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Sample records for bismuth silicon oxide

  1. Hydrothermal synthesis of bismuth germanium oxide

    Science.gov (United States)

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  2. Dynamic spatial structure of spontaneous beams in photorefractive bismuth sillicon oxide

    DEFF Research Database (Denmark)

    Buchhave, Preben; Lyuksyutov, S.; Vasnetsov, M.

    1996-01-01

    We report the domain structure of spontaneously occurring beams (subharmonics) in photorefractive bismuth silicon oxide with an applied electric field from 1 to 6 kV/cm and a running grating. The subharmonic beams are generated in a pattern of domains that evolve dynamically as they move through...

  3. Bismuth onion thin film in situ grown on silicon wafer synthesized through a hydrothermal approach

    International Nuclear Information System (INIS)

    Zhao Yue; Liu Hong; Liu Jin; Hu Chenguo; Wang Jiyang

    2010-01-01

    Bismuth onion structured nanospheres with the same structure as carbon onions have been synthesized and observed. The nanospheres were synthesized through a hydrothermal method using bismuth hydroxide and silicon wafer as reactants. By controlling the heating temperature, heating time, and the pressure, nanoscale bismuth spheres can be in situ synthesized on silicon wafer, and forms a bismuth onion film on the substrate. The electronic property of the films was investigated. A formation mechanism of the formation of bismuth onions and the onion film has been proposed on the basis of experimental observations.

  4. Study of bismuth molybdenum oxidic catalysts for methanol oxidation to formaldehyde

    International Nuclear Information System (INIS)

    Khokhler, R.Ya.; Kurina, L.N.; Kudrina, N.V.

    1982-01-01

    Phase composition and catalytic properties of bismuth molybdenum oxidic system in reaction of methanol oxidation are studied at temperature of 280-350 deg. Increase of selectivity according to formaldehyde is connected with formation of MoO 3 solid solution in bismuth molybdate Bi 2 O 3 x3MoO 3

  5. Dental discoloration caused by bismuth oxide in MTA in the presence of sodium hypochlorite.

    Science.gov (United States)

    Marciano, Marina Angélica; Duarte, Marco Antonio Hungaro; Camilleri, Josette

    2015-12-01

    The aim of this research was to analyse the dental discolouration caused by mineral trioxide aggregate (MTA) induced by bismuth oxide and also assess the colour stability of other dental cements. Bismuth oxide, calcium tungstate and zirconium oxide were placed in contact with sodium hypochlorite for 24 h after which they were dried and photographed. Phase analyses were performed by X-ray diffraction (XRD) of radiopacifiers before and after immersion in sodium hypochlorite. Furthermore, teeth previously immersed in water or sodium hypochlorite were filled with MTA Angelus, Portland cement (PC), PC with 20 % zirconium oxide, PC with 20 % calcium tungstate and Biodentine. Teeth were immersed for 28 days in Hank's balanced salt solution after which they were sectioned and characterized using scanning electron microscopy (SEM) with energy-dispersive mapping and stereomicroscopy. Bismuth oxide in contact with sodium hypochlorite exhibited a change in colour from light yellow to dark brown. XRD analysis demonstrated peaks for radiopacifier and sodium chloride in samples immersed in sodium hypochlorite. The SEM images of the dentine to material interface showed alteration in material microstructure for MTA Angelus and Biodentine with depletion in calcium content in the material. The energy-dispersive maps showed migration of radiopacifier and silicon in dentine. MTA Angelus in contact with a tooth previously immersed in sodium hypochlorite resulted in colour alteration at the cement/dentine interface. MTA Angelus should not be used after irrigation with sodium hypochlorite as this will result in tooth discoloration.

  6. Oxygen surface exchange kinetics of erbia-stabilized bismuth oxide

    NARCIS (Netherlands)

    Yoo, C.-Y.; Boukamp, Bernard A.; Bouwmeester, Henricus J.M.

    2011-01-01

    The surface oxygen exchange kinetics of bismuth oxide stabilized with 25 mol% erbia (BE25) has been studied in the temperature and pO2 ranges 773–1,023 K and 0.1– 0.95 atm, respectively, using pulse-response 18O–16O isotope exchange measurements. The results indicate that BE25 exhibits a

  7. Formic Acid Oxidation at Platinum-Bismuth Clusters

    DEFF Research Database (Denmark)

    Lovic, J. D.; Stevanovic, S. I.; Tripkovic, D. V.

    2014-01-01

    Formic acid oxidation was studied on platinum-bismuth deposits on glassy carbon (GC) substrate. The catalysts of equimolar ratio were prepared by potentiostatic deposition using chronocoulometry. Bimetallic structures obtained by two-step process, comprising deposition of Bi followed by deposition...

  8. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM

    International Nuclear Information System (INIS)

    Otalora B, D. M.; Dussan, A.; Olaya F, J. J.

    2015-01-01

    In this work, bismuth (Bi) and bismuth oxide (Bi 2 O 3 ) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi 2 O 3 . From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi 2 O 3 and Bi, respectively. (Author)

  9. Genotoxic effects of bismuth (III oxide nanoparticles by comet assay

    Directory of Open Access Journals (Sweden)

    Reecep Liman

    2015-06-01

    Full Text Available Bismuth oxide is one of the important transition metal oxides and it has been intensively studied due to their peculiar characteristics (semiconductor band gap, high refractive index, high dielectric permittivity, high oxygen conductivity, resistivity, photoconductivity and photoluminescence etc.. Therefore, it is used such as microelectronics, sensor technology, optical coatings, transparent ceramic glass manufacturing, nanoenergetic gas generator, biosensor for DNA hybridization, potential immobilizing platforms for glucose oxidase and polyphenol oxidase, fuel cells, a additive in paints, an astringent in a variety of medical creams and topical ointments, and for the determination of heavy metal ions in drinking water, mineral water and urine. In addition this, Bismuth (III oxide nanoparticles (BONPs are favorable for the biomolecules adsorption than regular sized particles because of their greater advantages and novel characteristics (much higher specific surface, greater surface free energy, and good electrochemical stability etc.. Genotoxic effects of BONPs were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of BONPs at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was also observed at all concentrations of BONPs except 12.5 ppm by Comet assay. The results were also analyzed statistically by using SPSS for Windows; Duncan’s multiple range test was performed. These result indicate that BONPs exhibit genotoxic activity in A. cepa root meristematic cells.

  10. Yttrium bismuth titanate pyrochlore mixed oxides for photocatalytic hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Merka, Oliver

    2012-10-18

    In this work, the sol-gel synthesis of new non-stoichiometric pyrochlore titanates and their application in photocatalytic hydrogen production is reported. Visible light response is achieved by introducing bismuth on the A site or by doping the B site by transition metal cations featuring partially filled d orbitals. This work clearly focusses on atomic scale structural changes induced by the systematical introduction of non-stoichiometry in pyrochlore mixed oxides and the resulting influence on the activity in photocatalytic hydrogen production. The materials were characterized in detail regarding their optical properties and their atomic structure. The pyrochlore structure tolerates tremendous stoichiometry variations. The non-stoichiometry in A{sub 2}O{sub 3} rich compositions is compensated by distortions in the cationic sub-lattice for the smaller Y{sup 3+} cation and by evolution of a secondary phase for the larger Bi{sup 3+} cation on the A site. For TiO{sub 2} rich compositions, the non-stoichiometry leads to a special vacancy formation in the A and optionally O' sites. It is shown that pyrochlore mixed oxides in the yttrium bismuth titanate system represent very active and promising materials for photocatalytic hydrogen production, if precisely and carefully tuned. Whereas Y{sub 2}Ti{sub 2}O{sub 7} yields stable hydrogen production rates over time, the bismuth richer compounds of YBiTi{sub 2}O{sub 7} and Bi{sub 2}Ti{sub 2}O{sub 7} are found to be not stable under irradiation. This drawback is overcome by applying a special co-catalyst system consisting of a precious metal core and a Cr{sub 2}O{sub 3} shell on the photocatalysts.

  11. Bismuth Oxide Nanoparticles in the Stratosphere

    Science.gov (United States)

    Rietmeijer, Frans J. M.; Mackinnon, Ian D. R.

    1997-01-01

    Platey grains of cubic Bi2O3, alpha-Bi2O3, and Bi2O(2.75), nanograins were associated with chondritic porous interplanetary dust particles W7029C1, W7029E5, and 2011C2 that were collected in the stratosphere at 17-19 km altitude. Similar Bi oxide nanograins were present in the upper stratosphere during May 1985. These grains are linked to the plumes of several major volcanic eruptions during the early 1980s that injected material into the stratosphere. The mass of sulfur from these eruptions is a proxy for the mass of stratospheric Bi from which we derive the particle number densities (p/cu m) for "average Bi2O3 nanograins" due to this volcanic activity and those necessary to contaminate the extraterrestrial chondritic porous interplanetary dust particles via collisional sticking. The match between both values supports the idea that Bi2O3 nanograins of volcanic origin could contaminate interplanetary dust particles in the Earth's stratosphere.

  12. Selective oxidation of propylene to acrolein by silica-supported bismuth molybdate catalysts

    DEFF Research Database (Denmark)

    Duc, Duc Truong; Ha, Hanh Nguyen; Fehrmann, Rasmus

    2011-01-01

    Silica-supported bismuth molybdate catalysts have been prepared by impregnation, structurally characterized and examined as improved catalysts for the selective oxidation of propylene to acrolein. Catalysts with a wide range of loadings (from 10 to 90 wt%) of beta bismuth molybdate (β-Bi2Mo2O9...

  13. Photoconductivity in Transition Metal Doped Bismuth Germanium Oxide

    Science.gov (United States)

    Newkirk, Nolan M.; McCullough, J. S.; Martin, J. J.

    1999-10-01

    Bismuth germanium oxide (BGO) is a photorefractive material that has potential for a number of applications. We are investigating the possibility of tailoring it for specific uses by doping with 3d-ions. . Anti-site bismuth is a native defect in melt-grown BGO. This amphoteric defect dominates the photo-response of undoped BGO and plays a role in transition metal doped samples. The majority of the 3d-ions go into the tetrahedrally bonded Ge-site; thus, Cr would be expected to be in a 4+ state. Instead, it gives up an electron to the anti-site Bi and is in a 5+ state. Strongly persistent photorefractive gratings are observed in BGO:Cr. Photoconductivity measurements were performed on undoped BGO, BGO:V, and BGO:Cr before and after the samples were exposed to 442 nm light. The photoconductivity response roughly matched the optical absorption spectra of the samples. The exposed samples showed additional photo-induced absorption bands and much stronger photocurrents in the same spectral regions. The exposure to blue light appears to convert Cr from the 5+ state to the 4+state.

  14. Radiopacity and histological assessment of Portland cement plus bismuth oxide.

    Science.gov (United States)

    Coutinho-Filho, Tauby; De-Deus, Gustavo; Klein, Leila; Manera, Gisele; Peixoto, Carla; Gurgel-Filho, Eduardo Diogo

    2008-12-01

    The present study evaluated the subcutaneous connective tissue reactions and the radiopacity of MTA, Portland cement (PC), and Portland cement plus bismuth oxide (BO). Forty rats were divided into 5 groups (n = 8 per group): A1: Control (empty capsule); A2: Pro-Root MTA; A3: PC; A4: PC + BO 1:1; and A5: PC + BO 2:1. Polyethylene tubes were filled with the test materials and standardized radiographic images were taken. Histological evaluation was done after 7 and 60 days. Student t test and Fisher's test were used in the statistical analysis (P A4 > A5 > A3. No differences were found for the tissue response in the 2 experimental periods. A positive correlation between BO concentration and radiopacity of PC was determined. The histological evaluation suggests that all studied materials were biocompatible at 7 and 60 days.

  15. Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

    International Nuclear Information System (INIS)

    Gao Zheng; Qin Haiming; Yan Tao; Liu Hong; Wang Jiyang

    2011-01-01

    Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt–silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100–800 nm in width and over 50 μm in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current–voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: ► Bismuth nanobelts in situ grown on silicon wafer were achieved. ► Special bismuth–silicon nanostructure. ► Potential application in sensitive magnetic sensor and other electronic devices.

  16. Bismuth oxide aqueous colloidal nanoparticles inhibit Candida albicans growth and biofilm formation

    Science.gov (United States)

    Hernandez-Delgadillo, Rene; Velasco-Arias, Donaji; Martinez-Sanmiguel, Juan Jose; Diaz, David; Zumeta-Dube, Inti; Arevalo-Niño, Katiushka; Cabral-Romero, Claudio

    2013-01-01

    Multiresistance among microorganisms to common antimicrobials has become one of the most significant concerns in modern medicine. Nanomaterials are a new alternative to successfully treat the multiresistant microorganisms. Nanostructured materials are used in many fields, including biological sciences and medicine. Recently, it was demonstrated that the bactericidal activity of zero-valent bismuth colloidal nanoparticles inhibited the growth of Streptococcus mutans; however the antimycotic potential of bismuth nanostructured derivatives has not yet been studied. The main objective of this investigation was to analyze the fungicidal activity of bismuth oxide nanoparticles against Candida albicans, and their antibiofilm capabilities. Our results showed that aqueous colloidal bismuth oxide nanoparticles displayed antimicrobial activity against C. albicans growth (reducing colony size by 85%) and a complete inhibition of biofilm formation. These results are better than those obtained with chlorhexidine, nystatin, and terbinafine, the most effective oral antiseptic and commercial antifungal agents. In this work, we also compared the antimycotic activities of bulk bismuth oxide and bismuth nitrate, the precursor metallic salt. These results suggest that bismuth oxide colloidal nanoparticles could be a very interesting candidate as a fungicidal agent to be incorporated into an oral antiseptic. Additionally, we determined the minimum inhibitory concentration for the synthesized aqueous colloidal Bi2O3 nanoparticles. PMID:23637533

  17. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  18. Evaluation of the strength and radiopacity of Portland cement with varying additions of bismuth oxide.

    Science.gov (United States)

    Saliba, E; Abbassi-Ghadi, S; Vowles, R; Camilleri, J; Hooper, S; Camilleri, J

    2009-04-01

    To study the effect of addition of various proportions of bismuth oxide on compressive strength and radiopacity of Portland cement. The compressive strength of white Portland cement and cement replaced with 10, 15, 20, 25 and 30% bismuth oxide was evaluated by testing cylinders 6 mm in diameter and 12 mm high. Twelve cylinders were tested for each material under study. The radiopacity of the cements tested was evaluated using an aluminium step-wedge and densitometer. The optical density was compared with the relevant thickness of aluminium (Al). Statistical analysis was performed using Analysis of Variance (ANOVA) with P = 0.05 and Tukey test to perform multiple comparison tests. Various additions of bismuth oxide had no significant effect on the strength of the material when compared with the unmodified Portland cement (P > 0.05). The radiopacity of the cements tested ranged from 2.02 mm Al for Portland cement to 9.79 mm Al for the highest bismuth replacement. Addition of bismuth oxide did not affect the compressive strength of Portland cement. All the bismuth oxide cement mixtures had radio-opacities higher than 3 mm thickness of aluminium.

  19. Bismuth oxide nanorods based immunosensor for mycotoxin detection.

    Science.gov (United States)

    Solanki, Pratima R; Singh, Jay; Rupavali, Bharti; Tiwari, Sachchidanand; Malhotra, Bansi D

    2017-01-01

    We report results of the studies relating to fabrication of an efficient immunosensor based on bismuth oxide nanorods (nBi 2 O 3 ), electrophoretically deposited onto indium-tin-oxide (ITO) coated glass substrate. This immunosensor was fabricated by immobilization of anti-aflatoxin monoclonal antibodies (Ab-AFB1) and bovine serum albumin (BSA) for aflatoxin B1 detection. The structural and morphological studies of n-Bi 2 O 3 have been carried out by XRD, UV-vis spectrophotometer; SEM, AFM and FTIR. It was found that the nBi 2 O 3 provided improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The results of electrochemical response studies of this BSA/Ab-AFB1/nBi 2 O 3 /ITO immunosensor revealed good linearity in the range of 1-70ngdL -1 with low detection limit of 8.715ng/dL, improved sensitivity of 1.132μA/(ng/dLcm -2 ), regression coefficient R 2 of 0.918 and reproducibility of >11 times. The association constant for the BSA/Ab-AFB1/nBi 2 O 3 /ITO immunosensor was determined as 7.318ng/dL. Copyright © 2016 Elsevier B.V. All rights reserved.

  20. Formic acid oxidation at platinum-bismuth catalysts

    Directory of Open Access Journals (Sweden)

    Popović Ksenija Đ.

    2015-01-01

    Full Text Available The field of heterogeneous catalysis, specifically catalysis on bimetallic surfaces, has seen many advances over the past few decades. Bimetallic catalysts, which often show electronic and chemical properties that are distinct from those of their parent metals, offer the opportunity to obtain new catalysts with enhanced selectivity, activity, and stability. The oxidation of formic acid is of permanent interest as a model reaction for the mechanistic understanding of the electrooxidation of small organic molecules and because of its technical relevance for fuel cell applications. Platinum is one of the most commonly used catalysts for this reaction, despite the fact that it shows a few significant disadvantages: high cost and extreme susceptibility to poisoning by CO. To solve this problem, several approaches have been used, but generally, they all consist in the modification of platinum with a second element. Especially, bismuth has received significant attention as Pt modifier. According to the results presented in this survey dealing with the effects influencing the formic acid oxidation it was found that two types of Pt-Bi bimetallic catalysts (bulk and low loading deposits on GC showed superior catalytic activity in terms of the lower onset potential and oxidation current density, as well as exceptional stability compared to Pt. The findings in this report are important for the understanding of mechanism of formic acid electrooxidation on a bulk alloy and decorated surface, for the development of advanced anode catalysts for direct formic acid fuel cells, as well as for the synthesis of novel low-loading bimetallic catalysts. The use of bimetallic compounds as the anode catalysts is an effective solution to overcoming the problems of the formic acid oxidation current stability for long term applications. In the future, the tolerance of both CO poisoning and electrochemical leaching should be considered as the key factors in the development

  1. Facile solvothermal synthesis of a graphene nanosheet-bismuth oxide composite and its electrochemical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huanwen [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Hu Zhongai, E-mail: zhongai@nwnu.edu.c [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China); Chang Yanqin; Chen Yanli; Lei Ziqiang; Zhang Ziyu; Yang Yuying [Key Laboratory of Eco-Environment-Related Polymer Materials of Ministry of Education, Key Laboratory of Polymer Materials of Gansu Province, College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070 (China)

    2010-12-01

    This work demonstrates a novel and facile route for preparing graphene-based composites comprising of metal oxide nanoparticles and graphene. A graphene nanosheet-bismuth oxide composite as electrode materials of supercapacitors was firstly synthesized by thermally treating the graphene-bismuth composite, which was obtained through simultaneous solvothermal reduction of the colloidal dispersions of negatively charged graphene oxide sheets in N,N-dimethyl formamide (DMF) solution of bismuth cations at 180 {sup o}C. The morphology, composition, and microstructure of the composites together with pure graphite oxide, and graphene were characterized using powder X-ray diffraction (XRD), FT-IR, field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), thermogravimetry and differential thermogravimetry (TG-DTG). The electrochemical behaviors were measured by cyclic voltammogram (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). The specific capacitance of 255 F g{sup -1} (based on composite) is obtained at a specific current of 1 A g{sup -1} as compared with 71 F g{sup -1} for pure graphene. The loaded-bismuth oxide achieves a specific capacitance as high as 757 F g{sup -1} even at 10 A g{sup -1}. In addition, the graphene nanosheet-bismuth oxide composite electrode exhibits the excellent rate capability and well reversibility.

  2. Self-assembled silicon oxide nanojunctions

    International Nuclear Information System (INIS)

    Lin, L W; Tang, Y H; Chen, C S

    2009-01-01

    Novel silicon oxide nanojunction structures with various shapes, such as X type, Y type, T type, ringlike and treelike, are fabricated in a self-assembled manner by the hydrothermal method without any metallic catalyst. In the silicon oxide nanojunctions, both the silicon oxide nanowire part and the junction part consist of the same chemical composition, forming homogeneous homojunctions and being made suitable for application in nanoscale optoelectronics devices. The formation of silicon oxide nanojunctions may be influenced by the surrounding environment in the reaction kettle, growth space among the silicon oxide nanowires and the weight of SiO droplets at the growth tip.

  3. Low-temperature formation of silicon and silicon oxide structures

    NARCIS (Netherlands)

    Ishihara, R.; Trifunovic, M.; Van der Zwan, M.

    2016-01-01

    A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by

  4. L3 subshell alignment in bismuth induced by swift silicon ions

    Science.gov (United States)

    Kumar, Ajay; Agnihotri, A. N.; Misra, D.; Kasthurirangan, S.; Sarkadi, L.; Tribedi, L. C.

    2015-03-01

    Angular- and impact energy- dependence of L x-rays of bismuth in collisions with silicon ions has been measured. Unlike isotropic emission of the {{L}α }-group and the {{L}β }-group x-rays, the Ll x-ray yield was observed to have impact energy dependent anisotropy emission. The anisotropy parameter for the Ll x-ray line was obtained by using the intensity ratio of the Ll-to-other L x-rays in the same spectrum. The alignment parameter of the L3 subshell was deduced from the measured anisotropy parameter of the Ll x-ray and has been compared with those obtained from the collisional theoretical models based on the plane-wave Born approximation and its extension.

  5. Improved proton CT imaging using a bismuth germanium oxide scintillator

    Science.gov (United States)

    Tanaka, Sodai; Nishio, Teiji; Tsuneda, Masato; Matsushita, Keiichiro; Kabuki, Shigeto; Uesaka, Mitsuru

    2018-02-01

    Range uncertainty is among the most formidable challenges associated with the treatment planning of proton therapy. Proton imaging, which includes proton radiography and proton computed tomography (pCT), is a useful verification tool. We have developed a pCT detection system that uses a thick bismuth germanium oxide (BGO) scintillator and a CCD camera. The current method is based on a previous detection system that used a plastic scintillator, and implements improved image processing techniques. In the new system, the scintillation light intensity is integrated along the proton beam path by the BGO scintillator, and acquired as a two-dimensional distribution with the CCD camera. The range of a penetrating proton is derived from the integrated light intensity using a light-to-range conversion table, and a pCT image can be reconstructed. The proton range in the BGO scintillator is shorter than in the plastic scintillator, so errors due to extended proton ranges can be reduced. To demonstrate the feasibility of the pCT system, an experiment was performed using a 70 MeV proton beam created by the AVF930 cyclotron at the National Institute of Radiological Sciences. The accuracy of the light-to-range conversion table, which is susceptible to errors due to its spatial dependence, was investigated, and the errors in the acquired pixel values were less than 0.5 mm. Images of various materials were acquired, and the pixel-value errors were within 3.1%, which represents an improvement over previous results. We also obtained a pCT image of an edible chicken piece, the first of its kind for a biological material, and internal structures approximately one millimeter in size were clearly observed. This pCT imaging system is fast and simple, and based on these findings, we anticipate that we can acquire 200 MeV pCT images using the BGO scintillator system.

  6. Synthesis of binary bismuth-cadmium oxide nanorods with sensitive electrochemical sensing performance

    International Nuclear Information System (INIS)

    Wen, Yong; Pei, Lizhai; Wei, Tian

    2017-01-01

    Binary bismuth-cadmium oxide nanorods have been synthesized by a simple hydrothermal process without templates and additives. X-ray diffraction and high-resolution transmission electron microscopy reveal that the nanorods possess single crystalline tetragonal Bi 2 CdO 4 phase. Scanning electron microscopy and transmission electron microscopy images show that the length and diameter of the nanorods are 20-300 nm and 5-10 μm, respectively. The formation of the binary bismuth-cadmium oxide nanorods is closely related to the hydrothermal parameters. The electrochemical sensing performance of the binary bismuth-cadmium oxide nanorods has been investigated using the nanorods as glassy carbon electrode modifiers. The detection limit is 0.19 μM with a linear range of 0.0005-2 mM. The nanorod-modified glassy carbon electrode exhibits good electrocatalytic activity toward L-cysteine and great application potential for electrochemical sensors.

  7. Synthesis of binary bismuth-cadmium oxide nanorods with sensitive electrochemical sensing performance

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yong [Xinjiang Univ., Xinjiang (China). School of Civil Engineering and Architecture; Pei, Lizhai; Wei, Tian [Anhui Univ. of Technology, Anhui (China). School of Materials Science and Engineering

    2017-07-15

    Binary bismuth-cadmium oxide nanorods have been synthesized by a simple hydrothermal process without templates and additives. X-ray diffraction and high-resolution transmission electron microscopy reveal that the nanorods possess single crystalline tetragonal Bi{sub 2}CdO{sub 4} phase. Scanning electron microscopy and transmission electron microscopy images show that the length and diameter of the nanorods are 20-300 nm and 5-10 μm, respectively. The formation of the binary bismuth-cadmium oxide nanorods is closely related to the hydrothermal parameters. The electrochemical sensing performance of the binary bismuth-cadmium oxide nanorods has been investigated using the nanorods as glassy carbon electrode modifiers. The detection limit is 0.19 μM with a linear range of 0.0005-2 mM. The nanorod-modified glassy carbon electrode exhibits good electrocatalytic activity toward L-cysteine and great application potential for electrochemical sensors.

  8. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  9. Structure-Composition-Property Relationships of Complex Bismuth Oxide Based Photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, Thomas [Univ. of South Carolina, Columbia, SC (United States). Dept. of Chemistry and Biochemistry

    2014-01-08

    Development of a new family of up- and down-conversion materials based on oxtfluorides that can potentially increase photocatalytic activities of photocatalysts such as bismuth oxides and can also be used as phosphors in Al1-xGaxN-based devices and solar devices.

  10. Preparation of Bismuth Oxide Photocatalyst and Its Application in White-light LEDs

    Directory of Open Access Journals (Sweden)

    Yen-Chang Chu

    2013-01-01

    Full Text Available Bismuth oxide photocatalysts were synthesized and coated on the front surface of phosphor-converted white light-emitting diodes to produce a safe and environmentally benign lighting source. Bismuth oxide photocatalyst powders were synthesized with a spray pyrolysis method at 500°C, 600°C, 700°C, and 800°C. Using the absorption spectrum in the blue and UV regions of the bismuth oxide photocatalysts, the blue light and UV leakage problems of phosphor-converted white LEDs can be significantly reduced. The experimental results showed that bismuth oxide photocatalyst synthesized at 700°C exhibited the most superior spectrum inhibiting ability. The suppressed ratio reached 52.33% in the blue and UV regions from 360 to 420 nm. Related colorimetric parameters and the photocatalyst decomposition ability of fabricated white-light LEDs were tested. The CIE chromaticity coordinates (x,y were (0.349, 0.393, and the correlated color temperature was 4991 K. In addition, the coating layer of photocatalyst can act as an air purifier and diffuser to reduce glare. A value of 66.2±0.60 ppmv of molecular formaldehyde gas can be decomposed in 120 mins.

  11. Studying Impact of Different Precipitating Agents on Crystal Structure, Morphology and Photocatalytic Activity of Bismuth Oxide

    Directory of Open Access Journals (Sweden)

    Yayuk Astuti

    2017-10-01

    How to Cite: Astuti, Y., Arnelli, Pardoyo, Fauziyah, A., Nurhayati, S., Wulansari, A.D., Andianingrum, R., Widiyandari, H., Bhaduri, G.A. (2017. Studying Impact of Different Precipitating Agents on Crystal Structure, Morphology and Photocatalytic Activity of Bismuth Oxide. Bulletin of Chemical Reaction Engineering & Catalysis, 12 (3: 478-484 (doi:10.9767/bcrec.12.3.1144.478-484

  12. Porous structure of oxide bismuth-molybdenum catalysts applied to silica gel

    International Nuclear Information System (INIS)

    Mikhajlenko, E.L.; Tarasova, D.V.; Razumova, N.V.

    1982-01-01

    A study was made on the formation of porous structure of oxide bismuth-molybdenum catalysts applied to silica gel. It has been shown that the structure and phase composition of the catalysts are determined by an initial state of a carrier. When a stabilized zol is used as a carrier its purification during the synthesis takes place as a result of the sodium ion interaction with molybdenum and bismuth ions with the formation of NaBi(MoO 4 ) 2 phase. The change in the catalyst structure during heat treatment is specified by the carrier caking in the presence of the Bi 2 (MoO 4 ) 3 fusible phase

  13. Methylene blue photocatalysis in the presence of bismuth oxide under UV and solar light irradiation

    Directory of Open Access Journals (Sweden)

    Vanessa Rocha Liberatti

    2014-05-01

    Full Text Available Bismuth oxide (Bi2O3, an n-type semiconductor has been satisfactorily investigated for photocatalytic organic contaminant remediation. The Bi2O3 was prepared by solution combustion synthesis (SCS using as the oxidizing bismuth nitrate in acidic medium and urea as fuel. The influence of the type of synthesis on the photocatalytic properties of the oxide formed was investigated by XRD. From the diffractograms was verified that the materials obtained are predominantly of Bi2O3 crystals, it is possible to identify a sample with two crystalline phases, monoclinic (α-Bi2O3 and tetragonal (β-Bi2O3, and the other with only the monoclinic (α-Bi2O3. The two-phase oxide showed higher photocatalytic activity for discoloration of methylene blue under UV irradiation (60.59% and under sunlight (61.64% in 664 nm, followed kinetic law of pseudo-first order.

  14. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  15. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...

  16. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  17. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  18. Bismuth oxide film: a promising room-temperature quantum spin Hall insulator

    Science.gov (United States)

    Wang, Ya-Ping; Li, Sheng-Shi; Ji, Wei-Xiao; Zhang, Chang-Wen; Li, Ping; Wang, Pei-Ji

    2018-03-01

    Two-dimensional (2D) bismuth films have attracted extensive attention due to their nontrivial band topology and tunable electronic properties for achieving dissipationless transport devices. The experimental observation of quantum transport properties, however, are rather challenging, limiting their potential application in nanodevices. Here, we predict, based on first-principles calculations, an alternative 2D bismuth oxide, BiO, as an excellent topological insulator (TI), whose intrinsic bulk gap reaches up to 0.28 eV. Its nontrivial topology is confirmed by topological invariant Z 2 and time-reversal symmetry protected helical edge states. The appearance of topological phase is robust against mechanical strain and different levels of oxygen coverage in BiO. Since the BiO is naturally stable against surface oxidization and degradation, these results enrich the topological materials and present an alternative way to design topotronics devices at room temperature.

  19. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  20. Analysis of the color alteration and radiopacity promoted by bismuth oxide in calcium silicate cement

    Directory of Open Access Journals (Sweden)

    Marina Angelica Marciano

    2013-07-01

    Full Text Available The aim of the study was to determine if the increase in radiopacity provided by bismuth oxide is related to the color alteration of calcium silicate-based cement. Calcium silicate cement (CSC was mixed with 0%, 15%, 20%, 30% and 50% of bismuth oxide (BO, determined by weight. Mineral trioxide aggregate (MTA was the control group. The radiopacity test was performed according to ISO 6876/2001. The color was evaluated using the CIE system. The assessments were performed after 24 hours, 7 and 30 days of setting time, using a spectrophotometer to obtain the ΔE, Δa, Δb and ΔL values. The statistical analyses were performed using the Kruskal-Wallis/Dunn and ANOVA/Tukey tests (p 3 mm equivalent of Al. The MTA group was statistically similar to the CSC / 30% BO group (p > 0.05. In regard to color, the increase of bismuth oxide resulted in a decrease in the ΔE value of the calcium silicate cement. The CSC group presented statistically higher ΔE values than the CSC / 50% BO group (p < 0.05. The comparison between 24 hours and 7 days showed higher ΔE for the MTA group, with statistical differences for the CSC / 15% BO and CSC / 50% BO groups (p < 0.05. After 30 days, CSC showed statistically higher ΔE values than CSC / 30% BO and CSC / 50% BO (p < 0.05. In conclusion, the increase in radiopacity provided by bismuth oxide has no relation to the color alteration of calcium silicate-based cements.

  1. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid...

  2. Pharmacokinetics of metronidazole, tetracycline and bismuth in healthy volunteers after oral administration of compound tablets containing a combination of metronidazole, tetracycline hydrochloride and bismuth oxide.

    Science.gov (United States)

    Wu, Y; Ding, L; Huang, N-Y; Wen, A-D; Liu, B; Li, W-B

    2015-02-01

    To eradicate Helicobacter pylori in human pylorus and to heal duodenal ulcers, recently, a new formulation of combination tablets containing metronidazole 125 mg, tetracycline hydrochloride 125 mg and bismuth oxide 40 mg has been developed. To investigate the pharmacokinetics of metronidazole, tetracycline and bismuth in healthy Chinese volunteers after oral administration of the test formulation. A one-sequence, 3-period study was conducted in 12 Chinese healthy volunteers (6 male, 6 female). Volunteers each received single low dose (1 tablet) under fed condition in period 1, single high dose (3 tablets) under fasted condition in period 2, and single high dose (3 tablets) and multiple doses (3 tablets at once, 4 times daily for 7 consecutive days) under fed condition in period 3. Blood samples were collected and determined over 48 h in every period. After single high dose administration under fed condition, the C max of metronidazole, tetracycline and bismuth were 6.833 ± 0.742 μg/mL, 0.8513 ± 0.1253 μg/mL and 3.32 ± 1.89 ng/mL, respectively. The C max and AUC 0-48 of metronidazole increased in proportion to the doses within the tested dose range, but tetracycline and bismuth did not. Food caused 10% and 80% decrease of the C max for metronidazole and bismuth, respectively, but did not affect tetracycline. No gender effect was found on the pharmacokinetics of the 3 ingredients. In the steady state, the C av of metronidazole, tetracycline and bismuth were 20.75 ± 3.52 μg/mL, 1.900 ± 0.243 μg/mL and 5.61 ± 1.34 ng/mL, respectively. © Georg Thieme Verlag KG Stuttgart · New York.

  3. Assessment of color stability of white mineral trioxide aggregate angelus and bismuth oxide in contact with tooth structure.

    Science.gov (United States)

    Marciano, Marina Angélica; Costa, Reginaldo Mendonça; Camilleri, Josette; Mondelli, Rafael Francisco Lia; Guimarães, Bruno Martini; Duarte, Marco Antonio Hungaro

    2014-08-01

    Dental discoloration with use of materials containing bismuth oxide has been reported. It is postulated that the discoloration is a result of chemical interaction of bismuth oxide with dentin. The aim of the study was to analyze dental color alteration and the chemical interaction of bismuth oxide with the main components present in composite (methacrylate) and in dentin (collagen). Fifty bovine teeth were prepared and filled with white mineral trioxide aggregate (MTA) Angelus, Portland cement (PC) with 20% zirconium oxide, or PC with 20% calcium tungstate and then sealed with composite. Triple antibiotic paste and unfilled samples were the positive and negative controls, respectively. The specimens were stored in separate flasks immersed in tap water at 37°C with ambient light blocked out. The color assessment was performed with a spectrophotometer at different intervals, namely before filling and 24 hours, 15 days, and 30 days after filling. The color change and the luminosity were calculated. The statistical analysis was performed by using nonparametric Kruskal-Wallis and Dunn tests (P bismuth oxide, zirconium oxide, and calcium tungstate with collagen and methacrylate was assessed by placing the materials in contact, followed by color assessment. The analysis of color change values showed that all the materials presented color alteration after the evaluated periods. Statistically higher luminosity was verified for PC/20% zirconium oxide in comparison with white MTA Angelus (P Bismuth oxide exhibited a color change when in contact with collagen. The color of white MTA Angelus was altered in contact with dental structures. Collagen, which is present in dentin matrix, reacted with bismuth oxide, resulting in a grayish discoloration. The use of an alternative radiopacifier to replace bismuth in white MTA is indicated. Copyright © 2014 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  4. Some aspects of the behavior of barium, bismuth and strontium on silicon surfaces studied by TXRF

    International Nuclear Information System (INIS)

    Kilian, G.; Kolbesen, B.O.; Pamler, W.; Unger, E.; Hoepfner, A.

    2000-01-01

    Current dielectric film materials (SiO 2 , SiO 2 /Si 3 N 4 ) are one of the limiting factors for the scaling of microelectronic devices in the sub-quartermicron regime, in particular regarding the storage capacitor of dynamic random access memories (DRAMs). Alternative materials comprise films with high ε such as BaSrTiO 3 (BST) or films with ferroelectric behavior such as PbZrTiO 3 (PZT) or SrBi 2 Ta 2 O 9 (SBT). In order to integrate ferroelectric and high ε films into standard CMOS technology it is necessary to investigate possible detrimental effects on performance and reliability. In case of SBT, very little is known about the effect of Ba, Bi and Sr contamination on silicon device technology. Therefore, some aspects of their adsorption, desorption and diffusion behavior at room and higher temperature in inert (N 2 ) and oxidising (O 2 ) ambient have been studied by monitoring the Ba, Bi and Sr concentrations on silicon surfaces by total reflection x-ray fluorescence analysis (TXRF). Ba and Sr are incorporated in the existing or growing oxide during RTA. If O 2 is present the growing oxide on the silicon surface forms a barrier which forces the Bi to diffuse into the bulk. Hence, cross contamination due to gas phase transport may occur in the case of Bi under N 2 atmosphere but is of no concern in the case of Ba and Sr. (author)

  5. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

    Science.gov (United States)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-27

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al 2 O 3 ) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al 2 O 3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al 2 O 3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al 2 O 3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  6. Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, Celia L. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Depablos-Rivera, Osmary, E-mail: osmarydep@yahoo.com [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Silva-Bermudez, Phaedra [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Instituto Nacional de Rehabilitación, Calz. México Xochimilco No. 289 Col. Arenal de Guadalupe, C.P.14389, Ciudad de México, D.F. (Mexico); Muhl, Stephen [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 1 (France); Camps, Enrique [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca S/N, kilómetro 36.5. La Marquesa, Municipio de Ocoyoacac, CP 52750, Estado de México (Mexico); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico)

    2015-03-02

    The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi{sub 2}O{sub 3} thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi{sub 2}O{sub 3} phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi{sub 2}O{sub 3} thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV.

  7. First proof of bismuth oxide nanoparticles as efficient radiosensitisers on highly radioresistant cancer cells.

    Science.gov (United States)

    Stewart, Callum; Konstantinov, Konstantin; McKinnon, Sally; Guatelli, Susanna; Lerch, Michael; Rosenfeld, Anatoly; Tehei, Moeava; Corde, Stéphanie

    2016-11-01

    This study provides the first proof of the novel application of bismuth oxide as a radiosensitiser. It was shown that on the highly radioresistant 9L gliosarcoma cell line, bismuth oxide nanoparticles sensitise to both kilovoltage (kVp) or megavoltage (MV) X-rays radiation. 9L cells were exposed to a concentration of 50μg.mL -1 of nanoparticle before irradiation at 125kVp and 10MV. Sensitisation enhancement ratios of 1.48 and 1.25 for 125kVp and 10MV were obtained in vitro, respectively. The radiation enhancement of the nanoparticles is postulated to be a combination of the high Z nature of the bismuth (Z=83), and the surface chemistry. Monte Carlo simulations were performed to elucidate the physical interactions between the incident radiation and the nanoparticle. The results of this work show that Bi 2 O 3 nanoparticles increase the radiosensitivity of 9L gliosarcoma tumour cells for both kVp and MV energies. Monte Carlo simulations demonstrate the advantage of a platelet morphology. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  8. Bismuth germanate coupled to near ultraviolet silicon photomultipliers for time-of-flight PET

    Science.gov (United States)

    Kwon, Sun Il; Gola, Alberto; Ferri, Alessandro; Piemonte, Claudio; Cherry, Simon R.

    2016-09-01

    Bismuth germanate (BGO) was a very attractive scintillator in early-generation positron emission tomography (PET) scanners. However, the major disadvantages of BGO are lower light yield and longer rise and decay time compared to currently popular scintillators such as LSO and LYSO. This results in poorer coincidence timing resolution and it has generally been assumed that BGO is not a suitable scintillator for time-of-flight (TOF) PET applications. However, when a 511 keV photon interacts in a scintillator, a number of Cerenkov photons are produced promptly by energetic electrons released by photoelectric or Compton interactions. If these prompt photons can be captured, they could provide a better timing trigger for PET. Since BGO has a high refractive index (increasing the Cerenkov light yield) and excellent optical transparency down to 320 nm (Cerenkov light yield is higher at shorter wavelengths), we hypothesized that the coincidence timing resolution of BGO can be significantly improved by efficient detection of the Cerenkov photons. However, since the number of Cerenkov photons is far less than the number of scintillation photons, and they are more abundant in the UV and blue part of the spectrum, photosensors need to have high UV/blue sensitivity, fast temporal response, and very low noise in order to trigger on the faint Cerenkov signal. In this respect, NUV-HD silicon photomultipliers (SiPMs) (FBK, Trento, Italy) are an excellent fit for our approach. In this study, coincidence events were measured using BGO crystals coupled with NUV-HD SiPMs. The existence and influence of Cerenkov photons on the timing measurements were studied using different configurations to exploit the directionality of the Cerenkov emissions. Coincidence resolving time values (FWHM) of ~270 ps from 2  ×  3  ×  2 mm3 BGO crystals and ~560 ps from 3  ×  3  ×  20 mm3 BGO crystals were obtained. To our knowledge, these are the best

  9. Bismuth germanate coupled to near ultraviolet silicon photomultipliers for time-of-flight PET

    Science.gov (United States)

    Kwon, Sun Il; Gola, Alberto; Ferri, Alessandro; Piemonte, Claudio; Cherry, Simon R.

    2016-01-01

    Bismuth germanate (BGO) was a very attractive scintillator in early-generation positron emission tomography (PET) scanners. However, the major disadvantages of BGO are lower light yield and longer rise and decay time compared to currently popular scintillators such as LSO and LYSO. This results in poorer coincidence timing resolution and it has generally been assumed that BGO is not a suitable scintillator for time-of-flight (TOF) PET applications. However, when a 511-keV photon interacts in a scintillator, a number of Cerenkov photons are produced promptly by energetic electrons released by photoelectric or Compton interactions. If these prompt photons can be captured, they could provide a better timing trigger for PET. Since BGO has a high refractive index (increasing the Cerenkov light yield) and excellent optical transparency down to 320 nm (Cerenkov light yield is higher at shorter wavelengths), we hypothesized that the coincidence timing resolution of BGO can be significantly improved by efficient detection of the Cerenkov photons. However, since the number of Cerenkov photons is far less than the number of scintillation photons, and they are more abundant in the UV and blue part of the spectrum, photosensors need to have high UV/blue sensitivity, fast temporal response, and very low noise in order to trigger on the faint Cerenkov signal. In this respect, NUV-HD silicon photomultipliers (SiPMs) (FBK, Trento, Italy) are an excellent fit for our approach. In this study, coincidence events were measured using BGO crystals coupled with NUV-HD SiPMs. The existence and influence of Cerenkov photons on the timing measurements were studied using different configurations to exploit the directionality of the Cerenkov emissions. Coincidence resolving time values (FWHM) of ~270 ps from 2 × 3 × 2 mm3 BGO crystals and ~560 ps from 3 × 3 × 20 mm3 BGO crystals were obtained. To our knowledge, these are the best coincidence resolving time values reported for BGO to date

  10. Monte Carlo simulations for dose enhancement in cancer treatment using bismuth oxide nanoparticles implanted in brain soft tissue.

    Science.gov (United States)

    Taha, Eslam; Djouider, Fathi; Banoqitah, Essam

    2018-03-26

    The objective of this work is to study the dosimetric performances of bismuth oxide nanoparticles implanted in tumors in cancer radiotherapy. GEANT4 based Monte Carlo numerical simulations were performed to assess dose enhancement distributions in and around a 1 × 1 × 1 cm 3 tumor implanted with different concentrations of bismuth oxide and irradiated with low energies 125 I, 131 Cs, and 103 Pd radioactive sources. Dose contributions were considered from photoelectrons, Auger electrons, and characteristic X-rays. Our results show the dose enhancement increased with increasing both bismuth oxide concentration in the target and photon energy. A dose enhancement factor up to 18.55 was obtained for a concentration of 70 mg/g of bismuth oxide in the tumor when irradiated with 131 Cs source. This study showed that bismuth oxide nanoparticles are innovative agents that could be potentially applicable to in vivo cancer radiotherapy due to the fact that they induce a highly localized energy deposition within the tumor.

  11. Study of the bismuth oxide concentration required to provide Portland cement with adequate radiopacity for endodontic use.

    Science.gov (United States)

    Bueno, Carlos Eduardo da Silveira; Zeferino, Eduardo Gregatto; Manhães, Luiz Roberto Coutinho; Rocha, Daniel Guimarães Pedro; Cunha, Rodrigo Sanches; De Martin, Alexandre Sigrist

    2009-01-01

    The purpose of this study was to determine the ideal concentration of bismuth oxide in white Portland cement to provide it with sufficient radiopacity for use as an endodontic material (ADA specification #57). 2-mm thick standardized test specimens of white MTA and of white Portland cement, as controls, and of white Portland cement with the experimental addition of 5%, 10%, 15%, 20%, 25% or 30% of bismuth oxide were radiographed and compared with various thicknesses of pure aluminum, using optic density to determine the observed grayscale levels of radiopacity in a scale ranging from 0 to 255. The data was submitted to ANOVA (pPortland cement with 0%, 5%, 10%, 15%, 20%, 25% and 30% of bismuth oxide presented mean readings of 63.3, 95.7, 110.7, 142.7, 151.3, 161.0 and 180.0 respectively. MTA presented a mean reading of 157.3. The readings of MTA and white Portland cement with 15% bismuth oxide did not differ significantly from the reading observed for a thickness of 4 mm of aluminum (145.3), which is considered ideal for a test specimen by ADA specification #57 (2 mm above the thickness of the test specimen). White MTA and white Portland cement with 15% bismuth oxide presented the radiopacity required for an endodontic cement.

  12. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    Energy Technology Data Exchange (ETDEWEB)

    Wen, Yong, E-mail: yongwen1982@163.com [School of Civil Engineering and Architecture, Xinjiang University (China); Pei, Li-zhai; Wei, Tian [chool of Materials Science and Engineering, Anhui University of Technology (China)

    2017-05-15

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi{sub 2}O{sub 4} and cubic LiBi{sub 12}O{sub 18.50} phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  13. Growth of Li doped bismuth oxide nanorods and its electrochemical performance for the determination of L-cysteine

    International Nuclear Information System (INIS)

    Wen, Yong; Pei, Li-zhai; Wei, Tian

    2017-01-01

    Li doped bismuth oxide nanorods have been prepared using sodium bismuthate and Li acetate. X-ray diffraction (XRD) pattern shows that the nanorods are composed of monoclinic Bi 2 O 4 and cubic LiBi 12 O 18.50 phases. Scanning electron microscopy (SEM) observation shows that the nanorods have the length and diameter of 1-5 μm and 50-350 nm, respectively. The formation of the Li doped bismuth oxide nanorods is closely relative to the hydrothermal conditions. The electrochemical performance for the determination of L-cysteine based on a Li doped bismuth oxide nanorods modified glassy carbon electrode (GCE) has been developed. The CV peak current increases obviously and linearly with increasing the scan rate. Under the optimal conditions, Li doped bismuth oxide nanorods modified GCE exhibits good analytical performance with good reproducibility and stability. The linear range of L-cysteine is 0.0001-2 mM and the detection limit is 0.36 μM and 0.17 μM for cvp1 and cvp2, respectively. (author)

  14. Oxidative Dehydrogenation of n-Butenes to 1,3-Butadiene over Bismuth Molybdate and Ferrite Catalysts: A Review

    KAUST Repository

    Hong, Eunpyo

    2015-11-02

    1,3-Butadiene, an important raw material for a variety of chemical products, can be produced via the oxidative dehydrogenation (ODH) of n-butenes over multicomponent oxide catalysts based on bismuth molybdates and ferrites. In this review, the basic concept, reaction mechanism, and catalysts typically used in an ODH reaction are discussed. © 2015, Springer Science+Business Media New York.

  15. Oxide driven strength evolution of silicon surfaces

    Science.gov (United States)

    Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; Zehnder, Alan T.

    2015-11-01

    Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations show that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.

  16. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  17. Selective oxidation of propylene to acrolein by hydrothermally synthesized bismuth molybdates

    DEFF Research Database (Denmark)

    Schuh, Kirsten; Kleist, Wolfgang; Høj, Martin

    2014-01-01

    Hydrothermal synthesis has been used as a soft chemical method to prepare bismuth molybdate catalysts for the selective oxidation of propylene to acrolein. All obtained samples displayed a plate-like morphology, but their individual aspect ratios varied with the hydrothermal synthesis conditions...... of nitric acid during hydrothermal synthesis enhanced both propylene conversion and acrolein yield, possibly due to a change in morphology. Formation of β-Bi2Mo2O9 was not observed under the applied conditions. In general, the catalytic performance of all samples decreased notably after calcination at 550...

  18. Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

    Directory of Open Access Journals (Sweden)

    Liwei Liu

    2016-03-01

    Full Text Available Bismuth oxide (Bi2O3-doped yttria-stabilized zirconia (YSZ were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures.

  19. Silicon Carbide Nanotube Oxidation at High Temperatures

    Science.gov (United States)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  20. Simultaneous removal of Cr(VI) and phenol contaminants using Z-scheme bismuth oxyiodide/reduced graphene oxide/bismuth sulfide system under visible-light irradiation.

    Science.gov (United States)

    Chen, Acong; Bian, Zhaoyong; Xu, Jie; Xin, Xin; Wang, Hui

    2017-12-01

    An all-solid-state Z-scheme system containing Bi-based semiconductors bismuth oxyiodide (BiOI) and bismuth sulfide (Bi 2 S 3 ) was constructed on reduced graphene oxide (rGO) sheets through an electrostatic self-assembly method to simultaneously remove aqueous Cr(VI) and phenol. In this Z-scheme that mimicked natural photosynthesis, photoinduced electrons in the conduction band (CB) of BiOI were transferred through rGO and reacted with photoinduced holes in the valence band (VB) of Bi 2 S 3 , which significantly increased its photocatalytic activity. The reduction and oxidation reactions were performed on Bi 2 S 3 and BiOI photocatalysts, respectively. Furthermore, complex contaminants of coexisting heavy metal Cr(VI) and organic phenol were treated using the system under visible-light irradiation. Results showed that Cr(VI) reduction and phenol oxidation were achieved efficiently with optimum reductive and oxidative efficiencies up to 73% and 95% under visible-light irradiation, respectively. This work provided a promising method of simultaneously removing heavy metals and organic pollutants by using a Z-scheme system with enhanced photocatalytic activity. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

    International Nuclear Information System (INIS)

    Iljinas, A.; Burinskas, S.; Dudonis, J.

    2011-01-01

    In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates. (author)

  2. Oxidation mechanism of T91 steel in liquid lead-bismuth eutectic: with consideration of internal oxidation

    Science.gov (United States)

    Ye, Zhongfei; Wang, Pei; Dong, Hong; Li, Dianzhong; Zhang, Yutuo; Li, Yiyi

    2016-01-01

    Clarification of the microscopic events that occur during oxidation is of great importance for understanding and consequently controlling the oxidation process. In this study the oxidation product formed on T91 ferritic/martensitic steel in oxygen saturated liquid lead-bismuth eutectic (LBE) at 823 K was characterized at the nanoscale using focused-ion beam and transmission electron microscope. An internal oxidation zone (IOZ) under the duplex oxide scale has been confirmed and characterized systematically. Through the microscopic characterization of the IOZ and the inner oxide layer, the micron-scale and nano-scale diffusion of Cr during the oxidation in LBE has been determined for the first time. The micron-scale diffusion of Cr ensures the continuous advancement of IOZ and inner oxide layer, and nano-scale diffusion of Cr gives rise to the typical appearance of the IOZ. Finally, a refined oxidation mechanism including the internal oxidation and the transformation of IOZ to inner oxide layer is proposed based on the discussion. The proposed oxidation mechanism succeeds in bridging the gap between the existing models and experimental observations. PMID:27734928

  3. Elastic Behavior of Borate Glasses Containing Lead and Bismuth Oxides

    Directory of Open Access Journals (Sweden)

    Mehrdad Khanisanij

    2014-01-01

    Full Text Available PbO and Bi2O3 binary borate glasses with different compositions, (MOX(B2O31−X (M = Pb, Bi, have been characterized and ultrasonic velocity as well as density is taken into account. In addition, the results have been compared with those of Ag, K, and Li oxide borate glasses from others. The ultrasonic velocities (both longitudinal and transverse and density for (PbOX(B2O31−X and (Bi2O3X(B2O31−X have been measured accurately and elastic moduli as well as hardness and Poisson’s ratio was determined. It has been demonstrated that density and ultrasonic velocities are enhanced by increasing PbO and Bi2O3 molar fraction with different values for each borate glass composition. However, the enhancement of ultrasonic velocities did not carry on continuously and after reaching a maximum point, they fell down dramatically. Both PbO and Bi2O3 showed almost similar glass improvement in case of density, ultrasonic velocity, and elastic moduli.

  4. Tribochemistry of Bismuth and Bismuth Salts for Solid Lubrication.

    Science.gov (United States)

    Gonzalez-Rodriguez, Pablo; van den Nieuwenhuijzen, Karin J H; Lette, Walter; Schipper, Dik J; Ten Elshof, Johan E

    2016-03-23

    One of the main trends in the past decades is the reduction of wastage and the replacement of toxic compounds in industrial processes. Some soft metallic particles can be used as nontoxic solid lubricants in high-temperature processes. The behavior of bismuth metal particles, bismuth sulfide (Bi2S3), bismuth sulfate (Bi2(SO4)3), and bismuth oxide (Bi2O3) as powder lubricants was studied in a range of temperatures up to 580 °C. The mechanical behavior was examined using a high-temperature pin-on-disc setup, with which the friction force between two flat-contact surfaces was recorded. The bismuth-lubricated surfaces showed low coefficients of friction (μ ≈ 0.08) below 200 °C. Above the melting temperature of the metal powder at 271 °C, a layer of bismuth oxide developed and the friction coefficient increased. Bismuth oxide showed higher friction coefficients at all temperatures. Bismuth sulfide exhibited partial oxidation upon heating but the friction coefficient decreased to μ ≈ 0.15 above 500 °C, with the formation of bismuth oxide-sulfate, while some bismuth sulfate remained. All surfaces were studied by X-ray diffraction (XRD), confocal microscopy, high-resolution scanning electron microscopy (HR-SEM), and energy-dispersive X-ray spectroscopy (EDS). This study reveals how the partial oxidation of bismuth compounds at high temperatures affects their lubrication properties, depending on the nature of the bismuth compound.

  5. Selective oxidation of propene on bismuth molybdate and mixed oxides of tin and antimony and of uranium and antimony

    International Nuclear Information System (INIS)

    Pendleton, P.; Taylor, D.

    1976-01-01

    Propene + 18 0 2 reactions have been studied in a static reaction system on bismuth molybdate and mixed oxides of tin and antimony and of uranium and antimony. The [ 16 0] acrolein content of the total acrolein formed and the proportion of 16 0 in the oxygen of the carbon dioxide by-product have been determined. The results indicate that for each catalyst the lattice is the only direct source of the oxygen in the aldehyde, and that lattice and/or gas phase oxygen is used in carbon dioxide formation. Oxygen anion mobility appears to be greater in the molybdate catalyst than in the other two. (author)

  6. Bismuth molybdate catalysts prepared by mild hydrothermal synthesis: Influence of pH on the selective oxidation of propylene

    DEFF Research Database (Denmark)

    Schuh, Kirsten; Kleist, Wolfgang; Høj, Martin

    2015-01-01

    A series of bismuth molybdate catalysts with relatively high surface area was prepared via mild hydrothermal synthesis. Variation of the pH value and Bi/Mo ratio during the synthesis allowed tuning of the crystalline Bi-Mo oxide phases, as determined by X-ray diffraction (XRD) and Raman spectrosc...

  7. Incorporation of thiosemicarbazide in Amberlite IRC-50 for separation of astatine from α-irradiated bismuth oxide

    International Nuclear Information System (INIS)

    Roy, Kamalika; Basu, S.; Ramaswami, A.; Nayak, Dalia; Lahiri, Susanta

    2004-01-01

    A chelating resin was synthesized by incorporating thiosemicarbazide into Amberlite IRC-50, a weakly acidic polymer. Astatine radionuclides produced by α-irradiating bismuth oxide were separated using the newly synthesized chelating resin. The resin showed high selectivity for astatine. The adsorbed astatine was recovered using 0.1 M EDTA at pH∼10

  8. Influence of bismuth oxide concentration on the pH level and biocompatibility of white Portland cement

    Directory of Open Access Journals (Sweden)

    Marina Angélica MARCIANO

    2014-07-01

    Full Text Available Objectives: To investigate if there is a relation between the increase of bismuth oxide and the decrease of pH levels and an intensification of toxicity in the Portland cement. Material and Methods: White Portland cement (WPC was mixed with 0, 15, 20, 30 and 50% bismuth oxide, in weight. For the pH level test, polyethylene tubes were filled with the cements and immersed in Milli-Q water for 15, 30 and 60 days. After each period, the increase of the pH level was assessed. For the biocompatibility, two polyethylene tubes filled with the cements were implanted in ninety albino rats (n=6. The analysis of the intensity of the inflammatory infiltrate was performed after 15, 30 and 60 days. The statistical analysis was performed using the Kruskal-Wallis, Dunn and Friedman tests for the pH level and the Kruskal-Wallis and Dunn tests for the biological analysis (p0.05. For the inflammatory infiltrates, no significant statistical differences were found among the groups in each period (p>0.05. The 15% WPC showed a significant decrease of the inflammatory infiltrate from 15 to 30 and 60 days (p<0.05. Conclusions: The addition of bismuth oxide into Portland cement did not affect the pH level and the biological response. The concentration of 15% of bismuth oxide resulted in significant reduction in inflammatory response in comparison with the other concentrations evaluated.

  9. Study of ternary-component bismuth molybdate catalysts by 18O2 tracer in the oxidation of propylene to acrolein

    International Nuclear Information System (INIS)

    Ueda, W.; Moro-oka, Y.; Ikawa, T.

    1981-01-01

    Participation of lattice oxide ions of ternary-component bismuth molybdate catalysts M-Bi-Mo-O (M = Ni, Co, Mg, Mn, Ca, Sr, Ba, and Pb) was investigated using the 18 O 2 tracer in the selective oxidation of propylene to acrolein. The participation of the lattice oxide ions in the oxidation is prominent on every catalyst but the extent of the participation varies significantly depending on the structure of the catalyst. Only lattice oxide ions in the bismuth molybdate phase are incorporated into the oxidized products on the catalysts (M = Ni, Co, Mg, and Mn) where M have smaller ionic radius than Bi 3+ ; catalyst particles are composed of a shell of bismuth molybdates and a core of MMoO 4 . On the other hand, whole oxide ions in the active particles are involved in the oxidation on catalysts having a scheelite-type structure (M = Ca, Sr, Ba, and Pb) where M has a comparable ionic radius to Bi 3+

  10. Laser-induced oxidation kinetics of bismuth surface microdroplets on GaAsBi studied in situ by Raman microprobe analysis.

    Science.gov (United States)

    Steele, J A; Lewis, R A

    2014-12-29

    We report the cw-laser-induced oxidation of molecular-beam-epitaxy grown GaAsBi bismuth surface microdroplets investigated in situ by micro-Raman spectroscopy under ambient conditions as a function of irradiation power and time. Our results reveal the surface droplets are high-purity crystalline bismuth and the resultant Bi2O3 transformation to be β-phase and stable at room temperature. A detailed Raman study of Bi microdroplet oxidation kinetics yields insights into the laser-induced oxidation process and offers useful real-time diagnostics. The temporal evolution of new β-Bi2O3 Raman modes is shown to be well described by Johnson-Mehl-Avrami-Kolmogorov kinetic transformation theory and while this study limits itself to the laser-induced oxidation of GaAsBi bismuth surface droplets, the results will find application within the wider context of bismuth laser-induced oxidation and direct Raman laser processing.

  11. Photoconduction in silicon rich oxide films

    Science.gov (United States)

    Luna-López, J. A.; Aceves-Mijares, M.; Carrillo-López, J.; Morales-Sanchez, A.; Flores-Gracia, F. J.; Garcia-Salgado, G.

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  12. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  13. Electrical characterization of strontium titanate borosilicate glass ceramics system with bismuth oxide addition using impedance spectroscopy

    International Nuclear Information System (INIS)

    Thakur, O.P.; Kumar, Devendra; Parkash, Om; Pandey, Lakshman

    2003-01-01

    The ac electrical data, measured in the frequency range 0.1 kHz-1 MHz, were used to study the electrical response of strontium titanate borosilicate glass ceramic system with bismuth oxide addition. Complex plane plots from these electrical data for various glass ceramic samples reveal contributions from simultaneously operating polarization mechanisms to overall dielectric behavior. The complex modulus (M * ) representation of electrical data for various glass ceramic samples were found to be more informative. Equivalent circuit models, which represent the electrical behavior of glass ceramic samples, were determined using complex non-linear least square (CNLS) fitting. An attempt has been made to understand the dielectric behavior of various glass ceramics in terms of contributions arising from different polarization processes occurring at glassy matrix, crystalline phases, glass to crystal interface region and blocking electrodes. Glass ceramics containing SrTiO 3 and TiO 2 (rutile) phases show thermally stable dielectric behavior

  14. Optical and electrical properties of thin films of bismuth ferric oxide

    International Nuclear Information System (INIS)

    Cardona R, D.

    2014-01-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe 2 O 3 ) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO 3 in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO 3 composition. These samples showed a secondary phase (Bi 2 5FeO 4 0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe 2 O 3 ) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  15. Crystal structure and electrical properties of gadolinia doped bismuth oxide nanoceramic powders

    Energy Technology Data Exchange (ETDEWEB)

    Ar Latin-Small-Letter-Dotless-I , M. [Physics Department, Faculty of Sciences, Erciyes University, Kayseri (Turkey); Tasc Latin-Small-Letter-Dotless-I oglu, I.; Alt Latin-Small-Letter-Dotless-I ndal, S. [Physics Department, Faculty of Arts and Sciences, Gazi University, Ankara (Turkey); Uslu, I.; Aytimur, A. [Department of Chemistry Education, Gazi University, Ankara (Turkey); Karaaslan, T. [Physics Department, Faculty of Sciences, Erciyes University, Kayseri (Turkey); Kocyigit, S., E-mail: sergas_29@hotmail.com [Department of Chemistry Education, Gazi University, Ankara (Turkey)

    2012-10-15

    A novel method of fabrication of gadolinia doped bismuth oxide nanoceramic via the sol-gel technique is reported. Their thermal, structural and morphological properties are described by measurements of Differential Thermal Analysis/Thermal Gravimetry, X-ray Powder Diffraction and Scanning Electron Microscopy. The samples have stable high ion conductive face centered cubic {delta}-phase nanocrystalline structure. The electrical measurements of the nanoceramic powders were carried out in the temperature range of (689-1091 K) using 4-point probe technique. There is a transition between two distinct regions at 720 Degree-Sign C, which can be attributed to the order-disorder transition. This observation is supported by the differential thermal analysis measurements. The experimental results show that the value of conductivity increases with increasing temperature over linear parts characterized by two different activation energies. The conductivity data over whole measured temperature range were fitted to the Arrhenius equations of conductivity and it shows two linear regions with different slopes which correspond to low-temperature range (689-975 K) and high-temperature range (999-1091 K). The values of E{sub a1} and E{sub a2} were obtained from the slopes of ln {sigma}{sub DC} versus q/kT plot as 1.25 eV and 2.81 eV for low-temperature range and high-temperature range, respectively. -- Highlights: Black-Right-Pointing-Pointer Gadolinia doped bismuth oxide nanoceramic were produced via the sol-gel technique. Black-Right-Pointing-Pointer Structural characterizations were carried out by XRD and SEM techniques. Black-Right-Pointing-Pointer Thermal and electrical properties were evaluated by DTA/TG and 4-point probe. Black-Right-Pointing-Pointer Crystallite size was calculated using Scherrer equation. Black-Right-Pointing-Pointer The dislocation density, the microstrain and unit cell volume were calculated.

  16. Bismuth and polonium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Bismuth and polonium are the only elements in their respective chemical series that form cations. The lighter elements in both groups only form anions. Bismuth has trivalent and pentavalent oxidation states, but the latter is relatively unstable with respect to formation of the oxide. Polonium exhibits a range of oxidation states, with the divalent and tetravalent states forming the cations Po 2+ and PoO 2+ in aqueous solution. In aqueous solution, polonium(IV) forms the oxoanion PoO 2+ . Levy, Danford and Agron conducted X-ray diffraction studies of bismuth(III) solutions and established a structure for the hexameric species, Bi 6 (OH) 12 6+ . The reported data for the solubility constants of polymeric species of bismuth (III) are listed in this chapter. The stability and solubility constants derived at 25 C for zero ionic strength have been used to create a predominance speciation diagram for bismuth(III).

  17. Bismuth Subsalicylate

    Science.gov (United States)

    Pink Bismuth® ... Bismuth subsalicylate is used to treat diarrhea, heartburn, and upset stomach in adults and children 12 years of age and older. Bismuth subsalicylate is in a class of medications called ...

  18. Ex vivo assessment of genotoxicity and cytotoxicity in murine fibroblasts exposed to white MTA or white Portland cement with 15% bismuth oxide.

    Science.gov (United States)

    Zeferino, E G; Bueno, C E S; Oyama, L M; Ribeiro, D A

    2010-10-01

    To evaluate whether white mineral trioxide aggregate (MTA) or white Portland cement with 15% bismuth oxide were able to induce genetic damage and cellular death ex vivo. Aliquots of 1 × 10(4) murine fibroblasts were incubated at 37 °C for 3 h with MTA (white) or white Portland cement with 15% bismuth oxide, at final concentrations ranging from 10 to 1000 μg mL(-1) individually. Data of three independent repeats from the comet assay and the trypan blue exclusion test were assessed by the one-way anova followed by Tukey's test. Mineral trioxide aggregate or Portland cement containing bismuth oxide did not produce genotoxic effects with respect to the single-cell gel (comet) assay data for all concentrations evaluated. Furthermore, no cytotoxicity was observed for MTA or Portland cement. White MTA or white Portland cement containing 15% bismuth oxide were not genotoxic and cytotoxic. © 2010 International Endodontic Journal.

  19. Visible light photooxidative performance of a high-nuclearity molecular bismuth vanadium oxide cluster

    Directory of Open Access Journals (Sweden)

    Johannes Tucher

    2014-05-01

    Full Text Available The visible light photooxidative performance of a new high-nuclearity molecular bismuth vanadium oxide cluster, H3[{Bi(dmso3}4V13O40], is reported. Photocatalytic activity studies show faster reaction kinetics under anaerobic conditions, suggesting an oxygen-dependent quenching of the photoexcited cluster species. Further mechanistic analysis shows that the reaction proceeds via the intermediate formation of hydroxyl radicals which act as oxidant. Trapping experiments using ethanol as a hydroxyl radical scavenger show significantly decreased photocatalytic substrate oxidation in the presence of EtOH. Photocatalytic performance analyses using monochromatic visible light irradiation show that the quantum efficiency Φ for indigo photooxidation is strongly dependent on the irradiation wavelength, with higher quantum efficiencies being observed at shorter wavelengths (Φ395nm ca. 15%. Recycling tests show that the compound can be employed as homogeneous photooxidation catalyst multiple times without loss of catalytic activity. High turnover numbers (TON ca. 1200 and turnover frequencies up to TOF ca. 3.44 min−1 are observed, illustrating the practical applicability of the cluster species.

  20. Electrochemical impedance spectroscopy of oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Tiddia, Maria V. [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d' Armi, 09126 Cagliari (Italy)

    2014-04-01

    We present a study of the electrochemical oxidation process of porous silicon. We analyze the effect of the layer thickness (1.25–22 μm) and of the applied current density (1.1–11.1 mA/cm{sup 2}, values calculated with reference to the external samples surface) on the oxidation process by comparing the galvanostatic electrochemical impedance spectroscopy (EIS) measurements and the optical specular reflectivity of the samples. The results of EIS were interpreted using an equivalent circuit to separate the contribution of different sample parts. A different behavior of the electrochemical oxidation process has been found for thin and thick samples: whereas for thin samples the oxidation process is univocally related to current density and thickness, for thicker samples this is no more true. Measurements by Energy Dispersive Spectroscopy using a Scanning Electron Microscopy confirmed that the inhomogeneity of the electrochemical oxidation process is increased by higher thicknesses and higher currents. A possible explanation is proposed to justify the different behavior of thin and thick samples during the electrochemical process. - Highlights: • A multidisciplinary approach on porous Si electrochemical oxidation is proposed. • Electrochemical, optical, and structural characterizations are used. • Layer thickness and oxidation current effects are shown. • An explanation of the observed behavior is proposed.

  1. Effect of bismuth oxide on white mineral trioxide aggregate: chemical characterization and physical properties.

    Science.gov (United States)

    Grazziotin-Soares, R; Nekoofar, M H; Davies, T E; Bafail, A; Alhaddar, E; Hübler, R; Busato, A L S; Dummer, P M H

    2014-06-01

    To assess the effect of bismuth oxide (Bi2 O3 ) on the chemical characterization and physical properties of White mineral trioxide aggregate (MTA) Angelus. Commercially available White MTA Angelus and White MTA Angelus without Bi2 O3 provided by the manufacturer especially for this study were subjected to the following tests: Rietveld X-ray diffraction analysis (XRD), energy-dispersive X-ray analysis (EDX), scanning electron microscopy (SEM), compressive strength, Vickers microhardness test and setting time. Chemical analysis data were reported descriptively, and physical properties were expressed as means and standard deviations. Data were analysed using Student's t-test and Mann-Whitney U test (P = 0.05). Calcium silicate peaks were reduced in the diffractograms of both hydrated materials. Bismuth particles were found on the surface of White MTA Angelus, and a greater amount of particles characterized as calcium hydroxide was observed by visual examination on White MTA without Bi2 O3 . The material without Bi2 O3 had the shortest final setting time (38.33 min, P = 0.002), the highest Vickers microhardness mean value (72.35 MPa, P = 0.000) and similar compressive strength results (P = 0.329) when compared with the commercially available White MTA Angelus containing Bi2 O3 . The lack of Bi2 O3 was associated with an increase in Vickers microhardness, a reduction in final setting time, absence of Bi2 O3 peaks in diffractograms, as well as a large amount of calcium and a morphology characteristic of calcium hydroxide in EDX/SEM analysis. © 2013 International Endodontic Journal. Published by John Wiley & Sons Ltd.

  2. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  3. Thermoelectrics from silicon nanoparticles: the influence of native oxide

    Science.gov (United States)

    Petermann, Nils; Stötzel, Julia; Stein, Niklas; Kessler, Victor; Wiggers, Hartmut; Theissmann, Ralf; Schierning, Gabi; Schmechel, Roland

    2015-06-01

    Thermoelectric materials were synthesized by current-assisted sintering of doped silicon nanoparticles produced in a microwave-plasma reactor. Due to their affinity to oxygen, the nanoparticles start to oxidize when handled in air and even a thin surface layer of native silicon oxide leads to a significant increase in the oxide volume ratio. This results in a considerable incorporation of oxygen into the sintered pellets, thus affecting the thermoelectric performance. To investigate the necessity of inert handling of the raw materials, the thermoelectric transport properties of sintered nanocrystalline silicon samples were characterized with respect to their oxygen content. An innovative method allowing a quantitative silicon oxide analysis by means of electron microscopy was applied: the contrast between areas of high and low electrical conductivity was attributed to the silicon matrix and silicon oxide precipitates, respectively. Thermoelectric characterization revealed that both, electron mobility and thermal conductivity decrease with increasing silicon oxide content. A maximum figure of merit with zT = 0.45 at 950 °C was achieved for samples with a silicon oxide mass fraction of 9.5 and 21.4% while the sample with more than 25% of oxygen clearly indicates a negative impact of the oxygen on the electron mobility. Contribution to the Topical Issue "Silicon and Silicon-related Materials for Thermoelectricity", edited by Dario Narducci.

  4. Sol-Gel Synthesis and Characterization of Cubic Bismuth Zinc Niobium Oxide Nanopowders

    Directory of Open Access Journals (Sweden)

    Ganchimeg Perenlei

    2014-01-01

    Full Text Available Bismuth zinc niobium oxide (BZN was successfully synthesized by a diol-based sol-gel reaction utilizing metal acetate and alkoxide precursors. Thermal analysis of a liquid suspension of precursors suggests that the majority of organic precursors decompose at temperatures up to 150°C, and organic free powders form above 350°C. The experimental results indicate that a homogeneous gel is obtained at about 200°C and then converts to a mixture of intermediate oxides at 350–400°C. Finally, single-phased BZN powders are obtained between 500 and 900°C. The degree of chemical homogeneity as determined by X-ray diffraction and EDS mapping is consistent throughout the samples. Elemental analysis indicates that the atomic ratio of metals closely matches a Bi1.5ZnNb1.5O7 composition. Crystallite sizes of the BZN powders calculated from the Scherrer equation are about 33–98 nm for the samples prepared at 500–700°C, respectively. The particle and crystallite sizes increase with increased sintering temperature. The estimated band gap of the BZN nanopowders from optical analysis is about 2.60–2.75 eV at 500-600°C. The observed phase formations and measured results in this study were compared with those of previous reports.

  5. Crystal structures of a pentavalent bismuthate, SrBi2O6 and a lead bismuth oxide (Pb1/3Bi2/3O1.4

    Directory of Open Access Journals (Sweden)

    Nobuhiro Kumada

    2014-06-01

    Full Text Available The crystal structures of a pentavalent bismuthate, SrBi2O6 with the PbSb2O6-type structure and a lead bismuth oxide, (Pb1/3Bi2/3O1.4 with the fluorite-type structure were refined by using neutron diffraction data. The final R-factors were Rwp = 4.49, Rp = 3.46, RI = 4.50 and RF = 1.70% for SrBi2O6 and Rwp = 5.04, Rp = 3.93, RI = 5.47 and RF = 4.26% for (Pb1/3Bi2/3O1.4. SrBi2O6 prepared from NaBiO3·1.4H2O is the first example of the bismuthate with the PbSb2O6-type structure. The fluorite-type lead bismuth oxide, (Pb1/3Bi2/3O1.4 was obtained by heating the PbSb2O6-type lead bismuthate, PbBi2O5.9·H2O which was prepared also from NaBiO3·1.4H2O.

  6. Influence of bismuth oxide concentration on the pH level and biocompatibility of white Portland cement.

    Science.gov (United States)

    Marciano, Marina Angélica; Garcia, Roberto Brandão; Cavenago, Bruno Cavalini; Minotti, Paloma Gagliardi; Midena, Raquel Zanin; Guimarães, Bruno Martini; Ordinola-Zapata, Ronald; Duarte, Marco Antonio Hungaro

    2014-01-01

    To investigate if there is a relation between the increase of bismuth oxide and the decrease of pH levels and an intensification of toxicity in the Portland cement. White Portland cement (WPC) was mixed with 0, 15, 20, 30 and 50% bismuth oxide, in weight. For the pH level test, polyethylene tubes were filled with the cements and immersed in Milli-Q water for 15, 30 and 60 days. After each period, the increase of the pH level was assessed. For the biocompatibility, two polyethylene tubes filled with the cements were implanted in ninety albino rats (n=6). The analysis of the intensity of the inflammatory infiltrate was performed after 15, 30 and 60 days. The statistical analysis was performed using the Kruskal-Wallis, Dunn and Friedman tests for the pH level and the Kruskal-Wallis and Dunn tests for the biological analysis (p0.05). For the inflammatory infiltrates, no significant statistical differences were found among the groups in each period (p>0.05). The 15% WPC showed a significant decrease of the inflammatory infiltrate from 15 to 30 and 60 days (pPortland cement did not affect the pH level and the biological response. The concentration of 15% of bismuth oxide resulted in significant reduction in inflammatory response in comparison with the other concentrations evaluated.

  7. Bismuth oxide decorated graphene oxide nanocomposites synthesized via sonochemical assisted hydrothermal method for adsorption of cationic organic dyes.

    Science.gov (United States)

    Das, Trupti R; Patra, Santanu; Madhuri, Rashmi; Sharma, Prashant K

    2018-01-01

    Bismuth oxide decorated graphene oxide (Bi 2 O 3 @GO) nanocomposites were successfully synthesized by sonochemical method followed by hydrothermal treatment. The structural, morphology/microstructure and functional groups were investigated through X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Transmission Electron Microscopy (TEM) and Fourier Transform Infrared (FTIR) spectroscopy, respectively. In the FESEM and TEM studies, well dispersed Bi 2 O 3 nanoparticles of size 3-5nm were found uniformly distributed throughout the surface and edges of GO sheets. The HRTEM measurements on the Bi 2 O 3 nanoparticle decorated graphene oxide shows imaged lattice spacing of 3.2Å corresponding to (111) plane of Bi 2 O 3 which confirms the successful synthesis of bismuth oxide decorated graphene oxide (Bi 2 O 3 @GO) nanocomposite. The synthesized nanocomposite was employed for adsorption and removal of cationic organic dyes like RhB from industrial wastewater. The effect of various parameters, viz., contact time, temperature, pH and amount of adsorbent on the adsorption capability as well as dye removal capacity of the adsorbent was studied in detail. Under optimized conditions, like, contact time (65min), amount of adsorbent (5mg), temperature (35°) and pH (4), the adsorption capacity of GO and Bi 2 O 3 @GO were recorded and the percentage of removal was found to be 64% and 80.7% for GO and Bi 2 O 3 @GO, respectively. The Bi 2 O 3 @GO nanocomposite shows higher adsorption capacity (320mg/g) as compare to only GO (224mg/g). The adsorption isotherm follows both the Temkin as well as Langmuir isotherm having heat of sorption 65.88 with Langmuir constant of 13.13 corresponding to the complete monolayer coverage of 387.44mg/g. The adsorption kinetics also follow, both pseudo first order and intraparticle diffusion model with adsorption capacity of 84.91mg/g and intra particle diffusion rate constant of 10.53mg/g min 1/2 for Bi 2 O 3 @GO

  8. Hydrothermal deposition and characterization of silicon oxide nanospheres

    International Nuclear Information System (INIS)

    Pei, L.Z.

    2008-01-01

    Silicon oxide nanospheres with the average diameter of about 100 nm have been synthesized by hydrothermal deposition process using silicon and silica as the starting materials. The silicon oxide nanospheres were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectrum, respectively. The results show that large scale silicon oxide nanospheres with the uniform size are composed of Si and O showing the amorphous structure. Strong PL peak at 435 nm is observed demonstrating the good blue light emission property

  9. Infrared Dielectric Properties of Low-Stress Silicon Oxide

    Science.gov (United States)

    Cataldo, Giuseppe; Wollack, Edward J.; Brown, Ari D.; Miller, Kevin H.

    2016-01-01

    Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

  10. Epitaxial Oxides on Silicon by Pulsed Laser Deposition

    NARCIS (Netherlands)

    Dubbink, D.

    2017-01-01

    Within the perovskite oxides a wide range of physical properties can be found, making this class of materials interesting for use in new types of microelectronic devices. The microelectronic industry is silicon based, which requires integration of these oxides on silicon. This integration should be

  11. Chemical composition, radiopacity, and biocompatibility of Portland cement with bismuth oxide.

    Science.gov (United States)

    Hwang, Yun-Chan; Lee, Song-Hee; Hwang, In-Nam; Kang, In-Chol; Kim, Min-Seok; Kim, Sun-Hun; Son, Ho-Hyun; Oh, Won-Mann

    2009-03-01

    This study compared the chemical constitution, radiopacity, and biocompatibility of Portland cement containing bismuth oxide (experimental cement) with those of Portland cement and mineral trioxide aggregate (MTA). The chemical constitution of materials was determined by scanning electron microscopy and energy-dispersive X-ray analysis. The radiopacity of the materials was determined using the ISO/6876 method. The biocompatibility of the materials was tested by MTT assay and tissue reaction. The constitution of all materials was similar. However, the Portland cement and experimental cement were more irregular and had a larger particle size than MTA. The radiopacity of the experimental cement was similar to MTA. The MTT assay revealed MTA to have slightly higher cell viability than the other materials. However, there were no statistically significant differences between the materials, with the exception of MTA at 24 h. There was no significant difference in the tissue reaction between the experimental groups. These results suggest that the experimental cement may be used as a substitute for MTA.

  12. Progress in bismuth vanadate photoanodes for use in solar water oxidation.

    Science.gov (United States)

    Park, Yiseul; McDonald, Kenneth J; Choi, Kyoung-Shin

    2013-03-21

    Harvesting energy directly from sunlight as nature accomplishes through photosynthesis is a very attractive and desirable way to solve the energy challenge. Many efforts have been made to find appropriate materials and systems that can utilize solar energy to produce chemical fuels. One of the most viable options is the construction of a photoelectrochemical cell that can reduce water to H(2) or CO(2) to carbon-based molecules. Bismuth vanadate (BiVO(4)) has recently emerged as a promising material for use as a photoanode that oxidizes water to O(2) in these cells. Significant advancement in the understanding and construction of efficient BiVO(4)-based photoanode systems has been made within a short period of time owing to various newly developed ideas and approaches. In this review, the crystal and electronic structures that are closely related to the photoelectrochemical properties of BiVO(4) are described first, and the photoelectrochemical properties and limitations of BiVO(4) are examined. Subsequently, the latest efforts toward addressing these limitations in order to improve the performances of BiVO(4)-based photoanodes are discussed. These efforts include morphology control, formation of composite structures, composition tuning, and coupling oxygen evolution catalysts. The discussions and insights provided in this review reflect the most recent approaches and directions for general photoelectrode developments and they will be directly applicable for the understanding and improvement of other photoelectrode systems.

  13. Hyaluronic acid-functionalized bismuth oxide nanoparticles for computed tomography imaging-guided radiotherapy of tumor.

    Science.gov (United States)

    Du, Fengyi; Lou, Jiaming; Jiang, Rong; Fang, Zhengzou; Zhao, Xuefen; Niu, Yuanyuan; Zou, Shenqiang; Zhang, Miaomiao; Gong, Aihua; Wu, Chaoyang

    2017-01-01

    The inherent radioresistance and inaccuracy of localization of tumors weaken the clinical implementation effectiveness of radiotherapy. To overcome these limitations, hyaluronic acid-functionalized bismuth oxide nanoparticles (HA-Bi 2 O 3 NPs) were synthesized by one-pot hydrothermal method for target-specific computed tomography (CT) imaging and radiosensitization of tumor. After functionalization with hyaluronic acid, the Bi 2 O 3 NPs possessed favorable solubility in water and excellent biocompatibility and were uptaken specifically by cancer cells overexpressing CD44 receptors. The as-prepared HA-Bi 2 O 3 NPs exhibited high X-ray attenuation efficiency and ideal radiosensitivity via synergizing X-rays to induce cell apoptosis and arrest the cell cycle in a dose-dependent manner in vitro. Remarkably, these properties offered excellent performance in active-targeting CT imaging and enhancement of radiosensitivity for inhibition of tumor growth. These findings demonstrated that HA-Bi 2 O 3 NPs as theranostic agents exhibit great promise for CT imaging-guided radiotherapy in diagnosis and treatment of tumors.

  14. Hydrothermal synthesis and crystal structure of a new lithium copper bismuth oxide, LiCuBiO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Kumada, Nobuhiro, E-mail: kumada@yamanashi.ac.jp [Center for Crystal Science and Technology, University of Yamanashi, Miyamae-cho 7-32, Kofu 400-8511 (Japan); Nakamura, Ayumi [Center for Crystal Science and Technology, University of Yamanashi, Miyamae-cho 7-32, Kofu 400-8511 (Japan); Miura, Akira [Center for Crystal Science and Technology, University of Yamanashi, Miyamae-cho 7-32, Kofu 400-8511 (Japan); Faculty of Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628 (Japan); Takei, Takahiro [Center for Crystal Science and Technology, University of Yamanashi, Miyamae-cho 7-32, Kofu 400-8511 (Japan); Azuma, Masaki; Yamamoto, Hajime [Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Kanagawa 226-8503 (Japan); Magome, Eisuke; Moriyoshi, Chikako; Kuroiwa, Yoshihiro [Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8526 (Japan)

    2017-01-15

    A new lithium copper bismuth oxide, LiCuBiO{sub 4} was prepared by hydrothermal reaction using NaBiO{sub 3}0.1*4H{sub 2}O. The crystal structural model of this compound was refined by using synchrotron X-ray powder diffraction data. This bismuthate has the LiCuSbO{sub 4} related structure with the orthorhombic cell (Space group: Pnma) of a=10.9096(9), b=5.8113(5) and c=5.0073(4) Å, and the final R-factors were R{sub wp}=4.84 and R{sub p}=3.58%. This compound is the first example of a lithium copper bismuthate containing Bi{sup 5+}. An antiferromagnetic ordering of Cu{sup 2+} moment was observed at 6 K. - Graphical abstract: In the crystal structure of LiCuBiO{sub 4} all metal atoms are coordinated octahedrally by six O atoms and LiO{sub 6} and CuO{sub 6} octahedra form the one-dimensional chains by edge-sharing along the b-axis. The LiO{sub 6} and CuO{sub 6} chains form the layer by face-sharing in the bc plane. The Bi atoms are placed in that interlayer and BiO{sub 6} octahedra are edge-sharing with LiO{sub 6} and CuO{sub 6} octahedra. - Highlights: • A new lithium copper bismuth oxide, LiCuBiO{sub 4} is prepared by hydrothermal reaction. • The crystal structure of LiCuBiO{sub 4} is closely related with that of LiCuSbO{sub 4}. • This new compound exhibits an antiferromagnetic ordering of Cu{sup 2+} moment at 6 K.

  15. Nucleation and growth of lead oxide particles in liquid lead-bismuth eutectic.

    Science.gov (United States)

    Gladinez, Kristof; Rosseel, Kris; Lim, Jun; Marino, Alessandro; Heynderickx, Geraldine; Aerts, Alexander

    2017-10-18

    Liquid lead-bismuth eutectic (LBE) is an important candidate to become the primary coolant of future, generation IV, nuclear fast reactors and Accelerator Driven System (ADS) concepts. One of the main challenges with the use of LBE as a coolant is to avoid its oxidation which results in solid lead oxide (PbO) precipitation. The chemical equilibria governing PbO formation are well understood. However, insufficient kinetic information is currently available for the development of LBE-based nuclear technology. Here, we report the results of experiments in which the nucleation, growth and dissolution of PbO in LBE during temperature cycling are measured by monitoring dissolved oxygen using potentiometric oxygen sensors. The metastable region, above which PbO nucleation can occur, has been determined under conditions relevant for the operation of LBE cooled nuclear systems and was found to be independent of setup geometry and thus thought to be widely applicable. A kinetic model to describe formation and dissolution of PbO particles in LBE is proposed, based on Classical Nucleation Theory (CNT) combined with mass transfer limited growth and dissolution. This model can accurately predict the experimentally observed changes in oxygen concentration due to nucleation, growth and dissolution of PbO, using the effective interfacial energy of a PbO nucleus in LBE as a fitting parameter. The results are invaluable to evaluate the consequences of oxygen ingress in LBE cooled nuclear systems under normal operating and accidental conditions and form the basis for the development of cold trap technology to avoid PbO formation in the primary reactor circuit.

  16. Design of a new nanocomposite between bismuth nanoparticles and graphene oxide for development of electrochemical sensors.

    Science.gov (United States)

    Bindewald, Eduardo H; Schibelbain, Arthur F; Papi, Maurício A P; Neiva, Eduardo G C; Zarbin, Aldo J G; Bergamini, Márcio F; Marcolino-Júnior, Luiz H

    2017-10-01

    This study describes a new route for preparation of a nanocomposite between graphene oxide (GO) and bismuth nanoparticles (BiNPs) and its evaluation as modifier electrode for development of electrochemical sensors. BiNPs were synthesized under ultrasound conditions using Bi(NO 3 ) 3 as metal precursor and ascorbic acid (AA) as reducing agent/passivating. Some experimental parameters of BiNPs synthesis such as Bi 3+ :AA molar ratio and reaction time were conducted aiming the best voltammetric performance of the sensor. Glassy carbon electrodes (GCE) were modified by drop-casting with the BiNPs dispersions and anodic stripping voltammetry measurements were performed and revealed an improvement in the sensitivityfor determination of Cd(II) and Pb(II) compared to an unmodified electrode. The best electrochemical response was obtained for a BiNPs synthesis with Bi 3+ :AA molar ratio of 1:6 and reaction time of 10min, which yielded Bi metallic nanoparticles with average size of 5.4nm confirmed by XRD and TEM images, respectively. GO was produced by graphite oxidation using potassium permanganate and exfoliated with an ultrasound tip. GO-BiNPs nanocomposite was obtained by a simple mixture of GO and BiNPs dispersions in water and kept under ultrasonic bath for 1h. GCE were modified with a nanocomposite suspension containing 0.3 and 1.5mgmL -1 of GO and BiNPs in water, respectively. Under optimized conditions, the proposed nanocomposite was evaluated on the voltammetric determination of Pb (II) and Cd (II), leading to a linear response range between 0.1 and 1.4μmolL -1 for both cations, with limit of detection of 30 and 27nmolL -1 , respectively. These results indicate the great potential of the GO-BiNPs nanocomposite for improving the sensitivity of voltammetric procedures. Copyright © 2017 Elsevier B.V. All rights reserved.

  17. High temperature superconducting material: Bismuth strontium calcium copper oxide. (Latest citations from the Aerospace database). Published Search

    International Nuclear Information System (INIS)

    1993-11-01

    The bibliography contains citations concerning the development, fabrication, and analysis of a high temperature superconducting material based on bismuth-strontium-calcium-copper-oxides (Bi-Sr-Ca-Cu-O). Topics include the physical properties, structural and compositional analysis, magnetic field and pressure effects, and noble metal dopings of Bi-Sr-Ca-Cu-O based systems. The highest transition temperature recorded to date for this material was 120 degrees Kelvin. Fabrication methods and properties of Bi-Sr-Ca-Cu-O films and ceramics are also considered. (Contains 250 citations and includes a subject term index and title list.)

  18. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  19. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  20. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  1. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  2. Crystalline structure and propylene oxidation in complex bismuth-molybdenum oxide catalysts

    International Nuclear Information System (INIS)

    Manaila, R.; Ionescu, N.I.; Caldararu, M.

    1980-01-01

    Complex Bi-Mo oxide catalysts supported on amorphous SiO 2 were prepared by coprecipitation and tested in the reaction of selective oxidation of propylene to acrolein. They consist of a mixture of molybdate phases and excess MoO 3 . The Fe 2 (MoO 4 ) 3 phase was found to have a high concentration of lattice defects, induced by a Mo excess. These defects could be related to the catalytic conversion and to the selectivity to total oxidation by varying the calcination temperature. Calcination above 500 0 C induced also the transition of the metastable modification β-NiMoO 4 to the stable form α, accompanied by a loss of conversion. A complex Bi molybdate with scheelitic structure was found to have a high selectivity to acrolein. (author)

  3. Hydrogen Treatment and FeOOH overlayer: Effective approaches for enhancing the photoelectrochemical water oxidation performance of bismuth vanadate thin films

    DEFF Research Database (Denmark)

    Singh, Aadesh P.; Saini, Nishant; Mehta, Bodh R.

    2018-01-01

    The water oxidation capability of the promising photoanode bismuth vanadate (BiVO4) is hampered by poor bulk electron transport and by high rates of charge recombination at the semiconductor/electrolyte interface. Here, we demonstrate that a dual modification of BiVO4 by: (i) annealing in a hydro......The water oxidation capability of the promising photoanode bismuth vanadate (BiVO4) is hampered by poor bulk electron transport and by high rates of charge recombination at the semiconductor/electrolyte interface. Here, we demonstrate that a dual modification of BiVO4 by: (i) annealing...

  4. The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

    Directory of Open Access Journals (Sweden)

    Kulinich O. A.

    2008-10-01

    Full Text Available The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.

  5. Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon-Oxide-Nitride-Oxide-Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology

    Science.gov (United States)

    Chen, Henry J. H.; Huang, Chien-Jen

    2013-02-01

    This work addresses the characteristics of a nonvolatile polycrystalline-silicon thin-film-transistor silicon-oxide-nitride-oxide-silicon (SONOS) memory with periodical finlike channels fabricated using nanoimprint lithography. The polycrystalline silicon periodical finlike channels were fabricated using ultraviolet (UV) nano-imprint lithography and studied by transmission electron microscopy (TEM). The memories with periodical finlike channels have lower operation voltage, higher programming speed, larger memory window, and better endurance and data retention than those with a single channel. The proposed approach can be utilized to fabricate a high-performance thin-film-transistor memory at a low cost.

  6. Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films.

    Science.gov (United States)

    Morales-Sánchez, A; Barreto, J; Domínguez, C; Aceves, M; Yu, Z; Luna-López, J A

    2008-04-23

    Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) followed by a thermal annealing at 1100 °C. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade (CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.

  7. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  8. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem

  9. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  10. Waveguiding properties of Er-implanted silicon-rich oxides

    International Nuclear Information System (INIS)

    Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

    2007-01-01

    The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

  11. Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

    Science.gov (United States)

    Chien-Jen Yang, Terry; Nomoto, Keita; Puthen-Veettil, Binesh; Lin, Ziyun; Wu, Lingfeng; Zhang, Tian; Jia, Xuguang; Conibeer, Gavin; Perez-Wurfl, Ivan

    2017-07-01

    Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

  12. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  13. Study of multiphasic molybdate-based catalysts. II. Synergy effect between bismuth molybdates and mixed iron and cobalt molybdates in mild oxidation of propene

    Energy Technology Data Exchange (ETDEWEB)

    Millet, J.M.M.; Ponceblanc, H.; Coudurier, G.; Vedrine, J.C. (Institut de Recherches sur la Catalyse, Villeurbanne (France)); Herrmann, J.M. (Laboratoire de Photocatalyse, Ecully (France))

    1993-08-01

    Results are reported concerning the synergy effect observed in the oxidation of propene to acrolein over bismuth and mixed iron and cobalt molybdates. The pure bismuth, iron, and cobalt molybdates and mixed cobalt and iron molybdates (solid solutions) have been prepared and individually tested as catalysts. Mechanical mixtures of these phases have been prepared and tested as catalysts. All the catalysts have been characterized before and after the catalytic reaction by several techniques such as ESR, XPS, EDX-STEM, TEM, XRD, and Moessbauer and UV spectroscopies. The synergy effect observed is tentatively explained as due to the deposition on the large bismuth molybdate particles of smaller mixed iron and cobalt molybdate particles with spreading of the bismuth molybdate over the latter particles. It is proposed that the Fe[sub x]Co[sub 1-x]MoO[sub 4] phase plays the role of the fast electron conducting material which enhances the electron mobility and the efficiency of the redox mechanism, the active and selective phase being the overlying bismuth molybdate compounds. 27 refs., 5 figs., 7 tabs.

  14. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    Science.gov (United States)

    1980-11-30

    Continuo on r.vers side it nec..eary and iden0 y by block nmber)I : silicon nitride ~ceramics :! corrosion strength oxidation 20. 4 ACT (Continue on...concentration that optimizes densifi- cation during hot pressing can be altered to improve mechanical properties and oxidation resistance by removing Mg...the intergranular phase to improve the high-temperature- strength, creep resistance, and oxidation resistance. Preoxidation followed by surface

  15. Dissolution and oxidation behaviour of various austenitic steels and Ni rich alloys in lead-bismuth eutectic at 520 °C

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Marion, E-mail: marion.roy@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Martinelli, Laure, E-mail: laure.martinelli@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Ginestar, Kevin, E-mail: kevin.ginestar@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Favergeon, Jérôme, E-mail: jerome.favergeon@utc.fr [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France); Moulin, Gérard [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France)

    2016-01-15

    Ten austenitic steels and Ni rich alloys were tested in static lead-bismuth eutectic (LBE) at 520 °C in order to obtain a selection of austenitic steels having promising corrosion behaviour in LBE. A test of 1850 h was carried out with a dissolved oxygen concentration between 10{sup −9} and 5 10{sup −4} g kg{sup −1}. The combination of thermodynamic of the studied system and literature results leads to the determination of an expression of the dissolved oxygen content in LBE as a function of temperature: RT(K)ln[O](wt%) = −57584/T(K) −55.876T(K) + 254546 (R is the gas constant in J mol{sup −1} K{sup −1}). This relation can be considered as a threshold of oxygen content above which only oxidation is observed on the AISI 316L and AISI 304L austenitic alloys in static LBE between 400 °C and 600 °C. The oxygen content during the test leads to both dissolution and oxidation of the samples during the first 190 h and leads to pure oxidation for the rest of the test. Results of mixed oxidation and dissolution test showed that only four types of corrosion behaviour were observed: usual austenitic steels and Ni rich alloys behaviour including the reference alloy 17Cr-12Ni-2.5Mo (AISI 316LN), the 20Cr-31Ni alloy one, the Si containing alloy one and the Al containing alloy one. According to the proposed criteria of oxidation and dissolution kinetics, silicon rich alloys and aluminum rich alloy presented a promising corrosion behaviour. - Highlights: • 10 austenitic steels and Ni rich alloys were tested in LBE at 520 °C with dissolved oxygen content between 10{sup -9} and 5 10{sup -4} wt%. • It is shown that only thermodynamics cannot explain the Ni rich alloys corrosion behaviour in LBE. • The role of oxygen on corrosion behaviour in LBE was highlighted. • An equilibrium line was defined above which only oxidation has occurred on 316L: RTln[O](wt%) = -57584/T(K)-55.876T(K)+254546. • 18Cr-15Ni-3.7Si, 21Cr-11Ni-1.6Si and 14Cr-25Ni-3.5Al

  16. Investigation of iron-bismuth-molybdenum catalysts

    International Nuclear Information System (INIS)

    Ven'yaminov, S.A.; Barannik, G.B.; Pitaeva, A.N.; Sazonova, N.N.; Plyasova, L.M.

    1977-01-01

    The catalytic properties of an oxide iron-bismuth-molybdenum system in reactions of oxidative ammonolysis of propylene and oxidative dehydrogenation of butene-1 are investigated. It is shown that catalysts containing double molybdate of bismuth and iron (the X-phase) exhibit an increased catalytic activity as compared with bismuth molybdate (Bi 2 O 3 x3MoO 3 ). Preliminary reduction of such specimens increases their activity and selectivity in subsequent work under conditions of a stationary course of the oxidation reaction. The activity and selectivity of catalysts containing only bismuth molybdate and iron molybdate are due to the additivity of the properties of the separate molybdates

  17. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A; Aceves-Mijares, M [INAOE, Electronics Department, Apartado 51, Puebla, 72000 (Mexico); Barreto, J; DomInguez, C [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Peralvarez, M; Garrido, B [EME, Departament d' Electronica, Universitat de Barcelona, MartI i Franques 1, 08028 Barcelona (Spain); Luna-Lopez, J A, E-mail: amorales@inaoep.mx [CIDS-BUAP, Apartado 1651, Puebla, Pue, 72000 (Mexico)

    2010-02-26

    Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 deg. C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths-across the SRO film- has been proposed to explain the EL behaviour in these devices.

  18. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  19. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  20. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  1. Synergy Effects of the Mixture of Bismuth Molybdate Catalysts with SnO2/ZrO2/MgO in Selective Propene Oxidation and the Connection between Conductivity and Catalytic Activity

    DEFF Research Database (Denmark)

    Le, Minh Thang; Do, Van Hung; Truong, Duc Duc

    2016-01-01

    Bismuth molybdate catalysts have been used for partial oxidation and ammoxidation of light hydrocarbons since the 1950s. In particular, there is the synergy effect (the enhancement of the catalytic activity in the catalysts mixed from different components) in different phases of bismuth molybdate...... for the question: does the electrical conductivity influence the catalytic activity (which has been previously proposed by some authors). In this work, highly conductive materials (SnO2, ZrO2) and nonconductive materials (MgO) are added to beta bismuth molybdates (beta-Bi2Mo2O9) using mechanical mixing...... of these mixtures showed that the addition of 10% mol SnO2 to beta bismuth molybdate resulted in the highest activity while the addition of nonconductive MgO could not increase the catalytic activity. This shows that there may be a connection between conductivity and catalytic activity in the mixtures of bismuth...

  2. Development of an oxidized porous silicon vacuum microtriode

    Energy Technology Data Exchange (ETDEWEB)

    Smith, II, Don Deewayne [Texas A & M Univ., College Station, TX (United States)

    1994-05-01

    In order to realize a high-power microwave amplifier design known as a gigatron, a gated field emission array must be developed that can deliver a high-intensity electron beam at gigahertz frequencies. No existing field emission device meets the requirements for a gigatron cathode. In the present work, a porous silicon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the nanometer scale, and a true two-dimensional array geometry can be approached. A wide number of applications for such a device exist in various disciplines. Oxidized porous silicon vacuum diodes were first developed in 1990. No systematic study had been done to characterize the performance of these devices as a function of the process parameters. The author has done the first such study, fabricating diodes from p<100>, p<111>, and n<100> silicon substrates. Anodization current densities from 11 mA/cm2 to 151 mA/cm2 were used, and Fowler-Nordheim behavior was observed in over 80% of the samples. In order to effectively adapt this technology to mainstream vacuum microelectronic applications, a means of creating a gated triodic structure must be found. No previous attempts had successfully yielded such a device. The author has succeeded in utilizing a novel metallization method to fabricate the first operational oxidized porous silicon vacuum microtriodes, and results are encouraging.

  3. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    Science.gov (United States)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  4. Silicon nanowire circuits fabricated by AFM oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, Ramses V; MartInez, Javier; Garcia, Ricardo, E-mail: rgarcia@imm.cnm.csic.es [Instituto de Microelectronica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)

    2010-06-18

    We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way, uniform and well-defined transistors with channel widths in the 10-20 nm range have been fabricated. The nanowires can be positioned with sub-100 nm lateral accuracy. The transistors exhibit an on/off current ratio of 10{sup 5}. The atomic force microscope nanolithography offers full control of the nanowire's shape from straight to circular or a combination of them. It also enables the integration of several nanowires within the same circuit. The nanowire transistors have been applied to detect immunological processes.

  5. Evaluating X-ray absorption of nano-bismuth oxide ointment for decreasing risks associated with X-ray exposure among operating room personnel and radiology experts

    Directory of Open Access Journals (Sweden)

    M. Rashidi

    2015-12-01

      Conclusion: It seems that due to higher atomic number and lower toxicity, Bi2O3 nanoparticles have better efficiency in X-ray absorbtion, comparing to the lead. Cream and ointment of bismuth oxide nanoparticles can be used as X-ray absorbant for different professions such as physicians, dentists, radiology experts, and operating room staff and consequently increase health and safety of these employees.

  6. Investigation of gamma ray shielding efficiency and mechanical performances of concrete shields containing bismuth oxide as an environmentally friendly additive

    Science.gov (United States)

    Yao, Ya; Zhang, Xiaowen; Li, Mi; Yang, Rong; Jiang, Tianjiao; Lv, Junwen

    2016-10-01

    Concrete has a proven ability to attenuate gamma rays and neutrons without compromising structural property; therefore, it is widely used as the primary shielding material in many nuclear facilities. Recently, there is a tendency toward using various additives to enhance the shielding properties of these concrete mixtures. However, most of these additives being used either pose hygiene hazards or require special handling processes. It would be ideal if environmentally friendly additives were available for use. The bismuth oxide (Bi2O3) additive shows promise in various shielding applications due to its proven radiation attenuation ability and environmentally friendly nature. To the best of our knowledge, however, Bi2O3 has never been used in concrete mixtures. Therefore, for this research, we fabricated the Bi2O3-based concrete mixtures by adding Bi2O3 powder in the ordinary concrete mixture. Concrete mixtures with lead oxide (PbO) additives were used for comparison. Radiation shielding parameters like the linear attenuation coefficients (LAC) of all these concrete mixtures showing the effects of the Bi2O3 additions are presented. The mechanical performances of concrete mixtures incorporated with Bi2O3 additive were also investigated. It suggested that the concrete mixture containing 25% Bi2O3 powder (B5 in this study) provided the best shielding capacity and mechanical performance among other mixes. It has a significant potential for application as a structural concrete where radiological protection capability is required.

  7. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  8. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  9. Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

    CERN Document Server

    Baraban, A P

    2002-01-01

    One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

  10. The Relationship Between Structural and Catalytic Activity of α and γ-Bismuth-Molybdate Catalysts for Partial Oxidation of Propylene to Acrolein

    Science.gov (United States)

    Fansuri, H.; Pham, G. H.; Wibawanta, S.; Zhang, D. K.; French, David

    Bismuth-molybdate catalysts are known to be effective for catalytic partial oxidation of propylene to acrolein. Their properties and the kinetics and reaction mechanisms for acrolein production have been extensively studied, especially in their basic forms, such as α, β, and γ-bismuth-molybdate. Although the reaction mechanisms have been reported widely in the literature, a general agreement has not been reached, especially from a catalyst-structure point of view. The present contribution reports an effort to understand the structural changes of α and γ-bismuth-molybdate catalysts at varying temperatures as examined using high temperature XRD and to relate the catalyst performance (activity and selectivity) for propylene partial oxidation to acrolein. The XRD analysis was performed at temperature between 250 and 450°C in ambient atmosphere and the Rietveld refinement method was used to extract unit cell parameters. The results showed a distinct similarity between the shapes of the thermal expansion of the catalysts and their activity and selectivity curves, indicating a significant role that the catalyst interatomic structure plays in the overall reaction mechanism.

  11. Synthesis of mesoporous bismuth-impregnated aluminum oxide for arsenic removal: Adsorption mechanism study and application to a lab-scale column.

    Science.gov (United States)

    Zhu, Ningyuan; Qiao, Jun; Ye, Yanfang; Yan, Tingmei

    2018-04-01

    High mobility and toxicity of arsenic [As (III)] limit its removal from an aquatic environment and pose a threat to human health. In this work, batch adsorption experiments were conducted to investigate the adsorption capacity of bismuth-impregnated aluminum oxide (BiAl). Continuous application of As (III) removal was achieved via a lab-scale column reactor. Bismuth impregnation decreased the specific surface area of aluminum oxide and affected its pore size distribution. However, because of its abundant and well-proportioned mesoporous character, it also enhanced its adsorption capacity through the surface complexation of As (III). Batch adsorption experiments demonstrated a suitable Freundlich model and a fitted pseudo-second-kinetic model for As (III) adsorption. The main mechanism was chemisorption with both bismuth and aluminum atoms; however, physisorption also contributed to arsenic adsorption at the initial stage of the reaction. The Adams-Bohart model better described the breakthrough curves than the Thomas model. BiAl exhibited efficient As (III) adsorption over a wide pH range and could be applied to As (III) removal from wastewater. A high As (III) removal efficiency (91.6%) was obtained at an initial As (III) concentration of 5 mg L -1 at a flow rate of 1 mL min -1 . This study indicates the potential for the practical application of BiAl in As (III) removal. Copyright © 2018 Elsevier Ltd. All rights reserved.

  12. Engineering functionalized multi-phased silicon/silicon oxide nano-biomaterials to passivate the aggressive proliferation of cancer

    Science.gov (United States)

    Premnath, P.; Tan, B.; Venkatakrishnan, K.

    2015-01-01

    Currently, the use of nano silicon in cancer therapy is limited as drug delivery vehicles and markers in imaging, not as manipulative/controlling agents. This is due to limited properties that native states of nano silicon and silicon oxides offers. We introduce nano-functionalized multi-phased silicon/silicon oxide biomaterials synthesized via ultrashort pulsed laser synthesis, with tunable properties that possess inherent cancer controlling properties that can passivate the progression of cancer. This nanostructured biomaterial is composed of individual functionalized nanoparticles made of a homogenous hybrid of multiple phases of silicon and silicon oxide in increasing concentration outwards from the core. The chemical properties of the proposed nanostructure such as number of phases, composition of phases and crystal orientation of each functionalized nanoparticle in the three dimensional nanostructure is defined based on precisely tuned ultrashort pulsed laser-material interaction mechanisms. The amorphous rich phased biomaterial shows a 30 fold (95%) reduction in number of cancer cells compared to bulk silicon in 48 hours. Further, the size of the cancer cells reduces by 76% from 24 to 48 hours. This method exposes untapped properties of combination of multiple phases of silicon oxides and its applications in cancer therapy. PMID:26190009

  13. Microstructure and electrical properties of bismuth and bismuth oxide deposited by magnetron sputtering UBM; Microestructura y propiedades electricas de bismuto y oxido de bismuto depositados por magnetron sputtering UBM

    Energy Technology Data Exchange (ETDEWEB)

    Otalora B, D. M.; Dussan, A. [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Carrera 30 No. 45-03, 111321 Bogota (Colombia); Olaya F, J. J., E-mail: jjolayaf@unal.edu.co [Universidad Nacional de Colombia, Facultad de Ingenieria, Departamento de Ingenieria Mecanica y Mecatronica, Carrera 30 No. 45-03, 111321 Bogota (Colombia)

    2015-07-01

    In this work, bismuth (Bi) and bismuth oxide (Bi{sub 2}O{sub 3}) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42 grades and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi{sub 2}O{sub 3}. From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi{sub 2}O{sub 3} and Bi, respectively. (Author)

  14. Bismuth oxyiodide incorporated reduced graphene oxide nanocomposite material as an efficient photocatalyst for visible light assisted degradation of organic pollutants

    Science.gov (United States)

    Vinoth, R.; Babu, S. Ganesh; Ramachandran, R.; Neppolian, B.

    2017-10-01

    Herein, Bismuth oxyiodide (BiOI) - reduced graphene oxide (rGO) photocatalysts were prepared via simple hydrothermal method. The BiOI-rGO photocatalyst exhibited high crystallinity with tetragonal phase of BiOI. In addition, the electronic interaction between rGO sheet and BiOI reduced the band-gap value from 1.86 eV of bare BiOI to 1.51 eV of BiOI-rGO (6 wt%) photocatalyst. More interestingly, the rGO showed a strong influence on tailoring the morphology of BiOI to different nanostructures with different rGO loading (wt%), which further reflected differences in the photocatalytic activity. A significant quenching in the photoluminescence intensity of rGO supported BiOI photocatalyst confirmed the effective suppression of electron-hole pair recombination. The optimized rGO (4 wt%) loaded BiOI photocatalyst significantly improved the photocatalytic activity (∼85%) towards the degradation of methyl orange (MO) dye compared to that of pristine BiOI (∼29%). Thus, around three folds enhancement in the photocatalytic activity of BiOI-rGO (4 wt%) catalyst was mainly attributed to ultrafast separation of electron-hole pairs and rapid transportation of carriers by rGO support. The superior photocatalytic activity demonstrated by this newly synthesized BiOI-rGO photocatalyst makes it's a potential candidate for environmental remediation process.

  15. Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects

    Science.gov (United States)

    Nomoto, K.; Yang, T. C. J.; Ceguerra, A. V.; Zhang, T.; Lin, Z.; Breen, A.; Wu, L.; Puthen-Veettil, B.; Jia, X.; Conibeer, G.; Perez-Wurfl, I.; Ringer, S. P.

    2017-07-01

    Thin films consisting of silicon nanocrystals fabricated by high silicon content in silicon rich oxide show unique properties of decreasing resistivity and increasing light absorption while maintaining quantum confinement effects. With that said, the effect of the annealing temperature and doping element on the microscopic structure of silicon nanocrystals (Si NCs) and the film are still under research. In this study, individual intrinsic, boron-, and phosphorus-doped films are annealed at various temperatures, and their structural properties are analyzed via atom probe tomography together with glancing incidence x-ray diffraction, Raman spectroscopy (Raman), transmission electron microscopy (TEM), and energy filtered TEM. In addition, photoluminescence (PL) is performed and linked with their microstructural properties. The Si NC growth is confirmed at annealing temperatures of 1000 °C and 1100 °C. The microstructure of the Si NCs in the whole film is dramatically changed by increasing the annealing temperature from 1000 °C to 1100 °C. In addition, doping changes the arrangement of the Si NCs by assisting their penetration across the SiO2 barrier layers. This study helps to understand the relationship between the microscopic and macroscopic properties of the Si NC film, showing that the size and distribution of the Si NCs are correlated with the obtained PL profiles.

  16. High-pressure deuterium annealing for improving the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices

    Science.gov (United States)

    Choi, Sangmoo; Jang, Man; Park, Hokyung; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2004-12-01

    We report the effects of high-pressure deuterium postmetallization annealing on the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices. Compared with the control samples annealed in a conventional forming gas ambient (H2/N2=4%/96%), the samples annealed in a high-pressure (10 atm) pure deuterium ambient show improved endurance and retention characteristics without the degradation of program/erase (P/E) speed. In addition, the high-pressure deuterium-annealed samples show a significantly reduced charge loss rate for the electron-stored state and the hole-stored state, before and after the P/E cycles. The improved reliability of the high-pressure deuterium-annealed samples can be explained by the significantly decreased interface trap density and the large kinetic isotope effect of deuterium, which reduces the generation of the interface trap density under the stress of the P/E cycles.

  17. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  18. Bipolar resistive switching and charge transport in silicon oxide memristor

    Energy Technology Data Exchange (ETDEWEB)

    Mikhaylov, Alexey N., E-mail: mian@nifti.unn.ru [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Belov, Alexey I.; Guseinov, Davud V.; Korolev, Dmitry S.; Antonov, Ivan N.; Efimovykh, Denis V.; Tikhov, Stanislav V.; Kasatkin, Alexander P.; Gorshkov, Oleg N.; Tetelbaum, David I.; Bobrov, Alexander I.; Malekhonova, Natalia V.; Pavlov, Dmitry A. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Gryaznov, Evgeny G. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation); Yatmanov, Alexander P. [Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation)

    2015-04-15

    Graphical abstract: - Highlights: • Si-based thin-film memristor structure was fabricated by magnetron sputtering. • We study bipolar resistive switching and charge transport mechanisms. • Resistive switching parameters are determined by a balance between redox reactions. - Abstract: Reproducible bipolar resistive switching has been studied in SiO{sub x}-based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO{sub 2}/Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics.

  19. Thermal processing and native oxidation of silicon nanoparticles

    International Nuclear Information System (INIS)

    Winters, Brandon J.; Holm, Jason; Roberts, Jeffrey T.

    2011-01-01

    In this study, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS) were used to investigate in-air oxidation of silicon nanoparticles ca. 11 nm in diameter. Particle samples were prepared first by extracting them from an RF plasma synthesis reactor, and then heating them in an inert carrier gas stream. The resulting particles had varying surface hydrogen coverages and relative amounts of SiH x (x = 1, 2, and 3), depending on the temperature to which they had been heated. The particles were allowed to oxidize in-air for several weeks. FTIR, XPS, and EELS analyses that were performed during this period clearly establish that adsorbed hydrogen retards oxidation, although in complex ways. In particular, particles that have been heated to intermediate hydrogen coverages oxidize more slowly in air than do freshly generated particles that have a much higher hydrogen content. In addition, the loss of surface hydride species at high processing temperatures results in fast initial oxidation and the formation of a self-limiting oxide layer. Analogous measurements made on deuterium-covered particles show broadly similar behavior; i.e., that oxidation is the slowest at some intermediate coverage of adsorbed deuterium.

  20. Self-cleaning glass coating containing titanium oxide and silicon

    International Nuclear Information System (INIS)

    Araujo, A.O. de; Alves, A.K.; Berutti, F.A.; Bergmann, C.P.

    2009-01-01

    Using the electro spinning technique nano fibers of titanium oxide doped with silicon were synthesized. As precursor materials, titanium propoxide, silicon tetra propoxide and a solution of polyvinylpyrrolidone were used. The non-tissue material obtained was characterized by X-ray diffraction to determine the phase and crystallite size, BET method to determine the surface and SEM to analyze the microstructure of the fibers. After ultrasound dispersion of this material in ethanol, the glass coatings were made by dip-coating methodology. The influence of the removal velocity, the solution composition and the glass surface preparation were evaluated. The film was characterized by the contact angle of a water droplet in its surface. (author)

  1. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  2. Bismuth, Metronidazole, and Tetracycline

    Science.gov (United States)

    Helidac® (as a kit containing Bismuth Subsalicylate, Metronidazole, Tetracycline) ... Bismuth, metronidazole, and tetracycline is used along with other ulcer medications to treat duodenal ulcers. It is ...

  3. Preparation of a Microspherical Silver-Reduced Graphene Oxide-Bismuth Vanadate Composite and Evaluation of Its Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Mao Du

    2016-03-01

    Full Text Available A novel Ag-reduced graphene oxide (rGO-bismuth vanadate (BiVO4 (AgGB ternary composite was successfully synthesized via a one-step method. The prepared composite was characterized by X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM, energy dispersive X-ray (EDX, Brunauer-Emmett-Teller (BET surface area measurement, Raman scattering spectroscopy, and ultraviolet-visible diffuse-reflection spectroscopy (UV-vis DRS. The results showed that bulk monoclinic needle-like BiVO4 and Ag nanoparticles with a diameter of approximately 40 nm formed microspheres (diameter, 5–8 μm with a uniform size distribution that could be loaded on rGO sheets to facilitate the transport of electrons photogenerated in BiVO4, thereby reducing the rate of recombination of photogenerated charge carriers in the coupled AgGB composite system. Ag nanoparticles were dispersed on the surface of the rGO sheets, which exhibited a localized surface plasmon resonance phenomenon and enhanced visible light absorption. The removal efficiency of rhodamine B dye by AgGB (80.2% was much higher than that of pure BiVO4 (51.6% and rGO-BiVO4 (58.3% under visible light irradiation. Recycle experiments showed that the AgGB composite still presented significant photocatalytic activity after five successive cycles. Finally, we propose a possible pathway and mechanism for the photocatalytic degradation of rhodamine B dye using the composite photocatalyst under visible light irradiation.

  4. Synthesis of bismuth sulfide/reduced graphene oxide composites and their electrochemical properties for lithium ion batteries

    International Nuclear Information System (INIS)

    Zhang, Zhian; Zhou, Chengkun; Huang, Lei; Wang, Xiwen; Qu, Yaohui; Lai, Yanqing; Li, Jie

    2013-01-01

    Graphical abstract: The Bi 2 S 3 /reduced graphene oxide composites were synthesized by a one-pot hydrothermal route and exhibited an extraordinary capacity of 1073.1 mAh g −1 with excellent cycling stability and high rate capability as anode material of lithium ion battery. The enhancement in the electrochemical performance could be attributed to the introduction of RGO sheets that not only buffer the large volume changes during the alloy/dealloy reaction of Li and Bi, but also provide a highly conductive network for rapid electron transport in electrode during electrochemical reaction. -- Highlights: •Bi 2 S 3 /RGO composites were in situ prepared by one-pot hydrothermal route. •The Bi 2 S 3 nanoparticles are homogeneous dispersion on the RGO sheets. •Bi 2 S 3 /RGO exhibits excellent cycling stability and high rate capability. •This work will also of interest for supercapacitor and solar cells. -- Abstract: A simple one-pot hydrothermal route was developed to synthesize bismuth sulfide/reduced graphene oxide composites (Bi 2 S 3 /RGO composites) in this work. The morphology and crystalline structure of the obtained products were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high resolution transmission electron microscopy (HRTEM). The results of Raman spectra and Fourier transform infrared (FTIR) spectra demonstrated that graphite oxide (GO) sheets were in situ reduced to a certain extent. Transmission electron microscopy (TEM) observation indicated that the Bi 2 S 3 nanoparticles, with a size of 80–100 nm in length, are anchored on RGO sheets. Electrochemical tests show the Bi 2 S 3 /RGO composite exhibits an extraordinary capacity of 1073.1 mAh g −1 with excellent cycling stability and high rate capability compared to pure Bi 2 S 3 particles prepared by a similar route in the absence of GO. The enhancement in the electrochemical performance could be attributed to the introduction of RGO sheets

  5. Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Godinho, V., E-mail: godinho@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Universite Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Bruxelles (Belgium); Denisov, V.N.; Mavrin, B.N.; Novikova, N.N.; Vinogradov, E.A.; Yakovlev, V.A. [Institute for Spectroscopy - Russian Academy of Sciences, 142190, Troitsk, Moscow reg. (Russian Federation); Fernandez-Ramos, C. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Institute for Prospective and Technological Studies-JRC European Commission, C/Inca Garcilaso s/n, 41092 Seville (Spain); Jimenez de Haro, M.C.; Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain)

    2009-10-15

    Vibrational (infrared and Raman) spectroscopy has been used to characterize SiO{sub x}N{sub y} and SiO{sub x} films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiO{sub x}N{sub y} films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content.

  6. Investigation of phase stability and oxide ion performance in new perovskite-type bismuth vanadate

    International Nuclear Information System (INIS)

    Al-Alas, Ahlam; Beg, Saba; Al-Areqi, Niyazi A.S.

    2012-01-01

    Samples of the BICDVOX system, formulated as Bi 4 Cd x V 2−x O 11−(3x/2)−δ in the Cd substitution range 0 ≤ x ≤ 0.25 were synthesized using the standard solid state reaction.The correlation between phase stability and oxide ion performance were investigated by variable temperature XRPD, DSC and AC impedance spectroscopy. The substitution of V 5+ by Cd 2+ exhibited different phase transitions upon varying composition. For compositions with x ≤ 0.05, two successive transitions; α↔β↔γ are evident, while the β↔γ transition exists in the composition range 0.05 4+ → V 5+ re–oxidation results in increased defect trapping effects in the system at higher temperatures. -- Highlights: ► γ-Stabilized BICDVOX at lower dopant concentrations. ► Good oxide-ion conductivity at lower temperatures. ► High temperature-vanadium reduction with lower dopant concentrations.

  7. New perspectives on thermal and hyperthermal oxidation of silicon surfaces

    Science.gov (United States)

    Khalilov, Umedjon

    The growth of (ultra)thin silica (SiO2) layers on crystalline silicon (c-Si) and controlling the thickness of SiO2 is an important issue in the fabrication of microelectronics and photovoltaic devices (e.g., MOSFETs, solar cells, optical fibers etc.). Such ultrathin oxide can be grown and tuned even at low temperature (including room temperature), by hyperthermal oxidation or when performed on non-planar Si surfaces (e.g., Si nanowires or spheres). However, hyperthermal silica growth as well as small Si-NW oxidation in general and the initial stages in particular have not yet been investigated in full detail. This work is therefore devoted to controlling ultrathin silica thickness on planar and non-planar Si surfaces, which can open new perspectives in nanodevice fabrication. The simulation of hyperthermal (1-100 eV) Si oxidation demonstrate that at low impact energy (transistors and photovoltaic devices in near-future nanotechnology. Above the transition temperature such core-shell nanowires are completely converted to a-SiO2 nanowires. It can be concluded that an accurate control over the interfacial stress by choosing a suitable oxidation temperature and Si-NW diameter can lead to precise nanoscale control over the Si-core radius. All investigations were carried out by applying molecular dynamics calculations using the ReaxFF potential, allowing a accurately study of the underpinning physical and chemical processes.

  8. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  9. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  10. Optical properties of bismuth-doped silica fibres in the temperature range 300 — 1500 K

    International Nuclear Information System (INIS)

    Dvoretskii, D A; Bufetov, Igor' A; Vel'miskin, V V; Zlenko, Alexander S; Khopin, V F; Semjonov, S L; Guryanov, Aleksei N; Denisov, L K; Dianov, Evgenii M

    2012-01-01

    The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi 3+ profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)

  11. Microcontact Printing onto Oxide-Free Silicon via Highly Reactive Acid Fluoride-Functionalized Monolayers

    NARCIS (Netherlands)

    Scheres, L.M.W.; Maat, ter J.; Giesbers, M.; Zuilhof, H.

    2010-01-01

    This work describes a new route for patterning organic monolayers on oxide-free silicon by microcontact printing (µCP) on a preformed, reactive, acid-fluoride-terminated monolayer. This indirect printing approach is fast and easily preserves the oxide-free and well-defined monolayer-silicon

  12. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

  13. Tandem Brook Rearrangement/Silicon Polonovski Reaction via Oxidative Generation of Ammonium Ylides.

    Science.gov (United States)

    Shibuya, Hiromasa; Nakago, Takahiro; Inoue, Seiichi; Hoshino, Yujiro; Honda, Kiyoshi

    2017-08-01

    A tandem Brook rearrangement/silicon Polonovski reaction has been achieved by in situ generation of ammonium ylides via the oxidation of α-silyl-tertiary amines. Furthermore, we found that the oxidation of N-(1-cyano-1-silyl)methyl-tertiary amines with peracids induced the tandem Brook rearrangement/silicon Polonovski reaction/fragmentation to give formamide derivatives in moderate yields.

  14. Direct chemical vapour deposited grapheme synthesis on silicon oxide by controlled copper dewettting

    NARCIS (Netherlands)

    van den Beld, Wesley Theodorus Eduardus; van den Berg, Albert; Eijkel, Jan C.T.

    2015-01-01

    In this paper we present a novel method for direct uniform graphene synthesis onto silicon oxide in a controlled manner. On a grooved silicon oxide wafer is copper deposited under a slight angle and subsequently the substrate is treated by a typical graphene synthesis process. During this process

  15. Monte Carlo simulations of radioactive waste encapsulated by bisphenol-A polycarbonate and effect of bismuth-III oxide filler material

    Science.gov (United States)

    Özdemir, Tonguç

    2017-06-01

    Radioactive waste generated from the nuclear industry and non-power applications should carefully be treated, conditioned and disposed according to the regulations set by the competent authority(ies). Bisphenol-a polycarbonate (BPA-PC), a very widely used polymer, might be considered as a potential candidate material for low level radioactive waste encapsulation. In this work, the dose rate distribution in the radioactive waste drum (containing radioactive waste and the BPA-PC polymer matrix) was determined using Monte Carlo simulations. Moreover, the change of mechanical properties of BPA-PC was estimated and their variation within the waste drum was determined for the periods of 15, 30 and 300 years after disposal to the final disposal site. The change of the dose rate within the waste drum with different contents of bismuth-III oxide were also simulated. It was concluded that addition of bismuth-III oxide filler decreases the dose delivered to the polymeric matrix due to photoelectric effect.

  16. Evaluation of a carbon paste electrode modified with Strontium substituted bismuth and titanium oxide nanoparticles in the toxic metal chromium (VI determination potentiometric method

    Directory of Open Access Journals (Sweden)

    Atefeh Badri

    2016-09-01

    Full Text Available Strontium substituted bismuth and titanium oxide nanoparticles with aurivillius morphology synthesized by chemical co-precipitation method and were characterized using XRD. The nanopartcles were used in the composition of the carbon paste to improve conductivity and transduction of chemical signal to electrical signal. A procedure for the determination of chromium is described based on pre-concentration of the dichromate anion at a carbon paste electrode modified. A novel potentiometric Cr6+carbon paste electrode incorporating Strontium substituted bismuth and titanium oxide nanoparticles (SSBTO. Ina acetate buffer solution of pH 5, the sensor displays a rapid and linear response for Cr6+ over the concentration range 1.0×10-5 to 1.0×10-1mol L-1 M with an anionic slope of 54.8± 0.2 mV decade ’ and a detection limit of the order of0.002 /µg ml ‘. The sensor is used for determination of Cr6+ by direct monitoring of Cr6+.The average recoveries of Cr6+at concentration levels of 0.5~40 pg/ml ’is 98.3. The electrode has a short response time (<6s and can be used for at least twenty days without any considerable divergence in potentials and the working pH range was 4.5-6.5. The proposed electrode was successfully used as an indicator for potentiometric determination of Cr6+in water sample.

  17. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution

    Science.gov (United States)

    Kim, Tae Hun; Sim, Jae Sung; Lee, Jong Duk; Shin, Hyung Cheol; Park, Byung-Gook

    2004-07-01

    We investigated the charge decay characteristics of a silicon-oxide-nitride-oxide-silicon type nonvolatile memory at elevated temperatures. Based on the amphoteric trap model and the thermal emission model of the trapped charge, we propose an advanced charge decay model which includes the effect of the bottom oxide, and apply it to extraction of the trap density distribution in energy levels of the nitride layer. The samples prepared have nitride films deposited simultaneously and are classified into two groups according to the thickness of the bottom oxide. The trap density distributions extracted from two groups showed good consistency.

  18. Surface and Core Electronic Structure of Oxidized Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Noor A. Nama

    2010-01-01

    Full Text Available Ab initio restricted Hartree-Fock method within the framework of large unit cell formalism is used to simulate silicon nanocrystals between 216 and 1000 atoms (1.6–2.65 nm in diameter that include Bravais and primitive cell multiples. The investigated properties include core and oxidized surface properties. Results revealed that electronic properties converge to some limit as the size of the nanocrystal increases. Increasing the size of the core of a nanocrystal resulted in an increase of the energy gap, valence band width, and cohesive energy. The lattice constant of the core and oxidized surface parts shows a decreasing trend as the nanocrystal increases in a size that converges to 5.28 Ǻ in a good agreement with the experiment. Surface and core convergence to the same lattice constant reflects good adherence of oxide layer at the surface. The core density of states shows highly degenerate states that split at the oxygenated (001-(1×1 surface due to symmetry breaking. The nanocrystal surface shows smaller gap and higher valence and conduction bands when compared to the core part, due to oxygen surface atoms and reduced structural symmetry. The smaller surface energy gap shows that energy gap of the nanocrystal is controlled by the surface part. Unlike the core part, the surface part shows a descending energy gap that proves its obedience to quantum confinement effects. Nanocrystal geometry proved to have some influence on all electronic properties including the energy gap.

  19. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  20. Silicone-modified graphene oxide fillers via the Piers-Rubinsztajn reaction

    DEFF Research Database (Denmark)

    Zhang, Jianfeng; Liang, Shuai; Yu, Liyun

    2016-01-01

    While graphene or graphene oxide can make significantimprovements in the properties of a wide variety of polymericmaterials, their incorporation can be challenged byincompatibility with the polymeric matrix. The modification ofgraphene oxide with silicones or silanes using the Piers......-Rubinsztajn reaction improves dispersibility in nonpolar materials,including organic solvents and silicone pre-elastomers. Ahigh loading (up to 10 wt %) of modified graphene oxide insilicone elastomers could be achieved, which resulted inenhanced mechanical performance and reduced gas permeability....

  1. The crystal structure of baliczunicite, Bi2O(SO4)2, a new natural bismuth oxide sulfate

    DEFF Research Database (Denmark)

    Pinto, Daniela; Garavelli, Anna; Balic Zunic, Tonci

    2015-01-01

    = 14.1754(7)Å , α = 80.082(2)o, β = 88.462(2)º, γ = 89.517(2)º, V = 1052.01(8)Å3 and Z = 6. The crystal structure consists of six independent Bi sites, six S sites and 27 O sites of which three are oxo oxygen atoms not bonded to sulfur. Bismuth and S atoms are arranged close to a eutectic pattern....... The trapezoidal Bi5O39+ ions are joined along [100] with SO42- groups by means of strong bismuth-sulphate oxygen bonds, forming infinite [100] rods with composition Bi5O3(SO4)5-. One sixth of the Bi atoms do not participate in trapezoids, but form, with additional SO42- groups, rows of composition BiSO4+, also...

  2. One-step synthesis of bismuth molybdate catalysts via flame spray pyrolysis for the selective oxidation of propylene to acrolein

    DEFF Research Database (Denmark)

    Schuh, K.; Kleist, W.; Høj, Martin

    2014-01-01

    Flame spray pyrolysis (FSP) of Bi(III)-and Mo(VI)-2-ethylhexanoate dissolved in xylene resulted in various nanocrystalline bismuth molybdate phases depending on the Bi/Mo ratio. Besides alpha-Bi2Mo3O12 and gamma-Bi2MoO6, FSP gave direct access to the metastable beta-Bi2Mo2O9 phase with high surfa...... to acrolein at temperatures relevant for industrial applications (360 degrees C)....

  3. Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Birkelund, Karen; Grey, Francois

    1996-01-01

    A focused laser beam has been used to induce oxidation of hydrogen-passivated silicon. The scanning laser beam removes the hydrogen passivation locally from the silicon surface, which immediately oxidizes in air. The process has been studied as a function of power density and excitation wavelength...... be generated by laser direct oxidation and complemented with nanometer resolution by scanning probe techniques. The combined micro- and nanoscale pattern can be transferred to the silicon in a single etching step by either wet or dry etching techniques. (C) 1996 American Institute of Physics....

  4. Synthesis of silicon oxide microropes on the copper substrate with SiO2 interlayer

    Science.gov (United States)

    Baranov, E.; Khmel, S.; Zamchiy, A.; Shatskiy, E.

    2017-11-01

    Nanostructuring of the surface is a promising technology for the processes of boiling. In this paper, we synthesized array of “microropes” from silicon oxide nanowires on the copper substrate with a silicon oxide intermediate layer by gas-jet electron beam plasma CVD method. The morphology for the synthesis time of 2 minutes 30 seconds and 5 minutes was obtained. The water droplet on the silicon oxide nanowires shows the measured contact angles 14° and 10° for deposition times of 5 min and 2 min 30 sec, respectively.

  5. Effect of solvents on optical band gap of silicon-doped graphene oxide

    Science.gov (United States)

    Tul Ain, Qura; Al-Modlej, Abeer; Alshammari, Abeer; Naeem Anjum, Muhammad

    2018-03-01

    The objective of this study was to determine the influence on the optical band gap when the same amount of silicon-doped graphene oxide was dissolved in three different solvents namely, distilled water, benzene, and dichloroethane. Ultraviolet-visible spectroscopy was used to analyse the optical properties of the solutions. Among all these solutions distilled water containing silicon-doped graphene oxide has the smallest optical band gap of 2.9 eV and is considered a semiconductor. Other solutions are not considered as semiconductors as they have optical band gaps greater than 4 eV. It was observed that there is an increase in the value of optical band gap of distilled water, benzene, and dichloroethane solutions indicating a rise in the insulating behaviour. In this experiment, graphene oxide was synthesised from graphite powder by modified Hummer’s method and was then doped with silicon. Synthesis and doping of graphene oxide were confirmed by various characterization techniques. Fourier transmission infrared spectroscopy was used for identification of surface functional groups. X-ray diffraction was carried out to confirm the formation of crystalline graphene oxide and silicon doped graphene oxide. In x-ray diffraction pattern, shifting of intensity peak from a 2θ value of 26.5° to 10° confirmed the synthesis of graphene oxide and various intensity peaks at different values of 2θ confirmed doping of graphene oxide with silicon. Scanning electron microscopy images indicated that graphene oxide sheets were decorated with spherical silicon nanoparticles. Energy dispersive x-ray spectroscopy showed that silicon doped graphene oxide powder contained 63.36% carbon, 34.05% oxygen, and 2.6% silicon.

  6. Melanin-gamma rays assistants for bismuth oxide nanoparticles synthesis at room temperature for enhancing antimicrobial, and photocatalytic activity.

    Science.gov (United States)

    El-Batal, Ahmed I; El-Sayyad, Gharieb S; El-Ghamry, Abbas; Agaypi, Kerolos M; Elsayed, Mohamed A; Gobara, Mohamed

    2017-08-01

    Melanin pigment has been deemed as a natural photoprotector with strong hydrophobicity. It allured considerable compatibility with many applications in medicine, food, and nanotechnology. Penicillium chrysogenium has been devoted to the green synthesis of melanin whereby optimizing its culture and environmental conditions. The impacts of alternative economic L-tyrosine natural sources (unprecedented alternate origins) and gamma radiation were pledged for the potential growing of the pigment. Herein, notable increases in melanin yield (6.4mg/ml; much higher than nonoptimized one by 40 folds) was obtained by optimizing the culture, and environmental requirements [potato starch (3.0%), yeast extract (5.0%), copper sulfate (0.2mM), 0.25% L-tyrosine, 0.1% L-glycine, and 0.1% Tween 20 at pH5.0, and 30°C for 7.0days using 180.0rpm shaking speed]. The addition of banana's peel (2.0%) has been led to increase the melanin production up to (8.3mg/ml; much higher than optimized one by 1.29 folds). It stimulated the induced enzymes, (i.e., tyrosinase) because it contained significant amounts of L-tyrosine, dopamine, and L-DOPA as resources for melanin biosynthesis. Then irradiated P. chrysogenium (2.5kGy) induced the pigment yield to 10.3mg/ml; much higher than optimized one by (1.61 folds). On the other hand, we tailored a methodology involved the product of melanin and gamma rays (25.0kGy) to an eco-friendly synthesis of Bismuth oxide nanoparticles (BiONPs) at the room temperature. Melanin under such alkaline condition functioning as simultaneously hydrolyzes, photoprotection of the Bi seeds, and stabilizer against the uncontrolled growth and the free radicals attack. Whereas the gamma irradiation induced the room temperature condensation reaction to occur, a novel mechanism proposal was discussed. BiONPs were characterized by UV-Vis., DLS, XRD, SEM, EDX, and FTIR. DLS and XRD calculations with TEM analysis exhibited the mean diameter of BiONPs was 29.82nm. Moreover, the as

  7. Formation of bismuth oxide nanowires by simultaneous templating and electrochemical adhesion of DNA on Si/SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hale, Michael G. [School of Chemistry, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Little, Ross; Salem, Mohamed Ali [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Hedley, Joseph H.; Horrocks, Benjamin R. [School of Chemistry, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Siller, Lidija, E-mail: Lidija.Siller@ncl.ac.uk [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

    2012-10-01

    Deoxyribonucleic acid (DNA)-templated growth of Bi/Bi{sub 2}O{sub 3} nanowires attached to the Si surface was obtained by electrochemical reduction of Bi(III) at an n-type Si electrode in aqueous Bi(NO{sub 3}){sub 3}/HNO{sub 3} at pH 2.5 with calf thymus DNA. The nanowires had a mean diameter of 5 nm and a range of lengths from 1.4 {mu}m to 6.1 {mu}m. The composition and structure of the wires were determined by atomic force microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray photoemission spectroscopy. The dominant component of the material is Bi{sub 2}O{sub 3} owing to the rapid re-oxidation of nanoscale Bi in the presence of air and water. Our method has the potential to construct complex architectures of Bi/Bi{sub 2}O{sub 3} nanostrucures on high quality Si substrates. - Highlights: Black-Right-Pointing-Pointer We have developed an electrochemical method to grow Bi/Bi{sub 2}O{sub 3} nanowires on silicon. Black-Right-Pointing-Pointer Bi/Bi{sub 2}O{sub 3} nanowires are templated by deoxyribonucleic acid molecules. Black-Right-Pointing-Pointer The procedure also adheres the nanowires to the electrode for characterization.

  8. New transport phenomena probed by dielectric spectroscopy of oxidized and non-oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Urbach, B.; Axelrod, E.; Sa' ar, A. [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2007-05-15

    Dielectric spectroscopy accompanied by infrared (IR) and photoluminescence (PL) spectroscopy have been utilized to reveal the correlation between transport, optical and structural properties of oxidized porous silicon (PS). Three relaxation processes at low-, mid- and high-temperatures were observed, including dc-conductivity at high-temperatures. Both the low-T relaxation and the dc conductivity were found to be thermally activated processes that involve tunneling and hopping in between the nanocrystals in oxidized PS. We have found that the dc-conductivity is limited by geometrical constrictions along the transport channels, which are not effected by the oxidation process and are characterized by activation energies of about {proportional_to}0.85 eV. The low-T relaxation process involves thermal activation followed by tunneling in between neighbor nanocrystals, with somewhat lower activation energies. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Optical and electrical properties of thin films of bismuth ferric oxide; Propiedades opticas y electricas de peliculas delgadas de oxido de bismuto ferrico

    Energy Technology Data Exchange (ETDEWEB)

    Cardona R, D.

    2014-07-01

    The bismuth ferric oxide (BFO) has caused great attention in recent years because of their multi ferric properties, making it very attractive for different technological applications. In this paper simultaneous ablation of two white (Bi and Fe{sub 2}O{sub 3}) was used in a reactive atmosphere (containing oxygen) to deposit thin films of BFO. The composition of the films is changed by controlling the plasma parameters such as the average kinetic energy of the ions (E p) and the plasma density (Np). The effects caused by excess of Bi and Fe in atomic structure and the optical and electrical properties of the films BiFeO{sub 3} in terms of plasma parameters were studied. The X-ray diffraction patterns of BFO samples with excess of bismuth above 2% at. They exhibited small changes in structure leading to improved levels of leakage currents compared to levels of the film with a stoichiometry close to BiFeO{sub 3} composition. These samples showed a secondary phase (Bi{sub 2}5FeO{sub 4}0 selenite type) that led to the increase in the values of band gap and resistivity as well as the improvement of the piezoelectric properties. On the other hand, the films with iron excess showed as secondary phase compounds of iron oxide (α - γ-Fe{sub 2}O{sub 3}) that caused increments in the conductivity and decrease in the values of band gap. The results are discussed in terms of the excesses of Bi and Fe which were correlated with the plasma parameters. (Author)

  10. Large area nanoscale patterning of silicon surfaces by parallel local oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Losilla, N S; Martinez, J; Garcia, R [Instituto de Microelectronica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)

    2009-11-25

    The homogeneity and the reproducibility of parallel local oxidation have been improved by introducing a thin film of polymethylmethacrylate (PMMA) between the stamp and the silicon surface. The flexibility of the polymer film enables a homogeneous contact of the stamp with the silicon surface to be achieved. The oxides obtained yield better aspect ratios compared with the ones created with no PMMA layer. The pattern is formed when a bias voltage is applied between the stamp and the silicon surface for 1 min. The patterning can be done by a step and repeat technique and is reproducible across a centimetre length scale. Once the oxide nanostructures have been created, the polymer is removed by etching in acetone. Finally, parallel local oxidation is applied to fabricate silicon nanostructures and templates for the growth of organic molecules.

  11. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  12. Nitric oxide levels in the anterior chamber of vitrectomized eyes with silicon oil

    Directory of Open Access Journals (Sweden)

    Paulo Escarião

    2013-10-01

    Full Text Available PURPOSE: To investigate the nitric oxide levels in the anterior chamber of eyes who underwent pars plana vitrectomy (PPV with silicone oil. METHODS: Patients who underwent PPV with silicon oil injection, from february 2005 to august 2007, were selected. Nine patients (nine eyes participated in the study (five women and four men. Nitric oxide concentration was quantified after the aspiration of aqueous humor samples during the procedure of silicon oil removal. Data such as: oil emulsification; presence of oil in the anterior chamber; intraocular pressure and time with silicone oil were evaluated. Values of p <0.05 were considered to be statistically significant. RESULTS: A positive correlation between nitric oxide concentration and time with silicon oil in the vitreous cavity (r=0.799 was observed. The nitric oxide concentration was significantly higher (p=0.02 in patients with silicon oil more than 24 months (0.90µmol/ml ± 0.59, n=3 in the vitreous cavity comparing to patients with less than 24 months (0.19µmol/ml ± 0.10, n=6. CONCLUSION: A positive correlation linking silicone oil time in the vitreous cavity with the nitric oxide concentration in the anterior chamber was observed.

  13. Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells

    Science.gov (United States)

    Liu, Qiming; Wanatabe, Fumiya; Hoshino, Aya; Ishikawa, Ryo; Gotou, Takuya; Ueno, Keiji; Shirai, Hajime

    2012-10-01

    Soluble graphene oxide (GO) and plasma-reduced (pr-) GO were investigated using crystalline silicon (c-Si) (100)/GO/pr-GO hybrid junction solar cells. Their photovoltaic performances were compared with those of c-Si/GO/pristine conductive poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) heterojunction and c-Si/PEDOT:PSS:GO composite devices. The c-Si/GO/pr-GO and conductive PEDOT:PSS/Al heterojunction solar cells showed power conversion efficiencies of 6.5 and 8.2%, respectively, under illumination with AM 1.5 G 100 mW/cm2 simulated solar light. A higher performance of 10.7% was achieved using the PEDOT:PSS:GO (12.5 wt %) composite device. These findings imply that soluble GO, pr-GO, and the PEDOT:PSS:GO composite are promising materials as hole transport and transparent conductive layers for c-Si/organic hybrid junction solar cells.

  14. Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation

    OpenAIRE

    Teo, EJ; Bettiol, AA; Yang, P; Breese, MBH; Xiong, BQ; Mashanovich, GZ; Headley, WR; Reed, GT

    2009-01-01

    we have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1 x 10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1 +/- 0.4 dB/cm and 1.2 +/- 0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowe...

  15. Effect of weak metallic contamination on silicon epitaxial layer and gate oxide integrity

    Energy Technology Data Exchange (ETDEWEB)

    Mello, D.; Coccorese, C.; Ferlito, E.; Sciuto, G.; Ricciari, R.; Barbarino, P.; Astuto, M. [STMicroelectronics, Physics Lab. Stradale primosole, 50 I-95121 Catania (Italy)

    2011-08-15

    The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy-band gap. The presence of trace of metals on the silicon surface can also degrade the gate oxide integrity, cause structural defect in silicon epitaxial layers or anomalies in silicon/gate oxide interface. Usually in semiconductor manufacturing superficial metallic contamination is monitored using Total X-ray Reflection Fluorescence spectroscopy (TXRF) and performing specific electrical measurements on dedicated capacitor. In this work a weak contamination, undetected by TXRF analysis, was revealed by Transmission Electron Microscopy (TEM) observing lattice damaging and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) detecting an anomalous Na distribution in depth profile. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

    CERN Document Server

    Askinazi, A Y; Miloglyadova, L V

    2002-01-01

    One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

  17. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  18. Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation.

    Science.gov (United States)

    Teo, E J; Bettiol, A A; Yang, P; Breese, M B H; Xiong, B Q; Mashanovich, G Z; Headley, W R; Reed, G T

    2009-03-01

    We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1x10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1+/-0.4 dB/cm and 1.2+/-0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.

  19. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    Energy Technology Data Exchange (ETDEWEB)

    Huo, Yuchen [Department of Materials Science and Engineering, University of Florida, Rhines Hall 100, Gainesville, FL 32611 (United States); Ketelson, Howard [Alcon Inc., Research and Development, Vision Care, 6201 South Freeway, Fort Worth, TX 76134 (United States); Perry, Scott S., E-mail: ssp@mse.ufl.edu [Department of Materials Science and Engineering, University of Florida, Rhines Hall 100, Gainesville, FL 32611 (United States)

    2013-05-15

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO–BO). The extent of lens surface modification by EO–BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision{sup ®} (balafilcon A) and O{sub 2}OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE{sup ®} Oasys{sup ®} (senofilcon A) and Biofinity{sup ®} (comfilcon A) was limited. As for bulk absorption, the amount of EO–BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO–BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  20. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    Science.gov (United States)

    Huo, Yuchen; Ketelson, Howard; Perry, Scott S.

    2013-05-01

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO-BO). The extent of lens surface modification by EO-BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision® (balafilcon A) and O2OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE® Oasys® (senofilcon A) and Biofinity® (comfilcon A) was limited. As for bulk absorption, the amount of EO-BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO-BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  1. Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2 or Si3N4 buffer layer

    Science.gov (United States)

    Lee, Sang-Youl; Oh, Jae-Sub; Yang, Seung-Dong; Yun, Ho-Jin; Jeong, Kwang-Seok; Kim, Yu-Mi; Lee, Hi-Deok; Lee, Ga-Won

    2013-10-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage ( V T ), subthreshold slope ( SS) and transconductance ( g m ), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and g m , program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.

  2. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  3. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  4. Selective surface modification of lithographic silicon oxide nanostructures by organofunctional silanes

    Directory of Open Access Journals (Sweden)

    Thomas Baumgärtel

    2013-03-01

    Full Text Available This study investigates the controlled chemical functionalization of silicon oxide nanostructures prepared by AFM-anodization lithography of alkyl-terminated silicon. Different conditions for the growth of covalently bound mono-, multi- or submonolayers of distinctively functional silane molecules on nanostructures have been identified by AFM-height investigations. Routes for the preparation of methyl- or amino-terminated structures or silicon surfaces are presented and discussed. The formation of silane monolayers on nanoscopic silicon oxide nanostructures was found to be much more sensitive towards ambient humidity than, e.g., the silanization of larger OH-terminated silica surfaces. Amino-functionalized nanostructures have been successfully modified by the covalent binding of functional fluorescein dye molecules. Upon excitation, the dye-functionalized structures show only weak fluorescence, which may be an indication of a relatively low surface coverage of the dye molecules on length scale that is not accessible by standard AFM measurements.

  5. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  6. Surface-Assisted Laser Desorption Ionization of Low Molecular Organic Substances on Oxidized Porous Silicon

    Science.gov (United States)

    Shmigol, I. V.; Alekseev, S. A.; Lavrynenko, O. Yu.; Zaitsev, V. N.; Barbier, D.; Pokrovskiy, V. A.

    Desorption/ionization on silicon (DIOS) mass spectra of methylene blue (MB+Cl-) were studied using p+-type oxidized monofunctional porous silicon (PS-OX mono ) free layers. Reduction/protonation processes of methylene blue (MB) dye were investigated. It was shown that SiH x terminal sites on oxidized surface of porous silicon (PS-OX) are not the rate-determining factor for the reduction/protonation in DIOS. Tunneling of electron through the dielectric layer of nanostructures on silicon surface under effect of local electrostatic and electromagnetic fields is considered to be the most significant factor of adsorbate-adsorbent electron exchange and further laser-induced ion formation.

  7. Covalent Surface Modification of Silicon Oxides with Alcohols in Polar Aprotic Solvents.

    Science.gov (United States)

    Lee, Austin W H; Gates, Byron D

    2017-09-05

    Alcohol-based monolayers were successfully formed on the surfaces of silicon oxides through reactions performed in polar aprotic solvents. Monolayers prepared from alcohol-based reagents have been previously introduced as an alternative approach to covalently modify the surfaces of silicon oxides. These reagents are readily available, widely distributed, and are minimally susceptible to side reactions with ambient moisture. A limitation of using alcohol-based compounds is that previous reactions required relatively high temperatures in neat solutions, which can degrade some alcohol compounds or could lead to other unwanted side reactions during the formation of the monolayers. To overcome these challenges, we investigate the condensation reaction of alcohols on silicon oxides carried out in polar aprotic solvents. In particular, propylene carbonate has been identified as a polar aprotic solvent that is relatively nontoxic, readily accessible, and can facilitate the formation of alcohol-based monolayers. We have successfully demonstrated this approach for tuning the surface chemistry of silicon oxide surfaces with a variety of alcohol containing compounds. The strategy introduced in this research can be utilized to create silicon oxide surfaces with hydrophobic, oleophobic, or charged functionalities.

  8. Sponge-like reduced graphene oxide/silicon/carbon nanotube composites for lithium ion batteries

    Science.gov (United States)

    Fang, Menglu; Wang, Zhao; Chen, Xiaojun; Guan, Shiyou

    2018-04-01

    Three-dimensional sponge-like reduced graphene oxide/silicon/carbon nanotube composites were synthesized by one-step hydrothermal self-assembly using silicon nanoparticles, graphene oxide and amino modified carbon nanotubes to develop high-performance anode materials of lithium ion batteries. Scanning electron microscopy and transmission electron microscopy images show the structure of composites that Silicon nanoparticles are coated with reduced graphene oxide while amino modified carbon nanotubes wrap around the reduced graphene oxide in the composites. When applied to lithium ion battery, these composites exhibit high initial specific capacity of 2552 mA h/g at a current density of 0.05 A/g. In addition, reduced graphene oxide/silicon/carbon nanotube composites also have better cycle stability than bare Silicon nanoparticles electrode with the specific capacity of 1215 mA h/g after 100 cycles. The three-dimension sponge-like structure not only ensures the electrical conductivity but also buffers the huge volume change, which has broad potential application in the field of battery.

  9. Quantification of silane molecules on oxidized silicon: are there options for a traceable and absolute determination?

    Science.gov (United States)

    Dietrich, P M; Streeck, C; Glamsch, S; Ehlert, C; Lippitz, A; Nutsch, A; Kulak, N; Beckhoff, B; Unger, W E S

    2015-10-06

    Organosilanes are used routinely to functionalize various support materials for further modifications. Nevertheless, reliable quantitative information about surface functional group densities after layer formation is rarely available. Here, we present the analysis of thin organic nanolayers made from nitrogen containing silane molecules on naturally oxidized silicon wafers with reference-free total reflection X-ray fluorescence (TXRF) and X-ray photoelectron spectroscopy (XPS). An areic density of 2-4 silane molecules per nm(2) was calculated from the layer's nitrogen mass deposition per area unit obtained by reference-free TXRF. Complementary energy and angle-resolved XPS (ER/AR-XPS) in the Si 2p core-level region was used to analyze the outermost surface region of the organic (silane layer)-inorganic (silicon wafer) interface. Different coexisting silicon species as silicon, native silicon oxide, and silane were identified and quantified. As a result of the presented proof-of-concept, absolute and traceable values for the areic density of silanes containing nitrogen as intrinsic marker are obtained by calibration of the XPS methods with reference-free TXRF. Furthermore, ER/AR-XPS is shown to facilitate the determination of areic densities in (mono)layers made from silanes having no heteroatomic marker other than silicon. After calibration with reference-free TXRF, these areic densities of silane molecules can be determined when using the XPS component intensity of the silane's silicon atom.

  10. Silicon oxide sacrificial layers deposited by pulsed-DC magnetron sputtering for MEMS applications

    Science.gov (United States)

    González-Castilla, Sheila; Olivares, Jimena; Clement, Marta; Vergara, Lucía; Pulido, Laura; Iborra, Enrique; Sangrador, Jesús

    2009-05-01

    Surface micromachining requires the use of easily-removable sacrificial layers fully compatible with all the materials and technological processes involved. Silicon dioxide films, thermally grown on silicon substrates or deposited by CVD, are commonly used as sacrificial layers in surface micromachining technologies, despite their low lateral etch rate in conventional fluorinate solutions. The development of silicon oxide layers with high etch rates poses a great technological challenge. In this work we have investigated the possibility of obtaining easily removable silicon oxide layers by pulsed-DC magnetron reactive sputtering. We have carried out a comprehensive study of the influence of the deposition parameters (total pressure and gas composition) on the composition, residual stress and lateral etch rate in fluorine wet solutions of the films. This study has allowed to determine the sputtering conditions to deposit, at very high rates (up to 0.1 μm/min), silicon oxide films with excellent characteristics for their use as sacrificial layers. Films with roughness around 5 nm rms, residual stress below 100 MPa and very high etch rate (up to 5 μm/min in the lateral directions), around 70 times greater than for thermal silicon oxide, have been achieved. The structural characteristics of these easily removable silicon oxide layers have been assessed by infrared spectroscopy and atomic force microscopy, which have revealed that the films exhibit some kind of porous structure, related to very specific sputter conditions. Finally, the viability of these films has been demonstrated by using them as sacrificial layer in the fabrication process of AlN-based microresonators.

  11. High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

    International Nuclear Information System (INIS)

    Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

    2007-01-01

    Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

  12. Modified Poisson solver for the simulation of the silicon-oxide interface in semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Castoldi, A. E-mail: andrea.castoldi@polimi.it; Rehak, P.; Gatti, E.; Guazzoni, C.; De Geronimo, G

    2000-01-11

    We present a modified Poisson solver for depleted semiconductor detectors that takes into account the effects of possible accumulation of mobile charge at the silicon-oxide interfaces. The solver is based on a physical model that closely approximates the correct boundary condition at the silicon-oxide interface. The model assumes that the silicon-oxide interface is divided into an equipotential region, where the electron layer is located, and a fully depleted region. The actual extension and potential of the electron layer region are approximated with the desired accuracy by an iterative procedure. This model has been implemented in 2- and 3-D Poisson solvers. The comparison with a 2-D drift-diffusion simulator has shown the accuracy of the proposed method. The modified Poisson solver has shown to be useful in giving accurate solutions to 3-D design problems at high CPU speed.

  13. Modified Poisson solver for the simulation of the silicon-oxide interface in semiconductor detectors

    CERN Document Server

    Castoldi, A; Gatti, E; Guazzoni, C; De Geronimo, G

    2000-01-01

    We present a modified Poisson solver for depleted semiconductor detectors that takes into account the effects of possible accumulation of mobile charge at the silicon-oxide interfaces. The solver is based on a physical model that closely approximates the correct boundary condition at the silicon-oxide interface. The model assumes that the silicon-oxide interface is divided into an equipotential region, where the electron layer is located, and a fully depleted region. The actual extension and potential of the electron layer region are approximated with the desired accuracy by an iterative procedure. This model has been implemented in 2- and 3-D Poisson solvers. The comparison with a 2-D drift-diffusion simulator has shown the accuracy of the proposed method. The modified Poisson solver has shown to be useful in giving accurate solutions to 3-D design problems at high CPU speed.

  14. Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

    Science.gov (United States)

    Strangmen, Thomas E.; Fox, Dennis S.

    1994-01-01

    Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

  15. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  16. Effects of simvastain and enamel matrix derivative on Portland cement with bismuth oxide-induced growth and odontoblastic differentiation in human dental pulp cells.

    Science.gov (United States)

    Lee, So-Youn; Min, Kyung-San; Choi, Gi-Woon; Park, Jae-Hong; Park, Sang-Hyuk; Lee, Sang-Im; Kim, Eun-Cheol

    2012-03-01

    We previously reported that bismuth oxide containing Portland cement (BPC) showed similar biocompatibility to Portland cement (PC) in periodontal ligament cells. However, the bioactivity of simvastatin and Emdogain (Biora AB, Malmö, Sweden) on BPC was not reported. The aim of this study was to evaluate the effects of simvastatin and Emdogain on BPC compared with mineral trioxide aggregate (MTA) in human dental pulp cells (HDPCs). Cell growth was determined by 3-(4,5-Dimethylthiazol-2-yl)-2,5-diphenyltetrazolium-bromide (MTT) assay. Differentiation was evaluated by alkaline phosphatase (ALP) activity, alizarin red staining, and reverse-transcriptase polymerase chain reaction. The cell growth of HDPCs exposed to Emdogain and simvastatin plus BPC was superior to those administered BPC alone and similar to those that received MTA for 14 days. The simvastatin and Emdogain groups increased the odontogenic potential of the BPC group with respect to ALP activity, mineralization nodules, messenger RNA expression of ALP, osteopontin, osteocalcin, Runx2, and osterix. These results suggest that simvastatin and Emdogain improved cell growth and the differentiation of the BPC group in HDPCs and may be useful ingredients in BPC as pulp-capping material. Copyright © 2012 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  17. The effect of oxidation on physical properties of porous silicon layers for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

    2006-12-15

    In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

  18. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  19. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    Science.gov (United States)

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  20. Adaptable silicon-carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes.

    Science.gov (United States)

    Wang, Bin; Li, Xianglong; Zhang, Xianfeng; Luo, Bin; Jin, Meihua; Liang, Minghui; Dayeh, Shadi A; Picraux, S T; Zhi, Linjie

    2013-02-26

    Silicon has been touted as one of the most promising anode materials for next generation lithium ion batteries. Yet, how to build energetic silicon-based electrode architectures by addressing the structural and interfacial stability issues facing silicon anodes still remains a big challenge. Here, we develop a novel kind of self-supporting binder-free silicon-based anodes via the encapsulation of silicon nanowires (SiNWs) with dual adaptable apparels (overlapped graphene (G) sheaths and reduced graphene oxide (RGO) overcoats). In the resulted architecture (namely, SiNW@G@RGO), the overlapped graphene sheets, as adaptable but sealed sheaths, prevent the direct exposure of encapsulated silicon to the electrolyte and enable the structural and interfacial stabilization of silicon nanowires. Meanwhile, the flexible and conductive RGO overcoats accommodate the volume change of embedded SiNW@G nanocables and thus maintain the structural and electrical integrity of the SiNW@G@RGO. As a result, the SiNW@G@RGO electrodes exhibit high reversible specific capacity of 1600 mAh g⁻¹ at 2.1 A g⁻¹, 80% capacity retention after 100 cycles, and superior rate capability (500 mAh g⁻¹ at 8.4 A g⁻¹) on the basis of the total electrode weight.

  1. Photocurrent enhancement in nanocoatings of cerium oxide and platinum on black silicon

    Science.gov (United States)

    Dahal, Pabitra; Pereira, Dionisio; Elamurugu, Elangovan; Viegas, Jaime

    2017-02-01

    Black silicon is surface modification by reactive ion etching that creates a forest of silicon micro-spikes and increases surface area of the sample. When the spikes' height exceed an optical wavelength, light is trapped on the surface through multiple pathway scattering, increasing the optical absorption of visible and near infrared radiation. Cerium oxide (CeO2) is believed to have good photoactivity, and finds many applications including photoelectrolysis. However, the large band gap limits the efficiency of the water splitting process. We suggest black silicon surfaces as substrates for CeO2 sputter coating to increase photon-material interaction. An additional catalytic layer of platinum is deposited to create highly energetic electrons as a result of plasmonic resonance and enhances incident photon to current efficiency (IPCE). The difference of surface current for laser on and off condition is found to be 32 times higher in a nanolayered coated black silicon sample as compared to flat silicon. The resistance of flat silicon substrate was 11 Ω for laser-off state, decreasing to 9 Ω when the laser was turned on. On the other hand, the black silicon substrate sample had a higher resistance of 70 Ω in dark which decreased to 1.5 Ω for laser on state.

  2. Ultracompact Silicon-Conductive Oxide Nanocavity Modulator with 0.02 Lambda-Cubic Active Volume.

    Science.gov (United States)

    Li, Erwen; Gao, Qian; Chen, Ray T; Wang, Alan X

    2018-02-14

    Silicon photonic modulators rely on the plasma dispersion effect by free-carrier injection or depletion, which can only induce moderate refractive index perturbation. Therefore, the size and energy efficiency of silicon photonic modulators are ultimately limited as they are also subject to the diffraction limit. Here we report an ultracompact electro-optic modulator with total device footprint of 0.6 × 8 μm 2 by integrating voltage-switched transparent conductive oxide with one-dimensional silicon photonic crystal nanocavity. The active modulation volume is only 0.06 um 3 , which is less than 2% of the lambda-cubic volume. The device operates in the dual mode of cavity resonance and optical absorption by exploiting the refractive index modulation from both the conductive oxide and the silicon waveguide induced by the applied gate voltage. Such a metal-free, hybrid silicon-conductive oxide nanocavity modulator also demonstrates only 0.5 dB extra optical loss, moderate Q-factor above 1000, and high energy efficiency of 46 fJ/bit. The combined results achieved through the holistic design opened a new route for the development of next generation electro-optic modulators that can be used for future on-chip optical interconnects.

  3. Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide

    Science.gov (United States)

    Wietler, T. F.; Tetzlaff, D.; Krügener, J.; Rienäcker, M.; Haase, F.; Larionova, Y.; Brendel, R.; Peibst, R.

    2017-06-01

    In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole formation that is induced in the thermal processing of the poly-Si on oxide (POLO) junctions is essential for optimizing their electronic performance. We observe the pinholes in the oxide layer by selective etching of the underlying crystalline silicon. The originally nm-sized pinholes are thus readily detected using simple optical and scanning electron microscopy. The resulting pinhole densities are in the range of 6.6 × 106 cm-2 to 1.6 × 108 cm-2 for POLO junctions with selectivities close to S10 = 16, i.e., saturation current density J0c below 10 fA/cm2 and contact resistivity ρc below 10 mΩcm2. The measured pinhole densities agree with values deduced by a pinhole-mediated current transport model. Thus, we conclude pinhole-mediated current transport to be the dominating transport mechanism in the POLO junctions investigated here.

  4. Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

    Energy Technology Data Exchange (ETDEWEB)

    Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

    2009-10-15

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  5. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    Science.gov (United States)

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-07

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar+ ions

    International Nuclear Information System (INIS)

    Mammeri, S.; Ouichaoui, S.; Ammi, H.; Zemih, R.

    2010-01-01

    The sputtering of bismuth thin films induced by 20-160 keV Ar + ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and φ = 1.5 x 10 16 cm -2 , leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar + ion fluence for a fixed ion energy exhibit a significant depression at very low φ-values followed by a steady state regime above ∼2.0 x 10 14 cm -2 . Measured sputtering yields versus Ar + ion energy with fixing ion fluence to 1.2 x 10 16 cm -2 in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.

  7. Study of oxide precipitates in silicon using X-ray diffraction techniques

    Czech Academy of Sciences Publication Activity Database

    Caha, O.; Bernatová, S.; Meduňa, M.; Svoboda, Milan; Buršík, Jiří

    2011-01-01

    Roč. 208, č. 11 (2011), s. 2587-2590 ISSN 1862-6300 R&D Projects: GA ČR(CZ) GA202/09/1013 Institutional research plan: CEZ:AV0Z20410507 Keywords : high-resolution X-ray diffraction * oxide precipitates * silicon Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.463, year: 2011

  8. Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

    NARCIS (Netherlands)

    Xu, J.Y.; Bronsveld, P.M.; Boom, G.; Hosson, J.Th.M. De

    1984-01-01

    Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect

  9. Structure-activity relationships of carbon-supported platinum-bismuth and platinum-antimony oxidation catalysts

    CSIR Research Space (South Africa)

    Maphoru, MV

    2017-04-01

    Full Text Available Compositional and morphological studies on supported platinum are important for the improvement and expanded use of catalysts for oxidative coupling reactions. Nanocomposites consisting of 5% Pt supported on activated carbon and promoted with 5% Bi...

  10. The effects of phosphorus implantation on the anodic oxidation of silicon

    International Nuclear Information System (INIS)

    Kisielewicz, M.

    1985-01-01

    The effect of phosphorus implantation on the anodic oxidation-rate of p-type silicon (the enhancement oxidation-rate) has been studied for a wide range of energies, doses, dose rates and anneal conditions. The procedure use in the work, i.e. step by step formation of thin films of silicon oxide by anodic oxidation of ion-implanted wafer and subsequent removal of the film by an etch with dilute hydrofluoric acid, gave information about the depth distribution of the oxide growth rate as a function of implant and anneal conditions. By means of comparison of the OGR profiles with those for ion and damage predicted theoretically, the effect of the high concentration of implanted atoms (for considerably high-dose implants) has been separated from the effect of enhanced oxidation-rate due to void agglomerates (at low and moderately low dose implants). The data for P-implanted Si is discussed together with results for N, Ne, Si, Ar, As, Kr, Xe and Au-implanted silicon. (author)

  11. A Model for the Oxidation of Carbon Silicon Carbide Composite Structures

    Science.gov (United States)

    Sullivan, Roy M.

    2004-01-01

    A mathematical theory and an accompanying numerical scheme have been developed for predicting the oxidation behavior of carbon silicon carbide (C/SiC) composite structures. The theory is derived from the mechanics of the flow of ideal gases through a porous solid. The result of the theoretical formulation is a set of two coupled nonlinear differential equations written in terms of the oxidant and oxide partial pressures. The differential equations are solved simultaneously to obtain the partial vapor pressures of the oxidant and oxides as a function of the spatial location and time. The local rate of carbon oxidation is determined using the map of the local oxidant partial vapor pressure along with the Arrhenius rate equation. The nonlinear differential equations are cast into matrix equations by applying the Bubnov-Galerkin weighted residual method, allowing for the solution of the differential equations numerically. The numerical method is demonstrated by utilizing the method to model the carbon oxidation and weight loss behavior of C/SiC specimens during thermogravimetric experiments. The numerical method is used to study the physics of carbon oxidation in carbon silicon carbide composites.

  12. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  13. Activation of macrophages by silicones: phenotype and production of oxidant metabolites

    Directory of Open Access Journals (Sweden)

    Sodero Natalia

    2002-07-01

    Full Text Available Abstract Background The effect of silicones on the immune function is not fully characterized. In clinical and experimental studies, immune alterations associated with silicone gel seem to be related to macrophage activation. In this work we examined in vivo, phenotypic and functional changes on peritoneal macrophages early (24 h or 48 h and late (45 days after the intraperitoneal (i.p. injection of dimethylpolysiloxane (DMPS (silicone. We studied the expression of adhesion and co-stimulatory molecules and both the spontaneous and the stimulated production of reactive oxygen intermediates and nitric oxide (NO. Results The results presented here demonstrate that the fluid compound DMPS induced a persistent cell recruitment at the site of the injection. Besides, cell activation was still evident 45 days after the silicone injection: activated macrophages exhibited an increased expression of adhesion (CD54 and CD44 and co-stimulatory molecules (CD86 and an enhanced production of oxidant metabolites and NO. Conclusions Silicones induced a persistent recruitment of leukocytes at the site of the injection and macrophage activation was still evident 45 days after the injection.

  14. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  15. The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

    International Nuclear Information System (INIS)

    Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

    1997-01-01

    The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

  16. Optical properties of bismuth-doped silica fibres in the temperature range 300 - 1500 K

    Energy Technology Data Exchange (ETDEWEB)

    Dvoretskii, D A; Bufetov, Igor' A; Vel' miskin, V V; Zlenko, Alexander S; Khopin, V F; Semjonov, S L; Guryanov, Aleksei N; Denisov, L K; Dianov, Evgenii M

    2012-09-30

    The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi{sup 3+} profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications)

  17. Effects of oxidation and hot corrosion on the erosion of silicon nitride

    International Nuclear Information System (INIS)

    Kim, Jong Jip

    2005-01-01

    The effect of oxidation and hot corrosion on the solid particle erosion was investigated for hot-pressed silicon nitride using as- polished, pre-oxidized and pre-corroded specimens by molten sodium sulfates. Erosion tests were performed at 22, 500 and 900 .deg. C using angular silicon carbide particles of mean diameter 100 μm. Experimental results show that solid particle erosion rate of silicon nitride increases with increasing temperature for as-polished or pre-oxidized specimens in consistent with the prediction of a theoretical model. Erosion rate of pre-oxidized specimens is lower than that of as-polished specimens at 22 .deg. C, but it is higher at 900 .deg. C. Lower erosion rate at 22 .deg. C in the pre-oxidized specimens is attributed due to the blunting of surface flaws, and the higher erosion rate at 900 .deg. C is due to brittle lateral cracking. Erosion rate of pre-corroded specimens decreases with increasing temperature. Less erosion at 900 .deg. C than at 22 .deg. C is associated with the liquid corrosion products sealing off pores at 900 .deg. C and the absence of inter-granular crack propagation observed at 22 .deg. C

  18. Scalable Preparation of Ternary Hierarchical Silicon Oxide-Nickel-Graphite Composites for Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang , Jing [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; National Development Center of High Technology Green Materials, Beijing 100081 China; Innovation Center of Electric Vehicles, Beijing 100081 China; Bao, Wurigumula [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; Ma, Lu [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Avenue Lemont Illinois 60439 USA; Tan, Guoqiang [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; Su , Yuefeng [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; National Development Center of High Technology Green Materials, Beijing 100081 China; Innovation Center of Electric Vehicles, Beijing 100081 China; Chen , Shi [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; National Development Center of High Technology Green Materials, Beijing 100081 China; Innovation Center of Electric Vehicles, Beijing 100081 China; Wu , Feng [School of Materials Science and Engineering, Beijing Key Laboratory of Environmental Science and Engineering, Beijing Institute of Technology, Beijing 100081 China; National Development Center of High Technology Green Materials, Beijing 100081 China; Innovation Center of Electric Vehicles, Beijing 100081 China; Lu, Jun [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Avenue Lemont Illinois 60439 USA; Amine, Khalil [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Avenue Lemont Illinois 60439 USA

    2015-11-09

    Silicon monoxide is a promising anode candidate because of its high theoretical capacity and good cycle performance. To solve the problems associated with this material, including large volume changes during charge-discharge processes, we report a ternary hierarchical silicon oxide–nickel–graphite composite prepared by a facile two-step ball-milling method. The composite consists of nano-Si dispersed silicon oxides embedded in nano-Ni/graphite matrices (Si@SiOx/Ni/graphite). In the composite, crystalline nano-Si particles are generated by the mechanochemical reduction of SiO by ball milling with Ni. These nano-Si dispersed oxides have abundant electrochemical activity and can provide high Li-ion storage capacity. Furthermore, the milled nano-Ni/graphite matrices stick well to active materials and interconnect to form a crosslinked framework, which functions as an electrical highway and a mechanical backbone so that all silicon oxide particles become electrochemically active. Owing to these advanced structural and electrochemical characteristics, the composite enhances the utilization efficiency of SiO, accommodates its large volume expansion upon cycling, and has good ionic and electronic conductivity. The composite electrodes thus exhibit substantial improvements in electrochemical performance. This ternary hierarchical Si@SiOx/Ni/graphite composite is a promising candidate anode material for high-energy lithium-ion batteries. Additionally, the mechanochemical ball-milling method is low cost and easy to reproduce, indicating potential for the commercial production of the composite materials.

  19. Modulation of the Casimir force by laser pulses: Influence of oxide films on the silicon surface

    Science.gov (United States)

    Klimchitskaya, G. L.; Bukina, M. N.; Churkin, Yu. V.; Yurova, V. A.

    2010-10-01

    The possibility of modulating the Casimir force that acts in an air medium between a gold sphere and a silicon plate irradiated by laser pulses has been studied. It has been demonstrated that the oxide film that is formed on the silicon surface in air hardly affects the possibility of modulating the Casimir force when the distances between interacting bodies are of the order of 100 nm. With an increase in the distance, the modulation depth decreases; however, this region is of less practical interest, because the Casimir forces become too weak.

  20. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  1. Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Miraj, E-mail: m.shah@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Wojdak, Maciej; Kenyon, Anthony J. [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Halsall, Matthew P.; Li, Hang; Crowe, Iain F. [Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville St Building, Manchester M13 9PL (United Kingdom)

    2012-12-15

    Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er{sup 3+} ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component. In this paper, we report on SiO{sub 2} thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 {mu}m Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast {mu}s decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

  2. A reactive molecular dynamic simulation of oxidation of a silicon nanocluster

    International Nuclear Information System (INIS)

    Song Pengxiang; Ding Yulong; Wen Dongsheng

    2013-01-01

    This study presents an atomic level of molecular dynamic simulation of oxidation of silicon nanoparticle in use of a reactive force field (ReaxFF). The oxidation dynamics is revealed through the energy release, bond evolution and oxygen exchange processes. The oxidation is found to proceed in the manner of evolution of silicon–oxygen bond configuration, accompanied by the oxygen exchange process. The heat of reaction and the activation energy of the bond transformation process are also estimated, which indicates the capability of ReaxFF in the simulation of energetic materials.

  3. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  4. Refining method for bismuth nitrate

    International Nuclear Information System (INIS)

    Shibata, Shigeyuki.

    1997-01-01

    The present invention concerns a method of separating and removing α ray emitting nuclides present in an aqueous solution of bismuth nitrate by an industrially convenient method. A nitric acid concentration in the aqueous solution of bismuth nitrate in which α ray emitting nuclides are dissolved is lowered to coprecipitate the bismuth oxynitrate and the α ray emitting nuclides. The coprecipitation materials are separated from the aqueous solution of bismuth nitrate to separate the α ray emitting nuclides dissolved in the aqueous solution of bismuth nitrate thereby refining the aqueous solution of bismuth nitrate. (T.M.)

  5. pH-driven assembly of various supported lipid platforms: a comparative study on silicon oxide and titanium oxide.

    Science.gov (United States)

    Cho, Nam-Joon; Jackman, Joshua A; Liu, Michael; Frank, Curtis W

    2011-04-05

    Supported lipid platforms are versatile cell membrane mimics whose structural properties can be tailored to suit the application of interest. By identifying parameters that control the self-assembly of these platforms, there is potential to develop advanced biomimetic systems that overcome the surface specificity of lipid vesicle interactions under physiological conditions. In this work, we investigated the adsorption kinetics of vesicles onto silicon and titanium oxides as a function of pH. On each substrate, a planar bilayer and a layer of intact vesicles could be self-assembled in a pH-dependent manner, demonstrating the role of surface charge density in the self-assembly process. Under acidic pH conditions where both zwitterionic lipid vesicles and the oxide films possess near-neutral electric surface charges, vesicle rupture could occur, demonstrating that the process is driven by nonelectrostatic interactions. However, we observed that the initial rupturing process is insufficient for propagating bilayer formation. The role of electrostatic interactions for propagating bilayer formation differs for the two substrates; electrostatic attraction between vesicles and the substrate is necessary for complete bilayer formation on titanium oxide but is not necessary on silicon oxide. Conversely, in the high pH regime, repulsive electrostatic interactions can result in the irreversible adsorption of intact vesicles on silicon oxide and even a reversibly adsorbed vesicle layer on titanium oxide. Together, the results show that pH is an effective tool to modulate vesicle-substrate interactions in order to create various self-assembled lipid platforms on hydrophilic substrates.

  6. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  7. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  8. Poisoning effect of bismuth on modification behaviour of strontium in ...

    Indian Academy of Sciences (India)

    also be added to aluminum–magnesium alloys to counteract. ∗. Author for correspondence (saeedfarahany@gmail.com, fsaeed2@live.utm.my) the detrimental effect of sodium on hot cracking (Talbot and. Ransley 1997). Pillai and Anantharaman (1968) reported that bismuth could play a role as silicon modifier whereas ...

  9. Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

    Science.gov (United States)

    Fay, P.; Brockenbrough, R. T.; Abeln, G.; Scott, P.; Agarwala, S.; Adesida, I.; Lyding, J. W.

    1994-06-01

    The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

  10. Cell adhesion, morphology and biochemistry on nano-topographic oxidized silicon surfaces

    Directory of Open Access Journals (Sweden)

    T-L Shen

    2010-12-01

    Full Text Available Manipulating an incorporated scaffold to direct cell behaviors play a key role in tissue engineering. In this study, we developed novel nano-topographic oxidized silicon nanosponges capable of being modified with various chemicals of a few nm in thickness to gain further insight into the fundamental biology of cell-environment interactions in vitro. A wet etching technique was applied to fabricate the silicon nanosponges in a high-throughput manner and was followed by vapor deposition of various organo-silane chemicals to enable self-assembly on the surfaces of the silicon nanosponges. When Chinese hamster ovary cells were cultured on these chemically modified nano-topographic structures, they displayed distinct morphogenesis, adherent responses, and biochemical properties in comparison with those of their planar oxidized silicon counterparts. There were predominant nano-actin punches and slender protrusions formed while cells were cultured on the nano-topographic structures, indicating that cell behaviors can be influenced by the physical characteristic derived from nano-topography, in addition to the hydrophobicity of contact surfaces. This study demonstrates potential applications of these nano-topographic biomaterials for controlling cell development in tissue engineering as well as in basic cell biology research.

  11. Effects of X or gamma radiation dose on vitreous silicon oxides and Silicon On Insulator buried oxides by the study of trapped charges and paramagnetic defects

    International Nuclear Information System (INIS)

    Leray, J.L.; Coic, Y.M.; Margail, J.

    1991-01-01

    Silicon On Insulator (SOI-SIMOX) buried oxides and Suprasil silica glasses have been irradiated so as to compare charge trapping and paramagnetic defect center generation phenomena. Parameters used in the study were: X or γ-ray irradiation, and electric field bias applied during irradiation. Positive or negative charge trapping is depending upon the sign of the bias field in the SIMOX (Separation by Implantation of Oxygen) buried MOS structure, and is correlated with E' paramagnetic center generation. In the two cases, the charge trapping mechanism or E' center generation are very sensitive to the electric field magnitude. In the SIMOX oxide, synthesized by oxygen implant, the EPR spectrum is confirmed to exhibit a characteristic 2-peak structure

  12. The effects of trichloroethane HCl and ion-implantation on the oxidation rate of silicon

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, E.

    1994-01-01

    The thermal oxidation of silicon was studied using a large-scale industrial oxidation system. The characteristics of the oxides resulting from pure hydrogen/oxygen (Hsub(2)/Osub(2)), trichloroethane/oxygen (TCA/Osub(2) and hydrogen chloride/oxygen (HCI/Osub(2)) mixtures are compared. Both HCI and TCA addition to oxygen produced an enhanced oxidation rate. The oxidation rate for TCA/Osub(2) was approximately 30-40% higher than for HCI/Osub(2) mixtures. A molar ratio of TCA/Osub(2) of 1% gives an optimum process for very-large-scale industrial (VLSI) applications. However, 3% HCI/Osub(2) gives comparable results to 1% TCA. In addition, boron and phosphorus implantation are observed to increase the oxidation rate. Phosphorus doping of the silicon yields a higher rate than boron-doped wafers. This behaviour is explained in terms of surface damage and chemistry. It appears that the overall mechanisms governing all these processes are similar. (8 figures, 22 references) (Author)

  13. Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.

    Science.gov (United States)

    Hong, T; Chen, T; Ran, G Z; Wen, J; Li, Y Z; Dai, T; Qin, G G

    2010-01-15

    An enhancement of the electroluminescence (EL) from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide (AAO) pattern was demonstrated. The nanoporous AAO pattern with a pore density of 1.4 x 10(10) cm(-2) and a pore diameter of 50 +/- 10 nm was fabricated by the two-step anodic oxidation method on a n-type silicon wafer. The nanoscale AAO patterned Si p(+)-n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Si p(+)-n junctions. The enhancement may originate from a reduction of nonradiative recombination due to partial passivation of the Si surface by the AAO pattern and improvement of the light extraction due to surface nanotextures.

  14. Synergy effects between bismuth molybdate catalyst phases (Bi/Mo from 0.57 to 2) for the selective oxidation of propylene to arcrolein

    DEFF Research Database (Denmark)

    Le, Minh Thang; Well, Willy van; Stoltze, Per

    2005-01-01

    In this work, the synergy effect between different phases of bismuth molybdate catalysts was investigated systematically. The catalysts were prepared by spray drying and had a Bi/Mo atomic between 0.57 and 2. It is found that the synergy effect is only observed in mixtures containing γ...

  15. Complete coverage of reduced graphene oxide on silicon dioxide substrates

    International Nuclear Information System (INIS)

    Jingfeng Huang; Hu Chen; Yoong Alfred Tok Iing; Larisika, Melanie; Nowak, Christoph; Faulkner, Steve; Nimmo, Myra A.

    2014-01-01

    Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices. (special topic — international conference on nanoscience and technology, china 2013)

  16. Dimensions of luminescent oxidized and porous silicon structures

    Science.gov (United States)

    Schuppler, S.; Friedman, S. L.; Marcus, M. A.; Adler, D. L.; Xie, Y.-H.; Ross, F. M.; Harris, T. D.; Brown, W. L.; Chabal, Y. J.; Brus, L. E.; Citrin, P. H.

    1994-04-01

    X-ray absorption measurements from H-passivated porous Si and from oxidized Si nanocrystals, combined with electron microscopy, ir absorption, α recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the visible luminescence observed in these samples. The mass-weighted average structures in por-Si are particles, not wires, with dimensions significantly smaller than previously reported or proposed.

  17. Scalable Preparation of Ternary Hierarchical Silicon Oxide-Nickel-Graphite Composites for Lithium-Ion Batteries.

    Science.gov (United States)

    Wang, Jing; Bao, Wurigumula; Ma, Lu; Tan, Guoqiang; Su, Yuefeng; Chen, Shi; Wu, Feng; Lu, Jun; Amine, Khalil

    2015-12-07

    Silicon monoxide is a promising anode candidate because of its high theoretical capacity and good cycle performance. To solve the problems associated with this material, including large volume changes during charge-discharge processes, we report a ternary hierarchical silicon oxide-nickel-graphite composite prepared by a facile two-step ball-milling method. The composite consists of nano-Si dispersed silicon oxides embedded in nano-Ni/graphite matrices (Si@SiOx /Ni/graphite). In the composite, crystalline nano-Si particles are generated by the mechanochemical reduction of SiO by ball milling with Ni. These nano-Si dispersed oxides have abundant electrochemical activity and can provide high Li-ion storage capacity. Furthermore, the milled nano-Ni/graphite matrices stick well to active materials and interconnect to form a crosslinked framework, which functions as an electrical highway and a mechanical backbone so that all silicon oxide particles become electrochemically active. Owing to these advanced structural and electrochemical characteristics, the composite enhances the utilization efficiency of SiO, accommodates its large volume expansion upon cycling, and has good ionic and electronic conductivity. The composite electrodes thus exhibit substantial improvements in electrochemical performance. This ternary hierarchical Si@SiOx /Ni/graphite composite is a promising candidate anode material for high-energy lithium-ion batteries. Additionally, the mechanochemical ball-milling method is low cost and easy to reproduce, indicating potential for the commercial production of the composite materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Silicon oxide based high capacity anode materials for lithium ion batteries

    Science.gov (United States)

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  19. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  20. Evidence of discrete interface traps on thermally grown thin silicon oxide films

    Science.gov (United States)

    Cai, Jin; Sah, Chih-Tang

    1999-01-01

    A very-low density (oxide. Three signatures pointing to discreteness are delineated in the experimental data of the gate voltage modulation of the dc steady-state electron-hole recombination rate. Using the Shockley-Read-Hall recombination kinetics, the energy level is shown to have a linewidth less than 20 meV. From the present and previous data, the dopant impurity origin of this residual interface trap species is speculated rather than the amphoteric silicon dangling bonds.

  1. Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

    Science.gov (United States)

    Buckley, D. H.; Spalvins, T.

    1977-01-01

    Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

  2. Synthesis of bismuth (III oxide films based anodes for electrochemical degradation of reactive blue 19 and crystal violet

    Directory of Open Access Journals (Sweden)

    Petrović Milica M.

    2014-01-01

    Full Text Available The Bi2O3 films-based anodes were synthesized by electrodeposition of Bi on stainless steel substrate at constant current density and during different deposition times, fallowed by calcination, forming Bi2O3. The thickness of the films was determined by two methods: the observation under the microscope and by calculation from mass difference. Electrochemical proceses at the anodes were ivestigated by linear sweep voltammetry. At the anodes obtained within 2, 5, 10 and 15 minutes of deposition, two dyes, namely: Reactive Blue 19 and Crystal Violet, were decolorized by oxidation with •OH radical, generated from H2O2 decomposition at the anodes. Decoloration times of the anodes varied, and the shortest one was achieved with the anode obtained during 5 minutes of deposition, with the film thickness of 2.5±0.3 μm. The optimal H2O2 concentration for the dyes degradation was found to be 10 mmol dm-3. [Projekat Ministarstva nauke Republike Srbije, br. ТR 34008

  3. Interface bonding in silicon oxide nanocontacts: interaction potentials and force measurements

    Science.gov (United States)

    Wierez-Kien, M.; Craciun, A. D.; Pinon, A. V.; Le Roux, S.; Gallani, J. L.; Rastei, M. V.

    2018-04-01

    The interface bonding between two silicon-oxide nanoscale surfaces has been studied as a function of atomic nature and size of contacting asperities. The binding forces obtained using various interaction potentials are compared with experimental force curves measured in vacuum with an atomic force microscope. In the limit of small nanocontacts (typically measured with sensitive probes the bonding is found to be influenced by thermal-induced fluctuations. Using interface interactions described by Morse, embedded atom model, or Lennard-Jones potential within reaction rate theory, we investigate three bonding types of covalent and van der Waals nature. The comparison of numerical and experimental results reveals that a Lennard-Jones-like potential originating from van der Waals interactions captures the binding characteristics of dry silicon oxide nanocontacts, and likely of other nanoscale materials adsorbed on silicon oxide surfaces. The analyses reveal the importance of the dispersive surface energy and of the effective contact area which is altered by stretching speeds. The mean unbinding force is found to decrease as the contact spends time in the attractive regime. This contact weakening is featured by a negative aging coefficient which broadens and shifts the thermal-induced force distribution at low stretching speeds.

  4. Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structures

    Science.gov (United States)

    Singh, N.; Rys, A.

    1993-02-01

    The fabrication of metal-oxide-semiconductor (MOS) capacitors on n-type, Si-face 6H-SiC is described for both wet and dry oxidation processes, and the effect of thermal oxidation conditions on the electrical properties of MOS capacitors are investigated. The values of the oxide thickness were obtained as a function of the oxidation time at various oxidation temperatures (which were kept between 1150 and 1250 C). It was found that samples prepared by both dry and wet oxidation showed accumulation, depletion, and inversion regions under illumination, while inversion did not occur under dark conditions. The C-V characteristics of oxidized samples were improved after the oxidized samples were annealed in argon for 30 min. The relation between the oxide thickness and the oxidation time could be expressed by parabolic law, which is also used for thermal oxidation of Si.

  5. Sintering of silicon nitride ceramics with magnesium silicon nitride and yttrium oxide as sintering aids

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, J; Xu, J Y [Shanghai Institute of Technology, Shanghai 200235 (China); Peng, G H [Guangxi Normal University, Guilin 541004, Guangxi (China); Zhuang, H R; Li, W L; Xu, S Y [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mao, Y J, E-mail: guojianjiang@sit.edu.cn [Shanghai University, Shanghai 200444 (China)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramics had been produced through pressureless sintering and hot-pressing sintering with MgSiN{sub 2}-Y{sub 2}O{sub 3} or only MgSiN{sub 2} as sintering aids. The influences of the amount of MgSiN{sub 2} and Y{sub 2}O{sub 3} and sintering methods on the properties of Si{sub 3}N{sub 4} ceramics were investigated. The results show that the bend strength of Si{sub 3}N{sub 4} ceramic fabricated through pressureless sintering at 1820 deg. C for 4 h with 5.6 wt.% MgSiN{sub 2}-15.8 wt.% Y{sub 2}O{sub 3} as sintering additive could achieve 839 MPa. However, the bend strength of Si{sub 3}N{sub 4} ceramic produced by hot-pressing sintering at 1750 deg. C for 1 h under uniaxial pressure of 20 MPa with 4.76 wt.% MgSiN{sub 2} was 1149 MPa. The thermal conductivity of the Si{sub 3}N{sub 4} ceramic 2 3 4 could reach to 129 W{center_dot}m{sup -1{center_dot}}K{sup 1}. The present work demonstrated that MgSiN{sub 2} aids and hot-pressing sintering were effective to improve the thermal conductivity of Si{sub 3}N{sub 4} ceramic.

  6. Analysis of Carrier Traps in Si3N4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

    Science.gov (United States)

    Aozasa, Hiroshi; Fujiwara, Ichiro; AkihiroNakamura, AkihiroNakamura; Komatsu, Yasutoshi

    1999-03-01

    The energy level, density and attempt to escape frequency ofcarrier traps in an Si3N4 film in tunnel oxide/nitride/oxide(ONO) multilayer for metal/oxide/nitride/oxide/silicon (MONOS)nonvolatile memory are investigated by discharging current transientspectroscopy (DCTS). To analyze the electrical properties of carriertraps observed through DCTS, a new model including the tunnelingprobability of the tunnel oxide film between the Si3N4 filmand an Si substrate was proposed. As a result, the electron traps inthe Si3N4 film, which are assumed to be related to thethreshold voltage decay, i.e. data retention, were found for the firsttime. The energy level of the electron traps in the Si3N4film in the ONO multilayer was 0.8 0.9 eV from the conduction bandand the density was 1 5×1018 cm-3. Theattempt to escape frequency of 2×1014 s-1 was alsoobtained. The energy level of the hole traps and its density were0.8 0.9 eV from the top of the valence band and 1 4×1018 cm-3, respectively. The magnitude of the trap density obtained from DCTS shows good agreement with that obtained from memory hysteresis characteristics. These results indicate that their carrier traps are amphoteric traps.

  7. Formation of silicon nanoislands on crystalline silicon substrates by thermal annealing of silicon rich oxide deposited by low pressure chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves-Mijares, Mariano; Luna-Lopez, A; Du Jinhui; Bian Dongcai

    2006-01-01

    We report the preparation and characterization of Si nanoislands grown on a c-Si substrate by thermal annealing of silicon-rich oxide (SRO) films deposited using a conventional low pressure chemical vapour deposition (LPCVD) technique. Transmission electron microscopy revealed that a high density of Si nanoislands was formed on the surface of the c-Si substrate during thermal annealing. The nanoislands are nanocrystallites with the same crystal orientation as the substrate. The strain at the c-Si/SRO interface is probably the main reason for the nucleation of the self-assembled Si nanoislands that epitaxially grow on the c-Si substrate. The proposed method is very simple and compatible with Si integrated circuit technology

  8. Radical-mediated adsorption: Ozone oxidation of passivated silicon

    Science.gov (United States)

    Fink, Christian K.; Jenkins, Stephen J.

    2008-07-01

    We report first-principles molecular dynamics calculations on the initial oxidation of hydrogen-passivated Si{0 0 1} by ozone (O 3). We observe an intriguing radical-mediated adsorption mechanism, archetypal of a class not reported in the literature so far. Singlet ozone abstracts one hydrogen atom to form a short-lived hydrotrioxy radical (HO3rad ), before dissociating into surface hydroxyl ( sbnd OH) and gas-phase O 2. Vibrational and electronic analysis of the hydrotrioxy species confirms the genuine radical nature of the reaction intermediate.

  9. Isothermal and cyclic oxidation resistance of pack siliconized Mo–Si–B alloy

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Sanjib, E-mail: sanjib@barc.gov.in

    2017-08-31

    Highlights: • Pack-siliconizing of Mo–Si–B alloy improves its oxidation resistance at 750, 900 and 1400 °C. • A marginal weight change of the coated alloy is detected in isothermal and cyclic oxidation tests. • Kinetics of growth of protective SiO{sub 2} scale is much faster at 1400 °C. • Self-healing SiO{sub 2} is developed at the cracks formed in MoSi{sub 2} layer during cyclic oxidation tests. - Abstract: Oxidation behaviour of MoSi{sub 2} coated Mo–9Si–8B–0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi{sub 2} layer during thermal cycling. The dominant oxidation mechanisms at 750–900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  10. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  11. Estimation of oxide related electron trap energy of porous silicon nanostructures

    International Nuclear Information System (INIS)

    Das, Mainak Mohan; Ray, Mallar; Bandyopadhyay, Nil Ratan; Hossain, Syed Minhaz

    2010-01-01

    Estimation of electron trap energy (E t ), with respect to bulk Si valence band, of oxidized porous silicon (PS) nanostructures is reported. Photoluminescence (PL) spectra of oxidized PS prepared with different formation parameters have been investigated and the room temperature PL characteristics have been successfully explained on the basis of oxide related trap assisted transitions. PL peak energy for the oxidized samples with low porosity exhibited a blue shift with increasing formation current density (J). For the high porosity samples double peaks appeared in the PL spectra. One of these peaks remained constant at ∼730 nm while the other was blue shifted with increase in J. Evolution of PS nanostructure was correlated to the formation parameters using a simple growth mechanism. PS nanostructure was modelled as an array of regular hexagonal pores and the average value of E t was estimated to be 1.67 eV.

  12. Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure

    Science.gov (United States)

    Sameshima, Toshiyuki; Furukawa, Jun; Nakamura, Tomohiko; Shigeno, Satoshi; Node, Tomohito; Yoshidomi, Shinya; Hasumi, Masahiko

    2014-03-01

    We report the properties of features of photo induced minority carrier annihilation at the silicon surface in a metal-oxide-semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ω cm n-type 500-µm-thick crystalline silicon substrates coated with 100-nm-thick thermally grown SiO2 layers were prepared. Part of the SiO2 at the rear surface was removed. Al electrode bars were formed at the top and rear surfaces to form the structures Al/SiO2/Si/SiO2/Al and Al/SiO2/Si/Al. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode bar of the structure Al/SiO2/Si/SiO2/Al. Microwave transmittance was measured on the other side of the silicon region of the Al electrode bars. The measurement and analysis of microwave absorption by photo induced carriers laterally diffusing across the silicon region coated with Al electrodes revealed a change in the carrier recombination velocity at the silicon surface with the bias voltage applied onto the top Al electrode. The applied bias voltages of +2.0 and -2.2 V gave peaks at surface recombination velocities of 83 and 86 cm/s, respectively, for the sample structure Al/SiO2/Si/SiO2/Al, while it was 44 cm/s under the bias-free condition. A peak surface recombination velocity of 81 cm/s was only observed at a bias voltage of -2.0 V for the sample structure Al/SiO2/Si/Al.

  13. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  14. Synthesis and characterization of Bi{sub 31}Cr{sub 5}O{sub 61.5}, a new bismuth chromium oxide, potential mixed-ionic-electronic conductor for solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Colmont, Marie; Drache, Michel; Roussel, Pascal [Universite Lille Nord de France, Unite de Catalyse et de Chimie du Solide (UCCS), CNRS UMR 8181, 59655 Villeneuve d' Ascq Cedex (France)

    2010-11-01

    Single crystals, as well as pure powder of the new bismuth chromate, Bi{sub 31}Cr{sub 5}O{sub 61.5} were synthesized by slow cooling of a mixture of Bi{sub 2}O{sub 3}-Cr{sub 2}O{sub 3} and then fully structurally characterized using X-ray diffraction. It crystallizes in the monoclinic space group P2{sub 1}/n with unit cell parameters a = 23.5794(8), b = 11.6189(4), c = 24.3629(8) A and {beta} = 108.02(1) , Z = 4. The final conventional agreement factors converged to R = 0.0540 and wR = 0.0561 for 27520 independent reflections. The +VI chromium oxidation state was proved by thermogravimetric and magnetic measurements. The structure can be described by the association of isolated CrO{sub 4} tetrahedra surrounded by 11 or 12 Bi atoms forming truncated or not cuboctahedra. The stability of both pure powder sample and pressed sintered pellets was studied at elevated temperature by X-ray diffraction and by dilatometry previously to ionic conductivity measurements done by impedance spectroscopy. (author)

  15. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, R., E-mail: riahirim01@gmail.com [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Faculty of Sciences Tunis–El Manar University (Tunisia); Derbali, L. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Ouertani, B. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Environment Science and Technology of Borj-Cedria (Tunisia); Ezzaouia, H. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

    2017-05-15

    Highlights: • The treatment of porous silicon (PS) with nickel oxide (NiO) decreases the reflectivity significantly. • FTIR analysis showed a substitution of Si−H bonds to Si−O−Si and Si−O−Ni after the thermal annealing. • Annealing the treated NiO/PS at 400 °C leads to a noticeable improvement of the photoluminescence (PL) intensity. • A blueshift was obtained in the PL spectra due to the decrease of silicon nanocrystallites size after exceeding 400 °C. - Abstract: This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total

  16. Light-emitting structures of CdS nanocrystals in oxidized macroporous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Karachevtseva, L., E-mail: lakar@isp.kiev.ua [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China); V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauki pr., Kyiv 03028 (Ukraine); Kuchmii, S., E-mail: stephan@ukr.net [L. Pisarzhevsky Institute of Physical Chemistry NAS of Ukraine, 31 Nauki pr., Kyiv 03028 (Ukraine); Stroyuk, O., E-mail: alstroyuk@ukr.net [L. Pisarzhevsky Institute of Physical Chemistry NAS of Ukraine, 31 Nauki pr., Kyiv 03028 (Ukraine); Lytvynenko, O., E-mail: lytvole@gmail.com [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauki pr., Kyiv 03028 (Ukraine); Sapelnikova, O., E-mail: e_kolesnik84@mail.ru [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauki pr., Kyiv 03028 (Ukraine); Stronska, O., E-mail: yaschichek@ukr.net [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauki pr., Kyiv 03028 (Ukraine); Bo, Wang, E-mail: bo305@hotmail.com [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China); Kartel, M., E-mail: nikar@kartel.kiev.ua [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China)

    2016-12-01

    Highlights: • Oxidized macroporous silicon substrates enhance the nc-CdS photoluminescence. • The maximal photoluminescence corresponds to a maximum surface electric field. • Substrates decrease the non-radiate recombination on CdS nanocrystals. • The quantum yield increases with time due to evaporation of water molecules. - Abstract: Structured silicon substrates (macroporous silicon) with SiO{sub 2} nanolayers and CdS nanocrystals were proposed to reduce the flow of electrons and recombination outside the nanoparticle layer. It was found that the resonance electron scattering in samples with low concentration of Si−O−Si states transforms into ordinary scattering on ionized impurities for samples with high concentration of Si−O−Si states. The maximal intensity of photoluminescence was measured for a structure with maximum strength of the local electric field at the Si−SiO{sub 2} interface, indicating a significant decrease of non-radiative recombination in CdS nanocoating due to the flow of electrons from the silicon matrix towards the CdS nanocrystal layer. The quantum yield of photoluminescence increases with time due to evaporation of water molecules.

  17. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    Directory of Open Access Journals (Sweden)

    L. Shen

    2014-02-01

    Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  18. The kinetics and properties of thermal oxidation of silicon in TCA-O/sub 2/

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, E.

    1993-01-01

    The oxidation of silicon using dry O/sub 2/ is now well established as a key process for the fabrication of electronic devices in the semiconductor industry. However, this process is complicated by its sensitivity to impurities which reduce device yields. HCl can be added to O/sub 2/ to remove these impurities but due to its highly corrosive nature a safer and cleaner alternative such as trichloroethane (TCA) is desirable. In this paper, the thermal oxidation of silicon using a mixture of TCA-O/sub 2/ has been investigated in a large scale industrial system. The growth kinetics and the properties of these films have been studies and compared to oxides produced from dry 2. The addition of TCA generates HCl in situ, enhances the oxidation rate by approximately 54% nd improves the electrical properties. It was found that a 1 mol.% mixture gives the optimum process. An analysis of the data suggests that a liner parabolic growth model is applicable and provides a valuable insight into the physical phenomena governing this important process. (author)

  19. Fluorinated alkyne-derived monolayers on oxide-free silicon nanowires via one-step hydrosilylation

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh, Quyen [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Nanosens, IJsselkade 7, 7201 HB Zutphen (Netherlands); Pujari, Sidharam P. [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Wang, Bin [The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 3200003 (Israel); Wang, Zhanhua [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Haick, Hossam [The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 3200003 (Israel); Zuilhof, Han [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands); Rijn, Cees J.M. van, E-mail: cees.vanrijn@wur.nl [Laboratory of Organic Chemistry, Wageningen University, Stippeneng 4, 6708 WE Wageningen (Netherlands)

    2016-11-30

    Highlights: • Oxide-free H-terminated silicon nanowires undergo efficient surface modification by reaction with fluorinated 1-alkynes (HC≡C−(CH{sub 2}){sub 6}C{sub 8}H{sub 17−x}F{sub x}; x = 0–17). • These surface-modified Si NWs are chemically stable under range of conditions (including acid, base). • The surface coating yields efficient electrical passivation as demonstrated by a near-zero electrochemical activity of the surface. - Abstract: Passivation of oxide-free silicon nanowires (Si NWs) by the formation of high-quality fluorinated 1-hexadecyne-derived monolayers with varying fluorine content has been investigated. Alkyl chain monolayers (C{sub 16}H{sub 30−x}F{sub x}) with a varying number of fluorine substituents (x = 0, 1, 3, 9, 17) were attached onto hydrogen-terminated silicon (Si−H) surfaces with an effective one-step hydrosilylation. This surface chemistry gives well-defined monolayers on nanowires that have a cylindrical core–shell structure, as characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and static contact angle (SCA) analysis. The monolayers were stable under acidic and basic conditions, as well as under extreme conditions (such as UV exposure), and provide excellent surface passivation, which opens up applications in the fields of field effect transistors, optoelectronics and especially for disease diagnosis.

  20. Electrocatalytic activity of bismuth doped silver electrodes

    CERN Document Server

    Amjad, M

    2002-01-01

    Investigation of redox reactions on silver, and bismuth doped silver electrodes in aqueous KOH solutions, by using potentiostatic steady-state polarization technique, has been carried out. The redox wave potential and current displacements along with multiplicity of the latter have been examined. These electrodes were employed for the oxidation of organic molecules such as ethylamine in alkaline media. Subsequently, these electrodes were ranked with respect to their activity for the redox reactions. (author)

  1. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

    Science.gov (United States)

    Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthias; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.

    2013-02-01

    The ability to control physical properties of silicon nanowires (Si NWs) by designing their surface bonds is important for their applicability in devices in the areas of nano-electronics, nano-photonics, including photovoltaics and sensing. In principle a wealth of different molecules can be attached to the bare Si NW surface atoms to create e.g. Si-O, Si-C, Si-N, etc. to mention just the most prominent ones. Si-O bond formation, i.e. oxidation usually takes place automatically as soon as Si NWs are exposed to ambient conditions and this is undesired is since a defective oxide layer (i.e. native silicon dioxide - SiO2) can cause uncontrolled trap states in the band gap of silicon. Surface functionalization of Si NW surfaces with the aim to avoid oxidation can be carried out by permitting e.g. Si-C bond formation when alkyl chains are covalently attached to the Si NW surfaces by employing a versatile two-step chlorination/alkylation process that does not affect the original length and diameter of the NWs. Termination of Si NWs with alkyl molecules through covalent Si-C bonds can provide long term stability against oxidation of the Si NW surfaces. The alkyl chain length determines the molecular coverage of Si NW surfaces and thus the surface energy and next to simple Si-C bonds even bond types such as Cdbnd C and Ctbnd C can be realized. When integrating differently functionalized Si NWs in functional devices such as field effect transistors (FETs) and solar cells, the physical properties of the resultant devices vary.

  2. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  3. Infrared study of the oxidation of porous silicon: evidence of surface modes

    Energy Technology Data Exchange (ETDEWEB)

    Acquaroli, L.N. [INTEC (CONICET-UNL), Santa Fe (Argentina); Brondino, A. [Facultad de Ingenieria Quimica, Santa Fe (Argentina); Schmidt, J.A.; Arce, R.D.; Koropecki, R.R. [INTEC (CONICET-UNL), Santa Fe (Argentina); Facultad de Ingenieria Quimica, Santa Fe (Argentina)

    2009-07-15

    The evolution of FTIR spectra of PS during oxidation is studied in the range 450-1300 cm{sup -1}. We show that the small scale of the PS structure leads to a significant scattering cross section for Froehlich surface modes associated to stretching modes in siloxane bridges. The kinetics of the evolution of both bulk- and surface-related modes are studied using Principal Component Analysis. As a result, two independent components are found, one of them related to TO modes associated to silicon oxide covering large structures and the other one associated to the oxidation of a distribution of prolate ellipsoids with nanoscopic size. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  5. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

    Science.gov (United States)

    Riahi, R.; Derbali, L.; Ouertani, B.; Ezzaouia, H.

    2017-05-01

    This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total reflectivity of NiO/PS samples decreases noticeably comparing to an untreated PS layer due to an enhanced light absorption.

  6. Silicon improves seed germination and alleviates oxidative stress of bud seedlings in tomato under water deficit stress.

    Science.gov (United States)

    Shi, Yu; Zhang, Yi; Yao, Hejin; Wu, Jiawen; Sun, Hao; Gong, Haijun

    2014-05-01

    The beneficial effects of silicon on plant growth and development under drought have been widely reported. However, little information is available on the effects of silicon on seed germination under drought. In this work, the effects of exogenous silicon (0.5 mM) on the seed germination and tolerance performance of tomato (Solanum lycopersicum L.) bud seedlings under water deficit stress simulated by 10% (w/v) polyethylene glycol (PEG-6000) were investigated in four cultivars ('Jinpengchaoguan', 'Zhongza No.9', 'Houpi L402' and 'Oubao318'). The results showed that the seed germination percentage was notably decreased in the four cultivars under water stress, and it was significantly improved by added silicon. Compared with the non-silicon treatment, silicon addition increased the activities of superoxide dismutase (SOD) and catalase (CAT), and decreased the production of superoxide anion (O2·) and hydrogen peroxide (H2O2) in the radicles of bud seedlings under water stress. Addition of silicon decreased the total phenol concentrations in radicles under water stress, which might contribute to the decrease of peroxidase (POD) activity, as observed in the in vivo and in vitro experiments. The decrease of POD activity might contribute to a less accumulation of hydroxyl radical (·OH) under water stress. Silicon addition also decreased the concentrations of malondialdehyde (MDA) in the radicles under stress, indicating decreased lipid peroxidation. These results suggest that exogenous silicon could improve seed germination and alleviate oxidative stress to bud seedling of tomato by enhancing antioxidant defense. The positive effects of silicon observed in a silicon-excluder also suggest the active involvement of silicon in biochemical processes in plants. Copyright © 2014 Elsevier Masson SAS. All rights reserved.

  7. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  8. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie

    2018-02-21

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.

  9. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2012-01-01

    Highlights: ► Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. ► An efficient surface passivation can be obtained after thermal treatment of obtained films. ► Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 °C. Vanadium pentoxide (V 2 O 5 ) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 °C and 800 °C, under O 2 atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  10. Electro-oxidation of organic fuels catalyzed by ultrasmall silicon nanoparticles

    Science.gov (United States)

    Choi, Yongki; Wang, Gang; Nayfeh, Munir H.; Yau, Siu-Tung

    2008-10-01

    Ultrasmall colloidal silicon nanoparticles behave as electrocatalysts for the oxidation of ethanol, methanol, and glucose. Electrochemical characterization of particle-immobilized electrodes shows a catalytic onset between -0.4 and 0 V versus Ag/AgCl at neutral pH. The onset potential and the catalytic strength are dependent on the particle size. A prototype hybrid biofuel cell was constructed, using the particles as the anode catalyst. The catalytic activity undergoes a 50-fold increase under alkaline condition compared to that under acidic condition. An unexpected light dependence of the catalytic current was observed. A significant increase in the catalytic current is obtained when the catalysis is performed in darkness.

  11. Optical study of planar waveguides based on oxidized porous silicon impregnated with laser dyes

    Energy Technology Data Exchange (ETDEWEB)

    Chouket, A. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT-6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)], E-mail: habib.elhouichet@fst.rnu.tn; Oueslati, M. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)

    2009-05-15

    Oxidized porous silicon optical planar waveguides were elaborated and impregnated with rhodamine B and rhodamine 6G. The waveguiding, absorption, and photoluminescence properties of these impregnated waveguides were studied. Successful impregnation of the structure with laser dyes is shown from photoluminescence and reflectivity measurements. Furthermore, the reflectivity spectra prove the homogenous incorporation of both dye molecules inside the pores of the matrices. The refractive indices of waveguide layers were determined before and after dye impregnation to indicate the conservation of guiding conditions. The optical losses in the visible wavelengths are studied as a function of dye concentration. The dye absorption is the main reason for these losses.

  12. Detailed kinetics study of arsenate adsorption by a sequentially precipitated binary oxide of iron and silicon.

    Science.gov (United States)

    Din, Salah Ud; Mahmood, Tahira; Naeem, Abdul; Hamayun, Muhammad; Shah, Noor S

    2017-10-10

    This paper comprises a comprehensive kinetic study for the adsorptive removal of As (V) from aqueous medium by mixed oxide (MO) of iron and silicon. The multi-linearity of the intraparticle diffusion model pointed towards the likelihood of both the pore and film diffusion. The Boyd model validated film diffusion to be the principal mechanism responsible for controlling the rate of the arsenate adsorption on MO. The negative entropy of activation (ΔS # ) suggested the adsorption mechanism to be associative in nature. The non-negative values of ΔG # suggested the presence of an energy barrier to be surmounted for the reaction to occur.

  13. Vacuum-ultraviolet blazed silicon grating anisotropically etched by native-oxide mask.

    Science.gov (United States)

    Sheng, Bin; Xu, Xiangdong; Liu, Ying; Hong, Yilin; Zhou, Hongjun; Huo, Tonglin; Fu, Shaojun

    2009-04-15

    We describe a simple and convenient method of controlling the profile of a blazed grating that consists of using a patterned native-oxide layer of off-cut silicon (111) wafers as the mask of anisotropic etching to maximize the smooth blaze facets of the desired blaze angle and to minimize the deficiencies of the groove apexes. With the blazed-grating profile well controlled by this technique, a 1200 g/mm blazed grating was fabricated that had a blaze angle of 5.0 degrees and smooth blaze facets of about 0.2 nm rms. It was measured to have blaze efficiency in the vacuum-ultraviolet wavelength region.

  14. Soft X-ray spectroscopy of oxide-embedded and functionalized silicon nanocrystals

    International Nuclear Information System (INIS)

    Kelly, Joel A.; Henderson, Eric J.; Hessel, Colin M.; Cavell, Ronald G.; Veinot, Jonathan G.C.

    2010-01-01

    An X-ray absorption spectroscopic investigation into the electronic and optical properties of silicon nanocrystals (Si-NCs) derived from the thermal processing of hydrogen silsesquioxane (HSQ) is presented. Hydrofluoric (HF) acid etching and subsequent photochemical hydrosilylation with styrene liberates the as-synthesized oxide-embedded Si-NCs from their matrix and renders them solution dispersible through the formation of surface Si-C bonds. The impact of this process on the photoluminescence behavior exhibited by these materials has been studied through near edge X-ray absorption fine structure (NEXAFS) and X-ray excited optical luminescence (XEOL) spectroscopies.

  15. Cytotoxic and genotoxic characterization of aluminum and silicon oxide nanoparticles in macrophages.

    Science.gov (United States)

    Hashimoto, Masanori; Imazato, Satoshi

    2015-05-01

    Although aluminum oxide and silicon oxide nanoparticles are currently available as dental materials, there is a lack of basic information concerning their biocompatibility. This study evaluates the biological responses of cultured macrophages (RAW264) to aluminum oxide (Al2O3NPs) and silicon oxide nanoparticles (SiO2NPs) by analyzing cytotoxicity and genotoxicity. The nanoparticles are amorphous and spherical, with diameters of 13 nm for the Al2O3NPs and 12 nm for the SiO2NPs. The cultured RAW264 are exposed to the nanoparticles (NPs) and examined for cytotoxicity using the WST-8 cell viability and Hoechst/PI apoptosis assay, for genotoxicity by micronucleus analysis, for changes in nuclear shape (deformed nuclei) and for comet assay using confocal microscopy, and micromorphological analysis is done using scanning and transmission electron microscopes. Nuclei and DNA damage because of exposure to both types of NPs is observed by inmunostaining genotoxicity testing. The cytotoxicity and genotoxicity are well correlated in this study. Numerous NPs are observed as large aggregates in vesicles, but less or nonexistent NP internalization is seen in the nucleus or cytoplasm. These morphological results suggest that a primary cause of cell disruption is the chemical changes of the NPs in the low pH of vesicles (i.e., ionization of Al2O3 or SiO2) for both types of oxide NPs. Although further research on the elution of NP concentrations on cell or tissue activity under simulated clinical conditions is required, NP concentrations over 200 μg/mL are large enough to induce cytotoxic and genotoxic effects to cells. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  16. Development of disposable bulk-modified screen-printed electrode based on bismuth oxide for stripping chronopotentiometric analysis of lead (II) and cadmium (II) in soil and water samples

    Energy Technology Data Exchange (ETDEWEB)

    Kadara, Rashid O. [Cranfield Health, Cranfield University, Silsoe, Bedfordshire MK45 4DT (United Kingdom); School of Science and Technology, Nottingham Trent University, Clifton Campus, Nottinghamshire NG11 8NS (United Kingdom)], E-mail: kayusee2001@yahoo.co.uk; Tothill, Ibtisam E. [Cranfield Health, Cranfield University, Silsoe, Bedfordshire MK45 4DT (United Kingdom)

    2008-08-08

    A bulk-modified screen-printed carbon electrode characterised for metal ion detection is presented. Bismuth oxide (Bi{sub 2}O{sub 3}) was mixed with graphite-carbon ink to obtain the modified electrode. The best composition was 2% Bi{sub 2}O{sub 3} (wt%) in the graphite-carbon ink. The modified electrode with onboard screen-printed carbon counter and silver-silver chloride pseudo-reference electrodes exhibited good performance in the electrochemical measurement of lead (II) and cadmium (II). The electrode displayed excellent linear behaviour in the concentration range examined (20-300 {mu}g L{sup -1}) with limits of detection of 8 and 16 {mu}g L{sup -1} for both lead (II) and cadmium (II), respectively. The analytical utility of the modified electrode was illustrated by the stripping chronopotentiometric determinations of lead (II) in soil extracts and wastewater samples.

  17. Development of disposable bulk-modified screen-printed electrode based on bismuth oxide for stripping chronopotentiometric analysis of lead (II) and cadmium (II) in soil and water samples

    International Nuclear Information System (INIS)

    Kadara, Rashid O.; Tothill, Ibtisam E.

    2008-01-01

    A bulk-modified screen-printed carbon electrode characterised for metal ion detection is presented. Bismuth oxide (Bi 2 O 3 ) was mixed with graphite-carbon ink to obtain the modified electrode. The best composition was 2% Bi 2 O 3 (wt%) in the graphite-carbon ink. The modified electrode with onboard screen-printed carbon counter and silver-silver chloride pseudo-reference electrodes exhibited good performance in the electrochemical measurement of lead (II) and cadmium (II). The electrode displayed excellent linear behaviour in the concentration range examined (20-300 μg L -1 ) with limits of detection of 8 and 16 μg L -1 for both lead (II) and cadmium (II), respectively. The analytical utility of the modified electrode was illustrated by the stripping chronopotentiometric determinations of lead (II) in soil extracts and wastewater samples

  18. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  19. Synergy effects between bismuth molybdate catalyst phases (Bi/Mo from 0.57 to 2) for the selective oxidation of propylene to arcrolein

    DEFF Research Database (Denmark)

    Le, Minh Thang; Well, Willy van; Stoltze, Per

    2005-01-01

    In this work, the synergy effect between different phases of bismuth molybdate catalysts was investigated systematically. The catalysts were prepared by spray drying and had a Bi/Mo atomic between 0.57 and 2. It is found that the synergy effect is only observed in mixtures containing γ......-phase. A mixture with Bi/Mo ratio = 1.3 consisting of γ- and α-phase, exhibits the highest activity. Less homogeneous ‘artificial mixtures’ exhibit reduced synergy effects when compared to homogeneous ‘in situ mixtures’....

  20. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  1. Relaxation of positive charge during bidirectional electric stress on metal-oxide-silicon capacitors

    Science.gov (United States)

    El-Hdiy, A.; Ziane, Dj

    1999-12-01

    Relaxation phenomena of positive charges, created in a metal-oxide-silicon capacitor by bidirectional Fowler-Nordheim electron injections under constant current, have been studied and their kinetics have been quantitatively characterized. After creation, positive charges are neutralized under electron injections at constant current. The gate bias shift caused by the neutralization process has an exponential dependence on time during relaxation irrespective of stress field polarity and stress duration. Analysis of data assuming nonelectron detrapping gives capture cross section values in the range of 3.5-6.7×10-16 to 2.1×10-15 cm2. The compilation of data given in literature and our present results shows that the main responsible defect in the oxide is the amphoteric traps negatively charged near the cathode and positively charged near the anode.

  2. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    International Nuclear Information System (INIS)

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-01-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with 60 Co γ rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics

  3. Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

    Science.gov (United States)

    Shen, Xinmin; Tu, Qunzhang; Deng, Hui; Jiang, Guoliang; He, Xiaohui; Liu, Bin; Yamamura, Kazuya

    2016-04-01

    For effective machining of difficult-to-machine materials, such as reaction-sintered silicon carbide (RS-SiC) and single-crystal 4H silicon carbide (4H-SiC), a novel polishing technique named anodic oxidation polishing was proposed, which combined with the anodic oxidation of substrate and slurry polishing of oxide. By scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM-EDX) observation and atomic force microscopy analysis, both the anodic oxidation behaviors of RS-SiC and 4H-SiC were investigated. Through comparison of the surfaces before and after hydrofluoric acid etching of the oxidized samples by the scanning white light interferometry (SWLI) measurement, the relationships between oxidation depth and oxidation time were obtained, and the calculated oxidation rate for RS-SiC was 5.3 nm/s and that for 4H-SiC was 5.8 nm/s based on the linear Deal-Grove model. Through anodic oxidation polishing of RS-SiC substrate and 4H-SiC substrate, respectively, the surface roughness rms obtained by SWLI was improved to 2.103 nm for RS-SiC and to 0.892 nm for 4H-SiC. Experimental results indicate that anodic oxidation polishing is an effective method for the machining of RS-SiC and 4H-SiC samples, which would improve the process level of SiC substrates and promote the application of SiC products in the fields of optics, ceramics, semiconductors, electronics, and so on.

  4. Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells

    Science.gov (United States)

    Tong, Jingnan; Wan, Yimao; Cui, Jie; Lim, Sean; Song, Ning; Lennon, Alison

    2017-11-01

    Sub-stoichiometric molybdenum oxide (MoOx) films are commonly deposited on crystalline silicon (c-Si) solar cells by thermal evaporation, a process that requires high vacuum and provides limited control of oxide stoichiometry and in consequence limited control of hole transport properties. Here, we report on a method of forming MoOx films on crystalline silicon wafer surfaces by spin-coating hydrogen molybdenum bronze solutions. It is shown that a ∼2.8 nm thick interfacial SiOx layer forms under the spin-coated MoOx films and that the as-deposited MoOx is amorphous and sub-stoichiometric (x = 2.73), with the concentration of oxygen vacancies in the MoOx being able to be reduced by annealing in air. The as-deposited MoOx films show comparable contact resistivity and passivation quality on c-Si wafers to thermally-evaporated MoOx, demonstrating their potential to be an effective hole-selective contact layer for c-Si solar cells and an alternative for thermally-evaporated films.

  5. Preparation and Characterization of Ophthalmic Lens Materials Containing Titanium Silicon Oxide and Silver Nanoparticles.

    Science.gov (United States)

    No, Jung-Won; Kim, Dong-Hyun; Lee, Min-Jae; Kim, Duck-Hyun; Kim, Tae-Hun; Sung, A-Young

    2015-10-01

    Hydrogel ophthalmic lenses containing fluorine-substituted aniline group, titanium silicon oxide nartoparticles, and silver nanoparticles were copolymerized, and the physical and optical properties of the hydrogel lenses were measured. To produce the hydrophilic ophthalmic lenses, the additives were added to the mixture containing HEMA, NVP, MA, EGDMA, and AIBN. The cast mold method was used for the manufacture of the hydrogel ophthalmic lenses, and the produced lenses were completely soaked in a 0.9% NaCl normal saline solution for 24 hours for hydration. The physical properties of the produced macromolecule showed that the water content was 32.5-37.6%, the refractive index was 1.450-1.464, the UV-B transmittance was 0.5-35.2%, and the contact angle was between 56 and 69°. Also, the addition of aniline, titanium silicon oxide, and silver nanoparticles allowed the ophthalmic lenses to block UV. These results show that the produced macromolecule can be used as hydrophilic lenses for ophthalmologic purposes that can block UV.

  6. THORIUM DISPERSION IN BISMUTH

    Science.gov (United States)

    Bryner, J.S.

    1961-07-01

    The growth of thorium bismutaide particles, which are formed when thorium is suspended in liquid bismuth, is inhibited when the liquid metal suspension is being flowed through a reactor and through a heat exchanger in sequence. It involves the addition of as little as 1 part by weight of tellurium to 100 parts of thorium. This addition is sufficient to inhibit particle growth and agglomeration.

  7. Poisoning effect of bismuth on modification behaviour of strontium in LM25 alloy

    International Nuclear Information System (INIS)

    Farahany, S.; Ourdjini, A.; Idris, M.H.; Thai, L.T.

    2011-01-01

    Nucleation and growth, temperature measurements and microstructure observations of silicon phase are presented for strontium modified Al-7% Si (LM25) cast alloy treated with bismuth. The results show that addition of bismuth in strontium modified alloys may have a poisoning effect resulting in lost modification of the silicon phase. With increasing Bi/Sr ratio, thermal analysis measurements showed that the eutectic growth temperature increased remarkably to 573 deg C and recalescence decreased to 0.2 deg C and the morphology of silicon displayed the same flake-like structure as in the unmodified alloys. Microstructural observation showed that a minimum Bi/Sr ratio of 1.2 which is equivalent to a Sr/Bi ratio of 0.43 is required for effective strontium modification and neutralization of the poisoning effect of bismuth. (author)

  8. Bismuth toxicity in patients treated with bismuth iodoform paraffin packs.

    Science.gov (United States)

    Atwal, A; Cousin, G C S

    2016-01-01

    Bismuth is a heavy metal used in bismuth iodoform paraffin paste (BIPP) antiseptic dressings and in a number of other medical preparations. It can be absorbed systemically and cause toxicity. We report 2 cases of such neurotoxicity after it was used in operations on the jaws. Copyright © 2015. Published by Elsevier Ltd.

  9. Tribochemistry of Bismuth and Bismuth Salts for Solid Lubrication

    NARCIS (Netherlands)

    Gonzalez Rodriguez, P.; van den Nieuwenhuijzen, Karin Jacqueline Huberta; Lette, W.; Schipper, Dirk J.; ten Elshof, Johan E.

    2016-01-01

    One of the main trends in the past decades is the reduction of wastage and the replacement of toxic compounds in industrial processes. Some soft metallic particles can be used as nontoxic solid lubricants in high-temperature processes. The behavior of bismuth metal particles, bismuth sulfide

  10. Novel Size and Surface Oxide Effects in Silicon Nanowires as Lithium Battery Anodes

    KAUST Repository

    McDowell, Matthew T.

    2011-09-14

    With its high specific capacity, silicon is a promising anode material for high-energy lithium-ion batteries, but volume expansion and fracture during lithium reaction have prevented implementation. Si nanostructures have shown resistance to fracture during cycling, but the critical effects of nanostructure size and native surface oxide on volume expansion and cycling performance are not understood. Here, we use an ex situ transmission electron microscopy technique to observe the same Si nanowires before and after lithiation and have discovered the impacts of size and surface oxide on volume expansion. For nanowires with native SiO2, the surface oxide can suppress the volume expansion during lithiation for nanowires with diameters <∼50 nm. Finite element modeling shows that the oxide layer can induce compressive hydrostatic stress that could act to limit the extent of lithiation. The understanding developed herein of how volume expansion and extent of lithiation can depend on nanomaterial structure is important for the improvement of Si-based anodes. © 2011 American Chemical Society.

  11. Synthesis of Bioactive Three-dimensional Silicon-oxide Nanofibrous Structures on the Silicon Substrate for Bionic Devices’ Fabrication

    Directory of Open Access Journals (Sweden)

    Candace Colpitts

    2016-02-01

    Full Text Available Bionic devices are implants that replace biological functions that have been lost due to damaged or lost tissue. The challenge of this area is to find the appropriate materials to match the biocompatible criteria with the same mechanical and electrical performance. In this research, a new method is introduced for the enhance‐ ment of silicon biocompatibility by fabrication of a 3D nanofibrous layer on the silicon surface, induced by nanosecond laser pulses at a high repetition rate and power. It was found that the laser treatment with small‐ er line spacing and a higher overlap number enhanced the biocompatibility of silicon. The results display a promis‐ ing improvement in the biocompatibility of silicon for the production of biomedical devices such as sensors, bio- MEMS and nano-biomaterial fabrications.

  12. Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

    International Nuclear Information System (INIS)

    Kim, Y.Y.; Lenahan, P.M.

    1988-01-01

    We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO 2 structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO 2 structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b/ 0 defect, is generated in large numbers by ionizing radiation

  13. Fabrication, strength and oxidation of molybdenum-silicon-boron alloys from reaction synthesis

    Science.gov (United States)

    Middlemas, Michael Robert

    Mo-Si-B alloys are a leading candidate for the next generation of jet turbine engine blades and have the potential to raise the operating temperatures by 300-400°C, which would dramatically increase power and efficiency. The alloys of interest are a three-phase mixture of the molybdenum solid solution (Moss) and two intermetallic phases, Mo3Si (A15) and Mo5SiB2 (T2). A novel powder metallurgical method was developed which uses the reaction of molybdenum, silicon nitride (Si3N4) and boron nitride (BN) powders to synthesize a fine dispersion of the intermetallic phases in a Moss matrix. The covalent nitrides are stable in oxidizing environments up to 1000ºC, allowing for fine particle processing without the formation of silicon and boron oxides. The process developed uses standard powder processing techniques to create Mo-Si-B alloys in a less complex and expensive manner than previously demonstrated. The formation of the intermetallic phases was examined by thermo-gravimetric analysis and x-ray diffraction. The start of the reactions to form the T2 and A15 phases were observed at 1140°C and 1193°C and the reactions have been demonstrated to be complete in as little as two hours at 1300°C. This powder metallurgy approach yields a fine dispersion of intermetallics in the Moss matrix, with average grain sizes of 2-4mum. Densities up to 95% of theoretical were attained from pressureless sintering at 1600°C and full theoretical density was achieved by hot-isostatic pressing (HIP). Low temperature sintering and HIPing was attempted to limit grain growth and to reduce the equilibrium silicon concentration in the Moss matrix. Sintering and HIPing at 1300°C reduced the grain sizes of all three phases by over a factor of two. Powder metallurgy provides an opportunity for microstructure control through changes in raw materials and processing parameters. Microstructure examination by electron back-scatter diffraction (EBSD) imaging was used to precisely define the

  14. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  15. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  16. Micro- and Nanopatterning of Functional Organic Monolayers on Oxide-Free Silicon by Laser-Induced Photothermal Desorption

    NARCIS (Netherlands)

    Scheres, L.; Klingebiel, B.; Maat, ter J.; Giesbers, M.; Jong, de J.H.S.G.M.; Hartmann, N.; Zuilhof, H.

    2010-01-01

    The photothermal laser patterning of functional organic monolayers, prepared on oxide-free hydrogen-terminated silicon, and subsequent backfilling of the laser-written lines with a second organic monolayer that differs in its terminal functionality, is described. Since the thermal monolayer

  17. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  18. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    International Nuclear Information System (INIS)

    Allen, T. G.; Cuevas, A.

    2014-01-01

    This paper proposes the application of gallium oxide (Ga 2 O 3 ) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga 2 O 3 films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O 3 ) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga 2 O 3 interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  19. Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.

    Science.gov (United States)

    Zarudnyi, Konstantin; Mehonic, Adnan; Montesi, Luca; Buckwell, Mark; Hudziak, Stephen; Kenyon, Anthony J

    2018-01-01

    Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such behavior, and one example of several classes of plasticity that are being examined with the aim of finding suitable algorithms for application in many computing tasks such as coincidence detection, classification and image recognition. In previous work we have demonstrated that the neuromorphic capabilities of silicon-rich silicon oxide (SiO x ) resistance switching devices extend beyond plasticity to include thresholding, spiking, and integration. We previously demonstrated such behaviors in devices operated in the unipolar mode, opening up the question of whether we could add plasticity to the list of features exhibited by our devices. Here we demonstrate clear STDP in unipolar devices. Significantly, we show that the response of our devices is broadly similar to that of biological synapses. This work further reinforces the potential of simple two-terminal RRAM devices to mimic neuronal functionality in hardware spiking neural networks.

  20. Ion microprobe study of the scale formed during high temperature oxidation of high silicon EN-1.4301 stainless steel

    International Nuclear Information System (INIS)

    Paul, A.; Elmrabet, S.; Alves, L.C.; Silva, M.F. da; Soares, J.C.; Odriozola, J.A.

    2001-01-01

    A study of the oxide layer formed on the surface of high silicon (0.8%) EN-1.4301 (AISI-304) stainless steel after 125 h oxidation in air at 1273 K has been performed by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), RBS and proton microprobe. Oxidation experiments in synthetic air were performed in a thermobalance and the kinetic curve is compared to that of a standard EN-1.4301 austenitic stainless steel. These results show that the high silicon steel presents an enhanced oxidation resistance. XRD experiments show that the only crystalline species present in the scale is Cr 2 O 3 . Nevertheless, transversal section studies of the scale using proton microprobe show the development of a multilayered scale formed by an amorphous silicon rich layer in the scale to alloy interface and a Cr 2 O 3 oxide layer in the external scale. Those results are confirmed by SEM experiments. The formation of the silica layer can be the responsible of the increase in the resistance to high temperature oxidation in this steel

  1. Ion microprobe study of the scale formed during high temperature oxidation of high silicon EN-1.4301 stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Paul, A. E-mail: momo@itn1.itn.pt; Elmrabet, S.; Alves, L.C.; Silva, M.F. da; Soares, J.C.; Odriozola, J.A

    2001-07-01

    A study of the oxide layer formed on the surface of high silicon (0.8%) EN-1.4301 (AISI-304) stainless steel after 125 h oxidation in air at 1273 K has been performed by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), RBS and proton microprobe. Oxidation experiments in synthetic air were performed in a thermobalance and the kinetic curve is compared to that of a standard EN-1.4301 austenitic stainless steel. These results show that the high silicon steel presents an enhanced oxidation resistance. XRD experiments show that the only crystalline species present in the scale is Cr{sub 2}O{sub 3}. Nevertheless, transversal section studies of the scale using proton microprobe show the development of a multilayered scale formed by an amorphous silicon rich layer in the scale to alloy interface and a Cr{sub 2}O{sub 3} oxide layer in the external scale. Those results are confirmed by SEM experiments. The formation of the silica layer can be the responsible of the increase in the resistance to high temperature oxidation in this steel.

  2. Ion microprobe study of the scale formed during high temperature oxidation of high silicon EN-1.4301 stainless steel

    Science.gov (United States)

    Paúl, A.; Elmrabet, S.; Alves, L. C.; da Silva, M. F.; Soares, J. C.; Odriozola, J. A.

    2001-07-01

    A study of the oxide layer formed on the surface of high silicon (0.8%) EN-1.4301 (AISI-304) stainless steel after 125 h oxidation in air at 1273 K has been performed by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), RBS and proton microprobe. Oxidation experiments in synthetic air were performed in a thermobalance and the kinetic curve is compared to that of a standard EN-1.4301 austenitic stainless steel. These results show that the high silicon steel presents an enhanced oxidation resistance. XRD experiments show that the only crystalline species present in the scale is Cr 2O 3. Nevertheless, transversal section studies of the scale using proton microprobe show the development of a multilayered scale formed by an amorphous silicon rich layer in the scale to alloy interface and a Cr 2O 3 oxide layer in the external scale. Those results are confirmed by SEM experiments. The formation of the silica layer can be the responsible of the increase in the resistance to high temperature oxidation in this steel.

  3. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  4. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  5. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    Science.gov (United States)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  6. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  7. A multilayered silicon-reduced graphene oxide electrode for high performance lithium-ion batteries.

    Science.gov (United States)

    Gao, Xianfeng; Li, Jianyang; Xie, Yuanyuan; Guan, Dongsheng; Yuan, Chris

    2015-04-22

    A multilayered structural silicon-reduced graphene oxide electrode with superior electrochemical performance was synthesized from bulk Si particles through inexpensive electroless etching and graphene self-encapsulating approach. The prepared composite electrode presents a stable charge-discharge performance with high rate, showing a reversible capacity of 2787 mAh g(-1) at a charging rate of 100 mA g(-1), and a stable capacity over 1000 mAh g(-1) was retained at 1 A g(-1) after 50 cycles with a high columbic efficiency of 99% during the whole cycling process. This superior performance can be attributed to its novel multilayered structure with porous Si particles encapsulated, which can effectively accommodate the large volume change during the lithiation process and provide increased electrical conductivity. This facile low-cost approach offers a promising route to develop an optimized carbon encapsulated Si electrode for future industrial applications.

  8. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  9. Plasma surface oxidation of 316L stainless steel for improving adhesion strength of silicone rubber coating to metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Latifi, Afrooz, E-mail: afroozlatifi@yahoo.com [Department of Biomaterials, Biomedical Engineering Faculty, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Imani, Mohammad [Novel Drug Delivery Systems Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/115, Tehran (Iran, Islamic Republic of); Khorasani, Mohammad Taghi [Biomaterials Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/159, Tehran (Iran, Islamic Republic of); Daliri Joupari, Morteza [Animal and Marine Biotechnology Dept., National Institute of Genetic Engineering and Biotechnology, P.O. Box 14965/161, Tehran (Iran, Islamic Republic of)

    2014-11-30

    Highlights: • Stainless steel 316L was surface modified by plasma surface oxidation (PSO) and silicone rubber (SR) coating. • On the PSO substrates, concentration of oxide species was increased ca. 2.5 times comparing to non-PSO substrates. • The surface wettability was improved to 12.5°, in terms of water contact angle, after PSO. • Adhesion strength of SR coating on the PSO substrates was improved by more than two times comparing to non-PSO ones. • After pull-off test, the fractured area patterns for SR coating were dependent on the type of surface modifications received. - Abstract: Stainless steel 316L is one of the most widely used materials for fabricating of biomedical devices hence, improving its surface properties is still of great interest and challenging in biomaterial sciences. Plasma oxidation, in comparison to the conventional chemical or mechanical methods, is one of the most efficient methods recently used for surface treatment of biomaterials. Here, stainless steel specimens were surface oxidized by radio-frequency plasma irradiation operating at 34 MHz under pure oxygen atmosphere. Surface chemical composition of the samples was significantly changed after plasma oxidation by appearance of the chromium and iron oxides on the plasma-oxidized surface. A wettable surface, possessing high surface energy (83.19 mN m{sup −1}), was observed after plasma oxidation. Upon completion of the surface modification process, silicone rubber was spray coated on the plasma-treated stainless steel surface. Morphology of the silicone rubber coating was investigated by scanning electron microscopy (SEM). A uniform coating was formed on the oxidized surface with no delamination at polymer–metal interface. Pull-off tests showed the lowest adhesion strength of coating to substrate (0.12 MPa) for untreated specimens and the highest (0.89 MPa) for plasma-oxidized ones.

  10. Oxidation and crystallization behavior of calcium europium silicon nitride thin films during rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Jong, M. de, E-mail: m.dejong-1@tudelft.nl [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Enter, V.E. van, E-mail: vvanenter@gmail.com [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands); Schuring, E.W., E-mail: schuring@ecn.nl [Energy Center of the Netherlands, Westerduinweg 3, 1755LE Petten (Netherlands); Kolk, E. van der, E-mail: e.vanderkolk@tudelft.nl [Faculty of Applied Science, Delft University of Technology, Mekelweg 15, 2629JB Delft (Netherlands)

    2016-03-31

    Luminescent thin films were fabricated on silicon wafers using reactive magnetron sputtering of Ca, Si and Eu in Ar/N{sub 2} atmosphere. In order to activate the luminescence, the as-deposited nitride films were heated to 1100 °C by a rapid thermal processing treatment. X-ray diffraction measurements reveal the crystal phases that form during thermal treatment. By recording scanning electron microscopy images of the surface and the cross-section of the film at different radial locations, the formation of different layers with a thickness depending on the radial position is revealed. Energy dispersive x-ray spectroscopy analysis of these cross-sections reveals the formation of an oxide top layer and a nitride bottom layer. The thickness of the top layer increases as a function of radial position on the substrate and the thickness of the bottom layer decreases accordingly. The observation of different 4f{sup 6}5d{sup 1} → 4f{sup 7} Eu{sup 2+} luminescence emission bands at different radial positions correspond to divalent Eu doped Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, Ca{sub 2}SiO{sub 4} and CaSiO{sub 3}, which is in agreement with the phases identified by X-ray diffraction analysis. A mechanism for the observed oxidation process of the nitride films is proposed that consists of a stepwise oxidation from the as-deposited amorphous nitride state to crystalline Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, to Ca{sub 2}SiO{sub 4} and finally CaSiO{sub 3}. The oxidation rate and final state of oxidation show a strong temperature–time dependency during anneal treatment. - Highlights: • A thin film of nitridated Ca, Si and Eu was deposited using magnetron sputtering. • Rapid thermal processing (RTP) results in Eu{sup 2+} doped Ca{sub 3}Si{sub 2}O{sub 4}N{sub 2}, Ca{sub 2}SiO{sub 4}, and CaSiO{sub 3}. • Oxidation rate differs with radial position due to a temperature gradient during RTP. • Cross-section SEM–EDX shows how the oxidation progresses in lateral direction.

  11. A guide to the influence of bismuth on lead/acid battery performance

    Science.gov (United States)

    Koop, M. J.; Rand, D. A. J.; Culpin, B.

    A review is given of the literature that deals with the influence of bismuth on the microstructure, oxygen/hydrogen evolution kinetics and anodic corrosion of lead and lead alloys with regard to their performance in lead/acid batteries. Analysis shows that there is considerable disagreement as to the effect of bismuth on lead microstructure. For example, the various investigators report an increase, a decrease, or negligible change in grain size. In general, it is concluded that the oxygen overpotential on PbO 2 is lowered in the presence of bismuth. The effect is enhanced as the bismuth content is increased. It is postulated that the behaviour results from the formation of a mixed oxide, PbO 2·BiO x. By contrast, cathodic hydrogen evolution is reported widely to be largely unaffected by bismuth. Nevertheless, there is evidence that the reaction is particularly sensitive to the surface characteristics of electrodes and that these features can induce either a suppression or an enhancement of the hydrogen-gassing rate. Many studies have shown that bismuth accelerates the anodic corrosion of lead alloys, especially at high concentrations of bismuth. At 0.1 wt.% bismuth and below, the effect on the corrosion rate is negligible. The authors of this discussion are of the opinion that much of the conflicting evidence in the areas reported is caused by spurious differences in grain structure that are introduced by variations in sample preparation, rather than by the action of bismuth itself. In battery-related tests, bismuth has usually been found to exert little influence on performance, but there is some suggestion that cycle life is increased. The present body of knowledge is insufficient to confirm the correctness of any currently specified maximum level for bismuth with respect to a given battery design.

  12. Low-temperature vapour-liquid-solid (VLS) growth of vertically aligned silicon oxide nanowires using concurrent ion bombardment

    Science.gov (United States)

    Bettge, Martin; MacLaren, Scott; Burdin, Steve; Wen, Jian-Guo; Abraham, Daniel; Petrov, Ivan; Sammann, Ernie

    2009-03-01

    Vertically aligned silicon oxide nanowires can be synthesized over a large area by a low-temperature, ion-enhanced, reactive vapour-liquid-solid (VLS) method. Synthesis of these randomly ordered arrays begins with a thin indium film deposited on a Si or SiO2 surface. At the processing temperature of 190 °C, the indium film becomes a self-organized seed layer of molten droplets, receiving atomic silicon from a DC magnetron sputtering source rather than from the gaseous precursors used in conventional VLS growth. Simultaneous vigorous ion bombardment aligns the objects vertically and expedites mixing of oxygen and silicon into the indium. Silicon oxide precipitates from each droplet in the form of multiple thin strands having diameters as small as 5 nm. These strands form a single loose bundle growing normal to the surface, eventually consolidating to form one nanowire. The vertical rate of growth can reach 300 nm min-1 in an environment containing argon, hydrogen, and traces of water vapour. This paper discusses the physical and chemical factors leading to the formation of the nanostructures. It also demonstrates how the shape of the resulting nanostructures can be further controlled by sputtering, during both VLS growth and post-VLS processing. Key technological advantages of the developed process are nanowire growth at low substrate temperatures and the ability to form aligned nanostructure arrays, without the use of lithography or templates, on any substrate onto which a thin silicon film can be deposited.

  13. Dendrimer patterning and electrochemical deposition of thin metal films atop dendrimer-mediated silicon oxide

    Science.gov (United States)

    Arrington, David Lavoe

    2008-04-01

    Microcontact printing is an effective method for creating patterns of molecules onto a surface. Patterned deposition of poly(amidoamine) (PAMAM) dendrimer multilayers onto silicon oxide surfaces are reported herein. Data analysis shows a correlation between dendrimer ink concentration and dendrimer film thickness. Thicker patterns can be achieved by using a more concentrated dendrimer solution. Multilayer structures are stable with respect to sonication and solvent rinsing. Monolayer patterns can be maintained with little degradation in the absence of water. The long-term stability of both monolayer patterns and multilayer patterns is discussed within. Multilayer PAMAM films can be constructed by reacting the surface-bound dendrimer with a co-polymer known as Gantrez. Alternating layers of PAMAM/Gantrez can be achieved, and the resulting films are stable over time. Another approach to constructing multilayer PAMAM films lies in the inclusion of copper ions. The divalent copper ion serves a coupler between adjacent layers of PAMAM. Other reports have illustrated the dendrimer's use as a template for creating metal nanoparticles. In this dissertation, the addition of UV radiation appears to accelerate the rate at which ions are reduced to metal, specifically copper. X-ray photoelectron spectroscopy provides evidence of metallic copper with and without UV irradiation, but the amount of metallic copper detected when using irradiation is significantly greater. The relationship between rate of metal reduction and irradiation time is discussed. Adherent copper films have been electrochemically grown onto PAMAM dendrimer-mediated silicon oxide surfaces. Metallic copper is grown at nucleation sites, associated with adsorbed dendrimers, and films can be observed above a metal thickness of about 2.5 mum. Higher coverage and increased adhesion were observed upon employing galvanostatic control of the deposition process. It is hypothesized that reduction of Cu+2 ions through

  14. Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

    Science.gov (United States)

    Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Yu Yu; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Strugovshchikov, E.; Mamedov, D.; Pishtshev, A.; Karazhanov, S. Zh

    2018-05-01

    We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma flux expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and a SiO2/Si (0 0 1) sample. The laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with a YAG:Nd3  +  laser having a pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. The depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of x-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy methods. Analysis of the chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on the local concentration of thorium atoms, the experimentally established band gaps were located in the range 6.0–9.0 eV. Theoretical studies of the optical properties of the SiO2 and ThO2 crystalline systems were performed by ab initio calculations within hybrid functional. The optical properties of the SiO2/ThO2 composite were interpreted on the basis of the Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in ‘hot’ laser plasma at the early stages of expansion was performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in a 229Th isotope with energy of 7.8 +/- 0.5 eV.

  15. Plasma surface oxidation of 316L stainless steel for improving adhesion strength of silicone rubber coating to metal substrate

    Science.gov (United States)

    Latifi, Afrooz; Imani, Mohammad; Khorasani, Mohammad Taghi; Daliri Joupari, Morteza

    2014-11-01

    Stainless steel 316L is one of the most widely used materials for fabricating of biomedical devices hence, improving its surface properties is still of great interest and challenging in biomaterial sciences. Plasma oxidation, in comparison to the conventional chemical or mechanical methods, is one of the most efficient methods recently used for surface treatment of biomaterials. Here, stainless steel specimens were surface oxidized by radio-frequency plasma irradiation operating at 34 MHz under pure oxygen atmosphere. Surface chemical composition of the samples was significantly changed after plasma oxidation by appearance of the chromium and iron oxides on the plasma-oxidized surface. A wettable surface, possessing high surface energy (83.19 mN m-1), was observed after plasma oxidation. Upon completion of the surface modification process, silicone rubber was spray coated on the plasma-treated stainless steel surface. Morphology of the silicone rubber coating was investigated by scanning electron microscopy (SEM). A uniform coating was formed on the oxidized surface with no delamination at polymer-metal interface. Pull-off tests showed the lowest adhesion strength of coating to substrate (0.12 MPa) for untreated specimens and the highest (0.89 MPa) for plasma-oxidized ones.

  16. Study on corrosion test techniques in lead bismuth eutectic flow. Joint research report in JFY2002

    International Nuclear Information System (INIS)

    Takahashi, Minoru; Sekimoto, Hiroshi

    2003-03-01

    The evaluation of corrosion behaviors of core and structural materials in lead bismuth eutectic is one of the key issues for the utilization of lead bismuth eutectic as a coolant of the primary loops of lead bismuth cooled fast breeder reactors (FBRs) and the intermediate heat transport media of new-type steam generators of the sodium cooled FBRs. The purpose of the present study is to establish corrosion test techniques in lead bismuth eutectic flow. The techniques of steel corrosion test and oxygen control in flowing lead bismuth eutectic, and the technologies of a lead bismuth flow test at high temperature and high velocity were developed through corrosion test using a lead bismuth flow test loop of the Tokyo Institute of Technology in JFY2002. The major results are summarized as follows: (1) Techniques of fabrication, mount and rinse of corrosion specimens, measurement method of weight loss, and SEM/EDX analysis method have been established through lead bismuth corrosion test. (2) Weight losses were measured, corrosion and lead bismuth-adhered layers and eroded parts were observed in two 1000 hr-corrosion tests, and the results were compared with each other for twelve existing steels including ODS, F82H and SUH-3. (3) An oxygen sensor made of zirconia electrolyte structurally resistant to thermal stress and thermal shock was developed and tested in the lead bismuth flow loop. Good performance has been obtained. (4) An oxygen control method by injecting argon and hydrogen mixture gas containing steam into lead bismuth was applied to the lead bismuth flow loop, and technical issues for the development of the oxygen control method were extracted. (5) Technical measures for freezing and leakage of lead bismuth in the flow loop were accumulated. (6) Technical measures for flow rate decrease/blockage due to precipitation of oxide and corrosion products in a low temperature section of the lead bismuth flow loop were accumulated. (7) Electromagnetic flow meters with MI

  17. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    Science.gov (United States)

    Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

    2011-12-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  18. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    International Nuclear Information System (INIS)

    Koch, F; Brinkmann, J; Lindig, S; Mishra, T P; Linsmeier, Ch

    2011-01-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  19. Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

    Science.gov (United States)

    Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

    2018-01-01

    The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

  20. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  1. Adsorption and condensation of bismuth on tungsten

    International Nuclear Information System (INIS)

    Radon, T.; Sidorski, Z.

    1979-01-01

    The bismuth-tungsten system was studied by means of field emission microscopy. The average work function changes induced by the bismuth adsorption were measured for different amounts of adsorbed bismuth. It was found that the adsorption of bismuth changes the work function of tungsten only slightly. The penetration of bismuth into the tungsten substrate was observed. The growth of bismuth single crystals was studied when bismuth was deposited with a rate of about 6 monolayers per minute onto the tungsten substrate and kept at 470 K. Bismuth single crystals with two-fold symmetry occurred most often on the (100) tungsten planes. On the (111) tungsten plane bismuth crystals with three-fold symmetry were observed. An explanation of the observed phenomena is proposed. (Auth.)

  2. Nano crystalline Bi{sub 2}(VO{sub 5}) phases in lithium bismuth borate glasses containing mixed vanadium-nickel oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Arti, E-mail: artidabhur@gmail.com; Khasa, S.; Dahiya, M. S. [Department of Physics, Deenbandhu Chhotu Ram University of Science and Technology, Murthal, India-131039 (India); Agarwal, A. [Department of Applied Physics, G. J. University of Science and Technology, Hisar, India-125001 (India)

    2016-05-23

    Glass composition 7V{sub 2}O{sub 5}·23Li{sub 2}O·20Bi{sub 2}O{sub 3}·50B{sub 2}O{sub 3} and x(2NiO·V{sub 2}O{sub 5})·(30-x)Li{sub 2}O·20Bi{sub 2}O{sub 3}·50B{sub 2}O{sub 3}, x=0, 2, 5, 7 and 10, were produced by conventional melt quenching technique. The quenched amorphous glass samples were annealed at temperatures 400°C and 500°C for 6 hours. The Bi{sub 2}(VO{sub 5}) crystallite were grown in all prepared glass matrix. Tn vanadium lithium bismuth borate glass (annealed), the some phrase of V{sub 2}O{sub 5}-crystal were observed along with the nano crystalline Bi{sub 2}(VO{sub 5}) phase. The sharp peaks in FTTR spectra of all annealed compositions were also compatible with the XRD diffraction peaks of the system under investigation. Average crystalline size (D) of the Bi{sub 2}(VO{sub 5}) nano-crystallite was ~30 nm for samples annealed at 400°C and ~42 nm for samples annealed at 500°C. Lattice parameter and the lattice strain for all the samples was also calculated corresponding to the (113) plane of Bi{sub 2}(VO{sub 5}) crystallite.

  3. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  4. Study of the redox properties of bismuth-molybdate and uranium-antimonate catalysts

    International Nuclear Information System (INIS)

    Paz-Pujalt, G.R.

    1985-01-01

    The oxidation/reduction properties of various bismuth molybdates, molybdenum trioxide, bismuth oxide, uranium antimonate, and iron antimonate have been studied in an effort to correlate them to their catalytic properties. The temperature at which γ-phase bismuth molybdate is prereduced plays an important role in the behavior the catalyst exhibits under reoxidation conditions. The overall behavior of γ-phase bismuth molybdate under catalytic conditions may be divided into two temperature regimes: below 360 0 C the catalyst shows a higher rate of propylene adsorption than product desorption, and above 360 0 C where produced desorption is dominant. This temperature is the same at which the Arrhenius plot for the reaction has a break. Several reduction of γ-bismuth molybdate results in the formation of clusters of bismuth metal and crystallites of molybdenum dioxide. This is irreversible. The reoxidation of the bismuth molybdate catalysts shows the presence of two oxygen incorporation temperatures. The ratios of the areas under these peaks are not the same for the three catalysts. Uranium antimonate shows a lesser degree of lattice oxygen participation. During several reduction the catalyst decomposes partially and an excess of antimony is evident. The isothermal reduction profiles of the catalysts permitted their classification into either of two reduction models: (A) α-, β-, γ-phase bismuth molybdates, molybdenum trioxide, bismuth oxide, and the equimolar mixture follow the nucleation model, (B) uranium antimonate, and iron antimonate following the shrinking sphere model. These models have been correlated to certain characteristics of these catalysts. Group A catalysts show a high degree of lattice oxygen participation (migration of bulk oxygen to surface nuclei). In contrast in group B catalysts only a few layers of oxygen are peeled off during catalysis

  5. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    Science.gov (United States)

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  6. Microarc Oxidation of the High-Silicon Aluminum AK12D Alloy

    Directory of Open Access Journals (Sweden)

    S. K. Kiseleva

    2015-01-01

    Full Text Available The aim of work is to study how the high-silicon aluminum AK12D alloy microstructure and MAO-process modes influence on characteristics (microhardness, porosity and thickness of the oxide layer of formed surface layer.Experimental methods of study:1 MAO processing of AK12D alloy disc-shaped samples. MAO modes features are concentration of electrolyte components – soluble water glass Na2SiO3 and potassium hydroxide (KOH. The content of two components both the soluble water glass and the potassium hydroxide was changed at once, with their concentration ratio remaining constant;2 metallographic analysis of AK12D alloy structure using an optical microscope «Olympus GX51»;3 image analysis of the system "alloy AK12D - MAO - layer" using a scanning electron microscope «JEOL JSM 6490LV»;4 hardness evaluation of the MAO-layers using a micro-hardness tester «Struers Duramin».The porosity, microhardness and thickness of MAO-layer formed on samples with different initial structures are analyzed in detail. Attention is paid to the influence of MAO process modes on the quality layer.It has been proved that the MAO processing allows reaching quality coverage with high microhardness values of 1200-1300HV and thickness up to 114 μm on high-silicon aluminum alloy. It has been found that the initial microstructure of alloy greatly affects the thickness of the MAO - layer. The paper explains the observed effect using the physical principles of MAO process and the nature of silicon particles distribution in the billet volume.It has been shown that increasing concentration of sodium silicate and potassium hydroxide in the electrolyte results in thicker coating and high microhardness.It has been revealed that high microhardness is observed in the thicker MAO-layers.Conclusions:1 The microstructure of aluminum AK12D alloy and concentration of electrolyte components - liquid glass Na2SiO3 and potassium hydroxide affect the quality of coating resulted from MAO

  7. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-01-01

    Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  8. Comparison between transient and frequency modulated excitation: application to silicon nitride and aluminum oxide coatings of silicon.

    Science.gov (United States)

    Klein, D; Ohm, W; Fengler, S; Kunst, M

    2014-06-01

    Contactless measurements of the lifetime of charge carriers are presented with varying ways of photo excitation: with and without bias light and pulsed and frequency modulated. These methods are applied to the study of the surface passivation of single crystalline silicon by a-SiN(x):H and Al2O3 coatings. The properties of these coatings are investigated under consideration of the merits of the different methods.

  9. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    DEFF Research Database (Denmark)

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...

  10. Study of carbon and silicon loss through oxidation in cast iron base metal using rotary furnace for melting

    Directory of Open Access Journals (Sweden)

    Sylvester Olanrewaju OMOLE

    2015-05-01

    Full Text Available The projection of loss of carbon and silicon through oxidation is uncertain phenomenon depending on the furnace used for melting, which affect the carbon equivalent value (CEV of cast iron produced. CEV enhances the fluidity of molten metal as well as having great effects on the mechanical properties of cast products. Study on the way elemental loss takes place during melting with rotary furnace will give idea of approach to minimize the loss. Therefore, the aim of this work is to study the magnitude of the elemental loss with rotary furnace and means to minimize the loss. 60kg of grey cast iron scrap was charged into rotary furnace of 100kg capacity after preheating the furnace for 40 minutes. Graphite and ferrosilicon was added to the charge in order to obtain a theoretical composition of not less than 4.0% carbon and 2.0% silicon. Charges in the furnace were heated to obtain molten metal which was tapped at 1400°C. Tapping was done for casting at three different times. The castings solidified in sand mould and allowed to cool to room temperature in the mould. Castings were denoted as sample 1, 2 and 3. Final compositions of each casting were analyzed with optical light emission spectrometer. Sample 1 has 2.95% carbon and 1.82% silicon. Sample 2 has 2.88% carbon and 1.70% silicon and sample 3 has 2.75% carbon and 1.63% silicon.

  11. Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

    Science.gov (United States)

    Hess, P.; Patzner, P.; Osipov, A. V.; Hu, Z. G.; Lingenfelser, D.; Prunici, P.; Schmohl, A.

    2006-08-01

    VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F II laser) in pure O II and pure H IIO atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.

  12. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    KAUST Repository

    Werner, Jérémie

    2016-12-05

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)

  13. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  14. Corrosion by liquid lead and lead-bismuth: experimental results review and analysis

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jinsuo [Los Alamos National Laboratory

    2008-01-01

    Liquid metal technologies for liquid lead and lead-bismuth alloy are under wide investigation and development for advanced nuclear energy systems and waste transmutation systems. Material corrosion is one of the main issues studied a lot recently in the development of the liquid metal technology. This study reviews corrosion by liquid lead and lead bismuth, including the corrosion mechanisms, corrosion inhibitor and the formation of the protective oxide layer. The available experimental data are analyzed by using a corrosion model in which the oxidation and scale removal are coupled. Based on the model, long-term behaviors of steels in liquid lead and lead-bismuth are predictable. This report provides information for the selection of structural materials for typical nuclear reactor coolant systems when selecting liquid lead or lead bismuth as heat transfer media.

  15. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  16. Preparation and properties of novel epoxy/graphene oxide nanosheets (GON) composites functionalized with flame retardant containing phosphorus and silicon

    International Nuclear Information System (INIS)

    Li, Kuo-Yi; Kuan, Chen-Feng; Kuan, Hsu-Chiang; Chen, Chia-Hsun; Shen, Ming-Yuan; Yang, Jia-Ming; Chiang, Chin-Lung

    2014-01-01

    2-(Diphenylphosphino)ethyltriethoxy silane (DPPES) was grafted onto the surface of graphene oxide nanosheets (GON) via a condensation reaction. X-ray photoelectron spectroscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectroscopy verify that DPPES did not only covalently bond to GON as a functionalization moiety, but partly restored its conjugated structure as a reducing agent. DPPES on graphene sheets oxide was observed by transmission electron microscopy, and contributed to the favorable dispersion of DPPES-GON in nonpolar toluene. Additionally, the flame retardancy and thermal stability of epoxy/DPPES-GON nanocomposites that contain various weight fractions of DPPES-GON were studied using the limiting oxygen index test, UL-94 test and by thermogravimetric analysis in nitrogen. The composites containing 10 wt% DPPES-GON can pass V-0 rating in UL-94 test. Adding 10 wt% DPPES-GON in epoxy greatly increased the char yield and LOI by 42% and 80%, respectively. Epoxy/DPPES-GON nanocomposites with phosphorus, silicon and graphene layer structures were found to exhibit much greater flame retardancy than neat epoxy. The synergistic effects among silicon, phosphorus and GON can improve the flame retardancy of epoxy resin. - Highlights: • Flame retardant was grafted on the surface of graphene oxide nanosheets (GON) by the condensation reaction. • The synergistic effect between silicon, phosphorus and GON improved the flame retardance of epoxy resin. • Epoxy composites have excellent flame retardance at low additive concentrations

  17. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    Energy Technology Data Exchange (ETDEWEB)

    Podhorodecki, A., E-mail: artur.p.podhorodecki@pwr.wroc.pl; Golacki, L. W.; Zatryb, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Wang, J.; Jadwisienczak, W. [School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States); Fedus, K. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Wojcik, J.; Wilson, P. R. J.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  18. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  19. Quantitative differentiation of multiple virus in blood using nanoporous silicon oxide immunosensor and artificial neural network.

    Science.gov (United States)

    Chakraborty, W; Ray, R; Samanta, N; RoyChaudhuri, C

    2017-12-15

    In spite of the rapid developments in various nanosensor technologies, it still remains challenging to realize a reliable ultrasensitive electrical biosensing platform which will be able to detect multiple viruses in blood simultaneously with a fairly high reproducibility without using secondary labels. In this paper, we have reported quantitative differentiation of Hep-B and Hep-C viruses in blood using nanoporous silicon oxide immunosensor array and artificial neural network (ANN). The peak frequency output (f p ) from the steady state sensitivity characteristics and the first cut off frequency (f c ) from the transient characteristics have been considered as inputs to the multilayer ANN. Implementation of several classifier blocks in the ANN architecture and coupling them with both the sensor chips, functionalized with Hep-B and Hep-C antibodies have enabled the quantification of the viruses with an accuracy of around 95% in the range of 0.04fM-1pM and with an accuracy of around 90% beyond 1pM and within 25nM in blood serum. This is the most sensitive report on multiple virus quantification using label free method. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Mesoporous silicon oxide films and their uses as templates in obtaining nanostructured conductive polymers

    Science.gov (United States)

    Salgado, R.; Arteaga, G. C.; Arias, J. M.

    2018-04-01

    Obtaining conductive polymers (CPs) for the manufacture of OLEDs, solar cells, electrochromic devices, sensors, etc., has been possible through the use of electrochemical techniques that allow obtaining films of controlled thickness with positive results in different applications. Current trends point towards the manufacture of nanomaterials, and therefore it is necessary to develop methods that allow obtaining CPs with nanostructured morphology. This is possible by using a porous template to allow the growth of the polymeric materials. However, prior and subsequent treatments are required to separate the material from the template so that it can be evaluated in the applications mentioned above. This is why mesoporous silicon oxide films (template) are essential for the synthesis of nanostructured polymers since both the template and the polymer are obtained on the electrode surface, and therefore it is not necessary to separate the material from the template. Thus, the material can be evaluated directly in the applications mentioned above. The dimensions of the resulting nanostructures will depend on the power, time and technique used for electropolymerization as well as the monomer and the surfactant of the mesoporous film.

  1. Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    Science.gov (United States)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

    2016-02-01

    We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

  2. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

    Science.gov (United States)

    Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

    2017-10-01

    Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

  3. Platelet adhesion and cellular interaction with poly(ethylene oxide) immobilized onto silicone rubber membrane surfaces.

    Science.gov (United States)

    Hsiue, G H; Lee, S D; Chang, P C

    1996-01-01

    Cellular interaction and platelet adsorption were investigated on poly(ethylene oxide) (PEO) immobilized silicone rubber membrane (SR) which has polyacrylic acid grafts on the surfaces. Polyacrylic acid (PAA) had been introduced to the SR surface after Ar plasma treatment of SR surfaces to introduce peroxide groups. Surface characterizations were made using ATR-FTIR, ESCA, SEM, and contact angle measurements. Experimental results obtained by ESCA high resolution curve fitting spectra indicated that the amount of bisamino PEO of different molecular weights immobilized onto SR surfaces were similar, which showed that the influence of the length of molecular chains (-C-C-O-) on the reactivity of terminal amino group is negligible. The wettability of modified SR surfaces increased with an increase in PEO molecular weight. Biological studies such as corneal epithelial cell culture and blood platelet adhesion were performed to understand the biocompatibility of modified SR surfaces. Biological studies using corneal epithelial cells showed that cell migration, attachment and proliferation onto PEO-20000 immobilized SR surface were suppressed, whereas these biological activities on PEO-600 were enhanced. Another study on platelet adhesion revealed that many platelets attached to PEO-600 immobilized SR, while platelet deposition was rarely observed on SR grafted with PEO-3350. The effects of different PEO molecular chains on biological response were discussed.

  4. Aspects of silicone rubber as encapsulant for neurological prostheses. Part 2: Adhesion to binary oxides.

    Science.gov (United States)

    Donaldson, P E; Aylett, B J

    1995-05-01

    The paper presents some measurements of the hydrothermal stability of experimental adhesive joints in water at 100 degrees C. The joints are between one adhesive silicone rubber and ten metal or metal-oxide adherends, all combinations of interest to the neurological prosthesis maker. The probable adhesion mechanism is then considered, in the search for some parameter by which the experimental results could have been predicted. Evidence is produced that physical adsorption plays little or no part in the adhesion, but that hydrothermal stability seems to be a function of the adherend ionic charge. In pursuit of this idea, the valency, the Slater potential and the iso-electric point for the surface (IEPS) of the adherend are examined as possible prediction parameters. It is concluded that, at least in neutral and acidified water, the IEPS is a promising predictor, with the benefit that it is experimentally determinable for adherends of unknown composition. The most stable joints seem to occur when the charge density on the adherend has an optimum negative value.

  5. Aluminum oxide passivated radial junction sub-micrometre pillar array textured silicon solar cells

    Science.gov (United States)

    Pudasaini, Pushpa Raj; Elam, David; Ayon, Arturo A.

    2013-06-01

    We report radial, p-n junction, sub-micrometre, pillar array textured solar cells, fabricated on an n-type Czochralski silicon wafer. Relatively simple processing schemes such as metal-assisted chemical etching and spin on dopant techniques were employed for the fabrication of the proposed solar cells. Atomic layer deposition (ALD) grown aluminum oxide (Al2O3) was employed as a surface passivation layer on the B-doped emitter surface. In spite of the fact that the sub-micrometre pillar array textured surface has a relatively high surface-to-volume ratio, we observed an open circuit voltage (VOC) and a short circuit current density (JSC) as high as 572 mV and 29.9 mA cm-2, respectively, which leads to a power conversion efficiency in excess of 11.30%, for the optimized structure of the solar cell described herein. Broadband omnidirectional antireflection effects along with the light trapping property of the sub-micrometre, pillar array textured surface and the excellent passivation quality of the ALD-grown Al2O3 on the B-doped emitter surface were responsible for the enhanced electrical performance of the proposed solar cells.

  6. The discovery of silicon oxide nanoparticles in space-weathered of Apollo 15 lunar soil grains

    Science.gov (United States)

    Gu, Lixin; Zhang, Bin; Hu, Sen; Noguchi, Takaaki; Hidaka, Hiroshi; Lin, Yangting

    2018-03-01

    Space weathering is an important process on the Moon and other airless celestial bodies. The most common space weathering effects are amorphization of the top surface of soil grains and formation of nanophase iron particles (npFe) within the partially amorphous rims. Hence, space weathering significantly affects optical properties of the surface of the Moon and other airless celestial bodies. Transmission electron microscope (TEM) analysis of Apollo 15 soil grains displays npFe (≤5 nm in size) embedded in the space-weathered rim (∼60 nm in thickness) of a pyroxene grain, consistent with previous studies. In contrast, submicron-sized fragments that adhere to the pyroxene grain show distinct space weathering features. Silicon oxide nanoparticles (npSiOx) were observed with npFe in a submicron-sized Mg-Fe silicate fragment. This is the first discovery of npSiOx as a product of space weathering. The npSiOx and the coexisting npFe are ∼10-25 nm in size, significantly larger than the typical npFe in the space weathered rim of the pyroxene grain. The coexisting npSiOx and npFe were probably formed directly in micrometeorite shock-induced melt, instead of in a solar-wind generated vapor deposit or irradiated rim. This new observation will shed light on space weathering processes on the Moon and airless celestial bodies.

  7. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    Science.gov (United States)

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  8. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    Science.gov (United States)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-12-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  9. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider

    2017-08-15

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.

  10. Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film

    International Nuclear Information System (INIS)

    Lu, Wei-Lun; Kuo, Ting-Wei; Huang, Chun-Hsien; Wang, Na-Fu; Tsai, Yu-Zen; Wang, Ming-Wei; Hung, Chen-I.; Houng, Mau-Phon

    2011-01-01

    In our study, fluorine-doped silicon oxide (SiOF) films were prepared using a mixture of SiH 4 , N 2 O, and CF 4 in a conventional plasma enhanced chemical vapor deposition system at various deposition temperatures. Deposition behaviors are determined by the deposition temperature. Our results show that for temperatures below 300 deg. C the process is surface-reaction-limited controlled, but becomes diffusion-limited when the deposition temperature exceeds 300 deg. C. The surface topography images obtained using an atomic force microscope show that a large amount of free volume space was created in the film with a low temperature deposition. The optical microscope and secondary ion mass spectrometer analyses show that precipitates were produced at the near-surface at the deposition temperature of 150 deg. C with a higher fluorine concentration of 2.97 at.%. Our results show that the properties of the SiOF film are controlled not only by the free volume space but also by the fluorine concentration. An optimal SiOF film prepared at a temperature of 200 deg. C shows a low dielectric constant of 3.55, a leakage current of 1.21 x 10 -8 A/cm 2 at 1 MV/cm, and a fluorine concentration of 2.5 at.%.

  11. Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    F. Severiano

    2017-01-01

    Full Text Available We report the obtaining of electroluminescent devices (ELD from porous silicon (PS and indium doped zinc oxide (ZnO:In junctions. PS presented photoluminescence (PL in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR measurements showed the incorporation of the ZnO:In in the PS structure. Once obtained, the device was optically and electrically characterized. The ELD showed emission in the visible (450–850 nm and infrared region (900–1200 nm where it was electrically polarized. The visible emission was detected as luminescent spots on the surface. Electrical characterization was carried out by current-voltage (I-V curves. The I-V curves showed rectifying behavior. It was related to the quenching of the EL with the process that takes place in the PS when it was immersed in the precursor solution of the ZnO:In.

  12. Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

    Directory of Open Access Journals (Sweden)

    F. Severiano

    2014-01-01

    Full Text Available Electroluminescent devices (ELD based on junctions of indium doped zinc oxide (ZnO:In and porous silicon layers (PSL are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique. Once obtained, this structure was optically and electrically characterized. When the devices were electrically polarized they showed stable electroluminescence (EL which was presented as dots scattered over the surface. These dots can be seen with the naked eye. The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands. The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm. The electrical characterization was carried out by current-voltage curves (I-V which show a rectifying behavior of the devices. Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.

  13. Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si2H6 and NH3

    Science.gov (United States)

    Scheid, Emmanuel; Boyer, Pierre; Samitier, Josep; Hassani, Ahmed

    1994-03-01

    Si2H6/NH3 gas mixture was employed to obtain, by low-pressure chemical vapor deposition (LPCVD) at low temperature, nitrogen-doped silicon (NIDOS) films with various N/Si ratios. Thermal oxide was grown in dry oxygen at 900°C and 1100°C on NIDOS films. The result indicates that the nitrogen content of NIDOS films, assessed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), greatly influences their oxidation rate.

  14. Fabrication of silicon nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-graphene oxide hybrid solar cells

    Science.gov (United States)

    Uma, Kasimayan; Subramani, Thiyagu; Syu, Hong-Jhang; Lin, Tzu-Ching; Lin, Ching-Fuh

    2015-03-01

    Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) Schottky junctions have shown great promise as high efficiency, cost effective solar cells. Here, hybrid SiNWs/PEDOT:PSS blended graphene oxide (GO) solar cells are prepared and investigated. The SiNWs/PEDOT:PSS blended GO cells show enhanced light trapping and a large junction area when compared to pure PEDOT:PSS structures. SiNWs combined with GO solar cells show energy conversion efficiencies of up to 9.57% under the AM 1.5G condition, opening the possibility of using semiconductor/graphene oxide in photovoltaic applications.

  15. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  16. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Jagdale, Pravin; Castellino, Micaela; Marrec, Françoise; Rodil, Sandra E.; Tagliaferro, Alberto

    2014-01-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl 3 ) in acetone (CH 3 -CO-CH 3 ). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  17. Study on ablation behavior of silicone rubber based insulation material under the condition of boron oxide particles erosion

    Science.gov (United States)

    Zha, B. L.; Shi, Y. A.; Wang, J. J.; Su, Q. D.

    2018-01-01

    Self-designed oxygen-kerosene ablation system was employed to study the ablation characteristics of silicone rubber based thermal insulation materials under the condition of boron oxide particles erosion. The ablation test was designed with a mass fraction of 1.69% boron oxide particles and particles-free, the microstructure and elemental analysis of the specimens before and after ablation were carried out by Scanning Electron Microscopy (SEM) and Energy Dispersion Spectrum (EDS). Experiment results show that the average mass ablation rate of the materials was 0.0099 g•s‑1 and the average ablation rate was -0.025 mm•s‑1 under the condition of pure gas phase ablation; and the average mass ablation rate of the multiphase ablation test group was 0.1775 g•s‑1, whose average ablation rate was 0.437 mm•s‑1 during the ablation process, the boron oxide particles would adhere a molten layer on the flame contact surface of the specimen, which covering the pores on the material surface, blocking the infiltration channel for the oxidizing component and slowing down the oxidation loss rate of the material below the surface, but because the particles erosion was the main reason for material depletion, the combined effect of the above both led to the upward material ablation rates of Silicone Rubber.

  18. Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

    International Nuclear Information System (INIS)

    El-Dessouki, M.S.; Galloni, R.

    1987-10-01

    Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

  19. 21 CFR 73.1162 - Bismuth oxychloride.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth oxychloride. 73.1162 Section 73.1162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1162 Bismuth oxychloride. (a) Identity. (1) The color additive bismuth oxychloride is a synthetically prepared white or nearly white amorphous or finely...

  20. 21 CFR 73.2162 - Bismuth oxychloride.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth oxychloride. 73.2162 Section 73.2162 Food... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2162 Bismuth oxychloride. (a) Identity and specifications. (1) The color additive bismuth oxychloride shall conform in identity and specifications to the...

  1. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  2. In Situ Synthesis of Reduced Graphene Oxide-Reinforced Silicone-Acrylate Resin Composite Films Applied in Erosion Resistance

    Directory of Open Access Journals (Sweden)

    Yang Cao

    2015-01-01

    Full Text Available The reduced graphene oxide reinforced silicone-acrylate resin composite films (rGO/SAR composite films were prepared by in situ synthesis method. The structure of rGO/SAR composite films was characterized by Raman spectrum, atomic force microscope, scanning electron microscopy, and thermogravimetric analyzer. The results showed that the rGO were uniformly dispersed in silicone-acrylate resin matrix. Furthermore, the effect of rGO loading on mechanical properties of composite films was investigated by bulge test. A significant enhancement (ca. 290% and 320% in Young’s modulus and yield stress was obtained by adding the rGO to silicone-acrylate resin. At the same time, the adhesive energy between the composite films and metal substrate was also improved to be about 200%. Moreover, the erosion resistance of the composite films was also investigated as function of rGO loading. The rGO had great effect on the erosion resistance of the composite films, in which the Rcorr (ca. 0.8 mm/year of composite film was far lower than that (28.7 mm/year of pure silicone-acrylate resin film. Thus, this approach provides a novel route to investigate mechanical stability of polymer composite films and improve erosion resistance of polymer coating, which are very important to be used in mechanical-corrosion coupling environments.

  3. Comparison of properties in silicon nitrides sintered with oxide and organometallic additives

    International Nuclear Information System (INIS)

    Luxem, W.; Saruhan, B.

    1994-01-01

    An homogeneous introduction of sintering additives to silicon nitride powder compacts is of great importance in the fabrication of high strength silicon nitride ceramics. Inhomogenities and impurities brought into the compacts with addition of sintering additives may influence the microstructure and phase development and subsequently degrade the mechanical properties and reliability of silicon nitride ceramics. Sintering additives in the system of Sm 2 O 3 + Al 2 O 3 as metaloxides and nitrates are introduced to two different kinds of α-silicon nitride powder. Thereby, a more homogeneous distribution of additives through an intimate mixing is aimed. Advantages of this type of processing of silicon nitride powders against conventional method are discussed. The contribution of powder characteristics in determination of these factors are displayed. (orig.)

  4. Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

    Directory of Open Access Journals (Sweden)

    Hua-Wen Liu

    2017-01-01

    Full Text Available The gas barrier property of a silicon oxide (SiOx film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES. Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiOxNy film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m2/day deposited onto the polyethylene terephthalate (PET substrate was thus greatly improved to 0.06 g/m2/day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

  5. Bismuth Passivation Technique for High-Resolution X-Ray Detectors

    Science.gov (United States)

    Chervenak, James; Hess, Larry

    2013-01-01

    The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

  6. Bismuth bronze from machu picchu, peru.

    Science.gov (United States)

    Gordon, R B; Rutledge, J W

    1984-02-10

    The decorative bronze handle of a tumi excavated at the Inca city of Machu Picchu, Peru, contains 18 percent bismuth and appears to be the first known example of the use of bismuth with tin to make bronze. The alloy is not embrittled by the bismuth because the bismuth-rich constituent does not penetrate the grain boundaries of the matrix phase. The use of bismuth facilitates the duplex casting process by which the tumi was made and forms an alloy of unusual color.

  7. Investigation of iron-bismuth-molybdenum catalysts

    International Nuclear Information System (INIS)

    Ven'yaminov, S.A.; Pitaeva, A.N.; Barannik, G.B.; Plyasova, L.M.; Maksimovskaya, R.I.; Kustova, G.N.

    1977-01-01

    Using the methods of roentgenography, derivatography, EPR-and infrared-spectroscopy, the phase composition of an iron-bismut molybdenum system is investigated. It is shown that the method of introducing iron additives substantially affects the phase composition of the system. Interaction of a mixture of bismuth and iron hydroxides with a molybdic acid solution results in the formation of bismuth and iron molybdates. If iron hydroxide reacts with previously synthesized bismuth molybdate, a compound containing bismuth, molybdenum, and iron (the X-phase) is formed in the specimens along with the bismuth and iron molybdates

  8. Magnetotransport investigations of the two-dimensional metallic state in silicon metal-oxid-semiconductor structures

    International Nuclear Information System (INIS)

    Prinz, A.

    2002-03-01

    For more than two decades it was the predominant view among the physical community that the every two-dimensional (2D) disordered electron system becomes insulating as the temperature approaches the absolute zero temperature (0 Kelvin or -273.15 o C). Two-dimensional means that the movement of the charge carriers is confined in one direction by a potential so that the carriers can move freely only perpendicular to the confinement. The most famous physical realization of a 2D system is the silicon metal-oxide-semiconductor field effect transistor (Si-MOSFET). It is one of the basic elements of most electronic devices in our daily life. The working principle is very simple. Charges are attracted to the semiconductor-oxide interface by an electric field applied between the metallic gate and the semiconductor, so that a 2D conductive channel is formed. The charge density can be adjusted by the voltage from zero up to 10 13 cm -2 . In 1994 Kravchenko and coworkers made a very important discovery. They studied high mobility Si-MOSFETs and found that for densities below a certain critical value, nc, the resistivity increases as the temperature is decreased below 2 K, whereas for densities above $n c $ the resistivity decreases unexpectedly. The transition from insulating to metallic behavior, known as metal-insulator transition (MIT), was obviously a contradiction to the commonly accepted theories which predict insulating behavior for any density. The insulating behavior is a consequence of the wave properties of electrons which leads to interference in disordered media and thus to enhanced backscattering. In the subsequent years, experimental studies were performed on a variety of 2D systems, which qualitatively showed a similar behavior. All the investigated samples had one thing in common. The interaction energy between the carriers was considerable higher than their mean kinetic energy due to their movement in the 2D plane. Since the electron-electron interaction was

  9. Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires.

    Science.gov (United States)

    Chong, Su Kong; Dee, Chang Fu; Abdul Rahman, Saadah

    2013-04-17

    Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.

  10. Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Nurul Izni Rusli

    2012-12-01

    Full Text Available The formation of high-density zinc oxide (ZnO nanorods on porous silicon (PS substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn powder in the presence of oxygen (O2 gas was systematically investigated. The high-density growth of ZnO nanorods with (0002 orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnOx seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnOx seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnOx nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnOx clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnOx seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS and vapor-solid (VS mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

  11. Analysis of electronic parameters of nanostructure copper doped cadmium oxide/p-silicon heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Karatas, Suekrue, E-mail: skaratas@ksu.edu.tr [Department of Physics, Faculty of Science, Suetcue Imam University, Karamanmaras (Turkey); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey)

    2012-10-05

    Highlights: Black-Right-Pointing-Pointer The copper doped cadmium oxide (CdO) heterojunction diodes were fabricated by sol-gel method. Black-Right-Pointing-Pointer The electrical properties of Cu doped CdO/p-Si heterojunction diode have been investigated. Black-Right-Pointing-Pointer A strong effect of the Cu-doped content on the I-V characteristics of the diodes was found. Black-Right-Pointing-Pointer It is evaluated that the electrical performance of the CdO/p-Si diode can be controlled by Cu doped. - Abstract: The nanostructure Cu-doped CdO thin film was grown on p-type silicon substrate by sol-gel method. An Al/Cu doped CdO/p-Si heterojunction diode was fabricated. The values of ideality factor and barrier height for the Al/n-type CdO/p-Si heterojunction were obtained as 5.99 and 0.69 eV, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the junction parameters including the ideality factor, barrier height and series resistance. Norde function was compared with the Cheung functions and it is seen that there is a good agreement with both method for the series resistance values. Furthermore, the interface state density (N{sub SS}) as a function of energy distribution (E{sub SS} - E{sub V}) was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height and series resistance.

  12. Soil microbial community responses to contamination with silver, aluminium oxide and silicon dioxide nanoparticles.

    Science.gov (United States)

    McGee, C F; Storey, S; Clipson, N; Doyle, E

    2017-04-01

    Soil microorganisms are key contributors to nutrient cycling and are essential for the maintenance of healthy soils and sustainable agriculture. Although the antimicrobial effects of a broad range of nanoparticulate substances have been characterised in vitro, little is known about the impact of these compounds on microbial communities in environments such as soil. In this study, the effect of three widely used nanoparticulates (silver, silicon dioxide and aluminium oxide) on bacterial and fungal communities in an agricultural pastureland soil was examined in a microcosm-based experiment using a combination of enzyme analysis, molecular fingerprinting and amplicon sequencing. A relatively low concentration of silver nanoparticles (AgNPs) significantly reduced total soil dehydrogenase and urease activity, while Al 2 O 3 and SiO 2 nanoparticles had no effect. Amplicon sequencing revealed substantial shifts in bacterial community composition in soils amended with AgNPs, with significant decreases in the relative abundance of Acidobacteria and Verrucomicrobia and an increase in Proteobacteria. In particular, the relative abundance of the Proteobacterial genus Dyella significantly increased in AgNP amended soil. The effects of Al 2 O 3 and SiO 2 NPs on bacterial community composition were less pronounced. AgNPs significantly reduced bacterial and archaeal amoA gene abundance in soil, with the archaea more susceptible than bacteria. AgNPs also significantly impacted soil fungal community structure, while Al 2 O 3 and SiO 2 NPs had no effect. Several fungal ribotypes increased in soil amended with AgNPs, compared to control soil. This study highlights the need to consider the effects of individual nanoparticles on soil microbial communities when assessing their environmental impact.

  13. Self-cleaning glass coating containing titanium oxide and silicon; Revestimentos autolimpantes para vidros contendo oxido de titanio e silicio

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, A.O. de; Alves, A.K.; Berutti, F.A.; Bergmann, C.P. [Universidade Federal do Rio Grande do Sul (LACER/UFRGS), Porto Alegre, RS (Brazil). Lab. de Materiais Ceramicos

    2009-07-01

    Using the electro spinning technique nano fibers of titanium oxide doped with silicon were synthesized. As precursor materials, titanium propoxide, silicon tetra propoxide and a solution of polyvinylpyrrolidone were used. The non-tissue material obtained was characterized by X-ray diffraction to determine the phase and crystallite size, BET method to determine the surface and SEM to analyze the microstructure of the fibers. After ultrasound dispersion of this material in ethanol, the glass coatings were made by dip-coating methodology. The influence of the removal velocity, the solution composition and the glass surface preparation were evaluated. The film was characterized by the contact angle of a water droplet in its surface. (author)

  14. Synthesis of low-oxide blue luminescent alkyl-functionalized silicon nanoparticles with no nitrogen containing surfactant

    International Nuclear Information System (INIS)

    Thomas, Jason A.; Ashby, Shane P.; Huld, Frederik; Pennycook, Timothy J.; Chao, Yimin

    2015-01-01

    Of ever growing interest in the fields of physical chemistry and materials science, silicon nanoparticles show a great deal of potential. Methods for their synthesis are, however, often hazardous, expensive or otherwise impractical. In the literature, there is a safe, fast and cheap inverse micelle-based method for the production of alkyl-functionalized blue luminescent silicon nanoparticles, which nonetheless found limitations, due to undesirable Si-alkoxy and remaining Si–H functionalization. In the following work, these problems are addressed, whereby an optimisation of the reaction mechanism encourages more desirable capping, and the introduction of alcohol is replaced by the use of anhydrous copper (II) chloride. The resulting particles, when compared with their predecessors through a myriad of spectroscopic techniques, are shown to have greatly reduced levels of ‘undesirable’ capping, with a much lower surface oxide level; whilst also maintaining long-term air stability, strong photoluminescence and high yields

  15. Total platinum concentration and platinum oxidation states in body fluids, tissue, and explants from women exposed to silicone and saline breast implants by IC-ICPMS.

    Science.gov (United States)

    Lykissa, E D; Maharaj, S V M

    2006-05-01

    Ion chromatography-inductively coupled plasma-mass spectrometry was used to determine the total platinum concentration and platinum oxidation states in samples from women exposed to silicone and saline breast implants. Samples included the following: whole blood, urine, hair, nails, sweat, brain tissue, breast milk, and explants. Mean Pt concentration in samples from women exposed to silicone breast implants were as follows: whole blood, 568.1 +/- 74.77 pmol/L (n = 9); urine, 1.77 +/- 0.847 mug/g of creatinine (n = 10); hair, 2.13 +/- 2.984 ng/g (n = 9); nails, 0.88 +/- 0.335 ng/g (n = 9); sweat, 1.90 +/- 1.691 ng/g (n = 9); breast milk, 1.09 +/- 0.316 mug/L (n = 6). Pt in explanted silicone breast implant gel (n = 9) occurred mainly in the +2, +4, and +6 oxidation states. Pt in whole blood (n = 7) and breast milk samples (n = 6) from women exposed to silicone breast implants occurred mainly in the +2 and +4 oxidation states. Saline breast implant fluid (n = 2) did not contain detectable levels of Pt. This is the most comprehensive report, to date, to show that women exposed to silicone breast implants have Pt levels that exceed that of the general population, and the first report, to date, to document the various Pt oxidation states present in samples from women exposed to silicone breast implants.

  16. Controlling the shape and gap width of silicon electrodes using local anodic oxidation and anisotropic TMAH wet etching

    International Nuclear Information System (INIS)

    Rouhi, Jalal; Mahmud, Shahrom; Naderi, Nima; Abdullah, Mat Johar; Hutagalung, Sabar Derita; Kakooei, Saeid

    2012-01-01

    A simple method for fabricating silicon electrodes with various shapes and gap widths was designed using the special properties of anisotropic tetramethylammonium hydroxide (TMAH) wet etching and local anodic oxidation (LAO). A statistical system was used for the optimization of the parameters of the LAO process to facilitate a better understanding and precise analysis of the process. Analyses of the interaction effects among the significant factors of LAO showed that the relative humidity and applied voltage were interdependent. They had the strongest interaction effect on the dimensions of the oxide mask. TMAH with a concentration of 25% was used as an etchant solution in (1 0 0) silicon with a rectangular oxide mask. The observed undercutting at convex corners, tip shape of emitters and gap widths of electrodes were exactly consistent with theoretical studies. Combination of the LAO method and anisotropic TMAH wet etching was successfully used to fabricate Si nano-gap electrodes. This fabrication method of sharp and round tip emitters was simple, controllable and faster than common techniques. These results indicate that the method can be a new approach for studying the electrical properties of nano-gap electrodes. (paper)

  17. Microwave-induced Bismuth Salts-mediated Synthesis of Molecules of Medicinal Interests.

    Science.gov (United States)

    Bandyopadhyay, Debasish; Chavez, Ashlee; Banik, Bimal K

    2017-01-01

    Bismuth salts-mediated reactions have become a powerful tool for the synthesis of diverse medicinally-significant compounds because of their low-toxicity (non-toxic) and Lewis acidic capacity. In fact, LD50 of bismuth nitrate is lower than table salt. On the other hand, microwave-induced chemical synthesis is considered as a major greener route in modern chemistry. A total of 139 publications (including a few authentic web links) have been reviewed mainly to discuss bismuth salts-induced electrophilic aromatic substitution, protection-deprotection chemistry of carbonyl compounds, enamination, oxidation, carbohydrate chemistry, hydrolysis, addition-elimination route, Paal-Knorr reaction, Clauson-kaas synthesis, Michael addition, aza-Michael addition, Hantzsch reaction, Biginelli reaction, Ferrier rearrangement, Pechmann condensation, Diels-Alder and aza-Diels- Alder reactions, as well as effects of microwave irradiation in a wide range of chemical transformations. Bismuth salts-mediated reactions are developed for the synthesis of diverse organic molecules of medicinal significance. Reactions conducted with bismuth salts are environmentally benign, economical, rapid and high yielding. Microwave irradiation has accelerated these reactions significantly. It is believed that bismuth salts released corresponding acids in the media during the reaction. However, a coordination of bismuth salt to the electronegative atom is also observed in the NMR study. Bismuth has much less control (less attractive forces) over anions (for example, halides, nitrate, sulfate and triflates) compared to alkali metals. Therefore, it forms weak bond with electronegative atoms more readily and facilitates the reactions significantly. Many products obtained via bismuth salts-mediated reactions are medicinally active or intermediate for the synthesis of biologically active molecules including antifungal, anti-parasitic, anticancer and antibacterial agents, as well as agents to prevent

  18. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  19. Novel processing of bioglass ceramics from silicone resins containing micro- and nano-sized oxide particle fillers.

    Science.gov (United States)

    Fiocco, L; Bernardo, E; Colombo, P; Cacciotti, I; Bianco, A; Bellucci, D; Sola, A; Cannillo, V

    2014-08-01

    Highly porous scaffolds with composition similar to those of 45S5 and 58S bioglasses were successfully produced by an innovative processing method based on preceramic polymers containing micro- and nano-sized fillers. Silica from the decomposition of the silicone resins reacted with the oxides deriving from the fillers, yielding glass ceramic components after heating at 1000°C. Despite the limited mechanical strength, the obtained samples possessed suitable porous architecture and promising biocompatibility and bioactivity characteristics, as testified by preliminary in vitro tests. © 2013 Wiley Periodicals, Inc.

  20. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  1. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  2. Self-Assembly of Silicon@Oxidized Mesocarbon Microbeads Encapsulated in Carbon as Anode Material for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Huitian; Shan, Zhongqiang; Huang, Wenlong; Wang, Dongdong; Lin, Zejing; Cao, Zongjie; Chen, Peng; Meng, Shuxian; Chen, Li

    2018-02-07

    The utilization of silicon/carbon composites as anode materials to replace the commercial graphite is hampered by their tendency to huge volumetric expansion, costly raw materials, and complex synthesis processes in lithium-ion batteries. Herein, self-assembly method is successfully applied to prepare hierarchical silicon nanoparticles@oxidized mesocarbon microbeads/carbon (Si@O-MCMB/C) composites for the first time, in which O-MCMB core and low-cost sucrose-derived carbon shell not only effectively enhance the electrical conductivity of the anode, but also mediate the dramatic volume change of silicon during cycles. At the same time, the carbon can act as "adhesive", which is crucial in enhancing the adhesive force between Si and O-MCMB in the composites. The as-obtained Si@O-MCMB/C delivers an initial reversible capacity of 560 mAh g -1 at 0.1 A g -1 , an outstanding cyclic retention of 92.8% after 200 cycles, and respectable rate capability. Furthermore, the synthetic route presented here is efficient, less expensive, simple, and easy to scale up for high-performance composites.

  3. Aspects of the magmatic geochemistry of bismuth

    Science.gov (United States)

    Greenland, L.P.; Gottfried, D.; Campbell, E.Y.

    1973-01-01

    Bismuth has been determined in 74 rocks from a differentiated tholeiitic dolerite, two calc-alkaline batholith suites and in 66 mineral separates from one of the batholiths. Average bismuth contents, weighted for rock type, of the Great Lake (Tasmania) dolerite, the Southern California batholith and the Idaho batholith are, 32, 50 and 70 ppb respectively. All three bodies demonstrate an enrichment of bismuth in residual magmas with magmatic differentiation. Bismuth is greatly enriched (relative to the host rock) in the calcium-rich accessory minerals, apatite and sphene, but other mineral analyses show that a Bi-Ca association is of little significance to the magmatic geochemistry of bismuth. Most of the bismuth, in the Southern California batholith at least, occurs in a trace mineral phase (possibly sulfides) present as inclusions in the rock-forming minerals. ?? 1973.

  4. Performance Improvements of Metal-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with ZrO2 Charge-Trapping Layer by Using Nitrogen Incorporation

    Science.gov (United States)

    Chen, Jian-Xiong; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To

    2013-08-01

    The properties of ZrO2 and ZrON as the charge-trapping layer (CTL) of metal-oxide-nitride-oxide-silicon memory are investigated. The microstructure and chemical bonding are examined by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that nitrogen incorporation in ZrO2 can induce more charge-trapping sites, effectively suppress the formation of zirconium silicate (leading to better interface quality between the CTL and the SiO2 tunneling layer), and increase the dielectric constant of ZrO2, thus improving the memory performances (large memory window, high program/erase speed, good endurance characteristics, and small charge loss).

  5. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    International Nuclear Information System (INIS)

    Sarin, V.K.

    1991-01-01

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer

  6. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    Science.gov (United States)

    Sarin, Vinod K.

    1991-01-01

    A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  7. Liquid-infused nitric oxide-releasing (LINORel) silicone for decreased fouling, thrombosis, and infection of medical devices.

    Science.gov (United States)

    Goudie, Marcus J; Pant, Jitendra; Handa, Hitesh

    2017-10-19

    Recent reports on liquid-infused materials have shown promise in creating ultra-low fouling surfaces, but are limited in their ability to prevent bacterial proliferation and prevent platelet activation in blood-contacting applications. In this work, a liquid-infused nitric oxide-releasing (LINORel) material is created by incorporating the nitric oxide (NO) donor S-nitroso-acetylpenicillamine (SNAP) and silicone oil in commercial medical grade silicone rubber tubing through a solvent swelling process. This combination provides several key advantages over previous NO-releasing materials, including decreased leaching of NO donor, controlled release of NO, and maintenance of ultra-low fouling property of liquid-infused materials. The LINORel tubing reduces protein adhesion as observed using fluorescence imaging, and platelet adhesion (81.7 ± 2.5%) in vitro over a 2 h period. The LINORel combination greatly reduces bacterial adhesion and biofilm formation of two most common pathogens responsible for hospital acquired infections: gram-positive Staphylococcus aureus and gram-negative Pseudomonas aeruginosa (99.3 ± 1.9% and 88.5 ± 3.3% respectively) over a 7-day period in a CDC bioreactor environment. Overall, the LINORel approach provides a synergistic combination of active and passive non-fouling approaches to increase biocompatibility and reduce infection associated with medical devices.

  8. Experimental study of nucleate pool boiling heat transfer of water on silicon oxide nanoparticle coated copper heating surface

    International Nuclear Information System (INIS)

    Das, Sudev; Kumar, D.S.; Bhaumik, Swapan

    2016-01-01

    Highlights: • EBPVD approach was employed for fabrication of well-ordered nanoparticle coated micro/nanostructure on metal surface. • Nucleate boiling heat transfer performance on nanoparticle coated micro/nanostructure surface was experimentally studied. • Stability of nanoparticle coated surface under boiling environment was systematically studied. • 58% enhancement of boiling heat transfer coefficient was found. • Present experimental results are validated with well known boiling correlations. - Abstract: Electron beam physical vapor deposition (EBPVD) coating approach was employed for fabrication of well-ordered of nanoparticle coated micronanostructures on metal surfaces. This paper reports the experimental study of augmentation of pool boiling heat transfer performance and stabilities of silicon oxide nanoparticle coated surfaces with water at atmospheric pressure. The surfaces were characterized with respect to dynamic contact angle, surface roughness, topography, and morphology. The results were found that there is a reduction of about 36% in the incipience superheat and 58% enhancement in heat transfer coefficient for silicon oxide coated surface over the untreated surface. This enhancement might be the reason of enhanced wettability, enhanced surface roughness and increased number of a small artificial cavity on a heating surface. The performance and stability of nanoparticle coated micro/nanostructure surfaces were examined and found that after three runs of experiment the heat transfer coefficient with heat flux almost remain constant.

  9. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    Science.gov (United States)

    Sarin, V.K.

    1991-07-30

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  10. Iodine Gas Trapping using Granular Porous Bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jae Hwan; Shin, Jin Myeong; Park, Jang Jin; Park, Geun Il [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Yim, Mansung [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2014-05-15

    {sup 129}I is a radionuclide with a very long half-life of 1.57 Χ 10{sup 7} years and has negative health effects to the human body. Therefore, the emission of {sup 129}I into the air is closely regulated by the Environmental Protection Agency (EPA). Many methods for trapping gaseous {sup 129}I have been developed thus far, including wet scrubbing and adsorption using silver loaded zeolites. Although wet scrubbing can effectively remove iodine, it suffers from corrosion of the vessel due to high concentration of the scrubbing solution. Silver loaded zeolites also show effectiveness in capturing {sup 129}I gas, yet weak thermal stability of physisorbed iodine remains a challenge. We studied a novel and facile method to trap iodine gas using bismuth. Granular bismuth having many pores was synthesized using bismuth nitrate and polyvinyl alcohol as a bismuth precursor and pore forming agent, respectively. Reaction of iodine and our samples resulted in an iodine capturing capacity of more than 2 times that of the commercial grade silver exchanged zeolite (AgX). Granular porous bismuths synthesized using bismuth nitrate and PVA show a promising performance in capturing iodine gas. The use of bismuth in trapping {sup 129}I gas can reduce the process cost as bismuth is cheap. Further study is going on to improve the mechanical property of granular porous bismuths for their easy handling.

  11. Recent advances in bioinorganic chemistry of bismuth.

    Science.gov (United States)

    Li, Hongyan; Sun, Hongzhe

    2012-04-01

    Bismuth has been used in medicine for over two centuries for the treatment of various diseases, in particular for gastrointestinal disorders, owing to its antimicrobial activity. Recent structural characterization of bismuth drugs provides an insight into assembly and pharmacokinetic pathway of the drugs. Mining potential protein targets inside the pathogen via metallomic/metalloproteomic approach and further characterization on the interactions of bismuth drugs with these targets laid foundation in understanding the mechanism of action of bismuth drugs. Such studies would be beneficial in rational design of new potential drugs. Copyright © 2012 Elsevier Ltd. All rights reserved.

  12. BISMUTH PHOSPHATE CARRIER PROCESS FOR Pu RECOVERY

    Science.gov (United States)

    Finzel, T.G.

    1959-02-01

    An improvement in the bismuth phosphate carrier precipitation process for recovering plutonium is described. It has been found that a more granular and more easily filterable carrier precipitiite is formed if the addition of the bismuth and phosphate ions is effected by first adding 9/10 of the bismuth ions necessary, then slowly adding all of the source of the phosphate ions to be incorporated in the precipitate, while digesting at 75 C and afterwards incorporating the remainder of the total bismuth ions necessary

  13. Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy

    Science.gov (United States)

    Gonon, N.; Gagnaire, A.; Barbier, D.; Glachant, A.

    1994-11-01

    Rapid thermal oxidation of Czochralski-grown silicon in either O2 or N2O atmospheres have been studied using spectroellipsometry and Auger electron spectroscopy. Multiwavelength ellipsometric data were processed in order to separately derive the thickness and refractive indexes of rapid thermal dielectrics. Results revealed a significant increase of the mean refractive index as the film thickness falls below 20 nm for both O2 or N2O oxidant species. A multilayer structure including an about 0.3-nm-thick interfacial region of either SiO(x) or nitroxide in the case of O2 and N2O growth, respectively, followed by a densified SiO2 layer, was found to accurately fit the experimental data. The interfacial region together with the densified state of SiO2 close to the interface suggest a dielectric structure in agreement with the continuous random network model proposed for classical thermal oxides. Auger electron spectroscopy analysis confirmed the presence of noncrystalline Si-Si bonds in the interfacial region, mostly in the case of thin oxides grown in O2. It was speculated that the initial fast growth regime was due to a transient oxygen supersaturation in the interfacial region. Besides, the self-limiting growth in N2O was confirmed and explained in agreement with several recently published data, by the early formation of a very thin nitride or oxynitride membrane in the highly densified oxide beneath the interface. The beneficial effect of direct nitrogen incorporation by rapid thermal oxidation in N2O instead of O2 for the electrical behavior of metal-oxide-semiconductor capacitors is likely a better SiO2/Si lattice accommodation through the reduction of stresses and Si-Si bonds in the interfacial region of the dielectric.

  14. Photoreductive generation of amorphous bismuth nanoparticles using polysaccharides--bismuth-cellulose nanocomposites.

    Science.gov (United States)

    Breitwieser, Doris; Kriechbaum, Margit; Ehmann, Heike M A; Monkowius, Uwe; Coseri, Sergiu; Sacarescu, Liviu; Spirk, Stefan

    2015-02-13

    A simple and highly reproducible synthesis of amorphous bismuth nanoparticles incorporated into a polysaccharide matrix using a photoreduction process is presented. As precursor for the generation of the Bi nanoparticles, organosoluble triphenylbismuth is used. The precursor is dissolved in toluene and mixed with a hydrophobic organosoluble polysaccharide, namely trimethylsilyl cellulose (TMSC) with high DSSi. The solution is subjected to UV exposure, which induces the homolytic cleavage of the bismuth-carbon bond in BiPh3 resulting in the formation of Bi(0) and phenyl radicals. The aggregation of the Bi atoms can be controlled in the TMSC matrix and yields nanoparticles of around 20 nm size as proven by TEM. The phenyl radicals undergo recombination to form small organic molecules like benzene and biphenyl, which can be removed from the nanocomposite after lyophilization and exposure to high vacuum. Finally, the TMSC matrix is converted to cellulose after exposure to HCl vapors, which remove the trimethylsilyl groups from the TMSC derivative. Although TMSC is converted to cellulose, the formed TMS-OH is not leaving the nanocomposite but reacts instead with surface oxide layer of the Bi nanoparticles to form silylated Bi nanoparticles as proven by TEM/EDX. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. Bismuth absorption from sup 205 Bi-labelled pharmaceutical bismuth compounds used in the treatment of peptic ulcer disease

    Energy Technology Data Exchange (ETDEWEB)

    Dresow, B.; Fischer, R.; Gabbe, E.E.; Wendel, J.; Heinrich, H.C. (Eppendorf University Hospital, Hamburg (Germany))

    1992-04-01

    The absorption of bismuth from five {sup 205}Bi-labelled pharmaceutically used bismuth compounds was studied in man. From single oral doses of all compounds under investigation only <0.1% bismuth was absorbed and excreted with the urine. A significantly higher absorption was observed from the colloidal bismuth subcitrate and the basic bismuth gallate than from the basic bismuth salicylate, nitrate and aluminate. No retention of bismuth in the whole body was found from the single dose experiment. The biologic fast-term half-lives of absorbed bismuth were calculated to be 0.12 and 1.5 days. 14 refs., 2 figs., 1 tab.

  16. Aggregation and hydrolysis reactions of bismuth alkoxides

    International Nuclear Information System (INIS)

    Whitmire, K.H.; Jones, C.M.; Burkart, M.D.; Hutchinson, J.C.; McKnight, A.L.

    1992-01-01

    This paper reports that new bismuth alkoxide and oxo-alkoxide complexes have been prepared from the salt metathesis reaction of NaOR with BiCl 3 . When R = CH(CF 3 ) 2 , the product is [Bi(μ-OR)(OR) 2 (THF)] 2 . similar work with R = C 6 F 5 has not yielded a simple alkoxide, but complexes of formulation NaBi 3 (μ 3 -O)(OR) 8 (THF), NaBi 4 (μ 3 -O) 2 (OR) 9 (THF) 2 , Na 2 Bi 4 (μ 3 -O) 2 (OR) 10 and Bi 6 (μ 3 -OR)(μ 3 -O) 4 [μ 3 -OBI(OR) 4 ] 3 have been observed. The reaction of BiPh 3 with HOC 6 F 5 , however, did produce the desired alkoxide which has been characterized as [Bi(OR) 2 (μ-OR)(toluene)] 2 and [Bi(OR) 2 (μ-OR)(toluene)] 2 · 2 toluene. The reaction of this alkoxide with NaOC 6 F 5 led to the production of Bi 6 (μ 3 -O) 2 (μ 4 -O)(OR) 12 and NaBi 3 (μ 3 -O)(OR) 8 (THF) 3 . Reaction of BiPh 3 with HOC 6 F 5 in THF led to the formation of Bi 6 (μ 3 -OR)(μ 3 -O) 4 [μ 3 -OBi(OR) 4 ] 3 (THF) 2 . Surprisingly the reaction of BiEt 3 and HOR (R = C 6 F 5 or Ph) displaced only one Et group to give [Et 2 Bi(μ-OR)] oo which exist as infinite chain polymers with alternating Bi-O-Bi backbones. These spiral chains form chiral helices in the crystal lattice. The discovery of high T C superconducting copper oxide phases containing bismuth, lead and thallium has led to this investigation

  17. Recognition enhancement of oxidized and methyl-10-undecenoate functionalized porous silicon in gas phase photoluminescence sensing

    Czech Academy of Sciences Publication Activity Database

    Dian, J.; Vrkoslav, Vladimír; Jelínek, I.

    2010-01-01

    Roč. 147, - (2010), s. 406-410 ISSN 0925-4005 Institutional research plan: CEZ:AV0Z40550506 Keywords : porous silicon * photoluminescence * sensor * recognition enhancement Subject RIV: CC - Organic Chemistry Impact factor: 3.368, year: 2010

  18. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  19. Ranitidine bismuth citrate: A review

    Directory of Open Access Journals (Sweden)

    N Chiba

    2001-01-01

    Full Text Available Recognition of the relationship between Helicobacter pylori infection and the development of gastroduodenal disease has increased greatly in recent years. To avoid complications of H pylori infection, such as the development of recurrent duodenal and gastric ulcers, effective therapies are required for eradication of the infection. This article reviews ranitidine bismuth citrate (RBC, a novel complex of ranitidine, bismuth and citrate, which was developed specifically for the purpose of eradicating H pylori. Dual therapy with RBC in combination with clarithromycin for 14 days yields eradication rates of 76%. Triple therapy bid for one week with a proton pump inhibitor, clarithromycin and either amoxicillin or a nitroimidazole (tinidazole or metronidazole is advocated as the treatment of choice for H pylori eradication. Analogous regimens with RBC in place of proton pump inhibitors show effective eradication rates in comparative studies and with pooled data. RBC, used alone or in combination with other antibiotics, appears to be a safe and effective drug for the treatment of H pylori infection. Bismuth levels do not appear to rise to toxic levels.

  20. [Biocompatibility of silicon containing micro-arc oxidation coated magnesium alloy ZK60 with osteoblasts cultured in vitro].

    Science.gov (United States)

    Yang, Xiaoming; Yin, Qingshui; Zhang, Yu; Li, Mei; Lan, Guobo; Lin, Xiao; Tan, Lili; Yang, Ke

    2013-05-01

    To research in vitro biocompatibility of silicon containing micro-arc oxidation (MAO) coated magnesium alloy ZK60 with osteoblasts. The surface microstructure of silicon containing MAO coated magnesium alloy ZK60 was observed by a scanning electron microscopy (SEM), and chemical composition of the coating surface was determined by energy dispersive spectrum analysis. The experiments were divided into 4 groups: silicon containing MAO coated magnesium alloy ZK60 group (group A), uncoated magnesium alloy ZK60 group (group B), titanium alloy group (group C), and negative control group (group D). Extracts were prepared respectively with the surface area to extraction medium ratio (1.25 cm(2)/mL) according to ISO 10993-12 standard in groups A, B, and C, and were used to culture osteoblasts MC3T3-E1. The a-MEM medium supplemented with 10% fetal bovine serum was used as negative control in group D. The cell morphology was observed by inverted phase contrast microscopy. MTT assay was used to determine the cell viability. The activity of alkaline phosphatase (ALP) was detected. Cell attachment morphology on the surface of different samples was observed by SEM. The capability of protein adsorption of the coating surface was assayed, then DAPI and calcein-AM/ethidium homodimer 1 (calcein-AM/EthD-1) staining were carried out to observe cell adhesion and growth status. The surface characterization showed a rough and porous layer with major composition of Mg, O, and Si on the surface of silicon containing MAO coated magnesium alloy ZK60 by SEM. After cultured with the extract, cells grew well and presented good shape in all groups by inverted phase contrast microscopy, group A was even better than the other groups. At 5 days, MTT assay showed that group A presented a higher cell proliferation than the other groups (P silicon containing MAO coated magnesium alloy ZK60 has obvious promoting effects on the proliferation, adhesion, and differentiation of osteoblasts, showing a good

  1. Efficient and Stable CsPbBr3 Quantum-Dot Powders Passivated and Encapsulated with a Mixed Silicon Nitride and Silicon Oxide Inorganic Polymer Matrix.

    Science.gov (United States)

    Yoon, Hee Chang; Lee, Soyoung; Song, Jae Kyu; Yang, Heesun; Do, Young Rag

    2018-04-11

    Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX 3 ) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr 3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiN x /SiN x O y /SiO y passivated and encapsulated CsPbBr 3 /PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr 3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiN x , SiN x O y , and SiO y liganded to the surfaces of the CsPbBr 3 QDs to optimize the PLQY and the stability of CsPbBr 3 /PSZ core/shell composite, which shows a high PLQY (∼81.7%) with improved thermal, photo, air, and humidity stability as well under coarse conditions where the performance of CsPbBr 3 QDs typically deteriorate. To evaluate the suitability of the application of the CsPbBr 3 /PSZ powder to down-converted white-light-emitting diodes (DC-WLEDs) as the backlight of a liquid crystal display (LCD), we fabricated an on-package type of tricolor-WLED by mixing the as-synthesized green CsPbBr 3 /PSZ composite powder with red K 2 SiF 6 :Mn 4+ phosphor powder and a poly(methyl methacrylate)-encapsulating binder and coating this mixed paste onto a cup-type blue LED. The fabricated WLED show high luminous efficacy of 138.6 lm/W (EQE = 51.4%) and a wide color gamut of 128% and 111% without and with color filters, respectively, at a correlated color temperature of 6762 K.

  2. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  3. White-emitting oxidized silicon nanocrystals: Discontinuity in spectral development with reducing size

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, Kateřina; Ondič, Lukáš; Kůsová, Kateřina; Pelant, Ivan; Rehspringer, J.L.; Mafouana, R.-R.

    2010-01-01

    Roč. 107, č. 5 (2010), 053102/1-053102/6 ISSN 0021-8979 R&D Projects: GA AV ČR(CZ) IAA101120804; GA MŠk LC510; GA AV ČR KJB100100903; GA ČR GA202/07/0818 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * luminescence * spectral shift Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010

  4. Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

    Science.gov (United States)

    Stefik, Morgan

    2016-07-07

    The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. High-temperature oxidation of silicide-aluminide layer on the TiAl6V4 alloy prepared by liquid-phase siliconizing

    Czech Academy of Sciences Publication Activity Database

    Kubatík, Tomáš František

    2016-01-01

    Roč. 50, č. 2 (2016), s. 257-261 ISSN 1580-2949 Institutional support: RVO:61389021 Keywords : TiAl6V4 * silicides * high-temperature oxidation * liquid-phase silicon izing Subject RIV: JG - Metallurgy Impact factor: 0.436, year: 2016

  6. Isothermal and cyclic oxidation resistance of pack siliconized Mo-Si-B alloy

    Science.gov (United States)

    Majumdar, Sanjib

    2017-08-01

    Oxidation behaviour of MoSi2 coated Mo-9Si-8B-0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi2 layer during thermal cycling. The dominant oxidation mechanisms at 750-900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  7. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material.

    Science.gov (United States)

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-03-21

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g(-1). Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.

  8. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  9. Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films

    International Nuclear Information System (INIS)

    Busch, M.C.

    1992-05-01

    Structural and electric properties of silicon oxide films irradiated by high energy xenon, nickel or oxygen ions are studied. The local atomic structure modifications are evidenced by infra-red spectroscopy. These modifications are highly dependent of ion mass and of irradiation fluence. Point defects are formed by rupture of Si-O bonds and the SiO 2 network is deformed producing high stresses at Si-O-Si bonds between tetrahedrons, the decrease of the mean value of angles between tetrahedrons is correlated to a decrease of silicon interatomic distances and a densification effect.Damaging cross-sections and track radii are determined for each ion. Damages are annihilated by annealing at 950 deg. C for 1 hour. Electric properties are degraded by irradiation, the interface state density is increased and trapped positive charges are created. These defects are correlated to point defects created by broken Si-O bonds inside the volume and at the interface. Deep level transient spectroscopy shows vacancy-interstitial defects increasing in concentration with irradiation fluence. These defects are similar to those obtained by irradiation with light particles

  10. Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films

    Directory of Open Access Journals (Sweden)

    Juergen M. Lackner

    2013-12-01

    Full Text Available Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~25 nm thin films, deposited by vacuum deposition techniques on 50 µm thin polyetheretherketone (PEEK foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source was applied to deposit pure and nitrogen doped diamond-like carbon films, while physical vapor deposition (magnetron sputtering in pulsed DC mode was used for the formation of silicon as well as titanium doped diamond-like carbon films. Silicon oxide films were deposited by radio frequency magnetron sputtering. The results indicate a strong influence of nanoporosity on the oxygen transmission rate for all coating types, while the low content of microporosity (particulates, etc. is shown to be of lesser importance. Due to the low thickness of the foil substrates, being easily bent, the toughness as a measure of tendency to film fracture together with the elasticity index of the thin films influence the oxygen barrier. All investigated coatings are non-pyrogenic, cause no cytotoxic effects and do not influence bacterial growth.

  11. Element Distribution in the Oxygen-Rich Side-Blow Bath Smelting of a Low-Grade Bismuth-Lead Concentrate

    Science.gov (United States)

    Yang, Tianzu; Xiao, Hui; Chen, Lin; Chen, Wei; Liu, Weifeng; Zhang, Duchao

    2018-03-01

    Oxygen-rich side-blow bath smelting (OSBS) technology offers an efficient method for processing complex bismuth-lead concentrates; however, the element distributions in the process remain unclear. This work determined the distributions of elements, i.e., bismuth, lead, silver, copper, arsenic and antimony, in an industrial-scale OSBS process. The feed, oxidized slag and final products were collected from the respective sampling points and analyzed. For the oxidative smelting process, 65% of bismuth and 76% of silver in the concentrate report to the metal alloy, whereas less lead reports to the metal ( 31%) than the oxidized slag ( 44%). Approximately 50% of copper enters the matte, while more than 63% of arsenic and antimony report to the slag. For the reductive smelting process, less than 4.5% of bismuth, lead, silver and copper in the oxidized slag enter the reduced slag, indicating high recoveries of these metal values.

  12. Silicon (Si) alleviates cotton (Gossypium hirsutum L.) from zinc (Zn) toxicity stress by limiting Zn uptake and oxidative damage.

    Science.gov (United States)

    Anwaar, Shad Ali; Ali, Shafaqat; Ali, Skhawat; Ishaque, Wajid; Farid, Mujahid; Farooq, Muhammad Ahsan; Najeeb, Ullah; Abbas, Farhat; Sharif, Muhammad

    2015-03-01

    Silicon (Si) is as an important fertilizer element, which has been found effective in enhancing plant tolerance to variety of biotic and a-biotic stresses. This study investigates the Si potential to alleviate zinc (Zn) toxicity stress in cotton (Gossypium hirsutum L.). Cotton plants were grown in hydroponics and exposed to different Zn concentration, 0, 25, and 50 μM, alone and/or in combination with 1 mM Si. Incremental Zn concentration in growth media instigated the cellular oxidative damage that was evident from elevated levels of hydrogen peroxide (H2O2), electrolyte leakage, and malondialdehyde (MDA) and consequently inhibited cotton growth, biomass, chlorophyll pigments, and photosynthetic process. Application of Si significantly suppressed Zn accumulation in various plant parts, i.e., roots, stems, and leaves and thus promoted biomass, photosynthetic, growth parameters, and antioxidant enzymes activity of Zn-stressed as well unstressed plants. In addition, Si reduced the MDA and H2O2 production and electrolyte leakage suggesting its role in protecting cotton plants from Zn toxicity-induced oxidative damage. Thus, the study indicated that exogenous Si application could improve growth and development of cotton crop experiencing Zn toxicity stress by limiting Zn bioavailability and oxidative damage.

  13. The initial stages of atomic force microscope based local anodic oxidation of silicon

    Science.gov (United States)

    Kozhukhov, A. S.; Scheglov, D. V.; Fedina, L. I.; Latyshev, A. V.

    2018-02-01

    In this paper, the initial stages of local anodic oxidation (LAO) process initiated by AFM probe are studied on the wide (˜100μm) terraces of the atomic-smooth Si (111) surface when creating dense array of local oxidation points. The dependence of LAO points height on the value of voltage initiating the oxidation is found to have a pronounced step-like feature with a characteristic period of 0.7 ± 0.1 nm. The presented analysis shows for the first time the realization of the step-layer mechanism of anodic oxide growth on the Si (111) surface.

  14. Performance of Chevron-notch short bar specimen in determining the fracture toughness of silicon nitride and aluminum oxide

    Science.gov (United States)

    Munz, D.; Bubsey, R. T.; Shannon, J. L., Jr.

    1980-01-01

    Ease of preparation and testing are advantages unique to the chevron-notch specimen used for the determination of the plane strain fracture toughness of extremely brittle materials. During testing, a crack develops at the notch tip and extends stably as the load is increased. For a given specimen and notch configuration, maximum load always occurs at the same relative crack length independent of the material. Fracture toughness is determined from the maximum load with no need for crack length measurement. Chevron notch acuity is relatively unimportant since a crack is produced during specimen loading. In this paper, the authors use their previously determined stress intensity factor relationship for the chevron-notch short bar specimen to examine the performance of that specimen in determining the plane strain fracture toughness of silicon nitride and aluminum oxide.

  15. Corrosion behavior of plasma sprayed hydroxyapatite and hydroxyapatite-silicon oxide coatings on AISI 304 for biomedical application

    Science.gov (United States)

    Singh, Gurpreet; Singh, Hazoor; Sidhu, Buta Singh

    2013-11-01

    The objective of this study is to evaluate corrosion resistance of plasma sprayed hydroxyapatite (HA) and HAsbnd silicon oxide (SiO2) coated AISI 304 substrates. In HAsbnd SiO2 coatings, 10 wt% SiO2 and 20 wt% SiO2 was mixed with HA. The feedstock and coatings were characterized by X-ray diffraction and scanning electron microscopy/energy dispersive X-ray spectroscopy. The corrosion resistance was determined for the uncoated and coated samples. The corrosion resistance of the AISI 304 was found more after the deposition of the HAsbnd SiO2 coatings rather than HA coating and uncoated. All the coatings were crack free after 24 h dipping in Ringer's solution for electrochemical corrosion testing.

  16. Gas Sensing Properties of Indium Oxide Thin Film on Silicon Substrate Prepared by Spin-Coating Method

    Science.gov (United States)

    Chung, Wan-Young; Sakai, Go; Shimanoe, Kengo; Miura, Norio; Lee, Duk-Dong; Yamazoe, Noboru

    1998-09-01

    Thin films of indium oxide were prepared on a silicon substrate by a spin-coating method using a coating solution dissolving In(OH)3, acetic acid and ammonium carboxymethyl cellulose. The films consisted of a dense stack of fairly uniform grains, adhering well to the substrate, as observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The film thickness was well controlled by repeating the spin-coating. The sensing properties of the In2O3 film to CO, H2 and C3H8 depended on the film thickness and temperature, fairly good sensing performance to CO being achieved with a 140-nm-thick film at 350°C. The contact between platinum electrode and In2O3 in these devices was found to be slightly non-Ohmic, unlike that in the sintered block type device.

  17. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

    International Nuclear Information System (INIS)

    Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

    2006-01-01

    In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

  18. Protein-Repellent Silicon Nitride Surfaces: UV-Induced Formation of Oligoethylene Oxide Monolayers

    NARCIS (Netherlands)

    Rosso, M.; Nguyen, A.T.; Jong, de E.; Baggerman, J.; Paulusse, J.M.J.; Giesbers, M.; Fokkink, R.G.; Norde, W.; Schroën, C.G.P.H.; Rijn, van C.J.M.; Zuilhof, H.

    2011-01-01

    The grafting of polymers and oligomers of ethylene oxide onto surfaces is widely used to prevent nonspecific adsorption of biological material on sensors and membrane surfaces. In this report, we show for the first time the robust covalent attachment of short oligoethylene oxide-terminated alkenes

  19. Encapsulation of sacrificial silicon containing particles for SH oxide ceramics via a boehmite precursor route

    NARCIS (Netherlands)

    Carabat, A.L.; Van der Zwaag, S.; Sloof, W.G.

    2013-01-01

    Easy crack propagation in oxide ceramic coatings limits their application in high temperature environment (e.g. such as engines and gas turbine components) [1]. In order to overcome this problem, incorporation of sacrificial particles into an oxide ceramic coating may be a viable option. Particles

  20. New bismuth borophosphate Bi4BPO10: Synthesis, crystal structure, optical and band structure analysis

    International Nuclear Information System (INIS)

    Babitsky, Nicolay A.; Leshok, Darya Y.; Mikhaleva, Natalia S.; Kuzubov, Aleksandr A.; Zhereb, Vladimir P.; Kirik, Sergei D.

    2015-01-01

    New bismuth borophosphate Bi 4 BPO 10 was obtained by spontaneous crystallization from the melt of correspondent composition at 804 °C. Crystal structure with orthorhombic lattice parameters: a = 22.5731(3) Å, b = 14.0523(2) Å, c = 5.5149(1) Å, V = 1749.34(4), Z = 8, SG Pcab was determined by X-ray powder diffraction technique. The [Bi 2 O 2 ] 2+ -layers, which are typical for bismuth oxide compounds, transform into cationic endless strips of 4 bismuth atoms width directed along the c-axis in Bi 4 BPO 10 . The strips combining stacks are separated by flat triangle [BO 3 ] 3− -anions within stacks. Neighboring stacks are separated by tetrahedral [PO 4 ] 3− -anions and shifted relatively to each other. Bismuth atoms are placed in 5–7 vertex oxygen irregular polyhedra. Bi 4 BPO 10 is stable up to 812 °C, then melts according to the peritectic law. The absorption spectrum in the range 350–700 nm was obtained and the width of the forbidden band was estimated as 3.46 eV. The band electronic structure of Bi 4 BPO 10 was modeled using DFT approach. The calculated band gap (3.56 eV) is in good agreement with the experimentally obtained data. - Graphical abstract: Display Omitted - Highlights: • New bismuth borophosphate with composition Bi 4 BPO 10 was synthesized. • The crystal structure was determined by X-ray powder diffraction technique. • Bismuth-oxygen part [Bi 4 O 3 ] 6+ forms endless strips of 4 bismuth atoms width. • Electronic structure was modeled by DFT method. • The calculated band gap (3.56 eV) is very close to the experimental one (3.46 eV)

  1. Crystal growth of bismuth tungstate

    Energy Technology Data Exchange (ETDEWEB)

    De L' Eprevier, A. G.; Shukla, V. N.; Payne, D. A.

    1979-01-01

    Bi/sub 2/WO/sub 6/ is a polar material in the bismuth titanate family, Bi/sub 2/M/sub n-1/R/sub n/0/sub 3n+3/. Additions of NaF to a Na/sub 2/WO/sub 4/ - WO/sub 3/ flux yielded large single crystals up to 0.8 mm thick, which were free of inclusions. Total impurities were less than 500 ppM, and the crystals were single domain.

  2. Silicon nanowire charge-trap memory incorporating self-assembled iron oxide quantum dots.

    Science.gov (United States)

    Huang, Ruo-Gu; Heath, James R

    2012-11-19

    Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift the transistor threshold voltages, providing the basis for a memory device. Quantum dot size is found to strongly influence memory performance metrics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Investigating the addition of silicon oxide to carbon: Effects of amount and heat treatment on anti-aggregation and electrochemical performance of Pt catalysts

    Science.gov (United States)

    Wu, Yan-Ni; Liao, Shi-Jun; Zeng, Jian-Huang

    Small nanoparticles offer high surface areas and are certainly desirable for electrocatalytic reactions and fuel cells. However, the drawback of using small nanoparticles is their tendency towards particle aggregation. This paper aims to inhibit platinum agglomeration by adding silicon oxide to a carbon support for enhanced catalytic activity in low-temperature fuel cells. The catalysts are characterized by X-ray diffraction and transmission electron microscopy. Physical characterization and cyclic voltammetry techniques at room temperature are used to assess the effects of silicon oxide amount, post-heating temperature, and holding time on particle size and dispersion of active components, and the catalysts' activity towards the methanol oxidation and oxygen reduction reactions. It is found that using a support of carbon powder with 3 wt.% silicon oxide can enhance the electrochemically active surface area of Pt catalysts and their activity towards the anodic oxidation of methanol and reduction of oxygen. The active components are also more resistant than Pt/C to agglomeration upon heating.

  4. Structural investigations of bismuth lead borosilicate glasses under the influence of gamma irradiation through ultrasonic studies

    Science.gov (United States)

    Bootjomchai, Cherdsak; Laopaiboon, Jintana; Laopaiboon, Raewat

    2012-04-01

    The ultrasonic velocity measurements for different compositions of irradiated bismuth lead borosilicate glasses xBi2O3-(50-x)PbO-20B2O3-30SiO2 (x=2, 4, 6, 8, and 10 mol.%) were performed at room temperature using pulse-echo technique. Densities of glass samples were measured by Archimedes' principle using n-hexane as the immersion liquid. The results from the studies show that ultrasonic velocity, elastic moduli, Poisson's ratio, microhardness, and the Debye temperature increase with increasing bismuth oxide content and increasing gamma-radiation dose (3-12 Gy).

  5. Structure and Electrochemical Properties of a Mechanochemically Processed Silicon and Oxide-Based Nanoscale Composite as an Active Material for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2017-01-01

    Full Text Available Si is essential as an active material in Li-ion batteries because it provides both high charge and optimal cycling characteristics. A composite of Si particles, Cu particles, and pure H2O was realized to serve as an anode active material and optimize the charge–discharge characteristics of Li-ion batteries. The composite was produced by grinding using a planetary ball mill machine, which allowed for homogenous dispersion of nanoscale Cu3Si as Si–Cu alloy grains and nanoscale Si grains in each poly-Si particle produced. Furthermore, some Si particles were oxidized by H2O, and oxidized Si was distributed throughout the composite, mainly as silicon monoxide. As a result, each Si particle included silicon monoxide and conductive Cu3Si materials, allowing for effective optimization of the recharging and charge-discharge characteristics. Thus, a new and simple process was realized for synthesizing a Si active material composited with silicon oxides, including silicon monoxide. This Si-rich conductive material is suitable as an anode for Li-ion batteries with high charge and optimized cycling properties.

  6. Degradability and Clearance of Silicon, Organosilica, Silsesquioxane, Silica Mixed Oxide, and Mesoporous Silica Nanoparticles

    KAUST Repository

    Croissant, Jonas G.

    2017-01-13

    The biorelated degradability and clearance of siliceous nanomaterials have been questioned worldwide, since they are crucial prerequisites for the successful translation in clinics. Typically, the degradability and biocompatibility of mesoporous silica nanoparticles (MSNs) have been an ongoing discussion in research circles. The reason for such a concern is that approved pharmaceutical products must not accumulate in the human body, to prevent severe and unpredictable side-effects. Here, the biorelated degradability and clearance of silicon and silica nanoparticles (NPs) are comprehensively summarized. The influence of the size, morphology, surface area, pore size, and surface functional groups, to name a few, on the degradability of silicon and silica NPs is described. The noncovalent organic doping of silica and the covalent incorporation of either hydrolytically stable or redox- and enzymatically cleavable silsesquioxanes is then described for organosilica, bridged silsesquioxane (BS), and periodic mesoporous organosilica (PMO) NPs. Inorganically doped silica particles such as calcium-, iron-, manganese-, and zirconium-doped NPs, also have radically different hydrolytic stabilities. To conclude, the degradability and clearance timelines of various siliceous nanomaterials are compared and it is highlighted that researchers can select a specific nanomaterial in this large family according to the targeted applications and the required clearance kinetics.

  7. Bismuth ions are metabolized into autometallographic traceable bismuth-sulphur quantum dots

    Directory of Open Access Journals (Sweden)

    M Stoltenberg

    2009-06-01

    Full Text Available Bismuth – sulphur quantum dots can be silver enhanced by autometallography (AMG. In the present study, autometallographic silver enhanced bismuth-sulphur nanocrystals were isolated from unfixed cryo-sections of kidneys and livers of rats exposed to bismuth (Bi207 subnitrate. After being subjected to AMG all the organic material was removed by sonication and enzymatic digestion and the silver enhanced Bi- S quantum dots spun down by an ultracentrifuge and analyzed by scintillation. The analysis showed that the autometallographic technique traces approximately 94% of the total bismuth. This implies that the injected bismuth is ultimately captured in bismuthsulphur quantum dots, i.e., that Bi-S nanocrystals are the end product of bismuth metabolism

  8. Graphene oxide-Ag nanoparticles-pyramidal silicon hybrid system for homogeneous, long-term stable and sensitive SERS activity

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jia [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Xu, Shicai [Shandong Provincial Key Laboratory of Biophysics, College of Physics and Electronic Information, Dezhou University, Dezhou 253023 (China); Liu, Xiaoyun; Li, Zhe; Hu, Litao; Li, Zhen; Chen, Peixi; Ma, Yong [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Jiang, Shouzhen, E-mail: jiang_sz@126.com [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China); Ning, Tingyin [School of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Shandong Provincial Key Laboratory of Optics and Photonic Device, Jinan 250014 (China)

    2017-02-28

    Highlights: • We directly grown AgNPs on substrate by annealing method in the quartz tube. Compare with spin-coating Ag nanoparticles solution method, we got more uniform distribution of AgNPs and the AgNPs better adsorption on the substrate. • We use a simple and lost-cost method to obtain the pyramidal silicon (PSi). The PSi possessing well-separated pyramid arrays can make contribution to the homogeneity and sensitivity of the substrate. • In our work, graphene oxide (GO) film is uniformly deposited on AgNPs and PSi by using a spin-coating method. The GO films endow the hybrid system a good stability and enhance the homogeneity and sensitivity of the substrate. - Abstract: In our work, few layers graphene oxide (GO) were directly synthesized on Ag nanoparticles (AgNPs) by spin-coating method to fabricate a GO-AgNPs hybrid structure on a pyramidal silicon (PSi) substrate for surface-enhanced Raman scattering (SERS). The GO-AgNPs-PSi substrate showed excellent Raman enhancement effect, the minimum detected concentration for Rhodamine 6G (R6G) can reach 10{sup −12} M, which is one order of magnitude lower than the AgNPs-PSi substrate and two order of magnitude lower than the GO-AgNPs-flat-Si substrate. The linear fit calibration curve with error bars is presented and the value of R{sup 2} of 612 and 773 cm{sup −1} can reach 0.986 and 0.980, respectively. The excellent linear response between the Raman intensity and R6G concentrations prove that the prepared GO-AgNPs-PSi substrates can serve as good SERS substrate for molecule detection. The maximum deviations of SERS intensities from 20 positions of the GO-AgNPs-PSi substrate are less than 8%, revealing the high homogeneity of the SERS substrate. The excellent homogeneity of the enhanced Raman signals can be attributed to well-separated pyramid arrays of PSi, the uniform morphology of AgNPs and multi-functions of GO layer. Besides, the uniform GO film can effectively protect AgNPs from oxidation and endow

  9. Dismantling and chemical characterization of spent Peltier thermoelectric devices for antimony, bismuth and tellurium recovery.

    Science.gov (United States)

    Balva, Maxime; Legeai, Sophie; Garoux, Laetitia; Leclerc, Nathalie; Meux, Eric

    2017-04-01

    Major uses of thermoelectricity concern refrigeration purposes, using Peltier devices, mainly composed of antimony, bismuth and tellurium. Antimony was identified as a critical raw material by EU and resources of bismuth and tellurium are not inexhaustible, so it is necessary to imagine the recycling of thermoelectric devices. That for, a complete characterization is needed, which is the aim of this work. Peltier devices were manually dismantled in three parts: the thermoelectric legs, the alumina plates on which remain the electrical contacts and the silicone paste used to connect the plates. The characterization was performed using five Peltier devices. It includes mass balances of the components, X-ray diffraction analysis of the thermoelectric legs and elemental analysis of each part of the device. It appears that alumina represents 45% of a Peltier device in weight. The electrical contacts are mainly composed of copper and tin, and the thermoelectric legs of bismuth, tellurium and antimony. Thermoelectric legs appear to be Se-doped Bi 2 Te 3 and (Bi 0,5 Sb 1,5 )Te 3 for n type and p type semiconductors, respectively. This work shows that Peltier devices can be considered as a copper ore and that thermoelectric legs contain high amounts of bismuth, tellurium and antimony compared to their traditional resources.

  10. Radio-sensitization of animals by bismuth

    International Nuclear Information System (INIS)

    Pierotti, T.; Verain, A.

    1969-01-01

    Digestive absorption of bismuth by animals leads to radio-sensitization. This effect is very marked when the X-rays used are centered on the absorption line of bismuth. This work has involved the use of more than 2000 C3H/JAX mice, and has shown that a maximum lethal effect, with respect to the standard, occurs for bismuth sub-nitrate doses of the order of 3 g/kg and for exposures of 700 R. For stronger or weaker doses, the sensitization effect is less marked. (authors) [fr

  11. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  12. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  13. Investigation of temperature dependence of muonic X-ray spectra structure in silicon and vanadium oxides

    International Nuclear Information System (INIS)

    Andreeff, A.; Evseev, V.S.; Minkova, A.; Ortlepp, H.-G.; Roganov, V.S.; Rybakov, V.N.; Sabirov, B.M.; Fromm, W.

    1979-01-01

    To study the influence of matter macroscopic properties on the negative muon atomic capture the muonic X-ray spectra have been measured from silicon at 77 deg and 295 deg, from VO 2 at 295 deg and 355 deg, and from V 2 O 3 at 77 deg and 295 deg using a Ge(Li) spectrometer 55 cm 3 in volume and ''on-line'' technique. It is shown that neither changes of a conductivity in all targets, nor a rebuilding of both vanadium oxydes crystal structure at phase transition does not cause any alteration in muonic X-ray spectrum. The obtained results are discussed in terms of a ''time pit''

  14. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  15. Non-oxidized porous silicon-based power AC switch peripheries

    Science.gov (United States)

    Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

    2012-10-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

  16. Basic principles of lead and lead-bismuth eutectic application in blanket of fusion reactors

    International Nuclear Information System (INIS)

    Beznosov, A.V.; Pinaev, S.S.; Muraviev, E.V.; Romanov, P.V.

    2005-01-01

    High magnetohydrodynamic pressure drop is an important issue for liquid metal blanket concepts. To decrease magnetohydrodynamic resistance authors propose to form insulating coatings on internal surface of blanket ducts at any moment of fusion reactor exploitation. It may be achieved easily if lead or lead-bismuth eutectic is used and technology of oxidative potential handling is applied. A number of experiments carried out in NNSTU show the availability of the proposed technology. It bases on formation of the insulating coatings that consist of the oxides of components of the structural materials and of the coolant components. In-situ value of the insulating coatings characteristics ρδ is ∼ 10 -5 Ohm·m 2 for steels and 5,0x10 -6 - 5,0x10 -5 Ohm·m 2 for vanadium alloys. Thermal cycling is possible during exploitation of a blanket. The experimental research of the insulating coatings properties during thermal cycling have shown that the coatings formed into the lead and lead-bismuth coolants save there insulating properties. Experience of many years is an undoubted advantage of the lead-bismuth coolant and less of the lead coolant in comparison with lithium. Russian Federation possesses of experience of exploitation of the research and industrial facilities, of experience of creation of the pumps, steamgenerators and equipment with heavy liquid metal coolants. The unique experience of designing, assembling and exploitation of the fission reactors with lead-bismuth coolant is also available. The problem of technology of lead and lead-bismuth coolants for power high temperature radioactive facilities has been solved. Accidents, emergency situations such as leakage of steamgenerators or depressurization of gas system in facilities with lead and lead-bismuth coolants have been explored and suppressed. (author)

  17. Oxidation and corrosion mechanisms for silicon nitride - based ceramics in air and fused salts

    International Nuclear Information System (INIS)

    Byrne, P.; Ramesh, R.; Pomeroy, M.J.

    1997-01-01

    Oxidation and corrosion experiments have been conducted using yttria densified β-sialons (Si (6-z) Al z O z N (8-z) ) with a range of z-values. Oxidation studies were conducted in laboratory air at a temperature of 1350 C for times of up to 256 hours. Complementary corrosion studies were conducted using coupons of the materials immersed in a eutectic (Na:K) 2 SO 4 mixture at 1150 C for time periods of up to 96 hours. Using results obtained from detailed energy dispersive X-ray analyses of degraded surfaces and polished sections and X-ray diffraction of surface corrosion products it is concluded that the mechanism by which oxidation at 1350 C and molten sulphate corrosion at 1150 C occurs is due to the solution of β-sialon grains by a liquid phase. For oxidation, the liquid phase is a Y-Si-Al-O liquid possibly containing nitrogen which forms because of the diffusion of yttrium and aluminium from the ceramic into the oxide scale. For corrosion by the molten sulphate, the liquid phase is complex and comprises an aluminosilicate liquid containing Na, K and Y which is extremely corrosive to all of the materials except the β-sialon with z=3.0. (orig.)

  18. Silicon nanowires with high-k hafnium oxide dielectrics for sensitive detection of small nucleic acid oligomers.

    Science.gov (United States)

    Dorvel, Brian R; Reddy, Bobby; Go, Jonghyun; Duarte Guevara, Carlos; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-07-24

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO(2)), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFETs has been small oligonucleotides, more specifically, microRNA (miRNA). MicroRNAs are small RNA oligonucleotides which bind to mRNAs, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO(2) dielectric-based silicon nanowires for biosensing applications. Here we demonstrate sensing of single-stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100 fM detection levels of the miR-10b DNA analogue, with a theoretical limit of detection of 1 fM. Moreover, the noncomplementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform.

  19. Transmucosal penetration of bismuth particles in the human stomach.

    Science.gov (United States)

    Nwokolo, C U; Lewin, J F; Hudson, M; Pounder, R E

    1992-01-01

    Electron microscopic examination of upper gastrointestinal biopsies with x-ray microanalysis was used to detect electron-dense particles of bismuth in the mucosa of the upper gastrointestinal tract, 30-60 minutes after oral dosing with either tripotassium dicitrato bismuthate [De-Noltab; Brocades (Great Britain) Ltd., Weybridge, UK; five patients] or bismuth salicylate (Pepto-Bismol; Richardson Vicks Ltd., Egham, UK; five patients), or without dosing (two patients). Transmucosal penetration of bismuth particles was observed in the gastric antral mucosa of all patients who had been dosed with tripotassium dicitrato bismuthate, but there was no penetration after oral dosing with bismuth salicylate. Persorption of bismuth particles through the gastric mucosa to the vascular endothelium provides an explanation for the rapid rise of plasma bismuth concentration observed only after oral dosing with tripotassium dicitrato bismuthate.

  20. Compatibility tests on steels in molten lead and lead-bismuth

    International Nuclear Information System (INIS)

    Fazio, C.; Benamati, G.; Martini, C.; Palombarini, G.

    2001-01-01

    The compatibility of steels with liquid lead and liquid lead-bismuth is a critical issue for the development of accelerator-driven system (ADS). In this work the results of a set of preliminary tests carried out in stagnant molten lead at 737 K and in lead-bismuth at 573, 673 and 749 K are summarised. The tests were conducted for 700, 1200, 1500 and 5000 h. Three steels were tested: two martensitic steels (mod. F82H and MANET II) and one austenitic steel (AISI 316L). The martensitic steels underwent oxidation phenomena at the higher testing temperature, due to oxygen dissolved in the melts. At a lower test temperature (573 K) and higher exposure time (5000 h) the oxidation rate of the martensitic steel seems to be lower and the developed oxide layer protective against liquid metal corrosion. The austenitic steel, in turn, exhibited an acceptable resistance to corrosion-oxidation under the test conditions

  1. Silicon-Enriched Restructured Pork Affects the Lipoprotein Profile, VLDL Oxidation, and LDL Receptor Gene Expression in Aged Rats Fed an Atherogenic Diet.

    Science.gov (United States)

    Garcimartín, Alba; Santos-López, Jorge A; Bastida, Sara; Benedí, Juana; Sánchez-Muniz, Francisco J

    2015-09-01

    Research has shown that silicon can play an important role in protecting against degenerative diseases. Restructuring pork by partially disassembling meat permits the incorporation of active components with potential functional effects. However, there has been no research to date on the impact that silicon, as a functional ingredient in restructured pork (RP), has on lipoprotein composition, metabolism, and oxidation. This study was designed to evaluate the effect of silicon-enriched RP on lipemia, lipoprotein profile, and oxidation markers of aged rats fed high-fat, high-energy, cholesterol-enriched diets. RP samples similar to commercial sausages (16% protein and 22% fat, wt:wt) were prepared by mixing lean pork and lard alone or with silicon (1.3 g Si/kg fresh matter) under controlled conditions and then freeze-dried. Saturated fat-rich diets were designed by mixing 78.3% purified diet with 21.7% freeze-dried RP. Three groups composed of 8 aged male Wistar rats (1 y old) were fed for 8 wk a control RP (C) diet, a cholesterol-enriched RP (Chol-C) diet [C diet enriched with 1.26% cholesterol plus 0.25% cholic acid, or a cholesterol and silicon-enriched RP (Chol-Si) diet (same as the Chol-C diet but containing silicon)]. Plasma lipid concentrations, lipoprotein profile, the degree of VLDL oxidation, and LDL receptor gene (Ldlr) expression were tested. Compared with the C diet, the Chol-C diet did not modify food intake or body weight but significantly increased (P 600%), total lipids and proteins (both >300%), and the degree of VLDL oxidation [conjugated dienes >250%; thiobarbituric acid-reactive substance (TBARS), 900%] and reduced Ldlr expression (64%) and liver arylesterase activity (54%). The Chol-Si diet partially normalized changes induced by the Chol-C diet. Compared with the Chol-C group, Chol-Si rats had lower VLDL compound concentrations (P Silicon added to RP strongly counterbalanced the negative effect of high-cholesterol-ingestion, functioning as an

  2. Small Punch Tests at Oxide Scales Surface of Structural Steel and Low Silicon Steel

    Czech Academy of Sciences Publication Activity Database

    Hrabovský, J.; Dobeš, Ferdinand; Horský, J.

    2014-01-01

    Roč. 82, 3-4 (2014), s. 297-310 ISSN 0030-770X Institutional support: RVO:68081723 Keywords : Small punch * Oxide scales * X-ray diffraction * Mechanical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials Impact factor: 1.140, year: 2014

  3. Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurements

    DEFF Research Database (Denmark)

    Petersen, Christian Leth; Grey, Francois; Aono, M.

    1997-01-01

    We have investigated how the conductance of Si(100)-(2 x 1) and Si(111)-(7 x 7) surfaces change during exposure to molecular oxygen. A monotonic decrease in conductance is seen as the (100) surfaces oxidizes. In contract to a prior study, we propose that this change is caused by a decrease in sur...

  4. Bismuth-based electrochemical stripping analysis

    Science.gov (United States)

    Wang, Joseph

    2004-01-27

    Method and apparatus for trace metal detection and analysis using bismuth-coated electrodes and electrochemical stripping analysis. Both anodic stripping voltammetry and adsorptive stripping analysis may be employed.

  5. Electrical resistivity of fast neutron irradiated bismuth

    International Nuclear Information System (INIS)

    Quelard, G.

    1975-01-01

    The production and recovery of fast neutron radiation damage in bismuth, at 20K has been studied by means of electrical resistivity. Results are independent of crystallographic orientation and indicate a creation of carriers during irradiation [fr

  6. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    Directory of Open Access Journals (Sweden)

    Raja Sufi

    2011-01-01

    Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  7. Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation

    Science.gov (United States)

    Maeda, Susumu; Sudo, Haruo; Okamura, Hideyuki; Nakamura, Kozo; Sueoka, Koji; Izunome, Koji

    2018-04-01

    A new control technique for achieving compatibility between crystal quality and gettering ability for heavy metal impurities was demonstrated for a nitrogen-doped Czochralski silicon wafer with a diameter of 300 mm via ultra-high temperature rapid thermal oxidation (UHT-RTO) processing. We have found that the DZ-IG structure with surface denuded zone and the wafer bulk with dense oxygen precipitates were formed by the control of vacancies in UHT-RTO process at temperature exceeding 1300 °C. It was also confirmed that most of the void defects were annihilated from the sub-surface of the wafer due to the interstitial Si atoms that were generated at the SiO2/Si interface. These results indicated that vacancies corresponded to dominant species, despite numerous interstitial silicon injections. We have explained these prominent features by the degree of super-saturation for the interstitial silicon due to oxidation and the precise thermal properties of the vacancy and interstitial silicon.

  8. Crystallization of bismuth borate glasses

    International Nuclear Information System (INIS)

    Bajaj, Anu; Khanna, Atul

    2009-01-01

    Bismuth borate glasses with Bi 2 O 3 concentration of 20-66 mol% were prepared by melt quenching and devitrified by heat treatment above their glass transition temperatures. All glasses show a strong tendency towards crystallization on annealing that increases with Bi 2 O 3 concentration. The crystalline phases formed on devitrification were characterized by FTIR absorption spectroscopy and DSC measurements. Our studies reveal that phases produced in glasses are strongly determined by initial glass composition and the two most stable crystalline phases are: Bi 3 B 5 O 12 and Bi 4 B 2 O 9 . The metastable BiBO 3 phase can also be formed by devitrification of glass with 50 mol% of Bi 2 O 3 . This phase is, however, unstable and decomposes into Bi 3 B 5 O 12 and Bi 4 B 2 O 9 on prolonged heat treatment.

  9. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  10. High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

    Science.gov (United States)

    Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

    2008-11-01

    Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

  11. New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    Science.gov (United States)

    Te-Kuang Chiang,

    2010-07-01

    Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

  12. The influence of silicon as a possible reactive element in the protection against high temperature oxidation of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Otero, E.; Perez, F.J.; Hierro, M.P.; Gomez, C.; Pedraza, F.; Segovia, J. L. de; Roman, E.

    1998-01-01

    The influence of silicon incorporated into the alloy by means of ion implantation of 1 x 10''15 ions/cm''2 at 150 keV on the protective scale development based upon Cr 1 ,3 Fe 0 ,7O 3 and manganese-enriched spinels, Mn 1 ,5Cr 1 .5O 4 after oxidation of an austenitic AISI 304 stainless steel at 1.173 K and atmospheric pressure of air for 144 h has been studied. The presence of small quantities of silicon at the outermost layers of the alloy promotes transport of chromium during the early stages of oxidation. Further, ion implantation seems to play a beneficial role against decarburization of the alloy. (Author) 8 refs

  13. Effect of salinity and silicon application on oxidative damage of sorghum [sorghum bicolor (L.) moench.

    International Nuclear Information System (INIS)

    Kafi, M.; Nabati, J.; Masoumi, A.; Mehrgerdi, M.Z.

    2011-01-01

    Application of silicon (Si) to soil is considered as an alternative approach to alleviate salinity stress in crop plants. Therefore, a field experiment was conducted to investigate the effects of Si application [control (without Si), 1.44 and 1.92 g.kg /sup -1/ soil on membrane stability index (MSI), relative water content (RWC), leaf proline, soluble sugars, antioxidant activity, total phenols and dry matter accumulation of two sorghum (Sorghum bicolor) cultivars under three levels of salinity of irrigation water (5.2, 10.5 and 23.1 dS m/sup -1/ . The results showed that leaf proline content, activities of ascorbate peroxidase (APX) and glutathione reductase (GR), Na/sup +/ concentration significantly increased only at high level of salinity, while, RWC Si caused an and dry matter accumulation were significantly decreased at all salinity levels. Soil application of 1.44 g.kg/sup -1/ increase in the activities of APX, catalase (CAT), superoxide dismutase (SOD), peroxidase (PRO), glutathione reductase soil Si caused an increase in membrane stabilityindex, (GR), total antioxidant and total phenol contents and 1.92 g.kg/sup -1/ soluble sugar and total phenol contents, CAT, SOD and total antioxidant activity. Soluble sugars, total phenols, SOD and total antioxidant activity and dry matter accumulation in cv. Omidbakhsh were higher than those in cv. Sepideh. In conclusion, alleviation of salinity stress by exogenous application of Si was found to be associated partly with enhanced antioxidant activity. (author)

  14. Influence of Nano sized Silicon Oxide on the Luminescent Properties of Zn O Nanoparticles

    International Nuclear Information System (INIS)

    Shvalagin, V.; Grodziuk, G.; Kurmach, M.; Granchak, V.; Sarapulova, O.; Sherstiuk, V.

    2016-01-01

    For practical use of nano sized zinc oxide as the phosphor its luminescence quantum yields should be maximized. The aim of this work was to enhance luminescent properties of Zn O nanoparticles and obtain high-luminescent Zn O/SiO 2 composites using simpler approaches to colloidal synthesis. The luminescence intensity of zinc oxide nanoparticles was increased about 3 times by addition of silica nano crystals to the source solutions during the synthesis of Zn O nanoparticles. Then the quantum yield of luminescence of the obtained Zn O/SiO 2 composites is more than 30%. Such an impact of silica is suggested to be caused by the distribution of Zn O nano crystals on the surface of silica, which reduces the probability of separation of photo generated charges between the zinc oxide nanoparticles of different sizes, and as a consequence, there is a significant increase of the luminescence intensity of Zn O nanoparticles. This way of increasing nano-Zn O luminescence intensity facilitates its use in a variety of devices, including optical ultraviolet and visible screens, luminescent markers, antibacterial coatings, luminescent solar concentrators, luminescent inks for security printing, and food packaging with abilities of informing consumers about the quality and safety of the packaged product.

  15. Influence of Nanosized Silicon Oxide on the Luminescent Properties of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Vitaliy Shvalagin

    2016-01-01

    Full Text Available For practical use of nanosized zinc oxide as the phosphor its luminescence quantum yields should be maximized. The aim of this work was to enhance luminescent properties of ZnO nanoparticles and obtain high-luminescent ZnO/SiO2 composites using simpler approaches to colloidal synthesis. The luminescence intensity of zinc oxide nanoparticles was increased about 3 times by addition of silica nanocrystals to the source solutions during the synthesis of ZnO nanoparticles. Then the quantum yield of luminescence of the obtained ZnO/SiO2 composites is more than 30%. Such an impact of silica is suggested to be caused by the distribution of ZnO nanocrystals on the surface of silica, which reduces the probability of separation of photogenerated charges between the zinc oxide nanoparticles of different sizes, and as a consequence, there is a significant increase of the luminescence intensity of ZnO nanoparticles. This way of increasing nano-ZnO luminescence intensity facilitates its use in a variety of devices, including optical ultraviolet and visible screens, luminescent markers, antibacterial coatings, luminescent solar concentrators, luminescent inks for security printing, and food packaging with abilities of informing consumers about the quality and safety of the packaged product.

  16. Bismuth Silver Oxysulfide for Photoconversion Applications: Structural and Optoelectronic Properties

    KAUST Repository

    Baqais, Amal Ali Abdulallh

    2017-09-18

    Single-phase bismuth silver oxysulfide, BiAgOS, was prepared by a hydrothermal method. Its structural, morphological and optoelectronic properties were investigated and compared with bismuth copper oxysulfide (BiCuOS). Rietveld refinement of the powder X-ray diffraction (XRD) measurements revealed that the BiAgOS and BiCuOS crystals have the same structure as ZrSiCuAs: the tetragonal space group P4/nmm. X-ray photoelectron spectroscopy (XPS) analyses confirmed that the BiAgOS has a high purity, in contrast with BiCuOS, which tends to have Cu vacancies. The Ag has a monovalent oxidation state, whereas Cu is present in the oxidation states of +1 and +2 in the BiCuOS system. Combined with experimental measurements, density functional theory calculations employing the range-separated hybrid HSE06 exchange-correlation functional with spin-orbit coupling quantitatively elucidated photophysical properties such as ab-sorption coefficients, effective masses and dielectric constants. BiCuOS and BiAgOS were found to have indirect bandgaps of 1.1 and 1.5 eV, respectively. Both possess high dielectric constants and low electron and hole effective masses. Therefore, these materials are expected to have high exciton dissociation capabilities and excellent carrier diffusion properties. This study reveals that BiAgOS is a promising candidate for photoconversion applications.

  17. Gravimetric Analysis of Bismuth in Bismuth Subsalicylate Tablets: A Versatile Quantitative Experiment for Undergraduate Laboratories

    Science.gov (United States)

    Davis, Eric; Cheung, Ken; Pauls, Steve; Dick, Jonathan; Roth, Elijah; Zalewski, Nicole; Veldhuizen, Christopher; Coeler, Joel

    2015-01-01

    In this laboratory experiment, lower- and upper-division students dissolved bismuth subsalicylate tablets in acid and precipitated the resultant Bi[superscript 3+] in solution with sodium phosphate for a gravimetric determination of bismuth subsalicylate in the tablets. With a labeled concentration of 262 mg/tablet, the combined data from three…

  18. Determining the thickness of aliphatic alcohol monolayers covalently attached to silicon oxide surfaces using angle-resolved X-ray photoelectron spectroscopy

    Science.gov (United States)

    Lee, Austin W. H.; Kim, Dongho; Gates, Byron D.

    2018-04-01

    The thickness of alcohol based monolayers on silicon oxide surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS). Advantages of using alcohols as building blocks for the formation of monolayers include their widespread availability, ease of handling, and stability against side reactions. Recent progress in microwave assisted reactions demonstrated the ease of forming uniform monolayers with alcohol based reagents. The studies shown herein provide a detailed investigation of the thickness of monolayers prepared from a series of aliphatic alcohols of different chain lengths. Monolayers of 1-butanol, 1-hexanol, 1-octanol, 1-decanol, and 1-dodecanol were each successfully formed through microwave assisted reactions and characterized by ARXPS techniques. The thickness of these monolayers consistently increased by ∼1.0 Å for every additional methylene (CH2) within the hydrocarbon chain of the reagents. Tilt angles of the molecules covalently attached to silicon oxide surfaces were estimated to be ∼35° for each type of reagent. These results were consistent with the observations reported for thiol based or silane based monolayers on either gold or silicon oxide surfaces, respectively. The results of this study also suggest that the alcohol based monolayers are uniform at a molecular level.

  19. Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

    Science.gov (United States)

    Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

    2018-02-01

    The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

  20. Effect of time and of precursor molecule on the deposition of hydrophobic nanolayers on ethyelene tetrafluoroethylene–silicon oxide substrates

    Directory of Open Access Journals (Sweden)

    Gabriella Rossi

    2016-01-01

    Full Text Available Abstract A method was developed for generating transparent and hydrophobic nanolayers chemisorbed onto flexible substrates of ethylene tetrafluoroethylene–silicon oxide (ETFE–SiOx. In particular, the effect of the deposition time and of the precursor molecule on the nanocoating process was analyzed with the aim of pursuing an optimization of the above method in an industrial application perspective. It was found that precursor molecule of triethoxysilane allowed to obtain better hydrophobic properties on the SiOx surface in shorter times compared to trichlorosilane, reaching the 92 % of final contact angle (CA value of 106° after only 1 h of deposition. The optical properties and surface morphology were also assessed in function of time, revealing that an initial transparency reduction is followed by a subsequent transmittance increase during the self assembly of fluoroalkylsilanes on the SiOx surface, coherently with the surface roughness analysis data. Encouraging results were also obtained in terms of oleophobic properties improvement of the nanocoated surfaces.

  1. Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

    International Nuclear Information System (INIS)

    Larramendy, Florian; Paul, Oliver; Blatche, Marie Charline; Mazenq, Laurent; Laborde, Adrian; Temple-Boyer, Pierre

    2015-01-01

    We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

  2. The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. D. Espinosa-Torres

    2016-01-01

    Full Text Available Not long ago, we developed a theoretical model to describe a set of chemical reactions that can potentially occur during the process of obtaining Silicon Rich Oxide (SRO films, an off stoichiometry material, notwithstanding the technique used to grow such films. In order to elucidate the physical chemistry properties of such material, we suggested the chemical reactions that occur during the process of growing of SRO films in particular for the case of the Low Pressure Chemical Vapor Deposition (LPCVD technique in the aforementioned model. The present paper represents a step further with respect to the previous (published work, since it is dedicated to the calculation by Density Functional Theory (DFT of the optical and electronic properties of the as-grown and annealed SRO structures theoretically predicted on the basis of the previous work. In this work, we suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the DFT, the contribution that they may have to the phenomenon of luminescence (PL, which is experimentally measured in SRO films. We evaluated the optical and electronic properties of both the as-grown and the annealed structures.

  3. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  4. Luminescent passive-oxidized silicon quantum dots as biological staining labels and their cytotoxicity effects at high concentration

    International Nuclear Information System (INIS)

    Fujioka, Kouki; Manabe, Noriyoshi; Hanada, Sanshiro; Hoshino, Akiyoshi; Yamamoto, Kenji; Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji; Miyasaka, Ryosuke; Tilley, Richard D; Manome, Yoshinobu

    2008-01-01

    Semiconductor quantum dots (QDs) hold some advantages over conventional organic fluorescent dyes. Due to these advantages, they are becoming increasingly popular in the field of bioimaging. However, recent work suggests that cadmium based QDs affect cellular activity. As a substitute for cadmium based QDs, we have developed photoluminescent stable silicon quantum dots (Si-QDs) with a passive-oxidation technique. Si-QDs (size: 6.5 ± 1.5 nm) emit green light, and they have been used as biological labels for living cell imaging. In order to determine the minimum concentration for cytotoxicity, we investigated the response of HeLa cells. We have shown that the toxicity of Si-QDs was not observed at 112 μg ml -1 and that Si-QDs were less toxic than CdSe-QDs at high concentration in mitochondrial assays and with lactate dehydrogenase (LDH) assays. Especially under UV exposure, Si-QDs were more than ten times safer than CdSe-QDs. We suggest that one mechanism for the cytotoxicity is that Si-QDs can generate oxygen radicals and these radicals are associated with membrane damages. This work has demonstrated the suitability of Si-QDs for bioimaging in lower concentration, and their cytotoxicity and one toxicity mechanism at high concentration

  5. Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation.

    Science.gov (United States)

    Yao, Tingting; Chen, Ruotian; Li, Junjie; Han, Jingfeng; Qin, Wei; Wang, Hong; Shi, Jingying; Fan, Fengtao; Li, Can

    2016-10-07

    The photoanodes with heterojunction behavior could enable the development of solar energy conversion, but their performance largely suffers from the poor charge separation and transport process through the multiple interfacial energy levels involved. The question is how to efficiently manipulate these energy levels. Taking the n-Si Schottky photoanode as a prototype, the undesired donor-like interfacial defects and its adverse effects on charge transfer in n-Si/ITO photoanode are well recognized and diminished through the treatment on electronic energy level. The obtained n-Si/TiO x /ITO Schottky junction exhibits a highly efficient charge transport and a barrier height of 0.95 eV, which is close to the theoretical optimum for n-Si/ITO Schottky contact. Then, the holes extraction can be further facilitated through the variation of surface energy level, with the NiOOH coated ITO layer. This is confirmed by a 115% increase in surface photovoltage of the photoanodes. Eventually, an unprecedentedly low onset potential of 0.9 V (vs RHE) is realized for water oxidation among n-Si photoanodes. For the water oxidation reaction, the n-Si/TiO x /ITO/NiOOH photoanode presents a charge separation efficiency up to 100% and an injection efficiency greater than 90% at a wide voltage range. This work identifies the important role of interfacial energetics played in photoelectrochemical conversion.

  6. Formation and electrical characteristics of silicon dioxide layers by use of nitric acid oxidation method

    International Nuclear Information System (INIS)

    Imal, S.; Takahashi, M.; Matsuba, K.; Asuha; Ishikawa, Y.; Kobayashi, Hikaru

    2005-01-01

    SiO 2 /Si structure can be formed at low temperatures by use of nitric acid (HNO 3 ) oxidation of Si (NAOS) method. When Si wafers are immersed in ∼ 40 wt% HNO 3 solutions at 108 deg C, ∼ 1 nm SiO 2 layers are formed. The subsequent immersion in 68 wt% HNO 3 (i.e., azeotropic mixture of HNO 3 with water) at 121 deg C increases the SiO 2 thickness. The 3,5 nm-thick SiO 2 layers produced by this two-step NAOS method possess a considerably low leakage current density (e.g. 1 x 10 2 A/cmi 2 at the forward gate bias, V G , of 1.5 V), in spite of the low temperature oxidation, and further decreased (e.g., 8 x 10 4 A/cm 2 at V G = 1.5 V) by post-metallization annealing at 250 deg C in hydrogen atmosphere. In order to increase the SiO 2 thickness, a bias voltage is applied during the NAOS method. When 10 V is applied to Si with respect to a Pt counter electrode both immersed in 1 M HNO 3 solutions at 25 deg C, SiO 2 layers with 8 nm thickness can be formed for 1 h(Authors)

  7. Growth of aluminum oxide on silicon carbide with an atomically sharp interface

    DEFF Research Database (Denmark)

    Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

    2017-01-01

    The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulat......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...... this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...

  8. Bismuth alloy potting seals aluminum connector in cryogenic application

    Science.gov (United States)

    Flower, J. F.; Stafford, R. L.

    1966-01-01

    Bismuth alloy potting seals feedthrough electrical connector for instrumentation within a pressurized vessel filled with cryogenic liquids. The seal combines the transformation of high-bismuth content alloys with the thermal contraction of an external aluminum tube.

  9. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  10. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Science.gov (United States)

    Ciccarelli, C.; Park, B. G.; Ogawa, S.; Ferguson, A. J.; Wunderlich, J.

    2010-08-01

    We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device. We have identified two different regimes where we observe a large and gate-voltage dependent MR. We suggest two different mechanisms which can explain the observed high MR. Moreover, we have studied how the MR of the MOSFET scales with the dimensions of the channel for gate voltages below the threshold. We observed a decrease in the MR by two orders of magnitude by reducing the dimensions of the channel from 50×280 μm2 to 5×5 μm2.

  11. Liquid Bismuth Propellant Flow Sensor

    Science.gov (United States)

    Polzin, Kurt A.; Stanojev, B. J.; Korman, V.

    2007-01-01

    Quantifying the propellant mass flow rate in liquid bismuth-fed electric propulsion systems has two challenging facets. First, the flow sensors must be capable of providing a resolvable measurement at propellant mass flow rates on the order of 10 mg/see with and uncertainty of less that 5%. The second challenge has to do with the fact that the materials from which the flow sensors are fabricated must be capable of resisting any of the corrosive effects associated with the high-temperature propellant. The measurement itself is necessary in order to properly assess the performance (thrust efficiency, Isp) of thruster systems in the laboratory environment. The hotspot sensor[I] has been designed to provide the bismuth propellant mass flow rate measurement. In the hotspot sensor, a pulse of thermal energy (derived from a current pulse and associated joule heating) is applied near the inlet of the sensor. The flow is "tagged" with a thermal feature that is convected downstream by the flowing liquid metal. Downstream, a temperature measurement is performed to detect a "ripple" in the local temperature associated with the passing "hotspot" in the propellant. By measuring the time between the upstream generation and downstream detection of the thermal feature, the flow speed can be calculated using a "time of flight" analysis. In addition, the system can be calibrated by measuring the accumulated mass exiting the system as a-function of time and correlating this with the time it takes the hotspot to convect through the sensor. The primary advantage of this technique is that it doesn't depend on an absolute measurement of temperature but, instead, relies on the observation of thermal features. This makes the technique insensitive to other externally generated thermal fluctuations. In this paper, we describe experiments performed using the hotspot flow sensor aimed at quantifying the resolution of the sensor technology. Propellant is expelled onto an electronic scale to

  12. Studies on bismuth carboxylates—synthesis and characterization of ...

    Indian Academy of Sciences (India)

    1. Introduction. A large number of bismuth compounds are clinically active against Helicobacter pylori and other gastroin- testinal disorders.1–2 Prominent among these are bis- muth subsalicylate (trade name Pepto-Bismol), col- loidal bismuth subcitrate (CBS, trade name De-Nol) and ranitidine bismuth citrate (trade name ...

  13. Short report: evaluation of Helicobacter pylori eradication with bismuth sucralfate

    NARCIS (Netherlands)

    Reijers, M. H.; Noach, L. A.; Tytgat, G. N.

    1994-01-01

    In a pilot study we have evaluated the clinical efficacy of bismuth sucralfate to eradicate H. pylori. Ten consecutive patients with chronic dyspepsia and H. pylori associated gastritis were treated with bismuth sucralfate (220 mg bismuth per tablet, 4 tablets per day for 4 weeks). If a 14C urea

  14. 21 CFR 520.1204 - Kanamycin, bismuth subcarbonate, activated attapulgite.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Kanamycin, bismuth subcarbonate, activated... § 520.1204 Kanamycin, bismuth subcarbonate, activated attapulgite. (a) Specifications—(1) Each 5 milliliters (mL) of suspension contains 100 milligrams (mg) kanamycin (as the sulfate), 250 mg bismuth...

  15. Bismuth centred magnetic perovskite: A projected multiferroic

    International Nuclear Information System (INIS)

    Kundu, Asish K.; Seikh, Md. Motin; Nautiyal, Pranjal

    2015-01-01

    In recent time substantial attention has been initiated to understand the physics behind multiferroism and to design new multiferroic materials. BiMnO 3 and BiFeO 3 are the well-studied Bi-centred multiferroic oxides. BiMnO 3 is a ferromagnetic–ferroelectric (metastable) phase and require drastic conditions to synthesize. However, lanthanum substituted BiMnO 3 phases stabilized at ambient pressure. It is thus of major importance to increase the number of ferromagnetic perovskites with Bi cations that could be designed under ambient conditions. In this article, we have presented an up to date report of investigations on Bi-centred magnetic perovskites, a prospective material for multiferroic application. Central focus is concentrated on La 0.5 Bi 0.5 MnO 3 perovskite with various substitutions at different levels. A few of these perovskites are found to be of practical importance e.g. La 0.5 Bi 0.5 Mn 0.67 Co 0.33 O 3 with high dielectric permittivity coupled with ferromagnetism. A comprehensive analysis of different physical functionalities and their interrelation for a wide range of compositions of these Bi-centred perovskites is presented. It has been found that the complex magnetic behaviour originates from mixed valence metal ions. The ferroelectricity is associated with the 6s 2 lone pair of Bi 3+ cations. The magnetic ground state influences the dielectric properties reflecting the multiferroism in a single material. - Highlights: • Multiferroics have attracted increasing attention due to their possible device applications. • Bismuth centred magnetic perovskite is one kind of such promising multiferroic materials. • Ferromagnetic Bi-perovskites, which are synthesized at ambient conditions, have been discussed

  16. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films : Effects of environment and surface oxide thickness

    NARCIS (Netherlands)

    Alsem, D. H.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up

  17. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  18. Synthesis, characterization and catalytic evaluation of cubic ordered mesoporous iron-silicon oxides

    Energy Technology Data Exchange (ETDEWEB)

    Martins, T.S., E-mail: tsmartins@unifesp.br [Departamento de Ciencias Exatas e da Terra, Universidade Federal de Sao Paulo, Rua Prof. Artur Riedel 275, 09972-270 Diadema, Sao Paulo (Brazil); Mahmoud, A.; Cides da Silva, L.C. [Instituto de Quimica, Universidade de Sao Paulo, 05508-900 Sao Paulo (Brazil); Cosentino, I.C. [IPEN, Av. Prof. Lineu Prestes 2242, Cidade Universitaria, 05508-900 Sao Paulo (Brazil); Tabacniks, M.H. [Instituto de Fisica, Universidade de Sao Paulo 66318, 05315-970 Sao Paulo (Brazil); Matos, J.R. [Instituto de Quimica, Universidade de Sao Paulo, 05508-900 Sao Paulo (Brazil); Freire, R.S. [CEPEMA/USP, Centro de Capacitacao e Pesquisa em Meio Ambiente, Cubatao/SP (Brazil); Instituto de Quimica, Universidade de Sao Paulo, 05508-900 Sao Paulo (Brazil); Fantini, M.C.A. [Instituto de Fisica, Universidade de Sao Paulo 66318, 05315-970 Sao Paulo (Brazil)

    2010-11-01

    Iron was successfully incorporated in FDU-1 type cubic ordered mesoporous silica by a simple direct synthesis route. The (Fe/FDU-1) samples were characterized by Rutherford back-scattering spectrometry (RBS), small angle X-ray scattering (SAXS), N{sub 2} sorption isotherm, X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS). The resulting material presented an iron content of about 5%. Prepared at the usual acid pH of -0.3, the composite was mostly formed by amorphous silica and hematite with a quantity of Fe{sup 2+} present in the structure. The samples prepared with adjusted pH values (2 and 3.5) were amorphous. The samples' average pore diameter was around 12.0 nm and BET specific surface area was of 680 m{sup 2} g{sup -1}. Although the iron-incorporated material presented larger lattice parameter, about 25 nm compared to pure FDU-1, the Fe/FDU-1 composite still maintained its cubic ordered fcc mesoporous structure before and after the template removal at 540 deg. C. The catalytic performance of Fe/FDU-1 was investigated in the catalytic oxidation of Black Remazol B dye using a catalytic ozonation process. The results indicated that Fe/FDU-1 prepared at the usual acid pH exhibited high catalytic activity in the mineralization of this pollutant when compared to the pure FDU-1, Fe{sub 2}O{sub 3} and Fe/FDU-1 prepared with higher pH of 2 and 3.5.

  19. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  20. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  1. Sonochemical synthesis of bismuth(III) nano coordination compound and direct synthesis of Bi.sub.2./sub.O.sub.3./sub. nanoparticles from a bismuth(III) nano coordination compound precursor

    Czech Academy of Sciences Publication Activity Database

    Roodsari, M.S.; Shaabani, B.; Mirtamizdoust, B.; Dušek, Michal; Fejfarová, Karla

    2015-01-01

    Roč. 25, č. 5 (2015), s. 1226-1232 ISSN 1574-1443 Grant - others:AV ČR(CZ) Praemium Academiae Institutional support: RVO:68378271 Keywords : nano coordination compound * sonochemical method * intramolecular proton transfer * nano bismuth oxide * isoniazid Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.308, year: 2015

  2. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO{sub 2}/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-05-15

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  3. Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

    CERN Document Server

    Wang Yong; Chen Chang Yong; Diao Hong Wei; Zhang Shi Bin; Xu Yan Yue; Kong Guang Lin; Liao Xian Bo

    2002-01-01

    Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200 degree C. The effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600 degree C, which it increases with increasing annealing temperature from 600 to 900 degree C. The light-emission of the films are enhanced with increasing annealing temperature up to 500 degree C, while it is rapidly reduced when the annealing temperature exceeds 600 degree C. The peak position of the PL spectrum blue shifts by annealing at the temperature of 300 degree C, then it redshifts with further raising annealing temperature. The following hydrogen plasma treatment results i...

  4. Determination of trace amounts of lead and cadmium using a bismuth/glassy carbon composite electrode.

    Science.gov (United States)

    Hwang, Gil-Ho; Han, Won-Kyu; Hong, Seok-Jun; Park, Joon-Shik; Kang, Sung-Goon

    2009-02-15

    We examined the use of a bismuth-glassy carbon (Bi/C) composite electrode for the determination of trace amounts of lead and cadmium. Incorporated bismuth powder in the composite electrode was electrochemically dissolved in 0.1M acetate buffer (pH 4.5) where nanosized bismuth particles were deposited on the glassy carbon at the reduction potential. The anodic stripping voltammetry on the Bi/C composite electrode exhibited well-defined, sharp and undistorted peaks with a favorable resolution for lead and cadmium. Comparing a non-oxidized Bi/C composite electrode with an in-situ plated bismuth film electrode, the Bi/C composite electrode exhibited superior performance due to its much larger surface area. The limit of detection was 0.41 microg/L for lead and 0.49 microg/L for cadmium. Based on this study, we are able to conclude that various types of composite electrodes for electroanalytical applications can be developed with a prudent combination of electrode materials.

  5. Liquid Bismuth Feed System for Electric Propulsion

    Science.gov (United States)

    Markusic, T. E.; Polzin, K. A.; Stanojev, B. J.

    2006-01-01

    Operation of Hall thrusters with bismuth propellant has been shown to be a promising path toward high-power, high-performance, long-lifetime electric propulsion for spaceflight missions. For example, the VHITAL project aims td accurately, experimentally assess the performance characteristics of 10 kW-class bismuth-fed Hall thrusters - in order to validate earlier results and resuscitate a promising technology that has been relatively dormant for about two decades. A critical element of these tests will be the precise metering of propellant to the thruster, since performance cannot be accurately assessed without an accurate accounting of mass flow rate. Earlier work used a pre/post-test propellant weighing scheme that did not provide any real-time measurement of mass flow rate while the thruster was firing, and makes subsequent performance calculations difficult. The motivation of the present work was to develop a precision liquid bismuth Propellant Management System (PMS) that provides real-time propellant mass flow rate measurement and control, enabling accurate thruster performance measurements. Additionally, our approach emphasizes the development of new liquid metal flow control components and, hence, will establish a basis for the future development of components for application in spaceflight. The design of various critical components in a bismuth PMS are described - reservoir, electromagnetic pump, hotspot flow sensor, and automated control system. Particular emphasis is given to material selection and high-temperature sealing techniques. Open loop calibration test results are reported, which validate the systems capability to deliver bismuth at mass flow rates ranging from 10 to 100 mg/sec with an uncertainty of less than +/- 5%. Results of integrated vaporizer/liquid PMS tests demonstrate all of the necessary elements of a complete bismuth feed system for electric propulsion.

  6. Hyperfine splitting in lithium-like bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Lochmann, Matthias; Froemmgen, Nadja; Hammen, Michael; Will, Elisa [Universitaet Mainz (Germany); Andelkovic, Zoran; Kuehl, Thomas; Litvinov, Yuri; Winters, Danyal; Sanchez, Rodolfo [GSI Helmholtzzentrum, Darmstadt (Germany); Botermann, Benjamin; Noertershaeuser, Wilfried [Technische Universitaet Darmstadt (Germany); Bussmann, Michael [Helmholtzzentrum Dresden-Rossendorf (Germany); Dax, Andreas [CERN, Genf (Switzerland); Hannen, Volker; Joehren, Raphael; Vollbrecht, Jonas; Weinheimer, Christian [Universitaet Muenster (Germany); Geppert, Christopher [Universitaet Mainz (Germany); GSI Helmholtzzentrum, Darmstadt (Germany); Stoehlker, Thomas [GSI Helmholtzzentrum, Darmstadt (Germany); Universitaet Heidelberg (Germany); Thompson, Richard [Imperial College, London (United Kingdom); Volotka, Andrey [Technische Universitaet Dresden (Germany); Wen, Weiqiang [IMP Lanzhou (China)

    2013-07-01

    High-precision measurements of the hyperfine splitting values on Li- and H-like bismuth ions, combined with precise atomic structure calculations allow us to test QED-effects in the regime of the strongest magnetic fields that are available in the laboratory. Performing laser spectroscopy at the experimental storage ring (ESR) at GSI Darmstadt, we have now succeeded in measuring the hyperfine splitting in Li-like bismuth. Probing this transition has not been easy because of its extremely low fluorescence rate. Details about this challenging experiment will be given and the achieved experimental accuracy are presented.

  7. Bismuth salicylate for diarrhea in children

    Science.gov (United States)

    Goldman, Ran D.

    2013-01-01

    Abstract Question Recently, I had a visit from a 5-year-old patient who had been given bismuth subsalicylate for a diarrheal illness by a local family physician during a trip to South America. Is this a practice we should encourage? Answer Research from developing countries has found the use of bismuth subsalicylate to be effective in shortening the duration of diarrheal illness. Despite these findings, its limited effectiveness and concerns about it potentially causing Reye syndrome, compliance, and cost are the key reasons it is not routinely recommended for children. PMID:23946025

  8. Adsorbate-modified growth of ultrathin rare-earth oxide films on silicon and complementary studies of cerium oxide on ruthenium; Adsorbat-modifiziertes Wachstum ultraduenner Seltenerdoxid-Filme auf Silizium und komplementaere Studien von Ceroxid auf Ruthenium

    Energy Technology Data Exchange (ETDEWEB)

    Kaemena, Bjoern

    2013-11-27

    Rare-earth oxides (REOx) are extensively investigated due to their extraordinary physical and chemical properties, which essentially arise from the unfilled 4f electron shell, in order to reveal the nature of these exceptional properties and ultimately to utilize them for multiple technological applications. To maintain the exponential increase in integration density in CMOS technology, which is also known as Moore s law, there is a strong desire for ultrathin, well-ordered, epitaxial REOx layers with a precisely engineered interface, which is essential for reliable, ultrahigh-performance devices. So far this has been considerably impeded by RE-promoted silicon oxidation, leading to amorphous silicon oxide and RE silicon formation. By using complementary synchrotron radiation methods such as X-ray standing waves (XSW), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), structural and spectroscopic information are inferred simultaneously from ultrathin ceria and lanthana films grown on chlorine, silver and gallium passivated silicon(111). In general, it is revealed that the chemical and structural composition of the interface and the crystallinity of ultrathin REOx layers on silicon can be precisely controlled by adsorbate-mediated growth. This might represent a crucial step towards a perfectly engineered interface, eventually allowing for the integration of REOx as high-k gate oxides in microelectronics. In catalysis inverse model catalysts are studied with the aim of getting an in-depth understanding of the basic principles of catalysis. These model systems are employed to study, e. g., the nature of active sites and the reaction pathways in complex catalytic converters. However, a lot remains unknown about the chemical activity and selectivity as a function of the growth mechanism, structure and morphology of these model systems. The powerful spectroscopic photoemission and low-energy electron microscope, which is able to reveal the surface

  9. Bismuth Subgallate Toxicity in the Age of Online Supplement Use.

    Science.gov (United States)

    Sampognaro, Paul; Vo, Kathy T; Richie, Megan; Blanc, Paul D; Keenan, Kevin

    2017-11-01

    Bismuth salts have been used to treat gastroenterological disorders and are readily available over-the-counter and via the internet. Even though generally considered safe, bismuth compounds can cause a syndrome of subacute, progressive encephalopathy when taken in large quantities. We present the case of woman who developed progressive encephalopathy, aphasia, myoclonus, and gait instability after chronically ingesting large amounts of bismuth subgallate purchased from a major online marketing website to control symptoms of irritable bowel syndrome. After extensive neurological work-up, elevated bismuth levels in her blood, urine, and cerebrospinal fluid confirmed the diagnosis of bismuth-related neurotoxicity. She improved slowly following cessation of exposure. This case highlights bismuth subgallate as a neurotoxic bismuth formulation and reminds providers of the potential for safety misconceptions of positively reviewed online supplements.

  10. A scanning electron microscopy study of bismuth and phosphate phases in bismuth phosphate process waste at Hanford

    International Nuclear Information System (INIS)

    Reynolds, J.G.; Page, J.S.; Cooke, G.A.; John Pestovich

    2015-01-01

    This study characterizes major bismuth and phosphate-bearing phases in Hanford radioactive waste from the bismuth phosphate process using scanning electron microscopy with energy dispersive spectroscopy. Large bismuth phases displayed lath morphology and consisted of sodium, iron, bismuth, and phosphorus. The majority of the bismuth and phosphate observed was in small particulate (<2 µm in diameter) containing sodium, phosphorus, iron, and nickel. Additionally, phosphorus was included in a sodium-aluminum-phosphate lath-shaped species. Characterization of these waste types is of particular importance since they may have the bounding particle properties for designing waste mixing and transport processes used during treatment. (author)

  11. Influence of sintering parameters in the ferroelectric properties os strontium bismuth tantalate samples obtained by oxide mixture; Estudo da influencia dos parametros de sinterizacao nas propriedades ferroeletricas de amostras de tantalato de bismuto - estroncio obtidas por mistura de oxidos

    Energy Technology Data Exchange (ETDEWEB)

    Souza, R.R. de; Pereira, A.S.; Sousa, V.C., E-mail: ricson.souza@ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil); Egea, J.R.J. [Instituto de Ceramica y Vidrio (ICV/CSIC), Madrid (Spain)

    2012-07-01

    The family of compounds layered-type perovskite, know as Aurivilius presents great alternative not only by the absence of lead in the composition, but because the polarization retention, replacing PZT in FeRAM devices. The strontium bismuth tantalate (SrBi{sub 2}Ta{sub 2}O{sub 9}) or SBT is ferroelectric material that has attracted considerable interest, since it has high fatigue resistance, supporting high hysteresis loops, with the change in polarization.Checking polarization and depolarization currents stimulated by temperature it is possible to obtain, for example, information about the nature of charges and about the activation energy for the process of dielectric relaxation. For analysis of ferroelectric properties of this compound, it is essential to obtain specimens with a relative density around 95%. Thus, it is important the optimization of the sintering process in order to obtain a ceramic body with a high densification. The influence of sintering parameters to obtain SrBi{sub 2}Ta{sub 2}O{sub 9} in the polarization properties and in the microstructure of sintered samples was investigated by thermostimulated currents and electronic microscopy, respectively. Results show that variation of these parameters may cause changes in the ferroelectric properties of the material. (author)

  12. Single- and double energy N{sup +} ion irradiated planar optical waveguides in Er: Tungsten–tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Department of Crystal Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Zolnai, Z.; Fried, M.; Lohner, T. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S.; Righini, G.C. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Pelli, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2013-07-15

    Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er{sup 3+}-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N{sup +} ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N{sup +} ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.

  13. Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors

    Science.gov (United States)

    Ryan, J. T.; Lenahan, P. M.; Robertson, J.; Bersuker, G.

    2008-03-01

    We show that a Si /HfO2 interfacial layer defect with an electron spin resonance spectrum similar to that of some E' center variants responds to oxide bias consistent with an amphoteric defect. The spectrum is weakly orientation dependent indicating that the defect does not reside in a completely amorphous matrix. The defect's spin lattice relaxation time is much shorter than that of conventional E' centers suggesting that the defect involves some coupling of a Hf atom to a nearby oxygen deficient silicon dangling bond defect. This defect very likely plays an important role in widely reported instabilities in HfO2 based transistors.

  14. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  15. Magnetoreflection studies of ion implanted bismuth

    International Nuclear Information System (INIS)

    Nicolini, C.; Chieu, T.C.; Dresselhaus, M.S.; Massachusetts Inst. of Tech., Cambridge; Dresselhaus, G.

    1982-01-01

    The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite to those observed for Bi chemically doped with Sb. (author)

  16. On excitation of acoustic plasmons in bismuth

    International Nuclear Information System (INIS)

    Babkin, G.I.; Kravchenko, V.Ya.

    1977-01-01

    The amplitude of the transverse electromagnetic wave penetrating through a bismuth plate under conditions of existence of an acoustic plasma wave is calculated. Two wave coupling mechanisms due to the anisotropy of the carrier spectrum and the carrier drift in the magnetic field of the wave are considered. In the latter case, a wave of double frequency penetrates through the plate

  17. 21 CFR 73.2110 - Bismuth citrate.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Bismuth citrate. 73.2110 Section 73.2110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... paragraph (c)(1), effective April 27, 2010. For the convenience of the user, the revised text is set forth...

  18. Preparation and characterization of nanostructured copper bismuth ...

    Indian Academy of Sciences (India)

    Thin films of copper bismuth diselenide were prepared by chemical bath deposition technique onto glass substrate below 60°C. The deposition parameters such as time, temperature of deposition and pH of the solution, were optimized. The set of films having different elemental compositions was prepared by varying Cu/Bi ...

  19. Bismuth phosphates as intermediate temperature proton conductors

    DEFF Research Database (Denmark)

    Huang, Yunjie; Christensen, Erik; Shuai, Qin

    2017-01-01

    Proton conducting electrolyte materials operational in the intermediate temperature range of 200-400 °C are of special interest for applications in fuel cells and water electrolysers. Bismuth phosphates in forms of polycrystalline powders and amorphous glasses are synthesized and investigated...

  20. Photosensitive bismuth ions in lead tungstate

    Czech Academy of Sciences Publication Activity Database

    Vazhenin, V.A.; Potapov, A.P.; Asatryan, G.R.; Nikl, Martin

    2013-01-01

    Roč. 55, č. 4 (2013), s. 803-806 ISSN 1063-7834 Institutional support: RVO:68378271 Keywords : PbWO 4 * single crystal * bismuth * electron paramagnetic resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.782, year: 2013