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Sample records for bismuth telluride nanowires

  1. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  2. Growth and characterization of bismuth telluride nanowires

    International Nuclear Information System (INIS)

    Picht, Oliver

    2010-01-01

    Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  3. Doping of germanium telluride with bismuth tellurides

    International Nuclear Information System (INIS)

    Abrikosov, N.Kh.; Karpinskij, O.G.; Makalatiya, T.Sh.; Shelimova, L.E.

    1981-01-01

    Effect of germanium telluride doping with bismuth fellurides (Bi 2 Te 3 ; BiTe; Bi 2 Te) on phase transition temperature, lattice parameters and electrophysical properties of alloys is studied. It is shown that in alloys of GeTe-Bi 2 Te 3 (BiTe)(Bi 2 Te) cross sections solid solution of GeTe with Bi 2 Te 3 , characterized by deviation from stoichiometry, and germanium in the second phase the quantity of which increases during the transition from GeTe-Bi 2 Te 3 cross section to GeTe-Bi 2 Te are in equilibrium. Lower values of holes concentration and of electric conductivity and higher values of thermo e.m.f. coefficient in comparison with alloys of GeTe-Bi 2 Te 3 cross section with the same bismuth content are characterized for GeTe-Bi 2 Te cross section alloys. It is shown that in the range of GeTe-base solid solution the α→γ phase transformation which runs trough the two-phase region (α→γ) is observed with tellurium content increase. Extension of α-phase existence region widens with the bismuth content increase. Peculiarities of interatomic interaction in GeTe-base solid solutions with isovalent and heterovalent cation substitution are considered [ru

  4. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  5. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  6. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    Science.gov (United States)

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  7. About thermo-electric properties of bismuth telluride doped by gadolinium

    International Nuclear Information System (INIS)

    Akperov, M.M.; Ismailov, Sh.S.; Shukyurova, A.A.

    2004-01-01

    Results of study of the Gd impurities effect on the bismuth telluride thermo-electric properties are presented. The experiment was carried out within the temperature range T=300-700 K. It is determined, that at temperature increase the energy level is appreciably closing up to bismuth telluride forbidden zone which makes up 0.16-0.24 eV. Such anomalous energy properties of gadolinium in telluride affect on material thermoelectric properties

  8. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  9. Magneto-photoconductivity of three dimensional topological insulator bismuth telluride

    Science.gov (United States)

    Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

    2018-03-01

    Magnetic field dependence of the photocurrent in a 3D topological insulator is studied. Among the 3D topological insulators bismuth telluride has unique hexagonal warping and spin texture which has been studied by photoemission, scanning tunnelling microscopy and transport. Here, we report on low temperature magneto-photoconductivity, up to 7 T, of two metallic bismuth telluride topological insulator samples with 68 and 110 nm thicknesses excited by 2.33 eV photon energy along the magnetic field perpendicular to the sample plane. At 4 K, both samples exhibit negative magneto-photoconductance below 4 T, which is as a result of weak-antilocalization of Dirac fermions similar to the previous observations in electrical transport. However the thinner sample shows positive magneto-photoconductance above 4 T. This can be attributed to the coupling of surface states. On the other hand, the thicker sample shows no positive magneto-photoconductance up to 7 T since there is only one surface state at play. By fitting the magneto-photoconductivity data of the thicker sample to the localization formula, we obtain weak antilocalization behaviour at 4, 10, and 20 K, as expected; however, weak localization behaviour at 30 K, which is a sign of surface states masked by bulk states. Also, from the temperature dependence of phase coherence length bulk carrier-carrier interaction is identified separately from the surface states. Therefore, it is possible to distinguish surface states by magneto-photoconductivity at low temperature, even in metallic samples.

  10. Theoretical study of bismuth-doped cadmium telluride

    Science.gov (United States)

    Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

    Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

  11. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    Science.gov (United States)

    Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-12-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

  12. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    International Nuclear Information System (INIS)

    Ganguly, Shreyashi; Zhou Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-01-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2−x Sb x Te 3 ) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2−x Sb x Te 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties. - Graphical abstract: PbTe nanoparticles introduced into p-type Bi 2 Te 3 by incipient wetness results in decreased lattice thermal conductivity, but also acts as an electronic dopant, resulting in an overall decrease in thermoelectric performance. Highlights: ► Composites of PbTe nanoparticles in Bi 2−x Sb x Te 3 were formed by incipient wetness. ► PbTe nanoparticles leads to decreased κ l , consistent with phonon scattering. ► PbTe nanoparticles lead to decreased S and ρ, due to increased carriers. ► Collateral doping from PbTe leads to decreased ZT with increasing concentration. ► Immiscible systems are preferred for improved ZT.

  13. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey; Peterson, Rebecca Lorenz; Hussain, Muhammad Mustafa; Najafi, Khalil

    2013-01-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning

  14. Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

    International Nuclear Information System (INIS)

    Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

    1994-01-01

    Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

  15. Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

    Science.gov (United States)

    Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

    2014-10-01

    Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

  16. Feasibility of preparing patterned molybdenum coatings on bismuth telluride thermoelectric modules.

    Energy Technology Data Exchange (ETDEWEB)

    Sarobol, Pylin; Hall, Aaron Christopher; Miller, Stephen Samuel; Knight, Marlene E.; LePage, William S.; Sobczak, Catherine Elizabeth.; Wesolowski, Daniel Edward

    2013-09-01

    Molybdenum electrical interconnects for thermoelectric modules were produced by air plasma spraying a 30%CE%BCm size molybdenum powder through a laser-cut Kapton tape mask. Initial feasibility demonstrations showed that the molybdenum coating exhibited excellent feature and spacing retention (~170%CE%BCm), adhered to bismuth-telluride, and exhibited electrical conductivity appropriate for use as a thermoelectric module interconnect. A design of experiments approach was used to optimize air plasma spray process conditions to produce a molybdenum coating with low electrical resistivity. Finally, a molybdenum coating was successfully produced on a fullscale thermoelectric module. After the addition of a final titanium/gold layer deposited on top of the molybdenum coating, the full scale module exhibited an electrical resistivity of 128%CE%A9, approaching the theoretical resistivity value for the 6mm module leg of 112%CE%A9. Importantly, air plasma sprayed molybdenum did not show significant chemical reaction with bismuth-telluride substrate at the coating/substrate interface. The molybdenum coating microstructure consisted of lamellar splats containing columnar grains. Air plasma sprayed molybdenum embedded deeply (several microns) into the bismuth-telluride substrate, leading to good adhesion between the coating and the substrate. Clusters of round pores (and cracks radiating from the pores) were found immediately beneath the molybdenum coating. These pores are believed to result from tellurium vaporization during the spray process where the molten molybdenum droplets (2623%C2%B0C) transferred their heat of solidification to the substrate at the moment of impact. Substrate cooling during the molybdenum deposition process was recommended to mitigate tellurium vaporization in future studies.

  17. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

    International Nuclear Information System (INIS)

    Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

    2016-01-01

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  18. Strain effect on the heat transport properties of bismuth telluride nanofilms with a hole

    Science.gov (United States)

    Fang, Te-Hua; Chang, Win-Jin; Wang, Kuan-Yu; Huang, Chao-Chun

    2018-06-01

    We investigated the mechanical behavior of bismuth telluride nanofilms with holes by using an equilibrium molecular dynamics (MD) approach. The holes had diameters of 20, 30, 40, and 50 Å. The thermal conductivity values of the nanofilms were calculated under different strains at different temperatures using a nonequilibrium MD simulation. The simulation revealed that the thermal conductivity of a bismuth telluride nanofilm with a hole decreases with an increase in hole diameter at different strains. For a film with a perfect structure at 300 K, a 48% reduction (from 0.33 to 0.17 W/m K) in the thermal conductivity was observed at a 7% tensile strain. In addition, the thermal conductivity increased by approximately 39% (from 0.33 to 0.46 W/m K) at a 7% compressive strain. A very low value (0.11 W/m K) of thermal conductivity is obtained for the nanofilm with a hole diameter of 50 Å at a 7% tensile strain at 300 K.

  19. Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

    Science.gov (United States)

    Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

    2018-04-01

    The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

  20. An additive approach to low temperature zero pressure sintering of bismuth antimony telluride thermoelectric materials

    Science.gov (United States)

    Catlin, Glenn C.; Tripathi, Rajesh; Nunes, Geoffrey; Lynch, Philip B.; Jones, Howard D.; Schmitt, Devin C.

    2017-03-01

    This paper presents an additive-based approach to the formulation of thermoelectric materials suitable for screen printing. Such printing processes are a likely route to such thermoelectric applications as micro-generators for wireless sensor networks and medical devices, but require the development of materials that can be sintered at ambient pressure and low temperatures. Using a rapid screening process, we identify the eutectic combination of antimony and tellurium as an additive for bismuth-antimony-telluride that enables good thermoelectric performance without a high pressure step. An optimized composite of 15 weight percent Sb7.5Te92.5 in Bi0.5Sb1.5Te3 is scaled up and formulated into a screen-printable paste. Samples fabricated from this paste achieve a thermoelectric figure of merit (ZT) of 0.74 using a maximum processing temperature of 748 K and a total thermal processing budget of 12 K-hours.

  1. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    KAUST Repository

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  2. Structure impact on the thermal and electronic properties of bismuth telluride by ab-initio and molecular dynamics calculations

    International Nuclear Information System (INIS)

    Termentzidis, K; Pokropivny, A; Xiong, S-Y; Chumakov, Y; Volz, S; Woda, M; Cortona, P

    2012-01-01

    We use molecular dynamics and ab-initio methods to predict the thermal and electronic properties of new materials with high figures of merit. The simulated systems are bulk bismuth tellurides with antisite and vacancy defects. Optimizations of the materials under investigation are performed by the SIESTA code for subsequent calculations of force constants, electronic properties, and Seebeck coefficients. The prediction of the thermal conductivity is made by Non-Equilibrium Molecular Dynamics (NEMD) using the LAMMPS code. The thermal conductivity of bulk bismuth telluride with different stoichiometry and with a number of substitution defects is calculated. We have found that the thermal conductivity can be decreased by 60% by introducing vacancy defects. The calculated thermal conductivities for the different structures are compared with the available experimental and theoretical results.

  3. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    International Nuclear Information System (INIS)

    Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

    2016-01-01

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  4. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    International Nuclear Information System (INIS)

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

    2014-01-01

    Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  5. Effect of reducing agent strength on the growth and thermoelectric performance of nanocrystalline bismuth telluride

    Science.gov (United States)

    Nour, Asmaa; Hassan, Nazly; Refaat, Heba M.; Soliman, Hesham M. A.; El-Dissouky, A.

    2018-03-01

    A novel combination of Trizma, as an environmentally friendly chelating agent, with either weak or strong reducing agent was used to produce n-type bismuth telluride (Bi2Te3) nanocrystals via water-based chemical route. The synthesized powders were consolidated into pellets utilizing spark plasma sintering (SPS). The sintered n-type pellets exhibited potentially high electrical conductivities (5.29 × 105 and 5.23 × 105 S.m‑1) and low lattice thermal conductivities (0.12 and 0.25 Wm‑1K‑1) respectively. These thermoelectric (TE) properties suggested that the partially coherent boundaries permitted significant phonons scattering and electrons transfer. These led to an enhanced figure-of-merit (ZT) values (0.52 and 0.97), which are considered to be significant among the reported ZT values at room-temperature for the undoped synthesized n-type Bi2Te3 nanoparticles. Therefore, the current investigation displayed an efficient method to improve ZT of TE materials via nanostructure orchestrating, resulting in a worthy candidate n-type nanostructured Bi2Te3 for room-temperature TE applications.

  6. Effect of the interface on the mechanical properties and thermal conductivity of bismuth telluride films

    Science.gov (United States)

    Lai, Tang-Yu; Wang, Kuan-Yu; Fang, Te-Hua; Huang, Chao-Chun

    2018-02-01

    Bismuth telluride (Bi2Te3) is a type of thermoelectric material used for energy generation that does not cause pollution. Increasing the thermoelectric conversion efficiency (ZT) is one of the most important steps in the development of thermoelectric components. In this study, we use molecular dynamics to investigate the mechanical properties and thermal conductivity of quintuple layers of Bi2Te3 nanofilms with different atomic arrangements at the interface and study the effects of varying layers, angles, and grain boundaries. The results indicate that the Bi2Te3 nanofilm perfect substrate has the ideal Young’s modulus and thermal conductivity, and the maximum yield stress is observed for a thickness of ∼90 Å. As the interface changed, the structural disorder of atomic arrangement affected the mechanical properties; moreover, the phonons encounter lattice disordered atomic region will produce scattering reduce heat conduction. The results of this investigation are helpful for the application of Bi2Te3 nanofilms as thermoelectric materials.

  7. Bismuth alloying properties in GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lu [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Cao, Huawei; Cai, Ningning; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, PO Box 72, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  8. Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

    2015-03-25

    Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

  9. Ballistic edge states in Bismuth nanowires revealed by SQUID interferometry.

    Science.gov (United States)

    Murani, Anil; Kasumov, Alik; Sengupta, Shamashis; Kasumov, Yu A; Volkov, V T; Khodos, I I; Brisset, F; Delagrange, Raphaëlle; Chepelianskii, Alexei; Deblock, Richard; Bouchiat, Hélène; Guéron, Sophie

    2017-07-05

    The protection against backscattering provided by topology is a striking property. In two-dimensional insulators, a consequence of this topological protection is the ballistic nature of the one-dimensional helical edge states. One demonstration of ballisticity is the quantized Hall conductance. Here we provide another demonstration of ballistic transport, in the way the edge states carry a supercurrent. The system we have investigated is a micrometre-long monocrystalline bismuth nanowire with topological surfaces, that we connect to two superconducting electrodes. We have measured the relation between the Josephson current flowing through the nanowire and the superconducting phase difference at its ends, the current-phase relation. The sharp sawtooth-shaped phase-modulated current-phase relation we find demonstrates that transport occurs selectively along two ballistic edges of the nanowire. In addition, we show that a magnetic field induces 0-π transitions and ϕ 0 -junction behaviour, providing a way to manipulate the phase of the supercurrent-carrying edge states and generate spin supercurrents.

  10. Solution processed bismuth sulfide nanowire array core/silver shuffle shell solar cells

    NARCIS (Netherlands)

    Cao, Y.; Bernechea, M.; Maclachlan, A.; Zardetto, V.; Creatore, M.; Haque, S.A.; Konstantatos, G.

    2015-01-01

    Low bandgap inorganic semiconductor nanowires have served as building blocks in solution processed solar cells to improve their power conversion capacity and reduce fabrication cost. In this work, we first reported bismuth sulfide nanowire arrays grown from colloidal seeds on a transparent

  11. Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

    International Nuclear Information System (INIS)

    Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

    2014-01-01

    Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

  12. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    International Nuclear Information System (INIS)

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-01-01

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  13. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  14. A simple fast microwave-assisted synthesis of thermoelectric bismuth telluride nanoparticles from homogeneous reaction-mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Susmita [Jadavpur University, Department of Instrumentation Science (India); Das, Rashmita [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Bhar, Radhaballabh [Jadavpur University, Department of Instrumentation Science (India); Bandyopadhyay, Rajib [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Pramanik, Panchanan, E-mail: pramanik1946@gmail.com [GLA University, Department of Chemistry and Nanoscience (India)

    2017-02-15

    A new simple chemical method for synthesis of nanocrystalline bismuth telluride (Bi{sub 2}Te{sub 3}) has been developed by microwave assisted reduction of homogeneous tartrate complexes of bismuth and tellurium metal ions with hydrazine. The reaction is performed at pH 10. The nano-crystallites have rhombohedral phase identified by XRD. The size distribution of nanoparticle is narrow and it ranges between 50 to 70 nm. FESEM shows that the fine powders are composed of small crystallites. The TEM micrographs show mostly deformed spherical particles and the lattice fringes are found to be 0.137 nm. Energy dispersive X-ray spectroscopy (EDX) analysis shows the atomic composition ratio between bismuth and tellurium is 2:3. Thermoelectric properties of the materials are studied after sintering by spark plasma sintering method (SPS). The grain size of the material after sintering is in the nanometer range. The material shows enhanced Seebeck coefficient and electrical conductivity value at 300 K. The figure of merit is found to be 1.18 at 300 K.

  15. Irradiation-induced doping of Bismuth Telluride Bi2Te3

    International Nuclear Information System (INIS)

    Rischau, Carl Willem

    2014-01-01

    Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

  16. Superconducting Properties of Lead-Bismuth Films Controlled by Ferromagnetic Nanowire Arrays

    Science.gov (United States)

    Ye, Zuxin; Lyuksyutov, Igor F.; Wu, Wenhao; Naugle, Donald G.

    2011-03-01

    Superconducting properties of lead-bismuth (82% Pb and 18% Bi) alloy films deposited on ferromagnetic nanowire arrays have been investigated. Ferromagnetic Co or Ni nanowires are first electroplated into the columnar pores of anodic aluminum oxide (AAO) membranes. Superconducting Pb 82 Bi 18 films are then quench-condensed onto the polished surface of the AAO membranes filled with magnetic nanowires. A strong dependence of the Pb 82 Bi 18 superconducting properties on the ratio of the superconducting film thickness to the magnetic nanowire diameter and the material variety was observed.

  17. The study of the sample size on the transverse magnetoresistance of bismuth nanowires

    International Nuclear Information System (INIS)

    Zare, M.; Layeghnejad, R.; Sadeghi, E.

    2012-01-01

    The effects of sample size on the galvanomagnetice properties of semimetal nanowires are theoretically investigated. Transverse magnetoresistance (TMR) ratios have been calculated within a Boltzmann Transport Equation (BTE) approach by specular reflection approximation. Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. The obtained values are in good agreement with the experimental results, reported by Heremans et al. - Highlights: ► In this study effects of sample size on the galvanomagnetic properties of Bi. ► Nanowires were explained by Parrott theorem by solving the Boltzmann Transport Equation. ► Transverse magnetoresistance (TMR) ratios have been measured by specular reflection approximation. ► Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. ► The obtained values are in good agreement with the experimental results, reported by Heremans et al.

  18. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi{sub 2}Te{sub 3}) single crystals for thermoelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, Anuj [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Singh, Budhendra [TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro (Portugal); Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Maurya, K.K. [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2016-03-07

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi{sub 2}Te{sub 3}) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  19. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  20. Synthesis, characterization and enhanced thermoelectric performance of structurally ordered cable-like novel polyaniline–bismuth telluride nanocomposite

    International Nuclear Information System (INIS)

    Chatterjee, Krishanu; Mitra, Mousumi; Banerjee, Dipali; Kargupta, Kajari; Ganguly, Saibal

    2013-01-01

    Bismuth telluride (Bi 2 Te 3 ) nanorods and polyaniline (PANI) nanoparticles have been synthesized by employing solvothermal and chemical oxidative processes, respectively. Nanocomposites, comprising structurally ordered PANI preferentially grown along the surface of a Bi 2 Te 3 nanorods template, are synthesized using in situ polymerization. X-ray powder diffraction, UV–vis and Raman spectral analysis confirm the highly ordered chain structure of PANI on Bi 2 Te 3 nanorods, leading to a higher extent of doping, higher chain mobility and enhancement of the thermoelectric performance. Above 380 K, the PANI–Bi 2 Te 3 nanocomposite with a core–shell/cable-like structure exhibits a higher thermoelectric power factor than either pure PANI or Bi 2 Te 3 . At room temperature the thermal conductivity of the composite is lower than that of its pure constituents, due to selective phonon scattering by the nanointerfaces designed in the PANI–Bi 2 Te 3 nanocable structures. The figure of merit of the nanocomposite at room temperature is comparable to the values reported in the literature for bulk polymer-based composite thermoelectric materials. (paper)

  1. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Recrystallized arrays of bismuth nanowires with trigonal orientation.

    Science.gov (United States)

    Limmer, Steven J; Yelton, W Graham; Erickson, Kristopher J; Medlin, Douglas L; Siegal, Michael P

    2014-01-01

    We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.

  3. Acetic acid-confined synthesis of uniform three-dimensional (3D) bismuth telluride nanocrystals consisting of few-quintuple-layer nanoplatelets

    KAUST Repository

    Yuan, Qiang; Radar, Kelly; Hussain, Muhammad Mustafa

    2011-01-01

    High-selectivity, uniform three-dimensional (3D) flower-like bismuth telluride (Bi2Te3) nanocrystals consisting of few-quintuple-layer nanoplatelets with a thickness down to 4.5 nm were synthesized for the first time by a facile, one-pot polyol method with acetic acid as the structure-director. Micrometre-sized 2D films and honeycomb-like spheres can be obtained using the uniform 3D Bi2Te3 nanocrystals as building blocks. © The Royal Society of Chemistry 2011.

  4. Semimetal-semiconductor transitions in bismuth-antimony films and nanowires induced by size quantization

    International Nuclear Information System (INIS)

    Nikolaeva, A.A.; Konopko, L.A.; Grabov, V.M.; Komarov, V.A.; Kablukova, N.; Popov, I.A.

    2013-01-01

    Full text:Single-crystal bismuth films and nanowires undergo a transformation from semimetal to semiconductor (SMSC) thanks to the manifestation of quantum size effects, which modify phonon transport, which may be of practical interest. This effect must be most pronounced in single Bi 1-x Sb x nanostructures in the semimetal phase(x < 0.04) with a minimal overlapping of L and T bands. In this paper we present the experimental results an investigation of the low- temperature electrical transport, thermoelectrical properties, SdH oscillations of BiSb films, grown by vacuum thermal evaporation and nanowires prepared by a modified Ulitovsky - Teilor technique. We confirmed with X-ray diffraction that the trigonal axis were perpendicular to the film plane. The single Bi-2at% Sb nanowires with diameter 100-1000nm were represented single crystals in glass capillary with (1011) orientation along the wire axis. The investigations the Shubnikov de Haas oscillations shows, that overlapping L and-T- bands was in two time smaller, than in pure Bi. The quantum dimensional effect induced SMSC transition is observed in Bi-Sb films and nanowires at the wires diameters up to five times greater, than in pure Bi. That experimental fact on the one site will be allow to go at higher temperatures with the same diameters nanowires, and on the other hand allows to separate effects connected with surface state and QSE. We also discuss the thermoelectric properties for optimizing their performance for certain, such as thermoelectrics.

  5. Size-effect features on the magnetothermopower of bismuth nanowires

    International Nuclear Information System (INIS)

    Condrea, E.; Nicorici, A.

    2011-01-01

    Full text: In this work we have studied the magnetic field dependence of the thermopower (TEP) and resistance of glass-coated Bi wires with diameter (d) from 100 nm to at 1.5 μm below 80 K. Nanowires have anomalously large values of the thermopower (+100 μV K.1) and relatively high effective resistivities, but their frequencies of SdH oscillations remain those of bulk Bi. The TEP stays positive in longitudinal magnetic fields up to 15 T, where the surface scattering of charge carriers is negligible. Our analysis shows that the anomalous thermopower has a diffusion origin and is a consequence of the microstructure rather than the result of the strong scattering of electrons by the wire walls. The intensities of field at which the size-effect features appear on the magnetothermopower curves correspond to a value at which the diameter of the hole cyclotron orbit equals d. Size-effect features were observed only for set of nanowires with d = 100-350 nm, where diffusion TEP is dominant. The contribution of the phonon-drag effect was observed in a wire with diameter larger than 400 nm and becomes dominant at diameter of 1 μm. (authors)

  6. Templated growth of cadmium zinc telluride (CZT) nanowires using pulsed-potentials in hot non-aqueous solution

    International Nuclear Information System (INIS)

    Gandhi, T.; Raja, K.S.; Misra, M.

    2006-01-01

    A single step non-aqueous electrodeposition of cadmium zinc telluride (CZT) nanowires on nanoporous TiO 2 substrate was investigated under pulsed-potential conditions. Propylene carbonate was used as the non-aqueous medium. Cyclic voltammogram studies were carried out to understand the growth mechanism of CZT. EDAX and XRD measurements indicated formation of a compound semiconductor with a stoichiometry of Cd 1-x Zn x Te, where x varied between 0.04 and 0.2. Variation of the pulsed-cathodic potentials could modulate the composition of the CZT. More negative cathodic potentials resulted in increased Zn content. The nanowires showed an electronic band gap of about 1.6 eV. Mott-Schottky analyses indicated p-type semiconductor properties of both as-deposited and annealed CZT materials. Increase in Zn content increased the charge carrier density. Annealing of the deposits resulted in lower charge carrier densities, in the order of 10 15 cm -3

  7. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Yamaguchi, Masashi [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  8. Enhancing Thermoelectric Performances of Bismuth Antimony Telluride via Synergistic Combination of Multiscale Structuring and Band Alignment by FeTe2 Incorporation.

    Science.gov (United States)

    Shin, Weon Ho; Roh, Jong Wook; Ryu, Byungki; Chang, Hye Jung; Kim, Hyun Sik; Lee, Soonil; Seo, Won Seon; Ahn, Kyunghan

    2018-01-31

    It has been a difficulty to form well-distributed nano- and mesosized inclusions in a Bi 2 Te 3 -based matrix and thereby realizing no degradation of carrier mobility at interfaces between matrix and inclusions for high thermoelectric performances. Herein, we successfully synthesize multistructured thermoelectric Bi 0.4 Sb 1.6 Te 3 materials with Fe-rich nanoprecipitates and sub-micron FeTe 2 inclusions by a conventional solid-state reaction followed by melt-spinning and spark plasma sintering that could be a facile preparation method for scale-up production. This study presents a bismuth antimony telluride based thermoelectric material with a multiscale structure whose lattice thermal conductivity is drastically reduced with minimal degradation on its carrier mobility. This is possible because a carefully chosen FeTe 2 incorporated in the matrix allows its interfacial valence band with the matrix to be aligned, leading to a significantly improved p-type thermoelectric power factor. Consequently, an impressively high thermoelectric figure of merit ZT of 1.52 is achieved at 396 K for p-type Bi 0.4 Sb 1.6 Te 3 -8 mol % FeTe 2 , which is a 43% enhancement in ZT compared to the pristine Bi 0.4 Sb 1.6 Te 3 . This work demonstrates not only the effectiveness of multiscale structuring for lowering lattice thermal conductivities, but also the importance of interfacial band alignment between matrix and inclusions for maintaining high carrier mobilities when designing high-performance thermoelectric materials.

  9. Mechanical properties of bismuth telluride (Bi{sub 2}Te{sub 3}) processed by high pressure torsion (HPT); Propiedades mecanicas del telururo de bismuto (Bi{sub 2}Te{sub 3}) procesado mediante torsion bajo alta presion (HPT)

    Energy Technology Data Exchange (ETDEWEB)

    Santamaria, J. A.; Alkorta, J.; Gil Sevillano, J.

    2013-06-01

    Bismuth telluride, Bi{sub 2}Te{sub 3}, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi{sub 2}Te{sub 3} is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric figure of merit results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa) using high pressure torsion (HPT, one turn at room temperature). Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation. (Author) 11 refs.

  10. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    Science.gov (United States)

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-08

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

  11. Tuning of the Seebeck Coefficient and the Electrical and Thermal Conductivity of Hybrid Materials Based on Polypyrrole and Bismuth Nanowires.

    Science.gov (United States)

    Hnida, Katarzyna E; Pilarczyk, Kacper; Knutelski, Marcin; Marzec, Mateusz; Gajewska, Marta; Kosonowski, Artur; Chlebda, Damian; Lis, Bartłomiej; Przybylski, Marek

    2018-04-06

    The growing demand for clean energy catalyzes the development of new devices capable of generating electricity from renewable energy resources. One of the possible approaches focuses on the use of thermoelectric materials (TE), which may utilize waste heat, water, and solar thermal energy to generate electrical power. An improvement of the performance of such devices may be achieved through the development of composites made of an organic matrix filled with nanostructured thermoelectric materials working in a synergetic way. The first step towards such designs requires a better understanding of the fundamental interactions between available materials. In this paper, this matter is investigated and the questions regarding the change of electrical and thermal properties of nanocomposites based on low-conductive polypyrrole enriched with bismuth nanowires of well-defined geometry and morphology is answered. It is clearly demonstrated that the electrical conductivity and the Seebeck coefficient may be tuned either simultaneously or separately within particular Bi NWs content ranges, and that both parameters may be increased at the same time. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Anomalies in the transverse magnetoresistance of bismuth nanowires in the quantum low-dimensional limit

    International Nuclear Information System (INIS)

    Nikolaeva, A.A.; Konopko, L.A.; Tsurkan, A.K.; Botnari, O.V.

    2013-01-01

    Full text: We report here anomalies observed at low temperatures in the transverse magnetoresistance of single Bi nanowires. Bi wires in glass capillary were prepared by liquid phase casting technique with diameters up to 45 nm. The Bi wire are single crystals, with their axis oriented in the bisectrix trigonal plane, about 19 degrees from bisectrix axis. For the first time it was found that the field dependence of transverse magnetoresistance (TMR), R(H) at I perpendicular H in Bi wires with d 0 at T<5K. Effect has been observed at low temperatures in Bi nanowires, with diameter around the critical diameter, at the semimetal-to-semiconductor transition (SMSCT) due to size quantization effect. To interpret these anomalous an accurate model of parabolic potentials taken into account the anisotropy of effective mass of current carriers have been used. The electrical conductivity of quantum Bi wires in the homogeneous magnetic field, directed perpendicular to axis of quantum wire is calculated using the Cubo formula taking into account the scattering process carrier on the interface roughest and phonons. The experimental results confirm the existence of the semimetal-semiconductor phase transition seen in the transverse magnetoresistance.

  13. Facile one-step direct electrodeposition of bismuth nanowires on glassy carbon electrode for selective determination of folic acid

    International Nuclear Information System (INIS)

    Ananthi, Arjunan; Kumar, Shanmugam Senthil; Phani, Kanala Lakshminarasimha

    2015-01-01

    Highlights: • BiNWs prepared through simple, fast one step electrochemical route. • BiNWs showed more catalytic activity and sensitivity than GC towards FA reduction. • Selective detection of FA was achieved with low limit of detection (9.53 × 10 −9 mol L −1 ). • Real sample analysis was successfully demonstrated using FA pharmaceutical tablets. • BiNWs based sensor matrix is inexpensive, and more suitable for FA real application. - Abstract: In the present work, we have developed a facile one step route to electrodeposition of stabilizer-free bismuth nanowires (BiNWs) on glassy carbon (GC) substrates by using a simple potentiostatic method. Formation of BiNWs on GC substrate was confirmed by field emission scanning electron microscopy (FE-SEM). The growth of BiNWs on the GC substrate was monitored by cyclic voltammetry and found that continuous in-situ generation of hydrogen bubbles during electrodeposition provides a stagnant template for the formation of BiNWs on the GC substrate. Phase-purity of the deposited BiNWs on GC substrate studied by XRD indicates no other oxide formation. The electrodeposited BiNWs on GC substrate was used for electro-reduction of folic acid (FA) and its quantitative determination in Britton-Robinson buffer of pH 4.5 solutions. The observed cyclic voltammetric reduction current of FA on BiNWs/GC is almost 15 times higher with 0.015 V less negative overpotential compared to bare GC substrate alone. This result clearly reveals the electrocatalytic activity of the deposited BiNWs. In addition, square wave voltammetry (SWV) showed a perfectly linear response in the concentration range of 1 × 10 −8 –15 × 10 −8 mol L −1 with a correlation coefficient of 0.9956. The limit of detection (LOD) and limit of quantitation (LOQ) are determined to be 9.53 × 10 −9 and 31.68 × 10 −9 mol L −1 respectively. The response of the BiNWs/GC sensor matrix is not affected by any usual interference from excess concentrations of

  14. High-temperature thermoelectric behavior of lead telluride

    Indian Academy of Sciences (India)

    The central problem in thermoelectric material research is the selection of ... temperature range (400–1000 K), and bismuth telluride-based materials .... parent from the results that band non-parabolicity has a significant effect on the .... M P Singh thankfully acknowledges financial assistance from the Council of Scien-.

  15. Electrodeposition of textured Bi27Sb28Te45 nanowires with enhanced electrical conductivity

    International Nuclear Information System (INIS)

    Hasan, Maksudul; Gautam, Devendraprakash; Enright, Ryan

    2016-01-01

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi 1-x Sb x ) 2 Te 3 nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi 27 Sb 28 Te 45 nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10 4  S m −1 ) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi 1-x Sb x ) 2 Te 3 nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  16. Electrodeposition of textured Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires with enhanced electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)

    2016-04-15

    This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

  17. Geometric effects on surface states in topological insulator Bi2Te3 nanowire

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

    2012-02-01

    Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

  18. The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

    Science.gov (United States)

    Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

    2016-02-01

    We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

  19. Bismuth-silver mineralization in the Sergozerskoe gold occurrence

    Directory of Open Access Journals (Sweden)

    Kalinin A. A.

    2017-03-01

    Full Text Available Bismuth-silver mineralization attendant to gold mineralization in the Sergozerskoe gold occurrence has been studied in detail. Bi-Ag mineralization is connected with diorite porphyry dykes, which cut volcanic-sedimentary Lopian complexes of the Strel'ninsky greenstone belt – hornblendite and actinolite-chlorite amphibolites, biotite and bi-micaceous gneisses. Distribution of Bi-Ag mineralization similar to gold mineralization is controlled by 80 m thick zone of silicification. Bi minerals are found in brecciated diorite porphyry. Bismuth-silver mineralization includes native metals (bismuth, electrum, silver, tellurides (hedleyite, hessite, selenides (ikunolite, sulfides and sulfosalts of Bi and Ag (matildite, lillianite, eckerite, jalpaite, prustite, acanthite, a few undiagnosed minerals. All Bi and Ag minerals associate with galena. Composition of mineralization evolved from early to late stages of development, depending on intensity of rock alteration. The earliest Bi-Ag minerals were native bismuth and hedleyite formed dissemination in galena, and electrum with 30-45 mass.% Au. Later native bismuth was partly substituted by silver and bismuth sulfosalts and bismuth sulfides. The latest minerals were low-temperature silver sulfides eckerite, jalpaite, and acanthite, which were noted only in the most intensively altered rocks. As soon as the process of formation of Bi-Ag mineralization is the same as formation of gold, findings of bismuth-silver mineralization can serve as a positive exploration sign for gold in the region.

  20. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  1. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

    CERN Document Server

    Mishra, S K; Jepsen, O

    1997-01-01

    The electronic structures of the two thermoelectric materials Bi sub 2 Te sub 3 and Bi sub 2 Se sub 3 are studied using density-functional theory with the spin - orbit interaction included. The electron states in the gap region and the chemical bonding can be described in terms of pp sigma interaction between the atomic p orbitals within the 'quintuple' layer. For Bi sub 2 Se sub 3 , we find both the valence-band maximum as well as the conduction-band minimum, each with a nearly isotropic effective mass, to occur at the zone centre in agreement with experimental results. For Bi sub 2 Te sub 3 , we find that the six valleys for the valence-band maximum are located in the mirror planes of the Brillouin zone and they have a highly anisotropic effective mass, leading to an agreement between the de Haas-van Alphen data for the p-doped samples and the calculated Fermi surface. The calculated conduction band, however, has only two minima, instead of the six minima indicated from earlier experiments. The calculated S...

  2. Nanolithography on mercury telluride

    International Nuclear Information System (INIS)

    Muehlbauer, Mathias Josef

    2015-01-01

    a function of external gate voltage. Our measurements clearly exhibit quantized conductance steps in 2e"2/h, which is a fundamental characteristic of quantum point contacts. Furthermore we conducted measurements on the formation and control of collimated electron beams, a key feature to realize an all electrical spin-optic device. In a second study several of the newly developed lithography techniques were implemented to produce arrays of nano-wires on inverted and non-inverted HgTe quantum well samples. These devices were used in order to probe and compare the weak antilocalization (WAL) in these structures as a function of magnetic field and temperature. Our measurements reveal that the WAL is almost an order of magnitude larger in inverted samples. This observation is attributed to the Dirac-like dispersion of the energy bands in HgTe quantum wells. The described lithography has already been successfully implemented and adapted in several published studies. All processes have been optimized to guarantee a minimum effect on the heterostructure's properties and the sample surface, which is especially important for probing the topological surface states of strained HgTe bulk layers. Our developments therefore serve as a base for continuous progress to further establish HgTe as a topological insulator and give access to new experiments.

  3. Quantum oscillations of conductivity in bismuth wires

    International Nuclear Information System (INIS)

    Condrea, Elena

    2011-01-01

    Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38 %) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. A simple evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.

  4. Localization and Related Phenomena in Multiply Connected Nanostructured Inverse Opal Bismuth

    Science.gov (United States)

    Bleiweiss, Michael; Saygi, Salih; Amirzadeh, Jafar; Datta, Timir; Lungu, Anca; Yin, Ming; Palm, Eric; Brandt, Bruce; Iqbal, Zafar

    2001-03-01

    The nanostructures were fabricated by pressure infiltration of bismuth into porous artificial opal and were characterized using SEM, EDX and XRD. These structures form a regular three-dimensional network in which the bismuth regions percolate in all directions between the close packed spheres of SiO_2. The sizes of the conducting regions are of the order of tens of nanometers. The static magnetic properties of both bismuth inverse opal and bulk bismuth were studied using a SQUID magnetometer. Transport measurements, including Hall, were done using standard ac four and six probe techniques in fields up to 17 T* and temperatures between 4.2 and 150 K. The results of these measurements, including the observation of localization phenomena, will be discussed. Comparisons will be made with published results on bismuth nanowires. *Performed at the National High Magnetic Field Lab (NHMFL) FSU, Tallahassee, FL. Partially supported by a grant from NASA.

  5. Synthesis of copper telluride nanowires using template-based ...

    Indian Academy of Sciences (India)

    Anodized alu- minum oxide foil (AAO) acts as template and electrodeposi- tion is conducted in a ... the nanopores were perpendicular to the AAO membrane sur- face and were uniform in ... Aluminium oxide 0·02–0·2. 13, 21, 47. 60. 105. –.

  6. Valley polarization in bismuth

    Science.gov (United States)

    Fauque, Benoit

    2013-03-01

    The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

  7. The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires

    International Nuclear Information System (INIS)

    Kojda, D; Mitdank, R; Fischer, S F; Mogilatenko, A; Töllner, W; Nielsch, K; Wang, Z; Kröner, M; Woias, P

    2014-01-01

    The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and morphology is under debate. Here, we choose two individual bismuth telluride nanowires (NWs), one with a strong diameter variation between 190 nm and 320 nm (NW1) and the other of 187 nm diameter with smooth sidewalls (NW2). Both serve as model systems for which bulk properties are expected if surface properties do not contribute. We investigate the role of the diameter variation by means of a combined full-thermoelectrical, structural and chemical characterization. By transmission electron microscopy the structure, chemical composition and morphology were determined after the thermoelectrical investigation. The NWs showed an oriented growth along the [110] direction and the same composition. The Seebeck coefficients of both NWs are comparable to each other. The electrical conductivity of both NWs exceeds the bulk value indicating the presence of a topological surface state. Whereas the thermal conductivity of NW2 compares to the bulk, the thermal conductivity of NW1 is about half of NW2 which is discussed with respect to its distinct diameter variation. (invited article)

  8. Rise time spectroscopy in cadmium telluride detectors

    International Nuclear Information System (INIS)

    Scharager, Claude; Siffert, Paul; Carnet, Bernard; Le Meur, Roger.

    1980-11-01

    By a simultaneous analysis of rise time and pulse amplitude distributions of the signals issued from various cadmium telluride detectors, it is possible to obtain informations about surface and bulk trapping, field distribution within the detectors, as well as charge collection and transport properties. These investigations have been performed on both pure and chlorine doped and materials for various surfaces preparation conditions [fr

  9. Bismuth toxicity in patients treated with bismuth iodoform paraffin packs.

    Science.gov (United States)

    Atwal, A; Cousin, G C S

    2016-01-01

    Bismuth is a heavy metal used in bismuth iodoform paraffin paste (BIPP) antiseptic dressings and in a number of other medical preparations. It can be absorbed systemically and cause toxicity. We report 2 cases of such neurotoxicity after it was used in operations on the jaws. Copyright © 2015. Published by Elsevier Ltd.

  10. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  11. Occurency and aqueous processing of tellurides from Sonora (Mexico)

    International Nuclear Information System (INIS)

    Aguayo, S.; Perez, E.; Ecinas, M.A.

    1996-01-01

    Tellurium production is limited mainly to that obtained from the treatment of electrolyte muds from copper refineries. however, there are several other sources from which the precious metal tellurides are potentially attractive. This work presents a review of the main localitiesin Sonora (Mexico), where tellurides have been found. In addition, based upon the physical chemistry fundamentals for tellurium and precious metal tellurides, the aqueous extraction and recovery routes are discussed. (Author) 51 refs

  12. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  13. Synthesis and characterization of titanium oxide/bismuth sulfide nanorods for solar cells applications

    International Nuclear Information System (INIS)

    Solis, M.; Rincon, M. E.

    2008-01-01

    In the present work is showed the synthesis and characterization of titanium oxide/bismuth sulfide nanowires hetero-junctions for solar cells applications. Conductive glass substrates (Corning 25 x 75 mm) were coated with a thin layer of sol-gel TiO2 and used as substrates for the subsequent deposition of bismuth sulfide nanorods (BN). TiO2 films (∼400 nm) were deposited with a semiautomatic immersion system with controlled immersion/withdraw velocity, using titanium isopropoxide as the titania precursor [1]. For BN synthesis and deposition, the solvo-thermal method was used, introducing air annealed TiO2-substrates in the autoclave. The typical bilayer TiO2/BN hetero-junction was 600 nm thick. The synthesized materials (powders and films) were characterized by X-Ray Diffraction, Scanning Electron Microscopy, and UV-Visible Spectroscopy. Anatase was the crystalline phase of TiO2, while bismuth sulfide nanotubes show a diffraction pattern characteristic of bismuthinite distorted by the preferential growth of some planes [2-4]. The optoelectronic characterization of TiO2/NB hetero-junctions was compared with hetero-junctions obtained by sensitizing TiO2 with chemically deposited bismuth sulfide films. Bismuth sulfide nanowires are 2µm long and 70nm wide (aspect ratio L/D = 43), while chemically deposited bismuth sulfide have L/D = 1, therefore the effect of particle size evaluation and geometry in the photosensitization phenomena will be discussed in the context of new materials for solar-cells applications. (Full text)

  14. Tellurium self-diffusion and point defects in lead telluride

    International Nuclear Information System (INIS)

    Simirskij, Yu.N.; Firsova, L.P.

    1982-01-01

    Method of radioactive indicators was used to determine factors of tellurium self-diffusion in lead telluride with different deviation of the composition from stoichiometric in the range of enrichment by tellurium. It was found that at 973 K factors of tellurium self-diffusion in lead telluride depend slightly on the vapor pressure of tellurium equilibrium with solid phase

  15. Development of planar waveguides in zinc telluride

    International Nuclear Information System (INIS)

    Valette, Serge

    1977-02-01

    Zinc telluride (ZnTe) is one of the most attractive semi-conductors for monolithic integrated optics. In this study, the general characteristics of the planar optical waveguides achieved by implantation of light ions in ZnTe are investigated. Different aspects of prism-coupling and coherent light guiding have been taken up theoretically and experimentally. Some assumptions about the physical origin of these structures are discussed in order to explain all these results and the weak losses which have been measured. [fr

  16. Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

    KAUST Repository

    Gupta, R. P.; Iyore, O. D.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

    2009-01-01

    Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

  17. Structure and adhesive properties of solid solution specimen surfaces based on bismuth tellurides after cutting

    International Nuclear Information System (INIS)

    Dik, M.G.; Rybina, L.N.; Dubrovina, A.N.; Abdinov, D.Sh.

    1988-01-01

    Structure and depth of broken layer, occuring at electroerosion cutting along ingot samples axis of Bi 2 Te 3 -Bi 2 Se 3 , Bi 2 Te 3 -Sb 2 Te 3 systems solid solutions (obtained by methods of directed crystallization and extrusion), and equilibrium contact angle θ, adhesion effort A and contact resistance r c of these crystals contacts with eutectic alloy of Bi-Sn system are investigated. Depth and structure of the broken layer were determined by means of stage-by-stage scouring-etching and X-ray investigation of cutting surface. It is shown, that etching during ∼50 c in large-block material eliminates polycrystalline layer, lattice bendings, resulting in Laue spots asterism, but does not remove their fragmentation and wash-out. Slots wash-out reduces, while fragmentation remains even after continuous etching. Etching with duration from ∼50 c up to 30-40 min practically does not change the character of polycrystalline samples diffraction pattern

  18. In situ deformation and mechanical properties of bismuth telluride prepared via zone melting

    Science.gov (United States)

    Lai, Tang-Yu; Hsiao, Yu-Jen; Fang, Te-Hua

    2018-03-01

    In this study, we prepared Bi2Te3 nanostructures via zone melting and characterized their mechanical properties by nanoindentation and in situ transmission electron microscopy (TEM). The nanoindentation results revealed that a significant ‘pop-in’ phenomenon occurs under high-loading conditions with multiple dislocations and phase transitions in the material structure. Young’s modulus of the nanostructures was found to be 42.7 ± 2.56 GPa from nanoindentation measurements and 12.3 ± 0.1 GPa from in situ TEM measurements. The results of this study may be useful for the future development of Bi2Te3 thermoelectric devices via printing processes.

  19. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  20. Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)

    International Nuclear Information System (INIS)

    Guha Thakurta, S.R.; Dutta, A.K.

    1977-01-01

    Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)

  1. Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

    KAUST Repository

    Gupta, R. P.

    2009-08-13

    Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

  2. Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

    Science.gov (United States)

    Lukyanova, L. N.; Makarenko, I. V.; Usov, O. A.; Dementev, P. A.

    2018-05-01

    The morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2‑xSbxTe3‑ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. The topological characteristics of the Dirac fermion surface states were determined. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A correlation between topological characteristics, power factor and material parameters was found. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x > 1.5 and small substitutions in the Te sublattice (y = 0.06). In compositions with smaller substitutions at x = (1–1.3) and y = (0.06–0.09), similar effect of the surface states is determined by raising the surface concentration of charge carriers.

  3. Iron telluride nanorods-based system for the detection of total mercury in blood

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Prathik; Lin, Zong-Hong [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Liang, Chi-Te [Department of Physics, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Huan-Tsung, E-mail: changht@ntu.edu.tw [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-12-15

    Graphical abstract: Elucidation of the detection of mercury using iron telluride nanorods (FeTe NRs), and dose-response curve for varying concentrations of Hg{sup 2+}. Highlights: Black-Right-Pointing-Pointer Iron telluride nanorods (FeTe NRs) are prepared from tellurium nanowires (Te NWs). Black-Right-Pointing-Pointer Mercury telluride nanorods (HgTe NRs) form by cation exchange reaction of FeTe NRs. Black-Right-Pointing-Pointer Fe{sup 2+} ions released catalyze the oxidation of ABTS by H{sub 2}O{sub 2}. Black-Right-Pointing-Pointer Mercury is effectively determined in blood with an LOD of 1.31 nM at S/N ratio 3. - Abstract: We have developed a simple, colorimetric iron telluride (FeTe) nanorods (NRs) based system for the detection of mercury, mainly based on the cation exchange reaction between FeTe NRs and Hg{sup 2+}. FeTe NRs (length, 105 {+-} 21 nm) react with Hg{sup 2+} to form HgTe NRs (length, 112 {+-} 26 nm) and consequently release Fe{sup 2+} ions that catalyzes the oxidation between a peroxidase substrate 2,2 Prime -azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) and H{sub 2}O{sub 2}. The concentration of Fe{sup 2+} and thereby Hg{sup 2+} can be determined by measuring the absorbance of the ABTS oxidized product at 418 nm. This approach allows the detection of Hg{sup 2+}, with a limit of detection of 1.31 nM at a signal-to-noise ratio 3 and a linear range 5-100 nM (R{sup 2} = 0.99). The low-cost, simple, sensitive, and reproducible assay has been validated for the detection of Hg{sup 2+} in a blood sample (SRM 955c), with the result being in good agreement with that provided by National Institute of Standards and Technology.

  4. Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization

    International Nuclear Information System (INIS)

    Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D

    2007-01-01

    A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions

  5. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  6. Mercury telluride as a zero-gap semiconductor

    International Nuclear Information System (INIS)

    Berchenko, N.N.; Pashkovskij, M.V.

    1976-01-01

    The paper presents a review of main properties of mercury telluride which is a representative of a new class of substances - gapless semiconductors. The causes leading to the appearance of a gapless state in mercury chalcogenides are considered; it is demonstrated that the main role in the formation of the inverse band structure belongs to relativistic corrections. The specific properties of mercury telluride are associated with the zero forbidden band, p-like nature of electron states of the conduction band and its nonparabolicity, resonance states of impurities and anomalies of dielectric permittivity. Conditions of forbidden band appearing in mercury telluride under the effect external factors are analyzed

  7. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

    Science.gov (United States)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-27

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al 2 O 3 ) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al 2 O 3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al 2 O 3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al 2 O 3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  8. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  9. Telluride School, Telluride, Colorado solar-energy-system performance evaluation, February 1982-April 1982

    Energy Technology Data Exchange (ETDEWEB)

    Welch, K.M.

    1982-01-01

    The Telluride School solar site is an elementary/junior-senior high school in Colorado with a passive/active hybrid solar energy system designed to supply 40% of the heating load. It is equipped with a 1428 square foot, double glazed Trombe wall, a 1392 square foot greenhouse with collection tube, and an auxiliary oil-fired boiler. Monthly performance data are tabulated for the overall system and for the Trombe wall, greenhouse, and greenhouse storage. System operation is illustrated by graphs of typical Trombe wall insolation and temperatures and typical greenhouse insolation and temperatures. (LEW)

  10. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    Science.gov (United States)

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  11. Iodine Gas Trapping using Granular Porous Bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jae Hwan; Shin, Jin Myeong; Park, Jang Jin; Park, Geun Il [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Yim, Mansung [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2014-05-15

    {sup 129}I is a radionuclide with a very long half-life of 1.57 Χ 10{sup 7} years and has negative health effects to the human body. Therefore, the emission of {sup 129}I into the air is closely regulated by the Environmental Protection Agency (EPA). Many methods for trapping gaseous {sup 129}I have been developed thus far, including wet scrubbing and adsorption using silver loaded zeolites. Although wet scrubbing can effectively remove iodine, it suffers from corrosion of the vessel due to high concentration of the scrubbing solution. Silver loaded zeolites also show effectiveness in capturing {sup 129}I gas, yet weak thermal stability of physisorbed iodine remains a challenge. We studied a novel and facile method to trap iodine gas using bismuth. Granular bismuth having many pores was synthesized using bismuth nitrate and polyvinyl alcohol as a bismuth precursor and pore forming agent, respectively. Reaction of iodine and our samples resulted in an iodine capturing capacity of more than 2 times that of the commercial grade silver exchanged zeolite (AgX). Granular porous bismuths synthesized using bismuth nitrate and PVA show a promising performance in capturing iodine gas. The use of bismuth in trapping {sup 129}I gas can reduce the process cost as bismuth is cheap. Further study is going on to improve the mechanical property of granular porous bismuths for their easy handling.

  12. Iodine Gas Trapping using Granular Porous Bismuth

    International Nuclear Information System (INIS)

    Yang, Jae Hwan; Shin, Jin Myeong; Park, Jang Jin; Park, Geun Il; Yim, Mansung

    2014-01-01

    129 I is a radionuclide with a very long half-life of 1.57 Χ 10 7 years and has negative health effects to the human body. Therefore, the emission of 129 I into the air is closely regulated by the Environmental Protection Agency (EPA). Many methods for trapping gaseous 129 I have been developed thus far, including wet scrubbing and adsorption using silver loaded zeolites. Although wet scrubbing can effectively remove iodine, it suffers from corrosion of the vessel due to high concentration of the scrubbing solution. Silver loaded zeolites also show effectiveness in capturing 129 I gas, yet weak thermal stability of physisorbed iodine remains a challenge. We studied a novel and facile method to trap iodine gas using bismuth. Granular bismuth having many pores was synthesized using bismuth nitrate and polyvinyl alcohol as a bismuth precursor and pore forming agent, respectively. Reaction of iodine and our samples resulted in an iodine capturing capacity of more than 2 times that of the commercial grade silver exchanged zeolite (AgX). Granular porous bismuths synthesized using bismuth nitrate and PVA show a promising performance in capturing iodine gas. The use of bismuth in trapping 129 I gas can reduce the process cost as bismuth is cheap. Further study is going on to improve the mechanical property of granular porous bismuths for their easy handling

  13. Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

    International Nuclear Information System (INIS)

    Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

    2014-01-01

    We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

  14. Oxygen depletion of bismuth molybdates

    Energy Technology Data Exchange (ETDEWEB)

    Yong, L.K.; Howe, R.F.; Keulks, G.W.; Hall, W.K.

    1978-05-01

    Pure ..cap alpha..-phase bismuth molybdate (Bi/sub 2/Mo/sub 3/O/sub 12/), which is known to be weakly active for selective oxidation, and pure ..gamma..-phase bismuth molybdate (Bi/sub 2/MoO/sub 6/), which has good activity, were subjected to oxidation-reduction cycles with known amounts of hydrogen and oxygen, at 300/sup 0/-570/sup 0/C and with evacuation steps between treatments. The volume of oxygen consumed during reoxidation was equal to half the hydrogen consumed during the reduction on the ..cap alpha..-phase, which indicated that no hydrogen was retained during reduction. For the ..gamma..-phase, the oxygen consumption was greater than half of the hydrogen consumption and it increased with extent of reduction. The excess oxygen was apparently consumed by filling anion vacancies formed during outgassing subsequent to the reduction step. ESR spectroscopy and temperature-programed oxidation-reduction indicated that lattice oxide ions which bridge between bismuth and molybdenum layers of the koechlinite structure become more labile when the catalyst is in a partially reduced state, and that this effect is greater in the ..gamma..- than the ..cap alpha..-phase. Table and 15 references.

  15. Bismuth absorption from sup 205 Bi-labelled pharmaceutical bismuth compounds used in the treatment of peptic ulcer disease

    Energy Technology Data Exchange (ETDEWEB)

    Dresow, B.; Fischer, R.; Gabbe, E.E.; Wendel, J.; Heinrich, H.C. (Eppendorf University Hospital, Hamburg (Germany))

    1992-04-01

    The absorption of bismuth from five {sup 205}Bi-labelled pharmaceutically used bismuth compounds was studied in man. From single oral doses of all compounds under investigation only <0.1% bismuth was absorbed and excreted with the urine. A significantly higher absorption was observed from the colloidal bismuth subcitrate and the basic bismuth gallate than from the basic bismuth salicylate, nitrate and aluminate. No retention of bismuth in the whole body was found from the single dose experiment. The biologic fast-term half-lives of absorbed bismuth were calculated to be 0.12 and 1.5 days. 14 refs., 2 figs., 1 tab.

  16. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators

    International Nuclear Information System (INIS)

    Schmitz, Andreas

    2013-01-01

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb 1-x Ca x Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric properties

  17. Indium telluride nanotubes: Solvothermal synthesis, growth mechanism, and properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liyan [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Yan, Shancheng, E-mail: yansc@njupt.edu.cn [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China); Lu, Tao; Shi, Yi; Wang, Jianyu [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Yang, Fan [School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)

    2014-03-15

    hydrogen storage, compared with the nanowires. The nanotube device also has a broad light detection range from 300 nm to 1100 nm, covering the UV–visible–NIR region. This good performance of In{sub 2}Te{sub 3} nanotubes may enable significant advancements of new photodetection and photosensing applications. Highlights: • The In{sub 2}Te{sub 3} nanotube device also has a broad light detection range from 300 nm to 1100 nm. • The nanotube is 137.85 m{sup 2} g{sup −1}, which makes it suitable for gas sensing and hydrogen storage. • A possible growth mechanism of the indium telluride nanotubes was proposed. • In addition, no In{sub 2}Te{sub 3} nanotubes have been reported until now.

  18. Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

    Energy Technology Data Exchange (ETDEWEB)

    Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Schmitz, Andreas [Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany); Hartung, David; Klar, Peter J. [Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Dankwort, Torben; Kienle, Lorenz [Institute for Material Science, Christian-Albrechts-University, Kaiserstrasse 2, D-24143 Kiel (Germany); Mueller, Eckhard, E-mail: Eckhard.Mueller@dlr.de [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany)

    2016-06-07

    We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Room temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.

  19. Photoresponsive properties of ultrathin silicon nanowires

    International Nuclear Information System (INIS)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas

    2014-01-01

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10 4  A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices

  20. Photoresponsive properties of ultrathin silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, MM Bldg., Mawson Lakes Blvd., Mawson Lakes, South Australia 5095 (Australia); Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas, E-mail: a.offenhaeusser@fz-juelich.de, E-mail: benjamin.thierry@unisa.edu.au [Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 2.4v Bldg., Wilhelm-Johnen St., Jülich 52428 (Germany)

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  1. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  2. Vertical nanowire architectures

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  3. Bismuth ions are metabolized into autometallographic traceable bismuth-sulphur quantum dots

    Directory of Open Access Journals (Sweden)

    M Stoltenberg

    2009-06-01

    Full Text Available Bismuth – sulphur quantum dots can be silver enhanced by autometallography (AMG. In the present study, autometallographic silver enhanced bismuth-sulphur nanocrystals were isolated from unfixed cryo-sections of kidneys and livers of rats exposed to bismuth (Bi207 subnitrate. After being subjected to AMG all the organic material was removed by sonication and enzymatic digestion and the silver enhanced Bi- S quantum dots spun down by an ultracentrifuge and analyzed by scintillation. The analysis showed that the autometallographic technique traces approximately 94% of the total bismuth. This implies that the injected bismuth is ultimately captured in bismuthsulphur quantum dots, i.e., that Bi-S nanocrystals are the end product of bismuth metabolism

  4. Fabrication of multilayer nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  5. Fabrication of multilayer nanowires

    International Nuclear Information System (INIS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  6. Gamma-ray peak shapes from cadmium zinc telluride detectors

    Energy Technology Data Exchange (ETDEWEB)

    Namboodiri, M.N.; Lavietes, A.D.; McQuaid, J.H.

    1996-09-01

    We report the results of a study of the peak shapes in the gamma spectra measured using several 5 x 5 x 5 mm{sup 3} cadmium zinc telluride (CZT) detectors. A simple parameterization involving a Gaussian and an exponential low energy tail describes the peak shapes sell. We present the variation of the parameters with gamma energy. This type of information is very useful in the analysis of complex gamma spectra consisting of many peaks.

  7. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  8. Gravimetric Analysis of Bismuth in Bismuth Subsalicylate Tablets: A Versatile Quantitative Experiment for Undergraduate Laboratories

    Science.gov (United States)

    Davis, Eric; Cheung, Ken; Pauls, Steve; Dick, Jonathan; Roth, Elijah; Zalewski, Nicole; Veldhuizen, Christopher; Coeler, Joel

    2015-01-01

    In this laboratory experiment, lower- and upper-division students dissolved bismuth subsalicylate tablets in acid and precipitated the resultant Bi[superscript 3+] in solution with sodium phosphate for a gravimetric determination of bismuth subsalicylate in the tablets. With a labeled concentration of 262 mg/tablet, the combined data from three…

  9. Magnetic properties of single crystals of bismuth telluride doped with 0.2 at% lead and its thermoelectric power

    International Nuclear Information System (INIS)

    Biswas, S.; Bhattacharya, R.

    1990-01-01

    At temperatures above 200 K the diamagnetic susceptibility of Bi 2 Te 3 doped with 0.2 at% Pb decreases with rising temperature which cannot be accounted for by the change in the diamagnetic contribution of the free carriers present in the substance. It is shown that this decrease can be accounted for if χ L (diamagnetic contribution of core and valence electrons) decreases with temperature. The thermoelectric power is measured to determine the effective mass of carriers. (author)

  10. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  11. Short report: evaluation of Helicobacter pylori eradication with bismuth sucralfate

    NARCIS (Netherlands)

    Reijers, M. H.; Noach, L. A.; Tytgat, G. N.

    1994-01-01

    In a pilot study we have evaluated the clinical efficacy of bismuth sucralfate to eradicate H. pylori. Ten consecutive patients with chronic dyspepsia and H. pylori associated gastritis were treated with bismuth sucralfate (220 mg bismuth per tablet, 4 tablets per day for 4 weeks). If a 14C urea

  12. Electrical properties of cadmium telluride films doped with antimony

    International Nuclear Information System (INIS)

    Atdaev, B.S.; Garyagdyev, G.; Grin', V.F.; Noskov, A.I.

    1989-01-01

    Effect of cadmium telluride doping with antimony on electric and photoelectric properties is investigated. Temperature dependence of dark (σ d ) and photoconductivity (σ p ) during excitation from the range of proper absorption in the temperature range 77-300 K and spectral distribution of photoconductivity at 300 K are investigated. It is shown that in the process of doping antimony diffusses intensively over CdTe grain boundaries, decreasing potential barriers between them and due to diffusion into CdTe grains it changes their electrical properties. The acceptor character of antimony impurity can be caused by antimony diffusion into tellurium sublattice owing to proximity of their ionic and covalent radii

  13. XAFS studies of nickel-doped lead telluride

    International Nuclear Information System (INIS)

    Radisavljevic, Ivana; Novakovic, Nikola; Ivanovic, Nenad; Romcevic, Nebojsa; Manasijevic, Miodrag; Mahnke, Heinz-Eberhard

    2009-01-01

    The problem of impurities and defect states in lead telluride-based semiconductors is of crucial importance for their practical applications. X-ray absorption fine structure (XAFS) techniques are capable to address some of the key issues regarding impurities position, their valent state, as well as the local structural changes of the host lattice in the immediate surrounding of the impurity atoms. In this paper we present the results of the Ni K-absorption edge XAFS studies of Ni-doped PbTe at different temperatures. Analysis of near edge and extended XAFS regions of the measured spectra provided information about exact local environment and lattice ordering around Ni atoms.

  14. Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)

    2014-07-15

    In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Nanowire Photovoltaic Devices

    Science.gov (United States)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  16. Functionalised Silver Nanowire Structures

    International Nuclear Information System (INIS)

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  17. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

  18. Bismuth titanate nanorods and their visible light photocatalytic properties

    International Nuclear Information System (INIS)

    Pei, L.Z.; Liu, H.D.; Lin, N.; Yu, H.Y.

    2015-01-01

    Highlights: • Bismuth titanate nanorods have been synthesized by a simple hydrothermal process. • The size of bismuth titanate nanorods can be controlled by growth conditions. • Bismuth titanate nanorods show good photocatalytic activities of methylene blue and Rhodamine B. - Abstract: Bismuth titanate nanorods have been prepared using a facile hydrothermal process without additives. The bismuth titanate products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and UV-vis diffusion reflectance spectrum. XRD pattern shows that the bismuth titanate nanorods are composed of cubic Bi 2 Ti 2 O 7 phase. Electron microscopy images show that the length and diameter of the bismuth titanate nanorods are 50-200 nm and 2 μm, respectively. Hydrothermal temperature and reaction time play important roles on the formation and size of the bismuth titanate nanorods. UV-vis diffusion reflectance spectrum indicates that bismuth titanate nanorods have a band gap of 2.58 eV. The bismuth titanate nanorods exhibit good photocatalytic activities in the photocatalytic degradation of methylene blue (MB) and Rhodamine B (RB) under visible light irradiation. The bismuth titanate nanorods with cubic Bi 2 Ti 2 O 7 phase are a promising candidate as a visible light photocatalyst

  19. Application of cadmium telluride detectors to high energy computed tomography

    International Nuclear Information System (INIS)

    Glasser, F.; Thomas, G.; Cuzin, M.; Verger, L.

    1991-01-01

    15 years ago, Cadmium Telluride detectors have been investigated in our laboratory as possible detectors for medical scanners [1]. Today most of these machines are using high pressure Xenon gas as multicells detectors, BGO or CdWO 4 scintillators for industrial computerized tomography. Xenon gas detectors are well suited for detection of 100 KeV X-rays and enables to build 1000 cells homogeneous detector with a dynamic range of 3 decades. BGO and CdWO 4 scintillators, associated with photomultipliers or photodiodes are used for higher energy (400 KeV). They present a low afterglow and a dynamic range of 4 to 5 decades. Non destructive testing of very absorbing objects (eg 2 m diameter solid rocket motor) by X-ray tomography requires much higher energy X-rays (16 MeV) and doses up to 12000 rads/min at 1 meter. For this application Cadmium Telluride detectors operating as photoconductors are well suited. A prototype of tomograph machine, able to scan 0.5 m diameter high density objects has been realized with 25 CdTe detectors (25x15x0.8 mm 3 ). It produces good quality 1024x1024 tomographic images

  20. Kelvin probe studies of cesium telluride photocathode for AWA photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Wisniewski, Eric E., E-mail: ewisniew@anl.gov [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Velazquez, Daniel [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Yusof, Zikri, E-mail: zyusof@hawk.iit.edu [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Spentzouris, Linda; Terry, Jeff [Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Sarkar, Tapash J. [Rice University, 6100 Main, Houston, TX 77005 (United States); Harkay, Katherine [Accelerator Science Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States)

    2013-05-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (≈50nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating. -- Highlights: ► The correlation between Quantum Efficiency (QE) and work function. ► How QE and work function evolve together. ► Rejuvenation of the photocathode via heating and the effect on work function. ► The effects on the work function due to exposure to UV light.

  1. Bismuth Subgallate Toxicity in the Age of Online Supplement Use.

    Science.gov (United States)

    Sampognaro, Paul; Vo, Kathy T; Richie, Megan; Blanc, Paul D; Keenan, Kevin

    2017-11-01

    Bismuth salts have been used to treat gastroenterological disorders and are readily available over-the-counter and via the internet. Even though generally considered safe, bismuth compounds can cause a syndrome of subacute, progressive encephalopathy when taken in large quantities. We present the case of woman who developed progressive encephalopathy, aphasia, myoclonus, and gait instability after chronically ingesting large amounts of bismuth subgallate purchased from a major online marketing website to control symptoms of irritable bowel syndrome. After extensive neurological work-up, elevated bismuth levels in her blood, urine, and cerebrospinal fluid confirmed the diagnosis of bismuth-related neurotoxicity. She improved slowly following cessation of exposure. This case highlights bismuth subgallate as a neurotoxic bismuth formulation and reminds providers of the potential for safety misconceptions of positively reviewed online supplements.

  2. Radio-sensitization of animals by bismuth; Radio sensibilisation de l'animal par le bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Pierotti, T; Verain, A [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1969-07-01

    Digestive absorption of bismuth by animals leads to radio-sensitization. This effect is very marked when the X-rays used are centered on the absorption line of bismuth. This work has involved the use of more than 2000 C3H/JAX mice, and has shown that a maximum lethal effect, with respect to the standard, occurs for bismuth sub-nitrate doses of the order of 3 g/kg and for exposures of 700 R. For stronger or weaker doses, the sensitization effect is less marked. (authors) [French] L'absorption digestive de bismuth provoque une radiosensibilisation de l'animal. Celle-ci est nette quand le rayonnement X utilise est centre sur la raie d'absorption du bismuth. L'etude portant sur plus de 2000 souris C3H/JAX a montre une lethalite maximale par rapport aux temoins pour des doses de sous-nitrate de bismuth de l'ordre de 3 g/kg et pour des expositions de 700 R. Pour des doses plus fortes ou plus faibles, l'effet de sensibilisation est moins net. (auteurs)

  3. 21 CFR 73.2110 - Bismuth citrate.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth citrate. 73.2110 Section 73.2110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... paragraph (c)(1), effective April 27, 2010. For the convenience of the user, the revised text is set forth...

  4. Magnetoreflection studies of ion implanted bismuth

    International Nuclear Information System (INIS)

    Nicolini, C.; Chieu, T.C.; Dresselhaus, M.S.; Massachusetts Inst. of Tech., Cambridge; Dresselhaus, G.

    1982-01-01

    The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite to those observed for Bi chemically doped with Sb. (author)

  5. Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

    Science.gov (United States)

    Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

    2015-12-01

    Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

  6. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  7. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  8. Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

    Directory of Open Access Journals (Sweden)

    Rudnik E.

    2015-04-01

    Full Text Available Electrochemistry of lead telluride stationary electrode was studied in nitric acid solutions of pH 1.5-3.0. E-pH diagram for Pb-Te-H2O system was calculated. Results of cyclic voltammetry of Pb, Te and PbTe were discussed in correlation with thermodynamic predictions. Anodic dissolution of PbTe electrode at potential approx. -100÷50 mV (SCE resulted in tellurium formation, while above 300 mV TeO2 was mainly produced. The latter could dissolve to HTeO+2 under acidic electrolyte, but it was inhibited by increased pH of the bath.

  9. Effect of thallium impurity on hole scattering in lead telluride

    International Nuclear Information System (INIS)

    Kajdanov, V.I.; Nemov, S.A.

    1981-01-01

    Hole mobility in PbTe monocrystalline specimens in the temperature range from 4.2 to 300 K has been investigated. Detected is a sharp increase in scattering cross section of light and heavy holes in the specimens having the Hall hole concentration p approximately (5+-9)x10 19 cm -3 explained by resonant scattering into a band of quasilocal states of thallium located lower than the ceiling of heavy carrier zone by 0.01+-0.01 eV. Very large differences in resonant scattering of current carriers into the quasilocal states of In and Tl in PbTe result from the inertial polarizability of a crystal. The same mechanism is used to explain long-lived relaxation of zone electron concentration in lead telluride and Pbsub(1-x)Snsub(x)Te doped with indium [ru

  10. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  11. Megapixel mercury cadmium telluride focal plane arrays for infrared imaging out to 12 microns, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the fabrication of large format, long wave infrared (LWIR) mercury cadmium telluride (HgCdTe or MCT) detector arrays where the cutoff wavelength is...

  12. Nanotubes and nanowires

    Indian Academy of Sciences (India)

    Unknown

    junction nanotubes by the pyrolysis of appropriate organic precursors. ... By making use of carbon nanotubes, nanowires of metals, metal ..... The use of activated carbon in place of ..... required for the complete removal of the carbon template.

  13. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  14. BiOCl nanowire with hierarchical structure and its Raman features

    International Nuclear Information System (INIS)

    Tian Ye; Guo Chuanfei; Guo Yanjun; Wang Qi; Liu Qian

    2012-01-01

    BiOCl is a promising V-VI-VII-compound semiconductor with excellent optical and electrical properties, and has great potential applications in photo-catalysis, photoelectric, etc. We successfully synthesize BiOCl nanowire with a hierarchical structure by combining wet etch (top-down) with liquid phase crystal growth (bottom-up) process, opening a novel method to construct ordered bismuth-based nanostructures. The morphology and lattice structures of Bi nanowires, β-Bi 2 O 3 nanowires and BiOCl nanowires with the hierarchical structure are investigated by scanning electron microscope (SEM) and transition electron microscope (TEM). The formation mechanism of such ordered BiOCl hierarchical structure is considered to mainly originate from the highly preferred growth, which is governed by the lattice match between (1 1 0) facet of BiOCl and (2 2 0) or (0 0 2) facet of β-Bi 2 O 3 . A schematic model is also illustrated to depict the formation process of the ordered BiOCl hierarchical structure. In addition, Raman properties of the BiOCl nanowire with the hierarchical structure are investigated deeply.

  15. Bismuth( Ⅲ ) Salts: Green Catalysts for Organic Transformations

    Institute of Scientific and Technical Information of China (English)

    C. Le Roux

    2005-01-01

    @@ 1Introduction Bismuth, the heaviest stable element in the periodic table, stands out from other heavy elements (such as mercury, thallium and lead) due to its relatively non-toxic character which confers on bismuth the enviable status of being an eco-friendly element. Therefore, bismuth and its compounds hold considerable promise as useful catalysts for green chemistry. The research presented in this communication is devoted to the applications of bismuth( Ⅲ ) salts as catalysts for organic transformations.After some general comments about bismuth and a short presentation of the various applications of bismuth( Ⅲ ) salts in organic synthesis, this communication will focus on the works done in our research group during the last several years which deals mainly with electrophilic substitutions. When appropriate, some mechanistic details will be given.

  16. Thermal decomposition synthesis of nanorods bismuth sulphide from bismuth N-ethyl cyclohexyl dithiocarbamate complex

    International Nuclear Information System (INIS)

    Abdullah, Nurul Hidayah; Zainal, Zulkarnain; Silong, Sidik; Tahir, Mohamed Ibrahim Mohamed; Tan, Kar-Ban; Chang, Sook-Keng

    2016-01-01

    Highlights: • Bismuth N-ethyl cyclohexyl dithiocarbamate was used as single source precursor. • No surfactant was used in the preparation of Bi_2S_3 nanorods. • Pure phase orthorhombic Bi_2S_3 is obtained. • Bismuth sulphide with an average atomic ratio of Bi:S close to 2:3 is obtained. - Abstract: Nanorods of bismuth sulphide were prepared by thermal decomposition of bismuth N-ethyl cyclohexyl dithiocarbamate at different calcination duration. X-ray diffraction (XRD) analysis shows that at 400 °C, the precursor was fully decomposed to orthorhombic bismuth sulphide after 2 h of calcination. Besides, calcination duration does not affect the existence of Bi_2S_3 phase. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analyses reveal that Bi_2S_3 nanorods with an average width ranging from 29–36 nm were obtained. Energy dispersive X-ray (EDX) analysis confirmed the atomic ratio of Bi and S close to 2:3, giving a possible composition of Bi_2S_3. Direct band gap energy of Bi_2S_3 decreases from 1.83 eV to 1.54 eV as calcination time increases.

  17. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jurgen

    2013-12-19

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  18. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda

    2013-01-01

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  19. Nanowire structures and electrical devices

    Science.gov (United States)

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  20. "Chemical contraction" in rubidium-bismuth melts

    Science.gov (United States)

    Khairulin, R. A.; Abdullaev, R. N.; Stankus, S. V.

    2017-10-01

    The density and thermal expansion of liquid rubidium and rubidium-bismuth alloy containing 25.0 at % Bi were measured by the gamma-ray attenuation technique at temperatures from liquidus to 1000 K. The results of this study were compared with the data obtained by other authors. The molar volume of the Rb75Bi25 melt strongly deviates from the additivity rule for ideal solutions.

  1. Electrocatalytic activity of bismuth doped silver electrodes

    CERN Document Server

    Amjad, M

    2002-01-01

    Investigation of redox reactions on silver, and bismuth doped silver electrodes in aqueous KOH solutions, by using potentiostatic steady-state polarization technique, has been carried out. The redox wave potential and current displacements along with multiplicity of the latter have been examined. These electrodes were employed for the oxidation of organic molecules such as ethylamine in alkaline media. Subsequently, these electrodes were ranked with respect to their activity for the redox reactions. (author)

  2. Flame spray synthesis under a non-oxidizing atmosphere: Preparation of metallic bismuth nanoparticles and nanocrystalline bulk bismuth metal

    Energy Technology Data Exchange (ETDEWEB)

    Grass, Robert N.; Stark, Wendelin J. [Institute for Chemical and Bioengineering, ETH Zuerich (Switzerland)], E-mail: wendelin.stark@chem.ethz.ch

    2006-10-15

    Metallic bismuth nanoparticles of over 98% purity were prepared by a modified flame spray synthesis method in an inert atmosphere by oxygen-deficient combustion of a bismuth-carboxylate based precursor. The samples were characterized by X-ray diffraction, thermal analysis and scanning electron microscopy confirming the formation of pure, crystalline metallic bismuth nanoparticles. Compression of the as-prepared powder resulted in highly dense, nanocrystalline pills with strong electrical conductivity and bright metallic gloss.

  3. Effect of excess bismuth on the dielectric and piezoelectric properties of strontium bismuth niobate ceramics

    International Nuclear Information System (INIS)

    Verma, Maya; Tanwar, Amit; Sreenivas, K.

    2013-01-01

    Excess Bismuth Strontium Bismuth Niobate (Sr 2 Bi 2 Nb 2 O 9 + x wt% Bi 2 O 3 ) ceramics were prepared using conventional solid state reaction method by varying x in the range (x=0%wt - 20%wt). X-ray diffraction studies reveal no significant shift in the peak positions as the Bi content increases from 0.0 to 5%wt. However, at a higher content of Bi beyond x = 5wt% secondary phases relating to Bi 2 O 3 are identified. The c-axis orientation is found to be minimum for SBN ceramic prepared with 5% excess bismuth whereas with further increase in excess Bi 2 O 3 addition during processing, SBN ceramics show a much stronger c-axis orientation. Room temperature dielectric constant measured at 100 KHz is found to increase from 117 to 130 with increase in Bi content from x = 0 to 10wt% suggesting Bi addition has make up for the bismuth losses at higher sintering temperature (1200℃), however with further increase in Bi content (x > 10wt%), the dielectric constant decreases, and could be due to the increased probability of segregation of Bi on the grains of SBN ceramics. The improvement in ferroelectric properties were obtained when the bismuth excess is increased from 0% to 5%. It may be observed that on increasing the excess bismuth to 5%, the transition temperature increases from 424 to 450℃, while further increasing to 10%, transition becomes slightly diffused and phase transition temperature gets decreased to 398℃, which may be due to the formation of secondary phase. 5% excess Bi is found to enhance the dielectric and ferroelectricity properties, and any further increase of Bi in excess (>10%) during processing is found to degrade the electrical and functional properties of SBN. (author)

  4. Synthesis and properties of silicon nanowire devices

    Science.gov (United States)

    Byon, Kumhyo

    Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed

  5. Effectiveness of ranitidine bismuth citrate and proton pump inhibitor ...

    African Journals Online (AJOL)

    Effectiveness of ranitidine bismuth citrate and proton pump inhibitor based triple therapies of Helicobacter pylori in Turkey. ... Results: When we look at the eradication rates of the treatment groups, only two groups (ranitidine bismuth citrate and rabeprazole groups) had eradication rates greater than 80%, both at intention to ...

  6. Heat capacity, enthalpy and entropy of bismuth niobate and bismuth tantalate

    Czech Academy of Sciences Publication Activity Database

    Hampl, M.; Strejc, A.; Sedmidubský, D.; Růžička, K.; Hejtmánek, Jiří; Leitner, J.

    2006-01-01

    Roč. 179, - (2006), s. 77-80 ISSN 0022-4596 Institutional research plan: CEZ:AV0Z10100521 Keywords : heat capacity * heat of formation * heat content * bismuth perovskite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.107, year: 2006

  7. Heat-Pipe Bismuth Laser; Examination of Laser Action at 4722A in Bismuth Vapor

    Science.gov (United States)

    1976-11-01

    11, 15(1975). of Type 6p 3 -6p 2 7s in the Bismuth Atomic Spectrum in Intermediate Coupling," Acta Physica Polonica A47, 231(1975). 19. A.N. Nesmeyanov...Calculated Transit n Probabilities and Lifetimes for the First Excited Configuration np (n+l)s in the Neutral As, Sb and Bi Atoms, " Physica Scripta

  8. A cadmium-zinc-telluride crystal array spectrometer

    International Nuclear Information System (INIS)

    McHugh, H. R.; Quam, W.; DeVore, T.; Vogle, R.; Weslowski, J.

    2003-01-01

    This paper describes a gamma detector employing an array of eight cadmium-zinc-telluride (CZT) crystals configured as a high resolution gamma ray spectrometer. This detector is part of a more complex instrument that identifies the isotope,displays this information, and records the gamma spectrum. Various alarms and other operator features are incorporated in this battery operated rugged instrument. The CZT detector is the key component of this instrument and will be described in detail in this paper. We have made extensive spectral measurements of the usual laboratory gamma sources, common medical isotopes, and various Special Nuclear Materials (SNM) with this detector. Some of these data will be presented as spectra. We will also present energy resolution and detection efficiency for the basic 8-crystal array. Additional data will also be presented for a 32-crystal array. The basic 8-crystal array development was completed two years ago, and the system electronic design has been imp roved recently. This has resulted in significantly improved noise performance. We expect to have a much smaller detector package, using 8 crystals, in a few months. This package will use flip-chip packaging to reduce the electronics physical size by a factor of 5

  9. Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors

    International Nuclear Information System (INIS)

    Lavietes, A.D.; McQuaid, J.H.; Paulus, T.J.

    1995-01-01

    Lawrence Livermore National Laboratory (LLNL) and EG ampersand G ORTEC have jointly developed a portable ambient-temperature detection system that can be used in a number of application scenarios. The detection system uses a planar cadmium zinc telluride (CZT) detector with custom-designed detector support electronics developed at LLNL and is based on the recently released MicroNOMAD multichannel analyzer (MCA) produced by ORTEC. Spectral analysis is performed using software developed at LLNL that was originally designed for use with high-purity germanium (HPGe) detector systems. In one application, the CZT detection system determines uranium enrichments ranging from less than 3% to over 75% to within accuracies of 20%. The analysis was performed using sample sizes of 200 g or larger and acquisition times of 30 min. The authors have demonstrated the capabilities of this system by analyzing the spectra gathered by the CZT detection system from uranium sources of several enrichments. These experiments demonstrate that current CZT detectors can, in some cases, approach performance criteria that were previously the exclusive domain of larger HPGe detector systems

  10. Cadmium zinc telluride as a mid-infrared variable retarder

    Science.gov (United States)

    FitzGerald, William; Taherion, Saeid; Kumar, F. Joseph; Giles, David; Hore, Dennis

    2018-04-01

    The electro-optic behavior of cadmium zinc telluride is examined in the mid-infrared region between 3 and 11 μm, for applied DC field strengths of up to 106 V/m. The measurements performed here include full characterization of the polarization state of the transmitted light by means of the Stokes vector. We demonstrate the suitability of this material for DC variable retarder applications such as those achieved by quarter- or half-wave retardation. A comparison of two different metallic coatings for electrodes, gold and indium, reveals important differences in performance that are attributed to the homogeneity of the field through the bulk of the crystal. We illustrate that, in the case of both metals, the same electro-optic coefficients are measured, but regions of higher and lower retardation result in significant depolarization in the case of gold. Such depolarization may adversely affect the contrast ratio in a light valve, or increase the voltage necessary for the operation of an arbitrary polarization state generator.

  11. Niobium and zirconium telluride thin films prepared by sputtering

    International Nuclear Information System (INIS)

    Kassem, M.; Pailharey, D.; Mathey, Y.

    2000-01-01

    A versatile procedure of sputter deposition, well adapted for getting a large of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium poly tellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe 0 .72 to ZrTe 6 .7, on the one hand, and from NbTe 1 .28 to NbTe 7 .84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk Mte x reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable of Te and M atoms trapped or intercalated within the parent structures. (author)

  12. Precision timing detectors with cadmium-telluride sensor

    Science.gov (United States)

    Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

    2017-09-01

    Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

  13. Selective and low temperature transition metal intercalation in layered tellurides

    Science.gov (United States)

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  14. Development of a cadmium telluride pixel detector for astrophysical applications

    Science.gov (United States)

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  15. Bismuth X-ray absorber studies for TES microcalorimeters

    International Nuclear Information System (INIS)

    Sadleir, J.E.; Bandler, S.R.; Brekosky, R.P.; Chervenak, J.; Figueroa-Feliciano, E.; Finkbeiner, F.; Iyomoto, N.; Kelley, R.L.; Kilbourne, C.A.; King, J.M.; Porter, F.S.; Robinson, I.K.; Saab, T.; Talley, D.J.

    2006-01-01

    Bismuth's large atomic number and low carrier density makes it an attractive X-ray absorber material for microcalorimeters. Bismuth's long Fermi wavelength and long mean free paths have motivated much interest in the fabrication of high quality bismuth films to study quantum size effects. Despite such incentives, fabrication of high quality bismuth films has proven difficult, and measured properties of such films are highly variable in the literature. Implementing a bismuth deposition process for TES (superconducting Transition Edge Sensor) device fabrication presents additional challenges particularly at interfaces due to the inherent granularity and surface roughness of its films, its low melting point, and its tendency to diffuse and form undesired intermetallic phases. We report observations of Bi-Cu and Bi-Au diffusion in our devices correlating with large shifts in T c (superconducting transition temperature). Using SEM and in situ R vs T annealing experiments we have been able to study these diffusion processes and identify their activation temperatures

  16. Bismuth-Based Quadruple Therapy with Bismuth Subcitrate, Metronidazole, Tetracycline and Omeprazole in the Eradication of Helicobacter pylori

    Directory of Open Access Journals (Sweden)

    Raymond Lahaie

    2001-01-01

    Full Text Available BACKGROUND: A previous study showed that 14 days of qid bismuth-based triple therapy with tetracycline 500 mg, metronidazole 250 mg and colloidal bismuth subcitrate 120 mg resulted in excellent Helicobacter pylori eradication rates (89.5%. The present study looked at a shorter treatment period by adding omeprazole and by reducing the dose of tetracycline.

  17. EDITORIAL: Nanowires for energy Nanowires for energy

    Science.gov (United States)

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  18. An evaluated neutronic data file for bismuth

    International Nuclear Information System (INIS)

    Guenther, P.T.; Lawson, R.D.; Meadows, J.W.; Smith, A.B.; Smith, D.L.; Sugimoto, M.; Howerton, R.J.

    1989-11-01

    A comprehensive evaluated neutronic data file for bismuth, extending from 10 -5 eV to 20.0 MeV, is described. The experimental database, the application of the theoretical models, and the evaluation rationale are outlined. Attention is given to uncertainty specification, and comparisons are made with the prior ENDF/B-V evaluation. The corresponding numerical file, in ENDF/B-VI format, has been transmitted to the National Nuclear Data Center, Brookhaven National Laboratory. 106 refs., 10 figs., 6 tabs

  19. Optical Properties of Bismuth Tellurite Based Glass

    Directory of Open Access Journals (Sweden)

    Hooi Ming Oo

    2012-04-01

    Full Text Available A series of binary tellurite based glasses (Bi2O3x (TeO2100−x was prepared by melt quenching method. The density, molar volume and refractive index increase when bismuth ions Bi3+ increase, this is due to the increased polarization of the ions Bi3+ and the enhanced formation of non-bridging oxygen (NBO. The Fourier transform infrared spectroscopy (FTIR results show the bonding of the glass sample and the optical band gap, Eopt decreases while the refractive index increases when the ion Bi3+ content increases.

  20. Optical Properties of Bismuth Tellurite Based Glass

    Science.gov (United States)

    Oo, Hooi Ming; Mohamed-Kamari, Halimah; Wan-Yusoff, Wan Mohd Daud

    2012-01-01

    A series of binary tellurite based glasses (Bi2O3)x (TeO2)100−x was prepared by melt quenching method. The density, molar volume and refractive index increase when bismuth ions Bi3+ increase, this is due to the increased polarization of the ions Bi3+ and the enhanced formation of non-bridging oxygen (NBO). The Fourier transform infrared spectroscopy (FTIR) results show the bonding of the glass sample and the optical band gap, Eopt decreases while the refractive index increases when the ion Bi3+ content increases. PMID:22605999

  1. Special features of self-compensation of halogen donor action in lead telluride

    International Nuclear Information System (INIS)

    Kajdanov, V.I.; Nemov, S.A.; Ravich, Yu.I.; Dereza, A.Yu.

    1985-01-01

    Specific features of self-compensation of halogen donor action in lead telluride are investigasted. Lead telluride samples with chlorine additions (with tellurium excess) and, besides, with bromine- and iodine additions were studied in order to reveal general regularities in alloyind with all halogen donor impurities. Experimental dependences of the difference between the electron and hole concentrations (n-p) in PbTe as a function of an amount of introduced halogen impurities (Ni) are presented for samples with a maximum compensation at 295 K. General features of the n-p=f(Ni) dependence are presented for all halogens. The hypothesis on the kinetic mechanism of increasing the efficiency of self-compensation of halogen donor action in lead telluride is suggested

  2. Process for obtaining oxygen doped zinc telluride monocrystals and scintillator crystals obtained by this process

    International Nuclear Information System (INIS)

    Schneider, Maurice; Moreau, Roland; D'Haenen, J.-P.; Merenda, Pierre.

    1976-01-01

    A process is described for obtaining oxygen doped zinc telluride monocrystals, for use as scintillator crystals for ionising radiation detectors. The following operations are carried out in succession: one or several zinc telluride crystals are introduced into a silica ampoule together with a ternary mixture of zinc tellurium and oxygen, as an oxide or hydroxide of these elements; the ampoule is pumped down to a high vacuum and sealed; the sealed ampoule containing the mixture and monocrystals is placed in a kiln and brought to a uniform temperature sufficient to make the mixture three-phased, depending on its composition; the zinc telluride crystalline compound remains solid; the ampoule is then tempered to bring it quickly back to ambient temperature [fr

  3. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  4. Coating compositions comprising bismuth-alloyed zinc

    DEFF Research Database (Denmark)

    2008-01-01

    The present application discloses (i) a coating composition comprising a particulate zinc-based alloyed material, said material comprising 0.05-0.7% by weight of bismuth (Bi), the D50 of the particulate material being in the range of 2.5-30 µm; (ii) a coated structure comprising a metal structure...... having a first coating of the zinc-containing coating composition applied onto at least a part of the metal structure in a dry film thickness of 5-100 µm; and an outer coating applied onto said zinc-containing coating in a dry film thickness of 30-200 µm; (iii) a particulate zinc-based alloyed material......, wherein the material comprises 0.05-0.7%(w/w) of bismuth (Bi), and wherein the D50 of the particulate material is in the range of 2.5-30 µm; (iv) a composite powder consisting of at least 25%(w/w) of the particulate zinc-based alloyed material, the rest being a particulate material consisting of zinc...

  5. Liquid Lead-Bismuth Materials Test Loop

    International Nuclear Information System (INIS)

    Tcharnotskaia, Valentina; Ammerman, Curtt; Darling, Timothy; King, Joe; Li, Ning; Shaw, Don; Snodgrass, Leon; Woloshun, Keith

    2002-01-01

    We designed and built the Liquid Lead-Bismuth Materials Test Loop (MTL) to study the materials behavior in a flow of molten lead-bismuth eutectic (LBE). In this paper we present a description of the loop with main components and their functions. Stress distribution in the piping due to sustained, occasional and expansion loads is shown. The loop is designed so that a difference of 100 deg. C can be attained between the coldest and the hottest parts at a nominal flow rate of 8.84 GPM. Liquid LBE flow can be activated by a mechanical sump pump or by natural convection. In order to maintain a self-healing protective film on the surface of the stainless steel pipe, a certain concentration of oxygen has to be maintained in the liquid metal. We developed oxygen sensors and an oxygen control system to be implemented in the loop. The loop is outfitted with a variety of instruments that are controlled from a computer based data acquisition system. Initial experiments include preconditioning the loop, filling it up with LBE, running at uniform temperature and tuning the oxygen control system. We will present some preliminary results and discuss plans for the future tests. (authors)

  6. What is the structure of liquid Bismuth?

    International Nuclear Information System (INIS)

    Caspi, El'ad N; Greenberg, Yaron; Yahel, Eyal; Beuneu, Brigitte; Makov, Guy

    2012-01-01

    The structure of liquid Bismuth is probably the best-studied among elemental liquid metals because of a combination of the interesting physical properties of Bismuth and its excellent neutron scattering properties. Over the last six decades there have been more than 10 independent studies of the structure of liquid Bi, near the melting temperature. This remarkable number of measurements provides an opportunity to compare these results and to analyze the different sources of error contributing to the calculated pair distribution function. In the present contribution we analyze possible sources of error by varying the analysis procedure for a given measurement. By repeating a previous measurement in a new experimental configuration we demonstrate that an invariant (i.e. up to an absolute error) structure factor can be obtained. Transforming the structure factor into the radial distribution introduces new sources of error which causes the scatter to be greater than that required to resolve issues such as the existence of liquid-liquid phase transitions in Bi and to obtain correlation between thermo-physical properties and structure. We consider the contribution of different parameters when transforming the structure factor to the radial distribution function.

  7. Study of point defects in bismuth

    International Nuclear Information System (INIS)

    Bois, P.

    1987-03-01

    Single crystalline samples of bismuth, pure and n or p - doped by adding tellurium or tin, were electron irradiated at low temperature (4.2 K and 20 K). In the energy range 0.7 - 2.5 MeV, a displacement threshold energy of 13 eV and an athermal recombination volume of 150 atomic volumes were determined. Joint measurements of resistivity, magnetotransport and positron annihilation enabled to precised the nature of the annealing stages: 40-50 K, free migration of interstitials; 90-120 K long range migration of vacancy. Point defects have according to their nature a different effect on the electronic properties of bismuth: isolated Frenkel pairs are globally donnors with a charge of + 0.16 e- and the vacancy is donnor, which seems to attribute to it a negative formation volume. A simple model with non-deformating bands is no longer sufficient to explain the behaviour under irradiation: one has to take into account an acceptor level with a charge of - 0,27 e-, linked to the cascade-type defects and resonating with the valence band. It's position in the band overlap and it's width (8 meV) could be precised. In first approximation this coupling with less mobile carriers does not affect the simple additive rule which exists for relaxation times. Some yet obscure magnetic properties seem to be linked to this defect level [fr

  8. Development of lead-bismuth coolant technology for nuclear device

    International Nuclear Information System (INIS)

    Kamata, Kin-ya; Kitano, Teruaki; Ono, Mikinori

    2004-01-01

    Liquid lead-bismuth is a promising material as a future fast reactor coolant or an intensive neutron source material for accelerator driven transmutation system (ADS). To develop nuclear plants and their installations using lead-bismuth coolant for practical use, both coolant technologies, inhabitation process of steels and quality control of coolant, and total operation system for liquid lead-bismuth plants are required. Based on the experience of liquid metal coolant, Mitsui Engineering and Shipbuilding Co., Ltd. (MES) has completed the liquid lead-bismuth forced circulation loop and has acquired various engineering data on main components including economizer. As a result of tis operation, MES has developed key technologies of lead-bismuth coolant such as controlling of oxygen content in lead-bismuth and a purification of lead-bismuth coolant. MES participated in the national project, ''The Development of Accelerator Driven Transmutation System'', together with JAERI (Japan Atomic Energy Research Institute) and started corrosion test for beam window of ADS. (author)

  9. Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide

    International Nuclear Information System (INIS)

    Danilova, M.G.; Sveshnikova, L.L.; Stavitskaya, T.A.; Repinskij, S.M.

    1991-01-01

    Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide was investigated. Dependences of change of PbTe dissolution rate on concentration of hydrogen peroxide and alkali in the solution were obtained. It is shown that dissolution rate of lead telluride is affected by dissolution rate of lead oxide, representing the product of ReTe dissolution. The obtained regularities can be explained by change of solution structure with increase of KOH concentration and by the state of hydrogen peroxide in the solution

  10. Simulation of core-level binding energy shifts in germanium-doped lead telluride crystals

    International Nuclear Information System (INIS)

    Zyubin, A.S.; Dedyulin, S.N.; Yashina, L.V.; Shtanov, V.I.

    2007-01-01

    To simulate the changes in core-level binding energies in germanium-doped lead telluride, cluster calculations of the changes in the electrostatic potential at the corresponding centers have been performed. Different locations of the Ge atom in the crystal bulk have been considered: near vacancies, near another dopant site, and near the surface. For calculating the potential in the clusters that model the bulk and the surface of the lead telluride crystal (c-PbTe), the electron density obtained in the framework of the Hartree-Fock and hybrid density functional theory (DFT) methods has been used [ru

  11. Ultrasonic investigations of some bismuth borate glasses doped with ...

    Indian Academy of Sciences (India)

    Keywords. Bismuth borate glasses; elastic moduli; Makishima–Mackenzie model. 1. Introduction ... former because of the small field strength of Bi3+ ion. Bi2O3 ..... Typically, when the material undergoes a phase change, the value of the.

  12. Studies on bismuth carboxylates—synthesis and characterization of ...

    Indian Academy of Sciences (India)

    crystalline modification (4 ) of the previously reported coordination polymer, bismuth tris(picolinate), [Bi(2– .... no significant change in the IR spectrum or the melting behaviour between 4 .... lens et al.7 There are moderate differences in the.

  13. Processing and Characterization of Thin Cadmium Telluride Solar Cells

    Science.gov (United States)

    Wojtowicz, Anna

    Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated

  14. Synthesis and characterization of superconducting bismuthates

    International Nuclear Information System (INIS)

    Tang, Horngyi.

    1991-01-01

    A new electrosynthetic technique for low-temperature crystal growth of superconducting bismuthates was developed, and its utility demonstrated by growing various high-quality BiO 3 crystals. The crystals of Ba 1-x K x BiO 3 and Ba 1-x Rb x BiO 3 display their T c onset at 31.8k and 28k, respectively, using SQUID magnetometry. The structure of a KBiO 3 x H 2 O single crystal determined by single crystal x-ray diffraction confirms previous results from powder samples that it is isostructural with KSbO 3 . The crystals of Ba 1-x Cs x BiO 3 do not show superconductivity to 4k. Chemical vapor-transport experiments leading to the fabrication of MoS 2 /WSe 2 junctions were also performed and are described in detail

  15. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    Directory of Open Access Journals (Sweden)

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  16. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives

    International Nuclear Information System (INIS)

    Zweibel, K.; Moskowitz, P.; Fthenakis, V.

    1998-02-01

    Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers

  17. Flotation atomic absorption determination of bismuth in nonferrous metal alloys

    International Nuclear Information System (INIS)

    Ososkov, V.K.; Plintus, A.M.; Kornelli, M.Eh.; Zakhariya, A.N.; Lozanova, E.V.

    1986-01-01

    Technique of flotation concentration and atomic absorption determination of bismuth microquantities in alloys on the basis of copper and zinc has been developed. Fine-dispersed EhDEh-10P anionite was used as a carrier in flotation concentration. State standard samples (SSS) of brasses and German silver were used as analysed objects. Effect of macrocomponents on the results of bismuth content determination has been studied. Satisfactory coincidence of the results obtained and SSS certificates is shown

  18. Platinum-Bismuth Bimetallic Catalysts: Synthesis, Characterization and Applications

    OpenAIRE

    Saucedo, Jose A, Jr; Xiao, Yang; Varma, Arvind

    2015-01-01

    Bimetallic catalysts have been explored and shown to exhibit unique characteristics which are not present in monometallic catalysts. Platinum is well known as an effective catalyst for oxidation and reduction reactions, and it can be made more effective when bismuth is introduced as a promotor. Thus, the effectiveness of the Pt-Bi catalyst was demonstrated in prior work. What is not clear, however, is the mechanism behind the catalyst function; why addition of bismuth to platinum decreases de...

  19. Aging of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Osadnik, Andreas

    2012-01-01

    Organic semiconductors formed by epitaxial growth from small molecules such as the para-phenylenes or squaraines promise a vast application potential as the active ingredient in electric and optoelectronic devices. Their self-organization into organic nanowires or "nanofibers" adds a peculiar...... attribute, making them especially interesting for light generation in OLEDs and for light-harvesting devices such as solar cells. Functionalization of the molecules allows the customization of optical and electrical properties. However, aging of the wires might lead to a considerable decrease in device...... performance over time. In this study the morphological stability of organic nanoclusters and nanowires from the methoxy functionalized quaterphenylene, 4,4'''dimethoxy-1,1':4',1''4'',1'''-quaterphenylene (MOP4), is investigated in detail. Aging experiments conducted by atomic force microscopy under ambient...

  20. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  1. Characterization of Nanowire Photodetectors

    Science.gov (United States)

    2016-11-28

    characterization system and picosecond pulsed laser source will be used to provide deeper insight into the fast charge carrier dynamics in the GaAsSb and...value of the current fluctuations for a particular frequency, f is the effective measurement bandwidth at the discrete frequency point, and IDS is...GaAsSb CS nanowires. The best fit of the spectra with the simulation carried out using Matlab revealed flicker noise at lower frequency having 1/f

  2. In situ electron beam irradiated rapid growth of bismuth nanoparticles in bismuth-based glass dielectrics at room temperature

    International Nuclear Information System (INIS)

    Singh, Shiv Prakash; Karmakar, Basudeb

    2011-01-01

    In this study, in situ control growth of bismuth nanoparticles (Bi 0 NPs) was demonstrated in bismuth-based glass dielectrics under an electron beam (EB) irradiation at room temperature. The effects of EB irradiation were investigated in situ using transmission electron microscopy (TEM), selected-area electron diffraction and high-resolution transmission electron microscopy. The EB irradiation for 2–8 min enhanced the construction of bismuth nanoparticles with a rhombohedral structure and diameter of 4–9 nm. The average particle size was found to increase with the irradiation time. Bismuth metal has a melting point of 271 °C and this low melting temperature makes easy the progress of energy induced structural changes during in situ TEM observations. This is a very useful technique in nano-patterning for integrated optics and other applications.

  3. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  4. Bismuth ferrite as low-loss switchable material for plasmonic waveguide modulator

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

    2014-01-01

    We propose new designs of plasmonic modulators, which can beused for dynamic signal switching in photonic integrated circuits. We studyperformance of a plasmonic waveguide modulator with bismuth ferrite as atunable material. The bismuth ferrite core is sandwiched between metalplates (metal...

  5. Superconductivity in nanowires

    CERN Document Server

    Bezryadin, Alexey

    2012-01-01

    The importance and actuality of nanotechnology is unabated and will be for years to come. A main challenge is to understand the various properties of certain nanostructures, and how to generate structures with specific properties for use in actual applications in Electrical Engineering and Medicine.One of the most important structures are nanowires, in particular superconducting ones. They are highly promising for future electronics, transporting current without resistance and at scales of a few nanometers. To fabricate wires to certain defined standards however, is a major challenge, and so i

  6. Optical Binding of Nanowires

    Czech Academy of Sciences Publication Activity Database

    Simpson, Stephen Hugh; Zemánek, Pavel; Marago, O.M.; Jones, P.H.; Hanna, S.

    2017-01-01

    Roč. 17, č. 6 (2017), s. 3485-3492 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Grant - others:AV ČR(CZ) CNR-16-12 Program:Bilaterální spolupráce Institutional support: RVO:68081731 Keywords : optical binding nanowires * Brownian motion * self-organization * non-equilibrium thermodynamics * non-equilibrium steady state * spin-orbit coupling * emergent phenomena Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.712, year: 2016

  7. Contact planarization of ensemble nanowires

    Science.gov (United States)

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  8. Controlled synthesis of bismuth oxyiodide toward optimization of photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Chenxing; Ma, Zhijun [State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China); Chen, Xiaofeng, E-mail: chenxf@scut.edu.c [Biomaterials Research Institute, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China); He, Xin [School of Applied Physics and Materials, Wuyi University, Jiangmen 529020 (China); Qiu, Jianrong, E-mail: qjr@scut.edu.cn [State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Wushan Road 381, Guangzhou 510641 (China)

    2016-11-30

    Highlights: • Different bismuth oxyiodide was synthesized. • The hollow Bi{sub 4}O{sub 5}I{sub 2} microspheres was obtained. • Formation mechanism of the hollow structure was discussed in detail. - Abstract: A new investigation on the variation rule of the structure, morphology, chemical composition and photocatalytic performance of bismuth oxyiodide synthesized by solvothermal method as a function of reaction conditions was performed here. The composition and morphology of the product could be determined by X-ray diffraction, thermogravimetric analysis and scanning electron microscopy. The results revealed that the particle size together with content of iodide in bismuth oxyiodide decrease with the increase of the concentration of reaction precursors. Hollow Bi{sub 4}O{sub 5}I{sub 2} microsphere with specific surface area as high as 120.88 m{sup 2} g{sup −1} can be easily synthesized when the concentration of the reaction precursors finally increased to 62.5 mM. Photocatalytic water purification performance of the as-prepared samples was evaluated by using Rhodamine B (RhB) as a model contaminant. The results revealed that the hollow Bi{sub 4}O{sub 5}I{sub 2} exhibited the best performance among all the bismuth oxyodide synthesized here for the degradation of RhB under visible light irradiation. Meanwhile, the formation mechanism of the hierarchical hollow structure of bismuth oxyiodide was investigated by the dissolution-recrystallization mechanism.

  9. Lead- or Lead-bismuth-cooled fast reactors

    International Nuclear Information System (INIS)

    Bouchter, J.C.; Courouau, J.L.; Dufour, P.; Guidez, J.; Latge, C.; Martinelli, L.; Renault, C.; Rimpault, G.

    2014-01-01

    Lead-cooled fast reactors are one of the 6 concepts retained for the 4. generation of nuclear reactors. So far no lead-cooled reactors have existed in the world except lead-bismuth-cooled reactors in soviet submarines. Some problems linked to the use of the lead-bismuth eutectic appeared but were satisfactorily solved by a more rigorous monitoring of the chemistry of the lead-bismuth coolant. Lead presents various advantages as a coolant: no reactivity with water and the air,a high boiling temperature and low contamination when irradiated. The main asset of the lead-bismuth alloy is the drop of the fusion temperature from 327 C degrees to 125 C degrees. The main drawback of using lead (or lead-bismuth) is its high corrosiveness with metals like iron, chromium and nickel. The high corrosiveness of the coolant implies low flow velocities which means a bigger core and consequently a bigger reactor containment. Different research programs in the world (in Europe, Russia and the USA) are reviewed in the article but it appears that the development of this type of reactor requires technological breakthroughs concerning materials and the resistance to corrosion. Furthermore the concept of lead-cooled reactors seems to be associated to a range of low output power because of the compromise between the size of the reactor and its resistance to earthquakes. (A.C.)

  10. Oxygen holes and hybridization in the bismuthates

    Science.gov (United States)

    Khazraie, Arash; Foyevtsova, Kateryna; Elfimov, Ilya; Sawatzky, George A.

    2018-02-01

    Motivated by the recently renewed interest in the superconducting bismuth perovskites, we investigate the electronic structure of the parent compounds A BiO3 (A = Sr, Ba) using ab initio methods and tight-binding (TB) modeling. We use the density functional theory (DFT) in the local density approximation (LDA) to understand the role of various interactions in shaping the A BiO3 band structure near the Fermi level. It is established that interatomic hybridization involving Bi-6 s and O-2 p orbitals plays the most important role. Based on our DFT calculations, we derive a minimal TB model and demonstrate that it can describe the properties of the band structure as a function of lattice distortions, such as the opening of a charge gap with the onset of the breathing distortion and the associated condensation of holes onto a1 g-symmetric molecular orbitals formed by the O-2 pσ orbitals on collapsed octahedra. We also derive a single band model involving the hopping of an extended molecular orbital involving both Bi-6 s and a linear combination of six O-2 p orbitals which provides a very good description of the dispersion and band gaps of the low energy scale bands straddling the chemical potential.

  11. Laser Spectroscopy of Neutron Rich Bismuth Isotopes

    CERN Multimedia

    2002-01-01

    %IS344 :\\\\ \\\\ The aim of the experiment is to measure the optical isotope shifts and hyperfine structures of bismuth isotopes across the N=126 shell closure in order to extract the change in mean square charge radii ($\\delta\\langle r^{2}\\rangle$) and static moments. These include the first isotones of lead to be measured directly above the shell closure and will provide new information on the systematics of the kink ($\\delta\\langle r^{2}\\rangle)$ seen in the lead isotopic chain. After two very successful runs the programme has been extended to include the neutron deficient isotopes below $^{201}$Bi to study the systematics across the $i_{13/2}$ neutron sub-shell closure at N=118.\\\\ \\\\ During the initial 2 runs (9 shifts) the isotope shifts and hyperfine structures of three new isotopes, $ ^{210,212,213}$Bi and the 9$^{-}$ isomer of $^{210}$Bi have been measured. The accuracy of the previous measurements of $^{205,206,208}$Bi have been greatly improved. The samples of $ ^{208,210,210^{m}}$Bi were prepared by c...

  12. Tunneling in cuprate and bismuthate superconductors

    International Nuclear Information System (INIS)

    Zasadzinski, J.F.; Huang, Qiang; Tralshawala, N.

    1991-10-01

    Tunneling measurements using a point-contact technique are reported for the following high temperature superconducting oxides: Ba 1-x K x BiO 3 (BKBO), Nd 2-x Ce x CuO 4 (NCCO), Bi 2 Sr 2 CaCu 2 O 7 (BSCCO) and Tl 2 Ba 2 CaCu 2 O x (TBCCO). For the bismuthate, BKBO, ideal, S-I-N tunneling characteristics are observed using a Au tip. The normalized conductance is fitted to a BCS density of states and thermal smearing only proving there is no fundamental limitation in BKBO for device applications. For the cuprates, the normalized conductance displays BCS-like characteristics, but with a broadening larger than from thermal smearing. Energy gap values are presented for each material. For BKBO and NCCO the Eliashberg functions, α 2 F(ω), obtained from the tunneling are shown to be in good agreement with neutron scattering results. Proximity effect tunneling studies are reported for Au/BSCCO bilayers and show that the energy gap of BSCCO can be observed through Au layers up to 600 Angstrom thick

  13. Use of Russian technology of ship reactors with lead-bismuth coolant in nuclear power

    International Nuclear Information System (INIS)

    Zrodnikov, A.V.; Chitaykin, V.I.; Gromov, B.F.; Grigoryv, O.G.; Dedoul, A.V.; Toshinsky, G.I.; Dragunov, Yu.G.; Stepanov, V.S.

    2000-01-01

    The experience of using lead-bismuth coolant in Russian nuclear submarine reactors has been presented. The fundamental statements of the concept of using the reactors cooled by lead-bismuth alloy in nuclear power have been substantiated. The results of developments for using lead bismuth coolant in nuclear power have been presented. (author)

  14. Prognostic Value of Bismuth Typing and Modified T-stage in Hilar Cholangiocarcinoma

    Directory of Open Access Journals (Sweden)

    Shengen Yi

    2015-01-01

    Conclusion: The majority of our patients with HCC were characterized as Subtype IV in Bismuth typing and Stage T3 in modified T-stage. Both Bismuth typing and modified T-stage showed prognostic value in HCC. Compared with Bismuth typing, modified T-stage is a better indicator of the resectability of HCC.

  15. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

    International Nuclear Information System (INIS)

    Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

    2015-01-01

    In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

  16. Interactions between semiconductor nanowires and living cells.

    Science.gov (United States)

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  17. Mechanism of manganese (mono and di) telluride thin-film formation and properties

    Science.gov (United States)

    Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

    2007-03-01

    Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

  18. GEOLOGY OF THE FLORENCIA GOLD – TELLURIDE DEPOSIT (CAMAGÜEY, CUBA AND SOME METALLURGICAL CONSIDERATIONS

    Directory of Open Access Journals (Sweden)

    López K Jesús M.

    2006-12-01

    Full Text Available This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after beneficiation and flotation of samples from these sectors.
    It is shown that gold deposits of the Cretaceous Volcanic Arc of Cuba largely consist of native gold, telluride and pyrite, where arsenopyrite is almost absent. Traces of lead, zinc and cadmium are present in the periphery of the main ore zones.

  19. Characterization of large cadmium zinc telluride crystals grown by traveling heater method

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Iniewski, K.

    2008-01-01

    The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

  20. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  1. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  2. Diagnostic Genesis Features of Au-Ag Selenide-Telluride Mineralization of Western Java Deposits

    Directory of Open Access Journals (Sweden)

    Euis Tintin Yuningsih

    2016-01-01

    Full Text Available DOI: 10.17014/ijog.3.1.67-76The ore mineralogy of the westernmost part of West Java such as Pongkor, Cibaliung, Cikidang, Cikotok, and Cirotan are characterized by the dominance of silver-arsenic-antimony sulfosalt with silver selenides and rarely tellurides over the argentite, whereas the eastern part of West Java including Arinem and Cineam deposits are dominated by silver-gold tellurides. Mineralogy of Se-type deposits at Pongkor, Cikidang, Cibaliung, Cisungsang, and Cirotan and Te-type deposits at Arinem and Cineam shows their different geochemical characteristics. Mineralogical and geochemical differences can be explained by variation of physico-chemical conditions that existed during gold-silver deposition by applying the phase relation among sulfide, telluride, and selenide mineral association in the deposits. The relative values of ƒSe2(g, ƒTe(g, and ƒS2(g control the actual presence of selenide or telluride minerals within the West Java deposits, which also depend on their concentrations in the hydrothermal fluid. Even though the concentration of selenium in the hydrothermal fluid of Te-type deposits might have been similar or even higher than that in the Se-type, early substitution of selenium in the sulfide minerals prevents its concentration in the hydrothermal fluid to the levels for precipitating selenide minerals. Therefore, early sulfide mineral deposition from reduction fluids will not increase the ƒSe2(g/ƒS2(g ratio to form selenide minerals in Te-type deposits of Arinem and Cineam, other than selenium-bearing sulfide mineral such as Se-bearing galena or Se-bearing pyrargyrite-proustite.

  3. Characterization of bismuth nanospheres deposited by plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, M., E-mail: cscientific2@aec.org.sy [IBA Laboratory, Chemistry Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic); Mrad, O. [Chemistry Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic)

    2015-02-14

    A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed.

  4. Inexpensive laser-induced surface modification in bismuth thin films

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, A. Reyes [Facultad de Ciencias, Universidad Autónoma del Estado de México, Carretera Toluca, Ixtlahuaca Kilómetro 15.5, C.P. 50200 Edo. de México (Mexico); Hautefeuille, M., E-mail: mathieu_h@ciencias.unam.mx [Facultad de Ciencias, Universidad Nacional Autónoma de México, Avenida Universidad 3000, Circuito Exterior S/N, Coyoacán, Ciudad Universitaria, C.P. 04510 D.F. Mexico (Mexico); García, A. Esparza [Fotofísica y Películas Delgadas, Departamento de Tecnociencias, CCADET-UNAM, Circuito exterior s/n C.P. 04510 Cd. Universitaria, D.F. Mexico (Mexico); Mejia, O. Olea [Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco, Km 14.5, Unidad El Rosedal, 50200 San Cayetano, Estado de México (Mexico); López, M.A. Camacho [Facultad de Química, Universidad Autónoma del Estado de México, Tollocan s/n, esq. Paseo Colón, Toluca, Estado de México 50110 (Mexico)

    2015-05-01

    Highlights: • Laser-induced microbumps were formed on bismuth films using a simple, low-cost, laser setup. • The patterns, similar to those typically obtained with high-power lasers, were characterized. • Control of laser ablation conditions is critical in the fabrication of surface microbumps. - Abstract: In this work, we present results on texturing a 500 nm thick bismuth film, deposited by sputtering onto a glass slide using a low-cost homemade, near-infrared pulsed laser platform. A 785 nm laser diode of a CD–DVD pickup head was precisely focused on the sample mounted on a motorized two-axis translation stage to generate localized surface microbumps on the bismuth films. This simple method successfully transferred desired micropatterns on the films in a computer-numerical control fashion. Irradiated zones were characterized by atomic force microscopy and scanning electron microscopy. It was observed that final results are strongly dependent on irradiation parameters.

  5. Characterization of bismuth nanospheres deposited by plasma focus device

    International Nuclear Information System (INIS)

    Ahmad, M.; Al-Hawat, Sh.; Akel, M.; Mrad, O.

    2015-01-01

    A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed

  6. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  7. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

    2016-01-01

    for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

  8. Biotemplated Synthesis of PZT Nanowires

    Science.gov (United States)

    2013-11-25

    electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

  9. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  10. MES lead bismuth forced circulation loop and test results

    International Nuclear Information System (INIS)

    Ono, Mikinori; Mine, Tatsuya; Kitano, Teruaki; Kamata, Kin-ya

    2003-01-01

    Liquid lead-bismuth is a promising material as future reactor coolant or intensive neutron source material for accelerator driven system (ADS). Mitsui Engineering and Shipbuilding Co., Ltd. (MES) completed lead-bismuth coolant (LBC) forced circulation loop in May 2001 and acquired engineering data on economizer, electro magnetic pump, electro magnetic flow meter and so on. For quality control of LBC, oxygen sensor and filtering element are developing using some hydrogen and moisture mixed gases. Structural materials corrosion test for accelerator driver system (ADS) will start soon. And thermal hydraulic test for ADS will start in tree years. (author)

  11. Hydrolysis studies on bismuth nitrate: synthesis and crystallization of four novel polynuclear basic bismuth nitrates.

    Science.gov (United States)

    Miersch, L; Rüffer, T; Schlesinger, M; Lang, H; Mehring, M

    2012-09-03

    Hydrolysis of Bi(NO(3))(3) in aqueous solution gave crystals of the novel compounds [Bi(6)O(4)(OH)(4)(NO(3))(5)(H(2)O)](NO(3)) (1) and [Bi(6)O(4)(OH)(4)(NO(3))(6)(H(2)O)(2)]·H(2)O (2) among the series of hexanuclear bismuth oxido nitrates. Compounds 1 and 2 both crystallize in the monoclinic space group P2(1)/n but show significant differences in their lattice parameters: 1, a = 9.2516(6) Å, b = 13.4298(9) Å, c = 17.8471(14) Å, β = 94.531(6)°, V = 2210.5(3) Å(3); 2, a = 9.0149(3) Å, b = 16.9298(4) Å, c = 15.6864(4) Å, β = 90.129(3)°, V = 2394.06(12) Å(3). Variation of the conditions for partial hydrolysis of Bi(NO(3))(3) gave bismuth oxido nitrates of even higher nuclearity, [{Bi(38)O(45)(NO(3))(24)(DMSO)(26)}·4DMSO][{Bi(38)O(45)(NO(3))(24)(DMSO)(24)}·4DMSO] (3) and [{Bi(38)O(45)(NO(3))(24)(DMSO)(26)}·2DMSO][{Bi(38)O(45)(NO(3))(24)(DMSO)(24)}·0.5DMSO] (5), upon crystallization from DMSO. Bismuth oxido clusters 3 and 5 crystallize in the triclinic space group P1 both with two crystallographically independent molecules in the asymmetric unit. The following lattice parameters are observed: 3, a = 20.3804(10) Å, b = 20.3871(9) Å, c = 34.9715(15) Å, α = 76.657(4)°, β = 73.479(4)°, γ = 60.228(5)°, V = 12021.7(9) Å(3); 5, a = 20.0329(4) Å, b = 20.0601(4) Å, c = 34.3532(6) Å, α = 90.196(1)°, β = 91.344(2)°, γ = 119.370(2)°, V = 12025.8(4) Å(3). Differences in the number of DMSO molecules (coordinated and noncoordinated) and ligand (nitrate, DMSO) coordination modes are observed.

  12. Electrochemically grown rough-textured nanowires

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  13. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  14. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  15. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  16. Controlling nanowire emission profile using conical taper

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2008-01-01

    The influence of a conical taper on nanowire light emission is studied. For nanowires with divergent output beams, the introduction of tapers improves the emission profile and increase the collection efficiency of the detection optics....

  17. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  18. Electrochemical synthesis of highly crystalline copper nanowires

    International Nuclear Information System (INIS)

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  19. Bismuth oxyfluoride @ CMK-3 nanocomposite as cathode for lithium ion batteries

    Science.gov (United States)

    Ni, Dan; Sun, Wang; Xie, Liqiang; Fan, Qinghua; Wang, Zhenhua; Sun, Kening

    2018-01-01

    Bismuth oxyfluoride impregnated CMK-3 nanocomposite is synthesized by a facile nanocasting approach. Mesoporous carbon CMK-3 can suppress the aggregation and growth of bismuth oxyfluoride particles and offer rapid electron and Li ion passageways. Bismuth oxyfluoride nanoparticles are embedded in the mesoporous channels with particle size less than 20 nm. The bismuth oxyfluoride@CMK-3 nanocomposite maintains 148 mA h g-1 after 40 cycles with the capacity from both the bismuth oxyfluoride and the functional groups on the mesoporous carbon. The hybrid with confined bismuth oxyfluoride nanoparticles, conductive carbon network, and oxygen functional groups on the carbon matrix exhibits higher capacity and cycling stability than bulk bismuth oxyfluoride particles when used as lithium ion batteries cathode.

  20. Temperature gradient compatibility tests of some refractory metals and alloys in bismuth and bismuth--lithium solutions

    International Nuclear Information System (INIS)

    DiStefano, J.R.; Cavin, O.B.

    1976-11-01

    Quartz, T-111, and Mo thermal-convection loop tests were conducted at temperatures up to 700 0 C (100 0 C ΔT) to determine the compatibility of several refractory metals/alloys with bismuth and bismuth-lithium solutions for molten salt breeder reactor applications. Methods of evaluation included weight change measurements, metallographic examination, chemical and electron microprobe analysis, and mechanical properties tests. Molybdenum, T-111, and TA--10 percent W appear to be the most promising containment materials, while niobium and iron-based alloys are unacceptable

  1. From dopyballs to nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Smalley, R E [Rice Quantum Inst. and Depts. of Chemistry and Physics, Rice Univ., Houston, TX (United States)

    1993-04-19

    Consideration of the factors involved in the production of fullerene nanotubes in carbon arcs leads to the notion that a high electric field may be the critical factor that causes the tubes to grow. This thought then leads to a suggestion that it may be possible to grow continuous fullerene fibers many centimeters in length by an electric-field-and-laser induced pyrolysis of gas phase hydrocarbons of fullerenes on the tip of the growing fiber as it extends out from its place of attachment on a high voltage needle. Use of metal- or boron-doped fullerenes (dopyballs) in such an apparatus may lead to the production of doped fullerene fiber nanowires of high strength and conductivity. (orig.)

  2. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  3. Resonance of curved nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Calabri, L [CNR-INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Via Campi 213/a, 41100 Modena (Italy); Pugno, N [Department of Structural Engineering and Geotechnics, Politecnico di Torino, Turin (Italy); Ding, W [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States); Ruoff, R S [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States)

    2006-08-23

    The effects of non-ideal experimental configuration on the mechanical resonance of boron (B) nanowires (NWs) were studied to obtain the corrected value for the Young's modulus. The following effects have been theoretically considered: (i) the presence of intrinsic curvature (ii) non-ideal clamps (iii) spurious masses (iv) coating layer, and (v) large displacements. An energy-based analytical analysis was developed to treat such effects and their interactions. Here, we focus on treating the effect of the intrinsic curvature on the mechanical resonance. The analytical approach has been confirmed by numerical FEM analysis. A parallax method was used to obtain the three-dimensional geometry of the NW.

  4. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

    2017-01-01

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  5. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jürgen

    2017-10-05

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  6. Topological insulator nanowires and nanowire hetero-junctions

    Science.gov (United States)

    Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

    2014-03-01

    The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

  7. Measured and evaluated neutron cross sections of elemental bismuth

    International Nuclear Information System (INIS)

    Smith, A.; Guenther, P.; Smith, D.; Whalen, J.; Howerton, R.

    1980-04-01

    Neutron total cross sections of elemental bismuth are measured with broad resolution from 1.2 to 4.5 MeV to accuracies of approx. = 1%. Neutron-differential-elastic-scattering cross sections of bismuth are measured from 1.5 to 4.0 MeV at incident neutron energy intervals of approx.< 0.2 MeV over the scattered-neutron angular range approx. = 20 to 160 deg. Differential neutron cross sections for the excitation of observed states in bismuth at 895 +- 12, 1606 +- 14, 2590 +- 15, 2762 +- 29, 3022 +- 21, and 3144 +- 15 keV are determined at incident neutron energies up to 4.0 MeV. An optical-statistical model is deduced from the measured values. This model, the present experimental results, and information available elsewhere in the literature are used to construct a comprehensive evaluated nuclear data file for elemental bismuth in the ENDF format. The evaluated file is particularly suited to the neutronic needs of the fusion-fission hybrid designer. 87 references, 10 figures, 6 tables

  8. The reduction of background signal in bismuth germanate scintillators

    International Nuclear Information System (INIS)

    Lewis, T.A.

    1986-07-01

    Bismuth germanate (BGO) is one of several new scintillator materials developed in recent years. It has similar energy resolution (6-8%) to sodium iodide (NaI) but it is non-hygroscopic, has a much better Peak-to-Compton ratio and a stopping power about 2.3 times greater than NaI. For counting activated foils it represents an improvement on NaI for high efficiency counting where the resolution of a germanium spectrometer is not required. Two scintillators bought for this purpose were found to have a higher than expected background signal between 500 keV and 2 MeV which was traced to Bi207, an active isotope of bismuth with a 38 year half-life and not listed as occurring naturally. Reference to the manufacturer showed all crystals to be similarly contaminated. It is speculated that this active isotope arises from cosmic proton activation of associated lead in the ore from which the bismuth is extracted. Although not confirmed rigorously it has been shown that bismuth extracted from ore with a low lead content does not contain Bi207. Scintillators have been manufactured from uncontaminated material and reductions in the background signal of more than an order of magnitude have been achieved. This reduction will be of immediate benefit for monitoring nickel foils (fast flux monitors) activated in zero-energy reactors and should also permit the exploitation of other low probability reactions previously not thought to be feasible. (author)

  9. Short-term static corrosion tests in lead-bismuth

    Science.gov (United States)

    Soler Crespo, L.; Martín Muñoz, F. J.; Gómez Briceño, D.

    2001-07-01

    Martensitic steels have been proposed to be used as structural materials and as spallation target window in hybrid systems devoted to the transmutation of radioactive waste of long life and high activity. However, their compatibility with lead-bismuth in the operating conditions of these systems depends on the existence of a protective layer such as an oxide film. The feasibility of forming and maintaining an oxide layer or maintaining a pre-oxidised one has been studied. Martensitic steel F82Hmod. (8% Cr) has been tested in lead-bismuth under static and isothermal conditions at 400°C and 600°C. In order to study the first stages of the interaction between the steel and the eutectic, short-term tests (100 and 665 h) have been carried out. Pre-oxidised and as-received samples have been tested in atmospheres with different oxidant potential. For low oxygen concentration in lead-bismuth due to unexpected oxygen consumption in the experimental device, dissolution of as-received F82Hmod. occurs and pre-oxidation does not prevent the material dissolution. For high oxygen concentration, the pre-oxidation layer seems to improve the feasibility of protecting stainless steels controlling the oxygen potential of lead-bismuth with a gas phase.

  10. Short-term static corrosion tests in lead-bismuth

    International Nuclear Information System (INIS)

    Soler Crespo, L.; Martin Munoz, F.J.; Gomez Briceno, D.

    2001-01-01

    Martensitic steels have been proposed to be used as structural materials and as spallation target window in hybrid systems devoted to the transmutation of radioactive waste of long life and high activity. However, their compatibility with lead-bismuth in the operating conditions of these systems depends on the existence of a protective layer such as an oxide film. The feasibility of forming and maintaining an oxide layer or maintaining a pre-oxidised one has been studied. Martensitic steel F82Hmod. (8% Cr) has been tested in lead-bismuth under static and isothermal conditions at 400 o C and 600 o C. In order to study the first stages of the interaction between the steel and the eutectic, short-term tests (100 and 665 h) have been carried out. Pre-oxidised and as-received samples have been tested in atmospheres with different oxidant potential. For low oxygen concentration in lead-bismuth due to unexpected oxygen consumption in the experimental device, dissolution of as-received F82Hmod. occurs and pre-oxidation does not prevent the material dissolution. For high oxygen concentration, the pre-oxidation layer seems to improve the feasibility of protecting stainless steels controlling the oxygen potential of lead-bismuth with a gas phase

  11. Pairing from dynamically screened Coulomb repulsion in bismuth

    Science.gov (United States)

    Ruhman, Jonathan; Lee, Patrick A.

    2017-12-01

    Recently, Prakash et al. have discovered bulk superconductivity in single crystals of bismuth, which is a semimetal with extremely low carrier density. At such low density, we argue that conventional electron-phonon coupling is too weak to be responsible for the binding of electrons into Cooper pairs. We study a dynamically screened Coulomb interaction with effective attraction generated on the scale of the collective plasma modes. We model the electronic states in bismuth to include three Dirac pockets with high velocity and one hole pocket with a significantly smaller velocity. We find a weak-coupling instability, which is greatly enhanced by the presence of the hole pocket. Therefore we argue that bismuth is the first material to exhibit superconductivity driven by retardation effects of Coulomb repulsion alone. By using realistic parameters for bismuth we find that the acoustic plasma mode does not play the central role in pairing. We also discuss a matrix element effect, resulting from the Dirac nature of the conduction band, which may affect Tc in the s -wave channel without breaking time-reversal symmetry.

  12. Synthesis and structural characterization of Ce-doped bismuth titanate

    International Nuclear Information System (INIS)

    Pavlovic, Nikolina; Srdic, Vladimir V.

    2009-01-01

    Ce-modified bismuth titanate nanopowders Bi 4-x Ce x Ti 3 O 12 (x ≤ 1) have been synthesized using a coprecipitation method. DTA/TG, FTIR, XRD, SEM/EDS and BET methods were used in order to investigate the effect of Ce-substitution on the structure, morphology and sinterability of the obtained powders. The phase structure investigation revealed that after calcinations at 600 deg. C powder without Ce addition exhibited pure bismuth titanate phase; however, powders with Ce (x = 0.25, 0.5 and 0.75) had bismuth titanate pyrochlore phase as the second phase. The strongest effect of Ce addition on the structure was noted for the powder with the highest amount of Ce (x = 1) having a cubic pyrochlore structure. The presence of pure pyrochlore phase was explained by its stabilization due to the incorporation of cerium ions in titanate structure. Ce-modified bismuth titanate ceramic had a density over 95% of theoretical density and the fracture in transgranular manner most probably due to preferable distribution of Ce in boundary region

  13. Void worths in subcritical cores cooled by lead-bismuth

    International Nuclear Information System (INIS)

    Wallenius, Janne; Tucek, Kamil; Gudowski, Waclaw

    2001-01-01

    The introduction lead-bismuth coolant in accelerator driven transmutation systems (ADS) was: good neutron economy (higher source efficiency); natural circulation possible (decay heat removal); synergy with spallation target (simplified coolant management); high temperature of boiling (larger overpower margin); smaller void worths (operation at higher k-values). This paper deals with different aspects of the void worths in JAERI ADS

  14. Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

    Science.gov (United States)

    Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

    1995-09-01

    Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

  15. Ultrafast electron diffraction studies of optically excited thin bismuth films

    International Nuclear Information System (INIS)

    Rajkovic, Ivan

    2008-01-01

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  16. Bismuth Ferrite for Active Control of Surface Plasmon Polariton Modes

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

    2014-01-01

    We propose and investigate several layouts of m etal-insulator-metal waveguide with active core which can be utilized for dynamic switching in photonic integrated circuits. The active material, bismuth ferrite (BiFeO3), is sandwiched between metal plates and changes i ts refractive index through...

  17. Ultrafast electron diffraction studies of optically excited thin bismuth films

    Energy Technology Data Exchange (ETDEWEB)

    Rajkovic, Ivan

    2008-10-21

    This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

  18. AB initio energetics of lanthanum substitution in ferroelectric bismuth titanate

    International Nuclear Information System (INIS)

    Shah, S.H.

    2012-01-01

    Density functional theory based electronic structure calculations play a vital role in understanding, controlling and optimizing physical properties of materials at microscopic level. In present study system of interest is bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/)/(BIT) which has wide range of applications such as a high temperature piezoelectric and one of the best material for memory devices. However, it also suffers from serious issues such as oxygen vacancies which degrade its performance as a memory element and piezoelectric material. In this context, the bulk and defect properties of orthorhombic bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) and bismuth lanthanum titanate (Bi/sub 3.25/La/sub 0.75/Ti/sub 3/O/sub 12/)/(BLT, x=0.75) were investigated by using first principles calculations and atomistic thermodynamics. Heats of formation, valid chemical conditions for synthesis, lanthanum substitution energies and oxygen and bismuth vacancy formation energies were computed. The study improves understanding of how native point defects and substitutional impurities influence the ferroelectric properties of these layered perovskite materials. It was found that lanthanum incorporation could occur on either of the two distinct bismuth sites in the structure and that the effect of substitution is to increase the formation energy of nearby native oxygen vacancies. The results provide direct atomistic evidence over a range of chemical conditions for the suggestion that lanthanum incorporation reduces the oxygen vacancy concentration. Oxygen vacancies contribute to ferroelectric fatigue by interacting strongly with domain walls and therefore a decrease in their concentration is beneficial. (orig./A.B.)

  19. Gold nanowires and the effect of impurities

    Directory of Open Access Journals (Sweden)

    Novaes Frederico

    2006-01-01

    Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

  20. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  1. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  2. Efficient enhancement of bismuth NIR luminescence by aluminum and its mechanism in bismuth doped germanate laser glass

    DEFF Research Database (Denmark)

    Wang, L.P.; Tan, L.L.; Yue, Yuanzheng

    2016-01-01

    As a new member of laser glass family, bismuth-doped glasses have received rising interests due to the application of fiber amplifiers and laser sources in the new spectral range for the next-generation optical communication system. For practical application of the glasses, it must be considered ...

  3. Formation of gas-phase π-allyl radicals from propylene over bismuth oxide and γ-bismuth molybdate catalysts

    International Nuclear Information System (INIS)

    Martir, W.; Lunsford, J.H.

    1981-01-01

    Gas-phase π-allyl radicals were produced when propylene reacted over Bi 2 O 3 and γ-bismuth molybdate catalysts at 723 K. The pressure in the catalyst zone was varied between 5 x 10 -3 and 1 torr. The radicals were detected by EPR spectroscopy together with a matrix isolation technique in which argon was used as the diluent. The matrix was formed on a sapphire rod at 12 K which was located 33-cm downstream from the catalyst. Bismuth oxide was more effective in the production of gas-phase allyl radicals than γ-bismuth molybdate. By contrast α-bismuth molybdate was ineffective in forming allyl radicals and MoO 3 acted as a sink for radicals which were produced elsewhere in the system. Comparison of the π-allyl radical and the stable product concentrations over Bi 2 O 3 revealed that gas-phase radical recombination reactions served as a major pathway for the formation of 1,5-hexadiene. Addition of small amounts of gas-phase oxygen increased the concentration of allyl radicals, and at greater oxygen levels allyl peroxy radicals were detected. Because of the effect of temperature on the equilibrium between allyl and allyl peroxy radicals, the latter product must be formed in the cooler part of the system

  4. Methods for synthesizing metal oxide nanowires

    Science.gov (United States)

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  5. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  6. Nanowire failure: long = brittle and short = ductile.

    Science.gov (United States)

    Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

    2012-02-08

    Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

  7. Diameter-dependent coloration of silver nanowires

    International Nuclear Information System (INIS)

    Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth

    2011-01-01

    Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.

  8. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  9. Tiny optical fiber temperature sensor based on temperature-dependent refractive index of zinc telluride film

    Science.gov (United States)

    Bian, Qiang; Song, Zhangqi; Song, Dongyu; Zhang, Xueliang; Li, Bingsheng; Yu, Yang; Chen, Yuzhong

    2018-03-01

    The temperature-dependent refractive index of zinc telluride film can be used to develop a tiny, low cost and film-coated optical fiber temperature sensor. Pulse reference-based compensation technique is used to largely reduce the background noise which makes it possible to detect the minor reflectivity change of the film in different temperatures. The temperature sensitivity is 0.0034dB/° and the background noise is measured to be 0.0005dB, so the resolution can achieve 0.2°.

  10. Cadmium telluride gamma-radiation detectors with a high energy resolution

    International Nuclear Information System (INIS)

    Alekseeva, L.A.; Dorogov, P.G.; Ivanov, V.I.; Khusainov, A.K.

    1985-01-01

    This paper considers the possibility of improving the energy resolution of cadmium telluride gamma-radiation detectors through the choice of the geometry and size of the sensitive region of the detector. The optimum ratio of the product of the mobility and lifetime for electrons to the same product for holes from the point of view of energy resolution is greater than or equal to 10 2 for a detector of spherical geometry and should be less than or equal to 10 for a cylindrical geometry and approximately 1 for a planar geometry. The optimum values of the major and minor radii of a spherical detector are calculated

  11. Formation of solid solutions on the boundary of zinc oxidezinc telluride heterojunction

    International Nuclear Information System (INIS)

    Tsurkan, A.E.; Buzhor, L.V.

    1987-01-01

    Distribution of ZnO x Te 1-x alloy composition on the interface of zinc oxide-zinc telluride heterojunction depending on the production conditions is investigated. A regularity in the formation of an extended area with constant alloy composition is detected. The regularity is explained by the fact that electric Peltier field conditioned by contact of two heterogeneous semiconductors participates in the solid solution formation process. Peltier field levels off the composition at the end length section. So, a possibility of creating a section with the assigned minor thickness alloy constant composition controlled in the interface of heterojunction occurs

  12. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  13. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric

  14. Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance

    CERN Document Server

    Van Scyoc, J M; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

    1999-01-01

    Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

  15. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

  16. Equilibrium evaporation test of lead-bismuth eutectic and of tellurium in lead-bismuth

    International Nuclear Information System (INIS)

    Ohno, Shuji; Nishimura, Masahiro; Hamada, Hirotsugu; Miyahara, Shinya; Sasa, Toshinobu; Kurata, Yuji

    2005-01-01

    A series of equilibrium evaporation experiment was performed to acquire the essential and the fundamental knowledge about the transfer behavior of lead-bismuth eutectic (LBE) and impurity tellurium in LBE from liquid to gas phase. The experiments were conducted using the transpiration method in which saturated vapor in an isothermal evaporation pot was transported by inert carrier gas and collected outside of the pot. The size of the used evaporation pot is 8 cm inner diameter and 15 cm length. The weight of the LBE pool in the pot is about 500 g. The investigated temperature range was 450degC to 750degC. From this experiment and discussion using the data in literature, we have obtained several instructive and useful data on the LBE evaporation behavior such as saturated vapor pressure of LBE, vapor concentration of Pb, Bi and Bi 2 in LBE saturated gas phase, and activity coefficient of Pb in the LBE. The LBE vapor pressure equation is represented as the sum of Pb, Bi and Bi 2 vapor in the temperature range between 550degC and 750degC as logP[Pa]=10.2-10100/T[k]. The gas-liquid equilibrium partition coefficient of tellurium in LBE is in the range of 10 to 100, with no remarkable temperature dependency between 450degC and 750degC. This research was founded by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). (author)

  17. Quantum optics with nanowires (Conference Presentation)

    Science.gov (United States)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  18. Rapid semi-quantitative determination of bismuth in minerals using ascending paper chromatography (1961)

    International Nuclear Information System (INIS)

    Agrinier, H.

    1961-01-01

    The bismuth is separated by a solvent made up of acetone, water, and hydrofluoric and hydrochloric acids. The bismuth is developed with dimercapto-2.5 thio-diazole-1.3.4 and ammonium sulphide. The use of this method for the detection of bismuth in minerals makes it possible to determine the metal at a concentration of 5 x 10 -6 . (author) [fr

  19. Influence of bismuth on structural, elastic and spectroscopic properties of Nd{sup 3+} doped Zinc–Boro-Bismuthate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Gaurav; Sontakke, Atul D.; Karmakar, P.; Biswas, K.; Balaji, S.; Saha, R.; Sen, R.; Annapurna, K., E-mail: annapurnak@cgcri.res.in

    2014-05-01

    The present investigation reports, influence of bismuth addition on structural, elastic and spectral properties of [(99.5−x) {4ZnO−3B_2O_3}−0.5Nd{sub 2}O{sub 3}−x Bi{sub 2}O{sub 3} where x=0, 5, 10, 20, 30, 40, 50 and 60] glasses. The measured FTIR reflectance spectra facilitated a thorough insight of methodical modifications that are arising in the glass structure from borate (build by BO{sub 3} and BO{sub 4} units) to bismuthate (BiO{sub 3} and BiO{sub 6} units) network due to the increase of bismuth content ensuing with a steady decrease in host phonon energy (ν{sub ph}). The elastic properties estimated from measured longitudinal and shear ultrasonic velocities (U{sub L} and U{sub s}) demonstrated the reduction in network rigidity of glasses on Bi{sub 2}O{sub 3} inclusion. The three phenomenological Judd–Ofelt intensity parameters (Ω{sub 2,4,6}) were obtained from recorded absorption spectra of Nd{sup 3+} ions in these glasses and have been used to predict radiative properties as a function of variation in bismuth content. The reduced host phonon energy and high optical basicity effect due to Bi{sub 2}O{sub 3} incorporation remarkably improved the Nd{sup 3+} luminescence properties such as emission intensity, quantum yield and emission cross-section. The quantum yield showed a strong increase from mere 16% in Zinc–Borate glass to almost 73% in 60 mol% Bi{sub 2}O{sub 3} containing glass. Similarly, the emission cross-section for Nd{sup 3+4}F{sub 3/2}→{sup 4}I{sub 11/2} laser transition raised from 2.43×10{sup −20} cm{sup 2} to 3.95×10{sup −20} cm{sup 2} in studied concentration suggesting a strong improvement in Nd{sup 3+} laser spectroscopic properties in Zinc–Boro-Bismuthate glass. These materials may be promising for compact solid state infrared lasers. - Highlights: • Continuous structural changes associated with reduction in host phonon energy by Bi{sub 2}O{sub 3} inclusion. • Ultrasonic velocity study revealed reduced Debye

  20. Phase transition of solid bismuth under high pressure

    International Nuclear Information System (INIS)

    Chen Hai-Yan; Xiang Shi-Kai; Yan Xiao-Zhen; Zhang Yi; Liu Sheng-Gang; Bi Yan; Zheng Li-Rong

    2016-01-01

    As a widely used pressure calibrator, the structural phase transitions of bismuth from phase I, to phase II, to phase III, and then to phase V with increasing pressure at 300 K have been widely confirmed. However, there are different structural versions for phase III, most of which are determined by x-ray diffraction (XRD) technology. Using x-ray absorption fine structure (XAFS) measurements combined with ab initio calculations, we show that the proposed incommensurate composite structure of bismuth of the three configurations is the best option. An abnormal continuous increase of the nearest-neighbor distance of phase III with elevated pressure is also observed. The electronic structure transformation from semimetal to metal is responsible for the complex behavior of structure transformation. (paper)

  1. Ac irreversibility line of bismuth-based high temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Mehdaoui, A. [Laboratoire de Physique et de Spectroscopie Electronique, URA 1435 Faculte des Sciences, Universite de Haute Alsace 4, rue des Freres Lumiere, 68093 Mulhouse Cedex (France); Beille, J. [Laboratoire Louis Neel, CNRS, BP 166, 38042 Grenoble Cedex 9 (France); Berling, D.; Loegel, B. [Laboratoire de Physique et de Spectroscopie Electronique, URA 1435 Faculte des Sciences, Universite de Haute Alsace 4, rue des Freres Lumiere, 68093 Mulhouse Cedex (France); Noudem, J.G.; Tournier, R. [EPM-MATFORMAG, Laboratoire dElaboration par Procede Magnetique, CNRS, BP 166, 38042 Grenoble Cedex 9 (France)

    1997-09-01

    We discuss the magnetic properties of lead doped Bi-2223 bulk samples obtained through combined magnetic melt texturing and hot pressing (MMTHP). The ac complex susceptibility measurements are achieved over a broad ac field range (1 Oe{lt}h{sub ac}{lt}100 Oe) and show highly anisotropic properties. The intergranular coupling is improved in the direction perpendicular to the applied stress and magnetic field direction, and an intragranular loss peak is observed for the first time. A comparison is made with other bismuth-based compounds and it is shown that the MMTHP process shifts the ac irreversibility line (ac IL) toward higher fields. It is also shown that all the ac IL{close_quote}s for quasi 2D bismuth-based compounds show a nearly quadratic temperature dependence and deviate therefore strongly from the linear behavior observed in quasi 3D compounds and expected from a critical state model.{copyright} {ital 1997 Materials Research Society.}

  2. Ac irreversibility line of bismuth-based high temperature superconductors

    International Nuclear Information System (INIS)

    Mehdaoui, A.; Beille, J.; Berling, D.; Loegel, B.; Noudem, J.G.; Tournier, R.

    1997-01-01

    We discuss the magnetic properties of lead doped Bi-2223 bulk samples obtained through combined magnetic melt texturing and hot pressing (MMTHP). The ac complex susceptibility measurements are achieved over a broad ac field range (1 Oe ac <100 Oe) and show highly anisotropic properties. The intergranular coupling is improved in the direction perpendicular to the applied stress and magnetic field direction, and an intragranular loss peak is observed for the first time. A comparison is made with other bismuth-based compounds and it is shown that the MMTHP process shifts the ac irreversibility line (ac IL) toward higher fields. It is also shown that all the ac IL close-quote s for quasi 2D bismuth-based compounds show a nearly quadratic temperature dependence and deviate therefore strongly from the linear behavior observed in quasi 3D compounds and expected from a critical state model.copyright 1997 Materials Research Society

  3. Quantum nernst effect in a bismuth single crystal

    International Nuclear Information System (INIS)

    Matsuo, M.; Endo, A.; Hatano, N.; Nakamura, H.; Shirasaki, R.; Sugihara, K.

    2009-07-01

    We calculate the phonon-drag contribution to the transverse (Nernst) thermoelectric power S yx in a bismuth single crystal subjected to a quantizing magnetic field. The calculated heights of the Nernst peaks originating from the hole Landau levels and their temperature dependence reproduce the right order of magnitude for those of the pronounced magneto-oscillations recently reported by Behnia et al. A striking experimental finding that S yx is much larger than the longitudinal (Seebeck) thermoelectric power S xx can be naturally explained as the effect of the phonon drag, combined with the well-known relation between the longitudinal and the Hall resistivity ρ xx >> |ρ yx | in a semi-metal bismuth. The calculation that includes the contribution of both holes and electrons suggests that some of the hitherto unexplained minor peaks located roughly at the fractional filling of the hole Landau levels are attributable to the electron Landau levels. (author)

  4. Nanophotonic Modulator with Bismuth Ferrite as Low-loss Switchable Material

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Zhukovsky, Sergei; Lavrinenko, Andrei

    2015-01-01

    We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved.......We propose a nanophotonic waveguide modulator with bismuth ferrite as a tunable material. Due to near-zero losses in bismuth ferrite, modulation with up to 20 dB/μm extinction ratio and 12 μm propagation length is achieved....

  5. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2015-01-25

    Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

  6. Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

    2017-03-01

    Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

  7. Possible bicollinear nematic state with monoclinic lattice distortions in iron telluride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, Christopher B. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Herbrych, Jacek W. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Dagotto, Elbio R. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moreo, Adriana [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-15

    Here, iron telluride (FeTe) is known to display bicollinear magnetic order at low temperatures together with a monoclinic lattice distortion. Because the bicollinear order can involve two different wave vectors (π/2,π/2) and (π/2,–π/2), symmetry considerations allow for the possible stabilization of a nematic state with short-range bicollinear order coupled to monoclinic lattice distortions at a TS higher than the temperature TN where long-range bicollinear order fully develops. As a concrete example, the three-orbital spin-fermion model for iron telluride is studied with an additional coupling ˜λ12 between the monoclinic lattice strain and an orbital-nematic order parameter with B2g symmetry. Monte Carlo simulations show that with increasing ˜λ12 the first-order transition characteristic of FeTe splits and bicollinear nematicity is stabilized in a (narrow) temperature range. In this new regime, the lattice is monoclinically distorted and short-range spin and orbital order breaks rotational invariance. A discussion of possible realizations of this exotic state is provided.

  8. The use of cadmium telluride γ spectrometers in monitoring activity deposited in nuclear power stations

    International Nuclear Information System (INIS)

    Jones, L.T.

    1977-01-01

    The ability to inspect and test key components and when necessary repair or replace them is a significant factor in the safety case submitted before consent is given for construction of a nuclear reactor. A knowledge of the probable rate of deposition and isotopic composition of radioactive contamination in these areas is necessary and since it is not always practicable to take samples away to the laboratory for analysis, direct gamma ray spectroscopy in the contaminated environment is sometimes used. The experience of direct monitoring with a cadmium telluride spectrometer in two such reactor situations is reported. In the first situation, a remotely cooled intrinsic Germanium spectrometer was used in equivalent positions and spectra from both systems are presented. The relative merits of the two systems are discussed. In the second situation, measurements were made in an environment at 70 deg C in radiation levels of 10Rh -1 . An improvised cooling system was used to maintain the Cadmium Telluride at about 20 deg C and Pile-up Rejection was used to enable count rates of about 10 5 s -1 to be handled. It is noted that the usually quoted detector parameters, resolution and crystal volume, are not necessarily the most important in practical spectrometry of mixed isotopes. As with germanium detectors, the most useful parameter is probably the Peak-to-Compton ratio

  9. Photonic nanowires for quantum optics

    DEFF Research Database (Denmark)

    Munsch, M.; Claudon, J.; Bleuse, J.

    Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

  10. Tunneling and Transport in Nanowires

    International Nuclear Information System (INIS)

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  11. Tunneling and Transport in Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  12. Biotemplated synthesis of PZT nanowires.

    Science.gov (United States)

    Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

    2013-01-01

    Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

  13. Nanowire-based gas sensors

    NARCIS (Netherlands)

    Chen, X.; Wong, C.K.Y.; Yuan, C.A.; Zhang, G.

    2013-01-01

    Gas sensors fabricated with nanowires as the detecting elements are powerful due to their many improved characteristics such as high surface-to-volume ratios, ultrasensitivity, higher selectivity, low power consumption, and fast response. This paper gives an overview on the recent process of the

  14. Dose reduction using Bismuth protectors in chest computed tomography

    International Nuclear Information System (INIS)

    Anaya, R.

    2012-01-01

    This monography is about the Dose reduction using Bismuth protectors in chest CT. The radiation protection of specific areas is necessary when the tissues or radiosensitive organs are near the path of light beam. The correct use of protection represents a challenge for the radiologist because of the time and materials required. The method used was a prospective investigatio in CHPR (TC service) and the doses was measured with TLD dosimeters. It is important to use these protectors in children hospitals.

  15. Oxide layer stability in lead-bismuth at high temperature

    Science.gov (United States)

    Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

    2004-11-01

    Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

  16. Study of barium bismuth titanate prepared by mechanochemical synthesis

    Directory of Open Access Journals (Sweden)

    Lazarević Z.Ž.

    2009-01-01

    Full Text Available Barium-bismuth titanate, BaBi4Ti4O15 (BBT, a member of Aurivillius bismuth-based layer-structure perovskites, was prepared from stoichiometric amounts of barium titanate and bismuth titanate obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. The reaction mechanism of BaBi4Ti4O15 and the preparation and characteristics of BBT ceramic powders were studied using XRD, Raman spectroscopy, particle analysis and SEM. The Bi-layered perovskite structure of BaBi4Ti4O15 ceramic forms at 1100 °C for 4 h without a pre-calcination step. The microstructure of BaBi4Ti4O15 exhibits plate-like grains typical for the Bi-layered structured material and spherical and polygonal grains. The Ba2+ addition leads to changes in the microstructure development, particularly in the change of the average grain size.

  17. Aerosol deposition of (Cu,Ti) substituted bismuth vanadate films

    Energy Technology Data Exchange (ETDEWEB)

    Exner, Jörg, E-mail: Functional.Materials@Uni-Bayreuth.de [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany); Fuierer, Paul [Materials and Metallurgical Engineering Department, New Mexico Institute of Mining and Technology, Socorro, NM 87801 (United States); Moos, Ralf [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany)

    2014-12-31

    Bismuth vanadate, Bi{sub 4}V{sub 2}O{sub 11}, and related compounds with various metal (Me) substitutions, Bi{sub 4}(Me{sub x}V{sub 1−x}){sub 2}O{sub 11−δ}, show some of the highest ionic conductivities among the known solid oxide electrolytes. Films of Cu and Ti substituted bismuth vanadate were prepared by an aerosol deposition method, a spray coating process also described as room temperature impact consolidation. Resultant films, several microns in thickness, were dense with good adhesion to the substrate. Scanning electron microscopy and high temperature X-ray diffraction were used to monitor the effects of temperature on the structure and microstructure of the film. The particle size remained nano-scale while microstrain decreased rapidly up to 500 °C, above which coarsening and texturing increased rapidly. Impedance measurements of films deposited on inter-digital electrodes revealed an annealing effect on the ionic conductivity, with the conductivity exceeding that of a screen printed film, and approaching that of bulk ceramic. - Highlights: • Cu and Ti doped bismuth vanadate films were prepared by aerosol deposition (AD). • Dense 3–5 μm thick films were deposited on alumina, silicon and gold electrodes. • Annealing of the AD-layer increases the conductivity by 1.5 orders of magnitude. • Effect of temperature on structure and microstructure was investigated.

  18. Soluble Lead and Bismuth Chalcogenidometallates: Versatile Solders for Thermoelectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hao [Department; Son, Jae Sung [Department; School; Dolzhnikov, Dmitriy S. [Department; Filatov, Alexander S. [Department; Hazarika, Abhijit [Department; Wang, Yuanyuan [Department; Hudson, Margaret H. [Department; Sun, Cheng-Jun [Advanced; Chattopadhyay, Soma [Physical; Talapin, Dmitri V. [Department; Center

    2017-07-27

    Here we report the syntheses of largely unexplored lead and bismuth chalcogenidometallates in the solution phase. Using N2H4 as the solvent, new compounds such as K6Pb3Te6·7N2H4 were obtained. These soluble molecular compounds underwent cation exchange processes using resin chemistry, replacing Na+ or K+ by decomposable N2H5+ or tetraethylammonium cations. They also transformed into stoichiometric lead and bismuth chalcogenide nanomaterials with the addition of metal salts. Such a versatile chemistry led to a variety of composition-matched solders to join lead and bismuth chalcogenides and tune their charge transport properties at the grain boundaries. Solution-processed thin films composed of Bi0.5Sb1.5Te3 microparticles soldered by (N2H5)6Bi0.5Sb1.5Te6 exhibited thermoelectric power factors (~28 μW/cm K2) comparable to those in vacuum-deposited Bi0.5Sb1.5Te3 films. The soldering effect can also be integrated with attractive fabrication techniques for thermoelectric modules, such as screen printing, suggesting the potential of these solders in the rational design of printable and moldable thermoelectrics.

  19. Shape-controlled solvothermal synthesis of bismuth subcarbonate nanomaterials

    International Nuclear Information System (INIS)

    Cheng Gang; Yang Hanmin; Rong Kaifeng; Lu Zhong; Yu Xianglin; Chen Rong

    2010-01-01

    Much effort has been devoted to the synthesis of novel nanostructured materials because of their unique properties and potential applications. Bismuth subcarbonate ((BiO) 2 CO 3 ) is one of commonly used antibacterial agents against Helicobacter pylori (H. pylori). Different (BiO) 2 CO 3 nanostructures such as cube-like nanoparticles, nanobars and nanoplates, were fabricated from bismuth nitrate via a simple solvothermal method. The nanostructures were characterized by powder X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). It was found that the solvents and precursors have an influence on the morphologies of (BiO) 2 CO 3 nanostructures. The possible formation mechanism of different (BiO) 2 CO 3 nanostructures fabricated under different conditions was also discussed. - Graphical abstract: Different bismuth subcarbonate ((BiO) 2 CO 3 ) nanostructures were successfully synthesized by a simple solvothermal method. It was found that the solvents and precursors have an influence on the morphologies of (BiO) 2 CO 3 nanostructures.

  20. Bismuth Oxysulfide and Its Polymer Nanocomposites for Efficient Purification

    Directory of Open Access Journals (Sweden)

    Yidong Luo

    2018-03-01

    Full Text Available The danger of toxic organic pollutants in both aquatic and air environments calls for high-efficiency purification material. Herein, layered bismuth copper oxychalcogenides, BiCuSO, nanosheets of high photocatalytic activity were introduced to the PVDF (Polyvinylidene Fluoride. The fibrous membranes provide an easy, efficient, and recyclable way to purify organic pollutant. The physical and photophysical properties of the BiCuSO and its polymer composite were characterized by scanning electron microscopy (SEM, X-ray diffraction (XRD, ultraviolet-visible diffuse reflection spectroscopy (DRS, X-ray photoelectron spectroscopy (XPS, electron spin resonance (EPR. Photocatalysis of Congo Red reveals that the BiCuSO/PVDF shows a superior photocatalytic activity of a 55% degradation rate in 70 min at visible light. The high photocatalytic activity is attributed to the exposed active {101} facets and the triple vacant associates V B i ‴ V O • • V B i ‴ . By engineering the intrinsic defects on the surface of bismuth oxysulfide, high solar-driven photocatalytic activity can be approached. The successful fabrication of the bismuth oxysulfide and its polymer nanocomposites provides an easy and general approach for high-performance purification materials for various applications.

  1. Magnetostatic Interaction in Fe-Co Nanowires

    Directory of Open Access Journals (Sweden)

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  2. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  3. Study on corrosion test techniques in lead bismuth eutectic flow. Joint research report in JFY2002

    International Nuclear Information System (INIS)

    Takahashi, Minoru; Sekimoto, Hiroshi

    2003-03-01

    The evaluation of corrosion behaviors of core and structural materials in lead bismuth eutectic is one of the key issues for the utilization of lead bismuth eutectic as a coolant of the primary loops of lead bismuth cooled fast breeder reactors (FBRs) and the intermediate heat transport media of new-type steam generators of the sodium cooled FBRs. The purpose of the present study is to establish corrosion test techniques in lead bismuth eutectic flow. The techniques of steel corrosion test and oxygen control in flowing lead bismuth eutectic, and the technologies of a lead bismuth flow test at high temperature and high velocity were developed through corrosion test using a lead bismuth flow test loop of the Tokyo Institute of Technology in JFY2002. The major results are summarized as follows: (1) Techniques of fabrication, mount and rinse of corrosion specimens, measurement method of weight loss, and SEM/EDX analysis method have been established through lead bismuth corrosion test. (2) Weight losses were measured, corrosion and lead bismuth-adhered layers and eroded parts were observed in two 1000 hr-corrosion tests, and the results were compared with each other for twelve existing steels including ODS, F82H and SUH-3. (3) An oxygen sensor made of zirconia electrolyte structurally resistant to thermal stress and thermal shock was developed and tested in the lead bismuth flow loop. Good performance has been obtained. (4) An oxygen control method by injecting argon and hydrogen mixture gas containing steam into lead bismuth was applied to the lead bismuth flow loop, and technical issues for the development of the oxygen control method were extracted. (5) Technical measures for freezing and leakage of lead bismuth in the flow loop were accumulated. (6) Technical measures for flow rate decrease/blockage due to precipitation of oxide and corrosion products in a low temperature section of the lead bismuth flow loop were accumulated. (7) Electromagnetic flow meters with MI

  4. Enhanced ionized impurity scattering in nanowires

    Science.gov (United States)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  5. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  6. A single drug for Helicobacter pylori infection: first results with a new bismuth triple monocapsule

    NARCIS (Netherlands)

    de Boer, W. A.; van Etten, R. J.; Schneeberger, P. M.; Tytgat, G. N.

    2000-01-01

    In this pilot study we investigated the efficacy and tolerability of a new monocapsule that contains a bismuth compound, tetracycline, and metronidazole. If proven to be effective, this monotherapy would turn the well-accepted multidrug regimen of standard bismuth-based triple therapy into an easy

  7. Build-up enhancement of photoluminescence from phenylazomethine bismuth dendrimer using Bi(OTf)3

    Science.gov (United States)

    Kambe, Tetsuya; Imaoka, Shotaro; Imaoka, Takane; Yamamoto, Kimihisa

    2018-05-01

    Metal assembly to a dendrimer can provide various functionalities based on the branched structure. Here, we researched assembly phenomena of bismuth salts in the phenylazomethine dendrimer and achieved enhancement of emission intensity per metal unit by using Bi(OTf)3. This enhancement suggested increasing of Bi-N coordination bonds derived from the bismuth units in the dendrimer.

  8. Selective oxidation of propylene to acrolein by silica-supported bismuth molybdate catalysts

    DEFF Research Database (Denmark)

    Duc, Duc Truong; Ha, Hanh Nguyen; Fehrmann, Rasmus

    2011-01-01

    Silica-supported bismuth molybdate catalysts have been prepared by impregnation, structurally characterized and examined as improved catalysts for the selective oxidation of propylene to acrolein. Catalysts with a wide range of loadings (from 10 to 90 wt%) of beta bismuth molybdate (β-Bi2Mo2O9) w...

  9. PREFACE: Synthesis and integration of nanowires

    Science.gov (United States)

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  10. Nanowire NMOS Logic Inverter Characterization.

    Science.gov (United States)

    Hashim, Yasir

    2016-06-01

    This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

  11. Charge sharing and charge loss in a cadmium-zinc-telluride fine-pixel detector array

    International Nuclear Information System (INIS)

    Gaskin, J.A.; Sharma, D.P.; Ramsey, B.D.

    2003-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a cadmium-zinc-telluride multi-pixel detector is ideal for hard X-ray astrophysical observation. As part of on-going research at MSFC to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750 μm pitch), 1 mm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300 μm pitch). Future work will enable us to compare the simulated results for the finer array to measured values

  12. Structural, Mechanical and Thermodynamic Properties under Pressure Effect of Rubidium Telluride: First Principle Calculations

    Directory of Open Access Journals (Sweden)

    Bidai K.

    2017-06-01

    Full Text Available First-principles density functional theory calculations have been performed to investigate the structural, elastic and thermodynamic properties of rubidium telluride in cubic anti-fluorite (anti-CaF2-type structure. The calculated ground-state properties of Rb2Te compound such as equilibrium lattice parameter and bulk moduli are investigated by generalized gradient approximation (GGA-PBE that are based on the optimization of total energy. The elastic constants, Young’s and shear modulus, Poisson ratio, have also been calculated. Our results are in reasonable agreement with the available theoretical and experimental data. The pressure dependence of elastic constant and thermodynamic quantities under high pressure are also calculated and discussed.

  13. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Energy Technology Data Exchange (ETDEWEB)

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  14. High pressure and doping effects on the Curie temperature in chromium telluride

    International Nuclear Information System (INIS)

    Grazhdankina, N.P.; Bersenev, Yu.S.

    1976-01-01

    Results of an experimental investigation of the effect of hydrostatic pressure (up to 12 kbars) on the Curie temperature Tsub(c) of solid CrTsub(1-x)Xsub(x) solutions (X=Se, Sb) are presented for x concentration values up to 0.5. The baric coefficients γ=Tsub(c)sup(-1)(dTsub(c)/dP) for all alloys investigated are negative. However the γ(x) dependence is determined by the X alloy component and correspondingly by the nature of the compression which may be either isotropic (X=Se) or anisotropic (X=Sb). Possible mechanisms of exchange spin coupling in the alloys investigated are discussed on the basis of the data obtained. It is concluded that two types of exchange interactions coexist in chromium telluride: indirect exchange of localized electrons via the anion and interaction between collectivized electrons in the narrow 3d band energy determines the Curie temperature

  15. Trace analysis in cadmium telluride by heavy ion induced X-ray emission and by SIMS

    International Nuclear Information System (INIS)

    Scharager, C.; Stuck, R.; Siffert, P.; Cailleret, J.; Heitz, Ch.; Lagarde, G.; Tenorio, D.

    1979-01-01

    The possibilities of using both selective heavy ion induced X-ray emission and secondary ion mass spectroscopy (SIMS), for the identification of impurities present at low concentrations in cadmium telluride are examined. The relative concentrations of the impurities along CdTe crystals have been determined by exciting the X-ray emission of the elements in several slices with Ar and Kr ions and by comparing the relative characteristic X-ray emission yields. As a consequence of the quasimolecular inner shell ionization mechanism in heavy ion-atom collisions, Ar and Kr ions allow a strong excitation of the main impurities seen by SIMS namely Si, Cl and Ge, As, with only a minor contribution of Cd and Te. From the changes of the concentrations of the various impurities along the crystal, informations about segregation coefficients and compensation can be obtained

  16. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  17. First operation of cesium telluride photocathodes in the TTF injector RF gun

    CERN Document Server

    Sertore, D; Flöttmann, K; Stephan, F; Zapfe, K; Michelato, P

    2000-01-01

    During the run 1998/1999 a new injector based on a laser-driven RF gun was brought in operation at the TESLA Test Facility (TTF) linac at DESY, in order to produce the beam structure and quality required either by TeV collider and SASE FEL experiments. High quantum efficiency cesium telluride photocathodes, prepared at Milano and transferred to DESY, have been successfully operated in the RF gun. A bunch charge of 50 nC, only limited by space charge effects, was achieved. The photocathodes have shown an operative lifetime of several months. A new cathode surface finishing has showed a promising decrease of the photocathode dark current. Measurements of dark current, quantum efficiency and lifetime are reported.

  18. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Energy Technology Data Exchange (ETDEWEB)

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  19. Nanowire sensors and arrays for chemical/biomolecule detection

    Science.gov (United States)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  20. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    International Nuclear Information System (INIS)

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  1. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  2. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    Energy Technology Data Exchange (ETDEWEB)

    Fazaeli, Yousef; Feizi, Shahzad [Nuclear Science and Technology Research Institute (NSTRI), Radiation Application Research School, Karaj (Iran, Islamic Republic of); Zare, Hakimeh; Karimi, Shokufeh [Yazd University, Department of Physics, Yazd (Iran, Islamic Republic of); Rahighi, Reza [Sharif University of Technology, Department of Physics, Tehran (Iran, Islamic Republic of)

    2017-08-15

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with {sup 68}Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with {sup 68}Ga NPs ({sup 68}Ga rate at CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the {sup 68}Ga rate at CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The {sup 68}Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the {sup 68}Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of {sup 68}Ga radionuclide, the {sup 68}Ga rate at CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy. (orig.)

  3. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    Science.gov (United States)

    Fazaeli, Yousef; Zare, Hakimeh; Karimi, Shokufeh; Rahighi, Reza; Feizi, Shahzad

    2017-08-01

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with 68Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with 68Ga NPs (68Ga@ CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the 68Ga@ CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The 68Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the 68Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of 68Ga radionuclide, the 68Ga@ CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy.

  4. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  5. Nanowire sensor, sensor array, and method for making the same

    Science.gov (United States)

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  6. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  7. Thermodynamics Calculation and Experimental Study on Separation of Bismuth from a Bismuth Glance Concentrate Through a Low-Temperature Molten Salt Smelting Process

    Science.gov (United States)

    Yang, Jian-Guang; He, De-Wen; Tang, Chao-Bo; Chen, Yong-Ming; Sun, Ya-Hui; Tang, Mo-Tang

    2011-08-01

    The main purpose of this study is to characterize and separate bismuth from a bismuth glance concentrate through a low-temperature, sulfur-fixing smelting process. This article reports on a study conducted on the optimization of process parameters, such as Na2CO3 and zinc oxide wt pct in charging, smelting temperature, smelting duration on the bismuth yield, resultant crude bismuth grade, and sulfur-fixing rate. A maximum bismuth recovery of 97.31 pct, crude bismuth grade of 96.93 pct, and 98.23 pct sulfur-fixing rate are obtained when a charge (containing 63.50 wt pct of Na2CO3 and 22.50 wt pct of bismuth glance, as well as 5 pct in excess of the stoichiometric requirement of zinc oxide dosage) is smelted at 1000 K (727 °C) for 150 minutes. This smelting operation is free from atmospheric pollution because zinc oxide is used as the sulfur-fixing agent, which can capture sulfur from bismuth sulfide and form the more thermodynamic-stable compound, zinc sulfide. The solid residue is subjected to a mineral dressing operation to obtain suspension, which is filtered to produce a cake, representing the solid particles of zinc sulfide. Based on the results of the chemical content analysis of the as-resultant zinc sulfide, more than 93 pct zinc sulfide can be recovered, and the recovered zinc sulfide grade can reach 60.20 pct. This material can be sold as zinc sulfide concentrate or roasted to be regenerated as zinc oxide.

  8. Bioavailability and chronic toxicity of bismuth citrate to earthworm Eisenia andrei exposed to natural sandy soil.

    Science.gov (United States)

    Omouri, Zohra; Hawari, Jalal; Fournier, Michel; Robidoux, Pierre Yves

    2018-01-01

    The present study describes bioavailability and chronic effects of bismuth to earthworms Eisenia andrei using OECD reproduction test. Adult earthworms were exposed to natural sandy soil contaminated artificially by bismuth citrate. Average total concentrations of bismuth in soil recovered by HNO 3 digestion ranged from 75 to 289mg/kg. Results indicate that bismuth decreased significantly all reproduction parameters of Eisenia andrei at concentrations ≥ 116mg/kg. However, number of hatched cocoons and number of juveniles seem to be more sensitive than total number of cocoons, as determined by IC 50 ; i.e., 182, 123 and > 289mg/kg, respectively. Bismuth did not affect Eisenia andrei growth and survival, and had little effect on phagocytic efficiency of coelomocytes. The low immunotoxicity effect might be explained by the involvement of other mechanisms i.e. bismuth sequestered by metal-binding compounds. After 28 days of exposure bismuth concentrations in earthworms tissue increased with increasing bismuth concentrations in soil reaching a stationary state of 21.37mg/kg dry tissue for 243mg Bi/kg dry soil total content. Data indicate also that after 56 days of incubation the average fractions of bismuth available extracted by KNO 3 aqueous solution in soil without earthworms varied from 0.0051 to 0.0229mg/kg, while in soil with earthworms bismuth concentration ranged between 0.310-1.347mg/kg dry soil. We presume that mucus and chelating agents produced by earthworms and by soil or/and earthworm gut microorganisms could explain this enhancement, as well as the role of dermal and ingestion routes of earthworms uptake to soil contaminant. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  10. Moessbauer study of Fe-Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  11. Epitaxy of advanced nanowire quantum devices

    NARCIS (Netherlands)

    Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

    2017-01-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

  12. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  13. Functionalization of magnetic nanowires by charged biopolymers

    DEFF Research Database (Denmark)

    Magnin, D.; Callegari, V.; Mátéfi-Tempfli, Stefan

    2008-01-01

    We report on a facile method for the preparation of biocompatible and bioactive magnetic nanowires. The method consists of the direct deposition of polysaccharides by layer-by-layer (LbL) assembly onto a brush of metallic nanowires; obtained by electrodeposition of the metal within the nanopores ...

  14. Bismuth oxide nanotubes-graphene fiber-based flexible supercapacitors

    Science.gov (United States)

    Gopalsamy, Karthikeyan; Xu, Zhen; Zheng, Bingna; Huang, Tieqi; Kou, Liang; Zhao, Xiaoli; Gao, Chao

    2014-07-01

    Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics.Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm-2 (for a single electrode) and 17.3 mF cm-2 (for the whole device) at 0.1 mA cm-2, respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics. Electronic supplementary information (ESI) available: Equations and characterization. SEM images of GGO, XRD and XPS of Bi2O3 NTs, HRTEM images and EDX Spectra of Bi2O3 NT5-GF, CV curves of Bi2O3NT5-GF, Bi2O3 NTs and bismuth nitrate in three-electrode system (vs. Ag/AgCl). CV and GCD curves of Bi2O3 NT1-GF and Bi2O3 NT3-GF. See DOI: 10.1039/c4nr02615b

  15. Conduction mechanism in bismuth silicate glasses containing titanium

    International Nuclear Information System (INIS)

    Dult, Meenakshi; Kundu, R.S.; Murugavel, S.; Punia, R.; Kishore, N.

    2014-01-01

    Bismuth silicate glasses mixed with different concentrations of titanium dioxide having compositions xTiO 2 –(60−x)Bi 2 O 3 –40SiO 2 with x=0, 5, 10, 15 and 20 were prepared by the normal melt quench technique. The frequency dependence of the ac electrical conductivity of different compositions of titanium bismuth silicate glasses has been studied in the frequency range 10 −1 Hz to 10 MHz and in the temperature range 623–703 K. The temperature and frequency dependent conductivity is found to obey Jonscher's universal power law for all the compositions of titanium bismuth silicate glass system. The dc conductivity (σ dc ), so called crossover frequency (ω H ), and frequency exponent (s) have been estimated from the fitting of experimental data of ac conductivity with Jonscher's universal power law. Enthalpy to dissociate the cation from its original site next to a charge compensating center (H f ) and enthalpy of migration (H m ) have also been estimated. The conductivity data have been analyzed in terms of different theoretical models to determine the possible conduction mechanism. Analysis of the conductivity data and the frequency exponent shows that the correlated barrier hopping of electrons between Ti 3+ and Ti 4+ ions in the glasses is the most favorable mechanism for ac conduction. The temperature dependent dc conductivity has been analyzed in the framework of theoretical variable range hopping model (VRH) proposed by Mott which describe the hopping conduction in disordered semiconducting systems. The various polaron hopping parameters have also been deduced. Mott's VRH model is found to be in good agreement with experimental data and the values of inverse localization length of s-like wave function (α) obtained by this model with modifications suggested by Punia et al. are close to the ones reported for a number of oxide glasses

  16. Yttrium bismuth titanate pyrochlore mixed oxides for photocatalytic hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Merka, Oliver

    2012-10-18

    In this work, the sol-gel synthesis of new non-stoichiometric pyrochlore titanates and their application in photocatalytic hydrogen production is reported. Visible light response is achieved by introducing bismuth on the A site or by doping the B site by transition metal cations featuring partially filled d orbitals. This work clearly focusses on atomic scale structural changes induced by the systematical introduction of non-stoichiometry in pyrochlore mixed oxides and the resulting influence on the activity in photocatalytic hydrogen production. The materials were characterized in detail regarding their optical properties and their atomic structure. The pyrochlore structure tolerates tremendous stoichiometry variations. The non-stoichiometry in A{sub 2}O{sub 3} rich compositions is compensated by distortions in the cationic sub-lattice for the smaller Y{sup 3+} cation and by evolution of a secondary phase for the larger Bi{sup 3+} cation on the A site. For TiO{sub 2} rich compositions, the non-stoichiometry leads to a special vacancy formation in the A and optionally O' sites. It is shown that pyrochlore mixed oxides in the yttrium bismuth titanate system represent very active and promising materials for photocatalytic hydrogen production, if precisely and carefully tuned. Whereas Y{sub 2}Ti{sub 2}O{sub 7} yields stable hydrogen production rates over time, the bismuth richer compounds of YBiTi{sub 2}O{sub 7} and Bi{sub 2}Ti{sub 2}O{sub 7} are found to be not stable under irradiation. This drawback is overcome by applying a special co-catalyst system consisting of a precious metal core and a Cr{sub 2}O{sub 3} shell on the photocatalysts.

  17. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  18. Nanowire-decorated microscale metallic electrodes

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

    2008-01-01

    The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

  19. Diamond nanowires: fabrication, structure, properties, and applications.

    Science.gov (United States)

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Science.gov (United States)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  1. Preparation and Characterization of Tin Oxide Nanowires

    Directory of Open Access Journals (Sweden)

    A. Kabiri

    2013-12-01

    Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

  2. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  3. Solution combustion synthesis and characterization of nanosized bismuth ferrite

    Science.gov (United States)

    Sai Kumar, V. Sesha; Rao, K. Venkateswara; Krishnaveni, T.; Kishore Goud, A. Shiva; Reddy, P. Ranjith

    2012-06-01

    The present paper describes a simple method of nanosized BiFeO3 by the solution combustion synthesis using bismuth and iron nitrates as oxidizers and the combination fuel of citric acid and ammonium hydroxide, with fuel to oxidizer ratio (Ψ = 1) one. The X-ray Diffraction results indicated rhombohedral phase (R3m) with JCPDS data card no: 72-2035. The ferroelectric transition of the sample at 8310C was detected by differential thermal analysis. Thermal analysis was done by Thermal gravimetric-Differential thermal analyzer and obtained results were presented in this paper.

  4. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  5. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Science.gov (United States)

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  6. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Directory of Open Access Journals (Sweden)

    Ali Vazinishayan

    2018-06-01

    Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

  7. Investigation of corrosion, water reaction, polonium evaporation and bismuth resource in liquid metal lead-bismuth technology

    Energy Technology Data Exchange (ETDEWEB)

    Takano, Hideki; Takizuka, Takakazu [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Kitano, Teruaki [Mitsui Shipbuilding and Engineering Co. Ltd., Tokyo (Japan)

    2000-10-01

    Lead-bismuth is the first candidate material for liquid metal target find coolant of fueled blanket system in accelerator-driven system (ADS) studied at JAERI. Advantages of the lead-bismuth utilization are non-active material, very low capture cross section, low melting point of 125degC and high boiling point of 1670degC, and beside coolant void reactivity become negative. But problems are due to the high corrosivity to most of the structural materials and the corrosive data are scarcity. In this report, corrosivity, reaction with water, thermal-hydraulics, chemical toxicity etc. are studied by investigating some facilities utilized and researched really for lead or lead-bismuth. And, furthermore, polonium evaporation rate and bismuth resource are investigated. Main results obtained are as follows: (1) In a refinery, there are enough employment experience for liquid Pb-Bi in period of about 17 years and not corrosion for the thermal conductive materials (1Cr-0.5Mo steel) used under the condition of natural convection with temperature around 400degC. (2) In Russia, extensive experience in the use as Russian submarines and in R and D during about 50 years are available. And as a result, it will be able to lead approximately zero corrosion for Cr-Si materials by adjusting oxygen film with oxygen concentration control between 10{sup -7} to 10{sup -5}% mass. However, the corrosion data are not enough systematically collected involving them in radiation dose field. (3) In liquid-dropping experiment, it is shown that interaction between water and high temperature liquid Pb-Bi is reduced steeply with rising of atmosphere pressure. But, in order to design the second circuit removal model of ADS, the interaction should be evaluated by water continuous injection experiment. (4) Polonium forms PbPo in Pb-Bi, and the evaporation rate become less three factor than that of Po, and furthermore, the rate decreases in the atmosphere. The effects of Po on employee and environment

  8. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    KAUST Repository

    Baqais, Amal Ali Abdulallh; Curutchet, Antton; Ziani, Ahmed; Ait Ahsaine, Hassan; Sautet, Philippe; Takanabe, Kazuhiro; Le Bahers, Tangui

    2017-01-01

    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  9. Synthesis and characterization of bismuth alkaline titanate powders

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atorresh@ipn.mx [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Dominguez-Crespo, M.A. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Hernandez-Perez, M.A. [ESIQIE, Metalurgia, Instituto Politecnico Nacional, Mexico, D. F (Mexico); Garcia-Zaleta, D.S. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Brachetti-Sibaja, S.B. [CICATA-Altamira, Instituto Politecnico Nacional, Km. 14.5 Carretera Tampico Puerto Industrial Altamira, Altamira, Tamps. 89600 (Mexico); Instituto Tecnologico de Ciudad Madero, Av. 1o. de Mayo esq. Sor Juana Ines de la Cruz s/n Col. Los Mangos C.P.89440 Cd. Madero Tamaulipas (Mexico)

    2011-06-15

    In this work, samples of bismuth alkaline titanate, (K{sub 0.5}Na{sub 0.5}){sub (2-x/2)}Bi{sub (x/6)}TiO{sub 3}, (x = 0.05-0.75) have been prepared by conventional ceramic technique and molten salts. Metal oxides or carbonates powders were used as starting raw materials. The crystalline phase of the synthesized powders was identified by the X-ray diffraction (XRD) and particle morphology was characterized by scanning electron microscopy (SEM). Solid state reaction method was unsuccessful to obtain pellets. From XRD results, a rhombohedral structure was detected and the parameter lattice were estimated to be a = 5.5478 A and {alpha} = 59.48{sup o}. These parameters were used to refine the structure by Rietveld analysis. SEM results showed several morphologies. Apparently, bismuth is promoting the grain growth whose sizes vary from 30 nm to 180 nm It is expected that these materials can be utilized in practical applications as substitutes for lead zirconatetitanate (PZT)-based ceramics.

  10. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  11. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    KAUST Repository

    Baqais, Amal Ali Abdulallh

    2017-09-18

    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  12. Genotoxic effects of bismuth (III oxide nanoparticles by comet assay

    Directory of Open Access Journals (Sweden)

    Reecep Liman

    2015-06-01

    Full Text Available Bismuth oxide is one of the important transition metal oxides and it has been intensively studied due to their peculiar characteristics (semiconductor band gap, high refractive index, high dielectric permittivity, high oxygen conductivity, resistivity, photoconductivity and photoluminescence etc.. Therefore, it is used such as microelectronics, sensor technology, optical coatings, transparent ceramic glass manufacturing, nanoenergetic gas generator, biosensor for DNA hybridization, potential immobilizing platforms for glucose oxidase and polyphenol oxidase, fuel cells, a additive in paints, an astringent in a variety of medical creams and topical ointments, and for the determination of heavy metal ions in drinking water, mineral water and urine. In addition this, Bismuth (III oxide nanoparticles (BONPs are favorable for the biomolecules adsorption than regular sized particles because of their greater advantages and novel characteristics (much higher specific surface, greater surface free energy, and good electrochemical stability etc.. Genotoxic effects of BONPs were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of BONPs at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was also observed at all concentrations of BONPs except 12.5 ppm by Comet assay. The results were also analyzed statistically by using SPSS for Windows; Duncan’s multiple range test was performed. These result indicate that BONPs exhibit genotoxic activity in A. cepa root meristematic cells.

  13. Magnetic anisotropies in ultrathin bismuth iron garnet films

    International Nuclear Information System (INIS)

    Popova, Elena; Franco Galeano, Andres Felipe; Deb, Marwan; Warot-Fonrose, Bénédicte; Kachkachi, Hamid; Gendron, François; Ott, Frédéric

    2013-01-01

    Ultrathin bismuth iron garnet Bi 3 Fe 5 O 12 films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi 3 Fe 5 O 12 films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi 3 Fe 5 O 12 films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi 3 Fe 5 O 12 were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed

  14. Magnetic anisotropies in ultrathin bismuth iron garnet films

    Energy Technology Data Exchange (ETDEWEB)

    Popova, Elena, E-mail: popova@physique.uvsq.fr [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Franco Galeano, Andres Felipe [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Deb, Marwan [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS/Université de Versailles-Saint-Quentin, 45 Avenue des Etats-Unis, 78035 Versailles (France); Warot-Fonrose, Bénédicte [Centre d' Elaboration de Matériaux et d' Etudes Structurales (CEMES), CNRS, 29 rue Jeanne Marvig, 31055 Toulouse (France); Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS–Universidad de Zaragoza (Spain); Kachkachi, Hamid [Laboratoire PROcédés, Matériaux et Energie Solaire (PROMES), CNRS/Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 66860 Perpignan (France); Gendron, François [Institut des NanoSciences de Paris (INSP), CNRS/Université Pierre et Marie Curie-Paris 6, 4 place Jussieu, Boîte courrier 840, 75252 Paris Cedex 05 (France); Ott, Frédéric [Laboratoire Léon Brillouin (LLB), CNRS/CEA, Bâtiment 563, CEA Saclay, 91191 Gif sur Yvette Cedex (France); and others

    2013-06-15

    Ultrathin bismuth iron garnet Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi{sub 3}Fe{sub 5}O{sub 12} films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization. - Highlights: ► Ultrathin Bi{sub 3}Fe{sub 5}O{sub 12} films were grown epitaxially on structure-matching substrates. ► Magnetic properties of Bi{sub 3}Fe{sub 5}O{sub 12} were studied down to the thickness of 2.5 nm. ► Reorientation of easy magnetization axis as a function of film thickness was observed.

  15. Superconductivity in Bismuth. A New Look at an Old Problem.

    Science.gov (United States)

    Mata-Pinzón, Zaahel; Valladares, Ariel A; Valladares, Renela M; Valladares, Alexander

    2016-01-01

    To investigate the relationship between atomic topology, vibrational and electronic properties and superconductivity of bismuth, a 216-atom amorphous structure (a-Bi216) was computer-generated using our undermelt-quench approach. Its pair distribution function compares well with experiment. The calculated electronic and vibrational densities of states (eDOS and vDOS, respectively) show that the amorphous eDOS is about 4 times the crystalline at the Fermi energy, whereas for the vDOS the energy range of the amorphous is roughly the same as the crystalline but the shapes are quite different. A simple BCS estimate of the possible crystalline superconducting transition temperature gives an upper limit of 1.3 mK. The e-ph coupling is more preponderant in a-Bi than in crystalline bismuth (x-Bi) as indicated by the λ obtained via McMillan's formula, λc = 0.24 and experiment λa = 2.46. Therefore with respect to x-Bi, superconductivity in a-Bi is enhanced by the higher values of λ and of eDOS at the Fermi energy.

  16. System design study of small lead-bismuth cooled reactor

    International Nuclear Information System (INIS)

    Chikazawa, Yoshitaka; Hori, Toru; Konomura, Mamoru

    2003-07-01

    In phase II of the feasibility study of JNC, we will make a concept of a dispersion power source reactor with various requirements, such as economical competitiveness and safety. In the study of a small lead-bismuth cooled reactor, a concept whose features are long life core, inherent safety, natural convection of cooling system and steam generators in the reactor vessel has been designed since 2000. The investigations which have been done in 2002 are shown as follows; Safety analysis of UTOP considering uncertainty of reactivity. Possibility of reduction of number of control rods. Estimation of construction cost. Transient analyses of UTOP have been done in considering uncertainty of reactivity in order to show the inherent safety in the probabilistic method. And the inherent safety in UTOP is realized under the condition of considering uncertainty. Transient analyses of UTOP with various numbers of control rods have been done and it is suggested that there is possibility of reduction of the number of control rods considering accident managements. The method of cost estimation is a little modified. The cost of reactor vessel is estimated from that of medium sized lead-bismuth cooled reactor and the estimation of a purity control system is by coolant volume flow rate. The construction cost is estimated 850,000yen/kWe. (author)

  17. Electrodeposition of bismuth alloys by the controlled potential method

    International Nuclear Information System (INIS)

    Lopez Alvarez, F.A.

    1993-01-01

    We worked with the electrodeposition of three bismuth alloys, the composition of the first electrolyte was: 0.3 g/l. Bi; 20 g/l. Ni; and the conditions were pH = 5.2 - 5.6; T = 25 Centigrade degrees; current density 0.3 A / dm 2 - 6.6 A / dm 2 . Following alloy was between Bi - Pb, composition of the electrolyte was 3.18 g/l. Bi (metallic); 31.81 g/l. Pb (Pb(NO 3 ) 2 ) pH : 1; T = 20 Centigrade degrees; current density 10.20 A/dm 2 . The third electrolyte was Bi-Cu, its composition was: 20.89 g/l. Bi; (metallic) 63.54 g/l Cu (Cu(NO 3 ) 2 ) pH : 1.5 - 1.8; T = 25-30 Centigrade degrees; current density 1-2 A/dm 2 . The best results were obtained with the third electrolyte. The purpose of this work was to experiment with different parameters like temperature, pH and the electrolyte concentration to obtain a bismuth alloy. (Author)

  18. Epitaxy of advanced nanowire quantum devices

    Science.gov (United States)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  19. Platinum boride nanowires: Synthesis and characterization

    International Nuclear Information System (INIS)

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  20. Bending and tensile deformation of metallic nanowires

    International Nuclear Information System (INIS)

    McDowell, Matthew T; Leach, Austin M; Gall, Ken

    2008-01-01

    Using molecular statics simulations and the embedded atom method, a technique for bending silver nanowires and calculating Young's modulus via continuum mechanics has been developed. The measured Young's modulus values extracted from bending simulations were compared with modulus values calculated from uniaxial tension simulations for a range of nanowire sizes, orientations and geometries. Depending on axial orientation, the nanowires exhibit stiffening or softening under tension and bending as size decreases. Bending simulations typically result in a greater variation of Young's modulus values with nanowire size compared with tensile deformation, which indicates a loading-method-dependent size effect on elastic properties at sub-5 nm wire diameters. Since the axial stress is maximized at the lateral surfaces in bending, the loading-method-dependent size effect is postulated to be primarily a result of differences in nanowire surface and core elastic modulus. The divergence of Young's modulus from the bulk modulus in these simulations occurs at sizes below the range in which experiments have demonstrated a size scale effect on elastic properties of metallic nanowires. This difference indicates that other factors beyond native metallic surface properties play a role in experimentally observed nanowire elastic modulus size effects

  1. Helicobacter pylori second-line rescue therapy with levofloxacin- and bismuth-containing quadruple therapy, after failure of standard triple or non-bismuth quadruple treatments.

    Science.gov (United States)

    Gisbert, J P; Romano, M; Gravina, A G; Solís-Muñoz, P; Bermejo, F; Molina-Infante, J; Castro-Fernández, M; Ortuño, J; Lucendo, A J; Herranz, M; Modolell, I; Del Castillo, F; Gómez, J; Barrio, J; Velayos, B; Gómez, B; Domínguez, J L; Miranda, A; Martorano, M; Algaba, A; Pabón, M; Angueira, T; Fernández-Salazar, L; Federico, A; Marín, A C; McNicholl, A G

    2015-04-01

    The most commonly used second-line Helicobacter pylori eradication regimens are bismuth-containing quadruple therapy and levofloxacin-containing triple therapy, both offering suboptimal results. Combining bismuth and levofloxacin may enhance the efficacy of rescue eradication regimens. To evaluate the efficacy and tolerability of a second-line quadruple regimen containing levofloxacin and bismuth in patients whose previous H. pylori eradication treatment failed. This was a prospective multicenter study including patients in whom a standard triple therapy (PPI-clarithromycin-amoxicillin) or a non-bismuth quadruple therapy (PPI-clarithromycin-amoxicillin-metronidazole, either sequential or concomitant) had failed. Esomeprazole (40 mg b.d.), amoxicillin (1 g b.d.), levofloxacin (500 mg o.d.) and bismuth (240 mg b.d.) was prescribed for 14 days. Eradication was confirmed by (13) C-urea breath test. Compliance was determined through questioning and recovery of empty medication envelopes. Incidence of adverse effects was evaluated by questionnaires. 200 patients were included consecutively (mean age 47 years, 67% women, 13% ulcer). Previous failed therapy included: standard clarithromycin triple therapy (131 patients), sequential (32) and concomitant (37). A total of 96% took all medications correctly. Per-protocol and intention-to-treat eradication rates were 91.1% (95%CI = 87-95%) and 90% (95%CI = 86-94%). Cure rates were similar regardless of previous (failed) treatment or country of origin. Adverse effects were reported in 46% of patients, most commonly nausea (17%) and diarrhoea (16%); 3% were intense but none was serious. Fourteen-day bismuth- and levofloxacin-containing quadruple therapy is an effective (≥90% cure rate), simple and safe second-line strategy in patients whose previous standard triple or non-bismuth quadruple (sequential or concomitant) therapies have failed. © 2015 John Wiley & Sons Ltd.

  2. Diffusion of iron in β-iron telluride (Fe1.12Te) by Moessbauer spectroscopy and tracer method

    International Nuclear Information System (INIS)

    Magara, Masaaki; Tsuji, Toshihide; Naito, Keiji

    1993-01-01

    The diffusion coefficient of iron in a β-iron telluride (Fe 1.12 Te) polycrystalline sample was measured by Moessbauer diffusional line broadening method which relates to the collapse of coherence in gamma-ray photon by the atomic jump at local sites. The diffusion coefficient of iron along the c-axis in nearly single crystal of β-iron telluride was also measured by tracer technique which shows the results of an atom transport in long distance. The activation energies for the diffusion of iron in Fe 1.12 Te obtained by the Moessbauer spectroscopy and the tracer method were 91.5±5.4 and 106±23 kJ/mol, respectively. The diffusion coefficients of iron in β-iron telluride obtained by Moessbauer line broadening are in fair agreement with the values averaged from that along c-axis obtained by tracer method and that along a- and b-axes obtained from reaction rate constant between iron and tellurium by the previous study of the present authors. (orig.)

  3. Complexometric consequent titration of bismuth-titanium mixtures in the μg-region

    International Nuclear Information System (INIS)

    Schaefer, H.

    1975-01-01

    A quantitative method is described for the determination of microquantities of bismuth and titanium. Both metals are determined complexometrically with EDTA and potentiometric equivalence point indication using a Cu-ion sensitive electrode in a consequent titration. The analysis is conducted as back-titration with standard Cu-solution. The relative error of the determination is 0.8% for bismuth (50-100 μg) and for titanium (10-30 μg) at 1.0%. Under the chosen conditions, it is possible to determine as little as 15 μg bismuth and 5 μg titanium by means of this procedure. (author)

  4. Specificities of reactor coolant pumps units with lead and lead-bismuth coolant

    International Nuclear Information System (INIS)

    Beznosov, A.V.; Anotonenkov, M.A.; Bokov, P.A.; Baranova, V.S.; Kustov, M.S.

    2009-01-01

    The analysis results of impact of lead and lead-bismuth coolants specific properties on the coolants flow features in flow channels of the main and auxiliary circulating pumps are presented. Impossibility of cavitation initiation in flow channels of vane pumps pumping lead and lead-bismuth coolants was demonstrated. The experimental research results of discontinuity of heavy liquid metal coolant column were presented and conditions of gas cavitation initiation in coolant flow were discussed. Invalidity of traditional calculation methods of water and sodium coolants circulation pumps calculations for lead and lead-bismuth coolants circulation pumps was substantiated [ru

  5. Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

    Science.gov (United States)

    Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

    2018-03-01

    The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

  6. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Science.gov (United States)

    Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

    2018-06-01

    In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

  7. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  8. TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

    Science.gov (United States)

    Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

    2017-12-01

    Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

  9. Fabrication of nanowires and nanostructures

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  10. Semiconductor Nanowires: What's Next?

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  11. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  12. Perspectives of single cast nanowires technology

    International Nuclear Information System (INIS)

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  13. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  14. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  15. Electrospinning synthesis of superconducting BSCCO nanowires

    International Nuclear Information System (INIS)

    Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

    2013-01-01

    Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

  16. Template-based fabrication of nanowire-nanotube hybrid arrays

    International Nuclear Information System (INIS)

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  17. Biofunctionalization of zinc oxide nanowires for DNA sensory applications

    Directory of Open Access Journals (Sweden)

    Rudolph Bettina

    2011-01-01

    Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

  18. Chemical structure of bismuth compounds determines their gastric ulcer healing efficacy and anti-Helicobacter pylori activity.

    Science.gov (United States)

    Sandha, G S; LeBlanc, R; Van Zanten, S J; Sitland, T D; Agocs, L; Burford, N; Best, L; Mahoney, D; Hoffman, P; Leddin, D J

    1998-12-01

    The recognition of the role of Helicobacter pylori in the pathogenesis of peptic ulcer disease has led to renewed interest in bismuth pharmacology since bismuth compounds have both anti-Helicobacter pylori and ulcer healing properties. The precise chemical structure of current bismuth compounds is not known. This has hindered the development of new and potentially more efficacious formulations. We have created two new compounds, 2-chloro-1,3-dithia-2-bismolane (CDTB) and 1,2-[bis(1,3-dithia-2-bismolane)thio]ethane (BTBT), with known structure. In a rat model of gastric ulceration, BTBT was comparable to, and CDTB was significantly less effective than colloidal bismuth subcitrate in healing cryoprobe-induced ulcers. However, both BTBT and CDTB inhibited H. pylori growth in vitro at concentrations <1/10 that of colloidal bismuth subcitrate. The effects on ulcer healing are not mediated by suppression of acid secretion, pepsin inhibition, or prostaglandin production. Since all treated animals received the same amount of elemental bismuth, it appears that the efficacy of bismuth compounds varies with compound structure and is not simply dependent on the delivery of bismuth ion. Because the structure of the novel compounds is known, our understanding of the relationship of bismuth compound structure and to biologic activity will increase. In the future it may be possible to design other novel bismuth compounds with more potent anti-H. pylori and ulcer healing effects.

  19. Theoretical Investigation of Bismuth-Based Semiconductors for Photocatalytic Applications

    KAUST Repository

    Laradhi, Shaikhah

    2017-11-01

    Converting solar energy to clean fuel has gained remarkable attention as an emerged renewable energy resource but optimum efficiency in photocatalytic applications has not yet been reached. One of the dominant factors is designing efficient photocatalytic semiconductors. The research reveals a theoretical investigation of optoelectronic properties of bismuth-based metal oxide and oxysulfide semiconductors using highly accurate first-principles quantum method based on density functional theory along with the range-separated hybrid HSE06 exchange-correlation functional. First, bismuth titanate compounds including Bi12TiO20, Bi4Ti3O12, and Bi2Ti2O7 were studied in a combined experimental and theoretical approach to prove its photocatalytic activity under UV light. They have unique bismuth layered structure, tunable electronic properties, high dielectric constant and low electron and effective masses in one crystallographic direction allowing for good charge separation and carrier diffusion properties. The accuracy of the investigation was determined by the good agreement between experimental and theoretical values. Next, BiVO4 with the highest efficiency for oxygen evolution was investigated. A discrepancy between the experimental and theoretical bandgap was reported and inspired a systematic study of all intrinsic defects of the material and the corresponding effect on the optical and transport properties. A candidate defective structure was proposed for an efficient photocatalytic performance. To overcome the carrier transport limitation, a mild hydrogen treatment was also introduced. Carrier lifetime was enhanced due to a significant reduction of trap-assisted recombination, either via passivation of deep trap states or reduction of trap state density. Finally, an accurate theoretical approach to design a new family of semiconductors with enhanced optoelectronic properties for water splitting was proposed. We simulated the solid solutions Bi1−xRExCuOS (RE = Y, La

  20. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  1. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  2. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    International Nuclear Information System (INIS)

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Misra, Soumyadeep; Roca i Cabarrocas, Pere; Yu, Linwei

    2015-01-01

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs

  3. Status and future application of pilot lead-bismuth target circuit TC-1 for ADS

    Energy Technology Data Exchange (ETDEWEB)

    Ignatiev, S.; Leonchuk, M.; Orlov, Y.; Pankratov, D.; Reshetnikova, O.; Suvorov, G.; Zabudko, A. [Institute for Physics and Power Engineering, Obninsk (Russian Federation); Stepanov, V.; Klimov, N. [Experimental and Design Organization, Gidropress, Podolsk (Russian Federation); Hechanova, A.; Ma, J. [Nevada Univ., Las Vegas, NV (United States); Li, N. [Los Alamos National Lab., NM (United States); Gudowski, W. [International Science and Technology Center, Moscow (Russian Federation)

    2007-07-01

    A complicated evolution, status and future application of the pilot molten lead-bismuth target circuit of 1 MW proton beam power (TC-1) as an important part of a target-blanket accelerator driven system (ADS), that has been developed, created and twice tested under the auspice of the International Science and Technology Center (ISTC), is analyzed. The target complex TC-1 is a circulation lead-bismuth loop whose beam window is made of ferritic steel EP-823 (this steel was used in the past as material of fuel rods cladding in reactors cooled with lead-bismuth). At present TC-1 is operating at coolant temperature up to 300 C degrees and will be used to study different issues linked to the use of lead-bismuth: -) interaction with air, water and hydrogen, -) different regimes of flow, -) corrosion, -) filtering, or -) slag formation.

  4. Shielding property of bismuth glass based on MCNP 5 and WINXCOM simulated calculation

    International Nuclear Information System (INIS)

    Zhang Zhicheng; Zhang Jinzhao; Liu Ze; Lu Chunhai; Chen Min

    2013-01-01

    Background: Currently, lead glass is widely used as observation window, while lead is toxic heavy metal. Purpose: Non-toxic materials and their shielding effects are researched in order to find a new material to replace lead containing material. Methods: The mass attenuation coefficients of bismuth silicate glass were investigated with gamma-ray's energy at 0.662 MeV, 1.17 MeV and 1.33 MeV, respectively, by MCNP 5 (Monte Carlo) and WINXCOM program, and compared with those of the lead glass. Results: With attenuation factor K, shielding and mechanical properties taken into consideration bismuth glass containing 50% bismuth oxide might be selected as the right material. Dose rate distributions of water phantom were calculated with 2-cm and 10-cm thick glass, respectively, irradiated by 137 Cs and 60 Co in turn. Conclusion: Results show that the bismuth glass may replace lead glass for radiation shielding with appropriate energy. (authors)

  5. Corrosion by liquid lead and lead-bismuth: experimental results review and analysis

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jinsuo [Los Alamos National Laboratory

    2008-01-01

    Liquid metal technologies for liquid lead and lead-bismuth alloy are under wide investigation and development for advanced nuclear energy systems and waste transmutation systems. Material corrosion is one of the main issues studied a lot recently in the development of the liquid metal technology. This study reviews corrosion by liquid lead and lead bismuth, including the corrosion mechanisms, corrosion inhibitor and the formation of the protective oxide layer. The available experimental data are analyzed by using a corrosion model in which the oxidation and scale removal are coupled. Based on the model, long-term behaviors of steels in liquid lead and lead-bismuth are predictable. This report provides information for the selection of structural materials for typical nuclear reactor coolant systems when selecting liquid lead or lead bismuth as heat transfer media.

  6. Quantification of nanowire uptake by live cells

    KAUST Repository

    Margineanu, Michael B.

    2015-01-01

    attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic p

  7. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.; Chubykalo-Fesenko, O.

    2015-01-01

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain

  8. Optical properties of nanowire metamaterials with gain

    DEFF Research Database (Denmark)

    Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

    2016-01-01

    The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

  9. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    International Nuclear Information System (INIS)

    Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

    2015-01-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

  10. N-hydroxysuccinimide-mediated photoelectrooxidation of aliphatic alcohols based on cadmium telluride nanoparticles decorated graphene nanosheets

    International Nuclear Information System (INIS)

    Navaee, Aso; Salimi, Abdollah

    2013-01-01

    A simple nonenzymatic electrochemical protocol is proposed for the oxidation of aliphatic alcohols using formed N-hydroxysuccinimide (NHS) radical cation on the graphene nanosheets/L-cysteine/cadmium telluride quantum dot (QD) nanocomposite (GNs/Cys/CdTe) modified glassy carbon (GC) electrode. At first, graphene oxide (GO) is chemically synthesized from graphite after which Cys is covalently functionalized to GO through formation of amide bonds between carboxylic acid groups of GO and amine groups of Cys. The resulting GNs/Cys is used as a capping agent to synthesize CdTe QD nanoparticles. After the characterization of the as-made nanocomposite which confirmed the successful attachment of CdTe nanoparticles to the GNs, the ability of the GNs/Cys/CdTe modified GC electrode toward the nonenzymatic ethanol electrooxidation is examined in the presence of NHS as an effective mediating system. Our results revealed that the proposed system possess a good activity to NHS electrooxidation and subsequently, ethanol oxidation. Moreover, the GNs/Cys/CdTe modified electrode displayed a significant photoelectrocatalytic activity toward the ethanol oxidation upon illumination by visible light. The photoactive GNs/Cys/CdTe nanohybrid presented here showing favorable photoelectrochemical features for nonenzymatic aliphatic alcohols oxidation may hold great promise to the development of electrochemical sensors and biofuel cells

  11. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    International Nuclear Information System (INIS)

    Brunett, B.A.; Lund, J.C.; Van Scyoc, J.M.; Hilton, N.R.; Lee, E.Y.; James, R.B.

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors

  12. Study of a high-resolution, 3-D positioning cadmium zinc telluride detector for PET

    Science.gov (United States)

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-01-01

    This paper investigates the performance of 1 mm resolution Cadmium Zinc Telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3-D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06±0.39% at 511 keV throughout most the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44±0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78±0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes – as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system. PMID:21335649

  13. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET.

    Science.gov (United States)

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-03-21

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 ± 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 ± 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 ± 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes-as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  14. Heart imaging by cadmium telluride gamma camera European Program 'BIOMED' consortium

    CERN Document Server

    Scheiber, C; Chambron, J; Prat, V; Kazandjan, A; Jahnke, A; Matz, R; Thomas, S; Warren, S; Hage-Hali, M; Regal, R; Siffert, P; Karman, M

    1999-01-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3x3 mm, field of view: 15 cmx15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15 deg. tilt of the collimator with respect to the detector grid. A 16x16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16...

  15. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  16. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    Science.gov (United States)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  17. Fluorescence Stability of Mercaptopropionic Acid Capped Cadmium Telluride Quantum Dots in Various Biochemical Buffers.

    Science.gov (United States)

    Borse, Vivek; Kashikar, Adisha; Srivastava, Rohit

    2018-04-01

    Quantum dots are the semiconductor nanocrystals having unique optical and electronic properties. Quantum dots are category of fluorescent labels utilized for biological tagging, biosensing, bioassays, bioimaging and in vivo imaging as they exhibit very small size, signal brightness, photostability, tuning of light emission range, longer photoluminescence decay time as compared to organic dyes. In this work, we have synthesized and characterized mercaptopropionic acid capped cadmium telluride quantum dots (MPA-CdTe QDs) using hydrothermal method. The study further reports fluorescence intensity stability of quantum dots suspended in different buffers of varying concentration (1-100 mM), stored at various photophysical conditions. Fluorescence intensity values were reduced with increase in buffer concentration. When the samples were stored at room temperature in ambient light condition the quantum dots suspended in different buffers lost the fluorescence intensity after day 15 (except TRIS II). Fluorescence intensity values were found stable for more than 30 days when the samples were stored in dark condition. Samples stored in refrigerator displayed modest fluorescence intensity even after 300 days of storage. Thus, storage of MPA-CdTe QDs in refrigerator may be the suitable choice to maintain its fluorescence stability for longer time for further application.

  18. Cadmium-Zinc-Telluride photon detector for epithermal neutron spectroscopy--pulse height response characterisation

    International Nuclear Information System (INIS)

    Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Bracco, A.; D'Angelo, A.; Gorini, G.; Imberti, S.; Senesi, R.; Rhodes, N.J.; Schooneveld, E.M.

    2004-01-01

    The Resonance Detector Spectrometer was recently revised for neutron spectroscopic studies in the eV energy region. In this technique one makes use of a photon detector to record the gamma emission from analyser foils used as neutron-gamma converters. The pulse-height response of a Cadmium-Zinc-Telluride photon detector to neutron capture emission from 238 U and 197 Au analyser foils was characterised in the neutron energy range 1-200 eV. The experiment was performed on the VESUVIO spectrometer at the ISIS neutron-pulsed source. A biparametric data acquisition, specifically developed for these measurements, allowed the simultaneous measurements of both the neutron time of flight and γ pulse-height spectra. Through the analysis of the γ pulse-height spectra the main components of the signal associated with resonant and non-resonant neutron absorption were identified. It was also shown that, in principle, energy discrimination can be used to improve the signal to background ratio of the neutron time-of-flight measurement

  19. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe

    International Nuclear Information System (INIS)

    BRUNETT, BRUCE A.; DOYLE, BARNEY L.; JAMES, RALPH B.; VIZKELETHY, GYORGY; WALSH, DAVID S.

    1999-01-01

    The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated

  20. Investigation of the electrochemical deposition of thick layers of cadmium telluride

    International Nuclear Information System (INIS)

    Rousset, J.

    2007-04-01

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

  1. On the origin of near-IR luminescence in SiO{sub 2} glass with bismuth as the single dopant. Formation of the photoluminescent univalent bismuth silanolate by SiO{sub 2} surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Romanov, A.N., E-mail: alexey.romanov@list.ru; Haula, E.V.; Shashkin, D.P.; Vtyurina, D.N.; Korchak, V.N.

    2017-03-15

    Near infrared photoluminescent bismuth(I) silanolate centers ((≡Si-O){sub 3}Si–O-Bi) were prepared on the surface of SiO{sub 2} xerogel, by the treatment in the vapors of bismuth(I) chloride. The optical properties of these groups are almost identical to that of photoluminescent centers in the bulk SiO{sub 2} glasses with bismuth as the single dopant. - Highlights: • univalent bismuth silanolate can be prepared on SiO{sub 2} surface by treatment in BiCl vapors. • univalent bismuth silanolate is responsible for NIR photoluminescence in Bi-doped SiO{sub 2} glass. • univalent bismuth silanolate is the active center in laser, operating on Bi-doped SiO{sub 2} fiber.

  2. Study of irradiation defects in bismuth by electric transport measurements

    International Nuclear Information System (INIS)

    Le Goff, M.

    1984-01-01

    Pure monocrystalline bismuth is irradiated near 4K by electrons of different energies. Irradiation effects are measured by galvanomagnetic properties at low temperature. Frenkel pairs created during irradiation have a strong effect on carrier mobilities. The data are quantitatively analyzed assuming a rigid band model. After irradiation with 1 MeV electrons, each Frankel pair created corresponds to a total charge of 0.14 electrons. This result obtained by magnetoresistance and Hall effect is confirmed by Shubnikov-de Haas experiments. There is a linear variation between the excess carrier density (p-n) and the Frenkel pair concentration. The more important step of annealing is observed around 40-50 K. This step is attributed to interstitial migration. Resistivity presents a minimum at low temperature after irradiation with electrons of energy over 1.3 MeV. This is explained by virtual bound levels near the Fermi level. The Kondo effect bound to magnetic defects is discussed [fr

  3. Ni-rich precipitates in a lead bismuth eutectic loop

    International Nuclear Information System (INIS)

    Kikuchi, K.; Saito, S.; Hamaguchi, D.; Tezuka, M.

    2010-01-01

    Solidified LBE was sampled from the specimens, electro-magnetic pump, filter, drain valve and oxygen sensor at the JAEA Lead Bismuth Loop-1 (JLBL-1) where the structural material was made of SS316. The concentration of Ni, Fe and Cr in LBE were analyzed by the Inductive Coupled Plasma atomic emission spectrometer. It was concluded that the solution of Ni into LBE was not saturated although the concentration of Fe and Cr almost achieved to the values in the literature. A needle-type structure appeared on the surface of solidified LBE inside the tube specimens. It was found to be Ni-rich precipitates by X-ray analyses (Field Emission Scanning Electron Microscope, FE-SEM). LBE samples collected from a circulating loop after discharging did not show the amount of impurities equivalent to the LBE bulk property.

  4. Ni-rich precipitates in a lead bismuth eutectic loop

    Energy Technology Data Exchange (ETDEWEB)

    Kikuchi, K., E-mail: kikuchik@mx.ibaraki.ac.j [Ibaraki University, IQBRC, Tokai, Ibaraki 319-1106 (Japan); Saito, S.; Hamaguchi, D.; Tezuka, M. [J-PARC Center, JAEA, Tokai, Ibaraki 319-1195 (Japan)

    2010-03-15

    Solidified LBE was sampled from the specimens, electro-magnetic pump, filter, drain valve and oxygen sensor at the JAEA Lead Bismuth Loop-1 (JLBL-1) where the structural material was made of SS316. The concentration of Ni, Fe and Cr in LBE were analyzed by the Inductive Coupled Plasma atomic emission spectrometer. It was concluded that the solution of Ni into LBE was not saturated although the concentration of Fe and Cr almost achieved to the values in the literature. A needle-type structure appeared on the surface of solidified LBE inside the tube specimens. It was found to be Ni-rich precipitates by X-ray analyses (Field Emission Scanning Electron Microscope, FE-SEM). LBE samples collected from a circulating loop after discharging did not show the amount of impurities equivalent to the LBE bulk property.

  5. Ni-rich precipitates in a lead bismuth eutectic loop

    Science.gov (United States)

    Kikuchi, K.; Saito, S.; Hamaguchi, D.; Tezuka, M.

    2010-03-01

    Solidified LBE was sampled from the specimens, electro-magnetic pump, filter, drain valve and oxygen sensor at the JAEA Lead Bismuth Loop-1 (JLBL-1) where the structural material was made of SS316. The concentration of Ni, Fe and Cr in LBE were analyzed by the Inductive Coupled Plasma atomic emission spectrometer. It was concluded that the solution of Ni into LBE was not saturated although the concentration of Fe and Cr almost achieved to the values in the literature. A needle-type structure appeared on the surface of solidified LBE inside the tube specimens. It was found to be Ni-rich precipitates by X-ray analyses (Field Emission Scanning Electron Microscope, FE-SEM). LBE samples collected from a circulating loop after discharging did not show the amount of impurities equivalent to the LBE bulk property.

  6. Coolant Chemistry Control: Oxygen Mass Transport in Lead Bismuth Eutectic

    International Nuclear Information System (INIS)

    Weisenburger, A.; Mueller, G.; Bruzzese, C.; Glass, A.

    2015-01-01

    In lead-bismuth cooled transmutation systems, oxygen, dissolved in the coolant at defined quantities, is required for stable long-term operation by assuring the formation of protective oxide scales on structural steel surfaces. Extracted oxygen must be permanently delivered to the system and distributed in the entire core. Therefore, coolant chemistry control involves detailed knowledge on oxygen mass transport. Beside the different flow regimes a core might have stagnant areas at which oxygen delivery can only be realised by diffusion. The difference between oxygen transport in flow paths and in stagnant zones is one of the targets of such experiments. To investigate oxygen mass transport in flowing and stagnant conditions, a dedicated facility was designed based on computational fluid dynamics (CFD). CFD also was applied to define the position of oxygen sensors and ultrasonic Doppler velocimetry transducers for flow measurements. This contribution will present the test facility, design relevant CFD calculations and results of first tests performed. (authors)

  7. Bismuth Sodium Titanate Based Materials for Piezoelectric Actuators.

    Science.gov (United States)

    Reichmann, Klaus; Feteira, Antonio; Li, Ming

    2015-12-04

    The ban of lead in many electronic products and the expectation that, sooner or later, this ban will include the currently exempt piezoelectric ceramics based on Lead-Zirconate-Titanate has motivated many research groups to look for lead-free substitutes. After a short overview on different classes of lead-free piezoelectric ceramics with large strain, this review will focus on Bismuth-Sodium-Titanate and its solid solutions. These compounds exhibit extraordinarily high strain, due to a field induced phase transition, which makes them attractive for actuator applications. The structural features of these materials and the origin of the field-induced strain will be revised. Technologies for texturing, which increases the useable strain, will be introduced. Finally, the features that are relevant for the application of these materials in a multilayer design will be summarized.

  8. Lead-Bismuth technology ; corrosion resistance of structural materials

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ji Young; Park, Won Seok [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2000-02-01

    Lead-Bismuth (Pb-Bi) eutectic alloy was determined as a coolant material for the HYPER system being studied by KAERI. The Pb-Bi alloy as a coolant, has a number of the favorable thermo-physical and technological properties, while it is comparatively corrosive to the structural materials. It is necessary to solve this problem for providing a long failure-proof operation of the facilities with Pb-Bi coolant. It seems to be possible to maintain corrosion resistance on structural material up to 600 deg C by using of various technologies, but it needs more studies for application to large-scale NPPs. 22 refs., 11 figs., 7 tabs. (Author)

  9. Stimulated Raman scattering of sub-millimeter waves in bismuth

    Science.gov (United States)

    Kumar, Pawan; Tripathi, V. K.

    2007-12-01

    A high-power sub-millimeter wave propagating through bismuth, a semimetal with non-spherical energy surfaces, parametrically excites a space-charge mode and a back-scattered electromagnetic wave. The free carrier density perturbation associated with the space-charge wave couples with the oscillatory velocity due to the pump to derive the scattered wave. The scattered and pump waves exert a pondermotive force on electrons and holes, driving the space-charge wave. The collisional damping of the decay waves determines the threshold for the parametric instability. The threshold intensity for 20 μm wavelength pump turns out to be ˜2×1012 W/cm2. Above the threshold, the growth rate scales increase with ωo, attain a maximum around ωo=6.5ωp, and, after this, falls off.

  10. Radiopacity and histological assessment of Portland cement plus bismuth oxide.

    Science.gov (United States)

    Coutinho-Filho, Tauby; De-Deus, Gustavo; Klein, Leila; Manera, Gisele; Peixoto, Carla; Gurgel-Filho, Eduardo Diogo

    2008-12-01

    The present study evaluated the subcutaneous connective tissue reactions and the radiopacity of MTA, Portland cement (PC), and Portland cement plus bismuth oxide (BO). Forty rats were divided into 5 groups (n = 8 per group): A1: Control (empty capsule); A2: Pro-Root MTA; A3: PC; A4: PC + BO 1:1; and A5: PC + BO 2:1. Polyethylene tubes were filled with the test materials and standardized radiographic images were taken. Histological evaluation was done after 7 and 60 days. Student t test and Fisher's test were used in the statistical analysis (P A4 > A5 > A3. No differences were found for the tissue response in the 2 experimental periods. A positive correlation between BO concentration and radiopacity of PC was determined. The histological evaluation suggests that all studied materials were biocompatible at 7 and 60 days.

  11. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  12. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  13. Silver Nanowire Arrays : Fabrication and Applications

    OpenAIRE

    Feng, Yuyi

    2016-01-01

    Nanowire arrays have increasingly received attention for their use in a variety of applications such as surface-enhanced Raman scattering (SERS), plasmonic sensing, and electrodes for photoelectric devices. However, until now, large scale fabrication of device-suitable metallic nanowire arrays on supporting substrates has seen very limited success. This thesis describes my work rst on the development of a novel successful processing route for the fabrication of uniform noble metallic (e.g. A...

  14. Optical Properties of Rotationally Twinned Nanowire Superlattices

    DEFF Research Database (Denmark)

    Bao, Jiming; Bell, David C.; Capasso, Federico

    2008-01-01

    We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc...... a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering....

  15. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  16. Electrodeposition of rhenium-tin nanowires

    International Nuclear Information System (INIS)

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  17. Study of bismuth minerals belonging to the mineralogical collection from the National Museum

    International Nuclear Information System (INIS)

    Baptista, A.; Baptista, N.R.

    1991-09-01

    With the purpose of searching the presence of Tellurium minerals in the Ouro Preto-Mariana country, Minas Gerais State, and considering the existence of a great number of minerals in which this element come across allied with Bismuth, samples of the mineralogical collection of the Museu Nacional, proceeding that region and classified as Bismuth minerals were studied by X-ray fluorescence analysis and diffractometric analysis. In this report the results of this research are presented. (Author)

  18. An acclerator-based installation of small power with the lead-bismuth coolant

    Energy Technology Data Exchange (ETDEWEB)

    Gorshkov, V.T.; Yefimov, E.I.; Novikova, N.N. [Research and Development Bereau, Podolsk (Russian Federation)] [and others

    1995-10-01

    The structure of the accelerator-based installation is described that includes the subcritical reactor-blanket with power 15 MW(h) cooled with lead-bismuth, the lead-bismuth flow target where a beam of {alpha}-particle is injected, the equipment of a primary and secondary curcuits. Some results of calculations and estimations are discussed that have been carried out to justify the target and blanket constructions. Some main characteristics of the installation are presented.

  19. Bismuth oxide nanorods based immunosensor for mycotoxin detection

    Energy Technology Data Exchange (ETDEWEB)

    Solanki, Pratima R., E-mail: pratimarsolanki@gmail.com [DST Centre for Biomolecular Electronics, CSIR-National Physical Laboratory, K.S. Krishnan Marg, New Delhi (India); Special Centre for Nano Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Singh, Jay [DST Centre for Biomolecular Electronics, CSIR-National Physical Laboratory, K.S. Krishnan Marg, New Delhi (India); Department of Applied Chemistry and Polymer Technology, Delhi Technological University, Shahbad Daulatpur, Main Bawana Road, Delhi 110042 (India); Rupavali, Bharti [DST Centre for Biomolecular Electronics, CSIR-National Physical Laboratory, K.S. Krishnan Marg, New Delhi (India); Tiwari, Sachchidanand [Special Centre for Nano Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Malhotra, Bansi D., E-mail: bansi.malhotra@gmail.com [DST Centre for Biomolecular Electronics, CSIR-National Physical Laboratory, K.S. Krishnan Marg, New Delhi (India); Department of Biotechnology, Delhi Technological University, Shahbad Daulatpur, Main Bawana Road, Delhi 110042 (India)

    2017-01-01

    We report results of the studies relating to fabrication of an efficient immunosensor based on bismuth oxide nanorods (nBi{sub 2}O{sub 3}), electrophoretically deposited onto indium-tin-oxide (ITO) coated glass substrate. This immunosensor was fabricated by immobilization of anti-aflatoxin monoclonal antibodies (Ab-AFB1) and bovine serum albumin (BSA) for aflatoxin B1 detection. The structural and morphological studies of n-Bi{sub 2}O{sub 3} have been carried out by XRD, UV–vis spectrophotometer; SEM, AFM and FTIR. It was found that the nBi{sub 2}O{sub 3} provided improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The results of electrochemical response studies of this BSA/Ab-AFB1/nBi{sub 2}O{sub 3}/ITO immunosensor revealed good linearity in the range of 1–70 ng dL{sup −1} with low detection limit of 8.715 ng/dL, improved sensitivity of 1.132 μA/(ng/dL cm{sup −2}), regression coefficient R{sup 2} of 0.918 and reproducibility of > 11 times. The association constant for the BSA/Ab-AFB1/nBi{sub 2}O{sub 3}/ITO immunosensor was determined as 7.318 ng/dL. - Highlights: • Use of Bismuth oxide nanorods for aflatoxin B1 detection. • It improved the electrochemical properties. • First report on nBi{sub 2}O{sub 3} for mycotoxin detection.

  20. Magnetic properties of the binary Nickel/Bismuth alloy

    Energy Technology Data Exchange (ETDEWEB)

    Keskin, Mustafa; Şarlı, Numan, E-mail: numansarli82@gmail.com

    2017-09-01

    Highlights: • We model and investigate the magnetic properties of the Ni/Bi alloy within the EFT. • Magnetizations of the Ni/Bi alloy are observed as Bi1 > Bi2 > Ni/Bi > Ni at T < Tc. • Magnetization of the Bi1 is dominant and Ni is at least dominant T < Tc. • Total magnetization of the Ni/Bi alloy is close to those of Ni at T < Tc. • Hysteresis curves are overlap at T < 0.1 and they behave separately at T > 0.1. - Abstract: Magnetic properties of the binary Nickel/Bismuth alloy (Ni/Bi) are investigated within the effective field theory. The Ni/Bi alloy has been modeled that the rhombohedral Bi lattice is surrounded by the hexagonal Ni lattice. According to lattice locations, Bi atoms have two different magnetic properties. Bi1 atoms are in the center of the hexagonal Ni atoms (Ni/Bi1 single layer) and Bi2 atoms are between two Ni/Bi1 bilayers. The Ni, Bi1, Bi2 and Ni/Bi undergo a second-order phase transition from the ferromagnetic phase to paramagnetic phase at Tc = 1.14. The magnetizations of the Ni/Bi alloy are observed as Bi1 > Bi2 > Ni/Bi > Ni at T < Tc; hence the magnetization of the Bi1 is dominant and Ni is at least dominant. However, the total magnetization of the Ni/Bi alloy is close to magnetization of the Ni at T < Tc. The corcivities of the Ni, Bi1, Bi2 and Ni/Bi alloy are the same with each others, but the remanence magnetizations are different. Our theoretical results of M(T) and M(H) of the Ni/Bi alloy are in quantitatively good agreement with the some experimental results of binary Nickel/Bismuth systems.

  1. Constricted nanowire with stabilized magnetic domain wall

    International Nuclear Information System (INIS)

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  2. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  3. Reversal modes in asymmetric Ni nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Leighton, B.; Pereira, A. [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Escrig, J., E-mail: jescrigm@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avda. Ecuador 3493, 917-0124 Santiago (Chile)

    2012-11-15

    We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed. - Highlights: Black-Right-Pointing-Pointer Asymmetry strongly modifies the magnetic behavior of a wire. Black-Right-Pointing-Pointer Very asymmetric nanowires reverse their magnetization by a transverse domain wall. Black-Right-Pointing-Pointer An alternative method to detect the presence of magnetic drops is proposed. Black-Right-Pointing-Pointer Tailoring the reversal mode in asymmetric nanowires can be useful for potential applications.

  4. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    Directory of Open Access Journals (Sweden)

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  5. Studies of corrosion resistance of Japanese steels in liquid lead-bismuth

    International Nuclear Information System (INIS)

    Kamata, Kin-ya; Ono, Hiroshi; Kitano, Teruaki; Ono, Mikinori

    2003-01-01

    Liquid lead-bismuth has attractive characteristics as a coolant in future fast reactors and Accelerator Driven Sub-critical Systems (ADS) applications. The corrosion behavior of structural materials in lead-bismuth eutectic is one of key problems in developing nuclear power plants and installations using lead-bismuth coolant. Our experiences with heat exchangers using liquid lead-bismuth and the results of corrosion tests of Japanese steels are reported in this paper. A series of corrosion tests was carried out in collaboration with the Institute of Physics and Power Engineering (IPPE). Test specimens of various Japanese steels were exposed in a non-isothermal forced circulation loop. The influence of maximum temperature and oxygen content in lead bismuth were chosen for study as the primary causes of corrosion in Japanese steels. After the corrosion tests, corrosion behavior was analyzed by visual inspection, measurement of weight loss and metallurgical examination of the microstructure of the corroded zone. The corrosion mechanism in liquid lead bismuth is discussed on the basis of the metallurgical examination of the corroded zone. (author)

  6. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  7. Evaluation of the strength and radiopacity of Portland cement with varying additions of bismuth oxide.

    Science.gov (United States)

    Saliba, E; Abbassi-Ghadi, S; Vowles, R; Camilleri, J; Hooper, S; Camilleri, J

    2009-04-01

    To study the effect of addition of various proportions of bismuth oxide on compressive strength and radiopacity of Portland cement. The compressive strength of white Portland cement and cement replaced with 10, 15, 20, 25 and 30% bismuth oxide was evaluated by testing cylinders 6 mm in diameter and 12 mm high. Twelve cylinders were tested for each material under study. The radiopacity of the cements tested was evaluated using an aluminium step-wedge and densitometer. The optical density was compared with the relevant thickness of aluminium (Al). Statistical analysis was performed using Analysis of Variance (ANOVA) with P = 0.05 and Tukey test to perform multiple comparison tests. Various additions of bismuth oxide had no significant effect on the strength of the material when compared with the unmodified Portland cement (P > 0.05). The radiopacity of the cements tested ranged from 2.02 mm Al for Portland cement to 9.79 mm Al for the highest bismuth replacement. Addition of bismuth oxide did not affect the compressive strength of Portland cement. All the bismuth oxide cement mixtures had radio-opacities higher than 3 mm thickness of aluminium.

  8. Extreme Pressure Synergistic Mechanism of Bismuth Naphthenate and Sulfurized Isobutene Additives

    Science.gov (United States)

    Xu, Xin; Hu, Jianqiang; Yang, Shizhao; Xie, Feng; Guo, Li

    A four-ball tester was used to evaluate the tribological performances of bismuth naphthenate (BiNap), sulfurized isobutene (VSB), and their combinations. The results show that the antiwear properties of BiNap and VSB are not very visible, but they possess good extreme pressure (EP) properties, particularly sulfur containing bismuth additives. Synergistic EP properties of BiNap with various sulfur-containing additives were investigated. The results indicate that BiNap exhibits good EP synergism with sulfur-containing additives. The surface analytical tools, such as X-ray photoelectron spectrometer (XPS) scanning electron microscope (SEM) and energy dispersive X-ray (EDX), were used to investigate the topography, composition contents, and depth profile of some typical elements on the rubbing surface. Smooth topography of wear scar further confirms that the additive showed good EP capacities, and XPS and EDX analyzes indicate that tribochemical mixed protective films composed of bismuth, bismuth oxides, sulfides, and sulfates are formed on the rubbing surface, which improves the tribological properties of lubricants. In particular, a large number of bismuth atoms and bismuth sulfides play an important role in improving the EP properties of oils.

  9. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  10. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  11. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    International Nuclear Information System (INIS)

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  12. Extraction of lanthanide elements and bismuth in molten lithium chloride-liquid bismuth-lithium alloy system

    International Nuclear Information System (INIS)

    Harada, Makoto; Adachi, Motonari; Kai, Yuichi; Koike, Kenichi

    1987-01-01

    The equilibrium distributions of neodymium and samarium between molten LiCl and liquid Bi-Li alloy were measured in a wide range of Li-mole fraction in the alloy phase, X Li . These lanthanide elements were extracted through redox reactions. In high X Li range, X Li > 0.03, the distributions of neodymium and bismuth in the salt phase increased markedly. The anomalous increase is attributed to the formation of the compound comprized of Nd, Li, Bi and oxygen in the salt phase. The reaction processes in samarium and neodymium were very fast and the extraction rates are controlled by the diffusion processes of the solutes and metallic lithium. (author)

  13. Long-range magnetostatic interactions in arrays of nanowires

    CERN Document Server

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  14. A superconducting nanowire can be modeled by using SPICE

    Science.gov (United States)

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  15. Synthesis and characterization of Au incorporated Alq3 nanowires

    Science.gov (United States)

    Khan, Mohammad Bilal; Ahmad, Sultan; Parwaz, M.; Rahul, Khan, Zishan H.

    2018-05-01

    We report the synthesis and characterization of pure and Au incorporated Alq3 nanowires. These nanowires are synthesized using thermal vapor transport method. The luminescence intensity of Au incorporated Alq3 nanowires are recorded to be higher than that of pure Alq3 nanowires, which is found to increase with the increase in Au concentration. Fluorescence quenching is also observed when Au concentration is increased beyond the certain limit.

  16. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Science.gov (United States)

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  17. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  18. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  19. Neutron activation determination of impurities in high-purity bismuth with separation of matrix in form of hydroxide

    International Nuclear Information System (INIS)

    Artyukhin, P.I.; Shavinskij, B.M.; Mityakin, Yu.L.

    1979-01-01

    The technique of neutron activation determination of 15 impurity elements (Au, Ag, Ba, Cd, Co, Cs, Cu, Hg, K, Na, Ni, Se, Sr, Te, Zn) in high-purity bismuth (impurity content is approximately 10 -6 -10 -10 %) is presented. Bismuth hydroxide precipitation by ammonia from nitric acid solutions was used to separate bismuth from alkali, alkaline earth metals and elements forming stable ammines. Gold, selenium and tellurium are isolated in the form of metals at reduction by muriatic hydrazine. Results of analyzing two samples of special purity bismuth are presented. Neutron flux comprised 0.8-1x10 13 n/cm 2 xs. Radiation time was equal to 90 hours

  20. Nanowires: properties, applications and synthesis via porous anodic ...

    Indian Academy of Sciences (India)

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  1. Failure mechanisms and electromechanical coupling in semiconducting nanowires

    Directory of Open Access Journals (Sweden)

    Peng B.

    2010-06-01

    Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

  2. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  3. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  4. Quantification of nanowire uptake by live cells

    KAUST Repository

    Margineanu, Michael B.

    2015-05-01

    Nanostructures fabricated by different methods have become increasingly important for various applications at the cellular level. In order to understand how these nanostructures “behave” and for studying their internalization kinetics, several attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic pH-dependent dye pHrodo™ Red, covalently bound to the aminosilane surface. Time-lapse live imaging of human colon carcinoma HCT 116 cells interacting with the labeled iron nanowires is performed for 24 hours. As the pHrodo™ Red conjugated nanowires are non-fluorescent outside the cells but fluoresce brightly inside, internalized nanowires are distinguished from non-internalized ones and their behavior inside the cells can be tracked for the respective time length. A machine learning-based computational framework dedicated to automatic analysis of live cell imaging data, Cell Cognition, is adapted and used to classify cells with internalized and non-internalized nanowires and subsequently determine the uptake percentage by cells at different time points. An uptake of 85 % by HCT 116 cells is observed after 24 hours incubation at NW-to-cell ratios of 200. While the approach of using pHrodo™ Red for internalization studies is not novel in the literature, this study reports for the first time the utilization of a machine-learning based time-resolved automatic analysis pipeline for quantification of nanowire uptake by cells. This pipeline has also been used for comparison studies with nickel nanowires coated with APTES and labeled with pHrodo™ Red, and another cell line derived from the cervix carcinoma, HeLa. It has thus the potential to be used for studying the interaction of different types of nanostructures with potentially any live cell types.

  5. Processing and characterization of new oxy-sulfo-telluride glasses in the Ge-Sb-Te-S-O system

    International Nuclear Information System (INIS)

    Smith, C.; Jackson, J.; Petit, L.; Rivero-Baleine, C.; Richardson, K.

    2010-01-01

    New oxy-sulfo-telluride glasses have been prepared in the Ge-Sb-Te-S-O system employing a two-step melting process which involves the processing of a chalcogenide glass (ChG) and subsequent melting with TeO 2 or Sb 2 O 3 . The progressive incorporation of O at the expense of S was found to increase the density and the glass transition temperature and to decrease the molar volume of the investigated oxy-sulfo-telluride glasses. We also observed a shift of the vis-NIR cut-off wavelength to longer wavelength probably due to changes in Sb coordination within the glass matrix and overall matrix polarizability. Using Raman spectroscopy, correlations have been shown between the formation of Ge- and Sb-based oxysulfide structural units and the S/O ratio. Lastly, two glasses with similar composition (Ge 20 Sb 6 S 64 Te 3 O 7 ) processed by melting the Ge 23 Sb 7 S 70 glass with TeO 2 or the Ge 23 Sb 2 S 72 Te 4 glass with Sb 2 O 3 were found to have slightly different physical, thermal, optical and structural properties. These changes are thought to result mainly from the higher moisture content and sensitivity of the TeO 2 starting materials as compared to that of the Sb 2 O 3 . - Graphical abstract: In this paper, we discuss our most recent findings on the processing and characterization of new ChG glasses prepared with small levels of Te, melted either with TeO 2 or Sb 2 O 3 powders. We explain how these new oxy-sulfo-telluride glasses are prepared and we correlate the physical, thermal and optical properties of the investigated glasses to the structure changes induced by the addition of oxygen in the Ge-Sb-S-Te glass network.

  6. Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

    International Nuclear Information System (INIS)

    Bojsen, J.

    1985-01-01

    The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

  7. A Fumonisins Immunosensor Based on Polyanilino-Carbon Nanotubes Doped with Palladium Telluride Quantum Dots

    Science.gov (United States)

    Masikini, Milua; Mailu, Stephen N.; Tsegaye, Abebaw; Njomo, Njagi; Molapo, Kerileng M.; Ikpo, Chinwe O.; Sunday, Christopher Edozie; Rassie, Candice; Wilson, Lindsay; Baker, Priscilla G. L.; Iwuoha, Emmanuel I.

    2015-01-01

    An impedimetric immunosensor for fumonisins was developed based on poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes doped with palladium telluride quantum dots onto a glassy carbon surface. The composite was assembled by a layer-by-layer method to form a multilayer film of quantum dots (QDs) and poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes (PDMA-MWCNT). Preparation of the electrochemical immunosensor for fumonisins involved drop-coating of fumonisins antibody onto the composite modified glassy carbon electrode. The electrochemical impedance spectroscopy response of the FB1 immunosensor (GCE/PT-PDMA-MWCNT/anti-Fms-BSA) gave a linear range of 7 to 49 ng L−1 and the corresponding sensitivity and detection limits were 0.0162 kΩ L ng−1 and 0.46 pg L−1, respectively, hence the limit of detection of the GCE/PT-PDMA-MWCNT immunosensor for fumonisins in corn certified material was calculated to be 0.014 and 0.011 ppm for FB1, and FB2 and FB3, respectively. These results are lower than those obtained by ELISA, a provisional maximum tolerable daily intake (PMTDI) for fumonisins (the sum of FB1, FB2, and FB3) established by the Joint FAO/WHO expert committee on food additives and contaminants of 2 μg kg−1 and the maximum level recommended by the U.S. Food and Drug Administration (FDA) for protection of human consumption (2–4 mg L−1). PMID:25558993

  8. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    Science.gov (United States)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  9. Spectroscopic, microscopic, and internal stress analysis in cadmium telluride grown by close-space sublimation

    International Nuclear Information System (INIS)

    Manciu, Felicia S.; Salazar, Jessica G.; Diaz, Aryzbe; Quinones, Stella A.

    2015-01-01

    High quality materials with excellent ordered structure are needed for developing photovoltaic and infrared devices. With this end in mind, the results of our research prove the importance of a detailed, comprehensive spectroscopic and microscopic analysis in assessing cadmium telluride (CdTe) characteristics. The goal of this work is to examine not only material crystallinity and morphology, but also induced stress in the deposit material. A uniform, selective growth of polycrystalline CdTe by close-space sublimation on patterned Si(111) and Si(211) substrates is demonstrated by scanning electron microscopy images. Besides good crystallinity of the samples, as revealed by both Raman scattering and Fourier transform infrared absorption investigations, the far-infrared transmission data also show the presence of surface optical phonon modes, which is direct evidence of confinement in such a material. The qualitative identification of the induced stress was achieved by performing confocal Raman mapping microscopy on sample surfaces and by monitoring the existence of the rock-salt and zinc-blende structural phases of CdTe, which were associated with strained and unstrained morphologies, respectively. Although the induced stress in the material is still largely due to the high lattice mismatch between CdTe and the Si substrate, the current results provide a direct visualization of its partial release through the relaxation effect at crystallite boundaries and of preferential growth directions of less strain. Our study, thus offers significant value for improvement of material properties, by targeting the needed adjustments in the growth processes. - Highlights: • Assessing the characteristics of CdTe deposited on patterned Si substrates • Proving the utility of confocal Raman microscopy in monitoring the induced stress • Confirming the partial stress release through the grain boundary relaxation effect • Demonstrating the phonon confinement effect in low

  10. The crystal structures and powder diffraction patterns of the uranium tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Snyder, R.L. (State Univ. of New York, Alfred, NY (USA). Inst. of Ceramic Superconductivity); Nichols, M.C.; Boehme, D.R. (Sandia National Labs., Livermore, CA (USA))

    1990-10-03

    A critical review of all of the reported structures and powder diffraction patterns in the uranium telluride system has been undertaken. Structures that are correct: Cubic -- UTe: no experimental pattern exists. Retain calculated 15--865. Cubic --U{sub 3}Te{sub 4}: retain the poor quality 12--610 but adopt the pattern calculated here. Cubic U{sub 2}Te{sub 3}: no experimental pattern exists. Adopt pattern calculated here. Orthorhombic UTe{sub 2}: Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Orthorhombic {beta}UTe{sub 3}: Adopt pattern calculated here. Orthorhombic UTe{sub 5}: Adopt the new pattern of Boehme et al. Structures in need of refinement: Orthorhombic U{sub 2}Te{sub 3}:Adopt pattern calculated here over 34--807. Hexagonal U{sub 7}Te{sub 12}: Adopt pattern calculated here but retain 24--1368. Orthorhombic UTe{sub 1.78}: Adopt pattern calculated here and retain our modified 21--1404 reported for U{sub 4}Te{sub 7}. Orthorhombic UTe{sub 2.5}: Adopt pattern calculated here. Orthorhombic UTe{sub 3.4}: Accept recent pattern of Boehme et al. Phases for which no structures or reliable patterns exist: Orthorhombic U{sub 3}Te{sub 4}: no published pattern. Tetragonal U{sub 3}Te{sub 5}: three patterns 21--1407, 34--766 and 34--896 exit but all are of very poor quality. Phases which probably do not exist: Tetragonal UTe{sub 1.78}, Tetragonal UTe{sub 2}, Cubic UTe{sub 2} U{sub 3}Te{sub 7}(21--1402), U{sub 3}Te{sub 8}(21--1406).

  11. Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

    Directory of Open Access Journals (Sweden)

    Josef Pola

    2009-03-01

    Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  12. Reaction of 1-bromo-3-chloropropane with tellurium and dimethyl telluride in the system of hydrazine hydrate-alkali

    International Nuclear Information System (INIS)

    Russavskaya, N.V.; Levanova, E.P.; Sukhomazova, Eh.N.; Grabel'nykh, V.A.; Elaev, A.V.; Klyba, L.V.; Zhanchipova, E.R.; Albanov, A.I.; Korotaeva, I.M.; Toryashinova, D.S.D.; Korchevin, N.A.

    2006-01-01

    A synthesis of oligomeric substance of thiocol type, the poly(trimethyleneditelluride), from 1-bromo-3-chloropropane and elemental tellurium is performed using a hydrazine hydrate-alkali system. Reductive splitting of the tellurocol followed by alkylation with methyl iodide give rise to preparation of bis(methyltelluro)propane, which was synthesized also from dimethyl telluride and 1,3-dihalopropanes using the N 2 H 4 ·H 2 O/KOH system. The reaction products were characterized by elementary analysis, NMR, and IR spectra. Mass spectra of the synthesized low molecular weight organotellurium compounds are considered [ru

  13. Corrosion behavior of Si-enriched steels for nuclear applications in liquid lead–bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Kurata, Yuji, E-mail: kurata.yuji@jaea.go.jp [Japan Atomic Energy Agency, Tokai-mura, Ibaraki-ken 319-1195 (Japan)

    2013-06-15

    Highlights: ► The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied. ► The corrosion tests were conducted at the two controlled oxygen levels. ► The Si addition reduces the scale thickness under the high oxygen condition. ► The Si addition has no significant effect under the low oxygen condition. -- Abstract: The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied in order to develop accelerator driven systems for transmutation of long-lived radioactive wastes and lead–bismuth cooled fast reactors. The corrosion tests of 316SS, Si-enriched 316SS, Mod.9Cr–1Mo steel (T91) and Si-enriched T91 were conducted at 550 °C in liquid lead–bismuth at the two controlled oxygen levels. Both the additions of 2.5 wt.% Si to 316SS and 1.5 wt.% Si to T91 had the effect of reducing the thickness of oxide layer in liquid lead–bismuth at the high oxygen concentration (2.5 × 10{sup −5} wt.%). Although the Si addition to 316SS reduced the depth of ferritization caused by Ni dissolution in liquid lead–bismuth at the low oxygen concentration (4.4 × 10{sup −8} wt.%), it could not suppress the ferritization and the penetration of Pb and Bi completely. The Si addition to T91 did not have the effect of preventing the penetration of Pb and Bi in the liquid lead–bismuth at the low oxygen concentration. The oxide scales formed on both Si-enriched steels did not have sufficient corrosion resistance under the low oxygen condition.

  14. Zerovalent bismuth nanoparticles inhibit Streptococcus mutans growth and formation of biofilm

    Directory of Open Access Journals (Sweden)

    Hernandez-Delgadillo R

    2012-04-01

    Full Text Available Rene Hernandez-Delgadillo1, Donaji Velasco-Arias2, David Diaz2, Katiushka Arevalo-Niño1, Marianela Garza-Enriquez1, Myriam A De la Garza-Ramos1, Claudio Cabral-Romero11Instituto de Biotecnologia, Centro de Investigacion y Desarrollo en Ciencias de la Salud, CIDICS, Facultad de Odontologia, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, Nuevo Leon, 2Facultad de Quimica, Universidad Nacional Autonoma de Mexico, Distrito Federal, MexicoBackground and methods: Despite continuous efforts, the increasing prevalence of resistance among pathogenic bacteria to common antibiotics has become one of the most significant concerns in modern medicine. Nanostructured materials are used in many fields, including biological sciences and medicine. While some bismuth derivatives has been used in medicine to treat vomiting, nausea, diarrhea, and stomach pain, the biocidal activity of zerovalent bismuth nanoparticles has not yet been studied. The objective of this investigation was to analyze the antimicrobial activity of bismuth nanoparticles against oral bacteria and their antibiofilm capabilities.Results: Our results showed that stable colloidal bismuth nanoparticles had 69% antimicrobial activity against Streptococcus mutans growth and achieved complete inhibition of biofilm formation. These results are similar to those obtained with chlorhexidine, the most commonly used oral antiseptic agent. The minimal inhibitory concentration of bismuth nanoparticles that interfered with S. mutans growth was 0.5 mM.Conclusion: These results suggest that zerovalent bismuth nanoparticles could be an interesting antimicrobial agent to be incorporated into an oral antiseptic preparation.Keywords: zerovalent bismuth nanoparticles, antimicrobial agent, biofilm, Streptococcus mutans

  15. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    Directory of Open Access Journals (Sweden)

    Hernandez-Delgadillo R

    2013-04-01

    Full Text Available Rene Hernandez-Delgadillo,1 Donaji Velasco-Arias,3 Juan Jose Martinez-Sanmiguel,2 David Diaz,3 Inti Zumeta-Dube,3 Katiushka Arevalo-Niño,1 Claudio Cabral-Romero2 1Facultad de Ciencias Biológicas, Instituto de Biotecnologia, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, Mexico; 2Facultad de Odontología, Universidad Autonoma de Nuevo Leon, UANL, Monterrey, México; 3Facultad de Quimica, Universidad Nacional Autonoma de Mexico, UNAM, Distrito Federal, México Abstract: Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85% and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized

  16. Sulfate-reducing bacteria slow intestinal transit in a bismuth-reversible fashion in mice.

    Science.gov (United States)

    Ritz, N L; Lin, D M; Wilson, M R; Barton, L L; Lin, H C

    2017-01-01

    Hydrogen sulfide (H 2 S) serves as a mammalian cell-derived gaseous neurotransmitter. The intestines are exposed to a second source of this gas by sulfate-reducing bacteria (SRB). Bismuth subsalicylate binds H 2 S rendering it insoluble. The aim of this study was to test the hypothesis that SRB may slow intestinal transit in a bismuth-reversible fashion. Eighty mice were randomized to five groups consisting of Live SRB, Killed SRB, SRB+Bismuth, Bismuth, and Saline. Desulfovibrio vulgaris, a common strain of SRB, was administered by gavage at the dose of 1.0 × 10 9 cells along with rhodamine, a fluorescent dye. Intestinal transit was measured 50 minutes after gavage by euthanizing the animals, removing the small intestine between the pyloric sphincter and the ileocecal valve and visualizing the distribution of rhodamine across the intestine using an imaging system (IVIS, Perkin-Elmer). Intestinal transit (n=50) was compared using geometric center (1=minimal movement, 100=maximal movement). H 2 S concentration (n=30) was also measured when small intestinal luminal content was allowed to generate this gas. The Live SRB group had slower intestinal transit as represented by a geometric center score of 40.2 ± 5.7 when compared to Saline: 73.6 ± 5.7, Killed SRB: 77.9 ± 6.9, SRB+Bismuth: 81.0 ± 2.0, and Bismuth: 73.3 ± 4.2 (Pfashion in mice. Our results demonstrate that intestinal transit is slowed by SRB and this effect could be abolished by H 2 S-binding bismuth. © 2016 John Wiley & Sons Ltd.

  17. Spectroscopic Characterization of Extracellular Polymeric Substances from Escherichia coli and Serratia marcescens: Suppression using Sub-Inhibitory Concentrations of Bismuth Thiols

    Energy Technology Data Exchange (ETDEWEB)

    Badireddy, Appala R.; Korpol, Bhoom Reddy; Chellam, Shankararaman; Gassman, Paul L.; Engelhard, Mark H.; Lea, Alan S.; Rosso, Kevin M.

    2008-10-21

    Free and capsular EPS produced by Escherichia coli and Serratia marcescens were characterized in detail using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Total EPS production decreased upon treatment with sub-inhibitory concentrations of lipophilic bismuth thiols (bismuth dimercaptopropanol, BisBAL; bismuth ethanedithiol, BisEDT; and bismuth pyrithione, BisPYR), BisBAL being most effective. Bismuth thiols also influenced acetylation and carboxylation of polysaccharides in EPS from S. marcescens. Extensive homology between EPS samples in the presence and absence of bismuth was observed with proteins, polysaccharides, and nucleic acids varying predominantly only in the total amount expressed. Second derivative analysis of the amide I region of FTIR spectra revealed decreases in protein secondary structures in the presence of bismuth thiols. Hence, anti-fouling properties of bismuth thiols appear to originate in their ability to suppress O-acetylation and protein secondary structures in addition to total EPS secretion.

  18. Nanowire Electrodes for Advanced Lithium Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  19. Preparation and characterization of electrodeposited cobalt nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  20. Preparation and characterization of electrodeposited cobalt nanowires

    International Nuclear Information System (INIS)

    Irshad, M. I.; Mohamed, N. M.; Ahmad, F.; Abdullah, M. Z.

    2014-01-01

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl 2 Ðœ‡6H2O salt solution was used, which was buffered with H 3 BO 3 and acidified by dilute H 2 SO 4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications

  1. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  2. Nanowire Electrodes for Advanced Lithium Batteries

    Directory of Open Access Journals (Sweden)

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  3. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  4. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  5. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  6. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  7. Preparation and characterization of CuO nanowire arrays

    International Nuclear Information System (INIS)

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  8. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  9. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  10. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  11. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  12. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Kelly, Peter J.; West, Glen T. [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Tosheva, Lubomira; Edge, Michele [School of Science and the Environment, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

    2017-01-15

    Highlights: • Bismuth tungstate coatings were deposited by reactive magnetron sputtering. • Oscillating bowl was introduced to the system to enable coating of nanopartulates. • Deposition of Bi{sub 2}WO{sub 6} enhanced visible light activity of titania nanoparticles. • The best results were obtained for coating with Bi:W ratio of approximately 2:1. • Deposition of Bi{sub 2}WO{sub 6} onto TiO{sub 2} resulted in more efficient electron-hole separation. - Abstract: Titanium dioxide − bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer–Emmett–Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO{sub 2} evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO{sub 2} nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these

  13. Bismuth nanoparticles synthesized by laser ablation in lubricant oils for tribological tests

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Castañeda, M., E-mail: mar.floc@hotmail.com [Universidad Autónoma del Estado de México, Av. Instituto Literario No. 100, Oriente Col. Centro, Toluca, Estado de México C.P. 50000, México (Mexico); Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca s/n, La Marquesa, Ocoyoacac, Edo. de México C.P. 52750, México (Mexico); Camps, E. [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca s/n, La Marquesa, Ocoyoacac, Edo. de México C.P. 52750, México (Mexico); Camacho-López, M. [Universidad Autónoma del Estado de México, Av. Instituto Literario No. 100, Oriente Col. Centro, Toluca, Estado de México C.P. 50000, México (Mexico); Muhl, S. [Instituto de Investigación en Materiales (UNAM), Circuito Exterior, Ciudad Universitaria, Coyoacán, 04510 México, D.F., México (Mexico); and others

    2015-09-15

    Highlights: • Bismuth nanoparticles have been obtained by laser ablation of solids in liquids. • The technique allows controlling the size and concentration of the samples. • Bi np’s in base oils can improve the tribological characteristics of the lubricant. - Abstract: The improvement of the tribological properties of mineral base oils through the addition of bismuth nanoparticles as an additive, together with the idea of obtaining lubricants free of heavy metals, was evaluated. Bismuth nanoparticles were produced directly in the heavy and light viscosity mineral base oils (BS900 and BS6500) using the technique of laser ablation of solids immersed in liquids. Transmission electron microscopy measurements showed the presence of pure bismuth nanoparticles. Small Angle X-ray Scattering (SAXS) measurements showed that the average size of the nanoparticles was between 7 and 65 nm depending on the experimental conditions used. The tribological properties of the base oil with the bismuth nanoparticles additives were evaluated using a four-ball tester. Tests were performed using the base oil with and without Bi nanoparticles. It was observed that the coefficient of friction of the oil decrease with an increasing concentration of the nanoparticles. The results also showed that the wear rate was reduced when the Bi nanoparticle additives were used.

  14. Photoinduced switchable wettability of bismuth coating with hierarchical dendritic structure between superhydrophobicity and superhydrophilicity

    Energy Technology Data Exchange (ETDEWEB)

    Su, Chunping; Lu, Zhong; Zhao, Huiping; Yang, Hao, E-mail: hyangwit@hotmail.com; Chen, Rong, E-mail: rchenhku@hotmail.com

    2015-10-30

    Graphical abstract: - Highlights: • Hierarchical bismuth nanostructures were synthesized by galvanic replacement reaction. • The bismuth coating shows superhydrophobicity after being modified by stearic acid. • Wetting transition could be realized by alternation of irradiation and modification. - Abstract: Special wettability such as superhydrophobicity and superhydrophilicity has aroused considerable attention in recent years, especially for the surface that can be switched between superhydrophobicity and superhydrophilicity. In this work, hierarchical bismuth nanostructures with hyperbranched dendritic architectures were synthesized via the galvanic replacement reaction between zinc plate and BiCl{sub 3} in ethylene glycol solution, which was composed of a trunk, branches (secondary branch), and leaves (tertiary branch). After being modified by stearic acid, the as-prepared bismuth coating shows superhydrophobicity with a high water contact angle of 164.8° and a low sliding angle of 3°. More importantly, a remarkable surface wettability transition between superhydrophobicity and superhydrophilicity could be easily realized by the alternation of UV–vis irradiation and modification with stearic acid. The tunable wetting behavior of bismuth coating could be used as smart materials to make a great application in practice.

  15. Electronic Properties of Tin and Bismuth from Angular Correlation of Annihilation Photons

    DEFF Research Database (Denmark)

    Mogensen, O.E.; Trumpy, Georg

    1969-01-01

    ) deformed bismuth. For both metals, the single-crystal angular-correlation curves lie near to the free-electron parabola. The tin curves show more anisotropy than the bismuth curves. An important result is the clear anisotropy found in the high-momentum part of the curves—the tails—for both metals. Little......A linear slit setup has been used to obtain results of angular-correlation measurements in (a) tin single crystals in three orientations: [001], [100], and [110], (b) bismuth single crystals in four orientations: [111], [100], [1¯10], and [2¯1¯1], (c) solid and liquid tin and bismuth, and (d...... of the liquid-metal curves are smaller and of another form than the tails of polycrystalline curves; no Gaussian with only one adjustable constant factor can give a fit to both tails. No useful method for interpreting liquid-metal angular-correlation curves seems to exist. Two deformed bismuth samples gave...

  16. Characterization and re-activation of oxygen sensors for use in liquid lead-bismuth

    International Nuclear Information System (INIS)

    Kurata, Yuji; Abe, Yuji; Futakawa, Masatoshi; Oigawa, Hiroyuki

    2010-01-01

    Control of oxygen concentration in liquid lead-bismuth is one of the most important tasks to develop accelerator driven systems. In order to improve the reliability of oxygen sensors, re-activation treatments were investigated as well as characterization of oxygen sensors for use in liquid lead-bismuth. The oxygen sensor with a solid electrolyte of yttria-stabilized zirconia and a Pt/gas reference electrode showed almost the same electromotive force values in gas and liquid lead-bismuth, respectively, as the theoretical ones at temperatures above 400 deg. C or 450 deg. C. After long-term use of 6500 h, the outputs of the sensor became incorrect in liquid lead-bismuth. The state of the sensor that indicated incorrect outputs could not be recovered by cleaning with a nitric acid. However, it was found that the oxygen sensor became a correct sensor indicating theoretical values in liquid lead-bismuth after re-activation by the Pt-treatment of the outer surface of the sensor.

  17. Bismuth nanoparticles synthesized by laser ablation in lubricant oils for tribological tests

    International Nuclear Information System (INIS)

    Flores-Castañeda, M.; Camps, E.; Camacho-López, M.; Muhl, S.

    2015-01-01

    Highlights: • Bismuth nanoparticles have been obtained by laser ablation of solids in liquids. • The technique allows controlling the size and concentration of the samples. • Bi np’s in base oils can improve the tribological characteristics of the lubricant. - Abstract: The improvement of the tribological properties of mineral base oils through the addition of bismuth nanoparticles as an additive, together with the idea of obtaining lubricants free of heavy metals, was evaluated. Bismuth nanoparticles were produced directly in the heavy and light viscosity mineral base oils (BS900 and BS6500) using the technique of laser ablation of solids immersed in liquids. Transmission electron microscopy measurements showed the presence of pure bismuth nanoparticles. Small Angle X-ray Scattering (SAXS) measurements showed that the average size of the nanoparticles was between 7 and 65 nm depending on the experimental conditions used. The tribological properties of the base oil with the bismuth nanoparticles additives were evaluated using a four-ball tester. Tests were performed using the base oil with and without Bi nanoparticles. It was observed that the coefficient of friction of the oil decrease with an increasing concentration of the nanoparticles. The results also showed that the wear rate was reduced when the Bi nanoparticle additives were used

  18. Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huanwen [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Hu Zhongai, E-mail: zhongai@nwnu.edu.c [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China)

    2010-12-01

    This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 {sup o}C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g{sup -1} (based on composite) is obtained at a specific current of 1 A g{sup -1} as compared with 71 F g{sup -1} for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g{sup -1} even at 10 A g{sup -1}. In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

  19. Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

    International Nuclear Information System (INIS)

    Wang Huanwen; Hu Zhongai; Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying

    2010-01-01

    This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 o C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g -1 (based on composite) is obtained at a specific current of 1 A g -1 as compared with 71 F g -1 for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g -1 even at 10 A g -1 . In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

  20. Bismuth Modified Carbon-Based Electrodes for the Determination of Selected Neonicotinoid Insecticides

    Directory of Open Access Journals (Sweden)

    Marko Rodić

    2011-05-01

    Full Text Available Two types of bismuth modified electrodes, a bismuth-film modified glassy carbon (BiF-GCE and a bismuth bulk modified carbon paste, were applied for the determination of selected nitroguanidine neonicotinoid insecticides. The method based on an ex situ prepared BiF-GCE operated in the differential pulse voltammetric (DPV mode was applied to determine clothianidin in the concentration range from 2.5 to 23 μg cm−3 with a relative standard deviation (RSD not exceeding 1.5%. The tricresyl phosphate-based carbon paste electrodes (TCP-CPEs, bulk modified with 5 and 20 w/w% of bismuth, showed a different analytical performance in the determination of imidacloprid, regarding the peak shape, potential window, and noise level. The TCP-CPE with 5% Bi was advantageous, and the developed DPV method based on it allowed the determination in the concentration range from 1.7 to 60 μg cm−3 with an RSD of 2.4%. To get a deeper insight into the morphology of the bismuth-based sensor surfaces, scanning electron microscopic measurements were performed of both the surface film and the bulk modified electrodes.

  1. Electrochemical study on determination of diffusivity, activity and solubility of oxygen in liquid bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, Rajesh [Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Gnanasekaran, T. [Liquid Metals and Structural Chemistry Division, Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)]. E-mail: gnani@igcar.ernet.in; Srinivasa, Raman S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2006-06-15

    Diffusivity of oxygen in liquid bismuth was measured by potentiostatic method and is given bylg(D{sub O}{sup Bi}/cm{sup 2}.s{sup -1})(+/-0.042)=-3.706-1377/(TK{sup -1})(804bismuth was determined by coulometric titrations and using the measured data standard free energy of dissolution of oxygen in liquid bismuth was derived for the reaction:1/2O{sub 2}(g)=[O]{sub Bi}(at.%)and is given by{delta}G{sub O(Bi)}{sup o}/(J.g-atomO{sup -1})(+/-720)=-108784+20.356TK{sup -1}(753bismuth was derived as a function of temperature and is given by the following expressions:lg(S/at%O)(+/-0.05)=-4476/TK{sup -1}+4.05(753bismuth is compared with the literature data.

  2. Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

    International Nuclear Information System (INIS)

    Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

    2006-01-01

    We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

  3. Emulsion liquid membrane for selective extraction of bismuth from nitrate medium

    International Nuclear Information System (INIS)

    Mokhtari, Bahram; Pourabdollah, Kobra

    2013-01-01

    The novelty of this work is the selective extraction of bismuth ions from nitrate medium by emulsion liquid membrane. Di(2-ethylhexyl)phosphoric acid was used as extractant of bismuth ions from nitrate medium by emulsion liquid membrane, and Triton X-100 was used as the biodegradable surfactant in n-pentanol n-pentanol bulk membrane. The extraction of bismuth ions was evaluated by the yield of extraction. The experimental parameters were evaluated and were optimized. They included the ratio of di(2-ethylhexyl)phosphoric acid concentration to the concentration of /Triton X-100 concentration (1.0 : 0.5% w/w), nature of diluents (n-pentanol), nature and concentration of the stripping solution (sulfuric acid, 0.5M), stirring speed (1,800 rpm) and equilibrium time of extraction (20min), initial feed solution of bismuth (350 ppm) and the volume ratio of the internal stripping phase to the membrane phase (14 times). The experimental parameters of kinetic extraction revealed that the bismuth ions were extracted at 100% 97%

  4. Emulsion liquid membrane for selective extraction of bismuth from nitrate medium

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Bahram; Pourabdollah, Kobra [Islamic Azad University, Shahreza (Iran, Islamic Republic of)

    2013-07-15

    The novelty of this work is the selective extraction of bismuth ions from nitrate medium by emulsion liquid membrane. Di(2-ethylhexyl)phosphoric acid was used as extractant of bismuth ions from nitrate medium by emulsion liquid membrane, and Triton X-100 was used as the biodegradable surfactant in n-pentanol n-pentanol bulk membrane. The extraction of bismuth ions was evaluated by the yield of extraction. The experimental parameters were evaluated and were optimized. They included the ratio of di(2-ethylhexyl)phosphoric acid concentration to the concentration of /Triton X-100 concentration (1.0 : 0.5% w/w), nature of diluents (n-pentanol), nature and concentration of the stripping solution (sulfuric acid, 0.5M), stirring speed (1,800 rpm) and equilibrium time of extraction (20min), initial feed solution of bismuth (350 ppm) and the volume ratio of the internal stripping phase to the membrane phase (14 times). The experimental parameters of kinetic extraction revealed that the bismuth ions were extracted at 100% 97%.

  5. How reliable are environmental data on 'orphan' elements? The case of bismuth concentrations in surface waters.

    Science.gov (United States)

    Filella, Montserrat

    2010-01-01

    Like all elements of the periodic table, bismuth is ubiquitously distributed throughout the environment as a result of natural processes and human activities. It is present as Bi(III) in environmental, biological and geochemical samples. Although bismuth and its compounds are considered to be non-toxic to humans, its increasing use as a replacement for lead has highlighted how little is known about its environmental and ecotoxicological behaviour. In this first critical review paper on the existing information on bismuth occurrence in natural waters, 125 papers on fresh and marine waters have been collated. Although the initial objective of this study was to establish the range of the typical concentrations of total dissolved bismuth in natural waters, this proved impossible to achieve due to the wide, and hitherto unexplained, dispersion of published data. Since analytical limitations might be one of the reasons underlying value dispersion, new analytical methods published since 2000--intended to be applied to natural waters--have also been reviewed. Disappointingly, the detection limits of the bulk of them are well above those required; they are thus of limited usefulness. Analysis of the existing information on bismuth in secondary references (i.e., books, review chapters) and on its chemical speciation in seawater revealed that the uncritical reproduction of old data is a widespread practice.

  6. Recent Advances in Bismuth-Based Nanomaterials for Photoelectrochemical Water Splitting.

    Science.gov (United States)

    Bhat, Swetha S M; Jang, Ho Won

    2017-08-10

    In recent years, bismuth-based nanomaterials have drawn considerable interest as potential candidates for photoelectrochemical (PEC) water splitting owing to their narrow band gaps, nontoxicity, and low costs. The unique electronic structure of bismuth-based materials with a well-dispersed valence band comprising Bi 6s and O 2p orbitals offers a suitable band gap to harvest visible light. This Review presents significant advancements in exploiting bismuth-based nanomaterials for solar water splitting. An overview of the different strategies employed and the new ideas adopted to improve the PEC performance of bismuth-based nanomaterials are discussed. Morphology control, the construction of heterojunctions, doping, and co-catalyst loading are several approaches that are implemented to improve the efficiency of solar water splitting. Key issues are identified and guidelines are suggested to rationalize the design of efficient bismuth-based materials for sunlight-driven water splitting. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Comparison of Second-Line Quadruple Therapies with or without Bismuth for Helicobacter pylori Infection

    Directory of Open Access Journals (Sweden)

    Guang-Hong Jheng

    2015-01-01

    Full Text Available The bismuth-based quadruple regimen has been applied in Helicobacter pylori rescue therapy worldwide. The non-bismuth-based quadruple therapy or “concomitant therapy” is an alternative option in first-line eradication but has not been used in second-line therapy. Discovering a valid regimen for rescue therapy in bismuth-unavailable countries is important. We conducted a randomized controlled trial to compare the efficacies of the standard quadruple therapy and a modified concomitant regimen. One hundred and twenty-four patients were randomly assigned into two groups: RBTM (rabeprozole 20 mg bid., bismuth subcitrate 120 mg qid, tetracycline 500 mg qid, and metronidazole 250 mg qid and RATM (rabeprozole 20 mg bid., amoxicillin 1 g bid., tetracycline 500 mg qid, and metronidazole 250 mg qid for 10 days. The eradication rate of the RBTM and RATM regimen was 92.1% and 90.2%, respectively, in intention-to-treat analysis. Patients in both groups had good compliance (~96%. The overall incidence of adverse events was higher in the RATM group (42.6% versus 22.2%, P=0.02, but only seven patients (11.5% experienced grades 2-3 events. In conclusion, both regimens had good efficacy, compliance, and acceptable side effects. The 10-day RATM treatment could be an alternative rescue therapy in bismuth-unavailable countries.

  8. Evaluation on the characteristics of tin-silver-bismuth solder

    Science.gov (United States)

    Xia, Z.; Shi, Y.; Chen, Z.

    2002-02-01

    Tin-silver-bismuth solder is characterized by its lower melting point, good wetting behavior, and good mechanical property for which it is expected to be a new lead-free solder to replace tin-lead solder. In this article, Sn-3.33Ag-4.83Bi solder was investigated concerning its physical, spreading, and mechanical properties under specific conditions. Cooling curves and DSC results showed that it was close to eutectic composition (m.p. 210° 212 °C). Coefficiency of thermal expansion (CTE) of this solder, between that of PCBs and copper substrates, was beneficial to alleviate the thermal mismatch of the substrates. It was also a good electrical and thermal conductor. Using a rosin-based, mildly activated (RMA) flux, a spreading test indicated that SnAgBi solder paste had good solderability. Meanwhile, the solder had high tensile strength and fracture energy. Its fracture mechanism was a mixture of ductile and brittle fracture morphology. The metallographic and EDAX analyses indicated that it was composed of a tin-based solid solution and some intermetallic compound (IMC) that could strengthen the substrate. However, these large needle-like IMCs would cut the substrate and this resulted in the decreasing of the toughness of the solder.

  9. On the use of bismuth as a neutron filter

    CERN Document Server

    Adib, M

    2003-01-01

    A formula is given which, for neutron energies in the range 10 sup - sup 4 bismuth temperature and crystalline form. Computer programs have been developed which allow calculations for the Bi rhombohedral structure in its poly-crystalline form and its equivalent hexagonal close-packed structure. The calculated total neutron cross-sections for poly-crystalline Bi at different temperatures were compared with the measured values. An overall agreement is indicated between the formula fits and experimental data. Agreement was also obtained for values of Bi-single crystals, at room and liquid nitrogen temperatures. A feasibility study for use of Bi in powdered form, as a cold neutron filter, is detailed in terms of the optimum Bi-single crystal thickness, mosaic spread, temperature and cutting plane for efficient transmission of thermal-reactor neutrons, and also for rejection of the accom...

  10. On the use of bismuth as a neutron filter

    Science.gov (United States)

    Adib, M.; Kilany, M.

    2003-02-01

    A formula is given which, for neutron energies in the range 10 -4< E<10 eV, permits calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of bismuth temperature and crystalline form. Computer programs have been developed which allow calculations for the Bi rhombohedral structure in its poly-crystalline form and its equivalent hexagonal close-packed structure. The calculated total neutron cross-sections for poly-crystalline Bi at different temperatures were compared with the measured values. An overall agreement is indicated between the formula fits and experimental data. Agreement was also obtained for values of Bi-single crystals, at room and liquid nitrogen temperatures. A feasibility study for use of Bi in powdered form, as a cold neutron filter, is detailed in terms of the optimum Bi-single crystal thickness, mosaic spread, temperature and cutting plane for efficient transmission of thermal-reactor neutrons, and also for rejection of the accompanying fast neutrons and gamma rays.

  11. On the use of bismuth as a neutron filter

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Kilany, M. E-mail: kilany11@hotmail.com

    2003-02-01

    A formula is given which, for neutron energies in the range 10{sup -4}bismuth temperature and crystalline form. Computer programs have been developed which allow calculations for the Bi rhombohedral structure in its poly-crystalline form and its equivalent hexagonal close-packed structure. The calculated total neutron cross-sections for poly-crystalline Bi at different temperatures were compared with the measured values. An overall agreement is indicated between the formula fits and experimental data. Agreement was also obtained for values of Bi-single crystals, at room and liquid nitrogen temperatures. A feasibility study for use of Bi in powdered form, as a cold neutron filter, is detailed in terms of the optimum Bi-single crystal thickness, mosaic spread, temperature and cutting plane for efficient transmission of thermal-reactor neutrons, and also for rejection of the accompanying fast neutrons and gamma rays.

  12. On the use of bismuth as a neutron filter

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.

    2003-01-01

    A formula is given which, for neutron energies in the range 10 -4 < E<10 eV, permits calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of bismuth temperature and crystalline form. Computer programs have been developed which allow calculations for the Bi rhombohedral structure in its poly-crystalline form and its equivalent hexagonal close-packed structure. The calculated total neutron cross-sections for poly-crystalline Bi at different temperatures were compared with the measured values. An overall agreement is indicated between the formula fits and experimental data. Agreement was also obtained for values of Bi-single crystals, at room and liquid nitrogen temperatures. A feasibility study for use of Bi in powdered form, as a cold neutron filter, is detailed in terms of the optimum Bi-single crystal thickness, mosaic spread, temperature and cutting plane for efficient transmission of thermal-reactor neutrons, and also for rejection of the accompanying fast neutrons and gamma rays

  13. Natural convection in enclosures containing lead-bismuth and lead

    International Nuclear Information System (INIS)

    Dzodzo, M.; Cuckovic-Dzodzo, D.

    2001-01-01

    The design of liquid metal reactors such as Encapsulated Nuclear Heat Source (ENHS) which are based predominantly on the flow generated by natural convection effects demands knowledge of velocity and temperature fields, distribution of the local Nusselt numbers and values of the average Nusselt numbers for small coolant velocity regimes. Laminar natural convection in rectangular enclosures with different aspect ratios, containing lead-bismuth and lead is studied numerically in this paper. The numerical model takes into account variable properties of the liquid metals. The developed correlation for average Nusselt numbers is presented. It is concluded that average Nusselt numbers are lower than in 'normal' fluids (air, water and glycerol) for the same values of Rayleigh numbers. However, the heat flux, which can be achieved, is greater due to the high thermal conductivity of liquid metals. Some specific features of the flow fields generated by natural convection in liquid metals are presented. Their consequences on the design of heat exchangers for liquid metals are discussed. An application of the obtained results to the design of a new type of steam generator, which integrates the intermediate heat exchanger and secondary pool functions of the ENHS reactor, is presented. (authors)

  14. Antibacterial effect of bismuth subsalicylate nanoparticles synthesized by laser ablation

    International Nuclear Information System (INIS)

    Flores-Castañeda, Mariela; Vega-Jiménez, Alejandro L.; Almaguer-Flores, Argelia; Camps, Enrique; Pérez, Mario; Silva-Bermudez, Phaedra; Berea, Edgardo; Rodil, Sandra E.

    2015-01-01

    The antimicrobial properties of bismuth subsalicylate (BSS) nanoparticles against four opportunistic pathogens; E. coli, P. aeruginosa, S. aureus, and S. epidermidis were determined. BSS nanoparticles were synthesized by pulse laser ablation of a solid target in distilled water under different conditions. The nanoparticles were characterized using high-resolution transmission electron microscopy and absorption spectra and small angle X-ray scattering. The analysis shows that the colloids maintained the BSS structure and presented average particle size between 20 and 60 nm, while the concentration ranges from 95 to 195 mg/L. The antibacterial effect was reported as the inhibition ratio of the bacterial growth after 24 h and the cell viability was measured using the XTT assay. The results showed that the inhibition ratio of E. coli and S. epidermidis was dependant on the NPs size and/or concentration, meanwhile P. aeruginosa and S. aureus were more sensitive to the BSS nanoparticles independently of both the size and the concentration. In general, the BSS colloids with average particle size of 20 nm were the most effective, attaining inhibition ratios >80 %, similar or larger than those obtained with the antibiotic used as control. The results suggest that the BSS colloids could be used as effective antibacterial agents with potential applications in the medical area

  15. Possible superconductivity in the Bismuth IV solid phase under pressure.

    Science.gov (United States)

    Valladares, Ariel A; Rodríguez, Isaías; Hinojosa-Romero, David; Valladares, Alexander; Valladares, Renela M

    2018-04-13

    The first successful theory of superconductivity was the one proposed by Bardeen, Cooper and Schrieffer in 1957. This breakthrough fostered a remarkable growth of the field that propitiated progress and questionings, generating alternative theories to explain specific phenomena. For example, it has been argued that Bismuth, being a semimetal with a low number of carriers, does not comply with the basic hypotheses underlying BCS and therefore a different approach should be considered. Nevertheless, in 2016 based on BCS we put forth a prediction that Bi at ambient pressure becomes a superconductor at 1.3 mK. A year later an experimental group corroborated that in fact Bi is a superconductor with a transition temperature of 0.53 mK, a result that eluded previous work. So, since Bi is superconductive in almost all the different structures and phases, the question is why Bi-IV has been elusive and has not been found yet to superconduct? Here we present a study of the electronic and vibrational properties of Bi-IV and infer its possible superconductivity using a BCS approach. We predict that if the Bi-IV phase structure were cooled down to liquid helium temperatures it would also superconduct at a T c of 4.25 K.

  16. Optical bleaching of bismuth implanted silica glass: A threshold effect

    International Nuclear Information System (INIS)

    Park, S.Y.; Magruder, R.H. III; Weeks, R.A.

    1992-01-01

    The near surface regions of high purity silica glass discs, Spectrosil A, were modified by implantation with bismuth ions at 160 key and room temperature. The glasses implanted with a nominal dose of 6x10 16 Bi/cm 2 at ∼5 μA/cm 2 were subsequently bleached with a 5.0 eV KrF pulsed excimer laser. The laser had an average pulse duration of ∼20 ns and repetition rate of 10 Hz. It was found that the bleaching was dependent upon the power density of the laser for a constant total integrated energy. Ion backscattering and optical absorption measurements were made before and after laser irradiation. Large changes in optical density and depth distribution of the implanted ions were observed at power densities of ≥45 mJ/cm 2 -pulse. Onset of threshold for bleaching of silica glass implanted with 6x10 16 Bi/cm 2 at 160 key and at room temperature is between 30 and 45 mJ/cm 2 -pulse

  17. Antibacterial effect of bismuth subsalicylate nanoparticles synthesized by laser ablation

    Science.gov (United States)

    Flores-Castañeda, Mariela; Vega-Jiménez, Alejandro L.; Almaguer-Flores, Argelia; Camps, Enrique; Pérez, Mario; Silva-Bermudez, Phaedra; Berea, Edgardo; Rodil, Sandra E.

    2015-11-01

    The antimicrobial properties of bismuth subsalicylate (BSS) nanoparticles against four opportunistic pathogens; E. coli, P. aeruginosa, S. aureus, and S. epidermidis were determined. BSS nanoparticles were synthesized by pulse laser ablation of a solid target in distilled water under different conditions. The nanoparticles were characterized using high-resolution transmission electron microscopy and absorption spectra and small angle X-ray scattering. The analysis shows that the colloids maintained the BSS structure and presented average particle size between 20 and 60 nm, while the concentration ranges from 95 to 195 mg/L. The antibacterial effect was reported as the inhibition ratio of the bacterial growth after 24 h and the cell viability was measured using the XTT assay. The results showed that the inhibition ratio of E. coli and S. epidermidis was dependant on the NPs size and/or concentration, meanwhile P. aeruginosa and S. aureus were more sensitive to the BSS nanoparticles independently of both the size and the concentration. In general, the BSS colloids with average particle size of 20 nm were the most effective, attaining inhibition ratios >80 %, similar or larger than those obtained with the antibiotic used as control. The results suggest that the BSS colloids could be used as effective antibacterial agents with potential applications in the medical area.

  18. Synthesis and characterization of bismuth zinc niobate pyrochlore nanopowders

    Directory of Open Access Journals (Sweden)

    Sonia Maria Zanetti

    2007-09-01

    Full Text Available Bismuth zinc niobate pyrochlores Bi1.5ZnNb1.5O7 (alpha-BZN, and Bi2(Zn1/3Nb2/32O 7 (beta-BZN have been synthesized by chemical method based on the polymeric precursors. The pyrochlore phase was investigated by differential scanning calorimetry, infrared spectroscopy, and X ray diffraction. Powder and sintered pellets morphology was examined by scanning electron microscopy. The study of alpha-BZN phase formation reveals that, at 500 °C, the pyrochlore phase was already present while a single-phased nanopowder was obtained after calcination at 700 °C. The crystallization mechanism of the beta-BZN is quite different, occurring through the crystallization of alpha-BZN and BiNbO4 intermediary phases. Both compositions yielded soft agglomerated powders. alpha-BZN pellets, sintered at 800 °C for 2 hours, presented a relative density of 97.3% while those of beta-BZN, sintered at 900 °C for 2 hours, reached only 91.8%. Dielectric constant and dielectric loss, measured at 1 MHz, were 150 and 4 x/10-4 for a-BZN, and 97 and 8 x 10-4 for beta-BZN.

  19. Structure, spectra and stability of solid bismuth carbonates

    International Nuclear Information System (INIS)

    Taylor, Peter; Sunder, S.; Lopata, V.J.

    1984-01-01

    A previously unreported basic bismuth carbonate, (BiO)sub(4)(OH)sub(2)COsub(3), has been identified as an intermediate product in the interconversion of α-Bisub(2)Osub(3) and synthetic bismutite, (BiO)sub(2)COsub(3), in aqueous carbonate solutions. It has a narrow stability field between COsub(2) partial pressures of 10sup(-5.5+-1.0) Pa, in the presence of dilute aqueous solution at 25 degrees C. Gibbs energies of formation, calculated from these partial pressures, are Δsub(f)Gsup(0)((BiO)sub(4)(OH)sub(2)COsub(3),s,298.15 K)-1678 +- 9 kJ molsup(-1) and Δsub(f)Gsup(0)((BiO)sub(2)COsub(3),s,298.15 K)=-945 +- 7 kJ molsup(-1). The two carbonates have been compared by thermogravimetric analysis, X-ray powder diffractometry, and infrared and Raman spectroscopy. The unit cell of (BiO)sub(4)(OH)sub(2)COsub(3) is dimensionally orthorhombic, with a=10.772(1), b=5.4898(5), c=14.757(1)angstrom,Z=4, but its true symmetry is probably triclinic. A structural model for (BiO)sub(4)(OH)sub(2)COsub(3), and two modified models for (BiO)sub(2)COsub(3), are proposed. The possible natural occurrence of (BiO)sub(4)(OH)sub(2)COsub(3) is discussed

  20. Modular Lead-Bismuth Fast Reactors in Nuclear Power

    Directory of Open Access Journals (Sweden)

    Vladimir Petrochenko

    2012-09-01

    Full Text Available On the basis of the unique experience of operating reactors with heavy liquid metal coolant–eutectic lead-bismuth alloy in nuclear submarines, the concept of modular small fast reactors SVBR-100 for civilian nuclear power has been developed and validated. The features of this innovative technology are as follows: a monoblock (integral design of the reactor with fast neutron spectrum, which can operate using different types of fuel in various fuel cycles including MOX fuel in a self-providing mode. The reactor is distinct in that it has a high level of self-protection and passive safety, it is factory manufactured and the assembled reactor can be transported by railway. Multipurpose application of the reactor is presumed, primarily, it can be used for regional power to produce electricity, heat and for water desalination. The Project is being realized within the framework of state-private partnership with joint venture OJSC “AKME-Engineering” established on a parity basis by the State Atomic Energy Corporation “Rosatom” and the Limited Liability Company “EuroSibEnergo”.

  1. Antibacterial effect of bismuth subsalicylate nanoparticles synthesized by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Castañeda, Mariela [Instituto Nacional de Investigaciones Nucleares (Mexico); Vega-Jiménez, Alejandro L., E-mail: argelia.almaguer@mac.com; Almaguer-Flores, Argelia [Universidad Nacional Autónoma de México, Facultad de Odontología, DEPeI, I (Mexico); Camps, Enrique; Pérez, Mario [Instituto Nacional de Investigaciones Nucleares (Mexico); Silva-Bermudez, Phaedra [Instituto Nacional de Rehabilitación, Unidad de Ingeniería de Tejidos, Terapia Celular y Medicina Regenerativa (Mexico); Berea, Edgardo [FarmaQuimia SA de CV. (Mexico); Rodil, Sandra E. [Universidad Nacional Autónoma de México, Instituto de Investigaciones en Materiales (Mexico)

    2015-11-15

    The antimicrobial properties of bismuth subsalicylate (BSS) nanoparticles against four opportunistic pathogens; E. coli, P. aeruginosa, S. aureus, and S. epidermidis were determined. BSS nanoparticles were synthesized by pulse laser ablation of a solid target in distilled water under different conditions. The nanoparticles were characterized using high-resolution transmission electron microscopy and absorption spectra and small angle X-ray scattering. The analysis shows that the colloids maintained the BSS structure and presented average particle size between 20 and 60 nm, while the concentration ranges from 95 to 195 mg/L. The antibacterial effect was reported as the inhibition ratio of the bacterial growth after 24 h and the cell viability was measured using the XTT assay. The results showed that the inhibition ratio of E. coli and S. epidermidis was dependant on the NPs size and/or concentration, meanwhile P. aeruginosa and S. aureus were more sensitive to the BSS nanoparticles independently of both the size and the concentration. In general, the BSS colloids with average particle size of 20 nm were the most effective, attaining inhibition ratios >80 %, similar or larger than those obtained with the antibiotic used as control. The results suggest that the BSS colloids could be used as effective antibacterial agents with potential applications in the medical area.

  2. Superconductivity in the unconventional high pressure phase bismuth-III

    Energy Technology Data Exchange (ETDEWEB)

    Semeniuk, Konstantin; Brown, Philip; Vasiljkovic, Aleksandar; Grosche, Malte [University of Cambridge (United Kingdom)

    2015-07-01

    One of the most surprising developments in high pressure research was the realisation that many elements assume very unexpected high pressure structures, described in terms of extremely large or even infinite unit cells. Elemental bismuth, which has been known to undergo a series of pressure induced structural transitions between 25 kbar and 80 kbar, is an interesting example: the intermediate pressure Bi-III phase has a complex 'host-guest' structure consisting of two incommensurate sublattices. Since the unit cell is infinitely large, the description of electronic and lattice excitations is problematic. Apart from its metallic character and the observation of superconductivity at low temperature, little is known about the electronic structure in this phase. We investigate the electrical resistivity within the metallic Bi-III phase under high hydrostatic pressure and in applied magnetic field using a piston cylinder cell. Superconductivity is observed below 7.1 K, and we extract the temperature dependence of the upper critical field, which exceeds 2 T at low temperature. The normal state resistivity exhibits an approximately linear temperature dependence. This could be attributed to strong scattering from low-lying excitations, as caused by an unusually soft phonon spectrum. The results suggest that strong coupling superconductivity arises within the host-guest structure of Bi-III out of an unusual electronic state.

  3. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  4. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  5. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  6. Computational analysis of interfacial attachment kinetics and transport phenomena during liquid phase epitaxy of mercury cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Rasin, Igal; Brandon, Simon [Dept. of Chemical Engineering, Technion, Haifa 32000 (Israel); Ben Dov, Anne; Grimberg, Ilana; Klin, Olga; Weiss, Eliezer [SCD-Semi-Conductor Devices, P.O. Box 2250/99, Haifa 31021 (Israel)

    2010-07-01

    Deposition of mercury cadmium telluride (MCT) thin films, on lattice matched cadmium zinc telluride substrates, is often achieved via Liquid Phase Epitaxy (LPE). The yield and quality of these films, required for the production of infrared detector devices, is to a large extent limited by lack of knowledge regarding details of physical phenomena underlying the deposition process. Improving the understanding of these phenomena and their impact on the quality of the resultant films is therefore an important goal which can be achieved through relevant computational and/or experimental studies. We present a combined computational and experimental effort aimed at elucidating physical phenomena underlying the LPE of MCT via a slider growth process. The focus of the presentation will be results generated by a time-dependent three-dimensional model of mass transport, fluid flow, and interfacial attachment kinetics, which we have developed and applied in the analysis of this LPE process. These results, combined with experimental analyses, lead to an improved understanding of the role of different transport and kinetic phenomena underlying this growth process.

  7. MEXICO loop provides essential technology for MYRRHA. SCK•CEN investigates the chemistry of lead-bismuth

    International Nuclear Information System (INIS)

    2014-01-01

    In the MYRRHA facility, Lead-Bismuth Eutectic (LBE) alloy will act as the primary coolant. There are different experimental lead-bismuth loops in the world. Most have been designed to study steel corrosion in LBE or the thermohydraulics of LBE. The article discusses the MEXICO test loop, which has been developed by SCK-CEN to investigate the chemistry of leadbismuth.

  8. The safety and efficacy of ranitidine bismuth citrate in combination with antibiotics for the eradication of Helicobacter pylori

    NARCIS (Netherlands)

    Wyeth, J. W.; Pounder, R. E.; Duggan, A. E.; O'Morain, C. A.; Schaufelberger, H. D.; de Koster, E. H.; Rauws, E. A.; Bardhan, K. D.; Gilvarry, J.; Buckley, M. J.; Gummett, P. A.; Logan, R. P.

    1996-01-01

    Ranitidine bismuth citrate is a novel salt of ranitidine and a bismuth citrate complex. It has intrinsic antisecretory and anti-Helicobacter pylori activity, but monotherapy rarely eradicates H. pylori infection in man. A pilot study to investigate rates of H. pylori eradication achieved by

  9. The influence of metronidazole resistance on the efficacy of ranitidine bismuth citrate triple therapy regimens for Helicobacter pylori infection

    NARCIS (Netherlands)

    Van der Wouden, EJ; Thijs, JC; Van Zwet, AA; Kooy, A; Kleibeuker, JH

    Aim: To assess the influence of metronidazole resistance on the efficacy of ranitidine bismuth citrate-based triple therapy regimens in two consecutive studies. Methods: In the first study, patients with a culture-proven Helicobacter pylori infection were treated with ranitidine bismuth citrate 400

  10. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  11. Nanowire and microwire fabrication technique and product

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Zach, Michael; Marten, Alan David

    2018-02-27

    A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.

  12. Silicon nanowires for photovoltaic solar energy conversion.

    Science.gov (United States)

    Peng, Kui-Qing; Lee, Shuit-Tong

    2011-01-11

    Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

  13. Plasmon resonant cavities in vertical nanowire arrays

    Science.gov (United States)

    Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

    2014-07-15

    Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

  14. Nanowires and nanostructures fabrication using template methods

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Vlad, A.

    2009-01-01

    One of the great challenges of today is to find reliable techniques for the fabrication of nanomaterials and nanostructures. Methods based on template synthesis and on self organization are the most promising due to their easiness and low cost. This paper focuses on the electrochemical synthesis ...... of nanowires and nanostructures using nanoporous host materials such as supported anodic aluminum considering it as a key template for nanowires based devices. New ways are opened for applications by combining such template synthesis methods with nanolithographic techniques....

  15. Smooth Nanowire/Polymer Composite Transparent Electrodes

    KAUST Repository

    Gaynor, Whitney; Burkhard, George F.; McGehee, Michael D.; Peumans, Peter

    2011-01-01

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Enhanced magnetotransport in nanopatterned manganite nanowires.

    Science.gov (United States)

    Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

    2014-02-12

    We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

  17. Smooth Nanowire/Polymer Composite Transparent Electrodes

    KAUST Repository

    Gaynor, Whitney

    2011-04-29

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

    KAUST Repository

    Montes Muñ oz, Enrique

    2017-01-01

    and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay

  19. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    International Nuclear Information System (INIS)

    Kelvin G. Lynn; Kelly A. Jones

    2007-01-01

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of ∼ 3 x 10 8 Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10 10 Ohm*cm and with a average μτ product for electrons of ∼ 2 x 10 -4 cm 2 /V with a 1/4 microsecond shaping time with samples ∼2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps and temperature profiles. CG39 ingot

  20. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    Directory of Open Access Journals (Sweden)

    Fan J

    2016-07-01

    Full Text Available Junpeng Fan,1–4 Ming Shao,1–4 Lu Lai,3–5 Yi Liu,3–5 Zhixiong Xie1–4,6 1College of Life Sciences, Wuhan University, 2Hubei Provincial Cooperative Innovation Center of Industrial Fermentation,3State Key Laboratory of Virology, 4Key Laboratory of Analytical Chemistry for Biology and Medicine (MOE, 5College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 6School of Life Science and Technology, Hubei Engineering University, Xiaogan, People’s Republic of China Abstract: Cadmium telluride quantum dots (CdTe QDs are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator, combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. Keywords: CdTe quantum dots, Saccharomyces cerevisiae, toxicity, autophagy