWCNT). The electroanalytical performance of the prepared SPBE/MWCNT was intensively evaluated by measuring trace Hg(II) with square-wave anodic stripping voltammetry (SWASV). The results indicated that the SPBE modified with 2 wt% MWCNTs could offer a more sensitive response to trace Hg(II) than the bare SPBE. The stripping current obtained at SPBE/MWCNT was linear with Hg(II) concentration in the range from 0.2 to 40 µg/L (R(2) = 0.9976), with a detection limit of 0.09 µg/L (S/N = 3) under 180 s accumulation. The proposed "mercury-free" electrode, with extremely simple preparation and ultrahigh sensitivity, holds wide application prospects in both environmental and industrial monitoring. 2011 © The Japan Society for Analytical Chemistry

  20. Perspectives of single cast nanowires technology

    International Nuclear Information System (INIS)

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  1. Influence of bismuth on the age-hardening and corrosion behaviour of low-antimony lead alloys in lead/acid battery systems

    Energy Technology Data Exchange (ETDEWEB)

    Lam, L.T. [CSIRO, Div. of Mineral Products, Port Melbourne, VIC (Australia); Huynh, T.D. [CSIRO, Div. of Mineral Products, Port Melbourne, VIC (Australia); Haigh, N.P. [CSIRO, Div. of Mineral Products, Port Melbourne, VIC (Australia); Douglas, J.D. [CSIRO, Div. of Mineral Products, Port Melbourne, VIC (Australia); Rand, D.A.J. [CSIRO, Div. of Mineral Products, Port Melbourne, VIC (Australia); Lakshmi, C.S. [Pasminco Research Centre, Boolaroo, NSW (Australia); Hollingsworth, P.A. [Pasminco Research Centre, Boolaroo, NSW (Australia); See, J.B. [Pasminco Research Centre, Boolaroo, NSW (Australia); Manders, J. [Pasminco Ltd., Melbourne, VIC (Australia); Rice, D.M. [Pasminco Ltd., Melbourne, VIC (Australia)

    1995-01-01

    The effects of bismuth additions in the range 0.006-0.086 wt.% on the metallurgical and electrochemical properties of Pb-1.5 wt.% Sb alloy are investigated. The self-discharge behaviour of batteries produced with grids of the doped alloys is also evaluated. Addition of bismuth is found to exert no significant effects on the age-hardening behaviour, general microstructure or grain size of the alloy. It does, however, influence the morphology of the eutectic in the inter-dendritic regions. The latter changes from a mainly lamellar to an irregular type with increasing bismuth content. The corrosion rate of the grid decreases with increase of the bismuth content. Attack occurs preferentially in the inter-dendritic regions where there is an enrichment of both antimony and bismuth. Electron-probe microanalysis shows that the corrosion zone consists of a tri-layered structure, namely: a dense, continuous, inner layer (PbO{sub 1.1}); a central layer (PbO{sub 1.8}.PbSO{sub 4}); a porous outer layer n(PbO{sub 1.8}).PbSO{sub 4}, with n=2-8. In the latter, the value of n increases in the direction of corrosive penetration into the grid. Data from atomic absorption spectrometric analysis reveal that bismuth, after oxidative leaching from the grid substrate, is retained mainly in the corrosion layer. A key observation is that bismuth (i.e., up to {approx}0.09 wt.%) does not affect the self-discharge behaviour of batteries. (orig.)

  2. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  3. What is the structure of liquid Bismuth?

    International Nuclear Information System (INIS)

    Caspi, El'ad N; Greenberg, Yaron; Yahel, Eyal; Beuneu, Brigitte; Makov, Guy

    2012-01-01

    The structure of liquid Bismuth is probably the best-studied among elemental liquid metals because of a combination of the interesting physical properties of Bismuth and its excellent neutron scattering properties. Over the last six decades there have been more than 10 independent studies of the structure of liquid Bi, near the melting temperature. This remarkable number of measurements provides an opportunity to compare these results and to analyze the different sources of error contributing to the calculated pair distribution function. In the present contribution we analyze possible sources of error by varying the analysis procedure for a given measurement. By repeating a previous measurement in a new experimental configuration we demonstrate that an invariant (i.e. up to an absolute error) structure factor can be obtained. Transforming the structure factor into the radial distribution introduces new sources of error which causes the scatter to be greater than that required to resolve issues such as the existence of liquid-liquid phase transitions in Bi and to obtain correlation between thermo-physical properties and structure. We consider the contribution of different parameters when transforming the structure factor to the radial distribution function.

  4. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  5. Increasing the efficiency of polymer solar cells by silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07743 Jena (Germany); Sensfuss, S, E-mail: bjoern.eisenhawer@ipht-jena.de [Thuringian Institute for Textile and Plastics Research, Breitscheidstrasse 97, 07407 Rudolstadt (Germany)

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  6. Increasing the efficiency of polymer solar cells by silicon nanowires

    International Nuclear Information System (INIS)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F; Sensfuss, S

    2011-01-01

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  7. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  8. High Photon-to-Current Conversion in Solar Cells Based on Light-Absorbing Silver Bismuth Iodide.

    Science.gov (United States)

    Zhu, Huimin; Pan, Mingao; Johansson, Malin B; Johansson, Erik M J

    2017-06-22

    Here, a lead-free silver bismuth iodide (AgI/BiI 3 ) with a crystal structure with space group R3‾ m is investigated for use in solar cells. Devices based on the silver bismuth iodide deposited from solution on top of TiO 2 and the conducting polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole-transport layer are prepared and the photovoltaic performance is very promising with a power conversion efficiency over 2 %, which is higher than the performance of previously reported bismuth-halide materials for solar cells. Photocurrent generation is observed between 350 and 700 nm, and the maximum external quantum efficiency is around 45 %. The results are compared to solar cells based on the previously reported material AgBi 2 I 7 , and we observe a clearly higher performance for the devices with the new silver and bismuth iodides composition and different crystal structure. The X-ray diffraction spectrum of the most efficient silver bismuth iodide material shows a hexagonal crystal structure with space group R3‾ m, and from the light absorption spectrum we obtain an indirect band gap energy of 1.62 eV and a direct band gap energy of 1.85 eV. This report shows the possibility for finding new structures of metal-halides efficient in solar cells and points out new directions for further exploration of lead-free metal-halide solar cells. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  9. Oxygen deficiency in MoO{sub 3} polycrystalline nanowires and nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Varlec, Ana, E-mail: ana.varlec@ijs.si [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Arčon, Denis [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Faculty of Mathematics and Physics, University of Ljubljana, Jadranska cesta 19, SI-1000 Ljubljana (Slovenia); Škapin, Srečo D. [Advanced Materials Department, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia); Remškar, Maja [Condensed Matter Physics, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana (Slovenia)

    2016-02-15

    We report on the synthesis of polycrystalline molybdenum oxide (MoO{sub 3}) nanowires via oxidation of molybdenum-sulfur-iodine (Mo{sub 6}S{sub 2}I{sub 8}) nanowires. This unique synthesis route results in an interesting morphology comprising porous nanowires and nanotubes. We found the nanowires to have the orthorhombic MoO{sub 3} structure. The structure is slightly oxygen deficient which results in the appearance of a new resonant Raman band (1004 cm{sup −1}) and paramagnetic defects (Mo{sup 5+}) of both the point and crystallographic shear plane nature. - Highlights: • Polycrystalline MoO{sub 3} nanowires were obtained via oxidation of Mo{sub 6}S{sub 2}I{sub 8} nanowires. • Nanowires are porous and tubular with either filled or empty interior. • Nanowires are slightly oxygen deficient which leads to a new Raman band.

  10. Influence of bismuth shielding use in the dose CT and the imaging quality in standard brain protocol

    International Nuclear Information System (INIS)

    Sanchez Carnoma, G.; Urena Llinares, A.; Santos Rubio, A.; Haro Madero, G.; Herrador Cordoba, M.

    2006-01-01

    The purpose of this work is to evaluate the reduction of lens doses, CT dose index (CTDI) and image quality when bismuth shielding is used. Dose indexes nCDTIs,p, w were measured for a head phantom (d=16 cm) in three situations: first, without shielding, second, shielded with bismuth over the phantom surface and, last, with 2 cm between both. Four regions of interest were selected, two including the theoretical eyes position and the others 4-6 cm below them. Noise and grey level in Housfield units were also measured in all geometries. A bismuth shielding in contact or 2 cm above surface provides a dose reduction of 36% y 29% respectively. In the first case an importation of image quality appears, increasing a 55% the Housfield units in the superficial regions of interest and a growth of noise 6 times greater. Bismuth protection provides an important reduction in lens dose., in the case of dire ct incidence radiation beam. (Author)

  11. Novel Flame-Based Synthesis of Nanowires for Multifunctional Application

    Science.gov (United States)

    2015-05-13

    pattern (SAED) of SnO2/WO2.9 heterojunction for case 7. TEM (Fig. 14(a)) reveals that the coating on the tungsten- oxide nanowires is actually a...tungsten oxide nanowire,s resulting in radial growth of Zn2SnO4 nanocube/WO2.9 nanowire heterojunction . Furthermore, the combined flame and solution...SECURITY CLASSIFICATION OF: Progress for the project has been made in various areas. Specifically, we report on: (i) flame synthesis of metal- oxide

  12. Ac irreversibility line of bismuth-based high temperature superconductors

    International Nuclear Information System (INIS)

    Mehdaoui, A.; Beille, J.; Berling, D.; Loegel, B.; Noudem, J.G.; Tournier, R.

    1997-01-01

    We discuss the magnetic properties of lead doped Bi-2223 bulk samples obtained through combined magnetic melt texturing and hot pressing (MMTHP). The ac complex susceptibility measurements are achieved over a broad ac field range (1 Oe ac <100 Oe) and show highly anisotropic properties. The intergranular coupling is improved in the direction perpendicular to the applied stress and magnetic field direction, and an intragranular loss peak is observed for the first time. A comparison is made with other bismuth-based compounds and it is shown that the MMTHP process shifts the ac irreversibility line (ac IL) toward higher fields. It is also shown that all the ac IL close-quote s for quasi 2D bismuth-based compounds show a nearly quadratic temperature dependence and deviate therefore strongly from the linear behavior observed in quasi 3D compounds and expected from a critical state model.copyright 1997 Materials Research Society

  13. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  14. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  15. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    Science.gov (United States)

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  16. Adaptive statistical iterative reconstruction and bismuth shielding for evaluation of dose reduction to the eye and image quality during head CT

    Science.gov (United States)

    Kim, Myeong Seong; Choi, Jiwon; Kim, Sun Young; Kweon, Dae Cheol

    2014-03-01

    There is a concern regarding the adverse effects of increasing radiation doses due to repeated computed tomography (CT) scans, especially in radiosensitive organs and portions thereof, such as the lenses of the eyes. Bismuth shielding with an adaptive statistical iterative reconstruction (ASIR) algorithm was recently introduced in our clinic as a method to reduce the absorbed radiation dose. This technique was applied to the lens of the eye during CT scans. The purpose of this study was to evaluate the reduction in the absorbed radiation dose and to determine the noise level when using bismuth shielding and the ASIR algorithm with the GE DC 750 HD 64-channel CT scanner for CT of the head of a humanoid phantom. With the use of bismuth shielding, the noise level was higher in the beam-hardening artifact areas than in the revealed artifact areas. However, with the use of ASIR, the noise level was lower than that with the use of bismuth alone; it was also lower in the artifact areas. The reduction in the radiation dose with the use of bismuth was greatest at the surface of the phantom to a limited depth. In conclusion, it is possible to reduce the radiation level and slightly decrease the bismuth-induced noise level by using a combination of ASIR as an algorithm process and bismuth as an in-plane hardware-type shielding method.

  17. Adaptive statistical iterative reconstruction and bismuth shielding for evaluation of dose reduction to the eye and image quality during head CT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Myeong Seong [The Korean National Cancer Center, Goyang (Korea, Republic of); Seoul National University, Seoul (Korea, Republic of); Choi, Ji Won [Jeonju University, Jeonju (Korea, Republic of); Kim, Sun Young [Hallym University of Graduate Studies, Seoul (Korea, Republic of); The Korean National Cancer Center, Goyang (Korea, Republic of); Kweon, Dae Cheol [Shinhan University, Uijeongbu (Korea, Republic of)

    2014-03-15

    There is a concern regarding the adverse effects of increasing radiation doses due to repeated computed tomography (CT) scans, especially in radiosensitive organs and portions thereof, such as the lenses of the eyes. Bismuth shielding with an adaptive statistical iterative reconstruction (ASIR) algorithm was recently introduced in our clinic as a method to reduce the absorbed radiation dose. This technique was applied to the lens of the eye during CT scans. The purpose of this study was to evaluate the reduction in the absorbed radiation dose and to determine the noise level when using bismuth shielding and the ASIR algorithm with the GE DC 750 HD 64-channel CT scanner for CT of the head of a humanoid phantom. With the use of bismuth shielding, the noise level was higher in the beam-hardening artifact areas than in the revealed artifact areas. However, with the use of ASIR, the noise level was lower than that with the use of bismuth alone; it was also lower in the artifact areas. The reduction in the radiation dose with the use of bismuth was greatest at the surface of the phantom to a limited depth. In conclusion, it is possible to reduce the radiation level and slightly decrease the bismuth-induced noise level by using a combination of ASIR as an algorithm process and bismuth as an in-plane hardware-type shielding method.

  18. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2015-01-25

    Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

  19. Interlayer interactions in absorption and reflection spectra of bismuth HTSC crystals

    International Nuclear Information System (INIS)

    Kruchinin, S.P.; Yaremko, A.M.

    1992-01-01

    The HTSC reflection and absorption optic spectra peculiarities are analysed in the paper on the basis of bismuth and thallium. The approach suggested takes into account the complex character of crystals structure, possible localization of excitations in the isolated layers and further excitations exchange due to the interlayer interaction between cuprate (Cu O) and quasi-degenerate bismuth layers (Bi O/3pO). The expressions for the excitation and intensity energies of the corresponding transitions are obtained. It is shown that only part of excitations whose number is determined by the number of layers in the unit cell will be manifest in optical reflection and absorption spectra. The experimental results on spectral dependence of crystal reflection coefficients are analysed

  20. High mobility ZnO nanowires for terahertz detection applications

    International Nuclear Information System (INIS)

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  1. Radioprotection to the Gonads in Pediatric Pelvic Radiography: Effectiveness of Developed Bismuth Shield

    Directory of Open Access Journals (Sweden)

    Vahid Karami

    2017-06-01

    Full Text Available Background: The use and effectiveness of traditional lead gonad shields in pediatric pelvic radiography has been challenged by several literatures over the past two decades. The aim of this study was to develop a new radioprotective gonad shields to be use in pediatric pelvic radiography. Materials and Methods: The commercially available 0.06 mm lead equivalent bismuth garment has cropped squarely and used as ovarian shield to cover the entire region of pelvis. In order to prevent deterioration of image quality due to beam hardening artifacts, a 1-cm foam as spacer was located between the shield and patients pelvis. Moreover, we added a lead piece at the cranial position of the bismuth garment to absorb the scatter radiations to the radiosensitive organs. In girls, 49 radiographs with shield and 46 radiographs without shield was taken. The radiation dose was measured using thermoluminescent dosimeters (TLDs. Image quality assessments were performed using the European guidelines. For boys, the lead testicular shields was developed using 2 cm bismuth garment, added to the sides. The prevalence and efficacy of testicular shields was assessed in clinical practice fromFebruary 2016 to June 2016. Results: Without increasing the dose to the breast, thyroid and the lens of the eyes, the use of bismuth shield has reduced the entrance skin dose(ESD of the pelvis and radiation dose to the ovaries by 62.2% and 61.7%, respectively (P

  2. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    International Nuclear Information System (INIS)

    Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

    2015-01-01

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm 2 ). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals

  3. The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Dahuai; Yao, Jiaying [School of Physics, Nankai University, Tianjin 300071 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Kong, Yongfa, E-mail: kongyf@nankai.edu.cn [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); R and D Center, Taishan Sports Industry Group, Leling 253600 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Liu, Shiguo [School of Physics, Nankai University, Tianjin 300071 (China); Zhang, Ling; Chen, Shaolin [MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Xu, Jingjun [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

    2015-01-15

    Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

  4. Oriented epitaxial TiO2 nanowires for water splitting

    Science.gov (United States)

    Hou, Wenting; Cortez, Pablo; Wuhrer, Richard; Macartney, Sam; Bozhilov, Krassimir N.; Liu, Rong; Sheppard, Leigh R.; Kisailus, David

    2017-06-01

    Highly oriented epitaxial rutile titanium dioxide (TiO2) nanowire arrays have been hydrothermally grown on polycrystalline TiO2 templates with their orientation dependent on the underlying TiO2 grain. Both the diameter and areal density of the nanowires were tuned by controlling the precursor concentration, and the template surface energy and roughness. Nanowire tip sharpness was influenced by precursor solubility and diffusivity. A new secondary ion mass spectrometer technique has been developed to install additional nucleation sites in single crystal TiO2 templates and the effect on nanowire growth was probed. Using the acquired TiO2 nanowire synthesis knowhow, an assortment of nanowire arrays were installed upon the surface of undoped TiO2 photo-electrodes and assessed for their photo-electrochemical water splitting performance. The key result obtained was that the presence of short and dispersed nanowire arrays significantly improved the photocurrent when the illumination intensity was increased from 100 to 200 mW cm-2. This is attributed to the alignment of the homoepitaxially grown nanowires to the [001] direction, which provides the fastest charge transport in TiO2 and an improved pathway for photo-holes to find water molecules and undertake oxidation. This result lays a foundation for achieving efficient water splitting under conditions of concentrated solar illumination.

  5. Single cell detection using a magnetic zigzag nanowire biosensor.

    Science.gov (United States)

    Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

    2013-08-07

    A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

  6. Study of point defects in bismuth

    International Nuclear Information System (INIS)

    Bois, P.

    1987-03-01

    Single crystalline samples of bismuth, pure and n or p - doped by adding tellurium or tin, were electron irradiated at low temperature (4.2 K and 20 K). In the energy range 0.7 - 2.5 MeV, a displacement threshold energy of 13 eV and an athermal recombination volume of 150 atomic volumes were determined. Joint measurements of resistivity, magnetotransport and positron annihilation enabled to precised the nature of the annealing stages: 40-50 K, free migration of interstitials; 90-120 K long range migration of vacancy. Point defects have according to their nature a different effect on the electronic properties of bismuth: isolated Frenkel pairs are globally donnors with a charge of + 0.16 e- and the vacancy is donnor, which seems to attribute to it a negative formation volume. A simple model with non-deformating bands is no longer sufficient to explain the behaviour under irradiation: one has to take into account an acceptor level with a charge of - 0,27 e-, linked to the cascade-type defects and resonating with the valence band. It's position in the band overlap and it's width (8 meV) could be precised. In first approximation this coupling with less mobile carriers does not affect the simple additive rule which exists for relaxation times. Some yet obscure magnetic properties seem to be linked to this defect level [fr

  7. Assessment of a Thermoelectric Vest through Physical and Mental Performance

    Science.gov (United States)

    2012-04-01

    system is a sandwich- type structure of doped bismuth telluride (Bi2Te3) soldered between two ceramic plates. Bi2Te3 acts as a semiconductor and after... doping , the material becomes an efficient TE. Variations in doping create P-N junctions throughout the TE. Figure 3 shows a schematic of a TE...Excalibur Sport Ergonometer was used to increase subject’s core body temperature. The Excalibur Sport is a multi-adjustable ergonometer and is

  8. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  9. [Protective effect of compound bismuth and magnesium granules on aspirin-induced gastric mucosal injury in rats].

    Science.gov (United States)

    Mu, F H; Hu, F L; Wei, H; Zhang, Y Y; Yang, G B; Lei, X Y; Yang, Y P; Sun, W N; Cui, M H

    2016-02-01

    To investigate the protective effect of compound bismuth and magnesium granules on aspirin-induced gastric mucosal injury in rats and its possible mechanism. Acute gastric mucosal injury model was developed with intraperitoneal injection of aspirin in Wistar rats. The rats were divided into normal control group, injury group, sucralfate protection group, compound bismuth and magnesium granules protection group and its herbal components protection group(each group 12 rats). In the protection groups, drugs as mentioned above were administered by gavage before treated with intraperitoneal injection of aspirin. To evaluate the extent of gastric mucosal injury and the protective effect of drugs, gastric mucosal lesion index, gastric mucosal blood flow, content of gastric mucosal hexosamine, prostaglandins (PG), nitric oxide(NO), tumor necrosis factor (TNF), and interleukin (IL) -1, 2, 8 were measured in each group, and histological changes were observed by gross as well as under microscope and electron microscope. Contents of hexosamine, NO, and PG in all the protection groups were significantly higher than those in the injury group (all Pcompound bismuth and magnesium granules group was significantly higher than that in the sucralfate group ((11.29±0.51) vs(10.80±0.36)nmol/ml, Pcompound bismuth and magnesium granules group were significantly lower than those in the sucralfate group ((328.17±6.56) vs(340.23±8.05)pg/ml, PCompound bismuth and magnesium granules and its herbal components may have significant protective effect on aspirin-induced gastric mucosal injury.

  10. Optical properties of nanowire metamaterials with gain

    DEFF Research Database (Denmark)

    Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

    2016-01-01

    The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

  11. Shear-driven phase transformation in silicon nanowires.

    Science.gov (United States)

    Vincent, L; Djomani, D; Fakfakh, M; Renard, C; Belier, B; Bouchier, D; Patriarche, G

    2018-03-23

    We report on an unprecedented formation of allotrope heterostructured Si nanowires by plastic deformation based on applied radial compressive stresses inside a surrounding matrix. Si nanowires with a standard diamond structure (3C) undergo a phase transformation toward the hexagonal 2H-allotrope. The transformation is thermally activated above 500 °C and is clearly driven by a shear-stress relief occurring in parallel shear bands lying on {115} planes. We have studied the influence of temperature and axial orientation of nanowires. The observations are consistent with a martensitic phase transformation, but the finding leads to clear evidence of a different mechanism of deformation-induced phase transformation in Si nanowires with respect to their bulk counterpart. Our process provides a route to study shear-driven phase transformation at the nanoscale in Si.

  12. Fabrication and morphology of uniaxially aligned perylenediimide nanowires

    Science.gov (United States)

    Machida, Shinjiro; Tanikatsu, Makoto; Itaya, Akira; Ikeda, Noriaki

    2017-06-01

    Uniaxial alignment of crystalline nanowires consisting of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) was achieved on poly(tetrafluoroethylene) (PTFE) layers prepared by friction transfer method on a glass substrate. The nanowires were formed by spin-coating a trifluoroacetic acid (TFA) solution of PTCDI-C8 on the PTFE layers and were further grown under TFA vapor atmosphere. The morphology of the PTCDI-C8 nanowires were characterized using atomic force microscope (AFM) and fluorescence optical microscope with changing the dye concentration in the spin coating solution, annealing time in the TFA vapor, and substrate materials. The nanowires prepared on the PTFE layer on a silica-coated silicon or a mica substrate did not grow so well as those on the glass substrate. This result suggests that the surface roughness would affect the PTFE layer and the growth of the PTCDI nanowires.

  13. Direct electrodeposition of metal nanowires on electrode surface

    International Nuclear Information System (INIS)

    Gambirasi, Arianna; Cattarin, Sandro; Musiani, Marco; Vazquez-Gomez, Lourdes; Verlato, Enrico

    2011-01-01

    A method for decorating the surface of disk electrodes with metal nanowires is presented. Cu and Ni nanowires with diameters from 1.0 μm to 0.2 μm are directly deposited on the electrode surface using a polycarbonate membrane filter template maintained in contact with the metal substrate by the soft homogeneous pressure of a sponge soaked with electrolyte. The morphologic and structural properties of the deposit are characterized by scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD). The latter shows that the head of nanowires with diameter of 0.4 μm is ordinarily polycrystalline, and that of nanowires with diameter of 0.2 μm is almost always monocrystalline for Cu and frequently also for Ni. Cyclic voltammetries and impedance investigations recorded in alkaline solutions at representative Ni electrodes decorated with nanowires provide consistent values of roughness factor, in the range 20-25.

  14. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  15. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  16. Growth of Ag-seeded III-V Nanowires and TEM Characterization

    DEFF Research Database (Denmark)

    Lindberg, Anna Helmi Caroline

    appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

  17. Synthesis of the cactus-like silicon nanowires/tungsten oxide nanowires composite for room-temperature NO{sub 2} gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Weiyi, E-mail: zhangweiyi@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Hu, Ming [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Liu, Xing; Wei, Yulong; Li, Na [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Qin, Yuxiang, E-mail: qinyuxiang@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (China); Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2016-09-15

    In the present work, the tungsten oxide (WO{sub 3}) nanowires functionalized silicon nanowires (SiNWs) with cactus-like structure has been successfully synthesized for room-temperature NO{sub 2} detection. The novel nanocomposite was fabricated by metal-assisted chemical etching (MACE) and thermal annealing of tungsten film. The WO{sub 3} nanowires were evenly distributed from the upper to the lower part of the SiNWs, indicating excellent uniformity which is conducive to adsorption and desorption of gas molecules. The gas-sensing properties have been examined by measuring the resistance change towards 0.25–5 ppm NO{sub 2} gas. At room temperature, which is the optimum working temperature, the SiNWs/WO{sub 3} nanowires composite showed two-times higher NO{sub 2} response than that of the bare SiNWs at 2 ppm NO{sub 2}. On the contrary, the responses of composite sensors to high concentrations of other reducing gases were very low, indicating excellent selectivity. Simultaneously, the composite sensors exhibited good sensing repeatability and stability. The enhancement in gas sensing properties may be attributed to the change in width of the space charge region, which is similar to the behavior of p-n junctions under forward bias, in the high-density p-n heterojunction structure formed between SiNWs and WO{sub 3} nanowires. - Highlights: • SiNWs/WO{sub 3} nanowires composite with cactus-like structure is synthesized. • The morphology of WO{sub 3} nanowires depends on the thermal annealing temperature. • The nanocomposite sensor exhibit better gas response than that of bare SiNWs. • The gas sensing mechanism is discussed using p-n heterojunction theory.

  18. Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template

    Directory of Open Access Journals (Sweden)

    Nazila Dadvand

    2007-01-01

    Full Text Available A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

  19. Well-dispersed gold nanowire suspension for assembly application

    International Nuclear Information System (INIS)

    Xu Cailing; Zhang Li; Zhang Haoli; Li Hulin

    2005-01-01

    A method for fabricating well-dispersed nanowire suspension has been demonstrated in the paper. Thin gold nanowires were prepared by template synthesis, and then functionalized with sulphonate group-terminated thiols before suspended in different solvents. The degree of aggregation of the obtained suspension was evaluated with transmission electron microscopy (TEM) and UV-vis spectroscopy. It was found that the degree of aggregation was predominated by the solvents, and the best degree of dispersion was obtained when isopropyl alcohol (IPA) was used as the solvent. The gold nanowires from the suspension can be selectively assembled onto chemically patterned substrates. This well-dispersed nanowire suspension is potentially useful for fabricating novel nanodevices

  20. Controlling nanowire emission profile using conical taper

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2008-01-01

    The influence of a conical taper on nanowire light emission is studied. For nanowires with divergent output beams, the introduction of tapers improves the emission profile and increase the collection efficiency of the detection optics....